Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

Energy Technology Data Exchange (ETDEWEB)

Chai, Bo, E-mail: willycb@163.com; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

2017-01-01

Highlights: • The phosphorus doped g-C{sub 3}N{sub 4} photocatalysts are synthesized by a co-pyrolysis procedure. • The crystal phase, morphology, and optical property of P doped g-C{sub 3}N{sub 4} are characterized. • The P doped g-C{sub 3}N{sub 4} photocatalysts show the improved photocatalytic activity. • The possible mechanism for enhanced photocatalytic activity is proposed. - Abstract: Phosphorus doped graphitic carbon nitride (g-C{sub 3}N{sub 4}) was easily synthesized using ammonium hexafluorophosphate (NH{sub 4}PF{sub 6}) as phosphorus source, and ammonium thiocyanate (NH{sub 4}SCN) as g-C{sub 3}N{sub 4} precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C{sub 3}N{sub 4} was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV–vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C{sub 3}N{sub 4} samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C{sub 3}N{sub 4} had a superior photocatalytic activity than that of pristine g-C{sub 3}N{sub 4}, attributing to the phosphorus atoms substituting carbon atoms of g-C{sub 3}N{sub 4} frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C{sub 3}N{sub 4}. Moreover, the tests of radical scavengers demonstrated that the holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) were the main active species for the

Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions

International Nuclear Information System (INIS)

Zhou, Yuhong; Zhang, Daoli; Zhang, Jianbing; Miao, Xiangshui; Ye, Cong

2014-01-01

In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices

Phosphorus doped TiO2 as oxygen sensor with low operating temperature and sensing mechanism

International Nuclear Information System (INIS)

Han, Zhizhong; Wang, Jiejie; Liao, Lan; Pan, Haibo; Shen, Shuifa; Chen, Jianzhong

2013-01-01

Nano-scale TiO 2 powders doped with phosphorus were prepared by sol–gel method. The characterization of the materials was performed by XRD, BET, FT-IR spectroscopy, Zeta potential measurement and XPS analysis. The results indicate that the phosphorus suppresses the crystal growth and phase transformation and, at the same time, increases the surface area and enhances the sensitivity and selectivity for the P-doped TiO 2 oxygen sensors. In this system, the operating temperature is low, only 116 °C, and the response time is short. The spectra of FT-IR and XPS show that the phosphorus dopant presents as the pentavalent-oxidation state in TiO 2 , further phosphorus can connect with Ti 4+ through the bond of Ti-O-P. The positive shifts of XPS peaks indicate that electron depleted layer of P-doped TiO 2 is narrowed compared with that of pure TiO 2 , and the results of Zeta potential illuminate that the density of surface charge carrier is intensified. The adsorptive active site and Lewis acid characteristics of the surface are reinforced by phosphorus doping, where phosphorus ions act as a new active site. Thus, the sensitivity of P-doped TiO 2 is improved, and the 5 mol% P-doped sample has the optimal oxygen sensing properties.

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

Science.gov (United States)

Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

2015-03-01

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

International Nuclear Information System (INIS)

Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

2007-01-01

The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

International Nuclear Information System (INIS)

Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

2014-01-01

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites

Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

International Nuclear Information System (INIS)

Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

2013-01-01

Graphical abstract: - Highlights: • P-doped g-C 3 N 4 has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C 3 N 4 . • A postannealing treatment further enhanced the activity of P-doped g-C 3 N 4 . • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C 3 N 4 , which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry

Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

Energy Technology Data Exchange (ETDEWEB)

Chen, Renyu; Trzynadlowski, Bart; Dunham, Scott T. [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)

2014-02-07

In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

International Nuclear Information System (INIS)

Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

2006-01-01

The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

International Nuclear Information System (INIS)

Parker, David; Singh, David J

2012-01-01

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

International Nuclear Information System (INIS)

Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

2009-01-01

Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

Science.gov (United States)

Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

2017-12-22

Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

Optimal process parameters for phosphorus spin-on-doping of germanium

Energy Technology Data Exchange (ETDEWEB)

Boldrini, Virginia [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Carturan, Sara Maria, E-mail: sara.carturan@lnl.infn.it [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Maggioni, Gianluigi; Napolitani, Enrico [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Napoli, Daniel Ricardo [INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Camattari, Riccardo [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122, Ferrara (Italy); De Salvador, Davide [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy)

2017-01-15

Highlights: • Optimized protocol for the application of phosphorus spin-on-doping to Ge surface. • Homogeneous n-type Ge layers, fully electrically active, are obtained. • Crucial parameters for SOD curing are relative humidity, time and temperature. • Characterization of Ge loss from the surface into the SOD film by diffusion. • Spike annealing in standard tube chamber furnace are performed. - Abstract: The fabrication of homogeneously doped germanium layers characterized by total electrical activation is currently a hot topic in many fields, such as microelectronics, photovoltaics, optics and radiation detectors. Phosphorus spin-on-doping technique has been implemented on Ge wafers, by developing a protocol for the curing process and subsequent diffusion annealing for optimal doping. Parameters such as relative humidity and curing time turned out to affect the surface morphology, the degree of reticulation reached by the dopant source and the amount of dopant available for diffusion. After spike annealing in a conventional furnace, diffusion profiles and electrical properties have been measured. Ge loss from the surface during high-temperature annealing, due to diffusion into the source film, has been observed and quantified.

Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

International Nuclear Information System (INIS)

Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

1987-01-01

Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

Science.gov (United States)

Sukpitak, Jessada; Sa-yakanit, Virulh

2015-12-01

The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

CERN Document Server

Lee, C J

1998-01-01

We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

First principles calculation of lithium-phosphorus co-doped diamond

Directory of Open Access Journals (Sweden)

Q.Y. Shao

2013-03-01

Full Text Available We calculate the density of states (DOS and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li and phosphorus (P by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The affection of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level and also may favorably regulate the diamond lattice distortion and expansion caused by the P atom.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

2008-03-21

We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Science.gov (United States)

Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

2017-12-01

We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

2006-01-01

Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements

Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

International Nuclear Information System (INIS)

Xu Jiaxiong; Yao Ruohe

2011-01-01

Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

KAUST Repository

Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

2009-01-01

We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

International Nuclear Information System (INIS)

Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2016-01-01

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

Science.gov (United States)

Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-05-01

Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Science.gov (United States)

Um, Jae Gwang; Jang, Jin

2018-04-01

We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

Institute of Scientific and Technical Information of China (English)

Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

2017-01-01

In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (～ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2％ is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

Einstein's photoemission emission from heavily-doped quantized structures

CERN Document Server

Ghatak, Kamakhya Prasad

2015-01-01

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Science.gov (United States)

Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

2018-01-01

The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-10

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-01

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

In situ phosphorus-doped polysilicon for excitation and detection in micromechanical resonators

NARCIS (Netherlands)

Bouwstra, S.; Bouwstra, Siebe; de Weerd, Eddy L; Elwenspoek, Michael Curt

Low-pressure chemical vapour deposited (LPCVD) in situ phosphorus-doped polysilicon films have been grown from a 60:30:300 sccm silane:phosphine (2000 ppm):nitrogen mass-flow mixture at 625°C under varied process conditions. Thickness uniformity, grain size, dopant concentration, resistivity,

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Directory of Open Access Journals (Sweden)

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

2006-01-01

Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

Science.gov (United States)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

NARCIS (Netherlands)

Feinäugle, Matthias

2008-01-01

The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

Science.gov (United States)

Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

2016-01-28

Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

International Nuclear Information System (INIS)

Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

2007-01-01

Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Kalish, R.; Uzan-Saguy, C.; Baskin, E.; Nesládek, M.; Koizumi, S.

2003-01-01

Roč. 199, č. 1 (2003), s. 82-86 ISSN 0031-8965 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z1010914 Keywords : photo-Hall measurements * CVD diamonnd * phosphorus doped Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.950, year: 2003

Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

International Nuclear Information System (INIS)

Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

2007-01-01

In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

Energy Technology Data Exchange (ETDEWEB)

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

2017-02-15

The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

Measurement of surface recombination velocity on heavily doped indium phosphide

International Nuclear Information System (INIS)

Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

1990-01-01

The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

Heavily-doped 2D-quantized structures and the Einstein relation

CERN Document Server

Ghatak, Kamakhya P

2015-01-01

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

Science.gov (United States)

Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

2017-06-01

Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

Science.gov (United States)

Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

2006-08-01

We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

Science.gov (United States)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

International Nuclear Information System (INIS)

Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

2017-01-01

The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

Science.gov (United States)

Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

2018-04-01

The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

Science.gov (United States)

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

International Nuclear Information System (INIS)

Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

1993-07-01

A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

Relevance of phosphorus incorporation and hydrogen removal for Si:P {delta}-doped layers fabricated using phosphine

Energy Technology Data Exchange (ETDEWEB)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y. [Centre for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052 (Australia)

2005-05-01

We present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P {delta}-doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities in these samples were determined from Hall effect measurements at 4 K sample temperature. An anneal to incorporate phosphorus atoms into substitutional lattice sites is critical to achieving full dopant activation after Si encapsulation by MBE. Whilst the presence of hydrogen can degrade the quality of the Si encapsulation layer, we show that it does not adversely impact the electrical activation of the phosphorus dopants. We discuss the relevance of our results to the fabrication of nano-scale Si:P devices. (copyright 2005 WILEY-VCH Verlag GmbH and C o. KGaA, Weinheim) (orig.)

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

KAUST Repository

Lin, S. S.

2009-11-11

We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

A highly efficient electrocatalyst for oxygen reduction reaction: phosphorus and nitrogen co-doped hierarchically ordered porous carbon derived from an iron-functionalized polymer

Science.gov (United States)

Deng, Chengwei; Zhong, Hexiang; Li, Xianfeng; Yao, Lan; Zhang, Huamin

2016-01-01

Heteroatom-doped carbon materials have shown respectable activity for the oxygen reduction reaction (ORR) in alkaline media. However, the performances of these materials are not satisfactory for energy conversion devices, such as fuel cells. Here, we demonstrate a new type of phosphorus and nitrogen co-doped hierarchically ordered porous carbon (PNHOPC) derived from an iron-functionalized mesoporous polymer through an evaporation-induced self-assembly process that simultaneously combines the carbonization and nitrogen doping processes. The soft template and the nitrogen doping process facilitate the formation of the hierarchically ordered structure for the PNHOPC. The catalyst possesses a large surface area (1118 cm2 g-1) and a pore volume of 1.14 cm3 g-1. Notably, it exhibits excellent ORR catalytic performance, superior stability and methanol tolerance in acidic electrolytes, thus making the catalyst promising for fuel cells. The correlations between the unique pore structure and the nitrogen and phosphorus configuration of the catalysts with high catalytic activity are thoroughly investigated.Heteroatom-doped carbon materials have shown respectable activity for the oxygen reduction reaction (ORR) in alkaline media. However, the performances of these materials are not satisfactory for energy conversion devices, such as fuel cells. Here, we demonstrate a new type of phosphorus and nitrogen co-doped hierarchically ordered porous carbon (PNHOPC) derived from an iron-functionalized mesoporous polymer through an evaporation-induced self-assembly process that simultaneously combines the carbonization and nitrogen doping processes. The soft template and the nitrogen doping process facilitate the formation of the hierarchically ordered structure for the PNHOPC. The catalyst possesses a large surface area (1118 cm2 g-1) and a pore volume of 1.14 cm3 g-1. Notably, it exhibits excellent ORR catalytic performance, superior stability and methanol tolerance in acidic

Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

Science.gov (United States)

Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

2012-08-01

The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

Science.gov (United States)

Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

2015-01-01

The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

2011-09-14

We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

International Nuclear Information System (INIS)

Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

2014-01-01

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-10-15

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

Energy Technology Data Exchange (ETDEWEB)

Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

2013-02-15

Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

International Nuclear Information System (INIS)

Seidel, Thomas E.; Goldberg, Alexander; Halls, Mat D.; Current, Michael I.

2016-01-01

Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si 9 H 12 truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF 3 , PCl 3 , and PBr 3 ) and disilane (Si 2 H 6 ). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF 3 and Si 2 H 6 reactions and featuring SiFH 3 as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactions for the deposition of four phosphorus atoms including lateral P–P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Directory of Open Access Journals (Sweden)

T. Ferrus

2012-06-01

Full Text Available We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

International Nuclear Information System (INIS)

Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

2006-01-01

Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

Potentiometric application of boron- and phosphorus-doped glassy carbon electrodes

Directory of Open Access Journals (Sweden)

ZORAN V. LAUSEVIC

2001-03-01

Full Text Available Acomparative study was carried out of the potentiometric application of boronand phosphorus-doped and undoped glassy carbon samples prepared at the same heat treatment temperature (HTT 1000°C. The electrochemical activities of the obtained electrode materials were investigated on the example of argentometric titrations. It was found that the electrochemical behaviour of the doped glassy carbon samples are very similar to a Sigri (undoped glassy carbon sample (HTT 2400°C. The experiments showed that the potentiometric response depends on the polarization mode, the nature of the sample, the pretreatment of the electrode surface, and the nature of the supporting electrolyte. The amounts of iodide, bromide, and of chloridewere determined to be 1.27 mg, 0.80 mg and 0.54 mg, respectively, with a maximum relative standard deviation of less than 1.1%. The obtained results are in good agreement with the results of comparative potentiometric titrations using a silver indicator electrode. The titrationmethod was applied to the indirect determination of pyridoxine hydrochloride, i.e., vitamin B6.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser

Directory of Open Access Journals (Sweden)

Tianxian Feng

2016-11-01

Full Text Available We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP nanosheets were prepared via a liquid exfoliation approach exploiting N-methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI, a piece of BP–PI film was obtained after evaporating the mixture in a petri dish. The BP–PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP–PI film can act as a promising nonlinear optical device for laser applications.

Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

Science.gov (United States)

Carns, Timothy Keith

With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Science.gov (United States)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

2013-01-01

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

Science.gov (United States)

Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

2006-02-01

We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

2015-01-19

REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

Science.gov (United States)

Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

2015-06-01

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

Unintended phosphorus doping of nickel nanoparticles during synthesis with TOP: a discovery through structural analysis.

Science.gov (United States)

Moreau, Liane M; Ha, Don-Hyung; Bealing, Clive R; Zhang, Haitao; Hennig, Richard G; Robinson, Richard D

2012-09-12

We report the discovery of unintentional phosphorus (P) doping when tri-n-octylphosphine (TOP) ligands are used in Ni nanoparticle synthesis, which is the most common method for monodisperse Ni nanoparticle synthesis. The nanoparticles appear pure face-centered cubic (fcc) Ni in X-ray diffraction despite the surprisingly high level (5 atomic %) of P. We find that the P doping follows a direct relationship with increased reaction time and temperature and that the P doping can be estimated with the degree of lattice expansion shown from a peak shift in the XRD spectrum. Through EXAFS modeling and density-functional (DFT) calculations of defect formation energies we find that the P atoms are preferentially located on the fcc lattice as substitutional dopants with oxidation state of zero. Magnetic and catalytic properties are shown to be greatly affected by this doping; DFT calculations show magnetization losses in the Ni system, as well as in Fe and Co systems. These findings are likely relevant for other metal syntheses that employ phosphine ligands.

Electrically-inactive phosphorus re-distribution during low temperature annealing

Science.gov (United States)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Pomelo peels-derived porous activated carbon microsheets dual-doped with nitrogen and phosphorus for high performance electrochemical capacitors

Science.gov (United States)

Wang, Zhen; Tan, Yongtao; Yang, Yunlong; Zhao, Xiaoning; Liu, Ying; Niu, Lengyuan; Tichnell, Brandon; Kong, Lingbin; Kang, Long; Liu, Zhen; Ran, Fen

2018-02-01

In this work, biomass pomelo peel is used to fabricate the porous activated carbon microsheets, and diammonium hydrogen phosphate (DHP) is employed to dual-dope carbon with nitrogen and phosphorus elements. With the benefit of DHP inducement and dual-doping of nitrogen and phosphorus, the prepared carbon material has a higher carbon yield, and exhibits higher specific surface area (about 807.7 m2/g), and larger pore volume (about 0.4378 cm3/g) with hierarchically structure of interconnected thin microsheets compared to the pristine carbon. The material exhibits not only high specific capacitance (240 F/g at 0.5 A/g), but also superior cycling performance (approximately 100% of capacitance retention after 10,000 cycles at 2 A/g) in 2 M KOH aqueous electrolyte. Furthermore, the assembled symmetric electrochemical capacitor in 1 M Na2SO4 aqueous electrolyte exhibits a high energy density of 11.7 Wh/kg at a power density of 160 W/kg.

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

International Nuclear Information System (INIS)

Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

1992-01-01

The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

2018-06-01

In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

Science.gov (United States)

Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

2015-05-07

Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

International Nuclear Information System (INIS)

Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

2015-01-01

REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

Science.gov (United States)

Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

2018-05-01

Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Energy Technology Data Exchange (ETDEWEB)

Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-01-13

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

International Nuclear Information System (INIS)

Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

2014-01-01

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

International Nuclear Information System (INIS)

Koinov, Z.G.; Yanchev, I.Y.

1981-09-01

The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

Effect of the defect-phosphorus atom complex interaction on the formation of the properties of neutron-doped silicon

International Nuclear Information System (INIS)

Kolesnik, L.I.; Lejferov, B.M.

1984-01-01

Radiation-induced defect annealing and changes in the concentration of substituting phosphorus atoms in silicon irradiated with different neutron doses have been studied by the low-temperature photoluminescence (PL) method at 4 K. Based on the PL spectrum character dependence on the fast-to-thermal neutron ration in a flux, series of lines and bands associated with the preferential formation of radiation-induced defects (within the 1.100 eV energy range) and with the presence of phosphorus impurity (1.15-1.12 eV) are identified. Some peculiarities are studied of the stage-by-stage annealing (250-500, 430-600, 600-800 deg C) of recombination-active centers (RAC) determining the radiation in the mentioned spectrum region. The relation between the RAC variations within the 1.12-1.15 eV range and the substituting phosphorus atom concentration in the 400-500 deg C temperature range is found. Activation energy of the substituting phosphorus atom concentration variation is estimated (approximately 0.5 eV). It is shown that the formation of defect-phosphorus complexes plays an important role in the formation of neutron-doped silicon properties, the presence of fast neutron in a flux being most importants

Phosphorus and Cu2+ removal by periphytic biofilm stimulated by upconversion phosphors doped with Pr3+-Li.

Science.gov (United States)

Zhu, Yan; Zhang, Jianhong; Zhu, Ningyuan; Tang, Jun; Liu, Junzhuo; Sun, Pengfei; Wu, Yonghong; Wong, Po Keung

2018-01-01

Upconversion phosphors (UCPs) can convert visible light into luminescence, such as UV, which can regulate the growth of microbes. Based on these fundamentals, the community composition of periphytic biofilms stimulated by UCPs doped with Pr 3+ -Li + was proposed to augment the removal of phosphorus (P) and copper (Cu). Results showed that the biofilms with community composition optimized by UCPs doped with Pr 3+ -Li + had high P and Cu 2+ removal rates. This was partly due to overall bacterial and algal abundance and biomass increases. The synergistic actions of algal, bacterial biomass and carbon metabolic capacity in the Pr-Li stimulated biofilms facilitated the removal of P and Cu 2+ . The results show that the stimulation of periphytic biofilms by lanthanide-doped UCPs is a promising approach for augmenting P and Cu 2+ removal. Copyright © 2017 Elsevier Ltd. All rights reserved.

Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

Directory of Open Access Journals (Sweden)

Chao Yan

2017-01-01

Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Effect of phosphorus incorporation on morphology and optical properties of ZnO nanorods

International Nuclear Information System (INIS)

Fan, Donghua; Zhang, Rong; Wang, Xianghu

2011-01-01

Graphical abstract: XPS spectra of the P-doped ZnO nanorods: (a) Zn 2p, (b) O 1s, and (c) P 2p spectra. The red curve in c is the Gauss-fitting curve. (d) Raman spectra of P-doped (curve 1) and pure (curve 2) ZnO nanorods. Research highlights: → P-doped ZnO nanorods have been prepared on Si substrates without any catalyst. → The introduction of phosphorus leads to the growth of tapered tip in the nanorods. → The formation of tapered tip is attributed to the relaxation of the lattice strain along the radial direction. → The strong ultraviolet peak is connected with the phosphorus acceptor-related emissions. -- Abstract: Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.

Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

International Nuclear Information System (INIS)

Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

2011-01-01

Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

Effect of phosphorus doping on electronic structure and photocatalytic performance of g-C{sub 3}N{sub 4}: Insights from hybrid density functional calculation

Energy Technology Data Exchange (ETDEWEB)

Liu, Jianjun, E-mail: jjliu@chnu.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China)

2016-07-05

Graphitic carbon nitride (g-C{sub 3}N{sub 4}), as a promising visible-light photocatalyst, has wide applications on water splitting, pollutants decomposition and CO{sub 2} reduction. Herein, we investigated the electronic and optical property of pure and P doped g-C{sub 3}N{sub 4} using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional method. The valuable features such as, the band structure, density of states, band decomposed charged density and optical absorption were computed to explore the role of phosphorus substitute N2 and C1 sites of g-C{sub 3}N{sub 4}.The results indicated that pure g-C{sub 3}N{sub 4} has an indirect band gap of about 2.73 eV, which is in good agreement with the experimental value. By doping P into N2 and C1 sites of g-C{sub 3}N{sub 4}, the band gap reduces to 2.03 and 2.22 eV, respectively. Optical absorption intensity of g-C{sub 3}N{sub 4} had a greatly enhancement in the visible region by doping P. Though narrowing the energy band of g-C{sub 3}N{sub 4} by doping P, conduction band and valance band edge of g-C{sub 3}N{sub 4} doping system still had enough potential to split water. Therefore, phosphorus doped g-C{sub 3}N{sub 4} is effective strategy to improve visible light response photocatalytic performance of g-C{sub 3}N{sub 4}. - Highlights: • For the first time, calculated band structure of P doped g-C{sub 3N}4 by Hybrid DFT method. • P doped g-C{sub 3N}4 narrowed band gap and enhanced optical absorption. • P doped g-C3{sub N4} enhanced the oxidation capacity of the valence band edge.

Spectroscopic studies of the origin of radiation-induced degradation in phosphorus-doped optical fibers and preforms

International Nuclear Information System (INIS)

Origlio, G.; Messina, F.; Cannas, M.; Girard, S.; Boukenter, A.; Ouerdane, Y.

2010-01-01

In this paper, we study the radiation-induced point defects related to the phosphorus element that is commonly used to improve the optical properties of silica-based glasses but is responsible of a dramatic increase in their radiation sensitivity. To this aim, the influence of x-ray irradiation on prototype phosphorus-doped canonical fibers and their related preforms was investigated by in situ radiation induced attenuation (RIA), optical absorption, and electron spin resonance (ESR) spectroscopy. The RIA spectra in the (1.5-5 eV) range, can be explained by the presence of at least three absorption bands induced by radiation exposure. Additionally the X-dose dependence of such bands was studied. The main responsible defect for these absorption peaks was the phosphorus oxygen hole center (POHC) center, whose presence was also detected by ESR measurements both in irradiated fibers and preforms, together with the lineshape of the so called P2 defect. Correlations between the RIA bands and the ESR results allow us to assign the 2.3 and 3.0 eV bands to POHCs and to propose a scheme for the simultaneous creation of POHC and P2 defects after x-ray exposure.

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

CERN Document Server

Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

2011-01-01

We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

2014-01-01

Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

Science.gov (United States)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

2018-07-01

Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

Science.gov (United States)

Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

1994-01-01

We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

International Nuclear Information System (INIS)

Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

2004-01-01

Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

Phosphorus doped and defects engineered graphene for improved electrochemical sensing: synergistic effect of dopants and defects

International Nuclear Information System (INIS)

Chu, Ke; Wang, Fan; Tian, Ye; Wei, Zhen

2017-01-01

Heteroatom-doped graphene materials emerged as promising metal-free catalysts have recently attracted a growing interest in electrochemical sensing applications. However, their catalytic activity and sensing performances still need to be further improved. Herein, we reported the development of unique phosphorus (P)-doped and plasma-etched graphene (denoted as PG-E) as an efficient metal-free electrocatalyst for dopamine (DA) sensing. It was demonstrated that introducing both P-dopants and plasma-engineered defects in graphene could synergistically improve the activity toward electrocatalytic oxidation of DA by increasing the accessible active sites and promoting the electron transport capability. The resulting PG-E modified electrode showed exceptional DA sensing performances with low detection limit, high selectivity and good stability. These results suggested that the synergistic effect of dopants and defects might be an important factor for developing the advanced graphene-based metal-free catalysts for electrochemical sensing.

Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

Science.gov (United States)

Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

2018-04-01

Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

Science.gov (United States)

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Transmutation doping of silicon solar cells

Science.gov (United States)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

Science.gov (United States)

Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-03-01

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

Influence of lead-doped hydroponic medium on the adsorption/bioaccumulation processes of lead and phosphorus in roots and leaves of the aquatic macrophyte Eicchornia crassipes.

Science.gov (United States)

Espinoza-Quiñones, Fernando R; Módenes, Aparecido Nivaldo; de Oliveira, Ana Paula; Trigueros, Daniela Estelita Goes

2013-11-30

In this study, lead bioaccumulation by the living free-floating aquatic macrophyte Eicchornia crassipes in different hydroponic conditions with variations in phosphorus and lead concentrations was investigated. A set of growth experiments in hydroponic media doped with lead and phosphorus within a wide concentration range was performed for 32 days in a greenhouse. All experiments were carried out with periodic replacement of all nutrients and lead. The concentration of lead and nutrients in biomass was determined by synchrotron radiation-excited total reflection X-ray fluorescence. By increasing the lead concentration in the medium, a reduction in biomass growth was observed, but a higher phosphorus retention in roots and leaves was shown at lower lead concentrations. In addition, an increase in the amount of bioaccumulated lead and phosphorus in roots was observed for higher lead and phosphorus concentrations in the medium, reaching saturation values of 4 mg Pb g(-1) and 7 mg P g(-1), respectively. Four non-structural kinetic models were tested, to represent the bioaccumulation of lead and phosphorus in roots. Pseudo-second order and irreversible kinetic models described the lead bioaccumulation data well, however, an irreversible kinetic model better fitted phosphorus uptake in roots. Copyright © 2013 Elsevier Ltd. All rights reserved.

Application of neutron activation to the characterization of silicon doping technological procedures

International Nuclear Information System (INIS)

Jourdain, Daniel.

1976-01-01

Neutron activation techniques (examples of reactions, emission spectra) are recalled. Autoradiography is studied in detail: a theoretical study of the phenomena involved and the parameters that have an effect on the resolution, is made. Concentration profiles of doping impurities are analyzed in the case of ion implantation and deep diffusion. Autoradiography was applied to the study of the following technological problems: phosphorus and gold deep diffusion, phosphorus and arsenic ion implantation, deposition and diffusion of phosphorus-doped oxides. Correlations between doping material concentration and electric parameters such as recovering time and surface resistance were looked for [fr

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

International Nuclear Information System (INIS)

Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

2010-01-01

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

2015-01-19

REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

Conductivity and superconductivity in heavily vacant diamond

Directory of Open Access Journals (Sweden)

S A Jafari

2009-08-01

Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

Doping of monocrystalline silicon with phosphorus by means of neutron irradiation at the IEA-R1 research reactor

International Nuclear Information System (INIS)

Carbonari, A.W.; Puget, M.A.C.

1990-11-01

The first neutron irradiation experiments with monocrystal silicon in the IEA-R1 research reactor of IPEN are related. The silicon is irradiated with phosphorus producing a N type semiconductor with a very small resistivity variation throughout the crystal volume. The neutrons induce nuclear reactions in Si-30 isotope and these atoms are then transformed in to phosphorous atoms. This process is known as Neutron Transmutation Doping. In order to irradiate the silicon crystals in the reactor, a specific device has been constructed, and it permits the irradiation of up to 2.5'' diameter monocrystals. (author)

Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

2018-03-05

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

Geochemical and hydrodynamic phosphorus retention mechanisms in lowland catchments

NARCIS (Netherlands)

van der Grift, B.

2017-01-01

The release of phosphorus (P) to surface water from heavily fertilised agricultural fields is of major importance for surface water quality. The research reported in this thesis examined the role of geochemical and hydrodynamic processes controlling P speciation and transport in lowland catchments

Electronic transport in heavily doped Ag/n-Si composite films

Directory of Open Access Journals (Sweden)

Clayton W. Bates Jr.

2013-10-01

Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

Phytoextraction of nitrogen and phosphorus by crops grown in a heavily manured Dark Brown Chernozem under contrasting soil moisture conditions.

Science.gov (United States)

Agomoh, Ikechukwu; Hao, Xiying; Zvomuya, Francis

2018-01-02

Phytoextraction of excess nutrients by crops in soils with a long history of manure application may be a viable option for reducing the nutrient levels. This greenhouse study examined the effectiveness of six growth cycles (40 d each) of barley, canola, corn, oat, pea, soybean, and triticale at extracting nitrogen (N) and phosphorus (P) from a Dark Brown Chernozem that had received 180 Mg ha -1 (wet wt.) of beef cattle feedlot manure annually for 38 years. Moisture content during the study was maintained at either 100% or 50% soil field capacity (SFC). Repeated cropping resulted in an overall decrease in dry matter yield (DMY). The decrease in N and P uptake relative to Cycle 1 was fastest for the cereal grains and less pronounced for the two legumes. However, cumulative N uptake values were significantly greater for corn than the other crops under both moisture regimes. The reduction in soil N was greater under the 100% than the 50% SFC. These results indicate that repeated cropping can be a useful management practice for reducing N and P levels in a heavily manured soil. The extent of reduction will be greater for crops with high biomass production under adequate moisture supply.

Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

International Nuclear Information System (INIS)

Norris, C.B.; Barnes, C.E.

1980-01-01

The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

Energy Technology Data Exchange (ETDEWEB)

Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

2003-05-15

We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

2 mm range ESR of the transmutation-produced phosphorus impurity in 6HSiC

International Nuclear Information System (INIS)

Kalabukhova, E.N.; Lukin, S.N.; Mokhov, E.N.

1993-01-01

Phosphorus impurity is introduced into 6HSiC monocrystals via neutron transmutation doping. Parameters of ESR two spectra referred to ESR spectra of separated phosphorus atoms in the lattice cubic and hexagonal position are detected and determined in the specimens at T=4.2 K. variation dynamics of ESR spectra of phosphorus and nitrogen within 4.2-73 K temperature range is studied. Ionization energies of phosphorus atoms are determined to be less, than those of nitrogen atoms, and ionization energy of phosphorus atoms in hexagonal position is higher, than that of phosphorus atoms in cubic position

Rapid enhancement of nodal quasiparticle mass with heavily underdoping in Bi2212

Science.gov (United States)

Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shin-ichi; Ino, Akihiro

2018-05-01

We report substantial advance of our low-energy angle-resolved photoemission study of nodal quasiparticles in Bi2Sr2CaCu2O8+δ. The new data cover the samples from underdoped down to heavily underdoped levels. We also present the nodal Fermi velocities that determined by using an excitation-photon energy of hν = 7.0 eV over a wide doping range. The consistency between the results with hν = 8.1 and 7.0 eV allows us to rule out the effect of photoemission matrix elements. In comparison with the data previously reported, the nodal effective mass increases by a factor of ∼ 1.5 in going from optimally doped to heavily underdoped levels. We find a rapid enhancement of the nodal quasiparticle mass at low doping levels near the superconductor-to-insulator transition. The effective coupling spectrum, λ (ω) , is extracted directly from the energy derivatives of the quasiparticle dispersion and scattering rate, as a causal function of the mass enhancement factor. A steplike increase in Reλ (ω) around ∼ 65 meV is demonstrated clearly by the Kramers-Kronig transform of Imλ (ω) . To extract the low-energy renormalization effect, we calculated a simple model for the electron-boson interaction. This model reveals that the contribution of the renormalization at | ω | ≤ 15 meV to the quasiparticle mass is larger than that around 65 meV in underdoped samples.

Surface photovoltage in heavily doped GaN:Si,Zn

Science.gov (United States)

McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

2014-02-01

In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

One-pot and ultrafast synthesis of nitrogen and phosphorus co-doped carbon dots possessing bright dual wavelength fluorescence emission

Science.gov (United States)

Sun, Xiangcheng; Brückner, Christian; Lei, Yu

2015-10-01

Very brief microwave heating of aniline, ethylene diamine, and phosphoric acid in water at ambient pressure generated nitrogen and phosphorus co-doped carbon dots (N,P-CDs) that exhibit bright dual blue (centred at 450 nm; 51% quantum yield) and green (centred at 510 nm, 38% quantum yield) fluorescence emission bands. The N,P-CDs were characterized using TEM, XRD, XPS, IR, UV-vis, and fluorescence spectroscopy, demonstrating their partially crystalline carbon, partially amorphous structures, and the incorporation of O, N, and P into the carbogenic scaffold. The N,P-CDs demonstrated excitation-dependent and nearly pH-independent emission properties. The unique dual emission properties lay the foundation for the use of N,P-CDs in ratiometric sensing applications.Very brief microwave heating of aniline, ethylene diamine, and phosphoric acid in water at ambient pressure generated nitrogen and phosphorus co-doped carbon dots (N,P-CDs) that exhibit bright dual blue (centred at 450 nm; 51% quantum yield) and green (centred at 510 nm, 38% quantum yield) fluorescence emission bands. The N,P-CDs were characterized using TEM, XRD, XPS, IR, UV-vis, and fluorescence spectroscopy, demonstrating their partially crystalline carbon, partially amorphous structures, and the incorporation of O, N, and P into the carbogenic scaffold. The N,P-CDs demonstrated excitation-dependent and nearly pH-independent emission properties. The unique dual emission properties lay the foundation for the use of N,P-CDs in ratiometric sensing applications. Electronic supplementary information (ESI) available: Detailed experimental section, XRD, FTIR, explosive sensing and the applications results. See DOI: 10.1039/c5nr05549k

Submicrosecond Q-Switching Er-Doped All-Fiber Ring Laser Based on Black Phosphorus

Directory of Open Access Journals (Sweden)

Yao Cai

2017-01-01

Full Text Available Black phosphorus (BP, a new two-dimensional (2D material, has been deeply developed for extensive applications in electronics and optoelectronics due to its similar physical structure to graphene and thickness dependent direct band gap. Here, we demonstrated a submicrosecond passive Q-switching Er-doped fiber laser with BP as saturable absorber (SA. The BP saturable absorber was fabricated by mechanical exfoliation method. By taking full advantage of the ultrafast relaxation time of BP-SA and careful design of compact ring cavity, we obtained stable Q-switching pulses output with a shortest duration as narrow as 742 ns. With increasing the pump power, the pulse repetition rate accreted gradually almost linearly from 9.78 to 61.25 kHz, and the pulse duration declined rapidly at lower pump power regime and retained approximate stationary at higher pump power regime from 3.05 to 0.742 μs. The experimental results indicate that BP-SA can be an effective SA for nanosecond Q-switching pulse generation.

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

OpenAIRE

Steyer, Michael; Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara

2015-01-01

The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter,...

Nitrogen-Doped Carbon for Red Phosphorous Based Anode Materials for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Jiaoyang Li

2018-01-01

Full Text Available Serving as conductive matrix and stress buffer, the carbon matrix plays a pivotal role in enabling red phosphorus to be a promising anode material for high capacity lithium ion batteries and sodium ion batteries. In this paper, nitrogen-doping is proved to effective enhance the interface interaction between carbon and red phosphorus. In detail, the adsorption energy between phosphorus atoms and oxygen-containing functional groups on the carbon is significantly reduced by nitrogen doping, as verified by X-ray photoelectron spectroscopy. The adsorption mechanisms are further revealed on the basis of DFT (the first density functional theory calculations. The RPNC (red phosphorus/nitrogen-doped carbon composite material shows higher cycling stability and higher capacity than that of RPC (red phosphorus/carbon composite anode. After 100 cycles, the RPNC still keeps discharge capacity of 1453 mAh g−1 at the current density of 300 mA g−1 (the discharge capacity of RPC after 100 cycles is 1348 mAh g−1. Even at 1200 mA g−1, the RPNC composite still delivers a capacity of 1178 mAh g−1. This work provides insight information about the interface interactions between composite materials, as well as new technology develops high performance phosphorus based anode materials.

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

Energy Technology Data Exchange (ETDEWEB)

Achatz, Philipp

2009-05-15

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

International Nuclear Information System (INIS)

Achatz, Philipp

2009-01-01

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

International Nuclear Information System (INIS)

Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

2005-01-01

Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

Electron transport in heavily doped GdN

Science.gov (United States)

Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

2018-01-01

We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

International Nuclear Information System (INIS)

Jerome, D.

1965-10-01

The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Doping profile measurement on textured silicon surface

Science.gov (United States)

Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

2018-04-01

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

Influence of the growth-surface on the incorporation of phosphorus in SiC

International Nuclear Information System (INIS)

Rauls, E.; Gerstmann, U.; Frauenheim, Th.

2005-01-01

Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

International Nuclear Information System (INIS)

Zaghdoudi, M.; Rogel, R.; Alzaied, N.; Fathallah, M.; Mohammed-Brahim, T.

2008-01-01

The paper deals with the effect of slightly phosphorus atoms introduced during deposition of polysilicon films. Polysilicon films are used as an active layer in thin film transistors (TFTs) fabricated on glass substrates at a maximum temperature of 600 deg. C.Three phosphorus atoms contents, determined by the value of the phosphine to silane ratio: Γ (3.7 x 10 -7 , 8 x 10 -7 , 26 x 10 -6 ), are used to optimize the active layer quality. The in-situ doped layers induce a better stability of the electrical characteristics, a higher mobility and lower value of the threshold voltage for the slightly doped active layers [M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim and F. Le-Bihan Control of the weak phosphorus doping in polysilicon, Materials Science and Forum, Vols. 480-481 (2005) pp.305.]. The present work shows that the effect of slightly phosphorus content improves the quality of oxide/polysilicon interface and decreases the defects density. Degradation of electrical properties is shown to originate from the creation of defect at the channel-interface oxide and in the grain boundaries. The effect of temperature change on the electrical properties was studied and the behaviour was also analyzed

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Neutron transmutation doping of polycrystalline silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1976-04-01

Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

Controlled doping by self-assembled dendrimer-like macromolecules

Science.gov (United States)

Wu, Haigang; Guan, Bin; Sun, Yingri; Zhu, Yiping; Dan, Yaping

2017-02-01

Doping via self-assembled macromolecules might offer a solution for developing single atom electronics by precisely placing individual dopants at arbitrary location to meet the requirement for circuit design. Here we synthesize dendrimer-like polyglycerol macromolecules with each carrying one phosphorus atom in the core. The macromolecules are immobilized by the coupling reagent onto silicon surfaces that are pre-modified with a monolayer of undecylenic acid. Nuclear magnetic resonance (NMR) and X-ray photoelectron spectroscopy (XPS) are employed to characterize the synthesized macromolecules and the modified silicon surfaces, respectively. After rapid thermal annealing, the phosphorus atoms carried by the macromolecules diffuse into the silicon substrate, forming dopants at a concentration of 1017 cm-3. Low-temperature Hall effect measurements reveal that the ionization process is rather complicated. Unlike the widely reported simple ionization of phosphorus dopants, nitrogen and carbon are also involved in the electronic activities in the monolayer doped silicon.

Tuning electronic properties of In2O3 nanowires by doping control

International Nuclear Information System (INIS)

Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

2004-01-01

We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

Black phosphorus saturable absorber for ultrashort pulse generation

Energy Technology Data Exchange (ETDEWEB)

Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

2015-08-03

Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

Spectroscopic XPEEM of highly conductive SI-doped GaN wires

Energy Technology Data Exchange (ETDEWEB)

Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

2015-12-15

Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

2015-03-10

We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

Science.gov (United States)

Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

2015-01-01

We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Science.gov (United States)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Water activated doping and transport in multilayered germanane crystals

International Nuclear Information System (INIS)

Young, Justin R; Johnston-Halperin, Ezekiel; Chitara, Basant; Cultrara, Nicholas D; Arguilla, Maxx Q; Jiang, Shishi; Fan, Fan; Goldberger, Joshua E

2016-01-01

The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues. (paper)

Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

Science.gov (United States)

Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

2017-08-01

This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

Scaling Relations for Adsorption Energies on Doped Molybdenum Phosphide Surfaces

International Nuclear Information System (INIS)

Fields, Meredith; Tsai, Charlie; Chen, Leanne D.; Abild-Pedersen, Frank; Nørskov, Jens K.; Chan, Karen

2017-01-01

Molybdenum phosphide (MoP), a well-documented catalyst for applications ranging from hydrotreating reactions to electrochemical hydrogen evolution, has yet to be mapped from a more fundamental perspective, particularly in the context of transition-metal scaling relations. In this work, we use periodic density functional theory to extend linear scaling arguments to doped MoP surfaces and understand the behavior of the phosphorus active site. The derived linear relationships for hydrogenated C, N, and O species on a variety of doped surfaces suggest that phosphorus experiences a shift in preferred bond order depending on the degree of hydrogen substitution on the adsorbate molecule. This shift in phosphorus hybridization, dependent on the bond order of the adsorbate to the surface, can result in selective bond weakening or strengthening of chemically similar species. As a result, we discuss how this behavior deviates from transition-metal, sulfide, carbide, and nitride scaling relations, and we discuss potential applications in the context of electrochemical reduction reactions.

Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires

DEFF Research Database (Denmark)

Markussen, Troels; Rurali, R.; Jauho, Antti-Pekka

2007-01-01

We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires...

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

International Nuclear Information System (INIS)

Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-01-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

Energy Technology Data Exchange (ETDEWEB)

Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

2014-05-01

Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

Nonlocal plasmonic response of doped and optically pumped graphene, MoS2, and black phosphorus

Science.gov (United States)

Petersen, René; Pedersen, Thomas Garm; Javier García de Abajo, F.

2017-11-01

Plasmons in two-dimensional (2D) materials have emerged as a new source of physical phenomena and optoelectronic applications due in part to the relatively small number of charge carriers on which they are supported. Unlike conventional plasmonic materials, they possess a large Fermi wavelength, which can be comparable with the plasmon wavelength, thus leading to unusually strong nonlocal effects. Here, we study the optical response of a selection of 2D crystal layers (graphene, MoS2, and black phosphorus) with inclusion of nonlocal and thermal effects. We extensively analyze their plasmon dispersion relations and focus on the Purcell factor for the decay of an optical emitter in close proximity to the material as a way to probe nonlocal and thermal effects, with emphasis placed on the interplay between temperature and doping. The results are based on tight-binding modeling of the electronic structure combined with the random-phase approximation response function in which the temperature enters through the Fermi-Dirac electronic occupation distribution. Our study provides a route map for the exploration and exploitation of the ultrafast optical response of 2D materials.

Effects of phosphorus-doping on energy band-gap, structural, surface, and photocatalytic characteristics of emulsion-based sol-gel derived TiO{sub 2} nano-powder

Energy Technology Data Exchange (ETDEWEB)

Ganesh, Ibram, E-mail: ibramganesh@arci.res.in

2017-08-31

Highlights: • Reported a novel route to synthesize high specific surface area P-doped TiO{sub 2} nano-powder photocatalysts. • Established methylene blue dye-sensitization mechanism of TiO{sub 2} photocatalyst. • Established the effects of methylene blue adsorption on the surface, structural and photocatalytic activity of P-doped TiO{sub 2}. • Established true quantum efficiency determination method for TiO{sub 2} photocatalysis. - Abstract: Different amounts of phosphorus (P)-doped TiO{sub 2} (PDT) nano-powders (P = 0–10 wt.%) were synthesized by following a new emulsion-based sol-gel (EBSG) route and calcined at 400 °C–800 °C for 6 h. These calcined PDT powders were then thoroughly characterized by means of XRD, XPS, SEM, FT-IR, FT-Raman, DRS, BET surface area, zeta-potential, cyclic-voltammetry and photocatalytic evaluation using methylene blue (MB) as a model-pollutant and established the effects of phosphorous doping on structural, surface, band-gap energy, and photocatalytic characteristics of TiO{sub 2} nano-powder formed in EBSG route. The characterization results suggest that the EBSG derived TiO{sub 2} nano-powder after calcination at 400 °C for 6 h is in the form of anatase phase when it was doped with <8 wt.% P, and it is in the amorphous state when doped with >8 wt.% P. Furthermore, these EBSG derived PDT powders own high negative zeta-potentials, high specific surface areas (up to >250 m{sup 2}/g), and suitable band-gap energies (<3.34 eV). Surprisingly, these PDT powders exhibit very high MB adsorption (up to 50%) from its aqueous 0.01 mM, 0.02 mM and 0.03 mM solutions during 30 min stirring in the dark, whereas, the commercial Degussa P-25 TiO{sub 2} nano-powder shows no adsorption. Among various photocatalysts investigated in this study, the 1 wt.% P-doped TiO{sub 2} nano-powder formed in EBSG route exhibited the highest photocatalytic activity for MB degradation reaction.

Combined equilibrium and non-equilibrium phosphorus segregation to grain boundaries in a 2.25Cr1Mo steel

International Nuclear Information System (INIS)

Song, S.-H.; Shen, D.-D.; Yuan, Z.-X.; Liu, J.; Xu, T.-D.; Weng, L.-Q.

2003-01-01

Grain boundary segregation of phosphorus in a P-doped 2.25Cr1Mo steel during ageing at 540 deg. C after quenching from 980 deg. C is examined by Auger electron spectroscopy. The segregation is a combined effect of equilibrium segregation and non-equilibrium segregation. The effect of phosphorus non-equilibrium segregation is to enhance the kinetics of its equilibrium segregation

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

International Nuclear Information System (INIS)

Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

2015-01-01

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

2014-08-01

Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

International Nuclear Information System (INIS)

Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

2014-01-01

Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

Boron-doped nanodiamonds as possible agents for local hyperthermia

Science.gov (United States)

Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

2017-04-01

In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

International Nuclear Information System (INIS)

Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

2006-01-01

The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Doping effect in Si nanocrystals

Science.gov (United States)

Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

2018-06-01

Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

Science.gov (United States)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

Electrical property studies of neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1978-01-01

Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

Electrical properties of phosphorene systems doped with fourth-period elements

Science.gov (United States)

Wang, Ke; Wang, Hai; Zhang, Min; Liu, Yan; Zhao, Wei

2018-05-01

In this work, we use a first-principles calculation to investigate the structure, binding energies, and electrical properties of monolayer phosphorene systems doped with fourth-period main group elements at a doping concentration of 6.25%. The calculation results reveal that, although large deformations exist, all doped systems are stable and non-spin polarized. In addition, the Ca, Se, and Br atoms are electron acceptors in the doped systems, whereas the Ga, Ge and As atoms are donors. Thus, there is an ionic bonding character between the dopants and neighboring phosphorus atoms in the Ca-, Ga-, Ge-, As-, Se-, and Br-doped systems. From band structures, we find that the K-, Ga-, As-, and Br-doped systems present semiconducting states with indirect gaps, whereas the Ca-, Ge-, and Se-doped systems have metallic states. We conclude that the metallicity of a phosphorene system doped with main-group elements depends on the number of valence electrons of the dopant. This investigation provides directions for manipulating the electrical properties of phosphorene by substitutional doping, which would broaden its possible applications in optoelectronics.

Black phosphorus: broadband nonlinear optical absorption and application

Science.gov (United States)

Li, Ying; He, Yanliang; Cai, Yao; Chen, Shuqing; Liu, Jun; Chen, Yu; Yuanjiang, Xiang

2018-02-01

Black phosphorus (BP), 2D layered material with layered dependent direct bandgap (0.3 eV (bulk), 2.0 eV (single layer)) that has gained renewed attention, has been demonstrated as an extremely appropriate optical material for broadband optical applications from infrared to mid-infrared wavebands. Herein, by coupling multi-layer BP films with microfiber, we fabricated a nonlinear optical device with long light-matter interaction distance and enhanced damage threshold. Through taking full advantage of its fine nonlinear optical absorption property, we obtained stable mode-locking (51 ps) and Q-switched mode-locking states in Yb-doped or Er-doped (403.7 fs) all-fiber lasers and the single-longitudinal-mode operation (53 kHz) in an Er-doped fiber laser with enhanced power tolerance, using the same nonlinear optical device. Our results showed that BP could be a favorable nonlinear optical material for developing BP-enabled wave-guiding photonic devices, and revealed new insight into BP for high optical power unexplored optical devices.

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

International Nuclear Information System (INIS)

DelAlamo, J.A.

1989-01-01

A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber

International Nuclear Information System (INIS)

Guang-Hong, Wang; Xiao-Dan, Zhang; Sheng-Zhi, Xu; Xin-Xia, Zheng; Chang-Chun, Wei; Jian, Sun; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μc-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance. (cross-disciplinary physics and related areas of science and technology)

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

Science.gov (United States)

Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

2018-03-01

The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

Study of the recrystallization mechanisms of ultra-high purity iron doped with carbon, manganese and phosphorus; Etude des mecanismes de recristallisation dans le fer de ultra-haute purete dope en carbone, manganese et phosphore

Energy Technology Data Exchange (ETDEWEB)

Lesne, L.

2000-07-04

High purity steels have the potential to improve deep drawing properties for automotive applications. Understanding the influence of the chemical composition on the recrystallization mechanisms and on texture development should help to improve their properties. We have studied the influence of 10 ppm of carbon, 1000 ppm of manganese and 120 ppm of phosphorus on the recrystallization mechanisms of ultra-high purity iron (UHP iron > 99.997%). For this purpose we used 4 materials: one undoped (UHP), one doped with C, one doped with C, Mn and one doped With C, Mn, P. In order to restrict grain coarsening in the hot strips, hot rolling was performed in the ferritic region, in one pass of 80% thickness reduction. The hot bands were then fully recrystallized but exhibited non-isotropic textures, with in particular an intense Goss [110]<001> component for the doped materials. The hot-bands were subsequently cold rolled down to a thickness of 0.8 mm corresponding to a thickness reduction of 80%, and then continuously annealed at 10 deg. C/s. The recrystallization kinetics are delayed with the addition of doping elements. In particular, the incubation time for nucleation is shifted towards higher temperatures while the recrystallization velocity increases. The textures of the fully recrystallized materials exhibit a strong Goss component prejudicial for deep drawing properties. We have established that this component can only appear if coarse grains and carbon in solid solution were simultaneously present in the material before deformation. Characterisation of the cold deformed state enabled us to evaluate the energy stored during deformation as a function of the material composition and the grain orientation: - the overall stored energy increases with the doping elements content. - the stored energy in the {gamma} fibre grains is greater than in the {alpha} fibre grains: 30 J/mol for the {gamma} fibre instead of 5 J/mol for the {alpha} fibre, in the undoped UHP iron. In the

Phosphorus, and nitrogen co-doped carbon dots as a fluorescent probe for real-time measurement of reactive oxygen and nitrogen species inside macrophages.

Science.gov (United States)

Gong, Yunqian; Yu, Bin; Yang, Wen; Zhang, Xiaoling

2016-05-15

Phosphorus and nitrogen doped carbon dots (PN-CDs) were conveniently prepared by carbonization of adenosine-5'-triphosphate using a hydrothermal treatment. The PN-CDs with P/C atomic ratio of ca. 9.2/100 emit blue luminescence with high quantum yields of up to 23.5%. The PN-CDs were used as a novel sensing platform for live cell imaging of reactive oxygen species (ROS) and reactive nitrogen species (RNS), including ClO(-), ONOO(-), and NO in macrophages. The nanosensor design is based on our new finding that the strong fluorescence of the PN-CDs can be sensitively and selectively quenched by ROS and RNS both in vitro and in vivo. These results reveal that the PN-CDs can serve as a sensitive sensor for rapid imaging of ROS and RNS signaling with high selectivity and contrast. Copyright © 2016 Elsevier B.V. All rights reserved.

Phosphorus-defect interactions during thermal annealing of ion implanted silicon

Science.gov (United States)

Keys, Patrick Henry

Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

International Nuclear Information System (INIS)

Servidori, M.; Zini, Q.; Dal Monte, C.

1983-01-01

The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

Ion-beam doping of amorphous silicon with germanium isovalent impurity

International Nuclear Information System (INIS)

Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

1988-01-01

Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

Strongly anisotropic RKKY interaction in monolayer black phosphorus

Science.gov (United States)

Zare, Moslem; Parhizgar, Fariborz; Asgari, Reza

2018-06-01

We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in two-dimensional black phosphorus, phosphorene. The RKKY interaction enhances significantly for the low levels of hole doping owing to the nearly valence flat band. Remarkably, for the hole-doped phosphorene, the highest RKKY interaction occurs when two impurities located along the zigzag direction and it tends to a minimum value with changing the direction from the zigzag to the armchair direction. We show that the interaction is highly anisotropic and the magnetic ground-state of two magnetic adatoms can be tuned by changing the rotational configuration of impurities. Owing to the anisotropic band dispersion, the oscillatory behavior with respect to the angle of the rotation and the distance of two magnetic impurities, R is well-described by sin (2kF R) , where the Fermi wavelength kF changes in different directions. We also find that the tail of the RKKY oscillations falls off as 1 /R2 at large distances.

Different annealing temperature suitable for different Mg doped P-GaN

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

An “on-off-on” fluorescent nanoprobe for recognition of chromium(VI) and ascorbic acid based on phosphorus/nitrogen dual-doped carbon quantum dot

Energy Technology Data Exchange (ETDEWEB)

Gong, Xiaojuan, E-mail: gxj1124@sxu.edu.cn [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China); Liu, Yang; Yang, Zhenhua; Shuang, Shaomin [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China); Zhang, Zeyu [Faculty of Science, Beijing University of Chemical Technology, Beijing, 100029 (China); Dong, Chuan, E-mail: dc@sxu.edu.cn [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China)

2017-05-22

Chromium (VI) [Cr(VI)] is a harsh environmental contaminates and has been proved to be highly toxic, carcinogenic and mutagenic. Therefore, developing an inexpensive, good selective and highly sensitive nanoprobe for the detection of Cr(VI) is in urgent demand. Recently, the highly fluorescent carbon quantum dots (CQDs) have been successfully utilized as efficient fluorescent nanoprobes for the detection of ions, pH and molecular substances. In this work, an “on-off” fluorescence phosphorus/nitrogen dual-doped CQDs (PNCQDs) probe was developed for the determination of Cr(VI) based on inner filter effect (IFE). The proposed PNCQDs nanoprobe shows its distinct merits of simplicity, convenience, fast implementation, good selectivity and high sensitivity towards Cr(VI), allowing its potential application in the determination of Cr(VI) in environment and biosystem. In addition, the chelation effect of the functional groups in reductant and Cr(VI), and the easy-conversion of Cr(VI) to reduced states (i.e. Cr(III) and Cr(0)) by reductants makes the minimization of IFE with a concomitant recovery of PNCQDs fluorescence possible. Hence, the PNCQDs/Cr(VI) hybrid was used as an “off-on” fluorescence probe for sensing ascorbic acid (AA), which is a model reductant. For the detection of Cr(VI), the linear range and the limit of detection achieved were 1.5–30 μmol/L and 23 nmol/L, respectively. For the detection of AA, the linear range and the limit of detection obtained were 5.0–200 μmol/L and 1.35 μmol/L, respectively. The as-constructed “on-off-on” PNCQDs fluorescent nanoprobe was successfully applied for detecting Cr(VI) and AA in biosystem. Furthermore, the as-constructed fluorescent sensing system was successfully applied to the analyses of AA in fresh fruits and in commercial fruit juices with satisfactory results. - Highlights: • Fast synthesis of phosphorus/nitrogen dual-doped CQDs (PNCQDs) by acid-base neutralization carbonization method. �

Predicting phosphorus concentrations in British rivers resulting from the introduction of improved phosphorus removal from sewage effluent

International Nuclear Information System (INIS)

Bowes, Michael J.; Neal, Colin; Jarvie, Helen P.; Smith, Jim T.; Davies, Helen N.

2010-01-01

Phosphorus (P) concentration and flow data gathered during the 1990s for a range of British rivers were used to determine the relative contributions of point and diffuse inputs to the total P load, using the Load Apportionment Model (LAM). Heavily urbanised catchments were dominated by sewage inputs, but the majority of the study catchments received most of their annual phosphorus load from diffuse sources. Despite this, almost 80% of the study sites were dominated by point source inputs for the majority of the year, particularly during summer periods when eutrophication risk is greatest. This highlights the need to reduce sewage P inputs to improve the ecological status of British rivers. These modelled source apportionment estimates were validated against land-use data and boron load (a chemical marker for sewage). The LAM was applied to river flow data in subsequent years, to give predicted P concentrations (assuming no change in P source inputs), and these estimates were compared with observed concentration data. This showed that there had been significant reductions in P concentration in the River Thames, Aire and Ouse in the period 1999 to 2002, which were attributable to the introduction of P stripping at sewage treatment works (STW). The model was then used to forecast P concentrations resulting from the introduction of P removal at STW to a 2 or 1 mg l -1 consent limit. For the urbanised rivers in this study, the introduction of phosphorus stripping to a 1 mg l -1 consent level at all STW in the catchment would not reduce P concentrations in the rivers to potentially limiting concentrations. Therefore, further sewage P stripping will be required to comply with the Water Framework Directive. Diffuse P inputs may also need to be reduced before some of the highly nutrient-enriched rivers achieve good ecological status.

[Effects of phosphorus sources on phosphorus fractions in rhizosphere soil of wild barley genotypes with high phosphorus utilization efficiency].

Science.gov (United States)

Cai, Qiu-Yan; Zhang, Xi-Zhou; Li, Ting-Xuan; Chen, Guang-Deng

2014-11-01

High P-efficiency (IS-22-30, IS-22-25) and low P-efficiency (IS-07-07) wild barley cultivars were chosen to evaluate characteristics of phosphorus uptake and utilization, and properties of phosphorus fractions in rhizosphere and non-rhizosphere in a pot experiment with 0 (CK) and 30 mg P · kg(-1) supplied as only Pi (KH2PO4), only Po (phytate) or Pi + Po (KH2PO4+ phytate). The results showed that dry matter and phosphorus accumulation of wild barley in the different treatments was ranked as Pi > Pi + Po > Po > CK. In addition, dry matter yield and phosphorus uptake of wild barley with high P-efficiency exhibited significantly greater than that with low P-efficiency. The concentration of soil available phosphorus was significantly different after application of different phosphorus sources, which was presented as Pi > Pi + Po > Po. The concentration of soil available phosphorus in high P-efficiency wild barley was significantly higher than that of low P-efficiency in the rhizosphere soil. There was a deficit in rhizosphere available phosphorus of high P-efficiency wild barley, especially in Pi and Pi+Po treatments. The inorganic phosphorus fractions increased with the increasing Pi treatment, and the concentrations of inorganic phosphorus fractions in soil were sorted as follows: Ca10-P > O-P > Fe-P > Al-P > Ca2-P > Ca8-P. The contents of Ca2-P and Ca8-P for high P-efficiency wild barley showed deficits in rhizosphere soil under each phosphorus source treatment. In addition, enrichment of Al-P and Fe-P was observed in Pi treatment in rhizosphere soil. The concentrations of organic phosphorus fractions in soil were sorted as follows: moderate labile organic phosphorus > moderate resistant, resistant organic phosphorus > labile organic phosphorus. The labile and moderate labile organic phosphorus enriched in rhizosphere soil and the greatest enrichment appeared in Pi treatment. Furthermore, the concentrations of moderate resistant organic phosphorus and resistant

Preparation of phosphorus targets using the compound phosphorus nitride

International Nuclear Information System (INIS)

Maier-Komor, P.

1987-01-01

Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

CERN Document Server

Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

2004-01-01

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

Excimer laser doping technique for application in an integrated CdTe imaging device

CERN Document Server

Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

1999-01-01

CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry

Science.gov (United States)

Ryder, Christopher R.; Wood, Joshua D.; Wells, Spencer A.; Yang, Yang; Jariwala, Deep; Marks, Tobin J.; Schatz, George C.; Hersam, Mark C.

2016-06-01

Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical and electronic properties. Exfoliated black phosphorus (BP)—a layered two-dimensional semiconductor—exhibits favourable charge-carrier mobility, tunable bandgap and highly anisotropic properties, but it is chemically reactive and degrades rapidly in ambient conditions. Here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated BP even after three weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent and alters the electronic properties of exfoliated BP, ultimately yielding a strong, tunable p-type doping that simultaneously improves the field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated BP, and thus improves its prospects for nanoelectronic applications.

Challenges and threats to implementing the fight against doping in sport.

Science.gov (United States)

Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

2014-05-01

Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

Energy Technology Data Exchange (ETDEWEB)

Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

2015-10-30

Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

Sustainable Phosphorus Measures: Strategies and Technologies for Achieving Phosphorus Security

Directory of Open Access Journals (Sweden)

Stuart White

2013-01-01

Full Text Available Phosphorus underpins the world’s food systems by ensuring soil fertility, maximising crop yields, supporting farmer livelihoods and ultimately food security. Yet increasing concerns around long-term availability and accessibility of the world’s main source of phosphorus—phosphate rock, means there is a need to investigate sustainable measures to buffer the world’s food systems against the long and short-term impacts of global phosphorus scarcity. While the timeline of phosphorus scarcity is contested, there is consensus that more efficient use and recycling of phosphorus is required. While the agricultural sector will be crucial in achieving this, sustainable phosphorus measures in sectors upstream and downstream of agriculture from mine to fork will also need to be addressed. This paper presents a comprehensive classification of all potential phosphorus supply- and demand-side measures to meet long-term phosphorus needs for food production. Examples range from increasing efficiency in the agricultural and mining sector, to technologies for recovering phosphorus from urine and food waste. Such measures are often undertaken in isolation from one another rather than linked in an integrated strategy. This integrated approach will enable scientists and policy-makers to take a systematic approach when identifying potential sustainable phosphorus measures. If a systematic approach is not taken, there is a risk of inappropriate investment in research and implementation of technologies and that will not ultimately ensure sufficient access to phosphorus to produce food in the future. The paper concludes by introducing a framework to assess and compare sustainable phosphorus measures and to determine the least cost options in a given context.

Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

Science.gov (United States)

Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

2014-02-01

Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

Energy Technology Data Exchange (ETDEWEB)

Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

2014-02-15

Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

Preparation of highly dispersed palladium–phosphorus nanoparticles and its electrocatalytic performance for formic acid electrooxidation

International Nuclear Information System (INIS)

Sun Hanjun; Xu Jiangfeng; Fu Gengtao; Mao Xinbiao; Zhang, Lu; Chen Yu; Zhou Yiming; Lu Tianhong; Tang Yawen

2012-01-01

Highly dispersed and ultrafine palladium–phosphorus (Pd–P) nanoparticles (NPs) are prepared with a novel phosphorus reduction method. The structural and electronic properties of Pd–P NPs are characterized using Fourier transform infrared (FT-IR), energy dispersive spectrometer (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The electrooxidation of formic acid on Pd–P NPs are investigated by using cyclic voltammetry, chronoamperometry and CO-stripping measurements. The physical characterizations indicate the doped P element can enhance the content of Pd 0 species in Pd NPs, decrease the particle size and improve the dispersion of Pd–P NPs. The electrochemical measurements show the Pd–P NPs have a better catalytic performance for formic acid electrooxidation than Pd NPs.

Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

International Nuclear Information System (INIS)

Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

2014-01-01

We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure

Science.gov (United States)

Dai, Zhongwei; Jin, Wencan; Yu, Jie-Xiang; Grady, Maxwell; Sadowski, Jerzy T.; Kim, Young Duck; Hone, James; Dadap, Jerry I.; Zang, Jiadong; Osgood, Richard M.; Pohl, Karsten

2017-12-01

The surface structure of black phosphorus materials is determined using surface-sensitive dynamical microspot low energy electron diffraction (μ LEED ) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (i) crystalline cleaved black phosphorus (BP) at 300 K and (ii) exfoliated few-layer phosphorene (FLP) of about 10 nm thickness which were annealed at 573 K in vacuum were studied. In both samples, a significant surface buckling of 0.22 Å and 0.30 Å, respectively, is measured, which is one order of magnitude larger than previously reported. As direct evidence for large buckling, we observe a set of (for the flat surface forbidden) diffraction spots. Using first-principles calculations, we find that the presence of surface vacancies is responsible for the surface buckling in both BP and FLP, and is related to the intrinsic hole doping of phosphoresce materials previously reported.

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Sui Yan-Ping; Yu Guang-Hui

2011-01-01

We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

International Nuclear Information System (INIS)

Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

2008-01-01

The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

Energy Technology Data Exchange (ETDEWEB)

Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P [Synchrotron Soleil, L' Orme des Merisiers, BP 48, 91192 Gif sur Yvette (France); Brunet, F [Laboratoire de Geologie, CNRS-ENS-UMR8538, 24 rue Lhommond, 75005 Paris (France); Irifune, T [Geodynamics Research Center, Ehime University, Matsuyama 790-8577 (Japan)

2009-11-15

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO{sub 4} groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO{sub 6} groups). This new coordination was achieved in AlPO{sub 4} doped SiO{sub 2} stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100{mu}m diameter) were embedded in the back-transformation products of high pressure form of AlPO{sub 4} matrix. They were identified by elemental mapping ({mu}-XRF). {mu}-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

Science.gov (United States)

Flank, A.-M.; Trcera, N.; Brunet, F.; Itié, J.-P.; Irifune, T.; Lagarde, P.

2009-11-01

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO6 groups). This new coordination was achieved in AlPO4 doped SiO2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

International Nuclear Information System (INIS)

Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P; Brunet, F; Irifune, T

2009-01-01

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO 4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO 6 groups). This new coordination was achieved in AlPO 4 doped SiO 2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO 4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Estimation of the algal-available phosphorus pool in sediments of a large, shallow eutrophic lake (Taihu, China) using profiled SMT fractional analysis

International Nuclear Information System (INIS)

Zhu Mengyuan; Zhu Guangwei; Li Wei; Zhang Yunlin; Zhao Linlin; Gu Zhao

2013-01-01

Because large, shallow lakes are heavily influenced by wind–wave disturbance, it is difficult to estimate internal phosphorus load using traditional methods. To estimate the potential contribution of phosphorus from sediment to overlying water in eutrophic Lake Taihu, phosphorus fractions of surface and deep layer sediments were quantified and analyzed for algal bloom potential using a Standard Measurements and Testing (SMT) sequential extraction method and incubation experiments. Phosphorus bound to Fe, Al and Mn oxides and hydroxides (Fe–P) and organic phosphorus (OP) were to be found bioactive. The difference in Fe–P and OP contents between surface and deep layers equates to the sediment pool of potentially algal-available phosphorus. This pool was estimated at 5168 tons for the entire lake and was closely related to pollution input and algal blooms. Profiled SMT fractionation analysis is thus a potentially useful tool for estimating internal phosphorus loading in large, shallow lakes. - Highlights: ► We used profiled sediment P activity by SMT fractionation to evaluate the P release potential in large and shallow lakes. ► We built the relationship between sediment SMT fractionations of P and the P release by algal bloom degradation process. ► We discussed the supporting mechanism of sediment P release to Microcystis algal bloom in a large and shallow lake. ► We discussed the nutrient control strategy of algal bloom in shallow lakes in highly human activities disturbance catchment. - Profiled SMT fractional analysis of internal phosphorus pool in large, shallow lake.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

2016-01-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David

2016-09-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

Science.gov (United States)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

Substoichiometric extraction of phosphorus

International Nuclear Information System (INIS)

Shigematsu, T.; Kudo, K.

1981-01-01

A study of the substoichiometric extraction of phosphorus is described. Phosphorus was extracted in the form of ternary compounds such as ammonium phosphomolybdate, 8-hydroxyquinolinium phosphomolybdate, tetraphenylarsonium phosphomolybdate and tri-n-octylamine phosphomolybdate. Consequently, phosphorus was extracted substoichiometrically by the addition of a substoichiometric amount of molybdenum for the four phosphomolybdate compounds. On the other hand, phosphorus could be separated substoichiometrically with a substoichiometric amount of tetraphenylarsonium chloride or tri-n-octylamine. Stoichiometric ratios of these ternary compounds obtained substoichiometrically were 1:12:3 for phosphorus, molybdenum and organic reagent. The applicability of these compounds to phosphorus determination is also discussed. (author)

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

Science.gov (United States)

Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

2017-12-12

We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

Use of Phosphorus Isotopes for Improving Phosphorus Management in Agricultural Systems

International Nuclear Information System (INIS)

2016-10-01

Phosphorus is an essential element in plant, human and animal nutrition. Soils with low levels of phosphorus are widespread in many regions of the world, and the deficiency limits plant growth and reduces crop production and food quality. This publication provides comprehensive and up to date information on several topics related to phosphorus in soil–plant systems, in agricultural systems and in the environment. It presents the theoretical background as well as practical information on how to use nuclear and radioisotope tracer techniques in both laboratory and greenhouse experiments to assess soil phosphorus forms and plant-available soil phosphorus pools, and to understand the cycling processes in soil–plant systems. The publication focuses on practical applications of radiotracer techniques and can serve as resource material for research projects on improving sustainable phosphorus management in agricultural systems and as practical guidance on the use of phosphate isotopes in soil–plant research

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

phosphorus sorption capacity as a guide for phosphorus availability

African Journals Online (AJOL)

Prof. Adipala Ekwamu

drained, light yellowish brown, loamy sand ... Dongola 2 Akked series: Deep, dark grayish brown, clay ... energy. Statistical analysis. Data collected were statistically analysed using ANOVA of MStatc ... phosphorus sorbed versus phosphorus.

A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon

Science.gov (United States)

Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru

1989-01-01

We have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of thermal donors (TD's) currently studied so far. Our results have shown that both families of thermal donors exhibit qualitatively the same kinetic behavior. Namely, as the annealing time increases, their ionization energy of levels continuously decrease with their densities increasing until the maxima and then become constant with their densities decreasing. However, there are significantly quantitative differences between the both families; NTD's have shallower levels, considerably smaller generation rates, and higher thermal stability than TD's. Sufficiently prolonged annealing for more than 105 min around 450 °C or short donor-killing annealing for 20 min at 650 °C completely annihilates TD's, leaving only NTD's, of which the most stable and therefore most shallow species have been suggested by our Hall measurements to have donor levels at 0.04 and 0.09 eV below the conduction-band edge. The density of interstitial oxygen still continues to decrease even after prolonged annealing for more than 105 min, where NTD's are present in a stable condition in a concentration of 1×1015 cm-3. NTD's may correlate with the NL10 electron paramagnetic resonance center because of similarities in their generation kinetics. We have suggested a hypothesis that NTD's have similar defect structures as TD's and that an unknown nucleus involved in the core of NTD's plays an essential role in lowering their ionization energy of levels and generation rates and also in stabilizing their donor activity.

Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

Directory of Open Access Journals (Sweden)

Wenchang Yeh

2017-01-01

Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Science.gov (United States)

Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

2018-04-01

GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

Hydrogen in oxygen-free, phosphorus-doped copper-Charging techniques, hydrogen contents and modelling of hydrogen diffusion and depth profile

International Nuclear Information System (INIS)

Martinsson, Aasa; Sandstroem, Rolf; Lilja, Christina

2013-01-01

In Sweden spent nuclear fuel is planned to be disposed of by encapsulating in cast iron inserts protected by a copper shell. The copper can be exposed to hydrogen released during corrosion processes in the inserts. If the hydrogen is taken up by the copper, it could lead to hydrogen embrittlement. Specimens from oxygen-free copper have been hydrogen charged using two different methods. The purpose was to investigate how hydrogen could be introduced into copper in a controlled way. The thermal charging method resulted in a reduction of the initial hydrogen content. After electrochemical charging of cylindrical specimens, the measured hydrogen content was 2.6 wt. ppm which should compared with 0.6 wt. ppm before charging. The retained hydrogen after two weeks was reduced by nearly 40%. Recently the paper 'Hydrogen depth profile in phosphorus-doped, oxygen-free copper after cathodic charging' (Martinsson and Sandstrom, 2012) has been published. The paper describes experimental results for bulk specimens as well as presenting a model. Almost all the hydrogen is found to be located less than 100 μm from the surface. This model is used to interpret the experimental results on foils in the present report. Since the model is fully based on fundamental equations, it can be used to analyse what happens in new situations. In this report the effect of the charging intensity, the grain size, the critical nucleus size for hydrogen bubble formation as well as the charging time are analysed

Hydrogen in oxygen-free, phosphorus-doped copper - Charging techniques, hydrogen contents and modelling of hydrogen diffusion and depth profile

Energy Technology Data Exchange (ETDEWEB)

Martinsson, Aasa [Swerea KIMAB, Kista (Sweden); Sandstroem, Rolf [Swerea KIMAB, Kista (Sweden); Div. of Materials Science and Engineering, KTH Royal Institute of Technology, Stockholm (Sweden); Lilja, Christina [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden)

2013-01-15

In Sweden spent nuclear fuel is planned to be disposed of by encapsulating in cast iron inserts protected by a copper shell. The copper can be exposed to hydrogen released during corrosion processes in the inserts. If the hydrogen is taken up by the copper, it could lead to hydrogen embrittlement. Specimens from oxygen-free copper have been hydrogen charged using two different methods. The purpose was to investigate how hydrogen could be introduced into copper in a controlled way. The thermal charging method resulted in a reduction of the initial hydrogen content. After electrochemical charging of cylindrical specimens, the measured hydrogen content was 2.6 wt. ppm which should compared with 0.6 wt. ppm before charging. The retained hydrogen after two weeks was reduced by nearly 40%. Recently the paper 'Hydrogen depth profile in phosphorus-doped, oxygen-free copper after cathodic charging' (Martinsson and Sandstrom, 2012) has been published. The paper describes experimental results for bulk specimens as well as presenting a model. Almost all the hydrogen is found to be located less than 100 {mu}m from the surface. This model is used to interpret the experimental results on foils in the present report. Since the model is fully based on fundamental equations, it can be used to analyse what happens in new situations. In this report the effect of the charging intensity, the grain size, the critical nucleus size for hydrogen bubble formation as well as the charging time are analysed.

Doping of two-dimensional MoS2 by high energy ion implantation

Science.gov (United States)

Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

2017-12-01

Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

Organic chemistry of elemental phosphorus

International Nuclear Information System (INIS)

Milyukov, V A; Budnikova, Yulia H; Sinyashin, Oleg G

2005-01-01

The principal achievements and the modern trends in the development of the chemistry of elemental phosphorus are analysed, described systematically and generalised. The possibilities and advantages of the preparation of organophosphorus compounds directly from white phosphorus are demonstrated. Attention is focused on the activation and transformation of elemental phosphorus in the coordination sphere of transition metal complexes. The mechanisms of the reactions of white phosphorus with nucleophilic and electrophilic reagents are discussed. Electrochemical approaches to the synthesis of organic phosphorus derivatives based on white phosphorus are considered.

Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

CERN Document Server

Hong, N H; Sakai, J; Iwasaki, H

2003-01-01

Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

First-principles investigation of adsorption and diffusion of Li on doped silicenes: Prospective materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Momeni, Mohammad Jafar; Mousavi-Khoshdel, Morteza, E-mail: mmousavi@iust.ac.ir; Targholi, Ehsan

2017-05-01

In this report, we investigate the adsorption energies and diffusion characteristics of Li atom on doped silicenes using first principles density functional theory (DFT) calculations. Our results show that the Li adsorption energy on doped silicenes is larger than pristine silicene. Based on our calculations, Al- and B-doped silicenes, due to creating an electron-deficient center in silicene, show a stronger interaction with Li atom compared to P- and N-doped silicenes. The obtained data for surface and perpendicular diffusion of Li atom show the easier mobility of Li on some doped silicenes compared to pristine silicene. According to our results, doping silicene with nitrogen and phosphorus atoms facilitates the Li surface mobility (diffusion barrier of 0.05 and 0.11 eV, respectively versus 0.18 eV for pure silicene) while, doping with aluminum, speed Li perpendicular diffusion (1.47 eV versus 1.67 eV for pristine silicene). The adsorption energy and diffusion barrier values, show the advantage of doped silicenes for use in LIBs with respect to pure silicene. - Highlights: • Calculation of adsorption energy of lithium on pristine and doped silicenes. • Surface and perpendicular diffusion barrier of Li on doped silicenes. • Examination of electronic structure of Li adsorbed doped silicenes.

First-principles investigation of adsorption and diffusion of Li on doped silicenes: Prospective materials for lithium-ion batteries

International Nuclear Information System (INIS)

Momeni, Mohammad Jafar; Mousavi-Khoshdel, Morteza; Targholi, Ehsan

2017-01-01

In this report, we investigate the adsorption energies and diffusion characteristics of Li atom on doped silicenes using first principles density functional theory (DFT) calculations. Our results show that the Li adsorption energy on doped silicenes is larger than pristine silicene. Based on our calculations, Al- and B-doped silicenes, due to creating an electron-deficient center in silicene, show a stronger interaction with Li atom compared to P- and N-doped silicenes. The obtained data for surface and perpendicular diffusion of Li atom show the easier mobility of Li on some doped silicenes compared to pristine silicene. According to our results, doping silicene with nitrogen and phosphorus atoms facilitates the Li surface mobility (diffusion barrier of 0.05 and 0.11 eV, respectively versus 0.18 eV for pure silicene) while, doping with aluminum, speed Li perpendicular diffusion (1.47 eV versus 1.67 eV for pristine silicene). The adsorption energy and diffusion barrier values, show the advantage of doped silicenes for use in LIBs with respect to pure silicene. - Highlights: • Calculation of adsorption energy of lithium on pristine and doped silicenes. • Surface and perpendicular diffusion barrier of Li on doped silicenes. • Examination of electronic structure of Li adsorbed doped silicenes.

Sargasso Sea phosphorus biogeochemistry: an important role for dissolved organic phosphorus (DOP

Directory of Open Access Journals (Sweden)

M. W. Lomas

2010-02-01

Full Text Available Inorganic phosphorus (SRP concentrations in the subtropical North Atlantic are some of the lowest in the global ocean and have been hypothesized to constrain primary production. Based upon data from several transect cruises in this region, it has been hypothesized that dissolved organic phosphorus (DOP supports a significant fraction of primary production in the subtropical North Atlantic. In this study, a time-series of phosphorus biogeochemistry is presented for the Bermuda Atlantic Time-series Study site, including rates of phosphorus export. Most parameters have a seasonal pattern, although year-over-year variability in the seasonal pattern is substantial, likely due to differences in external forcing. Suspended particulate phosphorus exhibits a seasonal maximum during the spring bloom, despite the absence of a seasonal peak in SRP. However, DOP concentrations are at an annual maximum prior to the winter/spring bloom and decline over the course of the spring bloom while whole community alkaline phosphatase activities are highest. As a result of DOP bioavailability, the growth of particles during the spring bloom occurs in Redfield proportions, though particles exported from the euphotic zone show rapid and significant remineralization of phosphorus within the first 50 m below the euphotic zone. Based upon DOP data from transect cruises in this region, the southward cross gyral flux of DOP is estimated to support ~25% of annual primary production and ~100% of phosphorus export. These estimates are consistent with other research in the subtropical North Atlantic and reinforce the hypothesis that while the subtropics may be phosphorus stressed (a physiological response to low inorganic phosphorus, utilization of the DOP pool allows production and accumulation of microbial biomass at Redfield proportions.

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

CERN Document Server

Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

2012-01-01

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

Phosphorus use efficiency of maize: an investigation using radiotracer phosphorus (32P)

International Nuclear Information System (INIS)

Meena, S.

2017-01-01

A better understanding on the nutrient uptake and utilization by plants is essential for developing better nutrient efficient cultivars suited for optimal production. Precise information on the PUE of crops and P dynamics can be obtained with the help of radiotracer technique. To study the phosphorus acquisition and phosphorus use efficiency of added sources in maize using 32 P, a pot culture experiment was conducted in a medium P soil (21.26 kg ha -1 ). The treatments were P as Single Superphosphate, Enriched FYM with Single Superphosphate (EFYM), DAP, Nutriseed pack (SSP), Nutriseed pack (DAP). The above treatments were applied along with phosphobacteria. Totally there were ten treatments replicated four times. Phosphorus sources were tagged with 32 P (obtained as 32 P in orthophosphoric medium from the Board of Radiation and Isotope Technology) and applied as per the treatments. Radioactive 32 P in the grain and stover sample was determined using Liquid Scintillation Counter (Perkin Elmer Tricarb 2810 R). Using the data, per cent phosphorus derived from fertilizer (%Pdff), per cent phosphorus derived from soil (%Pdfs), Phosphorus Use Efficiency (PUE) and A value were determined. Application of Phosphorus (SSP, DAP, enriched FYM with SSP, Nutriseed pack (SSP) and Nutriseed pack (DAP)) along with PB increased the per cent phosphorus derived from fertilizer (% Pdff), P uptake from fertilizer and PUE. The highest PUE of 25.38 was recorded in the treatment where enriched FYM with SSP was applied along with PB. (author)

Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

Science.gov (United States)

Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

1996-01-01

We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

Science.gov (United States)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

International Nuclear Information System (INIS)

Brotzmann, Sergej; Bracht, Hartmut

2008-01-01

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity germanium (Ge) were performed at temperatures between 600 and 920 deg. C. Secondary ion mass spectrometry and spreading resistance profiling were applied to determine the concentration profiles of the chemically and electrically active dopants. Intrinsic and extrinsic doping conditions result in a complementary error function and box-shaped diffusion profiles, respectively. These profiles demonstrate enhanced dopant diffusion under extrinsic doping. Accurate modeling of dopant diffusion is achieved on the basis of the vacancy mechanism taking into account singly negatively charged dopant-vacancy pairs and doubly negatively charged vacancies. The activation enthalpy and pre-exponential factor for dopant diffusion under intrinsic condition were determined to 2.85 eV and 9.1 cm 2 s -1 for P, 2.71 eV and 32 cm 2 s -1 for As, and 2.55 eV and 16.7 cm 2 s -1 for Sb. With increasing atomic size of the dopants the activation enthalpy decreases. This is attributed to differences in the binding energy of the dopant-vacancy pairs

Towards global phosphorus security: A systems framework for phosphorus recovery and reuse options

NARCIS (Netherlands)

Cordell, D.; Rosemarin, A.; Schroder, J.J.; Smit, A.L.

2011-01-01

Human intervention in the global phosphorus cycle has mobilised nearly half a billion tonnes of the element from phosphate rock into the hydrosphere over the past half century. The resultant water pollution concerns have been the main driver for sustainable phosphorus use (including phosphorus

Effect of supplemented fungal phytase on performance and phosphorus availability by phosphorus-depleted juvenile rainbow trout (Oncorhynchus mykiss), and on the magnitude and composition of phosphorus waste output

DEFF Research Database (Denmark)

Dalsgaard, Anne Johanne Tang; Schøn Ekmann, K.; Pedersen, Per Bovbjerg

2009-01-01

The effect of a supplemental fungal phytase on performance and phosphorus availability by juvenile rainbow trout fed diets with a high inclusion of plant based protein and on the magnitude and composition of the waste phosphorus production was tested in a 2 × 3 factorial design at a temperature....../suspended phosphorus waste output from fish fed the phytase supplemented diet containing 0.71% available phosphorus, suggesting that the phosphorus requirement was reached at this phosphorus level. Consistent with this, there was a substantial increase in the dissolved/suspended phosphorus waste output from fish fed...... the phytase supplemented diet containing 0.81% available phosphorus, suggesting that the phosphorus requirement was exceeded in this group. This study demonstrated that phytase supplementation will be advantageous to the fish and the environment if supplemented to low-phosphorus diets containing a large share...

III. Quantitative aspects of phosphorus excretionin ruminants

OpenAIRE

Bravo , David; Sauvant , Daniel; Bogaert , Catherine; Meschy , François

2003-01-01

International audience; Ruminant phosphorus excretion and metabolism were studied through a database. Faecal endogenous phosphorus is the main pathway of phosphorus excretion and averages 0.85 of total faecal phosphorus. The remaining 0.15 is unabsorbed dietary phosphorus. Faecal endogenous phosphorus is mainly unabsorbed phosphorus, with saliva being the major source, and is correlated to factors influencing saliva secretion (DM intake, physical dietary characteristics and dietary phosphorus...

Phosphorus blood test

Science.gov (United States)

... page: //medlineplus.gov/ency/article/003478.htm Phosphorus blood test To use the sharing features on this page, please enable JavaScript. The phosphorus blood test measures the amount of phosphate in the blood. ...

Screening crops for efficient phosphorus acquisition in a low phosphorus soil using radiotracer technique

International Nuclear Information System (INIS)

Meena, S.; Malarvizhi, P.; Rajeswari, R.

2017-01-01

Deficiency of phosphorus (P) is the major limitation to agricultural production. Identification of cultivars with greater capacity to grow in soils having low P availability (phosphorus efficiency) will help in P management in a sustainable way. Green house experiment with maize (CO 6) and cotton (MCU 13) as test crops with four levels of phosphorus (0, 3.75, 7.50 and 15 mg P kg -1 soil) was conducted in a P deficient soil (7.2 kg ha -1 ) to study the phosphorus acquisition characteristics and to select efficient crop using 32 P radiotracer technique. Carrier free 32 P obtained as orthophosphoric acid in dilute hydrochloric acid medium from the Board of Radiation and Isotope Technology, Mumbai was used for labeling the soil @ 3200 kBq pot -1 . After 60 days the crops were harvested and the radioactivity was measured in the plant samples using Liquid scintillation counter (PerkinElmer - Tricarb 2810 TR). Different values of specific radioactivity and Isotopically Exchangeable Phosphorus for maize and cotton indicated that chemically different pools of soil P were utilized and maize accessing a larger pool than cotton. Maize having recorded high Phosphorus Use Efficiency, Phosphorus Efficiency and low Phosphorus Stress Factor values, it is a better choice for P deficient soils. Higher Phosphorus Acquisition Efficiency of maize (59 %) than cotton (48%) can be related to the ability of maize to take up P from insoluble inorganic P forms. (author)

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Hot wire and spark pyrolysis as simple new routes to silicon nanoparticle synthesis

CSIR Research Space (South Africa)

Scriba, MR

2012-11-01

Full Text Available doped silicon powders have a much higher conductivity than those doped with phosphorus. TEM and XPS analysis reveals that the difference in electrical resistivity between boron an phosphorus doped particles can be attributed to phosphorus dopants being...

Few-layer black phosphorus nanoparticles.

Science.gov (United States)

Sofer, Zdenek; Bouša, Daniel; Luxa, Jan; Mazanek, Vlastimil; Pumera, Martin

2016-01-28

Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.

Physical properties of P and B doped microcrystalline SI:H deposited by PECVD

International Nuclear Information System (INIS)

Rubino, A.; Addonizio, M.L.; Conte, G.; Nobile, G.; Terzini, E.

1993-01-01

Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data

Dietary phosphorus acutely impairs endothelial function.

Science.gov (United States)

Shuto, Emi; Taketani, Yutaka; Tanaka, Rieko; Harada, Nagakatsu; Isshiki, Masashi; Sato, Minako; Nashiki, Kunitaka; Amo, Kikuko; Yamamoto, Hironori; Higashi, Yukihito; Nakaya, Yutaka; Takeda, Eiji

2009-07-01

Excessive dietary phosphorus may increase cardiovascular risk in healthy individuals as well as in patients with chronic kidney disease, but the mechanisms underlying this risk are not completely understood. To determine whether postprandial hyperphosphatemia may promote endothelial dysfunction, we investigated the acute effect of phosphorus loading on endothelial function in vitro and in vivo. Exposing bovine aortic endothelial cells to a phosphorus load increased production of reactive oxygen species, which depended on phosphorus influx via sodium-dependent phosphate transporters, and decreased nitric oxide production via inhibitory phosphorylation of endothelial nitric oxide synthase. Phosphorus loading inhibited endothelium-dependent vasodilation of rat aortic rings. In 11 healthy men, we alternately served meals containing 400 mg or 1200 mg of phosphorus in a double-blind crossover study and measured flow-mediated dilation of the brachial artery before and 2 h after the meals. The high dietary phosphorus load increased serum phosphorus at 2 h and significantly decreased flow-mediated dilation. Flow-mediated dilation correlated inversely with serum phosphorus. Taken together, these findings suggest that endothelial dysfunction mediated by acute postprandial hyperphosphatemia may contribute to the relationship between serum phosphorus level and the risk for cardiovascular morbidity and mortality.

Effect of phosphorus stress on Microcystis aeruginosa growth and phosphorus uptake.

Directory of Open Access Journals (Sweden)

Sajeela Ghaffar

Full Text Available This study was designed to advance understanding of phosphorus regulation of Microcystis aeruginosa growth, phosphorus uptake and storage in changing phosphorus (P conditions as would occur in lakes. We hypothesized that Microcystis growth and nutrient uptake would fit classic models by Monod, Droop, and Michaelis-Menten in these changing conditions. Microcystis grown in luxury nutrient concentrations was transferred to treatments with phosphorus concentrations ranging from 0-256 μg P∙L-1 and luxury nitrogen. Dissolved phosphorus concentration, cell phosphorus quota, P uptake rate and cell densities were measured at day 3 and 6. Results showed little relationship to predicted models. Microcystis growth was asymptotically related to P treatment from day 0-3, fitting Monod model well, but negatively related to P treatment and cell quota from day 3-6. From day 0-3, cell quota was negatively related to P treatments at <2 μg∙L-1, but increased slightly at higher P. Cell quota decreased greatly in low P treatments from day 3-6, which may have enabled high growths in low P treatments. P uptake was positively and linearly related to P treatment during both periods. Negative uptake rates and increases in measured culture phosphorus concentrations to 5 μg∙L-1 in the lowest P treatments indicated P leaked from cells into culture medium. This leakage during early stages of the experiment may have been sufficient to stimulate metabolism and use of intracellular P stores in low P treatments for rapid growth. Our study shows P regulation of Microcystis growth can be complex as a result of changing P concentrations, and this complexity may be important for modeling Microcystis for nutrient and ecosystem management.

Phosphorus in Agriculture : 100 % Zero

NARCIS (Netherlands)

Schnug, Ewald; De Kok, Luit J.

2016-01-01

Phosphorus is essential for all living organisms, reserves in geogenic deposits are finite, and phosphorus nutrient mining and oversupply are common phenomenons on agricultural soils. Only if the agricultural phosphorus cycle can be closed and the fertilized nutrient been utilized completely,

Further considerations for damping in heavily insulated pipe systems

International Nuclear Information System (INIS)

Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

1985-01-01

Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

Further considerations for damping in heavily insulated pipe systems

International Nuclear Information System (INIS)

Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

1985-01-01

Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

Lithium-doped hydroxyapatite nano-composites: Synthesis, characterization, gamma attenuation coefficient and dielectric properties

Science.gov (United States)

Badran, H.; Yahia, I. S.; Hamdy, Mohamed S.; Awwad, N. S.

2017-01-01

Lithium-hydroxyapatite (0, 1, 5, 10, 20, 30 and 40 wt% Li-HAp) nano-composites were synthesized by sol-gel technique followed by microwave-hydrothermal treatment. The composites were characterized by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS), Fourier transform infrared (FTIR) and Raman techniques. Gamma attenuation coefficient and the dielectric properties for all composites were investigated. The crystallinity degree of Li-doped HAp was higher than that of un-doped HAp. Gamma attenuation coefficient values increased from 0.562 cm-1 for 0 wt% Li-HAp to 2.190 cm-1 for 40 wt% Li-HAp. The alternating current conductivity increased with increasing frequency. The concentration of Li affect the values of dielectric constant where Li doped HAp of low dielectric constant can have an advantage for healing in bone fractures. The calcium to phosphorus ratio decreased from 1.43 to 1.37 with the addition of lithium indicating the Ca deficiency in the studied composites. Our findings lead to the conclusion that Li-HAp is a new nano-composite useful for medical applications and could be doped with gamma shield materials.

Phosphorus poisoning in waterfowl

Science.gov (United States)

Coburn, D.R.; DeWitt, J.B.; Derby, J.V.; Ediger, E.

1950-01-01

Black ducks and mallards were found to be highly susceptible to phosphorus poisoning. 3 mg. of white phosphorus per kg. of body weight given in a single dose resulted in death of a black duck in 6 hours. Pathologic changes in both acute and chronic poisoning were studied. Data are presented showing that diagnosis can be made accurately by chemical analysis of stored tissues in cases of phosphorus poisoning.

Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

International Nuclear Information System (INIS)

Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

2006-01-01

There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

Energy Technology Data Exchange (ETDEWEB)

Zhang, Feng; Wang, Yaling; Miao, Yanqin; Yang, Yongzhen, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); He, Yuheng; Liu, Xuguang, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

2016-08-22

Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Science.gov (United States)

Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

2018-04-01

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

Multilevel structures of Li3V2(PO4)3/phosphorus-doped carbon nanocomposites derived from hybrid V-MOFs for long-life and cheap lithium ion battery cathodes

Science.gov (United States)

Wang, Zhaoyang; He, Wen; Zhang, Xudong; Yue, Yuanzheng; Liu, Jinhua; Zhang, Chuanjiang; Fang, Leyong

2017-10-01

The Li3V2(PO4)3/phosphorus-doped carbon (LVP/P-C) nanocomposites with multilevel structures (such as spheroidal, foam, prism and flower-like structures) are synthesized via one-pot in-situ synthesis using hybrid vanadium metal-organic frameworks (V-MOFs) as precursor. The structure and morphology of the LVP/P-C nanocomposites were characterized by scanning electron microscopy, transmission electron microscopy, Raman, X-ray diffraction and element mapping. The results show that the multilevel structures are generated from the assemblies of the hybrid surfactant templates in the glass fiber drawing wastewater (GFDW) and the hybrid V-MOFs. The structure of LVP/P-C nanocomposite is controlled by V-MOFs. The nanocomposites exhibit a long service life, a discharge capacity of 65 mA h g-1 at 10 C with 90% capacity retention after 1100 cycles. The high cycling stability is attributed to the multilevel structures, which is ideal for making rechargeable lithium ion batteries. More importantly, our results have demonstrated that GFDW can be transformed into treasure of multilevel structure nanocomposites for cheap Li ion batteries.

Sewage-effluent phosphorus: A greater risk to river eutrophication than agricultural phosphorus?

International Nuclear Information System (INIS)

Jarvie, Helen P.; Neal, Colin; Withers, Paul J.A.

2006-01-01

Phosphorus (P) concentrations from water quality monitoring at 54 UK river sites across seven major lowland catchment systems are examined in relation to eutrophication risk and to the relative importance of point and diffuse sources. The over-riding evidence indicates that point (effluent) rather than diffuse (agricultural) sources of phosphorus provide the most significant risk for river eutrophication, even in rural areas with high agricultural phosphorus losses. Traditionally, the relative importance of point and diffuse sources has been assessed from annual P flux budgets, which are often dominated by diffuse inputs in storm runoff from intensively managed agricultural land. However, the ecological risk associated with nuisance algal growth in rivers is largely linked to soluble reactive phosphorus (SRP) concentrations during times of ecological sensitivity (spring/summer low-flow periods), when biological activity is at its highest. The relationships between SRP and total phosphorus (TP; total dissolved P + suspended particulate P) concentrations within UK rivers are evaluated in relation to flow and boron (B; a tracer of sewage effluent). SRP is the dominant P fraction (average 67% of TP) in all of the rivers monitored, with higher percentages at low flows. In most of the rivers the highest SRP concentrations occur under low-flow conditions and SRP concentrations are diluted as flows increase, which is indicative of point, rather than diffuse, sources. Strong positive correlations between SRP and B (also TP and B) across all the 54 river monitoring sites also confirm the primary importance of point source controls of phosphorus concentrations in these rivers, particularly during spring and summer low flows, which are times of greatest eutrophication risk. Particulate phosphorus (PP) may form a significant proportion of the phosphorus load to rivers, particularly during winter storm events, but this is of questionable relevance for river eutrophication

Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

International Nuclear Information System (INIS)

Montanez, A.; Zapata, F.; Kumarasinghe, K.S.

1996-01-01

A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. 15 N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs

Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

Energy Technology Data Exchange (ETDEWEB)

Montanez, A; Zapata, F [FAO/IAEA Agriculture and Biotechnology Lab., Seibersdorf (Austria). Soils Science Unit; Kumarasinghe, K S [Joint FAO/IAEA Div. of Nuclear Techniques in Food and Agriculture, Vienna (Austria). Soil Fertility, Irrigation and Crop Production Section

1996-07-01

A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. {sup 15}N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs.

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

Science.gov (United States)

Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

2015-06-01

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

International Nuclear Information System (INIS)

Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

1996-01-01

The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

SEQUENTIAL ELECTRODIALYTIC EXTRACTION OF PHOSPHORUS COMPOUNDS

DEFF Research Database (Denmark)

2017-01-01

The present invention relates to an apparatus for electrodialytic extraction of phosphorus from a particulate material in suspension and to a method for electrodialytic phosphorus recovery, which uses the apparatus. The method may be applied for wastewater treatment, and/or treatment of particulate...... material rich in phosphorus. The present invention provides an apparatus for electrodialytic extraction of phosphorus from a particulate material comprising acidic and/or alkaline soluble phosphorus compounds, in suspension, comprising: • a first electrodialytic cell comprising a first anolyte compartment...

Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals

International Nuclear Information System (INIS)

Pi, Xiaodong; Ni, Zhenyi; Yang, Deren; Delerue, Christophe

2014-01-01

In contrast to the conventional doping of bulk silicon (Si), the doping of Si nanocrystals (NCs) that are often smaller than 5 nm in diameter may lead to serious structural changes. Since the electronic and optical properties of Si NCs are intimately associated with their structures, it is critical to understand how doping impacts the structures of Si NCs. By means of ab initio calculation we now compare 1.4 nm phosphorus (P)-doped Si NCs without structural relaxation and those with structural relaxation. Structural changes induced by structural relaxation are manifested by the stretching and compressing of bonds and apparent variations in bond angles. With the increase of the concentration of P structural changes induced by structural relaxation become more serious. It is found that structural relaxation makes differences in the energy-level schemes of P-doped Si NCs. Structural relaxation also causes the binding energy of an electron in a P-doped Si NC to more significantly increase as the concentration of P increases. With the increase of the concentration of P structural relaxation leads to more pronounced changes in the optical absorption of P-doped Si NCs

Phosphorus containing sintered alloys (review)

International Nuclear Information System (INIS)

Muchnik, S.V.

1984-01-01

Phosphorus additives are considered for their effect on the properties of sintered alloys of different applications: structural, antifriction, friction, magnetic, hard, superhard, heavy etc. Data are presented on compositions and properties of phosphorus-containing materials produced by the powder metallurgy method. Phosphorus is shown to be an effective activator of sintering in some cases. When its concentration in the material is optimal it imparts the material such properties as strength, viscosity, hardness, wear resistance. Problems concerning powder metallurgy of amorphous phosphorus-containing alloys are reported

Phosphorus and the dairy cow

OpenAIRE

Ekelund, Adrienne

2003-01-01

The general aim of the present work was to investigate phosphorus balance in the dairy cow, with reference to the amount and source of phosphorus. Furthermore, biochemical bone markers were used to study the bone turnover during the lactation and dry period. Phosphorus is located in every cell of the body and has more known functions than any other mineral element in the animal body. Phosphorus is also an important constituent of milk, and is therefore required in large amounts in a high yiel...

Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

Science.gov (United States)

Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

2017-11-01

Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

Fertilizer phosphorus in some Finnish soils

Directory of Open Access Journals (Sweden)

Armi Kaila

1961-01-01

Full Text Available In the present paper it is tried to trace the fate of fertilizer phosphorus in soil by comparing the analyses of soils from treated and untreated plots of field trials. This indirect approach cannot be expected to provide exact values, but it is likely to give an approximate answer. The results reported above do not in any marked degree change our present conception of the forms in which fertilizer phosphorus accumulates in soils. In the acid soils studied (pH 4—6.4 in 0.02 N CaCl2 superphosphate tended to increase the fractions which were extracted by NH4F or NaOH. Hyperphosphate phosphorus was mostly found in the acid-soluble fraction. During a longer period of dressing with phosphate an increase in the organic phosphorus content of a peat soil could be detected. In the incubation experiments the mineralization of organic phosphorus occurred at a higher rate in the samples from the plots treated with superphosphate than in those from the untreated one. It might be supposed that the organic phosphorus mineralized mainly originated from the plant residues. It seems that the fractionation method developed by CHANG and JACKSON (4 for the estimation of discrete forms of soil phosphorus is not quite satisfactory for tracing the fertilizer phosphorus in soils recently dressed with phosphates. In particular, it may be fallacious to conclude that the fraction extracted by NH4F would only represent phosphorus bound to aluminium and its compounds. At least in the absence of soil, a large part of phosphorus in dicalcium phosphate dihydrate falls into this fraction, and also a small amount of hyperphosphate phosphorus may be found in it. The test values for »available» phosphorus showed the effect of fertilizers in accordance with previous observations (9, 13. Acetic acid soluble P revealed the treatment with hyperphosphate, but only slightly the application of superphosphate. The test value for the sorbed P of BRAY and KURTZ (2, or phosphorus

Reconceptualising the Gender of Fitness Doping: Performing and Negotiating Masculinity through Drug-Use Practices

Directory of Open Access Journals (Sweden)

Jesper Andreasson

2015-08-01

Full Text Available This article analyses self-portrayals and gender constructions among Swedish male bodybuilders who are engaged in fitness doping. The empirical material comes from a larger ethnographic investigation into gym culture. The results show that there is a strong propensity to conform with particular gender fantasies that rests heavily on a binary understanding of gendered, doped bodies. However, this storyline does not apprehend the entire self-presentation of the analysed drug users. Negotiations and inclusive subversions of traditional gender norms are also expressed. For example, the narratives show how the use of performance-enhancing substances makes it possible for (heterosexual men to approach, touch and express feelings of desire towards other men and their bodies. As such, this practice can be viewed as a contestation of hegemonic gender values, in which masculinity and fitness doping are detached from a quite heterosexist understanding, and turned into a symbolic world of homoerotic pleasure.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

International Nuclear Information System (INIS)

Roumie, M.; Nsouli, B.

2001-01-01

Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

Phosphorus Regulation in Chronic Kidney Disease.

Science.gov (United States)

Suki, Wadi N; Moore, Linda W

2016-01-01

Serum phosphorus levels stay relatively constant through the influence of multiple factors-such as parathyroid hormone, fibroblast growth factor 23, and vitamin D-on the kidney, bone, and digestive system. Whereas normal serum phosphorus ranges between 3 mg/dL to 4.5 mg/dL, large cross-sectional studies have shown that even people with normal kidney function are sometimes found to have levels ranging between 1.6 mg/dL and 6.2 mg/dL. While this may partially be due to diet and the factors mentioned above, total understanding of these atypical ranges of serum phosphorus remains uncertain. Risks for bone disease are high in people aged 50 and older, and this group comprises a large proportion of people who also have chronic kidney disease. Consuming diets low in calcium and high in phosphorus, especially foods with phosphate additives, further exacerbates bone turnover. Existing bone disease increases the risk for high serum phosphorus, and higher serum phosphorus has been associated with increased adverse events and cardiovascular-related mortality both in people with chronic kidney disease and in those with no evidence of disease. Once kidney function has deteriorated to end-stage disease (Stage 5), maintaining normal serum phosphorus requires dietary restrictions, phosphate-binding medications, and dialysis. Even so, normal serum phosphorus remains elusive in many patients with Stage 5 kidney disease, and researchers are testing novel targets that may inhibit intestinal transport of phosphorus to achieve better phosphate control. Protecting and monitoring bone health should also aid in controlling serum phosphorus as kidney disease advances.

Development of a radiochemical procedure for certification of phosphorus implantation dose in silicon

International Nuclear Information System (INIS)

Paul, R.L.; Simons, D.S.

2002-01-01

The U.S. semiconductor industry relies heavily on secondary ion mass spectrometry (SIMS) for characterization of the depth distribution of dopants such as boron, arsenic, and phosphorus in silicon. To assist the industry in achieving high accuracy measurements, two Standard Reference Materials (SRMs) have been developed by NIST as SIMS calibration standards: SRM 2137 (Boron Implant in Silicon), certified by neutron depth profiling, and SRM 2134 (Arsenic Implant in Silicon), certified by instrumental neutron activation analysis. The industry is still in need of a phosphorus standard. Plans are currently underway to develop a phosphorus implant in silicon SRM, to be certified by radiochemical neutron activation analysis (RNAA). RNAA was chosen because other techniques lack the necessary sensitivity, chemical specificity and matrix independence to measure phosphorus at implantation levels. In order to assess the sensitivity, accuracy, and precision of RNAA for this work, preliminary measurements were carried out on six pieces of a phosphorus-implanted silicon wafer that was previously used in a round-robin study of SIMS measurement repeatability. Standards were prepared by depositing micro litre amounts of a standardized phosphorus solution on aluminum foil. A non-implanted silicon wafer was analysed as a blank. Samples were irradiated at a neutron fluency rate of 1 x 10 14 cm -2 s -1 to convert 31 P to 32 P, then mixed with milligram amounts of phosphorus carrier and dissolved in a mixture of nitric and hydrofluoric acids. Phosphorus was separated from the matrix by precipitation first as ammonium phosphomolybdate then as magnesium ammonium phosphate. The yield (fraction of recovered carrier) was determined gravimetrically as Mg(NH 4 )PO 4 .6H 2 O. 32 P was measured using a beta proportional counter. The measurements yielded a mean and standard deviation of (8.35 ± 0.20) x 10 14 atoms.cm -2 (relative standard deviation = 2.35 %), in agreement with both the nominal

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Phosphorus-doped thin silica films characterized by magic-angle spinning nuclear magnetic resonance spectroscopy

DEFF Research Database (Denmark)

Jacobsen, H.J.; Skibsted, J.; Kristensen, Martin

2001-01-01

Magic-angle spinning nuclear magnetic resonance spectra of 31P and 29Si have been achieved for a thin silica film doped with only 1.8% 31P and deposited by plasma enhanced chemical vapor deposition on a pure silicon wafer. The observation of a symmetric 31P chemical shift tensor is consistent...

Phosphorus and Nutrition in Chronic Kidney Disease

Directory of Open Access Journals (Sweden)

Emilio González-Parra

2012-01-01

Full Text Available Patients with renal impairment progressively lose the ability to excrete phosphorus. Decreased glomerular filtration of phosphorus is initially compensated by decreased tubular reabsorption, regulated by PTH and FGF23, maintaining normal serum phosphorus concentrations. There is a close relationship between protein and phosphorus intake. In chronic renal disease, a low dietary protein content slows the progression of kidney disease, especially in patients with proteinuria and decreases the supply of phosphorus, which has been directly related with progression of kidney disease and with patient survival. However, not all animal proteins and vegetables have the same proportion of phosphorus in their composition. Adequate labeling of food requires showing the phosphorus-to-protein ratio. The diet in patients with advanced-stage CKD has been controversial, because a diet with too low protein content can favor malnutrition and increase morbidity and mortality. Phosphorus binders lower serum phosphorus and also FGF23 levels, without decreasing diet protein content. But the interaction between intestinal dysbacteriosis in dialysis patients, phosphate binder efficacy, and patient tolerance to the binder could reduce their efficiency.

The location and nature of accumulated phosphorus in seven sludges from activated sludge plants which exhibited enhanced phosphorus removal

International Nuclear Information System (INIS)

Buchan, L.

1981-01-01

Electron microscopy combined with the energy dispersive analysis of X-rays (EDX) has been used to examine the nature of the phosphorus accumulated in sludges from seven activated sludge plants exhibiting enhanced phosphorus removal. Large phosphorus accumulations were located in identical structures in the sludges examined. The phosphorus was located in large electron-dense bodies, within large bacterial cells which were characteristically grouped in clusters. The calcium:phosphorus ratio of these electron-dense bodies precluded them from being any form of calcium phosphate precipitate. Quantitative analysis indicated that the electron-dense bodies contained in excess of 30% phosphorus. The results obtained are supportive of a biological mechanism of enhanced phosphorus uptake in activated sludge

Peak Phosphorus: Clarifying the Key Issues of a Vigorous Debate about Long-Term Phosphorus Security

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Stuart White

2011-10-01

Full Text Available This paper reviews the latest information and perspectives on global phosphorus scarcity. Phosphorus is essential for food production and modern agriculture currently sources phosphorus fertilizers from finite phosphate rock. The 2008 food and phosphate fertilizer price spikes triggered increased concerns regarding the depletion timeline of phosphate rock reserves. While estimates range from 30 to 300 years and are shrouded by lack of publicly available data and substantial uncertainty, there is a general consensus that the quality and accessibility of remaining reserves are decreasing and costs will increase. This paper clarifies common sources of misunderstandings about phosphorus scarcity and identifies areas of consensus. It then asks, despite some persistent uncertainty, what would it take to achieve global phosphorus security? What would a ‘hard-landing’ response look like and how could preferred ‘soft-landing’ responses be achieved?

The effect of preparation method on the proton conductivity of indium doped tin pyrophosphates

DEFF Research Database (Denmark)

Anfimova, Tatiana; Lie-Andersen, T.; Jensen, E. Pristed

2015-01-01

Indium doped tin pyrophosphates were prepared by three synthetic routes. A heterogeneous synthesis from metal oxides with excess phosphoric acid produces crystalline phosphate particles with a phosphorus rich amorphous phase along the grain boundaries. The amorphous phase prevents the agglomeration...... decrease in conductivity as well as significant agglomeration of the particles, as evident in TEM and from particle size distribution measurements. Homogeneous synthesis with soluble metal acetates or chlorides as precursors results in a single crystalline phase with a small particle size, but strongly...... agglomerated, and a low conductivity at 10- 7-10- 6 Scm- 1 level. Further impregnation of the agglomerates with phosphoric acid does not lead to formation of the phosphorus rich amorphous layers on the surface of the crystals. An intermediate conductivity of 10- 3 Scm- 1 was observed for the acid treated...

Determination of phosphorus in metals by neutron activation and chemical separation as hydride

International Nuclear Information System (INIS)

Rouchaud, J.C.; Fedoroff, M.

1993-01-01

Phosphorous at trace levels alters the properties of metals and alloys. Its determination was investigated by radiochemical neutron activation analysis. Separation by solvent extraction or by evolution as P 0 showed to be neither selective nor quantitative in presence of a metallic matrix. Therefore, a new method of separation by reduction to phosphorous hydride followed by liquid scintillation counting was investigated. This method is quantitative in the case of non-radioactive iron doped with radioactive phosphorus. At present, the separation is not quantitative for irradiation iron samples, owing probably to hot atom or radiation effects. A detection limit of 0.002 μg is expected. (author) 10 refs.; 1 fig.; 3 tabs

Design analysis of doped-silicon surface plasmon resonance immunosensors in mid-infrared range.

Science.gov (United States)

DiPippo, William; Lee, Bong Jae; Park, Keunhan

2010-08-30

This paper reports the design analysis of a microfabricatable mid-infrared (mid-IR) surface plasmon resonance (SPR) sensor platform. The proposed platform has periodic heavily doped profiles implanted into intrinsic silicon and a thin gold layer deposited on top, making a physically flat grating SPR coupler. A rigorous coupled-wave analysis was conducted to prove the design feasibility, characterize the sensor's performance, and determine geometric parameters of the heavily doped profiles. Finite element analysis (FEA) was also employed to compute the electromagnetic field distributions at the plasmon resonance. Obtained results reveal that the proposed structure can excite the SPR on the normal incidence of mid-IR light, resulting in a large probing depth that will facilitate the study of larger analytes. Furthermore, the whole structure can be microfabricated with well-established batch protocols, providing tunability in the SPR excitation wavelength for specific biosensing needs with a low manufacturing cost. When the SPR sensor is to be used in a Fourier-transform infrared (FTIR) spectroscopy platform, its detection sensitivity and limit of detection are estimated to be 3022 nm/RIU and ~70 pg/mm(2), respectively, at a sample layer thickness of 100 nm. The design analysis performed in the present study will allow the fabrication of a tunable, disposable mid-IR SPR sensor that combines advantages of conventional prism and metallic grating SPR sensors.

Estimation of phosphorus flux in rivers during flooding.

Science.gov (United States)

Chen, Yen-Chang; Liu, Jih-Hung; Kuo, Jan-Tai; Lin, Cheng-Fang

2013-07-01

Reservoirs in Taiwan are inundated with nutrients that result in algal growth, and thus also reservoir eutrophication. Controlling the phosphorus load has always been the most crucial issue for maintaining reservoir water quality. Numerous agricultural activities, especially the production of tea in riparian areas, are conducted in watersheds in Taiwan. Nutrients from such activities, including phosphorus, are typically flushed into rivers during flooding, when over 90% of the yearly total amount of phosphorous enters reservoirs. Excessive or enhanced soil erosion from rainstorms can dramatically increase the river sediment load and the amount of particulate phosphorus flushed into rivers. When flow rates are high, particulate phosphorus is the dominant form of phosphorus, but sediment and discharge measurements are difficult during flooding, which makes estimating phosphorus flux in rivers difficult. This study determines total amounts of phosphorus transport by measuring flood discharge and phosphorous levels during flooding. Changes in particulate phosphorus, dissolved phosphorus, and their adsorption behavior during a 24-h period are analyzed owing to the fact that the time for particulate phosphorus adsorption and desorption approaching equilibrium is about 16 h. Erosion of the reservoir watershed was caused by adsorption and desorption of suspended solids in the river, a process which can be summarily described using the Lagmuir isotherm. A method for estimating the phosphorus flux in the Daiyujay Creek during Typhoon Bilis in 2006 is presented in this study. Both sediment and phosphorus are affected by the drastic discharge during flooding. Water quality data were collected during two flood events, flood in June 9, 2006 and Typhoon Bilis, to show the concentrations of suspended solids and total phosphorus during floods are much higher than normal stages. Therefore, the drastic changes of total phosphorus, particulate phosphorus, and dissolved phosphorus in

Resonant Raman and FTIR spectra of carbon doped GaN

Science.gov (United States)

Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

2015-03-01

Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

Stark shift of impurity doped quantum dots: Role of noise

Science.gov (United States)

Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

2018-02-01

Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

Total phosphorus, phytate phosphorus contents and the correlation of phytates with amylose in selected edible beans in Sri Lanka

Directory of Open Access Journals (Sweden)

Keerthana Sivakumaran

2018-02-01

Full Text Available Phytate a major anti nutritional factors in legumes and it accounts for larger portion of the total phosphorus, while limiting the bioavailablity of certain divalent cations to the human body. Legumes of eleven varieties cultivated in Sri Lanka, Mung bean (MI5, MI6, Cowpea (Waruni, MICP1, Bombay, Dhawala, ANKCP1, Soybean (MISB1, Pb1 and Horse gram (ANKBlack, ANKBrown were analyzed for phosphorus content and phytate content. Total phosphorus content was quantified by dry ashing followed by spectrophotometrical measurement of the blue colour intensity of acid soluble phosphate with sodium molybdate in the presence of ascorbic acid while phytate phosphorus using anion exchange chromatographic technique followed by spectrometrical measurement of the digested organic phosphorus and amylose content by Simple Iodine-Colourimetric method. Where the least value for phosphorus was observed 275.04 ±1.44 mg.100g-1 in ANKBlack (Horse gram and the highest in MISB1 (Soyabean with 654.94 ±0.05 mg.100g-1. The phytate phosphorus content (which is a ratio of phyate to total phosphorus was highest in Dhawala (Cowpea. The phytate phosphorus (which is a ratio of phyate to total phosphorus was highest in Dhawala with 67.42% and least in Bombay (Cowpea with 24.87%. The amylose content of the legumes was least in Pb1 with 8.71 ±0.13 mg.100mg-1 and the highest in MI6 22.58 ±0.71 mg.100mg-1. The correlation between phyate and total phosphorus was significant (p <0.05 and positive (r = 0.62. Similarly the correlation coefficient for phytate phosphorus and total phosphorus was significant (p <0.05 and positive (r = 0.63. Amylose content of legumes was significantly correlated negatively (p <0.05 with the total phytates content (r = -0.82.

Potential Phosphorus Mobilisation in Peat Soils

DEFF Research Database (Denmark)

Forsmann, Ditte M.; Kjærgaard, Charlotte

2012-01-01

Re-establishment of wetlands on peat soils containing phosphorus bound to iron(III)-oxides can lead to an undesirable phosphorus loss to the aquatic environment due to the reductive dissolution of iron(III)-oxides. Thus it is important to be able to assess the potential phosphorus mobilisation from...... peat soils before a re-establishment takes place. The potential phosphorus mobilisation from a peat soil depends not only on the geochemical characteristics but also on the redox conditions, the hydrological regime in the area as well as the hydro-physical properties of the soil. The hypothesis...... for this study is (i) the release of phosphorus in peat is controlled by the geochemistry; (ii) the mobilisation of phosphorus is controlled by both geochemistry and hydro-physics of the soil. For this study, 10 Danish riparian lowland areas with peat soil were selected based on their geochemical characteristics...

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Assessing the Long Term Impact of Phosphorus Fertilization on Phosphorus Loadings Using AnnAGNPS

OpenAIRE

Yuan, Yongping; Bingner, Ronald L.; Locke, Martin A.; Stafford, Jim; Theurer, Fred D.

2011-01-01

High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the ...

Phosphorus dendrimers for nanomedicine.

Science.gov (United States)

Caminade, Anne-Marie

2017-08-31

From biomaterials to imaging, and from drug delivery to drugs by themselves, phosphorus-containing dendrimers offer a large palette of biological properties, depending essentially on their types of terminal functions. The most salient examples of phosphorus dendrimers used for the elaboration of bio-chips and of supports for cell cultures, for imaging biological events, and for carrying and delivering drugs or biomacromolecules are presented in this feature article. Several phosphorus dendrimers can be considered also as drugs per se (by themselves) in particular to fight against cancers, neurodegenerative diseases, and inflammation, both in vitro and in vivo. Toxicity assays are also reported.

Effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus application rates

Directory of Open Access Journals (Sweden)

S. Fatih Ergin

2016-10-01

Full Text Available In this study, effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus fertilization rates were investigated. Phosphorus were added into growing media as 0, 50, 100 and 200 mg P2O5/kg with and without mycorrhiza applications. Phosphorus applications significantly increased yield criteria of lettuce according to the control treatment statistically. Mycorrhiza application also significantly increased plant diameter, plant dry weight and phosphor uptake by plant. The highest phosphorus uptakes by plants were determined in 200 mg P2O5/kg treatments as 88.8 mg P/pot with mycorrhiza and 83.1 mg P/pot without mycorrhiza application. In the control at 0 doses of phosphorus with mycorrhiza treatment, phosphorus uptake (69.9 mg P/pot, edible weight (84.36 g, dry weight (8.64 g and leaf number (28 of lettuce were higher than that (47.7 mg P/pot, 59.33 g, 6.75 g and 20, respectively in the control without mycorrhiza application. It was determined that mycorrhiza had positive effect on growth criteria and phosphorus nutrition by lettuce plant, and this effect decreased at higher phosphorus application rates.

Environmental Phosphorus Recovery Based on Molecular Bioscavengers

DEFF Research Database (Denmark)

Gruber, Mathias Felix

Phosphorus is a ubiquitous element of all known life and as such it is found throughout numerous key molecules related to various cellular functions. The supply of phosphorus is tightly linked to global food security, since phosphorus is used to produce agricultural fertilizers, without which...... it would not be possible to feed the world population. Sadly, the current supply of phosphorus is based on the gradual depletion of limited fossil reserves, and some estimates predict that within 15-25 years we will consume more phosphorus than we can produce. There is therefore a strong international...... pressure to develop sustainable phosphorus practices as well as new technologies for phosphorus recovery. Nature has spent billions of years refining proteins that interact with phosphates. This has inspired the present work where the overall ambitions are: to facilitate the development of a recovery...

Characteristics of organic phosphorus fractions in different trophic sediments of lakes from the middle and lower reaches of Yangtze River region and Southwestern Plateau, China

International Nuclear Information System (INIS)

Zhang Runyu; Wu Fengchang; Liu Congqiang; Fu Pingqing; Li Wen; Wang Liying; Liao Haiqing; Guo Jianyang

2008-01-01

In this study, the characteristics of organic phosphorus (P o ) fractions in sediments of six lakes from the middle and lower reaches of Yangtze River region and Southwestern China Plateau, China were investigated using a soil P o fractionation scheme, and the relationships between P o , inorganic phosphorus (P i ) and pollution status were also discussed. The results show that the rank order of P o fractions was: residual P o > HCl-P o > fulvic acid-P > humic acid-P > NaHCO 3 -P o , with their average relative proportion 8.7:4.6:3.2:2.1:1.0. P o fractions, especially nonlabile P o , were significantly correlated with organic matter, P o and NaOH-P i . Different distribution patterns of P fractions were observed in those two different regions. P o fractions in the heavily polluted sediments were higher than those in moderately and no polluted sediments, it is suggested that P o should be paid more attention in the lake eutrophication investigation. - Organic phosphorus fractions in sediments from 6 different trophic Chinese lakes were characterized using an improved fractionation scheme

CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

Energy Technology Data Exchange (ETDEWEB)

Turkulets, Yury [Micron Semiconductor Israel Ltd., Qiryat Gat 82109 (Israel); Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 8410501 (Israel); Silber, Amir; Ripp, Alexander; Sokolovsky, Mark [Micron Semiconductor Israel Ltd., Qiryat Gat 82109 (Israel); Shalish, Ilan, E-mail: shalish@bgu.ac.il [Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 8410501 (Israel)

2016-03-28

Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers of a typical 3D structure has been a challenge. We present a method for doping of buried polysilicon layers by solid phase diffusion. Using an underlying silicon oxide layer as a dopant source facilitates diffusion of dopants into the bottom side of the polysilicon layer. The polysilicon is grown on top of the oxide layer, after the latter has been doped by ion implantation. Post-growth heat treatment drives in the dopant from the oxide into the polysilicon. To model the process, we studied the diffusion of the two most common silicon dopants, boron (B) and phosphorus (P), using secondary ion mass spectroscopy profiles. Our results show that shallow concentration profiles can be achieved in a buried polysilicon layer using the proposed technique. We present a quantitative 3D model for the diffusion of B and P in polysilicon, which turns the proposed method into an engineerable technique.

Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

2005-01-01

We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

Science.gov (United States)

Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

2011-11-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Traps for phosphorus adsorption

International Nuclear Information System (INIS)

Montoya, Nawer D; Villegas, Wilson E; Rodriguez, Lino M; Taborda, Nelson; Montes de C, Consuelo

2001-01-01

Several AL 2 O 3 supported oxides such as: NiO, CuO, Co 2 O 3 BaO, CeO 2 and ZnO were investigated for phosphorus adsorption. Zno/y-Al 2 O 3 exhibited the highest phosphorus adsorption capacity. However, since it diminishes the activity of to the reaction mixture it should be located upstream of the NoX catalyst, i.e. 0,3% Pd-H-MOR, in order to protect it against p poisoning. The treatment procedure with citric acid was effective for the removal of more than 70% phosphorus from the adsorbent, ZnO/y-Al 2 O 3

Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

International Nuclear Information System (INIS)

Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

2003-01-01

Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

Phosphorus recycling from an unexplored source by polyphosphate accumulating microalgae and cyanobacteria – a step to phosphorus security in agriculture

Directory of Open Access Journals (Sweden)

Chandan eMukherjee

2015-12-01

Full Text Available Phosphorus (P, an essential element required for crop growth has no substitute. The global food security depends on phosphorus availability in soil for crop production. World phosphorus reserves are fast depleting and with an annual increase of 2.3% in phosphorus demand, the current reserves will be exhausted in coming 50-100 years. India and other Western countries are forced to import phosphorus fertilizers at high costs to meet their agricultural demands due to uneven distribution of phosphate rocks on earth. The present study from India, aims to draw attention to an unnoticed source of phosphorus being wasted as parboiled rice mill effluent and subsequent bio-recovery of the valuable element from this unconventional source. The research was conducted in West Bengal, India, a state with the highest number of parboiled rice mills where its effluent carries on an average ~40 mg/L of soluble phosphorus. Technology to recover and recycle this wastewater P in India in a simple, inexpensive mode is yet to be optimized. Our strategy to use microalgae, Chlorella sp. and cyanobacteria, Cyanobacterium sp., Lyngbya sp. and Anabaena sp. to sequester the excess phosphorus from the effluent as polyphosphate inclusions and its subsequent recycling as slow and moderate release phosphorus biofertilizers to aid plant growth, preventing phosphorus loss and pollution, is a contemporary venture to meet the need of the hour. These polyphosphate accumulating microorganisms play a dual role of remediation and recovery of phosphorus, preliminarily validated in laboratory scale.

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

Relative efficiency of different methods of phosphorus (32P) application on fertilizer phosphorus uptake by maize (zea may L.)

International Nuclear Information System (INIS)

Chaudhary, M.L.; Gupta, A.P.

1975-01-01

A green house study was conducted for comparing four methods of phosphorus application (broad cast, below the seed, one side and both sides of the seeds) at the rate of 60 ppm in sierozem soil of H issar (Haryana). Maize crop was planted in 50 cm. bottomless bitumin drums for 70 days i.e. upto tasseling stage. The plant samples were collected at jointing and tasseling stages of plant growth. The results revealed that the highest dry matter yield, total and fertilizer phosphorus uptake was observed when the phosphorus was applied below the seed, followed by both side application of phosphorus. The least yield, total and fertilizer phosphorus uptake were recorded when the phosphorus was broadcast at the time of sowing. (author)

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

Physically sound parameterization of incomplete ionization in aluminum-doped silicon

Directory of Open Access Journals (Sweden)

Heiko Steinkemper

2016-12-01

Full Text Available Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+ regions. Aluminum has a rather deep state in the band gap compared to boron or phosphorus, causing strong incomplete ionization. In this paper, we considerably improve our recent parameterization [Steinkemper et al., J. Appl. Phys. 117, 074504 (2015]. On the one hand, we found a fundamental criterion to further reduce the number of free parameters in our fitting procedure. And on the other hand, we address a mistake in the original publication of the incomplete ionization formalism in Altermatt et al., J. Appl. Phys. 100, 113715 (2006.

Contributions to total phosphorus intake: all sources considered.

Science.gov (United States)

Calvo, Mona S; Uribarri, Jaime

2013-01-01

High serum phosphorus is linked to poor health outcome and mortality in chronic kidney disease (CKD) patients before or after the initiation of dialysis. Dietary intake of phosphorus, a major determinant of serum phosphorus, seems to be systematically underestimated using the available software tools and generalized nutrient content databases. Several sources of dietary phosphorus including the addition of phosphorus ingredients in food processing, and phosphorus content of vitamin and mineral supplements and commonly used over-the-counter or prescription medications are not fully accounted for by the nutrient content databases and software programs in current clinical use or used in large population studies. In this review, we explore the many unknown sources of phosphorus in the food supply to identify all possible contributors to total phosphorus intake of Americans that have escaped inclusion in past intake estimates. Our goal is to help delineate areas for future interventions that will enable tighter control of dietary phosphorus intake, a critical factor to maintaining health and quality of life in CKD and dialysis patients. © 2012 Wiley Periodicals, Inc.

Influence of integrated phosphorus supply and plant growth ...

African Journals Online (AJOL)

To guarantee a sufficient phosphorus supply for plants, a rapid and permanent mobilization of phosphorus from the labile phosphorus fractions is necessary, because phosphorus concentrations in soil solution are generally low. Several plant growth-promoting rhizobacteria (PGPR) have shown potential to enhance ...

Size limit on the phosphorous doped silicon nanocrystals for dopant activation

Energy Technology Data Exchange (ETDEWEB)

Yang, P., E-mail: pengyuan.yang@surrey.ac.uk [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Gwilliam, R.M. [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Crowe, I.F.; Papachristodoulou, N.; Halsall, M.P. [Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Hylton, N.P. [Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom); Hulko, O.; Knights, A.P. [Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario (Canada); Shah, M.; Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

2013-07-15

We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si{sup +} into a 500 nm SiO{sub 2} film to an areal density of 8 × 10{sup 16} at/cm{sup 2}. Half of the samples were co-implanted with P{sup +} at 80 keV to 5 × 10{sup 15} at/cm{sup 2}. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation.

Thermal, dielectric studies on pure and amino acid ( L-glutamic acid, L-histidine, L-valine) doped KDP single crystals

Science.gov (United States)

Kumaresan, P.; Moorthy Babu, S.; Anbarasan, P. M.

2008-05-01

Amino acids ( L-glutamic acid, L-histidine, L-valine) doped potassium dihydrogen phospate crystals are grown by solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mol% to 10 mol%. The solubility data for all dopants concentration were determined. There is variation in pH value and hence, there is habit modification of the grown crystals were characterized with UV-VIS, FT-IR studies, SHG trace elements and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. UV-Visible spectra confirm the improvement in the transparency of these crystals on doping metal ions. FT-IR spectra reveal strong absorption band between 1400 and 1600 cm -1 for metal ion doped crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material and it also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

Science.gov (United States)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

Phosphorus determination by various substoichiometric methods

International Nuclear Information System (INIS)

Shigematsu, Toshio; Kudo, Kiyoshi

1981-01-01

Various substoichiometric methods have been classified from a view point of the substoichiometric separation. Based upon the substoichiometric separation, phosphorus was determined substoichiometrically by a direct method, a method of carrier amount variation and a comparison method for the irradiated sample. The direct method was applied to the determination of phosphorus in orchard leaves (SRM-1571). The analytical value was 0.23 +- 0.01%. Phosphorus in orchard leaves and spinach (SRM-1570) was determined by an ordinary method which devided the sample into equal parts in the method of carrier amount variation. Analytical values of orchard leaves and spinach were 0.22 +- 0.02% and 0.56 +- 0.04%, respectively. Moreover, a new modification of the method of carrier amount variation was studied by the use of various standard samples such as red phosphorus, spinach and orchard leaves. These standard samples were also employed for the determination of phosphorus in orchard leaves and 0.21 +- 0.01% was obtained. All these results are in good agreement with the value reported by NBS. The comparison method was applied to the determination of phosphorus in a semiconductor silicon single crystal. As a result of the correction of 32 P activity induced by the secondary nuclear reaction of 30 Si, 7.9 ppb and 3.1 ppb were obtained for the phosphorus concentrations in the single crystal silicon. (author)

Visualizing alternative phosphorus scenarios for future food security

Directory of Open Access Journals (Sweden)

Tina-Simone Neset

2016-10-01

Full Text Available The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialogue on the technical, behavioral and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real-time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialogue to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1 the potential of full recovery of human excreta, (2 the challenge of a potential increase in non-food phosphorus demand, (3 the potential of a decreased animal product consumption, and (4 the potential decrease in phosphorus demand from increased efficiency

Visualizing Alternative Phosphorus Scenarios for Future Food Security.

Science.gov (United States)

Neset, Tina-Simone; Cordell, Dana; Mohr, Steve; VanRiper, Froggi; White, Stuart

2016-01-01

The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure, and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialog on the technical, behavioral, and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialog to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1) the potential of full recovery of human excreta, (2) the challenge of a potential increase in non-food phosphorus demand, (3) the potential of decreased animal product consumption, and (4) the potential decrease in phosphorus demand from increased efficiency and yield gains in

Phosphorus K4 Crystal: A New Stable Allotrope

OpenAIRE

Jie Liu; Shunhong Zhang; Yaguang Guo; Qian Wang

2016-01-01

The intriguing properties of phosphorene motivate scientists to further explore the structures and properties of phosphorus materials. Here, we report a new allotrope named K 4 phosphorus composed of three-coordinated phosphorus atoms in non-layered structure which is not only dynamically and mechanically stable, but also possesses thermal stability comparable to that of the orthorhombic black phosphorus (A17). Due to its unique configuration, K 4 phosphorus exhibits exceptional properties: i...

High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

Science.gov (United States)

Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

2015-08-15

We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

Biochar produced from biosolids using a single-mode microwave: Characterisation and its potential for phosphorus removal.

Science.gov (United States)

Antunes, Elsa; Schumann, James; Brodie, Graham; Jacob, Mohan V; Schneider, Philip A

2017-07-01

The amount of biosolids increases every year, and social and environmental concerns are also rising due to heavy metals and pathogen contamination. Even though biosolids are considered as a waste material, they could be used as a precursor in several applications, especially in agriculture due to the presence of essential nutrients. Microwave assisted pyrolysis (MWAP) is a promising technology to safely manage biosolids, while producing value-added products, such as biochar, that can be used to improve soil fertility. This study examined the impact of pyrolysis temperature between 300 °C and 800 °C on the chemical and physical properties of biochar obtained from biosolids via MWAP. Preliminary phosphorus adsorption tests were carried out with the biochar produced from biosolids. This research demonstrated that pyrolysis temperature affects biochar specific surface area, ash and volatiles content, but does not impact heavily on the pH, chemical composition and crystalline phases of the resultant biochar. Biochar yield decreases as the pyrolysis temperature increases. Phosphorus adsorption capacity of biochar was approximately around 15 mg/g of biochar. Biochar resulting from MWAP is a potential candidate for land application with an important role in water and nutrient retention, due to the high surface area. Copyright © 2017 Elsevier Ltd. All rights reserved.

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

Co-doping as a tool for tuning the optical properties of singlewalled carbon nanotubes: A first principles study

Science.gov (United States)

Sharma, Deepa; Jaggi, Neena

2017-07-01

This paper presents a first principles study on the effect of co-doping on various optical spectra of a zigzag single-walled carbon nanotube (SWCNT). Optical spectra of a pristine SWCNT, SWCNT co-doped with Aluminum (Al) & Phosphorus (P) and another one co-doped with Al, P and Nitrogen (N) have been calculated using density functional theory (DFT).The theory has been implemented using the Cambridge sequential total energy package (CASTEP) code available as a userfriendly module with the software 'Material Studio'. Polarized and unpolarized light as well as light through polycrystalline media have been considered. The dependence of various spectra on the status of incident light presents a clear evidence of anisotropicity in the optical properties. Analysis of the simulated spectra involves calculation and comparison of different optical properties like dielectric function, reflectivity, refractive index, conductivity and loss function for the pristine and co-doped SWCNTs. Noticeable variations are observed in the optical properties on simultaneously doping the SWCNT with Al and P and then further introducing N atom into the structure so that it can be concluded that co-doping (simultaneous doping with different combinations of dopants) can be evolved as a novel and effective tool for tailoring the optical properties of SWCNTs as per the requirements while designing an optical device. It will prove to be highly significant for effective designing of SWCNT based sensitive optical devices for a variety of technological applications.

Yellow phosphorus-induced Brugada phenocopy.

Science.gov (United States)

Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

Science.gov (United States)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Electrophysical properties of silicon doped by palladium-103 isotope

International Nuclear Information System (INIS)

Makhkamov, Sh.; Tursunov, N.A.; Sattiev, A.R.; Normurodov, A.B.

2007-01-01

The work is devoted to study of radiation physical processes taking place in Si under nuclear transmutation, Identification and determination of defects microstructure and homogeneities and their distribution, study of interactions of nuclear-transformed phosphorus isotopes with palladium atoms, and its effect on crystal properties. For examination monocrystalline silicon of n- and p-type conductivity with specific resistance from 1 to 40 Ω·cm, dislocation density ∼10 4 cm -2 and oxygen content ∼10 17 cm -3 has been applied. Doping of silicon plates by examined admixture has been carried out by thermal diffusion method within temperature range 1000-1250 deg. C for 0.5- 5 h. Irradiation of doped silicon was conducted by reactor neutron fluences 5·10 18 - 5·10 19 cm -2 with subsequent annealing at 1000 deg. C for 30 min. Efficiency of mixture centers formation in silicon, effect of concentration of formed mixture-defect centers on electro-physical, photoelectric and recombination parameters of doped silicon and revealing of type and state of generated defects have been controlled by electric, volume and X-ray fluorescent methods. On the base of spectroscopic researches it is shown, that in silicon forbidden zone after Pd diffusion in DLTS spectra peaks related with acceptor (E c -0.18 and E v +0.34 eV) levels, and peak responsible for level E v +0.32 eV of donor character caused by palladium impurity. It is shown, that irradiation of doped silicon samples by neutrons lead to nuclear transmutation of 102 Pd, 104 Pd in 103 Pd isotopes in the crystal volume with following electron capture in stable isotope 103m Rh

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

International Nuclear Information System (INIS)

Saha, S.; Nagar, S.; Chakrabarti, S.

2014-01-01

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

High Capacity of Hard Carbon Anode in Na-Ion Batteries Unlocked by PO _x Doping

Energy Technology Data Exchange (ETDEWEB)

Li, Zhifei; Ma, Lu; Surta, Todd Wesley; Bommier, Clement; Jian, Zelang; Xing, Zhenyu; Stickle, William F.; Dolgos, Michelle; Amine, Khalil; Lu, Jun; Wu, Tianpin; Ji, Xiulei

2016-08-12

The capacity of hard carbon anodes in Na-ion batteries 2.5 rarely reaches values beyond 300 mAh/g. We report that doping POx into local structures of hard carbon increases its reversible capacity from 283 to 359 mAh/g. We confirm that the doped POx is redox inactive by X-ray adsorption near edge structure measurements, thus not contributing to the higher capacity. We observe two significant changes of hard carbon's local structures caused by doping. First, the (002) d-spacing inside the turbostratic nanodomains is increased, revealed by both laboratory and synchrotron X-ray diffraction. Second, doping turns turbostratic nanodomains more defective along ab planes, indicated by neutron total scattering and the associated pair distribution function studies. The local structural changes of hard carbon are correlated to the higher capacity, where both the plateau and slope regions in the potential profiles are enhanced. Our study demonstrates that Na-ion storage in hard carbon heavily depends on carbon local structures, where such structures, despite being disordered, can be tuned toward unusually high capacities.

Explosive phenomena in heavily irradiated NaCl

NARCIS (Netherlands)

denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

1997-01-01

In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

Determination of phosphorus using derivative neutron activation

International Nuclear Information System (INIS)

Scindia, Y.M.; Nair, A.G.C.; Reddy, A.V.R.; Manohar, S.B.

2002-01-01

For the determination of phosphorus in different matrices, the derivative neutron activation analysis is especially applicable to aqueous samples, since the conventional neutron activation analysis is not useful for the determination of phosphorus. Phosphorus when reacted with ammonium molybdate 4 hydrate and ammonium metavanadate forms molybdo vanado phosphoric acid. This complex is preconcentrated by extracting into methyl isobutyl ketone. The organic phase containing the molybdo vanado phosphoric acid is neutron activated and the phosphorus is determined through the activation product of 52 V. Preparation of this complex, its stoichiometry, application to trace level determination of phosphorus and improved detection limit are discussed. This method was applied for the analysis of industrial effluent samples. (author)

Guiding phosphorus stewardship for multiple ecosystem services

Science.gov (United States)

Phosphorus is vital to agricultural production and water quality regulation. While the role of phosphorus in agriculture and water quality has been studied for decades, the benefits of sustainable phosphorus use and management for society due to its downstream impacts on multiple ecosystem services...

Impacts of anthropic pressures on soil phosphorus availability, concentration, and phosphorus forms in sediments in a Southern Brazilian watershed

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, Joao Batista Rossetto; Rheinheimer dos Santos, Danilo; Goncalves, Celso Santos; Copetti, Andre Carlos Cruz [Dept. de Solos, Univ. Federal de Santa Maria, Centro de Ciencias Rurais, Santa Maria, RS (Brazil); Bortoluzzi, Edson Campanhola [Faculdade de Agronomia e Medicina Veterinaria da Univ. de Passo Fundo, RS (Brazil); Tessier, Daniel [Inst. National de la Recherche Agronomique, Versailles (France)

2010-04-15

Purpose: The transfer of soil sediments and phosphorus from terrestrial to aquatic systems is a common process in agricultural lands. The aims of this paper are to quantify the soil phosphorus availability and to characterize phosphorus forms in soil sediments as contaminant agents of waters as a function of anthropic pressures. Materials and methods On three subwatersheds with different anthropic pressure, water and sediment samples were collected automatically in upstream and downstream discharge points in six rainfall events during the tobacco growing season. Phosphorus desorption capacity from soil sediments was estimated by successive extractions with anion exchange resins. First-order kinetic models were adjusted to desorption curves for estimating potentially bioavailable particulate phosphorus, desorption rate constant, and bioavailable particulate phosphorus. Results and discussion The amount of bioavailable particulate phosphorus was directly correlated with the iron oxide content. The value of desorption rate constant was directly related with the total organic carbon and inversely with the iron oxide contents. Phosphate ions were released to solution, on average, twice as rapidly from sediments collected in subwatersheds with low anthropic activity than from those ones of highly anthropic subwatersheds. Anthropic pressure on watershed can engender high sediment discharge, but these solid particles seem to present low phosphorus-releasing capacity to water during transport due to the evidenced high affinity between phosphorus and iron oxide from sediments. Conclusions Anthropic pressure was related with sediment concentration and phosphorus release to aquatic systems. While natural vegetation along streams plays a role on soil and water depuration, it is unable to eliminate the phosphorus inputs intrinsic to the agricultural-intensive systems. Recommendations and perspectives The contamination of water in watershed by phosphates is facilitated by the

Phosphorus-containing macrocyclic compounds: synthesis and properties

International Nuclear Information System (INIS)

Knyazeva, I R; Burilov, Alexander R; Pudovik, Michael A; Habicher, Wolf D

2013-01-01

Main trends in the development of methods for the synthesis of phosphorus-containing macrocyclic compounds in the past 15 years are considered. Emphasis is given to reactions producing macrocyclic structures with the participation of a phosphorus atom and other functional groups involved in organophosphorus molecules and to modifications of macrocycles by phosphorus compounds in different valence states. Possibilities of the practical application of phosphorus-containing macrocyclic compounds in difference areas of science and engineering are discussed. The bibliography includes 205 references.

Anthropogenic phosphorus flow analysis of Hefei City, China

International Nuclear Information System (INIS)

Li Sisi; Yuan Zengwei; Bi Jun; Wu Huijun

2010-01-01

The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns.

Biological phosphorus uptake under anoxic and aerobic conditions

DEFF Research Database (Denmark)

Kerrn-Jespersen, Jens Peter; Henze, Mogens

1993-01-01

Biological phosphorus removal was investigated under anoxic and aerobic conditions. Tests were made to establish whether phosphorus accumulating bacteria can take up phosphate under anoxic conditions and thus utilise nitrate as oxidant. Furthermore, it was tested how the amount of organic matter...... as oxidant. The phosphorus uptake was more rapid under aerobic conditions than under anoxic conditions. The explanation of this is that all phosphorus accumulating bacteria take up phosphate under aerobic conditions, whereas only part of the phosphorus accumulating bacteria take up phosphate under anoxic...

Phosphorus kinetics in ovine fed with different phosphorus sources, using the isotopic dilution technique

International Nuclear Information System (INIS)

Vitti, D.M.S.S.; Abdalla, A.L.; Meirelles, C.F.

1992-01-01

Phosphorus kinetics in fluids and tissues of sheep was studied. Sixteen castrated sheep were kept in metabolism cages, receiving a semipuried diet containing as phosphorus sources dicalcium phosphate (BIC), monoammonium phosphate (MAP), superphosphate (SPT) and Tapita phosphate (TAP) 200 μCi P-32 was intravenously injected in each sheep and blood and feces were collected for eight days. From the specific activities in feces and plasma the endogenous phosphorus and the absorption coefficient were calculated. plasma P-32 half-life was determined. Nine days after injection the animals were killed and liver, kidney and muscle and bone samples were collected. P-32 retention and specific activities in tissues were determined. Endogenous phosphorus and absorption coefficient values were 54.44 ± 15.31 mh/kg live weight and 0.60; 47.98 ± 12.44 and 0.56; 39.70 ± 7.29 and 0.49; 59.11 ± 17.12 and 0.58 respectively bor BIC, MAP, TAP and SPT. P-32 retention by tissues was 0.29 ± 0.09; 0.27 ± 0.06; 0.16 ± 0.04 and 0.08 ± 0.03 dose/g fresh matter, respectively for bone, liver, kidney and muscle. It was concluded that animals which received TAP showed differences in absorption, distribution and P-32 retention by fluids and tissues. Phosphorus availability was lower for this source. (author)

Estimate of dietary phosphorus intake using 24-h urine collection

Science.gov (United States)

Morimoto, Yuuka; Sakuma, Masae; Ohta, Hiroyuki; Suzuki, Akitsu; Matsushita, Asami; Umeda, Minako; Ishikawa, Makoto; Taketani, Yutaka; Takeda, Eiji; Arai, Hidekazu

2014-01-01

Increases in serum phosphorus levels and dietary phosphorus intake induces vascular calcification, arterial sclerosis and cardiovascular diseases. Limiting phosphorus intake is advisable, however, no assessment methods are capable of estimating dietary phosphorus intake. We hypothesized that urinary phosphorus excretion can be translated into estimation of dietary phosphorus intake, and we evaluated whether a 24-h urine collection method could estimate dietary phosphorus intake. Thirty two healthy subjects were recruited for this study. Subjects collected urine samples over 24 h and weighed dietary records. We calculated dietary protein intake and phosphorus intake from dietary records and urine collection, and investigated associations between the two methods in estimating protein and phosphorus intake. Significant positive correlations were observed between dietary records and UC for protein and phosphorus intake. The average intakes determined from dietary records were significantly higher than from urine collection for both protein and phosphorus. There was a significant positive correlation between both the phosphorus and protein difference in dietary records and urine collection. The phosphorus-protein ratio in urine collection was significantly higher than in dietary records. Our data indicated that the 24-h urine collection method can estimate the amount of dietary phosphorus intake, and the results were superior to estimation by weighed dietary record. PMID:25120281

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

International Nuclear Information System (INIS)

Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

2011-01-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Phosphorus run-off assessment in a watershed.

Science.gov (United States)

Chebud, Yirgalem; Naja, Ghinwa M; Rivero, Rosanna

2011-01-01

The Watershed Assessment Model was used to simulate the runoff volume, peak flows, and non-point source phosphorus loadings from the 5870 km(2) Lake Okeechobee watershed as a case study. The results were compared to on-site monitoring to verify the accuracy of the method and to estimate the observed/simulated error. In 2008, the total simulated phosphorus contribution was 9634, 6524 and 3908 kg (P) y(-1) from sod farms, citrus farms and row crop farmlands, respectively. Although the dairies represent less than 1% of the total area of Kissimmee basin, the simulated P load from the dairies (9283 kg (P) y(-1) in 2008) made up 5.4% of the total P load during 2008. On average, the modeled P yield rates from dairies, sod farms and row crop farmlands are 3.85, 2.01 and 0.86 kg (P) ha(-1) y(-1), respectively. The maximum sediment simulated phosphorus yield rate is about 2 kg (P) ha(-1) and the particulate simulated phosphorus contribution from urban, improved pastures and dairies to the total phosphorus load was estimated at 9%, 3.5%, and 1%, respectively. Land parcels with P oversaturated soil as well as the land parcels with high phosphorus assimilation and high total phosphorus contribution were located. The most critical sub-basin was identified for eventual targeting by enforced agricultural best management practices. Phosphorus load, including stream assimilation, incoming to Lake Okeechobee from two selected dairies was also determined.

Sustainable use of phosphorus: a finite resource.

Science.gov (United States)

Scholz, Roland W; Ulrich, Andrea E; Eilittä, Marjatta; Roy, Amit

2013-09-01

Phosphorus is an essential element of life and of the modern agricultural system. Today, science, policy, agro-industry and other stakeholder groups are increasingly concerned about the sustainable use of this resource, given the dissipative nature of phosphorus and difficulties in assessing, evaluating, and coping with phosphorus pollution in aquatic and terrestrial systems. We argue that predictions about a forthcoming peak, followed by a quick reduction (i.e., physical phosphate rock scarcity) are unreasoned and stress that access to phosphorus (economic scarcity) is already, and may increasingly become critical, in particular for smallholders farmers in different parts of the world. The paper elaborates on the design, development, goals and cutting-edge contributions of a global transdisciplinary process (i.e. mutual learning between science and society including multiple stakeholders) on the understanding of potential contributions and risks related to the current mode of using phosphorus on multiple scales (Global TraPs). While taking a global and comprehensive view on the whole phosphorus-supply chain, Global TraPs organizes and integrates multiple transdisciplinary case studies to better answer questions which inform sustainable future phosphorus use. Its major goals are to contribute to four issues central to sustainable resource management: i) long-term management of biogeochemical cycles, in particular the challenge of closing the phosphorus cycle, ii) achieving food security, iii) avoiding environmental pollution and iv) sustainability learning on a global level by transdisciplinary processes. Copyright © 2013 Elsevier B.V. All rights reserved.

Towards a closed phosphorus cycle

NARCIS (Netherlands)

Keyzer, M.A.

2010-01-01

Summary: This paper stresses the need to address upcoming scarcity of phosphorus, a mineral nutrient that is essential for all life on Earth. Agricultural crops obtain phosphorus from the pool in the soil that can be replenished by recycling of organic material, or by application of inorganic

Anthropogenic phosphorus flow analysis of Hefei City, China.

Science.gov (United States)

Li, Sisi; Yuan, Zengwei; Bi, Jun; Wu, Huijun

2010-11-01

The substance flow analysis (SFA) method was employed to examine phosphorus flow and its connection to water pollution in the city of Hefei, China, in 2008. As human activity is the driving force of phosphorus flux from the environment to the economy, the study provides a conceptual framework for analyzing an anthropogenic phosphorus cycle that includes four stages: extraction, fabrication and manufacturing, use, and waste management. Estimates of phosphorus flow were based on existing data as well as field research, expert advice, local accounting systems, and literature. The total phosphorus input into Hefei in 2008 reached 7810 tons, mainly as phosphate ore, chemical fertilizer, pesticides, crops and animal products. Approximately 33% of the total phosphorus input left the area, and nearly 20% of that amount was discharged as waste to surface water. Effluent containing excessive fertilizer from farming operations plays an important role in phosphorus overloads onto surface water; the other major emission source is sewage discharge. We also provide suggestions for reducing phosphorus emissions, for example reducing fertilizer use, recycling farming residues, and changing human consumption patterns. Crown Copyright © 2010. Published by Elsevier B.V. All rights reserved.

Development of efficient, radiation-insensitive GaAs:Zn LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1977-01-01

Although amphoterically Si doped GaAs LEDs are commercially popular because of their high light output, they are extremely sensitive to irradiation. Therefore, it would be desirable to have a viable alternative available for radiation environment applications. In this work it is shown that by increasing the hole concentration in the active region of nonamphoterically doped GaAs LEDs, one can simultaneously achieve high light output and low radiation sensitivity. Experimental results indicate that the minority carrier lifetime is smaller in more heavily doped devices so that the lifetime-damage constant, tau/sub o/K, is also smaller. Hence, the heavily doped devices should have greater radiation hardness. Neutron-induced light output degradation data as a function of hole concentration confirm this conclusion. The results also show that the pre-irradiation light output is greatest in the heavily doped LEDs. The accompanying decrease of tau/sub o/ in the heavily doped devices indicates that the total minority carrier lifetime is at least partially controlled by the radiative lifetime; a requirement for simultaneously achieving radiation hardness and high initial light output. Finally, an experimental comparison with amphoterically Si doped LEDs shows that the heavily doped devices are superior for neutron fluences greater than 2 x 10 12 n/cm 2

Back wall solar cell

Science.gov (United States)

Brandhorst, H. W., Jr. (Inventor)

1978-01-01

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Transformation of apatite phosphorus and non-apatite inorganic phosphorus during incineration of sewage sludge.

Science.gov (United States)

Li, Rundong; Zhang, Ziheng; Li, Yanlong; Teng, Wenchao; Wang, Weiyun; Yang, Tianhua

2015-12-01

The recovery of phosphorus from incinerated sewage sludge ash (SSA) is assumed to be economical. Transformation from non-apatite inorganic phosphorus (NAIP) to apatite phosphorus (AP), which has a higher bioavailability and more extensive industrial applications, was studied at 750-950°C by sewage sludge incineration and model compound incineration with a calcium oxide (CaO) additive. Thermogravimetric differential scanning calorimetry analysis and X-ray diffraction measurements were used to analyze the reactions between NAIP with CaO and crystallized phases in SSA. High temperatures stimulated the volatilization of NAIP instead of AP. Sewage sludge incineration with CaO transformed NAIP into AP, and the percentage of AP from the total phosphorus reached 99% at 950°C. Aluminum phosphate reacted with CaO, forming Ca2P2O7 and Ca3(PO4)2 at 750-950°C. Reactions between iron phosphate and CaO occurred at lower temperatures, forming Ca(PO3)2 before reaching 850°C. Copyright © 2015 Elsevier Ltd. All rights reserved.

[Research progress on phosphorus budgets and regulations in reservoirs].

Science.gov (United States)

Shen, Xiao; Li, Xu; Zhang, Wang-shou

2014-12-01

Phosphorus is an important limiting factor of water eutrophication. A clear understanding of its budget and regulated method is fundamental for reservoir ecological health. In order to pro- mote systematic research further and improve phosphorus regulation system, the budget balance of reservoir phosphorus and its influencing factors were concluded, as well as conventional regulation and control measures. In general, the main phosphorus sources of reservoirs include upstream input, overland runoff, industrial and domestic wastewater, aquaculture, atmospheric deposition and sediment release. Upstream input is the largest phosphorus source among them. The principal output path of phosphorus is the flood discharge, the emission load of which is mainly influenced by drainage patterns. In addition, biological harvest also can export a fraction of phosphorus. There are some factors affecting the reservoir phosphorus balance, including reservoirs' function, hydrological conditions, physical and chemical properties of water, etc. Therefore, the phosphorus budgets of different reservoirs vary greatly, according to different seasons and regions. In order to reduce the phosphorus loading in reservoirs, some methods are carried out, including constructed wetlands, prefix reservoir, sediment dredging, biomanipulation, etc. Different methods need to be chosen and combined according to different reservoirs' characteristics and water quality management goals. Thus, in the future research, it is reasonable to highlight reservoir ecological characteristics and proceed to a complete and systematic analysis of the inherent complexity of phosphorus budget and its impact factors for the reservoirs' management. Besides, the interaction between phosphorus budget and other nutrients in reservoirs also needs to be conducted. It is fundamental to reduce the reservoirs' phosphorus loading to establish a scientific and improved management system based on those researches.

The New Nordic Diet: phosphorus content and absorption.

Science.gov (United States)

Salomo, Louise; Poulsen, Sanne K; Rix, Marianne; Kamper, Anne-Lise; Larsen, Thomas M; Astrup, Arne

2016-04-01

High phosphorus content in the diet may have adverse effect on cardiovascular health. We investigated whether the New Nordic Diet (NND), based mainly on local, organic and less processed food and large amounts of fruit, vegetables, wholegrain and fish, versus an Average Danish Diet (ADD) would reduce the phosphorus load due to less phosphorus-containing food additives, animal protein and more plant-based proteins. Phosphorus and creatinine were measured in plasma and urine at baseline, week 12 and week 26 in 132 centrally obese subjects with normal renal function as part of a post hoc analysis of data acquired from a 26-week controlled trial. We used the fractional phosphorus excretion as a measurement of phosphorus absorption. Mean baseline fractional phosphorus excretion was 20.9 ± 6.6 % in the NND group (n = 82) and 20.8 ± 5.5 % in the ADD group (n = 50) and was decreased by 2.8 ± 5.1 and 3.1 ± 5.4 %, respectively, (p = 0.6) at week 26. At week 26, the mean change in plasma phosphorus was 0.04 ± 0.12 mmol/L in the NND group and -0.03 ± 0.13 mmol/L in the ADD group (p = 0.001). Mean baseline phosphorus intake was 1950 ± 16 mg/10 MJ in the NND group and 1968 ± 22 mg/10 MJ in the ADD group and decreased less in the NND compared to the ADD (67 ± 36 mg/10 MJ and -266 ± 45 mg/day, respectively, p food concept beneficial regarding phosphorus absorption.

Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

International Nuclear Information System (INIS)

Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

2009-01-01

Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

Adaptive Evolution of Phosphorus Metabolism in Prochlorococcus

DEFF Research Database (Denmark)

Casey, John R; Mardinoglu, Adil; Nielsen, Jens

2016-01-01

Inorganic phosphorus is scarce in the eastern Mediterranean Sea, where the high-light-adapted ecotype HLI of the marine picocyanobacterium Prochlorococcus marinus thrives. Physiological and regulatory control of phosphorus acquisition and partitioning has been observed in HLI both in culture...... and in the field; however, the optimization of phosphorus metabolism and associated gains for its phosphorus-limited-growth (PLG) phenotype have not been studied. Here, we reconstructed a genome-scale metabolic network of the HLI axenic strain MED4 (iJC568), consisting of 568 metabolic genes in relation to 794...... through drastic depletion of phosphorus-containing biomass components but also through network-wide reductions in phosphate-reaction participation and the loss of a key enzyme, succinate dehydrogenase. These alterations occur despite the stringency of having relatively few pathway redundancies...

Phosphorus effect on fracture properties of structural steels

International Nuclear Information System (INIS)

Goritskij, V.M.; Guseva, I.A.

1985-01-01

Phosphorus content is studied for its effect on fracture peculiarities and fracture toughness. It is supposed that the phosphorus effect on ductile fractures is associated with phosphorus segregation on the ferrite-carbide interfaces. An increase of the phosphorus content in heat-treated 10KhSND steel from 0.020 up to 0.043 wt.% results in a decrease of the pore size and asub(p) value. Close linear correlation is established between critical temperature of embrittlement T 50 and √ asub(p) or √ KC values for a number of structural steels with different phosphorus content

Sustainable Phosphorus Chemistry: A Silylphosphide Synthon for the Generation of Value-Added Phosphorus Chemicals.

Science.gov (United States)

Slootweg, J Chris

2018-05-07

Avoiding white phosphorus: Cummins and Geeson have recently described the conversion of phosphoric acid into the novel bis(trichlorosilyl)phosphide anion, which serves as a key intermediate in the synthesis of organophosphines, hexafluorophosphate, and phosphine gas in a reaction sequence that does not rely on white phosphorus. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric Conductivity of Phosphorus Nanowires

International Nuclear Information System (INIS)

Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

2009-01-01

We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

Production of carrier-free phosphorus-33 at MURR

International Nuclear Information System (INIS)

Jia, W.; Ketring, A.R.; Schuh, J.; Lanigan, J.; Ma, D.; Manson, L.; Chanley, D.

1996-01-01

Phosphorus-33, a new radionuclide used in medical and biochemical research, is produced at the University of Missouri research reactor (MURR) in production quantities. Phosphorus-33 has a longer shelf life and lower dose rates than phosphorus-32. Recently, the MURR and New England Nuclear (NEN) jointly developed a method to recover carrier-free phosphorus-33 as well as the enriched sulfur target using a sublimation technique at reduced pressure

Prevalence of phosphorus containing food additives in grocery stores

Directory of Open Access Journals (Sweden)

Janeen B. Leon

2012-06-01

In conclusion, phosphorus additives are commonly present in groceries and contribute significantly to the phosphorus content of foods. Moreover, phosphorus additive foods are less costly than additive-free foods. As a result, phosphorus additives may be an important contributor to hyperphosphatemia among persons with chronic kidney disease

First-principles study of the effects of Silicon doping on the Schottky barrier of TiSi2/Si interfaces

Science.gov (United States)

Wang, Han; Silva, Eduardo; West, Damien; Sun, Yiyang; Restrepo, Oscar; Zhang, Shengbai; Kota, Murali

As scaling of semiconductor devices is pursued in order to improve power efficiency, quantum effects due to the reduced dimensions on devices have become dominant factors in power, performance, and area scaling. In particular, source/drain contact resistance has become a limiting factor in the overall device power efficiency and performance. As a consequence, techniques such as heavy doping of source and drain have been explored to reduce the contact resistance, thereby shrinking the width of depletion region and lowering the Schottky barrier height. In this work, we study the relation between doping in Silicon and the Schottky barrier of a TiSi2/Si interface with first-principles calculation. Virtual Crystal Approximation (VCA) is used to calculate the average potential of the interface with varying doping concentration, while the I-V curve for the corresponding interface is calculated with a generalized one-dimensional transfer matrix method. The relation between substitutional and interstitial Boron and Phosphorus dopant near the interface, and their effect on tuning the Schottky barrier is studied. These studies provide insight to the type of doping and the effect of dopant segregation to optimize metal-semiconductor interface resistance.

The Adequacy of Phosphorus Binder Prescriptions Among American Hemodialysis Patients

Science.gov (United States)

Huml, Anne M.; Sullivan, Catherine M.; Leon, Janeen B.; Sehgal, Ashwini R.

2013-01-01

Because hemodialysis treatment has a limited ability to remove phosphorus, dialysis patients must restrict dietary phosphorus intake and use phosphorus binding medication. Among patients with restricted dietary phosphorus intake (1000 mg/d), phosphorus binders must bind about 250 mg of excess phosphorus per day and among patients with more typical phosphorus intake (1500 mg/d), binders must bind about 750 mg per day. To determine the phosphorus binding capacity of binder prescriptions among American hemodialysis patients, we undertook a cross-sectional study of a random sample of in-center chronic hemodialysis patients. We obtained data for one randomly selected patient from 244 facilities nationwide. About one-third of patients had hyperphosphatemia (serum phosphorus level > 5.5 mg/dL). Among the 224 patients prescribed binders, the mean phosphorus binding capacity was 256 mg/d (SD 143). 59% of prescriptions had insufficient binding capacity for restricted dietary phosphorus intake, and 100% had insufficient binding capacity for typical dietary phosphorus intake. Patients using two binders had a higher binding capacity than patients using one binder (451 vs. 236 mg/d, p phosphorus balance. Use of two binders results in higher binder capacity. Further work is needed to understand the impact of binder prescriptions on mineral balance and metabolism and to determine the value of substantially increasing binder prescriptions. PMID:23013171

Preliminary analysis of phosphorus flow in Hue Citadel.

Science.gov (United States)

Anh, T N Q; Harada, H; Fujii, S; Anh, P N; Lieu, P K; Tanaka, S

2016-01-01

Characteristics of waste and wastewater management can affect material flows. Our research investigates the management of waste and wastewater in urban areas of developing countries and its effects on phosphorus flow based on a case study in Hue Citadel, Hue, Vietnam. One hundred households were interviewed to gain insight into domestic waste and wastewater management together with secondary data collection. Next, a phosphorus flow model was developed to quantify the phosphorus input and output in the area. The results showed that almost all wastewater generated in Hue Citadel was eventually discharged into water bodies and to the ground/groundwater. This led to most of the phosphorus output flowing into water bodies (41.2 kg P/(ha year)) and ground/groundwater (25.3 kg P/(ha year)). Sewage from the sewer system was the largest source of phosphorus loading into water bodies, while effluent from on-site sanitation systems was responsible for a major portion of phosphorus into the ground/groundwater. This elevated phosphorus loading is a serious issue in considering surface water and groundwater protection.

Isotopic techniques to study phosphorus cycling in soils

International Nuclear Information System (INIS)

Manjaiah, K.M.; Sreenivasa Chari, M.; Sachdev, P.; Sachdev, M.S.

2008-01-01

A sound understanding of phosphorus cycling in soil system is essential in order to manage this system in a sustainable manner. Phosphorus transformations are characterized by physico-chemical (sorption-desorption) and biological processes . The transformation rates need to be taken into account while developing nutrient management strategies for economical and sustainable production. One of the important tools and the method gaining popularity for determining the gross transformation rates of nutrients in the soil is the isotopic dilution technique. The major processes in the soil-plant system which determine the distribution and bioavailability of phosphorus in various inorganic and organic soil components consist of: (1) the dissolution of soil mineral phosphates, (2) retention of phosphorus by inorganic soil constituents, (3) decomposition of organic phosphorus contained in plant, animal and microbial detritus and (4) Immobilization of phosphorus via the soil microbial biomass and plan uptake

Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

DEFF Research Database (Denmark)

Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

1983-01-01

of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

Thermal, Dielectric Studies on Pure and Amino Acid L-Glutamic Acid, L-Histidine L-Valine Doped Potassium Dihydrogen Phosphate Single Crystals

Science.gov (United States)

Kumaresan, P.; Babu, S. Moorthy; Anbarasan, P. M.

Amino acids (L-Glutamic acid, L-Histidine, L-Valine) doped potassium dihydrogen phosphate crystals were grown by the solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mole % to 10 mole %. The solubility data for all dopant concentrations were determined. The variation in pH and the corresponding habit modification of the grown crystals were characterized with UV - VIS, FT-IR and SHG trace elements, and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

Energy Technology Data Exchange (ETDEWEB)

Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

1997-03-01

Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

Performance of fertigation technique for phosphorus application in cotton

Directory of Open Access Journals (Sweden)

M. Aslam

2009-05-01

Full Text Available Low native soil phosphorus availability coupled with poor utilization of added phosphorus is one of the major constraints limiting the productivity of the crops. With a view of addressing this issue, field studies were conducted to compare the relative efficacy of broadcast and fertigation techniques for phosphorus application during 2005-2006 using cotton as a test crop. Two methods of phosphorus application i.e. broadcast and fertigation were evaluated using five levels of P2O5 (0, 30, 45, 60 and 75 kg P2O5 ha -1. Fertigation showed an edge over broadcast method at all levels of phosphorus application. The highest seed cotton yield was recorded with 75 kg P2O5 ha-1. Fertilizer phosphorus applied at the rate of 60 kg ha-1 through fertigation produced 3.4 tons ha-1 of seed cotton yield, which was statistically identical to 3.3 tons recorded with 75 kg ha-1 of broadcast phosphorus. Agronomic performance of phosphorus was influenced considerably by either method of fertilizer application. The seed cotton yield per kg of fertigation phosphorus was 48% higher than the corresponding broadcast application. The results of these studies showed that fertigation was the most efficient method of phosphorus application compared with the conventional broadcast application of fertilizers.

Reaching ultra low phosphorus concentrations by filtration techniques

NARCIS (Netherlands)

Scherrenberg, S.M.

2011-01-01

This research deals with tertiary treatment techniques used for the removal of phosphorus from wastewater treatment plant (WWTP) effluent. The main objective of this research is to obtain ultra low total phosphorus (<0.15 mg total phosphorus/L) concentrations by coagulation, flocculation and

Determination of traces of phosphorus using isotope exchange

International Nuclear Information System (INIS)

Zeman, A.; Kratzer, K.

1976-01-01

A simple and selective radioanalytical method for the determination of phosphorus (0.015 - 5 μg in a 5 ml sample), based on the heterogeneous isotope exchange, has been developed. The sample containing phosphorus is shaken in the presence of molybdate with a standard solution of tetraphenylarsonium molybdophosphate labelled with phosphorus-32 in 1-2 dicloroethan. From the distribution of the activity between the aqueous and organic phases the amount of phosphorus in the sample can be determined. (Authors)

Patient education for phosphorus management in chronic kidney disease

Directory of Open Access Journals (Sweden)

Kalantar-Zadeh K

2013-05-01

Full Text Available Kamyar Kalantar-ZadehHarold Simmons Center for Kidney Disease Research and Epidemiology, Division of Nephrology and Hypertension, University of California Irvine’s School of Medicine, Irvine, CA, USAObjectives: This review explores the challenges and solutions in educating patients with chronic kidney disease (CKD to lower serum phosphorus while avoiding protein insufficiency and hypercalcemia.Methods: A literature search including terms “hyperphosphatemia,” “patient education,” “food fatigue,” “hypercalcemia,” and “phosphorus–protein ratio” was undertaken using PubMed.Results: Hyperphosphatemia is a strong predictor of mortality in advanced CKD and is remediated via diet, phosphorus binders, and dialysis. Dietary counseling should encourage the consumption of foods with the least amount of inorganic or absorbable phosphorus, low phosphorus-to-protein ratios, and adequate protein content, and discourage excessive calcium intake in high-risk patients. Emerging educational initiatives include food labeling using a “traffic light” scheme, motivational interviewing techniques, and the Phosphate Education Program – whereby patients no longer have to memorize the phosphorus content of each individual food component, but only a “phosphorus unit” value for a limited number of food groups. Phosphorus binders are associated with a clear survival advantage in CKD patients, overcome the limitations associated with dietary phosphorus restriction, and permit a more flexible approach to achieving normalization of phosphorus levels.Conclusion: Patient education on phosphorus and calcium management can improve concordance and adherence and empower patients to collaborate actively for optimal control of mineral metabolism.Keywords: hyperphosphatemia, renal diet, phosphorus binders, educational programs, food fatigue, concordance

Watermelon-like iron nanoparticles: Cr doping effect on magnetism and magnetization interaction reversal

Energy Technology Data Exchange (ETDEWEB)

Kaur, Maninder; Dai, Qilin; Bowden, Mark E.; Engelhard, Mark H.; Wu, Yaqiao; Tang, Jinke; Qiang, You

2013-06-26

Chromium (Cr) forms a solid solution with iron (Fe) lattice when doped in core-shell iron -iron oxide nanocluster (NC) and shows a mixed phase of sigma (σ) FeCr and bcc Fe. The Cr dopant affects heavily the magnetization and magnetic reversal process, and causes the hysteresis loop to shrink near the zero field axis. Dramatic transformation happens from dipolar interaction (0 at. % Cr) to strong exchange interaction (8 at. % of Cr) is confirmed from the Henkel plot and delta M plot, and is explained by a water-melon model of core-shell NC system.

The phosphorus and the transition metals chemistry

International Nuclear Information System (INIS)

Mathey, F.

1988-01-01

The 1988 progress report, concerning the Polytechnic School unit (France), which studies the phosphorus and the transition metals chemistry, is presented. The laboratory activities are related to the following topics: the phosporus heterocyclic chemistry, the phosphorus-carbon double bonds chemistry, the new transition metals phosphorus compounds, the phosphonates and their uses. Some practical applications of homogeneous catalysis and new materials synthesis are investigated. The main results obtained are: the discovery of the tetra-phosphafulvalenes, the utilization of a new synthesis method of the phosphorus-carbon double bonds and the stabilization of the α-phosphonyled carbanions by the lithium diisopropylamidourea. The papers, the congress communications and the thesis are also shown [fr

Management of Natural and Added Dietary Phosphorus Burden in Kidney Disease

Science.gov (United States)

Cupisti, Adamasco; Kalantar-Zadeh, Kamyar

2018-01-01

Phosphorus retention occurs from higher dietary phosphorus intake relative to its renal excretion or dialysis removal. In the gastrointestinal tract the naturally existing organic phosphorus is only partially (~60%) absorbable; however, this absorption varies widely and is lower for plant-based phosphorus including phytate (80%). The latter phosphorus often remains unrecognized by patients and health care professionals, even though it is widely used in contemporary diets, in particular low-cost foods. In a non-enhanced mixed diet, the digestible phosphorus is closely correlated with total protein content, making protein-rich foods a main source of natural phosphorus. Phosphorus burden is more appropriately limited in pre-dialysis patients who are on low protein diets (~0.6 g/kg/day), whereas dialysis patients who require higher protein intake (~1.2 g/kg/day) are subject to a higher dietary phosphorus load. An effective and patient-friendly approach to reduce phosphorus intake without depriving patients of adequate proteins is to educate patients to avoid foods with high phosphorus relative to protein such as egg yolk and those with high amounts of phosphorus-based preservatives such as certain soft drinks and enhanced cheese and meat. Protein-rich foods should be prepared by boiling, which reduces phosphorus as well as sodium and potassium content, or by other types of cooking induced demineralization. The dose of phosphorus-binding therapy should be adjusted separately for the amount and absorbability of phosphorus in each meal. Dietician counselling to address the foregoing aspects of dietary phosphorus management is instrumental for achieving reduction of phosphorus load. PMID:23465504

phosphorus retention data and metadata

Science.gov (United States)

phosphorus retention in wetlands data and metadataThis dataset is associated with the following publication:Lane , C., and B. Autrey. Phosphorus retention of forested and emergent marsh depressional wetlands in differing land uses in Florida, USA. Wetlands Ecology and Management. Springer Science and Business Media B.V;Formerly Kluwer Academic Publishers B.V., GERMANY, 24(1): 45-60, (2016).

Assessing the long term impact of phosphorus fertilization on phosphorus loadings using AnnAGNPS.

Science.gov (United States)

Yuan, Yongping; Bingner, Ronald L; Locke, Martin A; Stafford, Jim; Theurer, Fred D

2011-06-01

High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the AnnAGNPS model was calibrated using USGS monitored data; and then the effects of different phosphorus fertilization rates on phosphorus loadings were assessed. It was found that P loadings increase as fertilization rate increases, and long term higher P application would lead to much higher P loadings to the watershed outlet. The P loadings to the watershed outlet have a dramatic change after some time with higher P application rate. This dramatic change of P loading to the watershed outlet indicates that a "critical point" may exist in the soil at which soil P loss to water changes dramatically. Simulations with different initial soil P contents showed that the higher the initial soil P content is, the less time it takes to reach the "critical point" where P loadings to the watershed outlet increases dramatically. More research needs to be done to understand the processes involved in the transfer of P between the various stable, active and labile states in the soil to ensure that the model simulations are accurate. This finding may be useful in setting up future P application and management guidelines.

Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm

Science.gov (United States)

Yan, Y. C.; Faber, A. J.; de Waal, H.; Kik, P. G.; Polman, A.

1997-11-01

Erbium-doped multicomponent phosphate glass waveguides were deposited by rf sputtering techniques. The Er concentration was 5.3×1020cm-3. By pumping the waveguide at 980 nm with a power of ˜21 mW, a net optical gain of 4.1 dB at 1.535 μm was achieved. This high gain per unit length at low pump power could be achieved because the Er-Er cooperative upconversion interactions in this heavily Er-doped phosphate glass are very weak [the upconversion coefficient is (2.0±0.5)×10-18 cm3/s], presumably due to the homogeneous distribution of Er in the glass and due to the high optical mode confinement in the waveguide which leads to high pump power density at low pump power.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Phosphorus sorption-desorption and effects of temperature, pH and salinity on phosphorus sorption in marsh soils from coastal wetlands with different flooding conditions.

Science.gov (United States)

Bai, Junhong; Ye, Xiaofei; Jia, Jia; Zhang, Guangliang; Zhao, Qingqing; Cui, Baoshan; Liu, Xinhui

2017-12-01

Wetland soils act as a sink or source of phosphorus (P) to the overlaying water due to phosphorus sorption-desorption processes. Litter information is available on sorption and desorption behaviors of phosphorus in coastal wetlands with different flooding conditions. Laboratory experiments were conducted to investigate phosphorus sorption-desorption processes, fractions of adsorbed phosphorus, and the effects of salinity, pH and temperature on phosphorus sorption on soils in tidal-flooding wetlands (TW), freshwater-flooding wetlands (FW) and seasonal-flooding wetlands (SW) in the Yellow River Delta. Our results showed that the freshly adsorbed phosphorus dominantly exists in Occluded-P and Fe/AlP and their percentages increased with increasing phosphorus adsorbed. Phosphorus sorption isotherms could be better described by the modified Langmuir model than by the modified Freundlich model. A binomial equation could be properly used to describe the effects of salinity, pH, and temperature on phosphorus sorption. Phosphorus sorption generally increased with increasing salinity, pH, and temperature at lower ranges, while decreased in excess of some threshold values. The maximum phosphorus sorption capacity (Q max ) was larger for FW soils (256 mg/kg) compared with TW (218 mg/kg) and SW soils (235 mg/kg) (p < 0.05). The percentage of phosphorus desorption (P des ) in the FW soils (7.5-63.5%) was much lower than those in TW (27.7-124.9%) and SW soils (19.2-108.5%). The initial soil organic matter, pH and the exchangeable Al, Fe and Cd contents were important factors influencing P sorption and desorption. The findings of this study indicate that freshwater restoration can contribute to controlling the eutrophication status of water bodies through increasing P sorption. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

2014-08-11

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

High reliability EPI-base radiation hardened power transistor

International Nuclear Information System (INIS)

Clark, L.E.; Saltich, J.L.

1978-01-01

A high-voltage power transistor is described which is able to withstand fluences as high as 3 x 10 14 neutrons per square centimeter and still be able to operate satisfactorily. The collector may be made essentially half as thick and twice as heavily doped as normally and its base is made in two regions which together are essentially four times as thick as the normal power transistor base region. The base region has a heavily doped upper region and a lower region intermediate the upper heavily doped region and the collector. The doping in the intermediate region is as close to intrinsic as possible, in any event less than about 3 x 10 15 impurities per cubic centimeter. The second base region has small width in comparison to the first base region, the ratio of the first to the second being at least about 5 to 1. The base region having the upper heavily doped region and the intermediate or lower low doped region contributes to the higher breakdown voltage which the transistor is able to withstand. The high doping of the collector region essentially lowers that portion of the breakdown voltage achieved by the collector region. Accordingly, it is necessary to transfer certain of this breakdown capability to the base region and this is achieved by using the upper region of heavily doped and an intermediate or lower region of low doping

The study of Phosphorus distribution at Putrajaya Wetland

Science.gov (United States)

Mubin Zahari, Nazirul; Malek, Nur Farzana Fasiha Abdul; Fai, Chow Ming; Humaira Haron, Siti; Hafiz Zawawi, Mohd; Nazmi Ismail, Iszmir; Mohamad, Daud; Syamsir, Agusril; Sidek, Lariyah Mohd; Zakwan Ramli, Mohd; Ismail, Norfariza; Zubir Sapian, Ahmad; Noordin, Normaliza; Rahaman, Nurliyana Abdul; Muhamad, Yahzam; Mat Saman, Jarina

2018-04-01

This study is concerning phosphorus distribution in Putrajaya Wetland. Phosphorus is one of the important component in nutrients for living things be it aquatic or non – aquatic organisms. Total phosphorus (TP) results will give some information on the trophic status of surface water in water bodies. The focus of this study is to determine the total phosphorus concentration in Putrajaya Wetland which is in the inlet of the wetland then outlet of the wetland (Central Wetland Lake). The water sample is taken from Putrajaya Wetland and the test was conducted in the laboratory. The result from this study shows the results for total phosphorus according to month, sampling station and cells. Lowest total phosphate at the Central Wetland compare with all the wetland arms cells.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

Science.gov (United States)

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Recovery of phosphorus from sewerage treatment sludge

Energy Technology Data Exchange (ETDEWEB)

Manuilova, Anastasia

1999-07-01

This thesis is a review of the current state of technologies for the removal of phosphorus from wastewater and sludge, and the recovery and re-use of phosphorus. It explains the need for phosphorus removal and describes the current removal processes. Focus is given to phosphorus crystallisation processes and to the processes which treat sewage treatment sludges into potential sources of phosphorus. An interesting possibility to recover phosphorus from sewage sludge by use of Psenner fractionation is also discussed. By this method, the following phosphate fractions of technological significance may be distinguished: (1) redox sensitive phosphates, mainly bound to Fe(OH){sub 3}; (2) phosphate adsorbed to surfaces (Al{sub 2}O{sub 3}), exchangeable against OH{sup -}, and alkali-soluble phosphate; (3) phosphate bound to CaCO{sub 3}, MgCO{sub 3} and in apatite; and (4) organically bound phosphate. The basic removal mechanisms, process schemes and treatment results are described. Two experiments with three different types of sludges from Henriksdal wastewater treatment plant in Stockholm were performed in the laboratory. It was shown that the addition of sodium hydroxide or hydrochloric acid cause the significant release of phosphate (about 80%) for all types of sludges. If a whole Psenner fractionation was performed the phosphate release is approximately 100%.

Synthesis and investigation of the structure and chemical properties of acyclic compounds of bicoordinated phosphorus with a phosphorus-carbon (p-p)/sub π/ bond

International Nuclear Information System (INIS)

Markovskii, L.N.; Romanenko, V.D.

1987-01-01

Five types of reactions of phosphoalkenes can be distinguished according to the nature of the change in the coordination number and valence of the phosphorus atom in the course of chemical conversions. There are: reactions of cyclodimerization, cycloaddition, and 1,2-addition at the P-C double bond; formation of compounds of tricoordinated pentavalent phosphorus; formation of tetracoordinated phosphorus compounds; reactions of functionalization occurring without a change in the valence and coordination number of the phosphorus atom; and reactions of 1,2-elimination, leading to compounds of monocoordinated phosphorus. This paper reviews each of these reactions in detail, using double-resonance hydrogen 1 and phosphorus 31 NMR spectra and analyzing the acquired chemical shift and spin-spin coupling constants, and also demonstrates the complexation of phosphorus with several metals

The challenge of controlling phosphorus in chronic kidney disease.

Science.gov (United States)

Cannata-Andía, Jorge B; Martin, Kevin J

2016-04-01

The pathogenesis and management of chronic kidney disease-mineral bone disorders (CKD-MBD) has experienced major changes, but the control of serum phosphorus at all stages of CKD still seems to be a key factor to improve clinical outcomes. High serum phosphorus is the most important uremia-related, non-traditional risk factor associated with vascular calcification in CKD patients and in the general population. Phosphorus may also be one of the key elements linking vascular calcification with low bone turnover. The main hormones and factors that contribute to the kidney regulation of phosphorus and calcium include parathyroid hormone, FGF-23, klotho and 1,25-dihydroxyvitamin D (1,25(OH)2D). Serum phosphorus did not start rising until CKD 3b in contrast with the earlier changes observed with fibroblast growth factor-23 (FGF-23), Klotho, calcitriol and parathyroid hormone (PTH). Despite FGF-23 and PTH having synergic effects regarding phosphorus removal, they have opposite effects on 1,25(OH)2D3. At the same stages of CKD in which phosphorus retention appears to occur, calcium retention also occurs. As phosphorus accumulation is associated with poor outcomes, an important question without a clear answer is at which level-range should serum phosphorus be maintained at different stages of CKD to improve clinical outcomes. There are four main strategies to manage phosphate homeostasis; phosphorus dietary intake, administration of phosphate binder agents, effective control of hyperparathyroidism and to ensure in the CKD 5D setting, an adequate scheme of dialysis. Despite all the available strategies, and the introduction of new phosphate binder agents in the market, controlling serum phosphorus remains challenging, and hyperphosphatemia continues to be extremely common in CKD 5 patients. Furthermore, despite phosphate binding agents having proved to be effective in reducing serum phosphorus, their ultimate effects on clinical outcomes remain controversial. Thus, we still

Availability for plants of phosphorus in some virgin peat samples

Directory of Open Access Journals (Sweden)

Armi Kaila

1958-01-01

Full Text Available The availability to plants of native peat phosphorus was studied by chemical methods and by a pot experiment in which three successive oat crops were grown with peat as the only source of phosphorus. The eight samples were collected from virgin peat lands. They were air-dried and ground. The samples were found to represent three different types of phosphorus condition: the first group contained relatively high amounts of inorganic phosphorus which was fairly easily available; the second group had a very high capacity to fix phosphorus which made its high quantity of inorganic phosphorus difficultly available; the third group was very poor in total and inorganic phosphorus but the latter was easily soluble and available to plants. On the basis of the capacity and intensity factors determined according to the method by Teräsvuori and also on the basis of inorganic phosphorus extractable by water fairly reliable predictions could be made of the mutual order of the samples as phosphorus supplyer to the plants in the pot experiment. In an incubation experiment at 27°C the amounts of organic phosphorus mineralized during the period of four months were in some of the samples quite marked, even 40 mg/l, and in most of the samples they corresponded to 5 to 15 per cent of the organic phosphorus. The amounts of phosphorus taken up by the oat crops under the favourable conditions of the pot experiment varied from 11 to 60 mg/l or from 20 to 120 kg/ha.

Recovery of phosphorus compounds from thermally-processed wastes

Science.gov (United States)

Czechowska-Kosacka, A.; Pawłowski, L.; Niedbala, G.; Cel, W.

2018-05-01

Depletion of phosphorus deposits is one of the most serious global problems, which may soon lead to a crisis in food production. It is estimated that if the current living standard is maintained, the available reserves will be depleted in 130 years. Considering the principle of sustainable development, searching for alternative phosphorus sources is extremely important. The work presented the results of the research on the possibility of utilizing wastes as a source of phosphorus. The studies were conducted on poultry manure. The physicochemical properties of phosporus-rich wastes were determined as well. The fertilizing properties of ashes from poultry manure combustion – obtained from different systems, i.e. caged and barn production. The assimilability of phosphorus from the obtained ashes was determined. Potential applications of phosphorus-rich ashes were proposed as well.

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

International Nuclear Information System (INIS)

Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

2014-01-01

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

Microstructure evolution and phase transition in La/Mn doped barium titanate ceramics

Directory of Open Access Journals (Sweden)

Vesna Paunović

2010-12-01

Full Text Available La/Mn codoped BaTiO3 with different La2O3 content, ranging from 0.1 to 5.0 at% La, was investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all investigated samples. The samples were sintered at 1320°C and 1350°C for two hours. Microstructural studies were done using SEM and EDS analysis. The fine-grained microstructure was obtained even for low content of La. The appearance of secondary abnormal grains with serrated features along grain boundaries was observed in 1.0 at% La-BaTiO3 sintered at 1350°C. Nearly flat permittivity-temperature response was obtained in specimens with 2.0 and 5.0 at% La. Using the modified Curie-Weiss law a critical exponent γ and C’were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 and great departure from the Curie-Weiss law for low doped ceramics.

Structural and Biological Assessment of Zinc Doped Hydroxyapatite Nanoparticles

Directory of Open Access Journals (Sweden)

Cristina Liana Popa

2016-01-01

Full Text Available The aim of the current research work was to study the physicochemical and biological properties of synthesized zinc doped hydroxyapatite (ZnHAp nanoparticles with Zn concentrations xZn=0 (HAp, xZn=0.07 (7ZnHAp, and xZn=0.1 (10ZnHAp for potential use in biological applications. The morphology, size, compositions, and incorporation of zinc into hydroxyapatite were characterized by scanning electron microscopy (SEM, transmission electron microscopy (TEM, Fourier Transform Infrared Spectroscopy (FTIR, Raman scattering, and X-Ray Photoelectron Spectroscopy (XPS. In addition, the cytotoxicity of ZnHAp nanoparticles was tested on both E. coli bacteria and human hepatocarcinoma cell line HepG2. The results showed that ZnHAp nanoparticles (HAp, 7ZnHAp, and 10ZnHAp have slightly elongated morphologies with average diameters between 25 nm and 18 nm. On the other hand, a uniform and homogeneous distribution of the constituent elements (calcium, phosphorus, zinc, and oxygen in the ZnHAp powder was noticed. Besides, FTIR and Raman analyses confirmed the proper hydroxyapatite structure of the synthesized ZnHAp nanoparticles with the signature of phosphate, carbonate, and hydroxyl groups. Moreover, it can be concluded that Zn doping at the tested concentrations is not inducing a specific prokaryote or eukaryote toxicity in HAp compounds.

Phosphorus in antique iron music wire.

Science.gov (United States)

Goodway, M

1987-05-22

Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.

Interaction between viologen-phosphorus dendrimers and α-synuclein

International Nuclear Information System (INIS)

Milowska, Katarzyna; Grochowina, Justyna; Katir, Nadia; El Kadib, Abdelkrim; Majoral, Jean-Pierre; Bryszewska, Maria; Gabryelak, Teresa

2013-01-01

In this study the interaction between viologen-phosphorus dendrimers and α-synuclein (ASN) was examined. Polycationic viologen-phosphorus dendrimers (two positive charges per viologen unit) are novel compounds with relatively unknown properties. The influence of these viologen dendrimers on ASN was tested using fluorimetric and circular dichroism methods. ASN contains four tyrosine residues; therefore, the influence of dendrimers on protein molecular conformation by measuring the changes in the ASN fluorescence in the presence of dendrimers was evaluated. The interaction of dendrimers with free L-tyrosine was also monitored. Results show that viologen-phosphorus dendrimers interact with ASN; they quenched the fluorescence of ASN as well as free tyrosine by dynamic and static ways. However, the quenching was not accompanied by modifications in the ASN secondary structure. - Highlights: ► Interaction between viologen-phosphorus dendrimers and α-synuclein (ASN) was investigated. ► Viologen-phosphorus dendrimers can quench the fluorescence of tyrosine in ASN. ► Dendrimers caused red-shift in maximum of fluorescence. ► Viologen-phosphorus dendrimers did not change the secondary structure of ASN.

Ocean acidification: One potential driver of phosphorus eutrophication.

Science.gov (United States)

Ge, Changzi; Chai, Yanchao; Wang, Haiqing; Kan, Manman

2017-02-15

Harmful algal blooms which may be limited by phosphorus outbreak increases currently and ocean acidification worsens presently, which implies that ocean acidification might lead to phosphorus eutrophication. To verify the hypothesis, oxic sediments were exposed to seawater with different pH 30days. If pH was 8.1 and 7.7, the total phosphorus (TP) content in sediments was 1.52±0.50 and 1.29±0.40mg/g. The inorganic phosphorus (IP) content in sediments exposed to seawater with pH8.1 and 7.7 was 1.39±0.10 and 1.06±0.20mg/g, respectively. The exchangeable phosphorus (Ex-P) content in sediments was 4.40±0.45 and 2.82±0.15μg/g, if seawater pH was 8.1 and 7.7. Ex-P and IP contents in oxic sediments were reduced by ocean acidification significantly (pocean acidification was one potential facilitator of phosphorus eutrophication in oxic conditions. Copyright © 2016 Elsevier Ltd. All rights reserved.

Recycling phosphorus by fast pyrolysis of pig manure: concentration and extraction of phosphorus combined with formation of value-added pyrolysis products

NARCIS (Netherlands)

Azuara, M.; Kersten, Sascha R.A.; Kootstra, A.M.J.

2013-01-01

In order to recycle phosphorus from the livestock chain back to the land, fast pyrolysis of concentrated pig manure at different temperatures (400 °C, 500 °C, 600 °C), was undertaken to concentrate the phosphorus in the char fraction for recovery. Results show that 92%–97% of the phosphorus present

The effects of phosphorus limitation on carbon metabolism in diatoms.

Science.gov (United States)

Brembu, Tore; Mühlroth, Alice; Alipanah, Leila; Bones, Atle M

2017-09-05

Phosphorus is an essential element for life, serving as an integral component of nucleic acids, lipids and a diverse range of other metabolites. Concentrations of bioavailable phosphorus are low in many aquatic environments. Microalgae, including diatoms, apply physiological and molecular strategies such as phosphorus scavenging or recycling as well as adjusting cell growth in order to adapt to limiting phosphorus concentrations. Such strategies also involve adjustments of the carbon metabolism. Here, we review the effect of phosphorus limitation on carbon metabolism in diatoms. Two transcriptome studies are analysed in detail, supplemented by other transcriptome, proteome and metabolite data, to gain an overview of different pathways and their responses. Phosphorus, nitrogen and silicon limitation responses are compared, and similarities and differences discussed. We use the current knowledge to propose a suggestive model for the carbon flow in phosphorus-replete and phosphorus-limited diatom cells.This article is part of the themed issue 'The peculiar carbon metabolism in diatoms'. © 2017 The Authors.

Phosphorus and nitrogen in the eutrophication of waters

International Nuclear Information System (INIS)

Salonen, S.; Frisk, T.; Kaermeniemi, T.; Niemi, J.; Pitkaenen, H.; Silvo, K.; Vuoristo, H.

1992-01-01

This report is a summary of the contribution of nitrogen and phosphorus in the eutrophication process of inland and coastal waters. Special attention was paid to the mechanisms of these nutrients in regulating biological processes and to the methods available in estimating their effects in the eutrophication of water bodies. The report includes five chapters which are entitled: Introduction, which is a general background to the subject with special attention to the requirements of the Finnish Water Act. Phosphorus and nitrogen as factors regulating biological processes. The topics included are: definition of eutrophication, forms of phosphorus and nitrogen and their sources to inland and coastal waters, effects of these nutrients as growth factors of phytoplankton and macrophytes and consequences of eutrophication. Estimation of the effects of phosphorus and nitrogen. The topics discussed from the point of view of the tasks of the National Board of Waters and the Environment are: estimation of the effects of phosphorus and nitrogen in the planning and supervision of industry, fish farming, peat production, municipalities, agriculture and forestry. A brief state-of-the art of the research carried out in the National Board of Waters and the Environment is given. Methods of estimating the effects of phosphorus and nitrogen loading in waters. The topics are: relationships between phosphorus and nitrogen concentrations in waters, material balances, water quality models, classification of waters and different groups of organisms as indicators of water quality. Conclusions for the estimation of the effects of phosphorus and nitrogen in receiving waters

Phosphorus solubility in an acid forest soil as influenced by form of applied phosphorus and liming

International Nuclear Information System (INIS)

Fransson, Ann-Mari; Bergkvist, Bo; Tyler, Germund

1999-01-01

Sedimentary phosphorus, superphosphate, and wood-ash, as well as either sedimentary phosphorus. superphosphate or ash combined with lime, were distributed in selected plots in an 80-yr-old Norway spruce forest [Picea abies (L.) Karst]. After 2 yrs, the sedimentary phosphorus had increased the oxalate/oxalic acid-extractable P in the O-horizon, and the superphosphate had increased the oxalate/oxalic acid-extractable P in the E-horizon. At first, the percolation water from the superphosphate treatment showed high P concentrations. It soon returned to control levels, however. The percolation water from the sedimentary phosphorus treatment gradually showed increased phosphate concentrations. The wood-ash increased neither the amount of extractable P nor the P concentration in the percolation water. The oxalate/oxalic acid-extractable P from the sedimentary P treatment was reduced by liming. The P concentration in the percolation water also tended to be reduced. This was perhaps due to formation of Ca phosphates in the vicinity of the lime particles. In addition, if the solubility rate was similar to the uptake rate, it could account for the decreased P concentration

Effects of white phosphorus on mallard reproduction

Science.gov (United States)

Vann, S.I.; Sparling, D.W.; Ottinger, M.A.

2000-01-01

Extensive waterfowl mortality involving thousands of ducks, geese, and swans has occurred annually at Eagle River Flats, Alaska since at least 1982. The primary agent for this mortality has been identified as white phosphorus. Although acute and subacute lethality have been described, sublethal effects are less well known. This study reports on the effects of white phosphorus on reproductive function in the mallard (Anas platyrhynchos) in captivity. Fertility, hatching success, teratogenicity, and egg laying frequency were examined in 70 adult female mallards who received up to 7 daily doses of 0, 0.5, 1.0, and 2.0 mg/kg of white phosphorus. Measurements of fertility and hatchability were reduced by the white phosphorus. Teratogenic effects were observed in embryos from hens dosed at all treatment levels. Egg laying frequency was reduced even at the lowest treatment level; treated hens required a greater number of days to lay a clutch of 12 eggs than control hens. After two doses at 2.0 mg/kg, all females stopped laying completely for a minimum of 10 days and laying frequency was depressed for at least 45 days. Fertility of 10 adult male mallards dosed with 1.0 mg/kg of white phosphorus did not differ from 10 controls, but plasma testosterone levels were significantly (p free-ranging mallards may be impaired if they are exposed to white phosphorus at typical field levels.

Operation of heavily irradiated silicon detectors in non-depletion mode

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

2006-01-01

The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

Galvanomagnetic properties and electronic structure of iron-doped PbTe

Energy Technology Data Exchange (ETDEWEB)

Skipetrov, E. P., E-mail: skip@mig.phys.msu.ru [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Kruleveckaya, O. V.; Skipetrova, L. A. [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Knotko, A. V. [Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Chemistry, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Slynko, E. I.; Slynko, V. E. [Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsy 58001 (Ukraine)

2015-11-21

We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

Science.gov (United States)

Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

2018-02-19

The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

Plant allometry, leaf nitrogen and phosphorus stoichiometry, and interspecific trends in annual growth rates.

Science.gov (United States)

Niklas, Karl J

2006-02-01

Life forms as diverse as unicellular algae, zooplankton, vascular plants, and mammals appear to obey quarter-power scaling rules. Among the most famous of these rules is Kleiber's (i.e. basal metabolic rates scale as the three-quarters power of body mass), which has a botanical analogue (i.e. annual plant growth rates scale as the three-quarters power of total body mass). Numerous theories have tried to explain why these rules exist, but each has been heavily criticized either on conceptual or empirical grounds. N,P-STOICHIOMETRY: Recent models predicting growth rates on the basis of how total cell, tissue, or organism nitrogen and phosphorus are allocated, respectively, to protein and rRNA contents may provide the answer, particularly in light of the observation that annual plant growth rates scale linearly with respect to standing leaf mass and that total leaf mass scales isometrically with respect to nitrogen but as the three-quarters power of leaf phosphorus. For example, when these relationships are juxtaposed with other allometric trends, a simple N,P-stoichiometric model successfully predicts the relative growth rates of 131 diverse C3 and C4 species. The melding of allometric and N,P-stoichiometric theoretical insights provides a robust modelling approach that conceptually links the subcellular 'machinery' of protein/ribosomal metabolism to observed growth rates of uni- and multicellular organisms. Because the operation of this 'machinery' is basic to the biology of all life forms, its allometry may provide a mechanistic explanation for the apparent ubiquity of quarter-power scaling rules.

Interaction between viologen-phosphorus dendrimers and {alpha}-synuclein

Energy Technology Data Exchange (ETDEWEB)

Milowska, Katarzyna, E-mail: milowska@biol.uni.lodz.pl [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland); Grochowina, Justyna [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland); Katir, Nadia [Laboratoire de Chimie de Coordination CNRS, 205 route de Narbonne, 31077 Toulouse (France); El Kadib, Abdelkrim [Institute of Nanomaterials and Nanotechnology (INANOTECH)-MAScIR (Moroccan Foundation for Advanced Science, Innovation and Research), ENSET, Avenue de I' Armee Royale, Madinat El Irfane, 10100 Rabat (Morocco); Majoral, Jean-Pierre [Laboratoire de Chimie de Coordination CNRS, 205 route de Narbonne, 31077 Toulouse (France); Bryszewska, Maria; Gabryelak, Teresa [Department of General Biophysics, Faculty of Biology and Environmental Protection, University of Lodz, Pomorska 141/143, 90-236 Lodz (Poland)

2013-02-15

In this study the interaction between viologen-phosphorus dendrimers and {alpha}-synuclein (ASN) was examined. Polycationic viologen-phosphorus dendrimers (two positive charges per viologen unit) are novel compounds with relatively unknown properties. The influence of these viologen dendrimers on ASN was tested using fluorimetric and circular dichroism methods. ASN contains four tyrosine residues; therefore, the influence of dendrimers on protein molecular conformation by measuring the changes in the ASN fluorescence in the presence of dendrimers was evaluated. The interaction of dendrimers with free L-tyrosine was also monitored. Results show that viologen-phosphorus dendrimers interact with ASN; they quenched the fluorescence of ASN as well as free tyrosine by dynamic and static ways. However, the quenching was not accompanied by modifications in the ASN secondary structure. - Highlights: Black-Right-Pointing-Pointer Interaction between viologen-phosphorus dendrimers and {alpha}-synuclein (ASN) was investigated. Black-Right-Pointing-Pointer Viologen-phosphorus dendrimers can quench the fluorescence of tyrosine in ASN. Black-Right-Pointing-Pointer Dendrimers caused red-shift in maximum of fluorescence. Black-Right-Pointing-Pointer Viologen-phosphorus dendrimers did not change the secondary structure of ASN.

Radiochemical analysis of phosphorus in milk samples

International Nuclear Information System (INIS)

Oliveira, R.M. de; Cunha, I.I.L.

1991-01-01

The determination of phosphorus in milk samples by thermal neutron activation analysis employing radiochemical separation is described. The radiochemical separation consists of the simultaneous irradiation of samples and standards, dissolution of the milk samples in a perchloric acid and nitric acid mixture, addition of zinc hold-back carrier, precipitation of phosphorus as ammonium phospho molybdate (A.M.P.) and sample counting in a Geiger-Mueller detector. The analysis sources of error were studied and the established method was applied to phosphorus analyses in commercial milk samples. (author)

A new model of anomalous phosphorus diffusion in silicon

International Nuclear Information System (INIS)

Budil, M.; Poetzl, H.; Stingeder, G.; Grasserbauer, M.

1989-01-01

A model is presented to describe the 'kink and tail' diffusion of phosphorus. The diffusion behaviour of phosphorus is expplained by the motion of phosphorus-interstitial and phosphorus-vacancy pairs in different charge states. The model yields the enhancement of diffusion in the tail region depending on surface concentration. Furthermore it yields the same selfdiffusion coefficient for interstitials as the gold diffusion experiments. A transformation of the diffusion equation was found to reduce the number of simulation equations. (author) 7 refs., 5 figs

Digestible phosphorus levels for barrows from 50 to 80 kg

Directory of Open Access Journals (Sweden)

Viviane Maria Oliveira dos Santos Nieto

2016-05-01

Full Text Available ABSTRACT This study was carried out to evaluate the levels of digestible phosphorus in diets for barrows with a high potential for lean meat deposition from 50 to 80 kg. Eighty barrows, with an initial weight of 47.93±3.43 kg, were distributed in completely randomized blocks, with each group given five levels of digestible phosphorus (1.86, 2.23, 2.61, 2.99, and 3.36 g kg−1. There were eight replicates, and two animals per experimental unit. Phosphorus levels did not significantly influence feed intake, weight gain, or feed conversion ratio. Daily digestible phosphorus intake increased linearly as levels of phosphorus in the diet were increased. Phosphorus levels did not significantly influence muscle depth, loin eye area, backfat thickness, or the percentage and quantity of lean meat in the carcass. A linear increase was observed for feeding cost as the levels of digestible phosphorus in the diet were increased, and the level of 1.86 g kg−1 cost 29.4% less when compared with the level of 2.61 g kg−1. The dry matter, natural matter, the coefficient of the residue, and volatile solids of the waste were not significantly influenced by phosphorus levels. Conversely, it was possible to observe an increasing linear effect for total solids, total phosphorus, and total nitrogen in the waste of animals receiving diets with increased levels of digestible phosphorus. The level of 1.86 g kg−1, which corresponded to a daily intake of 4.77 g−1 of digestible phosphorus, meets the requirements of barrows weighing 50 to 80 kg.

Chromatography of phosphorus oxoacids

International Nuclear Information System (INIS)

Ohashi, S.

1975-01-01

The present state of studies on the chromatographic separation of phosphorus oxoacids is surveyed. In this paper, chromatographic techniques are divided into four groups, i.e. paper and thin-layer chromatography, paper electrophoresis, ion-exchange chromatography, and gel chromatography. The separation mechanisms and characteristics for these chromatographic methods are discussed and some examples for the separation of phosphorus oxoacids are described. As examples of the application of ion-exchange and gel chromatography, studies on the hot atom chemistry of 32 P in solid inorganic phosphates and those on the substitution reactions between diphosphonate (diphosphite) and polyphosphates are reported. (author)

Effect of phosphorus level on nitrogen accumulation and yield in soybean

International Nuclear Information System (INIS)

You Yubo; Wu Dongmei; Gong Zhenping; Ma Chunmei

2012-01-01

In this paper, the 15 N labeling with sand culture was conducted to study effects of phosphorus level on nitrogen accumulation, nodule nitrogen fixation and yield of soybean plants. Results showed that nitrogen accumulation, fixation and yield of soybean plants all presented a single peak curve with improvement of phosphorus nutrition level, with the peak value of phosphorus concentration in nutrient solution of 31 mg/L. When phosphorus concentration of nutrient solution was 11 mg/L, no obvious promotion was found on the ratio of nodule nitrogen fixation when increasing phosphorus concentration again, However, when phosphorus concentration of nutrient solution was 21 mg/L, increasing phosphorus concentration again had no obvious promotion on soybean plant nitrogen accumulation, nodule nitrogen fixation accumulation and yield, indicating that effect of phosphorus nutrition level on nitrogen fixation was lower than that on yield formation level. (authors)

Radiation induced phosphorus segregation in austenitic and ferritic alloys

International Nuclear Information System (INIS)

Brimhall, J.L.; Baer, D.R.; Jones, R.H.

1984-01-01

The radiation induced surface segregation (RIS) of phosphorus in stainless steel attained a maximum at a dose of 0.8 dpa then decreased continually with dose. This decrease in the surface segregation of phosphorus at high dose levels has been attributed to removal of the phosphorus layer by ion sputtering. Phosphorus is not replenished since essentially all of the phosphorus within the irradiation zone has been segregated to the surface. Sputter removal can explain the previously reported absence of phosphorus segregation in ferritic alloys irradiated at high dosessup(1,2) (>1 dpa) since irradiation of ferritic alloys to low doses has shown measurable RIS. This sputtering phenomenon places an inherent limitation to the heavy ion irradiation technique for the study of surface segregation of impurity elements. The magnitude of the segregation in ferritics is still much less than in stainless steel which can be related to the low damage accumulation in these alloys. (orig.)

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

Science.gov (United States)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Phosphorus conditions at various depths in some mineral soils

Directory of Open Access Journals (Sweden)

Armi Kaila

1963-05-01

Full Text Available The fractionation method of CHANG and JACKSON (2 was used for the analysing of the distribution of inorganic phosphorus in the topsoil and subsoil of twelve virgin and twelve cultivated soils from various parts of the country; two virgin soils and twenty cultivated soils were studied down to the depths of 60 cm or 70 cm, one even to 2 m. In the more intensively podsolized virgin soils the surface layers, particularly the A2-horizon, are very poor in all the forms of inorganic phosphorus while the enrichment layer will contain fairly high amounts of iron and aluminium bound phosphorus. The application of fertilizers and the other cultivation managements tend to accumulate aluminium and iron bound phosphorus in the plough layer. In some soils the minimum content of calcium bound phosphorus occurs in the layer below the plough layer, but an increase with the depth seems to be typical to it in all the non-Litorina soils, while the first two fractions usually decrease with the depth. In the Litorina soils the iron bound phosphorus is dominant in all the layers studied, but the content of reductant soluble phosphorus is low in these soils, and their content of calcium bound phosphorus is higher than the content of phosphorus bound by aluminium. The predominance of calcium phosphate in the subsoil and the rather low content of reductant soluble and occluded fractions indicate that the chemical weathering in most of our soils is not yet at an advanced stage. The test values determined were in accordance with the results of the fractionation and the estimation of ammonium oxalate soluble aluminium and iron.

Annealing behaviour of excess carriers in neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Maekawa, T.; Nogami, S.; Inoue, S.

1993-01-01

In neutron-transmutation-doped silicon wafers excess carriers are clearly generated over the transmuted phosphorus atoms. The generation occurs for annealing temperatures above 900 o C. The maximum percentage of excess carriers obtained is about 24.5% of the final carrier concentration. Due to the difference in energy of generation and removal, the excess carriers can be removed by annealing above 800 o C. The radiation damage responsible for generation of excess carriers is fairly thermostable in the range of annealing temperatures below 800 o C. From deep-level transient spectroscopy measurements, it is found that the radiation damage remains insensitive to changes in carrier concentration. The activation energies of excess carrier generation and removal are estimated from the analysis of the thermal and temporal behaviours of radiation damage in the annealing process. (Author)

Iron oxides, divalent cations, silica, and the early earth phosphorus crisis

DEFF Research Database (Denmark)

Jones, C.; Nomosatryo, S.; Crowe, S.A.

2015-01-01

As a nutrient required for growth, phosphorus regulates the activity of life in the oceans. Iron oxides sorb phosphorus from seawater, and through the Archean and early Proterozoic Eons, massive quantities of iron oxides precipitated from the oceans, producing a record of seawater chemistry...... that is preserved as banded iron formations (BIFs) today. Here we show that Ca2+, Mg2+, and silica in seawater control phosphorus sorption onto iron oxides, influencing the record of seawater phosphorus preserved in BIFs. Using a model for seawater cation chemistry through time, combined with the phosphorus...... waters shifted from phosphorus to iron limiting....

Evaluation of added phosphorus in six volcanic ash soils

International Nuclear Information System (INIS)

Pino N, I.; Casas G, L.; Urbinsa P, M.C.

1984-01-01

The behaviour of added phosphorus in six volcanic ash soils (Andepts) was studied. Two phosphate retention solution were used; one of them labeled with 32 P carrier free. The phosphate retention solution (25 ml) was added to 5 gr of air dry soil. The remainder phosphorus in solution was measured through colorimetry and liquid scintillation. Over 85% phosphorus retention was measured in five soils. A phosphate retention solution labeled with 32 P carrier free proved to be efficient for the determination of phosphorus retention rates in the volcanic ash soils studied. (Author)

Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

National Research Council Canada - National Science Library

Crandall, Alan L

2007-01-01

USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

Total phosphorus recovery in flowback fluids after gelled hydrocarbon fracturing fluid treatments

Energy Technology Data Exchange (ETDEWEB)

Fyten, G.; Houle, P.; Taylor, R.S. [Halliburton Energy Services, Calgary, AB (Canada); Stemler, P.S. [Petro-Canada Oil and Gas Inc., Calgary, AB (Canada); Lemieux, A. [Omnicon Consultants Inc., Calgary, AB (Canada)

2006-07-01

Carbon dioxide miscible hydrocarbon fracturing fluids are used in unconventional gas reservoirs such as tight gas, shale gas, and coalbed methane. These fracturing fluids address phase trapping concerns by using oil-based fracturing fluid technology for use in reservoirs that are water sensitive. This paper addressed the problem of refinery tower fouling caused by volatile phosphorous components found in phosphate ester oil gellants. In order to address costly unplanned refinery shutdowns, a maximum 0.5 ppm volatile phosphorus in crude specification has been proposed. However, this specification is based on average concentrations of phosphorus added to the oil to gel it. The specification also falsely assumes that the oil is phosphorus free to begin with. The authors noted that refinery tower fouling is actually the result of total phosphorus throughput rather than peak concentrations at any one point. This paper focused on the total phosphorus recovery in addition to peak concentrations. It also examined what percentage of the total recovered phosphorus is in fact volatile, since this is the material that plugs the trays. The total per cent recovery of phosphorus originally added as phosphorus based gellant was examined along with the total percent recovery of volatile phosphorus as a function of total phosphorus. The phosphorus concentrations in both new and reused fracturing fluids before addition of gellants was also examined along with the potential explanations for phosphorus concentrations higher than those originally added. It was shown that the first 50 per cent of a hydraulic fracturing fluid flowback can result in recovery of greater than or less than the amount of phosphorus added to that portion of the fracturing fluid. The initial high concentrations of total and volatile phosphorus are greater than the phosphorus concentrations inherent in the system. Therefore, as flowback continues, there would be a rapid decline in the concentration of phosphorus

Isotopically exchangeable phosphorus

International Nuclear Information System (INIS)

Barbaro, N.O.

1984-01-01

A critique revision of isotope dilution is presented. The concepts and use of exchangeable phosphorus, the phosphate adsorption, the kinetics of isotopic exchange and the equilibrium time in soils are discussed. (M.A.C.) [pt

Neutron activation analysis for calibration of phosphorus implantation dose

International Nuclear Information System (INIS)

Paul, Rick L.; Simons, David S.

2001-01-01

A feasibility study was undertaken to determine if radiochemical neutron activation analysis (RNAA) can be used to certify the retained dose of phosphorus implanted in silicon, with the goal of producing a phosphorus SRM. Six pieces of silicon, implanted with a nominal phosphorus dose of 8.5x10 14 atoms·cm -2 were irradiated at a neutron flux of 1.05x10 14 cm -2 ·s -1 . The samples were mixed with carrier, dissolved in acid, the phosphorus isolated by chemical separation, and 32 P measured using a beta proportional counter. A mean phosphorus concentration of (8.35±0.20)x10 14 atoms·cm -2 (uncertainty=1 standard deviation) was determined for the six samples, in agreement with the nominal implanted dose

Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

Energy Technology Data Exchange (ETDEWEB)

Ruess, F J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Goh, K E J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Butcher, M J [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Reusch, T C G [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Oberbeck, L [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Weber, B [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Hamilton, A R [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Simmons, M Y [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia)

2007-01-31

We demonstrate the use of a scanning tunnelling microscope (STM) to pattern buried, highly planar phosphorus-doped silicon wires with widths down to the sub-10 nm level. We confirm the structural integrity of these wires using both buried dopant imaging techniques and ex situ electrical characterization. Four terminal I-V characteristics at 4 K show ohmic behaviour for all wires with resistivities between 1 and 24 x 10{sup -8} {omega} cm. Magnetotransport measurements reveal that conduction is dominated by disordered scattering with quantum corrections consistent with 2D weak localization theory. Our results show that these quantum corrections become more pronounced as the electron phase coherence length approaches the width of the wire.

Electrochemical Decontamination of Painted and Heavily Corroded Metals

International Nuclear Information System (INIS)

Marczak, S.; Anderson, J.; Dziewinski, J.

1998-01-01

The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

Studies on phosphorus utilization as influenced by bacterial seed inoculation and phosphorus fertilization in summer mung (Vigna radiata L. Wilczek)

International Nuclear Information System (INIS)

Kothari, S.K.; Saraf, C.S.

1988-01-01

A greenhouse experiment was conducted with four types of bacterial inoculation (Rhizobium alone; Rhizobium along with Azotobacter chroococcum; Rhizobium along with Azospirillum brasilense and no inoculation) and three levels of phosphorus ( 32 P labelled SSP) application (O, 6.5 ppm and 13.0 ppm P). Inoculation with Rhizobium along with Azotobacter chroococcum was found to be better than Rhizobium alone or Rhizobium along with Azospirillum brasilense in respect of leaf, stem, root and nodule dry weight, phosphorus uptake and utilization efficiency. P application upto 6.5 ppm significantly increased leaf, stem, root and nodule dry weight and phosphorus uptake. Per cent phosphorus derived from fertilizer (per cent pdff) and fertilizer P uptake significantly increased while P utilization efficiency significantly decreased with increasing levels of P application. (author). 12 refs., 2 tables

Improving phosphorus availability in an acid soil using organic amendments produced from agroindustrial wastes.

Science.gov (United States)

Ch'ng, Huck Ywih; Ahmed, Osumanu Haruna; Majid, Nik Muhamad Ab

2014-01-01

In acid soils, soluble inorganic phosphorus is fixed by aluminium and iron. To overcome this problem, acid soils are limed to fix aluminium and iron but this practice is not economical. The practice is also not environmentally friendly. This study was conducted to improve phosphorus availability using organic amendments (biochar and compost produced from chicken litter and pineapple leaves, resp.) to fix aluminium and iron instead of phosphorus. Amending soil with biochar or compost or a mixture of biochar and compost increased total phosphorus, available phosphorus, inorganic phosphorus fractions (soluble inorganic phosphorus, aluminium bound inorganic phosphorus, iron bound inorganic phosphorus, redundant soluble inorganic phosphorus, and calcium bound phosphorus), and organic phosphorus. This was possible because the organic amendments increased soil pH and reduced exchangeable acidity, exchangeable aluminium, and exchangeable iron. The findings suggest that the organic amendments altered soil chemical properties in a way that enhanced the availability of phosphorus in this study. The amendments effectively fixed aluminium and iron instead of phosphorus, thus rendering phosphorus available by keeping the inorganic phosphorus in a bioavailable labile phosphorus pool for a longer period compared with application of Triple Superphosphate without organic amendments.

Improving Phosphorus Availability in an Acid Soil Using Organic Amendments Produced from Agroindustrial Wastes

Directory of Open Access Journals (Sweden)

Huck Ywih Ch’ng

2014-01-01

Full Text Available In acid soils, soluble inorganic phosphorus is fixed by aluminium and iron. To overcome this problem, acid soils are limed to fix aluminium and iron but this practice is not economical. The practice is also not environmentally friendly. This study was conducted to improve phosphorus availability using organic amendments (biochar and compost produced from chicken litter and pineapple leaves, resp. to fix aluminium and iron instead of phosphorus. Amending soil with biochar or compost or a mixture of biochar and compost increased total phosphorus, available phosphorus, inorganic phosphorus fractions (soluble inorganic phosphorus, aluminium bound inorganic phosphorus, iron bound inorganic phosphorus, redundant soluble inorganic phosphorus, and calcium bound phosphorus, and organic phosphorus. This was possible because the organic amendments increased soil pH and reduced exchangeable acidity, exchangeable aluminium, and exchangeable iron. The findings suggest that the organic amendments altered soil chemical properties in a way that enhanced the availability of phosphorus in this study. The amendments effectively fixed aluminium and iron instead of phosphorus, thus rendering phosphorus available by keeping the inorganic phosphorus in a bioavailable labile phosphorus pool for a longer period compared with application of Triple Superphosphate without organic amendments.

Occurrence of phosphorus in groundwater and surface water of northwestern Mississippi

Science.gov (United States)

Welch, Heather L.; Kingsbury, James A.; Coupe, Richard H.

2010-01-01

Previous localized studies of groundwater samples from the Mississippi River Valley alluvial (MRVA) aquifer have demonstrated that dissolved phosphorus concentrations in the aquifer are much higher than the national background concentration of 0.03 milligram per liter (mg/L) found in 400 shallow wells across the country. Forty-six wells screened in the MRVA aquifer in northwestern Mississippi were sampled from June to October 2010 to characterize the occurrence of phosphorus in the aquifer, as well as the factors that might contribute to high dissolved phosphorus concentrations in groundwater. Dissolved phosphorus concentrations ranged from 0.12 to 1.2 mg/L with a median concentration of 0.62 mg/L. The predominant subunit of the MRVA aquifer in northwestern Mississippi is the Holocene alluvium in which median dissolved phosphorus concentrations were higher than the Pleistocene valley trains deposits subunit. Highest phosphorus concentrations occurred in water from wells located along the Mississippi River. A general association between elevated phosphorus concentrations and dissolved iron concentrations suggests that reducing conditions that mobilize iron in the MRVA aquifer also might facilitate transport of phosphorus. Using baseflow separation to estimate the contribution of baseflow to total streamflow, the estimated contribution to the total phosphorus load associated with baseflow at the Tensas River at Tendal, LA, and at the Bogue Phalia near Leland, MS, was 23 percent and 8 percent, respectively. This analysis indicates that elevated concentrations of dissolved phosphorus in the MRVA aquifer could be a possible source of phosphorus to streams during baseflow conditions. However, the fate of phosphorus in groundwater discharge and irrigation return flow to streams is not well understood.

Secondary poisoning of kestrels by white phosphorus

Science.gov (United States)

Sparling, D.W.; Federoff, N.E.

1997-01-01

Since 1982, extensive waterfowl mortality due to white phosphorus (P4) has been observed at Eagle River Flats, a tidal marsh near Anchorage, Alaska. Ducks and swans that ingest P4 pellets become lethargic and may display severe convulsions. Intoxicated waterfowl attract raptors and gulls that feed on dead or dying birds. To determine if avian predators can be affected by secondary poisoning, we fed American kestrels (Falco sparverius) 10-day-old domestic chickens that had been dosed with white phosphorus. Eight of 15 kestrels fed intact chicks with a pellet of P4 implanted in their crops died within seven days. Three of 15 kestrels fed chicks that had their upper digestive tracts removed to eliminate any pellets of white phosphorus also died. Hematocrit and hemoglobin in kestrels decreased whereas lactate dehydrogenaseL, glucose, and alanine aminotransferase levels in plasma increased with exposure to contaminated chicks. Histological examination of liver and kidneys showed that the incidence and severity of lesions increased when kestrels were fed contaminated chicks. White phosphorus residues were measurable in 87% of the kestrels dying on study and 20% of the survivors. This study shows that raptors can become intoxicated either by ingesting portions of digestive tracts containing white phosphorus pellets or by consuming tissues of P4 contaminated prey.

The Spatial-temperal Distribution of Phosphorus Species and the Main Factors Influencing on Phosphorus Transportation in Middle Reaches of the Yarlung Zangbo River, China

Science.gov (United States)

Pu, X.; An, R.; Li, R.; Huang, W.; Li, J.

2017-12-01

The objectives of the current study are to investigate the spatial, temperal variation of phisphorus (P) fraction in middle reaches of the Yarlung Zangbo River of China. Samples were collected in April (dry season), August (wet season), and Octber (normal season) along with the middle reaches from Lazi site to Nuxia sitewhich which is about 1000km long. Sequential extraction were applied to determine the forms of phosphorus in suspended particles and to assess the potential bioavailability of particulate P. The results indicated that the distribution of suspended particle size inflenced not only the total phosphorus concentration, but also the proportions of different forms of phosphorus. The exchangeable phosphorus (Ex-P), Fe-bound-P, Ca-bound-P were the most aboundant forms and the highest proportions of total P. The total P concentrations were closely relative to the concentration of suspended particles. According to the characteristics of suspended particles in the Yarlung Zangbo River, the relationship between the suspended particles size and species of phosphorus was established though statistical analysis. The Ex-P increased with the decreasing of suspended particulate size. The content of bioavailable particulate phosphorus varied greatly with the proportions of particulate size. In genral, the higher the proportion of smaller particle size, the higher the content of bioavailable phosphorus. The main factors which affect the phosphorus transportation in Yarlung Zangbo River had also been discussed.

Phytoextraction of excess soil phosphorus

International Nuclear Information System (INIS)

Sharma, Nilesh C.; Starnes, Daniel L.; Sahi, Shivendra V.

2007-01-01

In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils

Phytoextraction of excess soil phosphorus

Energy Technology Data Exchange (ETDEWEB)

Sharma, Nilesh C. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Starnes, Daniel L. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Sahi, Shivendra V. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States)]. E-mail: shiv.sahi@wku.edu

2007-03-15

In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils.

Do invasive mussels restrict offshore phosphorus transport in Lake Huron?

Science.gov (United States)

Cha, Yoonkyung; Stow, Craig A; Nalepa, Thomas F; Reckhow, Kenneth H

2011-09-01

Dreissenid mussels were first documented in the Laurentian Great Lakes in the late 1980s. Zebra mussels (Dreissena polymorpha) spread quickly into shallow, hard-substrate areas; quagga mussels (Dreissena rostriformis bugensis) spread more slowly and are currently colonizing deep, offshore areas. These mussels occur at high densities, filter large water volumes while feeding on suspended materials, and deposit particulate waste on the lake bottom. This filtering activity has been hypothesized to sequester tributary phosphorus in nearshore regions reducing offshore primary productivity. We used a mass balance model to estimate the phosphorus sedimentation rate in Saginaw Bay, a shallow embayment of Lake Huron, before and after the mussel invasion. Our results indicate that the proportion of tributary phosphorus retained in Saginaw Bay increased from approximately 46-70% when dreissenids appeared, reducing phosphorus export to the main body of Lake Huron. The combined effects of increased phosphorus retention and decreased phosphorus loading have caused an approximate 60% decrease in phosphorus export from Saginaw Bay to Lake Huron. Our results support the hypothesis that the ongoing decline of preyfish and secondary producers including diporeia (Diporeia spp.) in Lake Huron is a bottom-up phenomenon associated with decreased phosphorus availability in the offshore to support primary production.

The Prevalence of Phosphorus Containing Food Additives in Top Selling Foods in Grocery Stores

Science.gov (United States)

León, Janeen B.; Sullivan, Catherine M.; Sehgal, Ashwini R.

2013-01-01

Objective To determine the prevalence of phosphorus-containing food additives in best selling processed grocery products and to compare the phosphorus content of a subset of top selling foods with and without phosphorus additives. Design The labels of 2394 best selling branded grocery products in northeast Ohio were reviewed for phosphorus additives. The top 5 best selling products containing phosphorus additives from each food category were matched with similar products without phosphorus additives and analyzed for phosphorus content. Four days of sample meals consisting of foods with and without phosphorus additives were created and daily phosphorus and pricing differentials were computed. Setting Northeast Ohio Main outcome measures Presence of phosphorus-containing food additives, phosphorus content Results 44% of the best selling grocery items contained phosphorus additives. The additives were particularly common in prepared frozen foods (72%), dry food mixes (70%), packaged meat (65%), bread & baked goods (57%), soup (54%), and yogurt (51%) categories. Phosphorus additive containing foods averaged 67 mg phosphorus/100 gm more than matched non-additive containing foods (p=.03). Sample meals comprised mostly of phosphorus additive-containing foods had 736 mg more phosphorus per day compared to meals consisting of only additive-free foods. Phosphorus additive-free meals cost an average of $2.00 more per day. Conclusion Phosphorus additives are common in best selling processed groceries and contribute significantly to their phosphorus content. Moreover, phosphorus additive foods are less costly than phosphorus additive-free foods. As a result, persons with chronic kidney disease may purchase these popular low-cost groceries and unknowingly increase their intake of highly bioavailable phosphorus. PMID:23402914

The prevalence of phosphorus-containing food additives in top-selling foods in grocery stores.

Science.gov (United States)

León, Janeen B; Sullivan, Catherine M; Sehgal, Ashwini R

2013-07-01

The objective of this study was to determine the prevalence of phosphorus-containing food additives in best-selling processed grocery products and to compare the phosphorus content of a subset of top-selling foods with and without phosphorus additives. The labels of 2394 best-selling branded grocery products in northeast Ohio were reviewed for phosphorus additives. The top 5 best-selling products containing phosphorus additives from each food category were matched with similar products without phosphorus additives and analyzed for phosphorus content. Four days of sample meals consisting of foods with and without phosphorus additives were created, and daily phosphorus and pricing differentials were computed. Presence of phosphorus-containing food additives, phosphorus content. Forty-four percent of the best-selling grocery items contained phosphorus additives. The additives were particularly common in prepared frozen foods (72%), dry food mixes (70%), packaged meat (65%), bread and baked goods (57%), soup (54%), and yogurt (51%) categories. Phosphorus additive-containing foods averaged 67 mg phosphorus/100 g more than matched nonadditive-containing foods (P = .03). Sample meals comprised mostly of phosphorus additive-containing foods had 736 mg more phosphorus per day compared with meals consisting of only additive-free foods. Phosphorus additive-free meals cost an average of $2.00 more per day. Phosphorus additives are common in best-selling processed groceries and contribute significantly to their phosphorus content. Moreover, phosphorus additive foods are less costly than phosphorus additive-free foods. As a result, persons with chronic kidney disease may purchase these popular low-cost groceries and unknowingly increase their intake of highly bioavailable phosphorus. Copyright © 2013 National Kidney Foundation, Inc. Published by Elsevier Inc. All rights reserved.

Phosphorus Processing—Potentials for Higher Efficiency

Directory of Open Access Journals (Sweden)

Ludwig Hermann

2018-05-01

Full Text Available In the aftermath of the adoption of the Sustainable Development Goals (SDGs and the Paris Agreement (COP21 by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million tons per year, or directly discharged to the sea. Eutrophication, acidification, and long-term pollution are the environmental impacts of both practices. Economic and regulatory framework conditions determine whether the industry continues wasting phosphorus, pursues efficiency improvements or stops operations altogether. While reviewing current industrial practice and potentials for increasing processing efficiency with lower impact, the article addresses potentially conflicting goals of low energy and material use as well as Life Cycle Assessment (LCA as a tool for evaluating the relative impacts of improvement strategies. Finally, options by which corporations could pro-actively and credibly demonstrate phosphorus stewardship as well as options by which policy makers could enforce improvement without impairing business locations are discussed.

The role of phosphorus sources in the growth of lowland rice plant

International Nuclear Information System (INIS)

Sisworo, Widjang Herry

1975-01-01

The role of phosphorus sources in the growth of lowland rice plant was studied using P 32 -labelled superphosphate. The experiment was carried out in the glass house. Three high yielding rice varieties used in the experiment were PB 5, IR 22 and Pelita I/1. Results obtained from the experiment showed that, during early growth, seedlings in the nursery did not require any phosphorus from outside. The phosphorus needed was apparently supplied by the seeds themselves. After 10 days seedlings started using phosphorus from outside the plants. Phosphorus in the plants derived from fertilizer reached 5-12% at 16 days old and 25-40% at transplanting time depending on the varieties. Higher response to phosphorus application in the nursery was given by Pelita I/1, the phosphorus in the plants derived from fertilizer was 40% at transplanting time. The phosphorus requirement was mostly supplied by the application of phosphorus fertilizer till 20 days after transplanting but after 40 days soil-phosphorus became the main source for the plants. (author)

Phosphorus in the feeding of pigs : effect of diet on the absorption and retention of phosphorus by growing pigs

NARCIS (Netherlands)

Jongbloed, A.W.

1987-01-01

An extensive review is given of the literature concerning phosphorus feeding of pigs. Subjects dealt with are: 1. physiological background, regulation and effect of diet composition and nutrient supply on phosphorus absorption and retention; 2. estimation of the amount of P present in the

Remediation of phosphorus from electric furnace waste streams

International Nuclear Information System (INIS)

Hanna, J.; Jung, J.O.

1992-01-01

Electrothermal production of elemental phosphorus (P4) generates substantial amounts of highly toxic phossy water sludge, slag and other gaseous wastes. Because of their high phosphorus content the sludges pose potential fire hazards. In the absence of a reliable processing technology, large amounts of these hazardous wastes are accumulated at an annual rate of 1.5-2.5 million tons from current and past operations. The accumulated sludges are stored in ponds or in special containment vessels in 30 locations in 18 states including Alabama, California, Tennessee, Idaho and Montana. Serious water pollution problems will result unless these wastes are given extensive treatment to remove the elemental phosphorus. Federal regulations prohibit permanent storage of flammable wastes. This paper reports that recently, researchers at the University of Alabama have developed a two-step method for the treatment of phosphorus sludge that includes bulk removal of phosphorus by physical separation techniques followed by remediation of the residual P4 in the sludge using a novel wet air oxidation technique known as HSAD

A Hierarchical Phosphorus Nanobarbed Nanowire Hybrid: Its Structure and Electrochemical Properties.

Science.gov (United States)

Zhao, Dan; Li, Beibei; Zhang, Jinying; Li, Xin; Xiao, Dingbin; Fu, Chengcheng; Zhang, Lihui; Li, Zhihui; Li, Jun; Cao, Daxian; Niu, Chunming

2017-06-14

Nanostructured phosphorus-carbon composites are promising materials for Li-ion and Na-ion battery anodes. A hierarchical phosphorus hybrid, SiC@graphene@P, has been synthesized by the chemical vapor deposition of phosphorus on the surfaces of barbed nanowires, where the barbs are vertically grown graphene nanosheets and the cores are SiC nanowires. A temperature-gradient vaporization-condensation method has been used to remove the unhybridized phosphorus particles formed by homogeneous nucleation. The vertically grown barb shaped graphene nanosheets and a high concentration of edge carbon atoms induced a fibrous red phosphorus (f-RP) growth with its {001} planes in parallel to {002} planes of nanographene sheets and led to a strong interpenetrated interface interaction between phosphorus and the surfaces of graphene nanosheets. This hybridization has been demonstrated to significantly enhance the electrochemical performances of phosphorus.

Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

Energy Technology Data Exchange (ETDEWEB)

Pyatilova, O. V., E-mail: 5ilova87@gmail.com; Gavrilov, S. A.; Shilyaeva, Yu. I. [Zelenograd, National Research University of Electronic Technology (MIET) (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics (Russian Federation); Shaman, Yu. P. [Zelenograd, Scientific-Manufacturing Complex “Technological Centre” MIET (Russian Federation); Dudin, A. A. [Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics (Russian Federation)

2017-02-15

The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C{sub 2}H{sub 5}OH/H{sub 2}O{sub 2} solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.

Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

KAUST Repository

Yao, Kexin

2017-06-24

It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

Overview of phosphorus diffusion and gettering in multicrystalline silicon

International Nuclear Information System (INIS)

Bentzen, A.; Holt, A.

2009-01-01

This paper gives an overview of phosphorus emitter diffusion and gettering as experienced in multicrystalline silicon solar cell processing. The paper gives a brief summary of the diffusion properties of phosphorus in silicon, explaining the nature behind the characteristic kink-and-tail profiles often encountered in silicon solar cells. Then, phosphorus diffusion gettering is discussed with particular focus to the inhomogeneous nature of multicrystalline silicon, and it is discussed how the abundant presence of dislocations in the areas of the material having a low recombination lifetime can cause only minor lifetime enhancements in such areas upon phosphorus diffusion. Attributed to dissociation of precipitated impurities in combination with longer effective diffusion lengths of the impurities, it is then seen that even poor areas of multicrystalline can exhibit a noticeable improvement by phosphorus diffusion gettering when applying a lower diffusion temperature for a longer duration.

The Potential Phosphorus Crisis: Resource Conservation and Possible Escape Technologies: A Review

Directory of Open Access Journals (Sweden)

Saba Daneshgar

2018-06-01

Full Text Available Phosphorus is an essential nutrient for every organism on the Earth, yet it is also a potential environmental pollutant, which may cause eutrophication of water bodies. Wastewater treatment plants worldwide are struggling to eliminate phosphorus from effluents, at great cost, yet current research suggests that the world may deplete the more available phosphorus reserves by around 2300. This, in addition to environmental concerns, evokes the need for new phosphorus recovery techniques to be developed, to meet future generations needs for renewable phosphorus supply. Many studies have been, and are, carried out on phosphorus recovery from wastewater and its sludge, due to their high phosphorus content. Chemical precipitation is the main process for achieving a phosphorus-containing mineral suitable for reuse as a fertilizer, such as struvite. This paper reviews the current status and future trends of phosphorus production and consumption, and summarizes current recovery technologies, discussing their possible integration into wastewater treatment processes, according to a more sustainable water-energy-nutrient nexus.

Structure of inorganic phosphorus-nitrogen tetrahedral compounds

International Nuclear Information System (INIS)

Vitola, A.; Ronis, J.; Avotins, V.; Millers, T.

1997-01-01

The structure analysis of phosphorus-nitrogen compounds has shown the possibility of the P(O,N) 4 tetrahedra to form various kinds of structures. The wide spectrum of the properties determined by the diversity of structures marks the considerable promise to the future application of phosphorus-nitrogen compounds

Phosphorus dendrimers and photodynamic therapy. Spectroscopic studies on two dendrimer-photosensitizer complexes: Cationic phosphorus dendrimer with rose bengal and anionic phosphorus dendrimer with methylene blue.

Science.gov (United States)

Dabrzalska, Monika; Zablocka, Maria; Mignani, Serge; Majoral, Jean Pierre; Klajnert-Maculewicz, Barbara

2015-08-15

Dendrimers due to their unique architecture may play an important role in drug delivery systems including chemotherapy, gene therapy and recently, photodynamic therapy as well. We investigated two dendrimer-photosensitizer systems in context of potential use of these systems in photodynamic therapy. The mixtures of an anionic phosphorus dendrimer of the second generation and methylene blue were studied by UV-vis spectroscopy while that of a cationic phosphorus dendrimer (third generation) and rose bengal were investigated by spectrofluorimetric methods. Spectroscopic analysis of these two systems revealed the formation of dendrimer-photosensitizer complexes via electrostatic interactions as well as π stacking. The stoichiometry of the rose bengal-cationic dendrimer complex was estimated to be 7:1 and 9:1 for the methylene blue-anionic dendrimer complex. The results suggest that these polyanionic or polycationic phosphorus dendrimers can be promising candidates as carriers in photodynamic therapy. Copyright © 2015 Elsevier B.V. All rights reserved.

Direct observation of thermal disorder and decomposition of black phosphorus

Science.gov (United States)

Yoo, Seung Jo; Kim, Heejin; Lee, Ji-Hyun; Kim, Jin-Gyu

2018-02-01

Theoretical research has been devoted to reveal the properties of black phosphorus as a two-dimensional nanomaterial, but little attention has been paid for the experimental characterization. In this study, the thermal disorder and decomposition of black phosphorus were examined using in situ heating transmission electron microscopy experiments. We observed that the breaking of crystallographic symmetry begins at 380 °C under vacuum condition, followed by the phosphorus evaporates after long-term heating at 400 °C. This decomposition process can be initiated by the surficial vacancy and proceeds toward both interlayer ([010]) and intralayer ([001]) directions. The results on the thermal behavior of black phosphorus provide useful guidance for thin film deposition and fabrication processes with black phosphorus.

Measurement of phosphorus in metals by RNAA

International Nuclear Information System (INIS)