WorldWideScience

Sample records for heavily doped cuinte

  1. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  2. Heavily nitrogen doped, graphene supercapacitor from silk cocoon

    International Nuclear Information System (INIS)

    Sahu, Vikrant; Grover, Sonia; Tulachan, Brindan; Sharma, Meenakshi; Srivastava, Gaurav; Roy, Manas; Saxena, Manav; Sethy, Niroj; Bhargava, Kalpana; Philip, Deepu; Kim, Hansung; Singh, Gurmeet; Singh, Sushil Kumar; Das, Mainak; Sharma, Raj Kishore

    2015-01-01

    Doping of graphene with nitrogen is of much interest, since it improves the overall conductivity and supercapacitive properties. Besides conductivity, nitrogen doping also enhances the pseudo-capacitance due to fast and reversible surface redox processes. In this work, we have developed a cheap and easy process for synthesizing heavily nitrogen doped graphene (15% nitrogen) from non-mulberry silk cocoon membrane (Tassar, Antheraea mylitta) by pyrolyzing the cocoon at 400 °C in argon atmosphere. Further we have investigated the performance of this heavily ‘nitrogen doped graphene’ (NDG) in a supercapacitor device. Our results suggest that NDG obtained from cocoon has improved supercapacitor performance. The improved performance is due to the high electronegativity of nitrogen that forms dipoles on the graphene surface. These dipoles consequently enhance the tendency of graphene to attract charged species to its surface. This is a green and clean synthesis approach for developing electronic materials for energy applications

  3. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  4. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

  5. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Near-infrared free carrier absorption in heavily doped silicon

    International Nuclear Information System (INIS)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-01-01

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

  7. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  8. Measurement of surface recombination velocity on heavily doped indium phosphide

    International Nuclear Information System (INIS)

    Jenkins, P.; Ghalla-Goradia, M.; Faur, M.; Bailey, S.

    1990-01-01

    The controversy surrounding the published low values of surface recombination velocity (SRV) in n-InP, solidified in recent years when modeling of existing n/p InP solar cells revealed that the front surface SRV had to be higher than 1 x 10 6 cm/sec in order to justify the poor blue response that is characteristic of all n/p InP solar cells. In this paper, SRV on heavily doped (>10 18 cm -3 )n-type and p-type InP is measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ∼10 5 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10 6 cm/sec

  9. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  10. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  11. Surface photovoltage in heavily doped GaN:Si,Zn

    Science.gov (United States)

    McNamara, J. D.; Behrends, A.; Mohajerani, M. S.; Bakin, A.; Waag, A.; Baski, A. A.; Reshchikov, M. A.

    2014-02-01

    In n-type GaN, an upward band bending of about 1 eV is caused by negative charge at the surface. UV light reduces the band bending by creating a surface photovoltage (SPV), which can be measured by a Kelvin probe. Previously, we reported a fast SPV signal of about 0.6 eV in undoped and moderately doped GaN. In this work, we have studied degenerate GaN co-doped with Zn and Si, with a Si concentration of about 1019 cm-3 and a Zn concentration of 6×1017 cm-3. At room temperature, a fast component of about 0.6 eV was observed. However, after preheating the sample at 600 K for one hour and subsequently cooling the sample to 300 K (all steps performed in vacuum), the fast component disappeared. Instead, a very slow (minutes) and logarithmic in time rise of the SPV was observed with UV illumination. The total change in SPV was about 0.4 eV. This slow SPV transient can be reversibly converted into the "normal" fast (subsecond) rise by letting air or dry oxygen in at room temperature. Possible explanations of the observed unusual SPV transients are discussed.

  12. Electron transport in heavily doped GdN

    Science.gov (United States)

    Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

    2018-01-01

    We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

  13. Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

    Science.gov (United States)

    Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

    2015-03-01

    We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

  14. Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

    Science.gov (United States)

    Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

    2017-12-22

    Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

  15. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  16. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  17. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  18. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  19. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V; Gharahcheshmeh, MH; Xu, A; Galstyan, E; Delgado, L; Cantoni, C

    2015-01-19

    REBa2Cu3Ox ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50K and fields of 2-30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J(c)) above 20 MA/cm(2) at 30 K, 3 T in heavily doped (25 mol.% Zr-added) (Gd,Y)Ba2Cu3Ox superconductor tapes, which is more than three times higher than the J(c) typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m(3) have also been attained at 20 K. A composition map of lift factor in J(c) (ratio of J(c) at 30 K, 3 T to the J(c) at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO3 (BZO) nanocolumn defect density of nearly 7 x 10(11) cm(-2) as well as 2-3 nm sized particles rich in Cu and Zr have been found in the high J(c) films. (C) 2015 AIP Publishing LLC.

  20. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  1. Anomalous transmission through heavily doped conducting polymer films with periodic subwavelength hole array

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-08-01

    We observed resonantly enhanced (or anomalous transmission) terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF 6 molecules [PPy(PF6)]. The anomalous transmission spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the resonantly enhanced transmission peaks are broader in the exotic metallic PPy(PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, indicating that the surface plasmon polaritons on the PPy(PF6) film surfaces have higher attenuation.

  2. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  3. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  4. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

    1994-01-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

  5. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

    1994-11-01

    Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

  6. One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

    2008-03-21

    We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

  7. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  8. High critical currents in heavily doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L.; Cantoni, C.

    2015-01-01

    REBa 2 Cu 3 O x ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J c ) above 20 MA/cm 2 at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba 2 Cu 3 O x superconductor tapes, which is more than three times higher than the J c typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m 3 have also been attained at 20 K. A composition map of lift factor in J c (ratio of J c at 30 K, 3 T to the J c at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO 3 (BZO) nanocolumn defect density of nearly 7 × 10 11  cm −2 as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J c films

  9. Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

    International Nuclear Information System (INIS)

    Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

    2009-01-01

    Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

  10. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  11. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  12. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  13. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  14. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  15. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  16. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  17. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  18. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  19. Resonantly-enhanced transmission through a periodic array of subwavelength apertures in heavily-doped conducting polymer films

    Science.gov (United States)

    Matsui, Tatsunosuke; Vardeny, Z. Valy; Agrawal, Amit; Nahata, Ajay; Menon, Reghu

    2006-02-01

    We observed resonantly-enhanced terahertz transmission through two-dimensional (2D) periodic arrays of subwavelength apertures with various periodicities fabricated on metallic organic conducting polymer films of polypyrrole heavily doped with PF6 molecules [PPy(PF6)]. The "anomalous transmission" spectra are in good agreement with a model involving surface plasmon polariton excitations on the film surfaces. We also found that the `anomalous transmission' peaks are broader in the exotic metallic PPy (PF6) films compared to those formed in 2D aperture array in regular metallic films such as silver, showing that the surface plasmon polaritons on the PPy (PF6) film surfaces have higher attenuation.

  20. The effect of irradiation temperature on the optical attenuation recovery in heavily Ge-doped single mode silica core fibers

    International Nuclear Information System (INIS)

    Bertolotti, M.; Mabrouk, M.A.; Ferrari, A.; Serra, A.; Viezzoli, G.

    1992-01-01

    The behaviour under irradiation of a single mode fiber heavily doped with germanium has been investigated at 0.85 μm and 1.3 μm under different irradiation temperatures in the range from -65degC to 60degC. The time behaviour of the recovery of the induced attenuation has been described using empirical equations, for different temperatures. An nth order kinetics seems appropriate to describe the results and the order of kinetics has been determined at different temperatures. (orig.)

  1. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  2. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  3. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

    2017-02-15

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

  4. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  5. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  6. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  7. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  8. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  9. Electronic transport in heavily doped Ag/n-Si composite films

    Directory of Open Access Journals (Sweden)

    Clayton W. Bates Jr.

    2013-10-01

    Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

  10. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  11. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  12. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  13. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  14. Prospective high thermoelectric performance of the heavily p-doped half-Heusler compound CoVSn

    International Nuclear Information System (INIS)

    Shi, Hongliang; Ming, Wenmei; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2017-01-01

    The electronic structure and transport properties of the half-Heusler compound CoVSn are studied in this paper systematically by combining first-principles electronic structure calculations and Boltzmann transport theory. The band structure at the valence-band edge is complex with multiple maxima derived from hybridized transition element d states. The result is a calculated thermopower larger than 200 μV /Κ within a wide range of doping concentrations and temperatures for heavily doped p-type CoVSn. The thermoelectric properties additionally benefit from the corrugated shapes of the hole pockets in our calculated isoenergy surfaces. Our calculated power factor S"2σ/τ (with respect to an average unknown scattering time) of CoVSn is comparable to that of FeNbSb. A smaller lattice thermal conductivity can be expected from the smaller group velocities of acoustical modes compared to FeNbSb. Finally, overall, good thermoelectric performance for CoVSn can be expected by considering the electronic transport and lattice thermal conductivity.

  15. Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

    2011-01-01

    Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

  16. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

    Science.gov (United States)

    Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

    1996-01-01

    We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

  17. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

    International Nuclear Information System (INIS)

    Norris, C.B.; Barnes, C.E.

    1980-01-01

    The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

  18. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  19. Contribution to the study, by magnetic resonance, of the properties of heavily doped silicon at low temperature

    International Nuclear Information System (INIS)

    Jerome, D.

    1965-10-01

    The magnetic properties of heavily doped silicon at low temperature have been studied in a range of concentration on either side of the Mott transition. For impurity densities less than that of the transition a magnetic double resonance method allows the exchange coupling between localized donors to be measured, and in addition the existence of paramagnetic centers (pairs of neutral and ionized donors) is demonstrated. The behaviour of the spin-lattice relaxation of 29 Ci is explained in terms of the dipolar coupling between nuclei and paramagnetic centers. In the range of concentration 10 16 -10 17 impurities/cm 3 , the concentration dependent relaxation of donors is studied experimentally. A theoretical explanation is proposed for the latter mechanism, the basis of which is the presence of ionized pairs of donors. At increasing impurity concentrations the electronic delocalization increases. For the concentration of 2.5 X 10 18 P/cm 3 the hyperfine coupling is responsible for the 29 Si relaxation. It is shown that the electron density has a very large maximum near the impurities in the metallic domain of concentrations. An estimation of the impurity band width (19 deg. K) is deduced from the measurement of the paramagnetic part of the electronic susceptibility at low temperature. (author) [fr

  20. Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

    2008-01-01

    The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

  1. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  2. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  3. Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

    Science.gov (United States)

    Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

    2017-11-01

    A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

  4. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  5. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  6. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  7. Carrier compensation mechanism in heavily Nb-doped anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nogawa, H; Chikamatsu, A; Hirose, Y; Hasegawa, T [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, H; Oshima, M, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan)

    2011-09-14

    We investigated the electronic structures of anatase Ti{sub 1-x}Nb{sub x}O{sub 2+{delta}} (TNO) thin films as a function of Nb concentration x using photoemission spectroscopy (PES) measurements to elucidate the origin of the abrupt decrease in carrier activation in heavily Nb-doped regime. The existing intensity ratio of Nb{sup 5+} evaluated from Nb 3d core-level PES spectra maintained a constant value of {approx}0.8 at x = 0.06-0.3, implying that electron carriers generated by Nb doping are compensated by p-type defects. Ti 2p-3d and O1s-2p resonant PES measurements of x = 0.06-0.3 films revealed that the in-gap states positioned {approx}1 eV below the Fermi level (E{sub F}) have a mixed character of Ti 3d and O 2p orbitals, whereas the states at E{sub F} mainly have a Ti 3d nature. We proposed a carrier compensation mechanism that interstitial oxygen atoms strongly combined with surrounding Nb atoms kill conduction electrons in heavily Nb-doped anatase TiO{sub 2}.

  8. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    Science.gov (United States)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  9. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  10. Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

    Science.gov (United States)

    Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

    2014-02-01

    Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

  11. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  12. Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

    CERN Document Server

    Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

    2011-01-01

    We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

  13. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  14. Heavily Graphitic-Nitrogen Self-doped High-porosity Carbon for the Electrocatalysis of Oxygen Reduction Reaction

    Science.gov (United States)

    Feng, Tong; Liao, Wenli; Li, Zhongbin; Sun, Lingtao; Shi, Dongping; Guo, Chaozhong; Huang, Yu; Wang, Yi; Cheng, Jing; Li, Yanrong; Diao, Qizhi

    2017-11-01

    Large-scale production of active and stable porous carbon catalysts for oxygen reduction reaction (ORR) from protein-rich biomass became a hot topic in fuel cell technology. Here, we report a facile strategy for synthesis of nitrogen-doped porous nanocarbons by means of a simple two-step pyrolysis process combined with the activation of zinc chloride and acid-treatment process, in which kidney bean via low-temperature carbonization was preferentially adopted as the only carbon-nitrogen sources. The results show that this carbon material exhibits excellent ORR electrocatalytic activity, and higher durability and methanol-tolerant property compared to the state-of-the-art Pt/C catalyst for the ORR, which can be mainly attributed to high graphitic-nitrogen content, high specific surface area, and porous characteristics. Our results can encourage the synthesis of high-performance carbon-based ORR electrocatalysts derived from widely-existed natural biomass.

  15. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  16. Influence of quantum confinement on the carrier contribution to the elastic constants in quantum confined heavily doped non-linear optical and optoelectronic materials: simplified theory and the suggestion for experimental determination

    International Nuclear Information System (INIS)

    Baruah, D; Choudhury, S; Singh, K M; Ghatak, K P

    2007-01-01

    In this paper we study the carrier contribution to elastic constants in quantum confined heavily doped non-linear optical compounds on the basis of a newly formulated electron dispersion law taking into account the anisotropies of the effective electron masses and spin orbit splitting constants together with the proper inclusion of the crystal field splitting in the Hamiltonian within the framework of k.p formalism. All the results of heavily doped three, and two models of Kane for heavily doped III-V materials form special cases of our generalized analysis. It has been found, taking different heavily doped quantum confined materials that, the carrier contribution to the elastic constants increases with increase in electron statistics and decrease in film thickness in ladder like manners for all types of quantum confinements with different numerical values which are totally dependent on the energy band constants. The said contribution is greatest in quantum dots and least in quantum wells together with the fact the heavy doping enhances the said contributions for all types of quantum confined materials. We have suggested an experimental method of determining the carrier contribution to the elastic constants in nanostructured materials having arbitrary band structures

  17. High critical currents in heavily doped (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V., E-mail: selva@uh.edu; Gharahcheshmeh, M. Heydari; Xu, A.; Galstyan, E.; Delgado, L. [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-4006 (United States); Cantoni, C. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2015-01-19

    REBa{sub 2}Cu{sub 3}O{sub x} ((REBCO), RE = rare earth) superconductor tapes with moderate levels of dopants have been optimized for high critical current density in low magnetic fields at 77 K, but they do not exhibit exemplary performance in conditions of interest for practical applications, i.e., temperatures less than 50 K and fields of 2–30 T. Heavy doping of REBCO tapes has been avoided by researchers thus far due to deterioration in properties. Here, we report achievement of critical current densities (J{sub c}) above 20 MA/cm{sup 2} at 30 K, 3 T in heavily doped (25 mol. % Zr-added) (Gd,Y)Ba{sub 2}Cu{sub 3}O{sub x} superconductor tapes, which is more than three times higher than the J{sub c} typically obtained in moderately doped tapes. Pinning force levels above 1000 GN/m{sup 3} have also been attained at 20 K. A composition map of lift factor in J{sub c} (ratio of J{sub c} at 30 K, 3 T to the J{sub c} at 77 K, 0 T) has been developed which reveals the optimum film composition to obtain lift factors above six, which is thrice the typical value. A highly c-axis aligned BaZrO{sub 3} (BZO) nanocolumn defect density of nearly 7 × 10{sup 11 }cm{sup −2} as well as 2–3 nm sized particles rich in Cu and Zr have been found in the high J{sub c} films.

  18. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  19. Thermoelectric properties of Ni – doped CuInTe2

    Czech Academy of Sciences Publication Activity Database

    Kucek, V.; Drašar, Č.; Navrátil, Jiří; Plecháček, T.; Beneš, L.

    2015-01-01

    Roč. 83, August (2015), s. 18-23 ISSN 0022-3697 Institutional support: RVO:61389013 Keywords : semiconductors * chalcogenides * X-ray diffraction Subject RIV: CA - Inorganic Chemistry Impact factor: 2.048, year: 2015 http://www.sciencedirect.com/science/article/pii/S0022369715000670

  20. High – temperature thermoelectric properties of Hg – doped CuInTe2

    Czech Academy of Sciences Publication Activity Database

    Kucek, V.; Drašar, Č.; Kašparová, J.; Plecháček, T.; Navrátil, Jiří; Vlček, Milan; Beneš, L.

    2015-01-01

    Roč. 118, č. 12 (2015), 125105-1 - 125105-7 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : thermoelectric materials * Hall coefficient * Seebeck coefficient Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

  1. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  2. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  3. Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

    Energy Technology Data Exchange (ETDEWEB)

    Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

    2003-05-15

    We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

  4. Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

    2018-06-01

    In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

  5. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  6. Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily Be-doped ZnSe ternaries

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shabina; Singh, Pankaja [Barkatullah University, Bhopal (India); Mazher, Javed [Addis Ababa University, Addis Ababa (Ethiopia)

    2014-02-15

    Inherently soft zinc-selenides have been hardened through beryllium doping. High-quality stoichiometric ternaries of Be{sub x}Zn{sub 1-x}Se have been synthesized by using the Bridgeman technique. State-of-art X-ray absorption spectroscopy is performed by varying the concentration of the cationic dopant, Be, from 6% to 55% in the host ZnSe. Extended X-ray absorption fine structure analyses are carried out to study the next-neighbor and next nearest neighbor atomic positions, nature of the substitutional doping, extent of bond length homogeneity, the presence of involuntary contrast among path distances, and the crossover from a soft to a hard character of the ternary with increasing Be concentration. Our results indicate the presence of a non-regular impulsive hardening in the ternary with a disparity at the lower and the higher Be-doping levels, which are discussed vis-a-vis self-accommodation of substitutional dopants in the host lattice.

  7. High-beam quality, high-efficiency laser based on fiber with heavily Yb(3+)-doped phosphate core and silica cladding.

    Science.gov (United States)

    Egorova, O N; Semjonov, S L; Medvedkov, O I; Astapovich, M S; Okhrimchuk, A G; Galagan, B I; Denker, B I; Sverchkov, S E; Dianov, E M

    2015-08-15

    We have fabricated and tested a composite fiber with an Yb(3+)-doped phosphate glass core and silica cladding. Oscillation with a slope efficiency of 74% was achieved using core pumping at 976 nm with fiber lengths of 48-90 mm in a simple laser configuration, where the cavity was formed by a high-reflectivity Bragg grating and the cleaved fiber end. The measured M(2) factors were as low as 1.05-1.22 even though the fiber was multimode at the lasing wavelength.

  8. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  9. Faraday rotation and photoluminescence in heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics.

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A; Wondraczek, Lothar

    2015-03-10

    We report on the magneto-optical (MO) properties of heavily Tb(3+)-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb(3+) ion concentration of up to 9.7 × 10(21) cm(-3), the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400-1500 nm is found for a Tb(3+) concentration of ~6.5 × 10(21) cm(-3). For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb(3+) photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10(-21) cm(2) for ~ 5.0 × 10(21) cm(-3) Tb(3+). This results in an optical gain parameter σem*τ of ~2.5 × 10(-24) cm(2)s, what could be of interest for implementation of a Tb(3+) fiber laser.

  10. Faraday rotation and photoluminescence in heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses for fiber-integrated magneto-optics

    Science.gov (United States)

    Gao, Guojun; Winterstein-Beckmann, Anja; Surzhenko, Oleksii; Dubs, Carsten; Dellith, Jan; Schmidt, Markus A.; Wondraczek, Lothar

    2015-01-01

    We report on the magneto-optical (MO) properties of heavily Tb3+-doped GeO2-B2O3-Al2O3-Ga2O3 glasses towards fiber-integrated paramagnetic MO devices. For a Tb3+ ion concentration of up to 9.7 × 1021 cm−3, the reported glass exhibits an absolute negative Faraday rotation of ~120 rad/T/m at 632.8 nm. The optimum spectral ratio between Verdet constant and light transmittance over the spectral window of 400–1500 nm is found for a Tb3+ concentration of ~6.5 × 1021 cm−3. For this glass, the crystallization stability, expressed as the difference between glass transition temperature and onset temperature of melt crystallization exceeds 100 K, which is a prerequisite for fiber drawing. In addition, a high activation energy of crystallization is achieved at this composition. Optical absorption occurs in the NUV and blue spectral region, accompanied by Tb3+ photoluminescence. In the heavily doped materials, a UV/blue-to-green photo-conversion gain of ~43% is achieved. The lifetime of photoluminescence is ~2.2 ms at a stimulated emission cross-section σem of ~1.1 × 10−21 cm2 for ~ 5.0 × 1021 cm−3 Tb3+. This results in an optical gain parameter σem*τ of ~2.5 × 10−24 cm2s, what could be of interest for implementation of a Tb3+ fiber laser. PMID:25754819

  11. Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

    Science.gov (United States)

    Kim, B. W.; Majerfeld, A.

    1996-02-01

    We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

  12. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  13. Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

    1990-01-01

    Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

  14. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  15. Heavily doped M1−xUxF2+2x fluorites studied by quasielastic neutron scattering(M=Ba) and specific heat measurements (M=Pb)

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1983-01-01

    of doping is an increase of the thermally generated defect concentration; at high temperatures the effect is reversed. The microscopic defect structure of Ba0.9U0.1F2.2 has been studied by diffuse quasielastic neutron scattering experiments at room temperature. The experimental observations are in good......The thermal generation of defects in pure and doped Pb1−xUxF2+2x (x=0, 0.05and0.10) has been studied by specific heat measurements between 475 k and 875 k. A simple phenomenological mean field thermodynamic model has been developed and used to interpret the data. At low temperatures the result...

  16. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  17. Intermediate band mobility in heavily titanium-doped silicon layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, G.; Olea, J.; Martil, I.; Pastor, D. [Dpto. de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Marti, A.; Antolin, E.; Luque, A [Instituto de Energia Solar, Universidad Politecnica de Madrid, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Ciudad Universitaria sn, 28040 Madrid (Spain)

    2009-09-15

    The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10{sup 21} cm{sup -3}, are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (author)

  18. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  19. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  20. Rapid enhancement of nodal quasiparticle mass with heavily underdoping in Bi2212

    Science.gov (United States)

    Anzai, Hiroaki; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Ishikado, Motoyuki; Fujita, Kazuhiro; Ishida, Shigeyuki; Uchida, Shin-ichi; Ino, Akihiro

    2018-05-01

    We report substantial advance of our low-energy angle-resolved photoemission study of nodal quasiparticles in Bi2Sr2CaCu2O8+δ. The new data cover the samples from underdoped down to heavily underdoped levels. We also present the nodal Fermi velocities that determined by using an excitation-photon energy of hν = 7.0 eV over a wide doping range. The consistency between the results with hν = 8.1 and 7.0 eV allows us to rule out the effect of photoemission matrix elements. In comparison with the data previously reported, the nodal effective mass increases by a factor of ∼ 1.5 in going from optimally doped to heavily underdoped levels. We find a rapid enhancement of the nodal quasiparticle mass at low doping levels near the superconductor-to-insulator transition. The effective coupling spectrum, λ (ω) , is extracted directly from the energy derivatives of the quasiparticle dispersion and scattering rate, as a causal function of the mass enhancement factor. A steplike increase in Reλ (ω) around ∼ 65 meV is demonstrated clearly by the Kramers-Kronig transform of Imλ (ω) . To extract the low-energy renormalization effect, we calculated a simple model for the electron-boson interaction. This model reveals that the contribution of the renormalization at | ω | ≤ 15 meV to the quasiparticle mass is larger than that around 65 meV in underdoped samples.

  1. Remote Excavation of Heavily Contaminated UXO Sites. The Range Master

    National Research Council Canada - National Science Library

    Crandall, Alan L

    2007-01-01

    USA Environmental, Inc., and Timberline Environmental Services, Inc., developed the Range Master, a remote controlled scraper with an integrated power screen, to excavate and sift the top 12 inches of heavily contaminated UXO sites...

  2. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  3. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Guide 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have how been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design of heavily insulated pipe systems are then recommended

  4. Further considerations for damping in heavily insulated pipe systems

    International Nuclear Information System (INIS)

    Anderson, M.J.; Lindquist, M.R.; Severud, L.K.

    1985-01-01

    Over the past several years a body of test data has been accumulated which demonstrates that damping in small diameter heavily insulated pipe systems is much larger than presently recommended by Regulatory Code 1.61. This data is generally based on pipe systems using a stand-off insulation design with a heater annulus. Additional tests have now been completed on similar pipe systems using a strap-on insulation design without the heater annulus. Results indicate some reduction in damping over the stand-off designs. Test data has also been obtained on a larger sixteen-inch diameter heavily insulated pipe system. Results of these two additional test series are presented. Revised damping values for seismic design for heavily insulated pipe systems are then recommended

  5. Explosive phenomena in heavily irradiated NaCl

    NARCIS (Netherlands)

    denHartog, HW; Vainshtein, DI; Matthews, GE; Williams, RT

    1997-01-01

    In heavily irradiated NaCl crystals explosive phenomena can be initiated during irradiation or afterwards when samples are heated to temperatures between 100 and 250 degrees C. During irradiation of NaCl Na and Cl-2 precipitates and void structures are produced along with the accumulation of stored

  6. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fan, E-mail: f.li.1@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Sharma, Yogesh; Shah, Vishal; Jennings, Mike [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Pérez-Tomás, Amador [ICN2 – Institut Catala de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Myronov, Maksym [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Fisher, Craig [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Leadley, David [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Mawby, Phil [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-10-30

    Highlights: • Nitrogen is fully activated by 1175 °C annealing for 1.5 × 10{sup 19} cm{sup −3} doped 3C-SiC. • Free donor concentration is found to readily saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. • 3C-SiC is found to have complete donor thermal ionization above 150 K. • Donor in 1.5 × 10{sup 19} cm{sup −3} nitrogen implanted 3C-SiC has an energy level ∼15 meV. • The SiO{sub 2} cap is found to have a bigger influence on low and medium doped samples. - Abstract: A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6 × 10{sup 20} cm{sup −3} at 20 K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5 × 10{sup 19} cm{sup −3}, donor level 15 meV) to ∼12% for 6 × 10{sup 20} cm{sup −3}. Free donors are found to saturate in 3C-SiC at ∼7 × 10{sup 19} cm{sup −3}. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO{sub 2} layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4 mΩ cm) has been observed for medium doped (4 × 10{sup 19} cm{sup −3}) sample with PIA 1375 °C 2 h without a SiO{sub 2} cap.

  7. Diffusivity-mobility relationship for heavily doped semiconductors exhibiting band tails

    International Nuclear Information System (INIS)

    Khan, Arif; Das, Atanu

    2010-01-01

    A relationship between the mobility and diffusivity of semiconductors exhibiting band tails has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors, and to semiconductors with and without band tails. It is suitable for studying electrical transport in these semiconductors.

  8. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

    Czech Academy of Sciences Publication Activity Database

    Savchenko, Dariia

    2015-01-01

    Roč. 117, č. 4 (2015), "045708-1"-"045708-6" ISSN 0021-8979 R&D Projects: GA ČR GP13-06697P; GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : electron spin resonance * conduction electrons * 6H SiC * insulator-metal transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  9. On magnetic ordering in heavily sodium substituted hole doped lanthanum manganites

    Energy Technology Data Exchange (ETDEWEB)

    Sethulakshmi, N. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Unnimaya, A.N. [Centre for Materials for Electronic Technology (CMET), Thrissur 680581, Kerala (India); Al-Omari, I.A.; Al-Harthi, Salim [Department of Physics, Sultan Qaboos University, PC 123 Muscat (Oman); Sagar, S. [Government College for Women, Thiruvananthapuram 695014, Kerala (India); Thomas, Senoy [Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram 695019, Kerala (India); Srinivasan, G. [Department of Physics, Oakland University, Rochester (United States); Anantharaman, M.R., E-mail: mraiyer@yahoo.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2015-10-01

    Mixed valence manganite system with monovalent sodium substituted lanthanum manganites form the basis of the present work. Lanthanum manganites belonging to the series La{sub 1−x}Na{sub x}MnO{sub 3} with x=0.5–0.9 were synthesized using modified citrate gel method. Variation of lattice parameters and unit cell volume with Na concentration were analyzed and the magnetization measurements indicated ferromagnetic ordering in all samples at room temperature. Low temperature magnetization behavior indicated that all samples exhibit antiferromagnetism along with ferromagnetism and it has also been observed that antiferromagnetic ordering dominates ferromagnetic ordering as concentration is increased. Evidence for such a magnetic inhomogeneity in these samples has been confirmed from the variation in Mn{sup 3+}/Mn{sup 4+} ion ratio from X-ray Photoelectron Spectroscopy and from the absorption peak studies using Ferromagnetic Resonance Spectroscopy. - Highlights: • Higher substitution of more than 50 percent of monovalent ion, sodium for La sites in lanthanum manganites scarce in literature. • Structural studies using XRD and further structure refinement by Rietveld refinement confirmed orthorhombic pbnm spacegroup. • Ferromagnetic behavior at room temperature with saturation magnetization decreasing with increase in sodium concentration. • M vs T measurements using FC ZFC proved coexisting FM/AFM behavior arising from exchange interactions between different valence states of Mn ions. • Disparity in ratio of Mn valence ions indicated presence of vacancies providing the role of vacancies and oxygen stoichiometry in deciding magnetic inhomogeneity.

  10. Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

    Czech Academy of Sciences Publication Activity Database

    Reddy, N.K.; Devika, M.; Prashantha, M.; Rames, K.; Ivanova, Z.G.; Zavadil, Jiří

    2013-01-01

    Roč. 15, 3-4 (2013), s. 182-186 ISSN 1454-4164 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985882 Keywords : Chalcogenide thin films * Optical properties * Photoinduced changes Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.563, year: 2013

  11. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  12. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  13. Electrochemical Decontamination of Painted and Heavily Corroded Metals

    International Nuclear Information System (INIS)

    Marczak, S.; Anderson, J.; Dziewinski, J.

    1998-01-01

    The radioactive metal wastes that are generated from nuclear fuel plants and radiochemical laboratories are mainly contaminated by the surface deposition of radioactive isotopes. There are presently several techniques used in removing surface contamination involving physical and chemical processes. However, there has been very little research done in the area of soiled, heavily oxidized, and painted metals. Researchers at Los Alamos National Laboratory have been developing electrochemical procedures for the decontamination of bare and painted metal objects. These methods have been found to be effective on highly corroded as well as relatively new metals. This study has been successful in decontaminating projectiles and shrapnel excavated during environmental restoration projects after 40+ years of exposure to the elements. Heavily corroded augers used in sampling activities throughout the area were also successfully decontaminated. This process has demonstrated its effectiveness and offers several advantages over the present metal decontamination practices of media blasting and chemical solvents. These advantages include the addition of no toxic or hazardous chemicals, low operating temperature and pressure, and easily scaleable equipment. It is in their future plans to use this process in the decontamination of gloveboxes destined for disposal as TRU waste

  14. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  15. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  16. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  17. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  18. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  19. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  20. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  1. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  2. Tuning electronic properties of In2O3 nanowires by doping control

    International Nuclear Information System (INIS)

    Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

    2004-01-01

    We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

  3. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  4. Synthesis, structure and properties of heavily Mn-doped perovskite-type SrTiO.sub.3./sub. nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Trepakov, Vladimír; Makarova, Marina; Stupakov, Oleksandr; Tereshina, Evgeniya; Drahokoupil, Jan; Čerňanský, Marian; Potůček, Zdeněk; Borodavka, Fedir; Valvoda, V.; Lynnyková, Anna; Jäger, Aleš; Jastrabík, Lubomír; Dejneka, Alexandr

    2014-01-01

    Roč. 143, č. 2 (2014), s. 570-577 ISSN 0254-0584 R&D Projects: GA TA ČR TA01010517; GA ČR GAP108/12/1941; GA ČR GBP108/12/G043; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : nanostructures * oxides * ferroelectricity * magnetic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.259, year: 2014 http://www.sciencedirect.com/science/article/pii/S0254058413007141

  5. The infrared optical properties of heavily B-doped nanocrystalline diamond films on low alkaline glass substrates

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Nesladek, M.

    2006-01-01

    Roč. 203, č. 12 (2006), s. 3016-3020 ISSN 0031-8965 R&D Projects: GA AV ČR KJB100100623 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond * boron * dielectric function * glass Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.221, year: 2006

  6. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  7. Electrical property studies of neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1978-01-01

    Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

  8. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  9. NuSTAR observations of heavily obscured quasars at z ~ 0.5

    DEFF Research Database (Denmark)

    Lansbury, G. B.; Alexander, D. M.; Del Moro, A.

    2014-01-01

    We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength...

  10. Gemcitabine and capecitabine for heavily pre-treated metastatic colorectal cancer patients

    DEFF Research Database (Denmark)

    Spindler, Karen-Lise G; Pallisgaard, Niels; Andersen, Rikke F

    2014-01-01

    AIM: We investigated the efficacy and safety of capecitabine and gemcitabin (GemCap) in heavily pre-treated, therapy-resistant metastatic colorectal cancer (mCRC) patients and the clinical importance of cell-free DNA (cfDNA) measurement. PATIENTS AND METHODS: Patients' inclusion criteria included...

  11. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    NARCIS (Netherlands)

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the

  12. Becoming a Heavily Tattooed Young Body: From a Bodily Experience to a Body Project

    Science.gov (United States)

    Ferreira, Vitor Sérgio

    2014-01-01

    Why some young people start to tattoo their bodies? And why some of them keep going on with this practice, until having all body tattooed? What doing so means to them? These are some of the questions that underlie a qualitative research project carried out in Portugal on heavily tattooed young people. In this article, the author discusses their…

  13. Dual Inhibition of EGFR and VEGF in Heavily Pretreated Patients with Metastatic Colorectal Cancer

    DEFF Research Database (Denmark)

    Larsen, Finn Ole; Markussen, Alice; Nielsen, Dorte

    2017-01-01

    : The combination of irinotecan, bevacizumab, and cetuximab/panitumumab is safe and shows a toxicity profile corresponding to what is expected from the agents alone. The results indicate that the combination in the 4th line may result in a high rate of disease control in heavily pretreated patients with metastatic...

  14. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  15. Operation of heavily irradiated silicon detectors in non-depletion mode

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

    2006-01-01

    The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

  16. Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

    Science.gov (United States)

    Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

    2017-08-01

    This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

  17. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  18. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  19. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  20. Addition of sunitinib to cetuximab and irinotecan in patients with heavily pre-treated advanced colorectal cancer

    DEFF Research Database (Denmark)

    Qvortrup, Camilla; Jensen, Benny Vittrup; Jørgensen, Trine Lembrecht

    2010-01-01

    Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented.......Results of continuous sunitinib, in combination with cetuximab and irinotecan every other week (SIC) for compassionate use in heavily pre-treated patients with mCRC are presented....

  1. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

    2001-01-01

    The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

  2. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  3. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  4. Nice Guys Finish Last: Are People with Higher Tax Morale Taxed more Heavily?

    OpenAIRE

    Philipp Doerrenberg; Denvil Duncan; Clemens Fuest; Andreas Peichl

    2012-01-01

    This paper is the first to provide evidence of efficient taxation of groups with heterogeneous levels of 'tax morale'. We set up an optimal income tax model where high tax morale implies a high subjective cost of evading taxes. The model predicts that 'nice guys finish last': groups with higher tax morale will be taxed more heavily, simply because taxing them is less costly. Based on unique cross-country micro data and an IV approach to rule out reverse causality, we find empirical support fo...

  5. In situ observation of triple junction motion during recovery of heavily deformed aluminum

    DEFF Research Database (Denmark)

    Yu, Tianbo; Hughes, Darcy A.; Hansen, Niels

    2015-01-01

    -junctions are pinned by deformation-induced interconnecting and lamellar boundaries, which slow down the recovery process and lead to a stop-go migration pattern. This pinning mechanism stabilizes the deformation microstructure, i.e. the structure is stabilized by balancing the driving and pinning forces controlling......Microstructural evolution during in situ annealing of heavily cold-rolled aluminum has been studied by transmission electron microscopy, confirming that an important recovery mechanism is migration of triple junctions formed by three lamellar boundaries (Y-junctions). The migrating Y...

  6. AFM of metallic nano-particles and nano-structures in heavily irradiated NaCl

    OpenAIRE

    Gaynutdinov, R; Vainshtein, DI; Hak, SJ; Tolstikhina, A; Den Hartog, HW

    2003-01-01

    AFM investigations are reported for heavily, electron irradiated NaCl crystals in ultra high vacuum (UHV) in the non-contact mode-with an UHV AFM/STM Omicron system. To avoid chemical reactions between the radiolytic Na and oxygen and water, the irradiated samples were cleaved and prepared for the experiments in UHV At the surface of freshly cleaved samples, we have observed sodium nano-precipitates with shapes, which depend on the irradiation dose and the volume fraction of the radiolytic Na...

  7. An X-ray wave theory for heavily distorted crystals. 1

    International Nuclear Information System (INIS)

    Ohkawa, T.; Hashimoto, H.

    1985-01-01

    An X-ray diffraction theory is developed of monochromatic waves having spherical wave front, which is applicable to an interpretation of divergent X-ray diffraction images of crystals containing arbitral types of strain field. The theory is divided into two parts. In part I, Takagi's theory is expanded by introducing amplitude and phase correction functions and a new improved representation for the X-ray diffraction theory is given. In part II dispersion surfaces in heavily distorted crystals are discussed, and in the discussion the resonance shift functions are introduced. These formulations can lead to a complete understanding of the extinction phenomena. (author)

  8. Quantitative Microstructural Characterization of Thick Aluminum Plates Heavily Deformed Using Equal Channel Angular Extrusion

    DEFF Research Database (Denmark)

    Mishin, Oleg; Segal, V.M.; Ferrasse, S.

    2012-01-01

    A detailed quantitative analysis of the microstructure has been performed in three orthogonal planes of 15-mm-thick aluminum plates heavily deformed via two equal channel angular extrusion (ECAE) routes. One route was a conventional route A with no rotation between passes. Another route involved...... sequential 90 deg rotations about the normal direction (ND) between passes. The microstructure in the center of these plates, and especially the extent of microstructural heterogeneity, has been characterized quantitatively and compared with that in bar samples extruded via either route A or route Bc with 90...... Bc. © The Minerals, Metals & Materials Society and ASM International 2012...

  9. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  10. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  11. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  12. Health-enhancing doping controls

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    2010-01-01

    Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...

  13. Stark shift of impurity doped quantum dots: Role of noise

    Science.gov (United States)

    Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

    2018-02-01

    Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

  14. Marine reserves and reproductive biomass: a case study of a heavily targeted reef fish.

    Directory of Open Access Journals (Sweden)

    Brett M Taylor

    Full Text Available Recruitment overfishing (the reduction of a spawning stock past a point at which the stock can no longer replenish itself is a common problem which can lead to a rapid and irreversible fishery collapse. Averting this disaster requires maintaining a sufficient spawning population to buffer stochastic fluctuations in recruitment of heavily harvested stocks. Optimal strategies for managing spawner biomass are well developed for temperate systems, yet remain uncertain for tropical fisheries, where the danger of collapse from recruitment overfishing looms largest. In this study, we explored empirically and through modeling, the role of marine reserves in maximizing spawner biomass of a heavily exploited reef fish, Lethrinus harak around Guam, Micronesia. On average, spawner biomass was 16 times higher inside the reserves compared with adjacent fished sites. Adult density and habitat-specific mean fish size were also significantly greater. We used these data in an age-structured population model to explore the effect of several management scenarios on L. harak demography. Under minimum-size limits, unlimited extraction and all rotational-closure scenarios, the model predicts that preferential mortality of larger and older fish prompt dramatic declines in spawner biomass and the proportion of male fish, as well as considerable declines in total abundance. For rotational closures this occurred because of the mismatch between the scales of recovery and extraction. Our results highlight how alternative management scenarios fall short in comparison to marine reserves in preserving reproductively viable fish populations on coral reefs.

  15. Cytogenetic abnormalities of the descendants of permanent residents of heavily contaminated East Kazakhstan.

    Science.gov (United States)

    Chaizhunusova, Nailya; Madiyeva, Madina; Tanaka, Kimio; Hoshi, Masaharu; Kawano, Noriyuki; Noso, Yoshihiro; Takeichi, Nobuo; Rakhypbekov, Tolebay; Urazalina, Nailya; Dovgal, Galina; Rymbaeva, Tamara; Tokanova, Sholpan; Beisengazina, Meruert; Kembayeva, Kulypash; Inoue, Ken

    2017-11-01

    More than 400 nuclear explosion tests were conducted at the Semipalatinsk Nuclear Test Site (SNTS) and significant radioactive substances were released. The long-term consequences of the activities at the SNTS and the appearance of any hereditary effects remain insufficiently studied about 25 years after the test site was closed. The population living in villages near the SNTS are considered to have been heavily exposed to external and internal radiation. This study aims to perform an assessment and comprehensive cytogenetic analysis of the inhabitants living near the SNTS, and their first-(F1) and second-(F2) generation children. Residents of the East Kazakhstan region living in the area covered by the former SNTS were included in the study. To evaluate the hereditary effects of nuclear testing, comprehensive chromosome analyses were performed in lymphocytes using conventional Giemsa and fluorescent in situ hybridization methods in 115 F1 and F2 descendants in the villages of Dolon and Sarzhal, which were heavily contaminated. The parents of the subjects had permanently lived in the villages. A higher number of stable-type chromosome aberrations such as translocations was found in these residents than in 80 residents of the control area, Kokpecty, which indicates the possibility that radiation had biological effects on the exposed subjects.

  16. Yield strength of a heavily drawn Cu-20% Nb filamentary microcomposite

    International Nuclear Information System (INIS)

    Hong, S.I.

    1998-01-01

    It has been well documented that heavily-drawn, copper-niobium microcomposites possess high strength and high conductivity. Since niobium has little solubility in copper, the conductivity of the copper is not strongly affected by the addition of niobium. Following extensive mechanical deformation of Cu-Nb, niobium dendrites transform into fine niobium ribbons as a result of the niobium texture upon drawing. This nanostructure contributes to the ultrahigh strength of Cu-Nb microcomposites. The strength of heavily deformed Cu-Nb exceeds that predicted by the rule-of-mixtures (ROM), and a fundamental understanding of the strengthening mechanisms involved has been the subject of much discussion. Spitzig and his coworkers suggests a barrier strengthening model while Funkenbusch and Courtney believe that stored dislocations have a role in substructural hardening. Hangen and Raabe recently proposed an analytical model for the calculation of the yield strength of Cu-Nb microcomposite. The model of Hangen and Raabe and that of Spitzig and his coworkers have a great deal of resemblance since both models attribute the strength to the difficulty of propagating plastic flow through the interface. The purpose of this study was to enhance the understanding of the strengthening mechanisms associated with Cu-Nb microcomposites by examining the previous studies on mechanical and microstructural stability of Cu-based microcomposites

  17. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  18. Gene doping in sports.

    Science.gov (United States)

    Unal, Mehmet; Ozer Unal, Durisehvar

    2004-01-01

    Gene or cell doping is defined by the World Anti-Doping Agency (WADA) as "the non-therapeutic use of genes, genetic elements and/or cells that have the capacity to enhance athletic performance". New research in genetics and genomics will be used not only to diagnose and treat disease, but also to attempt to enhance human performance. In recent years, gene therapy has shown progress and positive results that have highlighted the potential misuse of this technology and the debate of 'gene doping'. Gene therapies developed for the treatment of diseases such as anaemia (the gene for erythropoietin), muscular dystrophy (the gene for insulin-like growth factor-1) and peripheral vascular diseases (the gene for vascular endothelial growth factor) are potential doping methods. With progress in gene technology, many other genes with this potential will be discovered. For this reason, it is important to develop timely legal regulations and to research the field of gene doping in order to develop methods of detection. To protect the health of athletes and to ensure equal competitive conditions, the International Olympic Committee, WADA and International Sports Federations have accepted performance-enhancing substances and methods as being doping, and have forbidden them. Nevertheless, the desire to win causes athletes to misuse these drugs and methods. This paper reviews the current status of gene doping and candidate performance enhancement genes, and also the use of gene therapy in sports medicine and ethics of genetic enhancement. Copyright 2004 Adis Data Information BV

  19. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Challenges and threats to implementing the fight against doping in sport.

    Science.gov (United States)

    Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

    2014-05-01

    Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

  2. Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

    DEFF Research Database (Denmark)

    Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

    2015-01-01

    The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

  3. Launch prices for new pharmaceuticals in the heavily regulated and subsidized Spanish market, 1995-2007.

    Science.gov (United States)

    Puig-Junoy, Jaume; López-Valcárcel, Beatriz González

    2014-06-01

    This paper provides empirical evidence on the explanatory factors affecting introductory prices of new pharmaceuticals in a heavily regulated and highly subsidized market. We collect a data set consisting of all new chemical entities launched in Spain between 1997 and 2005, and model launch prices following an extended version of previous economic models. We found that, unlike in the US and Sweden, therapeutically "innovative" products are not overpriced relative to "imitative" ones after having controlled for other factors. Price setting is mainly used as a mechanism to adjust for inflation independently of the degree of innovation. The drugs that enter through the centralized EMA approval procedure are overpriced, which may be a consequence of market globalization and international price setting. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  4. Facilitating political decisions using species distribution models to assess restoration measures in heavily modified estuaries.

    Science.gov (United States)

    Heuner, Maike; Weber, Arnd; Schröder, Uwe; Kleinschmit, Birgit; Schröder, Boris

    2016-09-15

    The European Water Framework Directive requires a good ecological potential for heavily modified water bodies. This standard has not been reached for most large estuaries by 2015. Management plans for estuaries fall short in linking implementations between restoration measures and underlying spatial analyses. The distribution of emergent macrophytes - as an indicator of habitat quality - is here used to assess the ecological potential. Emergent macrophytes are capable of settling on gentle tidal flats where hydrodynamic stress is comparatively low. Analyzing their habitats based on spatial data, we set up species distribution models with 'elevation relative to mean high water', 'mean bank slope', and 'length of bottom friction' from shallow water up to the vegetation belt as key predictors representing hydrodynamic stress. Effects of restoration scenarios on habitats were assessed applying these models. Our findings endorse species distribution models as crucial spatial planning tools for implementing restoration measures in modified estuaries. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Chromosome aberrations of bone marrow cells in heavily exposed atomic bomb survivors

    International Nuclear Information System (INIS)

    Tanaka, Kimio; Kamada, Nanao; Kuramoto, Atsushi; Ohkita, Takeshi

    1986-01-01

    Seven hundred and ten bone marrow cells from 13 A-bomb survivors, who were heavily exposed to atomic radiation, were examined using chromosome banding method. An average frequency of chromosome aberrations was 17 %. The most common structural abnormality was translocation (47 %), followed by complex aberrations involving three or more chromosomes (32 %). These abnormalities were frequently seen in A-bomb survivors exposed to estimated doses of 3.5 - 4.0 Gy. Eighty two percent of the structural aberrations were stable. Diploid cells were seen in 0.4 % and tetraploid cells were seen in 0.7 %. The frequency of breakpoint sites was high in chromosomes 1 and 17; while it was low in chromosomes 3, 6, 9, and 11. Abnormal clones were seen in one of the 13 survivors. Chromosome aberrations common to the bone marrow cells and peripheral lymphocytes were not seen in the same individual. (Namekawa, K.)

  6. Induction hardening of tool steel for heavily loaded aircraft engine components

    Directory of Open Access Journals (Sweden)

    Rokicki P.

    2017-03-01

    Full Text Available Induction hardening is an innovative process allowing modification of the materials surface with more effective, cheaper and more reproducible way to compare with conventional hardening methods used in the aerospace industry. Unfortunately, high requirements and strict regulation concerning this branch of the industry force deep research allowing to obtain results that would be used for numerical modelling of the process. Only by this way one is able to start the industrial application of the process. The main scope of presented paper are results concerning investigation of microstructure evolution of tool steel after single-frequency induction hardening process. The specimens that aim in representing final industrial products (as heavily loaded gears, were heat- -treated with induction method and subjected to metallographic preparation, after which complex microstructure investigation was performed. The results obtained within the research will be a basis for numerical modelling of the process of induction hardening with potential to be introduced for the aviation industrial components.

  7. AN AMELIORATED DETECTION STATISTICS FOR ADAPTIVE MASK MEDIAN FILTRATION OF HEAVILY NOISED DIGITAL IMAGES

    Directory of Open Access Journals (Sweden)

    Geeta Hanji

    2016-11-01

    Full Text Available Noise reduction is an important area of research in image processing applications. The performance of the digital image noise filtering method primarily depends upon the accuracy of noise detection scheme. This paper presents an effective detector based, adaptive mask, median filtration of heavily noised digital images affected with fixed value (or salt and pepper impulse noise. The proposed filter presents a novel approach; an ameliorated Rank Ordered Absolute Deviation (ROAD statistics to judge whether the input pixel is noised or noise free. If a pixel is detected as corrupted, it is subjected to adaptive mask median filtration; otherwise, it is kept unchanged. Extensive experimental results and comparative performance evaluations demonstrate that the proposed filter outperforms the existing decision type, median based filters with powerful noise detectors in terms of objective performance measures and visual retrieviation accuracy.

  8. Ecophysiological characterization of early successional biological soil crusts in heavily human-impacted areas

    Science.gov (United States)

    Szyja, Michelle; Büdel, Burkhard; Colesie, Claudia

    2018-04-01

    Ecophysiological characterizations of photoautotrophic communities are not only necessary to identify the response of carbon fixation related to different climatic factors, but also to evaluate risks connected to changing environments. In biological soil crusts (BSCs), the description of ecophysiological features is difficult, due to the high variability in taxonomic composition and variable methodologies applied. Especially for BSCs in early successional stages, the available datasets are rare or focused on individual constituents, although these crusts may represent the only photoautotrophic component in many heavily disturbed ruderal areas, such as parking lots or building areas with increasing surface area worldwide. We analyzed the response of photosynthesis and respiration to changing BSC water contents (WCs), temperature and light in two early successional BSCs. We investigated whether the response of these parameters was different between intact BSC and the isolated dominating components. BSCs dominated by the cyanobacterium Nostoc commune and dominated by the green alga Zygogonium ericetorum were examined. A major divergence between the two BSCs was their absolute carbon fixation rate on a chlorophyll basis, which was significantly higher for the cyanobacterial crust. Nevertheless, independent of species composition, both crust types and their isolated organisms had convergent features such as high light acclimatization and a minor and very late-occurring depression in carbon uptake at water suprasaturation. This particular setup of ecophysiological features may enable these communities to cope with a high variety of climatic stresses and may therefore be a reason for their success in heavily disturbed areas with ongoing human impact. However, the shape of the response was different for intact BSC compared to separated organisms, especially in absolute net photosynthesis (NP) rates. This emphasizes the importance of measuring intact BSCs under natural

  9. Relationship between levels of serum creatinine and perirenal hyperintensity on heavily T2-weighted MR images

    Energy Technology Data Exchange (ETDEWEB)

    Erden, Ayse, E-mail: ayse.erden@medicine.ankara.edu.tr [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Sahin, Burcu Savran, E-mail: bsavrans@hotmail.com [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Orgodol, Horolsuren, E-mail: hoogii99@yahoo.com [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Erden, Ilhan, E-mail: erden@medicine.ankara.edu.tr [Ankara University, School of Medicine, Department of Radiology, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey); Biyikli, Zeynep, E-mail: zeynep.biyikli@gmail.com [Ankara University, School of Medicine, Department of Biostatistics, Talatpasa Bulvari, Sihhiye, 06100 Ankara (Turkey)

    2011-11-15

    Objective: To determine the frequency of perirenal hyperintensity on heavily T2-weighted images and to evaluate its relationship with serum creatinine levels. Subjects and methods: Axial and coronal single-shot fast spin-echo images which have been originally obtained for MR cholangiopancreatography in 150 subjects were examined by two observers individually for the presence of perirenal hyperintensity. The morphologic properties of perirenal hyperintensity (peripheral rim-like, discontinuous, polar) were recorded. Chi square test was used to test whether the frequencies of bilateral perirenal hyperintensity differ significantly in subjects with high serum creatinine levels and those with normal creatinine levels. This test was also used to compare the frequencies of perirenal hyperintensity in patients with and without renal cysts and in patients with and without corticomedullary differentiation. A p value of less than 0.05 was considered to be statistically significant. Results: The perirenal hyperintensity was identified in 40 of 150 cases (26.6%) on heavily T2-weighted image. Serum creatinine levels were high in 18 of 150 cases (12%). The perirenal hyperintensity was present in 11 of 18 subjects (61%) with high serum creatinine levels and 26 of 132 subjects (19.7%) with normal creatinine levels. The difference of rates in two groups was statistically significant. Odds ratio was 6407 (95% confidence interval 2264-18,129). The frequency of perirenal hyperintensity was also significantly higher in subjects with renal cyst or cysts in whom serum creatinine levels were normal (p < 0.05) (37.5% vs. 11.8%). Conclusion: Perirenal hyperintensities are more frequent in patients with high serum creatinine levels. They are also more common in patients with simple renal cysts.

  10. Relationship between levels of serum creatinine and perirenal hyperintensity on heavily T2-weighted MR images

    International Nuclear Information System (INIS)

    Erden, Ayse; Sahin, Burcu Savran; Orgodol, Horolsuren; Erden, Ilhan; Biyikli, Zeynep

    2011-01-01

    Objective: To determine the frequency of perirenal hyperintensity on heavily T2-weighted images and to evaluate its relationship with serum creatinine levels. Subjects and methods: Axial and coronal single-shot fast spin-echo images which have been originally obtained for MR cholangiopancreatography in 150 subjects were examined by two observers individually for the presence of perirenal hyperintensity. The morphologic properties of perirenal hyperintensity (peripheral rim-like, discontinuous, polar) were recorded. Chi square test was used to test whether the frequencies of bilateral perirenal hyperintensity differ significantly in subjects with high serum creatinine levels and those with normal creatinine levels. This test was also used to compare the frequencies of perirenal hyperintensity in patients with and without renal cysts and in patients with and without corticomedullary differentiation. A p value of less than 0.05 was considered to be statistically significant. Results: The perirenal hyperintensity was identified in 40 of 150 cases (26.6%) on heavily T2-weighted image. Serum creatinine levels were high in 18 of 150 cases (12%). The perirenal hyperintensity was present in 11 of 18 subjects (61%) with high serum creatinine levels and 26 of 132 subjects (19.7%) with normal creatinine levels. The difference of rates in two groups was statistically significant. Odds ratio was 6407 (95% confidence interval 2264-18,129). The frequency of perirenal hyperintensity was also significantly higher in subjects with renal cyst or cysts in whom serum creatinine levels were normal (p < 0.05) (37.5% vs. 11.8%). Conclusion: Perirenal hyperintensities are more frequent in patients with high serum creatinine levels. They are also more common in patients with simple renal cysts.

  11. Borazino-Doped Polyphenylenes.

    Science.gov (United States)

    Marinelli, Davide; Fasano, Francesco; Najjari, Btissam; Demitri, Nicola; Bonifazi, Davide

    2017-04-19

    The divergent synthesis of two series of borazino-doped polyphenylenes, in which one or more aryl units are replaced by borazine rings, is reported for the first time, taking advantage of the decarbonylative [4 + 2] Diels-Alder cycloaddition reaction between ethynyl and tetraphenylcyclopentadienone derivatives. Because of the possibility of functionalizing the borazine core with different groups on the aryl substituents at the N and B atoms of the borazino core, we have prepared borazino-doped polyphenylenes featuring different doping dosages and orientations. To achieve this, two molecular modules were prepared: a core and a branching unit. Depending on the chemical natures of the central aromatic module and the reactive group, each covalent combination of the modules yields one exclusive doping pattern. By means of this approach, three- and hexa-branched hybrid polyphenylenes featuring controlled orientations and dosages of the doping B 3 N 3 rings have been prepared. Detailed photophysical investigations showed that as the doping dosage is increased, the strong luminescent signal is progressively reduced. This suggests that the presence of the B 3 N 3 rings engages additional deactivation pathways, possibly involving excited states with an increasing charge-separated character that are restricted in the full-carbon analogues. Notably, a strong effect of the orientational doping on the fluorescence quantum yield was observed for those hybrid polyphenylene structures featuring low doping dosages. Finally, we showed that Cu-catalyzed 1,3-dipolar cycloaddition is also chemically compatible with the BN core, further endorsing the inorganic benzene as a versatile aromatic scaffold for engineering of molecular materials with tailored and exploitable optoelectronic properties.

  12. Spectroscopic XPEEM of highly conductive SI-doped GaN wires

    Energy Technology Data Exchange (ETDEWEB)

    Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

    2015-12-15

    Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

  13. Sanctions for doping in sport

    Directory of Open Access Journals (Sweden)

    Mandarić Sanja

    2014-01-01

    Full Text Available Top-level sport imposes new and more demanding physical and psychological pressures, and the desire for competing, winning and selfassertion leads athletes into temptation to use prohibited substances in order to achieve the best possible results. Regardless of the fact that the adverse consequences of prohibited substances are well-known, prestige and the need to dominate sports arenas have led to their use in sports. Doping is one of the biggest issues in sport today, and the fight against it is a strategic objective on both global and national levels. World Anti-Doping Agency, the International Olympic Committee, international sports federations, national anti-doping agencies, national sports federations, as well as governments and their repressive apparatuses are all involved in the fight against doping in sport. This paper points to a different etymology and phenomenology of doping, the beginnings of doping in sport, sports doping scandals as well as the most important international instruments regulating this issue. Also, there is a special reference in this paper to the criminal and misdemeanor sanctions for doping in sport. In Serbia doping in sport is prohibited by the Law on Prevention of Doping in Sports which came into force in 2005 and which prescribes the measures and activities aimed at prevention of doping in sport. In this context, the law provides for the following three criminal offenses: use of doping substances, facilitating the use of doping substances, and unauthorized production and putting on traffic of doping substances. In addition, aiming at curbing the abuse of doping this law also provides for two violations. More frequent and repetitive doping scandals indicate that doping despite long-standing sanctions is still present in sports, which suggests that sanctions alone have not given satisfactory results so far.

  14. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  15. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David

    2016-09-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  16. Reconceptualising the Gender of Fitness Doping: Performing and Negotiating Masculinity through Drug-Use Practices

    Directory of Open Access Journals (Sweden)

    Jesper Andreasson

    2015-08-01

    Full Text Available This article analyses self-portrayals and gender constructions among Swedish male bodybuilders who are engaged in fitness doping. The empirical material comes from a larger ethnographic investigation into gym culture. The results show that there is a strong propensity to conform with particular gender fantasies that rests heavily on a binary understanding of gendered, doped bodies. However, this storyline does not apprehend the entire self-presentation of the analysed drug users. Negotiations and inclusive subversions of traditional gender norms are also expressed. For example, the narratives show how the use of performance-enhancing substances makes it possible for (heterosexual men to approach, touch and express feelings of desire towards other men and their bodies. As such, this practice can be viewed as a contestation of hegemonic gender values, in which masculinity and fitness doping are detached from a quite heterosexist understanding, and turned into a symbolic world of homoerotic pleasure.

  17. Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

    CERN Document Server

    Hong, N H; Sakai, J; Iwasaki, H

    2003-01-01

    Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

  18. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

    International Nuclear Information System (INIS)

    DelAlamo, J.A.

    1989-01-01

    A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

  19. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

  20. Precise Th/U-dating of small and heavily coated samples of deep sea corals

    Science.gov (United States)

    Lomitschka, Michael; Mangini, Augusto

    1999-07-01

    Marine carbonate skeletons like deep-sea corals are frequently coated with iron and manganese oxides/hydroxides which adsorb additional thorium and uranium out of the sea water. A new cleaning procedure has been developed to reduce this contamination. In this further cleaning step a solution of Na 2EDTA (Na 2H 2T B) and ascorbic acid is used which composition is optimised especially for samples of 20 mg of weight. It was first tested on aliquots of a reef-building coral which had been artificially contaminated with powdered ferromanganese nodule. Applied on heavily contaminated deep-sea corals (scleractinia), it reduced excess 230Th by another order of magnitude in addition to usual cleaning procedures. The measurement of at least three fractions of different contamination, together with an additional standard correction for contaminated carbonates results in Th/U-ages corrected for the authigenic component. A good agreement between Th/U- and 14C-ages can be achieved even for extremely coated corals.

  1. Heavily T2-weighted MR myelography vs CT myelography in spontaneous intracranial hypotension.

    Science.gov (United States)

    Wang, Y-F; Lirng, J-F; Fuh, J-L; Hseu, S-S; Wang, S-J

    2009-12-01

    To assess the diagnostic accuracy of heavily T2-weighted magnetic resonance myelography (MRM) in patients with spontaneous intracranial hypotension (SIH). Patients with SIH were recruited prospectively, and first underwent MRM and then computed tomographic myelography (CTM). The results of MRM were validated with the gold standard, CTM, focusing on 1) CSF leaks along the nerve roots, 2) epidural CSF collections, and 3) high-cervical (C1-3) retrospinal CSF collections. Comparisons of these 3 findings between the 2 studies were made by kappa statistics and agreement rates. Targeted epidural blood patches (EBPs) were placed at the levels of CSF leaks if supportive treatment failed. Nineteen patients (6 men and 13 women, mean age 37.9 +/- 8.6 years) with SIH completed the study. MRM did not differ from CTM in the detection rates of CSF leaks along the nerve roots (84% vs 74%, p = 0.23), high-cervical retrospinal CSF collections (32% vs 16%, p = 0.13), and epidural CSF collections (89% vs 79%, p = 0.20). MRM demonstrated more spinal levels of CSF leaks (2.2 +/- 1.7 vs 1.5 +/- 1.5, p = 0.011) and epidural collections (12.2 +/- 5.9 vs 7.1 +/- 5.8, p localizing CSF leaks for patients with spontaneous intracranial hypotension. This noninvasive technique may be an alternative to computed tomographic myelography before targeted epidural blood patches.

  2. Pollination with heavily irradiated pollen in Nicotiana: induced parthenogenesis and embryological study

    International Nuclear Information System (INIS)

    Musial, K.; Przywara, L.

    1999-01-01

    Nicotiana crosses were pollinated in situ and in vitro with heavily irradiated pollen (500, 700, 1000 Gy) to induce parthenogenesis and to study the development of embryo and endosperm. Haploids were obtained after in situ pollination only; however, parthenogenetic proembryos occurred also after in vitro pollination. It was demonstrated that ovule culture following pollination offers a better chance to produce haploids than undisturbed pollination does. Pollination with irradiated pollen (PwIP) stron gly decreased the number of endosperm cells and the size of embryo sacs, and it affected the development of embryos; no significant differences between applied irradiation doses were found. Ovules with endosperm only, embryo only, and with both embryo and endosperm were observed. The most frequent were the ovules with endosperm only, the rarest with embryo only. A small amount of storage products occurred in the endosperm cells. The diploid chromosome number counted in the endosperm produced after PwIP points to their origin without fertilization. An interesting phenomenon observed after PwIP was vigorous growth of endothelium. (author)

  3. Misdiagnosis of X-linked retinitis pigmentosa in a choroideremia patient with heavily pigmented fundi.

    Science.gov (United States)

    Nanda, A; Salvetti, A P; Martinez-Fernandez de la Camara, C; MacLaren, R E

    2018-06-01

    Inherited retinal diseases are thought to be the leading cause of sight loss in the working age population. Mutations found in the RPGR and CHM genes cause retinitis pigmentosa (RP) and choroideremia, respectively. In the first instance, an X-linked family history of visual field loss commonly raises the suspicion of one of these two genes. In choroideremia, the classic description of a white fundal reflex secondary to the widespread chorioretinal degeneration was made over a hundred years ago in Caucasians. But, it is not so obvious in heavily pigmented fundi. Hence, the clinical diagnosis of CHM in non-Caucasian patients may be challenging in the first stages of the disease. Here we report a case of a Southeast Asian gentleman who has a family history of X-linked retinal degeneration and was found to have a confirmed in-frame deletion of 12 DNA nucleotides in exon 15 of the RPGR gene. Later in life, however, his fundal appearance showed unusual areas of circular pigment hypertrophy and clumping. He was therefore tested for carrying a disease-causing mutation in the CHM gene and a null mutation was found. Since gene therapy trials are ongoing for both of these conditions, it has now become critically important to establish the correct genetic diagnosis in order to recruit suitable candidates. Moreover, this case demonstrates the necessity to remain vigilant in the interpretation of genetic results which are inconsistent with clinical features.

  4. Bioremediation of soil heavily contaminated with crude oil and its products: composition of the microbial consortium

    Directory of Open Access Journals (Sweden)

    JELENA S. MILIĆ

    2009-04-01

    Full Text Available Bioremediation, a process that utilizes the capability of microorganism to degrade toxic waste, is emerging as a promising technology for the treatment of soil and groundwater contamination. The technology is very effective in dealing with petroleum hydrocarbon contamination. The aim of this study was to examine the composition of the microbial consortium during the ex situ experiment of bioremediation of soil heavily contaminated with crude oil and its products from the Oil Refinery Pančevo, Serbia. After a 5.5-month experiment with biostimulation and bioventilation, the concentration of the total petroleum hydrocarbons (TPH had been reduced from 29.80 to 3.29 g/kg (89 %. In soil, the dominant microorganism population comprised Gram-positive bacteria from actinomycete-Nocardia group. The microorganisms which decompose hydrocarbons were the dominant microbial population at the end of the process, with a share of more than 80 % (range 107 CFU/g. On the basis of the results, it was concluded that a stable microbial community had been formed after initial fluctuations.

  5. Do the VOCs that evaporate from a heavily polluted river threaten the health of riparian residents?

    International Nuclear Information System (INIS)

    Juang, Der-Fong; Lee, Chao-Hsien; Chen, Wei-Chin; Yuan, Chung-Shin

    2010-01-01

    To understand the potential threat of volatile organic compounds (VOCs) to the health of residents living close to a heavily polluted river, this study investigated the species and the concentration of VOCs evaporating from a river and surveyed the health condition of the nearby residents. Air samples were taken seasonally at the upstream, midstream, and downstream water surfaces of the river, and at different locations at certain distances from the river. These samples were analyzed qualitatively and quantitatively through gas chromatography and electron capture detector (GC/ECD) for chlorinated organic compounds, and through gas chromatography and flame ionization detector (GC/FID) for ordinary hydrocarbons. The health data obtained from valid health questionnaires of 908 residents were analyzed through Statistical Package for Social Science (SPSS) software. Twenty-six species of VOCs were identified in the environment adjacent the river, many of which are carcinogenic or believed to be carcinogenic to humans. However, results of this study shows that the VOCs evaporating from the polluted river have not been definitively identified as a major factor of cancer in the residents. However, the risk of suffering from certain chronic diseases may increase in residents living less than 225 m away from the river due to the high levels of evaporated VOCs. Residents living less than 225 m away from the river and with nearby specific industries are 3.130 times more at risk of suffering from chronic diseases than those with no nearby specific industries.

  6. The origin of double peak electric field distribution in heavily irradiated silicon detectors

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

  7. Quantifying the importance of diffuse minewater pollution in a historically heavily coal mined catchment

    International Nuclear Information System (INIS)

    Mayes, W.M.; Gozzard, E.; Potter, H.A.B.; Jarvis, A.P.

    2008-01-01

    There has been considerable progress in developing treatment systems for point sources of minewater pollution in recent years; however, there remains a knowledge gap in the characterisation and remediation of diffuse minewater sources. Data are presented from the River Gaunless catchment, a historically heavily coal mined catchment in the northeast of England. Instream iron (Fe) loadings were monitored alongside loadings arising from point minewater discharges over a 12-month period to assess the dynamic importance of diffuse sources of minewater pollution. In low flow, diffuse sources account for around 50% of instream loading, a proportion which increases to 98% in high flow conditions. The low flow sources appear to be dominated by direct discharge of contaminated groundwater to surface waters in lower reaches of the catchment. In high flow, resuspended Fe-rich sediments, which are both naturally occurring and derived from historic mining, become the dominant diffuse source of Fe in the water column. - Diffuse sources of minewater pollution significantly contribute to instream contaminant loadings under varying flow conditions

  8. Road Environments: Impact of Metals on Human Health in Heavily Congested Cities of Poland.

    Science.gov (United States)

    Adamiec, Ewa

    2017-06-29

    Road dust as a by-product of exhaust and non-exhaust emissions can be a major cause of systemic oxidative stress and multiple disorders. Substantial amounts of road dust are repeatedly resuspended, in particular at traffic lights and junctions where more braking is involved, causing potential threat to pedestrians, especially children. In order to determine the degree of contamination in the heavily traffic-congested cities of Poland, a total of 148 samples of road dust (RD), sludge from storm drains (SL) and roadside soil (RS) were collected. Sixteen metals were analysed using inductively coupled plasma mass spectrometry (ICP-MS), inductively coupled plasma atomic emission spectroscopy (ICP-OES) and atomic absorption spectroscopy (AAS) in all samples. Chemical evaluation followed by Principal Component Analysis (PCA) revealed that road environments have been severely contaminated with traffic-related elements. Concentration of copper in all road-environment samples is even higher, exceeding even up to 15 times its average concentrations established for the surrounding soils. Non-carcinogenic health risk assessment revealed that the hazard index (HI) for children in all road-environment samples exceeds the safe level of 1. Therefore, greater attention should be paid to potential health risks caused by the ingestion of traffic-related particles during outdoor activities.

  9. Comparative study and quantification of cementite decomposition in heavily drawn pearlitic steel wires

    Energy Technology Data Exchange (ETDEWEB)

    Lamontagne, A. [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Massardier, V., E-mail: veronique.massardier@insa-lyon.fr [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Kléber, X. [University of Lyon, INSA Lyon, MATEIS–UMR CNRS 5510, Bât. St Exupéry, 3ème étage, 25 Avenue Jean Capelle, Villeurbanne Cedex 69621 (France); Sauvage, X. [University of Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l’Université, 76801 Saint-Etienne du Rouvray (France); Mari, D. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, Station 3, Lausanne CH-1015 (Switzerland)

    2015-09-17

    Heavily cold-drawing was performed on a pearlitic steel wire and on an ultra-low carbon (ULC) steel wire in order to highlight and quantify the microstructural changes caused by this type of deformation. Both global techniques (thermoelectric power, electrical resistivity, internal fiction background) and local techniques (Atom Probe Tomography) were combined for this study. It was shown that two distinct stages have to be taken into account during the cold-drawing of pearlitic steels. The first stage (below a true strain of 1.5) was attributed mainly to the lamellar alignment, while the second stage (above a true strain of 1.5) was unambiguously interpreted as being due to a gradual enrichment of the carbon content of ferrite arising from the strain induced cementite decomposition. The carbon content in solid solution in ferrite was assessed as a function of the true strain. All the techniques showed that this carbon content exceeds the solubility limit of carbon in the ferrite above a true strain of 2.2. A correlation between the increase in the carbon content of ferrite and the increase in yield strength was also highlighted. Moreover, a scenario was proposed to explain the microstructural changes caused by drawing.

  10. Comparative study and quantification of cementite decomposition in heavily drawn pearlitic steel wires

    International Nuclear Information System (INIS)

    Lamontagne, A.; Massardier, V.; Kléber, X.; Sauvage, X.; Mari, D.

    2015-01-01

    Heavily cold-drawing was performed on a pearlitic steel wire and on an ultra-low carbon (ULC) steel wire in order to highlight and quantify the microstructural changes caused by this type of deformation. Both global techniques (thermoelectric power, electrical resistivity, internal fiction background) and local techniques (Atom Probe Tomography) were combined for this study. It was shown that two distinct stages have to be taken into account during the cold-drawing of pearlitic steels. The first stage (below a true strain of 1.5) was attributed mainly to the lamellar alignment, while the second stage (above a true strain of 1.5) was unambiguously interpreted as being due to a gradual enrichment of the carbon content of ferrite arising from the strain induced cementite decomposition. The carbon content in solid solution in ferrite was assessed as a function of the true strain. All the techniques showed that this carbon content exceeds the solubility limit of carbon in the ferrite above a true strain of 2.2. A correlation between the increase in the carbon content of ferrite and the increase in yield strength was also highlighted. Moreover, a scenario was proposed to explain the microstructural changes caused by drawing

  11. Atmospheric depositions around a heavily industrialized area in a seasonally dry tropical environment of India

    International Nuclear Information System (INIS)

    Singh, Raj Kumar; Agrawal, Madhoolika

    2005-01-01

    Clear and throughfall bulk depositions were collected in the downwind of a highly industrialized region in Sonbhadra district of India to estimate the influence of anthropogenic activities on chemical composition of depositions. Significant spatial and temporal variations in depositions of cations and anions were observed. Depositions were higher near the thermal power stations and coalmines as compared to distantly situated site. Seasonally summer samples showed maximum cation and anion depositions followed by winter and minimum in rainy season. The mean pH of the depositions indicates that rainfall in the area is alkaline. Among the anions, maximum deposition was recorded for SO 4 2- followed by NO 3 - and minimum for Cl - . Among the cations, Ca 2+ deposition was maximum followed by NH 4 + . Na + , K + and Mg 2+ deposition rates showed more or less similar values. The depositions of cations and anions as well as pH were higher in throughfall than clearfall samples. Results of the present study suggest that atmospheric depositions are strongly modified due to thermal power stations and coal mines in the area. - Atmospheric abundance of cations have neutralized the acidity of depositions around a heavily industrialized area in India

  12. Epibenthic diversity and productivity on a heavily trawled Barents Sea bank (Tromsøflaket

    Directory of Open Access Journals (Sweden)

    Monika Kędra

    2017-04-01

    Full Text Available Shallow Arctic banks have been observed to harbour rich communities of epifaunal organisms, but have not been well-studied with respect to composition or function due to sampling challenges. In order to determine how these banks function in the Barents Sea ecosystem, we used a combination of video and trawl/dredge sampling at several locations on a heavily trawled bank, Tromsøflaket – located at the southwestern entrance to the Barents Sea. We describe components of the benthic community, and calculate secondary production of dominant epifaunal organisms. Forty-six epibenthic taxa were identified, and sponges were a significant part of the surveyed benthic communities. There were differences in diversity and production among areas, mainly related to the intensity of trawling activities. Gamma was the most diverse and productive area, with highest species abundance and biomass. Trawled areas had considerably lower species numbers, and significant differences in epifaunal abundance and biomass were found between all trawled and untrawled areas. Trawling seems to have an impact on the sponge communities: mean individual poriferan biomass was higher in untrawled areas, and, although poriferans were observed in areas subjected to more intensive trawling, they were at least five times less frequent than in untrawled areas.

  13. Experiment and simulation on the thermal instability of a heavily deformed Cu-Fe composite

    International Nuclear Information System (INIS)

    Qu Lei; Wang Engang; Zuo Xiaowei; Zhang Lin; He Jicheng

    2011-01-01

    Research highlights: → Fe fibers undergo thermal instability at temperature above 600 deg. C. → Longitudinal boundary splitting is the dominant instability process. → Instability of cylindrical fibers is controlled by breakup, growth and coarsening. → Breakup times can be predicted by Rayleigh perturbation model accurately. → The increase of fiber diameters is due to the coarsening and growth. - Abstract: The thermal instability of the Fe fibers in the heavily deformed Cu-12.8 wt.%Fe composites is investigated experimentally and numerically. The fiber evolution is characterized by a field emission scanning electron microscopy (FESEM). The results show that the dominant instability of the Fe fibers is the longitudinal boundary splitting which is determined by the greater cross sectional aspect ratio (width/thickness, w/t) and the larger ratio of boundary to interfacial energy (γ B /γ S ). The longitudinal boundary splitting makes the ribbon-like Fe fibers evolve into a series of cylindrical fibers. Then the cylindrical Fe fibers undergo the instability process in terms of the breakup, growth and coarsening concurrently. The breakup times are accurately predicted by the Rayleigh perturbation model. The growth process primarily contributes to the higher increasing rate of the fiber radius during isothermal annealing at 700 deg. C than that calculated by the coarsening theory developed for cylindrical fibers, since the Cu-matrix of composites is highly supersaturated after casting/cold-working process.

  14. Alkylphenolic compounds and bisphenol A contamination within a heavily urbanized area: case study of Paris.

    Science.gov (United States)

    Cladière, Mathieu; Gasperi, Johnny; Lorgeoux, Catherine; Bonhomme, Céline; Rocher, Vincent; Tassin, Bruno

    2013-05-01

    This study evaluates the influence of a heavily urbanized area (Paris Metropolitan area), on receiving water contamination by both bisphenol A (BPA) and alkylphenol ethoxylate (APE) biodegradation product. The study began by investigating concentrations within urban sources. In addition to the more commonly studied wastewater treatment plant effluent, wet weather urban sources (including combined sewer overflows, urban runoff, and total atmospheric fallout) were considered. The initial results highlight a significant contamination of all urban sources (from a few nanograms per liter in atmospheric fallout to several micrograms per liter in the other sources) with clearly distinguishable distribution patterns. Secondly, concentration changes along the Seine River from upstream of the Paris Metropolitan area to downstream were investigated. While the concentrations of BPA and nonylphenoxy acetic acid (NP₁EC) increase substantially due to urban sources, the 4-nonylphenol concentrations remain homogeneous along the Seine. These results suggest a broad dissemination of 4-nonylphenol at the scale of the Seine River basin. Moreover, the relationship between pollutant concentrations and Seine River flow was assessed both upstream and downstream of the Paris conurbation. Consequently, a sharp decrease in dissolved NP1EC concentrations relative to Seine River flow underscores the influence of single-point urban pollution on Seine River contamination. Conversely, dissolved 4-nonylphenol concentrations serve to reinforce the hypothesis of its widespread presence at the Seine River basin scale.

  15. NuSTAR observations of heavily obscured quasars at z ∼ 0.5

    Energy Technology Data Exchange (ETDEWEB)

    Lansbury, G. B.; Alexander, D. M.; Moro, A. Del; Gandhi, P.; Aird, J. [Department of Physics, University of Durham, South Road, Durham DH1 3LE (United Kingdom); Assef, R. J. [Núcleo de Astronomía de la Facultad de Ingeniería, Universidad Diego Portales, Av. Ejército Libertador 441, Santiago (Chile); Stern, D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Mail Stop 169-221, Pasadena, CA 91109 (United States); Ballantyne, D. R. [Center for Relativistic Astrophysics, School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Baloković, M.; Grefenstette, B. W.; Harrison, F. A. [Cahill Center for Astrophysics, 1216 East California Boulevard, California Institute of Technology, Pasadena, CA 91125 (United States); Bauer, F. E. [Instituto de Astrofísica, Facultad de Física, Pontificia Universidad Catlica de Chile, Casilla 306, Santiago 22 (Chile); Boggs, S. E. [Space Sciences Laboratory, University of California, Berkeley, CA 94720 (United States); Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, The Pennsylvania State University, University Park, PA 16802 (United States); Christensen, F. E.; Craig, W. W. [DTU Space-National Space Institute, Technical University of Denmark, Elektrovej 327, DK-2800 Lyngby (Denmark); Elvis, M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Hailey, C. J. [Columbia Astrophysics Laboratory, 550 W 120th Street, Columbia University, NY 10027 (United States); Hickox, R. C. [Department of Physics and Astronomy, Dartmouth College, 6127 Wilder Laboratory, Hanover, NH 03755 (United States); Koss, M., E-mail: g.b.lansbury@durham.ac.uk [Institute for Astronomy, Department of Physics, ETH Zurich, Wolfgang-Pauli-Strasse 27, CH-8093 Zurich (Switzerland); and others

    2014-04-10

    We present NuSTAR hard X-ray observations of three Type 2 quasars at z ≈ 0.4-0.5, optically selected from the Sloan Digital Sky Survey. Although the quasars show evidence for being heavily obscured, Compton-thick systems on the basis of the 2-10 keV to [O III] luminosity ratio and multiwavelength diagnostics, their X-ray absorbing column densities (N {sub H}) are poorly known. In this analysis, (1) we study X-ray emission at >10 keV, where X-rays from the central black hole are relatively unabsorbed, in order to better constrain N {sub H}. (2) We further characterize the physical properties of the sources through broad-band near-UV to mid-IR spectral energy distribution analyses. One of the quasars is detected with NuSTAR at >8 keV with a no-source probability of <0.1%, and its X-ray band ratio suggests near Compton-thick absorption with N {sub H} ≳ 5 × 10{sup 23} cm{sup –2}. The other two quasars are undetected, and have low X-ray to mid-IR luminosity ratios in both the low-energy (2-10 keV) and high-energy (10-40 keV) X-ray regimes that are consistent with extreme, Compton-thick absorption (N {sub H} ≳ 10{sup 24} cm{sup –2}). We find that for quasars at z ∼ 0.5, NuSTAR provides a significant improvement compared to lower energy (<10 keV) Chandra and XMM-Newton observations alone, as higher column densities can now be directly constrained.

  16. Oral etoposide in heavily pre-treated metastatic breast cancer: A retrospective series.

    Science.gov (United States)

    Giannone, G; Milani, A; Ghisoni, E; Genta, S; Mittica, G; Montemurro, F; Valabrega, G

    2018-04-01

    Patients with metastatic breast cancer (MBC) can derive clinical benefit from several subsequent lines of chemotherapy. However, in heavily pre-treated patients, agents with clinical activity, a favourable side effects profile and a convenient administration modality are preferred. We retrospectively analyzed 110 patients with previously treated MBC, who received oral etoposide at the dose of 50 mg/day for 20 days in 28 days cycles, between 2003 and 2017. Because this was not a prospectively planned study, to describe the clinical performance of oral etoposide we adopted the approach suggested by Dzimitrowicz and colleagues (J Clin Oncol. 2016; 34:3511-17); Tumour Response (TR) was defined as the proportion of physician-reported clinical or imaging response; Prolonged Duration on Therapy (PDT) as the proportion of non-progressing patients whose treatment lasted more than 6 months. Furthermore, we evaluated median duration on therapy (TD) and median Overall Survival (OS) by the Kaplan Meier method. The median number of previous chemotherapy lines was 5 (range 2-8). TR, PDT, median TD and median OS were 6.4%, 18.2% 4 (range 3.5-4.5) and 10.6 (range 8.4-12.8) months respectively. Interestingly, etoposide activity was unrelated to the number of previous lines and type of metastatic involvement. Oral etoposide was well tolerated with only two patients discontinuing therapy due to toxicity. In this large, single Institution, real practice analysis oral etoposide is a valuable and safe option for pre-treated metastatic breast cancer patients and might be considered in patients failing other approaches, but still suitable for chemotherapy. Copyright © 2018 Elsevier Ltd. All rights reserved.

  17. Risk ranking of environmental contaminants in Xiaoqing River, a heavily polluted river along urbanizing Bohai Rim.

    Science.gov (United States)

    Li, Qifeng; Zhang, Yueqing; Lu, Yonglong; Wang, Pei; Suriyanarayanan, Sarvajayakesavalu; Meng, Jing; Zhou, Yunqiao; Liang, Ruoyu; Khan, Kifayatullah

    2018-08-01

    Xiaoqing River, located in the Laizhou Bay of Bohai Sea, is heavily polluted by various pollutants including heavy metals, polycyclic aromatic hydrocarbons (PAHs), hexachlorocyclohexanes (HCHs), perfluoroalkyl acids (PFAAs), bisphenol A (BPA) and pharmaceutical and personal care products (PPCPs). The aim of this study is to identify the relative risks of such contaminants that currently affect the coastal ecosystem. The median and highest concentrations of PFAAs and perfluorooctanoic acid (PFOA) were 3.23 μg L -1 and 325.28 μg L -1 , and 0.173 μg L -1 and 276.24 μg L -1 , respectively, which were ranked higher when compared with global level concentrations. To assess the relative risk levels of perfluorooctane sulfonic acid (PFOS), PFOA, and other contaminants in the upstream and downstream of the Xiaoqing River and in its tributary, a risk ranking analysis was carried out. Copper (Cu), Zinc (Zn), and arsenic (As) showed the highest risk values in the Xiaoqing River, while the relative risks of PFOA and PFOS differed across the various segments. The risk ranking of PFOA was the second highest in the tributary and the fourth highest in the downstream portion of the river, whereas the PFOS was found to be the lowest in all the segments. Heavy metals and PFOA are the main chemicals that should be controlled in the Xiaoqing River. The results of the present study provide a better understanding of the potential ecological risks of the contaminants in Xiaoqing River. Copyright © 2018 Elsevier Ltd. All rights reserved.

  18. Direct observation of interlayer Josephson vortices in heavily Pb-doped Bi2Sr2CaCu2Oy by scanning superconducting quantum interference device microscopy

    International Nuclear Information System (INIS)

    Kasai, Junpei; Hasegawa, Tetsuya; Okazaki, Noriaki; Koinuma, Hideomi; Nakayama, Yuri; Shimoyama, Jun-ichi; Kishio, Kohji; Motohashi, Teruki; Matsumoto, Yuji

    2006-01-01

    Josephson vortices trapped in cross-sectional edge surfaces of Pb 0.6 Bi 1.4 Sr 2 CaCu 2 O y has been directly observed by using a scanning superconducting quantum interference device (SQUID) microscope. The magnetic field distribution B z around each vortex is substantially anisotropic, compared with the usual vortex in the ab-plane, and is extended over 100 μm toward the in-plane direction. By fitting a theoretical B z function to experimental ones, c-axis penetration depth λ c was estimated to be 11.2 ±0.7 μm, which is in good agreement with the literature value, 12.6 μm, obtained from the Josephson plasma edge frequency. (author)

  19. Compositional trends in low-temperature photoluminescence of heavily Er-doped GeS(2)-Ga(2)S(3) glasses

    Czech Academy of Sciences Publication Activity Database

    Ivanova, Z.; Zavadil, Jiří; Rao, K. S. R. K.

    2011-01-01

    Roč. 357, 11-13 (2011), s. 2443-2446 ISSN 0022-3093 R&D Projects: GA ČR GA104/08/0734 Institutional research plan: CEZ:AV0Z20670512 Keywords : Glasses * Fluorescence * Rare earths Subject RIV: CA - Inorganic Chemistry Impact factor: 1.537, year: 2011

  20. A study of the disorder in heavily doped Ba1-xLaxF2+x by neutron scattering, ionic conductivity and specific heat measurements

    DEFF Research Database (Denmark)

    Andersen, Niels Hessel; Clausen, Kurt Nørgaard; Kjems, Jørgen

    1986-01-01

    The ionic disorder in single crystals of the fluorite-type solid solutions Ba1-xLaxF2+x (with x=0.209 and x=0.492) has been studied in the temperature range from room temperature to 800 degrees C by diffuse neutron scattering, ionic conductivity, and specific heat measurements. From the diffuse...... neutron scattering it was found that the disorder was dominated by 222 clusters, which at low temperatures (T>10-10s), in agreement with NMB results which suggest a jump frequency below 75 MHz. The temperatures at which the steepest slopes are found in the loss of correlations and in the conductivity...... coincide at approximately 650 degrees C. At this temperature no clear anomaly is observed in the specific heat. Based on these findings the authors propose a conduction mechanisms where F- ions are moving through the lattice by means of rearrangements of the 222 clusters....

  1. Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Ponseca jr., C.S.; Němec, Hynek; Wallentin, J.; Anttu, N.; Beech, J.P.; Iqbal, A.; Borgström, M.; Pistol, M.-E.; Samuelson, L.; Yartsev, A.

    2014-01-01

    Roč. 90, č. 8 (2014), "085405-1"-"085405-7" ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101218 Institutional support: RVO:68378271 Keywords : time-resolved terahertz spectrocopy * semiconductor nanostructures * mobility * effective medium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  2. Evaluation of the use of polymer modified bitumen in the production of high modulus asphalt for heavily-trafficked roads

    CSIR Research Space (South Africa)

    Komba, Julius J

    2015-05-01

    Full Text Available Enrobé à Module Élevé (EME) technology, a High Modulus Asphalt (HiMA), has been introduced to South Africa to provide an optimum solution for the design and construction of heavily trafficked roads. Implementation of EME technology in South Africa...

  3. The nature of the torus in the heavily obscured AGN Markarian 3: an X-ray study

    DEFF Research Database (Denmark)

    Guainazzi, M.; Risaliti, G.; Awaki, H.

    2016-01-01

    In this paper, we report the results of an X-ray monitoring campaign on the heavily obscured Seyfert galaxy, Markarian 3, carried out between the fall of 2014 and the spring of 2015 with NuSTAR, Suzaku and XMM–Newton. The hard X-ray spectrum of Markarian 3 is variable on all the time-scales probe...

  4. An accurate measurement of the baryonic Tully-Fisher relation with heavily gas-dominated ALFALFA galaxies

    NARCIS (Netherlands)

    Papastergis, E.; Adams, E. A. K.; van der Hulst, J. M.

    2016-01-01

    We use a sample of 97 galaxies selected from the Arecibo legacy fast ALFA (ALFALFA) 21 cm survey to make an accurate measurement of the baryonic Tully-Fisher relation (BTFR). These galaxies are specifically selected to be heavily gas-dominated (Mgas/M∗ ≳ 2.7) and to be oriented edge-on. The former

  5. Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Petasecca, M; Pignatel, Giogrio Umberto

    2004-01-01

    Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/cm /sup -2/ 1-MeV neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called "three-level model" has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection spectra obtained wit...

  6. BLOOD DOPING AND RISKS

    Directory of Open Access Journals (Sweden)

    Goran Vasić

    2015-05-01

    Full Text Available Doping is the way in which athletes misuse of chemicals and other types of medical interventions (eg, blood replacement, try to get ahead in the results of other athletes or their performance at the expense of their own health. The aim of this work is the analysis of blood doping and the display of negative consequences that this way of increasing capabilities brings. Method: The methodological work is done descriptively. Results: Even in 1972 at the Stockholm Institute for gymnastics and sport, first Dr. Bjorn Ekblom started having blood doping. Taken from the blood, athletes through centifuge separating red blood cells from blood plasma, which is after a month of storage in the fridge, every athlete back into the bloodstream. Tests aerobic capacity thereafter showed that the concerned athletes can run longer on average for 25% of the treadmill than before. Discussion: Blood doping carries with it serious risks, excessive amount of red cells “thickens the blood,” increased hematocrit, which reduces the heart’s ability to pump blood to the periphery. All this makes it difficult for blood to flow through blood vessels, and there is a great danger that comes to a halt in the circulation, which can cause cardiac arrest, stroke, pulmonary edema, and other complications that can be fatal.

  7. Doped barium titanate nanoparticles

    Indian Academy of Sciences (India)

    Wintec

    nese doped BaTiO3 ceramics, sintered at 1400°C in air, changes from tetragonal to hexagonal between 0⋅5 and. 1⋅7 mole% of manganese (Langhammer et al 2000). As a driving force of the transformation from the cubic to the hexagonal crystal structure, the influence of the Jahn–. Teller distortion is proposed. The grain ...

  8. Age standardized cancer mortality ratios in areas heavily exposed to methyl mercury.

    Science.gov (United States)

    Yorifuji, Takashi; Tsuda, Toshihide; Kawakami, Norito

    2007-08-01

    Methyl-mercury (MeHg) was discharged from a chemical factory in Minamata, and consequently spread throughout the Shiranui Sea in Kumamoto, Japan. Although many studies have focused on MeHg-induced neurological disorders, the association between MeHg and malignant neoplasms has not been adequately investigated. Therefore, we explored this association using the age standardized mortality ratio (ASMR) in an ecologic study over a wide area allowing for a long empirical induction period. The subjects were residents in areas around the Shiranui Sea. We divided these areas into exposure groups 1 (Minamata and Ashikita regions) and 2 (Amakusa region). Exposure group 1 was contaminated from the late 1930s, and exposure group 2 was contaminated from the late 1950s. In addition, exposure group 1 was contaminated more heavily than exposure group 2. There were 92,525 and 152,541 residents in each group in 1960, respectively. We analyzed the cancer ASMR in both exposure groups using data from two reference populations (Japan and Kumamoto prefecture) from 1961 to 1997. There were 94,301,494 and 1,856,192 people in each reference group in 1960, respectively. We abstracted population and mortality data from the censuses and the vital statistics of the prefecture and Japan. An increased leukemia ASMR and a decreased gastric cancer ASMR were observed in both exposure groups, while other ASMRs were around unity and less precise. Furthermore, the leukemia ASMRs were elevated differently between the two exposure groups: the leukemia ASMR was already elevated early in the study period in exposure group 1 and increased gradually in exposure group 2. While the negative association between MeHg and gastric cancer might be explained by salt intake, the positive association between MeHg and leukemia could not be explained by potential confounders. Despite some limitations mainly due to its ecologic design, this study indicates the necessity of an individual-level study evaluating the

  9. GEMINI/GeMS Observations Unveil the Structure of the Heavily Obscured Globular Cluster Liller 1.

    Science.gov (United States)

    Saracino, S.; Dalessandro, E.; Ferraro, F. R.; Lanzoni, B.; Geisler, D.; Mauro, F.; Villanova, S.; Moni Bidin, C.; Miocchi, P.; Massari, D.

    2015-06-01

    By exploiting the exceptional high-resolution capabilities of the near-IR camera GSAOI combined with the Gemini Multi-Conjugate Adaptive System at the GEMINI South Telescope, we investigated the structural and physical properties of the heavily obscured globular cluster Liller 1 in the Galactic bulge. We have obtained the deepest and most accurate color-magnitude diagram published so far for this cluster, reaching {{K}s}˜ 19 (below the main-sequence turnoff level). We used these data to redetermine the center of gravity of the system, finding that it is located about 2.″2 southeast from the literature value. We also built new star density and surface brightness profiles for the cluster and rederived its main structural and physical parameters (scale radii, concentration parameter, central mass density, total mass). We find that Liller 1 is significantly less concentrated (concentration parameter c=1.74) and less extended (tidal radius {{r}t}=298\\prime\\prime and core radius {{r}c}=5\\buildrel{\\prime\\prime}\\over{.} 39) than previously thought. By using these newly determined structural parameters, we estimated the mass of Liller 1 to be {{M}tot}=2.3+0.3-0.1× {{10}6} {{M}⊙ } ({{M}tot}=1.5+0.2-0.1× {{10}6} {{M}⊙ } for a Kroupa initial mass function), which is comparable to that of the most massive clusters in the Galaxy (ω Centari and Terzan 5). Also, Liller 1 has the second-highest collision rate (after Terzan 5) among all star clusters in the Galaxy, thus confirming that it is an ideal environment for the formation of collisional objects (such as millisecond pulsars). Based on observations obtained at the Gemini Observatory, which is operated by the Association of Universities for Research in Astronomy, Inc., under a cooperative agreement with the NSF on behalf of the Gemini partnership: the National Science Foundation (United States), the National Research Council (Canada), CONICYT (Chile), the Australian Research Council (Australia), Ministério da

  10. Stereotactic Body Radiation Therapy for Patients with Heavily Pretreated Liver Metastases and Liver Tumors

    Energy Technology Data Exchange (ETDEWEB)

    Lanciano, Rachelle; Lamond, John; Yang, Jun; Feng, Jing; Arrigo, Steve; Good, Michael; Brady, Luther, E-mail: rlancmd@gmail.com [Philadelphia CyberKnife, Drexel University, Havertown, PA (United States)

    2012-03-09

    We present our initial experience with CyberKnife stereotactic body radiation therapy (SBRT) in a heavily pretreated group of patients with liver metastases and primary liver tumors. From October 2007 to June 2009, 48 patients were treated at the Philadelphia CyberKnife Center for liver metastases or primary liver tumors. We report on 30 patients with 41 discrete lesions (1–4 tumors per patient) who received an ablative radiation dose (BED ≥ 79.2 Gy10 = 66 Gy EQD2). The treatment goal was to achieve a high SBRT dose to the liver tumor while sparing at least 700 cc of liver from radiation doses above 15 Gy. Twenty-three patients were treated with SBRT for metastatic cancer to the liver; the remainder (n = 7) were primary liver tumors. Eighty-seven percent of patients had prior systemic chemotherapy with a median 24 months from diagnosis to SBRT; 37% had prior liver directed therapy. Local control was assessed for 28 patients (39 tumors) with 4 months or more follow-up. At a median follow-up of 22 months (range, 10–40 months), 14/39 (36%) tumors had documented local failure. A decrease in local failure was found with higher doses of SBRT (p = 0.0237); 55% of tumors receiving a BED ≤ 100 Gy10 (10/18) had local failure compared with 19% receiving a BED > 100 Gy10 (4/21). The 2-year actuarial rate of local control for tumors treated with BED > 100 Gy10 was 75% compared to 38% for those patients treated with BED ≤ 100 Gy10 (p = 0.04). At last follow-up, 22/30 patients (73%) had distant progression of disease. Overall, seven patients remain alive with a median survival of 20 months from treatment and 57 months from diagnosis. To date, no patient experienced persistent or severe adverse effects. Despite the heavy pretreatment of these patients, SBRT was well tolerated with excellent local control rates when adequate doses (BED > 100 Gy10) were used. Median survival was limited secondary to development of further metastatic disease in the majority of patients.

  11. Historical data reveal 30-year persistence of benthic fauna associations in heavily modified waterbody

    Directory of Open Access Journals (Sweden)

    Ruth Callaway

    2016-08-01

    Full Text Available Baseline surveys form the cornerstone of coastal impact studies where altered conditions, for example through new infrastructure development, are assessed against a temporal reference state. They are snapshots taken before construction. Due to scarcity of relevant data prior to baseline surveys long-term trends can often not be taken into account. Particularly in heavily modified waterbodies this would however be desirable to control for changes in anthropogenic use over time as well as natural ecological variation. Here, the benthic environment of an industrialized embayment was investigated (Swansea Bay, Wales, UK where it is proposed to build a tidal lagoon that would generate marine renewable energy from the tidal range. Since robust long-term baseline data was not available, the value of unpublished historical benthos information from 1984 by a regional water company was assessed with the aim to improve certainty about the persistence of current benthic community patterns. A survey of 101 positions in 2014 identified spatially discrete benthic communities with areas of high and low diversity. Habitat characteristics including sediment properties and the proximity to a sewage outfall explained 17-35% of the variation in the community structure. Comparing the historical information from 1984 with 2014 revealed striking similarity in the benthic communities between those years, not just in their spatial distribution but also to a large extent in the species composition. The 30-year-old information confirmed spatial boundaries of discrete species associations and pinpointed a similar diversity hotspot. A group of five common species was found to be particularly persistent over time (Nucula nitidosa, Spisula elliptica, Spiophanes bombyx, Nephtys hombergii, Diastylis rathkei. According to the Infauna Quality Index (IQI linked to the EU Water Framework Directive (WFD the average ecological status for 2014 was ‘moderate’, but eleven samples

  12. Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

    Science.gov (United States)

    Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

    2018-03-01

    The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

  13. Ego involvement increases doping likelihood.

    Science.gov (United States)

    Ring, Christopher; Kavussanu, Maria

    2018-08-01

    Achievement goal theory provides a framework to help understand how individuals behave in achievement contexts, such as sport. Evidence concerning the role of motivation in the decision to use banned performance enhancing substances (i.e., doping) is equivocal on this issue. The extant literature shows that dispositional goal orientation has been weakly and inconsistently associated with doping intention and use. It is possible that goal involvement, which describes the situational motivational state, is a stronger determinant of doping intention. Accordingly, the current study used an experimental design to examine the effects of goal involvement, manipulated using direct instructions and reflective writing, on doping likelihood in hypothetical situations in college athletes. The ego-involving goal increased doping likelihood compared to no goal and a task-involving goal. The present findings provide the first evidence that ego involvement can sway the decision to use doping to improve athletic performance.

  14. Genetic doping and health damages.

    Science.gov (United States)

    Fallahi, Aa; Ravasi, Aa; Farhud, Dd

    2011-01-01

    Use of genetic doping or gene transfer technology will be the newest and the lethal method of doping in future and have some unpleasant consequences for sports, athletes, and outcomes of competitions. The World Anti-Doping Agency (WADA) defines genetic doping as "the non-therapeutic use of genes, genetic elements, and/or cells that have the capacity to enhance athletic performance ". The purpose of this review is to consider genetic doping, health damages and risks of new genes if delivered in athletes. This review, which is carried out by reviewing relevant publications, is primarily based on the journals available in GOOGLE, ELSEVIER, PUBMED in fields of genetic technology, and health using a combination of keywords (e.g., genetic doping, genes, exercise, performance, athletes) until July 2010. There are several genes related to sport performance and if they are used, they will have health risks and sever damages such as cancer, autoimmunization, and heart attack.

  15. Doped Parton Distributions

    CERN Document Server

    Bertone, Valerio; Rojo, Juan

    2015-01-01

    Calculations of high-energy processes involving the production of b-quarks are typically performed in two different ways, the massive four-flavour scheme (4FS) and the massless five-flavour scheme (5FS). For processes where the combination of the 4FS and 5FS results into a matched calculation is technically difficult, it is possible to define a hybrid scheme known as the doped scheme, where above the b-quark threshold the strong coupling runs with $n_f=5$, as in the massless calculation, while the DGLAP splitting functions are those of the $n_f=4$ scheme. In this contribution we present NNPDF3.0 PDF sets in this doped scheme, compare them with the corresponding 4FS and 5FS sets, and discuss their relevance for LHC phenomenology.

  16. [Doping and urologic tumors].

    Science.gov (United States)

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  17. Doping and Public Health

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    rad av världens främsta idrottsvetare och dopningsexperter hade mött upp för att presentera papers till en intresserad och engagerad publik. Temat för konferensen var "Doping and Public Health", och den aspekten behandlades också; dock tolkade flera presentatörer temat på sina egna vis, och hela...

  18. Neutron transmutation doping

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Jin

    2001-09-01

    HE OVERALL STATE OF THE ART RELATED WITH NEUTRON TRANSMUTATION DOPING(NCT) IS SURVEYED. ITEMS RELATED FOR THE REALIZATION OF NTD IN HANARO IS FOCUSED. IN ADDITION TO THE UNIFORM IRRADIATION AND ACHIEVING THE TARGET RESISTIVITY WHICH ARE THE MOST IMPORTANT TECHNICAL REQUIREMENTS FOR THE NTD, OTHER ITEMS SUCH AS THE FUNCTION AND ROLE OF NTD, MARKET TREND, QUALITY CONTROL ARE INCLUDED. MEANWHILE THE ONLY ADVANTAGE OF NTD IS ACHIEVING VERY HIGH UNIFORMITY OF DOPING, IT HAS SEVERAL DISADVANTAGES DUE TO THE USE OF NUCLEAR REACTOR. THEREFORE THE SEMICONDUCTOR INDUSTRY HAS CONTINUED DEVELOPMENT OF TECHNOLOGY TO REPLACE NTD, AND THE DEMAND OF NTD HAD BEEN DECREASED A LOT DURING 1990S. AS THE DEMAND FOR LARGE CRYSTAL INCREASES, HOWEVER, THE NTD DEMAND BEGAN TO INCREASE AGAIN FROM 2000. SINCE THE DEMAND FOR THE LARGER CRYSTAL WILL BE CONTINUED IN THE FUTURE, THE ROLE OF NTD WOULD BE NEEDED FOR THE LONGER TIME. IN ORDER TO MITIGATE THIS TREND OF DEMAND, THE REACTOR SHOULD BE CAPABLE OF ACCEPTING LARGE CRYSTAL AND THE EFFORT TO IMPROVE DOPING UNIFORMITY AND TO REDUCE THE COST SHOULD CONTINUED.

  19. Predominance of heavily calcified coccolithophores at low CaCO3 saturation during winter in the Bay of Biscay

    OpenAIRE

    Smith, Helen E. K.; Tyrrell, Toby; Charalampopoulou, Anastasia; Dumousseaud, Cynthia; Legge, Oliver J.; Birchenough, Sarah; Pettit, Laura R.; Garley, Rebecca; Hartman, Sue E.; Hartman, Mark C.; Sagoo, Navjit; Daniels, Chris J.; Achterberg, Eric P.; Hydes, David J.

    2012-01-01

    Coccolithophores are an important component of the Earth system, and, as calcifiers, their possible susceptibility to ocean acidification is of major concern. Laboratory studies at enhanced pCO2 levels have produced divergent results without overall consensus. However, it has been predicted from these studies that, although calcification may not be depressed in all species, acidification will produce “a transition in dominance from more to less heavily calcified coccolithophores” [Ridgwell A,...

  20. Stereoselective, nitro-Mannich/lactamisation cascades for the direct synthesis of heavily decorated 5-nitropiperidin-2-ones and related heterocycles

    Directory of Open Access Journals (Sweden)

    Pavol Jakubec

    2012-04-01

    Full Text Available A versatile nitro-Mannich/lactamisation cascade for the direct stereoselective synthesis of heavily decorated 5-nitropiperidin-2-ones and related heterocycles has been developed. A highly enantioenriched substituted 5-nitropiperidin-2-one was synthesised in a four component one-pot reaction combining an enantioselective organocatalytic Michael addition with the diastereoselective nitro-Mannich/lactamisation cascade. Protodenitration and chemoselective reductive manipulation of the heterocycles was used to install contiguous and fully substituted stereocentres in the synthesis of substituted piperidines.

  1. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  2. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  3. Fitness Doping and Body Management

    DEFF Research Database (Denmark)

    Thualagant, Nicole

    This PhD thesis examines in a first paper the conceptualization of fitness doping and its current limitations. Based on a review of studies on bodywork and fitness doping it is emphasised that the definition of doping does not provide insights into bodywork of both men and women. Moreover......, it is argued that the social and a cultural context are missing in the many epidemiological studies on the prevalence of doping. The second paper explores the difficulties of implementing an anti-doping policy, which was originally formulated in an elite sport context, in a fitness context and more......-based fitness centres. Based on a survey in ten Danish club-based fitness centres and on narratives from semi-structured interviews, it is highlighted that the objectives of bodywork differ according to the users’ age and gender. Two different ways of investing in the body are explored in the paper, namely...

  4. Watermelon-like iron nanoparticles: Cr doping effect on magnetism and magnetization interaction reversal

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Maninder; Dai, Qilin; Bowden, Mark E.; Engelhard, Mark H.; Wu, Yaqiao; Tang, Jinke; Qiang, You

    2013-06-26

    Chromium (Cr) forms a solid solution with iron (Fe) lattice when doped in core-shell iron -iron oxide nanocluster (NC) and shows a mixed phase of sigma (σ) FeCr and bcc Fe. The Cr dopant affects heavily the magnetization and magnetic reversal process, and causes the hysteresis loop to shrink near the zero field axis. Dramatic transformation happens from dipolar interaction (0 at. % Cr) to strong exchange interaction (8 at. % of Cr) is confirmed from the Henkel plot and delta M plot, and is explained by a water-melon model of core-shell NC system.

  5. Doped beryllium lanthanate crystals

    International Nuclear Information System (INIS)

    1974-01-01

    Monocrystals of doped beryllium lanthanate, Be 2 Lasub(2-2x)Zsub(2x)O 5 --where Z may be any rare earth, but preferably neodymium, and x may have values between 0.001 and 0.2, but preferably between 0.007 and 0.015-- are recommended as laser hosts. They are softer and may be grown at a lower temperature than Y 3 A1 5 O 12 :Nd (YAG:Nd). Their chemical composition and preparation are described. An example of an optically pumped laser apparatus with this type of monocrystal as laser host is presented

  6. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  7. Role Models on Dope

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest; Gleaves, John

    2014-01-01

    Compared to football-players cyclists are virtuous role models. Yes, Lance Armstrong, Michael Rasmussen and other riders have doped, and because of this they have received the predicate as the most immoral athletes in the sporting world. But if morality is not only a question of whether a person ...... has enhanced his or hers performances by the use of various drugs (and lied about it), but also is about human beings’ relations and interactions, then cycling isn’t as depraved as we like to tell each other. Football is much worse....

  8. Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

    2006-01-01

    Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

  9. The nature of the torus in the heavily obscured AGN Markarian 3: an X-ray study

    OpenAIRE

    Guainazzi, M.; Risaliti, G.; Awaki, H.; Arevalo, P.; Bauer, F. E.; Bianchi, S.; Boggs, S. E.; Brandt, W. N.; Brightman, M.; Christensen, Finn Erland; Craig, W. W.; Forster, K.; Hailey, C. J.; Harrison, F.; Koss, M.

    2016-01-01

    In this paper, we report the results of an X-ray monitoring campaign on the heavily obscured Seyfert galaxy, Markarian 3, carried out between the fall of 2014 and the spring of 2015 with NuSTAR, Suzaku and XMM–Newton. The hard X-ray spectrum of Markarian 3 is variable on all the time-scales probed by our campaign, down to a few days. The observed continuum variability is due to an intrinsically variable primary continuum seen in transmission through a large, but still Compton-thin column dens...

  10. Tunneling spectroscopy of heavily underdoped crystals of Bi2Sr2CaCu2O8+δ

    International Nuclear Information System (INIS)

    Ozyuzer, L.; Zasadzinski, J.F.; Miyakawa, N.; Kendziora, C.; Jian, S.; Hinks, D. G.; Gray, K.E.

    2000-01-01

    Crystals of Bi 2 Sr 2 CaCu 2 O 8+δ with optimal Tc = 95 K have been underdoped using two different methods and the superconducting gaps have been obtained by tunneling. In some cases, three different tunneling geometries have been utilized: point contact, STM and break junctions. The first doping method involves control of the oxygen content by annealing in various partial pressures of oxygen. These crystals exhibit a narrow spread of gap values over a wide doping range from overdoped (Tc = 56 K) to underdoped with Tc = 70 K. However, for underdoped crystals with Tc midpoints in the range 25 K--63 K, there is a dramatic increase in the spread of gap values which may signal the development of static phase separation of either chemical or electronic origin. To avoid possible chemical phase separation, the authors have explored another doping procedure which incorporates Dy substitution on the Ca site. These crystals exhibit a relatively narrow superconducting transition width and some preliminary tunneling spectra will be presented

  11. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  12. Simultaneous rota-stenting and transcatheter aortic valve implantation for patients with heavily calcified coronary stenosis and aortic stenosis

    Directory of Open Access Journals (Sweden)

    Yung-Tsai Lee

    2016-09-01

    Full Text Available Given that coronary artery disease (CAD in octogenarians undergoing transcatheter aortic valve implantation (TAVI often presents with more complex lesions and extensive calcification, rotational atherectomy (RA may be needed in some cases before stenting. However, data regarding the feasibility and safety of simultaneous RA during TAVI using the Medtronic CoreValve (MCV; Medtronic, Minneapolis, MN, USA system are lacking. Three out of 107 (2.8% patients (2 females, average age 85.6 years, mean aortic valve area 0.5 cm2, mean left ventricular ejection fraction 39%, mean Logistic EuroScore 70%, with complex, heavily calcified coronary stenosis, and severe valvular aortic stenosis (AS were treated with TAVI and RA due to high surgical risk. After balloon valvuloplasty, all coronary lesions were successfully treated with RA and stenting, immediately followed by transfemoral TAVI with a self-expandable MCV. Our data suggested that in the very elderly patients with severe and heavily calcified CAD and AS who were turned down for cardiac surgery, RA and stenting followed by TAVI may be performed successfully in a combined, single-stage procedure.

  13. A model for describing the eutrophication in a heavily regulated coastal lagoon. Application to the Albufera of Valencia (Spain).

    Science.gov (United States)

    del Barrio Fernández, Pilar; Gómez, Andrés García; Alba, Javier García; Díaz, César Álvarez; Revilla Cortezón, José Antonio

    2012-12-15

    A simplified two-dimensional eutrophication model was developed to simulate temporal and spatial variations of chlorophyll-a in heavily regulated coastal lagoons. This model considers the hydrodynamics of the whole study area, the regulated connexion of the lagoon with the sea, the variability of the input and output nutrient loads, the flux from the sediments to the water column, the phytoplankton growth and mortality kinetics, and the zooplankton grazing. The model was calibrated and validated by applying it to the Albufera of Valencia, a hypertrophic system whose connection to the sea is strongly regulated by a system of sluice-gates. The calibration and validation results presented a significant agreement between the model and the data obtained in several surveys. The accuracy was evaluated using a quantitative analysis, in which the average uncertainty of the model prediction was less than 6%. The results confirmed an expected phytoplankton bloom in April and October, achieving mean maximum values around 250 μg l(-1) of chlorophyll-a. A mass balance revealed that the eutrophication process is magnified by the input loads of nutrients, mainly from the sediments, as well as by the limited connection of the lagoon with the sea. This study has shown that the developed model is an efficient tool to manage the eutrophication problem in heavily regulated coastal lagoons. Copyright © 2012 Elsevier Ltd. All rights reserved.

  14. TOXICOLOGICAL ENDPOINTS OF DOPING SUBSTANCES

    OpenAIRE

    BASARAN, A. Ahmet

    2018-01-01

    Athletes and non athletes weighlifters have tried to gain an unfairadvantage through the use doping substances since ancient times. Dopingsubstances although enhance sports performance, represent a risk to the healthof individuals and violate the sprit of competition. The use of prohibitedperformance enhancing drugs (PED’s) or methods to improve results incompetitive sports is referred as doping. Among the PED’s used areandrogenic-anabolic steroids (AASs), diuretics and masking agents, narkot...

  15. Gene doping in modern sport.

    OpenAIRE

    MAREK SAWCZUK; AGNIESZKA MACIEJEWSKA; PAWEL CIESZCZYK,

    2009-01-01

    Background: The subject of this paper is gene doping, which should be understood as "he non-therapeutic use of cells, genes, genetic elements, or of the modulation of gene expression, having the capacity to improve athletic performance". The authors of this work, based on the review of literature and previous research, make an attempt at wider characterization of gene doping and the discussion of related potential threats.Methods: This is a comprehensive survey of literature on the latest app...

  16. Gene doping: possibilities and practicalities.

    Science.gov (United States)

    Wells, Dominic J

    2009-01-01

    Our ever-increasing understanding of the genetic control of cardiovascular and musculoskeletal function together with recent technical improvements in genetic manipulation generates mounting concern over the possibility of such technology being abused by athletes in their quest for improved performance. Genetic manipulation in the context of athletic performance is commonly referred to as gene doping. A review of the literature was performed to identify the genes and methodologies most likely to be used for gene doping and the technologies that might be used to identify such doping. A large number of candidate performance-enhancing genes have been identified from animal studies, many of them using transgenic mice. Only a limited number have been shown to be effective following gene transfer into adults. Those that seem most likely to be abused are genes that exert their effects locally and leave little, if any, trace in blood or urine. There is currently no evidence that gene doping has yet been undertaken in competitive athletes but the anti-doping authorities will need to remain vigilant in reviewing this rapidly emerging technology. The detection of gene doping involves some different challenges from other agents and a number of promising approaches are currently being explored. 2009 S. Karger AG, Basel

  17. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    Science.gov (United States)

    Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

    2011-11-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  18. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

    International Nuclear Information System (INIS)

    Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

    2011-01-01

    In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

  19. Implicit versus explicit attitude to doping: Which better predicts athletes' vigilance towards unintentional doping?

    Science.gov (United States)

    Chan, Derwin King Chung; Keatley, David A; Tang, Tracy C W; Dimmock, James A; Hagger, Martin S

    2018-03-01

    This preliminary study examined whether implicit doping attitude, explicit doping attitude, or both, predicted athletes' vigilance towards unintentional doping. A cross-sectional correlational design. Australian athletes (N=143;M age =18.13, SD=4.63) completed measures of implicit doping attitude (brief single-category implicit association test), explicit doping attitude (Performance Enhancement Attitude Scale), avoidance of unintentional doping (Self-Reported Treatment Adherence Scale), and behavioural vigilance task of unintentional doping (reading the ingredients of an unfamiliar food product). Positive implicit doping attitude and explicit doping attitude were negatively related to athletes' likelihood of reading the ingredients table of an unfamiliar food product, and positively related to athletes' vigilance towards unintentional doping. Neither attitude measures predicted avoidance of unintentional doping. Overall, the magnitude of associations by implicit doping attitude appeared to be stronger than that of explicit doping attitude. Athletes with positive implicit and explicit doping attitudes were less likely to read the ingredients table of an unknown food product, but were more likely to be aware of the possible presence of banned substances in a certain food product. Implicit doping attitude appeared to explain athletes' behavioural response to the avoidance of unintentional doping beyond variance explained by explicit doping attitude. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

  20. Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

    CERN Document Server

    Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

    2012-01-01

    We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

  1. Design analysis of doped-silicon surface plasmon resonance immunosensors in mid-infrared range.

    Science.gov (United States)

    DiPippo, William; Lee, Bong Jae; Park, Keunhan

    2010-08-30

    This paper reports the design analysis of a microfabricatable mid-infrared (mid-IR) surface plasmon resonance (SPR) sensor platform. The proposed platform has periodic heavily doped profiles implanted into intrinsic silicon and a thin gold layer deposited on top, making a physically flat grating SPR coupler. A rigorous coupled-wave analysis was conducted to prove the design feasibility, characterize the sensor's performance, and determine geometric parameters of the heavily doped profiles. Finite element analysis (FEA) was also employed to compute the electromagnetic field distributions at the plasmon resonance. Obtained results reveal that the proposed structure can excite the SPR on the normal incidence of mid-IR light, resulting in a large probing depth that will facilitate the study of larger analytes. Furthermore, the whole structure can be microfabricated with well-established batch protocols, providing tunability in the SPR excitation wavelength for specific biosensing needs with a low manufacturing cost. When the SPR sensor is to be used in a Fourier-transform infrared (FTIR) spectroscopy platform, its detection sensitivity and limit of detection are estimated to be 3022 nm/RIU and ~70 pg/mm(2), respectively, at a sample layer thickness of 100 nm. The design analysis performed in the present study will allow the fabrication of a tunable, disposable mid-IR SPR sensor that combines advantages of conventional prism and metallic grating SPR sensors.

  2. Impaired serum inhibin-B and number of germ cells in boys with cryptorchidism following heavily gestational maternal smoking

    DEFF Research Database (Denmark)

    Hildorf, Simone; Clasen-Linde, Erik; Dong, Lihua

    2018-01-01

    heavily (>10 cigarettes/day) during pregnancy with age matched cryptorchid controls of nonsmoking mothers (1:6). We studied: birthweight, germ-cell number/tubular cross section, frequency of germ cells positive for placental-like alkaline phosphatase (PLAP), gonadotropins and inhibin-B. RESULTS: 501 boys...... were sons of nonsmokers, 72 boys of intermittent smokers and 28 boys of heavy smokers. 39%, 44% and 61% respectively had bilateral cryptorchidism. Compared to age-matched cryptorchid controls of nonsmoking mothers, sons of heavy smokers had lower birthweight (p = 0.006), germ-cell number/tubular cross...... could add detailed knowledge to the impact of maternal gestational smoking on pathogenesis of cryptorchidism. METHODS: 601 cryptorchid boys aged 4 months to 14 years old were included. Because normal hormones have a pronounced age dependency, we compared results from boys whose mothers had smoked...

  3. Successful Chemotherapy with Nab-Paclitaxel in a Heavily Treated Non-Small Cell Lung Cancer Patient: A Case Report

    Directory of Open Access Journals (Sweden)

    Mikiko Ishihara

    2014-06-01

    Full Text Available Non-small cell lung cancer (NSCLC accounts for the majority of all lung cancers. A 69-year-old female with postoperatively recurrent NSCLC was treated weekly with nanoparticle-albumin-bound paclitaxel (nab-paclitaxel monotherapy every 4 weeks as a tenth line chemotherapy, and stable disease was achieved by seven cycles of this regimen. The patient developed grade 4 neutropenia and grade 3 leukopenia, but none of the other toxicities, including febrile neutropenia and peripheral neuropathy, were severe, and thus she was able to tolerate this salvage chemotherapy. To our knowledge this is the first report of the efficacy of nab-paclitaxel monotherapy in a heavily treated NSCLC patient.

  4. Preliminary Results From a Heavily Instrumented Engine Ice Crystal Icing Test in a Ground Based Altitude Test Facility

    Science.gov (United States)

    Flegel, Ashlie B.; Oliver, Michael J.

    2016-01-01

    Preliminary results from the heavily instrumented ALF502R-5 engine test conducted in the NASA Glenn Research Center Propulsion Systems Laboratory are discussed. The effects of ice crystal icing on a full scale engine is examined and documented. This same model engine, serial number LF01, was used during the inaugural icing test in the Propulsion Systems Laboratory facility. The uncommanded reduction of thrust (rollback) events experienced by this engine in flight were simulated in the facility. Limited instrumentation was used to detect icing on the LF01 engine. Metal temperatures on the exit guide vanes and outer shroud and the load measurement were the only indicators of ice formation. The current study features a similar engine, serial number LF11, which is instrumented to characterize the cloud entering the engine, detect/characterize ice accretion, and visualize the ice accretion in the region of interest. Data were acquired at key LF01 test points and additional points that explored: icing threshold regions, low altitude, high altitude, spinner heat effects, and the influence of varying the facility and engine parameters. For each condition of interest, data were obtained from some selected variations of ice particle median volumetric diameter, total water content, fan speed, and ambient temperature. For several cases the NASA in-house engine icing risk assessment code was used to find conditions that would lead to a rollback event. This study further helped NASA develop necessary icing diagnostic instrumentation, expand the capabilities of the Propulsion Systems Laboratory, and generate a dataset that will be used to develop and validate in-house icing prediction and risk mitigation computational tools. The ice accretion on the outer shroud region was acquired by internal video cameras. The heavily instrumented engine showed good repeatability of icing responses when compared to the key LF01 test points and during day-to-day operation. Other noticeable

  5. Replacing Heavily Damaged Teeth by Third Molar Autotransplantation With the Use of Cone-Beam Computed Tomography and Rapid Prototyping.

    Science.gov (United States)

    Verweij, Jop P; Anssari Moin, David; Wismeijer, Daniel; van Merkesteyn, J P Richard

    2017-09-01

    This article describes the autotransplantation of third molars to replace heavily damaged premolars and molars. Specifically, this article reports on the use of preoperative cone-beam computed tomographic planning and 3-dimensional (3D) printed replicas of donor teeth to prepare artificial tooth sockets. In the present case, an 18-year-old patient underwent autotransplantation of 3 third molars to replace 1 premolar and 2 molars that were heavily damaged after trauma. Approximately 1 year after the traumatic incident, autotransplantation with the help of 3D planning and rapid prototyping was performed. The right maxillary third molar replaced the right maxillary first premolar. The 2 mandibular wisdom teeth replaced the left mandibular first and second molars. During the surgical procedure, artificial tooth sockets were prepared with the help of 3D printed donor tooth copies to prevent iatrogenic damage to the actual donor teeth. These replicas of the donor teeth were designed based on the preoperative cone-beam computed tomogram and manufactured with the help of 3D printing techniques. The use of a replica of the donor tooth resulted in a predictable and straightforward procedure, with extra-alveolar times shorter than 2 minutes for all transplantations. The transplanted teeth were placed in infraocclusion and fixed with a suture splint. Postoperative follow-up showed physiologic integration of the transplanted teeth and a successful outcome for all transplants. In conclusion, this technique facilitates a straightforward and predictable procedure for autotransplantation of third molars. The use of printed analogues of the donor teeth decreases the risk of iatrogenic damage and the extra-alveolar time of the transplanted tooth is minimized. This facilitates a successful outcome. Copyright © 2017 American Association of Oral and Maxillofacial Surgeons. Published by Elsevier Inc. All rights reserved.

  6. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Sui Yan-Ping; Yu Guang-Hui

    2011-01-01

    We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Crystal growth and doping

    International Nuclear Information System (INIS)

    Paorici, C.

    1980-01-01

    Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

  8. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Hebard, A.F.

    1992-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C 60 , further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I h , its high symmetry alone invites special attention. The publication in September 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C 60 (and the higher fullerenes, such as C 70 and C 84 ) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. 23 refs., 6 figs

  9. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Herbard, A.F.

    1996-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C sup 0, further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I sub h, its high symmetry alone invites special attention. The publication in september 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C sub 6 sub 0 (and the higher fullerenes, such as C sub 7 sub 0 and C sub 8 sub 4) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. (author). 23 refs., 6 figs

  10. Progress on erbium-doped waveguide components

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

    1997-01-01

    The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

  11. Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

    Directory of Open Access Journals (Sweden)

    Lin Li

    2014-01-01

    Full Text Available Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS quantum dot solar cells (QDSCs are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion, open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

  12. Thermal, Dielectric Studies on Pure and Amino Acid L-Glutamic Acid, L-Histidine L-Valine Doped Potassium Dihydrogen Phosphate Single Crystals

    Science.gov (United States)

    Kumaresan, P.; Babu, S. Moorthy; Anbarasan, P. M.

    Amino acids (L-Glutamic acid, L-Histidine, L-Valine) doped potassium dihydrogen phosphate crystals were grown by the solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mole % to 10 mole %. The solubility data for all dopant concentrations were determined. The variation in pH and the corresponding habit modification of the grown crystals were characterized with UV - VIS, FT-IR and SHG trace elements, and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

  13. Doping and thrombosis in sports.

    Science.gov (United States)

    Lippi, Giuseppe; Banfi, Giuseppe

    2011-11-01

    Historically, humans have long sought to enhance their "athletic" performance to increase body weight, aggressiveness, mental concentration and physical strength, contextually reducing fatigue, pain, and improving recovery. Although regular training is the mainstay for achieving these targets, the ancillary use of ergogenic aids has become commonplace in all sports. The demarcation between ergogenic aids and doping substances or practices is continuously challenging and mostly based on perceptions regarding the corruption of the fairness of competition and the potential side effects or adverse events arising from the use of otherwise unnecessary ergogenic substances. A kaleidoscope of side effects has been associated with the use of doping agents, including behavioral, skeletal, endocrinologic, metabolic, hemodynamic, and cardiovascular imbalances. Among the various doping substances, the most striking association with thrombotic complications has been reported for androgenic anabolic steroids (i.e., cardiomyopathy, fatal and nonfatal arrhythmias, myocardial infarction [MI], intracardiac thrombosis, stroke, venous thromboembolism [VTE], limb arterial thrombosis, branch retinal vein occlusion, cerebral venous sinus thrombosis) and blood boosting (i.e., VTE and MI, especially for epoetin and analogs). The potential thrombotic complication arising from misuse of other doping agents such as the administration of cortisol, growth hormone, prolactin, cocaine, and platelet-derived preparations is instead speculative or anecdotal at best. The present article provides an overview on the epidemiological association as well as the underlying biochemical and biological mechanisms linking the practice of doping in sports with the development of thrombosis. © Thieme Medical Publishers.

  14. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  15. [Advances and strategies in gene doping detection].

    Science.gov (United States)

    He, Jiangang; Liu, Zhen; Liu, Jing; Dou, Peng; Chen, Hong-Yuan

    2008-07-01

    This review surveys the recent status of gene doping detection and the strategies for anti-gene doping. The main gene doping candidates for athletes are summarized, and the advances in the detection of the proteins expressed by these genes such as erythropoietin (EPO) and human growth hormone (hGH) are reviewed. The potential detection strategies for further gene doping analysis are also discussed.

  16. Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

    Science.gov (United States)

    Naderi, Ali

    2017-12-01

    In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

  17. Potassium doped MWCNTs for hydrogen storage enhancement

    International Nuclear Information System (INIS)

    Adabi Qomi, S.; Gashtasebi, M.; Khoshnevisan, B.

    2012-01-01

    Here we have used potassium doped MWCNTs for enhancement of hydrogen storage process. XRD and SEM images have confirmed the doping of potassium. For studying the storage process a hydrogenic battery set up has been used. In the battery the working electrode has been made of the silver foam deposited by the doped MWCNTs electrophoretically.

  18. Developing strategies for detection of gene doping.

    Science.gov (United States)

    Baoutina, Anna; Alexander, Ian E; Rasko, John E J; Emslie, Kerry R

    2008-01-01

    It is feared that the use of gene transfer technology to enhance athletic performance, the practice that has received the term 'gene doping', may soon become a real threat to the world of sport. As recognised by the anti-doping community, gene doping, like doping in any form, undermines principles of fair play in sport and most importantly, involves major health risks to athletes who partake in gene doping. One attraction of gene doping for such athletes and their entourage lies in the apparent difficulty of detecting its use. Since the realisation of the threat of gene doping to sport in 2001, the anti-doping community and scientists from different disciplines concerned with potential misuse of gene therapy technologies for performance enhancement have focused extensive efforts on developing robust methods for gene doping detection which could be used by the World Anti-Doping Agency to monitor athletes and would meet the requirements of a legally defensible test. Here we review the approaches and technologies which are being evaluated for the detection of gene doping, as well as for monitoring the efficacy of legitimate gene therapy, in relation to the detection target, the type of sample required for analysis and detection methods. We examine the accumulated knowledge on responses of the body, at both cellular and systemic levels, to gene transfer and evaluate strategies for gene doping detection based on current knowledge of gene technology, immunology, transcriptomics, proteomics, biochemistry and physiology. (c) 2008 John Wiley & Sons, Ltd.

  19. NuSTAR and XMM-Newton observations of luminous, heavily obscured, WISE-selected quasars at z ∼ 2

    Energy Technology Data Exchange (ETDEWEB)

    Stern, D.; Eisenhardt, P. R. M. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Mail Stop 169-221, Pasadena, CA 91109 (United States); Lansbury, G. B.; Alexander, D. M.; Del Moro, A.; Gandhi, P. [Department of Physics, University of Durham, South Road, Durham DH1 3LE (United Kingdom); Assef, R. J. [Núcleo de Astronomía de la Facultad de Ingeniería, Universidad Diego Portales, Av. Ejército Libertador 441, Santiago (Chile); Brandt, W. N.; Griffith, R. L. [Department of Astronomy and Astrophysics, The Pennsylvania State University, 525 Davey Lab, University Park, PA 16802 (United States); Ballantyne, D. R. [Center for Relativistic Astrophysics, School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Baloković, M.; Bridge, C. [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Bauer, F. E. [Instituto de Astrofísica, Facultad de Física, Pontificia Universidad Católica de Chile, 306, Santiago 22 (Chile); Benford, D. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Blain, A. [Physics and Astronomy, University of Leicester, 1 University Road, Leicester, LE1 7RH (United Kingdom); Boggs, S. E.; Craig, W. W. [Space Sciences Laboratory, University of California, Berkeley, 7 Gauss Way, Berkeley, CA 94720-7450 (United States); Brightman, M. [Max-Planck-Institut für extraterrestrische Physik, Giessenbachstrasse 1, D-85748, Garching bei München (Germany); Christensen, F. E. [Danish Technical University, DK-2800 Lyngby (Denmark); Comastri, A., E-mail: daniel.k.stern@jpl.nasa.gov [INAF Osservatorio Astronomico di Bologna, via Ranzani 1, I-40127, Bologna (Italy); and others

    2014-10-20

    We report on a NuSTAR and XMM-Newton program that has observed a sample of three extremely luminous, heavily obscured WISE-selected active galactic nuclei (AGNs) at z ∼ 2 across a broad X-ray band (0.1 – 79 keV). The parent sample, selected to be faint or undetected in the WISE 3.4 μm (W1) and 4.6 μm (W2) bands but bright at 12 μm (W3) and 22 μm (W4), are extremely rare, with only ∼1000 so-called 'W1W2-dropouts' across the extragalactic sky. Optical spectroscopy reveals typical redshifts of z ∼ 2 for this population, implying rest-frame mid-IR luminosities of νL {sub ν}(6 μm) ∼ 6 × 10{sup 46} erg s{sup –1} and bolometric luminosities that can exceed L {sub bol} ∼ 10{sup 14} L {sub ☉}. The corresponding intrinsic, unobscured hard X-ray luminosities are L(2-10 keV) ∼ 4 × 10{sup 45} erg s{sup –1} for typical quasar templates. These are among the most AGNs known, though the optical spectra rarely show evidence of a broad-line region and the selection criteria imply heavy obscuration even at rest-frame 1.5 μm. We designed our X-ray observations to obtain robust detections for gas column densities N {sub H} ≤ 10{sup 24} cm{sup –2}. In fact, the sources prove to be fainter than these predictions. Two of the sources were observed by both NuSTAR and XMM-Newton, with neither being detected by NuSTAR (f {sub 3-24} {sub keV} ≲ 10{sup –13} erg cm{sup –2} s{sup –1}), and one being faintly detected by XMM-Newton (f {sub 0.5-10} {sub keV} ∼ 5 × 10{sup –15} erg cm{sup –2} s{sup –1}). A third source was observed only with XMM-Newton, yielding a faint detection (f {sub 0.5-10} {sub keV} ∼ 7 × 10{sup –15} erg cm{sup –2} s{sup –1}). The X-ray data imply these sources are either X-ray weak, or are heavily obscured by column densities N {sub H} ≳ 10{sup 24} cm{sup –2}. The combined X-ray and mid-IR analysis seems to favor this second possibility, implying the sources are extremely obscured, consistent with Compton

  20. NuSTAR and XMM-Newton observations of luminous, heavily obscured, WISE-selected quasars at z ∼ 2

    International Nuclear Information System (INIS)

    Stern, D.; Eisenhardt, P. R. M.; Lansbury, G. B.; Alexander, D. M.; Del Moro, A.; Gandhi, P.; Assef, R. J.; Brandt, W. N.; Griffith, R. L.; Ballantyne, D. R.; Baloković, M.; Bridge, C.; Bauer, F. E.; Benford, D.; Blain, A.; Boggs, S. E.; Craig, W. W.; Brightman, M.; Christensen, F. E.; Comastri, A.

    2014-01-01

    We report on a NuSTAR and XMM-Newton program that has observed a sample of three extremely luminous, heavily obscured WISE-selected active galactic nuclei (AGNs) at z ∼ 2 across a broad X-ray band (0.1 – 79 keV). The parent sample, selected to be faint or undetected in the WISE 3.4 μm (W1) and 4.6 μm (W2) bands but bright at 12 μm (W3) and 22 μm (W4), are extremely rare, with only ∼1000 so-called 'W1W2-dropouts' across the extragalactic sky. Optical spectroscopy reveals typical redshifts of z ∼ 2 for this population, implying rest-frame mid-IR luminosities of νL ν (6 μm) ∼ 6 × 10 46 erg s –1 and bolometric luminosities that can exceed L bol ∼ 10 14 L ☉ . The corresponding intrinsic, unobscured hard X-ray luminosities are L(2-10 keV) ∼ 4 × 10 45 erg s –1 for typical quasar templates. These are among the most AGNs known, though the optical spectra rarely show evidence of a broad-line region and the selection criteria imply heavy obscuration even at rest-frame 1.5 μm. We designed our X-ray observations to obtain robust detections for gas column densities N H ≤ 10 24 cm –2 . In fact, the sources prove to be fainter than these predictions. Two of the sources were observed by both NuSTAR and XMM-Newton, with neither being detected by NuSTAR (f 3-24 keV ≲ 10 –13 erg cm –2 s –1 ), and one being faintly detected by XMM-Newton (f 0.5-10 keV ∼ 5 × 10 –15 erg cm –2 s –1 ). A third source was observed only with XMM-Newton, yielding a faint detection (f 0.5-10 keV ∼ 7 × 10 –15 erg cm –2 s –1 ). The X-ray data imply these sources are either X-ray weak, or are heavily obscured by column densities N H ≳ 10 24 cm –2 . The combined X-ray and mid-IR analysis seems to favor this second possibility, implying the sources are extremely obscured, consistent with Compton-thick, luminous quasars. The discovery of a significant population of heavily obscured, extremely luminous AGNs would not conform to the standard

  1. Reconstructing historical trends in metal input in heavily-disturbed, contaminated estuaries: studies from Bilbao, Southampton Water and Sicily

    International Nuclear Information System (INIS)

    Cundy, A.B.; Croudace, I.W.; Cearreta, A.; Irabien, M.J.

    2003-01-01

    Estuaries may be important reservoirs for contaminants as they tend to act as sinks for fine, contaminant-reactive sediments, and, historically, they have acted as centres for industrial and urban development. Analysis of dated sediment cores from these areas may allow historical trends in heavy metal input to be reconstructed, and recent and historical inputs of metal contaminants to be compared. Undisturbed saltmarsh settings have been used widely in the reconstruction of historical trends in metal input as saltmarshes provide a stable, vegetated substrate of dominantly fine sediments, and are less prone to erosion and reworking than adjacent mudflat areas. In comparison, much less research on historical pollution trends has been undertaken at estuarine sites which are prone to severe local disturbance, such as intertidal areas which are routinely dredged or where sedimentary processes have been modified by human activities such as shipping, salt working, port activities, land claim etc. This paper assesses the usefulness of 210 Pb and 137 Cs dating, combined with geochemical studies, in reconstructing historical trends in heavy metal input and sediment accretion in 3 heavily-modified, industrialised estuarine areas in Europe: the Bilbao estuary (Spain), Southampton Water (UK), and the Mulinello estuary (Sicily). Of these sites, only a salt marsh core from the Mulinello estuary provides a high-resolution record of recent heavy metal inputs. In Southampton Water only a partial record of changing metal inputs over time is retained due to land-claim and possible early-diagenetic remobilisation, while at Bilbao the vertical distribution of heavy metals in intertidal flats is mainly controlled by input on reworked sediment particles and variations in sediment composition. Where 137 Cs and 210 Pb distributions with depth allow a chronology of sediment deposition to be established, and early-diagenetic remobilisation has been minimal, mudflat and saltmarsh cores from

  2. Copper doped borate dosimeters revisited

    Energy Technology Data Exchange (ETDEWEB)

    Alajerami, Y.S.M. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Department of Medical Radiography, Al-Azhar University, Gaza Strip, Palestine (Country Unknown); Hashim, S., E-mail: suhairul@utm.my [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Oncology Treatment Centre, Sultan Ismail Hospital, 81100 Johor Bahru (Malaysia); Ghoshal, S.K. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Bradley, D.A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mhareb, M. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Saleh, M.A. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); National Atomic Energy Commission (NATEC), Sana' a (Yemen)

    2014-11-15

    We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu{sup +} and Cu{sup ++}) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu{sup +} ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated

  3. Copper doped borate dosimeters revisited

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ghoshal, S.K.; Bradley, D.A.; Mhareb, M.; Saleh, M.A.

    2014-01-01

    We render a panoramic overview on copper (Cu) doped borate dosimeters. Preparing a dosimeter by mixing specific materials with precise weights and methods is a never-ending quest. The recommended composition is highly decisive for accurate estimation of the absorbed dose, prediction of the biological outcome, determination of the treatment dose for radiation therapy and facilitation of personal monitoring. Based on these principles, the proposed dosimeter must cover a series of dosimetric properties to realize the exact results and assessment. The doped borate dosimeters indeed demonstrate attractive thermoluminescence (TL) features. Several dedicated efforts are attempted to improve the luminescence properties by doping various transition metals or rare-earth elements. The Cu ion being one of the preferred activators shows excellent TL properties as revealed via detail comparison with other dosimeters. Two oxide states of Cu (Cu + and Cu ++ ) with reasonable atomic number allow easy interaction with boron network. Interestingly, the intrinsic luminescent centers of borate lattice are in cross linked with that of Cu + ions. Thus, the activation of borate dosimeter with Cu ions for the enhancement of the TL sensitivity is recognized. These dosimeters reveal similar glow curves as the standard TLD-100 (LiF:Mg,Ti) one irrespective of the use of modifiers and synthesis techniques. They display high sensitivity, low fading, dose response linearity over wide range and practical minimum detectable dose. Furthermore, the effective atomic number being the most beneficial aspect (equivalent to that of human tissue) of borate dosimeters do not show any change due to Cu ion activations. The past development, major challenges, excitement, applications, recent progress and the future promises of Cu doped borate TL dosimeters are highlighted. - Highlights: • The manuscript gives a panoramic overview on copper doped borate dosimeters. • Cu ions activated technique in borate

  4. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2012-01-01

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  5. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  6. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  7. Neutron transmutation doping of silicon

    International Nuclear Information System (INIS)

    Mireshghi, A.

    1989-01-01

    After a brief review of the theoretical bases for Neutron Transmutation Doping (NTD) process, the equations necessary for calculation of doped crystal resistivity (p) in terms of parameters of irradiation, such as time and neutron flux, are derived. The procedure for production of NTD-Si is described, important considerations are outlined and the advantages and applications are introduced. Also, an assessment is made of the practicality of using AEOI Research Reactor thermal neutron irradiation facilities for production of NTD-Si, which is concluded to be possible at reactor nominal operation conditions

  8. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  9. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlögl, Udo

    2012-08-23

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  10. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  11. Gene doping: of mice and men.

    Science.gov (United States)

    Azzazy, Hassan M E; Mansour, Mai M H; Christenson, Robert H

    2009-04-01

    Gene doping is the newest threat to the spirit of fair play in sports. Its concept stemmed out from legitimate gene therapy trials, but anti-doping authorities fear that they now may be facing a form of doping that is virtually undetectable and extremely appealing to athletes. This paper presents studies that generated mouse models with outstanding physical performance, by manipulating genes such as insulin-like growth factor 1 (IGF-1) or phosphoenolpyruvate carboxykinase (PEPCK), which are likely to be targeted for gene doping. The potential transition from super mice to super athletes will also be discussed, in addition to possible strategies for detection of gene doping.

  12. Microbial Diversity of a Heavily Polluted Microbial Mat and Its Community Changes following Degradation of Petroleum Compounds

    Science.gov (United States)

    Abed, Raeid M. M.; Safi, Nimer M. D.; Köster, Jürgen; de Beer, Dirk; El-Nahhal, Yasser; Rullkötter, Jürgen; Garcia-Pichel, Ferran

    2002-01-01

    We studied the microbial diversity of benthic cyanobacterial mats inhabiting a heavily polluted site in a coastal stream (Wadi Gaza) and monitored the microbial community response induced by exposure to and degradation of four model petroleum compounds in the laboratory. Phormidium- and Oscillatoria-like cyanobacterial morphotypes were dominant in the field. Bacteria belonging to different groups, mainly the Cytophaga-Flavobacterium-Bacteriodes group, the γ and β subclasses of the class Proteobacteria, and the green nonsulfur bacteria, were also detected. In slurry experiments, these communities efficiently degraded phenanthrene and dibenzothiophene completely in 7 days both in the light and in the dark. n-Octadecane and pristane were degraded to 25 and 34% of their original levels, respectively, within 7 days, but there was no further degradation until 40 days. Both cyanobacterial and bacterial communities exhibited noticeable changes concomitant with degradation of the compounds. The populations enriched by exposure to petroleum compounds included a cyanobacterium affiliated phylogenetically with Halomicronema. Bacteria enriched both in the light and in the dark, but not bacteria enriched in any of the controls, belonged to the newly described Holophaga-Geothrix-Acidobacterium phylum. In addition, another bacterial population, found to be a member of green nonsulfur bacteria, was detected only in the bacteria treated in the light. All or some of the populations may play a significant role in metabolizing the petroleum compounds. We concluded that the microbial mats from Wadi Gaza are rich in microorganisms with high biodegradative potential. PMID:11916684

  13. Evolution of carbon distribution and mechanical properties during the static strain ageing of heavily drawn pearlitic steel wires

    International Nuclear Information System (INIS)

    Lamontagne, A.; Massardier, V.; Sauvage, X.; Kléber, X.; Mari, D.

    2016-01-01

    The static strain ageing of heavily cold-drawn pearlitic steel wires was investigated using both global techniques and local techniques (Atom Probe Tomography (APT)), in order to highlight how the cold-drawn destabilized microstructure returns to a more stable state during post-drawing treatments between 20 °C and 150 °C. The global techniques (thermoelectric power, differential scanning calorimetry) clearly showed that ageing occurs in three successive ageing stages and is due to a redistribution of the carbon atoms coming from the strain-induced cementite dissolution. The first ageing stage was unambiguously attributed to the carbon segregation to the defects, while the second and third stages were interpreted as being due to the precipitation of intermediate carbides (2nd stage) and cementite (3rd stage). The true strain was not found to significantly affect the ageing kinetics and mechanisms but appeared to play a role in the amount of carbon atoms involved in the different ageing stages. APT analyses confirmed that ageing is governed by the carbon depletion of strain-induced supersaturated ferrite. The strengthening mechanisms associated with the different ageing stages were also discussed.

  14. Phytoextraction of nitrogen and phosphorus by crops grown in a heavily manured Dark Brown Chernozem under contrasting soil moisture conditions.

    Science.gov (United States)

    Agomoh, Ikechukwu; Hao, Xiying; Zvomuya, Francis

    2018-01-02

    Phytoextraction of excess nutrients by crops in soils with a long history of manure application may be a viable option for reducing the nutrient levels. This greenhouse study examined the effectiveness of six growth cycles (40 d each) of barley, canola, corn, oat, pea, soybean, and triticale at extracting nitrogen (N) and phosphorus (P) from a Dark Brown Chernozem that had received 180 Mg ha -1 (wet wt.) of beef cattle feedlot manure annually for 38 years. Moisture content during the study was maintained at either 100% or 50% soil field capacity (SFC). Repeated cropping resulted in an overall decrease in dry matter yield (DMY). The decrease in N and P uptake relative to Cycle 1 was fastest for the cereal grains and less pronounced for the two legumes. However, cumulative N uptake values were significantly greater for corn than the other crops under both moisture regimes. The reduction in soil N was greater under the 100% than the 50% SFC. These results indicate that repeated cropping can be a useful management practice for reducing N and P levels in a heavily manured soil. The extent of reduction will be greater for crops with high biomass production under adequate moisture supply.

  15. Two cases of acute leukemia in heavily exposed a-bomb survivors following radiotherapy for breast cancer

    International Nuclear Information System (INIS)

    Mikami, Motoko; Kuramoto, Atsushi; Kamada, Nanao; Ohkita, Takeshi; Sawada, Hisao.

    1980-03-01

    Two cases of acute leukemia in heavily exposed atomic bomb survivors following postoperative 60 Co radiotherapy for breast cancer are presented. Case 1, a female who received an estimated dose of 364 rad from the A-bomb at the age of 22, was diagnosed as having left breast cancer 17 years later. At the age of 48, about 8 years after undergoing postoperative 60 Co radiotherapy, she developed acute monocytic leukemia. Case 2, a female who received an estimated dose of 594 rad from the A-bomb at the age of 37, was diagnosed as having right breast cancer 22 years later. At the age of 63, 4 years after postoperative 60 Co radiotherapy, she was found to have acute erythroleukemia. Both cases had been exposed to the A-bomb in Hiroshima and to therapeutic radiation after developing breast cancer presumably induced by A-bomb exposure. Thus it is proposed that acute leukemia was induced by exposure to large doses of radiation from two sources. (author)

  16. Effects of flexibility and soil-structure interaction on a completely buried structure with a heavily loaded roof system

    International Nuclear Information System (INIS)

    Chen, R.C.; Maryak, M.E.; Mulliken, J.S.

    1993-01-01

    A completely buried structure with a heavily loaded roof system has been analyzed for seismic forces. The seismic input was a site-specific spectrum shape anchored at 0.2g zero period acceleration in the horizontal directions, and the vertical input was prescribed at two thirds of the horizontal input. Models of the structure were developed to account for the flexibility of the base mat, walls, and roof, and were analyzed for the above seismic input with uncertainties in the soil properties considered. The results indicate that horizontal rigid body soil-structure interaction effects are negligible and the seismic amplifications are dominated by the soil-structure system natural frequencies. In addition, the analysis shows that the flexibility of the structure and soil-structure interaction cause considerable amplification of the vertical structural response of the facility's roof system. Finally it was shown that the computer program SASSI can be used to predict the soil-structure interaction responses of a completely buried structure

  17. Increasing costs due to ocean acidification drives phytoplankton to be more heavily calcified: optimal growth strategy of coccolithophores.

    Directory of Open Access Journals (Sweden)

    Takahiro Irie

    Full Text Available Ocean acidification is potentially one of the greatest threats to marine ecosystems and global carbon cycling. Amongst calcifying organisms, coccolithophores have received special attention because their calcite precipitation plays a significant role in alkalinity flux to the deep ocean (i.e., inorganic carbon pump. Currently, empirical effort is devoted to evaluating the plastic responses to acidification, but evolutionary considerations are missing from this approach. We thus constructed an optimality model to evaluate the evolutionary response of coccolithophorid life history, assuming that their exoskeleton (coccolith serves to reduce the instantaneous mortality rates. Our model predicted that natural selection favors constructing more heavily calcified exoskeleton in response to increased acidification-driven costs. This counter-intuitive response occurs because the fitness benefit of choosing a better-defended, slower growth strategy in more acidic conditions, outweighs that of accelerating the cell cycle, as this occurs by producing less calcified exoskeleton. Contrary to the widely held belief, the evolutionarily optimized population can precipitate larger amounts of CaCO(3 during the bloom in more acidified seawater, depending on parameter values. These findings suggest that ocean acidification may enhance the calcification rates of marine organisms as an adaptive response, possibly accompanied by higher carbon fixation ability. Our theory also provides a compelling explanation for the multispecific fossil time-series record from ∼200 years ago to present, in which mean coccolith size has increased along with rising atmospheric CO(2 concentration.

  18. Preliminary studies on factors controlling the rate of regrowth of heavily x-irradiated rat rhabdomyosarcoma tumors

    International Nuclear Information System (INIS)

    Tenforde, T.S.; Curtis, S.B.; Woodruff, H.K.; Parks, D.L.; Daniels, S.J.; Crabtree, K.E.; Schilling, W.A.; DeGuzman, R.J.

    1977-12-01

    Following large single doses of x rays, rat rhabdomyosarcoma tumors exhibit a volume response which characteristically has a swelling phase, a regression phase, a rapid ''initial'' regrowth phase and a slow ''late'' regrowth phase. The preliminary experiments reported here were designed to examine three mechanisms that may underlie the reduction in growth rate occurring in the late regrowth phase; heritable non-lethal cellular damage, host immunity, delayed post-irradiation tissue and vascular damage. Based on retransplantation experiments and studies with immunosuppressed rats, neither heritable non-lethal damage nor host immune factors appear to influence the regrowth rate of tumors receiving radiation doses well below the cure level. After an x-ray dose approaching the cure level, regrowing tumors were observed to have a greatly reduced growth rate, possibly reflecting the presence of heritable non-lethal damage and/or an increased antigenicity of the heavily irradiated tumor cells. Morphometric analysis of histological sections did not reveal statistically significant abnormalities at the cellular level during the late regrowth phase, except for an increase in the percentage of necrotic tissue relative to non-irradiated tumors. The morphological resolution of small blood vessels was not adequate to evaluate delayed vascular damage in regrowing irradiated tumors

  19. Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

    Science.gov (United States)

    Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

    2018-02-19

    The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

  20. DOPING IN SPORT: GLOBAL ETHICAL ISSUES

    Directory of Open Access Journals (Sweden)

    Angela J. Schneider

    2007-09-01

    Full Text Available DESCRIPTION In this book the question of "How ethical is using performance improving drugs in sport?" is argued in global perspective. PURPOSE The ethical questions in sport are discussed comprehensively. Particularly, different cultures and approach of various countries to that issue were examined. FEATURES The book composed of 10 chapters following a thorough introduction from the editors in 194 pages. The titles are: 1.Fair is Fair, Or Is It? : A Moral Consideration of the Doping Wars in American Sport; 2.Are Doping Sanctions Justified? A Moral Relativistic View; 3.Cultural Nuances: Doping, Cycling and the Tour de France; 4.On Transgendered Athletes, Fairness and Doping: An International Challenge; 5.Creating a Corporate Anti-doping Culture: The Role of Bulgarian Sports Governing Bodies; 6. Doping in the UK: Alain and Dwain, Rio and Greg - Not Guilty?; 7.The Japanese Debate Surrounding the Doping Ban: The Application of the Harm Principle; 8. Doping and Anti-doping in Sport in China: An Analysis of Recent and Present Attitudes and Actions; 9.Anti-doping in Sport: The Norwegian Perspective; 10.Ethics in Sport: The Greek Educational Perspective on Anti-doping. AUDIENCE Given that this book is about a popular topic in sport, it is a great interest to the sport public as well as students, researchers and practitioners in the sport and exercise disciplines.

  1. [Doping. High-tech cheating in sport].

    Science.gov (United States)

    Striegel, H; Simon, P

    2007-07-01

    Today, doping is no longer limited to the classical drugs with well known effects and side effects. Older generation anabolic steroids are used mainly in fitness and recreational sports. In contrast, due to doping tests, substances used in competitive sports include peptide hormones, medications not yet approved, and even specially developed drugs, such as designer steroids. Of the peptide hormones, particularly growth hormones (human growth hormone), erythropoietin and generics, insulin, and presumably insulin-like growth factor 1 are used. Substance groups potentially relevant for doping are selective androgen receptor modulators and gene therapy drugs. For most of these, there is no knowledge about side effects in healthy individuals, and no adequate doping tests. Therefore, anti-doping measures cannot rely solely on the continual improvement of doping analyses, but should include increased measures for doping prevention. Not only sports organizations, but also governmental agencies should be involved in developing and implementing these measures.

  2. Steroid profiling in doping analysis

    NARCIS (Netherlands)

    Kerkhof, Daniël Henri van de

    2001-01-01

    Profiling androgens in urine samples is used in doping analysis for the detection of abused steroids of endogenous origin. These profiling techniques were originally developed for the analysis of testosterone, mostly by means of the ratio of testosterone to epitestosterone (T/E ratio). A study was

  3. Hormones as doping in sports.

    Science.gov (United States)

    Duntas, Leonidas H; Popovic, Vera

    2013-04-01

    Though we may still sing today, as did Pindar in his eighth Olympian Victory Ode, "… of no contest greater than Olympia, Mother of Games, gold-wreathed Olympia…", we must sadly admit that today, besides blatant over-commercialization, there is no more ominous threat to the Olympic games than doping. Drug-use methods are steadily becoming more sophisticated and ever harder to detect, increasingly demanding the use of complex analytical procedures of biotechnology and molecular medicine. Special emphasis is thus given to anabolic androgenic steroids, recombinant growth hormone and erythropoietin as well as to gene doping, the newly developed mode of hormones abuse which, for its detection, necessitates high-tech methodology but also multidisciplinary individual measures incorporating educational and psychological methods. In this Olympic year, the present review offers an update on the current technologically advanced endocrine methods of doping while outlining the latest procedures applied-including both the successes and pitfalls of proteomics and metabolomics-to detect doping while contributing to combating this scourge.

  4. GENES IN SPORT AND DOPING

    Directory of Open Access Journals (Sweden)

    Andrzej Pokrywka

    2013-06-01

    Full Text Available Genes control biological processes such as muscle production of energy, mitochondria biogenesis, bone formation erythropoiesis, angiogenesis, vasodilation, neurogenesis, etc. DNA profiling for athletes reveals genetic variations that may be associated with endurance ability, muscle performance and power exercise, tendon susceptibility to injuries and psychological aptitude. Already, over 200 genes relating to physical performance have been identified by several research groups. Athletes’ genotyping is developing as a tool for the formulation of personalized training and nutritional programmes to optimize sport training as well as for the prediction of exercise-related injuries. On the other hand, development of molecular technology and gene therapy creates a risk of non-therapeutic use of cells, genes and genetic elements to improve athletic performance. Therefore, the World Anti-Doping Agency decided to include prohibition of gene doping within their World Anti-Doping Code in 2003. In this review article, we will provide a current overview of genes for use in athletes’ genotyping and gene doping possibilities, including their development and detection techniques.

  5. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  6. Method of doping organic semiconductors

    Science.gov (United States)

    Kloc, Christian Leo [Constance, DE; Ramirez, Arthur Penn [Summit, NJ; So, Woo-Young [New Providence, NJ

    2012-02-28

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  7. doped ZnS nanoparticles

    Indian Academy of Sciences (India)

    Mn2+-doped ZnS nanoparticles were prepared by chemical arrested precipitation method. The samples were heated at 300, 500, 700 and 900°C. The average particle size was determined from the X-ray line broadening. Samples were characterized by XRD, FTIR and UV. The composition was verified by EDAX spectrum.

  8. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  9. Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

    Science.gov (United States)

    Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

    2018-05-01

    Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

  10. Striking the Right Balance : Effectiveness of Anti-Doping Policies

    NARCIS (Netherlands)

    de Hon, O.M.

    2016-01-01

    Doping, and anti-doping, is in the news on a continuous basis. At the core of these stories and discussions is the question how effective anti-doping policies are to curb the use of doping in sports. Anti-doping policies are based on ethical values, a juridical framework, laboratory analyses,

  11. [Current status and prospects of gene doping detection].

    Science.gov (United States)

    Wang, Wenjun; Zhang, Sichun; Xu, Jingjuan; Xia, Xinghua; Tian, Yaping; Zhang, Xinrong; Chen, Hong-Yuan

    2008-07-01

    The fast development of biotechnology promotes the development of doping. From recombinant protein to gene doping, there is a great challenge to their detection. The improvement of gene therapy and potential to enhance athletic performance open the door for gene doping. After a brief introduction of the concept of gene doping, the current status and prospects of gene doping detection are reviewed.

  12. The status of coastal oceanography in heavily impacted Yellow and East China Sea: Past trends, progress, and possible futures

    Science.gov (United States)

    Wang, Xiao Hua; Cho, Yang-Ki; Guo, Xinyu; Wu, Chau-Ron; Zhou, Junliang

    2015-09-01

    Coastal environments are a key location for transport, commercial, residential and defence infrastructure, and have provided conditions suitable for economic growth. They also fulfil important cultural, recreational and aesthetic needs; have intrinsic ecosystem service values; and provide essential biogeochemical functions such as primary productivity, nutrient cycling and water filtration. The rapid expansion in economic development and anticipated growth of the population in the coastal zones along the Yellow and East China Sea basin has placed this region under intense multiple stresses. Here we aim to: 1) synthesize the new knowledge/science in coastal oceanography since 2010 within the context of the scientific literature published in English; 2) report on a citation analysis that assesses whether new research topics have emerged and integrated over time, indicate the location of modelling and field-based studies; and 3) suggest where the new research should develop for heavily impacted estuaries and coastal seas of East Asia. The conclusions of the synthesis include: 1) China has emerged as a dominant force in the region in producing scientific literature in coastal oceanography, although the area of publications has shifted from its traditional fields such as physical oceanography; 2) there has been an increasing number of publications with cross-disciplinary themes between physical oceanography and other fields of the biological, chemical, and geological disciplines, but vigorous and systematic funding mechanisms are still lacking to ensure the viability of large scale multi-disciplinary teams and projects in order to support trans-disciplinary research and newly emerging fields; 3) coastal oceanography is responding to new challenges, with many papers studying the impacts of human activities on marine environment and ecology, but so far very few studying management and conservation strategies or offering policy solutions.

  13. Assessment of heavy metals in sediment in a heavily polluted urban river in the Chaohu Basin, China

    Science.gov (United States)

    Shao, Shiguang; Xue, Lianqing; Liu, Cheng; Shang, Jingge; Wang, Zhaode; He, Xiang; Fan, Chengxin

    2016-05-01

    The Nanfei River (Anhui Province, China) is a severely polluted urban river that flows into Chaohu Lake. In the present study, sediments were collected from the river and analyzed for their heavy metal contents. Multivariate statistics and the fuzzy comprehensive assessment method were used to determine the sources of pollution, the current pollution status, and spatial and temporal variations in heavy metal pollution in sediments. The concentrations of arsenic (As), cadmium (Cd), chromium (Cr), copper (Cu), mercury (Hg), nickel (Ni), lead (Pb), and zinc (Zn) in sediments ranged from 5.67-113, 0.08-40.2, 41.6-524, 15.5-460, 0.03-4.84, 13.5-180, 18.8-250, and 47.9-1 996 mg/kg, and the average concentrations of each metal were 1.7, 38.7, 1.8, 5.5, 18.8, 1.3, 2.5, and 11.1 times greater than the background values, respectively. Multivariate statistical analysis demonstrated that Hg, Cu, Cr, Cd, and Ni may have originated from industrial activities, whereas As and Pb came from agricultural activities. The fuzzy comprehensive assessment method, based on the fuzzy mathematics theory, was used to obtain a detailed assessment of the sediment quality in the Nanfei River watershed. The results indicated that the pollution was moderate in the downstream tributaries of the Nianbu and Dianbu Rivers, but was severe in the main channel of the Nanfei River and in the upstream tributaries of the Sili and Banqiao Rivers. Therefore, sediments in the Nanfei River watershed are heavily polluted and urgent measures should be taken to remedy the status.

  14. The Nature of the Torus in the Heavily Obscured AGN Markarian 3: an X-Ray Study

    Science.gov (United States)

    Guainazzi, M.; Risaliti, G.; Awaki, H.; Arevalo, P.; Bauer, F. E.; Bianchi, S.; Boggs, S.E; Brandt, W. N.; Brightman, M.; Christensen, F. E.; hide

    2016-01-01

    In this paper, we report the results of an X-ray monitoring campaign on the heavily obscured Seyfert galaxy, Markarian 3, carried out between the fall of 2014 and the spring of 2015 with NuSTAR, Suzaku and XMMNewton. The hard X-ray spectrum of Markarian 3 is variable on all the time-scales probed by our campaign, down to a few days. The observed continuum variability is due to an intrinsically variable primary continuum seen in transmission through a large, but still Compton-thin column density (N(sub H) approx. 0.8-1.1 x 10(exp 24)/sq cm). If arranged in a spherical-toroidal geometry, the Compton scattering matter has an opening angle approx. 66deg, and is seen at a grazing angle through its upper rim (inclination angle approx. 70deg). We report a possible occultation event during the 2014 campaign. If the torus is constituted by a system of clouds sharing the same column density, this event allows us to constrain their number (17 +/- 5) and individual column density, [approx. (4.9 +/- 1.5) x 10(exp 22)/ sq cm]. The comparison of IR and X-ray spectroscopic results with state-of-the art torus models suggests that at least two-thirds of the X-ray obscuring gas volume might be located within the dust sublimation radius. We report also the discovery of an ionized absorber, characterized by variable resonant absorption lines due to He- and H-like iron. This discovery lends support to the idea that moderate column density absorbers could be due to clouds evaporated at the outer surface of the torus, possibly accelerated by the radiation pressure due to the central AGN emission leaking through the patchy absorber.

  15. The '333' integrated strategy for effective pollution control and its application to the heavily polluted Jialu River in north China.

    Science.gov (United States)

    Huang, Yu; Sun, Jie; Li, Aimin; Xie, Xianchuan

    2018-05-01

    In this study, an integrated approach named the '333' strategy was applied to pollution control in the Jialu River, in northern China, which is heavily burdened with anthropogenic pollution. Due to a deficiency of the natural ecological inflow, the Jialu River receives predominantly industrial and municipal effluent. The '333' strategy is composed of three steps of pollution control including industrial point-source pollution control, advanced treatment of municipal wastewater, and ecological restoration; three increased stringency emission standards; and three stages of reclamation. Phase 1 of the '333' strategy focuses on industrial point-source pollution control; phase 2 aims to harness municipal wastewater and minimize sewage effluents using novel techniques for advanced water purification; phase 3 of the '333' strategy focuses on the further purification of effluents flowing into Jialu River with the employment of an engineering-based ecological restoration project. The application of the '333' strategy resulted in the development of novel techniques for water purification including modified magnetic resins (NDMP resin), a two-stage internal circulation anaerobic reactor (IC reactor) and an ecological restoration system. The results indicate that water quality in the river was significantly improved, with increased concentrations of dissolved oxygen (DO), as well as reduction of COD by 42.8% and NH 3 -N by 61.4%. In addition, it was observed that the total population of phytoplankton in treated river water notably increased from only one prior to restoration to 8 following restoration. This system also provides a tool for pollution control of other similar industrial and anthropogenic source polluted rivers.

  16. Ethics of using language editing services in an era of digital communication and heavily multi-authored papers.

    Science.gov (United States)

    Lozano, George A

    2014-06-01

    Scientists of many countries in which English is not the primary language routinely use a variety of manuscript preparation, correction or editing services, a practice that is openly endorsed by many journals and scientific institutions. These services vary tremendously in their scope; at one end there is simple proof-reading, and at the other extreme there is in-depth and extensive peer-reviewing, proposal preparation, statistical analyses, re-writing and co-writing. In this paper, the various types of service are reviewed, along with authorship guidelines, and the question is raised of whether the high-end services surpass most guidelines' criteria for authorship. Three other factors are considered. First, the ease of collaboration possible in the internet era allows multiple iterations between the author(s) and the "editing service", so essentially, papers can be co-written. Second, "editing services" often offer subject-specific experts who comment not only on the language, but interpret and improve scientific content. Third, the trend towards heavily multi-authored papers implies that the threshold necessary to earn authorship is declining. The inevitable conclusion is that at some point the contributions by "editing services" should be deemed sufficient to warrant authorship. Trying to enforce any guidelines would likely be futile, but nevertheless, it might be time to revisit the ethics of using some of the high-end "editing services". In an increasingly international job market, awareness of this problem might prove increasingly important in authorship disputes, the allocation of research grants, and hiring decisions.

  17. Community level offset of rain use- and transpiration efficiency for a heavily grazed ecosystem in inner Mongolia grassland.

    Science.gov (United States)

    Gao, Ying Z; Giese, Marcus; Gao, Qiang; Brueck, Holger; Sheng, Lian X; Yang, Hai J

    2013-01-01

    Water use efficiency (WUE) is a key indicator to assess ecosystem adaptation to water stress. Rain use efficiency (RUE) is usually used as a proxy for WUE due to lack of transpiration data. Furthermore, RUE based on aboveground primary productivity (RUEANPP) is used to evaluate whole plant water use because root production data is often missing as well. However, it is controversial as to whether RUE is a reliable parameter to elucidate transpiration efficiency (TE), and whether RUEANPP is a suitable proxy for RUE of the whole plant basis. The experiment was conducted at three differently managed sites in the Inner Mongolia steppe: a site fenced since 1979 (UG79), a winter grazing site (WG) and a heavily grazed site (HG). Site HG had consistent lowest RUEANPP and RUE based on total net primary productivity (RUENPP). RUEANPP is a relatively good proxy at sites UG79 and WG, but less reliable for site HG. Similarly, RUEANPP is good predictor of transpiration efficiency based on aboveground net primary productivity (TEANPP) at sites UG79 and WG but not for site HG. However, if total net primary productivity is considered, RUENPP is good predictor of transpiration efficiency based on total net primary productivity (TENPP) for all sites. Although our measurements indicate decreased plant transpiration and consequentially decreasing RUE under heavy grazing, productivity was relatively compensated for with a higher TE. This offset between RUE and TE was even enhanced under water limited conditions and more evident when belowground net primary productivity (BNNP) was included. These findings suggest that BNPP should be considered when studies fucus on WUE of more intensively used grasslands. The consideration of the whole plant perspective and "real" WUE would partially revise our picture of system performance and therefore might affect the discussion on the C-sequestration and resilience potential of ecosystems.

  18. Clonal variation in survival and growth of hybrid poplar and willow in an in situ trial on soils heavily contaminated with petroleum hydrocarbons

    Science.gov (United States)

    Ronald S., Jr. Zalesny; Edmund O. Bauer; Richard B. Hall; Jill A. Zalesny; Joshua Kunzman; Chris J. Rog; Don E. Riemenschneider

    2005-01-01

    Species and hybrids between species belonging to the genera Populus (poplar) and Salix (willow) have been used successfully for phytoremediation of contaminated soils. Our objectives were to: 1) evaluate the potential for establishing genotypes of poplar and willow on soils heavily contaminated with petroleum hydrocarbons and 2)...

  19. Theoretical study of bismuth-doped cadmium telluride

    Science.gov (United States)

    Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

    Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

  20. The Ethics of Doping and Anti-Doping

    DEFF Research Database (Denmark)

    Møller, Verner

    criticises current anti-doping regimes and challenges our commonly held ideas about the nature of sport and the risks posed by drugs to health and fair play. He argues forcefully that we must understand the precarious position of the athlete and that only by containing coaches, doctors and drug companies....... It is important reading for all serious students and scholars of the ethics, sociology and politics of sport....

  1. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    Science.gov (United States)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  2. Biomarker monitoring in sports doping control.

    Science.gov (United States)

    Pottgiesser, Torben; Schumacher, Yorck Olaf

    2012-06-01

    Biomarker monitoring can be considered a new era in the effort against doping. Opposed to the old concept in doping control of direct detection of a prohibited substance in a biological sample such as urine or blood, the new paradigm allows a personalized longitudinal monitoring of biomarkers that indicate non-physiological responses independently of the used doping technique or substance, and may cause sanctioning of illicit practices. This review presents the development of biomarker monitoring in sports doping control and focuses on the implementation of the Athlete Biological Passport as the current concept of the World Anti Doping Agency for the detection of blood doping (hematological module). The scope of the article extends to the description of novel biomarkers and future concepts of application.

  3. DFT study of Al doped armchair SWCNTs

    Energy Technology Data Exchange (ETDEWEB)

    Dhiman, Shobhna, E-mail: s-dhiman@hotmail.com [Department of Applied Science, PEC, University of Technology, Chandigarh -160012 (India); Rani, Anita [Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab-152026 (India); Kumar, Ranjan; Dharamvir, Keya [Department of Physics, Panjab University, Chandigarh-160014 (India)

    2016-05-23

    Electronic properties of endohedrally doped armchair single-walled carbon nanotubes (SWCNTs) with a chain of six Al atoms have been studied using ab-initio density functional theory. We investigate the binding energy/atom, ionization potential, electron Affinity and Homo-Lumo gap of doped armchair SWNTs from (4,4) to (6,6) with two ends open. BE/dopant atom and ionization potential is maximum for (6, 6) doped armchair carbon nanotube; suggest that it is more stable than (4, 4) and (5, 5) doped tubes. HOMO - LUMO gap of Al doped arm chair carbon nanotubes decreases linearly with the increase in diameter of the tube. This shows that confinement induce a strong effect on electronic properties of doped tubes. These combined systems can be used for future nano electronics. The ab–initio calculations were performed with SIESTA code using generalized gradient approximation (GGA).

  4. Galvanomagnetic properties and electronic structure of iron-doped PbTe

    Energy Technology Data Exchange (ETDEWEB)

    Skipetrov, E. P., E-mail: skip@mig.phys.msu.ru [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Kruleveckaya, O. V.; Skipetrova, L. A. [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Knotko, A. V. [Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Chemistry, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Slynko, E. I.; Slynko, V. E. [Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsy 58001 (Ukraine)

    2015-11-21

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

  5. Thermal, dielectric studies on pure and amino acid ( L-glutamic acid, L-histidine, L-valine) doped KDP single crystals

    Science.gov (United States)

    Kumaresan, P.; Moorthy Babu, S.; Anbarasan, P. M.

    2008-05-01

    Amino acids ( L-glutamic acid, L-histidine, L-valine) doped potassium dihydrogen phospate crystals are grown by solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mol% to 10 mol%. The solubility data for all dopants concentration were determined. There is variation in pH value and hence, there is habit modification of the grown crystals were characterized with UV-VIS, FT-IR studies, SHG trace elements and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. UV-Visible spectra confirm the improvement in the transparency of these crystals on doping metal ions. FT-IR spectra reveal strong absorption band between 1400 and 1600 cm -1 for metal ion doped crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material and it also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

  6. An accurate measurement of the baryonic Tully-Fisher relation with heavily gas-dominated ALFALFA galaxies

    Science.gov (United States)

    Papastergis, E.; Adams, E. A. K.; van der Hulst, J. M.

    2016-09-01

    We use a sample of 97 galaxies selected from the Arecibo legacy fast ALFA (ALFALFA) 21 cm survey to make an accurate measurement of the baryonic Tully-Fisher relation (BTFR). These galaxies are specifically selected to be heavily gas-dominated (Mgas/M∗ ≳ 2.7) and to be oriented edge-on. The former property ensures that the error on the galactic baryonic mass is small, despite the large systematic uncertainty involved in galactic stellar mass estimates. The latter property means that rotational velocities can be derived directly from the width of the 21 cm emission line, without any need for inclination corrections. We measure a slope for the linewidth-based BTFR of α = 3.75 ± 0.11, a value that is somewhat steeper than (but in broad agreement with) previous literature results. The relation is remarkably tight, with almost all galaxies being located within a perpendicular distance of ± 0.1 dex from the best fit line. The low observational error budget for our sample enables us to establish that, despite its tightness, the measured linewidth-based BTFR has some small (I.e., non-zero) intrinsic scatter. We furthermore find a systematic difference in the BTFR of galaxies with "double-horned" 21 cm line profiles - suggestive of flat outer galactic rotation curves - and those with "peaked" profiles - suggestive of rising rotation curves. When we restrict our sample of galaxies to objects in the former category, we measure a slightly steeper slope of α = 4.13 ± 0.15. Overall, the high-accuracy measurement of the BTFR presented in this article is intended as a reliable observational benchmark against which to test theoretical expectations. Here we consider a representative set of semi-analytic models and hydrodynamic simulations in the lambda cold dark matter (ΛCDM) context, as well as modified Newtonian dynamics (MOND). In the near future, interferometric follow-up observations of several sample members will enable us to further refine the BTFR measurement, and

  7. Annual budget of Gd and related Rare Earth Elements in a river basin heavily disturbed by anthropogenic activities.

    Science.gov (United States)

    Hissler, Christophe; Stille, Peter; Guignard, Cédric; François Iffly, Jean; Pfister, Laurent

    2014-05-01

    budget of the REE in the particulate and dissolved fractions of the river water and the waste water treatment plant effluents. Enrichments in Gd have been observed for the dissolved fraction of the water during low water levels. This enrichment has not been detected in the surrounding soils of the basin and can be related to the effluents of the waste water treatment plants, which control the REE chemistry of the dissolved fraction during the low water period. When flood events occur, the Gd anomaly progressively disappears and gives way to the chemical signature of the basin soils. The REE and intense hydrological monitoring we performed at the same time allowed for the annual quantification of the anthropogenic vs. natural REE fluxes in the river water of this heavily polluted basin.

  8. Professionalisierung und Doping im Sport

    OpenAIRE

    Wüterich, Christoph

    2004-01-01

    Der Beitrag untersucht Zusammenhänge zwischen der zunehmenden Professionalisierung des Sports und dem Anstieg von Dopingvergehen. Er zeigt, dass im historischen Vergleich beide Phänomene nicht neu sind, dass sich die Probleme aufgrund der steigenden Bedeutung des Leistungssports aber zugespitzt haben. Ausgehend von einer juristischen und sozioökonomischen Analyse der Anreize zu Doping werden Lösungsvorschläge entwickelt. The author analyzes the interdependencies between a growing commercia...

  9. ŠTA JE DOPING?

    Directory of Open Access Journals (Sweden)

    Nenad Mačvanin

    2011-03-01

    Full Text Available Under doping is now in modern sports involve the use of any foreign substance or physiological substances in large quantities,, and the use of physiological substances different routes input in order to artificially increase the working and sporting abilities. These are substances that increase the activity of the organism and exhibit nervous system and peripheral nervous system. The effects of these substances are very different depending of their influence on the CNS and the smooth and transversal (skeletal muscles.

  10. Blood doping and its detection.

    Science.gov (United States)

    Jelkmann, Wolfgang; Lundby, Carsten

    2011-09-01

    Hemoglobin mass is a key factor for maximal exercise capacity. Some athletes apply prohibited techniques and substances with intent to increase hemoglobin mass and physical performance, and this is often difficult to prove directly. Autologous red blood cell transfusion cannot be traced on reinfusion, and also recombinant erythropoietic proteins are detectable only within a certain timeframe. Novel erythropoietic substances, such as mimetics of erythropoietin (Epo) and activators of the Epo gene, may soon enter the sports scene. In addition, Epo gene transfer maneuvers are imaginable. Effective since December 2009, the World Anti-Doping Agency has therefore implemented "Athlete Biologic Passport Operating Guidelines," which are based on the monitoring of several parameters for mature red blood cells and reticulocytes. Blood doping may be assumed, when these parameters change in a nonphysiologic way. Hematologists should be familiar with blood doping practices as they may play an important role in evaluating blood profiles of athletes with respect to manipulations, as contrasted with the established diagnosis of clinical disorders and genetic variations.

  11. Doping of III-nitride materials

    OpenAIRE

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  12. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. synthesis and optical characterization of acid-doped polyaniline thin

    African Journals Online (AJOL)

    HOD

    SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

  14. Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

    Science.gov (United States)

    Coleman, Christopher; Bhattacharyya, Somnath

    2017-11-01

    The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

  15. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  16. The X-ray to [Ne V]3426 flux ratio: discovering heavily obscured AGN in the distant Universe

    Science.gov (United States)

    Gilli, R.; Vignali, C.; Mignoli, M.; Iwasawa, K.; Comastri, A.; Zamorani, G.

    2010-09-01

    We investigate the possibility of using the ratio between the 2-10 keV flux and the [Ne V]3426 emission line flux (X/NeV) as a diagnostic diagram to discover heavily obscured, possibly Compton-thick active galactic nuclei (AGN) in the distant Universe. While it is on average about one order of magnitude fainter than the more commonly used [O III]5007 emission line, the [Ne V]3426 line can be observed with optical spectroscopy up to z~1.5, whereas the [O III]5007 line is redshifted out of the optical bands already at z~0.8. First, we calibrated a relation between X/NeV and the cold absorbing column density NH using a sample of 74 bright, nearby Seyferts with both X-ray and [Ne V] data available in the literature and for which the column density is determined unambiguously. Similar to what is found for the X-ray to [O III]5007 flux ratio (X/OIII), we found that the X/NeV ratio decreases towards high column densities, as expected if [Ne V]3426 emission is a good tracer of the AGN intrinsic power. Essentially all local Seyferts with X/NeV values below 15 are found to be Compton-thick objects. At X/NeV values below 100, the percentage of Compton-thick nuclei decreases to ~50%, but ~80% of the considered sample is still absorbed with NH > 1023 cm-2. Second, we applied this diagnostic diagram to different samples of distant obscured and unobscured QSOs in the Sloan Digital Sky Survey (SDSS). SDSS blue, unobscured, type-1 QSOs in the redshift range z = [0.1-1.5] indeed show X/NeV values typical of unobscured Seyfert 1s in the local Universe. Conversely, SDSS type-2 QSOs at z~0.5 classified either as Compton-thick or Compton-thin on the basis of their X/OIII ratio, would have mostly been classified in the same way based on the X/NeV ratio. We applied the X/NeV diagnostic diagram to 9 SDSS obscured QSOs in the redshift range z = [0.85-1.31], selected by means of their prominent [Ne V]3426 line (rest EW > 4 Å) and observed with Chandra ACIS-S for 10ks each (8 of them as part

  17. Bevacizumab plus chemotherapy as third- or later-line therapy in patients with heavily treated metastatic colorectal cancer

    Directory of Open Access Journals (Sweden)

    Yang Q

    2015-09-01

    , patients with a primary colon tumor might have had a longer overall survival than patients with a primary rectal tumor (18.8 months vs 11.1 months, respectively; P=0.037. Common chemotherapy-related toxicities were nausea/vomiting (48.6%, fatigue (34.3%, leucopenia (40%, neutropenia (42.9%, and anemia (42.9%, with one patient with grade 3 neutropenia, and two patients with grade 3 thrombocytopenia. The common bevacizumab-associated toxicity was hypertension (31.4%. None of the patients discontinued therapy or died because of bevacizumab-associated toxicities.Conclusion: Our data showed that adding bevacizumab to third- or later-line therapy might lead to tumor control and improved survival in heavily pretreated mCRC patients. In addition, preliminary data suggested that primary colon cancer was more likely to benefit from bevacizumab-containing regimens. Toxicities were acceptable, and no new toxicity was identified. Further studies are needed to validate these findings.Keywords: bevacizumab, chemotherapy, metastatic colorectal cancer

  18. Mechanisms of vegetation removal by floods on bars of a heavily managed gravel bed river (The Isere River, France)

    Science.gov (United States)

    Jourdain, Camille; Belleudy, Philippe; Tal, Michal; Malavoi, Jean-René

    2016-04-01

    In natural alpine gravel bed rivers, floods and their associated bedload transport maintain channels active and free of mature woody vegetation. In managed rivers, where flood regime and sediment supply have been modified by hydroelectric infrastructures and sediment mining, river beds tend to stabilize. As a result, in the recent past, mature vegetation has established on gravel bars of many gravel bed rivers worldwide. This established vegetation increases the risk of flooding by decreasing flow velocity and increasing water levels. In addition, the associated reduction in availability of pioneer habitats characteristic of these environments typically degrades biodiversity. Managing hydrology in a way that would limit vegetation establishment on bars presents an interesting management option. In this context, our study aims at understanding the impacts of floods of varying magnitude on vegetation removal, and identifying and quantifying the underlying mechanisms. Our study site is the Isère River, a heavily managed gravel bed river flowing in the western part of the French Alps. We studied the impact of floods on sediment transport and vegetation survival at the bar scale through field monitoring from 2014 to 2015, focusing on young salicaceous vegetation (chains, and topographic surveys. Hourly water discharge was obtained from the national gauging network. The hydraulics of monitored floods was characterized using a combination of field measurements and 2D hydraulic modeling: water levels were measured with pressure sensors and Large Scale Particle Velocimetry was used to measure flow velocities. These data were used to calibrate 2D hydrodynamic model using TELEMAC2D. At the reach scale, removal of mature vegetation was assed using a series of historical aerial photographs between 2001 and 2015. Our monitoring period covered a series of floods with recurrence intervals of 2 to 4 times per year, as well as one large flood with a 10 year return period. Only the

  19. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  20. Knowledge of pharmacy students about doping, and the need for doping education: a questionnaire survey.

    Science.gov (United States)

    Shibata, Keita; Ichikawa, Koichi; Kurata, Naomi

    2017-08-11

    Anti-doping activities are carried out on a global scale. Based on these activities, the specialty of "sports pharmacist," which entails a deeper comprehension of doping, use of supplements, and appropriate drug use for athletes, was established in 2009 in Japan. It is difficult to say whether the education on doping is adequate for pharmacy students who will be eligible to become sports pharmacists. It is also unclear how well these students understand doping. Therefore, the aim of this study was to investigate pharmacy students' current knowledge of appropriate drug use, doping and use of supplements, and to explore the need for further education on these topics. A questionnaire survey was conducted from July 3rd to August 2nd in 2014 at Showa University in Japan. A total of 406 respondents (2nd- to 6th-year students) were assessed as eligible. Group comparison was used to compare those who had attended a lecture about doping and those who had not. Most of the students only knew the word doping and had not attended a lecture on the subject, but 72% of them expressed a desire to attend one. Over half did not know that the most common doping violation in Japan is unintentional doping, and were unfamiliar with certain past cases of doping. In addition, 41% did not know that over-the-counter medicines and dietary supplements might contain prohibited substances, and 87% were unaware that names of prohibited substances might not appear on the ingredient labels of dietary supplements. In contrast, attending a lecture on doping was effective in facilitating the acquisition of all these types of knowledge. It is important to provide more opportunities for appropriate education of pharmacy students on the topic of doping, given that interest exists and attending a lecture on the topic appears to be useful. More education about doping for pharmacy students would be as effective for anti-doping activities as is education of athletes.

  1. High-resolution heavily T2-weighted magnetic resonance imaging for evaluation of the pituitary stalk in children with ectopic neurohypophysis

    Energy Technology Data Exchange (ETDEWEB)

    Sanharawi, Imane El; Tzarouchi, Loukia [Hopital Robert Debre, APHP, Service de Radiologie Pediatrique, Paris (France); Cardoen, Liesbeth [Hopital Robert Debre, APHP, Service de Radiologie Pediatrique, Paris (France); Universite Paris Diderot, Paris (France); Martinerie, Laetitia; Leger, Juliane; Carel, Jean-Claude [Universite Paris Diderot, Paris (France); Inserm U1141, DHU PROTECT, Paris (France); Hopital Robert Debre, APHP, Service d' Endocrinologie Pediatrique, Paris (France); Elmaleh-Berges, Monique [Hopital Robert Debre, APHP, Service de Radiologie Pediatrique, Paris (France); Inserm U1141, DHU PROTECT, Paris (France); Alison, Marianne [Hopital Robert Debre, APHP, Service de Radiologie Pediatrique, Paris (France); Universite Paris Diderot, Paris (France); Inserm U1141, DHU PROTECT, Paris (France)

    2017-05-15

    In anterior pituitary deficiency, patients with non visible pituitary stalk have more often multiple deficiencies and persistent deficiency than patients with visible pituitary stalk. To compare the diagnostic value of a high-resolution heavily T2-weighted sequence to 1.5-mm-thick unenhanced and contrast-enhanced sagittal T1-weighted sequences to assess the presence of the pituitary stalk in children with ectopic posterior pituitary gland. We retrospectively evaluated the MRI data of 14 children diagnosed with ectopic posterior pituitary gland between 2010 and 2014. We evaluated the presence of a pituitary stalk using a sagittal high-resolution heavily T2-weighted sequence and a 1.5-mm sagittal T1-weighted turbo spin-echo sequence before and after contrast medium administration. A pituitary stalk was present on at least one of the sequences in 10 of the 14 children (71%). T2-weighted sequence depicted the pituitary stalk in all 10 children, whereas the 1.5-mm-thick T1-weighted sequence depicted 2/10 (20%) before contrast injection and 8/10 (80%) after contrast injection (P=0.007). Compared with 1.5-mm-thick contrast-enhanced T1-weighted sequences, high-resolution heavily T2-weighted sequence demonstrates better sensitivity in detecting the pituitary stalk in children with ectopic posterior pituitary gland, suggesting that contrast injection is unnecessary to assess the presence of a pituitary stalk in this setting. (orig.)

  2. High-resolution heavily T2-weighted magnetic resonance imaging for evaluation of the pituitary stalk in children with ectopic neurohypophysis.

    Science.gov (United States)

    El Sanharawi, Imane; Tzarouchi, Loukia; Cardoen, Liesbeth; Martinerie, Laetitia; Leger, Juliane; Carel, Jean-Claude; Elmaleh-Berges, Monique; Alison, Marianne

    2017-05-01

    In anterior pituitary deficiency, patients with non visible pituitary stalk have more often multiple deficiencies and persistent deficiency than patients with visible pituitary stalk. To compare the diagnostic value of a high-resolution heavily T2-weighted sequence to 1.5-mm-thick unenhanced and contrast-enhanced sagittal T1-weighted sequences to assess the presence of the pituitary stalk in children with ectopic posterior pituitary gland. We retrospectively evaluated the MRI data of 14 children diagnosed with ectopic posterior pituitary gland between 2010 and 2014. We evaluated the presence of a pituitary stalk using a sagittal high-resolution heavily T2-weighted sequence and a 1.5-mm sagittal T1-weighted turbo spin-echo sequence before and after contrast medium administration. A pituitary stalk was present on at least one of the sequences in 10 of the 14 children (71%). T2-weighted sequence depicted the pituitary stalk in all 10 children, whereas the 1.5-mm-thick T1-weighted sequence depicted 2/10 (20%) before contrast injection and 8/10 (80%) after contrast injection (P=0.007). Compared with 1.5-mm-thick contrast-enhanced T1-weighted sequences, high-resolution heavily T2-weighted sequence demonstrates better sensitivity in detecting the pituitary stalk in children with ectopic posterior pituitary gland, suggesting that contrast injection is unnecessary to assess the presence of a pituitary stalk in this setting.

  3. Thermoluminescence dosimetry of rare earth doped calcium ...

    Indian Academy of Sciences (India)

    Unknown

    CaAl2O4) doped with different rare earth ions have been studied and their suitability for radiation dosimetry applications is discussed. It is observed that monocalcium aluminate doped with cerium is a good dosimeter having linear response up to ...

  4. Moral entrepreneurship and doping cultures in sport

    NARCIS (Netherlands)

    Stokvis, R.

    2003-01-01

    In this article, the fight against doping has been analyzed as an ongoing process of social definition. It is dependent on the development of power relations within and outside the world of sport. To analyze these dependencies, I identified a variety of important doping cultures in sport and studied

  5. The EVEREST Doping Profile Module. Version 4

    International Nuclear Information System (INIS)

    Ashby, J.; Fowler, R.; Greenough, C.

    1998-01-01

    In this report we describe the EVEREST Doping Module which forms part of the EVEREST suite of programs. The doping module is responsible for generating a neutral file which gives the acceptor and donor densities at each node the device mesh. The neutral file also contains details of the functions used to generate the doping as mesh refinement in the solver requires this. Commands allow the definition of background doping, regions of uniform doping, non-uniform doping relating to windows found in the Geometry neutral file and a user-programmable FORTRAN subroutine which computes doping concentrations as a function of position. The EVEREST suite is one of the products of the ESPRIT project EVEREST (ESPRIT 962E-17, Three-Dimensional Algorithms for a Robust and Efficient Semiconductor Simulator with Parameter Extraction). EVEREST was a four-year project supported by the European Community under the European Strategic Program for Research in Information Technology (ESPRIT) which is investigating suitable algorithms for the analysis of semiconductor devices in three dimensions, and developing software implementing the most effective of those algorithms. The original authors of the Doping Module were G.A. Duffett and M.S. Towers of University College, Swansea. (author)

  6. Heteroatom doped graphene in photocatalysis: A review

    International Nuclear Information System (INIS)

    Putri, Lutfi Kurnianditia; Ong, Wee-Jun; Chang, Wei Sea; Chai, Siang-Piao

    2015-01-01

    Graphical abstract: - Highlights: • Doping graphene with foreign atoms extends its function in the photocatalyst system. • Chemically doped graphene improved the electrical conductivity. • Chemically doped graphene outperform conventional rGO as a semiconductor support. • Chemically doped graphene cause bandgap opening and formation of catalytic sites. • Chemically doped graphene can behave as functional standalone photocatalyst. - Abstract: Photocatalysis has been a focus of great attention due to its useful environmental applications such as eliminating hazardous pollutants and generating sustainable energy. Coincidentally, graphene, a 2D allotrope of carbon, has also infiltrated many research fields due to its outstanding properties – photocatalysis being no exception. As of recent, there has been growing research focus on heteroatom (O, N, B, P and S) doping of graphene and its emergent application opportunities. In this study, rather than the familiar graphene as the electron transfer medium that is normally integrated in a photocatalyst system, we contrarily explore the implication of heteroatom doped graphene and the underlying mechanism behind their advantageous uses in photocatalysis. This review surveys the literature and highlights recent progress and challenges in the development of chemically doped graphene in the photocatalysis scene. It is desired that this review will promote awareness and encourage further investigations for the development in this budding research area.

  7. Proton-transfer doping of polyacetylene

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, L.M.; Schomaker, J.A. (School of Chemistry and Biochemistry, Georgia Inst. of Tech., Atlanta (USA))

    1991-04-30

    Exhaustive deprotonation of films of poly(acetylene-co-1,3-butadiene) (PAB) fails to produce a conductive film. In contrast, deprotonation of segmented polyacetylene (SPA) produces a conductive material with similar characteristics to n-doped polyacetylene. Thus the feasibility of a proton-transfer approach to doping of polyacetylene has been demonstrated. (orig.).

  8. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  9. Doping profile measurements in silicon using terahertz time domain spectroscopy (THz-TDS) via electrochemical anodic oxidation

    Science.gov (United States)

    Tulsyan, Gaurav

    Doping profiles are engineered to manipulate device properties and to determine electrical performances of microelectronic devices frequently. To support engineering studies afterward, essential information is usually required from physically characterized doping profiles. Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Profiling (SRP) and Electrochemical Capacitance Voltage (ECV) profiling are standard techniques for now to map profile. SIMS yields a chemical doping profile via ion sputtering process and owns a better resolution, whereas ECV and SRP produce an electrical doping profile detecting free carriers in microelectronic devices. The major difference between electrical and chemical doping profiles is at heavily doped regions greater than 1020 atoms/cm3. At the profile region over the solubility limit, inactive dopants induce a flat plateau and detected by electrical measurements only. Destructive techniques are usually designed as stand-alone systems to study impurities. For an in-situ process control purpose, non-contact methods, such as ellipsometry and non-contact capacitance voltage (CV) techniques are current under development. In this theses work, terahertz time domain spectroscopy (THz-TDS) is utilized to achieve electrical doping profile in both destructive and non-contact manners. In recent years the Terahertz group at Rochester Institute Technology developed several techniques that use terahertz pulses to non-destructively map doping profiles. In this thesis, we study a destructive but potentially higher resolution version of the terahertz based approach to map the profile of activated dopants and augment the non-destructive approaches already developed. The basic idea of the profile mapping approach developed in this MS thesis is to anodize, and thus oxidize to silicon dioxide, thin layers (down to below 10 nm) of the wafer with the doping profile to be mapped. Since the dopants atoms and any free carriers in the silicon oxide thin

  10. Neutron transmutation doping of polycrystalline silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1976-04-01

    Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

  11. [Doping, sport and addiction--any links?].

    Science.gov (United States)

    Foucart, J; Verbanck, P; Lebrun, P

    2015-01-01

    Sport is widely encouraged as it is beneficial for health. However, high-performance sport is more and more associated to rather suspicious practices; doping is one of the best example. From a physician point of view, the use of doping agents is obviously a major concern because taking such products often induce serious adverse effects on health. The present manuscript aims to inform physicians about the most frequent doping practices. It also points out that intensive sport can generate an "addictive" behavior sharing with "common"addictions a loss of practice control, a lack of interest in other activities and even a sport's practice detrimental to athlete's health. Analysis of the doping issue needs to take this reality into account as some doping products display an established " addictive" effect.

  12. Investigations on vanadium doped glasses

    International Nuclear Information System (INIS)

    Madhusudana Rao, P.

    2013-01-01

    The glass samples studied in the present work have been prepared by melt quenching technique. They were prepared by mixing and grinding together by appropriate amounts of Li 2 O - Na 2 O - B 2 O 3 doped with V 2 O 5 in an agate motor before transferring into crucible. The mixtures were heated in an electric furnace at 1225K for 20 mm. The melt was then quenched to room temperature by pouring it on plane brass plate and pressing it with another brass plate. White and yellow coloured glasses have been obtained with good optical quality and high transparency. Finally the vitreous sample were annealed for 3 hrs at 423K to relieve residual internal stress and slowly cooled to room temperature. The polished glasses have been used for XRD, FTIR analysis and for DSC report. The DSC thermo grams for all the glasses were recorded on in the temperature range 50-550℃ with a heating rate of 10℃/min. Electron spin resonance and optical absorption of 20Li 2 O - 10 Na 2 O - (70-X)B 2 O 3 doped with XV 2 O 5 glass system are studied. ESR spectra of V 4+ ions doped in the glass exhibit peak at g =1.98. Spin Hamiltonian parameters are calculated. It was found that these parameters are dependent upon alkali ion concentration in the glass and the VO +2 ion in an octahedral coordination with a tetragonal compression. The physical parameters of all glasses were also evaluated with respect to the composition

  13. Lanthanide-doped luminescent ionogels

    OpenAIRE

    Lunstroot, Kyra; Driesen, Kris; Nockemann, Peter; Van Hecke, Kristof; Van Meervelt, Luc; Görller-Walrand, Christiane; Binnemans, Koen; Bellayer, Séverine; Viau, Lydie; Le Bideau, Jean; Vioux, André

    2009-01-01

    Ionogels are solid oxide host networks confining at a meso-scale ionic liquids, and retaining their liquid nature. Ionogels were obtained by dissolving anthanide(III) complexes in the ionic liquid 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, [C6mim][Tf2N], followed by confinement of the lanthanide-doped ionic liquid mixtures in the pores of a nano-porous silica network. [C6mim][Ln(tta)4], where tta is 2-thenoyltrifluoroacetonate and Ln = Nd, Sm, Eu, Ho, Er, Yb, and [choli...

  14. Spiral phases of doped antiferromagnets

    International Nuclear Information System (INIS)

    Shraiman, B.I.; Siggia, E.D.

    1990-01-01

    The dipole density field describing the holls in a doped antiferromagnet is considered for law hole density in the semiclassical limit. This yields a phase in which the order parameter is planar and spirals round a fixed direction. The single spiral state breaks the continuous spin rotational symmetry and exhibits long-range order at zero temperature. In it there is a global spin direction as rotation axis. The double spiral state, in which there are two perpendicular directions, is isotropic in both spin and real space. Several results of microscopic calculations, carried out to understand the electronic states, quantum fluctuations, lattice effects and normal mode dynamics, are recapitulated. 8 refs

  15. The importance of cooling of urine samples for doping analysis

    NARCIS (Netherlands)

    Kuenen, J. Gijs; Konings, Wil N.

    Storing and transporting of urine samples for doping analysis, as performed by the anti-doping organizations associated with the World Anti-Doping Agency, does not include a specific protocol for cooled transport from the place of urine sampling to the doping laboratory, although low cost cooling

  16. Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm

    Science.gov (United States)

    Yan, Y. C.; Faber, A. J.; de Waal, H.; Kik, P. G.; Polman, A.

    1997-11-01

    Erbium-doped multicomponent phosphate glass waveguides were deposited by rf sputtering techniques. The Er concentration was 5.3×1020cm-3. By pumping the waveguide at 980 nm with a power of ˜21 mW, a net optical gain of 4.1 dB at 1.535 μm was achieved. This high gain per unit length at low pump power could be achieved because the Er-Er cooperative upconversion interactions in this heavily Er-doped phosphate glass are very weak [the upconversion coefficient is (2.0±0.5)×10-18 cm3/s], presumably due to the homogeneous distribution of Er in the glass and due to the high optical mode confinement in the waveguide which leads to high pump power density at low pump power.

  17. Detonation nanodiamonds for doping Kevlar.

    Science.gov (United States)

    Comet, Marc; Pichot, Vincent; Siegert, Benny; Britz, Fabienne; Spitzer, Denis

    2010-07-01

    This paper reports on the first attempt to enclose diamond nanoparticles--produced by detonation--into a Kevlar matrix. A nanocomposite material (40 wt% diamond) was prepared by precipitation from an acidic solution of Kevlar containing dispersed nanodiamonds. In this material, the diamond nanoparticles (Ø = 4 nm) are entirely wrapped in a Kevlar layer about 1 nm thick. In order to understand the interactions between the nanodiamond surface and the polymer, the oxygenated surface functional groups of nanodiamond were identified and titrated by Boehm's method which revealed the exclusive presence of carboxyl groups (0.85 sites per nm2). The hydrogen interactions between these groups and the amide groups of Kevlar destroy the "rod-like" structure and the classical three-dimensional organization of this polymer. The distortion of Kevlar macromolecules allows the wrapping of nanodiamonds and leads to submicrometric assemblies, giving a cauliflower structure reminding a fractal object. Due to this structure, the macroscopic hardness of Kevlar doped by nanodiamonds (1.03 GPa) is smaller than the one of pure Kevlar (2.31 GPa). To our knowledge, this result is the first illustration of the change of the mechanical properties induced by doping the Kevlar with nanoparticles.

  18. [Soft skills : Somewhat different doping].

    Science.gov (United States)

    Heppner, H J

    2018-02-01

    Doping actually means the taking of illegal substances or the use of forbidden methods to increase or maintain performance. Diseases associated with age and functional decline can lead to constraints in the activities of daily living and this leads to loss of autonomy; therefore, doping in its different variations is used to try to achieve performance, which would not otherwise be possible. A somewhat different method is soft skills, i.e. personal, social and methodological competences, which are adopted to remain fit with the help of selection and compensation. One of the main cornerstones for healthy aging apart from medical interventions is physical activity and to keep training up to old age. An early beginning with sports activities and to continue practicing sport in a variety of forms into old age, plays a decisive role in healthy aging. There are also many recommendations for nutrition, such as changing eating habits and the composition of nourishment to counteract the process of aging. With increasing age the interests and life style also change and therefore early planning is absolutely necessary. Preservation of cognitive capabilities is one of the most important requirements to overcome aging. Not only the cognitive resources must be promoted but also attention must be paid to the resilience to deal with losses. Resilience plays a key role. People with a positive attitude to living with old age show less functional physical impairment and recover from illness more quickly. Humor, optimism and physical activity are crucial for successful aging.

  19. Resonant Raman and FTIR spectra of carbon doped GaN

    Science.gov (United States)

    Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

    2015-03-01

    Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

  20. Microstructure evolution and phase transition in La/Mn doped barium titanate ceramics

    Directory of Open Access Journals (Sweden)

    Vesna Paunović

    2010-12-01

    Full Text Available La/Mn codoped BaTiO3 with different La2O3 content, ranging from 0.1 to 5.0 at% La, was investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all investigated samples. The samples were sintered at 1320°C and 1350°C for two hours. Microstructural studies were done using SEM and EDS analysis. The fine-grained microstructure was obtained even for low content of La. The appearance of secondary abnormal grains with serrated features along grain boundaries was observed in 1.0 at% La-BaTiO3 sintered at 1350°C. Nearly flat permittivity-temperature response was obtained in specimens with 2.0 and 5.0 at% La. Using the modified Curie-Weiss law a critical exponent γ and C’were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 and great departure from the Curie-Weiss law for low doped ceramics.

  1. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    International Nuclear Information System (INIS)

    Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

    2014-01-01

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

  2. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    International Nuclear Information System (INIS)

    Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

    2016-01-01

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

  3. Ultramicroporous carbon with extremely narrow pore distribution and very high nitrogen doping for efficient methane mixture gases upgrading

    KAUST Repository

    Yao, Kexin

    2017-06-24

    It is notably challenging to fabricate heavily heteroatom-doped porous carbonaceous materials with narrow ultramicropore size distributions for highly effective mixed-gas separation. In this study, new carbon-based materials with narrow ultramicropore size (<7 Å) distributions (>95%) and high N doping contents (>10 at%) are fabricated through the pyrolysis of a perchloro-substituted porous covalent triazine-based framework (ClCTF). In particular, the sample prepared at 650 °C (ClCTF-1-650) possesses the highest ultramicropores content (98%) and large N content (12 at%) and demonstrates a very high CH and CO capacity, as well as a low N uptake under ambient conditions. The extraordinarily high CH/N and CO/N selectivities correlate with both the ideal adsorption solution theory (IAST) method and performed dynamic separation experiments (breakthrough experiments). The results reported in this study far exceed the CH/N and CO/N selectivities of previously reported carbon-based adsorbents including various nitrogen-doped ones. These results are believed to be associated with the unusually high N content, as well as the suitably narrow ultramicropore size distribution. This report introduces a new pathway to design porous absorbents with precisely controlled ultramicropores for gas separation.

  4. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

    Science.gov (United States)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

    2016-01-08

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  5. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Science.gov (United States)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  6. IR-doped ruthenium oxide catalyst for oxygen evolution

    Science.gov (United States)

    Valdez, Thomas I. (Inventor); Narayanan, Sekharipuram R. (Inventor)

    2012-01-01

    A method for preparing a metal-doped ruthenium oxide material by heating a mixture of a doping metal and a source of ruthenium under an inert atmosphere. In some embodiments, the doping metal is in the form of iridium black or lead powder, and the source of ruthenium is a powdered ruthenium oxide. An iridium-doped or lead-doped ruthenium oxide material can perform as an oxygen evolution catalyst and can be fabricated into electrodes for electrolysis cells.

  7. Elastic, vibration and thermodynamic properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) chalcopyrite compounds via first principles

    Science.gov (United States)

    Zhong, Yuhan; Wang, Peida; Mei, Huayue; Jia, Zhenyuan; Cheng, Nanpu

    2018-06-01

    CuInTe2 chalcopyrite compound is widely used in the fields of optoelectronics and pyroelectricity, and doping atoms can further improve the physical properties of the CuInTe2 compound. For all we know, this is the first time that the elastic behaviors and lattice dynamical properties of Ag-doped CuInTe2 compounds with the tetragonal system are determined theoretically. The elastic, lattice dynamical and thermal properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) compounds have been investigated by using density functional theory. The obtained elastic constants of Cu1‑x Ag x InTe2 compounds indicate that these compounds are mechanically stable and elastic anisotropic. The anisotropy of the {001} plane is more obvious than those of the {100} and {010} planes. Additionally, with increasing Ag doping concentrations, the bulk and shear moduli of Cu1‑x Ag x InTe2 compounds decrease and their toughness improves. The phonon spectra and density of states reveal that Cu (or Ag) atoms in Cu1‑x Ag x InTe2 compounds form chemical bonds with Te atoms, and Cu-Te bonds are gradually replaced by Ag-Te bonds with increasing Ag doping concentration. Vibration modes of Cu1‑x Ag x InTe2 compounds at the {{Γ }} point in the Brillouin zone show that each Cu1‑x Ag x InTe2 (x = 0 and 1) crystal includes five irreducible representations (A1, A2, B1, B2 and E). As for Cu1‑x Ag x InTe2 (x = 0.25, 0.5 and 0.75) compounds, each crystal has three irreducible representations (A, B and E). The atomic displacements of several typical phonon modes in CuInTe2 crystals have been analyzed to deepen the understanding of lattice vibrations in Cu1‑x AgxInTe2 compounds. With increasing Ag doping concentration, the Debye temperatures of Cu1‑x Ag x InTe2 compounds decrease, while their heat capacities increase.

  8. Alternative medicine and doping in sports

    Directory of Open Access Journals (Sweden)

    Benjamin Koh

    2012-01-01

    Full Text Available Athletes are high achievers who may seek creative or unconventional methods to improve performance. The literature indicates that athletes are among the heaviest users of complementary and alternative medicine (CAM and thus may pioneer population trends in CAM use. Unlike non-athletes, athletes may use CAM not just for prevention, treatment or rehabilitation from illness or injuries, but also for performance enhancement. Assuming that athletes’ creative use of anything unconventional is aimed at “legally” improving performance, CAM may be used because it is perceived as more “natural” and erroneously assumed as not potentially doping. This failure to recognise CAMs as pharmacological agents puts athletes at risk of inadvertent doping.The general position of the World Anti-Doping Authority (WADA is one of strict liability, an application of the legal proposition that ignorance is no excuse and the ultimate responsibility is on the athlete to ensure at all times whatever is swallowed, injected or applied to the athlete is both safe and legal for use. This means that a violation occurs whether or not the athlete intentionally or unintentionally, knowingly or unknowingly, used a prohibited substance/method or was negligent or otherwise at fault. Athletes are therefore expected to understand not only what is prohibited, but also what might potentially cause an inadvertent doping violation. Yet, as will be discussed, athlete knowledge on doping is deficient and WADA itself sometimes changes its position on prohibited methods or substances. The situation is further confounded by the conflicting stance of anti-doping experts in the media. These highly publicised disagreements may further portray inconsistencies in anti-doping guidelines and suggest to athletes that what is considered doping is dependent on the dominant political zeitgeist. Taken together, athletes may believe that unless a specific and explicit ruling is made, guidelines are

  9. Alternative medicine and doping in sports.

    Science.gov (United States)

    Koh, Benjamin; Freeman, Lynne; Zaslawski, Christopher

    2012-01-01

    Athletes are high achievers who may seek creative or unconventional methods to improve performance. The literature indicates that athletes are among the heaviest users of complementary and alternative medicine (CAM) and thus may pioneer population trends in CAM use. Unlike non-athletes, athletes may use CAM not just for prevention, treatment or rehabilitation from illness or injuries, but also for performance enhancement. Assuming that athletes' creative use of anything unconventional is aimed at "legally" improving performance, CAM may be used because it is perceived as more "natural" and erroneously assumed as not potentially doping. This failure to recognise CAMs as pharmacological agents puts athletes at risk of inadvertent doping.The general position of the World Anti-Doping Authority (WADA) is one of strict liability, an application of the legal proposition that ignorance is no excuse and the ultimate responsibility is on the athlete to ensure at all times whatever is swallowed, injected or applied to the athlete is both safe and legal for use. This means that a violation occurs whether or not the athlete intentionally or unintentionally, knowingly or unknowingly, used a prohibited substance/method or was negligent or otherwise at fault. Athletes are therefore expected to understand not only what is prohibited, but also what might potentially cause an inadvertent doping violation. Yet, as will be discussed, athlete knowledge on doping is deficient and WADA itself sometimes changes its position on prohibited methods or substances. The situation is further confounded by the conflicting stance of anti-doping experts in the media. These highly publicised disagreements may further portray inconsistencies in anti-doping guidelines and suggest to athletes that what is considered doping is dependent on the dominant political zeitgeist. Taken together, athletes may believe that unless a specific and explicit ruling is made, guidelines are open to interpretation

  10. Gene doping: the hype and the harm.

    Science.gov (United States)

    McKanna, Trudy A; Toriello, Helga V

    2010-06-01

    "Gene doping" is the term used to describe the potential abuse of gene therapy as a performance-enhancing agent. Gene doping would apply the techniques used in gene therapy to provide altered expression of genes that would promote physical superiority. For example, insulin-like growth factor 1 (IGF-1) is a primary target for growth hormone; overexpression of IGF-1 can lead to increased muscle mass and power. Although gene doping is still largely theoretical, its implications for sports, health, ethics, and medical genetics are significant.

  11. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  12. Plasmonic energy transfer in periodically doped graphene

    International Nuclear Information System (INIS)

    Silveiro, I; Manjavacas, A; Thongrattanasiri, S; García de Abajo, F J

    2013-01-01

    We predict unprecedentedly large values of the energy-transfer rate between an optical emitter and a layer of periodically doped graphene. The transfer exhibits divergences at photon frequencies corresponding to the Van Hove singularities of the plasmonic band structure of the graphene. In particular, we find flat bands associated with regions of vanishing doping charge, which appear in graphene when it is patterned through gates of spatially alternating signs, giving rise to intense transfer rate singularities. Graphene is thus shown to provide a unique platform for fast control of optical energy transfer via fast electrostatic inhomogeneous doping. (paper)

  13. Sm 3+-doped polymer optical waveguide amplifiers

    Science.gov (United States)

    Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

    2010-04-01

    Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

  14. Influence of rare-earth additives (La, Sm and Dy on the microstructure and dielectric properties of doped BaTiO3 ceramics

    Directory of Open Access Journals (Sweden)

    Paunović Vesna

    2010-01-01

    Full Text Available A series of La/Mn, Sm/Mn and Dy/Mn codoped BaTiO3 samples were prepared by the conventional solid state procedure with dopant concentrations ranging from 0.1 up to 2.0 at%. The specimens were sintered at 1320°C and 1350°C in an air atmosphere for two hours. The low doped samples demonstrated a mainly uniform and homogeneous microstructure with average grain sizes ranging from 0.3 μm to 5.0 μm. The appearance of secondary abnormal grains in the fine grain matrix and core-shell structure were observed in highly doped La/BaTiO3 and Dy/BaTiO3 sintered at 1350°C. The low doped samples, sintered at 1350°C, display a high value of dielectric permittivity at room temperature, 6800 for Sm/BaTiO3, 5900 for Dy/BaTiO3 and 3100 for La/BaTiO3. A nearly flat permittivity-response was obtained in specimens with 2.0 at% additive content. Using a modified Curie-Weiss law the Curie-like constant C⁄ and a critical exponent γ were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 samples.

  15. High Capacity of Hard Carbon Anode in Na-Ion Batteries Unlocked by PO x Doping

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhifei; Ma, Lu; Surta, Todd Wesley; Bommier, Clement; Jian, Zelang; Xing, Zhenyu; Stickle, William F.; Dolgos, Michelle; Amine, Khalil; Lu, Jun; Wu, Tianpin; Ji, Xiulei

    2016-08-12

    The capacity of hard carbon anodes in Na-ion batteries 2.5 rarely reaches values beyond 300 mAh/g. We report that doping POx into local structures of hard carbon increases its reversible capacity from 283 to 359 mAh/g. We confirm that the doped POx is redox inactive by X-ray adsorption near edge structure measurements, thus not contributing to the higher capacity. We observe two significant changes of hard carbon's local structures caused by doping. First, the (002) d-spacing inside the turbostratic nanodomains is increased, revealed by both laboratory and synchrotron X-ray diffraction. Second, doping turns turbostratic nanodomains more defective along ab planes, indicated by neutron total scattering and the associated pair distribution function studies. The local structural changes of hard carbon are correlated to the higher capacity, where both the plateau and slope regions in the potential profiles are enhanced. Our study demonstrates that Na-ion storage in hard carbon heavily depends on carbon local structures, where such structures, despite being disordered, can be tuned toward unusually high capacities.

  16. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  17. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Science.gov (United States)

    Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  18. Critical current density above 15 MA cm−2 at 30 K, 3 T in 2.2 μm thick heavily-doped (Gd,Y)Ba2Cu3Ox superconductor tapes

    International Nuclear Information System (INIS)

    Selvamanickam, V; Gharahcheshmeh, M Heydari; Xu, A; Zhang, Y; Galstyan, E

    2015-01-01

    A critical current (I c ) value of 3963 A/12 mm, corresponding to a critical current density (J c ) of 15 MA cm −2 has been achieved at 30 K, 3 T in the orientation of field parallel to the c-axis (B||c) in 2.2 μm thick film (Gd,Y)BaCuO tapes with 20 mol% Zr addition made by metal organic chemical vapor deposition. This J c level is more than a factor of four higher than the J c values of 7.5 mol% Zr-added tapes, which are an industry benchmark. The critical current values in a magnetic field of 3 T parallel to the c-axis in the 2.2 μm thick, 20 mol% Zr-added tape reached 2833 A/12 mm (10.1 MA cm −2 ), 1881 A/12 mm (7.1 MA cm −2 ) and 805 A/12 mm (3.1 MA cm −2 ) at 40 K, 50 K and 65 K respectively. Such high critical current values were possible because of maintaining a strong alignment of BaZrO 3 nanocolumns along the c-axis over the entire film thickness. (fast track communication)

  19. Direct Comparison of Yb.sup.3+./sup.:CaF.sub.2./sub. and heavily doped Yb.sup.3+./sup.:YLF as laser media at room temperature

    Czech Academy of Sciences Publication Activity Database

    Pirri, A.; Alderighi, D.; Toci, G.; Vannini, M.; Nikl, Martin; Sato, H.

    2009-01-01

    Roč. 17, č. 20 (2009), s. 18312-18319 ISSN 1094-4087 Grant - others:AV ČR(CZ) M100100910 Institutional research plan: CEZ:AV0Z10100521 Keywords : Yb 3+ :YLF * Yb 3+ :CaF 2 * solid state laser * diode pumped Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.278, year: 2009

  20. Erbium Doped Fiber Optic Gravimeter

    International Nuclear Information System (INIS)

    Pérez-Sánchez, G G; Pérez-Torres, J R; Flores-Bravo, J A; Álvarez-Chávez, J A; Martínez-Piñón, F

    2017-01-01

    Gravimeters are devices that can be used in a wide range of applications, such as mining, seismology, geodesy, archeology, geophysics and many others. These devices have great sensibility, which makes them susceptible to external vibrations like electromagnetic waves. There are several technologies regarding gravimeters that are of use in industrial metrology. Optical fiber is immune to electromagnetic interference, and together with long period gratings can form high sensibility sensors of small size, offering advantages over other systems with different technologies. This paper shows the development of an optical fiber gravimeter doped with Erbium that was characterized optically for loads going from 1 to 10 kg in a bandwidth between 1590nm to 1960nm, displaying a weight linear response against power. Later on this paper, the experimental results show that the previous described behavior can be modeled as characteristic function of the sensor. (paper)

  1. Fullerenes doped with metal halides

    International Nuclear Information System (INIS)

    Martin, T.P.; Heinebrodt, M.; Naeher, U.; Goehlich, H.; Lange, T.; Schaber, H.

    1993-01-01

    The cage-like structure of fullerenes is a challenge to every experimental to put something inside - to dope the fullerenes. In fact, the research team that first identified C 60 as a football-like molecule quickly succeeded in trapping metal atoms inside and in shrinking the cage around this atom by photofragmentation. In this paper we report the results of ''shrink-wrapping'' the fullerenes around metal halide molecules. Of special interest is the critical size (the minimum number of carbon atoms) that can still enclose the dopant. A rough model for the space available inside a carbon cage gives good agreement with the measured shrinking limits. (author). 8 refs, 6 figs

  2. Screening dynamics in doped titanates

    Energy Technology Data Exchange (ETDEWEB)

    Rubensson, J.E.; Luening, J.; Eisebitt, S. [Forschungszentrum Juelich (Germany)] [and others

    1997-04-01

    The time scale for carrier relaxation in semiconductors is on the same order of magnitude as the life time of shallow core hole states (a few femtoseconds). Resonant Inelastic soft X-ray scattering (RIXS) which involves (virtual) excitations of core levels consequently contains information about the time development of the electronic structure on this time scale. In many cases one can treat the scattering in an absorption (SXA) followed-by-emission (SXE) picture, where simply the rates for various processes can be compared with the intermediate core hole state decay rate as an internal {open_quotes}clock{close_quotes}. By variation of x (0 < x < 1) in La{sub x}Sr{sub 1{minus}x}TiO{sub 3}, the amount of Ti d electrons in the system can be controlled. SrTiO{sub 3} (x=0) is an insulator with an empty Ti d band. With increasing x, electrons are doped into the Ti d-band, and LaTiO{sub 3} (x=1) is a Mott Hubbard insulator with a Ti 3d{sup 1} configuration. In this work the authors demonstrate that the rate for Ti 2p core hole screening in La{sub x}Sr{sub 1{minus}x}TiO{sub 3} is doping dependent. The screening rate increases with the availability of Ti 3d electrons, and they estimate it to be 3.8 x 10{sup 13}/sec in La{sub 0.05}Sr{sub 0.95}TiO{sub 3}.

  3. Hierarchically structured, nitrogen-doped carbon membranes

    KAUST Repository

    Wang, Hong; Wu, Tao

    2017-01-01

    The present invention is a structure, method of making and method of use for a novel macroscopic hierarchically structured, nitrogen-doped, nano-porous carbon membrane (HNDCMs) with asymmetric and hierarchical pore architecture that can be produced

  4. A Quarter Century of Doping Scandals

    DEFF Research Database (Denmark)

    Gleaves, John; Christiansen, Ask Vest

    2013-01-01

    because it marked the first time a high-profile athlete was unceremoniously stripped of his medal rather than having his results covered up or ignored. Johnson’s case is also useful for framing the ongoing issue with doping in elite sports while providing some insight into the current problem sport faces.......With the ongoing doping scandals, revelations, and confessions, it was likely that few celebrated this autumn’s significant anniversary in doping history. Twenty-five years ago—September 26, 1988—news broke of the first major doping scandal in the Olympic Games. Canadian sprinter Ben Johnson, who...... just two days previously had won the 100 meter dash in a world record clip, had tested positive for the banned anabolic steroid stanozolol at the Seoul Olympics. Johnson was neither the first to use prohibited “doping” substances at the Olympics nor the first to get caught. Johnson’s case is notable...

  5. Rare earth oxide doping in oxide cathodes

    International Nuclear Information System (INIS)

    Engelsen, Daniel den; Gaertner, Georg

    2006-01-01

    The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further

  6. Statistical transmutation in doped quantum dimer models.

    Science.gov (United States)

    Lamas, C A; Ralko, A; Cabra, D C; Poilblanc, D; Pujol, P

    2012-07-06

    We prove a "statistical transmutation" symmetry of doped quantum dimer models on the square, triangular, and kagome lattices: the energy spectrum is invariant under a simultaneous change of statistics (i.e., bosonic into fermionic or vice versa) of the holes and of the signs of all the dimer resonance loops. This exact transformation enables us to define the duality equivalence between doped quantum dimer Hamiltonians and provides the analytic framework to analyze dynamical statistical transmutations. We investigate numerically the doping of the triangular quantum dimer model with special focus on the topological Z(2) dimer liquid. Doping leads to four (instead of two for the square lattice) inequivalent families of Hamiltonians. Competition between phase separation, superfluidity, supersolidity, and fermionic phases is investigated in the four families.

  7. Impurity-doped micro-lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    2013-01-01

    Recently rare-earth-ion-doped dielectric channel waveguides have proven their ability to generate highly efficient laser output in the fundamental mode. Here we review our recent achievements obtained in crystalline potassium double tungstates and amorphous aluminum oxide.

  8. Tunneling spectroscopy of heavily underdoped crystals of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}

    Energy Technology Data Exchange (ETDEWEB)

    Ozyuzer, L.; Zasadzinski, J. F.; Miyakawa, N.; Kendziora, C.; Jian, S.; Hinks, D. G.; Gray, K. E.

    2000-02-17

    Crystals of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} with optimal {Tc} = 95 K have been underdoped using two different methods and the superconducting gaps have been obtained by tunneling. In some cases, three different tunneling geometries have been utilized: point contact, STM and break junctions. The first doping method involves control of the oxygen content by annealing in various partial pressures of oxygen. These crystals exhibit a narrow spread of gap values over a wide doping range from overdoped ({Tc} = 56 K) to underdoped with {Tc} = 70 K. However, for underdoped crystals with {Tc} midpoints in the range 25 K--63 K, there is a dramatic increase in the spread of gap values which may signal the development of static phase separation of either chemical or electronic origin. To avoid possible chemical phase separation, the authors have explored another doping procedure which incorporates Dy substitution on the Ca site. These crystals exhibit a relatively narrow superconducting transition width and some preliminary tunneling spectra will be presented.

  9. Brief History of Anti-Doping.

    Science.gov (United States)

    Ljungqvist, Arne

    2017-01-01

    The fight against doping in sport as we know it today commenced by the creation of the International Olympic Committee (IOC) Medical Commission in 1961 following the death of a Danish cyclist during the Rome Olympic Games the year before. After a slow start, the fight got under way as from the early 1970s under the leadership of the IOC and of the International Association of Athletics Federations. Despite a lack of understanding and weak support even from the sports community, a series of measures were taken during the 1970s and 1980s which still form cornerstones of today's anti-doping strategy. In addition to information and education campaigns, the most important examples are the introduction of procedural rules for doping controls, the establishment and follow-up of a list of prohibited substances and methods, the accreditation of doping control laboratories, the introduction of in- and out-of-competition testing, rules for therapeutic use exemption, and the introduction of blood sampling. During the 1990s, the anti-doping fight gained increasing support both inside and outside the sport community. In order to harmonize the wide variety of rules that had developed both in sport organizations and at the domestic level and to promote anti-doping activities, the World Anti-Doping Agency (WADA) was jointly created by the Olympic movement and the public authorities in 1999. WADA is today carrying on the fight supported by the universally accepted WADA Code and an International Anti-Doping Convention under UNESCO. © 2017 S. Karger AG, Basel.

  10. Gene doping: gene delivery for olympic victory

    OpenAIRE

    Gould, David

    2012-01-01

    With one recently recommended gene therapy in Europe and a number of other gene therapy treatments now proving effective in clinical trials it is feasible that the same technologies will soon be adopted in the world of sport by unscrupulous athletes and their trainers in so called ‘gene doping’. In this article an overview of the successful gene therapy clinical trials is provided and the potential targets for gene doping are highlighted. Depending on whether a doping gene product is secreted...

  11. Neutron transmutation doping of gallium arsenide

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-12-01

    Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

  12. Preparation of nitrogen-doped carbon tubes

    Science.gov (United States)

    Chung, Hoon Taek; Zelenay, Piotr

    2015-12-22

    A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

  13. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  14. Phase Separation in Doped Mott Insulators

    Directory of Open Access Journals (Sweden)

    Chuck-Hou Yee

    2015-04-01

    Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

  15. Porous allograft bone scaffolds: doping with strontium.

    Directory of Open Access Journals (Sweden)

    Yantao Zhao

    Full Text Available Strontium (Sr can promote the process of bone formation. To improve bioactivity, porous allograft bone scaffolds (ABS were doped with Sr and the mechanical strength and bioactivity of the scaffolds were evaluated. Sr-doped ABS were prepared using the ion exchange method. The density and distribution of Sr in bone scaffolds were investigated by inductively coupled plasma optical emission spectrometry (ICP-OES, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. Controlled release of strontium ions was measured and mechanical strength was evaluated by a compressive strength test. The bioactivity of Sr-doped ABS was investigated by a simulated body fluid (SBF assay, cytotoxicity testing, and an in vivo implantation experiment. The Sr molar concentration [Sr/(Sr+Ca] in ABS surpassed 5% and Sr was distributed nearly evenly. XPS analyses suggest that Sr combined with oxygen and carbonate radicals. Released Sr ions were detected in the immersion solution at higher concentration than calcium ions until day 30. The compressive strength of the Sr-doped ABS did not change significantly. The bioactivity of Sr-doped material, as measured by the in vitro SBF immersion method, was superior to that of the Sr-free freeze-dried bone and the Sr-doped material did not show cytotoxicity compared with Sr-free culture medium. The rate of bone mineral deposition for Sr-doped ABS was faster than that of the control at 4 weeks (3.28 ± 0.23 µm/day vs. 2.60 ± 0.20 µm/day; p<0.05. Sr can be evenly doped into porous ABS at relevant concentrations to create highly active bone substitutes.

  16. EPR in non-doped irradiated polyacetylene

    International Nuclear Information System (INIS)

    Hola, O.; Stasko, A.; Foeldesova, M.

    1993-01-01

    The influence of γ-irradiation on the paramagnetic properties of non-doped polyacetylene at low and high radiation doses has been studied and summarized. The dependence of the EPR spectra on the radiation dose in irradiated polyacetylene has been measured. No essential changes of the spin mobility as a consequence of irradiation were observed. The measurements of spin concentration confirm the high resistivity of non-doped polyacetylene to radiation. (author) 9 refs

  17. Doping in sport: effects, harm and misconceptions.

    Science.gov (United States)

    Birzniece, V

    2015-03-01

    Doping in sport is a widespread problem not just among elite athletes, but even more so in recreational sports. In scientific literature, major emphasis is placed on doping detection, whereas detrimental effects of doping agents on athletes' health are seldom discussed. Androgenic anabolic steroids are well known for their positive effects on muscle mass and strength. Human growth hormone also increases muscle mass, although the majority of that is an increase in extracellular fluid and not the functional muscle mass. In recreational athletes, growth hormone does not have major effect on muscle strength, power or aerobic capacity, but stimulates anaerobic exercise capacity. Erythropoietin administration increases oxygen-carrying capacity of blood improving endurance measures, whereas systemic administration of beta-adrenergic agonists may have positive effect on sprint capacity, and beta-adrenergic antagonists reduce muscle tremor. Thus, there are certain drugs that can improve selective aspects of physical performance. However, most of the doping agents exert serious side-effects, especially when used in combination, at high doses and for a long duration. The extent of long-term health consequences is difficult to predict, but likely to be substantial, especially when gene doping is considered. This review summarises the main groups of doping agents used by athletes, with the main focus on their effects on athletic performance and adverse effects. © 2014 Royal Australasian College of Physicians.

  18. Detection of EPO gene doping in blood.

    Science.gov (United States)

    Neuberger, Elmo W I; Jurkiewicz, Magdalena; Moser, Dirk A; Simon, Perikles

    2012-11-01

    Gene doping--or the abuse of gene therapy--will continue to threaten the sports world. History has shown that progress in medical research is likely to be abused in order to enhance human performance. In this review, we critically discuss the progress and the risks associated with the field of erythropoietin (EPO) gene therapy and its applicability to EPO gene doping. We present typical vector systems that are employed in ex vivo and in vivo gene therapy trials. Due to associated risks, gene doping is not a feasible alternative to conventional EPO or blood doping at this time. Nevertheless, it is well described that about half of the elite athlete population is in principle willing to risk its health to gain a competitive advantage. This includes the use of technologies that lack safety approval. Sophisticated detection approaches are a prerequisite for prevention of unapproved and uncontrolled use of gene therapy technology. In this review, we present current detection approaches for EPO gene doping, with a focus on blood-based direct and indirect approaches. Gene doping is detectable in principle, and recent DNA-based detection strategies enable long-term detection of transgenic DNA (tDNA) following in vivo gene transfer. Copyright © 2012 John Wiley & Sons, Ltd.

  19. Synthesis of Antimony Doped Amorphous Carbon Films

    Science.gov (United States)

    Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

    2013-06-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  20. Synthesis of Antimony Doped Amorphous Carbon Films

    International Nuclear Information System (INIS)

    Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

    2013-01-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  1. NuSTAR J033202-2746.8: direct constraints on the Compton reflection in a heavily obscured quasar at z ≈ 2

    DEFF Research Database (Denmark)

    Del Moro, A.; Mullaney, J. R.; Alexander, D. M.

    2014-01-01

    We report Nuclear Spectroscopic Telescope Array (NuSTAR) observations of NuSTAR J033202-2746.8, a heavily obscured, radio-loud quasar detected in the Extended Chandra Deep Field-South, the deepest layer of the NuSTAR extragalactic survey (∼400 ks, at its deepest). NuSTAR J033202-2746.8 is reliably......-2746.8, indicating that this source is a heavily obscured quasar (NH = 5.6+−0.80.9 × 1023 cm−2) with luminosity L10-40 keV ≈ 6.4 × 1044 erg s−1. Although existing optical and near-infrared (near-IR) data, as well as follow-up spectroscopy with the Keck and VLT telescopes, failed to provide a secure redshift......-Newton data alone. The measured reflection fraction is higher than the R∼0 typically observed in bright radio-loud quasars such as NuSTAR J033202-2746.8, which has L1.4 GHz≈1027 W Hz−1. Constraining the spectral shape of active galactic nuclei (AGNs), including bright quasars, is very important...

  2. Phase transitions and doping in semiconductor nanocrystals

    Science.gov (United States)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  3. Superconductivity in doped two-leg ladder cuprates

    International Nuclear Information System (INIS)

    Qin Jihong; Yuan Feng; Feng Shiping

    2006-01-01

    Within the t-J ladder model, superconductivity with a modified d-wave symmetry in doped two-leg ladder cuprates is investigated based on the kinetic energy driven superconducting mechanism. It is shown that the spin-liquid ground-state at the half-filling evolves into the superconducting ground-state upon doping. In analogy to the doping dependence of the superconducting transition temperature in the planar cuprate superconductors, the superconducting transition temperature in doped two-leg ladder cuprates increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime

  4. Doping and musculoskeletal system: short-term and long-lasting effects of doping agents.

    Science.gov (United States)

    Nikolopoulos, Dimitrios D; Spiliopoulou, Chara; Theocharis, Stamatios E

    2011-10-01

    Doping is a problem that has plagued the world of competition and sports for ages. Even before the dawn of Olympic history in ancient Greece, competitors have looked for artificial means to improve athletic performance. Since ancient times, athletes have attempted to gain an unfair competitive advantage through the use of doping substances. A Prohibited List of doping substances and methods banned in sports is published yearly by the World Anti-Doping Agency. Among the substances included are steroidal and peptide hormones and their modulators, stimulants, glucocorticosteroids, β₂-agonists, diuretics and masking agents, narcotics, and cannabinoids. Blood doping, tampering, infusions, and gene doping are examples of prohibited methods indicated on the List. Apart from the unethical aspect of doping, as it abrogates fair-play's principle, it is extremely important to consider the hazards it presents to the health and well-being of athletes. The referred negative effects for the athlete's health have to do, on the one hand, by the high doses of the performance-enhancing agents and on the other hand, by the relentless, superhuman strict training that the elite or amateur athletes put their muscles, bones, and joints. The purpose of this article is to highlight the early and the long-lasting consequences of the doping abuse on bone and muscle metabolism. © 2010 The Authors Fundamental and Clinical Pharmacology © 2010 Société Française de Pharmacologie et de Thérapeutique.

  5. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed

    2017-05-23

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  6. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wenjiang [Big Data and Information Engineering College of Guizhou University, Guiyang 550025 (China); Guizhou University of Finance and Economics, Guiyang 550025 (China); Deng, Xiaoqing, E-mail: xq-deng@163.com, E-mail: caish@mail.gufe.edu.cn [School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Cai, Shaohong, E-mail: xq-deng@163.com, E-mail: caish@mail.gufe.edu.cn [Guizhou University of Finance and Economics, Guiyang 550025 (China)

    2016-07-15

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  7. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    International Nuclear Information System (INIS)

    Liu, Wenjiang; Deng, Xiaoqing; Cai, Shaohong

    2016-01-01

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  8. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

    2017-01-01

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  9. Growth hormone doping: a review

    Directory of Open Access Journals (Sweden)

    Erotokritou-Mulligan I

    2011-07-01

    Full Text Available Ioulietta Erotokritou-Mulligan, Richard IG Holt, Peter H SönksenDevelopmental Origins of Health and Disease Division, University of Southampton School of Medicine, The Institute of Developmental Science, Southampton General Hospital, Southampton, UKAbstract: The use of growth hormone (GH as a performance enhancing substance was first promoted in lay publications, long before scientists fully acknowledged its benefits. It is thought athletes currently use GH to enhance their athletic performance and to accelerate the healing of sporting injuries. Over recent years, a number of high profile athletes have admitted to using GH. To date, there is only limited and weak evidence for its beneficial effects on performance. Nevertheless the “hype” around its effectiveness and the lack of a foolproof detection methodology that will detect its abuse longer than 24 hours after the last injection has encouraged its widespread use. This article reviews the current evidence of the ergogenic effects of GH along with the risks associated with its use. The review also examines methodologies, both currently available and in development for detecting its abuse.Keywords: performance enhancing substance, GH, doping in sport, detection methods

  10. Superconductivity in doped Dirac semimetals

    Science.gov (United States)

    Hashimoto, Tatsuki; Kobayashi, Shingo; Tanaka, Yukio; Sato, Masatoshi

    2016-07-01

    We theoretically study intrinsic superconductivity in doped Dirac semimetals. Dirac semimetals host bulk Dirac points, which are formed by doubly degenerate bands, so the Hamiltonian is described by a 4 ×4 matrix and six types of k -independent pair potentials are allowed by the Fermi-Dirac statistics. We show that the unique spin-orbit coupling leads to characteristic superconducting gap structures and d vectors on the Fermi surface and the electron-electron interaction between intra and interorbitals gives a novel phase diagram of superconductivity. It is found that when the interorbital attraction is dominant, an unconventional superconducting state with point nodes appears. To verify the experimental signature of possible superconducting states, we calculate the temperature dependence of bulk physical properties such as electronic specific heat and spin susceptibility and surface state. In the unconventional superconducting phase, either dispersive or flat Andreev bound states appear between point nodes, which leads to double peaks or a single peak in the surface density of states, respectively. As a result, possible superconducting states can be distinguished by combining bulk and surface measurements.

  11. Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

    Science.gov (United States)

    Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

    2018-03-01

    Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Page | 158 PERMITTING A CERTAIN LEVEL OF DOPING IN ...

    African Journals Online (AJOL)

    Fr. Ikenga

    World Anti-Doping Agency (WADA) and International Olympic Committee (IOC) ... forms of doping certainly have adverse health effects including given the fact ... fair in the first place, as variations in individual natural abilities, socio-economic.

  13. type doping in the channel of graphene nanoribbon

    Indian Academy of Sciences (India)

    type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...

  14. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz; Benduhn, Johannes; Pahner, Paul; Nell, Bernhard; Schwarze, Martin; Kleemann, Hans; Krammer, Markus; Zojer, Karin; Vandewal, Koen; Leo, Karl

    2018-01-01

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping

  15. Gear Tooth Root Stresses of a Very Heavily Loaded Gear Pair-Case Study: Orbiter Body Flap Actuator Pinion and Ring Gear

    Science.gov (United States)

    Krantz, Timothy L.; Handschuh, Robert F.

    2015-01-01

    The space shuttle orbiter's body flap actuator gearing was assessed as a case study of the stresses for very heavily loaded external-internal gear pairs (meshing pinion and ring gear). For many applications, using the high point of single tooth contact (HPSTC) to locate the position of the tooth force is adequate for assessing the maximum tooth root stress condition. But for aerospace gearing such an approach may be inadequate for assessing the stress condition while also simultaneously minimizing mass. In this work specialized contact analyses and finite element methods were used to study gear tooth stresses of body flap actuator gears. The analytical solutions considered the elastic deformations as an inherent part of the solutions. The ratio for the maximum tooth stresses using the HPSTC approach solutions relative to the contact analysis and finite element solutions were 1.40 for the ring gear and 1.28 for the pinion gear.

  16. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  17. Replicative phenotyping adds value to genotypic resistance testing in heavily pre-treated HIV-infected individuals - the Swiss HIV Cohort Study

    Directory of Open Access Journals (Sweden)

    Martinetti Gladys

    2011-01-01

    Full Text Available Abstract Background Replicative phenotypic HIV resistance testing (rPRT uses recombinant infectious virus to measure viral replication in the presence of antiretroviral drugs. Due to its high sensitivity of detection of viral minorities and its dissecting power for complex viral resistance patterns and mixed virus populations rPRT might help to improve HIV resistance diagnostics, particularly for patients with multiple drug failures. The aim was to investigate whether the addition of rPRT to genotypic resistance testing (GRT compared to GRT alone is beneficial for obtaining a virological response in heavily pre-treated HIV-infected patients. Methods Patients with resistance tests between 2002 and 2006 were followed within the Swiss HIV Cohort Study (SHCS. We assessed patients' virological success after their antiretroviral therapy was switched following resistance testing. Multilevel logistic regression models with SHCS centre as a random effect were used to investigate the association between the type of resistance test and virological response (HIV-1 RNA Results Of 1158 individuals with resistance tests 221 with GRT+rPRT and 937 with GRT were eligible for analysis. Overall virological response rates were 85.1% for GRT+rPRT and 81.4% for GRT. In the subgroup of patients with >2 previous failures, the odds ratio (OR for virological response of GRT+rPRT compared to GRT was 1.45 (95% CI 1.00-2.09. Multivariate analyses indicate a significant improvement with GRT+rPRT compared to GRT alone (OR 1.68, 95% CI 1.31-2.15. Conclusions In heavily pre-treated patients rPRT-based resistance information adds benefit, contributing to a higher rate of treatment success.

  18. Blood doping at the Olympic Games.

    Science.gov (United States)

    Fitch, Kenneth D

    2017-11-01

    The objective of this paper was to review our knowledge of athletes who have, are believed to have or have attempted to engage in blood doping to enhance their performance at an Olympic Games. The paper focused on the Games from Munich 1972 to London 2012 and the author had a medical role at each of the Olympics that is discussed. The study revealed that Olympic athletes have benefitted from manipulating their blood by re-infusion of autologous or infusion of homologous blood and by administering erythropoiesis stimulating agents, notably the three generations of erythropoietins. Fifty seven athletes have been sanctioned with 12 athletes forfeiting 17 Olympic medals including 12 gold medals because of blood doping. Until 1986, the infusion of blood was not prohibited in sport but considered unethical. Erythropoietin was prohibited by the International Olympic Committee's Medical Commission in 1990. There has been a change as to how Olympic athletes have enhanced performance by blood doping, commencing with blood infusion and later administering erythropoiesis stimulating agents and significant advances have occurred in detecting such misuse. Currently, the hematological component of World Anti-Doping Agency's athlete biological passport is an important but not infallible mechanism to identify athletes who cheat by blood doping.

  19. Electrospark doping of steel with tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Seksenalina, Malika, E-mail: sportmiss@bk.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irinaikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Kunitsyna, Tatyana, E-mail: kma11061990@mail.ru; Vlasov, Victor, E-mail: rector@tsuab.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Klopotov, Anatoliy, E-mail: klopotovaa@tsuab.ru [National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Ivanov, Yuriy, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation)

    2016-01-15

    The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.

  20. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  1. Electrospark doping of steel with tungsten

    International Nuclear Information System (INIS)

    Denisova, Yulia; Shugurov, Vladimir; Petrikova, Elizaveta; Seksenalina, Malika; Ivanova, Olga; Ikonnikova, Irina; Kunitsyna, Tatyana; Vlasov, Victor; Klopotov, Anatoliy; Ivanov, Yuriy

    2016-01-01

    The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties

  2. Current Status of Doping in Japan Based on Japan Anti-Doping Disciplinary Panels of the Japan Anti-Doping Agency (JADA): A Suggestion on Anti-Doping Activities by Pharmacists in Japan.

    Science.gov (United States)

    Imanishi, Takashi; Kawabata, Takayoshi; Takayama, Akira

    2017-01-01

    In 2009, the Japan Anti-Doping Agency (JADA) established the "Sports Pharmacist Accreditation Program" to prevent doping in sports. Since then, anti-doping activities in Japan have been attracting attention. In this study, we investigated research about the current status of doping from 2007 to 2014 in Japan to make anti-doping activities more concrete, and we also discussed future anti-doping activities by pharmacists. In Japan, bodybuilding was the sporting event with the highest number and rate of doping from 2007 to 2014. Many of the positive doping cases were detected for class S1 (anabolic agents), S5 (diuretics and masking agents), and S6 (stimulants). Within class S1, supplements were the main cause of positive doping. Within class S5, medicines prescribed by medical doctors were the main cause of positive doping. Within class S6, non-prescription medicines (e.g., OTC) were the main cause of positive doping. When we looked at the global statistics on doping, many of the positive doping cases were detected for class S1. On comparing the Japanese statistics with the global statistics, the rate of positive doping caused by class S1 was significantly lower, but that caused by classes S5 and S6 was significantly higher in Japan than in the world. In conclusion, pharmacists in Japan should pay attention to class S1, S5, and S6 prohibited substances and to the sport events of bodybuilding. Based on this study, sports pharmacists as well as common pharmacists should suggest new anti-doping activities to prevent doping in the future.

  3. Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

    Directory of Open Access Journals (Sweden)

    Shiraz Labib

    2013-12-01

    Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

  4. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  5. Doped luminescent materials and particle discrimination using same

    Science.gov (United States)

    Doty, F. Patrick; Allendorf, Mark D; Feng, Patrick L

    2014-10-07

    Doped luminescent materials are provided for converting excited triplet states to radiative hybrid states. The doped materials may be used to conduct pulse shape discrimination (PSD) using luminescence generated by harvested excited triplet states. The doped materials may also be used to detect particles using spectral shape discrimination (SSD).

  6. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

    Science.gov (United States)

    Sekulic, Damir; Tahiraj, Enver; Zvan, Milan; Zenic, Natasa; Uljevic, Ognjen; Lesnik, Blaz

    2016-01-01

    Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females) involved in volleyball (n = 77), soccer (n = 163), basketball (n = 114) and handball (n = 103). Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports. Key points The doping knowledge among Kosovar team-sport athletes is very low and systematic anti-doping education is urgently needed. The highest risk of doping behaviour in males is found for those athletes who had been

  7. Radiophotoluminescence from silver-doped phosphate glass

    International Nuclear Information System (INIS)

    Miyamoto, Y.; Takei, Y.; Nanto, H.; Kurobori, T.; Konnai, A.; Yanagida, T.; Yoshikawa, A.; Shimotsuma, Y.; Sakakura, M.

    2011-01-01

    Glass dosimeter utilizing radiophotoluminescence (RPL) is one of accumulation type solid state dosimeters, which is based on luminescence phenomenon of silver (Ag + ions)-doped phosphate glass exposed to ionizing radiation. In this study, to clarify the emission mechanism of yellow and blue RPL peaks, optical properties of Ag + -doped glass, such as optical absorption spectrum, RPL excitation spectrum before and after X-ray irradiation as well as the lifetime of both RPL peaks are measured. From the results, we discuss the emission mechanism of yellow (peaked at 2.21 eV) and blue (peaked at 2.70 eV) RPL using a proposed energy band diagram for RPL emission and excitation in Ag + -doped phosphate glass. It is found that the radiative lifetime of blue RPL is three orders of magnitude faster than that of yellow RPL.

  8. Gene doping: gene delivery for olympic victory.

    Science.gov (United States)

    Gould, David

    2013-08-01

    With one recently recommended gene therapy in Europe and a number of other gene therapy treatments now proving effective in clinical trials it is feasible that the same technologies will soon be adopted in the world of sport by unscrupulous athletes and their trainers in so called 'gene doping'. In this article an overview of the successful gene therapy clinical trials is provided and the potential targets for gene doping are highlighted. Depending on whether a doping gene product is secreted from the engineered cells or is retained locally to, or inside engineered cells will, to some extent, determine the likelihood of detection. It is clear that effective gene delivery technologies now exist and it is important that detection and prevention plans are in place. © 2012 The Author. British Journal of Clinical Pharmacology © 2012 The British Pharmacological Society.

  9. Electron transport in doped fullerene molecular junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

  10. Positron annihilation studies in Hf doped YBCO

    International Nuclear Information System (INIS)

    Gopalan, P.; Priya, E.R.; Premila, M.; Sundar, C.S.; Gopinathan, K.P.

    1992-01-01

    The variation of positron lifetime and oxygen stoichiometry as a function of quench temperature has been measured in undoped and 0.5at%, 0.75at%, and 1.0 at% Hf doped YBCO. In both the undoped and Hf doped samples, the lifetime decreases and the oxygen content increases as the quench temperature is lowered from 900degC to 300degC. The lifetime in the tetragonal phase (900degC) decreases with the increase in Hf content, whereas in the orthorhombic phase (450degC) it increases. The difference in lifetime between the tetragonal and orthorhombic phases decreases with the increase in the Hf content. These trends are discussed in terms of the influence of Hf doping on the oxygen content and the positron density distribution in YBCO

  11. Fuel cells with doped lanthanum gallate electrolyte

    Science.gov (United States)

    Feng, Man; Goodenough, John B.; Huang, Keqin; Milliken, Christopher

    Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800°C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800°C was achieved. our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum galiate and achieve higher power density at 800°C from solid oxide fuel cells.

  12. Fuel cells with doped lanthanum gallate electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Feng Man [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Goodenough, J.B. [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Huang Keqin [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Milliken, C. [Cerematec, Inc., Salt Lake City, UT (United States)

    1996-11-01

    Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800 C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800 C was achieved, our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum gallate and achieve higher power density at 800 C from solid oxide fuel cells. (orig.)

  13. Spin Hall Effect in Doped Semiconductor Structures

    Science.gov (United States)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  14. Effects of pressure on doped Kondo insulators

    International Nuclear Information System (INIS)

    Lee, Chengchung; Xu, Wang

    1999-08-01

    The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

  15. Doping monolayer graphene with single atom substitutions

    KAUST Repository

    Wang, Hongtao

    2012-01-11

    Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

  16. Doping in elite sport – do the fans care? : public opinion on the consequences of doping scandals

    OpenAIRE

    Solberg, Harry Arne; Hanstad, Dag Vidar; Thøring, Thor Atle

    2010-01-01

    www.imrpublications.com There are indications that commercial stakeholders are reluctant to associate with sports involved in doping scandals. A survey of 925 Norwegian sports consumers supports this reluctance, showing no tolerance for pure doping substances. The majority were in favour of tough responses to athletes and sports involved in doping. Older respondents were more negative towards doping. Those who were strongly interested in sport were more willing than others to a...

  17. Doping Attitudes and Covariates of Potential Doping Behaviour in High-Level Team-Sport Athletes; Gender Specific Analysis

    Directory of Open Access Journals (Sweden)

    Damir Sekulic, Enver Tahiraj, Milan Zvan, Natasa Zenic, Ognjen Uljevic, Blaz Lesnik

    2016-12-01

    Full Text Available Team sports are rarely studied with regard to doping behaviour and doping-related factors regardless of their global popularity. This study aimed to investigate doping factors and covariates of potential doping behaviour in high-level team-sport athletes. The subjects were 457 high-performing, national- and international-level athletes (21.9 ± 3.4 years of age; 179 females involved in volleyball (n = 77, soccer (n = 163, basketball (n = 114 and handball (n = 103. Previously validated self-administered questionnaires aimed at evidencing sport factors, doping-related factors, knowledge on sport nutrition and doping, and attitudes to performance enhancement were used. The results indicated a higher doping likelihood in male athletes, with a significant gender difference for basketball and handball. In males, a higher doping likelihood is found for athletes who had achieved better results at junior-age level, those who regularly consume dietary supplements, and who perceive their sport as being contaminated by doping. A higher sport achievement at senior-age level is protective against potential doping behaviour in males. In females, a higher likelihood of doping is evidenced in those athletes involved in binge drinking, while a lower tendency for doping is evidenced in female athletes who possess better knowledge on sport nutrition. Knowledge about doping is very low and thus education about doping is urgently needed. An improvement of knowledge on sport nutrition might be a potentially effective method for reducing the tendency for doping in females. Future studies should consider other approaches and theories, such as theory of planned behaviour and/or social-cognitive theory, in studying the problem of doping behaviour in team-sports.

  18. Gene doping in sport - perspectives and risks.

    Science.gov (United States)

    Brzeziańska, E; Domańska, D; Jegier, A

    2014-12-01

    In the past few years considerable progress regarding the knowledge of the human genome map has been achieved. As a result, attempts to use gene therapy in patients' management are more and more often undertaken. The aim of gene therapy is to replace defective genes in vivo and/or to promote the long-term endogenous synthesis of deficient protein. In vitro studies improve the production of human recombinant proteins, such as insulin (INS), growth hormone (GH), insulin-like growth factor-1 (IGF-1) and erythropoietin (EPO), which could have therapeutic application. Unfortunately, genetic methods developed for therapeutic purposes are increasingly being used in competitive sports. Some new substances (e.g., antibodies against myostatin or myostatin blockers) might be used in gene doping in athletes. The use of these substances may cause an increase of body weight and muscle mass and a significant improvement of muscle strength. Although it is proven that uncontrolled manipulation of genetic material and/or the introduction of recombinant proteins may be associated with health risks, athletes are increasingly turning to banned gene doping. At the same time, anti-doping research is undertaken in many laboratories around the world to try to develop and refine ever newer techniques for gene doping detection in sport. Thanks to the World Anti-Doping Agency (WADA) and other sports organizations there is a hope for real protection of athletes from adverse health effects of gene doping, which at the same time gives a chance to sustain the idea of fair play in sport.

  19. Advances in highly doped upconversion nanoparticles.

    Science.gov (United States)

    Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

    2018-06-20

    Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

  20. Doping profile measurement on textured silicon surface

    Science.gov (United States)

    Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

    2018-04-01

    In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

  1. Microdefects in neutron-transmutationaly doped silicon

    International Nuclear Information System (INIS)

    Vysotskaya, V.V.; Gorin, S.N.; Gres'kov, I.M.; Sobolev, N.A.; Shek, E.I.

    1988-01-01

    Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed

  2. Microdefects in neutron-transmutationaly doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vysotskaya, V V; Gorin, S N; Gres' kov, I M; Sobolev, N A; Shek, E I

    1988-03-01

    Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.

  3. Hierarchically structured, nitrogen-doped carbon membranes

    KAUST Repository

    Wang, Hong

    2017-08-03

    The present invention is a structure, method of making and method of use for a novel macroscopic hierarchically structured, nitrogen-doped, nano-porous carbon membrane (HNDCMs) with asymmetric and hierarchical pore architecture that can be produced on a large-scale approach. The unique HNDCM holds great promise as components in separation and advanced carbon devices because they could offer unconventional fluidic transport phenomena on the nanoscale. Overall, the invention set forth herein covers a hierarchically structured, nitrogen-doped carbon membranes and methods of making and using such a membranes.

  4. Current anti-doping policy: a critical appraisal.

    Science.gov (United States)

    Kayser, Bengt; Mauron, Alexandre; Miah, Andy

    2007-03-29

    Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less impact on amateur sports and the general public. We review this recent development of increasingly severe anti-doping control measures and find them based on questionable ethical grounds. The ethical foundation of the war on doping consists of largely unsubstantiated assumptions about fairness in sports and the concept of a "level playing field". Moreover, it relies on dubious claims about the protection of an athlete's health and the value of the essentialist view that sports achievements reflect natural capacities. In addition, costly antidoping efforts in elite competitive sports concern only a small fraction of the population. From a public health perspective this is problematic since the high prevalence of uncontrolled, medically unsupervised doping practiced in amateur sports and doping-like behaviour in the general population (substance use for performance enhancement outside sport) exposes greater numbers of people to potential harm. In addition, anti-doping has pushed doping and doping-like behaviour underground, thus fostering dangerous practices such as sharing needles for injection. Finally, we argue that the involvement of the medical profession in doping and anti-doping challenges the principles of non-maleficience and of privacy protection. As such, current anti-doping measures potentially introduce problems of greater impact than are solved, and place physicians working with athletes or in anti-doping settings in an ethically difficult position. In response, we argue on behalf of enhancement practices in sports within a framework of medical supervision. Current anti-doping

  5. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  6. Synthesis and characterization of chromium doped boehmite nanofibres

    International Nuclear Information System (INIS)

    Yang Jing; Frost, Ray L.; Yuan Yong

    2009-01-01

    Thermogravimetric and differential thermogravimetric analysis has been used to study synthesised chromium doped boehmite. The dehydroxylation temperature increases significantly from 0 to 5% doping, after which the dehydroxylation temperature shows a small steady increase up to the 20% doping level. The temperature of dehydroxylation increases with time of hydrothermal treatment. Chromium doped boehmite nanofibres were also characterised by X-ray diffraction and transmission electron microscopy. Hydrothermal treatment of doped boehmite with chromium resulted in the formation of nanofibres over a wide dopant range. Nanofibres up to 500 nm in length and between 4 and 6 nm in width were produced

  7. PULSION registered HP: Tunable, High Productivity Plasma Doping

    International Nuclear Information System (INIS)

    Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

    2011-01-01

    Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism--deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

  8. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    International Nuclear Information System (INIS)

    Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

    2017-01-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

  9. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    Science.gov (United States)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  10. Hydrogen Solubility in Pr-doped and Un-doped YSZ for One Chamber Fuel Cell

    DEFF Research Database (Denmark)

    Bay, Lasse; Horita, T.; Sakai, N.

    1998-01-01

    SIMS analysis. Doping of Pr in the YSZ resulted in a higher intensity of the D ion, which indicated that hydrogen solubility was raised by the doping. The solubility of hydrogen in the electrolyte may affect the performance of one chamber fuel cells. (C) 1998 Elsevier Science B.V. All rights reserved.......Yttria-stabilised zirconia electrolytes (YSZ and Pr-doped YSZ) and yttria-doped strontium cerate (SYC) were tested in a one chamber fuel cell fed with a mixture of methane and air at 1223 K. The obtained performances were 4 mW cm(-2), 3 mW cm(-2), 2.5 mW cm(-2), and 0.15 mW cm(-2) for SYC, 1.8 mol...

  11. A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

    Science.gov (United States)

    Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

    2018-04-01

    This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

  12. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application

    International Nuclear Information System (INIS)

    Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S.; Maiti, Tapas K.; Banerjee, Indranil

    2016-01-01

    ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co"2"+) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co"+"2) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co"+"2 influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co"+"2 doping.

  13. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  14. Double-wall carbon nanotubes doped with different Br2 doping levels: a resonance Raman study.

    Science.gov (United States)

    do Nascimento, Gustavo M; Hou, Taige; Kim, Yoong Ahm; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Akuzawa, Noboru; Dresselhaus, Mildred S

    2008-12-01

    This report focuses on the effects of different Br2 doping levels on the radial breathing modes of "double-wall carbon nanotube (DWNT) buckypaper". The resonance Raman profile of the Br2 bands are shown for different DWNT configurations with different Br2 doping levels. Near the maximum intensity of the resonance Raman profile, mainly the Br2 molecules adsorbed on the DWNT surface contribute strongly to the observed omega(Br-Br) Raman signal.

  15. Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

    Directory of Open Access Journals (Sweden)

    Xiaojun Zhu

    2015-01-01

    Full Text Available We use the successive ionic layer adsorption and reaction (SILAR method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

  16. Effect of Sn doping on the room temperature magnetodielectric properties of yttrium iron garnet

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhizhi; Chen, Fu; Li, Junnan; Feng, Zekun; Nie, Yan, E-mail: nieyan@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2015-10-21

    The structures, magnetic properties, permittivity spectra, and magnetodielectric (MD) effects of polycrystalline Y{sub 3}Fe{sub 5−x}Sn{sub x}O{sub 12} compounds prepared by solid state reactions were systematically investigated. The substitution of Sn{sup 4+} leads to lattice expansion and the donation of excess electrons in ceramics, which affects the concentration of Fe{sup 2+}, space charge, and electric dipole. As a result, as the amount of Sn dopant increases, so does saturation magnetization and permittivity in the low frequency band. The MD coefficient ([ε{sub r}(H) − ε{sub r}(0)]/ε{sub r}(0)) of lightly doped samples (x ≤ 0.05) is negative in the entire frequency band, reaching −2.3% at 350 MHz and 0.6 T for Y{sub 3}Fe{sub 4.95}Sn{sub 0.05}O{sub 12} ceramics. The MD coefficient of heavily doped samples (x > 0.05) is positive in the low frequency band, reaching 0.83% at 10 MHz and 0.6 T for Y{sub 3}Fe{sub 4.925}Sn{sub 0.075}O{sub 12} ceramics, and then decreasing with the increasing frequency, gradually becoming negative in the high frequency band. A detailed explanation is provided based on the origin of permittivity. This study provides a new methodology according to which the MD materials may be designed in order to satisfy the requirements of engineering applications.

  17. NuSTAR J033202-2746.8: Direct constraints on the Compton reflection in a heavily obscured quasar at z ≈ 2

    Energy Technology Data Exchange (ETDEWEB)

    Del Moro, A.; Mullaney, J. R.; Alexander, D. M.; Aird, J. A.; Gandhi, P. [Department of Physics, Durham University, South Road, Durham, DH1 3LE (United Kingdom); Comastri, A.; Vignali, C.; Gilli, R. [INAF-Osservatorio Astronomico di Bologna, Via Ranzani 1, I-40127 Bologna (Italy); Bauer, F. E. [Instituto de Astrofísica, Facultad de Física, Pontificia Universidad Católica de Chile, 306, Santiago 22 (Chile); Treister, E. [Departamento de Astronomía, Universidad de Concepción, Casilla 160-C, Concepción (Chile); Stern, D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Mail Stop 169-221, Pasadena, CA 91109 (United States); Civano, F. [Department of Physics and Astronomy, Dartmouth College, 6127 Wilder Laboratory, Hanover, NH 03755 (United States); Ranalli, P. [National Observatory of Athens, Institute of Astronomy, Astrophysics, Space Applications and Remote Sensing, Metaxa and Pavlou St., 15236 Penteli (Greece); Ballantyne, D. R. [Center for Relativistic Astrophysics, School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Baloković, M. [Cahill Center for Astrophysics, 1216 East California Boulevard, California Institute of Technology, Pasadena, CA 91125 (United States); Boggs, S. E. [Space Sciences Laboratory, University of California, Berkeley, CA 94720 (United States); Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, The Pennsylvania State University, University Park, PA 16802 (United States); Christensen, F. E. [DTU Space-National Space Institute, Technical University of Denmark, Elektrovej 327, DK-2800 Lyngby (Denmark); Craig, W. W. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Hailey, C. J., E-mail: agnese.del-moro@durham.ac.uk [Columbia Astrophysics Laboratory, 550 W 120th Street, Columbia University, NY 10027 (United States); and others

    2014-05-01

    We report Nuclear Spectroscopic Telescope Array (NuSTAR) observations of NuSTAR J033202-2746.8, a heavily obscured, radio-loud quasar detected in the Extended Chandra Deep Field-South, the deepest layer of the NuSTAR extragalactic survey (∼400 ks, at its deepest). NuSTAR J033202-2746.8 is reliably detected by NuSTAR only at E > 8 keV and has a very flat spectral slope in the NuSTAR energy band (Γ=0.55{sub −0.64}{sup +0.62}; 3-30 keV). Combining the NuSTAR data with extremely deep observations by Chandra and XMM-Newton (4 Ms and 3 Ms, respectively), we constrain the broad-band X-ray spectrum of NuSTAR J033202-2746.8, indicating that this source is a heavily obscured quasar (N{sub H}=5.6{sub −0.8}{sup +0.9}×10{sup 23} cm{sup –2}) with luminosity L {sub 10-40} {sub keV} ≈ 6.4 × 10{sup 44} erg s{sup –1}. Although existing optical and near-infrared (near-IR) data, as well as follow-up spectroscopy with the Keck and VLT telescopes, failed to provide a secure redshift identification for NuSTAR J033202-2746.8, we reliably constrain the redshift z = 2.00 ± 0.04 from the X-ray spectral features (primarily from the iron K edge). The NuSTAR spectrum shows a significant reflection component (R=0.55{sub −0.37}{sup +0.44}), which was not constrained by previous analyses of Chandra and XMM-Newton data alone. The measured reflection fraction is higher than the R ∼ 0 typically observed in bright radio-loud quasars such as NuSTAR J033202-2746.8, which has L {sub 1.4} {sub GHz} ≈ 10{sup 27} W Hz{sup –1}. Constraining the spectral shape of active galactic nuclei (AGNs), including bright quasars, is very important for understanding the AGN population, and can have a strong impact on the modeling of the X-ray background. Our results show the importance of NuSTAR in investigating the broad-band spectral properties of quasars out to high redshift.

  18. Nitrogen-doped graphene prepared by a transfer doping approach for the oxygen reduction reaction application

    Science.gov (United States)

    Mo, Zaiyong; Zheng, Ruiping; Peng, Hongliang; Liang, Huagen; Liao, Shijun

    2014-01-01

    Well defined nitrogen-doped graphene (NG) is prepared by a transfer doping approach, in which the graphene oxide (GO) is deoxidized and nitrogen doped by the vaporized polyaniline, and the GO is prepared by a thermal expansion method from graphite oxide. The content of doped nitrogen in the doped graphene is high up to 6.25 at% by the results of elements analysis, and oxygen content is lowered to 5.17 at%. As a non-precious metal cathode electrocatalyst, the NG catalyst exhibits excellent activity toward the oxygen reduction reaction, as well as excellent tolerance toward methanol. In 0.1 M KOH solution, its onset potential, half-wave potential and limiting current density for the oxygen reduction reaction reach 0.98 V (vs. RHE), 0.87 V (vs. RHE) and 5.38 mA cm-2, respectively, which are comparable to those of commercial 20 wt% Pt/C catalyst. The well defined graphene structure of the catalyst is revealed clearly by HRTEM and Raman spectra. It is suggested that the nitrogen-doping and large surface area of the NG sheets give the main contribution to the high ORR catalytic activity.

  19. Room temperature ferromagnetism in Co doped ZnO within an optimal doping level of 5%

    International Nuclear Information System (INIS)

    Mohapatra, J.; Mishra, D.K.; Mishra, Debabrata; Perumal, A.; Medicherla, V.R.R.; Phase, D.M.; Singh, S.K.

    2012-01-01

    Highlights: ► Zn 1−x Co x O ((0 ≤ x ≤ 0.1)) system synthesized by solid state reaction technique. ► Observation of room temperature ferromagnetism for 3 and 5% Co doped ZnO. ► XPS and EPMA studies predict the occurrence of segregated CoO clusters. ► Suppresses ferromagnetic ordering in higher doping percentage of Co (>5%). -- Abstract: We report on the structural, micro-structural and magnetic properties of Zn 1−x Co x O (0 ≤ x ≤ 0.1) system. Electron probe micro-structural analysis on 5% Co doped ZnO indicates the presence of segregated cobalt oxide which is also confirmed from the Co 2p core level X-ray photoelectron spectrum. The presence of oxygen defects in lower percentage of Co doped ZnO (≤5%) enhances the carrier mediated exchange interaction and thereby enhancing the room-temperature ferromagnetic behaviour. Higher doping percentage of cobalt (>5%) creates weak link between the grains and suppresses the carrier mediated exchange interaction. This is the reason why room temperature ferromagnetism is not observed in 7% and 10% Co doped ZnO.

  20. Preparation and properties of yttria doped tetragonal zirconia polycrystal/Sr-doped barium hexaferrite ceramic composites

    International Nuclear Information System (INIS)

    Wang, Shanshan; Zhang, Chao; Guo, Ruisong; Liu, Lan; Yang, Yuexia; Li, Kehang

    2015-01-01

    Highlights: • The 3Y-TZP/Sr-doped barium ferrite composites were prepared. • The saturation magnetization was improved by 15% with Sr-doping. • The dispersion coefficient p could reflect the microscopic lattice variation. • The composite with x = 0.5 had the maximum fracture toughness of 8.3 MPa m 1/2 . - Abstract: The effects of substitution of Ba 2+ by Sr 2+ on the magnetic property of barium ferrite and addition barium ferrite secondary phase to the 3 mol% yttria-doped tetragonal zirconia polycrystal (3Y-TZP) matrix on the mechanical property of composites were investigated. The Sr-doped barium ferrite (Ba 1−x Sr x Fe 12 O 19 , x = 0, 0.25, 0.50 and 0.75) was synthesized by solid-state reaction in advance. Then 3Y-TZP/20 wt% Sr-doped barium ferrite composites were prepared by means of conventional ceramic method. It was found that a moderate amount of Sr added to barium ferrite could boost the saturation magnetization by 15% compared with the composites without Sr-doping. Besides, the composite with x = 0.50 possessed the best mechanical properties, such as 11.5 GPa for Vickers hardness and 8.3 MPa m 1/2 for fracture toughness, respectively. It was demonstrated that magnetic and mechanical properties of the composites could be harmonized by the incorporation of barium ferrite secondary phase

  1. Confidentiality, disclosure and doping in sports medicine.

    Science.gov (United States)

    McNamee, M; Phillips, N

    2011-03-01

    The manner in which healthcare and medical professionals serve their athlete patients is governed by a variety of relevant codes of conduct. A range of codified rules is presented that refer both the welfare of the patient and the maintaining of confidentiality, which is at the heart of trustworthy relations. The 2009 version of the World Anti-Doping Code (WADC), however, appears to oblige all healthcare professionals not to assist athletes if they are known to be engaged in doping behaviours under fear of removal from working with athletes from the respective sports. In contrast, serving the best interests of their athlete patients may oblige healthcare professionals to give advice and guidance, not least in terms of harm minimisation. In so far as the professional conduct of a healthcare professional is guided both by professional code and World Anti-Doping Code, they are obliged to fall foul of one or the other. We call for urgent and pressing inter-professional dialogue with the World Anti-Doping Agency to clarify this situation.

  2. Control al doping Compromiso de Colombia

    Directory of Open Access Journals (Sweden)

    Claudia Prieto

    2015-06-01

    Full Text Available Este documento da a conocer la importante noticia de la aprobación, por parte del Comité Olímpico Internacional (COl, de un laboratorio colombiano, para el control al doping, a la vez que aprovecha la oportunidad para ampliar alguna información sobre este tema.

  3. Biological passport in the fight against doping

    Directory of Open Access Journals (Sweden)

    Mitja Ferlež

    2012-10-01

    for new ways of proving abuse of prohibited substances and methods. One of these is the strategy of long-term monitoring of biomarkers for identifying and sanctioning blood doping in athletes. This strategy is based on the assumption that doping will change values of biomarkers of the athlete that are otherwise kept in homeostasis. If we use a validated mathematical model, it is possible to determine whether the change in the values of biomarkers is due to doping or due to natural variations. Such a model is a biological passport, which enables the identification of the abnormal blood changes in biological indicators of the athlete. Since 2010 it has been possible to introduce sanctions against the athlete for breach of anti-doping rules based solely on an abnormal change of biomarkers. The introduction of the biological passport is a milestone in demonstrating drug abuse in sports, because it substantiates the abnormal deviations of biomarkers from the expected, although the cause of it remains unknown.

  4. Preparation of Polyaniline-Doped Fullerene Whiskers

    Directory of Open Access Journals (Sweden)

    Bingzhe Wang

    2013-01-01

    Full Text Available Fullerene C60 whiskers (FWs doped with polyaniline emeraldine base (PANI-EB were synthesized by mixing PANI-EB/N-methyl pyrrolidone (NMP colloid and FWs suspension based on the nature of the electron acceptor of C60 and electron donor of PANI-EB. Scanning electron microscopy (SEM, Fourier transform infrared (FT-IR, and ultraviolet-visible (UV-Vis spectra characterized the morphology and molecular structure of the FWs doped with PANI-EB. SEM observation showed that the smooth surface of FWs was changed to worm-like surface morphology after being doped with PANI-EB. The UV-Vis spectra suggested that charge-transfer (CT complex of C60 and PANI-EB was formed as PANI-EBδ+-C60δ-. PANI-EB-doped FWs might be useful as a new type of antibacterial and self-cleaning agent as well as multifunctional material to improve the human health and living environment.

  5. Doping assessment in GaAs nanowires

    DEFF Research Database (Denmark)

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  6. Elite Sport, Doping and Public Health

    DEFF Research Database (Denmark)

     aim of this book is toillustrate how the issue of doping has evolved beyond the world of elite sport into an arena of public health.  In so doing, the book drawsupon multi-disciplinary perspectives from applied and professionalethics, biomedical science, history, philosophy, policy studies, andsociology.  The essays, written by a...... group of leading international experts, is theproduct of a colloquium of the International Network of HumanisticDoping Research held at Aarhus University in Denmark.  Their scoperanges from conceptual analysis, case studies to policy critique.  Eachof these disciplinary perspectives, it is argued, is necessary to understand the problem of doping “in......The issue of doping in sport was once of interest only to aficionados of elite sports.  Nowadays, it is a matter of intense public scrutiny thatspans the worlds of health, medicine, sports, politics, technology, andbeyond.  In keeping with this territorial expansion, the...

  7. Boron-doped manganese dioxide for supercapacitors.

    Science.gov (United States)

    Chi, Hong Zhong; Li, Yuwei; Xin, Yingxu; Qin, Haiying

    2014-11-11

    The addition of boron as a dopant during the reaction between carbon fiber and permanganate led to significant enhancement of the growth-rate and formation of the porous framework. The doped MnO2 was superior to the pristine sample as electrode materials for supercapacitors in terms of the specific capacitance and rate capability.

  8. Characterization of Fe -doped silver phosphate glasses

    Indian Academy of Sciences (India)

    ... to their several spe- cial properties such as large thermal expansion coefficients, ... increase the conductivity of these glasses is to increase the modifier or dopant ... phosphate glasses were measured by the a.c. impedance spectroscopic .... and Fe2O3-doped Ag2O–P2O5 glasses were determined from. DSC curves and ...

  9. Gebruik en veiligheid van doping en sportvoedingssupplementen

    NARCIS (Netherlands)

    van den Berg SW; Venhuis BJ; Buurma EJM; Rompelberg CJM; L& G; V& Z

    2018-01-01

    In Nederland gebruiken weinig mensen doping en sportvoedingssupplementen. In 2016 gaf 0,5 procent van de Nederlanders van 15 jaar en ouder aan dat zij in het voorgaande jaar een prestatieverhogend middel hadden gebruikt. Naar schatting komt dat neer op 65.000 mensen. Dit blijkt uit onderzoek van het

  10. Structure and functionality of bromine doped graphite.

    Science.gov (United States)

    Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

    2013-04-28

    First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

  11. Thermoluminescence in some copper-doped compounds

    International Nuclear Information System (INIS)

    Patil, R.R.; Moharil, S.V.; Dhopte, S.M.; Muthal, P.L.; Kondawar, V.K.

    2003-01-01

    Thermoluminescence (TL) in various Cu + -doped materials is studied. A good correlation between the presence of copper in the Cu + form and TL sensitivity is observed. Correlation between TL emission spectra and photoluminescence suggests that Cu + acts as the emission center in the TL process. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Gene doping: the hype and the reality.

    Science.gov (United States)

    Wells, D J

    2008-06-01

    Some spectacular results from genetic manipulation of laboratory rodents and increasing developments in human gene therapy raise the spectre of genetic modification or 'gene doping' in sports. Candidate targets include the induction of muscle hypertrophy through overexpression of specific splice variants of insulin-like growth factor-1 or blockade of the action of myostatin, increasing oxygen delivery by raising the hematocrit through the use of erythropoietin, induction of angiogenesis with vascular endothelial growth factors or related molecules and changes in muscle phenotype through expression of peroxisome-proliferator-activated receptor- delta and associated molecules. Some of these potential genetic enhancements, particularly where the genetic modification and its action are confined to the muscles, may be undetectable using current tests. This had lead to exaggerated predictions that gene doping in athletics will be common within the next few years. However, a review of the methods of gene transfer and the current 'state of the art' in development of genetic treatments for human disease show that the prospects for gene doping remain essentially theoretical at present. Despite this conclusion, it will be important to continue to monitor improvements in the technology and to develop methods of detection, particularly those based on identifying patterns of changes in response to doping as opposed to the detection of specific agents.

  13. Polypyrrole Doped with Alkyl Benzene Sulphonates

    DEFF Research Database (Denmark)

    Bay, Lasse; Mogensen, Naja; Skaarup, Steen

    2002-01-01

    The properties of polypyrrole (PPy) are to a large extent determined by the condition of synthesis and especially by the counterion incorporated as dopant during synthesis. In this work, PPy doped with different alkyl benzenesulfonates are compared. The polymer films are prepared by constant curr...

  14. Non-intentional doping in sports.

    Science.gov (United States)

    Yonamine, Mauricio; Garcia, Paula Rodrigues; de Moraes Moreau, Regina Lúcia

    2004-01-01

    Compulsory drug testing was introduced in 1968 by the International Olympic Committee. Since then, several doping cases have been reported in sports competition world wide. Positive results are based on the detection of prohibited substances, their metabolites and markers in biological (mainly urine) samples supplied by athletes. In some cases, the evidences were not contested and athletes admitted the use of banned substances. However, in other cases, athletes denied the use of doping to enhance performance and claimed to have inadvertently or passively absorbed the drug. Unfortunately, no current accepted analytical method is capable of distinguishing between a sample from a cheater and one from an athlete who was passively exposed to a doping agent. Athletes' allegations have included the passive inhalation of drug smoke (e.g. marijuana) or the ingestion of food or products sold as nutritional supplements that contained prohibited substances. In the scientific literature, several studies have been performed to investigate the possibility of an accidental exposure being the reason for the appearance of detectable quantities of banned substances in urine samples. Based on these studies, this article discusses those cases where the athlete's claims could be possible in generating a positive result in doping control and in which circumstances it would be improbable to happen.

  15. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  16. Photo darkening of rare earth doped silica

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    2011-01-01

    /2/11/2 chemical bond is formed on dioxasilirane which comprises the PD color center for the visible and near-infrared. Difference in solid acidity of the silica material co-doped with Yb/Al and Yb/P may explain the observed difference in spectral shapes by change of bond order to the formed chemical bond. © 2011...

  17. Phosphorous Doping of Nanostructured Crystalline Silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Steckel, André

    Nano-textured silicon, known as black silicon (bSi), is attractive with excellent photon trapping properties. bSi can be produced using simple one-step fabrication reactive ion etching (RIE) technique. However, in order to use bSi in photovoltaics doping process should be developed. Due to high s...

  18. Doped spin ladders under magnetic field

    International Nuclear Information System (INIS)

    Roux, G.

    2007-07-01

    This thesis deals with the physics of doped two-leg ladders which are a quasi one-dimensional and unconventional superconductor. We particularly focus on the properties under magnetic field. Models for strongly correlated electrons on ladders are studied using exact diagonalization and density-matrix renormalization group (DMRG). Results are also enlightened by using the bosonization technique. Taking into account a ring exchange it highlights the relation between the pairing of holes and the spin gap. Its influence on the dynamics of the magnetic fluctuations is also tackled. Afterwards, these excitations are probed by the magnetic field by coupling it to the spin degree of freedom of the electrons through Zeeman effect. We show the existence of doping-dependent magnetization plateaus and also the presence of an inhomogeneous superconducting phase (FFLO phase) associated with an exceeding of the Pauli limit. When a flux passes through the ladder, the magnetic field couples to the charge degree of freedom of the electrons via orbital effect. The diamagnetic response of the doped ladder probes the commensurate phases of the t-J model at low J/t. Algebraic transverse current fluctuations are also found once the field is turned on. Lastly, we report numerical evidences of a molecular superfluid phase in the 3/2-spin attractive Hubbard model: at a density low enough, bound states of four fermions, called quartets, acquire dominant superfluid fluctuations. The observed competition between the superfluid and density fluctuations is connected to the physics of doped ladders. (author)

  19. Silver doped metal layers for medical applications

    International Nuclear Information System (INIS)

    Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

    2014-01-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  20. Synthesis, spectroscopy and simulation of doped nanocrystals

    NARCIS (Netherlands)

    Suyver, Jan Frederik

    2003-01-01

    This thesis deals with the properties of semiconductor nanocrystals (ZnS or ZnSe) in the size range (diameter) of 2 nm to 10 nm. The nanocrystals under investigation are doped with the transition metal ions manganese or copper. The goal is to study photoluminescence and electroluminescence from

  1. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  2. Perovskite-Perovskite Homojunctions via Compositional Doping.

    Science.gov (United States)

    Dänekamp, Benedikt; Müller, Christian; Sendner, Michael; Boix, Pablo P; Sessolo, Michele; Lovrincic, Robert; Bolink, Henk J

    2018-05-11

    One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite-perovskite homojunctions have not been reported. Here we present a perovskite-perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI 2 , obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is confirmed by infrared spectroscopy, which allows us to determine the MA content in the films. We analyzed the resulting thin-film junction by cross-sectional scanning Kelvin probe microscopy (SKPM) and found a contact potential difference (CPD) of 250 mV between the two differently doped perovskite layers. Planar diodes built with the perovskite-perovskite homojunction show the feasibility of our approach for implementation in devices.

  3. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

    2018-05-01

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  4. Harmonization of anti-doping rules in a global context (World Anti-Doping Agency-laboratory accreditation perspective).

    Science.gov (United States)

    Ivanova, Victoria; Miller, John H M; Rabin, Olivier; Squirrell, Alan; Westwood, Steven

    2012-07-01

    This article provides a review of the leading role of the World Anti-Doping Agency (WADA) in the context of the global fight against doping in sport and the harmonization of anti-doping rules worldwide through the implementation of the World Anti-Doping Program. Particular emphasis is given to the WADA-laboratory accreditation program, which is coordinated by the Science Department of WADA in conjunction with the Laboratory Expert Group, and the cooperation with the international accreditation community through International Laboratory Accreditation Cooperation and other organizations, all of which contribute to constant improvement of laboratory performance in the global fight against doping in sport. A perspective is provided of the means to refine the existing anti-doping rules and programs to ensure continuous improvement in order to face growing sophisticated challenges. A viewpoint on WADA's desire to embrace cooperation with other international organizations whose knowledge can contribute to the fight against doping in sport is acknowledged.

  5. [Medicolegal aspects of doping in sports].

    Science.gov (United States)

    Pruvost, J; Depiesse, F

    2004-08-01

    To investigate the medico-legal aspects of national and international procedures for monitoring prescription drug use by competing athletes. We studied the French law No. 99-223 of March 23, 1999, relating to the protection of the health of athletes? We also studied annual statistics from the Ministry of Sports concerning anti-doping controls, substances detected by the National Doping Control Laboratory and penalties applied since 2000, as well as the World Anti-Doping Code, which came into effect on January 1, 2004, and should be universally applied by 2006. Athletes registered with a federation or unregistered athletes taking part in competitions approved by sporting federations can use prescription drugs but must follow strict rules. Athletes under investigation for drug use must declare all drugs or products recently taken. The use of prescription drugs not on the list of the prohibited substances is allowed, but evidence of the use of such drugs is the responsibility of the prescriber. A medical practitioner in France who considers it essential to prescribe prohibited drugs or drugs under certain restrictions must systematically inform the athlete about the regulations by providing various certificates and forms. For international athletes, a form authorizing therapeutic use must be submitted to the validation committee of the applicable international federation. Disciplinary, ordinal and penal sanctions are also described. Prescription drug use by an athlete is never a light matter and always engages the responsibility of the doctor. Anti-doping controls and sanctions encourage physicians to comply scrupulously with the medico-legal rules set forth by the public health code and the world anti-doping code.

  6. Transformation from refractory anemia with excess of blasts (RAEB) into acute myeloid leukemia (AML) obserbed in a heavily exposed atomic bomb survivor

    Energy Technology Data Exchange (ETDEWEB)

    Iwato, Koji; Kawano, Michio; Kimura, Akiro; Kuramoto, Atsushi; Tanaka, Kimio; Kamada, Nanao

    1987-01-01

    A heavily exposed atomic bomb survivor, 59-year-old man presented refractory anemia with excess of blasts (RAEB) terminating in acute myeloid leukemia (AML) 38 years after exposure. When he manifested AML, combination chemotherapy was started. But complete remission was not obtained even by B-DOMP regimen. Cytogenetic studies were performed, and their relation to the clinical course was analyzed. Peripheral blood T lymphocytes had 41.9 % non-clonal chromosomal abnormalities suggesting over 400 rad exposure. Bone marrow cells at RAEB exhibited a presence of mosaic clones of normal and abnormal chromosomal pattern, which supported the clinical diagnosis of RAEB and corresponded to the clinical features such as steady state and a low percentage of myeloblasts. At transformation into AML, clonal chromosomal abnormality was seen in bone marrow cells. It may explain a rapid increase of abnormal cells. This abnormal clone showed a little different karyotype seen at RAEB. But it was suspected to derive from a clone at RAEB, because of the same persistent chromosomal abnormalities. Then it aquired an additional chromosomal abnormalities at clinically drug-resistant phase of AML. In vivo selection assay of these leukemic cells revealed that transforming gene took part in this leukemogenesis. These data shown in this paper contribute to investigate a mechanism of leukemogenesis in atomic bomb survivors and establishment of new therapy.

  7. Atmospheric concentrations, distributions and air-soil exchange tendencies of PAHs and PCBs in a heavily industrialized area in Kocaeli, Turkey.

    Science.gov (United States)

    Cetin, Banu; Yurdakul, Sema; Keles, Melek; Celik, Isil; Ozturk, Fatma; Dogan, Cevdet

    2017-09-01

    Dilovasi is one of the heavily industrialized areas in Turkey with serious environmental problems. In this study, the atmospheric concentration of PAHs and PCBs were measured for a whole year at 23 sites. The average ambient air Σ 15 PAH and Σ 41 PCB concentrations were found as 285 ± 431 ng m -3 and 4152 ± 6072 pg m -3 , respectively. PAH concentrations increased with decreasing temperature especially in urban areas, indicating the impact of residential heating. However, PCB concentrations mostly increased with temperature probably due to enhanced volatilization from their sources. The gradient obtained for PCBs, rural air were higher in industrial-urban areas than rural sites, showing that soil was a secondary source for PAHs. Fugacity ratios of PCBs were mostly <1.0 for the whole sampling period. Although the source/sink tendency of soil for some PCBs depends on their volatility, considering the whole data, PCBs were generally deposited to soil. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Two-Year Clinical Outcomes of Newer-Generation Drug-Eluting Stent Implantation Following Rotational Atherectomy for Heavily Calcified Lesions.

    Science.gov (United States)

    Jinnouchi, Hiroyuki; Kuramitsu, Shoichi; Shinozaki, Tomohiro; Kobayashi, Yohei; Hiromasa, Takashi; Morinaga, Takashi; Mazaki, Toru; Sakakura, Kenichi; Soga, Yoshimitsu; Hyodo, Makoto; Shirai, Shinichi; Ando, Kenji

    2015-01-01

    Clinical outcomes of implantation of the newer-generation drug-eluting stent (DES) following rotational atherectomy for heavily calcified lesions remain unclear in the real-world setting. We enrolled 252 consecutive patients (273 lesions) treated with newer-generation DES following rotational atherectomy. The primary endpoint was the cumulative 2-year incidence of major adverse cardiovascular events (MACE), defined as cardiac death, myocardial infarction, clinically-driven target lesion revascularization, and definite stent thrombosis. Complete clinical follow-up information at 2-year was obtained for all patients. The mean age was 73.2±9.0 years and 155 patients (61.5%) were male. Cumulative 2-year incidence of MACE (cardiac death, myocardial infarction, clinically-driven target lesion revascularization and definite stent thrombosis) was 20.3% (7.0%, 2.1%, 18.1% and 2.1%, respectively). Predictors of MACE were presenting with acute coronary syndrome (hazard ratio [HR]: 3.80, 95% confidence interval [CI]: 1.29-11.2, P=0.02), hemodialysis (HR: 1.93, 95% CI: 1.04-3.56, P=0.04) and previous coronary artery bypass graft (HR: 2.26, 95% CI: 1.02-5.00, P=0.045). PCI for calcified lesions requiring rotational atherectomy is still challenging even in the era of newer-generation DES.

  9. Transformation from refractory anemia with excess of blasts (RAEB) into acute myeloid leukemia (AML) obserbed in a heavily exposed atomic bomb survivor

    International Nuclear Information System (INIS)

    Iwato, Koji; Kawano, Michio; Kimura, Akiro; Kuramoto, Atsushi; Tanaka, Kimio; Kamada, Nanao

    1987-01-01

    A heavily exposed atomic bomb survivor, 59-year-old man presented refractory anemia with excess of blasts (RAEB) terminating in acute myeloid leukemia (AML) 38 years after exposure. When he manifested AML, combination chemotherapy was started. But complete remission was not obtained even by B-DOMP regimen. Cytogenetic studies were performed, and their relation to the clinical course was analyzed. Peripheral blood T lymphocytes had 41.9 % non-clonal chromosomal abnormalities suggesting over 400 rad exposure. Bone marrow cells at RAEB exhibited a presence of mosaic clones of normal and abnormal chromosomal pattern, which supported the clinical diagnosis of RAEB and corresponded to the clinical features such as steady state and a low percentage of myeloblasts. At transformation into AML, clonal chromosomal abnormality was seen in bone marrow cells. It may explain a rapid increase of abnormal cells. This abnormal clone showed a little different karyotype seen at RAEB. But it was suspected to derive from a clone at RAEB, because of the same persistent chromosomal abnormalities. Then it aquired an additional chromosomal abnormalities at clinically drug-resistant phase of AML. In vivo selection assay of these leukemic cells revealed that transforming gene took part in this leukemogenesis. These data shown in this paper contribute to investigate a mechanism of leukemogenesis in atomic bomb survivors and establishment of new therapy. (author)

  10. Recovery of ostracod with known ages in differently textured sediments and comparison of toxicity of heavily contaminated sediments with ostracod Heterocypris incongruens and amphipod Hyalella azteca

    Science.gov (United States)

    Stepanova, N. Yu; Nikitin, O. V.; Latypova, V. Z.; Vybornova, I. B.; Galieva, G. S.; Okunev, R. V.

    2018-01-01

    The recovery of 1-, 4-, 6,-, and 8-d-old ostracods (Heterocypris incongruens) from sediments with different texture has been evaluated. The recovery of ostracods at all ages has been in agreement with the acceptability criterion of 80% of survival for sediment tests. The recovery of ostracods has turned out to be equal to or more than 80% for sand and silt sediments, respectively. The comparison of survival rates between ostracods and amphipods has shown good convergence in the tests of heavily contaminated sediments (R2=0.75, pquality criteria (TEC) have been exceeded mostly for total petroleum hydrocarbons (100% samples), Cr (100%), Ni (87%), Cu (87%), Pb (47%), and Cd (53%). The content of acid volatile sulfides (AVS) has been significantly higher than that of simultaneously extracted metals (SEM). The obtained results have indicated that, metals (Cu, Zn, Cd, Ni, and Pb) are non-bioavailable. Only one sample has exceeded TEC for PAHs (dibenz[a,h]anthracene). It was observed that, no significant correlation between the effect of toxicity and the chemical content.

  11. The WIRED Survey. I. A Bright IR Excess Due to Dust Around the Heavily Polluted White Dwarf Galex J193156.8+011745

    Science.gov (United States)

    Debes, John H.; Hoard, D. W.; Kilic, Mukremin; Wachter, Stefanie; Leisawitz, David T.; Cohen, Martin; Kirkpatrick, J. Davy; Griffith, Roger L.

    2011-01-01

    With the launch of the Wide-Field Infrared Survey Explorer (WISE), a new era of detecting planetary debris around white dwarfs (WDs) has begun with the WISE InfraRed Excesses around Degenerates (WIRED) Survey. The WIRED survey will be sensitive to substellar objects and dusty debris around WDs out to distances exceeding 100 pc, well beyond the completeness level of local WDs and covering a large fraction of known WDs detected with the SDSS DR4 WD catalog. In this paper, we report an initial result of the WIRED survey, the detection of the heavily polluted hydrogen WD (spectral type DAZ) GALEX Jl93156.S-KlI1745 at 3.35 and 4.6/Lm. We find that the excess is consistent with either a narrow dusty ring with an inner radius of 29 RWD. outer radius of 40 RWD, and a face-on inclination, or a disk with an inclination of 70 , an inner radius of 23 RWD. and an outer radius of 80 RWD. We also report initial optical spectroscopic monitoring of several metal lines present in the photosphere and find no variability in the line strengths or radial velocities of the lines. We rule out all but planetary mass companions to GALEXl931 out to 0.5 AU.

  12. Studies on the immune response to fixed antigens. Preferential induction of helper function with heavily trinitrophenylated sheep erythrocytes, and glutaraldehyde-treated sheep erythrocytes

    International Nuclear Information System (INIS)

    Kahan, M.; Berman-Goldman, R.; Saltoun, R.; Naor, D.

    1976-01-01

    Mice primed with heavily trinitrophenylated sheep red cells (TNP 128 SRC) or glutaraldehyde-treated sheep red cells (G-SRC) developed an early helper function mediated by thymus-derived cells. Such mice were able to produce high secondary responses to both hapten and carrier after challenge 2 days after priming, with lightly trinitrophenylated SRC (TNP 0 . 14 SRC). However, the primary response of the TNP 128 SRC or G-SRC-primed mice were very low to undetectable, and their secondary responses were also low when the challenge antigen was administered 4 days after priming or later. Inhibitory humoral factor(s) which were induced in the primed animals appeared responsible for the decreased capacity of primed mice to mount a secondary response when challenged later than 2 days after priming. Transfer of spleen cells from TNP 128 SRC-primed mice to sublethally irradiated recipients circumvents their exposure to inhibitory humoral factor(s) present in intact animals allowing them to react with challenge antigen. Enriched populations of T cells, but not B cells, were able to transfer this early immunologic memory to irradiated recipients. The theoretical and practical implications of these results are discussed

  13. Heavy Metal Pollution in Settled Dust Associated with Different Urban Functional Areas in a Heavily Air-Polluted City in North China

    Science.gov (United States)

    Wan, Dejun; Han, Zhangxiong; Yang, Jinsong; Yang, Guanglin; Liu, Xingqi

    2016-01-01

    Understanding variations of heavy metals in atmospheric particles between different functional areas is significant for pollution control and urban planning in cities. To reveal pollution and spatial distribution of heavy metals in atmospheric particles from different urban functional areas in Shijiazhuang in North China, 43 settled dust samples were collected over the main urban area and heavy metal concentrations were determined in their pollution indexes (IPIs) of the ten heavy metals are 2.7–13.6 (5.7 ± 2.2), suggesting high or very high pollution levels of most dust. Relatively lower IPIs occur mainly in the administration-education area, the commercial area, and other unclassified sites; while peaks occur mainly in the North Railway Station, the northeastern industrial area, and some sites near heavily trafficked areas, implying the significant influence of intensive industrial (including coal combustion) and traffic activities on atmospheric heavy metal accumulation. These results suggest a clear need of mitigating atmospheric heavy metal pollution via controlling emissions of toxic metals (especially Cd and Pb) from industrial and traffic sources in the city. PMID:27834903

  14. Distributions, sources and pollution status of 17 trace metal/metalloids in the street dust of a heavily industrialized city of central China

    International Nuclear Information System (INIS)

    Li, Zhonggen; Feng, Xinbin; Li, Guanghui; Bi, Xiangyang; Zhu, Jianming; Qin, Haibo; Dai, Zhihui; Liu, Jinling; Li, Qiuhua; Sun, Guangyi

    2013-01-01

    A series of representative street dust samples were collected from a heavily industrialized city, Zhuzhou, in central China, with the aim to investigate the spatial distribution and pollution status of 17 trace metal/metalloid elements. Concentrations of twelve elements (Pb, Zn, Cu, Cd, Hg, As, Sb, In, Bi, Tl, Ag and Ga) were distinctly amplified by atmospheric deposition resulting from a large scale Pb/Zn smelter located in the northwest fringe of the city, and followed a declining trend towards the city center. Three metals (W, Mo and Co) were enriched in samples very close to a hard alloy manufacturing plant, while Ni and Cr appeared to derive predominantly from natural sources. Other industries and traffic had neglectable effects on the accumulation of observed elements. Cd, In, Zn, Ag and Pb were the five metal/metalloids with highest pollution levels and the northwestern part of city is especially affected by heavy metal pollution. -- Highlights: •Large-scale Pb/Zn smelters contributed to elevated trace elements in the street dust. •The hard alloy processing caused the enrichment of a few elements. •Cd, In, Zn, Ag and Pb were the most polluted elements. •Northwestern Zhuzhou suffered severe contamination for a range of trace elements. -- Pb/Zn smelting and hard alloy processing operations have caused seriously contamination of trace metal/metalloids in the street dust

  15. Bevacizumab Demonstrates Prolonged Disease Stabilization in Patients with Heavily Pretreated Metastatic Renal Cell Carcinoma: A Case Series and Review of the Literature

    Directory of Open Access Journals (Sweden)

    Nicole M. Agostino

    2010-01-01

    Full Text Available There are now a variety of therapies approved for the treatment of metastatic renal cell carcinoma (RCC. These include the immunotherapeutics, alfa-interferon, and interleukin-2, and agents that target the vascular endothelial growth factor receptor (VEGFR via its tyrosine kinase, such as sorafenib, sunitinib, and pazopanib, or the mammalian target of rapamycin (mTOR, such as temsirolimus and everolimus. Bevacizumab, a monoclonal antibody directed against the ligand, VEGF, has shown activity against RCC as a single agent in patients who had failed prior cytokine therapy and as first line therapy in combination with interferon. The activity of bevacizumab in patients who had received and failed prior therapy has not been described. We report our experience in 4 patients with metastatic RCC who had failed prior cytokine, TKI, and mTOR inhibitors who were treated with bevacizumab as single agent therapy. These heavily pretreated patients sustained very prolonged periods of stable disease (median of 12 months with very little toxicity and excellent quality of life. The activity of this agent in patients who had failed prior therapies directed against the VEGFR and mTOR suggests that therapy targeting the ligand, VEGF, is still a viable approach in these patients and deserves further study.

  16. Distributions, sources and pollution status of 17 trace metal/metalloids in the street dust of a heavily industrialized city of central China.

    Science.gov (United States)

    Li, Zhonggen; Feng, Xinbin; Li, Guanghui; Bi, Xiangyang; Zhu, Jianming; Qin, Haibo; Dai, Zhihui; Liu, Jinling; Li, Qiuhua; Sun, Guangyi

    2013-11-01

    A series of representative street dust samples were collected from a heavily industrialized city, Zhuzhou, in central China, with the aim to investigate the spatial distribution and pollution status of 17 trace metal/metalloid elements. Concentrations of twelve elements (Pb, Zn, Cu, Cd, Hg, As, Sb, In, Bi, Tl, Ag and Ga) were distinctly amplified by atmospheric deposition resulting from a large scale Pb/Zn smelter located in the northwest fringe of the city, and followed a declining trend towards the city center. Three metals (W, Mo and Co) were enriched in samples very close to a hard alloy manufacturing plant, while Ni and Cr appeared to derive predominantly from natural sources. Other industries and traffic had neglectable effects on the accumulation of observed elements. Cd, In, Zn, Ag and Pb were the five metal/metalloids with highest pollution levels and the northwestern part of city is especially affected by heavy metal pollution. Copyright © 2013 Elsevier Ltd. All rights reserved.

  17. Heavy Metal Pollution in Settled Dust Associated with Different Urban Functional Areas in a Heavily Air-Polluted City in North China.

    Science.gov (United States)

    Wan, Dejun; Han, Zhangxiong; Yang, Jinsong; Yang, Guanglin; Liu, Xingqi

    2016-11-10

    Understanding variations of heavy metals in atmospheric particles between different functional areas is significant for pollution control and urban planning in cities. To reveal pollution and spatial distribution of heavy metals in atmospheric particles from different urban functional areas in Shijiazhuang in North China, 43 settled dust samples were collected over the main urban area and heavy metal concentrations were determined in their pollution indexes (IPIs) of the ten heavy metals are 2.7-13.6 (5.7 ± 2.2), suggesting high or very high pollution levels of most dust. Relatively lower IPIs occur mainly in the administration-education area, the commercial area, and other unclassified sites; while peaks occur mainly in the North Railway Station, the northeastern industrial area, and some sites near heavily trafficked areas, implying the significant influence of intensive industrial (including coal combustion) and traffic activities on atmospheric heavy metal accumulation. These results suggest a clear need of mitigating atmospheric heavy metal pollution via controlling emissions of toxic metals (especially Cd and Pb) from industrial and traffic sources in the city.

  18. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  19. First-principles study of doping effect on the phase transition of zinc oxide with transition metal doped

    International Nuclear Information System (INIS)

    Wu, Liang; Hou, Tingjun; Wang, Yi; Zhao, Yanfei; Guo, Zhenyu; Li, Youyong; Lee, Shuit-Tong

    2012-01-01

    Highlights: ► We study the doping effect on B4, B1 structures and phase transition of ZnO. ► We calculate the phase transition barrier and phase transition path of doped ZnO. ► The transition metal doping decreases the bulk modulus and phase transition pressure. ► The magnetic properties are influenced by the phase transition process. - Abstract: Zinc oxide (ZnO) is a promising material for its wide application in solid-state devices. With the pressure raised from an ambient condition, ZnO transforms from fourfold wurtzite (B4) to sixfold coordinated rocksalt (B1) structure. Doping is an efficient approach to improve the structures and properties of materials. Here we use density-functional theory (DFT) to study doped ZnO and find that the transition pressure from B4 phase to B1 phase of ZnO always decreases with different types of transition metal (V, Cr, Mn, Fe, Co, or Ni) doped, but the phase transition path is not affected by doping. This is consistent with the available experimental results for Mn-doped ZnO and Co-doped ZnO. Doping in ZnO causes the lattice distortion, which leads to the decrease of the bulk modulus and accelerates the phase transition. Mn-doped ZnO shows the strongest magnetic moment due to its half filled d orbital. For V-doped ZnO and Cr-doped ZnO, the magnetism is enhanced by phase transition from B4 to B1. But for Mn-doped ZnO, Fe-doped ZnO, Co-doped ZnO, and Ni-doped ZnO, B1 phase shows weaker magnetic moment than B4 phase. These results can be explained by the amount of charge transferred from the doped atom to O atom. Our results provide a theoretical basis for the doping approach to change the structures and properties of ZnO.

  20. The world anti-doping code : a South African perspective : research ...

    African Journals Online (AJOL)

    During February 2003 the World Anti-Doping Agency adopted the World-Anti Doping Code in Copenhagen in an effort to create and independent anti-doping body and to co-ordinate the harmonisation of doping regulations. The Code encompasses the principles around which the anti-doping effort in sport will revolve in ...

  1. Hydrogen storage capacity of lithium-doped KOH activated carbons

    International Nuclear Information System (INIS)

    Minoda, Ai; Oshima, Shinji; Iki, Hideshi; Akiba, Etsuo

    2014-01-01

    Highlights: • The hydrogen adsorption of lithium-doped KOH activated carbons has been studied. • Lithium doping improves their hydrogen adsorption affinity. • Lithium doping is more effective for materials with micropores of 0.8 nm or smaller. • Lithium reagent can alter the pore structure, depending on the raw material. • Optimizing the pore size and functional group is needed for better hydrogen uptake. - Abstract: The authors have studied the hydrogen adsorption performance of several types of lithium-doped KOH activated carbons. In the case of activated cokes, lithium doping improves their hydrogen adsorption affinity from 5.02 kg/m 3 to 5.86 kg/m 3 at 303 K. Hydrogen adsorption density increases by around 17% after lithium doping, likely due to the fact that lithium doping is more effective for materials with micropores of 0.8 nm or smaller. The effects of lithium on hydrogen storage capacity vary depending on the raw material, because the lithium reagent can react with the material and alter the pore structure, indicating that lithium doping has the effect of plugging or filling the micropores and changing the structures of functional groups, resulting in the formation of mesopores. Despite an observed decrease in hydrogen uptake, lithium doping was found to improve hydrogen adsorption affinity. Lithium doping increases hydrogen uptake by optimizing the pore size and functional group composition

  2. Review on dielectric properties of rare earth doped barium titanate

    International Nuclear Information System (INIS)

    Ismail, Fatin Adila; Osman, Rozana Aina Maulat; Idris, Mohd Sobri

    2016-01-01

    Rare earth doped Barium Titanate (BaTiO_3) were studied due to high permittivity, excellent electrical properties and have wide usage in various applications. This paper reviewed on the electrical properties of RE doped BaTiO_3 (RE: Lanthanum (La), Erbium (Er), Samarium (Sm), Neodymium (Nd), Cerium (Ce)), processing method, phase transition occurred and solid solution range for complete study. Most of the RE doped BaTiO_3 downshifted the Curie temperature (T_C). Transition temperature also known as Curie temperature, T_C where the ceramics had a transition from ferroelectric to a paraelectric phase. In this review, the dielectric constant of La-doped BaTiO_3, Er-doped BaTiO_3, Sm-doped BaTiO_3, Nd-doped BaTiO_3 and Ce-doped BaTiO_3 had been proved to increase and the transition temperature or also known as T_C also lowered down to room temperature as for all the RE doped BaTiO_3 except for Er-doped BaTiO_3.

  3. Carbon doped ZnO: Synthesis, characterization and interpretation

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

    2013-01-01

    A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

  4. Optical characterization of Pr3+-doped yttria-stabilized zirconia single crystals

    International Nuclear Information System (INIS)

    Savoini, B.; Munoz Santiuste, J.E.; Gonzalez, R.

    1997-01-01

    The optical absorption and fluorescence of Pr 3+ ions in yttria-stabilized zirconia single crystals are investigated. Fluorescence emissions from the 1 D 2 level are clearly dominant and low intensity emission lines from the 3 P 0 and 1 G 4 states are also observed. Analysis with the Judd-Ofelt theory of the absorption intensities has been made assuming that only ∼40% of the praseodymium ions contribute to the optical absorption bands. Quantum efficiency values of η( 3 P 0 )∼0.2 and η( 1 D 2 )∼ 1 are obtained at room temperature. 1 D 2 fluorescence quenching has been observed in heavily-doped samples due to cross relaxation processes among neighboring Pr 3+ ions. Analysis using the Inokuti-Hirayama model shows that electric dipole-dipole interactions are mainly responsible for the quenching effect. Pr 3+ ions are present in seven and sixfold configurations with a statistical distribution. The energy position of the 4f5d configuration is very different for each center. The fluorescence dynamics is explained by a mechanism involving thermally assisted population of the 3 P 1,2 + 1 I 6 upper levels and fast relaxation to the 1 D 2 level via states of the excited 4f5d configuration. copyright 1997 The American Physical Society

  5. Attitudes and doping: a structural equation analysis of the relationship between athletes' attitudes, sport orientation and doping behaviour

    Directory of Open Access Journals (Sweden)

    Petróczi Andrea

    2007-11-01

    Full Text Available Abstract Background For effective deterrence methods, individual, systemic and situational factors that make an athlete or athlete group more susceptible to doping than others should be fully investigated. Traditional behavioural models assume that the behaviour in question is the ultimate end. However, growing evidence suggests that in doping situations, the doping behaviour is not the end but a means to an end, which is gaining competitive advantage. Therefore, models of doping should include and anti-doping policies should consider attitudes or orientations toward the specific target end, in addition to the attitude toward the 'tool' itself. Objectives The aim of this study was to empirically test doping related dispositions and attitudes of competitive athletes with the view of informing anti-doping policy developments and deterrence methods. To this end, the paper focused on the individual element of the drug availability – athlete's personality – situation triangle. Methods Data were collected by questionnaires containing a battery of psychological tests among competitive US male college athletes (n = 199. Outcome measures included sport orientation (win and goal orientation and competitiveness, doping attitude, beliefs and self-reported past or current use of doping. A structural equation model was developed based on the strength of relationships between these outcome measures. Results Whilst the doping model showed satisfactory fit, the results suggested that athletes' win and goal orientation and competitiveness do not play a statistically significant role in doping behaviour, but win orientation has an effect on doping attitude. The SEM analysis provided empirical evidence that sport orientation and doping behaviour is not directly related. Conclusion The considerable proportion of doping behaviour unexplained by the model suggests that other factors play an influential role in athletes' decisions regarding prohibited methods

  6. Integrative taxonomy of the ornamental 'peppermint' shrimp public market and population genetics of Lysmata boggessi, the most heavily traded species worldwide.

    Science.gov (United States)

    Baeza, J Antonio; Behringer, Donald C

    2017-01-01

    The ornamental trade is a worldwide industry worth >15 billion USD with a problem of rampant product misidentification. Minimizing misidentification is critical in the face of overexploitation of species in the trade. We surveyed the peppermint shrimp ornamental marketplace in the southeastern USA, the most intense market for peppermint shrimps worldwide, to characterize the composition of species in the trade, reveal the extent of misidentification, and describe the population genetics of the true target species. Shrimps were bought from aquarium shops in FL, GA, SC, and NC. We demonstrated, contrary to popular belief (information from dealers), that the most heavily traded species in the market was Lysmata boggessi , an endemic species to the eastern Gulf of Mexico, and not Lysmata wurdemanni . Importantly, only when color pattern or genetic markers in conjunction with morphological traits were employed, was it was possible to unequivocally identify L. boggessi as the only species in the trade. The intensity of the market for peppermint shrimps in the USA has led to L. boggessi being the most traded species worldwide. Misidentification in the shrimp aquarium trade is accidental and involuntary, and is explained by remarkable similarity among congeneric species. Using sequences of the 16S-mt-DNA marker, we found no indication of population genetic structure in the endemic L. boggessi across  550 km of linear coast. Therefore, this species can be considered genetically homogeneous and a single fished stock. Still, we argue in favor of additional studies using more powerful markers (e.g., SNPs) capable of revealing genetic structure at a finer spatial-scale. Our results will help advance management and conservation policies in this lucrative yet understudied fishery. Future studies of other ornamental fisheries will benefit from using an integrative taxonomic approach, as we demonstrate here.

  7. Real versus virtual phenotype to guide treatment in heavily pretreated patients: 48-week follow-up of the Genotipo-Fenotipo di Resistenza (GenPheRex) trial.

    Science.gov (United States)

    Mazzotta, Francesco; Lo Caputo, Sergio; Torti, Carlo; Tinelli, Carmine; Pierotti, Piera; Castelli, Francesco; Lazzarin, Adriano; Angarano, Gioacchino; Maserati, Renato; Gianotti, Nicola; Ladisa, Nicoletta; Quiros-Roldan, Eugenia; Rinehart, Alex R; Carosi, Giampiero

    2003-03-01

    We compared viroimmunologic response after real phenotype (r-PHT) versus virtual phenotype (v-PHT) in patients failing highly active antiretroviral therapy (HAART). A total of 201 patients with >2 years of exposure, more than six experienced drugs, >1000 HIV RNA copies/mL, and on stable HAART for >6 months were randomized to the r-PHT or v-PHT arm. The primary end point was the proportion of HIV plasma viral load (pVL) 0.5 log(10) copies/mL, and absolute CD4 cell change. In the intention-to-treat-last observation carried forward analysis, study outcomes were not significantly different between arms over 48 weeks of follow-up: 20% and 24% pVL 0.5 log(10) copies/mL; -0.92 and -0.94(10) log copies/mL mean pVL decrease; and +41.6 and +94.4 cells/mm(3) mean absolute CD4 increase in the r-PHT and v-PHT arms, respectively. On-treatment analyses gave similar results. In the multivariate analysis of pVL <400 copies/mL, the following covariates were independent predictors at week 48: adherence (OR p= 0.25; p=.002), baseline CD4 (OR = 4.39; p=.007), intravenous drug use as risk factor for HIV acquisition (OR = 0.33; p=.024), and sensitivity score of the new regimens by biologic cut-offs (OR = 1.84; p=.029). Prescribed drugs for which patients were naive resulted in marginal prediction (OR = 1.93; p=.054). In conclusion, virologic and immunologic outcomes did not differ when r-PHT or v-PHT was used in this cohort of heavily pretreated patients. Several factors should be considered to take better advantage of resistance testing, including treatment history, clinical status, and patients' ability to adhere to treatment.

  8. Liming with powdered oil-shale ash in a heavily damaged forest ecosystem. 2.The effect on forest condition in a pine stand

    International Nuclear Information System (INIS)

    Terasmaa, T.; Pikk, J.

    1995-01-01

    First years after the treatment (in 1987) of forest soil with mineral fertilizers and powdered oil-shale ash in a heavily damaged 50-year-old Scots pine ecosystem showed a comparatively small effect (B<0.95) of liming on the stand characters. However, in comparison with the effect of only NPK fertilization on the volume growth and the health state of trees, liming (NPK+oil-shale ash) tended to increase the positive influence of fertilizers. Under the influence of oil-shale ash the mortality of the trees was lower, the density of the stand rose more, and the mean radial increment of trees was by 26% greater than after the NPK treatment without a lime agent. On the whole, the effect of oil-shale ash liming on the growth and health condition of the pine stand was not high. However, the first results of its experimental use on mineral forest soil cannot serve as the basis for essential conclusions. Still, the results give us some assurance to continue our experimental work with powdered oil-shale ash in forests with the purpose of regulating the high acidity of forest soils in some sites to gain positive shifts in the forest life. Taking into account the low price of the powdered oil-shale ash and the plentiful resources of this liming material in Estonia, even a small trend towards an improvement of forest condition on poor sandy soils would be a satisfactory final result of the work. It is essential to note that oil-shale ash is not only a simple liming material, but also a lime fertilizer consisting of numerous chemical elements necessary for plant growth. 2 tabs., 3 figs., 18 refs

  9. Soil concentrations and source apportionment of polybrominated diphenyl ethers (PBDEs) and trace elements around a heavily industrialized area in Kocaeli, Turkey.

    Science.gov (United States)

    Cetin, Banu

    2014-01-01

    Air pollutants are transported by dry deposition, wet deposition, and gas exchange accumulated in soil. Therefore, soil is an important environmental medium reflecting the level and the spatial distribution of air pollutants such as polybrominated diphenyl ethers (PBDEs) and heavy metals. Soil concentrations of seven PBDE congeners and 21 trace elements were determined in a heavily industrialized region (Dilovasi) in Kocaeli, Turkey. At all sites, Σ7PBDE concentrations ranged from 0.70 to 203 with a mean value of 26.3 μg kg(-1) (dry weight). The congener profiles and mass inventories of PBDEs and their interactions with soil organic matter (SOM) were also investigated. BDE-209 was the dominant congener at all sites, followed by BDE-99 and/or -47. The estimated inventory of PBDEs for the Dilovasi district was 310 kg. However, there are several additional industrial regions in Kocaeli city. Considering the total land area, the potential inventory would be much larger for this city. The relationship between the PBDE concentrations in soil and SOM content indicated that factors other than soil properties have a greater influence on soil concentrations. Crustal enrichment factors (EFs) were determined; correlation analysis and factor analysis (FA) were also applied to generated data set to identify and apportion the sources polluting the soil. Sn, Mn, Ca, As, Zn, Pb, and Cd had significantly high average EF values, indicating that their soil concentrations were mainly influenced by anthropogenic activities. In FA, six factors were extracted with a cumulative variance of 84.4 % and industrial activities and traffic were found to be the main factors affecting the soil profile.

  10. The robustness of two tomography reconstructing techniques with heavily noisy dynamical experimental data from a high speed gamma-ray tomograph

    International Nuclear Information System (INIS)

    Vasconcelos, Geovane Vitor; Melo, Silvio de Barros; Dantas, Carlos Costa; Moreira, Icaro Malta; Johansen, Geira; Maad, Rachid

    2013-01-01

    The PSIRT (Particle Systems Iterative Reconstructive Technique) is, just like the ART method, an iterative tomographic reconstruction technique with the recommended use in the reconstruction of catalytic density distribution in the refining process of oil in the FCC-type riser. The PSIRT is based upon computer graphics' particle systems, where the reconstructing material is initially represented as composed of particles subject to a force field emanating from the beams, whose intensities are parameterized by the differences between the experimental readings of a given beam trajectory, and the values corresponding to the current amount of particles landed in this trajectory. A dynamical process is set as the beams fields of attracting forces dispute the particles. At the end, with the equilibrium established, the particles are replaced by the corresponding regions of pixels. The High Speed Gamma-ray Tomograph is a 5-source-fan-beam device with a 17-detector deck per source, capable of producing up to a thousand complete sinograms per second. Around 70.000 experimental sinograms from this tomograph were produced simulating the move of gas bubbles in different angular speeds immersed in oil within the vessel, through the use of a two-hole-polypropylene phantom. The sinogram frames were set with several different detector integration times. This article studies and compares the robustness of both ART and PSIRT methods in this heavily noisy scenario, where this noise comes not only from limitations in the dynamical sampling, but also from to the underlying apparatus that produces the counting in the tomograph. These experiments suggest that PSIRT is a more robust method than ART for noisy data. Visual inspection on the resulting images suggests that PSIRT is a more robust method than ART for noisy data, since it almost never presents globally scattered noise. (author)

  11. Efficacy and tolerability of high dose "ethinylestradiol" in post-menopausal advanced breast cancer patients heavily pre-treated with endocrine agents.

    Science.gov (United States)

    Agrawal, Amit; Robertson, John F R; Cheung, K L

    2006-07-11

    High dose estrogens (HDEs) were frequently used as endocrine agents prior to the introduction of tamoxifen which carries fewer side effects. Due to the development of resistance to available endocrine agents in almost all women with metastatic breast cancer, interest has renewed in the use of HDEs as yet another endocrine option that may have activity. We report our experience with one of the HDEs ("ethinylestradiol" 1 mg daily) in advanced breast cancer (locally advanced and metastatic) in post-menopausal women who had progressed on multiple endocrine agents. According to a database of advanced breast cancer patients seen in our Unit since 1998, those who had complete set of information and fulfilled the following criteria were studied: (1) patients in whom further endocrine therapy was deemed appropriate i.e., patients who have had clinical benefit with previous endocrine agents or were not fit or unwilling to receive chemotherapy in the presence of potentially life-threatening visceral metastases; (2) disease was assessable by UICC criteria; (3) were treated with "ethinylestradiol" until they were withdrawn from treatment due to adverse events or disease progression. Twelve patients with a median age of 75.1 years (49.1-85 years) were identified. Majority (N = 8) had bony disease. They had ethinylestradiol as 3rd to 7th line endocrine therapy. One patient (8%) came off treatment early due to hepato-renal syndrome. Clinical benefit (objective response or durable stable disease for > or = 6 months) was seen in 4 patients (33.3%) with a median duration of response of 10+ (7-36) months. The time to treatment failure was 4 (0.5-36) months. Yet unreported, high dose "ethinylestradiol" is another viable therapeutic strategy in heavily pre-treated patients when further endocrine therapy is deemed appropriate. Although it tends to carry more side effects, they may not be comparable to those of other HDEs (such as diethylstilbestrol) or chemotherapy.

  12. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    International Nuclear Information System (INIS)

    Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka

    2014-01-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)

  13. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles.

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  14. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  15. Doping dependence of charge order in electron-doped cuprate superconductors

    Science.gov (United States)

    Mou, Yingping; Feng, Shiping

    2017-12-01

    In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

  16. DOPING CONTROL AND LIABILITY FOR THE USE OF DOPING IN SPORT

    Directory of Open Access Journals (Sweden)

    Lyudmila Aleksandrovna Kiryanova

    2017-10-01

    Full Text Available Purpose. The article is devoted to the use by athletes of different performance enhancing drugs and banned anabolic steroids to enhance athletic performance. Authors aim to justify the improvement of the Russian legislation and anti-doping education. Methodology. The study constitutes an analysis of the legal documents of international standards and Russian legislation, the formulation of the concept of “doping”, the definition of the role of WADA in the development of anti-doping information and education programs for young generation of athletes. The authors identified pedagogical and organizational issues of the fight against doping in sport. Results. The studies found that an important thing of educational work is the pedagogical aspect. The authors have developed anti-doping activities that are recommended for use in the system of youth sports and education in the universities of physical culture. Practical implications. The results of the study are recommended for use in educational techniques anti-doping character in the sphere of physical culture and sports.

  17. Electronic Raman response in electron-doped cuprate superconductors

    International Nuclear Information System (INIS)

    Geng Zhihao; Feng Shiping

    2012-01-01

    The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B 2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B 2g channel and a linear response in the B 2g channel for the electron-doped case in the low energy limit. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.

  18. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  19. FLUX PINNING EFFECTS IN Ag-DOPED YBCO (123 SUPERCONDUCTOR

    Directory of Open Access Journals (Sweden)

    Madelen Pérez

    2010-07-01

    Full Text Available Polycrystalline samples of Ag+-doped YBCO (123 (YBa2 (Cu1-xAgx3O7-δwith 0≤x≤0.3 were produced by solid state reaction method. The Ag- doped YBCO samples showed higher critical current densities (Jc with a Jc maximum for samples doped with x=0.05. This behavior can be assigned to an increase of pinning forces. The irreversibility temperature (Tirr, also increased in doped samples as a function of Ag content, with the highest temperature for the sample doped with x=0.05, wich correlates well with the observed Jc increasing. However, samples doped with x>0.05 displayed a decreasing of electrical properties (less Tirr, less Jc, etc. atributed to an excess of Ag in the grain boundaries which, reduces the grain sizes and increases the number of weak- links.

  20. The fight against fitness doping in sports clubs

    DEFF Research Database (Denmark)

    Thualagant, Nicole; Pfister, Gertrud Ursula

    2012-01-01

    This article focuses on the anti-doping policies led in Danish fitness centers in a sport for all context. Fitness, an ever growing training form is gaining in popularity and has in this context been adopted as a training activity by DGI, one of the leading sports for all organization in Denmark....... As a result of this gain in popularity, fitness activities are not only offered in commercial fitness centers but also in fitness centers attached to sport for all clubs. This development has emancipated a focus on doping and thereby in the establishing of anti-doping policies in sport for all clubs. Denmark...... is one of the few countries who illegalizes doping in fitness centers and who tests its members for doping. This article contributes with a discussion concerning the challenges, DGI, as a sport for all organization encounters in relation to the anti-doping policies and its objectives of fostering health...