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Sample records for heavily phosphorus doped

  1. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  2. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

    1994-01-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

  3. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

    1994-11-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

  4. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  5. Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

    2008-01-01

    The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

  6. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  7. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Near-infrared free carrier absorption in heavily doped silicon

    International Nuclear Information System (INIS)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-01-01

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

  9. Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

    2018-06-01

    In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

  10. Heavily nitrogen doped, graphene supercapacitor from silk cocoon

    International Nuclear Information System (INIS)

    Sahu, Vikrant; Grover, Sonia; Tulachan, Brindan; Sharma, Meenakshi; Srivastava, Gaurav; Roy, Manas; Saxena, Manav; Sethy, Niroj; Bhargava, Kalpana; Philip, Deepu; Kim, Hansung; Singh, Gurmeet; Singh, Sushil Kumar; Das, Mainak; Sharma, Raj Kishore

    2015-01-01

    Doping of graphene with nitrogen is of much interest, since it improves the overall conductivity and supercapacitive properties. Besides conductivity, nitrogen doping also enhances the pseudo-capacitance due to fast and reversible surface redox processes. In this work, we have developed a cheap and easy process for synthesizing heavily nitrogen doped graphene (15% nitrogen) from non-mulberry silk cocoon membrane (Tassar, Antheraea mylitta) by pyrolyzing the cocoon at 400 °C in argon atmosphere. Further we have investigated the performance of this heavily ‘nitrogen doped graphene’ (NDG) in a supercapacitor device. Our results suggest that NDG obtained from cocoon has improved supercapacitor performance. The improved performance is due to the high electronegativity of nitrogen that forms dipoles on the graphene surface. These dipoles consequently enhance the tendency of graphene to attract charged species to its surface. This is a green and clean synthesis approach for developing electronic materials for energy applications

  11. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  12. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  13. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  14. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  15. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  16. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  17. Surface photovoltage in heavily doped GaN:Si,Zn

    Science.gov (United States)

    McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

    2014-02-01

    In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

  18. Electron transport in heavily doped GdN

    Science.gov (United States)

    Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

    2018-01-01

    We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

  19. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  20. Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dong-Wook, E-mail: shindong37@skku.edu; Kim, Tae Sung; Yoo, Ji-Beom, E-mail: jbyoo@skku.edu

    2016-10-15

    Highlights: • Substitution doping is a promising method for opening the energy band gap of graphene. • Substitution doping with phosphorus in the graphene lattice has numerous advantage such as high band gap, low formation energy, and high net charge density compared to nitrogen. • V{sub dirac} of Inductively coupled plasma (ICP) and triphenylphosphine (TPP) treated graphene was −57 V, which provided clear evidence of n-type doping. • Substitutional doping of graphene with phosphorus is verified by the XPS spectra of P 2p core level and EELS mapping of phosphorus. • The chemical bonding between P and graphene is very stable for a long time in air (2 months). - Abstract: Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V{sub dirac} of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

  1. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  2. Mechanical properties of phosphorus-doped polysilicon films

    CERN Document Server

    Lee, S W; Kim, J P; Park, S J; Yi, S W; Cho, D I; Kim, J J

    1998-01-01

    Polysilicon films deposited by low pressure chemical vapor deposition (LPCVD) are the most widely used structural material in microelectromechanical systems (MEMS). However, the structural properties of LPCVD polysilicon films are known to vary significantly, depending on deposition conditions as well as post-deposition processes. This paper investigates the effects of phosphorus doping and texture on Young's modulus of polysilicon films. Polysilicon films are deposited at 585 .deg. C, 605 .deg. C, and 625 .deg. C to a thickness of 2 mu m. Specimens with varying phosphorus doping levels are prepared by the diffusion process at various temperatures and times using both POCl sub 3 and phosphosilicate glass (PSG) source. Texture is measured using an X-ray diffractometer. Young's modulus is estimated from the average values of the resonant frequencies measured from four-different size lateral resonators. Our results show that Young's modulus of diffusion doped polysilicon films decreases with increasing doping co...

  3. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  4. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  5. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  6. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  7. Electron Paramagnetic Resonance and X-ray Diffraction of Boron- and Phosphorus-Doped Nanodiamonds

    Science.gov (United States)

    Binh, Nguyen Thi Thanh; Dolmatov, V. Yu.; Lapchuk, N. M.; Shymanski, V. I.

    2017-11-01

    Powders of boron- and phosphorus-doped detonation nanodiamonds and sintered pellets of non-doped nanodiamond powders were studied using electron paramagnetic resonance and x-ray diffraction. Doping of detonation nanodiamond crystals with boron and phosphorus was demonstrated to be possible. These methods could be used to diagnose diamond nanocrystals doped during shock-wave synthesis.

  8. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

    2009-01-01

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

  9. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  10. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  11. Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

    2009-01-01

    Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

  12. Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-08-01

    We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

  13. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  14. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  15. One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

    2008-03-21

    We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

  16. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

  17. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

    2001-01-01

    The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

  18. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  19. Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

    International Nuclear Information System (INIS)

    Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

    2007-01-01

    Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

  20. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  1. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  2. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  3. p-type doping by platinum diffusion in low phosphorus doped silicon

    Science.gov (United States)

    Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

    2003-07-01

    In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

  4. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  5. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  6. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  7. Phytoextraction of nitrogen and phosphorus by crops grown in a heavily manured Dark Brown Chernozem under contrasting soil moisture conditions.

    Science.gov (United States)

    Agomoh, Ikechukwu; Hao, Xiying; Zvomuya, Francis

    2018-01-02

    Phytoextraction of excess nutrients by crops in soils with a long history of manure application may be a viable option for reducing the nutrient levels. This greenhouse study examined the effectiveness of six growth cycles (40 d each) of barley, canola, corn, oat, pea, soybean, and triticale at extracting nitrogen (N) and phosphorus (P) from a Dark Brown Chernozem that had received 180 Mg ha -1 (wet wt.) of beef cattle feedlot manure annually for 38 years. Moisture content during the study was maintained at either 100% or 50% soil field capacity (SFC). Repeated cropping resulted in an overall decrease in dry matter yield (DMY). The decrease in N and P uptake relative to Cycle 1 was fastest for the cereal grains and less pronounced for the two legumes. However, cumulative N uptake values were significantly greater for corn than the other crops under both moisture regimes. The reduction in soil N was greater under the 100% than the 50% SFC. These results indicate that repeated cropping can be a useful management practice for reducing N and P levels in a heavily manured soil. The extent of reduction will be greater for crops with high biomass production under adequate moisture supply.

  8. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  9. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  10. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  11. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  12. Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-02-11

    Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

  13. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  14. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.

    2009-11-11

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

  15. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  16. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  17. Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-02-01

    We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

  18. The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

    International Nuclear Information System (INIS)

    Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

    1992-01-01

    The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

  19. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    International Nuclear Information System (INIS)

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-01-01

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites

  20. Phosphorus doped TiO2 as oxygen sensor with low operating temperature and sensing mechanism

    International Nuclear Information System (INIS)

    Han, Zhizhong; Wang, Jiejie; Liao, Lan; Pan, Haibo; Shen, Shuifa; Chen, Jianzhong

    2013-01-01

    Nano-scale TiO 2 powders doped with phosphorus were prepared by sol–gel method. The characterization of the materials was performed by XRD, BET, FT-IR spectroscopy, Zeta potential measurement and XPS analysis. The results indicate that the phosphorus suppresses the crystal growth and phase transformation and, at the same time, increases the surface area and enhances the sensitivity and selectivity for the P-doped TiO 2 oxygen sensors. In this system, the operating temperature is low, only 116 °C, and the response time is short. The spectra of FT-IR and XPS show that the phosphorus dopant presents as the pentavalent-oxidation state in TiO 2 , further phosphorus can connect with Ti 4+ through the bond of Ti-O-P. The positive shifts of XPS peaks indicate that electron depleted layer of P-doped TiO 2 is narrowed compared with that of pure TiO 2 , and the results of Zeta potential illuminate that the density of surface charge carrier is intensified. The adsorptive active site and Lewis acid characteristics of the surface are reinforced by phosphorus doping, where phosphorus ions act as a new active site. Thus, the sensitivity of P-doped TiO 2 is improved, and the 5 mol% P-doped sample has the optimal oxygen sensing properties.

  1. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  2. Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

    International Nuclear Information System (INIS)

    Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

    2013-01-01

    Graphical abstract: - Highlights: • P-doped g-C 3 N 4 has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C 3 N 4 . • A postannealing treatment further enhanced the activity of P-doped g-C 3 N 4 . • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C 3 N 4 , which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry

  3. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  4. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  5. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  6. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  7. Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

    2007-01-01

    Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

  8. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  9. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  10. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  11. Electronic transport in heavily doped Ag/n-Si composite films

    Directory of Open Access Journals (Sweden)

    Clayton W. Bates Jr.

    2013-10-01

    Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

  12. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  13. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  14. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  15. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  16. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

    International Nuclear Information System (INIS)

    Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2017-01-01

    The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

  17. Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

    2011-01-01

    Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

  18. Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

    International Nuclear Information System (INIS)

    Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

    2006-01-01

    The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

  19. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  20. Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Bo, E-mail: willycb@163.com; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

    2017-01-01

    Highlights: • The phosphorus doped g-C{sub 3}N{sub 4} photocatalysts are synthesized by a co-pyrolysis procedure. • The crystal phase, morphology, and optical property of P doped g-C{sub 3}N{sub 4} are characterized. • The P doped g-C{sub 3}N{sub 4} photocatalysts show the improved photocatalytic activity. • The possible mechanism for enhanced photocatalytic activity is proposed. - Abstract: Phosphorus doped graphitic carbon nitride (g-C{sub 3}N{sub 4}) was easily synthesized using ammonium hexafluorophosphate (NH{sub 4}PF{sub 6}) as phosphorus source, and ammonium thiocyanate (NH{sub 4}SCN) as g-C{sub 3}N{sub 4} precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C{sub 3}N{sub 4} was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV–vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C{sub 3}N{sub 4} samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C{sub 3}N{sub 4} had a superior photocatalytic activity than that of pristine g-C{sub 3}N{sub 4}, attributing to the phosphorus atoms substituting carbon atoms of g-C{sub 3}N{sub 4} frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C{sub 3}N{sub 4}. Moreover, the tests of radical scavengers demonstrated that the holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) were the main active species for the

  1. Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions

    International Nuclear Information System (INIS)

    Zhou, Yuhong; Zhang, Daoli; Zhang, Jianbing; Miao, Xiangshui; Ye, Cong

    2014-01-01

    In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices

  2. Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

    Science.gov (United States)

    Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

    2017-05-01

    Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

  3. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  4. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

    International Nuclear Information System (INIS)

    Norris, C.B.; Barnes, C.E.

    1980-01-01

    The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

  5. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  6. n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    International Nuclear Information System (INIS)

    Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

    2007-01-01

    The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

  7. Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

    International Nuclear Information System (INIS)

    Jerome, D.

    1965-10-01

    The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

  8. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  9. In situ phosphorus-doped polysilicon for excitation and detection in micromechanical resonators

    NARCIS (Netherlands)

    Bouwstra, S.; Bouwstra, Siebe; de Weerd, Eddy L; Elwenspoek, Michael Curt

    Low-pressure chemical vapour deposited (LPCVD) in situ phosphorus-doped polysilicon films have been grown from a 60:30:300 sccm silane:phosphine (2000 ppm):nitrogen mass-flow mixture at 625°C under varied process conditions. Thickness uniformity, grain size, dopant concentration, resistivity,

  10. Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Kalish, R.; Uzan-Saguy, C.; Baskin, E.; Nesládek, M.; Koizumi, S.

    2003-01-01

    Roč. 199, č. 1 (2003), s. 82-86 ISSN 0031-8965 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z1010914 Keywords : photo-Hall measurements * CVD diamonnd * phosphorus doped Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.950, year: 2003

  11. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  12. Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

    International Nuclear Information System (INIS)

    Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

    2009-01-01

    Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

  13. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  14. Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

    International Nuclear Information System (INIS)

    Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

    1989-01-01

    When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

  15. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  16. Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

    Science.gov (United States)

    Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

    2017-11-01

    A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

  17. Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

    Science.gov (United States)

    Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

    2018-01-10

    We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

  18. "Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

    Science.gov (United States)

    Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

    2016-01-28

    Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

  19. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  20. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  1. Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

    Institute of Scientific and Technical Information of China (English)

    Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

    2017-01-01

    In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (~ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2% is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

  2. Optimal process parameters for phosphorus spin-on-doping of germanium

    Energy Technology Data Exchange (ETDEWEB)

    Boldrini, Virginia [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Carturan, Sara Maria, E-mail: sara.carturan@lnl.infn.it [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Maggioni, Gianluigi; Napolitani, Enrico [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Napoli, Daniel Ricardo [INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Camattari, Riccardo [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122, Ferrara (Italy); De Salvador, Davide [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy)

    2017-01-15

    Highlights: • Optimized protocol for the application of phosphorus spin-on-doping to Ge surface. • Homogeneous n-type Ge layers, fully electrically active, are obtained. • Crucial parameters for SOD curing are relative humidity, time and temperature. • Characterization of Ge loss from the surface into the SOD film by diffusion. • Spike annealing in standard tube chamber furnace are performed. - Abstract: The fabrication of homogeneously doped germanium layers characterized by total electrical activation is currently a hot topic in many fields, such as microelectronics, photovoltaics, optics and radiation detectors. Phosphorus spin-on-doping technique has been implemented on Ge wafers, by developing a protocol for the curing process and subsequent diffusion annealing for optimal doping. Parameters such as relative humidity and curing time turned out to affect the surface morphology, the degree of reticulation reached by the dopant source and the amount of dopant available for diffusion. After spike annealing in a conventional furnace, diffusion profiles and electrical properties have been measured. Ge loss from the surface during high-temperature annealing, due to diffusion into the source film, has been observed and quantified.

  3. First principles calculation of lithium-phosphorus co-doped diamond

    Directory of Open Access Journals (Sweden)

    Q.Y. Shao

    2013-03-01

    Full Text Available We calculate the density of states (DOS and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li and phosphorus (P by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The affection of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level and also may favorably regulate the diamond lattice distortion and expansion caused by the P atom.

  4. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  5. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  6. Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

    2011-09-14

    We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

  7. Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

    Directory of Open Access Journals (Sweden)

    T. Ferrus

    2012-06-01

    Full Text Available We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

  8. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  9. Phosphorus doped and defects engineered graphene for improved electrochemical sensing: synergistic effect of dopants and defects

    International Nuclear Information System (INIS)

    Chu, Ke; Wang, Fan; Tian, Ye; Wei, Zhen

    2017-01-01

    Heteroatom-doped graphene materials emerged as promising metal-free catalysts have recently attracted a growing interest in electrochemical sensing applications. However, their catalytic activity and sensing performances still need to be further improved. Herein, we reported the development of unique phosphorus (P)-doped and plasma-etched graphene (denoted as PG-E) as an efficient metal-free electrocatalyst for dopamine (DA) sensing. It was demonstrated that introducing both P-dopants and plasma-engineered defects in graphene could synergistically improve the activity toward electrocatalytic oxidation of DA by increasing the accessible active sites and promoting the electron transport capability. The resulting PG-E modified electrode showed exceptional DA sensing performances with low detection limit, high selectivity and good stability. These results suggested that the synergistic effect of dopants and defects might be an important factor for developing the advanced graphene-based metal-free catalysts for electrochemical sensing.

  10. Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

    Science.gov (United States)

    Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

    2018-01-01

    We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

  11. Unintended phosphorus doping of nickel nanoparticles during synthesis with TOP: a discovery through structural analysis.

    Science.gov (United States)

    Moreau, Liane M; Ha, Don-Hyung; Bealing, Clive R; Zhang, Haitao; Hennig, Richard G; Robinson, Richard D

    2012-09-12

    We report the discovery of unintentional phosphorus (P) doping when tri-n-octylphosphine (TOP) ligands are used in Ni nanoparticle synthesis, which is the most common method for monodisperse Ni nanoparticle synthesis. The nanoparticles appear pure face-centered cubic (fcc) Ni in X-ray diffraction despite the surprisingly high level (5 atomic %) of P. We find that the P doping follows a direct relationship with increased reaction time and temperature and that the P doping can be estimated with the degree of lattice expansion shown from a peak shift in the XRD spectrum. Through EXAFS modeling and density-functional (DFT) calculations of defect formation energies we find that the P atoms are preferentially located on the fcc lattice as substitutional dopants with oxidation state of zero. Magnetic and catalytic properties are shown to be greatly affected by this doping; DFT calculations show magnetization losses in the Ni system, as well as in Fe and Co systems. These findings are likely relevant for other metal syntheses that employ phosphine ligands.

  12. Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

    Science.gov (United States)

    Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

    2018-05-01

    Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

  13. Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

    Science.gov (United States)

    Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

    2014-02-01

    Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

  14. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    Science.gov (United States)

    Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

    2017-06-01

    Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  16. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  17. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

    2006-01-01

    Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements

  18. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  19. Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

    Science.gov (United States)

    Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

    2017-11-01

    Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

  20. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  1. Relevance of phosphorus incorporation and hydrogen removal for Si:P {delta}-doped layers fabricated using phosphine

    Energy Technology Data Exchange (ETDEWEB)

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y. [Centre for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052 (Australia)

    2005-05-01

    We present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P {delta}-doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities in these samples were determined from Hall effect measurements at 4 K sample temperature. An anneal to incorporate phosphorus atoms into substitutional lattice sites is critical to achieving full dopant activation after Si encapsulation by MBE. Whilst the presence of hydrogen can degrade the quality of the Si encapsulation layer, we show that it does not adversely impact the electrical activation of the phosphorus dopants. We discuss the relevance of our results to the fabrication of nano-scale Si:P devices. (copyright 2005 WILEY-VCH Verlag GmbH and C o. KGaA, Weinheim) (orig.)

  2. Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

    International Nuclear Information System (INIS)

    Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

    2007-01-01

    In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

  3. Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

    Science.gov (United States)

    Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

    2018-01-01

    Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

  4. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  5. Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

    Directory of Open Access Journals (Sweden)

    Chao Yan

    2017-01-01

    Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

  6. Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

    International Nuclear Information System (INIS)

    Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

    2004-01-01

    Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

  7. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  8. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  9. Potentiometric application of boron- and phosphorus-doped glassy carbon electrodes

    Directory of Open Access Journals (Sweden)

    ZORAN V. LAUSEVIC

    2001-03-01

    Full Text Available Acomparative study was carried out of the potentiometric application of boronand phosphorus-doped and undoped glassy carbon samples prepared at the same heat treatment temperature (HTT 1000°C. The electrochemical activities of the obtained electrode materials were investigated on the example of argentometric titrations. It was found that the electrochemical behaviour of the doped glassy carbon samples are very similar to a Sigri (undoped glassy carbon sample (HTT 2400°C. The experiments showed that the potentiometric response depends on the polarization mode, the nature of the sample, the pretreatment of the electrode surface, and the nature of the supporting electrolyte. The amounts of iodide, bromide, and of chloridewere determined to be 1.27 mg, 0.80 mg and 0.54 mg, respectively, with a maximum relative standard deviation of less than 1.1%. The obtained results are in good agreement with the results of comparative potentiometric titrations using a silver indicator electrode. The titrationmethod was applied to the indirect determination of pyridoxine hydrochloride, i.e., vitamin B6.

  10. Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

    Science.gov (United States)

    Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

    1994-01-01

    We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

  11. Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

    International Nuclear Information System (INIS)

    Seidel, Thomas E.; Goldberg, Alexander; Halls, Mat D.; Current, Michael I.

    2016-01-01

    Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si 9 H 12 truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF 3 , PCl 3 , and PBr 3 ) and disilane (Si 2 H 6 ). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF 3 and Si 2 H 6 reactions and featuring SiFH 3 as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactions for the deposition of four phosphorus atoms including lateral P–P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated

  12. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

    Science.gov (United States)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-05-07

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

  13. Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

    International Nuclear Information System (INIS)

    Xu Jiaxiong; Yao Ruohe

    2011-01-01

    Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

  14. Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

    Science.gov (United States)

    Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

    2018-01-01

    The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

  15. Effect of the defect-phosphorus atom complex interaction on the formation of the properties of neutron-doped silicon

    International Nuclear Information System (INIS)

    Kolesnik, L.I.; Lejferov, B.M.

    1984-01-01

    Radiation-induced defect annealing and changes in the concentration of substituting phosphorus atoms in silicon irradiated with different neutron doses have been studied by the low-temperature photoluminescence (PL) method at 4 K. Based on the PL spectrum character dependence on the fast-to-thermal neutron ration in a flux, series of lines and bands associated with the preferential formation of radiation-induced defects (within the 1.100 eV energy range) and with the presence of phosphorus impurity (1.15-1.12 eV) are identified. Some peculiarities are studied of the stage-by-stage annealing (250-500, 430-600, 600-800 deg C) of recombination-active centers (RAC) determining the radiation in the mentioned spectrum region. The relation between the RAC variations within the 1.12-1.15 eV range and the substituting phosphorus atom concentration in the 400-500 deg C temperature range is found. Activation energy of the substituting phosphorus atom concentration variation is estimated (approximately 0.5 eV). It is shown that the formation of defect-phosphorus complexes plays an important role in the formation of neutron-doped silicon properties, the presence of fast neutron in a flux being most importants

  16. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    International Nuclear Information System (INIS)

    Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-01-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

  17. Submicrosecond Q-Switching Er-Doped All-Fiber Ring Laser Based on Black Phosphorus

    Directory of Open Access Journals (Sweden)

    Yao Cai

    2017-01-01

    Full Text Available Black phosphorus (BP, a new two-dimensional (2D material, has been deeply developed for extensive applications in electronics and optoelectronics due to its similar physical structure to graphene and thickness dependent direct band gap. Here, we demonstrated a submicrosecond passive Q-switching Er-doped fiber laser with BP as saturable absorber (SA. The BP saturable absorber was fabricated by mechanical exfoliation method. By taking full advantage of the ultrafast relaxation time of BP-SA and careful design of compact ring cavity, we obtained stable Q-switching pulses output with a shortest duration as narrow as 742 ns. With increasing the pump power, the pulse repetition rate accreted gradually almost linearly from 9.78 to 61.25 kHz, and the pulse duration declined rapidly at lower pump power regime and retained approximate stationary at higher pump power regime from 3.05 to 0.742 μs. The experimental results indicate that BP-SA can be an effective SA for nanosecond Q-switching pulse generation.

  18. Nonlocal plasmonic response of doped and optically pumped graphene, MoS2, and black phosphorus

    Science.gov (United States)

    Petersen, René; Pedersen, Thomas Garm; Javier García de Abajo, F.

    2017-11-01

    Plasmons in two-dimensional (2D) materials have emerged as a new source of physical phenomena and optoelectronic applications due in part to the relatively small number of charge carriers on which they are supported. Unlike conventional plasmonic materials, they possess a large Fermi wavelength, which can be comparable with the plasmon wavelength, thus leading to unusually strong nonlocal effects. Here, we study the optical response of a selection of 2D crystal layers (graphene, MoS2, and black phosphorus) with inclusion of nonlocal and thermal effects. We extensively analyze their plasmon dispersion relations and focus on the Purcell factor for the decay of an optical emitter in close proximity to the material as a way to probe nonlocal and thermal effects, with emphasis placed on the interplay between temperature and doping. The results are based on tight-binding modeling of the electronic structure combined with the random-phase approximation response function in which the temperature enters through the Fermi-Dirac electronic occupation distribution. Our study provides a route map for the exploration and exploitation of the ultrafast optical response of 2D materials.

  19. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-05-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

  20. Phosphorus and Cu2+ removal by periphytic biofilm stimulated by upconversion phosphors doped with Pr3+-Li.

    Science.gov (United States)

    Zhu, Yan; Zhang, Jianhong; Zhu, Ningyuan; Tang, Jun; Liu, Junzhuo; Sun, Pengfei; Wu, Yonghong; Wong, Po Keung

    2018-01-01

    Upconversion phosphors (UCPs) can convert visible light into luminescence, such as UV, which can regulate the growth of microbes. Based on these fundamentals, the community composition of periphytic biofilms stimulated by UCPs doped with Pr 3+ -Li + was proposed to augment the removal of phosphorus (P) and copper (Cu). Results showed that the biofilms with community composition optimized by UCPs doped with Pr 3+ -Li + had high P and Cu 2+ removal rates. This was partly due to overall bacterial and algal abundance and biomass increases. The synergistic actions of algal, bacterial biomass and carbon metabolic capacity in the Pr-Li stimulated biofilms facilitated the removal of P and Cu 2+ . The results show that the stimulation of periphytic biofilms by lanthanide-doped UCPs is a promising approach for augmenting P and Cu 2+ removal. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  2. Doping of monocrystalline silicon with phosphorus by means of neutron irradiation at the IEA-R1 research reactor

    International Nuclear Information System (INIS)

    Carbonari, A.W.; Puget, M.A.C.

    1990-11-01

    The first neutron irradiation experiments with monocrystal silicon in the IEA-R1 research reactor of IPEN are related. The silicon is irradiated with phosphorus producing a N type semiconductor with a very small resistivity variation throughout the crystal volume. The neutrons induce nuclear reactions in Si-30 isotope and these atoms are then transformed in to phosphorous atoms. This process is known as Neutron Transmutation Doping. In order to irradiate the silicon crystals in the reactor, a specific device has been constructed, and it permits the irradiation of up to 2.5'' diameter monocrystals. (author)

  3. Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

    Science.gov (United States)

    Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

    2018-04-01

    Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

  4. Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Renyu; Trzynadlowski, Bart; Dunham, Scott T. [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)

    2014-02-07

    In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

  5. A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser

    Directory of Open Access Journals (Sweden)

    Tianxian Feng

    2016-11-01

    Full Text Available We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP nanosheets were prepared via a liquid exfoliation approach exploiting N-methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI, a piece of BP–PI film was obtained after evaporating the mixture in a petri dish. The BP–PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP–PI film can act as a promising nonlinear optical device for laser applications.

  6. Pomelo peels-derived porous activated carbon microsheets dual-doped with nitrogen and phosphorus for high performance electrochemical capacitors

    Science.gov (United States)

    Wang, Zhen; Tan, Yongtao; Yang, Yunlong; Zhao, Xiaoning; Liu, Ying; Niu, Lengyuan; Tichnell, Brandon; Kong, Lingbin; Kang, Long; Liu, Zhen; Ran, Fen

    2018-02-01

    In this work, biomass pomelo peel is used to fabricate the porous activated carbon microsheets, and diammonium hydrogen phosphate (DHP) is employed to dual-dope carbon with nitrogen and phosphorus elements. With the benefit of DHP inducement and dual-doping of nitrogen and phosphorus, the prepared carbon material has a higher carbon yield, and exhibits higher specific surface area (about 807.7 m2/g), and larger pore volume (about 0.4378 cm3/g) with hierarchically structure of interconnected thin microsheets compared to the pristine carbon. The material exhibits not only high specific capacitance (240 F/g at 0.5 A/g), but also superior cycling performance (approximately 100% of capacitance retention after 10,000 cycles at 2 A/g) in 2 M KOH aqueous electrolyte. Furthermore, the assembled symmetric electrochemical capacitor in 1 M Na2SO4 aqueous electrolyte exhibits a high energy density of 11.7 Wh/kg at a power density of 160 W/kg.

  7. Spectroscopic studies of the origin of radiation-induced degradation in phosphorus-doped optical fibers and preforms

    International Nuclear Information System (INIS)

    Origlio, G.; Messina, F.; Cannas, M.; Girard, S.; Boukenter, A.; Ouerdane, Y.

    2010-01-01

    In this paper, we study the radiation-induced point defects related to the phosphorus element that is commonly used to improve the optical properties of silica-based glasses but is responsible of a dramatic increase in their radiation sensitivity. To this aim, the influence of x-ray irradiation on prototype phosphorus-doped canonical fibers and their related preforms was investigated by in situ radiation induced attenuation (RIA), optical absorption, and electron spin resonance (ESR) spectroscopy. The RIA spectra in the (1.5-5 eV) range, can be explained by the presence of at least three absorption bands induced by radiation exposure. Additionally the X-dose dependence of such bands was studied. The main responsible defect for these absorption peaks was the phosphorus oxygen hole center (POHC) center, whose presence was also detected by ESR measurements both in irradiated fibers and preforms, together with the lineshape of the so called P2 defect. Correlations between the RIA bands and the ESR results allow us to assign the 2.3 and 3.0 eV bands to POHCs and to propose a scheme for the simultaneous creation of POHC and P2 defects after x-ray exposure.

  8. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  9. Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

    Energy Technology Data Exchange (ETDEWEB)

    Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

    2003-05-15

    We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

  10. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  11. Influence of lead-doped hydroponic medium on the adsorption/bioaccumulation processes of lead and phosphorus in roots and leaves of the aquatic macrophyte Eicchornia crassipes.

    Science.gov (United States)

    Espinoza-Quiñones, Fernando R; Módenes, Aparecido Nivaldo; de Oliveira, Ana Paula; Trigueros, Daniela Estelita Goes

    2013-11-30

    In this study, lead bioaccumulation by the living free-floating aquatic macrophyte Eicchornia crassipes in different hydroponic conditions with variations in phosphorus and lead concentrations was investigated. A set of growth experiments in hydroponic media doped with lead and phosphorus within a wide concentration range was performed for 32 days in a greenhouse. All experiments were carried out with periodic replacement of all nutrients and lead. The concentration of lead and nutrients in biomass was determined by synchrotron radiation-excited total reflection X-ray fluorescence. By increasing the lead concentration in the medium, a reduction in biomass growth was observed, but a higher phosphorus retention in roots and leaves was shown at lower lead concentrations. In addition, an increase in the amount of bioaccumulated lead and phosphorus in roots was observed for higher lead and phosphorus concentrations in the medium, reaching saturation values of 4 mg Pb g(-1) and 7 mg P g(-1), respectively. Four non-structural kinetic models were tested, to represent the bioaccumulation of lead and phosphorus in roots. Pseudo-second order and irreversible kinetic models described the lead bioaccumulation data well, however, an irreversible kinetic model better fitted phosphorus uptake in roots. Copyright © 2013 Elsevier Ltd. All rights reserved.

  12. Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

    2018-07-01

    Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

  13. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  14. Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

    2014-02-15

    Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

  15. Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

    International Nuclear Information System (INIS)

    Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

    2014-01-01

    Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

  16. Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

    Science.gov (United States)

    Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

    2018-03-01

    The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.

  17. High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

    Science.gov (United States)

    Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

    2015-08-15

    We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

  18. Phosphorus-doped thin silica films characterized by magic-angle spinning nuclear magnetic resonance spectroscopy

    DEFF Research Database (Denmark)

    Jacobsen, H.J.; Skibsted, J.; Kristensen, Martin

    2001-01-01

    Magic-angle spinning nuclear magnetic resonance spectra of 31P and 29Si have been achieved for a thin silica film doped with only 1.8% 31P and deposited by plasma enhanced chemical vapor deposition on a pure silicon wafer. The observation of a symmetric 31P chemical shift tensor is consistent...

  19. A highly efficient electrocatalyst for oxygen reduction reaction: phosphorus and nitrogen co-doped hierarchically ordered porous carbon derived from an iron-functionalized polymer

    Science.gov (United States)

    Deng, Chengwei; Zhong, Hexiang; Li, Xianfeng; Yao, Lan; Zhang, Huamin

    2016-01-01

    Heteroatom-doped carbon materials have shown respectable activity for the oxygen reduction reaction (ORR) in alkaline media. However, the performances of these materials are not satisfactory for energy conversion devices, such as fuel cells. Here, we demonstrate a new type of phosphorus and nitrogen co-doped hierarchically ordered porous carbon (PNHOPC) derived from an iron-functionalized mesoporous polymer through an evaporation-induced self-assembly process that simultaneously combines the carbonization and nitrogen doping processes. The soft template and the nitrogen doping process facilitate the formation of the hierarchically ordered structure for the PNHOPC. The catalyst possesses a large surface area (1118 cm2 g-1) and a pore volume of 1.14 cm3 g-1. Notably, it exhibits excellent ORR catalytic performance, superior stability and methanol tolerance in acidic electrolytes, thus making the catalyst promising for fuel cells. The correlations between the unique pore structure and the nitrogen and phosphorus configuration of the catalysts with high catalytic activity are thoroughly investigated.Heteroatom-doped carbon materials have shown respectable activity for the oxygen reduction reaction (ORR) in alkaline media. However, the performances of these materials are not satisfactory for energy conversion devices, such as fuel cells. Here, we demonstrate a new type of phosphorus and nitrogen co-doped hierarchically ordered porous carbon (PNHOPC) derived from an iron-functionalized mesoporous polymer through an evaporation-induced self-assembly process that simultaneously combines the carbonization and nitrogen doping processes. The soft template and the nitrogen doping process facilitate the formation of the hierarchically ordered structure for the PNHOPC. The catalyst possesses a large surface area (1118 cm2 g-1) and a pore volume of 1.14 cm3 g-1. Notably, it exhibits excellent ORR catalytic performance, superior stability and methanol tolerance in acidic

  20. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  1. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  2. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  3. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  4. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  5. Effect of phosphorus doping on electronic structure and photocatalytic performance of g-C{sub 3}N{sub 4}: Insights from hybrid density functional calculation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianjun, E-mail: jjliu@chnu.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China)

    2016-07-05

    Graphitic carbon nitride (g-C{sub 3}N{sub 4}), as a promising visible-light photocatalyst, has wide applications on water splitting, pollutants decomposition and CO{sub 2} reduction. Herein, we investigated the electronic and optical property of pure and P doped g-C{sub 3}N{sub 4} using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional method. The valuable features such as, the band structure, density of states, band decomposed charged density and optical absorption were computed to explore the role of phosphorus substitute N2 and C1 sites of g-C{sub 3}N{sub 4}.The results indicated that pure g-C{sub 3}N{sub 4} has an indirect band gap of about 2.73 eV, which is in good agreement with the experimental value. By doping P into N2 and C1 sites of g-C{sub 3}N{sub 4}, the band gap reduces to 2.03 and 2.22 eV, respectively. Optical absorption intensity of g-C{sub 3}N{sub 4} had a greatly enhancement in the visible region by doping P. Though narrowing the energy band of g-C{sub 3}N{sub 4} by doping P, conduction band and valance band edge of g-C{sub 3}N{sub 4} doping system still had enough potential to split water. Therefore, phosphorus doped g-C{sub 3}N{sub 4} is effective strategy to improve visible light response photocatalytic performance of g-C{sub 3}N{sub 4}. - Highlights: • For the first time, calculated band structure of P doped g-C{sub 3N}4 by Hybrid DFT method. • P doped g-C{sub 3N}4 narrowed band gap and enhanced optical absorption. • P doped g-C3{sub N4} enhanced the oxidation capacity of the valence band edge.

  6. A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon

    Science.gov (United States)

    Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru

    1989-01-01

    We have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of thermal donors (TD's) currently studied so far. Our results have shown that both families of thermal donors exhibit qualitatively the same kinetic behavior. Namely, as the annealing time increases, their ionization energy of levels continuously decrease with their densities increasing until the maxima and then become constant with their densities decreasing. However, there are significantly quantitative differences between the both families; NTD's have shallower levels, considerably smaller generation rates, and higher thermal stability than TD's. Sufficiently prolonged annealing for more than 105 min around 450 °C or short donor-killing annealing for 20 min at 650 °C completely annihilates TD's, leaving only NTD's, of which the most stable and therefore most shallow species have been suggested by our Hall measurements to have donor levels at 0.04 and 0.09 eV below the conduction-band edge. The density of interstitial oxygen still continues to decrease even after prolonged annealing for more than 105 min, where NTD's are present in a stable condition in a concentration of 1×1015 cm-3. NTD's may correlate with the NL10 electron paramagnetic resonance center because of similarities in their generation kinetics. We have suggested a hypothesis that NTD's have similar defect structures as TD's and that an unknown nucleus involved in the core of NTD's plays an essential role in lowering their ionization energy of levels and generation rates and also in stabilizing their donor activity.

  7. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  8. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  9. Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

    2018-03-05

    Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

  10. Phosphorus, and nitrogen co-doped carbon dots as a fluorescent probe for real-time measurement of reactive oxygen and nitrogen species inside macrophages.

    Science.gov (United States)

    Gong, Yunqian; Yu, Bin; Yang, Wen; Zhang, Xiaoling

    2016-05-15

    Phosphorus and nitrogen doped carbon dots (PN-CDs) were conveniently prepared by carbonization of adenosine-5'-triphosphate using a hydrothermal treatment. The PN-CDs with P/C atomic ratio of ca. 9.2/100 emit blue luminescence with high quantum yields of up to 23.5%. The PN-CDs were used as a novel sensing platform for live cell imaging of reactive oxygen species (ROS) and reactive nitrogen species (RNS), including ClO(-), ONOO(-), and NO in macrophages. The nanosensor design is based on our new finding that the strong fluorescence of the PN-CDs can be sensitively and selectively quenched by ROS and RNS both in vitro and in vivo. These results reveal that the PN-CDs can serve as a sensitive sensor for rapid imaging of ROS and RNS signaling with high selectivity and contrast. Copyright © 2016 Elsevier B.V. All rights reserved.

  11. One-pot and ultrafast synthesis of nitrogen and phosphorus co-doped carbon dots possessing bright dual wavelength fluorescence emission

    Science.gov (United States)

    Sun, Xiangcheng; Brückner, Christian; Lei, Yu

    2015-10-01

    Very brief microwave heating of aniline, ethylene diamine, and phosphoric acid in water at ambient pressure generated nitrogen and phosphorus co-doped carbon dots (N,P-CDs) that exhibit bright dual blue (centred at 450 nm; 51% quantum yield) and green (centred at 510 nm, 38% quantum yield) fluorescence emission bands. The N,P-CDs were characterized using TEM, XRD, XPS, IR, UV-vis, and fluorescence spectroscopy, demonstrating their partially crystalline carbon, partially amorphous structures, and the incorporation of O, N, and P into the carbogenic scaffold. The N,P-CDs demonstrated excitation-dependent and nearly pH-independent emission properties. The unique dual emission properties lay the foundation for the use of N,P-CDs in ratiometric sensing applications.Very brief microwave heating of aniline, ethylene diamine, and phosphoric acid in water at ambient pressure generated nitrogen and phosphorus co-doped carbon dots (N,P-CDs) that exhibit bright dual blue (centred at 450 nm; 51% quantum yield) and green (centred at 510 nm, 38% quantum yield) fluorescence emission bands. The N,P-CDs were characterized using TEM, XRD, XPS, IR, UV-vis, and fluorescence spectroscopy, demonstrating their partially crystalline carbon, partially amorphous structures, and the incorporation of O, N, and P into the carbogenic scaffold. The N,P-CDs demonstrated excitation-dependent and nearly pH-independent emission properties. The unique dual emission properties lay the foundation for the use of N,P-CDs in ratiometric sensing applications. Electronic supplementary information (ESI) available: Detailed experimental section, XRD, FTIR, explosive sensing and the applications results. See DOI: 10.1039/c5nr05549k

  12. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  13. Study of the recrystallization mechanisms of ultra-high purity iron doped with carbon, manganese and phosphorus; Etude des mecanismes de recristallisation dans le fer de ultra-haute purete dope en carbone, manganese et phosphore

    Energy Technology Data Exchange (ETDEWEB)

    Lesne, L.

    2000-07-04

    High purity steels have the potential to improve deep drawing properties for automotive applications. Understanding the influence of the chemical composition on the recrystallization mechanisms and on texture development should help to improve their properties. We have studied the influence of 10 ppm of carbon, 1000 ppm of manganese and 120 ppm of phosphorus on the recrystallization mechanisms of ultra-high purity iron (UHP iron > 99.997%). For this purpose we used 4 materials: one undoped (UHP), one doped with C, one doped with C, Mn and one doped With C, Mn, P. In order to restrict grain coarsening in the hot strips, hot rolling was performed in the ferritic region, in one pass of 80% thickness reduction. The hot bands were then fully recrystallized but exhibited non-isotropic textures, with in particular an intense Goss [110]<001> component for the doped materials. The hot-bands were subsequently cold rolled down to a thickness of 0.8 mm corresponding to a thickness reduction of 80%, and then continuously annealed at 10 deg. C/s. The recrystallization kinetics are delayed with the addition of doping elements. In particular, the incubation time for nucleation is shifted towards higher temperatures while the recrystallization velocity increases. The textures of the fully recrystallized materials exhibit a strong Goss component prejudicial for deep drawing properties. We have established that this component can only appear if coarse grains and carbon in solid solution were simultaneously present in the material before deformation. Characterisation of the cold deformed state enabled us to evaluate the energy stored during deformation as a function of the material composition and the grain orientation: - the overall stored energy increases with the doping elements content. - the stored energy in the {gamma} fibre grains is greater than in the {alpha} fibre grains: 30 J/mol for the {gamma} fibre instead of 5 J/mol for the {alpha} fibre, in the undoped UHP iron. In the

  14. An “on-off-on” fluorescent nanoprobe for recognition of chromium(VI) and ascorbic acid based on phosphorus/nitrogen dual-doped carbon quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Xiaojuan, E-mail: gxj1124@sxu.edu.cn [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China); Liu, Yang; Yang, Zhenhua; Shuang, Shaomin [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China); Zhang, Zeyu [Faculty of Science, Beijing University of Chemical Technology, Beijing, 100029 (China); Dong, Chuan, E-mail: dc@sxu.edu.cn [Institute of Environmental Science, School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006 (China)

    2017-05-22

    Chromium (VI) [Cr(VI)] is a harsh environmental contaminates and has been proved to be highly toxic, carcinogenic and mutagenic. Therefore, developing an inexpensive, good selective and highly sensitive nanoprobe for the detection of Cr(VI) is in urgent demand. Recently, the highly fluorescent carbon quantum dots (CQDs) have been successfully utilized as efficient fluorescent nanoprobes for the detection of ions, pH and molecular substances. In this work, an “on-off” fluorescence phosphorus/nitrogen dual-doped CQDs (PNCQDs) probe was developed for the determination of Cr(VI) based on inner filter effect (IFE). The proposed PNCQDs nanoprobe shows its distinct merits of simplicity, convenience, fast implementation, good selectivity and high sensitivity towards Cr(VI), allowing its potential application in the determination of Cr(VI) in environment and biosystem. In addition, the chelation effect of the functional groups in reductant and Cr(VI), and the easy-conversion of Cr(VI) to reduced states (i.e. Cr(III) and Cr(0)) by reductants makes the minimization of IFE with a concomitant recovery of PNCQDs fluorescence possible. Hence, the PNCQDs/Cr(VI) hybrid was used as an “off-on” fluorescence probe for sensing ascorbic acid (AA), which is a model reductant. For the detection of Cr(VI), the linear range and the limit of detection achieved were 1.5–30 μmol/L and 23 nmol/L, respectively. For the detection of AA, the linear range and the limit of detection obtained were 5.0–200 μmol/L and 1.35 μmol/L, respectively. The as-constructed “on-off-on” PNCQDs fluorescent nanoprobe was successfully applied for detecting Cr(VI) and AA in biosystem. Furthermore, the as-constructed fluorescent sensing system was successfully applied to the analyses of AA in fresh fruits and in commercial fruit juices with satisfactory results. - Highlights: • Fast synthesis of phosphorus/nitrogen dual-doped CQDs (PNCQDs) by acid-base neutralization carbonization method.

  15. Hydrogen in oxygen-free, phosphorus-doped copper - Charging techniques, hydrogen contents and modelling of hydrogen diffusion and depth profile

    Energy Technology Data Exchange (ETDEWEB)

    Martinsson, Aasa [Swerea KIMAB, Kista (Sweden); Sandstroem, Rolf [Swerea KIMAB, Kista (Sweden); Div. of Materials Science and Engineering, KTH Royal Institute of Technology, Stockholm (Sweden); Lilja, Christina [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden)

    2013-01-15

    In Sweden spent nuclear fuel is planned to be disposed of by encapsulating in cast iron inserts protected by a copper shell. The copper can be exposed to hydrogen released during corrosion processes in the inserts. If the hydrogen is taken up by the copper, it could lead to hydrogen embrittlement. Specimens from oxygen-free copper have been hydrogen charged using two different methods. The purpose was to investigate how hydrogen could be introduced into copper in a controlled way. The thermal charging method resulted in a reduction of the initial hydrogen content. After electrochemical charging of cylindrical specimens, the measured hydrogen content was 2.6 wt. ppm which should compared with 0.6 wt. ppm before charging. The retained hydrogen after two weeks was reduced by nearly 40%. Recently the paper 'Hydrogen depth profile in phosphorus-doped, oxygen-free copper after cathodic charging' (Martinsson and Sandstrom, 2012) has been published. The paper describes experimental results for bulk specimens as well as presenting a model. Almost all the hydrogen is found to be located less than 100 {mu}m from the surface. This model is used to interpret the experimental results on foils in the present report. Since the model is fully based on fundamental equations, it can be used to analyse what happens in new situations. In this report the effect of the charging intensity, the grain size, the critical nucleus size for hydrogen bubble formation as well as the charging time are analysed.

  16. Hydrogen in oxygen-free, phosphorus-doped copper-Charging techniques, hydrogen contents and modelling of hydrogen diffusion and depth profile

    International Nuclear Information System (INIS)

    Martinsson, Aasa; Sandstroem, Rolf; Lilja, Christina

    2013-01-01

    In Sweden spent nuclear fuel is planned to be disposed of by encapsulating in cast iron inserts protected by a copper shell. The copper can be exposed to hydrogen released during corrosion processes in the inserts. If the hydrogen is taken up by the copper, it could lead to hydrogen embrittlement. Specimens from oxygen-free copper have been hydrogen charged using two different methods. The purpose was to investigate how hydrogen could be introduced into copper in a controlled way. The thermal charging method resulted in a reduction of the initial hydrogen content. After electrochemical charging of cylindrical specimens, the measured hydrogen content was 2.6 wt. ppm which should compared with 0.6 wt. ppm before charging. The retained hydrogen after two weeks was reduced by nearly 40%. Recently the paper 'Hydrogen depth profile in phosphorus-doped, oxygen-free copper after cathodic charging' (Martinsson and Sandstrom, 2012) has been published. The paper describes experimental results for bulk specimens as well as presenting a model. Almost all the hydrogen is found to be located less than 100 μm from the surface. This model is used to interpret the experimental results on foils in the present report. Since the model is fully based on fundamental equations, it can be used to analyse what happens in new situations. In this report the effect of the charging intensity, the grain size, the critical nucleus size for hydrogen bubble formation as well as the charging time are analysed

  17. Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1983-01-01

    of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

  18. Electrical activation of phosphorus in silicon

    International Nuclear Information System (INIS)

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

    2003-01-01

    Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

  19. Effects of phosphorus-doping on energy band-gap, structural, surface, and photocatalytic characteristics of emulsion-based sol-gel derived TiO{sub 2} nano-powder

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh, Ibram, E-mail: ibramganesh@arci.res.in

    2017-08-31

    Highlights: • Reported a novel route to synthesize high specific surface area P-doped TiO{sub 2} nano-powder photocatalysts. • Established methylene blue dye-sensitization mechanism of TiO{sub 2} photocatalyst. • Established the effects of methylene blue adsorption on the surface, structural and photocatalytic activity of P-doped TiO{sub 2}. • Established true quantum efficiency determination method for TiO{sub 2} photocatalysis. - Abstract: Different amounts of phosphorus (P)-doped TiO{sub 2} (PDT) nano-powders (P = 0–10 wt.%) were synthesized by following a new emulsion-based sol-gel (EBSG) route and calcined at 400 °C–800 °C for 6 h. These calcined PDT powders were then thoroughly characterized by means of XRD, XPS, SEM, FT-IR, FT-Raman, DRS, BET surface area, zeta-potential, cyclic-voltammetry and photocatalytic evaluation using methylene blue (MB) as a model-pollutant and established the effects of phosphorous doping on structural, surface, band-gap energy, and photocatalytic characteristics of TiO{sub 2} nano-powder formed in EBSG route. The characterization results suggest that the EBSG derived TiO{sub 2} nano-powder after calcination at 400 °C for 6 h is in the form of anatase phase when it was doped with <8 wt.% P, and it is in the amorphous state when doped with >8 wt.% P. Furthermore, these EBSG derived PDT powders own high negative zeta-potentials, high specific surface areas (up to >250 m{sup 2}/g), and suitable band-gap energies (<3.34 eV). Surprisingly, these PDT powders exhibit very high MB adsorption (up to 50%) from its aqueous 0.01 mM, 0.02 mM and 0.03 mM solutions during 30 min stirring in the dark, whereas, the commercial Degussa P-25 TiO{sub 2} nano-powder shows no adsorption. Among various photocatalysts investigated in this study, the 1 wt.% P-doped TiO{sub 2} nano-powder formed in EBSG route exhibited the highest photocatalytic activity for MB degradation reaction.

  20. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

    International Nuclear Information System (INIS)

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-01-01

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101 ¯ 0〉 and 〈101 ¯ 3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices

  1. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  2. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  3. Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

    International Nuclear Information System (INIS)

    Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

    2006-01-01

    Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

  4. Multilevel structures of Li3V2(PO4)3/phosphorus-doped carbon nanocomposites derived from hybrid V-MOFs for long-life and cheap lithium ion battery cathodes

    Science.gov (United States)

    Wang, Zhaoyang; He, Wen; Zhang, Xudong; Yue, Yuanzheng; Liu, Jinhua; Zhang, Chuanjiang; Fang, Leyong

    2017-10-01

    The Li3V2(PO4)3/phosphorus-doped carbon (LVP/P-C) nanocomposites with multilevel structures (such as spheroidal, foam, prism and flower-like structures) are synthesized via one-pot in-situ synthesis using hybrid vanadium metal-organic frameworks (V-MOFs) as precursor. The structure and morphology of the LVP/P-C nanocomposites were characterized by scanning electron microscopy, transmission electron microscopy, Raman, X-ray diffraction and element mapping. The results show that the multilevel structures are generated from the assemblies of the hybrid surfactant templates in the glass fiber drawing wastewater (GFDW) and the hybrid V-MOFs. The structure of LVP/P-C nanocomposite is controlled by V-MOFs. The nanocomposites exhibit a long service life, a discharge capacity of 65 mA h g-1 at 10 C with 90% capacity retention after 1100 cycles. The high cycling stability is attributed to the multilevel structures, which is ideal for making rechargeable lithium ion batteries. More importantly, our results have demonstrated that GFDW can be transformed into treasure of multilevel structure nanocomposites for cheap Li ion batteries.

  5. Oxygen reduction reaction of (C-PCTNB@CNTs): A nitrogen and phosphorus dual-doped carbon electro-catalyst derived from polyphosphazenes

    Science.gov (United States)

    Dar, Sami Ullah; Ud Din, Muhammad Aizaz; Hameed, Muhammad Usman; Ali, Shafqat; Akram, Raheel; Wu, Zhanpeng; Wu, Dezhen

    2018-01-01

    This research describes the synthesis of a novel type of poly [cyclotriphosphazene-co-1,3,5-triol nitrobenzene] (PCTNB) microspheres with uniform size and diameter of more than 2 μm having well characterization. These microspheres are further used to wrap the CNTs by a facile route using template based non-covalent method to form PCTNB@CNTs composite. This composite is further well analyzed before it is subjected to pyrolysis. The direct carbonization of the PCTNB@CNTs is performed at 600 °C at a rate of 5 °C/min under N2 atmosphere to render the N, P, O doped carbonized PCTNB@CNTs having enhanced electronic features to be applied as an ORR electrocatalysts in fuel cells accompanied by TEM, XPS, Raman, FT-IR, TGA and BET analyses. Here, we have designed a metal-free, N, P, O doped (C-PCTNB@CNTs) electro-catalyst which exhibit significantly high ORR performance in acidic PEM cells showing much higher onset potential of (0.94 V) and half-wave potential of (0.85 V) with electron transfer number (n) 3.9 at 0.4-0.7 V as compared to other non-metallic electro-catalysts. Thus, (C-PCTNB@CNTs) is a metal-free, methanol tolerant carbon-based ORR catalyst, and it opens up new avenues for clean energy generation for affordable and durable fuel cells.

  6. HDN and HDS of different gas oils derived from Athabasca bitumen over phosphorus-doped NiMo/{gamma}-Al{sub 2}O{sub 3} carbides

    Energy Technology Data Exchange (ETDEWEB)

    Sundaramurthy, V.; Dalai, A.K. [Catalysis and Chemical Reaction Engineering Laboratories, Department of Chemical Engineering, University of Saskatchewan, Saskatoon, Sask. S7N 5A9 (Canada); Adjaye, J. [Syncrude Edmonton Research Centre, Edmonton, Alta. T6N 1H4 (Canada)

    2006-10-26

    A series of phosphorous-doped {gamma}-Al{sub 2}O{sub 3} supported Ni-Mo bimetallic carbide catalysts (PNiMo{sub 2}C/Al{sub 2}O{sub 3}) with 0-4.5wt.% Ni, 13wt.% Mo and 2.5wt.% P were synthesized and characterized by elemental analysis, pulsed CO chemisorption, surface area measurement, X-ray diffraction (XRD), near-edge X-ray absorption fine structure (NEXAFS), DRIFT spectroscopy of CO adsorption and H{sub 2} temperature programmed reduction. XRD indicated the formation of pure {beta}-Mo{sub 2}C phase in these catalysts, whereas the near edge X-ray absorption fine structure of C K-edge confirmed the formation of carbidic carbons. DRIFT spectra of adsorbed CO revealed that Ni or P addition to Mo{sub 2}C/Al{sub 2}O{sub 3} catalyst not only increases the number of surface Mo sites, but also promotes the reducibility of Mo. The partial sulfidation of Mo{sub 2}C phase in the presence of H{sub 2}S/H{sub 2} gas mixture at 370{sup o}C was evidenced by DRIFTS of adsorbed CO. The HDN and HDS activities of these PNiMo{sub 2}C/Al{sub 2}O{sub 3} catalysts were performed in a trickle bed reactor using light gas oil (LGO) and heavy gas oil (HGO) derived from Athabasca bitumen at 8.8MPa and compared with the unpromoted Mo carbide (Mo{sub 2}C/Al{sub 2}O{sub 3}), P doped Mo carbide (PMo{sub 2}C/Al{sub 2}O{sub 3}) and Ni promoted Mo carbide (NiMo{sub 2}C/Al{sub 2}O{sub 3}). The P doped Ni-Mo bimetallic carbide catalysts showed enhanced HDN activity compared to the Mo{sub 2}C/Al{sub 2}O{sub 3}, NiMo{sub 2}C/Al{sub 2}O{sub 3} and PMo{sub 2}C/Al{sub 2}O{sub 3} catalysts. The maximum N and S conversions, respectively, were obtained over PNiMo{sub 2}C/Al{sub 2}O{sub 3} and NiMo{sub 2}C/Al{sub 2}O{sub 3} catalysts containing 2.5wt.% Ni. (author)

  7. A simple chemical method for the separation of phosphorus interfering the trace element determinations by neutron activation analysis in high doped silicon wafers

    International Nuclear Information System (INIS)

    Wagler, H.; Flachowsky, J.

    1986-01-01

    Neutron activation analysis is one of the most available method for the determination of trace elements, but in the case of P-doped silicon wafers the 32 P-activity interferes the gamma spectrometry. It is not possible to determine the trace elements without chemical manipulations. On the other hand, time consuming chemical separations should be avoided. Therefore, a simple and rapid P-separation method has to be developed, in which the following twelve trace elements should be taken into consideration: Ag, As, Au, Co, Cr, Cu, Fe, Mo, Na, Sb, W, and Zn. After acid oxidative dissolution of the activated sample, P is present as phosphate ion. The phosphate ion is removed by precipitation as BiPO 4 . (author)

  8. Flexible phosphorus doped carbon nanosheets/nanofibers: Electrospun preparation and enhanced Li-storage properties as free-standing anodes for lithium ion batteries

    Science.gov (United States)

    Li, Desheng; Wang, Dongya; Rui, Kun; Ma, Zhongyuan; Xie, Ling; Liu, Jinhua; Zhang, Yu; Chen, Runfeng; Yan, Yan; Lin, Huijuan; Xie, Xiaoji; Zhu, Jixin; Huang, Wei

    2018-04-01

    The emerging wearable and foldable electronic devices drive the development of flexible lithium ion batteries (LIBs). Carbon materials are considered as one of the most promising electrode materials for LIBs due to their light weight, low cost and good structural stability against repeated deformations. However, the specific capacity, rate capability and long-term cycling performance still need to be improved for their applications in next-generation LIBs. Herein, we report a facile approach for immobilizing phosphorus into a large-area carbon nanosheets/nanofibers interwoven free-standing paper for LIBs. As an anode material for LIBs, it shows high reversible capacity of 1100 mAh g-1 at a current density of 200 mA g-1, excellent rate capabilities (e.g., 200 mAh g-1 at 20,000 mA g-1). Even at a high current density of 1000 mA g-1, it still maintains a superior specific capacity of 607 mAh g-1 without obvious decay.

  9. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  10. 2 mm range ESR of the transmutation-produced phosphorus impurity in 6HSiC

    International Nuclear Information System (INIS)

    Kalabukhova, E.N.; Lukin, S.N.; Mokhov, E.N.

    1993-01-01

    Phosphorus impurity is introduced into 6HSiC monocrystals via neutron transmutation doping. Parameters of ESR two spectra referred to ESR spectra of separated phosphorus atoms in the lattice cubic and hexagonal position are detected and determined in the specimens at T=4.2 K. variation dynamics of ESR spectra of phosphorus and nitrogen within 4.2-73 K temperature range is studied. Ionization energies of phosphorus atoms are determined to be less, than those of nitrogen atoms, and ionization energy of phosphorus atoms in hexagonal position is higher, than that of phosphorus atoms in cubic position

  11. Geochemical and hydrodynamic phosphorus retention mechanisms in lowland catchments

    NARCIS (Netherlands)

    van der Grift, B.

    2017-01-01

    The release of phosphorus (P) to surface water from heavily fertilised agricultural fields is of major importance for surface water quality. The research reported in this thesis examined the role of geochemical and hydrodynamic processes controlling P speciation and transport in lowland catchments

  12. Substoichiometric extraction of phosphorus

    International Nuclear Information System (INIS)

    Shigematsu, T.; Kudo, K.

    1981-01-01

    A study of the substoichiometric extraction of phosphorus is described. Phosphorus was extracted in the form of ternary compounds such as ammonium phosphomolybdate, 8-hydroxyquinolinium phosphomolybdate, tetraphenylarsonium phosphomolybdate and tri-n-octylamine phosphomolybdate. Consequently, phosphorus was extracted substoichiometrically by the addition of a substoichiometric amount of molybdenum for the four phosphomolybdate compounds. On the other hand, phosphorus could be separated substoichiometrically with a substoichiometric amount of tetraphenylarsonium chloride or tri-n-octylamine. Stoichiometric ratios of these ternary compounds obtained substoichiometrically were 1:12:3 for phosphorus, molybdenum and organic reagent. The applicability of these compounds to phosphorus determination is also discussed. (author)

  13. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  14. Phosphorus blood test

    Science.gov (United States)

    ... page: //medlineplus.gov/ency/article/003478.htm Phosphorus blood test To use the sharing features on this page, please enable JavaScript. The phosphorus blood test measures the amount of phosphate in the blood. ...

  15. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  16. Electrically-inactive phosphorus re-distribution during low temperature annealing

    Science.gov (United States)

    Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

    2018-04-01

    An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

  17. Phosphorus poisoning in waterfowl

    Science.gov (United States)

    Coburn, D.R.; DeWitt, J.B.; Derby, J.V.; Ediger, E.

    1950-01-01

    Black ducks and mallards were found to be highly susceptible to phosphorus poisoning. 3 mg. of white phosphorus per kg. of body weight given in a single dose resulted in death of a black duck in 6 hours. Pathologic changes in both acute and chronic poisoning were studied. Data are presented showing that diagnosis can be made accurately by chemical analysis of stored tissues in cases of phosphorus poisoning.

  18. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2014-08-11

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  19. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  20. Rapid enhancement of nodal quasiparticle mass with heavily underdoping in Bi2212

    Science.gov (United States)

    Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shin-ichi; Ino, Akihiro

    2018-05-01

    We report substantial advance of our low-energy angle-resolved photoemission study of nodal quasiparticles in Bi2Sr2CaCu2O8+δ. The new data cover the samples from underdoped down to heavily underdoped levels. We also present the nodal Fermi velocities that determined by using an excitation-photon energy of hν = 7.0 eV over a wide doping range. The consistency between the results with hν = 8.1 and 7.0 eV allows us to rule out the effect of photoemission matrix elements. In comparison with the data previously reported, the nodal effective mass increases by a factor of ∼ 1.5 in going from optimally doped to heavily underdoped levels. We find a rapid enhancement of the nodal quasiparticle mass at low doping levels near the superconductor-to-insulator transition. The effective coupling spectrum, λ (ω) , is extracted directly from the energy derivatives of the quasiparticle dispersion and scattering rate, as a causal function of the mass enhancement factor. A steplike increase in Reλ (ω) around ∼ 65 meV is demonstrated clearly by the Kramers-Kronig transform of Imλ (ω) . To extract the low-energy renormalization effect, we calculated a simple model for the electron-boson interaction. This model reveals that the contribution of the renormalization at | ω | ≤ 15 meV to the quasiparticle mass is larger than that around 65 meV in underdoped samples.

  1. Black phosphorus saturable absorber for ultrashort pulse generation

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

    2015-08-03

    Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

  2. Doping profile measurement on textured silicon surface

    Science.gov (United States)

    Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

    2018-04-01

    In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

  3. Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

    National Research Council Canada - National Science Library

    Crandall, Alan L

    2007-01-01

    USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

  4. Phosphorus dendrimers for nanomedicine.

    Science.gov (United States)

    Caminade, Anne-Marie

    2017-08-31

    From biomaterials to imaging, and from drug delivery to drugs by themselves, phosphorus-containing dendrimers offer a large palette of biological properties, depending essentially on their types of terminal functions. The most salient examples of phosphorus dendrimers used for the elaboration of bio-chips and of supports for cell cultures, for imaging biological events, and for carrying and delivering drugs or biomacromolecules are presented in this feature article. Several phosphorus dendrimers can be considered also as drugs per se (by themselves) in particular to fight against cancers, neurodegenerative diseases, and inflammation, both in vitro and in vivo. Toxicity assays are also reported.

  5. Effect of phosphorus incorporation on morphology and optical properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Fan, Donghua; Zhang, Rong; Wang, Xianghu

    2011-01-01

    Graphical abstract: XPS spectra of the P-doped ZnO nanorods: (a) Zn 2p, (b) O 1s, and (c) P 2p spectra. The red curve in c is the Gauss-fitting curve. (d) Raman spectra of P-doped (curve 1) and pure (curve 2) ZnO nanorods. Research highlights: → P-doped ZnO nanorods have been prepared on Si substrates without any catalyst. → The introduction of phosphorus leads to the growth of tapered tip in the nanorods. → The formation of tapered tip is attributed to the relaxation of the lattice strain along the radial direction. → The strong ultraviolet peak is connected with the phosphorus acceptor-related emissions. -- Abstract: Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.

  6. Isotopically exchangeable phosphorus

    International Nuclear Information System (INIS)

    Barbaro, N.O.

    1984-01-01

    A critique revision of isotope dilution is presented. The concepts and use of exchangeable phosphorus, the phosphate adsorption, the kinetics of isotopic exchange and the equilibrium time in soils are discussed. (M.A.C.) [pt

  7. Application of neutron activation to the characterization of silicon doping technological procedures

    International Nuclear Information System (INIS)

    Jourdain, Daniel.

    1976-01-01

    Neutron activation techniques (examples of reactions, emission spectra) are recalled. Autoradiography is studied in detail: a theoretical study of the phenomena involved and the parameters that have an effect on the resolution, is made. Concentration profiles of doping impurities are analyzed in the case of ion implantation and deep diffusion. Autoradiography was applied to the study of the following technological problems: phosphorus and gold deep diffusion, phosphorus and arsenic ion implantation, deposition and diffusion of phosphorus-doped oxides. Correlations between doping material concentration and electric parameters such as recovering time and surface resistance were looked for [fr

  8. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  9. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

  10. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

  11. Organic chemistry of elemental phosphorus

    International Nuclear Information System (INIS)

    Milyukov, V A; Budnikova, Yulia H; Sinyashin, Oleg G

    2005-01-01

    The principal achievements and the modern trends in the development of the chemistry of elemental phosphorus are analysed, described systematically and generalised. The possibilities and advantages of the preparation of organophosphorus compounds directly from white phosphorus are demonstrated. Attention is focused on the activation and transformation of elemental phosphorus in the coordination sphere of transition metal complexes. The mechanisms of the reactions of white phosphorus with nucleophilic and electrophilic reagents are discussed. Electrochemical approaches to the synthesis of organic phosphorus derivatives based on white phosphorus are considered.

  12. phosphorus sorption capacity as a guide for phosphorus availability

    African Journals Online (AJOL)

    Prof. Adipala Ekwamu

    drained, light yellowish brown, loamy sand ... Dongola 2 Akked series: Deep, dark grayish brown, clay ... energy. Statistical analysis. Data collected were statistically analysed using ANOVA of MStatc ... phosphorus sorbed versus phosphorus.

  13. Preparation of phosphorus targets using the compound phosphorus nitride

    International Nuclear Information System (INIS)

    Maier-Komor, P.

    1987-01-01

    Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

  14. III. Quantitative aspects of phosphorus excretionin ruminants

    OpenAIRE

    Bravo , David; Sauvant , Daniel; Bogaert , Catherine; Meschy , François

    2003-01-01

    International audience; Ruminant phosphorus excretion and metabolism were studied through a database. Faecal endogenous phosphorus is the main pathway of phosphorus excretion and averages 0.85 of total faecal phosphorus. The remaining 0.15 is unabsorbed dietary phosphorus. Faecal endogenous phosphorus is mainly unabsorbed phosphorus, with saliva being the major source, and is correlated to factors influencing saliva secretion (DM intake, physical dietary characteristics and dietary phosphorus...

  15. Traps for phosphorus adsorption

    International Nuclear Information System (INIS)

    Montoya, Nawer D; Villegas, Wilson E; Rodriguez, Lino M; Taborda, Nelson; Montes de C, Consuelo

    2001-01-01

    Several AL 2 O 3 supported oxides such as: NiO, CuO, Co 2 O 3 BaO, CeO 2 and ZnO were investigated for phosphorus adsorption. Zno/y-Al 2 O 3 exhibited the highest phosphorus adsorption capacity. However, since it diminishes the activity of to the reaction mixture it should be located upstream of the NoX catalyst, i.e. 0,3% Pd-H-MOR, in order to protect it against p poisoning. The treatment procedure with citric acid was effective for the removal of more than 70% phosphorus from the adsorbent, ZnO/y-Al 2 O 3

  16. Explosive phenomena in heavily irradiated NaCl

    NARCIS (Netherlands)

    denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

    1997-01-01

    In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

  17. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  18. Chromatography of phosphorus oxoacids

    International Nuclear Information System (INIS)

    Ohashi, S.

    1975-01-01

    The present state of studies on the chromatographic separation of phosphorus oxoacids is surveyed. In this paper, chromatographic techniques are divided into four groups, i.e. paper and thin-layer chromatography, paper electrophoresis, ion-exchange chromatography, and gel chromatography. The separation mechanisms and characteristics for these chromatographic methods are discussed and some examples for the separation of phosphorus oxoacids are described. As examples of the application of ion-exchange and gel chromatography, studies on the hot atom chemistry of 32 P in solid inorganic phosphates and those on the substitution reactions between diphosphonate (diphosphite) and polyphosphates are reported. (author)

  19. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-10-30

    Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

  20. Neutron transmutation doping of polycrystalline silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1976-04-01

    Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

  1. New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

    OpenAIRE

    Steyer, Michael; Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara

    2015-01-01

    The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter,...

  2. Phosphorus in Agriculture : 100 % Zero

    NARCIS (Netherlands)

    Schnug, Ewald; De Kok, Luit J.

    2016-01-01

    Phosphorus is essential for all living organisms, reserves in geogenic deposits are finite, and phosphorus nutrient mining and oversupply are common phenomenons on agricultural soils. Only if the agricultural phosphorus cycle can be closed and the fertilized nutrient been utilized completely,

  3. Diffusivity-mobility relationship for heavily doped semiconductors exhibiting band tails

    International Nuclear Information System (INIS)

    Khan, Arif; Das, Atanu

    2010-01-01

    A relationship between the mobility and diffusivity of semiconductors exhibiting band tails has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors, and to semiconductors with and without band tails. It is suitable for studying electrical transport in these semiconductors.

  4. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

    Czech Academy of Sciences Publication Activity Database

    Savchenko, Dariia

    2015-01-01

    Roč. 117, č. 4 (2015), "045708-1"-"045708-6" ISSN 0021-8979 R&D Projects: GA ČR GP13-06697P; GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : electron spin resonance * conduction electrons * 6H SiC * insulator-metal transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  5. On magnetic ordering in heavily sodium substituted hole doped lanthanum manganites

    Energy Technology Data Exchange (ETDEWEB)

    Sethulakshmi, N. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Unnimaya, A.N. [Centre for Materials for Electronic Technology (CMET), Thrissur 680581, Kerala (India); Al-Omari, I.A.; Al-Harthi, Salim [Department of Physics, Sultan Qaboos University, PC 123 Muscat (Oman); Sagar, S. [Government College for Women, Thiruvananthapuram 695014, Kerala (India); Thomas, Senoy [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019, Kerala (India); Srinivasan, G. [Department of Physics, Oakland University, Rochester (United States); Anantharaman, M.R., E-mail: mraiyer@yahoo.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2015-10-01

    Mixed valence manganite system with monovalent sodium substituted lanthanum manganites form the basis of the present work. Lanthanum manganites belonging to the series La{sub 1−x}Na{sub x}MnO{sub 3} with x=0.5–0.9 were synthesized using modified citrate gel method. Variation of lattice parameters and unit cell volume with Na concentration were analyzed and the magnetization measurements indicated ferromagnetic ordering in all samples at room temperature. Low temperature magnetization behavior indicated that all samples exhibit antiferromagnetism along with ferromagnetism and it has also been observed that antiferromagnetic ordering dominates ferromagnetic ordering as concentration is increased. Evidence for such a magnetic inhomogeneity in these samples has been confirmed from the variation in Mn{sup 3+}/Mn{sup 4+} ion ratio from X-ray Photoelectron Spectroscopy and from the absorption peak studies using Ferromagnetic Resonance Spectroscopy. - Highlights: • Higher substitution of more than 50 percent of monovalent ion, sodium for La sites in lanthanum manganites scarce in literature. • Structural studies using XRD and further structure refinement by Rietveld refinement confirmed orthorhombic pbnm spacegroup. • Ferromagnetic behavior at room temperature with saturation magnetization decreasing with increase in sodium concentration. • M vs T measurements using FC ZFC proved coexisting FM/AFM behavior arising from exchange interactions between different valence states of Mn ions. • Disparity in ratio of Mn valence ions indicated presence of vacancies providing the role of vacancies and oxygen stoichiometry in deciding magnetic inhomogeneity.

  6. Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

    Czech Academy of Sciences Publication Activity Database

    Reddy, N.K.; Devika, M.; Prashantha, M.; Rames, K.; Ivanova, Z.G.; Zavadil, Jiří

    2013-01-01

    Roč. 15, 3-4 (2013), s. 182-186 ISSN 1454-4164 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985882 Keywords : Chalcogenide thin films * Optical properties * Photoinduced changes Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.563, year: 2013

  7. Phosphorus in agricultural soils:

    NARCIS (Netherlands)

    Ringeval, Bruno; Augusto, Laurent; Monod, Hervé; Apeldoorn, van D.F.; Bouwman, A.F.; Yang, X.; Achat, D.L.; Chini, L.P.; Oost, van K.; Guenet, Bertrand; Wang, R.; Decharme, B.; Nesme, T.; Pellerin, S.

    2017-01-01

    Phosphorus (P) availability in soils limits crop yields in many regions of the World, while excess of soil P triggers aquatic eutrophication in other regions. Numerous processes drive the global spatial distribution of P in agricultural soils, but their relative roles remain unclear. Here, we

  8. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    Science.gov (United States)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  9. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  10. Substoichiometric determination of phosphorus

    International Nuclear Information System (INIS)

    Shigematsu, T.; Kudo, K.

    1981-01-01

    Phosphorus in orchard leaves (NBS SRM-1571) and spinach (SRM-1570) was determined by various substoichiometric analytical methods such as the direct method, Gravshchenko's method and the method of carrier amount variation. All samples were labelled with 32 P radioisotope. The data obtained by the method of carrier amount variation were also treated by the method of least squares instead of De Voe's method. Phosphorus concentration in orchard leaves was 0.206+-0.011% by the direct method, 0.219+-0.011% by Gravshchenko's method, 0.211+-0.011% by the method of carrier amount variation and 0.207+-0.007% by the method of least squares, respectively. These values agree with the value reported by NBS (0.21+-0.01%). Furthermore, these concentrations obtained by various substoichiometric methods were compared with those by radioactivation reported in a previous paper. (author)

  11. Structure of straw biochar/amino resin doping nanoSiO2 and its phosphorus removal characteristic%纳米SiO2/氨基淀粉黏合剂秸秆炭的结构及除磷特性

    Institute of Scientific and Technical Information of China (English)

    孙恩惠; 钱玉婷; 靳红梅; 黄慧; 武国峰; 常志州; 黄红英

    2017-01-01

    将秸秆粉用氨基淀粉黏合剂均相包覆,并掺杂纳米二氧化硅(nanoSiO2),采用原位发泡、炭化处理技术制备成纳米SiO2/氨基淀粉黏合剂秸秆炭(掺杂纳米SiO2秸秆多孔颗粒炭,nanoSiO2/AR-biochar).通过透射电镜(transmission electron microscope,TEM)、热稳定性(thermogravimetry,TG)、扫描电镜-能谱扫描(scanning electron microscope-energy dispersive spectrometer,SEM-EDS)、比表面积与孔分析(Brunauer,Emmett and Teller,BET)、氮气吸附和压缩测试等技术手段对nanoSiO2/AR-biochar的孔结构特征、比表面积、微观形貌及压应力进行系统表征,并研究了nanoSiO2/AR-biochar对磷酸根吸附过程等温线及动力学模型.结果表明,掺杂nanoSiO2/AR-biochar孔结构分布匀称、比表面积大幅改善;TEM和SEM发现,掺杂nanoSiO2秸秆多孔颗粒炭材料的表面可形成类似海绵絮状结构,为炭材料提供较高的吸附位点;掺杂nanoSiO2可显著提高炭材料的机械压缩性能,当掺杂量为秸秆粉质量的6%时,压缩强度由3.89 MPa增加到7.96 MPa,增幅达104.6%.由于纳米SiO2的掺杂,nanoSiO2/AR-biochar具有了更强除磷效果,且吸附过程符合准二级动力学模型,在短时间内(5 min)其吸附率可高达18.42 mg/g,体现了该掺杂纳米二氧化硅秸秆多孔颗粒炭具有良好的除磷特性.%Phosphorus is one of the key nutrients that cause eutrophication of water bodies, and excessive phosphorus in water will cause water ecosystem structure and function change, deterioration of water quality and landscape, and biodiversity decrease. Therefore, preventive measure of phosphorus pollution in the aquatic environment and processing must be paid more attention. The processing methods of phosphorous water include biological phosphorus removal technology, chemical precipitation, adsorption, and so on. Adsorption technology is efficient and cheap, and has a good removal effect, which has come into notice of researchers. So far

  12. Phosphorus Transport in Rivers.

    Science.gov (United States)

    1978-11-01

    be attributed to excessive nutrient inputs to the lake. These nutrients sti- mulate the phytoplankton (algae) growth which yields excess growth. The...phosphorus in relation to the restoration of Lake Erie. The various computational techniques presented herein aid in the understanding of total...as caused by the absorption on clay materials and by assimilation by periphyton . Other investigators have found correlations between flow and other

  13. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  14. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  15. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  16. Filtering fens: mechanisms explaining phosphorus-limited hotspots of biodiversity in wetlands adjacent to heavily fertilized areas.

    Science.gov (United States)

    Cusell, Casper; Kooijman, Annemieke; Fernandez, Filippo; van Wirdum, Geert; Geurts, Jeroen J M; van Loon, E Emiel; Kalbitz, Karsten; Lamers, Leon P M

    2014-05-15

    The conservation of biodiverse wetland vegetation, including that of rich fens, has a high priority at a global scale. Although P-eutrophication may strongly decrease biodiversity in rich fens, some well-developed habitats do still survive in highly fertilized regions due to nutrient filtering services of large wetlands. The occurrence of such nutrient gradients is well-known, but the biogeochemical mechanisms that determine these patterns are often unclear. We therefore analyzed chemical speciation and binding of relevant nutrients and minerals in surface waters, soils and plants along such gradients in the large Ramsar nature reserve Weerribben-Wieden in the Netherlands. P-availability was lowest in relatively isolated floating rich fens, where plant N:P ratios indicated P-limitation. P-limitation can persist here despite high P-concentrations in surface waters near the peripheral entry locations, because only a small part of the P-input reaches the more isolated waters and fens. This pattern in P-availability appears to be primarily due to precipitation of Fe-phosphates, which mainly occurs close to entry locations as indicated by decreasing concentrations of Fe- and Al-bound P in the sub-aquatic sediments along this gradient. A further decrease of P-availability is caused by biological sequestration, which occurs throughout the wetland as indicated by equal concentrations of organic P in all sub-aquatic sediments. Our results clearly show that the periphery of large wetlands does indeed act as an efficient P-filter, sustaining the necessary P-limitation in more isolated parts. However, this filtering function does harm the ecological quality of the peripheral parts of the reserve. The filtering mechanisms, such as precipitation of Fe-phosphates and biological uptake of P, are crucial for the conservation and restoration of biodiverse rich fens in wetlands that receive eutrophic water from their surroundings. This seems to implicate that biodiverse wetland vegetation requires larger areas, as long as eutrophication has not been seriously tackled. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. Filtering fens: Mechanisms explaining phosphorus-limited hotspots of biodiversity in wetlands adjacent to heavily fertilized areas

    NARCIS (Netherlands)

    Cusell, C.; Kooijman, A.; Fernandez, F.; van Wirdum, G.; Geurts, J.J.M.; van Loon, E.E.; Kalbitz, K.; Lamers, L.P.M.

    2014-01-01

    The conservation of biodiverse wetland vegetation, including that of rich fens, has a high priority at a global scale. Although P-eutrophication may strongly decrease biodiversity in rich fens, some well-developed habitats do still survive in highly fertilized regions due to nutrient filtering

  18. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  19. Influence of the growth-surface on the incorporation of phosphorus in SiC

    International Nuclear Information System (INIS)

    Rauls, E.; Gerstmann, U.; Frauenheim, Th.

    2005-01-01

    Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

  20. Sustainable Phosphorus Measures: Strategies and Technologies for Achieving Phosphorus Security

    Directory of Open Access Journals (Sweden)

    Stuart White

    2013-01-01

    Full Text Available Phosphorus underpins the world’s food systems by ensuring soil fertility, maximising crop yields, supporting farmer livelihoods and ultimately food security. Yet increasing concerns around long-term availability and accessibility of the world’s main source of phosphorus—phosphate rock, means there is a need to investigate sustainable measures to buffer the world’s food systems against the long and short-term impacts of global phosphorus scarcity. While the timeline of phosphorus scarcity is contested, there is consensus that more efficient use and recycling of phosphorus is required. While the agricultural sector will be crucial in achieving this, sustainable phosphorus measures in sectors upstream and downstream of agriculture from mine to fork will also need to be addressed. This paper presents a comprehensive classification of all potential phosphorus supply- and demand-side measures to meet long-term phosphorus needs for food production. Examples range from increasing efficiency in the agricultural and mining sector, to technologies for recovering phosphorus from urine and food waste. Such measures are often undertaken in isolation from one another rather than linked in an integrated strategy. This integrated approach will enable scientists and policy-makers to take a systematic approach when identifying potential sustainable phosphorus measures. If a systematic approach is not taken, there is a risk of inappropriate investment in research and implementation of technologies and that will not ultimately ensure sufficient access to phosphorus to produce food in the future. The paper concludes by introducing a framework to assess and compare sustainable phosphorus measures and to determine the least cost options in a given context.

  1. Phosphorus containing sintered alloys (review)

    International Nuclear Information System (INIS)

    Muchnik, S.V.

    1984-01-01

    Phosphorus additives are considered for their effect on the properties of sintered alloys of different applications: structural, antifriction, friction, magnetic, hard, superhard, heavy etc. Data are presented on compositions and properties of phosphorus-containing materials produced by the powder metallurgy method. Phosphorus is shown to be an effective activator of sintering in some cases. When its concentration in the material is optimal it imparts the material such properties as strength, viscosity, hardness, wear resistance. Problems concerning powder metallurgy of amorphous phosphorus-containing alloys are reported

  2. Phosphorus and the dairy cow

    OpenAIRE

    Ekelund, Adrienne

    2003-01-01

    The general aim of the present work was to investigate phosphorus balance in the dairy cow, with reference to the amount and source of phosphorus. Furthermore, biochemical bone markers were used to study the bone turnover during the lactation and dry period. Phosphorus is located in every cell of the body and has more known functions than any other mineral element in the animal body. Phosphorus is also an important constituent of milk, and is therefore required in large amounts in a high yiel...

  3. Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Jauho, Antti-Pekka

    2007-01-01

    We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires...

  4. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    International Nuclear Information System (INIS)

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-01-01

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

  5. Combined equilibrium and non-equilibrium phosphorus segregation to grain boundaries in a 2.25Cr1Mo steel

    International Nuclear Information System (INIS)

    Song, S.-H.; Shen, D.-D.; Yuan, Z.-X.; Liu, J.; Xu, T.-D.; Weng, L.-Q.

    2003-01-01

    Grain boundary segregation of phosphorus in a P-doped 2.25Cr1Mo steel during ageing at 540 deg. C after quenching from 980 deg. C is examined by Auger electron spectroscopy. The segregation is a combined effect of equilibrium segregation and non-equilibrium segregation. The effect of phosphorus non-equilibrium segregation is to enhance the kinetics of its equilibrium segregation

  6. Phosphorus, sulfur and pyridine

    OpenAIRE

    Schönberger, Stefanie

    2013-01-01

    The synthesis of distinct neutral or anionic P,S compounds in solution provides a great challenge for chemists. Due to the similarity in the energies of the P–P, P–S and S–S bonds nearly solely a mixture of compounds with different composition and charge is obtained. Our interest focuses on the system consisting of phosphorus, sulfur and pyridine, with the aim of a greater selectivity of P,S compounds in solution. The combination of these three components offers the opportunity...

  7. Towards a closed phosphorus cycle

    NARCIS (Netherlands)

    Keyzer, M.A.

    2010-01-01

    Summary: This paper stresses the need to address upcoming scarcity of phosphorus, a mineral nutrient that is essential for all life on Earth. Agricultural crops obtain phosphorus from the pool in the soil that can be replenished by recycling of organic material, or by application of inorganic

  8. High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

    International Nuclear Information System (INIS)

    Zaghdoudi, M.; Rogel, R.; Alzaied, N.; Fathallah, M.; Mohammed-Brahim, T.

    2008-01-01

    The paper deals with the effect of slightly phosphorus atoms introduced during deposition of polysilicon films. Polysilicon films are used as an active layer in thin film transistors (TFTs) fabricated on glass substrates at a maximum temperature of 600 deg. C.Three phosphorus atoms contents, determined by the value of the phosphine to silane ratio: Γ (3.7 x 10 -7 , 8 x 10 -7 , 26 x 10 -6 ), are used to optimize the active layer quality. The in-situ doped layers induce a better stability of the electrical characteristics, a higher mobility and lower value of the threshold voltage for the slightly doped active layers [M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim and F. Le-Bihan Control of the weak phosphorus doping in polysilicon, Materials Science and Forum, Vols. 480-481 (2005) pp.305.]. The present work shows that the effect of slightly phosphorus content improves the quality of oxide/polysilicon interface and decreases the defects density. Degradation of electrical properties is shown to originate from the creation of defect at the channel-interface oxide and in the grain boundaries. The effect of temperature change on the electrical properties was studied and the behaviour was also analyzed

  9. Controlled doping by self-assembled dendrimer-like macromolecules

    Science.gov (United States)

    Wu, Haigang; Guan, Bin; Sun, Yingri; Zhu, Yiping; Dan, Yaping

    2017-02-01

    Doping via self-assembled macromolecules might offer a solution for developing single atom electronics by precisely placing individual dopants at arbitrary location to meet the requirement for circuit design. Here we synthesize dendrimer-like polyglycerol macromolecules with each carrying one phosphorus atom in the core. The macromolecules are immobilized by the coupling reagent onto silicon surfaces that are pre-modified with a monolayer of undecylenic acid. Nuclear magnetic resonance (NMR) and X-ray photoelectron spectroscopy (XPS) are employed to characterize the synthesized macromolecules and the modified silicon surfaces, respectively. After rapid thermal annealing, the phosphorus atoms carried by the macromolecules diffuse into the silicon substrate, forming dopants at a concentration of 1017 cm-3. Low-temperature Hall effect measurements reveal that the ionization process is rather complicated. Unlike the widely reported simple ionization of phosphorus dopants, nitrogen and carbon are also involved in the electronic activities in the monolayer doped silicon.

  10. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  11. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  12. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  13. Total Phosphorus in Surface Water

    Data.gov (United States)

    U.S. Environmental Protection Agency — Excess phosphorus in surface water can result in eutrophication. TOTALP is reported in kilograms/hectare/year. More information about these resources, including the...

  14. Phosphorus chemistry in everyday living

    National Research Council Canada - National Science Library

    Toy, Arthur D. F

    1976-01-01

    The author has drawn on his 35 years of experience as a research scientist in phosphorus chemistry to produce a book that is not only readable to the non-chemist but sophisticated enough to interest...

  15. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  16. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  17. phosphorus retention data and metadata

    Science.gov (United States)

    phosphorus retention in wetlands data and metadataThis dataset is associated with the following publication:Lane , C., and B. Autrey. Phosphorus retention of forested and emergent marsh depressional wetlands in differing land uses in Florida, USA. Wetlands Ecology and Management. Springer Science and Business Media B.V;Formerly Kluwer Academic Publishers B.V., GERMANY, 24(1): 45-60, (2016).

  18. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  19. Suppressing segregation in highly phosphorus doped silicon monolayers

    NARCIS (Netherlands)

    Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

    2015-01-01

    Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

  20. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  1. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    International Nuclear Information System (INIS)

    Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

    2015-01-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

  2. [Effects of phosphorus sources on phosphorus fractions in rhizosphere soil of wild barley genotypes with high phosphorus utilization efficiency].

    Science.gov (United States)

    Cai, Qiu-Yan; Zhang, Xi-Zhou; Li, Ting-Xuan; Chen, Guang-Deng

    2014-11-01

    High P-efficiency (IS-22-30, IS-22-25) and low P-efficiency (IS-07-07) wild barley cultivars were chosen to evaluate characteristics of phosphorus uptake and utilization, and properties of phosphorus fractions in rhizosphere and non-rhizosphere in a pot experiment with 0 (CK) and 30 mg P · kg(-1) supplied as only Pi (KH2PO4), only Po (phytate) or Pi + Po (KH2PO4+ phytate). The results showed that dry matter and phosphorus accumulation of wild barley in the different treatments was ranked as Pi > Pi + Po > Po > CK. In addition, dry matter yield and phosphorus uptake of wild barley with high P-efficiency exhibited significantly greater than that with low P-efficiency. The concentration of soil available phosphorus was significantly different after application of different phosphorus sources, which was presented as Pi > Pi + Po > Po. The concentration of soil available phosphorus in high P-efficiency wild barley was significantly higher than that of low P-efficiency in the rhizosphere soil. There was a deficit in rhizosphere available phosphorus of high P-efficiency wild barley, especially in Pi and Pi+Po treatments. The inorganic phosphorus fractions increased with the increasing Pi treatment, and the concentrations of inorganic phosphorus fractions in soil were sorted as follows: Ca10-P > O-P > Fe-P > Al-P > Ca2-P > Ca8-P. The contents of Ca2-P and Ca8-P for high P-efficiency wild barley showed deficits in rhizosphere soil under each phosphorus source treatment. In addition, enrichment of Al-P and Fe-P was observed in Pi treatment in rhizosphere soil. The concentrations of organic phosphorus fractions in soil were sorted as follows: moderate labile organic phosphorus > moderate resistant, resistant organic phosphorus > labile organic phosphorus. The labile and moderate labile organic phosphorus enriched in rhizosphere soil and the greatest enrichment appeared in Pi treatment. Furthermore, the concentrations of moderate resistant organic phosphorus and resistant

  3. Phosphorus oxide gate dielectric for black phosphorus field effect transistors

    Science.gov (United States)

    Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

    2018-04-01

    The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

  4. Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber

    International Nuclear Information System (INIS)

    Guang-Hong, Wang; Xiao-Dan, Zhang; Sheng-Zhi, Xu; Xin-Xia, Zheng; Chang-Chun, Wei; Jian, Sun; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

    2010-01-01

    This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μc-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance. (cross-disciplinary physics and related areas of science and technology)

  5. Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

    International Nuclear Information System (INIS)

    Servidori, M.; Zini, Q.; Dal Monte, C.

    1983-01-01

    The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

  6. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  7. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  8. Nitrogen-Doped Carbon for Red Phosphorous Based Anode Materials for Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jiaoyang Li

    2018-01-01

    Full Text Available Serving as conductive matrix and stress buffer, the carbon matrix plays a pivotal role in enabling red phosphorus to be a promising anode material for high capacity lithium ion batteries and sodium ion batteries. In this paper, nitrogen-doping is proved to effective enhance the interface interaction between carbon and red phosphorus. In detail, the adsorption energy between phosphorus atoms and oxygen-containing functional groups on the carbon is significantly reduced by nitrogen doping, as verified by X-ray photoelectron spectroscopy. The adsorption mechanisms are further revealed on the basis of DFT (the first density functional theory calculations. The RPNC (red phosphorus/nitrogen-doped carbon composite material shows higher cycling stability and higher capacity than that of RPC (red phosphorus/carbon composite anode. After 100 cycles, the RPNC still keeps discharge capacity of 1453 mAh g−1 at the current density of 300 mA g−1 (the discharge capacity of RPC after 100 cycles is 1348 mAh g−1. Even at 1200 mA g−1, the RPNC composite still delivers a capacity of 1178 mAh g−1. This work provides insight information about the interface interactions between composite materials, as well as new technology develops high performance phosphorus based anode materials.

  9. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  10. Guiding phosphorus stewardship for multiple ecosystem services

    Science.gov (United States)

    Phosphorus is vital to agricultural production and water quality regulation. While the role of phosphorus in agriculture and water quality has been studied for decades, the benefits of sustainable phosphorus use and management for society due to its downstream impacts on multiple ecosystem services...

  11. Estimation of the algal-available phosphorus pool in sediments of a large, shallow eutrophic lake (Taihu, China) using profiled SMT fractional analysis

    International Nuclear Information System (INIS)

    Zhu Mengyuan; Zhu Guangwei; Li Wei; Zhang Yunlin; Zhao Linlin; Gu Zhao

    2013-01-01

    Because large, shallow lakes are heavily influenced by wind–wave disturbance, it is difficult to estimate internal phosphorus load using traditional methods. To estimate the potential contribution of phosphorus from sediment to overlying water in eutrophic Lake Taihu, phosphorus fractions of surface and deep layer sediments were quantified and analyzed for algal bloom potential using a Standard Measurements and Testing (SMT) sequential extraction method and incubation experiments. Phosphorus bound to Fe, Al and Mn oxides and hydroxides (Fe–P) and organic phosphorus (OP) were to be found bioactive. The difference in Fe–P and OP contents between surface and deep layers equates to the sediment pool of potentially algal-available phosphorus. This pool was estimated at 5168 tons for the entire lake and was closely related to pollution input and algal blooms. Profiled SMT fractionation analysis is thus a potentially useful tool for estimating internal phosphorus loading in large, shallow lakes. - Highlights: ► We used profiled sediment P activity by SMT fractionation to evaluate the P release potential in large and shallow lakes. ► We built the relationship between sediment SMT fractionations of P and the P release by algal bloom degradation process. ► We discussed the supporting mechanism of sediment P release to Microcystis algal bloom in a large and shallow lake. ► We discussed the nutrient control strategy of algal bloom in shallow lakes in highly human activities disturbance catchment. - Profiled SMT fractional analysis of internal phosphorus pool in large, shallow lake.

  12. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  13. Black phosphorus: broadband nonlinear optical absorption and application

    Science.gov (United States)

    Li, Ying; He, Yanliang; Cai, Yao; Chen, Shuqing; Liu, Jun; Chen, Yu; Yuanjiang, Xiang

    2018-02-01

    Black phosphorus (BP), 2D layered material with layered dependent direct bandgap (0.3 eV (bulk), 2.0 eV (single layer)) that has gained renewed attention, has been demonstrated as an extremely appropriate optical material for broadband optical applications from infrared to mid-infrared wavebands. Herein, by coupling multi-layer BP films with microfiber, we fabricated a nonlinear optical device with long light-matter interaction distance and enhanced damage threshold. Through taking full advantage of its fine nonlinear optical absorption property, we obtained stable mode-locking (51 ps) and Q-switched mode-locking states in Yb-doped or Er-doped (403.7 fs) all-fiber lasers and the single-longitudinal-mode operation (53 kHz) in an Er-doped fiber laser with enhanced power tolerance, using the same nonlinear optical device. Our results showed that BP could be a favorable nonlinear optical material for developing BP-enabled wave-guiding photonic devices, and revealed new insight into BP for high optical power unexplored optical devices.

  14. Phosphorus requirement in laying hens

    NARCIS (Netherlands)

    Lambert, W.; Krimpen, van M.M.; Star, L.

    2014-01-01

    It was hypothesized that P supply by feed in alternative housing systems can be lowered without negative effects on bone quality and production performance. Therefore, the objectives of the current study were 1) to update the retainable phosphorus (rP) needs of two modern laying hen breeds from 36

  15. Greening the global phosphorus cycle

    NARCIS (Netherlands)

    Withers, Paul J.A.; Elser, James J.; Hilton, Julian; Ohtake, Hisao; Schipper, Willem J.; Dijk, Van Kimo C.

    2015-01-01

    The sustainability of global phosphorus (P) use is emerging as a major societal goal to secure future food, energy, and water security for a growing population. Phosphate rock (PR) is a critical raw material whose inefficiency of use is leading to widespread eutrophication and uncertainties about

  16. Anthropogenic phosphorus flows in Denmark

    DEFF Research Database (Denmark)

    Klinglmair, Manfred

    Phosphorus (P) is an essential plant nutrient mined from the earth’s crust as phosphate rock. It cannot be substituted, making it a crucial resource for food production. For the EU, future phosphate scarcity is a potential geopolitical and strategic threat. An increasing worldwide phosphate demand...

  17. Few-layer black phosphorus nanoparticles.

    Science.gov (United States)

    Sofer, Zdenek; Bouša, Daniel; Luxa, Jan; Mazanek, Vlastimil; Pumera, Martin

    2016-01-28

    Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.

  18. SEQUENTIAL ELECTRODIALYTIC EXTRACTION OF PHOSPHORUS COMPOUNDS

    DEFF Research Database (Denmark)

    2017-01-01

    The present invention relates to an apparatus for electrodialytic extraction of phosphorus from a particulate material in suspension and to a method for electrodialytic phosphorus recovery, which uses the apparatus. The method may be applied for wastewater treatment, and/or treatment of particulate...... material rich in phosphorus. The present invention provides an apparatus for electrodialytic extraction of phosphorus from a particulate material comprising acidic and/or alkaline soluble phosphorus compounds, in suspension, comprising: • a first electrodialytic cell comprising a first anolyte compartment...

  19. Environmental Phosphorus Recovery Based on Molecular Bioscavengers

    DEFF Research Database (Denmark)

    Gruber, Mathias Felix

    Phosphorus is a ubiquitous element of all known life and as such it is found throughout numerous key molecules related to various cellular functions. The supply of phosphorus is tightly linked to global food security, since phosphorus is used to produce agricultural fertilizers, without which...... it would not be possible to feed the world population. Sadly, the current supply of phosphorus is based on the gradual depletion of limited fossil reserves, and some estimates predict that within 15-25 years we will consume more phosphorus than we can produce. There is therefore a strong international...... pressure to develop sustainable phosphorus practices as well as new technologies for phosphorus recovery. Nature has spent billions of years refining proteins that interact with phosphates. This has inspired the present work where the overall ambitions are: to facilitate the development of a recovery...

  20. Predicting phosphorus concentrations in British rivers resulting from the introduction of improved phosphorus removal from sewage effluent

    International Nuclear Information System (INIS)

    Bowes, Michael J.; Neal, Colin; Jarvie, Helen P.; Smith, Jim T.; Davies, Helen N.

    2010-01-01

    Phosphorus (P) concentration and flow data gathered during the 1990s for a range of British rivers were used to determine the relative contributions of point and diffuse inputs to the total P load, using the Load Apportionment Model (LAM). Heavily urbanised catchments were dominated by sewage inputs, but the majority of the study catchments received most of their annual phosphorus load from diffuse sources. Despite this, almost 80% of the study sites were dominated by point source inputs for the majority of the year, particularly during summer periods when eutrophication risk is greatest. This highlights the need to reduce sewage P inputs to improve the ecological status of British rivers. These modelled source apportionment estimates were validated against land-use data and boron load (a chemical marker for sewage). The LAM was applied to river flow data in subsequent years, to give predicted P concentrations (assuming no change in P source inputs), and these estimates were compared with observed concentration data. This showed that there had been significant reductions in P concentration in the River Thames, Aire and Ouse in the period 1999 to 2002, which were attributable to the introduction of P stripping at sewage treatment works (STW). The model was then used to forecast P concentrations resulting from the introduction of P removal at STW to a 2 or 1 mg l -1 consent limit. For the urbanised rivers in this study, the introduction of phosphorus stripping to a 1 mg l -1 consent level at all STW in the catchment would not reduce P concentrations in the rivers to potentially limiting concentrations. Therefore, further sewage P stripping will be required to comply with the Water Framework Directive. Diffuse P inputs may also need to be reduced before some of the highly nutrient-enriched rivers achieve good ecological status.

  1. Tuning electronic properties of In2O3 nanowires by doping control

    International Nuclear Information System (INIS)

    Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

    2004-01-01

    We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

  2. Synthesis, structure and properties of heavily Mn-doped perovskite-type SrTiO.sub.3./sub. nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Trepakov, Vladimír; Makarova, Marina; Stupakov, Oleksandr; Tereshina, Evgeniya; Drahokoupil, Jan; Čerňanský, Marian; Potůček, Zdeněk; Borodavka, Fedir; Valvoda, V.; Lynnyková, Anna; Jäger, Aleš; Jastrabík, Lubomír; Dejneka, Alexandr

    2014-01-01

    Roč. 143, č. 2 (2014), s. 570-577 ISSN 0254-0584 R&D Projects: GA TA ČR TA01010517; GA ČR GAP108/12/1941; GA ČR GBP108/12/G043; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : nanostructures * oxides * ferroelectricity * magnetic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.259, year: 2014 http://www.sciencedirect.com/science/article/pii/S0254058413007141

  3. The infrared optical properties of heavily B-doped nanocrystalline diamond films on low alkaline glass substrates

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Nesladek, M.

    2006-01-01

    Roč. 203, č. 12 (2006), s. 3016-3020 ISSN 0031-8965 R&D Projects: GA AV ČR KJB100100623 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond * boron * dielectric function * glass Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.221, year: 2006

  4. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  5. Dietary phosphorus acutely impairs endothelial function.

    Science.gov (United States)

    Shuto, Emi; Taketani, Yutaka; Tanaka, Rieko; Harada, Nagakatsu; Isshiki, Masashi; Sato, Minako; Nashiki, Kunitaka; Amo, Kikuko; Yamamoto, Hironori; Higashi, Yukihito; Nakaya, Yutaka; Takeda, Eiji

    2009-07-01

    Excessive dietary phosphorus may increase cardiovascular risk in healthy individuals as well as in patients with chronic kidney disease, but the mechanisms underlying this risk are not completely understood. To determine whether postprandial hyperphosphatemia may promote endothelial dysfunction, we investigated the acute effect of phosphorus loading on endothelial function in vitro and in vivo. Exposing bovine aortic endothelial cells to a phosphorus load increased production of reactive oxygen species, which depended on phosphorus influx via sodium-dependent phosphate transporters, and decreased nitric oxide production via inhibitory phosphorylation of endothelial nitric oxide synthase. Phosphorus loading inhibited endothelium-dependent vasodilation of rat aortic rings. In 11 healthy men, we alternately served meals containing 400 mg or 1200 mg of phosphorus in a double-blind crossover study and measured flow-mediated dilation of the brachial artery before and 2 h after the meals. The high dietary phosphorus load increased serum phosphorus at 2 h and significantly decreased flow-mediated dilation. Flow-mediated dilation correlated inversely with serum phosphorus. Taken together, these findings suggest that endothelial dysfunction mediated by acute postprandial hyperphosphatemia may contribute to the relationship between serum phosphorus level and the risk for cardiovascular morbidity and mortality.

  6. Electrical property studies of neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1978-01-01

    Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

  7. Phytoextraction of excess soil phosphorus

    International Nuclear Information System (INIS)

    Sharma, Nilesh C.; Starnes, Daniel L.; Sahi, Shivendra V.

    2007-01-01

    In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils

  8. Phytoextraction of excess soil phosphorus

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Nilesh C. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Starnes, Daniel L. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States); Sahi, Shivendra V. [Department of Biology, Western Kentucky University, 1906 College Heights Boulevard 11080, Bowling Green, KY 42101-1080 (United States)]. E-mail: shiv.sahi@wku.edu

    2007-03-15

    In the search for a suitable plant to be used in P phytoremediation, several species belonging to legume, vegetable and herb crops were grown in P-enriched soils, and screened for P accumulation potentials. A large variation in P concentrations of different plant species was observed. Some vegetable species such as cucumber (Cucumis sativus) and yellow squash (Cucurbita pepo var. melopepo) were identified as potential P accumulators with >1% (dry weight) P in their shoots. These plants also displayed a satisfactory biomass accumulation while growing on a high concentration of soil P. The elevated activities of phosphomonoesterase and phytase were observed when plants were grown in P-enriched soils, this possibly contributing to high P acquisition in these species. Sunflower plants also demonstrated an increased shoot P accumulation. This study shows that the phytoextraction of phosphorus can be effective using appropriate plant species. - Crop plants such as cucumber, squash and sunflower accumulate phosphorus and thus can be used in the phytoextraction of excess phosphorus from soils.

  9. Potential Phosphorus Mobilisation in Peat Soils

    DEFF Research Database (Denmark)

    Forsmann, Ditte M.; Kjærgaard, Charlotte

    2012-01-01

    Re-establishment of wetlands on peat soils containing phosphorus bound to iron(III)-oxides can lead to an undesirable phosphorus loss to the aquatic environment due to the reductive dissolution of iron(III)-oxides. Thus it is important to be able to assess the potential phosphorus mobilisation from...... peat soils before a re-establishment takes place. The potential phosphorus mobilisation from a peat soil depends not only on the geochemical characteristics but also on the redox conditions, the hydrological regime in the area as well as the hydro-physical properties of the soil. The hypothesis...... for this study is (i) the release of phosphorus in peat is controlled by the geochemistry; (ii) the mobilisation of phosphorus is controlled by both geochemistry and hydro-physics of the soil. For this study, 10 Danish riparian lowland areas with peat soil were selected based on their geochemical characteristics...

  10. Fertilizer phosphorus in some Finnish soils

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1961-01-01

    Full Text Available In the present paper it is tried to trace the fate of fertilizer phosphorus in soil by comparing the analyses of soils from treated and untreated plots of field trials. This indirect approach cannot be expected to provide exact values, but it is likely to give an approximate answer. The results reported above do not in any marked degree change our present conception of the forms in which fertilizer phosphorus accumulates in soils. In the acid soils studied (pH 4—6.4 in 0.02 N CaCl2 superphosphate tended to increase the fractions which were extracted by NH4F or NaOH. Hyperphosphate phosphorus was mostly found in the acid-soluble fraction. During a longer period of dressing with phosphate an increase in the organic phosphorus content of a peat soil could be detected. In the incubation experiments the mineralization of organic phosphorus occurred at a higher rate in the samples from the plots treated with superphosphate than in those from the untreated one. It might be supposed that the organic phosphorus mineralized mainly originated from the plant residues. It seems that the fractionation method developed by CHANG and JACKSON (4 for the estimation of discrete forms of soil phosphorus is not quite satisfactory for tracing the fertilizer phosphorus in soils recently dressed with phosphates. In particular, it may be fallacious to conclude that the fraction extracted by NH4F would only represent phosphorus bound to aluminium and its compounds. At least in the absence of soil, a large part of phosphorus in dicalcium phosphate dihydrate falls into this fraction, and also a small amount of hyperphosphate phosphorus may be found in it. The test values for »available» phosphorus showed the effect of fertilizers in accordance with previous observations (9, 13. Acetic acid soluble P revealed the treatment with hyperphosphate, but only slightly the application of superphosphate. The test value for the sorbed P of BRAY and KURTZ (2, or phosphorus

  11. Phosphorus and Nutrition in Chronic Kidney Disease

    Directory of Open Access Journals (Sweden)

    Emilio González-Parra

    2012-01-01

    Full Text Available Patients with renal impairment progressively lose the ability to excrete phosphorus. Decreased glomerular filtration of phosphorus is initially compensated by decreased tubular reabsorption, regulated by PTH and FGF23, maintaining normal serum phosphorus concentrations. There is a close relationship between protein and phosphorus intake. In chronic renal disease, a low dietary protein content slows the progression of kidney disease, especially in patients with proteinuria and decreases the supply of phosphorus, which has been directly related with progression of kidney disease and with patient survival. However, not all animal proteins and vegetables have the same proportion of phosphorus in their composition. Adequate labeling of food requires showing the phosphorus-to-protein ratio. The diet in patients with advanced-stage CKD has been controversial, because a diet with too low protein content can favor malnutrition and increase morbidity and mortality. Phosphorus binders lower serum phosphorus and also FGF23 levels, without decreasing diet protein content. But the interaction between intestinal dysbacteriosis in dialysis patients, phosphate binder efficacy, and patient tolerance to the binder could reduce their efficiency.

  12. Towards global phosphorus security: A systems framework for phosphorus recovery and reuse options

    NARCIS (Netherlands)

    Cordell, D.; Rosemarin, A.; Schroder, J.J.; Smit, A.L.

    2011-01-01

    Human intervention in the global phosphorus cycle has mobilised nearly half a billion tonnes of the element from phosphate rock into the hydrosphere over the past half century. The resultant water pollution concerns have been the main driver for sustainable phosphorus use (including phosphorus

  13. Strongly anisotropic RKKY interaction in monolayer black phosphorus

    Science.gov (United States)

    Zare, Moslem; Parhizgar, Fariborz; Asgari, Reza

    2018-06-01

    We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in two-dimensional black phosphorus, phosphorene. The RKKY interaction enhances significantly for the low levels of hole doping owing to the nearly valence flat band. Remarkably, for the hole-doped phosphorene, the highest RKKY interaction occurs when two impurities located along the zigzag direction and it tends to a minimum value with changing the direction from the zigzag to the armchair direction. We show that the interaction is highly anisotropic and the magnetic ground-state of two magnetic adatoms can be tuned by changing the rotational configuration of impurities. Owing to the anisotropic band dispersion, the oscillatory behavior with respect to the angle of the rotation and the distance of two magnetic impurities, R is well-described by sin (2kF R) , where the Fermi wavelength kF changes in different directions. We also find that the tail of the RKKY oscillations falls off as 1 /R2 at large distances.

  14. Phosphorus-32: practical radiation protection

    International Nuclear Information System (INIS)

    Ballance, P.E.; Morgan, J.

    1987-01-01

    This monograph offers practical advice to Radiation Protection Advisors, Radiation Protection Supervisors and Research Supervisors, together with research workers, particularly those in the field of molecular biological research. The subject is dealt with under the following headings: physical properties, radiation and measurement methods, radiation units, phosphorus metabolism and health risks, protection standards and practical radiation protection, administrative arrangements, accidents, decontamination, emergency procedures, a basic written system for radiochemical work, with specialised recommendations for 32 P, and guidance notes of accident situations involving 32 P. (U.K.)

  15. Global Fertilizer and Manure, Version 1: Phosphorus Fertilizer Application

    Data.gov (United States)

    National Aeronautics and Space Administration — The Phosphorus Fertilizer Application dataset of the Global Fertilizer and Manure, Version 1 Data Collection represents the amount of phosphorus fertilizer nutrients...

  16. Sustainable use of phosphorus: a finite resource.

    Science.gov (United States)

    Scholz, Roland W; Ulrich, Andrea E; Eilittä, Marjatta; Roy, Amit

    2013-09-01

    Phosphorus is an essential element of life and of the modern agricultural system. Today, science, policy, agro-industry and other stakeholder groups are increasingly concerned about the sustainable use of this resource, given the dissipative nature of phosphorus and difficulties in assessing, evaluating, and coping with phosphorus pollution in aquatic and terrestrial systems. We argue that predictions about a forthcoming peak, followed by a quick reduction (i.e., physical phosphate rock scarcity) are unreasoned and stress that access to phosphorus (economic scarcity) is already, and may increasingly become critical, in particular for smallholders farmers in different parts of the world. The paper elaborates on the design, development, goals and cutting-edge contributions of a global transdisciplinary process (i.e. mutual learning between science and society including multiple stakeholders) on the understanding of potential contributions and risks related to the current mode of using phosphorus on multiple scales (Global TraPs). While taking a global and comprehensive view on the whole phosphorus-supply chain, Global TraPs organizes and integrates multiple transdisciplinary case studies to better answer questions which inform sustainable future phosphorus use. Its major goals are to contribute to four issues central to sustainable resource management: i) long-term management of biogeochemical cycles, in particular the challenge of closing the phosphorus cycle, ii) achieving food security, iii) avoiding environmental pollution and iv) sustainability learning on a global level by transdisciplinary processes. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Determination of phosphorus using derivative neutron activation

    International Nuclear Information System (INIS)

    Scindia, Y.M.; Nair, A.G.C.; Reddy, A.V.R.; Manohar, S.B.

    2002-01-01

    For the determination of phosphorus in different matrices, the derivative neutron activation analysis is especially applicable to aqueous samples, since the conventional neutron activation analysis is not useful for the determination of phosphorus. Phosphorus when reacted with ammonium molybdate 4 hydrate and ammonium metavanadate forms molybdo vanado phosphoric acid. This complex is preconcentrated by extracting into methyl isobutyl ketone. The organic phase containing the molybdo vanado phosphoric acid is neutron activated and the phosphorus is determined through the activation product of 52 V. Preparation of this complex, its stoichiometry, application to trace level determination of phosphorus and improved detection limit are discussed. This method was applied for the analysis of industrial effluent samples. (author)

  18. Adaptive Evolution of Phosphorus Metabolism in Prochlorococcus

    DEFF Research Database (Denmark)

    Casey, John R; Mardinoglu, Adil; Nielsen, Jens

    2016-01-01

    Inorganic phosphorus is scarce in the eastern Mediterranean Sea, where the high-light-adapted ecotype HLI of the marine picocyanobacterium Prochlorococcus marinus thrives. Physiological and regulatory control of phosphorus acquisition and partitioning has been observed in HLI both in culture...... and in the field; however, the optimization of phosphorus metabolism and associated gains for its phosphorus-limited-growth (PLG) phenotype have not been studied. Here, we reconstructed a genome-scale metabolic network of the HLI axenic strain MED4 (iJC568), consisting of 568 metabolic genes in relation to 794...... through drastic depletion of phosphorus-containing biomass components but also through network-wide reductions in phosphate-reaction participation and the loss of a key enzyme, succinate dehydrogenase. These alterations occur despite the stringency of having relatively few pathway redundancies...

  19. Surface buckling of black phosphorus: Determination, origin, and influence on electronic structure

    Science.gov (United States)

    Dai, Zhongwei; Jin, Wencan; Yu, Jie-Xiang; Grady, Maxwell; Sadowski, Jerzy T.; Kim, Young Duck; Hone, James; Dadap, Jerry I.; Zang, Jiadong; Osgood, Richard M.; Pohl, Karsten

    2017-12-01

    The surface structure of black phosphorus materials is determined using surface-sensitive dynamical microspot low energy electron diffraction (μ LEED ) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (i) crystalline cleaved black phosphorus (BP) at 300 K and (ii) exfoliated few-layer phosphorene (FLP) of about 10 nm thickness which were annealed at 573 K in vacuum were studied. In both samples, a significant surface buckling of 0.22 Å and 0.30 Å, respectively, is measured, which is one order of magnitude larger than previously reported. As direct evidence for large buckling, we observe a set of (for the flat surface forbidden) diffraction spots. Using first-principles calculations, we find that the presence of surface vacancies is responsible for the surface buckling in both BP and FLP, and is related to the intrinsic hole doping of phosphoresce materials previously reported.

  20. Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry

    Science.gov (United States)

    Ryder, Christopher R.; Wood, Joshua D.; Wells, Spencer A.; Yang, Yang; Jariwala, Deep; Marks, Tobin J.; Schatz, George C.; Hersam, Mark C.

    2016-06-01

    Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical and electronic properties. Exfoliated black phosphorus (BP)—a layered two-dimensional semiconductor—exhibits favourable charge-carrier mobility, tunable bandgap and highly anisotropic properties, but it is chemically reactive and degrades rapidly in ambient conditions. Here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated BP even after three weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent and alters the electronic properties of exfoliated BP, ultimately yielding a strong, tunable p-type doping that simultaneously improves the field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated BP, and thus improves its prospects for nanoelectronic applications.

  1. Preparation of highly dispersed palladium–phosphorus nanoparticles and its electrocatalytic performance for formic acid electrooxidation

    International Nuclear Information System (INIS)

    Sun Hanjun; Xu Jiangfeng; Fu Gengtao; Mao Xinbiao; Zhang, Lu; Chen Yu; Zhou Yiming; Lu Tianhong; Tang Yawen

    2012-01-01

    Highly dispersed and ultrafine palladium–phosphorus (Pd–P) nanoparticles (NPs) are prepared with a novel phosphorus reduction method. The structural and electronic properties of Pd–P NPs are characterized using Fourier transform infrared (FT-IR), energy dispersive spectrometer (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The electrooxidation of formic acid on Pd–P NPs are investigated by using cyclic voltammetry, chronoamperometry and CO-stripping measurements. The physical characterizations indicate the doped P element can enhance the content of Pd 0 species in Pd NPs, decrease the particle size and improve the dispersion of Pd–P NPs. The electrochemical measurements show the Pd–P NPs have a better catalytic performance for formic acid electrooxidation than Pd NPs.

  2. Phosphorus Regulation in Chronic Kidney Disease.

    Science.gov (United States)

    Suki, Wadi N; Moore, Linda W

    2016-01-01

    Serum phosphorus levels stay relatively constant through the influence of multiple factors-such as parathyroid hormone, fibroblast growth factor 23, and vitamin D-on the kidney, bone, and digestive system. Whereas normal serum phosphorus ranges between 3 mg/dL to 4.5 mg/dL, large cross-sectional studies have shown that even people with normal kidney function are sometimes found to have levels ranging between 1.6 mg/dL and 6.2 mg/dL. While this may partially be due to diet and the factors mentioned above, total understanding of these atypical ranges of serum phosphorus remains uncertain. Risks for bone disease are high in people aged 50 and older, and this group comprises a large proportion of people who also have chronic kidney disease. Consuming diets low in calcium and high in phosphorus, especially foods with phosphate additives, further exacerbates bone turnover. Existing bone disease increases the risk for high serum phosphorus, and higher serum phosphorus has been associated with increased adverse events and cardiovascular-related mortality both in people with chronic kidney disease and in those with no evidence of disease. Once kidney function has deteriorated to end-stage disease (Stage 5), maintaining normal serum phosphorus requires dietary restrictions, phosphate-binding medications, and dialysis. Even so, normal serum phosphorus remains elusive in many patients with Stage 5 kidney disease, and researchers are testing novel targets that may inhibit intestinal transport of phosphorus to achieve better phosphate control. Protecting and monitoring bone health should also aid in controlling serum phosphorus as kidney disease advances.

  3. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  4. Bronx River bed sediments phosphorus pool and phosphorus compound identification

    Science.gov (United States)

    Wang, J.; Pant, H. K.

    2008-12-01

    Phosphorus (P) transport in the Bronx River degraded water quality, decreased oxygen levels, and resulted in bioaccumulation in sediment potentially resulting in eutrophication, algal blooms and oxygen depletion under certain temperature and pH conditions. The anthropogenic P sources are storm water runoff, raw sewage discharge, fertilizer application in lawn, golf course and New York Botanical Garden; manure from the Bronx zoo; combined sewoverflows (CSO's) from parkway and Hunts Point sewage plant; pollutants from East River. This research was conducted in the urban river system in New York City area, in order to control P source, figure out P transport temporal and spatial variations and the impact on water quality; aimed to regulate P application, sharing data with Bronx River Alliance, EPA, DEP and DEC. The sediment characteristics influence the distribution and bioavailbility of P in the Bronx River. The P sequential extraction gave the quantitative analysis of the P pool, quantifying the inorganic and organic P from the sediments. There were different P pool patterns at the 15 sites, and the substantial amount of inorganic P pool indicated that a large amount P is bioavailable. The 31P- NMR (Nuclear Magnetic Resonance Spectroscopy) technology had been used to identify P species in the 15 sites of the Bronx River, which gave a qualitative analysis on phosphorus transport in the river. The P compounds in the Bronx River bed sediments are mostly glycerophophate (GlyP), nucleoside monophosphates (NMP), polynucleotides (PolyN), and few sites showed the small amount of glucose-6-phosphate (G6P), glycerophosphoethanoamine (GPEA), phosphoenopyruvates (PEP), and inosine monophosphate (IMP). The land use spatial and temporal variations influence local water P levels, P distributions, and P compositions.

  5. Phosphorus metabolism and estimation of phosphorus requirements for sheep

    International Nuclear Information System (INIS)

    Louvandini, H.; Vitti, D.M.S.S.

    1996-01-01

    The main objective of the present work was to determine the effects of different dietary phosphorus (P) levels on endogenous faecal loss and to estimate the minimum daily requirement of P for sheep. The study was conducted with 24 Suffolk sheep which received a basic diet consisting of a hay-concentrate mixture. The treatment consisted of different amounts of bone meal, added to the basic diet, so as to obtain supplementary P levels of 0, 2 and 3 g/day. Twenty-one days after the introduction of the experimental diet, 7.4 MBq radioactive P ( 32 P) was injected in the left jugular vein of each sheep and blood, feces and urine were collected daily for 8 days at 24-hour intervals. The samples were analysed for inorganic P and for radioactive specific activities. Mean endogenous faecal losses of P were 10.00, 31.79, 39.35 and 38.06 mg/kg live weight (LW) per day in sheep supplemented with 0, 1, 2 and 3 g respectively. A positive linear relation ship was observed between endogenous faecal loss and consumed P, indicating that this loss was linked to dietary P. Total P excretion in the faeces, as well as P absorption, retention urinary excretion and salivary secretion were also directly related to P intake, as part of the mechanism of homeostatic control of organism animal. The minimum endogenous faecal loss for zero P intake, calculated by interpolation, was 8.27 mg/kg LW per day, and for zero balance, the calculated phosphorus consumption was 21.36 mg/kg LW per day. (author)

  6. NuSTAR observations of heavily obscured quasars at z ~ 0.5

    DEFF Research Database (Denmark)

    Lansbury, G. B.; Alexander, D. M.; Del Moro, A.

    2014-01-01

    We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength...

  7. Gemcitabine and capecitabine for heavily pre-treated metastatic colorectal cancer patients

    DEFF Research Database (Denmark)

    Spindler, Karen-Lise G; Pallisgaard, Niels; Andersen, Rikke F

    2014-01-01

    AIM: We investigated the efficacy and safety of capecitabine and gemcitabin (GemCap) in heavily pre-treated, therapy-resistant metastatic colorectal cancer (mCRC) patients and the clinical importance of cell-free DNA (cfDNA) measurement. PATIENTS AND METHODS: Patients' inclusion criteria included...

  8. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    NARCIS (Netherlands)

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the

  9. Becoming a Heavily Tattooed Young Body: From a Bodily Experience to a Body Project

    Science.gov (United States)

    Ferreira, Vitor Sérgio

    2014-01-01

    Why some young people start to tattoo their bodies? And why some of them keep going on with this practice, until having all body tattooed? What doing so means to them? These are some of the questions that underlie a qualitative research project carried out in Portugal on heavily tattooed young people. In this article, the author discusses their…

  10. Dual Inhibition of EGFR and VEGF in Heavily Pretreated Patients with Metastatic Colorectal Cancer

    DEFF Research Database (Denmark)

    Larsen, Finn Ole; Markussen, Alice; Nielsen, Dorte

    2017-01-01

    : The combination of irinotecan, bevacizumab, and cetuximab/panitumumab is safe and shows a toxicity profile corresponding to what is expected from the agents alone. The results indicate that the combination in the 4th line may result in a high rate of disease control in heavily pretreated patients with metastatic...

  11. Phosphorus determination by various substoichiometric methods

    International Nuclear Information System (INIS)

    Shigematsu, Toshio; Kudo, Kiyoshi

    1981-01-01

    Various substoichiometric methods have been classified from a view point of the substoichiometric separation. Based upon the substoichiometric separation, phosphorus was determined substoichiometrically by a direct method, a method of carrier amount variation and a comparison method for the irradiated sample. The direct method was applied to the determination of phosphorus in orchard leaves (SRM-1571). The analytical value was 0.23 +- 0.01%. Phosphorus in orchard leaves and spinach (SRM-1570) was determined by an ordinary method which devided the sample into equal parts in the method of carrier amount variation. Analytical values of orchard leaves and spinach were 0.22 +- 0.02% and 0.56 +- 0.04%, respectively. Moreover, a new modification of the method of carrier amount variation was studied by the use of various standard samples such as red phosphorus, spinach and orchard leaves. These standard samples were also employed for the determination of phosphorus in orchard leaves and 0.21 +- 0.01% was obtained. All these results are in good agreement with the value reported by NBS. The comparison method was applied to the determination of phosphorus in a semiconductor silicon single crystal. As a result of the correction of 32 P activity induced by the secondary nuclear reaction of 30 Si, 7.9 ppb and 3.1 ppb were obtained for the phosphorus concentrations in the single crystal silicon. (author)

  12. Electrical properties of phosphorene systems doped with fourth-period elements

    Science.gov (United States)

    Wang, Ke; Wang, Hai; Zhang, Min; Liu, Yan; Zhao, Wei

    2018-05-01

    In this work, we use a first-principles calculation to investigate the structure, binding energies, and electrical properties of monolayer phosphorene systems doped with fourth-period main group elements at a doping concentration of 6.25%. The calculation results reveal that, although large deformations exist, all doped systems are stable and non-spin polarized. In addition, the Ca, Se, and Br atoms are electron acceptors in the doped systems, whereas the Ga, Ge and As atoms are donors. Thus, there is an ionic bonding character between the dopants and neighboring phosphorus atoms in the Ca-, Ga-, Ge-, As-, Se-, and Br-doped systems. From band structures, we find that the K-, Ga-, As-, and Br-doped systems present semiconducting states with indirect gaps, whereas the Ca-, Ge-, and Se-doped systems have metallic states. We conclude that the metallicity of a phosphorene system doped with main-group elements depends on the number of valence electrons of the dopant. This investigation provides directions for manipulating the electrical properties of phosphorene by substitutional doping, which would broaden its possible applications in optoelectronics.

  13. First-principles investigation of adsorption and diffusion of Li on doped silicenes: Prospective materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Momeni, Mohammad Jafar; Mousavi-Khoshdel, Morteza; Targholi, Ehsan

    2017-01-01

    In this report, we investigate the adsorption energies and diffusion characteristics of Li atom on doped silicenes using first principles density functional theory (DFT) calculations. Our results show that the Li adsorption energy on doped silicenes is larger than pristine silicene. Based on our calculations, Al- and B-doped silicenes, due to creating an electron-deficient center in silicene, show a stronger interaction with Li atom compared to P- and N-doped silicenes. The obtained data for surface and perpendicular diffusion of Li atom show the easier mobility of Li on some doped silicenes compared to pristine silicene. According to our results, doping silicene with nitrogen and phosphorus atoms facilitates the Li surface mobility (diffusion barrier of 0.05 and 0.11 eV, respectively versus 0.18 eV for pure silicene) while, doping with aluminum, speed Li perpendicular diffusion (1.47 eV versus 1.67 eV for pristine silicene). The adsorption energy and diffusion barrier values, show the advantage of doped silicenes for use in LIBs with respect to pure silicene. - Highlights: • Calculation of adsorption energy of lithium on pristine and doped silicenes. • Surface and perpendicular diffusion barrier of Li on doped silicenes. • Examination of electronic structure of Li adsorbed doped silicenes.

  14. First-principles investigation of adsorption and diffusion of Li on doped silicenes: Prospective materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Momeni, Mohammad Jafar; Mousavi-Khoshdel, Morteza, E-mail: mmousavi@iust.ac.ir; Targholi, Ehsan

    2017-05-01

    In this report, we investigate the adsorption energies and diffusion characteristics of Li atom on doped silicenes using first principles density functional theory (DFT) calculations. Our results show that the Li adsorption energy on doped silicenes is larger than pristine silicene. Based on our calculations, Al- and B-doped silicenes, due to creating an electron-deficient center in silicene, show a stronger interaction with Li atom compared to P- and N-doped silicenes. The obtained data for surface and perpendicular diffusion of Li atom show the easier mobility of Li on some doped silicenes compared to pristine silicene. According to our results, doping silicene with nitrogen and phosphorus atoms facilitates the Li surface mobility (diffusion barrier of 0.05 and 0.11 eV, respectively versus 0.18 eV for pure silicene) while, doping with aluminum, speed Li perpendicular diffusion (1.47 eV versus 1.67 eV for pristine silicene). The adsorption energy and diffusion barrier values, show the advantage of doped silicenes for use in LIBs with respect to pure silicene. - Highlights: • Calculation of adsorption energy of lithium on pristine and doped silicenes. • Surface and perpendicular diffusion barrier of Li on doped silicenes. • Examination of electronic structure of Li adsorbed doped silicenes.

  15. Influence of integrated phosphorus supply and plant growth ...

    African Journals Online (AJOL)

    To guarantee a sufficient phosphorus supply for plants, a rapid and permanent mobilization of phosphorus from the labile phosphorus fractions is necessary, because phosphorus concentrations in soil solution are generally low. Several plant growth-promoting rhizobacteria (PGPR) have shown potential to enhance ...

  16. Prevalence of phosphorus containing food additives in grocery stores

    Directory of Open Access Journals (Sweden)

    Janeen B. Leon

    2012-06-01

    In conclusion, phosphorus additives are commonly present in groceries and contribute significantly to the phosphorus content of foods. Moreover, phosphorus additive foods are less costly than additive-free foods. As a result, phosphorus additives may be an important contributor to hyperphosphatemia among persons with chronic kidney disease

  17. Measurement of phosphorus in metals by RNAA

    International Nuclear Information System (INIS)

    Paul, R.L.

    2000-01-01

    An RNAA procedure has been developed for measurement of low-level phosphorus in metals. Samples are irradiated at a neutron flux of 2.7 x 10 13 n x cm -2 x s -1 then mixed with carrier and dissolved in acid. After chemical separation and purification of the phosphorus and gravimetric determination of carrier yield, 32 P is determined using a beta proportional counter. The detection limit for a 0.1 g sample irradiated for 30 minutes is 5 μg/kg. The method has been used to determine 6.4 ± 0.6 mg/kg phosphorus is SRM 2175 refractory alloy. (author)

  18. Radiochemical analysis of phosphorus in milk samples

    International Nuclear Information System (INIS)

    Oliveira, R.M. de; Cunha, I.I.L.

    1991-01-01

    The determination of phosphorus in milk samples by thermal neutron activation analysis employing radiochemical separation is described. The radiochemical separation consists of the simultaneous irradiation of samples and standards, dissolution of the milk samples in a perchloric acid and nitric acid mixture, addition of zinc hold-back carrier, precipitation of phosphorus as ammonium phospho molybdate (A.M.P.) and sample counting in a Geiger-Mueller detector. The analysis sources of error were studied and the established method was applied to phosphorus analyses in commercial milk samples. (author)

  19. Use of Phosphorus Isotopes for Improving Phosphorus Management in Agricultural Systems

    International Nuclear Information System (INIS)

    2016-10-01

    Phosphorus is an essential element in plant, human and animal nutrition. Soils with low levels of phosphorus are widespread in many regions of the world, and the deficiency limits plant growth and reduces crop production and food quality. This publication provides comprehensive and up to date information on several topics related to phosphorus in soil–plant systems, in agricultural systems and in the environment. It presents the theoretical background as well as practical information on how to use nuclear and radioisotope tracer techniques in both laboratory and greenhouse experiments to assess soil phosphorus forms and plant-available soil phosphorus pools, and to understand the cycling processes in soil–plant systems. The publication focuses on practical applications of radiotracer techniques and can serve as resource material for research projects on improving sustainable phosphorus management in agricultural systems and as practical guidance on the use of phosphate isotopes in soil–plant research

  20. Scaling Relations for Adsorption Energies on Doped Molybdenum Phosphide Surfaces

    International Nuclear Information System (INIS)

    Fields, Meredith; Tsai, Charlie; Chen, Leanne D.; Abild-Pedersen, Frank; Nørskov, Jens K.; Chan, Karen

    2017-01-01

    Molybdenum phosphide (MoP), a well-documented catalyst for applications ranging from hydrotreating reactions to electrochemical hydrogen evolution, has yet to be mapped from a more fundamental perspective, particularly in the context of transition-metal scaling relations. In this work, we use periodic density functional theory to extend linear scaling arguments to doped MoP surfaces and understand the behavior of the phosphorus active site. The derived linear relationships for hydrogenated C, N, and O species on a variety of doped surfaces suggest that phosphorus experiences a shift in preferred bond order depending on the degree of hydrogen substitution on the adsorbate molecule. This shift in phosphorus hybridization, dependent on the bond order of the adsorbate to the surface, can result in selective bond weakening or strengthening of chemically similar species. As a result, we discuss how this behavior deviates from transition-metal, sulfide, carbide, and nitride scaling relations, and we discuss potential applications in the context of electrochemical reduction reactions.

  1. Assessing the Long Term Impact of Phosphorus Fertilization on Phosphorus Loadings Using AnnAGNPS

    OpenAIRE

    Yuan, Yongping; Bingner, Ronald L.; Locke, Martin A.; Stafford, Jim; Theurer, Fred D.

    2011-01-01

    High phosphorus (P) loss from agricultural fields has been an environmental concern because of potential water quality problems in streams and lakes. To better understand the process of P loss and evaluate the effects of different phosphorus fertilization rates on phosphorus losses, the USDA Annualized AGricultural Non-Point Source (AnnAGNPS) pollutant loading model was applied to the Ohio Upper Auglaize watershed, located in the southern portion of the Maumee River Basin. In this study, the ...

  2. Phosphorus K4 Crystal: A New Stable Allotrope

    OpenAIRE

    Jie Liu; Shunhong Zhang; Yaguang Guo; Qian Wang

    2016-01-01

    The intriguing properties of phosphorene motivate scientists to further explore the structures and properties of phosphorus materials. Here, we report a new allotrope named K 4 phosphorus composed of three-coordinated phosphorus atoms in non-layered structure which is not only dynamically and mechanically stable, but also possesses thermal stability comparable to that of the orthorhombic black phosphorus (A17). Due to its unique configuration, K 4 phosphorus exhibits exceptional properties: i...

  3. Screening crops for efficient phosphorus acquisition in a low phosphorus soil using radiotracer technique

    International Nuclear Information System (INIS)

    Meena, S.; Malarvizhi, P.; Rajeswari, R.

    2017-01-01

    Deficiency of phosphorus (P) is the major limitation to agricultural production. Identification of cultivars with greater capacity to grow in soils having low P availability (phosphorus efficiency) will help in P management in a sustainable way. Green house experiment with maize (CO 6) and cotton (MCU 13) as test crops with four levels of phosphorus (0, 3.75, 7.50 and 15 mg P kg -1 soil) was conducted in a P deficient soil (7.2 kg ha -1 ) to study the phosphorus acquisition characteristics and to select efficient crop using 32 P radiotracer technique. Carrier free 32 P obtained as orthophosphoric acid in dilute hydrochloric acid medium from the Board of Radiation and Isotope Technology, Mumbai was used for labeling the soil @ 3200 kBq pot -1 . After 60 days the crops were harvested and the radioactivity was measured in the plant samples using Liquid scintillation counter (PerkinElmer - Tricarb 2810 TR). Different values of specific radioactivity and Isotopically Exchangeable Phosphorus for maize and cotton indicated that chemically different pools of soil P were utilized and maize accessing a larger pool than cotton. Maize having recorded high Phosphorus Use Efficiency, Phosphorus Efficiency and low Phosphorus Stress Factor values, it is a better choice for P deficient soils. Higher Phosphorus Acquisition Efficiency of maize (59 %) than cotton (48%) can be related to the ability of maize to take up P from insoluble inorganic P forms. (author)

  4. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  5. Phosphorus in antique iron music wire.

    Science.gov (United States)

    Goodway, M

    1987-05-22

    Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.

  6. The phosphorus and the transition metals chemistry

    International Nuclear Information System (INIS)

    Mathey, F.

    1988-01-01

    The 1988 progress report, concerning the Polytechnic School unit (France), which studies the phosphorus and the transition metals chemistry, is presented. The laboratory activities are related to the following topics: the phosporus heterocyclic chemistry, the phosphorus-carbon double bonds chemistry, the new transition metals phosphorus compounds, the phosphonates and their uses. Some practical applications of homogeneous catalysis and new materials synthesis are investigated. The main results obtained are: the discovery of the tetra-phosphafulvalenes, the utilization of a new synthesis method of the phosphorus-carbon double bonds and the stabilization of the α-phosphonyled carbanions by the lithium diisopropylamidourea. The papers, the congress communications and the thesis are also shown [fr

  7. short communication synthesis of stabilized phosphorus ylides

    African Journals Online (AJOL)

    Preferred Customer

    made from phosphine and an alkyl halide [1], and they are also obtained by the Michael ... have established a convenient, one-pot method for preparing stabilized phosphorus ylides ... The ylides are converted to electron-poor alkenes via.

  8. Yellow phosphorus-induced Brugada phenocopy.

    Science.gov (United States)

    Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

    Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Nanotubes based on monolayer blue phosphorus

    KAUST Repository

    Montes Muñ oz, Enrique; Schwingenschlö gl, Udo

    2016-01-01

    We demonstrate structural stability of monolayer zigzag and armchair blue phosphorus nanotubes by means of molecular dynamics simulations. The vibrational spectrum and electronic band structure are determined and analyzed as functions of the tube

  10. Water Quality Criteria for White Phosphorus

    Science.gov (United States)

    1987-08-01

    the number of eggs produced per adult , Chronic tests using inidges exposed to elemental phosphorus through contaminated sediments were also performed by...hemoglobinemia, hemoglobinuria, hematuria, bilirubinemia, mild (Cases 2 and 3) to severe (Case 1) hypocalcemia , -61- r. ., TABLE 14. SUMMARY OF CASUALTIES...day yellow phosphorus in corn oil for 30 days or less, lost weight. Young adult rats injected with 0.5 mg/kg/day lost less weight than fully mature or

  11. Physicochemical properties of mixed phosphorus halides

    International Nuclear Information System (INIS)

    Sladkov, I.B.; Tugarinova, N.S.

    1996-01-01

    Certain physicochemical properties (thermodynamic characteristics at boiling point, critical constants, density of liquid on the saturation line) of mixed phosphorus halides (PI 3 , PI 2 F, PIF 2 , PI 2 Cl, PICl 2 , PI 1 Br, PIBr 2 , PIClF, PIBrCl, etc.) are determined by means of approximate methods. Reliability of the results obtained is confirmed by comparison of calculated and experimental data for phosphorus compounds of the same type. 7 refs., 3 figs., 4 tabs

  12. Phosphorus and phytase levels for layer hens

    OpenAIRE

    Juliana Cristina Ramos Rezende; Antonio Carlos de Laurentiz; Rosemeire da Silva Filardi; Vitor Barbosa Fascina; Daniella Aparecida Berto; Sérgio Turra Sobrane Filho

    2013-01-01

    The objective of this research was to evaluate the performance and bone quality of laying hens after peak production fed diets containing phosphorus levels and phytase. An experiment was conducted with 384 Hy-line distributed in a completely randomized in a factorial 4 x 3 with 4 levels of available phosphorus and 3 levels of phytase. The experimental period was divided into four periods of 28 days, at the end of each cycle were determined experimental feed intake, egg production, egg weight,...

  13. Phosphorus Processing—Potentials for Higher Efficiency

    OpenAIRE

    Ludwig Hermann; Fabian Kraus; Ralf Hermann

    2018-01-01

    In the aftermath of the adoption of the Sustainable Development Goals (SDGs) and the Paris Agreement (COP21) by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million ...

  14. Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

    2008-01-01

    The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

  15. Water activated doping and transport in multilayered germanane crystals

    International Nuclear Information System (INIS)

    Young, Justin R; Johnston-Halperin, Ezekiel; Chitara, Basant; Cultrara, Nicholas D; Arguilla, Maxx Q; Jiang, Shishi; Fan, Fan; Goldberger, Joshua E

    2016-01-01

    The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues. (paper)

  16. Recovery of phosphorus from sewerage treatment sludge

    Energy Technology Data Exchange (ETDEWEB)

    Manuilova, Anastasia

    1999-07-01

    This thesis is a review of the current state of technologies for the removal of phosphorus from wastewater and sludge, and the recovery and re-use of phosphorus. It explains the need for phosphorus removal and describes the current removal processes. Focus is given to phosphorus crystallisation processes and to the processes which treat sewage treatment sludges into potential sources of phosphorus. An interesting possibility to recover phosphorus from sewage sludge by use of Psenner fractionation is also discussed. By this method, the following phosphate fractions of technological significance may be distinguished: (1) redox sensitive phosphates, mainly bound to Fe(OH){sub 3}; (2) phosphate adsorbed to surfaces (Al{sub 2}O{sub 3}), exchangeable against OH{sup -}, and alkali-soluble phosphate; (3) phosphate bound to CaCO{sub 3}, MgCO{sub 3} and in apatite; and (4) organically bound phosphate. The basic removal mechanisms, process schemes and treatment results are described. Two experiments with three different types of sludges from Henriksdal wastewater treatment plant in Stockholm were performed in the laboratory. It was shown that the addition of sodium hydroxide or hydrochloric acid cause the significant release of phosphate (about 80%) for all types of sludges. If a whole Psenner fractionation was performed the phosphate release is approximately 100%.

  17. Effects of white phosphorus on mallard reproduction

    Science.gov (United States)

    Vann, S.I.; Sparling, D.W.; Ottinger, M.A.

    2000-01-01

    Extensive waterfowl mortality involving thousands of ducks, geese, and swans has occurred annually at Eagle River Flats, Alaska since at least 1982. The primary agent for this mortality has been identified as white phosphorus. Although acute and subacute lethality have been described, sublethal effects are less well known. This study reports on the effects of white phosphorus on reproductive function in the mallard (Anas platyrhynchos) in captivity. Fertility, hatching success, teratogenicity, and egg laying frequency were examined in 70 adult female mallards who received up to 7 daily doses of 0, 0.5, 1.0, and 2.0 mg/kg of white phosphorus. Measurements of fertility and hatchability were reduced by the white phosphorus. Teratogenic effects were observed in embryos from hens dosed at all treatment levels. Egg laying frequency was reduced even at the lowest treatment level; treated hens required a greater number of days to lay a clutch of 12 eggs than control hens. After two doses at 2.0 mg/kg, all females stopped laying completely for a minimum of 10 days and laying frequency was depressed for at least 45 days. Fertility of 10 adult male mallards dosed with 1.0 mg/kg of white phosphorus did not differ from 10 controls, but plasma testosterone levels were significantly (p free-ranging mallards may be impaired if they are exposed to white phosphorus at typical field levels.

  18. Operation of heavily irradiated silicon detectors in non-depletion mode

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

    2006-01-01

    The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

  19. Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

    Science.gov (United States)

    Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

    2017-08-01

    This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

  20. The renaissance of black phosphorus.

    Science.gov (United States)

    Ling, Xi; Wang, Han; Huang, Shengxi; Xia, Fengnian; Dresselhaus, Mildred S

    2015-04-14

    One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

  1. Total Value of Phosphorus Recovery.

    Science.gov (United States)

    Mayer, Brooke K; Baker, Lawrence A; Boyer, Treavor H; Drechsel, Pay; Gifford, Mac; Hanjra, Munir A; Parameswaran, Prathap; Stoltzfus, Jared; Westerhoff, Paul; Rittmann, Bruce E

    2016-07-05

    Phosphorus (P) is a critical, geographically concentrated, nonrenewable resource necessary to support global food production. In excess (e.g., due to runoff or wastewater discharges), P is also a primary cause of eutrophication. To reconcile the simultaneous shortage and overabundance of P, lost P flows must be recovered and reused, alongside improvements in P-use efficiency. While this motivation is increasingly being recognized, little P recovery is practiced today, as recovered P generally cannot compete with the relatively low cost of mined P. Therefore, P is often captured to prevent its release into the environment without beneficial recovery and reuse. However, additional incentives for P recovery emerge when accounting for the total value of P recovery. This article provides a comprehensive overview of the range of benefits of recovering P from waste streams, i.e., the total value of recovering P. This approach accounts for P products, as well as other assets that are associated with P and can be recovered in parallel, such as energy, nitrogen, metals and minerals, and water. Additionally, P recovery provides valuable services to society and the environment by protecting and improving environmental quality, enhancing efficiency of waste treatment facilities, and improving food security and social equity. The needs to make P recovery a reality are also discussed, including business models, bottlenecks, and policy and education strategies.

  2. THE CHEMICAL EVOLUTION OF PHOSPHORUS

    International Nuclear Information System (INIS)

    Jacobson, Heather R.; Thanathibodee, Thanawuth; Frebel, Anna; Roederer, Ian U.; Cescutti, Gabriele; Matteucci, Francesca

    2014-01-01

    Phosphorus is one of the few remaining light elements for which little is known about its nucleosynthetic origin and chemical evolution, given the lack of optical absorption lines in the spectra of long-lived FGK-type stars. We have identified a P I doublet in the near-ultraviolet (2135/2136 Å) that is measurable in stars of low metallicity. Using archival Hubble Space Telescope-Space Telescope Imaging Spectrograph spectra, we have measured P abundances in 13 stars spanning –3.3 ≤ [Fe/H] ≤ -0.2, and obtained an upper limit for a star with [Fe/H] ∼ -3.8. Combined with the only other sample of P abundances in solar-type stars in the literature, which spans a range of –1 ≤ [Fe/H] ≤ +0.2, we compare the stellar data to chemical evolution models. Our results support previous indications that massive-star P yields may need to be increased by a factor of a few to match stellar data at all metallicities. Our results also show that hypernovae were important contributors to the P production in the early universe. As P is one of the key building blocks of life, we also discuss the chemical evolution of the important elements to life, C-N-O-P-S, together

  3. The Chemical Evolution of Phosphorus

    Science.gov (United States)

    Jacobson, Heather R.; Thanathibodee, Thanawuth; Frebel, Anna; Roederer, Ian U.; Cescutti, Gabriele; Matteucci, Francesca

    2014-12-01

    Phosphorus is one of the few remaining light elements for which little is known about its nucleosynthetic origin and chemical evolution, given the lack of optical absorption lines in the spectra of long-lived FGK-type stars. We have identified a P I doublet in the near-ultraviolet (2135/2136 Å) that is measurable in stars of low metallicity. Using archival Hubble Space Telescope-Space Telescope Imaging Spectrograph spectra, we have measured P abundances in 13 stars spanning -3.3 production in the early universe. As P is one of the key building blocks of life, we also discuss the chemical evolution of the important elements to life, C-N-O-P-S, together. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This work is supported through program AR-13246. Other portions of this work are based on data gathered with the 6.5 m Magellan Telescopes located at Las Campanas Observatory, Chile, and the McDonald Observatory of the University of Texas at Austin.

  4. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  5. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  6. Estimate of dietary phosphorus intake using 24-h urine collection

    Science.gov (United States)

    Morimoto, Yuuka; Sakuma, Masae; Ohta, Hiroyuki; Suzuki, Akitsu; Matsushita, Asami; Umeda, Minako; Ishikawa, Makoto; Taketani, Yutaka; Takeda, Eiji; Arai, Hidekazu

    2014-01-01

    Increases in serum phosphorus levels and dietary phosphorus intake induces vascular calcification, arterial sclerosis and cardiovascular diseases. Limiting phosphorus intake is advisable, however, no assessment methods are capable of estimating dietary phosphorus intake. We hypothesized that urinary phosphorus excretion can be translated into estimation of dietary phosphorus intake, and we evaluated whether a 24-h urine collection method could estimate dietary phosphorus intake. Thirty two healthy subjects were recruited for this study. Subjects collected urine samples over 24 h and weighed dietary records. We calculated dietary protein intake and phosphorus intake from dietary records and urine collection, and investigated associations between the two methods in estimating protein and phosphorus intake. Significant positive correlations were observed between dietary records and UC for protein and phosphorus intake. The average intakes determined from dietary records were significantly higher than from urine collection for both protein and phosphorus. There was a significant positive correlation between both the phosphorus and protein difference in dietary records and urine collection. The phosphorus-protein ratio in urine collection was significantly higher than in dietary records. Our data indicated that the 24-h urine collection method can estimate the amount of dietary phosphorus intake, and the results were superior to estimation by weighed dietary record. PMID:25120281

  7. Simulating soil phosphorus dynamics for a phosphorus loss quantification tool.

    Science.gov (United States)

    Vadas, Peter A; Joern, Brad C; Moore, Philip A

    2012-01-01

    Pollution of fresh waters by agricultural phosphorus (P) is a water quality concern. Because soils can contribute significantly to P loss in runoff, it is important to assess how management affects soil P status over time, which is often done with models. Our objective was to describe and validate soil P dynamics in the Annual P Loss Estimator (APLE) model. APLE is a user-friendly spreadsheet model that simulates P loss in runoff and soil P dynamics over 10 yr for a given set of runoff, erosion, and management conditions. For soil P dynamics, APLE simulates two layers in the topsoil, each with three inorganic P pools and one organic P pool. It simulates P additions to soil from manure and fertilizer, distribution among pools, mixing between layers due to tillage and bioturbation, leaching between and out of layers, crop P removal, and loss by surface runoff and erosion. We used soil P data from 25 published studies to validate APLE's soil P processes. Our results show that APLE reliably simulated soil P dynamics for a wide range of soil properties, soil depths, P application sources and rates, durations, soil P contents, and management practices. We validated APLE specifically for situations where soil P was increasing from excessive P inputs, where soil P was decreasing due to greater outputs than inputs, and where soil P stratification occurred in no-till and pasture soils. Successful simulations demonstrate APLE's potential to be applied to major management scenarios related to soil P loss in runoff and erosion. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

  8. Sustainable Phosphorus Chemistry: A Silylphosphide Synthon for the Generation of Value-Added Phosphorus Chemicals.

    Science.gov (United States)

    Slootweg, J Chris

    2018-05-07

    Avoiding white phosphorus: Cummins and Geeson have recently described the conversion of phosphoric acid into the novel bis(trichlorosilyl)phosphide anion, which serves as a key intermediate in the synthesis of organophosphines, hexafluorophosphate, and phosphine gas in a reaction sequence that does not rely on white phosphorus. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Phosphorus use efficiency of maize: an investigation using radiotracer phosphorus (32P)

    International Nuclear Information System (INIS)

    Meena, S.

    2017-01-01

    A better understanding on the nutrient uptake and utilization by plants is essential for developing better nutrient efficient cultivars suited for optimal production. Precise information on the PUE of crops and P dynamics can be obtained with the help of radiotracer technique. To study the phosphorus acquisition and phosphorus use efficiency of added sources in maize using 32 P, a pot culture experiment was conducted in a medium P soil (21.26 kg ha -1 ). The treatments were P as Single Superphosphate, Enriched FYM with Single Superphosphate (EFYM), DAP, Nutriseed pack (SSP), Nutriseed pack (DAP). The above treatments were applied along with phosphobacteria. Totally there were ten treatments replicated four times. Phosphorus sources were tagged with 32 P (obtained as 32 P in orthophosphoric medium from the Board of Radiation and Isotope Technology) and applied as per the treatments. Radioactive 32 P in the grain and stover sample was determined using Liquid Scintillation Counter (Perkin Elmer Tricarb 2810 R). Using the data, per cent phosphorus derived from fertilizer (%Pdff), per cent phosphorus derived from soil (%Pdfs), Phosphorus Use Efficiency (PUE) and A value were determined. Application of Phosphorus (SSP, DAP, enriched FYM with SSP, Nutriseed pack (SSP) and Nutriseed pack (DAP)) along with PB increased the per cent phosphorus derived from fertilizer (% Pdff), P uptake from fertilizer and PUE. The highest PUE of 25.38 was recorded in the treatment where enriched FYM with SSP was applied along with PB. (author)

  10. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  11. Estimation of phosphorus flux in rivers during flooding.

    Science.gov (United States)

    Chen, Yen-Chang; Liu, Jih-Hung; Kuo, Jan-Tai; Lin, Cheng-Fang

    2013-07-01

    Reservoirs in Taiwan are inundated with nutrients that result in algal growth, and thus also reservoir eutrophication. Controlling the phosphorus load has always been the most crucial issue for maintaining reservoir water quality. Numerous agricultural activities, especially the production of tea in riparian areas, are conducted in watersheds in Taiwan. Nutrients from such activities, including phosphorus, are typically flushed into rivers during flooding, when over 90% of the yearly total amount of phosphorous enters reservoirs. Excessive or enhanced soil erosion from rainstorms can dramatically increase the river sediment load and the amount of particulate phosphorus flushed into rivers. When flow rates are high, particulate phosphorus is the dominant form of phosphorus, but sediment and discharge measurements are difficult during flooding, which makes estimating phosphorus flux in rivers difficult. This study determines total amounts of phosphorus transport by measuring flood discharge and phosphorous levels during flooding. Changes in particulate phosphorus, dissolved phosphorus, and their adsorption behavior during a 24-h period are analyzed owing to the fact that the time for particulate phosphorus adsorption and desorption approaching equilibrium is about 16 h. Erosion of the reservoir watershed was caused by adsorption and desorption of suspended solids in the river, a process which can be summarily described using the Lagmuir isotherm. A method for estimating the phosphorus flux in the Daiyujay Creek during Typhoon Bilis in 2006 is presented in this study. Both sediment and phosphorus are affected by the drastic discharge during flooding. Water quality data were collected during two flood events, flood in June 9, 2006 and Typhoon Bilis, to show the concentrations of suspended solids and total phosphorus during floods are much higher than normal stages. Therefore, the drastic changes of total phosphorus, particulate phosphorus, and dissolved phosphorus in

  12. Addition of sunitinib to cetuximab and irinotecan in patients with heavily pre-treated advanced colorectal cancer

    DEFF Research Database (Denmark)

    Qvortrup, Camilla; Jensen, Benny Vittrup; Jørgensen, Trine Lembrecht

    2010-01-01

    Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented.......Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented....

  13. Peak Phosphorus: Clarifying the Key Issues of a Vigorous Debate about Long-Term Phosphorus Security

    Directory of Open Access Journals (Sweden)

    Stuart White

    2011-10-01

    Full Text Available This paper reviews the latest information and perspectives on global phosphorus scarcity. Phosphorus is essential for food production and modern agriculture currently sources phosphorus fertilizers from finite phosphate rock. The 2008 food and phosphate fertilizer price spikes triggered increased concerns regarding the depletion timeline of phosphate rock reserves. While estimates range from 30 to 300 years and are shrouded by lack of publicly available data and substantial uncertainty, there is a general consensus that the quality and accessibility of remaining reserves are decreasing and costs will increase. This paper clarifies common sources of misunderstandings about phosphorus scarcity and identifies areas of consensus. It then asks, despite some persistent uncertainty, what would it take to achieve global phosphorus security? What would a ‘hard-landing’ response look like and how could preferred ‘soft-landing’ responses be achieved?

  14. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  15. Secondary poisoning of kestrels by white phosphorus

    Science.gov (United States)

    Sparling, D.W.; Federoff, N.E.

    1997-01-01

    Since 1982, extensive waterfowl mortality due to white phosphorus (P4) has been observed at Eagle River Flats, a tidal marsh near Anchorage, Alaska. Ducks and swans that ingest P4 pellets become lethargic and may display severe convulsions. Intoxicated waterfowl attract raptors and gulls that feed on dead or dying birds. To determine if avian predators can be affected by secondary poisoning, we fed American kestrels (Falco sparverius) 10-day-old domestic chickens that had been dosed with white phosphorus. Eight of 15 kestrels fed intact chicks with a pellet of P4 implanted in their crops died within seven days. Three of 15 kestrels fed chicks that had their upper digestive tracts removed to eliminate any pellets of white phosphorus also died. Hematocrit and hemoglobin in kestrels decreased whereas lactate dehydrogenaseL, glucose, and alanine aminotransferase levels in plasma increased with exposure to contaminated chicks. Histological examination of liver and kidneys showed that the incidence and severity of lesions increased when kestrels were fed contaminated chicks. White phosphorus residues were measurable in 87% of the kestrels dying on study and 20% of the survivors. This study shows that raptors can become intoxicated either by ingesting portions of digestive tracts containing white phosphorus pellets or by consuming tissues of P4 contaminated prey.

  16. Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.

    Science.gov (United States)

    Liu, Yuanda; Ang, Kah-Wee

    2017-07-25

    Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.

  17. Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyomin Park

    2012-01-01

    Full Text Available To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

  18. The Adequacy of Phosphorus Binder Prescriptions Among American Hemodialysis Patients

    Science.gov (United States)

    Huml, Anne M.; Sullivan, Catherine M.; Leon, Janeen B.; Sehgal, Ashwini R.

    2013-01-01

    Because hemodialysis treatment has a limited ability to remove phosphorus, dialysis patients must restrict dietary phosphorus intake and use phosphorus binding medication. Among patients with restricted dietary phosphorus intake (1000 mg/d), phosphorus binders must bind about 250 mg of excess phosphorus per day and among patients with more typical phosphorus intake (1500 mg/d), binders must bind about 750 mg per day. To determine the phosphorus binding capacity of binder prescriptions among American hemodialysis patients, we undertook a cross-sectional study of a random sample of in-center chronic hemodialysis patients. We obtained data for one randomly selected patient from 244 facilities nationwide. About one-third of patients had hyperphosphatemia (serum phosphorus level > 5.5 mg/dL). Among the 224 patients prescribed binders, the mean phosphorus binding capacity was 256 mg/d (SD 143). 59% of prescriptions had insufficient binding capacity for restricted dietary phosphorus intake, and 100% had insufficient binding capacity for typical dietary phosphorus intake. Patients using two binders had a higher binding capacity than patients using one binder (451 vs. 236 mg/d, p phosphorus balance. Use of two binders results in higher binder capacity. Further work is needed to understand the impact of binder prescriptions on mineral balance and metabolism and to determine the value of substantially increasing binder prescriptions. PMID:23013171

  19. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  20. Development of a radiochemical procedure for certification of phosphorus implantation dose in silicon

    International Nuclear Information System (INIS)

    Paul, R.L.; Simons, D.S.

    2002-01-01

    The U.S. semiconductor industry relies heavily on secondary ion mass spectrometry (SIMS) for characterization of the depth distribution of dopants such as boron, arsenic, and phosphorus in silicon. To assist the industry in achieving high accuracy measurements, two Standard Reference Materials (SRMs) have been developed by NIST as SIMS calibration standards: SRM 2137 (Boron Implant in Silicon), certified by neutron depth profiling, and SRM 2134 (Arsenic Implant in Silicon), certified by instrumental neutron activation analysis. The industry is still in need of a phosphorus standard. Plans are currently underway to develop a phosphorus implant in silicon SRM, to be certified by radiochemical neutron activation analysis (RNAA). RNAA was chosen because other techniques lack the necessary sensitivity, chemical specificity and matrix independence to measure phosphorus at implantation levels. In order to assess the sensitivity, accuracy, and precision of RNAA for this work, preliminary measurements were carried out on six pieces of a phosphorus-implanted silicon wafer that was previously used in a round-robin study of SIMS measurement repeatability. Standards were prepared by depositing micro litre amounts of a standardized phosphorus solution on aluminum foil. A non-implanted silicon wafer was analysed as a blank. Samples were irradiated at a neutron fluency rate of 1 x 10 14 cm -2 s -1 to convert 31 P to 32 P, then mixed with milligram amounts of phosphorus carrier and dissolved in a mixture of nitric and hydrofluoric acids. Phosphorus was separated from the matrix by precipitation first as ammonium phosphomolybdate then as magnesium ammonium phosphate. The yield (fraction of recovered carrier) was determined gravimetrically as Mg(NH 4 )PO 4 .6H 2 O. 32 P was measured using a beta proportional counter. The measurements yielded a mean and standard deviation of (8.35 ± 0.20) x 10 14 atoms.cm -2 (relative standard deviation = 2.35 %), in agreement with both the nominal

  1. Nice Guys Finish Last: Are People with Higher Tax Morale Taxed more Heavily?

    OpenAIRE

    Philipp Doerrenberg; Denvil Duncan; Clemens Fuest; Andreas Peichl

    2012-01-01

    This paper is the first to provide evidence of efficient taxation of groups with heterogeneous levels of 'tax morale'. We set up an optimal income tax model where high tax morale implies a high subjective cost of evading taxes. The model predicts that 'nice guys finish last': groups with higher tax morale will be taxed more heavily, simply because taxing them is less costly. Based on unique cross-country micro data and an IV approach to rule out reverse causality, we find empirical support fo...

  2. In situ observation of triple junction motion during recovery of heavily deformed aluminum

    DEFF Research Database (Denmark)

    Yu, Tianbo; Hughes, Darcy A.; Hansen, Niels

    2015-01-01

    -junctions are pinned by deformation-induced interconnecting and lamellar boundaries, which slow down the recovery process and lead to a stop-go migration pattern. This pinning mechanism stabilizes the deformation microstructure, i.e. the structure is stabilized by balancing the driving and pinning forces controlling......Microstructural evolution during in situ annealing of heavily cold-rolled aluminum has been studied by transmission electron microscopy, confirming that an important recovery mechanism is migration of triple junctions formed by three lamellar boundaries (Y-junctions). The migrating Y...

  3. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    OpenAIRE

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the experiments in UHV At the surface of freshly cleaved samples, we have observed sodium nano-precipitates with shapes, which depend on the irradiation dose and the volume fraction of the radiolytic Na...

  4. An X-ray wave theory for heavily distorted crystals. 1

    International Nuclear Information System (INIS)

    Ohkawa, T.; Hashimoto, H.

    1985-01-01

    An X-ray diffraction theory is developed of monochromatic waves having spherical wave front, which is applicable to an interpretation of divergent X-ray diffraction images of crystals containing arbitral types of strain field. The theory is divided into two parts. In part I, Takagi's theory is expanded by introducing amplitude and phase correction functions and a new improved representation for the X-ray diffraction theory is given. In part II dispersion surfaces in heavily distorted crystals are discussed, and in the discussion the resonance shift functions are introduced. These formulations can lead to a complete understanding of the extinction phenomena. (author)

  5. Quantitative Microstructural Characterization of Thick Aluminum Plates Heavily Deformed Using Equal Channel Angular Extrusion

    DEFF Research Database (Denmark)

    Mishin, Oleg; Segal, V.M.; Ferrasse, S.

    2012-01-01

    A detailed quantitative analysis of the microstructure has been performed in three orthogonal planes of 15-mm-thick aluminum plates heavily deformed via two equal channel angular extrusion (ECAE) routes. One route was a conventional route A with no rotation between passes. Another route involved...... sequential 90 deg rotations about the normal direction (ND) between passes. The microstructure in the center of these plates, and especially the extent of microstructural heterogeneity, has been characterized quantitatively and compared with that in bar samples extruded via either route A or route Bc with 90...... Bc. © The Minerals, Metals & Materials Society and ASM International 2012...

  6. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  7. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  8. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  9. Genetics evaluation of phosphorus utilization in tropical cowpea ...

    African Journals Online (AJOL)

    Genetics evaluation of phosphorus utilization in tropical cowpea (Vigna ... that responds negatively to RP, using generation mean analysis of the parents, their ... was observed to be below the critical level, phosphorus uptake in the F1 and the ...

  10. Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

    International Nuclear Information System (INIS)

    Montanez, A.; Zapata, F.; Kumarasinghe, K.S.

    1996-01-01

    A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. 15 N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs

  11. Sargasso Sea phosphorus biogeochemistry: an important role for dissolved organic phosphorus (DOP

    Directory of Open Access Journals (Sweden)

    M. W. Lomas

    2010-02-01

    Full Text Available Inorganic phosphorus (SRP concentrations in the subtropical North Atlantic are some of the lowest in the global ocean and have been hypothesized to constrain primary production. Based upon data from several transect cruises in this region, it has been hypothesized that dissolved organic phosphorus (DOP supports a significant fraction of primary production in the subtropical North Atlantic. In this study, a time-series of phosphorus biogeochemistry is presented for the Bermuda Atlantic Time-series Study site, including rates of phosphorus export. Most parameters have a seasonal pattern, although year-over-year variability in the seasonal pattern is substantial, likely due to differences in external forcing. Suspended particulate phosphorus exhibits a seasonal maximum during the spring bloom, despite the absence of a seasonal peak in SRP. However, DOP concentrations are at an annual maximum prior to the winter/spring bloom and decline over the course of the spring bloom while whole community alkaline phosphatase activities are highest. As a result of DOP bioavailability, the growth of particles during the spring bloom occurs in Redfield proportions, though particles exported from the euphotic zone show rapid and significant remineralization of phosphorus within the first 50 m below the euphotic zone. Based upon DOP data from transect cruises in this region, the southward cross gyral flux of DOP is estimated to support ~25% of annual primary production and ~100% of phosphorus export. These estimates are consistent with other research in the subtropical North Atlantic and reinforce the hypothesis that while the subtropics may be phosphorus stressed (a physiological response to low inorganic phosphorus, utilization of the DOP pool allows production and accumulation of microbial biomass at Redfield proportions.

  12. Effect of phosphorus sources on phosphorus and nitrogen utilization by three sweet potato cultivars

    Energy Technology Data Exchange (ETDEWEB)

    Montanez, A; Zapata, F [FAO/IAEA Agriculture and Biotechnology Lab., Seibersdorf (Austria). Soils Science Unit; Kumarasinghe, K S [Joint FAO/IAEA Div. of Nuclear Techniques in Food and Agriculture, Vienna (Austria). Soil Fertility, Irrigation and Crop Production Section

    1996-07-01

    A greenhouse experiment was conducted at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria using three sweet potato cultivars, TIS 2, TIS 3053 and TIS 1487. The three sweet potato cultivars were grown at two levels of phosphorus (0 kg P/kg soil and 60 kg P/kg soil). The fertilizer treatments consisted of two sources of phosphorus, Gafza rock Phosphate and triple super phosphate with 14.19 and 19.76% total phosphorus, respectively. {sup 15}N labelled urea was used to study the nitrogen recovery in tubers from the applied nitrogen fertilizer. The results from these preliminary studies indicate that there is considerable genotypic variation among cultivars in the efficiency with which phosphorus and nitrogen are taken up and used to produce biomass. Their response to different sources of phosphorus are also variable. TIS-2 and TIS-1487 have a greater ability to absorb phosphorus from Gafza rock phosphate and produce higher tube yields indicating their greater potential for using alternative sources of natural phosphate fertilizers more effectively. Gafza rock phosphate also increased accumulation of nitrogen in TIS-1487, a characteristic which will place this cultivar at an advantage when growing in soils low in nitrogen. On an overall basis taking into account tuber yield, phosphorus use efficiency, and nitrogen use efficiency, TIS-2 may be considered the better candidate for introduction into soils poor in resources particularly phosphorus. This study was conducted with a limited number of cultivars due to limitation in the availability of germplasma. In spite of this, the differences in their abilities for phosphorus and nitrogen uptake and use are clearly visible which justifies large scale screening experiments using a broader germplasm base, in the future. (author). 14 refs, 1 fig., 3 tabs.

  13. Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

    Energy Technology Data Exchange (ETDEWEB)

    Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P [Synchrotron Soleil, L' Orme des Merisiers, BP 48, 91192 Gif sur Yvette (France); Brunet, F [Laboratoire de Geologie, CNRS-ENS-UMR8538, 24 rue Lhommond, 75005 Paris (France); Irifune, T [Geodynamics Research Center, Ehime University, Matsuyama 790-8577 (Japan)

    2009-11-15

    Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO{sub 4} groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO{sub 6} groups). This new coordination was achieved in AlPO{sub 4} doped SiO{sub 2} stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100{mu}m diameter) were embedded in the back-transformation products of high pressure form of AlPO{sub 4} matrix. They were identified by elemental mapping ({mu}-XRF). {mu}-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

  14. Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

    Science.gov (United States)

    Flank, A.-M.; Trcera, N.; Brunet, F.; Itié, J.-P.; Irifune, T.; Lagarde, P.

    2009-11-01

    Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO6 groups). This new coordination was achieved in AlPO4 doped SiO2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

  15. Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

    International Nuclear Information System (INIS)

    Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P; Brunet, F; Irifune, T

    2009-01-01

    Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO 4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO 6 groups). This new coordination was achieved in AlPO 4 doped SiO 2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO 4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

  16. Regulating phosphorus from the agricultural sector

    DEFF Research Database (Denmark)

    Hansen, Line Block; Hansen, Lars Gårn; Rubæk, Gitte Holton

    2010-01-01

      Loss of phosphorus (P) from agricultural areas is one of the main contributors to eutrophication of water systems in many European countries. Regulatory systems such as ambient taxes or discharge taxes which are suitable for regulation of N are insufficient for regulating P because these systems...... do not take into account the importance of P already stored in the soils. Phosphorus stored in the soils is the major source of P losses to surface waters, but at the same time crucial for the soils ability to sustain a viable crop production. Even if measures on P losses from agricultural areas...

  17. Determination of traces of phosphorus using isotope exchange

    International Nuclear Information System (INIS)

    Zeman, A.; Kratzer, K.

    1976-01-01

    A simple and selective radioanalytical method for the determination of phosphorus (0.015 - 5 μg in a 5 ml sample), based on the heterogeneous isotope exchange, has been developed. The sample containing phosphorus is shaken in the presence of molybdate with a standard solution of tetraphenylarsonium molybdophosphate labelled with phosphorus-32 in 1-2 dicloroethan. From the distribution of the activity between the aqueous and organic phases the amount of phosphorus in the sample can be determined. (Authors)

  18. Phosphorus-containing macrocyclic compounds: synthesis and properties

    International Nuclear Information System (INIS)

    Knyazeva, I R; Burilov, Alexander R; Pudovik, Michael A; Habicher, Wolf D

    2013-01-01

    Main trends in the development of methods for the synthesis of phosphorus-containing macrocyclic compounds in the past 15 years are considered. Emphasis is given to reactions producing macrocyclic structures with the participation of a phosphorus atom and other functional groups involved in organophosphorus molecules and to modifications of macrocycles by phosphorus compounds in different valence states. Possibilities of the practical application of phosphorus-containing macrocyclic compounds in difference areas of science and engineering are discussed. The bibliography includes 205 references.

  19. Production of carrier-free phosphorus-33 at MURR

    International Nuclear Information System (INIS)

    Jia, W.; Ketring, A.R.; Schuh, J.; Lanigan, J.; Ma, D.; Manson, L.; Chanley, D.

    1996-01-01

    Phosphorus-33, a new radionuclide used in medical and biochemical research, is produced at the University of Missouri research reactor (MURR) in production quantities. Phosphorus-33 has a longer shelf life and lower dose rates than phosphorus-32. Recently, the MURR and New England Nuclear (NEN) jointly developed a method to recover carrier-free phosphorus-33 as well as the enriched sulfur target using a sublimation technique at reduced pressure

  20. Health-enhancing doping controls

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    2010-01-01

    Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...

  1. Stark shift of impurity doped quantum dots: Role of noise

    Science.gov (United States)

    Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

    2018-02-01

    Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

  2. Phosphorus in virgin peat soils

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1956-01-01

    coefficient after the elimination of the effects of total P and N contents was only r = 0.136. No significant correlation existed between the organic P content and the N content, r = 0.184. The organic P content of the 217 samples expressed as a percentage of the total P content ranged from 55 to 95 per cent with an average of 78 ± 1 per cent. The proportion of organic P of total P was correlated with the degree of humification, the total correlation coefficient was r = 0.504***, the partial correlation coefficient after the elimination of the effect of the sampling depth was r = 0.427***. No correlation with the sampling depth existed after the elimination of the effect of the degree of humification: the partial correlation coefficient was r = 0.159, whereas the total correlation coefficient was r = 0.334***. A low correlation existed between the percentage of organic P of total P and the pH value even after the elimination of the effect of the degree of humification, r = 0.228*, but the connection with the total P content appeared to be only indirect and arised from the effect of the degree of humification, the total correlation coefficient was r = 0.222*, the partial correlation coefficient r = 0.076. The amount of organic P expressed as a percentage of the organic dry matter ranged from 0.01 to 0.25 per cent with an average of 0.07 ± 0.004. The ratio of N/org.P ranged from 12 to 133 with an average of 45 ± 3. Owing to the low P content of the BCp-group its mean ratio was significantly higher than that of the other groups. The degree of humification did not show any correlation with the ratio of N/org.P. The solubility of inorganic P in 0.5 N acetic acid and in 0.2 N sulphuric acid was highest in the Sp-group. On the average approximately from 15 to 30 per cent of total inorganic P was extracted by the latter solution. The acetic acid extracted only about 2 per cent of the inorganic P in the Cp-group but about 15 per cent in the Sp-group. The phosphorus conditions in

  3. Marine reserves and reproductive biomass: a case study of a heavily targeted reef fish.

    Directory of Open Access Journals (Sweden)

    Brett M Taylor

    Full Text Available Recruitment overfishing (the reduction of a spawning stock past a point at which the stock can no longer replenish itself is a common problem which can lead to a rapid and irreversible fishery collapse. Averting this disaster requires maintaining a sufficient spawning population to buffer stochastic fluctuations in recruitment of heavily harvested stocks. Optimal strategies for managing spawner biomass are well developed for temperate systems, yet remain uncertain for tropical fisheries, where the danger of collapse from recruitment overfishing looms largest. In this study, we explored empirically and through modeling, the role of marine reserves in maximizing spawner biomass of a heavily exploited reef fish, Lethrinus harak around Guam, Micronesia. On average, spawner biomass was 16 times higher inside the reserves compared with adjacent fished sites. Adult density and habitat-specific mean fish size were also significantly greater. We used these data in an age-structured population model to explore the effect of several management scenarios on L. harak demography. Under minimum-size limits, unlimited extraction and all rotational-closure scenarios, the model predicts that preferential mortality of larger and older fish prompt dramatic declines in spawner biomass and the proportion of male fish, as well as considerable declines in total abundance. For rotational closures this occurred because of the mismatch between the scales of recovery and extraction. Our results highlight how alternative management scenarios fall short in comparison to marine reserves in preserving reproductively viable fish populations on coral reefs.

  4. Cytogenetic abnormalities of the descendants of permanent residents of heavily contaminated East Kazakhstan.

    Science.gov (United States)

    Chaizhunusova, Nailya; Madiyeva, Madina; Tanaka, Kimio; Hoshi, Masaharu; Kawano, Noriyuki; Noso, Yoshihiro; Takeichi, Nobuo; Rakhypbekov, Tolebay; Urazalina, Nailya; Dovgal, Galina; Rymbaeva, Tamara; Tokanova, Sholpan; Beisengazina, Meruert; Kembayeva, Kulypash; Inoue, Ken

    2017-11-01

    More than 400 nuclear explosion tests were conducted at the Semipalatinsk Nuclear Test Site (SNTS) and significant radioactive substances were released. The long-term consequences of the activities at the SNTS and the appearance of any hereditary effects remain insufficiently studied about 25 years after the test site was closed. The population living in villages near the SNTS are considered to have been heavily exposed to external and internal radiation. This study aims to perform an assessment and comprehensive cytogenetic analysis of the inhabitants living near the SNTS, and their first-(F1) and second-(F2) generation children. Residents of the East Kazakhstan region living in the area covered by the former SNTS were included in the study. To evaluate the hereditary effects of nuclear testing, comprehensive chromosome analyses were performed in lymphocytes using conventional Giemsa and fluorescent in situ hybridization methods in 115 F1 and F2 descendants in the villages of Dolon and Sarzhal, which were heavily contaminated. The parents of the subjects had permanently lived in the villages. A higher number of stable-type chromosome aberrations such as translocations was found in these residents than in 80 residents of the control area, Kokpecty, which indicates the possibility that radiation had biological effects on the exposed subjects.

  5. Yield strength of a heavily drawn Cu-20% Nb filamentary microcomposite

    International Nuclear Information System (INIS)

    Hong, S.I.

    1998-01-01

    It has been well documented that heavily-drawn, copper-niobium microcomposites possess high strength and high conductivity. Since niobium has little solubility in copper, the conductivity of the copper is not strongly affected by the addition of niobium. Following extensive mechanical deformation of Cu-Nb, niobium dendrites transform into fine niobium ribbons as a result of the niobium texture upon drawing. This nanostructure contributes to the ultrahigh strength of Cu-Nb microcomposites. The strength of heavily deformed Cu-Nb exceeds that predicted by the rule-of-mixtures (ROM), and a fundamental understanding of the strengthening mechanisms involved has been the subject of much discussion. Spitzig and his coworkers suggests a barrier strengthening model while Funkenbusch and Courtney believe that stored dislocations have a role in substructural hardening. Hangen and Raabe recently proposed an analytical model for the calculation of the yield strength of Cu-Nb microcomposite. The model of Hangen and Raabe and that of Spitzig and his coworkers have a great deal of resemblance since both models attribute the strength to the difficulty of propagating plastic flow through the interface. The purpose of this study was to enhance the understanding of the strengthening mechanisms associated with Cu-Nb microcomposites by examining the previous studies on mechanical and microstructural stability of Cu-based microcomposites

  6. Phosphorus analysis in milk samples by neutron activation analysis method

    International Nuclear Information System (INIS)

    Oliveira, R.M. de; Cunha, I.I.L.

    1991-01-01

    The determination of phosphorus in milk samples by instrumental thermal neutron activation analysis is described. The procedure involves a short irradiation in a nuclear reactor and measurement of the beta radiation emitted by phosphorus - 32 after a suitable decay period. The sources of error were studied and the established method was applied to standard reference materials of known phosphorus content. (author)

  7. Phosphorus Uptake and Partitioning in Maize as Affected by Tillage ...

    African Journals Online (AJOL)

    Higher phosphorus concentrations were found in the ears than in the shoots and leaves at physiological maturity. Tillage x phospho-rus interactions influenced phosphorus partitioning in the ears and the leaves on the Dystric Cam-bisol but not on the Ferric Acrisol. PUE in the plant parts were significantly higher under ...

  8. Reaching ultra low phosphorus concentrations by filtration techniques

    NARCIS (Netherlands)

    Scherrenberg, S.M.

    2011-01-01

    This research deals with tertiary treatment techniques used for the removal of phosphorus from wastewater treatment plant (WWTP) effluent. The main objective of this research is to obtain ultra low total phosphorus (<0.15 mg total phosphorus/L) concentrations by coagulation, flocculation and

  9. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  10. Doping of two-dimensional MoS2 by high energy ion implantation

    Science.gov (United States)

    Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

    2017-12-01

    Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

  11. Gene doping in sports.

    Science.gov (United States)

    Unal, Mehmet; Ozer Unal, Durisehvar

    2004-01-01

    Gene or cell doping is defined by the World Anti-Doping Agency (WADA) as "the non-therapeutic use of genes, genetic elements and/or cells that have the capacity to enhance athletic performance". New research in genetics and genomics will be used not only to diagnose and treat disease, but also to attempt to enhance human performance. In recent years, gene therapy has shown progress and positive results that have highlighted the potential misuse of this technology and the debate of 'gene doping'. Gene therapies developed for the treatment of diseases such as anaemia (the gene for erythropoietin), muscular dystrophy (the gene for insulin-like growth factor-1) and peripheral vascular diseases (the gene for vascular endothelial growth factor) are potential doping methods. With progress in gene technology, many other genes with this potential will be discovered. For this reason, it is important to develop timely legal regulations and to research the field of gene doping in order to develop methods of detection. To protect the health of athletes and to ensure equal competitive conditions, the International Olympic Committee, WADA and International Sports Federations have accepted performance-enhancing substances and methods as being doping, and have forbidden them. Nevertheless, the desire to win causes athletes to misuse these drugs and methods. This paper reviews the current status of gene doping and candidate performance enhancement genes, and also the use of gene therapy in sports medicine and ethics of genetic enhancement. Copyright 2004 Adis Data Information BV

  12. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Challenges and threats to implementing the fight against doping in sport.

    Science.gov (United States)

    Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

    2014-05-01

    Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

  15. A review of phosphorus removal structures

    DEFF Research Database (Denmark)

    Penn, Chad; Chagas, Isis; Klimeski, Aleksandar

    2017-01-01

    Controlling dissolved phosphorus (P) losses to surface waters is challenging as most conservation practices are only effective at preventing particulate P losses. As a result, P removal structures were developed to filter dissolved P from drainage water before reaching a water body. While many P ...

  16. The future of phosphorus in our hands

    NARCIS (Netherlands)

    Shepherd, J.G.; Kleemann, Rosanna; Bahri-Esfahani, Jaleh; Hudek, Lee; Suriyagoda, Lalith; Vandamme, Elke; Dijk, van K.C.

    2016-01-01

    We live in a global phosphorus (P) system paradox. P access is becoming increasingly limiting, leading to food insecurity but at the same time an over-application or abundance of P in many agricultural and urban settings is causing environmental degradation. This has been recognised in the

  17. Stewardship to tackle global phosphorus inefficiency

    NARCIS (Netherlands)

    Withers, P.J.A.; Dijk, van K.C.; Neset, T.S.S.; Nesme, Thomas; Oenema, Oene; Rubæk, G.H.; Schoumans, O.F.; Smit, Bert; Pellerin, Sylvain

    2015-01-01

    The inefficient use of phosphorus (P) in the food chain is a threat to the global aquatic environment and the health and well-being of citizens, and it is depleting an essential finite natural resource critical for future food security and ecosystem function. We outline a strategic framework of

  18. Process for uranium recovery in phosphorus compounds

    International Nuclear Information System (INIS)

    Demarthe, J.M.; Solar, Serge.

    1980-01-01

    Process for uranium recovery in phosphorus compounds with an organic phase containing a dialkylphosphoric acid. A solubilizing agent constituted of an heavy alcohol or a phosphoric acid ester or a tertiary phosphine oxide or octanol-2, is added to the organic phase for solubilization of the uranium and ammonium dialkyl pyrophosphate [fr

  19. Phosphate recycling in the phosphorus industry

    NARCIS (Netherlands)

    Schipper, W.J.; Klapwijk, A.; Potjer, A.; Rulkens, W.H.; Temmink, B.G.; Kiestra, F.D.G.; Lijmbach, A.C.M.

    2001-01-01

    The feasibility of phosphate recycling in the white phosphorus production process is discussed. Several types of materials may be recycled, provided they are dry inorganic materials, low in iron, copper and zinc. Sewage sludge ash may be used if no iron is used for phosphate precipitation in the

  20. Estimating phosphorus intake by grazing sheep

    African Journals Online (AJOL)

    phosphorus levels in various organs, tissues, bones, body fluids or excretory products of sheep reflected dietary ... did decrease bone mineral deposition slightly. Rumen fluid P and total daily urinary P levels did .... which were alike in composition except for their levels of. P and Ca. After 98 days rib biopsy specimens were.

  1. Flotation of uraniferous phosphorus ore from Itataia

    International Nuclear Information System (INIS)

    Aquino, J.A. de

    1984-01-01

    Flotation conditions, in laboratory and pilot scale, were established in a sample of Itataia uraniferous phosphorus ore which was basically constitute of apatite and calcite. The system of reagents-tall oil, collamil and sodium silicate-was studied in rougher, scavenger and cleaner stage. (M.A.C.) [pt

  2. Nanotubes based on monolayer blue phosphorus

    KAUST Repository

    Montes Muñoz, Enrique

    2016-07-08

    We demonstrate structural stability of monolayer zigzag and armchair blue phosphorus nanotubes by means of molecular dynamics simulations. The vibrational spectrum and electronic band structure are determined and analyzed as functions of the tube diameter and axial strain. The nanotubes are found to be semiconductors with a sensitive indirect band gap that allows flexible tuning.

  3. Phosphorus Processing—Potentials for Higher Efficiency

    Directory of Open Access Journals (Sweden)

    Ludwig Hermann

    2018-05-01

    Full Text Available In the aftermath of the adoption of the Sustainable Development Goals (SDGs and the Paris Agreement (COP21 by virtually all United Nations, producing more with less is imperative. In this context, phosphorus processing, despite its high efficiency compared to other steps in the value chain, needs to be revisited by science and industry. During processing, phosphorus is lost to phosphogypsum, disposed of in stacks globally piling up to 3–4 billion tons and growing by about 200 million tons per year, or directly discharged to the sea. Eutrophication, acidification, and long-term pollution are the environmental impacts of both practices. Economic and regulatory framework conditions determine whether the industry continues wasting phosphorus, pursues efficiency improvements or stops operations altogether. While reviewing current industrial practice and potentials for increasing processing efficiency with lower impact, the article addresses potentially conflicting goals of low energy and material use as well as Life Cycle Assessment (LCA as a tool for evaluating the relative impacts of improvement strategies. Finally, options by which corporations could pro-actively and credibly demonstrate phosphorus stewardship as well as options by which policy makers could enforce improvement without impairing business locations are discussed.

  4. interaction between phosphorus fertilizer and arbuscular ...

    African Journals Online (AJOL)

    userpc

    examine the interaction between Phosphorus (P) fertilizer and Arbuscular Mycorrhizal Fungal ... recorded 28% and 4% total plant dry yield increment respectively over control. This study shows that ... ratio 1:3 inoculant: water, application per ... Table 1: Effect of P and AMF on the dry yield components of cassava (t ha-1).

  5. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  6. Phosphate recycling in the phosphorus industry

    NARCIS (Netherlands)

    Schipper, W.J.; Klapwijk, A.; Potjer, B.; Rulkens, W.H.; Temmink, B.G.; Kiestra, F.D.G.; Lijmbach, A.C.M.

    2004-01-01

    The article describes the potential and limitations for recovery of phosphate from secondary materials in the production process for white phosphorus. This thermal process involves the feeding of phosphate rock, cokes and pebbles to a furnace. The reducing conditions in the furnace promote the

  7. 28 PHOSPHORUS FORMS AND DISTRIBUTION IN SELECTED ...

    African Journals Online (AJOL)

    sys01

    Coleman and Thomas (1967). Total phosphorus in the soils was determined by perchloric acid digestion (Jackson, 1958) and organic P was estimated by the difference between 13 M HCL extractable inorganic P, before and after ignition, by the method of Leg and Black (1955). Inorganic P was fractionated by method of.

  8. Phosphorus and phytase levels for layer hens

    Directory of Open Access Journals (Sweden)

    Juliana Cristina Ramos Rezende

    2013-02-01

    Full Text Available The objective of this research was to evaluate the performance and bone quality of laying hens after peak production fed diets containing phosphorus levels and phytase. An experiment was conducted with 384 Hy-line distributed in a completely randomized in a factorial 4 x 3 with 4 levels of available phosphorus and 3 levels of phytase. The experimental period was divided into four periods of 28 days, at the end of each cycle were determined experimental feed intake, egg production, egg weight, feed conversion, mortality, and average egg weight, shell thickness, Haugh units and specific gravity. At the end of the experimental period were determined amounts of calcium and phosphorus excreted by the method of total excreta collection and a fowl per experimental unit was sacrificed for collection of bones and evaluation of width, length and level of robustness from femur and tibia. There was interaction between phosphorus levels and phytase on feed intake, feed conversion and percentage of posture. For inclusion levels of phytase all egg quality variables showed no significant differences. The treatments did not affect bone characteristics of laying hens.

  9. Risk assessment methodologies for predicting phosphorus losses

    NARCIS (Netherlands)

    Schoumans, O.F.; Chardon, W.J.

    2003-01-01

    Risk assessment parameters are needed to assess the contribution of phosphorus (P) losses from soil to surface water, and the effectiveness of nutrient and land management strategies for the reduction of P loss. These parameters need to take into account the large temporal and spatial variation in P

  10. Stability of phosphorus species in seawater

    Digital Repository Service at National Institute of Oceanography (India)

    DileepKumar, M.; Somasundar, K.; Rajendran, A.

    Relative stabilities of various oxidation states, oxyacids and dissolved inorganic complexes of phosphorus in anoxic and oxic marine environments are elucidated. H sub(3) PO sub(2)/P super(0) and H sub(2) PO sub(2)/p super(0) are the strong reducing...

  11. Stewardship to tackle global phosphorus inefficiency

    DEFF Research Database (Denmark)

    Withers, Paul J. A.; Dijk, Kimo van; Neset, Tina-Simone

    2015-01-01

    The inefficient use of phosphorus (P) in the food chain is a threat to the global aquatic environment and the health and well-being of citizens, and it is depleting an essential finite natural resource critical for future food security and ecosystem function. We outline a strategic framework of 5R...

  12. Phosphorus recovery from sewage sludge char ash

    NARCIS (Netherlands)

    Atienza-Martinez, M.; Gea, G.; Arauzo, J.; Kersten, Sascha R.A.; Kootstra, A.M.J.

    2014-01-01

    Phosphorus was recovered from the ash obtained after combustion at different temperatures (600 °C, 750 °C and 900 °C) and after gasification (at 820 °C using a mixture of air and steam as fluidising agent) of char from sewage sludge fast pyrolysis carried out at 530 °C. Depending on the leaching

  13. Bacteria as transporters of phosphorus through soil

    DEFF Research Database (Denmark)

    Glæsner, N.; Bælum, Jacob; Jacobsen, C. S.

    2016-01-01

    The transport of phosphorus (P) from agricultural land has led to the eutrophication of surface waters worldwide, especially in areas with intensive animal production. In this research, we investigated the role of bacteria in the leaching of P through three agricultural soils with different...

  14. Phosphorus supplementation of Karakul sheep grazing natural ...

    African Journals Online (AJOL)

    The phosphorus (P) status of adult Karakul ewes grazing natural pasture was determined by measuring the P content of blood, saliva, faecal, and bone samples. The ewes were divided into four groups of 20 ewes each, viz. ewes supplemented with P+ and P- which lambed during May and October. All lambs born were ...

  15. Use of reactive materials to bind phosphorus

    NARCIS (Netherlands)

    Chardon, W.J.; Groenenberg, J.E.; Temminghoff, E.J.M.; Koopmans, G.F.

    2012-01-01

    Phosphorus (P) losses from agricultural soils have caused surface water quality impairment in many regions of the world, including The Netherlands. Due to the large amounts of P accumulated in Dutch soils, the generic fertilizer and manure policy will not be sufficient to reach in time the surface

  16. Phosphorus effect on fracture properties of structural steels

    International Nuclear Information System (INIS)

    Goritskij, V.M.; Guseva, I.A.

    1985-01-01

    Phosphorus content is studied for its effect on fracture peculiarities and fracture toughness. It is supposed that the phosphorus effect on ductile fractures is associated with phosphorus segregation on the ferrite-carbide interfaces. An increase of the phosphorus content in heat-treated 10KhSND steel from 0.020 up to 0.043 wt.% results in a decrease of the pore size and asub(p) value. Close linear correlation is established between critical temperature of embrittlement T 50 and √ asub(p) or √ KC values for a number of structural steels with different phosphorus content

  17. Biological phosphorus uptake under anoxic and aerobic conditions

    DEFF Research Database (Denmark)

    Kerrn-Jespersen, Jens Peter; Henze, Mogens

    1993-01-01

    Biological phosphorus removal was investigated under anoxic and aerobic conditions. Tests were made to establish whether phosphorus accumulating bacteria can take up phosphate under anoxic conditions and thus utilise nitrate as oxidant. Furthermore, it was tested how the amount of organic matter...... as oxidant. The phosphorus uptake was more rapid under aerobic conditions than under anoxic conditions. The explanation of this is that all phosphorus accumulating bacteria take up phosphate under aerobic conditions, whereas only part of the phosphorus accumulating bacteria take up phosphate under anoxic...

  18. Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

    DEFF Research Database (Denmark)

    Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

    2015-01-01

    The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

  19. Launch prices for new pharmaceuticals in the heavily regulated and subsidized Spanish market, 1995-2007.

    Science.gov (United States)

    Puig-Junoy, Jaume; López-Valcárcel, Beatriz González

    2014-06-01

    This paper provides empirical evidence on the explanatory factors affecting introductory prices of new pharmaceuticals in a heavily regulated and highly subsidized market. We collect a data set consisting of all new chemical entities launched in Spain between 1997 and 2005, and model launch prices following an extended version of previous economic models. We found that, unlike in the US and Sweden, therapeutically "innovative" products are not overpriced relative to "imitative" ones after having controlled for other factors. Price setting is mainly used as a mechanism to adjust for inflation independently of the degree of innovation. The drugs that enter through the centralized EMA approval procedure are overpriced, which may be a consequence of market globalization and international price setting. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  20. Facilitating political decisions using species distribution models to assess restoration measures in heavily modified estuaries.

    Science.gov (United States)

    Heuner, Maike; Weber, Arnd; Schröder, Uwe; Kleinschmit, Birgit; Schröder, Boris

    2016-09-15

    The European Water Framework Directive requires a good ecological potential for heavily modified water bodies. This standard has not been reached for most large estuaries by 2015. Management plans for estuaries fall short in linking implementations between restoration measures and underlying spatial analyses. The distribution of emergent macrophytes - as an indicator of habitat quality - is here used to assess the ecological potential. Emergent macrophytes are capable of settling on gentle tidal flats where hydrodynamic stress is comparatively low. Analyzing their habitats based on spatial data, we set up species distribution models with 'elevation relative to mean high water', 'mean bank slope', and 'length of bottom friction' from shallow water up to the vegetation belt as key predictors representing hydrodynamic stress. Effects of restoration scenarios on habitats were assessed applying these models. Our findings endorse species distribution models as crucial spatial planning tools for implementing restoration measures in modified estuaries. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Chromosome aberrations of bone marrow cells in heavily exposed atomic bomb survivors

    International Nuclear Information System (INIS)

    Tanaka, Kimio; Kamada, Nanao; Kuramoto, Atsushi; Ohkita, Takeshi

    1986-01-01

    Seven hundred and ten bone marrow cells from 13 A-bomb survivors, who were heavily exposed to atomic radiation, were examined using chromosome banding method. An average frequency of chromosome aberrations was 17 %. The most common structural abnormality was translocation (47 %), followed by complex aberrations involving three or more chromosomes (32 %). These abnormalities were frequently seen in A-bomb survivors exposed to estimated doses of 3.5 - 4.0 Gy. Eighty two percent of the structural aberrations were stable. Diploid cells were seen in 0.4 % and tetraploid cells were seen in 0.7 %. The frequency of breakpoint sites was high in chromosomes 1 and 17; while it was low in chromosomes 3, 6, 9, and 11. Abnormal clones were seen in one of the 13 survivors. Chromosome aberrations common to the bone marrow cells and peripheral lymphocytes were not seen in the same individual. (Namekawa, K.)

  2. Induction hardening of tool steel for heavily loaded aircraft engine components

    Directory of Open Access Journals (Sweden)

    Rokicki P.

    2017-03-01

    Full Text Available Induction hardening is an innovative process allowing modification of the materials surface with more effective, cheaper and more reproducible way to compare with conventional hardening methods used in the aerospace industry. Unfortunately, high requirements and strict regulation concerning this branch of the industry force deep research allowing to obtain results that would be used for numerical modelling of the process. Only by this way one is able to start the industrial application of the process. The main scope of presented paper are results concerning investigation of microstructure evolution of tool steel after single-frequency induction hardening process. The specimens that aim in representing final industrial products (as heavily loaded gears, were heat- -treated with induction method and subjected to metallographic preparation, after which complex microstructure investigation was performed. The results obtained within the research will be a basis for numerical modelling of the process of induction hardening with potential to be introduced for the aviation industrial components.

  3. AN AMELIORATED DETECTION STATISTICS FOR ADAPTIVE MASK MEDIAN FILTRATION OF HEAVILY NOISED DIGITAL IMAGES

    Directory of Open Access Journals (Sweden)

    Geeta Hanji

    2016-11-01

    Full Text Available Noise reduction is an important area of research in image processing applications. The performance of the digital image noise filtering method primarily depends upon the accuracy of noise detection scheme. This paper presents an effective detector based, adaptive mask, median filtration of heavily noised digital images affected with fixed value (or salt and pepper impulse noise. The proposed filter presents a novel approach; an ameliorated Rank Ordered Absolute Deviation (ROAD statistics to judge whether the input pixel is noised or noise free. If a pixel is detected as corrupted, it is subjected to adaptive mask median filtration; otherwise, it is kept unchanged. Extensive experimental results and comparative performance evaluations demonstrate that the proposed filter outperforms the existing decision type, median based filters with powerful noise detectors in terms of objective performance measures and visual retrieviation accuracy.

  4. Ecophysiological characterization of early successional biological soil crusts in heavily human-impacted areas

    Science.gov (United States)

    Szyja, Michelle; Büdel, Burkhard; Colesie, Claudia

    2018-04-01

    Ecophysiological characterizations of photoautotrophic communities are not only necessary to identify the response of carbon fixation related to different climatic factors, but also to evaluate risks connected to changing environments. In biological soil crusts (BSCs), the description of ecophysiological features is difficult, due to the high variability in taxonomic composition and variable methodologies applied. Especially for BSCs in early successional stages, the available datasets are rare or focused on individual constituents, although these crusts may represent the only photoautotrophic component in many heavily disturbed ruderal areas, such as parking lots or building areas with increasing surface area worldwide. We analyzed the response of photosynthesis and respiration to changing BSC water contents (WCs), temperature and light in two early successional BSCs. We investigated whether the response of these parameters was different between intact BSC and the isolated dominating components. BSCs dominated by the cyanobacterium Nostoc commune and dominated by the green alga Zygogonium ericetorum were examined. A major divergence between the two BSCs was their absolute carbon fixation rate on a chlorophyll basis, which was significantly higher for the cyanobacterial crust. Nevertheless, independent of species composition, both crust types and their isolated organisms had convergent features such as high light acclimatization and a minor and very late-occurring depression in carbon uptake at water suprasaturation. This particular setup of ecophysiological features may enable these communities to cope with a high variety of climatic stresses and may therefore be a reason for their success in heavily disturbed areas with ongoing human impact. However, the shape of the response was different for intact BSC compared to separated organisms, especially in absolute net photosynthesis (NP) rates. This emphasizes the importance of measuring intact BSCs under natural

  5. Relationship between levels of serum creatinine and perirenal hyperintensity on heavily T2-weighted MR images

    Energy Technology Data Exchange (ETDEWEB)

    Erden, Ayse, E-mail: ayse.erden@medicine.ankara.edu.tr [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Sahin, Burcu Savran, E-mail: bsavrans@hotmail.com [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Orgodol, Horolsuren, E-mail: hoogii99@yahoo.com [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Erden, Ilhan, E-mail: erden@medicine.ankara.edu.tr [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Biyikli, Zeynep, E-mail: zeynep.biyikli@gmail.com [Ankara University, School of Medicine, Department of Biostatistics, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey)

    2011-11-15

    Objective: To determine the frequency of perirenal hyperintensity on heavily T2-weighted images and to evaluate its relationship with serum creatinine levels. Subjects and methods: Axial and coronal single-shot fast spin-echo images which have been originally obtained for MR cholangiopancreatography in 150 subjects were examined by two observers individually for the presence of perirenal hyperintensity. The morphologic properties of perirenal hyperintensity (peripheral rim-like, discontinuous, polar) were recorded. Chi square test was used to test whether the frequencies of bilateral perirenal hyperintensity differ significantly in subjects with high serum creatinine levels and those with normal creatinine levels. This test was also used to compare the frequencies of perirenal hyperintensity in patients with and without renal cysts and in patients with and without corticomedullary differentiation. A p value of less than 0.05 was considered to be statistically significant. Results: The perirenal hyperintensity was identified in 40 of 150 cases (26.6%) on heavily T2-weighted image. Serum creatinine levels were high in 18 of 150 cases (12%). The perirenal hyperintensity was present in 11 of 18 subjects (61%) with high serum creatinine levels and 26 of 132 subjects (19.7%) with normal creatinine levels. The difference of rates in two groups was statistically significant. Odds ratio was 6407 (95% confidence interval 2264-18,129). The frequency of perirenal hyperintensity was also significantly higher in subjects with renal cyst or cysts in whom serum creatinine levels were normal (p < 0.05) (37.5% vs. 11.8%). Conclusion: Perirenal hyperintensities are more frequent in patients with high serum creatinine levels. They are also more common in patients with simple renal cysts.

  6. Relationship between levels of serum creatinine and perirenal hyperintensity on heavily T2-weighted MR images

    International Nuclear Information System (INIS)

    Erden, Ayse; Sahin, Burcu Savran; Orgodol, Horolsuren; Erden, Ilhan; Biyikli, Zeynep

    2011-01-01

    Objective: To determine the frequency of perirenal hyperintensity on heavily T2-weighted images and to evaluate its relationship with serum creatinine levels. Subjects and methods: Axial and coronal single-shot fast spin-echo images which have been originally obtained for MR cholangiopancreatography in 150 subjects were examined by two observers individually for the presence of perirenal hyperintensity. The morphologic properties of perirenal hyperintensity (peripheral rim-like, discontinuous, polar) were recorded. Chi square test was used to test whether the frequencies of bilateral perirenal hyperintensity differ significantly in subjects with high serum creatinine levels and those with normal creatinine levels. This test was also used to compare the frequencies of perirenal hyperintensity in patients with and without renal cysts and in patients with and without corticomedullary differentiation. A p value of less than 0.05 was considered to be statistically significant. Results: The perirenal hyperintensity was identified in 40 of 150 cases (26.6%) on heavily T2-weighted image. Serum creatinine levels were high in 18 of 150 cases (12%). The perirenal hyperintensity was present in 11 of 18 subjects (61%) with high serum creatinine levels and 26 of 132 subjects (19.7%) with normal creatinine levels. The difference of rates in two groups was statistically significant. Odds ratio was 6407 (95% confidence interval 2264-18,129). The frequency of perirenal hyperintensity was also significantly higher in subjects with renal cyst or cysts in whom serum creatinine levels were normal (p < 0.05) (37.5% vs. 11.8%). Conclusion: Perirenal hyperintensities are more frequent in patients with high serum creatinine levels. They are also more common in patients with simple renal cysts.

  7. Borazino-Doped Polyphenylenes.

    Science.gov (United States)

    Marinelli, Davide; Fasano, Francesco; Najjari, Btissam; Demitri, Nicola; Bonifazi, Davide

    2017-04-19

    The divergent synthesis of two series of borazino-doped polyphenylenes, in which one or more aryl units are replaced by borazine rings, is reported for the first time, taking advantage of the decarbonylative [4 + 2] Diels-Alder cycloaddition reaction between ethynyl and tetraphenylcyclopentadienone derivatives. Because of the possibility of functionalizing the borazine core with different groups on the aryl substituents at the N and B atoms of the borazino core, we have prepared borazino-doped polyphenylenes featuring different doping dosages and orientations. To achieve this, two molecular modules were prepared: a core and a branching unit. Depending on the chemical natures of the central aromatic module and the reactive group, each covalent combination of the modules yields one exclusive doping pattern. By means of this approach, three- and hexa-branched hybrid polyphenylenes featuring controlled orientations and dosages of the doping B 3 N 3 rings have been prepared. Detailed photophysical investigations showed that as the doping dosage is increased, the strong luminescent signal is progressively reduced. This suggests that the presence of the B 3 N 3 rings engages additional deactivation pathways, possibly involving excited states with an increasing charge-separated character that are restricted in the full-carbon analogues. Notably, a strong effect of the orientational doping on the fluorescence quantum yield was observed for those hybrid polyphenylene structures featuring low doping dosages. Finally, we showed that Cu-catalyzed 1,3-dipolar cycloaddition is also chemically compatible with the BN core, further endorsing the inorganic benzene as a versatile aromatic scaffold for engineering of molecular materials with tailored and exploitable optoelectronic properties.

  8. Sewage-effluent phosphorus: A greater risk to river eutrophication than agricultural phosphorus?

    International Nuclear Information System (INIS)

    Jarvie, Helen P.; Neal, Colin; Withers, Paul J.A.

    2006-01-01

    Phosphorus (P) concentrations from water quality monitoring at 54 UK river sites across seven major lowland catchment systems are examined in relation to eutrophication risk and to the relative importance of point and diffuse sources. The over-riding evidence indicates that point (effluent) rather than diffuse (agricultural) sources of phosphorus provide the most significant risk for river eutrophication, even in rural areas with high agricultural phosphorus losses. Traditionally, the relative importance of point and diffuse sources has been assessed from annual P flux budgets, which are often dominated by diffuse inputs in storm runoff from intensively managed agricultural land. However, the ecological risk associated with nuisance algal growth in rivers is largely linked to soluble reactive phosphorus (SRP) concentrations during times of ecological sensitivity (spring/summer low-flow periods), when biological activity is at its highest. The relationships between SRP and total phosphorus (TP; total dissolved P + suspended particulate P) concentrations within UK rivers are evaluated in relation to flow and boron (B; a tracer of sewage effluent). SRP is the dominant P fraction (average 67% of TP) in all of the rivers monitored, with higher percentages at low flows. In most of the rivers the highest SRP concentrations occur under low-flow conditions and SRP concentrations are diluted as flows increase, which is indicative of point, rather than diffuse, sources. Strong positive correlations between SRP and B (also TP and B) across all the 54 river monitoring sites also confirm the primary importance of point source controls of phosphorus concentrations in these rivers, particularly during spring and summer low flows, which are times of greatest eutrophication risk. Particulate phosphorus (PP) may form a significant proportion of the phosphorus load to rivers, particularly during winter storm events, but this is of questionable relevance for river eutrophication

  9. Spectroscopic XPEEM of highly conductive SI-doped GaN wires

    Energy Technology Data Exchange (ETDEWEB)

    Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

    2015-12-15

    Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

  10. Phosphorus recycling from an unexplored source by polyphosphate accumulating microalgae and cyanobacteria – a step to phosphorus security in agriculture

    Directory of Open Access Journals (Sweden)

    Chandan eMukherjee

    2015-12-01

    Full Text Available Phosphorus (P, an essential element required for crop growth has no substitute. The global food security depends on phosphorus availability in soil for crop production. World phosphorus reserves are fast depleting and with an annual increase of 2.3% in phosphorus demand, the current reserves will be exhausted in coming 50-100 years. India and other Western countries are forced to import phosphorus fertilizers at high costs to meet their agricultural demands due to uneven distribution of phosphate rocks on earth. The present study from India, aims to draw attention to an unnoticed source of phosphorus being wasted as parboiled rice mill effluent and subsequent bio-recovery of the valuable element from this unconventional source. The research was conducted in West Bengal, India, a state with the highest number of parboiled rice mills where its effluent carries on an average ~40 mg/L of soluble phosphorus. Technology to recover and recycle this wastewater P in India in a simple, inexpensive mode is yet to be optimized. Our strategy to use microalgae, Chlorella sp. and cyanobacteria, Cyanobacterium sp., Lyngbya sp. and Anabaena sp. to sequester the excess phosphorus from the effluent as polyphosphate inclusions and its subsequent recycling as slow and moderate release phosphorus biofertilizers to aid plant growth, preventing phosphorus loss and pollution, is a contemporary venture to meet the need of the hour. These polyphosphate accumulating microorganisms play a dual role of remediation and recovery of phosphorus, preliminarily validated in laboratory scale.

  11. The location and nature of accumulated phosphorus in seven sludges from activated sludge plants which exhibited enhanced phosphorus removal

    International Nuclear Information System (INIS)

    Buchan, L.

    1981-01-01

    Electron microscopy combined with the energy dispersive analysis of X-rays (EDX) has been used to examine the nature of the phosphorus accumulated in sludges from seven activated sludge plants exhibiting enhanced phosphorus removal. Large phosphorus accumulations were located in identical structures in the sludges examined. The phosphorus was located in large electron-dense bodies, within large bacterial cells which were characteristically grouped in clusters. The calcium:phosphorus ratio of these electron-dense bodies precluded them from being any form of calcium phosphate precipitate. Quantitative analysis indicated that the electron-dense bodies contained in excess of 30% phosphorus. The results obtained are supportive of a biological mechanism of enhanced phosphorus uptake in activated sludge

  12. Effect of phosphorus stress on Microcystis aeruginosa growth and phosphorus uptake.

    Directory of Open Access Journals (Sweden)

    Sajeela Ghaffar

    Full Text Available This study was designed to advance understanding of phosphorus regulation of Microcystis aeruginosa growth, phosphorus uptake and storage in changing phosphorus (P conditions as would occur in lakes. We hypothesized that Microcystis growth and nutrient uptake would fit classic models by Monod, Droop, and Michaelis-Menten in these changing conditions. Microcystis grown in luxury nutrient concentrations was transferred to treatments with phosphorus concentrations ranging from 0-256 μg P∙L-1 and luxury nitrogen. Dissolved phosphorus concentration, cell phosphorus quota, P uptake rate and cell densities were measured at day 3 and 6. Results showed little relationship to predicted models. Microcystis growth was asymptotically related to P treatment from day 0-3, fitting Monod model well, but negatively related to P treatment and cell quota from day 3-6. From day 0-3, cell quota was negatively related to P treatments at <2 μg∙L-1, but increased slightly at higher P. Cell quota decreased greatly in low P treatments from day 3-6, which may have enabled high growths in low P treatments. P uptake was positively and linearly related to P treatment during both periods. Negative uptake rates and increases in measured culture phosphorus concentrations to 5 μg∙L-1 in the lowest P treatments indicated P leaked from cells into culture medium. This leakage during early stages of the experiment may have been sufficient to stimulate metabolism and use of intracellular P stores in low P treatments for rapid growth. Our study shows P regulation of Microcystis growth can be complex as a result of changing P concentrations, and this complexity may be important for modeling Microcystis for nutrient and ecosystem management.

  13. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  14. Sanctions for doping in sport

    Directory of Open Access Journals (Sweden)

    Mandarić Sanja

    2014-01-01

    Full Text Available Top-level sport imposes new and more demanding physical and psychological pressures, and the desire for competing, winning and selfassertion leads athletes into temptation to use prohibited substances in order to achieve the best possible results. Regardless of the fact that the adverse consequences of prohibited substances are well-known, prestige and the need to dominate sports arenas have led to their use in sports. Doping is one of the biggest issues in sport today, and the fight against it is a strategic objective on both global and national levels. World Anti-Doping Agency, the International Olympic Committee, international sports federations, national anti-doping agencies, national sports federations, as well as governments and their repressive apparatuses are all involved in the fight against doping in sport. This paper points to a different etymology and phenomenology of doping, the beginnings of doping in sport, sports doping scandals as well as the most important international instruments regulating this issue. Also, there is a special reference in this paper to the criminal and misdemeanor sanctions for doping in sport. In Serbia doping in sport is prohibited by the Law on Prevention of Doping in Sports which came into force in 2005 and which prescribes the measures and activities aimed at prevention of doping in sport. In this context, the law provides for the following three criminal offenses: use of doping substances, facilitating the use of doping substances, and unauthorized production and putting on traffic of doping substances. In addition, aiming at curbing the abuse of doping this law also provides for two violations. More frequent and repetitive doping scandals indicate that doping despite long-standing sanctions is still present in sports, which suggests that sanctions alone have not given satisfactory results so far.

  15. Performance of fertigation technique for phosphorus application in cotton

    Directory of Open Access Journals (Sweden)

    M. Aslam

    2009-05-01

    Full Text Available Low native soil phosphorus availability coupled with poor utilization of added phosphorus is one of the major constraints limiting the productivity of the crops. With a view of addressing this issue, field studies were conducted to compare the relative efficacy of broadcast and fertigation techniques for phosphorus application during 2005-2006 using cotton as a test crop. Two methods of phosphorus application i.e. broadcast and fertigation were evaluated using five levels of P2O5 (0, 30, 45, 60 and 75 kg P2O5 ha -1. Fertigation showed an edge over broadcast method at all levels of phosphorus application. The highest seed cotton yield was recorded with 75 kg P2O5 ha-1. Fertilizer phosphorus applied at the rate of 60 kg ha-1 through fertigation produced 3.4 tons ha-1 of seed cotton yield, which was statistically identical to 3.3 tons recorded with 75 kg ha-1 of broadcast phosphorus. Agronomic performance of phosphorus was influenced considerably by either method of fertilizer application. The seed cotton yield per kg of fertigation phosphorus was 48% higher than the corresponding broadcast application. The results of these studies showed that fertigation was the most efficient method of phosphorus application compared with the conventional broadcast application of fertilizers.

  16. Luminescence studies of rare earth doped dosimeters

    International Nuclear Information System (INIS)

    Karali, T.

    1999-10-01

    The main objective of this thesis has been to address the applications and fundamentals of thermoluminescence (TL) and to contribute to existing knowledge about TL mechanisms in materials which are applied as radiation dosimeters. This issue has been explored for a long time but the mechanisms lack completeness and certainty. TL, Radioluminescence (RL) and Radio-thermoluminescence (RLTL) measurements have been conducted on a high sensitivity TL spectrometer both at low (30-290 K) and high (25-400 deg. C) temperatures, and different heat treatments (furnace and laser) were conducted in order to study the possible impurity clustering which changes the TL spectra and efficiency of the dosimeters. Studies have been based on three different host structure, namely sulphate, borates and zircon. The spectra of calcium sulphate samples doped with Tm 3+ and Dy 3+ at different concentration were examined using TL, RL and RLTL. Similar procedures were applied to the borate samples. Modifications of the material by thermal treatments convert the state of dispersion of the rare earth ions between isolated, pair or defect clusters, which alter the dosimeter efficiency. In some cases, modified geometries are detectable by movement of the line emissions such as for quenched samples which are attributable to new microcrystal line phases. The study of co-doped samples showed unequivocal evidence of a glow peak displacement of the two dopants within a single sample. This result supports the new view that RE 3+ ions could form part of a complex defect acting as both charge trap and recombination centres. Pulsed laser heating with a UV laser changed the glow curve shape and lead to strong signals. The detailed mechanisms for this process are discussed. The RL and TL spectra of synthetic zircon crystals doped with different RE 3+ ions (Pr, Sm, Eu, Gd, Ho, Dy, Er, and Yb) and phosphorus are reported. Even though there is some intrinsic emission from the host lattice the major signals are

  17. [Research progress on phosphorus budgets and regulations in reservoirs].

    Science.gov (United States)

    Shen, Xiao; Li, Xu; Zhang, Wang-shou

    2014-12-01

    Phosphorus is an important limiting factor of water eutrophication. A clear understanding of its budget and regulated method is fundamental for reservoir ecological health. In order to pro- mote systematic research further and improve phosphorus regulation system, the budget balance of reservoir phosphorus and its influencing factors were concluded, as well as conventional regulation and control measures. In general, the main phosphorus sources of reservoirs include upstream input, overland runoff, industrial and domestic wastewater, aquaculture, atmospheric deposition and sediment release. Upstream input is the largest phosphorus source among them. The principal output path of phosphorus is the flood discharge, the emission load of which is mainly influenced by drainage patterns. In addition, biological harvest also can export a fraction of phosphorus. There are some factors affecting the reservoir phosphorus balance, including reservoirs' function, hydrological conditions, physical and chemical properties of water, etc. Therefore, the phosphorus budgets of different reservoirs vary greatly, according to different seasons and regions. In order to reduce the phosphorus loading in reservoirs, some methods are carried out, including constructed wetlands, prefix reservoir, sediment dredging, biomanipulation, etc. Different methods need to be chosen and combined according to different reservoirs' characteristics and water quality management goals. Thus, in the future research, it is reasonable to highlight reservoir ecological characteristics and proceed to a complete and systematic analysis of the inherent complexity of phosphorus budget and its impact factors for the reservoirs' management. Besides, the interaction between phosphorus budget and other nutrients in reservoirs also needs to be conducted. It is fundamental to reduce the reservoirs' phosphorus loading to establish a scientific and improved management system based on those researches.

  18. Visualizing alternative phosphorus scenarios for future food security

    Directory of Open Access Journals (Sweden)

    Tina-Simone Neset

    2016-10-01

    Full Text Available The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialogue on the technical, behavioral and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real-time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialogue to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1 the potential of full recovery of human excreta, (2 the challenge of a potential increase in non-food phosphorus demand, (3 the potential of a decreased animal product consumption, and (4 the potential decrease in phosphorus demand from increased efficiency

  19. Visualizing Alternative Phosphorus Scenarios for Future Food Security.

    Science.gov (United States)

    Neset, Tina-Simone; Cordell, Dana; Mohr, Steve; VanRiper, Froggi; White, Stuart

    2016-01-01

    The impact of global phosphorus scarcity on food security has increasingly been the focus of scientific studies over the past decade. However, systematic analyses of alternative futures for phosphorus supply and demand throughout the food system are still rare and provide limited inclusion of key stakeholders. Addressing global phosphorus scarcity requires an integrated approach exploring potential demand reduction as well as recycling opportunities. This implies recovering phosphorus from multiple sources, such as food waste, manure, and excreta, as well as exploring novel opportunities to reduce the long-term demand for phosphorus in food production such as changing diets. Presently, there is a lack of stakeholder and scientific consensus around priority measures. To therefore enable exploration of multiple pathways and facilitate a stakeholder dialog on the technical, behavioral, and institutional changes required to meet long-term future phosphorus demand, this paper introduces an interactive web-based tool, designed for visualizing global phosphorus scenarios in real time. The interactive global phosphorus scenario tool builds on several demand and supply side measures that can be selected and manipulated interactively by the user. It provides a platform to facilitate stakeholder dialog to plan for a soft landing and identify a suite of concrete priority options, such as investing in agricultural phosphorus use efficiency, or renewable fertilizers derived from phosphorus recovered from wastewater and food waste, to determine how phosphorus demand to meet future food security could be attained on a global scale in 2040 and 2070. This paper presents four example scenarios, including (1) the potential of full recovery of human excreta, (2) the challenge of a potential increase in non-food phosphorus demand, (3) the potential of decreased animal product consumption, and (4) the potential decrease in phosphorus demand from increased efficiency and yield gains in

  20. Phosphorus kinetics in ovine fed with different phosphorus sources, using the isotopic dilution technique

    International Nuclear Information System (INIS)

    Vitti, D.M.S.S.; Abdalla, A.L.; Meirelles, C.F.

    1992-01-01

    Phosphorus kinetics in fluids and tissues of sheep was studied. Sixteen castrated sheep were kept in metabolism cages, receiving a semipuried diet containing as phosphorus sources dicalcium phosphate (BIC), monoammonium phosphate (MAP), superphosphate (SPT) and Tapita phosphate (TAP) 200 μCi P-32 was intravenously injected in each sheep and blood and feces were collected for eight days. From the specific activities in feces and plasma the endogenous phosphorus and the absorption coefficient were calculated. plasma P-32 half-life was determined. Nine days after injection the animals were killed and liver, kidney and muscle and bone samples were collected. P-32 retention and specific activities in tissues were determined. Endogenous phosphorus and absorption coefficient values were 54.44 ± 15.31 mh/kg live weight and 0.60; 47.98 ± 12.44 and 0.56; 39.70 ± 7.29 and 0.49; 59.11 ± 17.12 and 0.58 respectively bor BIC, MAP, TAP and SPT. P-32 retention by tissues was 0.29 ± 0.09; 0.27 ± 0.06; 0.16 ± 0.04 and 0.08 ± 0.03 dose/g fresh matter, respectively for bone, liver, kidney and muscle. It was concluded that animals which received TAP showed differences in absorption, distribution and P-32 retention by fluids and tissues. Phosphorus availability was lower for this source. (author)

  1. Lamb shift measurement in hydrogenlike phosphorus

    International Nuclear Information System (INIS)

    Mueller, D.; Gassen, J.; Kremer, L.

    1988-01-01

    In hydrogenlike phosphorus ions the 2S 1/2 -2P 1/2 energy splitting (Lamb shift) has been found to be E exp (LS)=0.08343(29) eV using laser spectroscopy. This result is to be compared with the most recent theoretical value E th (LS)=0.08376(4) eV by Mohr and Johnson and Soff

  2. Phosphorus introduction mechanism in electrodeposited cobalt films

    International Nuclear Information System (INIS)

    Kravtchenko, Jean-Francois

    1973-01-01

    The cathodic reduction of hypophosphite, phosphite and phosphate ions was studied using chrono-potentiometry and voltammetry. Then cobalt was deposited at constant current from a bath containing one of these three compounds. The current, while giving an electrodeposition of cobalt, also enhances at the same time a chemical deposition of cobalt. It is shown that high coercive forces in cobalt films are much more related to this chemical deposition than to the simple fact that the films contain some phosphorus. (author) [fr

  3. Determination of phosphorus in metals by neutron activation and chemical separation as hydride

    International Nuclear Information System (INIS)

    Rouchaud, J.C.; Fedoroff, M.

    1993-01-01

    Phosphorous at trace levels alters the properties of metals and alloys. Its determination was investigated by radiochemical neutron activation analysis. Separation by solvent extraction or by evolution as P 0 showed to be neither selective nor quantitative in presence of a metallic matrix. Therefore, a new method of separation by reduction to phosphorous hydride followed by liquid scintillation counting was investigated. This method is quantitative in the case of non-radioactive iron doped with radioactive phosphorus. At present, the separation is not quantitative for irradiation iron samples, owing probably to hot atom or radiation effects. A detection limit of 0.002 μg is expected. (author) 10 refs.; 1 fig.; 3 tabs

  4. Hydrology, water quality, and response to changes in phosphorus loading of Minocqua and Kawaguesaga Lakes, Oneida County, Wisconsin, with special emphasis on effects of urbanization

    Science.gov (United States)

    Garn, Herbert S.; Robertson, Dale M.; Rose, William J.; Saad, David A.

    2010-01-01

    Minocqua and Kawaguesaga Lakes are 1,318- and 690-acre interconnected lakes in the popular recreation area of north-central Wisconsin. The lakes are the lower end of a complex chain of lakes in Oneida and Vilas Counties, Wis. There is concern that increased stormwater runoff from rapidly growing residential/commercial developments and impervious surfaces from the urbanized areas of the Town of Minocqua and Woodruff, as well as increased effluent from septic systems around their heavily developed shoreline has increased nutrient loading to the lakes. Maintaining the quality of the lakes to sustain the tourist-based economy of the towns and the area was a concern raised by the Minocqua/Kawaguesaga Lakes Protection Association. Following several small studies, a detailed study during 2006 and 2007 was done by the U.S. Geological Survey, in cooperation with the Minocqua/Kawaguesaga Lakes Protection Association through the Town of Minocqua to describe the hydrology and water quality of the lakes, quantify the sources of phosphorus including those associated with urban development and to better understand the present and future effects of phosphorus loading on the water quality of the lakes. The water quality of Minocqua and Kawaguesaga Lakes appears to have improved since 1963, when a new sewage-treatment plant was constructed and its discharge was bypassed around the lakes, resulting in a decrease in phosphorus loading to the lakes. Since the mid-1980s, the water quality of the lakes has changed little in response to fluctuations in phosphorus loading from the watershed. From 1986 to 2009, summer average concentrations of near-surface total phosphorus in the main East Basin of Minocqua Lake fluctuated from 0.009 mg/L to 0.027 mg/L but generally remained less than 0.022 mg/L, indicating that the lake is mesotrophic. Phosphorus concentrations from 1988 through 1996, however, were lower than the long-term average, possibly the result of an extended drought in the area

  5. Flow analysis techniques for phosphorus: an overview.

    Science.gov (United States)

    Estela, José Manuel; Cerdà, Víctor

    2005-04-15

    A bibliographical review on the implementation and the results obtained in the use of different flow analytical techniques for the determination of phosphorus is carried out. The sources, occurrence and importance of phosphorus together with several aspects regarding the analysis and terminology used in the determination of this element are briefly described. A classification as well as a brief description of the basis, advantages and disadvantages of the different existing flow techniques, namely; segmented flow analysis (SFA), flow injection analysis (FIA), sequential injection analysis (SIA), all injection analysis (AIA), batch injection analysis (BIA), multicommutated FIA (MCFIA), multisyringe FIA (MSFIA) and multipumped FIA (MPFIA) is also carried out. The most relevant manuscripts regarding the analysis of phosphorus by means of flow techniques are herein classified according to the detection instrumental technique used with the aim to facilitate their study and obtain an overall scope. Finally, the analytical characteristics of numerous flow-methods reported in the literature are provided in the form of a table and their applicability to samples with different matrixes, namely water samples (marine, river, estuarine, waste, industrial, drinking, etc.), soils leachates, plant leaves, toothpaste, detergents, foodstuffs (wine, orange juice, milk), biological samples, sugars, fertilizer, hydroponic solutions, soils extracts and cyanobacterial biofilms are tabulated.

  6. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  7. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David

    2016-09-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  8. Reconceptualising the Gender of Fitness Doping: Performing and Negotiating Masculinity through Drug-Use Practices

    Directory of Open Access Journals (Sweden)

    Jesper Andreasson

    2015-08-01

    Full Text Available This article analyses self-portrayals and gender constructions among Swedish male bodybuilders who are engaged in fitness doping. The empirical material comes from a larger ethnographic investigation into gym culture. The results show that there is a strong propensity to conform with particular gender fantasies that rests heavily on a binary understanding of gendered, doped bodies. However, this storyline does not apprehend the entire self-presentation of the analysed drug users. Negotiations and inclusive subversions of traditional gender norms are also expressed. For example, the narratives show how the use of performance-enhancing substances makes it possible for (heterosexual men to approach, touch and express feelings of desire towards other men and their bodies. As such, this practice can be viewed as a contestation of hegemonic gender values, in which masculinity and fitness doping are detached from a quite heterosexist understanding, and turned into a symbolic world of homoerotic pleasure.

  9. Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

    CERN Document Server

    Hong, N H; Sakai, J; Iwasaki, H

    2003-01-01

    Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

  10. Total phosphorus, phytate phosphorus contents and the correlation of phytates with amylose in selected edible beans in Sri Lanka

    Directory of Open Access Journals (Sweden)

    Keerthana Sivakumaran

    2018-02-01

    Full Text Available Phytate a major anti nutritional factors in legumes and it accounts for larger portion of the total phosphorus, while limiting the bioavailablity of certain divalent cations to the human body. Legumes of eleven varieties cultivated in Sri Lanka, Mung bean (MI5, MI6, Cowpea (Waruni, MICP1, Bombay, Dhawala, ANKCP1, Soybean (MISB1, Pb1 and Horse gram (ANKBlack, ANKBrown were analyzed for phosphorus content and phytate content. Total phosphorus content was quantified by dry ashing followed by spectrophotometrical measurement of the blue colour intensity of acid soluble phosphate with sodium molybdate in the presence of ascorbic acid while phytate phosphorus using anion exchange chromatographic technique followed by spectrometrical measurement of the digested organic phosphorus and amylose content by Simple Iodine-Colourimetric method. Where the least value for phosphorus was observed 275.04 ±1.44 mg.100g-1 in ANKBlack (Horse gram and the highest in MISB1 (Soyabean with 654.94 ±0.05 mg.100g-1. The phytate phosphorus content (which is a ratio of phyate to total phosphorus was highest in Dhawala (Cowpea. The phytate phosphorus (which is a ratio of phyate to total phosphorus was highest in Dhawala with 67.42% and least in Bombay (Cowpea with 24.87%. The amylose content of the legumes was least in Pb1 with 8.71 ±0.13 mg.100mg-1 and the highest in MI6 22.58 ±0.71 mg.100mg-1. The correlation between phyate and total phosphorus was significant (p <0.05 and positive (r = 0.62. Similarly the correlation coefficient for phytate phosphorus and total phosphorus was significant (p <0.05 and positive (r = 0.63. Amylose content of legumes was significantly correlated negatively (p <0.05 with the total phytates content (r = -0.82.

  11. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

    International Nuclear Information System (INIS)

    DelAlamo, J.A.

    1989-01-01

    A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

  12. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

  13. Precise Th/U-dating of small and heavily coated samples of deep sea corals

    Science.gov (United States)

    Lomitschka, Michael; Mangini, Augusto

    1999-07-01

    Marine carbonate skeletons like deep-sea corals are frequently coated with iron and manganese oxides/hydroxides which adsorb additional thorium and uranium out of the sea water. A new cleaning procedure has been developed to reduce this contamination. In this further cleaning step a solution of Na 2EDTA (Na 2H 2T B) and ascorbic acid is used which composition is optimised especially for samples of 20 mg of weight. It was first tested on aliquots of a reef-building coral which had been artificially contaminated with powdered ferromanganese nodule. Applied on heavily contaminated deep-sea corals (scleractinia), it reduced excess 230Th by another order of magnitude in addition to usual cleaning procedures. The measurement of at least three fractions of different contamination, together with an additional standard correction for contaminated carbonates results in Th/U-ages corrected for the authigenic component. A good agreement between Th/U- and 14C-ages can be achieved even for extremely coated corals.

  14. Heavily T2-weighted MR myelography vs CT myelography in spontaneous intracranial hypotension.

    Science.gov (United States)

    Wang, Y-F; Lirng, J-F; Fuh, J-L; Hseu, S-S; Wang, S-J

    2009-12-01

    To assess the diagnostic accuracy of heavily T2-weighted magnetic resonance myelography (MRM) in patients with spontaneous intracranial hypotension (SIH). Patients with SIH were recruited prospectively, and first underwent MRM and then computed tomographic myelography (CTM). The results of MRM were validated with the gold standard, CTM, focusing on 1) CSF leaks along the nerve roots, 2) epidural CSF collections, and 3) high-cervical (C1-3) retrospinal CSF collections. Comparisons of these 3 findings between the 2 studies were made by kappa statistics and agreement rates. Targeted epidural blood patches (EBPs) were placed at the levels of CSF leaks if supportive treatment failed. Nineteen patients (6 men and 13 women, mean age 37.9 +/- 8.6 years) with SIH completed the study. MRM did not differ from CTM in the detection rates of CSF leaks along the nerve roots (84% vs 74%, p = 0.23), high-cervical retrospinal CSF collections (32% vs 16%, p = 0.13), and epidural CSF collections (89% vs 79%, p = 0.20). MRM demonstrated more spinal levels of CSF leaks (2.2 +/- 1.7 vs 1.5 +/- 1.5, p = 0.011) and epidural collections (12.2 +/- 5.9 vs 7.1 +/- 5.8, p localizing CSF leaks for patients with spontaneous intracranial hypotension. This noninvasive technique may be an alternative to computed tomographic myelography before targeted epidural blood patches.

  15. Pollination with heavily irradiated pollen in Nicotiana: induced parthenogenesis and embryological study

    International Nuclear Information System (INIS)

    Musial, K.; Przywara, L.

    1999-01-01

    Nicotiana crosses were pollinated in situ and in vitro with heavily irradiated pollen (500, 700, 1000 Gy) to induce parthenogenesis and to study the development of embryo and endosperm. Haploids were obtained after in situ pollination only; however, parthenogenetic proembryos occurred also after in vitro pollination. It was demonstrated that ovule culture following pollination offers a better chance to produce haploids than undisturbed pollination does. Pollination with irradiated pollen (PwIP) stron gly decreased the number of endosperm cells and the size of embryo sacs, and it affected the development of embryos; no significant differences between applied irradiation doses were found. Ovules with endosperm only, embryo only, and with both embryo and endosperm were observed. The most frequent were the ovules with endosperm only, the rarest with embryo only. A small amount of storage products occurred in the endosperm cells. The diploid chromosome number counted in the endosperm produced after PwIP points to their origin without fertilization. An interesting phenomenon observed after PwIP was vigorous growth of endothelium. (author)

  16. Misdiagnosis of X-linked retinitis pigmentosa in a choroideremia patient with heavily pigmented fundi.

    Science.gov (United States)

    Nanda, A; Salvetti, A P; Martinez-Fernandez de la Camara, C; MacLaren, R E

    2018-06-01

    Inherited retinal diseases are thought to be the leading cause of sight loss in the working age population. Mutations found in the RPGR and CHM genes cause retinitis pigmentosa (RP) and choroideremia, respectively. In the first instance, an X-linked family history of visual field loss commonly raises the suspicion of one of these two genes. In choroideremia, the classic description of a white fundal reflex secondary to the widespread chorioretinal degeneration was made over a hundred years ago in Caucasians. But, it is not so obvious in heavily pigmented fundi. Hence, the clinical diagnosis of CHM in non-Caucasian patients may be challenging in the first stages of the disease. Here we report a case of a Southeast Asian gentleman who has a family history of X-linked retinal degeneration and was found to have a confirmed in-frame deletion of 12 DNA nucleotides in exon 15 of the RPGR gene. Later in life, however, his fundal appearance showed unusual areas of circular pigment hypertrophy and clumping. He was therefore tested for carrying a disease-causing mutation in the CHM gene and a null mutation was found. Since gene therapy trials are ongoing for both of these conditions, it has now become critically important to establish the correct genetic diagnosis in order to recruit suitable candidates. Moreover, this case demonstrates the necessity to remain vigilant in the interpretation of genetic results which are inconsistent with clinical features.

  17. Bioremediation of soil heavily contaminated with crude oil and its products: composition of the microbial consortium

    Directory of Open Access Journals (Sweden)

    JELENA S. MILIĆ

    2009-04-01

    Full Text Available Bioremediation, a process that utilizes the capability of microorganism to degrade toxic waste, is emerging as a promising technology for the treatment of soil and groundwater contamination. The technology is very effective in dealing with petroleum hydrocarbon contamination. The aim of this study was to examine the composition of the microbial consortium during the ex situ experiment of bioremediation of soil heavily contaminated with crude oil and its products from the Oil Refinery Pančevo, Serbia. After a 5.5-month experiment with biostimulation and bioventilation, the concentration of the total petroleum hydrocarbons (TPH had been reduced from 29.80 to 3.29 g/kg (89 %. In soil, the dominant microorganism population comprised Gram-positive bacteria from actinomycete-Nocardia group. The microorganisms which decompose hydrocarbons were the dominant microbial population at the end of the process, with a share of more than 80 % (range 107 CFU/g. On the basis of the results, it was concluded that a stable microbial community had been formed after initial fluctuations.

  18. Do the VOCs that evaporate from a heavily polluted river threaten the health of riparian residents?

    International Nuclear Information System (INIS)

    Juang, Der-Fong; Lee, Chao-Hsien; Chen, Wei-Chin; Yuan, Chung-Shin

    2010-01-01

    To understand the potential threat of volatile organic compounds (VOCs) to the health of residents living close to a heavily polluted river, this study investigated the species and the concentration of VOCs evaporating from a river and surveyed the health condition of the nearby residents. Air samples were taken seasonally at the upstream, midstream, and downstream water surfaces of the river, and at different locations at certain distances from the river. These samples were analyzed qualitatively and quantitatively through gas chromatography and electron capture detector (GC/ECD) for chlorinated organic compounds, and through gas chromatography and flame ionization detector (GC/FID) for ordinary hydrocarbons. The health data obtained from valid health questionnaires of 908 residents were analyzed through Statistical Package for Social Science (SPSS) software. Twenty-six species of VOCs were identified in the environment adjacent the river, many of which are carcinogenic or believed to be carcinogenic to humans. However, results of this study shows that the VOCs evaporating from the polluted river have not been definitively identified as a major factor of cancer in the residents. However, the risk of suffering from certain chronic diseases may increase in residents living less than 225 m away from the river due to the high levels of evaporated VOCs. Residents living less than 225 m away from the river and with nearby specific industries are 3.130 times more at risk of suffering from chronic diseases than those with no nearby specific industries.

  19. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  20. Quantifying the importance of diffuse minewater pollution in a historically heavily coal mined catchment

    International Nuclear Information System (INIS)

    Mayes, W.M.; Gozzard, E.; Potter, H.A.B.; Jarvis, A.P.

    2008-01-01

    There has been considerable progress in developing treatment systems for point sources of minewater pollution in recent years; however, there remains a knowledge gap in the characterisation and remediation of diffuse minewater sources. Data are presented from the River Gaunless catchment, a historically heavily coal mined catchment in the northeast of England. Instream iron (Fe) loadings were monitored alongside loadings arising from point minewater discharges over a 12-month period to assess the dynamic importance of diffuse sources of minewater pollution. In low flow, diffuse sources account for around 50% of instream loading, a proportion which increases to 98% in high flow conditions. The low flow sources appear to be dominated by direct discharge of contaminated groundwater to surface waters in lower reaches of the catchment. In high flow, resuspended Fe-rich sediments, which are both naturally occurring and derived from historic mining, become the dominant diffuse source of Fe in the water column. - Diffuse sources of minewater pollution significantly contribute to instream contaminant loadings under varying flow conditions

  1. Road Environments: Impact of Metals on Human Health in Heavily Congested Cities of Poland.

    Science.gov (United States)

    Adamiec, Ewa

    2017-06-29

    Road dust as a by-product of exhaust and non-exhaust emissions can be a major cause of systemic oxidative stress and multiple disorders. Substantial amounts of road dust are repeatedly resuspended, in particular at traffic lights and junctions where more braking is involved, causing potential threat to pedestrians, especially children. In order to determine the degree of contamination in the heavily traffic-congested cities of Poland, a total of 148 samples of road dust (RD), sludge from storm drains (SL) and roadside soil (RS) were collected. Sixteen metals were analysed using inductively coupled plasma mass spectrometry (ICP-MS), inductively coupled plasma atomic emission spectroscopy (ICP-OES) and atomic absorption spectroscopy (AAS) in all samples. Chemical evaluation followed by Principal Component Analysis (PCA) revealed that road environments have been severely contaminated with traffic-related elements. Concentration of copper in all road-environment samples is even higher, exceeding even up to 15 times its average concentrations established for the surrounding soils. Non-carcinogenic health risk assessment revealed that the hazard index (HI) for children in all road-environment samples exceeds the safe level of 1. Therefore, greater attention should be paid to potential health risks caused by the ingestion of traffic-related particles during outdoor activities.

  2. Comparative study and quantification of cementite decomposition in heavily drawn pearlitic steel wires

    Energy Technology Data Exchange (ETDEWEB)

    Lamontagne, A. [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Massardier, V., E-mail: veronique.massardier@insa-lyon.fr [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Kléber, X. [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Sauvage, X. [University of Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l’Université, 76801 Saint-Etienne du Rouvray (France); Mari, D. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, Station 3, Lausanne CH-1015 (Switzerland)

    2015-09-17

    Heavily cold-drawing was performed on a pearlitic steel wire and on an ultra-low carbon (ULC) steel wire in order to highlight and quantify the microstructural changes caused by this type of deformation. Both global techniques (thermoelectric power, electrical resistivity, internal fiction background) and local techniques (Atom Probe Tomography) were combined for this study. It was shown that two distinct stages have to be taken into account during the cold-drawing of pearlitic steels. The first stage (below a true strain of 1.5) was attributed mainly to the lamellar alignment, while the second stage (above a true strain of 1.5) was unambiguously interpreted as being due to a gradual enrichment of the carbon content of ferrite arising from the strain induced cementite decomposition. The carbon content in solid solution in ferrite was assessed as a function of the true strain. All the techniques showed that this carbon content exceeds the solubility limit of carbon in the ferrite above a true strain of 2.2. A correlation between the increase in the carbon content of ferrite and the increase in yield strength was also highlighted. Moreover, a scenario was proposed to explain the microstructural changes caused by drawing.

  3. Comparative study and quantification of cementite decomposition in heavily drawn pearlitic steel wires

    International Nuclear Information System (INIS)

    Lamontagne, A.; Massardier, V.; Kléber, X.; Sauvage, X.; Mari, D.

    2015-01-01

    Heavily cold-drawing was performed on a pearlitic steel wire and on an ultra-low carbon (ULC) steel wire in order to highlight and quantify the microstructural changes caused by this type of deformation. Both global techniques (thermoelectric power, electrical resistivity, internal fiction background) and local techniques (Atom Probe Tomography) were combined for this study. It was shown that two distinct stages have to be taken into account during the cold-drawing of pearlitic steels. The first stage (below a true strain of 1.5) was attributed mainly to the lamellar alignment, while the second stage (above a true strain of 1.5) was unambiguously interpreted as being due to a gradual enrichment of the carbon content of ferrite arising from the strain induced cementite decomposition. The carbon content in solid solution in ferrite was assessed as a function of the true strain. All the techniques showed that this carbon content exceeds the solubility limit of carbon in the ferrite above a true strain of 2.2. A correlation between the increase in the carbon content of ferrite and the increase in yield strength was also highlighted. Moreover, a scenario was proposed to explain the microstructural changes caused by drawing

  4. Atmospheric depositions around a heavily industrialized area in a seasonally dry tropical environment of India

    International Nuclear Information System (INIS)

    Singh, Raj Kumar; Agrawal, Madhoolika

    2005-01-01

    Clear and throughfall bulk depositions were collected in the downwind of a highly industrialized region in Sonbhadra district of India to estimate the influence of anthropogenic activities on chemical composition of depositions. Significant spatial and temporal variations in depositions of cations and anions were observed. Depositions were higher near the thermal power stations and coalmines as compared to distantly situated site. Seasonally summer samples showed maximum cation and anion depositions followed by winter and minimum in rainy season. The mean pH of the depositions indicates that rainfall in the area is alkaline. Among the anions, maximum deposition was recorded for SO 4 2- followed by NO 3 - and minimum for Cl - . Among the cations, Ca 2+ deposition was maximum followed by NH 4 + . Na + , K + and Mg 2+ deposition rates showed more or less similar values. The depositions of cations and anions as well as pH were higher in throughfall than clearfall samples. Results of the present study suggest that atmospheric depositions are strongly modified due to thermal power stations and coal mines in the area. - Atmospheric abundance of cations have neutralized the acidity of depositions around a heavily industrialized area in India

  5. Epibenthic diversity and productivity on a heavily trawled Barents Sea bank (Tromsøflaket

    Directory of Open Access Journals (Sweden)

    Monika Kędra

    2017-04-01

    Full Text Available Shallow Arctic banks have been observed to harbour rich communities of epifaunal organisms, but have not been well-studied with respect to composition or function due to sampling challenges. In order to determine how these banks function in the Barents Sea ecosystem, we used a combination of video and trawl/dredge sampling at several locations on a heavily trawled bank, Tromsøflaket – located at the southwestern entrance to the Barents Sea. We describe components of the benthic community, and calculate secondary production of dominant epifaunal organisms. Forty-six epibenthic taxa were identified, and sponges were a significant part of the surveyed benthic communities. There were differences in diversity and production among areas, mainly related to the intensity of trawling activities. Gamma was the most diverse and productive area, with highest species abundance and biomass. Trawled areas had considerably lower species numbers, and significant differences in epifaunal abundance and biomass were found between all trawled and untrawled areas. Trawling seems to have an impact on the sponge communities: mean individual poriferan biomass was higher in untrawled areas, and, although poriferans were observed in areas subjected to more intensive trawling, they were at least five times less frequent than in untrawled areas.

  6. Experiment and simulation on the thermal instability of a heavily deformed Cu-Fe composite

    International Nuclear Information System (INIS)

    Qu Lei; Wang Engang; Zuo Xiaowei; Zhang Lin; He Jicheng

    2011-01-01

    Research highlights: → Fe fibers undergo thermal instability at temperature above 600 deg. C. → Longitudinal boundary splitting is the dominant instability process. → Instability of cylindrical fibers is controlled by breakup, growth and coarsening. → Breakup times can be predicted by Rayleigh perturbation model accurately. → The increase of fiber diameters is due to the coarsening and growth. - Abstract: The thermal instability of the Fe fibers in the heavily deformed Cu-12.8 wt.%Fe composites is investigated experimentally and numerically. The fiber evolution is characterized by a field emission scanning electron microscopy (FESEM). The results show that the dominant instability of the Fe fibers is the longitudinal boundary splitting which is determined by the greater cross sectional aspect ratio (width/thickness, w/t) and the larger ratio of boundary to interfacial energy (γ B /γ S ). The longitudinal boundary splitting makes the ribbon-like Fe fibers evolve into a series of cylindrical fibers. Then the cylindrical Fe fibers undergo the instability process in terms of the breakup, growth and coarsening concurrently. The breakup times are accurately predicted by the Rayleigh perturbation model. The growth process primarily contributes to the higher increasing rate of the fiber radius during isothermal annealing at 700 deg. C than that calculated by the coarsening theory developed for cylindrical fibers, since the Cu-matrix of composites is highly supersaturated after casting/cold-working process.

  7. Alkylphenolic compounds and bisphenol A contamination within a heavily urbanized area: case study of Paris.

    Science.gov (United States)

    Cladière, Mathieu; Gasperi, Johnny; Lorgeoux, Catherine; Bonhomme, Céline; Rocher, Vincent; Tassin, Bruno

    2013-05-01

    This study evaluates the influence of a heavily urbanized area (Paris Metropolitan area), on receiving water contamination by both bisphenol A (BPA) and alkylphenol ethoxylate (APE) biodegradation product. The study began by investigating concentrations within urban sources. In addition to the more commonly studied wastewater treatment plant effluent, wet weather urban sources (including combined sewer overflows, urban runoff, and total atmospheric fallout) were considered. The initial results highlight a significant contamination of all urban sources (from a few nanograms per liter in atmospheric fallout to several micrograms per liter in the other sources) with clearly distinguishable distribution patterns. Secondly, concentration changes along the Seine River from upstream of the Paris Metropolitan area to downstream were investigated. While the concentrations of BPA and nonylphenoxy acetic acid (NP₁EC) increase substantially due to urban sources, the 4-nonylphenol concentrations remain homogeneous along the Seine. These results suggest a broad dissemination of 4-nonylphenol at the scale of the Seine River basin. Moreover, the relationship between pollutant concentrations and Seine River flow was assessed both upstream and downstream of the Paris conurbation. Consequently, a sharp decrease in dissolved NP1EC concentrations relative to Seine River flow underscores the influence of single-point urban pollution on Seine River contamination. Conversely, dissolved 4-nonylphenol concentrations serve to reinforce the hypothesis of its widespread presence at the Seine River basin scale.

  8. Radiation induced phosphorus segregation in austenitic and ferritic alloys

    International Nuclear Information System (INIS)

    Brimhall, J.L.; Baer, D.R.; Jones, R.H.

    1984-01-01

    The radiation induced surface segregation (RIS) of phosphorus in stainless steel attained a maximum at a dose of 0.8 dpa then decreased continually with dose. This decrease in the surface segregation of phosphorus at high dose levels has been attributed to removal of the phosphorus layer by ion sputtering. Phosphorus is not replenished since essentially all of the phosphorus within the irradiation zone has been segregated to the surface. Sputter removal can explain the previously reported absence of phosphorus segregation in ferritic alloys irradiated at high dosessup(1,2) (>1 dpa) since irradiation of ferritic alloys to low doses has shown measurable RIS. This sputtering phenomenon places an inherent limitation to the heavy ion irradiation technique for the study of surface segregation of impurity elements. The magnitude of the segregation in ferritics is still much less than in stainless steel which can be related to the low damage accumulation in these alloys. (orig.)

  9. Isotopic techniques to study phosphorus cycling in soils

    International Nuclear Information System (INIS)

    Manjaiah, K.M.; Sreenivasa Chari, M.; Sachdev, P.; Sachdev, M.S.

    2008-01-01

    A sound understanding of phosphorus cycling in soil system is essential in order to manage this system in a sustainable manner. Phosphorus transformations are characterized by physico-chemical (sorption-desorption) and biological processes . The transformation rates need to be taken into account while developing nutrient management strategies for economical and sustainable production. One of the important tools and the method gaining popularity for determining the gross transformation rates of nutrients in the soil is the isotopic dilution technique. The major processes in the soil-plant system which determine the distribution and bioavailability of phosphorus in various inorganic and organic soil components consist of: (1) the dissolution of soil mineral phosphates, (2) retention of phosphorus by inorganic soil constituents, (3) decomposition of organic phosphorus contained in plant, animal and microbial detritus and (4) Immobilization of phosphorus via the soil microbial biomass and plan uptake

  10. Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Wang, Yaling; Miao, Yanqin; Yang, Yongzhen, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); He, Yuheng; Liu, Xuguang, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2016-08-22

    Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

  11. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    Science.gov (United States)

    Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

    2015-06-01

    Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

  12. Metabolism of nonparticulate phosphorus in an acid bog lake

    International Nuclear Information System (INIS)

    Koenings, J.P.

    1977-01-01

    In North Gate Lake, an acid bog lake located on the northern Michigan-Wisconsin border, U.S.A., the algal nutrient inorganic phosphate (FRP) is not detectable by chemical means. Organic phosphorus (FUP) represents 100% of the detectable filterable phosphorus. The availability and cycling of this organic fraction are of considerable interest in regard to the primary productivity of this system. To clarify these relationships, the cycling of nonparticulate forms of phosphorus found in the epilimnion of this lake was studied

  13. Metabolism of nonparticulate phosphorus in an acid bog lake

    Energy Technology Data Exchange (ETDEWEB)

    Koenings, J. P.

    1977-01-01

    In North Gate Lake, an acid bog lake located on the northern Michigan-Wisconsin border, U.S.A., the algal nutrient inorganic phosphate (FRP) is not detectable by chemical means. Organic phosphorus (FUP) represents 100% of the detectable filterable phosphorus. The availability and cycling of this organic fraction are of considerable interest in regard to the primary productivity of this system. To clarify these relationships, the cycling of nonparticulate forms of phosphorus found in the epilimnion of this lake was studied.

  14. Availability for plants of phosphorus in some virgin peat samples

    Directory of Open Access Journals (Sweden)

    Armi Kaila

    1958-01-01

    Full Text Available The availability to plants of native peat phosphorus was studied by chemical methods and by a pot experiment in which three successive oat crops were grown with peat as the only source of phosphorus. The eight samples were collected from virgin peat lands. They were air-dried and ground. The samples were found to represent three different types of phosphorus condition: the first group contained relatively high amounts of inorganic phosphorus which was fairly easily available; the second group had a very high capacity to fix phosphorus which made its high quantity of inorganic phosphorus difficultly available; the third group was very poor in total and inorganic phosphorus but the latter was easily soluble and available to plants. On the basis of the capacity and intensity factors determined according to the method by Teräsvuori and also on the basis of inorganic phosphorus extractable by water fairly reliable predictions could be made of the mutual order of the samples as phosphorus supplyer to the plants in the pot experiment. In an incubation experiment at 27°C the amounts of organic phosphorus mineralized during the period of four months were in some of the samples quite marked, even 40 mg/l, and in most of the samples they corresponded to 5 to 15 per cent of the organic phosphorus. The amounts of phosphorus taken up by the oat crops under the favourable conditions of the pot experiment varied from 11 to 60 mg/l or from 20 to 120 kg/ha.

  15. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  16. Effect of supplemented fungal phytase on performance and phosphorus availability by phosphorus-depleted juvenile rainbow trout (Oncorhynchus mykiss), and on the magnitude and composition of phosphorus waste output

    DEFF Research Database (Denmark)

    Dalsgaard, Anne Johanne Tang; Schøn Ekmann, K.; Pedersen, Per Bovbjerg

    2009-01-01

    The effect of a supplemental fungal phytase on performance and phosphorus availability by juvenile rainbow trout fed diets with a high inclusion of plant based protein and on the magnitude and composition of the waste phosphorus production was tested in a 2 × 3 factorial design at a temperature....../suspended phosphorus waste output from fish fed the phytase supplemented diet containing 0.71% available phosphorus, suggesting that the phosphorus requirement was reached at this phosphorus level. Consistent with this, there was a substantial increase in the dissolved/suspended phosphorus waste output from fish fed...... the phytase supplemented diet containing 0.81% available phosphorus, suggesting that the phosphorus requirement was exceeded in this group. This study demonstrated that phytase supplementation will be advantageous to the fish and the environment if supplemented to low-phosphorus diets containing a large share...

  17. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  18. Contributions to total phosphorus intake: all sources considered.

    Science.gov (United States)

    Calvo, Mona S; Uribarri, Jaime

    2013-01-01

    High serum phosphorus is linked to poor health outcome and mortality in chronic kidney disease (CKD) patients before or after the initiation of dialysis. Dietary intake of phosphorus, a major determinant of serum phosphorus, seems to be systematically underestimated using the available software tools and generalized nutrient content databases. Several sources of dietary phosphorus including the addition of phosphorus ingredients in food processing, and phosphorus content of vitamin and mineral supplements and commonly used over-the-counter or prescription medications are not fully accounted for by the nutrient content databases and software programs in current clinical use or used in large population studies. In this review, we explore the many unknown sources of phosphorus in the food supply to identify all possible contributors to total phosphorus intake of Americans that have escaped inclusion in past intake estimates. Our goal is to help delineate areas for future interventions that will enable tighter control of dietary phosphorus intake, a critical factor to maintaining health and quality of life in CKD and dialysis patients. © 2012 Wiley Periodicals, Inc.

  19. Evaluation of added phosphorus in six volcanic ash soils

    International Nuclear Information System (INIS)

    Pino N, I.; Casas G, L.; Urbinsa P, M.C.

    1984-01-01

    The behaviour of added phosphorus in six volcanic ash soils (Andepts) was studied. Two phosphate retention solution were used; one of them labeled with 32 P carrier free. The phosphate retention solution (25 ml) was added to 5 gr of air dry soil. The remainder phosphorus in solution was measured through colorimetry and liquid scintillation. Over 85% phosphorus retention was measured in five soils. A phosphate retention solution labeled with 32 P carrier free proved to be efficient for the determination of phosphorus retention rates in the volcanic ash soils studied. (Author)

  20. A new model of anomalous phosphorus diffusion in silicon

    International Nuclear Information System (INIS)

    Budil, M.; Poetzl, H.; Stingeder, G.; Grasserbauer, M.

    1989-01-01

    A model is presented to describe the 'kink and tail' diffusion of phosphorus. The diffusion behaviour of phosphorus is expplained by the motion of phosphorus-interstitial and phosphorus-vacancy pairs in different charge states. The model yields the enhancement of diffusion in the tail region depending on surface concentration. Furthermore it yields the same selfdiffusion coefficient for interstitials as the gold diffusion experiments. A transformation of the diffusion equation was found to reduce the number of simulation equations. (author) 7 refs., 5 figs

  1. Relative efficiency of different methods of phosphorus (32P) application on fertilizer phosphorus uptake by maize (zea may L.)

    International Nuclear Information System (INIS)

    Chaudhary, M.L.; Gupta, A.P.

    1975-01-01

    A green house study was conducted for comparing four methods of phosphorus application (broad cast, below the seed, one side and both sides of the seeds) at the rate of 60 ppm in sierozem soil of H issar (Haryana). Maize crop was planted in 50 cm. bottomless bitumin drums for 70 days i.e. upto tasseling stage. The plant samples were collected at jointing and tasseling stages of plant growth. The results revealed that the highest dry matter yield, total and fertilizer phosphorus uptake was observed when the phosphorus was applied below the seed, followed by both side application of phosphorus. The least yield, total and fertilizer phosphorus uptake were recorded when the phosphorus was broadcast at the time of sowing. (author)

  2. Effect of phytase supplementation on apparent phosphorus digestibility and phosphorus output in broiler chicks fed low-phosphorus diets

    Directory of Open Access Journals (Sweden)

    Xian-Ren Jiang

    2015-04-01

    Full Text Available This study was conducted to evaluate the effect of supplemental phytase in broiler chicks fed different low levels of total phosphorus (P on the apparent phosphorus digestibility (APD and phosphorus output (PO in the faeces and ileal digesta. After fed a standard broiler starter diet from day 0 to 14 post-hatch, a total of 144 male broiler chicks were allocated to 6 groups for a 7-d experiment with a 2 × 3 factorial design comparing phytase (supplemented without (CTR or with 400 FTU/kg phytase (PHY and total P levels (2.0, 2.5 and 3.0 g/kg. The faecal samples were collected from day 17 to 21 post-hatch. At 22 days of age, all the chicks were slaughtered and collected the ileal digesta. Phytase supplementation significantly (P < 0.01 increased APD and decreased PO in the faeces and ileal digesta in comparison with the CTR group. In addition, PO in the faeces expressed as g/kg DM diets and faeces (Diet × P level, P = 0.047 and < 0.01, respectively as well as PO in the ileal digesta expressed as g/kg DM digesta (Diet × P level, P = 0.04 were affected by diet and P level, which were due to the significant reduction (P < 0.01 by PHY supplementation to the diets with 3.0 g/kg total P. The results evidenced that supplemental phytase improved the APD and PO when chicks was fed 3.0 g/kg total P diet, while lower total P levels may limit exogenous phytase efficacy.

  3. NuSTAR observations of heavily obscured quasars at z ∼ 0.5

    Energy Technology Data Exchange (ETDEWEB)

    Lansbury, G. B.; Alexander, D. M.; Moro, A. Del; Gandhi, P.; Aird, J. [Department of Physics, University of Durham, South Road, Durham DH1 3LE (United Kingdom); Assef, R. J. [Núcleo de Astronomía de la Facultad de Ingeniería, Universidad Diego Portales, Av. Ejército Libertador 441, Santiago (Chile); Stern, D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Mail Stop 169-221, Pasadena, CA 91109 (United States); Ballantyne, D. R. [Center for Relativistic Astrophysics, School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Baloković, M.; Grefenstette, B. W.; Harrison, F. A. [Cahill Center for Astrophysics, 1216 East California Boulevard, California Institute of Technology, Pasadena, CA 91125 (United States); Bauer, F. E. [Instituto de Astrofísica, Facultad de Física, Pontificia Universidad Catlica de Chile, Casilla 306, Santiago 22 (Chile); Boggs, S. E. [Space Sciences Laboratory, University of California, Berkeley, CA 94720 (United States); Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, The Pennsylvania State University, University Park, PA 16802 (United States); Christensen, F. E.; Craig, W. W. [DTU Space-National Space Institute, Technical University of Denmark, Elektrovej 327, DK-2800 Lyngby (Denmark); Elvis, M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Hailey, C. J. [Columbia Astrophysics Laboratory, 550 W 120th Street, Columbia University, NY 10027 (United States); Hickox, R. C. [Department of Physics and Astronomy, Dartmouth College, 6127 Wilder Laboratory, Hanover, NH 03755 (United States); Koss, M., E-mail: g.b.lansbury@durham.ac.uk [Institute for Astronomy, Department of Physics, ETH Zurich, Wolfgang-Pauli-Strasse 27, CH-8093 Zurich (Switzerland); and others

    2014-04-10

    We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength diagnostics, their X-ray absorbing column densities (N {sub H}) are poorly known. In this analysis, (1) we study X-ray emission at >10 keV, where X-rays from the central black hole are relatively unabsorbed, in order to better constrain N {sub H}. (2) We further characterize the physical properties of the sources through broad-band near-UV to mid-IR spectral energy distribution analyses. One of the quasars is detected with NuSTAR at >8 keV with a no-source probability of <0.1%, and its X-ray band ratio suggests near Compton-thick absorption with N {sub H} ≳ 5 × 10{sup 23} cm{sup –2}. The other two quasars are undetected, and have low X-ray to mid-IR luminosity ratios in both the low-energy (2-10 keV) and high-energy (10-40 keV) X-ray regimes that are consistent with extreme, Compton-thick absorption (N {sub H} ≳ 10{sup 24} cm{sup –2}). We find that for quasars at z ∼ 0.5, NuSTAR provides a significant improvement compared to lower energy (<10 keV) Chandra and XMM-Newton observations alone, as higher column densities can now be directly constrained.

  4. Oral etoposide in heavily pre-treated metastatic breast cancer: A retrospective series.

    Science.gov (United States)

    Giannone, G; Milani, A; Ghisoni, E; Genta, S; Mittica, G; Montemurro, F; Valabrega, G

    2018-04-01

    Patients with metastatic breast cancer (MBC) can derive clinical benefit from several subsequent lines of chemotherapy. However, in heavily pre-treated patients, agents with clinical activity, a favourable side effects profile and a convenient administration modality are preferred. We retrospectively analyzed 110 patients with previously treated MBC, who received oral etoposide at the dose of 50 mg/day for 20 days in 28 days cycles, between 2003 and 2017. Because this was not a prospectively planned study, to describe the clinical performance of oral etoposide we adopted the approach suggested by Dzimitrowicz and colleagues (J Clin Oncol. 2016; 34:3511-17); Tumour Response (TR) was defined as the proportion of physician-reported clinical or imaging response; Prolonged Duration on Therapy (PDT) as the proportion of non-progressing patients whose treatment lasted more than 6 months. Furthermore, we evaluated median duration on therapy (TD) and median Overall Survival (OS) by the Kaplan Meier method. The median number of previous chemotherapy lines was 5 (range 2-8). TR, PDT, median TD and median OS were 6.4%, 18.2% 4 (range 3.5-4.5) and 10.6 (range 8.4-12.8) months respectively. Interestingly, etoposide activity was unrelated to the number of previous lines and type of metastatic involvement. Oral etoposide was well tolerated with only two patients discontinuing therapy due to toxicity. In this large, single Institution, real practice analysis oral etoposide is a valuable and safe option for pre-treated metastatic breast cancer patients and might be considered in patients failing other approaches, but still suitable for chemotherapy. Copyright © 2018 Elsevier Ltd. All rights reserved.

  5. Risk ranking of environmental contaminants in Xiaoqing River, a heavily polluted river along urbanizing Bohai Rim.

    Science.gov (United States)

    Li, Qifeng; Zhang, Yueqing; Lu, Yonglong; Wang, Pei; Suriyanarayanan, Sarvajayakesavalu; Meng, Jing; Zhou, Yunqiao; Liang, Ruoyu; Khan, Kifayatullah

    2018-08-01

    Xiaoqing River, located in the Laizhou Bay of Bohai Sea, is heavily polluted by various pollutants including heavy metals, polycyclic aromatic hydrocarbons (PAHs), hexachlorocyclohexanes (HCHs), perfluoroalkyl acids (PFAAs), bisphenol A (BPA) and pharmaceutical and personal care products (PPCPs). The aim of this study is to identify the relative risks of such contaminants that currently affect the coastal ecosystem. The median and highest concentrations of PFAAs and perfluorooctanoic acid (PFOA) were 3.23 μg L -1 and 325.28 μg L -1 , and 0.173 μg L -1 and 276.24 μg L -1 , respectively, which were ranked higher when compared with global level concentrations. To assess the relative risk levels of perfluorooctane sulfonic acid (PFOS), PFOA, and other contaminants in the upstream and downstream of the Xiaoqing River and in its tributary, a risk ranking analysis was carried out. Copper (Cu), Zinc (Zn), and arsenic (As) showed the highest risk values in the Xiaoqing River, while the relative risks of PFOA and PFOS differed across the various segments. The risk ranking of PFOA was the second highest in the tributary and the fourth highest in the downstream portion of the river, whereas the PFOS was found to be the lowest in all the segments. Heavy metals and PFOA are the main chemicals that should be controlled in the Xiaoqing River. The results of the present study provide a better understanding of the potential ecological risks of the contaminants in Xiaoqing River. Copyright © 2018 Elsevier Ltd. All rights reserved.

  6. Ethylene: a regulator of root architectural responses to soil phosphorus availability

    NARCIS (Netherlands)

    Borch, K.; Bouma, T.J.; Lynch, J.P.; Brown, K.M.

    1999-01-01

    The involvement of ethylene in root architectural responses to phosphorus availability was investigated in common bean (Phaseolus vulgaris L,) plants grown with sufficient and deficient phosphorus. Although phosphorus deficiency reduced root mass and lateral root number, main root length was

  7. Co-doping as a tool for tuning the optical properties of singlewalled carbon nanotubes: A first principles study

    Science.gov (United States)

    Sharma, Deepa; Jaggi, Neena

    2017-07-01

    This paper presents a first principles study on the effect of co-doping on various optical spectra of a zigzag single-walled carbon nanotube (SWCNT). Optical spectra of a pristine SWCNT, SWCNT co-doped with Aluminum (Al) & Phosphorus (P) and another one co-doped with Al, P and Nitrogen (N) have been calculated using density functional theory (DFT).The theory has been implemented using the Cambridge sequential total energy package (CASTEP) code available as a userfriendly module with the software 'Material Studio'. Polarized and unpolarized light as well as light through polycrystalline media have been considered. The dependence of various spectra on the status of incident light presents a clear evidence of anisotropicity in the optical properties. Analysis of the simulated spectra involves calculation and comparison of different optical properties like dielectric function, reflectivity, refractive index, conductivity and loss function for the pristine and co-doped SWCNTs. Noticeable variations are observed in the optical properties on simultaneously doping the SWCNT with Al and P and then further introducing N atom into the structure so that it can be concluded that co-doping (simultaneous doping with different combinations of dopants) can be evolved as a novel and effective tool for tailoring the optical properties of SWCNTs as per the requirements while designing an optical device. It will prove to be highly significant for effective designing of SWCNT based sensitive optical devices for a variety of technological applications.

  8. Effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus application rates

    Directory of Open Access Journals (Sweden)

    S. Fatih Ergin

    2016-10-01

    Full Text Available In this study, effect of mycorrhiza on growth criteria and phosphorus nutrition of lettuce (Lactuca sativa L. under different phosphorus fertilization rates were investigated. Phosphorus were added into growing media as 0, 50, 100 and 200 mg P2O5/kg with and without mycorrhiza applications. Phosphorus applications significantly increased yield criteria of lettuce according to the control treatment statistically. Mycorrhiza application also significantly increased plant diameter, plant dry weight and phosphor uptake by plant. The highest phosphorus uptakes by plants were determined in 200 mg P2O5/kg treatments as 88.8 mg P/pot with mycorrhiza and 83.1 mg P/pot without mycorrhiza application. In the control at 0 doses of phosphorus with mycorrhiza treatment, phosphorus uptake (69.9 mg P/pot, edible weight (84.36 g, dry weight (8.64 g and leaf number (28 of lettuce were higher than that (47.7 mg P/pot, 59.33 g, 6.75 g and 20, respectively in the control without mycorrhiza application. It was determined that mycorrhiza had positive effect on growth criteria and phosphorus nutrition by lettuce plant, and this effect decreased at higher phosphorus application rates.

  9. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  10. Direct observation of interlayer Josephson vortices in heavily Pb-doped Bi2Sr2CaCu2Oy by scanning superconducting quantum interference device microscopy

    International Nuclear Information System (INIS)

    Kasai, Junpei; Hasegawa, Tetsuya; Okazaki, Noriaki; Koinuma, Hideomi; Nakayama, Yuri; Shimoyama, Jun-ichi; Kishio, Kohji; Motohashi, Teruki; Matsumoto, Yuji

    2006-01-01

    Josephson vortices trapped in cross-sectional edge surfaces of Pb 0.6 Bi 1.4 Sr 2 CaCu 2 O y has been directly observed by using a scanning superconducting quantum interference device (SQUID) microscope. The magnetic field distribution B z around each vortex is substantially anisotropic, compared with the usual vortex in the ab-plane, and is extended over 100 μm toward the in-plane direction. By fitting a theoretical B z function to experimental ones, c-axis penetration depth λ c was estimated to be 11.2 ±0.7 μm, which is in good agreement with the literature value, 12.6 μm, obtained from the Josephson plasma edge frequency. (author)

  11. Compositional trends in low-temperature photoluminescence of heavily Er-doped GeS(2)-Ga(2)S(3) glasses

    Czech Academy of Sciences Publication Activity Database

    Ivanova, Z.; Zavadil, Jiří; Rao, K. S. R. K.

    2011-01-01

    Roč. 357, 11-13 (2011), s. 2443-2446 ISSN 0022-3093 R&D Projects: GA ČR GA104/08/0734 Institutional research plan: CEZ:AV0Z20670512 Keywords : Glasses * Fluorescence * Rare earths Subject RIV: CA - Inorganic Chemistry Impact factor: 1.537, year: 2011

  12. A study of the disorder in heavily doped Ba1-xLaxF2+x by neutron scattering, ionic conductivity and specific heat measurements

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1986-01-01

    The ionic disorder in single crystals of the fluorite-type solid solutions Ba1-xLaxF2+x (with x=0.209 and x=0.492) has been studied in the temperature range from room temperature to 800 degrees C by diffuse neutron scattering, ionic conductivity, and specific heat measurements. From the diffuse...... neutron scattering it was found that the disorder was dominated by 222 clusters, which at low temperatures (T>10-10s), in agreement with NMB results which suggest a jump frequency below 75 MHz. The temperatures at which the steepest slopes are found in the loss of correlations and in the conductivity...... coincide at approximately 650 degrees C. At this temperature no clear anomaly is observed in the specific heat. Based on these findings the authors propose a conduction mechanisms where F- ions are moving through the lattice by means of rearrangements of the 222 clusters....

  13. Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Ponseca jr., C.S.; Němec, Hynek; Wallentin, J.; Anttu, N.; Beech, J.P.; Iqbal, A.; Borgström, M.; Pistol, M.-E.; Samuelson, L.; Yartsev, A.

    2014-01-01

    Roč. 90, č. 8 (2014), "085405-1"-"085405-7" ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101218 Institutional support: RVO:68378271 Keywords : time-resolved terahertz spectrocopy * semiconductor nanostructures * mobility * effective medium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  14. Evaluation of the use of polymer modified bitumen in the production of high modulus asphalt for heavily-trafficked roads

    CSIR Research Space (South Africa)

    Komba, Julius J

    2015-05-01

    Full Text Available Enrobé à Module Élevé (EME) technology, a High Modulus Asphalt (HiMA), has been introduced to South Africa to provide an optimum solution for the design and construction of heavily trafficked roads. Implementation of EME technology in South Africa...

  15. The nature of the torus in the heavily obscured AGN Markarian 3: an X-ray study

    DEFF Research Database (Denmark)

    Guainazzi, M.; Risaliti, G.; Awaki, H.

    2016-01-01

    In this paper, we report the results of an X-ray monitoring campaign on the heavily obscured Seyfert galaxy, Markarian 3, carried out between the fall of 2014 and the spring of 2015 with NuSTAR, Suzaku and XMM–Newton. The hard X-ray spectrum of Markarian 3 is variable on all the time-scales probe...

  16. An accurate measurement of the baryonic Tully-Fisher relation with heavily gas-dominated ALFALFA galaxies

    NARCIS (Netherlands)

    Papastergis, E.; Adams, E. A. K.; van der Hulst, J. M.

    2016-01-01

    We use a sample of 97 galaxies selected from the Arecibo legacy fast ALFA (ALFALFA) 21 cm survey to make an accurate measurement of the baryonic Tully-Fisher relation (BTFR). These galaxies are specifically selected to be heavily gas-dominated (Mgas/M∗ ≳ 2.7) and to be oriented edge-on. The former

  17. Using a phosphorus loss model to evaluate the Kentucky phosphorus index

    Science.gov (United States)

    U.S. Department of Agriculture’s Natural Resource Conservation Service (USDA-NRCS) has recently revised its 590 Nutrient Management Conservation Standard. As part of this revision, USDA-NRCS is requiring states to test the accuracy of their phosphorus (P) index using either measured P loss data or s...

  18. Phosphorus solubility in an acid forest soil as influenced by form of applied phosphorus and liming

    International Nuclear Information System (INIS)

    Fransson, Ann-Mari; Bergkvist, Bo; Tyler, Germund

    1999-01-01

    Sedimentary phosphorus, superphosphate, and wood-ash, as well as either sedimentary phosphorus. superphosphate or ash combined with lime, were distributed in selected plots in an 80-yr-old Norway spruce forest [Picea abies (L.) Karst]. After 2 yrs, the sedimentary phosphorus had increased the oxalate/oxalic acid-extractable P in the O-horizon, and the superphosphate had increased the oxalate/oxalic acid-extractable P in the E-horizon. At first, the percolation water from the superphosphate treatment showed high P concentrations. It soon returned to control levels, however. The percolation water from the sedimentary phosphorus treatment gradually showed increased phosphate concentrations. The wood-ash increased neither the amount of extractable P nor the P concentration in the percolation water. The oxalate/oxalic acid-extractable P from the sedimentary P treatment was reduced by liming. The P concentration in the percolation water also tended to be reduced. This was perhaps due to formation of Ca phosphates in the vicinity of the lime particles. In addition, if the solubility rate was similar to the uptake rate, it could account for the decreased P concentration

  19. Transformation of apatite phosphorus and non-apatite inorganic phosphorus during incineration of sewage sludge.

    Science.gov (United States)

    Li, Rundong; Zhang, Ziheng; Li, Yanlong; Teng, Wenchao; Wang, Weiyun; Yang, Tianhua

    2015-12-01

    The recovery of phosphorus from incinerated sewage sludge ash (SSA) is assumed to be economical. Transformation from non-apatite inorganic phosphorus (NAIP) to apatite phosphorus (AP), which has a higher bioavailability and more extensive industrial applications, was studied at 750-950°C by sewage sludge incineration and model compound incineration with a calcium oxide (CaO) additive. Thermogravimetric differential scanning calorimetry analysis and X-ray diffraction measurements were used to analyze the reactions between NAIP with CaO and crystallized phases in SSA. High temperatures stimulated the volatilization of NAIP instead of AP. Sewage sludge incineration with CaO transformed NAIP into AP, and the percentage of AP from the total phosphorus reached 99% at 950°C. Aluminum phosphate reacted with CaO, forming Ca2P2O7 and Ca3(PO4)2 at 750-950°C. Reactions between iron phosphate and CaO occurred at lower temperatures, forming Ca(PO3)2 before reaching 850°C. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. Selection of phosphorus solubilizing bacteria with biocontrol potential for growth in phosphorus rich animal bone charcoal

    NARCIS (Netherlands)

    Postma, J.; Nijhuis, E.H.; Sommeus, E.

    2010-01-01

    Bacteria with the ability to solubilize phosphorus (P) and to improve plant health were selected and tested for growth and survival in P-rich animal bone charcoal (ABC). ABC is suggested to be suitable as a carrier for biocontrol agents, offering them a protected niche as well as delivering