WorldWideScience

Sample records for heavily mg doped

  1. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  2. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  3. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  4. Heavily nitrogen doped, graphene supercapacitor from silk cocoon

    International Nuclear Information System (INIS)

    Sahu, Vikrant; Grover, Sonia; Tulachan, Brindan; Sharma, Meenakshi; Srivastava, Gaurav; Roy, Manas; Saxena, Manav; Sethy, Niroj; Bhargava, Kalpana; Philip, Deepu; Kim, Hansung; Singh, Gurmeet; Singh, Sushil Kumar; Das, Mainak; Sharma, Raj Kishore

    2015-01-01

    Doping of graphene with nitrogen is of much interest, since it improves the overall conductivity and supercapacitive properties. Besides conductivity, nitrogen doping also enhances the pseudo-capacitance due to fast and reversible surface redox processes. In this work, we have developed a cheap and easy process for synthesizing heavily nitrogen doped graphene (15% nitrogen) from non-mulberry silk cocoon membrane (Tassar, Antheraea mylitta) by pyrolyzing the cocoon at 400 °C in argon atmosphere. Further we have investigated the performance of this heavily ‘nitrogen doped graphene’ (NDG) in a supercapacitor device. Our results suggest that NDG obtained from cocoon has improved supercapacitor performance. The improved performance is due to the high electronegativity of nitrogen that forms dipoles on the graphene surface. These dipoles consequently enhance the tendency of graphene to attract charged species to its surface. This is a green and clean synthesis approach for developing electronic materials for energy applications

  5. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  6. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  7. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Near-infrared free carrier absorption in heavily doped silicon

    International Nuclear Information System (INIS)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-01-01

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

  9. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  10. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  11. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  12. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  13. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  14. Surface photovoltage in heavily doped GaN:Si,Zn

    Science.gov (United States)

    McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

    2014-02-01

    In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

  15. Electron transport in heavily doped GdN

    Science.gov (United States)

    Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

    2018-01-01

    We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

  16. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  17. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  18. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  19. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  20. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  1. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  2. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  3. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  4. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  5. Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-08-01

    We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

  6. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  7. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

    1994-01-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

  8. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

    1994-11-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

  9. One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

    2008-03-21

    We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

  10. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  11. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

  12. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  13. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  14. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  15. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  16. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  17. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Sui Yan-Ping; Yu Guang-Hui

    2011-01-01

    We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  19. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  20. Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

    Directory of Open Access Journals (Sweden)

    Shiraz Labib

    2013-12-01

    Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

  1. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  2. Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-02-01

    We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

  3. The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

    International Nuclear Information System (INIS)

    Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

    1992-01-01

    The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

  4. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

    2009-01-01

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

  5. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  6. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  7. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  8. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  9. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  10. doped LiMgPO4 phosphor

    Indian Academy of Sciences (India)

    attention because of their remarkable luminescence proper- ties and .... Figure 1. (a) X-ray diffraction patterns of LiMgPO4:Tb3+ phosphor and (b) standard data. ICDD file. .... ground signal which affects the signal to noise ratio [17]. MDD was ...

  11. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  12. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  13. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  14. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  15. Electronic transport in heavily doped Ag/n-Si composite films

    Directory of Open Access Journals (Sweden)

    Clayton W. Bates Jr.

    2013-10-01

    Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

  16. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  17. Stabilization of Reactive MgO Surfaces by Ni Doping

    Science.gov (United States)

    Mazheika, Aliaksei; Levchenko, Sergey V.

    Ni-MgO solid solutions are promising materials for catalytic reduction of CO2 and dry reforming of CH4. To explain the catalytic activity, an ab initio study of Ni-substitutional defects in MgO (NiMg) has been performed. At first, the validation of the theory level was done. We compared results of CCSD(T) embedded-cluster calculations of NiMg formation energies and adsorption energies of CO, CO2 and H2 on them to the HSE(α) hybrid DFT functional with the fraction of the exact exchange α varied between 0 and 1. HSE(0.3) was found to be the best compromise in this study. Our periodic HSE(0.3) calculations show that NiMg defects are most stable at corner sites, followed by steps, and are least stable at (001) terraces. Thus, Ni-doping stabilizes stepped MgO surfaces. The dissociative adsorption of H2 on the terrace is found to be endothermic (+ 1 . 1 eV), whereas on (110) surface with NiMg it is highly exothermic (- 1 . 6 eV). Adsorbed CO2 is also significantly stabilized (- 0 . 6 vs. - 2 . 2 eV). These findings explain recent microcalorimetry measurements of H2 and CO2 adsorption at doped Ni-MgO samples. partially supported by UniCat (Deutsche Forschungsgemeinschaft).

  18. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  19. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  20. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  1. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

    International Nuclear Information System (INIS)

    Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2017-01-01

    The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

  2. Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

    2011-01-01

    Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

  3. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  4. Substrate and Mg doping effects in GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Perumal Kannappan

    2017-10-01

    Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

  5. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  6. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

    International Nuclear Information System (INIS)

    Norris, C.B.; Barnes, C.E.

    1980-01-01

    The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

  7. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  8. Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

    International Nuclear Information System (INIS)

    Jerome, D.

    1965-10-01

    The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

  9. Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

    2008-01-01

    The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

  10. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  11. Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

    KAUST Repository

    Lin, S. S.

    2009-11-11

    We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

  12. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  13. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  14. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    International Nuclear Information System (INIS)

    Sasani, Alireza; Baktash, Ardeshir; Mirabbaszadeh, Kavoos; Khoshnevisan, Bahram

    2016-01-01

    Highlights: • Formation energy of Mg and Mg-Nb co-doped TiO_2 anatase surface (101) is studied. • Effect of Mg defect to the TiO_2 anatase (101) surface and bond length distribution of the surface is studied and it is shown that Mg defects tend to stay far from each other. • Effect of Mg and Nb to the bond length distribution of the surface studied and it is shown that these defects tend to stay close to each other. • Effects of Mg and Mg-Nb defects on DSSCs using TiO_2 anatase hosting these defects are studied. - Abstract: In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO_2 anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO_2 surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase J_S_C of the surface while slightly decreasing V_O_C compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  15. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    Energy Technology Data Exchange (ETDEWEB)

    Sasani, Alireza [Department of Science, Karaj Islamic Azad University, Karaj, Alborz, P.O. Box 31485-313 (Iran, Islamic Republic of); Baktash, Ardeshir [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of); Mirabbaszadeh, Kavoos, E-mail: mirabbas@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, Tehran, P. O. Box 15875-4413 (Iran, Islamic Republic of); Khoshnevisan, Bahram [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of)

    2016-10-30

    Highlights: • Formation energy of Mg and Mg-Nb co-doped TiO{sub 2} anatase surface (101) is studied. • Effect of Mg defect to the TiO{sub 2} anatase (101) surface and bond length distribution of the surface is studied and it is shown that Mg defects tend to stay far from each other. • Effect of Mg and Nb to the bond length distribution of the surface studied and it is shown that these defects tend to stay close to each other. • Effects of Mg and Mg-Nb defects on DSSCs using TiO{sub 2} anatase hosting these defects are studied. - Abstract: In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO{sub 2} anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO{sub 2} surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase J{sub SC} of the surface while slightly decreasing V{sub OC} compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  16. Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

    Science.gov (United States)

    Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

    2017-11-01

    A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

  17. Comparing the Electrochemical Performance of LiFePO4/C Modified by Mg Doping and MgO Coating

    Directory of Open Access Journals (Sweden)

    Jianjun Song

    2013-01-01

    Full Text Available Supervalent cation doping and metal oxide coating are the most efficacious and popular methods to optimize the property of LiFePO4 lithium battery material. Mg-doped and MgO-coated LiFePO4/C were synthesized to analyze their individual influence on the electrochemical performance of active material. The specific capacity and rate capability of LiFePO4/C are improved by both MgO coating and Mg doping, especially the Mg-doped sample—Li0.985Mg0.015FePO4/C, whose discharge capacity is up to 163 mAh g−1, 145.5 mAh g−1, 128.3 mAh g−1, and 103.7 mAh g−1 at 1 C, 2 C, 5 C, and 10 C, respectively. The cyclic life of electrode is obviously increased by MgO surface modification, and the discharge capacity retention rate of sample LiFePO4/C-MgO2.5 is up to 104.2% after 100 cycles. Comparing samples modified by these two methods, Mg doping is more prominent on prompting the capacity and rate capability of LiFePO4, while MgO coating is superior in terms of improving cyclic performance.

  18. On heavy carbon doping of MgB2

    International Nuclear Information System (INIS)

    Kasinathan, Deepa; Lee, K.-W.; Pickett, W.E.

    2005-01-01

    Heavy carbon doping of MgB 2 is studied by first principles electronic structure studies of two types, an ordered supercell (Mg(B 1-x C x ) 2 , x 0.0833) and also the coherent potential approximation method that incorporates effects of B-C disorder. For the ordered model, the twofold degenerate σ-bands that are the basis of the high temperature superconductivity are split by 60 meV (i.e. 7 meV/% C) and the σ Fermi cylinders contain 0.070 holes/cell, compared to 0.11 for MgB 2 . A virtual crystal treatment tends to overestimate the rate at which σ holes are filled by substitutional carbon. The coherent potential approximation (CPA) calculations give the same rate of band filling as the supercell method. The occupied local density of states of C is almost identical to that of B in the upper 2 eV of the valence bands, but in the range -8 eV to -2 eV, C has a considerably larger density of states. The calculations indicate that the σ Fermi surface cylinders pinch off at the zone center only above the maximum C concentration x ∼ 0.10. These results indicate that Mg(B 1-x C x ) 2 as well as Mg 1-x Al x B 2 is a good system in which to study the evolution of the unusual electron-phonon coupling character and strength as the crucial σ hole states are filled

  19. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  20. Al-doped MgB_2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan

    2016-01-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB_2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB_2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB_2. Above a certain level of Al doping, enhanced conductive properties of MgB_2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  1. The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2016-10-01

    Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

  2. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  3. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  4. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  5. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  6. Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

    2011-09-14

    We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

  7. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  8. Phthalocyanine doping to improve critical current densities in MgB2 tapes

    International Nuclear Information System (INIS)

    Zhang Xianping; Ma Yanwei; Wang Dongliang; Gao Zhaoshun; Wang Lei; Qi Yanpeng; Awaji, Satoshi; Watanabe, Kazuo; Mossang, Eric

    2009-01-01

    Phthalocyanine-doped MgB 2 tapes were prepared by the in situ powder-in-tube method. The relationships between the critical current properties, crystallinity and microstructure were studied as a function of the phthalocyanine doping level. It is found that both H irr and H c2 were improved when MgB 2 samples were doped with phthalocyanine, which are mainly attributed to the effective carbon substitution and enhanced flux pinning strength caused by very fine grain sizes. Furthermore, compared to pure samples, the MgO content remained almost unchanged in all doped tapes, which is very beneficial to having better grain connectivity in MgB 2 . Significantly improved J c was obtained in the phthalocyanine-doped MgB 2 tapes, especially under high magnetic fields.

  9. Doping effects of carbon and titanium on the critical current density of MgB2

    International Nuclear Information System (INIS)

    Shen, T M; Li, G; Cheng, C H; Zhao, Y

    2006-01-01

    MgB 2 bulks doped with Ti or/and C were prepared by an in situ solid state reaction method to determine the combined effect of C and Ti doping and to probe the detailed mechanism. The magnetization measurement shows that Mg 0.95 Ti 0.05 B 1.95 C 0.05 sample has significantly improved flux pinning compared to the MgB 1.95 C 0.05 sample at 20 K, indicating that C and Ti are largely cooperative in improving the J c (H) behaviour. No TiC phase was detected in the x-ray diffraction (XRD) patterns. Moreover, the overlap of the (100) peaks of MgB 1.95 C 0.05 and Mg 0.95 Ti 0.05 B 1.95 C 0.05 showed that Ti doping does not reduce the amount of C in MgB 2 . Microstructural analyses revealed that the addition of Ti eliminated the porosity present in the carbon-doped MgB 2 pellet, resulting in an improved intergrain connectivity and an increase of effective current pass. Further, MgB 2 doped with C and Ti, which mainly consists of spherical grains about 200-300 nm in size, shows an higher grain homogeneity than the C-doped sample, suggesting that the Ti doping in MgB 1-x C x has played an important role in obtaining uniform grains

  10. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    International Nuclear Information System (INIS)

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-01-01

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  11. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  12. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Science.gov (United States)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  13. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  14. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  15. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  16. Structural and optical properties of Mg doped ZnS quantum dots and biological applications

    Science.gov (United States)

    Ashokkumar, M.; Boopathyraja, A.

    2018-01-01

    Zn1-xMgxS (x = 0, 0.2 and 0.4) quantum dots (QDs) were prepared by co-precipitation method. The Mg dopant did not modify the cubic blende structure of ZnS QDs. The Mg related secondary phase was not detected even for 40% of Mg doping. The size mismatch between host Zn ion and dopant Mg ion created distortion around the dopant. The creation of distortion centres produced small changes in the lattice parameters and diffraction peak position. All the QDs showed small sulfur deficiency and the deficiency level were increased by Mg doping. Band gap of the QD was decreased due to the dominated quantum confinement effect over compositional effect at initial doping of Mg. But at higher doping the band gap was increased due to compositional effect, since there was no change in average crystallite size. The prepared QDs had three emission bands in the UV and Visible regions corresponding to near band edge emission and defect related emissions. The electron transport reaction chain which forms free radicals was broken by sulfur vacancy trap sites. Therefore, the ZnS QDs had better antioxidant activity and the antioxidant behaviour was enhanced by Mg doping. The enhanced UV absorption and emission of 20% of Mg doped ZnS QDs let to maximize the zone of inhibition against E. Coli bacterial strain.

  17. Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

    Science.gov (United States)

    Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

    2014-02-01

    Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

  18. Influence of different ions doping on the antibacterial properties of MgO nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Yuanyuan; Wang, Wei, E-mail: weiwang@hust.edu.cn; Tan, Fatang; Cai, Yuncheng; Lu, Junwen; Qiao, Xueliang

    2013-11-01

    Compared with other inorganic antibacterial agents, magnesium oxide (MgO) nanopowders exhibit a unique antibacterial mechanism and various advantages in applications, having attracted extensive attention. In this study, MgO nanopowders doped with different ions (Li{sup +}, Zn{sup 2+} and Ti{sup 4+}) were synthesized by a sol–gel method, respectively. The structures and morphologies of the as-obtained precursors and nanopowders were characterized and confirmed by X-ray diffraction (XRD), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The influence of three metal ions doping on the antibacterial properties of MgO nanopowders was also investigated by their bactericidal activity against Escherichia coli (E. coli, ATCC 25922) using the broth microdilution method and the agar method. The results show that Li-doped MgO exhibits better antibacterial activity, Zn-doped and Ti-doped MgO display poorer antibacterial activity than pure MgO. It can be concluded that the influence of different ions doping on the antibacterial properties of MgO mainly lies on oxygen vacancies and basicity of nanopowders.

  19. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  20. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  1. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  2. Flux pinning behaviors of Ti and C co-doped MgB2 superconductors

    International Nuclear Information System (INIS)

    Yang, Y.; Zhao, D.; Shen, T.M.; Li, G.; Zhang, Y.; Feng, Y.; Cheng, C.H.; Zhang, Y.P.; Zhao, Y.

    2008-01-01

    Flux pinning behavior of carbon and titanium concurrently doped MgB 2 alloys has been studied by ac susceptibility and dc magnetization measurements. It is found that critical current density and irreversibility field of MgB 2 have been significantly improved by doping C and Ti concurrently, sharply contrasted to the situation of C-only-doped or Ti-only-doped MgB 2 samples. AC susceptibility measurement reveals that the dependence of the pinning potential on the dc applied field of Mg 0.95 Ti 0.05 B 1.95 C 0.05 has been determined to be U(B dc )∝B dc -1 compared to that of MgB 2 U(B dc )∝B dc -1.5 . As to the U(J) behavior, a relationship of U(J) ∝ J -0.17 is found fitting well for Mg 0.95 Ti 0.05 B 1.95 C 0.05 with respect to U(J) ∝ J -0.21 for MgB 2 . All the results reveal a strong enhancement of the high field pinning potential in C and Ti co-doped MgB 2

  3. Flux pinning behaviors of Ti and C co-doped MgB{sub 2} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.; Zhao, D.; Shen, T.M.; Li, G.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xian, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xian (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Zhang, Y.P. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)], E-mail: yzhao@swjtu.edu.cn

    2008-09-15

    Flux pinning behavior of carbon and titanium concurrently doped MgB{sub 2} alloys has been studied by ac susceptibility and dc magnetization measurements. It is found that critical current density and irreversibility field of MgB{sub 2} have been significantly improved by doping C and Ti concurrently, sharply contrasted to the situation of C-only-doped or Ti-only-doped MgB{sub 2} samples. AC susceptibility measurement reveals that the dependence of the pinning potential on the dc applied field of Mg{sub 0.95}Ti{sub 0.05}B{sub 1.95}C{sub 0.05} has been determined to be U(B{sub dc}){proportional_to}B{sub dc}{sup -1} compared to that of MgB{sub 2}U(B{sub dc}){proportional_to}B{sub dc}{sup -1.5}. As to the U(J) behavior, a relationship of U(J) {proportional_to} J{sup -0.17} is found fitting well for Mg{sub 0.95}Ti{sub 0.05}B{sub 1.95}C{sub 0.05} with respect to U(J) {proportional_to} J{sup -0.21} for MgB{sub 2}. All the results reveal a strong enhancement of the high field pinning potential in C and Ti co-doped MgB{sub 2}.

  4. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  5. SIMS and Raman studies of Mg-doped InN

    International Nuclear Information System (INIS)

    Davydov, V.Yu.; Kitaev, Yu.E.; Smirnov, A.N.; Lundina, E.Y.; Klochikhin, A.A.; Smirnov, M.B.; Lu, Hai; Schaff, William J.; Lee, H.M.; Lin, H.W.; Hong, Y.L.; Gwo, S.

    2008-01-01

    Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg =3.3 x 10 19 to 5.5 x 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Discharge characteristics of plasma display panels with Si-doped MgO protective layers

    Energy Technology Data Exchange (ETDEWEB)

    Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Barik, U K [Samtel Color Limited, Ghaziabad-201009 (India); Sarkar, Surajit; Biswas, Paramananda [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, Vandana [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Dwivedi, H K [Samtel Color Limited, Ghaziabad-201009 (India); Kumar, Satyendra [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2009-10-01

    We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.

  7. Raman and NMR study in MgO-doped LiNbO3 crystal

    International Nuclear Information System (INIS)

    Hu, L.J.; Chang, Y.H.; Chang, C.S.; Yang, S.J.; Hu, M.L.; Tse, W.S.

    1991-01-01

    This paper reports on the MgO-doped LiNbO 3 crystal grown and studied by NMR and Raman techniques. The solubility of MgO in the LiNbO 3 crystal is as much as 30 mole %. It is shown in NMR spectra that the number of Nb 5+ cations at A-site (Li-site) decrease as Mg concentration increased when the Mg content is lower than 5 mole %. The vibration of (NbO 6 ) octahedron and translations involving Li + and Mg 2+ cations motion can be identified by replacing Nb 5+ and Li + cations with Ta 5+ and Mg 2+ cations through Raman spectra. The 115 cm -1 and 151 cm -1 peaks are due to the translational modes of Mg 2+ and Li + cations. The doping mechanisms of MgO are proposed

  8. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  9. Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

    Science.gov (United States)

    Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

    2017-11-01

    Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

  10. Influence of iridium doping in MgB2 superconducting wires

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude

    2018-01-01

    MgB2 wires with iridium doping were manufactured using the in-situ technique in a composite Cu-Nb sheath. Reaction was performed at 700°C, 800°C or 900°C for 1h in argon atmosphere. A maximum of about 1.5 at.% Ir replaces Mg in MgB2. The superconducting transition temperature is slightly lowered...... by Ir doping. The formation of IrMg3 and IrMg4 secondary phase particles is evidenced, especially for a nominal stoichiometry with 2.0 at.% Ir doping. The critical current density and accommodation field of the wires are strongly dependent on the Ir content and are generally weakened in the presence...

  11. Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Singh, Jaspal; Vashihth, A.; Gill, Pritampal Singh; Verma, N. K.

    2015-01-01

    Zn 1-x Mg x O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles

  12. Preparation and characterisation of Os doped MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Grivel, J.-C., E-mail: jean@dtu.dk; Namazkar, S.; Alexiou, A.; Holte, O.J.

    2014-12-15

    Highlights: • Polycrystalline osmium doped MgB{sub 2} samples were prepared by solid state route. • Up to 1 at.% Mg can be replaced by Os in the MgB{sub 2} lattice. • T{sub c} decreases at a rate of 2.1 K/at.% Os upon doping. - Abstract: Polycrystalline samples with Mg{sub 1−x}Os{sub x}B{sub 2.04} nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB{sub 2} lattice. Beyond this doping level, unreacted Os and Mg-rich Mg–Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.

  13. Anomalous magnetism of superconducting Mg-doped InN film

    Directory of Open Access Journals (Sweden)

    P. H. Chang

    2016-02-01

    Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

  14. Investigations on structural, vibrational and dielectric properties of nanosized Cu doped Mg-Zn ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Anand [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Department of Physics, MEDICAPS Institute of Science and Technology, Pithampur 453331 (India); Rajpoot, Rambabu; Dar, M. A.; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com, E-mail: anand.212@gmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India)

    2016-05-23

    Transition metal Cu{sup 2+} doped Mg-Zn ferrite [Mg{sub 0.5}Zn{sub 0.5-x}Cu{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5)] were prepared by sol gel auto combustion (SGAC) method to probe the structural, vibrational and electrical properties. X-ray diffraction (XRD) pattern reveals a single-phase cubic spinel structure without the presence of any secondary phase corresponding to other structure. The average particle size of the parent Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} is found to be ~29.8 nm and is found to increase with Cu{sup 2+} doping. Progressive reduction in lattice parameter of Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} has been observed due to difference in ionic radii of cations with improved Cu doping. Spinel cubic structure is further confirmed by Raman spectroscopy. Small shift in Raman modes towards higher wave number has been observed in doped Mg-Zn ferrites. The permittivity and dielectric loss decreases at lower doping and increases at higher order doping of Cu{sup 2+}.

  15. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  16. Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

    International Nuclear Information System (INIS)

    Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

    2007-01-01

    In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

  17. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  18. Investigation of the effect of Mg doping for improvements of optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Caglar, Mujdat, E-mail: mcaglar@anadolu.edu.tr; Caglar, Yasemin; Ilican, Saliha

    2016-03-15

    Sol–gel spin coating method was used for the deposition of nanostructured undoped and Mg doped ZnO films. The effects of magnesium incorporation on the crystalline structure were investigated by XRD measurements and the structural deterioration was observed in the crystalline quality of the films with respect to increasing in Mg doping. All the samples exhibited a wurtzite structure. From the scanning electron microscopy (SEM) images obtained to investigate the surface morphology it was detected that an increase in Mg doping caused an improvement on the surface roughness and a reduction in the number of voids on the surface. To evaluate the absorption edges of the produced samples depending on the Mg, different methods were used and according to the obtained results, a shifting towards to high energies for the optical band gap was observed in each method. By using the single oscillator model, developed by DiDomenico and Wemple, the refractive index dispersion of the films was analyzed. E{sub o} and E{sub d} values of the 5% Mg doped film were found to be 5.76 eV and 11.80 eV, respectively. Within the scope of electrical properties, from Hall effect measurements, it was determined that all the films exhibited n-type behavior and the carrier concentration increased from 1.49×10{sup 16} to 1.20×10{sup 17} cm{sup −3} with increasing Mg doping.

  19. Mg-doped nano ferrihydrite - A new adsorbent for fluoride removal from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Mohapatra, M., E-mail: mamatamohapatra@yahoo.com [Institute of Minerals and Materials Technology, Bhubaneswar 751 013, Orissa (India); Hariprasad, D.; Mohapatra, L.; Anand, S.; Mishra, B.K. [Institute of Minerals and Materials Technology, Bhubaneswar 751 013, Orissa (India)

    2012-03-01

    The present study evaluates synthesized Mg-doped nano ferrihydrite powder as an adsorbent for F{sup -} removal from aqueous solutions. High surface area Mg-doped ferrihydrite was prepared by co-precipitation method under controlled conditions. Samples were prepared by varying Mg content in the range of 0.39-1.12%. Preliminary test work revealed that under similar conditions, with the increase in Mg content from 0.39 to 0.98% in doped ferrihydrite, % F{sup -} adsorption increased from 66 to 91%. Hence this sample was characterized by XRD, TEM, SAED and TG-DTA. Batch adsorption experiments were carried out by varying contact time (30-480 min), initial pH (1.0-10), initial fluoride concentration (10-150 mg/L), adsorbent dose (0.5-4 g/L), temperature (20-45 Degree-Sign C) and Cl{sup -} or SO{sub 4}{sup 2-} concentrations (nil to 50 mg/L). The results showed 0.98% Mg-doped ferrihydrite to be an excellent fluoride adsorbent giving maximum adsorption capacity of 64 mg/g. The time data fitted well to pseudo second order kinetic model. The isothermal data followed Langmuir model. Thermodynamic parameters confirmed the adsorption process to be spontaneous and endothermic. 89% of fluoride could be desorbed from loaded sample using 1 M NaOH.

  20. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  1. Emission spectra of phosphor MgSO4 doped with Dy and Mn

    International Nuclear Information System (INIS)

    Zhang Chunxiang; Chen Lixin; Tang Qiang; Luo Daling; Qiu Zhiren

    2001-01-01

    Emission spectra of phosphor MgSO 4 doped with Dy and Dy/Mn were measured with an optical multichannel analyzer and a linear heating system whose temperature was controlled by a microcomputer. The emission spectrum bands at 480 nm and 580 nm of phosphor MgSO 4 doped with Dy were observed in the three dimensional (3D) glow curves. Compared with the 3D spectrum of CaSO 4 :Dy and the spectrum bands of MgSO 4 :Dy shows the same wavelengths which resulted from the quantum transitions among the energy levels of Dy 3 '+ ions. The intensities of the glow peaks in both spectrum bands (480 nm and 580 nm) of phosphor MgSO 4 doped with Dy/Mn were dramatically reduced except the 380 degree C glow peak

  2. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  3. Effects of graphite doping on critical current density and microstructure of MgB2 bulks by an improved Mg-diffusion method

    International Nuclear Information System (INIS)

    Pan, X.F.; Zhao, Y.; Feng, Y.; Yang, Y.; Cheng, C.H.

    2008-01-01

    abstract: A series of graphite-doped MgB 2 bulks with high density have been successfully prepared by an improved Mg-diffusion method in ambient pressure. The effects of graphite doping on lattice parameters, T c , J c and microstructure of MgB 2 have been investigated. The results show that compared to the nano-C-doped or CNTs-doped MgB 2 , C is not easy to substitute B in graphite-doped MgB 2 . However, at the same C content, the graphite-doped MgB 2 has a higher J c . At 10 K and self-field, the J c for MgB 1.985 C 0.015 reaches 0.58 MA/cm 2 . For the MgB 1.945 C 0.055 , at 5 K, 7 T and 10 K, 6 T the J c achieves 10,000 A/cm 2 which is two orders of magnitude higher than that for the undoped sample. In addition to improving electron scattering and intergranular connectivity, the unreacted graphite in the graphite-doped MgB 2 is proposed to be responsible to the excellent J c properties of MgB 2 in high fields, due to depressed grain growth and enhanced grain boundary flux pinning

  4. Structural and critical current properties in Al-doped MgB2

    International Nuclear Information System (INIS)

    Zheng, D.N.; Xiang, J.Y.; Lang, P.L.; Li, J.Q.; Che, G.C.; Zhao, Z.W.; Wen, H.H.; Tian, H.Y.; Ni, Y.M.; Zhao, Z.X.

    2004-01-01

    A series of Al-doped Mg 1-x Al x B 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2 , measurements on the superconducting transition temperature T c , irreversible field B irr and critical current density J c were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration

  5. Structural and critical current properties in Al-doped MgB 2

    Science.gov (United States)

    Zheng, D. N.; Xiang, J. Y.; Lang, P. L.; Li, J. Q.; Che, G. C.; Zhao, Z. W.; Wen, H. H.; Tian, H. Y.; Ni, Y. M.; Zhao, Z. X.

    2004-08-01

    A series of Al-doped Mg 1- xAl xB 2 samples have been fabricated and systematic study on structure and superconducting properties have been carried out for the samples. In addition to a structural transition observed by XRD, TEM micrographs showed the existence of a superstructure of double c-axis lattice constant along the direction perpendicular to the boron honeycomb sheet. In order to investigate the effect of Al doping on flux pinning and critical current properties in MgB 2, measurements on the superconducting transition temperature Tc, irreversible field Birr and critical current density Jc were performed too, for the samples with the doping levels lower than 0.15 in particular. These experimental observations were discussed in terms of Al doping induced changes in carrier concentration.

  6. Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si

    Directory of Open Access Journals (Sweden)

    Edwin Soh

    2015-03-01

    Full Text Available Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF, foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

  7. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  8. Lattice location of Mg in GaN: a fresh look at doping limitations

    CERN Document Server

    AUTHOR|(CDS)2069243; Augustyns, Valerie; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; De Lemos Lima, Tiago Abel; Lippertz, Gertjan; Martins Correia, Joao; Castro Ribeiro Da Silva, Manuel; Kappers, Menno; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

    2017-01-01

    Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2E19 cm−3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

  9. Intraband scattering studies in carbon- and aluminium-doped MgB2

    International Nuclear Information System (INIS)

    Samuely, P.; Szabo, P.; Hol'anova, Z.; Bud'ko, S.; Canfield, P.

    2006-01-01

    Magnetic field effect on the point-contact spectra of the Al- and C-substituted MgB 2 is presented. It is shown that suppression of the π-band contribution to the spectrum is different in the aluminium- and carbon-doped samples. The carbon substitution leads to a stronger enhancement of the π-band scattering while the Al-doping does not change the ratio between the π and σ scatterings

  10. Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

    2015-01-15

    The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

  11. CO_2 capture in Mg oxides doped with Fe and Ni

    International Nuclear Information System (INIS)

    Sanchez S, I. F.

    2016-01-01

    In this work the CO_2 capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe_2O_3 phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO_2 in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO_2 capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO_2 capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO_2 capture. The different stages of mass loss and thermal

  12. Mg-doping experiment and electrical transport measurement of boron nanobelts

    International Nuclear Information System (INIS)

    Kirihara, K.; Hyodo, H.; Fujihisa, H.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.

    2006-01-01

    We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10 -3 (Ω cm) -1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10 -3 (cm 2 Vs -1 ) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

  13. Morphological and optical studies of zinc oxide doped MgO

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Zayani Jaafar, E-mail: jaafar.zayani@yahoo.fr; Matoussi, Adel

    2016-06-25

    This paper reports morphological and optical characterizations of sintered (ZnO){sub 1−x}(MgO){sub x} composite materials. The effects of MgO doping content on these pellets properties have been analyzed. The SEM observations have shown rougher surfaces of the samples covered by grains having prismatic shapes and different sizes. From reflectance and absorption measurements, we have determined the band gap energy which tends to augment from 3.287 to 3.827 eV as the doping content increases. This widening of the optical band gap is explained by the Burstein-Moss effect which causes a significant increase of electron concentration (2.89 10{sup 18}−5.1910{sup 20} cm{sup −3}). In addition, the absorption coefficient, Urbach energy, optical constants (refractive index, extinction coefficient, dielectric constant) and dispersion parameters, such as E{sub 0} (single-oscillator energy), E{sub d} (dispersive energy) were determined of the (ZnO){sub 1−x}(MgO){sub x} composites and analyzed. - Highlights: • (ZnO){sub 1−x}(MgO){sub x} composites were synthesized by solid state sintering method. • MgO doping increased the band gap energy. • SEM observations have shown a decrease of grain sizes when the MgO doping increases. • Optical constants and dispersion parameters were determined and analyzed.

  14. Thermoelectric properties of Al doped Mg{sub 2}Si material

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  15. Superconducting and normal state properties of carbon doped and neutron irradiated MgB2

    International Nuclear Information System (INIS)

    Wilke, R.H.T.; Samuely, P.; Szabo, P.; Holanova, Z.; Bud'ko, S.L.; Canfield, P.C.; Finnemore, D.K.

    2007-01-01

    Current research in MgB 2 focuses on the effects various types of perturbations have on the superconducting properties of this novel two-gap superconductor. In this article we summarize the effects of carbon doping and neutron irradiation in bulk MgB 2 . Low levels of carbon doping and light neutron irradiation result in significant enhancements in H c2 . At high fluences, where superconductivity is nearly fully suppressed, superconductivity can be restored through post exposure annealing. However, this results in a change in the interdependencies of the normal state and superconducting properties (ρ 0 , T c , H c2 ), with little or no enhancement in H c2

  16. Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy

    International Nuclear Information System (INIS)

    Yeoh, W.K.; Zheng, R.K.; Ringer, S.P.; Li, W.X.; Xu, X.; Dou, S.X.; Chen, S.K.; MacManus-Driscoll, J.L.

    2011-01-01

    Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB 2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB 2 , which is basically due to lattice strain.

  17. Al-doped MgB{sub 2} materials studied using electron paramagnetic resonance and Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koç University, Rumelifeneri Yolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Freiburg Institute for Advanced Studies (FRIAS), Universität Freiburg, Albertstr. 19, Freiburg (Germany)

    2016-05-16

    Undoped and aluminum (Al) doped magnesium diboride (MgB{sub 2}) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB{sub 2}. Above a certain level of Al doping, enhanced conductive properties of MgB{sub 2} disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  18. Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires

    Science.gov (United States)

    Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo

    2010-06-01

    The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.

  19. Effect of malic acid doping on the structural and superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N.; Sudesh; Stuti Rani; Varma, G.D.

    2010-01-01

    The samples have been prepared via standard solid state reaction route with nominal compositions MgB 2 + x wt% malic acid (x = 0, 5 and 10) by sintering at two different temperatures: 800 and 850 deg C in argon atmosphere. Improvement in upper critical fields (H c2 ) and irreversibility field (H irr ) of doped samples as compared to undoped samples have been observed. At 10 K, critical current densities (J c ) of the 5 and 10 wt% malic acid doped MgB 2 samples sintered at 850 deg C have higher values as compared to undoped sample sintered at the same temperature in the fields greater than 3 T. However, J c values of 5 wt% malic acid doped sample are higher than 10 wt% doped sample in the entire applied field region (0 - 7 T). In case of the samples sintered at 800 deg C improvement in J c values of 5 wt% doped sample have been found in entire field region as compared to undoped sample. On the other hand we see deterioration in J c values of 10 wt% doped samples sintered at 800 deg C as compared to undoped samples sintered at same temperature. The correlations between structural and superconducting properties will be described and discussed in this paper. (author)

  20. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  1. Flux pinning properties of impurity doped MgB2 bulks synthesized by diffusion method

    International Nuclear Information System (INIS)

    Ueda, Shinya; Shimoyama, Jun-ichi; Yamamoto, Akiyasu; Katsura, Yukari; Iwayama, Isao; Horii, Shigeru; Kishio, Kohji

    2005-01-01

    Doping effects of carbon-containing impurities on the critical current properties and microstructure were systematically studied for highly dense MgB 2 bulks prepared by the diffusion method starting from magnesium and boron which are separately packed in sealed stainless tubes. Obtained samples exhibited improved critical current density, J c , simply by an increase of effective current pass. A non-doped MgB 2 recorded almost double high J c at 20 K compared with those of the conventional porous MgB 2 bulks having ∼50% of the theoretical density, while irreversibility field, H irr , did not largely change. J c under high magnetic fields were enhanced by doping of carbon-containing impurities, such as SiC and B 4 C. Optimal doping levels of SiC and B 4 C for high critical current properties at 20 K are found to be ∼2% and 5%, respectively, as nominal carbon concentration at boron site. Difference in the optimal doping levels is originated from the difference in their reactivity

  2. Thermoluminescence of the Z centre in Mg-doped KCl

    International Nuclear Information System (INIS)

    Kamavisdar, V.S.; Deshmukh, B.T.

    1980-01-01

    Optical absorption and thermoluminescence measurements on KCl:Mg 2+ are reported. Bleaching in F band introduces a new glow peak at 406 K in the glow curves. A similar peak is observed in microcrystalline powders. When this peak is thermally cleaned, the broadening of the absorption observed in prolonged F bleached crystals is removed. On the basis of these observations, the glow peak at 406 K is tentatively attributed to Z 1 centres. The glow peak at 394 K observed in microcrystalline powders is attributed to a combined effect of deformation and Z 1 centres. (author)

  3. Analysis of isothermal sintering of zinc-titanate doped with MgO

    Directory of Open Access Journals (Sweden)

    Obradović N.

    2007-01-01

    Full Text Available The aim of this work was analysis of isothermal sintering of zinc titanate ceramics doped with MgO obtained by mechanical activation. Mixtures of ZnO, TiO2 and MgO (0, 1.25 and 2.5% were mechanically activated 15 minutes in a planetary ball mill. The powders obtained were pressed under different pressures and the results were fitted with a phenomenological compacting equation. Isothermal sintering was performed in air for 120 minutes at four different temperatures. Structural characterization of ZnO-TiO2-MgO system after milling was performed at room temperature using XRPD measurements. DTA measurements showed different activation energies for pure and doped ZnO-TiO2 systems. Thus addition of MgO stabilizes the crystal structure of zinc titanate.

  4. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  5. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  6. Phase transition and magnetic properties of Mg-doped hexagonal close-packed Ni nanoparticles

    International Nuclear Information System (INIS)

    Yang Jinghai; Feng Bo; Liu Yang; Zhang Yongjun; Yang Lili; Wang Yaxin; Wei Maobin; Lang Jihui; Wang Dandan; Liu Xiaoyan

    2008-01-01

    Mg-doped Ni nanoparticles with the hexagonal close-packed (hcp) and face-centered cubic (fcc) structure have been synthesized by sol-gel method sintered at different temperatures in argon atmosphere. The sintering temperature played an important role in the control of the crystalline phase and the particle size. The pure hcp Mg-doped Ni nanoparticles with average particle size of 6.0 nm were obtained at 320 deg. C. The results indicated that the transition from the hcp to the fcc phase occurred in the temperature range between 320 deg. C and 450 deg. C. Moreover, the VSM results showed that the hcp Mg-doped Ni nanoparticles had unique ferromagnetic and superparamagnetic behavior. The unsaturation even at 5000 Oe is one of the superparamagnetic characteristics due to the small particle size. From the ZFC and FC curves, the blocking temperature T B of the hcp sample (6.0 nm) was estimated to be 10 K. The blocking temperature was related to the size of the magnetic particles and the magnetocrystalline anisotropy constant. By theoretical calculation, the deduced particle size was 6.59 nm for hcp Mg-doped Ni nanoparticles which was in agreement with the results of XRD and TEM

  7. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Song, Keun Man

    2014-01-01

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

  8. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

    2014-01-15

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

  9. Effects of glucose doping on the MgB{sub 2} superconductors using cheap crystalline boron

    Energy Technology Data Exchange (ETDEWEB)

    Parakkandy, Jafar Meethale [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shahabuddin, Mohammed, E-mail: mshahab@ksu.edu.sa [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shah, M. Shahabuddin; Alzayed, Nasser S.; Qaid, Salem A.S.; Madhar, Niyaz Ahmad; Ramay, Shahid M. [Department of Physics and Astronomy, College of Science, PO Box 2455, King Saud University, Riyadh 11451,Saudi Arabia (Saudi Arabia); Shar, Muhammad Ali [Mechanical Engineering Department, College of Engineering, P.O. Box 800, King Saud University, Riyadh 11421 (Saudi Arabia)

    2015-12-15

    Highlights: • First report on glucose doped MgB{sub 2} superconductor by single step dry mixing approach. • Cheap crystalline boron used for the sample preparation. • Microstructure and superconducting properties of the superconductors are discussed. • Less degradation in low field critical current density observed. • MgB{sub 2} with 2 at. % glucose doped showed the highest J{sub c}, ≈ 2 × 10{sup 4}A/cm{sup 2} for 20 K at 3 T. - Abstract: We report the effect of glucose (C{sub 6}H{sub 12}O{sub 6}) doping on the structural and electromagnetic properties of MgB{sub 2} superconductor fabricated by dry mixing using planetary ball milling. Herein, as-prepared bulk polycrystalline Mg (B{sub 1–x}C{sub x}) {sub 2} samples with different doping levels (x = 0, 2, 4, and 6 at. %) were systematically studied by X-ray diffraction, magnetic and resistivity measurements, and microstructure analysis. When carbon doped, the reduction in critical transition temperature and shrinkage in a-lattice were obviously observed. This resulted in structural distortion of the MgB{sub 2} lattice, and thereby, enhanced an impurity scattering. In addition to these, upper critical field and high-field critical current densities were also enhanced. On the other hand, both pinning force and low-field critical current density are decreased. The high field enhancement and low field degradation are due to increase in impurity scattering and decrease in pinning force respectively.

  10. Highly efficient green light harvesting from Mg doped ZnO nanoparticles: Structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Sarla, E-mail: mail2sarlasharma@gmail.com [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Vyas, Rishi [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Neha [Department of Physics, University of Rajasthan, Jaipur 302055 (India); Singh, Vidyadhar [Okinawa Institute of Science and Technology, Graduate University, Okinawa 9040495 (Japan); Singh, Arvind [Department of Physics, Institute of Chemical Technology, Mumbai 400 019 (India); Kataria, Vanjula; Gupta, Bipin Kumar [National Physical Laboratory (CSIR), New Delhi 110012 (India); Vijay, Y.K. [Department of Physics, University of Rajasthan, Jaipur 302055 (India)

    2013-03-05

    Graphical abstract: Demonstration of highly efficient green light emission harvesting from Mg doped ZnO nanoparticles were synthesized via facile wet chemical route with an average particle size ∼15 nm. The resulted nanoparticles exhibit intense green emission peaking at 530 nm upon 325 nm excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg and beyond it exhibits a decrees in emission. The obtained highly luminescent green emission of ZnO nanoparticle would be an ultimate choice for next generation optoelectronics device materials. Highlights: ► Zn{sub 1−x}Mg{sub x}O nanoparticles were prepared by mechanochemical processing. ► High blue emission intensity was observed contrary to previous reports. ► Blue emission is suggested to be originating from the high density of defects. ► Defect density in as-milled condition is very high resulting in high emission. ► Mg promoted non-radiative recombination and lowered intensities. -- Abstract: Highly efficient green light emission was observed from Mg doped ZnO nanoparticles synthesized via facile wet chemical route with an average particle size ∼15 nm. The XRD analysis confirmed the growth of wurtzite phase of ZnO nanoparticles. Moreover, the optical properties of these nanoparticles were investigated by different spectroscopic techniques. The resulted nanoparticles exhibit intense green emission peaking at 530 nm (2.34 eV) upon 325 nm (3.81 eV) excitation. The photoluminescence (PL) intensity of visible emission depends upon the doping concentration of Mg. The PL intensity was found maximum up to 4% doping of Mg, and beyond it exhibits a decrees in emission. Furthermore, by varying the band gap from 3.50 to 3.61 eV, the PL spectra showed a near band edge (NBE) emission at wavelength around 370 nm (3.35 eV) and a broad deep level emission in the visible region. The obtained highly

  11. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  12. Intermodulation distortion and surface resistance in impurity-doped YBCO and MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Agassi, Y.D. [Naval Surface Warfare Center, Carderock Division, Bethesda, MD 20817 (United States); Oates, D.E., E-mail: oates@ll.mit.edu [MIT-Lincoln Laboratory, Lexington, MA 02420 (United States)

    2014-11-15

    Highlights: • Calculations of impurity-doping effects on surface resistance and intermodulation distortion. • The calculations are compared with previously published measurements in YBCO and MgB{sub 2}. • Excellent agreement between calculations and experiments are shown. • The effects of the symmetry of the energy gap are presented and discussed. - Abstract: Calculations of the microwave intermodulation distortion (IMD) and surface resistance of impurity-doped YBCO, MgB{sub 2} and Nb are presented. These are qualitatively distinct superconductors due to their energy-gap symmetries, d-wave (ℓ = 2), i-wave (ℓ = 6) and s-wave (ℓ = 0), respectively. The calculations are compared with previously published IMD and surface-resistance measurements of impurity-doped YBCO and Nb. The agreement between the data and fitted calculations is excellent in all cases. In the absence of IMD and surface-resistance measurements for doped MgB{sub 2}, we present representative predictions. The calculations are based on a Green’s-function approach that yields analytical expressions for the penetration depth and the nonlinear kernel in the constitutive relation. This penetration-depth expression reproduces the measured T{sup 2} low-temperature variation for doped superconductors and the surface-resistance reduction over that of the pure material. Regarding the IMD in superconductors with a nodal energy gap, the effect of doping is to enhance its magnitude and suppress its low-temperature 1/T{sup 2} divergence predicted by the nonlinear Meissner effect.

  13. Synthesis and characterization of Mg-doped ZnO hollow spheres

    International Nuclear Information System (INIS)

    Hammad, Talaat M.; Salem, Jamil K.

    2011-01-01

    Mg-doped ZnO nanoparticles were synthesized by a simple chemical method at low temperature with Mg:Zn atomic ratio from 0 to 7%. The synthesis process is based on the hydrolysis of zinc acetate dihydrate and magnesium acetate tetrahydrate were heated under refluxing at 65 °C using methanol as a solvent. X-ray diffraction analysis reveals that the Mg-doped ZnO crystallizes in a wurtzite structure with crystal size of 5–12 nm. These nanocrystals self-aggregated themselves into hollow spheres of size of 800–1100 nm. High resolution transmission electron microscopy images show that each sphere is made up of numerous nanoparticles of average diameter 5–11 nm. The XRD patterns, SEM and TEM micrographs of doping of Mg in ZnO confirmed the formation of hollow spheres indicating that the Mg 2+ is successfully substituted into the ZnO host structure of the Zn 2+ site. Furthermore, the UV–Vis spectra and photoluminescence (PL) spectra of the ZnO nanoparticles were also investigated. The band gap of the nanoparticles can be tuned in the range of 3.36–3.55 eV by the use of the dopants.

  14. Auto-combustion synthesis and characterization of Mg doped CuAlO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Shraddha, E-mail: shraddhaa32@gmail.com; Parveen, Azra; Naqvi, A. H. [Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg.& Technology, Aligarh Muslim University, Aligarh-202002 (India)

    2015-06-24

    The synthesis of pure and Mg doped Copper aluminumoxide CuAlO{sub 2}nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO{sub 2} sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO{sub 2} has been studied over a wide range of frequencies by using complex impedance spectroscopy.The variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.

  15. Phase constitution in Sr and Mg doped LaGaO3 system

    International Nuclear Information System (INIS)

    Zheng Feng; Bordia, Rajendra K.; Pederson, Larry R.

    2004-01-01

    Sr and Mg doped lanthanum gallate perovskites (La 1-x Sr x Ga 1-y Mg y O 3-δ , shortened as LSGM-XY where X and Y are the doping levels in mole percentage (mol%) at the La- or A-site and the Ga- or B-site, respectively) are promising electrolyte materials for intermediate temperature solid oxide fuel cells (SOFCs). In this study, we have investigated the primary perovskites as well as the secondary phases formed in terms of doping content changes and A/B ratio variations in these materials. Fifteen powder compositions (three doping levels, X=Y=0, 0.1, and 0.2 mol; and five A/B ratios 0.95, 0.98, 1.00, 1.02, and 1.05) were synthesized by the glycine-nitrate combustion process (GNP). These powders were equilibrated by calcining at 1500 deg. C for 9 h prior to crystalline phase characterization by X-ray powder diffraction (XRD). From the results of this study and the available phase diagrams in the literature on constituent binary oxide systems, we propose a crystalline phase diagram of the La 2 O 3 -SrO-Ga 2 O 3 -MgO quaternary system at elevated temperature (1500 deg. C)

  16. Solar-blind wurtzite MgZnO alloy films stabilized by Be doping

    International Nuclear Information System (INIS)

    Su, Longxing; Zhu, Yuan; Zhang, Quanlin; Chen, Mingming; Ji, Xu; Wu, Tianzhun; Gui, Xuchun; Xiang, Rong; Tang, Zikang; Pan, Bicai

    2013-01-01

    Mg x Zn 1−x O alloy films were deposited on c-plane sapphire substrates by radio frequency plasma-assisted molecular beam epitaxy (rf-PMBE). The phase segregation occurred when x was larger than 33%. Be doping was found experimentally able to stabilize the high-Mg-content MgZnO alloy. By alloying 1–2% Be into MgZnO, the band gap of as-prepared quaternary alloys can be raised to the solar-blind range (4.5 eV). Calculated formation energy of the alloys based on first principle reveals that a small amount of Be incorporation can reduce the formation energy of high-Mg-content MgZnO alloys and results in a more stable system, which justifies our experimental observations. (paper)

  17. Correlated vortex pinning in Si-nanoparticle doped MgB2

    OpenAIRE

    Kusevic, I.; Babic, E.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

    2003-01-01

    The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $T\\geq 28$ K in magnetic fields $B\\leq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_{\\phi}$) and is very different ...

  18. Effects of graphite doping on critical current density and microstructure of MgB{sub 2} bulks by an improved Mg-diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Pan, X.F. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)], E-mail: yshao@home.swjtu.edu.cn; Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xi' an, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xi' an (China); Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2008-09-15

    abstract: A series of graphite-doped MgB{sub 2} bulks with high density have been successfully prepared by an improved Mg-diffusion method in ambient pressure. The effects of graphite doping on lattice parameters, T{sub c}, J{sub c} and microstructure of MgB{sub 2} have been investigated. The results show that compared to the nano-C-doped or CNTs-doped MgB{sub 2}, C is not easy to substitute B in graphite-doped MgB{sub 2}. However, at the same C content, the graphite-doped MgB{sub 2} has a higher J{sub c}. At 10 K and self-field, the J{sub c} for MgB{sub 1.985}C{sub 0.015} reaches 0.58 MA/cm{sup 2}. For the MgB{sub 1.945}C{sub 0.055}, at 5 K, 7 T and 10 K, 6 T the J{sub c} achieves 10,000 A/cm{sup 2} which is two orders of magnitude higher than that for the undoped sample. In addition to improving electron scattering and intergranular connectivity, the unreacted graphite in the graphite-doped MgB{sub 2} is proposed to be responsible to the excellent J{sub c} properties of MgB{sub 2} in high fields, due to depressed grain growth and enhanced grain boundary flux pinning.

  19. Excimer-laser-induced activation of Mg-doped GaN layers

    International Nuclear Information System (INIS)

    Lin, Y.-J.; Liu, W.-F.; Lee, C.-T.

    2004-01-01

    In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies (i.e., V Ga H 2 ) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration

  20. Investigation of fluorine adsorption on nitrogen doped MgAl_2O_4 surface by first-principles

    International Nuclear Information System (INIS)

    Lv, Xiaojun; Xu, Zhenming; Li, Jie; Chen, Jiangan; Liu, Qingsheng

    2016-01-01

    Graphical abstract: First-principles calculations indicate that MgAl_2O_4 surface is fluorine-loving, but hydrophobic. N doped MgAl_2O_4 (100) surface structure shows the highest fluorine adsorption performance and fluorine atom is more preferentially adsorbed on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: N doped MgAl_2O_4 (100) > Al_2O_3 (0001) > MgAl_2O_4 (100) > MgO (100). N doped MgAl_2O_4 is a promising candidate for fluorine removal. - Highlights: • MgAl_2O_4 surface is fluorine-loving, not hydrophilic. • Fluorine preferentially adsorbs on the Mg-Al bridge site. • Adsorption intensity follow this order: N doped MgAl_2O_4 > Al_2O_3 > MgAl_2O_4 > MgO. • Excellent adsorption performance attributes to electron compensation of N atom. • Nitrogen doped MgAl_2O_4 is a promising candidate for fluorine removal. - Abstract: The nature of fluorine adsorption on pure and N doped MgAl_2O_4 surface has been investigated by first-principles calculations based on the density functional theory. Calculated results indicate that MgAl_2O_4 surface is fluorine-loving, not hydrophilic. Nitrogen doped MgAl_2O_4 (100) surface shows the highest fluorine adsorption performance and fluorine atom preferentially adsorbs on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: Nitrogen doped MgAl_2O_4 (100) > Al_2O_3 (0001) > MgAl_2O_4 (100) > MgO (100). In-depth PDOS analysis suggested that 2p orbitals of F atom strongly hybridized with 3s- and 3p-orbitals of Al atom contribute to its high adsorption intensity. According to the analysis of Hirshfeld charge, the excellent fluorine adsorption performance of nitrogen doped MgAl_2O_4 attributes to the electron compensation effect of nitrogen atom and strong electrostatic interactions. All these evidences demonstrate a fact nitrogen doped MgAl_2O_4 is a promising candidate for fluorine removal.

  1. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

    International Nuclear Information System (INIS)

    Liu Yang; Yang Yongchun

    2016-01-01

    The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

  2. The superconducting properties of co-doped polycrystalline MgB2

    International Nuclear Information System (INIS)

    Moore, J D; Perkins, G K; Branford, W; Yates, K A; Caplin, A D; Cohen, L F; Chen, Soo Kien; Rutter, N A; MacManus-Driscoll, Judith L

    2007-01-01

    In this study we compare the critical current density, the irreversibility line and the upper critical field of four MgB 2 polycrystalline samples, which are either undoped or have 5% carbon or 5% carbon plus either 1% aluminium or 2% zirconium. We discuss how care must be taken for the extraction of the irreversibility line in such samples. We also show how ac susceptibility and Hall probe imaging can be used to examine whether the samples remain fully connected to the highest available fields. Compared to simple 5% carbon doping we find that co-doping provides modest improvement in the pinning properties at intermediate fields in the carbon plus zirconium doped sample

  3. Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

    International Nuclear Information System (INIS)

    Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

    2007-01-01

    We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

  4. Fabrication and Characterization of Mg-Doped GaN Nanowires

    International Nuclear Information System (INIS)

    Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

    2008-01-01

    Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

  5. Mössbauer and magnetic studies of surfactant mediated Ca-Mg doped ferrihydrite nanoparticles.

    Science.gov (United States)

    Layek, Samar; Mohapatra, M; Anand, S; Verma, H C

    2013-03-01

    Ultrafine (2-5 nm) particles of amorphous Ca-Mg co-doped ferrihydrite have been synthesized by surfactant mediated co-precipitation method. The evolution of the amorphous ferrihydrite by Ca-Mg co-doping is quite different from our earlier investigations on individual doping of Ca and Mg. Amorphous phase of ferrihydrite for the present study has been confirmed by X-ray diffraction (XRD) and Mössbauer spectroscopy at room temperature and low temperatures (40 K and 20 K). Hematite nanoparticles with crystallite size about 8, 38 and 70 nm were obtained after annealing the as-prepared samples at 400, 600 and 800 degrees C respectively in air atmosphere. Superparamagnetism has been found in 8 nm sized hematite nanoparticles which has been confirmed from the magnetic hysteresis loop with zero remanent magnetization and coercive field and also from the superparamagnetic doublet of its room temperature Mössbauer spectrum. The magnetic properties of the 38 and 70 nm sized particles have been studied by room temperature magnetic hysteresis loop measurements and Mössbauer spectroscopy. The coercive field in these hematite nanoparticles increases with increasing particle size. Small amount of spinel MgFe2O4 phase has been detected in the 800 degrees C annealed sample.

  6. Structural, optical and magnetic characterizations of Mn-doped MgO nanoparticles

    International Nuclear Information System (INIS)

    Azzaza, S.; El-Hilo, M.; Narayanan, S.; Judith Vijaya, J.; Mamouni, N.; Benyoussef, A.; El Kenz, A.; Bououdina, M.

    2014-01-01

    Structural, optical and room temperature magnetic properties of Mn-doped MgO nanoparticles with Mn fractions (5–50 at.%), were investigated. The as-prepared pure MgO, with grain size of about 15 nm, exhibits two magnetization components, one is diamagnetic and another is superparamagnetic. After removing the diamagnetic contribution, the magnetization curve exhibits superparamagnetic behavior which may be attributed to vacancy defects. As the Mn content increases, the lattice parameter decreases, the ferromagnetism appears and the emission bands were considerably blue shifted. First principle electronic structure calculations reveal the decrease of both the gap and the Curie temperature with increasing Mn concentration. The obtained results suggest that both Mn doping and oxygen vacancies play an important role in the development of room temperature ferromagnetism. - Graphical abstract: The measured room temperature magnetization curve for the Mn doped MgO with 5 at.%, 10 at.% and 20 at.%. - Highlights: • Combination of experimental and calculation methods. • Decrease of both the gap and the Curie temperature with increasing Mn content. • Ferromagnetism in MgO originate from interactions between defects

  7. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

    International Nuclear Information System (INIS)

    Zhao, Y.; Ke, C.; Cheng, C.H.; Feng, Y.; Yang, Y.; Munroe, P.

    2010-01-01

    Nano-diamond and titanium concurrently doped MgB 2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J c -H behavior and pinning force scaling features of MgB 2 have been investigated. Although T c was slightly depressed, J c of MgB 2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB 2 , a unique nanocomposite in which TiB 2 forms a thin layer surrounding MgB 2 grains whereas nano-diamond particles were wrapped inside the MgB 2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB 2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB 2 system.

  8. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Ke, C. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xian, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xian (China); Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Munroe, P. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2010-11-01

    Nano-diamond and titanium concurrently doped MgB{sub 2} nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J{sub c}-H behavior and pinning force scaling features of MgB{sub 2} have been investigated. Although T{sub c} was slightly depressed, J{sub c} of MgB{sub 2} have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J{sub c} value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB{sub 2}, a unique nanocomposite in which TiB{sub 2} forms a thin layer surrounding MgB{sub 2} grains whereas nano-diamond particles were wrapped inside the MgB{sub 2} grains. Besides, nano-diamond doping results in a high density stress field in the MgB{sub 2} samples, which may take responsibility for the {Delta}{kappa} pinning behavior in the carbon-doped MgB{sub 2} system.

  9. Ab-initio study of Mg-doped InN(0001 surface

    Directory of Open Access Journals (Sweden)

    A. Belabbes

    2013-01-01

    Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

  10. Effects of Hole-Doping on Superconducting Properties in MgCNi3 and its Relation to Magnetism

    International Nuclear Information System (INIS)

    Alzamora, M.; Sanchez, D. R.; Cindra, M.; Baggio-Saitovitch, E. M.

    2005-01-01

    Low temperature Moessbauer experiments were performed in Fe-doped and in C-deficiency MgCNi 3 . No magnetic moment was found for Fe in MgC(Ni 0.99 Fe 0.01 ) 3 sample and no magnetic hf field was observed at any temperature for all the samples. These results shown no evidence of magnetic fluctuation or magnetic ordering influencing the depress of superconductivity in hole-doped MgCNi 3 .

  11. Stability of the Al/TiB2 interface and doping effects of Mg/Si

    Science.gov (United States)

    Deng, Chao; Xu, Ben; Wu, Ping; Li, Qiulin

    2017-12-01

    The Al/TiB2 interface is of significant importance in controlling the mechanical properties of Al-B4C composites and tuning the heterogeneous nucleation of Al/Si alloys in industry. Its stability and bonding conditions are critical for both purposes. In this paper, the interfacial energies were investigated by first-principles calculations, and the results support the reported grain refinement mechanisms in Al/Si alloys. Moreover, to improve the mechanical properties of the interface, Mg and Si were doped at the interface, and our simulations show that the two interfaces will both weaken after doping Mg/Si, thus the formation of TiB2 is inhibited. As a result, the processability of the Al-B4C composites may be improved. Our results provide a theoretical basis and guidance for practical applications.

  12. Preparation and characterization of Ti-doped MgO nanopowders by a modified coprecipitation method

    International Nuclear Information System (INIS)

    Wang Wei; Qiao Xueliang; Chen Jianguo; Tan Fatang

    2008-01-01

    Ti-doped MgO nanopowders were prepared via a chemical coprecipitation method using acetic acid as a modifier in the presence of the surfactant polyethylene glycol (PEG 400). The as-obtained products were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), differential thermal analysis (DTA) and transmission electron microscopy (TEM). The results show that titanium atoms have been successfully incorporated into the crystal lattice of MgO with periclase structure. The modifier, acetic acid, can significantly reduce the particle size, and improve size distribution and dispersion of nanoparticles. In addition, the effect of doped titanium on the structure and morphology of magnesium oxide was also investigated

  13. Effect of CdS/Mg-Doped CdSe Cosensitized Photoanode on Quantum Dot Solar Cells

    Directory of Open Access Journals (Sweden)

    Yingxiang Guan

    2015-01-01

    Full Text Available Quantum dots have emerged as a material platform for low-cost high-performance sensitized solar cells. And doping is an effective method to improve the performance of quantum dot sensitized solar cells (QDSSCs. Since Kwak et al. from South Korea proved the incorporation of Mg in the CdSe quantum dots (QDs in 2007, the Mg-doped CdSe QDs have been thoroughly studied. Here we report a new attempt on CdS/Mg-doped CdSe quantum dot cosensitized solar cells (QDCSSC. We analyzed the performance of CdS/Mg-doped CdSe quantum dot cosensitized solar cells via discussing the different doping concentration of Mg and the different SILAR cycles of CdS. And we studied the mechanism of CdS/Mg-doped CdSe QDs in detail for the reason why the energy conversion efficiency had been promoted. It is a significant instruction on the development of Mg-doped CdSe quantum dot sensitized solar cells (QDSSCs.

  14. The mechanism of Tc performance for Zn doped MgB2 sintered in magnetic field

    International Nuclear Information System (INIS)

    Li, W.X.; Li, Y.; Chen, R.H.; Zeng, R.; Dou, S.X.

    2010-01-01

    The mechanism of magnetic field sintering on the critical transition temperature, T c , for the Zn doped MgB 2 superconductor was investigated with the observation of Raman scattering measurement and the Raman spectra fit analysis. The broadened E 2g mode in Raman spectra shows the strengthening of the electron-phonon coupling (EPC) for the sample sintered in magnetic field. A synchronous fluctuation is observed between the Raman characters of the E 2g mode and the T c .

  15. Titania doping effect on superconducting properties of MgB{sub 2} bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Serrano, G; Serquis, A [Institute Balseiro - Centra Atomico Bariloche and CONICET, (8400) S. C. de Bariloche, Rio Negro (Argentina); Bridoux, G, E-mail: serranog@ib.cnea.gov.a [Institute Balseiro - Centra Atomico Bariloche, (8400) S. C. de Bariloche, Rio Negro (Argentina)

    2009-05-01

    In this work we study the microstructural and superconducting properties of doped and undoped bulk MgB{sub 2} samples prepared by solid-state reaction, with 0 and 2.5 %at. nominal TiO{sub 2} nanotubes contents, annealed at different temperatures in the 750-900 deg. C range. We discuss the T{sub c}, J{sub c} and H{sub c2} performance and their correlation with the different synthesis parameters.

  16. Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-14

    Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

  17. Microscopic unravelling of nano-carbon doping in MgB{sub 2} superconductors fabricated by diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Wong, D.C.K. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Yeoh, W.K. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); De Silva, K.S.B. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Institute for Nanoscale Technology, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007 (Australia); Kondyurin, A.; Bao, P. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Li, W.X. [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Xu, X.; Peleckis, G.; Dou, S.X. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Ringer, S.P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); Zheng, R.K., E-mail: rongkun.zheng@sydney.edu.au [School of Physics, The University of Sydney, New South Wales 2006 (Australia)

    2015-09-25

    Highlights: • First report on nano-carbon doped MgB{sub 2} superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B{sub 4}C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB{sub 2} with 2.5% nano-carbon doped showed the highest J{sub c}, ≈10{sup 4} A/cm{sup 2} for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB{sub 2} crystalline. The strain increased across the doping level due to the carbon substitution in the MgB{sub 2} matrix. The broadening of the T{sub c} curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B{sub 4}C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB{sub 2}. Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J{sub c} of the 10% nano-carbon doped MgB{sub 2} bulk superconductor.

  18. Microscopic unravelling of nano-carbon doping in MgB2 superconductors fabricated by diffusion method

    International Nuclear Information System (INIS)

    Wong, D.C.K.; Yeoh, W.K.; De Silva, K.S.B.; Kondyurin, A.; Bao, P.; Li, W.X.; Xu, X.; Peleckis, G.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

    2015-01-01

    Highlights: • First report on nano-carbon doped MgB 2 superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B 4 C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB 2 with 2.5% nano-carbon doped showed the highest J c , ≈10 4 A/cm 2 for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB 2 crystalline. The strain increased across the doping level due to the carbon substitution in the MgB 2 matrix. The broadening of the T c curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B 4 C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB 2 . Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J c of the 10% nano-carbon doped MgB 2 bulk superconductor

  19. Thermodynamic properties of multiferroic Mg doped YbMnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Sattibabu, Bhumireddi, E-mail: bsb.satti@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Bhatnagar, A.K., E-mail: anilb42@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Hyderabad 500046 (India); Samatham, S. Shanmukharao; Singh, D. [Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, M.P. (India); Rayaprol, S. [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Das, D. [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Siruguri, V. [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Ganesan, V. [Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, M.P. (India)

    2015-09-25

    Highlights: • Specific heat data shows that T{sub N} increases for Mg doped YbMnO{sub 3} from 83 K to 86 K. • Yb{sub 1−x}Mg{sub x}MnO{sub 3} (x = 0.0 and 0.05) shows multiple magnetic transitions. • RCP are found to be 26.1 J/mol and 27.2 J/mol for YbMnO{sub 3} and Yb{sub 0.95}Mg{sub 0.05}MnO{sub 3}. - Abstract: Calorimetric studies of polycrystalline samples Yb{sub 1−x}Mg{sub x}MnO{sub 3} with x = 0.0 and 0.05 are reported. It is revealed that the Mg doping raises the antiferromagnetic ordering temperature, T{sub N,} from 83 K for x = 0.0 to 86 K for x = 0.05. A ferromagnetic ordering is also observed around 3 K. The broad feature in the specific heat data just above ferromagnetic ordering, is attributed to the Schottky anomaly. The estimated effective molecular fields from the Schottky analysis are H{sub mf} = 3.0 and 3.5 T for YbMnO{sub 3} and Yb{sub 0.95}Mg{sub 0.05}MnO{sub 3}, respectively. High temperature shift of Schottky anomaly with Mg doping indicates increase in effective molecular field of Mn at the Yb 4b site. The data supports that the idea that although molecular field is mainly responsible for the Schottky anomaly in Yb{sub 1−x}Mg{sub x}MnO{sub 3} and Mn{sup 3+} spin ordering also affects it. Magnetic part of the specific heat is obtained by subtracting the lattice contribution estimated using two Debye temperatures. The magnetic entropy change (ΔS{sub mag}) for pure and doped samples are 2.0 J mol{sup −1} K{sup −1} and 2.1 J mol{sup −1} K{sup −1} respectively, while the relative cooling power (RCP) calculate 26.1 J/mol, 27.2 J/mol for a field change of 10 T.

  20. Use of MgO doped with a divalent or trivalent metal cation for removing arsenic from water

    Science.gov (United States)

    Moore, Robert C; Holt-Larese, Kathleen C; Bontchev, Ranko

    2013-08-13

    Systems and methods for use of magnesium hydroxide, either directly or through one or more precursors, doped with a divalent or trivalent metal cation, for removing arsenic from drinking water, including water distribution systems. In one embodiment, magnesium hydroxide, Mg(OH).sub.2 (a strong adsorbent for arsenic) doped with a divalent or trivalent metal cation is used to adsorb arsenic. The complex consisting of arsenic adsorbed on Mg(OH).sub.2 doped with a divalent or trivalent metal cation is subsequently removed from the water by conventional means, including filtration, settling, skimming, vortexing, centrifugation, magnetic separation, or other well-known separation systems. In another embodiment, magnesium oxide, MgO, is employed, which reacts with water to form Mg(OH).sub.2. The resulting Mg(OH).sub.2 doped with a divalent or trivalent metal cation, then adsorbs arsenic, as set forth above. The method can also be used to treat human or animal poisoning with arsenic.

  1. Use of MgO doped with a divalent or trivalent metal cation for removing arsenic from water

    Energy Technology Data Exchange (ETDEWEB)

    Moore, Robert C.; Larese, Kathleen Caroline; Bontchev, Ranko Panayotov

    2017-05-30

    Systems and methods for use of magnesium hydroxide, either directly or through one or more precursors, doped with a divalent or trivalent metal cation, for removing arsenic from drinking water, including water distribution systems. In one embodiment, magnesium hydroxide, Mg(OH).sub.2 (a strong adsorbent for arsenic) doped with a divalent or trivalent metal cation is used to adsorb arsenic. The complex consisting of arsenic adsorbed on Mg(OH).sub.2 doped with a divalent or trivalent metal cation is subsequently removed from the water by conventional means, including filtration, settling, skimming, vortexing, centrifugation, magnetic separation, or other well-known separation systems. In another embodiment, magnesium oxide, MgO, is employed, which reacts with water to form Mg(OH).sub.2. The resulting Mg(OH).sub.2 doped with a divalent or trivalent metal cation, then adsorbs arsenic, as set forth above. The method can also be used to treat human or animal poisoning with arsenic.

  2. Thermoluminescence of magnesium doped zirconium oxide (ZrO2:Mg) UV irradiated

    International Nuclear Information System (INIS)

    Rivera Montalvo, Teodoro; Furetta, Claudio

    2008-01-01

    Full text: The monitoring of ultraviolet radiation (UVR) different thermoluminescent (TL) materials have been used to measure UVR. UV dosimetry using thermoluminescence phenomena has been suggested in the past by several authors. This technique has an advantage over others methods due to the readout of the samples. Other advantages of these phosphors are their small size, portability, lack of any power requirements, linear response to increasing radiation dose and high sensitivity. Zirconium oxide, recently received full attention in view of their possible use as thermoluminescent dosimeter (TLD), if doped with suitable activators, in radiation dosimetry. In the present investigation thermoluminescent (TL) properties of magnesium doped zirconium oxide (ZrO 2 :Mg) under ultraviolet radiation (UVR) were studied. The ZrO 2 :Mg powder of size 30-40 nm, having mono clinical structure, exhibit a thermoluminescent glow curve with one peak centered at 180 C degrees. The TL response of ZrO 2 :Mg as a function ultraviolet radiation exhibits four maxima centered at 230, 260, 310 and 350 nmn. TL response of ZrO 2 :Mg as a function of spectral irradiance of UV Light was linear in a wide range. Fading and reusability of the phosphor were also studied. The results showed that ZrO 2 :Mg nano powder has the potential to be used as a UV dosemeter in UVR dosimetry. (author)

  3. Significant enhancement of thermoelectric properties and metallization of Al-doped Mg2Si under pressure

    International Nuclear Information System (INIS)

    Morozova, Natalia V.; Korobeinikov, Igor V.; Karkin, Alexander E.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.; Takarabe, Ken-ichi; Mori, Yoshihisa; Nakamura, Shigeyuki

    2014-01-01

    We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg 2 Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg 2 Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg 2 Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg 2 Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10 −3 W/(K 2 m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg 2 Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.

  4. UV Thermoluminescence and Phosphorescence Properties of Mg2+ and Nd3+ Doped Nanostructured Al2O3

    International Nuclear Information System (INIS)

    Bitencourt, J F S; Goncalves, K A; Tatumi, S H; Marcos, P J B

    2010-01-01

    Mg 2+ and Nd 3+ doped aluminium oxide samples were produced by polymer calcination method. Mg 2+ doped samples did not exhibited significant fluorescence emission, using IR (LED, emission centered at 862nm) or green (Xe-lamp plus optical filter, emission centered at 520 nm) sources. Nonetheless, high thermostimulated luminescence was detected, with high emission peak at 190 0 C. A nanoscopic layer (about 50 nm width) of magnesium spinel was observed by Transmission Electronic Microscopy (TEM) for 2.61mol% doped sample; this layer can be the responsible for TL enhancement. Nd 3+ doped sample exhibited low phosphorescence emission in the UV (Schott U-340) using IR source. TL peaks were detected at 185 and 265 0 C; the intermediary peak showed the highest emission. Occurrence of NdAl and NdAl 2 structures were detected in 5 mol% doped sample and NdAl 2 and NdAl 4 structures in 10 mol% doped sample.

  5. Phase transitions in ZnTe co-doped with Mg and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V.A.; Sorokina, L.P. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, Av. IPN 2508, Mexico, D.F., 07360 (Mexico); Rodriguez de Santiago, M. [Departamento de Ingenieria Quimica Petrolera, IPN, Edif. 8, Mexico, D.F., 07738 (Mexico)

    2007-05-15

    Self-assembling of 1O4Mg tetrahedral clusters in ZnTe isoelectronically co-doped with Mg and oxygen in the ultra dilute oxygen impurity limit is described by a phase diagram. The occurrence of 1O4Mg clusters is a result of the second-order transition. The final stage of self-assembling when all oxygen impurities are in 1O4Mg clusters has to be reached also as a result of the second-order transition at the temperature close to the temperature of the occurrence of these clusters. The conditions of these phase transitions are obtained. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Mg doped InN and confirmation of free holes in InN

    International Nuclear Information System (INIS)

    Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

    2011-01-01

    We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

  7. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  8. Mg doping induced high structural quality of sol–gel ZnO nanocrystals: Application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Abed, Chayma; Bouzidi, Chaker [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Elhouichet, Habib, E-mail: Habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Tunis 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Ferid, Mokhtar [Laboratoire de Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, BP 95, Hammam-Lif 2050 (Tunisia)

    2015-09-15

    Highlights: • ZnO nancrystals doped with Mg were prepared from sol–gel method. • Structural and optical properties of ZnO:Mg nanocrystals were investigated. • Good crystalline quality of ZnO nanocrystals was reported after Mg doping. • Good photocatalytic activity of Mg doped ZnO nanocrystals was demonstrated under sun light illumination. - Abstract: Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol–gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman spectroscopy, diffuse reflectivity, and photoluminescence (PL). XRD analysis demonstrates that all prepared samples present pure hexagonal wurtzite structure without any Mg related phases. The NCs size varies from 26.82 nm to 42.96 nm with Mg concentrations; it presents an optimal value for 2% of Mg. The Raman spectra are dominated by the E{sub 2high} mode. For highly Mg doping (5%), the occurrence of silent B{sub 1(low)} mode suggested that the Mg ions do substitute at Zn sites in the ZnO lattice The band gap energy was estimated from both Tauc and Urbach methods and found to be 3.39 eV for ZnO:2%Mg. The PL spectra exhibit two emission bands in the UV and visible range. Their evolution with Mg doping reveals the reduction of defect density in ZnO at low Mg doping by filling Zn vacancies. In addition, it was found that further Mg doping, above 2%, improves the photocatalytic activity of ZnO NCs for photodegradation of Rhodamine B (RhB) under sunlight irradiation. The efficient electron–hole separation is the main factor responsible for the enhancement of photocatalytic performance of Mg doped ZnO NCs. Through this work, we show that by varying the Mg contents in ZnO, this material can be a potential candidate for both optoelectronic and photocatalytic applications.

  9. The effect of Mg doping on the Raman spectra of LiNbO3 crystals

    International Nuclear Information System (INIS)

    Lengyel, K.; Kovacs, L.; Peter, A.; Polgar, K.; Corradi, G.; Bourson, P.

    2007-01-01

    LiNbO 3 :Mg crystals doped with 0-8 mol% Mg with stoichiometric, intermediate and congruent compositions were systematically investigated by Raman spectroscopy in backscattering y(zx)y and y(zz)y geometries. The halfwidths of E(TO 3 ) - E(TO 9 ) and A 1 (TO 1 ) - A 1 (TO 4 ) bands, which have a significant composition dependence for undoped LiNbO 3 crystals, show only weak Mg-concentration dependence below the photorefractive threshold. This is a consequence of the counteracting effect of the decreasing amount of Nb ions at Li-ion sites (Nb Li ) and increasing amount of Mg ions at Li-ion sites (Mg Li ). The halfwidths of these bands, however, increase linearly with growing Mg content for samples above the threshold, irrespective of the Li/Nb ratio. The same effect was observed in the Mg dependence of the position and halfwidth of the two-phonon band at about 689 - 705 cm -1 . The change in the Mg concentration dependence of these parameters at a given Li/Nb ratio determines the same threshold value as that concluded from IR and UV spectroscopic measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Synthesis and lithium storage properties of Zn, Co and Mg doped SnO2 Nano materials

    CSIR Research Space (South Africa)

    Palaniyandy, Nithyadharseni

    2017-09-01

    Full Text Available In this paper, we show that magnesium and cobalt doped SnO2 (Mg-SnO2 and Co-SnO2) nanostructures have profound influence on the discharge capacity and coulombic efficiency of lithium ion batteries (LIBs) employing pure SnO2 and zinc doped SnO2 (Zn-Sn...

  11. Decorating Mg/Fe oxide nanotubes with nitrogen-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yong, E-mail: caoyangel@126.com [Institute of Environment and Municipal Engineering, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Jiao Qingze, E-mail: jiaoqz@bit.edu.cn [School of Chemical Engineering and the Environment, Beijing Institute of Technology, Beijing 100081 (China); Zhao Yun [School of Chemical Engineering and the Environment, Beijing Institute of Technology, Beijing 100081 (China); Dong Yingchao [Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland)

    2011-09-22

    Graphical abstract: Highlights: > Mg/Fe oxide nanotubes arrayed parallel to each other were prepared by an AAO template method. > The Mg/Fe oxide nanotubes decorated with CN{sub x} were realized by CVD of ethylenediamine on the outer surface of oxide nanotubes. > The magnetic properties of Mg/Fe oxide nanotubes were highly improved after being decorated. - Abstract: Mg/Fe oxide nanotubes decorated with nitrogen-doped carbon nanotubes (CN{sub x}) were fabricated by catalytic chemical vapor deposition of ethylenediamine on the outer surface of oxide nanotubes. Mg/Fe oxide nanotubes were prepared using a 3:1 molar precursor solution of Mg(NO{sub 3}){sub 2} and Fe(NO{sub 3}){sub 3} and anodic aluminum oxide as the substrate. The obtained samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). The XRD pattern shows that the oxide nanotubes are made up of MgO and Fe{sub 2}O{sub 3}. TEM and SEM observations indicate the oxide nanotubes are arrayed roughly parallel to each other, and the outer surface of oxide nanotubes are decorated with CN{sub x}. XPS results show the nitrogen-doped level in CN{sub x} is about 7.3 at.%. Magnetic measurements with VSM demonstrate the saturated magnetization, remanence and coercivity of oxide nanotubes are obvious improved after being decorated with CN{sub x}.

  12. Superior hydrogen storage kinetics of MgH2 nanoparticles doped with TiF3

    International Nuclear Information System (INIS)

    Xie, L.; Liu, Y.; Wang, Y.T.; Zheng, J.; Li, X.G.

    2007-01-01

    MgH 2 nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH 2 phase, without residual magnesium and with an average particle size of ∼300 nm. Milled with 5 wt.% TiF 3 as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of ∼0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under ∼20 bar hydrogen at room temperature. Compared with MgH 2 micrometer particles doped with 5 wt.% TiF 3 under the same conditions as the MgH 2 nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed

  13. First-principles investigation of Fe-doped MgSiO3-ilmenite

    International Nuclear Information System (INIS)

    Stashans, Arvids; Rivera, Krupskaya; Pinto, Henry P.

    2012-01-01

    First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO 3 mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using ΔSCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO 3 . Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe⇒Mg reaction can be described as substitutionally labile with Fe 2+ complex being found in the high-spin state at low pressure MgSiO 3 -ilmenite conditions.

  14. First-principles investigation of Fe-doped MgSiO{sub 3}-ilmenite

    Energy Technology Data Exchange (ETDEWEB)

    Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Rivera, Krupskaya [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Geologia y Minas, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Pinto, Henry P. [Interdisciplinary Center for Nanotoxicity, Department of Chemistry, Jackson State University, Jackson, Mississippi 39217-0510 (United States)

    2012-06-15

    First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO{sub 3} mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using {Delta}SCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO{sub 3}. Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe Rightwards-Double-Arrow Mg reaction can be described as substitutionally labile with Fe{sup 2+} complex being found in the high-spin state at low pressure MgSiO{sub 3}-ilmenite conditions.

  15. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Science.gov (United States)

    Hortelano, V.; Martínez, O.; Cuscó, R.; Artús, L.; Jiménez, J.

    2016-03-01

    Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

  16. CO{sub 2} capture in Mg oxides doped with Fe and Ni; Captura de CO{sub 2} en oxidos de Mg dopados con Fe y Ni

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez S, I. F.

    2016-07-01

    In this work the CO{sub 2} capture-desorption characteristics in Mg oxides doped with Fe and Ni obtained by the direct oxidation of Mg-Ni and Mg-Fe mixtures are presented. Mixtures of Mg-Ni and Mg-Fe in a different composition were obtained by mechanical milling in a Spex-type mill in a controlled atmosphere of ultra high purity argon at a weight / weight ratio of 4:1 powder using methanol as a lubricating agent, for 20 h. The powders obtained by mechanical milling showed as main phase, the Mg with nanocrystalline structure. Subsequently, the mixtures of Mg-Ni and Mg-Fe were oxidized within a muffle for 10 min at 600 degrees Celsius. By means of X-ray diffraction analysis, the Mg O with nano metric grain size was identified as the main phase, which was determined by the Scherrer equation. In the Mg O doped with Ni, was identified that as the Ni amount 1 to 5% by weight dispersed in the Mg O matrix was increased, the main peak intensity of the Ni phase increased, whereas in the Mg O doped with Fe was observed by XRD, that the Fe{sub 2}O{sub 3} phase was present and by increasing the amount of Fe (1 to 5% by weight) dispersed in the crystalline phase of Mg O, the intensity of this impurity also increased. Sem-EDS analysis showed that the Ni and Fe particles are dispersed homogeneously in the Mg O matrix, and the particles are porous, forming agglomerates. Through energy dispersive spectroscopy analysis, the elemental chemical composition obtained is very close to the theoretical composition. The capture of CO{sub 2} in the Mg O-1% Ni was carried out in a Parr reactor at different conditions of pressure, temperature and reaction time. Was determined that under the pressure of 0.2 MPa at 26 degrees Celsius for 1 h of reaction, the highest CO{sub 2} capture of 7.04% by weight was obtained, while in Mg O-1% Fe the CO{sub 2} capture was 6.32% by weight. The other magnesium oxides doped in 2.5 and 5% by weight Ni and Fe showed lower CO{sub 2} capture. The different stages

  17. Physical Characteristics and Sintering Behavior of MgO-Doped ZrO2nanoparticles

    International Nuclear Information System (INIS)

    Muccillo, E.N.S.; Tadokoro, S.K.; Muccillo, R.

    2004-01-01

    Nanosized particles of 13mol% MgO-doped ZrO 2 with a narrow distribution of pore sizes were prepared by the coprecipitation technique using optimized parameters of synthesis. Transmission electron microscopy analysis of the calcined powder reveals that the majority of the particles have grain sizes in the 10-20nm range. From nitrogen adsorption analysis an average particle size of 13nm was estimated, which is similar to the average pore size diameter (12nm). Besides the unimodal distribution of pore sizes, the linear shrinkage curve of a powder compact exhibits several inflexions indicating different rates of densification up to 1600 deg. C. After sintering at 1600 deg. C for 2h, the microstructure features of a compact are characteristics of the intermediate stage with interconnected porosity preferentially observed at grain boundaries. These results are explained as a size effect of nanoparticles of magnesia-doped zirconia during sintering

  18. Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

    International Nuclear Information System (INIS)

    Mishra, Vijay Kumar; Bhattacharjee, Birendra Nath; Parkash, Om; Kumar, Devendra; Rai, Shyam Bahadur

    2014-01-01

    Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO 3 ) 2 ⋅4H 2 O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ⋅6H 2 O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH 2 PO 4 ⋅2H 2 O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized structurally using X-ray diffraction and

  19. Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Vijay Kumar [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India); Bhattacharjee, Birendra Nath; Parkash, Om [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kumar, Devendra, E-mail: devendra.cer@iitbhu.ac.in [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rai, Shyam Bahadur, E-mail: sbrai49@yahoo.co.in [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India)

    2014-11-25

    Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO{sub 3}){sub 2}⋅4H{sub 2}O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO{sub 3}){sub 2}⋅6H{sub 2}O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH{sub 2}PO{sub 4}⋅2H{sub 2}O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized

  20. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  1. Synthesis and Characterization of Mg-doped ZnO Nanorods for Biomedical Applications

    Science.gov (United States)

    Gemar, H.; Das, N. C.; Wanekaya, A.; Delong, R.; Ghosh, K.

    2013-03-01

    Nanomaterials research has become a major attraction in the field of advanced materials research in the area of Physics, Chemistry, and Materials Science. Bio-compatible and chemically stable metal nanoparticles have biomedical applications that includes drug delivery, cell and DNA separation, gene cloning, magnetic resonance imaging (MRI). This research is aimed at the fabrication and characterization of Mg-doped ZnO nanorods. Hydrothermal synthesis of undoped ZnO and Mg-doped ZnO nanorods is carried out using aqueous solutions of Zn(NO3)2 .6H2O, MgSO4, and using NH4OH as hydrolytic catalyst. Nanomaterials of different sizes and shapes were synthesized by varying the process parameters such as molarity (0.15M, 0.3M, 0.5M) and pH (8-11) of the precursors, growth temperature (130°C), and annealing time during the hydrothermal Process. Structural, morphological, and optical properties are studied using various techniques such as XRD, SEM, UV-vis and PL spectroscopy. Detailed structural, and optical properties will be discussed in this presentation. This work is partially supported by National Cancer Institute (1 R15 CA139390-01).

  2. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

    Science.gov (United States)

    Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

    2018-04-01

    The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

  3. Synthesis, structure, magnetic, electrical and electrochemical properties of Al, Cu and Mg doped MnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hashem, Ahmed M., E-mail: ahmedh242@yahoo.com [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Abuzeid, Hanaa M. [National Research Centre, Inorganic Chemistry Department, Behoes St., Dokki, Cairo (Egypt); Narayanan, N. [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Ehrenberg, Helmut [Institute for Complex Materials, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, D-64287 Darmstadt (Germany); Julien, C.M. [Universite Pierre et Marie Curie, Physicochimie des Electrolytes, Colloides et Sciences Analytiques (PECSA), 4 place Jussieu, 75005 Paris (France)

    2011-10-17

    Highlights: {yields} Al, Mg and Cu doped MnO{sub 2} as cathode in Li-ion batteries. {yields} Pure phase MnO{sub 2} for virgin and doped MnO{sub 2} were obtained. {yields} Doping elements improve the electrical conductivity of MnO{sub 2}. {yields} Electrochemical behaviour of MnO{sub 2} improved after doping by Al, Mg and Cu. - Abstract: Pure and doped manganese dioxides were prepared by wet-chemical method using fumaric acid and potassium permanganate as raw materials. X-ray diffraction patterns show that pure and Al, Cu and Mg doped manganese dioxides (d-MnO{sub 2}) crystallized in the cryptomelane-MnO{sub 2} structure. Thermal analysis show that, with the assistance of potassium ions inside the 2 x 2 tunnel, the presence of Al, Cu and Mg doping elements increases the thermal stability of d-MnO{sub 2}. The electrical conductivity of d-MnO{sub 2} increases in comparison with pure MnO{sub 2}, while Al-doped MnO{sub 2} exhibits the lower resistivity. As shown in the magnetic measurements, the value of the experimental effective magnetic moment of Mn ions decreases with introduction of dopants, which is attributed to the presence of a mixed valency of high-spin state Mn{sup 4+}/Mn{sup 3+}. Doped MnO{sub 2} materials show good capacity retention in comparison with virgin MnO{sub 2}. Al-doped MnO{sub 2} shows the best electrochemical results in terms of capacity retention and recharge efficiency.

  4. Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

    Energy Technology Data Exchange (ETDEWEB)

    Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

    2003-05-15

    We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

  5. Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    International Nuclear Information System (INIS)

    Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

    2013-01-01

    Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

  6. Influences of Mg Doping on the Electrochemical Performance of TiO2 Nanodots Based Biosensor Electrodes

    Directory of Open Access Journals (Sweden)

    M. S. H. Al-Furjan

    2014-01-01

    Full Text Available Electrochemical biosensors are essential for health monitors to help in diagnosis and detection of diseases. Enzyme adsorptions on biosensor electrodes and direct electron transfer between them have been recognized as key factors to affect biosensor performance. TiO2 has a good protein adsorption ability and facilitates having more enzyme adsorption and better electron transfer. In this work, Mg ions are introduced into TiO2 nanodots in order to further improve electrode performance because Mg ions are considered to have good affinity with proteins or enzymes. Mg doped TiO2 nanodots on Ti substrates were prepared by spin-coating and calcining. The effects of Mg doping on the nanodots morphology and performance of the electrodes were investigated. The density and size of TiO2 nanodots were obviously changed with Mg doping. The sensitivity of 2% Mg doped TiO2 nanodots based biosensor electrode increased to 1377.64 from 897.8 µA mM−1 cm−2 and its KMapp decreases to 0.83 from 1.27 mM, implying that the enzyme achieves higher catalytic efficiency due to better affinity of the enzyme with the Mg doped TiO2. The present work could provide an alternative to improve biosensor performances.

  7. Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

    Science.gov (United States)

    Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

    2018-02-01

    Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  8. Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

    Directory of Open Access Journals (Sweden)

    Xiaoyu Bi

    2018-02-01

    Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  9. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Manzo, Michele; Gallo, Katia, E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2016-03-21

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  10. Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys.

    Science.gov (United States)

    Park, Ji-Sang; Chang, K J

    2013-06-19

    We perform first-principles density functional calculations to investigate the effect of Al and In on the formation energy and acceptor level of Mg in group-III nitride alloys. Our calculations reveal a tendency for the Mg dopants to prefer to occupy the lattice sites surrounded with Al atoms, whereas hole carriers are generated in In- or Ga-rich sites. The separation of the Mg dopants and hole carriers is energetically more favourable than a random distribution of dopants, being attributed to the local bonding effect of weak In and strong Al potentials in alloys. As a consequence, the Mg acceptor level, which represents the activation energy of Mg, tends to decrease with increasing numbers of Al next-nearest neighbours, whereas it increases as the number of In next-nearest neighbours increases. Based on the results, we suggest that the incorporation of higher Al and lower In compositions will improve the p-type doping efficiency in quaternary alloys, in comparison with GaN or AlGaN ternary alloys with similar band gaps.

  11. Protons in neutron-irradiated and thermochemically reduced MgO crystals doped with lithium impurities

    International Nuclear Information System (INIS)

    Gonzalez, R.; Pareja, R.; Chen, Y.

    1992-01-01

    H - (hydride) ions have been observed in lithium-doped MgO crystals which have been neutron irradiated or thermochemically reduced (TCR). Infrared-absorption measurements have been used to identify the local modes of the H - ions in these crystals. The concentration of the H - ions in the neutron-irradiated crystals is found to be far less than that found in the TCR crystals. The thermal stability of H - and oxygen vacancies in both oxidizing and reducing atmospheres are investigated. The emergence of sharp structures due to OH - ions is attributed to the displacements of substitutional Li + ions, leaving behind unperturbed OH - ions, via a mechanism of rapid radiation-induced diffusion during irradiation in a reactor. Results of neutron-irradiated MgO:Li, which had previously been oxidized at high temperature, are also presented

  12. Doping-Induced Isotopic Mg11B2 Bulk Superconductor for Fusion Application

    Directory of Open Access Journals (Sweden)

    Qi Cai

    2017-03-01

    Full Text Available Superconducting wires are widely used for fabricating magnetic coils in fusion reactors. Superconducting magnet system represents a key determinant of the thermal efficiency and the construction/operating costs of such a reactor. In consideration of the stability of 11B against fast neutron irradiation and its lower induced radioactivation properties, MgB2 superconductor with 11B serving as the boron source is an alternative candidate for use in fusion reactors with a severe high neutron flux environment. In the present work, the glycine-doped Mg11B2 bulk superconductor was synthesized from isotopic 11B powder to enhance the high field properties. The critical current density was enhanced (103 A·cm−2 at 20 K and 5 T over the entire field in contrast with the sample prepared from natural boron.

  13. Development and characterization of Mn2+-doped MgO nanoparticles by solution combustion synthesis

    Science.gov (United States)

    Basha, Md. Hussain; Gopal, N. O.; Rao, J. L.; Nagabhushana, H.; Nagabhushana, B. M.; Chakradhar, R. P. S.

    2015-06-01

    Mn doped MgO Nanoparticles have been prepared by Solution Combustion Synthesis. The synthesized sample is characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Electron Paramagnetic Resonance (EPR). The prepared MgO:Mn (1 mol%) nano crystals appear to be of simple cubic crystalline phase with lattice parameters a = 4.218(2) Å and cell volume = 74.98 (7) Å3. SEM micrograph of powders show highly porous, many agglomerates with irregular morphology, large voids, cracks and pores. EPR spectrum of the sample at room temperature exhibit an isotropic sextet hyperfine pattern, centered at g=1.99, characteristic if Mn2+ ions with S=I=5/2.The observed g value and the hyperfine value reveal the ionic bonding between Mn2+ and its surroundings.

  14. Development and characterization of Mn2+-doped MgO nanoparticles by solution combustion synthesis

    International Nuclear Information System (INIS)

    Basha, Md. Hussain; Gopal, N. O.; Rao, J. L.; Nagabhushana, H.; Nagabhushana, B. M.; Chakradhar, R. P. S.

    2015-01-01

    Mn doped MgO Nanoparticles have been prepared by Solution Combustion Synthesis. The synthesized sample is characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Electron Paramagnetic Resonance (EPR). The prepared MgO:Mn (1 mol%) nano crystals appear to be of simple cubic crystalline phase with lattice parameters a = 4.218(2) Å and cell volume = 74.98 (7) Å 3 . SEM micrograph of powders show highly porous, many agglomerates with irregular morphology, large voids, cracks and pores. EPR spectrum of the sample at room temperature exhibit an isotropic sextet hyperfine pattern, centered at g=1.99, characteristic if Mn 2+ ions with S=I=5/2.The observed g value and the hyperfine value reveal the ionic bonding between Mn 2+ and its surroundings

  15. Mg Doping Effect on the Microstructural and Optical Properties of ZnO Nanocrystalline Films

    Directory of Open Access Journals (Sweden)

    San-Lin Young

    2015-01-01

    Full Text Available Transparent Zn1-xMgxO (x=0.01, 0.03, and 0.05 nanocrystalline films were prepared by sol-gel method followed by thermal annealing treatment of 700°C. Mg doping effect on the microstructural and optical properties of the Zn1-xMgxO films is investigated. From SEM images of all films, mean sizes of uniform spherical grains increase progressively. Pure wurtzite structure is obtained from the results of XRD. Grain sizes increase from 34.7 nm for x=0.01 and 37.9 nm for x=0.03 to 42.1 nm for x=0.05 deduced from the XRD patterns. The photoluminescence spectra of the films show a strong ultraviolet emission and a weak visible light emission peak. The enhancement of ultraviolet emission and reduction of visible emission are observed due to the increase of Mg doping concentration and the corresponding decrease of oxygen vacancy defects. Besides, the characteristics of the dark/photo currents with n-Zn1-xMgxO/n-Si heterojunction are studied for photodetector application.

  16. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar; Vovusha, Hakkim; Sanyal, Biplab

    2016-01-01

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable

  17. An innovative technique to synthesize C-doped MgB2 by using chitosan as the carbon source

    International Nuclear Information System (INIS)

    Bovone, G; Kawale, S; Siri, A S; Vignolo, M; Bernini, C

    2014-01-01

    Here, we report a new technique to synthesize carbon-doped MgB 2 powder. Chitosan was innovatively used as the carbon source during the synthesis of boron from boron oxide. This allowed the introduction of local defects, which later on served as pinning centers in MgB 2 , in the boron lattice itself, avoiding the traditional and time consuming ways of ex situ MgB 2 doping (e.g. ball milling). Two volume percentages of C-doping have been tried and its effect on the superconducting properties, evaluated by magnetic and transport measurements, are discussed here. Morphological analysis by scanning electron microscopy revealed nano-metric grains’ distribution in the boron and MgB 2 powder. Mono-filamentary MgB 2 wires have been fabricated by an ex situ powder-in-tube technique by using the thus prepared carbon-doped MgB 2 and pure MgB 2 powders. Transport property measurements on these wires were made and compared with MgB 2 wire produced using commercial boron. (fast track communication)

  18. Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

    International Nuclear Information System (INIS)

    Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

    2013-01-01

    Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

  19. Biocompatibility of Mg Ion Doped Hydroxyapatite Films on Ti-6Al-4V Surface by Electrochemical Deposition.

    Science.gov (United States)

    Lee, Kang; Choe, Han-Cheol

    2016-02-01

    In this study, we prepared magnesium (Mg) doped nano-phase hydroxyapatite (HAp) films on the TiO2 nano-network surface using electrochemical deposition method. Ti-6Al-4V ELI surface was anodized in 5 M NaOH solution at 0.3 A for 10 min. Nano-network TiO2 surface were formed by these anodization steps which acted as templates and anchorage for growth of the Mg doped HAp during subsequent pulsed electrochemical deposition process at 85 degrees C. The phase and morphologies of HAp deposits were influenced by the Mg ion concentration.

  20. Adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO surface

    KAUST Repository

    Yadav, Manoj Kumar

    2016-06-16

    The adsorption and dissociation of dinitrogen on transition metal (Ta, W and Re) doped MgO(100) surface has been studied employing density functional theory. It is found that all these transition metals (TM) on MgO(100) surface are capable of adsorbing dinitrogen (N2), however there is no dissociative adsorption of N2 on single transition metal dopant. When two TM atoms are doped on MgO(100) surface, dissociative adsorption of dinitrogen occurs in all the three cases. Whether the dissociation is spontaneous or is it associated with activation barrier depends on the orientation of N2 molecule approaching the dopant site.

  1. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  2. Structural and magnetic properties of Mg doped YbMnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Sattibabu, Bhumireddi, E-mail: bsb.satti@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Bhatnagar, Anil K., E-mail: anilb42@gmail.com [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Hyderabad 500046 (India); Rayaprol, Sudhindra [UGC-DAE CSR, Mumbai Centre, R-5 Shed, BARC, Mumbai 400085 (India); Mohan, Dasari; Das, Dibakar; Sundararaman, Mahadevan [School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad 500046 (India); Siruguri, Vasudeva [UGC-DAE CSR, Mumbai Centre, R-5 Shed, BARC, Mumbai 400085 (India)

    2014-09-01

    We have studied the effect of Mg doping on structure and magnetism of multiferroic YbMnO{sub 3}. Room temperature neutron diffraction studies were carried out on polycrystalline Yb{sub 1−x}Mg{sub x}MnO{sub 3} (x=0.00 and 0.05) samples to determine phase formation as well as cation distribution and structural properties such as bond length and bond angles. The structural analysis shows that with Mg substitution, there is a marginal change in a and c parameters of the hexagonal unit cell, c/a ratio remains constant for x=0 and 0.05 samples. Due to changes in bond angle and bond lengths on substituting Mg, there is a slight decrease in the distortion of MnO{sub 5} polyhedra. Magnetic measurements show that the Néel temperature (T{sub N}) increases marginally from 85 K for x=0.00 to 89 K for x=0.05 sample.

  3. Effects of TiC doping on the upper critical field of MgB2 superconductors

    International Nuclear Information System (INIS)

    Yan, S.C.; Zhou, L.; Yan, G.; Lu, Y.F.

    2008-01-01

    TiC doped MgB 2 bulks were fabricated by two-step reaction method. The sample with a nominal compositions of Mg(B 0.95 (TiC) 0.05 ) 4 was first sintered at 1000 deg. C for 0.5 h. An appropriate amount of Mg was added to reach the stoichiometry of Mg(B 0.95 (TiC) 0.05 ) 2 , which was sintered at 750 deg. C for 2 h. The H c2 for the micro-TiC doped MgB 2 reached 12 T at 20 K. And J c is 5.3 x 10 4 A/cm 2 at 20 K and 1 T. The results indicate that the two-step reaction method could effectively introduce the carbon in TiC into the MgB 2 crystalline lattice, and therefore improve the upper critical field

  4. Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Glaser, E.R.; Murthy, M.; Freitas, J.A.; Storm, D.F.; Zhou, L.; Smith, D.J.

    2007-01-01

    Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (10 17 -10 20 cm -3 ) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3x10 18 cm -3 , the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1x10 17 cm -3 revealed the first evidence for the highly anisotropic g-tensor (g parallel ∼2.19, g perpendicular ∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5x10 6 cm -3 ) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers

  5. Insight into destabilization mechanism of Mg-based hydrides interstitially co-doped with nonmetals: a DFT study

    Science.gov (United States)

    Wu, Zhen; Zhu, Luying; Yang, Fusheng; Zhang, Zaoxiao; Nyamsi, Serge N.

    2018-04-01

    Mg-based metal hydride is one of the most promising materials for hydrogen energy storage. However, the high thermal stability due to strong bonding effects between the atoms limits its practical application. In order to reduce the thermal stability, a method of doping double nonmetals into Mg-based system was proposed in this study. The density functional theory (DFT) calculation results showed that the thermal stabilities of both the B-N co-doped Mg-based alloy and its hydride are reduced compared with pure Mg-based system. The relative formation enthalpies of the alloy and its hydride are 0.323 and 0.595 eV atom-1, respectively. The values are much higher than those for either singly B- or N-doped Mg-based system. The more significant destabilization by doping double nonmetal elements than single element is mainly attributed to a dual effect in weakening Mg-Ni/NiH4 bonds, caused by criss-cross interactions between B-Ni and N-Mg bonds.

  6. Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2008-07-01

    We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

    2018-06-01

    In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

  8. Density functional theory study of hydrogenation mechanism in Fe-doped Mg(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Wu Guangxin; Zhang Jieyu; Wu Yongquan; Li Qian; Chou Kuochih; Bao Xinhua

    2009-01-01

    Using density functional theory (DFT) in combination with nudged elastic band (NEB) method, the dissociative chemisorptions and diffusion processes of hydrogen on both pure and Fe-doped Mg(0 0 0 1) surfaces are studied. Firstly, the dissociation pathway of H 2 and the relative barrier were investigated. The calculated dissociation barrier (1.08 eV) of hydrogen molecule on a pure Mg(0 0 0 1) surface is in good agreement with comparable experimental and theoretical studies. For the Fe-doped Mg(0 0 0 1) surface, the activated barrier decreases to 0.101 eV due to the strong interaction between the s orbital of H and the d orbital of Fe. Then, the diffusion processes of atomic hydrogen on pure and Fe-doped Mg(0 0 0 1) are presented. The obtained diffusion barrier to the first subsurface is 0.45 eV and 0.98 eV, respectively. Finally, Chou method was used to investigate the hydrogen sorption kinetic mechanism of pure MgH 2 and Mg mixed with 5 at.% Fe atoms composites. The obtained activation energies are 0.87 ± 0.02 and 0.31 ± 0.01 eV for H 2 dissociation on the pure surface and H atom diffusion in Fe-doped Mg surfaces, respectively. It suggests that the rate-controlling step is dissociation of H 2 on the pure Mg surface while it is diffusion of H atom in the Fe-doped Mg surface. And both of fitting data are matching well with our calculation results.

  9. Mesoporous nitrogen-doped carbon microfibers derived from Mg-biquinoline-dicarboxy compound for efficient oxygen electroreduction

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Aiguo, E-mail: agkong@chem.ecnu.edu.cn [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China); Fan, Xiaohong; Chen, Aoling [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China); Zhang, Hengiang [School of Chemistry and Chemical Engineering, Hebei Normal University for Nationalities, Chengde 067000 (China); Shan, Yongkui, E-mail: agkong@chem.ecnu.edu.cn [School of Chemistry and Molecular Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241 (China)

    2017-02-15

    An in-situ MgO-templating synthesis route was introduced to obtain the mesoporous nitrogen-doped carbon microfibers by thermal conversion of new Mg-2,2′-biquinoline 4,4-dicarboxy acid coordination compound (Mg-DCA) microfibers. The investigated crystal structure of Mg-DCA testified that the assembling of Mg{sup 2+} and DCA through Mg-O coordination bond and hydrogen bond contributed to the formation of one-dimensional (1D) crystalline Mg-DCA microfibers. The nitrogen-doped carbons derived from the pyrolysis of Mg-DCA showed the well-defined microfiber morphology with high mesopore-surface area. Such mesoporous microfibers exhibited the efficient catalytic activity for oxygen reduction reaction (ORR) in alkaline solutions with better stability and methanol-tolerance performance. - Graphical abstract: Mesoporous nitrogen-doped carbon microfibers with efficient oxygen electroreduction activity were prepared by thermal conversion of new Mg-biquinoline-based coordination compound microfibers.

  10. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

    2015-01-01

    Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

  11. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB{sub 2} superconductor nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koc University, RumelifeneriYolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej; Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, 79104 Freiburg (Germany); Acar, Selcuk; Kokal, Ilkin [Pavezyum Kimya Sanayi Dış Ticaret LTD. ŞTI., Tuzla, Istanbul (Turkey); Häßler, Wolfgang [Leibniz Institute for Solid State and Materials Research Dresden (IFW), P.O. Box 270116, 01171 Dresden (Germany)

    2015-04-21

    Undoped and carbon-doped magnesium diboride (MgB{sub 2}) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp{sup 3}-hybridized carbon radicals were detected. A strong reduction in the critical temperature T{sub c} was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra.

  12. Ionic conductivity and fuel cell properties of apatite-type lanthanum silicates doped with Mg and containing excess oxide ions

    Energy Technology Data Exchange (ETDEWEB)

    Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira-cho, Suma-ku, Kobe 654-0037 (Japan); Nojiri, Yoshihiro [Kyushu University, Department of Mechanical Engineering Science, Faculty of Engineering, Motooka 744, Nishi-ku, Fukuoka 819-0935 (Japan); Tanase, Shigeo [National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

    2008-11-30

    Enhancement of the ionic conductivity of lanthanum silicate-based apatites is examined with emphasis on optimizing the La composition and the Mg doping level at the same time. La{sub 10}Si{sub 5.8}Mg{sub 0.2}O{sub 26.8} and La{sub 9.8}Si{sub 5.7}Mg{sub 0.3}O{sub 26.4} show the highest level of the ionic conductivities among apatite silicates, 8.8 and 7.4 x 10{sup -} {sup 2} S cm{sup -} {sup 1} at 800 C, respectively, with a very low level of activation energy (0.42-0.43 eV). Their conductivities are higher than yttria stabilized zirconia (YSZ) below 900 C and even comparable to Sr and Mg doped lanthanum gallate (LSGM) below 550 C. A solid oxide fuel cell using La{sub 9.8}Si{sub 5.7}Mg{sub 0.3}O{sub 26.4} as an electrolyte with Ni-ceria cermet anode and Sr doped lanthanum cobaltite cathode exhibits a remarkable improvement in power generation compared to previous data using Pt electrodes. Structural investigation by the Rietveld analysis on the powder X-ray diffraction pattern shows significant enlargement of the bottleneck triangle sizes of the conduction channel with the Mg doping. (author)

  13. Manipulation of inherent characteristics of graphene through N and Mg atom co-doping; a DFT study

    Science.gov (United States)

    Rafique, Muhammad; Mirjat, Nayyar H.; Soomro, Aamir M.; Khokhar, Suhail; Shuai, Yong

    2018-04-01

    First-principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of nitrogen (N) and magnesium (Mg) atom co-doped graphene systems. We observed that, N and Mg atom co-doping in graphene, introduces half-metallic properties in the electronic structure of graphene, introduces ferromagnetism behavior along with new trends in optical properties of graphene. Doping site and concentration of N and Mg atoms in graphene was changed and resulting effects of these changes on aforementioned properties were investigated. Through density of states plots we observed that, Mg atom sp orbitals mainly induced magnetic moments in graphene. It was revealed that, N/Mg atoms substitution in graphene introduces a red shift in absorption spectrum towards visible range and a finite absorption coefficient quantity value in 0 to 3 eV and 7 to 11 eV energy intervals is also produced, that is unavailable for absorption spectrum of intrinsic graphene. Moreover, N/Mg atoms co-doping produces increment in the reflectivity parameter of graphene in low lying energy region, while producing diminishing behavior in the higher energy range. These results offer a possibility to tune electronic, magnetic and optical characteristics of graphene sufficiently for utilization in graphene based spintronic and optoelectronic devices.

  14. TL and OSL properties of Mn2+-doped MgGa2O4 phosphor

    Science.gov (United States)

    Luchechko, A.; Zhydachevskyy, Ya; Maraba, D.; Bulur, E.; Ubizskii, S.; Kravets, O.

    2018-04-01

    The oxide MgGa2O4 spinel ceramics doped with Mn2+ ions was synthesized by a solid-state reaction at 1200 °C in air. The activator concentration was equal 0.05 mol% of MnO. Phase purity of the synthesized samples was analyzed by X-ray diffraction technique. This spinel ceramics show efficient green emission in the range from 470 to 550 nm with a maximum at about 505 nm under UV or X-ray excitations, which is due to Mn2+ ions. MgGa2O4: Mn2+ exhibits intense thermoluminescence (TL) and optically stimulated luminescence (OSL) after influence of ionizing radiation. Are complex nature of the TL glow curves is associated with a significant number of structural defects that are responsible for the formation of shallow and deep electron traps. In this work, time-resolved OSL characteristics of the samples exposed to beta particles are reported for the first time. A light from green LED was used for optical stimulation. Obtained TL and OSL results suggest MgGa2O4:Mn2+ as perspective material for further research and possible application in radiation dosimetry.

  15. Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Strelcov, Evgheni; Kravchenko, Ivan I.; Kalinin, Sergei V. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia [Department of Applied Physics, KTH - Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-28

    Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity.

  16. Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate

    International Nuclear Information System (INIS)

    Neumayer, Sabine M.; Rodriguez, Brian J.; Strelcov, Evgheni; Kravchenko, Ivan I.; Kalinin, Sergei V.; Manzo, Michele; Gallo, Katia; Kholkin, Andrei L.

    2015-01-01

    Mg doped lithium niobate (Mg:LN) exhibits several advantages over undoped LN such as resistance to photorefraction, lower coercive fields, and p-type conductivity that is particularly pronounced at domain walls and opens up a range of applications, e.g., in domain wall electronics. Engineering of precise domain patterns necessitates well founded knowledge of switching kinetics, which can differ significantly from that of undoped LN. In this work, the role of humidity and sample composition in polarization reversal has been investigated under application of the same voltage waveform. Control over domain sizes has been achieved by varying the sample thickness and initial polarization as well as atmospheric conditions. In addition, local introduction of proton exchanged phases allows for inhibition of domain nucleation or destabilization, which can be utilized to modify domain patterns. Polarization dependent current flow, attributed to charged domain walls and band bending, demonstrates the rectifying ability of Mg:LN in combination with suitable metal electrodes that allow for further tailoring of conductivity

  17. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  18. Structural phase analysis and photoluminescence properties of Mg-doped TiO2 nanoparticles

    Science.gov (United States)

    Ali, T.; Ashraf, M. Anas; Ali, S. Asad; Ahmed, Ateeq; Tripathi, P.

    2018-05-01

    In this paper, we report the synthesis, characterization and photoluminescence properties of Mg-doped TiO2 nanoparticles (NPs). The samples were synthesized by sol-gel method and characterized using the standard analytical techniques such as X-ray diffraction (XRD), Transmission electron microscope (TEM), Energy dispersive X-ray spectroscopy (EDX), UV-visible and photoluminescence spectroscopy. The powder XRD spectra revealed that the synthesized samples are pure and crystalline in nature and showing tetragonal anatase phase of TiO2 NPs. UV-visible spectrum illustrates that an absorption edge shifts toward the visible region. This study may provide a new insight for making the nanomaterials which can be used in photocatalytic applications.

  19. Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

    2014-02-15

    Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

  20. The effect of citric and oxalic acid doping on the superconducting properties of MgB2

    International Nuclear Information System (INIS)

    Ojha, N; Singla, Rashmi; Varma, G D; Malik, V K; Bernhard, C

    2009-01-01

    In this paper we report the effect of carbon doping on the structural and superconducting properties of MgB 2 using citric and oxalic acids as carbon sources. The bulk polycrystalline samples have been synthesized via a standard solid state reaction route with composition MgB 2 +x wt% of citric and oxalic acids (x = 0, 5 and 10). The x-ray diffraction results reveal the formation of dominantly MgB 2 with only a small amount of impurity phase MgO and substitution of C at the B site of MgB 2 for both dopants. Improvements in the upper critical field (H C2 ), irreversibility field (H irr ) and high field (>2.5 T) critical current density (J C ) have been observed on C doping in the samples. The correlations between superconducting properties and structural characteristics of the samples are described and discussed in this paper.

  1. Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

    International Nuclear Information System (INIS)

    Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

    2010-01-01

    The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

  2. Effect of Mg-doping on the degradation of LiNiO2-based cathode materials by combined spectroscopic methods

    OpenAIRE

    Muto, Shunsuke; Tatsumi, Kazuyoshi; Kojima, Yuji; Oka, Hideaki; Kondo, Hiroki; Horibuchi, Kayo; Ukyo, Yoshio

    2012-01-01

    The performance of a LiNiO2-based cell has been shown to be significantly improved by Mg-doping of LiNi0.8Co0.15Al0.05O2 (Mg-doped NCA) cathode materials. In the present study, the effects of Mg-doping were examined by electrochemical impedance spectroscopy (EIS) and scanning transmission electron microscopy-electron energy loss spectroscopy. EIS analysis revealed that the activation energy of Mg-doped NCA for the charge-transfer reaction was larger than that of undoped NCA by a factor of ∼10...

  3. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    International Nuclear Information System (INIS)

    Marzik, James V.

    2012-01-01

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl 3 in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB 2 wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J c , in excess of 10 5 A cm -2 at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H c2 (0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T c in carbon-doped MgB 2 powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB 2 superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant chemistry and concentration, wire

  4. Band gap tuning of ZnO nanoparticles via Mg doping by femtosecond laser ablation in liquid environment

    International Nuclear Information System (INIS)

    Chelnokov, E.; Rivoal, M.; Colignon, Y.; Gachet, D.; Bekere, L.; Thibaudau, F.; Giorgio, S.; Khodorkovsky, V.; Marine, W.

    2012-01-01

    Highlights: ► Femtosecond laser ablation synthesis of Mg doped ZnO nanoparticles. ► Electronic properties of ZnO are modified by Mg. ► Band gap and exciton energy shifts to the blue. ► The exciton energy shift is saturated at Mg content of about 20%. ► Phase separation at Mg content is at more than 25%. ► Mechanism of exciton pinning – recombination via new surface states. - Abstract: We use multiphoton IR femtosecond laser ablation to induce non-thermal non-equilibrium conditions of the nanoparticle growth in liquids. Modifications of the electronic properties of ZnO NP were achieved by Mg ion doping of targets prepared from mixtures of Zn and Mg acetylacetonates. The nanoparticle sizes were 3–20 nm depending on the ablation conditions. X-ray fluorescence indicates that stoichiometric ablation and incorporation of Mg in nanocrystalline ZnO occurs. HRTEM observations show that nanoparticles retain their wurtzite structure, while at high Mg concentrations we detect the MgO rich domains. Exciton emissions exhibit relatively narrow bands with progressive and controlled blue shifts up to 184 meV. The exciton energy correlates to band edge absorption indicating strong modification of the NP band gaps. Stabilisation of the exciton blue shift is observed at high Mg concentration. It is accompanied by the formation of structure defects and ZnO/MgO phase separation within the nanoparticles.

  5. Comparison between nano-diamond and carbon nanotube doping effects on critical current density and flux pinning in MgB2

    International Nuclear Information System (INIS)

    Cheng, C H; Yang, Y; Munroe, P; Zhao, Y

    2007-01-01

    Doping effects of nano-diamond and carbon nanotubes (CNTs) on critical current density of bulk MgB 2 have been studied. CNTs are found prone to be doped into the MgB 2 lattice whereas nano-diamond tends to form second-phase inclusions in the MgB 2 matrix, leading to a more significant improvement of J c (H) by doping by nano-diamond than by CNTs in MgB 2 . TEM reveals tightly packed MgB 2 nanograins (50-100 nm) with a dense distribution of diamond nanoparticles (10-20 nm) inside MgB 2 grains in nano-diamond-doped samples. Such a unique microstructure leads to a flux pinning behaviour different from that in CNTs-doped MgB 2

  6. Mg- and/or Sr-doped tricalcium phosphate/bioactive glass composites: Synthesis, microstructure and biological responsiveness

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Devis, E-mail: devis.bellucci@unimore.it [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy); Sola, Antonella [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy); Cacciotti, Ilaria [University of Rome " Niccolò Cusano" , UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy); Bartoli, Cristina; Gazzarri, Matteo [Department of Chemistry and Industrial Chemistry, University of Pisa, UdR INSTM — Pisa, Via Risorgimento 35, 56127 Pisa (Italy); Bianco, Alessandra [Department of Enterprise Engineering, INSTM RU “Rome-Tor Vergata”, Via del Politecnico 1, 00133 Roma (Italy); Chiellini, Federica [Department of Chemistry and Industrial Chemistry, University of Pisa, UdR INSTM — Pisa, Via Risorgimento 35, 56127 Pisa (Italy); Cannillo, Valeria [Department of Engineering “E. Ferrari”, University of Modena and Reggio Emilia, Via Vignolese 905, 41125 Modena (Italy)

    2014-09-01

    Presently, there is an increasing interest towards the composites of calcium phosphates, especially β-tricalcium phosphate (TCP), and bioactive glasses. In the present contribution, the recently developed BG{sub C}a/Mix glass has been used because its low tendency to crystallize allows to sinter the composites at relatively low temperature (i.e. 850 °C), thus minimizing the glass devitrification and the interaction with TCP. A further improvement is the introduction of lab-produced TCP powders doped with specific ions instead of non-doped commercial powders, since the biological properties of materials for bone replacement can be modulated by doping them with certain metallic ions, such as Mg and Sr. Therefore, novel binary composites have been produced by sintering the BG{sub C}a/Mix glass with the addition of pure, Mg-substituted, Sr-substituted or Mg/Sr bisubstituted TCP powders. After an accurate characterization of the starting TCP powders and of the obtained samples, the composites have been used as three-dimensional supports for the culture of mouse calvaria-derived pre-osteoblastic cells. The samples supported cell adhesion and proliferation and induced promising mechanisms of differentiation towards an osteoblastic phenotype. In particular, the Mg/Sr bi-doped samples seemed to better promote the differentiation process thus suggesting a combined stimulatory effect of Mg{sup 2+} and Sr{sup 2+} ions.

  7. Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

    Science.gov (United States)

    Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

    2013-05-28

    This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

  8. Mg- and/or Sr-doped tricalcium phosphate/bioactive glass composites: Synthesis, microstructure and biological responsiveness

    International Nuclear Information System (INIS)

    Bellucci, Devis; Sola, Antonella; Niccolò Cusano, UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy))" data-affiliation=" (University of Rome Niccolò Cusano, UdR INSTM, Via Don Carlo Gnocchi 3, 00166, Rome (Italy))" >Cacciotti, Ilaria; Bartoli, Cristina; Gazzarri, Matteo; Bianco, Alessandra; Chiellini, Federica; Cannillo, Valeria

    2014-01-01

    Presently, there is an increasing interest towards the composites of calcium phosphates, especially β-tricalcium phosphate (TCP), and bioactive glasses. In the present contribution, the recently developed BG C a/Mix glass has been used because its low tendency to crystallize allows to sinter the composites at relatively low temperature (i.e. 850 °C), thus minimizing the glass devitrification and the interaction with TCP. A further improvement is the introduction of lab-produced TCP powders doped with specific ions instead of non-doped commercial powders, since the biological properties of materials for bone replacement can be modulated by doping them with certain metallic ions, such as Mg and Sr. Therefore, novel binary composites have been produced by sintering the BG C a/Mix glass with the addition of pure, Mg-substituted, Sr-substituted or Mg/Sr bisubstituted TCP powders. After an accurate characterization of the starting TCP powders and of the obtained samples, the composites have been used as three-dimensional supports for the culture of mouse calvaria-derived pre-osteoblastic cells. The samples supported cell adhesion and proliferation and induced promising mechanisms of differentiation towards an osteoblastic phenotype. In particular, the Mg/Sr bi-doped samples seemed to better promote the differentiation process thus suggesting a combined stimulatory effect of Mg 2+ and Sr 2+ ions

  9. Stacking faults and phase changes in Mg-doped InGaN grown on Si

    International Nuclear Information System (INIS)

    Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

    2009-01-01

    We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

    Science.gov (United States)

    Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

    2015-08-15

    We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

  11. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    Science.gov (United States)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  12. Magnetic properties of Mg12O12 nanocage doped with transition metal atoms (Mn, Fe, Co and Ni): DFT study

    Science.gov (United States)

    Javan, Masoud Bezi

    2015-07-01

    Binding energy of the Mg12O12 nanocage doped with transition metals (TM=Mn, Fe, Co and Ni) in endohedrally, exohedrally and substitutionally forms were studied using density functional theory with the generalized gradient approximation exchange-correlation functional along 6 different paths inside and outside of the Mg12O12 nanocage. The most stable structures were determined with full geometry optimization near the minimum of the binding energy curves of all the examined paths inside and outside of the Mg12O12 nanocage. The results reveal that for all stable structures, the Ni atom has a larger binding energy than the other TM atoms. It is also found that for all complexes additional peaks contributed by TM-3d, 4s and 4p states appear in the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) gap of the host MgO cluster. The mid-gap states are mainly due to the hybridization between TM-3d, 4s and 4p orbitals and the cage π orbitals. The magnetic moment of the endohedrally doped TM atoms in the Mg12O12 are preserved to some extent due to the interaction between the TM and Mg12O12 nanocage, in contrast to the completely quenched magnetic moment of the Fe and Ni atoms in the Mg11(TM)O12 complexes. Furthermore, charge population analysis shows that charge transfer occurs from TM atom to the cage for endohedrally and substitutionally doping.

  13. Synthesis of Sr- and Mg- doped lanthanum gallate by carbonate co-precipitation

    International Nuclear Information System (INIS)

    Sunitha, Y.; Narasimham, K.V.N.S.V.P.L.; Raju, V.S.; Kumar, Sanjiv

    2010-01-01

    Sr- and Mg- doped lanthanum gallate (LSGM) are promising electrolytes for low temperature solid oxide fuel cells (SOFCs) in view of their high ionic conductivity and stability over a wide range of oxygen partial pressures. LSGM powders are usually prepared by solid-state reactions. However high sintering temperature (∼ 1500 deg C) required for densification and the formation of secondary phases are the major drawbacks of the method. Wet-chemical method is a suitable alternative to solid-state synthesis with the prospect of the realisation of phase pure material with good sinterability at comparatively lower temperatures. In this paper we present the results of our investigation on the synthesis of LaGaO 3 and LSGM by a wet-chemical method through carbonate co-precipitation using ammonium carbonate and ammonium bicarbonate as precipitants. Phase and microstructural evolution of the material have been studied by XRD and SEM respectively, while compositional analysis has been performed by ion beam analysis (IBA) techniques. In addition we have also investigated the incorporation of Sr and Mg in the lattice of LaGaO 3 by (a) solid-state reaction route and (b) wet-chemical approach

  14. Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

    Directory of Open Access Journals (Sweden)

    K. Nadeem

    2015-04-01

    Full Text Available A comparison of structural and magnetic properties of as-prepared and annealed (900 °C Mg doped Zn ferrite nanoparticles (Zn1−xMgxFe2O4, with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5 is presented. X-ray diffraction (XRD studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.

  15. The charge transfer induced by Cr doping in MgB2

    International Nuclear Information System (INIS)

    Zhang Huarong; Zhao Jiyin; Shi Lei

    2005-01-01

    Mg 1-x Cr x B 2 polycrystal bulk samples with 0 x 5% have been synthesized by a solid-state reaction and studied by X-ray diffraction, SEM and Raman spectrum. It is found that the c-axis of the lattice decreases as the Cr content increases, while the a-axis remains unchanged. Moreover, crystal grain size increases apparently with Cr doping concentration increase. The normal-state resistivity increases and the superconducting transition temperature (T c ) decreases from 38.2 K (x = 0) to 35.1 K (x 0.03) with the increase of Cr content. It is suggested that the charge transfer between the Mg-layer and the B-layer causes the decrease of the charge carrier concentration and induces the changes of T c and normal-state resistivity. On the other hand, by the Raman scattering study, it is found that the linewidth of Raman spectrum increases with the increase of Cr content, which is resulted by the competition between the electron-phonon interaction and substitution-induced disorder. The Raman peak has no evident shift due to the countervailing between the effects of the electron-phonon coupling and the grain size

  16. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  17. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    International Nuclear Information System (INIS)

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  18. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  19. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  20. Li-doped MgO as catalysts for oxidative coupling of methane: A positron annihilation study

    Science.gov (United States)

    Dai, G. H.; Yan, Q. J.; Wang, Y.; Liu, Q. S.

    1991-08-01

    Magnesium oxides intentionally doped with lithium (with a maximum Li content of 40 tool%) for use as catalysts for oxidative coupling of methane were characterized by means of positron annihilation. The positron lifetime spectra, which could be reasonably well interpreted within the framework of the well-known trapping model, depend on the amount of Li doping of the MgO suggesting that positrons are trapped at dispersed small Li 2CO 3 precipitates. Very similar dependencies on lithium doping of the C 2 selectivity and the positron trapping rate ϰ imply an intimate relationship between the concentration of [Li] 0-centers (also referred to as [Li +O -] centers) and the selective activity of Li/MgO during catalytic reactions.

  1. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Toft Sørensen, O.

    1998-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a PO2 dependence according to R proportional to PO2-1/4 in the considered PO2 range(2.5 x 10(-5) bar

  2. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    International Nuclear Information System (INIS)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  3. Thermoluminescence responses of photon- and electron-irradiated lithium potassium borate co-doped with Cu+Mg or Ti+Mg

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ramli, A.T.; Saleh, M.A.; Saripan, M.I.; Alzimami, K.; Min Ung, Ngie

    2013-01-01

    New glasses Li 2 CO 3 –K 2 CO 3 –H 3 BO 3 (LKB) co-doped with CuO and MgO, or with TiO 2 and MgO, were synthesized by the chemical quenching technique. The thermoluminescence (TL) responses of LKB:Cu,Mg and LKB:Ti,Mg irradiated with 6 MV photons or 6 MeV electrons were compared in the dose range 0.5–4.0 Gy. The standard commercial dosimeter LiF:Mg,Ti (TLD-100) was used to calibrate the TL reader and as a reference in comparison of the TL properties of the new materials. The dependence of the responses of the new materials on 60 Co dose is linear in the range of 1–1000 Gy. The TL yields of both of the co-doped glasses and TLD-100 are greater for electron irradiation than for photon irradiation. The TL sensitivity of LKB:Ti,Mg is 1.3 times higher than the sensitivity of LKB:Cu,Mg and 12 times less than the sensitivity of TLD-100. The new TL dosimetric materials have low effective atomic numbers, good linearity of the dose responses, excellent signal reproducibility, and a simple glow curve structure. This combination of properties makes them suitable for radiation dosimetry. - Highlights: • Enhancement of about three times has been shown with the increment of MgO. • A comparison was carried out between the TL responses of the prepared dosimeters and TLD-100. • The prepared dosimeters show simple glow curve, low Z material and excellent reproducibility. • The TL measurements show a linear dose response in a long span of exposures. • The electron response shows 1.18 times greater than photon response for the prepared dosimeters

  4. First-principles study of hydrogen dissociation and diffusion on transition metal-doped Mg(0 0 0 1) surfaces

    International Nuclear Information System (INIS)

    Wang, Zhiwen; Guo, Xinjun; Wu, Mingyi; Sun, Qiang; Jia, Yu

    2014-01-01

    First-principles calculations within the density functional theory (DFT) have been carried out to study hydrogen molecules dissociation and diffusion on clean and transition metals (TMs) doped Mg(0 0 0 1) surfaces following Pozzo et al. work. Firstly, the stability of Mg(0 0 0 1) surface doped with transition metals atom has been studied. The results showed that transition metals on the left of the table tend to substitute Mg in the second layer, while the other transition metals prefer to substitute Mg in the first layer. Secondly, we studied hydrogen molecules dissociation and diffusion on clean and Mg(0 0 0 1) surfaces which the transition metal atoms substituted both in the first layer and second layer. When transition metal atoms substitute in the first layer, the results agree with the Pozzo et al. result; when transition metal atoms substitute in the second layer, the results showed that the transition metals on the left of the periodic table impact on the dissociation barriers is less. However, for the transition metals (Mn, Fe, Co, Ni) on the right, there is a great impact on the barriers. The transition metals doped surfaces bind the dissociated H atoms loosely, making them easily diffused. The results further reveal that the Fe dopant on the Mg surface is the best choice for H 2 dissociation and hydrogen storage.

  5. Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chih-Hung; Chung, Hantsun [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Jian-Zhang, E-mail: jchen@ntu.edu.tw [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Cheng, I-Chun, E-mail: iccheng@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-11-03

    Rf-sputtered Mg{sub 0.05}Zn{sub 0.95}O thin films become amorphous/nanocrystalline with the addition of hafnium oxide. All films (thickness: ∼ 100 nm) sputter-deposited from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets are highly transparent (> 80%) from 400 to 800 nm. The Tauc bandgap ΔE (eV) increases with the Hf content. However, the bandgap decreases after thermal treatment. The reduction in the bandgap is positively correlated with the Hf content and annealing temperature. The residual stresses of films sputtered from Mg{sub 0.05}Zn{sub 0.95}O and Hf{sub 0.025}Mg{sub 0.05}Zn{sub 0.925}O targets are determined based on X-ray diffraction (XRD) data using a bi-axial stress model. The residual stresses of as-deposited films are compressive. As the annealing temperature increases, the residual stresses are relaxed and even become tensile. The bandgap narrowing after thermal treatment is attributed to the stress relaxation that changes the repulsion between the oxygen 2p and zinc 4s bands. Slight grain growth may also result in bandgap reduction because bandgap modification caused by the quantum confinement effect becomes significant in amorphous/nanocrystalline materials. The amorphous thin films reveal good thermal stability after 600 °C annealing for up to 2 h, as evidenced by the XRD and transmission spectra. - Highlights: • Thin films are sputtered from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets at room temperature. • Bandgap increases with Hf content but decreases with post-annealing temperature. • Bandgap narrowing after annealing partly results from the relaxation of stresses. • Bandgap narrowing partly results from quantum confinement effect by nanomaterials. • Hf doping increases resistivity due to the lattice disorder and enlarged bandgap.

  6. The catalytic destruction of antibiotic tetracycline by sulfur-doped manganese oxide (S-MgO) nanoparticles.

    Science.gov (United States)

    Moussavi, Gholamreza; Mashayekh-Salehi, Ali; Yaghmaeian, Kamyar; Mohseni-Bandpei, Anoshiravan

    2018-03-15

    The present study evaluates the efficacy of S-doped MgO (S-MgO) as compared with the plain MgO as a catalyst for destructive removal of tetracycline (TTC) in aqueous solutions. The S-MgO had around 6% S in its structure. Doping MgO with S caused increase in surface oxygen vacancy defects. Adding S-MgO (12 g/L) to a TTC aqueous solution (50 mg/L) caused removal of around 99% TTC at the neutral pH (ca. 5.1) and a short reaction time of 10 min. In comparison, plain MgO could remove only around 15% of TTC under similar experimental conditions. Diffusing O 2 into the TTC solution under the reaction with S-MgO resulted in a considerable improvement of TTC removal as compared to diffusing N 2 . Complete removal of TTC and 86.4% removal of its TOC could be obtained using 2 g/L S-MgO nanoparticles. The removal of TTC increased with the increase in solution temperature. The presence of nitrate, sulfate and chloride did not considerably affect the removal of TTC using S-MgO while TTC removal significantly decreased at the presence of bicarbonate and phosphate. The S-MgO was a stable and reusable catalyst exhibiting much higher catalytic activity than plain MgO for the TTC destruction. Accordingly, S-MgO is an emerging and efficient catalyst for catalytic decomposition and mineralization of such pharmaceutical compounds as TTC under atmospheric temperature and pressure. Copyright © 2018 Elsevier Ltd. All rights reserved.

  7. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    OpenAIRE

    Xiao Wang; Wei Wang; Jingli Wang; Hao Wu; Chang Liu

    2017-01-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgG...

  8. Critical current density in MgB2 bulk samples after co-doping with nano-SiC and poly zinc acrylate complexes

    International Nuclear Information System (INIS)

    Zhang, Z.; Suo, H.; Ma, L.; Zhang, T.; Liu, M.; Zhou, M.

    2011-01-01

    SiC and poly zinc acrylate complexes co-doped MgB 2 bulk has been synthesized. Co-doping can cause higher carbon substitutions and the second phase particles. Co-doping can further increase the Jc value of MgB 2 bulk on the base of the SiC doping. The co-doped MgB 2 bulk samples have been synthesized using an in situ reaction processing. The additives is 8 wt.% SiC nano powders and 10 wt.% [(CH 2 CHCOO) 2 Zn] n poly zinc acrylate complexes (PZA). A systematic study was performed on samples doped with SiC or PZA and samples co-doped with both of them. The effects of doping and co-doping on phase formation, microstructure, and the variation of lattice parameters were studied. The amount of substituted carbon, the critical temperature (T c ) and the critical current density (J c ) were determined. The calculated lattice parameters show the decrease of the a-axis, while no obvious change was detected for c-axis parameter in co-doped samples. This indicates that the carbon was substituted by boron in MgB 2 . The amount of substituted carbon for the co-doped sample shows an enhancement compared to that of the both single doped samples. The co-doped samples perform the highest J c values, which reaches 3.3 x 10 4 A/cm 2 at 5 K and 7 T. It is shown that co-doping with SiC and organic compound is an effective way to further improve the superconducting properties of MgB 2 .

  9. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  10. Effect of nano-carbon particle doping on the flux pinning properties of MgB2 superconductor

    OpenAIRE

    Soltanian, S.; Horvat, J.; Wang, X. L.; Munroe, P.; Dou, S. X.

    2003-01-01

    Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, microstructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice parameter and the Tc decreased monotonically with increasing doping level. For the sample doped with...

  11. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Science.gov (United States)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  12. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  13. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

  14. Investigation of fluorine adsorption on nitrogen doped MgAl{sub 2}O{sub 4} surface by first-principles

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Xiaojun; Xu, Zhenming [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Li, Jie, E-mail: 15216105346@163.com [School of Metallurgy and Environment, Central South University, Changsha 410083 (China); Chen, Jiangan [Faculty of Resource and Environmental Engineering, Jiangxi University of Science and Technology, Ganzhou 341000 (China); Liu, Qingsheng [Faculty of Metallurgical and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000 (China)

    2016-07-15

    Graphical abstract: First-principles calculations indicate that MgAl{sub 2}O{sub 4} surface is fluorine-loving, but hydrophobic. N doped MgAl{sub 2}O{sub 4} (100) surface structure shows the highest fluorine adsorption performance and fluorine atom is more preferentially adsorbed on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: N doped MgAl{sub 2}O{sub 4} (100) > Al{sub 2}O{sub 3} (0001) > MgAl{sub 2}O{sub 4} (100) > MgO (100). N doped MgAl{sub 2}O{sub 4} is a promising candidate for fluorine removal. - Highlights: • MgAl{sub 2}O{sub 4} surface is fluorine-loving, not hydrophilic. • Fluorine preferentially adsorbs on the Mg-Al bridge site. • Adsorption intensity follow this order: N doped MgAl{sub 2}O{sub 4} > Al{sub 2}O{sub 3} > MgAl{sub 2}O{sub 4} > MgO. • Excellent adsorption performance attributes to electron compensation of N atom. • Nitrogen doped MgAl{sub 2}O{sub 4} is a promising candidate for fluorine removal. - Abstract: The nature of fluorine adsorption on pure and N doped MgAl{sub 2}O{sub 4} surface has been investigated by first-principles calculations based on the density functional theory. Calculated results indicate that MgAl{sub 2}O{sub 4} surface is fluorine-loving, not hydrophilic. Nitrogen doped MgAl{sub 2}O{sub 4} (100) surface shows the highest fluorine adsorption performance and fluorine atom preferentially adsorbs on the Mg-Al bridge site. The fluorine adsorption intensity follow this order: Nitrogen doped MgAl{sub 2}O{sub 4} (100) > Al{sub 2}O{sub 3} (0001) > MgAl{sub 2}O{sub 4} (100) > MgO (100). In-depth PDOS analysis suggested that 2p orbitals of F atom strongly hybridized with 3s- and 3p-orbitals of Al atom contribute to its high adsorption intensity. According to the analysis of Hirshfeld charge, the excellent fluorine adsorption performance of nitrogen doped MgAl{sub 2}O{sub 4} attributes to the electron compensation effect of nitrogen atom and strong electrostatic interactions. All these

  15. Photoluminescence and thermoluminescence properties of Eu2+ doped and Eu2+ ,Dy3+ co-doped Ba2 MgSi2 O7 phosphors.

    Science.gov (United States)

    Sao, Sanjay Kumar; Brahme, Nameeta; Bisen, D P; Tiwari, Geetanjali

    2016-11-01

    In this work, we report the preparation, characterization, comparison and luminescence mechanisms of Eu 2 + -doped and Eu 2 + ,Dy 3 + -co-doped Ba 2 MgSi 2 O 7 (BMSO) phosphors. Prepared phosphors were synthesized via a high temperature solid-state reaction method. All prepared phosphors appeared white. The phase structure, particle size, and elemental analysis were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) analysis. The luminescence properties of the phosphors were investigated by thermoluminescence (TL) and photoluminescence (PL). The PL excitation and emission spectra of Ba 2 MgSi 2 O 7 :Eu 2 + showed the peak to be around 381 nm and 490 nm respectively. The PL excitation spectrum of Ba 2 MgSi 2 O 7 :Eu 2 + Dy 3 + showed the peak to be around 341 nm and 388 nm, and the emission spectrum had a broad band around 488 nm. These emissions originated from the 4f 6 5d 1 to 4f 7 transition of Eu 2 + . TL analysis revealed that the maximum TL intensity was found at 5 mol% of Eu 2 + doping in Ba 2 MgSi 2 O 7 phosphors after 15 min of ultraviolet (UV) light exposure. TL intensity was increased when Dy 3 + ions were co-doped in Ba 2 MgSi 2 O 7 :Eu 2 + and maximum TL intensity was observed for 2 mol% of Dy 3 + . TL emission spectra of Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors were found at 500 nm. TL intensity increased with UV exposure time up to 15 min, then decreased for the higher UV radiation dose for both Eu doping and Eu,Dy co-doping. The trap depths were calculated to be 0.54 eV for Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and 0.54 eV and 0.75 eV for Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors. It was observed that co-doping with small amounts of Dy 3 + enhanced the thermoluminescence properties of Ba 2 MgSi 2 O 7 phosphor. Copyright © 2016 John Wiley & Sons, Ltd. [Correction added on 5 April 2016, after first online publication: The

  16. Synthesis and dosimetric characterization of LiF-MgF2, doped with Lu

    International Nuclear Information System (INIS)

    Gonzalez, Pedro R.; Nieto, Ana L.; Cruz-Zaragoza, Epifanio; Furetta, Claudio

    2013-01-01

    The results of the synthesis and characterization of dosimetric thermoluminescent material based on the composition LiF-MgF 2 1:1 (Z eff = 9.7) doped Lu 3+ ions, developed at the National Institute of Nuclear Research, Mexico are presented. The TL material synthesis was carried out using the technique of casting solid substances, preparations were made with dopant concentrations of 0.25, 0.83, 1.00 and 2.00 mol%, the 1 mol% resulted in increased sensitivity to radiation. Its brightness curve has the TL peak intensity at 330 deg C when irradiated to 1000 Gy, whereas when irradiated greater than 2500 Gy, occurs at 230 ° C, also has a peak of smaller maximum intensity at 140 ° C. Microstructural characterization of the obtained material was performed using the techniques of scanning electron microscopy and X-ray diffraction Kinetic parameters of the curves of brightness of the material is performed by the deconvolution method using the sequential quadratic programming algorithm, developed in the same institute. This new TL material complies fully with international standards to be used as dosimetry system in medical physics, research and industry, as its TL response (total integrated under the curve) to 60 Co gamma radiation, presents linearity between 1 and 5000 Gy , while the response of commercial TLD dosimeter-100 used as a reference, is only linear up to 10 Gy

  17. Effect of Mg$^{2+}$ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd$_{3}$Al$_{2}$Ga$_{3}$O$_{12}$ crystals

    CERN Document Server

    Lucchini, M.T.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  18. Effect of Mg"2"+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd_3Al_2Ga_3O_1_2 crystals

    International Nuclear Information System (INIS)

    Lucchini, M.T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-01-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd_3Al_2Ga_3O_1_2 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd_3Al_2Ga_3O_1_2 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd_3Al_2Ga_3O_1_2 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  19. ANTIMICROBIAL ACTIVITY OF Ag+, Cu2+, Zn2+, Mg2+ IONS DOPED CHITOSAN NANOPARTICLES

    Directory of Open Access Journals (Sweden)

    Sukhodub LB

    2015-04-01

    Full Text Available Modification by polymers and inorganic ions of the bioactive materials for orthopedic implants with the purpose of initiating controlled reactions in tissues that surround the implant, is one of the modern approaches in medical materials. A key feature of functional polymers is their ability to form complexes with various metal ions in solution. Chitosan is natural biopolymer with pronounced affinity to transition metal ions. Some researches prove the higher antimicrobial activity of Chitosan-metal complexes compared with pure Chitosan. The purpose of this work was the study of antimicrobial activity of Chitosan nanoparticles modified by metal ions Ag+, Cu2+, Zn2+, Mg2+ against reference strains S. aureus 25923 ATSS, E. coli ATCC 25922, C. albicans ATCC 885653 for their further use as components of the composite biomaterials for medical purpose.Chitosan nanoparticles suspension was prepared by known method based on the ionotropic gelation between chitosan and sodium tripolyphosphate.To obtain Chitosan-metal nanoparticles to the Chitosan suspension were added the corresponding metal ions aqueous solutions in quantity to match the concentration of metal ions of 200 ppm . Antibacterial activities of Ag+, Cu2+, Zn2+, Mg2+ ions doped Chitosan nanoparticles, pure Chitosan nanoparticles, metal ions and 1% (v/v acetic acid solution (it was used as solvent for Chitosan against bacteria were evaluated by determination of minimum inhibitory concentration (MIC and minimum bactericidal concentration (MBC in vitro. Muller– Hinton (MH broth and MH agar (Russia were used as growth media. The bacteria suspension for further use was prepared with concentration that corresponded 0,5units by McFarland scale. The MIC was determined by a broth dilution method. The results were read after 24 hours of experimental tubes incubation at 37 oC as equivalent to the concentration of the tube without visible growth. To evaluate MBC, a sample of 0,1 ml was transferred from

  20. Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

    International Nuclear Information System (INIS)

    Yang, Y.; Cheng, C.H.; Wang, L.; Sun, H.H.; Zhao, Y.

    2010-01-01

    In this paper, we study the doping effect of sorbic acid (C 6 H 8 O 2 ), from 0 to 20 wt.% of the total MgB 2 , on critical temperature (T c ), critical current density (J c ), irreversibility field (H irr ) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J c (B) in the framework of percolation theory and it is found that the J c (B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J c is due to the reduction of anisotropy in high field region.

  1. Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

    Science.gov (United States)

    Kuo, Dong-Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

    2015-01-01

    Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential () growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm-3 and electrical mobility of 15.7 ± 4.2 cm2 V-1 s-1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/ n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.

  2. Mg-doped biphasic calcium phosphate by a solid state reaction route: Characterization and evaluation of cytotoxicity

    Energy Technology Data Exchange (ETDEWEB)

    Webler, Geovana D. [Instituto de Física, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil); Correia, Ana C.C.; Barreto, Emiliano [Laboratório de Biologia Celular, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil); Fonseca, Eduardo J.S., E-mail: eduardo@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió-AL 57072970 (Brazil)

    2015-07-15

    Hydroxyapatite (HAP) and β-tricalcium phosphate (β-TCP) are widely used in tissue engineering because of their chemical similarity to the inorganic bone phase. In this work, we prepare biphasic calcium phosphate (BCP, a mixture of HAP and β-TCP) doped with different concentrations of magnesium to investigate the influence of magnesium on the BCP crystal structure. Magnesium is known to be an important element in the composition of bones and teeth. Recent research has shown that the doping of magnesium into BCP improves its bone metabolism and mechanical properties without affecting its biocompatibility. The samples were prepared by solid-state reaction from calcium carbonate, monobasic ammonium phosphate, and magnesium nitrate hexahydrate. Varying concentrations of magnesium were used and its modifications were examined by different characterization techniques. The phase composition and morphology of the ceramic powders were characterized by X-ray diffraction and scanning electron microscopy, respectively. The functional groups were analyzed using Fourier transform infrared spectroscopy and Raman spectroscopy. Cell viability experiments, using macrophage-like cell lines J774, showed that the synthesized Mg-doped BCP did not exhibit cytotoxicity regardless of the doses assayed or the different concentrations of magnesium used, suggesting it as a good material for potential biological applications. - Highlights: • Simple and fast method for the preparation of the Mg-BCP. • Study of the influence of the incorporation of Mg in the BCP. • Cell viability showed that the synthesized Mg-BCP did not exhibit cytotoxicity.

  3. Catalytic properties of pure and K{sup +}-doped Cu O/Mg O system towards 2-propanol conversion

    Energy Technology Data Exchange (ETDEWEB)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N. [Ain Shams University, Faculty of Education, Chemistry Department, Roxy, Heliopolis, Cairo 11757 (Egypt); El-Shobaky, G. A., E-mail: saharelmolla@yahoo.com [National Research Center, Dokki, Cairo (Egypt)

    2013-08-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K{sup +} species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N{sub 2} at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu{sub 2}O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K{sup +}-doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K{sup +}-doping increased the catalytic activity and catalytic durability. (Author)

  4. Catalytic properties of pure and K+-doped Cu O/Mg O system towards 2-propanol conversion

    International Nuclear Information System (INIS)

    El-Molla, S. A.; Amin, N. H.; Hammed, M. N.; Sultan, S. N.; El-Shobaky, G. A.

    2013-01-01

    Cu O/Mg O system having different compositions was prepared by impregnation method followed by calcination at 400-900 C. The effect of Cu O content, calcination temperature and doping with small amounts of K + species (1-3 mol %) on physicochemical, surface and catalytic properties of the system were investigated using X-ray diffraction, adsorption of N 2 at - 196 C, and conversion of isopropyl alcohol at 150-400 C using a flow technique. The results revealed that the solids having the formulae 0.2 and 0.3 Cu O/Mg O calcined at 400 C consisted of nano sized Mg O and Cu O as major phases together with Cu 2 O as minor phase. The Bet-surface areas of different absorbents are decreased by increasing Cu O content, calcination temperature and K + -doping. Mg O-support material showed very small catalytic activity in 2-propanol conversion. The investigated system behaved as selective catalyst for dehydrogenation of 2-propanol with selectivity >80%. The catalytic activity increased by increasing Cu O content and decreased by increasing the calcination temperature within 400-900 C. K + -doping increased the catalytic activity and catalytic durability. (Author)

  5. Fabrication and characterization of nanostructured Mg-doped CdS/AAO nanoporous membrane for sensing applications

    Science.gov (United States)

    Shaban, Mohamed; Mustafa, Mona; Hamdy, Hany

    2016-04-01

    In this study, Mg-doped CdS nanostructure was deposited onto anodic aluminum oxide (AAO) membrane substrate using sol-gel spin coating method. The AAO membrane was prepared by a two-step anodization process combined with pore widening process. The morphology, chemical composition, and structure of the spin- coated CdS nanostructure have been studied. The morphology of the fabricated AAO membrane and the deposited Mg-doped CdS nanostructure was investigated using scanning electron microscopy (SEM). The SEM of AAO illustrates a typical hexagonal and smooth nanoporous alumina membrane with interpore distance of ~ 100 nm, the pore diameter of ~ 60 nm. SEM of Mgdoped CdS shows porous nanostructured film of CdS nanoparticles. This film well adherents and covers the AAO substrate. The energy dispersive X-ray (EDX) pattern exhibits the signals of Al, O from AAO membrane and Mg, Cd, and S from the deposited CdS. This indicates the high purity of the fabricated membrane and the deposited Mg-doped CdS nanostructure. Using X-ray diffraction (XRD) pattern, Scherrer equation was used to calculate the average crystallite size. Additionally, the texture coefficients and density of dislocations were calculated. The fabricated CdS/AAO was applied to detect glucose of different concentrations. The proposed method has some advantages such as simple technology, low cost of processing, and high throughput. All of these factors facilitate the use of the prepared films in sensing applications.

  6. Mg-doped biphasic calcium phosphate by a solid state reaction route: Characterization and evaluation of cytotoxicity

    International Nuclear Information System (INIS)

    Webler, Geovana D.; Correia, Ana C.C.; Barreto, Emiliano; Fonseca, Eduardo J.S.

    2015-01-01

    Hydroxyapatite (HAP) and β-tricalcium phosphate (β-TCP) are widely used in tissue engineering because of their chemical similarity to the inorganic bone phase. In this work, we prepare biphasic calcium phosphate (BCP, a mixture of HAP and β-TCP) doped with different concentrations of magnesium to investigate the influence of magnesium on the BCP crystal structure. Magnesium is known to be an important element in the composition of bones and teeth. Recent research has shown that the doping of magnesium into BCP improves its bone metabolism and mechanical properties without affecting its biocompatibility. The samples were prepared by solid-state reaction from calcium carbonate, monobasic ammonium phosphate, and magnesium nitrate hexahydrate. Varying concentrations of magnesium were used and its modifications were examined by different characterization techniques. The phase composition and morphology of the ceramic powders were characterized by X-ray diffraction and scanning electron microscopy, respectively. The functional groups were analyzed using Fourier transform infrared spectroscopy and Raman spectroscopy. Cell viability experiments, using macrophage-like cell lines J774, showed that the synthesized Mg-doped BCP did not exhibit cytotoxicity regardless of the doses assayed or the different concentrations of magnesium used, suggesting it as a good material for potential biological applications. - Highlights: • Simple and fast method for the preparation of the Mg-BCP. • Study of the influence of the incorporation of Mg in the BCP. • Cell viability showed that the synthesized Mg-BCP did not exhibit cytotoxicity

  7. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin

    2013-01-01

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm 2 /V s and an on–off current ratio over 10 6 . •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm 2 /V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm 2 /V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10 6 . Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films

  8. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

    Science.gov (United States)

    Wang, Xiao; Wang, Wei; Wang, Jingli; Wu, Hao; Liu, Chang

    2017-03-01

    P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

  9. Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

    Science.gov (United States)

    Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

    2018-06-01

    Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

  10. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Sørensen, Ole Toft

    2000-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a P-o2 dependence according to R proportional to p(o2)(-1/4) in the considered P-o2 range(2.5 x 10(-5) bar

  11. Refractive Indices in Undoped and MgO-Doped Near-Stoichiometric LiTaO3 Crystals

    Science.gov (United States)

    Nakamura, Masaru; Higuchi, Shinji; Takekawa, Shunji; Terabe, Kazuya; Furukawa, Yasunori; Kitamura, Kenji

    2002-04-01

    Undoped and MgO (0.5 and 1.0-mol%)-doped near-stoichiometric LiTaO3 (SLT) crystals were grown from off-congruent Li-rich solutions (Li˜ 60 mol%) by the double-crucible Czochralski method using a continuous SLT ceramic grain charging system. Curie temperatures of the undoped and MgO (0.5 and 1.0-mol%)-doped SLT crystals are 688, 694 and 695°C, respectively. The ordinary and extraordinary refractive indices (no, ne) of these crystals were measured by the prism coupling technique in the wavelength range from 0.440 to 1.050 μm at room temperature, and the temperature-independent Sellmeier equations for each crystal were derived from the measured refractive index data. no of the SLT crystal was almost the same as that of a congruent-melt LiTaO3 (CLT) crystal, while ne of the SLT crystal was lower than that of the CLT crystal. ne was lower than no for the SLT crystal, similar to as in the case of the LiNbO3 crystal. The refractive indices of the SLT crystal, no and ne, were found to be almost independent of MgO concentration at the doping level of 0.5 and 1.0 mol%.

  12. Influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate (ZTS) single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Selvapandiyan, M., E-mail: mselvapandiyan@rediffmail.com [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Arumugam, J. [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Sundaramoorthi, P. [Department of Physics, Thiruvalluvar Government Arts College, Rasipuram 637 401 (India); Sudhakar, S. [CSIR–National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110 012 (India)

    2013-12-15

    Highlights: •The influence of MgSO{sub 4} doping on the properties of ZTS single crystals grown at room temperature. •Thermal stability of the crystals increased with incorporation of Mg atom. •Energy band gap was estimated from UV–vis spectra. •ZTS is a potential material for frequency conversion. •Both pure and doped ZTS crystals are belonging to category of typical insulating materials. -- Abstract: The influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate single crystals grown at room temperature by slow evaporation solution growth technique was studied. Powder XRD analysis confirmed the orthorhombic crystal structure with noncentrosymmetric space group Pca2{sub 1}. The mechanical properties of the grown crystals were analysed by Vicker’s microhardness method. Functional groups present in the materials were identified by FTIR spectral analysis in the range between 4000 and 400 cm{sup −1}. The UV–Vis spectrum indicates that the UV cut-off wavelength of the crystals has less than 297 nm. The thermal stability of the grown crystals was determined with the aid of thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC). Second order nonlinear optical behaviour of the grown crystals have been confirmed by Kurtz powder second harmonic generation (SHG) test.

  13. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  14. Graphene Oxide Papers Simultaneously Doped with Mg(2+) and Cl(-) for Exceptional Mechanical, Electrical, and Dielectric Properties.

    Science.gov (United States)

    Lin, Xiuyi; Shen, Xi; Sun, Xinying; Liu, Xu; Wu, Ying; Wang, Zhenyu; Kim, Jang-Kyo

    2016-01-27

    This paper reports simultaneous modification of graphene oxide (GO) papers by functionalization with MgCl2. The Mg(2+) ions enhance both the interlayer cross-links and lateral bridging between the edges of adjacent GO sheets by forming Mg-O bonds. The improved load transfer between the GO sheets gives rise to a maximum of 200 and 400% increases in Young's modulus and tensile strength of GO papers. The intercalation of chlorine between the GO layers alters the properties of GO papers in two ways by forming ionic Cl(-) and covalent C-Cl bonds. The p-doping effect arising from Cl contributes to large enhancements in electrical conductivities of GO papers, with a remarkable 2500-fold surge in the through-thickness direction. The layered structure and the anisotropic electrical conductivities of reduced GO papers naturally create numerous nanocapacitors that lead to charge accumulation based on the Maxwell-Wagner (MW) polarization. The combined effect of much promoted dipolar polarizations due to Mg-O, C-Cl, and Cl(-) species results in an exceptionally high dielectric constant greater than 60 000 and a dielectric loss of 3 at 1 kHz by doping with 2 mM MgCl2. The excellent mechanical and electrical properties along with unique dielectric performance shown by the modified GO and rGO papers open new avenues for niche applications, such as electromagnetic interference shielding materials.

  15. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  16. N–Mg dual-acceptor co-doping in CuCrO{sub 2} studied by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ying, E-mail: 1080071@hnust.edu.cn [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Nie, Guo-Zheng [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Zou, Daifeng [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, Shenzhen 518055 (China); Tang, Jing-Wu [School of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China); Ao, Zhimin, E-mail: Zhimin.Ao@gdut.edu.cn [Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2016-11-25

    In this paper, N–Mg dual-acceptor co-doping in CuCrO{sub 2} is investigated by first-principles calculations. The electronic structure and formation energies of Mg substituting Cr-site, N substituting O-site, and co-doping of both Mg on Cr-site and N on O-site in CuCrO{sub 2} are calculated. It is found that the structure with N and Mg codoped at the nearest sites has the lowest energy due to a modest attractive interaction between the two dopants. Compared with single N or Mg doped CuCrO{sub 2}, the N–Mg codoped CuCrO{sub 2} has a lower formation energy and shallower transition level. In addition, the total density of states (DOS) analysis shows that more hole states appear above the Fermi level and higher DOS for N–Mg co-doping is obtained in the N–Mg codoped CuCrO{sub 2}, which is good to enhance the p-type conductivity in CuCrO{sub 2}. - Highlights: • N–Mg dual-acceptor co-doping in CuCrO{sub 2} is investigated. • N–Mg complex has a lower formation energy and shallower transition level. • More hole states appear above the Fermi level for N–Mg co-doping. • N–Mg co-doping in CuCrO{sub 2} can be expected to have more stable p-type conductivity.

  17. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  18. Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

    2015-01-01

    The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

  19. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  20. Superior hydrogen storage kinetics of MgH{sub 2} nanoparticles doped with TiF{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Xie, L. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Liu, Y. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Wang, Y.T. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Zheng, J. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li, X.G. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China) and College of Engineering, Peking University, Beijing 100871 (China)]. E-mail: xgli@pku.edu.cn

    2007-08-15

    MgH{sub 2} nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH{sub 2} phase, without residual magnesium and with an average particle size of {approx}300 nm. Milled with 5 wt.% TiF{sub 3} as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of {approx}0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under {approx}20 bar hydrogen at room temperature. Compared with MgH{sub 2} micrometer particles doped with 5 wt.% TiF{sub 3} under the same conditions as the MgH{sub 2} nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed.

  1. Elucidation of structural, vibrational and dielectric properties of transition metal (Co2+) doped spinel Mg-Zn chromites

    Science.gov (United States)

    Choudhary, Pankaj; Varshney, Dinesh

    2018-05-01

    Co2+ doped Mg-Zn spinel chromite compositions Mg0.5Zn0.5-xCoxCr2O4 (0.0 ≤ x ≤ 0.5) have been synthesized by the high-temperature solid state method. Synchrotron and X-ray diffraction (XRD) studies show single-phase crystalline nature. The structural analysis is validated by Rietveld refinement confirms the cubic structure with space group Fd3m. Crystallite size is estimated from Synchrotron XRD which was found to be 30-34 nm. Energy dispersive analysis confirms stoichiometric Mg0.5Zn0.5-xCoxCr2O4 composition. Average crystallite size distribution is estimated from imaging software (Image - J) of SEM is in the range of 100-250 nm. Raman spectroscopy reveals four active phonon modes, and a pronounced red shift is due to enhanced Co2+ concentration. Increased Co2+ concentration in Mg-Zn chromites shows a prominent narrowing of band gap from 3.46 to 2.97 eV. The dielectric response is attributed to the interfacial polarization, and the electrical modulus study supports non-Debye type of dielectric relaxation. Ohmic junctions (minimum potential drop) at electrode interface are active at lower levels of doping (x transformer applications at high frequencies.

  2. Structural and optical studies of Mg doped nanoparticles of chromium oxide (Cr2O3) synthesized by co-precipitation method

    Science.gov (United States)

    Singh, Jarnail; Verma, Vikram; Kumar, Ravi

    2018-04-01

    We present here the synthesization, structural and optical studies of Mg doped nanoparticles of Chromium oxide (Cr2O3) prepared using co-precipitation method. These samples were characterized using powder X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman spectroscopy and UV-Vis spectroscopy techniques. We have demonstrated that there is negligible change in optical band gap with the Mg doping. The prepared Cr2O3 nanoparticles are spherical in shape, but they are transformed into platelets when doped with Mg. The XRD studies reveal that the Mg doping in Cr2O3 doesn't affect the structure of Chromium oxide (Cr2O3).

  3. Investigation of structural and optical properties of CaTiO3 powders doped with Mg2+ and Eu3+ ions

    International Nuclear Information System (INIS)

    Oliveira, Larissa H.; Savioli, Julia; Moura, Ana P. de; Nogueira, Içamira C.; Li, Maximo S.; Longo, Elson; Varela, José A.; Rosa, Ieda L.V.

    2015-01-01

    In this work, CaTiO 3 powders doped with Mg 2+ ions and CaTiO 3 powders co-doped with Mg 2+ and Eu 3+ ions were prepared by the polymeric precursor method (PPM). These powders were characterized by different characterization techniques to study the influence of Mg 2+ doping as well as Mg 2+ and Eu 3+ co-doping in structural and optical properties of CaTiO 3 perovskite-type structure. The Rietveld refinement and Micro-Raman analyses suggested the substitution Mg 2+ and Eu 3+ ions in the A-site of CaTiO 3 perovskite. The influence of Mg 2+ doping can be detected by the displacement of calcium and oxygen atomic positions when compared to the non-doped CaTiO 3 powder. When Eu 3+ ions are added to the A-site of this perovskite the excess of positive charge can be compensated by the formation of calcium vacancies. Luminescence data showed that Ca 1-x Mg x TiO 3 and Ca 1x Mg x/2 Eu 2y/3 TiO 3 powders are potential materials for fabrication of lighting devices based on near-UV and blue LED using an excitation wavelength of 397 and/or 450 nm. - Highlights: • CaTiO 3 co-doped with Mg 2+ and Eu 3+ were obtained by the Polymeric Precursor Method. • Incorporation of Mg 2+ and Eu 3+ ions in the CaTiO 3 lattice. • Enhancement of the Eu 3+ photoluminescence

  4. Synthesis and characterization of Zn-doped MgAl-layered double hydroxide nanoparticles as PVC heat stabilizer

    International Nuclear Information System (INIS)

    Wang, Gongling; Yang, Mei; Li, Zhiwen; Lin, Kaifeng; Jin, Quan; Xing, Chaojian; Hu, Zhudong; Wang, Dan

    2013-01-01

    Zn-doped MgAl-layered double hydroxides (LDHs) with M 2+ /M 3+ = 2 and different molar ratios of Mg/Zn have been synthesized by modified homogeneous co-precipitation method and characterized by powder X-ray diffraction, Transmission electron microscopy, Fourier transform infrared spectrum and thermogravimetry, and differential thermal analysis techniques. The thermal stabilizing effects of different LDHs on PVC were studied by Congo red test and thermal aging test. All of the nanoparticles show plate-like morphology and the average diameter of particles is around 90 nm. Results show that the introduction of Zn increased the average bond length and area of the layers of LDHs, therefore enhanced the adsorption ability on HCl gas which was generated during degradation of PVC to improve the thermal stability of PVC. LDHs with molar ratio of Mg/Zn = 1.0 shows the best thermal stabilizing effect on PVC

  5. Synthesis and characterization of Zn-doped MgAl-layered double hydroxide nanoparticles as PVC heat stabilizer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gongling; Yang, Mei [Chinese Academy of Sciences, State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering (China); Li, Zhiwen; Lin, Kaifeng [Harbin Institute of Technology, Academy of Fundamental Interdisciplinary Sciences (China); Jin, Quan; Xing, Chaojian; Hu, Zhudong [Chinese Academy of Sciences, State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering (China); Wang, Dan, E-mail: danwang@mail.ipe.ac.cn [Harbin Institute of Technology, Academy of Fundamental Interdisciplinary Sciences (China)

    2013-09-15

    Zn-doped MgAl-layered double hydroxides (LDHs) with M{sup 2+}/M{sup 3+} = 2 and different molar ratios of Mg/Zn have been synthesized by modified homogeneous co-precipitation method and characterized by powder X-ray diffraction, Transmission electron microscopy, Fourier transform infrared spectrum and thermogravimetry, and differential thermal analysis techniques. The thermal stabilizing effects of different LDHs on PVC were studied by Congo red test and thermal aging test. All of the nanoparticles show plate-like morphology and the average diameter of particles is around 90 nm. Results show that the introduction of Zn increased the average bond length and area of the layers of LDHs, therefore enhanced the adsorption ability on HCl gas which was generated during degradation of PVC to improve the thermal stability of PVC. LDHs with molar ratio of Mg/Zn = 1.0 shows the best thermal stabilizing effect on PVC.

  6. Phase segregation and dielectric, ferroelectric, and piezoelectric properties of MgO-doped NBT-BT lead-free ferroelecric ceramics

    Science.gov (United States)

    Liu, Gang; Wang, Ziyang; Zhang, Leiyang; Shi, Wenjing; Jing, Jiayi; Chen, Yi; Liu, Hongbo; Yan, Yan

    2018-03-01

    MgO doped NBT-BT ceramics were prepared by the conventional electroceramic processing. The effects of MgO on the phase, microstructures and electrical properties of NBT-BT ceramics were systematically investigated. When doping content is more than 1%, a second phase appeared, which has great effect on dielectric, ferroelectric, and piezoelectric properties, such as the T F-R peak weakened, moved to the higher temperature, and eventually disappeared. When the doping content is above 1.5%, the ceramic samples show a strong relaxation. The detailed analysis and discussion can be found within this study.

  7. Superconducting properties of Zn and Al double-doped Mg1-x(Zn0.5Al0.5)xB2

    DEFF Research Database (Denmark)

    Xu, G.J.; Grivel, Jean-Claude; Abrahamsen, A.B.

    2004-01-01

    (XRD), ac susceptibility, magnetization and resistivity. The double doping leads to decreases in both the lattice parameters a and c, and the T-c decreases with increasing dopant content. A systematical comparison with Al doped- and Li, Al double doped MgB2 of structure, superconducting transition......A series of polycrystalline samples of Mg1-x(Zn0.5Al0.5)(x)B-2 (0less than or equal toxless than or equal to0.8) were prepared by solid state reaction method and their structure, superconducting transition temperature (T-c) and transport properties were investigated by means of X-ray diffraction...

  8. Aluminum and carbon substitution in MgB2. Electron doping and scattering effects

    International Nuclear Information System (INIS)

    Samuely, P.; Szabo, P.; Pribulova, Z.; Angst, M.; Bud'ko, S.L.; Canfield, P.C.; Klein, T.; Lyard, L.; Marcus, J.; Marcenat, C.; Kang, B.W.; Kim, H.-J.; Lee, H.-S.; Lee, H.-K.; Lee, S.I.

    2007-01-01

    The point-contact spectroscopy is used to address the evolution of two superconducting energy gaps in the Al- and C-doped magnesium diboride polycrystals and single crystals with T c 's from 39 to 22 K prepared by different techniques. The obtained evolution of two gaps does not show any anomalous behavior but can be consistently described by the combination of the (prevailing) band filling effect and a (minor) increased interband scattering as proposed by Kortus et al. [Kortus et al., Phys. Rev. Lett. 94 (2005) 027002]. The approaching of two gaps is stronger in the Al-doped systems but interband scattering is still not large enough to merge two gaps. The full merging can expected only for higher dopings with T c 's below 10-15 K. In-magnetic-field measurements are used to analyze the intraband scatterings introduced by these two substitutions. It is shown that the carbon doping introduces significant disorder mainly by decreasing the diffusion coefficient in the π band while the Al substitution leaves the samples in the clean limit

  9. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Synergistic effect of Ti and F co-doping on dehydrogenation properties of MgH2 from first-principles calculations

    International Nuclear Information System (INIS)

    Zhang, J.; Huang, Y.N.; Mao, C.; Peng, P.

    2012-01-01

    Highlights: ► The co-incorporation of Ti and F into MgH 2 lattice is energetically favorable. ► The incorporated Ti and F in MgH 2 preferably generate TiH 2 and MgF 2 , respectively. ► The synergistic effect of Ti and F is superior to that of pure Ti. ► The weakened interactions of Mg–H explain enhanced dehydrogenation properties. - Abstract: The energetic and electronic properties of MgH 2 co-doped with Ti and F are investigated using first-principles calculations based on density functional theory. The calculation results show that incorporation of Ti combined with F atoms into MgH 2 lattice is energetically favorable relative to single incorporation of Ti atom. After dehydrogenation, the co-doped Ti and F in MgH 2 preferably generate TiH 2 and MgF 2 , respectively. Comparatively, the combined effect of Ti and F in improving the dehydrogenation properties of MgH 2 is superior to that of pure Ti. These results provide a reasonable explanation for experimental observations. Analysis of electronic structures suggests the enhanced dehydrogenation properties of doped MgH 2 can be attributed to the weakened bonding interactions between Mg and H due to foreign species doping.

  11. Orthorhombic polar Nd-doped BiFeO{sub 3} thin film on MgO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Leontyev, I N; Janolin, P-E; Dkhil, B [Laboratoire Structures, Proprietes et Modelisation des Solides, UMR CNRS-Ecole Centrale Paris, 92295 Chatenay-Malabry Cedex (France); Yuzyuk, Yu I [Faculty of Physics, Southern Federal University, Zorge 5, Rostov-on-Don 344090 (Russian Federation); El-Marssi, M [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Chernyshov, D; Dmitriev, V [Swiss-Norwegian Beam Lines at ESRF, Boite Postale 220, F-38043 Grenoble (France); Golovko, Yu I; Mukhortov, V M, E-mail: i.leontiev@rambler.ru [Southern Scientific Center RAS, Rostov-on-Don, 344006 (Russian Federation)

    2011-08-24

    A Nd-doped BiFeO{sub 3} thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45{sup 0} with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

  12. Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

    International Nuclear Information System (INIS)

    Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

    2011-01-01

    A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

  13. Studies on bare and Mg-doped LiCoO2 as a cathode material for lithium ion batteries

    CSIR Research Space (South Africa)

    Reddy, MV

    2014-05-01

    Full Text Available at ScienceDirect Electrochimica Acta jo ur nal ho me p age: www.elsev ier .com/ locate /e lec tac ta Graphical Abstract Electrochimica Acta xxx (2013) xxx–xxx Studies on Bare and Mg-doped LiCoO2 as a cathode material for Lithium ion Batteries M.V. Reddy... for Lithium ion Batteries M.V. Reddy∗, Thor Wei Jie, Charl J. Jafta, Kenneth I. Ozoemena, Mkhulu K. Mathe, A. Sree Kumaran Nair, Soo Soon Peng, M. Sobri Idris, Geetha Balakrishna, Fabian I. Ezema, B.V.R. Chowdari • Layered compounds, Li...

  14. Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3

    International Nuclear Information System (INIS)

    Nataf, Guillaume F.; Guennou, Mael; Haussmann, Alexander; Barrett, Nick; Kreisel, Jens

    2016-01-01

    The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Nataf, Guillaume F. [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Guennou, Mael [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Haussmann, Alexander [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, George-Baehr-Str. 1, 01069, Dresden (Germany); Barrett, Nick [Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Kreisel, Jens [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux (Luxembourg)

    2016-03-15

    The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Ionic conductivity of Ca and Mg doped NdGdZr1.95Sc0.05O7

    International Nuclear Information System (INIS)

    Anithakumari, P.; Mandal, B.P.; Grover, V.; Tyagi, A.K.; Mishra, A.K.

    2014-01-01

    The ionic conductivity of pyrochlore based materials makes them promising candidates for fuel-cell applications where high ionic conductivity and low activation energy are desired. Earlier it has been reported that 5%Sc doped GdNdZr 2 O 7 shows highest ionic conductivity. In this present work, an attempt has been made to further increase the oxygen vacancy concentration by the incorporation of Ca 2+ and Mg 2+ ions at A site of NdGdZr 1.95 Sc 0.05 O 7 (NGZS)

  17. Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO3 thin films on MgO substrates

    International Nuclear Information System (INIS)

    Kim, Yongsam; Chen, Chunhua; Saiki, Atsushi; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

    2002-01-01

    Niobium (Nb) and strontium (Sr) doped barium titanate (BT) films were deposited by radio frequency (RF) magnetron sputtering with Nb and Sr doped BT ceramic targets, respectively. The effect of Nb and Sr doping on the crystal structure of epitaxial BaTiO 3 thin films on MgO substrates was investigated. The crystal structure of the films was examined using the reciprocal space mapping measurement. All the films exhibit a cube-on-cube relation with respect to the substrates. As the amount of doped Sr increased, both of the in-plane and out-of-plane lattice constants of Sr doped BT films slowly approached the BT bulk values. On the other hand, the lattice constants of Nb doped BT films were rapidly coming close to the bulk values. These indicated that the lattices of doped BT films were relaxed as the amount of doped elements increased. In addition, Nb doping had greater influence on the relaxation of the films than Sr doping for the same content of dopant. (author)

  18. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Su, Bo-Yuan [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2013-12-15

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm{sup 2}/V s and an on–off current ratio over 10{sup 6}. •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm{sup 2}/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm{sup 2}/V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10{sup 6}. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

  19. Effect of sorbic acid doping on flux pinning in bulk MgB{sub 2} with the percolation model

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y. [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Key Laboratory of Magnetic Levitation and Maglev Train (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Wang, L.; Sun, H.H. [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Key Laboratory of Magnetic Levitation and Maglev Train (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Key Laboratory of Magnetic Levitation and Maglev Train (Ministry of Education of China), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2010-11-01

    In this paper, we study the doping effect of sorbic acid (C{sub 6}H{sub 8}O{sub 2}), from 0 to 20 wt.% of the total MgB{sub 2}, on critical temperature (T{sub c}), critical current density (J{sub c}), irreversibility field (H{sub irr}) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J{sub c}(B) in the framework of percolation theory and it is found that the J{sub c}(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J{sub c} is due to the reduction of anisotropy in high field region.

  20. Optical properties of Mg2+, Yb3+, and Ho3+ tri-doped LiNbO3 crystals

    Science.gov (United States)

    Dai, Li; Liu, Chun-Rui; Tan, Chao; Yan, Zhe-Hua; Xu, Yu-Heng

    2017-04-01

    A series of LiNbO3 crystals tri-doped with Mg{}2+, Yb{}3+, and Ho{}3+ are grown by the conventional Czochraski technique. The concentrations of Mg{}2+, Yb{}3+, and Ho{}3+ ions in Mg:Yb:Ho:LiNbO3 crystals are measured by using an inductively coupled plasma atomic emission spectrometry. The x-ray diffraction is proposed to determine the lattice constant and analyze the internal structure of the crystal. The light-induced scattering of Mg:Yb:Ho:LiNbO3 crystal is quantitatively described via the threshold effect of incident exposure energy flux. The exposure energy ({E}{{r}}) is calculated to discuss the optical damage resistance ability. The exposure energy of Mg(7 mol):Yb:Ho:LiNbO3 crystal is 709.17 J/cm2, approximately 425 times higher than that of the Mg(1 mol):Yb:Ho:LiNbO3 crystal in magnitude. The blue, red, and very intense green bands of Mg:Yb:Ho:LiNbO3 crystal are observed under the 980-nm laser excitation to evaluate the up-conversion emission properties. The dependence of the emission intensity on pumping power indicates that the up-conversion emission is a two-photon process. The up-conversion emission mechanism is discussed in detail. This study indicates that Mg:Yb:Ho:LiNbO3 crystal can be applied to the fabrication of new multifunctional photoluminescence devices. Project supported by the National Natural Science Foundation of China (Grant No. 51301055), the Youth Science Fund of Heilongjiang Province, China (Grant No. QC2015061), the Special Funds of Harbin Innovation Talents in Science and Technology Research, China (Grant No. 2015RQQXJ045 ), and the Science Funds for the Young Innovative Talents of Harbin University of Science and Technology, China (Grant No. 201501).

  1. A novel red phosphor Mg2GeO4 doped with Eu3+ for PDP applications

    International Nuclear Information System (INIS)

    Yang Hongmei; Shi Jianxin; Liang Hongbin; Gong Menglian

    2006-01-01

    A novel red emitting phosphor, Eu 3+ -doped Mg 2 GeO 4 , was prepared by the solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Mg 2 GeO 4 :Eu 3+ . Field-emission-scanning electron microscopy (FE-SEM) observation indicated a narrow size-distribution of about 0.5-2 μm nm for the particles with spindle-like shape. Photoluminescence (PL) and vacuum ultraviolet (VUV) excitation characteristics of the phosphor Mg 2 GeO 4 :Eu 3+ were studied. We have also studied the effect of preparation conditions such as temperature, heating time on the PL data. Photoluminescence measurements indicated that the phosphor exhibits bright red emission at about 609 nm under UV excitation. And the vacuum ultraviolet spectra present that the novel red phosphor Mg 2 GeO 4 :Eu 3+ shows strong absorption in the VUV region, which ensures the efficient absorption of the Xe plasma emission lines. The phosphor Mg 2 GeO 4 :Eu 3+ shows the strongest emission at 613 nm corresponding to the electric dipole 5 D - 7 F 2 transition of Eu 3+ excited at 147 nm. The optical properties study suggests that it is a potential candidate for plasma display panels (PDPs) application

  2. Radiation-damage recovery in undoped and oxidized Li doped Mg O crystals implanted with lithium ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. E-mail: ealves@itn.pt; Silva, R.C. da; Pinto, J.V.; Monteiro, T.; Savoini, B.; Caceres, D.; Gonzalez, R.; Chen, Y

    2003-05-01

    Undoped MgO and oxidized Li-doped MgO single crystals were implanted with 1 x 10{sup 17} Li{sup +}/cm{sup 2} at 175 keV. The Rutherford backscattering spectrometry (RBS)/channeling data obtained after implantation shows that damage was produced throughout the entire range of the implanted ions. Optical absorption measurements indicate that after implantation the most intense band occurs at {approx}5.0 eV, which has been associated with anion vacancies. After annealing at 450 K the intensity of the oxygen-vacancy band decreases monotonically with temperature and completely disappears at 950 K. A broad extinction band centered at {approx}2.14 eV associated with lithium precipitates emerges gradually and anneals out at 1250 K. RBS/channeling shows that recovery of the implantation damage is completed after annealing the oxidized samples at 1250 K.

  3. Preparation and spectral analysis of a new Tb3+-doped CaO-MgO-SiO2 glass ceramics

    International Nuclear Information System (INIS)

    Cheng Jinshu; Tian Peijing; Zheng Weihong; Xie Jun; Chen Zhenxia

    2009-01-01

    Tb 3+ -doped CaO-MgO-SiO 2 glass ceramics have been prepared and characterized. The structure and optical properties of the glass ceramics were studied by XRD, SEM, Raman, and fluorescence spectra. The precipitated crystalline phase in the glass ceramics was columnar CaMgSi 2 O 6 . Raman spectra showed the introduction of rare earth nearly had no influence on the sample structure. Fluorescence measurements showed that Tb 3+ ions entered into the diopside crystalline phase and induced a much stronger emission in the glass ceramics than that in the corresponding glass. With increase of Tb 3+ content and the introduction of Gd 3+ , the fluorescence intensity of the luminescent glass ceramic increased

  4. Development and characterization of Mn{sup 2+}-doped MgO nanoparticles by solution combustion synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Basha, Md. Hussain; Gopal, N. O., E-mail: nogopal@yahoo.com [Department of Physics, Vikrama Simhapuri University Post Graduate Center, Kavali-524201 (India); Rao, J. L. [Department of physics, Sri Venkateswara University, Tirupati-517502 (India); Nagabhushana, H. [Prof. C.N.R. Rao Centre for Nano Research, Tumkur University, Tumkur-572103 (India); Nagabhushana, B. M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore - 560054 (India); Chakradhar, R. P. S. [CSIR- National Aerospace Laboratories, Bangalore -560017 (India)

    2015-06-24

    Mn doped MgO Nanoparticles have been prepared by Solution Combustion Synthesis. The synthesized sample is characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Electron Paramagnetic Resonance (EPR). The prepared MgO:Mn (1 mol%) nano crystals appear to be of simple cubic crystalline phase with lattice parameters a = 4.218(2) Å and cell volume = 74.98 (7) Å{sup 3}. SEM micrograph of powders show highly porous, many agglomerates with irregular morphology, large voids, cracks and pores. EPR spectrum of the sample at room temperature exhibit an isotropic sextet hyperfine pattern, centered at g=1.99, characteristic if Mn{sup 2+} ions with S=I=5/2.The observed g value and the hyperfine value reveal the ionic bonding between Mn{sup 2+} and its surroundings.

  5. Electronic, magnetic and optical properties of B, C, N and F doped MgO monolayer

    Science.gov (United States)

    Moghadam, A. Dashti; Maskane, P.; Esfandiari, S.

    2018-06-01

    MgO as one of the alkaline earth oxides has various applications in industry. In this work, we aim to investigate the electronic, optical and magnetic properties of MgO monolayers. Furthermore, monolayer structures with substituted B, N, C and F atoms instead of O atom are studied. These results indicate that MgO layer has possessed potential application in optoelectronic and spintronic nano-devices.

  6. Ni-doping effect of Mg(0 0 0 1) surface to use it as a hydrogen storage material

    International Nuclear Information System (INIS)

    Kuklin, Artem V.; Kuzubov, Alexander A.; Krasnov, Pavel O.; Lykhin, Aleksandr O.; Tikhonova, Lyudmila V.

    2014-01-01

    Highlights: • Magnesium surface interaction with nickel at different it location was investigated. • A possibility of nickel migration on magnesium surface was examined. • A possibility of the nickel atoms to aggregate, producing the cluster was investigated. • A step by step diagram of the cluster formation was calculated and constructed. • The final step was the investigation of a hydrogenation process on the Ni cluster. - Abstract: A detailed study of Ni-doped Mg(0 0 0 1) surface performed by PAW method and the gradient corrected density functional GGA-PBE within the framework of generalized Kohn–Sham density functional theory (DFT) is presented in this work. Structural and electronic properties of magnesium surface interaction with nickel for the purpose of such compounds use for creation of hydrogen storage matrixes were investigated here. Choice of the PBE functional was caused by the good accordance of its prediction of the cell parameters with experimental results. It was shown that Ni atoms prefer to substitute for Mg atoms. Using NEB method, the diffusion barrier was calculated, and the most probable reaction path was established. In particular, when the Ni atom dopes the magnesium surface, it can migrate to the bulk and substitute for Mg in subsurface layers. Also a possibility of nickel cluster formation on clean surface of magnesium was examined. The kinetic factors hinder the movement of the nickel atoms to each other and make problematic the formation of clusters. The studies presented here showed that the diffusion barriers of the nickel atom migration from the cluster on the surface to the bulk of magnesium are 1.179 eV and 1.211 eV for the forward and reverse reactions, respectively. Therefore an improvement of the hydrogenation properties of Ni-doped magnesium surface depends on deposition not of the individual atoms, but their clusters. Hydrogenation of Ni cluster doping the magnesium surface was investigated. Initially Kubas

  7. Noise Analysis of Second-Harmonic Generation in Undoped and MgO-Doped Periodically Poled Lithium Niobate

    Directory of Open Access Journals (Sweden)

    Yong Wang

    2008-01-01

    Full Text Available Noise characteristics of second-harmonic generation (SHG in periodically poled lithium niobate (PPLN using the quasiphase matching (QPM technique are analyzed experimentally. In the experiment, a0.78 μm second-harmonic (SH wave was generated when a 1.56 μm fundamental wave passed through a PPLN crystal (bulk or waveguide. The time-domain and frequency-domain noise characteristics of the fundamental and SH waves were analyzed. By using the pump-probe method, the noise characteristics of SHG were further analyzed when a visible light (532 nm and an infrared light (1090 nm copropagated with the fundamental light, respectively. The noise characterizations were also investigated at different temperatures. It is found that for the bulk and waveguide PPLN crystals, the SH wave has a higher relative noise level than the corresponding fundamental wave. For the same fundamental wave, the SH wave has lower noise in a bulk crystal than in a waveguide, and in MgO-doped PPLN than in undoped PPLN. The 532 nm irradiation can lead to higher noise in PPLN than the 1090 nm irradiation. In addition, increasing temperature of device can alleviate the problem of noise in conjunction with the photorefractive effect incurred by the irradiation light. This is more significant in undoped PPLN than in MgO-doped one.

  8. Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

    International Nuclear Information System (INIS)

    Kalita, Himani; Pal, Pallabi; Dhara, Santanu; Pathak, Amita

    2017-01-01

    Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

  9. Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

    Energy Technology Data Exchange (ETDEWEB)

    Kalita, Himani [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pal, Pallabi; Dhara, Santanu [School of Medical Science and Technology, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pathak, Amita, E-mail: ami@chem.iitkgp.ernet.in [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India)

    2017-02-01

    Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

  10. High selectivity and stability of Mg-doped Al-MCM-41 for in-situ catalytic upgrading fast pyrolysis bio-oil

    International Nuclear Information System (INIS)

    Karnjanakom, Surachai; Suriya-umporn, Thanyamai; Bayu, Asep; Kongparakul, Suwadee; Samart, Chanatip; Fushimi, Chihiro; Abudula, Abuliti; Guan, Guoqing

    2017-01-01

    Highlights: • Mg-doped Al-MCM-41 was developed for in-situ catalytic upgrading of bio-oils. • Mg/Al-MCM-41 exhibited high selectivity to aromatic hydrocarbons. • The ratio of produced hydrocarbon reached up to 80% in upgraded bio-oil. • 1 wt.% Mg/Al-MCM-41 showed the highest catalytic activity. • Mg/Al-MCM-41 had stable reusability due to its coking inhabitation ability. - Abstract: In-situ catalytic upgrading of bio-oils derived from the fast pyrolysis of cellulose, lignin or sunflower stalk over Mg-doped Al-MCM-41 was investigated in details. It is found that Mg species with doping amounts ranged between 0.25 and 10 wt.% was well dispersed on Al-MCM-41, and that doping Mg on Al-MCM-41 effectively adjusted the acidity and basicity of the catalysts, resulting in significant improvement of bio-oil quality. Mg/Al-MCM-41 exhibited high selective conversion of bio-oils derived from cellulose, lignin or sunflower stalk to high value-added aromatic hydrocarbons via catalytic cracking, deoxygenation and aromatization. In the upgraded bio-oil, the relative total hydrocarbon amount reached up to approximately ≥80%, which consisted of aromatic hydrocarbon approximately 76% and aliphatic hydrocarbon approximately 4% for all feedstocks. The selectivity to the monocyclic aromatic hydrocarbons (MAHs) such as benzene, toluene and xylenes (BTXs) increased while the coke formed on the catalyst decreased with the increase in Mg doping amount. 1 wt.% Mg/Al-MCM-41 resulted in the highest relative total hydrocarbon amount in the upgraded bio-oil at lower catalytic deoxygenation temperature, and showed stable reusability for at least 5 cycles. It is expected that Mg/Al-MCM-41 can be widely applied for bio-oil upgrading in a practical process.

  11. Cooperative doping effects of Ti and nano-SiC on transport critical current density and grain connectivity of in situ MgB{sub 2} tapes

    Energy Technology Data Exchange (ETDEWEB)

    Pan, X.F., E-mail: PAN.Xifeng@nims.go.jp [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan)] [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China); Matsumoto, A.; Kumakura, H. [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cheng, C.H.; Zhao, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China)] [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2011-11-15

    We studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} tape. Ti doping significantly weakens the current dependence of T{sub c} of MgB{sub 2} tapes at self-field, and does not change T{sub c} or slightly increases T{sub c}. Further Ti adding can enhance in-field J{sub c} performance of SiC doped MgB{sub 2} tapes by a factor of 50-100% at 4.2 K and 10 T. Ti addition improves the J{sub c} performance of undoped and SiC doped MgB{sub 2} by modifying their grains connection. By now, nano-SiC powder (20-30 nm) is still the most effective additive for improving upper critical field and critical current density of MgB{sub 2}-based superconducting materials. However, some decomposed carbon aggregates at grain boundaries and results in serious weak-links of MgB{sub 2} grains, and these weak-links limit the further improvement of critical current density, J{sub c} of MgB{sub 2}, especially at lower fields. Ti doping is reported to increase the compactness of MgB{sub 2}, and modify its intergranular coupling by forming ultrathin TiB{sub 2} layer at grain boundaries. In this work, we studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} and the possibility to improve transport J{sub c} of SiC doped MgB{sub 2} by introducing Ti additive. The results suggest the Ti addition can obviously improve J{sub c} of MgB{sub 2} at lower fields and also enhance the J{sub c} of SiC doped MgB{sub 2} by improving their grain connectivity which shows serious intergranular weak-links.

  12. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü., E-mail: uozgur@vcu.edu; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2015-05-04

    The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

  13. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    International Nuclear Information System (INIS)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-01-01

    The effect of δ-doping of In 0.06 Ga 0.94 N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In 0.15 Ga 0.85 N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm 2 in the reference LED to ∼120 A/cm 2 in the LEDs with Mg δ-doped barriers

  14. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Science.gov (United States)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-05-01

    The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

  15. Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

    2006-01-01

    Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In

  16. TL and OSL studies of carbon doped magnesium aluminate (MgAl2O4:C)

    Science.gov (United States)

    Raj, Sanu S.; Mishra, D. R.; Soni, Anuj; Grover, V.; Polymeris, G. S.; Muthe, K. P.; Jha, S. K.; Tyagi, A. K.

    2016-10-01

    The MgAl2O4:C has been synthesized by using two different methods by electron gun and vacuum assisted melting of MgAl2O4 in presence of graphite. The MgAl2O4:C phosphor thus developed by these two different methods have similar types of the TL/OSL defects with multiple overlapping TL glow peaks from 100 °C to 400 °C. The Computerized Curve De-convolution Analysis (CCDA) has been used to measure TL parameters such as thermal trap depth, frequency factor and order of kinetic associated with charge transfer process in TL phenomenon. The investigated TL/OSL results show that these two methods of incorporating carbon in MgAl2O4 have generated closely resemble the defects of similar types in MgAl2O4:C lattice. However, the MgAl2O4:C synthesized by electron gun shows relatively larger concentration of the TL/OSL defects as compared to MgAl2O4:C synthesized using vacuum assisted melting method. The photo-ionization cross-section (PIC) associated with fastest OSL component of MgAl2O4: C is found to be ∼ 0.5 times than that of fastest OSL component of commercially available dosimetric grade α-Al2O3:C. The MgAl2O4:C thus developed shows good dynamic OSL dose linearity from few mGy to 1 Gy. This work reveals that MgAl2O4:C could be developed as potential tissue equivalent OSL / TL material.

  17. Enhancement of the critical current density and flux pinning of MgB2 superconductor by nanoparticle SiC doping

    Science.gov (United States)

    Dou, S. X.; Soltanian, S.; Horvat, J.; Wang, X. L.; Zhou, S. H.; Ionescu, M.; Liu, H. K.; Munroe, P.; Tomsic, M.

    2002-10-01

    Doping of MgB2 by nano-SiC and its potential for the improvement of flux pinning were studied for MgB2-x)(SiCx/2 with x=0, 0.2, and 0.3 and for 10 wt % nano-SiC-doped MgB2 samples. Cosubstitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5 K, introducing intragrain pinning centers effective at high fields and temperatures, and significantly enhancing Jc and Hirr. Compared to the undoped sample, Jc for the 10 wt % doped sample increased by a factor of 32 at 5 K and 8 T, 42 at 20 K and 5 T, and 14 at 30 K and 2 T. At 20 K and 2 T, the Jc for the doped sample was 2.4 x105 A/cm2, which is comparable to Jc values for the best Ag/Bi-2223 tapes. At 20 K and 4 T, Jc was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. The magnetic Jc is consistent with the transport Jc which remains at 20 000 A/cm2 even at 10 T and 5 K for the doped sample, an order of magnitude higher than the undoped one. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using a formula of MgBxSiyCz instead of pure MgB2.

  18. Defect Study of MgO-CaO Material Doped with CeO2

    Directory of Open Access Journals (Sweden)

    Han Zhang

    2013-01-01

    Full Text Available MgO-CaO refractories were prepared using analytical reagent chemicals of Ca(OH2 and Mg(OH2 as starting materials and CeO2 as dopant, then sintered at 1650°C for 3 h. The effect of CeO2 powders on the defect of MgO-CaO refractories was investigated. The sample characterizations were analyzed by the techniques of XRD and SEM. According to the results, with the addition of CeO2, the lattice constant of CaO increased, and the bulk density of the samples increased while apparent porosity decreased. The densification of MgO-CaO refractories was promoted obviously. In the sintering process, MgO grains grew faster than CaO, pores at the MgO-CaO grain boundaries decreased while pores in the MgO grains increased gradually, and no pores were observed in the CaO grains. The nature of the CeO2 promoting densification lies in the substitution and solution with CaO. Ce4+ approaches into CaO lattices, which enlarges the vacancy concentration of Ca2+ and accelerates the diffusion of Ca2+.

  19. Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

    2014-09-30

    Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.

  20. Degradation of selected industrial dyes using Mg-doped TiO2 polyscales under natural sun light as an alternative driving energy

    Science.gov (United States)

    Shivaraju, H. P.; Midhun, G.; Anil Kumar, K. M.; Pallavi, S.; Pallavi, N.; Behzad, Shahmoradi

    2017-11-01

    Designing photocatalytic materials with modified functionalities for the utilization of renewable energy sources as an alternative driving energy has attracted much attention in the area of sustainable wastewater treatment applications. Catalyst-assisted advanced oxidation process is an emerging treatment technology for organic pollutants and toxicants in industrial wastewater. Preparation of visible-light-responsive photocatalyst such as Mg-doped TiO2 polyscales was carried out under mild sol-gel technique. Mg-doped TiO2 polyscales were characterized by powder XRD, SEM, FTIR, and optical and photocatalytic activity techniques. The Mg-doped TiO2 showed a mixed phase of anatase and rutile with an excellent crystallinity, structural elucidations, polyscales morphology, consequent shifting of bandgap energy and adequate photocatalytic activities under visible range of light. Mg-doped TiO2 polyscales were investigated for their efficiencies in the degradation of most commonly used industrial dyes in the real-time textile wastewater. Mg-doped TiO2 polyscales showed excellent photocatalytic degradation efficiency in both model industrial dyes (65-95%) and textile wastewater (92%) under natural sunlight as an alternative and renewable driving energy.

  1. Periodic DFT study of acidic trace atmospheric gas molecule adsorption on Ca- and Fe-doped MgO(001) surface basic sites.

    Science.gov (United States)

    Baltrusaitis, Jonas; Hatch, Courtney; Orlando, Roberto

    2012-08-02

    The electronic properties of undoped and Ca- or Fe-doped MgO(001) surfaces, as well as their propensity toward atmospheric acidic gas (CO2, SO2, and NO2) uptake was investigated with an emphasis on gas adsorption on the basic MgO oxygen surface sites, O(surf), using periodic density functional theory (DFT) calculations. Adsorption energy calculations show that MgO doping will provide stronger interactions of the adsorbate with the O(surf) sites than the undoped MgO for a given adsorbate molecule. Charge transfer from the iron atom in Fe-doped MgO(001) to NO2 was shown to increase the binding interaction between adsorbate by an order of magnitude, when compared to that of undoped and Ca-doped MgO(001) surfaces. Secondary binding interactions of adsorbate oxygen atoms were observed with surface magnesium sites at distances close to those of the Mg-O bond within the crystal. These interactions may serve as a preliminary step for adsorption and facilitate further adsorbate transformations into other binding configurations. Impacts on global atmospheric chemistry are discussed as these adsorption phenomena can affect atmospheric gas budgets via altered partitioning and retention on mineral aerosol surfaces.

  2. Effect of doping and annealing on the physical properties of ZnO:Mg ...

    Indian Academy of Sciences (India)

    nescence (PL), scanning electron microscopy (SEM) and transmission ... nanoparticles show unique, size-dependent optical properties due to the ..... Mg substitute into ZnO lattice at Zn sites, instead of forming impurity compound or mag-.

  3. The impacts of growth temperature on morphologies, compositions and optical properties of Mg-doped ZnO nanomaterials by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.H., E-mail: wangxh@sdju.edu.cn [School of Mechanical Engineering, Shanghai Dianji University, 1201 Jiang Chuan Road, Shanghai 200245 (China); Huang, L.Q.; Niu, L.J.; Li, R.B. [School of Mechanical Engineering, Shanghai Dianji University, 1201 Jiang Chuan Road, Shanghai 200245 (China); Fan, D.H. [Institute of Functional Materials Research, Department of Mathematics and Physics, Wuyi University, Jiangmen 529020 (China); Zhang, F.B.; Chen, Z.W.; Wang, X.; Guo, Q.X. [Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)

    2015-02-15

    Highlights: • Mg-doped ZnO nanomaterials were fabricated by chemical vapor deposition (CVD). • Growth temperature determines the characteristics of Zn{sub 1-x}Mg{sub x}O nanomaterials. • The modulation of band gap is caused by Mg addition. - Abstract: The Mg-doped ZnO (Zn{sub 1-x}Mg{sub x}O) nanomaterials with different morphologies of nanoparticles, partially opened nanowire-on-spherical shells, hemispheric shells and chain-like nanoparticles were synthesized at 750, 850, 900 and 1000 °C by a simple chemical vapor deposition. The energy dispersive X-ray (EDX) measurements indicate that Mg content increases from 2.87 at.% to 5.01 at.% with the increase of growth temperature from 750 to 1000 °C. The measurement results of X-ray diffraction (XRD) show that the (0 0 2) peaks of Zn{sub 1-x}Mg{sub x}O nanomaterials shift to higher diffraction angle with the increase of Mg content, implying that Mg{sup 2+} is substituted into Zn{sup 2+} site. The absorption spectra at room temperature exhibit that the band gap of the Mg-doped ZnO nanomaterials increases with the Mg concentration, illustrating that the modulation of band gap is caused by Mg addition. The PL measurements show that UV peak from Zn{sub 1-x}Mg{sub x}O nanomaterials is shifted towards lower wavelength side (blue shift) from 381 nm to 372 nm with the increase of the Mg dopant content. The room-temperature Raman spectra show that the crystal quality of the Zn{sub 1-x}Mg{sub x}O nanomaterials is improved with the increase of growth temperature, and the Mg dopants do not decrease the crystal quality of ZnO nanomaterials.

  4. Synthesis of Titanium-doped MgO heteronanostructures with tunable band gap

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Urvashi; Jeevanandam, P., E-mail: jeevafcy@iitr.ernet.in, E-mail: jeevafcy@iitr.ac.in [Indian Institute of Technology Roorkee, Department of Chemistry (India)

    2016-04-15

    Ti{sub x}Mg{sub 1−x}O heteronanostructures (x = 0.02 to 0.50) have been synthesized by a novel thermal decomposition route, and the effect of concentration of titanium and calcination temperature on optical properties of the heteronanostructures has been investigated. Phase analysis using powder X-ray diffraction demonstrates the formation of mixture of MgO and MgTiO{sub 3} when x = 0.02 to 0.20 and pure MgTiO{sub 3} when x = 0.33 to 0.50. Scanning electron microscopy studies show that the Ti{sub x}Mg{sub 1−x}O samples with x = 0.02 to 0.20 consist of particles with a mixture of flower- and rod-like morphology, whereas the Ti{sub x}Mg{sub 1-x}O samples with x = 0.33 to 0.50 possess rod-like morphology. Transmission electron microscopy studies show that the flowers are in turn formed by assembly of nanoparticles and the hollow rods are formed by aggregation of dumbbell-shaped nanoparticles. Diffuse reflectance spectroscopic studies show that band gap of the Ti{sub x}Mg{sub 1−x}O heteronanostructures can be tuned from 3.2 to 4.2 eV by varying the concentration of titanium and the calcination temperature. Photoluminescence spectra show emission bands in visible and near-infrared regions due to defects present in the Ti{sub x}Mg{sub 1−x}O heteronanostructures.

  5. Synthesis of Titanium-doped MgO heteronanostructures with tunable band gap

    International Nuclear Information System (INIS)

    Sharma, Urvashi; Jeevanandam, P.

    2016-01-01

    Ti_xMg_1_−_xO heteronanostructures (x = 0.02 to 0.50) have been synthesized by a novel thermal decomposition route, and the effect of concentration of titanium and calcination temperature on optical properties of the heteronanostructures has been investigated. Phase analysis using powder X-ray diffraction demonstrates the formation of mixture of MgO and MgTiO_3 when x = 0.02 to 0.20 and pure MgTiO_3 when x = 0.33 to 0.50. Scanning electron microscopy studies show that the Ti_xMg_1_−_xO samples with x = 0.02 to 0.20 consist of particles with a mixture of flower- and rod-like morphology, whereas the Ti_xMg_1_-_xO samples with x = 0.33 to 0.50 possess rod-like morphology. Transmission electron microscopy studies show that the flowers are in turn formed by assembly of nanoparticles and the hollow rods are formed by aggregation of dumbbell-shaped nanoparticles. Diffuse reflectance spectroscopic studies show that band gap of the Ti_xMg_1_−_xO heteronanostructures can be tuned from 3.2 to 4.2 eV by varying the concentration of titanium and the calcination temperature. Photoluminescence spectra show emission bands in visible and near-infrared regions due to defects present in the Ti_xMg_1_−_xO heteronanostructures.

  6. High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

    International Nuclear Information System (INIS)

    Liu, Wei; Zhang, Qiang; Yin, Kang; Chi, Hang; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

    2013-01-01

    The study of Mg 2 Si 1−x Sn x -based thermoelectric materials has received widespread attention due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. In this research, Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y solid solutions with the nominal Bi content of 0≤y≤0.03 are prepared using a two-step solid state reaction followed by spark plasma sintering consolidation. Within this range of Bi concentrations, no evidence of second phase segregation was found. Bi is confirmed to occupy the Si/Sn sites in the crystal lattice and behaves as an efficient n-type dopant in Mg 2 Si 0.4 Sn 0.6 . Similar to the effect of Sb, Bi doping greatly increases the electron density and the power factor, and reduces the lattice thermal conductivity of Mg 2.16 Si 0.4 Sn 0.6 solid solutions. Overall, the thermoelectric figure of merit of Bi-doped Mg 2.16 Si 0.4 Sn 0.6 solid solutions is improved by about 10% in comparison to values obtained with Sb-doped materials of comparable dopant content. This improvement comes chiefly from a marginally higher Seebeck coefficient of Bi-doped solid solutions. The highest ZT∼1.4 is achieved for the y=0.03 composition at 800 K. - Graphical abstract: (a)The relationship between electrical conductivity and power factor for Sb/Bi-doped Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y (Sb/Bi) y (0 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. (c)Temperature dependent dimensionless figure of merit ZT of Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. - Highlights: • Bi doped Mg 2.16 Si 0.4 Sn 0.6 showed 15% enhancement in the power factor as compared to Sb doped samples. • Bi doping reduced κ ph of Mg 2.16 Si 0.4 Sn 0.6 due to stronger point defect scattering. • The highest ZT=1.4 at 800 K was achieved for Mg 2.16 (Si 0.4 Sn 0.6 ) 0.97 Bi 0.03

  7. Negative effects of crystalline-SiC doping on the critical current density in Ti-sheathed MgB2(SiC)y superconducting wires

    International Nuclear Information System (INIS)

    Liang, G; Fang, H; Luo, Z P; Hoyt, C; Yen, F; Guchhait, S; Lv, B; Markert, J T

    2007-01-01

    Ti-sheathed MgB 2 wires doped with nanosize crystalline-SiC up to a concentration of 15 wt% SiC have been fabricated, and the effects of the SiC doping on the critical current density (J c ) and other superconducting properties studied. In contrast with the previously reported results that nano-SiC doping with a doping range below 16 wt% usually enhances J c , particularly at higher fields, our measurements show that SiC doping decreases J c over almost the whole field range from 0 to 7.3 T at all temperatures. Furthermore, it is found that the degradation of J c becomes stronger at higher SiC doping levels, which is also in sharp contrast with the reported results that J c is usually optimized at doping levels near 10 wt% SiC. Our results indicate that these negative effects on J c could be attributed to the absence of significant effective pinning centres (mainly Mg 2 Si) due to the high chemical stability of the crystalline-SiC particles

  8. Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films

    Science.gov (United States)

    Alema, Fikadu; Reich, Michael; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-08-01

    Composition, microstructure, and dielectric properties of undoped and Ba(Mg1/3Nb2/3)O3 (BMN) doped Ba0.45Sr0.55TiO3 (BST) thin films deposited via rf. magnetron sputtering on platinized alumina substrates have been investigated. The analysis of microstructure has shown that despite the sizable effect of doping on the residual stress, the latter is partially compensated by the thermal expansion coefficient mismatch, and its influence on the BST film crystal structure is insignificant. It was revealed that BMN doped film demonstrated an average (over 2000 devices) of 52.5% tunability at 640 kV/cm, which is ˜8% lower than the value for the undoped film. This drop is associated with the presence of Mg ions in BMN; however, the effect of Mg doping is partially compensated by that of Nb ions. The decrease in grain size upon doping may also contribute to the tunability drop. Doping with BMN allows achievement of a compensation concentration yielding no free carriers and resulting in significant leakage current reduction when compared with the undoped film. In addition, the presence of large amounts of empty shallow traps related to NbTi• allows localizing free carriers injected from the contacts thus extending the device control voltage substantially above 10 V.

  9. Structure and superconductivity of double-doped Mg1-x(Al0.5Li0.5)xB2

    DEFF Research Database (Denmark)

    Xu, G.J.; Grivel, Jean-Claude; Abrahamsen, A.B.

    2003-01-01

    A series of polycrystalline samples of Mg1-x(Al0.5Li0.5)(x)B-2 (0less than or equal toxless than or equal to0.6) were prepared by a solid state reaction method and their structure, superconducting transition temperature and magneto-transport properties were investigated by means of X-ray diffract......A series of polycrystalline samples of Mg1-x(Al0.5Li0.5)(x)B-2 (0less than or equal toxless than or equal to0.6) were prepared by a solid state reaction method and their structure, superconducting transition temperature and magneto-transport properties were investigated by means of X......-ray diffraction (XRD), ac-susceptibility and resistance in varied magnetic fields. The double doping leads to decreases in both the lattice parameters a and c. The superconducting transition temperature (T-c) decreases with double doping, but the T-c is systematically higher than that of the single Al......-doped samples. It is suggested that the hole band filling has little effect on T-c at high doping level, while the disorder induced by doping plays an important role in suppressing T-c. A systematic comparison with Al-doped MgB2 of the structure, superconducting transition and irreversibility field is made. (C...

  10. Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 deg. C to 700 deg. C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films

  11. Basic performance of Mg co-doped new scintillator used for TOF-DOI-PET systems

    International Nuclear Information System (INIS)

    Kobayashi, Takahiro; Yamamoto, Seiichi; Okumura, Satoshi; Yeom, Jung Yeol; Kamada, Kei; Yoshikawa, Akira

    2017-01-01

    Phoswich depth-of-interaction (DOI) detectors utilizing multiple scintillators with different decay time are a useful device for developing a high spatial resolution, high sensitivity PET scanner. However, in order to apply pulse shape discrimination (PSD), there are not many combinations of scintillators for which phoswich technique can be implemented. Ce doped Gd_3Ga_3Al_2O_1_2 (GFAG) is a recently developed scintillator with a fast decay time. This scintillator is similar to Ce doped Gd_3Al_2Ga_3O_1_2 (GAGG), which is a promising scintillator for PET detector with high light yield. By stacking these scintillators, it may be possible to realize a high spatial resolution and high timing resolution phoswich DOI detector. Such phoswich DOI detector may be applied to time-of-flight (TOF) systems with high timing performance. Therefore, in this study, we tested the basic performance of the new scintillator –GFAG for use in a TOF phoswich detector. The measured decay time of a GFAG element of 2.9 mmx2.9 mmx10 mm in dimension, which was optically coupled to a photomultiplier tube (PMT), was faster (66 ns) than that of same sized GAGG (103 ns). The energy resolution of the GFAG element was 5.7% FWHM which was slightly worse than that of GAGG with 4.9% FWHM for 662 keV gamma photons without saturation correction. Then we assembled the GFAG and the GAGG crystals in the depth direction to form a 20 mm long phoswich element (GFAG/GAGG). By pulse shape analysis, the two types of scintillators were clearly resolved. Measured timing resolution of a pair of opposing GFAG/GAGG phoswich scintillator coupled to Silicon Photomultipliers (Si-PM) was good with coincidence resolving time of 466 ps FWHM. These results indicate that the GFAG combined with GAGG can be a candidate for TOF-DOI-PET systems.

  12. Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application.

    Science.gov (United States)

    Kalita, Himani; Pal, Pallabi; Dhara, Santanu; Pathak, Amita

    2017-02-01

    Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness=262.4MPa; elastic modulus=5800MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. Copyright © 2016 Elsevier B.V. All rights reserved.

  13. Structural study of Mg doped cobalt ferrite thin films on ITO coated glass substrate

    Science.gov (United States)

    Suthar, Mahesh; Bapna, Komal; Kumar, Kishor; Ahuja, B. L.

    2018-05-01

    We have synthesized thin films of Co1-xMgxFe2O4 (x = 0, 0.4, 0.6, 0.8, 1) on transparent conducting indium tin oxide (ITO) coated glass substrate by pulsed laser deposition method. The structural properties of the grown films were analyzed by the X-ray diffraction and Raman spectroscopy, which suggest the single phase growth of these films. Raman spectra revealed the incorporation of Mg ions into CoFe2O4 lattice and suggest that the Mg ions initially go both to the octahedral and tetrahedral sites upto a certain concentration. For higher concentration, Mg ions prefer to occupy the tetrahedral sites.

  14. Optical spectroscopy of Nd3+/Mg2+ co-doped LiTaO3 laser crystal

    International Nuclear Information System (INIS)

    Zhang, P X; Hang, Y; Gong, J; Zhao, C C; Yin, J G; Zhang, L H; Zhu, Y Y

    2013-01-01

    A Nd 3+ and Mg 2+ co-doped LiTaO 3 single crystal has been grown successfully by the Czochralski method. The polarized absorption spectra of the crystal were measured and investigated. The peak absorption cross-sections at 806 and 810 nm were 4.17 × 10 −20 cm 2 and 4.47 × 10 −20 cm 2 with a full width at half maximum of 29 and 17 nm for σ- and π-polarization, respectively. Based on the Judd–Ofelt theory, the spectral parameters of Nd 3+ in the as-grown crystal were investigated in detail. Moreover, the emission probabilities, branching ratio and radiative lifetime for the transitions from 4 F 3/2 were calculated. The radiative lifetime of 4 F 3/2 was calculated to be 159 μs and the luminescent quantum efficiency of the 4 F 3/2 manifold was about 81.13%. The results were also compared with other Nd 3+ doped crystals. (paper)

  15. Photoionization behavior of Eu2+-doped BaMgSiO4 long-persisting phosphor upon UV irradiation

    International Nuclear Information System (INIS)

    Li, Y.; Wang, Y.; Gong, Y.; Xu, X.; Zhang, F.

    2011-01-01

    Highlights: → Photoionization behavior of BaMgSiO 4 :Eu 2+ long persistent phosphor upon UV irradiation. → Green phosphorescence was obtained from BaMgSiO 4 :Eu 2+ . → The ionization of Eu 2+ to Eu 3+ was observed in BaMgSiO 4 :Eu 2+ . → The photogenerated Eu 3+ cannot change back to its divalent state at room temperature. → The phosphorescence is associated with the formation forming Eu 3+ -e - pairs. - Abstract: The fluorescence, phosphorescence and thermoluminescence properties of Eu-doped BaMgSiO 4 phosphors sintered in air and in a reducing atmosphere were investigated. Phosphorescence of phosphor sintered in a reducing atmosphere can last for 1.5 h at a recognizable intensity level, whereas phosphorescence of air-sintered phosphor can only persist for 6 min. In addition, a distinction between the shape of the fluorescence spectrum and its corresponding phosphorescence spectrum is observed in the former case. Ionization of Eu 2+ to Eu 3+ upon UV irradiation is observed in the phosphor prepared in a reducing atmosphere, but there is no indication that the photogenerated Eu 3+ cannot change back to its divalent state at room temperature after the excitation source is switched off. In addition, phosphor sintered in a reducing atmosphere shows photochromism upon UV irradiation. No such photoionization and photochromism behavior is observed for the air-sintered phosphor. A possible Eu 2+ photoionization mechanism is constructed on the basis of these experimental observations. The photoionization mechanism presented can also successfully explain the fluorescence and phosphorescence behavior of Eu in BaMgSiO 4 .

  16. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

    International Nuclear Information System (INIS)

    Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

    2004-01-01

    We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

  17. Elastic properties of Sr- and Mg-doped lanthanum gallate at elevated temperature

    Science.gov (United States)

    Okamura, T.; Shimizu, S.; Mogi, M.; Tanimura, M.; Furuya, K.; Munakata, F.

    The elastic moduli, i.e., Young's modulus, shear modulus and Poisson's ratio, of a sintered La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- δ bulk have been experimentally determined in the temperature range from room temperature to 1373 K using a resonance technique. Anomalous elastic properties were observed over a wide temperature range from 473 to 1173 K. In the results for internal friction and in X-ray diffraction measurements at elevated temperature, two varieties of structural changes were seen in La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- δ in the examined temperature range. The results agreed with the findings of a previous crystallographic study of the same composition system by Slater et al. In addition, the temperature range in which a successive structural change occurred in La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- δ was the same as that exhibiting the anomalous elastic properties. Taking all the results together, it can be inferred that the successive structural change in the significant temperature range is responsible for the elastic property anomaly of La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- δ.

  18. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel; Gnade, Bruce E.

    2017-01-01

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed

  19. Mg2+ Doped into Electro-synthesized HKUST-1 and Their Initial Hydrogen Sorption Properties

    Science.gov (United States)

    Lestari, W. W.; Ni'maturrohmah, D.; Arrozi, U. S. F.; Suwarno, H.

    2018-01-01

    The hydrogen storage materials are essentially play important roles in supporting the utilization of hydrogen as a promising alternative energy. Several innovative materials have been proposed and intensively investigated in this regard, including Metal-Organic Framework (MOFs). MOFs type HKUST-1 [Cu3(BTC)2] (BTC = benzene-tri-carboxylate) is the most explored materials in hydrogen storage. In this research, HKUST-1 was electro-synthesized under 15 volt for 1.5 h. This material was ex-situ modified with magnesium(II) ion with variation: 3, 5 and 10 wt% to add attractive sites for hydrogen to form Mg2+@HKUST-1. The final materials were characterized by XRD, FTIR, SEM-EDX, and SAA. Hydrogen sorption measurement was conducted using Sievert system at 30 and 80 °C with pressure from 0.2 to 1.5 bar in 10 minutes for each condition. According to XRD analysis, the basic structure of Mg2+@HKUST-1 was remaining stable. In contrary, SEM analysis showed that HKUST-1 morphology was changed after modification with Mg2+. In addition, the surface area of materials significantly increased from 372.112 to 757.617m2/g, based on SAA analysis. The presence of Mg2+ in the HKUST-1 increased the hydrogen sorption capacity up to 0.475 wt% at 1.4 bar at 30 °C and 0.256 wt% at 80 °C (1.4 bar).

  20. Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

    International Nuclear Information System (INIS)

    Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

    2001-01-01

    Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

  1. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  2. Electric-field gradients at the $^{111}In$ and $^{111m}Cd$ sites in undoped and Mg-doped $LiNbO_{3}$

    CERN Document Server

    Hauer, B; Marques, J G; Barradas, N P; Correia, J G; Agulló-López, F; Diéguez, E

    1995-01-01

    The quadrupole interaction of 111Cd in undoped (congruent) and Mg-doped LiNbO3 single crystals has been studied using the perturbed angular correlation technique after implantation of 111In and 111mCd. A stepwise-annealing procedure shows the lattice to be fully reconstructed at 773 K. Our results show that both In and Cd are in the Li position. Mg doping at 6 mol % does not have any effect on the lattice location of these impurities in LiNbO3.

  3. NO and NO{sub 2} adsorption on subsurface doped MgO (100) and BaO (100) surfaces. A density functional study

    Energy Technology Data Exchange (ETDEWEB)

    Añez, Rafael, E-mail: ranez@ivic.gob.ve [Laboratorio de Química Física y Catálisis Computacional, Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 21827, Caracas (Venezuela, Bolivarian Republic of); Sierraalta, Aníbal [Laboratorio de Química Física y Catálisis Computacional, Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 21827, Caracas (Venezuela, Bolivarian Republic of); Soto, Lenin J. Díaz [Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Física, 22451-900 Rio de Janeiro, RJ (Brazil); Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, CT Bloco A sala 412, Rio de Janeiro, RJ 21949-900 (Brazil)

    2017-05-15

    Highlights: • Subsurface doped BaO(100) and MgO(100) surfaces. • NO and NO{sub 2} adsorption on doped BaO(100) and MgO(100) surfaces. • Surface distortion produced by the doped improves the interaction with the surface. • NO and NO{sub 2} adsorption energies displayed good correlation with the transferred charge. - Abstract: A periodic DFT approach was used to study the energetic, electronic and structural changes produced by the V, Fe and Ni sub layer doped of the MgO (100) and BaO (100) surfaces and the effect of these changes over the adsorption of NO and NO{sub 2}. Results indicate that the higher capacity of donating charge of the transition metal atoms improves the ability of the surfaces to transfer charge to the molecules. The charge transferred goes to NO and NO{sub 2} antibonding orbitals which makes them more reactive hence the interaction becomes stronger. A good lineal correlation between the charge transferred and the calculated adsorption energy was found, that is, as the charge transferred increases the adsorption energy increases. The interaction between the NO or NO{sub 2} molecule on doped surfaces not only depends of the charge transferred, surface structural changes produced by the doping with transition metal atoms increase the adsorption energy specially on the BaO (100) surface where the surface structural changes were more noticeable. Calculated stretching frequency of a NO in a η{sup 1} –N configuration indicates that this is the most stable specie found for the adsorption of NO on terraces of the MgO (100) surface around 77 K and that the sub layer Ni doped BaO (100) surface could be a promising material for the decomposition of NO{sub 2}.

  4. On Ni/Au Alloyed Contacts to Mg-Doped GaN

    Science.gov (United States)

    Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2018-01-01

    Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

  5. Co-current Doping Effect of Nanoscale Carbon and Aluminum Nitride on Critical Current Density and Flux Pinning Properties of Bulk MgB2 Superconductors

    Science.gov (United States)

    Tripathi, D.; Dey, T. K.

    2018-05-01

    The effect of nanoscale aluminum nitride (n-AlN) and carbon (n-C) co-doping on superconducting properties of polycrystalline bulk MgB2 superconductor has been investigated. Polycrystalline pellets of MgB2, MgB2 + 0.5 wt% AlN (nano), MgB_{1.99}C_{0.01} and MgB_{1.99}C_{0.01} + 0.5 wt% AlN (nano) have been synthesized by a solid reaction process under inert atmosphere. The transition temperature (TC) estimated from resistivity measurement indicates only a small decrease for C (nano) and co-doped MgB2 samples. The magnetic field response of investigated samples has been measured at 4, 10, and 20 K in the field range ± 6 T. MgB2 pellets co-doped with 0.5 wt% n-AlN and 1 wt% n-C display appreciable enhancement in critical current density (J_C) of MgB2 in both low (≥ 3 times), as well as, high-field region (≥ 15 times). J_C versus H behavior of both pristine and doped MgB2 pellets is well explained in the light of the collective pinning model. Further, the normalized pinning force density f_p(= F_p/F_{pmax}) displays a fair correspondence with the scaling procedure proposed by Eisterer et al. Moreover, the scaled data of the pinning force density (i.e., f_p{-}h data) of the investigated pellets at different temperature are well interpreted by a modified Dew-Hughes expression reported by Sandu and Chee.

  6. Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

    Science.gov (United States)

    Raghvendra; Singh, Rajesh Kumar; Singh, Prabhakar

    2014-09-01

    One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573-873 K and in the frequency range 20 Hz-1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed.

  7. Synthesis and characterization of Sr- and Mg-doped Lanthanum gallate electrolyte materials prepared via the Pechini method

    International Nuclear Information System (INIS)

    Shi Min; Xu Yudong; Liu Anping; Liu Ning; Wang Can; Majewski, P.; Aldinger, F.

    2009-01-01

    The powders of Sr- and Mg-doped lanthanum gallate (La 0.85 Sr 0.15 Ga 0.80 Mg 0.2 O 2.825 ; LSGM) were synthesized by the Pechini method. The XRD pattern indicates that the main phase (LaGaO 3 ) exists in the uncalcined powders. The LSGM materials are composed of the main phase without secondary phases when calcined at 1400 deg. C. The LSGM materials contain fewer amounts of secondary phases than those prepared by the sol-gel method and solid-state reaction method at the same calcination temperature. TEM image of the powders indicate that the average grain size is about 80 nm. The conductivity increases with the testing temperature increasing. The curve of ln(σT) vs 1/T exists two straight lines intersecting at T* (T* is about 602 deg. C). It indicates that activation energy of oxygen-vacancy motion at lower temperatures is greater than that at higher temperatures

  8. Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

    International Nuclear Information System (INIS)

    Raghvendra; Singh, Rajesh Kumar; Singh, Prabhakar

    2014-01-01

    One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3-δ (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573-873 K and in the frequency range 20 Hz-1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed. (orig.)

  9. Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

    Energy Technology Data Exchange (ETDEWEB)

    Raghvendra; Singh, Rajesh Kumar; Singh, Prabhakar [Indian Institute of Technology (Banaras Hindu University), Department of Physics, Varanasi (India)

    2014-09-15

    One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-δ} (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573-873 K and in the frequency range 20 Hz-1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed. (orig.)

  10. Synthesis and characterization of Sr- and Mg-doped Lanthanum gallate electrolyte materials prepared via the Pechini method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Min [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China)], E-mail: shimin@mail.hf.ah.cn; Xu Yudong; Liu Anping; Liu Ning; Wang Can [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Majewski, P.; Aldinger, F. [Max-Planck-Institut fur Metallforschung, Pulvermetallurgisches Laboratorium, Heisenbergstr. 5, D-70569 Stuttgart (Germany)

    2009-03-15

    The powders of Sr- and Mg-doped lanthanum gallate (La{sub 0.85}Sr{sub 0.15}Ga{sub 0.80}Mg{sub 0.2}O{sub 2.825}; LSGM) were synthesized by the Pechini method. The XRD pattern indicates that the main phase (LaGaO{sub 3}) exists in the uncalcined powders. The LSGM materials are composed of the main phase without secondary phases when calcined at 1400 deg. C. The LSGM materials contain fewer amounts of secondary phases than those prepared by the sol-gel method and solid-state reaction method at the same calcination temperature. TEM image of the powders indicate that the average grain size is about 80 nm. The conductivity increases with the testing temperature increasing. The curve of ln({sigma}T) vs 1/T exists two straight lines intersecting at T* (T* is about 602 deg. C). It indicates that activation energy of oxygen-vacancy motion at lower temperatures is greater than that at higher temperatures.

  11. Dielectric relaxation behavior and impedance studies of Cu2+ ion doped Mg - Zn spinel nanoferrites

    Science.gov (United States)

    Choudhary, Pankaj; Varshney, Dinesh

    2018-03-01

    Cu2+ substituted Mg - Zn nanoferrites is synthesized by low temperature fired sol gel auto combustion method. The spinel nature of nanoferrites was confirmed by lab x-ray technique. Williamson - Hall (W-H) analysis estimate the average crystallite size (22.25-29.19 ± 3 nm) and micro strain induced Mg0.5Zn0.5-xCuxFe2O4 (0.0 ≤ x ≤ 0.5). Raman scattering measurements confirm presence of four active phonon modes. Red shift is observed with enhanced Cu concentration. Dielectric parameters exhibit a non - monotonous dispersion with Cu concentration and interpreted with the support of hopping mechanism and Maxwell-Wagner type of interfacial polarization. The ac conductivity of nanoferrites increases with raising the frequency. Complex electrical modulus reveals a non - Debye type of dielectric relaxation present in nanoferrites. Reactive impedance (Z″) detected an anomalous behavior and is related with resonance effect. Complex impedance demonstrates one semicircle corresponding to the intergrain (grain boundary) resistance and also explains conducting nature of nanoferrites. For x = 0.2, a large semicircle is observed revealing the ohmic nature (minimum potential drop at electrode surface). Dielectric properties were improved for nanoferrites with x = 0.2 and is due to high dielectric constant, conductivity and minimum loss value (∼0.009) at 1 MHz.

  12. Effect of annealing on luminescence of Eu{sup 3+}- and Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Medić, Mina; Antić, Željka; Đorđević, Vesna [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Ahrenkiel, Phillip S. [South Dakota School of Mines & Technology, Rapid City, SD (United States); Marinović-Cincović, Milena [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Dramićanin, Miroslav D., E-mail: dramican@vinca.rs [University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia)

    2016-02-15

    This work explores the influence of annealing temperature on the structure and luminescence of 2 at% Eu{sup 3+} and 1 at% Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanopowders produced via Pechini-type polymerized complex route. Mg{sub 2}TiO{sub 4} samples were annealed at 7 different temperatures (400 °C, 450 °C, 500 °C, 550 °C, 600 °C, 650 °C and 700 °C) to determine the temperature range in which cubic inverse spinel structure is stable and to follow the changes of material luminescence properties. X-ray diffraction revealed that crystallization of both Eu{sup 3+} and Sm{sup 3+}-doped Mg{sub 2}TiO{sub 4} nanopowders starts at 400 °C, and that Sm{sup 3+} doped Mg{sub 2}TiO{sub 4} starts to decompose at 650 °C, while Eu{sup 3+} doped Mg{sub 2}TiO{sub 4} starts to decompose at 700 °C. Samples annealed at higher temperatures show higher crystallinity and larger crystallite size. Mg{sub 2}TiO{sub 4} powder annealed at 600 °C is composed of ~5 nm size nanoparticles agglomerated in micron-size and dense chunks. The emission spectra of nanoparticles are composed of emissions from defects in Mg{sub 2}TiO{sub 4} host and characteristic emissions of Eu{sup 3+} ({sup 5}D{sub 0}→{sup 7}F{sub J}) and Sm{sup 3+} ({sup 4}G{sub 5/2}→{sup 6}H{sub J}) ions. The stronger emission and longer emission decays are observed with samples annealed at high temperatures. In the case of the Eu{sup 3+} ions emission intensity increased one order of magnitude between samples annealed at 400 °C and 650 °C. - Highlights: • Mg{sub 2}TiO{sub 4} nanoparticles of 5–10 nm in size are prepared by polymerized complex route. • Emission spectra and decays of Eu{sup 3+} and Sm{sup 3+} doped Mg{sub 2}TiO{sub 4} nanoparticles are shown. • Eu{sup 3+}(Sm{sup 3+}) doped Mg{sub 2}TiO{sub 4} can be annealed at temperatures <700 °C (650 °C). • Emission intensity of nanoparticles increases with increase of annealing temperature.

  13. Enhancement in the interfacial perpendicular magnetic anisotropy and the voltage-controlled magnetic anisotropy by heavy metal doping at the Fe/MgO interface

    Directory of Open Access Journals (Sweden)

    Takayuki Nozaki

    2018-02-01

    Full Text Available We investigated the influence of heavy metal doping at the Fe/MgO interface on the interfacial perpendicular magnetic anisotropy (PMA and the voltage-controlled magnetic anisotropy (VCMA in magnetic tunnel junctions prepared by sputtering-based deposition. The interfacial PMA was increased by tungsten doping and a maximum intrinsic interfacial PMA energy, Ki,0 of 2.0 mJ/m2 was obtained. Ir doping led to a large increase in the VCMA coefficient by a factor of 4.7 compared with that for the standard Fe/MgO interface. The developed technique provides an effective approach to enhancing the interfacial PMA and VCMA properties in the development of voltage-controlled spintronic devices.

  14. de Haas-van Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB2

    International Nuclear Information System (INIS)

    Carrington, A.; Yelland, E.A.; Fletcher, J.D.; Cooper, J.R.

    2007-01-01

    Our understanding of the superconducting properties of MgB 2 is strongly linked to our knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB 2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron-phonon coupling on each Fermi surface sheet. For the Al doped samples, we are able to measure how the band structure changes with doping. These results are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state

  15. Combined neutron and synchrotron X-ray diffraction study of Sr/Mg-doped lanthanum gallates up to high temperatures

    Science.gov (United States)

    Guenter, M. M.; Lerch, M.; Boysen, H.; Toebbens, D.; Suard, E.; Baehtz, C.

    2006-08-01

    Combined neutron diffraction and high-resolution synchrotron X-ray powder diffraction methods have been used to examine the crystal structures of two sample sets of Sr/Mg-doped Lanthanum gallate with the compositions La0.9Sr0.1Ga1-yMgyO3-0.5(0.1+y) (y=0, 0.1, 0.2) and La0.8Sr0.2Ga1-yMgyO3-0.5(0.2+y) (y=0.15, 0.2) up to 900 °C. At room temperature all samples of the first series exhibit orthorhombic structures with space group Imma: La0.9Sr0.1GaO2.95: a=5.4904(1)Å, b=7.7757(1)Å, c=5.5229(1)Å; La0.9Sr0.1Ga0.9Mg0.1O2.9: a=5.5100(1)Å, b=7.8080(1)Å, c=5.5411(1)Å; La0.9Sr0.1Ga0.8Mg0.2O2.85: a=5.5269(1)Å, b=7.8318(2)Å, c=5.5459(1)Å. The samples of the second series have the cubic perovskite structure with space group Pm3¯m at room temperature: La0.8Sr0.2Ga0.85Mg0.15O2.825: a=3.9160(1)Å; La0.8Sr0.2Ga0.8Mg0.20O2.80: a=3.9195(1)Å. Samples of the first series transform from the orthorhombic to a rhombohedral (Imma→R3¯c) structure at ˜170 °C for La0.9Sr0.1GaO2.95, at ˜430 °C for La0.9Sr0.1Ga0.9Mg0.1O2.9, and between 600 and 700 °C for La0.9Sr0.1Ga0.8Mg0.2O2.85. Both La0.8Sr0.2Ga0.85Mg0.15O2.825 and La0.8Sr0.2Ga0.8Mg0.2 show no structural deviations from the cubic aristotype over the whole temperature range. The room temperature Imma structures of the first series are justified by a domain model and are rationalized in terms of static disorder increasing with Mg content, thus driving the phase transition temperatures to higher values in agreement with tolerance factor considerations. The distortion of the rhombohedral high-temperature phases (octahedra tilting and compression) and the effect of phase transitions on the ionic conductivity are discussed.

  16. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  17. Ex-situ manufacturing of SiC-doped MgB2 used for superconducting wire in medical device applications

    Science.gov (United States)

    Herbirowo, Satrio; Imaduddin, Agung; Sofyan, Nofrijon; Yuwono, Akhmad Herman

    2017-02-01

    Magnesium diboride (MgB2) is a superconductor material with a relatively high critical temperature. Due to its relatively high critical temperature, this material is promising and has the potential to replace Nb3Sn for wire superconducting used in many medical devices. In this work, nanoparticle SiC-doped MgB2 superconducting material has been fabricated through an ex-situ method. The doping of nanoparticle SiC by 10 and 15 wt% was conducted to analyze its effect on specific resistivity of MgB2. The experiment was started by weighing a stoichiometric amount of MgB2 and nanoparticles SiC. Both materials were mixed and grounded for 30 minutes by using an agate mortar. The specimens were then pressed into a 6 mm diameter stainless steel tube, which was then reduced until 3 mm through a wire drawing method. X-ray diffraction analysis was conducted to confirm the phase, whereas the superconductivity of the specimens was analyzed by using resistivity measurement under cryogenic magnetic system. The results indicated that the commercial MgB2 showed a critical temperature of 37.5 K whereas the SiC doped MgB2 has critical temperature of 38.3 K.

  18. Influence of Mg{sup 2+} doping on the structure and electrochemical performances of layered LiNi{sub 0.6}Co{sub 0.2-x}Mn{sub 0.2}Mg{sub x}O{sub 2} cathode materials

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhenjun; Wang, Zhixing, E-mail: zxwang.csu@hotmail.com; Guo, Huajun; Li, Xinhai

    2016-06-25

    Introducing the Mg ion into host lattice is applied to improving the electrochemical performance of LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2}. The effect of Mg substitution for Co on the structure, morphology, electrochemical properties and Li{sup +} diffusion coefficients are investigated in details. Rietveld refinement results reveal that Mg is incorporated into the bulk lattice, which results in reduced cation mixing and expand c-lattice parameter. All Mg-doped sample exhibit better cycle and rate performances, although the Mg substitution for Co led to decreasing a part of capacity. The Li diffusion coefficients obtained by galvanostatic intermittent titration technique (GITT) are increased with increases of Mg content. - Highlights: • Mg-doped sample exhibits better electrochemical performance. • The change of crystal structure by Mg doping are studied. • The Mg doping improves the lithium ion diffusion coefficient.

  19. Improved Dehydrogenation Properties of 2LiNH2-MgH2 by Doping with Li3AlH6

    Directory of Open Access Journals (Sweden)

    Shujun Qiu

    2017-01-01

    Full Text Available Doping with additives in a Li-Mg-N-H system has been regarded as one of the most effective methods of improving hydrogen storage properties. In this paper, we prepared Li3AlH6 and evaluated its effect on the dehydrogenation properties of 2LiNH2-MgH2. Our studies show that doping with Li3AlH6 could effectively lower the dehydrogenation temperatures and increase the hydrogen content of 2LiNH2-MgH2. For example, 2LiNH2-MgH2-0.1Li3AlH6 can desorb 6.43 wt % of hydrogen upon heating to 300 °C, with the onset dehydrogenation temperature at 78 °C. Isothermal dehydrogenation testing indicated that 2LiNH2-MgH2-0.1Li3AlH6 had superior dehydrogenation kinetics at low temperature. Moreover, the release of byproduct NH3 was successfully suppressed. Measurement of the thermal diffusivity suggests that the enhanced dehydrogenation properties may be ascribed to the fact that doping with Li3AlH6 could improve the heat transfer for solid–solid reaction.

  20. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  1. Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

    Science.gov (United States)

    Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

    2003-08-01

    We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.

  2. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

    2008-01-01

    Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

  3. Novel Mg-Doped SrMoO3 Perovskites Designed as Anode Materials for Solid Oxide Fuel Cells

    Directory of Open Access Journals (Sweden)

    Vanessa Cascos

    2016-07-01

    Full Text Available SrMo1−xMxO3−δ (M = Fe and Cr, x = 0.1 and 0.2 oxides have been recently described as excellent anode materials for solid oxide fuel cells at intermediate temperatures (IT-SOFC with LSGM as the electrolyte. In this work, we have improved their properties by doping with aliovalent Mg ions at the B-site of the parent SrMoO3 perovskite. SrMo1−xMgxO3−δ (x = 0.1, 0.2 oxides have been prepared, characterized and tested as anode materials in single solid-oxide fuel cells, yielding output powers near 900 mW/cm−2 at 850 °C using pure H2 as fuel. We have studied its crystal structure with an “in situ” neutron power diffraction (NPD experiment at temperatures as high as 800 °C, emulating the working conditions of an SOFC. Adequately high oxygen deficiencies, observed by NPD, together with elevated disk-shaped anisotropic displacement factors suggest a high ionic conductivity at the working temperatures. Furthermore, thermal expansion measurements, chemical compatibility with the LSGM electrolyte, electronic conductivity and reversibility upon cycling in oxidizing-reducing atmospheres have been carried out to find out the correlation between the excellent performance as an anode and the structural features.

  4. Magnetic properties of Mg{sub 12}O{sub 12} nanocage doped with transition metal atoms (Mn, Fe, Co and Ni): DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Javan, Masoud Bezi, E-mail: javan.masood@gmail.com

    2015-07-01

    Binding energy of the Mg{sub 12}O{sub 12} nanocage doped with transition metals (TM=Mn, Fe, Co and Ni) in endohedrally, exohedrally and substitutionally forms were studied using density functional theory with the generalized gradient approximation exchange-correlation functional along 6 different paths inside and outside of the Mg{sub 12}O{sub 12} nanocage. The most stable structures were determined with full geometry optimization near the minimum of the binding energy curves of all the examined paths inside and outside of the Mg{sub 12}O{sub 12} nanocage. The results reveal that for all stable structures, the Ni atom has a larger binding energy than the other TM atoms. It is also found that for all complexes additional peaks contributed by TM-3d, 4s and 4p states appear in the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) gap of the host MgO cluster. The mid-gap states are mainly due to the hybridization between TM-3d, 4s and 4p orbitals and the cage π orbitals. The magnetic moment of the endohedrally doped TM atoms in the Mg{sub 12}O{sub 12} are preserved to some extent due to the interaction between the TM and Mg{sub 12}O{sub 12} nanocage, in contrast to the completely quenched magnetic moment of the Fe and Ni atoms in the Mg{sub 11}(TM)O{sub 12} complexes. Furthermore, charge population analysis shows that charge transfer occurs from TM atom to the cage for endohedrally and substitutionally doping. - Highlights: • Binding energy of the Mg{sub 12}O{sub 12} nanocage doped with transition metals was studied. • The most stable structures were determined near the minimum of the binding energy. • The encapsulated Ni atom has a larger binding energy than the other TM atoms. • Magnetic moment of the endohedrally doped TM atoms in the Mg{sub 12}O{sub 12} are preserved.

  5. Doping Experiments on Low-Dimensional Oxides and a Search for Unusual Magnetic Properties of MgAlB14

    International Nuclear Information System (INIS)

    Julienne Marie Hill

    2002-01-01

    Doping experiments on La 2 CuO 4 , Sr 2 CuO 3 and SrCu 2 (BO 3 ) 2 were performed with the intent of synthesizing new metallic low-=dimensional cuprate oxide compounds. Magnetic susceptibility χ(T) measurements on a polycrystalline La 2 CuO 4 sample chemically oxidized at room temperature in aqueous NaClO showed superconductivity with a superconducting transition temperature T c of 42.6 K and a Meissner fraction of 26%. They were unable to electrochemically oxidize La 2 CuO 4 in a nonaqueous solution of tetramethylammonium hydroxide (TMAOH) and methanol. Sr 2 CuO 3 was found to decompose upon exposure to air and water. Electron paramagnetic resonance, isothermal magnetization M(H), and χ(T) measurements on the primary decomposition product, Sr 2 Cu(OH) 6 , were consistent with a nearly isolated, spin S = 1/2, local moment model for the Cu +2 spins. From a fit of χ(T) by the Curie-Weiss law and of the M(H) isotherms by a modified Brillouin function, the weakly antiferromagnetic exchange interaction between adjacent Cu +2 spins in Sr 2 Cu(OH) 6 was found to be J/k B = 1.06(4) K. Doping studies on SrCu 2 (BO 3 ) 2 were inconclusive. χ(T) measurements on an undoped polycrystalline sample of SrCu 2 (BO 3 ) 2 , a sample treated with distilled water, and a sample treated with aqueous NaClO showed no qualitative differences between the samples. In addition, χ(T) and M(H, T) studies of the ultra-hard material MgAlB 14 were carried out in search of superconductivity or ferromagnetism in this compound. χ(T) measurements on a powder sample revealed temperature-independent diamagnetism from 1.8 K up to room temperature with a Curie-Weiss impurity concentration equivalent to ∼ 1 mol% of spin-1/2 ions. In contrast, M(H, T) data on hot pressed samples showed evidence of ferromagnetic transitions above ∼ 330 K. Scanning electron microscopy and Auger microprobe analysis of the hot pressed samples indicated that the observed ferromagnetism was likely due to Fe impurities

  6. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sellaiyan, S.; Uedono, A. [University of Tsukuba, Division of Applied Physics, Tsukuba, Ibaraki (Japan); Sivaji, K.; Janet Priscilla, S. [University of Madras, Department of Nuclear Physics, Chennai (India); Sivasankari, J. [Anna University, Department of Physics, Chennai (India); Selvalakshmi, T. [National Institute of Technology, Nanomaterials Laboratory, Department of Physics, Tiruchirappalli (India)

    2016-10-15

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F{sub 2} {sup 2+} and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F{sub 2} {sup 2+} to F{sup +} and this F{sup +} is converted into F centers at 416 nm. (orig.)

  7. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    Science.gov (United States)

    Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

    2016-10-01

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 °C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 °C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 °C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F2 2+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F2 2+ to F+ and this F+ is converted into F centers at 416 nm.

  8. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

    2016-01-01

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F_2 "2"+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F_2 "2"+ to F"+ and this F"+ is converted into F centers at 416 nm. (orig.)

  9. Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

    Science.gov (United States)

    Kurose, Noriko; Matsumoto, Kota; Yamada, Fumihiko; Roffi, Teuku Muhammad; Kamiya, Itaru; Iwata, Naotaka; Aoyagi, Yoshinobu

    2018-01-01

    A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1-2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

  10. The effect of Nd and Mg doping on the micro-Raman spectra of LiNbO3 single-crystals

    International Nuclear Information System (INIS)

    Quispe-Siccha, R; Villagran-Muniz, M; MejIa-Uriarte, E V; Jaque, D; GarcIa Sole, J; Jaque, F; Sato-Berru, R Y; Camarillo, E; Hernandez A, J; Murrieta S, H

    2009-01-01

    The LiNbO 3 congruent crystals doped with small Nd concentrations, 1 (TO 1 ) and A 1 (TO 2 ) modes, the half-width composition and the area ratio of the A 1 (TO 4 ) and E(TO 8 ) bands, we reached several conclusions about the incorporation mechanism of the Nd and Mg ions into the LiNbO 3 lattice. Likewise the Raman shift and half-width of the E(TO 1 ) and E(TO 7 ) modes were investigated in the Z direction. Results indicate that Mg and Nd ions are located in the Li site for low doping concentrations and for larger concentrations there is a replacement in both Li and Nb ion sites.

  11. Optoelectronic characterization of Eu3+ doped MLa2O4 (M = Sr, Ca, Mg nanophosphors for display devices

    Directory of Open Access Journals (Sweden)

    Devender Singh

    2015-12-01

    Full Text Available Eu3+ doped MLa2O4 (M = Mg, Ca, Sr nanophosphors were synthesized by a rapid facile gel combustion route. Luminescence properties of these prepared nanophosphors were analyzed by their excitation and emission spectra. The excitation spectrum consisted of some peaks in the 350–410 nm range due to the f–f transitions. The emission spectra of prepared nanophosphors had transitions of Eu3+ ions i.e. 5D0 → 7F0 (580 nm, 5D0 → 7F1 (594–596 nm, 5D0 → 7F2 (614–618, 628–629 nm, and 5D0 → 7F3 (650–651 nm. The main emission peak was observed at 614–618 nm of 5D0→7F2 transitions of Eu3+ ions. The enhancement in optical properties was observed when materials were reheated at higher temperatures. The nanostructural morphology was confirmed with scanning as well as transmission electron microscopy. The prepared materials were having size in the range of 10–50 nm. X-ray powder diffraction (XRD technique was used to determine the crystal structure and phase of the prepared phosphor materials. XRD measurements revealed that the crystallinity of MLa2O4 materials increased with increasing the sintering temperature. The prepared materials had bright red emitting optical properties that could be suitably applied in various display devices.

  12. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    International Nuclear Information System (INIS)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

  13. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

    1995-12-31

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

  14. The role of air annealing on the optical and scintillation properties of Mg co-doped Pr:LuAG transparent ceramics

    Czech Academy of Sciences Publication Activity Database

    Hu, Z.; Cao, M.; Chen, H.; Shi, Y.; Kou, H.; Xie, T.; Wu, L.; Pan, Y.; Feng, X.; Vedda, A.; Beitlerová, Alena; Nikl, Martin; Li, J.

    2017-01-01

    Roč. 72, Oct (2017), s. 201-207 ISSN 0925-3467 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : Mg co-doped Pr:LuAG * transparent ceramics * annealing effect * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.238, year: 2016

  15. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  16. Mesoporous carbon-coated LiFePO4 nanocrystals co-modified with graphene and Mg2+ doping as superior cathode materials for lithium ion batteries.

    Science.gov (United States)

    Wang, Bo; Xu, Binghui; Liu, Tiefeng; Liu, Peng; Guo, Chenfeng; Wang, Shuo; Wang, Qiuming; Xiong, Zhigang; Wang, Dianlong; Zhao, X S

    2014-01-21

    In this work, mesoporous carbon-coated LiFePO4 nanocrystals further co-modified with graphene and Mg(2+) doping (G/LFMP) were synthesized by a modified rheological phase method to improve the speed of lithium storage as well as cycling stability. The mesoporous structure of LiFePO4 nanocrystals was designed and realized by introducing the bead milling technique, which assisted in forming sucrose-pyrolytic carbon nanoparticles as the template for generating mesopores. For comparison purposes, samples modified only with graphene (G/LFP) or Mg(2+) doping (LFMP) as well as pure LiFePO4 (LFP) were also prepared and investigated. Microscopic observation and nitrogen sorption analysis have revealed the mesoporous morphologies of the as-prepared composites. X-ray diffraction (XRD) and Rietveld refinement data demonstrated that the Mg-doped LiFePO4 is a single olivine-type phase and well crystallized with shortened Fe-O and P-O bonds and a lengthened Li-O bond, resulting in an enhanced Li(+) diffusion velocity. Electrochemical properties have also been investigated after assembling coin cells with the as-prepared composites as the cathode active materials. Remarkably, the G/LFMP composite has exhibited the best electrochemical properties, including fast lithium storage performance and excellent cycle stability. That is because the modification of graphene provided active sites for nuclei, restricted the in situ crystallite growth, increased the electronic conductivity and reduced the interface reaction current density, while, Mg(2+) doping improved the intrinsically electronic and ionic transfer properties of LFP crystals. Moreover, in the G/LFMP composite, the graphene component plays the role of "cushion" as it could quickly realize capacity response, buffering the impact to LFMP under the conditions of high-rate charging or discharging, which results in a pre-eminent rate capability and cycling stability.

  17. Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1983-01-01

    of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

  18. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  19. Infrared emissions in MgSrAl10O17:Er3+ phosphor co-doped with Yb3+/Ba2+/Ca2+ obtained by solution combustion route

    International Nuclear Information System (INIS)

    Singh, Vijay; Kumar Rai, Vineet; Venkatramu, V.; Chakradhar, R.P.S.; Hwan Kim, Sang

    2013-01-01

    An intense infrared emitting MgSrAl 10 O 17 :Er 3+ phosphor co-doped with Yb 3+ , Ba 2+ and Ca 2+ ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl 10 O 17 phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed upon excitation at 980 nm. Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: ► The hexagonal phase of MgSrAl 10 O 17 could be obtained by the low temperature combustion method. ► The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed. ► Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ were reported.

  20. Correlation of infrared spectra and phase transitions in annealed proton-exchanged MgO doped LiNbO3

    International Nuclear Information System (INIS)

    Sun, Jian; Xu, Chang-qing

    2015-01-01

    Infrared spectra of OH − groups in annealed proton-exchanged (APE) 5 mol. % MgO-doped LiNbO 3 (MgO:LiNbO 3 ) crystals were studied using the Fourier transform infrared spectroscopy technique. Samples were prepared by benzoic acid proton-exchange followed with thermal annealing in oxygen. Evolutions of absorption peaks in APE MgO:LiNbO 3 crystals were recorded and analyzed. Comparing with none-doped APE LiNbO 3 crystals, a different phase transition behavior was found during thermal annealing. A periodically poled MgO:LiNbO 3 slab waveguide was prepared using identical procedures, and the second harmonic generation (SHG) signals were measured. Comparing the obtained SHG results with the infrared spectra, relationships between the phase transitions and the recovery of second-order nonlinear coefficients during thermal annealing were investigated. Finally, a method for optimizing the performance of MgO:LiNbO 3 waveguides was proposed

  1. Enhanced J c property in nano-SiC doped thin MgB2/Fe wires by a modified in situ PIT process

    International Nuclear Information System (INIS)

    Jiang, C.H.; Nakane, T.; Hatakeyama, H.; Kumakura, H.

    2005-01-01

    A modified in situ PIT process, which included a short time pre-annealing and intermediate drawing step in the conventional in situ PIT process, was employed to fabricate thin round MgB 2 /Fe wires from MgH 2 and B powders. The pores and cracks resulted from the MgH 2 decomposition during the pre-annealing were effectively eliminated by the intermediate drawing step, which subsequently increased the core density and J c property of final heat treated wires. A higher reduction rate after the pre-annealing led to a larger enhancement in J c within this study. The reproducibility of our new process on the J c improvement in MgB 2 wires was confirmed in two series of wires doped with 5 mol% or 10 mol% nano-SiC particles separately

  2. Hydrogen incorporation in high hole density GaN:Mg

    Science.gov (United States)

    Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Doolittle, W. Alan

    2011-03-01

    We investigate hydrogen passivation in heavily doped p-type GaN using electron paramagnetic resonance (EPR) spectroscopy. Samples include both conventionally grown GaN (1019 cm-3 Mg, 1017 cm-3 holes) and films grown by metal modulation epitaxy (MME), which yielded higher Mg (1- 4 x 1020 cm-3) and hole (1- 40 x 1018 cm-3) densities than found in conventionally grown GaN. The Mg acceptor signal is monitored throughout 30 minute annealing steps in N2 :H2 (92%:7%)) and subsequently pure N2 . N2 :H2 heat treatments of the lower hole density films begin to reduce the Mg EPR intensity at 750 o C, but quench the signal in high hole density films at 600 o C. Revival of the signal by subsequent N2 annealing occurs at 800 o C for the low hole density material and 600 o C in MME GaN. The present work highlights chemical differences between heavily Mg doped and lower doped films; however, it is unclear whether the difference is due to changes in hydrogen-Mg complex formation or hydrogen diffusion. The work at UAB is supported by the NSF.

  3. Influence of milling parameters on the sorption properties of the LiH–MgB{sub 2} system doped with TiCl{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Busch, Nina; Jepsen, Julian; Pistidda, Claudio [Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, D-21502 Geesthacht (Germany); Puszkiel, Julián A. [Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, D-21502 Geesthacht (Germany); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Combatientes de Malvinas 3150, 1427 Buenos Aires (Argentina); Karimi, Fahim [Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, D-21502 Geesthacht (Germany); Milanese, Chiara [Pavia H_2 Lab, Department of Chemistry, Physical Chemistry Division, University of Pavia, Viale Taramelli 16, I-27100 Pavia (Italy); Tolkiehn, Martin [SRXPD Beamline HASYLAB, Deutsches-Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Chaudhary, Anna-Lisa, E-mail: anna-lisa.chaudhary@hzg.de [Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, D-21502 Geesthacht (Germany); Klassen, Thomas; Dornheim, Martin [Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, D-21502 Geesthacht (Germany)

    2015-10-05

    Highlights: • The LiH–MgB{sub 2} system was doped with TiCl{sub 3} and milling conditions varied. • A heuristic model was used to estimate energy transfer from milling conditions. • Milling parameters were correlated with the energy transfer calculation. • 20 kJ g{sup −1} of energy transfer correlates to the optimum conditions for the system. - Abstract: Hydrogen sorption properties of the LiH–MgB{sub 2} system doped with TiCl{sub 3} were investigated with respect to milling conditions (milling times, ball to powder (BTP) ratios, rotation velocities and degrees of filling) to form the reactive hydride composite (RHC) LiBH{sub 4}–MgH{sub 2}. A heuristic model was applied to approximate the energy transfer from the mill to the powders. These results were linked to experimentally obtained quantities such as crystallite size, specific surface area (SSA) and homogeneity of the samples, using X-ray diffraction (XRD), the Brunauer–Emmett–Teller (BET) method and scanning electron microscopy (SEM), respectively. The results show that at approximately 20 kJ g{sup −1} there are no further benefits to the system with an increase in energy transfer. This optimum energy transfer value indicates that a plateau was reached for MgB{sub 2} crystallite size therefore the there was also no improvement of reaction kinetics due to no change in crystallite size. Therefore, this study shows that an optimum energy transfer value was reached for the LiH–MgB{sub 2} system doped with TiCl{sub 3}.

  4. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

    Science.gov (United States)

    Imura, Masataka; Tsuda, Shunsuke; Takeda, Hiroyuki; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2018-03-01

    The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3N:Mg, respectively) epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. Here three samples with different Mg concentrations ([Mg] = 0, 7 × 1019, and 4 × 1020 cm-3) are chosen for comparison. It is found that a large downward energy band bending exists in all samples due to the formation of a surface electron accumulation (SEA) layer. For u-In0.7Ga0.3N epilayer, band bending as large as 0.8 ± 0.05 eV occurs from bulk to surface. Judged from the valence band spectral edge and numerical analysis of energy band with a surface quantum well, the valence band maximum (VBM) with respect to Fermi energy (EF) level in the bulk is determined to be 1.22 ± 0.05 eV. In contrast, for In0.7Ga0.3N:Mg epilayers, the band bending increases and the VBM only in the bulk tends to shift toward the EF level owing to the Mg acceptor doping. Hence, the energy band is considered to exhibit a downward bending structure due to the coexistence of the n+ SEA layer and Mg-doped p layer formed in the bulk. When [Mg] changes from 7 × 1019 to 4 × 1020 cm-3, the peak split occurs in HX-PES spectra under the bulk sensitive condition. This result indicates that the energy band forms an anomalous downward bending structure with a singular point due to the generation of a thin depleted region at the n+ p interface. For In0.7Ga0.3N:Mg epilayers, the VBM in the bulk is assumed to be slightly lower than EF level within 0.1 eV.

  5. Surface excess on MgO-doped TiO{sub 2} nanoparticles; Segregacao superficial de MgO em nanoparticulas de TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Gouvea, D.; Viana, B.H.; Miagava, J., E-mail: dgouvea@usp.br, E-mail: bhernardov@gmail.com, E-mail: joice.mgv@gmail.com [Universidade de Sao Paulo (USP), SP (Brazil). Dept. de Engenharia Metalurgica e de Materiais. Lab. de Processos Ceramicos

    2016-10-15

    Anatase has been the subject of several recent investigations partly as consequence of its interesting catalytic properties. Additives such as MgO have been introduced to improve the performance of the photocatalytic TiO{sub 2}. However, the physical-chemistry of these oxides systems and their relationship with properties are poorly understood. In this work, nanoparticles of xMgO-(1-x)TiO{sub 2} (0≤ x≤ 0.05) were synthesized by the polymeric precursor method at 500 °C for 15 h. XRD results showed that only anatase phase was obtained and the crystallite size decreases with increased MgO concentration. Magnesia surface excess was calculated by washing powders with HNO{sub 3} and the soluble Mg ions concentration determined by chemical analysis. FTIR analysis confirms that the acid washing modified the particle surface. Therefore, it is proposed that the reduction of the crystallite size occurs due to segregation of MgO on TiO{sub 2} nanoparticles surfaces. (author)

  6. The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

    Science.gov (United States)

    Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

    2018-04-01

    We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

  7. Study on the water durability of zinc boro-phosphate glasses doped with MgO, Fe2O3, and TiO2

    Science.gov (United States)

    Hwang, Moon Kyung; Ryu, Bong Ki

    2016-07-01

    The water durability of zinc boro-phosphate (PZB) glasses with the composition 60P2O5-20ZnO-20B2O3- xMeO ( x = 0, 2, 4, 6 and MeO = MgO, Fe2O3, or TiO2) (mol%) was measured, and PZB glass was studied in terms of its thermal properties, density, and FTIR characteristics. The surface conditions and corrosion byproducts were analyzed using scanning electron microscopy. When MgO, Fe2O3, and TiO2 were doped into the PZB glass, Q2 was decreased and Q1 was increased in the phosphate structure, while the number of BO4 structures increased with increasing MeO content. The density of the PZB glass was increased by the addition of Fe2O3 and TiO2, while the glass transition temperature ( T g ) and dilatometric softening temperature ( T d ) were increased when additional MgO, Fe2O3, and TiO2 were added. From the weight loss analysis (95 ◦ C, 96 h), TiO2 doped glass showed the lowest weight loss (1.70 × 10 -3 g/cm2) while MgO doped glass showed the highest value (2.44 × 10 -3 g/cm2), compared with PZB glass (3.07 × 10 -3 g/cm2). These results were discussed in terms of the Me n+ ions in the glass structure, and their different coordination numbers and bonding strengths.

  8. Significantly enhanced critical current density in nano-MgB2 grains rapidly formed at low temperature with homogeneous carbon doping

    International Nuclear Information System (INIS)

    Liu, Yongchang; Lan, Feng; Ma, Zongqing; Chen, Ning; Li, Huijun; Barua, Shaon; Patel, Dipak; Shahriar, M; Hossain, Al; Kim, Jung Ho; Dou, Shi Xue; Acar, S

    2015-01-01

    High performance MgB 2 bulks using carbon-coated amorphous boron as a boron precursor were fabricated by Cu-activated sintering at low temperature (600 °C, below the Mg melting point). Dense nano-MgB 2 grains with a high level of homogeneous carbon doping were formed in these MgB 2 samples. This type of microstructure can provide a stronger flux pinning force, together with depressed volatility and oxidation of Mg owing to the low-temperature Cu-activated sintering, leading to a significant improvement of critical current density (J c ) in the as-prepared samples. In particular, the value of J c for the carbon-coated (Mg 1.1 B 2 )Cu 0.05 sample prepared here is even above 1 × 10 5 A cm −2 at 20 K, 2 T. The results herein suggest that the combination of low-temperature Cu-activated sintering and employment of carbon-coated amorphous boron as a precursor could be a promising technique for the industrial production of practical MgB 2 bulks or wires with excellent J c , as the carbon-coated amorphous boron powder can be produced commercially at low cost, while the addition of Cu is very convenient and inexpensive. (paper)

  9. Significantly enhanced critical current density in nano-MgB2 grains rapidly formed at low temperature with homogeneous carbon doping

    Science.gov (United States)

    Liu, Yongchang; Lan, Feng; Ma, Zongqing; Chen, Ning; Li, Huijun; Barua, Shaon; Patel, Dipak; Shahriar, M.; Hossain, Al; Acar, S.; Kim, Jung Ho; Xue Dou, Shi

    2015-05-01

    High performance MgB2 bulks using carbon-coated amorphous boron as a boron precursor were fabricated by Cu-activated sintering at low temperature (600 °C, below the Mg melting point). Dense nano-MgB2 grains with a high level of homogeneous carbon doping were formed in these MgB2 samples. This type of microstructure can provide a stronger flux pinning force, together with depressed volatility and oxidation of Mg owing to the low-temperature Cu-activated sintering, leading to a significant improvement of critical current density (Jc) in the as-prepared samples. In particular, the value of Jc for the carbon-coated (Mg1.1B2)Cu0.05 sample prepared here is even above 1 × 105 A cm-2 at 20 K, 2 T. The results herein suggest that the combination of low-temperature Cu-activated sintering and employment of carbon-coated amorphous boron as a precursor could be a promising technique for the industrial production of practical MgB2 bulks or wires with excellent Jc, as the carbon-coated amorphous boron powder can be produced commercially at low cost, while the addition of Cu is very convenient and inexpensive.

  10. The effect of MgO doping on the structure, magnetic and magnetotransport properties of La0.8Sr0.2MnO3 composite

    International Nuclear Information System (INIS)

    Aezami, A.; Eshraghi, M.; Kameli, P.; Salamati, H.

    2007-01-01

    Full text: The recent observation of anomalously Colossal Magnetoresistance (CMR) in the La 1-x A x MnO 3 (A = Sr, Ca, Ba or vacancies) system, has spurred renewed interest in studying these doped perovskite manganites. The properties of these materials are explained by double exchange theory of Zener and electron lattice interaction. However, the intrinsic CMR effect in the perovskite manganites is found on a magnetic field scale of several teslas and a narrow temperature range. It was found that, the presence of grain boundaries in polycrystalline samples leads to a large Low Field Magnetoresistance (LFMR) effect over a wide temperature range below the Curie temperature Tc. To achieve LFMR, different properties are considered. One of them is mixing of these CMR materials with secondary insulator phases. In this work, La 0.8 Sr 0.2 MnO 3 (LSMO) was selected as matrix material and MgO as a dopant. The La 0.8 Sr 0.2 MnO 3/x MgO samples with x= 0, 1, 2, 3, 5 and 7.5 Wt.% were prepared by Solid State Reaction method. Studies show that most part of the MgO goes into the perovskite lattice and Mg substituted Mn in LSMO and remainder segregates as a separate phase at the grain boundaries. Results also show that the value of MR decreases for all the doping levels. It seems that, due to the almost same ionic radii of Mg2+ and Mn2+, and at the higher sintering temperature, Mg2+ mostly replaced Mn3+ and weakens double exchange interaction. This speculation has been confirmed by XRD, SEM, susceptibility, resistivity and magnetoresistance analysis and measurements. (authors)

  11. Synthesis of pure and Sr-doped LaGaO3, LaFeO3 and LaCoO3 and Sr,Mg-doped LaGaO3 for ITSOFC application using different wet chemical routes

    International Nuclear Information System (INIS)

    Kumar, M.; Srikanth, S.; Ravikumar, B.; Alex, T.C.; Das, S.K.

    2009-01-01

    Pure and Sr-doped LaGaO 3 , LaFeO 3 and LaCoO 3 and Sr,Mg-doped LaGaO 3 were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere

  12. Correlated photon-pair generation in a periodically poled MgO doped stoichiometric lithium tantalate reverse proton exchanged waveguide

    NARCIS (Netherlands)

    Lobino, M.; Marshall, G.D.; Xiong, C.; Clark, A.S.; Bonneau, D.; Natarajan, C.M.; Tanner, M.G.; Hadfield, R.H.; Dorenbos, S.N.; Zijlstra, T.; Zwiller, V.; Marangoni, M.; Ramponi, R.; Thompson, M.G.; Eggleton, B.J.; O'Brien, J.L.

    2011-01-01

    We demonstrate photon-pair generation in a reverse proton exchanged waveguide fabricated on a periodically poled magnesium doped stoichiometric lithium tantalate substrate. Detected pairs are generated via a cascaded second order nonlinear process where a pump laser at wavelength of 1.55 ?m is first

  13. Effect of Mg.sup.2+./sup. co-doping on the scintillation performance of LuAG:Ce ceramics

    Czech Academy of Sciences Publication Activity Database

    Liu, S.; Feng, X.; Zhou, Z.; Nikl, Martin; Shi, Y.; Pan, Y.

    2014-01-01

    Roč. 8, č. 1 (2014), s. 105-109 ISSN 1862-6254 R&D Projects: GA MŠk LH12185 Institutional support: RVO:68378271 Keywords : Lu 3 Al 5 O 12 ceramics * cerium doping * acceptor levels * luminescence centers Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.142, year: 2014

  14. Photocatalytic and electrochemical performance of three-Dimensional reduced graphene Oxide/WS{sub 2}/Mg-doped ZnO composites

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Weiwei [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Chen, Xi’an [Zhejiang Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325027 (China); Mei, Wei [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Chen, Chuansheng, E-mail: 1666423158@qq.com [College of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114 (China); Tsang, Yuenhong [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077 (China)

    2017-04-01

    Highlights: • 3D graphene oxide/WS{sub 2}/Mg-doped ZnO composites were prepared by electrostatic self-assembly and coprecipitation methods. • A significant photocatalytic activity enhancement of rGWMZ was observed. • The enhancement for photocatalytic activity is ascribed to the synergistic effect of rGO and WS{sub 2} nanosheets. - Abstract: To improve the dispersion of reduced graphene oxide and enhance the photocatalytic property of reduced graphene oxide/Mg-doped ZnO composites (rGMZ), the reduced graphene oxide/WS{sub 2}/Mg-doped ZnO composites (rGWMZ) were prepared by electrostatic self-assembly and coprecipitation methods. The effects of mass ratio of WS{sub 2} nanosheets to reduced graphene oxide (WS{sub 2}/rGO wt.%) and calcination temperature on the photocatalytic and electrochemical property of rGWMZ composites were investigated. Experimental results showed that the photocatalytic efficiency of rGWMZ composites is three-fold compared with that of rGMZ composites when the WS{sub 2}/rGO wt.% is 20.8% and calcination temperature is 500 °C, in which the degradation ratio Rhodamin B (RhB) can reach 95% within 15 min under the UV light and 90% within 90 min under simulated solar light. In addition, the rGWMZ show larger capacitance and smaller resistance than rGMZ. The enhancement for photocatalytic activity and electrochemical performance of rGWMZ is ascribed to improving the specific surface area, electrical conductivity and electronic storage capability because of the synergistic effect of rGO and WS{sub 2} nanosheets.

  15. Synthesis and structural studies of Mg doped LiNi0.5Mn0.5O2 cathode materials for lithium-ion batteries

    Science.gov (United States)

    Murali, N.; Margarette, S. J.; Madhuri Sailaja, J.; Kondala Rao, V.; Himakar, P.; Kishore Babu, B.; Veeraiah, V.

    2018-02-01

    Layered Mg doped LiNi0.5Mn0.5O2 materials have been synthesized by sol-gel method. The physical properties of these materials were examined by XRD, FESEM and FT-IR studies. From XRD patterns, the phase formation of α-NaFeO2 layered structure with R\\bar 3m space group is confirmed. The surface morphology of the synthesized materials has been examined by FESEM analysis in which the average particle size is found to be about 2 - 2.5 µm. These materials show some changes in the local ion environment, as examined by FT-IR studies.

  16. Higher-order quasi-phase matched second harmonic generation in periodically poled MgO-doped stoichiometric LiTaO3

    International Nuclear Information System (INIS)

    Yu, Nan Ei; Kurimura, Sunao; Kitamura, Kenji

    2005-01-01

    A periodically poled device was investigated by using fourth-order quasi-phase-matched (QPM) second harmonic generation (SHG) in MgO-doped stoichiometric lithium tantalate (LiTaO 3 ). The effective nonlinear coefficient was found be 2.4 pm/V by using fourth-order QPM SHG at the fundamental wavelength of 1064 nm. For first-order QPM SHG, the effective value of d 33 could be 9.2 pm/V. Using the sensitive higher-order QPM SHG method, we investigated the relationship between the domain duty ratio and the conversion efficiency.

  17. XPS studies of Mg doped GDC (Ce0.8Gd0.2O2-δ) for IT-SOFC

    Science.gov (United States)

    Tyagi, Deepak; Rao, P. Koteswara; Wani, B. N.

    2018-04-01

    Fuel Cells have gained much attention as efficient and environment friendly device for both stationary as well as mobile applications. For intermediate temperature SOFC (IT-SOFC), ceria based electrolytes are the most promising one, due to their higher ionic conductivity at relatively lower temperatures. Gd doped ceria is reported to be having the highest ionic conductivity. In the present work, Mg is codoped along with Gd and the electronic structure of the constituents is studied by XPS. XPS confirm that the Cerium is present in +4 oxidation state only which indicates that electronic conduction can be completely avoided.

  18. The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

    International Nuclear Information System (INIS)

    Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

    2017-01-01

    Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

  19. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

    Science.gov (United States)

    Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

    2015-05-01

    We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  20. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Ezzedini, Maher, E-mail: maher.ezz7@gmail.com [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia); Sfaxi, Larbi, E-mail: sfaxi.larbi@yahoo.fr [Sousse University, High School of Sciences and Technology of Hammam Sousse (Tunisia); M’Ghaieth, Ridha, E-mail: ridha.mghaieth@fsm.rnu.tn [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia)

    2017-01-15

    Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp{sub 2}Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp{sub 2}Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp{sub 2}Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.

  1. Mg shallow doping effects on the ac magnetic self-heating characteristics of γ-Fe2O3 superparamagnetic nanoparticles for highly efficient hyperthermia

    Science.gov (United States)

    Jang, Jung-tak; Bae, Seongtae

    2017-10-01

    The effects of Mg doping on the magnetic and AC self-heating temperature rising characteristics of γ-Fe2O3 superparamagnetic nanoparticles (SPNPs) were investigated for hyperthermia applications in biomedicine. The doping concentration of nonmagnetic Mg2+ cation was systematically controlled from 0 to 0.15 at. % in Mgx-γFe2O3 SPNPs during chemically and thermally modified one-pot thermal decomposition synthesis under bubbling O2/Ar gas mixture. It was empirically observed that the saturation magnetization (Ms) and the out-of-phase magnetic susceptibility ( χm″)of Mgx-γFe2O3 SPNPs were increased by increasing the Mg2+ cation doping concentration from 0.05 to 0.13 at. %. Correspondingly, the AC magnetically induced self-heating temperature (Tac,max) in solid state and the intrinsic loss power in water were increased up to 184 °C and 14.2 nH m2 kg-1 (Mgx-γFe2O3, x = 0.13), respectively, at the biologically and physiologically safe range of AC magnetic field (Happl × fappl = 1.2 × 109 A m-1 s-1). All the chemically and physically analyzed results confirmed that the dramatically improved AC magnetic induction heating characteristics and the magnetic properties of Mgx-γFe2O3 SPNPs (x = 0.13) are primarily due to the significantly enhanced magnetic susceptibility (particularly, χm″) and the improved AC/DC magnetic softness (lower AC/DC magnetic anisotropy) resulting from the systematically controlled nonmagnetic Mg2+ cation concentrations and distributions (occupation ratio) in the Fe vacancy sites of γ-Fe2O3 (approximately 12% vacancy), instead of typically well-known Fe3O4 (no vacancy) SPNPs. The cell viability and biocompatibility with U87 MG cell lines demonstrated that Mgx-γFe2O3 SPNPs (x = 0.13) has promising bio-feasibility for hyperthermia agent applications.

  2. Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)₅/(GaN)₁ superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

    Science.gov (United States)

    Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

    2014-10-23

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

  3. Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

    Science.gov (United States)

    Zhong, Hong-Xia; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Huang, Pu; Ding, Yi-Min

    2014-10-01

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm-3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

  4. Influence of Mg doping on ZnO nanoparticles decorated on graphene oxide (GO) crumpled paper like sheet and its high photo catalytic performance under sunlight

    Science.gov (United States)

    Labhane, P. K.; Sonawane, S. H.; Sonawane, G. H.; Patil, S. P.; Huse, V. R.

    2018-03-01

    Mg doped ZnO nanoparticles decorated on graphene oxide (GO) sheets were synthesized by a wet impregnation method. The effect of Mg doping on ZnO and ZnO-GO composite has been evaluated by using x-ray diffraction (XRD), Williamson-Hall Plot (Wsbnd H Plot), field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDX). The physical parameters of as-prepared samples were estimated by XRD data. FESEM and HR-TEM images showed the uniform distribution of nanoparticles on GO crumpled paper like sheet. Solar light photocatalytic activities of samples were evaluated spectrophotometrically by the degradation of p-nitrophenol (PNP) and indigo carmine (IC) solution. Mgsbnd ZnO decorated on GO sheets exhibit excellent catalytic efficiency compared to all other prepared samples under identical conditions, degrading PNP and IC nearly 99% within 60 min under sunlight. The effective degradation by Mgsbnd ZnO decorated on GO sheet would be due to extended solar light absorption, enhanced adsorptivity on the composite catalyst surface and efficient charge separation of photo-induced electrons. Finally, plausible mechanism was suggested with the help of scavengers study.

  5. Sol-Gel Derived Mg-Based Ceramic Scaffolds Doped with Zinc or Copper Ions: Preliminary Results on Their Synthesis, Characterization, and Biocompatibility

    Directory of Open Access Journals (Sweden)

    Georgios S. Theodorou

    2016-01-01

    Full Text Available Glass-ceramic scaffolds containing Mg have shown recently the potential to enhance the proliferation, differentiation, and biomineralization of stem cells in vitro, property that makes them promising candidates for dental tissue regeneration. An additional property of a scaffold aimed at dental tissue regeneration is to protect the regeneration process against oral bacteria penetration. In this respect, novel bioactive scaffolds containing Mg2+ and Cu2+ or Zn2+, ions known for their antimicrobial properties, were synthesized by the foam replica technique and tested regarding their bioactive response in SBF, mechanical properties, degradation, and porosity. Finally their ability to support the attachment and long-term proliferation of Dental Pulp Stem Cells (DPSCs was also evaluated. The results showed that conversely to their bioactive response in SBF solution, Zn-doped scaffolds proved to respond adequately regarding their mechanical strength and to be efficient regarding their biological response, in comparison to Cu-doped scaffolds, which makes them promising candidates for targeted dental stem cell odontogenic differentiation and calcified dental tissue engineering.

  6. Effect of temperature on the structural, linear, and nonlinear optical properties of MgO-doped graphene oxide nanocomposites

    Science.gov (United States)

    Kimiagar, Salimeh; Abrinaei, Fahimeh

    2018-01-01

    Magnesium oxide (MgO)-graphene oxide (GO) nanocomposites were prepared by the hydrothermal method at different temperatures. The effect of growth temperature on the structural, linear, and nonlinear optical (NLO) parameters was investigated. The decoration of MgO on GO sheets was confirmed by X-ray diffraction, scanning electron microscopy, Fourier transform infrared, and UV-visible (UV-vis) spectroscopy analyses. The energy band-gaps of MgO-GO nanocomposites were calculated from UV-vis spectrum using Tauc plot. The NLO parameters of MgO-GO nanocomposites were calculated for the first time by the simple Z-scan technique with nanosecond Nd:YAG laser at 532 nm. The nonlinear absorption coefficient β and nonlinear refractive index n2 for MgO-GO nanocomposites at the laser intensity of 1.1×108 W/cm2 were measured to be in the order of 10-7 cm/W and 10-12 cm2/W, respectively. The third-order NLO susceptibility of MgO-GO nanocomposites was measured in the order of 10-9 esu. The results showed that MgO-GO structures have negative nonlinearity as well as good nonlinear two-photon absorption at 532 nm. Furthermore, the NLO parameters increased by the enhancement of the growth temperature. As the investigation of new materials plays an important role in the advancement of optoelectronics, MgO-GO nanocomposites possess potential applications in NLO devices.

  7. Luminescence properties of the Mg co–doped Ce:SrHfO_3 ceramics prepared by the Spark Plasma Sintering Method

    International Nuclear Information System (INIS)

    Chiba, Hiroyuki; Kurosawa, Shunsuke; Harata, Koichi; Murakami, Rikito; Yamaji, Akihiro; Ohashi, Yuji; Pejchal, Jan; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

    2016-01-01

    1300 or 1400 °C pre–sintered Al/Ce/Mg:SrHfO_3 and Al/Ce:SrHfO_3 ceramics were prepared by the Spark Plasma Sintering (SPS) in order to search for a new scintillation material with a high–effective atomic number(Z_e_f_f) and good light output. The SrHfO_3 has a high Z_e_f_f of 60, and high gamma–ray detection efficiency is expected. Meanwhile it has a high melting point of over 2500 °C, and single crystal is hard to be grown. On the other hand, high melting materials can be prepared as ceramics, and the SPS method is a simple process to fabricate the ceramics within a few hours. Thus, we prepared the samples using the SPS method, and their optical and scintillation properties were investigated. We found that Al/Ce/Mg:SrHfO_3 and Al/Ce:SrHfO_3 ceramics had an emission wavelength at around 400 nm originating from 5d–4f transition of Ce"3"+. Moreover, Al/Ce/Mg:SrHfO_3 pre-sintered at a temperature of 1400 °C had a light output of approximately 5,000 ph/MeV. In this paper, the light output of Mg-co-doped samples was improved compared with the Mg-free ones. The light output also depends on the pre-sintering temperature. - Highlights: • Luminescence Properties of Al/Ce/Mg:SrHfO_3 ceramics scintillator was investigated. • These ceramics were prepared by the Spark Plasma Sintering Method. • Light output of the Al/Ce/Mg:SrHfO_3 ceramics was approximately 5,000 ph/MeV.

  8. Enhanced hydrogen generation by hydrolysis of Mg doped with flower-like MoS2 for fuel cell applications

    Science.gov (United States)

    Huang, Minghong; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Shao, Huaiyu; Zhu, Min

    2017-10-01

    In this work, flower-like MoS2 spheres are synthesized via a hydrothermal method and the catalytic activity of the as-prepared and bulk MoS2 on hydrolysis of Mg is systematically investigated for the first time. The Mg-MoS2 composites are prepared by ball milling and the hydrogen generation performances of the composites are investigated in 3.5% NaCl solution. The experimental results suggest that the as-prepared MoS2 exhibits better catalytic effect on hydrolysis of Mg compared to bulk MoS2. In particular, Mg-10 wt% MoS2 (as-prepared) composite milled for 1 h shows the best hydrogen generation properties and releases 90.4% of theoretical hydrogen generation capacity within 1 min at room temperature. The excellent catalytic effect of as-prepared MoS2 may be attributed to the following aspects: three-dimensional flower-like MoS2 architectures improve its dispersibility on Mg particles; make the composite more reactive; hamper the generated Mg(OH)2 from adhering to the surface of Mg; and increase the galvanic corrosion of Mg. In addition, a hydrogen generator based on the hydrolysis reaction of Mg-0.2 wt% MoS2 composite is manufactured and it can supply a maximum hydrogen flow rate of 2.5 L/min. The findings here demonstrate the as-prepared flower-like MoS2 can be a promising catalyst for hydrogen generation from Mg.

  9. Mg doped Li2FeSiO4/C nanocomposites synthesized by the solvothermal method for lithium ion batteries.

    Science.gov (United States)

    Kumar, Ajay; Jayakumar, O D; Jagannath; Bashiri, Parisa; Nazri, G A; Naik, Vaman M; Naik, Ratna

    2017-10-14

    A series of porous Li 2 Fe 1-x Mg x SiO 4 /C (x = 0, 0.01, 0.02, 0.04) nanocomposites (LFS/C, 1Mg-LFS/C, 2Mg-LFS and 4Mg-LFS/C) have been synthesized via a solvo-thermal method using the Pluronic P123 polymer as an in situ carbon source. Rietveld refinement of the X-ray diffraction data of Li 2 Fe 1-x Mg x SiO 4 /C composites confirms the formation of the monoclinic P2 1 structure of Li 2 FeSiO 4 . The addition of Mg facilitates the growth of impurity-free Li 2 FeSiO 4 with increased crystallinity and particle size. Despite having the same percentage of carbon content (∼15 wt%) in all the samples, the 1Mg-LFS/C nanocomposite delivered the highest initial discharge capacity of 278 mA h g -1 (∼84% of the theoretical capacity) at the C/30 rate and also exhibited the best rate capability and cycle stability (94% retention after 100 charge-discharge cycles at 1C). This is attributed to its large surface area with a narrow pore size distribution and a lower charge transfer resistance with enhanced Li-ion diffusion coefficient compared to other nanocomposites.

  10. Influence of the cooling rate on the main factors affecting current-carrying ability in pure and SiC-doped MgB2 superconductors

    International Nuclear Information System (INIS)

    Shcherbakova, O V; Pan, A V; Soltanian, S; Dou, S X; Wexler, D

    2007-01-01

    We have systematically studied and compared the effect of cooling rate on microstructure, critical current density, upper critical field and irreversibility field in pure and 10 wt% SiC-added MgB 2 superconductors. The sintering process was carried out on the samples at a temperature of 750 deg. C for 1 h followed by quenching or cooling to room temperature in 0.3 h (2433 deg. C h -1 ), 14 h (52 deg. C h -1 ) and 25 h (30 deg. C h -1 ). Changes in the microstructure due to variations in cooling rate have been studied with the help of scanning and transmission electron microscopy. Correlations between microstructure and superconducting properties have been observed, identified and explained for both pure and SiC-added MgB 2 samples. Modifications to the pinning environment and grain boundary transparency are considered to be responsible for variations in the current-carrying ability. The dominant pinning on grain boundaries in the pure MgB 2 samples and on nano-inclusions (inducing accompanying defects) in the SiC-doped samples is clearly distinguished. On the basis of our experimental results, we have concluded that the cooling rate can be an important parameter influencing the superconducting properties of MgB 2 samples

  11. Performance enhancement of perovskite solar cells with Mg-doped TiO2 compact film as the hole-blocking layer

    International Nuclear Information System (INIS)

    Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

    2015-01-01

    In this letter, we report perovskite solar cells with thin dense Mg-doped TiO 2 as hole-blocking layers (HBLs), which outperform cells using TiO 2 HBLs in several ways: higher open-circuit voltage (V oc ) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO 2 as compared to TiO 2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V oc . In addition, the Mg-modulated TiO 2 with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device

  12. Complete sets of elastic constants and photoelastic coefficients of pure and MgO-doped lithium niobate crystals at room temperature

    International Nuclear Information System (INIS)

    Andrushchak, A. S.; Laba, H. P.; Yurkevych, O. V.; Mytsyk, B. G.; Solskii, I. M.; Kityk, A. V.; Sahraoui, B.

    2009-01-01

    This paper presents the results of ultrasonic measurements of LiNbO 3 and LiNbO 3 :MgO crystals. The tensors of piezoelectric coefficients, elastic stiffness constants, and elastic compliances are determined for both crystals at room temperature. Combining these data with the results of piezo-optical measurements, a complete set of photoelastic tensor coefficients is also calculated. Doping of LiNbO 3 crystals by MgO does not lead to a considerable modification of their elastic and photoelastic properties. However, LiNbO 3 :MgO is characterized by a considerably higher resistance with respect to powerful light radiation, making it promising for future application in acousto-optic devices that deal with superpowerful laser radiation. Presented here are the complete tensor sets of elastic constants and photoelastic coefficients of LiNbO 3 and LiNbO 3 :MgO crystals that may be used for a geometry optimization of acousto-optical interaction providing the best diffraction efficiency of acousto-optical cells made of these materials.

  13. Enhancement of the mechanoluminescence properties on Ca2MgSi2O7:Dy3+ phosphor by co-doping of charge compensator ions

    Science.gov (United States)

    Sahu, Ishwar Prasad

    2016-08-01

    In the present article, effect of charge compensator ions (R+ = Li+, Na+ and K+) on dysprosium-doped di-calcium magnesium di-silicate (Ca2MgSi2O7:Dy3+) phosphors were investigated. The Ca2MgSi2O7:Dy3+ and Ca2MgSi2O7:Dy3+, R+ phosphors, were prepared by solid-state reaction method. The crystal structures of sintered phosphors were an akermanite-type structure which belongs to the tetragonal crystallography. The peaks of mechanoluminescence (ML) intensity were increased linearly with increasing impact velocity of the moving piston. Thus, present investigation indicates that the piezoelectricity was responsible to produce ML in prepared phosphors. The time of the peak ML intensity and the decay rate did not change significantly with respect to increasing impact velocity. Addition of charge compensator ions enhances the luminescence intensity of prepared Ca2MgSi2O7:Dy3+ phosphors, because they neutralize the charge generated by Dy3+ substitution for Ca2+ ions. The role of Li+ ions among all charge compensator ions (Na+ or K+) used was found to be most effective for enhanced Dy3+ ion emission. These ML materials can be used in the devices such as stress sensor, fracture sensor, impact sensor, damage sensors, safety management monitoring system and fuse system for army warheads.

  14. Energy scaling and extended tunability of terahertz wave parametric oscillator with MgO-doped near-stoichiometric LiNbO3 crystal.

    Science.gov (United States)

    Wang, Yuye; Tang, Longhuang; Xu, Degang; Yan, Chao; He, Yixin; Shi, Jia; Yan, Dexian; Liu, Hongxiang; Nie, Meitong; Feng, Jiachen; Yao, Jianquan

    2017-04-17

    A widely tunable, high-energy terahertz wave parametric oscillator based on 1 mol. % MgO-doped near-stoichiometric LiNbO3 crystal has been demonstrated with 1064 nm nanosecond pulsed laser pumping. The tunable range of 1.16 to 4.64 THz was achieved. The maximum THz wave output energy of 17.49 μJ was obtained at 1.88 THz under the pump energy of 165 mJ/pulse, corresponding to the THz wave conversion efficiency of 1.06 × 10-4 and the photon conversion efficiency of 1.59%, respectively. Moreover, under the same experimental conditions, the THz output energy of TPO with MgO:SLN crystal was about 2.75 times larger than that obtained from the MgO:CLN TPO at 1.60 THz. Based on the theoretical analysis, the THz energy enhancement mechanism in the MgO:SLN TPO was clarified to originate from its larger Raman scattering cross section and smaller absorption coefficient.

  15. Microstructure and electric characteristics of AETiO3 (AE=Mg, Ca, Sr doped CaCu3Ti4O12 thin films prepared by the sol–gel method

    Directory of Open Access Journals (Sweden)

    Dong Xu

    2015-10-01

    Full Text Available This paper focuses on the effects of alkline-earth metal titante AETiO3 (AE=Mg, Ca, Sr doping on the microstructure and electric characteristics of CaCu3Ti4O12 thin films prepared by the sol–gel method. The results showed that the grain size of CCTO thin films could be increased by MgTiO3 doping. The movement of the grain boundaries was impeded by the second phases of CaTiO3 and SrTiO3 concentrating at grain boundaries in CaTiO3 and SrTiO3 doped CCTO thin films. Rapid ascent of dielectric constant could be observed in 0.1Mg TiO3 doped CCTO thin films, which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed. In addition, the nonlinear coefficient (α, threshold voltage (VT and leakage current (IL of AETiO3 doped CCTO thin films (AE=Mg, Ca, Sr showed different variation with the increasing content of the MgTiO3, CaTiO3 and SrTiO3.

  16. Sorption properties and reversibility of Ti(IV) and Nb(V)-fluoride doped-Ca(BH4)2-MgH2 system

    International Nuclear Information System (INIS)

    Bonatto Minella, Christian; Garroni, Sebastiano; Pistidda, Claudio; Baró, Maria Dolors; Gutfleisch, Oliver; Klassen, Thomas; Dornheim, Martin

    2015-01-01

    Highlights: • Faster desorption reaction for doped materials vs. the pure composite system. • Kinetic improvement concerning re-hydrogenation reaction showed by the addition of NbF 5 . • Full characterization of the de-hydrogenation reaction pathway by means of both SR-PXD and 11 B{ 1 H} MAS-NMR. • Study of the evolution of the chemical state of the additives upon both milling and sorption reactions. - Abstract: In the last decade, alkaline and alkaline earth metal tetrahydroborates have been the focuses of the research due to their high gravimetric and volumetric hydrogen densities. Among them, Ca(BH 4 ) 2 and the Ca(BH 4 ) 2 + MgH 2 reactive hydride composites (RHC), were calculated to have the ideal thermodynamic properties which fall within the optimal range for mobile applications. In this study, the addition of NbF 5 or TiF 4 to the Ca(BH 4 ) 2 + MgH 2 reactive hydride composite system was attempted aiming to obtain a full reversible system with the simultaneous suppression of CaB 12 H 12 . Structural characterization of the specimens was performed by means of in-situ Synchrotron Radiation Powder X-ray diffraction (SR-PXD) and 11 B{ 1 H} Solid State Magic Angle Spinning-Nuclear Magnetic Resonance (MAS-NMR). The evolution of the chemical state of the Nb- and Ti-based additives was monitored by X-ray Absorption Near Edge Structure (XANES). The addition of NbF 5 or TiF 4 to the Ca(BH 4 ) 2 + MgH 2 system have not suppressed completely the formation of CaB 12 H 12 and only a slight improvement concerning the reversible reaction was displayed just in the case of Nb-doped composite material

  17. Effect of temperature on the structural, linear, and nonlinear optical properties of MgO-doped graphene oxide nanocomposites

    Directory of Open Access Journals (Sweden)

    Kimiagar Salimeh

    2018-01-01

    Full Text Available Magnesium oxide (MgO-graphene oxide (GO nanocomposites were prepared by the hydrothermal method at different temperatures. The effect of growth temperature on the structural, linear, and nonlinear optical (NLO parameters was investigated. The decoration of MgO on GO sheets was confirmed by X-ray diffraction, scanning electron microscopy, Fourier transform infrared, and UV-visible (UV-vis spectroscopy analyses. The energy band-gaps of MgO-GO nanocomposites were calculated from UV-vis spectrum using Tauc plot. The NLO parameters of MgO-GO nanocomposites were calculated for the first time by the simple Z-scan technique with nanosecond Nd:YAG laser at 532 nm. The nonlinear absorption coefficient β and nonlinear refractive index n2 for MgO-GO nanocomposites at the laser intensity of 1.1×108 W/cm2 were measured to be in the order of 10−7 cm/W and 10−12 cm2/W, respectively. The third-order NLO susceptibility of MgO-GO nanocomposites was measured in the order of 10−9 esu. The results showed that MgO-GO structures have negative nonlinearity as well as good nonlinear two-photon absorption at 532 nm. Furthermore, the NLO parameters increased by the enhancement of the growth temperature. As the investigation of new materials plays an important role in the advancement of optoelectronics, MgO-GO nanocomposites possess potential applications in NLO devices.

  18. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  19. A novel double perovskite tellurate Eu3+-doped Sr2MgTeO6 red-emitting phosphor with high thermal stability

    Science.gov (United States)

    Liang, Jingyun; Zhao, Shancang; Yuan, Xuexia; Li, Zengmei

    2018-05-01

    A series of novel double perovskite tellurate red-emitting phosphors Sr2MgTeO6:xEu3+ (x = 0.05-0.40) were successfully synthesized by a high-temperature solid-state reaction method. The phase structure, photoluminescence properties and thermal stability of the phosphor were investigated in detail. The phosphor shows dominant emission peak at 614 nm belonging to the 5D0 → 7F2 electric dipole transition under 465 nm excitation. The luminescence intensity keeps increasing with increasing the content of Eu3+ to 25 mol%, and the critical transfer distance of Eu3+ was calculated to be 12 Å. The quenching temperature for Sr2MgTeO6:0.25Eu3+ was estimated to be above 500 K. This spectral feature reveals high color purity and excellent chromaticity coordinate characteristics. Therefore, Eu3+-doped Sr2MgTeO6 phosphors are potential red phosphors for blue chip-based white light-emitting diode and display devices.

  20. Synthesis and photoluminescence of Eu3+ and Mn2+ doped double phosphates KMLa(PO4)2 (M = Zn, Mg)

    International Nuclear Information System (INIS)

    Pan Yuexiao; Zhang Qinyuan; Jiang Zhonghong

    2006-01-01

    Two compounds, KMgLa(PO 4 ) 2 and KZnLa(PO 4 ) 2 doped with Eu 3+ and Mn 2+ ions, have been synthesized by a conventional solid-state method at 850 deg. C. Structures of KMgLa(PO 4 ) 2 and KZnLa(PO 4 ) 2 have been investigated and confirmed by X-ray diffraction and photoluminescence spectra. The results indicate that the compounds have remained the monoclinic structure of LaPO 4 with space group of C s when (K + , Mg 2+ ) or (K + , Zn 2+ ) could substitute half of the La 3+ ions. Under an ultraviolet source, KMgLa(PO 4 ) 2 :Mn 2+ has shown a bright red phosphorescent color, while KZnLa(PO 4 ) 2 :Mn 2+ has shown an orange-red emission which is assigned to the electronic transition of 4 T 1 ( 4 G)- 6 A 1 ( 6 S) of Mn 2+ in strong crystal field

  1. Superlattice structure of Ce{sup 3+}-doped BaMgF{sub 4} fluoride crystals - x-ray diffraction, electron spin-resonance, and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Yamaga, M.; Hattori, K. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu (Japan); Kodama, N. [Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University, Akita (Japan); Ishizawa, N. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai (Japan)

    2001-09-14

    The x-ray diffraction patterns for Ce{sup 3+}-doped BaMgF{sub 4} (BMF) crystals suggest the existence of superlattice structure. The superlattice model is consistent with the characterization of the 4f{sup 1} ground state of Ce{sup 3+} as a probe ion using the electron spin-resonance (ESR) technique. The distinct Ce{sup 3+} luminescence spectra with different peak energies and lifetimes also support the superlattice model. Although the detailed superlattice structure could not be analysed using the diffraction spots, a model has been proposed, taking into account the eight Ce{sup 3+} polyhedra with different anion coordinations in the unit cell of the BMF crystal obtained from the ESR experiments. (author)

  2. The Improvement of Dehydriding the Kinetics of NaMgH3 Hydride via Doping with Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Zhong-Min Wang

    2016-12-01

    Full Text Available NaMgH3 perovskite hydride and NaMgH3–carbon nanomaterials (NH-CM composites were prepared via the reactive ball-milling method. To investigate the catalytic effect of CM on the dehydriding kinetic properties of NaMgH3 hydride, multiwall carbon nanotubes (MWCNTs and graphene oxide (GO were used as catalytic additives. It was found that dehydriding temperatures and activation energies (ΔE1 and ΔE2 for two dehydrogenation steps of NaMgH3 hydride can be greatly reduced with a 5 wt. % CM addition. The NH–2.5M–2.5G composite presents better dehydriding kinetics, a lower dehydriding temperature, and a higher hydrogen-desorbed amount (3.64 wt. %, 638 K. ΔE1 and ΔE2 can be reduced by about 67 kJ/mol and 30 kJ/mol, respectively. The results suggest that the combination of MWCNTs and GO is a better catalyst as compared to MWCNTs or GO alone.

  3. Influence of Mg doping on the behaviour of polaronic light-induced absorption in LiNbO3

    International Nuclear Information System (INIS)

    Conradi, D.; Merschjann, C.; Schoke, B.; Imlau, M.; Corradi, G.; Polgar, K.

    2008-01-01

    Transient light-induced absorption changes α li (t), caused by optically generated small polarons, are investigated in LiNbO 3 :Mg below and above the optical-damage-resistance threshold (ODRT). The lifetime of α li (t) is reduced by three orders of magnitude above the ODRT while a significantly enhanced amplitude α max li is observed in the infrared. Our observations are in full accordance with the predictions of microscopic models for the ODRT, namely the removal of Nb Li antisite defects upon incorporation of Mg ions, and an enhanced dark conductivity. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  4. Synthesis of pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} for ITSOFC application using different wet chemical routes

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India); Srikanth, S. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India)], E-mail: s_srikanth_99@yahoo.com; Ravikumar, B.; Alex, T.C.; Das, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

    2009-02-15

    Pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere.

  5. Electrochemical performance of La-doped Sr{sub 2}MgMoO{sub 6-{delta}} in natural gas

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yuan [Texas Materials Institute, ETC 9.102, The University of Texas at Austin, Austin, TX 78712 (United States); College of Physics, Jilin University, 2519 Jiefang Road, Changchun 130023, Jilin Province (China); Huang, Yun-Hui; Goodenough, John B. [Texas Materials Institute, ETC 9.102, The University of Texas at Austin, Austin, TX 78712 (United States); Ying, Jie-Rong [Texas Materials Institute, ETC 9.102, The University of Texas at Austin, Austin, TX 78712 (United States); Institute of Nuclear and New Energy Technology, Tsinghua University, P.O. Box 1021, Beijing 102201 (China)

    2007-08-15

    Modification of the double perovskite Sr{sub 2}MgMoO{sub 6-{delta}} by La substitution has shown that Sr{sub 2-x}La{sub x}MgMoO{sub 6-{delta}} with 0.6 {<=} x {<=} 0.8 has better performance as the anode of a solid oxide fuel cell. With a Sr{sub 1.2}La{sub 0.8}MgMoO{sub 6-{delta}} anode, LSGM electrolyte, SrCo{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} cathode, and a La{sub 0.5}Ce{sub 0.4}O{sub 1.7-{delta}} buffer layer between the anode and the electrolyte, a maximum power density of 550 mW/cm{sup 2} has been obtained for a SOFC operating on wet methane (3%H{sub 2}O) at 800 C. The performance of the SOFC using C{sub 2}H{sub 6} fuel, like that of CH{sub 4}, changes little on switching from dry C{sub 2}H{sub 6} to 3% H{sub 2}O/C{sub 2}H{sub 6}, but improvement with wet C{sub 3}H{sub 8} shows that some steam will need to be added to a moderately desulfurized natural-gas fuel. (author)

  6. Structural characteristics of Mg-doped (1-x)(K0.5Na0.5)NbO3-xLiSbO3 lead-free ceramics as revealed by Raman spectroscopy

    International Nuclear Information System (INIS)

    Zhu, W L; Meng, Y; Pezzotti, G; Zhu, J L; Wang, M S; Zhu, B; Zhu, X H; Zhu, J G; Xiao, D Q

    2011-01-01

    This paper presents a Raman spectroscopic study of compositional-change-induced structure variation and of the related mechanism of Mg doping in LiSbO 3 (LS)-modified (K 0.5 Na 0.5 )NbO 3 (KNN) ceramics. With increasing LS content from 0 to 0.06, a discontinuous shift towards higher wavenumbers was found for the band position of the A 1g (v 1 ) stretching mode of KNN, accompanied by a clearly nonlinear broadening of this band and a decrease in its intensity. Such morphological changes in the Raman spectrum result from two factors: (i) changes in polarizability/binding strength of the O-Nb-O vibration upon incorporation of Li ions in the KNN perovskitic structure and (ii) a polymorphic phase transition (PPT) from orthorhombic to tetragonal (O → T) phase at x > 0.04. Upon increasing the amount, w, of Mg dopant incorporated into the (1-x)KNN-xLS ceramic structure, the intensity of the Raman bands are enhanced, while the peak position and the full width at half maximum of the A 1g (v 1 ) mode was found to experience a clear dependence on both w and x. Raman characterization revealed that the mechanism of Mg doping is strongly correlated with the concentration of Li in the perovskite structure: Mg 2+ ions will preferentially replace Li + ions for low Mg doping while replace K/Na ions for higher doping of Mg. The PPT O → T was also found to be altered by the introduction of Mg and the critical value of LS concentration, x O-T , for incipient O → T transition in the KNN-xLS-wMT system was strongly dependent on Mg content, with x O→T being roughly equal to 0.04 + 2w, for the case of dilute Mg alloying. (paper)

  7. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  8. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  9. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  10. Effect of Mg co-doping on cathodoluminescence properties of LuGAGG:Ce single crystalline garnet films

    Czech Academy of Sciences Publication Activity Database

    Schauer, Petr; Lalinský, Ondřej; Kučera, M.; Lučeničová, Z.; Hanuš, M.

    2017-01-01

    Roč. 72, OCT (2017), s. 359-366 ISSN 0925-3467 R&D Projects: GA ČR(CZ) GA16-05631S; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : multicomponent garnet film * LuGAGG:Ce,Mg * liquid phase epitaxy * cathodoluminescence * scintillator * electron detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Electrical and electronic engineering Impact factor: 2.238, year: 2016

  11. Solvothermal synthesis of Mg-doped Li2FeSiO4/C nanocomposite cathode materials for lithium-ion batteries

    Science.gov (United States)

    Kumar, Ajay; Jayakumar, O. D.; Naik, V. M.; Nazri, G. A.; Naik, R.

    Lithium transition metal orthosilicates, such as Li2FeSiO4 and Li2MnSiO4, as cathode material have attracted much attention lately due to their high theoretical capacity ( 330 mAh/g), low cost, and environmental friendliness. However, they suffer from poor electronic conductivity and slow lithium ion diffusion in the solid phase. Several cation-doped orthosilicates have been studied to improve their electrochemical performance. We have synthesized partially Mg-substituted Li2Mgx Fe1-x SiO4-C, (x = 0.0, 0.01, 0.02, and 0.04) nano-composites by solvothermal method followed by annealing at 600oC in argon flow. The structure and morphology of the composites were characterized by XRD, SEM and TEM. The surface area and pore size distribution were measured by using N2 adsorption/desorption curves. The electrochemical performance of the Li2MgxFe1-x SiO4-C composites was evaluated by Galvanostatic cycling against metallic lithium anode, electrochemical impedance spectroscopy, and cyclic voltammetry. Li2Mg0.01Fe0.99SiO4-C sample shows a capacity of 278 mAh/g (at C/30 rate in the 1.5-4.6 V voltage window) with an excellent rate capability and stability, compared to the other samples. We attribute this observation to its higher surface area, enhanced electronic conductivity and higher lithium ion diffusion coefficient.

  12. CoO-doped MgO-Al2O3-SiO2-colored transparent glass-ceramics with high crystallinity

    Science.gov (United States)

    Tang, Wufu; Zhang, Qian; Luo, Zhiwei; Yu, Jingbo; Gao, Xianglong; Li, Yunxing; Lu, Anxian

    2018-02-01

    To obtain CoO-doped MgO-Al2O3-SiO2 (MAS)-colored transparent glass-ceramics with high crystallinity, the glass with the composition 21MgO-21Al2O3-54SiO2-4B2O3-0.2CoO (in mol %) was prepared by conventional melt quenching technique and subsequently thermal treated at several temperatures. The crystallization behavior of the glass, the precipitated crystalline phases and crystallinity were analyzed by X-ray diffraction (XRD). The microstructure of the glass-ceramics was characterized by field emission scanning electron microscopy (FSEM). The transmittance of glass-ceramic was measured by UV spectrophotometer. The results show that a large amount of α-cordierite (indianite) with nano-size was precipitated from the glass matrix after treatment at 1020 °C for 3 h. The crystallinity of the transparent glass-ceramic reached up to 97%. Meanwhile, the transmittance of the glass-ceramic was 74% at 400 nm with a complex absorption band from 450 nm to 700 nm. In addition, this colored transparent glass-ceramic possessed lower density (2.469 g/cm3), lower thermal expansion coefficient (1.822 × 10-6 /℃), higher Vickers hardness (9.1 GPa) and higher bending strength (198 MPa) than parent glass.

  13. Sorption properties and reversibility of Ti(IV) and Nb(V)-fluoride doped-Ca(BH{sub 4}){sub 2}-MgH{sub 2} system

    Energy Technology Data Exchange (ETDEWEB)

    Bonatto Minella, Christian, E-mail: christian.minella@kit.edu [Institute for Metallic Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Technische Universität Dresden, D-01062 Dresden (Germany); Garroni, Sebastiano [Dipartimento di Chimica e Farmacia, Universitá di Sassari and INSTM, Via Vienna 2, I-07100 Sassari (Italy); Pistidda, Claudio [Institute of Materials Research, Materials Technology, Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung GmbH, Max Planck Str. 1, D-21502 Geesthacht (Germany); Baró, Maria Dolors [Departament de Física, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Spain); Gutfleisch, Oliver [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 16, 64287 Darmstadt (Germany); Klassen, Thomas; Dornheim, Martin [Institute of Materials Research, Materials Technology, Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung GmbH, Max Planck Str. 1, D-21502 Geesthacht (Germany)

    2015-02-15

    Highlights: • Faster desorption reaction for doped materials vs. the pure composite system. • Kinetic improvement concerning re-hydrogenation reaction showed by the addition of NbF{sub 5}. • Full characterization of the de-hydrogenation reaction pathway by means of both SR-PXD and {sup 11}B{"1H} MAS-NMR. • Study of the evolution of the chemical state of the additives upon both milling and sorption reactions. - Abstract: In the last decade, alkaline and alkaline earth metal tetrahydroborates have been the focuses of the research due to their high gravimetric and volumetric hydrogen densities. Among them, Ca(BH{sub 4}){sub 2} and the Ca(BH{sub 4}){sub 2} + MgH{sub 2} reactive hydride composites (RHC), were calculated to have the ideal thermodynamic properties which fall within the optimal range for mobile applications. In this study, the addition of NbF{sub 5} or TiF{sub 4} to the Ca(BH{sub 4}){sub 2} + MgH{sub 2} reactive hydride composite system was attempted aiming to obtain a full reversible system with the simultaneous suppression of CaB{sub 12}H{sub 12}. Structural characterization of the specimens was performed by means of in-situ Synchrotron Radiation Powder X-ray diffraction (SR-PXD) and {sup 11}B{"1H} Solid State Magic Angle Spinning-Nuclear Magnetic Resonance (MAS-NMR). The evolution of the chemical state of the Nb- and Ti-based additives was monitored by X-ray Absorption Near Edge Structure (XANES). The addition of NbF{sub 5} or TiF{sub 4} to the Ca(BH{sub 4}){sub 2} + MgH{sub 2} system have not suppressed completely the formation of CaB{sub 12}H{sub 12} and only a slight improvement concerning the reversible reaction was displayed just in the case of Nb-doped composite material.

  14. Ferromagnetism in 4H-GaN polytype doped by non-magnetic light elements Li, Be, B, C, O, F, Ne, Na, and Mg: Ab-initio study

    International Nuclear Information System (INIS)

    Torrichi, M.; Ferhat, M.; Bouhafs, B.

    2016-01-01

    Using density-functional theory within the generalized-gradient approximation, we explore the magnetic behavior induced by nonmagnetic impurity X atoms, such as Li, Be, B, C, O, F, Ne, Na, and Mg on cation site in 4H-GaN polytype. The results reveal that Ne doped 4H-GaN has the highest magnetic moment of 3µ B , whereas Mg doped 4H-GaN has the lowest magnetic moment of 0.75µ B . Among the systems studied 4H-GaN doped Ne has been found to be half-metallic, whereas 4H-GaN doped F and Na are found to be nearly half-metallic. The partial density of states evidence that magnetism is achieved through a p-p like coupling between the impurity and the host 2p states. Furthermore, we inspect whether there exists a relationship between the spin-polarization and the local structure around the doping X atoms. It is found that for all the compounds studied, the total magnetic moment increases with increasing the X–N bond lengths. Interestingly, 4H-GaN:Be becomes ferromagnetic with increasing the Be–N bond length, whereas 4H-GaN:Na and 4H-GaN:F become half-metallic with increasing Na–N and F–N bond lengths. - Highlights: • The partial densities of states of 4H-GaN polytype doped light nonmagnetic elements have been investigated. • We found that 4H-GaN:Ne is half metallic. • We found that N atoms induced strong local magnetic. • We found that doping with half-filled X-s impurity states promotes ferromagnetism. • We found that doping with full-filled X-s impurity annihilates ferromagnetism.

  15. Synthesize and electrochemical characterization of Mg-doped Li-rich layered Li[Li0.2Ni0.2Mn0.6]O2 cathode material

    International Nuclear Information System (INIS)

    Wang, Dan; Huang, Yan; Huo, Zhenqing; Chen, Li

    2013-01-01

    Highlights: • Layered Li[Li 0.2 Ni 0.2−x Mn 0.6−x Mg 2x ]O 2 (2x = 0, 0.01, 0.02, 0.05) were synthetized. • Li[Li 0.2 Ni 0.2−x Mn 0.6−x Mg 2x ]O 2 exhibit enhanced electrochemical properties. • The improved performance is attributed to enhanced structure stability. -- Abstract: Mg-doped Li[Li 0.2 Ni 0.2 Mn 0.6 ]O 2 as a Li-rich cathode material of lithium-ion batteries were prepared by co-precipitation method and ball-milling treatment using Mg(OH) 2 as a dopant. Scanning electron microscopy (SEM), ex situ X-ray powder diffraction (XRD), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and galvantatic charge/discharge were used to investigate the effect of Mg doping on structure and electrochemical performance. Compared with the bare material, Mg-doped materials exhibit better cycle stabilities and superior rate capabilities. Li[Li 0.2 Ni 0.195 Mn 0.595 Mg 0.01 ]O 2 displays a high reversible capacity of 226.5 mAh g −1 after 60 cycles at 0.1 C. The excellent cycle performance can be attributed to the improvement in structure stability, which is verified by XRD tests before and after 60 cycles. EIS results show that Mg doping decreases the charge-transfer resistance and enhances the reaction kinetics, which is considered to be the major factor for higher rate performance

  16. Removal of H2S from Biogas by Iron (Fe3+ Doped MgO on Ceramic Honeycomb Catalyst using Double Packed Columns System

    Directory of Open Access Journals (Sweden)

    Juntima Chungsiriporn

    2010-03-01

    Full Text Available Hydrogen sulfide is a toxic and corrosive in nature, gas should be safely removed from the biogas streams before subjecting into the fuel cell. Fe3+ doped magnesium oxide was synthesized using sol-gel technique and dip coating process of Fe3+ doped MgO on foam ceramic honeycomb. XRD and SEM indicate that Fe3+ in Fe3+ doped MgO on foam ceramic honeycomb catalyst is finely dispersed in the MgO support. Performance of the synthesized Fe3+ doped magnesium oxide on the honeycomb catalyst was examined for hydrogen sulfide (H2S oxidation by double packed column scrubbers. The absorption column was used for H2S scrubbing from biogas by deionized water absorption and catalytic column was used as catalyst bed for degradation of absorbed H2S in scrubbing water. In the catalytic column, counter current flow of the scrubbing water and air through the catalyst pack was performed for H2S oxidation accompany with catalyst regeneration. System capacity for H2S removal from gas stream showed 98% constant along 3 hr testing time at room temperature.

  17. Electrical properties of Sb and Cr-doped PbZrO3-PbTiO3-PbMg1/3Nb2/3O3 ceramics

    OpenAIRE

    Whatmore, Roger W.; Molter, O.; Shaw, Christopher P.

    2003-01-01

    The pyroelectric, dielectric and DC resistive properties of Sb and Cr-doped ceramics with a base composition of Pb(Mg1/3Nb2/3)0.025(Zr0.825Ti0.175)0.975O3 have been studied. Sb doping has been shown to produce a linear reduction in Curie temperature (TC=−22z+294 °C) with concentration (z) and to give an increase in pyroelectric coefficient from 250 to 310 μCm−2 K−1 for z increasing from 0 to 3 at.%. It also produces first a reduction and then an increase in both dielectric constant and loss, ...

  18. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  19. Effect of processing routes on microstructure, electrical and dielectric behavior of Mg-doped CaCu3Ti4O12 electro-ceramic

    Science.gov (United States)

    Singh, Laxman; Rai, U. S.; Mandal, K. D.; Rai, Alok Kumar

    2013-09-01

    In the present communication, data on magnesium-doped calcium copper titanate CaCu2.90Mg0.10Ti4O12 (CCMTO) electro-ceramic, synthesized by the semi-wet route (SWR), ball-milled route (BMR) and solid-state route (SSR), is characterized by TG-DTA, XRD, SEM, EDX and TEM techniques. XRD confirmed the formation of single phase in CCMTO ceramic. The CuO phase present at grain boundaries in SWR ceramic was shown by the SEM micrograph, which was verified by EDX. The TEM image of SWR ceramic shows nanocrystalline particles in the range 80±20 nm. The value of the dielectric constant of SWR ( ɛ r ˜20091) ceramic is higher than those of BMR and SSR ( ɛ r ˜1247) ceramics at 1 kHz at 450 K. A dielectric relaxation has been observed in the frequency range 100 Hz-100 kHz. The high-temperature dielectric dispersion shows one large low-frequency response and two Debye-type relaxations. The impedance and modulus studies show the highest grain-boundary resistance for BMR ceramic.

  20. Improvements of uniformity and stoichiometry for zone-leveling Czochralski growth of MgO-doped LiNbO3 crystals

    International Nuclear Information System (INIS)

    Tsai, C.B.; Hsu, W.T.; Shih, M.D.; Tai, C.Y.; Hsieh, C.K.; Hsu, W.C.; Hsu, R.T.; Lan, C.W.

    2006-01-01

    The zone-leveling Czochralski (ZLCz) technique is a continuous feeding process and can be used for the growth of near-stoichiometric lithium niobate (SLN) single crystals. However, the finite crucible length can cause the variation of the zone length and thus the composition and stoichiometry, especially in the growth of a large diameter crystal. To solve the problems, several approaches were proposed for the growth of 4 cm-diameter 1 mol% MgO-doped SLN. The modification of the hot zone to minimize the zone variation was found useful for the uniformity, but the stoichiometry was inadequate even with the zone composition up to 60 mol% Li 2 O. A Li-excess feed was further used and a good Li/Nb ratio was obtained. Adding K 2 O (16 mol%) into the solution zone was useful as well, but it was inferior to using the Li-excess feed. In addition, a much lower growth rate was needed for getting an inclusion-free crystal

  1. Optical Thin Film Coating Having High Damage Resistance in Near-Stoichiometric MgO-Doped LiTaO3

    Science.gov (United States)

    Tateno, Ryo; Kashiwagi, Kunihiro

    2008-08-01

    Currently, High power and compact red, green, and blue (RGB) lasers are being considered for use in large screen laser televisions and reception-lobby projectors. Among these three laser sources, green semiconductor lasers are expensive and exhibit inferior performance in terms of the semiconductor material used, making it difficult to achieve a high output. In this study, we examined the use of our coating on MgO-doped LiTaO3, using a mirror coated with a multilayer film. Over a substrate, a Ta2O5 film was used to coat a high-refractive-index film layer, and a SiO2 film was used to coat a low-refractive-index film layer. To improve reflectivity, we designed the peak of the electric field intensity to be in the film layer with the low refractive index. As a result, the film endurance of 100 J/cm2 was obtained by one-on-one testing. With the nonlinear crystal material, the mirror without our coating exhibited a damage threshold of 33 J/cm2; however, after coating, this mirror demonstrated a higher damage threshold of 47 J/cm2. Thus, the film we fabricated using this technique is useful for improving the strength and durability of laser mirrors.

  2. Density functional theory study of small X-doped Mg(n) (X = Fe, Co, Ni, n = 1-9) bimetallic clusters: equilibrium structures, stabilities, electronic and magnetic properties.

    Science.gov (United States)

    Kong, Fanjie; Hu, Yanfei

    2014-03-01

    The geometries, stabilities, and electronic and magnetic properties of Mg(n) X (X = Fe, Co, Ni, n = 1-9) clusters were investigated systematically within the framework of the gradient-corrected density functional theory. The results show that the Mg(n)Fe, Mg(n)Co, and Mg(n)Ni clusters have similar geometric structures and that the X atom in Mg(n)X clusters prefers to be endohedrally doped. The average atomic binding energies, fragmentation energies, second-order differences in energy, and HOMO-LUMO gaps show that Mg₄X (X = Fe, Co, Ni) clusters possess relatively high stability. Natural population analysis was performed and the results showed that the 3s and 4s electrons always transfer to the 3d and 4p orbitals in the bonding atoms, and that electrons also transfer from the Mg atoms to the doped atoms (Fe, Co, Ni). In addition, the spin magnetic moments were analyzed and compared. Several clusters, such as Mg₁,₂,₃,₄,₅,₆,₈,₉Fe, Mg₁,₂,₄,₅,₆,₈,₉Co, and Mg₁,₂,₅,₆,₇,₉Ni, present high magnetic moments (4 μ(B), 3 μ(B), and 2 μ(B), respectively).

  3. Dielectric properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu; Pokhodnya, Konstantin

    2015-11-01

    Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

  4. Doping Experiments on Low-Dimensional Oxides and a Search for Unusual Magnetic Properties of MgAlB14

    Energy Technology Data Exchange (ETDEWEB)

    Hill, Julienne Marie [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Doping experiments on La2CuO4, Sr2CuO3 and SrCu2(BO3)2 were performed with the intent of synthesizing new metallic low-=dimensional cuprate oxide compounds. Magnetic susceptibility χ(T) measurements on a polycrystalline La2CuO4 sample chemically oxidized at room temperature in aqueous NaClO showed superconductivity with a superconducting transition temperature Tc of 42.6 K and a Meissner fraction of 26%. They were unable to electrochemically oxidize La2CuO4 in a nonaqueous solution of tetramethylammonium hydroxide (TMAOH) and methanol. Sr2CuO3 was found to decompose upon exposure to air and water. Electron paramagnetic resonance, isothermal magnetization M(H), and χ(T) measurements on the primary decomposition product, Sr2Cu(OH)6, were consistent with a nearly isolated, spin S = 1/2, local moment model for the Cu+2 spins. From a fit of χ(T) by the Curie-Weiss law and of the M(H) isotherms by a modified Brillouin function, the weakly antiferromagnetic exchange interaction between adjacent Cu+2 spins in Sr2Cu(OH)6 was found to be J/kB = 1.06(4) K. Doping studies on SrCu2(BO3)2 were inconclusive. χ(T) measurements on an undoped polycrystalline sample of SrCu2(BO3)2, a sample treated with distilled water, and a sample treated with aqueous NaClO showed no qualitative differences between the samples. In addition, χ(T) and M(H, T) studies of the ultra-hard material MgAlB14 were carried out in search of superconductivity or ferromagnetism in this compound. χ(T) measurements on a powder sample revealed temperature-independent diamagnetism from 1.8 K up to room temperature with a Curie-Weiss impurity concentration equivalent to ~ 1 mol% of spin-1/2 ions. In contrast

  5. Magnetic structure of MgCu2O3 and doping-induced spin reorientation in Mg1-x/2LixCu2-x/2O3

    DEFF Research Database (Denmark)

    Winkelmann, M.; Graf, H.A.; Andersen, N.H.

    1994-01-01

    The magnetic properties of undoped and Li-doped MgCu2O3 single crystals have been studied by magnetic-susceptibility and neutron-diffraction measurements. The pure compound is a semiconductor with an antiferromagnetic ground state (T(N) = 95 K). Above T(N), short-range magnetic correlations within...... the Cu-O chains of the MgCu2O3 structure give rise to a predominantly one-dimensional (1D) magnetic behavior. This is revealed by the quantitative interpretation of the susceptibility measurements. Below T(N), the 3D magnetic structure, derived from neutron-diffraction experiments, can be described...... is similar to the one producing an infinitely degenerate state in antiferromagnetic fcc lattices. Doping experiments with Li clearly demonstrate the importance of spin fluctuations and fluctuations of the local exchange fields for lifting the degeneracy in such a system. A remarkably small amount of Li...

  6. Piezoelectric properties and temperature stability of Mn-doped Pb(Mg1/3Nb2/3)-PbZrO3-PbTiO3 textured ceramics

    OpenAIRE

    Yan, Yongke; Cho, Kyung-Hoon; Priya, Shashank

    2012-01-01

    In this letter, we report the electromechanical properties of textured 0.4Pb(Mg1/3Nb2/3) O-3-0.25PbZrO(3)-0.35PbTiO(3) (PMN-PZT) composition which has relatively high rhombohedral to tetragonal (R-T) transition temperature (TR-T of 160 degrees C) and Curie temperature (T-C of 234 degrees C) and explore the effect of Mn-doping on this composition. It was found that MnO2-doped textured PMN-PZT ceramics with 5 vol.% BaTiO3 template (T-5BT) exhibited inferior temperature stability. The coupling f...

  7. Raman and impedance spectroscopy methods of P{sub 2}O{sub 5}–Li{sub 2}O–Al{sub 2}O{sub 3} glass system doped with MgO

    Energy Technology Data Exchange (ETDEWEB)

    Jlassi, I., E-mail: ifa.jlassi@fst.rnu.tn [Laboratoire Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université de Tunis ElManar, Campus Universitaire Farhat Hachad, ElManar 2092 (Tunisia); Sdiri, N. [Laboratoire Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Elhouichet, H. [Laboratoire Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, Université de Tunis ElManar, Campus Universitaire Farhat Hachad, ElManar 2092 (Tunisia); Ferid, M. [Laboratoire Physico-chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95, Hammam-Lif 2050 (Tunisia)

    2015-10-05

    Highlights: • We have prepared a new lithium diphosphate glasses doped MgO. • Investigate structural and electrical properties at room temperature. • Investigate relation between structure and electrical conductivity of the glass. - Abstract: Lithium diphosphate glasses doped MgO was prepared via a melt quenching technique. The samples were characterized by X-ray diffraction (XRD), Raman and impedance spectroscopy. XRD spectra reflected the amorphous nature of the glasses Raman spectra show structural network modifications with the composition variations of the studied glasses. Raman spectra of the studied glasses contain also typical phosphate glasses bands. Thus the band at ∼698 cm{sup −1} assigned to symmetric stretching vibrations of P−O−P groups and that from ∼1168 cm{sup −1} is attributed to symmetric stretching motions of the non-bridging oxygen (NBO) atoms bonded to phosphorous atoms (PO{sub 2}) in phosphate tetrahedron. Electric properties were investigated using complex impedance spectroscopy in a frequency range from 40 Hz to 6 MHz at room temperature. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). Constant-phase elements (CPE) are used in equivalent electrical circuits for the fitting of experimental impedance data. The AC conductivity exhibited a Jonscher’s universal power law according with the relation σ(ω) = σ(0) + Aω{sup s} and it is observed that as the MgO content increases, frequency exponent (s) decreases.

  8. Infrared emissions in MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}/Ba{sup 2+}/Ca{sup 2+} obtained by solution combustion route

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Vijay, E-mail: vijayjiin2006@yahoo.com [Physical Chemistry, Institute for Pure and Applied Chemistry and Center of Interface Science, University of Oldenburg, 26129 Oldenburg (Germany); Kumar Rai, Vineet [Department of Applied Physics, Indian School of Mines, Dhanbad 826 004 (India); Venkatramu, V. [Department of Physics, Yogi Vemana University, Kadapa 516 003 (India); Chakradhar, R.P.S. [CSIR-National Aerospace, Bangalore 560 017 (India); Hwan Kim, Sang [Department of Chemical Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)

    2013-02-15

    An intense infrared emitting MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}, Ba{sup 2+} and Ca{sup 2+} ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl{sub 10}O{sub 17} phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed upon excitation at 980 nm. Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: Black-Right-Pointing-Pointer The hexagonal phase of MgSrAl{sub 10}O{sub 17} could be obtained by the low temperature combustion method. Black-Right-Pointing-Pointer The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed. Black-Right-Pointing-Pointer Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} were reported.

  9. Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

    Science.gov (United States)

    Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

    2013-01-01

    Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

  10. Surface properties of Co-doped BaFe{sub 2}As{sub 2} thin films deposited on MgO with Fe buffer layer and CaF{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sobota, R. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Plecenik, T., E-mail: tomas.plecenik@fmph.uniba.sk [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Gregor, M.; Truchly, M.; Satrapinskyy, L.; Vidis, M.; Secianska, K. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Kurth, F.; Holzapfel, B.; Iida, K. [Institute for Metallic Materials, IFW Dresden, PO Box 270116, D-01171 Dresden (Germany); Kus, P.; Plecenik, A. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia)

    2014-09-01

    Highlights: • Surfaces of Co-doped Ba-122 films on various substrates were studied. • Substrate influences topography and surface conductivity distribution of the films. • Surface conductivity of Co-doped Ba-122 is highly inhomogeneous. • Point contact spectroscopy results can be affected by the surface differences. - Abstract: Surface properties of Co-doped BaFe{sub 2}As{sub 2} (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF{sub 2} substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.

  11. Residual stress and its effect on the mechanical properties of Y-doped Mg alloy fabricated via back-pressure assisted equal channel angular pressing (ECAP-BP)

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Jianghua, E-mail: j_shen@live.cn [Department of Mechanical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223-0001 (United States); School of Aeronautics, Northwestern Polytechnical University, Xi’an 710072 (China); Gärtnerová, Viera [Laboratory of Nanostructures and Nanomaterials, Institute of Physics of the ASCR, Na Slovance 2, CZ – 182 21, Prague 8 (Czech Republic); Kecskes, Laszlo J. [US Army Research Laboratory, Aberdeen Proving Ground, MD 21005-5069 (United States); Kondoh, Katsuyoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaragi, Osaka 567-0047 (Japan); Jäger, Aleš, E-mail: jager@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics of the ASCR, Na Slovance 2, CZ – 182 21, Prague 8 (Czech Republic); Wei, Qiuming [Department of Mechanical Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223-0001 (United States)

    2016-07-04

    In this study, pure magnesium (Mg) and Mg-0.6 wt% yttrium (Y) binary alloy were fabricated via casting followed by room temperature equal channel angular pressing (ECAP) using an applied back pressure (BP). Microstructural examination after ECAP-BP revealed a fine-grained Mg-Y alloy with a high residual stress level, whereas, the pure Mg exhibited a well-recrystallized microstructure with uniform and equiaxed grains, but retaining very little residual stress. The Y atoms were present in the Mg matrix as solid solutes and acted as dislocation and grain boundary blockers, thus suppressing dynamic recovery and/or recrystallization during the ECAP process. The Mg-Y alloy had an average grain size of ~400 nm, approximately one order smaller than that of pure Mg. The combination of high residual stress and ultrafine grains of the Mg-Y alloy gave rise to a significant difference in its mechanical behavior from that of the pure Mg, under both quasi-static and dynamic compressive loading.

  12. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  13. Up-conversion and near infrared luminescence in Er3+/Yb3+ co-doped glass-ceramic containing MgGa2O4 nano-crystals

    International Nuclear Information System (INIS)

    Sun, Jiaju; Yu, Lixin; Li, Fuhai; Wei, Shuilin; Li, Songchu

    2016-01-01

    The MgO–Ga 2 O 3 –SiO 2 (MG-S) glasses and nanocrystalline glass-ceramics (GCs) containing MgGa 2 O 4 nanocrystals codoped with Er 3+ and Yb 3+ were prepared by a simple sol–gel method. The formation of MgGa 2 O 4 nanocrystals in the GCs was confirmed by the X-ray diffraction (XRD). Their morphology was investigated applying high-resolution transmission electron microscopy (HRTEM). Stark splitting of near infrared (NIR) and up-conversion (UC) emission implies that the Er 3+ is incorporated into MgGa 2 O 4 nanocrystals. The effect of the MgO, Ga 2 O 3 content and sintering temperature on the structure of the prepared samples was systematically studied. Under 980 nm excitation, intense UC and NIR emission (1530 nm) were observed in the MG-S GCs by efficient energy transfer from Yb 3+ to Er 3+ . The two-photon process was confirmed to be responsible for both the green and red UC emissions. - Highlights: • It is interesting that the CIE chromaticity coordinates of the several prepared CaMO 4 :Eu samples by a hydrothermal method are very close to the standard of white light.

  14. Ultrasound-assisted synthesis of zinc molybdate nanocrystals and molybdate-doped epoxy/PDMS nanocomposite coatings for Mg alloy protection.

    Science.gov (United States)

    Eduok, Ubong; Szpunar, Jerzy

    2018-06-01

    Zinc molybdate (ZM) is a safer anticorrosive additive for cooling systems when compared with chromates and lead salts, due to its insolubility in aqueous media. For most molybdate pigments, their molybdate anion (MoO 4 -2 ) acts as an anionic inhibitor and its passivation capacity is comparable with chromate anion (CrO 4 -2 ). To alleviate the environmental concerns involving chromates-based industrial protective coatings, we have proposed new alternative in this work. We have synthesized ZM nanocrystals via ultrasound-assisted process and encapsulated them within an epoxy/PDMS coating towards corrosion protection. The surface morphology and mechanical properties of these ZM doped epoxy/PDMS nanocomposite coatings is exhaustively discussed to show the effect of ZM content on protective properties. The presence of ZM nanocrystals significantly contributed to the corrosion barrier performance of the coating while the amount of ZM nanocrystals needed to prepare an epoxy coating with optimum barrier performance was established. Beyond 2 wt% ZM concentration, the siloxane-structured epoxy coating network became saturated with ZM pigments. This further broadened inherent pores channels, leading to the percolation of corrosion chloride ions through the coating. SEM evidence has revealed proof of surface delamination on ZM3 coating. A model mechanism of corrosion resistance has been proposed for ZM doped epoxy/PDMS nanocomposite coatings from exhaustive surface morphological investigations and evidence. This coating matrix may have emerging applications in cooling systems as anticorrosive surface paints as well as create an avenue for environmental corrosion remediation. Copyright © 2018 Elsevier B.V. All rights reserved.

  15. Piezoelectric properties and temperature stability of Mn-doped Pb(Mg1/3Nb2/3)-PbZrO3-PbTiO3 textured ceramics

    Science.gov (United States)

    Yan, Yongke; Cho, Kyung-Hoon; Priya, Shashank

    2012-03-01

    In this letter, we report the electromechanical properties of textured 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (PMN-PZT) composition which has relatively high rhombohedral to tetragonal (R-T) transition temperature (TR-T of 160 °C) and Curie temperature (TC of 234 °C) and explore the effect of Mn-doping on this composition. It was found that MnO2-doped textured PMN-PZT ceramics with 5 vol. % BaTiO3 template (T-5BT) exhibited inferior temperature stability. The coupling factor (k31) of T-5BT ceramic started to degrade from 75 °C while the random counterpart showed a very stable tendency up to 180 °C. This degradation was associated with the "interface region" formed in the vicinity of BT template. MnO2 doped PMN-PZT ceramics textured with 3 vol. % BT and subsequently poled at 140 °C (T-3BT140) exhibited very stable and high k31 (>0.53) in a wide temperature range from room temperature to 130 °C through reduction in the interface region volume. Further, the T-3BT140 ceramic exhibited excellent hard and soft combinatory piezoelectric properties of d33 = 720 pC/N, k31 = 0.53, Qm = 403, tan δ = 0.3% which are very promising for high power and magnetoelectric applications.

  16. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

    Science.gov (United States)

    Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

    2017-03-01

    Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

  17. New Insight on Tuning Electrical Transport Properties via Chalcogen Doping in n-type Mg3Sb2-Based Thermoelectric Materials

    DEFF Research Database (Denmark)

    Zhang, Jiawei; Song, Lirong; Borup, Kasper

    2018-01-01

    n-type Mg3Sb1.5Bi0.5 has recently been discovered to be a promising thermoelectric material, yet the effective n-type dopants are mainly limited to the chalcogens. This may be attributed to the limited chemical insight into the effects from different n-type dopants. By comparing the effects of di...

  18. Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

    Science.gov (United States)

    Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

    2015-12-01

    To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

  19. Preparation and characterization of TiO{sub 2} doped and MgO stabilized Na–β″-Al{sub 2}O{sub 3} electrolyte via a citrate sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Shan, Shi-Jie; Yang, Li-Ping; Liu, Xiao-Min; Wei, Xiao-Ling [College of Materials Science and Engineering, Nanjing University of Technology, 5 Xinmofan Road, Nanjing, Jiangsu 210009 (China); Yang, Hui, E-mail: yanghui@njut.edu.cn [College of Materials Science and Engineering, Nanjing University of Technology, 5 Xinmofan Road, Nanjing, Jiangsu 210009 (China); Shen, Xiao-Dong [College of Materials Science and Engineering, Nanjing University of Technology, 5 Xinmofan Road, Nanjing, Jiangsu 210009 (China)

    2013-06-25

    Highlights: ► TiO{sub 2} doped Na–β″-Al{sub 2}O{sub 3} electrolyte is synthesized via a sol–gel method with C{sub 16}H{sub 36}O{sub 4}Ti as the precursor for TiO{sub 2}. ► The optimized sample contains 90.28% of β″ phase and presents a very high relative density (99.5%). ► The optimized sample exhibits the bending strength up to 180 MPa and an ionic conductivity up to 0.21 S cm{sup −1} (350 °C). -- Abstract: TiO{sub 2} doped and MgO stabilized Na–β″-Al{sub 2}O{sub 3} is synthesized via a citrate sol–gel method starting with Al(NO{sub 3}){sub 3}, NaNO{sub 3}, Mg(NO{sub 3}){sub 2} and C{sub 16}H{sub 36}O{sub 4}Ti (tetrabutyl titanate, abbreviated as TBT). It is found that the TBT amount in the starting materials is the key factor to affect the properties of the final product, therefore, the samples sintered from precursors containing different amounts of TBT are systematically investigated by means of powder X-ray diffraction (XRD) and scanning electron microscopy (SEM). Meanwhile, the relative density, mechanical strength and electrical properties of the prepared samples are also measured. The optimized sample contains 90.28% of β″ phase, exhibits a uniform and compact microstructure with a relative density as high as 99.5% of theoretical density (TD). In addition, this sample exhibits a bending strength up to 180 MPa and an ionic conductivity up to 0.21 S cm{sup −1} at 350 °C.

  20. Growth and microstructure of columnar Y-doped SrZrO{sub 3} films deposited on Pt-coated MgO by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Sijun, E-mail: sluo1@tulane.edu; Riggs, Brian C.; Shipman, Joshua T.; Adireddy, Shiva; Sklare, Samuel C.; Chrisey, Douglas B., E-mail: dchrisey@tulane.edu [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Zhang, Xiaodong; Koplitz, Brent [Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States)

    2015-07-21

    Direct integration of proton conductor films on Pt-coated substrates opens the way to film-based proton transport devices. Columnar SrZr{sub 0.95}Y{sub 0.05}O{sub 3−δ} (SZY) films with dense microstructure were deposited on Pt-coated MgO(100) substrates at 830 °C by pulsed laser deposition. The optimal window of ambient O{sub 2} pressure for good crystallinity of SZY films is from 400 to 600 mTorr. The ambient O{sub 2} compresses the plasma plume of SZY and increases the deposition rate. The 10 nm thick Ti adhesion layer on MgO(100) greatly affects the orientation of the sputtered Pt layers. Pt deposited directly on MgO shows a highly (111)-preferred orientation and leads to preferentially oriented SZY films while the addition of a Ti adhesion layer makes Pt show a less preferential orientation that leads to randomly oriented SZY films. The RMS surface roughness of preferentially oriented SZY films is larger than that of randomly oriented SZY films deposited under the same ambient O{sub 2} pressure. As the O{sub 2} pressure increased, the RMS surface roughness of preferentially oriented SZY films increased, reaching 45.7 nm (2.61% of film thickness) at 600 mTorr. This study revealed the ambient O{sub 2} pressure and orientation dependent surface roughness of SZY films grown on Pt-coated MgO substrates, which provides the potential to control the surface microstructure of SZY films for electrochemical applications in film-based hydrogen devices.

  1. Electrical conductivity of cobalt doped La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ

    Science.gov (United States)

    Wang, Shizhong; Wu, Lingli; Liang, Ying

    La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ (LSGM8282), La 0.8Sr 0.2Ga 0.8Mg 0.15Co 0.05O 3- δ (LSGMC5) and La 0.8Sr 0.2Ga 0.8Mg 0.115Co 0.085O 3- δ (LSGMC8.5) were prepared using a conventional solid-state reaction. Electrical conductivities and electronic conductivities of the samples were measured using four-probe impedance spectrometry, four-probe dc polarization and Hebb-Wagner polarization within the temperature range of 973-1173 K. The electrical conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high (>10 -5 atm) and low oxygen partial pressure regions (lanthanum gallate samples increased with increasing concentration of cobalt, suggesting that the concentration of cobalt should be optimized carefully to maintain a high electrical conductivity and close to 1 oxygen ion transference number.

  2. Monte Carlo and Ab-initio calculation of TM (Ti, V, Cr, Mn, Fe, Co, Ni) doped MgH{sub 2} hydride: GGA and SIC approximation

    Energy Technology Data Exchange (ETDEWEB)

    Salmani, E., E-mail: elmehdisalmani@gmail.com [LMPHE (URAC12), Faculty of Sciences, Mohammed V University in Rabat (Morocco); Laghrissi, A.; Lamouri, R. [LMPHE (URAC12), Faculty of Sciences, Mohammed V University in Rabat (Morocco); Benchafia, E. [Department of Materials Science and Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Ez-Zahraouy, H. [LMPHE (URAC12), Faculty of Sciences, Mohammed V University in Rabat (Morocco); Benyoussef, A. [Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

    2017-02-15

    MgH{sub 2}: TM (TM: V, Cr, Mn, Fe, Co, Ni) based dilute magnetic semiconductors (DMS) are investigated using first principle calculations. Our results show that the ferromagnetic state is stable when TM introduces magnetic moments as well as intrinsic carriers in TM: Co, V, Cr, Ti; Mg{sub 0.95}TM{sub 0.05}H{sub 2}. Some of the DMS Ferro magnets under study exhibit a half-metallic behavior, which make them suitable for spintronic applications. The double exchange is shown to be the underlying mechanism responsible for the magnetism of such materials. The exchange interactions obtained from first principle calculations and used in a classical Ising model by a Monte Carlo approach resulted in ferromagnetic states with Curie temperatures within the ambient conditions. - Highlights: • The half-metallic aspect was proven to take place for Ti, Cr, Co and Ni. • The TM impurities are shown to introduce the magnetic moment that makes MgH{sub 2} good candidates for spintronic applications.

  3. In vitro solubility and bioactivity of Sr and Mg co-doped calcium phosphate glass-ceramics derived from different heat-treatment temperatures

    International Nuclear Information System (INIS)

    Cai Shu; Li Jianxin; Xu Guohua; Li, Xudong; Ye Xiaojian; Jiang Wei

    2011-01-01

    Highlights: ► Porous glass ceramics were prepared by controlled heat treatment process. ► A fast release of Mg ions has a great influence on the Ca/P ratio of the deposits. ► The chemical stability of the deposited apatite directly affects cell behavior. ► The glass ceramics heat-treated at 760 °C and 780 °C show less glass. ► The degradation rates are both compatible with cell growth and differentiation. - Abstract: CaO–P 2 O 5 –Na 2 O–SrO–MgO glass–ceramic system was prepared by controlled heat treatment process. Solubility and bioactivity of glass-ceramics were measured and evaluated in simulated body fluid (SBF) and cell culture medium respectively. The dissolution behavior of these glass-ceramics strongly depends on the amount and microstructure of the crystals precipitated by sintering treatment. Concerning the bioactivity, the onset of the apatite formation on the glass–ceramic system was directly dependent on the amount of bioactive glass amount which can be controlled using different temperatures of heat treatment. After immersing glass–ceramic in SBF, Mg ion as one of system composition can be released from residual glass and provides a high impact on the Ca/P ratio and chemical stability of the deposited apatite layer that directly affects cell attachment and proliferation in in vitro cell culture system. The glass ceramics heat-treated at 760 °C and 780 °C show less glass amount, and their degradation rates are both compatible with cell growth and differentiation.

  4. Spectroscopic and dielectric properties of titanium doped MgO-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3} glass system

    Energy Technology Data Exchange (ETDEWEB)

    Raju, G Naga; Ramesh, N Ch; Naresh, P; Krishna, T L; Srinivasulu, K; Sudhkar, K S V; Rao, P Venkateswara, E-mail: gnag_9@rediffmail.com [Department of Physics, Acharya Nagarjuna University-Nuzvid Campus, Nuzvid - 521 201 (India)

    2009-07-15

    In this paper we have reported the influence of titanium ions on different spectroscopic and dielectric properties of MgO-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3} glasses. The analysis of result of all these studies has indicated that as the concentration of TiO{sub 2} increased in the glass matrix, there is a gradual transformation of titanium ions from octahedral position to tetrahedral positions and cause to increase the rigidity of glass network.

  5. Site selective, time and temperature dependent spectroscopy of Eu{sup 3+} doped apatites (Mg,Ca,Sr){sub 2}Y{sub 8}Si{sub 6}O{sub 26}

    Energy Technology Data Exchange (ETDEWEB)

    Jansen, T., E-mail: t.jansen@fh-muenster.de [Münster University of Applied Sciences, Stegerwaldstrasse 39, 48565 Steinfurt (Germany); Jüstel, T. [Münster University of Applied Sciences, Stegerwaldstrasse 39, 48565 Steinfurt (Germany); Kirm, M.; Mägi, H.; Nagirnyi, V.; Tõldsepp, E.; Vielhauer, S. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia); Khaidukov, N.M. [N. S. Kurnakov Institute of General and Inorganic Chemistry, 31 Leninskiy Prospekt, 119991 Moscow (Russian Federation); Makhov, V.N. [P.N. Lebedev Physical Institute, 53 Leninskiy Prospekt, 119991 Moscow (Russian Federation)

    2017-06-15

    This work concerns the optical properties of alkaline earth yttrium apatites according to the composition AE{sub 2}Y{sub 8}Si{sub 6}O{sub 26} (AE=Mg, Ca, Sr) doped with Eu{sup 3+}, which are materials of interest for LED applications. Using a multistep preparation route, which includes hydrothermal synthesis of precursors for solid state reaction, ceramic samples were prepared and their structural and optical properties characterised. More particularly, this work relates to site-selective spectroscopy, since the compounds comprise two distinguishable crystallographic sites within the host structure, where Eu{sup 3+} can be substituted. It also describes the temperature dependent photoluminescence, which thermal quenching temperature (T{sub 1/2}) for Sr{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} and Ca{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} is in the range of 561 K and 591 K respectively, whereas Mg{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} shows bi-sigmoidal quenching behaviour in the range between 210 and 452 K.

  6. Performance of intermediate temperature (600-800 °C) solid oxide fuel cell based on Sr and Mg doped lanthanum-gallate electrolyte

    Science.gov (United States)

    Gong, Wenquan; Gopalan, Srikanth; Pal, Uday B.

    The solid electrolyte chosen for this investigation was La 0.9Sr 0.1Ga 0.8Mg 0.2O 3 (LSGM). To select appropriate electrode materials from a group of possible candidate materials, AC complex impedance spectroscopy studies were conducted between 600 and 800 °C on symmetrical cells that employed the LSGM electrolyte. Based on the results of the investigation, LSGM electrolyte supported solid oxide fuel cells (SOFCs) were fabricated with La 0.6Sr 0.4Co 0.8Fe 0.2O 3-La 0.9Sr 0.1Ga 0.8Mg 0.2O 3 (LSCF-LSGM) composite cathode and nickel-Ce 0.6La 0.4O 2 (Ni-LDC) composite anode having a barrier layer of