WorldWideScience

Sample records for hard silicon strips

  1. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  2. 3D silicon strip detectors

    International Nuclear Information System (INIS)

    Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

    2009-01-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

  3. 3D silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2009-06-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

  4. Radiation Hard GaNFET High Voltage Multiplexing (HV Mux) for the ATLAS Upgrade Silicon Strip Tracker

    CERN Document Server

    Lynn, David; The ATLAS collaboration

    2017-01-01

    The outer radii of the inner tracker (ITk) for the Phase-II Upgrade of the ATLAS experiment will consist of groups of silicon strip sensors mounted on common support structures. Lack of space creates a need to remotely disable a failing sensor from the common HV bus. We have developed circuitry consisting of a GaNFET transistor and a HV Multiplier circuit to disable a failed sensor. We will present two variants of the HV Mux circuitry and show irradiation results on individual components with an emphasis on the GaNFET results. We will also discuss the reliability of the HV Mux circuitry and show plans to ensure reliability during production.

  5. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

    1999-01-01

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  6. CMS Silicon Strip Tracker Performance

    CERN Document Server

    Agram, Jean-Laurent

    2012-01-01

    The CMS Silicon Strip Tracker (SST), consisting of 9.6 million readout channels from 15148 modules and covering an area of 198 square meters, needs to be precisely calibrated in order to correctly reconstruct the events recorded. Calibration constants are derived from different workflows, from promptly reconstructed events with particles as well as from commissioning events gathered just before the acquisition of physics runs. The performance of the SST has been carefully studied since the beginning of data taking: the noise of the detector, data integrity, signal-over-noise ratio, hit reconstruction efficiency and resolution have been all investigated with time and for different conditions. In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

  7. Efficiency measurements for 3D silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich, E-mail: ulrich.parzefall@physik.uni-freiburg.d [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Dalla Betta, Gian-Franco [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Koehler, Michael; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2010-11-01

    Silicon strip detectors are widely used as part of the inner tracking layers in particle physics experiments. For applications at the luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, silicon detectors with extreme radiation hardness are required. The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors. Detectors with several innovative 3D designs that constitute a simpler and more cost-effective processing than the 3D design initially proposed were connected to read-out electronics from LHC experiments and subsequently tested. Results on the amount of charge collected, the noise and the uniformity of charge collection are given.

  8. Strip interpolation in silicon and germanium strip detectors

    International Nuclear Information System (INIS)

    Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

    2004-01-01

    The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM

  9. Silicon strip detectors for the ATLAS upgrade

    CERN Document Server

    Gonzalez Sevilla, S; The ATLAS collaboration

    2011-01-01

    The Large Hadron Collider at CERN will extend its current physics program by increasing the peak luminosity by one order of magnitude. For ATLAS, one of the two general-purpose experiments of the LHC, an upgrade scenario will imply the complete replacement of its internal tracker due to the harsh conditions in terms of particle rates and radiation doses. New radiation-hard prototype n-in-p silicon sensors have been produced for the short-strip region of the future ATLAS tracker. The sensors have been irradiated up to the fluences expected in the high-luminous LHC collider. This paper summarizes recent results on the performance of the irradiated n-in-p detectors.

  10. The charge collection in silicon strip detectors

    International Nuclear Information System (INIS)

    Boehringer, T.; Hubbeling, L.; Weilhammer, P.; Kemmer, J.; Koetz, U.; Riebesell, M.; Belau, E.; Klanner, R.; Lutz, G.; Neugebauer, E.; Seebrunner, H.J.; Wylie, A.

    1983-02-01

    The charge collection in silicon detectors has been studied, by measuring the response to high-energy particles of a 20μm pitch strip detector as a function of applied voltage and magnetic field. The results are well described by a simple model. The model is used to predict the spatial resolution of silicon strip detectors and to propose a detector with optimized spatial resolution. (orig.)

  11. Silicon strip detectors for the ATLAS HL-LHC upgrade

    CERN Document Server

    Gonzalez Sevilla, S; The ATLAS collaboration

    2011-01-01

    The LHC upgrade is foreseen to increase the ATLAS design luminosity by a factor ten, implying the need to build a new tracker suited to the harsh HL-LHC conditions in terms of particle rates and radiation doses. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. We give an overview of the ATLAS tracker upgrade project, in particular focusing on the crucial innermost silicon strip layers. Results from a wide range of irradiated silicon detectors for the strip region of the future ATLAS tracker are presented. Layout concepts for lightweight yet mechanically very rigid detector modules with high service integration are shown.

  12. Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

  13. Charge collection in silicon strip detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

    1982-11-01

    The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 μm in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors

  14. Silicon Strip Detectors for the ATLAS sLHC Upgrade

    CERN Document Server

    Miñano, M; The ATLAS collaboration

    2011-01-01

    While the Large Hadron Collider (LHC) at CERN is continuing to deliver an ever-increasing luminosity to the experiments, plans for an upgraded machine called Super-LHC (sLHC) are progressing. The upgrade is foreseen to increase the LHC design luminosity by a factor ten. The ATLAS experiment will need to build a new tracker for sLHC operation, which needs to be suited to the harsh sLHC conditions in terms of particle rates. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. The left part of figure 1 shows the simulated layout for the ATLAS tracker upgrade to be installed in the volume taken up by the current ATLAS pixel, strip and transition radiation detectors. Silicon sensors with sufficient radiation hardness are the subject of an international R&D programme, working on pixel and strip sensors. The...

  15. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  16. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

  17. The new silicon strip detectors for the CMS tracker upgrade

    International Nuclear Information System (INIS)

    Dragicevic, M.

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

  18. Hardness of approximation for strip packing

    DEFF Research Database (Denmark)

    Adamaszek, Anna Maria; Kociumaka, Tomasz; Pilipczuk, Marcin

    2017-01-01

    Strip packing is a classical packing problem, where the goal is to pack a set of rectangular objects into a strip of a given width, while minimizing the total height of the packing. The problem has multiple applications, for example, in scheduling and stock-cutting, and has been studied extensively......)-approximation by two independent research groups [FSTTCS 2016,WALCOM 2017]. This raises a questionwhether strip packing with polynomially bounded input data admits a quasi-polynomial time approximation scheme, as is the case for related twodimensional packing problems like maximum independent set of rectangles or two...

  19. The Argonne silicon strip-detector array

    Energy Technology Data Exchange (ETDEWEB)

    Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

    1992-08-01

    Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

  20. Digital autoradiography using silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Overdick, M.

    1998-05-01

    Spatially resolving radiation detection systems operating in real time can be used to acquire autoradiographic images. An overview over alternatives to traditional autoradiography is given and the special features of these filmless methods are discussed. On this basis the design of a system for digital autoradiography using silicon strip detectors is presented. Special emphasis is put on the physical background of the detection process in the semiconductor and on the self-triggering read-out technique. The practical performance of the system is analyzed with respect to energy and spatial resolution. This analysis is complemented by case studies from cell biology (especially electrophoresis), botany and mineralogy. Also the results from a time-resolved autoradiographic experiment are presented. (orig.) 80 refs.

  1. Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

  2. The GLAST silicon-strip tracking system

    International Nuclear Information System (INIS)

    Johnson, Robert P.

    2000-01-01

    The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma-ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4x4 array of tower modules with an aperture of 2.9 m2 and an effective area of greater than 8000 cm2

  3. The GLAST Silicon-Strip Tracking System

    International Nuclear Information System (INIS)

    Johnson, R

    2004-01-01

    The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 (micro)W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4 x 4 array of tower modules with an aperture of 2.9 m 2 and an effective area of greater than 8000 cm 2

  4. P-Type Silicon Strip Sensors for the Future CMS Tracker

    CERN Document Server

    The Tracker Group of the CMS Collaboration

    2016-01-01

    The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  5. The New Silicon Strip Detectors for the CMS Tracker Upgrade

    CERN Document Server

    Dragicevic, Marko

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

  6. Quality Tests of Double-Sided Silicon Strip Detectors

    CERN Document Server

    Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

    1997-01-01

    The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

  7. Fast timing readout for silicon strip detectors

    International Nuclear Information System (INIS)

    Jhingan, A.; Saneesh, N.; Kumar, M.

    2016-01-01

    The development and performance of a 16 channel hybrid fast timing amplifier (FTA), for extracting timing information from silicon strip detectors (SSD), is described. The FTA will be used in a time of flight (TOF) measurement, in which one SSD is used to obtain the ion velocity (A) as well as the energy information of a scattered particle. The TOF information with a thin transmission SSD, acting as ΔE detector (Z) in a detector telescope, will provide a unique detection system for the identification of reaction products in the slowed down beam campaign of low energy branch (LEB) at NUSTAR-FAIR. Such a system will also provide large solid angle coverage with ~ 100% detection efficiency, and adequate segmentation for angular information. A good timing resolution (≤ 100 ps) enables to have shorter flight paths, thus a closely packed 4π array should be feasible. Preamplifiers for energy readout in SSD are easily available. A major constraint with SSDs is the missing high density multichannel preamplifiers which can provide both fast timing as well as energy. Provision of both timing and energy processing, generally makes circuit bulky, with higher power consumption, which may not be suitable in SSD arrays. In case of DSSSD, the problem was overcome by using timing from one side and energy from the other side. A custom designed 16 channel FTA has been developed for DSSSD design W from Micron Semiconductors, UK

  8. Compton recoil electron tracking with silicon strip detectors

    International Nuclear Information System (INIS)

    O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

    1992-01-01

    The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

  9. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  10. Experience with the silicon strip detector of ALICE

    NARCIS (Netherlands)

    Nooren, G.J.L.

    2009-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

  11. Strip defect recognition in electrical tests of silicon microstrip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Valentan, Manfred, E-mail: valentan@mpp.mpg.de

    2017-02-11

    This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

  12. Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

    CERN Document Server

    Hara, K; The ATLAS collaboration

    2012-01-01

    present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

  13. Beam test of CSES silicon strip detector module

    Science.gov (United States)

    Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

    2017-05-01

    The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

  14. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

    2014-11-21

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

  15. Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

    2014-01-01

    This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

  16. Distribution of electric field and charge collection in silicon strip detectors

    International Nuclear Information System (INIS)

    Anokhin, I.E.; Zinets, O.S.

    1995-01-01

    The distribution of electric field in silicon strip detectors is analyzed in the case of dull depletion as well as for partial depletion. Influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed

  17. Silicon μ-strip detectors with SVX chip readout

    International Nuclear Information System (INIS)

    Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.; Timm, S.; Vorwalter, K.; Werding, R.

    1994-01-01

    A new silicon strip detector has been designed and constructed for a fixed target experiment at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into Fastbus memory. Construction and performance during the actual data taking run are discussed. ((orig.))

  18. Beam tests of ATLAS SCT silicon strip detector modules

    Czech Academy of Sciences Publication Activity Database

    Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2005-01-01

    Roč. 538, - (2005), s. 384-407 ISSN 0168-9002 R&D Projects: GA MŠk(CZ) 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * silicon * micro-strip * beam * test Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  19. The silicon strip detector at the Mark 2

    International Nuclear Information System (INIS)

    Jacobsen, R.; Golubev, V.; Lueth, V.; Barnett, B.; Dauncey, P.; Matthews, J.; Adolphsen, C.; Burchat, P.; Gratta, G.; King, M.; Labarga, L.; Litke, A.; Turala, M.; Zaccardelli, C.

    1990-04-01

    We have installed a Silicon Strip Vertex Detector in the Mark II detector at the Stanford Linear Collider. We report on the performance of the detector during a recent test run, including backgrounds, stability and charged particle tracking. 10 refs., 9 figs

  20. Development of the H1 backward silicon strip detector

    International Nuclear Information System (INIS)

    Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

    1996-10-01

    The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

  1. Development of the H1 backward silicon strip detector

    International Nuclear Information System (INIS)

    Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

    1997-01-01

    The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

  2. Influence for high intensity irradiation on characteristics of silicon strip-detectors

    International Nuclear Information System (INIS)

    Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

    1995-01-01

    Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

  3. Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

    CERN Document Server

    Peltola, T.

    2014-01-01

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

  4. Evaluation of silicon micro strip detectors with large read-out pitch

    International Nuclear Information System (INIS)

    Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

    1996-01-01

    For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

  5. ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

    International Nuclear Information System (INIS)

    Lefebvre, Michel; Minano Moya, Mercedes

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

  6. ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

    CERN Document Server

    Koehler, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue ...

  7. ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

    CERN Document Server

    Minano, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

  8. Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

    CERN Document Server

    Minano, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

  9. Laboratory course on silicon strip detectors

    International Nuclear Information System (INIS)

    Montano, Luis M

    2005-01-01

    In this laboratory course we present an elementary introduction to the characteristics and applications of silicon detectors in High-Energy Physics, through performing some measurements which give an overview of the properties of these detectors as position resolution. The principles of operation are described in the activities the students have to develop together with some exercises to reinforce their knowledge on these devices

  10. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

    2018-04-04

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

  11. MUST: A silicon strip detector array for radioactive beam experiments

    CERN Document Server

    Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

  12. Silicon strip detector qualification for the CMS experiment

    International Nuclear Information System (INIS)

    Kaussen, Gordon

    2008-01-01

    To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

  13. Silicon strip detector qualification for the CMS experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kaussen, Gordon

    2008-10-06

    To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

  14. SVX3: A deadtimeless readout chip for silicon strip detectors

    International Nuclear Information System (INIS)

    Zimmerman, T.; Huffman, T.; Srage, J.; Stroehmer, R.; Yarema, R.; Garcia-Sciveras, M.; Luo, L.; Milgrome, O.

    1997-12-01

    A new silicon strip readout chip called the SVX3 has been designed for the 720,000 channel CDF silicon upgrade at Fermilab. SVX3 incorporates an integrator, analog delay pipeline, ADC, and data sparsification for each of 128 identical channels. Many of the operating parameters are programmable via a serial bit stream, which allows the chip to be used under a variety of conditions. Distinct features of SVX3 include use of a backside substrate contact for optimal ground referencing, and the capability of simultaneous signal acquisition and digital readout allowing deadtimeless operation in the Fermilab Tevatron

  15. A new semicustom integrated bipolar amplifier for silicon strip detectors

    International Nuclear Information System (INIS)

    Zimmerman, T.

    1989-01-01

    The QPA02 is a four channel DC coupled two stage transimpedance amplifier designed at Fermilab on a semicustom linear array (Quickchip 2S) manufactured by Tektronix. The chip was developed as a silicon strip amplifier but may have other applications as well. Each channel consists of a preamplifier and a second stage amplifier/sharper with differential output which can directly drive a transmission line (90 to 140 ohms). External bypass capacitors are the only discrete components required. QPA02 has been tested and demonstrated to be an effective silicon strip amplifier. Other applications may exist which can use this amplifier or a modified version of this amplifier. For example, another design is now in progress for a wire chamber amplifier, QPA03, to be reported later. Only a relatively small effort was required to modify the design and layout for this application. 11 figs

  16. Radiation damage status of the ATLAS silicon strip detectors (SCT)

    CERN Document Server

    Kondo, Takahiko; The ATLAS collaboration

    2017-01-01

    The Silicon microstrip detector system (SCT) of the ATLAS experiment at LHC has been working well for about 7 years since 2010. The innermost layer has already received a few times of 10**13 1-MeV neutron-equivalent fluences/cm2. The evolutions of the radiation damage effects on strip sensors such as leakage current and full depletion voltages will be presented.

  17. Low dose radiation damage effects in silicon strip detectors

    International Nuclear Information System (INIS)

    Wiącek, P.; Dąbrowski, W.

    2016-01-01

    The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

  18. Low dose radiation damage effects in silicon strip detectors

    Science.gov (United States)

    Wiącek, P.; Dąbrowski, W.

    2016-11-01

    The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

  19. MUST: A silicon strip detector array for radioactive beam experiments

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

  20. The SVX3D integrated circuit for dead-timeless silicon strip readout

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Sciveres, M. E-mail: mgs@lbl.gov; Milgrome, O.; Zimmerman, T.; Volobouev, I.; Ely, R.P.; Connolly, A.; Fish, D.; Affolder, T.; Sill, A

    1999-10-01

    The revision D of the SVX3 readout IC has been fabricated in the Honeywell radiation-hard 0.8 {mu}m bulk CMOS process, for instrumenting 712,704 silicon strips in the upgrade to the Collider Detector at Fermilab. This final revision incorporates new features and changes to the original architecture that were added to meet the goal of dead-timeless operation. This paper describes the features central to dead-timeless operation, and presents test data for un-irradiated and irradiated SVX3D chips. (author)

  1. The CMS silicon strip tracker and its electronic readout

    International Nuclear Information System (INIS)

    Friedl, M.

    2001-05-01

    The Large Hadron Collider (LHC) at CERN (Geneva, CH) will be the world's biggest accelerator machine when operation starts in 2006. One of its four detector experiments is the Compact Muon Solenoid (CMS), consisting of a large-scale silicon tracker and electromagnetic and hadron calorimeters, all embedded in a solenoidal magnetic field of 4 T, and a muon system surrounding the magnet coil. The Silicon Strip Tracker has a sensitive area of 206m 2 with 10 million analog channels which are read out at the collider frequency of 40 MHz. The building blocks of the CMS Tracker are the silicon sensors, APV amplifier ASICs, supporting front-end ASICs, analog and digital optical links as well as data processors and control units in the back-end. Radiation tolerance, readout speed and the huge data volume are challenging requirements. The charge collection in silicon detectors was modeled, which is discussed as well as the concepts of readout amplifiers with respect to the LHC requirements, including the deconvolution method of fast pulse shaping, electronic noise constraints and radiation effects. Moreover, extensive measurements on prototype components of the CMS Tracker and different versions of the APV chip in particular were performed. There was a significant contribution to the construction of several detector modules, characterized them in particle beam tests and quantified radiation induced effects on the APV chip and on silicon detectors. In addition, a prototype of the analog optical link and the analog performance of the back-end digitization unit were evaluated. The results are very encouraging, demonstrating the feasibility of the CMS Silicon Strip Tracker system and motivating progress towards the construction phase. (author)

  2. Field oxide radiation damage measurements in silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

    1993-04-01

    Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

  3. Developing silicon strip detectors with a large-scale commercial foundry

    Energy Technology Data Exchange (ETDEWEB)

    König, A., E-mail: axel.koenig@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria)

    2016-07-11

    Since 2009 the Institute of High Energy Physics (HEPHY) in Vienna is developing a production process for planar silicon strip sensors on 6-in. wafers together with the semiconductor manufacturer Infineon Technologies. Four runs with several batches of wafers, each comprising six different sensors, were manufactured and characterized. A brief summary of the recently completed 6-in. campaign is given. Milestones in sensor development as well as techniques to improve the sensor quality are discussed. Particular emphasis is placed on a failure causing areas of defective strips which accompanied the whole campaign. Beam tests at different irradiation facilities were conducted to validate the key capability of particle detection. Another major aspect is to prove the radiation hardness of sensors produced by Infineon. Therefore, neutron irradiation studies were performed.

  4. Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Fisichella, M.; Forneris, J.; Grassi, L.

    2015-01-01

    We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

  5. Development and performance of double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

    1991-01-01

    Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

  6. New developments in double sided silicon strip detectors

    International Nuclear Information System (INIS)

    Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

    1990-01-01

    A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

  7. Infrared LED Array For Silicon Strip Detector Qualification

    CERN Document Server

    Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

    2003-01-01

    The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

  8. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  9. Silicon strip detector system for Fermilab E706

    Energy Technology Data Exchange (ETDEWEB)

    Engels, E Jr; Mani, S; Plants, D; Shepard, P F; Wilkins, R [Pittsburgh Univ., PA (USA); Hossain, S [Northeastern Univ., Boston, MA (USA)

    1984-09-15

    Fermilab Experiment E706 is an experiment to study direct photon production in hadron-hadron collisions at the Fermilab Tevatron II. A part of the charged particle spectrometer is a silicon strip detector system used to determine the position of interaction vertices in the production target and to provide angular formation about the secondary hadrons produced in a collision. We present some design criteria, as well as the results of tests of a wafer similar to those to be used in the experiment.

  10. Beam tests of ATLAS SCT silicon strip detector modules

    CERN Document Server

    Campabadal, F; Key, M; Lozano, M; Martínez, C; Pellegrini, G; Rafí, J M; Ullán, M; Johansen, L; Pommeresche, B; Stugu, B; Ciocio, A; Fadeev, V; Gilchriese, M G D; Haber, C; Siegrist, J; Spieler, H; Vu, C; Bell, P J; Charlton, D G; Dowell, John D; Gallop, B J; Homer, R J; Jovanovic, P; Mahout, G; McMahon, T J; Wilson, J A; Barr, A J; Carter, J R; Fromant, B P; Goodrick, M J; Hill, J C; Lester, C G; Palmer, M J; Parker, M A; Robinson, D; Sabetfakhri, A; Shaw, R J; Anghinolfi, F; Chesi, Enrico Guido; Chouridou, S; Fortin, R; Grosse-Knetter, J; Gruwé, M; Ferrari, P; Jarron, P; Kaplon, J; MacPherson, A; Niinikoski, T O; Pernegger, H; Roe, S; Rudge, A; Ruggiero, G; Wallny, R; Weilhammer, P; Bialas, W; Dabrowski, W; Grybos, P; Koperny, S; Blocki, J; Brückman, P; Gadomski, S; Godlewski, J; Górnicki, E; Malecki, P; Moszczynski, A; Stanecka, E; Stodulski, M; Szczygiel, R; Turala, M; Wolter, M; Ahmad, A; Benes, J; Carpentieri, C; Feld, L; Ketterer, C; Ludwig, J; Meinhardt, J; Runge, K; Mikulec, B; Mangin-Brinet, M; D'Onofrio, M; Donega, M; Moêd, S; Sfyrla, A; Ferrère, D; Clark, A G; Perrin, E; Weber, M; Bates, R L; Cheplakov, A P; Saxon, D H; O'Shea, V; Smith, K M; Iwata, Y; Ohsugi, T; Kohriki, T; Kondo, T; Terada, S; Ujiie, N; Ikegami, Y; Unno, Y; Takashima, R; Brodbeck, T; Chilingarov, A G; Hughes, G; Ratoff, P; Sloan, T; Allport, P P; Casse, G L; Greenall, A; Jackson, J N; Jones, T J; King, B T; Maxfield, S J; Smith, N A; Sutcliffe, P; Vossebeld, Joost Herman; Beck, G A; Carter, A A; Lloyd, S L; Martin, A J; Morris, J; Morin, J; Nagai, K; Pritchard, T W; Anderson, B E; Butterworth, J M; Fraser, T J; Jones, T W; Lane, J B; Postranecky, M; Warren, M R M; Cindro, V; Kramberger, G; Mandic, I; Mikuz, M; Duerdoth, I P; Freestone, J; Foster, J M; Ibbotson, M; Loebinger, F K; Pater, J; Snow, S W; Thompson, R J; Atkinson, T M; Bright, G; Kazi, S; Lindsay, S; Moorhead, G F; Taylor, G N; Bachindgagyan, G; Baranova, N; Karmanov, D; Merkine, M; Andricek, L; Bethke, Siegfried; Kudlaty, J; Lutz, Gerhard; Moser, H G; Nisius, R; Richter, R; Schieck, J; Cornelissen, T; Gorfine, G W; Hartjes, F G; Hessey, N P; de Jong, P; Muijs, A J M; Peeters, S J M; Tomeda, Y; Tanaka, R; Nakano, I; Dorholt, O; Danielsen, K M; Huse, T; Sandaker, H; Stapnes, S; Bargassa, Pedrame; Reichold, A; Huffman, T; Nickerson, R B; Weidberg, A; Doucas, G; Hawes, B; Lau, W; Howell, D; Kundu, N; Wastie, R; Böhm, J; Mikestikova, M; Stastny, J; Broklová, Z; Broz, J; Dolezal, Z; Kodys, P; Kubík, P; Reznicek, P; Vorobel, V; Wilhelm, I; Chren, D; Horazdovsky, T; Linhart, V; Pospísil, S; Sinor, M; Solar, M; Sopko, B; Stekl, I; Ardashev, E N; Golovnya, S N; Gorokhov, S A; Kholodenko, A G; Rudenko, R E; Ryadovikov, V N; Vorobev, A P; Adkin, P J; Apsimon, R J; Batchelor, L E; Bizzell, J P; Booker, P; Davis, V R; Easton, J M; Fowler, C; Gibson, M D; Haywood, S J; MacWaters, C; Matheson, J P; Matson, R M; McMahon, S J; Morris, F S; Morrissey, M; Murray, W J; Phillips, P W; Tyndel, M; Villani, E G; Dorfan, D E; Grillo, A A; Rosenbaum, F; Sadrozinski, H F W; Seiden, A; Spencer, E; Wilder, M; Booth, P; Buttar, C M; Dawson, I; Dervan, P; Grigson, C; Harper, R; Moraes, A; Peak, L S; Varvell, K E; Chu Ming Lee; Hou Li Shing; Lee Shih Chang; Teng Ping Kun; Wan Chang Chun; Hara, K; Kato, Y; Kuwano, T; Minagawa, M; Sengoku, H; Bingefors, N; Brenner, R; Ekelöf, T J C; Eklund, L; Bernabeu, J; Civera, J V; Costa, M J; Fuster, J; García, C; García, J E; González-Sevilla, S; Lacasta, C; Llosa, G; Martí i García, S; Modesto, P; Sánchez, J; Sospedra, L; Vos, M; Fasching, D; González, S; Jared, R C; Charles, E

    2005-01-01

    The design and technology of the silicon strip detector modules for the Semiconductor Tracker (SCT) of the ATLAS experiment have been finalised in the last several years. Integral to this process has been the measurement and verification of the tracking performance of the different module types in test beams at the CERN SPS and the KEK PS. Tests have been performed to explore the module performance under various operating conditions including detector bias voltage, magnetic field, incidence angle, and state of irradiation up to 3 multiplied by 1014 protons per square centimetre. A particular emphasis has been the understanding of the operational consequences of the binary readout scheme.

  11. Assembly of an endcap of the ATLAS silicon strip detector at NIKHEF, Amsterdam.

    CERN Multimedia

    Ginter, P

    2005-01-01

    Assembly of an endcap of the ATLAS silicon strip detector (SCT) at NIKHEF, Amsterdam. Technicians are mounting the power distribution cables on the cylinder that houses nine disks with silicon sensors.

  12. ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

    CERN Document Server

    Koehler, M; The ATLAS collaboration

    2010-01-01

    To extend the physics potential of the Large Hadron Colider (LHC) at CERN, upgrades of the accelerator complex and the detectors towards the Super-LHC (sLHC) are foreseen. The upgrades, separated in Phase-1 and Phase-2, aim at increasing the luminosity while leaving the energy of the colliding particles (7 TeV per proton beam) unchanged. After the Phase-2 upgrade the instantaneous luminosity will be a factor of 5-10 higher than the design luminosity of the LHC. Due to the increased track rate and extreme radiation levels for the tracking detectors, upgrades of the detectors are necessary. At ATLAS, one of the two general purpose detectors at the LHC, the current inner detector will be replaced by an all-silicon tracker. This article describes the plans for the Phase-2 upgrade of the silicon strip detector of ATLAS. Radiation hard n-in-p silicon detectors with shorter strips than currently installed in ATLAS are planned. Results of measurements with these sensors and plans for module designs will be discussed.

  13. Large-scale module production for the CMS silicon strip tracker

    CERN Document Server

    Cattai, A

    2005-01-01

    The Silicon Strip Tracker (SST) for the CMS experiment at LHC consists of 210 m**2 of silicon strip detectors grouped into four distinct sub-systems. We present a brief description of the CMS Tracker, the industrialised detector module production methods and the current status of the SST with reference to some problems encountered at the factories and in the construction centres.

  14. Performance of the CAMEX64 silicon strip readout chip

    International Nuclear Information System (INIS)

    Yarema, R.J.

    1989-06-01

    The CAMEX64 is a 64 channel full custom CMOS chip designed specifically for the readout of silicon strip detectors. CAMEX which stands for CMOS Multichannel Analog MultiplEXer for Silicon Strip Detectors was designed by members of the Franhofer Institute for Microelectronic Circuits and Systems and the Max Planck Institute for Physics and Astrophysics. Each CAMEX channel has a switched capacitor charge sensitive amplifier with 4 sampling capacitors and a multiplexing scheme for reading out each of the channels on an analog bus. The device uses multiple sampling capacitors to filter and reduce input noise. Filtering is controlled through sampling techniques using external clocks. The device operates in a double correlated sampling mode and therefore cannot separate detector leakage current from a charge input. Normal operation of this device is similar to all other silicon readout chips designed and built thus far in that there is a data acquisition cycle during which charge is simultaneously accepted on all channels for a short period of time from a detector array, followed by a readout cycle where that charge or hit information is read out. This device works especially well for colliding beam experiments where the time of charge arrival is accurately known. However it can be used in fixed target or asynchronous mode where the time of charge arrival is not well known. In the asynchronous mode it appears that gain is somewhat dependent on the time interval required to decide whether or not to accept charge input information and thus the maximum signal to noise performance found with the synchronous mode may not be achieved in the asynchronous mode. 18 figs., 5 tabs

  15. Characterization of a dose verification system dedicated to radiotherapy treatments based on a silicon detector multi-strips

    International Nuclear Information System (INIS)

    Bocca, A.; Cortes Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Aranas, R.; Abou Haidar, Z.; Alvarez, M. A. G.; Quesada, J. M.; Vega-Leal, A. P.; Perez Neto, F. J.

    2011-01-01

    In this paper, we present the characterization of a silicon detector multi-strips (SSSSD: Single Sided Silicon Strip Detector), developed by the company Micron Semiconductors Ltd. for use as a verification system for radiotherapy treatments.

  16. Coordinate determination of high energy charged particles by silicon strip detectors

    International Nuclear Information System (INIS)

    Anokhin, I.E.; Zinets, O.S.

    2002-01-01

    The coordinate determination accuracy of minimum ionizing and short-range particles by silicon strip detectors has been considered. The charge collection on neighboring strips of the detector is studied and the influence of diffusion and the electric field distribution on the accuracy of the coordinate determination is analyzed. It has been shown that coordinates of both minimum ionizing and short-range particles can be determined with accuracy to a few microns using silicon strip detectors. 11 refs.; 8 figs

  17. EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arteche, F.; /CERN /Imperial Coll., London; Rivetta, C.; /SLAC

    2006-06-06

    The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

  18. A silicon strip detector dose magnifying glass for IMRT dosimetry

    International Nuclear Information System (INIS)

    Wong, J. H. D.; Carolan, M.; Lerch, M. L. F.; Petasecca, M.; Khanna, S.; Perevertaylo, V. L.; Metcalfe, P.; Rosenfeld, A. B.

    2010-01-01

    Purpose: Intensity modulated radiation therapy (IMRT) allows the delivery of escalated radiation dose to tumor while sparing adjacent critical organs. In doing so, IMRT plans tend to incorporate steep dose gradients at interfaces between the target and the organs at risk. Current quality assurance (QA) verification tools such as 2D diode arrays, are limited by their spatial resolution and conventional films are nonreal time. In this article, the authors describe a novel silicon strip detector (CMRP DMG) of high spatial resolution (200 μm) suitable for measuring the high dose gradients in an IMRT delivery. Methods: A full characterization of the detector was performed, including dose per pulse effect, percent depth dose comparison with Farmer ion chamber measurements, stem effect, dose linearity, uniformity, energy response, angular response, and penumbra measurements. They also present the application of the CMRP DMG in the dosimetric verification of a clinical IMRT plan. Results: The detector response changed by 23% for a 390-fold change in the dose per pulse. A correction function is derived to correct for this effect. The strip detector depth dose curve agrees with the Farmer ion chamber within 0.8%. The stem effect was negligible (0.2%). The dose linearity was excellent for the dose range of 3-300 cGy. A uniformity correction method is described to correct for variations in the individual detector pixel responses. The detector showed an over-response relative to tissue dose at lower photon energies with the maximum dose response at 75 kVp nominal photon energy. Penumbra studies using a Varian Clinac 21EX at 1.5 and 10.0 cm depths were measured to be 2.77 and 3.94 mm for the secondary collimators, 3.52 and 5.60 mm for the multileaf collimator rounded leaf ends, respectively. Point doses measured with the strip detector were compared to doses measured with EBT film and doses predicted by the Philips Pinnacle treatment planning system. The differences were 1.1%

  19. Data quality monitoring of the CMS Silicon Strip Tracker detector

    International Nuclear Information System (INIS)

    Benucci, L.

    2010-01-01

    The Physics and Data Quality Monitoring (DQM) framework aims at providing a homogeneous monitoring environment across various applications related to data taking at the CMS experiment. In this contribution, the DQM system for the Silicon Strip Tracker will be introduced. The set of elements to assess the status of detector will be mentioned, along with the way to identify problems and trace them to specific tracker elements. Monitoring tools, user interfaces and automated software will be briefly described. The system was used during extensive cosmic data taking of CMS in Autumn 2008, where it demonstrated to have a flexible and robust implementation and has been essential to improve the understanding of the detector. CMS Collaboration believes that this tool is now mature to face the forthcoming data-taking era.

  20. Developments toward a silicon strip tracker for the PANDA experiment

    International Nuclear Information System (INIS)

    Zaunick, Hans-Georg

    2013-01-01

    The PANDA detector at the future FAIR facility in Darmstadt will be a key experiment in the understanding of the strong interaction at medium energies where perturbative models fail to describe the quark-quark interaction. An important feature of the detector system is the ability to reconstruct secondary decay vertices of short-lived intermediate states by means of a powerful particle tracking system with the the Micro-Vertex Detector (MVD) as central element to perform high-resolution charmonium and open-charm spectroscopy. The MVD is conceived with pixel detectors in the inner parts and double-sided silicon strip detectors at the outer half in a very lightweight design. The PANDA detector system shall be operated in a self-triggering broadband acquisition mode. Implications on the read-out electronics and the construction of the front-end assemblies are analyzed and evaluation of prototype DSSD-detectors wrt. signal-to-noise ratio, noise figures, charge sharing behavior, spatial resolution and radiation degradation discussed. Methods of electrical sensor characterization with different measurement setups are investigated which may be useful for future large-scale QA procedures. A novel algorithm for recovering multiple degenerate cluster hit patterns of double-sided strip sensors is introduced and a possible architecture of a Module Data Concentrator ASIC (MDC) aggregating multiple front-end data streams conceived. A first integrative concept for the construction and assembly of DSSD modules for the barrel part of the MVD is introduced as a conclusion of the thesis. Furthermore, a detailed description of a simplified procedure for the calculation of displacement damage in compound materials is given as reference which was found useful for the retrieval of non-ionizing energy loss for materials other than silicon.

  1. Petalet prototype for the ATLAS silicon strip detector upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Sperlich, Dennis [Humboldt-Universitaet zu Berlin (Germany); Gregor, Ingrid-Maria; Bloch, Ingo; Keller, John Stakely; Lohwasser, Kristin; Poley, Louise; Zakharchuk, Nataliia; Diez Cornell, Sergio [DESY (Germany); Hauser, Marc Manuel; Mori, Riccardo; Kuehl, Susanne; Parzefall, Ulrich [Albert-Ludwigs Universitaet Freiburg (Germany)

    2015-07-01

    To achieve more precise measurements and to search new physics phenomena, the luminosity at the LHC is expected to be increased during a series of upgrades in the next years. The latest scheduled upgrade, called the High Luminosity LHC (HL-LHC) is proposed to provide instantaneous luminosity of 5 x 10{sup 34} cm{sup 2}s{sup -1}. The increased luminosity and the radiation damage will affect the current Inner Tracker. In order to cope with the higher radiation dose and occupancy, the ATLAS experiment plans to replace the current Inner Detector with a new all-silicon tracker consisting of ∝8 m{sup 2} pixel and ∝192 m{sup 2} strip detectors. In response to the needs, highly modular structures will be used for the strip system, called Staves for the barrel region and Petals for the end-caps region. A small-scaled prototype for the Petal, the Petalet, is built to study some specialties of this complex wedge-shaped structures. The Petalet consists of one large and two small sized sensors. This report focuses on the recent progress in the prototyping of the Petalet and their electrical performances.

  2. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

    CERN Document Server

    AUTHOR|(CDS)2084505

    2015-01-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

  3. Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

    International Nuclear Information System (INIS)

    Yan Wenqi; Hu Hailong; Zhang Gaolong

    2013-01-01

    Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

  4. The Laser Alignment System for the CMS silicon strip tracker

    CERN Document Server

    Olzem, Jan

    2009-01-01

    The Laser Alignment System (LAS) of the CMS silicon strip Tracker has been designed for surveying the geometry of the large-scale Tracker support structures. It uses 40 laser beams ($\\lambda$ = 1075 nm) that induce signals on a subset of the Tracker silicon sensors. The positions in space of the laser spots on the sensors are reconstructed with a resolution of 30 $\\mu$m. From this, the LAS is capable of permanent in-time monitoring of the different Tracker components relative to each other with better than 30 $\\mu$m precision. Additionally, it can provide an absolute measurement of the Tracker mechanical structure with an accuracy better than 70 $\\mu$m, thereby supplying additional input to the track based alignment at detector startup. 31 out of the 40 LAS beams have been successfully operated during the CMS cosmic muon data taking campaign in autumn 2008. The alignment of the Tracker Endcap Discs and of the discs with respect to the Tracker Inner Barrel and Tracker Outer Barrel subdetectors was measured w...

  5. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  6. Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector

    International Nuclear Information System (INIS)

    Okuno, Shoji; Ikeda, Hirokazu; Saitoh, Yutaka

    1996-01-01

    We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors

  7. Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Auzinger, G. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); CERN, Geneva (Switzerland); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); König, A. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Infineon Technologies Austria AG, Villach (Austria); Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2014-11-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

  8. Silicon Strip detectors for the ATLAS End-Cap Tracker at the HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00232570

    Inside physics programme of the LHC different experiment upgrades are foreseen. After the phase-II upgrade of the ATLAS detector the luminosity will be increased up to 5-7.5x10E34 cm-2s-1. This will mean a considerable increase in the radiation levels, above 10E16 neq/cm2 in the inner regions. This thesis is focused on the development of silicon microstrip detectors enough radiation hard to cope with the particle fluence expected at the ATLAS detector during HL-LHC experiment. In particular on the electrical characterization of silicon sensors for the ATLAS End-Caps. Different mechanical and thermal tests are shown using a Petal core as well as the electrical characterization of the silicon sensors that will be used with the Petal structure. Charge collection efficiency studies are carried out on sensors with different irradiation fluences using the ALiBaVa system and two kinds of strips connection are also analized (DC and AC ganging) with a laser system. The Petalet project is presented and the electrical c...

  9. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  10. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  11. First results from a silicon-strip detector with VLSI readout

    International Nuclear Information System (INIS)

    Anzivino, G.; Horisberger, R.; Hubbeling, L.; Hyams, B.; Parker, S.; Breakstone, A.; Litke, A.M.; Walker, J.T.; Bingefors, N.

    1986-01-01

    A 256-strip silicon detector with 25 μm strip pitch, connected to two 128-channel NMOS VLSI chips (Microplex), has been tested using straight-through tracks from a ruthenium beta source. The readout channels have a pitch of 47.5 μm. A single multiplexed output provides voltages proportional to the integrated charge from each strip. The most probable signal height from the beta traversals is approximately 14 times the rms noise in any single channel. (orig.)

  12. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    OpenAIRE

    Poley, Anne-Luise

    2018-01-01

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy).The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole...

  13. Signal collection and position reconstruction of silicon strip detectors with 200 μm readout pitch

    International Nuclear Information System (INIS)

    Krammer, M.; Pernegger, H.

    1997-01-01

    Silicon strip detectors with large readout pitch and intermediate strips offer an interesting approach to reduce the number of readout channels in the tracking systems of future collider experiments without compromising too much on the spatial resolution. Various detector geometries with a readout pitch of 200 μm have been studied for their signal response and spatial resolution. (orig.)

  14. Quality assurance and irradiation studies on CMS silicon strip sensors

    CERN Document Server

    Furgeri, Alexander

    The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

  15. A Proposal to Upgrade the Silicon Strip Detector

    International Nuclear Information System (INIS)

    Matis, Howard; Michael, LeVine; Jonathan, Bouchet; Stephane, Bouvier; Artemios, Geromitsos; Gerard, Guilloux; Sonia, Kabana; Christophe, Renard; Howard, Matis; Jim, Thomas; Vi Nham, Tram

    2007-01-01

    The STAR Silicon Strip Detector (SSD) was built by a collaboration of Nantes, Strasbourg and Warsaw collaborators. It is a beautiful detector; it can provide 500 mu m scale pointing resolution at the vertex when working in combination with the TPC. It was first used in Run 4, when half the SSD was installed in an engineering run. The full detector was installed for Run 5 (the Cu-Cu run) and the operation and performance of the detector was very successful. However, in preparation for Run 6, two noisy ladders (out of 20) were replaced and this required that the SSD be removed from the STAR detector. The re-installation of the SSD was not fully successful and so for the next two Runs, 6 and 7, the SSD suffered a cooling system failure that allowed a large fraction of the ladders to overheat and become noisy, or fail. (The cause of the SSD cooling failure was rather trivial but the SSD could not be removed between Runs 6 and 7 due to the inability of the STAR detector to roll along its tracks at that time.)

  16. Position-sensitive silicon strip detector characterization using particle beams

    CERN Document Server

    Maenpaeae, Teppo

    2012-01-01

    Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

  17. Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

    CERN Document Server

    Hara, K; The ATLAS collaboration

    2012-01-01

    The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

  18. First thin AC-coupled silicon strip sensors on 8-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

    2016-09-11

    The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

  19. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    International Nuclear Information System (INIS)

    Larionov, Pavel

    2016-10-01

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

  20. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel

    2016-10-15

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

  1. Proposed method of assembly for the BCD silicon strip vertex detector modules

    International Nuclear Information System (INIS)

    Lindenmeyer, C.

    1989-01-01

    The BCD Silicon strip Vertex Detector is constructed of 10 identical central region modules and 18 similar forward region modules. This memo describes a method of assembling these modules from individual silicon wafers. Each wafer is fitted with associated front end electronics and cables and has been tested to insure that only good wafers reach the final assembly stage. 5 figs

  2. The development of two ASIC's for a fast silicon strip detector readout system

    International Nuclear Information System (INIS)

    Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

    1989-01-01

    A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

  3. Reception Test of Petals for the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Bremer, R; Klein, Katja; Schmitz, Stefan Antonius; Adler, Volker; Adolphi, Roman; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and was inserted into the CMS detector in late 2007. The largest sub system of the tracker are its end caps, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted onto the TEC support structures. Each end cap consists of 144 such petals, which were built and fully qualified by several institutes across Europe. From

  4. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

    CERN Document Server

    Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

    2014-01-01

    Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

  5. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  6. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  7. Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

    International Nuclear Information System (INIS)

    Laakso, M.

    1992-03-01

    Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N + - strips or the usage of the phenomenon known as the punch-through effect for P + - strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade

  8. Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland))

    1992-03-01

    Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

  9. Investigation of the charge collection for strongly irradiated silicon strip detectors of the CMS ECAL Preshower

    International Nuclear Information System (INIS)

    Bloch, Ph.; Peisert, A.; Chang, Y.H.; Chen, A.E.; Hou, S.; Lin, W.T.; Cheremukhin, A.E.; Golutvin, I.A.; Urkinbaev, A.R.; Zamyatin, N.I.; Loukas, D.

    2001-01-01

    Strongly irradiated (2.3·10 14 n/cm 2 ) silicon strip detectors of different size, thickness and different design options were tested in a muon beam at CERN in 1999. A charge collection efficiency in excess of 85% and a signal-to-noise ratio of about 6 are obtained in all cases at high enough bias voltage. Details of the charge collection in the interstrip and the guard ring region and cross-talk between strips were also studied. We find that the charge collection efficiency and the cross-talk between strips depend on the interstrip distance

  10. Commissioning and Performance of the CMS Silicon Strip Tracker with Cosmic Ray Muons

    CERN Document Server

    Chatrchyan, S; Sirunyan, A M; Adam, W; Arnold, B; Bergauer, H; Bergauer, T; Dragicevic, M; Eichberger, M; Erö, J; Friedl, M; Frühwirth, R; Ghete, V M; Hammer, J; Hänsel, S; Hoch, M; Hörmann, N; Hrubec, J; Jeitler, M; Kasieczka, G; Kastner, K; Krammer, M; Liko, D; Magrans de Abril, I; Mikulec, I; Mittermayr, F; Neuherz, B; Oberegger, M; Padrta, M; Pernicka, M; Rohringer, H; Schmid, S; Schöfbeck, R; Schreiner, T; Stark, R; Steininger, H; Strauss, J; Taurok, A; Teischinger, F; Themel, T; Uhl, D; Wagner, P; Waltenberger, W; Walzel, G; Widl, E; Wulz, C E; Chekhovsky, V; Dvornikov, O; Emeliantchik, I; Litomin, A; Makarenko, V; Marfin, I; Mossolov, V; Shumeiko, N; Solin, A; Stefanovitch, R; Suarez Gonzalez, J; Tikhonov, A; Fedorov, A; Karneyeu, A; Korzhik, M; Panov, V; Zuyeuski, R; Kuchinsky, P; Beaumont, W; Benucci, L; Cardaci, M; De Wolf, E A; Delmeire, E; Druzhkin, D; Hashemi, M; Janssen, X; Maes, T; Mucibello, L; Ochesanu, S; Rougny, R; Selvaggi, M; Van Haevermaet, H; Van Mechelen, P; Van Remortel, N; Adler, V; Beauceron, S; Blyweert, S; D'Hondt, J; De Weirdt, S; Devroede, O; Heyninck, J; Kalogeropoulos, A; Maes, J; Maes, M; Mozer, M U; Tavernier, S; Van Doninck, W; Van Mulders, P; Villella, I; Bouhali, O; Chabert, E C; Charaf, O; Clerbaux, B; De Lentdecker, G; Dero, V; Elgammal, S; Gay, A P R; Hammad, G H; Marage, P E; Rugovac, S; Vander Velde, C; Vanlaer, P; Wickens, J; Grunewald, M; Klein, B; Marinov, A; Ryckbosch, D; Thyssen, F; Tytgat, M; Vanelderen, L; Verwilligen, P; Basegmez, S; Bruno, G; Caudron, J; Delaere, C; Demin, P; Favart, D; Giammanco, A; Grégoire, G; Lemaitre, V; Militaru, O; Ovyn, S; Piotrzkowski, K; Quertenmont, L; Schul, N; Beliy, N; Daubie, E; Alves, G A; Pol, M E; Souza, M H G; Carvalho, W; De Jesus Damiao, D; De Oliveira Martins, C; Fonseca De Souza, S; Mundim, L; Oguri, V; Santoro, A; Silva Do Amaral, S M; Sznajder, A; Fernandez Perez Tomei, T R; Ferreira Dias, M A; Gregores, E M; Novaes, S F; Abadjiev, K; Anguelov, T; Damgov, J; Darmenov, N; Dimitrov, L; Genchev, V; Iaydjiev, P; Piperov, S; Stoykova, S; Sultanov, G; Trayanov, R; Vankov, I; Dimitrov, A; Dyulendarova, M; Kozhuharov, V; Litov, L; Marinova, E; Mateev, M; Pavlov, B; Petkov, P; Toteva, Z; Chen, G M; Chen, H S; Guan, W; Jiang, C H; Liang, D; Liu, B; Meng, X; Tao, J; Wang, J; Wang, Z; Xue, Z; Zhang, Z; Ban, Y; Cai, J; Ge, Y; Guo, S; Hu, Z; Mao, Y; Qian, S J; Teng, H; Zhu, B; Avila, C; Baquero Ruiz, M; Carrillo Montoya, C A; Gomez, A; Gomez Moreno, B; Ocampo Rios, A A; Osorio Oliveros, A F; Reyes Romero, D; Sanabria, J C; Godinovic, N; Lelas, K; Plestina, R; Polic, D; Puljak, I; Antunovic, Z; Dzelalija, M; Brigljevic, V; Duric, S; Kadija, K; Morovic, S; Fereos, R; Galanti, M; Mousa, J; Papadakis, A; Ptochos, F; Razis, P A; Tsiakkouri, D; Zinonos, Z; Hektor, A; Kadastik, M; Kannike, K; Müntel, M; Raidal, M; Rebane, L; Anttila, E; Czellar, S; Härkönen, J; Heikkinen, A; Karimäki, V; Kinnunen, R; Klem, J; Kortelainen, M J; Lampén, T; Lassila-Perini, K; Lehti, S; Lindén, T; Luukka, P; Mäenpää, T; Nysten, J; Tuominen, E; Tuominiemi, J; Ungaro, D; Wendland, L; Banzuzi, K; Korpela, A; Tuuva, T; Nedelec, P; Sillou, D; Besancon, M; Chipaux, R; Dejardin, M; Denegri, D; Descamps, J; Fabbro, B; Faure, J L; Ferri, F; Ganjour, S; Gentit, F X; Givernaud, A; Gras, P; Hamel de Monchenault, G; Jarry, P; Lemaire, M C; Locci, E; Malcles, J; Marionneau, M; Millischer, L; Rander, J; Rosowsky, A; Rousseau, D; Titov, M; Verrecchia, P; Baffioni, S; Bianchini, L; Bluj, M; Busson, P; Charlot, C; Dobrzynski, L; Granier de Cassagnac, R; Haguenauer, M; Miné, P; Paganini, P; Sirois, Y; Thiebaux, C; Zabi, A; Agram, J L; Besson, A; Bloch, D; Bodin, D; Brom, J M; Conte, E; Drouhin, F; Fontaine, J C; Gelé, D; Goerlach, U; Gross, L; Juillot, P; Le Bihan, A C; Patois, Y; Speck, J; Van Hove, P; Baty, C; Bedjidian, M; Blaha, J; Boudoul, G; Brun, H; Chanon, N; Chierici, R; Contardo, D; Depasse, P; Dupasquier, T; El Mamouni, H; Fassi, F; Fay, J; Gascon, S; Ille, B; Kurca, T; Le Grand, T; Lethuillier, M; Lumb, N; Mirabito, L; Perries, S; Vander Donckt, M; Verdier, P; Djaoshvili, N; Roinishvili, N; Roinishvili, V; Amaglobeli, N; Adolphi, R; Anagnostou, G; Brauer, R; Braunschweig, W; Edelhoff, M; Esser, H; Feld, L; Karpinski, W; Khomich, A; Klein, K; Mohr, N; Ostaptchouk, A; Pandoulas, D; Pierschel, G; Raupach, F; Schael, S; Schultz von Dratzig, A; Schwering, G; Sprenger, D; Thomas, M; Weber, M; Wittmer, B; Wlochal, M; Actis, O; Altenhöfer, G; Bender, W; Biallass, P; Erdmann, M; Fetchenhauer, G; Frangenheim, J; Hebbeker, T; Hilgers, G; Hinzmann, A; Hoepfner, K; Hof, C; Kirsch, M; Klimkovich, T; Kreuzer, P; Lanske, D; Merschmeyer, M; Meyer, A; Philipps, B; Pieta, H; Reithler, H; Schmitz, S A; Sonnenschein, L; Sowa, M; Steggemann, J; Szczesny, H; Teyssier, D; Zeidler, C; Bontenackels, M; Davids, M; Duda, M; Flügge, G; Geenen, H; Giffels, M; Haj Ahmad, W; Hermanns, T; Heydhausen, D; Kalinin, S; Kress, T; Linn, A; Nowack, A; Perchalla, L; Poettgens, M; Pooth, O; Sauerland, P; Stahl, A; Tornier, D; Zoeller, M H; Aldaya Martin, M; Behrens, U; Borras, K; Campbell, A; Castro, E; Dammann, D; Eckerlin, G; Flossdorf, A; Flucke, G; Geiser, A; Hatton, D; Hauk, J; Jung, H; Kasemann, M; Katkov, I; Kleinwort, C; Kluge, H; Knutsson, A; Kuznetsova, E; Lange, W; Lohmann, W; Mankel, R; Marienfeld, M; Meyer, A B; Miglioranzi, S; Mnich, J; Ohlerich, M; Olzem, J; Parenti, A; Rosemann, C; Schmidt, R; Schoerner-Sadenius, T; Volyanskyy, D; Wissing, C; Zeuner, W D; Autermann, C; Bechtel, F; Draeger, J; Eckstein, D; Gebbert, U; Kaschube, K; Kaussen, G; Klanner, R; Mura, B; Naumann-Emme, S; Nowak, F; Pein, U; Sander, C; Schleper, P; Schum, T; Stadie, H; Steinbrück, G; Thomsen, J; Wolf, R; Bauer, J; Blüm, P; Buege, V; Cakir, A; Chwalek, T; De Boer, W; Dierlamm, A; Dirkes, G; Feindt, M; Felzmann, U; Frey, M; Furgeri, A; Gruschke, J; Hackstein, C; Hartmann, F; Heier, S; Heinrich, M; Held, H; Hirschbuehl, D; Hoffmann, K H; Honc, S; Jung, C; Kuhr, T; Liamsuwan, T; Martschei, D; Mueller, S; Müller, Th; Neuland, M B; Niegel, M; Oberst, O; Oehler, A; Ott, J; Peiffer, T; Piparo, D; Quast, G; Rabbertz, K; Ratnikov, F; Ratnikova, N; Renz, M; Saout, C; Sartisohn, G; Scheurer, A; Schieferdecker, P; Schilling, F P; Schott, G; Simonis, H J; Stober, F M; Sturm, P; Troendle, D; Trunov, A; Wagner, W; Wagner-Kuhr, J; Zeise, M; Zhukov, V; Ziebarth, E B; Daskalakis, G; Geralis, T; Karafasoulis, K; Kyriakis, A; Loukas, D; Markou, A; Markou, C; Mavrommatis, C; Petrakou, E; Zachariadou, A; Gouskos, L; Katsas, P; Panagiotou, A; Evangelou, I; Kokkas, P; Manthos, N; Papadopoulos, I; Patras, V; Triantis, F A; Bencze, G; Boldizsar, L; Debreczeni, G; Hajdu, C; Hernath, S; Hidas, P; Horvath, D; Krajczar, K; Laszlo, A; Patay, G; Sikler, F; Toth, N; Vesztergombi, G; Beni, N; Christian, G; Imrek, J; Molnar, J; Novak, D; Palinkas, J; Szekely, G; Szillasi, Z; Tokesi, K; Veszpremi, V; Kapusi, A; Marian, G; Raics, P; Szabo, Z; Trocsanyi, Z L; Ujvari, B; Zilizi, G; Bansal, S; Bawa, H S; Beri, S B; Bhatnagar, V; Jindal, M; Kaur, M; Kaur, R; Kohli, J M; Mehta, M Z; Nishu, N; Saini, L K; Sharma, A; Singh, A; Singh, J B; Singh, S P; Ahuja, S; Arora, S; Bhattacharya, S; Chauhan, S; Choudhary, B C; Gupta, P; Jain, S; Jha, M; Kumar, A; Ranjan, K; Shivpuri, R K; Srivastava, A K; Choudhury, R K; Dutta, D; Kailas, S; Kataria, S K; Mohanty, A K; Pant, L M; Shukla, P; Topkar, A; Aziz, T; Guchait, M; Gurtu, A; Maity, M; Majumder, D; Majumder, G; Mazumdar, K; Nayak, A; Saha, A; Sudhakar, K; Banerjee, S; Dugad, S; Mondal, N K; Arfaei, H; Bakhshiansohi, H; Fahim, A; Jafari, A; Mohammadi Najafabadi, M; Moshaii, A; Paktinat Mehdiabadi, S; Rouhani, S; Safarzadeh, B; Zeinali, M; Felcini, M; Abbrescia, M; Barbone, L; Chiumarulo, F; Clemente, A; Colaleo, A; Creanza, D; Cuscela, G; De Filippis, N; De Palma, M; De Robertis, G; Donvito, G; Fedele, F; Fiore, L; Franco, M; Iaselli, G; Lacalamita, N; Loddo, F; Lusito, L; Maggi, G; Maggi, M; Manna, N; Marangelli, B; My, S; Natali, S; Nuzzo, S; Papagni, G; Piccolomo, S; Pierro, G A; Pinto, C; Pompili, A; Pugliese, G; Rajan, R; Ranieri, A; Romano, F; Roselli, G; Selvaggi, G; Shinde, Y; Silvestris, L; Tupputi, S; Zito, G; Abbiendi, G; Bacchi, W; Benvenuti, A C; Boldini, M; Bonacorsi, D; Braibant-Giacomelli, S; Cafaro, V D; Caiazza, S S; Capiluppi, P; Castro, A; Cavallo, F R; Codispoti, G; Cuffiani, M; D'Antone, I; Dallavalle, G M; Fabbri, F; Fanfani, A; Fasanella, D; Giacomelli, P; Giordano, V; Giunta, M; Grandi, C; Guerzoni, M; Marcellini, S; Masetti, G; Montanari, A; Navarria, F L; Odorici, F; Pellegrini, G; Perrotta, A; Rossi, A M; Rovelli, T; Siroli, G; Torromeo, G; Travaglini, R; Albergo, S; Costa, S; Potenza, R; Tricomi, A; Tuve, C; Barbagli, G; Broccolo, G; Ciulli, V; Civinini, C; D'Alessandro, R; Focardi, E; Frosali, S; Gallo, E; Genta, C; Landi, G; Lenzi, P; Meschini, M; Paoletti, S; Sguazzoni, G; Tropiano, A; Benussi, L; Bertani, M; Bianco, S; Colafranceschi, S; Colonna, D; Fabbri, F; Giardoni, M; Passamonti, L; Piccolo, D; Pierluigi, D; Ponzio, B; Russo, A; Fabbricatore, P; Musenich, R; Benaglia, A; Calloni, M; Cerati, G B; D'Angelo, P; De Guio, F; Farina, F M; Ghezzi, A; Govoni, P; Malberti, M; Malvezzi, S; Martelli, A; Menasce, D; Miccio, V; Moroni, L; Negri, P; Paganoni, M; Pedrini, D; Pullia, A; Ragazzi, S; Redaelli, N; Sala, S; Salerno, R; Tabarelli de Fatis, T; Tancini, V; Taroni, S; Buontempo, S; Cavallo, N; Cimmino, A; De Gruttola, M; Fabozzi, F; Iorio, A O M; Lista, L; Lomidze, D; Noli, P; Paolucci, P; Sciacca, C; Azzi, P; Bacchetta, N; Barcellan, L; Bellan, P; Bellato, M; Benettoni, M; Biasotto, M; Bisello, D; Borsato, E; Branca, A; Carlin, R; Castellani, L; Checchia, P; Conti, E; Dal Corso, F; De Mattia, M; Dorigo, T; Dosselli, U; Fanzago, F; Gasparini, F; Gasparini, U; Giubilato, P; Gonella, F; Gresele, A; Gulmini, M; Kaminskiy, A; Lacaprara, S; Lazzizzera, I; Margoni, M; Maron, G; Mattiazzo, S; Mazzucato, M; Meneghelli, M; Meneguzzo, A T; Michelotto, M; Montecassiano, F; Nespolo, M; Passaseo, M; Pegoraro, M; Perrozzi, L; Pozzobon, N; Ronchese, P; Simonetto, F; Toniolo, N; Torassa, E; Tosi, M; Triossi, A; Vanini, S; Ventura, S; Zotto, P; Zumerle, G; Baesso, P; Berzano, U; Bricola, S; Necchi, M M; Pagano, D; Ratti, S P; Riccardi, C; Torre, P; Vicini, A; Vitulo, P; Viviani, C; Aisa, D; Aisa, S; Babucci, E; Biasini, M; Bilei, G M; Caponeri, B; Checcucci, B; Dinu, N; Fanò, L; Farnesini, L; Lariccia, P; Lucaroni, A; Mantovani, G; Nappi, A; Piluso, A; Postolache, V; Santocchia, A; Servoli, L; Tonoiu, D; Vedaee, A; Volpe, R; Azzurri, P; Bagliesi, G; Bernardini, J; Berretta, L; Boccali, T; Bocci, A; Borrello, L; Bosi, F; Calzolari, F; Castaldi, R; Dell'Orso, R; Fiori, F; Foà, L; Gennai, S; Giassi, A; Kraan, A; Ligabue, F; Lomtadze, T; Mariani, F; Martini, L; Massa, M; Messineo, A; Moggi, A; Palla, F; Palmonari, F; Petragnani, G; Petrucciani, G; Raffaelli, F; Sarkar, S; Segneri, G; Serban, A T; Spagnolo, P; Tenchini, R; Tolaini, S; Tonelli, G; Venturi, A; Verdini, P G; Baccaro, S; Barone, L; Bartoloni, A; Cavallari, F; Dafinei, I; Del Re, D; Di Marco, E; Diemoz, M; Franci, D; Longo, E; Organtini, G; Palma, A; Pandolfi, F; Paramatti, R; Pellegrino, F; Rahatlou, S; Rovelli, C; Alampi, G; Amapane, N; Arcidiacono, R; Argiro, S; Arneodo, M; Biino, C; Borgia, M A; Botta, C; Cartiglia, N; Castello, R; Cerminara, G; Costa, M; Dattola, D; Dellacasa, G; Demaria, N; Dughera, G; Dumitrache, F; Graziano, A; Mariotti, C; Marone, M; Maselli, S; Migliore, E; Mila, G; Monaco, V; Musich, M; Nervo, M; Obertino, M M; Oggero, S; Panero, R; Pastrone, N; Pelliccioni, M; Romero, A; Ruspa, M; Sacchi, R; Solano, A; Staiano, A; Trapani, P P; Trocino, D; Vilela Pereira, A; Visca, L; Zampieri, A; Ambroglini, F; Belforte, S; Cossutti, F; Della Ricca, G; Gobbo, B; Penzo, A; Chang, S; Chung, J; Kim, D H; Kim, G N; Kong, D J; Park, H; Son, D C; Bahk, S Y; Song, S; Jung, S Y; Hong, B; Kim, H; Kim, J H; Lee, K S; Moon, D H; Park, S K; Rhee, H B; Sim, K S; Kim, J; Choi, M; Hahn, G; Park, I C; Choi, S; Choi, Y; Goh, J; Jeong, H; Kim, T J; Lee, J; Lee, S; Janulis, M; Martisiute, D; Petrov, P; Sabonis, T; Castilla Valdez, H; Sánchez Hernández, A; Carrillo Moreno, S; Morelos Pineda, A; Allfrey, P; Gray, R N C; Krofcheck, D; Bernardino Rodrigues, N; Butler, P H; Signal, T; Williams, J C; Ahmad, M; Ahmed, I; Ahmed, W; Asghar, M I; Awan, M I M; Hoorani, H R; Hussain, I; Khan, W A; Khurshid, T; Muhammad, S; Qazi, S; Shahzad, H; Cwiok, M; Dabrowski, R; Dominik, W; Doroba, K; Konecki, M; Krolikowski, J; Pozniak, K; Romaniuk, Ryszard; Zabolotny, W; Zych, P; Frueboes, T; Gokieli, R; Goscilo, L; Górski, M; Kazana, M; Nawrocki, K; Szleper, M; Wrochna, G; Zalewski, P; Almeida, N; Antunes Pedro, L; Bargassa, P; David, A; Faccioli, P; Ferreira Parracho, P G; Freitas Ferreira, M; Gallinaro, M; Guerra Jordao, M; Martins, P; Mini, G; Musella, P; Pela, J; Raposo, L; Ribeiro, P Q; Sampaio, S; Seixas, J; Silva, J; Silva, P; Soares, D; Sousa, M; Varela, J; Wöhri, H K; Altsybeev, I; Belotelov, I; Bunin, P; Ershov, Y; Filozova, I; Finger, M; Finger, M., Jr.; Golunov, A; Golutvin, I; Gorbounov, N; Kalagin, V; Kamenev, A; Karjavin, V; Konoplyanikov, V; Korenkov, V; Kozlov, G; Kurenkov, A; Lanev, A; Makankin, A; Mitsyn, V V; Moisenz, P; Nikonov, E; Oleynik, D; Palichik, V; Perelygin, V; Petrosyan, A; Semenov, R; Shmatov, S; Smirnov, V; Smolin, D; Tikhonenko, E; Vasil'ev, S; Vishnevskiy, A; Volodko, A; Zarubin, A; Zhiltsov, V; Bondar, N; Chtchipounov, L; Denisov, A; Gavrikov, Y; Gavrilov, G; Golovtsov, V; Ivanov, Y; Kim, V; Kozlov, V; Levchenko, P; Obrant, G; Orishchin, E; Petrunin, A; Shcheglov, Y; Shchetkovskiy, A; Sknar, V; Smirnov, I; Sulimov, V; Tarakanov, V; Uvarov, L; Vavilov, S; Velichko, G; Volkov, S; Vorobyev, A; Andreev, Yu; Anisimov, A; Antipov, P; Dermenev, A; Gninenko, S; Golubev, N; Kirsanov, M; Krasnikov, N; Matveev, V; Pashenkov, A; Postoev, V E; Solovey, A; Toropin, A; Troitsky, S; Baud, A; Epshteyn, V; Gavrilov, V; Ilina, N; Kaftanov, V; Kolosov, V; Kossov, M; Krokhotin, A; Kuleshov, S; Oulianov, A; Safronov, G; Semenov, S; Shreyber, I; Stolin, V; Vlasov, E; Zhokin, A; Boos, E; Dubinin, M; Dudko, L; Ershov, A; Gribushin, A; Klyukhin, V; Kodolova, O; Lokhtin, I; Petrushanko, S; Sarycheva, L; Savrin, V; Snigirev, A; Vardanyan, I; Dremin, I; Kirakosyan, M; Konovalova, N; Rusakov, S V; Vinogradov, A; Akimenko, S; Artamonov, A; Azhgirey, I; Bitioukov, S; Burtovoy, V; Grishin, V; Kachanov, V; Konstantinov, D; Krychkine, V; Levine, A; Lobov, I; Lukanin, V; Mel'nik, Y; Petrov, V; Ryutin, R; Slabospitsky, S; Sobol, A; Sytine, A; Tourtchanovitch, L; Troshin, S; Tyurin, N; Uzunian, A; Volkov, A; Adzic, P; Djordjevic, M; Jovanovic, D; Krpic, D; Maletic, D; Puzovic, J; Smiljkovic, N; Aguilar-Benitez, M; Alberdi, J; Alcaraz Maestre, J; Arce, P; Barcala, J M; Battilana, C; Burgos Lazaro, C; Caballero Bejar, J; Calvo, E; Cardenas Montes, M; Cepeda, M; Cerrada, M; Chamizo Llatas, M; Clemente, F; Colino, N; Daniel, M; De La Cruz, B; Delgado Peris, A; Diez Pardos, C; Fernandez Bedoya, C; Fernández Ramos, J P; Ferrando, A; Flix, J; Fouz, M C; Garcia-Abia, P; Garcia-Bonilla, A C; Gonzalez Lopez, O; Goy Lopez, S; Hernandez, J M; Josa, M I; Marin, J; Merino, G; Molina, J; Molinero, A; Navarrete, J J; Oller, J C; Puerta Pelayo, J; Romero, L; Santaolalla, J; Villanueva Munoz, C; Willmott, C; Yuste, C; Albajar, C; Blanco Otano, M; de Trocóniz, J F; Garcia Raboso, A; Lopez Berengueres, J O; Cuevas, J; Fernandez Menendez, J; Gonzalez Caballero, I; Lloret Iglesias, L; Naves Sordo, H; Vizan Garcia, J M; Cabrillo, I J; Calderon, A; Chuang, S H; Diaz Merino, I; Diez Gonzalez, C; Duarte Campderros, J; Fernandez, M; Gomez, G; Gonzalez Sanchez, J; Gonzalez Suarez, R; Jorda, C; Lobelle Pardo, P; Lopez Virto, A; Marco, J; Marco, R; Martinez Rivero, C; Martinez Ruiz del Arbol, P; Matorras, F; Rodrigo, T; Ruiz Jimeno, A; Scodellaro, L; Sobron Sanudo, M; Vila, I; Vilar Cortabitarte, R; Abbaneo, D; Albert, E; Alidra, M; Ashby, S; Auffray, E; Baechler, J; Baillon, P; Ball, A H; Bally, S L; Barney, D; Beaudette, F; Bellan, R; Benedetti, D; Benelli, G; Bernet, C; Bloch, P; Bolognesi, S; Bona, M; Bos, J; Bourgeois, N; Bourrel, T; Breuker, H; Bunkowski, K; Campi, D; Camporesi, T; Cano, E; Cattai, A; Chatelain, J P; Chauvey, M; Christiansen, T; Coarasa Perez, J A; Conde Garcia, A; Covarelli, R; Curé, B; De Roeck, A; Delachenal, V; Deyrail, D; Di Vincenzo, S; Dos Santos, S; Dupont, T; Edera, L M; Elliott-Peisert, A; Eppard, M; Favre, M; Frank, N; Funk, W; Gaddi, A; Gastal, M; Gateau, M; Gerwig, H; Gigi, D; Gill, K; Giordano, D; Girod, J P; Glege, F; Gomez-Reino Garrido, R; Goudard, R; Gowdy, S; Guida, R; Guiducci, L; Gutleber, J; Hansen, M; Hartl, C; Harvey, J; Hegner, B; Hoffmann, H F; Holzner, A; Honma, A; Huhtinen, M; Innocente, V; Janot, P; Le Godec, G; Lecoq, P; Leonidopoulos, C; Loos, R; Lourenço, C; Lyonnet, A; Macpherson, A; Magini, N; Maillefaud, J D; Maire, G; Mäki, T; Malgeri, L; Mannelli, M; Masetti, L; Meijers, F; Meridiani, P; Mersi, S; Meschi, E; Meynet Cordonnier, A; Moser, R; Mulders, M; Mulon, J; Noy, M; Oh, A; Olesen, G; Onnela, A; Orimoto, T; Orsini, L; Perez, E; Perinic, G; Pernot, J F; Petagna, P; Petiot, P; Petrilli, A; Pfeiffer, A; Pierini, M; Pimiä, M; Pintus, R; Pirollet, B; Postema, H; Racz, A; Ravat, S; Rew, S B; Rodrigues Antunes, J; Rolandi, G.; Rovere, M; Ryjov, V; Sakulin, H; Samyn, D; Sauce, H; Schäfer, C; Schlatter, W D; Schröder, M; Schwick, C; Sciaba, A; Segoni, I; Sharma, A; Siegrist, N; Siegrist, P; Sinanis, N; Sobrier, T; Sphicas, P; Spiga, D; Spiropulu, M; Stöckli, F; Traczyk, P; Tropea, P; Troska, J; Tsirou, A; Veillet, L; Veres, G I; Voutilainen, M; Wertelaers, P; Zanetti, M; Bertl, W; Deiters, K; Erdmann, W; Gabathuler, K; Horisberger, R; Ingram, Q; Kaestli, H C; König, S; Kotlinski, D; Langenegger, U; Meier, F; Renker, D; Rohe, T; Sibille, J; Starodumov, A; Betev, B; Caminada, L; Chen, Z; Cittolin, S; Da Silva Di Calafiori, D R; Dambach, S; Dissertori, G; Dittmar, M; Eggel, C; Eugster, J; Faber, G; Freudenreich, K; Grab, C; Hervé, A; Hintz, W; Lecomte, P; Luckey, P D; Lustermann, W; Marchica, C; Milenovic, P; Moortgat, F; Nardulli, A; Nessi-Tedaldi, F; Pape, L; Pauss, F; Punz, T; Rizzi, A; Ronga, F J; Sala, L; Sanchez, A K; Sawley, M C; Sordini, V; Stieger, B; Tauscher, L; Thea, A; Theofilatos, K; Treille, D; Trüb, P; Weber, M; Wehrli, L; Weng, J; Zelepoukine, S; Amsler, C; Chiochia, V; De Visscher, S; Regenfus, C; Robmann, P; Rommerskirchen, T; Schmidt, A; Tsirigkas, D; Wilke, L; Chang, Y H; Chen, E A; Chen, W T; Go, A; Kuo, C M; Li, S W; Lin, W; Bartalini, P; Chang, P; Chao, Y; Chen, K F; Hou, W S; Hsiung, Y; Lei, Y J; Lin, S W; Lu, R S; Schümann, J; Shiu, J G; Tzeng, Y M; Ueno, K; Velikzhanin, Y; Wang, C C; Wang, M; Adiguzel, A; Ayhan, A; Azman Gokce, A; Bakirci, M N; Cerci, S; Dumanoglu, I; Eskut, E; Girgis, S; Gurpinar, E; Hos, I; Karaman, T; Kayis Topaksu, A; Kurt, P; Önengüt, G; Önengüt Gökbulut, G; Ozdemir, K; Ozturk, S; Polatöz, A; Sogut, K; Tali, B; Topakli, H; Uzun, D; Vergili, L N; Vergili, M; Akin, I V; Aliev, T; Bilmis, S; Deniz, M; Gamsizkan, H; Guler, A M; Öcalan, K; Serin, M; Sever, R; Surat, U E; Zeyrek, M; Deliomeroglu, M; Demir, D; Gülmez, E; Halu, A; Isildak, B; Kaya, M; Kaya, O; Ozkorucuklu, S; Sonmez, N; Levchuk, L; Lukyanenko, S; Soroka, D; Zub, S; Bostock, F; Brooke, J J; Cheng, T L; Cussans, D; Frazier, R; Goldstein, J; Grant, N; Hansen, M; Heath, G P; Heath, H F; Hill, C; Huckvale, B; Jackson, J; Mackay, C K; Metson, S; Newbold, D M; Nirunpong, K; Smith, V J; Velthuis, J; Walton, R; Bell, K W; Brew, C; Brown, R M; Camanzi, B; Cockerill, D J A; Coughlan, J A; Geddes, N I; Harder, K; Harper, S; Kennedy, B W; Murray, P; Shepherd-Themistocleous, C H; Tomalin, I R; Williams, J H; Womersley, W J; Worm, S D; Bainbridge, R; Ball, G; Ballin, J; Beuselinck, R; Buchmuller, O; Colling, D; Cripps, N; Davies, G; Della Negra, M; Foudas, C; Fulcher, J; Futyan, D; Hall, G; Hays, J; Iles, G; Karapostoli, G; MacEvoy, B C; Magnan, A M; Marrouche, J; Nash, J; Nikitenko, A; Papageorgiou, A; Pesaresi, M; Petridis, K; Pioppi, M; Raymond, D M; Rompotis, N; Rose, A; Ryan, M J; Seez, C; Sharp, P; Sidiropoulos, G; Stettler, M; Stoye, M; Takahashi, M; Tapper, A; Timlin, C; Tourneur, S; Vazquez Acosta, M; Virdee, T; Wakefield, S; Wardrope, D; Whyntie, T; Wingham, M; Cole, J E; Goitom, I; Hobson, P R; Khan, A; Kyberd, P; Leslie, D; Munro, C; Reid, I D; Siamitros, C; Taylor, R; Teodorescu, L; Yaselli, I; Bose, T; Carleton, M; Hazen, E; Heering, A H; Heister, A; John, J St; Lawson, P; Lazic, D; Osborne, D; Rohlf, J; Sulak, L; Wu, S; Andrea, J; Avetisyan, A; Bhattacharya, S; Chou, J P; Cutts, D; Esen, S; Kukartsev, G; Landsberg, G; Narain, M; Nguyen, D; Speer, T; Tsang, K V; Breedon, R; Calderon De La Barca Sanchez, M; Case, M; Cebra, D; Chertok, M; Conway, J; Cox, P T; Dolen, J; Erbacher, R; Friis, E; Ko, W; Kopecky, A; Lander, R; Lister, A; Liu, H; Maruyama, S; Miceli, T; Nikolic, M; Pellett, D; Robles, J; Searle, M; Smith, J; Squires, M; Stilley, J; Tripathi, M; Vasquez Sierra, R; Veelken, C; Andreev, V; Arisaka, K; Cline, D; Cousins, R; Erhan, S; Hauser, J; Ignatenko, M; Jarvis, C; Mumford, J; Plager, C; Rakness, G; Schlein, P; Tucker, J; Valuev, V; Wallny, R; Yang, X; Babb, J; Bose, M; Chandra, A; Clare, R; Ellison, J A; Gary, J W; Hanson, G; Jeng, G Y; Kao, S C; Liu, F; Liu, H; Luthra, A; Nguyen, H; Pasztor, G; Satpathy, A; Shen, B C; Stringer, R; Sturdy, J; Sytnik, V; Wilken, R; Wimpenny, S; Branson, J G; Dusinberre, E; Evans, D; Golf, F; Kelley, R; Lebourgeois, M; Letts, J; Lipeles, E; Mangano, B; Muelmenstaedt, J; Norman, M; Padhi, S; Petrucci, A; Pi, H; Pieri, M; Ranieri, R; Sani, M; Sharma, V; Simon, S; Würthwein, F; Yagil, A; Campagnari, C; D'Alfonso, M; Danielson, T; Garberson, J; Incandela, J; Justus, C; Kalavase, P; Koay, S A; Kovalskyi, D; Krutelyov, V; Lamb, J; Lowette, S; Pavlunin, V; Rebassoo, F; Ribnik, J; Richman, J; Rossin, R; Stuart, D; To, W; Vlimant, J R; Witherell, M; Apresyan, A; Bornheim, A; Bunn, J; Chiorboli, M; Gataullin, M; Kcira, D; Litvine, V; Ma, Y; Newman, H B; Rogan, C; Timciuc, V; Veverka, J; Wilkinson, R; Yang, Y; Zhang, L; Zhu, K; Zhu, R Y; Akgun, B; Carroll, R; Ferguson, T; Jang, D W; Jun, S Y; Paulini, M; Russ, J; Terentyev, N; Vogel, H; Vorobiev, I; Cumalat, J P; Dinardo, M E; Drell, B R; Ford, W T; Heyburn, B; Luiggi Lopez, E; Nauenberg, U; Stenson, K; Ulmer, K; Wagner, S R; Zang, S L; Agostino, L; Alexander, J; Blekman, F; Cassel, D; Chatterjee, A; Das, S; Gibbons, L K; Heltsley, B; Hopkins, W; Khukhunaishvili, A; Kreis, B; Kuznetsov, V; Patterson, J R; Puigh, D; Ryd, A; Shi, X; Stroiney, S; Sun, W; Teo, W D; Thom, J; Vaughan, J; Weng, Y; Wittich, P; Beetz, C P; Cirino, G; Sanzeni, C; Winn, D; Abdullin, S; Afaq, M A; Albrow, M; Ananthan, B; Apollinari, G; Atac, M; Badgett, W; Bagby, L; Bakken, J A; Baldin, B; Banerjee, S; Banicz, K; Bauerdick, L A T; Beretvas, A; Berryhill, J; Bhat, P C; Biery, K; Binkley, M; Bloch, I; Borcherding, F; Brett, A M; Burkett, K; Butler, J N; Chetluru, V; Cheung, H W K; Chlebana, F; Churin, I; Cihangir, S; Crawford, M; Dagenhart, W; Demarteau, M; Derylo, G; Dykstra, D; Eartly, D P; Elias, J E; Elvira, V D; Evans, D; Feng, L; Fischler, M; Fisk, I; Foulkes, S; Freeman, J; Gartung, P; Gottschalk, E; Grassi, T; Green, D; Guo, Y; Gutsche, O; Hahn, A; Hanlon, J; Harris, R M; Holzman, B; Howell, J; Hufnagel, D; James, E; Jensen, H; Johnson, M; Jones, C D; Joshi, U; Juska, E; Kaiser, J; Klima, B; Kossiakov, S; Kousouris, K; Kwan, S; Lei, C M; Limon, P; Lopez Perez, J A; Los, S; Lueking, L; Lukhanin, G; Lusin, S; Lykken, J; Maeshima, K; Marraffino, J M; Mason, D; McBride, P; Miao, T; Mishra, K; Moccia, S; Mommsen, R; Mrenna, S; Muhammad, A S; Newman-Holmes, C; Noeding, C; O'Dell, V; Prokofyev, O; Rivera, R; Rivetta, C H; Ronzhin, A; Rossman, P; Ryu, S; Sekhri, V; Sexton-Kennedy, E; Sfiligoi, I; Sharma, S; Shaw, T M; Shpakov, D; Skup, E; Smith, R P; Soha, A; Spalding, W J; Spiegel, L; Suzuki, I; Tan, P; Tanenbaum, W; Tkaczyk, S; Trentadue, R; Uplegger, L; Vaandering, E W; Vidal, R; Whitmore, J; Wicklund, E; Wu, W; Yarba, J; Yumiceva, F; Yun, J C; Acosta, D; Avery, P; Barashko, V; Bourilkov, D; Chen, M; Di Giovanni, G P; Dobur, D; Drozdetskiy, A; Field, R D; Fu, Y; Furic, I K; Gartner, J; Holmes, D; Kim, B; Klimenko, S; Konigsberg, J; Korytov, A; Kotov, K; Kropivnitskaya, A; Kypreos, T; Madorsky, A; Matchev, K; Mitselmakher, G; Pakhotin, Y; Piedra Gomez, J; Prescott, C; Rapsevicius, V; Remington, R; Schmitt, M; Scurlock, B; Wang, D; Yelton, J; Ceron, C; Gaultney, V; Kramer, L; Lebolo, L M; Linn, S; Markowitz, P; Martinez, G; Rodriguez, J L; Adams, T; Askew, A; Baer, H; Bertoldi, M; Chen, J; Dharmaratna, W G D; Gleyzer, S V; Haas, J; Hagopian, S; Hagopian, V; Jenkins, M; Johnson, K F; Prettner, E; Prosper, H; Sekmen, S; Baarmand, M M; Guragain, S; Hohlmann, M; Kalakhety, H; Mermerkaya, H; Ralich, R; Vodopiyanov, I; Abelev, B; Adams, M R; Anghel, I M; Apanasevich, L; Bazterra, V E; Betts, R R; Callner, J; Castro, M A; Cavanaugh, R; Dragoiu, C; Garcia-Solis, E J; Gerber, C E; Hofman, D J; Khalatian, S; Mironov, C; Shabalina, E; Smoron, A; Varelas, N; Akgun, U; Albayrak, E A; Ayan, A S; Bilki, B; Briggs, R; Cankocak, K; Chung, K; Clarida, W; Debbins, P; Duru, F; Ingram, F D; Lae, C K; McCliment, E; Merlo, J P; Mestvirishvili, A; Miller, M J; Moeller, A; Nachtman, J; Newsom, C R; Norbeck, E; Olson, J; Onel, Y; Ozok, F; Parsons, J; Schmidt, I; Sen, S; Wetzel, J; Yetkin, T; Yi, K; Barnett, B A; Blumenfeld, B; Bonato, A; Chien, C Y; Fehling, D; Giurgiu, G; Gritsan, A V; Guo, Z J; Maksimovic, P; Rappoccio, S; Swartz, M; Tran, N V; Zhang, Y; Baringer, P; Bean, A; Grachov, O; Murray, M; Radicci, V; Sanders, S; Wood, J S; Zhukova, V; Bandurin, D; Bolton, T; Kaadze, K; Liu, A; Maravin, Y; Onoprienko, D; Svintradze, I; Wan, Z; Gronberg, J; Hollar, J; Lange, D; Wright, D; Baden, D; Bard, R; Boutemeur, M; Eno, S C; Ferencek, D; Hadley, N J; Kellogg, R G; Kirn, M; Kunori, S; Rossato, K; Rumerio, P; Santanastasio, F; Skuja, A; Temple, J; Tonjes, M B; Tonwar, S C; Toole, T; Twedt, E; Alver, B; Bauer, G; Bendavid, J; Busza, W; Butz, E; Cali, I A; Chan, M; D'Enterria, D; Everaerts, P; Gomez Ceballos, G; Hahn, K A; Harris, P; Jaditz, S; Kim, Y; Klute, M; Lee, Y J; Li, W; Loizides, C; Ma, T; Miller, M; Nahn, S; Paus, C; Roland, C; Roland, G; Rudolph, M; Stephans, G; Sumorok, K; Sung, K; Vaurynovich, S; Wenger, E A; Wyslouch, B; Xie, S; Yilmaz, Y; Yoon, A S; Bailleux, D; Cooper, S I; Cushman, P; Dahmes, B; De Benedetti, A; Dolgopolov, A; Dudero, P R; Egeland, R; Franzoni, G; Haupt, J; Inyakin, A; Klapoetke, K; Kubota, Y; Mans, J; Mirman, N; Petyt, D; Rekovic, V; Rusack, R; Schroeder, M; Singovsky, A; Zhang, J; Cremaldi, L M; Godang, R; Kroeger, R; Perera, L; Rahmat, R; Sanders, D A; Sonnek, P; Summers, D; Bloom, K; Bockelman, B; Bose, S; Butt, J; Claes, D R; Dominguez, A; Eads, M; Keller, J; Kelly, T; Kravchenko, I; Lazo-Flores, J; Lundstedt, C; Malbouisson, H; Malik, S; Snow, G R; Baur, U; Iashvili, I; Kharchilava, A; Kumar, A; Smith, K; Strang, M; Alverson, G; Barberis, E; Boeriu, O; Eulisse, G; Govi, G; McCauley, T; Musienko, Y; Muzaffar, S; Osborne, I; Paul, T; Reucroft, S; Swain, J; Taylor, L; Tuura, L; Anastassov, A; Gobbi, B; Kubik, A; Ofierzynski, R A; Pozdnyakov, A; Schmitt, M; Stoynev, S; Velasco, M; Won, S; Antonelli, L; Berry, D; Hildreth, M; Jessop, C; Karmgard, D J; Kolberg, T; Lannon, K; Lynch, S; Marinelli, N; Morse, D M; Ruchti, R; Slaunwhite, J; Warchol, J; Wayne, M; Bylsma, B; Durkin, L S; Gilmore, J; Gu, J; Killewald, P; Ling, T Y; Williams, G; Adam, N; Berry, E; Elmer, P; Garmash, A; Gerbaudo, D; Halyo, V; Hunt, A; Jones, J; Laird, E; Marlow, D; Medvedeva, T; Mooney, M; Olsen, J; Piroué, P; Stickland, D; Tully, C; Werner, J S; Wildish, T; Xie, Z; Zuranski, A; Acosta, J G; Bonnett Del Alamo, M; Huang, X T; Lopez, A; Mendez, H; Oliveros, S; Ramirez Vargas, J E; Santacruz, N; Zatzerklyany, A; Alagoz, E; Antillon, E; Barnes, V E; Bolla, G; Bortoletto, D; Everett, A; Garfinkel, A F; Gecse, Z; Gutay, L; Ippolito, N; Jones, M; Koybasi, O; Laasanen, A T; Leonardo, N; Liu, C; Maroussov, V; Merkel, P; Miller, D H; Neumeister, N; Sedov, A; Shipsey, I; Yoo, H D; Zheng, Y; Jindal, P; Parashar, N; Cuplov, V; Ecklund, K M; Geurts, F J M; Liu, J H; Maronde, D; Matveev, M; Padley, B P; Redjimi, R; Roberts, J; Sabbatini, L; Tumanov, A; Betchart, B; Bodek, A; Budd, H; Chung, Y S; de Barbaro, P; Demina, R; Flacher, H; Gotra, Y; Harel, A; Korjenevski, S; Miner, D C; Orbaker, D; Petrillo, G; Vishnevskiy, D; Zielinski, M; Bhatti, A; Demortier, L; Goulianos, K; Hatakeyama, K; Lungu, G; Mesropian, C; Yan, M; Atramentov, O; Bartz, E; Gershtein, Y; Halkiadakis, E; Hits, D; Lath, A; Rose, K; Schnetzer, S; Somalwar, S; Stone, R; Thomas, S; Watts, T L; Cerizza, G; Hollingsworth, M; Spanier, S; Yang, Z C; York, A; Asaadi, J; Aurisano, A; Eusebi, R; Golyash, A; Gurrola, A; Kamon, T; Nguyen, C N; Pivarski, J; Safonov, A; Sengupta, S; Toback, D; Weinberger, M; Akchurin, N; Berntzon, L; Gumus, K; Jeong, C; Kim, H; Lee, S W; Popescu, S; Roh, Y; Sill, A; Volobouev, I; Washington, E; Wigmans, R; Yazgan, E; Engh, D; Florez, C; Johns, W; Pathak, S; Sheldon, P; Andelin, D; Arenton, M W; Balazs, M; Boutle, S; Buehler, M; Conetti, S; Cox, B; Hirosky, R; Ledovskoy, A; Neu, C; Phillips II, D; Ronquest, M; Yohay, R; Gollapinni, S; Gunthoti, K; Harr, R; Karchin, P E; Mattson, M; Sakharov, A; Anderson, M; Bachtis, M; Bellinger, J N; Carlsmith, D; Crotty, I; Dasu, S; Dutta, S; Efron, J; Feyzi, F; Flood, K; Gray, L; Grogg, K S; Grothe, M; Hall-Wilton, R; Jaworski, M; Klabbers, P; Klukas, J; Lanaro, A; Lazaridis, C; Leonard, J; Loveless, R; Magrans de Abril, M; Mohapatra, A; Ott, G; Polese, G; Reeder, D; Savin, A; Smith, W H; Sourkov, A; Swanson, J; Weinberg, M; Wenman, D; Wensveen, M; White, A

    2010-01-01

    During autumn 2008, the Silicon Strip Tracker was operated with the full CMS experiment in a comprehensive test, in the presence of the 3.8 T magnetic field produced by the CMS superconducting solenoid. Cosmic ray muons were detected in the muon chambers and used to trigger the readout of all CMS sub-detectors. About 15 million events with a muon in the tracker were collected. The efficiency of hit and track reconstruction were measured to be higher than 99% and consistent with expectations from Monte Carlo simulation. This article details the commissioning and performance of the Silicon Strip Tracker with cosmic ray muons.

  11. Stand-alone Cosmic Muon Reconstruction Before Installation of the CMS Silicon Strip Tracker

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruhwirth, R.; Hansel, S.; Hrubec, J.; Krammer, M.; Oberegger, M.; Pernicka, M.; Schmid, S.; Stark, R.; Steininger, H.; Uhl, D.; Waltenberger, W.; Widl, E.; Van Mechelen, P.; Cardaci, M.; Beaumont, W.; de Langhe, E.; de Wolf, E.A.; Delmeire, E.; Hashemi, M.; Bouhali, O.; Charaf, O.; Clerbaux, B.; Dewulf, J.-P.; Elgammal, S.; Hammad, G.; de Lentdecker, G.; Marage, P.; Vander Velde, C.; Vanlaer, P.; Wickens, J.; Adler, V.; Devroede, O.; De Weirdt, S.; D'Hondt, J.; Goorens, R.; Heyninck, J.; Maes, J.; Mozer, Matthias Ulrich; Tavernier, S.; Van Lancker, L.; Van Mulders, P.; Villella, I.; Wastiels, C.; Bonnet, J.-L.; Bruno, G.; De Callatay, B.; Florins, B.; Giammanco, A.; Gregoire, G.; Keutgen, Th.; Kcira, D.; Lemaitre, V.; Michotte, D.; Militaru, O.; Piotrzkowski, K.; Quertermont, L.; Roberfroid, V.; Rouby, X.; Teyssier, D.; Daubie, E.; Anttila, E.; Czellar, S.; Engstrom, P.; Harkonen, J.; Karimaki, V.; Kostesmaa, J.; Kuronen, A.; Lampen, T.; Linden, T.; Luukka, P.-R.; Maenpaa, T.; Michal, S.; Tuominen, E.; Tuominiemi, J.; Ageron, M.; Baulieu, G.; Bonnevaux, A.; Boudoul, G.; Chabanat, E.; Chabert, E.; Chierici, R.; Contardo, D.; Della Negra, R.; Dupasquier, T.; Gelin, G.; Giraud, N.; Guillot, G.; Estre, N.; Haroutunian, R.; Lumb, N.; Perries, S.; Schirra, F.; Trocme, B.; Vanzetto, S.; Agram, J.-L.; Blaes, R.; Drouhin, F.; Ernenwein, J.-P.; Fontaine, J.-C.; Berst, J.-D.; Brom, J.-M.; Didierjean, F.; Goerlach, U.; Graehling, P.; Gross, L.; Hosselet, J.; Juillot, P.; Lounis, A.; Maazouzi, C.; Olivetto, C.; Strub, R.; Van Hove, P.; Anagnostou, G.; Brauer, R.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Kukulies, C.; Olzem, J.; Ostapchuk, A.; Pandoulas, D.; Pierschel, G.; Raupach, F.; Schael, S.; Schwering, G.; Sprenger, D.; Thomas, M.; Weber, M.; Wittmer, B.; Wlochal, M.; Beissel, F.; Bock, E.; Flugge, G.; Gillissen, C.; Hermanns, T.; Heydhausen, D.; Jahn, D.; Kaussen, G.; Linn, A.; Perchalla, L.; Poettgens, M.; Pooth, O.; Stahl, A.; Zoeller, M.H.; Buhmann, P.; Butz, E.; Flucke, G.; Hamdorf, R.; Hauk, J.; Klanner, R.; Pein, U.; Schleper, P.; Steinbruck, G.; Blum, P.; De Boer, W.; Dierlamm, A.; Dirkes, G.; Fahrer, M.; Frey, M.; Furgeri, A.; Hartmann, F.; Heier, S.; Hoffmann, K.-H.; Kaminski, J.; Ledermann, B.; Liamsuwan, T.; Muller, S.; Muller, Th.; Schilling, F.-P.; Simonis, H.-J.; Steck, P.; Zhukov, V.; Cariola, P.; De Robertis, G.; Ferorelli, R.; Fiore, L.; Preda, M.; Sala, G.; Silvestris, L.; Tempesta, P.; Zito, G.; Creanza, D.; De Filippis, N.; De Palma, M.; Giordano, D.; Maggi, G.; Manna, N.; My, S.; Selvaggi, G.; Albergo, S.; Chiorboli, M.; Costa, S.; Galanti, M.; Giudice, N.; Guardone, N.; Noto, F.; Potenza, R.; Saizu, M.A.; Sparti, V.; Sutera, C.; Tricomi, A.; Tuve, C.; Brianzi, M.; Civinini, C.; Maletta, F.; Manolescu, F.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Broccolo, B.; Ciulli, V.; D'Alessandro, R.; Focardi, E.; Frosali, S.; Genta, C.; Landi, G.; Lenzi, P.; Macchiolo, A.; Magini, N.; Parrini, G.; Scarlini, E.; Cerati, G.; Azzi, P.; Bacchetta, N.; Candelori, A.; Dorigo, T.; Kaminsky, A.; Karaevski, S.; Khomenkov, V.; Reznikov, S.; Tessaro, M.; Bisello, D.; De Mattia, M.; Giubilato, P.; Loreti, M.; Mattiazzo, S.; Nigro, M.; Paccagnella, A.; Pantano, D.; Pozzobon, N.; Tosi, M.; Bilei, G.M.; Checcucci, B.; Fano, L.; Servoli, L.; Ambroglini, F.; Babucci, E.; Benedetti, D.; Biasini, M.; Caponeri, B.; Covarelli, R.; Giorgi, M.; Lariccia, P.; Mantovani, G.; Marcantonini, M.; Postolache, V.; Santocchia, A.; Spiga, D.; Bagliesi, G.; Balestri, G.; Berretta, L.; Bianucci, S.; Boccali, T.; Bosi, F.; Bracci, F.; Castaldi, R.; Ceccanti, M.; Cecchi, R.; Cerri, C.; Cucoanes, A .S.; Dell'Orso, R.; Dobur, D.; Dutta, S.; Giassi, A.; Giusti, S.; Kartashov, D.; Kraan, A.; Lomtadze, T.; Lungu, G.A.; Magazzu, G.; Mammini, P.; Mariani, F.; Martinelli, G.; Moggi, A.; Palla, F.; Palmonari, F.; Petragnani, G.; Profeti, A.; Raffaelli, F.; Rizzi, D.; Sanguinetti, G.; Sarkar, S.; Sentenac, D.; Serban, A.T.; Slav, A.; Soldani, A.; Spagnolo, P.; Tenchini, R.; Tolaini, S.; Venturi, A.; Verdini, P.G.; Vos, M.; Zaccarelli, L.; Avanzini, C.; Basti, A.; Benucci, L.; Bocci, A.; Cazzola, U.; Fiori, F.; Linari, S.; Massa, M.; Messineo, A.; Segneri, G.; Tonelli, G.; Azzurri, P.; Bernardini, J.; Borrello, L.; Calzolari, F.; Foa, L.; Gennai, S.; Ligabue, F.; Petrucciani, G.; Rizzi, A.; Yang, Z.; Benotto, F.; Demaria, N.; Dumitrache, F.; Farano, R.; Borgia, M.A.; Castello, R.; Costa, M.; Migliore, E.; Romero, A.; Abbaneo, D.; Abbas, M.; Ahmed, I.; Akhtar, I.; Albert, E.; Bloch, C.; Breuker, H.; Butt, S.; Buchmuller, O.; Cattai, A.; Delaere, C.; Delattre, M.; Edera, L.M.; Engstrom, P.; Eppard, M.; Gateau, M.; Gill, K.; Giolo-Nicollerat, A.-S.; Grabit, R.; Honma, A.; Huhtinen, M.; Kloukinas, K.; Kortesmaa, J.; Kottelat, L.J.; Kuronen, A.; Leonardo, N.; Ljuslin, C.; Mannelli, M.; Masetti, L.; Marchioro, A.; Mersi, S.; Michal, S.; Mirabito, L.; Muffat-Joly, J.; Onnela, A.; Paillard, C.; Pal, I.; Pernot, J.F.; Petagna, P.; Petit, P.; Piccut, C.; Pioppi, M.; Postema, H.; Ranieri, R.; Ricci, D.; Rolandi, G.; Ronga, F.; Sigaud, C.; Syed, A.; Siegrist, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vander Donckt, M.; Vasey, F.; Alagoz, E.; Amsler, Claude; Chiochia, V.; Regenfus, Christian; Robmann, P.; Rochet, J.; Rommerskirchen, T.; Schmidt, A.; Steiner, S.; Wilke, L.; Church, I.; Cole, J.; Coughlan, J.; Gay, A.; Taghavi, S.; Tomalin, I.; Bainbridge, R.; Cripps, N.; Fulcher, J.; Hall, G.; Noy, M.; Pesaresi, M.; Radicci, V.; Raymond, D.M.; Sharp, P.; Stoye, M.; Wingham, M.; Zorba, O.; Goitom, I.; Hobson, P.R.; Reid, I.; Teodorescu, L.; Hanson, G.; Jeng, G.-Y.; Liu, H.; Pasztor, G.; Satpathy, A.; Stringer, R.; Mangano, B.; Affolder, K.; Affolder, T.; Allen, A.; Barge, D.; Burke, S.; Callahan, D.; Campagnari, C.; Crook, A.; D'Alfonso, M.; Dietch, J.; Garberson, Jeffrey Ford; Hale, D.; Incandela, H.; Incandela, J.; Jaditz, S.; Kalavase, P.; Kreyer, S.; Kyre, S.; Lamb, J.; Mc Guinness, C.; Mills, C.; Nguyen, H.; Nikolic, M.; Lowette, S.; Rebassoo, F.; Ribnik, J.; Richman, J.; Rubinstein, N.; Sanhueza, S.; Shah, Y.; Simms, L.; Staszak, D.; Stoner, J.; Stuart, D.; Swain, S.; Vlimant, J.-R.; White, D.; Ulmer, K.A.; Wagner, S.R.; Bagby, L.; Bhat, P.C.; Burkett, K.; Cihangir, S.; Gutsche, O.; Jensen, H.; Johnson, M.; Luzhetskiy, N.; Mason, D.; Miao, T.; Moccia, S.; Noeding, C.; Ronzhin, A.; Skup, E.; Spalding, W.J.; Spiegel, L.; Tkaczyk, S.; Yumiceva, F.; Zatserklyaniy, A.; Zerev, E.; Anghel, I.; Bazterra, V.E.; Gerber, C.E.; Khalatian, S.; Shabalina, E.; Baringer, Philip S.; Bean, A.; Chen, J.; Hinchey, C.; Martin, C.; Moulik, T.; Robinson, R.; Gritsan, A.V.; Lae, C.K.; Tran, N.V.; Everaerts, P.; Hahn, K.A.; Harris, P.; Nahn, S.; Rudolph, M.; Sung, K.; Betchart, B.; Demina, R.; Gotra, Y.; Korjenevski, S.; Miner, D.; Orbaker, D.; Christofek, L.; Hooper, R.; Landsberg, G.; Nguyen, D.; Narain, M.; Speer, T.; Tsang, K.V.

    2009-01-01

    The subsystems of the CMS silicon strip tracker were integrated and commissioned at the Tracker Integration Facility (TIF) in the period from November 2006 to July 2007. As part of the commissioning, large samples of cosmic ray data were recorded under various running conditions in the absence of a magnetic field. Cosmic rays detected by scintillation counters were used to trigger the readout of up to 15% of the final silicon strip detector, and over 4.7 million events were recorded. This document describes the cosmic track reconstruction and presents results on the performance of track and hit reconstruction as from dedicated analyses.

  12. Dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating

    DEFF Research Database (Denmark)

    Guo, Kai; Christensen, Jesper B.; Christensen, Erik N.

    2017-01-01

    We numerically demonstrate dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating using a finite-difference mode solver. The proposed structure exhibits spectrally-flattened near-zero anomalous dispersion within the telecom wavelength range. We also numerica......We numerically demonstrate dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating using a finite-difference mode solver. The proposed structure exhibits spectrally-flattened near-zero anomalous dispersion within the telecom wavelength range. We also...

  13. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  14. Noise analysis due to strip resistance in the ATLAS SCT silicon strip module

    International Nuclear Information System (INIS)

    Kipnis, I.

    1996-08-01

    The module is made out of four 6 cm x 6 cm single sided Si microstrip detectors. Two detectors are butt glued to form a 12 cm long mechanical unit and strips of the two detectors are electrically connected to form 12 cm long strips. The butt gluing is followed by a back to back attachment. The module in this note is the Rφ module where the electronics is oriented parallel to the strip direction and bonded directly to the strips. This module concept provides the maximum signal-to-noise ratio, particularly when the front-end electronics is placed near the middle rather than at the end. From the noise analysis, it is concluded that the worst-case ΔENC (far-end injection) between end- and center-tapped modules will be 120 to 210 el. rms (9 to 15%) for a non-irradiated detector and 75 to 130 el. rms (5 to 9%) for an irradiated detector, for a metal strip resistance of 10 to 20 Ω/cm

  15. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  16. Cross-talk studies on FPCB of double-sided silicon micro-strip detector

    International Nuclear Information System (INIS)

    Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

    2014-01-01

    Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

  17. Experimentally validated dispersion tailoring in a silicon strip waveguide with alumina thin-film coating

    DEFF Research Database (Denmark)

    Guo, Kai; Christensen, Jesper Bjerge; Shi, Xiaodong

    2018-01-01

    We propose a silicon strip waveguide structure with alumina thin-film coating in-between the core and the cladding for group-velocity dispersion tailoring. By carefully designing the core dimension and the coating thickness, a spectrally-flattened near-zero anomalous group-velocity dispersion...

  18. A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

    Energy Technology Data Exchange (ETDEWEB)

    Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

    1993-05-01

    A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

  19. The Strip Silicon Photo-Multiplier: An innovation for enhanced time and position measurement

    Energy Technology Data Exchange (ETDEWEB)

    Doroud, K., E-mail: Katayoun.Doroud@cern.ch [CERN, Geneva (Switzerland); Williams, M.C.S. [CERN, Geneva (Switzerland); INFN, Bologna (Italy); Yamamoto, K. [Solid State Division, Hamamatsu Photonics K.K., Hamamatsu (Japan)

    2017-05-01

    There is considerable R&D concerning precise time measurement from a variety of detectors, and in particular for the Silicon PhotoMultiplier (SiPM). In this paper we discuss a new geometry for the SiPM in the form of a strip. A strip can be read out at both end, with each end coupled to an individual TDC (time to digital converter). The time difference is related to the position of the firing SPAD along the length of the strip, while the average of the two times gives the time of the hit. Results from the testing of the first prototype Strip SiPMs are presented in this paper.

  20. Interference coupling mechanisms in Silicon Strip Detectors - CMS tracker "wings" A learned lesson for SLHC

    CERN Document Server

    Arteche, F; Rivetta, C

    2009-01-01

    The identification of coupling mechanisms between noise sources and sensitive areas of the front-end electronics (FEE) in the previous CMS tracker sub-system is critical to optimize the design and integration of integrated circuits, sensors and power distribution circuitry for the proposed SLHC Silicon Strip Tracker systems. This paper presents a validated model of the noise sensitivity observed in the Silicon Strip Detector-FEE of the CMS tracker that allows quantifying both the impact of the noise coupling mechanisms and the system immunity against electromagnetic interferences. This model has been validated based on simulations using finite element models and immunity tests conducted on prototypes of the Silicon Tracker End-Caps (TEC) and Outer Barrel (TOB) systems. The results of these studies show important recommendations and criteria to be applied in the design of future detectors to increase the immunity against electromagnetic noise.

  1. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

  2. Fabrication of silicon strip detectors using a step-and-repeat lithography system

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    In this work we describe the use of a step-and-repeat lithography system (stepper) for the fabrication of silicon strip detectors. Although the field size of the stepper is only 20 mm in diameter, we have fabricated much larger detectors by printing a repetitive strip detector pattern in a step-and-repeat fashion. The basic unit cell is 7 mm in length. The stepper employs a laser interferometer for stage placement, and the resulting high precision allows one to accurately place the repetitive patterns on the wafer. A small overlap between the patterns ensures a continuous strip. A detector consisting of 512 strips on a 50 μm pitch has been fabricated using this technique. The dimensions of the detector are 6.3 cm by 2.56 cm. Yields of over 99% have been achieved, where yield is defined as the percentage of strips with reverse leakage current below 1 nA. In addition to the inherent advantages of a step-and-repeat system, this technique offers great flexibility in the fabrication of large-area strip detectors since the length and width of the detector can be changed by simply reprogramming the stepper computer. Hence various geometry strip detectors can be fabricated with only one set of masks, as opposed to a separate set of masks for each geometry as would be required with a contact or proximity aligner

  3. Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

    Science.gov (United States)

    Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

    2018-02-01

    P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

  4. Initial beam test results from a silicon-strip detector with VLSI readout

    International Nuclear Information System (INIS)

    Adolphsen, C.; Litke, A.; Schwarz, A.

    1986-01-01

    Silicon detectors with 256 strips, having a pitch of 25 μm, and connected to two 128 channel NMOS VLSI chips each (Microplex), have been tested in relativistic charged particle beams at CERN and at the Stanford Linear Accelerator Center. The readout chips have an input channel pitch of 47.5 μm and a single multiplexed output which provides voltages proportional to the integrated charge from each strip. The most probable signal height from minimum ionizing tracks was 15 times the rms noise in any single channel. Two-track traversals with a separation of 100 μm were cleanly resolved

  5. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    Peltola, Timo Hannu Tapani

    2014-01-01

    A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

  6. Development of a Compton camera for medical applications based on silicon strip and scintillation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Krimmer, J., E-mail: j.krimmer@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Ley, J.-L. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Abellan, C.; Cachemiche, J.-P. [Aix-Marseille Université, CNRS/IN2P3, CPPM UMR 7346, 13288 Marseille (France); Caponetto, L.; Chen, X.; Dahoumane, M.; Dauvergne, D. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Freud, N. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Joly, B.; Lambert, D.; Lestand, L. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); Létang, J.M. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Magne, M. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); and others

    2015-07-01

    A Compton camera is being developed for the purpose of ion-range monitoring during hadrontherapy via the detection of prompt-gamma rays. The system consists of a scintillating fiber beam tagging hodoscope, a stack of double sided silicon strip detectors (90×90×2 mm{sup 3}, 2×64 strips) as scatter detectors, as well as bismuth germanate (BGO) scintillation detectors (38×35×30 mm{sup 3}, 100 blocks) as absorbers. The individual components will be described, together with the status of their characterization.

  7. Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

    Directory of Open Access Journals (Sweden)

    Torresi D.

    2016-01-01

    Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

  8. Measurement of the spatial resolution of wide-pitch silicon strip detectors with large incident angle

    International Nuclear Information System (INIS)

    Kawasaki, T.; Hazumi, M.; Nagashima, Y.

    1996-01-01

    As a part of R ampersand D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0 degrees to 75 degrees. These detectors have strips with pitches of 50, 125 and 250 μm on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 μm for normal incidence with a pitch of 50 μm, and 29 μm for incident angle of 75 degrees with a pitch of 250μm

  9. Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

    Science.gov (United States)

    Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

    2014-04-01

    There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

  10. Development of microstructure and texture in strip casting grain oriented silicon steel

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang; Xu, Yun-Bo, E-mail: yunbo_xu@126.com; Zhang, Yuan-Xiang; Fang, Feng; Lu, Xiang; Liu, Hai-Tao; Wang, Guo-Dong

    2015-04-01

    Grain oriented silicon steel was produced by strip casting and two-stage cold rolling processes. The development of microstructure and texture was investigated by using optical microscopy, X-ray diffraction and electron backscattered diffraction. It is shown that the microstructure and texture evolutions of strip casting grain oriented silicon steel are significantly distinct from those in the conventional processing route. The as-cast strip is composed of coarse solidification grains and characterized by pronounced 〈001〉//ND texture together with very weak Goss texture. The initial coarse microstructure enhances {111} shear bands formation during the first cold rolling and then leads to the homogeneously distributed Goss grains through the thickness of intermediate annealed sheet. After the secondary cold rolling and primary annealing, strong γ fiber texture with a peak at {111}〈112〉 dominates the primary recrystallization texture, which is beneficial to the abnormal growth of Goss grain during the subsequent high temperature annealing. Therefore, the secondary recrystallization of Goss orientation evolves completely after the high temperature annealing and the grain oriented silicon steel with a good magnetic properties (B{sub 8}=1.94 T, P{sub 1.7/50}=1.3 W/kg) can be prepared. - Highlights: • Grain oriented silicon steel was developed by a novel ultra-short process. • Many evenly distributed Goss “seeds” were originated from cold rolled shear bands. • More MnS inhibitors were obtained due to the rapid cooling of strip casing. • The magnetic induction of grain oriented silicon steel was significantly improved.

  11. The depletion properties of silicon microstrip detectors with variable strip pitch

    International Nuclear Information System (INIS)

    Krizmanic, J.F.

    1994-01-01

    We have investigated the depletion properties of trapezoidal shaped silicon microstrip detectors which have variable strip pitch. Four types of detectors were examined: three detectors have constant strip width and a fourth has a varying strip width. The detectors are single sided with readout performed via p + strips. The depletion properties of the devices were measured using two different methods. The first used capacitance versus voltage measurements, while the second used a 1060 nm wavelength laser coupled to a single mode fiber with a mode field diameter less than 10 μm. The small laser spot size allowed for the depletion depth to be measured in a localized area of the detector. The laser induced charge on an electrode was measured as a function of reverse bias voltage using a sensitive charge preamplifier. The depletion voltages of the detectors demonstrate a strong dependence upon the ratio of strip width to strip pitch. Moreover, these measurements show that a large value of this ratio yields a lower depletion voltage and vice versa. (orig.)

  12. Status of the Silicon Strip Detector at CMS

    CERN Document Server

    Simonis, H J

    2008-01-01

    The CMS Tracker is the world's largest silicon detector. It has only recently been moved underground and installed in the 4T solenoid. Prior to this there has been an intensive testing on the surface, which confirms that the detector system fully meets the design specifications. Irradiation studies with the sensor material shows that the system will survive for at least 10 years in the harsh radiation environment prevailing within the Tracker volume. The planning phase for SLHC as the successor of LHC, with a ten times higher luminosity at the same energy has already begun. First R\\&D studies for more robust detector materials and a new Tracker layout have started.

  13. Investigation of the impact of mechanical stress on the properties of silicon strip sensors

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2017-01-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. The strip sensor module consists of silicon sensors, boards and readout chips. Adhesives are used to connect the modular components thermally and mechanically. It was shown that the silicon sensor is exposed to mechanical stress, due to temperature difference between construction and operation. Mechanical stress can damage the sensor and can change the electrical properties. The thermal induced tensile stress near to the surface of a silicon sensor in a module was simulated and the results are compared to a cooled module. A four point bending setup was used to measure the maximum tensile stress of silicon detectors and to verify the piezoresistive effects on two recent development sensor types used in ATLAS (ATLAS07 and ATLAS12). Changes in the interstrip, bulk and bias resistance and capacitance as well as the coupling capacitance and the implant resistance were measured. The Leakage current was observed to decreas...

  14. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

    2015-04-23

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

  15. Degradation of charge sharing after neutron irradiation in strip silicon detectors with different geometries

    International Nuclear Information System (INIS)

    Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Huse, T.; Tsurin, I.; Wormald, M.

    2013-01-01

    The aim of the CERN/RD50 collaboration is the improvement of the radiation tolerance of semiconductor detectors for future experiments at high-luminosity colliders. In the RD50 framework, evidence of enhanced signal charge in severely irradiated silicon detectors (diodes, segmented planar and 3D devices) was found. The underlying mechanism was labelled charge multiplication. This has been one of the most exciting results from the research activity of RD50 because it could allow for a greatly extended radiation tolerance, if the mechanism is to be found controllable and tuneable. The charge multiplication mechanism is governed by impact ionisation from electrons drifting in high electric field. The electric field profile is influenced by the geometry of the implanted electrodes. In order to investigate the influence of the diode implantation geometry on charge multiplication, the RD50 collaboration has commissioned the production of miniature microstrip silicon sensors with various choices of strip pitch and strip width over pitch (w/p) ratios. Moreover, some of the sensors were produced interleaving readout strips with dummy intermediate ones in order to modify the electric field profile. These geometrical solutions can influence both charge multiplication and charge sharing between adjacent strips. The initial results of this study are here presented

  16. A fast ADC system for silicon μstrips readout

    International Nuclear Information System (INIS)

    Inzani, P.; Pedrini, D.; Sala, S.

    1986-01-01

    A new fast ADC module has been designed. It is part of a large readout system for a high resolution vertex detector consisting of 12 silicon microstrip planes with more than 8000 channels. The module employs a set of monolithic gated integrators on input (LeCroy MIQ 401) multiplexed on a single 8 bit FADC (Thompson EFX8308). A built-in preprocessing, performed through look up tables, accomplishes equalization and reduction of the data and makes high level trigger feasible. As an additional feature, fast histogramming of all the channels in parallel has been made possible with an internal memory. Special care has been paid to realize a low cost and low power consumption system

  17. Studies on the application of silicon strip counters in the ELAN experiment

    International Nuclear Information System (INIS)

    Listl, R.

    1989-02-01

    In this thesis it had to be shown whether it is possible to perform at the external electron beam at ELSA with its high background particle identification and track reconstruction with a strip counter. In order to have an as good as possible separation between true and false events a coincidence apparture was constructed. Because the signals which the strip counter yields are very small, it had to be provided that all disturbing signals are suppressed. The evaluation shows that by means of the taken measures coincident events can be well separated from background events. In 60% of all events a unique assignment of the event to only one strip is possible. The random rate can be reduced by additional detectors and the by this possible track reconstruction. By improvement of the duty cycle here a further improvement should arise. It is thus possible to perform with a silicon strip counter measurements at the ELAN experiment. By this the possibility results to improve the start-position resolution, the start-angle measurement, and the momentum reconstruction by this, that now a point (track) near to the target can be obtained. If the strip counter is added to the trigger one has a quite strong suppression of the background. (orig./HSI) [de

  18. Study of the effects of neutron irradiation on silicon strip detectors

    International Nuclear Information System (INIS)

    Giubellino, P.; Panizza, G.; Hall, G.; Sotthibandhu, S.; Ziock, H.J.; Ferguson, P.; Sommer, W.F.; Edwards, M.; Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O'Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.

    1992-01-01

    Silicon strip detectors and test structures were exposed to neutron fluences up to Φ=6.1x10 14 n/cm 2 , using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ∝2.0x10 13 n/cm 2 , a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.)

  19. Study of the effects of neutron irradiation on silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Giubellino, P.; Panizza, G. (INFN Torino (Italy)); Hall, G.; Sotthibandhu, S. (Imperial Coll., London (United Kingdom)); Ziock, H.J.; Ferguson, P.; Sommer, W.F. (Los Alamos National Lab., NM (United States)); Edwards, M. (Rutherford Appleton Lab., Chilton (United Kingdom)); Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O' Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. (Santa Cruz Inst. for Particle Physics, Univ. California, CA (United States))

    1992-05-01

    Silicon strip detectors and test structures were exposed to neutron fluences up to {Phi}=6.1x10{sup 14} n/cm{sup 2}, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of {proportional to}2.0x10{sup 13} n/cm{sup 2}, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.).

  20. Radiation hard silicon microstrip detectors for Tevatron experiments

    International Nuclear Information System (INIS)

    Korjenevski, Sergey

    2004-01-01

    The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

  1. Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

    International Nuclear Information System (INIS)

    Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

    2007-01-01

    Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

  2. Radiation Damage Effects and Performance of Silicon Strip Detectors using LHC Readout Electronics

    CERN Document Server

    AUTHOR|(CDS)2067734

    1998-01-01

    Future high energy physics experiments as the ATLAS experiment at CERN, will use silicon strip detectors for fast and high precision tracking information. The high hadron fluences in these experiments cause permanent damage in the silicon.Additional energy levels are introduced in the bandgap thus changing the electrical properties such as leakage current and full depletion voltage V_fd .Very high leakage currents are observed after irradiation and lead to higher electronic noise and thus decrease the spatial resolution.V_fd increases to a few hundred volts after irradiation and eventually beyond the point of stable operating voltages. Prototype detectors with either p-implanted strips (p-in-n) and n-implanted strip detectors (n-in-n) were irradiated to the maximum expected fluence in ATLAS.The irradiation and the following study of the current and V_fd were carried out under ATLAS operational conditions.The evolution of V_fd after irradiation is compared to models based on diode irradiations.The qualitative ...

  3. A readout system for position sensitive measurements of X-ray using silicon strip detectors

    CERN Document Server

    Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

    2000-01-01

    In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

  4. Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

    International Nuclear Information System (INIS)

    Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

    2013-06-01

    In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

  5. Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

    CERN Document Server

    Sokolov, Oleksiy

    2006-01-01

    The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of the ITS use double-sided silicon strip detectors. This thesis focuses on testing of these detectors and performance studies of the detector module prototypes at the beam test. Silicon strip detector layers will require about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bond...

  6. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  7. A Forward Silicon Strip System for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Wonsak, S; The ATLAS collaboration

    2012-01-01

    The LHC is successfully accumulating luminosity at a centre-of-mass energy of 8 TeV this year. At the same time, plans are rapidly progressing for a series of upgrades, culminating roughly eight years from now in the High Luminosity LHC (HL-LHC) project. The HL-LHC is expected to deliver approximately five times the LHC nominal instantaneous luminosity, resulting in a total integrated luminosity of around 3000 fb-1 by 2030. The ATLAS experiment has a rather well advanced plan to build and install a completely new Inner Tracker (IT) system entirely based on silicon detectors by 2020. This new IT will be made from several pixel and strip layers. The silicon strip detector system will consist of single-sided p-type detectors with five barrel layers and six endcap (EC) disks on each forward side. Each disk will consist of 32 trapezoidal objects dubbed “petals”, with all services (cooling, read-out, command lines, LV and HV power) integrated into the petal. Each petal will contain 18 silicon sensors grouped in...

  8. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Mori, R., E-mail: riccardo.mori@physik.uni-freiburg.de [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Arratia-Munoz, M.I.; Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M.; Fleta, C.; Fernandez-Tejero, J. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Lohwasser, K. [DESY, Notkestrasse 85, 22607 Hambrug (Germany); and others

    2016-09-21

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  9. A high rate, low noise, x-ray silicon strip detector system

    International Nuclear Information System (INIS)

    Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

    1993-11-01

    An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

  10. Large tuning of birefringence in two strip silicon waveguides via optomechanical motion.

    Science.gov (United States)

    Ma, Jing; Povinelli, Michelle L

    2009-09-28

    We present an optomechanical method to tune phase and group birefringence in parallel silicon strip waveguides. We first calculate the deformation of suspended, parallel strip waveguides due to optical forces. We optimize the frequency and polarization of the pump light to obtain a 9 nm deformation for an optical power of 20 mW. Widely tunable phase and group birefringence can be achieved by varying the pump power, with maximum values of 0.026 and 0.13, respectively. The giant phase birefringence allows linear to circular polarization conversion within 30 microm for a pump power of 67 mW. The group birefringence gives a tunable differential group delay of 6fs between orthogonal polarizations. We also evaluate the tuning performance of waveguides with different cross sections.

  11. A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Sevilla, S., E-mail: Sergio.Gonzalez.Sevilla@cern.ch [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Barbier, G. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Anghinolfi, F. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Cadoux, F.; Clark, A. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Dabrowski, W.; Dwuznik, M. [AGH University of Sceince and Technology, Faculty of Physics and Applied Computer Science, Krakow (Poland); Ferrere, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Garcia, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Ikegami, Y. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hara, K. [University of Tsukuba, School of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Jakobs, K. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Kaplon, J. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Koriki, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Lacasta, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); La Marra, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Marti i Garcia, S. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Parzefall, U. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Pohl, M. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Terada, S. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2011-04-21

    The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10{sup 34} cm{sup -2} s{sup -1}. It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown.

  12. Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

    International Nuclear Information System (INIS)

    Atwood, W.B.

    1993-06-01

    The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

  13. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-12-21

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

  14. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    International Nuclear Information System (INIS)

    Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

  15. A programmable electronic Microplex Driver Unit for readout of silicon strip detectors

    International Nuclear Information System (INIS)

    Bairstow, R.

    1990-08-01

    The unit provides the necessary signals to drive arrays of Microplex devices used to readout silicon strip Vertex detectors as used in DELPHI and OPAL at CERN. The unit has a CAMAC interface allowing operation of the unit by computer in a Remote-control mode. The computer can control all the essential parameters of the drive signals, together with the operational characteristics of the system. Alternatively, the unit can be used in a stand-alone Local-control mode. In this case the front panel controls and displays enable the user to set up the unit. (author)

  16. A double sided silicon strip detector as a DRAGON end detector

    CERN Document Server

    Wrede, C; Rogers, J G; D'Auria, J M

    2003-01-01

    The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

  17. A CMOS 130nm Evaluation digitzer chip for silicon strips readout

    CERN Document Server

    Da Silva, W; Dhellot, M; Fougeron, D; Genat, J F; Hermel, R; Huppert, J f; Kapusta, F; Lebbolo, H; Pham, T H; Rossel, F; Savoy-navarro, A; Sefri, R; Vilalte

    2007-01-01

    A CMOS 130nm evaluation chip intended to read Silicon strip detectors at the ILC has been designed and successfully tested. Optimized for a detector capacitance of 10 pF, it includes four channels of charge integration, pulse shaping, a 16-deep analogue sampler triggered on input analogue sums, and parallel analogue to digital conversion. Tests results of the full chain are reported, demonstrating the behaviour and performance of the full sampling process and analogue to digital conversion. Each channel dissipates less than one milli-Watt static power.

  18. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

    International Nuclear Information System (INIS)

    Poley, Luise; Bloch, Ingo; Edwards, Sam

    2016-04-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

  19. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise [DESY, Zeuthen (Germany); Humboldt Univ. Berlin (Germany); Bloch, Ingo [DESY, Zeuthen (Germany); Edwards, Sam [Birmingham Univ. (United Kingdom); and others

    2016-04-15

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

  20. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    CERN Document Server

    INSPIRE-00407830; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid M.; Jones, T; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2016-05-24

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

  1. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    Science.gov (United States)

    Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

    2016-05-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

  2. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    International Nuclear Information System (INIS)

    Poley, L.; Bloch, I.; Friedrich, C.; Gregor, I.-M.; Edwards, S.; Pyatt, S.; Wilson, J.; Jones, T.; Lacker, H.; Rehnisch, L.; Sperlich, D.

    2016-01-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

  3. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  4. A test-bench for measurement of electrical static parameters of strip silicon detectors

    International Nuclear Information System (INIS)

    Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

    2003-01-01

    An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

  5. A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

    CERN Document Server

    Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

    2003-01-01

    An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

  6. Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

    Science.gov (United States)

    De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

    2015-04-01

    Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

  7. Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

    Directory of Open Access Journals (Sweden)

    De Cesare M.

    2015-01-01

    Full Text Available Accelerator Mass Spectrometry (AMS is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10−11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E system with a 16-strip silicon detector (4.9×10−12 just with one strip.

  8. The PASTA chip for the silicon micro strip sensor of the PANDA MVD

    Energy Technology Data Exchange (ETDEWEB)

    Riccardi, Alberto; Brinkmann, Kai-Thomas; Di Pietro, Valentino; Quagli, Tommaso; Schnell, Robert; Zaunick, Hans-Georg [II. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany); Ritman, James; Stockmanns, Tobias; Zambanini, Andre [Forschungszentrum Juelich (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy); Collaboration: PANDA-Collaboration

    2016-07-01

    In the Micro Vertex Detector, which is the innermost detector of PANDA, there are two different types of sensors: hybrid pixel and double sided micro strips. My work is focused on the development of the ASIC readout for the strips, which in the PANDA experiment must cope with a hit rate up to 50 kHz per channel. The energy loss measurement of the particles crossing the silicon sensor is obtained by implementing the Time over Threshold technique. The first PASTA (PANDA Strip ASIC) prototype is based on a Time to Digital Converter with an analog clock interpolator which combines good time resolution with a low power consumption. A full size chip was developed in a 0.11μ m CMOS technology and delivered in Autumn 2015. It features 64 channels with both analog and digital parts, a digital global controller, LVDS drivers and integrated bias. In the presentation, an overview of PASTA and the results of the first tests is presented.

  9. Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

    International Nuclear Information System (INIS)

    Treberspurg, W; Bergauer, T; Dragicevic, M; König, A; Bartl, U; Hacker, J; Wübben, T

    2014-01-01

    The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer

  10. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  11. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  12. Output factor determination for dose measurements in axial and perpendicular planes using a silicon strip detector

    Science.gov (United States)

    Abou-Haïdar, Z.; Bocci, A.; Alvarez, M. A. G.; Espino, J. M.; Gallardo, M. I.; Cortés-Giraldo, M. A.; Ovejero, M. C.; Quesada, J. M.; Arráns, R.; Prieto, M. Ruiz; Vega-Leal, A. Pérez; Nieto, F. J. Pérez

    2012-04-01

    In this work we present the output factor measurements of a clinical linear accelerator using a silicon strip detector coupled to a new system for complex radiation therapy treatment verification. The objective of these measurements is to validate the system we built for treatment verification. The measurements were performed at the Virgin Macarena University Hospital in Seville. Irradiations were carried out with a Siemens ONCOR™ linac used to deliver radiotherapy treatment for cancer patients. The linac was operating in 6 MV photon mode; the different sizes of the fields were defined with the collimation system provided within the accelerator head. The output factor was measured with the silicon strip detector in two different layouts using two phantoms. In the first, the active area of the detector was placed perpendicular to the beam axis. In the second, the innovation consisted of a cylindrical phantom where the detector was placed in an axial plane with respect to the beam. The measured data were compared with data given by a commercial treatment planning system. Results were shown to be in a very good agreement between the compared set of data.

  13. Beam loss studies on silicon strip detector modules for the CMS experiment

    CERN Document Server

    Fahrer, Manuel

    2006-01-01

    The large beam energy of the LHC demands for a save beam abort system. Nevertheless, failures cannot be excluded with last assurance and are predicted to occur once per year. As the CMS experiment is placed in the neighboured LHC octant, it is affected by such events. The effect of an unsynchronized beam abort on the silicon strip modules of the CMS tracking detector has been investigated in this thesis by performing one accelerator and two lab experiments. The dynamical behaviour of operational parameters of modules and components has been recorded during simulated beam loss events to be able to disentangle the reasons of possible damages. The first study with high intensive proton bunches at the CERN PS ensured the robustness of the module design against beam losses. A further lab experiment with pulsed IR LEDs clarified the physical and electrical processes during such events. The silicon strip sensors on a module are protected against beam losses by a part of the module design that originally has not been...

  14. Studies for the Commissioning of the CERN CMS Silicon Strip Tracker

    CERN Document Server

    Bloch, Christoph; Abbaneo, Duccio; Fabjan, Christian Wolfgang

    2008-01-01

    In 2008 the Large Hadron Collider (LHC) at CERN will start producing proton-proton collisions of unprecedented energy. One of its main experiments is the Compact Muon Solenoid (CMS), a general purpose detector, optimized for the search of the Higgs boson and super symmetric particles. The discovery potential of the CMS detector relies on a high precision tracking system, made of a pixel detector and the largest silicon strip Tracker ever built. In order to operate successfully a device as complex as the CMS silicon strip Tracker, and to fully exploit its potential, the properties of the hardware need to be characterized as precisely as possible, and the reconstruction software needs to be commissioned with physics signals. A number of issues were identified and studied to commission the detector, some of which concern the entire Tracker, while some are specific to the Tracker Outer Barrel (TOB): - the time evolution of the signals in the readout electronics need to be precisely measured and correctly simulate...

  15. Silicon strip detector for a novel 2D dosimetric method for radiotherapy treatment verification

    Science.gov (United States)

    Bocci, A.; Cortés-Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Arráns, R.; Alvarez, M. A. G.; Abou-Haïdar, Z.; Quesada, J. M.; Pérez Vega-Leal, A.; Pérez Nieto, F. J.

    2012-05-01

    The aim of this work is to characterize a silicon strip detector and its associated data acquisition system, based on discrete electronics, to obtain in a near future absorbed dose maps in axial planes for complex radiotherapy treatments, using a novel technique. The experimental setup is based on two phantom prototypes: the first one is a polyethylene slab phantom used to characterize the detector in terms of linearity, percent depth dose, reproducibility, uniformity and penumbra. The second one is a cylindrical phantom, specifically designed and built to recreate conditions close to those normally found in clinical environments, for treatment planning assessment. This system has been used to study the dosimetric response of the detector, in the axial plane of the phantom, as a function of its angle with respect to the irradiation beam. A software has been developed to operate the rotation of this phantom and to acquire signals from the silicon strip detector. As an innovation, the detector was positioned inside the cylindrical phantom parallel to the beam axis. Irradiation experiments were carried out with a Siemens PRIMUS linac operating in the 6 MV photon mode at the Virgen Macarena Hospital. Monte Carlo simulations were performed using Geant4 toolkit and results were compared to Treatment Planning System (TPS) calculations for the absorbed dose-to-water case. Geant4 simulations were used to estimate the sensitivity of the detector in different experimental configurations, in relation to the absorbed dose in each strip. A final calibration of the detector in this clinical setup was obtained by comparing experimental data with TPS calculations.

  16. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  17. A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

    CERN Document Server

    Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

    2003-01-01

    A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

  18. Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

    International Nuclear Information System (INIS)

    Basfar, A.A.

    1995-01-01

    This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

  19. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Directory of Open Access Journals (Sweden)

    Thi Dep Ha

    2016-04-01

    Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  20. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

    2016-04-15

    Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  1. LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

    Science.gov (United States)

    Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

    2017-02-01

    The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

  2. A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

    Energy Technology Data Exchange (ETDEWEB)

    Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2009-09-21

    We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

  3. Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

    CSIR Research Space (South Africa)

    Adebiyia, DI

    2016-06-01

    Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

  4. Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

    International Nuclear Information System (INIS)

    Wang Pengfei; Li Zhankui; Li Haixia

    2014-01-01

    Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

  5. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  6. Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment

    Science.gov (United States)

    Kuehn, S.; Benítez, V.; Fernández-Tejero, J.; Fleta, C.; Lozano, M.; Ullán, M.; Lacker, H.; Rehnisch, L.; Sperlich, D.; Ariza, D.; Bloch, I.; Díez, S.; Gregor, I.; Keller, J.; Lohwasser, K.; Poley, L.; Prahl, V.; Zakharchuk, N.; Hauser, M.; Jakobs, K.; Mahboubi, K.; Mori, R.; Parzefall, U.; Bernabéu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz Contell, C.; Soldevila Serrano, U.; Affolder, T.; Greenall, A.; Gallop, B.; Phillips, P. W.; Cindro, V.

    2018-03-01

    In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.

  7. Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

    Science.gov (United States)

    Ødegaard, Trygve; Tafjord, Harald; Buran, Torleiv

    1995-02-01

    As part of the luminosity monitor, SAT, in the DELPHI [1] experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beans. The tracking detector reconstructs from the interaction point and the calorimeter measures the corresponding particles' energies. The SAT Tracker [2] consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder [3,4]. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. We describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques.

  8. Status of the silicon strip high-rate FASTBUS readout system

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, H.; Barsotti, E.; Bowden, M.; Christian, D.; Chramowicz, J.; Fachin, M.; Haldeman, M.; Hoff, J.; Holmes, S.; Rotolo, C.; Romero, A.; Slimmer, D.; Swoboda, C.; Trendler, R.; Urish, J.; Yarema, R.; Zimmerman, T.; Zimmermann, S.; Kowald, W.; MacManus, A.; Recagni, M.; Segal, J.; Spentzouris, P.

    1991-11-01

    Our new readout system was developed in collaboration with, and largely to the specification of, the E771 experimenters. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experiment will operate at rates of up to 200 million beam protons per second and 10 million interactions per second. The experimental apparatus will consist of an open geometry magnetic spectrometer featuring good muon and electron identification (much of which was used in E705), and a compact 16000 channel Silicon Strip Detector. In order to satisfy the experimenter's desire to instrument 16000 SSD elements in a package only 5 cm wide, 5 cm high, and 21 cm deep, and in order to meet the performance specifications, we have made extensive use of Application Specific Integrated Circuits'' (ASIC's).

  9. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-09-11

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  10. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    International Nuclear Information System (INIS)

    Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

    2016-01-01

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  11. Status of the silicon strip high-rate FASTBUS readout system

    International Nuclear Information System (INIS)

    Gonzalez, H.; Barsotti, E.; Bowden, M.; Christian, D.; Chramowicz, J.; Fachin, M.; Haldeman, M.; Hoff, J.; Holmes, S.; Rotolo, C.; Romero, A.; Slimmer, D.; Swoboda, C.; Trendler, R.; Urish, J.; Yarema, R.; Zimmerman, T.; Zimmermann, S.; Kowald, W.; MacManus, A.; Recagni, M.; Segal, J.; Spentzouris, P.

    1991-11-01

    Our new readout system was developed in collaboration with, and largely to the specification of, the E771 experimenters. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experiment will operate at rates of up to 200 million beam protons per second and 10 million interactions per second. The experimental apparatus will consist of an open geometry magnetic spectrometer featuring good muon and electron identification (much of which was used in E705), and a compact 16000 channel Silicon Strip Detector. In order to satisfy the experimenter's desire to instrument 16000 SSD elements in a package only 5 cm wide, 5 cm high, and 21 cm deep, and in order to meet the performance specifications, we have made extensive use of ''Application Specific Integrated Circuits'' (ASIC's)

  12. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn

    2017-02-15

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10{sup 15} cm{sup -2}, using laser light with a wavelength of 1052 nm.

  13. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    International Nuclear Information System (INIS)

    Feindt, Finn

    2017-02-01

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10"1"5 cm"-"2, using laser light with a wavelength of 1052 nm.

  14. The PASTA chip - A free-running readout ASIC for silicon strip sensors in PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Goerres, Andre; Stockmanns, Tobias; Ritman, James [Institut fuer Kernphysik, Forschungszentrum Juelich, Juelich (Germany); Rivetti, Angelo [INFN Sezione di Torino, Torino (Italy); Collaboration: PANDA-Collaboration

    2014-07-01

    The PANDA experiment is a multi purpose detector, investigating hadron physics in the charm quark mass regime. It is one of the main experiments at the future FAIR accelerator facility, using pp annihilations from a 1.5-15 GeV/c anti-proton beam. Because of the broad physics spectrum and the similarity of event and background signals, PANDA does not rely on a hardware-level trigger decision. The innermost of PANDA's sub-systems is the Micro Vertex Detector (MVD), consisting of silicon pixel and strip sensors. The latter will be read out by a specialized, free-running readout front-end called PANDA Strip ASIC (PASTA). It has to face a high event rate of up to 40 kHz/ch in an radiation-intense environment. To fulfill the MVD's requirements, it has to give accurate timing information to incoming events (<10 ns) and determine the collected charge with an 8-bit precision. The design has to meet cooling and placing restrictions, leading to a very low power consumption (<4 mW/ch) and limited dimensions. Therefore, a simple, time-based readout approach is chosen. In this talk, the conceptual design of the front-end is presented.

  15. The PASTA chip. A free-running readout ASIC for silicon strip sensors in PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Goerres, Andre; Stockmanns, Tobias; Ritman, James [Forschungszentrum Juelich GmbH, Juelich (Germany); Rivetti, Angelo [INFN Sezione di Torino, Torino (Italy); Collaboration: PANDA-Collaboration

    2015-07-01

    The PANDA experiment is a multi purpose detector, investigating hadron physics in the charm quark mass regime. It is one of the main experiments at the future FAIR accelerator facility, using anti pp annihilations from a 1.5-15 GeV/c anti-proton beam. Because of the broad physics spectrum and the similarity of event and background signals, PANDA does an event selection based on the complete raw data of the detector. The innermost of PANDA's sub-systems is the Micro Vertex Detector (MVD), consisting of silicon pixel and strip sensors. The latter will be read out by a specialized, free-running readout front-end called PANDA Strip ASIC (PASTA). It has to face a high event rate of up to 40 kHz/ch in an radiation-intense environment. To fulfill the MVD's requirements, it has to give accurate timing information to incoming events (<10 ns) and determine the collected charge with an 8-bit precision. All this has to be done with a very low power design (<4 mW/ch) on a small footprint with less than 21 mm{sup 2} and 60 μm input pitch for 64 channels per chip. Therefore, a simple, time-based readout approach with two independent thresholds is chosen. In this talk, the conceptual design of the full front-end and some aspects of the digital part are presented.

  16. A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

    CERN Document Server

    Gonzalez-Sevilla, S; Parzefall, U; Clark, A; Ikegami, Y; Hara, K; Garcia, C; Jakobs, K; Dwuznik, M; Terada, S; Barbier, G; Koriki, T; Lacasta, C; Unno, Y; Anghinolfi, F; Cadoux, F; Garcia, S M I; Ferrere, D; La Marra, D; Pohl, M; Dabrowski, W; Kaplon, J

    2011-01-01

    The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10(34)cm(-2)s(-1). It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown. (C) 2010 Elsevier B.V. All rights reserved.

  17. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

    International Nuclear Information System (INIS)

    Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

    1991-01-01

    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

  18. Radiation hardness of silicon detectors for collider experiments

    International Nuclear Information System (INIS)

    Golutvin, I.; Cheremukhin, A.; Fefelova, E.

    1995-01-01

    The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

  19. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Bremer, Richard; Feld, Lutz

    2008-01-01

    At the European Organization for Nuclear Research (CERN) ne ar Geneva the new proton-proton collider ring LHC and the experiments that will be operated a t this accelerator are currently being finalised. Among these experiments is the multi-purpose det ector CMS whose aim it is to discover and investigate new physical phenomena that might become ac cessible by virtue of the high center- of-mass energy and luminosity of the LHC. Two of the most inte nsively studied possibilities are the discovery of the Higgs Boson and of particles from the spectr um of supersymmetric extensions of the Standard Model. CMS is the first large experiment of high- energy particle physics whose inner tracking system is exclusively instrumented with silicon d etector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction poin t in 10–12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completi on of the end caps of the tracking system. The institute played a leading...

  20. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  1. System tests with silicon strip module prototypes for the Phase-2-upgrade of the CMS tracker

    Energy Technology Data Exchange (ETDEWEB)

    Feld, Lutz; Karpinski, Waclaw; Klein, Katja; Preuten, Marius [I. Physikalisches Institut B, RWTH Aachen University (Germany)

    2016-07-01

    To prepare the CMS experiment for the High Luminosity LHC and its instantaneous luminosity of 5 . 10{sup 34} cm{sup -2}s{sup -1}, in the Long Shutdown 3 (around 2024) the CMS Silicon Tracker will be replaced. The Silicon Strip Modules for the new Tracker will host two vertically stacked sensors. The combination of hit information from both sensors will allow the estimation of the transverse momentum (p{sub T}) of charged particles in the module front-end. This can be used to identify hits from potential interesting high-p{sub T} tracks (above 2 GeV) for the first trigger level. The CMS Binary Chip (CBC) provides the analogue readout of two sensors and a digital section, into which the momentum discrimination is integrated. The modules will host a new DC-DC converter chain, which will allow individual powering of each module. First measurements with early prototypes on the interplay between DC-DC powering and the read-out functions of the module are presented in this talk.

  2. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  3. Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

    International Nuclear Information System (INIS)

    Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

    2013-06-01

    We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

  4. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  5. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  6. Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

    Science.gov (United States)

    Ghosh, P.

    2016-01-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

  7. A novel ultra-low carbon grain oriented silicon steel produced by twin-roll strip casting

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang, E-mail: wy069024019@163.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhang, Yuan-Xiang; Lu, Xiang; Fang, Feng; Xu, Yun-Bo; Cao, Guang-Ming; Li, Cheng-Gang [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States); Wang, Guo-Dong [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China)

    2016-12-01

    A novel ultra-low carbon grain oriented silicon steel was successfully produced by strip casting and two-stage cold rolling method. The microstructure, texture and precipitate evolution under different first cold rolling reduction were investigated. It was shown that the as-cast strip was mainly composed of equiaxed grains and characterized by very weak Goss texture ({110}<001>) and λ-fiber (<001>//ND). The coarse sulfides of size ~100 nm were precipitated at grain boundaries during strip casting, while nitrides remained in solution in the as-cast strip and the fine AlN particles of size ~20–50 nm, which were used as grain growth inhibitors, were formed in intermediate annealed sheet after first cold rolling. In addition, the suitable Goss nuclei for secondary recrystallization were also formed during intermediate annealing, which is totally different from the conventional process that the Goss nuclei originated in the subsurface layer of the hot rolled sheet. Furthermore, the number of AlN inhibitors and the intensity of desirable Goss texture increased with increasing first cold rolling reduction. After secondary recrystallization annealing, very large grains of size ~10–40 mm were formed and the final magnetic induction, B{sub 8}, was as high as 1.9 T. - Highlights: • A novel chemical composition base on strip casting silicon steel was proposed. • The ultra-low carbon design could shorten the processing routes. • The novel composition and processes were beneficial to obtain more inhibitors. • The magnetic induction of grain oriented silicon steel was significantly improved.

  8. Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

    Czech Academy of Sciences Publication Activity Database

    Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2005-01-01

    Roč. 552, - (2005), s. 292-328 ISSN 0168-9002 R&D Projects: GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : front-end electronics * binary readout * silicon strip detectors * application specific integrated circuits * quality assurance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  9. Characterization and calibration of radiation-damaged double-sided silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

    2017-05-21

    Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

  10. Fast CMOS binary front-end for silicon strip detectors at LHC experiments

    CERN Document Server

    Kaplon, Jan

    2004-01-01

    We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.

  11. Lithium analysis using a double-sided silicon strip detector at LIBAF

    Science.gov (United States)

    De La Rosa, Nathaly; Kristiansson, Per; Nilsson, E. J. Charlotta; Ros, Linus; Elfman, Mikael; Pallon, Jan

    2017-08-01

    Quantification and mapping possibilities of lithium in geological material, by Nuclear Reaction Analysis (NRA), was evaluated at the Lund Ion Beam Analysis Facility (LIBAF). LiF and two Standard Reference Materials, (SRM 610 and SRM 612) were used in the investigation. The main part of the data was obtained at the beam energy 635 keV studying the high Q-value reaction 7Li(p, α)4He, but reaction yield and detection limits were also briefly investigated as a function of the energy. A double-sided silicon strip detector (DSSSD) was used to detect the α -particles emitted in the reaction in the backward direction. The combination of the high Q-value, a reasonably good cross-section and the possibility to use a high beam current have been demonstrated to allow for measurement of concentrations down below 50 ppm. Proton energies below 800 keV were demonstrated to be appropriate energies for extracting lithium in combination with boron analysis.

  12. Development of double-sided silicon strip detectors (DSSD) for a Compton telescope

    International Nuclear Information System (INIS)

    Takeda, Shin'ichiro; Watanabe, Shin; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Fukazawa, Yasushi; Yasuda, Hajimu; Tajima, Hiroyasu; Kuroda, Yoshikatsu; Onishi, Mitsunobu; Genba, Kei

    2007-01-01

    The low noise double-sided silicon strip detector (DSSD) technology is used to construct a next generation Compton telescope which is required to have both high-energy resolution and high-Compton reconstruction efficiency. In this paper, we present the result of a newly designed stacked DSSD module with high-energy resolution in highly packed mechanical structure. The system is designed to obtain good P-side and N-side noise performance by means of DC-coupled read-out. Since there are no decoupling capacitors in front-end electronics before the read-out ASICs, a high density stacked module with a pitch of 2 mm can be constructed. By using a prototype with four-layer of DSSDs with an area of 2.56cmx2.56cm, we have succeeded to operate the system. The energy resolution at 59.5 keV is measured to be 1.6 keV (FWHM) for the P-side and 2.8 keV (FWHM) for the N-side, respectively. In addition to the DSSD used in the prototype, a 4 cm wide DSSD with a thickness of 300μm is also developed. With this device, an energy resolution of 1.5 keV (FWHM) was obtained. A method to model the detector energy response to properly handle split events is also discussed

  13. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bremer, Richard

    2008-04-28

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising

  14. Integration of the end cap TEC+ of the CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Bremer, Richard

    2008-01-01

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising particles

  15. Radiation-hard silicon gate bulk CMOS cell family

    International Nuclear Information System (INIS)

    Gibbon, C.F.; Habing, D.H.; Flores, R.S.

    1980-01-01

    A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved

  16. One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

    International Nuclear Information System (INIS)

    Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

    2012-01-01

    1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

  17. Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

    Czech Academy of Sciences Publication Activity Database

    Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

    2001-01-01

    Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

  18. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  19. Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

    International Nuclear Information System (INIS)

    Oedegaard, T.; Tafjord, H.; Buran, T.

    1994-12-01

    As part of the luminosity monitor SAT in the DELPHI experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beams. The tracking detector reconstructs tracks from the interaction point and the calorimeter measures the corresponding particles' energies.The SAT Tracker consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. The authors describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques. 11 refs., 5 figs., 4 tabs

  20. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  1. Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

    International Nuclear Information System (INIS)

    Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

    2010-01-01

    Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

  2. Radiation hardness of silicon detectors manufactured on wafers from various sources

    International Nuclear Information System (INIS)

    Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

    1997-01-01

    Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

  3. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    Science.gov (United States)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  4. Numerical Simulation of a Novel Sensing Approach Based on Abnormal Blocking by Periodic Grating Strips near the Silicon Wire Waveguide

    Directory of Open Access Journals (Sweden)

    Andrei Tsarev

    2018-05-01

    Full Text Available This paper discusses the physical nature and the numerical modeling of a novel approach of periodic structures for applications as photonic sensors. The sensing is based on the high sensitivity to the cover index change of the notch wavelength. This sensitivity is due to the effect of abnormal blocking of the guided wave propagating along the silicon wire with periodic strips overhead it through the silica buffer. The structure sensing is numerically modeled by 2D and 3D finite difference time domain (FDTD method, taking into account the waveguide dispersion. The modeling of the long structures (more than 1000 strips is accomplished by the 2D method of lines (MoL with a maximal implementation of the analytical feature of the method. It is proved that the effect of abnormal blocking could be used for the construction of novel types of optical sensors.

  5. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    CERN Document Server

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  6. Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

    International Nuclear Information System (INIS)

    Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

    2011-01-01

    Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

  7. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  8. Beam tests of lead tungstate crystal matrices and a silicon strip preshower detector for the CMS electromagnetic calorimeter

    CERN Document Server

    Auffray, Etiennette; Barney, D; Bassompierre, Gabriel; Benhammou, Ya; Blick, A M; Bloch, P; Bonamy, P; Bourotte, J; Buiron, L; Cavallari, F; Chipaux, Rémi; Cockerill, D J A; Dafinei, I; Davies, G; Depasse, P; Deiters, K; Diemoz, M; Dobrzynski, Ludwik; Donskov, S V; Mamouni, H E; Ercoli, C; Faure, J L; Felcini, Marta; Gautheron, F; Géléoc, M; Givernaud, Alain; Gninenko, S N; Godinovic, N; Graham, D J; Guillaud, J P; Guschin, E; Haguenauer, Maurice; Hillemanns, H; Hofer, H; Ille, B; Inyakin, A V; Jääskeläinen, S; Katchanov, V A; Kirn, T; Kloukinas, Kostas C; Korzhik, M V; Lassila-Perini, K M; Lebrun, P; Lecoq, P; Lecoeur, Gérard; Lecomte, P; Leonardi, E; Locci, E; Loos, R; Longo, E; MacKay, C K; Martin, E; Mendiburu, J P; Musienko, Yu V; Nédélec, P; Nessi-Tedaldi, F; Organtini, G; Paoletti, S; Pansart, J P; Peigneux, J P; Puljak, I; Qian, S; Reid, E; Renker, D; Rosowsky, A; Rosso, E; Rusack, R W; Rykaczewski, H; Schneegans, M; Seez, Christopher J; Semeniouk, I N; Shagin, P M; Sillou, D; Singovsky, A V; Sougonyaev, V; Soric, I; Verrecchia, P; Vialle, J P; Virdee, Tejinder S; Zhu, R Y

    1998-01-01

    Tests of lead tungstate crystal matrices carried out in high-energy electron beams in 1996, using new crystals, new APDs and an improved test set-up, confirm that an energy resolution of better than 0 .6% at 100 GeV can be obtained when the longitudinal uniformity of the struck crystal is adequate. Light loss measurements under low dose irradiation are reported. It is shown that there is no loss of energy resolution after irradiation and that the calibration change due to light loss can be tracked with a precision monitoring system. Finally, successuful tests with a preshower device, equipped wi th silicon strip detector readout, are described.

  9. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    International Nuclear Information System (INIS)

    Poley, Luise; Lohwasser, Kristin; Blue, Andrew

    2016-11-01

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  10. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise; Lohwasser, Kristin [DESY, Hamburg (Germany); Blue, Andrew [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

    2016-11-15

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  11. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    OpenAIRE

    Poley, Luise; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid-Maria; Jones, Tim; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2015-01-01

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy gl...

  12. Development of radiation hard microstrip detectors for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Chatterji, Sudeep [GSI, Darmstadt (Germany)

    2010-07-01

    Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

  13. Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

    Science.gov (United States)

    Poley, L.; Blue, A.; Bates, R.; Bloch, I.; Díez, S.; Fernandez-Tejero, J.; Fleta, C.; Gallop, B.; Greenall, A.; Gregor, I.-M.; Hara, K.; Ikegami, Y.; Lacasta, C.; Lohwasser, K.; Maneuski, D.; Nagorski, S.; Pape, I.; Phillips, P. W.; Sperlich, D.; Sawhney, K.; Soldevila, U.; Ullan, M.; Unno, Y.; Warren, M.

    2016-07-01

    The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6·1034 cm-2s-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1·1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

  14. Low-level determination of silicon in steels by anodic stripping voltammetry on a hanging mercury drop electrode.

    Science.gov (United States)

    Rahier, A H; Lunardi, S; Nicolle, F; George, S M

    2010-10-15

    The sensitive differential pulse anodic stripping voltammetry (DPASV) proposed originally by Ishiyama et al. (2001) has been revised and improved to allow the accurate measurement of silicon on a hanging mercury drop electrode (HMDE) instead of a glassy carbon electrode. We assessed the rate of formation of the partially reduced β-silicododecamolybdate and found that metallic mercury promotes the reaction in the presence of a large concentration of Fe(3+). The scope of the method has been broadened by carrying out the measurements in the presence of a constant amount of Fe(3+). The limit of detection (LOD) of the method described in the present paper is 100 μg Sig(-1) of steel, with a relative precision ranging from 5% to 12%. It can be further enhanced to 700 ng Sig(-1) of steel provided the weight of the sample, the dilution factors, the duration of the electrolysis and the ballast of iron are adequately revised. The tolerance to several interfering species has been examined, especially regarding Al(3+), Cr(3+) and Cr VI species. The method was validated using four low-alloy ferritic steels certified by the National Institute of Standards and Technology (NIST). Its application to nickel base alloys as well as to less complicated matrixes is straightforward. It has also been successfully applied to the determination of free silicon into silicon carbide nano-powder. Copyright © 2010 Elsevier B.V. All rights reserved.

  15. Effect of an Intermediate Heat-treatment on a Change of the Corrosion Resistance and Hardness of a HANA-4 Outer Strip

    International Nuclear Information System (INIS)

    Lee, Myung Ho; Jung, Yang Il; Park, Sang Yoon; Choi, Byoung Kwon; Park, Jeong Yong; Jeong, Yong Hwan; Eom, Kyong Bo; Park, Nam Gyu; Lim, Yoon Soo

    2008-01-01

    KAERI (Korea Atomic Energy Research Institute) in collaboration with KNF (Korea Nuclear Fuel) undertook some researches on the applicability of HANA-4 and HANA-6 alloys for the spacer grid for a PWR (Pressurized Water Reactor) nuclear fuel. As a part of the research, KAERI studied the effect of the final heat-treatment on the mechanical and corrosion properties of a HANA-4 inner strip. The strip was manufactured with a sheet which had been intermediately heat-treated at about 580 .deg. C for 2.5-4 hours after each cold rolling before being processed into the final strip product. It was mentioned that the process with the intermediate heat treatment needed reviewing to establish an improved manufacturing process for the cold rolling. So, this work tried to check the effect of an intermediate heat-treatment on the properties of a HANA-4 strip using a specimen that was taken from a second hot rolled material before a cold-rolling. The manufacturing processes, with three different kinds of annealings, were introduced to investigate the applicable intermediate heat-treatment process. After all the cold-rolling processes, the Vickers hardness was measured for the final annealed specimens and 60 days of corrosion tests were carried out to check on the effect of the intermediate heat-treatment. Finally, an appropriate intermediate heat-treatment was proposed to improve the manufacturability of the HANA-4 strip

  16. Practical measurement of silicon in low alloy steels by differential pulse stripping voltammetry

    International Nuclear Information System (INIS)

    Rahier, A.; Lunardi, S.; Triki, C.

    2005-01-01

    A sensitive differential pulse anodic stripping voltammetry has been adapted to allow the determination of Si in low-alloy steels using a hanging mercury drop electrode. The method has been qualified using certified ASTM standards and is now running in routine. The present report describes the experimental details, thereby allowing the reader to carry out the measurements precisely. (author)

  17. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  18. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    Science.gov (United States)

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  19. Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

    International Nuclear Information System (INIS)

    Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

    1996-01-01

    The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

  20. Implementation of a Large Scale Control System for a High-Energy Physics Detector: The CMS Silicon Strip Tracker

    CERN Document Server

    Masetti, Lorenzo; Fischer, Peter

    2011-01-01

    Control systems for modern High-Energy Physics (HEP) detectors are large distributed software systems managing a significant data volume and implementing complex operational procedures. The control software for the LHC experiments at CERN is built on top of a commercial software used in industrial automation. However, HEP specific requirements call for extended functionalities. This thesis focuses on the design and implementation of the control system for the CMS Silicon Strip Tracker but presents some general strategies that have been applied in other contexts. Specific design solutions are developed to ensure acceptable response times and to provide the operator with an effective summary of the status of the devices. Detector safety is guaranteed by proper configuration of independent hardware systems. A software protection mechanism is used to avoid the widespread intervention of the hardware safety and to inhibit dangerous commands. A wizard approach allows non expert operators to recover error situations...

  1. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

    1993-03-01

    AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

  2. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

    International Nuclear Information System (INIS)

    Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

    1992-02-01

    AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

  3. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  4. Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

    NARCIS (Netherlands)

    Sokolov, Oleksiy

    2006-01-01

    The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of

  5. The rad-hard readout system of the BaBar silicon vertex tracker

    Science.gov (United States)

    Re, V.; DeWitt, J.; Dow, S.; Frey, A.; Johnson, R. P.; Kroeger, W.; Kipnis, I.; Leona, A.; Luo, L.; Mandelli, E.; Manfredi, P. F.; Nyman, M.; Pedrali-Noy, M.; Poplevin, P.; Perazzo, A.; Roe, N.; Spencer, N.

    1998-02-01

    This paper discusses the behaviour of a prototype rad-hard version of the chip developed for the readout of the BaBar silicon vertex tracker. A previous version of the chip, implemented in the 0.8 μm HP rad-soft version has been thoroughly tested in the recent times. It featured outstanding noise characteristics and showed that the specifications assumed as target for the tracker readout were met to a very good extent. The next step was the realization of a chip prototype in the rad-hard process that will be employed in the actual chip production. Such a prototype is structurally and functionally identical to its rad-soft predecessor. However, the process parameters being different, and not fully mastered at the time of design, some deviations in the behaviour were to be expected. The reasons for such deviations have been identified and some of them were removed by acting on the points that were left accessible on the chip. Other required small circuit modifications that will not affect the production schedule. The tests done so far on the rad-hard chip have shown that the noise behaviour is very close to that of the rad-soft version, that is fully adequate for the vertex detector readout.

  6. The silicon strips Inner Tracker (ITk) of the ATLAS Phase-II upgrade detector

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00220523; The ATLAS collaboration

    2018-01-01

    The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. At the same time, they cannot introduce excess material which could undermine performance. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The inner detector of the current detector will be replaced by the Inner Tracker (ITk). It consists of an innermost pixel detector and an outer strips tracker. This contribution focuses on the strips tracker. The basic detection unit of the ...

  7. Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

    Science.gov (United States)

    Sokolov, Oleksiy

    2006-04-01

    The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5˜TeV per nucleon. Particle tracking around the interaction region at radii rrequire about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bonding operation, the component testing is done to reject the non-functional or poorly performing chips and hybrids. The LabView-controlled test station for this operation has been built at Utrecht University and was successfully used for mass production acceptance tests of chips and hybrids at three production labs. The functionality of the chip registers, bonding quality and analogue functionality of the chips and hybrids are addressed in the test. The test routines were optimized to minimize the testing time to make sure that testing is not a bottleneck of the mass production. For testing of complete modules the laser scanning station with 1060 nm diode laser has been assembled at Utrecht University. The testing method relies of the fact that a response of the detector module to a short collimated laser beam pulse resembles a response to a minimum ionizing particle. A small beam spot size (˜7 μm ) allows to deposit the charge in a narrow region and measure the response of individual detector channels. First several module prototypes have been studied with this setup, the strip gain and charge sharing function have been measured, the later is compared with the model predictions. It was also shown that for a laser beam of a high monochromaticity, interference in the sensor bulk significantly modulates

  8. Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2018-01-01

    For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

  9. Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

    CERN Document Server

    Allport, P.P

    2012-01-01

    The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their pro...

  10. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Flores, J.L. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain); Martel, I. [Dpto de Física Aplicada, Universidad de Huelva (Spain); CERN, ISOLDE, CH 1211 Geneva, 23 (Switzerland); Jiménez, R. [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Galán, J., E-mail: jgalan@diesia.uhu.es [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Salmerón, P. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain)

    2016-09-11

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from {sup 12}C up to {sup 84}Kr, yielding higher discrimination rates than any other previously reported.

  11. A simple pulse shape discrimination technique applied to a silicon strip detector

    International Nuclear Information System (INIS)

    Figuera, P.; Lu, J.; Amorini, F.; Cardella, G.; DiPietro, A.; Papa, M.; Musumarra, A.; Pappalardo, G.; Rizzo, F.; Tudisco, S.

    2001-01-01

    Full text: Since the early sixties, it has been known that the shape of signals from solid state detectors can be used for particle identification. Recently, this idea has been revised in a group of papers where it has been shown that the shape of current signals from solid state detectors is mainly governed by the combination of plasma erosion time and charge carrier collection time effects. We will present the results of a systematic study on a pulse shape identification method which, contrary to the techniques proposed, is based on the use of the same electronic chain normally used in the conventional time of flight technique. The method is based on the use of charge preamplifiers, low polarization voltages (i.e. just above full depletion ones), rear side injection of the incident particles, and on a proper setting of the constant fraction discriminators which enhances the dependence of the timing output on the rise time of the input signals (which depends on the charge and energy of the incident ions). The method has been applied to an annular Si strip detector with an inner radius of about 16 mm and an outer radius of about 88 mm. The detector, manufactured by Eurisys Measures (Type Ips.73.74.300.N9), is 300 microns thick and consists of 8 independent sectors each divided into 9 circular strips. On beam tests have been performed at the cyclotron of the Laboratori Nazionali del Sud in Catania using a 25.7 MeV/nucleon 58 Ni beam impinging on a 51 V and 45 Sc composite target. Excellent charge identification from H up to the Ni projectile has been observed and typical charge identification thresholds are: ∼ 1.7 MeV/nucleon for Z ≅ 6, ∼ 3.0 MeV/nucleon for Z ≅ 11, and ∼ 5.5 MeV/nucleon for Z ≅ 20. Isotope identification up to A ≅ 13 has been observed with an energy threshold of about 6 MeV/nucleon. The identification quality has been studied as a function of the constant fraction settings. The method has been applied to all the 72 independent strips

  12. Spectral CT of the extremities with a silicon strip photon counting detector

    Science.gov (United States)

    Sisniega, A.; Zbijewski, W.; Stayman, J. W.; Xu, J.; Taguchi, K.; Siewerdsen, J. H.

    2015-03-01

    Purpose: Photon counting x-ray detectors (PCXDs) are an important emerging technology for spectral imaging and material differentiation with numerous potential applications in diagnostic imaging. We report development of a Si-strip PCXD system originally developed for mammography with potential application to spectral CT of musculoskeletal extremities, including challenges associated with sparse sampling, spectral calibration, and optimization for higher energy x-ray beams. Methods: A bench-top CT system was developed incorporating a Si-strip PCXD, fixed anode x-ray source, and rotational and translational motions to execute complex acquisition trajectories. Trajectories involving rotation and translation combined with iterative reconstruction were investigated, including single and multiple axial scans and longitudinal helical scans. The system was calibrated to provide accurate spectral separation in dual-energy three-material decomposition of soft-tissue, bone, and iodine. Image quality and decomposition accuracy were assessed in experiments using a phantom with pairs of bone and iodine inserts (3, 5, 15 and 20 mm) and an anthropomorphic wrist. Results: The designed trajectories improved the sampling distribution from 56% minimum sampling of voxels to 75%. Use of iterative reconstruction (viz., penalized likelihood with edge preserving regularization) in combination with such trajectories resulted in a very low level of artifacts in images of the wrist. For large bone or iodine inserts (>5 mm diameter), the error in the estimated material concentration was errors of 20-40% were observed and motivate improved methods for spectral calibration and optimization of the edge-preserving regularizer. Conclusion: Use of PCXDs for three-material decomposition in joint imaging proved feasible through a combination of rotation-translation acquisition trajectories and iterative reconstruction with optimized regularization.

  13. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    International Nuclear Information System (INIS)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-01-01

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10 6 ) photonic crystal cavities with low mode volume (V m  = 1.062 × (λ/n) 3 ), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10 3

  14. Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

    Science.gov (United States)

    Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

    As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  15. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, Lars Gimmestad

    2005-07-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  16. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    International Nuclear Information System (INIS)

    Johansen, Lars Gimmestad

    2005-06-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  17. SiliPET: An ultra high resolution design of a small animal PET scanner based on double sided silicon strip detector stacks

    International Nuclear Information System (INIS)

    Zavattini, G.; Cesca, N.; Di Domenico, G.; Moretti, E.; Sabba, N.

    2006-01-01

    We investigated the capabilities of a small animal PET scanner, named SiliPET, based on four stacks of double sided silicon strips detectors. Each stack consists of 40 silicon detectors with dimension 60x60x1mm 3 . These are arranged to form a box 5x5x6cm 3 with minor sides opened; the box represents the maximal FOV of the scanner. The performance parameters of SiliPET scanner have been estimated, giving an intrinsic spatial resolution of 0.52mm and a sensitivity of 5.1% at the center of the system

  18. The use of a silicon strip detector dose magnifying glass in stereotactic radiotherapy QA and dosimetry

    International Nuclear Information System (INIS)

    Wong, J. H. D.; Knittel, T.; Downes, S.; Carolan, M.; Lerch, M. L. F.; Petasecca, M.; Perevertaylo, V. L.; Metcalfe, P.; Jackson, M.; Rosenfeld, A. B.

    2011-01-01

    Purpose: Stereotactic radiosurgery/therapy (SRS/SRT) is the use of radiation ablation in place of conventional surgical excision to remove or create fibrous tissue in small target volumes. The target of the SRT/SRS treatment is often located in close proximity to critical organs, hence the requirement of high geometric precision including a tight margin on the planning target volume and a sharp dose fall off. One of the major problems with quality assurance (QA) of SRT/SRS is the availability of suitable detectors with the required spatial resolution. The authors present a novel detector that they refer to as the dose magnifying glass (DMG), which has a high spatial resolution (0.2 mm) and is capable of meeting the stringent requirements of QA and dosimetry in SRS/SRT therapy. Methods: The DMG is an array of 128 phosphor implanted n + strips on a p-type Si wafer. The sensitive area defined by a single n + strip is 20x2000 μm 2 . The Si wafer is 375 μm thick. It is mounted on a 0.12 mm thick Kapton substrate. The authors studied the dose per pulse (dpp) and angular response of the detector in a custom-made SRS phantom. The DMG was used to determine the centers of rotation and positioning errors for the linear accelerator's gantry, couch, and collimator rotations. They also used the DMG to measure the profiles and the total scatter factor (S cp ) of the SRS cones. Comparisons were made with the EBT2 film and standard S cp values. The DMG was also used for dosimetric verification of a typical SRS treatment with various noncoplanar fields and arc treatments when applied to the phantom. Results: The dose per pulse dependency of the DMG was found to be cp agrees very well with the standard data with an average difference of 1.2±1.1%. Comparison of the relative intensity profiles of the DMG and EBT2 measurements for a simulated SRS treatment shows a maximum difference of 2.5%. Conclusions: The DMG was investigated for dose per pulse and angular dependency. Its

  19. The use of a silicon strip detector dose magnifying glass in stereotactic radiotherapy QA and dosimetry.

    Science.gov (United States)

    Wong, J H D; Knittel, T; Downes, S; Carolan, M; Lerch, M L F; Petasecca, M; Perevertaylo, V L; Metcalfe, P; Jackson, M; Rosenfeld, A B

    2011-03-01

    Stereotactic radiosurgery/therapy (SRS/SRT) is the use of radiation ablation in place of conventional surgical excision to remove or create fibrous tissue in small target volumes. The target of the SRT/SRS treatment is often located in close proximity to critical organs, hence the requirement of high geometric precision including a tight margin on the planning target volume and a sharp dose fall off. One of the major problems with quality assurance (QA) of SRT/SRS is the availability of suitable detectors with the required spatial resolution. The authors present a novel detector that they refer to as the dose magnifying glass (DMG), which has a high spatial resolution (0.2 mm) and is capable of meeting the stringent requirements of QA and dosimetry in SRS/SRT therapy. The DMG is an array of 128 phosphor implanted n+ strips on a p-type Si wafer. The sensitive area defined by a single n+ strip is 20 x 2000 microm2. The Si wafer is 375 microm thick. It is mounted on a 0.12 mm thick Kapton substrate. The authors studied the dose per pulse (dpp) and angular response of the detector in a custom-made SRS phantom. The DMG was used to determine the centers of rotation and positioning errors for the linear accelerator's gantry, couch, and collimator rotations. They also used the DMG to measure the profiles and the total scatter factor (S(cp)) of the SRS cones. Comparisons were made with the EBT2 film and standard S(cp) values. The DMG was also used for dosimetric verification of a typical SRS treatment with various noncoplanar fields and arc treatments when applied to the phantom. The dose per pulse dependency of the DMG was found to be DMG and EBT2 measurements for a simulated SRS treatment shows a maximum difference of 2.5%. The DMG was investigated for dose per pulse and angular dependency. Its application to SRS/SRT delivery verification was demonstrated. The DMG with its high spatial resolution and real time capability allows measurement of dose profiles for cone

  20. Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

    Czech Academy of Sciences Publication Activity Database

    Böhm, Jan; Mikeštíková, Marcela; Affolder, A.A.; Allport, P.P.; Bates, R.; Betancourt, C.; Brown, H.; Buttar, C.; Carter, J. R.; Casse, G.

    2011-01-01

    Roč. 636, č. 1 (2011), "S104"-"S110" ISSN 0168-9002 R&D Projects: GA MŠk LA08032 Institutional research plan: CEZ:AV0Z10100502 Keywords : silicon * micro-strip * ATLAS ID upgrade * SLHC * leakage current * depletion voltage * electrical characteristics * coupling capacitance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.207, year: 2011 http://dx.doi.org/10.1016/j.nima.2010.04.093

  1. Effect of different types of disinfection solution and aging on the hardness and colour stability of maxillofacial silicone elastomers.

    Science.gov (United States)

    Cevik, Pinar; Yildirim-Bicer, Arzu Z

    2017-11-09

    Understanding the effect of aging and different disinfecting agents on the physical properties of pigmented maxillofacial silicones may help eliminate the current uncertainty as to the best follow-up suggestions for the patients treated with silicone prostheses. One hundred fifty specimens (14 × 2 mm) were evaluated for colour and 75 specimens (30 × 10 mm) for hardness (total, 225 specimens). Five specimens were used for hardness testing in each disinfecting solution while 10 silicone specimens were used for colour evaluation. The samples were separated into 5 groups and the initial hardness and colour evaluations were performed and placed in disinfectant solution (neutral soap, effervescent tablet, 0.2% chlorhexidine, 4% chlorhexidine, sodium hypochlorite). A second set of colour and hardness measurements was taken after 48 hours of disinfection and 1,008 hours of artificial aging in a QUV-accelerated weathering tester. Two-way and 1-way analysis of variance with Tukey tests and paired t-test were used for statistical analysis (α = 0.05). Before artificial aging, the hardness value of the red pigment group was found to be significantly lower than that of the brown pigment group. After aging, the lowest Shore A value was seen in the neutral soap group, while the highest was seen in the effervescent tablet. Based on the results of this study, chlorohexidine 0.2% was found to be most suitable agent for disinfection of the prostheses. Washing with neutral soap caused loss of pigment from the surface of the silicones. Sodium hypochlorite was found to have a colour-fading effect on silicone specimens.

  2. Alignment of the CMS Silicon Strip Tracker during stand-alone Commissioning

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruhwirth, R.; Hansel, S.; Hrubec, J.; Krammer, M.; Oberegger, M.; Pernicka, M.; Schmid, S.; Stark, R.; Steininger, H.; Uhl, D.; Waltenberger, W.; Widl, E.; Van Mechelen, P.; Cardaci, M.; Beaumont, W.; de Langhe, E.; de Wolf, E.A.; Delmeire, E.; Hashemi, M.; Bouhali, O.; Charaf, O.; Clerbaux, B.; Dewulf, J.-P.; Elgammal, S.; Hammad, G.; de Lentdecker, G.; Marage, P.; Vander Velde, C.; Vanlaer, P.; Wickens, J.; Adler, V.; Devroede, O.; De Weirdt, S.; D'Hondt, J.; Goorens, R.; Heyninck, J.; Maes, J.; Mozer, Matthias Ulrich; Tavernier, S.; Van Lancker, L.; Van Mulders, P.; Villella, I.; Wastiels, C.; Bonnet, J.-L.; Bruno, G.; De Callatay, B.; Florins, B.; Giammanco, A.; Gregoire, G.; Keutgen, Th.; Kcira, D.; Lemaitre, V.; Michotte, D.; Militaru, O.; Piotrzkowski, K.; Quertermont, L.; Roberfroid, V.; Rouby, X.; Teyssier, D.; daubie, E.; Anttila, E.; Czellar, S.; Engstrom, P.; Harkonen, J.; Karimaki, V.; Kostesmaa, J.; Kuronen, A.; Lampen, T.; Linden, T.; Luukka, P.-R.; Maenaa, T.; Michal, S.; Tuominen, E.; Tuominiemi, J.; Ageron, M.; Baulieu, G.; Bonnevaux, A.; Boudoul, G.; Chabanat, E.; Chabert, E.; Chierici, R.; Contardo, D.; Della Negra, R.; Dupasquier, T.; Gelin, G.; Giraud, N.; Guillot, G.; Estre, N.; Haroutunian, R.; Lumb, N.; Perries, S.; Schirra, F.; Trocme, B.; Vanzetto, S.; Agram, J.-L.; Blaes, R.; Drouhin, F.; Ernenwein, J.-P.; Fontaine, J.-C.; Berst, J.-D.; Brom, J.-M.; Didierjean, F.; Goerlach, U.; Graehling, P.; Gross, L.; Hosselet, J.; Juillot, P.; Lounis, A.; Maazouzi, C.; Olivetto, C.; Strub, R.; Van Hove, P.; Anagnostou, G.; Brauer, R.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Kukulies, C.; Olzem, J.; Ostapchuk, A.; Pandoulas, D.; Pierschel, G.; Raupach, F.; Schael, S.; Schwering, G.; Sprenger, D.; Thomas, M.; Weber, M.; Wittmer, B.; Wlochal, M.; Beissel, F.; Bock, E.; Flugge, G.; Gillissen, C.; Hermanns, T.; Heydhausen, D.; Jahn, D.; Kaussen, G.; Linn, A.; Perchalla, L.; Poettgens, M.; Pooth, O.; Stahl, A.; Zoeller, M.H.; Buhmann, P.; Butz, E.; Flucke, G.; Hamdorf, R.; Hauk, J.; Klanner, R.; Pein, U.; Schleper, P.; Steinbruck, G.; Blum, P.; De Boer, W.; Dierlamm, A.; Dirkes, G.; Fahrer, M.; Frey, M.; Furgeri, A.; Hartmann, F.; Heier, S.; Hoffmann, K.-H.; Kaminski, J.; Ledermann, B.; Liamsuwan, T.; Muller, S.; Muller, Th.; Schilling, F.-P.; Simonis, H.-J.; Steck, P.; Zhukov, V.; Cariola, P.; De Robertis, G.; Ferorelli, R.; Fiore, L.; Preda, M.; Sala, G.; Silvestris, L.; Tempesta, P.; Zito, G.; Creanza, D.; De Filippis, N.; De Palma, M.; Giordano, D.; Maggi, G.; Manna, N.; My, S.; Selvaggi, G.; Albergo, S.; Chiorboli, M.; Costa, S.; Galanti, M.; Giudice, N.; Guardone, N.; Noto, F.; Potenza, R.; Saizu, M.A.; Sparti, V.; Sutera, C.; Tricomi, A.; Tuve, C.; Brianzi, M.; Civinini, C.; Maletta, F.; Manolescu, F.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Broccolo, B.; Ciulli, V.; D'Alessandro, R.; Focardi, E.; Frosali, S.; Genta, C.; Landi, G.; Lenzi, P.; Macchiolo, A.; Magini, N.; Parrini, G.; Scarlini, E.; Cerati, G.; Azzi, P.; Bacchetta, N.; Candelori, A.; Dorigo, T.; Kaminsky, A.; Karaevski, S.; Khomenkov, V.; Reznikov, S.; Tessaro, M.; Bisello, D.; De Mattia, M.; Giubilato, P.; Loreti, M.; Mattiazzo, S.; Nigro, M.; Paccagnella, A.; Pantano, D.; Pozzobon, N.; Tosi, M.; Bilei, G.M.; Checcucci, B.; Fano, L.; Servoli, L.; Ambroglini, F.; Babucci, E.; Benedetti, D.; Biasini, M.; Caponeri, B.; Covarelli, R.; Giorgi, M.; Lariccia, P.; Mantovani, G.; Marcantonini, M.; Postolache, V.; Santocchia, A.; Spiga, D.; Bagliesi, G.; Balestri, G.; Berretta, L.; Bianucci, S.; Boccali, T.; Bosi, F.; Bracci, F.; Castaldi, R.; Ceccanti, M.; Cecchi, R.; Cerri, C.; Cucoanes, A.S.; Dell'Orso, R.; Dobur, D.; Dutta, S.; Giassi, A.; Giusti, S.; Kartashov, D.; Kraan, A.; Lomtadze, T.; Lungu, G.A.; Magazzu, G.; Mammini, P.; Mariani, F.; Martinelli, G.; Moggi, A.; Palla, F.; Palmonari, F.; Petragnani, G.; Profeti, A.; Raffaelli, F.; Rizzi, D.; Sanguinetti, G.; Sarkar, S.; Sentenac, D.; Serban, A.T.; Slav, A.; Soldani, A.; Spagnolo, P.; Tenchini, R.; Tolaini, S.; Venturi, A.; Verdini, P.G.; Vos, M.; Zaccarelli, L.; Avanzini, C.; Basti, A.; Benucci, L.; Bocci, A.; Cazzola, U.; Fiori, F.; Linari, S.; Massa, M.; Messineo, A.; Segneri, G.; Tonelli, G.; Azzurri, P.; Bernardini, J.; Borrello, L.; Calzolari, F.; Foa, L.; Gennai, S.; Ligabue, F.; Petrucciani, G.; Rizzi, A.; Yang, Z.; Benotto, F.; Demaria, N.; Dumitrache, F.; Farano, R.; Borgia, M.A.; Castello, R.; Costa, M.; Migliore, E.; Romero, A.; Abbaneo, D.; Abbas, M.; Ahmed, I.; Akhtar, I.; Albert, E.; Bloch, C.; Breuker, H.; Butt, S.; Buchmuller, O.; Cattai, A.; Delaere, C.; Delattre, M.; Edera, L.M.; Engstrom, P.; Eppard, M.; Gateau, M.; Gill, K.; Giolo-Nicollerat, A.-S.; Grabit, R.; Honma, A.; Huhtinen, M.; Kloukinas, K.; Kortesmaa, J.; Kottelat, L.J.; Kuronen, A.; Leonardo, N.; Ljuslin, C.; Mannelli, M.; Masetti, L.; Marchioro, A.; Mersi, S.; Michal, S.; Mirabito, L.; Muffat-Joly, J.; Onnela, A.; Paillard, C.; Pal, I.; Pernot, J.F.; Petagna, P.; Petit, P.; Piccut, C.; Pioppi, M.; Postema, H.; Ranieri, R.; Ricci, D.; Rolandi, G.; Ronga, F.; Sigaud, C.; Syed, A.; Siegrist, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vander Donckt, M.; Vasey, F.; Alagoz, E.; Amsler, Claude; Chiochia, V.; Regenfus, Christian; Robmann, P.; Rochet, J.; Rommerskirchen, T.; Schmidt, A.; Steiner, S.; Wilke, L.; Church, I.; Cole, J.; Coughlan, J.; Gay, A.; Taghavi, S.; Tomalin, I.; Bainbridge, R.; Cripps, N.; Fulcher, J.; Hall, G.; Noy, M.; Pesaresi, M.; Radicci, V.; Raymond, D.M.; Sharp, P.; Stoye, M.; Wingham, M.; Zorba, O.; Goitom, I.; Hobson, P.R.; Reid, I.; Teodorescu, L.; Hanson, G.; Jeng, G.-Y.; Liu, H.; Pasztor, G.; Satpathy, A.; Stringer, R.; Mangano, B.; Affolder, K.; Affolder, T.; Allen, A.; Barge, D.; Burke, S.; Callahan, D.; Campagnari, C.; Crook, A.; D'Alfonso, M.; Dietch, J.; Garberson, Jeffrey Ford; Hale, D.; Incandela, H.; Incandela, J.; Jaditz, S.; Kalavase, P.; Kreyer, S.; Kyre, S.; Lamb, J.; Mc Guinnessr, C.; Mills, C.; Nguyen, H.; Nikolic, M.; Lowette, S.; Rebassoo, F.; Ribnik, J.; Richman, J.; Rubinstein, N.; Sanhueza, S.; Shah, Y.; Simms, L.; Staszak, D.; Stoner, J.; Stuart, D.; Swain, S.; Vlimant, J.-R.; White, D.; Ulmer, K.A.; Wagner, S.R.; Bagby, L.; Bhat, P.C.; Burkett, K.; Cihangir, S.; Gutsche, O.; Jensen, H.; Johnson, M.; Luzhetskiy, N.; Mason, D.; Miao, T.; Moccia, S.; Noeding, C.; Ronzhin, A.; Skup, E.; Spalding, W.J.; Spiegel, L.; Tkaczyk, S.; Yumiceva, F.; Zatserklyaniy, A.; Zerev, E.; Anghel, I.; Bazterra, V.E.; Gerber, C.E.; Khalatian, S.; Shabalina, E.; Baringer, Philip S.; Bean, A.; Chen, J.; Hinchey, C.; Martin, C.; Moulik, T.; Robinson, R.; Gritsan, A.V.; Lae, C.K.; Tran, N.V.; Everaerts, P.; Hahn, K.A.; Harris, P.; Nahn, S.; Rudolph, M.; Sung, K.; Betchart, B.; Demina, R.; Gotra, Y.; Korjenevski, S.; Miner, D.; Orbaker, D.; Christofek, L.; Hooper, R.; Landsberg, G.; Nguyen, D.; Narain, M.; Speer, T.; Tsang, K.V.

    2009-01-01

    The results of the CMS tracker alignment analysis are presented using the data from cosmic tracks, optical survey information, and the laser alignment system at the Tracker Integration Facility at CERN. During several months of operation in the spring and summer of 2007, about five million cosmic track events were collected with a partially active CMS Tracker. This allowed us to perform first alignment of the active silicon modules with the cosmic tracks using three different statistical approaches; validate the survey and laser alignment system performance; and test the stability of Tracker structures under various stresses and temperatures ranging from +15C to -15C. Comparison with simulation shows that the achieved alignment precision in the barrel part of the tracker leads to residual distributions similar to those obtained with a random misalignment of 50 (80) microns in the outer (inner) part of the barrel.

  3. Front-side biasing of n-in-p silicon strip detectors

    CERN Document Server

    Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

    2018-01-01

    Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

  4. Development and implementation of quality control strategies for CMS silicon strip tracker modules

    CERN Document Server

    Dirkes, Guido

    The LHC will explore physics at the energy frontier and will address many open questions in particle physics, like the search for the Higgs boson or Supersymmetry. For both high resolution track and vertex reconstruction is vital. The CMS silicon tracker consists of 15232 detector modules. Production and assembly of these will span two and a half years period, during which the quality control chain has to ensure functionality and reliability of the modules produced. The CMS group in Karlsruhe will produce and qualify 1600 modules. Therefore automatic test systems are developed and test strategies are worked out. Already during the RnD phase, first prototype tests were performed and some weak points of the design were uncovered. Two test stations are built. One focuses on a fast functionality test, including an active thermal cycle. The other focuses on debugging and repair requirements, including additional test options with lasers, radioactive sources, probes and infrared LEDs. For quality control measuremen...

  5. A Silicon Strip Detector for the Phase II High Luminosity Upgrade of the ATLAS Detector at the Large Hadron Collider

    CERN Document Server

    INSPIRE-00425747; McMahon, Stephen J

    2015-01-01

    ATLAS is a particle physics experiment at the Large Hadron Collider (LHC) that detects proton-proton collisions at a centre of mass energy of 14 TeV. The Semiconductor Tracker is part of the Inner Detector, implemented using silicon microstrip detectors with binary read-out, providing momentum measurement of charged particles with excellent resolution. The operation of the LHC and the ATLAS experiment started in 2010, with ten years of operation expected until major upgrades are needed in the accelerator and the experiments. The ATLAS tracker will need to be completely replaced due to the radiation damage and occupancy of some detector elements and the data links at high luminosities. These upgrades after the first ten years of operation are named the Phase-II Upgrade and involve a re-design of the LHC, resulting in the High Luminosity Large Hadron Collider (HL-LHC). This thesis presents the work carried out in the testing of the ATLAS Phase-II Upgrade electronic systems in the future strips tracker a...

  6. Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

    International Nuclear Information System (INIS)

    Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

    2014-01-01

    It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

  7. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

  8. A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

    Science.gov (United States)

    Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

    2018-02-01

    The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector

  9. Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

    International Nuclear Information System (INIS)

    Poettgens, M.

    2007-01-01

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

  10. Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

    CERN Document Server

    Pöttgens, Michael

    2007-01-01

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

  11. Development and implementation of quality control strategies for CMS silicon strip tracker modules

    International Nuclear Information System (INIS)

    Dirkes, G.

    2003-01-01

    The CMS group in Karlsruhe is involved in the construction of the silicon trackers end-caps and will produce and qualify the 1 600 modules of ring 5. Therefore automatic test systems for module qualification are developed and test strategies are worked out. For the electrical tests a complete readout system is developed, based on readout modules available within the collaboration and extended by home build modules. These are based on a modular approach with less complex functional units attached to a motherboard and includes key functionalities like clock and trigger generation and their distribution, high and low voltage supply and test signal generation usable with lasers or infrared LEDs. The motherboard is connected to a standard PC, hosting a fast ADC, interface cards to the motherboard and the front-end electronics. Already during the R and D phase of this readout system, first prototype tests were performed and some weak points of the design were uncovered, resulting in changes of the electronics design of the front end hybrids. Two test stations are built. The first one focuses on a fast functionality test, which includes an active thermal cycle with readout at -10 C performed for each individual module. The other test station focuses on debugging and repair requirements. It disposes of sufficient space for a flexible use of the system, including the possibility of additional test options with lasers, radioactive sources, probes and LEDs. For quality control measurements at module level it turned out, that LEDs are of good use: Besides external signal generation by running them in a pulsed way, they can be used for constant illumination of sensors, inducing an artificial leakage current. This led to the discovery of gain losses of complete readout chips induced by shorted AC coupling capacitances of several readout channels, which are called pinholes. Therefore pinholes must be unbonded from the front end preamplifier, which requires faultless

  12. Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

    CERN Document Server

    Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

    2005-01-01

    Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

  13. Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

    Science.gov (United States)

    Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

    2017-07-01

    Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

  14. Evaluation of the data of the HERA-B vertex detector with regards to the physical properties of the applied silicon strip counters

    International Nuclear Information System (INIS)

    Wagner, W.

    1999-01-01

    The HERA-B experiment at the DESY laboratory in Hamburg is dedicated to measuring CP-violation in the decays of neutral B-mesons. The primary purpose of the experiment in the measurement of the CP-asymmetry in the decay channel B 0 → J/ψK S 0 . In order to identify the B-mesons and to determine the time-dependent asymmetry, the decay length anti Δ anti l of the B-mesons must be measured to an accuracy of σ Δl ≤ 500 μm. To achieve this aim, HERA-B has a vertex detector which is based on double-sided silicon strip detectors mounted in a Roman pot system. One important specification of the vertex detector is to allow independent tracking with an efficiency above 95%. Therefore, it is required to select hits on the strip detectors with an efficiency above 99% and optimize the suppression of noise. This thesis describes a detailed investigation of the behaviour of the silicon strip detectors used in the vertex detector. The first part presents measurements performed in the laboratory using a tunable infrared dye laser to simulate the passage of charged particles through the detector. This includes measurements of the charge division between adjacent readout strips and mapping of the detector depletion. The results of the measurements agree excellently with the predictions from a detailed model calculation carried out in this thesis. The second part of the thesis the analysis of data recorded with the HERA-B vertex detector during the commissioning run of spring 1999. The analysis focusses on the investigation of cluster shapes and cluster sizes. In particular, the dependence of these distributions from the selection cuts is analyzed. Additionally, the differences between the two detector designs used, p-spray and p-stop detectors with intermediate strip or without respectively, are worked out. The measured distributions agree very well with the predictions from a model calculation taking all relevant detector parameters into account. The results of the data

  15. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    International Nuclear Information System (INIS)

    Ghosh, P.

    2015-01-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

  16. Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC)

    International Nuclear Information System (INIS)

    Moreau, St.

    2002-12-01

    The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

  17. SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

    International Nuclear Information System (INIS)

    Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

    2007-01-01

    We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60x60x1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5x5x6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ∼1 mm diameter 22 Na source, showed a focal ray tracing FWHM of 1 mm

  18. A time-based front-end ASIC for the silicon micro strip sensors of the P-bar ANDA Micro Vertex Detector

    International Nuclear Information System (INIS)

    Pietro, V. Di; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Stockmanns, T.; Zambanini, A.; Rivetti, A.; Rolo, M.D.

    2016-01-01

    The P-bar ANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA ( P-bar ANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels

  19. A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

    Science.gov (United States)

    Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

    2016-03-01

    The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

  20. Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC

    International Nuclear Information System (INIS)

    Guedon, M.

    2005-05-01

    This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

  1. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  2. Influence of cold rolling direction on texture, inhibitor and magnetic properties in strip-cast grain-oriented 3% silicon steel

    Energy Technology Data Exchange (ETDEWEB)

    Fang, F., E-mail: fangfengdbdx@163.com [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Lu, X.; Zhang, Y.X.; Wang, Y.; Jiao, H.T.; Cao, G.M.; Yuan, G.; Xu, Y.B. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, EL Paso, TX 79968 (United States); Wang, G.D. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China)

    2017-02-15

    An unconventional cold rolling scheme (inclined rolling at 0°, 30°, 45°, 90° during second-stage cold rolling process) was adopted to process grain-oriented silicon steel based on strip casting process. The influences of inclination angles on microstructure, texture, inhibitor and magnetic properties were studied by a combination of EBSD, XRD and TEM. It was found that the α-fiber texture was weakened and γ-fiber was strengthened in cold rolled sheet with increase in inclination angle. The primary recrystallization sheet exhibited more homogeneous microstructure with relatively strong γ-fiber, medium α-fiber texture, weak λ-fiber texture and Goss component at high inclination angles. Fine and homogeneous inhibitors were obtained after primary annealing with increase in inclination angle from 0° to 90° because of more uniform deformation after inclined rolling. The grain-oriented silicon steel experienced completely secondary recrystallization at various inclination angles after final annealing process, with superior magnetic properties at 0° and 90°. Furthermore, Goss nuclei capable of final secondary recrystallization in strip casting process newly formed both in-grain shear bands and grain boundaries region during second-stage cold rolling and subsequent annealing process, which is different from the well-accepted results that Goss texture originated from the subsurface layer of the hot rolled sheet or during intermediate annealing process. In addition, the Goss texture that nucleated in-grain shear bands was weaker but more accurate as compared to that in grain boundaries region. - Highlights: • Inclined cold rolling was adopted to process strip-cast grain-oriented silicon steel. • Influence of inclination angles on texture, inhibitor and magnetic properties was studied. • The initial texture was changed with respect to the inclination angle. • Homogeneous inhibitors were obtained after primary annealing at various inclination angles.

  3. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    International Nuclear Information System (INIS)

    Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

    2017-01-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  4. Development of dosimeters with rad-hard silicon diodes for high dose dosimetry

    International Nuclear Information System (INIS)

    Camargo, Fabio de

    2009-01-01

    In this work we report on results obtained with rad-hard Standard Float Zone (FZ), Diffusion Oxygenated Float Zone (DOFZ) and Magnetic Czochralski (MCz) silicon diodes in gamma radiation processing dosimetry. These p ± n-n + junction devices were manufactured by Okmetic Oyj. (Vantaa, Finland) and processed by the Microelectronics Center of Helsinki University of Technology in the framework of the CERN RD50 Collaboration. The dosimetric probes, based on FZ, DOFZ and M Cz devices, were designed to operate without bias voltage in the direct current mode as on-line radiation dosimeter. The irradiations were performed in the Radiation Technology Center (CTR) at IPEN-CNEN/SP using a 60 Co source (Gamma cell 220 - Nordion) with a dose rate around of 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. The results obtained showed a significant decrease in the photocurrent generated in all devices for total absorbed doses higher than approximately 25 kGy. To reduce this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy in order to saturate the trap production in the diode's sensitive volume. After pre-irradiation, despite of being less sensitive, all devices exhibited more stable photocurrent signals, even for total absorbed doses of 275 kGy. To monitor possible gamma radiation damage effects produced on the diodes, their dynamic leakage current and capacitance were measured as a function of the absorbed dose. (author)

  5. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

    Energy Technology Data Exchange (ETDEWEB)

    Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

  6. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  7. High coincidence-to-accidental ratio continuous-wave photon-pair generation in a grating-coupled silicon strip waveguide

    DEFF Research Database (Denmark)

    Guo, Kai; Christensen, Erik Nicolai; Christensen, Jesper Bjerge

    2017-01-01

    We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber......-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of g(H)((2)) (0) = 0.12, demonstrating that our source operates in the single- photon regime with low noise. (C) 2017 The Japan Society of Applied Physics...

  8. Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

    CERN Document Server

    INSPIRE-00407830; Blue, Andrew; Bates, Richard; Bloch, Ingo; Diez, Sergio; Fernandez-Tejero, Javier; Fleta, Celeste; Gallop, Bruce; Greenall, Ashley; Gregor, Ingrid-Maria; Hara, Kazuhiko; Ikegami, Yoichi; Lacasta, Carlos; Lohwasser, Kristin; Maneuski, Dzmitry; Nagorski, Sebastian; Pape, Ian; Phillips, Peter W.; Sperlich, Dennis; Sawhney, Kawal; Soldevila, Urmila; Ullan, Miguel; Unno, Yoshinobu; Warren, Matt

    2016-07-29

    The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1x10^35 cm^-2 s^-1 after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1, requiring the tracking detectors to withstand hadron equivalences to over 1x10^16 1 MeV neutrons per cm^2. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 micron FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 micron thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 micron thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout...

  9. Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

    2017-03-15

    A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

  10. Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

    Energy Technology Data Exchange (ETDEWEB)

    Poettgens, M.

    2007-11-22

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

  11. A silicon photo-multiplier signal readout using strip-line and waveform sampling for Positron Emission Tomography

    Science.gov (United States)

    Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Kao, C.-M.

    2016-09-01

    A strip-line and waveform sampling based readout is a signal multiplexing method that can efficiently reduce the readout channels while fully exploiting the fast time characteristics of photo-detectors such as the SiPM. We have applied this readout method for SiPM-based time-of-flight (TOF) positron emission tomography (PET) detectors. We have prototyped strip-line boards in which 8 SiPMs (pitch 5.2 mm) are connected by using a single strip-line, and the signals appearing at the ends of the strip-line are acquired by using the DRS4 waveform sampler at a nominal sampling frequency of 1-5 GS/s. Experimental tests using laser and LYSO scintillator are carried out to assess the performance of the strip-line board. Each SiPM position, which is inferred from the arrival time difference of the two signals at the ends of the strip-line, is well identified with 2.6 mm FWHM resolution when the SiPMs are coupled to LYSO crystals and irradiated by a 22Na source. The average energy and coincidence time resolution corresponding to 511 keV photons are measured to be ∼32% and ∼510 ps FWHM, respectively, at a 5.0 GS/s DRS4 sampling rate. The results show that the sampling rate can be lowered to 1.5 GS/s without performance degradation. These encouraging initial test results indicate that the strip-line and waveform sampling readout method is applicable for SiPM-based TOF PET development.

  12. Noise evaluation of silicon strip super-module with ABCN250 readout chips for the ATLAS detector upgrade at the High Luminosity LHC

    Energy Technology Data Exchange (ETDEWEB)

    Todome, K., E-mail: todome@hep.phys.titech.ac.jp [Department of Physics, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Clark, A.; Barbier, G.; Cadoux, F.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Iacobucci, G.; La Marra, D.; Perrin, E.; Weber, M. [DPNC, University of Geneva, CH-1211 Geneva 4 (Switzerland); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Takashima, R. [Department of Science Education, Kyoto University of Education, Kyoto 612-8522 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Tojo, J. [Department of Physics, Faculty of Science, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); Kono, T. [Ochadai Academic Production, Ochanomizu University, 2-1-1, Otsuka, Bunkyo-ku, Tokyo 112-8610 (Japan); Solid State Div., Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 435-8558 (Japan); and others

    2016-09-21

    Toward High Luminosity LHC (HL-LHC), the whole ATLAS inner tracker will be replaced, including the semiconductor tracker (SCT) which is the silicon micro strip detector for tracking charged particles. In development of the SCT, integration of the detector is the important issue. One of the concepts of integration is the “super-module” in which individual modules are assembled to produce the SCT ladder. A super-module prototype has been developed to demonstrate its functionality. One of the concerns in integrating the super-modules is the electrical coupling between each module, because it may increase intrinsic noise of the system. To investigate the electrical performance of the prototype, the new Data Acquisition (DAQ) system has been developed by using SEABAS. The electric performance of the super-module prototype, especially the input noise and random noise hit rate, was investigated by using SEABAS system.

  13. The ATLAS Tracker Upgrade: Short Strips Detectors for the SLHC

    CERN Document Server

    Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

    2009-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

  14. Radiation hardness of silicon detectors - a challenge from high-energy physics

    CERN Document Server

    Lindström, G; Fretwurst, E

    1999-01-01

    An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

  15. Evaluation of stiffness feedback for hard nodule identification on a phantom silicone model.

    Science.gov (United States)

    Li, Min; Konstantinova, Jelizaveta; Xu, Guanghua; He, Bo; Aminzadeh, Vahid; Xie, Jun; Wurdemann, Helge; Althoefer, Kaspar

    2017-01-01

    Haptic information in robotic surgery can significantly improve clinical outcomes and help detect hard soft-tissue inclusions that indicate potential abnormalities. Visual representation of tissue stiffness information is a cost-effective technique. Meanwhile, direct force feedback, although considerably more expensive than visual representation, is an intuitive method of conveying information regarding tissue stiffness to surgeons. In this study, real-time visual stiffness feedback by sliding indentation palpation is proposed, validated, and compared with force feedback involving human subjects. In an experimental tele-manipulation environment, a dynamically updated color map depicting the stiffness of probed soft tissue is presented via a graphical interface. The force feedback is provided, aided by a master haptic device. The haptic device uses data acquired from an F/T sensor attached to the end-effector of a tele-manipulated robot. Hard nodule detection performance is evaluated for 2 modes (force feedback and visual stiffness feedback) of stiffness feedback on an artificial organ containing buried stiff nodules. From this artificial organ, a virtual-environment tissue model is generated based on sliding indentation measurements. Employing this virtual-environment tissue model, we compare the performance of human participants in distinguishing differently sized hard nodules by force feedback and visual stiffness feedback. Results indicate that the proposed distributed visual representation of tissue stiffness can be used effectively for hard nodule identification. The representation can also be used as a sufficient substitute for force feedback in tissue palpation.

  16. Evaluation of stiffness feedback for hard nodule identification on a phantom silicone model.

    Directory of Open Access Journals (Sweden)

    Min Li

    Full Text Available Haptic information in robotic surgery can significantly improve clinical outcomes and help detect hard soft-tissue inclusions that indicate potential abnormalities. Visual representation of tissue stiffness information is a cost-effective technique. Meanwhile, direct force feedback, although considerably more expensive than visual representation, is an intuitive method of conveying information regarding tissue stiffness to surgeons. In this study, real-time visual stiffness feedback by sliding indentation palpation is proposed, validated, and compared with force feedback involving human subjects. In an experimental tele-manipulation environment, a dynamically updated color map depicting the stiffness of probed soft tissue is presented via a graphical interface. The force feedback is provided, aided by a master haptic device. The haptic device uses data acquired from an F/T sensor attached to the end-effector of a tele-manipulated robot. Hard nodule detection performance is evaluated for 2 modes (force feedback and visual stiffness feedback of stiffness feedback on an artificial organ containing buried stiff nodules. From this artificial organ, a virtual-environment tissue model is generated based on sliding indentation measurements. Employing this virtual-environment tissue model, we compare the performance of human participants in distinguishing differently sized hard nodules by force feedback and visual stiffness feedback. Results indicate that the proposed distributed visual representation of tissue stiffness can be used effectively for hard nodule identification. The representation can also be used as a sufficient substitute for force feedback in tissue palpation.

  17. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    CERN Document Server

    Moll, Michael; Lindström, G

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

  18. Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, Eda

    2017-02-15

    In this thesis, the collected charge and the Lorentz angle on non-irradiated and the irradiated miniature of the current test silicon micro-strip sensors (ATLAS12) of the future ATLAS inner tracker are measured. The samples are irradiated up to 5 x 10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and some of them also measured after short-term annealing (80 min at 60 C). The measurements are performed at the DESY II test beam, which provides the advantage of tracking to suppress noise hits. The collected charge is measured at various bias voltages for each sample. The results are compared with the measurements performed using a Sr{sup 90} radioactive source. It is shown that the measurements with beam and radioactive source are consistent with each other, and the advantage of tracking at the beam measurements provides the measurement of collected charge on highly irradiated sensors at lower bias voltages. The Lorentz angle is measured for each sample at different magnetic field strengths between 0 T and 1 T, the results are extrapolated to 2 T, which is the magnetic field in the inner tracker of the ATLAS detector. Most of the measurements are performed at -500 V bias voltage, which is the planned operation bias voltage of the future strip tracker. Some samples are also measured at different bias voltages to observe the effect of bias voltage on the Lorentz angle. The signal reconstruction of the strip sensors are performed using the lowest possible signal-to-noise thresholds. For non-irradiated samples, the measured Lorentz angle agrees with the prediction of the BFK model. On the irradiated samples, the results suggest that the Lorentz angle decreases with increasing bias voltage due to the increasing electric field in the sensor. The Lorentz angle decreases with increasing irradiation level; however, if the sample is under-depleted, the effect of electric field dominates and the Lorentz angle increases. Once the irradiation level becomes too high, hence the collected charge

  19. A pixel segmented silicon strip detector for ultra fast shaping at low noise and low power consumption

    International Nuclear Information System (INIS)

    Misiakos, K.; Kavadias, S.

    1996-01-01

    A new radiation imaging device is proposed based on strips segmented into small pixels. Every pixel contains a submicron transistor that is normally biased in weak inversion. The ionization charge, upon collection by the pixel, changes the bias of the transistor to strong inversion and supplies a current up to several tens of a microA. This is a consequence of the small pixel capacitance (12 fF). The drains and sources of the transistors on the same row and column are shorted to bus lines that effectively become the Y and X coordinates. These bus lines are connected to the off chip ICON amplifiers to provide a 10 ns peaking time at a noise of about 150 electrons and 1 nW power consumption, for a 10x10 cm 2 detector and a MIP excitation. The noise performance is dominated by the ICON transistors. The cross talk between adjacent strips can be kept at a few percentage points provided a low transistor bias current is used

  20. Evaluation of stiffness feedback for hard nodule identification on a phantom silicone model

    OpenAIRE

    Li, M.; Konstantinova, J.; Xu, G.; He, B.; Aminzadeh, V.; Xie, J.; Wurdemann, H.; Althoefer, K.

    2017-01-01

    Haptic information in robotic surgery can significantly improve clinical outcomes and help detect hard soft-tissue inclusions that indicate potential abnormalities. Visual representation of tissue stiffness information is a cost-effective technique. Meanwhile, direct force feedback, although considerably more expensive than visual representation, is an intuitive method of conveying information regarding tissue stiffness to surgeons. In this study, real-time visual stiffness feedback by slidin...

  1. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    International Nuclear Information System (INIS)

    Moll, M.; Fretwurst, E.; Lindstroem, G.

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2x10 14 to 9x10 17 cm -3 have been irradiated with fast neutrons up to a fluence of 2x10 15 cm -2 . Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10% of the initial doping concentration for [O i ]=9x10 17 cm -3 , while for normal detector grade material with [O i ] below 5x10 16 cm -3 that value is 60-90%. Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentration with an averaged introduction rate of (1.49±0.03)x10 -2 cm -1 . Only one material was found exhibiting a significantly smaller value of about 0.6x10 -2 cm -1 and thus indicating the possibility to suppress the radiation-induced acceptor creation by material modification. Finally, we show that the experimental findings disagree in several important aspects with predictions made by microscopic defect kinetics models, leaving the physical background of some of the measured data as an open question

  2. Determination of adhesion between thermoplastic and liquid silicone rubbers in hard-soft-combinations via mechanical peeling test

    Science.gov (United States)

    Kühr, C.; Spörrer, A.; Altstädt, V.

    2014-05-01

    The production of hard-soft-combinations via multi injection molding gained more and more importance in the last years. This is attributed to different factors. One principle reason is that the use of two-component injection molding technique has many advantages such as cancelling subsequent and complex steps and shortening the process chain. Furthermore this technique allows the combination of the properties of the single components like the high stiffness of the hard component and the elastic properties of the soft component. Because of the incompatibility of some polymers the adhesion on the interface has to be determined. Thereby adhesion is not only influenced by the applied polymers, but also by the injection molding parameters and the characteristics of the mold. Besides already known combinations of thermoplastics with thermoplastic elastomers (TPE), there consists the possibility to apply liquid silicone rubber (LSR) as soft component. A thermoplastic/LSR combination gains in importance due to the specific advantages of LSR to TPE. The faintly adhesion between LSR and thermoplastics is currently one of the key challenges when dealing with those combinations. So it is coercively necessary to improve adhesion between the two components by adding an adhesion promoter. To determine the promoters influence, it is necessary to develop a suitable testing method to investigate e.g. the peel resistance. The current German standard "VDI Richtlinie 2019', which is actually only employed for thermoplastic/TPE combinations, can serve as a model to determine the adhesion of thermoplastic/LSR combinations.

  3. Validation of Kalman Filter alignment algorithm with cosmic-ray data using a CMS silicon strip tracker endcap

    CERN Document Server

    Sprenger, D; Adolphi, R; Brauer, R; Feld, L; Klein, K; Ostaptchuk, A; Schael, S; Wittmer, B

    2010-01-01

    A Kalman Filter alignment algorithm has been applied to cosmic-ray data. We discuss the alignment algorithm and an experiment-independent implementation including outlier rejection and treatment of weakly determined parameters. Using this implementation, the algorithm has been applied to data recorded with one CMS silicon tracker endcap. Results are compared to both photogrammetry measurements and data obtained from a dedicated hardware alignment system, and good agreement is observed.

  4. Effect of Silicon Nitride Incorporation on Microstructure and Hardness of Ni-Co Metal Matrix Nanocomposite

    Directory of Open Access Journals (Sweden)

    Ridwan

    2015-01-01

    Full Text Available Ni-Co-Si3N4 nanocomposite coatings were prepared by electrodeposition technique. The deposition was performed at 50 mA cm-2 on copper substrate. The working temperature of electrodepostion was constant at 500C in an acidic environment of pH 4. The effects of silicon in the nickel-cobalt metal matrix composite were investigated. Energy dispersive X-ray spectroscopy was used to determine the composition. The Co content in the coatings is in the range 27-49 at.%. The phase present in the Ni-Co-Si3N4 were examined with an X-ray diffraction analysis. All the reflection patterns indicate that the coatings are having face-centered cubic (fcc structure. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increases with increasing silicon content. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increased from 549 HV for Nickel-cobalt alloy coating to 641 HV for Ni-Co-Si3N4 nanocomposite coating with 5.47 at.% Si.

  5. A new strips tracker for the upgraded ATLAS ITk detector

    Science.gov (United States)

    David, C.

    2018-01-01

    The ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the fluences and radiation levels will be higher by as much as a factor of ten. The new sub-detectors must thus be faster, of larger area, more segmented and more radiation hard while the amount of inactive material should be minimized and the power supply to the front-end systems should be increased. For those reasons, the current inner tracker of the ATLAS detector will be fully replaced by an all-silicon tracking system that consists of a pixel detector at small radius close to the beam line and a large area strip tracker surrounding it. This document gives an overview of the design of the strip inner tracker (Strip ITk) and summarises the intensive R&D activities performed over the last years by the numerous institutes within the Strips ITk collaboration. These studies are accompanied with a strong prototyping effort to contribute to the optimisation of the Strip ITk's structure and components. This effort culminated recently in the release of the ATLAS Strips ITk Technical Design Report (TDR).

  6. Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

    2010-07-01

    Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

  7. Effect of cutting temperature on hardness of SiC and diamond in the nano-cutting process of monocrystalline silicon

    Science.gov (United States)

    Wang, Jiachun; Li, Yuntao; Liu, Xiaoxuan; Lv, Maoqiang

    2016-10-01

    In the process of cutting silicon by natural diamond tools, groove wear happens on the flank face of cutting tool frequently.Scholars believe that one of the wear reasons is mechanical scratching effect by hard particles like SiC. To reveal the mechanical scratching mechanism, it is essential to study changes in the mechanical properties of hard particles and diamond, especially the effect of cutting temperature on hardness of diamond and hard particles. Molecular dynamics (MD) model that contact-zone temperature between tool and workpiece was calculated by dividing zone while nano-cutting monocrystalline silicon was established, cutting temperature values in different regions were computed as the simulation was carried out.On this basis, the models of molecular dynamics simulation of SiC and diamond were established separately with setting the initial temperature to room temperature. The laws of length change of C-C bond and Si-C bond varing with increase of simulation temperature were studied. And drawing on predecessors' research on theoretical calculation of hardness of covalent crystals and the relationship between crystal valence electron density and bond length, the curves that the hardness of diamond and SiC varing with bond length were obtained. The effect of temperature on the hardness was calculated. Results show that, local cutting temperature can reach 1300K.The rise in cutting temperature leaded to a decrease in the diamond local atomic clusters hardness,SiC local atomic clusters hardness increased. As the cutting temperature was more than 1100K,diamond began to soften, the local clusters hardness was less than that of SiC.

  8. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    Energy Technology Data Exchange (ETDEWEB)

    Currás, Esteban, E-mail: ecurrasr@cern.ch [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Fernández, Marcos [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Gallrapp, Christian [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Gray, Lindsey [Fermilab, Wilson Street and Kirk Road, Batavia, IL 60510-5011, Illinois (United States); Mannelli, Marcello [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Meridiani, Paolo [Istituto Nazionale Di Fisica Nucleare – Sezione di Roma, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Moll, Michael [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Nourbakhsh, Shervin [University of Minnesota, Minneapolis, MN 55455 (United States); Scharf, Christian [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Silva, Pedro [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Steinbrueck, Georg [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Fatis, Tommaso Tabarelli de [Istituto Nazionale di Fisica Nucleare – Sezione di Milano-Bicocca Piazza della Scienza 3, 20126 Milano (Italy); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb{sup −1} per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm{sup 2} and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb{sup −1}, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10{sup 16} neq/cm{sup 2}. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10{sup 16} neq/cm{sup 2} is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  9. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  10. Radiation hardness and precision timing study of Silicon detectors for the CMS High Granularity Calorimeter (HGC)

    CERN Document Server

    Curras, E; Gallrapp, C; Gray, L; Mannelli, M; Meridiani, P; Moll, M; Nourbakhsh, S; Scharf, C; Silva, P; Steinbrueck, G; Tabarelli de Fatis, T; Vila, I

    2017-01-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb^−1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm^2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb^−1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10^16 neq/cm^2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μ...

  11. Radiation hardness and precision timing study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

    CERN Document Server

    Curras Rivera, Esteban

    2016-01-01

    The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering about 250 fba-1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 30 layers of silicon detectors totalling 600m^2. The sensors will be realized as pad detectors with cell sizes of between 0.5-1.0 cm^2 and an active thickness between 100 um and 300 um depending on their location in the endcaps the thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fba-1, the electromagnetic calorimetry will sustain integ...

  12. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10 sup 1 sup 4 n/cm sup 2

    CERN Document Server

    Li Zheng; Eremin, V; Li, C J; Verbitskaya, E

    1999-01-01

    Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm sup 2 areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k OMEGA cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2x10 sup 1 sup 4 n/cm sup 2) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k OMEGA cm (300 mu m thick) can be fully depleted before and after an irradiation of 2x10 sup 1 sup 4 n/cm sup 2. For a 500 mu m pitch strip detector made of 2.7 k OMEGA cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7x10 sup 1 sup 3 n/cm sup 2 irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We als...

  13. Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

  14. Silicon sensor probing and radiation studies for the LHCb silicon tracker

    International Nuclear Information System (INIS)

    Lois, Cristina

    2006-01-01

    The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

  15. Energy Calibration of a Silicon-Strip Detector for Photon-Counting Spectral CT by Direct Usage of the X-ray Tube Spectrum

    Science.gov (United States)

    Liu, Xuejin; Chen, Han; Bornefalk, Hans; Danielsson, Mats; Karlsson, Staffan; Persson, Mats; Xu, Cheng; Huber, Ben

    2015-02-01

    The variation among energy thresholds in a multibin detector for photon-counting spectral CT can lead to ring artefacts in the reconstructed images. Calibration of the energy thresholds can be used to achieve homogeneous threshold settings or to develop compensation methods to reduce the artefacts. We have developed an energy-calibration method for the different comparator thresholds employed in a photon-counting silicon-strip detector. In our case, this corresponds to specifying the linear relation between the threshold positions in units of mV and the actual deposited photon energies in units of keV. This relation is determined by gain and offset values that differ for different detector channels due to variations in the manufacturing process. Typically, the calibration is accomplished by correlating the peak positions of obtained pulse-height spectra to known photon energies, e.g. with the aid of mono-energetic x rays from synchrotron radiation, radioactive isotopes or fluorescence materials. Instead of mono-energetic x rays, the calibration method presented in this paper makes use of a broad x-ray spectrum provided by commercial x-ray tubes. Gain and offset as the calibration parameters are obtained by a regression analysis that adjusts a simulated spectrum of deposited energies to a measured pulse-height spectrum. Besides the basic photon interactions such as Rayleigh scattering, Compton scattering and photo-electric absorption, the simulation takes into account the effect of pulse pileup, charge sharing and the electronic noise of the detector channels. We verify the method for different detector channels with the aid of a table-top setup, where we find the uncertainty of the keV-value of a calibrated threshold to be between 0.1 and 0.2 keV.

  16. The silicon vertex tracker for star and future applications of silicon drift detectors

    International Nuclear Information System (INIS)

    Bellwied, Rene

    2001-01-01

    The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

  17. Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

    Energy Technology Data Exchange (ETDEWEB)

    Guedon, M

    2005-05-15

    This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

  18. Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

    Energy Technology Data Exchange (ETDEWEB)

    Guedon, M

    2005-05-15

    This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

  19. T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration

    CERN Document Server

    Printz, Martin

    2015-01-01

    However, n-in-p detectors necessarily need an isolation layer of the n+ strips due to an accumula- tion layer of electrons caused by positive charge in the SiO$_2$ at the sensor surface. An additional implantation of acceptors like boron between the n+ strips cuts the co...

  20. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x1014 n/cm2

    International Nuclear Information System (INIS)

    Li Zheng; Dezillie, B.; Eremin, V.; Li, C.J.; Verbitskaya, E.

    1999-01-01

    Test strip detectors of 125 μm, 500 μm, and 1 mm pitches with about 1 cm 2 areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 kΩ cm). Detectors of 500 μm pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2x10 14 n/cm 2 ) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 kΩ cm (300 μm thick) can be fully depleted before and after an irradiation of 2x10 14 n/cm 2 . For a 500 μm pitch strip detector made of 2.7 kΩ cm tested with an 1030 nm laser light with 200 μm spot size, the position reconstruction error is about 14 μm before irradiation, and 17 μm after about 1.7x10 13 n/cm 2 irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 μm absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction

  1. The ATLAS Tracker Upgrade Short Strips Detectors for the sLHC

    CERN Document Server

    Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

    2010-01-01

    It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

  2. Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys Sentaurus™ Pre-Irradiation Simulation

    CERN Document Server

    Cammarata, Simone

    2017-01-01

    Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys Sentaurus™ simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project.

  3. Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

    CERN Document Server

    Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

    2002-01-01

    Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

  4. Design, fabrication and characterization of multi-guard-ring furnished p+n-n+ silicon strip detectors for future HEP experiments

    Science.gov (United States)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-07-01

    Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n-n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

  5. The effects of microalloying with silicon and germanium on microstructure and hardness of a commercial aluminum alloy

    Directory of Open Access Journals (Sweden)

    VESNA MAKSIMOVIC

    2003-11-01

    Full Text Available The effect of small additions of Si and Ge on the microstructure and hardness was investigated during aging of a commercial 2219 aluminum alloy. It was found that for the same level of microalloying in alloy 2219SG (containing Si and Ge, a maximum hardness was achieved 3 times faster than in alloy 2219S (without Ge. The accelerated precipitation kinetics is a consequence of the presence of fine Si–Ge particles, serving as heterogeneous precipitation sites for q” strengthening particles.

  6. Stripping Voltammetry

    Science.gov (United States)

    Lovrić, Milivoj

    Electrochemical stripping means the oxidative or reductive removal of atoms, ions, or compounds from an electrode surface (or from the electrode body, as in the case of liquid mercury electrodes with dissolved metals) [1-5]. In general, these atoms, ions, or compounds have been preliminarily immobilized on the surface of an inert electrode (or within it) as the result of a preconcentration step, while the products of the electrochemical stripping will dissolve in the electrolytic solution. Often the product of the electrochemical stripping is identical to the analyte before the preconcentration. However, there are exemptions to these rules. Electroanalytical stripping methods comprise two steps: first, the accumulation of a dissolved analyte onto, or in, the working electrode, and, second, the subsequent stripping of the accumulated substance by a voltammetric [3, 5], potentiometric [6, 7], or coulometric [8] technique. In stripping voltammetry, the condition is that there are two independent linear relationships: the first one between the activity of accumulated substance and the concentration of analyte in the sample, and the second between the maximum stripping current and the accumulated substance activity. Hence, a cumulative linear relationship between the maximum response and the analyte concentration exists. However, the electrode capacity for the analyte accumulation is limited and the condition of linearity is satisfied only well below the electrode saturation. For this reason, stripping voltammetry is used mainly in trace analysis. The limit of detection depends on the factor of proportionality between the activity of the accumulated substance and the bulk concentration of the analyte. This factor is a constant in the case of a chemical accumulation, but for electrochemical accumulation it depends on the electrode potential. The factor of proportionality between the maximum stripping current and the analyte concentration is rarely known exactly. In fact

  7. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    International Nuclear Information System (INIS)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

    2016-01-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  8. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Science.gov (United States)

    Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

    2016-09-01

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  9. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

    2016-09-21

    ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

  10. Hard times; Schwere Zeiten

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Markus

    2012-10-02

    The prices of silicon and solar wafers keep dropping. According to market research specialist IMS research, this is the result of weak traditional solar markets and global overcapacities. While many manufacturers are facing hard times, big producers of silicon are continuing to expand.

  11. LYCORIS - A Large Area Strip Telescope

    CERN Document Server

    Krämer, U; Stanitzki, M; Wu, M

    2018-01-01

    The LYCORIS Large Area Silicon Strip Telescope for the DESY II Test Beam Facility is presented. The DESY II Test Beam Facility provides elec- tron and positron beams for beam tests of up to 6 GeV. A new telescope with a large 10 × 20 cm2 coverage area based on a 25 μm pitch strip sensor is to be installed within the PCMAG 1 T solenoid. The current state of the system is presented.

  12. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

    International Nuclear Information System (INIS)

    Lindstroem, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

    2001-01-01

    This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstroem et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail

  13. Radiation hardness test of un-doped CsI crystals and Silicon Photomultipliers for the Mu2e calorimeter

    Science.gov (United States)

    Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Loreti, S.; Miscetti, S.; Pillon, M.; Sarra, I.

    2017-11-01

    The Mu2e calorimeter is composed by 1400 un-doped CsI crystals coupled to large area UV extended Silicon Photomultipliers arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position. It should also be fast enough to handle the high rate background and it must operate and survive in a high radiation environment. Simulation studies estimated that, in the hottest regions, each crystal will absorb a dose of 300 Gy and will be exposed to a neutron fluency of 6 × 1011 n/cm2 in 3 years of running. Test of un-doped CsI crystals irradiated up to 900 Gy and to a neutron fluency up to 9 × 1011 n/cm2 have been performed at CALLIOPE and FNG ENEA facilities in Italy. We present our study on the variation of light yield (LY) and longitudinal response uniformity (LRU) of these crystals after irradiation. The ionization dose does not modify LRU while a 20% reduction in LY is observed at 900 Gy. Similarly, the neutron flux causes an acceptable LY deterioration (≤ 15%). A neutron irradiation test on different types of SIPMs (two different array models from Hamamatsu and one from FBK) have also been carried out by measuring the variation of the leakage current and the charge response to an ultraviolet led. We concluded that, in the experiment, we will need to cool down the SIPMs to 0 °C reduce the leakage current to an acceptable level.

  14. Work Hard / Play Hard

    OpenAIRE

    Burrows, J.; Johnson, V.; Henckel, D.

    2016-01-01

    Work Hard / Play Hard was a participatory performance/workshop or CPD experience hosted by interdisciplinary arts atelier WeAreCodeX, in association with AntiUniversity.org. As a socially/economically engaged arts practice, Work Hard / Play Hard challenged employees/players to get playful, or go to work. 'The game changes you, you never change the game'. Employee PLAYER A 'The faster the better.' Employer PLAYER B

  15. The silicon sensor for the compact muon solenoid tracker. Control of the fabrication process

    International Nuclear Information System (INIS)

    Manolescu, Florentina; Mihul, Alexandru; Macchiolo, Anna

    2005-01-01

    The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. The inner tracking system of this experiment consists of the world largest Silicon Strip Tracker (SST). In total, 24,244 silicon sensors are implemented covering an area of 206 m 2 . To construct this large system and to ensure its functionality for the full lifetime of ten years under the hard LHC condition, a detailed quality assurance program has been developed. This paper describes the strategy of the Process Qualification Control to monitor the stability of the fabrication process throughout the production phase and the results obtained are shown. (authors)

  16. ATLAS SCT - Progress on the Silicon Modules

    CERN Multimedia

    Tyndel, M.

    The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

  17. Short p-type silicon microstrip detectors in 3D-stc technology

    Energy Technology Data Exchange (ETDEWEB)

    Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

    2008-10-21

    The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

  18. Varicose vein stripping

    Science.gov (United States)

    ... stripping; Venous reflux - vein stripping; Venous ulcer - veins Patient Instructions Surgical wound care - open Varicose veins - what to ask your doctor Images Circulatory system References American Family Physician. Management of varicose veins. www.aafp.org/afp/2008/ ...

  19. Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC); Conception d'un algorithme de reconstruction de vertex pour les donnees de CMS. Etude de detecteurs gazeux (MSGC) et silicium a micropistes

    Energy Technology Data Exchange (ETDEWEB)

    Moreau, St

    2002-12-01

    The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

  20. Quantitative comparison of 3 enamel-stripping devices in vitro: how precisely can we strip teeth?

    Science.gov (United States)

    Johner, Alexander Marc; Pandis, Nikolaos; Dudic, Alexander; Kiliaridis, Stavros

    2013-04-01

    In this in-vitro study, we aimed to investigate the predictability of the expected amount of stripping using 3 common stripping devices on premolars. One hundred eighty extracted premolars were mounted and aligned in silicone. Tooth mobility was tested with Periotest (Medizintechnik Gulden, Modautal, Germany) (8.3 ± 2.8 units). The selected methods for interproximal enamel reduction were hand-pulled strips (Horico, Hapf Ringleb & Company, Berlin, Germany), oscillating segmental disks (O-drive-OD 30; KaVo Dental, Biberach, Germany), and motor-driven abrasive strips (Orthofile; SDC Switzerland, Lugano-Grancia, Switzerland). With each device, the operator intended to strip 0.1, 0.2, 0.3, or 0.4 mm on the mesial side of 15 teeth. The teeth were scanned before and after stripping with a 3-dimensional laser scanner. Superposition and measurement of stripped enamel on the most mesial point of the tooth were conducted with Viewbox software (dHal Software, Kifissia, Greece). The Wilcoxon signed rank test and the Kruskal-Wallis test were applied; statistical significance was set at alpha ≤ 0.05. Large variations between the intended and the actual amounts of stripped enamel, and between stripping procedures, were observed. Significant differences were found at 0.1 mm of intended stripping (P ≤ 0.05) for the hand-pulled method and at 0.4 mm of intended stripping (P ≤ 0.001 to P = 0.05) for all methods. For all scenarios of enamel reduction, the actual amount of stripping was less than the predetermined and expected amount of stripping. The Kruskal-Wallis analysis showed no significant differences between the 3 methods. There were variations in the stripped amounts of enamel, and the stripping technique did not appear to be a significant predictor of the actual amount of enamel reduction. In most cases, actual stripping was less than the intended amount of enamel reduction. Copyright © 2013 American Association of Orthodontists. Published by Mosby, Inc. All rights

  1. Hard electronics; Hard electronics

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

  2. Silicon microstrip detectors in 3D technology for the sLHC

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2009-08-01

    The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10{sup 15}N{sub eq}/cm{sup 2}, hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

  3. Silicon microstrip detectors in 3D technology for the sLHC

    International Nuclear Information System (INIS)

    Parzefall, Ulrich; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor; Parkes, Chris; Pennicard, David; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

    2009-01-01

    The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10 15 N eq /cm 2 , hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

  4. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  5. Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys SentaurusTM Pre-Irradiation Simulation

    CERN Document Server

    Cammarata, Simone

    2017-01-01

    Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys SentaurusTM simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project. Index Terms—Silicon Photonics, Mach-Zehnder modulator, electro-optic simulation, Synopsys SentaurusTM, electro-optic measurement, HEP.

  6. Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

    International Nuclear Information System (INIS)

    Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C.

    1995-01-01

    The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0 degrees C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0 degrees C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length

  7. Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

    1995-02-01

    The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

  8. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  9. Data acquisition software for the CMS strip tracker

    International Nuclear Information System (INIS)

    Bainbridge, R; Cripps, N; Fulcher, J; Radicci, V; Wingham, M; Baulieu, G; Bel, S; Delaere, C; Drouhin, F; Gill, K; Mirabito, L; Cole, J; Jesus, A C A; Giassi, A; Giordano, D; Gross, L; Hahn, K; Mersi, S; Nikolic, M; Tkaczyk, S

    2008-01-01

    The CMS silicon strip tracker, providing a sensitive area of approximately 200 m 2 and comprising 10 million readout channels, has recently been completed at the tracker integration facility at CERN. The strip tracker community is currently working to develop and integrate the online and offline software frameworks, known as XDAQ and CMSSW respectively, for the purposes of data acquisition and detector commissioning and monitoring. Recent developments have seen the integration of many new services and tools within the online data acquisition system, such as event building, online distributed analysis, an online monitoring framework, and data storage management. We review the various software components that comprise the strip tracker data acquisition system, the software architectures used for stand-alone and global data-taking modes. Our experiences in commissioning and operating one of the largest ever silicon micro-strip tracking systems are also reviewed

  10. Development of Silicon Detectors for the High Luminosity LHC

    International Nuclear Information System (INIS)

    Eichhorn, Thomas Valentin

    2015-07-01

    The Large Hadron Collider (LHC) at CERN will be upgraded to a High Luminosity LHC in the year 2022, increasing the instantaneous luminosity by a factor of five. This will have major impacts on the experiments at the LHC, such as the Compact Muon Solenoid (CMS) experiment, and especially for their inner silicon tracking systems. Among other things, the silicon sensors used therein will be exposed to unprecedented levels of radiation damage, necessitating a replacement of the entire tracking detector. In order to maintain the excellent current performance, a new tracking detector has to be equipped with sensors of increased radiation hardness and higher granularity. The CMS experiment is undertaking an extensive R and D campaign in the search for the future silicon sensor technology baseline to be used in this upgrade. This thesis presents two methods suitable for use in this search: finite element TCAD simulations and test beam measurements. The simulations are focussed on the interstrip capacitance between sensor strips and are compared to measurements before and after the inclusion of radiation damage effects. A geometrical representation of the strip sensors used in the campaign has been found, establishing the predictive power of simulations. The test beam measurements make use of the high-precision pixel telescopes available at the DESY-II test beam facility. The performance of these telescopes has been assessed and their achievable pointing resolution has been found to be below 2 μm. Thin, epitaxial silicon is a candidate material for usage in radiation hard sensors for the future CMS tracking detector. Sample strip sensors of this material have been irradiated to fluences of up to 1.3 x 10 16 n eq /cm 2 with 800 MeV or 23 GeV protons. Test beam measurements with 5 GeV electrons have been performed to investigate the radiation hardness of epitaxial sensors using the pixel beam telescopes. The epitaxial device under test (DUT) has been integrated into the

  11. The Strip Module

    DEFF Research Database (Denmark)

    Pedersen, Tommy

    1996-01-01

    When the behaviour of a ship in waves is to be predicted it is convenient to have a tool which includes different approaches to the problem.The aim of this project is to develop such a tool named the strip theory module. The strip theory module will consist of submodules dependent on the I...

  12. Science Comic Strips

    Science.gov (United States)

    Kim, Dae Hyun; Jang, Hae Gwon; Shin, Dong Sun; Kim, Sun-Ja; Yoo, Chang Young; Chung, Min Suk

    2012-01-01

    Science comic strips entitled Dr. Scifun were planned to promote science jobs and studies among professionals (scientists, graduate and undergraduate students) and children. To this end, the authors collected intriguing science stories as the basis of scenarios, and drew four-cut comic strips, first on paper and subsequently as computer files.…

  13. Anatomy Comic Strips

    Science.gov (United States)

    Park, Jin Seo; Kim, Dae Hyun; Chung, Min Suk

    2011-01-01

    Comics are powerful visual messages that convey immediate visceral meaning in ways that conventional texts often cannot. This article's authors created comic strips to teach anatomy more interestingly and effectively. Four-frame comic strips were conceptualized from a set of anatomy-related humorous stories gathered from the authors' collective…

  14. Research on hardness and tensile properties of A390 alloy with tin addition

    Science.gov (United States)

    Si, Yi

    2018-03-01

    The effect of tin content on hardness and tensile properties of A390 alloys has been discussed. The microstructure of the A390 alloy with tin addition has been surveyed by OM and investigated by SEM. Research showed that β-Sn in the alloy precipitation forms were mainly small blocks and thin strips, particles within the Al2Cu network or large blocks consisting of β-Sn and Al2Cu on Al/Si interfaces or α-Al grain boundaries. Spheroidization of the primary and eutectic silicon was improved due to Sn accretion. With the augment of element tin, hardness of casting alloy is much higher than that of alloy after heat treatment. The elongation and ultimate tensile strength (UTS) were increased in Sn addition from 0 to 1%, which is attributed to the multiple action of Sn.

  15. Prototype Strip Barrel Modules for the ATLAS ITk Strip Detector

    CERN Document Server

    Sawyer, Craig; The ATLAS collaboration

    2017-01-01

    The module design for the Phase II Upgrade of the new ATLAS Inner Tracker (ITk) detector at the LHC employs integrated low mass assembly using single-sided flexible circuits with readout ASICs and a powering circuit incorporating control and monitoring of HV, LV and temperature on the module. Both readout and powering circuits are glued directly onto the silicon sensor surface resulting in a fully integrated, extremely low radiation length module which simultaneously reduces the material requirements of the local support structure by allowing a reduced width stave structure to be employed. Such a module concept has now been fully demonstrated using so-called ABC130 and HCC130 ASICs fabricated in 130nm CMOS technology to readout ATLAS12 n+-in-p silicon strip sensors. Low voltage powering for these demonstrator modules has been realised by utilising a DCDC powerboard based around the CERN FEAST ASIC. This powerboard incorporates an HV multiplexing switch based on a Panasonic GaN transistor. Control and monitori...

  16. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  17. The Honeycomb Strip Chamber

    International Nuclear Information System (INIS)

    Graaf, Harry van der; Buskens, Joop; Rewiersma, Paul; Koenig, Adriaan; Wijnen, Thei

    1991-06-01

    The Honeycomb Strip Chamber (HSC) is a new position sensitive detector. It consists of a stack of folded foils, forming a rigid honeycomb structure. In the centre of each hexagonal cell a wire is strung. Conducting strips on the foils, perpendicular to the wires, pick up the induced avalanche charge. Test results of a prototype show that processing the signals form three adjacent strips nearest to the track gives a spatial resolution better than 64 μm for perpendicular incident tracks. The chamber performance is only slightly affected by a magnetic field. (author). 25 refs.; 21 figs

  18. The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

    International Nuclear Information System (INIS)

    Krammer, M.

    2003-01-01

    Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

  19. Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

    Energy Technology Data Exchange (ETDEWEB)

    Wiik-Fuchs, Liv

    2017-03-09

    The success of particle physics experiments, like those at the Large Hardon Collider (LHC) at CERN, relies on a worldwide interdisciplinary collaboration in a variety of different fields. This thesis contributes to two vital aspects in this area of research:in the first part of a search for heavy trilepton resonances decaying to a Z boson and an electron or muon is presented, while the second part focusses on research and development of radiation tolerant silicon tracking detectors designed for the upgrade of the ATLAS detector for the future luminosity upgrade of the LHC. The search for trilepton resonances is based on pp collision data taken at a centre-of-mass energy of 8 TeV by the ATLAS experiment at the LHC corresponding to an integrated luminosity of 20.3 fb{sup -1}. To reconstruct the narrow resonance, events with at least three leptons (electrons or muons) with a high-transverse momentum are selected. Two of these leptons are required to be consistent with originating from a Z boson decay. Since no significant excess above Standard Model background predictions is observed, 95% confidence level upper limits on the production cross section of trilepton resonances beyond the Standard Model are derived. The results of this analysis are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 113-176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100-474 GeV are excluded. The second part of this thesis focusses on the development of radiation-tolerant silicon strip detectors for the luminosity upgrade of the ATLAS detector envisaged to commence in the year 2016. This thesis includes the results of several studies which contribute to multiple key aspects required for a successful upgrade of the silicon strip detector of the ATLAS Inner Tracker. Among these are the results of a beam test providing the first comparative results between

  20. Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

    International Nuclear Information System (INIS)

    Wiik-Fuchs, Liv

    2017-01-01

    The success of particle physics experiments, like those at the Large Hardon Collider (LHC) at CERN, relies on a worldwide interdisciplinary collaboration in a variety of different fields. This thesis contributes to two vital aspects in this area of research:in the first part of a search for heavy trilepton resonances decaying to a Z boson and an electron or muon is presented, while the second part focusses on research and development of radiation tolerant silicon tracking detectors designed for the upgrade of the ATLAS detector for the future luminosity upgrade of the LHC. The search for trilepton resonances is based on pp collision data taken at a centre-of-mass energy of 8 TeV by the ATLAS experiment at the LHC corresponding to an integrated luminosity of 20.3 fb"-"1. To reconstruct the narrow resonance, events with at least three leptons (electrons or muons) with a high-transverse momentum are selected. Two of these leptons are required to be consistent with originating from a Z boson decay. Since no significant excess above Standard Model background predictions is observed, 95% confidence level upper limits on the production cross section of trilepton resonances beyond the Standard Model are derived. The results of this analysis are interpreted in the context of vector-like lepton and type-III seesaw models. For the vector-like lepton model, most heavy lepton mass values in the range 113-176 GeV are excluded. For the type-III seesaw model, most mass values in the range 100-474 GeV are excluded. The second part of this thesis focusses on the development of radiation-tolerant silicon strip detectors for the luminosity upgrade of the ATLAS detector envisaged to commence in the year 2016. This thesis includes the results of several studies which contribute to multiple key aspects required for a successful upgrade of the silicon strip detector of the ATLAS Inner Tracker. Among these are the results of a beam test providing the first comparative results between

  1. Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask

    Energy Technology Data Exchange (ETDEWEB)

    Virganavičius, D. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Cadarso, V.J.; Kirchner, R. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Stankevičius, L.; Tamulevičius, T.; Tamulevičius, S. [Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Schift, H., E-mail: helmut.schift@psi.ch [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland)

    2016-11-01

    Highlights: • Nanopatterning of thin diamond-like carbon (DLC) films and silver containing DLC composites. • Nanoimprint lithography with thermoplastic silicon containing resist. • Zero-residual layer imprinting and pattern transfer by reactive ion etching. • Robust leaky waveguide sensors with sensitivity up to 319 nm/RIU. - Abstract: Patterning of diamond-like carbon (DLC) and DLC:metal nanocomposites is of interest for an increasing number of applications. We demonstrate a nanoimprint lithography process based on silicon containing thermoplastic resist combined with plasma etching for straightforward patterning of such films. A variety of different structures with few hundred nanometer feature size and moderate aspect ratios were successfully realized. The quality of produced patterns was directly investigated by the means of optical and scanning electron microscopy (SEM). Such structures were further assessed by employing them in the development of gratings for guided mode resonance (GMR) effect. Optical characterization of such leaky waveguide was compared with numerical simulations based on rigorous coupled wave analysis method with good agreement. The use of such structures as refractive index variation sensors is demonstrated with sensitivity up to 319 nm/RIU, achieving an improvement close to 450% in sensitivity compared to previously reported similar sensors. This pronounced GMR signal fully validates the employed DLC material, the technology to pattern it and the possibility to develop DLC based gratings as corrosion and wear resistant refractometry sensors that are able to operate under harsh conditions providing great value and versatility.

  2. Nonlinear optical model for strip plasmonic waveguides

    DEFF Research Database (Denmark)

    Lysenko, Oleg; Bache, Morten; Lavrinenko, Andrei

    2016-01-01

    This paper presents a theoretical model of nonlinear optical properties for strip plasmonic waveguides. The particular waveguides geometry that we investigate contains a gold core, adhesion layers, and silicon dioxide cladding. It is shown that the third-order susceptibility of the gold core...... significantly depends on the layer thickness and has the dominant contribution to the effective third-order susceptibility of the long-range plasmon polariton mode. This results in two nonlinear optical effects in plasmonic waveguides, which we experimentally observed and reported in [Opt. Lett. 41, 317 (2016...... approaches. (C) 2016 Optical Society of America...

  3. micro strip gas chamber

    CERN Multimedia

    1998-01-01

    About 16 000 Micro Strip Gas Chambers like this one will be used in the CMS tracking detector. They will measure the tracks of charged particles to a hundredth of a millimetre precision in the region near the collision point where the density of particles is very high. Each chamber is filled with a gas mixture of argon and dimethyl ether. Charged particles passing through ionise the gas, knocking out electrons which are collected on the aluminium strips visible under the microscope. Such detectors are being used in radiography. They give higher resolution imaging and reduce the required dose of radiation.

  4. Observational study on the pavement performance effects of shoulder rumble strip on shoulders

    Directory of Open Access Journals (Sweden)

    Sean Coffey

    2016-07-01

    Full Text Available Rumble strip implementation has shown a constant increase with its safety benefits. Rumble strips are milled into the roadway shoulder to produce noise and vibrations when driven on. With the milling process, the pavement performance is expected to be negatively impacted by the decreased depth, though not mathematically quantified. Using methods defined by the Long-Term Pavement Performance Program, the severity of the shoulder site’s distresses, with and without shoulder rumble strips, will be quantified. The quantification would permit the design to compensate for the impact. This design compensation allows the implementation of hard shoulder running, the use of shoulder as a travel lane during congestion, and retains the shoulder rumble strip safety instead of removing, as suggested by some proposed projects. While hard shoulder running would not impact specific time periods, the safety benefit of rumble strips could be needed at any time. This study aims to quantify the rumble strip impact to enable the full shoulder strength for hard shoulder running while retaining the safety benefits of rumble strips. Keywords: Rumble strips, Shoulder, Cracking, Pavement performance, Hard shoulder running

  5. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  6. Radiation hardness studies for DEPFETs in Belle II

    International Nuclear Information System (INIS)

    Ritter, Andreas

    2014-01-01

    The study of CP violation requires dedicated detectors and accelerators. At KEK, the High Energy Accelerator Research Organization located in Tsukuba, Japan, an upgrade of the present accelerator KEKB and its detector is in progress. For this new Belle II detector, a new vertex system will be installed, consisting of a silicon strip detector (SVD) and a pixel detector (PXD). The PXD exhibits eight million pixels, each of them made of Depleted p-channel Field Effect Transistors (DEPFETs). During the operation of Belle II various machine- as well as luminosity-related background processes affect the device performance of the DEPFET through radiation damage. As a Metal-Oxide-Semiconductor (MOS) device, the DEPFET is affected by ionizing radiation damage as well as by damages to the silicon bulk itself. The major part of the radiation damage has its origin in the creation of electrons and positrons near the interaction point. Therefore, the hardness factor of electrons of relevant energy was investigated in this work. With this quantity the damage by electrons could be compared to the damage inflicted by neutrons. Neutron irradiations were performed with DEPFETs and related silicon material. The effects of leakage current increase and type inversion were studied. As the electron hardness investigation indicates, the bulk damage done to the DEPFET is small in comparison to the impact on the silicon dioxide layer of the device. Ionizing radiation results in a build-up of oxide charge, thus changing the device characteristics. Especially the threshold voltage of the DEPFET is shifted to more negative values. This shift has to be compensated during the operation of Belle II and is limited by device and system constraints, thus an overall small shift is desired. The changes in the device characteristics were investigated for the two gate electrodes of the DEPFET with respect to their biasing and production related issues. With an additional layer of silicon nitride and a

  7. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  8. Selective chemical stripping

    Science.gov (United States)

    Malavallon, Olivier

    1995-04-01

    At the end of the 80's, some of the large European airlines expressed a wish for paint systems with improved strippability on their aircraft, allowing the possibility to strip down to the primer without altering it, using 'mild' chemical strippers based on methylene chloride. These improvements were initially intended to reduce costs and stripping cycle times while facilitating rapid repainting, and this without the need to change the conventionally used industrial facilities. The level of in-service performance of these paint systems was to be the same as the previous ones. Requirements related to hygiene safety and the environment were added to these initial requirements. To meet customers' expectations, Aerospatiale, within the Airbus Industry GIE, formed a work group. This group was given the task of specifying, following up the elaboration and qualifying the paint systems allowing requirements to be met, in relation with the paint suppliers and the airlines. The analysis made in this report showed the interest of transferring as far upstream as possible (to paint conception level) most of the technical constraints related to stripping. Thus, the concept retained for the paint system, allowing selective chemical stripping, is a 3-coat system with characteristics as near as possible to the previously used paints.

  9. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  10. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  11. Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber. 1.2 This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 7 × 10 −6 to 3 × 10−2 C kg −1 s−1 (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is >100 R/s, see Appendix X1. Note 1—See Terminology E170 for definition of exposure and its units. 1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information onl...

  12. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    International Nuclear Information System (INIS)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-01-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20–25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities ( Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  13. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    Science.gov (United States)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-09-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  14. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Tkaczyk, S.; Carter, H.; Flaugher, B.

    1993-01-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

  15. Micro-discharge noise and radiation damage of silicon microstrip sensors

    International Nuclear Information System (INIS)

    Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

    1996-01-01

    We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

  16. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  17. Photosensitive Strip RETHGEM

    CERN Document Server

    Peskov, Vladimir; Nappi, E.; Oliveira, R.; Paic, G.; Pietropaolo, F.; Picchi, P.

    2008-01-01

    An innovative photosensitive gaseous detector, consisting of a GEM like amplification structure with double layered electrodes (instead of commonly used metallic ones) coated with a CsI reflective photocathode, is described. In one of our latest designs, the inner electrode consists of a metallic grid and the outer one is made of resistive strips; the latter are manufactured by a screen printing technology on the top of the metallic strips grid The inner metallic grid is used for 2D position measurements whereas the resistive layer provides an efficient spark protected operation at high gains - close to the breakdown limit. Detectors with active areas of 10cm x10cm and 10cm x20cm were tested under various conditions including the operation in photosensitive gas mixtures containing ethylferrocene or TMAE vapors. The new technique could have many applications requiring robust and reliable large area detectors for UV visualization, as for example, in Cherenkov imaging devices.

  18. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  19. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  20. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    Energy Technology Data Exchange (ETDEWEB)

    Loechner, S.

    2006-07-26

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  1. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    International Nuclear Information System (INIS)

    Loechner, S.

    2006-01-01

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  2. Performance studies of the CMS Strip Tracker before installation

    CERN Document Server

    Adam, Wolfgang; Dragicevic, Marko; Friedl, Markus; Fruhwirth, R; Hansel, S; Hrubec, Josef; Krammer, Manfred; Oberegger, Margit; Pernicka, Manfred; Schmid, Siegfried; Stark, Roland; Steininger, Helmut; Uhl, Dieter; Waltenberger, Wolfgang; Widl, Edmund; Van Mechelen, Pierre; Cardaci, Marco; Beaumont, Willem; de Langhe, Eric; de Wolf, Eddi A; Delmeire, Evelyne; Hashemi, Majid; Bouhali, Othmane; Charaf, Otman; Clerbaux, Barbara; Dewulf, Jean-Paul; Elgammal, Sherif; Hammad, Gregory Habib; de Lentdecker, Gilles; Marage, Pierre Edouard; Vander Velde, Catherine; Vanlaer, Pascal; Wickens, John; Adler, Volker; Devroede, Olivier; De Weirdt, Stijn; D'Hondt, Jorgen; Goorens, Robert; Heyninck, Jan; Maes, Joris; Mozer, Matthias Ulrich; Tavernier, Stefaan; Van Lancker, Luc; Van Mulders, Petra; Villella, Ilaria; Wastiels, C; Bonnet, Jean-Luc; Bruno, Giacomo; De Callatay, Bernard; Florins, Benoit; Giammanco, Andrea; Gregoire, Ghislain; Keutgen, Thomas; Kcira, Dorian; Lemaitre, Vincent; Michotte, Daniel; Militaru, Otilia; Piotrzkowski, Krzysztof; Quertermont, L; Roberfroid, Vincent; Rouby, Xavier; Teyssier, Daniel; Daubie, Evelyne; Anttila, Erkki; Czellar, Sandor; Engstrom, Pauli; Harkonen, J; Karimaki, V; Kostesmaa, J; Kuronen, Auli; Lampen, Tapio; Linden, Tomas; Luukka, Panja-Riina; Maenpaa, T; Michal, Sebastien; Tuominen, Eija; Tuominiemi, Jorma; Ageron, Michel; Baulieu, Guillaume; Bonnevaux, Alain; Boudoul, Gaelle; Chabanat, Eric; Chabert, Eric Christian; Chierici, Roberto; Contardo, Didier; Della Negra, Rodolphe; Dupasquier, Thierry; Gelin, Georges; Giraud, Noël; Guillot, Gérard; Estre, Nicolas; Haroutunian, Roger; Lumb, Nicholas; Perries, Stephane; Schirra, Florent; Trocme, Benjamin; Vanzetto, Sylvain; Agram, Jean-Laurent; Blaes, Reiner; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Fontaine, Jean-Charles; Berst, Jean-Daniel; Brom, Jean-Marie; Didierjean, Francois; Goerlach, Ulrich; Graehling, Philippe; Gross, Laurent; Hosselet, J; Juillot, Pierre; Lounis, Abdenour; Maazouzi, Chaker; Olivetto, Christian; Strub, Roger; Van Hove, Pierre; Anagnostou, Georgios; Brauer, Richard; Esser, Hans; Feld, Lutz; Karpinski, Waclaw; Klein, Katja; Kukulies, Christoph; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pierschel, Gerhard; Raupach, Frank; Schael, Stefan; Schwering, Georg; Sprenger, Daniel; Thomas, Maarten; Weber, Markus; Wittmer, Bruno; Wlochal, Michael; Beissel, Franz; Bock, E; Flugge, G; Gillissen, C; Hermanns, Thomas; Heydhausen, Dirk; Jahn, Dieter; Kaussen, Gordon; Linn, Alexander; Perchalla, Lars; Poettgens, Michael; Pooth, Oliver; Stahl, Achim; Zoeller, Marc Henning; Buhmann, Peter; Butz, Erik; Flucke, Gero; Hamdorf, Richard Helmut; Hauk, Johannes; Klanner, Robert; Pein, Uwe; Schleper, Peter; Steinbruck, G; Blum, P; De Boer, Wim; Dierlamm, Alexander; Dirkes, Guido; Fahrer, Manuel; Frey, Martin; Furgeri, Alexander; Hartmann, Frank; Heier, Stefan; Hoffmann, Karl-Heinz; Kaminski, Jochen; Ledermann, Bernhard; Liamsuwan, Thiansin; Muller, S; Muller, Th; Schilling, Frank-Peter; Simonis, Hans-Jürgen; Steck, Pia; Zhukov, Valery; Cariola, P; De Robertis, Giuseppe; Ferorelli, Raffaele; Fiore, Luigi; Preda, M; Sala, Giuliano; Silvestris, Lucia; Tempesta, Paolo; Zito, Giuseppe; Creanza, Donato; De Filippis, Nicola; De Palma, Mauro; Giordano, Domenico; Maggi, Giorgio; Manna, Norman; My, Salvatore; Selvaggi, Giovanna; Albergo, Sebastiano; Chiorboli, Massimiliano; Costa, Salvatore; Galanti, Mario; Giudice, Nunzio; Guardone, Nunzio; Noto, Francesco; Potenza, Renato; Saizu, Mirela Angela; Sparti, V; Sutera, Concetta; Tricomi, Alessia; Tuve, Cristina; Brianzi, Mirko; Civinini, Carlo; Maletta, Fernando; Manolescu, Florentina; Meschini, Marco; Paoletti, Simone; Sguazzoni, Giacomo; Broccolo, B; Ciulli, Vitaliano; D'Alessandro, Raffaello; Focardi, Ettore; Frosali, Simone; Genta, Chiara; Landi, Gregorio; Lenzi, Piergiulio; Macchiolo, Anna; Magini, Nicolo; Parrini, Giuliano; Scarlini, Enrico; Cerati, Giuseppe Benedetto; Azzi, Patrizia; Bacchetta, Nicola; Candelori, Andrea; Dorigo, Tommaso; Kaminsky, A; Karaevski, S; Khomenkov, Volodymyr; Reznikov, Sergey; Tessaro, Mario; Bisello, Dario; De Mattia, Marco; Giubilato, Piero; Loreti, Maurizio; Mattiazzo, Serena; Nigro, Massimo; Paccagnella, Alessandro; Pantano, Devis; Pozzobon, Nicola; Tosi, Mia; Bilei, Gian Mario; Checcucci, Bruno; Fano, Livio; Servoli, Leonello; Ambroglini, Filippo; Babucci, Ezio; Benedetti, Daniele; Biasini, Maurizio; Caponeri, Benedetta; Covarelli, Roberto; Giorgi, Marco; Lariccia, Paolo; Mantovani, Giancarlo; Marcantonini, Marta; Postolache, Vasile; Santocchia, Attilio; Spiga, Daniele; Bagliesi, Giuseppe; Balestri, Gabriele; Berretta, Luca; Bianucci, S; Boccali, Tommaso; Bosi, Filippo; Bracci, Fabrizio; Castaldi, Rino; Ceccanti, Marco; Cecchi, Roberto; Cerri, Claudio; Cucoanes, Andi Sebastian; Dell'Orso, Roberto; Dobur, Didar; Dutta, Suchandra; Giassi, Alessandro; Giusti, Simone; Kartashov, Dmitry; Kraan, Aafke; Lomtadze, Teimuraz; Lungu, George-Adrian; Magazzu, Guido; Mammini, Paolo; Mariani, Filippo; Martinelli, Giovanni; Moggi, Andrea; Palla, Fabrizio; Palmonari, Francesco; Petragnani, Giulio; Profeti, Alessandro; Raffaelli, Fabrizio; Rizzi, Domenico; Sanguinetti, Giulio; Sarkar, Subir; Sentenac, Daniel; Serban, Alin Titus; Slav, Adrian; Soldani, A; Spagnolo, Paolo; Tenchini, Roberto; Tolaini, Sergio; Venturi, Andrea; Verdini, Piero Giorgio; Vos, Marcel; Zaccarelli, Luciano; Avanzini, Carlo; Basti, Andrea; Benucci, Leonardo; Bocci, Andrea; Cazzola, Ugo; Fiori, Francesco; Linari, Stefano; Massa, Maurizio; Messineo, Alberto; Segneri, Gabriele; Tonelli, Guido; Azzurri, Paolo; Bernardini, Jacopo; Borrello, Laura; Calzolari, Federico; Foa, Lorenzo; Gennai, Simone; Ligabue, Franco; Petrucciani, Giovanni; Rizzi, Andrea; Yang, Zong-Chang; Benotto, Franco; Demaria, Natale; Dumitrache, Floarea; Farano, R; Borgia, Maria Assunta; Castello, Roberto; Costa, Marco; Migliore, Ernesto; Romero, Alessandra; Abbaneo, Duccio; Abbas, M; Ahmed, Ijaz; Akhtar, I; Albert, Eric; Bloch, Christoph; Breuker, Horst; Butt, Shahid Aleem; Buchmuller, Oliver; Cattai, Ariella; Delaere, Christophe; Delattre, Michel; Edera, Laura Maria; Engstrom, Pauli; Eppard, Michael; Gateau, Maryline; Gill, Karl; Giolo-Nicollerat, Anne-Sylvie; Grabit, Robert; Honma, Alan; Huhtinen, Mika; Kloukinas, Kostas; Kortesmaa, Jarmo; Kottelat, Luc-Joseph; Kuronen, Auli; Leonardo, Nuno; Ljuslin, Christer; Mannelli, Marcello; Masetti, Lorenzo; Marchioro, Alessandro; Mersi, Stefano; Michal, Sebastien; Mirabito, Laurent; Muffat-Joly, Jeannine; Onnela, Antti; Paillard, Christian; Pal, Imre; Pernot, Jean-Francois; Petagna, Paolo; Petit, Patrick; Piccut, C; Pioppi, Michele; Postema, Hans; Ranieri, Riccardo; Ricci, Daniel; Rolandi, Gigi; Ronga, Frederic Jean; Sigaud, Christophe; Syed, A; Siegrist, Patrice; Tropea, Paola; Troska, Jan; Tsirou, Andromachi; Vander Donckt, Muriel; Vasey, François; Alagoz, Enver; Amsler, Claude; Chiochia, Vincenzo; Regenfus, Christian; Robmann, Peter; Rochet, Jacky; Rommerskirchen, Tanja; Schmidt, Alexander; Steiner, Stefan; Wilke, Lotte; Church, Ivan; Cole, Joanne; Coughlan, John A; Gay, Arnaud; Taghavi, S; Tomalin, Ian R; Bainbridge, Robert; Cripps, Nicholas; Fulcher, Jonathan; Hall, Geoffrey; Noy, Matthew; Pesaresi, Mark; Radicci, Valeria; Raymond, David Mark; Sharp, Peter; Stoye, Markus; Wingham, Matthew; Zorba, Osman; Goitom, Israel; Hobson, Peter R; Reid, Ivan; Teodorescu, Liliana; Hanson, Gail; Jeng, Geng-Yuan; Liu, Haidong; Pasztor, Gabriella; Satpathy, Asish; Stringer, Robert; Mangano, Boris; Affolder, K; Affolder, T; Allen, Andrea; Barge, Derek; Burke, Samuel; Callahan, D; Campagnari, Claudio; Crook, A; D'Alfonso, Mariarosaria; Dietch, J; Garberson, Jeffrey; Hale, David; Incandela, H; Incandela, Joe; Jaditz, Stephen; Kalavase, Puneeth; Kreyer, Steven Lawrence; Kyre, Susanne; Lamb, James; Mc Guinness, C; Mills, C; Nguyen, Harold; Nikolic, Milan; Lowette, Steven; Rebassoo, Finn; Ribnik, Jacob; Richman, Jeffrey; Rubinstein, Noah; Sanhueza, S; Shah, Yousaf Syed; Simms, L; Staszak, D; Stoner, J; Stuart, David; Swain, Sanjay Kumar; Vlimant, Jean-Roch; White, Dean; Ulmer, Keith; Wagner, Stephen Robert; Bagby, Linda; Bhat, Pushpalatha C; Burkett, Kevin; Cihangir, Selcuk; Gutsche, Oliver; Jensen, Hans; Johnson, Mark; Luzhetskiy, Nikolay; Mason, David; Miao, Ting; Moccia, Stefano; Noeding, Carsten; Ronzhin, Anatoly; Skup, Ewa; Spalding, William J; Spiegel, Leonard; Tkaczyk, Slawek; Yumiceva, Francisco; Zatserklyaniy, Andriy; Zerev, E; Anghel, Ioana Maria; Bazterra, Victor Eduardo; Gerber, Cecilia Elena; Khalatian, S; Shabalina, Elizaveta; Baringer, Philip; Bean, Alice; Chen, Jie; Hinchey, Carl Louis; Martin, Christophe; Moulik, Tania; Robinson, Richard; Gritsan, Andrei; Lae, Chung Khim; Tran, Nhan Viet; Everaerts, Pieter; Hahn, Kristan Allan; Harris, Philip; Nahn, Steve; Rudolph, Matthew; Sung, Kevin; Betchart, Burton; Demina, Regina; Gotra, Yury; Korjenevski, Sergey; Miner, Daniel Carl; Orbaker, Douglas; Christofek, Leonard; Hooper, Ryan; Landsberg, Greg; Nguyen, Duong; Narain, Meenakshi; Speer, Thomas; Tsang, Ka Vang

    2009-01-01

    In March 2007 the assembly of the Silicon Strip Tracker was completed at the Tracker Integration Facility at CERN. Nearly 15% of the detector was instrumented using cables, fiber optics, power supplies, and electronics intended for the operation at the LHC. A local chiller was used to circulate the coolant for low temperature operation. In order to understand the efficiency and alignment of the strip tracker modules, a cosmic ray trigger was implemented. From March through July 4.5 million triggers were recorded. This period, referred to as the Sector Test, provided practical experience with the operation of the Tracker, especially safety, data acquisition, power, and cooling systems. This paper describes the performance of the strip system during the Sector Test, which consisted of five distinct periods defined by the coolant temperature. Significant emphasis is placed on comparisons between the data and results from Monte Carlo studies.

  3. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  4. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  5. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  6. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  7. Strip detectors read-out system user's guide

    International Nuclear Information System (INIS)

    Claus, G.; Dulinski, W.; Lounis, A.

    1996-01-01

    The Strip Detector Read-out System consists of two VME modules: SDR-Flash and SDR-seq completed by a fast logic SDR-Trig stand alone card. The system is a self-consistent, cost effective and easy use solution for the read-out of analog multiplexed signals coming from some of the front-end electronics chips (Viking/VA chips family, Premus 128 etc...) currently used together with solid (silicon) or gas microstrip detectors. (author)

  8. Dynamic Underground Stripping Project

    International Nuclear Information System (INIS)

    Aines, R.; Newmark, R.; McConachie, W.; Udell, K.; Rice, D.; Ramirez, A.; Siegel, W.; Buettner, M.; Daily, W.; Krauter, P.; Folsom, E.; Boegel, A.J.; Bishop, D.; Udell, K.

    1992-01-01

    LLNL is collaborating with the UC Berkeley College of Engineering to develop and demonstrate a system of thermal remediation and underground imaging techniques for use in rapid cleanup of localized underground spills. Called ''Dynamic Stripping'' to reflect the rapid and controllable nature of the process, it will combine steam injection, direct electrical heating, and tomographic geophysical imaging in a cleanup of the LLNL gasoline spill. In the first 8 months of the project, a Clean Site engineering test was conducted to prove the field application of the techniques before moving the contaminated site in FY 92

  9. Strip casting apparatus and method

    Science.gov (United States)

    Williams, R.S.; Baker, D.F.

    1988-09-20

    Strip casting apparatus including a molten-metal-holding container and a nozzle to deposit molten metal onto a moving chill drum to directly cast continuous metallic strip. The nozzle body includes a slot bounded between a back and a front lip. The slot width exceeds about 20 times the gap distance between the nozzle and the chill drum surface. Preferably, the slot width exceeds 0.5 inch. This method of strip casting minimizes pressure drop, insuring better metal-to-chill-drum contact which promotes heat transfer and results in a better quality metallic strip. 6 figs.

  10. Wedge silicon detectors for the inner trackering system of CMS

    International Nuclear Information System (INIS)

    Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

    1997-01-01

    One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

  11. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  12. Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

    CERN Document Server

    Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

    2004-01-01

    Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

  13. Experimental Correlation Between Silicon Carbide And Hardness ...

    African Journals Online (AJOL)

    Fe/SiC particulate composites have been investigated. 5-25% SiC additions were used for the production of different grades of Al-Si-Fe/SiC particulate composites. The composites samples were solution heat-treated at 500oC for 3hours and ...

  14. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Science.gov (United States)

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  15. High Pressure Water Stripping Using Multi-Orifice Nozzles

    Science.gov (United States)

    Hoppe, David

    1999-01-01

    while leaving the coating untouched in adjacent sections. The high pressure water stripping system can be set to extremely aggressive conditions allowing stripping of hard to remove adhesives, paint systems, and even cladding and chromate conversion coatings. The energy force can also be reduced to strip coatings from thin aluminum substrates without causing any damage or deterioration to the substrate's surface. High pressure water stripping of aerospace components has thus proven to be an efficient and cost effective method for cleaning and removing coatings.

  16. Design of the first full size ATLAS ITk Strip sensor for the endcap region

    CERN Document Server

    Lacasta, Carlos; The ATLAS collaboration

    2017-01-01

    The ATLAS collaboration is designing the full silicon tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 µm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 µm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in or...

  17. Design of the first full size ATLAS ITk Strip sensor for the endcap region

    CERN Document Server

    Lacasta, Carlos; The ATLAS collaboration

    2018-01-01

    The ATLAS collaboration is designing the full silicon tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 μm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 μm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in or...

  18. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. Monitoring the CMS strip tracker readout system

    International Nuclear Information System (INIS)

    Mersi, S; Bainbridge, R; Cripps, N; Fulcher, J; Wingham, M; Baulieu, G; Bel, S; Delaere, C; Drouhin, F; Mirabito, L; Cole, J; Giassi, A; Gross, L; Hahn, K; Nikolic, M; Tkaczyk, S

    2008-01-01

    The CMS Silicon Strip Tracker at the LHC comprises a sensitive area of approximately 200 m 2 and 10 million readout channels. Its data acquisition system is based around a custom analogue front-end chip. Both the control and the readout of the front-end electronics are performed by off-detector VME boards in the counting room, which digitise the raw event data and perform zero-suppression and formatting. The data acquisition system uses the CMS online software framework to configure, control and monitor the hardware components and steer the data acquisition. The first data analysis is performed online within the official CMS reconstruction framework, which provides many services, such as distributed analysis, access to geometry and conditions data, and a Data Quality Monitoring tool based on the online physics reconstruction. The data acquisition monitoring of the Strip Tracker uses both the data acquisition and the reconstruction software frameworks in order to provide real-time feedback to shifters on the operational state of the detector, archiving for later analysis and possibly trigger automatic recovery actions in case of errors. Here we review the proposed architecture of the monitoring system and we describe its software components, which are already in place, the various monitoring streams available, and our experiences of operating and monitoring a large-scale system

  20. Standard hardness conversion tables for metals relationship among brinell hardness, vickers hardness, rockwell hardness, superficial hardness, knoop hardness, and scleroscope hardness

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2007-01-01

    1.1 Conversion Table 1 presents data in the Rockwell C hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.2 Conversion Table 2 presents data in the Rockwell B hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.3 Conversion Table 3 presents data on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, and Knoop hardness of nickel and high-nickel alloys (nickel content o...

  1. Hard coatings

    International Nuclear Information System (INIS)

    Dan, J.P.; Boving, H.J.; Hintermann, H.E.

    1993-01-01

    Hard, wear resistant and low friction coatings are presently produced on a world-wide basis, by different processes such as electrochemical or electroless methods, spray technologies, thermochemical, CVD and PVD. Some of the most advanced processes, especially those dedicated to thin film depositions, basically belong to CVD or PVD technologies, and will be looked at in more detail. The hard coatings mainly consist of oxides, nitrides, carbides, borides or carbon. Over the years, many processes have been developed which are variations and/or combinations of the basic CVD and PVD methods. The main difference between these two families of deposition techniques is that the CVD is an elevated temperature process (≥ 700 C), while the PVD on the contrary, is rather a low temperature process (≤ 500 C); this of course influences the choice of substrates and properties of the coating/substrate systems. Fundamental aspects of the vapor phase deposition techniques and some of their influences on coating properties will be discussed, as well as the very important interactions between deposit and substrate: diffusions, internal stress, etc. Advantages and limitations of CVD and PVD respectively will briefly be reviewed and examples of applications of the layers will be given. Parallel to the development and permanent updating of surface modification technologies, an effort was made to create novel characterisation methods. A close look will be given to the coating adherence control by means of the scratch test, at the coating hardness measurement by means of nanoindentation, at the coating wear resistance by means of a pin-on-disc tribometer, and at the surface quality evaluation by Atomic Force Microscopy (AFM). Finally, main important trends will be highlighted. (orig.)

  2. The LHCb Silicon Tracker, first operational results

    CERN Document Server

    Esperante, D; Adeva, B; Gallas, A; Pérez Trigo, E; Rodríguez Pérez, P; Pazos Álvarez, A; Saborido, J; Vàzquez, P; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; de Cian, M; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Iakovenko, V; Okhrimenko, O; Pugatch, V

    2010-01-01

    The Large Hadron Collider beauty (LHCb) experiment at CERN (Conseil Européen pour la Recherche Nucléaire) is designed to perform precision measurements of b quark decays. The LHCb Silicon Tracker consists of two sub-detectors, the Tracker Turicensis and the Inner Tracker, which are built from silicon micro-strip technology. First performance results of both detectors using data from Large Hadron Collider synchronization tests are presented.

  3. The BaBar silicon vertex tracker

    International Nuclear Information System (INIS)

    Bozzi, C.; Carassiti, V.; Ramusino, A. Cotta; Dittongo, S.; Folegani, M.; Piemontese, L.; Abbott, B.K.; Breon, A.B.; Clark, A.R.; Dow, S.; Fan, Q.; Goozen, F.; Hernikl, C.; Karcher, A.; Kerth, L.T.; Kipnis, I.; Kluth, S.; Lynch, G.; Levi, M.; Luft, P.; Luo, L.; Nyman, M.; Pedrali-Noy, M.; Roe, N.A.; Zizka, G.; Roberts, D.; Barni, D.; Brenna, E.; Defendi, I.; Forti, A.; Giugni, D.; Lanni, F.; Palombo, F.; Vaniev, V.; Leona, A.; Mandelli, E.; Manfredi, P.F.; Perazzo, A.; Re, V.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Calderini, G.; Carpinelli, M.; Dutra, F.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Paoloni, E.; Profeti, A.; Rama, M.; Rampino, G.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Tritto, S.; Vitale, R.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.; Roat, C.; Bona, M.; Bianchi, F.; Daudo, F.; Girolamo, B. Di; Gamba, D.; Giraudo, G.; Grosso, P.; Romero, A.; Smol, A.; Trapani, P.; Zanin, D.; Bosisio, L.; Ricca, G. Della; Lanceri, L.; Pompili, A.; Poropat, P.; Prest, M.; Rastelli, C.; Vallazza, E.; Vuagnin, G.; Hast, C.; Potter, E.P.; Sharma, V.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Eppich, A.; Hale, D.; Hall, K.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.; Grothe, M.; Johnson, R.; Kroeger, W.; Lockman, W.; Pulliam, T.; Rowe, W.; Schmitz, R.; Seiden, A.; Spencer, E.; Turri, M.; Wilder, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Walsh, J.; Zobernig, H.

    2000-01-01

    The BaBar Silicon Vertex Tracker (SVT) is designed to provide the high-precision vertexing necessary for making measurements of CP violation at the SLAC B-Factory PEP-II. The instrument consists of five layers of double-sided silicon strip detectors and has been installed in the BaBar experiment and taking colliding beam data since May 1999. An overview of the design as well as performance and experience from the initial running will be presented

  4. Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

    CERN Document Server

    Steinbrueck, Georg

    2012-01-01

    Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

  5. Characterization of galvannealed strip

    International Nuclear Information System (INIS)

    Moreas, G.; Hardy, Y.

    1999-01-01

    With the aim of enhancing coating quality control during galvannealing process, an online microscopic image acquisition sensor has been developed at CRM. In galvannealing process, the ζ phase surface density is a coating quality characteristic, and the on-line microscope, equipped with optics placed at 20 mm from the surface, grabs 250 μm x 190 μm images on which ζ crystals (approximate dimensions: 1 μm x 10 μm) can be clearly identified. On-line, the sensor is mounted in front of a roll where the strip has a stable position. The coating surface to sensor optics distance is continuously measured by an accurate triangulation sensor (1 μm repeatability) and is adjusted in such a way that, due to roll eccentricity, the image is focused at least twice per revolution. When focused, image of moving product is frozen by a short (10 ns) laser light pulse and is grabbed. The obtained image is then processed to extract ζ phase percentage and allows adjustment of process parameters to reach the desired coating characteristics. (author)

  6. Assembly and validation of the SSD silicon microstrip detector of ALICE

    NARCIS (Netherlands)

    de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

    2006-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

  7. Simulation studies for the ATLAS upgrade Strip tracker

    CERN Document Server

    Wang, Jike; The ATLAS collaboration

    2017-01-01

    ATLAS is making extensive efforts towards preparing a detector upgrade for the High luminosity operations of the LHC (HL-LHC), which will commence operation in ~10 years. The current ATLAS Inner Detector will be replaced by a all-silicon tracker (comprising an inner Pixel tracker and outer Strip tracker). The software currently used for the new silicon tracker is broadly inherited from that used for the LHC Run 1 and 2, but many new developments have been made to better fulfil the future detector and operation requirements. One aspect in particular which will be highlighted is the simulation software for the Strip tracker. The available geometry description software (including the detailed description for all the sensitive elements, the services, etc.) did not allow for accurate modeling of the planned detector design. A range of sensors/layouts for the Strip tracker are being considered and must be studied in detailed simulations in order to assess the performance and ascertain that requirements are met. For...

  8. Buffers and vegetative filter strips

    Science.gov (United States)

    Matthew J. Helmers; Thomas M. Isenhart; Michael G. Dosskey; Seth M. Dabney

    2008-01-01

    This chapter describes the use of buffers and vegetative filter strips relative to water quality. In particular, we primarily discuss the herbaceous components of the following NRCS Conservation Practice Standards.

  9. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    International Nuclear Information System (INIS)

    Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  10. Qualification of a new supplier for silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@cern.ch [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Frühwirth, E. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J.; Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2013-12-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors are capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European semiconductor manufacturer Infineon Technologies Austria AG the Institute of High Energy Physics of the Austrian Academy of Sciences developed planar silicon strip sensors in p-on-n technology. This paper presents the development, production and results from the electrical characterisation of the first sensors produced by Infineon.

  11. Magnetic stripping studies for SPL

    CERN Document Server

    Posocco, P; CERN. Geneva. BE Department

    2010-01-01

    Magnetic stripping of H- can seriously enhance the beam losses along the SPL machine. These losses depend on the beam energy, on the beam transverse distribution and on the intensity of the magnetic field. For radioprotection issues the losses must be limited to 1 W/m. In this paper we will concentrate on the stripping phenomena inside the quadrupole magnets with the aim of defining the quadrupole range for the design phase of SPL.

  12. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  13. Microstructural and tribological investigations of CrN coated, wet-stripped and recoated functional substrates used for cutting and forming tools

    International Nuclear Information System (INIS)

    Rebole, R.; Martinez, A.; Rodriguez, R.; Fuentes, G.G.; Spain, E.; Watson, N.; Avelar-Batista, J.C.; Housden, J.; Montala, F.; Carreras, L.J.; Tate, T.J.

    2004-01-01

    Recent breakthroughs in wet-stripping Physical Vapour Deposited (PVD) CrN coatings on standard high speed and stainless steels and on hard metal substrates are reported in this work. Validation of the stripping process was evaluated in terms of substrate damage after exposure to the chemical agents and also in terms of the tribological properties of the PVD CrN layers before (Pristine) and after stripping and re-coating (Recoated). The investigation was focussed on the influence of the stripping processes on the hardness, roughness, adherence and wear resistance of the Recoated CrN coatings deposited by electron beam PVD (e-beam) after stripping. Analysis of the chemically stripped and Recoated steel substrates showed that: (a) hardness and elastic modulus of the Recoated e-beam CrN did not change significantly compared to Pristine e-beam CrN, and (b) surface roughness of the Recoated e-beam CrN layers was greater by a factor of 50-60% than the initial. For hard-metal substrates, the surface damage and its effect on the re-deposited coating performance in terms of the chemical reactions during the stripping process were discussed. It was observed that wet-stripping in a basic solution led to depletion of tungsten and carbon at the surface of the stripped WC-Co specimens

  14. Modules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade

    CERN Document Server

    Garcia-Argos, Carlos; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2024. The existing Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four layer barrel and a forward region composed of six discs on each side of the barrel. The basic unit of the detector is the silicon-strip module, consisting of a sensor and one or more hybrid circuits that hold the read-out electronics. The geometries of the barrel and end-cap modules take into account the regions that they have to cover. In the central region, the detectors are rectangular with straight strips, whereas on the forward region the modules require wedge shaped sensors with varying strip length and pitch. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which kicks-off the pre-production readiness phase at the involved institutes. ...

  15. Modules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade

    CERN Document Server

    Garcia-Argos, Carlos; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2024. The existing Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four layer barrel and a forward region composed of six discs on each side of the barrel. The basic unit of the detector is the silicon-strip module, consisting of a sensor and one or more hybrid circuits that hold the read-out electronics. The geometries of the barrel and end-cap modules take into account the regions that they have to cover. In the central region, the detectors are rectangular with straight strips, whereas in the forward region the modules require wedge shaped sensors with varying strip length and pitch. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which kicks-off the pre-production readiness phase at the involved institutes. ...

  16. Results on a 10 micron pitch detector with individual strip readout

    International Nuclear Information System (INIS)

    Antinori, F.; Dameri, M.; Olcese, A.; Osculati, B.; Rossi, L.; Forino, A.; Marioli, D.; Meroni, C.; Redaelli, N.; Torretta, D.

    1990-01-01

    A 10 μm pitch silicon microstrip detector with individual strip readout via hybrid electronics has been produced and operated. Connections to digital and analog electronics is realized through an insensitive fan-out structure on the detector itself. The detector has been used in the WA82 experiment at the CERN Ω' spectrometer. (orig.)

  17. Development of readout electronics for monolithic integration with diode strip detectors

    International Nuclear Information System (INIS)

    Hosticka, B.J.; Wrede, M.; Zimmer, G.; Kemmer, J.; Hofmann, R.; Lutz, G.

    1984-03-01

    Parallel in - serial out analog readout electronics integrated with silicon strip detectors will bring a reduction of two orders of magnitude in external electronics. The readout concept and the chosen CMOS technology solve the basic problem of low noise and low power requirements. A hybrid solution is an intermediate step towards the final goal of monolithic integration of detector and electronics. (orig.)

  18. Characterization of 3D-DDTC strip sensors with passing-through columns

    Energy Technology Data Exchange (ETDEWEB)

    Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38123 Povo di Trento (Italy); Betancourt, C. [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38123 Povo di Trento (Italy); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Lecini, B. [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); Kuehn, S.; Parzefall, U. [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy)

    2013-12-01

    We report on the pre-irradiation electrical and functional characterization of newly developed 3D silicon strip detectors fabricated at FBK. Critical layout aspects present in the previous version of the technology were solved, and the new sensors are showing encouraging results both in terms of electrical properties and charge collection efficiency.

  19. An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1994-01-01

    Since 1989 the Solenoidal Detector Collaboration (SDC) has been developing a general purpose detector to be operated at the Superconducting Super Collider (SSC). A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDS silicon tracker. The IC was designed and tested at LBL and was fabricated using AT and T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a φ = 10 14 protons/cm 2 have been performed on the JC, demonstrating the radiation hardness of the complementary bipolar process

  20. Upgrade of the ATLAS Silicon Tracker for the sLHC

    CERN Document Server

    Minano, M; The ATLAS collaboration

    2009-01-01

    While the CERN Large Hadron Collider (LHC) will start taking data this year, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2016 by about an order of magnitude, with the upgraded muchine dubbed Super-LHC or SLHC. As radiation damage scales with integrated luminosity, the particle physics experiments at the SLHC will need to be equipped with a new generation of radiation-hard detectors. This is of particular importance for the semiconductor tracking detectors located close to the LHC interaction region, where the higest radiation doses occur. The ATLAS experiment will require a new particle tracking system for SLHC operation. In order to cope with the increase in background events by about one order of magnitude at the higher luminosity, an all silicon detector with enhanced radiation hardness is being designed. The new silicon strip detector will use significantly shorter stri...

  1. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  2. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  3. Extremely small polarization beam splitter based on a multimode interference coupler with a silicon hybrid plasmonic waveguide.

    Science.gov (United States)

    Guan, Xiaowei; Wu, Hao; Shi, Yaocheng; Dai, Daoxin

    2014-01-15

    A novel polarization beam splitter (PBS) with an extremely small footprint is proposed based on a multimode interference (MMI) coupler with a silicon hybrid plasmonic waveguide. The MMI section, covered with a metal strip partially, is designed to achieve mirror imaging for TE polarization. On the other hand, for TM polarization, there is almost no MMI effect since the higher-order TM modes are hardly excited due to the hybrid plasmonic effect. With this design, the whole PBS including the 1.1 μm long MMI section as well as the output section has a footprint as small as ∼1.8 μm×2.5 μm. Besides, the fabrication process is simple since the waveguide dimension is relatively large (e.g., the input/output waveguides widths w ≥300 nm and the MMI width w(MMI)=800 nm). Numerical simulations show that the designed PBS has a broad band of ∼80 nm for an ER >10 dB as well as a large fabrication tolerance to allow a silicon core width variation of -30 nm<Δw<50 nm and a metal strip width variation of -200 nm<Δw(m)<0.

  4. The CMS all silicon Tracker simulation

    CERN Document Server

    Biasini, Maurizio

    2009-01-01

    The Compact Muon Solenoid (CMS) tracker detector is the world's largest silicon detector with about 201 m$^2$ of silicon strips detectors and 1 m$^2$ of silicon pixel detectors. It contains 66 millions pixels and 10 million individual sensing strips. The quality of the physics analysis is highly correlated with the precision of the Tracker detector simulation which is written on top of the GEANT4 and the CMS object-oriented framework. The hit position resolution in the Tracker detector depends on the ability to correctly model the CMS tracker geometry, the signal digitization and Lorentz drift, the calibration and inefficiency. In order to ensure high performance in track and vertex reconstruction, an accurate knowledge of the material budget is therefore necessary since the passive materials, involved in the readout, cooling or power systems, will create unwanted effects during the particle detection, such as multiple scattering, electron bremsstrahlung and photon conversion. In this paper, we present the CM...

  5. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  6. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  7. Magnetic ring for stripping enhancement

    International Nuclear Information System (INIS)

    Selph, F.

    1992-10-01

    A ring designed to recycle ions through a stripping medium offers the possibility for increasing output of the desired charge state by up to 4x. This could be a very important component of a Radioactive Nuclear Beam Facility. In order for such a ring to work effectively it must satisfy certain design conditions. These include achromaticity at the stripper, a dispersed region for an extraction magnet, and a number of first and higher order optics constraints which are necessary to insure that the beam emittance is not degraded unduly by the ring. An example is given of a candidate design of a stripping ring

  8. The ATLAS ITk strip detector. Status of R&D

    Energy Technology Data Exchange (ETDEWEB)

    García Argos, Carlos, E-mail: carlos.garcia.argos@cern.ch

    2017-02-11

    While the LHC at CERN is ramping up luminosity after the discovery of the Higgs Boson in the ATLAS and CMS experiments in 2012, upgrades to the LHC and experiments are planned. The major upgrade is foreseen for 2024, with a roughly tenfold increase in luminosity, resulting in corresponding increases in particle rates and radiation doses. In ATLAS the entire Inner Detector will be replaced for Phase-II running with an all-silicon system. This paper concentrates on the strip part. Its layout foresees low-mass and modular yet highly integrated double-sided structures for the barrel and forward region. The design features conceptually simple modules made from electronic hybrids glued directly onto the silicon. Modules will then be assembled on both sides of large carbon-core structures with integrated cooling and electrical services.

  9. A Fastbus-based silicon strip readout system

    International Nuclear Information System (INIS)

    Neoustroev, P.; Stepanov, V.; Svoiski, M.; Uvarov, L.; Matthew, P.; Russ, J.; Cooper, P.

    1995-01-01

    The readout system we describe here is built specifically to work with the LBL-designed SVX chip. It is typical of systems using a master sequencer module to direct the trigger and readout cycles of the sparse data source and to push data into a digitization and storage module. (orig.)

  10. Commissioning of the Silicon Strip Detector (SSD) of ALICE

    NARCIS (Netherlands)

    Christakoglou, P.; Botje, M.A.J.; Mischke, A.; van Leeuwen, M.

    2009-01-01

    The latest results from the commissioning of the SSD with cosmics are presented in this paper. The hardware status of the detector, the front-end electronics, cooling, data acquisition and issues related to the on-line monitoring are shown. In addition, the procedures implemented and followed to

  11. First bulk and surface results for the ATLAS ITk Strip stereo annulus sensors

    CERN Document Server

    Hunter, Robert Francis Holub; The ATLAS collaboration; Affolder, Tony; Bohm, Jan; Botte, James Michael; Ciungu, Bianca; Dette, Karola; Dolezal, Zdenek; Escobar, Carlos; Fadeyev, Vitaliy

    2018-01-01

    A novel microstrip sensor geometry, the stereo annulus, has been developed for use in the end-cap of the ATLAS experiment's strip tracker upgrade at the HL-LHC. Its first implementation is in the ATLAS12EC sensors a large-area, radiation-hard, single-sided, ac-coupled, \

  12. Response of CZT drift-strip detector to X- and gamma rays

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Gerward, Leif

    2001-01-01

    The drift-strip method for improving the energy response of a CdZnTe (CZT) detector to hard X- and gamma rays is discussed. Results for a 10 x 10 x 3 mm(3) detector crystal demonstrate a remarkable improvement of the energy resolution. The full width at half maximum (FWHM) is 2.18 keV (3.6%), 2...

  13. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Chalupkova, I; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analyzed to determine the noise performance of the ...

  14. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    NAGAI, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analysed to determine the noise performance of the ...

  15. Using Comic Strips in Language Classes

    Science.gov (United States)

    Csabay, Noémi

    2006-01-01

    The author believes that using comic strips in language-learning classes has three main benefits. First, comic strips motivate younger learners. Second, they provide a context and logically connected sentences to help language learning. Third, their visual information is helpful for comprehension. The author argues that comic strips can be used in…

  16. ATLAS ITk Strip Detector for High-Luminosity LHC

    CERN Document Server

    Kroll, Jiri; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to 7.5E34 per second and cm2 corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of 3000/fb and hadron fluencies over 1E16 1 MeV neutron equivalent per cm2, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six discs on each side of the barrel, has resulted in the ATLAS ITk Strip Detector Technical Design Report (TDR), which starts the pre-production readiness phase at the ...

  17. ATLAS ITk Strip Detector for High-Luminosity LHC

    CERN Document Server

    Kroll, Jiri; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to $7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$ corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of $3000\\;\\mathrm{fb}^{-1}$ and hadron fluencies over $2\\times10^{16}\\;\\mathrm{n}_{\\mathrm{eq}}/\\mathrm{cm}^{2}$, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six disks on each side of the barrel, has resulted in the ATLAS Inner Tracker Strip Detector Technical Design R...

  18. The ATLAS tracker strip detector for HL-LHC

    CERN Document Server

    Cormier, Kyle James Read; The ATLAS collaboration

    2016-01-01

    As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

  19. The ATLAS tracker strip detector for HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00512833; The ATLAS collaboration

    2017-01-01

    As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

  20. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Yamada, M; The ATLAS collaboration

    2011-01-01

    The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance.

  1. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  2. Studies for the LHCb SciFi Tracker - Development of Modules from Scintillating Fibres and Tests of their Radiation Hardness

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00341158

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of $\\text 250 \\mu m$, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to $83 \\%$ on average at the end of the nominal lifetime of ...

  3. Studies for the LHCb SciFi tracker. Development of modules from scintillating fibres and tests of their radiation hardness

    Energy Technology Data Exchange (ETDEWEB)

    Ekelhof, Robert Jan

    2016-05-18

    The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of 250 μm, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to 83% on average at the end of the nominal lifetime of the SciFi Tracker. A machine and techniques to produce multi-layer fibre mats were developed and optimised. Procedures for the production and alignment are described. These are implemented in the serial production of the SciFi modules which will start in the second quarter 2016.

  4. Approaching total absorption of graphene strips using a c-Si subwavelength periodic membrane

    Science.gov (United States)

    Sang, Tian; Wang, Rui; Li, Junlang; Zhou, Jianyu; Wang, Yueke

    2018-04-01

    Approaching total absorption of graphene strips at near infrared using a crystalline-silicon (c-Si) subwavelength periodic membrane (SPM) is presented. The absorption in graphene strips in a c-Si SPM is enhanced by a resonant tip, which is resulted from the coupling between the guided mode and the radiation mode through symmetry breaking of the structure at near-normal incidence. The enhancement of the electric field intensity is increased 1939 times and the group velocity of light is decreased to 3.55 ×10-4c at resonance, and 99.3% absorption in graphene strips can be achieved by critical coupling at the incident angle of 2°. High absorption of the graphene strips can be maintained as the etching thickness, the strip width, and the period are altered. When this type of c-Si SPM with graphene strips is used in refractive index sensors, it shows excellent sensing properties due to its stable near-unity absorption.

  5. Method of stripping solid particles

    International Nuclear Information System (INIS)

    1980-01-01

    A method of stripping loaded solid particles is specified in which uniform batches of the loaded particles are passed successively upwardly through an elution column in the form of discrete plugs, the particles of which do not intermingle substantially with the particles of the vertically adjacent plug(s), and are contacted therein with eluant liquid flowed downwardly, strong eluate being withdrawn from the lower region of the column, the loaded particles being supplied as a slurry in a carrier liquid, and successive batches of loaded particles being isolated as measured batches and being separated from their carrier liquid before being contacted with strong eluate and slurried with the strong eluate into the lower region of the column. An example describes the stripping of ion exchange resin particles loaded with complex uranium ions. (author)

  6. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  7. Characterization of ion implanted silicon by the electrolytic reverse current

    International Nuclear Information System (INIS)

    Hueller, J.; Pham, M.T.

    1977-01-01

    The current voltage behaviour of ion implanted silicon electrodes in HF electrolyte is investigated. The electrolytic reverse current, i.e. the reaction rate of the minority carrier limited reactions is found to increase. The current increase depends on the implanted dose and layer stripping. Reason for the increased reverse current can be referred to radiation damage acting as generation centres for minority carriers. Measurement of the electrolytic reverse current can be used for determining damage profiles. Layer stripping is carried out by anodic dissolution in the same electrolyte. The sensitivity of this new method for characterizing ion implanted silicon layers lies at 10 11 to 10 12 atoms/cm 2 . (author)

  8. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Science.gov (United States)

    Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

  9. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  10. Microstructure, texture and magnetic properties of strip-cast 1.3% Si non-oriented electrical steels

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Yuanxiang, E-mail: yunboxu@126.com [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang (China); Xu Yunbo; Liu Haitao; Li Chenggang; Cao Guangming; Liu Zhenyu; Wang Guodong [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang (China)

    2012-10-15

    In this work, the evolution of microstructure, texture and magnetic properties of non-oriented 1.3% silicon steel processed using the twin-roll strip casting was investigated, especially under different solidification structures. A number of microstructures about the as-cast strips show that the initial solidification structure of casting a strip can be controlled by the melt superheats. The microstructures with the average grain size of {approx}100-400 {mu}m can be obtained in strips when the melt superheats are from 20 to 60 Degree-Sign C. A nearly random, diffuse, homogeneous texture under a low melt superheat, but comparatively developed {l_brace}100{r_brace} oriented grains are formed under a high melt superheat through the cast strip thickness. The relatively low core loss and high magnetic induction can be obtained in the cold rolled and annealed sheets when increasing the initial grain size of cast-strip. The textures in annealed sheets with coarse initial grain size are characterized by the relatively strong Goss component and {l_brace}001{r_brace} fiber but weak {gamma}-fiber component, which lead to the high permeability. - Highlights: Black-Right-Pointing-Pointer The superheat has an evident effect on the grain size and orientation of strip. Black-Right-Pointing-Pointer Developed Cube and Goss textures were formed in the annealed sheet. Black-Right-Pointing-Pointer High magnetic properties were obtained in the twin-rolled strip casting process.

  11. Microfabrication of hard x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik

    This thesis deals with the development of silicon compound refractive lenses (Si-CRLs) for shaping hard x-ray beams. The CRLs are to be fabricated using state of the art microfabrication techniques. The primary goal of the thesis work is to produce Si-CRLs with considerably increased structure...... and characterized with respect to their shape. Their optical performances were tested at the European Synchrotron Radiation Facility (ESRF). Two 1D-focusing Si-CRLs suitable as condensers in hard-XRM were developed utilizing the aforementioned two different strategies. The first Si-condenser showed focusing of a 56...... of space for sample surroundings and ensure low-divergent and wide x-ray beams with narrow waists. Both results are substantial improvements to what was available at the start of this thesis work. The challenge of making x-ray objectives in silicon by interdigitation of lenslets alternately focusing...

  12. MHD simulations of ram pressure stripping of a disc galaxy

    Science.gov (United States)

    Ramos-Martínez, Mariana; Gómez, Gilberto C.; Pérez-Villegas, Ángeles

    2018-05-01

    The removal of the interstellar medium (ISM) of disc galaxies through ram pressure stripping (RPS) has been extensively studied in numerous simulations. Nevertheless, the role of magnetic fields (MFs) on the gas dynamics in this process has been hardly studied, although the MF influence on the large-scale disc structure is well established. With this in mind, we present a 3D magnetohydrodynamic simulation of face-on RPS of a disc galaxy to study the impact of the galactic MF in the gas stripping. The main effect of including a galactic MF is a flared disc. When the intracluster medium wind hits this flared disc, oblique shocks are produced at the interaction interface, where the ISM is compressed, generating a gas inflow from large radii towards the central regions of the galaxy. This inflow is observed for {˜ } 150 {Myr} and may supply the central parts of the galaxy with material for star formation while the outskirts of the disc are being stripped of gas, thus the oblique shocks can induce and enhance the star formation in the remaining disc. We also observed that the MF alters the shape and structure of the swept gas, giving a smooth appearance in the magnetized case and clumpier and filamentary-like morphology in the hydro case. Finally, we estimated the truncation radius expected for our models using the Gunn-Gott criterion and found that that is in agreement with the simulations.

  13. Collisional stripping of planetary crusts

    Science.gov (United States)

    Carter, Philip J.; Leinhardt, Zoë M.; Elliott, Tim; Stewart, Sarah T.; Walter, Michael J.

    2018-02-01

    Geochemical studies of planetary accretion and evolution have invoked various degrees of collisional erosion to explain differences in bulk composition between planets and chondrites. Here we undertake a full, dynamical evaluation of 'crustal stripping' during accretion and its key geochemical consequences. Crusts are expected to contain a significant fraction of planetary budgets of incompatible elements, which include the major heat producing nuclides. We present smoothed particle hydrodynamics simulations of collisions between differentiated rocky planetesimals and planetary embryos. We find that the crust is preferentially lost relative to the mantle during impacts, and we have developed a scaling law based on these simulations that approximates the mass of crust that remains in the largest remnant. Using this scaling law and a recent set of N-body simulations of terrestrial planet formation, we have estimated the maximum effect of crustal stripping on incompatible element abundances during the accretion of planetary embryos. We find that on average approximately one third of the initial crust is stripped from embryos as they accrete, which leads to a reduction of ∼20% in the budgets of the heat producing elements if the stripped crust does not reaccrete. Erosion of crusts can lead to non-chondritic ratios of incompatible elements, but the magnitude of this effect depends sensitively on the details of the crust-forming melting process on the planetesimals. The Lu/Hf system is fractionated for a wide range of crustal formation scenarios. Using eucrites (the products of planetesimal silicate melting, thought to represent the crust of Vesta) as a guide to the Lu/Hf of planetesimal crust partially lost during accretion, we predict the Earth could evolve to a superchondritic 176Hf/177Hf (3-5 parts per ten thousand) at present day. Such values are in keeping with compositional estimates of the bulk Earth. Stripping of planetary crusts during accretion can lead to

  14. Imaging monolithic silicon detector telescopes

    International Nuclear Information System (INIS)

    Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

    2008-01-01

    We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

  15. Study of position resolution and electron-hadron separation of electromagnetic calorimeter with a silicon structure

    International Nuclear Information System (INIS)

    Gorodnichev, V.B.; Kachanov, V.A.; Khodyrev, V.Yu.; Kurchaninov, L.L.; Rykali, V.V.; Solovianov, V.L.; Ukhalov, M.N.

    1993-01-01

    The maximum shower silicon strip detectors embedded in a module of sandwich-type electromagnetic calorimeter have been tested. The position resolution at different depths of the silicon structure has been measured. The results on electron-hadron separation obtained as a byproduct in this study are presented, and possibility of their improvement is discussed. 8 refs., 10 figs., 1 tab

  16. Silicon microstrip detectors with SVX chip readout

    International Nuclear Information System (INIS)

    Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Masciocchi, S.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.S.; Timm, S.; Vorwalter, K.; Werding, R.

    1995-01-01

    A new silicon strip detector has been designed for the fixed target experiment WA89 at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into a FASTBUS memory. The detector provides a fast readout by offering zero-suppressed data extraction on the chip. The silicon counters are the largest detectors built on a monocrystal so far in order to achieve good transversal acceptance. Construction and performance during the 1993 data taking run are discussed. ((orig.))

  17. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  18. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

    2016-09-21

    A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights:

  19. The Control System for the CMS Strip Tracking Detector

    CERN Document Server

    Fahrer, Manuel; Chen, Jie; Dierlamm, Alexander; Frey, Martin; Masetti, Lorenzo; Militaru, Otilia; Shah, Yousaf; Stringer, Robert; Tsirou, Andromachi

    2008-01-01

    The Tracker of the CMS silicon strip tracking detector covers a surface of 206 m2. 9648128 channels are available on 75376 APV front-end chips on 15232 modules, built of 24328 silicon sensors. The power supply of the detector modules is split up in 1944 power supplies with two low voltage for front end power and two high voltage channels each for the bias voltage of the silicon sensors. In addition 356 low voltage channels are needed to power the control chain. The tracker will run at -20°C at low relative humidity for at least 10 years. The Tracker Control System handles all interdependencies of control, low and high voltages, as well as fast ramp downs in case of higher than allowed temperatures or currents in the detector and experimental cavern problems. This is ensured by evaluating $10^{4}$ power supply parameters, $10^{3}$ information from Tracker Safety System and $10^{5}$ information from the tracker front end.

  20. Design and characterization of integrated front-end transistors in a micro-strip detector technology

    International Nuclear Information System (INIS)

    Simi, G.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Morganti, M.; U. Pignatel, G.; Ratti, L.; Re, V.; Rizzo, G.; Speziali, V.; Zorzi, N.

    2002-01-01

    We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures

  1. Dynamic Underground Stripping Demonstration Project

    International Nuclear Information System (INIS)

    Aines, R.; Newmark, R.; McConachie, W.; Rice, D.; Ramirez, A.; Siegel, W.; Buettner, M.; Daily, W.; Krauter, P.; Folsom, E.; Boegel, A.J.; Bishop, D.; udel, K.

    1992-03-01

    LLNL is collaborating with the UC Berkeley College of Engineering to develop and demonstrate a system of thermal remediation and underground imaging techniques for use in rapid cleanup of localized underground spills. Called ''Dynamic Stripping'' to reflect the rapid and controllable nature of the process, it will combine steam injection, direct electrical heating, and tomographic geophysical imaging in a cleanup of the LLNL gasoline spill. In the first 8 months of the project, a Clean Site engineering test was conducted to prove the field application of the techniques before moving to the contaminated site in FY 92

  2. Staves and Petals: Multi-module Local Support Structures of the ATLAS ITk Strips Upgrade

    CERN Document Server

    Garcia-Argos, Carlos; The ATLAS collaboration

    2017-01-01

    The ATLAS Inner Tracker (ITk) is an all-silicon tracker that will replace the existing inner detector at the Phase-II Upgrade of ATLAS. The outermost part of the tracker consists of the strips tracker, in which the sensors elements consist of silicon micro-strip sensors with strip lengths varying from 1.7 to up to 10 cm. The current design, at the moment under internal review in the Strips part of the Technical Design Report (TDR), envisions a four-layer barrel and two six-disk endcap regions. The sensor and readout units (“modules”) are directly glued onto multi-module, low-mass, high thermal performance carbon fiber structures, called “staves” for the barrel and “petals” for the endcap. They provide cooling, power, data and control lines to the modules with a minimal amount of external services. An extensive prototyping program was put in place over the last years to fully characterize these structures mechanically, thermally, and electrically. Thermo-mechanical stave and petal prototypes have r...

  3. Staves and Petals: Multi-module Local Support Structures of the ATLAS ITk Strips Upgrade

    CERN Document Server

    Rodriguez Rodriguez, Daniel; The ATLAS collaboration

    2017-01-01

    The ATLAS Inner Tracker (ITk) is an all-silicon tracker that will replace the existing inner detector at the Phase-II Upgrade of ATLAS. The outermost part of the tracker consists of the strips tracker, in which the sensor elements consist of silicon micro-strip sensors with strip lengths varying from 1.7 to up to 10 cm. The current design is part of the ATLAS ITk Strip Detector Technical Design Report (TDR) and envisions a four-layer barrel and two six-disk end-cap regions. The sensor and readout units (``modules'') are directly glued onto multi-module, low-mass, high thermal performance carbon fibre structures, called “staves” for the barrel and ``petals'' for the end-cap. They provide cooling, power, data and control lines to the modules with a minimal amount of external services. An extensive prototyping program was put in place over the last years to fully characterise these structures mechanically, thermally, and electrically. Thermo-mechanical stave and petal prototypes have recently been built and ...

  4. Readout architecture for the Pixel-Strip module of the CMS Outer Tracker Phase-2 upgrade

    CERN Document Server

    Caratelli, Alessandro; Jan Kaplon; Kloukinas, Konstantinos; Simone Scarfi

    2017-01-01

    The Outer Tracker upgrade of the Compact Muon Solenoid (CMS) experiment at CERN introduces new challenges for the front-end readout electronics. In particular, the capability of identifying particles with high transverse momentum using modules with double sensor layers requires high speed real time interconnects between readout ASICs. The Pixel-Strip module combines a pixelated silicon layer with a silicon-strip layer. Consequently, it needs two different readout ASICs, namely the Short Strip ASIC (SSA) for the strip sensor and the Macro Pixel ASIC (MPA) for the pixelated sensor. The architecture proposed in this paper allows for a total data flow between readout ASICs of $\\sim$100\\,Gbps and reduces the output data flow from 1.3\\,Tbps to 30\\,Gbps per module while limiting the total power density to below 100\\,mW/cm$^2$. In addition a system-level simulation framework of all the front-end readout ASICs is developed in order to verify the data processing algorithm and the hardware implementation allowing mult...

  5. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Nagai, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is one of the key precision tracking devices in the ATLAS experiment at CERN Large Hadron Collider (LHC). The SCT was constructed of 4088 modules for a total of 6.3 million silicon strips and was installed into the ATLAS experiment in 2007. The SCT has been fully operational since then, and achieves a good tracking performance from the startup of the LHC operation.

  6. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Yamada, M; The ATLAS collaboration

    2011-01-01

    The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance. In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The Semi-Conductor Tracker (SCT) is the key precision tracking device in ATLAS, made from silicon micro-strip detectors processed in the planar p-in-n technology. The signals from the strip...

  7. Development and characterisation of a radiation hard readout chip for the LHCb experiment

    CERN Document Server

    Baumeister, Daniel; Stachel, Johanna

    2003-01-01

    Within this doctoral thesis parts of the radiation hard readout chip Beetle have been developed and characterised, before and after irradiation. The design work included the analogue memory with the corresponding readout amplifier as well as components of the digital control circuitry. An interface compatible with the I2C-standard and the control logic for event readout have been implemented. A scheme has been developed which ensures the robustness of the Beetle chip against Single-Event Upset (SEU). This includes the consistent use of triple-redundant memory devices together with a self-triggered correction in parts of the circuit. The Beetle ASIC is a 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier and a CR-RC pulse shaper. It features an equivalent noise charge of ENC = 497 e− +48.3 e−/pF·Cin. The analogue memory is a switched capacitor array, which provides a latency of max. 4 µs. The 128 channels are transmitted off chip in 9...

  8. Depletive stripping chronopotentiometry : a major step forward in electrochemical stripping techniques for metal ion speciation analysis

    NARCIS (Netherlands)

    Town, R.M.; Leeuwen, van H.P.

    2004-01-01

    A comparative evaluation of the utility of the various modes of stripping chronopotentiometry (SCP) for trace metal speciation analysis is presented in the broad context of stripping voltammetric techniques. The remarkable fundamental advantages of depletive SCP at scanned deposition potential

  9. Potential profile in a conducting polymer strip

    DEFF Research Database (Denmark)

    Bay, Lasse; West, Keld; Vlachopoulos, Nikolaos

    2002-01-01

    Many conjugated polymers show an appreciable difference in volume between their oxidized and reduced forms. This property can be utilized in soft electrochemically driven actuators, "artificial muscles". Several geometries have been proposed for the conversion of the volume expansion into useful...... mechanical work. In a particularly simple geometry, the length change of polymer strips is exploited. The polymer strips are connected to the driving circuit at the end of the strip that is attached to the support of the device. The other end of the strip is connected to the load. The advantage of this set...

  10. Optimizing the Stripping Procedure for LHCb

    CERN Document Server

    Richardson, Rachel

    2017-01-01

    The LHCb experiment faces a major challenge from the large amounts of data received while the LHC is running. The ability to sort this information in a useful manner is important for working groups to perform physics analyses. Both hardware and software triggers are used to decrease the data rate and then the stripping process is used to sort the data into streams and further into stripping lines. This project studies the hundreds of stripping lines to look for overlaps between them in order to make the stripping process more efficient.

  11. Study on lifetime of C stripping foils

    International Nuclear Information System (INIS)

    Zhang Hongbin; Lu Ziwei; Zhao Yongtao; Li Zhankui; Xu Hushan; Xiao Guoqing; Wang Yuyu; Zhang Ling; Li Longcai; Fang Yan

    2007-01-01

    The carbon stripping foils can be prepared with the AC and DC arc discharge methods, or even sandwiched with AC-DC alternative layers. The lifetime of the carbon stripping foils of 19 μg/cm 2 prepared with different methods and/or structures was measured. The factors affecting the bombarding lifetime of the carbon stripping foils, especially the method of the foil preparation and the structure of the carbon stripping foils, were discussed. It is observed that the foils prepared with the DC arc discharge method have a longer bombarding lifetime than those prepared with the AC arc discharge method. (authors)

  12. ATLAS Silicon Microstrip Tracker Operation and Performance

    CERN Document Server

    Chalupkova, I; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector (ID) of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules with a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each side of the barrel). The SCT silicon microstrip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICs ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational ever since. Calibration data has been taken regularly and analysed to determine the noise performance of the system. ...

  13. The Whipple Strip Sky Survey

    Science.gov (United States)

    Kertzman, M. P.

    As part of the normal operation of the Whipple 10m Gamma Ray telescope, ten minute drift scan “zenith” runs are made each night of observation for use as calibration. Most of the events recorded during a zenith run are due to the background of cosmic ray showers. However, it would be possible for a hitherto unknown source of gamma rays to drift through the field. This paper reports the results of a search for serendipitous high energy gamma ray sources in the Whipple 10m nightly calibration zenith data. From 2000-2004 nightly calibration runs were taken at an elevation of 89 º. A 2- D analysis of these drift scan runs produces a strip of width ~ 3.5º in declination and spanning the full range of right ascension. In the 2004-05 observing season the calibration runs were taken at elevations of 86° and 83°. Beginning in the 2005-06 season, the nightly calibration runs were taken at an elevation of 80º. Collectively, these drift scans cover a strip approximately 12.5º wide in declination, centered at declination 37.18º, and spanning the full range of RA. The analysis procedures developed for drift scan data, the sensitivity of the method, and the results will be presented.

  14. Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

    International Nuclear Information System (INIS)

    La Rocca, P.; Billotta, S.; Blancato, A.A.; Bonanno, D.; Bonanno, G.; Fallica, G.; Garozzo, S.; Lo Presti, D.; Marano, D.; Pugliatti, C.; Riggi, F.; Romeo, G.; Santagati, G.; Valvo, G.

    2015-01-01

    The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers

  15. Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

    Energy Technology Data Exchange (ETDEWEB)

    La Rocca, P., E-mail: paola.larocca@ct.infn.it [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Billotta, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Blancato, A.A.; Bonanno, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); Bonanno, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Fallica, G. [STMicroelectronics - Catania (Italy); Garozzo, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Lo Presti, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Marano, D. [INAF - Osservatorio Astrofisico di Catania (Italy); Pugliatti, C.; Riggi, F. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Romeo, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Santagati, G. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Valvo, G. [STMicroelectronics - Catania (Italy)

    2015-07-01

    The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers.

  16. Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

    Science.gov (United States)

    Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

    2017-01-01

    Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

  17. The 'KATOD-1' strip readout ASIC for cathode strip chamber

    International Nuclear Information System (INIS)

    Golutvin, I.A.; Gorbunov, N.V.; Karzhavin, V.Yu.; Khabarov, V.S.; Movchan, S.A.; Smolin, D.A.; Dvornikov, O.V.; Shumejko, N.M.; Chekhovskij, V.A.

    2001-01-01

    The 'KATOD-1', a 16-channels readout ASIC, has been designed to perform tests of P3 and P4 full-scale prototypes of the cathode strip chamber for the ME1/1 forward muon station of the Compact Muon Solenoid (CMS) experiment. The ASIC channel consists of two charge-sensitive preamplifiers, a three-stage shaper with cancellation, and an output driver. The ASIC is instrumented with control of gain, in the range of (-4.2 : +5.0) mV/fC, and control of output pulse-shape. The equivalent input noise is equal to 2400 e with the slope of 12 e/pF for detector capacity up to 200 pF. The peaking time is 100 ns for the chamber signal. The ASIC has been produced by a microwave Bi-jFET technology

  18. The "KATOD-1" Strip Readout ASIC for Cathode Strip Chamber

    CERN Document Server

    Golutvin, I A; Karjavin, V Yu; Khabarov, V S; Movchan, S A; Smolin, D A; Dvornikov, O V; Shumeiko, N M; Tchekhovski, V A

    2001-01-01

    The "KATOD-1", a 16-channels readout ASIC, has been designed to perform tests of P3 and P4 full-scale prototypes of the cathode strip chamber for the ME1/1 forward muon station of the Compact Muon Solenoid (CMS) experiment. The ASIC channel consists of two charge-sensitive preamplifiers, a three-stage shaper with tail cancellation, and an output driver. The ASIC is instrumented with control of gain, in the range of (-4.2\\div +5.0) mV/fC, and control of output pulse-shape. The equivalent input noise is equal to 2400 e with the slope of 12 e/pF for detector capacity up to 200 pF. The peaking time is 100 ns for the chamber signal. The ASIC has been produced by a microwave Bi-jFET technology.

  19. Low-resistance strip sensors for beam-loss event protection

    International Nuclear Information System (INIS)

    Ullán, M.; Benítez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; García, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A; Sadrozinski, H.F.-W.

    2014-01-01

    AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punch-through structure leading to large voltages. We present here our developments to fabricate low-resistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology

  20. Silicon tracker for the compressed baryonic matter experiment

    Directory of Open Access Journals (Sweden)

    M. S. Borysova

    2008-12-01

    Full Text Available Design of STS and module prototype of silicon micro-strip detector for particle momenta measurements with a resolution of around Δp/p ≈ 1 % are presented. Very high radiation level and inhomogeneous track distribution result in modular construction of the detector stations. The micro-strip detectors are planned to be read out with the help of СВМ-XYTER chip. The system requirements include radiation tolerant sensors with high spatial resolution and a fast readout compatible with high-level-only triggers. Concept of the silicon detection system and the R&D on micro-strip sensors as well as front-end electronics for the building blocks of the detector stations are discussed.

  1. Mechanical behaviour of a creased thin strip

    Directory of Open Access Journals (Sweden)

    J. Liu

    2018-02-01

    Full Text Available In this study the mechanical behaviour of a creased thin strip under opposite-sense bending was investigated. It was found that a simple crease, which led to the increase of the second moment of area, could significantly alter the overall mechanical behaviour of a thin strip, for example the peak moment could be increased by 100 times. The crease was treated as a cylindrical segment of a small radius. Parametric studies demonstrated that the geometry of the strip could strongly influence its flexural behaviour. We showed that the uniform thickness and the radius of the creased segment had the greatest and the least influence on the mechanical behaviour, respectively. We further revealed that material properties could dramatically affect the overall mechanical behaviour of the creased strip by gradually changing the material from being linear elastic to elastic-perfect plastic. After the formation of the fold, the moment of the two ends of the strip differed considerably when the elasto-plastic materials were used, especially for materials with smaller tangent modulus in the plastic range. The deformation patterns of the thin strips from the finite element simulations were verified by physical models made of thin metal strips. The findings from this study provide useful information for designing origami structures for engineering applications using creased thin strips.

  2. Nuclear reactor spring strip grid spacer

    International Nuclear Information System (INIS)

    Patterson, J.F.; Flora, B.S.

    1978-01-01

    A bimetallic grid spacer is described comprising a grid structure of zircaloy formed by intersecting striplike members which define fuel element openings for receiving fuel elements and spring strips made of Inconel positioned within the grid structure for cooperating with the fuel elements to maintain them in their desired position. A plurality of these spring strips extend longitudinally between sides of the grid structure, being locked in position by the grid retaining strips. The fuel rods, which are disposed in the fuel openings formed in the grid structure, are positioned by means of the springs associated with the spring strips and a plurality of dimples which extend from the zircaloy grid structure into the openings. In one embodiment the strips are disposed in a plurality of arrays with those spring strip arrays situated in opposing diagonal quadrants of the grid structure extending in the same direction and adjacent spring strip arrays in each half of the spacer extending in relatively perpendicular directions. Other variations of the spring strip arrangements for a particular fuel design are disclosed herein

  3. Ultrasonic examination of JBK-75 strip material

    International Nuclear Information System (INIS)

    Cook, K.V.; Cunningham, R.A. Jr.; Lewis, J.C.; McClung, R.W.

    1982-12-01

    An ultrasonic inspection system was assembled to inspect the JBK-75 stainless steel sheath material (for the Large Coil Project) for the Westinghouse-Airco superconducting magnet program. The mechanical system provided for handling the 180-kg (400-lb) coils of strip material [1.6 mm thick by 78 mm wide by 90 to 120 m long (0.064 by 3.07 in. by 300 to 400 ft)], feeding the strip through the ultrasonic inspection and cleaning stations, and respooling the coils. We inspected 54 coils of strip for both longitudinal and laminar flaws. Simulated flaws were used to calibrate both inspections. Saw-cut notches [0.28 mm deep (0.011 in., about 17% of the strip thickness)] were used to calibrate the longitudinal flaw inspections; 1.59-mm-diam (0.063-in.) flat-bottom holes drilled halfway through a calibration strip were used to calibrate the laminar flaw tests

  4. Model for prediction of strip temperature in hot strip steel mill

    International Nuclear Information System (INIS)

    Panjkovic, Vladimir

    2007-01-01

    Proper functioning of set-up models in a hot strip steel mill requires reliable prediction of strip temperature. Temperature prediction is particularly important for accurate calculation of rolling force because of strong dependence of yield stress and strip microstructure on temperature. A comprehensive model was developed to replace an obsolete model in the Western Port hot strip mill of BlueScope Steel. The new model predicts the strip temperature evolution from the roughing mill exit to the finishing mill exit. It takes into account the radiative and convective heat losses, forced flow boiling and film boiling of water at strip surface, deformation heat in the roll gap, frictional sliding heat, heat of scale formation and the heat transfer between strip and work rolls through an oxide layer. The significance of phase transformation was also investigated. Model was tested with plant measurements and benchmarked against other models in the literature, and its performance was very good

  5. Model for prediction of strip temperature in hot strip steel mill

    Energy Technology Data Exchange (ETDEWEB)

    Panjkovic, Vladimir [BlueScope Steel, TEOB, 1 Bayview Road, Hastings Vic. 3915 (Australia)]. E-mail: Vladimir.Panjkovic@BlueScopeSteel.com

    2007-10-15

    Proper functioning of set-up models in a hot strip steel mill requires reliable prediction of strip temperature. Temperature prediction is particularly important for accurate calculation of rolling force because of strong dependence of yield stress and strip microstructure on temperature. A comprehensive model was developed to replace an obsolete model in the Western Port hot strip mill of BlueScope Steel. The new model predicts the strip temperature evolution from the roughing mill exit to the finishing mill exit. It takes into account the radiative and convective heat losses, forced flow boiling and film boiling of water at strip surface, deformation heat in the roll gap, frictional sliding heat, heat of scale formation and the heat transfer between strip and work rolls through an oxide layer. The significance of phase transformation was also investigated. Model was tested with plant measurements and benchmarked against other models in the literature, and its performance was very good.

  6. Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam; hide

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  7. A New Segment Building Algorithm for the Cathode Strip Chambers in the CMS Experiment

    Directory of Open Access Journals (Sweden)

    Golutvin I.

    2016-01-01

    Full Text Available A new segment building algorithm for the Cathode Strip Chambers in the CMS experiment is presented. A detailed description of the new algorithm is given along with a comparison with the algorithm used in the CMS software. The new segment builder was tested with different Monte-Carlo data samples. The new algorithm is meant to be robust and effective for hard muons and the higher luminosity that is expected in the future at the LHC.

  8. Fabrication and properties of strip casting 4.5 wt% Si steel thin sheet

    Energy Technology Data Exchange (ETDEWEB)

    Zu, Guoqing, E-mail: gz854@uowmail.edu.au [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522