Quality assurance of the silicon microstrip sensors for the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Yamada, M; The ATLAS collaboration

2011-01-01

The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance. In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The Semi-Conductor Tracker (SCT) is the key precision tracking device in ATLAS, made from silicon micro-strip detectors processed in the planar p-in-n technology. The signals from the strip...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Rosendahl, P L; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon microstrip detector part of the ATLAS experiment at the CERN Large Hadron Collider (LHC). Together with the rest for the ATLAS Inner Detector (ID) it provides vital precision tracking information of charged particles. In this paper the performance and operational status of the SCT in the last two years of ATLAS data taking are reviewed.

Thermal Properties of the Silicon Microstrip Endcap Detector

CERN Document Server

Feld, Lutz; Hammarström, R

1998-01-01

Irradiated silicon detectors must be cooled in order to guarantee stable short and long term operation. Using the SiF1 milestone prototype we have performed a detailed analysis of the thermal properties of the silicon microstrip endcap detector. The strongest constraint on the cooling system is shown to be set by the need to avoid thermal runaway of the silicon detectors. We show that, taking into account the radiation damage to the silicon after 10 years of LHC operation and including some safety margin, the detector will need a cooling fluid temperature of around -20 C. The highest temperature on the silicon will then be in the range -15 C to -10 C. This sets an upper limit on the ambient temperature in the tracker volume.

The silicon microstrip sensors of the ATLAS semiconductor tracker

Czech Academy of Sciences Publication Activity Database

Ahmad, A.; Albrechtskirchinger, Z.; Allport, P.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

2007-01-01

Roč. 578, - (2007), s. 98-118 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * SCT * silicon * microstrip * module * LHC Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.114, year: 2007

The silicon tracking system of the CBM experiment at FAIR. Development of microstrip sensors and signal transmission lines for a low-mass, low-noise system

International Nuclear Information System (INIS)

Singla, Minni

2014-01-01

In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in the Silicon Tracking System (STS) of the fixed-target heavy-ion Compressed Baryonic Matter (CBM) experiment which is under development at the upcoming Facility for Antiproton and ion Research (FAIR) in Darmstadt, Germany. The highly segmented low-mass tracking system is a central CBM detector system to resolve the high tracking densities of charged particles originating from beam-target interactions. Considering the low material budget requirement the double-sided silicon microstrip detectors have been used in several planar tracking stations. The readout electronics is planned to be installed at the periphery of the tracking stations along with the cooling system. Low-mass multi-line readout cables shall bridge the distance between the microstrip sensors and the readout electronics. The CBM running operational scenario suggests that some parts of the tracking stations are expected to be exposed to a total integrated particle fluence of the order of 1 x 10 14 n eq /cm 2 . After 1 x 10 14 n eq /cm 2 the damaged modules in the tracking stations will be replaced. Thus radiation hard sensor is an important requirement for the sensors. Moreover, to cope with the high reaction rates, free-streaming (triggerless) readout electronics with online event reconstruction must be used which require high signal-to-noise (SNR) ratio (i.e., high signal efficiency, low noise contributions). Therefore, reduction in noise is a major goal of the sensor and cable development. For better insight into the different aspects of the silicon microstrip sensors and multi-line readout cables, the simulation study has been performed using SYNOPSYS TCAD tools. 3D models of the silicon microstrip sensors and the readout cables were implemented which is motivated by the stereoscopic

Use of silicon microstrip detectors in medical diagnostic x-rays

International Nuclear Information System (INIS)

Cabal Rodriguez, Ana Ester

2004-11-01

This work presents the development and characterization of a single photon counting system based on silicon microstrip detectors, used in High Energy Physics experiments, and on low noise multichannel readout electronics. The thesis evaluates the feasibility of dual energy X-ray imaging with silicon microstrip detectors to be applied on medical diagnosis. Dual energy mammographic and angiographic experimental tests have been performed using the developed counting systems proto types, properly phantoms and quasi-monochromatic X ray beams, obtained on a compact dichromatic source based on a conventional X-ray tube and a mosaic crystal. A Monte Carlo simulation of the performance of the experimental setup for dual X-ray imaging has also been carried out using MCNP-4C transport code. We obtained good agreement between MCNP results and the experimental data. (Author)

Dismantling the silicon microstrip detector on L3

CERN Multimedia

Laurent Guiraud

2001-01-01

The silicon microstrip detector is located at the heart of the detector and must be kept cool to prevent thermal noise. The work shown here is the removal of the cooling system. L3 was dismantled as part of the closure of the entire LEP accelerator in 2000 to make way for the new LHC.

ATLAS silicon microstrip detector system (SCT)

International Nuclear Information System (INIS)

Unno, Y.

2003-01-01

The S CT together with the pixel and the transition radiation tracker systems and with a central solenoid forms the central tracking system of the ATLAS detector at LHC. Series production of SCT Silicon microstrip sensors is near completion. The sensors have been shown to be robust against high voltage operation to the 500 V required after fluences of 3x10 14 protons/cm 2 . SCT barrel modules are in series production. A low-noise CCD camera has been used to debug the onset of leakage currents

Characterization procedures for double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

1995-08-15

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

Characterization procedures for double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

1995-01-01

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

International Nuclear Information System (INIS)

Horisberger, R.

1990-01-01

It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

Spatial resolution of wedge shaped silicon microstrip detectors

International Nuclear Information System (INIS)

Anticic, T.; Barnett, B.; Blumenfeld, B.; Chien, C.Y.; Fisher, P.; Gougas, A.; Krizmanic, J.; Madansky, L.; Newman, D.; Orndorff, J.; Pevsner, A.; Spangler, J.

1995-01-01

Several wedge-shaped silicon microstrip detectors with pitches from 30 to 100 μm have been designed by our group and beam tested at the CERN SPS. We find the spatial resolution σ becomes larger at the rate of 0.21 μm per 1 μm increase in pitch, but the number of strips per cluster remains about the same as the pitch varies from 30 to 100 μm. (orig.)

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Chalupkova, I; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analyzed to determine the noise performance of the ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

NAGAI, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. The completed SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational since then. Calibration data has been taken regularly and analysed to determine the noise performance of the ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Chalupkova, I; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector (ID) of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules with a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each side of the barrel). The SCT silicon microstrip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICs ABCD3TA, working in the binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. SCT has been installed inside the ATLAS experimental cavern since 2007 and has been operational ever since. Calibration data has been taken regularly and analysed to determine the noise performance of the system. ...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Yamada, M; The ATLAS collaboration

2011-01-01

The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance.

Microstrip detector for the ALICE experiment

CERN Multimedia

Laurent Guiraud

1996-01-01

This photo shows a close up of one of the silicon microstrip detectors that will be installed on the ALICE experiment at the LHC. 1698 double-sided modules of these silicon microstrips will be installed in the two outermost layers of the ALICE inner tracking system. The microstrips have to be specially designed to withstand the high resolution levels at the heart of the detector.

Gas microstrip detectors on polymer, silicon and glass substrates

International Nuclear Information System (INIS)

Barasch, E.F.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Gaedke, R.M.; Goss, L.T.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.; Vanstraelen, G.; Wahl, J.

1993-01-01

We present results on the performance of Gas Microstrip Detectors on various substrates. These include a 300 μm anode-anode pitch pattern on Tempax borosilicate glass and ABS/copolyether, a 200 μm pattern on Upilex ''S'' polyimide, Texin 4215, Tedlar, ion-implanted Kapton, orientation-dependent etched flat-topped silicon (''knife-edge chamber''), and iron-vanadium glass, and a 100 μm pitch pattern on Upilex ''S'' and ion-implanted Kapton. (orig.)

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

ATLAS silicon microstrip Semiconductor Tracker (SCT)

International Nuclear Information System (INIS)

Unno, Y.

2000-01-01

Silicon microstrip semiconductor tracking system (SCT) will be in operation in the ATLAS detector in the Large Hadron Collider (LHC) at CERN. Challenging issues in the SCT are the radiation tolerance to the fluence of 2x10 14 1-MeV-neutron-equivalent particles/cm 2 at the designed luminosity of 1x10 34 cm -2 /s of the proton-proton collisions and the speed of the electronics to identify the crossing bunches at 25 ns. The developments and the status of the SCT are presented from the point of view of these issues. Series production of the SCT will start in the year 2001 and the SCT will be installed into the ATLAS detector during 2003-2004

Performance of a silicon microstrip detector in a high radiation environment

International Nuclear Information System (INIS)

Mishra, C.S.; Brown, C.N.; Kapustinsky, J.; Leitch, M.J.; McGaughey, P.L.; Peng, J.C.; Sailor, W.; Holzscheiter, K.; Sadler, M.

1990-01-01

This paper reports on the performance of a silicon microstrip detector that has been studied in a high rate environment using electron, pion, and proton beams. The pulse height, time response, and leakage current have been studied as a function of particle fluence up to a total integrated flus of about 4 x 10 14 protons/cm 2

Performance characteristics and radiation damage results from the Fermilab E706 silicon microstrip detector system

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Orris, D; Shepard, P F; Weerasundara, P D; Choudhary, B C; Joshi, U; Kapoor, V; Shivpuri, R; Baker, W

1989-07-01

A charged particle spectrometer containing a 7120-channel silicon microstrip detector system, one component of Fermilab experiment E706 to study direct photon production in hadron-hadron collisions, was utilized in a run in which 6 million events were recorded. We describe the silicon system, provide early results of track and vertex reconstruction, and present data on the radiation damage to the silicon wafers resulting from the narrow high intensity beam. (orig.).

Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

International Nuclear Information System (INIS)

Ruggiero, Gennaro

2003-01-01

Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a powerful software package that simulates the signal generation in these devices has been developed. Moreover in this thesis it has been also shown that the degradation due to radiation in silicon detectors can be strongly reduced if the data taking is done with detectors operated at 130 K. This makes low temperature operation that benefits of the recovery of the charge collection efficiency in highly irradiated silicon detectors (also known as Lazarus effect) an optimal option for future high luminosity experiments. (author)

Design optimization of a breast imaging system based on silicon microstrip detectors

International Nuclear Information System (INIS)

Stres, S.; Mikuz, M.

2000-01-01

A mammographic imaging set-up using silicon microstrip detectors in edge-on geometry was simulated using the GEANT package. Deposited energy in tissue of various thicknesses was evaluated and shown to agree to within 10% with reference calculations. Optimal energies as well as spectra for mammography with silicon detectors were determined by maximizing the figure of merit of a realistic imaging set-up. The scattered to primary radiation ratio was studied for various detector geometries. It was found that fan-shaped detectors are needed to maintain the image quality for divergent photon beams. (author)

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

International Nuclear Information System (INIS)

Feld, L.; Karpinski, W.; Klein, K.

2016-04-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Feld, L.; Karpinski, W.; Klein, K. [RWTH Aachen Univ. (Germany). 1. Physikalisches Institut B; Collaboration: The PETTL Collaboration; and others

2016-04-15

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Strip defect recognition in electrical tests of silicon microstrip sensors

Energy Technology Data Exchange (ETDEWEB)

Valentan, Manfred, E-mail: valentan@mpp.mpg.de

2017-02-11

This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

New results on silicon microstrip detectors of CMS tracker

International Nuclear Information System (INIS)

Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

2000-01-01

Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

Gas microstrip chambers

International Nuclear Information System (INIS)

McIntyre, P.M.; Barasch, E.F.; Bowcock, T.J.V.; Demroff, H.P.; Elliott, S.M.; Howe, M.R.; Lee, B.; Mazumdar, T.K.; Pang, Y.; Smith, D.D.; Wahl, J.; Wu, Y.; Yue, W.K.; Gaedke, R.M.; Vanstraelen, G.

1992-01-01

The gas microstrip chamber has been developed from concept to experimental system during the past three years. A pattern of anode and grid lines are microfabricated onto a dielectric substrate and configured as a high-resolution MWPC. Four recent developments are described: Suitable plastic substrates and lithography techniques for large-area chambers; non-planar silicon-based chambers for 20 μm resolution; integrated on-board synchronous front-end electronics and data buffering; and a porous silicon active cathode for enhanced efficiency and time response. The microstrip chamber appears to be a promising technology for applications in microvertex, tracking spectrometer, muon spectrometer, and transition radiation detection. (orig.)

The ATLAS Silicon Microstrip Tracker

CERN Document Server

Haefner, Petra

2010-01-01

In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV. This was followed by collisions at the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is a precision tracking device in ATLAS made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICs working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibers. The completed SCT has been installed inside the ATLAS experiment. Since then the detector was operated for two years under realistic conditions. Calibration data has been taken and analysed to determine the performance of the system. In addition, extensive commissioning with cosmic ray events has been performed both with and without magnetic field. The sensor behaviour in magnetic field was studied by measurements of the Lorentz angle. After ...

A counting silicon microstrip detector for precision compton polarimetry

CERN Document Server

Doll, D W; Hillert, W; Krüger, H; Stammschroer, K; Wermes, N

2002-01-01

A detector for the detection of laser photons backscattered off an incident high-energy electron beam for precision Compton polarimetry in the 3.5 GeV electron stretcher ring ELSA at Bonn University has been developed using individual photon counting. The photon counting detector is based on a silicon microstrip detector system using dedicated ASIC chips. The produced hits by the pair converted Compton photons are accumulated rather than individually read out. A transverse profile displacement can be measured with mu m accuracy rendering a polarization measurement of the order of 1% on the time scale of 10-15 min possible.

Performance of the ALIBAVA portable readout system with irradiated and non-irradiated microstrip silicon sensors

International Nuclear Information System (INIS)

Marco-Hernadez, R.

2009-01-01

A readout system for microstrip silicon sensors has been developed as a result of collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two Beetle chips to read out the detector(s). The Beetle chip is an analogue pipelined readout chip used in the LHCb experiment. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system is being to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two Beetle readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type irradiated and non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

Technology development of p-type microstrip detectors with radiation hard p-spray isolation

International Nuclear Information System (INIS)

Pellegrini, G.; Fleta, C.; Campabadal, F.; Diez, S.; Lozano, M.; Rafi, J.M.; Ullan, M.

2006-01-01

A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was V FD =41±3 V, while the leakage current density for the microstrip devices at V FD +20 V was 400 nA/cm 2

Development of a Test System for the Quality Assurance of Silicon Microstrip Detectors for the Inner Tracking System of the CMS Experiment

CERN Document Server

Axer, Markus

2003-01-01

The inner tracking system of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) which is being built at the European Laboratory for Particle Physics CERN (Geneva, Switzerland) will be equipped with two different technologies of silicon detectors. While the innermost tracker will be composed of silicon pixel detectors, silicon microstrip detectors are envisaged for the outer tracker architecture. The silicon microstrip tracker will house about 15,000 single detector modules each composed of a set of silicon sensors, the readout electronics (front end hybrid), and a support frame. It will provide a total active area of 198 m2 and ten million analogue channels read out at the collider frequency of 40 MHz. This large number of modules to be produced and integrated into the tracking system is an unprecedented challenge involving industrial companies and various research institutes from many different countries. This thesis deals with the physics of silicon sensors and the preparation of ...

The silicon microstrip sensors of the ATLAS semiconductor tracker

Energy Technology Data Exchange (ETDEWEB)

ATLAS SCT Collaboration; Spieler, Helmuth G.

2007-04-13

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

The silicon microstrip sensors of the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

ATLAS SCT Collaboration; Spieler, Helmuth G.

2007-01-01

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS

Silicon microstrip detectors on 6'' technology

CERN Document Server

Bölla, G; Günther, M; Martignon, G; Bacchetta, N; Bisello, D; Leonardi, G L; Lucas, T; Wilburn, C

1999-01-01

The fabrication of microstrip detectors on 4'' high-resistivity wafers that allow for a maximum workable area of about 42 cm sup 2 has been well established. Using 6'' wafers the workable area increases up to 100 cm sup 2 (more than twice the area of a 4'' wafer) allowing a larger number of detectors to be processed at the same time on the same wafer resulting in a sizable reduction of cost. After a prototyping stage, the CDF silicon tracker upgrade is now receiving final production sensors from Micron Semiconductor Ltd. The performance of double-sided single-metal small stereo angle sensors for the CDF SVXII and ISL detectors has been studied. Results include probe station measurements and test beam results. The problems encountered from prototyping to the final devices are described. A brief overview of the response of the sensors to irradiation with gamma-rays and p sup + up to a dose of 0.5 Mrad (well above the doses expected during Run II of the Tevatron) is included. (author)

An X-ray imager based on silicon microstrip detector and coded mask

International Nuclear Information System (INIS)

Del Monte, E.; Costa, E.; Di Persio, G.; Donnarumma, I.; Evangelista, Y.; Feroci, M.; Frutti, M.; Lapshov, I.; Lazzarotto, F.; Mastropietro, M.; Morelli, E.; Pacciani, L.; Porrovecchio, G.; Rapisarda, M.; Rubini, A.; Soffitta, P.; Tavani, M.; Argan, A.

2007-01-01

SuperAGILE is the X-ray monitor of AGILE, a satellite mission for gamma-ray astronomy, and it is the first X-ray imaging instrument based on the technology of the silicon microstrip detectors combined with a coded aperture imaging technique. The SuperAGILE detection plane is composed of four 1-D silicon microstrip detector modules, mechanically coupled to tungsten coded mask units. The detector strips are separately and individually connected to the input analogue channels of the front-end electronics, composed of low-noise and low-power consumption VLSI ASIC chips. SuperAGILE can produce 1-D images with 6 arcmin angular resolution and ∼2-3 arcmin localisation capability, for intense sources, in a field of view composed of two orthogonal areas of 107 deg. x 68 deg. The time resolution is 2 μs, the overall dead time is ∼5 μs and the electronic noise is ∼7.5 keV full-width at half-maximum. The resulting instrument is very compact (40x40x14 cm 3 ), light (10 kg) and has low power consumption (12 W). AGILE is a mission of the Agenzia Spaziale Italiana and its launch is planned in 2007 in a low equatorial Earth orbit. In this contribution we present SuperAGILE and discuss its performance and scientific objectives

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

A radiographic imaging system based upon a 2-D silicon microstrip sensor

CERN Document Server

Papanestis, A; Corrin, E; Raymond, M; Hall, G; Triantis, F A; Manthos, N; Evagelou, I; Van den Stelt, P; Tarrant, T; Speller, R D; Royle, G F

2000-01-01

A high resolution, direct-digital detector system based upon a 2-D silicon microstrip sensor has been designed, built and is undergoing evaluation for applications in dentistry and mammography. The sensor parameters and image requirements were selected using Monte Carlo simulations. Sensors selected for evaluation have a strip pitch of 50mum on the p-side and 80mum on the n-side. Front-end electronics and data acquisition are based on the APV6 chip and were adapted from systems used at CERN for high-energy physics experiments. The APV6 chip is not self-triggering so data acquisition is done at a fixed trigger rate. This paper describes the mammographic evaluation of the double sided microstrip sensor. Raw data correction procedures were implemented to remove the effects of dead strips and non-uniform response. Standard test objects (TORMAX) were used to determine limiting spatial resolution and detectability. MTFs were determined using the edge response. The results indicate that the spatial resolution of the...

Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

International Nuclear Information System (INIS)

Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

2014-01-01

This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2017-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

Design, characterization and beam test performance of different silicon microstrip detector geometries

International Nuclear Information System (INIS)

Catacchini, E.; Ciampolini, L.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1998-01-01

During the last few years a large number of silicon microstrip detectors has been especially designed and tested in order to study and optimize the performances of the tracking devices to be used in the forward-backward part of the CMS (technical proposal, CERN/LHCC 94-38 LHCC/Pl, 15 December 1994) experiment. Both single and double sided silicon detectors of a trapezoidal ('wedge') shape and with different strip configurations, including prototypes produced with double metal technology, were characterized in the laboratory and tested using high-energy beams. Furthermore, due to the high-radiation environment where the detectors should operate, particular care was devoted to the study of the characteristics of heavily irradiated detectors. The main results of detector performances (charge response, signal-to-noise ratio, spatial resolution etc.) will be reviewed and discussed. (author)

Electrical production testing of the D0 Silicon microstrip tracker detector modules

Energy Technology Data Exchange (ETDEWEB)

D0, SMT Production Testing Group; /Fermilab

2006-03-01

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

CERN Document Server

Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

2007-01-01

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

CERN Document Server

Pöttgens, Michael

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

Optically controlled photonic bandgap structures for microstrip circuits

International Nuclear Information System (INIS)

Cadman, Darren Arthur

2003-01-01

This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

International Nuclear Information System (INIS)

Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

2014-01-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

Microstrip silicon detectors of the monitoring and triggering systems in the E-161 experiment

International Nuclear Information System (INIS)

Bogolyubskij, M.Yu.; Kurchaninov, L.L.; Moiseev, A.M.; Semenov, P.A.; Leflat, A.K.; Sekhniaidze, G.G.

1991-01-01

A monitoring and triggering system based on microstrip silicon detectors (MSD) and fast-response low-noise electronics with the number of the readout channels equal to 896, is described. The PMS noise is ENC=25x10 3 e - with the signal integration time of 50 ns. The probability of registering a noise pulse by one channel during data readout cycle is not more than 2.5x10 -6 . The time resolution (FWHM) is (16±3) ns. 17 refs.; 7 figs

Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

CERN Document Server

Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

2014-01-01

This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

The charge collection in single side silicon microstrip detectors

CERN Document Server

Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

2003-01-01

The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

Construction of the new silicon microstrips tracker for the Phase-II ATLAS detector

CERN Document Server

Liang, Zhijun; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The design of the ATLAS Upgrade inner tracker (ITk) has already been defined. It consists of several layers of silicon particle detectors. The innermost layers will be composed of silicon pixel sensors, and the outer layers will consist of silicon microstrip sensors. This paper will focus on the latest research and development act...

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

International Nuclear Information System (INIS)

Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

1996-01-01

The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

A silicon microstrip detector in a magnetic spectrometer for high-resolution electron scattering experiments at the S-DALINAC

International Nuclear Information System (INIS)

Lenhardt, A.W.; Bonnes, U.; Burda, O.; Neumann-Cosel, P. von; Platz, M.; Richter, A.; Watzlawik, S.

2006-01-01

A silicon microstrip detector was developed as focal plane detector of the 169.7 deg. magic angle double-focussing spectrometer at the superconducting Darmstadt electron linear accelerator (S-DALINAC). It allows experiments with minimum ionizing electrons at data rates up to 100 kHz, utilizing the maximum resolution of the spectrometer achievable in dispersion-matching mode

Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiaguo; Klanner, Robert; Fretwurst, Eckhart [Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 (Germany)

2010-07-01

As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p{sup +} on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.

Recent results on the development of radiation-hard diamond detectors

CERN Document Server

Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

1999-01-01

Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2018-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

ATLAS irradiation studies of n-in-n and p-in-n silicon microstrip detectors

CERN Document Server

Allport, P P; Buttar, C M; Carter, J; Drage, L M; Ferrère, D; Morgan, D; Riedler, P; Robinson, D

1999-01-01

Prior to the module production of the ATLAS silicon microstrip tracker for the barrel and the forward wheels, the characterisation of full-size prototype silicon detectors after radiation to fluences corresponding to 10 years of ATLAS operation is required. The behaviour of p-in-n and n-in-n detectors produced by several manufacturers before and after irradiation to a fluence of 3*10/sup 14/ protons/cm/sup 2/ at the CERN PS facility is discussed. This article summarises some recent results from the ATLAS SCT collaboration. The measurements of leakage current, full depletion voltage, signal-to-noise ratio and charge collection efficiency are presented. Despite the better efficiency performance of n-in-n detectors below depletion, the collaboration chose the p-in-n technology due to its simpler and less costly production since good charge collection efficiencies were achieved at the desired maximum bias voltage. (14 refs).

Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

CERN Document Server

Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

2004-01-01

Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Study of silicon microstrips detector quantum efficiency using mathematical simulation

International Nuclear Information System (INIS)

Leyva Pernia, Diana; Cabal Rodriguez, Ana Ester; Pinnera Hernandez, Ibrahin; Fabelo, Antonio Leyva; Abreu Alfonso, Yamiel; Cruz Inclan, Carlos M.

2011-01-01

The paper shows the results from the application of mathematical simulation to study the quantum efficiency of a microstrips crystalline silicon detector, intended for medical imaging and the development of other applications such as authentication and dating of cultural heritage. The effects on the quantum efficiency of some parameters of the system, such as the detector-source geometry, X rays energy and detector dead zone thickness, were evaluated. The simulation results were compared with the theoretical prediction and experimental available data, resulting in a proper correspondence. It was concluded that the use of frontal configuration for incident energies lower than 17 keV is more efficient, however the use of the edge-on configuration for applications requiring the detection of energy above this value is recommended. It was also found that the reduction of the detector dead zone led to a considerable increase in quantum efficiency for any energy value in the interval from 5 to 100 keV.(author)

FILTRES: a 128 channels VLSI mixed front-end readout electronic development for microstrip detectors

International Nuclear Information System (INIS)

Anstotz, F.; Hu, Y.; Michel, J.; Sohler, J.L.; Lachartre, D.

1998-01-01

We present a VLSI digital-analog readout electronic chain for silicon microstrip detectors. The characteristics of this circuit have been optimized for the high resolution tracker of the CERN CMS experiment. This chip consists of 128 channels at 50 μm pitch. Each channel is composed by a charge amplifier, a CR-RC shaper, an analog memory, an analog processor, an output FIFO read out serially by a multiplexer. This chip has been processed in the radiation hard technology DMILL. This paper describes the architecture of the circuit and presents test results of the 128 channel full chain chip. (orig.)

Silicon microstrip detector development in the Institute for High Energy Physics Zeuthen, GDR

International Nuclear Information System (INIS)

Lange, W.; Nowak, W.D.; Truetzschler, K.

1990-01-01

This paper reports that in regard of the growing interest to study short living particles demanding for high resolution vertex detectors the authors started to build Si microstrip detectors. The first detector generation was characterized by a small area of silicon and a readout via printed circuit board fan out. Now they can assemble detectors with larger areas and VLSI readout. A special cleanroom has been built. Equipment and tools necessary are available. Silicon wafers and thick film hybrid circuits are fabricated under collaboration by the GDR industry. Applications of their detectors were several test-runs at CERN to calibrate the L3 time expansion chamber (TEC) and the L3 muon chambers. A 10-layer telescope is designed now and it is planned to calibrate a high resolution scintillation fiber target. Future applications will be high resolution vertex detectors, e.g. L3 upgrading (LEP, CERN) or KEDR (VEPP-5, Novosibirsk). Further investigations will concern AC coupled strip detectors (single and double sided) and pixel and/or pad detectors

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

International Nuclear Information System (INIS)

Poettgens, M.

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Poettgens, M.

2007-11-22

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC)

International Nuclear Information System (INIS)

Moreau, St.

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Commissioning and first data with the ATLAS silicon microstrip tracker

International Nuclear Information System (INIS)

Rohne, Ole Myren

2010-01-01

The ATLAS experiment at the CERN large hadron collider (LHC) has started taking data this autumn with the inauguration of the LHC. The semiconductor tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The completed SCT has recently been installed inside the ATLAS experimental hall. Quick tests were performed last year to verify the connectivity of the electrical and optical services. Problems observed with the heaters for the evaporative cooling system have been resolved. This has enabled extended operation of the full detector under realistic conditions. Calibration data has been taken and analysed to determine the noise performance of the system. In addition, extensive commissioning with cosmic ray events has been performed. The cosmic muon data has been used to align the detector, to check the timing of the front-end electronics as well as to measure the hit efficiency of modules. The current status of the SCT will be reviewed, including results from the latest data-taking periods in autumn 2008, and from the detector alignment. We will report on the commissioning of the detector, including overviews on services, connectivity and observed problems. Particular emphasis will also be placed on the SCT data taken in the latest running period with the entire ATLAS detector participating. The SCT commissioning and running experience will then be used to extract valuable lessons for future silicon strip detector projects.

Scientific performances of the XAA1.2 front-end chip for silicon microstrip detectors

International Nuclear Information System (INIS)

Del Monte, Ettore; Soffitta, Paolo; Morelli, Ennio; Pacciani, Luigi; Porrovecchio, Geiland; Rubini, Alda; Uberti, Olga; Costa, Enrico; Di Persio, Giuseppe; Donnarumma, Immacolata; Evangelista, Yuri; Feroci, Marco; Lazzarotto, Francesco; Mastropietro, Marcello; Rapisarda, Massimo

2007-01-01

The XAA1.2 is a custom ASIC chip for silicon microstrip detectors adapted by Ideas for the SuperAGILE instrument on board the AGILE space mission. The chip is equipped with 128 input channels, each one containing a charge preamplifier, shaper, peak detector and stretcher. The most important features of the ASIC are the extended linearity, low noise and low power consumption. The XAA1.2 underwent extensive laboratory testing in order to study its commandability and functionality and evaluate its scientific performances. In this paper we describe the XAA1.2 features, report the laboratory measurements and discuss the results emphasizing the scientific performances in the context of the SuperAGILE front-end electronics

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Test of the CMS microstrip silicon tracker readout and control system

CERN Document Server

Zghiche, A

2001-01-01

The Microstrip Silicon tracker of the CMS detector is designed to provide robust particle tracking and vertex reconstruction within a strong magnetic field in the high luminosity environment of the LHC. The Tracker readout system employs Front-End Driver cards to digitize and buffer the analogue data arriving via optical links from on detector pipeline chips. The control chain of the front-end electronic is built to operate via optical fibers in order to shield the communications from the outside noise. Components close to the final design have been assembled to be tested in the X5 beam area at CERN where a dedicated 25 ns temporal structure beam has been made available by the SPS. This paper describes the hardware and the software developed for readout and control of data acquired by the front-end electronics operating at 40 MHz, Some preliminary results of the tests performed in the 25 ns beam are also given. (8 refs).

A possible role for silicon microstrip detectors in nuclear medicine Compton imaging of positron emitters

CERN Document Server

Scannavini, M G; Royle, G J; Cullum, I; Raymond, M; Hall, G; Iles, G

2002-01-01

Collimation of gamma-rays based on Compton scatter could provide in principle high resolution and high sensitivity, thus becoming an advantageous method for the imaging of radioisotopes of clinical interest. A small laboratory prototype of a Compton camera is being constructed in order to initiate studies aimed at assessing the feasibility of Compton imaging of positron emitters. The design of the camera is based on the use of a silicon collimator consisting of a stack of double-sided, AC-coupled microstrip detectors (area 6x6 cm sup 2 , 500 mu m thickness, 128 channels/side). Two APV6 chips are employed for signal readout on opposite planes of each detector. This work presents the first results on the noise performance of the silicon strip detectors. Measurements of the electrical characteristics of the detector are also reported. On the basis of the measured noise, an angular resolution of approximately 5 deg. is predicted for the Compton collimator.

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

The CMS silicon strip tracker

International Nuclear Information System (INIS)

Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

1999-01-01

The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Characterization of silicon microstrip sensors with a pulsed infrared laser system for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Pradeep [Goethe Univ., Frankfurt (Germany); GSI (Germany); Eschke, Juergen [GSI (Germany); FAIR (Germany); Collaboration: CBM-Collaboration

2014-07-01

The Silicon Tracking System (STS) for the Compressed Baryonic Matter (CBM) experiment at FAIR will comprise more than 1200 double-sided silicon microstrip sensors. For the quality assurance of the prototype sensors a laser test system has been built up. The aim of the sensor scans with the pulsed infrared laser system is to determine the charge sharing between strips and to measure the uniformity of the sensor response over the whole active area. The laser system measures the sensor response in an automatized procedure at several thousand positions across the sensor with focused infrared laser light (σ∼15 μm, λ=1060 nm). The duration (5 ns) and power (few mW) of the laser pulses are selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24k electrons, which is similar to the charge created by minimum ionizing particles in these sensors. Results from the characterization of monolithic active pixel sensors, to understand the spot-size of the laser, and laser scans for different sensors are presented.

A VLSI front-end circuit for microstrip silicon detectors for medical imaging applications

International Nuclear Information System (INIS)

Beccherle, R.; Cisternino, A.; Guerra, A. Del; Folli, M.; Marchesini, R.; Bisogni, M.G.; Ceccopieri, A.; Rosso, V.; Stefanini, A.; Tripiccione, R.; Kipnis, I.

1999-01-01

An analog CMOS-Integrated Circuit has been developed as Front-End for a double-sided microstrip silicon detector. The IC processes and discriminates signals in the 5-30 keV energy range. Main features are low noise and precise timing information. Low noise is achieved by optimizing the cascoded integrator with the 8 pF detector capacitance and by using an inherently low noise 1.2 μm CMOS technology. Timing information is provided by a double discriminator architecture. The output of the circuit is a digital pulse. The leading edge is determined by a fixed threshold discriminator, while the trailing edge is provided by a zero crossing discriminator. In this paper we first describe the architecture of the Front-End chip. We then present the performance of the chip prototype in terms of noise, minimum discrimination threshold and time resolution

Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC

CERN Document Server

Barth, C; Bloch, I.; Bögelspacher, F.; de Boer, W.; Daniels, M.; Dierlamm, A.; Eber, R.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Erfle, J.; Feld, L.; Garutti, E.; Gregor, I. -M.; Guthoff, M.; Hartmann, F.; Hauser, M.; Husemann, U.; Jakobs, K.; Junkes, A.; Karpinski, W.; Klein, K.; Kuehn, S.; Lacker, H.; Mahboubi, K.; Müller, Th.; Mussgiller, A.; Nürnberg, A.; Parzefall, U.; Poehlsen, T.; Poley, L.; Preuten, M.; Rehnisch, L.; Sammet, J.; Schleper, P.; Schuwalow, S.; Sperlich, D.; Stanitzki, M.; Steinbrück, G.; Wlochal, M.

2016-01-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Phys...

The depletion properties of silicon microstrip detectors with variable strip pitch

International Nuclear Information System (INIS)

Krizmanic, J.F.

1994-01-01

We have investigated the depletion properties of trapezoidal shaped silicon microstrip detectors which have variable strip pitch. Four types of detectors were examined: three detectors have constant strip width and a fourth has a varying strip width. The detectors are single sided with readout performed via p + strips. The depletion properties of the devices were measured using two different methods. The first used capacitance versus voltage measurements, while the second used a 1060 nm wavelength laser coupled to a single mode fiber with a mode field diameter less than 10 μm. The small laser spot size allowed for the depletion depth to be measured in a localized area of the detector. The laser induced charge on an electrode was measured as a function of reverse bias voltage using a sensitive charge preamplifier. The depletion voltages of the detectors demonstrate a strong dependence upon the ratio of strip width to strip pitch. Moreover, these measurements show that a large value of this ratio yields a lower depletion voltage and vice versa. (orig.)

Towards Gotthard-II: development of a silicon microstrip detector for the European X-ray Free-Electron Laser

Science.gov (United States)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2018-01-01

Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversion gain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II.

Beam splash effects on ATLAS silicon microstrip detectors evaluated using 1-w Nd YAG laser

CERN Document Server

Hara, K; Kohriki, T; Kuwano, T; Moorhead, G F; Terada, S; Unno, Y

2005-01-01

On an incident of accelerator beam loss, the tracking detector located close to the beam line is subjected to receive intensive radiation in a short period. We used a 1-W focused Nd: YAG laser and simulated the effects on the ATLAS microstrip detector. The laser corresponds to intensity of up to 1 multiplied by 109mips/pulse with a pulse width of about 10 ns. We observed breaks on Al strips on extreme conditions, depending on the laser intensity and bias voltage applied to the silicon sensor. The break can be interpreted as the oxide breakdown due to a large voltage locally created across the oxide by the intensive signal charges. The robustness of the Semiconductor Tracker (SCT) module including readout ASICs is also evaluated.

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Science.gov (United States)

Bacchetta, N.; Bisello, D.; Canali, C.; Fuochi, P. G.; Gotra, Y.; Paccagnella, A.; Verzellesi, G.

1993-12-01

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease.

Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

International Nuclear Information System (INIS)

Basfar, A.A.

1995-01-01

This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Radiation hardness of diamond and silicon sensors compared

CERN Document Server

de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

2007-01-01

The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

An Uncoventional Approach for a Straw Tube-Microstrip Detector

OpenAIRE

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.

2004-01-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported on as well.

Hardness and thermal stability of cubic silicon nitride

DEFF Research Database (Denmark)

Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

2001-01-01

The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

The LHCb Silicon Tracker

Energy Technology Data Exchange (ETDEWEB)

Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

2016-09-21

The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

A Novel Approach for an Integrated Straw Tube-Microstrip Detector

Science.gov (United States)

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.; Paolozzi, A.; Passamonti, L.; Pierluigi, D.; Pucci, C.; Russo, A.; Saviano, G.; Casali, F.; Bettuzzi, M.; Bianconi, D.; Baruffaldi, F.; Perilli, E.; Massa, F.

2006-06-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell/spl reg/ lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported as well.

Production of ALICE microstrip detectors at ITC-irst

International Nuclear Information System (INIS)

Gregori, Paolo; Bellutti, Pierluigi; Boscardin, Maurizio; Collini, Amos; Dalla Betta, Gian-Franco; Pucker, Georg; Zorzi, Nicola

2007-01-01

We report on the results from the production of 600 double-sided silicon microstrip detectors for the ALICE experiment. We present the fabrication process and some selected results from the electrical characterization of detectors and test structures. The large amount of experimental data allowed a statistically relevant analysis to be performed. The main technological aspects related to production yield optimization will also be addressed

A Novel Approach for an Integrated Straw tube-Microstrip Detector

OpenAIRE

Basile, E.; Bellucci, F.; Benussi, L.; Bertani, M.; Bianco, S.; Caponero, M. A.; Colonna, D.; Di Falco, F.; Fabbri, F. L.; Felli, F.; Giardoni, M.; La Monaca, A.; Mensitieri, G.; Ortenzi, B.; Pallotta, M.

2005-01-01

We report on a novel concept of silicon microstrips and straw tubes detector, where integration is accomplished by a straw module with straws not subjected to mechanical tension in a Rohacell $^{\\circledR}$ lattice and carbon fiber reinforced plastic shell. Results on mechanical and test beam performances are reported on as well.

P-spray implant optimization for the fabrication of n-in-p microstrip detectors

International Nuclear Information System (INIS)

Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Campabadal, Francesca; Rafi, Joan Marc; Ullan, Miguel

2007-01-01

This work reports on an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors. A thorough simulation process of the expected electrical performance of different p-spray technologies was carried out. The best technological options for the p-spray implantation were chosen for the fabrication of miniature n-in-p microstrip detectors on high resistivity FZ wafers at the IMB-CNM clean room. The main conclusions derived from the simulations, and the electrical performance of a sample of the fabricated devices is presented

Silicon tracker for the compressed baryonic matter experiment

Directory of Open Access Journals (Sweden)

M. S. Borysova

2008-12-01

Full Text Available Design of STS and module prototype of silicon micro-strip detector for particle momenta measurements with a resolution of around Δp/p ≈ 1 % are presented. Very high radiation level and inhomogeneous track distribution result in modular construction of the detector stations. The micro-strip detectors are planned to be read out with the help of СВМ-XYTER chip. The system requirements include radiation tolerant sensors with high spatial resolution and a fast readout compatible with high-level-only triggers. Concept of the silicon detection system and the R&D on micro-strip sensors as well as front-end electronics for the building blocks of the detector stations are discussed.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Hyperon production in proton-nucleus collisions at a center-of-mass energy of $\\sqrt(S_NN)=41.6 GeV$ at HERA-B and design of silicon microstrip detectors for tracking at LHCb

CERN Document Server

Agari, M

2006-01-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at ps = 41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland), and hyperons and their antiparticles were reconstructed from 113.5A.106 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, $d\\sigma /dp^{2}_{T}$ (for and) and rapidity, $d\\sigma /dy$ (for only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been desi...

Measurement of the Inclusive $b$-jet cross section in $p\\bar{p}$ collisions at CDF RunII and Development of silicon microstrip detectors for the ATLAS silicon tracker

Energy Technology Data Exchange (ETDEWEB)

D' Onofrio, Monica [Univ. of Geneva (Switzerland)

2005-01-01

In the past twenty years, the study of events with bottom quark has led to many important Tevatron results- as the discovery of the top quark- and it will be as well crucial at the LHC for the search of new physics phenomena. This analysis exploits the good tracking capabilities of the detector and relies on b-jet identification made by secondary vertex reconstruction. The study of the Inner Tracker system performance and in particular the Semi conductor Tracker (SCT), can be considered one of the fundamental issues in the construction of the apparatus. The second part of this thesis work reports some of the crucial tests performed during the development of the silicon microstrip detectors composing the SCT.

Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

International Nuclear Information System (INIS)

Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

2013-06-01

We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

RD50 recent results: Development of radiation hard sensors for SLHC

CERN Document Server

Macchiolo, Anna

2009-01-01

The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector designs (Device Engineering) as 3D sensors, thin sensors and n-in-p sensors. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) identification of defects responsible for long term annealing, (ii) charge collection efficiency of irradiated planar devices, in particular n-in-p microstrip detectors and epitaxial diodes, (iii) charge collection efficiency of double-type column 3D detectors, (iv) comparison of the performances of FZ and MCZ structures under mixed irradiation.

Silicon microstrip detectors in 3D technology for the sLHC

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-08-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10{sup 15}N{sub eq}/cm{sup 2}, hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Silicon microstrip detectors in 3D technology for the sLHC

International Nuclear Information System (INIS)

Parzefall, Ulrich; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor; Parkes, Chris; Pennicard, David; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10 15 N eq /cm 2 , hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

UV radiation hardness of silicon inversion layer solar cells

International Nuclear Information System (INIS)

Hezel, R.

1990-01-01

For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

International Nuclear Information System (INIS)

Casagrande, L.; Barnett, B.M.; Bartalina, P.

1999-01-01

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

CSIR Research Space (South Africa)

Adebiyia, DI

2016-06-01

Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

CBC2: A CMS microstrip readout ASIC with logic for track-trigger modules at HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Hall, G., E-mail: g.hall@imperial.ac.uk [Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Pesaresi, M.; Raymond, M. [Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Braga, D.; Jones, L.; Murray, P.; Prydderch, M. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 OQX (United Kingdom); Abbaneo, D.; Blanchot, G.; Honma, A.; Kovacs, M.; Vasey, F. [CERN, CH-1211, Geneva (Switzerland)

2014-11-21

The CBC2 is the latest version of the CMS Binary Chip ASIC for readout of the upgraded CMS Tracker at the High Luminosity LHC. It is designed in 130 nm CMOS with 254 input channels and will be bump-bonded to a substrate to which sensors will be wire-bonded. The CBC2 is designed to instrument double layer modules, consisting of two overlaid silicon microstrip sensors with aligned microstrips, in the outer tracker. It incorporates logic to identify L1 trigger primitives in the form of “stubs”: high transverse-momentum track candidates which are identified within the low momentum background by selecting correlated hits between two closely separated microstrip sensors. The first prototype modules have been assembled. The performance of the chip in recent laboratory tests is briefly reported and the status of module construction described.

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Radiation hardness properties of full-3D active edge silicon sensors

Czech Academy of Sciences Publication Activity Database

Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

2008-01-01

Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC

International Nuclear Information System (INIS)

Guedon, M.

2005-05-01

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Buytaert, J.; Chabaud, V.; Chochula, P.; Collins, P.; Dijkstra, H.; Niinikoski, T.O.; Lourenco, C.; Parkes, C.; Saladino, S.; Ruf, T.; Granata, V.; Pagano, S.; Vitobello, F.; Bell, W.; Bartalini, P.; Dormond, O.; Frei, R.; Casagrande, L.; Bowcock, T.; Barnett, I.B.M.; Da Via, C.; Konorov, I.; Paul, S.; Schmitt, L.; Ruggiero, G.; Stavitski, I.; Esposito, A.

2000-01-01

This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5x10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the 'Lazarus effect', can be related to similar recent observations on diode behaviour

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

The results of the irradiations of microstrip detectors for the ATLAS tracker (SCT)

International Nuclear Information System (INIS)

Dervan, P.J.

2003-01-01

The SemiConductor Tracker (SCT) of ATLAS will operate in the Large Hadron Collider (LHC) at CERN, which will reach luminosities of 10 34 cm 2 s -1 . Silicon single-sided microstrip detectors will be used for particle tracking. Due to the proximity to the beam, the silicon detectors need to withstand damage from ionising radiation (10 Mrad total dose) and from non-ionising radiation such as neutrons (2x10 14 1 MeV equivalent neutrons/cm 2 total fluence). The final characteristics of the silicon SCT detectors which are needed to operate under LHC conditions and the conclusions reached after various years of test irradiation studies will be reported. The integration and performance of these detectors in complete SCT modules is also discussed

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Short p-type silicon microstrip detectors in 3D-stc technology

Energy Technology Data Exchange (ETDEWEB)

Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

2008-10-21

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

International Nuclear Information System (INIS)

Ghosh, P.

2015-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

Foundations for microstrip circuit design

CERN Document Server

Edwards, Terry

2016-01-01

Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

2010-01-01

Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

CBC3: a CMS microstrip readout ASIC with logic for track-trigger modules at HL-LHC

CERN Document Server

Prydderch, Mark Lyndon; Bell, Stephen Jean-marc; Key-Charriere, M; Jones, Lawrence; Auzinger, Georg; Borg, Johan; Hall, Geoffrey; Pesaresi, Mark Franco; Raymond, David Mark; Uchida, Kirika; Goldstein, Joel; Seif El Nasr, Sarah

2018-01-01

The CBC3 is the latest version of the CMS Binary Chip ASIC for readout of the outer radial region of the upgraded CMS Tracker at HL-LHC. This 254-channel, 130nm CMOS ASIC is designed to be bump-bonded to a substrate to which sensors will be wire-bonded. It will instrument double-layer 2S-modules, consisting of two overlaid silicon microstrip sensors with aligned microstrips. On-chip logic identifies first level trigger primitives from high transverse-momentum tracks by selecting correlated hits in the two sensors. Delivered in late 2016, the CBC3 has been under test for several months, including X-ray irradiations and SEU testing. Results and performance are reported.

SuperAGILE: The hard X-ray imager for the AGILE space mission

International Nuclear Information System (INIS)

Feroci, M.; Costa, E.; Soffitta, P.; Del Monte, E.; Di Persio, G.; Donnarumma, I.; Evangelista, Y.; Frutti, M.; Lapshov, I.; Lazzarotto, F.; Mastropietro, M.; Morelli, E.; Pacciani, L.; Porrovecchio, G.; Rapisarda, M.; Rubini, A.; Tavani, M.; Argan, A.

2007-01-01

SuperAGILE is a coded mask experiment based on silicon microstrip detectors. It operates in the 15-45 keV nominal energy range, providing crossed one-dimensional images of the X-ray sky with an on-axis angular resolution of 6 arcmin, over a field of view in excess of 1 sr. It was designed as the hard X-ray monitor of the AGILE space mission, a small satellite of the Italian Space Agency devoted to image the gamma-ray sky in the 30 MeV-50 GeV energy band. The AGILE mission was launched in a low-earth orbit on 23rd April 2007. In this paper we describe the SuperAGILE experiment, its construction and test processes, and its performance before flight, based on the on-ground test and calibrations

Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

Czech Academy of Sciences Publication Activity Database

Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

2001-01-01

Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

Development and Evaluation of a Test System for the Quality Assurance during the Mass Production of Silicon Microstrip Detector Modules for the CMS Experiment

CERN Document Server

Franke, Torsten

2005-01-01

The Compact Muon Solenoid (CMS) is one of four large-scale experiments that is going to be installed at the Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). For CMS an inner tracking system entirely equipped with silicon microstrip detectors was chosen. With an active area of about 198 m2 it will be the largest tracking device of the world that was ever constructed using silicon sensors. The basic components in the construction of the tracking system are approximately 16,000 so-called modules, which are pre-assembled units consisting of the sensors, the readout electronics and a support structure. The module production is carried out by a cooperation of number of institutes and industrial companies. To ensure the operation of the modules within the harsh radiation environment extensive tests have to be performed on all components. An important contribution to the quality assurance of the modules is made by a test system of which all components were developed in Aachen. In ad...

Silicon microstrip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Masciocchi, S.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.S.; Timm, S.; Vorwalter, K.; Werding, R.

1995-01-01

A new silicon strip detector has been designed for the fixed target experiment WA89 at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into a FASTBUS memory. The detector provides a fast readout by offering zero-suppressed data extraction on the chip. The silicon counters are the largest detectors built on a monocrystal so far in order to achieve good transversal acceptance. Construction and performance during the 1993 data taking run are discussed. ((orig.))

Silicon Strip detectors for the ATLAS End-Cap Tracker at the HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00232570

Inside physics programme of the LHC different experiment upgrades are foreseen. After the phase-II upgrade of the ATLAS detector the luminosity will be increased up to 5-7.5x10E34 cm-2s-1. This will mean a considerable increase in the radiation levels, above 10E16 neq/cm2 in the inner regions. This thesis is focused on the development of silicon microstrip detectors enough radiation hard to cope with the particle fluence expected at the ATLAS detector during HL-LHC experiment. In particular on the electrical characterization of silicon sensors for the ATLAS End-Caps. Different mechanical and thermal tests are shown using a Petal core as well as the electrical characterization of the silicon sensors that will be used with the Petal structure. Charge collection efficiency studies are carried out on sensors with different irradiation fluences using the ALiBaVa system and two kinds of strips connection are also analized (DC and AC ganging) with a laser system. The Petalet project is presented and the electrical c...

Effect of different types of disinfection solution and aging on the hardness and colour stability of maxillofacial silicone elastomers.

Science.gov (United States)

Cevik, Pinar; Yildirim-Bicer, Arzu Z

2017-11-09

Understanding the effect of aging and different disinfecting agents on the physical properties of pigmented maxillofacial silicones may help eliminate the current uncertainty as to the best follow-up suggestions for the patients treated with silicone prostheses. One hundred fifty specimens (14 × 2 mm) were evaluated for colour and 75 specimens (30 × 10 mm) for hardness (total, 225 specimens). Five specimens were used for hardness testing in each disinfecting solution while 10 silicone specimens were used for colour evaluation. The samples were separated into 5 groups and the initial hardness and colour evaluations were performed and placed in disinfectant solution (neutral soap, effervescent tablet, 0.2% chlorhexidine, 4% chlorhexidine, sodium hypochlorite). A second set of colour and hardness measurements was taken after 48 hours of disinfection and 1,008 hours of artificial aging in a QUV-accelerated weathering tester. Two-way and 1-way analysis of variance with Tukey tests and paired t-test were used for statistical analysis (α = 0.05). Before artificial aging, the hardness value of the red pigment group was found to be significantly lower than that of the brown pigment group. After aging, the lowest Shore A value was seen in the neutral soap group, while the highest was seen in the effervescent tablet. Based on the results of this study, chlorohexidine 0.2% was found to be most suitable agent for disinfection of the prostheses. Washing with neutral soap caused loss of pigment from the surface of the silicones. Sodium hypochlorite was found to have a colour-fading effect on silicone specimens.

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Microstrip silicon detectors in a bent crystal based collimation system: The UA9 experiment

International Nuclear Information System (INIS)

Bolognini, D.

2010-01-01

In a hadron accelerator like Lhc, a collimation system needs to be developed to protect the accelerator itself from the beam loss damage, increasing the beam luminosity. At present, a classical robust multi-stage collimation system (based on amorphous jaws) allows to protect Lhc, but limits the luminosity to the 40% of the nominal value. In order to solve this problem, a series of low-impedance collimation systems is being developed for the second Lhc collimation phase: among these, a key role could be played by bent crystals. In a bent crystal, in fact, charged particles can be deviated in a given direction with a high efficiency, reducing the impedance and increasing the luminosity. After the satisfactory results on extracted beams, it was decided to test bent crystals on a circular accelerator (the Super Proton Synchrotron Sps at CERN): the UA9 experiment was born. In order to qualify the crystal behavior, a tracking system has been developed: the system is based on microstrip silicon detectors readout by self-triggering ASICs with a spatial resolution of the order of 5 μm; the system, completely remotely controlled and based on the optical fiber transmission, would be able to measure the beam halo phase space x - x 1 . This paper, after a brief introduction of the UA9 experiment, will describe the tracking system and the first results obtained in the commissioning phase and data takings with a detector prototype.

Hyperon production in proton-nucleus collisions at a center-of-mass energy of √(sNN) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

International Nuclear Information System (INIS)

Agari, Michaela

2006-01-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at √(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). Λ, Ξ and Ω hyperons and their antiparticles were reconstructed from 113.5 . 10 6 inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, dσ/dp T 2 (for Λ and Ξ) and rapidity, dσ/dy (for Λ only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

CMS silicon tracker developments

International Nuclear Information System (INIS)

Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

2002-01-01

The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

Radiation hard silicon sensors for the CMS tracker upgrade

CERN Document Server

Pohlsen, Thomas

2013-01-01

At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

The LHCb Silicon Tracker, first operational results

CERN Document Server

Esperante, D; Adeva, B; Gallas, A; Pérez Trigo, E; Rodríguez Pérez, P; Pazos Álvarez, A; Saborido, J; Vàzquez, P; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; de Cian, M; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The Large Hadron Collider beauty (LHCb) experiment at CERN (Conseil Européen pour la Recherche Nucléaire) is designed to perform precision measurements of b quark decays. The LHCb Silicon Tracker consists of two sub-detectors, the Tracker Turicensis and the Inner Tracker, which are built from silicon micro-strip technology. First performance results of both detectors using data from Large Hadron Collider synchronization tests are presented.

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC); Conception d'un algorithme de reconstruction de vertex pour les donnees de CMS. Etude de detecteurs gazeux (MSGC) et silicium a micropistes

Energy Technology Data Exchange (ETDEWEB)

Moreau, St

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Design and characterization of integrated front-end transistors in a micro-strip detector technology

International Nuclear Information System (INIS)

Simi, G.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Morganti, M.; U. Pignatel, G.; Ratti, L.; Re, V.; Rizzo, G.; Speziali, V.; Zorzi, N.

2002-01-01

We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures

Belle II silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2016-09-21

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Some Recent Developments of Microstrip Antenna

Directory of Open Access Journals (Sweden)

Yong Liu

2012-01-01

Full Text Available Although the microstrip antenna has been extensively studied in the past few decades as one of the standard planar antennas, it still has a huge potential for further developments. The paper suggests three areas for further research based on our previous works on microstrip antenna elements and arrays. One is exploring the variety of microstrip antenna topologies to meet the desired requirement such as ultrawide band (UWB, high gain, miniaturization, circular polarization, multipolarized, and so on. Another is to apply microstrip antenna to form composite antenna which is more potent than the individual antenna. The last is growing towards highly integration of antenna/array and feeding network or operating at relatively high frequencies, like sub-millimeter wave or terahertz (THz wave regime, by using the advanced machining techniques. To support our points of view, some examples of antennas developed in our group are presented and discussed.

Radiation damage of silicon structures with electrons of 900 MeV

CERN Document Server

Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

2002-01-01

We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

Feasibility studies of microelectrode silicon detectors with integrated electronics

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

2002-01-01

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

International Nuclear Information System (INIS)

Clement, J.J.

1980-01-01

The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

The ARGUS silicon vertex detector

International Nuclear Information System (INIS)

Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

1994-01-01

A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

Hyperon production in proton-nucleus collisions at a center-of-mass energy of {radical}(s{sub NN}) = 41.6 GeV at HERA-B and design of silicon microstrip detectors for tracking at LHCb

Energy Technology Data Exchange (ETDEWEB)

Agari, Michaela

2006-07-01

The topics of this thesis are the measurements of hyperon production in protonnucleus collisions at {radical}(s)=41.6 GeV with the Hera-B detector located at DESY, Hamburg (Germany), and the design of silicon microstrip sensors for the LHCb experiment at CERN, Geneva (Switzerland). {lambda}, {xi} and {omega} hyperons and their antiparticles were reconstructed from 113.5 . 10{sup 6} inelastic collisions of protons with fixed carbon, titanium and tungsten targets. With these samples, antiparticle-to-particle ratios, cross sections integrated for the accessible kinematic region of Hera-B and single differential cross sections as function of transverse momentum, d{sigma}/dp{sub T}{sup 2} (for {lambda} and {xi}) and rapidity, d{sigma}/dy (for {lambda} only), have been been measured as well as the dependence of these quantities on the atomic number of the target nucleus, as parameterized using the Glauber model. The obtained ratios follow the same trend as found for the energy dependence of measurements from nucleus-nucleus collisions. Silicon microstrip sensors have been designed for the tracking system of the LHCb detector. Evaluating the performance in beam tests at CERN, the strip geometry and sensor thickness were varied optimizing for a large signal-to-noise ratio, a small number of read-out channels and a low occupancy. The detector is currently being built to be operational for first proton-proton collisions in autumn 2007. (orig.)

Developing a fast simulator for irradiated silicon detectors

CERN Document Server

Diez Gonzalez-Pardo, Alvaro

2015-01-01

Simulation software for irradiated silicon detectors has been developed on the basis of an already existing C++ simulation software called TRACS[1]. This software has been already proven useful in understanding non-irradiated silicon diodes and microstrips. In addition a wide variety of user-focus features has been implemented to improve on TRACS flexibility. Such features include an interface to allow any program to leverage TRACS functionalities, a configuration file and improved documentation.

BI-ground microstrip array coil vs. conventional microstrip array coil for mouse imaging at 7 tesla

Science.gov (United States)

Hernández, Ricardo; Terrones, M. A. López; Jakob, P. M.

2012-10-01

At high field strengths, the need for more efficient high frequency coils has grown. Since the radiation losses and the interaction between coil and sample increase proportionally to field strength, the quality factor (Q) and the sensitivity of the coil decrease as consequence of these negative effects. Since Zhang et al proposed in 2001 a new surface coil based on the microstrip transmission line for high frequency, different Tx-Rx phased arrays based on this concept have been already introduced in animal and whole body systems at high field strengths, each of them with different modifications in order to get better field homogeneity, SNR or isolation between coil elements in the array. All these arrays for animals systems have been built for rat imaging. One of these modifications is called BI-Ground Microstrip Array Coil (BIGMAC). The implementation of a smaller two-channel BIGMAC design for mouse imaging is studied and its performance compared to a two-channel conventional Microstrip array at 7 Tesla, the higher isolation by using BIGMAC elements in comparison with conventional Microstrip elements is shown in this work.

The solenoidal detector collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems (STS) will be fundamental components of the tracking systems for both planned major SSC experiments. The STS is physically a small part of the central tracking system and the calorimeter of the detector being proposed by the Solenoidal Detector Collaboration (SDC). Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. The STS will consist of silicon microstrip detectors and possibly silicon pixel detectors. The other two components are an outer barrel tracker, which will consist of straw tubes or scintillating fibers; and an outer intermediate angle tracker, which will consist of gas microstrips. The components are designed to work as an integrated system. Each componenet has specific strengths, but is individually incapable of providing the overall performance required by the physics goals of the SSC. The large particle fluxes, the short times between beam crossing, the high channel count, and the required very high position measurement accuracy pose challenging problems that must be solved. Furthermore, to avoid degrading the measurements, the solutions must be achieved using only a minimal amount of material. An additional constraint is that only low-Z materials are allowed. If that were not difficlut enough, the solutions must also be affordable

The BaBar silicon vertex tracker, performance and running experience

CERN Document Server

Re, V; Bozzi, C; Carassiti, V; Cotta-Ramusino, A; Piemontese, L; Breon, A B; Brown, D; Clark, A R; Goozen, F; Hernikl, C; Kerth, L T; Gritsan, A; Lynch, G; Perazzo, A; Roe, N A; Zizka, G; Roberts, D; Schieck, J; Brenna, E; Citterio, M; Lanni, F; Palombo, F; Ratti, L; Manfredi, P F; Angelini, C; Batignani, G; Bettarini, S; Bondioli, M; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Forti, F; Gagliardi, D J; Giorgi, M A; Lusiani, A; Mammini, P; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Sandrelli, F; Simi, G; Triggiani, G; Walsh, J; Burchat, Patricia R; Cheng, C; Kirkby, D; Meyer, T I; Roat, C; Bóna, M; Bianchi, F; Gamba, D; Trapani, P; Bosisio, L; Della Ricca, G; Dittongo, S; Lanceri, L; Pompili, A; Poropat, P; Rashevskaia, I; Vuagnin, G; Burke, S; Callahan, D; Campagnari, C; Dahmes, B; Hale, D; Hart, P; Kuznetsova, N; Kyre, S; Levy, S; Long, O; May, J; Mazur, M; Richman, J; Verkerke, W; Witherell, M; Beringer, J; Eisner, A M; Frey, A; Grillo, A A; Grothe, M; Johnson, R P; Kröger, W; Lockman, W S; Pulliam, T; Rowe, W; Schmitz, R E; Seiden, A; Spencer, E N; Turri, M; Walkowiak, W; Wilder, M; Wilson, M; Charles, E; Elmer, P; Nielsen, J; Orejudos, W; Scott, I; Zobernig, H

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies.

The BaBar silicon vertex tracker, performance and running experience

International Nuclear Information System (INIS)

Re, V.; Borean, C.; Bozzi, C.; Carassiti, V.; Cotta Ramusino, A.; Piemontese, L.; Breon, A.B.; Brown, D.; Clark, A.R.; Goozen, F.; Hernikl, C.; Kerth, L.T.; Gritsan, A.; Lynch, G.; Perazzo, A.; Roe, N.A.; Zizka, G.; Roberts, D.; Schieck, J.; Brenna, E.; Citterio, M.; Lanni, F.; Palombo, F.; Ratti, L.; Manfredi, P.F.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ceccanti, M.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Neri, N.; Paoloni, E.; Profeti, A.; Rama, M.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Walsh, J.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.I.; Roat, C.; Bona, M.; Bianchi, F.; Gamba, D.; Trapani, P.; Bosisio, L.; Della Ricca, G.; Dittongo, S.; Lanceri, L.; Pompili, A.; Poropat, P.; Rashevskaia, I.; Vuagnin, G.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Hale, D.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Mazur, M.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.A.; Grothe, M.; Johnson, R.P.; Kroeger, W.; Lockman, W.S.; Pulliam, T.; Rowe, W.; Schmitz, R.E.; Seiden, A.; Spencer, E.N.; Turri, M.; Walkowiak, W.; Wilder, M.; Wilson, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Zobernig, H.

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies

Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

CERN Document Server

AUTHOR|(CDS)2089774; Troska, Jan

Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

Control and data acquisition electronics for the CDF Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

International Nuclear Information System (INIS)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

Control and data acquisition electronics for the CDF silicon vertex detector

International Nuclear Information System (INIS)

urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1992-01-01

This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

Micro-strip sensors based on CVD diamond

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

2000-10-11

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD Diamond

CERN Document Server

Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD diamond

International Nuclear Information System (INIS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

Micro-strip sensors based on CVD diamond

Science.gov (United States)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2000-10-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Barone, G; The ATLAS collaboration

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). In the talk the current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented. We will report on the operation of the detector including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk damage due to non-ionising radiation. The main emphasis will be given to the tracking performance of the SCT and the data quality during the >2 ye...

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Barone, G; The ATLAS collaboration

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices of the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of $4088$ silicon detector modules for a total of 6.3 million channels. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel ($4$ cylinders) and two end-cap systems (9 disks on each). The current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented. The operation of the detector including an overview of the main issues encountered is reported. The main emphasis is be given to the tracking performance of the SCT and the data quality during the $>2$ years of data taking of proton-proton collision data at $7$ TeV (and short periods of heavy ion collisions). The SCT has been fully operational throughout a...

Fabrication and impact performance of three-dimensionally integrated microstrip antennas with microstrip and coaxial feeding

International Nuclear Information System (INIS)

Yao, Lan; Wang, Xin; Xu, Fujun; Zhao, Da; Jiang, Muwen; Qiu, Yiping

2009-01-01

A conformal load-bearing antenna structure (CLAS) combines the antenna into a composite structure such that it can carry the designed load while functioning as an antenna. In this paper, two types of new 3D integrated microstrip antennas (3DIMAs) with different feeding methods are designed to work at the radar L-band. Different from the conventional CLAS, the radiating patch and the ground plane of the 3DIMA are both composed of woven conductive wires and are bonded into the 3D composite physically by Z-yarns, greatly improving the damage tolerance of the antenna. The return loss of the coaxial-fed antenna is −13.15 dB with a resonant frequency of 1.872 GHz, while that of the microstrip-fed antenna is −31.50 dB with a resonant frequency of 1.33 GHz. Both of the 3DIMAs have similar radiation patterns to that of the traditionally designed microstrip antenna. In addition, an experimental investigation of the impact response of the coaxial-fed 3DIMA was carried out and the results showed the radiation pattern had almost no change even when the antenna received an impact energy of 15 J, exhibiting superior impact resistance to that of a conventional microstrip antenna

Construction of the CDF silicon vertex detector

International Nuclear Information System (INIS)

Skarha, J.; Barnett, B.; Boswell, C.; Snider, F.; Spies, A.; Tseng, J.; Vejcik, S.; Carter, H.; Flaugher, B.; Gonzales, B.; Hrycyk, M.; Nelson, C.; Segler, S.; Shaw, T.; Tkaczyk, S.; Turner, K.; Wesson, T.; Carithers, W.; Ely, R.; Haber, C.; Holland, S.; Kleinfelder, S.; Merrick, T.; Schneider, O.; Wester, W.; Wong, M.; Amidei, D.; Derwent, P.; Gold, M.; Matthews, J.; Bacchetta, N.; Bisello, D.; Busetto, G.; Castro, A.; Loreti, M.; Pescara, L.; Bedeschi, F.; Bolognesi, V.; Dell'Agnello, S.; Galeotti, S.; Mariotti, M.; Menzione, A.; Punzi, G.; Raffaelli, F.; Risotri, L.; Tartarelli, F.; Turini, N.; Wenzel, H.; Zetti, F.; Bailey, M.; Garfinkel, A.; Shaw, N.; Tipton, P.; Watts, G.

1992-04-01

Technical details and methods used in constructing the CDF silicon vertex detector are presented. This description includes a discussion of the foam-carbon fiber composite structure used to silicon microstrip detectors and the procedure for achievement of 5 μm detector alignment. The construction of the beryllium barrel structure, which houses the detector assemblies, is also described. In addition, the 10 μm placement accuracy of the detectors in the barrel structure is discussed and the detector cooling and mounting systems are described. 12 refs

Effect of cutting temperature on hardness of SiC and diamond in the nano-cutting process of monocrystalline silicon

Science.gov (United States)

Wang, Jiachun; Li, Yuntao; Liu, Xiaoxuan; Lv, Maoqiang

2016-10-01

In the process of cutting silicon by natural diamond tools, groove wear happens on the flank face of cutting tool frequently.Scholars believe that one of the wear reasons is mechanical scratching effect by hard particles like SiC. To reveal the mechanical scratching mechanism, it is essential to study changes in the mechanical properties of hard particles and diamond, especially the effect of cutting temperature on hardness of diamond and hard particles. Molecular dynamics (MD) model that contact-zone temperature between tool and workpiece was calculated by dividing zone while nano-cutting monocrystalline silicon was established, cutting temperature values in different regions were computed as the simulation was carried out.On this basis, the models of molecular dynamics simulation of SiC and diamond were established separately with setting the initial temperature to room temperature. The laws of length change of C-C bond and Si-C bond varing with increase of simulation temperature were studied. And drawing on predecessors' research on theoretical calculation of hardness of covalent crystals and the relationship between crystal valence electron density and bond length, the curves that the hardness of diamond and SiC varing with bond length were obtained. The effect of temperature on the hardness was calculated. Results show that, local cutting temperature can reach 1300K.The rise in cutting temperature leaded to a decrease in the diamond local atomic clusters hardness,SiC local atomic clusters hardness increased. As the cutting temperature was more than 1100K,diamond began to soften, the local clusters hardness was less than that of SiC.

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

International Nuclear Information System (INIS)

Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

2014-01-01

We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

3D, Flash, Induced Current Readout for Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

2014-06-07

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

Microstrip natural wave spectrum mathematical model using partial inversion method

International Nuclear Information System (INIS)

Pogarsky, S.A.; Litvinenko, L.N.; Prosvirnin, S.L.

1995-01-01

It is generally agreed that both microstrip lines itself and different discontinuities based on microstrips are the most difficult problem for accurate electrodynamic analysis. Over the last years much has been published about principles and accurate (or full wave) methods of microstrip lines investigations. The growing interest for this problem may be explained by the microstrip application in the millimeter-wave range for purpose of realizing interconnects and a variety of passive components. At these higher operating rating frequencies accurate component modeling becomes more critical. A creation, examination and experimental verification of the accurate method for planar electrodynamical structures natural wave spectrum investigations are the objects of this manuscript. The moment method with partial inversion operator method using may be considered as a basical way for solving this problem. This method is outlook for accurate analysis of different planar discontinuities in microstrip: such as step discontinuities, microstrip turns, Y- and X-junctions and etc., substrate space steps dielectric constants and other anisotropy types

ATLAS Silicon Microstrip Tracker Operation and Performance

CERN Document Server

Nagai, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) is one of the key precision tracking devices in the ATLAS experiment at CERN Large Hadron Collider (LHC). The SCT was constructed of 4088 modules for a total of 6.3 million silicon strips and was installed into the ATLAS experiment in 2007. The SCT has been fully operational since then, and achieves a good tracking performance from the startup of the LHC operation.

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

Silicon micropattern detector: a dream

Energy Technology Data Exchange (ETDEWEB)

Heijne, E H.M.; Jarron, P; Olsen, A; Redaelli, N

1988-12-15

The present use of silicon microstrip detectors in elementary particle physics experiments is described and future needs are evaluated. Possibilities and problems to be encountered in the development of a true two-dimensional detector with intelligent data collection are discussed. This paper serves as an introduction to various other contributions to the conference proceedings, either dealing with futuristic device designs or with cautious steps on the road of technology development.

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Ultra-compact microwave filters using kinetic inductance microstrip

International Nuclear Information System (INIS)

Pond, J.M.; Carroll, K.R.; Cukauskas, E.J.

1991-01-01

This paper reports on multi-pole microwave filters designed and fabricated using microstrip transmission line sections which consist of two very thin films of sputtered niobium nitride (NbN) separated by another very thin film of sputtered Si. Since the thicknesses of all three films are much less than the superconducting penetration depth, the kinetic inductance is significantly greater than the magnetic inductance. As a result, the phase velocity of a microstrip transmission line is much less than the free space speed of light. Since resonant structures are reduced in size proportionately, the size and weight of microstrip circuits can be greatly reduced. Prototype filters consisting of four open circuit half-wavelength microstrip stubs separated by full-wavelength microstrip sections have been measured. The circuits are connected to 34 mil diameter coaxial cable via an intermediate coplanar waveguide section. Passbands of 4 GHz separated by 3 GHz reject bands have been measured in a structure which occupies less than 0.5 cm 2 including the coplanar waveguide transitions. Higher-order passbands, although possessing an increased insertion loss, maintain filter passband characteristics through 20.0 GHz

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Radiation hard cryogenic silicon detectors

International Nuclear Information System (INIS)

Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

2002-01-01

It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

2D position sensitive microstrip sensors with charge division along the strip Studies on the position measurement error

CERN Document Server

Bassignana, D; Fernandez, M; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I; Vitorero, F

2013-01-01

Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proofof-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser characterization of this first proof-of-concept demonstrator with special emphasis ...

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

Beam tests of ATLAS SCT silicon strip detector modules

Czech Academy of Sciences Publication Activity Database

Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

2005-01-01

Roč. 538, - (2005), s. 384-407 ISSN 0168-9002 R&D Projects: GA MŠk(CZ) 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * silicon * micro-strip * beam * test Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

Beam test performance of the APV5 chip

International Nuclear Information System (INIS)

De Fez-Laso, M.D.M.; Gill, K.; MacEvoy, B.; Millmore, M.; Potts, A.; Raymond, M.

1996-01-01

The performance of the latest prototype of the radiation hard front end chip to be used by the CMS collaboration for analogue readout of the microstrip tracker has been evaluated with a silicon microstrip detector in a beam at CERN. The circuit, developed by the RD20 collaboration, consists of 128 channels of amplifier, pipeline memory, analogue signal processor and a serial multiplexer. As a result of these studies improvements in the circuit design have been devised which will be implemented in the next version. (orig.)

The CMS silicon tracker

International Nuclear Information System (INIS)

Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

2000-01-01

This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

Study of New Silicon Sensors for Experiments at Future Particle Colliders

CERN Document Server

Muñoz Sánchez, Francisca Javiela

In this work, two new technologies for future tracker detectors at future colliders are studied. In addition, the characterization techniques are described and the obtained results are presented. On one side, we studied two-dimensional position-sensitive microstrip sensors. This sensors use a resistive material as electrode instead of the standard metallic one. In this way, using a single sensor we can get information about two coordinates of a particle hit. On the other side, we studied double-sided double-type 3D pixel sensors. This sensors are manufactured in 3D technology instead of in the planar technology. They show more radiation hardness and require less energy to be efficiently operated than sensors manufactured in planar technology. With this work, we demonstrate the resistive microstrip sensors functionality as particle detector and the radiation hardness of 3D pixel detectors has been evaluated.

Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

International Nuclear Information System (INIS)

Sorokin, Iurii

2013-01-01

The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10 14 n eq /cm 2 (n eq -neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the amplitude response on

Microstrip monopulse antenna for land mobile communications

Science.gov (United States)

Garcia, Q.; Martin, C.; Delvalle, J. C.; Jongejans, A.; Rinous, P.; Travers, M. N.

1993-01-01

Low cost is one of the main requirements in a communication system suitable for mass production, as it is the case for satellite land mobile communications. Microstrip technology fulfills this requirement which must be supported by a low cost tracking system design. The tradeoff led us to a prototype antenna composed of microstrip patches based on electromechanical closed-loop principle; the design and the results obtained are described.

The AMS silicon tracker readout, performance results with minimum ionizing particles

CERN Document Server

Alpat, B; Battiston, R; Bourquin, Maurice; Burger, W J; Extermann, Pierre; Chang, Y H; Hou, S R; Pauluzzi, M; Produit, N; Qiu, S; Rapin, D; Ribordy, R; Toker, O; Wu, S X

2000-01-01

First results for the AMS silicon tracker readout performance are presented. Small 20.0*20.0*0.300 mm/sup 3/ silicon microstrip detectors were installed in a 50 GeV electron beam at CERN. The detector readout consisted of prototypes of the tracker data reduction card equipped with a 12-bit ADC and the tracker frontend hybrid with VA_hdr readout chips. The system performance is assessed in terms of signal-to-noise, position resolution, and efficiency. (13 refs).

The rad-hard readout system of the BaBar silicon vertex tracker

Science.gov (United States)

Re, V.; DeWitt, J.; Dow, S.; Frey, A.; Johnson, R. P.; Kroeger, W.; Kipnis, I.; Leona, A.; Luo, L.; Mandelli, E.; Manfredi, P. F.; Nyman, M.; Pedrali-Noy, M.; Poplevin, P.; Perazzo, A.; Roe, N.; Spencer, N.

1998-02-01

This paper discusses the behaviour of a prototype rad-hard version of the chip developed for the readout of the BaBar silicon vertex tracker. A previous version of the chip, implemented in the 0.8 μm HP rad-soft version has been thoroughly tested in the recent times. It featured outstanding noise characteristics and showed that the specifications assumed as target for the tracker readout were met to a very good extent. The next step was the realization of a chip prototype in the rad-hard process that will be employed in the actual chip production. Such a prototype is structurally and functionally identical to its rad-soft predecessor. However, the process parameters being different, and not fully mastered at the time of design, some deviations in the behaviour were to be expected. The reasons for such deviations have been identified and some of them were removed by acting on the points that were left accessible on the chip. Other required small circuit modifications that will not affect the production schedule. The tests done so far on the rad-hard chip have shown that the noise behaviour is very close to that of the rad-soft version, that is fully adequate for the vertex detector readout.

Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

Science.gov (United States)

Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

Initial investigations of the performance of a microstrip gas-avalanche chamber fabricated on a thin silicon-dioxide substrate

International Nuclear Information System (INIS)

Biagi, S.F.; Jackson, J.N.; Jones, T.J.; Taylor, S.

1992-01-01

We report on the construction of a micro-strip gas-avalanche chamber, designed such that the effective thickness of the insulating dielectric is ≅ 3 μm. Experimental results are presented on the initial observation of pulses from the chamber originating from the energy depositions of X-rays from an Fe 55 source. (orig.)

Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

International Nuclear Information System (INIS)

Lietti, D.; Bagli, E.; Baricordi, S.; Berra, A.; Bolognini, D.; Chirkov, P.N.; Dalpiaz, P.; Della Mea, G.; De Salvador, D.; Hasan, S.; Guidi, V.; Maisheev, V.A.

2012-01-01

The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.

Wearable Inset-Fed FR4 Microstrip Patch Antenna Design

Science.gov (United States)

Zaini, S. R. Mohd; Rani, K. N. Abdul

2018-03-01

This project proposes the design of a wireless body area network (WBAN) microstrip patch antenna covered by the jeans fabric as the outer layer operating at the center frequency, fc of 2.40 GHz. Precisely, the microstrip patch antenna with the inset-fed edge technique is designed and simulated systematically by using the Keysight Advanced Design System (ADS) software where the FR4 board with the dielectric constant, ɛr of 4.70, dissipation factor or loss tangent, tan δ of 0.02 and height, h of 1.60 mm is the chosen dielectric substrate. The wearable microstrip patch antenna design is then fabricated using the FR4 printed circuit board (PCB) material, hidden inside the jeans fabric, and attached to clothing, such as a jacket accordingly. Simulation and fabrication measurement results show that the designed microstrip patch antenna characteristics can be applied significantly within the industrial, scientific, and medical (ISM) radio band, which is at fc = 2.40 GHz.

Analysis of Microstrip Line Fed Patch Antenna for Wireless Communications

Directory of Open Access Journals (Sweden)

Singh Ashish

2017-11-01

Full Text Available In this paper, theoretical analysis of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator is presented. The proposed antenna shows that the dualband operation depends on gap between parasitic element, split-ring resonator, length and width of microstrip line. It is found that antenna resonates at two distinct resonating modes i.e., 0.9 GHz and 1.8 GHz for lower and upper resonance frequencies respectively. The antenna shows dual frequency nature with frequency ratio 2.0. The characteristics of microstrip line fed rectangular patch antenna loaded with parasitic element and split-ring resonator antenna is compared with other prototype microstrip line fed antennas. Further, the theoretical results are compared with simulated and reported experimental results, they are in close agreement.

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

Wideband RCS Reduction of Microstrip Array Antenna Based on Absorptive Frequency Selective Surface and Microstrip Resonators

Directory of Open Access Journals (Sweden)

Jingjing Xue

2017-01-01

Full Text Available An approach for wideband radar cross section (RCS reduction of a microstrip array antenna is presented and discussed. The scheme is based on the microstrip resonators and absorptive frequency selective surface (AFSS with a wideband absorptive property over the low band 1.9–7.5 GHz and a transmission characteristic at high frequency 11.05 GHz. The AFSS is designed to realize the out-of-band RCS reduction and preserve the radiation performance simultaneously, and it is placed above the antenna with the operating frequency of 11.05 GHz. Moreover, the microstrip resonators are loaded to obtain the in-band RCS reduction. As a result, a significant RCS reduction from 1.5 GHz to 13 GHz for both types of polarization has been accomplished. Compared with the reference antenna, the simulated results exhibit that the monostatic RCS of the proposed array antenna in x- and y-polarization can be reduced as much as 17.6 dB and 21.5 dB, respectively. And the measured results agree well with the simulated ones.

SVX II a silicon vertex detector for run II of the tevatron

International Nuclear Information System (INIS)

Bortoletto, D.

1994-11-01

A microstrip silicon detector SVX II has been proposed for the upgrade of the vertex detector of the CDF experiment to be installed for run II of the Tevatron in 1998. Three barrels of four layers of double sided detectors will cover the interaction region. The requirement of the silicon tracker and the specification of the sensors are discussed together with the proposed R ampersand D to verify the performance of the prototypes detectors produced by Sintef, Micron and Hamamatsu

Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

OpenAIRE

Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

2002-01-01

To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

Characterisation of an inhomogeneously irradiated microstrip detector using a fine spot infrared laser

CERN Document Server

Casse, G; Bowcock, T J V; Greenall, A; Phillips, JP; Turner, PR; Wright, V

2001-01-01

A prototype silicon microstrip detector for the LHCb vertex locator (VELO) has been partially irradiated using a 24 GeV/c proton beam at the CERN-PS accelerator. The detector possesses a radial strip geometry designed to measure the azimuthal coordinate (Phi) of tracks within the VELO. The peak fluence received by the detector was measured to be 4.6×10 14 p/cm 2 though the non-uniform nature of the exposure left part of the detector unirradiated. The inhomogeneous irradiation introduced a damage profile in the detector approximating to that expected in the VELO. High irradiation gradients are important to study as they can modify the electric field within the silicon. Of special interest are changes in the component of the electric field parallel to the strip plane but perpendicular to the strips which lead to systematic shifts in the reconstructed cluster position. If these (flux and position dependent) shifts are sufficiently large they could contribute to a degraded spatial resolution of the detector. In ...

Evaluation of silicon micro strip detectors with large read-out pitch

International Nuclear Information System (INIS)

Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

1996-01-01

For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

The design and simulation of UHF RFID microstrip antenna

Science.gov (United States)

Chen, Xiangqun; Huang, Rui; Shen, Liman; Liu, Liping; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Renheng, Xu

2018-02-01

At present, China has delineated UHF RFID communicating frequency range which is 840 ∼ 845 MHz and 920 ∼ 925 MHz, but most UHF microstrip antenna don’t carry out this standard, that leads to radio frequency pollution. In order to solve the problems above, a method combining theory and simulation is adopted. Combining with a new ceramic material, a 925.5 MHz RFID microstrip antenna is designed, which is optimized and simulated by HFSS software. The results show that the VSWR of this RFID microstrip antenna is relatively small in the vicinity of 922.5 MHz, the gain is 2.1 dBi, which can be widely used in China’s UHF RFID communicating equipments.

Superconducting microstrip antennas: An experimental comparison of two feeding methods

International Nuclear Information System (INIS)

Richard, M.A.; Claspy, P.C.; Bhasin, K.B.

1993-01-01

The recent discovery of high-temperature superconductors (HTS's) has generated a substantial amount of interest in microstrip antenna applications. However, the high permittivity of substrates compatible with HTS causes difficulty in feeding such antennas because of the high patch edge impedance. In this paper, two methods for feeding HTS microstrip antennas at K and Ka-band are examined. Superconducting microstrip antennas that are directly coupled and gap-coupled to a microstrip transmission line have been designed and fabricated on lanthanum aluminate substrates using Y-Ba-Cu-O superconducting thin films. Measurements from these antennas, including input impedance, bandwidth, efficiency, and patterns, are presented and compared with published models. The measured results demonstrate that usable antennas can be constructed using either of these architectures, although the antennas suffer from narrow bandwidths. In each case, the HTS antenna shows a substantial improvement over an identical antenna made with normal metals

Radiation damage status of the ATLAS silicon strip detectors (SCT)

CERN Document Server

Kondo, Takahiko; The ATLAS collaboration

2017-01-01

The Silicon microstrip detector system (SCT) of the ATLAS experiment at LHC has been working well for about 7 years since 2010. The innermost layer has already received a few times of 10**13 1-MeV neutron-equivalent fluences/cm2. The evolutions of the radiation damage effects on strip sensors such as leakage current and full depletion voltages will be presented.

Hard times; Schwere Zeiten

Energy Technology Data Exchange (ETDEWEB)

Grunwald, Markus

2012-10-02

The prices of silicon and solar wafers keep dropping. According to market research specialist IMS research, this is the result of weak traditional solar markets and global overcapacities. While many manufacturers are facing hard times, big producers of silicon are continuing to expand.

Signal integrity analysis on discontinuous microstrip line

International Nuclear Information System (INIS)

Qiao, Qingyang; Dai, Yawen; Chen, Zipeng

2013-01-01

In high speed PCB design, microstirp lines were used to control the impedance, however, the discontinuous microstrip line can cause signal integrity problems. In this paper, we use the transmission line theory to study the characteristics of microstrip lines. Research results indicate that the discontinuity such as truncation, gap and size change result in the problems such as radiation, reflection, delay and ground bounce. We change the discontinuities to distributed parameter circuits, analysed the steady-state response and transient response and the phase delay. The transient response cause radiation and voltage jump.

Photon counting microstrip X-ray detectors with GaAs sensors

Science.gov (United States)

Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

2018-01-01

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

Resonance of Superconducting Microstrip Antenna with Aperture in the Ground Plane

Directory of Open Access Journals (Sweden)

S. Benkouda

2013-08-01

Full Text Available This paper presents a rigorous full-wave analysis of a high Tc superconducting rectangular microstrip antenna with a rectangular aperture in the ground plane. To include the effect of the superconductivity of the microstrip patch in the full-wave analysis, a complex surface impedance is considered. The proposed approach is validated by comparing the computed results with previously published data. Results showing the effect of the aperture on the resonance of the superconducting microstrip antenna are given.

The Alpha Magnetic Spectrometer Silicon Tracker

CERN Document Server

Burger, W J

1999-01-01

The Alpha Magnetic Spectrometer (AMS) is designed as a independent module for installation on the International Space Station Alpha (ISSA) in the year 2002 for an operational period of three years. The principal scientific objectives are the searches for antimatter and dark matter in cosmic rays. The AMS uses 5.5 m sup 2 of silicon microstrip sensors to reconstruct charged particle trajectories in the field of a permanent magnet. The detector design and construction covered a 3 yr period which terminated with a test flight on the NASA space shuttle Discovery during June 2-12, 1988. In this contribution, we describe the shuttle version of the AMS silicon tracker, including preliminary results of the tracker performance during the flight. (author)

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

Science.gov (United States)

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

A multiplicity jump trigger using silicon planes

International Nuclear Information System (INIS)

Alexopoulos, T.; Erwin, A.R.

1993-01-01

Since silicon tracking planes are already present in a B decay experiment, it is an attractive idea to use these as part of a multiplicity jump detector. Two average B decays would produce a multiplicity jump of around 10 in the final state. Such a trigger has been tried for a fixed target Charm experiment with disappointing success. The failure was attributed to the difficulty in adequately controlling the gains of a large number of microstrip amplifies

Gas microstrip detectors based on flexible printed circuit

International Nuclear Information System (INIS)

Salomon, M.; Crowe, K.; Faszer, W.; Lindsay, P.; Curran Maier, J.M.

1995-09-01

Microstrip Gas Detectors (MSGC's) were introduced some years ago as position sensitive detectors capable of operating at very high rates. The authors have studied the properties of a new type of Gas Microstrip Counter built using flexible printed circuit technology. They describe the manufacturing procedures, the assembly of the device, as well as its operation under a variety of conditions, gases and types of radiation. They also describe two new passivation materials, tantalum and niobium, which produce effective surfaces

Study of Prompt Dimuon and Charm Production with Proton and Heavy Ion Beams at the CERN SPS

CERN Multimedia

Cicalo, C

2002-01-01

The NA60 detector complements the muon spectrometer and zero degree calorimeter previously used in NA50 with new state-of-the-art silicon detectors, placed in the target region. A radiation hard beam tracker, made of silicon microstrip detectors operated at 130 K, is placed on the beam line, upstream of the target system. It gives the transverse coordinates of the interaction point on the targets with a precision around 20 micron, allowing us to measure the offset of the muon tracks, and tag events where a pair of D mesons was produced. Downstream of the target system, and inside a dipole magnetic field of 2.5 T, we have a silicon tracking telescope, that tracks the charged particles and allows us to identify which one of them provides the best match to the muon measured in the muon spectrometer, placed behind a 5.5m silicon microstrip planes complemented by pixel planes. For the ion runs, the very high multiplicity of charged particles imposes the exclusive use of radiation tolerant pixel detectors.

LHCb: Installation and operation of the LHCb Silicon Tracker detector

CERN Multimedia

Esperante Pereira, D

2009-01-01

The LHCb experiment has been designed to perform high-precision measurements of CP violation and rare decays of B hadrons. The construction and installation phases of the Silicon Tracker (ST) of the experiment were completed by early summer 2008. The LHCb Silicon Tracker sums up to a total sensitive area of about 12 m^2 using silicon micro-strip technology and withstands charged particle fluxes of up to 5 x 10^5cm^−2s^−1. We will report on the preparation of the detectors for the first LHC beams. Selected results from the commissioning in LHCb are shown, including the first beam-related events accumulated during LHC injection tests in September 2008. Lessons are drawn from the experience gathered during the installation and commissioning.

Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Sorokin, Iurii

2013-07-01

The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10{sup 14} n{sub eq}/cm{sup 2} (n{sub eq}-neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the

Silicon position-sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Silicon position sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Theoretical and experimental study of microstrip-to-slot line uniplanar transition

Science.gov (United States)

Yook, Jong-Gwan; Dib, Nihad I.; Katehi, Linda P. B.; Simons, Rainee N.; Taub, Susan R.

1994-05-01

Recent advances in MMCI technology make it possible to construct transitions from CPW-to-microstrip with via hole, microstrip-to-slot line and microshield line-to-CPW all of which have potential applications in the feed network of antennas. In this study we investigate the characteristics of the microstrip-to-slot line uniplanar transition using the finite element methods (FEM) and finite difference time domain (FDTD) techniques, and compared the theoretical results with the measurements. In both cases, the results agree with the measurements within a few percent.

Development of Technique for Testing the Long-Term Stability of Silicon Microstrip Detectors

International Nuclear Information System (INIS)

Kosinov, A.V.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Starodubtsev, A.F.; Vasiliev, G.P.; Yalovenko, V.I.; Bosisio, L.

2006-01-01

An automatic multi-channel set-up prototype for simultaneous testing of the Long-Term Stability (LTS) of more than ten detectors is described. The Inner Tracking System of the ALICE experiment will include about two thousand Double-sided Microstrip Detectors (DSMD). Efficient automatic measurement techniques are crucial for the LTS test, because the corresponding test procedure should be performed on each detector and requires long time, at least two days. By using special adapters for supporting and connecting the bare DSMDs, failing detectors can be screened out before module assembly, thus minimizing the cost. Automated probe stations developed for a special purpose or for microelectronics industry are used for measuring physical static DSMD characteristics and check good-to-bad elements ratio for DSMD. However, automated (or semi-automatic)test benches for studying LTS or testing DSMD long-term stability before developing a detecting module are absent

A New Defected Ground Structure for Different Microstrip Circuit Applications

Directory of Open Access Journals (Sweden)

S. Das

2007-04-01

Full Text Available In this paper, a microstrip transmission line combined with a new U-headed dumb-bell defected ground structure (DGS is investigated. The proposed DGS of two U-shape slots connected by a thin transverse slot is placed in the ground plane of a microstrip line. A finite cutoff frequency and attenuation pole is observed and thus, the equivalent circuit of the DGS unit can be represented by a parallel LC resonant circuit in series with the transmission line. A two-cell DGS microstrip line yields a better lowpass filtering characteristics. The simulation is carried out by the MoM based IE3D software and in the experimental measurements a vector network analyzer is used. The effects of the transverse slot width and the distance between arms of the U-slot on the filter response curve are studied. This DGS is utilized for different microstrip circuit applications. The DGS is placed in the ground of a capacitive loaded microstrip line and a very low cutoff frequency is obtained. The DGS is adopted under the coupled lines of a parallel line coupler and an improvement in coupling coefficient is noticed. The proposed DGS is also incorporated in the ground plane under the feed lines and the coupled lines of a bandpass filter to improve separately the stopband and passband performances.

Production and test of the LHCf microstrip silicon system

International Nuclear Information System (INIS)

Bonechi, L.; Adriani, O.; Bongi, M.; Castellini, G.; D'Alessandro, R.; Faus, A.; Haguenauer, M.; Itow, Y.; Kasahara, K.; Macina, D.; Mase, T.; Masuda, K.; Matsubara, Y.; Matsumoto, H.; Menjo, H.; Mizuishi, M.; Muraki, Y.; Papini, P.; Perrot, A.L.; Ricciarini, S.

2008-01-01

After a preliminary installation test, successfully performed in 2007, both the detectors of the LHCf experiment are now ready to be installed at the CERN LHC accelerator for the first physics run. A beam test at SPS in September 2007 allowed to verify the performance of the apparata. Production and test of the silicon tracker developed for one of them are shortly discussed in this work.

Commissioning and Performance of the LHCb Silicon Tracker

CERN Multimedia

van Tilburg, J; Buechler, A; Bursche , A; Chiapolini, N; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Staumann, U; Tobin, M; Vollhardt, A; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Fave, V; Frei, R; Gauvin, N; Gonzalez, R; Haefeli, G; Hicheur, A; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Perrin, A; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Adeva, B; Esperante, D; Fungueiriño Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló Casasús, M; Rogríguez Pérez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The LHCb Silicon Tracker is a silicon micro-strip detector with a sensitive area of 12 m$^2$ and a total of 272k readout channels. The Silicon Tracker consists of two parts that use different detector modules. The detector installation was completed by early summer 2008 and the commissioning without beam has reached its finals stage, successfully overcoming most of the encountered problems. Currently, the detector has more than 99% of the channels fully functioning. Commissioning with particles has started using beam-induced events from the LHC injection tests in 2008 and 2009. These events allowed initial studies of the detector performance. Especially, the detector modules could be aligned with an accuracy of about 20 $\\mu$m. Furthermore, with the first beam collisions that took place end of 2009 we could further study the performance and improve the alignment of the detector.

Excitation of propagating magnetization waves by microstrip antennas

Science.gov (United States)

Dmitriev, V. F.; Kalinikos, B. A.

1988-11-01

We discuss the self-consistent theory of excitation of dipole-exchange magnetization waves by microstrip antennas in a metal-dielectric-ferrite-dielectric-metal stratified structure, magnetized under an arbitrary angle to the surface. Spin-wave Green's functions are derived, describing the response of the spin-system to a spatially inhomogeneous varying magnetic field. The radiative resistance of microstrip antenna is calculated. In this case the distribution of surface current density in the antenna is found on the basis of the analytic solution of a singular integral equation. The nature of the effect of metallic screens and redistributed surface current densities in the antenna on the frequency dependence of the resistive radiation is investigated. Approximate relations are obtained, convenient for practical calculations of radiative resistance of microstrip antennas both in a free and in a screened ferromagnetic film. The theoretical calculations are verified by data of experiments carried out on monocrystalline films of iron-yttrium garnet.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Science.gov (United States)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1-10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1-10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

International Nuclear Information System (INIS)

Khalil, M.; Laurent, P.; Lebrun, F.; Tatischeff, V.; Dolgorouky, Y.; Bertoli, W.; Breelle, E.

2016-01-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Thick silicon microstrip detectors simulation for PACT: Pair and Compton Telescope

Energy Technology Data Exchange (ETDEWEB)

Khalil, M., E-mail: khalilmohammad@hotmail.com [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); Laurent, P.; Lebrun, F. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France); CEA, Centre de Saclay, 91191 Gif-Sur-Yvette Cedex (France); Tatischeff, V. [CSNSM, IN2P3/CNRSand Paris-Sud University, 91405 Orsay Campus (France); Dolgorouky, Y.; Bertoli, W.; Breelle, E. [APC Laboratory, 10rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13 (France)

2016-11-01

PACT is a space borne Pair and Compton Telescope that aims to make a sensitive survey of the gamma-ray sky between 100 keV and 100 MeV. It is based upon two main components: a silicon-based gamma-ray tracker and a crystal-based calorimeter. In this paper we will explain the imaging technique of PACT as a Multi-layered Compton telescope (0.1–10 MeV) and its major improvements over its predecessor COMPTEL. Then we will present a simulation study to optimize the silicon tracker of PACT. This tracker is formed of thousands of identical silicon double sided strip detectors (DSSDs). We have developed a simulation model (using SILVACO) to simulate the DSSD performance while varying its thickness, impurity concentration of the bulk material, electrode pitch, and electrode width. We will present a comprehensive overview of the impact of each varied parameter on the DSSD performance, in view of the application to PACT. The considered DSSD parameters are its depletion voltage, capacitance, and leakage current. After the selection of the PACT DSSD, we will present a simulation of the performance of the PACT telescope in the 0.1–10 MeV range.

Perturbation approach to design of circularly polarised microstrip antennas

Science.gov (United States)

Lo, Y. T.; Richards, W. F.

1981-05-01

One of the most interesting applications of microstrip antennas is its use for transmitting or receiving circularly polarized (CP) waves. A description is given of a simple but accurate method to determine the critical dimensions needed to produce circular polarization for nearly square and nearly circular microstrip antennas. Shen (1981) in connection with the determination of the proper dimensions of an elliptical patch CP microstrip antenna first expressed the modal field in terms of Mathieu functions. To avoid the complicated numerical computation of the Mathieu functions, he approximated these functions in terms of Bessel functions. It is pointed out that the computation of Mathieu functions, or their approximate expressions can be avoided altogether if a perturbation method is applied to find the resonant frequencies of the two orthogonal modes. The implementation of this approach is demonstrated.

The DAMPE silicon tungsten tracker

CERN Document Server

Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

2017-01-01

The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

Wireless OAM transmission system based on elliptical microstrip patch antenna.

Science.gov (United States)

Chen, Jia Jia; Lu, Qian Nan; Dong, Fei Fei; Yang, Jing Jing; Huang, Ming

2016-05-30

The multiplexing transmission has always been a focus of attention for communication technology. In this paper, the radiation characteristics of circular microstrip patch antenna was firstly analyzed based on cavity model theory, and then spiral beams carrying orbital angular momentum (OAM) were generated, using elliptical microstrip patch antenna, with a single feed probe instead of a standard circular patch with two feedpoints. Moreover, by combining the proposed elliptic microstrip patch antenna with Universal Software Radio Peripheral (USRP), a wireless OAM transmission system was established and the real-time transmission of text, image and video in a real channel environment was realized. Since the wireless OAM transmission has the advantage of good safety and high spectrum utilization efficiency, this work has theoretical significance and potential application.

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

A silicon track trigger for the DOe experiment

International Nuclear Information System (INIS)

Narain, Meenakshi

2000-01-01

The design of a processor to trigger on long-lived particles (e.g. b-quarks) for the DOe experiment at the Fermilab Tevatron is presented. This device reconstructs the trajectory of the charged particles in the DOe tracking system, which consists of a central fiber tracker and a silicon microstrip tracker. The r-phi impact parameter resolution of the fitted tracks is about 40 μm. This enables the identification of the long-lived b-quarks produced in the decays of various particles, e.g. the top quarks, Higgs Boson, techni-particles and other exotic particles produced in pp-bar collisions at the Tevatron. In this report we describe the design of the architecture and algorithms for the Silicon Track Trigger

A silicon track trigger for the DOe experiment

CERN Document Server

Narain, M

2000-01-01

The design of a processor to trigger on long-lived particles (e.g. b-quarks) for the DOe experiment at the Fermilab Tevatron is presented. This device reconstructs the trajectory of the charged particles in the DOe tracking system, which consists of a central fiber tracker and a silicon microstrip tracker. The r-phi impact parameter resolution of the fitted tracks is about 40 mu m. This enables the identification of the long-lived b-quarks produced in the decays of various particles, e.g. the top quarks, Higgs Boson, techni-particles and other exotic particles produced in pp-bar collisions at the Tevatron. In this report we describe the design of the architecture and algorithms for the Silicon Track Trigger.

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

A gas microstrip X-ray detector for soft energy fluorescence EXAFS

CERN Document Server

Smith, A D; Derbyshire, G E; Duxbury, D M; Lipp, J; Spill, E J; Stephenson, R

2001-01-01

Gas microstrip detectors have been previously developed by the particle physics community, where their robustness, compactness and high counting speed have been recognised. These features are particularly attractive to synchrotron radiation use. In this paper, we describe a gas microstrip detector employing multi-element readout and specifically developed for high count rate fluorescence EXAFS at soft X-ray energies below 4 keV.

Microstrip microwave band gap structures

Indian Academy of Sciences (India)

The periodic lattice of PTFE–air combination has the dielectric contrast (defined as the ratio between the dielectric constant of the substrate to that of the background, air) of 2.08. At both ends of the microstrip. MBG, two sub-miniature adapter (SMA) coaxial connectors were placed. The measurements as well as theoretical ...

Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

Energy Technology Data Exchange (ETDEWEB)

Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

2016-07-01

Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

The DOe Silicon Track Trigger

International Nuclear Information System (INIS)

Steinbrueck, Georg

2003-01-01

We describe a trigger preprocessor to be used by the DOe experiment for selecting events with tracks from the decay of long-lived particles. This Level 2 impact parameter trigger utilizes information from the Silicon Microstrip Tracker to reconstruct tracks with improved spatial and momentum resolutions compared to those obtained by the Level 1 tracking trigger. It is constructed of VME boards with much of the logic existing in programmable processors. A common motherboard provides the I/O infrastructure and three different daughter boards perform the tasks of identifying the roads from the tracking trigger data, finding the clusters in the roads in the silicon detector, and fitting tracks to the clusters. This approach provides flexibility for the design, testing and maintenance phases of the project. The track parameters are provided to the trigger framework in 25 μs. The effective impact parameter resolution for high-momentum tracks is 35 μm, dominated by the size of the Tevatron beam

MULTIOBJECTIVE EVOLUTIONARY ALGORITHMS APPLIED TO MICROSTRIP ANTENNAS DESIGN ALGORITMOS EVOLUTIVOS MULTIOBJETIVO APLICADOS A LOS PROYECTOS DE ANTENAS MICROSTRIP

Directory of Open Access Journals (Sweden)

Juliano Rodrigues Brianeze

2009-12-01

Full Text Available This work presents three of the main evolutionary algorithms: Genetic Algorithm, Evolution Strategy and Evolutionary Programming, applied to microstrip antennas design. Efficiency tests were performed, considering the analysis of key physical and geometrical parameters, evolution type, numerical random generators effects, evolution operators and selection criteria. These algorithms were validated through design of microstrip antennas based on the Resonant Cavity Method, and allow multiobjective optimizations, considering bandwidth, standing wave ratio and relative material permittivity. The optimal results obtained with these optimization processes, were confirmed by CST Microwave Studio commercial package.Este trabajo presenta tres de los principales algoritmos evolutivos: Algoritmo Genético, Estrategia Evolutiva y Programación Evolutiva, aplicados al diseño de antenas de microlíneas (microstrip. Se realizaron pruebas de eficiencia de los algoritmos, considerando el análisis de los parámetros físicos y geométricos, tipo de evolución, efecto de generación de números aleatorios, operadores evolutivos y los criterios de selección. Estos algoritmos fueron validados a través del diseño de antenas de microlíneas basado en el Método de Cavidades Resonantes y permiten optimizaciones multiobjetivo, considerando ancho de banda, razón de onda estacionaria y permitividad relativa del dieléctrico. Los resultados óptimos obtenidos fueron confirmados a través del software comercial CST Microwave Studio.

ΔOSI: a prototype microstrip dosimeter for characterization of medical radiotherapy and radiosurgery systems

International Nuclear Information System (INIS)

Redondo-Fernandez, I.; Buttar, C.; Walsh, S.; Manolopoulos, S.; Homer, J.M.; Young, S.; Conway, J.

2006-01-01

As the technology for medical radiotherapy and radiosurgery evolves, there is a growing need for dosimeters capable of measuring dose distributions on-line with submillimeter spatial resolution, both for facility commissioning and patient-related quality assurance. We have designed and built a high spatial resolution dosimeter based on silicon micro-strip technology for characterization of small radiotherapy and radiosurgery fields. The aim is to provide relative dosimetry measurement with film-like spatial resolution and to be able to resolve the temporal evolution. Following the description of the prototypes, first beam test results of a 250 μm pitch, 128 channels prototype with X-rays in a clinical 6 MV accelerator are presented. The device demonstrated good dosimetric capabilities when compared to reference measurements made with ionization chambers and agrees with radiographic film in the steep dose gradient region produced by the collimator edge

Radial microstrip slotline feed network for circular mobile communications array

Science.gov (United States)

Simons, Rainee N.; Kelly, Eron S.; Lee, Richard Q.; Taub, Susan R.

1994-01-01

In mobile and satellite communications there is a need for low cost and low profile antennas which have a toroidal pattern. Antennas that have been developed for mobile communications include a L-Band electronically steered stripline phased array, a Ka-Band mechanically steered elliptical reflector antenna and a Ka-Band printed dipole. In addition, a L-Band mechanically steered microstrip array, a L-Band microstrip phased array tracking antenna for mounting on a car roof and an X-Band radial line slotted waveguide antenna have been demonstrated. In the above electronically scanned printed arrays, the individual element radiates normally to the plane of the array and hence require a phase shifter to scan the beam towards the horizon. Scanning in the azimuth is by mechanical or electronic steering. An alternate approach is to mount microstrip patch radiators on the surface of a cone to achieve the required elevation angle. The array then scans in the azimuth by beam switching.

A proposal to use microstrip gas counters in a LHC tracker

International Nuclear Information System (INIS)

Geijsberts, M.; Hartjes, F.G.; Pannekoek, J.G.; Schmitz, J.; Udo, F.

1991-06-01

The paper presents an LHC tracker constructed from microstrip gas counters, occupying a cylinder around the beam r=400 mm and r=900 mm. The instrument measures 12 points on track with an accuracy of 30μm. Due to fine granularity and the short charge collection time, the occupancy is below 1 percent at a luminosity of L=10 34 cm -2 . Operating at high magnetic fields and a fast charge collection process are possible using Xe/DME/CO 2 mixtures and reducing the gap width between substrate and drift cathode to 1.6 mm. Hits from low energetic tracks are largely suppressed and hard tracks stand out, which greatly facilitates pattern recognition. By introducing a small stereo angle, the (r,z) coordinate can be measured with an accuracy of 1 mm. A calculation of the collected charge per strip shows that the tracker can withstand the LHC radiation for many years. (author). 9 refs.; 7 figs

Bandwidth enhancement of a microstrip patch antenna for ultra-wideband applications

Science.gov (United States)

Anum, Khanda; Singh, Milind Saurabh; Mishra, Rajan; Tripathi, G. S.

2018-04-01

The microstrip antennas are used where size, weight, cost, and performance are constraints. Microstrip antennas (MSA) are being used in many government and commercial applications among which it is mostly used in wireless communication. The proposed antenna is designed for Ultra-wideband (UWB), it is designed on FR4 substrate material with ɛr = 4.3 and 0.0025 loss tangent. The shape and size of patch in microstrip patch antenna plays an important role in its performance. In the proposed antenna design the respective changes have been introduced which includes slotting the feedline,adding a curved slot in patch and change in patch shape itself to improve the bandwidth of the conventional antenna. The simulated results of proposed antenna shows impedance bandwidth (defined by 10 dB return loss) of 2-11.1GHz, VSWRcommunication at 7.25-8.395 GHz.

Quality assurance database for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Lymanets, Anton [Physikalisches Institut, Universitaet Tuebingen (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System is a main tracking device of the CBM Experiment at FAIR. Its construction includes production, quality assurance and assembly of large number of components, e.g., 106 carbon fiber support structures, 1300 silicon microstrip sensors, 16.6k readout chips, analog microcables, etc. Detector construction is distributed over several production and assembly sites and calls for a database that would be extensible and allow tracing the components, integrating the test data, monitoring the component statuses and data flow. A possible implementation of the above-mentioned requirements is being developed at GSI (Darmstadt) based on the FAIR DB Virtual Database Library that provides connectivity to common SQL-Database engines (PostgreSQL, Oracle, etc.). Data structure, database architecture as well as status of implementation are discussed.

Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

Science.gov (United States)

Arakcheev, A.; Aulchenko, V.; Kudashkin, D.; Shekhtman, L.; Tolochko, B.; Zhulanov, V.

2017-06-01

Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0~10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

International Nuclear Information System (INIS)

Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

2014-01-01

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10 6 ) photonic crystal cavities with low mode volume (V m  = 1.062 × (λ/n) 3 ), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10 3

Two-dimensional microstrip detector for neutrons

Energy Technology Data Exchange (ETDEWEB)

Oed, A [Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)

1997-04-01

Because of their robust design, gas microstrip detectors, which were developed at ILL, can be assembled relatively quickly, provided the prefabricated components are available. At the beginning of 1996, orders were received for the construction of three two-dimensional neutron detectors. These detectors have been completed. The detectors are outlined below. (author). 2 refs.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

The front-end amplifier for the silicon microstrip sensors of the PANDA MVD

Energy Technology Data Exchange (ETDEWEB)

Di Pietro, Valentino; Brinkmann, Kai-Thomas; Riccardi, Alberto [II. Physikalisches Institut, JLU Giessen (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy)

2015-07-01

The most common readout systems designed for the nuclear physics detectors are based on amplitude measurements. The information that needs to be preserved is the charge delivered by a particle hitting the sensor. The electronic chain employed in these cases is made from two main building blocks: front-end amplifier and ADC. One of the issues associated with the implementation of such an architecture in scaled CMOS technologies is the dynamic range, because the charge information is extrapolated through the sampling of the peak of the front-end output signal. It is therefore interesting to explore the possibility of using time-based architectures offering better performances from that point of view. In fact, in these topologies the linearity between the charge and the signal duration can be maintained even if some building blocks in the chain saturate. The main drawback is the loss in resolution since a duration measurement involves the difference between two time measurements. This work will present the design of a front-end optimized for fast Time-over-Threshold applications. The circuit has been developed for the microstrip detectors of the PANDA experiment. The key features of the front-end amplifier are illustrated and both schematic level, and post-layout simulations are discussed.

Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

Czech Academy of Sciences Publication Activity Database

Hara, K.; Affolder, A.A.; Allport, P.P.; Bates, R.; Betancourt, C.; Böhm, Jan; Brown, H.; Buttar, C.; Carter, J. R.; Casse, G.; Mikeštíková, Marcela

2011-01-01

Roč. 636, č. 1 (2011), "S83"-"S89" ISSN 0168-9002 R&D Projects: GA MŠk LA08032 Institutional research plan: CEZ:AV0Z10100502 Keywords : p-bulk silicon * microstrip * charge collection * radiation damage Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.207, year: 2011 http://dx.doi.org/10.1016/j.nima.2010.04.090

Development of ALICE microstrip detectors at IRST

International Nuclear Information System (INIS)

Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Gregori, P.; Rachevskaia, I.; Zorzi, N.

2001-01-01

We report on the development of double-sided, AC-coupled, microstrip detectors oriented to the A Large Ion Collider Experiment (ALICE). The main design and processing issues are presented, together with some selected results from the electrical characterization of detectors and related test structures

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

Energy Technology Data Exchange (ETDEWEB)

Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Bertsche, W. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [European Laboratory for Particle Physics, CERN, CH-1211 Geneva 23 (Switzerland); Cesar, C.L. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Fujiwara, M.C. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hangst, J.S. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Hardy, W.N. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hayden, M.E. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Hayano, R.S. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Humphries, A.J. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); and others

2012-08-21

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

CERN Document Server

Andresen, G B; Bertsche, W; Bowe, P D; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D.R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Hayano, R S; Humphries, A J; Hydomako, R; Jonsell, S; Jorgensen, L V; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Yamazaki, Y

2012-01-01

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

The silicon tracking system of the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Singla, Minni [GSI Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter (CBM) experiment, one of the major scientific pillars at FAIR, will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. The Silicon Tracking System is the central detector system of the CBM experiment. Its task is to perform track reconstruction and momentum determination for all charged particles created in beam-target collisions at SIS 100 and SIS 300 beam energies. The technical challenges to meet are a high granularity matching the high track densities, a fast self-triggering read-out coping with high interaction rates, and a low mass to yield high momentum resolution of Δp/p=1%. The detector system acceptance covers polar angles between 2.5 and 25 degrees and will be operated in the 1 T field of a superconducting dipole magnet. We introduce the concept of the STS, being comprised of eight tracking stations employing ∝1300 double-sided silicon microstrip sensors on modular structures that keep the read-out electronics outside the physics aperture. Ultra-thin-multiline micro-cables will be used to bridge the distance between the microstrip sensors and the readout electronics. Infrastructure such as power lines and cooling plates will be placed at the periphery of the stations. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

5G MIMO Conformal Microstrip Antenna Design

Directory of Open Access Journals (Sweden)

Qian Wang

2017-01-01

Full Text Available With the development of wireless communication technology, 5G will develop into a new generation of wireless mobile communication systems. MIMO (multiple-input multiple-output technology is expected to be one of the key technologies in the field of 5G wireless communications. In this paper, 4 pairs of microstrip MIMO conformal antennas of 35 GHz have been designed. Eight-element microstrip Taylor antenna array with series-feeding not only achieves the deviation of the main lobe of the pattern but also increases the bandwidth of the antenna array and reduces sidelobe. MIMO antennas have been fabricated and measured. Measurement results match the simulation results well. The return loss of the antenna at 35 GHz is better than 20 dB, the first sidelobe level is −16 dB, and the angle between the main lobe and the plane of array is 60°.

ATLAS silicon module assembly and qualification tests at IFIC Valencia

International Nuclear Information System (INIS)

Bernabeu, J; Civera, J V; Costa, M J; Escobar, C; Fuster, J; Garcia, C; Garcia-Navarro, J E; Gonzalez, F; Gonzalez-Sevilla, S; Lacasta, C; Llosa, G; Marti-Garcia, S; Minano, M; Mitsou, V A; Modesto, P; Nacher, J; Rodriguez-Oliete, R; Sanchez, F J; Sospedra, L; Strachko, V

2007-01-01

ATLAS experiment, designed to probe the interactions of particles emerging out of proton proton collisions at energies of up to 14 TeV, will assume operation at the Large Hadron Collider (LHC) at CERN in 2007. This paper discusses the assembly and the quality control tests of forward detector modules for the ATLAS silicon microstrip detector assembled at the Instituto de Fisica Corpuscular (IFIC) in Valencia. The construction and testing procedures are outlined and the laboratory equipment is briefly described. Emphasis is given on the module quality achieved in terms of mechanical and electrical stability

Planar edgeless silicon detectors for the TOTEM experiment

CERN Document Server

Ruggiero, G; Noschis, E

2007-01-01

Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

In-flight operations and status of the AMS-02 silicon tracker

OpenAIRE

Ambrosi, G.; Azzarello, P.; Battiston, R.; Bertucci, B.; Choumilov, E.; Choutko, V.; Crispoltoni, M.; Delgado, C.; Duranti, M.; Donnini, F.; D'Urso, D.; Fiandrini, E.; Formato, V.; Graziani, M.; Habiby, M.

2016-01-01

The AMS-02 detector is a large acceptance magnetic spectrometer operating on the International Space Station since May 2011. More than 60 billion events have been collected by the instrument as of today. One of the key subdetectors of AMS-02 is the microstrip silicon Tracker, designed to precisely measure the trajectory and absolute charge of cosmic rays in the GeV-TeV energy range. In addition, with the magnetic field, is also measuring the particle magnetic rigidity, defined as R = pc/Ze, a...

arXiv Signal coupling to embedded pitch adapters in silicon sensors

CERN Document Server

Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

2018-01-01

We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

CBM experiment. Characterization studies of the detector modules for silicon tracking syste

Directory of Open Access Journals (Sweden)

I. V. Panasenko

2013-09-01

Full Text Available The double-sided silicon microstrip detector prototypes with 50 μm pitch developed together with CiS, Germany, have been characterized in a 2.4 GeV/c proton beam at COSY, Forschungszentrum Jülich, Germany. Data analyses including reconstruction of 1-strip and 2-strip clusters have been performed. We have done the study of charge sharing in the interstrip gap. In particular it was found that there is a charge loss of less than 10 % in the interstrip gap. The calculated signal-to-noise ratio is around 19 for the p-side of the sensor and it is sufficient for hit reconstruction. Also the charge sharing function which allows more precise determination of the hit position in silicon sensor, have been reconstructed.

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Science.gov (United States)

Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

2017-07-01

Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

CERN Document Server

Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

2002-01-01

Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

Development of microstrip gas chamber and application to imaging gamma-ray detector

International Nuclear Information System (INIS)

Tanimori, T.; Minami, S.; Nagae, T.; Takahashi, T.; Miyagi, T.

1992-07-01

We have developed Microstrip Gas Chamber (MSGC) by using Multi-Chip technology which enables high-density assembly of bare LSI chips on a silicon board. Our MSGC was operated steadily with ∼ 10 3 gain more than one week. An energy resolution of 15% (FWHM) for 5.9 keV X-ray of 55 Fe was obtained. With very thin polyimide substrate of 16 μm thickness, two interesting phenomena were observed; one is a strong dependence of gains on the back plane potential, and the other is little time variation of gains. New type of MSGC with a guarding mask of a thin polyimide layer on the cathode edges has been examined to reduce incidental electrical discharges between anode and cathode strips. Furthermore, new approach to reduce the resistivity of the substrate has been examined. By these approaches, the stability of the high gain operation of ∼ 10 4 has been drastically improved. In addition, we discuss the possibility of the application of MSGC to the coded mask X-ray imaging detector for astrophysics. (author)

Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2016-01-01

For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

Slotted Circularly Polarized Microstrip Antenna for RFID Application

Directory of Open Access Journals (Sweden)

S. Kumar

2017-12-01

Full Text Available A single layer coaxial fed rectangular microstrip slotted antenna for circular polarization (CP is proposed for radio frequency identification (RFID application. Two triangular shaped slots and one rectangular slot along the diagonal axis of a square patch have been embedded. Due to slotted structure along the diagonal axis and less surface area, good quality of circular polarization has been obtained with the reduction in the size of microstrip antenna by 4.04 %. Circular polarization radiation performance has been studied by size and angle variation of diagonally slotted structures. The experimental result found for 10-dB return loss is 44 MHz with 10MHz of 3dB Axial Ratio (AR bandwidth respectively at the resonant frequency 910 MHz. The overall proposed antenna size including the ground plane is 80 mm x 80 mm x 4.572 mm.

Tuning of the silicon microstrip detector (SCT) digitization parameters at ATLAS

Energy Technology Data Exchange (ETDEWEB)

Vishwakarma, Akanksha [Humboldt University, Unter den Linden 6, 10099 Berlin (Germany)

2016-07-01

The increased luminosity of LHC in RUN-2 causes high radiation exposure of the ATLAS detector. This might bring about changes in the detector responses, especially of the pixel and the silicon strip detector. To study this, several digitization parameters are varied in the simulation and are analysed by comparing with data. In particular, the impact on the reconstructed cluster and track is considered. This investigation is used to optimize data-Monte Carlo agreement.

Analysis of superconducting microstrip resonator at various microwave power levels

International Nuclear Information System (INIS)

Srivastava, G.P.; Jacob, M.V.; Jayakumar, M.; Bhatnagar, P.K.; Kataria, N.D.

1997-01-01

The real and imaginary parts of the surface impedance of YBCO superconductors have been studied at different microwave power levels. Using the relations for the critical current density and the grain boundary resistance, a relation for calculating the power dependence of the surface resistance has been obtained. Also, a relation to find the resonant frequency of a superconducting microstrip resonator at various input power levels has been derived. Measurements have been carried out on various microstrip resonators to study the variation of surface resistance and resonant frequency at different rf power levels. The experimental results are in good agreement with theoretical results. copyright 1997 American Institute of Physics

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

CERN Document Server

Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

2005-01-01

Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

High Performance Circularly Polarized Microstrip Antenna

Science.gov (United States)

Bondyopadhyay, Probir K. (Inventor)

1997-01-01

A microstrip antenna for radiating circularly polarized electromagnetic waves comprising a cluster array of at least four microstrip radiator elements, each of which is provided with dual orthogonal coplanar feeds in phase quadrature relation achieved by connection to an asymmetric T-junction power divider impedance notched at resonance. The dual fed circularly polarized reference element is positioned with its axis at a 45 deg angle with respect to the unit cell axis. The other three dual fed elements in the unit cell are positioned and fed with a coplanar feed structure with sequential rotation and phasing to enhance the axial ratio and impedance matching performance over a wide bandwidth. The centers of the radiator elements are disposed at the corners of a square with each side of a length d in the range of 0.7 to 0.9 times the free space wavelength of the antenna radiation and the radiator elements reside in a square unit cell area of sides equal to 2d and thereby permit the array to be used as a phased array antenna for electronic scanning and is realizable in a high temperature superconducting thin film material for high efficiency.

Geometrical optimization of microstripe arrays for microbead magnetophoresis

DEFF Research Database (Denmark)

Henriksen, Anders Dahl; Rozlosnik, Noemi; Hansen, Mikkel Fougt

2015-01-01

Manipulation of magnetic beads plays an increasingly important role in molecular diagnostics. Magnetophoresis is a promising technique for selective transportation of magnetic beads in lab-on-a-chip systems. We investigate periodic arrays of exchange-biased permalloy microstripes fabricated using...

A Design of a Terahertz Microstrip Bandstop Filter with Defected Ground Structure

Directory of Open Access Journals (Sweden)

Arjun Kumar

2013-01-01

Full Text Available A planar microstrip terahertz (THz bandstop filter has been proposed with defected ground structure with high insertion loss (S21 in a stopband of −25.8 dB at 1.436 THz. The parameters of the circuit model have been extracted from the EM simulation results. A dielectric substrate of Benzocyclobutene (BCB is used to realize a compact bandstop filter using modified hexagonal dumbbell-shape defected ground structure (DB-DGS. In this paper, a defected ground structure topology is used in a λ/4, 50 Ω microstrip line at THz frequency range for compactness. No article has been reported on the microstrip line at terahertz frequency regime using DGS topology. The proposed filter can be used for sensing and detection in biomedical instruments in DNA testing. All the simulations/cosimulations are carried out using a full-wave EM simulator CST V.9 Microwave Studio, HFSS V.10, and Agilent Design Suite (ADS.

Design, simulation and analysis a microstrip antenna using PU-EFB substrate

Science.gov (United States)

Mahmud, S. N. S.; Jusoh, M. A.; Jasim, S. E.; Zamani, A. H.; Abdullah, M. H.

2018-04-01

A low cost, light weight and easy to fabricate are the most important factor for future antennas. Microstrip patch antennas offer these advantages and suitable for communication and sensor application. This paper presents a design of simple microstrip patch antenna working on operating frequency of 2.4 GHz. The designed process has been carried out using MATLAB and HFSS software by entering 2.3 for the dielectric constant of PU-EFB. The results showed that high return loss, low bandwidth and good antenna radiation efficiency of which are -21.98 dB, 0.28 dB and 97.33%, respectively.

Surface Effects in Segmented Silicon Sensors

OpenAIRE

Kopsalis, Ioannis

2017-01-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

Design of microstrip patch antennas using knowledge insertion through retraining

Science.gov (United States)

Divakar, T. V. S.; Sudhakar, A.

2018-04-01

The traditional way of analyzing/designing neural network is to collect experimental data and train neural network. Then, the trained neural network acts as global approximate function. The network is then used to calculate parameters for unknown configurations. The main drawback of this method is one does not have enough experimental data, cost of prototypes being a major factor [1-4]. Therefore, in this method the author collected training data from available approximate formulas with in full design range and trained the network with it. After successful training, the network is retrained with available measured results. This simple way inserts experimental knowledge into the network [5]. This method is tested for rectangular microstrip antenna and circular microstrip antenna.

Microstrip Patch Sensor for Salinity Determination.

Science.gov (United States)

Lee, Kibae; Hassan, Arshad; Lee, Chong Hyun; Bae, Jinho

2017-12-18

In this paper, a compact microstrip feed inset patch sensor is proposed for measuring the salinities in seawater. The working principle of the proposed sensor depends on the fact that different salinities in liquid have different relative permittivities and cause different resonance frequencies. The proposed sensor can obtain better sensitivity to salinity changes than common sensors using conductivity change, since the relative permittivity change to salinity is 2.5 times more sensitive than the conductivity change. The patch and ground plane of the proposed sensor are fabricated by conductive copper spray coating on the masks made by 3D printer. The fabricated patch and the ground plane are bonded to a commercial silicon substrate and then attached to 5 mm-high chamber made by 3D printer so that it contains only 1 mL seawater. For easy fabrication and testing, the maximum resonance frequency was selected under 3 GHz and to cover salinities in real seawater, it was assumed that the salinity changes from 20 to 35 ppt. The sensor was designed by the finite element method-based ANSYS high-frequency structure simulator (HFSS), and it can detect the salinity with 0.01 ppt resolution. The designed sensor has a resonance frequency separation of 37.9 kHz and reflection coefficients under -20 dB at the resonant frequencies. The fabricated sensor showed better performance with average frequency separation of 48 kHz and maximum reflection coefficient of -35 dB. By comparing with the existing sensors, the proposed compact and low-cost sensor showed a better detection capability. Therefore, the proposed patch sensor can be utilized in radio frequency (RF) tunable sensors for salinity determination.

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

KAUST Repository

Sallam, M. O.

2011-07-01

Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

RD50 Collaboration overview: Development of new radiation hard detectors

Energy Technology Data Exchange (ETDEWEB)

Kuehn, S., E-mail: susanne.kuehn@cern.ch

2016-07-11

Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors. - Highlights: • The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for high luminosity collider experiments. • The collaboration investigates defect, material and detector characterization, the development of new structures and full detector systems. • Results of measured data of n-in-p type sensors allow recommendations for silicon tracking detectors at the HL-LHC. • The charge multiplication effect was investigated to allow its exploitation and resulted in new structures like LGAD sensors. • New sensor types like slim and active edge sensors, 3D detectors, and lately HVCMOS devices were developed in the active collaboration.

The Silicon Vertex Detector for b-tagging at Belle II

International Nuclear Information System (INIS)

Valentan, M.

2013-01-01

The Belle experiment at KEK (Tsukuba, Japan) was successfully operated from 1999 until 2010 and confirmed the theoretical predictions of CP violation. In order to increase the beam intensity, a major upgrade of the KEKB collider is foreseen until 2015. The final goal is to reach a luminosity of 8 x 10 35 cm -2 s -1 , which is about 40 times higher than the previous peak value. This also implies changes to the Belle detector and its innermost tracking subdetector, the SVD (Silicon Vertex Detector), in particular. The SVD will be completely replaced, as it had already operated close to its limits in the past. All other subsystems will also be upgraded. This leads to the new Belle II experiment. The aim of Belle II is to search for deviations from the Standard Model of particle physics by providing extremely precise measurements of rare particle decays, thus representing a complementary approach to the direct searches performed at high energy hadron colliders. The upgraded SuperKEKB machine will collide electrons and positrons at the center-of-mass energy of excited states of the Y-particle, which hereafter decays to a B meson and its anti-particle. The decay vertices of these mesons have to be precisely measured by the Belle II SVD, together with the PXD (PiXel Detector) and the CDC (Central Drift Chamber). This allows the measurement of time-dependent, mixing-induced CP asymmetry. In addition, the SVD measures vertex information in other decay channels involving D meson and tau lepton decays. Since the collision energy is quite low (around 10 GeV), the emerging particles have low momentum and are subject to strong multiple scattering when traversing material. Therefore, all sensors of the Belle II SVD have to be optimised in terms of material thickness, while preserving high signal yield and position measurement accuracy. This will be possible by the development of thin, double-sided silicon microstrip sensors. This PhD thesis includes the physics motivation for

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

International Nuclear Information System (INIS)

Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

Energy Technology Data Exchange (ETDEWEB)

Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

2010-01-01

We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

International Nuclear Information System (INIS)

Strohaecker, T.R.; Nobrega, M.C.S.

1989-01-01

The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

An improved detector response simulation for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Malygina, Hanna [Goethe University, Frankfurt (Germany); Friese, Volker [GSI, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter experiment(CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component the Silicon Tracking System (STS) is build from double-sided micro-strip sensors. To achieve realistic simulations the response of the silicon strip sensors should be precisely included in the digitizer which simulates a complete chain of physical processes caused by charged particles traversing the detector, from charge creation in silicon to a digital output signal. The new version of the STS digitizer comprises in addition non-uniform energy loss distributions (according to the Urban theory), thermal diffusion and charge redistribution over the read-out channels due to interstrip capacitances. The improved response simulation was tested with parameters reproducing the anticipated running conditions of the CBM experiment. Two different method for cluster finding were used. The results for hit position residuals, cluster size distribution, as well as for some other parameters of reconstruction quality are presented. The achieved advance is assessed by a comparison with the previous, simpler version of the STS detector response simulation.

A test-bench for measurement of electrical static parameters of strip silicon detectors

International Nuclear Information System (INIS)

Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

CERN Document Server

Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

Cabling for an SSC silicon tracking system

International Nuclear Information System (INIS)

Ziock, H.; Boissevain, J.; Cooke, B.; Miller, W.

1990-01-01

As part of the Superconducting Super Collider Laboratory (SSCL) funded silicon tracking subsystem R ampersand D program, we examine the problems associated with cabling such a system. Different options for the cabling plant are discussed. A silicon microstrip tracking detector for an SSC experiment is an extremely complex system. The system consists of approximately 10 7 detector channels, each of which requires a communication link with the outside world and connections to the detector bias voltage supply, to a DC power supply for the onboard electronics, and to an adjustable discrimination level. The large number of channels and the short time between beam interactions (16 nanoseconds) dictates the need for high speed and large bandwidth communication channels, and a power distribution system that can handle the high current draw of the electronics including the large AC component due to their switching. At the same time the constraints imposed by the physics measurements require that the cable plant have absolutely minimal mass and radiation length. 4 refs., 2 figs

Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

CERN Document Server

Allport, P.P

2012-01-01

The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their pro...

Evaluation of the x-ray response of a position-sensitive microstrip detector with an integrated readout chip

International Nuclear Information System (INIS)

Rossington, C.; Jaklevic, J.; Haber, C.; Spieler, H.; Reid, J.

1990-08-01

The performance of an SVX silicon microstrip detector and its compatible integrated readout chip have been evaluated in response to Rh Kα x-rays (average energy 20.5 keV). The energy and spatial discrimination capabilities, efficient data management and fast readout rates make it an attractive alternative to the CCD and PDA detectors now being offered for x-ray position sensitive diffraction and EXAFS work. The SVX system was designed for high energy physics applications and thus further development of the existing system is required to optimize it for use in practical x-ray experiments. For optimum energy resolution the system noise must be decreased to its previously demonstrated low levels of 2 keV FWHM at 60 keV or less, and the data handling rate of the computer must be increased. New readout chips are now available that offer the potential of better performance. 15 refs., 7 figs

Analysis of Rectangular Microstrip Antennas with Air Substrates ...

African Journals Online (AJOL)

This paper presents an analysis of rectangular microstrip antennas with air substrates. The effect of the substrate thickness on the bandwidth and the efficiency are examined. An additional thin layer supporting the dielectric material is added to the air substrate in order to make the antenna mechanically rigid and easy to ...

A new micro-strip tracker for the new generation of experiments at hadron colliders

International Nuclear Information System (INIS)

Dinardo, Mauro E.; Milan U.

2005-01-01

This thesis concerns the development and characterization of a prototype Silicon micro-strip detector that can be used in the forward (high rapidity) region of a hadron collider. These detectors must operate in a high radiation environment without any important degradation of their performance. The innovative feature of these detectors is the readout electronics, which, being completely data-driven, allows for the direct use of the detector information at the lowest level of the trigger. All the particle hits on the detector can be readout in real-time without any external trigger and any particular limitation due to dead-time. In this way, all the detector information is available to elaborate a very selective trigger decision based on a fast reconstruction of tracks and vertex topology. These detectors, together with the new approach to the trigger, have been developed in the context of the BTeV RandD program; our aim was to define the features and the design parameters of an optimal experiment for heavy flavour physics at hadron colliders

Dual-polarization, wideband microstrip antenna array for airborne C-band SAR

DEFF Research Database (Denmark)

Granholm, Johan; Skou, Niels

2000-01-01

The paper describes the development of a C-band, dual linear polarization wideband antenna array, for use in the next-generation of the Danish airborne polarimetric synthetic aperture radar (SAR) system. The array is made of probe-fed, stacked microstrip patches. The design and performance of the...... of the basic stacked patch element, operating from 4.9 GHz to 5.7 GHz, and a 2×2 element test array of these, are described.......The paper describes the development of a C-band, dual linear polarization wideband antenna array, for use in the next-generation of the Danish airborne polarimetric synthetic aperture radar (SAR) system. The array is made of probe-fed, stacked microstrip patches. The design and performance...

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

A study on the effect of silicon content on mechanical properties

International Nuclear Information System (INIS)

Kwon, C.T.; Nam, T.W.; Lee, S.I.

1978-01-01

In Al-Si alloy, the variation of mechanical properties with silicon contents was investigated the silicon content being varied from 5% to 25%, and the effects of additives and refining elements were also studied. The results obtained are as follows: 1) Sodium treatment made the primary silicon crystals refined and spheroidized, and made the matrix structure intensified. The effect of P treatment on refining primary silicon crystals was greater then that of Na. 2) Tensile strength showed the maximum value at near the eutectic composition and was improved considerably by addition of Mg and treatment with Na. 3) The variation of matrix hardness with silicon contents was not perceptible and the hardness was improved by addition of Mg and treatment with Na. (author)

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Microstrip Patch Sensor for Salinity Determination

Directory of Open Access Journals (Sweden)

Kibae Lee

2017-12-01

Full Text Available In this paper, a compact microstrip feed inset patch sensor is proposed for measuring the salinities in seawater. The working principle of the proposed sensor depends on the fact that different salinities in liquid have different relative permittivities and cause different resonance frequencies. The proposed sensor can obtain better sensitivity to salinity changes than common sensors using conductivity change, since the relative permittivity change to salinity is 2.5 times more sensitive than the conductivity change. The patch and ground plane of the proposed sensor are fabricated by conductive copper spray coating on the masks made by 3D printer. The fabricated patch and the ground plane are bonded to a commercial silicon substrate and then attached to 5 mm-high chamber made by 3D printer so that it contains only 1 mL seawater. For easy fabrication and testing, the maximum resonance frequency was selected under 3 GHz and to cover salinities in real seawater, it was assumed that the salinity changes from 20 to 35 ppt. The sensor was designed by the finite element method-based ANSYS high-frequency structure simulator (HFSS, and it can detect the salinity with 0.01 ppt resolution. The designed sensor has a resonance frequency separation of 37.9 kHz and reflection coefficients under −20 dB at the resonant frequencies. The fabricated sensor showed better performance with average frequency separation of 48 kHz and maximum reflection coefficient of −35 dB. By comparing with the existing sensors, the proposed compact and low-cost sensor showed a better detection capability. Therefore, the proposed patch sensor can be utilized in radio frequency (RF tunable sensors for salinity determination.

Design and Analysis of a Triple Stop-band Filter Using Ratioed Periodical Defected Microstrip Structure

Science.gov (United States)

Jiang, Tao; Wang, Yanyan; Li, Yingsong

2017-07-01

In this paper, a triple stop-band filter with a ratioed periodical defected microstrip structure is proposed for wireless communication applications. The proposed ratioed periodical defected microstrip structures are spiral slots, which are embedded into a 50 Ω microstrip line to obtain multiple stop-bands. The performance of the proposed triple stop-band filter is investigated numerically and experimentally. Moreover, the equivalent circuit model of the proposed filter is also established and discussed. The results are given to verify that the proposed triple stop-band filter has three stop bands at 3.3 GHz, 5.2 GHz, 6.8 GHz to reject the unwanted signals, which is promising for integrating into UWB communication systems to efficiently prevent the potential interferences from unexpected narrowband signals such as WiMAX, WLAN and RFID communication systems.

Frequency scanning microstrip antennas

DEFF Research Database (Denmark)

Danielsen, Magnus; Jørgensen, Rolf

1979-01-01

The principles of using radiating microstrip resonators as elements in a frequency scanning antenna array are described. The resonators are cascade-coupled. This gives a scan of the main lobe due to the phase-shift in the resonator in addition to that created by the transmission line phase......-shift. Experimental results inX-band, in good agreement with the theory, show that it is possible to scan the main lobe an angle ofpm30degby a variation of the frequencypm300MHz, and where the 3 dB beamwidth is less than10deg. The directivity was 14.7 dB, while the gain was 8.1 dB. The efficiency might be improved...

Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

International Nuclear Information System (INIS)

Ziock, H.J.; Holzscheiter, K.; Morgan, A.; Palounek, A.P.T.; Ellison, J.; Heinson, A.P.; Mason, M.; Wimpenny, S.J.; Barberis, E.; Cartiglia, N.; Grillo, A.; O'Shaughnessy, K.; Rahn, J.; Rinaldi, P.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Webster, A.; Wichmann, R.; Wilder, M.; Coupal, D.; Pal, T.

1993-01-01

The silicon microstrip detectors that will be used in the SDC experiment at the Superconducting Super Collider (SSC) will be exposed to very large fluences of charged particles, neutrons, and gammas. The authors present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. They study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from -10 degrees C to +50 degrees C, and as a function of 800 MeV proton fluence up to 1.5 x 10 14 p/cm 2 . They express the pronounced temperature dependencies in a simple model in terms of two annealing time constants which depend exponentially on the temperature

An UWB LNA Design with PSO Using Support Vector Microstrip Line Model

Directory of Open Access Journals (Sweden)

Salih Demirel

2015-01-01

Full Text Available A rigorous and novel design procedure is constituted for an ultra-wideband (UWB low noise amplifier (LNA by exploiting the 3D electromagnetic simulator based support vector regression machine (SVRM microstrip line model. First of all, in order to design input and output matching circuits (IMC-OMC, source ZS and load ZL termination impedance of matching circuit, which are necessary to obtain required input VSWR (Vireq, noise (Freq, and gain (GTreq, are determined using performance characterisation of employed transistor, NE3512S02, between 3 and 8 GHz frequencies. After the determination of the termination impedance, to provide this impedance with IMC and OMC, dimensions of microstrip lines are obtained with simple, derivative-free, easily implemented algorithm Particle Swarm Optimization (PSO. In the optimization of matching circuits, highly accurate and fast SVRM model of microstrip line is used instead of analytical formulations. ADCH-80a is used to provide ultra-wideband RF choking in DC bias. During the design process, it is aimed that Vireq = 1.85, Freq = Fmin, and GTreq = GTmax all over operating frequency band. Measurements taken from the realized LNA demonstrate the success of this approximation over the band.

A time projection chamber with microstrip read-out

International Nuclear Information System (INIS)

Bootsma, T.M.V.; Van den Brink, A.; De Haas, A.P.; Kamermans, R.; Kuijer, P.G.; De Laat, C.T.A.M.; Van Nieuwenhuizen, G.J.; Ostendorf, R.; Snellings, R.J.M.; Twenhoefel, C.J.W.; Peghaire, A.

1994-01-01

The design and testing of a novel detector for heavy-ion physics in the intermediate-energy regime is described. This detector consists of a large drift chamber with microstrip read-out in combination with thick plastic scintillators. With this system particle identification and energy determination with high spatial resolution and multiple hit capacity is achieved. ((orig.))

Gas microstrip detectors based on flexible printed circuit

International Nuclear Information System (INIS)

Salomon, M.; Crowe, K.; Faszer, W.; Lindsay, P.; Curran Maier, J.M.

1995-09-01

We have studied the properties of a new type of Gas Microstrip Counter built using flexible printed circuit technology. We describe the manufacturing procedures, the assembly of the device, as well as its operation under a variety of conditions, gases and types of radiation. We also describe two new passivation materials, Tantalum and Niobium, which produce effective surfaces. (author)

Microfabrication of hard x-ray lenses

DEFF Research Database (Denmark)

Stöhr, Frederik

This thesis deals with the development of silicon compound refractive lenses (Si-CRLs) for shaping hard x-ray beams. The CRLs are to be fabricated using state of the art microfabrication techniques. The primary goal of the thesis work is to produce Si-CRLs with considerably increased structure...... and characterized with respect to their shape. Their optical performances were tested at the European Synchrotron Radiation Facility (ESRF). Two 1D-focusing Si-CRLs suitable as condensers in hard-XRM were developed utilizing the aforementioned two different strategies. The first Si-condenser showed focusing of a 56...... of space for sample surroundings and ensure low-divergent and wide x-ray beams with narrow waists. Both results are substantial improvements to what was available at the start of this thesis work. The challenge of making x-ray objectives in silicon by interdigitation of lenslets alternately focusing...

The Silicon Tracking System of the CBM experiment at FAIR

Directory of Open Access Journals (Sweden)

Teklishyn Maksym

2018-01-01

Full Text Available The Silicon Tracking System (STS is the central detector in the Compressed Baryonic Matter (CBM experiment at FAIR. Operating in the 1Tm dipole magnetic field, the STS will enable pile-up free detection and momentum measurement of the charged particles originating from beam-target nuclear interactions at rates up to 10 MHz. The STS consists of 8 tracking stations based on double-sided silicon micro-strip sensors equipped with fast, self-triggering read-out electronics. With about two million read-out channels, the STS will deliver a high-rate stream of time-stamped data that is transferred to a computing farm for on-line event determination and analysis. The functional building block is a detector module consisting of a sensor, micro-cables and two front-end electronics boards. In this contribution, the development status of the STS components and the system integration is discussed and an outlook on the detector construction is given.

Study of gluing and wire bonding for the Belle II Silicon Vertex Detector

International Nuclear Information System (INIS)

Kang, K.H.; Hara, K.; Higuchi, T.; Hyun, H.J.; Jeon, H.B.; Joo, C.W.; Kah, D.H.; Kim, H.J.; Mibe, T.; Onuki, Y.; Park, H.; Rao, K.K.; Sato, N.; Shimizu, N.; Tanida, K.; Tsuboyama, T.; Uozumi, S.

2014-01-01

This paper describes an investigation into gluing and wire bonding for assembling the Silicon Vertex Detector (SVD) for the Belle II experiment at KEK in Japan. Optimizing the gluing of the silicon microstrip sensors, the support frame, and the readout flex cables is important for achieving the required mechanical precision. The wire bonding between the sensors and the readout electronic chips also needs special care to maximize the physics capability of the SVD. The silicon sensors and signal fan out flex circuits (pitch adapters) are glued and connected using wire bonding. We determine that gluing quality is important for achieving good bonding efficiency. The standard deviation in the glue thickness for the best result is measured to be 3.11 μm. Optimal machine parameters for wire bonding are determined to be 70 mW power, 20 gf force, and 20 ms for the pitch adapter and 60 mW power, 20 gf force, and 20 ms for the silicon strip sensors; these parameters provide a pull force of (10.92±0.72) gf. With these settings, 75% of the pitch adapters and 25% of the strip sensors experience the neck-broken type of break

Full Ka Band Waveguide-to-Microstrip Inline Transition Design

Science.gov (United States)

Li, Jianxing; Li, Lei; Qiao, Yu; Chen, Juan; Chen, Jianzhong; Zhang, Anxue

2018-05-01

In this paper, a compact and broadband inline waveguide-to-microstrip transition is proposed to cover the full Ka band. The transition can be segmented from the electric point of view into three building blocks, comprising a microstrip line to rectangular coaxial line, a wedged rectangular coaxial line to ridged waveguide, and a final tapered ridged waveguide impedance transformer to standard waveguide. Both good electrical performance and simple modular assembly without any soldering have been simultaneously obtained. The validation of the design concept has been conducted by numerical simulations and experimental measurements. The experimental results of a fabricated back-to-back transition prototype coincide with the simulated results. It shows that the proposed transition achieves good return loss of lower than 15.5 dB and low insertion loss with a fluctuation between 0.23 to 0.60 dB across the entire Ka band. Details of design considerations and operation mechanism as well as simulation and measurement results are presented.

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

Science.gov (United States)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

Design of Miniaturized Dual-Band Microstrip Antenna for WLAN Application

Science.gov (United States)

Yang, Jiachen; Wang, Huanling; Lv, Zhihan; Wang, Huihui

2016-01-01

Wireless local area network (WLAN) is a technology that combines computer network with wireless communication technology. The 2.4 GHz and 5 GHz frequency bands in the Industrial Scientific Medical (ISM) band can be used in the WLAN environment. Because of the development of wireless communication technology and the use of the frequency bands without the need for authorization, the application of WLAN is becoming more and more extensive. As the key part of the WLAN system, the antenna must also be adapted to the development of WLAN communication technology. This paper designs two new dual-frequency microstrip antennas with the use of electromagnetic simulation software—High Frequency Structure Simulator (HFSS). The two antennas adopt ordinary FR4 material as a dielectric substrate, with the advantages of low cost and small size. The first antenna adopts microstrip line feeding, and the antenna radiation patch is composed of a folded T-shaped radiating dipole which reduces the antenna size, and two symmetrical rectangular patches located on both sides of the T-shaped radiating patch. The second antenna is a microstrip patch antenna fed by coaxial line, and the size of the antenna is diminished by opening a stepped groove on the two edges of the patch and a folded slot inside the patch. Simulation experiments prove that the two designed antennas have a higher gain and a favourable transmission characteristic in the working frequency range, which is in accordance with the requirements of WLAN communication. PMID:27355954

A new silicon tracker for proton imaging and dosimetry

Energy Technology Data Exchange (ETDEWEB)

Taylor, J.T., E-mail: jtaylor@hep.ph.liv.ac.uk [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Waltham, C. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Price, T. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Allinson, N.M. [Laboratory of Vision Engineering, School of Computer Science, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Allport, P.P. [School of Physics and Astronomy, University of Birmingham, Birmingham B25 2TT (United Kingdom); Casse, G.L. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom); Kacperek, A. [Douglas Cyclotron, The Clatterbridge Cancer Centre NHS Foundation Trust, Clatterbridge Road, Bebington, Wirral CH63 4JY (United Kingdom); Manger, S. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Smith, N.A.; Tsurin, I. [Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE (United Kingdom)

2016-09-21

For many years, silicon micro-strip detectors have been successfully used as tracking detectors for particle and nuclear physics experiments. A new application of this technology is to the field of particle therapy where radiotherapy is carried out by use of charged particles such as protons or carbon ions. Such a treatment has been shown to have advantages over standard x-ray radiotherapy and as a result of this, many new centres offering particle therapy are currently under construction around the world today. The Proton Radiotherapy, Verification and Dosimetry Applications (PRaVDA) consortium are developing instrumentation for particle therapy based upon technology from high-energy physics. The characteristics of a new silicon micro-strip tracker for particle therapy will be presented. The array uses specifically designed, large area sensors with technology choices that follow closely those taken for the ATLAS experiment at the HL-LHC. These detectors will be arranged into four units each with three layers in an x–u–v configuration to be suitable for fast proton tracking with minimal ambiguities. The sensors will form a tracker capable of tracing the path of ~200 MeV protons entering and exiting a patient allowing a new mode of imaging known as proton computed tomography (pCT). This will aid the accurate delivery of treatment doses and in addition, the tracker will also be used to monitor the beam profile and total dose delivered during the high fluences used for treatment. We present here details of the design, construction and assembly of one of the four units that will make up the complete tracker along with its characterisation using radiation tests carried out using a {sup 90}Sr source in the laboratory and a 60 MeV proton beam at the Clatterbridge Cancer Centre.

LHCb Silicon Tracker DAQ and DCS Online Systems

CERN Multimedia

Buechler, A; Rodriguez, P

2009-01-01

The LHCb experiment at the Large Hadron Collider (LHC) at CERN in Geneva Switzerland is specialized on precision measurements of b quark decays. The Silicon Tracker (ST) contributes a crucial part in tracking the particle trajectories and consists of two silicon micro-strip detectors, the Tracker Turicensis upstream of the LHCb magnet and the Inner Tracker downstream. The radiation and the magnetic field represent new challenges for the implementation of a Detector Control System (DCS) and the data acquisition (DAQ). The DAQ has to deal with more than 270K analog readout channels, 2K readout chips and real time DAQ at a rate of 1.1 MHz with data processing at TELL1 level. The TELL1 real time algorithms for clustering thresholds and other computations run on dedicated FPGAs that implement 13K configurable parameters per board, in total 1.17 K parameters for the ST. After data processing the total throughput amounts to about 6.4 Gbytes from an input data rate of around ~337 Gbytes per second. A finite state ma...

Development of GaAs Detectors for Physics at the LHC

CERN Multimedia

Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

2002-01-01

% RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

International Nuclear Information System (INIS)

Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

2016-01-01

Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

International Nuclear Information System (INIS)

Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

CERN Document Server

Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

RTV Silicone Rubber Degradation Induced by Temperature Cycling

Directory of Open Access Journals (Sweden)

Xishan Wen

2017-07-01

Full Text Available Room temperature vulcanized (RTV silicone rubber is extensively used in power system due to its hydrophobicity and hydrophobicity transfer ability. Temperature has been proven to markedly affect the performance of silicone rubbers. This research investigated the degradation of RTV silicone rubber under temperature cycling treatment. Hydrophobicity and its transfer ability, hardness, functional groups, microscopic appearance, and thermal stability were analyzed using the static contact angle method, a Shore A durometer, Fourier transform infrared spectroscopy (FTIR, scanning electron microscopy (SEM, and thermogravimetry (TG, respectively. Some significant conclusions were drawn. After the temperature was cycled between −25 °C and 70 °C, the hydrophobicity changed modestly, but its transfer ability changed remarkably, which may result from the competition between the formation of more channels for the transfer of low molecular weight (LMW silicone fluid and the reduction of LMW silicone fluid in the bulk. A hardness analysis and FTIR analysis demonstrated that further cross-linking reactions occurred during the treatment. SEM images showed the changes in roughness of the RTV silicone rubber surfaces. TG analysis also demonstrated the degradation of RTV silicone rubber by presenting evidence that the content of organic materials decreased during the temperature cycling treatment.

A fast ADC system for silicon μstrips readout

International Nuclear Information System (INIS)

Inzani, P.; Pedrini, D.; Sala, S.

1986-01-01

A new fast ADC module has been designed. It is part of a large readout system for a high resolution vertex detector consisting of 12 silicon microstrip planes with more than 8000 channels. The module employs a set of monolithic gated integrators on input (LeCroy MIQ 401) multiplexed on a single 8 bit FADC (Thompson EFX8308). A built-in preprocessing, performed through look up tables, accomplishes equalization and reduction of the data and makes high level trigger feasible. As an additional feature, fast histogramming of all the channels in parallel has been made possible with an internal memory. Special care has been paid to realize a low cost and low power consumption system

Radiography imaging by 64 and 128 micro-strips crystalline detectors at different X-ray energies

International Nuclear Information System (INIS)

Leyva, A.; Cabal, A.; Montano, L. M.; Fontaine, M.; Mora, R. de la; Padilla, F.

2006-01-01

This paper summarizes some results obtained in the evaluation of the performance of position sensitive detectors in track reconstruction in particle physics experiments. Crystalline silicon micro-strips detectors with 64 and 128 channels and 100 μm pitch were used to obtain radiographic digital images of different objects. The more relevant figures for spectrometry applications were measured and reported. Two-dimensional images were obtained by scanning the object with a collimated beam using different source-target-detector positioning and three sources of X-rays (8.04, 18.55 and 22.16 keV). The counts acquired by each strip correspond to a particular collimator position during the scan, thus serving to reconstruct the image of the exposed to X-ray object and to reveal its internal structure. The use of some techniques for image processing allow the further improvement of the radiography quality. The preliminary results obtained using in-house made and accreditation mammography phantoms allow to infer that such detectors can be successfully introduced in the digital mammography practice. (Author)

Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

Czech Academy of Sciences Publication Activity Database

Böhm, Jan; Mikeštíková, Marcela; Affolder, A.A.; Allport, P.P.; Bates, R.; Betancourt, C.; Brown, H.; Buttar, C.; Carter, J. R.; Casse, G.

2011-01-01

Roč. 636, č. 1 (2011), "S104"-"S110" ISSN 0168-9002 R&D Projects: GA MŠk LA08032 Institutional research plan: CEZ:AV0Z10100502 Keywords : silicon * micro-strip * ATLAS ID upgrade * SLHC * leakage current * depletion voltage * electrical characteristics * coupling capacitance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.207, year: 2011 http://dx.doi.org/10.1016/j.nima.2010.04.093

Performance tests of developed silicon strip detector by using a 150 GeV electron beam

International Nuclear Information System (INIS)

Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

2008-01-01

We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

Study of low-mass readout cables for the CBM Silicon Tracking System

Energy Technology Data Exchange (ETDEWEB)

Singla, Minni [Goethe Univ. Frankfurt am Main (Germany); GSI, Darmstadt (Germany); Collaboration: CBM-Collaboration

2013-07-01

The study of thin multi-line readout cables will be reported. The application is the Silicon Tracking System (STS) of the fixed-target heavy-ion experiment Compressed Baryonic Matter (CBM), under design at the forthcoming accelerator centre FAIR in Germany. These cables will bridge the distance between the microstrip sensors and the signal processing electronics placed at the periphery of the silicon tracking stations. Finite element simulations (using the TCAD package RAPHAEL) have been used to optimize the cables towards minimum possible Equivalent Noise Charge (ENC). Various trace geometries and trace materials have been explored. SPICE modelling has been implemented in Sentaurus Device to study the transmission loss in the cables. The simulations have been validated with measurements. Charge loss in cables of different lengths was determined by injecting charge pulses of known amplitude. An optimized cable design is reported yielding minimum ENC, material budget and transmission loss.

Commissioning of the LHCb Silicon Tracker using data from the LHC injection tests

CERN Document Server

Knecht, M; Blanc, F; Bettler, M-O; Conti, G; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Perrin, A; Potterat, C; Schneider, O; Tran, M; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Chiapolini, N; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Van Tilburg, J; Tobin, M; Vollhardt, A; Adeva, B; Fungueiri no Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Rodriguez Perez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2011-01-01

LHCb is a single-arm forward spectrometer dedicated to the study of the CP-violation and rare decays in the b-quark sector. An efficient and high precision tracking system is a key requirement of the experiment. The LHCb Silicon Tracker Project consists of two sub-detectors that make use of silicon micro-strip technology: the Tracker Turicensis located upstream of the spectrometer magnet and the Inner Tracker which covers the innermost part of the tracking stations after the magnet. In total an area of 12 m^2 is covered by silicon. In September 2008 and June 2009, injection tests from the SPS to the LHC were performed. Bunches of order 5x10^9 protons were dumped onto a beam stopper (TED) located upstream of LHCb. This produced a spray of ~10 GeV muons in the LHCb detector. Though the occupancy in this environment is relatively large, these TED runs have allowed a first space and time alignment of the tracking system. Results of these studies together and the overall detector performance obtained in the TED ru...

Performance evaluation of the analogue front-end and ADC prototypes for the Gotthard-II development

Science.gov (United States)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2017-12-01

Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.

Noise and signal processing in a microstrip detector with a time variant readout system

International Nuclear Information System (INIS)

Cattaneo, P.W.

1995-01-01

This paper treats the noise and signal processing by a time variant filter in a microstrip detector. In particular, the noise sources in the detector-electronics chain and the signal losses that cause a substantial decrease of the original signal are thoroughly analyzed. This work has been motivated by the analysis of the data of the microstrip detectors designed for the ALEPH minivertex detector. Hence, even if the discussion will be kept as general as possible, concrete examples will be presented referring to the specific ALEPH design. (orig.)

Temperature dependence of dynamical permeability characterization of magnetic thin films using shorted microstrip line probe

International Nuclear Information System (INIS)

Li, Xiling; Li, Chengyi; Chai, Guozhi

2017-01-01

A temperature dependence microwave permeability characterization system of magnetic thin film up to 10 GHz is designed and fabricated. This system can be used at temperatures ranging from room temperature to 200 °C, and is based on a shorted microstrip probe, which is made by microwave printed circuit board. Without contacting the magnetic thin films to the probe, the microwave permeability of the film can be detected without any limitations of sample size and with almost the same accuracy, as shown by comparison with the results obtained from a shorted microstrip transmission-line fixture. The complex permeability can be deduced by an analytical approach from the measured reflection coefficient of a strip line ( S 11 ) with and without a ferromagnetic film material on it. The procedures are the same with the shorted microstrip transmission-line method. The microwave permeability of an oblique deposited CoZr thin film was investigated with this probe. The results show that the room temperature dynamic permeability of the CoZr film is in good agreement with the results obtained from the established short-circuited microstrip perturbation method. The temperature dependence permeability results fit well with the Landau–Lifshitz–Gilbert equation. Development of the temperature-dependent measurement of the magnetic properties of magnetic thin film may be useful for the high-frequency application of magnetic devices at high temperatures. (paper)

Simply folded band chaos in a VHF microstrip oscillator

Energy Technology Data Exchange (ETDEWEB)

Blakely, Jonathan N. [US Army Research, Development, and Engineering Command, AMSRD-AMR-WS-ST, Redstone Arsenal, AL 35898 (United States)]. E-mail: jonathan.blakely@us.army.mil; Holder, J. Darryl [US Army Research, Development, and Engineering Command, AMSRD-AMR-WS-ST, Redstone Arsenal, AL 35898 (United States); Corron, Ned J. [US Army Research, Development, and Engineering Command, AMSRD-AMR-WS-ST, Redstone Arsenal, AL 35898 (United States); Pethel, Shawn D. [US Army Research, Development, and Engineering Command, AMSRD-AMR-WS-ST, Redstone Arsenal, AL 35898 (United States)

2005-10-10

We present experimental observations of a microstrip circuit that produces Roessler-like chaos with center frequency of 175 MHz. A simply folded band chaotic attractor is created through a period doubling route. The circuit provides an experimental realization of a chaotic neutral delay differential equation, a largely unexplored type of nonlinear dynamical system.

Linearity discontinuities in Xe-filled X-ray microstrip detectors

DEFF Research Database (Denmark)

Zavattini, G.; Feroci, M.; Budtz-Jørgensen, Carl

1997-01-01

A prototype Xe + 10% CH4 microstrip detector was used to study the K-edge discontinuity in the pulse-height distribution as a function of the energy of incident X-rays. The electronics used was such that a pulse-shape rejection could be made of K-fluorescence reabsorption in the detector. The mea...

Substrate-induced instability in gas microstrip detectors

International Nuclear Information System (INIS)

Bateman, J.E.; Connolly, J.F.

1992-12-01

The results of a programme of research into substrate-induced gain instability in gas microstrip detectors are reported. Information has been collected on a wide range of substrates including many commonly available glasses and ceramics. A theoretical model of the gain instability is proposed. While we have not yet found an acceptable substrate for the construction of high flux detectors our experience points to electronically conductive glasses as the most promising source of a stable substrate. (Author)

The Belle II silicon vertex detector assembly and mechanics

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S., E-mail: stefano.bettarini@pi.infn.it [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2017-02-11

The Belle II experiment at the asymmetric SuperKEKB collider in Japan will operate at an instantaneous luminosity approximately 50 times greater than its predecessor (Belle). The central feature of the experiment is a vertex detector comprising two layers of pixelated silicon detectors (PXD) and four layers of double-sided silicon microstrip detectors (SVD). One of the key measurements for Belle II is CP violation asymmetry in the decays of beauty and charm hadrons, which hinges on a precise charged-track vertex determination and low-momentum track measurement. Towards this goal, a proper assembly of the SVD components with precise alignment ought to be performed and the geometrical tolerances should be checked to fall within the design limits. We present an overview of the assembly procedure that is being followed, which includes the precision gluing of the SVD module components, wire-bonding of the various electrical components, and precision 3D coordinate measurements of the final SVD modules. Finally, some results from the latest test-beam are reported.

Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Yildirim, Eda

2017-02-15

In this thesis, the collected charge and the Lorentz angle on non-irradiated and the irradiated miniature of the current test silicon micro-strip sensors (ATLAS12) of the future ATLAS inner tracker are measured. The samples are irradiated up to 5 x 10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and some of them also measured after short-term annealing (80 min at 60 C). The measurements are performed at the DESY II test beam, which provides the advantage of tracking to suppress noise hits. The collected charge is measured at various bias voltages for each sample. The results are compared with the measurements performed using a Sr{sup 90} radioactive source. It is shown that the measurements with beam and radioactive source are consistent with each other, and the advantage of tracking at the beam measurements provides the measurement of collected charge on highly irradiated sensors at lower bias voltages. The Lorentz angle is measured for each sample at different magnetic field strengths between 0 T and 1 T, the results are extrapolated to 2 T, which is the magnetic field in the inner tracker of the ATLAS detector. Most of the measurements are performed at -500 V bias voltage, which is the planned operation bias voltage of the future strip tracker. Some samples are also measured at different bias voltages to observe the effect of bias voltage on the Lorentz angle. The signal reconstruction of the strip sensors are performed using the lowest possible signal-to-noise thresholds. For non-irradiated samples, the measured Lorentz angle agrees with the prediction of the BFK model. On the irradiated samples, the results suggest that the Lorentz angle decreases with increasing bias voltage due to the increasing electric field in the sensor. The Lorentz angle decreases with increasing irradiation level; however, if the sample is under-depleted, the effect of electric field dominates and the Lorentz angle increases. Once the irradiation level becomes too high, hence the collected charge

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Design of a Microstrip Bowtie Antenna for Indoor Radio-Communications

Directory of Open Access Journals (Sweden)

Fraga-Rosales Hector

2017-01-01

Full Text Available In this paper, a microstrip bowtie patch antenna (MBPA for wireless indoor communications is carried out. Here, a microstrip transmission-line feed network was designed in order to match the MBPA. The proposed antenna uses a ground plane with the aim of narrowing down the back lobes in comparison with bowtie sheet antennas, which radiation pattern is omni-directional. The far-field pattern of the antenna was simulated using a finite-element numerical algorithm and obtained by interpolation employing near-field equipment. The experimental results are described in detail intending to agree well with the simulated predictions. The antenna was designed, measured and built and its far field performance was evaluated with a 2.11 GHz resonant frequency. The azimuth and elevation antenna patterns, antenna gain and, the matching frequency were the main parameters obtained to analyze the antenna behaviour. The antenna has a gain approximately equal to 8.77 dBi and its beam-widths are higher than 100° in E plane.

Performance of microstrip and microgap gas detectors at high pressure

International Nuclear Information System (INIS)

Fraga, F.A.F.; Fraga, M.M.F.R.; Marques, R.F.; Margato, L.M.S.; Goncalo, J.R.; Policarpo, A.J.P.L.

1997-01-01

A study of the operation of microstrip and microgap detectors at various gas pressures up to 6 bar with Kr-CO 2 , Xe-CO 2 and Xe-CH 4 is presented. The data were collected with a microstrip (1000 μm pitch) and a microgap (200 μm pitch) detector using a clean chamber and gas system. It is shown that maximum gain is strongly dependent on pressure and gains as high as 9 x 10 3 were obtained with Kr-CO 2 at 6 bar with a MSGC. With the smaller-pitch MGC we could get a gain of 180 with Xe-CH 4 at 6 bar; the typical energy resolution at 22 keV being about 15%. From the present work one can conclude that microstructures can operate at high pressure and that their application in high-efficiency, low-granularity X-ray detectors with an energy range up to a few tens of keV can be seriously considered. (orig.)

Coherent quantum cascade laser micro-stripe arrays

Directory of Open Access Journals (Sweden)

G. M. de Naurois

2011-09-01

Full Text Available We have fabricated InP-based coherent quantum cascade laser micro-stripe arrays. Phase-locking is provided by evanescent coupling between adjacent stripes. Stripes are buried into semi-insulating iron doped InP. Lasing at room temperature is obtained at 8.4μm for stripe arrays comprising up to 16 emitters. Pure supermode emission is demonstrated via farfield measurements and simulations. The farfield pattern shows a dual-lobe emission, corroborating the predicted phase-locked antisymmetric supermode emission.

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Production and Quality Assurance of Detector Modules for the LHCb Silicon Tracker

CERN Document Server

Volyanskyy, D; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Sakhelashvili, T; Steiner, S; Straumann, U; Van Tilburg, J; Vollhardt, A; Wenger, A

2007-01-01

The LHCb experiment, which is currently under construction at the Large Hadron Collider~(CERN, Geneva), is designed to study $CP$ violation and find rare decays in the $B$ meson system. To achieve the physics goals the LHCb detector must have excellent tracking performance. An important element of the LHCb tracking system is the Silicon Tracker, which covers a sensitive surface of about 12~m$^2$ with silicon microstrip detectors and includes about 272k readout channels. It uses up to 132~cm long detector modules with readout strips of up to 38~cm in length and up to 57~cm long Kapton interconnects in between sensors and readout hybrids. The production of detector modules has been completed recently and the detector is currently under installation. A rigorous quality assurance programme has been performed to ensure that the detector modules meet the mechanical and electrical requirements and study their various characteristics. In this paper, the detector design, the module production steps, and the module qua...

EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

Energy Technology Data Exchange (ETDEWEB)

Arteche, F.; /CERN /Imperial Coll., London; Rivetta, C.; /SLAC

2006-06-06

The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

Beam tests with microstrip gas counters

International Nuclear Information System (INIS)

Landry, M.R.; Birchall, J.; Crow, K.; Davis, C.A.; Faszer, W.; Gan, L.; Lee, L.; van Oers, W.T.H.; Page, S.A.; Ramsay, W.D.; Salomon, M.

1994-10-01

We have measured the efficiency, timing and pulse heights in several types of microstrip Gas Chambers with plastic substrates passivated with a thin Nickel layer. We used as active gas mixtures Argon/Isobutane and CF 4 /Isobutane. We placed the detectors in a secondary beam at TRIUMF tuned to a momentum of 100 MeV/c of pions, muons and electrons. Preliminary results indicate good efficiency for minimum ionizing particles in Argon/Isobutane mixtures but lesser efficiency in CF 4 based gases indicating the importance of high quality preamplifiers to increase the signal to noise ratio. (author). 20 refs., 6 figs

Ka-Band Slot-Microstrip-Covered and Waveguide-Cavity-Backed Monopulse Antenna Array

Directory of Open Access Journals (Sweden)

Li-Ming Si

2014-01-01

Full Text Available A slot-microstrip-covered and waveguide-cavity-backed monopulse antenna array is proposed for high-resolution tracking applications at Ka-band. The monopulse antenna array is designed with a microstrip with 2×32 slots, a waveguide cavity, and a waveguide monopulse comparator, to make the structure simple, reduce the feeding network loss, and increase the frequency bandwidth. The 2×32 slot-microstrip elements are formed by a metal clad dielectric substrate and slots etched in the metal using the standard printed circuit board (PCB process with dimensions of 230 mm  ×  10 mm. The proposed monopulse antenna array not only maintains the advantages of the traditional waveguide slot antenna array, but also has the characteristics of wide bandwidth, high consistence, easy of fabrication, and low cost. From the measured results, it exhibits good monopulse characteristics, including the following: the maximum gains of sum pattern are greater than 24 dB, the 3 dB beamwidth of sum pattern is about 2.2 degrees, the sidelobe levels of the sum pattern are less than −18 dB, and the null depths of the difference pattern are less than −25 dB within the operating bandwidth between 33.65 GHz and 34.35 GHz for VSWR ≤ 2.

Size optimization for complex permeability measurement of magnetic thin films using a short-circuited microstrip line up to 30 GHz

Science.gov (United States)

Takeda, Shigeru; Naoe, Masayuki

2018-03-01

High-frequency permeability spectra of magnetic films were measured over a wideband frequency range of 0.1-30 GHz using a shielded and short-circuited microstrip line jig. In this measurement, spurious resonances had to be suppressed up to the highest frequency. To suppress these resonances, characteristic impedance of the microstrip line should approach 50 Ω at the junction between connector and microstrip line. The main factors dominating these resonances were structures of the jig and the sample. The dimensions were optimized in various experiments, and results demonstrated that the frequency could be raised to at least 20 GHz. For the transverse electromagnetic mode to transmit stably along the microstrip line, the preferred sample was rectangular, with the shorter side parallel to the line and the longer side perpendicular to it, and characteristic impedance strongly depended on the signal line width of the jig. However, too small a jig and sample led to a lower S/N ratio.

Poly-silicon quantum-dot single-electron transistors

International Nuclear Information System (INIS)

Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

2012-01-01

For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

Analysis and optimal design of Si microstrip detector with overhanging metal electrode

CERN Document Server

Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

2001-01-01

The harsh radiation environment to be encountered at LHC (large hadron collider) and RHIC (relativistic heavy ion collider) poses a challenging task for the fabrication of Si microstrip detectors. Due to high luminosities, detectors are required to sustain very high voltage operation well exceeding the bias voltage needed to fully deplete them. The "overhanging" metal contact is now a well established technique for improving the breakdown performance of the Si microstrip detector. Based on computer simulation, the influence of various physical and geometrical parameters on the electrical breakdown of the Si detectors equipped with metal overhangs is extensively analysed. Furthermore, optimization of design parameters is performed to achieve breakdown voltages close to maximum realizable values. The simulation results are found to be in good agreement with experimental data. (17 refs).

Effects of silicon cross section and neutron spectrum on the radial uniformity in neutron transmutation doping

International Nuclear Information System (INIS)

Kim, Haksung; Ho Pyeon, Cheol; Lim, Jae-Yong; Misawa, Tsuyoshi

2012-01-01

The effects of silicon cross section and neutron spectrum on the radial uniformity of a Si-ingot are examined experimentally with various neutron spectrum conditions. For the cross section effect, the numerical results using silicon single crystal cross section reveal good agreements with experiments within relative difference of 6%, whereas the discrepancy is approximately 20% in free-gas cross section. For the neutron spectrum effect, the radial uniformity in hard neutron spectrum is found to be more flattening than that in soft spectrum. - Highlights: ► The effects of silicon cross section and neutron spectrum on the radial uniformity in NTD were experimentally investigated. ► The numerical results using silicon single crystal cross section reveal good agreements. ► The radial uniformity in hard neutron spectrum was more flat than that in soft spectrum. ► The silicon single crystal cross section and hard neutron spectrum are recommended for numerical analyses and radial uniformity flattening in NTD, respectively.

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Singularity Processing Method of Microstrip Line Edge Based on LOD-FDTD

Directory of Open Access Journals (Sweden)

Lei Li

2014-01-01

Full Text Available In order to improve the performance of the accuracy and efficiency for analyzing the microstrip structure, a singularity processing method is proposed theoretically and experimentally based on the fundamental locally one-dimensional finite difference time domain (LOD-FDTD with second-order temporal accuracy (denoted as FLOD2-FDTD. The proposed method can highly improve the performance of the FLOD2-FDTD even when the conductor is embedded into more than half of the cell by the coordinate transformation. The experimental results showed that the proposed method can achieve higher accuracy when the time step size is less than or equal to 5 times of that the Courant-Friedrich-Levy (CFL condition allowed. In comparison with the previously reported methods, the proposed method for calculating electromagnetic field near microstrip line edge not only improves the efficiency, but also can provide a higher accuracy.

Full-Wave Analysis of Microstrip Antennas in Three-Layered Spherical Media

Directory of Open Access Journals (Sweden)

Tao Yu

2013-01-01

Full Text Available A model of three-layered spherical microstrip antenna has been analyzed based on Rao-Wilton-Glisson (RWG triangular basis functions using mixed potential integral equation (MPIE. Firstly, the model of antenna and the dyadic Green’s function in spherical microstrip antennas are given at the beginning of this paper. Then, due to the infinite series convergence problem, asymptotic extraction approach is presented to accelerate the Green’s functions convergence speed when source and field points are located in the same layer and different layers. The convergence speed can be accelerated observably by using this method. Finally, in order to simplify impedance matrix elements calculation at the junction of the probe and patch, a novel division fashion of pair of triangles is adopted in this paper. The input impedance result obtained shows the validity and effectiveness of the analysis method comparing with published data.

Signal of microstrip scanning near-field optical microscope in far- and near-field zones.

Science.gov (United States)

Morozov, Yevhenii M; Lapchuk, Anatoliy S

2016-05-01

An analytical model of interference between an electromagnetic field of fundamental quasi-TM(EH)00-mode and an electromagnetic field of background radiation at the apex of a near-field probe based on an optical plasmon microstrip line (microstrip probe) has been proposed. The condition of the occurrence of electromagnetic energy reverse flux at the apex of the microstrip probe was obtained. It has been shown that the nature of the interference depends on the length of the probe. Numerical simulation of the sample scanning process was conducted in illumination-reflection and illumination-collection modes. Results of numerical simulation have shown that interference affects the scanning signal in both modes. However, in illumination-collection mode (pure near-field mode), the signal shape and its polarity are practically insensible to probe length change; only signal amplitude (contrast) is slightly changed. However, changing the probe length strongly affects the signal amplitude and shape in the illumination-reflection mode (the signal formed in the far-field zone). Thus, we can conclude that even small background radiation can significantly influence the signal in the far-field zone and has practically no influence on a pure near-field signal.

The application of a microstrip gas counter to energy-dispersive x-ray fluorescence analysis

International Nuclear Information System (INIS)

Veloso, J.F.C.A.; Santos, J.M.F. dos; Conde, C.A.N.

1996-01-01

Performance characteristics of a microstrip gas counter operated as a x-ray fluorescence spectrometer are reported. Gas amplification as a function of microstrip anode-cathode voltage was measured, and the breakdown threshold voltage was determined in pure xenon. The detector temporal stability and the effect of gas purity were assessed. Energy resolution and linearity, detection efficiency, and uniformity of spatial response in the 2- to 60-keV x-ray energy range were determined from the pulse-height distributions of the fluorescence x-ray spectra induced in a variety of single- and multi-element sample materials. Energy resolution similar to conventional proportional counters was achieved at 6 keV

Open-Circuit End Effect of Microstrip Line Configuration in Plasma Medium

Directory of Open Access Journals (Sweden)

Prem Bhushan Mital

1996-01-01

Full Text Available The extension in length for open microstrip configuration in plasma media is determined using spectral domain technique under quasi static approach [1, 2]. The results were verified by modifying Hammerstad equation for plasma media. Good agreement is found between the two results.

Development and operation of tracking detectors in silicon technology for the LHCb upgrade

CERN Document Server

Rodriguez Perez, Pablo; Adeva, Bernardo

The LHCb experiment is one of the four main experiments at the Large Hadron Collider (LHC) at CERN. It uses the energy density provided by the LHC to attempt to probe asymmetries between particles and antiparticles that can not be explained by the Standard Model, and thus provide evidence that would allow us to build a new model of fundamental physics. This thesis covers the author's work in the Silicon Tracker $(\\textit{ST})$ and VErtex LOcator $(\\textit{VELO})$ detectors of the LHCb experiment. The thesis explains the installation and commissioning of the $ST$, as well as the development of the slow control for the detector. The $ST$ is a silicon micro-strip detector which provides precise momentum measurements of ionizing particles coming from the collisions. The $ST$consists of two sub-detectors: the Tracker Turicensis $ (TT)$, located upstream of the 4 Tm dipole magnet covering the full acceptance of the experiment, and the Inner Tracker $(IT)$, which covers the region of highest particle density closest...

Operational Experience, Improvements, and Performance of the CDF Run II Silicon Vertex Detector

CERN Document Server

Aaltonen, T; Boveia, A.; Brau, B.; Bolla, G; Bortoletto, D; Calancha, C; Carron, S.; Cihangir, S.; Corbo, M.; Clark, D.; Di Ruzza, B.; Eusebi, R.; Fernandez, J.P.; Freeman, J.C.; Garcia, J.E.; Garcia-Sciveres, M.; Gonzalez, O.; Grinstein, S.; Hartz, M.; Herndon, M.; Hill, C.; Hocker, A.; Husemann, U.; Incandela, J.; Issever, C.; Jindariani, S.; Junk, T.R.; Knoepfel, K.; Lewis, J.D.; Martinez-Ballarin, R.; Mathis, M.; Mattson, M.; Merkel, P; Mondragon, M.N.; Moore, R.; Mumford, J.R.; Nahn, S.; Nielsen, J.; Nelson, T.K.; Pavlicek, V.; Pursley, J.; Redondo, I.; Roser, R.; Schultz, K.; Spalding, J.; Stancari, M.; Stanitzki, M.; Stuart, D.; Sukhanov, A.; Tesarek, R.; Treptow, K.; Wallny, R.; Worm, S.

2013-01-01

The Collider Detector at Fermilab (CDF) pursues a broad physics program at Fermilab's Tevatron collider. Between Run II commissioning in early 2001 and the end of operations in September 2011, the Tevatron delivered 12 fb-1 of integrated luminosity of p-pbar collisions at sqrt(s)=1.96 TeV. Many physics analyses undertaken by CDF require heavy flavor tagging with large charged particle tracking acceptance. To realize these goals, in 2001 CDF installed eight layers of silicon microstrip detectors around its interaction region. These detectors were designed for 2--5 years of operation, radiation doses up to 2 Mrad (0.02 Gy), and were expected to be replaced in 2004. The sensors were not replaced, and the Tevatron run was extended for several years beyond its design, exposing the sensors and electronics to much higher radiation doses than anticipated. In this paper we describe the operational challenges encountered over the past 10 years of running the CDF silicon detectors, the preventive measures undertaken, an...

Millimeter-Wave Microstrip Antenna Array Design and an Adaptive Algorithm for Future 5G Wireless Communication Systems

Directory of Open Access Journals (Sweden)

Cheng-Nan Hu

2016-01-01

Full Text Available This paper presents a high gain millimeter-wave (mmW low-temperature cofired ceramic (LTCC microstrip antenna array with a compact, simple, and low-profile structure. Incorporating minimum mean square error (MMSE adaptive algorithms with the proposed 64-element microstrip antenna array, the numerical investigation reveals substantial improvements in interference reduction. A prototype is presented with a simple design for mass production. As an experiment, HFSS was used to simulate an antenna with a width of 1 mm and a length of 1.23 mm, resonating at 38 GHz. Two identical mmW LTCC microstrip antenna arrays were built for measurement, and the center element was excited. The results demonstrated a return loss better than 15 dB and a peak gain higher than 6.5 dBi at frequencies of interest, which verified the feasibility of the design concept.

Quality Factor Effect on the Wireless Range of Microstrip Patch Antenna Strain Sensors

Directory of Open Access Journals (Sweden)

Ali Daliri

2014-01-01

Full Text Available Recently introduced passive wireless strain sensors based on microstrip patch antennas have shown great potential for reliable health and usage monitoring in aerospace and civil industries. However, the wireless interrogation range of these sensors is limited to few centimeters, which restricts their practical application. This paper presents an investigation on the effect of circular microstrip patch antenna (CMPA design on the quality factor and the maximum practical wireless reading range of the sensor. The results reveal that by using appropriate substrate materials the interrogation distance of the CMPA sensor can be increased four-fold, from the previously reported 5 to 20 cm, thus improving considerably the viability of this type of wireless sensors for strain measurement and damage detection.

Quality Factor Effect on the Wireless Range of Microstrip Patch Antenna Strain Sensors

Science.gov (United States)

Daliri, Ali; Galehdar, Amir; Rowe, Wayne S. T.; John, Sabu; Wang, Chun H.; Ghorbani, Kamran

2014-01-01

Recently introduced passive wireless strain sensors based on microstrip patch antennas have shown great potential for reliable health and usage monitoring in aerospace and civil industries. However, the wireless interrogation range of these sensors is limited to few centimeters, which restricts their practical application. This paper presents an investigation on the effect of circular microstrip patch antenna (CMPA) design on the quality factor and the maximum practical wireless reading range of the sensor. The results reveal that by using appropriate substrate materials the interrogation distance of the CMPA sensor can be increased four-fold, from the previously reported 5 to 20 cm, thus improving considerably the viability of this type of wireless sensors for strain measurement and damage detection. PMID:24451457

Analysis and design of broadband U-slot cut rectangular microstrip ...

Indian Academy of Sciences (India)

AMIT A DESHMUKH

2017-07-15

Jul 15, 2017 ... Abstract. Broadband microstrip antenna using variations of U-slot has been widely reported. However, in most of the reported work, an in-depth explanation about the mode introduced by U-slot and procedure to design. U-slot cut antennas at any given frequency is not explained. In this paper, first an ...

A Multiband Proximity-Coupled-Fed Flexible Microstrip Antenna for Wireless Systems

Directory of Open Access Journals (Sweden)

Giovanni Andrea Casula

2016-01-01

Full Text Available A multiband printed microstrip antenna for wireless communications is presented. The antenna is fed by a proximity-coupled microstrip line, and it is printed on a flexible substrate. The antenna has been designed using a general-purpose 3D computer-aided design software (CAD, CST Microwave Studio, and then realized. The comparison between simulated and measured results shows that the proposed antenna can be used for wireless communications for WLAN systems, covering both the WLAN S-band (2.45 GHz and C-band (5.2 GHz, and the Wi-Max 3.5 GHz band, with satisfactory input matching and broadside radiation pattern. Moreover, it has a compact size, is very easy to realize, and presents a discrete out-of-band rejection, without requiring the use of stop-band filters. The proposed structure can be used also as a conformal antenna, and its frequency response and radiated field are satisfactory for curvatures up to 65°.

Effects of hardness of abrasive grains on surface roughness of work piece in PVA bonded grinding wheel

International Nuclear Information System (INIS)

Nitta, S.; Takata, A.; Ishizaki, K.

2000-01-01

The purpose of this study is to clarify relation between hardness of abrasive grains and surface roughness of work piece in the case of PVA (Polyvinyl alcohol) bonded grinding wheels. Two PVA bonded grinding wheels; with diamond or silicon carbide as abrasive grains and grinding of glass and aluminum alloy was performed. The PVA bonded grinding wheels The PVA bonded grinding wheel with silicon carbide could not grind the glass. Because insufficiency in hardness, the PVA bonded grinding wheel with the diamond abrasive grains caused deep scratch on the aluminum alloy. It was found that the final surface roughness of the work piece was not proportional to the hardness of abrasive grains. The suitable hardness of abrasive grains will be obtained by the hardness of work piece. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

Determination of adhesion between thermoplastic and liquid silicone rubbers in hard-soft-combinations via mechanical peeling test

Science.gov (United States)

Kühr, C.; Spörrer, A.; Altstädt, V.

2014-05-01

The production of hard-soft-combinations via multi injection molding gained more and more importance in the last years. This is attributed to different factors. One principle reason is that the use of two-component injection molding technique has many advantages such as cancelling subsequent and complex steps and shortening the process chain. Furthermore this technique allows the combination of the properties of the single components like the high stiffness of the hard component and the elastic properties of the soft component. Because of the incompatibility of some polymers the adhesion on the interface has to be determined. Thereby adhesion is not only influenced by the applied polymers, but also by the injection molding parameters and the characteristics of the mold. Besides already known combinations of thermoplastics with thermoplastic elastomers (TPE), there consists the possibility to apply liquid silicone rubber (LSR) as soft component. A thermoplastic/LSR combination gains in importance due to the specific advantages of LSR to TPE. The faintly adhesion between LSR and thermoplastics is currently one of the key challenges when dealing with those combinations. So it is coercively necessary to improve adhesion between the two components by adding an adhesion promoter. To determine the promoters influence, it is necessary to develop a suitable testing method to investigate e.g. the peel resistance. The current German standard "VDI Richtlinie 2019', which is actually only employed for thermoplastic/TPE combinations, can serve as a model to determine the adhesion of thermoplastic/LSR combinations.

The development of p-type silicon detectors for the high radiation regions of the LHC

CERN Document Server

Hanlon, M D L

1998-01-01

This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Science.gov (United States)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

International Nuclear Information System (INIS)

Qureshi, S.

1991-01-01

Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

CERN Document Server

Steinbrueck, Georg

2012-01-01

Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

Observation of electron multiplication in liquid xenon with a microstrip plate

International Nuclear Information System (INIS)

Policarpo, A.P.L.; Geltenbort, P.; Ferreira Marques, R.; Araujo, H.; Fraga, F.; Alves, M.A.; Fonte, P.; Lima, E.P.; Fraga, M.M.; Salete Leite, M.; Silander, K.; Onofre, A.; Pinhao, J.M.

1995-01-01

We report here on the observation of electron multiplication in liquid xenon in a microstrip chamber with an amplification factor of the order of 10. The measurements were carried out at a temperature between 208 and 215 K (liquid density of about 2.7 g/cm 3 ). (orig.)

Design of a radiation hard silicon pixel sensor for X-ray science

Energy Technology Data Exchange (ETDEWEB)

Schwandt, Joern

2014-06-15

At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

The detector response simulation for the CBM silicon tracking system as a tool for hit error estimation

Energy Technology Data Exchange (ETDEWEB)

Malygina, Hanna [Goethe Universitaet Frankfurt (Germany); KINR, Kyiv (Ukraine); GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Friese, Volker; Zyzak, Maksym [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The Compressed Baryonic Matter experiment(CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. As the central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. To achieve realistic modelling, the response of the silicon strip sensors should be precisely included in the digitizer which simulates a complete chain of physical processes caused by charged particles traversing the detector, from charge creation in silicon to a digital output signal. The current implementation of the STS digitizer comprises non-uniform energy loss distributions (according to the Urban theory), thermal diffusion and charge redistribution over the read-out channels due to interstrip capacitances. Using the digitizer, one can test an influence of each physical processes on hit error separately. We have developed a new cluster position finding algorithm and a hit error estimation method for it. Estimated errors were verified by the width of pull distribution (expected to be about unity) and its shape.

Finite element simulations of low-mass readout cables for the CBM Silicon Tracking System using RAPHAEL

Energy Technology Data Exchange (ETDEWEB)

Singla, M., E-mail: M.Singla@gsi.de [Goethe University, Frankfurt (Germany); GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany); Chatterji, S.; Müller, W.F.J.; Kleipa, V.; Heuser, J.M. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany)

2014-01-21

The first three-dimensional simulation study of thin multi-line readout cables using finite element simulation tool RAPHAEL is being reported. The application is the Silicon Tracking System (STS) of the fixed-target heavy-ion experiment Compressed Baryonic Matter (CBM), under design at the forthcoming accelerator center FAIR in Germany. RAPHAEL has been used to design low-mass analog readout cables with minimum possible Equivalent Noise Charge (ENC). Various trace geometries and trace materials have been explored in detail for this optimization study. These cables will bridge the distance between the microstrip detectors and the signal processing electronics placed at the periphery of the silicon tracking stations. SPICE modeling has been implemented in Sentaurus Device to study the transmission loss (dB loss) in cables and simulation has been validated with measurements. An optimized design having minimum possible ENC, material budget and transmission loss for the readout cables has been proposed.

Nano-hardness estimation by means of Ar+ ion etching

International Nuclear Information System (INIS)

Bartali, R.; Micheli, V.; Gottardi, G.; Vaccari, A.; Safeen, M.K.; Laidani, N.

2015-01-01

When the coatings are in nano-scale, the mechanical properties cannot be easily estimated by means of the conventional methods due to: tip shape, instrument resolution, roughness, and substrate effect. In this paper, we proposed a semi-empirical method to evaluate the mechanical properties of thin films based on the sputtering rate induced by bombardment of Ar + ion. The Ar + ion bombardment was induced by ion gun implemented in Auger electron spectroscopy (AES). This procedure has been applied on a series of coatings with different structure (carbon films) and a series of coating with a different density (ZnO thin films). The coatings were deposited on Silicon substrates by RF sputtering plasma. The results show that, as predicted by Insepov et al., there is a correlation between hardness and sputtering rate. Using reference materials and a simple power law equation the estimation of the nano-hardness using an Ar + beam is possible. - Highlights: • ZnO film and Carbon films were grown on silicon using PVD. • The growth temperature was room temperature. • The hardness of the coatings was estimated by means of nanoindentation. • Evaluation of resistance of materials to the mechanical damage induced by an Ar + ion gun (AES). • The hardness have been studied and a power law with the erosion rate has been found

Microbial biofilms on silicone facial prostheses

NARCIS (Netherlands)

Ariani, Nina

2015-01-01

Facial disfigurements can result from oncologic surgery, trauma and congenital deformities. These disfigurements can be rehabilitated with facial prostheses. Facial prostheses are usually made of silicones. A problem of facial prostheses is that microorganisms can colonize their surface. It is hard

In-flight operations and status of the AMS-02 silicon tracker

CERN Document Server

Ambrosi, G; Battiston, R; Bertucci, b B; Choumilov, E; Choutko, V; Crispoltoni, M; Delgado, C; Duranti, M; Donnini, F; D'Urso, D; Fiandrini, cE; Formato, V; Graziani, M; Habiby, M; Haino, S; Ionica, M; Kanishchev, K; Nozzoli, F; Oliva, c A; Paniccia, M; Pizzolotto, C; Pohl, c M; Qin, X; Rapin, d D; Saouter, P; Tomassetti, N; Vitale, V; Vitillo, c S; Wu, X; Zhang, Z; Zuccon, P

2016-01-01

The AMS-02 detector is a large acceptance magnetic spectrometer operating on the International Space Station since May 2011. More than 60 billion events have been collected by the instrument as of today. One of the key subdetectors of AMS-02 is the microstrip silicon Tracker, designed to precisely measure the trajectory and absolute charge of cosmic rays in the GeV-TeV energy range. In addition, with the magnetic field, is also measuring the particle magnetic rigidity, defined as R = pc/Ze, and the sign of the charge. This report presents the Tracker on-line operations and calibration during the first four years of data taking in space. The track reconstruction efficiency and the resolution will be also reviewed.

Microstructure and wear behaviour of silicon doped Cr-N nanocomposite coatings

Energy Technology Data Exchange (ETDEWEB)

Bao Mingdong, E-mail: bmingd@yahoo.com.c [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); Yu Lei; Xu Xuebo [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); He Jiawen [State Key Lab. for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, 710049 (China); Sun Hailin [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom); Zhejiang Huijin-Teer Coatings Technolgy Co., Ltd., Lin' an 311305 (China); Teer, D.G. [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom)

2009-07-01

Hard Cr-N and silicon doped Cr-Si-N nanocomposite coatings were deposited using closed unbalanced magnetron sputtering ion plating system. Coatings doped with various Si contents were synthesized by changing the power applied on Si targets. Composition of the films was analyzed using glow discharge optical emission spectrometry (GDOES). Microstructure and properties of the coatings were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), and nano-indentation. The harnesses and the elastic modulus of Cr-Si-N coatings gradually increased with rising of silicon content and exhibited a maximum at silicon content of 4.1 at.% and 5.5 at.%. The maximum hardness and elastic modulus of the Cr-Si-N nanocomposite coatings were approximately 30 GPa and 352 GPa, respectively. Further increase in the silicon content resulted in a decrease in the hardness and the elastic modulus of the coatings. Results from XRD analyses of CrN coatings indicated that strongly preferred orientations of (111) were detected. The diffraction patterns of Cr-Si-N coatings showed a clear (220) with weak (200) and (311) preferred orientations, but the peak of CrN (111) was decreased with the increase of Si concentration. The XRD data of single-phase Si{sub 3}N{sub 4} was free of peak. The peaks of CrN (111) and (220) were shifted slightly and broadened with the increase of silicon content. SEM observations of the sections of Cr-Si-N coatings with different silicon concentrations showed a typical columnar structure. It was evident from TEM observation that nanocomposite Cr-Si-N coatings exhibited nano-scale grain size. Friction coefficient and specific wear rate (SWR) of silicon doped Cr-N coatings from pin-on-disk test were significantly lower in comparison to that of CrN coatings.

Gas microstrip detectors on resistive plastic substrates

International Nuclear Information System (INIS)

Dixit, M.S.; Oakham, F.G.; Armitage, J.C.

1993-01-01

Plastics are desirable as substrates for gas microstrip detectors (GMDs) because of their flexibility, low density and long radiation length. GMDs have been fabricated on white Tedlar which has bulk electrical conductivity and ion-implanted Upilex which has a thin electrically conductive layer on the surface of an insulator. The effect of back plane voltage on the gain of such GMDs is investigated. Three 200 μm pitch, ion-implanted Upilex GMDs were recently tested in a high intensity beam at CERN. The anode signals were read out using fast, low noise, high gain amplifiers. Preliminary results of the test are presented

Silicon Detectors for the sLHC - an Overview of Recent RD50 Results

CERN Document Server

Pellegrini, Giulio

2009-01-01

It is foreseen to significantly increase the luminosity of the Large Hadron Collider(LHC) at CERN around 2018 by upgrading the LHC towards the sLHC (Super-LHC). Due to the radiation damage to the silicon detectors used, the physics experiment will require new tracking detectors for sLHC operation. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors on the innermost layers. The radiation hardness of these new sensors must surpass the one of LHC detectors by roughly an order of magnitude. Within the CERN RD50 collaboration, a massive R&D programme is underway to develop silicon sensors with sufficient radiation tolerance. Among the R&D topics are the development of new sensor types like 3D silicon detectors designed for the extreme radiation levels of the sLHC. We will report on the recent results obtained by RD50 from tests of several detector technologies and silicon materials at radiation levels corresponding to SLHC fluences. Based on ...

Note: Electrical detection and quantification of spin rectification effect enabled by shorted microstrip transmission line technique

International Nuclear Information System (INIS)

Soh, Wee Tee; Ong, C. K.; Peng, Bin; Chai, Guozhi

2014-01-01

We describe a shorted microstrip method for the sensitive quantification of Spin Rectification Effect (SRE). SRE for a Permalloy (Ni 80 Fe 20 ) thin film strip sputtered onto SiO 2 substrate is demonstrated. Our method obviates the need for simultaneous lithographic patterning of the sample and transmission line, therefore greatly simplifying the SRE measurement process. Such a shorted microstrip method can allow different contributions to SRE (anisotropic magnetoresistance, Hall effect, and anomalous Hall effect) to be simultaneously determined. Furthermore, SRE signals from unpatterned 50 nm thick Permalloy films of area dimensions 5 mm × 10 mm can even be detected

Silicon sensors for trackers at high-luminosity environment

Energy Technology Data Exchange (ETDEWEB)

Peltola, Timo, E-mail: timo.peltola@helsinki.fi

2015-10-01

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

A microstrip gas avalanche chamber with two-dimensional readout

International Nuclear Information System (INIS)

Angelini, F.; Bellazzini, R.; Brez, A.; Massai, M.M.; Spandre, G.; Torquati, M.R.

1989-01-01

A microstrip gas avalanche chamber with a 200 μm anode pitch has been built and successfully tested in our laboratory. A gas gain of 10 4 and an energy resolution of 18% (FWHM) at 6 keV have been measured using a gas mixture of argon-CO 2 at atmospheric pressure. A preliminary measurement of the positional sensitivity indicates that a spatial resolution of 50 μm can be obtained. (orig.)

Mechanical integration of the detector components for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Vasylyev, Oleg; Niebur, Wolfgang [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The Compressed Baryonic Matter experiment (CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. In order to achieve the physics performance, the detector mechanical structures should be developed taking into account the requirements of the CBM experiments: low material budget, high radiation environment, interaction rates, aperture for the silicon tracking, detector segmentation and mounting precision. A functional plan of the STS and its surrounding structural components is being worked out from which the STS system shape is derived and the power and cooling needs, the connector space requirements, life span of components and installation/repair aspects are determined. The mechanical integration is at the point of finalizing the design stage and moving towards production readiness. This contribution shows the current processing state of the following engineering tasks: construction space definition, carbon ladder shape and manufacturability, beam-pipe feedthrough structure, prototype construction, cable routing and modeling of the electronic components.

Radiation-hard silicon gate bulk CMOS cell family

International Nuclear Information System (INIS)

Gibbon, C.F.; Habing, D.H.; Flores, R.S.

1980-01-01

A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved

Developing very hard nanostructured bainitic steel

Energy Technology Data Exchange (ETDEWEB)

Amel-Farzad, H., E-mail: hh_amel@yahoo.com [Department of Materials Engineering and Metallurgy, Faculty of Engineering, Bu-Ali Sina University, Hamedan (Iran, Islamic Republic of); Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Faridi, H.R., E-mail: faridihr@yahoo.com [Department of Materials Engineering and Metallurgy, Hamedan University of Technology, Hamedan (Iran, Islamic Republic of); Rajabpour, F.; Abolhasani, A.; Kazemi, Sh.; Khaledzadeh, Y. [Department of Materials Engineering and Metallurgy, Faculty of Engineering, Bu-Ali Sina University, Hamedan (Iran, Islamic Republic of)

2013-01-01

Novel nanostructured high carbon high silicon, carbide-free bainitic steels with very high strength and good ductility have been developed in the recent decade. In this work, an alloy with a high carbon content and no manganese was designed and cast. The prepared samples were heat treated through an austempering process in the range 200-350 Degree-Sign C. Optical and scanning electron microscopes and XRD were used to analyze the microstructures precisely. Bainitic ferrite plates of just a few tens of nanometer thickness were obtained with the hardness of 697{+-}6 HV. It is reasonable to say that the unprecedented hardness values obtained in this work are mostly caused by the extraordinary carbon content of the alloy.

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Development of radiation hard readout electronics for LHCb

CERN Document Server

Sexauer, Edgar; Lindenstruth, Volker

2001-01-01

The experiment LHCb is under development at CERN and aims to measure CP-violation in the B-Meson system at very high precision. The experiment makes use of a vertex detector that is equipped with silicon microstrip detectors. A chip suitable for the readout of this detector has been developed in a working group at the ASIC-laboratory Heidelberg. This readout chip 'Beetle-1.0' contains 128 analog input stages of a charge sensitive preamplifier, a pulse shaper and a buffer. The analog signal is fed into a comparator, from which a fast trigger signal can be derived. The following pipeline, realized as an array of gate capacitances, can be used to either store the analog output of the input amplifiers or to store the digital comparator output. External trigger signals mark events that have to be read out and the according pipeline location is stored in a derandomizing buffer. Pending events are read out from the pipeline via a charge-sensitive, resetable amplifier and an analog multiplexer, which serializes the s...

Performance of Radiation Hard Pixel Sensors for the CMS Experiment

CERN Document Server

Dorokhov, Andrei

2005-01-01

Position sensitive detectors in particle physics experiments are used for the detection of the particles trajectory produced in high energy collisions. To study physics phenomena at high energies the high particle interaction rate is unavoidable, as the number of interesting events falls with the energy and the total number of events is dominated by the soft processes. The position resolution of vertex detectors has to be of few microns in order to distinguish between particle tracks produced in b-quark or tau-decays, because of the short flight path before the decay. The high spatial position resolution and the ability to detect a large number of superimposed track are the key features for tracking detectors. Modern silicon microstrip and pixel detectors with high resolution are currently most suitable devices for the tracking systems of high energy physics experiments. In this work the performance of the sensors designed for the CMS pixel detector are studied and the position resolution is estimated. In the...

Microstrip linear phase low pass filter based on defected ground structures for partial response modulation

DEFF Research Database (Denmark)

Cimoli, Bruno; Johansen, Tom Keinicke; Olmos, Juan Jose Vegas

2018-01-01

We report a high performance linear phase low pass filter (LPF) designed for partial response (PR) modulations. For the implementation, we adopted microstrip technology and a variant of the standard stepped‐impedance technique. Defected ground structures (DGS) are used for increasing the characte......We report a high performance linear phase low pass filter (LPF) designed for partial response (PR) modulations. For the implementation, we adopted microstrip technology and a variant of the standard stepped‐impedance technique. Defected ground structures (DGS) are used for increasing...... the characteristic impedance of transmission lines. Experimental results prove that the proposed filter can successfully modulate a non‐return‐to‐zero (NRZ) signal into a five levels PR one....

An investigation into the use of large area silicon semiconductors in microwave systems

International Nuclear Information System (INIS)

Holliday, H.R.

1999-09-01

Semiconductor microwave devices are usually manufactured using micron or sub-micron geometries. The equipment needed for these techniques has a high capital cost and demands high overheads. The material traditionally processed for microwave applications is gallium arsenide but during the period of this investigation a move towards the use of silicon and silicon germanium has emerged. This study, which is essentially practical, covers a range of new ideas for components using large area silicon devices. In the course of the study considerable progress has also been made in the understanding of the behaviour of silicon at microwave frequencies, and some of the initial Concepts were shown to be invalid. An accurate determination of the dielectric constant of silicon has been made using quasi optical techniques at microwave frequencies. The fabrication techniques described originate from methods used at Q-par Angus to manufacture large area silicon nuclear radiation detectors. Developed at the University of Birmingham, these are 'wet chemistry' methods that preclude the need for diffusion or other conventional semiconductor processing techniques. Novel microwave components have been developed using these techniques. These include an optically controlled attenuator with multioctave bandwidth and good dynamic range; window devices to reduce the radar cross section of microwave antennas; and microwave cavity devices including a variable-Q cavity. Concepts for millimeter wave filters are discussed, as are areas for further research. During the attenuator study Wheeler's equations have been extended to cover truncated microstrip. It was observed at an early stage in the work that optical excitation was very effective as a method of controlling the devices. This fits well with current trends in electro-optical devices. The piezo resistance effect in silicon has been briefly investigated and a mechanical attenuator exploiting this effect has been developed. (author)

Factors influencing the performances of micro-strips gas chambers

International Nuclear Information System (INIS)

Mack, V.; Brom, J.M.; Fang, R.; Fontaine, J.C.; Huss, D.; Kachelhoffer, T.; Kettunen, H.; Levy, J.M.; Pallares, A.; Bergdolt, A.M.; Cailleret, J.; Christophel, E.; Coffin, J.; Eberle, H.; Osswald, F.; Sigward, M.H.

1995-01-01

Damages to MSGCs (Micro-Strips Gas Chambers) induced by discharges have been investigated. Optimization of electrode shapes and/or deposition of a protective coating allows the potential difference between anode and cathode, thus increasing the gain. For prototypes of MSGCs made at the Centre de Recherches Nucleaires, each step of the manufacturing processes was carefully controlled. Results are presented on the influence of cleaning processes on the surface resistance of glass substrates. (author). 21 refs., 8 figs., 2 tabs

Radiation hardness of silicon detectors - a challenge from high-energy physics

CERN Document Server

Lindström, G; Fretwurst, E

1999-01-01

An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

Modelling of bow-tie microstrip antennas using modified locally conformal FDTD method

NARCIS (Netherlands)

George, J.

2000-01-01

An analysis of bow-tie microstrip antennas is presented based on the use of the modified locally conformal finite-difference time-domain (FDTD) method. This approach enables the number of cells along the antenna length and width to be chosen independently of the antenna central width, which helps to

Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

CERN Document Server

Adriani, O

1997-01-01

We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

Nano-hardness estimation by means of Ar{sup +} ion etching

Energy Technology Data Exchange (ETDEWEB)

Bartali, R., E-mail: bartali@fbk.eu; Micheli, V.; Gottardi, G.; Vaccari, A.; Safeen, M.K.; Laidani, N.

2015-08-31

When the coatings are in nano-scale, the mechanical properties cannot be easily estimated by means of the conventional methods due to: tip shape, instrument resolution, roughness, and substrate effect. In this paper, we proposed a semi-empirical method to evaluate the mechanical properties of thin films based on the sputtering rate induced by bombardment of Ar{sup +} ion. The Ar{sup +} ion bombardment was induced by ion gun implemented in Auger electron spectroscopy (AES). This procedure has been applied on a series of coatings with different structure (carbon films) and a series of coating with a different density (ZnO thin films). The coatings were deposited on Silicon substrates by RF sputtering plasma. The results show that, as predicted by Insepov et al., there is a correlation between hardness and sputtering rate. Using reference materials and a simple power law equation the estimation of the nano-hardness using an Ar{sup +} beam is possible. - Highlights: • ZnO film and Carbon films were grown on silicon using PVD. • The growth temperature was room temperature. • The hardness of the coatings was estimated by means of nanoindentation. • Evaluation of resistance of materials to the mechanical damage induced by an Ar{sup +} ion gun (AES). • The hardness have been studied and a power law with the erosion rate has been found.

Microstrip Antenna Design for Femtocell Coverage Optimization

Directory of Open Access Journals (Sweden)

Afaz Uddin Ahmed

2014-01-01

Full Text Available A mircostrip antenna is designed for multielement antenna coverage optimization in femtocell network. Interference is the foremost concern for the cellular operator in vast commercial deployments of femtocell. Many techniques in physical, data link and network-layer are analysed and developed to settle down the interference issues. A multielement technique with self-configuration features is analyzed here for coverage optimization of femtocell. It also focuses on the execution of microstrip antenna for multielement configuration. The antenna is designed for LTE Band 7 by using standard FR4 dielectric substrate. The performance of the proposed antenna in the femtocell application is discussed along with results.

Performance of microstrip gas chambers passivated by thin semiconducting glass and plastic films

International Nuclear Information System (INIS)

Bishai, M.R.; Gerndt, E.K.E.; Shipsey, I.P.J.; Wang, P.N.; Bagulya, A.V.; Grishin, V.M.; Negodaev, M.A.; Geltenbort, P.

1995-01-01

Patterned microstrip gas chamber substrates have been covered with ion-beam sputtered glass with electronic conductivity or a polymer which was subsequently irradiated with an ion-beam. The sputtering procedure is described in detail. The performance of several detectors is reported. (orig.)

Standard hardness conversion tables for metals relationship among brinell hardness, vickers hardness, rockwell hardness, superficial hardness, knoop hardness, and scleroscope hardness

CERN Document Server

American Society for Testing and Materials. Philadelphia

2007-01-01

1.1 Conversion Table 1 presents data in the Rockwell C hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.2 Conversion Table 2 presents data in the Rockwell B hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.3 Conversion Table 3 presents data on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, and Knoop hardness of nickel and high-nickel alloys (nickel content o...

Energy resolution in X-ray detecting micro-strip gas counters

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Mir, J A; Spill, E J; Stephenson, R

2002-01-01

Systematic measurements of the energy resolution available from a Micro-Strip Gas Counter (MSGC) are presented. The effect of factors such as bias potential, gas filling and strip geometry on the energy resolution are examined in detail and related to a simple model. The geometry of the MSGC is adapted to permit 'wall-less' detection of X-rays and this results in useful improvements in the pulse height spectra.

The Effect of Pile-Up and Contact Area on Hardness Test by Nanoindentation

Science.gov (United States)

Miyake, Koji; Fujisawa, Satoru; Korenaga, Atsushi; Ishida, Takao; Sasaki, Shinya

2004-07-01

We used atomic force microscopy (AFM) for the indentation test evaluating the indentation hardness of materials in the nanometer range. BK7, fused silica, and single-crystal silicon were used as test sample materials. The data analysis processes used to determine the contact area were important in evaluating the indentation hardness of the materials. The direct measurement of the size of the residual hardness impression was useful in evaluating the contact area even in the nanometer region. The results led us to conclude that AFM indentation using a sharp indenter is a powerful method for estimating the indentation hardness in the nanometer range.

Development of dosimeters with rad-hard silicon diodes for high dose dosimetry

International Nuclear Information System (INIS)

Camargo, Fabio de

2009-01-01

In this work we report on results obtained with rad-hard Standard Float Zone (FZ), Diffusion Oxygenated Float Zone (DOFZ) and Magnetic Czochralski (MCz) silicon diodes in gamma radiation processing dosimetry. These p ± n-n + junction devices were manufactured by Okmetic Oyj. (Vantaa, Finland) and processed by the Microelectronics Center of Helsinki University of Technology in the framework of the CERN RD50 Collaboration. The dosimetric probes, based on FZ, DOFZ and M Cz devices, were designed to operate without bias voltage in the direct current mode as on-line radiation dosimeter. The irradiations were performed in the Radiation Technology Center (CTR) at IPEN-CNEN/SP using a 60 Co source (Gamma cell 220 - Nordion) with a dose rate around of 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. The results obtained showed a significant decrease in the photocurrent generated in all devices for total absorbed doses higher than approximately 25 kGy. To reduce this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy in order to saturate the trap production in the diode's sensitive volume. After pre-irradiation, despite of being less sensitive, all devices exhibited more stable photocurrent signals, even for total absorbed doses of 275 kGy. To monitor possible gamma radiation damage effects produced on the diodes, their dynamic leakage current and capacitance were measured as a function of the absorbed dose. (author)

SuperAGILE: The Hard X-ray Imager of AGILE

International Nuclear Information System (INIS)

Feroci, M.; Costa, E.; Barbanera, L.; Del Monte, E.; Di Persio, G.; Frutti, M.; Lapshov, I.; Lazzarotto, F.; Pacciani, L.; Porrovecchio, G.; Preger, B.; Rapisarda, M.; Rubini, A.; Soffitta, P.; Tavani, M.; Mastropietro, M.; Morelli, E.; Argan, A.; Ghirlanda, G.; Mereghetti, S.

2004-01-01

SuperAGILE is the hard X-ray (10-40 keV) imager for the gamma-ray mission AGILE, currently scheduled for launch in mid-2005. It is based on 4 Si-microstrip detectors, with a total geometric area of 1444 cm 2 (max effective about 300 cm 2 ), equipped with one-dimensional coded masks. The 4 detectors are perpendicularly oriented, in order to provide pairs of orthogonal one-dimensional images of the X-ray sky. The field of view of each 1-D detector is 107 deg. x 68 deg., at zero response, with an overlap in the central 68 deg. x 68 deg. area. The angular resolution on axis is 6 arcmin (pixel size). We present here the current status of the hardware development and the scientific potential for GRBs, for which an onboard trigger and imaging system will allow distributing locations through a fast communication telemetry link from AGILE to the ground

Efficiency measurements for 3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich, E-mail: ulrich.parzefall@physik.uni-freiburg.d [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Dalla Betta, Gian-Franco [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Koehler, Michael; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2010-11-01

Silicon strip detectors are widely used as part of the inner tracking layers in particle physics experiments. For applications at the luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, silicon detectors with extreme radiation hardness are required. The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors. Detectors with several innovative 3D designs that constitute a simpler and more cost-effective processing than the 3D design initially proposed were connected to read-out electronics from LHC experiments and subsequently tested. Results on the amount of charge collected, the noise and the uniformity of charge collection are given.

Gas microstrip detectors for X-ray tomographic flow imaging

CERN Document Server

Key, M J; Luggar, R D; Kundu, A

2003-01-01

A investigation into the suitability of gas microstrip detector technology for a high-speed industrial X-ray tomography system is reported. X-ray energies in the region 20-30 keV are well suited to the application, which involves imaging two-dimensional slices through gas/liquid multiphase pipeline flows for quantitative component fraction measurement. Stable operation over a period representing several hundred individual tomographic scans at gas gains of 500 is demonstrated using a Penning gas mixture of krypton/propylene.

Dual-Frequency, Dual-Polarization Microstrip Antenna Development for High-Resolution, Airborne SAR

DEFF Research Database (Denmark)

Granholm, Johan; Skou, N.

2000-01-01

synthetic aperture radar (SAR) system. The dual-frequency array concept adopted relies on the use of probe-fed perforated, stacked patches for L-band (1.2-1.3 GHz). Inside these perforations probe-fed, wideband stacked microstrip patches for C-band (4.9-5.7 GHz) are placed. Measured impedance and radiation...

Effect of chain extender on properties of silicone rubber sealant

Science.gov (United States)

Liu, Jiesheng; Wu, Shaopeng; Mi, Yixuan; Zhu, Guojun; Zheng, Shaoping

2010-03-01

The room-temperature vulcanizing silicone rubber sealant was prepared with chain extender. The effect of chain extender on the properties of silicone rubber sealant was discussed. The composite samples with chain extender were investigated from the aspects of tack-free time, cross-linkage density, hardness (penetration number) and adhesive strength with the concrete slab. It was found that the adding of the chain extender effectively makes the molecular chain length increase and causes the mechanical properties improvement. In addition, the increase in the amount of the chain extender reduces the cross-linkage density and hardness of silicone rubber sealant, which is accompanied with a decrease in the tack-free time. Adhesive strength is one of the most important requirements for sealant. The effect of chain extender on the adhesive strength was also investigated in this study. It was found that the increase in the amount of the chain extender makes the adhesive strength between the sealant and the concrete slab decrease.

Evaluation of diagnostic technique for degradation of low-voltage electric cables with silicone rubber insulator

International Nuclear Information System (INIS)

Mikami, Masao

2005-01-01

As a part of countermeasures against ageing problems of nuclear power plants, it is requested to establish non-destructive diagnostic technique for their degradation of low voltage electric cables and assessment standard of their life. Having aimed at investigating the degradation of low-voltage electric cable with silicone rubber insulator, change of its surface hardness at elevated temperature were measured by indenter modules. Moreover, we also measured the elongation at break, which is regarded as general degradation index of electric cables, and the surface hardness with a micro hardness meter. Consequently, it is seen that the indenter modulus measurement is (1) capable to obtain general feature of the thermal degradation of silicone rubber insulator, (2) applicable to diagnose the degree of degradation of the electric cable by converting the result to elongation at break, (3) well correlated with the hardness measurement of the electric cable with the micro hardness meter. (author)

The GLAST silicon-strip tracking system

International Nuclear Information System (INIS)

Johnson, Robert P.

2000-01-01

The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma-ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4x4 array of tower modules with an aperture of 2.9 m2 and an effective area of greater than 8000 cm2

The GLAST Silicon-Strip Tracking System

International Nuclear Information System (INIS)

Johnson, R

2004-01-01

The GLAST instrument concept is a gamma-ray pair conversion telescope that uses silicon microstrip detector technology to track the electron-positron pairs resulting from gamma ray conversions in thin lead foils. A cesium iodide calorimeter following the tracker is used to measure the gamma-ray energy. Silicon strip technology is mature and robust, with an excellent heritage in space science and particle physics. It has many characteristics important for optimal performance of a pair conversion telescope, including high efficiency in thin detector planes, low noise, and excellent resolution and two-track separation. The large size of GLAST and high channel count in the tracker puts demands on the readout technology to operate at very low power, yet with sufficiently low noise occupancy to allow self triggering. A prototype system employing custom-designed ASIC's has been built and tested that meets the design goal of approximately 200 (micro)W per channel power consumption with a noise occupancy of less than one hit per trigger per 10,000 channels. Detailed design of the full-scale tracker is well advanced, with non-flight prototypes built for all components, and a complete 50,000 channel engineering demonstration tower module is currently under construction and will be tested in particle beams in late 1999. The flight-instrument conceptual design is for a 4 x 4 array of tower modules with an aperture of 2.9 m 2 and an effective area of greater than 8000 cm 2

Requirements for the Silicon Tracking System of CBM at FAIR

International Nuclear Information System (INIS)

Heuser, Johann M.; Deveaux, M.; Muentz, C.; Stroth, J.

2006-01-01

The Compressed Baryonic Matter (CBM) experiment at the future Facility for Antiproton and Ion Research (FAIR) in Darmstadt will systematically study dense baryonic matter created in collisions of intense heavy-ion beams with nuclear targets. The research addresses current questions of strong-interaction physics as confinement in normal nuclear matter, chiral symmetry restoration in deconfined matter at high temperatures and densities, and the search for the critical end-point of the phase boundary. With beams of ions as heavy as Au and U, energies up to 45GeV/nucleon and intensities up to 10 12 ions per pulse, FAIR will enable CBM to probe the phase diagram of quantum chromo dynamics (QCD) in a region poorly known, while being complementary to current and future research programmes at RHIC and LHC. The CBM experiment is planned as a fixed-target spectrometer optimized for the detection of rare probes. Among these are open charm and low-mass vector mesons, important observables for the initial energetic and dense phase of the collisions. The experimental concept and challenge is to accomplish charged particle tracking in the high-multiplicity, high-radiation collision environment. This will be realized exclusively with a silicon tracking detector system installed in a strong magnetic dipole field directly behind the target. Key to the physics of CBM and benchmark for the tracking is the reconstruction of short-lived charmed mesons that puts high demands on the silicon detectors. The article presents a conceptual design of the CBM experiment with emphasis on the silicon tracking system. Requirements for silicon microstrip and pixel detectors and their arrangement in the tracker are discussed in relation to important physics observables addressed by CBM

Effect of chemical disinfectants and accelerated aging on maxillofacial silicone elastomers: An In vitro Study

Directory of Open Access Journals (Sweden)

Anna Serene Babu

2018-01-01

Full Text Available Context: Maxillofacial prostheses need frequent refabrication due to degradation of color and deterioration of physical properties of the elastomer. Aims: This study attempted to evaluate the change in color stability, Shore A hardness, and surface roughness of two maxillofacial silicones, A-2186 and Cosmesil M511, when submitted to chemical disinfection and accelerated aging. Settings and Design: This was a comparative in vitro study. Subjects and Methods: The materials included two silicone elastomers – A-2186 and Cosmesil M511 (Factor II Incorporated – functional intrinsic red pigment and three disinfectants – Fittydent tablet, chlorhexidine gluconate 4%, and neutral soap. The specimens in each group of elastomer were evaluated initially for color, hardness, and surface roughness, which were further divided into subgroups and subjected to disinfection and accelerated aging. The evaluation of color was performed with the help of an ultraviolet reflectance spectrophotometer. Shore A hardness was evaluated using a durometer and surface roughness, with a digital roughness tester followed by scanning electron microscopy analysis. Statistical Analysis Used: Analysis of variance and Tukey's multiple comparison test were used for statistical analysis. Results: Accelerated aging caused a significant decrease in color, increase in Shore A hardness, and variation in surface roughness in both silicone elastomer groups. Chemical disinfection presented significant changes in color and surface roughness whereas no significant effect on Shore hardness, irrespective of the disinfectant used. Conclusions: The maxillofacial silicone elastomers presented deterioration in color, hardening, and significant variations in surface roughness when subjected to chemical disinfection and accelerated aging, which provides a valid baseline for future research.

Simplified microstrip discontinuity modeling using the transmission line matrix method interfaced to microwave CAD

Science.gov (United States)

Thompson, James H.; Apel, Thomas R.

1990-07-01

A technique for modeling microstrip discontinuities is presented which is derived from the transmission line matrix method of solving three-dimensional electromagnetic problems. In this technique the microstrip patch under investigation is divided into an integer number of square and half-square (triangle) subsections. An equivalent lumped-element model is calculated for each subsection. These individual models are then interconnected as dictated by the geometry of the patch. The matrix of lumped elements is then solved using either of two microwave CAD software interfaces with each port properly defined. Closed-form expressions for the lumped-element representation of the individual subsections is presented and experimentally verified through the X-band frequency range. A model demonstrating the use of symmetry and block construction of a circuit element is discussed, along with computer program development and CAD software interface.

The CDF SVX II upgrade for the Tevatron Run II

International Nuclear Information System (INIS)

Bortoletto, Daniela

1997-01-01

A microstrip silicon detector SVX II has been proposed for the upgrade of CDF to be installed in 1999 for Run II of the Tevatron. Three barrels of five layers of double-sided silicon microstrip detectors will cover the interaction region. A description of the project status will be presented. Emphasis will be given to the R and D program for silicon sensors which includes capacitance minimization, the study of coupling capacitor integrity, the operation of the detectors in conjunction with the SVXH and SVX2 readout chips in two beam tests and the determination of the detectors performance deterioration due to radiation damage

High gain gas microstrip detectors for soft x-ray detection

International Nuclear Information System (INIS)

Bateman, J.; Barlow, R.; Derbyshire, G.

2001-01-01

This report describes development work in which systematic changes in the pitch of the electrode pattern of a Gas Microstrip Detector are explored in the search for higher avalanche gains and enhanced stability. With the cathode width set to half of the pitch, gas gains of >50 000 are comfortably attainable with low detector noise so that x-rays can potentially be detected down to the limit of a single x-ray-produced photoelectron. (author)

Microstripes for transport and separation of magnetic particles

DEFF Research Database (Denmark)

Donolato, Marco; Dalslet, Bjarke Thomas; Hansen, Mikkel Fougt

2012-01-01

We present a simple technique for creating an on-chip magnetic particle conveyor based on exchange-biased permalloy microstripes. The particle transportation relies on an array of stripes with a spacing smaller than their width in conjunction with a periodic sequence of four different externally...... applied magnetic fields. We demonstrate the controlled transportation of a large population of particles over several millimeters of distance as well as the spatial separation of two populations of magnetic particles with different magnetophoretic mobilities. The technique can be used for the controlled...... selective manipulation and separation of magnetically labelled species. (C) 2012 American Institute of Physics....

Performance of microstrip proportional counters for x-ray astronomy on spectrum-roentgen-gamma

DEFF Research Database (Denmark)

Budtz-Jørgensen, Carl; BAHNSEN, A; Christensen, Finn Erland

1991-01-01

DSRI will provide a set of four imaging proportional counters for the Danish-Soviet X-ray telescopes XSPECT/SODART. The sensor principle is based on the novel micro-strip proportional counter (MSPC), where the strip electrodes are deposited by photolithography onto a rigid substrate. The MSPC off...

Development of gas micro-strip chambers for high rate radiation detection and tracking

CERN Document Server

Bouclier, Roger; Gaudaen, J; Florent, J J; Ropelewski, Leszek; Sauli, Fabio; Bondar, A E; Groshev, V R; Minakov, G D; Onuchin, A P; Pestov, Yu N; Shekhtman, L I; Sidorov, V A; Dixit, M S; Oakham, G K; Møller, S; Sørensen, G; Uggerhøj, Erik; Brons, S; Brückner, W; Godbersen, M; Heidrich, M; Paul, S; Trombini, A; Werding, R; Armitage, J A; Karlen, D A; Stewart, G; Barasch, E F; McIntyre, P; Pang, Y; Trost, H J; Salomon, M; Breskin, Amos; Chechik, R; Pansky, A; CERN. Geneva. Detector Research and Development Committee

1992-01-01

Gas Micro-Strip Chambers (GMSC) are a promising high-rate, high resolution position detector suited for use in high luminosity hadron collider experiments, as general purpose tracker or to improve the performances of pre-shower counters, transition radiation and inner muon detectors. Large GMSC arrays have been included in proposed LHC and SSC experimental setups. The operating characteristics of GMSC make their use very attractive also for detectors at tau/charm/beauty factories, as well as for synchrotron radiation facilities and for medical applications. At the present state of the art, some problems limiting the usefulness of microstrip chambers are the observed gain changes due to charging up of the support, possible long-term degradation due to ageing, limited sizes imposed by fabrication technologies and unavailability of dedicated high-speed, high-density readout electronics. Limited experience exists of operation of GMSC in real experimental conditions, and little if anything is known about performan...

Silicon Strip Detectors for the ATLAS sLHC Upgrade

CERN Document Server

Miñano, M; The ATLAS collaboration

2011-01-01

While the Large Hadron Collider (LHC) at CERN is continuing to deliver an ever-increasing luminosity to the experiments, plans for an upgraded machine called Super-LHC (sLHC) are progressing. The upgrade is foreseen to increase the LHC design luminosity by a factor ten. The ATLAS experiment will need to build a new tracker for sLHC operation, which needs to be suited to the harsh sLHC conditions in terms of particle rates. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. The left part of figure 1 shows the simulated layout for the ATLAS tracker upgrade to be installed in the volume taken up by the current ATLAS pixel, strip and transition radiation detectors. Silicon sensors with sufficient radiation hardness are the subject of an international R&D programme, working on pixel and strip sensors. The...

Advanced silicon materials for photovoltaic applications

CERN Document Server

Pizzini, Sergio

2012-01-01

Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

The ternary system nickel-boron-silicon

International Nuclear Information System (INIS)

Lugscheider, E.; Reimann, H.; Knotek, O.

1975-01-01

The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

Laboratory and test beam results from a large-area silicon drift detector

CERN Document Server

Bonvicini, V; Giubellino, P; Gregorio, A; Idzik, M; Kolojvari, A A; Montaño-Zetina, L M; Nouais, D; Petta, C; Rashevsky, A; Randazzo, N; Reito, S; Tosello, F; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A very large-area (6.75*8 cm/sup 2/) silicon drift detector with integrated high-voltage divider has been designed, produced and fully characterised in the laboratory by means of ad hoc designed MOS injection electrodes. The detector is of the "butterfly" type, the sensitive area being subdivided into two regions with a maximum drift length of 3.3 cm. The device was also tested in a pion beam (at the CERN PS) tagged by means of a microstrip detector telescope. Bipolar VLSI front-end cells featuring a noise of 250 e/sup -/ RMS at 0 pF with a slope of 40 e/sup -//pF have been used to read out the signals. The detector showed an excellent stability and featured the expected characteristics. Some preliminary results will be presented. (12 refs).

The silicon tracking system of the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Balog, Tomas [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2014-07-01

The Compressed Baryonic Matter (CBM) experiment at FAIR will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. As the core tracking detector of CBM the Silicon Tracking System (STS) will be installed in the gap of the 1 T super conducting dipole magnet for reconstruction of charged particle trajectories and its momenta. The requirement on momentum resolution, Δp/p=1%, can only be achieved with an ultra-low material budget, imposing particular restrictions on the location of 2.5 million channel front-end electronics dissipating 40 KW in the fiducial volume of about 2 m{sup 3}. The concept of the STS is based on a modular structure containing 300 μm thick double-sided silicon microstrip sensors read out through ultra-thin multi-line micro-cables with fast self-triggering electronics. As central building blocks the modules consisting of each a sensor, micro-cable and front-end electronics will be mounted with lightweight carbon fiber support structures onto 8 detector stations. At the station periphery infrastructure such as power and cooling lines will be placed. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

SVX/silicon detector studies

International Nuclear Information System (INIS)

Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

1995-11-01

AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

Modelado de secciones curvas con tecnología microstrip

OpenAIRE

Aires Casas, Fco. Manuel

2008-01-01

El fin de algunos dispositivos electrónicos es ocupar el menor espacio posible, sin que la calidad de su función se devalúe apreciablemente, y para conseguirlo es necesario utilizar técnicas de miniaturización. Así, el objetivo principal del proyecto es analizar el efecto que tienen diferentes tipos de curvas en estructuras microstrip (líneas de transmisión constituidas por una franja conductora y un plano de tierra separados por un medio dieléctrico). El proceso se ha efectuado m...

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

CERN Document Server

American Society for Testing and Materials. Philadelphia

2010-01-01

1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

Prediction of matching condition for a microstrip subsystem using artificial neural network and adaptive neuro-fuzzy inference system

Science.gov (United States)

Salehi, Mohammad Reza; Noori, Leila; Abiri, Ebrahim

2016-11-01

In this paper, a subsystem consisting of a microstrip bandpass filter and a microstrip low noise amplifier (LNA) is designed for WLAN applications. The proposed filter has a small implementation area (49 mm2), small insertion loss (0.08 dB) and wide fractional bandwidth (FBW) (61%). To design the proposed LNA, the compact microstrip cells, an field effect transistor, and only a lumped capacitor are used. It has a low supply voltage and a low return loss (-40 dB) at the operation frequency. The matching condition of the proposed subsystem is predicted using subsystem analysis, artificial neural network (ANN) and adaptive neuro-fuzzy inference system (ANFIS). To design the proposed filter, the transmission matrix of the proposed resonator is obtained and analysed. The performance of the proposed ANN and ANFIS models is tested using the numerical data by four performance measures, namely the correlation coefficient (CC), the mean absolute error (MAE), the average percentage error (APE) and the root mean square error (RMSE). The obtained results show that these models are in good agreement with the numerical data, and a small error between the predicted values and numerical solution is obtained.

Neutron beam test of multi-grid-type microstrip gas chamber

International Nuclear Information System (INIS)

Fujita, K.; Takahashi, H.; Siritiprussamee, P.; Niko, H.; Kai, M.; Nakazawa, M.; Ino, T.; Sato, S.; Yokoo, T.; Furusaka, M.; Kanazawa, M.

2006-01-01

Multi-grid-type microstrip gas chambers (M-MSGCs) are being developed for the next-generation pulsed neutron source. Two new concepts, a global-local-grouping (GLG) method and a graded cathode pattern readout method, were applied to the M-MSGC design for realizing higher counting rate than traditional 3 He proportional counters. One-dimensional detectors with 700 mm-long test plates were fabricated and tested with X-ray and neutron beams, which demonstrated position detection capability based on these concepts

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue ...

Development of Gas Micro-Strip Chambers for Radiation Detection and Tracking at High Rates

CERN Multimedia

2002-01-01

% RD28 \\\\ \\\\ Micro-Strip Gas Chambers (GMSC) are a promising high rate, high resolution position detector suited for use in high luminosity hadron collider experiments, as general purpose tracker or to improve the performances of preshower counters, transition radiation and inner muon detectors. Large GMSC arrays have been included in proposed LHC and SSC experimental setups. The operating characteristics of GMSC make their use very attractive also for detectors at tau/beauty/charm factories, as well as for synchrotron radiation facilities and medical applications. At the present state of the art, some problems limiting the usefulness of microstrip chambers are the observed gain changes due to charging up of the support, possible long-term degradation due to ageing, limited sizes imposed by fabrication technologies and unavailability of dedicated high-speed, high-density readout electronics. Limited experience exists of operation of GMSC in real experimental conditions, and little if anything is known about p...

Development of a High-Stability Microstrip-based L-band Radiometer for Ocean Salinity Measurements

Science.gov (United States)

Pellerano, Fernando A.; Horgan, Kevin A.; Wilson, William J.; Tanner, Alan B.

2004-01-01

The development of a microstrip-based L-band Dicke radiometer with the long-term stability required for future ocean salinity measurements to an accuracy of 0.1 psu is presented. This measurement requires the L-band radiometers to have calibration stabilities of less than or equal to 0.05 K over 2 days. This research has focused on determining the optimum radiometer requirements and configuration to achieve this objective. System configuration and component performance have been evaluated with radiometer test beds at both JPL and GSFC. The GSFC testbed uses a cryogenic chamber that allows long-term characterization at radiometric temperatures in the range of 70 - 120 K. The research has addressed several areas including component characterization as a function of temperature and DC bias, system linearity, optimum noise diode injection calibration, and precision temperature control of components. A breadboard radiometer, utilizing microstrip-based technologies, has been built to demonstrate this long-term stability.

Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

CERN Document Server

Cerjan, C J

2000-01-01

The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

Microstrip Resonator for High Field MRI with Capacitor-Segmented Strip and Ground Plane

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

2017-01-01

) segmenting stripe and ground plane of the resonator with series capacitors. The design equations for capacitors providing symmetric current distribution are derived. The performance of two types of segmented resonators are investigated experimentally. To authors’ knowledge, a microstrip resonator, where both......, strip and ground plane are capacitor-segmented, is shown here for the first time....

Silicon strip detectors for the ATLAS HL-LHC upgrade

CERN Document Server

Gonzalez Sevilla, S; The ATLAS collaboration

2011-01-01

The LHC upgrade is foreseen to increase the ATLAS design luminosity by a factor ten, implying the need to build a new tracker suited to the harsh HL-LHC conditions in terms of particle rates and radiation doses. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. We give an overview of the ATLAS tracker upgrade project, in particular focusing on the crucial innermost silicon strip layers. Results from a wide range of irradiated silicon detectors for the strip region of the future ATLAS tracker are presented. Layout concepts for lightweight yet mechanically very rigid detector modules with high service integration are shown.

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

CERN Document Server

Moll, Michael; Lindström, G

2000-01-01

We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

International Nuclear Information System (INIS)

Lefebvre, Michel; Minano Moya, Mercedes

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

Energy Technology Data Exchange (ETDEWEB)

Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

2010-07-01

Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

High flux operation of microstrip gas chambers on glass and plastic supports

International Nuclear Information System (INIS)

Bouclier, R.; Florent, J.J.; Gaudaen, J.; Millon, G.; Pasta, A.; Ropelewski, L.; Sauli, F.; Shekhtman, L.I.

1992-01-01

Recent observations on microstrip gas chambers realized on various glass and plastic supports are presented in this paper. Short term measurements indicate a rate capability up to and above 5x10 5 counts/s mm 2 . A long term exposure to radiation shows however gain modifications, dependent on the resistivity of the chamber substrate; a choice of low resistivity supports minimizes this effect. (orig.)

Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

International Nuclear Information System (INIS)

Bauer, C.

2003-10-01

This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

Performance of microstrip gas chambers in BNL-E885: a search for LAMBDA LAMBDA-hypernuclei

CERN Document Server

Landry, M; Davis, C A; Faszer, W; Gan, L; Lee, L; Page, S A; Ramsay, W D; Salomon, M; Oers, W T H

1999-01-01

The performance of MicroStrip Gas Chambers (MSGC) in BNL Experiment 885, a search for LAMBDA LAMBDA-hypernuclei, is detailed. Chambers with an active area of 80x50 mm sup 2 were instrumented and operated as a vertex detector in the experiment. Furthermore, two distinct types of microstrip prints were utilized in these chambers. Prints manufactured with Integrated Circuit (IC) photolithographic technology have fine tolerances and thin minimum trace widths, but can suffer from a high rate of defects per print and are more costly. Prints constructed with Printed Circuit (PC) photolithographic technology have coarser tolerances but relatively few defects per print, and are extremely cost-effective. Results of bench and beam tests of both IC and PC based MSGCs are presented and their performance in BNL-E885 is discussed. E885 marks the first use of PC based MSGCs in an experiment.

Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2018-01-01

For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

Improved Microstrip Antenna with HIS Elements and FSS Superstrate for 2.4 GHz Band Applications

Directory of Open Access Journals (Sweden)

Praphat Arnmanee

2018-01-01

Full Text Available This research presents a microstrip antenna integrated with the high-impedance surface (HIS elements and the modified frequency selective surface (FSS superstrate for 2.4 GHz band applications. The electromagnetic band gap (EBG structure was utilized in the fabrication of both the HIS and FSS structures. An FR-4 substrate with 120 mm × 120 mm × 0.8 mm in dimension (W × L × T and a dielectric constant of 4.3 was used in the antenna design. In the antenna development, the HIS elemental structure was mounted onto the antenna substrate around the radiation patch to suppress the surface wave, and the modified FSS superstrate was suspended 20 mm above the radiating patch to improve the directivity. Simulations were carried out to determine the optimal dimensions of the components and the antenna prototype subsequently fabricated and tested. The simulation and measured results were agreeable. The experimental results revealed that the proposed integrated antenna (i.e., the microstrip antenna with the HIS and FSS structures outperformed the conventional microstrip antenna with regard to reflection coefficient, the radiation pattern, gain, and radiation efficiency. Specifically, the proposed antenna could achieve the measured antenna gain of 10.14 dBi at 2.45 GHz and the reflection coefficient of less than −10 dB and was operable in the 2.39–2.51 GHz frequency range.

Adaptive Forming of the Beam Pattern of Microstrip Antenna with the Use of an Artificial Neural Network

Directory of Open Access Journals (Sweden)

Janusz Dudczyk

2012-01-01

Full Text Available Microstrip antenna has been recently one of the most innovative fields of antenna techniques. The main advantage of such an antenna is the simplicity of its production, little weight, a narrow profile, and easiness of integration of the radiating elements with the net of generators power systems. As a result of using arrays consisting of microstrip antennas; it is possible to decrease the size and weight and also to reduce the costs of components production as well as whole application systems. This paper presents possibilities of using artificial neural networks (ANNs in the process of forming a beam from radiating complex microstrip antenna. Algorithms which base on artificial neural networks use high parallelism of actions which results in considerable acceleration of the process of forming the antenna pattern. The appropriate selection of learning constants makes it possible to get theoretically a solution which will be close to the real time. This paper presents the training neural network algorithm with the selection of optimal network structure. The analysis above was made in case of following the emission source, setting to zero the pattern of direction of expecting interference, and following emission source compared with two constant interferences. Computer simulation was made in MATLAB environment on the basis of Flex Tool, a programme which creates artificial neural networks.

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

Energy Technology Data Exchange (ETDEWEB)

Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

2017-07-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

International Nuclear Information System (INIS)

Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

2017-01-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

Snaps to Connect Coaxial and Microstrip Lines in Wearable Systems

Directory of Open Access Journals (Sweden)

Tiiti Kellomäki

2012-01-01

Full Text Available Commercial snaps (clothing fasteners can be used to connect a coaxial cable to a microstrip line. This is useful in the context of wearable antennas, especially in consumer applications and disposable connections. The measured S-parameters of the transition are presented, and an equivalent circuit and approximate equations are derived for system design purposes. The proposed connection is usable up to 1.5 GHz (10 dB return loss condition, and the frequency range can be extended to 2 GHz if a thinner, more flexible coaxial cable is used.

A micro-strip gas counter test with the RD20 front-end

International Nuclear Information System (INIS)

Clergeau, J.F.; Contardo, D.; Haroutunian, R.; Smadja, G.

1994-05-01

A Micro-Strip Gas Counter equipped with the VLSI preamplifier of the RD20 chip has been tested with minimum ionizing particles. The measured pulse shape and the signal to noise ratio are presented. The time resolution of the detector is compared for the Ar/DME and DME/CO 2 gas mixtures. Three methods for the bunch crossing identification at LHC are discussed. (authors). 5 refs., 7 figs., 3 tabs

Summary of structural refinement in hi-silicon aluminium piston alloy with phosphorous as grain refiner

International Nuclear Information System (INIS)

Malik, F.A.; Sheikh, S.T.; Choudhry, A.A.

2003-01-01

Aluminium Silicon Alloys are extensively used in a wide variety of applications. There are numerous variables in composition, production control, final structure which can influence the mechanical properties of Hi - Silicon Piston alloys. Hypereutectic AlSi alloys develop coarse grain primary silicon crystals, which have a strong negative effect on the tensile strength, the ductility, and the hardness. These crystals slow machining and reduce the tool life considerably. Phosphorous addition produce a fine, evenly spread crystal structure, lamellar structure of the silicon changes into a granular structure. (author)

Gain Enhancement of a Microstrip Patch Antenna Using a Reflecting Layer

Directory of Open Access Journals (Sweden)

Anwer Sabah Mekki

2015-01-01

Full Text Available A low profile, unidirectional, dual layer, and narrow bandwidth microstrip patch antenna is designed to resonate at 2.45 GHz. The proposed antenna is suitable for specific applications, such as security and military systems, which require a narrow bandwidth and a small antenna size. This work is mainly focused on increasing the gain as well as reducing the size of the unidirectional patch antenna. The proposed antenna is simulated and measured. According to the simulated and measured results, it is shown that the unidirectional antenna has a higher gain and a higher front to back ratio (F/B than the bidirectional one. This is achieved by using a second flame retardant layer (FR-4, coated with an annealed copper of 0.035 mm at both sides, with an air gap of 0.04λ0 as a reflector. A gain of 5.2 dB with directivity of 7.6 dBi, F/B of 9.5 dB, and −18 dB return losses (S11 are achieved through the use of a dual substrate layer of FR-4 with a relative permittivity of 4.3 and a thickness of 1.6 mm. The proposed dual layer microstrip patch antenna has an impedance bandwidth of 2% and the designed antenna shows very low complexity during fabrication.

Problem-Matched Basis Functions for Microstrip Coupled Slot Antennas based on Transmission Line Greens Functions

NARCIS (Netherlands)

Bruni, S.; Llombart Juan, N.; Neto, A.; Gerini, G.; Maci, S.

2004-01-01

A general algorithm for the analysis of microstrip coupled leaky wave slot antennas was discussed. The method was based on the construction of physically appealing entire domain Methods of Moments (MoM) basis function that allowed a consistent reduction of the number of unknowns and of total

A fax-machine amorphous silicon sensor for X-ray detection

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

1996-10-01

Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

Soft- and hard-agglomerate aerosols made at high temperatures.

Science.gov (United States)

Tsantilis, Stavros; Pratsinis, Sotiris E

2004-07-06

Criteria for aerosol synthesis of soft-agglomerate, hard-agglomerate, or even nonagglomerate particles are developed on the basis of particle sintering and coalescence. Agglomerate (or aggregate) particles are held together by weak, physical van der Waals forces (soft agglomerates) or by stronger chemical or sintering bonds (hard agglomerates). Accounting for simultaneous gas phase chemical reaction, coagulation, and sintering during the formation and growth of silica (SiO2) nanoparticles by silicon tetrachloride (SiCl4) oxidation and neglecting the spread of particle size distribution, the onset of hard-agglomerate formation is identified at the end of full coalescence, while the onset of soft-agglomerate formation is identified at the end of sintering. Process conditions such as the precursor initial volume fraction, maximum temperature, residence time, and cooling rate are explored, identifying regions for the synthesis of particles with a controlled degree of agglomeration (ratio of collision to primary particle diameters).

Passivation of gas microstrip detectors and stability of long-term operation

International Nuclear Information System (INIS)

Salomon, M.; Armitage, J.; Chapman, G.; Dixit, M.; Dubeau, J.; Faszer, W.; Hamel, L.A.; Oakham, G.

1994-01-01

We have studied the long-term operation of gas microstrip detectors which have been passivated with a layer of nickel oxide. We have used as the active gas CF 4 /isobutane (80 : 20) and three different types of substrates: Tedlar, glass and Upilex. In all three cases we found that the detectors are stable after passivation and can operate for a month without changes in gain at rates of MHz. The total accumulated charge was approximately 100 mC. ((orig.))

Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

Directory of Open Access Journals (Sweden)

Shridhar N. Mathad

2016-03-01

Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

Ultrahigh frequency tunability of aperture-coupled microstrip antenna via electric-field tunable BST

Science.gov (United States)

Du, Hong-Lei; Xue, Qian; Gao, Xiao-Yang; Yao, Feng-Rui; Lu, Shi-Yang; Wang, Ye-Long; Liu, Chun-Heng; Zhang, Yong-Cheng; Lü, Yue-Guang; Li, Shan-Dong

2015-12-01

A composite ceramic with nominal composition of 45.0 wt%(Ba0.5Sr0.5)TiO3-55.0 wt%MgO (acronym is BST-MgO) is sintered for fabricating a frequency reconfigurable aperture-coupled microstrip antenna. The calcined BST-MgO composite ceramic exhibits good microwave dielectric properties at X-band with appropriate dielectric constant ɛr around 85, lower dielectric loss tan δ about 0.01, and higher permittivity tunability 14.8% at 8.33 kV/cm. An ultrahigh E-field tunability of working frequency up to 11.0% (i.e., from 9.1 GHz to 10.1 GHz with a large frequency shift of 1000 MHz) at a DC bias field from 0 to 8.33 kV/cm and a considerably large center gain over 7.5 dB are obtained in the designed frequency reconfigurable microstrip antenna. These results demonstrate that BST materials are promising for the frequency reconfigurable antenna. Project supported by the National Natural Science Foundation of China (Grant No. 11074040) and the Key Project of Shandong Provincial Department of Science and Technology, China (Grant No. ZR2012FZ006).

Bandwidth enhancement of a dual band planar monopole antenna using meandered microstrip feeding.

Science.gov (United States)

Ahsan, M R; Islam, M T; Habib Ullah, M; Misran, N

2014-01-01

A meandered-microstrip fed circular shaped monopole antenna loaded with vertical slots on a high dielectric material substrate (ε r = 15) is proposed in this paper. The performance criteria of the proposed antenna have been experimentally verified by fabricating a printed prototype. The experimental results show that the proposed antenna has achieved wider bandwidth with satisfactory gain by introducing meandered-microstrip feeding in assistant of partial ground plane. It is observed that, the -10 dB impedance bandwidth of the proposed antenna at lower band is 44.4% (600 MHz-1 GHz) and at upper band is 28% (2.25 GHz-2.95 GHz). The measured maximum gains of -1.18 dBi and 4.87 dBi with maximum radiation efficiencies have been observed at lower band and upper band, respectively. The antenna configuration and parametric study have been carried out with the help of commercially available computer-aided EM simulator, and a good accordance is perceived in between the simulated and measured results. The analysis of performance criteria and almost consistent radiation pattern make the proposed antenna a suitable candidate for UHF RFID, WiMAX, and WLAN applications.

Chemical polishing of epitoxial silicon wafer

International Nuclear Information System (INIS)

Osada, Shohei

1978-01-01

SSD telescopes are used for the determination of the kind and energy of charged particles produced by nuclear reactions, and are the equipments combining ΔE counters and E counters. The ΔE counter is a thin SSD which is required to be thin and homogeneous enough to get the high resolution of measurement. The SSDs for ΔE counters have so far been obtained by polishing silicon plates mechanically and chemically or by applying electrolytic polishing method on epitaxial silicon wafers, but it was very hard to obtain them. The creative etching equipment and technique developed this time make it possible to obtain thin SSDs for ΔE counters. The outline of the etching equipment and its technique are described in the report. The etching technique applied for the silicon films for ΔE counters with thickness of about 10 μm was able to be experimentally established in this study. (Kobatake, H.)

Double-sided FoxFET biased microstrip detectors

International Nuclear Information System (INIS)

Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

1994-01-01

The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

Metamaterial Embedded Wearable Rectangular Microstrip Patch Antenna

Directory of Open Access Journals (Sweden)

J. G. Joshi

2012-01-01

Full Text Available This paper presents an indigenous low-cost metamaterial embedded wearable rectangular microstrip patch antenna using polyester substrate for IEEE 802.11a WLAN applications. The proposed antenna resonates at 5.10 GHz with a bandwidth and gain of 97 MHz and 4.92 dBi, respectively. The electrical size of this antenna is 0.254λ×0.5λ. The slots are cut in rectangular patch to reduce the bending effect. This leads to mismatch the impedance at WLAN frequency band; hence, a metamaterial square SRR is embedded inside the slot. A prototype antenna has been fabricated and tested, and the measured results are presented in this paper. The simulated and measured results of the proposed antenna are found to be in good agreement. The bending effect on the performance of this antenna is experimentally verified.

Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

Directory of Open Access Journals (Sweden)

Ali Attaran

2014-01-01

Full Text Available Fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process has been presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200 μm thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.

Comparison of conventional and plant-extract disinfectant solutions on the hardness and color stability of a maxillofacial elastomer after artificial aging.

Science.gov (United States)

Guiotti, Aimée Maria; Goiato, Marcelo Coelho; Dos Santos, Daniela Micheline; Vechiato-Filho, Aljomar José; Cunha, Bruno Guandalini; Paulini, Marcela Borghi; Moreno, Amália; de Almeida, Margarete Teresa Gottardo

2016-04-01

Silicone elastomers undergo physical and chemical degradation with disinfecting solutions. Phytotherapy may be a suitable solution for disinfection. However, its effect on the properties of the silicone material is unknown. The purpose of this in vitro study was to evaluate the effect of disinfection with conventional and plant-extract solutions and of artificial aging on the hardness and color stability of a facial silicone associated with pigments and an opacifier. Four hundred specimens of silicone (MDX4-4210) were fabricated (5×6 mm). Two pigment shades and 1 dry opacifier were combined in the tested material, and 4 groups (n=10) were obtained: colorless (GI), colorless with opacifier (GII), medium pigment with opacifier (GIII), and black pigment with opacifier (GIV). Specimens were subjected to disinfection (30 days) using saline solution, water, and neutral soap (digital friction, 30 seconds), chlorhexidine 4%, Hydrastis canadensis, and Cymbopogon nardus extracts (immersion, 10 minutes). Shore A hardness (ASTM D2240) and color analyses were performed before and after disinfection. Specimens were then exposed to 1008 hours of artificial aging (ASTM 53) and subjected to final hardness and color readings. The results were analyzed with ANOVA and the Tukey significant difference test (α=.05). The opacifier increased the hardness (GII). For GII, the H. canadensis solution and the friction with water and soap promoted significantly reduced hardness; the friction also promoted a reduction in this property for GIV. The GIII was not affected after disinfection. A significant difference was found between the ΔE values of the specimens disinfected with H. canadensis, C. nardus, and chlorhexidine, and specimens subjected to saline solution and neutral soap. The hardness of MDX4-4210 after the experimental procedure was considered clinically acceptable for facial prostheses. All groups showed clinically unacceptable color alterations regardless of the disinfecting

Test-Beam Results on <100> Silicon Prototype Detectors with APV6 Front-End Chip Readout

CERN Document Server

Winkler, Matthias

2000-01-01

Results are presented using data collected during the X5 test-beam performed in August 1999. To achieve a good estimate of signal and noise values, the raw data are processed off-line by a dedicated reconstruction program. In particular, an efficient algorithm for pedestal, noise and common mode calculation was developed and tested. The intrinsic performances of an AC-coupled CMS silicon micro-strip multi-geometry prototype detector, with a <100> crystal orientation and a low resistivity ( 1~k Omega cm), are investigated. This detector was exposed to an irradiation fluence of 3 imes10^{14} p/cm ^2 , equivalent to 10 years of operation at LHC. The signal-to-noise ratio and the ghost rates per strip and per cm ^2 are presented, as a function of the bias voltage.

Development of the microstrip silicon detector for imaging of fast processes at a synchrotron radiation beam

Energy Technology Data Exchange (ETDEWEB)

Aulchenko, V. [Budker Institute of Nuclear Physics, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk, Russian Federtion (Russian Federation); Pruuel, E. [Lavrentiev Institute of Hydrodynamics, 630090 Novosibirsk, Russian Federtion (Russian Federation); Novosibirsk State University, 630090 Novosibirsk, Russian Federtion (Russian Federation); Shekhtman, L. [Budker Institute of Nuclear Physics, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk, Russian Federtion (Russian Federation); Ten, K. [Lavrentiev Institute of Hydrodynamics, 630090 Novosibirsk, Russian Federtion (Russian Federation); Tolochko, B. [Institute of Solid State chemistry and Mechanochemistry, 630090 Novosibirsk, Russian Federtion (Russian Federation); Novosibirsk State University, 630090 Novosibirsk, Russian Federtion (Russian Federation); Zhulanov, V. [Budker Institute of Nuclear Physics, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk, Russian Federtion (Russian Federation)

2017-02-11

In situ imaging of explosions allows to study material properties under very high pressures and temperatures. Synchrotron radiation (SR) is a powerful tool for such studies because of its unique time structure. Flashes of X-rays from individual bunches in a storage ring are so short that an object under study does not move more than 1–10 μm during exposure. If a detector is able to store images synchronously with bunches of an SR source the time resolution of such method will be determined by the duration of SR flash from individual bunch. New beam line at the VEPP-4M storage ring will allow to get X-Ray flux from each bunch close to 10{sup 6} photons/channel where channel area is 0.05×0.5 mm{sup 2} and average beam energy is about 30 keV. Bunches in the machine can be grouped into trains with 20 ns time gap. In order to meet these requirements a new detector development was started based on Si microstrip technology. The detector with a new dedicated front-end chip will be able to record images with maximum signal equivalent to 10{sup 6} photons/channel, with signal to noise ratio of ∼10{sup 3}, spatial resolution of 50 μm and maximum frame rate of 50 MHz. The detector has to drive very high peak and average currents without affecting the front-end chip, therefore a specific design of Si sensor should be developed. The front-end chip has to provide signal measurements with the dynamic range of about 10{sup 4} or more and recording of the signal to an analogue memory with the rate of 50 MHz. The concept of such detector is discussed in the paper. The results of the simulations of the main detector parameters and the results of the first measurements with the prototype sensors are presented.

A Study on the RF-DC Conversion Efficiency of Microstrip Patch Rectenna

Energy Technology Data Exchange (ETDEWEB)

Jung, Yang Ha; Youn, Dong Gi; Kim, Kwan Ho [Korea Electrotechnology Research Institute (Korea); Rhee, Young Chul [Kyungnam University (Korea)

2000-07-01

We designed and manufactured microstrip patch antenna mainly used in the rectenna and then analysed RF-DC conversion efficiency of wireless power transmission system. We analyse conversion efficiency of load, direction of linear and dual polization rectenna. We found that the maximum efficiency would be about 70% of load and direction in patch type. In conclusion, we found that total conversion efficiency is 64% - 71% in patch Rectenna. (author). 5 refs., 8 figs., 1 tab.

Automated testing of microstrip detectors readout system for dual x-ray dual energy

International Nuclear Information System (INIS)

Bolanos, L.; Cabal, A. E.; Diaz, A.; Swientek, K.; Giubellino, P.; Marzari-Chiesa, A.; Prino, F.; Ramello, L.

2008-01-01

Circuits that carry out the signal acquisition and processing by multiple channels are required in digital radiography. These circuits should be tested in order to characterize their performance. This paper describes an automated system to control (by a software, from a personal computer) the characterization of a system based on RX64DTH specific integrated circuits with microstrip detectors. The results are shown. (Author)

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

International Nuclear Information System (INIS)

Poley, Luise; Blue, Andrew; Bates, Richard

2016-03-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1 x 10 35 cm -2 s -1 after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb -1 , requiring the tracking detectors to withstand hadron equivalences to over 1 x 10 16 1 MeV neutrons per cm 2 . With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). Sub-strip resolution of the 74.5 μm strips was achieved for both detectors. Investigation of the p-stop diffusion layers between strips is shown in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stops regions between the strips rather than the strip pitch. The collected signal allowed for the identification of operating thresholds for both devices, making it possible to compare signal response between different versions of silicon strip detector modules.

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Energy Technology Data Exchange (ETDEWEB)

Poley, Luise [DESY, Hamburg (Germany); Blue, Andrew; Bates, Richard [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

2016-03-15

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1 x 10{sup 35} cm{sup -2}s{sup -1} after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb{sup -1}, requiring the tracking detectors to withstand hadron equivalences to over 1 x 10{sup 16} 1 MeV neutrons per cm{sup 2}. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). Sub-strip resolution of the 74.5 μm strips was achieved for both detectors. Investigation of the p-stop diffusion layers between strips is shown in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stops regions between the strips rather than the strip pitch. The collected signal allowed for the identification of operating thresholds for both devices, making it possible to compare signal response between different versions of silicon strip detector modules.

A Truncated Waveguide Fed by a Microstrip as a Radiating Element for High-Performance Automotive Anticollision Radars

Directory of Open Access Journals (Sweden)

Giovanni Andrea Casula

2012-01-01

Full Text Available A small truncated waveguide fed by a microstrip line through a transverse coupling slot is proposed and assessed as a high-performance antenna and array element in the K band and above. This antenna allows to obtain a high radiated power, with a very low cross-polar component in the radiated field. It is therefore particularly suitable for application in automotive anticollision radars. The proposed radiating element has been analyzed by a numerical code based on an in-house method of moments, and the microstrip feeding line has been modeled by its equivalent magnetic-wall waveguide. A linear array of such elements has been designed and matched with a BPF-inspired matching network allowing an in-band behavior suitable for anti-collision radar use, with an out-of-band rejection large enough to avoid the first receiving BPF.

Flexible microstrip antenna based on carbon nanotubes/(ethylene-octene copolymer) thin composite layer deposited on PET substrate

Science.gov (United States)

Matyas, J.; Olejnik, R.; Slobodian, P.

2017-12-01

A most of portable devices, such as mobile phones, tablets, uses antennas made of cupper. In this paper we demonstrate possible use of electrically conductive polymer composite material for such antenna application. Here we describe the method of preparation and properties of the carbon nanotubes (CNTs)/(ethylene-octene copolymer) as flexible microstrip antenna. Carbon nanotubes dispersion in (ethylene-octene copolymer) toluene solution was prepared by ultrasound finally coating PET substrate by method of dip-coating. Main advantages of PET substrate are low weight and also flexibility. The final size of flexible microstrip antenna was 5 x 50 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with the weight of only 0.402 g. Antenna operates at three frequencies 1.66 GHz (-6.51 dB), 2.3 GHz (-13 dB) and 2.98 GHz (-33.59 dB).

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

Science.gov (United States)

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

CERN Multimedia

2002-01-01

% RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

Mongoose: Creation of a Rad-Hard MIPS R3000

Science.gov (United States)

Lincoln, Dan; Smith, Brian

1993-01-01

This paper describes the development of a 32 Bit, full MIPS R3000 code-compatible Rad-Hard CPU, code named Mongoose. Mongoose progressed from contract award, through the design cycle, to operational silicon in 12 months to meet a space mission for NASA. The goal was the creation of a fully static device capable of operation to the maximum Mil-883 derated speed, worst-case post-rad exposure with full operational integrity. This included consideration of features for functional enhancements relating to mission compatibility and removal of commercial practices not supported by Rad-Hard technology. 'Mongoose' developed from an evolution of LSI Logic's MIPS-I embedded processor, LR33000, code named Cobra, to its Rad-Hard 'equivalent', Mongoose. The term 'equivalent' is used to infer that the core of the processor is functionally identical, allowing the same use and optimizations of the MIPS-I Instruction Set software tool suite for compilation, software program trace, etc. This activity was started in September of 1991 under a contract from NASA-Goddard Space Flight Center (GSFC)-Flight Data Systems. The approach affected a teaming of NASA-GSFC for program development, LSI Logic for system and ASIC design coupled with the Rad-Hard process technology, and Harris (GASD) for Rad-Hard microprocessor design expertise. The program culminated with the generation of Rad-Hard Mongoose prototypes one year later.

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

Prototype Si microstrip sensors for the CDF-II ISL detector

CERN Document Server

Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

1999-01-01

Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

3D silicon strip detectors

International Nuclear Information System (INIS)

Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-06-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

Fabrication of 3D Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

2012-06-06

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

Science.gov (United States)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

Hardness and electrochemical behavior of ceramic coatings on Inconel

Directory of Open Access Journals (Sweden)

C. SUJAYA

2012-03-01

Full Text Available Thin films of ceramic materials like alumina and silicon carbide are deposited on Inconel substrate by pulsed laser deposition technique using Q-switched Nd: YAG laser. Deposited films are characterized using UV-visible spectrophotometry and X-ray diffraction. Composite microhardness of ceramic coated Inconel system is measured using Knoop indenter and its film hardness is separated using a mathematical model based on area-law of mixture. It is then compared with values obtained using nanoindentation method. Film hardness of the ceramic coating is found to be high compared to the substrates. Corrosion behavior of substrates after ceramic coating is studied in 3.5% NaCl solution by potentiodynamic polarization and electrochemical impedance spectroscopy measurements. The Nyquist and the Bode plots obtained from the EIS data are fitted by appropriate equivalent circuits. The pore resistance, the charge transfer resistance, the coating capacitance and the double layer capacitance of the coatings are obtained from the equivalent circuit. Experimental results show an increase in corrosion resistance of Inconel after ceramic coating. Alumina coated Inconel showed higher corrosion resistance than silicon carbide coated Inconel. After the corrosion testing, the surface topography of the uncoated and the coated systems are examined by scanning electron microscopy.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.