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Sample records for hard semiconductor detectors

  1. New materials for radiation hard semiconductor detectors

    CERN Document Server

    Sellin, P J; CERN. Geneva

    2006-01-01

    We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 1035 cm-2s-1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiati...

  2. Radiation hardness of semiconductor detectors for high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Khludkov, S.S.; Stepanov, V.E.; Tolbanov, O.P. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Tekhnicheskij Inst.

    1996-06-14

    The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to play the basic role in the attainment of radiation hardness by high-resistivity semiconductor charged particle detectors exposed to neutron irradiation. (author).

  3. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

    2005-01-01

    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  4. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institut fuer Physik, Muenchen (Germany)]|[Max-Planck-Institut fuer Extraterrestrische Physik, Garching (Germany). Semiconductor Lab.

    1999-07-01

    The following topics were dealt with: semiconductor radiation detectors, basic semiconductor structures, semiconductors, energy measurement, radiation-level measurement, position measurement, electronics of the readout function, detectors with intrinsic amplification, detector technology, device stability, radiation hardness and device simulation.

  5. Material engineering for the development of ultra-radiation hard semiconductor detectors

    CERN Document Server

    Bruzzi, M

    2004-01-01

    A possible upgrade of the CERN Large Hadron Collider luminosity up to 10**3**5cm**-**2s**-**1 will rise the hadron fluences in the inner detector region of the future high energy physics experiments up to similar to 10**1**6cm**-**2, well beyond the present operational limits of state-of-art Si tracking detectors. The goal of the CERN RD50 collaboration is to push the semiconductor detector technology beyond these limits, through the development of radiation hard bulk materials and the optimisation of the electrode configuration of the device. Recent results of the RD50 collaboration concerning material engineering are presented.

  6. Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Khludkov, S.S. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.; Stepanov, V.E. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.; Tolbanov, O.P. [Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.

    1997-08-01

    A model of the radiation hardness of semiconductor detector materials is developed in terms of local charge neutrality (LCN). The non-ionizing energy deposition in GaAs has been calculated for protons with energies ranging from 1 to 25 GeV. Deep centres are shown to play a basic role in determining the radiation hardness of charged particle detectors fabricated from high-resistivity semiconductor material. (orig.).

  7. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  8. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  9. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  10. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  11. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  12. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Lab., Upton, NY (United States); Gatti, E. [Piazza Leonardo da Vinci 32, Milano (Italy)

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  13. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gatti, E. [Politecnico di Milano, Dipartimento di Elletronica e Informazione, Piazza Leondardo da Vinci 32, 20133 Milano (Italy)

    1995-07-10

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  14. Modelling semiconductor pixel detectors

    CERN Document Server

    Mathieson, K

    2001-01-01

    expected after 200 ps in most cases. The effect of reducing the charge carrier lifetime and examining the charge collection efficiency has been utilised to explore how these detectors would respond in a harsh radiation environment. It is predicted that over critical carrier lifetimes (10 ps to 0.1 ns) an improvement of 40 % over conventional detectors can be expected. This also has positive implications for fabricating detectors, in this geometry, from materials which might otherwise be considered substandard. An analysis of charge transport in CdZnTe pixel detectors has been performed. The analysis starts with simulation studies into the formation of contacts and their influence on the internal electric field of planar detectors. The models include a number of well known defect states and these are balanced to give an agreement with a typical experimental I-V curve. The charge transport study extends to the development of a method for studying the effect of charge sharing in highly pixellated detectors. The ...

  15. Semiconductor neutron detector

    Science.gov (United States)

    Ianakiev, Kiril D [Los Alamos, NM; Littlewood, Peter B [Cambridge, GB; Blagoev, Krastan B [Arlington, VA; Swinhoe, Martyn T [Los Alamos, NM; Smith, James L [Los Alamos, NM; Sullivan, Clair J [Los Alamos, NM; Alexandrov, Boian S [Los Alamos, NM; Lashley, Jason Charles [Santa Fe, NM

    2011-03-08

    A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.

  16. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  17. Microradiography with Semiconductor Pixel Detectors

    Science.gov (United States)

    Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiří; Holý, Tomáš; Platkevič, Michal; Pospíšil, Stanislav; Vavřík, Daniel; Vykydal, Zdeněk

    2007-11-01

    High resolution radiography (with X-rays, neutrons, heavy charged particles, …) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

  18. Applications of semiconductor detectors to nuclear medicine

    CERN Document Server

    Bradford-Barber, H

    1999-01-01

    Progress in the development of semiconductor detectors is being applied to improving the resolution and imaging performance of nuclear medicine cameras. Nuclear medicine is briefly described. Efforts to develop semiconductor cameras for both planar and tomographic imaging are reviewed.

  19. Electron gas grid semiconductor radiation detectors

    Science.gov (United States)

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  20. Radiation tolerant semiconductor sensors for tracking detectors

    CERN Document Server

    Moll, M

    2006-01-01

    The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” is developing radiation tolerant tracking detectors for the upgrade of the Large Hadron Collider at CERN (Super-LHC). One of the main challenges arising from the target luminosity of 1035 cm−2 s−1 are the unprecedented high radiation levels. Over the anticipated 5 years lifetime of the experiment a cumulated fast hadron fluence of about 1016 cm−2 will be reached for the innermost tracking layers. Further challenges are the expected reduced bunch crossing time of about 10 ns and the high track density calling for fast and high granularity detectors which also fulfill the boundary conditions of low radiation length and low costs. After a short description of the expected radiation damage after a fast hadron fluence of 1016 cm−2, several R&D approaches aiming for radiation tolerant sensor materials (defect and material engineering) and sensor designs (device engineering) are review...

  1. Semiconductor detectors with proximity signal readout

    Energy Technology Data Exchange (ETDEWEB)

    Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  2. RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

    CERN Document Server

    Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC

    2010-01-01

    The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

  3. Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

    CERN Multimedia

    Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Maneuski, D; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Marchiori, G; Gonella, L; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Oshea, V; Muenstermann, D; Holmkvist, C W; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Bomben, M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Villani, E G; Fox, H; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Chauveau, J; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Shepelev, A; Golubev, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Calderini, G; Briglin, D L; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T; Lange, J C

    2002-01-01

    The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

  4. Hard gap in epitaxial semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.

    2015-01-01

    information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting...... a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

  5. Superconducting detectors for semiconductor quantum photonics

    Energy Technology Data Exchange (ETDEWEB)

    Reithmaier, Guenther M.

    2015-05-07

    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  6. Calculation of transport parameters of gamma-radiation detectors based on semi-insulating semiconductors

    Directory of Open Access Journals (Sweden)

    Zakharchenko A. A.

    2008-06-01

    Full Text Available A method of fast determination of the high resistivity detector charge collection parameters with the use of the detector dosimetric characteristics and by means of mathematical simulation is proposed. A problem of calculation of charge collection parameters is investigated for planar gamma-radiation dosimetric detectors made from semi-insulating compound semiconductor CdTe (CdZnTe. An applicability of the considered method is verified by computer simulation for HgI2 gamma-radiation detectors. The considered method can be used in the development of both dosimetry and spectrometry devices for radiation monitoring and for monitoring of characteristic devices operating in hard radiation fields. KEY WORDS: mobility, life time, semiconductor detectors, semi-insulating semiconductors, CdTe, CdZnTe, HgI2, Monte-Carlo method.

  7. Direct conversion semiconductor detectors in positron emission tomography

    Science.gov (United States)

    Cates, Joshua W.; Gu, Yi; Levin, Craig S.

    2015-05-01

    Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

  8. A scaling rule of indentation hardness of semiconductors

    Science.gov (United States)

    Yonenaga, Ichiro; Suzuki, Takayoshi

    2003-03-01

    We report a scaling rule of the indentation hardness of semiconductor crystals from room temperature to their melting. The Vickers hardness of fifteen semiconductors, Si, Ge, SiC, AlN, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe and CdTe, has been investigated from room temperature to their melting points. The temperature dependences of the hardness H v of eleven of these semiconductors, namely those with a cubic structure, obey a universal relationship when H v and the temperature T are scaled respectively by the shear modulus G and by G b ^3 / k _B, with b being the magnitude of the Burgers vector and k B the Boltzmann constant. The scaling rule is the same as that found for the temperature dependence of the critical shear stress τ c for the 111 slip system. The result leads a link between hardness and macroscopic yielding (dislocation motion). The relationshipH v = (70 ˜ 100) τ c is deduced for the cubic semiconductors is about ten times as large as the value for metals.

  9. Use of semiconductor detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Akimov, Y.K.

    1977-01-01

    Various methods of detecting nuclear particles and ..gamma.. rays in high energy physics by means of semiconductor detectors are described. The principle attention is devoted to questions related to use of semiconductor detectors in study of particle scattering at small momentum transfers. Spectrometry of x rays and ..gamma.. rays in experiments with beam-particle stoppings in the target is discussed. Examples are given of use of semiconductor detectors simultaneously as a target. Appreciable space is given in the review to details of experimental technique.

  10. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka

    1999-01-01

    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  11. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  12. Future prospects for semiconductor detectors in high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Ludlam, T.

    1981-01-01

    The track measuring capabilities of wire chambers and silicon detectors are compared. The question of future prospects is addressed in terms of the limitations or breadth of application of semiconductor detectors. Properties of strip detectors, charge transfer devices, and microdetector arrays are briefly reviewed, and a general purpose detector facility and its detector requirements are described. Rate capability and pattern recognition of such a detector are discussed, and the need for improved mass and momentum resolution is examined. Miniaturization of calorimeter-based detectors is covered briefly. Use of detectors in experiments involving rare and complex events consisting of up to thousands of final state particles, and in experiments involving ultra-relativistic heavy ion collisions is discussed. (LEW)

  13. Mercuric iodide semiconductor detectors encapsulated in polymeric resin

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

    2015-07-01

    The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

  14. A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

    Science.gov (United States)

    Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

    2014-12-23

    An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Semiconductor radiation detectors technology and applications

    CERN Document Server

    2018-01-01

    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  16. Resolution degradation of semiconductor detectors due to carrier trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kozorezov, A.G. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom)]. E-mail: a.kozorezov@lancaster.ac.uk; Wigmore, J.K. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Owens, A. [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); Hartog, R. den [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); Peacock, A. [Science Payloads and Advanced Concepts Office, SCI-A, European Space Agency, ESTEC, Noordwijk (Netherlands); A Al-Jawhari, Hala [Department of Physics, King Abdulaziz University, Jeddah (Saudi Arabia)

    2005-07-01

    Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6-660 keV.

  17. Processing of Radiation Hard Particle Detectors on Czochralski Silicon

    CERN Document Server

    Tuovinen, Esa

    2012-01-01

    The purpose of this work was to study the radiation hardness of particle detectors. Silicon detectors are cost-effective andhave an excellent spatial resolution. Therefore, they are widely used in many high-energy physics experiments. It is knownthat oxygen improves the radiation hardness of silicon detectors. The natural way to have a high concentration of oxygen insilicon is to use magnetic Czochralski silicon (MCz-Si). MCz-Si has intrinsically a relatively uniform and high level ofoxygen (5x10^17 cm^3) compared to regular float-zone silicon (FZ-Si). Such a level is hard to attain with other methods,namely the diffusion oxygenation of float-zone silicon.In the Large Hadron Collider (LHC) and its potential upgrade, the luminosity and the fluencies of fast hadrons can be sohigh that detectors made of standard detector-grade FZ-Si might not survive the planned operating period. MCz-Si offers animprovement to the lifetime of particle detectors through improved radiation hardness.This thesis takes a process-orie...

  18. Semiconductors for room temperature nuclear detector applications

    CERN Document Server

    James, Ralph B

    1995-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

  19. Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Qingyu

    2008-10-17

    The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

  20. Radiation hard silicon microstrip detectors for use in ATLAS at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Johansen, Lars Gimmestad

    2005-07-01

    The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

  1. Development of radiation tolerant semiconductor detectors for the Super-LHC

    CERN Document Server

    Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

  2. Radiation hard strip detectors on oxygenated silicon

    CERN Document Server

    Andricek, L; Moser, H G; Richter, R H

    2002-01-01

    Recent results of the RD48 (ROSE) collaboration suggest the usage of oxygen enriched silicon for sensors operated in the harsh radiation environment of future high luminosity experiments. To investigate if the anticipated beneficial properties are still present after full processing of the wafers, strip detectors for the innermost ring of the ATLAS forward region have been fabricated on oxygen enriched silicon by CiS, Germany. These sensors, together with sensors on standard and thin substrates, have been exposed to 3.10/sup 14/ 24 Ge V/c protons/cm/sup 2/ at the CERN PS. We are presenting here the comparison between the sensors based on the CV measurements and the investigation of the charge collection efficiency obtained with a /sup 90/Sr source and the analogue readout chip SCT128A. (13 refs).

  3. Developments in semiconductor detector technology and new applications -- symposium summary

    CERN Document Server

    Kamae, T

    1999-01-01

    Most traditional silicon-based detectors have advanced close to their intrinsic limits and optimization of the front-end electronics has become most crucial in improving performance for specific applications. CdZnTe and CdTe, the most promising in the hard X-ray band, are now finding real commercial applications. Si drift-type detectors are among the few silicon-based detectors whose merits have not been fully exploited. When they are used as photodiodes and combined with new high-Z, high light-yield scintillators (eg. GSO), we can expect a break-through in MeV gamma-ray detection.

  4. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A

    2002-01-01

    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  5. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  6. Future semiconductor detectors using advanced microelectronics with post-processing, hybridization and packaging technology

    CERN Document Server

    Heijne, Erik H M

    2005-01-01

    Several challenges for tracking with semiconductor detectors in the high rate environment of future elementary particle physics experiments are discussed, such as reduction of spurious hits and ambiguities and identification of short-lived 'messenger' particles inside jets. To meet these requirements the instrumentation increasingly calls on progress in microelectronics. Advanced silicon integration technology for 3D packaging now offers post-processing of CMOS such as wafer thinning to 50µm and through-wafer vias of <10µm. These technologies might be applied to create new tracking detectors which can handle vertexing under the difficult rate conditions. The sensor layers can be only ~50µm thick with low noise performance and better radiation hardness by using small volume pixels. Multi-layer sensors with integrated coincidence signal processing could discriminate real tracks from various sources of background. Even in a ~400µm thick 3D assembly the vectors of tracks can be determined in ~10 degree bin...

  7. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  8. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  9. Radiation hardness of three-dimensional polycrystalline diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lagomarsino, Stefano, E-mail: lagomarsino@fi.infn.it; Sciortino, Silvio [National Institute of Nuclear Physics (INFN), Via B. Rossi, 1-3, 50019 Sesto Fiorentino (Italy); Department of Physics and Astronomy, University of Florence, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Bellini, Marco [European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, 50019 Sesto Fiorentino (Italy); Istituto Nazionale di Ottica (INO-CNR), Largo Enrico Fermi 6, 50125 Firenze (Italy); Corsi, Chiara [Department of Physics and Astronomy, University of Florence, Via G. Sansone 1, 50019 Sesto Fiorentino (Italy); European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, 50019 Sesto Fiorentino (Italy); Cindro, Vladimir [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Kanxheri, Keida; Servoli, Leonello [National Institute of Nuclear Physics (INFN), Via A. Pascoli, 06123 Perugia (Italy); Department of Physics, University of Perugia, Via A. Pascoli, 06123 Perugia (Italy); Morozzi, Arianna [Department of Engineering, University of Perugia, Via G. Duranti 93, 06125 Perugia (Italy); Passeri, Daniele [National Institute of Nuclear Physics (INFN), Via A. Pascoli, 06123 Perugia (Italy); Department of Engineering, University of Perugia, Via G. Duranti 93, 06125 Perugia (Italy); Schmidt, Christian J. [GSI Helmholtzzentrum für Schwerionenforschung, Planckstraße 1, 64291 Darmstadt (Germany)

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  10. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  11. Charge Collection Efficiency in a segmented semiconductor detector interstrip region

    Science.gov (United States)

    Alarcon-Diez, V.; Vickridge, I.; Jakšić, M.; Grilj, V.; Schmidt, B.; Lange, H.

    2017-09-01

    Charged particle semiconductor detectors have been used in Ion Beam Analysis (IBA) for over four decades without great changes in either design or fabrication. However one area where improvement is desirable would be to increase the detector solid angle so as to improve spectrum statistics for a given incident beam fluence. This would allow the use of very low fluences opening the way, for example, to increase the time resolution in real-time RBS or for analysis of materials that are highly sensitive to beam damage. In order to achieve this goal without incurring the costs of degraded resolution due to kinematic broadening or large detector capacitance, a single-chip segmented detector (SEGDET) was designed and built within the SPIRIT EU infrastructure project. In this work we present the Charge Collection Efficiency (CCE) in the vicinity between two adjacent segments focusing on the interstrip zone. Microbeam Ion Beam Induced Charge (IBIC) measurements with different ion masses and energies were used to perform X-Y mapping of (CCE), as a function of detector operating conditions (bias voltage changes, detector housing possibilities and guard ring configuration). We show the (CCE) in the edge region of the active area and have also mapped the charge from the interstrip region, shared between adjacent segments. The results indicate that the electrical extent of the interstrip region is very close to the physical extent of the interstrip and guard ring structure with interstrip impacts contributing very little to the complete spectrum. The interstrip contributions to the spectra that do occur, can be substantially reduced by an offline anti-coincidence criterion applied to list mode data, which should also be easy to implement directly in the data acquisition software.

  12. Present trends and realisations in readout electronics for semiconductor detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Gatti, E. (Politecnico di Milano (Italy). Ist. di Fisica); Manfredi, P.F. (Pavia Univ. (Italy). Ist. di Elettronica; Istituto Nazionale di Fisica Nucleare, Milan (Italy))

    1984-09-15

    Design criteria of signal processors for semiconductor detectors in high energy physics experiments are reviewed. Choice of input active devices of preamplifiers, detector-device capacitive matching, preamplifier configurations, variant and invariant signal processors are discussed. Several examples of processors for microstrip silicon detectors and for silicon detector telescopes are reviewed with particular emphasis on noise performance and high rate capabilities.

  13. A study of radiation-hard detectors using proton beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H. J.; Do, S. H. [Kyungbook National Univ., Daegu (Korea, Republic of)

    2007-04-15

    1) Proton flux monitoring with liquid and crystal scintillator a) development of radiation hard circulation type liquid scintillator b) proton flux monitoring with liquid scintillator system c) detector beam test with liquid scintillator trigger d) proton flux monitoring with GSO crystal. 2) Characterization of crystals with proton beam and beam energy monitoring a) Crystal growth and characterization of PbCl2 and CsCl b) Light output comparison of CsCl and CsCl:Ce with proton beam c) Proton beam energy measurement w/wo Al degrader by BGO, LYSO and GSO 3) Development of fast neutron detector a) neutron and gamma separation study with NE213 liquid scintillator and 400Mhz FADC b) A study of neutron and gamma separation with Cf-252 source.

  14. A study of radiation-hard detectors using proton beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H. J.; Do, S. H. [Kyungpook Nat. Univ., Daegu (Korea, Republic of)

    2006-05-15

    We studied radiation damage effect of inorganic and organic scintillators developed in Korea by proton beam irradiation using the MC-50 Cyclotron facility in Atomic Cancer Hospital. After developing radiation hard detectors, it can be used for the proton beam flux and energy monitoring in a real time. We also perform a research on electronics and DAQ for such a device. The following is our major study : a development of liquid scintillator, a development of plastic scintillator, a study on liquid scintillator response, simulation study of liquid scintillator by proton beam interaction, detector irradiation at MC-50 Cyclotron facility and a study of response change, a development of electronics for proton flux monitoring and a feasibility study of low proton flux monitoring, initial study of inorganic scintillator by the proton beamtest.

  15. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Theoretical Hardness of Wurtzite-Structured Semiconductors

    Science.gov (United States)

    Guo, Xiao-Ju; Xu, Bo; Liu, Zhong-Yuan; Yu, Dong-Li; He, Ju-Long; Guo, Li-Cong

    2008-06-01

    Vickers hardness calculations of eleven wurtzite-structured semiconductors are performed based on the microscopic hardness model. All the parameters are obtained from first-principles calculations. There are two types of chemical bonds in wurtzite-structured crystals. The overlap populations of the two types of chemical bonds in lonsdaleite are chosen as Pc for wurtzite structure. The calculated bond ionicity values of the wurtzite-structured semiconductors are in good agreement with the ionicities from the dielectric definition. When the hardness of wurtzite-structured crystal is higher than 20GPa, our calculated Vickers hardness is within 10% accuracy. Therefore, the hardness of novel wurtzite-structured crystal could be estimated from first-principles calculations.

  16. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  17. Determining dose rate with a semiconductor detector - Monte Carlo calculations of the detector response

    Energy Technology Data Exchange (ETDEWEB)

    Nordenfors, C

    1999-02-01

    To determine dose rate in a gamma radiation field, based on measurements with a semiconductor detector, it is necessary to know how the detector effects the field. This work aims to describe this effect with Monte Carlo simulations and calculations, that is to identify the detector response function. This is done for a germanium gamma detector. The detector is normally used in the in-situ measurements that is carried out regularly at the department. After the response function is determined it is used to reconstruct a spectrum from an in-situ measurement, a so called unfolding. This is done to be able to calculate fluence rate and dose rate directly from a measured (and unfolded) spectrum. The Monte Carlo code used in this work is EGS4 developed mainly at Stanford Linear Accelerator Center. It is a widely used code package to simulate particle transport. The results of this work indicates that the method could be used as-is since the accuracy of this method compares to other methods already in use to measure dose rate. Bearing in mind that this method provides the nuclide specific dose it is useful, in radiation protection, since knowing what the relations between different nuclides are and how they change is very important when estimating the risks

  18. Investigation of design parameters for radiation hard silicon microstrip detectors

    CERN Document Server

    Braibant, S; Feld, L; Frey, A; Fürtjes, A; Glessing, W D; Hammarström, R; Honma, A; Mannelli, M; Mariotti, C; Mättig, P; Migliore, E; Piperov, S; Runólfsson, O; Schmitt, B; Söldner-Rembold, S; Surrow, B

    2002-01-01

    In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 mu m and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either or crystal orientation, of resistivities between 1 and 6 k Omega cm and of thicknesses between 300 and 410 mu m. The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3*10/sup 14/ cm /sup -2/. (15 refs).

  19. Development of high temperature, radiation hard detectors based on diamond

    Energy Technology Data Exchange (ETDEWEB)

    Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

    2017-02-11

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

  20. Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

    Energy Technology Data Exchange (ETDEWEB)

    Rummel, Stefan

    2009-07-20

    The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e{sup -} at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e{sup -} using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed

  1. The study of response of wide band gap semiconductor detectors using the Geant4

    National Research Council Canada - National Science Library

    Hussain Riaz; Mirza Sikander M; Mirza Nasir M

    2014-01-01

    The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors...

  2. Semiconductor detector developments for high energy space astronomy

    Science.gov (United States)

    Meuris, A.

    2014-05-01

    The rise of high energy astrophysics and solar physics in the 20th century is linked to the development of space telescopes; since the 1960s they have given access to the X-ray and gamma-ray sky, revealing the most violent phenomena in the Universe. Research and developments in imaging concepts and sensing materials haven't stopped since yet to improve the sensitivity of the X-ray and gamma-ray observatories. The paper proposes an overview of instrument realizations and focuses on the innovative detection techniques and technologies for applications from 0.1 keV to 10 MeV energy range. Solid-state detectors are prominent solutions for space instrumentation because of their excellent imaging and spectroscopic capabilities with limited volume and power resources. Various detection concepts based on semiconductors (Compton camera, Cd(Zn)Te pixel hybrids, DePFET active pixel sensors) are under design or fabrication for the near-future missions like Astro-H, BepiColombo, Solar Orbiter. New technologies on sensing materials, front-end electronics, interconnect processes are under study for the next generation of instruments to push back our knowledge of star and galaxy formation and evolution.

  3. [Feasibility study of CdTe Semiconductor detector for gamma camera--evaluation of planar images].

    Science.gov (United States)

    Takayama, T; Nakamura, N; Motomura, N; Mori, I; Ozaki, T; Ohno, R

    2000-05-01

    To evaluate the performance of a semiconductor detector for use in a gammacamera system, we assembled a detector with a small field of view--1 inch x 1 inch and 1 inch x 2 inch--made from CdTe (Cadmium telluride). We then compared the planar images and energy resolution of the resulting detectors against those of a conventional gammacamera. Pixel pitch of the detector was 1.6 mm x 1.6 mm, and was manufactured by Acrorad Corporation. Average FWHM of the energy spectrum for the semiconductor detector was 5.11% (SD: 0.80%, Best: 3.26%, Worst: 6.68%). The planar images obtained were of a letter phantom made from pieces of lead and of an IMP brain phantom. Since the field of view of the semiconductor detector was small, the image of the IMP brain phantom was acquired by moving the semiconductor over the collimated detector module until the area of the entire phantom was covered. The images from the semiconductor assembly were compared with those from a conventional gammacamera using the same conditions, and it was found that visual image quality was superior to those of the conventional camera system.

  4. Status report of the hard x-ray detector

    Science.gov (United States)

    Yamada, Shin'ya; HXD Team

    2012-03-01

    The current status and the improvements of in-orbit calibration in the Hard X-ray Detector (HXD) on board Suzaku are presented. We have been extensively monitoring and calibrating the in-orbit HXD performance, and succeeded in keeping all the sensors working property without any significant troubles since the launch. To reduce the increasing thermal noise events due to radiation damage in the HXD-PIN, we have raised the analog/digital threshold levels and updated the corresponding responses of the PIN. Performing the calibration of the energy scale of the GSO, we have improved the accuracy of the energy scale and modeling of gain variations, and released the reprocessed data/background and the responses since April of 2010. These revised data of the GSO is usable down to 50 keV, consequently allowing us to utilize overlapping energy ranges of 50-70 keV between the PIN and the GSO. Based on these improvements, we have reproduced the HXD spectra of the Crab Nebula over 10-500 keV with the broken power law with a cutoff at about 120 keV.

  5. Recent results on the development of radiation-hard diamond detectors

    CERN Document Server

    Conway, J S; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Dabrowski, W; Da Graca, J; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jamieson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Plano, R; Polesello, P; Prawer, S; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Russ, J; Schnetzer, S; Sciortino, S; Somalwar, S V; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Thomson, G B; Trawick, M; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    Charged particle detectors made from chemical vapor deposition (CVD) diamond have radiation hardness greatly exceeding that of silicon- based detectors. The CERN-based RD42 Collaboration has developed and tested CVD diamond microstrip and pixel detectors with an eye to their application in the intense radiation environment near the interaction region of hadron colliders. This paper presents recent results from tests of these detectors. (4 refs).

  6. Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

    2015-07-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  7. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  8. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure.

    Science.gov (United States)

    Kjaergaard, M; Nichele, F; Suominen, H J; Nowak, M P; Wimmer, M; Akhmerov, A R; Folk, J A; Flensberg, K; Shabani, J; Palmstrøm, C J; Marcus, C M

    2016-09-29

    Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e 2 /h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

  9. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  10. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    Science.gov (United States)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  11. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

    DEFF Research Database (Denmark)

    Kjærgaard, Morten; Nichele, F; Suominen, Henri Juhani

    2016-01-01

    topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al......Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards......, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e(2)/h...

  12. Hybrid tracking detector based on semiconductor and gas technologies

    Science.gov (United States)

    Bashindzhagyan, George; Korotkova, Natalia; Romaniouk, Anatoli; Sinev, Nikolai; Tikhomirov, Vladimir

    2017-10-01

    New Silicon-Gas Pixel Detector (SiGPD) is the result of the further development already proposed Gas-Pixel Detector (GPD). The only disadvantage of GPD was the uncertainty of the particle arriving time. The problem can be solved by additional silicon pixels implementation inside existed electronic chip epitaxial layer during regular chip production. The cost of new Si-Gas Pixel Detector remains practically the same. The new detectors have self-triggering properties and can be used for a first level trigger generation in the particle physics experiments and for many other applications.

  13. Investigation of large area semiconductor strip detectors for use in low energy nuclear physics

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, N.; Dennert, H.; Eyrich, W.; Lehmann, A.; Moosburger, M.; Wirth, H. (Physikalisches Inst., Univ. Erlangen-Nuernberg (Germany))

    1992-03-01

    Commercial large area ion implanted semiconductor strip detectors were investigated in respect of depletion behaviour, using the 8 MeV-proton beam of the Erlangen Tandem Accelerator. A characteristic resistivity profile of the n-type silicon detector material was observed. The semiconductor counters were used in a coincidence experiment for detecting charged decay particles from the ({sup 6}Li, {sup 6}He p) reaction on {sup 12}C. Covering a total solid angle of 330 msr, they allowed the simultaneous measurement of a large number of angles. (orig.).

  14. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Science.gov (United States)

    Zhao, Xiaolong; Chen, Liang; He, Yongning; Liu, Jinliang; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting; Zhang, Zhongbing; Ouyang, Xiaoping

    2016-04-01

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 1013 Ω cm due to the compensation of the donor defects (VO) and acceptor defects (VZn and Oi) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  15. Calibration of a time-resolved hard-x-ray detector using radioactive sources

    Energy Technology Data Exchange (ETDEWEB)

    Stoeckl, C., E-mail: csto@lle.rochester.edu; Theobald, W.; Regan, S. P.; Romanofsky, M. H. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623-1299 (United States)

    2016-11-15

    A four-channel, time-resolved, hard x-ray detector (HXRD) has been operating at the Laboratory for Laser Energetics for more than a decade. The slope temperature of the hot-electron population in direct-drive inertial confinement fusion experiments is inferred by recording the hard x-ray radiation generated in the interaction of the electrons with the target. Measuring the energy deposited by hot electrons requires an absolute calibration of the hard x-ray detector. A novel method to obtain an absolute calibration of the HXRD using single photons from radioactive sources was developed, which uses a thermoelectrically cooled, low-noise, charge-sensitive amplifier.

  16. Defect analysis of silicon detectors made of different materials for radiation hardness

    CERN Document Server

    Dezillie, B; Li, Z

    1999-01-01

    A comparative study of the radiation hardness of single pad detectors, manufactured from standard float-zone (FZ) and epitaxial (Epi) n-type monocrystal silicon with comparable initial resistivity is presented. Detectors 2processed from FZ and Epi material with a low (400 OMEGA cm and 500 OMEGA cm) and a high (approx 2 k OMEGA cm) initial resistivity have been irradiated up to 4x10 sup 1 sup 4 n/cm sup 2 and measured under the same conditions in order to study the influence of the initial resistivity on the detector radiation hardness.

  17. Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

    Science.gov (United States)

    McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

    2010-12-21

    Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

  18. A new dimension to semiconductor detectors in high-energy physics and medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Wright, Victoria E-mail: v.wright@physics.gla.ac.uk; Davidson, D.; Mathieson, K.; O' Shea, V.; Pellegrini, G.; Roy, P.; Smith, K.; Rahman, M

    2003-11-01

    The search for new semiconductor detectors has led to interesting developments in recent years. As well as progress in the use of new materials, novel geometries have been tried. One idea being investigated is that of a '3D' detector. This has an array of electrodes that penetrate the detector bulk thus allowing these electrodes to be positioned closer to the interaction point than the comparable distance in a standard planar geometry. Methods of fabricating such a device have been investigated and subsequent devices characterised and compared with 3D simulations made using ISE-TCAD.

  19. Diffusion effects in semiconductor X-ray detectors with inhomogeneous distribution of electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Kozorezov, A.G. [Department of Physics, Lancaster University, Lancaster (United Kingdom)], E-mail: a.kozorezov@lancaster.ac.uk; Wigmore, J.K. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Owens, A.; Hartog, R. den [Advanced Technologies Section, Science Projects Department, European Space Agency, ESTEC, Noordwijk (Netherlands)

    2009-10-21

    We derive an expression for the charge output of an X-ray semiconductor detector taking account of carrier drift and diffusion. It is found that diffusion effects may strongly influence charge collection patterns at the edges of the collection zones. We show that, in multi-electrode detectors, carrier diffusion across the boundaries between collection and non-collection zones depends on the nature of the boundary surfaces and the biasing conditions. Diffusion effects for a ring-drift detector are illustrated, and the conditions derived under which diffusion effects for collection around the outer edge of the collection zone are fully suppressed by the drift.

  20. Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

    CERN Document Server

    AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

    The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

  1. Experimental characterization of semiconductor-based thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)

    2015-04-21

    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

  2. Use of semiconductor detectors in high-energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Manfredi, P.F.

    1984-09-01

    Solid state detecting devices, like silicon and germanium active targets, telescopes of silicon detectors and microstrip position-sensing chambers are discussed in their more significant applications in elementary-particle physics. Special attention is devoted to the limitations in their performances arising from the electrical noise in the front-end circuitry.

  3. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    Energy Technology Data Exchange (ETDEWEB)

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  4. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  5. Study of plasma oscillations in photoelectric semiconductor detectors

    Science.gov (United States)

    Luo, Bing-feng; Lu, Long-zhao; Cheng, Xiang-ai; Yu, Xiang-yang

    2016-10-01

    In this paper, the phenomena of plasma oscillations in silicon-based p-n junction photoelectric detector are researched. Starting from the classic Drift-Diffusion Model, the basic equations of photodetector with reverse bias under the radiation of femtosecond optical pulse were deduced. In our physical model, the carrier mobility in low electric field was introduced, and basic parameters including diffusion coefficients and damping coefficients were modified according to the nonlinear relation between carrier drift velocity and high electric field. A numerical algorithm base d on the finite difference method is proposed to solve the model. By solving the equations numerically, we obtained the transient dynamic behaviors of this kind of photoelectric detector, the current responses of the plasma oscillations phenomena, and the frequency of plasma oscillations, etc. By comparing the numerical solutions of plasma oscillations with approximate analytical solutions, we explored the reason for the difference between them.

  6. Inter-electrode charge collection in high-purity germanium detectors with amorphous semiconductor contacts

    Energy Technology Data Exchange (ETDEWEB)

    Looker, Q., E-mail: qlooker@lbl.gov [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States); Amman, M. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Vetter, K. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States)

    2015-05-01

    High-purity germanium (HPGe) radiation detectors with segmented signal readout electrodes combine excellent energy resolution with fine spatial resolution, opening exciting possibilities in radiation imaging applications. Segmenting the electrodes provides the ability to determine the positions of radiation interactions in the detector, but it also brings potential challenges that can inhibit performance. A challenge unique to segmented electrode detectors is collection of charge carriers to the gap between adjacent electrodes rather than to the electrodes themselves, which gives a deficit in the summed energy. While amorphous semiconductor electrical contacts have enabled a simplified fabrication process capable of fine electrode segmentation, the amorphous semiconductor passivation layer between electrodes is prone to inter-electrode charge collection. This article presents a study of the impact of fabrication process parameters on the energy deficit due to inter-electrode charge collection for double-sided strip detectors. Eight double-sided strip HPGe detectors were fabricated with amorphous germanium (a-Ge) and amorphous silicon (a-Si) contacts formed by sputter deposition. Each detector was evaluated for inter-electrode charge collection performance, using as a metric the deficit in the summed signal of two adjacent electrodes. It is demonstrated that both a-Ge and a-Si contacts can be produced with nearly non-existent inter-electrode charge collection when the appropriate combination of sputter gas hydrogen content and gas pressure are selected.

  7. Leakage current in high-purity germanium detectors with amorphous semiconductor contacts

    Energy Technology Data Exchange (ETDEWEB)

    Looker, Q., E-mail: qlooker@lbl.gov [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Amman, M. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Vetter, K. [Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States)

    2015-03-21

    Amorphous semiconductor electrical contacts on high-purity Ge radiation detectors have become a valuable technology because they are simple to fabricate, result in thin dead layers, block both electron and hole injection, and can readily be finely segmented as needed for applications requiring imaging or particle tracking. Though significant numbers of detectors have been successfully produced for a variety of applications using the amorphous semiconductor contact technology, there remains a need to better understand the dependence of performance characteristics, particularly leakage current, on the fabrication process parameters so that the performance can be better optimized. To this end, we have performed a systematic study of leakage current on RF-sputter-deposited amorphous-Ge (a-Ge) and amorphous-Si (a-Si) contacts as a function of process and operational parameters including sputter gas pressure and composition, number of detector temperature cycles, and time spent at room temperature. The study focused primarily on the current resulting from electron injection at the contact. Significant findings from the study include that a-Si produces lower electron injection than a-Ge, the time the detector spends at room temperature rather than the number of temperature cycles experienced by the detector is the primary factor associated with leakage current change when the detector is warmed, and the time stability of the a-Ge contact depends on the sputter gas pressure with a higher pressure producing more stable characteristics.

  8. Radiation-Hard Opto-Link for the Atlas Pixel Detector

    CERN Document Server

    INSPIRE-00083439; Arms, Kregg E.; Johnson, M.; Kagan, H.; Kass, R.; Rush, C.; Smith, S.; Ter-Antonian, R.; Zoeller, M.M.; Buchholz, P.; Holder, M.; Roggenbuck, A.; Schade, P.; Ziolkowski, M.

    2004-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the opto-boards and from irradiation studies with 24 GeV protons up to 33 Mrad (1.2 x 10^15 p/cm^2).

  9. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  10. Studies of the radiation hardness of oxygen-enriched silicon detectors

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F

    1999-01-01

    Detectors of high-energy particles sustain substantial structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long 'lifetime' detectors are required. This work report s about radiation hardness of silicon P-I-N devices fabricated from oxygen-enriched, high-resistivity material. The high and nearly uniform concentration of oxygen in float-zone silicon has been achie ved by diffusion of oxygen from SiO2 layers.

  11. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B

    1999-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  12. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  13. CdTe and CdZnTe semiconductor gamma detectors equipped with ohmic contacts

    CERN Document Server

    Lachish, U

    1999-01-01

    Semiconductor gamma detectors, equipped with ohmic contacts, are uniform and fast response devices that are not sensitive to hole trapping. Gamma generated charges flow within the detector bulk towards the ohmic contacts, and induce additional charge flow from the contacts towards them. The additional flow stems from the fundamental principles of Poisson and the continuity equations. Electrons flow from the negative contacts towards the holes and recombine with them, therefore, they overcome hole trapping. The ohmic contact effect transforms the detector into a single carrier device. Good quality ohmic contact detectors are achieved from a crystal grown by standard methods, that initially has too many traps, by adjustment of the Fermi level position within the forbidden band. The device design and its principle of operation are discussed.

  14. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    CERN Document Server

    Clark, A G; Donega, M; Ferrère, D; Fortin, R; García, J E; González, S; Hirt, C; Ikegami, Y; Kagan, H; Kohriki, T; Kondo, T; Lindsay, S; MacPherson, A; Mangin-Brinet, M; Mikulec, B; Moorhead, G F; Niinikoski, T O; Pernegger, H; Perrin, E; Roe, S; Taylor, G N; Terada, S; Unno, Y; Vos, M; Wallny, R; Weber, M

    2005-01-01

    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued.

  15. Effects of nuclear fusion produced neutrons on silicon semiconductor plasma X-ray detectors

    CERN Document Server

    Kohagura, J; Hirata, M; Numakura, T; Minami, R; Watanabe, H; Sasuga, T; Nishizawa, Y; Yoshida, M; Nagashima, S; Tamano, T; Yatsu, K; Miyoshi, S; Hirano, K; Maezawa, H

    2002-01-01

    The effects of nuclear fusion produced neutrons on the X-ray energy responses of semiconductor detectors are characterized. The degradation of the response of position-sensitive X-ray tomography detectors in the Joint European Torus (JET) tokamak is found after neutron exposure produced by deuterium-deuterium and deuterium-tritium plasma fusion experiments. For the purpose of further detailed characterization of the neutron degradation effects, an azimuthally varying-field (AVF) cyclotron accelerator is employed using well-calibrated neutron fluence. These neutron effects on the detector responses are characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory (KEK). The effects of neutrons on X-ray sensitive semiconductor depletion thicknesses are also investigated using an impedance analyser. Novel findings of (i) the dependence of the response degradation on X-ray energies as well as (ii) the recovery of the degraded detector response due to the detector bias applic...

  16. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  17. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  18. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz

    2014-01-01

    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  19. Calibration of the hard x-ray detectors for the FOXSI solar sounding rocket

    Science.gov (United States)

    Athiray, P. S.; Buitrago-Casas, Juan Camilo; Bergstedt, Kendra; Vievering, Juliana; Musset, Sophie; Ishikawa, Shin-nosuke; Glesener, Lindsay; Takahashi, Tadayuki; Watanabe, Shin; Courtade, Sasha; Christe, Steven; Krucker, Säm.; Goetz, Keith; Monson, Steven

    2017-08-01

    The Focusing Optics X-ray Solar Imager (FOXSI) sounding rocket experiment conducts direct imaging and spectral observation of the Sun in hard X-rays, in the energy range 4 to 20 keV. These high-sensitivity observations are used to study particle acceleration and coronal heating. FOXSI is designed with seven grazing incidence optics modules that focus X-rays onto seven focal plane detectors kept at a 2m distance. FOXSI-1 was flown with seven Double-sided Si Strip Detectors (DSSD), and two of them were replaced with CdTe detectors for FOXSI-2. The upcoming FOXSI-3 flight will carry DSSD and CdTe detectors with upgraded optics for enhanced sensitivity. The detectors are calibrated using various radioactive sources. The detector's spectral response matrix was constructed with diagonal elements using a Gaussian approximation with a spread (sigma) that accounts for the energy resolution of the detector. Spectroscopic studies of past FOXSI flight data suggest that the inclusion of lower energy X-rays could better constrain the spectral modeling to yield a more precise temperature estimation of the hot plasma. This motivates us to carry out an improved calibration to better understand the finer-order effects on the spectral response, especially at lower energies. Here we report our improved calibration of FOXSI detectors using experiments and Monte-Carlo simulations.

  20. Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes

    Science.gov (United States)

    Kong, Xiangzi; Liu, Caixia; Dong, Wei; Zhang, Xindong; Tao, Chen; Shen, Liang; Zhou, Jingran; Fei, Yongfeng; Ruan, Shengping

    2009-03-01

    In this letter, metal-semiconductor-metal (MSM) TiO2 ultraviolet (UV) detectors with Ni electrodes have been fabricated. TiO2 thin films were prepared by sol-gel method. At 5 V bias, the dark current of the detector with Ni electrode was 1.83 nA. High photoresponse of 889.6 A/W was found under irradiation of 260 nm UV light, which was much higher than those of other wide bandgap UV detectors with MSM structure. The high photoresponse was due to the great internal gain caused by the hole trapping at interface. The rise time of the device was 13.34 ms and the fall time was 11.43 s.

  1. Recent advances in the development of semiconductor detectors for very high luminosity colliders

    CERN Document Server

    Hartmann, Frank

    2010-01-01

    For the luminosity upgrade of the LHC, the SLHC, the tracking systems of the LHC experiments need to be replaced. A main concern is the extreme radiation hardness requirement up to $1 x 10^{16} cm^{-2}$ 1 MeV neutron equivalent. This paper describes an extract of recent results on radiation hardening technologies developed within the RD50 Collaboration (http://www.cern.ch/rd50) [1] for the tracker upgrades. Silicon detectors have been designed and produced on n- and p-type wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic disorder has been also investigated and correlated with the performance degradation of irradiated detectors.

  2. A review of design considerations for the sensor matrix in semiconductor pixel detectors for tracking in particle physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Sally E-mail: seidel@glueball.phys.unm.edu

    2001-06-11

    Methods have been developed to improve the reliability of silicon sensors, in particular for pixel detectors, and their resistance to radiation damage, as it is encountered in tracking detectors in particle physics experiments. The choice of wafer material, the processing techniques, and the sensor layout are discussed. Alternative semiconductor substrates and variations on the planar hybrid design are mentioned.

  3. Comment on ''Spectral Identification of thin film coated and solid form semiconductor neutron detectors'' by McGregor and Shultis

    Energy Technology Data Exchange (ETDEWEB)

    Hallbeck, S; Caruso, Anthony N.; Adenwalla, S; Brand, Jennifer I.; Byun, Dongjin; Jiang, Hualiang; Lin, J Y.; Losovyj, Ya B.; Lundstedt, C; McIlroy, David N.; Pitts, W K.; Robertson, B W.; Dowben, Peter A.

    2005-01-01

    While we welcome the attention paid to boron-rich semiconductor devices, several clarifications are indicated to a recent paper [1] modeling neutron capture in boron-rich semiconductor solid-state detectors

  4. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  5. Development and Studies of Novel Microfabricated Radiation Hard Scintillation Detectors With High Spatial Resolution

    CERN Document Server

    Mapelli, A; Haguenauer, M; Jiguet, S; Renaud, P; Vico Triviño, N

    2011-01-01

    A new type of scintillation detector is being developed with standard microfabrication techniques. It consists of a dense array of scintillating waveguides obtained by coupling microfluidic channels filled with a liquid scintillator to photodetectors. Easy manipulation of liquid scintillators inside microfluidic devices allow their flushing, renewal, and exchange making the active medium intrinsically radiation hard. Prototype detectors have been fabricated by photostructuration of a radiation hard epoxy resin (SU-8) deposited on silicon wafers and coupled to a multi-anode photomultiplier tube (MAPMT) to read-out the scintillation light. They have been characterized by exciting the liquid scintillator in the 200 micrometers thick microchannels with electrons from a 90Sr yielding approximately 1 photoelectron per impinging Minimum Ionizing Particle (MIP). These promising results demonstrate the concept of microfluidic scintillating detection and are very encouraging for future developments.

  6. Radiation-Hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector

    CERN Document Server

    Gan, K K; Johnson, M; Kagan, H; Kass, R; Rush, C; Smith, S; Ter-Antonian, R; Zöller, M; Ciliox, A; Holderb, M; Ziolkowski, M

    2006-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from circuits of final design and from irradiation studies with 24 GeV protons up to 80 Mrad (2.6 x 10^15 p/cm^2).

  7. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    INSPIRE-00083439; Arms, Kregg E.; Johnson, M.; Kagan, H.; Kass, R.; Rush, C.; Smith, S.; Ter-Antonian, R.; Zoeller, M.M.; Ciliox, A.; Holder, M.; Ziolkowski, M.

    2005-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 mm CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from circuits of final design and from irradiation studies with 24 GeV protons up to 62 Mrad (2.3 x 10^15 p/cm^2).

  8. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    Kass, R; Gan, K K; Johnson, M; Kagan, H; Rush, C J; Rahimi, A; Smith, S; Ter-Antonian, R; Zoeller, M M; Ciliox, A; Holder, M; Nderitu, S; Ziolkowski, M

    2003-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 um CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results from prototype circuits and from irradiation studies with 24 GeV protons up to 57 Mrad (1.9 x 10e15 p/cm2).

  9. Semiconductor Radiation Detectors: Basic principles and some uses of a recent tool that has revolutionized nuclear physics are described.

    Science.gov (United States)

    Goulding, F S; Stone, Y

    1970-10-16

    The past decade has seen the rapid development and exploitation of one of the most significant tools of nuclear physics, the semiconductor radiation detector. Applications of the device to the analysis of materials promises to be one of the major contributions of nuclear research to technology, and may even assist in some aspects of our environmental problems. In parallel with the development of these applications, further developments in detectors for nuclear research are taking place: the use of very thin detectors for heavyion identification, position-sensitive detectors for nuclear-reaction studies, and very pure germanium for making more satisfactory detectors for many applications suggest major future contributions to physics.

  10. Development and characterization of a 3D CdTe:Cl semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Avenel, Marie-Laure [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France); Farcage, Daniel [CEA, DEN-DPC, F-91191 Gif Sur Yvette (France); Ruat, Marie; Verger, Loieck [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France); Gros d' Aillon, Eric, E-mail: eric.grosdaillon@cea.fr [CEA, LETI, MINATEC-Campus, 17 rue des Martyrs, F-38054 Grenoble (France)

    2012-04-11

    Conventional semiconductor radiation detectors for medical imaging use either a planar structure or a pixelated structure. These structures exhibit a natural trade-off between the absorption of incident photons and the collection of free charge carriers, resulting in a limited choice of detection materials. Such a trade-off can be avoided using a 3D structure in which electrodes are drilled into the detection volume. A prototype 3D semiconductor detector has been developed, using CdTe:Cl. A laser drilling technique was used to create electrodes in the volume of the material. The electrodes were contacted using electroless Au deposition. The manufacturing process and the first spectrometric results obtained with {sup 241}Am and {sup 57}Co irradiation are presented below. Synchrotron X-ray irradiation was also performed at the European Synchrotron Radiation Facility (ESRF) at an incident energy of 60 keV. An individual photon-counting ability was exhibited. These results will be used as a proof of concept for investigating 3D detectors in the medical-imaging energy range.

  11. Verification of MCNP simulation according to various widths of shielding using by CZT semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Sorin; Park, Gyeongseok; Kim, Hyeondae [Energy And Environment Systems Co. Ltd., Daejeon (Korea, Republic of); Kang, Hwa Yoon; Lee, Byoungil; Kim, Jeongin; Kang, Seo Kon [Korea Hydro and Nuclear Power Co. Ltd., Daejeon (Korea, Republic of)

    2014-05-15

    The program has EMECC (Ensemble de Mesure et d'Etude de la Contamination des Circuits) and CZT (Cadmium Zinc Telluride) campaign which are tools to analyze nuclides at a NPP. AEP (American Electric Power) also introduced another type CZT detector to perform source term monitoring and they had announced the results through the ISOE (Information System on Occupational Exposure). Energy And Environment Systems Co., Ltd(ENESYS) and Korea Hydro and Nuclear Power Co., Ltd(KHNP), Radiation Health Research Institute(RHRI) are developing the CZT Monitoring System to measure source terms, such as CRUDs(Chalk River Unidentified Deposits) in the Primary Coolant System using by CZT semiconductor. A CZT semiconductor detector is good to monitor source terms at a NPP in that it is possible to make a portable type because it does not need any cooling system at room temperature and it has good energy resolution. The CZT Monitoring System can measure activity of CRUDs with analysis of detected gamma spectrum but it is must considered detector efficiency, spatial distribution of radiation source, geometry of materials between detector and radiation source. Because they affect gamma spectrum shape. This study conducted to calculate activity of source terms such as CRUD in pipe or steam generator at a NPP with in-vivo method. To known how it is in pipe of primary coolant system, as we mentioned, three factors are very important. We checked one of them, geometric effect, of use MC simulation and Measurement. The shielding effect result between MC and Measurement are almost all same with ± 5% error. As we expect the results are independent from dose rate (or distance) and a kind of detector size.

  12. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  13. Investigations on radiation hardness of DEPFET sensors for the Belle II detector

    Energy Technology Data Exchange (ETDEWEB)

    Ritter, Andreas, E-mail: andreas.ritter@hll.mpg.de [Halbleiterlabor, Max-Planck-Institut für Physik und Max-Planck-Institut für extraterrestrische Physik, Föhringer Ring 6, 80805 München (Germany); Andricek, Ladislav [Halbleiterlabor, Max-Planck-Institut für Physik und Max-Planck-Institut für extraterrestrische Physik, Föhringer Ring 6, 80805 München (Germany); Kleinohl, Tobias [Physikalisches Institut, Universität Bonn, Nussallee 12, 53115 Bonn (Germany); Koffmane, Christian [Halbleiterlabor, Max-Planck-Institut für Physik und Max-Planck-Institut für extraterrestrische Physik, Föhringer Ring 6, 80805 München (Germany); Faculty of Electrical Engineering and Computer Science, Sensor and Actuator Systems, TU Berlin, Einsteinufer 19, 10587 Berlin (Germany); Lütticke, Florian; Marinas, Carlos [Physikalisches Institut, Universität Bonn, Nussallee 12, 53115 Bonn (Germany); Moser, Hans-Günther; Ninkovic, Jelena; Richter, Rainer; Schaller, Gerhard; Schnecke, Martina; Schopper, Florian [Halbleiterlabor, Max-Planck-Institut für Physik und Max-Planck-Institut für extraterrestrische Physik, Föhringer Ring 6, 80805 München (Germany)

    2013-12-01

    In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10 MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production.

  14. High-resolution texture imaging with hard synchrotron radiation in the moving area detector technique

    CERN Document Server

    Wcislak, L; Klein, H; Garbe, U; Schneider, J R

    2003-01-01

    The orientation distribution of crystallites in polycrystalline materials (called texture) is usually measured by polycrystal X-ray diffraction by 'step-scanning' the sample in angular intervals in the order of 1 deg. This technique is not suited to fully exploit the low angular divergence of hard synchrotron radiation in the order of 'milliradian'. Hence, step-scanning was replaced by a continuous 'sweeping' technique using a continuously shifted area detector. In order to avoid overlapping from different reflections (hkl) a Bragg-angle slit was introduced. The 'moving-detector' technique can be applied to obtain images of orientation as well as of location distributions of crystallites in polycrystalline samples. It is suitable for imaging continuous 'orientation density' distribution functions as well as of 'grain-resolved' textures. The excellent features of high-energy synchrotron radiation combined with the moving area detector technique will be illustrated with several examples including very sharp def...

  15. Perfluorocarbons and their use in Cooling Systems for Semiconductor Particle Detectors

    CERN Document Server

    Vacek, V; Ilie, S; Lindsay, S

    2000-01-01

    We report on the development of evaporative fluorocarbon cooling for the semiconductor pixel and micro-strip sensors of inner tracking detector of the ATLAS experiment at the future CERN Large Hadron Collider (LHC). We proceeded with studies using perfluoro-n-propane (3M-"PFG 5030"; C3F8), perfluoro-n-butane (3M-"PFG 5040"; C4F10), trifluoro-iodo-methane (CF3I) and custom C3F8/C4F10 mixtures. Certain thermo-physical properties had to be verified for these fluids.

  16. Development of a novel 2D position-sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I

    2012-01-01

    A novel 2D position-sensitive semiconductor detector concept has been developed employing resistive electrodes in a single-sided silicon microstrip sensor. The resistive charge division method has been implemented reading out each strip at both ends, in order to get the second coordinate of an ionizing event along the strips length. Two generations of prototypes, with different layout, have been produced and characterized using a pulsed near infra-red laser. The feasibility of the resistive charge division method in silicon microstrip detectors has been demonstrated and the possibility of single-chip readout of the device has been investigated. Experimental data were compared with the theoretical expectations and the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The agreement between experimental and simulation results validates the developed simulation as a tool for the optimization of future sensor prototypes.

  17. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  18. Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam; hide

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  19. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Oldorf, Christian

    2015-08-15

    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular {sup 116}Cd, {sup 106}Cd and {sup 130}Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of {sup 116}Cd, a background rate in the order of 10{sup -3} counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10{sup 26} years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  20. Development of a gamma ray monitor using a CdZnTe semiconductor detector.

    Science.gov (United States)

    Rasolonjatovo, A H D; Shiomi, T; Nakamura, T; Nishizawa, H; Tsudaka, Y; Fujiwara, H; Araki, H; Matsuo, K

    2002-01-01

    The aim of this study was to develop a new X ray and gamma ray monitor using the CdZnTe semiconductor detector, which has high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of a 10 mm x 10 mm by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X ray and gamma ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10 mm x 10 mm x 2 mm and 3 mm x 3 mm x 2 mm coupled with a filter, the weighted sum of a few energy channels with different cut-off energies was finally found to achieve a flat energy response with an equivalent dose (counts per microSv) within +/-30% or +/- 10% deviation.

  1. Development and characterization of the lead iodide semiconductor detector; Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de

    2001-07-01

    A methodology for purification and growth of PbI{sub 2} crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ({sup 241}Am) alpha particle and ({sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for {sup 241} Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI{sub 2} crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  2. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    Science.gov (United States)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  3. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  4. Basic processes and scintillator and semiconductor detectors; Des processus de base aux detecteurs scintillateurs et semi-conducteurs

    Energy Technology Data Exchange (ETDEWEB)

    Bourgeois, C. [Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire]|[Paris-7 Univ., 75 (France)

    1994-12-31

    In the following course, the interaction of heavy charged particles, electrons and {Gamma} with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs.

  5. The hard X-ray response of epitaxial GaAs detectors

    CERN Document Server

    Owens, A; Kraft, S; Peacock, A; Nenonen, S; Andersson, H

    2000-01-01

    We report on hard X-ray measurements with two epitaxial GaAs detectors of active areas 2.22 mm sup 2 and thicknesses 40 and 400 mu m at the ESRF and HASYLAB synchrotron research facilities. The detectors were fabricated using high-purity material and in spite of an order of magnitude difference in depletion depths, they were found to have comparable performances with energy resolutions at -45 deg. C of approx 1 keV fwhm at 7 keV rising to approx 2 keV fwhm at 200 keV and noise floors in the range 1-1.5 keV. At energies <30 keV, the energy resolution was dominated by leakage current and electromagnetic pick-up, while at the highest energies measured, the resolutions approach the expected Fano limit (e.g., approx 1 keV near 200 keV). Both detectors are remarkably linear, with average rms non-linearities of 0.2% over the energy range 10-60 keV, which, taken in conjunction with Monte-Carlo results indicate that charge collection efficiencies must be in excess of 98%. This is consistent with material science me...

  6. Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector

    CERN Document Server

    Ziolkowski, M; Buchholz, P; Ciliox, A; Gan, K K; Holder, M; Johnson, M; Kagan, H; Kass, R; Nderitu, S; Rahimi, A; Rush, C J; Smith, S; Ter-Antonian, R; Zoeller, M M

    2004-01-01

    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the CERN Large Hadron Collider (LHC). The first circuit is a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode to be used for 80 Mbit/s data transmission from the detector. The second circuit is a Bi-Phase Mark, decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode on the detector side. During ten years of operation at the LHC, the ATLAS optical link circuitry will be exposed to a maximum total fluence of 10/sup 15/ 1-MeV-equivalent neutrons per cm/sup 2/. We have successfully implemented both ASICs in a commercial 0.25 mu m CMOS technology using standard layout techniques to enhance the radiation tolerance. Both chips are four- channel devices compatible with common cathode PIN and VCSEL arrays. We present results from final prototype circuits and from irradiation studies of both circuits with 24 GeV protons up to a total dose of 57 Mrad. (3 refs).

  7. Characterization of new semiconductor detectors for x-ray tomography in the ASDEX Upgrade Tokamak and its generalized physics interpretations

    Energy Technology Data Exchange (ETDEWEB)

    Cho, T.; Hirata, M.; Kohagura, J.; Kanke, S.; Takahashi, K.; Sakamoto, Y.; Okamura, T.; Yatsu, K.; Tamano, T. [Plasma Research Centre, University of Tsukuba, Ibaraki 305 (Japan); Hirano, K.; Maezawa, H. [National Institute for High Energy Physics, Ibaraki 305 (Japan); Tanaka, S. [Fukui National College of Technology, Fukui 916 (Japan); Bessenrodt-Weberpals, M. [Max-Planck-Institut Fuer Plasmaphysik, Garching (Germany)

    1997-01-01

    The energy response of a new semiconductor detector in the ASDEX Upgrade Tokamak for plasma x-ray tomography studies is characterized using synchrotron radiation from a 2.5 GeV positron storage ring at the National Institute for High Energy Physics in Japan. This international collaborating research clarifies a fairly good agreement between the x-ray energy response data and our recently proposed theoretical predictions for such a semiconductor x-ray-detector response. The x-ray response for several positions on the active area of the detector unit is studied; a good uniformity observed guarantees that the detector can employ any sized and shaped collimator for the x-ray tomography regardless of any correction factor coming from the response nonuniformity on the detector active area. Operational conditions of the detector for the ASDEX Upgrade plasma diagnostics are optimized using its capacitance measurements as a function of an applied bias as well as the numerical evaluations of the detector response; these are also directly verified by the synchrotron-radiation experiments. {copyright} {ital 1997 American Institute of Physics.}

  8. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-11-17

    Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

  9. CdZnTe Image Detectors for Hard-X-Ray Telescopes

    Science.gov (United States)

    Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

    2005-01-01

    Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

  10. Design and development of position sensitive detector for hard x-ray using SiPM and new generation scintillators

    Science.gov (United States)

    Goyal, S. K.; Naik, Amisha P.; N. P. S., Mithun; Vadawale, S. V.; Tiwari, Neeraj K.; Chattopadhyay, T.; Nagrani, N.; Madhavi, S.; Ladiya, T.; Patel, A. R.; Shanmugam, M.; Adalja, H. L.; Patel, V. R.; Ubale, G. P.

    2017-08-01

    There is growing interest in high-energy astrophysics community for the development of sensitive instruments in the hard X-ray energy extending to few hundred keV. This requires position sensitive detector modules with high efficiency in the hard X-ray energy range. Here, we present development of a detector module, which consists of 25 mm x 25 mm CeBr3 scintillation detector, read out by a custom designed two dimensional array of Silicon Photo-Multipliers (SiPM). Readout of common cathode of SiPMs provides the spectral measurement whereas the readout of individual SiPM anodes provides measurement of interaction position in the crystal. Preliminary results for spectral and position measurements with the detector module are presented here.

  11. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  12. Performance optimization for hard X-ray/soft gamma-ray detectors

    Science.gov (United States)

    Harrison, Fiona A.; Kahn, Steven M.; Hailey, Charles J.; Ziock, Klaus P.

    1990-01-01

    This paper discusses the optimization of the performance of imaging scintillation detectors used in the hard X-ray/soft gamma-ray (20-300) keV region of the spectrum. In these devices, absorption of an incident gamma-ray within an alkali halide crystal induces a scintillation light distribution which is centroided by an imaging photomultiplier tube mounted to the crystal. The ultimate imaging resolution is strongly affected by the detailed propagation of the scintillation light within the crystal and at the interface between the crystal and the phototube face plate. A number of refined techniques for preparing the scintillation crystals so as to optimize the imaging resolution have been investigated. The results indicate very good agreement with relatively simple models of the light propagation. It is shown that it is possible to achieve resolution consistent with the most optimistic models.

  13. Hard X-ray texture measurements with an on-line image plate detector

    CERN Document Server

    Wcislak, L; Tschentscher, T; Klein, H; Bunge, H J

    2001-01-01

    An instrument for diffraction texture measurements in polycrystalline bulk materials using hard X-ray photons from the wiggler beamline BW5 at HASYLAB is described. High-energy photons in the 100 keV regime enable high penetration power in medium-to-high Z materials and the use of Laue diffraction geometry in combination with a two-dimensional area detector allows fast and convenient data collection. Determination of quantitative, high-resolution pole figures with a better angular resolution of 0.1 deg. is attained by the instrument. Profile analysis of the diffraction pattern parameters for each (h k l)-reflection thus provides, in addition to texture data, information about other microstructural quantities, e.g. lattice strain.

  14. In-Orbit Performance of the Hard X-Ray Detector on Borad Suzaku

    Energy Technology Data Exchange (ETDEWEB)

    Kokubun, Motohide; Makishima, Kazuo; Takahashi, Tadayuki; Murakami, Toshio; Tashiro, Makoto; Fukazawa, Yasushi; Kamae, Tuneyoshi; M.Madejski, Greg; Nakazawa, Kazuhiro; Yamaoka, Kazutaka; Terada, Yukikatsu; Yonetoku, Daisuke; Watanabe, Shin; Tamagawa, Toru; Mizuno, Tsunefumi; Kubota, Aya; Isobe, Naoki; Takahashi, Isao; Sato, Goro; Takahashi, Hiromitsu; Hong, Soojing; /Tokyo U. /Wako, RIKEN /JAXA, Sagamihara /Kanazawa U. /Saitama U. /Hiroshima U. /Aoyama Gakuin U. /Nihon U., Narashino /SLAC

    2007-10-26

    The in-orbit performance and calibration of the Hard X-ray Detector (HXD) on board the X-ray astronomy satellite Suzaku are described. Its basic performances, including a wide energy bandpass of 10-600 keV, energy resolutions of {approx}4 keV (FWHM) at 40 keV and {approx}11% at 511 keV, and a high background rejection efficiency, have been confirmed by extensive in-orbit calibrations. The long-term gains of PIN-Si diodes have been stable within 1% for half a year, and those of scintillators have decreased by 5-20%. The residual non-X-ray background of the HXD is the lowest among past non-imaging hard X-ray instruments in energy ranges of 15-70 and 150-500 keV. We provide accurate calibrations of energy responses, angular responses, timing accuracy of the HXD, and relative normalizations to the X-ray CCD cameras using multiple observations of the Crab Nebula.

  15. Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Lindstroem, G. E-mail: gunnar.lindstroem@desy.de; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell' Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Mikuz, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D

    2001-07-01

    The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2x10{sup 17} O/cm{sup 3} in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5x10{sup 14} cm{sup -2} (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the 'Hamburg model': its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

  16. Pulse pile-up in hard X-ray detector systems. [for solar X-rays

    Science.gov (United States)

    Datlowe, D. W.

    1975-01-01

    When pulse-height spectra are measured by a nuclear detection system at high counting rates, the probability that two or more pulses will arrive within the resolving time of the system is significant. This phenomenon, pulse pile-up, distorts the pulse-height spectrum and must be considered in the interpretation of spectra taken at high counting rates. A computational technique for the simulation of pile-up is developed. The model is examined in the three regimes where (1) the time between pulses is long compared to the detector-system resolving time, (2) the time between pulses is comparable to the resolving time, and (3) many pulses occur within the resolving time. The technique is used to model the solar hard X-ray experiment on the OSO-7 satellite; comparison of the model with data taken during three large flares shows excellent agreement. The paper also describes rule-of-thumb tests for pile-up and identifies the important detector design factors for minimizing pile-up, i.e., thick entrance windows and short resolving times in the system electronics.

  17. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    CERN Document Server

    Stahle, C M; Parsons, A M; Barbier, L M; Barthelmy, S D; Gehrels, N A; Palmer, D M; Snodgrass, S J; Tüller, J

    1999-01-01

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests.

  18. Development of neutron/gamma generators and a polymer semiconductor detector for homeland security applications

    Science.gov (United States)

    King, Michael Joseph

    -energetic gamma generators that operate at low-acceleration energies and leverage neutron generator technologies. The dissertation focused on the experimental characterization of the generator performance and involved MCNPX simulations to evaluate and analyze the experimental results. The emission of the 11.7 MeV gamma-rays was observed to be slightly anisotropic and the gamma yield was measured to be 2.0*105 gamma/s-mA. The lanthanum hexaboride target suffered beam damage from a high power density beam; however, this may be overcome by sweeping the beam across a larger target area. The efficient detection of fast neutrons is vital to active interrogation techniques for the detection of both SNM and explosives. Novel organic semiconductors are air-stable, low-cost materials that demonstrate direct electronic particle detection. As part of the development of a pi-conjugated organic polymer for fast neutron detection, charge generation and collection properties were investigated. By devising a dual, thin-film detector test arrangement, charge collection was measured for high energy protons traversing the dual detector arrangement that allowed the creation of variable track lengths by tilting the detector. The results demonstrated that an increase in track length resulted in a decreased signal collection. This can be understood by assuming charge carrier transport along the track instead of along the field lines, which was made possible by the filling of traps. However, this charge collection mechanism may be insufficient to generate a useful signal. This dissertation has explored the viability of a new generation of radiation sources and detectors, where the newly developed ion source technologies and prototype generators will further enhance the capabilities of existing threat detection systems and promote the development of cutting-edge detection technologies.

  19. Radiation hardness and lifetime studies of the VCSELs for the ATLAS SemiConductor Tracker

    CERN Document Server

    Teng, P K; Chu, M L; Duh, T S; Gregor, I M; Hou, L S; Lee, S C; Song, P S; Su, D S

    2003-01-01

    Studies have been performed on the radiation hardness of the type of VCSELs**2 Vertical Cavity Surface Emitting Lasers. that will be used in the ATLAS SemicConductor Tracker. The measurements were made using 30 MeV proton beams, 24 GeV/c proton beams and a gamma source. The lifetime of the devices after irradiation was studied.

  20. Improvement of energy spectrum characteristics of CdZnTe semiconductor detector with a digital-analog fusion method

    CERN Document Server

    Mardiyanto, M P; Sakai, H; Kawarabayashi, J; Iguchi, T

    2000-01-01

    We present a new application of a 'Fusion Method' to improve gamma-ray energy spectrum characteristics of a CdZnTe semiconductor detector. A digital and an analog system are simultaneously applied for the detector output; The digital system digitizes the signal pulse shapes for pattern recognition based on a neural network algorithm. The analog measures the signal pulse heights with a conventional analog system. The digital and the analog output data are fused and then used for improvement of the energy spectrum characteristics, i.e. the photopeak area, the peak-to-valley ratio, and the FWHM of photopeaks.

  1. Diagnostic analysis of silicon strips detector readout in the ATLAS Semi-Conductor Tracker module production

    CERN Document Server

    Ciocio, Alessandra

    2005-01-01

    The ATLAS Semi-Conductor Tracker (SCT) Collaboration is currently in the production phase of fabricating and testing silicon strips modules for the ATLAS detector at the Large Hadron Collider being built at the CERN laboratory in Geneva, Switzerland. A small but relevant percentage of ICs developed a new set of defects after being mounted on hybrids that were not detected in the wafer screening. To minimize IC replacement and outright module failure, analysis methods were developed to study IC problems during the production of SCT modules. These analyses included studying wafer and hybrid data correlations to finely tune the selection of ICs and tests to utilize the ability to adjust front-end parameters of the IC in order to reduce the rejection and replacement rate of fabricated components. This paper will discuss a few examples of the problems encountered during the production of SCT hybrids and modules in the area of ICs performance, and will demonstrate the value of the flexibility built into the ABCD3T ...

  2. Calibration of semiconductor detectors in the 200-8500 keV range at VNIIM.

    Science.gov (United States)

    Tereshchenko, Evgeny E; Moiseev, Nikolay

    2012-09-01

    At the ionising radiation department of the D.I. Mendeleyev Institute for Metrology, a semiconductor detector was calibrated in the energy range 200-8500 keV using (n,2γ) and (n,γ) reactions. Separate cylindrical targets (77 mm diameter and 10mm height) were made from mercuric sulphate, sodium chloride and metallic titanium. A (252)Cf spontaneous fission neutron source, placed in 150 mm diameter polyethylene ball, was used to generate thermal neutrons. The optimal target dimensions were determined taking into account the thermal neutron cross-sections and gamma-radiation attenuations in the target materials. The influence of the background radiation induced by neutrons from the walls, floors and ceilings was also taken into account. The shapes of the efficiency curves for point and volume sources in the 200-8500 keV range have been investigated. The experimental results are in good agreement with Monte-Carlo calculations. The emission rate of the 6.13 MeV photons from a (238)Pu-(13)C source was determined with an expanded uncertainty, U(c), of 10% (k=2). Copyright © 2012 Elsevier Ltd. All rights reserved.

  3. Hard x-ray phase contrast imaging using single absorption grating and hybrid semiconductor pixel detector

    Science.gov (United States)

    Krejci, Frantisek; Jakubek, Jan; Kroupa, Martin

    2010-11-01

    A method for x-ray phase contrast imaging is introduced in which only one absorption grating and a microfocus x-ray source in a tabletop setup are used. The method is based on precise subpixel position determination of the x-ray pattern projected by the grating directly from the pattern image. For retrieval of the phase gradient and absorption image (both images obtained from one exposure), it is necessary to measure only one projection of the investigated object. Thus, our method is greatly simplified compared with the phase-stepping method and our method can significantly reduce the time-consuming scanning and possibly the unnecessary dose. Furthermore, the technique works with a fully polychromatic spectrum and gives ample variability in object magnification. Consequently, the approach can open the way to further widespread application of phase contrast imaging, e.g., into clinical practice. The experimental results on a simple testing object as well as on complex biological samples are presented.

  4. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    CERN Document Server

    Cho, T; Kohagura, J; Hirata, M; Minami, R; Watanabe, H; Sasuga, T; Nishizawa, Y; Yoshida, M; Nagashima, S; Nakashima, Y; Ogura, K; Tamano, T; Yatsu, K; Miyoshi, S

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO sub 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO sub 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availabi...

  5. The development of a high count rate neutron flux monitoring channel using silicon carbide semiconductor radiation detectors

    Science.gov (United States)

    Reisi Fard, Mehdi

    In this dissertation, a fast neutron flux-monitoring channel, which is based on the use of SiC semiconductor detectors is designed, modeled and experimentally evaluated as a power monitor for the Gas Turbine Modular Helium Reactors. A detailed mathematical model of the SiC diode detector and the electronic processing channel is developed using TRIM, MATLAB and PSpice simulation codes. The flux monitoring channel is tested at the OSU Research Reactor. The response of the SiC neutron-monitoring channel to neutrons is in close agreement to simulation results. Linearity of the channel response to thermal and fast neutron fluxes, pulse height spectrum of the channel, energy calibration of the channel and the detector degradation in a fast neutron flux are presented. Along with the model of the neutron monitoring channel, a Simulink model of the GT-MHR core has been developed to evaluate the power monitoring requirements for the GT-MHR that are most demanding for the SiC diode power monitoring system. The Simulink model is validated against a RELAP5 model of the GT-MHR. This dyanamic model is used to simulate reactor transients at the full power and at the start up, in order to identify the response time requirements of the GT-MHR. Based on the response time requirements that have been identified by the Simulink model and properties of the monitoring channel, several locations in the central reflector and the reactor cavity are identified to place the detector. The detector lifetime and dynamic range of the monitoring channel at the detector locations are calculated. The channel dynamic range in the GT-MHR central reflector covers four decades of the reactor power. However, the detector does not survive for a reactor refueling cycle in the central reflector. In the reactor cavity, the detector operates sufficiently long; however, the dynamic range of the channel is smaller than the dynamic range of the channel in the central reflector.

  6. Improvement of density resolution in short-pulse hard x-ray radiographic imaging using detector stacks

    Energy Technology Data Exchange (ETDEWEB)

    Borm, B.; Gärtner, F.; Khaghani, D. [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany); Johann Wolfgang Goethe-Universität, Frankfurt am Main (Germany); Neumayer, P. [GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany)

    2016-09-15

    We demonstrate that stacking several imaging plates (IPs) constitutes an easy method to increase hard x-ray detection efficiency. Used to record x-ray radiographic images produced by an intense-laser driven hard x-ray backlighter source, the IP stacks resulted in a significant improvement of the radiograph density resolution. We attribute this to the higher quantum efficiency of the combined detectors, leading to a reduced photon noise. Electron-photon transport simulations of the interaction processes in the detector reproduce the observed contrast improvement. Increasing the detection efficiency to enhance radiographic imaging capabilities is equally effective as increasing the x-ray source yield, e.g., by a larger drive laser energy.

  7. Experimental Evaluation And Simulation Of Multi-pixel Cadmium-zinc-telluride Hard-x-ray Detectors

    CERN Document Server

    Gaskin, J A

    2004-01-01

    This dissertation describes the evaluation of many-pixel Cadmium-Zinc-Telluride (CdZnTe) hard-X-ray detectors for future use with the High Energy Replicated Optics (HERO) telescope being developed at Marshall Space Flight Center. The detector requirements for the HERO application are good energy resolution (sufficient to resolve cyclotron features and nuclear lines), spatial resolution of ∼200 μm, minimal charge loss of absorbed X rays, and minimal sensitivity to the background environment. This research concentrates on assessing the suitability of these detectors for the focus of HERO, and includes the development of a simulation of the physics involved in an X-ray-detector interaction, a study of the intrinsic material properties, measurements with prototype detectors such as the energy and spatial resolution, charge loss, and X-ray background reduction through 3-dimensional depth sensing. Two types of detectors were available for evaluation. The first type includes 1-mm and 2-mm thick 4 x 4 ...

  8. The off-detector opto-electronics for the optical links of the ATLAS Semiconductor Tracker and Pixel detector

    CERN Document Server

    Chu, M L; Su, D S; Teng, P K; Goodrick, M; Kundu, N; Weidberg, T; French, M; MacWaters, C P; Matheson, J

    2004-01-01

    The off-detector part of the optical links for the ATLAS SCT and Pixel detectors is described. The VCSELs and p-i-n diodes used and the associated ASICs are described. A novel array packaging technique is explained and an analysis of the performance of the arrays and the overall system performance is given. The proposed procedure for the set-up of the optical links in ATLAS is described.

  9. Design and performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker

    CERN Document Server

    Dabrowski, W; Buttar, C M; Cindro, V; Clarks, A G; Dawson, I; Dorfan, D; Dubbs, T; Falconer, N; French, M; Greenall, A; Grillo, A A; Happer, R; Jarron, Pierre; Kaplon, J; Kudlaty, J; Kramberger, G; Lacasta, C; La Marra, D; Macina, Daniela; Mandic, I; Mikuz, M; Meddeler, G; Milgrome, O; Niggli, H; Phillips, P W; Roe, S; Smith, A; Spieler, H; Spencer, E; Szczygiel, R; Weilhammer, Peter; Wolter, M; Zsenei, A

    2000-01-01

    The ABCD design is a single chip implementation of the binary readout architecture for silicon strip detectors in the ATLAS semiconductor tracker. The prototype chip has been manufactured successfully in the DMILL process. In the paper we present the design of the chip and the measurement results. The basic analogue performance of the ABCD design has been evaluated using a prototype SCT module equipped with the ABCD chips. The digital performance has been evaluated using a general purpose IC tester. The measurements confirmed that all blocks of the ABCD design are fully functional and the chips meet all basic requirements of the SCT. (7 refs).

  10. Low-energy shelf response in thin energy-dispersive X-ray detectors from Compton scattering of hard X-rays

    Science.gov (United States)

    Michel-Hart, N.; Elam, W. T.

    2017-08-01

    Silicon drift detectors have been successfully employed in both soft and hard X-ray spectroscopy. The response function to incident radiation at soft X-ray levels has been well studied and modeled, but less research has been published on response functions for these detectors to hard X-ray input spectra above 20 keV. When used with hard X-ray sources a significant low energy, non-peak response exists which can adversely affect detection limits for lighter elements in, for example, X-ray fluorescence spectroscopy. We present a numerical model that explains the non-peak response function of silicon drift detectors to hard X-rays based on incoherent Compton scattering within the detector volume. Experimental results are presented and numerically compared to model results.

  11. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  12. LAMBDA 2M GaAs—A multi-megapixel hard X-ray detector for synchrotrons

    Science.gov (United States)

    Pennicard, D.; Smoljanin, S.; Pithan, F.; Sarajlic, M.; Rothkirch, A.; Yu, Y.; Liermann, H. P.; Morgenroth, W.; Winkler, B.; Jenei, Z.; Stawitz, H.; Becker, J.; Graafsma, H.

    2018-01-01

    Synchrotrons can provide very intense and focused X-ray beams, which can be used to study the structure of matter down to the atomic scale. In many experiments, the quality of the results depends strongly on detector performance; in particular, experiments studying dynamics of samples require fast, sensitive X-ray detectors. "LAMBDA" is a photon-counting hybrid pixel detector system for experiments at synchrotrons, based on the Medipix3 readout chip. Its main features are a combination of comparatively small pixel size (55 μm), high readout speed at up to 2000 frames per second with no time gap between images, a large tileable module design, and compatibility with high-Z sensors for efficient detection of higher X-ray energies. A large LAMBDA system for hard X-ray detection has been built using Cr-compensated GaAs as a sensor material. The system is composed of 6 GaAs tiles, each of 768 by 512 pixels, giving a system with approximately 2 megapixels and an area of 8.5 by 8.5 cm2. While the sensor uniformity of GaAs is not as high as that of silicon, its behaviour is stable over time, and it is possible to correct nonuniformities effectively by postprocessing of images. By using multiple 10 Gigabit Ethernet data links, the system can be read out at the full speed of 2000 frames per second. The system has been used in hard X-ray diffraction experiments studying the structure of samples under extreme pressure in diamond anvil cells. These experiments can provide insight into geological processes. Thanks to the combination of high speed readout, large area and high sensitivity to hard X-rays, it is possible to obtain previously unattainable information in these experiments about atomic-scale structure on a millisecond timescale during rapid changes of pressure or temperature.

  13. Studies of the underlying-event properties and of hard double parton scattering with the ATLAS detector

    CERN Document Server

    Kuprash, Oleg; The ATLAS collaboration

    2017-01-01

    A correct modelling of the underlying event in proton-proton collisions is important for the proper simulation of kinematic distributions of high-energy collisions. The ATLAS collaboration extended previous studies at 7 TeV with a leading track or jet or Z boson by a new study at 13 TeV, measuring the number and transverse-momentum sum of charged particles as a function of pseudorapidity and azimuthal angle in dependence of the reconstructed leading track. These measurements are sensitive to the underlying-event as well as the onset of hard emissions. The results are compared to predictions of several MC generators. + Inclusive four-jet events produced in proton--proton collisions at a center-of-mass energy of 7 TeV have been analyzed for the presence of hard double parton scattering collected with the ATLAS detector. The contribution of hard double parton scattering to the production of four-jet events has been extracted using an artificial neural network. The assumption was made that hard double parton scat...

  14. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  15. Position sensitive semiconductor detectors for 0.5 MeV gamma-rays

    Science.gov (United States)

    Dusi, W.; Caroli, E.; Di Cocco, G.; Donati, A.; Landini, G.; Stephen, J. B.; Casali, F.; Baldazzi, G.; Chirco, P.; Rossi, M.

    1992-12-01

    A small prototype cadmium telluride (CdTe) detector optimized for the detection of gamma-rays having an energy of the order of 500 keV was designed. This detector was arranged as an array of 5x5 CdTe crystals, each having dimensions of 2x2x10 cu mm, and was constructed primarily in order to verify its technical feasibility and performances. The initial aim in developing this type of detector was for use in space applications such as measurement of annihilation radiation (511 keV photons) from the galactic center and possibly from extragalactic objects as for example AGN's (Active Galactic Nucleus). Many other applications may also benefit from the use of CdTe position sensitive detectors, in linear or square configuration, such as nuclear medicine diagnostics, nondestructive testing in industrial quality assurance processes, and safety inspection and controls.

  16. Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-08-09

    This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm2 of active detector area.

  17. A spin-coherent semiconductor photo-detector for quantum communication

    Science.gov (United States)

    Vrijen, Rutger; Yablonovitch, Eli

    2001-06-01

    We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence band. The degeneracy of the valence band is lifted by the combination of strain and a static magnetic field. We give a detailed description of a semiconductor structure that transfers photon polarization to electron spin coherently, and allows electron spins to be stored and to be made available for quantum information processing.

  18. Hard X-ray polarimetry with position sensitve germanium detectors. Studies of the recombination transitions into highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Tashenov, Stanislav

    2005-07-01

    In this work a first study of the photon polarization for the process of radiative recombination has been performed. This was done at the ESR storage ring at GSI for uranium ions colliding with N2 at various collision energies. For this measurement a high purity Ge Pixel Detector with a 4 x 4 segmentation matrix was applied. The investigation was performed at the Gas-jet target of the ESR. The detector was placed at 60 and 90 observation angles. The sensitivity of the Compton scattering effect to the linear polarization of the X-Ray radiation was employed for the polarization measurement. Detailed investigations of the scattering and geometrical effects inside the detector were performed in order to develop a method to interpret the experimental data and extract the degree of the linear polarization in the hard X-Ray regime with a high precision. A special emphasis was given to the geometry of the detector and it's influence on the measured pixel-to-pixel Compton scattering intensities. The developed method enabled to achieve a precision of the order of 10% with the Pixel Detector which is dominated by the statistical uncertainties. The obtained results show a good agreement with the theoretical values derived from the exact relativistic calculations. For the case of the linear polarization of the K-REC photons, the measured data con rm the theoretical prediction that strong depolarization effects occur for high projectile charges in the forward hemisphere. The latter is in disagreement with the nonrelativistic theory which predicts a 100 % polarization regardless of the emission angle. (orig.)

  19. A spin-coherent semiconductor photo-detector for quantum communication

    OpenAIRE

    Vrijen, Rutger; Yablonovitch, Eli

    2000-01-01

    We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence band. The degeneracy of the valence band is lifted by the co...

  20. A Study to Improve the Radiation Hardness of Gaseous Detectors for Use at Very High Luminosities

    CERN Multimedia

    2002-01-01

    A two-year project is proposed to study the ageing of gas filled proportional detectors under irradiation. The goal is to obtain experimentally a better understanding of the gas polymerisation processes appearing at high radiation doses, in order to extend the lifetime of detectors well above the MRad region. \\\\ \\\\ The wide range of reported lifetimes is symptomatic of our poor understanding of the ageing process: often, measurements supposedly done under identical conditions result in very different lifetimes.\\\\ \\\\ The aim of this project is, with the knowledge gained, to construct a full scale prototype chamber on which future designs can be based. This will ultimately check the validity of our findings and results under realistic experimental circumstances. \\\\ \\\\ The study of ageing processes in gaseous detectors should commence with the construction of reference chambers.\\\\ \\\\ These chambers will be tested for signs of ageing by examination of the $^5

  1. Simulation of signals in ultra radiation-hard silicon pixel detectors

    CERN Document Server

    Lari, Tommaso

    2004-01-01

    A detailed simulation of silicon pixel detectors irradiated to very high fluences, in the range foreseen for vertex detectors after the Large Hadron Collider luminosity upgrade, is presented. The charge collection properties and the detector response were computed for different silicon materials (standard float zone, diffusion oxygenated float zone, Czochralski, epitaxial silicon) and operating conditions. At the maximum fluence (10/sup 16/ n/sub eq/cm/sup -2/) the signal is limited by charge trapping rather than by the thickness of the active volume. Since all the silicon materials studied so far have a similar trapping cross section, they are all expected to collect a signal of 2000-2500 electrons at 600 V bias voltage. A detection threshold of 1000-1200 electrons is required in order to have a 97% detection efficiency.

  2. LHCb: The Performance and Radiation Hardness of the Outer Tracker Detector for LHCb

    CERN Multimedia

    Färber, C

    2012-01-01

    The LHC bexperiment is designed to study B-decays at the LHC. It is crucial to accurately and efficiently detect the charged decay particles in the high-density particle environment of the LHC. For this, the Outer Tracker (OT) has been constructed, consisting of 53,760 straw tubes, covering in total an area of 360 m2 of double layers. At the time of the conference, the detector will have operated under nominal LHC conditions for a period of about 2 years, corresponding to an integrated luminosity of approximately 2.5 fb$^{-1}$ . The performance of the detector will be discussed in terms of high voltage stability, noise rate, single hit efficiency and resolution. Finally, first results on the radiation tolerance of this sensitive gas detector will be shown, after having received a total dose corresponding to about 100 mC/cm in the hottest region.

  3. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Theinert, Robert; Goessling, Claus; Kroeninger, Kevin [TU Dortmund, Experimentelle Physik IV, 44221 Dortmund (Germany)

    2016-07-01

    The COBRA collaboration aims to search for the neutrinoless double beta-decay of {sup 116}Cd. For this purpose, it operates a demonstrator setup with 64 CdZnTe detectors, each with a volume of 1 cm{sup 3}, at the LNGS underground laboratory in Italy. Double beta-decays are associated with half-lifes of more than 10{sup 25} years. To be sensitive to those half-lifes, a high detection efficiency and an ultra low-background setup are, among other aspects, important requirements. The usage of larger detectors is expected to improve the sensitivity. Detectors with a larger volume have a higher detection efficiency than the smaller ones. In addition, the background is reduced due to the lower surface-to-volume ratio. A large (2 x 2 x 1.5) cm{sup 3} CdZnTe detector with a new coplanar-grid design is characterized for applications in γ-ray spectroscopy and low-background operation. The four coplanar-grids on the anode side offer the possibility of separating the detector in four single sectors. The electric properties as well as the spectrometric performance, like energy response and resolution, are investigated in several measurements. Furthermore, studies concerning the operational stability and the possibility to identify multiple-scattered photons, are conducted.

  4. Soft x-ray intensity profile measurements of electron cyclotron heated plasmas using semiconductor detector arrays in GAMMA 10 tandem mirror

    Energy Technology Data Exchange (ETDEWEB)

    Minami, R., E-mail: minami@prc.tsukuba.ac.jp; Imai, T.; Kariya, T.; Numakura, T.; Eguchi, T.; Kawarasaki, R.; Nakazawa, K.; Kato, T.; Sato, F.; Nanzai, H.; Uehara, M.; Endo, Y.; Ichimura, M. [Plasma Research Center, University of Tsukuba, Tsukuba, Ibaraki 305-8577 (Japan)

    2014-11-15

    Temporally and spatially resolved soft x-ray analyses of electron cyclotron heated plasmas are carried out by using semiconductor detector arrays in the GAMMA 10 tandem mirror. The detector array has 16-channel for the measurements of plasma x-ray profiles so as to make x-ray tomographic reconstructions. The characteristics of the detector array make it possible to obtain spatially resolved plasma electron temperatures down to a few tens eV and investigate various magnetohydrodynamic activities. High power electron cyclotron heating experiment for the central-cell region in GAMMA 10 has been started in order to reduce the electron drag by increasing the electron temperature.

  5. Development of Tiled Imaging CZT Detectors for Sensitive Wide-Field Hard X-Ray Surveys to EXIST

    Science.gov (United States)

    Grindlay, J.; Hong, J.; Allen, B.; Barthelmy, S.; Baker, R.

    2011-01-01

    Motivated by the proposed EXIST mission, a "medium-class" space observatory to survey black holes and the Early Universe proposed to the 2010 NAS/NRC Astronomy and Astrophysics Decadal Survey, we have developed the first "large" area 256 sq cm close-tiled (0.6 mm gaps) hard X-ray (20-600 keV) imaging detector employing pixelated (2.5 mm) CdZnTe (CZT) detectors, each 2 x 2 x 0.5 cubic cm. We summarize the design, development and operation of this detector array (8 x 8 CZTs) and its performance as the imager for a coded aperture telescope on a high altitude (40 km) balloon flight in October. 2009, as the ProtoEX1STl payload. We then outline our current development of a second-generation imager, ProtcEXIST2. with 0.6 mm pixels on a 32 x 32 array on each CZT, and how it will lead to the ultimate imaging system needed for EXIST. Other applications of this technology will also be mentioned.

  6. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  7. Development of tiled imaging CZT detectors for sensitive wide-field hard X-ray surveys to EXIST

    Science.gov (United States)

    Grindlay, J.; Hong, J.; Allen, B.; Barthelmy, S.; Baker, R.

    2011-10-01

    Motivated by the proposed EXIST mission, a "medium-class" space observatory to survey black holes and the Early Universe proposed to the 2010 NAS/NRC Astronomy and Astrophysics Decadal Survey, we have developed the first "large" area 256 cm 2 close-tiled (0.6 mm gaps) hard X-ray (20-600 keV) imaging detector employing pixelated (2.5 mm) CdZnTe (CZT) detectors, each 2×2×0.5 cm 3. We summarize the design, development and operation of this detector array (8×8 CZTs) and its performance as the imager for a coded aperture telescope on a high altitude (40 km) balloon flight in October, 2009, as the ProtoEXIST1 payload. We then outline our current development of a second-generation imager, ProtoEXIST2, with 0.6 mm pixels on a 32×32 array on each CZT, and how it will lead to the ultimate imaging system needed for EXIST. Other applications of this technology will also be mentioned.

  8. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  9. Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

    CERN Document Server

    Jakšic, Zoran

    2014-01-01

    The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

  10. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

    Science.gov (United States)

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  12. Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

    CERN Document Server

    Quinn, T; Bruzzi, M; Cunningham, W; Mathieson, K; Moll, M; Nelson, T; Nilsson, H E; Pintillie, I; Rahman, M; Reynolds, L; Sciortino, S; Sellin, P J; Strachan, H; Svensson, B G; Vaitkus, J

    2003-01-01

    Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 10**1**4 hardrons/cm**2. Material of thickness 40um gave a charge collection efficiency of 100% dropping to around 60% at 100mum thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 10 **1**6/cm**2 as required by future particle physics experiments.

  13. SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, S [Wayne State University, Detroit, MI (United States); Kaye, W; Jaworski, J [H3D, Inc., Ann Arbor, MI (United States); He, Z [University of Michigan, Ann Arbor, MI (United States)

    2015-06-15

    Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinhole camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for

  14. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

    CERN Document Server

    Moll, Michael; Lindström, G

    2000-01-01

    We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irradiated with fast neutrons up to a fluence of 2*10/sup 15/ cm/sup -2/. Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10601130f the initial doping concentration for [O/sub i/]=9*10/sup 17/ cm/sup -3/, while for normal detector grade material with [O/sub i/] below 5*10/sup 16/ cm /sup -3/ that value is 60-90Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentratio...

  15. Radiation Hard Hybrid Pixel Detectors, and a bbbar Cross Section Measurement at the CMS Experiment

    CERN Document Server

    Sibille, Jennifer Ann; Rohe, Tilman Volker

    2013-01-01

    Measurements of heavy flavor quark production at hadron colliders provide agood test of the perturbative quantum chromodynamics (pQCD) theory. Itis also essential to have a good understanding of the heavy quark productionin the search for new physics. Heavy quarks contribute to backgrounds andsignals in measurements of higher mass objects, such as the Higgs boson. Akey component to each of these measurements is good vertex resolution. Inorder to ensure reliable operation of the pixel detector, as well as confidencein the results of analyses utilizing it, it is important to study the effects ofthe radiation on the detector.In the first part of this dissertation, the design of the CMS silicon pixeldetector is described. Emphasis is placed on the effects of the high radiation environment on the detector operation. Measurements of the chargecollection efficiency, interpixel capacitance, and other properties of the pixelsensors as a function of the radiation damage are presented.In the second part, a measurem...

  16. Radiation hardness and precision timing study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

    CERN Document Server

    Curras Rivera, Esteban

    2016-01-01

    The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering about 250 fba-1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 30 layers of silicon detectors totalling 600m^2. The sensors will be realized as pad detectors with cell sizes of between 0.5-1.0 cm^2 and an active thickness between 100 um and 300 um depending on their location in the endcaps the thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fba-1, the electromagnetic calorimetry will sustain integ...

  17. Fluorocarbon evaporative cooling developments for the ATLAS pixel and semiconductor tracking detectors

    CERN Document Server

    Anderssen, E; Berry, S; Bonneau, P; Bosteels, Michel; Bouvier, P; Cragg, D; English, R; Godlewski, J; Górski, B; Grohmann, S; Hallewell, G D; Hayler, T; Ilie, S; Jones, T; Kadlec, J; Lindsay, S; Miller, W; Niinikoski, T O; Olcese, M; Olszowska, J; Payne, B; Pilling, A; Perrin, E; Sandaker, H; Seytre, J F; Thadome, J; Vacek, V

    1999-01-01

    Heat transfer coefficients 2-5.103 Wm-2K-1 have been measured in a 3.6 mm I.D. heated tube dissipating 100 Watts - close to the full equivalent power (~110 W) of a barrel SCT detector "stave" - over a range of power dissipations and mass flows in the above fluids. Aspects of full-scale evaporative cooling circulator design for the ATLAS experiment are discussed, together with plans for future development.

  18. Infrared detector based on interband transition of semiconductor quantum well within p-n junction

    Science.gov (United States)

    Sun, Ling; Liu, Jie; Jia, Haiqiang; Wang, Wenxin; Wang, Lu; Chen, Hong

    2017-10-01

    Resonant excited carriers in quantum well will relax to the ground states and cannot escape from quantum wells to form photocurrent. However, it was recently observed that most of the photo-excited carriers in InGaAs/GaAs quantum wells within a p-n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The absorption coefficient of multiple quantum wells is also enhanced by a p-n junction. According to the phenomenon, a novel photon detector based on interband transition of strained InGaAs/GaAs quantum wells was fabricated. Without an anti-reflection layer, the external quantum efficiency up to 31% with only 100 nm absorption thickness was measured, corresponding an absorption coefficient of 3.7×104 cm-1 that is obviously higher than previously reported values. The room temperature detectivity of the device was 1.43×1013 cm Hz1/2 W-1. For strained InAsSb/GaSb quantum wells material system, the detector showed a narrow response range from 2.1 μm to 3.0 μm with a peak around 2.6 μm at 200 K and a wide response range from 3.5 μm to 5.7 μm. The photon detectors based on interband transition show great potential applications in infrared detection operating at high temperature.

  19. Optimizing the design and analysis of cryogenic semiconductor dark matter detectors for maximum sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Pyle, Matt Christopher [Stanford Univ., CA (United States)

    2012-01-01

    In this thesis, we illustrate how the complex E- field geometry produced by interdigitated electrodes at alternating voltage biases naturally encodes 3D fiducial volume information into the charge and phonon signals and thus is a natural geometry for our next generation dark matter detectors. Secondly, we will study in depth the physics of import to our devices including transition edge sensor dynamics, quasi- particle dynamics in our Al collection fins, and phonon physics in the crystal itself so that we can both understand the performance of our previous CDMS II device as well as optimize the design of our future devices. Of interest to the broader physics community is the derivation of the ideal athermal phonon detector resolution and it's T3 c scaling behavior which suggests that the athermal phonon detector technology developed by CDMS could also be used to discover coherent neutrino scattering and search for non-standard neutrino interaction and sterile neutrinos. These proposed resolution optimized devices can also be used in searches for exotic MeV-GeV dark matter as well as novel background free searches for 8GeV light WIMPs.

  20. Neural-based pile-up correction and ballistic deficit correction of X-ray semiconductor detectors using the Monte Carlo simulation and the Ramo theorem

    Science.gov (United States)

    Kafaee, Mahdi; Moussavi Zarandi, Ali; Taheri, Ali

    2016-03-01

    Pile-up distortion is a common problem in many nuclear radiation detection systems, especially in high count rates. It can be solved by hardware-based pile-up rejections, but there is no complete pile-up elimination in this way. Additionally, the methods can lead to poor quantitative results. Generally, time characteristics of semiconductor detector pulses are different from Scintillator detector pulses due to ballistic deficit. Hence, pulse processing-based pile-up correction in the detectors should consider this specification. In this paper, the artificial neural network pile-up correction method is applied for silicon detector piled-up pulses. For this purpose, the interaction of photons with a silicon detector is simulated by the MCNP4c code and the pulse current is calculated by Ramo's theorem. In this approach, we use a sub-Nyquist frequency sampling. The results show that the proposed method is reliable for pile-up correction and ballistic deficit in semiconductor detectors. The technique is remarkable for commercial considerations and high-speed, real-time calculations.

  1. Apertureless scanning microscope probe as a detector of semiconductor laser emission

    Energy Technology Data Exchange (ETDEWEB)

    Dunaevskiy, Mikhail, E-mail: Mike.Dunaeffsky@mail.ioffe.ru [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); National Research University of Information Technologies, Mechanics and Optics (ITMO), Saint-Petersburg 197101 (Russian Federation); Dontsov, Anton; Monakhov, Andrei [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); Alekseev, Prokhor; Titkov, Alexander [Ioffe Institute, Saint-Petersburg 194021 (Russian Federation); Saint Petersburg Electrotechnical University ' LETI,' Saint-Petersburg 197376 (Russian Federation); Baranov, Alexei; Girard, Paul; Arinero, Richard; Teissier, Roland [Institut d' Electronique du Sud, UMR 5214 UM2-CNRS, CC082, Université Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2015-04-27

    An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

  2. Nuclear myocardial perfusion imaging with a cadmium-telluride semiconductor detector gamma camera in patients with acute myocardial infarction.

    Science.gov (United States)

    Fukushima, Yoshimitsu; Kumita, Shin-ichiro; Kawaguchi, Tsuneaki; Maruyama, Takatoshi; Kawasaki, Yoshiyuki; Shinkai, Yasuhiro

    2014-08-01

    Since myocardial perfusion imaging (MPI) with conventional sodium iodine (NaI) device has low spatial resolution, there have been some cases in which small structures such as non-transmural myocardial infarction could not be properly detected. The purpose of this study was to evaluate potential usefulness of cadmium-telluride (CdTe) semiconductor detector-based high spatial resolution gamma cameras in detecting myocardial infarction sites, especially non-transmural infarction. A total of 38 patients (mean age ± SD: 64 ± 21 year) who were clinically diagnosed with acute myocardial infarction were included. Twenty-eight cases of them were with ST segment elevation myocardial infarction (STEMI) and 10 cases with non-ST segment elevation myocardial infarction (NSTEMI). In all patients, myocardial perfusion single photon emission computed tomography images were acquired with Infinia (NaI device) and R1-M (CdTe device), and the images were compared concerning the detectability of acute myocardial infarction sites. The detection rates of the myocardial infarction site in cases with STEMI were 100% both by NaI and CdTe images. In cases with NSTEMI, detection rate by NaI images was 50%, while that of CdTe images was 100% (p = 0.033). The summed rest score (SRS) value derived from CdTe images was significantly higher than that from NaI images in cases with STEMI [NaI images: 12 (7-18) versus CdTe images: 14 (9-20)] (p cases with NSTEMI [NaI images: 2 (0-5) versus CdTe images: 6 (6-8)] (p = 0.006). These results indicate that MPI using CdTe-semiconductor device will provide a much more accurate assessment of acute myocardial infarction in comparison to current methods.

  3. Studies of the underlying-event properties and of hard double parton scattering with the ATLAS detector

    CERN Document Server

    Kuprash, Oleg; The ATLAS collaboration

    2017-01-01

    A correct modelling of the underlying event in proton-proton collisions at Large Hadron Collider is important for the proper simulation of kinematic distributions of final state objects. The ATLAS collaboration performed a study at 13~TeV, measuring the number and transverse-momentum sum of charged particles in different regions with respect to the direction of the reconstructed leading track. These measurements are sensitive to the underlying-event activity. The results are compared to predictions of several Monte Carlo generators. Inclusive four-jet events produced in proton-proton collisions at a centre-of-mass energy of 7~TeV in the ATLAS detector have been analysed for the presence of hard double parton scattering. The fraction of events originating from hard double parton scattering has been extracted, and used to measure the effective proton cross section. Distributions sensitive to the presence of double parton scattering were unfolded to the parton level and compared to various tunes of a selected Mo...

  4. Trends in hard X-ray fluorescence mapping: environmental applications in the age of fast detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lombi, E.; Donner, E. [University of South Australia, Centre for Environmental Risk Assessment and Remediation, Mawson Lakes, South Australia (Australia); CRC CARE, PO Box 486, Salisbury, South Australia (Australia); Jonge, M.D. de; Paterson, D. [Australian Synchrotron, X-ray Fluorescence Microscopy, 800 Blackburn Road, Clayton, Victoria (Australia); Ryan, C.G. [CSIRO Earth Science and Resource Engineering, Normanby Road, Clayton, Victoria (Australia)

    2011-06-15

    Environmental samples are extremely diverse but share a tendency for heterogeneity and complexity. This heterogeneity poses methodological challenges when investigating biogeochemical processes. In recent years, the development of analytical tools capable of probing element distribution and speciation at the microscale have allowed this challenge to be addressed. Of these available tools, laterally resolved synchrotron techniques such as X-ray fluorescence mapping are key methods for the in situ investigation of micronutrients and inorganic contaminants in environmental samples. This article demonstrates how recent advances in X-ray fluorescence detector technology are bringing new possibilities to environmental research. Fast detectors are helping to circumvent major issues such as X-ray beam damage of hydrated samples, as dwell times during scanning are reduced. They are also helping to reduce temporal beamtime requirements, making particularly time-consuming techniques such as micro X-ray fluorescence ({mu}XRF) tomography increasingly feasible. This article focuses on {mu}XRF mapping of nutrients and metalloids in environmental samples, and suggests that the current divide between mapping and speciation techniques will be increasingly blurred by the development of combined approaches. (orig.)

  5. Radiation hardness and precision timing study of Silicon detectors for the CMS High Granularity Calorimeter (HGC)

    CERN Document Server

    Curras, E; Gallrapp, C; Gray, L; Mannelli, M; Meridiani, P; Moll, M; Nourbakhsh, S; Scharf, C; Silva, P; Steinbrueck, G; Tabarelli de Fatis, T; Vila, I

    2016-01-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb^−1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm^2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb^−1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10^16 neq/cm^2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μ...

  6. International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016)

    CERN Document Server

    Rossi, Leonardo; PIXEL2016

    2016-01-01

    The workshop will cover various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics and Astrophysics, and for X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics, environmental control and construction techniques. Emerging technologies, such as monolithic and HV&HR CMOS, will also be treated. Will be published in: http://pos.sissa.it/

  7. Biomedical imaging with the Medipix2 semiconductor detector at UniAndes

    Science.gov (United States)

    Caicedo, I.; Avila, C.; Gomez, B.; Bula, C.; Roa, C.; Sanabria, J.

    2012-02-01

    A set-up for X-Ray Imaging was developed using a Medipix2 MXR detector, a PHYWE X-Ray Unit, and a Step Motor as sample holder. An equalization and raw acquisitions were also performed. As the Beam Hardening effect arose in the radiographies, it was necessary to correct the images through a Direct Thickness Calibration. The result was the acquisition of high resolution (~μm) images from 10 to 35 keV with small exposure times. After the characterization of the set-up, it was used to image motionless and living tissue. Its feasibility to image samples bigger than its sensitive part and to use it for vascular imaging was also studied. Some of the tests were validated using Monte Carlo simulations (ROSI). The high granularity of the detector makes it suitable for micro-CT. Medipix2 has a very fast response (~ hundreds of nanoseconds) and high sensibility. These features allow obtaining nearly in-vivo high resolution (55μm* 55μm) images.

  8. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    CERN Document Server

    Jivan, Harshna; The ATLAS collaboration

    2014-01-01

    The Tile Calorimeter of the ATLAS detector, is a hadronic calorimeter responsible for detecting hadrons as well as accommodating for the missing transverse energy that result from the p-p collisions within the LHC. Plastic scintillators form an integral component of this calorimeter due to their ability to undergo prompt fluorescence when exposed to ionising particles. The scintillators employed are specifically chosen for their properties of high optical transmission and fast rise and decay time which enables efficient data capture since fast signal pulses can be generated. The main draw-back of plastic scintillators however is their susceptibility to radiation damage. The damage caused by radiation exposure reduces the scintillation light yield and introduces an error into the time-of flight data acquired. During Run 1 of the LHC data taking period, plastic scintillators employed within the GAP region between the Tile Calorimeter’s central and extended barrels sustained a significant amount of damage. Wit...

  9. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    Energy Technology Data Exchange (ETDEWEB)

    Currás, Esteban, E-mail: ecurrasr@cern.ch [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Fernández, Marcos [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Gallrapp, Christian [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Gray, Lindsey [Fermilab, Wilson Street and Kirk Road, Batavia, IL 60510-5011, Illinois (United States); Mannelli, Marcello [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Meridiani, Paolo [Istituto Nazionale Di Fisica Nucleare – Sezione di Roma, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Moll, Michael [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Nourbakhsh, Shervin [University of Minnesota, Minneapolis, MN 55455 (United States); Scharf, Christian [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Silva, Pedro [CERN, Organisation europnne pour la recherche nucleaire, CH-1211 Genéve 23 (Switzerland); Steinbrueck, Georg [Hamburg University, Notkestraße 85, 22607 Hamburg (Germany); Fatis, Tommaso Tabarelli de [Istituto Nazionale di Fisica Nucleare – Sezione di Milano-Bicocca Piazza della Scienza 3, 20126 Milano (Italy); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb{sup −1} per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm{sup 2} and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb{sup −1}, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10{sup 16} neq/cm{sup 2}. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10{sup 16} neq/cm{sup 2} is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  10. First Investigation on a novel 2D position sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I

    2012-01-01

    This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

  11. Quantum efficiency of a single microwave photon detector based on a semiconductor double quantum dot

    Science.gov (United States)

    Wong, Clement H.; Vavilov, Maxim G.

    2017-01-01

    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we consider a double quantum dot (DQD) capacitively coupled to a superconducting resonator that is driven by the microwave field of a superconducting transmission line. We analyze the DQD current response using input-output theory and show that the resonator-coupled DQD is a sensitive microwave single photon detector. Using currently available experimental parameters of DQD-resonator coupling and dissipation, including the effects of 1 /f charge noise and phonon noise, we determine the parameter regime for which incident photons are completely absorbed and near-unit ≳98 % efficiency can be achieved. We show that this regime can be reached by using very high quality resonators with quality factor Q ≃105 .

  12. Study of electron beams within ISTTOK tokamak by means of a multi-channel Cherenkov detector; their correlation with hard X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Jakubowski, L., E-mail: Lech.Jakubowski@ipj.gov.p [Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock-Swierk (Poland); Malinowski, K.; Sadowski, M.J.; Zebrowski, J. [Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock-Swierk (Poland); Plyusnin, V.V. [Association Euratom/IST, Instituto de Plasmas e Fusao Nuclear, Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Rabinski, M. [Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock-Swierk (Poland); Fernandes, H.; Silva, C.; Duarte, P. [Association Euratom/IST, Instituto de Plasmas e Fusao Nuclear, Instituto Superior Tecnico, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Jakubowski, M.J. [Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock-Swierk (Poland)

    2010-11-11

    The paper describes experimental studies of electron beams emitted from a plasma torus within the ISTTOK tokamak, which were performed by means of a new four-channel detector of the Cherenkov type. A range of electron energy was estimated. There were also measured hard X-rays, and their correlation with the fast run-away electron beams was investigated experimentally.

  13. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    due to metal catalysis and wet etching. Using the blackened SiGe/Si, MSM photodiodes were fabricated and tested. The lowering of reflection using a...MSM- Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred...Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6176 September 2012 MSM- Metal

  14. Radiation Hard 3D Diamond Sensors for Vertex Detectors at HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00336619; Quadt, Arnulf; Grosse-Knetter, Jörn; Weingarten, Jens

    Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

  15. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  16. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    Energy Technology Data Exchange (ETDEWEB)

    Laminack, William [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Gole, James, E-mail: James.Gole@physics.gatech.edu [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Department of Mechanical Engineering, Georgia Tech, Atlanta, GA 30332 (United States)

    2015-12-30

    Graphical abstract: Visual representation of the PS interface interacting with mixed gas configurations. The red dots correspond to nanostructured metal oxides. Each combination of distinct molecules are labeled below the pores, which are oversized in the figure. - Highlights: • First study of mixed gas analytes interacting with a micro-porous silicon substrate. • Responses are represented by a newly developed response absorption isotherm. • This isotherm is modeled on the basis of the Fermi distribution function. • The developing IHSAB concept explains multi-gas analyte–analyte interactions. - Abstract: A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte–interface, and analyte–analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  17. Shape analysis of current pulses delivered by semiconductor detectors: A new tool for fragmentation studies of high velocity atomic clusters and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Chabot, M. E-mail: chabot@ipno.in2p3.fr; Della Negra, S.; Lavergne, L.; Martinet, G.; Wohrer-Beroff, K. E-mail: wohrer@gps.jussieu.fr; Sellem, R.; Daniel, R.; Le Bris, J.; Lalu, G.; Gardes, D.; Scarpaci, J.A.; Desesquelle, P.; Lima, V

    2002-11-01

    Shape analyses of current pulses delivered by semiconductor detectors under impact of high velocity atomic clusters have been performed for the first time. We show in this paper that the shape of the current pulse depends sensitively on the cluster size. When the cluster is fragmented, the obtained signal is found to result from the sum of signals associated with individual fragment impacts so that recognition of the fragmentation pathway is made possible in an unambiguous way. Application to the extraction of the 29 fragmentation channels of neutral C{sub 9} clusters is presented.

  18. Shape analysis of current pulses delivered by semiconductor detectors: A new tool for fragmentation studies of high velocity atomic clusters and molecules

    CERN Document Server

    Chabot, M; Lavergne, L; Martinet, G; Wohrer-Beroff, K; Sellem, R; Daniel, R; Le Bris, J; Lalu, G; Gardes, D; Scarpaci, J A; Désesquelles, P; Lima, V

    2002-01-01

    Shape analyses of current pulses delivered by semiconductor detectors under impact of high velocity atomic clusters have been performed for the first time. We show in this paper that the shape of the current pulse depends sensitively on the cluster size. When the cluster is fragmented, the obtained signal is found to result from the sum of signals associated with individual fragment impacts so that recognition of the fragmentation pathway is made possible in an unambiguous way. Application to the extraction of the 29 fragmentation channels of neutral C sub 9 clusters is presented.

  19. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors

    OpenAIRE

    Khosroabadi, Akram A.; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A.

    2015-01-01

    We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) st...

  20. New room temperature high resolution solid-state detector (CdZnTe) for hard x rays and gamma rays

    Science.gov (United States)

    Stewart, Amyelizabeth C.; Desai, Upendra D.

    1993-01-01

    The new CdZnTe high 'Z' material represents a significant improvement in detectors for high energy photons. With the thicknesses available, photons up to 100 keV can be efficiently detected. This material has a wide band gap of 1.5 - 2.2 eV which allows it to operate at room temperature while providing high spectral resolution. Results of resolution evaluations are presented. This detector can be used for high resolution spectral measurements of photons in x-ray and gamma-ray astronomy, offering a significant reduction in the weight, power, and volume of the detector system compared to more conventional detector types such as scintillation counters. In addition, the detector will have the simplicity and reliability of solid-state construction. The CdZnTe detector, as a new development, has not yet been evaluated in space. The Get Away Special program can provide this opportunity.

  1. Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

    Science.gov (United States)

    Astromskas, Vytautas

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

  2. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  3. Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Caue de Mello

    2016-11-01

    This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)

  4. EFFECTIVENESS OF ELECTROSTATIC SHIELDING AND ELECTRONIC SUBTRACTION TO CORRECT FOR THE HOLE TRAPPING IN CDZNTE SEMICONDUCTOR DETECTORS.

    Energy Technology Data Exchange (ETDEWEB)

    BOLOTNIKOV,A.E.; CAMARDA, G.S.; HOSSAIN, A.; CUI, Y.; JAMES, R.B.

    2007-08-26

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  5. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  6. Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors

    Science.gov (United States)

    Dulloo, A. R.; Ruddy, F. H.; Seidel, J. G.; Davison, C.; Flinchbaugh, T.; Daubenspeck, T.

    1999-06-01

    The ability of a silicon carbide radiation detector to measure neutron and gamma radiation levels in a TRIGA reactor's mixed neutron/gamma field was demonstrated. Linear responses to epicadmium neutron fluence rate (up to 3/spl times/10/sup 7/ cm/sup -2/ s/sup -1/) and to gamma dose rate (0.6-234 krad-Si h/sup -1/) were obtained with the detector. Axial profiles of the reactor core's neutron and gamma-ray radiation levels were successfully generated through sequential measurements along the length of the core. The SiC detector shows a high level of precision for both neutrons and gamma rays in high-intensity radiation environments-1.9% for neutrons and better than 0.6% for gamma rays. These results indicate that SiC detectors are well suited for applications such as spent fuel monitoring where measurements in mixed neutron/gamma fields are desired.

  7. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Czech Academy of Sciences Publication Activity Database

    Zajíček, J.; Burian, M.; Soukup, P.; Novák, Vladimír; Macko, M.; Jakůbek, J.

    2017-01-01

    Roč. 12, January (2017), č. článku P01015. ISSN 1748-0221 Institutional support: RVO:68378297 Keywords : Gamma camera * SPECT * PET PET/CT * coronary CT angiography (CTA) * Gamma detectors (scintillators, CZT, HPG, HgI etc) * multi-modality systems * pixelated detectors and associated VLSI electronics Subject RIV: JB - Sensors, Measurment, Regulation Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01015

  8. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  9. Developing fine-pixel CdTe detectors for the next generation of high-resolution hard x-ray telescopes

    Science.gov (United States)

    Christe, Steven

    Over the past decade, the NASA Marshall Space Flight Center (MSFC) has been improving the angular resolution of hard X-ray (HXR; 20 "70 keV) optics to the point that we now routinely manufacture optics modules with an angular resolution of 20 arcsec Half Power Diameter (HDP), almost three times the performance of NuSTAR optics (Ramsey et al. 2013; Gubarev et al. 2013a; Atkins et al. 2013). New techniques are currently being developed to provide even higher angular resolution. High angular resolution HXR optics require detectors with a large number of fine pixels in order to adequately sample the telescope point spread function (PSF) over the entire field of view. Excessively over-sampling the PSF will increase readout noise and require more processing with no appreciable increase in image quality. An appropriate level of over-sampling is to have 3 pixels within the HPD. For the HERO mirrors, where the HPD is 26 arcsec over a 6-m focal length converts to 750 μm, the optimum pixel size is around 250 μm. At a 10-m focal length these detectors can support a 16 arcsec HPD. Of course, the detectors must also have high efficiency in the HXR region, good energy resolution, low background, low power requirements, and low sensitivity to radiation damage (Ramsey 2001). The ability to handle high counting rates is also desirable for efficient calibration. A collaboration between Goddard Space Flight Center (GSFC), MSFC, and Rutherford Appleton Laboratory (RAL) in the UK is developing precisely such detectors under an ongoing, funded APRA program (FY2015 to FY2017). The detectors use the RALdeveloped Application Specific Integrated Circuit (ASIC) dubbed HEXITEC, for High Energy X-Ray Imaging Technology. These HEXITEC ASICs can be bonded to 1- or 2- mm-thick Cadmium Telluride (CdTe) or Cadmium-Zinc-Telluride (CZT) to create a fine (250 μm pitch) HXR detector (Jones et al. 2009; Seller et al. 2011). The objectives of this funded effort are to develop and test a HEXITEC

  10. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  11. RD50 recent results: Development of radiation hard sensors for SLHC

    CERN Document Server

    Macchiolo, Anna

    2009-01-01

    The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector designs (Device Engineering) as 3D sensors, thin sensors and n-in-p sensors. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) identification of defects responsible for long term annealing, (ii) charge collection efficiency of irradiated planar devices, in particular n-in-p microstrip detectors and epitaxial diodes, (iii) charge collection efficiency of double-type column 3D detectors, (iv) comparison of the performances of FZ and MCZ structures under mixed irradiation.

  12. Radiation hardness of some semiconductor devices produced in Poland to fast neutrons. Pt. 1. Diodes and transistors; Wytrzymalosc radiacyjna wybranych przyrzadow polprzewodnikowych produkcji krajowej na dzialanie neutronow predkich. Cz.1. Diody i tranzystory

    Energy Technology Data Exchange (ETDEWEB)

    Bouzyk, J.; Augustyniak, E. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland); Hammer, W. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    1993-06-01

    The paper presents the results of hardness studies of semiconductor devices produced in Poland. Representative measured parameters of 9 electronic components irradiated with fission. D-Be and D-T neutrons with fluencies in the range of 10{sup 11} - 10{sup 14} n/cm{sup 2} are given. The results are discussed and lead to the general conclusion that the operation of the semiconductor devices is seriously affected by neutrons with fluences of the order of 10{sup 13} n/cm{sup 2}, some components fail completely at 10{sup 14} n/cm{sup 2}. The radiation damage models of diodes and transistors have been used to calculate the damage coefficients. Ratios of coefficients for the neutrons of 14.7 MeV and fission ones calculated for the transistors and diode are 1.8 and 2.3 respectively. (author). 9 refs, 3 figs, 2 tabs.

  13. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  14. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors.

    Science.gov (United States)

    Khosroabadi, Akram A; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A

    2015-08-07

    We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material.

  15. Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors

    Directory of Open Access Journals (Sweden)

    Akram A. Khosroabadi

    2015-08-01

    Full Text Available We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material.

  16. Characterisation of a radiation hard front-end chip for the vertex detector of the LHCb experiment at CERN

    CERN Document Server

    Van Bakel, N; Bulten, H J; Feuerstack-Raible, M; Jans, E; Ketel, T; Klous, S; Löchner, S; Sexauer, E; Smale, N J; Snoek, H; Trunk, U; Van Beuzekom, M G; Verkooijen, H

    2003-01-01

    The Beetle is a 128 channel analog pipelined readout chip which is intended for use in the silicon vertex locator (VELO) of the LHCb experiment at CERN. The Beetle chip is specially designed to withstand high radiation doses. Two Beetle1.1 chips bonded to a silicon strip detector have been tested with minimum ionizing particles. The main goal was to measure the signal-to-noise (S/N) ratio of the Beetle1.1 connected to a prototype VELO detector. Furthermore we investigated the general behaviour of the Beetle1.1. In this note we present the chip architecture, the measured (S/N) numbers as well as some characteristics (e.g. risetime, spillover) of the Beetle1.1 chip. Results from a total ionizing dose irradiation test are reported.

  17. Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

    CERN Document Server

    Casse, G L; Hanlon, M

    2000-01-01

    The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un- oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detec...

  18. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment; Dosimetria in vivo com uso de detectores semicondutores e termoluminescentes aplicada ao tratamento de cancer de cabeca e pescoco

    Energy Technology Data Exchange (ETDEWEB)

    Viegas, Claudio Castelo Branco

    2003-03-15

    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  19. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    Energy Technology Data Exchange (ETDEWEB)

    James, Ralph (BNL Nonproliferation and National Security Department)

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  20. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2013-01-01

    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  1. Pixel CdTe semiconductor module to implement a sub-MeV imaging detector for astrophysics

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Pellegrini, G.; Lozano, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2017-03-01

    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of nova and supernova explosions in X and gamma rays, with the use of space missions such as INTEGRAL, XMM-Newton and Swift. We have been also involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes, such as GRI, DUAL and e-ASTROGAM. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs). In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm, with a pixel pitch of 1mm x 1mm. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. An ohmic CdTe pixel detector has been characterised by means of 57Co, 133Ba and 22Na sources. Based on this, its spectroscopic performance and the influence of charge sharing is reported here. The pixel study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the pixel size selection.

  2. Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors

    CERN Document Server

    Zhong He; Whe, D

    2003-01-01

    During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project.

  3. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Hahn, C., E-mail: christoph.hahn@uni-jena.de; Höfer, S.; Kämpfer, T. [Helmholtz Institute Jena, 07743 Jena (Germany); Institute of Optics and Quantum Electronics, University of Jena, 07743 Jena (Germany); Weber, G.; Märtin, R. [Helmholtz Institute Jena, 07743 Jena (Germany); GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Stöhlker, Th. [Helmholtz Institute Jena, 07743 Jena (Germany); Institute of Optics and Quantum Electronics, University of Jena, 07743 Jena (Germany); GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany)

    2016-04-15

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  4. The hard X-ray response of the XIS-CCD for Astro-E: qualification of the X-ray CCD detector

    CERN Document Server

    Nishiuchi, M; Awaki, H; Tsuru, T; Sakano, M; Hamaguchi, K; Murakami, H; Tsunemi, H; Hayashida, K; Kitamoto, S; Miyata, E; Dotani, T; Ozaki, M; Bautz, M; Doty, J; Kissel, S; Foster, R; Ricker, G

    1999-01-01

    We report on the hard X-ray response of the CCD detector for the X-ray imaging spectrometer (XIS), to be launched on the next Japanese X-ray Astronomical Satellite, ASTRO-E, in February 2000. XIS is prepared by an international team, comprised of MIT (USA), ISAS, Osaka University and Kyoto University (JAPAN). We have evaluated the X-ray response of the XIS in its high-energy band (1.5-10 keV). Data from the fluorescent line emission of Al, Cl, Ti, Ni, Fe, Zn, Se were used to construct the response function of the CCD detectors. Details of the response function - including the energy-scale, linearity, energy resolution, quantum efficiency -, are given as a function of incident X-ray energy. We find that the tail component of high-energy photopeaks are produced by events with incomplete charge collection. We also conclude that the size of the charge clouds can be estimated using the shapes of the tail components.

  5. A low-noise 64-channel front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems

    Energy Technology Data Exchange (ETDEWEB)

    Gan, B.; Wei, T.; Gao, W., E-mail: gaowu@nwpu.edu.cn; Liu, H.; Hu, Y.

    2016-04-21

    In this paper, we report on the recent development of a 64-channel low-noise front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems. The readout channel is comprised of a charge sensitive amplifier, a leakage current compensation circuit, a CR-RC shaper, two S–K filters, an inverse proportional amplifier, a peak-detect-and-hold circuit, a discriminator and trigger logic, a time sequence control circuit and a driving buffer. The readout ASIC is implemented in TSMC 0.35 μm mixed-signal CMOS technology, the die size of the prototype chip is 2.7 mm×8.0 mm. The overall gain of the readout channel is 200 mV/fC, the power consumption is less than 8 mW/channel, the linearity error is less than 1%, the inconsistency among the channels is less than 2.86%, and the equivalent noise charge of a typical channel is 66 e{sup −} at zero farad plus 14 e{sup −} per picofarad. By connecting this readout ASIC to an 8×8 pixel CdZnTe detector, we obtained an energy spectrum, the energy resolution of which is 4.5% at the 59.5 keV line of {sup 241}Am source.

  6. Flight performance of an advanced CZT imaging detector in a balloon-borne wide-field hard X-ray telescope—ProtoEXIST1

    Science.gov (United States)

    Hong, J.; Allen, B.; Grindlay, J.; Barthelemy, S.; Baker, R.; Garson, A.; Krawczynski, H.; Apple, J.; Cleveland, W. H.

    2011-10-01

    We successfully carried out the first high-altitude balloon flight of a wide-field hard X-ray coded-aperture telescope ProtoEXIST1, which was launched from the Columbia Scientific Balloon Facility at Ft. Sumner, New Mexico on October 9, 2009. ProtoEXIST1 is the first implementation of an advanced CdZnTe (CZT) imaging detector in our ongoing program to establish the technology required for next generation wide-field hard X-ray telescopes such as the High Energy Telescope (HET) in the Energetic X-ray Imaging Survey Telescope (EXIST). The CZT detector plane in ProtoEXIST1 consists of an 8×8 array of closely tiled 2 cm×2 cm×0.5 cm thick pixellated CZT crystals, each with 8×8 pixels, mounted on a set of readout electronics boards and covering a 256 cm2 active area with 2.5 mm pixels. A tungsten mask, mounted at 90 cm above the detector provides shadowgrams of X-ray sources in the 30-600 keV band for imaging, allowing a fully coded field of view of 9°×9° (and 19°×19° for 50% coding fraction) with an angular resolution of 20‧. In order to reduce the background radiation, the detector is surrounded by semi-graded (Pb/Sn/Cu) passive shields on the four sides all the way to the mask. On the back side, a 26 cm×26 cm×2 cm CsI(Na) active shield provides signals to tag charged particle induced events as well as ≳100keV background photons from below. The flight duration was only about 7.5 h due to strong winds (60 knots) at float altitude (38-39 km). Throughout the flight, the CZT detector performed excellently. The telescope observed Cyg X-1, a bright black hole binary system, for ˜1h at the end of the flight. Despite a few problems with the pointing and aspect systems that caused the telescope to track about 6.4° off the target, the analysis of the Cyg X-1 data revealed an X-ray source at 7.2σ in the 30-100 keV energy band at the expected location from the optical images taken by the onboard daytime star camera. The success of this first flight is very

  7. The Hard X-ray Imager (HXI) for the ASTRO-H Mission

    Science.gov (United States)

    Sato, Goro; Kokubun, Motohide; Nakazawa, Kazuhiro; Enoto, Teruaki; Fukazawa, Yasushi; Harayama, Atsushi; Hayashi, Katsuhiro; Kataoka, Jun; Katsuta, Junichiro; Kawaharada, Madoka; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Makishima, Kazuo; Mizuno, Tsunefumi; Mori, Kunishiro; Nakamori, Takeshi; Noda, Hirofumi; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Saito, Shinya; Sato, Rie; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shinichiro; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Watanabe, Shin; Yamaoka, Kazutaka; Yatsu, Yoichi; Yuasa, Takayuki

    2014-07-01

    The 6th Japanese X-ray satellite, ASTRO-H, is scheduled for launch in 2015. The hard X-ray focusing imaging system will observe astronomical objects with the sensitivity for detecting point sources with a brightness of 1/100,000 times fainter than the Crab nebula at > 10 keV. The Hard X-ray Imager (HXI) is a focal plane detector 12 m below the hard X-ray telescope (HXT) covering the energy range from 5 to 80 keV. The HXI is composed of a stacked Si/CdTe semiconductor detector module and surrounding BGO scintillators. The latter work as active shields for efficient reduction of background events caused by cosmic-ray particles, cosmic X-ray background, and in-orbit radiation activation. In this paper, we describe the detector system, and present current status of flight model development, and performance of HXI using an engineering model of HXI.

  8. Plasmonics-enabled metal-semiconductor-metal photodiodes for high-speed interconnects and polarization sensitive detectors

    Science.gov (United States)

    Panchenko, Evgeniy; Cadusch, Jasper J.; James, Timothy D.; Roberts, Ann

    2017-02-01

    Metal-semiconductor-metal (MSM) photodiodes are commonly used in ultrafast photoelectronic devices. Recently it was shown that localized surface plasmons can sufficiently enhance photodetector capabilities at both infrared and visible wavelengths. Such structures are of great interest since they can be used for fast, broadband detection. By utilizing the properties of plasmonic structures it is possible to design photodetectors that are sensitive to the polarization state of the incident wave. The direct electrical readout of the polarization state of an incident optical beam has many important applications, especially in telecommunications, bio-imaging and photonic computing. Furthermore, the fact that surface plasmon polaritons can circumvent the diffraction limit, opens up significant opportunities to use them to guide signals between logic gates in modern integrated circuits where small dimensions are highly desirable. Here we demonstrate two MSM photodetectors integrated with aluminum nanoantennas capable of distinguishing orthogonal states of either linearly or circularly polarized light with no additional filters. The localized plasmon resonances of the antennas lead to selective screening of the underlying silicon from light with a particular polarization state. The non-null response of the devices to each of the basis states expands the potential utility of the photodetectors while improving precision. We also demonstrate a design of waveguide-coupled MSM photodetector suitable for planar detection of surface plasmons.

  9. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  10. Emission detectors

    CERN Document Server

    Bolozdynya, Alexander I

    2010-01-01

    After decades of research and development, emission detectors have recently become the most successful instrumentation used in modern fundamental experiments searching for cold dark matter, and are also considered for neutrino coherent scattering and magnetic momentum neutrino measurement. This book is the first monograph exclusively dedicated to emission detectors. Properties of two-phase working media based on noble gases, saturated hydrocarbon, ion crystals and semiconductors are reviewed.

  11. The application of a semiconductor detector in the estimation of the effective dose in radiographic examination of the extremities

    CERN Document Server

    Eyden, A C

    2001-01-01

    15 energy dependent calibration coefficients formulated from the data gathered at the NRPB. The dose in air was then multiplied by the appropriate mass energy absorption coefficient for each particular tissue type and following a scatter correction factor the organ dose was calculated. ICRP weighting factors (1990, P68) were then applied to the organ and tissue doses to calculate the effective dose. The effective dose value was found to be 0.42 mu Sv for a male and 0.41 mu Sv for a female. The aim of this project was to measure the effective dose from radiographic examination of the ankle. Previous work investigating effective dose values resultant from extremity examinations has made estimations using computer simulations of scattering processes. To measure the effective dose, certain key pieces of apparatus were required. The dose levels within the body were in the order of 10 sup - sup 9 Gy and therefore an extremely sensitive x-ray detector was required. To estimate the effective dose, a specific set of o...

  12. Measurement of gamma-ray intensities of sup 2 sup 3 sup 1 Th using semiconductor detectors

    CERN Document Server

    Chatani, H

    1999-01-01

    Nuclide sup 2 sup 3 sup 1 Th was yielded by the sup 2 sup 3 sup 2 Th(n, 2n) reaction with neutron irradiation in the Kyoto University Reactor (KUR). Moreover, the thorium was purified chemically. Gamma-ray spectra of thorium have been measured using low-energy photon spectrometers and a high-purity germanium detector. Relative gamma-ray intensities ranging from 25 to 352 keV in the decay of sup 2 sup 3 sup 1 Th have been determined with satisfactory accuracy. The results are in very good agreement with those of earlier studies. We observe two new gamma-rays at 77.69 and 177.66 keV, whose intensities are found to be (0.063+-0.010)% and (0.00095+-0.00020)%, respectively, relative to that of 84.21 keV taken as 100%. Absolute intensity of 84.21 keV gamma-ray which is the most prominent one from the decay of sup 2 sup 3 sup 1 Th and that of 185.739 keV following the decay of sup 2 sup 3 sup 5 U are also determined from the secular equilibrium for sup 2 sup 3 sup 5 U- sup 2 sup 3 sup 1 Th. The results obtained in t...

  13. Research on an FM/cw ladar system using a 64 × 64 InGaAs metal-semiconductor-metal self-mixing focal plane array of detectors.

    Science.gov (United States)

    Gao, Jian; Sun, Jianfeng; Cong, Mingyu

    2017-04-01

    Frequency-modulated/continuous-wave imaging systems are a focal plane array (FPA) ladar architecture that is applicable to smart munitions, reconnaissance, face recognition, robotic navigation, etc. In this paper, we report a 64×64 pixel FPA ladar system we built using a 1550 nm amplified laser diode transmitter and an InAlAs/InGaAs metal-semiconductor-metal self-mixing detector array and the test results attained over the years it was constructed. Finally, we gained 4D imaging (3D range + 1D intensity) of the target with the range of 220 m.

  14. Semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Tuchkevich, V.M.; Frenkel, V.Y.

    1986-01-01

    This text is a collection of papers devoted mainly to the results of the research work in the field of semiconductors. Topics include photovoltaic solar energy conversion, interacting excitons in germanium and silicon, chalcogenide vitreous semiconductors, optical cooling of the nuclear spin system in a semiconductor, photon drag of electrons in semiconductors, dielectric losses in crystals, light scattering from heavily doped semiconductors, and the capacity of an abrupt asymmetric p-n junction.

  15. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  16. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  17. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  18. Development of fast data processing electronics for a stacked x-ray detector system with application as a polarimeter

    Science.gov (United States)

    Maier, Daniel; Dick, Jürgen; Distratis, Giuseppe; Kendziorra, Eckhard; Santangelo, Andrea; Schanz, Thomas; Tenzer, Christoph; Warth, Gabriele

    2012-09-01

    We have assembled a stacked setup consisting of a soft and hard X-ray detector with cooling capability and control-, readout-, and data processing electronics at the Institut für Astronomie und Astrophysik Tübingen (IAAT). The detector system is a 64 ×64 DePFET-Matrix in front of a CdTe-Caliste module. The detectors were developed at the Max-Planck Institute Semiconductor Laboratory (HLL) in Neuperlach and the Commissariat a l'Energie Atomique (CEA) in Saclay, respectively. In this combined structure the DePFET detector works as Low Energy Detector (LED) while the Caliste module (HED) only detects the high energy photons that have passed through the LED. In this work we present the current status of the setup. Furthermore, an intended application of the detector system as a polarimeter is described.

  19. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  20. Gamma ray detector modules

    Science.gov (United States)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  1. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  2. In-vivo x-ray micro-imaging and micro-CT with the Medipix2 semiconductor detector at UniAndes

    Science.gov (United States)

    Caicedo, I.; Avila, C.; Gomez, B.; Bula, C.; Roa, C.; Sanabria, J.

    2012-02-01

    This poster contains the procedure to obtain micro-CTs and to image moving samples using the Medipix2 detector, with its corresponding results. The high granularity of the detector makes it suitable for micro-CT. We used commercial software (Octopus) to do the 3D reconstruction of the samples in the first place, and we worked on modifying free reconstruction software afterwards. Medipix has a very fast response ( ~ hundreds of nanoseconds) and high sensibility. These features allow obtaining nearly in-vivo high resolution (55m * 55m) images. We used an exposure time of 0.1 s for each frame, and the resulting images were animated. The High Energy Physics Group at UniAndes is a member of the Medipix3 collaboration. Its research activities are focused on developing set-ups for biomedical applications and particle tracking using the Medipix2 and Timepix detectors, and assessing the feasibility of the Medipix3 detector for future applications.

  3. Development of a pixelated CdTe detector module for a hard-x and gamma-ray imaging spectrometer application

    Science.gov (United States)

    Galvèz, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-07-01

    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of novae and supernovae in X and gamma-rays, with the use of space missions. We have also been involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae and Classical Novae. In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm with a pixel pitch of 1mm x 1mm. Two kinds of CdTe pixel detectors with different contacts have been tested: ohmic and Schottky. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout VATAGP7.1 ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. The study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the detector design. We will report on the spectroscopy characterisation of the CdTe detector module as well as the study of charge sharing.

  4. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector; Desenvolvimento do cristal semicondutor de brometo de talio para aplicacoes como detector de radiacao e fotodetector

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de

    2006-07-01

    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by {sup 241}Am (59 keV), {sup 133}Ba (80 e 355 keV), {sup 57}Co (122 keV), {sup 22}Na (511 keV) and {sup 137} Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  5. The Cryogenic AntiCoincidence detector for ATHENA X-IFU: a scientific assessment of the observational capabilities in the hard X-ray band

    Science.gov (United States)

    D'Andrea, M.; Lotti, S.; Macculi, C.; Piro, L.; Argan, A.; Gatti, F.

    2017-12-01

    ATHENA is a large X-ray observatory, planned to be launched by ESA in 2028 towards an L2 orbit. One of the two instruments of the payload is the X-IFU: a cryogenic spectrometer based on a large array of TES microcalorimeters, able to perform integral field spectrography in the 0.2-12 keV band (2.5 eV FWHM at 6 keV). The X-IFU sensitivity is highly degraded by the particle background expected in the L2 orbit, which is induced by primary protons of both galactic and solar origin, and mostly by secondary electrons. To reduce the particle background level and enable the mission science goals, the instrument incorporates a Cryogenic AntiCoincidence detector (CryoAC). It is a 4 pixel TES based detector, placed 10 keV). The aim of the study has been to understand if the present detector design can be improved in order to enlarge the X-IFU scientific capability on an energy band wider than the TES array. This is beyond the CryoAC baseline, being this instrument aimed to operate as anticoincidence particle detector and not conceived to perform X-ray observations.

  6. Performance of a radiation hard 128 channel analogue front-end chip for the readout of a silicon-based hybrid photon detector

    CERN Document Server

    Lacasta, C; Dulinski, W; Chesi, Enrico Guido; Joram, C; Kaplon, J; Lozano-Bahilo, J; Séguinot, Jacques; Szczygiel, R; Weilhammer, Peter; Ypsilantis, Thomas

    2003-01-01

    The performance is described of a front-end chip, the SCT128A-LC chip, originally developed for the readout of a silicon based Hybrid Photon Detector (HPD), which is part of an RICH detector to be run in an LHC experimental environment. The relatively low signal charge from single photoelectrons, impinging on the silicon pad sensor, put very stringent requirements on the noise performance of the front-end chip. An absolute noise calibration using X-ray sources and a **2**4**1Am gamma source was performed. It is demonstrated that sufficiently good signal over noise ratio can be obtained to use this chip for the read-out of an HPD in LHC experiments.

  7. Radiological and Nuclear Detection Material Science: Novel Rare-Earth Semiconductors for Solid-State Neutron Detectors and Thin High-k Dielectrics

    Science.gov (United States)

    2017-11-01

    advanced materials, furthers our basic collective understanding in solid state neutron detector materials. The new materials directions have great promise...Lanthanum Amido Precursors”, Materials Chemistry and Physics 104 (2007) 220-224 10. Ihor Ketsman, Ya. B. Losovyj, A. Sokolov, Jinke Tang, Zhenjun Wang, M...and P.A. Dowben, “Surface charging of n-type Gd2O3 and HfO2 thin films”, Rare-Earth Doping of Advanced Materials for Photonic Applications, edited by

  8. Position-sensitive radiation detector..

    NARCIS (Netherlands)

    Van Eijk, C.W.E.; Schooneveld, E.

    1990-01-01

    Abstract of EP 0383389 (A1) Position-sensitive radiation detector provided with a semiconductor structure comprising a wafer of semiconductor material of a first conductivity type having two principal-surfaces situated at relatively short distances from each other, the dimensions of which are

  9. The Upgrade of the ATLAS Inner Detector

    CERN Document Server

    Ferrere, D; The ATLAS collaboration

    2012-01-01

    With the Large Hadron Collider (LHC) successfully collecting data at 7 TeV and even at 8 TeV since April 2012, plans are actively advancing for a series of upgrades in phase with the three long shutdown periods leading to detector improvement. The ATLAS collaboration will upgrade at the next shutdown in 2013-2014 its semiconductor pixel tracking detector with a new Insertable BLayer (IBL) between the existing innermost pixel layer and the vacuum pipe of the LHC. The extreme operating conditions at this location led considering the development of new radiation hard pixel sensor technologies and a new front-end readout chip. The IBL community is currently working for producing modules with silicon planar and 3D technology towards the loading on 14 local stave structures as well as the integration around the beam pipe and in the ATLAS detector. The High-Luminosity LHC (HL-LHC) will eventually increase to about five times the LHC design-luminosity some 10-years from now requiring a complete Inner Detector replace...

  10. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  11. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  12. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  13. 3D double sided detector fabrication at IMB-CNM

    Energy Technology Data Exchange (ETDEWEB)

    Pellegrini, G., E-mail: giulio.pellegrini@imb-cnm.csic.es [Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Barcelona (Spain); Balbuena, J.P.; Bassignana, D.; Cabruja, E.; Fleta, C.; Guardiola, C.; Lozano, M.; Quirion, D.; Ullán, M. [Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Barcelona (Spain)

    2013-01-21

    The Large Hadron Collider (LHC) recorded its first collisions during the last months of 2009. By 2020 a two-stage upgrade of the accelerator complex, the High Luminosity LHC (HL-LHC), will increase the instantaneous luminosities up to a factor of ten compared to the current design. The particle fluxes at ATLAS will increment substantially with special impact on the inner tracking detector which will be subjected to large occupancies and radiation damage. In order to cope with the higher instantaneous luminosities ATLAS will upgrade its current Inner Detector (ID) in two phases, first by introducing a new pixel layer (IBL) mounted directly on the beam pipe, and later by completely replacing the current ID with several layers of semiconductor detectors (pixels and strips). The upgrades to the ATLAS ID require the development of new silicon technologies, since the current planar pixel sensors are not suitable for the expected radiation doses at small radii. For these inner detector layers, the most promising technology is the so-called 3D sensor, while improved planar sensors are considered for the external layers. Silicon detectors with cylindrical electrodes offer advantages over standard planar sensors mainly because they are more radiation hard. 3D detectors with the double sided geometry have been fabricated at IMB-CNM clean room facilities. The layouts fits the new pixelated readout chip FE-I4 developed by the ATLAS collaboration.

  14. Noble Gas Detectors

    CERN Document Server

    Aprile, Elena; Bolozdynya, Alexander I; Doke, Tadayoshi

    2006-01-01

    This book discusses the physical properties of noble fluids, operational principles of detectors based on these media, and the best technical solutions to the design of these detectors. Essential attention is given to detector technology: purification methods and monitoring of purity, information readout methods, electronics, detection of hard ultra-violet light emission, selection of materials, cryogenics etc.The book is mostly addressed to physicists and graduate students involved in the preparation of fundamental next generation experiments, nuclear engineers developing instrumentation

  15. Refined Synthesis and Crystal Growth of Pb{sub 2}P{sub 2}Se{sub 6} for Hard Radiation Detectors.

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng L.; Kostina, Svetlana S.; Meng, Fang; Kontsevoi, Oleg Y.; Liu, Zhifu; Chen, Pice; Peters, John A.; Hanson, Micah; He, Yihui; Chung, Duck Young; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G.

    2016-09-01

    The refined synthesis and optimized crystal growth of high quality Pb2P2Se6 single crystals are reported. Improved experimental procedures were implemented to reduce the oxygen contamination and improve the stoichiometry of the single crystal samples. The impact of oxygen contamination and the nature of the stoichiometry deviation in the Pb2P2Se6 system were studied by first-principles density functional theory (DFT) electronic structure calculations as well as experimental methods. The DFT calculations indicated that the presence of interstitial oxygen atoms (O-int) leads to the formation of a deep level located near the middle of the gap, as well as a shallow acceptor level near the valence band maximum. In addition, total energy calculations of the heat of formation of Pb2P2Se6 suggest that the region of thermodynamic stability is sufficiently wide. By refining the preparative procedures, high quality Pb2P2Se6 single crystal samples were reproducibly obtained. These Pb2P2Se6 single crystals exhibited excellent optical transparency, electrical resistivity in the range of 10(11) Omega.cm, and a significant increase in photoconductivity. Infrared photoluminescence of the Pb2P2Se6 single crystals was observed over the temperature range of 15-75 K. Detectors fabricated from boules yielded a clear spectroscopic response to both Ag K alpha X-ray and Co-57 gamma-ray radiation. The electron and hole mobility lifetime product (mu tau) of the current Pb2P2Se6 detectors were estimated to be 3.1 x 10(-4) and 4.8 X 10(-5) cm(2)/V, respectively.

  16. GaTe semiconductor for radiation detection

    Science.gov (United States)

    Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  17. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  18. Diamond based detectors for high temperature, high radiation environments

    Science.gov (United States)

    Metcalfe, A.; Fern, G. R.; Hobson, P. R.; Smith, D. R.; Lefeuvre, G.; Saenger, R.

    2017-01-01

    Single crystal CVD diamond has many desirable properties as a radiation detector; exceptional radiation hardness and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry and transmission mode applications), wide bandgap (high temperature operation with low noise and solar blind), an intrinsic pathway to fast neutron detection through the 12C(n,α)9Be reaction. This combination of radiation hardness, temperature tolerance and ability to detect mixed radiation types with a single sensor makes diamond particularly attractive as a detector material for harsh environments such as nuclear power station monitoring (fission and fusion) and oil well logging. Effective exploitation of these properties requires the development of a metallisation scheme to give contacts that remain stable over extended periods at elevated temperatures (up to 250°C in this instance). Due to the cost of the primary detector material, computational modelling is essential to best utilise the available processing methods for optimising sensor response through geometry and conversion media configurations and to fully interpret experimental data. Monte Carlo simulations of our diamond based sensor have been developed, using MCNP6 and FLUKA2011, assessing the sensor performance in terms of spectral response and overall efficiency as a function of the detector and converter geometry. Sensors with varying metallisation schemes for high temperature operation have been fabricated at Brunel University London and by Micron Semiconductor Limited. These sensors have been tested under a varied set of conditions including irradiation with fast neutrons and alpha particles at high temperatures. The presented study indicates that viable metallisation schemes for high temperature contacts have been successfully developed and the modelling results, supported by preliminary experimental data from partners, indicate that the simulations provide a reasonable representation of

  19. Photovoltaic radiation detector element

    Science.gov (United States)

    Agouridis, D.C.

    1980-12-17

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips.

  20. Comparative study of natural and synthetic type-IIa diamond radiation detectors

    Science.gov (United States)

    Zaletaev, Nicolas B.; Alekseyev, Andrey G.; Amosov, Vladimir N.; Feigelson, Boris N.

    2000-11-01

    Diamond has the highest radiation-damage level among radiation-detector semiconductor materials. Besides, low carbon nucleus charge, Z equals 6, provides tissue equivalence of diamond detectors. However, essential restrictions are imposed on production of natural-diamond detectors by extremely low final yield of selection procedure and corresponding expensiveness of high-quality type IIa natural diamonds. The solution of this problem could be found through the development of single-crystal synthetic-diamond detectors. Basic radiation-response properties of high-pressure high- temperature (HPHT) single-crystal synthetic-diamond (SD) detectors and natural-diamond (ND) detectors made of extremely low nitrogen content (type IIa) material were comparatively studied under hard X-ray, UV, and alpha-particle irradiation. Four orders of magnitude higher steady-state responsivity to radiation has been observed for SD detectors. The gain evaluated under UV irradiation exceeded 6000 (the corresponding value of responsivity was above 1000 A/W). The study of alpha-particle-induced electromotive force (EMF) polarity has revealed the opposite type of surface bending of energy bands in synthetic and natural diamonds. The difference in detector performance could be explained in terms of presented model of charge carrier injection and transport in diamond.

  1. Radiation detectors laboratory; Laboratorio de detectores de radiacion

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    1997-07-01

    The Radiation detectors laboratory was established with the assistance of the International Atomic Energy Agency which gave this the responsibility to provide its services at National and regional level for Latin America and it is located at the ININ. The more expensive and delicate radiation detectors are those made of semiconductor, so it has been put emphasis in the use and repairing of these detectors type. The supplied services by this laboratory are: selection consultant, detectors installation and handling and associated systems. Installation training, preventive and corrective maintenance of detectors and detection systems calibration. (Author)

  2. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  3. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  4. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  5. You can't measure what you can't see - detectors for microscopies

    Science.gov (United States)

    Denes, Peter

    For centuries, the human eye has been the imaging detector of choice thanks to its high sensitivity, wide dynamic range, and direct connection to a built-in data recording and analysis system. The eye, however, is limited to visible light, which excludes microscopies with electrons and X-rays, and the built-in recording system stores archival information at very low rates. The former limitation has been overcome by ``indirect'' detectors, which convert probe particles to visible light, and the latter by a variety of recording techniques, from photographic film to semiconductor-based imagers. Semiconductor imagers have been used for decades as ``direct'' detectors in particle physics, and almost as long for hard X-rays. For soft X-ray microscopy, the challenge has been the small signal levels - plus getting the X-rays into the detector itself, given how quickly they are absorbed in inert layers. For electron microscopy, the challenge has been reconciling detector spatial resolution and pixel count with the large multiple scattering of electrons with energies used for microscopy. Further, a high recording rate (``movies'' rather than ``snapshots'') enables time-resolved studies, time-dependent corrections, shot-by-shot experiments and scanning techniques - at the expense of creating large data volumes. This talk will discuss solutions to these challenges, as well as an outlook towards future developments.

  6. Detector Control System for the ATLAS Forward Proton detector

    CERN Document Server

    Czekierda, Sabina; The ATLAS collaboration

    2017-01-01

    The ATLAS Forward Proton (AFP) is a forward detector using a Roman Pot technique, recently installed in the LHC tunnel. It is aiming at registering protons that were diffractively or electromagnetically scattered in soft and hard processes. Infrastructure of the detector consists of hardware placed both in the tunnel and in the control room USA15 (about 330 meters from the Roman Pots). AFP detector, like the other detectors of the ATLAS experiment, uses the Detector Control System (DCS) to supervise the detector and to ensure its safe and coherent operation, since the incorrect detector performance may influence the physics results. The DCS continuously monitors the detector parameters, subset of which is stored in data bases. Crucial parameters are guarded by alarm system. A detector representation as a hierarchical tree-like structure of well-defined subsystems built with the use of the Finite State Machine (FSM) toolkit allows for overall detector operation and visualization. Every node in the hierarchy is...

  7. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  8. Work on the ATLAS semiconductor tracker barrel

    CERN Multimedia

    Maximilien Brice

    2005-01-01

    Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.

  9. Use of semiconductor detector c-Si microstrip type in obtaining the digital radiographic imaging of phantoms and biological samples of mammary glands; Empleo de detector semiconductor de c-Si del tipo microbandas en la obtencion de imagenes radiograficas digitales de maniquies y muestras biologicas de mamas

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, A.; Cabal, A.; Pinera, I.; Abreu, Y.; Cruz, C. M. [Centro de Estudios Avanzados y Desarrollo Nuclear, C. Habana, Cuba (Cuba); Montano, L. M.; Diaz, C. C.; Fontaine, M. [IPN, Centro de Investigaciones y Estudios Avanzados, Mexico D. F. (Mexico); Ortiz, C. M. [ISSSTE, Hospital General Tacuba, Clinica de Mama y Gineco-oncologia, Mexico D. F. (Mexico); Padilla, F. [Instituto Superior de Tecnologias y Ciencias Aplicadas, C. Habana, Cuba (Cuba); De la Mora, R. [Centro de Control Estatal de Equipos Medicos, C. Habana, Cuba (Cuba)], e-mail: aleyva@ceaden.edu.cu

    2009-07-01

    The present work synthesizes the experimental results obtained in the characterization of 64 micro strips crystalline silicon detector designed for experiments in high energies physics, with the objective of studying its possible application in advanced medical radiography, specifically in digital mammography and angiography. The research includes the acquisition of two-dimensional radiography of a mammography phantom using the scanning method, and its comparison with similar images simulated mathematically for different X rays sources. The paper also shows the experimental radiography of two biological samples taken from biopsies of mammas, where it is possible to identify the presence of possible pathological lesions. The results reached in this work point positively toward the effective possibility of satisfactorily introducing those advanced detectors in medical digital imaging applications. (Author)

  10. High-resolution CdTe detectors with application to various fields (Conference Presentation)

    Science.gov (United States)

    Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

    2016-10-01

    High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

  11. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures

    CERN Document Server

    Shah, Jagdeep

    1996-01-01

    Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Ultrafast spectroscopy of semiconductors is currently one of the most exciting areas of research in condensed-matter physics Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors This monograph presents some of the most striking recent advances in the field of ultrafast spectroscopy of semiconductors and their nanostructures After a brief overview of the basic concepts and of the recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy, it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses

  12. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Sfyrla, Anna [Univ. of Geneva (Switzerland)

    2008-03-10

    In the first part of this work, we present a search for WW and WZ production in charged lepton, neutrino plus jets final states produced in p$\\bar{p}$ collisions with √s = 1.96 TeV at the Fermilab Tevatron, using 1.2 fb-1 of data accumulated with the CDF II detector. This channel is yet to be observed in hadron colliders due to the large singleWplus jets background. However, this decay mode has a much larger branching fraction than the cleaner fully leptonic mode making it more sensitive to anomalous triple gauge couplings that manifest themselves at higher transverse W momentum. Because the final state is topologically similar to associated production of a Higgs boson with a W, the techniques developed in this analysis are also applicable in that search. An Artificial Neural Network has been used for the event selection optimization. The theoretical prediction for the cross section is σWW/WZtheory x Br(W → ℓv; W/Z → jj) = 2.09 ± 0.14 pb. They measured NSignal = 410 ± 212(stat) ± 102(sys) signal events that correspond to a cross section σWW/WZ x Br(W → ℓv; W/Z → jj) = 1.47 ± 0.77(stat) ± 0.38(sys) pb. The 95% CL upper limit to the cross section is estimated to be σ x Br(W → ℓv; W/Z → jj) < 2.88 pb. The second part of the present work is technical and concerns the ATLAS SemiConductor Tracker (SCT) assembly phase. Although technical, the work in the SCT assembly phase is of prime importance for the good performance of the detector during data taking. The production at the University of Geneva of approximately one third of the silicon microstrip end-cap modules is presented. This collaborative effort of the university of Geneva group that lasted two years, resulted in 655 produced modules, 97% of which were good modules, constructed within the mechanical and electrical specifications and delivered in the SCT collaboration for assembly on the end-cap disks. The SCT end-caps and barrels

  13. Particlc detectors. Foundations and applications; Teilchendetektoren. Grundlagen und Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Kolanoski, Hermann; Wermes, Norbert

    2016-08-01

    The following topics are dealt with: Interaction of particles with matter, motion of charge carriers in electric and magnetic fields, signal generation by moving charges, non-electronic detectors, gas-filled detectors, semiconductor detectors, track reconstruction and momentum measurement, photodetectors, Cherenkov detectors, transition-radiation detectors, scintillation detectors, particle identification, calorimeters, detection of cosmic particles, signal processing and noise, trigger and data acquisition systems. (HSI)

  14. Radiation hardening of silicon detectors

    CERN Document Server

    Lemeilleur, F

    1999-01-01

    The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (15 refs).

  15. Characterisation of Silicon Timing Detectors for the RD50 Collaboration

    CERN Document Server

    Immig, David Maximilian

    2017-01-01

    Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.

  16. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  17. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  18. Radiation-hard optoelectronic data readout for the ATLAS SCT

    CERN Document Server

    Troska, Jan K; Gregor, I M; Homer, R James; Jovanovic, P; Mahout, G; Mandic, I; Wastie, R L; Weidberg, A R; White, D J

    2000-01-01

    The ATLAS experiment is currently in the final pre-production design phase to allow timely installation at the CERN Large Hadron Collider in 2005. The sub-systems closest to the interaction point the tracking detectors, will be subject to significant total radiation dose at high flux. Optical data transmission has been chosen for the Pixel and SemiConductor Tracker to both deliver timing and control information to the detector modules and transmit tracking data to the remote counting room. Of considerable concern is the radiation hardness, both transient and total dose, of not just the optoelectronic components but also the driver/receiver electronics. In this paper we report on total dose radiation testing of the VCSEL driver and photodiode receiver ASICs designed using a range of techniques in a nominally radiation-soft process. Both ASICs will be shown to be tolerant to a total gamma dose of 100 kGy and a total neutron fluence (1 MeV equiv.) of 2*10/sup 14/ n/cm/sup 2/, as required for this system. Single-...

  19. First realization of a tracking detector for high energy physics experiments based on Josephson digital readout circuitry

    CERN Document Server

    Pagano, S; Esposito, A P; Mukhanov, O; Rylov, S

    1999-01-01

    We have designed and realized a prototype of a high energy particle microstrip detector with Josephson readout circuits. The key features of this device are: minimum ionizing particle sensitivity, due to the use of semiconductive sensors, fast speed and radiation hardness, due to the use of superconductive circuitry, and current discrimination, which allows the use of several types of semiconductors as detector (Si, GaAs, CVD-diamond) without loss in performances. The Josephson circuitry, made by a combination of RSFQ and latching logic gates, realizes an 8-bit current discriminator and parallel to serial converter and can be directly interfaced to room temperature electronics. This device, which is designed for application as vertex detector for the Compass and LHC-B accelerator experiments, has been tested with small radioactive sources acid will undergo to a test beam at the CERN SPS facility with 24 GeV/c protons. Current results and future perspectives will be reported. (11 refs).

  20. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  1. Standard hardness conversion tables for metals relationship among brinell hardness, vickers hardness, rockwell hardness, superficial hardness, knoop hardness, and scleroscope hardness

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2007-01-01

    1.1 Conversion Table 1 presents data in the Rockwell C hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.2 Conversion Table 2 presents data in the Rockwell B hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.3 Conversion Table 3 presents data on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, and Knoop hardness of nickel and high-nickel alloys (nickel content o...

  2. Neutron and X-ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Carini, Gabriella [SLAC National Accelerator Lab., Menlo Park, CA (United States); Denes, Peter [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Gruener, Sol [Cornell Univ., Ithaca, NY (United States); Lessner, Elianne [Dept. of Energy (DOE), Washington DC (United States). Office of Science Office of Basic Energy Sciences

    2012-08-01

    (and two computing hurdles that result from the corresponding increase in data volume) for the detector community to overcome in order to realize the full potential of BES neutron and X-ray facilities. Resolving these detector impediments will improve scientific productivity both by enabling new types of experiments, which will expand the scientific breadth at the X-ray and neutron facilities, and by potentially reducing the beam time required for a given experiment. These research priorities are summarized in the table below. Note that multiple, simultaneous detector improvements are often required to take full advantage of brighter sources. High-efficiency hard X-ray sensors: The fraction of incident particles that are actually detected defines detector efficiency. Silicon, the most common direct-detection X-ray sensor material, is (for typical sensor thicknesses) 100% efficient at 8 keV, 25%efficient at 20 keV, and only 3% efficient at 50 keV. Other materials are needed for hard X-rays. Replacement for 3He for neutron detectors: 3He has long been the neutron detection medium of choice because of its high cross section over a wide neutron energy range for the reaction 3He + n —> 3H + 1H + 0.764 MeV. 3He stockpiles are rapidly dwindling, and what is available can be had only at prohibitively high prices. Doped scintillators hold promise as ways to capture neutrons and convert them into light, although work is needed on brighter, more efficient scintillator solutions. Neutron detectors also require advances in speed and resolution. Fast-framing X-ray detectors: Today’s brighter X-ray sources make time-resolved studies possible. For example, hybrid X-ray pixel detectors, initially developed for particle physics, are becoming fairly mature X-ray detectors, with considerable development in Europe. To truly enable time-resolved studies, higher frame rates and dynamic range are required, and smaller pixel sizes are desirable. High-speed spectroscopic X-ray detectors

  3. The ATLAS semiconductor tracker

    CERN Document Server

    Mikuz, Marko

    2003-01-01

    The ATLAS Semiconductor Tracker (SCT) is presented. About 16000 silicon micro-strip sensors with a total active surface of over 60 m **2 and with 6.3 million read-out channels are built into 4088 modules arranged into four barrel layers and nine disks covering each of the forward regions up to an eta of 2.5. Challenges are imposed by the hostile radiation environment with particle fluences up to 2 multiplied by 10**1**4 cm**-**2 1 MeV neutron NIEL equivalent and 100 kGy TID, the 25 ns LHC bunch crossing time and the need for a hermetic, lightweight tracker. The solution adopted is carefully designed strip detectors operated at -7 degree C, biased up to 500 V and read out by binary radhard fast BiCMOS electronics. A zero-CTE carbon fibre structure provides mechanical support. 30 kW of power are supplied on aluminiutn/Kapton tapes and cooled by C//3F//8 evaporative cooling. Data and commands are transferred by optical links. Prototypes of detector modules have been built, irradiated to the maximum expected flue...

  4. High throughput combinatorial screening of semiconductor materials

    Science.gov (United States)

    Mao, Samuel S.

    2011-11-01

    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  5. Conceptual design of MCP based particle detector

    Science.gov (United States)

    Barnyakov, A. Yu.; Barnyakov, M. Yu.; Blinov, V. E.; Bobrovnikov, V. S.; Bykov, A. V.; Ivanov, V. Ya.; Katcin, A. A.; Mamoshkina, E. V.; Ovtin, I. V.; Pivovarov, S. G.; Prisekin, V. G.; Pyata, E. E.

    2017-08-01

    A time-of-flight detector based on microchannel plates (MCP) is under development. The main goal of this work is the creation of a radiation hard large area detector providing 10 ps time resolution in strong magnetic field. The conceptual detector design is described in details.

  6. Combining two major ATLAS inner detector components

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    The semiconductor tracker is inserted into the transition radiation tracker for the ATLAS experiment at the LHC. These make up two of the three major components of the inner detector. They will work together to measure the trajectories produced in the proton-proton collisions at the centre of the detector when the LHC is switched on in 2008.

  7. A novel radiation hard pixel design for space applications

    Science.gov (United States)

    Aurora, A. M.; Marochkin, V. V.; Tuuva, T.

    2017-11-01

    We have developed a novel radiation hard photon detector concept based on Modified Internal Gate Field Effect Transistor (MIGFET) wherein a buried Modified Internal Gate (MIG) is implanted underneath a channel of a FET. In between the MIG and the channel of the FET there is depleted semiconductor material forming a potential barrier between charges in the channel and similar type signal charges located in the MIG. The signal charges in the MIG have a measurable effect on the conductance of the channel. In this paper a radiation hard double MIGFET pixel is investigated comprising two MIGFETs. By transferring the signal charges between the two MIGs Non-Destructive Correlated Double Sampling Readout (NDCDSR) is enabled. The radiation hardness of the proposed double MIGFET structure stems from the fact that interface related issues can be considerably mitigated. The reason for this is, first of all, that interface generated dark noise can be completely avoided and secondly, that interface generated 1/f noise can be considerably reduced due to a deep buried channel readout configuration. Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/f noise, well performing NDCDSR operation, and blooming protection due to an inherent vertical anti-blooming structure. In addition, the backside illuminated thick fully depleted pixel design results in low crosstalk due to lack of diffusion and good quantum efficiency from visible to Near Infra-Red (NIR) light. These facts result in excellent Signal-to-Noise Ratio (SNR) and very low crosstalk enabling thus excellent image quality. The simulation demonstrates the charge to current conversion gain for source current read-out to be 1.4 nA/e.

  8. Materials technologies for IR detectors

    Energy Technology Data Exchange (ETDEWEB)

    Besson, J.

    1986-01-01

    This book presents the papers given at a conference which examined crystal growth methods for semiconductor materials used in infrared detectors. Topics considered at the conference included materials research, cadmium tellurides, electrochemistry, mercury tellurides, pressure effects, liquid phase epitaxy, annealing, germanium photoconductor materials, fundamental studies, materials characterization, magnetic fields, and basic properties of infrared materials.

  9. Canberra semiconductor, an industrial partner for physics research

    Energy Technology Data Exchange (ETDEWEB)

    Verplancke, J.; Burger, P.; Schoenmaekers, W. (Canberra Semiconductor NV, Olen (Belgium))

    1990-03-01

    Canberra semiconductor produces germanium and silicon solid state detectors for nuclear radiation. Its business domain covers the production of standard detectors on an industrial basis, for industrial and applied physics applications, as well as the development of special detectors and electronics, tailored to the needs of a particular application, in science and research. There exists an important and beneficial interaction between these two activities. (orig.).

  10. Particle detectors made of high-resistivity Czochralski silicon

    CERN Document Server

    Härkönen, J; Ivanov, A; Li, Z; Luukka, Panja; Pirojenko, A; Riihimaki, I; Tuominen, E; Tuovinen, E; Verbitskaya, E; Virtanen, A

    2005-01-01

    We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Omega cm and 1.9 kOmega cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, gamma-rays, lithium ions and electrons. Cz-Si was found to be more radiation hard than standard Float Zone silicon (Fz-Si) or oxygenated Fz-Si. When irradiated with protons, the full depletion voltage in Cz-Si has not exceeded its initial value of 300 V even after the fluence of 5 multiplied by 10**1**4 cm**-**2 1-MeV eq. n cm **-**2 that equals more than 30 years operation of...

  11. X-Ray and Gamma-Ray Radiation Detector

    DEFF Research Database (Denmark)

    2015-01-01

    Disclosed is a semiconductor radiation detector for detecting X-ray and / or gamma-ray radiation. The detector comprises a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs, at least one cathode, a plurality of detector electrodes arranged with a pitch...

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. The HERMES recoil detector

    Energy Technology Data Exchange (ETDEWEB)

    Airapetian, A. [Giessen Univ. (Germany). Physikalisches Inst.; Michigan Univ., Ann Arbor, MI (United States). Randall Laboratory of Physics; Aschenauer, E.C. [DESY, Zeuthen (Germany); Belostotski, S. [B.P. Konstantinov Petersburg Nuclear Physics Insitute, Gatchina (Russian Federation)] [and others; Collaboration: HERMES Recoil Detector Group

    2013-02-15

    For the final running period of HERA, a recoil detector was installed at the HERMES experiment to improve measurements of hard exclusive processes in charged-lepton nucleon scattering. Here, deeply virtual Compton scattering is of particular interest as this process provides constraints on generalised parton distributions that give access to the total angular momenta of quarks within the nucleon. The HERMES recoil detector was designed to improve the selection of exclusive events by a direct measurement of the four-momentum of the recoiling particle. It consisted of three components: two layers of double-sided silicon strip sensors inside the HERA beam vacuum, a two-barrel scintillating fibre tracker, and a photon detector. All sub-detectors were located inside a solenoidal magnetic field with an integrated field strength of 1Tm. The recoil detector was installed in late 2005. After the commissioning of all components was finished in September 2006, it operated stably until the end of data taking at HERA end of June 2007. The present paper gives a brief overview of the physics processes of interest and the general detector design. The recoil detector components, their calibration, the momentum reconstruction of charged particles, and the event selection are described in detail. The paper closes with a summary of the performance of the detection system.

  14. Smile detectors correlation

    Science.gov (United States)

    Yuksel, Kivanc; Chang, Xin; Skarbek, Władysław

    2017-08-01

    The novel smile recognition algorithm is presented based on extraction of 68 facial salient points (fp68) using the ensemble of regression trees. The smile detector exploits the Support Vector Machine linear model. It is trained with few hundreds exemplar images by SVM algorithm working in 136 dimensional space. It is shown by the strict statistical data analysis that such geometric detector strongly depends on the geometry of mouth opening area, measured by triangulation of outer lip contour. To this goal two Bayesian detectors were developed and compared with SVM detector. The first uses the mouth area in 2D image, while the second refers to the mouth area in 3D animated face model. The 3D modeling is based on Candide-3 model and it is performed in real time along with three smile detectors and statistics estimators. The mouth area/Bayesian detectors exhibit high correlation with fp68/SVM detector in a range [0:8; 1:0], depending mainly on light conditions and individual features with advantage of 3D technique, especially in hard light conditions.

  15. The HERMES recoil detector

    Science.gov (United States)

    Airapetian, A.; Aschenauer, E. C.; Belostotski, S.; Borisenko, A.; Bowles, J.; Brodski, I.; Bryzgalov, V.; Burns, J.; Capitani, G. P.; Carassiti, V.; Ciullo, G.; Clarkson, A.; Contalbrigo, M.; De Leo, R.; De Sanctis, E.; Diefenthaler, M.; Di Nezza, P.; Düren, M.; Ehrenfried, M.; Guler, H.; Gregor, I. M.; Hartig, M.; Hill, G.; Hoek, M.; Holler, Y.; Hristova, I.; Jo, H. S.; Kaiser, R.; Keri, T.; Kisselev, A.; Krause, B.; Krauss, B.; Lagamba, L.; Lehmann, I.; Lenisa, P.; Lu, S.; Lu, X.-G.; Lumsden, S.; Mahon, D.; Martinez de la Ossa, A.; Murray, M.; Mussgiller, A.; Nowak, W.-D.; Naryshkin, Y.; Osborne, A.; Pappalardo, L. L.; Perez-Benito, R.; Petrov, A.; Pickert, N.; Prahl, V.; Protopopescu, D.; Reinecke, M.; Riedl, C.; Rith, K.; Rosner, G.; Rubacek, L.; Ryckbosch, D.; Salomatin, Y.; Schnell, G.; Seitz, B.; Shearer, C.; Shutov, V.; Statera, M.; Steijger, J. J. M.; Stenzel, H.; Stewart, J.; Stinzing, F.; Trzcinski, A.; Tytgat, M.; Vandenbroucke, A.; Van Haarlem, Y.; Van Hulse, C.; Varanda, M.; Veretennikov, D.; Vilardi, I.; Vikhrov, V.; Vogel, C.; Yaschenko, S.; Ye, Z.; Yu, W.; Zeiler, D.; Zihlmann, B.

    2013-05-01

    For the final running period of HERA, a recoil detector was installed at the HERMES experiment to improve measurements of hard exclusive processes in charged-lepton nucleon scattering. Here, deeply virtual Compton scattering is of particular interest as this process provides constraints on generalised parton distributions that give access to the total angular momenta of quarks within the nucleon. The HERMES recoil detector was designed to improve the selection of exclusive events by a direct measurement of the four-momentum of the recoiling particle. It consisted of three components: two layers of double-sided silicon strip sensors inside the HERA beam vacuum, a two-barrel scintillating fibre tracker, and a photon detector. All sub-detectors were located inside a solenoidal magnetic field with a field strength of 1T. The recoil detector was installed in late 2005. After the commissioning of all components was finished in September 2006, it operated stably until the end of data taking at HERA end of June 2007. The present paper gives a brief overview of the physics processes of interest and the general detector design. The recoil detector components, their calibration, the momentum reconstruction of charged particles, and the event selection are described in detail. The paper closes with a summary of the performance of the detection system.

  16. Ballistic superconductivity in semiconductor nanowires.

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K; van Veen, Jasper; de Moor, Michiel W A; Bommer, Jouri D S; van Woerkom, David J; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Quintero-Pérez, Marina; Cassidy, Maja C; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P

    2017-07-06

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.

  17. Reserve current analysis in semiconductor insulator semiconductor ...

    African Journals Online (AJOL)

    Reserve current analysis in semiconductor insulator semiconductor (SIS) solar cells. H Yakubu, PK Mensah. Abstract. No Abstract. Journal of the Ghana Association Vol. 2 (3) 1999: pp. 1-4. Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT.

  18. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  19. Department of Radiation Detectors - Overview

    Energy Technology Data Exchange (ETDEWEB)

    Piekoszewski, J. [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

    1997-12-31

    Work carried out in 1996 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. The Departamental objectives are: a search for new types of detectors, adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, producing unique detectors tailored for physics experiments, manufacturing standard detectors for radiation measuring instruments. These objectives were accomplished in 1996 by: research on unique detectors for nuclear physics (e.g. a spherical set of particle detectors silicon ball), detectors for particle identification), development of technology of high-resistivity silicon detectors HRSi (grant proposal), development of thermoelectric cooling systems (grant proposal), research on p-i-n photodiode-based personal dosimeters, study of applicability of industrial planar technology in producing detectors, manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. The Department conducts research on the design and technology involved in producing X-ray generators based on X-ray tubes of special construction. Various tube models and their power supplies were developed. Some work has also been devoted to the detection and dosimetry of X-rays. X-ray tube generators are applied to non-destructive testing and are components of analytical systems such as: X-ray fluorescence chemical composition analysis, gauges of layer thickness and composition stress measurements, on-line control of processes, others where an X-ray tube may replace a radio-isotope source. In 1996, the Department: reviewed the domestic demand for X-ray generators, developed an X-ray generator for diagnosis of ostheroporosis of human limbs, prepared a grant proposal for the development of a new instrument for radiotherapy, the so-called needle-like X-ray tube. (author).

  20. ZnO UV Detectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation-hard UV detectors will be developed with ZnO in Phase I efforts by MOXtronics, Inc. (MOX). ZnO is a very suitable material for fabrication of high-speed,...

  1. AlN Based Extreme Ultraviolet (EUV) Detectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We...

  2. Cryogenic Tracking Detectors

    CERN Multimedia

    Luukka, P R; Tuominen, E M; Mikuz, M

    2002-01-01

    The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN$_2$) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result The first goal of the approved extension of the RD39 program is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particular we shall concentrate on processes and materials that could significantly reduce th...

  3. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    Science.gov (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    -based devices, plasmonic and photonic crystal resonators, infrared detectors and focal plane arrays, and photovoltaic devices and solar cells. This cluster presents a subset of the symposium topics, namely semiconductor emitters, semiconductor detectors, and semiconductor-based flexible devices.

  4. Impact of radiation on breakdown performance of Si strip detectors

    CERN Document Server

    Bhardwaj, A; Chatterji, S; Ranjan, Kirti; Shivpuri, E K; Srivastava-Ajay, K

    2002-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments, like Large Hadron Collider (LHC etc.) makes radiation hardness the most urgent demand for Si detectors. The radiation hardness of Si strip detectors especially developed for LHC experiment was investigated with respect to ionizing and nonionizing radiation using computer simulations. (10 refs).

  5. Particle detectors

    CERN Multimedia

    CERN. Geneva

    1999-01-01

    Introduction, interaction of radiation with matter measurement of momentum of charged particles, of energy of e/gamma, hadrons, identification of particles. Design of HEP detectors. Principle of operation and performance of tracking sub-detectors, calorimeters and muon system.

  6. Detector Unit

    CERN Multimedia

    1960-01-01

    Original detector unit of the Instituut voor Kernfysisch Onderzoek (IKO) BOL project. This detector unit shows that silicon detectors for nuclear physics particle detection were already developed and in use in the 1960's in Amsterdam. Also the idea of putting 'strips' onto the silicon for high spatial resolution of a particle's impact on the detector were implemented in the BOL project which used 64 of these detector units. The IKO BOL project with its silicon particle detectors was designed, built and operated from 1965 to roughly 1977. Detector Unit of the BOL project: These detectors, notably the ‘checkerboard detector’, were developed during the years 1964-1968 in Amsterdam, The Netherlands, by the Natuurkundig Laboratorium of the N.V. Philips Gloeilampen Fabrieken. This was done in close collaboration with the Instituut voor Kernfysisch Onderzoek (IKO) where the read-out electronics for their use in the BOL Project was developed and produced.

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Enhancement of superconducting critical current by injection of quasiparticles in superconductor semiconductor devices

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Sørensen, C. B.

    2000-01-01

    We report new measurements on 3-terminal superconductor semiconductor injection devices, demonstrating enhancement of the supercurrent by injection from a superconducting injector electrode. Two other electrodes were used as detectors. Applying a small voltage to the injector, reduced the maximum...

  9. Semiconductor devices physics and technology

    CERN Document Server

    Sze, Simon

    2012-01-01

    Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

  10. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...

  11. Optoelectronic~Analogue~Signal~Transfer~for~LHC~Detectors

    CERN Multimedia

    Stefanini, G; Reinhart, F K; Batten, J C

    2002-01-01

    % RD23 \\\\ \\\\ \\\\ \\\\The main goal of the RD23 project is to develop optical fiber links for volume application in the analog signal transfer of tracking detectors at LHC. Key requirements were radiation hardness, low power dissipation and affordable cost. The technique proposed initially was based on external modulation, and the project was targeted at the development of electro-optic intensity modulators as transmitters. In 1996, this approach was abandoned in favor of a system based on directly modulated semiconductor laser transmitters. This configuration was subsequently adopted as baseline choice by the CMS experiment for its tracker readout system. \\\\ \\\\In view of qualifying the radiation hardness of all optical link components to be installed at LHC front-ends, extensive validation tests took place in 1997 and 1998. Irradiations of lasers, pin-diodes, optical fibers and connectors were carried out with neutrons ($\\sim$6MeV) and $^{60}$Co gamma rays. In addition, lasers and pin-diodes in die as well as pa...

  12. Operation and performance of the ATLAS semiconductor tracker

    CERN Document Server

    Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; Åkesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; Åsman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimarães da Costa, João; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jürg; Bernabéu, José; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin; Blackburn, Daniel; Blair, Robert; Blanchard, Jean-Baptiste; Blazek, Tomas; Bloch, Ingo; Blocker, Craig; Blum, Walter; Blumenschein, Ulrike; Bobbink, Gerjan; Bobrovnikov, Victor; Bocchetta, Simona Serena; Bocci, Andrea; Boddy, Christopher Richard; Boehler, Michael; Boek, Jennifer; Boek, Thorsten Tobias; Bogaerts, Joannes Andreas; Bogdanchikov, Alexander; Bogouch, Andrei; Bohm, Christian; Bohm, Jan; Boisvert, Veronique; Bold, Tomasz; Boldea, Venera; Boldyrev, Alexey; Bomben, Marco; Bona, Marcella; Boonekamp, Maarten; Borisov, Anatoly; Borissov, Guennadi; Borri, Marcello; Borroni, Sara; Bortfeldt, Jonathan; Bortolotto, Valerio; Bos, Kors; Boscherini, Davide; Bosman, Martine; Boterenbrood, Hendrik; Boudreau, Joseph; Bouffard, Julian; Bouhova-Thacker, Evelina Vassileva; Boumediene, Djamel Eddine; Bourdarios, Claire; Bousson, Nicolas; Boutouil, Sara; Boveia, Antonio; Boyd, James; Boyko, Igor; Bozovic-Jelisavcic, Ivanka; Bracinik, Juraj; Branchini, Paolo; Brandt, Andrew; Brandt, Gerhard; Brandt, Oleg; Bratzler, Uwe; Brau, Benjamin; Brau, James; Braun, Helmut; Brazzale, Simone Federico; Brelier, Bertrand; Brendlinger, Kurt; Brennan, Amelia Jean; Brenner, Richard; Bressler, Shikma; Bristow, Kieran; Bristow, Timothy Michael; Britton, Dave; Brochu, Frederic; Brock, Ian; Brock, Raymond; Bromberg, Carl; Bronner, Johanna; Brooijmans, Gustaaf; Brooks, Timothy; Brooks, William; Brosamer, Jacquelyn; Brost, Elizabeth; Brown, Gareth; Brown, Jonathan; Bruckman de Renstrom, Pawel; Bruncko, Dusan; Bruneliere, Renaud; Brunet, Sylvie; Bruni, Alessia; Bruni, Graziano; Bruschi, Marco; Bryngemark, Lene; Buanes, Trygve; Buat, Quentin; Bucci, Francesca; Buchholz, Peter; Buckingham, Ryan; Buckley, Andrew; Buda, Stelian Ioan; Budagov, Ioulian; Buehrer, Felix; Bugge, Lars; Bugge, Magnar Kopangen; Bulekov, Oleg; Bundock, Aaron Colin; Burckhart, Helfried; Burdin, Sergey; Burghgrave, Blake; Burke, Stephen; Burmeister, Ingo; Busato, Emmanuel; Büscher, Daniel; Büscher, Volker; Bussey, Peter; Buszello, Claus-Peter; Butler, Bart; Butler, John; Butt, Aatif Imtiaz; Buttar, Craig; Butterworth, Jonathan; Butti, Pierfrancesco; Buttinger, William; Buzatu, Adrian; Byszewski, Marcin; Cabrera Urbán, Susana; Caforio, Davide; Cakir, Orhan; Calafiura, Paolo; Calandri, Alessandro; Calderini, Giovanni; Calfayan, Philippe; Calkins, Robert; Caloba, Luiz; Calvet, David; Calvet, Samuel; Camacho Toro, Reina; Camarda, Stefano; Cameron, David; Caminada, Lea Michaela; Caminal Armadans, Roger; Campana, Simone; Campanelli, Mario; Campoverde, Angel; Canale, Vincenzo; Canepa, Anadi; Cantero, Josu; Cantrill, Robert; Cao, Tingting; Capeans Garrido, Maria Del Mar; Caprini, Irinel; Caprini, Mihai; Capua, Marcella; Caputo, Regina; Cardarelli, Roberto; Carli, Tancredi; Carlino, Gianpaolo; Carminati, Leonardo; Caron, Sascha; Carquin, Edson; Carrillo-Montoya, German D; Carter, Antony; Carter, Janet; Carvalho, João; Casadei, Diego; Casado, Maria Pilar; Castaneda-Miranda, Elizabeth; Castelli, Angelantonio; Castillo Gimenez, Victoria; Castro, Nuno Filipe; Catastini, Pierluigi; Catinaccio, Andrea; Catmore, James; Cattai, Ariella; Cattani, Giordano; Caughron, Seth; Cavaliere, Viviana; Cavalli, Donatella; Cavalli-Sforza, Matteo; Cavasinni, Vincenzo; Ceradini, Filippo; Cerio, Benjamin; Cerny, Karel; Santiago Cerqueira, Augusto; Cerri, Alessandro; Cerrito, Lucio; Cerutti, Fabio; Cerv, Matevz; Cervelli, Alberto; Cetin, Serkant Ali; Chafaq, Aziz; Chakraborty, Dhiman; Chalupkova, Ina; Chan, Kevin; Chang, Philip; Chapleau, Bertrand; Chapman, John Derek; Charfeddine, Driss; Charlton, Dave; Chau, Chav Chhiv; Chavez Barajas, Carlos Alberto; Cheatham, Susan; Chegwidden, Andrew; Chekanov, Sergei; Chekulaev, Sergey; Chelkov, Gueorgui; Chelstowska, Magda Anna; Chen, Chunhui; Chen, Hucheng; Chen, Karen; Chen, Liming; Chen, Shenjian; Chen, Xin; Chen, Yujiao; Cheng, Hok Chuen; Cheng, Yangyang; Cheplakov, Alexander; Cherkaoui El Moursli, Rajaa; Chernyatin, Valeriy; Cheu, Elliott; Chevalier, Laurent; Chiarella, Vitaliano; Chiefari, Giovanni; Childers, John Taylor; Chilingarov, Alexandre; Chiodini, Gabriele; Chisholm, Andrew; Chislett, Rebecca Thalatta; Chitan, Adrian; Chizhov, Mihail; Chouridou, Sofia; Chow, Bonnie Kar Bo; Christidi, Ilektra-Athanasia; Chromek-Burckhart, Doris; Chu, Ming-Lee; Chudoba, Jiri; Chwastowski, Janusz; Chytka, Ladislav; Ciapetti, Guido; Ciftci, Abbas Kenan; Ciftci, Rena; Cinca, Diane; Cindro, Vladimir; Ciocio, Alessandra; Cirkovic, Predrag; Citron, Zvi Hirsh; Citterio, Mauro; Ciubancan, Mihai; Clark, Allan G; Clark, Philip James; Clarke, Robert; Cleland, Bill; Clemens, Jean-Claude; Clement, Christophe; Coadou, Yann; Cobal, Marina; Coccaro, Andrea; Cochran, James H; Coffey, Laurel; Cogan, Joshua Godfrey; Coggeshall, James; Cole, Brian; Cole, Stephen; Colijn, Auke-Pieter; Collins-Tooth, Christopher; Collot, Johann; Colombo, Tommaso; Colon, German; Compostella, Gabriele; Conde Muiño, Patricia; Coniavitis, Elias; Conidi, Maria Chiara; Connell, Simon Henry; Connelly, Ian; Consonni, Sofia Maria; Consorti, Valerio; Constantinescu, Serban; Conta, Claudio; Conti, Geraldine; Conventi, Francesco; Cooke, Mark; Cooper, Ben; Cooper-Sarkar, Amanda; Cooper-Smith, Neil; Copic, Katherine; Cornelissen, Thijs; Corradi, Massimo; Corriveau, Francois; Corso-Radu, Alina; Cortes-Gonzalez, Arely; Cortiana, Giorgio; Costa, Giuseppe; Costa, María José; Costanzo, Davide; Côté, David; Cottin, Giovanna; Cowan, Glen; Cox, Brian; Cranmer, Kyle; Cree, Graham; Crépé-Renaudin, Sabine; Crescioli, Francesco; Crispin Ortuzar, Mireia; Cristinziani, Markus; Croft, Vince; Crosetti, Giovanni; Cuciuc, Constantin-Mihai; Cuenca Almenar, Cristóbal; Cuhadar Donszelmann, Tulay; Cummings, Jane; Curatolo, Maria; Cuthbert, Cameron; Czirr, Hendrik; Czodrowski, Patrick; Czyczula, Zofia; D'Auria, Saverio; D'Onofrio, Monica; Da Cunha Sargedas De Sousa, Mario Jose; Da Via, Cinzia; Dabrowski, Wladyslaw; Dafinca, Alexandru; Dai, Tiesheng; Dale, Orjan; Dallaire, Frederick; Dallapiccola, Carlo; Dam, Mogens; Daniells, Andrew Christopher; Dano Hoffmann, Maria; Dao, Valerio; Darbo, Giovanni; Darlea, Georgiana Lavinia; Darmora, Smita; Dassoulas, James; Dattagupta, Aparajita; Davey, Will; David, Claire; Davidek, Tomas; Davies, Eleanor; Davies, Merlin; Davignon, Olivier; Davison, Adam; Davison, Peter; Davygora, Yuriy; Dawe, Edmund; Dawson, Ian; Daya-Ishmukhametova, Rozmin; De, Kaushik; de Asmundis, Riccardo; De Castro, Stefano; De Cecco, Sandro; de Graat, Julien; De Groot, Nicolo; de Jong, Paul; De la Torre, Hector; De Lorenzi, Francesco; De Nooij, Lucie; De Pedis, Daniele; De Salvo, Alessandro; De Sanctis, Umberto; De Santo, Antonella; De Vivie De Regie, Jean-Baptiste; De Zorzi, Guido; Dearnaley, William James; Debbe, Ramiro; Debenedetti, Chiara; Dechenaux, Benjamin; Dedovich, Dmitri; Degenhardt, James; Deigaard, Ingrid; Del Peso, Jose; Del Prete, Tarcisio; Deliot, Frederic; Delitzsch, Chris Malena; Deliyergiyev, Maksym; Dell'Acqua, Andrea; Dell'Asta, Lidia; Dell'Orso, Mauro; Della Pietra, Massimo; della Volpe, Domenico; Delmastro, Marco; Delsart, Pierre-Antoine; Deluca, Carolina; Demers, Sarah; Demichev, Mikhail; Demilly, Aurelien; Denisov, Sergey; Derendarz, Dominik; Derkaoui, Jamal Eddine; Derue, Frederic; Dervan, Paul; Desch, Klaus Kurt; Deterre, Cecile; Deviveiros, Pier-Olivier; Dewhurst, Alastair; Dhaliwal, Saminder; Di Ciaccio, Anna; Di Ciaccio, Lucia; Di Domenico, Antonio; Di Donato, Camilla; Di Girolamo, Alessandro; Di Girolamo, Beniamino; Di Mattia, Alessandro; Di Micco, Biagio; Di Nardo, Roberto; Di Simone, Andrea; Di Sipio, Riccardo; Di Valentino, David; Diaz, Marco Aurelio; Diehl, Edward; Dietrich, Janet; Dietzsch, Thorsten; Diglio, Sara; Dimitrievska, Aleksandra; Dingfelder, Jochen; Dionisi, Carlo; Dita, Petre; Dita, Sanda; Dittus, Fridolin; Djama, Fares; Djobava, Tamar; Barros do Vale, Maria Aline; Do Valle Wemans, André; Doan, Thi Kieu Oanh; Dobos, Daniel; Dobson, Ellie; Doglioni, Caterina; Doherty, Tom; Dohmae, Takeshi; Dolejsi, Jiri; Dolezal, Zdenek; Dolgoshein, Boris; Donadelli, Marisilvia; Donati, Simone; Dondero, Paolo; Donini, Julien; Dopke, Jens; Doria, Alessandra; Dos Anjos, Andre; Dova, Maria-Teresa; Doyle, Tony; Dris, Manolis; Dubbert, Jörg; Dube, Sourabh; Dubreuil, Emmanuelle; Duchovni, Ehud; Duckeck, Guenter; Ducu, Otilia Anamaria; Duda, Dominik; Dudarev, Alexey; Dudziak, Fanny; Duflot, Laurent; Duguid, Liam; Dührssen, Michael; Dunford, Monica; Duran Yildiz, Hatice; Düren, Michael; Durglishvili, Archil; Dwuznik, Michal; Dyndal, Mateusz; Ebke, Johannes; Edson, William; Edwards, Nicholas Charles; Ehrenfeld, Wolfgang; Eifert, Till; Eigen, Gerald; Einsweiler, Kevin; Ekelof, Tord; El Kacimi, Mohamed; Ellert, Mattias; Elles, Sabine; Ellinghaus, Frank; Ellis, Nicolas; Elmsheuser, Johannes; Elsing, Markus; Emeliyanov, Dmitry; Enari, Yuji; Endner, Oliver Chris; Endo, Masaki; Engelmann, Roderich; Erdmann, Johannes; Ereditato, Antonio; Eriksson, Daniel; Ernis, Gunar; Ernst, Jesse; Ernst, Michael; Ernwein, Jean; Errede, Deborah; Errede, Steven; Ertel, Eugen; Escalier, Marc; Esch, Hendrik; Escobar, Carlos; Esposito, Bellisario; Etienvre, Anne-Isabelle; Etzion, Erez; Evans, Hal; Fabbri, Laura; Facini, Gabriel; Fakhrutdinov, Rinat; Falciano, Speranza; Faltova, Jana; Fang, Yaquan; Fanti, Marcello; Farbin, Amir; Farilla, Addolorata; Farooque, Trisha; Farrell, Steven; Farrington, Sinead; Farthouat, Philippe; Fassi, Farida; Fassnacht, Patrick; Fassouliotis, Dimitrios; Favareto, Andrea; Fayard, Louis; Federic, Pavol; Fedin, Oleg; Fedorko, Wojciech; Fehling-Kaschek, Mirjam; Feigl, Simon; Feligioni, Lorenzo; Feng, Cunfeng; Feng, Eric; Feng, Haolu; Fenyuk, Alexander; Fernandez Perez, Sonia; Ferrag, Samir; Ferrando, James; Ferrari, Arnaud; Ferrari, Pamela; Ferrari, Roberto; Ferreira de Lima, Danilo Enoque; Ferrer, Antonio; Ferrere, Didier; Ferretti, Claudio; Ferretto Parodi, Andrea; Fiascaris, Maria; Fiedler, Frank; Filipčič, Andrej; Filipuzzi, Marco; Filthaut, Frank; Fincke-Keeler, Margret; Finelli, Kevin Daniel; Fiolhais, Miguel; Fiorini, Luca; Firan, Ana; Fischer, Julia; Fisher, Wade Cameron; Fitzgerald, Eric Andrew; Flechl, Martin; Fleck, Ivor; Fleischmann, Philipp; Fleischmann, Sebastian; Fletcher, Gareth Thomas; Fletcher, Gregory; Flick, Tobias; Floderus, Anders; Flores Castillo, Luis; Florez Bustos, Andres Carlos; Flowerdew, Michael; Formica, Andrea; Forti, Alessandra; Fortin, Dominique; Fournier, Daniel; Fox, Harald; Fracchia, Silvia; Francavilla, Paolo; Franchini, Matteo; Franchino, Silvia; Francis, David; Franklin, Melissa; Franz, Sebastien; Fraternali, Marco; French, Sky; Friedrich, Conrad; Friedrich, Felix; Froidevaux, Daniel; Frost, James; Fukunaga, Chikara; Fullana Torregrosa, Esteban; Fulsom, Bryan Gregory; Fuster, Juan; Gabaldon, Carolina; Gabizon, Ofir; Gabrielli, Alessandro; Gabrielli, Andrea; Gadatsch, Stefan; Gadomski, Szymon; Gagliardi, Guido; Gagnon, Pauline; Galea, Cristina; Galhardo, Bruno; Gallas, Elizabeth; Gallo, Valentina Santina; Gallop, Bruce; Gallus, Petr; Galster, Gorm Aske Gram Krohn; Gan, KK; Gandrajula, Reddy Pratap; Gao, Jun; Gao, Yongsheng; Garay Walls, Francisca; Garberson, Ford; García, Carmen; Garcia Argos, Carlos; García Navarro, José Enrique; Garcia-Sciveres, Maurice; Gardner, Robert; Garelli, Nicoletta; Garonne, Vincent; Gatti, Claudio; Gaudio, Gabriella; Gaur, Bakul; Gauthier, Lea; Gauzzi, Paolo; Gavrilenko, Igor; Gay, Colin; Gaycken, Goetz; Gazis, Evangelos; Ge, Peng; Gecse, Zoltan; Gee, Norman; Geerts, Daniël Alphonsus Adrianus; Geich-Gimbel, Christoph; Gellerstedt, Karl; Gemme, Claudia; Gemmell, Alistair; Genest, Marie-Hélène; Gentile, Simonetta; George, Matthias; George, Simon; Gerbaudo, Davide; Gershon, Avi; Ghazlane, Hamid; Ghodbane, Nabil; Giacobbe, Benedetto; Giagu, Stefano; Giangiobbe, Vincent; Giannetti, Paola; Gianotti, Fabiola; Gibbard, Bruce; Gibson, Stephen; Gilchriese, Murdock; Gillam, Thomas; Gillberg, Dag; Gilles, Geoffrey; Gingrich, Douglas; Giokaris, Nikos; Giordani, MarioPaolo; Giordano, Raffaele; Giorgi, Francesco Michelangelo; Giraud, Pierre-Francois; Giugni, Danilo; Giuliani, Claudia; Giulini, Maddalena; Gjelsten, Børge Kile; Gkialas, Ioannis; Gladilin, Leonid; Glasman, Claudia; Glatzer, Julian; Glaysher, Paul; Glazov, Alexandre; Glonti, George; Goblirsch-Kolb, Maximilian; Goddard, Jack Robert; Godfrey, Jennifer; Godlewski, Jan; Goeringer, Christian; Goldfarb, Steven; Golling, Tobias; Golubkov, Dmitry; Gomes, Agostinho; Gomez Fajardo, Luz Stella; Gonçalo, Ricardo; Goncalves Pinto Firmino Da Costa, Joao; Gonella, Laura; González de la Hoz, Santiago; Gonzalez Parra, Garoe; Gonzalez Silva, Laura; Gonzalez-Sevilla, Sergio; Goodrick, Maurice; Goossens, Luc; Gorbounov, Petr Andreevich; Gordon, Howard; Gorelov, Igor; Gorfine, Grant; Gorini, Benedetto; Gorini, Edoardo; Gorišek, Andrej; Gornicki, Edward; Goshaw, Alfred; Gössling, Claus; Gostkin, Mikhail Ivanovitch; Gouighri, Mohamed; Goujdami, Driss; Goulette, Marc Phillippe; Goussiou, Anna; Goy, Corinne; Gozpinar, Serdar; Grabas, Herve Marie Xavier; Graber, Lars; Grabowska-Bold, Iwona; Grafström, Per; Grahn, Karl-Johan; Gramling, Johanna; Gramstad, Eirik; Grancagnolo, Sergio; Grassi, Valerio; Gratchev, Vadim; Gray, Heather; Graziani, Enrico; Grebenyuk, Oleg; Greenwood, Zeno Dixon; Gregersen, Kristian; Gregor, Ingrid-Maria; Grenier, Philippe; Griffiths, Justin; Grigalashvili, Nugzar; Grillo, Alexander; Grimm, Kathryn; Grinstein, Sebastian; Gris, Philippe Luc Yves; Grishkevich, Yaroslav; Grivaz, Jean-Francois; Grohs, Johannes Philipp; Grohsjean, Alexander; Gross, Eilam; Grosse-Knetter, Joern; Grossi, Giulio Cornelio; Groth-Jensen, Jacob; Grout, Zara Jane; Grybel, Kai; Guan, Liang; Guescini, Francesco; Guest, Daniel; Gueta, Orel; Guicheney, Christophe; Guido, Elisa; Guillemin, Thibault; Guindon, Stefan; Gul, Umar; Gumpert, Christian; Gunther, Jaroslav; Guo, Jun; Gupta, Shaun; Gutierrez, Phillip; Gutierrez Ortiz, Nicolas Gilberto; Gutschow, Christian; Guttman, Nir; Guyot, Claude; Gwenlan, Claire; Gwilliam, Carl; Haas, Andy; Haber, Carl; Hadavand, Haleh Khani; Haddad, Nacim; Haefner, Petra; Hageboeck, Stephan; Hajduk, Zbigniew; Hakobyan, Hrachya; Haleem, Mahsana; Hall, David; Halladjian, Garabed; Hamacher, Klaus; Hamal, Petr; Hamano, Kenji; Hamer, Matthias; Hamilton, Andrew; Hamilton, Samuel; Hamnett, Phillip George; Han, Liang; Hanagaki, Kazunori; Hanawa, Keita; Hance, Michael; Hanke, Paul; Hansen, Jørgen Beck; Hansen, Jorn Dines; Hansen, Peter Henrik; Hara, Kazuhiko; Hard, Andrew; Harenberg, Torsten; Harkusha, Siarhei; Harper, Devin; Harrington, Robert; Harris, Orin; Harrison, Paul Fraser; Hartjes, Fred; Hasegawa, Satoshi; Hasegawa, Yoji; Hasib, A; Hassani, Samira; Haug, Sigve; Hauschild, Michael; Hauser, Reiner; Havranek, Miroslav; Hawkes, Christopher; Hawkings, Richard John; Hawkins, Anthony David; Hayashi, Takayasu; Hayden, Daniel; Hays, Chris; Hayward, Helen; Haywood, Stephen; Head, Simon; Heck, Tobias; Hedberg, Vincent; Heelan, Louise; Heim, Sarah; Heim, Timon; Heinemann, Beate; Heinrich, Lukas; Heisterkamp, Simon; Hejbal, Jiri; Helary, Louis; Heller, Claudio; Heller, Matthieu; Hellman, Sten; Hellmich, Dennis; Helsens, Clement; Henderson, James; Henderson, Robert; Hengler, Christopher; Henrichs, Anna; Henriques Correia, Ana Maria; Henrot-Versille, Sophie; Hensel, Carsten; Herbert, Geoffrey Henry; Hernández Jiménez, Yesenia; Herrberg-Schubert, Ruth; Herten, Gregor; Hertenberger, Ralf; Hervas, Luis; Hesketh, Gavin Grant; Hessey, Nigel; Hickling, Robert; Higón-Rodriguez, Emilio; Hill, Ewan; Hill, John; Hiller, Karl Heinz; Hillert, Sonja; Hillier, Stephen; Hinchliffe, Ian; Hines, Elizabeth; Hirose, Minoru; Hirschbuehl, Dominic; Hobbs, John; Hod, Noam; Hodgkinson, Mark; Hodgson, Paul; Hoecker, Andreas; Hoeferkamp, Martin; Hoffman, Julia; Hoffmann, Dirk; Hofmann, Julia Isabell; Hohlfeld, Marc; Holmes, Tova Ray; Hong, Tae Min; Hooft van Huysduynen, Loek; Hostachy, Jean-Yves; Hou, Suen; Hoummada, Abdeslam; Howard, Jacob; Howarth, James; Hrabovsky, Miroslav; Hristova, Ivana; Hrivnac, Julius; Hryn'ova, Tetiana; Hsu, Pai-hsien Jennifer; Hsu, Shih-Chieh; Hu, Diedi; Hu, Xueye; Huang, Yanping; Hubacek, Zdenek; Hubaut, Fabrice; Huegging, Fabian; Huffman, Todd Brian; Hughes, Emlyn; Hughes, Gareth; Huhtinen, Mika; Hülsing, Tobias Alexander; Hurwitz, Martina; Huseynov, Nazim; Huston, Joey; Huth, John; Iacobucci, Giuseppe; Iakovidis, Georgios; Ibragimov, Iskander; Iconomidou-Fayard, Lydia; Idarraga, John; Ideal, Emma; Iengo, Paolo; Igonkina, Olga; Iizawa, Tomoya; Ikegami, Yoichi; Ikematsu, Katsumasa; Ikeno, Masahiro; Iliadis, Dimitrios; Ilic, Nikolina; Inamaru, Yuki; Ince, Tayfun; Ioannou, Pavlos; Iodice, Mauro; Iordanidou, Kalliopi; Ippolito, Valerio; Irles Quiles, Adrian; Isaksson, Charlie; Ishino, Masaya; Ishitsuka, Masaki; Ishmukhametov, Renat; Issever, Cigdem; Istin, Serhat; Iturbe Ponce, Julia Mariana; Ivarsson, Jenny; Ivashin, Anton; Iwanski, Wieslaw; Iwasaki, Hiroyuki; Izen, Joseph; Izzo, Vincenzo; Jackson, Brett; Jackson, John; Jackson, Matthew; Jackson, Paul; Jaekel, Martin; Jain, Vivek; Jakobs, Karl; Jakobsen, Sune; Jakoubek, Tomas; Jakubek, Jan; Jamin, David Olivier; Jana, Dilip; Jansen, Eric; Jansen, Hendrik; Janssen, Jens; Janus, Michel; Jarlskog, Göran; Javadov, Namig; Javůrek, Tomáš; Jeanty, Laura; Jeng, Geng-yuan; Jennens, David; Jenni, Peter; Jentzsch, Jennifer; Jeske, Carl; Jézéquel, Stéphane; Ji, Haoshuang; Ji, Weina; Jia, Jiangyong; Jiang, Yi; Jimenez Belenguer, Marcos; Jin, Shan; Jinaru, Adam; Jinnouchi, Osamu; Joergensen, Morten Dam; Johansson, Erik; Johansson, Per; Johns, Kenneth; Jon-And, Kerstin; Jones, Graham; Jones, Roger; Jones, Tim; Jongmanns, Jan; Jorge, Pedro; Joseph, John; Joshi, Kiran Daniel; Jovicevic, Jelena; Ju, Xiangyang; Jung, Christian; Jungst, Ralph Markus; Jussel, Patrick; Juste Rozas, Aurelio; Kaci, Mohammed; Kaczmarska, Anna; Kado, Marumi; Kagan, Harris; Kagan, Michael; Kajomovitz, Enrique; Kama, Sami; Kanaya, Naoko; Kaneda, Michiru; Kaneti, Steven; Kanno, Takayuki; Kantserov, Vadim; Kanzaki, Junichi; Kaplan, Benjamin; Kapliy, Anton; Kar, Deepak; Karakostas, Konstantinos; Karastathis, Nikolaos; Karnevskiy, Mikhail; Karpov, Sergey; Karthik, Krishnaiyengar; Kartvelishvili, Vakhtang; Karyukhin, Andrey; Kashif, Lashkar; Kasieczka, Gregor; Kass, Richard; Kastanas, Alex; Kataoka, Yousuke; Katre, Akshay; Katzy, Judith; Kaushik, Venkatesh; Kawagoe, Kiyotomo; Kawamoto, Tatsuo; Kawamura, Gen; Kazama, Shingo; Kazanin, Vassili; Kazarinov, Makhail; Keeler, Richard; Keener, Paul; Kehoe, Robert; Keil, Markus; Keller, John; Keoshkerian, Houry; Kepka, Oldrich; Kerševan, Borut Paul; Kersten, Susanne; Kessoku, Kohei; Keung, Justin; Khalil-zada, Farkhad; Khandanyan, Hovhannes; Khanov, Alexander; Khodinov, Alexander; Khomich, Andrei; Khoo, Teng Jian; Khoriauli, Gia; Khoroshilov, Andrey; Khovanskiy, Valery; Khramov, Evgeniy; Khubua, Jemal; Kim, Hee Yeun; Kim, Hyeon Jin; Kim, Shinhong; Kimura, Naoki; Kind, Oliver; King, Barry; King, Matthew; King, Robert Steven Beaufoy; King, Samuel Burton; Kirk, Julie; Kiryunin, Andrey; Kishimoto, Tomoe; Kisielewska, Danuta; Kiss, Florian; Kitamura, Takumi; Kittelmann, Thomas; Kiuchi, Kenji; Kladiva, Eduard; Klein, Max; Klein, Uta; Kleinknecht, Konrad; Klimek, Pawel; Klimentov, Alexei; Klingenberg, Reiner; Klinger, Joel Alexander; Klioutchnikova, Tatiana; Klok, Peter; Kluge, Eike-Erik; Kluit, Peter; Kluth, Stefan; Kneringer, Emmerich; Knoops, Edith; Knue, Andrea; Kobayashi, Tomio; Kobel, Michael; Kocian, Martin; Kodys, Peter; Koevesarki, Peter; Koffas, Thomas; Koffeman, Els; Kogan, Lucy Anne; Kohlmann, Simon; Kohout, Zdenek; Kohriki, Takashi; Koi, Tatsumi; Kolanoski, Hermann; Koletsou, Iro; Koll, James; Komar, Aston; Komori, Yuto; Kondo, Takahiko; Kondrashova, Nataliia; Köneke, Karsten; König, Adriaan; König, Sebastian; Kono, Takanori; Konoplich, Rostislav; Konstantinidis, Nikolaos; Kopeliansky, Revital; Koperny, Stefan; Köpke, Lutz; Kopp, Anna Katharina; Korcyl, Krzysztof; Kordas, Kostantinos; Korn, Andreas; Korol, Aleksandr; Korolkov, Ilya; Korolkova, Elena; Korotkov, Vladislav; Kortner, Oliver; Kortner, Sandra; Kostyukhin, Vadim; Kotov, Sergey; Kotov, Vladislav; Kotwal, Ashutosh; Kourkoumelis, Christine; Kouskoura, Vasiliki; Koutsman, Alex; Kowalewski, Robert Victor; Kowalski, Tadeusz; Kozanecki, Witold; Kozhin, Anatoly; Kral, Vlastimil; Kramarenko, Viktor; Kramberger, Gregor; Krasnopevtsev, Dimitriy; Krasny, Mieczyslaw Witold; Krasznahorkay, Attila; Kraus, Jana; Kravchenko, Anton; Kreiss, Sven; Kretz, Moritz; Kretzschmar, Jan; Kreutzfeldt, Kristof; Krieger, Peter; Kroeninger, Kevin; Kroha, Hubert; Kroll, Joe; Kroseberg, Juergen; Krstic, Jelena; Kruchonak, Uladzimir; Krüger, Hans; Kruker, Tobias; Krumnack, Nils; Krumshteyn, Zinovii; Kruse, Amanda; Kruse, Mark; Kruskal, Michael; Kubik, Petr; Kubota, Takashi; Kuday, Sinan; Kuehn, Susanne; Kugel, Andreas; Kuhl, Andrew; Kuhl, Thorsten; Kukhtin, Victor; Kulchitsky, Yuri; Kuleshov, Sergey; Kuna, Marine; Kunkle, Joshua; Kupco, Alexander; Kurashige, Hisaya; Kurochkin, Yurii; Kurumida, Rie; Kus, Vlastimil; Kuwertz, Emma Sian; Kuze, Masahiro; Kvita, Jiri; La Rosa, Alessandro; La Rotonda, Laura; Lacasta, Carlos; Lacava, Francesco; Lacey, James; Lacker, Heiko; Lacour, Didier; Lacuesta, Vicente Ramón; Ladygin, Evgueni; Lafaye, Remi; Laforge, Bertrand; Lagouri, Theodota; Lai, Stanley; Laier, Heiko; Lambourne, Luke; Lammers, Sabine; Lampen, Caleb; Lampl, Walter; Lançon, Eric; Landgraf, Ulrich; Landon, Murrough; Lang, Valerie Susanne; Lange, Clemens; Lankford, Andrew; Lanni, Francesco; Lantzsch, Kerstin; Laplace, Sandrine; Lapoire, Cecile; Laporte, Jean-Francois; Lari, Tommaso; Lassnig, Mario; Laurelli, Paolo; Lavrijsen, Wim; Law, Alexander; Laycock, Paul; Le, Bao Tran; Le Dortz, Olivier; Le Guirriec, Emmanuel; Le Menedeu, Eve; LeCompte, Thomas; Ledroit-Guillon, Fabienne Agnes Marie; Lee, Claire Alexandra; Lee, Hurng-Chun; Lee, Jason; Lee, Shih-Chang; Lee, Lawrence; Lefebvre, Guillaume; Lefebvre, Michel; Legger, Federica; Leggett, Charles; Lehan, Allan; Lehmacher, Marc; Lehmann Miotto, Giovanna; Lei, Xiaowen; Leister, Andrew Gerard; Leite, Marco Aurelio Lisboa; Leitner, Rupert; Lellouch, Daniel; Lemmer, Boris; Leney, Katharine; Lenz, Tatjana; Lenzen, Georg; Lenzi, Bruno; Leone, Robert; Leonhardt, Kathrin; Leontsinis, Stefanos; Leroy, Claude; Lester, Christopher; Lester, Christopher Michael; Levchenko, Mikhail; Levêque, Jessica; Levin, Daniel; Levinson, Lorne; Levy, Mark; Lewis, Adrian; Lewis, George; Leyko, Agnieszka; Leyton, Michael; Li, Bing; Li, Bo; Li, Haifeng; Li, Ho Ling; Li, Liang; Li, Shu; Li, Yichen; Liang, Zhijun; Liao, Hongbo; Liberti, Barbara; Lichard, Peter; Lie, Ki; Liebal, Jessica; Liebig, Wolfgang; Limbach, Christian; Limosani, Antonio; Limper, Maaike; Lin, Simon; Linde, Frank; Lindquist, Brian Edward; Linnemann, James; Lipeles, Elliot; Lipniacka, Anna; Lisovyi, Mykhailo; Liss, Tony; Lissauer, David; Lister, Alison; Litke, Alan; Liu, Bo; Liu, Dong; Liu, Jianbei; Liu, Kun; Liu, Lulu; Liu, Miaoyuan; Liu, Minghui; Liu, Yanwen; Livan, Michele; Livermore, Sarah; Lleres, Annick; Llorente Merino, Javier; Lloyd, Stephen; Lo Sterzo, Francesco; Lobodzinska, Ewelina; Loch, Peter; Lockman, William; Loddenkoetter, Thomas; Loebinger, Fred; Loevschall-Jensen, Ask Emil; Loginov, Andrey; Loh, Chang Wei; Lohse, Thomas; Lohwasser, Kristin; Lokajicek, Milos; Lombardo, Vincenzo Paolo; Long, Brian Alexander; Long, Jonathan; Long, Robin Eamonn; Lopes, Lourenco; Lopez Mateos, David; Lopez Paredes, Brais; Lorenz, Jeanette; Lorenzo Martinez, Narei; Losada, Marta; Loscutoff, Peter; Lou, XinChou; Lounis, Abdenour; Love, Jeremy; Love, Peter; Lowe, Andrew; Lu, Feng; Lubatti, Henry; Luci, Claudio; Lucotte, Arnaud; Luehring, Frederick; Lukas, Wolfgang; Luminari, Lamberto; Lundberg, Olof; Lund-Jensen, Bengt; Lungwitz, Matthias; Lynn, David; Lysak, Roman; Lytken, Else; Ma, Hong; Ma, Lian Liang; Maccarrone, Giovanni; Macchiolo, Anna; Machado Miguens, Joana; Macina, Daniela; Madaffari, Daniele; Madar, Romain; Maddocks, Harvey Jonathan; Mader, Wolfgang; Madsen, Alexander; Maeno, Mayuko; Maeno, Tadashi; Magradze, Erekle; Mahboubi, Kambiz; Mahlstedt, Joern; Mahmoud, Sara; Maiani, Camilla; Maidantchik, Carmen; Maio, Amélia; Majewski, Stephanie; Makida, Yasuhiro; Makovec, Nikola; Mal, Prolay; Malaescu, Bogdan; Malecki, Pawel; Maleev, Victor; Malek, Fairouz; Mallik, Usha; Malon, David; Malone, Caitlin; Maltezos, Stavros; Malyshev, Vladimir; Malyukov, Sergei; Mamuzic, Judita; Mandelli, Beatrice; Mandelli, Luciano; Mandić, Igor; Mandrysch, Rocco; Maneira, José; Manfredini, Alessandro; Manhaes de Andrade Filho, Luciano; Manjarres Ramos, Joany Andreina; Mann, Alexander; Manning, Peter; Manousakis-Katsikakis, Arkadios; Mansoulie, Bruno; Mantifel, Rodger; Mapelli, Livio; March, Luis; Marchand, Jean-Francois; Marchiori, Giovanni; Marcisovsky, Michal; Marino, Christopher; Marques, Carlos; Marroquim, Fernando; Marsden, Stephen Philip; Marshall, Zach; Marti, Lukas Fritz; Marti-Garcia, Salvador; Martin, Brian; Martin, Brian Thomas; Martin, Jean-Pierre; Martin, Tim; Martin, Victoria Jane; Martin dit Latour, Bertrand; Martinez, Homero; Martinez, Mario; Martin-Haugh, Stewart; Martyniuk, Alex; Marx, Marilyn; Marzano, Francesco; Marzin, Antoine; Masetti, Lucia; Mashimo, Tetsuro; Mashinistov, Ruslan; Masik, Jiri; Maslennikov, Alexey; Massa, Ignazio; Massol, Nicolas; Mastrandrea, Paolo; Mastroberardino, Anna; Masubuchi, Tatsuya; Matricon, Pierre; Matsunaga, Hiroyuki; Matsushita, Takashi; Mättig, Peter; Mättig, Stefan; Mattmann, Johannes; Maurer, Julien; Maxfield, Stephen; Maximov, Dmitriy; Mazini, Rachid; Mazzaferro, Luca; Mc Goldrick, Garrin; Mc Kee, Shawn Patrick; McCarn, Allison; McCarthy, Robert; McCarthy, Tom; McCubbin, Norman; McFarlane, Kenneth; Mcfayden, Josh; Mchedlidze, Gvantsa; Mclaughlan, Tom; McMahon, Steve; McPherson, Robert; Meade, Andrew; Mechnich, Joerg; Medinnis, Michael; Meehan, Samuel; Mehlhase, Sascha; Mehta, Andrew; Meier, Karlheinz; Meineck, Christian; Meirose, Bernhard; Melachrinos, Constantinos; Mellado Garcia, Bruce Rafael; Meloni, Federico; Mengarelli, Alberto; Menke, Sven; Meoni, Evelin; Mercurio, Kevin Michael; Mergelmeyer, Sebastian; Meric, Nicolas; Mermod, Philippe; Merola, Leonardo; Meroni, Chiara; Merritt, Frank; Merritt, Hayes; Messina, Andrea; Metcalfe, Jessica; Mete, Alaettin Serhan; Meyer, Carsten; Meyer, Christopher; Meyer, Jean-Pierre; Meyer, Jochen; Middleton, Robin; Migas, Sylwia; Mijović, Liza; Mikenberg, Giora; Mikestikova, Marcela; Mikuž, Marko; Miller, David; Mills, Corrinne; Milov, Alexander; Milstead, David; Milstein, Dmitry; Minaenko, Andrey; Miñano Moya, Mercedes; Minashvili, Irakli; Mincer, Allen; Mindur, Bartosz; Mineev, Mikhail; Ming, Yao; Mir, Lluisa-Maria; Mirabelli, Giovanni; Mitani, Takashi; Mitrevski, Jovan; Mitsou, Vasiliki A; Mitsui, Shingo; Miucci, Antonio; Miyagawa, Paul; Mjörnmark, Jan-Ulf; Moa, Torbjoern; Mochizuki, Kazuya; Moeller, Victoria; Mohapatra, Soumya; Mohr, Wolfgang; Molander, Simon; Moles-Valls, Regina; Mönig, Klaus; Monini, Caterina; Monk, James; Monnier, Emmanuel; Montejo Berlingen, Javier; Monticelli, Fernando; Monzani, Simone; Moore, Roger; Moraes, Arthur; Morange, Nicolas; Morel, Julien; Moreno, Deywis; Moreno Llácer, María; Morettini, Paolo; Morgenstern, Marcus; Morii, Masahiro; Moritz, Sebastian; Morley, Anthony Keith; Mornacchi, Giuseppe; Morris, John; Morvaj, Ljiljana; Moser, Hans-Guenther; Mosidze, Maia; Moss, Josh; Mount, Richard; Mountricha, Eleni; Mouraviev, Sergei; Moyse, Edward; Muanza, Steve; Mudd, Richard; Mueller, Felix; Mueller, James; Mueller, Klemens; Mueller, Thibaut; Mueller, Timo; Muenstermann, Daniel; Munwes, Yonathan; Murillo Quijada, Javier Alberto; Murray, Bill; Musheghyan, Haykuhi; Musto, Elisa; Myagkov, Alexey; Myska, Miroslav; Nackenhorst, Olaf; Nadal, Jordi; Nagai, Koichi; Nagai, Ryo; Nagai, Yoshikazu; Nagano, Kunihiro; Nagarkar, Advait; Nagasaka, Yasushi; Nagel, Martin; Nairz, Armin Michael; Nakahama, Yu; Nakamura, Koji; Nakamura, Tomoaki; Nakano, Itsuo; Namasivayam, Harisankar; Nanava, Gizo; Narayan, Rohin; Nattermann, Till; Naumann, Thomas; Navarro, Gabriela; Nayyar, Ruchika; Neal, Homer; Nechaeva, Polina; Neep, Thomas James; Negri, Andrea; Negri, Guido; Negrini, Matteo; Nektarijevic, Snezana; Nelson, Andrew; Nelson, Timothy Knight; Nemecek, Stanislav; Nemethy, Peter; Nepomuceno, Andre Asevedo; Nessi, Marzio; Neubauer, Mark; Neumann, Manuel; Neves, Ricardo; Nevski, Pavel; Newcomer, Mitchel; Newman, Paul; Nguyen, Duong Hai; Nickerson, Richard; Nicolaidou, Rosy; Nicquevert, Bertrand; Nielsen, Jason; Nikiforou, Nikiforos; Nikiforov, Andriy; Nikolaenko, Vladimir; Nikolic-Audit, Irena; Nikolics, Katalin; Nikolopoulos, Konstantinos; Nilsson, Paul; Ninomiya, Yoichi; Nisati, Aleandro; Nisius, Richard; Nobe, Takuya; Nodulman, Lawrence; Nomachi, Masaharu; Nomidis, Ioannis; Norberg, Scarlet; Nordberg, Markus; Nowak, Sebastian; Nozaki, Mitsuaki; Nozka, Libor; Ntekas, Konstantinos; Nunes Hanninger, Guilherme; Nunnemann, Thomas; Nurse, Emily; Nuti, Francesco; O'Brien, Brendan Joseph; O'grady, Fionnbarr; O'Neil, Dugan; O'Shea, Val; Oakham, Gerald; Oberlack, Horst; Obermann, Theresa; Ocariz, Jose; Ochi, Atsuhiko; Ochoa, Ines; Oda, Susumu; Odaka, Shigeru; Ogren, Harold; Oh, Alexander; Oh, Seog; Ohm, Christian; Ohman, Henrik; Ohshima, Takayoshi; Okamura, Wataru; Okawa, Hideki; Okumura, Yasuyuki; Okuyama, Toyonobu; Olariu, Albert; Olchevski, Alexander; Olivares Pino, Sebastian Andres; Oliveira Damazio, Denis; Oliver Garcia, Elena; Olszewski, Andrzej; Olszowska, Jolanta; Onofre, António; Onyisi, Peter; Oram, Christopher; Oreglia, Mark; Oren, Yona; Orestano, Domizia; Orlando, Nicola; Oropeza Barrera, Cristina; Orr, Robert; Osculati, Bianca; Ospanov, Rustem; Otero y Garzon, Gustavo; Otono, Hidetoshi; Ouchrif, Mohamed; Ouellette, Eric; Ould-Saada, Farid; Ouraou, Ahmimed; Oussoren, Koen Pieter; Ouyang, Qun; Ovcharova, Ana; Owen, Mark; Ozcan, Veysi Erkcan; Ozturk, Nurcan; Pachal, Katherine; Pacheco Pages, Andres; Padilla Aranda, Cristobal; Pagáčová, Martina; Pagan Griso, Simone; Paganis, Efstathios; Pahl, Christoph; Paige, Frank; Pais, Preema; Pajchel, Katarina; Palacino, Gabriel; Palestini, Sandro; Pallin, Dominique; Palma, Alberto; Palmer, Jody; Pan, Yibin; Panagiotopoulou, Evgenia; Panduro Vazquez, William; Pani, Priscilla; Panikashvili, Natalia; Panitkin, Sergey; Pantea, Dan; Paolozzi, Lorenzo; Papadopoulou, Theodora; Papageorgiou, Konstantinos; Paramonov, Alexander; Paredes Hernandez, Daniela; Parker, Michael Andrew; Parodi, Fabrizio; Parsons, John; Parzefall, Ulrich; Pasqualucci, Enrico; Passaggio, Stefano; Passeri, Antonio; Pastore, Fernanda; Pastore, Francesca; Pásztor, Gabriella; Pataraia, Sophio; Patel, Nikhul; Pater, Joleen; Patricelli, Sergio; Pauly, Thilo; Pearce, James; Pedersen, Maiken; Pedraza Lopez, Sebastian; Pedro, Rute; Peleganchuk, Sergey; Pelikan, Daniel; Peng, Haiping; Penning, Bjoern; Penwell, John; Perepelitsa, Dennis; Perez Codina, Estel; Pérez García-Estañ, María Teresa; Perez Reale, Valeria; Perini, Laura; Pernegger, Heinz; Perrino, Roberto; Peschke, Richard; Peshekhonov, Vladimir; Peters, Krisztian; Peters, Yvonne; Petersen, Brian; Petersen, Jorgen; Petersen, Troels; Petit, Elisabeth; Petridis, Andreas; Petridou, Chariclia; Petrolo, Emilio; Petrucci, Fabrizio; Petteni, Michele; Pettersson, Nora Emilia; Pezoa, Raquel; Phillips, Peter William; Piacquadio, Giacinto; Pianori, Elisabetta; Picazio, Attilio; Piccaro, Elisa; Piccinini, Maurizio; Piegaia, Ricardo; Pieron, Jacek Piotr; Pignotti, David; Pilcher, James; Pilkington, Andrew; Pina, João Antonio; Pinamonti, Michele; Pinder, Alex; Pinfold, James; Pingel, Almut; Pinto, Belmiro; Pires, Sylvestre; Pitt, Michael; Pizio, Caterina; Pleier, Marc-Andre; Pleskot, Vojtech; Plotnikova, Elena; Plucinski, Pawel; Poddar, Sahill; Podlyski, Fabrice; Poettgen, Ruth; Poggioli, Luc; Pohl, David-leon; Pohl, Martin; Polesello, Giacomo; Policicchio, Antonio; Polifka, Richard; Polini, Alessandro; Pollard, Christopher Samuel; Polychronakos, Venetios; Pommès, Kathy; Pontecorvo, Ludovico; Pope, Bernard; Popeneciu, Gabriel Alexandru; Popovic, Dragan; Poppleton, Alan; Portell Bueso, Xavier; Pospelov, Guennady; Pospisil, Stanislav; Potamianos, Karolos; Potrap, Igor; Potter, Christina; Potter, Christopher; Poulard, Gilbert; Poveda, Joaquin; Pozdnyakov, Valery; Pralavorio, Pascal; Pranko, Aliaksandr; Prasad, Srivas; Pravahan, Rishiraj; Prell, Soeren; Price, Darren; Price, Joe; Price, Lawrence; Prieur, Damien; Primavera, Margherita; Proissl, Manuel; Prokofiev, Kirill; Prokoshin, Fedor; Protopapadaki, Eftychia-sofia; Protopopescu, Serban; Proudfoot, James; Przybycien, Mariusz; Przysiezniak, Helenka; Ptacek, Elizabeth; Pueschel, Elisa; Puldon, David; Purohit, Milind; Puzo, Patrick; Qian, Jianming; Qin, Gang; Qin, Yang; Quadt, Arnulf; Quarrie, David; Quayle, William; Quilty, Donnchadha; Qureshi, Anum; Radeka, Veljko; Radescu, Voica; Radhakrishnan, Sooraj Krishnan; Radloff, Peter; Rados, Pere; Ragusa, Francesco; Rahal, Ghita; Rajagopalan, Srinivasan; Rammensee, Michael; Randle-Conde, Aidan Sean; Rangel-Smith, Camila; Rao, Kanury; Rauscher, Felix; Rave, Tobias Christian; Ravenscroft, Thomas; Raymond, Michel; Read, Alexander Lincoln; Rebuzzi, Daniela; Redelbach, Andreas; Redlinger, George; Reece, Ryan; Reeves, Kendall; Rehnisch, Laura; Reinsch, Andreas; Reisin, Hernan; Relich, Matthew; Rembser, Christoph; Ren, Zhongliang; Renaud, Adrien; Rescigno, Marco; Resconi, Silvia; Resende, Bernardo; Rezanova, Olga; Reznicek, Pavel; Rezvani, Reyhaneh; Richter, Robert; Ridel, Melissa; Rieck, Patrick; Rijssenbeek, Michael; Rimoldi, Adele; Rinaldi, Lorenzo; Ritsch, Elmar; Riu, Imma; Rizatdinova, Flera; Rizvi, Eram; Robertson, Steven; Robichaud-Veronneau, Andree; Robinson, Dave; Robinson, James; Robson, Aidan; Roda, Chiara; Rodrigues, Luis; Roe, Shaun; Røhne, Ole; Rolli, Simona; Romaniouk, Anatoli; Romano, Marino; Romeo, Gaston; Romero Adam, Elena; Rompotis, Nikolaos; Roos, Lydia; Ros, Eduardo; Rosati, Stefano; Rosbach, Kilian; Rose, Matthew; Rosendahl, Peter Lundgaard; Rosenthal, Oliver; Rossetti, Valerio; Rossi, Elvira; Rossi, Leonardo Paolo; Rosten, Rachel; Rotaru, Marina; Roth, Itamar; Rothberg, Joseph; Rousseau, David; Royon, Christophe; Rozanov, Alexandre; Rozen, Yoram; Ruan, Xifeng; Rubbo, Francesco; Rubinskiy, Igor; Rud, Viacheslav; Rudolph, Christian; Rudolph, Matthew Scott; Rühr, Frederik; Ruiz-Martinez, Aranzazu; Rurikova, Zuzana; Rusakovich, Nikolai; Ruschke, Alexander; Rutherfoord, John; Ruthmann, Nils; Ryabov, Yury; Rybar, Martin; Rybkin, Grigori; Ryder, Nick; Saavedra, Aldo; Sacerdoti, Sabrina; Saddique, Asif; Sadeh, Iftach; Sadrozinski, Hartmut; Sadykov, Renat; Safai Tehrani, Francesco; Sakamoto, Hiroshi; Sakurai, Yuki; Salamanna, Giuseppe; Salamon, Andrea; Saleem, Muhammad; Salek, David; Sales De Bruin, Pedro Henrique; Salihagic, Denis; Salnikov, Andrei; Salt, José; Salvachua Ferrando, Belén; Salvatore, Daniela; Salvatore, Pasquale Fabrizio; Salvucci, Antonio; Salzburger, Andreas; Sampsonidis, Dimitrios; Sanchez, Arturo; Sánchez, Javier; Sanchez Martinez, Victoria; Sandaker, Heidi; Sandbach, Ruth Laura; Sander, Heinz Georg; Sanders, Michiel; Sandhoff, Marisa; Sandoval, Tanya; Sandoval, Carlos; Sandstroem, Rikard; Sankey, Dave; Sansoni, Andrea; Santoni, Claudio; Santonico, Rinaldo; Santos, Helena; Santoyo Castillo, Itzebelt; Sapp, Kevin; Sapronov, Andrey; Saraiva, João; Sarrazin, Bjorn; Sartisohn, Georg; Sasaki, Osamu; Sasaki, Yuichi; Satsounkevitch, Igor; Sauvage, Gilles; Sauvan, Emmanuel; Savard, Pierre; Savu, Dan Octavian; Sawyer, Craig; Sawyer, Lee; Saxon, James; Sbarra, Carla; Sbrizzi, Antonio; Scanlon, Tim; Scannicchio, Diana; Scarcella, Mark; Schaarschmidt, Jana; Schacht, Peter; Schaefer, Douglas; Schaefer, Ralph; Schaepe, Steffen; Schaetzel, Sebastian; Schäfer, Uli; Schaffer, Arthur; Schaile, Dorothee; Schamberger, R. Dean; Scharf, Veit; Schegelsky, Valery; Scheirich, Daniel; Schernau, Michael; Scherzer, Max; Schiavi, Carlo; Schieck, Jochen; Schillo, Christian; Schioppa, Marco; Schlenker, Stefan; Schmidt, Evelyn; Schmieden, Kristof; Schmitt, Christian; Schmitt, Christopher; Schmitt, Sebastian; Schneider, Basil; Schnellbach, Yan Jie; Schnoor, Ulrike; Schoeffel, Laurent; Schoening, Andre; Schoenrock, Bradley Daniel; Schorlemmer, Andre Lukas; Schott, Matthias; Schouten, Doug; Schovancova, Jaroslava; Schram, Malachi; Schramm, Steven; Schreyer, Manuel; Schroeder, Christian; Schuh, Natascha; Schultens, Martin Johannes; Schultz-Coulon, Hans-Christian; Schulz, Holger; Schumacher, Markus; Schumm, Bruce; Schune, Philippe; Schwartzman, Ariel; Schwegler, Philipp; Schwemling, Philippe; Schwienhorst, Reinhard; Schwindling, Jerome; Schwindt, Thomas; Schwoerer, Maud; Sciacca, Gianfranco; Scifo, Estelle; Sciolla, Gabriella; Scott, Bill; Scuri, Fabrizio; Scutti, Federico; Searcy, Jacob; Sedov, George; Sedykh, Evgeny; Seidel, Sally; Seiden, Abraham; Seifert, Frank; Seixas, José; Sekhniaidze, Givi; Sekula, Stephen; Selbach, Karoline Elfriede; Seliverstov, Dmitry; Sellers, Graham; Semprini-Cesari, Nicola; Serfon, Cedric; Serin, Laurent; Serkin, Leonid; Serre, Thomas; Seuster, Rolf; Severini, Horst; Sforza, Federico; Sfyrla, Anna; Shabalina, Elizaveta; Shamim, Mansoora; Shan, Lianyou; Shank, James; Shao, Qi Tao; Shapiro, Marjorie; Shatalov, Pavel; Shaw, Kate; Shaw, Rick; Sherwood, Peter; Shimizu, Shima; Shimmin, Chase Owen; Shimojima, Makoto; Shiyakova, Mariya; Shmeleva, Alevtina; Shochet, Mel; Short, Daniel; Shrestha, Suyog; Shulga, Evgeny; Shupe, Michael; Shushkevich, Stanislav; Sicho, Petr; Sidorov, Dmitri; Sidoti, Antonio; Siegert, Frank; Sijacki, Djordje; Silbert, Ohad; Silva, José; Silver, Yiftah; Silverstein, Daniel; Silverstein, Samuel; Simak, Vladislav; Simard, Olivier; Simic, Ljiljana; Simion, Stefan; Simioni, Eduard; Simmons, Brinick; Simoniello, Rosa; Simonyan, Margar; Sinervo, Pekka; Sinev, Nikolai; Sipica, Valentin; Siragusa, Giovanni; Sircar, Anirvan; Sisakyan, Alexei; Sivoklokov, Serguei; Sjölin, Jörgen; Sjursen, Therese; Skottowe, Hugh Philip; Skovpen, Kirill; Skubic, Patrick; Slater, Mark; Slavicek, Tomas; Sliwa, Krzysztof; Smakhtin, Vladimir; Smart, Ben; Smestad, Lillian; Smirnov, Sergei; Smirnov, Yury; Smirnova, Lidia; Smirnova, Oxana; Smizanska, Maria; Smolek, Karel; Snesarev, Andrei; Snidero, Giacomo; Snow, Joel; Snyder, Scott; Sobie, Randall; Socher, Felix; Sodomka, Jaromir; Soffer, Abner; Soh, Dart-yin; Solans, Carlos; Solar, Michael; Solc, Jaroslav; Soldatov, Evgeny; Soldevila, Urmila; Solfaroli Camillocci, Elena; Solodkov, Alexander; Solovyanov, Oleg; Solovyev, Victor; Sommer, Philip; Song, Hong Ye; Soni, Nitesh; Sood, Alexander; Sopczak, Andre; Sopko, Vit; Sopko, Bruno; Sorin, Veronica; Sosebee, Mark; Soualah, Rachik; Soueid, Paul; Soukharev, Andrey; South, David; Spagnolo, Stefania; Spanò, Francesco; Spearman, William Robert; Spighi, Roberto; Spigo, Giancarlo; Spousta, Martin; Spreitzer, Teresa; Spurlock, Barry; St Denis, Richard Dante; Staerz, Steffen; Stahlman, Jonathan; Stamen, Rainer; Stanecka, Ewa; Stanek, Robert; Stanescu, Cristian; Stanescu-Bellu, Madalina; Stanitzki, Marcel Michael; Stapnes, Steinar; Starchenko, Evgeny; Stark, Jan; Staroba, Pavel; Starovoitov, Pavel; Staszewski, Rafal; Stavina, Pavel; Steele, Genevieve; Steinberg, Peter; Stekl, Ivan; Stelzer, Bernd; Stelzer, Harald Joerg; Stelzer-Chilton, Oliver; Stenzel, Hasko; Stern, Sebastian; Stewart, Graeme; Stillings, Jan Andre; Stockton, Mark; Stoebe, Michael; Stoicea, Gabriel; Stolte, Philipp; Stonjek, Stefan; Stradling, Alden; Straessner, Arno; Stramaglia, Maria Elena; Strandberg, Jonas; Strandberg, Sara; Strandlie, Are; Strauss, Emanuel; Strauss, Michael; Strizenec, Pavol; Ströhmer, Raimund; Strom, David; Stroynowski, Ryszard; Stucci, Stefania Antonia; Stugu, Bjarne; Styles, Nicholas Adam; Su, Dong; Su, Jun; Subramania, Halasya Siva; Subramaniam, Rajivalochan; Succurro, Antonella; Sugaya, Yorihito; Suhr, Chad; Suk, Michal; Sulin, Vladimir; Sultansoy, Saleh; Sumida, Toshi; Sun, Xiaohu; Sundermann, Jan Erik; Suruliz, Kerim; Susinno, Giancarlo; Sutton, Mark; Suzuki, Yu; Svatos, Michal; Swedish, Stephen; Swiatlowski, Maximilian; Sykora, Ivan; Sykora, Tomas; Ta, Duc; Tackmann, Kerstin; Taenzer, Joe; Taffard, Anyes; Tafirout, Reda; Taiblum, Nimrod; Takahashi, Yuta; Takai, Helio; Takashima, Ryuichi; Takeda, Hiroshi; Takeshita, Tohru; Takubo, Yosuke; Talby, Mossadek; Talyshev, Alexey; Tam, Jason; Tamsett, Matthew; Tan, Kong Guan; Tanaka, Junichi; Tanaka, Reisaburo; Tanaka, Satoshi; Tanaka, Shuji; Tanasijczuk, Andres Jorge; Tani, Kazutoshi; Tannoury, Nancy; Tapprogge, Stefan; Tarem, Shlomit; Tarrade, Fabien; Tartarelli, Giuseppe Francesco; Tas, Petr; Tasevsky, Marek; Tashiro, Takuya; Tassi, Enrico; Tavares Delgado, Ademar; Tayalati, Yahya; Taylor, Frank; Taylor, Geoffrey; Taylor, Wendy; Teischinger, Florian Alfred; Teixeira Dias Castanheira, Matilde; Teixeira-Dias, Pedro; Temming, Kim Katrin; Ten Kate, Herman; Teng, Ping-Kun; Terada, Susumu; Terashi, Koji; Terron, Juan; Terzo, Stefano; Testa, Marianna; Teuscher, Richard; Therhaag, Jan; Theveneaux-Pelzer, Timothée; Thoma, Sascha; Thomas, Juergen; Thomas-Wilsker, Joshuha; Thompson, Emily; Thompson, Paul; Thompson, Peter; Thompson, Stan; Thomsen, Lotte Ansgaard; Thomson, Evelyn; Thomson, Mark; Thong, Wai Meng; Thun, Rudolf; Tian, Feng; Tibbetts, Mark James; Tikhomirov, Vladimir; Tikhonov, Yury; Timoshenko, Sergey; Tiouchichine, Elodie; Tipton, Paul; Tisserant, Sylvain; Todorov, Theodore; Todorova-Nova, Sharka; Toggerson, Brokk; Tojo, Junji; Tokár, Stanislav; Tokushuku, Katsuo; Tollefson, Kirsten; Tomlinson, Lee; Tomoto, Makoto; Tompkins, Lauren; Toms, Konstantin; Topilin, Nikolai; Torrence, Eric; Torres, Heberth; Torró Pastor, Emma; Toth, Jozsef; Touchard, Francois; Tovey, Daniel; Tran, Huong Lan; Trefzger, Thomas; Tremblet, Louis; Tricoli, Alessandro; Trigger, Isabel Marian; Trincaz-Duvoid, Sophie; Tripiana, Martin; Triplett, Nathan; Trischuk, William; Trocmé, Benjamin; Troncon, Clara; Trottier-McDonald, Michel; Trovatelli, Monica; True, Patrick; Trzebinski, Maciej; Trzupek, Adam; Tsarouchas, Charilaos; Tseng, Jeffrey; Tsiareshka, Pavel; Tsionou, Dimitra; Tsipolitis, Georgios; Tsirintanis, Nikolaos; Tsiskaridze, Shota; Tsiskaridze, Vakhtang; Tskhadadze, Edisher; Tsukerman, Ilya; Tsulaia, Vakhtang; Tsuno, Soshi; Tsybychev, Dmitri; Tudorache, Alexandra; Tudorache, Valentina; Tuna, Alexander Naip; Tupputi, Salvatore; Turchikhin, Semen; Turecek, Daniel; Turk Cakir, Ilkay; Turra, Ruggero; Tuts, Michael; Tykhonov, Andrii; Tylmad, Maja; Tyndel, Mike; Uchida, Kirika; Ueda, Ikuo; Ueno, Ryuichi; Ughetto, Michael; Ugland, Maren; Uhlenbrock, Mathias; Ukegawa, Fumihiko; Unal, Guillaume; Undrus, Alexander; Unel, Gokhan; Ungaro, Francesca; Unno, Yoshinobu; Urbaniec, Dustin; Urquijo, Phillip; Usai, Giulio; Usanova, Anna; Vacavant, Laurent; Vacek, Vaclav; Vachon, Brigitte; Valencic, Nika; Valentinetti, Sara; Valero, Alberto; Valery, Loic; Valkar, Stefan; Valladolid Gallego, Eva; Vallecorsa, Sofia; Valls Ferrer, Juan Antonio; Van Berg, Richard; Van Der Deijl, Pieter; van der Geer, Rogier; van der Graaf, Harry; Van Der Leeuw, Robin; van der Ster, Daniel; van Eldik, Niels; van Gemmeren, Peter; Van Nieuwkoop, Jacobus; van Vulpen, Ivo; van Woerden, Marius Cornelis; Vanadia, Marco; Vandelli, Wainer; Vanguri, Rami; Vaniachine, Alexandre; Vankov, Peter; Vannucci, Francois; Vardanyan, Gagik; Vari, Riccardo; Varnes, Erich; Varol, Tulin; Varouchas, Dimitris; Vartapetian, Armen; Varvell, Kevin; Vazeille, Francois; Vazquez Schroeder, Tamara; Veatch, Jason; Veloso, Filipe; Veneziano, Stefano; Ventura, Andrea; Ventura, Daniel; Venturi, Manuela; Venturi, Nicola; Venturini, Alessio; Vercesi, Valerio; Verducci, Monica; Verkerke, Wouter; Vermeulen, Jos; Vest, Anja; Vetterli, Michel; Viazlo, Oleksandr; Vichou, Irene; Vickey, Trevor; Vickey Boeriu, Oana Elena; Viehhauser, Georg; Viel, Simon; Vigne, Ralph; Villa, Mauro; Villaplana Perez, Miguel; Vilucchi, Elisabetta; Vincter, Manuella; Vinogradov, Vladimir; Virzi, Joseph; Vivarelli, Iacopo; Vives Vaque, Francesc; Vlachos, Sotirios; Vladoiu, Dan; Vlasak, Michal; Vogel, Adrian; Vokac, Petr; Volpi, Guido; Volpi, Matteo; von der Schmitt, Hans; von Radziewski, Holger; von Toerne, Eckhard; Vorobel, Vit; Vorobev, Konstantin; Vos, Marcel; Voss, Rudiger; Vossebeld, Joost; Vranjes, Nenad; Vranjes Milosavljevic, Marija; Vrba, Vaclav; Vreeswijk, Marcel; Vu Anh, Tuan; Vuillermet, Raphael; Vukotic, Ilija; Vykydal, Zdenek; Wagner, Wolfgang; Wagner, Peter; Wahrmund, Sebastian; Wakabayashi, Jun; Walder, James; Walker, Rodney; Walkowiak, Wolfgang; Wall, Richard; Waller, Peter; Walsh, Brian; Wang, Chao; Wang, Chiho; Wang, Fuquan; Wang, Haichen; Wang, Hulin; Wang, Jike; Wang, Jin; Wang, Kuhan; Wang, Rui; Wang, Song-Ming; Wang, Tan; Wang, Xiaoxiao; Wanotayaroj, Chaowaroj; Warburton, Andreas; Ward, Patricia; Wardrope, David Robert; Warren, Matthew; Warsinsky, Markus; Washbrook, Andrew; Wasicki, Christoph; Watanabe, Ippei; Watkins, Peter; Watson, Alan; Watson, Ian; Watson, Miriam; Watts, Gordon; Watts, Stephen; Waugh, Ben; Webb, Samuel; Weber, Michele; Weber, Stefan Wolf; Webster, Jordan S; Weidberg, Anthony; Weigell, Philipp; Weinert, Benjamin; Weingarten, Jens; Weiser, Christian; Weits, Hartger; Wells, Phillippa; Wenaus, Torre; Wendland, Dennis; Weng, Zhili; Wengler, Thorsten; Wenig, Siegfried; Wermes, Norbert; Werner, Matthias; Werner, Per; Wessels, Martin; Wetter, Jeffrey; Whalen, Kathleen; White, Andrew; White, Martin; White, Ryan; White, Sebastian; Whiteson, Daniel; Wicke, Daniel; Wickens, Fred; Wiedenmann, Werner; Wielers, Monika; Wienemann, Peter; Wiglesworth, Craig; Wiik-Fuchs, Liv Antje Mari; Wijeratne, Peter Alexander; Wildauer, Andreas; Wildt, Martin Andre; Wilkens, Henric George; Will, Jonas Zacharias; Williams, Hugh; Williams, Sarah; Willis, Christopher; Willocq, Stephane; Wilson, John; Wilson, Alan; Wingerter-Seez, Isabelle; Winklmeier, Frank; Wittgen, Matthias; Wittig, Tobias; Wittkowski, Josephine; Wollstadt, Simon Jakob; Wolter, Marcin Wladyslaw; Wolters, Helmut; Wosiek, Barbara; Wotschack, Jorg; Woudstra, Martin; Wozniak, Krzysztof; Wright, Michael; Wu, Mengqing; Wu, Sau Lan; Wu, Xin; Wu, Yusheng; Wulf, Evan; Wyatt, Terry Richard; Wynne, Benjamin; Xella, Stefania; Xiao, Meng; Xu, Da; Xu, Lailin; Yabsley, Bruce; Yacoob, Sahal; Yamada, Miho; Yamaguchi, Hiroshi; Yamaguchi, Yohei; Yamamoto, Akira; Yamamoto, Kyoko; Yamamoto, Shimpei; Yamamura, Taiki; Yamanaka, Takashi; Yamauchi, Katsuya; Yamazaki, Yuji; Yan, Zhen; Yang, Haijun; Yang, Hongtao; Yang, Un-Ki; Yang, Yi; Yanush, Serguei; Yao, Liwen; Yao, Weiming; Yasu, Yoshiji; Yatsenko, Elena; Yau Wong, Kaven Henry; Ye, Jingbo; Ye, Shuwei; Yen, Andy L; Yildirim, Eda; Yilmaz, Metin; Yoosoofmiya, Reza; Yorita, Kohei; Yoshida, Rikutaro; Yoshihara, Keisuke; Young, Charles; Young, Christopher John; Youssef, Saul; Yu, David Ren-Hwa; Yu, Jaehoon; Yu, Jiaming; Yu, Jie; Yuan, Li; Yurkewicz, Adam; Zabinski, Bartlomiej; Zaidan, Remi; Zaitsev, Alexander; Zaman, Aungshuman; Zambito, Stefano; Zanello, Lucia; Zanzi, Daniele; Zaytsev, Alexander; Zeitnitz, Christian; Zeman, Martin; Zemla, Andrzej; Zengel, Keith; Zenin, Oleg; Ženiš, Tibor; Zerwas, Dirk; Zevi della Porta, Giovanni; Zhang, Dongliang; Zhang, Fangzhou; Zhang, Huaqiao; Zhang, Jinlong; Zhang, Lei; Zhang, Xueyao; Zhang, Zhiqing; Zhao, Zhengguo; Zhemchugov, Alexey; Zhong, Jiahang; Zhou, Bing; Zhou, Lei; Zhou, Ning; Zhu, Cheng Guang; Zhu, Hongbo; Zhu, Junjie; Zhu, Yingchun; Zhuang, Xuai; Zibell, Andre; Zieminska, Daria; Zimine, Nikolai; Zimmermann, Christoph; Zimmermann, Robert; Zimmermann, Simone; Zimmermann, Stephanie; Zinonos, Zinonas; Ziolkowski, Michael; Zobernig, Georg; Zoccoli, Antonio; zur Nedden, Martin; Zurzolo, Giovanni; Zutshi, Vishnu; Zwalinski, Lukasz

    The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

  13. 75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

    Science.gov (United States)

    2010-02-04

    ... COMMISSION In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice... importation, and sale within the United States after importation of certain semiconductor integrated circuits... infringement certain LSI integrated circuits, as well as certain Seagate hard disk drives that contain the...

  14. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  15. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2001-01-01

    This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.

  16. Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

    CERN Document Server

    INSPIRE-00407830; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid M.; Jones, T; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

    2016-05-24

    The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

  17. Detectors in Extreme Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Blaj, G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Carini, G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Carron, S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Haller, G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Hart, P. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Hasi, J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Herrmann, S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Kenney, C. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Segal, J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tomada, A. [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-06

    Free Electron Lasers opened a new window on imaging the motion of atoms and molecules. At SLAC, FEL experiments are performed at LCLS using 120Hz pulses with 1012 - 1013 photons in 10 femtoseconds (billions of times brighter than the most powerful synchrotrons). This extreme detection environment raises unique challenges, from obvious to surprising. Radiation damage is a constant threat due to accidental exposure to insufficiently attenuated beam, focused beam and formation of ice crystals reflecting the beam onto the detector. Often high power optical lasers are also used (e.g., 25TW), increasing the risk of damage or impeding data acquisition through electromagnetic pulses (EMP). The sample can contaminate the detector surface or even produce shrapnel damage. Some experiments require ultra high vacuum (UHV) with strict design, surface contamination and cooling requirements - also for detectors. The setup is often changed between or during experiments with short turnaround times, risking mechanical and ESD damage, requiring work planning, training of operators and sometimes continuous participation of the LCLS Detector Group in the experiments. The detectors used most often at LCLS are CSPAD cameras for hard x-rays and pnCCDs for soft x-rays.

  18. Silicon Pixel Detectors for Synchrotron Applications

    CERN Document Server

    Stewart, Graeme Douglas

    Recent advances in particle accelerators have increased the demands being placed on detectors. Novel detector designs are being implemented in many different areas including, for example, high luminosity experiments at the LHC or at next generation synchrotrons. The purpose of this thesis was to characterise some of these novel detectors. The first of the new detector types is called a 3D detector. This design was first proposed by Parker, Kenney and Segal (1997). In this design, doped electrodes are created that extend through the silicon substrate. When compared to a traditional photodiode with electrodes on the opposing surfaces, the 3D design can combine a reasonable detector thickness with a small electrode spacing resulting in fast charge collection and limited charge sharing. The small electrode spacing leads to the detectors having lower depletion voltages. This, combined with the fast collection time, makes 3D detectors a candidate for radiation hard applications. These applications include the upgra...

  19. Complementary Barrier Infrared Detector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Hill, Cory J.; Gunapala, Sarath D.

    2009-01-01

    The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified

  20. Gaseous Detectors: Charged Particle Detectors - Particle Detectors and Detector Systems

    CERN Document Server

    Hilke, H J

    2011-01-01

    Gaseous Detectors in 'Charged Particle Detectors - Particle Detectors and Detector Systems', part of 'Landolt-Börnstein - Group I Elementary Particles, Nuclei and Atoms: Numerical Data and Functional Relationships in Science and Technology, Volume 21B1: Detectors for Particles and Radiation. Part 1: Principles and Methods'. This document is part of Part 1 'Principles and Methods' of Subvolume B 'Detectors for Particles and Radiation' of Volume 21 'Elementary Particles' of Landolt-Börnstein - Group I 'Elementary Particles, Nuclei and Atoms'. It contains the Subsection '3.1.2 Gaseous Detectors' of Section '3.1 Charged Particle Detectors' of Chapter '3 Particle Detectors and Detector Systems' with the content: 3.1.2 Gaseous Detectors 3.1.2.1 Introduction 3.1.2.2 Basic Processes 3.1.2.2.1 Gas ionization by charged particles 3.1.2.2.1.1 Primary clusters 3.1.2.2.1.2 Cluster size distribution 3.1.2.2.1.3 Total number of ion pairs 3.1.2.2.1.4 Dependence of energy deposit on particle velocity 3.1.2.2.2 Transport of...

  1. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  2. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  3. High energy semiconductor switch

    Science.gov (United States)

    Risberg, R. L.

    1989-02-01

    The objective was a controller for electric motors. By operating standard Nema B induction motors at variable speed a great deal of energy is saved. This is especially true in pumping and air conditioning applications. To allow wider use of variable speed AC drives, and to provide improved performance, a better semiconductor switch was sought. This was termed the High Energy Semiconductor Switch.

  4. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  5. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  6. Thermodynamic hardness and the maximum hardness principle

    Science.gov (United States)

    Franco-Pérez, Marco; Gázquez, José L.; Ayers, Paul W.; Vela, Alberto

    2017-08-01

    An alternative definition of hardness (called the thermodynamic hardness) within the grand canonical ensemble formalism is proposed in terms of the partial derivative of the electronic chemical potential with respect to the thermodynamic chemical potential of the reservoir, keeping the temperature and the external potential constant. This temperature dependent definition may be interpreted as a measure of the propensity of a system to go through a charge transfer process when it interacts with other species, and thus it keeps the philosophy of the original definition. When the derivative is expressed in terms of the three-state ensemble model, in the regime of low temperatures and up to temperatures of chemical interest, one finds that for zero fractional charge, the thermodynamic hardness is proportional to T-1(I -A ) , where I is the first ionization potential, A is the electron affinity, and T is the temperature. However, the thermodynamic hardness is nearly zero when the fractional charge is different from zero. Thus, through the present definition, one avoids the presence of the Dirac delta function. We show that the chemical hardness defined in this way provides meaningful and discernible information about the hardness properties of a chemical species exhibiting integer or a fractional average number of electrons, and this analysis allowed us to establish a link between the maximum possible value of the hardness here defined, with the minimum softness principle, showing that both principles are related to minimum fractional charge and maximum stability conditions.

  7. Rad Hard Active Media For Calorimeters

    CERN Document Server

    Norbeck, E; Möller, A; Onel, Y

    2006-01-01

    Zero-degree calorimeters have limited space and extreme levels of radiation. A simple, low cost, radiation hard design uses tungstenmetal as the absorber and a suitable liquid as the ˇCerenkov radiator. In other applications a PPAC (Parallel Plate Avalanche Counter) operatingwith a suitable atmosphericpressure gas is an attractive active material for a calorimeter. It can be made radiation hard and has sufficient gain in the gas that no electronic components are needed near the detector. It works well even with the highest concentration of shower particles. For this pressure range, R134A (used in auto air conditioners) has many desirable features.

  8. The AlGaAs light emitting particle detector

    CERN Document Server

    Pozela, J; Silenas, A; Juciene, V; Dapkus, L; Jasutis, V; Tamulaitis, G; Zukauskas, A; Bendorius, R A

    1999-01-01

    An AlGaAs light emitting particle detector was fabricated and investigated experimentally. Light emitting semiconductor Al sub x Ga sub 1 sub - sub x As layers with graded-gap energy band structure were grown, and luminescence spectra were investigated. A light emitting X-ray detector was also fabricated. (author)

  9. Fabrication of Superconducting Detectors for Studying the Universe

    Science.gov (United States)

    Brown, Ari-David

    2012-01-01

    Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

  10. Optimized differential energy loss estimation for tracker detectors

    CERN Document Server

    Sikler, Ferenc

    2012-01-01

    The estimation of differential energy loss for charged particles in tracker detectors is studied. The robust truncated mean method can be generalized to the linear combination of the energy deposit measurements. The optimized weights in case of arithmetic and geometric means are obtained using a detailed simulation. The results show better particle separation power for both semiconductor and gaseous detectors.

  11. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  12. Development and application of cryogenic radiometry with hard X-rays; Entwicklung und Anwendung der Kryoradiometrie mit harter Roentgenstrahlung

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, Martin

    2008-06-06

    To establish cryogenic radiometry with hard X-ray radiation for photon energies of up to 60 keV, a novel type of cavity absorber had to be developed for the cryogenic radiometer SYRES I, which is deployed by the Physikalisch-Technische Bundesanstalt (PTB) as primary standard detector at the electron storage ring BESSY II. This new type of cavity absorber allows for the complete absorption of hard X-ray radiation in combination with an appropriate sensitivity and an adequate time constant for the measurement of synchrotron radiation at BESSY II. As the process of fabrication of different types of absorbers is very time-consuming, the interaction of hard X-ray radiation with different absorber materials and geometries was studied intensively by using the Monte Carlo simulation code Geant4. The accuracy of the simulations was verified comparing them to scattering experiments performed at a wavelength shifter beamline at BESSY II with a calibrated energy dispersive detector. It was shown that Geant4 describes the photo-effect, including fluorescence as well as Compton- and Rayleigh scattering, with high accuracy. The simulations and experiments resulted in a cavity absorber with a gold base 550 {mu}m in thickness and a cylindrical shell made of copper 90 {mu}m in thickness to reduce losses caused by fluorescence and scattered radiation. Monochromatized synchrotron radiation of high spectral purity was then used to calibrate semiconductor photodiodes, which can be used as compact and inexpensive secondary standard detectors, against a cryogenic radiometer, covering the entire photon energy range of three beamlines from 50 eV to 60 keV with relative uncertainties of less than 0.5 %. Furthermore the spatial homogeneity of the spectral responsivity, the transmittance and the linearity of the photodiodes was investigated. Through a direct comparison of the free-air ionization chamber PK100, a primary detector standard of PTB used in dosimetry, and the cryogenic radiometer

  13. Solid-State Neutron Detector Device

    Science.gov (United States)

    Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

    2017-01-01

    The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

  14. Photon detector configured to employ the Gunn effect and method of use

    Science.gov (United States)

    Cich, Michael J

    2015-03-17

    Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

  15. Integrability detectors

    Indian Academy of Sciences (India)

    2015-10-29

    Oct 29, 2015 ... Abstract. In this short review, we present some applications and historical facts about the integrability detectors: Painlevé analysis, singularity confinement and algebraic entropy.

  16. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  17. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  18. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  19. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  20. Characterization of Czochralski Silicon Detectors

    CERN Document Server

    Luukka, Panja-Riina

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alternative for future highenergy physics experiments. In the large hadron collider (LHC), the RH of the detectorsis a critical issue due to the high luminosity (1034 cm-2s-1) corresponding to the expectedtotal fluencies of fast hadrons above 1015 cm-2. This RH improvement is important sinceradiation damage in the detector bulk material reduces the detector performance andbecause some of the devices produced from standard detector-grade silicon, e.g. FZsilicon with negligible oxygen concentration, might not survive the plann...

  1. Investigation of silicon PIN-detector for laser pulse detection

    OpenAIRE

    Chau, Sam

    2004-01-01

    This report has been written at SAAB Bofors Dynamics (SBD) AB in Gothenburg at the department of optronic systems. In military observation operations, a target to hit is chosen by illumination of a laser designator. From the targetpoint laser radiation is reflected on a detector that helps identify the target. The detector is a semiconductor PIN-type that has been investigated in a laboratory environment together with a specially designed laser source. The detector is a photodiode and using p...

  2. Next decade in infrared detectors

    Science.gov (United States)

    Rogalski, A.

    2017-10-01

    Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

  3. Optical Detectors

    Science.gov (United States)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  4. Vapor Detector

    Science.gov (United States)

    Waddell, H. M.; Garrard, G. C.; Houston, D. W.

    1982-01-01

    Detector eliminates need for removing covers to take samples. Detector is canister consisting of screw-in base and clear plastic tube that contains two colors of silica gel. Monoethylhydrazine and nitrogen tetroxide vapors are visually monitored with canister containing color-changing gels.

  5. 18th International Workshop on Radiation Imaging Detectors

    CERN Document Server

    2016-01-01

    The International Workshops on Radiation Imaging Detectors are held yearly and provide an international forum for discussing current research and developments in the area of position sensitive detectors for radiation imaging, including semiconductor detectors, gas and scintillator-based detectors. Topics include processing and characterization of detector materials, hybridization and interconnect technologies, design of counting or integrating electronics, readout and data acquisition systems, and applications in various scientific and industrial fields. The workshop will have plenary sessions with invited and contributed papers presented orally and in poster sessions. The invited talks will be chosen to review recent advances in different areas covered in the workshop.

  6. Antimonide type-II superlattice barrier infrared detectors

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Höglund, Linda; Keo, Sam A.; Rafol, B., , Sir; Hill, Cory J.; Fisher, Anita M.; Luong, Edward M.; Nguyen, Jean; Liu, John K.; Mumolo, Jason M.; Pepper, Brian J.; Gunapala, Sarath D.

    2017-02-01

    We provide a brief overview of recent progress in III-V semiconductor infrared photodetectors resulting from advances in infrared detector materials, including type-II superlattices (T2SL) and InAsSb alloy, and the unipolar detector architecture. We summarize T2SL unipolar barrier infrared detector and focal plane array development at the NASA Jet Propulsion Laboratory in support of the Vital Infrared Sensor Technology Acceleration (VISTA) Program. We also comment on the connection of T2SL barrier infrared detector to MCT infrared detectors.

  7. Alpha particle response study of polycrstalline diamond radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

    2016-05-23

    Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

  8. Alignement strategy for the Inner Detector of ATLAS

    CERN Document Server

    Brückman de Renstrom, P

    2007-01-01

    002704675 ATLAS is a general-purpose spectrometer in preparation for taking data at the Large Hadron Collider at CERN. It will start operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. The Inner Detector consists of two silicon subsystems: a Pixel Detector and a Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices high accuracy alignment is required. In this report the strategy to align the sub-detectors of the ATLAS Inner Detector is reviewed, together with the current status of preparation. Both track-based and hardware alignment methods are presented.

  9. The ATLAS semiconductor tracker: operations and performance

    CERN Document Server

    D'Auria, S; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar {it p}-in-{it n} technology. The signals are processed in the front-end ASICS ABCD3TA, working in binary readout mode. Data is transferred to the off-detector readout electronics via optical fibres. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current results from the successful operation of the SCT Detector at the LHC and its status af...

  10. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  11. Defects in semiconductor nanostructures

    Science.gov (United States)

    Singh, Vijay A.; Harbola, Manoj K.; Pathak, Praveen

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  12. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  13. Electrowetting on a semiconductor

    OpenAIRE

    Arscott, Steve; Gaudet, Matthieu

    2012-01-01

    We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulat...

  14. Gaseous Detectors

    Science.gov (United States)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.

  15. Status of radiation detector and neutron monitor technology

    CERN Document Server

    Kim, Y K; Ha, J H; Han, S H; Hong, S B; Hwang, I K; Lee, W G; Moon, B S; Park, S H; Song, M H

    2002-01-01

    In this report, we describe the current states of the radiation detection technology, detectors for industrial application, and neutron monitors. We also survey the new technologies being applied to this field. The method to detect radiation is the measurement of the observable secondary effect from the interaction between incident radiation and detector material, such as ionization, excitation, fluorescence, and chemical reaction. The radiation detectors can be categorized into gas detectors, scintillation detectors, and semiconductor detectors according to major effects and main applications. This report contains the current status and operational principles of these detectors. The application fields of radiation detectors are industrial measurement system, in-core neutron monitor, medical radiation diagnostic device, nondestructive inspection device, environmental radiation monitoring, cosmic-ray measurement, security system, fundamental science experiment, and radiation measurement standardization. The st...

  16. DUMAND detector

    CERN Multimedia

    This object is one of the 256 other detectors of the DUMAND (Deep Underwater Muon And Neutrino Detection) experiment. The goal of the experiment was the construction of the first deep ocean high energy neutrino detector, to be placed at 4800 m depth in the Pacific Ocean off Keahole Point on the Big Island of Hawaii. A few years ago, a European conference with Cosmic experiments was organized at CERN as they were projects like DUMAND in Hawaii. Along with the conference, a temporary exhibition was organised as well. It was a collaboration of institutions from Germany, Japan, Switzerland and the U.S.A. CERN had borrowed equipment and objects from different institutes around the world, including this detector of the DUMAND experiment. Most of the equipment were sent back to the institutes, however this detector sphere was offered to a CERN member of the personnel.

  17. MS Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Koppenaal, David W.; Barinaga, Charles J.; Denton, M Bonner B.; Sperline, Roger P.; Hieftje, Gary M.; Schilling, G. D.; Andrade, Francisco J.; Barnes IV., James H.

    2005-11-01

    Good eyesight is often taken for granted, a situation that everyone appreciates once vision begins to fade with age. New eyeglasses or contact lenses are traditional ways to improve vision, but recent new technology, i.e. LASIK laser eye surgery, provides a new and exciting means for marked vision restoration and improvement. In mass spectrometry, detectors are the 'eyes' of the MS instrument. These 'eyes' have also been taken for granted. New detectors and new technologies are likewise needed to correct, improve, and extend ion detection and hence, our 'chemical vision'. The purpose of this report is to review and assess current MS detector technology and to provide a glimpse towards future detector technologies. It is hoped that the report will also serve to motivate interest, prompt ideas, and inspire new visions for ion detection research.

  18. Vacuum-Ultraviolet Photovoltaic Detector.

    Science.gov (United States)

    Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

    2018-01-23

    Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

  19. Detectors course

    CERN Multimedia

    CERN. Geneva HR-RFA

    2006-01-01

    This lecture series on detectors, will give a general, although somewhat compressed, introduction to particle interaction with matter and magnetic fields. Tracking detectors and calorimeters will also be covered as well as particle identification systems. The lectures will start out with a short review of particle interaction with fields and then we will discuss particle detection. At the end some common composite detection systems will be described.

  20. Hardness Tester for Polyur

    Science.gov (United States)

    Hauser, D. L.; Buras, D. F.; Corbin, J. M.

    1987-01-01

    Rubber-hardness tester modified for use on rigid polyurethane foam. Provides objective basis for evaluation of improvements in foam manufacturing and inspection. Typical acceptance criterion requires minimum hardness reading of 80 on modified tester. With adequate correlation tests, modified tester used to measure indirectly tensile and compressive strengths of foam.

  1. Comprehensive hard materials

    CERN Document Server

    2014-01-01

    Comprehensive Hard Materials deals with the production, uses and properties of the carbides, nitrides and borides of these metals and those of titanium, as well as tools of ceramics, the superhard boron nitrides and diamond and related compounds. Articles include the technologies of powder production (including their precursor materials), milling, granulation, cold and hot compaction, sintering, hot isostatic pressing, hot-pressing, injection moulding, as well as on the coating technologies for refractory metals, hard metals and hard materials. The characterization, testing, quality assurance and applications are also covered. Comprehensive Hard Materials provides meaningful insights on materials at the leading edge of technology. It aids continued research and development of these materials and as such it is a critical information resource to academics and industry professionals facing the technological challenges of the future. Hard materials operate at the leading edge of technology, and continued res...

  2. Capacitor-type micrometeoroid detectors

    Science.gov (United States)

    Wortman, J. J.; Griffis, D. P.; Bryan, S. R.; Kinard, W.

    1986-01-01

    The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

  3. Caliste 64: detection unit of a spectro imager array for a hard x-ray space telescope

    Science.gov (United States)

    Limousin, O.; Meuris, A.; Lugiez, F.; Gevin, Olivier; Pinsard, F.; Blondel, C.; Le Mer, I.; Delagnes, E.; Vassal, M. C.; Soufflet, F.; Bocage, R.; Penquer, A.; Billot, M.

    2017-11-01

    In the frame of the hard X-ray Simbol-X observatory, a joint CNES-ASI space mission to be flown in 2014, a prototype of miniature Cd(Zn)Te camera equipped with 64 pixels has been designed. The device, called Caliste 64, is a spectro-imager with high resolution event timetagging capability. Caliste 64 integrates a Cd(Zn)Te semiconductor detector with segmented electrode and its front-end electronics made of 64 independent analog readout channels. This 1 × 1 × 2 cm3 camera, able to detect photons in the range from 2 keV up to 250 keV, is an elementary detection unit juxtaposable on its four sides. Consequently, large detector array can be made assembling a mosaic of Caliste 64 units. Electronics readout module is achieved by stacking four IDeF-X V1.1 ASICs, perpendicular to the detection plane. We achieved good noise performances, with a mean Equivalent Noise Charge of 65 electrons rms over the 64 channels. For the first prototypes, we chose Pt//CdTe//Al/Ti/Au Schottky detectors because of their very low dark current and excellent spectroscopic performances. Recently a Caliste 64 prototype has been also equipped with a 2 mm thick Au//CdZnTe//Au detector. This paper presents the performances of these four prototypes and demonstrates spectral performances better than 1 keV fwhm at 59.54 keV when the samples are moderately cooled down to -10°C.

  4. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  5. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  6. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  7. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  8. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  9. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  10. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  11. Growth of photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. (Bell Communications Research, Red Bank, NJ (United States)); Stringfellow, G.B. (Univ. of Utah, Salt Lake City (United States)); Greene, J.E. (Univ. of Illinois, Urbana (United States))

    1993-01-01

    We assess the opportunities for improving the quality and lowering the cost of thin crystalline semiconductor films for photovoltaics. We find that novel growth and processing methods can lower the cost of crystalline semiconductor films to satisfy the economic conditions for a major expansion of the photovoltaic industry. The research requirements are in the areas of novel precursors for vapor phase growth, atomic layer epitaxy for unprecedented control, and the requirement for novel in situ and ex situ probes to ensure that the new growth methods are producing the utmost in photovoltaic material quality. 42 refs.

  12. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  13. Optical Link of the Atlas Pixel Detector

    CERN Document Server

    Gan, K.K.; Jackson, P.D.; Johnson, M.; Kagan, H.; Buchholz, P.; Holder, M.; Roggenbuck, A.; Schade, P.

    2007-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the irradiation studies with 24 GeV protons up to 32 Mrad (1.2 x 10^15 p/cm^2) and the experience from the production.

  14. Tuneable Current Mode RMS Detector

    Science.gov (United States)

    Petrović, Predrag B.

    2015-01-01

    A new realization of RMS detector, employing two CCCIIs (controlled current conveyors), metal-oxide-semiconductor transistors and single grounded capacitor is present in this paper, without any external resistors and components matching requirements. The proposed circuit can be applied in measuring the RMS value of periodic, band-limited signals. The proposed circuit is very appropriate to further develop into integrated circuits. The errors related to the signal processing and errors bound were investigated and provided. To verify the theoretical analysis, the circuit PSpice simulations have also been included, showing good agreement with the theory.

  15. ATLAS Fact Sheet : To raise awareness of the ATLAS detector and collaboration on the LHC

    CERN Multimedia

    ATLAS Outreach

    2010-01-01

    Facts on the Detector, Calorimeters, Muon System, Inner Detector, Pixel Detector, Semiconductor Tracker, Transition Radiation Tracker,, Surface hall, Cavern, Detector, Magnet system, Solenoid, Toroid, Event rates, Physics processes, Supersymmetric particles, Comparing LHC with Cosmic rays, Heavy ion collisions, Trigger and Data Acquisition TDAQ, Computing, the LHC and the ATLAS collaboration. This fact sheet also contains images of ATLAS and the collaboration as well as a short list of videos on ATLAS available for viewing.

  16. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  17. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  18. Hard probes 2006 Asilomar

    CERN Multimedia

    2006-01-01

    "The second international conference on hard and electromagnetic probes of high-energy nuclear collisions was held June 9 to 16, 2006 at the Asilomar Conference grounds in Pacific Grove, California" (photo and 1/2 page)

  19. Crystal Indentation Hardness

    Directory of Open Access Journals (Sweden)

    Ronald W. Armstrong

    2017-01-01

    Full Text Available There is expanded interest in the long-standing subject of the hardness properties of materials. A major part of such interest is due to the advent of nanoindentation hardness testing systems which have made available orders of magnitude increases in load and displacement measuring capabilities achieved in a continuously recorded test procedure. The new results have been smoothly merged with other advances in conventional hardness testing and with parallel developments in improved model descriptions of both elastic contact mechanics and dislocation mechanisms operative in the understanding of crystal plasticity and fracturing behaviors. No crystal is either too soft or too hard to prevent the determination of its elastic, plastic and cracking properties under a suitable probing indenter. A sampling of the wealth of measurements and reported analyses associated with the topic on a wide variety of materials are presented in the current Special Issue.

  20. A wide dynamic range square-law diode detector

    Science.gov (United States)

    Aparici, Juan

    1988-09-01

    Semiconductor square-law diode detectors are frequently used in radio astronomy to recover signals immersed in the system noise. Their use is commonly restricted to narrow dynamic ranges of very low signal levels where the square-law is valid. A circuit based on operational amplifiers is proposed that would minimize temperature-drift effects within a dynamic range greater than 30 dB, with an efficiency 600 times greater than the simple high-impedance unbiased detector. Using square-law detector theory, optimum performance is determined for a detector driving source impedance of about 14 percent of the dynamic resistance.

  1. Assessing CZT detector performance for environmental radioactivity investigations.

    Science.gov (United States)

    Rahman, Rubina; Plater, A J; Nolan, P J; Appleby, P G

    2013-05-01

    Cadmium zinc telluride (CdZnTe or CZT) is the leading semiconductor detector for gamma spectroscopy at room temperature. In the present study, a coplanar-grid CZT detector was used for gamma-ray measurements of environmental radioactivity on a contaminated saltmarsh sediment core in comparison with results from a coaxial high-purity germanium detector to assess their comparative performance. The findings reveal that the CZT performs well for both (241)Am and (137)Cs measurements over a broad range of activities, despite limited detector efficiency, and can be used to good effect in the study of environmental radioactivity in contaminated estuarine settings.

  2. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear......In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... is determined by (but not equal to) the electron momentum relaxation rate. Single cycle pulses of light, irrespective of the frequency range to which they belong, inherently have an ultrabroadband spectrum covering many octaves of frequencies. Unlike the single-cycle pulses in optical domain, the THz pulses can...... be easily sampled with sub-cycle resolution using conventional femtosecond lasers. This makes the THz pulses accessible model tools for direct observation of general nonlinear optical phenomena occurring in the single-cycle regime....

  3. Physics of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prew, B.A.

    1975-09-01

    The properties of semiconductors which make them important in the electronic devices industry, and how these properties are controlled by doping, are described. The physics and applications of p-n and other junction devices, and of bulk effect devices are discussed. Avalanche devices, optical devices, solar cells, Schottky barriers, MOS devices, heterojunctions, photoconductors, and transferred electron devices are considered.

  4. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    11] A detailed review article of defects in semiconductor nanostructures is currently under preparation. [12] V Ranjan and Vijay A Singh, J. Appl. Phys. 89, 6415 (2001). [13] V Ranjan, R K Pandey, Manoj K Harbola and Vijay A Singh, Phys. Rev.

  5. Hardness amplification in nondeterministic logspace

    OpenAIRE

    Gupta, Sushmita

    2007-01-01

    A hard problem is one which cannot be easily computed by efficient algorithms. Hardness amplification is a procedure which takes as input a problem of mild hardness and returns a problem of higher hardness. This is closely related to the task of decoding certain error-correcting codes. We show amplification from mild average case hardness to higher average case hardness for nondeterministic logspace and worst-to-average amplification for nondeterministic linspace. Finally we explore possible ...

  6. ATLAS Inner Detector: Commissioning with Cosmics Data

    CERN Document Server

    The ATLAS collaboration

    2009-01-01

    The ATLAS experiment at the CERN Large Hadron Collider (LHC) has started taking data last autumn with the inauguration of the LHC. Determination of vertex position and charged particle tracks is performed in the Inner Detector which consists of pixel and microstrip Silicon sensors and transition radiation tubes. In this talk construction and commissioning of these three detectors will be presented. The Pixel Detector is the innermost detector of the ATLAS experiment with approx. 80 million readout channels. After connection of cooling and services and verification of their operation the ATLAS Pixel Detector is now in the final stage of its commissioning phase. Prior to the first beams expected in Autumn 2009, a full characterization of the detector is performed. The SemiConductor Tracker (SCT) is made up from silicon micro-strip detectors processed in the planar p-in-n technology. Sensors are assembled into 4000 modules with 6 million readout channels. The completed SCT detector was operated for many months u...

  7. The color of X-rays: Spectral X-ray computed tomography using energy sensitive pixel detectors

    NARCIS (Netherlands)

    Schioppa, E.J.

    2014-01-01

    Energy sensitive X-ray imaging detectors are produced by connecting a semiconductor sensor to a spectroscopic pixel readout chip. In this thesis, the applicability of such detectors to X-ray Computed Tomography (CT) is studied. A prototype Medipix based silicon detector is calibrated using X-ray

  8. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y

    2002-01-01

    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  9. Pixel Detectors

    CERN Document Server

    Wermes, Norbert

    2005-01-01

    Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel technology which can be considered the state of the art in this field of instrumentation. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh radiation environment at the LHC without severe compromises in performance. From these developments a number of different applications have spun off, most notably for biomedical imaging. Beyond hybrid pixels, a number of monolithic or semi-monolithic developments, which do not require complicated hybridization but come as single sensor/IC entities, have appeared and are currently developed to greater maturity. Most advanced in terms of maturity are so called CMOS active pixels and DEPFET pixels. The present state in the ...

  10. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. Germanium blocked impurity band far infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rossington, C.S.

    1988-04-01

    The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration.

  12. Pixel detectors from fundamentals to applications

    CERN Document Server

    Rossi, Leonardo; Rohe, Tilman; Wermes, Norbert

    2006-01-01

    Pixel detectors are a particularly important class of particle and radiation detection devices. They have an extremely broad spectrum of applications, ranging from high-energy physics to the photo cameras of everyday life. This book is a general purpose introduction into the fundamental principles of pixel detector technology and semiconductor-based hybrid pixel devices. Although these devices were developed for high-energy ionizing particles and radiation beyond visible light, they are finding new applications in many other areas. This book will therefore benefit all scientists and engineers working in any laboratory involved in developing or using particle detection.

  13. Advances in Detector Technology for Infrared Astronomy

    Science.gov (United States)

    McCreight, Craig; Cheng, P. L. (Technical Monitor)

    1995-01-01

    Progress in semiconductor materials and processing technology has allowed the development of infrared detector arrays with unprecedented sensitivity, for imaging and spectroscopic applications in astronomy. The earlier discrete-detector approach has been replaced by large-element (up to 1024 x 1024 pixel), multiplexed devices. Progress has been made against a number of key limiting factors, such as quantum efficiency, noise, spectral response, linearity, and dark current. Future developments will focus on the need for even larger arrays, which operate at higher temperatures.

  14. Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

    Science.gov (United States)

    Kim, Joon-Il; Peters, John A.; He, Yihui; Liu, Zhifu; Das, Sanjib; Kontsevoi, Oleg Y.; Kanatzidis, Mercouri G.; Wessels, Bruce W.

    2017-10-01

    Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg3Se2I2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as first-principles density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 1013-1015c m-3 and capture cross sections of ˜10-16c m2 . A distinct persistent photoconductivity is observed at both low temperatures (230 K), with major implications for room-temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (VHg, VSe, and VI) and interstitials (Seint) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

  15. Development of advanced silicon radiation detectors for harsh radiation environment

    CERN Document Server

    Groenlund, Tanja

    2012-01-01

    This thesis describes the development of advanced silicon radiation detectors and their characterization by simulations, used in the work for searching elementary particles in the European Organization for Nuclear Research, CERN. Silicon particle detectors will face extremely harsh radiation in the proposed upgrade of the Large Hadron Collider, the future high-energy physics experiment Super-LHC. The increase in the maximal fluence and the beam luminosity up to 1016 neq / cm2 and 1035 cm-2s-1 will require detectors with a dramatic improvement in radiation hardness, when such a fluence will be far beyond the operational limits of the present silicon detectors. The main goals of detector development concentrate on minimizing the radiation degradation. This study contributes mainly to the device engineering technology for developing more radiation hard particle detectors with better characteristics. Also the defect engineering technology is discussed. In the nearest region of the beam in Super-LHC, the only dete...

  16. Hard exclusive reactions and generalized parton distributions

    Directory of Open Access Journals (Sweden)

    Hayrapetyan Avetik

    2015-01-01

    Full Text Available The recently developed formalism of Generalized Parton Distributions (GPDs allows connecting the experimental information of hard exclusive reactions to the spin contribution and even to the angular momentum contribution of quarks in the nucleon. By selecting different quantum numbers of the final state in exclusive productions, different GPDs can be addressed separately. The HERMES experiment at the HERA ring at DESY (Hamburg made pioneering contributions and first constraints to Generalized Parton Distributions (GPDs, using hard exclusive vector meson production (EVMP and Deeply Virtual Compton Scattering (DVCS. Using a novel recoil detector, HERMES managed to measure DVCS and EVMP free of any significant background. Selected results are highlighted and discussed in this paper.

  17. "Work smart, wear your hard hat"

    CERN Multimedia

    2003-01-01

    Falling objects and collisions are frequent occurrences in work sites and hazardous areas. Hard hats can help prevent many types of accident and can even save lives. Just imagine an 800 g spanner falling from a 13 m high scaffold onto the head of someone standing below - a nightmare scenario! The impact to the head is equivalent to that of a 5 kg weight falling from 2 metres. That is just what happened to Gerd Fetchenhauer when he was working on the UA1 experiment. Fortunately, he was wearing a hard hat at the time. "That hat saved my life," he explains. "It punched a hole right through the hat and I was a bit dazed for a couple of hours but otherwise I was OK." Since that day, Gerd Fetchenhauer, now working on CMS, is never seen on a work site without his hard hat on. Work sites have proliferated at CERN with the construction of the LHC and its detectors, and the wearing of hard hats is compulsory (not to mention life-saving). In the underground caverns and experiment halls, where gantry cranes and other h...

  18. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  19. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  20. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  1. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  2. Hard superconducting nitrides

    Science.gov (United States)

    Chen, Xiao-Jia; Struzhkin, Viktor V.; Wu, Zhigang; Somayazulu, Maddury; Qian, Jiang; Kung, Simon; Christensen, Axel Nørlund; Zhao, Yusheng; Cohen, Ronald E.; Mao, Ho-kwang; Hemley, Russell J.

    2005-01-01

    Detailed study of the equation of state, elasticity, and hardness of selected superconducting transition-metal nitrides reveals interesting correlations among their physical properties. Both the bulk modulus and Vickers hardness are found to decrease with increasing zero-pressure volume in NbN, HfN, and ZrN. The computed elastic constants from first principles satisfy c11 > c12 > c44 for NbN, but c11 > c44 > c12 for HfN and ZrN, which are in good agreement with the neutron scattering data. The cubic δ-NbN superconducting phase possesses a bulk modulus of 348 GPa, comparable to that of cubic boron nitride, and a Vickers hardness of 20 GPa, which is close to sapphire. Theoretical calculations for NbN show that all elastic moduli increase monotonically with increasing pressure. These results suggest technological applications of such materials in extreme environments. PMID:15728352

  3. Infrared Semiconductor Metamaterials

    Science.gov (United States)

    2016-09-01

    AFRL-AFOSR-VA-TR-2016-0310 Infrared Semiconductor Metamaterials Jon Schuller UNIVERSITY OF CALIFORNIA SANTA BARBARA 3227 CHEADLE HL SANTA BARBARA, CA...S) AND ADDRESS(ES) University of California , Santa Barbara Office of Research, 3227 Cheadle Hall Santa Barbara, CA 93106-2050 8. PERFORMING...Using Heterojunction Resonators. Advanced Optical Materials, available online (2016). New discoveries, inventions, or patent disclosures: Do you have

  4. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  5. Hole crystallization in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bonitz, M [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Filinov, V S [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Fortov, V E [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Levashov, P R [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Fehske, H [Institut fuer Physik, Universitaet Greifswald, l7487 Greifswald (Germany)

    2006-04-28

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  6. Hole crystallization in semiconductors

    OpenAIRE

    Bonitz, M.; Filinov, V. S.; Fortov, V. E.; Levashov, P. R.; Fehske, H.

    2005-01-01

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  7. Neutron detector

    Science.gov (United States)

    Stephan, Andrew C [Knoxville, TN; Jardret,; Vincent, D [Powell, TN

    2011-04-05

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  8. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  9. Session: Hard Rock Penetration

    Energy Technology Data Exchange (ETDEWEB)

    Tennyson, George P. Jr.; Dunn, James C.; Drumheller, Douglas S.; Glowka, David A.; Lysne, Peter

    1992-01-01

    This session at the Geothermal Energy Program Review X: Geothermal Energy and the Utility Market consisted of five presentations: ''Hard Rock Penetration - Summary'' by George P. Tennyson, Jr.; ''Overview - Hard Rock Penetration'' by James C. Dunn; ''An Overview of Acoustic Telemetry'' by Douglas S. Drumheller; ''Lost Circulation Technology Development Status'' by David A. Glowka; ''Downhole Memory-Logging Tools'' by Peter Lysne.

  10. Hard-hat day

    CERN Multimedia

    2003-01-01

    CERN will be organizing a special information day on Friday, 27th June, designed to promote the wearing of hard hats and ensure that they are worn correctly. A new prevention campaign will also be launched.The event will take place in the hall of the Main Building from 11.30 a.m. to 2.00 p.m., when you will be able to come and try on various models of hard hat, including some of the very latest innovative designs, ask questions and pass on any comments and suggestions.

  11. Organic semiconductor devices for X-ray imaging

    Science.gov (United States)

    Blakesley, J. C.; Keivanidis, P. E.; Campoy-Quiles, M.; Newman, C. R.; Jin, Y.; Speller, R.; Sirringhaus, H.; Greenham, N. C.; Nelson, J.; Stavrinou, P.

    2007-09-01

    We investigate the potential for replacing inorganic semiconductors with polymeric semiconductors in medical X-ray imaging applications. Polymeric semiconductors are soft and can be fabricated using techniques such as spin coating and jet printing, leading to reductions in fabrication costs for large-area arrays, easy integration of heterostructures and composite materials and the possibility of using flexible substrates. By using a combined cascaded linear systems and Monte-Carlo model to simulate the imaging system, we establish a set of semiconductor requirements for a feasible flat-panel imager (FPI). We have fabricated photodiodes and thin-film transistors (TFTs) out of a variety of polymer materials. Polymer photodiodes coupled to phosphor screens have shown a response to X-ray radiation with a good efficiency. Both transistors and photodiodes were sufficiently radiation hard for use in clinical imaging conditions. A composite phosphor-polymer material has been fabricated and has been found to be compatible with polymeric photodiodes. The composite material can be fabricated within a structure as part of the semiconductor fabrication process.

  12. Tale of two hard Pomerons

    CERN Document Server

    Berera, A

    2000-01-01

    Two mechanisms are examined for hard double "pomeron" exchange dijet production, the factorized model of Ingelman-Schlein, and the nonfactorized model of lossless jet production which exhibits the Collins-Frankfurt-Strikman mechanism. Comparisons between these two mechanisms are made of the total cross section, E/sub T/ spectra, and mean rapidity spectra. For both mechanisms, several specific models are examined with the cuts of the collider detector at Fermilab (CDF) , DOE, and representative cuts of CERN LHC. Distinct qualitative differences are predicted by the two mechanisms for the CDF y/sub +/ spectra and for the E/sub T/ spectra for all three experimental cuts. The preliminary CDF and DOE experimental data for this process are interpreted in terms of these two mechanisms. The y/sub +/ spectra of the CDF data are suggestive of domination by the factorized Ingelman- Schlein mechanism, whereas the DOE data show no greater preference for either mechanism. An inconsistency is found among all the theoretical...

  13. Radiation-hard Optoelectronics for LHC detector upgrades.

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

    A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

  14. Bolometric detectors: optimization for differential radiometers.

    Science.gov (United States)

    Glezer, E N; Lange, A E; Wilbanks, T M

    1992-12-01

    A differential radiometer can be constructed by placing two matched bolometric detectors in an ac bridge, thus producing a signal that is proportional to the difference in power incident on the two detectors. In conditions of large and time-varying common-mode radiative load, the common-mode response resulting from imperfectly matched detectors can limit the stability of the difference signal. For semiconductor thermistor bolometers we find that the bridge can always be trimmed to null the common-mode response for a given instantaneous value of the radiative load. However, subsequent changes in the commonmode radiative load change the operating point of the detectors, giving rise to a second-order common-mode response. This response can be minimized by increasing the electrical-power dissipation in the detectors at the cost of sensitivity. For the case that we are analyzing, and for mismatches in detector parameters that are typical of randomly paired detectors, common-mode rejection ratios in excess of 10(3) can be achieved under 20% changes in radiative load.

  15. Radiation Hardness Assurance for Space Systems

    Science.gov (United States)

    Poivey, Christian; Day, John H. (Technical Monitor)

    2002-01-01

    The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section

  16. Semiconductor Detector Developments for High Energy Space Astronomy

    OpenAIRE

    Meuris, Aline

    2014-01-01

    The rise of high energy astrophysics and solar physics in the 20th century is linked to the development of space telescopes; since the 1960s they have given access to the X-ray and gamma-ray sky, revealing the most violent phenomena in the Universe. Research and developments in imaging concepts and sensing materials haven't stopped since yet to improve the sensitivity of the X-ray and gamma-ray observatories. The paper proposes an overview of instrument realizations and focuses on the innovat...

  17. Hardness and excitation energy

    Indian Academy of Sciences (India)

    It is shown that the first excitation energy can be given by the Kohn-Sham hardness (i.e. the energy difference of the ground-state lowest unoccupied and highest occupied levels) plus an extra term coming from the partial derivative of the ensemble exchange-correlation energy with respect to the weighting factor in the ...

  18. Hard Probes at ATLAS

    CERN Document Server

    Citron, Z; The ATLAS collaboration

    2014-01-01

    The ATLAS collaboration has measured several hard probe observables in Pb+Pb and p+Pb collisions at the LHC. These measurements include jets which show modification in the hot dense medium of heavy ion collisions as well as color neutral electro-weak bosons. Together, they elucidate the nature of heavy ion collisions.

  19. Hardness of metallic crystals

    Indian Academy of Sciences (India)

    Administrator

    where H is the hardness, k the coefficient, G the shear modulus, ν the Poisson's ratio, η a function of the radius of an atom (r) and the electron density at the atom interface (n). The formula will not only be used to testify the critical grain size with stable dislocations, but also play an important role in the understanding of ...

  20. Running in Hard Times

    Science.gov (United States)

    Berry, John N., III

    2009-01-01

    Roberta Stevens and Kent Oliver are campaigning hard for the presidency of the American Library Association (ALA). Stevens is outreach projects and partnerships officer at the Library of Congress. Oliver is executive director of the Stark County District Library in Canton, Ohio. They have debated, discussed, and posted web sites, Facebook pages,…

  1. CSI: Hard Drive

    Science.gov (United States)

    Sturgeon, Julie

    2008-01-01

    Acting on information from students who reported seeing a classmate looking at inappropriate material on a school computer, school officials used forensics software to plunge the depths of the PC's hard drive, searching for evidence of improper activity. Images were found in a deleted Internet Explorer cache as well as deleted file space.…

  2. Hard and Soft Governance

    DEFF Research Database (Denmark)

    Moos, Lejf

    2009-01-01

    The governance and leadership at transnational, national and school level seem to be converging into a number of isomorphic forms as we see a tendency towards substituting 'hard' forms of governance, that are legally binding, with 'soft' forms based on persuasion and advice. This article analyses...

  3. Hardness and excitation energy

    Indian Academy of Sciences (India)

    Unknown

    form a new species leading to a single electronegativity or chemical potential (the same way as in ordinary thermodynamics). The hardness η of an electronic system is ..... Technological Innovation Foundation and the Minis- try of Science and Technology. This work was also supported by the grant OTKA No. T042505.

  4. Uncooled detector development at Raytheon

    Science.gov (United States)

    Black, S. H.; Sessler, T.; Gordon, E.; Kraft, R.; Kocian, T.; Lamb, M.; Williams, R.; Yang, T.

    2011-06-01

    At the 2010 meeting of the Defense and Security Symposia Raytheon reported on the status of their efforts to establish a high rate uncooled detector manufacturing capability. At that time we had just finished the transition of the 640 × 480, 25 μm product to our 200 mm wafer fab line at Freescale semiconductor and established an automated packaging and test capability. Over the past year we have continued to build on that foundation. In this paper we will report on this year's progress in completing the transition of our 25 μm product line to Freescale semiconductor. Included will be the 320 × 240 product transition and a summary of SPC and defectivity data from one year's production. Looking beyond 25 μm, we are well along in our transition of the 17 μm product line to Freescale, with test results being available for the 640 × 480. Additionally, we will report on progress / status of the Tailwind program, which is developing a 2048 × 1536, 17 μm uncooled sensor. Data to be reported includes the establishment of subfield stitching at a high rate commercial fab and the development of the detector package and electronics. With 17 μm transitioned to production, Raytheon has started work on the HD LWIR program, which is laying the foundation for the next generation of uncooled detectors by further shrinking the pixel to <17 μm. With the HD LWIR program just beginning, we will review our development strategy and program plan.

  5. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  6. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  7. Core-shell diodes for particle detectors

    Science.gov (United States)

    Jia, Guobin; Plentz, Jonathan; Höger, Ingmar; Dellith, Jan; Dellith, Andrea; Falk, Fritz

    2016-02-01

    High performance particle detectors are needed for fundamental research in high energy physics in the exploration of the Higgs boson, dark matter, anti-matter, gravitational waves and proof of the standard model, which will extend the understanding of our Universe. Future particle detectors should have ultrahigh radiation hardness, low power consumption, high spatial resolution and fast signal response. Unfortunately, some of these properties are counter-influencing for the conventional silicon drift detectors (SDDs), so that they cannot be optimized simultaneously. In this paper, the main issues of conventional SDDs have been analyzed, and a novel core-shell detector design based on micro- and nano-structures etched into Si-wafers is proposed. It is expected to simultaneously reach ultrahigh radiation hardness, low power consumption, fast signal response and high spatial resolution down to the sub-micrometer range, which will probably meet the requirements for the most powerful particle accelerators in the near future. A prototype core-shell detector was fabricated using modern silicon nanotechnology and the functionality was tested using electron-beam-induced current measurements. Such a high performance detector will open many new applications in extreme radiation environments such as high energy physics, astrophysics, high resolution (bio-) imaging and crystallography, which will push these fields beyond their current boundaries.

  8. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  9. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  10. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  11. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  12. Gallium nitride nanoparticles for solar-blind detectors

    Indian Academy of Sciences (India)

    Unknown

    materials had been the realization of blue light emitting diodes and lasers, the technological advances that resulted have renewed the interest and led to significant progress in UV detectors.1. Apart from the advances in wide band gap semiconductors where the fabrication process involves high temperature epitaxial growth ...

  13. Development of a Si/CdTe Semiconductor Compton Telescope

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, T.

    2005-04-22

    We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9{sup o} and 5.7{sup o} at 122 keV and 356 keV, respectively.

  14. Forward Instrumentation for ILC Detectors

    CERN Document Server

    Abramowicz, Halina; Afanaciev, Konstantin; Aguilar, Jonathan; Ambalathankandy, Prasoon; Bambade, Philip; Bergholz, Matthias; Bozovic-Jelisavcic, Ivanka; Castro, Elena; Chelkov, Georgy; Coca, Cornelia; Daniluk, Witold; Dragone, Angelo; Dumitru, Laurentiu; Elsener, Konrad; Emeliantchik, Igor; Fiutowski, Tomasz; Gostkin, Mikhail; Grah, Christian; Grzelak, Grzegorz; Haller, Gunter; Henschel, Hans; Ignatenko, Alexandr; Idzik, Marek; Ito, Kazutoshi; Jovin, Tatjana; Kielar, Eryk; Kotula, Jerzy; Krumstein, Zinovi; Kulis, Szymon; Lange, Wolfgang; Lohmann, Wolfgang; Levy, Aharon; Moszczynski, Arkadiusz; Nauenberg, Uriel; Novgorodova, Olga; Ohlerich, Marin; Orlandea, Marius; Oleinik, Gleb; Oliwa, Krzysztof; Olshevski, Alexander; Pandurovic, Mila; Pawlik, Bogdan; Przyborowski, Dominik; Sato, Yutaro; Sadeh, Iftach; Sailer, Andre; Schmidt, Ringo; Schumm, Bruce; Schuwalow, Sergey; Smiljanic, Ivan; Swientek, Krzysztof; Takubo, Yosuke; Teodorescu, Eliza; Wierba, Wojciech; Yamamoto, Hitoshi; Zawiejski, Leszek; Zhang, Jinlong

    2010-01-01

    Two special calorimeters are foreseen for the instrumentation of the very forward region of the ILC detector, a luminometer designed to measure the rate of low angle Bhabha scattering events with a precision better than 10-3 and a low polar angle calorimeter, adjacent to the beam-pipe. The latter will be hit by a large amount of beamstrahlung remnants. The amount and shape of these depositions will allow a fast luminosity estimate and the determination of beam parameters. The sensors of this calorimeter must be radiation hard. Both devices will improve the hermeticity of the detector in the search for new particles. Finely segmented and very compact calorimeters will match the requirements. Due to the high occupancy fast front-end electronics is needed. The design of the calorimeters developed and optimised with Monte Carlo simulations is presented. Sensors and readout electronics ASICs have been designed and prototypes are available. Results on the performance of these major components are summarised.

  15. SUPER HARD SURFACED POLYMERS

    Energy Technology Data Exchange (ETDEWEB)

    Mansur, Louis K [ORNL; Bhattacharya, R [UES, Incorporated, Dayton, OH; Blau, Peter Julian [ORNL; Clemons, Art [ORNL; Eberle, Cliff [ORNL; Evans, H B [UES, Incorporated, Dayton, OH; Janke, Christopher James [ORNL; Jolly, Brian C [ORNL; Lee, E H [Consultant, Milpitas, CA; Leonard, Keith J [ORNL; Trejo, Rosa M [ORNL; Rivard, John D [ORNL

    2010-01-01

    High energy ion beam surface treatments were applied to a selected group of polymers. Of the six materials in the present study, four were thermoplastics (polycarbonate, polyethylene, polyethylene terephthalate, and polystyrene) and two were thermosets (epoxy and polyimide). The particular epoxy evaluated in this work is one of the resins used in formulating fiber reinforced composites for military helicopter blades. Measures of mechanical properties of the near surface regions were obtained by nanoindentation hardness and pin on disk wear. Attempts were also made to measure erosion resistance by particle impact. All materials were hardness tested. Pristine materials were very soft, having values in the range of approximately 0.1 to 0.5 GPa. Ion beam treatment increased hardness by up to 50 times compared to untreated materials. For reference, all materials were hardened to values higher than those typical of stainless steels. Wear tests were carried out on three of the materials, PET, PI and epoxy. On the ion beam treated epoxy no wear could be detected, whereas the untreated material showed significant wear.

  16. Hard Probes at RHIC

    Directory of Open Access Journals (Sweden)

    Bielčíková Jana

    2014-04-01

    Full Text Available Measurements of jets and heavy flavour, the so called hard probes, play a crucial role in understanding properties of hot and dense nuclear matter created in high energy heavy-ion collisions. The measurements at the Relativistic Heavy Ion Collider (RHIC showed that in central Au+Au collisons at RHIC energy ( √sNN = 200 GeV the nuclear matter created has properties close to those of perfect liquid, manifests partonic degrees of freedom and is opaque to hard probes. In order to draw quantitative conclusions on properties of this hot and dense nuclear matter reference measurements in proton-proton collisions and d+Au collisions are essential to estimate cold nuclear matter effects. In this proceedings a review of recent results on hard probes measurements in p+p, d+Au and A+A collisions as well as of beam energy dependence of jet quenching from STAR and PHENIX experiments at RHIC is presented.

  17. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  18. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  19. The development and performance of silicon strip modules for the ATLAS forward semi-conductor tracker

    CERN Document Server

    Peeters, S J M

    2003-01-01

    The ATLAS experiment at CERN forms a big challenge in detector development, due to its size and expected data rate provided by the Large Hadron Collider, which is expected to be operational in 2007. The Semi-Conductor Tracker will use silicon strip sensors and is one of the three inner tracking detectors foreseen for the ATLAS experiment, which will be enclosed in a 2 T solenoid magnetic field. Its main goal is to provide four precision measurements of each charged particle's track. This paper focuses on the silicon strip detector modules used in the forward direction of the experiment, which are about to go into production. The two endcap detector systems that will be constructed will consist of approximately 13 m **2 sensor surface with over 3 million channels in about 2000 detector modules. This paper describes the design of the detector modules and shows the results on their performance.

  20. Alignment strategy for the Inner Detector of ATLAS

    CERN Document Server

    Bruckman de Renstrom, P

    2006-01-01

    ATLAS is a general purpose spectrometer in preparation to take data on the Large Hadron Collider at CERN. It will start its operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. ID consists of two silicon subsystems: Pixel Detector and Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices a high accuracy alignment is required. In this report the strategy to align sub-detectors of the ATLAS ID is reviewed together with the current status of preparation. Both track-based and hardware alignment methods are presented.

  1. Alignment Strategy for the Inner Detector of ATLAS

    CERN Document Server

    Bruckman de Renstrom, P

    2006-01-01

    ATLAS is a general purpose spectrometer in preparation to take data on the Large Hadron Collider at CERN. It will start its operation in autumn 2007. Charged particle tracking is realized by the Inner Detector. ID consists of two silicon subsystems: Pixel Detector and Semiconductor Tracker complemented by straw proportional gas chambers. In order to exploit the excellent intrinsic resolution of the precision tracking devices a high accuracy alignment is required. In this report the strategy to align sub-detectors of the ATLAS ID is reviewed together with the current status of preparation. Both track-based and hardware alignment methods are presented

  2. Organic Scintillator Detector Response Simulations with DRiFT

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, Madison Theresa [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Bates, Cameron Russell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mckigney, Edward Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rising, Michael Evan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pinilla, Maria Isabel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Solomon, Jr., Clell Jeffrey [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Sood, Avneet [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-12-19

    Accurate detector modeling is a requirement to design systems in many non-proliferation scenarios; by determining a Detector’s Response Function (DRF) to incident radiation, it is possible characterize measurements of unknown sources. DRiFT is intended to post-process MCNP® output and create realistic detector spectra. Capabilities currently under development include the simulation of semiconductor, gas, and (as is discussed in this work) scintillator detector physics. Energy spectra and pulse shape discrimination (PSD) trends for incident photon and neutron radiation have been reproduced by DRiFT.

  3. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  4. Variable temperature semiconductor film deposition

    Science.gov (United States)

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  5. Process for producing chalcogenide semiconductors

    Science.gov (United States)

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  6. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  7. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  8. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  9. FOS in CMS detector at CERN

    CERN Document Server

    Buontempo, Salvatore

    2010-01-01

    Preliminary results are presented on the activity carried out by our research group on possible application of Fiber Optic Sensor (FOS) techniques to monitor high-energy physics (HEP) detectors. Assuming that Fiber Optic radiation hardness has been deeply studied for other field of application, we have applied the FOS technology to the HEP research domain. In present paper we give the experimental evidences of the solid possibility to use such a class of sensors also in HEP detector very complex environmental side conditions. In particular we present first results of FOS measurements in the Compact Muon Solenoid (CMS) experiment set up at the CERN, where we have monitored temperatures and strains in different locations by using Bragg Grating sensors during the detector operation with the Large Hadron Collider (LHC). On specific request of HEP detector experts we have also started the development of a new class of Relative Humidity (RH) sensor based on Fiber Optic technology, able to perform the monitoring of ...

  10. CVD diamond detectors for ionizing radiation

    CERN Document Server

    Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

  11. Development of fountain detectors for spectroscopy of secondary electron in SEM

    Energy Technology Data Exchange (ETDEWEB)

    Agemura, Toshihide [University of Tsukuba (Japan); Iwai, Hideo [National Institute for Materials Science, Tsukuba (Japan); Sekiguchi, Takashi [University of Tsukuba (Japan); National Institute for Materials Science, Tsukuba (Japan)

    2017-07-15

    To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p-n junction of 4H-SiC was observed using spherical FD and the image was much clear than that using conventional detector. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  13. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    CERN Document Server

    Luke, P N; Lee Jae Sik; Yaver, H

    2000-01-01

    A three-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

  14. Radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Taleyarkhan, Rusi P.

    2017-06-27

    Alpha particle detecting devices are disclosed that have a chamber that can hold a fluid in a tensioned metastable state. The chamber is tuned with a suitable fluid and tension such that alpha emitting materials such as radon and one or more of its decay products can be detected. The devices can be portable and can be placed in areas, such as rooms in dwellings or laboratories and used to measure radon in these areas, in situ and in real time. The disclosed detectors can detect radon at and below 4 pCi/L in air; also, at and below 4,000 pCi/L or 300 pCi/L in water.

  15. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  16. Integrating magneto-optical garnet isolators on semiconductor substrates

    Science.gov (United States)

    Sung, Sang-Yeob

    semiconductor integrated laser diode, fully integrated optical isolator and other integrated optical components such as modulators, amplifiers, detectors, and switches.

  17. The ATLAS Semiconductor tracker: operations and performance

    CERN Document Server

    Pani, P; The ATLAS collaboration

    2013-01-01

    Tracker After more than 3 years of successful operation at the LHC, we report on the operation and performance of the Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment. The SCT is part of the ATLAS experiment at CERN and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of the barrel). The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals are processed in the front-end ABCD3TA ASICs, which use a binary readout architecture. Data is transferred to the off-detector readout electronics via optical fibers. We find 99.3% of the SCT modules are operational, noise occupancy and hit efficiency exceed the design specifications; the alignment is very cl...

  18. Optical investigations of nanostructured oxides and semiconductors

    Science.gov (United States)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  19. CLIC Detector Power Requirements

    CERN Document Server

    Gaddi, A

    2013-01-01

    An estimate for the CLIC detector power requirements is outlined starting from the available data on power consumptions of the four LHC experiments and considering the differences between a typical LHC Detector (CMS) and the CLIC baseline detector concept. In particular the impact of the power pulsing scheme for the CLIC Detector electronics on the overall detector consumption is considered. The document will be updated with the requirements of the sub-detector electronics once they are more defined.

  20. Photocatalysis Using Semiconductor Nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Thurston, T.R.; Wilcoxon,J.P.

    1999-01-21

    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  1. Semiconductor optoelectronic infrared spectroscopy

    CERN Document Server

    Hollingworth, A R

    2001-01-01

    level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy. We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their futu...

  2. Semiconductor adiabatic qubits

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  3. Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics (Per5 E)

    Science.gov (United States)

    2017-06-01

    O) semiconductors with s- orbital dominated conduction bands because of their potential for radiation hardness and self-healing very different (and...semiconductors with s- orbital dominated conduction bands. s- orbital conduction band materials are particularly interesting because they offer...Singh [49] as well as the two electron satellite (TES) transition. Both PLD and PEALD films show phonon replicas of the free exciton peak (FXA-1LO

  4. A Soft Detector with Good Performance/Complexity Trade-Off for a MIMO System

    Directory of Open Access Journals (Sweden)

    Jianhua Liu

    2004-08-01

    Full Text Available We present a hybrid soft detector that has a good performance/complexity trade-off for a multiple-input multiple-output (MIMO wireless communication system with known channel information. The new soft detector combines the merits of a simple unstructured least-squares (LS-based soft detector and a list sphere decoder (LSD-based soft detector for data bit detection. The former is computationally much more efficient than the latter at the cost of poorer performance. The poor performance of the former occurs mainly when the channel matrix is ill-conditioned. Whenever this happens, we use the LSD-based soft detector in the hybrid soft detector; otherwise, we use the LS-based one. Moreover, we provide a tight radius for a sphere decoder, a hard detector, via using the output of an LS-based hard detector. These two hard detectors are needed to determine if LS or LSD should be used in the hybrid soft detector. As an application example, we consider doubling the maximum data rate of the IEEE 802.11a conformable wireless local area networks by a MIMO system with two transmit and two receive antennas. For this application, the new soft detector is about 10 times faster than the LSD-based one and is about 10 times slower than the LS-based one. Yet the packet error rate due to using the new soft detector is quite close to that of using the LSD-based one.

  5. Vertex detectors: The state of the art and future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Damerell, C.J.S. [Rutherford Appleton Laboratory, Didcot (United Kingdom)

    1997-01-01

    We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters over the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.

  6. Detector electronics for experiments at the large hadron collider

    Science.gov (United States)

    Nikityuk, N. M.; Samoylov, V. N.

    2006-12-01

    The state of the art of a tracking detector and calorimeter electronics that are being developed for experiments at the Large Hadron Collider (LHC) is discussed. Construction of the detectors is briefly described. The problems of fabrication of integrated circuits based on a radiation-resistant technology are considered, as well as the solution to the problem of microconnections between sensitive elements and readout amplifiers in two-coordinate semiconductor detectors. The parameters and block diagrams of both analog and digital integrated circuits are given; these circuits are used for amplifying and shaping the signals measured by tracking detectors of elementary particles and calorimeters. The contributions of Russian experimenters and physicists of the Joint Institute for Nuclear Research to the development of detector electronics for experiments at the LHC is described.

  7. Revisiting the definition of local hardness and hardness kernel.

    Science.gov (United States)

    Polanco-Ramírez, Carlos A; Franco-Pérez, Marco; Carmona-Espíndola, Javier; Gázquez, José L; Ayers, Paul W

    2017-05-17

    An analysis of the hardness kernel and local hardness is performed to propose new definitions for these quantities that follow a similar pattern to the one that characterizes the quantities associated with softness, that is, we have derived new definitions for which the integral of the hardness kernel over the whole space of one of the variables leads to local hardness, and the integral of local hardness over the whole space leads to global hardness. A basic aspect of the present approach is that global hardness keeps its identity as the second derivative of energy with respect to the number of electrons. Local hardness thus obtained depends on the first and second derivatives of energy and electron density with respect to the number of electrons. When these derivatives are approximated by a smooth quadratic interpolation of energy, the expression for local hardness reduces to the one intuitively proposed by Meneses, Tiznado, Contreras and Fuentealba. However, when one combines the first directional derivatives with smooth second derivatives one finds additional terms that allow one to differentiate local hardness for electrophilic attack from the one for nucleophilic attack. Numerical results related to electrophilic attacks on substituted pyridines, substituted benzenes and substituted ethenes are presented to show the overall performance of the new definition.

  8. MUON DETECTOR

    CERN Document Server

    G. Iaselli

    Drift Tubes The long run of chamber certification and test at ISR ended in October. The full lot of 250 DT chambers, and some of the 16 spare not kept in the assembly sites for further studies and tests, were tested and equipped with Minicrates. It’s the end of a hard work lasted more than three years. 58 BMU Stations (DT + RPC) were installed in three weeks in the wheels YB-1 and -2 in the surface hall at point 5. With the exception of 6 chambers to be installed in the feet of YB0 and -1,-2 after the cabling this achieve¬ment marks the end of the installation of the Barrel MU in surface. Commissioning of the installed chambers is already going on.YB+2 passed the review to certify its readiness for lowering. Lowering is foreseen for the beginning of January, followed within a couple of weeks by that of YB+1. Lot of work is being deployed in the definition of the services on YB0. They are crucial for the definition of the length of many cables foreseen to be installed starting in January....

  9. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    CERN Document Server

    Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

    1999-01-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

  10. Semiconductor-superconductor optoelectronic devices

    Science.gov (United States)

    Bouscher, Shlomi; Panna, Dmitry; Hayat, Alex

    2017-10-01

    Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take advantage of both the extensive knowledge gathered in the field of semiconductors and the unique quantum properties of superconductors. This results in novel device concepts, such as structures generating and detecting entangled photon pairs as well as novel optical gain and laser realizations. In this review, we discuss the fundamental concepts and the underlying physical phenomena of superconductor-semiconductor optoelectronics as well as practical device implementations.

  11. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  12. MUON DETECTOR

    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  13. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    Directory of Open Access Journals (Sweden)

    Shen Guozhen

    2009-01-01

    Full Text Available Abstract The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  14. One-Dimensional Nanostructures and Devices of II-V Group Semiconductors.

    Science.gov (United States)

    Shen, Guozhen; Chen, Di

    2009-05-15

    The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn(3)P(2) nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  15. The Optical Links of the ATLAS SemiConductor Tracker

    CERN Document Server

    Abdesselam, A; Apsimon, R; Band, C; Barr, C; Batchelor, L; Bates, R; Bell, P; Bernabeu, J; Bizzell, J; Brenner, R; Brodbeck, T; Bruckman De Renstrom, P; Buttar, C; Carter, J; Charlton, D; Cheplakov, A; Chilingarov, A; Chu, M-L; Colijn, A-P; Dawson, I; Demirkõz, B; de Jong, P; Dervan, P; Dolezal, Z; Dowell, J; Escobar, P; Spencer, E; Ekelöf, T J C; Eklund, L; Ferrere, D; Fraser, T; French, M; French, R; Fuster, J; Gallop, B; García, C; Goodrick, M; Greenall, A; Grillo, A; Grosse-Knetter, J; Hartjes, F; Hessey, N; Hill, J C; Homer, J; Hou, L; Hughes, G; Ikegami, Y; Issever, C; Jackson, J; Jones, M; Jones, T J; Jovanovic, P; Koffeman, E; Kodys, P; Kohriki, T; Lee, S-C; Lester, C; Limper, M; Lindsay, S W; Lozano, M; Macwaters, C; Magrath, C; Mahout, G; Mandic, I; Matheson, J; McMahon, T; Mikulec, B; Muijs, A; Morrissey, M; Nichols, A; Nickerson, R; O'Shea, V; Pagenis, S; Parker, M; Pater, J; Perrin, E; Pernegger, H; Peeters, S; Phillips, P; Postranecky, M; Robinson, D; Robson, A; Rudge, A; Sandaker, H; Sedlak, K; Smith, N A; Stapnes, S; Stugu, B; Teng, P K; Terada, S; Tricoli, A; Tyndel, M; Ujiie, N; Ullán, M; Unno, Y; van der Kraaij, E; Van Vulpen, I; Viehhauser, G; Vossebeld, J H; Warren, M; Wastie, R; Weidberg, A; Wells, P; White, D; Wilson, J

    2007-01-01

    Optical links are used for the readout of the 4088 silicon microstrip modules that make up the SemiConductor Tracker of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The optical link requirements are reviewed, with particular emphasis on the very demanding environment at the LHC. The on-detector components have to operate in high radiation levels for 10 years, with no maintenance, and there are very strict requirements on power consumption, material and space. A novel concept for the packaging of the on-detector optoelectronics has been developed to meet these requirements. The system architecture, including its redundancy features, is explained and the critical on-detector components are described. The results of the extensive Quality Assurance performed during all steps of the assembly are discussed. Optical links are used for the readout of the 4088 silicon microstrip modules that make up the SemiConductor Tracker of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The optical ...

  16. Type II superlattice technology for LWIR detectors

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

    2016-05-01

    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

  17. Evaluation of the EDGE detector in small-field dosimetry

    Science.gov (United States)

    Shin, Hun-Joo; Kim, Myong-Ho; Choi, Ihl-Bohng; Kang, Young-nam; Kim, Dae-Hyun; Chio, Byung Ock; Jang, Hong Seok; Jung, Ji-Young; Son, Seok Hyun; Kay, Chul Seung

    2013-07-01

    This study evaluates a new diode detector design for small-field dosimetry. An accurate detector that has a small volume are necessary to compile data for stereotactic radiosurgery (SRS), stereotactic body radiotherapy (SBRT), and intensity-modulated radiotherapy (IMRT). Two semiconductor diode detectors and one ionization chamber were used to measure the profiles, percent depth doses (PDDs), and relative output factors (OFs) of a Novalis 6-MV SRS beam. Profiles and PDD data were collected using 5.0-, 10.0-, 15.0-, 20.0-, 30.0-, and 50.0-mm micro multileaf collimators (mMLCs) at small fields and a 98.0 × 98.0-mm2 reference field. OFs were collected for each of the mMLCs. The EDGE diode detector, the diode detector, and the ion chamber (0.007 cc) were used in the study. Detector measurements were performed using the 3D water phantom with a source-to-surface distance of 100-cm at a depth of 1.5-cm. The measurements were analyzed using the IBA OmniPro Accept 7th version software. In addition, all data were compared to Monte Carlo simulations. The semiconductor diodes had similar OFs and PDDs for each of the mMLCs used. The Dmax values of the EDGE diode detector, measured from the PDD, ranged from 8.5 to 14.0-mm with an average of 12.4-mm. The field widths of the EDGE diode detector were found to have similar values. The performance of the EDGE diode detector was comparable for all small-field measurements. Additionally, no evidence of an energy response was observed for the EDGE detectors for a field of 98 × 98-mm2. This is particularly important when measuring the relative OF for small fields or gathering larger-sized field data for the commissioning of a treatment planning system.

  18. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  19. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  20. Detector simulation needs for detector designers

    Energy Technology Data Exchange (ETDEWEB)

    Hanson, G.G.

    1987-11-01

    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers.

  1. A 77 K MOS magnetic field detector

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, R S; Torres, A. [Instituto Nacional de Astrofisica Optica y Electronica, Puebla (Mexico); Garcia, P.J. [Universidad Veracruzana, Veracruz (Mexico); Gutierrez, E.A. [Motorola, Puebla (Mexico)

    2001-12-01

    An integrated MOS (metal-oxide-semiconductor)-compatible magnetic field detector (split-drain MAGFET) for operation at liquid-nitrogen temperature LNT (77 K) is presented. The measured relative magnetic sensibility (S{sub a}) is approximately 14%/T (double the value ever reported) using a non-optimized MAGFET structure (W/L) = (100 mm/125 mm). The cryo-magnetic structure was tested without a built-in preamplifier. It presents a power consumption of the order of mW. [Spanish] A traves de este articulo se presenta un detector de campo magnetico (split-drain MAGFET), basado en el transistor de efecto de campo MOS (metal-oxido-semiconductor), y totalmente compatible con procesos de fabricacion de circuitos integrados CMOS. La operacion optima de este detector es a temperaturas criogenicas. Aqui se presentan los resultados experimentales de la caracterizacion de una estructura no optimizada con dimensiones (W / L) = (100 mm/125 mm) a la temperatura del nitrogeno liquido (77 K). La sensibilidad relativa medida es de cerca del 14 % T, casi el doble del valor maximo antes reportado en la literatura. El dispositivo se midio sin un pre-amplificador integrado, mostrando un consumo de potencia del orden de microwatts.

  2. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  3. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.

    1980-01-01

    Aspects of laser design and development are considered along with semiconductor materials for lasers, problems of device fabrication, crystal growth, the degradation of lasers, and the integration of semiconductor lasers with other optical components. A description is presented of light emission processes and laser action in semiconductors, taking into account electronic radiative transitions, the relation between emission and absorption processes, transition probabilities, the density of electron states in the highly doped semiconductor, carrier recombination and spontaneous emission, the gain/current relation, light-current characteristics, optical modes, and the evolution of mode spectrum and intensity with current. Attention is given to laser heterostructures and the properties of heterojunctions, optical waveguides, the performance of heterostructure lasers, stripe geometry lasers, and the dynamic response of lasers. Lasers with distributed feedback and Bragg reflectors are also discussed.

  4. Energy transfer with semiconductor nanocrystals

    NARCIS (Netherlands)

    Rogach, A.L.; Klar, T.A.; Lupton, J.M.; Meijerink, A.; Feldmann, J.

    2009-01-01

    Fo¨ rster (or fluorescence) resonant energy transfer (FRET) is a powerful spectroscopic technique to study interactions, conformational and distance changes, in hybrid nanosystems. Semiconductor nanocrystals, also known as colloidal quantum dots, are highly efficient fluorophores with a strong

  5. Ballistic superconductivity in semiconductor nanowires

    NARCIS (Netherlands)

    Zhang, H.; Gül, Ö.; Conesa-Boj, S.; Nowak, M.P.; Wimmer, M.; Zuo, K.; Mourik, V.; Vries, F.K. de; Veen, J. van; Moor, M.W.A. de; Bommer, J.D.S.; Woerkom, D.J. van; Car, D.; Plissard, S.R.; Bakkers, E.P.A.M.; Quintero Pérez, M.; Cassidy, M.C.; Koelling, S.; Goswami, S.; Watanabe, K.; Taniguchi, T.; Kouwenhoven, L.P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of

  6. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  7. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  8. It must be hard to stay so close

    CERN Multimedia

    Rossi, L

    The ATLAS pixel detector should operate for many years at a few centimeters from the LHC collision region. Every part of the detector should then be radiation hard to levels exceeding 500 KGy. This requirement is particularly difficult to meet for the active parts of the detectors, namely the sensors and the electronics. While the pixel sensors have already proven to be rad-hard, the electronics, being more complex, have required a longer development period. It is then with understandable excitement that the pixel collaboration begun to test the first samples of rad-hard electronics developed in Deep Sub Micron (DSM), a technology where the very pure and thin oxides minimize the transistor voltage threshold variation with irradiation. The first DSM 8" wafers have been delivered in January 2002, after a long and intense design activity lead by Kevin Einsweiler. Several laboratories did contribute to the design of the electronics: the Front End chip has been developed by Bonn, CPPM and LBNL, the Module Contro...

  9. Semiconductor packaging materials interaction and reliability

    CERN Document Server

    Chen, Andrea

    2012-01-01

    In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how

  10. Hard photoproduction at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Klasen, M. [Laboratoire de Physique Subatomique et de Cosmologie, Universite Joseph Fourier / CNRS-IN2P3, 53 Avenue des Martyrs, F-38026 Grenoble (France)

    2007-07-01

    In view of possible photoproduction studies in ultra-peripheral heavy-ion collisions at the LHC, we briefly review the present theoretical understanding of photons and hard photoproduction processes at HERA, discussing the production of jets, light and heavy hadrons, quarkonia, and prompt photons. We address in particular the extraction of the strong coupling constant from photon structure function and inclusive jet measurements, the infrared safety and computing time of jet definitions, the sensitivity of di-jet cross sections on the parton densities in the photon, factorization breaking in diffractive di-jet production, the treatment of the heavy-quark mass in charm production, the relevance of the color-octet mechanism for quarkonium production, and isolation criteria for prompt photons. (author)

  11. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  12. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  13. Nonlinear Optical Interactions in Semiconductors.

    Science.gov (United States)

    1985-12-10

    Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

  14. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  15. Development, prototyping and characterization of double sided silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Topkar, Anita, E-mail: anita@barc.gov.in; Singh, Arvind; Aggarwal, Bharti; Kumar, Amit; Kumar, Arvind; Murali Krishna, L.V.; Das, D.

    2016-10-21

    Double sided DC-coupled silicon strip detectors with geometry of 65 mm×65 mm have been developed in India for nuclear physics experiments. The detectors have 64 P{sup +} strips on the front side and 64 N{sup +} strips on the backside with a pitch of 0.9 mm. These detectors were fabricated using a twelve mask layer process involving double sided wafer processing technology. Semiconductor process and device simulations were carried out in order to theoretically estimate the impact of important design and process parameters on the breakdown voltage of detectors. The performance of the first lot of prototype detectors has been studied using static characterization tests and using an alpha source. The characterization results demonstrate that the detectors have low leakage currents and good uniformity over the detector area of about 40 cm{sup 2}. Overview of the detector design, fabrication process, simulation results and initial characterization results of the detectors are presented in this paper.

  16. Janka hardness using nonstandard specimens

    Science.gov (United States)

    David W. Green; Marshall Begel; William Nelson

    2006-01-01

    Janka hardness determined on 1.5- by 3.5-in. specimens (2×4s) was found to be equivalent to that determined using the 2- by 2-in. specimen specified in ASTM D 143. Data are presented on the relationship between Janka hardness and the strength of clear wood. Analysis of historical data determined using standard specimens indicated no difference between side hardness...

  17. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  18. Methods of measurement for semiconductor materials, process control, and devices

    Science.gov (United States)

    Bullis, W. M. (Editor)

    1972-01-01

    Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

  19. Prototype for a Radiation Hard Upgrade to the ATLAS ZDC

    CERN Document Server

    Phipps, Michael William; The ATLAS collaboration

    2017-01-01

    Increases in luminosity and collision energy at the LHC challenge the radiation hardness of detectors located along the beamline. This problem is especially acute for the Zero Degree Calorimeters (ZDCs) in ATLAS, which are exposed to around 10^{10} rad/yr, rendering the current version of the detector inviable during p+p running. To address this shortcoming and allow for important triggers and potential access to low-x physics, we designed a prototype detector that replaces quartz radiator material with a circulating, liquid hydrocarbon. It also features a dual-stage wavelength shifting scheme to transport light to silicon photo-multipliers, as well as both transverse and longitudinal segmentation to study the shower development in two dimensions. Design considerations, results from an SPS beam test and comparisons to GEANT simulation will be presented.

  20. 2TB hard disk drive

    CERN Multimedia

    This particular object was used up until 2012 in the Data Centre. It slots into one of the Disk Server trays. Hard disks were invented in the 1950s. They started as large disks up to 20 inches in diameter holding just a few megabytes (link is external). They were originally called "fixed disks" or "Winchesters" (a code name used for a popular IBM product). They later became known as "hard disks" to distinguish them from "floppy disks (link is external)." Hard disks have a hard platter that holds the magnetic medium, as opposed to the flexible plastic film found in tapes and floppies.