WorldWideScience

Sample records for hafnium nitrides

  1. Separation of zirconium--hafnium by nitride precipitation

    International Nuclear Information System (INIS)

    Anderson, R.N.; Parlee, N.A.

    1977-01-01

    A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

  2. Influence of plastic deformation on nitriding of a molybdenum-hafnium alloy

    International Nuclear Information System (INIS)

    Lakhtin, Yu.M.; Kogan, Ya.D.; Shashkov, D.P.; Likhacheva, T.E.

    1982-01-01

    The influence of a preliminary plastic strain on the structure and properties of molybdenum alloy with 0.2 wt.% Hf upon nitriding in the ammonia medium at 900-1200 deg C during 1-6 h is investigated. The study of microhardness distribution across the nitrided layer thickness has shown that with increase of the degree of preliminary plastic strain up to 50 % the nitrided layer hardness decreases and with further reduction growth up to 90 % - increases. Nitriding sharply (hundred times) increases wear resistance of molybdenum alloy with hafnium addition. At the reduction degree 25 % the wear resistance is less than at other values of percentage reduction in area owing to the minimum thickness of the nitride zone. The alloy strained before nitriding by 25 % has shown the best results during heat resistance testing

  3. Corrosion resistant surface for vanadium nitride and hafnium nitride layers as function of grain size

    Science.gov (United States)

    Escobar, C. A.; Caicedo, J. C.; Aperador, W.

    2014-01-01

    In this research it was studied vanadium nitride (VN) and hafnium nitride (HfN) film, which were deposited onto silicon (Si (100)) and AISI 4140 steel substrates via r.f. magnetron sputtering technique in Ar/N2 atmosphere with purity at 99.99% for both V and Hf metallic targets. Both films were approximately 1.2±0.1 μm thick. The crystallography structures that were evaluated via X-ray diffraction analysis (XRD) showed preferential orientations in the Bragg planes VN (200) and HfN (111). The chemical compositions for both films were characterized by EDX. Atomic Force Microscopy (AFM) was used to study the morphology; the results reveal grain sizes of 78±2 nm for VN and 58±2 nm for HfN and roughness values of 4.2±0.1 nm for VN and 1.5±0.1 nm for HfN films. The electrochemical performance in VN and HfN films deposited onto steel 4140 were studied by Tafel polarization curves and impedance spectroscopy methods (EIS) under contact with sodium chloride at 3.5 wt% solution, therefore, it was found that the corrosion rate decreased about 95% in VN and 99% for HfN films in relation to uncoated 4140 steel, thus demonstrating, the protecting effect of VN and HfN films under a corrosive environment as function of morphological characteristics (grain size). VN(grain size)=78±2.0 nm, VN(roughness)=4.2±0.1 nm, VN(corrosion rate)=40.87 μmy. HfN(grain size)=58±2.0 nm, HfN(roughness)=1.5±0.1 nm, HfN(corrosion rate)=0.205 μmy. It was possible to analyze that films with larger grain size, can be observed smaller grain boundary thus generating a higher corrosion rate, therefore, in this work it was found that the HfN layer has better corrosion resistance (low corrosion rate) in relation to VN film which presents a larger grain size, indicating that the low grain boundary in (VN films) does not restrict movement of the Cl- ion and in this way the corrosion rate increases dramatically.

  4. Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

    Science.gov (United States)

    Mora, M.; Vera, E.; Aperador, W.

    2016-02-01

    In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

  5. Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

    International Nuclear Information System (INIS)

    Mora, M; Vera, E; Aperador, W

    2016-01-01

    In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers. (paper)

  6. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  7. Ferroelectricity in undoped hafnium oxide

    International Nuclear Information System (INIS)

    Polakowski, Patrick; Müller, Johannes

    2015-01-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

  8. Metallurgy of zirconium and hafnium

    International Nuclear Information System (INIS)

    Baryshnikov, N.V.; Geger, V.Eh.; Denisova, N.D.; Kazajn, A.A.; Kozhemyakin, V.A.; Nekhamkin, L.G.; Rodyakin, V.V.; Tsylov, Yu.A.

    1979-01-01

    Considered are those properties of zirconium and of hafnium, which are of practical interest for the manufacture of these elements. Systematized are the theoretical and the practical data on the procedures for thermal decomposition of zirconia and for obtaining zirconium dioxide and hafnium dioxide by a thermal decomposition of compounds and on the hydrometallurgical methods for extracting zirconium and hafnium. Zirconium and hafnium fluorides and chlorides production procedures are described. Considered are the iodide and the electrolytic methods of refining zirconium and hafnium

  9. SEPARATING HAFNIUM FROM ZIRCONIUM

    Science.gov (United States)

    Lister, B.A.J.; Duncan, J.F.

    1956-08-21

    A dilute aqueous solution of zirconyl chloride which is 1N to 2N in HCl is passed through a column of a cation exchange resin in acid form thereby absorbing both zirconium and associated hafnium impurity in the mesin. The cation exchange material with the absorbate is then eluted with aqueous sulfuric acid of a O.8N to 1.2N strength. The first portion of the eluate contains the zirconium substantially free of hafnium.

  10. Commercial production of metal hafnium and hafnium-based products

    International Nuclear Information System (INIS)

    Negodin, D.A.; Shtutsa, M.G.; Akhtonov, S.G.; Il'enko, E.V.; Kobyzev, A.M.

    2012-01-01

    Hafnium possesses a unique complex of physical and chemical properties which allow the application of products on its basis in various industries. Joint Stock Company 'Chepetsky Mechanical Plant' is the single enterprise which produces hafnium on the territory of Russia. The manufacture of metal hafnium with the total content of zirconium and hafnium, at least, 99,8 % of weights is developed at the present time at Joint Stock Company CHMZ. The weight of melted hafnium ingots is up to 1 ton. Manufacture of wide range of products from hafnium is implemented. The plates from a hafnium with thickness of 0.60 mm which are used for emergency control cartridges of VVER-440 reactors are the most critical product. It is shown that ingots and products obtained from metal hafnium correspond to the Russian and international standards for reactor materials in chemical composition, mechanical and corrosion properties.

  11. Nanomechanical properties of hafnium nitride coating

    International Nuclear Information System (INIS)

    Chen Yao; Laha, Tapas; Balani, Kantesh; Agarwal, Arvind

    2008-01-01

    Nanomechanical properties of plasma-sprayed HfN coating with and without hot isostatic pressing (HIP) treatment were evaluated using nanoindentation. For HIPed HfN coating, the elastic modulus (E) and yield strength increase whereas the hardness (H), H/E ratio and fraction of the elastic work decrease. HIPed HfN coating shows a larger pile-up around the indent as compared to as-sprayed HfN. HIPing causes densification and improvement in inter-splat bonding which subsequently lead to increase in nanomechanical properties

  12. Zirconium and hafnium

    Science.gov (United States)

    Jones, James V.; Piatak, Nadine M.; Bedinger, George M.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Zirconium and hafnium are corrosion-resistant metals that are widely used in the chemical and nuclear industries. Most zirconium is consumed in the form of the main ore mineral zircon (ZrSiO4, or as zirconium oxide or other zirconium chemicals. Zirconium and hafnium are both refractory lithophile elements that have nearly identical charge, ionic radii, and ionic potentials. As a result, their geochemical behavior is generally similar. Both elements are classified as incompatible because they have physical and crystallochemical properties that exclude them from the crystal lattices of most rock-forming minerals. Zircon and another, less common, ore mineral, baddeleyite (ZrO2), form primarily as accessory minerals in igneous rocks. The presence and abundance of these ore minerals in igneous rocks are largely controlled by the element concentrations in the magma source and by the processes of melt generation and evolution. The world’s largest primary deposits of zirconium and hafnium are associated with alkaline igneous rocks, and, in one locality on the Kola Peninsula of Murmanskaya Oblast, Russia, baddeleyite is recovered as a byproduct of apatite and magnetite mining. Otherwise, there are few primary igneous deposits of zirconium- and hafnium-bearing minerals with economic value at present. The main ore deposits worldwide are heavy-mineral sands produced by the weathering and erosion of preexisting rocks and the concentration of zircon and other economically important heavy minerals, such as ilmenite and rutile (for titanium), chromite (for chromium), and monazite (for rare-earth elements) in sedimentary systems, particularly in coastal environments. In coastal deposits, heavy-mineral enrichment occurs where sediment is repeatedly reworked by wind, waves, currents, and tidal processes. The resulting heavy-mineral-sand deposits, called placers or paleoplacers, preferentially form at relatively low latitudes on passive continental margins and supply 100 percent of

  13. SEPARATION OF HAFNIUM FROM ZIRCONIUM

    Science.gov (United States)

    Overholser, L.B.; Barton, C.J. Sr.; Ramsey, J.W.

    1960-05-31

    The separation of hafnium impurities from zirconium can be accomplished by means of organic solvent extraction. The hafnium-containing zirconium feed material is dissolved in an aqueous chloride solution and the resulting solution is contacted with an organic hexone phase, with at least one of the phases containing thiocyanate. The hafnium is extracted into the organic phase while zirconium remains in the aqueous phase. Further recovery of zirconium is effected by stripping the onganic phase with a hydrochloric acid solution and commingling the resulting strip solution with the aqueous feed solution. Hexone is recovered and recycled by means of scrubbing the onganic phase with a sulfuric acid solution to remove the hafnium, and thiocyanate is recovered and recycled by means of neutralizing the effluent streams to obtain ammonium thiocyanate.

  14. Calorimetric measurements on hafnium titanate

    International Nuclear Information System (INIS)

    Kandan, R.; Prabhakara Reddy, B.; Panneerselvam, G.; Nagarajan, K.

    2012-01-01

    Owing to its desirable nuclear and mechanical properties such as good absorption cross-section for thermal neutrons (105 barns), hafnium titanate (HfTiO 4 ) finds application as control rods for nuclear reactors. An accurate knowledge of the thermo physical properties of this material is necessary for design of control rod and for modeling its performance. Heat capacity is an important thermodynamic property that determines the temperature dependent variation of all other thermodynamic properties. Hence enthalpy increments of hafnium titanate (HfTiO 4 ) were measured in the temperature range 803-1663 K by employing the method of inverse drop calorimetry using high temperature differential calorimeter

  15. Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

    Science.gov (United States)

    Li, Min

    High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a

  16. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  17. Hafnium isotope stratigraphy of ferromanganese crusts

    Science.gov (United States)

    Lee; Halliday; Hein; Burton; Christensen; Gunther

    1999-08-13

    A Cenozoic record of hafnium isotopic compositions of central Pacific deep water has been obtained from two ferromanganese crusts. The crusts are separated by more than 3000 kilometers but display similar secular variations. Significant fluctuations in hafnium isotopic composition occurred in the Eocene and Oligocene, possibly related to direct advection from the Indian and Atlantic oceans. Hafnium isotopic compositions have remained approximately uniform for the past 20 million years, probably reflecting increased isolation of the central Pacific. The mechanisms responsible for the increase in (87)Sr/(86)Sr in seawater through the Cenozoic apparently had no effect on central Pacific deep-water hafnium.

  18. Kinetic parameters of nitridation of molybdenum and niobium alloys with various structure states

    International Nuclear Information System (INIS)

    Solodkin, G.A.; Bulgach, A.A.; Likhacheva, T.E.

    1985-01-01

    Effect of preliminary plastic strain under rolling on kinetic parameters of nitridation of VN-2AEh, VN-3 niobium alloys and molybdenum alloy with hafnium is investigated. Extreme character of dependence of kinetic parameters of nitridation on the degree of reduction under rolling is determined. Preliminary plastic strain at negligible reduction is shown to accelerate growth of the zone of internal nitridation and decelerates growth of the nitride zone. Nitrogen atom removal from the surface to the centre is retarded at the increase of the degree of reduction up to 50% and higher. The degree of deformations is the higher the lower nitridation temperature is

  19. Study of fine structure of deformed hafnium

    International Nuclear Information System (INIS)

    Voskresenskaya, L.A.; Petukhova, A.S.; Kovalev, K.S.

    1978-01-01

    Variations in the hafnium fine structure following the cold plastic deformation have been studied. The fine structure condition has been studied through the harmonic analysis of the profile of the X-ray diffraction line, obtained at the DRON-I installation. Received has been the dependence of the crystal lattice microdistortions value on the deformation extent for hafnium. This dependence is compared with the corresponding one for zirconium. It is found out that at all the deformations the microdistortion distribution is uniform. The microdistortion value grows with the increase in the compression. During the mechanical impact higher microdistortions of the crystal lattice occur in the hafnium rather than in zirconium

  20. Hafnium - material for chemical apparatus engineering

    International Nuclear Information System (INIS)

    Jennert, D.

    1981-01-01

    This work describes - on the background of available literature - the properties of hafnium in technical quality (DIN-material No. 2.6400) as material for chemical apparatus engineering. The occurence, refining, physical and chemical properties will be described as well as the material behavior. In conclusion, it has been found that there is, at present, sufficient information for the engineering of hafnium which has to be completed by additional investigations for special applications. (orig.) [de

  1. Crystal structures of superconducting sodium intercalates of hafnium nitride chloride

    International Nuclear Information System (INIS)

    Oro-Sole, J.; Frontera, C.; Beltran-Porter, D.; Lebedev, O.I.; Van Tendeloo, G.; Fuertes, A.

    2006-01-01

    Sodium intercalation compounds of HfNCl have been prepared at room temperature in naphtyl sodium solutions in tetrahydrofuran and their crystal structure has been investigated by Rietveld refinement using X-ray powder diffraction data and high-resolution electron microscopy. The structure of two intercalates with space group R3-bar m and lattice parameters a=3.58131(6)A, c=57.752(6)A, and a=3.58791(8)A, c=29.6785(17)A is reported, corresponding to the stages 2 and 1, respectively, of Na x HfNCl. For the stage 2 phase an ordered model is presented, showing two crystallographically independent [HfNCl] units with an alternation of the Hf-Hf interlayer distance along the c-axis, according with the occupation by sodium atoms of one out of two van der Waals gaps. Both stages 1 and 2 phases are superconducting with critical temperatures between 20 and 24K, they coexist in different samples with proportions depending on the synthesis conditions, and show a variation in c spacing that can be correlated with the sodium stoichiometry. High-resolution electron microscopy images of the host and intercalated samples show bending of the HfNCl bilayers as well as stacking faults in some regions, which coexist in the same crystal with ordered domains

  2. Determination of hafnium by atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Yoshida, Isao; Kobayashi, Hiroshi; Ueno, Keihei.

    1977-01-01

    Optimum conditions for atomic absorption spectrophotometric determination of hafnium were investigated by use of a Jarrel-Ash AA-1 instrument which was equipped with a premixed gas burner slotted 50 mm in length and 0.4 mm in width. Absorption of hafnium, which was atomized in an nitrous oxide-acetylene flame, was measured on a resonance line at 307.29 nm. The absorption due to hafnium was enhanced in the presence of ammonium fluoride and iron(III) ion, as shown in Figs. 2 and 3, depending on their concentration. The highest absorption was attained by the addition of (0.15 -- 0.3)M ammonium fluoride, 0.07 M of iron(III) ion and 0.05 M of hydrochloric acid. An excess of the additives decreased the absorption. The presence of zirconium, which caused a significant interference in the ordinary analytical methods, did not affect the absorption due to hafnium, if the zirconium concentration is less than 0.2 M. A standard procedure was proposed; A sample containing a few mg of hafnium was dissolved in a 25-ml volumetric flask, and ammonium fluoride, ferric nitrate and hydrochloric acid were added so that the final concentrations were 0.3, 0.07 and 0.05 M, respectively. Atomic absorption was measured on the aqueous solution in a nitrous oxide-acetylene flame and the hafnium content was calculated from the absorbance. Sensitivity was as high as 12.5 μg of Hf/ml/l% absorption. The present method is especially recommendable to the direct determination of hafnium in samples containing zirconium. (auth.)

  3. Titanium(IV), zirconium, hafnium and thorium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Titanium can exist in solution in a number of oxidation states. The titanium(IV) exists in acidic solutions as the oxo-cation, TiO 2+ , rather than Ti 4+ . Zirconium is used in the ceramics industry and in nuclear industry as a cladding material in reactors where its reactivity towards hydrolysis reactions and precipitation of oxides may result in degradation of the cladding. In nature, hafnium is found together with zirconium and as a consequence of the contraction in ionic radii that occurs due to the 4f -electron shell, the ionic radius of hafnium is almost identical to that of zirconium. All isotopes of thorium are radioactive and, as a consequence of it being fertile, thorium is important in the nuclear fuel cycle. The polymeric hydrolysis species that have been reported for thorium are somewhat different to those identified for zirconium and hafnium, although thorium does form the Th 4 (OH) 8 8+ species.

  4. Gravimetric determination of hafnium through its arsenate in carbide and boride of hafnium

    International Nuclear Information System (INIS)

    Rasulbekova, R.A.; Mamedov, I.A.

    1976-01-01

    A gravimetric method of determining hafnium through hydroarsenate has been recommended. The method differs from the known ones by its simplicity and by the recalculation coefficient which is more than by 50% smaller than that used in preparing a weight form of HfO 2 . Upon development of gravimetric determination of hafnium through hydro-and pyroarsenate, an investigation has been conducted with the aim to find some physico-chemical constants of hafnium hydroarsenate. The weighed amount of hafnium hydroarsenate is dissolved in sulphuric acid (2:5). The precipitate of hafnium hydroarsenate has been studied for recording infrared absorption spectra. Thermographic analysis of the precipitate has been performed. Thermogram reveals endothermal effect at 105 deg C and exothermal at 840 deg C. Water solubility of hafnium has been determined equal to 1.75x10 6 g mol/l. The corresponding solubility product of the precipitate has been calculated which is 2.1x10 -17 . It is shown that the method possesses certain selectivity, sufficient accuracy, and is rather fast. It has been established that determination can be performed in the presence of excess amounts of ions

  5. Method of separating hafnium from zirconium

    International Nuclear Information System (INIS)

    Megy, J.A.

    1980-01-01

    English. A new anhydrous method was developed for separating zirconium and hafnium, which gives higher separation factors and is more economical than previous methods. A molten phase, comprising a solution of unseparated zirconium and hafnium and a solvent metal, is first prepared. The molten metal phase is contacted with a fused salt phase which includes a zirconium salt. Zirconium and hafnium separation is effected by mutual displacement with hafnium being transported from the molten metal phase to the fused salt phase, while zirconium is transported from the fused salt phase to the molten metal phase. The solvent metal is less electropositive than zirconium. Zinc was chosen as the solvent metal, from a group which also included cadmium, lead, bismuth, copper, and tin. The fused salt phase cations are more electropositive than zirconium and were selected from a group comprising the alkali elements, the alkaline earth elements, the rare earth elements, and aluminum. A portion of the zirconium in the molten metal phase was oxidized by injecting an oxidizing agent, chlorine, to form zirconium tetrachlorid

  6. Kinetic studies on the hafnium nad deuterium

    International Nuclear Information System (INIS)

    Bing Wenzeng; Long Xinggui; Zhu Zuliang

    2009-04-01

    Through the method of reaction rate analysis in a constant volume reactor, the time dependence of the pressure drop of the hafnium deuteride formation are studied over a temperature range 573-873 K on a metal hydride thermodynamic and kinetic parameters measuring apparatus. The rate constants of the hafnium deuteride formation, which are 0.0530 s -1 , 0.0452 s -1 , 0.0319 s -1 , 0.0261 s -1 , are calculated at a serial temperatures of 573 K, 673 K, 773 K, 873 K and the initial pressure of 13 kPa. The activation energy of the reaction is (-10.1±1.5) kJ·mol -1 . Comparing the above results with those of titanium deuteride formation on the same measuring apparatus, the kinetic mechanism of the deuteride formation of hafnium and titanium is considered different. It is concluded that the reaction rate of hafnium absorbing deuterium may be controlled by phase transformation and surface oxidation. (authors)

  7. Recovery of hafnium values from loaded extraction solvent

    International Nuclear Information System (INIS)

    Abodishish, H.A.

    1989-01-01

    This patent describes an improvement in a process for recovering high purity hafnium hydroxide from a methyl isobutyl ketone organic solvent that is substantially free of sulfate ions and contains hafnium thiocyanate and thiocyanic acid. The improvement comprising reacting the organic solvent with ammonia to produce a reaction product in the form of a methyl isobutyl ketone organic solvent that is substantially free of sulfate ions and contains ammonium thiocyanite solution and hafnium hydroxide; separating the constituents of the reaction product in accordance with their respective specific gravities to produce a hafnium hydroxide sludge as one of the separation products; and removing the liquid component of the sludge to yield a high purity hafnium hydroxide ready for calcination to hafnium oxide

  8. Flotation separation of hafnium(IV) from aqueous solutions

    International Nuclear Information System (INIS)

    Downey, D.M.; Narick, C.N.; Cohen, T.A.

    1985-01-01

    A simple, rapid method for the separation of hafnium from aqueous solutions was investigated using sup(175+181)Hf tracer. Cationic hafnium complex ions were floated from dilute acid solutions with sodium lauryl sulfate (SLS) and anionic hafnium complexes were floated from basic and oxalic acid solutions with hexadecyltrimethyl ammonium bromide (HTMAB). The conditions necessary for quantitative recovery of the metal and mechanisms of flotation are described. (author)

  9. Flotation separation of hafnium(IV) from aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Downey, D.M.; Narick, C.N.; Cohen, T.A.

    1985-09-01

    A simple, rapid method for the separation of hafnium from aqueous solutions was investigated using sup(175 + 181)Hf tracer. Cationic hafnium complex ions were floated from dilute acid solutions with sodium lauryl sulfate (SLS) and anionic hafnium complexes were floated from basic and oxalic acid solutions with hexadecyltrimethyl ammonium bromide (HTMAB). The conditions necessary for quantitative recovery of the metal and mechanisms of flotation are described. (author). 21 refs.; 5 figs.

  10. Titanium zirconium and hafnium coordination compounds with vanillin thiosemicarbazone

    International Nuclear Information System (INIS)

    Konunova, Ts.B.; Kudritskaya, S.A.

    1987-01-01

    Coordination compounds of titanium zirconium and hafnium tetrachlorides with vanillin thiosemicarbazone of MCl 4 x nLig composition, where n=1.5, 4 for titanium and 1, 2, 4 for zirconium and hafnium, are synthesized. Molar conductivity of ethanol solutions is measured; IR spectroscopic and thermochemical investigation are carried out. The supposition about ligand coordination via sulfur and azomethine nitrogen atoms is made. In all cases hafnium forms stable compounds than zirconium

  11. Niobium and hafnium grown on porous membranes

    International Nuclear Information System (INIS)

    Morant, C.; Marquez, F.; Campo, T.; Sanz, J.M.; Elizalde, E.

    2010-01-01

    In this work we report on a method for fabricating highly ordered nanostructures of niobium and hafnium metals by physical vapour deposition using two different templates: anodized aluminum oxide membranes (AAO) and zirconium onto AAO membranes (Zr/AAO). The growth mechanism of these metal nanostructures is clearly different depending on the material used as a template. A different morphology was obtained by using AAO or Zr/AAO templates: when the metal is deposited onto AAO membranes, nanospheres with ordered hexagonal regularity are obtained; however, when the metal is deposited onto a Zr/AAO template, highly ordered nanocones are formed. The experimental approach described in this work is simple and suitable for synthesizing nanospheres or nanoholes of niobium and hafnium metals in a highly ordered structure.

  12. Joint titrimetric determination of zirconium and hafnium

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Botbol, Moises; Bianco de Salas, G.N.; Cornell de Casas, M.I.

    1980-01-01

    A method for the joint titrimetric determination of zirconium and hafnium, which are elements of similar chemical behaviour, is described. The disodic salt of the ethylendiaminetetracetic acid (EDTA) is used for titration, while xilenol orange serves as final point indicator. Prior to titration it is important to evaporate with sulfuric acid, the solution resulting from the zirconium depolymerization process, to adjust the acidity and to eliminate any interferences. The method, that allows the quick and precise determination of zirconium and hafnium in quantities comprised between 0.01 and mg, was applied to the analysis of raw materials and of intermediate and final products in the fabrication of zirconium sponge and zircaloy. (M.E.L.) [es

  13. Molten salt scrubbing of zirconium or hafnium tetrachloride

    International Nuclear Information System (INIS)

    Lee, E.D.; McLaughlin, D.F.

    1990-01-01

    This patent describes a continuous process for removing impurities of iron or aluminum chloride or both from vaporous zirconium or hafnium chloride or both. It comprises: introducing impure zirconium or hafnium chloride vapor or both into a middle portion of an absorbing column containing a molten salt phase, the molten salt phase absorbing the impurities of iron or aluminum chloride or both to produce chloride vapor stripped of zirconium or hafnium chloride; introducing sodium or potassium chloride or both into a top portion of the column; controlling the top portion of the column to between 300--375 degrees C.; heating a bottom portion of the column to 450--550 degrees C. To vaporize zirconium chloride or hafnium chloride or hafnium and zirconium chloride from the molten salt; withdrawing molten salt substantially free of zirconium and hafnium chloride from the bottom portion of the column; and withdrawing zirconium chloride or hafnium chloride or hafnium and zirconium chloride vapor substantially free of impurities of iron and aluminum chloride from the top of the column

  14. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  15. Preparation of hafnium carbide by chemical vapor deposition

    International Nuclear Information System (INIS)

    Hertz, Dominique.

    1974-01-01

    Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr

  16. Assessing hafnium on hafnia as an oxygen getter

    International Nuclear Information System (INIS)

    O'Hara, Andrew; Demkov, Alexander A.; Bersuker, Gennadi

    2014-01-01

    Hafnium dioxide or hafnia is a wide band gap dielectric used in a range of electronic applications from field effect transistors to resistive memory. In many of these applications, it is important to maintain control over oxygen stoichiometry, which can be realized in practice by using a metal layer, specifically hafnium, to getter oxygen from the adjacent dielectric. In this paper, we employ density functional theory to study the thermodynamic stability of an interface between (100)-oriented monoclinic hafnia and hafnium metal. The nudged elastic band method is used to calculate the energy barrier for migration of oxygen from the oxide to the metal. Our investigation shows that the presence of hafnium lowers the formation energy of oxygen vacancies in hafnia, but more importantly the oxidation of hafnium through the migration of oxygen from hafnia is favored energetically

  17. Properties of filmogen solutions and films of hafnium compounds

    International Nuclear Information System (INIS)

    Sviridova, A.I.

    1986-01-01

    Study on hafnium hydrolizing compound solutions, used for hafnium oxide homogeneous layer formation, is conducted. In particular, electric conductivity, acidity and refractive index were investigated depending on the sal on ether concentration and the storage time. Oxyhafnium nitrate, hafnium chloride in ethanol, dichlorodiethoxyhafnium, hafnium oxychloride were used as initial compounds. Hydrolysis of hafnium compounds in solution occurs partially; further process occurs in the thin layer on the optical element surface; final decomposition is performed under heat treatment. It is ascertained, that alcoholic-aqueous solutions of inorganic salts can be filmogen only at definite acidity, density and viscosity (1.33-2.5 cp.). It is also ascertained that refractive index values and transmission spectral boundary of coatings, produced from alkoxy compound solutions and from chloride salt solutions, are practically the same. Transmittance boundary in ultraviolet region of spectrum of oxide films produced from nitrate and chloride solutions, varies with the heating temperature increase differently

  18. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  19. Analysis of hafnium in zirconium alloys

    International Nuclear Information System (INIS)

    Kondo, Isao; Sakai, Fumiaki; Ohuchi, Yoshifusa; Nakamura, Hisashi

    1977-01-01

    It is required to analyse alloying components and impurity elements in the acceptance analysis of zirconium alloys as the material for fuel cladding tubes and pressure tubes for advanced thermal reactors. Because of extreme similarity in chemical properties between zirconium and hafnium, about 100 ppm of hafnium is usually contained in zirconium alloys. Zircaloy-2 alloy and 2.5% Nb-zirconium with the addition of hafnium had been prepared as in-house standard samples for rapid analysis. Study was made on fluorescent X-ray analysis and emission spectral analysis to establish the analytical method. By using these in-house standard samples, acceptance analysis was successfully carried out for the fuel cladding tubes for advanced thermal reactors. Sulfuric acid solution was prepared from JAERI-Z 1, 2 and 3, the standard sample for zircaloy-2 prepared by the Analytical Committee on Nuclear Fuel and Reactor Materials, JAERI, and zirconium oxide (Hf 1 ppm/Zr). Standard Hf solution was added to the sulfuric acid solution step by step, to make up a series of the standard oxide samples by the precipitation process. By the use of these standard samples, the development of the analytical method and joint analysis were made by the three-member analytical technique research group including PNC. The analytical precision for the fluorescent X-ray analysis was improved by attaching a metallic yttrium filter to the window of an X-ray tube so as to suppress the effect due to zirconium matrix. The variation factor of the joint analysis was about 10% to show good agreement, and the indication value was determined. (Kobatake, H.)

  20. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  1. Primary hafnium metal sponge and other forms, approved standard 1973

    International Nuclear Information System (INIS)

    Anon.

    1975-01-01

    A specification is presented covering virgin hafnium metal commonly designated as sponge because of its porous, sponge-like texture; it may also be in other forms such as chunklets. The specification does not cover crystal bar

  2. Investigation of colourless complexes of thorium, hafnium and zirconium

    International Nuclear Information System (INIS)

    Kiciak, S.; Stefanowicz, T.; Gontarz, H.; Swit, Z.

    1980-01-01

    The investigations conducted in the Institute of General Chemistry of Poznan Technical University in partial cooperation with Kharkhof Technical University related with thorium, hafnium and zirconium complexes are reviewed. (author)

  3. Molten salt extractive distillation process for zirconium-hafnium separation

    International Nuclear Information System (INIS)

    McLaughlin, D.F.; Stoltz, R.A.

    1989-01-01

    This patent describes an improvement in a process for zirconium-hafnium separation. It utilizes an extractive distillation column with a mixture of zirconium and hafnium tetrachlorides introduced into a distillation column having a top and bottom with hafnium enriched overheads taken from the top of the column and a molten salt solvent circulated through the column to provide a liquid phase, and with molten salt solvent containing zirconium chloride being taken from the bottom of the distillation column. The improvements comprising: utilizing a molten salt solvent consisting principally of lithium chloride and at least one of sodium, potassium, magnesium and calcium chlorides; stripping of the zirconium chloride taken from the bottom of the distillation column by electrochemically reducing zirconium from the molten salt solvent; and utilizing a pressurized reflux condenser on the top of the column to add the hafnium chloride enriched overheads to the molten salt solvent previously stripped of zirconium chloride

  4. Internal Dosimetry for Inhalation of Hafnium Tritide Aerosols

    Energy Technology Data Exchange (ETDEWEB)

    Inkret, W.C.T.; Schillaci, M.E.; Boyce, M.K.; Cheng, Y.S.; Efurd, D.W.; Little, T.T.; Miller, G.; Musgrave, J.A.; Wermer, J.R

    2001-07-01

    Metal tritides with low dissolution rates may have residence times in the lungs which are considerably longer than the biological half-time normally associated with tritium in body water, resulting in long-term irradiation of the lungs by low energy {beta} particles and bremsstrahlung X rays. Samples of hafnium tritide were placed in a lung simulant fluid to determine approximate lung dissolution rates. Hafnium hydride samples were analysed for particle size distribution with a scanning electron microscope. Lung simulant data indicated a biological dissolution half-time for hafnium tritide on the order of 10{sup 5}d. Hafnium hydride particle sizes ranged between 2 and 10 {mu}m, corresponding to activity median aerodynamic diameters of 5 to 25 {mu}m. Review of in vitro dissolution data, development of a biokinetic model, and determination of secondary limits for 1 {mu}m AMAD particles are presented and discussed. (author)

  5. Hafnium Films and Magnetic Shielding for TIME, A mm-Wavelength Spectrometer Array

    Science.gov (United States)

    Hunacek, J.; Bock, J.; Bradford, C. M.; Butler, V.; Chang, T.-C.; Cheng, Y.-T.; Cooray, A.; Crites, A.; Frez, C.; Hailey-Dunsheath, S.; Hoscheit, B.; Kim, D. W.; Li, C.-T.; Marrone, D.; Moncelsi, L.; Shirokoff, E.; Steinbach, B.; Sun, G.; Trumper, I.; Turner, A.; Uzgil, B.; Weber, A.; Zemcov, M.

    2018-04-01

    TIME is a mm-wavelength grating spectrometer array that will map fluctuations of the 157.7-μm emission line of singly ionized carbon ([CII]) during the epoch of reionization (redshift z ˜ 5-9). Sixty transition-edge sensor (TES) bolometers populate the output arc of each of the 32 spectrometers, for a total of 1920 detectors. Each bolometer consists of gold absorber on a ˜ 3 × 3 mm silicon nitride micro-mesh suspended near the corners by 1 × 1 × 500 μm silicon nitride legs targeting a photon-noise-dominated NEP ˜ 1 × 10^{-17} W/√{Hz} . Hafnium films are explored as a lower-T_c alternative to Ti (500 mK) for TIME TESs, allowing thicker support legs for improved yield. Hf T_c is shown to vary between 250 and 450 mK when varying the resident Ar pressure during deposition. Magnetic shielding designs and simulations are presented for the TIME first-stage SQUIDs. Total axial field suppression is predicted to be 5 × 10^7.

  6. New solvent extraction process for zirconium and hafnium

    International Nuclear Information System (INIS)

    Takahashi, M.; Katoh, Y.; Miyazaki, H.

    1984-01-01

    The authors' company developed a new solvent extraction process for zirconium and hafnium separation, and started production of zirconium sponge by this new process in September 1979. The process utilizes selective extraction of zirconium oxysulfate using high-molecular alkyl amine, and has the following advantages: 1. This extraction system has a separation factor as high as 10 to 20 for zirconium and hafnium in the range of suitable acid concentration. 2. In the scrubbing section, removal of all the hafnium that coexists with zirconium in the organic solvent can be effectively accomplished by using scrubbing solution containing hafnium-free zirconium sulfate. Consequently, hafnium in the zirconium sponge obtained is reduced to less than 50 ppm. 3. The extractant undergoes no chemical changes but is very stable for a long period. In particular, its solubility in water is small, about 20 ppm maximum, posing no environmental pollution problems such as are often caused by other process raffinates. At the present time, the zirconium and hafnium separation operation is very stable, and zirconium sponge made by this process can be applied satisfactorily to nuclear reactors

  7. Separation process of zirconium and hafnium

    International Nuclear Information System (INIS)

    Hure, J.; Saint-James, R.

    1955-01-01

    About the separation different processes of zirconium-hafnium, the extraction by solvent in cross-current is the most easily the process usable on an industrial scale. It uses tributyl phosphate as solvent, diluted with white spirit to facilitate the decanting. Some exploratory tests showed that nitric environment seemed the most favorable for extraction; but a lot of other factors intervene in the separation process. We studied the influence of the acidity successively, the NO 3 - ions concentration, the role of the cation coming with NO 3 - , as well as the influence of the concentration of zirconium in the solution on the separation coefficient β = α Zr / α Hf . (M.B.) [fr

  8. The interaction of fast neutrons with hafnium

    International Nuclear Information System (INIS)

    Smith, A.B.

    2002-01-01

    Elemental hafnium neutron total cross sections are measured from ∼0.75 to 4.5 MeV in steps of ∼40 keV. Differential neutron elastic-scattering cross sections are measured from ∼4.5 to 10.0 MeV in ∼0.5 MeV steps and at 40 scattering angles distributed between ∼17 and 160 deg. These data are combined with those found in the literature to construct a comprehensive experimental data base which is interpreted in terms of coupled-channels models. Physical characteristics of the resulting potentials are discussed. Comparisons are made with ENDF/B-6 (MAT 7200). A detailed report of this work is given by Smith (Smith, A., 2001. Argonne National Laboratory Report ANL/NDM-153)

  9. High temperature diffusion of hafnium in tungsten and a tungsten-hafnium carbide alloy

    International Nuclear Information System (INIS)

    Ozaki, Y.; Zee, R.H.

    1994-01-01

    Refractory metals and ceramics are used extensively in energy systems due to their high temperature properties. This is particularly important in direct conversion systems where thermal to electric conversion efficiency is a direct function of temperature. Tungsten, which has the highest melting temperature among elemental metals, does not possess sufficient creep resistance at temperature above 1,600 K. Different dispersion strengthened tungsten alloys have been developed to extend the usefulness of tungsten to higher temperatures. One of these alloys, tungsten with 0.4 mole percent of finely dispersed HfC particles (W-HfC), has the optimum properties for high temperature applications. Hafnium carbide is used as the strengthening agent due to its high chemical stability and its compatibility with tungsten. The presence of HfC particles retards the rate of grain growth as well as restricting dislocation motion. Both of which are beneficial for creep resistance. The long term behavior of this alloy depends largely on the evolution of its microstructure which is governed by the diffusion of its constituents. Data on the diffusion of carbon in tungsten and tungsten self-diffusion are available, but no direct measurements have been made on the diffusion of hafnium in tungsten. The only diffusion data available are estimated from a coarsening study and these data are highly unreliable. In this study, the diffusion behavior of hafnium in pure tungsten and in a W-HfC alloy was directly measured by means of Secondary Ion Mass Spectroscopy (SIMS). The selection of the W-HfC alloy is due to its importance in high temperature engineering applications, and its higher recrystallization temperature. The presence of HfC particles in tungsten restricts grain growth resulting in better high temperature creep resistance. The higher recrystallization temperature allows measurements to be made over a wider range of temperatures at a relatively constant grain size

  10. 40 CFR 471.90 - Applicability; description of the zirconium-hafnium forming subcategory.

    Science.gov (United States)

    2010-07-01

    ... zirconium-hafnium forming subcategory. 471.90 Section 471.90 Protection of Environment ENVIRONMENTAL... POINT SOURCE CATEGORY Zirconium-Hafnium Forming Subcategory § 471.90 Applicability; description of the zirconium-hafnium forming subcategory. This subpart applies to discharges of pollutants to waters of the...

  11. 40 CFR 421.330 - Applicability: Description of the primary zirconium and hafnium subcategory.

    Science.gov (United States)

    2010-07-01

    ... primary zirconium and hafnium subcategory. 421.330 Section 421.330 Protection of Environment ENVIRONMENTAL... CATEGORY Primary Zirconium and Hafnium Subcategory § 421.330 Applicability: Description of the primary zirconium and hafnium subcategory. The provisions of this subpart are applicable to discharges resulting...

  12. Ground-state structures of Hafnium clusters

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Wei Chun; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technoloty, Multimedia University, Melaca Campus, 75450 Melaka (Malaysia)

    2015-04-24

    Hafnium (Hf) is a very large tetra-valence d-block element which is able to form relatively long covalent bond. Researchers are interested to search for substitution to silicon in the semi-conductor industry. We attempt to obtain the ground-state structures of small Hf clusters at both empirical and density-functional theory (DFT) levels. For calculations at the empirical level, charge-optimized many-body functional potential (COMB) is used. The lowest-energy structures are obtained via a novel global-minimum search algorithm known as parallel tempering Monte-Carlo Basin-Hopping and Genetic Algorithm (PTMBHGA). The virtue of using COMB potential for Hf cluster calculation lies in the fact that by including the charge optimization at the valence shells, we can encourage the formation of proper bond hybridization, and thus getting the correct bond order. The obtained structures are further optimized using DFT to ensure a close proximity to the ground-state.

  13. Hafnium carbide nanocrystal chains for field emitters

    International Nuclear Information System (INIS)

    Tian, Song; Li, Hejun; Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang

    2014-01-01

    A hafnium carbide (HfC) nanostructure, i.e., HfC nanocrystal chain, was synthesized by a chemical vapor deposition (CVD) method. X-ray diffractometer, field-emission scanning electron microscope, transmission electron microscope, and energy-dispersive X-ray spectrometer were employed to characterize the product. The synthesized one-dimensional (1D) nanostructures with many faceted octahedral nanocrystals possess diameters of tens of nanometers to 500 nm and lengths of a few microns. The chain-like structures possess a single crystalline structure and preferential growth direction along the [1 0 0] crystal orientation. The growth of the chains occurred through the vapor–liquid–solid process along with a negative-feedback mechanism. The field emission (FE) properties of the HfC nanocrystal chains as the cold cathode emitters were examined. The HfC nanocrystal chains display good FE properties with a low turn-on field of about 3.9 V μm −1 and a high field enhancement factor of 2157, implying potential applications in vacuum microelectronics.

  14. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  15. Use of hafnium in control bars of nuclear reactors

    International Nuclear Information System (INIS)

    Ramirez S, J.R.; Alonso V, G.

    2003-01-01

    Recently the use of hafnium as neutron absorber material in nuclear reactors has been reason of investigation by virtue of that this material has nuclear properties as to the neutrons absorption and structural that can prolong the useful life of the control mechanisms of the nuclear reactors. In this work some of those more significant hafnium properties are presented like nuclear material. Also there are presented calculations carried out with the HELIOS code for fuel cells of uranium oxide and of uranium and plutonium mixed oxides under controlled conditions with conventional bars of boron carbide and also with similar bars to which are substituted the absorbent material by metallic hafnium, the results are presented in this work. (Author)

  16. Analytical study of zirconium and hafnium α-hydroxy carboxylates

    International Nuclear Information System (INIS)

    Terra, V.R.

    1991-01-01

    The analytical study of zirconium and hafnium α-hydroxy carboxylates was described. For this purpose dl-mandelic, dl-p-bromo mandelic, dl-2-naphthyl glycolic, and benzilic acids were prepared. These were used in conjunction with glycolic, dl-lactic, dl-2-hydroxy isovaleric, dl-2-hydroxy hexanoic, and dl-2-hydroxy dodecanoic acids in order to synthesize the zirconium(IV) and hafnium(IV) tetrakis(α-hydroxy carboxylates). The compounds were characterized by melting point determination, infrared spectroscopy, thermogravimetric analysis, calcination to oxides and X-ray diffractometry by the powder method. (C.G.C)

  17. High temperature evaporation of titanium, zirconium and hafnium carbides

    International Nuclear Information System (INIS)

    Gusev, A.I.; Rempel', A.A.

    1991-01-01

    Evaporation of cubic nonstoichiometric carbides of titanium, zirconium and hafnium in a comparatively low-temperature interval (1800-2700) with detailed crystallochemical sample certification is studied. Titanium carbide is characterized by the maximum evaporation rate: at T>2300 K it loses 3% of sample mass during an hour and at T>2400 K titanium carbide evaporation becomes extremely rapid. Zirconium and hafnium carbide evaporation rates are several times lower than titanium carbide evaporation rates at similar temperatures. Partial pressures of metals and carbon over the carbides studied are calculated on the base of evaporation rates

  18. Preparation of complexes of zirconium and hafnium tetrachlorides with phosphorus oxychloride

    International Nuclear Information System (INIS)

    McLaughlin, D.F.

    1989-01-01

    This patent describes an improvement in a method for separating hafnium tetrachloride from zirconium tetrachloride where a complex of zirconium-hafnium tetrachlorides and phosphorus oxychloride is prepared from zirconium-hafnium tetrachlorides and the complex of zirconium-hafnium tetrachlorides and phosphorus oxychloride is introduced into a distillation column, which distillation column has a reboiler connected at the bottom and a reflux condenser connected at the top and where a hafnium tetrachloride enriched stream is taken from the top of the column and a zirconium enriched tetrachloride stream is taken from the bottom of the column. The improvement comprising: prepurifying the zirconium-hafnium tetrachlorides, prior to preparation of the complex and introduction of the complex into a distillation column, to substantially eliminate iron chloride from the zirconium hafnium tetrachlorides, whereby buildup or iron chloride in the distillation column and in the reboiler is substantially eliminated and the column can be operated in a continuous, stable and efficient manner

  19. Separation process of zirconium and hafnium; Procede de separation du zirconium et du hafnium

    Energy Technology Data Exchange (ETDEWEB)

    Hure, J; Saint-James, R [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1955-07-01

    About the separation different processes of zirconium-hafnium, the extraction by solvent in cross-current is the most easily the process usable on an industrial scale. It uses tributyl phosphate as solvent, diluted with white spirit to facilitate the decanting. Some exploratory tests showed that nitric environment seemed the most favorable for extraction; but a lot of other factors intervene in the separation process. We studied the influence of the acidity successively, the NO{sub 3}{sup -} ions concentration, the role of the cation coming with NO{sub 3}{sup -}, as well as the influence of the concentration of zirconium in the solution on the separation coefficient {beta} = {alpha}{sub Zr} / {alpha}{sub Hf}. (M.B.) [French] Des differents procedes de separation zirconium-hafnium, l'extraction par solvant en contre-courant est le procede le plus facilement utilisable a l'echelle industrielle. On utilise comme solvant le phosphate de tributyle, dilue avec du white spirit pour faciliter les decantations. Des essais preliminaires ont montre que le milieu nitrique semblait le plus favorable a l'extraction; mais beaucoup d'autres facteurs interviennent dans le processus de separation. Nous avons etudie successivement l'influence de l'acidite, celle de la concentration en ions NO{sub 3}{sup -}, le role du cation accompagnant NO{sub 3}{sup -}, ainsi que l'influence de la concentration en zirconium de la solution sur le coefficient de separation {beta} = {alpha}{sub Zr} / {alpha}{sub Hf}. (MB)

  20. Separation of zirconium and hafnium using paper distribution chromatography

    International Nuclear Information System (INIS)

    Lebedeva, G.G.; Viktorova, M.E.

    1981-01-01

    A method is suggested of chromatographic separation of zirconium and hafnium in a CCl 4 -tributyl phosphate system (1:9) containing KCl as a salting-out agent in 5 M HNO 3 at 28-30 deg C. Zr and Hf are deterfmined in articiial mixtures under optimal chromatography conditions using visual colorimetry [ru

  1. X-Ray Photoemission Study of the Oxidation of Hafnium

    International Nuclear Information System (INIS)

    Chourasia, R.; Hickman, J.L.; Miller, R.L.; Nixon, G.A.; Seabolt, M.A.

    2011-01-01

    About 20 angstrom of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300 degree C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600 degree C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO 2 at substrate temperature around 300 degree C for the first type of samples and at substrate temperature greater than 550 degree C for the second type

  2. X-Ray Photoemission Study of the Oxidation of Hafnium

    Directory of Open Access Journals (Sweden)

    A. R. Chourasia

    2009-01-01

    Full Text Available About 20 Å of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300∘C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600∘C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO2 at substrate temperature around 300∘C for the first type of samples and at substrate temperature greater than 550∘C for the second type.

  3. Modelling of Zirconium and Hafnium separation using continuous annular chromatography

    International Nuclear Information System (INIS)

    Moch-Setyadji; Endang Susiantini

    2014-01-01

    Nuclear degrees of zirconium in the form of a metal alloy is the main material for fuel cladding of NPP. Zirconium is also used as sheathing UO 2 kernel in the form of ZrC as a substitute of SiC in the fuel elements of High Temperature Reactor (HTR). Difficulty separating hafnium from zirconium because it has a lot of similarities in the chemical properties of Zr and Hf. Annular chromatography is a device that can be used for separating of zirconium and hafnium to obtain zirconium nuclear grade. Therefore, it is necessary to construct the mathematical modelling that can describe the separation of zirconium and hafnium in the annular chromatography containing anion resin dowex-1X8. The aim of research is to perform separation simulation by using the equilibrium model and mass transfer coefficient resulted from research. Zr and Hf feed used in this research were 26 and 1 g/l, respectively. Height of resin (L), angular velocity (ω) and the superficial flow rate (uz) was varied to determine the effect of each parameter on the separation of Zr and Hf. By using Kd and Dv values resulted previous research. Simulation results showed that zirconium and hafnium can be separated using a continuous annular chromatography with high resin (long bed) 50 cm, superficial flow rate of 0.001 cm/s, the rotation speed of 0.006 rad/min and 20 cm diameter annular. In these conditions the results obtained zirconium concentration of 10,303.226 g/m 3 and hafnium concentration of 12.324 g/m 3 (ppm). (author)

  4. Hafnium Resonance Parameter Analysis Using Neutron Capture and Transmission Experiments

    International Nuclear Information System (INIS)

    MJ Trbovich; DP Barry; RE Slovacck; Y Danon; RC Block; JA Burke; NJ Drindak; G Leinweber; RV Ballad

    2004-01-01

    The focus of this work is to determine resonance parameters for stable hafnium isotopes in the 0.005-200 eV region, with special emphasis on the overlapping 176 Hf and 178 Hf resonances near 8 eV. The large neutron cross section of hafnium, combined with its corrosion resistance and excellent mechanical properties, make it a useful material for controlling nuclear reactions. Experiments measuring neutron capture and transmission were performed at the Rensselaer Polytechnic Institute (RPI) electron linear accelerator (LINAC) using the time of flight method. 6 Li glass scintillation detectors were used for transmission experiments at flight path lengths of 15 and 25 m. Capture experiments were done using a sixteen section NaI(Tl) multiplicity detector at a flight path length of 25 m. These experiments utilized various thicknesses of metallic and isotopically-enriched liquid samples. The liquid samples were designed to provide information on the 176 Hf and 178 Hf contributions to the 8 eV doublet without saturation. Data analysis was done using the R-matrix Bayesian code SAMMY version M6 beta. SAMMY is able to account for experimental resolution effects for each of the experimental setups at the RPI LINAC, and also can correct for multiple scattering effects in neutron capture yield data. The combined capture and transmission data analysis yielded resonance parameters for all hafnium isotopes from 0.005-200 eV. Resonance integrals were calculated along with errors for each hafnium isotope using the NJOY [1] and INTER [2] codes. The isotopic resonance integrals calculated were significantly different than previously published values; however the calculated elemental hafnium resonance integral changed very little

  5. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  6. Electronic properties of hafnium oxide: A contribution from defects and traps

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

    2016-02-15

    In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

  7. Method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream

    International Nuclear Information System (INIS)

    Snyder, T.S.; Stolz, R.A.

    1992-01-01

    This patent describes a method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream from a sand chlorinator in which the silicon and metals present in sand fed to the chlorinator are converted to chlorides at temperatures over about 800 degrees C. It comprises cooling a vapor stream from a sand chlorinator, the vapor stream containing principally silicon tetrachloride, zirconium tetrachloride, and hafnium tetrachloride contaminated with ferric chloride, to a temperature of from about 335 degrees C to about 600 degrees C; flowing the vapor stream through a gaseous diffusion separative barrier to produce a silicon tetrachloride-containing vapor stream concentrated in zirconium tetrachloride and hafnium tetrachloride and a silicon tetrachloride-containing vapor stream depleted in zirconium tetrachloride and hafnium tetrachloride; adsorbing the ferric chloride in the separative barrier; and recovering the silicon tetrachloride stream concentrated in zirconium tetrachloride and hafnium tetrachloride separately from the silicon tetrachloride stream depleted in zirconium tetrachloride and hafnium tetrachloride

  8. Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

    Science.gov (United States)

    Shishodia, Manmohan Singh; Pathania, Pankaj

    2018-04-01

    Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

  9. Synthesis of Hafnium-Based Ceramic Materials for Ultra-High Temperature Aerospace Applications

    Science.gov (United States)

    Johnson, Sylvia; Feldman, Jay

    2004-01-01

    This project involved the synthesis of hafnium (Hf)-based ceramic powders and Hf-based precursor solutions that were suitable for preparation of Hf-based ceramics. The Hf-based ceramic materials of interest in this project were hafnium carbide (with nominal composition HE) and hafnium dioxide (HfO2). The materials were prepared at Georgia Institute of Technology and then supplied to research collaborators Dr. Sylvia Johnson and Dr. Jay Feldman) at NASA Ames Research Center.

  10. Elaboration and characterisation of yttrium oxide and hafnium oxide powders by the sol-gel process

    International Nuclear Information System (INIS)

    Hours, T.

    1988-01-01

    The two classical sol-gel processes, colloidal and polymeric are studied for the preparation of yttrium oxide and hafnium oxide high performance powders. In the colloidal process, controlled and reproducible conditions for the preparation of yttrium oxide and hafnium oxide sols from salts or alkoxides are developed and the hydrothermal synthesis monodisperse hafnium oxide colloids is studied. The polymeric process is studied with hafnium ethyl-hexylate, hydrolysis kinetics for controlled preparation of sols and gels is investigated. Each step of preparation is detailed and powders obtained are characterized [fr

  11. Design and fabrication of hafnium tube to control the power of the irradiation test fuel in HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Kim, D. H.; Lee, C. B.; Kim, Y. M.; Yang, Y. S.; Jung, Y. H

    2003-05-01

    For the irradiation test at HANARO, non-instrumentation capsule was manufactured and hafnium tube was used to control LHGR of HANARO. Hafnium tube can control the irradiation condition of HANARO similar to that of commercial reactor. Hafnium tube thickness was determined by the LHGR calculated at OR-4 irradiation hole to be installed the non-instrumented capsule. To fabricate the hafnium tube with hafnium plate, the fabrication method was determined by using the hafnium mechanical properties. And the tensile strength of hafnium was confirmed by tensile test. This report is confirmed the LHGR control at the OR-4 and the Hafnium fabrication for in used which the AFPCAP non-instrumented irradiation capsule.

  12. Pentamethylcyclopentadienyl Zirconium and Hafnium Polyhydride Complexes : Synthesis, Structure, and Reactivity

    NARCIS (Netherlands)

    Visser, Cindy; Hende, Johannes R. van den; Meetsma, Auke; Hessen, Bart; Teuben, Jan H.

    2001-01-01

    The half-sandwich zirconium and hafnium N,N-dimethylaminopropyl complexes Cp*M[(CH2)3NMe2]Cl2 (Cp* = η5-C5Me5, M = Zr, 1; Hf, 2) and Cp*M[(CH2)3NMe2]2Cl (M = Zr, 3; Hf, 4) were synthesized by mono- or dialkylation of Cp*MCl3 with the corresponding alkyllithium and Grignard reagents. Hydrogenolysis

  13. Separation of zirconium from hafnium by ion exchange

    Energy Technology Data Exchange (ETDEWEB)

    Felipe, Elaine C.B.; Palhares, Hugo G.; Ladeira, Ana Claudia Q., E-mail: elainecfelipe@yahoo.com.br, E-mail: hugopalhares@gmail.com, E-mail: ana.ladeira@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2013-07-01

    Zirconium and hafnium are two of the most important metals for the nuclear industry. Hafnium occurs in all zirconium ores usually in the range 2 - 3%. However, for the most nuclear industry applications, it is necessary to use a zirconium of extremely pure level. The current work consists in the separation of zirconium and hafnium by the ion exchange method in order to obtain a zirconium concentrate of high purity. The zirconium and hafnium liquors were produced from the leaching of the Zr(OH){sub 4} and Hf(OH){sub 4} with nitric acid for 24 hours. From these two liquors it was prepared one solution containing 7.5 x 10{sup -2} mol L{sup -1} of Zr and 5.8 x 10{sup -3} mol L{sup -1} of Hf with acidity of 1 M. Ion exchange experiments were carried out in batch with the resins Dowex 50WX4, Dowex 50WX8 100, Dowex 50WX8 50, Amberlite IR-120 and Marathon C at constant temperature 28 deg C. Other variables such as, acidity and agitation were kept constant. The data were adjusted to Langmuir equation in order to calculate the maximum loading capacity (q{sub max}) of the resins, the distribution coefficient (K{sub d}) for Zr and Hf and the separation factor (α{sub Hf}{sup Zr} ). The results of maximum loading capacity (q{sub max}) for Zr and Hf, in mmol g{sup -}1, showed that the most suitable resins for columns experiments are: Dowex 50WX4 50 (q{sub max} Z{sub r} = 2.21, Hf = 0.18), Dowex 50WX8 50 (q{sub max} Zr = 1.89, Hf = 0.13) and Amberlite (q{sub max} Zr = 1.64, Hf = 0.12). However, separations factors, α{sub Hf}{sup Zr}, showed that the resins are not selective. (author)

  14. Evolution of the hafnium isotopic composition in the RBMK reactor

    International Nuclear Information System (INIS)

    Jurkevicius, A.; Remeikis, V.

    2002-01-01

    The isotopic composition of hafnium in the radial neutron flux sensor of the RBMK-1500 reactor, the rates of the neutron absorption on Hf isotopes and the neutron spectrum in the sensor were numerically modeled. The sequence SAS2 (Shielding Analysis Sequence) program from the package SCALE 4.4A and the HELIOS code system were used for calculations. It has been obtained that the overall neutron absorption rates in hafnium for the sensors located in the 2.4 % and 2.6 % enrichment uranium-erbium nuclear fuel assemblies are by 16 % and 19 % lower than in the 2.0 % enrichment uranium nuclear fuel assemblies. The overall neutron absorption rate in hafnium decreases 2.70-2.75 times due to the sensor burnup to 5800 MW d. The sensitivity of the Hf sensors to the thermal neutron flux increases twice due to the nuclear fuel assembly burnup to 3000 MW d. The corrective factors ξ d (I) at the different integral current I of the sensors and ξ td (E) at the different burnup E of the nuclear fuel assemblies were calculated. The obtained dependence ξ d (I) calculated numerically was compared to the experimental one determined by comparing signals of the fresh sensor and the sensor with the integral current I and by processing repeated calibration results of Hf sensors in RBMK-1500 reactors. The relative relationship coefficients K T (T FA ) were found for all RBMK-1500 nuclear fuel types. (author)

  15. Recovery of hafnium radioisotopes from a proton irradiated tantalum target

    International Nuclear Information System (INIS)

    Taylor, W.A.; Garcia, J.G.; Hamilton, V.T.; Heaton, R.C.; Jamriska, D.J.; Ott, M.A.; Philips, D.R.; Radzinski, S.D.

    1998-01-01

    The 178m2 Hf nucleus, with its long half-life (31 y) and high-spin isomeric state (16 + ) is desired for new and exotic nuclear physics studies. The Los Alamos Radioisotope Program irradiated a kilogram of natural tantalum at the Los Alamos Meson Physics Facility in early 1981. After fifteen years of decay, this target was ideal for the recovery of 178m2 Hf. There was more than a millicurie of 178m2 Hf produced during this irradiation and there has been a sufficient period of time for most of the other hafnium radioisotopes to decayed away. Traditionally, separation techniques for recovering hafnium isotopes from tantalum targets employ solvent extractions with reagents that are considered hazardous. These techniques are no longer condoned because they generate a mixed-waste (radioactive and hazardous components) that can not be treated for disposal. In this paper we describe a new and unique procedure for the recovery of hafnium radioisotopes from a highly radioactive, proton irradiated, tantalum target using reagents that do not contribute a hazardous waste component. (author)

  16. Zirconium and hafnium in the southeastern Atlantic States

    Science.gov (United States)

    Mertie, J.B.

    1958-01-01

    The principal source of zirconium and hafnium is zircon, though a minor source is baddeleyite, mined only in Brazil. Zircon is an accessory mineral in igneous, metamorphic, and sedimentary rocks, but rarely occurs in hardrock in minable quantities. The principal sources of zircon are therefore alluvial deposits, which are mined in many countries of five continents. The principal commercial deposits in the United States are in Florida, though others exist elsewhere in the southeastern Coastal Plain. The evidence indicates that conditions for the accumulation of workable deposits of heavy minerals were more favorable during the interglacial stages of the Pleistocene epoch than during Recent time. Therefore detrital ores of large volume and high tenor are more likely to be found in the terrace deposits than along the present beaches. Other concentrations of heavy minerals, however, are possible at favored sites close to the Fall Line where the Tuscaloosa formation rests upon the crystalline rocks of the Piedmont province. A score of heavy and semiheavy minerals occur in the detrital deposits of Florida, but the principal salable minerals are ilmenite, leucoxene, rutile, and zircon, though monazite and staurolite are saved at some mining plants. Commercial deposits of heavy minerals are generally required to have a tenor of 4 percent, though ores with a lower tenor can be mined at a profit if the content of monazite is notably high. The percentages of zircon in the concentrates ranges from 10 to 16 percent, and in eastern Florida from 13 to 15 percent. Thus the tenor in zircon of the ore-bearing sands ranges from 0.4 to 0.6 percent. The content of hafnium in zircon is immaterial for many uses, but for some purposes very high or very low tenors in hafnium are required. Alluvial zircon cannot be separated into such varieties, which, if needed, must be obtained from sources in bedrock. It thus becomes necessary to determine the Hf : Zr ratios in zircon from many kinds of

  17. On the stabilization of niobium(V) solutions by zirconium(IV) and hafnium(IV)

    DEFF Research Database (Denmark)

    Sørensen, E.; Bjerre, A.B.

    1992-01-01

    Niobium cannot be separated from zirconium or hafnium when these elements occur together in solution with common anions such as chloride and sulphate. This is ascribed to the co-polymerization of niobium(V) and the hydrolysed ionic species of zirconium(IV) and hafnium(IV) to form colloidal...

  18. Use of X-ray fluorescence analysis for the determination of hafnium in zircalloys

    International Nuclear Information System (INIS)

    Sato, I.M.; Salvador, V.L.R.; Lordello, A.R.

    1985-01-01

    The determination of hafnium at trace levels (ppm) in the presence of zirconium by X-ray fluorescence technique is presented. The samples were prepared in the form of double-layer pellets, with boric acid as the binding material. The most sensitive first order line of hafnium HfLα (0.157 nm), which is used analyticaly, has approximately 67% overlapping with second order line of zirconium ZrKα 1 , (0.079 nm). As the excitation potencial of zirconium is larger than hafnium, the best condition was selected, so that the interference of zirconium intensity would not be significant in hafnium analytical line. The method allowed the determination of hafnium above 5.0 ppm (LLd = 1.5 ppm) with an accuracy of less than 10%. (Author) [pt

  19. Preparation of complexes of zirconium and hafnium tetrachlorides with phosphorus oxychloride

    International Nuclear Information System (INIS)

    Snyder, T.S.; Stoltz, R.A.

    1989-01-01

    This patent describes an improvement in a method for separating hafnium chloride from zirconium chloride using a distillation column, with a hafnium chloride enriched vapor stream taken from the top of the column and a zirconium enriched chloride stream taken from the bottom of the column. The improvement comprising: purifying the zirconium-hafnium chloride in a molten salt purification vessel prior to or after introduction into the distillation column to substantially eliminate iron chloride from the zirconium-hafnium chloride by at least periodically removing iron chloride from the molten salt purification vessel by electrochemically plating iron onto an electrode in the molten salt purification vessel. The molten salt in the molten salt purification vessel consisting essentially of a mixture of chlorides selected from the group consisting of alkali metals, alkaline earth metals, zirconium, hafnium, aluminum, manganese, and zinc

  20. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  1. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  2. Properties of neutron-rich hafnium high-spin isomers

    CERN Multimedia

    Tungate, G; Walker, P M; Neyens, G; Billowes, J; Flanagan, K; Koester, U H; Litvinov, Y

    It is proposed to study highly-excited multi-quasiparticle isomers in neutron-rich hafnium (Z=72) isotopes. Long half-lives have already been measured for such isomers in the storage ring at GSI, ensuring their accessibility with ISOL production. The present proposal focuses on:\\\\ (i) an on-line experiment to measure isomer properties in $^{183}$Hf and $^{184}$Hf, and\\\\ (ii) an off-line molecular breakup test using REXTRAP, to provide Hf$^{+}$ beams for future laser spectroscopy and greater sensitivity for the future study of more neutron-rich isotopes.

  3. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  4. Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

    Science.gov (United States)

    Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

    2017-07-01

    In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

  5. Corrosion potentials of hafnium in molten alkaline-earth metal chlorides

    International Nuclear Information System (INIS)

    Kovalik, O.Yu.; Tkhaj, V.D.

    2000-01-01

    Corrosion potentials of hafnium in molten calcium, strontium and barium chlorides are measured and their temperature dependences are determined. It is stated that the corrosion potential of hafnium becomes more electropositive with an increase of the environment temperature. If the temperature is the same the potential shifts to the interval of more electronegative values in the row of CaCl 2 , SrCl 2 , BaCl 2 which corresponds to a lesser corrosion rate in environments positioned from left to right. the comparison of hafnium corrosion potentials with previously measured values for titanium and zirconium shows that a metal activity decrease results in a more electronegative corrosion potential [ru

  6. Hafnium-Based Contrast Agents for X-ray Computed Tomography.

    Science.gov (United States)

    Berger, Markus; Bauser, Marcus; Frenzel, Thomas; Hilger, Christoph Stephan; Jost, Gregor; Lauria, Silvia; Morgenstern, Bernd; Neis, Christian; Pietsch, Hubertus; Sülzle, Detlev; Hegetschweiler, Kaspar

    2017-05-15

    Heavy-metal-based contrast agents (CAs) offer enhanced X-ray absorption for X-ray computed tomography (CT) compared to the currently used iodinated CAs. We report the discovery of new lanthanide and hafnium azainositol complexes and their optimization with respect to high water solubility and stability. Our efforts culminated in the synthesis of BAY-576, an uncharged hafnium complex with 3:2 stoichiometry and broken complex symmetry. The superior properties of this asymmetrically substituted hafnium CA were demonstrated by a CT angiography study in rabbits that revealed excellent signal contrast enhancement.

  7. Solvent extraction of zirconium and hafnium using MIBK-HSCN-HCL process

    International Nuclear Information System (INIS)

    Borges, J.A.L.; Cunha, O.G.C. da

    1985-01-01

    The separation process of zirconium and hafnium, using MIBK as extractant in a set of mixer-settler is described. The chemical analysis was done by X-ray fluorescence and emission spectrography. (Author) [pt

  8. Hafnium as a prospective absorber for VVER-1000 reactors of Ukraine

    International Nuclear Information System (INIS)

    Afanas'ev, A.A.; Konotop, Yu.F.; Odejchuk, N.L.

    2000-01-01

    Nuclear-physical parameters of hafnium having in mind its use as an absorber, are considered. Technical aspects of Hf production are exposed. Use of B 4 C/Hf absorber is twice cheaper than a standard one

  9. Spectrofluorimetric determination of hafnium and zirconium with 3,7-dihydroxyflavone

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Takushi; Suzuki, Osamu; Seuzuki, Tetsuo; Murata, Akira

    1986-04-01

    The absorptive and fluorescent characteristics of the hafnium and zirconium complexes of 3-hydroxyflavone and its 12 hydroxy and methoxy derivatives have been studied. The fluorescence of the 1:1 hafnium - 3,7-dihydroxyflavone complex (lambdasub(ex.)397 nm,lambdasub(em.) 465 nm) in 3 M hydrochloric acid has been used to determine 2-40 ng ml/sup -1/ of hafnium. The fluorescence of the 1:1 zirconium - 3,7-dihydroxyflavone complex (lambdasub(ex.) 395 nm, lambda sub(em.) 465 nm) at pH 2.0 in 0.02 M sulphate solution has been used to determine 2-40 ng ml/sup -1/ of zirconium. These methods are very sensitive and can be used for the simultaneous determination of hafnium and zirconium with an error of about 5%.

  10. Electronic structure of pentacene on hafnium studied by ultraviolet photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Kang, Seong Jun; Yi, Yeon Jin; Kim, Chung Yi; Whang, Chung Nam

    2005-01-01

    The electronic structure of pentacene on hafnium, which is a low work function metal, was analyzed by using ultraviolet photoelectron spectroscopy. The energy level alignment was studied by using the onset of the highest occupied molecular orbital level and the shift of the vacuum level of the pentacene layer, which was deposited on a clean hafnium surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was 1.52 eV from the Fermi level of hafnium. The vacuum level was shifted 0.28 eV toward higher binding energy with additional pentacene layers, which means an interfacial dipole exists at the interface between pentacene and hafnium. We confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a pentacene thin-film transistor.

  11. Compositional characterization of hafnium alloy used as control rod material in nuclear reactor

    International Nuclear Information System (INIS)

    Sharma, P.K.; Bassan, M.K.T.; Avhad, D.K.; Singhal, R.K.

    2014-01-01

    Hafnium (Hf) is a heavy, steel-gray metal in the reactive metals group that is very closely related to zirconium (Zr) and forms a continuous solid-solution at all concentrations of zirconium and hafnium. Hafnium occurs naturally with zirconium at a ratio of approximately 1:50 and is produced exclusively as a co-product of nuclear-grade zirconium. It is used in a variety of applications where few substitutes are available. Thus with its relatively high thermal neutron absorption cross-section, hafnium's biggest application is as control rod material in nuclear reactors. During this work, major (Zirconium (Zr), Cobalt (Co) and Molybdenum (Mo)) and trace ((Iron (Fe), Nickel (Ni) and Titanium (Ti)) elements were measured in the bulk matrices of Hf. These materials are also associated with other impurities such as O, N, H etc.

  12. Evaluation of thermodynamic data on zirconium and hafnium halides and oxyhalides by means of transport experiments

    International Nuclear Information System (INIS)

    Dittmer, G.; Niemann, U.

    1987-01-01

    A consistent set of thermodynamic data for zirconium and hafnium halides, oxides and oxyhalides was achieved. It was found that formation enthalpies of gaseous compounds could be derived from solubility measurements together with theoretical estimations and a revision of literature data. Free energy functions were calculated employing statistical mechanics. Data for liquid and solid compounds were obtained via sublimation and vaporization data. Chemical equilibria of zirconium and hafnium with halogens are discussed. 51 refs.; 16 figs.; 14 tabs

  13. Investigation of chlorination of zirconium and hafnium and their compounds in discharge from hollow cathode

    International Nuclear Information System (INIS)

    Ioffe, R.B.; Korovin, Yu.I.

    1978-01-01

    The possibility is investigated of chlorinating various zirconium and hafnium compounds (metal, oxide, carbide) in a hot discharge from a hollow cathode with various chlorinating reagents: copper monochloride, nickel chloride, magnesium chloride, for the purpose of accelerating their entrance into the excitation zone. It has been shown thermodynamically and experimentally that chlorination of metal zirconium and hafnium and their carbides with copper monochloride in hot hollow cathode conditions provides a sharp increase in the intensity of the lines of these elements

  14. Knight shift in scandium and its alloys with hafnium and titanium

    International Nuclear Information System (INIS)

    Chachkhiani, Z.B.; Chechernikov, V.I.; Martynova, L.F.; Nidel'ko, V.I.; Chachkhiani, L.G.; Georgadze, G.S.

    1981-01-01

    Results of the investigation of NMR on 45 Sc nuclei and magnetic susceptibility of scandium and its solid solutions with titanium and hafnium are presented. It is shown that the existing hybridization of S and d zones in pure scandium and its alloys with titanium and hafnium affects the Knight shift reducing the value of the contact contribution. The temperature behaviour of the Knight shift from the temperature dependence and spin susceptibility of collectivized d electrons [ru

  15. Application of hafnium hydride control rod to large sodium cooled fast breeder reactor

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Kazumi, E-mail: kazumi_ikeda@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Moriwaki, Hiroyuki, E-mail: hiroyuki_moriwaki@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Ohkubo, Yoshiyuki, E-mail: yoshiyuki_okubo@mfbr.mhi.co.jp [Mitsubishi FBR Systems, Inc., 34-17, Jingumae 2-Chome, Shibuya-ku, Tokyo 150-0001 (Japan); Iwasaki, Tomohiko, E-mail: tomohiko.iwasaki@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Tohoku University, Aoba, Aramaki, Aoba-ku, Sendai-shi, Miyagi-ken 980-8579 (Japan); Konashi, Kenji, E-mail: konashi@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, Narita-cho, Oarai-machi, Higashi-Ibaraki-gun, Ibaraki-ken 311-1313 (Japan)

    2014-10-15

    Highlights: • Application of hafnium hydride control rod to large sodium cooled fast breeder reactor. • This paper treats application of an innovative hafnium hydride control rod to a large sodium cooled fast breeder reactor. • Hydrogen absorption triples the reactivity worth by neutron spectrum shift at H/Hf ratio of 1.3. • Lifetime of the control rod quadruples because produced daughters of hafnium isotopes are absorbers. • Nuclear and thermal hydraulic characteristics of the reactor are as good as or better than B-10 enriched boron carbide. - Abstract: This study treats the feasibility of long-lived hafnium hydride control rod in a large sodium-cooled fast breeder reactor by nuclear and thermal analyses. According to the nuclear calculations, it is found that hydrogen absorption of hafnium triples the reactivity by the neutron spectrum shift at the H/Hf ratio of 1.3, and a hafnium transmutation mechanism that produced daughters are absorbers quadruples the lifetime due to a low incineration rate of absorbing nuclides under irradiation. That is to say, the control rod can function well for a long time because an irradiation of 2400 EFPD reduces the reactivity by only 4%. The calculation also reveals that the hafnium hydride control rod can apply to the reactor in that nuclear and thermal characteristics become as good as or better than 80% B-10 enriched boron carbide. For example, the maximum linear heat rate becomes 3% lower. Owing to the better power distribution, the required flow rate decreases approximately by 1%. Consequently, it is concluded on desk analyses that the long lived hafnium hydride control rod is feasible in the large sodium-cooled fast breeder reactor.

  16. Dielectric response and ac conductivity analysis of hafnium oxide nanopowder

    International Nuclear Information System (INIS)

    Karahaliou, P K; Xanthopoulos, N; Krontiras, C A; Georga, S N

    2012-01-01

    The dielectric response of hafnium oxide nanopowder was studied in the frequency range of 10 -2 -10 6 MHz and in the temperature range of 20-180 °C. Broadband dielectric spectroscopy was applied and the experimental results were analyzed and discussed using the electric modulus (M*) and alternating current (ac) conductivity formalisms. The analyses of the dc conductivity and electric modulus data revealed the presence of mechanisms which are thermally activated, both with almost the same activation energy of 1.01 eV. A fitting procedure involving the superposition of the thermally activated dc conductivity, the universal dielectric responce and the near constant loss terms has been used to describe the frequency evolution of the real part of the specific electrical conductivity. The conductivity master curve was obtained, suggesting that the time-temperature superposition principle applies for the studied system, thus implying that the conductivity mechanisms are temperature independent.

  17. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  18. Determination of hafnium with the inductively coupled plasma (ICP)

    International Nuclear Information System (INIS)

    Wuensch, G.; Pose, K.

    1985-01-01

    The relative intensities of 198 hafnium lines in the Ar-ICP are listed. Spectral interference tables are given for the 9 analytically best lines, covering the range of +-60 pm around the Hf-lines. They include measured (not calculated) data of the interferent equivalent concentrations (IEC) and the critical concentration ratios (CCR) for 115 lines of all 34 possibly interfering elements. In many cases, these IEC- or CCR-data differ by 1 or 2 orders of magnitude from those calculated from intensities observed in the NBS-copper arc. Since no intense Hf-line is free from spectral interferences, examples are given for the calculation of the most suitable line for a known matrix. (orig.) [de

  19. Systematic investigation of electromagnetic properties of all stable hafnium isotopes

    International Nuclear Information System (INIS)

    Napiorkowski, T.J.; Choinski, J.; Czosnyka, T.; Iwanicki, J.; Kownacki, J.; Zemlo, L.; Srebrny, J.; Starosta, K.; Boer, J. de.; Gollwitzer, A.; Loewe, M.; Wuerkner, M.; Guenther, C.; Weber, T.; Hagemann, G.; Sletten, G.

    1996-01-01

    In a systematic investigation of the electromagnetic structure of hafnium stable isotopes enriched targets of 176, 177, 178, 179, 180 Hf were Coulomb exciting using: 67 MeV 19 F beam from NBITAL FN Tandem, 125 MeV 32 S beam from MP Tandem in Accelerator Laboratory LMU and TU Munich, 225 MeV 58 Ni beam from NBITAL FN Tandem plus 2 Liniac Boosters complex. Scattered particle-gamma as well as p-γ-γ coincidence were registered. A further simultaneous analysis of Coulomb excitation cross section as a function of scattering angle of 19 F, 32 S, 58 Ni projectiles should be sufficient to deduce reduced probabilities of E2 transitions in ground state band

  20. Synthesis and characterization of hafnium oxide for luminescent applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2008-01-01

    Full text: Hafnium oxide (HfO 2 ) is a material with a wide range of possible technological applications because it's chemical and physical properties such as high melting point, high chemical stability, high refraction index, high dielectric constant and hardness near to diamond in the tetragonal phase. The large energy gap and low phonon frequencies of the HfO 2 makes it appropriate as a host matrix for been doped with rare earth activators. Efficient luminescent materials find wide application in electroluminescent flat panel displays; color plasma displays panels, scintillators, cathode ray tubes, fluorescent lamps, lasers, etc. In recent years the study of luminescent materials based on HfO 2 has been intensified. Some groups have studied the optical properties of doped and undoped HfO 2 . In this contribution, Hafnium Oxide (HfO 2 ) films were prepared using the spray pyrolysis deposition technique. The material was synthesized using chlorides as raw materials in deionised water as solvent and deposited on Corning glass substrates at temperatures from 300 deg C to 600 deg C. For substrate temperatures lower than 400 deg C, the deposited films are amorphous, while for substrate temperatures higher than 450 deg C, the monoclinic phase of HfO 2 appears. Scanning electron microscopy with microprobe analysis was use to observe the microstructure and obtain the chemical composition of the films; rough surfaces with spherical particles were appreciated. UV and low energy X Ray radiations were used in order to achieve the thermoluminescent characterization of the films as a function of the deposition temperature

  1. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  2. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  3. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  4. Pyroelectricity of silicon-doped hafnium oxide thin films

    Science.gov (United States)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  5. Hafnium oxide nanoparticles: toward an in vitro predictive biological effect?

    International Nuclear Information System (INIS)

    Marill, Julie; Anesary, Naeemunnisa Mohamed; Zhang, Ping; Vivet, Sonia; Borghi, Elsa; Levy, Laurent; Pottier, Agnes

    2014-01-01

    Hafnium oxide, NBTXR3 nanoparticles were designed for high dose energy deposition within cancer cells when exposed to ionizing radiation. The purpose of this study was to assess the possibility of predicting in vitro the biological effect of NBTXR3 nanoparticles when exposed to ionizing radiation. Cellular uptake of NBTXR3 nanoparticles was assessed in a panel of human cancer cell lines (radioresistant and radiosensitive) by transmission electron microscopy. The radioenhancement of NBTXR3 nanoparticles was measured by the clonogenic survival assay. NBTXR3 nanoparticles were taken up by cells in a concentration dependent manner, forming clusters in the cytoplasm. Differential nanoparticle uptake was observed between epithelial and mesenchymal or glioblastoma cell lines. The dose enhancement factor increased with increase NBTXR3 nanoparticle concentration and radiation dose. Beyond a minimum number of clusters per cell, the radioenhancement of NBTXR3 nanoparticles could be estimated from the radiation dose delivered and the radiosensitivity of the cancer cell lines. Our preliminary results suggest a predictable in vitro biological effect of NBTXR3 nanoparticles exposed to ionizing radiation

  6. Studies of high-K isomers in hafnium nuclei

    International Nuclear Information System (INIS)

    Sletten, G.; Gjoerup, N.L.

    1991-01-01

    K-isomeric states built on high-Ω Nilsson orbitals from deformation-aligned high-j levels near the Fermi surface are found to cluster in the neutron rich Hf, W and Os nuclei. It has been shown that some of the high seniority states of this type have decay properties that indicate strong mixing of configurations and that in Osmium nuclei γ-softness cause strong deviations from the well established K-selection rule. Also in the Hafnium nuclei is the expected forbiddenness in isomeric decays an order of magnitude smaller than expected from the K-selection rule. A new 9 quasiparticle isomer has been discovered in 175 Hf at I=57/2. This isomer has the anomalous decay as the dominant mode. Other lower seniority states are also identified. At spin 35/2 and 45/2 the deformation aligned states become yrast, but the structure of the yrast line to even higher spins is not yet understood. (author)

  7. Luminescent determination of zirconium and hafnium with myricetin

    International Nuclear Information System (INIS)

    Talipov, Sh.T.; Zel'tser, L.E.; Morozova, L.A.; Tashkhodzhaev, A.T.

    1978-01-01

    Reaction of formation of 3, 5, 7, 3', 4', 5' - hexaoxiflavone - myricetin complexes with zirconium and hafnium ions has been the basis for development of luminescent method of determining these elements. Optimum conditions for complexing have been determined. For Hf they are : 8-9 HCl concentration, maximum fluorescence wave length (lambda fl.)of 520 nm, wave length of exciting light (lambda el) of 436 nm, for Zr lambda fl = 536nm, lambda el = 436 nm. Stable fluorescence establishes after 25 min. for Zr and after 15 min for Hf in the presence of 40% ethanol. Usage of various camouflage agents has permitted to attain high selectivity of the method. Possibility for determination of Zr with myricetin in the presence of a 10-time excess of Hf, Cr, Cu, 50-time excess of Mo and Ti is shown. Sensitivity of Zr determination is 2.0x10 μg -2 /ml, for Hf it is 9.0x10 μg -3 and mineral waters

  8. Composition and microstructure of zirconium and hafnium germanates obtained by different chemical routes

    International Nuclear Information System (INIS)

    Utkin, A.V.; Prokip, V.E.; Baklanova, N.I.

    2014-01-01

    The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. The products were characterized using high-temperature X-ray diffraction analysis (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and thermal (TG/DTA) analysis. To investigate the phase composition and stoichiometry of compounds the unit cell parameters were refined by full-profile Rietveld XRD analysis. The morphology of products and its evolution during high-temperature treatment was examined by SEM analysis. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. The ceramic route requires a multi-stage high-temperature treatment to obtain zirconium and hafnium germanates of 95% purity or more. Also, there are strong diffusion limitations to obtain hafnium germanate Hf 3 GeO 8 by ceramic route. On the contrary, the co-precipitation route leads to the formation of nanocrystalline single phase germanates of stoichiometric composition at a relatively low temperatures (less than 1000 °C). The results of quantitative XRD analysis showed the hafnium germanates are stoichiometric compounds in contrast to zirconium germanates that form a set of solid solutions. This distinction may be related to the difference in the ion radii of Zr and Hf. - Graphical abstract: The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. Display Omitted - Highlights: • Zr and Hf germanates were synthesized by ceramic and co-precipitation routes. • The morphology of products depends on the synthesis parameters. • Zirconium germanates forms a set of solid solutions. • Hafnium germanates are stoichiometric compounds

  9. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  10. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  11. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  12. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  13. Determination of hafnium, molybdenum, and vanadium in niobium and niobium-based alloys by atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Ide, Kunikazu; Kobayashi, Takeshi; Sudo, Emiko.

    1985-01-01

    The analytical procedure is as follows: Weigh 1 g of a sample and put it into a 100 cm 3 PTFE beaker. Add 5 ml of distilled water and 5 ml of hydrofluoric acid, and then heat the solution on a hot plate, adding 3 ml of nitric acid dropwise. Dilute the solution to 100 cm 3 with distilled water. When hafnium is determined, add 2 g of diammonium titanium hexafluoride ((NH 4 ) 2 TiF 6 )) before dilution. Working standard solutions are prepared by adding the stock standard solutions of hafnium, molybdenum, and vanadium into niobium solutions. When hafnium is determined, add 2 g of (NH 4 ) 2 TiF 6 and the alloying elements in amounts corresponding to those in sample solutions into the working standard solutions. The tolerable amounts of hydrofluoric acid were 2.9 M, 2.1 M, and 3.1 M and those of nitric acid were 1.0 M, 1.6 M, and 1.6 M for hafnium, molybdenum, and vanadium, respectively. It was found that (NH 4 ) 2 TiF 6 greatly increased the sensitivity for hafnium determination. Niobium showed minus effect for hafnium and plus effect for molybdenum and vanadium. The atomic absorption of molybdenum and vanadium were not influenced by the presence of 20 % of each alloying element, while the atomic absorption of hafnium was given plus effect by 20 % of zirconium, iron, cobalt, nickel, manganese, chromium or vanadium and minus effect by 20 % tungsten. The analytical values of hafnium, molybdenum, and vanadium in niobium-based alloys by this method showed a good agreement with those by X-ray fluorescence analysis. The lower limits of determination (S/N=2) were 0.05, 0.001, and 0.002 % and the relative standard deviation were 3, 1, and 1.5 % for hafnium, molybdenum, and vanadium, respectively. (author)

  14. Separation of zirconium and hafnium from acompanying elements by paper chromatography in the systems of alcohol-acid

    International Nuclear Information System (INIS)

    Lebedeva, G.G.; Viktorova, M.E.

    1980-01-01

    Solvents have been chosen and investigated which provide expressed separation of zirconium and hafnium at the analysis of mineral raw materials by paper chromatography. The systems with HNO 3 and HCl containing methyl, ethyl, propyl and butyl alcohols have been studied as mobile phases for separation of zirconium and hafnium. It has been shown that alcohol contents and solvent acidity affect the Rsub(f) value of these elements. The C 2 H 5 OH-5MHCl and C 2 H 5 OH-5MHNO 3 systems are most optimal for pre-concentration of zirconium and hafnium

  15. ENTIRELY AQUEOUS SOLUTION-GEL ROUTE FOR THE PREPARATION OF ZIRCONIUM CARBIDE, HAFNIUM CARBIDE AND THEIR TERNARY CARBIDE POWDERS

    Directory of Open Access Journals (Sweden)

    Zhang Changrui

    2016-07-01

    Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.

  16. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  17. Plasma spraying of zirconium carbide – hafnium carbide – tungsten cermets

    Czech Academy of Sciences Publication Activity Database

    Brožek, Vlastimil; Ctibor, Pavel; Cheong, D.-I.; Yang, S.-H.

    2009-01-01

    Roč. 9, č. 1 (2009), s. 49-64 ISSN 1335-8987 Institutional research plan: CEZ:AV0Z20430508 Keywords : Plasma spraying * cermet coatings * microhardness * zirconium carbide * hafnium carbide * tungsten * water stabilized plasma Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass

  18. Titanium, zirconium- and hafnium containing initiators in the polymerization of acrylic monomers to ''living'' polymers

    International Nuclear Information System (INIS)

    Farnham, W.B.; Hertler, W.R.

    1988-01-01

    This patent describes a process for preparing ''living'' polymer. The process comprises contacting one or more acrylic monomers under polymerizing conditions with a polymerization-initiating amount of a tetra-coordinate organotitanium, organozirconium or organo-hafnium polymerization initiator, and ''living'' polymers produced thereby

  19. Vapor pressure, heat capacities, and phase transitions of tetrakis(tert-butoxy)hafnium

    Czech Academy of Sciences Publication Activity Database

    Fulem, Michal; Růžička, K.

    2011-01-01

    Roč. 311, Dec. (2011), s. 25-29 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : tetrakis(tert-butoxy)hafnium * MO precursor * vapor pressure * heat capacity * vaporization enthalpy * enthalpy of fusion Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

  20. Separation of hafnium from zirconium in sulfuric acid solutions using pressurized ion exchange

    International Nuclear Information System (INIS)

    Hurst, F.J.

    1981-01-01

    High-resolution pressurized ion exchange has been used successfully to study and separate hafnium and zirconium sulfate complexes by chromatographic elution from Dowex 50W-X8 (15 to 25 μm) resin with sulfuric acid solutions. Techniques were developed to continuously monitor the column effluents for zirconium and hafnium by reaction with fluorometric and colorimetric reagents. Since neither reagent was specific for either metal ion, peak patterns were initially identified by using the stable isotopes 90 Zr and 180 Hf as fingerprints of their elution position. Distribution ratios for both zirconium and hafnium decrease as the inverse fourth power of the sulfuric acid concentration below 2N and as the inverse second power at higher acid concentration. The hafnium-to-zirconium separation factor is approximately constant (approx. 8) over the 0.5 to 3N range. Under certain conditions, an unseparated fraction was observed that was not retained by the resin. The amount of this fraction which is thought to be a polymeric hydrolysis product appears to be a function of metal and sulfuric acid concentrations. Conditions are being sought to give the highest zirconium concentration and the lowest acid concentration that can be used as a feed material for commercial scale-up in the continuous annular chromatographic (CAC) unit without formation of the polymer

  1. The corrosion behavior of hafnium in high-temperature-water environments

    Energy Technology Data Exchange (ETDEWEB)

    Rishel, D.M.; Smee, J.D.; Kammenzind, B.F.

    1999-10-01

    The high-temperature-water corrosion performance of hafnium is evaluated. Corrosion kinetic data are used to develop correlations that are a function of time and temperature. The evaluation is based on corrosion tests conducted in out-of-pile autoclaves and in out-of-flux locations of the Advanced Test Reactor (ATR) at temperatures ranging from 288 to 360 C. Similar to the corrosion behavior of unalloyed zirconium, the high-temperature-water corrosion response of hafnium exhibits three corrosion regimes: pretransition, posttransition, and spalling. In the pretransition regime, cubic corrosion kinetics are exhibited, whereas in the posttransition regime, linear corrosion kinetics are exhibited. Because of the scatter in the spalling regime data, it is not reasonable to use a best fit of the data to describe spalling regime corrosion. Data also show that neutron irradiation does not alter the corrosion performance of hafnium. Finally, the data illustrate that the corrosion rate of hafnium is significantly less than that of Zircaloy-2 and Zircaloy-4.

  2. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    International Nuclear Information System (INIS)

    Shimizu, T; Villamayor, M; Helmersson, U; Lundin, D

    2016-01-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar–N 2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N 2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf–N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail. (paper)

  3. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  4. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  5. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  6. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  7. Pyrochemical reprocessing of nitride fuel

    International Nuclear Information System (INIS)

    Nakazono, Yoshihisa; Iwai, Takashi; Arai, Yasuo

    2004-01-01

    Electrochemical behavior of actinide nitrides in LiCl-KCl eutectic melt was investigated in order to apply pyrochemical process to nitride fuel cycle. The electrode reaction of UN and (U, Nd)N was examined by cyclic voltammetry. The observed rest potential of (U, Nd)N depended on the equilibrium of U 3+ /UN and was not affected by the addition of NdN of 8 wt.%. (author)

  8. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  9. Nitride stabilized core/shell nanoparticles

    Science.gov (United States)

    Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

    2018-01-30

    Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

  10. Reinforcement against crack propagation of PWR absorbers by development of boron-carbon-hafnium composites

    International Nuclear Information System (INIS)

    Provot, B.; Herter, P.

    2000-01-01

    In order to improve the mechanical behaviour of materials used as neutron absorbers in nuclear reactors, we have developed CERCER or CERMET composites with boron and hafnium. Thus a new composite B 4 C/HfB 2 has been especially studied. We have identified three kinds of degradation under irradiation (thermal gradient, swelling due to fission products and accidental corrosion) that induce imposed deformations cracking phenomena. Mechanical behaviour and crack propagation resistance have been studied by ball-on-three-balls and double torsion tests. A special device was developed to enable crack propagation and associated stress intensity factor measurements. Effects of structure and of a second phase are underline. First results show that these materials present crack initiation and propagation resistance much higher than pure boron carbide or hafnium diboride. We observe R-Curves effects, crack bridging or branching, crack arrests, and toughness increases that we can relate respectively to the composite structures. (author)

  11. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  12. Synthesis and characterization of Ho3+ doped hafnium oxide TLD for radiation dosimeter

    International Nuclear Information System (INIS)

    Sekar, Nandakumar; Ganesan, Bharanidharan; Sahib, Hajee Reyaz Ali; Aruna, Prakasarao; Ganesan, Singaravelu; Thamilkumar, P.; Rai, R.R.

    2017-01-01

    Cancer is a dreaded disease which is treated by Radiotherapy, Chemotherapy and Surgery. Radiotherapy plays a vital role in treatment of cancer and recently measurements of invivo radiation dosimetric in patient is of great interest due to high dose gradients in advanced technology like IMRT, IGRT etc. Hence, for the last few decades, a great degree of interest has been shown for the hafnium oxide for radiation dosimetric applications, due to its high dielectric constant, wide band gap and better interface properties such as chemical stability, conduction band offset and thermodynamic stability. In the present study, Synthesis and characterization of Ho 3+ doped Hafnium oxide were carried out and its applications towards radiation dosimeter were investigated

  13. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    Science.gov (United States)

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  14. Zirconium and hafnium tetrachloride separation by extractive distillation with molten zinc chloride lead chloride solvent

    International Nuclear Information System (INIS)

    McLaughlin, D.F.; Stoltz, R.A.

    1988-01-01

    In an extractive distillation method for separating hafniuim tetrachloride from zirconium tetrachloride of the type wherein a mixture of zirconium and hafnium tetrachlorides is introduced into an extractive distillation column, which extractive distillation column has a reboiler connected at the bottom and a reflux condenser connected at the top and wherein a molten salt solvent is circulated into the reflux condenser and through the column to provide a liquid phase, and wherein molten salt solvent containing zirconium tetrachloride is taken from the reboiler and run through a stripper to remove zirconium tetrachloride product from the molten salt solvent and the stripped molten salt solvent is returned to the reflux condenser and hafnium tetrachloride enriched vapor is taken as product from the reflux condenser, the improvement is described comprising: the molten salt having a composition of at least 30 mole percent zinc chloride and at least 10 mole percent of lead chloride

  15. Preparation of hafnium metal by calciothermic reduction of HfO2

    International Nuclear Information System (INIS)

    Sharma, I.G.; Vijay, P.L.; Sehra, J.C.; Sundaram, C.V.

    1975-01-01

    Hafnium metal powder has been produced by the calciothermic reduction of hafnium oxide. The influence of various experimental parameters - such as amount of calcium in excess of stoichiometric requirement, temperature, and time of reduction - on the yield and purity of the metal has been studied. The metal powder obtained by reduction at 960 0 C (two hours) with a calcium excess of 70% analysed 600 ppm of oxygen and 147 ppm of nitrogen. A reduction efficiency of 96% has been achieved under these conditions. The refining of the powder by electron beam melting, fused salt electrolysis, and iodide process has been studied. The oxygen content in the metal could be brought down from 6900 to 148 ppm by electron beam melt-refining. (author)

  16. On-line separation of refractory hafnium and tantalum isotopes at the ISOCELE separator

    CERN Document Server

    Liang, C F; Obert, J; Paris, P; Putaux, J C

    1981-01-01

    By chemical evaporation technique, neutron deficient hafnium nuclei have been on-line separated at the ISOCELE facility, from the isobar rare-earth elements, in the metal-fluoride HfF/sub 3//sup +/ ion form. Half-lives of /sup 162-165/Hf have been measured. Similarly, tantalum has been selectively separated on the TaF/sub 4//sup +/ form. (4 refs) .

  17. Complexonometric determination of hafnium (4) in the presence of europium(3) or tantalum(5)

    International Nuclear Information System (INIS)

    Oziashvili, E.D.; Ehsakiya, K.E.; Sirakanyan, N.M.

    1986-01-01

    Complexonometric determination of hafnium in the presence of Ta or Eu in samples which can be decomposed by acids, i.e. in double borides has been investigated. Initial solutions are prepared by fusing with K 2 S 2 O 8 excess, the fusion was leached by hot water, H 2 SO L 4 was added and Hf was titrated by complexone 3 in the presence of xylenol orange

  18. Simplified method for gravimetric determination of zirconium or hafnium with α-hydroxy carboxylic acids

    International Nuclear Information System (INIS)

    Barbieri, R.S.; Rocha, J.C.; Terra, V.R.; Marques Netto, A.

    1989-01-01

    The conditions for gravimetric determination of zirconium or hafnium by glicoloc acids derivatives were studied by thermogravimetric analysis. The method utilized shownd that after precipitation, washing and drying of precipitates at 150 o C, the resulting solid was weighed in the form of [M (RCH(OH)COO) 4 ] (M = Zr, Hf; R + C 6 H 5 , β-C 10 H 7 , p-BrC 6 H 4 ). (author)

  19. Modified method for zirconium or hafnium gravimetric determination with glycolic acid derivatives

    International Nuclear Information System (INIS)

    Barbieri, R.S.; Rocha, J.C.; Terra, V.R.; Marques Neto, A.

    1989-01-01

    The conditions for gravimetric determination of zirconium or hafnium by glicolic acid derivatives were studied by thermogravimetric analysis. The method utilized shown that after precipitation, washing and drying of precipitates at 150 0 C, the resulting solid was weighed in the form of [M{RCH(OH)COO} 4 ] (M = Zr,Hf;R = C 6 H 5 , β-C 10 H 7 ,p-BrC 6 H 4 ). (author) [pt

  20. Electrodeposition in molten salts of metals used in nuclear industry: hafnium and uranium

    International Nuclear Information System (INIS)

    Serrano, K.

    1998-01-01

    The aim of this work is to study the electrodeposition in molten salts of metals used in nuclear industry: hafnium and uranium. The experiment is carried out in a molten alkaline halogenide medium in a temperature range between 670 and 750 degrees Celsius. The first part of this work concerns more particularly the electrochemical behaviour of the hafnium and uranium ions in the electrolytic solution. The reduction mechanisms of these ions have been studied by the use of three methods: cyclic voltametry, chrono-potentiometry and square wave voltametry. Results have shown that the process of metal deposition is difficult to explain because secondary reactions (as for instance: adsorption phenomena or cathodic deposit dissolution) occur. The uranium germination has then been studied by modelling of chrono-amperograms. The experiments have shown that the deposition is the result of the initial uranium crystal growth and depends on the electrolyte diffusion. The second part of this work deals with the implementation of hafnium and uranium deposition taking into account the preceding mechanistic studies. Depositions have all been observed by physical methods as for instance scanning electron microscopy. Particular experimental solutions (soluble anode, addition of fluoride ions to the electrolyte) have been used. The obtained deposition of hafnium is smooth and adheres very well to the substrate. The uranium depositions have been implemented with the use of a soluble anode. Uranium is deposited in a dendritic shape to the cathode. It has also been shown that the electro-kinetic parameters (temperature, uranium ions concentration, current density) have not an important influence on the dendritic morphology of the deposition. This morphology could be the consequence of particular convection movements to the surface of the cathode. (O.M.)

  1. Rhodium and Hafnium Influence on the Microstructure, Phase Composition, and Oxidation Resistance of Aluminide Coatings

    OpenAIRE

    Maryana Zagula-Yavorska; Małgorzata Wierzbińska; Jan Sieniawski

    2017-01-01

    A 0.5 μm thick layer of rhodium was deposited on the CMSX 4 superalloy by the electroplating method. The rhodium-coated superalloy was hafnized and aluminized or only aluminized using the Chemical vapour deposition method. A comparison was made of the microstructure, phase composition, and oxidation resistance of three aluminide coatings: nonmodified (a), rhodium-modified (b), and rhodium- and hafnium-modified (c). All three coatings consisted of two layers: the additive layer and the interdi...

  2. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  3. On the phase formation of sputtered hafnium oxide and oxynitride films

    International Nuclear Information System (INIS)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-01-01

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

  4. Correlations between nuclear data and integral slab experiments: the case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

    Energy Technology Data Exchange (ETDEWEB)

    Palau, J.M

    1999-07-01

    The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

  5. Correlations between nuclear data and integral slab experiments: the case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

    Energy Technology Data Exchange (ETDEWEB)

    Palau, J M

    1999-07-01

    The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

  6. Correlations between nuclear data and results of integral slab experiments. Case of hafnium; Correlations entre donnees nucleaires et experiences integrales a plaques: le cas du hafnium

    Energy Technology Data Exchange (ETDEWEB)

    Palau, J M

    1997-10-22

    The aim of this thesis was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular `mock-up` reactor. In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods (APOLLO2 code) together with Monte Carlo- type simulations (TRIPOLI4 code) enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope {sup 177}Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent`s efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author) 128 refs.

  7. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  8. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  9. Leachability of nitrided ilmenite in hydrochloric acid

    OpenAIRE

    Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

    2011-01-01

    Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

  10. Fabrication of vanadium nitride by carbothermal nitridation reaction

    International Nuclear Information System (INIS)

    Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

    2005-01-01

    Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

  11. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  12. Extraction of zirconium and hafnium thiocyanates by CH3COCH2CH.(CH3)2-HSCN solvent from chloride medium

    International Nuclear Information System (INIS)

    Okada, A.T.

    1982-01-01

    A zirconium-hafnium separation process for application in nuclear industry is presented. The extraction of zirconium and hafnium thiocyanates in chloride medium by hexone-HSCN solvent was studied. The extraction process was developed, varying the parameters, such as, concentrations of the metals, the thiocyanate ion, the sulphate ion and free acidity in aqueous phase. (Author) [pt

  13. Simulation of the Nitriding Process

    Science.gov (United States)

    Krukovich, M. G.

    2004-01-01

    Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

  14. Solvent extraction of titanium(IV), zirconium(IV) and hafnium(IV) salicylates using liquid ion exchangers

    Energy Technology Data Exchange (ETDEWEB)

    Sundaramurthi, N M; Shinde, V M

    1989-02-01

    A solvent extraction method is proposed for the extraction of quadrivalent titanium, zirconium an hafnium from salicylate media using liquid ion exchangers such as Aliquat 336 and trioctylamine dissolved in xylene. The optimum conditions were evaluated from a critical study of the following: pH, salicylate concentration, amine concentration, diluent and period of equilibration. The method allows the separation of titanium, zirconium and hafnium from binary mixtures containing commonly associated metal ions and is applicable to the analysis of real samples such as BCS-CRM 387 nimonic 901, BCS-CRM 243/4 ferro-titanium, BCS-CRM 307 magnesium alloy and BCS-CRM 388 zircon. Titanium is determined either with hydrogen peroxide or by atomic absorption spectrometry whereas zirconium and hafnium are determined spectrophotometrically with Alizarin Red S and Zylenol Orange, respectively. The results of both separation and analysis are reported. The method is precise, accurate and fast.

  15. Use of hafnium in control bars of nuclear reactors; Uso de hafnio en barras de control de reactores nucleares

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez S, J.R.; Alonso V, G. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)]. e-mail: jrrs@nuclear.inin-mx

    2003-07-01

    Recently the use of hafnium as neutron absorber material in nuclear reactors has been reason of investigation by virtue of that this material has nuclear properties as to the neutrons absorption and structural that can prolong the useful life of the control mechanisms of the nuclear reactors. In this work some of those more significant hafnium properties are presented like nuclear material. Also there are presented calculations carried out with the HELIOS code for fuel cells of uranium oxide and of uranium and plutonium mixed oxides under controlled conditions with conventional bars of boron carbide and also with similar bars to which are substituted the absorbent material by metallic hafnium, the results are presented in this work. (Author)

  16. Precipitation of metal nitrides from chloride melts

    International Nuclear Information System (INIS)

    Slater, S.A.; Miller, W.E.; Willit, J.L.

    1996-01-01

    Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

  17. Strong influence of polymer architecture on the microstructural evolution of hafnium-alkoxide-modified silazanes upon ceramization.

    Science.gov (United States)

    Papendorf, Benjamin; Nonnenmacher, Katharina; Ionescu, Emanuel; Kleebe, Hans-Joachim; Riedel, Ralf

    2011-04-04

    The present study focuses on the synthesis and ceramization of novel hafnium-alkoxide-modified silazanes as well as on their microstructure evolution at high temperatures. The synthesis of hafnia-modified polymer-derived SiCN ceramic nanocomposites is performed via chemical modification of a polysilazane and of a cyclotrisilazane, followed by cross-linking and pyrolysis in argon atmosphere. Spectroscopic investigation (i.e., NMR, FTIR, and Raman) shows that the hafnium alkoxide reacts with the N-H groups of the cyclotrisilazane; in the case of polysilazane, reactions of N-H as well as Si-H groups with the alkoxide are observed. Consequently, scanning and transmission electron microscopy studies reveal that the ceramic nanocomposites obtained from cyclotrisilazane and polysilazane exhibited markedly different microstructures, which is a result of the different reaction pathways of the hafnium alkoxide with cyclotrisilazane and with polysilazane. Furthermore, the two prepared ceramic nanocomposites are unexpectedly found to exhibit extremely different high-temperature behavior with respect to decomposition and crystallization; this essential difference is found to be related to the different distribution of hafnium throughout the ceramic network in the two samples. Thus, the homogeneous distribution of hafnium observed in the polysilazane-derived ceramic leads to an enhanced thermal stability with respect to decomposition, whereas the local enrichment of hafnium within the matrix of the cyclotrisilazane-based sample induces a pronounced decomposition upon annealing at high temperatures. The results indicate that the chemistry and architecture of the precursor has a crucial effect on the microstructure of the resulting ceramic material and consequently on its high-temperature behavior. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Hafnium at subduction zones: isotopic budget of input and output fluxes; L'hafnium dans les zones de subduction: bilan isotopique des flux entrant et sortant

    Energy Technology Data Exchange (ETDEWEB)

    Marini, J.Ch

    2004-05-15

    Subduction zones are the primary regions of mass exchanges between continental crust and mantle of Earth through sediment subduction toward the earth's mantle and by supply of mantellic magmas to volcanic arcs. We analyze these mass exchanges using Hafnium and Neodymium isotopes. At the Izu-Mariana subduction zone, subducting sediments have Hf and Nd isotopes equivalent to Pacific seawater. Altered oceanic crust has Hf and Nd isotopic compositions equivalent to the isotopic budget of unaltered Pacific oceanic crust. At Luzon and Java subduction zones, arc lavas present Hf isotopic ratios highly radiogenic in comparison to their Nd isotopic ratios. Such compositions of the Luzon and Java arc lavas are controlled by a contamination of their sources by the subducted oceanic sediments. (author)

  19. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  20. A study of a production process for hafnium-free zirconium from zircon

    International Nuclear Information System (INIS)

    Ratanalert, N.

    1985-01-01

    The purpose of this experiment was to extract and purify the zirconium from zircon. The effects of time of extraction and stripping of zirconium, concentration of feed solution, concentration of hydrochloric acid in stripping process, equilibrium curve of extraction of zirconium and hafnium and equilibrium curve of stripping zirconium or scrubbing hafnium were studied from standard zirconium and hafnium. The results, subsequently were applied to the extraction procedures for zirconium from zircon. Minus 100 mesh zircon was fused with sodium hydroxide in the ratio of 1 : 6 at 700 degree C for l hour. After fusion the zirconate was leached with water and dissolved in hot concentrated hydrochloric acid. Zirconyl chloride octahydrate crystallized out when the solution was cooled. An agueons solution of zirconyl chloride was used as the feed to the hexone - thiocyanate solvent extraction process. This was prepared by dissolving zirconyl chloride octahydrate crystal in waster. This zirconium feed solution in 1 M HCl and 1 M N H 4 CNS was extracted with 2.7 m N H 4 CNS in hexone and then stripped with 3.6 M HCl the aqueous phase was got rid of thiocyanate ion by extracting with pure hexone, then the zirconium in aqueous phase was precipitated with sulfuric acid and ammonium hydroxide at pH 1.8 - 2.0 and zirconium oxide was obtained by ignition at 700 degree C. The process could be modified to improve the purity of zirconium by using cation exchange resin to get rid of thiocyanate ion after solvent extraction process

  1. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  2. Laser coating of hafnium on Ti6Al4 for biomedical applications

    CSIR Research Space (South Africa)

    Phume, L

    2012-12-01

    Full Text Available Al4V FOR BIOMEDICAL APPLICATIONS Lerato Phume 1, 2, S.L. Pityana 1, 2, C. Meacock 1, A.P.I Popoola 2 1. National Laser Centre, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria, 0001, South Africa 2. Department of Chemical... and Metallurgical Engineering, Tshwane University of Technology, Private Bag X 680, Pretoria, 0001, South Africa (b) (c) (e) To investigate laser surface coating of Ti6Al4V with preplaced Hafnium powder, to determine the influence of the energy density...

  3. Improvement of aging kinetics and precipitate size refinement in Mg–Sn alloys by hafnium additions

    Energy Technology Data Exchange (ETDEWEB)

    Behdad, S. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Zhou, L. [Department of Materials Science and Engineering and Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816 (United States); Henderson, H.B.; Manuel, M.V. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States); Sohn, Y. [Department of Materials Science and Engineering and Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816 (United States); Agarwal, A. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Boesl, B., E-mail: bboesl@fiu.edu [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States)

    2016-01-10

    Two Mg–Sn alloys were microalloyed by addition of Hafnium and their age-hardening response was studied at 200 °C. Time to reach peak hardness was significantly reduced and improved by Hf addition. TEM study showed Hf clusters in the close vicinity and at the surface of Mg{sub 2}Sn precipitates, which confirms that Hf clusters act as additional nucleation centers for Mg{sub 2}Sn precipitate formation. Our results support the validity of thermokinetic criterion proposed by Mendis for selection of microalloying elements in order to refine precipitate size, accelerate aging kinetics and enhance peak hardness.

  4. Critical evaluation of the determination of zirconium and hafnium by instrumental and radiochemical neutron activation analysis

    International Nuclear Information System (INIS)

    Burger, Mario; Kraehenbuehl, Urs

    1991-01-01

    Neutron activation analysis (instrument or radiochemical) is suitable for the determination of zirconium and hafnium in samples of geochemical origin only when sufficient attention is paid to inter-fering nuclides. The size of the necessary correction for INAA depends on the composition of the sample; this problem is discussed. The radio-chemical technique which is recommended involves separation of the samples, precipitations and anion-exchange separation. Results are given for various standard reference materials and for meteorites. (author). 12 refs.; 1 fig.; 9 tabs

  5. High temperature thermodynamics of solutions of oxygen in zirconium and hafnium

    International Nuclear Information System (INIS)

    Boureau, G.; Gerdanian, P.

    1984-01-01

    The Tian-Calvet microcalorimetric method has been applied to the determination at 1323 Kelvin of ΔH(O 2 ), the partial molar enthalpy of mixing of oxygen in zirconium and in hafnium. No measurable departure from Henry's law has been found for dilute solutions (ratio oxygen over metal smaller than 0.1). For concentrated solutions repulsive interactions are found in agreement with the existence of ordered structures at lower temperatures. The domain of homogeneity of zirconium has been found larger than previously assumed. (author)

  6. Complexing of zirconium and hafnium with ortho-aminobenzoic acid and paraaminobenzoic acid

    International Nuclear Information System (INIS)

    Alekseeva, I.I.; Nemzer, I.I.; Yuranova, L.I.; Borisova, V.V.; Prozorovskaya, Z.N.

    1977-01-01

    Formation of complexes between zirconium and hafnium and ortho- and para-aminobenzoic acids has been studied by the kinetic method. It has been found that at pH=1.3-2.0 and concentrations of metals 10 -5 -10 -6 mole complex compounds are formed with composition Me:L=1:2 and 1:1 (Me=Zr, Hf; L=ortho- or para-aminobenzoic acids). Stepwise constants and overall effective constants of complex formation have been calculated

  7. Investigation of interaction of zirconium and hafnium tetrafluorides with strontium fluoride

    International Nuclear Information System (INIS)

    Ratnikova, I.D.; Korenev, Yu.M.; Novoselova, A.V.

    1980-01-01

    Diagrams of the condensated state of systems SrF 2 -EF 4 have been plotted, where E represents Zr, Hf. In these systems, three intermediate compounds of Sr 3 EF 10 , Sr 2 EF 8 and Sr EF 6 compositions are formed. All those compounds melt incongruently at temperatures of 982, 865 and 750 deg C, respectively - zirconium salt; at temperatures of 1000, 900 and 820 deg C - hafnium salts. Fluoro-metallates of composition 2:1, and 1:1, exist in two polymorphic forms. Tetrafluorides were found to dissolve in strontium fluoride: they form solid solutions having fluorite structure

  8. Near net shape processing of zirconium or hafnium metals and alloys

    International Nuclear Information System (INIS)

    Evans, S.C.

    1992-01-01

    This patent describes a process for producing a metal shape. It comprises: plasma arc melting a metal selected from zirconium, hafnium and alloys thereof comprising at least about 90 w/o of these metals to form a liquid pool; pouring the metal form the pool into a mold to form a near net shape; and reducing the metal from its near net shape to a final size while maintaining the metal temperature below the alpha-beta transition temperature throughout the size reducing step

  9. Thermal behaviour of hafnium diethylenetriaminepentaacetate studied using the perturbed angular correlation technique

    Energy Technology Data Exchange (ETDEWEB)

    Chain, Cecilia Y. [Universidad Nacional de La Plata (Argentina). Dept. de Fisica; Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina); Rivas, Patricia [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina); Universidad Nacional de La Plata (Argentina). Facultad de Ciencias Agrarias y Forestales; Pasquevich, Alberto F. [Universidad Nacional de La Plata (Argentina). Dept. de Fisica; Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), La Plata (Argentina). IFLP-CCT; Comision de Investigaciones Cientificas de la Provincia de Buenos Aires (CIC-PBA) (Argentina)

    2014-07-01

    Polyaminecarboxilic ligands like diethylenetriaminepentaacetic acid form stable complexes with many heavy metal ions, excelling as cation chelants especially in the field of radiopharmacy. The aim of this work is to characterize, by using the Time Differential Perturbed Angular Correlations (TDPAC) technique, the hyperfine interactions at hafnium sites in hafnium diethylenetriaminepentaacetate and to investigate their evolution as temperature increases. TDPAC results for KHfDTPA.3H{sub 2}O obtained by chemical synthesis yield a well defined and highly asymmetric interaction of quadrupole frequency ω{sub Q} = 141 Mrad/s, which is consistent with the existence of a unique site for the metal in the crystal lattice. The thermal behaviour of the chelate is investigated by means of differential scanning calorimetry and thermogravimetrical analyses revealing that an endothermic dehydration of KHfDTPA.3H{sub 2}O takes place in one step between 80 C and 180 C. The anhydrous KHfDTPA thus arising is characterized by a fully asymmetric and well defined interaction of quadrupole frequency ω{sub Q} = 168 Mrad/s. (orig.)

  10. Rare-earth hafnium oxide materials for magnetohydrodynamic (MHD) generator application

    Energy Technology Data Exchange (ETDEWEB)

    Marchant, D. D; Bates, J. L.

    1979-01-01

    Several ceramic materials based on rare-earth hafnium oxides have been identified as potential high-temperature electrodes and low-temperature current leadouts for open cycle coal-fired MHD generator channels. The electrode-current leadouts combination must operate at temperatures between 400 and 2000K with an electrical conductivity greater than 10/sup -2/ ohm/sup -1/ cm/sup -1/. The electrodes will be exposed to flowing (linear flow rates up to 100 m/s) potassium seeded coal combustion gases (plasma core temperatures between 2400 to 3200/sup 0/K) and coal slag. During operation the electrodes must conduct direct electric current at densities near 1.5 amp/cm/sup 2/. Consequently, the electrodes must be resistant to electrochemical decompositions and interactions with both the coal slag and potassium salts (e.g., K/sub 2/SO/sub 4/, K/sub 2/CO/sub 3/). The current leadout materials are placed between the hot electrodes and the water-cooled copper structural members and must have electrical conductivities greater than 10/sup -2/ ohm/sup -1/ cm/sup -1/ between 1400 and 400/sup 0/K. The current leadouts must be thermally and electrochemically compatible with the electrode, copper, and potassium salts. Ideally, the electrodes and current leadouts should exhibit minimal ionic conductivity. The fabrication, electrical conductivity, and electrochemical corrosion of rare-earth hafnium oxide materials are discussed. (WHK)

  11. Thermal behaviour of hafnium diethylenetriaminepentaacetate studied using the perturbed angular correlation technique

    International Nuclear Information System (INIS)

    Chain, Cecilia Y.; Rivas, Patricia

    2014-01-01

    Polyaminecarboxilic ligands like diethylenetriaminepentaacetic acid form stable complexes with many heavy metal ions, excelling as cation chelants especially in the field of radiopharmacy. The aim of this work is to characterize, by using the Time Differential Perturbed Angular Correlations (TDPAC) technique, the hyperfine interactions at hafnium sites in hafnium diethylenetriaminepentaacetate and to investigate their evolution as temperature increases. TDPAC results for KHfDTPA.3H 2 O obtained by chemical synthesis yield a well defined and highly asymmetric interaction of quadrupole frequency ω Q = 141 Mrad/s, which is consistent with the existence of a unique site for the metal in the crystal lattice. The thermal behaviour of the chelate is investigated by means of differential scanning calorimetry and thermogravimetrical analyses revealing that an endothermic dehydration of KHfDTPA.3H 2 O takes place in one step between 80 C and 180 C. The anhydrous KHfDTPA thus arising is characterized by a fully asymmetric and well defined interaction of quadrupole frequency ω Q = 168 Mrad/s. (orig.)

  12. Preparation, structure and properties of hafnium compounds in the system Hf-C-N-O

    International Nuclear Information System (INIS)

    Brundiers, G.D.

    1975-08-01

    Highly dense, homogenous and single phase hafnium carbonitride samples (with low oxygen content) were prepared in the whole concentration range of the ternary cubic carbonitrides. Stoichiometric hafnium oxicarbides were also prepared within the range of solubility. The procedure involved the hot pressing of powders of HfC, HfN, Hf, Hf-Oxide and carbon at temperatures of 3,000 0 C and pressures up to 550 kpf/cm 2 using a novel technique. Small single crystals of slightly substoichiometric HfN were also repared. The densification of the powders was studied as a function of the non-metal concentration. Carbonitrides with N/Hf ratio of 0.37 were prepared in a high temperature autoclave operating at medium pressures by the reaction of HfC with nitrogen. All the samples were characterized by density measurements, chemical, X-ray and metallographic analysis and in some cases with the aid of quantitative metallography and microprobe analysis. Typical properties investigated were lattice parameter, thermal expansion, microhardness and electrical resistivity as function of the non-metal content. For specific concentrations extreme values in the properties are attained. With the aid of the valence electron concentration (VEC) parameter, the properties can be correlated with the density of states of electrons at the Fermi level. (orig./HK) [de

  13. Titrimetric determination of thiocyanate in solutions of the hafnium-zirconium separation process

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Botbol, Moises; Hernandez, M.H.

    1980-01-01

    The control of the thiocyanate concentration is necessary during the process of separating hafnium from zirconium by the hexone-thiocyanate method. Said control is carried out by titrimetric determination of thiocyanate in aqueous and organic solutions containing hydrochloric acid and ammonium thiocyanate in presence or absence of zirconium and/or hafnium. The method consists in a redox volumetric analysis using a cerium (IV) salt as titrating agent, and ferroine as the final point indicator. Owing to the instability of thiocyanate in an acid medium it is necessary to know previously if the decomposition of solutions with different concentration of ammonium thiocyanate and hydrochloric acid may have an influence upon the analytic results or may even invalidate them. In order to obtain reliable results, it must be taken into account that the stability of the solutions depends on the thiocyanate concentration, the acidity and the time elapsed from the moment the sample is taken until the test is performed. The decomposition process can be slowed down by cooling the solutions. This method allows to control the plant and does not require any special equipment. (M.E.L) [es

  14. Molecular structure, vibrational, HOMO-LUMO, MEP and NBO analysis of hafnium selenite

    Science.gov (United States)

    Yankova, Rumyana; Genieva, Svetlana; Dimitrova, Ginka

    2017-08-01

    In hydrothermal condition hafnium selenite with estimated chemical composition Hf(SeO3)2·n(H2O) was obtained and characterized by powder X-Ray diffraction, IR spectroscopy and thermogravimetrical analysis. The composition of the obtained crystalline phase was established as dihydrate of tetraaqua complex of the hafnium selenite [Hf(SeO3)2(H2O)4]·2H2O. The results of the thermogravimetrical analysis are shown that the two hydrated water molecules are released in the temperature interval 80-110°C, while the four coordinated water molecules - at 210-300°C. By DFT method, with Becke's three parameter exchange-functional combined with gradient-corrected correlation functional of Lee, Yang and Parr and 6-31G(d), 6-311 + G(d,p) basis sets and LANL2DZ for Hf atom were calculated the molecular structure, vibrational frequencies and thermodynamic properties of the structure. The UV-Vis spectra and electronic properties are presented. The energy and oscillator strength calculated by time-dependent density functional theory corresponds well with the experimental ones. Molecular electrostatic potential (MEP) was performed. Mulliken population analysis on atomic charges was also calculated. The stability and intramolecular interactions are interpreted by NBO analysis.

  15. Correlations between nuclear data and results of integral slab experiments. Case of hafnium

    International Nuclear Information System (INIS)

    Palau, J.M.

    1997-01-01

    The aim of this thesis was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor. In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods (APOLLO2 code) together with Monte Carlo- type simulations (TRIPOLI4 code) enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope 177 Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

  16. Correlations between nuclear data and integral slab experiments: the case of hafnium

    International Nuclear Information System (INIS)

    Palau, J.M.

    1999-01-01

    The aim of this work was to evaluate how much integral slab experiments can both reduce discrepancies between experimental results and calculations, and improve the knowledge of hafnium isotopes neutronic parameters by an adapted sensitivity and uncertainty method. A statistical approach, based on the generalized least squares method and perturbation theory, has been incorporated into our calculation system in order to deduce microscopic cross-section adjustments from observed integral measurements on this particular 'mock-up' reactor.In this study it has been established that the correlations between integral parameters and hafnium capture cross-sections enable specific variations in the region of resolved resonances at the level of multigroup and punctual cross-sections recommended data (JEF-2.2 evaluation) to be highlighted. The use of determinist methods together with Monte Carlo- type simulations enabled a depth analysis of the modelling approximations to be carried out. Furthermore, the sensitivity coefficient validation technique employed leads to a reliable assessment of the quality of the new basic nuclear data. In this instance, the adjustments proposed for certain isotope 177 Hf resonance parameters reduce, after error propagation, by 3 to 5 per cent the difference between experimental results and calculations related to this absorbent's efficiency. Beyond this particular application, the qualification methodology integrated in our calculation system should enable other basic sizing parameters to be treated (chemical / geometric data or other unexplored nuclear data) to make technological requirements less stringent. (author)

  17. Highly substituted zirconium and hafnium cyclopentadienyl bifunctional β-diketiminate complexes – Synthesis, structure, and catalytic activity towards ethylene polymerization

    Czech Academy of Sciences Publication Activity Database

    Havlík, A.; Lamač, Martin; Pinkas, Jiří; Varga, Vojtěch; Růžička, A.; Olejník, R.; Horáček, Michal

    2015-01-01

    Roč. 786, JUN 2015 (2015), s. 71-80 ISSN 0022-328X R&D Projects: GA ČR GAP106/10/0924 Institutional support: RVO:61388955 Keywords : Zirconium * Hafnium * Cyclopentadienyl Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.336, year: 2015

  18. Differential perturbed angular correlation: use of physico-chemical study of some hafnium complexes derivates of hydroxy acids and EDTA

    International Nuclear Information System (INIS)

    Silveira, J.G. da.

    1981-01-01

    Measures of quadrupolar interaction to nucleus level of the metal, in some hafnium complexes are presented, including the analysis by combustion, microanalysis, infrared spectroscopy and thermogravimetry. The hyperfine interaction parameters, the temperature effects and the thermal neutrons capture effects over the irradiated Hf Y (Y = EDTA) are also studied. (author)

  19. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  20. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  1. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  2. Microhardness and microplasticity of zirconium nitride

    International Nuclear Information System (INIS)

    Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

    1978-01-01

    To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

  3. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  4. Method of preparation of uranium nitride

    Science.gov (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  5. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson

    2014-01-01

    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

  6. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  7. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  8. Alloy Effects on the Gas Nitriding Process

    Science.gov (United States)

    Yang, M.; Sisson, R. D.

    2014-12-01

    Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

  9. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    Directory of Open Access Journals (Sweden)

    S. Riedel

    2016-09-01

    Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  10. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  11. Thermal expansion studies on Hafnium titanate (HfTiO4)

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Subramanian, G.G.S.; Antony, M.P.

    2006-01-01

    The lattice thermal expansion characteristics of hafnium titanate (HfTiO 4 ) have been studied by measuring the lattice parameter as a function of temperature by high temperature X-ray diffraction technique (HT-XRD) in the temperature range 298-1973K. Percentage linear thermal expansion and mean linear thermal expansion coefficients were computed from the lattice parameter data. The thermal expansion of HfTiO 4 is highly anisotropic. The expansivity along 'a' axis is large; as compared to the expansivity along 'b' axis which is negative below 1073 K. The percentage linear thermal expansion in the temperature range 298-1973 K along a, b and c axis are 2.74, 0.901 and 1.49 respectively. Thermal expansion values obtained in the present study are in reasonable agreement with the existing thermal expansion data. (author)

  12. Density and surface tension of melts of zirconium and hafnium fluorides with lithium fluoride

    International Nuclear Information System (INIS)

    Katyshev, S.F.; Artemov, V.V.; Desyatnik, V.N.

    1988-01-01

    A study was conducted to determine the temperature dependence of the density and surface tension of melts of LiF-ZrF 4 and LiF-HfF 4 . Density and surface tension were determined by the method of maximum pressure in an argon bubble. On the basis of experimental data over the entire concentration range the molar volumes and their relative deviations from the additive molar volumes were calculated for 1100 0 K. The positive deviations of the molar volumes from additivity in the LiF-HfF 4 system (22.45%) were greater than in the LiF-ZrF 4 system (15.75%). This indicated that the reaction with lithium fluoride is intensified with the switch to the hafnium fluoride. Results also demonstrated that the fluorides are surface-active components in the molten mixtures

  13. Extraction of hafnium with chelating agents from aqueous-alcoholic solutions

    International Nuclear Information System (INIS)

    Hala, J.; Prihoda, J.

    1975-01-01

    The extraction was studied of hafnium into solutions of N-benzoyl-N-phenylhydroxylamine, 2-thenoyltrifluoroacetone and di-n-butylphosphoric acid in benzene, toluene, chloroform and tetrachloromethane from aqueous alcoholic solutions with a formal acidity of 2M-HClO 4 . Methyl-, ethyl-, n- and isopropyl- and tert-butyl alcohol were used as organic components in the mixed aqueous-organic phase. In the extraction into N-benzoyl-N-phenylhydroxylamine the presence of the alcohols resulted in synergic effects analogous to the previously described extraction by substituted benzoylpyrazolone. With the other two extractants, the effect of the alcohols was antagonistic, due to the interaction of alcohol or water with the reagent in the organic phase, and to the decrease in the reagent distribution constant. (author)

  14. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  15. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-01-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

  16. Atom-vacancy ordering and magnetic susceptibility of nonstoichiometric hafnium carbide

    International Nuclear Information System (INIS)

    Gusev, A.I.; Zyryanova, A.N.

    1999-01-01

    Experimental results on magnetic susceptibility of nonstoichiometric hafnium carbide HfC y (0.6 0.71 , HfC 0.78 and HfC 0.83 in the range of 870-930 K the anomalies are revealed which are associated with superstructure short-range ordering in a non-metallics sublattice. It is shown that a short-range order in HfC 0.71 and HfC 0.78 carbides corresponds to Hf 3 C 2 ordered phase, and in HfC 0.83 carbide - to Hf 6 C 5 ordered phase. HfC 0.78 carbide is found to possesses zero magnetic susceptibility in temperature range 910-980 K [ru

  17. Sub-10 nm low current resistive switching behavior in hafnium oxide stack

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn [Institute of Microelectronics, Peking University, 100871 Beijing (China); IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Celano, U.; Xu, Z.; Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Goux, L.; Fantini, A.; Degraeve, R.; Youssef, A.; Jurczak, M. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Liu, L., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; Cheng, Y.; Kang, J. [Institute of Microelectronics, Peking University, 100871 Beijing (China)

    2016-03-21

    In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 × 50 nm{sup 2} device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design.

  18. Solvent extraction of hafnium(IV) by dinonylnaphthalene sulfonic acid from mixed aqueous-organic media

    International Nuclear Information System (INIS)

    Hala, J.; Piperkovova, H.

    1979-01-01

    The extraction of hafnium(IV) by heptane and toluene solutions of dinonylnaphthalene sulfonic acid (HD) from mixed aqueous-organic solutions has been studied. Alcohols, ketones, carboxylic acids, cyclic ethers, dimethylsulfoxide and dimethylformamide were used as the organic component of the mixed phase. Methanol, ethanol, formic acid and dioxane increased the extractability of Hf(IV) whereas other solvents showed only an antagonistic effect. The results were discussed from the point of view of the changes in micellar structure of HD, and compared with the uptake of Hf(IV) by resinous cation exchangers. The solubilization by HD of alcohols, carboxylic acids and dimethylsulfoxide was demonstrated by using the corresponding 14 C and 35 S labelled compounds. (author)

  19. Study of bulk Hafnium oxide (HfO2) under compression

    Science.gov (United States)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  20. Separation of hafnium from zirconium in their tetrachloride solution in molten alkali metal chlorides

    Energy Technology Data Exchange (ETDEWEB)

    Salyulev, A B; Kudyakov, V Ya; Smirnov, M V; Moskalenko, N I [AN SSSR, Sverdlovsk. Inst. Ehlektrokhimii

    1984-08-01

    The coefficient of HfCl/sub 4/ and ZrCl/sub 4/ separation in the process of vapour sublimation from their solutions in molten NaCl, KCl, CsCl, NaCl-KCl and NaCl-CsCl equimolar mixtures is found to vary in the series from approximately 1.10 to approximately 1.22 and practically not to depend on the temperature (in the 600-910 deg) range and concentration (2-25 mol.% ZrCl/sub 4/+HfCl/sub 4/). HfCl/sub 4/ and ZrCl/sub 4/ are shown to form almost perfect solutions with each other, which in their turn form imperfect solutions with molten alkali metal chlorides, with the strength of hafnium complex chloride anions increasing higher than that of zirconium in the series from NaCl to CsCl.

  1. Separation of hafnium from zirconium in their tetrachloride solution in molten alkali metal chlorides

    International Nuclear Information System (INIS)

    Salyulev, A.B.; Kudyakov, V.Ya.; Smirnov, M.V.; Moskalenko, N.I.

    1984-01-01

    The coefficient of HfCl 4 and ZrCl 4 separation in the process of vapour sublimation from their solutions in molten NaCl, KCl, CsCl, NaCl-KCl and NaCl-CsCl equimolar mixtures is found to vary in the series from approximately 1.10 to approximately 1.22 and practically not to depend on the temperature (in the 600-910 deg) range and concentration (2-25 mol.% ZrCl 4 +HfCl 4 ). HfCl 4 and ZrCl 4 are shown to form almost perfect solutions with each other, which in their turn form imperfect solutions with molten alkali metal chlorides, with the strength of hafnium complex chloride anions increasing higher than that of zirconium in the series from NaCl to CsCl

  2. Hafnium at subduction zones: isotopic budget of input and output fluxes

    International Nuclear Information System (INIS)

    Marini, J.Ch.

    2004-05-01

    Subduction zones are the primary regions of mass exchanges between continental crust and mantle of Earth through sediment subduction toward the earth's mantle and by supply of mantellic magmas to volcanic arcs. We analyze these mass exchanges using Hafnium and Neodymium isotopes. At the Izu-Mariana subduction zone, subducting sediments have Hf and Nd isotopes equivalent to Pacific seawater. Altered oceanic crust has Hf and Nd isotopic compositions equivalent to the isotopic budget of unaltered Pacific oceanic crust. At Luzon and Java subduction zones, arc lavas present Hf isotopic ratios highly radiogenic in comparison to their Nd isotopic ratios. Such compositions of the Luzon and Java arc lavas are controlled by a contamination of their sources by the subducted oceanic sediments. (author)

  3. Rapid screening of nuclear grade zirconium silicate without separation of hafnium from the bulk matrix

    International Nuclear Information System (INIS)

    Venkatesh, Manisha; Sharma, P.K.; Avhad, D.K.; Basu, H.; Singhal, R.K.; Reddy, A.V.R.

    2014-01-01

    Zirconium silicate, also zirconium orthosilicate, (ZrSiO 4 ) is a chemical compound, and occurs in nature as zircon, a silicate mineral. The concentration of Hafnium in nuclear grade Zirconium must be less than 0.2% w/w of Zr. In view of this it must be accurately chemically characterized before issuing a certification for export under non nuclear category. As the chemistry of Zr and Hf is similar, it is difficult to separate Hf by direct wet chemical method. During this work, concentration of Hf in zirconium silicate was measured by Field Portable X-ray Fluorescence (FPXRF) and results obtained were validated by using detailed chemical method. FPXRF spectrometry has become a common analytical technique for on-site screening and fast turnaround analysis of contaminant elements in environmental samples

  4. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A

    2002-01-01

    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  5. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  6. Surface analysis in steel nitrides by using Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Figueiredo, R.S. de.

    1991-07-01

    The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

  7. Simple process to fabricate nitride alloy powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

    2013-01-01

    Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

  8. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2015-01-01

    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

  9. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  10. Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyralozone from aqueous-alcoholic solutions

    International Nuclear Information System (INIS)

    Hala, J.; Prihoda, J.

    1975-01-01

    Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyrazolone (HL) in benzene, toluene, chloroform and tetrachloromethane from aqueous-alcoholic solutions of the formal acidity of 2M-HClO 4 was studied. Methyl, ethyl, n- and isopropyl, tert-butyl and allyl alcohol as well as ethylene glycol monomethyl ether and propylene glycol were used as organic components of the mixed aqueous-organic phase. Their presence in some cases resulted in a synergic increase in the distribution ratio of hafnium. The increase is interpreted using the results of a slope analysis and measurements of the alcohol distribution and the relative permittivity of the organic phase. It is suggested that HfL 4 molecules were solvated by alcohol molecules in the organic phase. At high alcohol concentration synergism changed into antagonism. This was caused by changes in the distribution of HL and its interaction with the alcohol in the organic phase. (author)

  11. New Routes to Lanthanide and Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

    2009-06-15

    The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

  12. Hafnium isotope evidence for a transition in the dynamics of continental growth 3.2 Gyr ago.

    Science.gov (United States)

    Næraa, T; Scherstén, A; Rosing, M T; Kemp, A I S; Hoffmann, J E; Kokfelt, T F; Whitehouse, M J

    2012-05-30

    Earth's lithosphere probably experienced an evolution towards the modern plate tectonic regime, owing to secular changes in mantle temperature. Radiogenic isotope variations are interpreted as evidence for the declining rates of continental crustal growth over time, with some estimates suggesting that over 70% of the present continental crustal reservoir was extracted by the end of the Archaean eon. Patterns of crustal growth and reworking in rocks younger than three billion years (Gyr) are thought to reflect the assembly and break-up of supercontinents by Wilson cycle processes and mark an important change in lithosphere dynamics. In southern West Greenland numerous studies have, however, argued for subduction settings and crust growth by arc accretion back to 3.8 Gyr ago, suggesting that modern-day tectonic regimes operated during the formation of the earliest crustal rock record. Here we report in situ uranium-lead, hafnium and oxygen isotope data from zircons of basement rocks in southern West Greenland across the critical time period during which modern-like tectonic regimes could have initiated. Our data show pronounced differences in the hafnium isotope-time patterns across this interval, requiring changes in the characteristics of the magmatic protolith. The observations suggest that 3.9-3.5-Gyr-old rocks differentiated from a >3.9-Gyr-old source reservoir with a chondritic to slightly depleted hafnium isotope composition. In contrast, rocks formed after 3.2 Gyr ago register the first additions of juvenile depleted material (that is, new mantle-derived crust) since 3.9 Gyr ago, and are characterized by striking shifts in hafnium isotope ratios similar to those shown by Phanerozoic subduction-related orogens. These data suggest a transitional period 3.5-3.2 Gyr ago from an ancient (3.9-3.5 Gyr old) crustal evolutionary regime unlike that of modern plate tectonics to a geodynamic setting after 3.2 Gyr ago that involved juvenile crust generation by plate

  13. Results for heterogeneous poisoning of the critical HTR-test facility KAHTER using absorber elements containing hafnium and boron

    International Nuclear Information System (INIS)

    Drueke, V.; Filges, D.; Nabi, R.; Neef, R.D.; Paul, N.; Schaal, H.

    1979-10-01

    Experiments and checking computations for investigating the initial-core poisoning of the pebble bed high temperature reactor are described. Following the example of the THTR-300, THTR absorber elements poisoned with hafnium/boron were added to the THTR fuel- and graphite elements of the KAHTER core. Three different hafnium-boron poisoned core loadings, corresponding to 2.7, 5.3 and 8% reactivity compensation, were used in the experiments. For purposes of comparison, two cores exclusively boron poisoned were also studied. The poisoning of these cores correspond to 2.7 and 8% reactivity compensation. The experiments and checking computations should serve to test the accuracy of the theoretical models and data sets in modeling the reactivity effects of absorber poisoned elements in the THTR. In particular, the applicability of the nuclear data of hafnium and the treatment of resonance calculations should be verified. In addition, to determining critical masses and ksub(eff), special emphasis was placed in the experiments on the exact determination of all reactivity effects. In some cases, repeated loading of a configuration also provided a measure of the reproducibility of ksub(eff). The experiments were checked computationally using the GAMTEREX code package and the program system RSYST. These two computation packages contain different data bases, - although the hafnium data are identical -, and the computing models differ in certain phases of the calculations. Both code systems compute ksub(eff) values to within the present accuracy requirements, whereas the program system RSYST gives better agreement with experimental measurements. (orig.) 891 RW/orig. 892 RDG [de

  14. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  15. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.

    2005-01-01

    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  16. Surface modification of titanium by plasma nitriding

    Directory of Open Access Journals (Sweden)

    Kapczinski Myriam Pereira

    2003-01-01

    Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

  17. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1999-01-01

    As a prerequisite for predictability of properties obtained by a nitriding treatment of iron-based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present (even) the description of thermodynamic equilibrium...... of pure iron-nitrogen phases has not been achieved fully. It has been shown that taking into account ordering of nitrogen in the epsilon and gamma' iron-nitride phases, leads to an improved understanding of the Fe-N phase diagram. Although thermodynamics indicate the state the system strives for......, the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

  18. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  19. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  20. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  1. Nano-scale Radiotherapy-NBTXR3 Hafnium Oxide Nanoparticles as Promising Cancer Therapy

    International Nuclear Information System (INIS)

    Maggiorella, L.; Barouch, G.; Devaux, C.; Pottier, A.; Levy, L.; Deutsch, E.; Bourhis, J.; Borghi, E.

    2011-01-01

    Complete text of publication follows: Background: There is considerable interest in approaches that could improve the therapeutic window of radiotherapy, which represents a crucial modality of treatment in oncology. We present the rationale for designing NBTXR3 nanoparticles activated by radiotherapy and validate the concept. We performed the Monte Carlo calculations for the first time based on the 'local model' simulation that showed a dose enhancement of radiation to tumour cells of approximately nine-fold. NBTXR3 was shown to deposit high energy when the ionizing radiation source is 'on' and to have chemically inert behavior in cellular and subcellular systems demonstrated by very good systemic tolerance, thus decreasing potential health hazards. Material and Methods: We used conventional methods, implemented in different ways, to explore interactions of high Z matter and ionizing radiation with biological systems. In addition, microtomography was performed to explore the nanoparticle volume occupancy inside the tumour and its persistence overtime in mouse tumour models. The antitumour activity of NBTXR3 and tolerance were evaluated in Ewing tumour (A673) and fibrosarcoma (HT1080) using high energy source. Results and Conclusion: We created and developed NBTXR3 nanoparticles with a crystalline hafnium oxide core which provide high electron density structure and inert behavior in biological media. NBTXR3 nanoparticles' characteristics, size, charge and shape, allow for efficient interaction with biological entities, cell membrane binding and cellular uptake. The nanoparticles were shown to form clusters at the subcellular level in tumour models. Of most importance, we show NBTXR3 intra-tumour bioavailability with dispersion of nanoparticles in the three dimensions and persistence within the tumour structure, supporting the use of NBTXR3 as effective antitumour therapeutic agent. Antitumour activity of NBTXR3 showed marked advantage in terms of survival, tumour

  2. Hafnium-doped hydroxyapatite nanoparticles with ionizing radiation for lung cancer treatment.

    Science.gov (United States)

    Chen, Min-Hua; Hanagata, Nobutaka; Ikoma, Toshiyuki; Huang, Jian-Yuan; Li, Keng-Yuan; Lin, Chun-Pin; Lin, Feng-Huei

    2016-06-01

    Recently, photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. However, the optical approach of PDT is limited by tissue penetration depth of visible light. In this study, we propose that a ROS-enhanced nanoparticle, hafnium-doped hydroxyapatite (Hf:HAp), which is a material to yield large quantities of ROS inside the cells when the nanoparticles are bombarded with high penetrating power of ionizing radiation. Hf:HAp nanoparticles are generated by wet chemical precipitation with total doping concentration of 15mol% Hf(4+) relative to Ca(2+) in HAp host material. The results show that the HAp particles could be successfully doped with Hf ions, resulted in the formation of nano-sized rod-like shape and with pH-dependent solubility. The impact of ionizing radiation on Hf:HAp nanoparticles is assessed by using in-vitro and in-vivo model using A549 cell line. The 2',7'-dichlorofluorescein diacetate (DCFH-DA) results reveal that after being exposed to gamma rays, Hf:HAp could significantly lead to the formation of ROS in cells. Both cell viability (WST-1) and cytotoxicity (LDH) assay show the consistent results that A549 lung cancer cell lines are damaged with changes in the cells' ROS level. The in-vivo studies further demonstrate that the tumor growth is inhibited owing to the cells apoptosis when Hf:HAp nanoparticles are bombarded with ionizing radiation. This finding offer a new therapeutic method of interacting with ionizing radiation and demonstrate the potential of Hf:HAp nanoparticles in tumor treatment, such as being used in a palliative treatment after lung surgical procedure. Photodynamic therapy (PDT) is one of the new clinical options by generating cytotoxic reactive oxygen species (ROS) to kill cancer cells. Unfortunately, the approach of PDT is usually limited to the treatment of systemic disease and deeper tumor, due to the limited tissue penetration depth of visible

  3. Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

    2014-07-01

    Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

  4. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-10-01

    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  5. Nitride fuels irradiation performance data base

    International Nuclear Information System (INIS)

    Brozak, D.E.; Thomas, J.K.; Peddicord, K.L.

    1987-01-01

    An irradiation performance data base for nitride fuels has been developed from an extensive literature search and review that emphasized uranium nitride, but also included performance data for mixed nitrides [(U,Pu)N] and carbonitrides [(U,Pu)C,N] to increase the quantity and depth of pin data available. This work represents a very extensive effort to systematically collect and organize irradiation data for nitride-based fuels. The data base has many potential applications. First, it can facilitate parametric studies of nitride-based fuels to be performed using a wide range of pin designs and operating conditions. This should aid in the identification of important parameters and design requirements for multimegawatt and SP-100 fuel systems. Secondly, the data base can be used to evaluate fuel performance models. For detailed studies, it can serve as a guide to selecting a small group of pin specimens for extensive characterization. Finally, the data base will serve as an easily accessible and expandable source of irradiation performance information for nitride fuels

  6. Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

    DEFF Research Database (Denmark)

    Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

    2001-01-01

    grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically...

  7. Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided

    International Nuclear Information System (INIS)

    Medina F, A.; Naquid G, C.

    2000-01-01

    It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

  8. Recoil Induced Room Temperature Stable Frenkel Pairs in a-Hafnium Upon Thermal Neutron Capture

    Science.gov (United States)

    Butz, Tilman; Das, Satyendra K.; Dey, Chandi C.; Ghoshal, Shamik

    2013-11-01

    Ultrapure hafnium metal (110 ppm zirconium) was neutron activated with a thermal neutron flux of 6:6 · 1012 cm-2s-1 in order to obtain 181Hf for subsequent time differential perturbed angular correlation (TDPAC) experiments using the nuclear probe 181Hf(β-) 181Ta. Apart from the expected nuclear quadrupole interaction (NQI) signal for a hexagonal close-packed (hcp) metal, three further discrete NQIs were observed with a few percent fraction each. The TDPAC spectra were recorded for up to 11 half lives with extreme statistical accuracy. The fitted parameters vary slightly within the temperature range between 248 K and 373 K. The signals corresponding to the three additional sites completely disappear after `annealing' at 453 K for one minute. Based on the symmetry of the additional NQIs and their temperature dependencies, they are tentatively attributed to Frenkel pairs produced by recoil due to the emission of a prompt 5:694 MeV -ray following thermal neutron capture and reported by the nuclear probe in three different positions. These Frenkel pairs are stable up to at least 373 K.

  9. The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

    Science.gov (United States)

    Nguyen, Duc; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Girolami, Gregory S.; Lyding, Joseph; Gruebele, Martin

    2014-11-01

    Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB2 glass surface, two-state hopping of 1-2 nm diameter cooperatively rearranging regions or "clusters" occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how "mixed" features can show up in surface dynamics of glasses.

  10. Characteristics of laser produced plasmas of hafnium and tantalum in the 1-7 nm region

    Science.gov (United States)

    Li, Bowen; Otsuka, Takamitsu; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry; Hara, Hiroyuki; Arai, Goki; Tamura, Toshiki; Ono, Yuichi; Dinh, Thanh-Hung; Higashiguchi, Takeshi

    2017-11-01

    Soft X-ray (SXR) spectra from hafnium and tantalum laser produced plasmas were recorded in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 170 ps and 10 ns, respectively, operating at a range of power densities. The maximum focused peak power density was 2. 3 × 1014 W cm-2 for 170 ps pulses and 1. 8 × 1012 W cm-2 for 10 ns pulses, respectively. Two intense quasicontinuous intensity bands resulting from n = 4 - n = 4 and n = 4 - n = 5 unresolved transition arrays (UTAs) dominate both sets of experimental spectra. Comparison with calculations performed with the Cowan suite of atomic structure codes as well as consideration of previous experimental and theoretical results aided identification of the most prominent features in the spectra. For the 10 ns spectrum, the highest ion stage that could be identified from the n = 4 - n = 5 arrays were lower than silver-like Hf25+ and Ta26+ (which has a 4 d 104 f ground configuration) indicating that the plasma temperature attained was too low to produce ions with an outermost 4 d subshell, while for the 170 ps plasmas the presence of significantly higher stages was deduced and lines due to 4 d-5 p transitions were clearly evident. Furthermore, we show an enhancement of emission from tantalum using dual laser irradiation, and the effect of pre-pulse durations and delay times between two pulses are demonstrated.

  11. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  12. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

    Science.gov (United States)

    Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

    2017-10-01

    Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

  13. Tuning the magnetic properties of pure hafnium by high pressure torsion

    International Nuclear Information System (INIS)

    Cepeda-Jiménez, C.M.; Beltrán, J.I.; Hernando, A.; García, M.A.; Ynduráin, F.; Zhilyaev, A.; Pérez-Prado, M.T.

    2017-01-01

    This work demonstrates that room temperature (RT) ferromagnetism might be triggered in pure hafnium (Hf), a classic paramagnet, by severe plastic deformation (SPD) via high pressure torsion (HPT). The origin of this phenomenon is elucidated by a combined approach including density functional theory (DFT) calculations and transmission electron microscopy (TEM). In particular, it is shown that the elastic lattice distorsions induced in pure Hf as a consequence of grain refinement down to the nanocrystalline regime by HPT lead to the development of a new monoclinic crystalline structure that exhibits a spontaneous magnetization at RT. DFT calculations are utilized to prove that local stretching of the original pure Hf hexagonal close packed (hcp) lattice along specific pyramidal directions, due to the presence of internal stresses in the deformed nanostructure, may give rise to the emergence of the monoclinic phase, which is endowed with a net magnetic moment. An excellent agreement is found between DFT calculations and experimental TEM observations, which provide a first evidence of the presence of the pure Hf monoclinic crystal lattice. This work shows that SPD may constitute a viable, yet widely unexplored, strategy to tune the magnetic properties and, in particular, to induce RT ferromagnetism in bulk non-magnetic metals.

  14. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

    International Nuclear Information System (INIS)

    Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

    2004-01-01

    We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

  15. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

    2015-01-01

    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

  16. Preparing microspheres of actinide nitrides from carbon containing oxide sols

    International Nuclear Information System (INIS)

    Triggiani, L.V.

    1975-01-01

    A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

  17. Advancing liquid metal reactor technology with nitride fuels

    International Nuclear Information System (INIS)

    Lyon, W.F.; Baker, R.B.; Leggett, R.D.; Matthews, R.B.

    1991-08-01

    A review of the use of nitride fuels in liquid metal fast reactors is presented. Past studies indicate that both uranium nitride and uranium/plutonium nitride possess characteristics that may offer enhanced performance, particularly in the area of passive safety. To further quantify these effects, the analysis of a mixed-nitride fuel system utilizing the geometry and power level of the US Advanced Liquid Metal Reactor as a reference is described. 18 refs., 2 figs., 2 tabs

  18. In-Pile Experiment of a New Hafnium Aluminide Composite Material to Enable Fast Neutron Testing in the Advanced Test Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Donna Post Guillen; Douglas L. Porter; James R. Parry; Heng Ban

    2010-06-01

    A new hafnium aluminide composite material is being developed as a key component in a Boosted Fast Flux Loop (BFFL) system designed to provide fast neutron flux test capability in the Advanced Test Reactor. An absorber block comprised of hafnium aluminide (Al3Hf) particles (~23% by volume) dispersed in an aluminum matrix can absorb thermal neutrons and transfer heat from the experiment to pressurized water cooling channels. However, the thermophysical properties, such as thermal conductivity, of this material and the effect of irradiation are not known. This paper describes the design of an in-pile experiment to obtain such data to enable design and optimization of the BFFL neutron filter.

  19. Plasma nitridation optimization for sub-15 A gate dielectrics

    NARCIS (Netherlands)

    Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

  20. Ion nitriding in 316=L stainless steel

    International Nuclear Information System (INIS)

    Rojas-Calderon, E.L.

    1989-01-01

    Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

  1. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  2. Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

    International Nuclear Information System (INIS)

    Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

    2007-01-01

    Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

  3. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

    Science.gov (United States)

    Lai, Kun-Yu

    Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

  4. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1997-01-01

    As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... for process control of gaseous nitriding by monitoring the partial pressure of oxygen in the furnace using a solid state electrolyte is provided. At the time the work was carried out the authors were in the Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft...

  5. The energy landscape of glassy dynamics on the amorphous hafnium diboride surface

    International Nuclear Information System (INIS)

    Nguyen, Duc; Girolami, Gregory S.; Mallek, Justin; Cloud, Andrew N.; Abelson, John R.; Lyding, Joseph; Gruebele, Martin

    2014-01-01

    Direct visualization of the dynamics of structural glasses and amorphous solids on the sub-nanometer scale provides rich information unavailable from bulk or conventional single molecule techniques. We study the surface of hafnium diboride, a conductive ultrahigh temperature ceramic material that can be grown in amorphous films. Our scanning tunneling movies have a second-to-hour dynamic range and single-point current measurements extend that to the millisecond-to-minute time scale. On the a-HfB 2 glass surface, two-state hopping of 1–2 nm diameter cooperatively rearranging regions or “clusters” occurs from sub-milliseconds to hours. We characterize individual clusters in detail through high-resolution (<0.5 nm) imaging, scanning tunneling spectroscopy and voltage modulation, ruling out individual atoms, diffusing adsorbates, or pinned charges as the origin of the observed two-state hopping. Smaller clusters are more likely to hop, larger ones are more likely to be immobile. HfB 2 has a very high bulk glass transition temperature T g , and we observe no three-state hopping or sequential two-state hopping previously seen on lower T g glass surfaces. The electronic density of states of clusters does not change when they hop up or down, allowing us to calibrate an accurate relative z-axis scale. By directly measuring and histogramming single cluster vertical displacements, we can reconstruct the local free energy landscape of individual clusters, complete with activation barrier height, a reaction coordinate in nanometers, and the shape of the free energy landscape basins between which hopping occurs. The experimental images are consistent with the compact shape of α-relaxors predicted by random first order transition theory, whereas the rapid hopping rate, even taking less confined motion at the surface into account, is consistent with β-relaxations. We make a proposal of how “mixed” features can show up in surface dynamics of glasses

  6. Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

    Science.gov (United States)

    Quevedo Lopez, Manuel Angel

    Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

  7. Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Berdova, Maria, E-mail: maria.berdova@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland); Wiemer, Claudia; Lamperti, Alessio; Tallarida, Grazia; Cianci, Elena [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Lamagna, Luca; Losa, Stefano; Rossini, Silvia; Somaschini, Roberto; Gioveni, Salvatore [STMicroelectronics, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Fanciulli, Marco [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Università degli studi di Milano Bicocca, Dipartimento di Scienza dei Materiali, 20126, Milano (Italy); Franssila, Sami, E-mail: sami.franssila@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland)

    2016-04-15

    Graphical abstract: - Highlights: • Atomic layer deposition of HfO{sub 2} from (CpMe){sub 2}Hf(OMe)Me or Hf(NMeEt){sub 4} and ozone for potential applications in microelectromechanical systems. • ALD HfO{sub 2} protects aluminum substrates from degradation in moist environment and at the same time retains good reflectance properties of the underlying material. • The resistance of hafnium dioxide to moist environment is independent of chosen precursors. - Abstract: This work presents the investigation of HfO{sub 2} deposited by atomic layer deposition (ALD) from either HfD-CO4 or TEMAHf and ozone for microelectromechanical systems (MEMS) applications, in particular, for environmental protection of aluminum micromirrors. This work shows that HfO{sub 2} films successfully protect aluminum in moist environment and at the same time retain good reflectance properties of underlying material. In our experimental work, the chemical composition, crystal structure, electronic density and roughness of HfO{sub 2} films remained the same after one week of humidity treatment (relative humidity of 85%, 85 °C). The reflectance properties underwent only minor changes. The observed shift in reflectance was only from 80–90% to 76–85% in 400–800 nm spectral range when coated with ALD HfO{sub 2} films grown with Hf(NMeEt){sub 4} and no shift (remained in the range of 68–83%) for films grown from (CpMe){sub 2}Hf(OMe)Me.

  8. Conducting metal oxide and metal nitride nanoparticles

    Science.gov (United States)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  9. Molecular dynamics studies of actinide nitrides

    International Nuclear Information System (INIS)

    Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

    2004-01-01

    The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

  10. Local heating with titanium nitride nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.

    2013-01-01

    We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

  11. Optical properties of nitride nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

    2011-01-15

    In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  13. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  14. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  15. Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

    International Nuclear Information System (INIS)

    Qi, F.; Leng, Y.X.; Huang, N.; Bai, B.; Zhang, P.Ch.

    2007-01-01

    17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film

  16. Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods

    KAUST Repository

    Ramos-Gonzá lez, R.; Garcí a-Cerda, L. A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2010-01-01

    This work reports the preparation and characterization of hafnium (IV) oxide (HfO2) nanoparticles grown by derived sol-gel routes that involves the formation of an organic polymeric network. A comparison between polymerized complex (PC) and polymer precursor (PP) methods is presented. For the PC method, citric acid (CA) and ethylene glycol (EG) are used as the chelating and polymerizable reagents, respectively. In the case of PP method, poly(acrylic acid) (PAA) is used as the chelating reagent. In both cases, different precursor gels were prepared and the hafnium (IV) chloride (HfCl4) molar ratio was varied from 0.1 to 1.0 for the PC method and from 0.05 to 0.5 for the PP method. In order to obtain the nanoparticles, the precursors were heat treated at 500 and 800 °C. The thermal characterization of the precursor gels was carried out by thermogravimetric analysis (TGA) and the structural and morphological characterization by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns of the samples obtained by both methods shows the formation of HfO2 at 500 °C with monoclinic crystalline phase. The PC method exhibited also the cubic phase. Finally, the HfO2 nanoparticles size (4 to 11 nm) was determined by TEM and XRD patterns. © (2010) Trans Tech Publications.

  17. Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods

    KAUST Repository

    Ramos-González, R.

    2010-03-01

    This work reports the preparation and characterization of hafnium (IV) oxide (HfO2) nanoparticles grown by derived sol-gel routes that involves the formation of an organic polymeric network. A comparison between polymerized complex (PC) and polymer precursor (PP) methods is presented. For the PC method, citric acid (CA) and ethylene glycol (EG) are used as the chelating and polymerizable reagents, respectively. In the case of PP method, poly(acrylic acid) (PAA) is used as the chelating reagent. In both cases, different precursor gels were prepared and the hafnium (IV) chloride (HfCl4) molar ratio was varied from 0.1 to 1.0 for the PC method and from 0.05 to 0.5 for the PP method. In order to obtain the nanoparticles, the precursors were heat treated at 500 and 800 °C. The thermal characterization of the precursor gels was carried out by thermogravimetric analysis (TGA) and the structural and morphological characterization by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD patterns of the samples obtained by both methods shows the formation of HfO2 at 500 °C with monoclinic crystalline phase. The PC method exhibited also the cubic phase. Finally, the HfO2 nanoparticles size (4 to 11 nm) was determined by TEM and XRD patterns. © (2010) Trans Tech Publications.

  18. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  19. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

  20. Alkaline fuel cell with nitride membrane

    Science.gov (United States)

    Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

    2017-06-01

    The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

  1. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  2. Covalent biofunctionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  3. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  4. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  5. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  6. Metal surface nitriding by laser induced plasma

    Science.gov (United States)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  7. Synthesis and characterization of hafnium carbide microcrystal chains with a carbon-rich shell via CVD

    International Nuclear Information System (INIS)

    Tian, Song; Li, Hejun; Zhang, Yulei; Liu, Sen; Fu, Yangxi; Li, Yixian; Qiang, Xinfa

    2013-01-01

    Graphical abstract: Novel HfC microcrystal chains have been synthesized via a catalyst-assisted chemical vapor deposition process. SEM results show the chains have a periodically changing diameter and a nanoscale sharpening tip. Analysis of TEM/SAED/EELS/EDX data shows the single-crystal chains grow along a [0 0 1] direction and consist of a HfC core and a thin carbon-rich shell with embedded HfC nanocrystallites surrounding the core. This work achieves the controllable preparation of nanoscale HfC sharpening tips for application as a point electron emission source and facilitates the application of HfC ultrafast laser-triggered tips in attosecond science. Highlights: •HfC microcrystal chains were synthesized by a catalyst-assisted CVD. •The chains grow along a [0 0 1] direction and have a periodically changing diameter. •Single-crystal HfC core is sheathed by a thin carbon-rich shell. •A growth mechanism model is proposed to explain the growth of microcrystal chians. •This work achieves the controllable preparation of nanoscale HfC sharpening tips. -- Abstract: Novel hafnium carbide (HfC) microcrystal chains, with a periodically changing diameter and a nanoscale sharpening tip at the chain end, have been synthesized via a catalyst-assisted chemical vapor deposition (CVD) process. The as-synthesized chains with many octahedral microcrystals have diameters of between several hundreds of nm and 6 μm and lengths of ∼500 μm. TEM diffraction studies show that the chains are single-crystalline HfC and preferentially grow along a [0 0 1] crystal orientation. TEM/EELS/EDX analysis proves the chains are composed of a HfC core and a thin (several tens of nm to 100 nm) carbon-rich shell with the embedded HfC nanocrystallites (typically below 10 nm) surrounding the core. The growth mechanism model for the chains based on the vapor–liquid–solid process, the vapor–solid process, and the HfC crystal growth characteristics is discussed

  8. Hafnium in peralkaline and peraluminous boro-aluminosilicate glass, and glass subcomponents: a solubility study

    International Nuclear Information System (INIS)

    Davis, Linda L.; Darab, John G.; Qian, Maoxu; Zhao, Donggao; Palenik, Christopher S.; Li, Hong; Strachan, Denis M.; Li, Liyu

    2003-01-01

    A relationship between the solubility of hafnia (HfO2) and the host glass composition was explored by determining the solubility limits of HfO2 in peralkaline and peraluminous borosilicate glasses in the system SiO2-Al2O3-B2O3-Na2O, and in glasses in the system SiO2-Na2O-Al2O3 in air at 1450 C. The only Hf-bearing phase to crystallize in the peralkaline borosilicate melts is hafnia, while in the boron-free melts sodium-hafnium silicates crystallize. All peraluminous borosilicate melts crystallize hafnia, but the slightly peraluminous glasses also have sector-zoned hafnia crystals that contain Al and Si. The more peraluminous borosilicate glasses also crystallize a B-containing mullite. The general morphology of the hafnia crystals changes as peralkalinity (Na2O/(Na2O+Al2O3)) decreases, as expected in melts with increasing viscosity. In all of the glasses with Na2O > Al2O3, the solubility of hafnia is linearly and positively correlated with Na2O/(Na2O + Al2O3) or Na2O - Al2O3 (excess sodium), despite the presence of 5 to 16 mol% B2O3. The solubility of hafnia is higher in the sodium-aluminum borosilicate glasses than in the sodium-aluminosilicate glasses, suggesting that the boron is enhancing the effect that excess sodium has on the incorporation of Hf into the glass structure. The results of this solubility study are compared to other studies of high-valence cation solubility in B-free silicate melts. From this, for peralkaline B-bearing glasses, it is shown that, although the solubility limits are higher, the solution behavior of hafnia is the same as in B-free silicate melts previously studied. By comparison, also, it is shown that in peraluminous melts, there must be a different solution mechanism for hafnia: different than for peralkaline sodium-aluminum borosilicate glasses and different than for B-free silicate melts studied by others

  9. Nano-crystals of cerium–hafnium binary oxide: Their size-dependent structure

    Energy Technology Data Exchange (ETDEWEB)

    Raitano, Joan M. [Department of Applied Physics and Applied Mathematics, Materials Science and Engineering Program, Columbia University, New York, NY 10027 (United States); Khalid, Syed [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY 11973 (United States); Marinkovic, Nebojsa [Chemical Engineering Department, Columbia University, 500 W 120th St, Mudd 801, New York, NY 10027 (United States); Chan, Siu-Wai, E-mail: sc174@columbia.edu [Department of Applied Physics and Applied Mathematics, Materials Science and Engineering Program, Columbia University, New York, NY 10027 (United States)

    2015-09-25

    Highlights: • (1 − x)CeO{sub 2}–xHfO{sub 2} was precipitated (0 < x < 1) and calcined in air. • For x ⩽ 0.14, crystallites ⩽140 nm in size exhibit only the fluorite structure. • This low hafnia solubility is attributable to no auto-reduction (Ce{sup 3+} = 0). • The low solubility is also due to the high temperature required for homogenization. • Coarsening is lessened as Hf{sup 4+} ions slow cation diffusion in these crystallites. - Abstract: Cerium oxide (CeO{sub 2}, “ceria”) and hafnium oxide (HfO{sub 2}, “hafnia”) were aqueously co-precipitated and subsequently calcined to allow for homogenization. The size of the (1−x)CeO{sub 2}–xHfO{sub 2} crystallites, determined by the Scherrer equation, varied from 140 nm for x = 0 to 15 nm for x = 0.73. For x ⩽ 0.14, only cubic structures are visible in X-ray diffractograms, and the lattice parameters are consistent with the values expected for structurally cubic solid solutions of hafnia in ceria. At x = 0.26, tetragonal and monoclinic phases nucleated with the former not being observed in the bulk phase diagram for ceria–hafnia. Therefore, the solubility limit of the cubic structure is between x = 0.14 and x = 0.26 for 40–61 nm crystallites, the sizes of these respective compositions. More specifically, for the 40 nm crystallites of x = 0.26 (1 − x)CeO{sub 2}–xHfO{sub 2}, 15% of the hafnia remains in a structurally cubic solid solution with ceria based on the observed cubic lattice parameter. The compositional domain for the cubic fluorite structure in this study is narrower than other nanostructured (1 − x)CeO{sub 2}–xHfO{sub 2} studies, especially studies with crystallite sizes less than 10 nm, but wider than observed in the bulk and helps to expand the size regime over which the relationship between crystallite size and phase stability is known. The extent of this cubic-structure domain is mainly attributable to the intermediate crystallite size and the roughly zero Ce{sup 3

  10. Nitriding behavior of Ni and Ni-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fonovic, Matej

    2015-01-15

    Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

  11. An assessment of the thermodynamic properties of uranium nitride, plutonium nitride and uranium-plutonium mixed nitride

    International Nuclear Information System (INIS)

    Matsui, T.; Ohse, R.W.

    1986-01-01

    Thermodynamic properties such as vapour pressures, heat capacities and enthalpies of formation for UN(s), PuN(s) and (U, Pu)N(s) are critically evaluated. The equations of the vapour pressures and the heat capacities for the three nitrides are assessed. Thermal functions, and thermodynamic functions for the formation of UN(s), PuN(s) and (U, Pu)N(s), are calculated

  12. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  13. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

    International Nuclear Information System (INIS)

    Anselin, F.

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

  14. Intragranular Chromium Nitride Precipitates in Duplex and Superduplex Stainless Steel

    OpenAIRE

    Iversen, Torunn Hjulstad

    2012-01-01

    Intragranular chromium nitrides is a phenomenon with detrimental effects on material properties in superduplex stainless steels which have not received much attention. Precipitation of nitrides occurs when the ferritic phase becomes supersaturated with nitrogen and there is insufficient time during cooling for diffusion of nitrogen into austenite. Heat treatment was carried out at between 1060◦C and 1160◦C to study the materials susceptibility to nitride precipitation with...

  15. Corrosion stability of cermets on the base of titanium nitride

    International Nuclear Information System (INIS)

    Kajdash, O.N.; Marinich, M.A.; Kuzenkova, M.A.; Manzheleev, I.V.

    1991-01-01

    Corrosion resistance of titanium nitride and its cermets in 5% of HCl, 7% of HNO 3 , 10% of H 2 SO 4 is studied. It is established that alloys TiN-Ni-Mo alloyed with chromium (from 10 to 15%) possess the highest corrosion resistance. Cermet TiN-Cr has the higher stability than titanium nitride due to formation of binary nitride (Ti, Cr)N

  16. A search for long-lived radionuclides produced by fast-neutron irradiations of copper, silver, europium, terbium, and hafnium

    International Nuclear Information System (INIS)

    Meadows, J.W.; Smith, D.L.; Ikeda, Y.; Konno, C.

    1990-01-01

    Identical sample packets, each containing samples of elemental copper, silver, europium, terbium, and hafnium, as well as titanium, iron and nickel as dosimeters, have been irradiated in three distinct accelerator neutron fields (at Argonne National Laboratory and Los Alamos National Laboratory in the U.S.A., and Japan Atomic Energy Research Institute, Tokai, Japan) as part of an interlaboratory research collaboration to search for the production of long-lived radionuclides for fusion waste disposal applications. This paper is a progress report on this project. To date, we have detected the following activities, and have obtained preliminary experimental cross section values for several of these: Ag-106m,108m,110m; Eu-150m,152g,154; Tb-158,160; and Hf-175,178m2,179m2,181. (author). 11 refs, 1 fig., 4 tabs

  17. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  18. About the structure and stability of complex carbonates of thorium (IV), cerium (IV), zirconium (IV), hafnium (IV)

    International Nuclear Information System (INIS)

    Dervin, Jacqueline

    1972-01-01

    This research thesis addressed the study of complex carbonates of cations of metals belonging to the IV A column, i.e. thorium (IV), zirconium (IV), hafnium (IV), and also cerium (IV) and uranium (VI), and more particularly focused on ionic compounds formed in solution, and also on the influence of concentration and nature of cations on stability and nature of the formed solid. The author first presents methods used in this study, discusses their precision and scope of validity. She reports the study of the formation of different complex ions which have been highlighted in solution, and the determination of their formation constants. She reports the preparation and study of the stability domain of solid complexes. The next part reports the use of thermogravimetric analysis, IR spectrometry, and crystallography for the structural study of these compounds

  19. Synthesis of Uranium nitride powders using metal uranium powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

    2012-01-01

    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

  20. Review of actinide nitride properties with focus on safety aspects

    Energy Technology Data Exchange (ETDEWEB)

    Albiol, Thierry [CEA Cadarache, St Paul Lez Durance Cedex (France); Arai, Yasuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2001-12-01

    This report provides a review of the potential advantages of using actinide nitrides as fuels and/or targets for nuclear waste transmutation. Then a summary of available properties of actinide nitrides is given. Results from irradiation experiments are reviewed and safety relevant aspects of nitride fuels are discussed, including design basis accidents (transients) and severe (core disruptive) accidents. Anyway, as rather few safety studies are currently available and as many basic physical data are still missing for some actinide nitrides, complementary studies are proposed. (author)

  1. Research and development of nitride fuel cycle technology in Japan

    International Nuclear Information System (INIS)

    Minato, Kazuo; Arai, Yasuo; Akabori, Mitsuo; Tamaki, Yoshihisa; Itoh, Kunihiro

    2004-01-01

    The research on the nitride fuel was started for an advanced fuel, (U, Pn)N, for fast reactors, and the research activities have been expanded to minor actinide bearing nitride fuels. The fuel fabrication, property measurements, irradiation tests and pyrochemical process experiments have been made. In 2002 a five-year-program named PROMINENT was started for the development of nitride fuel cycle technology within the framework of the Development of Innovative Nuclear Technologies by the Ministry of Education, Culture, Sports, Science and Technology of Japan. In the research program PROMINENT, property measurements, pyrochemical process and irradiation experiments needed for nitride fuel cycle technology are being made. (author)

  2. Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

    2015-03-15

    A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

  3. Modeling the Gas Nitriding Process of Low Alloy Steels

    Science.gov (United States)

    Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

    2013-07-01

    The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

  4. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  5. Boron nitride encapsulated graphene infrared emitters

    International Nuclear Information System (INIS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-01-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  6. Boron nitride encapsulated graphene infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

    2016-03-28

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  7. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  8. The interfacial orientation relationship of oxide nanoparticles in a hafnium-containing oxide dispersion-strengthened austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin, E-mail: miao2@illinois.edu [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Mo, Kun [Nuclear Engineering Division, Argonne National Laboratory, Lemont, IL 60493 (United States); Cui, Bai [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Chen, Wei-Ying [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Miller, Michael K.; Powers, Kathy A. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830 (United States); McCreary, Virginia; Gross, David [Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Almer, Jonathan [X-ray Science Division, Argonne National Laboratory, Lemont, IL 60493 (United States); Robertson, Ian M. [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, WA 53706 (United States); Department of Material Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Stubbins, James F. [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

    2015-03-15

    This work reports comprehensive investigations on the orientation relationship of the oxide nanoparticles in a hafnium-containing austenitic oxide dispersion-strengthened 316 stainless steel. The phases of the oxide nanoparticles were determined by a combination of scanning transmission electron microscopy–electron dispersive X-ray spectroscopy, atom probe tomography and synchrotron X-ray diffraction to be complex Y–Ti–Hf–O compounds with similar crystal structures, including bixbyite Y{sub 2}O{sub 3}, fluorite Y{sub 2}O{sub 3}–HfO{sub 2} solid solution and pyrochlore (or fluorite) Y{sub 2}(Ti,Hf){sub 2−x}O{sub 7−x}. High resolution transmission electron microscopy was used to characterize the particle–matrix interfaces. Two different coherency relationships along with one axis-parallel relation between the oxide nanoparticles and the steel matrix were found. The size of the nanoparticles significantly influences the orientation relationship. The results provide insight into the relationship of these nanoparticles with the matrix, which has implications for interpreting material properties as well as responses to radiation. - Highlights: • The oxide nanoparticles in a hafnium-containing austenitic ODS were characterized. • The nanoparticles are Y–Hf–Ti–O enriched phases according to APT and STEM–EDS. • Two coherency and an axis-parallel orientation relationships were found by HR-TEM. • Particle size has a prominent effect on the orientation relationship (OR). • Formation mechanism of the oxide nanoparticles was discussed based on the ORs.

  9. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  11. Nanopillar arrays of amorphous carbon nitride

    Science.gov (United States)

    Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

    2011-07-01

    Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

  12. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  13. Ion-nitriding of austenitic stainless steels

    International Nuclear Information System (INIS)

    Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

    1995-01-01

    Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

  14. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  15. RF plasma nitriding of severely deformed iron-based alloys

    International Nuclear Information System (INIS)

    Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

    2003-01-01

    The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

  16. Plasma nitriding - an eco friendly surface hardening process

    International Nuclear Information System (INIS)

    Mukherjee, S.

    2015-01-01

    Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

  17. 77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

    Science.gov (United States)

    2012-08-27

    ... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or recurrence of material injury to an industry in the United States within a reasonably foreseeable time. \\1...

  18. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  19. Process for producing ceramic nitrides anc carbonitrides and their precursors

    Science.gov (United States)

    Brown, G.M.; Maya, L.

    1987-02-25

    A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

  20. Implantation of titanium, chromium, yttrium, molybdenum, silver, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum ion source into 440C stainless steel

    International Nuclear Information System (INIS)

    Sasaki, Jun; Hayashi, Kazunori; Sugiyama, Kenji; Ichiko, Osami; Hashiguchi, Yoshihiro

    1992-01-01

    Titanium, yttrium, molybdenum, silver, chromium, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum arc (MEVVA) ion source were implanted into 440C stainless steel in the dose region 10 17 ions cm -2 with extraction voltages of up to 70 kV. Glow discharge spectroscopy (GDS), friction coefficient, and Vickers microhardness of the specimens were studied. Grooves made by friction tests were investigated by electron probe microanalysis (EPMA). GDS showed incorporation of carbon in the yttrium, hafnium, tantalum, tungsten and platinum implanted specimens, as well as titanium implanted samples. A large amount of oxygen was observed in the yttrium implanted specimen. The friction coefficient was measured by reciprocating sliding of an unimplanted 440C ball without lubricant at a load of 0.245 N. The friction decreased and achieved a stable state after implantation of titanium, hafnium and tantalum. The friction coefficient of the platinum implanted specimen showed a gradual decrease after several cycles of sliding at high friction coefficient. The yttrium implanted sample exhibited a decreased but slightly unstable friction coefficient. Results from EPMA showed that the implanted elements, which gave decreased friction, remained even after sliding of 200 cycles. Implantation of chromium, molybdenum, silver and tungsten did not provide a decrease in friction and the implants were gone from the wear grooves after the sliding tests. (orig.)

  1. Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

  2. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  3. Electrochemical behavior of rare earth metals and their nitrides

    International Nuclear Information System (INIS)

    Ito, Yasuhiko; Goto, Takuya

    2004-01-01

    Pyrometallurgical recycle process using molten salts is considered to be a high potential in pyro-reprocess technologies for spent nitride fuels, and it is important to understand chemical and electro-chemical behavior of nitrides and metals in molten salts. In this study, cadmium nitrates deposited on the anode Cd plate in motlen salt (LiCl-KCl) with addition of Li 3 N are examined. The cadmium nitrates deposited have various compositions corresponding to polarization potentials and then, the relationship between the deposition potential of nitride Cd and their composition is cleared. Their standard chemical potential of CdN is estimated from electrochemical measurement. And then, potential-pH 3- diagram is drawn by voltametry examination of nitride resolution behavior with using thermochemical data of nitrides. (A. Hishinuma)

  4. Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bo; Chen, Zhaohui; Lu, Gang [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Wang, Tianhu [School of Electrical Information and Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Ge, Yunwang, E-mail: ywgelit@126.com [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China)

    2016-04-15

    Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings can shed light on other transition metal nitride-based electrochemical energy storage systems.

  5. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  6. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    Science.gov (United States)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  7. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    International Nuclear Information System (INIS)

    Bouanis, F.Z.; Bentiss, F.; Bellayer, S.; Vogt, J.B.; Jama, C.

    2011-01-01

    Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe x N. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N 2 gas. Surface characterizations before and after N 2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV 0.005 at a plasma processing time of 8 h.

  8. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Bouanis, F.Z. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Bentiss, F. [Laboratoire de Chimie de Coordination et d' Analytique, Faculte des Sciences, Universite Chouaib Doukkali, B.P. 20, M-24000 El Jadida (Morocco); Bellayer, S.; Vogt, J.B. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Jama, C., E-mail: charafeddine.jama@ensc-lille.fr [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France)

    2011-05-16

    Highlights: {yields} C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. {yields} RF plasma treatment enables nitriding for non-heated substrates. {yields} The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. {yields} Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe{sub x}N. {yields} The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N{sub 2} gas. Surface characterizations before and after N{sub 2} plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 {mu}m for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV{sub 0.005} at a plasma processing time of 8 h.

  9. Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

    Science.gov (United States)

    Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

    2011-12-01

    Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

  10. Electrochemical capacitance performance of titanium nitride nanoarray

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

    2013-12-01

    Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

  11. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  12. Packing C60 in Boron Nitride Nanotubes

    Science.gov (United States)

    Mickelson, W.; Aloni, S.; Han, Wei-Qiang; Cumings, John; Zettl, A.

    2003-04-01

    We have created insulated C60 nanowire by packing C60 molecules into the interior of insulating boron nitride nanotubes (BNNTs). For small-diameter BNNTs, the wire consists of a linear chain of C60 molecules. With increasing BNNT inner diameter, unusual C60 stacking configurations are obtained (including helical, hollow core, and incommensurate) that are unknown for bulk or thin-film forms of C60. C60 in BNNTs thus presents a model system for studying the properties of dimensionally constrained ``silo'' crystal structures. For the linear-chain case, we have fused the C60 molecules to form a single-walled carbon nanotube inside the insulating BNNT.

  13. Doping of III-nitride materials

    OpenAIRE

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  14. Stability analysis of zigzag boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Hari Mohan, E-mail: rai.2208@gmail.com; Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R. [Indian Institute of Technology, Indore –452017 (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM- Indian Institute of Information Technology, Design and Manufacturing, Jabalpur – 482005 (India); Srivastava, Pankaj [Computational Nanoscience and Technology Lab. (CNTL), ABV- Indian Institute of Information Technology and Management, Gwalior – 474015 (India)

    2015-05-15

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  15. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  16. Hardness of carbides, nitrides, and borides

    International Nuclear Information System (INIS)

    Schroeter, W.

    1981-01-01

    Intermetallic compounds of metals with non-metals such as C, N, and B show different hardness. Wagner's interaction parameter characterizes manner and extent of the interaction between the atoms of the substance dissolved and the additional elements in metallic mixed phases. An attempt has been made to correlate the hardness of carbides, nitrides, and borides (data taken from literature) with certain interaction parameters and associated thermodynamic quantities (ΔH, ΔG). For some metals of periods 4, 5, and 6 corresponding relations were found between microhardness, interaction parameters, heat of formation, and atomic number

  17. The failure of aluminium nitride under shock

    International Nuclear Information System (INIS)

    Pickup, I.M.; Bourne, N.K.

    2002-01-01

    The shear strength of aluminium nitride has been measured over a range of impact stresses by measuring lateral stresses in plate impact experiments. The range of impact stress spanned several key shock thresholds for the material, pre and post Hugoniot elastic limit and up to values where the hexagonal to cubic phase transition starts. The shear strength measurements indicate significant inelastic damage at stress levels in excess of the HEL, but a significant recovery of strength at the highest impact stress was observed. This stress equates to the phase transition stress. The shear strength behaviour is compared to that of silicon carbide, which does not exhibit a phase change at these impact velocities

  18. Surface enrichment with chrome and nitriding of IF steel under an abnormal glow discharge

    International Nuclear Information System (INIS)

    Meira, S.R.; Borges, P.C.; Bernardelli, E.A.

    2014-01-01

    The objective of this work is to evaluate the influence of surface enrichment of IF steel with chrome, and nitriding, the formation of the nitrided layer. Thus, IF steel samples were subjected to surface enrichment process, using 409 stainless steel as a target for sputtering, followed by plasma nitriding, both under a dc abnormal glow discharge. The enrichment treatment was operated at 1200 ° C for 3h. The nitriding treatment was operated at 510 ° C for 2 h. The influence of the treatments on the layers formed was studied through optical microscopy (OM), scan electron microscopy (SEM), X-ray diffraction (XRD) and Vickers microindentation. The results show that the enrichment is effective to enrich the IF surface, furthermore, improves the characteristics of nitriding, comparing nitriding samples to nitriding and enriched, was observed needles of nitrides, as well as a higher hardness, which is associated with the nitrides of chrome, on the nitriding and enriched samples. (author)

  19. Microstructural characterization of pulsed plasma nitrided 316L stainless steel

    International Nuclear Information System (INIS)

    Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

    2011-01-01

    Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

  20. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Portolan, E. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Baumvol, I.J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91509-970 (Brazil); Figueroa, C.A., E-mail: cafiguer@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil)

    2009-04-15

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p{sub 3/2} photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN{sub x}). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  1. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    Energy Technology Data Exchange (ETDEWEB)

    Genel, K. [Sakarya Univ., Adapazari (Turkey). Mech. Eng. Dept.; Demirkol, M.; Guelmez, T. [Faculty of Mechanical Engineering, Istanbul Technical University, Guemuessuyu, 80191, Istanbul (Turkey)

    2000-08-31

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10{sup 7} cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  2. Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

    International Nuclear Information System (INIS)

    Genel, K.

    2000-01-01

    Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10 7 cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

  3. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Science.gov (United States)

    Portolan, E.; Baumvol, I. J. R.; Figueroa, C. A.

    2009-04-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  4. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    International Nuclear Information System (INIS)

    Portolan, E.; Baumvol, I.J.R.; Figueroa, C.A.

    2009-01-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x ). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  5. Characterization of plasma nitrided layers produced on sintered iron

    Directory of Open Access Journals (Sweden)

    Marcos Alves Fontes

    2014-07-01

    Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

  6. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

  7. Nanoscratch characterization of indium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

    2014-01-15

    In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

  8. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  9. Stable boron nitride diamondoids as nanoscale materials

    International Nuclear Information System (INIS)

    Fyta, Maria

    2014-01-01

    We predict the stability of diamondoids made up of boron and nitrogen instead of carbon atoms. The results are based on quantum-mechanical calculations within density functional theory (DFT) and show some very distinct features compared to the regular carbon-based diamondoids. These features are evaluated with respect to the energetics and electronic properties of the boron nitride diamondoids as compared to the respective properties of the carbon-based diamondoids. We find that BN-diamondoids are overall more stable than their respective C-diamondoid counterparts. The electronic band-gaps (E g ) of the former are overall lower than those for the latter nanostructures but do not show a very distinct trend with their size. Contrary to the lower C-diamondoids, the BN-diamondoids are semiconducting and show a depletion of charge on the nitrogen site. Their differences in the distribution of the molecular orbitals, compared to their carbon-based counterparts, offer additional bonding and functionalization possibilities. These tiny BN-based nanostructures could potentially be used as nanobuilding blocks complementing or substituting the C-diamondoids, based on the desired properties. An experimental realization of boron nitride diamondoids remains to show their feasibility. (paper)

  10. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Method of production of hollow silicon nitride articles

    International Nuclear Information System (INIS)

    Parr, N.L.; Brown, R.L.

    1971-01-01

    The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

  13. Critical fields of niobium nitride films of various granularity

    International Nuclear Information System (INIS)

    Antonova, E.A.; Sukhov, V.A.

    1983-01-01

    The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

  14. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  15. Mechanistic Studies of Hafnium-Pyridyl Amido-Catalyzed 1-Octene Polymerization and Chain Transfer Using Quench-Labeling Methods.

    Science.gov (United States)

    Cueny, Eric S; Johnson, Heather C; Anding, Bernie J; Landis, Clark R

    2017-08-30

    Chromophore quench-labeling applied to 1-octene polymerization as catalyzed by hafnium-pyridyl amido precursors enables quantification of the amount of active catalyst and observation of the molecular weight distribution (MWD) of Hf-bound polymers via UV-GPC analysis. Comparison of the UV-detected MWD with the MWD of the "bulk" (all polymers, from RI-GPC analysis) provides important mechanistic information. The time evolution of the dual-detection GPC data, concentration of active catalyst, and monomer consumption suggests optimal activation conditions for the Hf pre-catalyst in the presence of the activator [Ph 3 C][B(C 6 F 5 ) 4 ]. The chromophore quench-labeling agents do not react with the chain-transfer agent ZnEt 2 under the reaction conditions. Thus, Hf-bound polymeryls are selectively labeled in the presence of zinc-polymeryls. Quench-labeling studies in the presence of ZnEt 2 reveal that ZnEt 2 does not influence the rate of propagation at the Hf center, and chain transfer of Hf-bound polymers to ZnEt 2 is fast and quasi-irreversible. The quench-label techniques represent a means to study commercial polymerization catalysts that operate with high efficiency at low catalyst concentrations without the need for specialized equipment.

  16. An Auger electron spectroscopy study on the anodization process of high-quality thin-film capacitors made of hafnium

    International Nuclear Information System (INIS)

    Noya, Atsushi; Sasaki, Katsutaka; Umezawa, Toshiji

    1989-01-01

    Formation process of the anodic oxide film of hafnium for use as a thin-film capacitor has been examined by the current-voltage characteristics of the anodization and the in-depth analysis of formed oxide using Auger electron spectroscopy. It is found that the oxide growth obeys three different rate laws such as the linear rate law at first and next the parabolic rate law during the constant current anodization, and then the reciprocal logarithmic rate law during the constant voltage anodization following after the constant current process. From the Auger electron spectroscopy analysis, it is found that the shape of the compositional depth profile of the grown oxide film varies associating with the rate law of oxidation obeyed. The variation of depth profile correlating with the rate law is discussed with respect to each elementary process such as the transport and/or the reaction of chemical species interpreted from the over-all behavior of anodization process. It is revealed that the stoichiometric film having an interface with sharp transition, which is favorable for obtaining excellent electrical properties of the capacitor, can be obtained under the condition that the phase-boundary reaction is the rate-determining step of the anodization. The constant voltage anodization process also satisfies such circumstances and therefore can be favorable method for preparing highquality thin-film capacitors. (author)

  17. Evaluation and Enhancement of the Oxygen Reduction Reaction Activity on Hafnium Oxide Nanoparticles Assisted by L(+)-lysine

    International Nuclear Information System (INIS)

    Chisaka, Mitsuharu; Itagaki, Noriaki

    2016-01-01

    Evaluation of the oxygen reduction reaction (ORR) on oxide compounds is difficult owing to the insulating nature of oxides. In this study, various amounts of L(+)-lysine were added to the precursor dispersion for the hydrothermal synthesis of hafnium oxide nanoparticles on reduced graphene oxide sheets (HfO_x–rGO) to coat the HfO_x catalysts with layers of carbon, thereby increasing the conductivity and number of active sites. When the mass ratio of L(+)-lysine to GO, R, was above 26, carbon layers were formed and the amount monotonically increased with increasing R, as noted by cyclic voltammogrametry. X-ray photoelectron spectroscopy and rotating disk electrode analyses revealed that pyrolysis produced ORR-active oxygen defects, whose formation was proposed to involve carbothermal reduction. When 53 ≤ R ≤ 210, HfO_x–rGO contained a similar amount of oxygen defects and ORR activity, as represented by an onset potential of 0.9 V versus the reversible hydrogen electrode in 0.1 mol dm"−"3 H_2SO_4. However, the number of active sites depended on R due to the amount of L(+)-lysine-derived carbon layers that increased both the number of active sites and resistivity towards oxygen diffusion.

  18. IER-297 CED-2: Final Design for Thermal/Epithermal eXperiments with Jemima Plates with Polyethylene and Hafnium

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Percher, C. M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Zywiec, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Heinrichs, D. P. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2018-01-11

    This report presents the final design (CED-2) for IER-297, and focuses on 15 critical configurations using highly enriched uranium (HEU) Jemima plates moderated by polyethylene with and without hafnium diluent. The goal of the U.S. Nuclear Criticality Safety Program’s Thermal/Epithermal eXperiments (TEX) is to design and conduct new critical experiments to address high priority nuclear data needs from the nuclear criticality safety and nuclear data communities, with special emphasis on intermediate energy (0.625 eV – 100 keV) assemblies that can be easily modified to include various high priority diluent materials. The TEX (IER 184) CED-1 Report [1], completed in 2012, demonstrated the feasibility of meeting the TEX goals with two existing NCSP fissile assets, plutonium Zero Power Physics Reactor (ZPPR) plates and highly enriched uranium (HEU) Jemima plates. The first set of TEX experiments will focus on using the plutonium ZPPR plates with polyethylene moderator and tantalum diluents.

  19. Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

    International Nuclear Information System (INIS)

    Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

    2002-01-01

    In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

  20. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  1. Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, C.; Villarreal, M. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Caicedo, J.C., E-mail: jcaicedoangulo1@gmail.com [Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingeniería Mecatrónica, Universidad Militar Nueva Granada, Bogotá (Colombia); Caicedo, H.H. [Department of Bioengineering, University of Illinois at Chicago, IL 60612 (United States); Department of Anatomy and Cell Biology, University of Illinois at Chicago, IL 60612 (United States); Prieto, P. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Center of Excellence for Novel Materials, CENM, Cali (Colombia)

    2013-10-31

    HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN]{sub n} multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm{sup 2} and 0.094*10{sup −3} mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures.

  2. Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

    International Nuclear Information System (INIS)

    Escobar, C.; Villarreal, M.; Caicedo, J.C.; Aperador, W.; Caicedo, H.H.; Prieto, P.

    2013-01-01

    HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN] n multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm 2 and 0.094*10 −3 mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

  3. Interlayer shear of nanomaterials: Graphene-graphene, boron nitride-boron nitride and graphene-boron nitride

    Institute of Scientific and Technical Information of China (English)

    Yinfeng Li; Weiwei Zhang; Bill Guo; Dibakar Datta

    2017-01-01

    In this paper,the interlayer sliding between graphene and boron nitride (h-BN) is studied by molecular dynamics simulations.The interlayer shear force between h-BN/h-BN is found to be six times higher than that of graphene/graphene,while the interlayer shear between graphene/h-BN is approximate to that of graphene/graphene.The graphene/h-BN heterostructure shows several anomalous interlayer shear characteristics compared to its bilayer counterparts.For graphene/graphene and h-BN/h-BN,interlayer shears only exit along the sliding direction while interlayer shear for graphene/h-BN is observed along both the translocation and perpendicular directions.Our results provide significant insight into the interlayer shear characteristics of 2D nanomaterials.

  4. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  5. Fabrication of carbide and nitride pellets and the nitride irradiations Niloc 1 and Niloc 2

    International Nuclear Information System (INIS)

    Blank, H.

    1991-01-01

    Besides the relatively well-known advanced LMFBR mixed carbide fuel an advanced mixed nitride is also an attractive candidate for the optimised fuel cycle of the European Fast Reactor, but the present knowledge about the nitride is still insufficient and should be raised to the level of the carbide. For such an optimised fuel cycle the following general conditions have been set up for the fuel: (i) the burnup of the optimised MN and MC should be at least 15 a/o or even beyond, at moderate linear ratings of less than 75 kW/m (ii) the fuel will be used in a He-bonding pin concept and (iii) as far as available an advanced economic pellet fabrication method should be employed. (iv) The fuel structure must contain 15 - 20% porosity in order to accomodate the fission product swelling at high burnup. This report gives a comprehensive description of fuel and pellet fabrication and characterization, irradiation, and post-irradiation examination. From the results important conclusions can be drawn about future work on nitrides

  6. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    International Nuclear Information System (INIS)

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-01-01

    We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

  7. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Science.gov (United States)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  8. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    International Nuclear Information System (INIS)

    Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-01-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

  9. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    Science.gov (United States)

    Han, Jung; Kneissl, Michael

    2012-02-01

    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  10. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Energy Technology Data Exchange (ETDEWEB)

    Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  11. Comparative study involving the uranium determination through catalytic reduction of nitrates and nitrides by using decoupled plasma nitridation (DPN)

    International Nuclear Information System (INIS)

    Aguiar, Marco Antonio Souza; Gutz, Ivano G. Rolf

    1999-01-01

    This paper reports a comparative study on the determination of uranium through the catalytic reduction of nitrate and nitride using the decoupled plasma nitridation. The uranyl ions are a good catalyst for the reduction of NO - 3 and NO - 2 ions on the surface of a hanging drop mercury electrode (HDME). The presence of NO - in a solution with p H = 3 presented a catalytic signal more intense than the signal obtained with NO - 3 (concentration ten times higher). A detection limit of 1x10 9 M was obtained using the technique of decoupled plasma nitridation (DPN), suggesting the development of a sensitive way for the determination of uranium in different matrixes

  12. Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

    Directory of Open Access Journals (Sweden)

    Ibrahim Nor Nurulhuda Md.

    2014-07-01

    Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

  13. Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

    International Nuclear Information System (INIS)

    Nguyen, S.V.; Kerbaugh, M.

    1988-01-01

    This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

  14. Anomalous piezoelectricity in two-dimensional graphene nitride nanosheets.

    Science.gov (United States)

    Zelisko, Matthew; Hanlumyuang, Yuranan; Yang, Shubin; Liu, Yuanming; Lei, Chihou; Li, Jiangyu; Ajayan, Pulickel M; Sharma, Pradeep

    2014-06-27

    Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C3N4) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e11 piezoelectric coefficient of 0.758 C m(-2) is predicted for C3N4 superlattice, significantly larger than that of the commonly compared α-quartz.

  15. Continuum modelling for carbon and boron nitride nanostructures

    International Nuclear Information System (INIS)

    Thamwattana, Ngamta; Hill, James M

    2007-01-01

    Continuum based models are presented here for certain boron nitride and carbon nanostructures. In particular, certain fullerene interactions, C 60 -C 60 , B 36 N 36 -B 36 N 36 and C 60 -B 36 N 36 , and fullerene-nanotube oscillator interactions, C 60 -boron nitride nanotube, C 60 -carbon nanotube, B 36 N 36 -boron nitride nanotube and B 36 N 36 -carbon nanotube, are studied using the Lennard-Jones potential and the continuum approach, which assumes a uniform distribution of atoms on the surface of each molecule. Issues regarding the encapsulation of a fullerene into a nanotube are also addressed, including acceptance and suction energies of the fullerenes, preferred position of the fullerenes inside the nanotube and the gigahertz frequency oscillation of the inner molecule inside the outer nanotube. Our primary purpose here is to extend a number of established results for carbon to the boron nitride nanostructures

  16. Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

    Science.gov (United States)

    Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

    2018-02-07

    Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Defect complexes in carbon and boron nitride nanotubes

    CSIR Research Space (South Africa)

    Mashapa, MG

    2012-05-01

    Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

  18. Effect of gas pressure on active screen plasma nitriding response

    International Nuclear Information System (INIS)

    Nishimoto, Akio; Nagatsuka, Kimiaki; Narita, Ryota; Nii, Hiroaki; Akamatsu, Katsuya

    2010-01-01

    An austenitic stainless steel AISI 304 was active screen plasma nitrided using a 304 steel screen to investigate the effect of the gas pressure on the ASPN response. The sample was treated for 18 ks at 723 K in 25% N2 + 75% H2 gases. The gas pressure was changed to 100, 600 and 1200 Pa. The distance between screen and sample was also changed to 10, 30 and 50 mm. The nitrided samples were characterized by appearance observation, surface roughness, optical microscopy, X-ray diffraction, and microhardness testing. After nitriding, polygonal particles with a normal distribution were observed at the center and edges of all the ASPN-treated sample surfaces. Particles on the sample surfaces were finer with an increase in the gas pressure. The nitrided layer with a greater and homogeneous thickness was obtained at a low gas pressure of 100 Pa. (author)

  19. Optical properties of indium nitride films

    International Nuclear Information System (INIS)

    Tyagaj, V.A.; Evstigneev, A.M.; Krasiko, A.N.; Andreeva, A.F.; Malakhov, V.Ya.

    1977-01-01

    Reflection and transmission spectra of heavily doped indium nitride are studied at lambda=0.5-5 μm. Dispersion of the refractive index near the plasma resonance frequency, h.f. dielectric constant (epsilonsub(infinity)=9.3), and extinction coefficient near the transmission maximum of films have been determined from the analysis of interference pattern. The reflection spectrum exhibits maximum in the infrared range and optical effective mass is found through its position (msub(opt)*=0.11msub(0)). Free carrier absorption coefficient is shown to vary according to the law K approximately lambdasup(2.9+-0.1) which is characteristic of electron scattering by charged impurities. The analysis of absorption spectra near the threshold of interband transitions has lead to the conclusion that free carriers are localized in the lateral extremum of conduction band (or out of the center of the Brillouin zone), therefore the Burstein-Moss effect is absent

  20. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  1. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Chubarov, M.; Pedersen, H.; Högberg, H.; Filippov, S.; Engelbrecht, J.A.A.; O'Connel, J.; Henry, A.

    2014-01-01

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  2. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  3. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: d.fischer@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)

    2015-09-15

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  4. Hexagonal boron nitride and water interaction parameters

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanbin; Aluru, Narayana R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  5. Apatite formability of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Lahiri, Debrupa; Keshri, Anup K; Agarwal, Arvind; Singh, Virendra; Seal, Sudipta

    2011-01-01

    This study investigates the ability of boron nitride nanotubes (BNNTs) to induce apatite formation in a simulated body fluid environment for a period of 7, 14 and 28 days. BNNTs, when soaked in the simulated body fluid, are found to induce hydroxyapatite (HA) precipitation on their surface. The precipitation process has an initial incubation period of ∼ 4.6 days. The amount of HA precipitate increases gradually with the soaking time. High resolution TEM results indicated a hexagonal crystal structure of HA needles. No specific crystallographic orientation relationship is observed between BNNT and HA, which is due to the presence of a thin amorphous HA layer on the BNNT surface that disturbs a definite orientation relationship.

  6. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  7. Thermal expansion of quaternary nitride coatings

    Science.gov (United States)

    Tasnádi, Ferenc; Wang, Fei; Odén, Magnus; Abrikosov, Igor A.

    2018-04-01

    The thermal expansion coefficient of technologically relevant multicomponent cubic nitride alloys are predicted using the Debye model with ab initio elastic constants calculated at 0 K and an isotropic approximation for the Grüneisen parameter. Our method is benchmarked against measured thermal expansion of TiN and Ti(1-x)Al x N as well as against results of molecular dynamics simulations. We show that the thermal expansion coefficients of Ti(1-x-y)X y Al x N (X  =  Zr, Hf, Nb, V, Ta) solid solutions monotonously increase with the amount of alloying element X at all temperatures except for Zr and Hf, for which they instead decrease for y≳ 0.5 .

  8. A boron nitride nanotube peapod thermal rectifier

    International Nuclear Information System (INIS)

    Loh, G. C.; Baillargeat, D.

    2014-01-01

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  9. A boron nitride nanotube peapod thermal rectifier

    Energy Technology Data Exchange (ETDEWEB)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  10. Rebar graphene from functionalized boron nitride nanotubes.

    Science.gov (United States)

    Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

    2015-01-27

    The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

  11. CEMS of nitride coatings in agressive environments

    Science.gov (United States)

    Hanžel, D.; Agudelo, A. C.; Gancedo, J. R.; Lakatos-Varsanyi, M.; Marco, J. F.

    1998-12-01

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO2 atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Mössbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.

  12. CEMS of nitride coatings in agressive environments

    International Nuclear Information System (INIS)

    Hanzel, D.; Agudelo, A.C.; Gancedo, J.R.; Lakatos-Varsanyi, M.; Marco, J.F.

    1998-01-01

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO 2 atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Moessbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature

  13. CEMS of nitride coatings in agressive environments

    Energy Technology Data Exchange (ETDEWEB)

    Hanzel, D. [University of Ljubljana, J. Stefan Institute (Slovenia); Agudelo, A.C.; Gancedo, J.R. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain); Lakatos-Varsanyi, M. [Eoetvoes University, Department of Physical Chemistry (Hungary); Marco, J.F. [Instituto de Quimica-Fisica ' Rocasolano' , CSIC (Spain)

    1998-12-15

    The corrosion properties of single layered TiN and CrN films have been compared to bi-layered and multi-layered Ti/TiN films. XPS has showed that in humid SO{sub 2} atmosphere the best corrosion properties have been achieved by a multi-layered Ti/TiN coating. Cyclic voltammetry in acetate buffer has been applied to measure the porousity and corrosion resistance of coatings. The best results have been achieved by multi-layered Ti/TiN and CrN films. Conversion electron Moessbauer spectroscopy has been used to study the changes in the interface Fe/TiN during thermal treatment in UHV. It has been shown that the amount of iron nitrides in the interface increases with increasing temperature.

  14. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    Ferreira, T.H.; Sousa, E.M.B.

    2010-01-01

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  15. Low temperature gaseous nitriding of Ni based superalloys

    DEFF Research Database (Denmark)

    Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2010-01-01

    In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

  16. Preparation of phosphorus targets using the compound phosphorus nitride

    International Nuclear Information System (INIS)

    Maier-Komor, P.

    1987-01-01

    Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

  17. Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

    Science.gov (United States)

    2012-01-05

    Hutchinson, Adv. Appl . Mech. 29 (1992). [34] H. Ming-Yuan, J.W. Hutchinson, Int. J. Solids Struct. 25 (1989) 1053. [35] J. Salem , L. Ghosn, Int. J...Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride

  18. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

  19. Four-Wave Mixing in Silicon-Rich Nitride Waveguides

    DEFF Research Database (Denmark)

    Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

    2015-01-01

    We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

  20. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

    2017-09-26

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  1. Platinum group metal nitrides and carbides: synthesis, properties and simulation

    International Nuclear Information System (INIS)

    Ivanovskii, Alexander L

    2009-01-01

    Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

  2. Nitrogen Atom Transfer From High Valent Iron Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael D. [New Mexico State Univ., Las Cruces, NM (United States); Smith, Jeremy M. [Indiana Univ., Bloomington, IN (United States)

    2015-10-14

    This report describes the synthesis and reactions of high valent iron nitrides. Organonitrogen compounds such as aziridines are useful species for organic synthesis, but there are few efficient methods for their synthesis. Using iron nitrides to catalytically access these species may allow for their synthesis in an energy-and atom-efficient manner. We have developed a new ligand framework to achieve these goals as well as providing a method for inducing previously unknown reactivity.

  3. Theoretical study of nitride short period superlattices

    Science.gov (United States)

    Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

    2018-02-01

    Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

  4. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

    2011-01-01

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  5. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

    2016-09-15

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  6. Preparation and characteristics of various rare earth nitrides

    International Nuclear Information System (INIS)

    Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

    2008-01-01

    Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

  7. George de Hevesy (1885-1966). Discoverer of hafnium, founder of radioanalytical chemistry and X-ray fluorescence analysis and father of nuclear medicine

    International Nuclear Information System (INIS)

    Niese, Siegfried

    2017-01-01

    George de Hevesy known as discoverer of hafnium, founder of radioanalytical chemistry and X-ray fluorescence analysis and father of nuclear medicine has done important research work in inorganic, physical and radioanalytical and physiological chemistry as well as in geochemistry, radiation biology and medicine. When he must flee for political reasons from a country he must change his colleagues, his equipments, and the topic of his work. It is extremely surprising that he could receive important results under such circumstances even at an advanced age. (author)

  8. A spanish mineral of zirconium and hafnium. Separation of the two elements by liquid-liquid extraction, using tributyl phosphate as chelating agent

    International Nuclear Information System (INIS)

    Ruiz Sanchez, F.; Cruz Castillo, F. de la; Fernandez Cellini, R.

    1962-01-01

    The zirconium and Hafnium oxides are obtained from a Spanish mineral of zircon with an average contest of 55% in ZrO 2 -HfO 2 . An alkaline fusion to open the mineral, followed by a purification by crystallization as (Zr O-Hf O)Cl 2 H 2 O or as (Zr-Hf) (SO 4 ) 2 . 4H 2 O, is used. A discussion of the best experimental conditions for opening the mineral and of the purification method is made. (Author) 45 refs

  9. The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

    Science.gov (United States)

    Syarifah, Ratna Dewi; Suud, Zaki

    2015-09-01

    Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

  10. The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

    International Nuclear Information System (INIS)

    Syarifah, Ratna Dewi; Suud, Zaki

    2015-01-01

    Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better

  11. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  12. Toxicity evaluation of boron nitride nanospheres and water-soluble boron nitride in Caenorhabditis elegans

    Directory of Open Access Journals (Sweden)

    Wang N

    2017-08-01

    Full Text Available Ning Wang,1 Hui Wang,2 Chengchun Tang,3 Shijun Lei,1 Wanqing Shen,1 Cong Wang,1 Guobin Wang,4 Zheng Wang,1,4 Lin Wang1,5 1Research Center for Tissue Engineering and Regenerative Medicine, Union Hospital, 2Department of Medical Genetics, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, 3Boron Nitride Research Center, School of Materials Science and Engineering, Hebei University of Technology, Tianjin, 4Department of Gastrointestinal Surgery, 5Department of Clinical Laboratory, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, China Abstract: Boron nitride (BN nanomaterials have been increasingly explored for potential biological applications. However, their toxicity remains poorly understood. Using Caenorhabditis elegans as a whole-animal model for toxicity analysis of two representative types of BN nanomaterials – BN nanospheres (BNNSs and highly water-soluble BN nanomaterial (named BN-800-2 – we found that BNNSs overall toxicity was less than soluble BN-800-2 with irregular shapes. The concentration thresholds for BNNSs and BN-800-2 were 100 µg·mL-1 and 10 µg·mL-1, respectively. Above this concentration, both delayed growth, decreased life span, reduced progeny, retarded locomotion behavior, and changed the expression of phenotype-related genes to various extents. BNNSs and BN-800-2 increased oxidative stress levels in C. elegans by promoting reactive oxygen species production. Our results further showed that oxidative stress response and MAPK signaling-related genes, such as GAS1, SOD2, SOD3, MEK1, and PMK1, might be key factors for reactive oxygen species production and toxic responses to BNNSs and BN-800-2 exposure. Together, our results suggest that when concentrations are lower than 10 µg·mL-1, BNNSs are more biocompatible than BN-800-2 and are potentially biocompatible material. Keywords: boron nitride nanomaterials, Caenorhabditis elegans, nanotoxicology

  13. First principles calculations of interstitial and lamellar rhenium nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

  14. First principles calculations of interstitial and lamellar rhenium nitrides

    International Nuclear Information System (INIS)

    Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

    2012-01-01

    Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

  15. Structural properties of iron nitride on Cu(100): An ab-initio molecular dynamics study

    KAUST Repository

    Heryadi, Dodi; Schwingenschlö gl, Udo

    2011-01-01

    Due to their potential applications in magnetic storage devices, iron nitrides have been a subject of numerous experimental and theoretical investigations. Thin films of iron nitride have been successfully grown on different substrates. To study

  16. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-01-01

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes

  17. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  18. Nitride coating enhances endothelialization on biomedical NiTi shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Ion, Raluca [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Luculescu, Catalin [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor, P.O. Box MG-36, 077125 Magurele-Bucharest (Romania); Cimpean, Anisoara, E-mail: anisoara.cimpean@bio.unibuc.ro [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Marx, Philippe [AMF Company, Route de Quincy, 18120 Lury-sur-Arnon (France); Gordin, Doina-Margareta; Gloriant, Thierry [INSA Rennes, UMR CNRS 6226 ISCR, 20 Avenue des Buttes de Coësmes, 35708 Rennes Cedex 7 (France)

    2016-05-01

    Surface nitriding was demonstrated to be an effective process for improving the biocompatibility of implantable devices. In this study, we investigated the benefits of nitriding the NiTi shape memory alloy for vascular stent applications. Results from cell experiments indicated that, compared to untreated NiTi, a superficial gas nitriding treatment enhanced the adhesion of human umbilical vein endothelial cells (HUVECs), cell spreading and proliferation. This investigation provides data to demonstrate the possibility of improving the rate of endothelialization on NiTi by means of nitride coating. - Highlights: • Gas nitriding process of NiTi is competent to promote cell spreading. • Surface nitriding of NiTi is able to stimulate focal adhesion formation and cell proliferation. • Similar expression pattern of vWf and eNOS was exhibited by bare and nitrided NiTi. • Gas nitriding treatment of NiTi shows promise for better in vivo endothelialization.

  19. Analysis of mechanical properties of steel 1045 plasma nitriding: with and without tempering

    International Nuclear Information System (INIS)

    Machado, N.T.B.; Passos, M.L.M. dos; Riani, J.C.; Recco, A.A.C.

    2014-01-01

    The purpose of this study was to evaluate the possibility of tempering during the nitriding of AISI 1045 steel. The objective was to evaluate the possibility of eliminating this phase, with the nitriding properties remaining unaltered. For this, three parameter samples were compared: quenched, tempered and nitrided for 2h; quenching and nitrided for 2h and quenching and nitrided for 4h. The analysis techniques used for characterizing the samples before and after nitriding were optical microscopy, hardness Rockwell C (HRC), scanning electron microscopy (SEM), X-ray diffraction (XRD). Results showed that phase γ is the most favorable of all parameters tested. The hardness assays showed that samples with different initial hardness (with and without tempering) and even nitriding time showed similar mechanical properties. This fact suggests that the tempering process occurred parallel to the nitriding process. (author)

  20. Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

    International Nuclear Information System (INIS)

    Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

    2011-01-01

    Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 deg. C and 550 deg. C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N ) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

  1. Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

    2017-01-15

    Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

  2. A fast response hafnium selective polymeric membrane electrode based on N,N'-bis(α-methyl-salicylidene)-dipropylenetriamine as a neutral carrier

    International Nuclear Information System (INIS)

    Rezaei, B.; Meghdadi, S.; Zarandi, R. Fazel

    2008-01-01

    In this study a new hafnium selective sensor was fabricated from polyvinylchloride (PVC) matrix membrane containing neutral carrier N,N'-bis(α-methyl-salicylidene)-dipropylenetriamine (Mesaldpt) as a new ionophore, sodium tetraphenyl borate (NaTPB) as anionic discriminator and dioctyl phthalate (DOP) as plasticizing solvent mediator in tetrahydrofuran solvent. The electrode exhibits Nernstian response for Hf 4+ (Hafnium(IV)) over a wide concentration range (2.0 x 10 -7 to 1.0 x 10 -1 M) with the determination coefficient of 0.9966 and slope of 15.1 ± 0.1 mV decades -1 . The limit of detection is 1.9 x 10 -7 M. The electrode has a fast response time of 18 s and a working pH range of 4-8. The proposed membrane shows excellent discriminating ability towards Hf 4+ ion with regard to several alkali, alkaline earth transition and heavy metal ions. It can be used over a period of 1.5 months with good reproducibility. It is successfully applied for direct determination of Hf 4+ in solutions by standard addition method for real sample analysis

  3. A fast response hafnium selective polymeric membrane electrode based on N,N'-bis({alpha}-methyl-salicylidene)-dipropylenetriamine as a neutral carrier

    Energy Technology Data Exchange (ETDEWEB)

    Rezaei, B. [Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)], E-mail: rezaei@cc.iut.ac.ir; Meghdadi, S.; Zarandi, R. Fazel [Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

    2008-08-30

    In this study a new hafnium selective sensor was fabricated from polyvinylchloride (PVC) matrix membrane containing neutral carrier N,N'-bis({alpha}-methyl-salicylidene)-dipropylenetriamine (Mesaldpt) as a new ionophore, sodium tetraphenyl borate (NaTPB) as anionic discriminator and dioctyl phthalate (DOP) as plasticizing solvent mediator in tetrahydrofuran solvent. The electrode exhibits Nernstian response for Hf{sup 4+} (Hafnium(IV)) over a wide concentration range (2.0 x 10{sup -7} to 1.0 x 10{sup -1} M) with the determination coefficient of 0.9966 and slope of 15.1 {+-} 0.1 mV decades{sup -1}. The limit of detection is 1.9 x 10{sup -7} M. The electrode has a fast response time of 18 s and a working pH range of 4-8. The proposed membrane shows excellent discriminating ability towards Hf{sup 4+} ion with regard to several alkali, alkaline earth transition and heavy metal ions. It can be used over a period of 1.5 months with good reproducibility. It is successfully applied for direct determination of Hf{sup 4+} in solutions by standard addition method for real sample analysis.

  4. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

    2005-07-15

    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  5. Performance analysis of nitride alternative plasmonic materials for localized surface plasmon applications

    DEFF Research Database (Denmark)

    Guler, U.; Naik, G. V.; Boltasseva, Alexandra

    2012-01-01

    . Titanium nitride and zirconium nitride, which were recently suggested as alternative plasmonic materials in the visible and near-infrared ranges, are compared to the performance of gold. In contrast to the results from quasistatic methods, both nitride materials are very good alternatives to the usual...

  6. UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

    2015-01-25

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

  7. UN2−x layer formed on uranium metal by glow plasma nitriding

    International Nuclear Information System (INIS)

    Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

    2015-01-01

    Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

  8. Turbostratic boron nitride coated on high-surface area metal oxide templates

    DEFF Research Database (Denmark)

    Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

    2007-01-01

    Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

  9. Cavitation contributes substantially to tensile creep in silicon nitride

    International Nuclear Information System (INIS)

    Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

    1995-01-01

    During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress (var-epsilon ∝ σ n , 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride

  10. Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

    Directory of Open Access Journals (Sweden)

    Mahmoud Hassan R. S.

    2014-07-01

    Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

  11. X-ray tube target

    International Nuclear Information System (INIS)

    Weber, R.G.

    1980-01-01

    A target with an improved heat emissive surface for use in a rotating anode type x-ray tube is described. The target consists of a body having a first surface portion made of x-ray emissive material and a second surface portion made of a heat emissive material comprising at least one of hafnium boride, hafnium oxide, hafnium nitride, hafnium silicide, and hafnium aluminide. (U.K.)

  12. Gallium nitride at the millennial transition

    International Nuclear Information System (INIS)

    Pankovo, J.I.

    2000-01-01

    The properties of gallium nitride were uncovered in the early years of exploratory research and endowed with negative electron affinity that could be used to make efficient cold cathodes and even dynodes for electron multipliers. GaN has another property i.e. polar nature of the crystal which makes this material piezo-electric and has non-linear optical properties. The piezo-electric properties led to new piezo electric effect may cause interfacial charge. The non-uniform distribution of acceptors, there is also presence of threading and other dislocation in GaN. Defects reappear where two adjacent overgrowth merge, but the good lateral overgrow region is large enough to make lasers. Injection lasers benefit from strong electrical and optical environment. This was achieved by using quantum wells of InGaN in GaN and this can be doped with rare earth elements to exploit the atomic transition between core levels in these elements. The emission efficiency of electrically excited Er in GaN is nearly temperature incentive from 80K to room temperature. An other application of GaN is as a heterojunction emitter for a bi-polar transistor (HBT) that can operate at high temperatures. (A.B.)

  13. Refined phase diagram of boron nitride

    International Nuclear Information System (INIS)

    Solozhenko, V.; Turkevich, V.Z.

    1999-01-01

    The equilibrium phase diagram of boron nitride thermodynamically calculated by Solozhenko in 1988 has been now refined on the basis of new experimental data on BN melting and extrapolation of heat capacities of BN polymorphs into high-temperature region using the adapted pseudo-Debye model. As compared with the above diagram, the hBN left-reversible cBN equilibrium line is displaced by 60 K toward higher temperatures. The hBN-cBN-L triple point has been calculated to be at 3480 ± 10 K and 5.9 ± 0.1 GPa, while the hBN-L-V triple point is at T = 3400 ± 20 K and p = 400 ± 20 Pa, which indicates that the region of thermodynamic stability of vapor in the BN phase diagram is extremely small. It has been found that the slope of the cBN melting curve is positive whereas the slope of hBN melting curve varies from positive between ambient pressure and 3.4 GPa to negative at higher pressures

  14. Scratch-resistant transparent boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Dekempeneer, E.H.A.; Kuypers, S.; Vercammen, K.; Meneve, J.; Smeets, J. [Vlaamse Instelling voor Technologisch Onderzoek (VITO), Mol (Belgium); Gibson, P.N.; Gissler, W. [Joint Research Centre of the Commission of the European Communities, Institute for Advanced Materials, Ispra (Vatican City State, Holy See) (Italy)

    1998-03-01

    Transparent boron nitride (BN) coatings were deposited on glass and Si substrates in a conventional capacitively coupled RF PACVD system starting from diborane (diluted in helium) and nitrogen. By varying the plasma conditions (bias voltage, ion current density), coatings were prepared with hardness values ranging from 2 to 12 GPa (measured with a nano-indenter). Infrared absorption measurements indicated that the BN was of the hexagonal type. A combination of glancing-angle X-ray diffraction measurements and simulations shows that the coatings consist of hexagonal-type BN crystallites with different degrees of disorder (nanocrystalline or turbostratic material). High-resolution transmission electron microscopy analysis revealed the presence of an amorphous interface layer and on top of this interface layer a well-developed fringe pattern characteristic for the basal planes in h-BN. Depending on the plasma process conditions, these fringe patterns showed different degrees of disorder as well as different orientational relationships with respect to the substrate surface. These observations were correlated with the mechanical properties of the films. (orig.) 14 refs.

  15. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  16. Fluorescent lighting with aluminum nitride phosphors

    Science.gov (United States)

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

    2016-05-10

    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  17. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  18. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  19. Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

    International Nuclear Information System (INIS)

    Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D.

    2001-01-01

    In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. [copyright] 2001 American Institute of Physics

  20. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    International Nuclear Information System (INIS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-01-01

    Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications

  1. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Czarnowska, Elżbieta [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Borowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Sowińska, Agnieszka [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Lelątko, Józef [Silesia University, Faculty of Computer Science and Materials Science, 75 Pułku Piechoty 1A, 41-500 Chorzów (Poland); Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Wierzchoń, Tadeusz, E-mail: twierz@inmat.pw.edu.pl [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland)

    2015-04-15

    Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  2. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    Energy Technology Data Exchange (ETDEWEB)

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  3. Research and development of nitride fuel cycle technology in Europe

    International Nuclear Information System (INIS)

    Wallenius, Janne

    2004-01-01

    Research and development on nitride fuels for minor actinide burning in accelerator driven systems is performed in Europe in context of the CONFIRM project. Dry and wet methods for fabrication of uranium free nitride fuels have been developed with the assistance of thermo-chemical modelling. Four (Pu, Zr) pins have been fabricated by PSI and will be irradiated in Studsvik at a rating of 40-50 kW/m. The thermal conductivity of (Pu, Zr)N has been measured and was found to be in agreement with earlier theoretical assessments. Safety modeling indicates that americium bearing nitride fuels, in spite of their relatively poor high temperature stability under atmospheric pressure, can survive power transients as long as the fuel cladding remains intact. (author)

  4. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  5. Semipolar III-nitride laser diodes with zinc oxide cladding.

    Science.gov (United States)

    Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

    2017-07-24

    Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

  6. Electronic Biosensors Based on III-Nitride Semiconductors.

    Science.gov (United States)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  7. Origin of interfacial charging in irradiated silicon nitride capacitors

    International Nuclear Information System (INIS)

    Hughes, R.C.

    1984-01-01

    Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO 2 -Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution

  8. Tribological and microstructural characteristics of ion-nitrided steels

    Science.gov (United States)

    Spalvins, T.

    1983-01-01

    Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

  9. performance calculations of gadolinium oxide and boron nitride coated fuel

    International Nuclear Information System (INIS)

    Tanker, E.; Uslu, I.; Disbudak, H.; Guenduez, G.

    1997-01-01

    A comparative study was performed on the behaviour of natural uranium dioxide-gadolinium oxide mixture fuel and boron nitride coated low enriched fuel in a pressurized water reactor. A fuel element containing one burnable poison fuel pins was modeled with the computer code WIMS, and burn-up dependent critically, fissile isotope inventory and two dimensional power distribution were obtained. Calculations were performed for burnable poison fuels containing 5% and 10% gadolinium oxide and for those coated with 1μ,5μ and 10μ of boron nitride. Boron nitride coating was found superior to gadolinium oxide on account of its smoother criticality curve, lower power peaks and insignificant change in fissile isotope content

  10. Kinetic modelling of chlorination of nitrided ilmenite using MATLAB

    Energy Technology Data Exchange (ETDEWEB)

    Ramakrishnan, Sivakumar, E-mail: srsivakumar@usm.my; Kwok, Teong Chen, E-mail: ctck@live.com; Hamid, Sheikh Abdul Rezan Sheikh Abdul, E-mail: rezanshk@gmail.com [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300, Nibong Tebal, Penang (Malaysia)

    2016-07-19

    In the present study, chlorination of nitride ilmenite using 2{sup k} factorial design was investigated. The reduction experiments were carried out in a temperature range of 400°C to 500°C, chlorination duration from 1 hour to 3 hours and using different type of carbon reactant. Phases of raw materials and reduced samples were analyzed by X-ray diffraction (XRD). Ilmenite was reduced to TiO{sub x}C{sub y}N{sub z} through carbothermal and nitridation for further chlorination into titanium tetrachloride. The Design of Experiment analysis suggested that the types of carbon reactant contribute most influence to the extent of chlorination of nitride ilmenite. The extent of chlorination was highest at 500°C with 3 hours chlorination time and carbon nanotube as carbon reactant.

  11. Hot carrier dynamics in plasmonic transition metal nitrides

    Science.gov (United States)

    Habib, Adela; Florio, Fred; Sundararaman, Ravishankar

    2018-06-01

    Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nano-structures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron–electron and electron–phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3–4 smaller than noble metals, due to strong electron–phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction.

  12. Production of 15N for nitride type nuclear fuel

    International Nuclear Information System (INIS)

    Axente, Damian

    2005-01-01

    Full text: Nitride nuclear fuel is the choice for advanced nuclear reactors and ADS, considering its favorable properties as: melting point, excellent thermal conductivity, high fissile density, lower fission gas release and good radiation tolerance. The application of nitride fuels in different nuclear reactors requires use of 15 N enriched nitrogen to suppress 14 C production due to (n,p) reaction on 14 N. Nitride fuel is a promising candidate for transmutation in ADSs of radioactive minor actinides, which are converted into nitrides with 15 N for that purpose. Taking into account that at present the world wide 15 N market is about 20 - 40 Kg 15 N/y, the supply of that isotope for nitride type nuclear fuel, would demand an increase in production capacity by a factor of 1000. For an industrial plant producing 100 t/y 15 N at 99 at. % 15 N concentration, using present technology of 15 N/ 14 N isotopic exchange in Nitrox system, the first separation stage of the cascade would be fed with 10M HNO 3 solution at a 600 m 3 /h flow-rate. If conversion of HNO 3 into NO, NO 2 , at the enriching end of the columns, would be done with gaseous SO 2 , for an industrial plant of 100 t/y 15 N a consumption of 4 million t SO 2 /y and a production of 70 % H 2 SO 4 waste solution of 4.5 million m 3 /y are estimated. The reconversion of H 2 SO 4 into SO 2 in order to recycle SO 2 is a problem to be solved to compensate the cost of sulfur dioxide and to diminish the amount of sulfuric acid waste solution. It should be taken into consideration an important price reduction of 15 N in order to make possible its utilization for industrial production of nitride type nuclear fuel. (authors)

  13. Dissolution performance of plutonium nitride based fuel materials

    Energy Technology Data Exchange (ETDEWEB)

    Aneheim, E.; Hedberg, M. [Nuclear Chemistry, Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivaegen 4, Gothenburg, SE41296 (Sweden)

    2016-07-01

    Nitride fuels have been regarded as one viable fuel option for Generation IV reactors due to their positive features compared to oxides. To be able to close the fuel cycle and follow the Generation IV concept, nitrides must, however, demonstrate their ability to be reprocessed. This means that the dissolution performance of actinide based nitrides has to be thoroughly investigated and assessed. As the zirconium stabilized nitrides show even better potential as fuel material than does the pure actinide containing nitrides, investigations on the dissolution behavior of both PuN and (Pu,Zr)N has been undertaken. If possible it is desirable to perform the fuel dissolutions using nitric acid. This, as most reprocessing strategies using solvent-solvent extraction are based on a nitride containing aqueous matrix. (Pu,Zr)N/C microspheres were produced using internal gelation. The spheres dissolution performance was investigated using nitric acid with and without additions of HF and Ag(II). In addition PuN fuel pellets were produced from powder and their dissolution performance were also assessed in a nitric acid based setting. It appears that both PuN and (Pu,Zr)N/C fuel material can be completely dissolved in nitric acid of high concentration with the use of catalytic amounts of HF. The amount of HF added strongly affects dissolution kinetics of (Pu, Zr)N and the presence of HF affects the 2 solutes differently, possibly due to inhomogeneity o the initial material. Large additions of Ag(II) can also be used to facilitate the dissolution of (Pu,Zr)N in nitric acid. PuN can be dissolved by pure nitric acid of high concentration at room temperature while (Pu, Zr)N is unaffected under similar conditions. At elevated temperature (reflux), (Pu,Zr)N can, however, also be dissolved by concentrated pure nitric acid.

  14. Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

    International Nuclear Information System (INIS)

    Wang Wei; Xue Tao; Jin Zhihao; Qiao Guanjun

    2008-01-01

    Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

  15. Silicon nitride photonics: from visible to mid-infrared wavelengths

    Science.gov (United States)

    Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

    2018-02-01

    Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

  16. Synthesis, reactivity, and electronic structure of molecular uranium nitrides

    OpenAIRE

    Cleaves, Peter A.

    2016-01-01

    The study of metal-ligand multiple bonding offers insight into the electronic structure and bond of metal systems. Until recently, for uranium, such systems were limited to uranyl, and terminal chalcogenide, imide and carbene complexes. In 2012, this was extended to nitrides with the first preparation of a uranium–nitride (U≡N) species isolable under standard conditions, namely [U(TrenTIPS)(N)][Na(12C4)2] (52), which is prepared by the two-electron reduction of sodium azide with a trivalent u...

  17. Inter-layer potential for hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Leven, Itai; Hod, Oded, E-mail: odedhod@tau.ac.il [Department of Chemical Physics, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University, Tel-Aviv 69978 (Israel); Azuri, Ido; Kronik, Leeor [Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100 (Israel)

    2014-03-14

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  18. Structural, electronic and optical properties of carbon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M L [California Univ., Berkeley (United States). Dept. of Physics

    1996-05-01

    Carbon nitride was proposed as a superhard material and a structural prototype, {beta}-C{sub 3}N{sub 4}, was examined using several theoretical models. Some reports claiming experimental verifications have been made recently. The current status of the theory and experiment is reviewed, and a detailed discussion is presented of calculations of the electronic and optical properties of this material. These calculations predict that {beta}-C{sub 3}N{sub 4} will have a minimum gap which is indirect at 6.4{+-}0.5 eV. A discussion of the possibility of carbon nitride nanotubes is also presented. (orig.)

  19. Proceedings of the symposium on nitride fuel cycle technology

    International Nuclear Information System (INIS)

    2004-12-01

    This report is the Proceedings of the Symposium of Nitride Fuel Cycle Technology, which was held on July 28, 2004, at the Tokai Research Establishment of the Japan Atomic Energy Research Institute. The purpose of this symposium is to exchange information and views on nitride fuel cycle technology among researchers from foreign and domestic organizations, and to discuss the recent and future research activities. The topics in the symposium are Present State of the Technology Development in the World and Japan, Fabrication Technology, Property Measurement and Pyrochemical Process. The intensive discussion was made among 53 participants. This report consists of 2 papers as invited presentations and 12 papers as contributed papers. (author)

  20. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Guler Urcan

    2015-01-01

    Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

  1. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    International Nuclear Information System (INIS)

    Butt, Drryl P.; Jaques, Brian

    2009-01-01

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (U x , Dy 1-x )N (0.7 (le) X (le) 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  2. Nitriding and Nitrocarburizing; Current Status and Future Challenges

    DEFF Research Database (Denmark)

    Somers, Marcel A. J.

    , aspects of low temperature surface hardening of stainless steels in a gaseous environment will be addressed. Here, the developed case consists of expanded austenite and/or expanded martensite, which essentially is a super saturated solid solution of nitrogen/carbon in austenite/martensite. The current......This contribution addresses the current understanding of gaseous nitriding and nitrocarburizing. Aspects of thermodynamics, kinetics and microstructure development in iron and heat treatable steel will be explained. In these materials the nitrided/ nitrocarburized case can be subdivided...

  3. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  4. Peculiar features in formation of diffusion layer properties during nitridation

    International Nuclear Information System (INIS)

    Gulyaev, A.P.; Konoval'tsev, V.I.; Nikitin, V.V.

    1983-01-01

    Peculiarities of the formation of multiphase nitridated layer at samples of commercial iron, 20, 40Kh and 38KhMYu6A steels are studied with the help of high-temperature methods of investigation (X-ray diffraction analysis, hardening and thickness measuring). It is found out that during the saturation the solid solution oversaturated with nitrogen is formed; some increase in hardness in the process is a result of solid solution hardening and the increase of thickness of nitride zone; however the main growth of the layer hardness is achieved during the cooling as a result of α phase precipitating hardening

  5. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  6. Inter-layer potential for hexagonal boron nitride

    International Nuclear Information System (INIS)

    Leven, Itai; Hod, Oded; Azuri, Ido; Kronik, Leeor

    2014-01-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures

  7. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Drryl P. Butt; Brian Jaques

    2009-03-31

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ≤ X ≤ 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  8. Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

    Science.gov (United States)

    Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

    2011-08-01

    In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

  9. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  10. Graphitic carbon nitride based nanocomposites: a review

    Science.gov (United States)

    Zhao, Zaiwang; Sun, Yanjuan; Dong, Fan

    2014-11-01

    Graphitic carbon nitride (g-C3N4), as an intriguing earth-abundant visible light photocatalyst, possesses a unique two-dimensional structure, excellent chemical stability and tunable electronic structure. Pure g-C3N4 suffers from rapid recombination of photo-generated electron-hole pairs resulting in low photocatalytic activity. Because of the unique electronic structure, the g-C3N4 could act as an eminent candidate for coupling with various functional materials to enhance the performance. According to the discrepancies in the photocatalytic mechanism and process, six primary systems of g-C3N4-based nanocomposites can be classified and summarized: namely, the g-C3N4 based metal-free heterojunction, the g-C3N4/single metal oxide (metal sulfide) heterojunction, g-C3N4/composite oxide, the g-C3N4/halide heterojunction, g-C3N4/noble metal heterostructures, and the g-C3N4 based complex system. Apart from the depiction of the fabrication methods, heterojunction structure and multifunctional application of the g-C3N4-based nanocomposites, we emphasize and elaborate on the underlying mechanisms in the photocatalytic activity enhancement of g-C3N4-based nanocomposites. The unique functions of the p-n junction (semiconductor/semiconductor heterostructures), the Schottky junction (metal/semiconductor heterostructures), the surface plasmon resonance (SPR) effect, photosensitization, superconductivity, etc. are utilized in the photocatalytic processes. Furthermore, the enhanced performance of g-C3N4-based nanocomposites has been widely employed in environmental and energetic applications such as photocatalytic degradation of pollutants, photocatalytic hydrogen generation, carbon dioxide reduction, disinfection, and supercapacitors. This critical review ends with a summary and some perspectives on the challenges and new directions in exploring g-C3N4-based advanced nanomaterials.

  11. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  12. Development of nitride fuel and pyrochemical process for transmutation of minor actinides

    International Nuclear Information System (INIS)

    Arai, Yasuo; Akabori, Mitsuo; Minato, Kazuo; Uno, Masayoshi

    2010-01-01

    Nitride fuel cycle for transmutation of minor actinides has been investigated under the double-strata fuel cycle concept. Mononitride solid solutions containing minor actinides have been prepared and characterised. Thermo-physical properties, such as thermal expansion, heat capacity and thermal diffusivity, have been measured by use of minor actinide nitride and burn-up simulated nitride samples. Irradiation behaviour of nitride fuel has been examined by irradiation tests. Pyrochemical process for treatment of spent nitride fuel has been investigated mainly by electrochemical measurements and nitride formation behaviour in pyrochemical process has been studied for recycled fuel fabrication. Recent results of experimental study on nitride fuel and pyrochemical process are summarised in the paper. (authors)

  13. 3D-atom probe analysis of Cr and Cu added nitriding steels

    International Nuclear Information System (INIS)

    Takahashi, J.; Kawakami, K.; Sugiyama, M.; Kawasaki, K.

    2004-01-01

    Full text: Nitriding treatment is a very effective method for hardening the surface of steels and realizing improvement in wear-resistance. Although this technology has been performed for many years, the precipitation and hardening mechanisms are not completely clear. It was not easy to observe very fine precipitates which may be generated in nitriding steels. We performed a three-dimensional atom probe analysis of the nitriding steel plate in which two kinds of precipitates were generated. Hot-rolled steel plates, which mainly contained Cr 1.0wt.% and Cu 1.3wt.%, were nitrided by annealing (550-6000 o ) in a mainly NH 3 atmosphere. The material before the nitriding had a hardness of about 100 Hv. By the nitriding, the surface hardness increased to more than 700 Hv, and the inside hardness also increased to 200 Hv. The specimens were taken from 0.15 mm, 0.3 mm and 0.8 mm depth from the surface, which mostly correspond to the peak, the half and the inside hardness, respectively. In the specimen of 0.8 mm depth, prolate spheroidal Cu precipitates of more than 8 nm in diameter were observed. In the specimen of 0.3 mm depth, plate-shape nitride precipitates of 6-10 nm in diameter were observed in addition to the Cu precipitates. Each Cu precipitate made a pair with the nitride precipitate. In the 0.15 mm depth specimen, Cr nitride precipitates of high volume density in addition to the pairs consisting of a Cu precipitate and a Cr nitride precipitate were observed. The size of the nitride precipitate forming the pair was slightly larger than that of the single Cr nitride precipitates. Furthermore, the denuded zone where the nitride precipitate does not exist was observed around the pairs. From these results, it was concluded that three stages of precipitation arose as follows: By the heat treatment of nitriding processing, Cu precipitates were generated first. Then, Cr nitride nucleated at the surface of the Cu precipitates inhomogeneously, and surrounding solute Cr was

  14. Heterostructures for Increased Quantum Efficiency in Nitride LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

    2010-09-30

    Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

  15. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  16. Dynamic response of multiwall boron nitride nanotubes subjected to ...

    Indian Academy of Sciences (India)

    Page 1 ... 1. Introduction. Boron nitride nanotubes (BNNTs) are like carbon nanotubes. (CNTs) in structure in which carbon atoms are replaced by alternate boron and nitrogen atoms. Thus, BNNTs demon- ... istic analyser for intermediate landing situation of inserted mass.15 Also, a macroscopic continuum simulation is sug-.

  17. Damage initiation and evolution in silicon nitride under\

    Czech Academy of Sciences Publication Activity Database

    Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

    360-361, AUG (2016), s. 147-159 ISSN 0043-1648 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Rollingcontactfatigue * Subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.531, year: 2016

  18. Estimation of tribological anticorrosion properties of impregnated nitriding layers

    International Nuclear Information System (INIS)

    Iwanow, J.; Senatorski, J.; Tacikowski, J.

    1999-01-01

    In this paper is described aim, experimental and test result of tribological anticorrosion properties of thin nitriding layer (12.5 μm) obtained on 45 steel grade in controlled gas-nitriding process (570 o C, 4 h) impregnated with oil-based formulations, containing corrosion inhibitor BS-43, modified with tribological additives based on ashen organometallic compounds as well as ash-free organic compounds. It was stated, that tribological additives does not influence, in fact, on behaviour of corrosion resistance of nitriding layers impregnated with oil-base formulations mainly connected with inhibitor BS-43. Synergy of tribological additive and corrosion inhibitor is however more visible in modelling of wear resistance of nitriding layer. The influence nature of tribological additives in combination with corrosion inhibitor BS-43 is dependent on their kind and as result improves or worsens the wear resistance by friction. Hence in choice of impregnated formulation, which is enable to accomplish of tribological anticorrosion requirements, determined, above all, tribological additive. (author)

  19. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  20. Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

    Science.gov (United States)

    Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

    2017-12-01

    A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

  1. Microstructure characterization of fluidized bed nitrided Fe–Si and ...

    Indian Academy of Sciences (India)

    Unknown

    The investi- gations on the nitrided samples were carried out by optical and SEM microscopic observations, X-ray ... Many studies have been carried out in the past to improve ... Experimental. The Fe .... The same is true for the FeSiAl sample.

  2. Second-harmonic generation in substoichiometric silicon nitride layers

    Science.gov (United States)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  3. Electron microprobe analysis of tantalum--nitride thin films

    International Nuclear Information System (INIS)

    Stoltz, D.L.; Starkey, J.P.

    1979-06-01

    Quantitative chemical analysis of 500- and 2000-angstrom tantalum--nitride films on glass substrates has been accomplished using an electron microprobe x-ray analyzer. In order to achieve this analysis, modifications to the microprobe were necessary. A description of the calibration procedure, the method of analysis, and the quantitative results are discussed

  4. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  5. Microstructural evolution during nitriding, finite element simulation and experimental assessment

    Energy Technology Data Exchange (ETDEWEB)

    Hassani-Gangaraj, S.M. [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy); Guagliano, M., E-mail: mario.guagliano@polimi.it [Politecnico di Milano, Dipartimento di Meccanica, Via La Masa, 1, 20156 Milano (Italy)

    2013-04-15

    A finite element simulation of nitriding is proposed in this paper, using the analogy between diffusion and heat conduction, to overcome the shortcomings of the classical internal oxidation model in predicting the kinetics of layer growth and nitrogen distribution during nitriding. To verify the model, a typical gas nitriding has been carried out on an axisymmetric specimen. Treated specimen has been characterized using optical microscopy (OM), scanning electron microscopy (SEM), micro-hardness and X-Ray diffraction (XRD) measurements. It was found that the so-called diffusion zone can be divided into two parts with different influence on the mechanical characteristics including residual stress and hardening. First layer which is a two phase region of ferritic matrix and γ′ (Fe{sub 4}N) makes further improvement with respect to the second layer which is a solid solution of nitrogen in ferrite. The formation of that two phase region, which is not predicted by classical model, can be efficiently recognized by the proposed model. It is also proved that the model has the ability to consider the geometry dependency of layer growth and formation in nitriding.

  6. Hydrotreatment activities of supported molybdenum nitrides and carbides

    Energy Technology Data Exchange (ETDEWEB)

    Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

    1997-05-01

    The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

  7. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  8. High efficiency nitride based phosphores for white LEDs

    NARCIS (Netherlands)

    Li, Yuan Qiang; Hintzen, H.T.J.M.

    2008-01-01

    In this overview paper, novel rare-earth doped silicon nitride based phosphors for white LEDs applications have been demonstrated. The luminescence properties of orange-red-emitting phosphors (M2Si5N8:Eu2+) and green-to-yellow emitting phosphors (MSi2N2O2:Eu2+, M = Ca, Sr, Ba) are discussed in

  9. Formation of zirconium nitride via mechanochemical decomposition of zircon

    International Nuclear Information System (INIS)

    Puclin, T.; Kaczmarek, W.A.

    1996-01-01

    In this paper we report some results of the mechanochemical reduction of zircon, and for the first time subsequent reaction with nitrogen to form zirconium nitride (ZrN). This process can be described by the equation: 3ZrSiO 4 + 8Al + 1.5N 2 = 4Al 2 O 3 + 3ZrN + 3Si. Milling was carried out in three steps: 1) low speed grinding of Al+ZrSiO 4 in vacuum, 2) high speed milling to effect the reduction, and 3) continued milling after the addition of nitrogen. Powders produced were examined by X-ray diffraction. The first step showed no reaction occurred during low speed grinding. The second step proved to be a slow reaction without the 'ignition' often seen in other mechanochemical reduction works. The final step was also gradual, and did not always go to full nitridation over the duration of the experiment, giving a product of composition ZrN 0.6 to ZrN l.0 . This is quite acceptable as transition metal nitrides are often non-stoichiometric. These results show that the formation of a useful hard material such as ZrN can be formed from a raw mineral by two stage mechanochemical processing. Further investigations are currently being undertaken to eliminate Fe contamination and produce pure ceramic oxide-nitride composites

  10. Effect of microstructure on the high temperature strength of nitride

    Indian Academy of Sciences (India)

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

  11. Cellular growth and dislocation structures in laser-nitrided titanium

    NARCIS (Netherlands)

    Kloosterman, A.B.; Hosson, J.Th.M. De

    1997-01-01

    Transmission electron microscopic observations were made of different dislocation structures in laser-nitrided titanium. Equidistant edge dislocations in the bulk and periodic surface structures exhibit a periodicity within the same order of magnitude. An analysis is presented in which both periodic

  12. Boron nitride elastic and thermal properties. Irradiation effects

    International Nuclear Information System (INIS)

    Jager, Bernard.

    1977-01-01

    The anisotropy of boron nitride (BN) and especially thermal and elastic properties were studied. Specific heat and thermal conductivity between 1.2 and 300K, thermal conductivity between 4 and 350K and elastic constants C 33 and C 44 were measured. BN was irradiated with electrons at 77K and with neutrons at 27K to determine properties after irradiation [fr

  13. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    Energy Technology Data Exchange (ETDEWEB)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  14. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  15. Gallium Nitride MMICs for mm-Wave Power Operation

    NARCIS (Netherlands)

    Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.

    2009-01-01

    In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The

  16. Analysis of boron nitride by flame spectrometry methods

    International Nuclear Information System (INIS)

    Telegin, G.F.; Chapysheva, G.Ya.; Shilkina, N.N.

    1989-01-01

    A rapid method has been developed for determination of free and total boron contents as well as trace impurities in boron nitride by using autoclave sample decomposition followed by atomic emission and atomic absorption determination. The relative standard deviation is not greater than 0.03 in the determination of free boron 0.012 in the determination of total boron content

  17. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  18. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  19. Study on the nitride fuel fabrication for FBR cycle (1)

    International Nuclear Information System (INIS)

    Shinkai, Yasuo; Ono, Kiyoshi; Tanaka, Kenya

    2002-07-01

    In the phase-II of JNC's 'Feasibility Study on Commercialized Fuel Reactor Cycle System (the F/S)', the nitride fuels are selected as candidate for fuels for heavy metal cooled reactor, gas cooled reactor, and small scale reactor. In particular, the coated fuel particles are a promising concept for gas cooled reactor. In addition, it is necessary to study in detail the application possibility of pellet nitride fuel and vibration compaction nitride fuel for heavy metal cooled reactor and small scale reactor in the phase-II. In 2001, we studied more about additional equipments for the nitride fuel fabrication in processes from gelation to carbothermic reduction in the vibration compaction method. The result of reevaluation of off-gas mass flow around carbothermic reduction equipment in the palletizing method, showed that quantity of off-gas flow reduced and its reduction led the operation cost to decrease. We studied the possibility of fabrication of large size particles in the coated fuel particles for helium gas cooled reactor and we made basic technical issues clear. (author)

  20. Characterization of nitrides in an AISI 1010 steel

    International Nuclear Information System (INIS)

    Naquid G, C.

    1998-01-01

    It was characterized the phase formation in the 1010 carbon steel nitrided in a plasma reactor nearby to eutectoid point. The microstructure and identification of these ones were evaluated by Optical microscopy (OM), Dilatometry and X-ray diffraction (XRD). (Author)

  1. Crystallographic phases and magnetic properties of iron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guo-Ke [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Liu, Yan; Zhao, Rui-Bin [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Shen, Jun-Jie [Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Wang, Shang; Shan, Pu-Jia; Zhen, Cong-Mian [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Hou, Deng-Lu, E-mail: houdenglu@mail.hebtu.edu.cn [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China)

    2015-08-31

    Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe.

  2. Crystallographic phases and magnetic properties of iron nitride films

    International Nuclear Information System (INIS)

    Li, Guo-Ke; Liu, Yan; Zhao, Rui-Bin; Shen, Jun-Jie; Wang, Shang; Shan, Pu-Jia; Zhen, Cong-Mian; Hou, Deng-Lu

    2015-01-01

    Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe 4 N, ε-Fe 3−x N (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe 4 N, ε-Fe 3−x N, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe

  3. Sodium Flux Growth of Bulk Gallium Nitride

    Science.gov (United States)

    Von Dollen, Paul Martin

    This dissertation focused on development of a novel apparatus and techniques for crystal growth of bulk gallium nitride (GaN) using the sodium flux method. Though several methods exist to produce bulk GaN, none have been commercialized on an industrial scale. The sodium flux method offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. But the current equipment and methods for sodium flux growth of bulk GaN are generally not amenable to large-scale crystal growth or in situ investigation of growth processes, which has hampered progress. A key task was to prevent sodium loss or migration from the sodium-gallium growth melt while permitting N2 gas to access the growing crystal, which was accomplished by implementing a reflux condensing stem along with a reusable sealed capsule. The reflux condensing stem also enabled direct monitoring and control of the melt temperature, which has not been previously reported for the sodium flux method. Molybdenum-based materials were identified from a corrosion study as candidates for direct containment of the corrosive sodium-gallium melt. Successful introduction of these materials allowed implementation of a crucible-free containment system, which improved process control and can potentially reduce crystal impurity levels. Using the new growth system, the (0001) Ga face (+c plane) growth rate was >50 mum/hr, which is the highest bulk GaN growth rate reported for the sodium flux method. Omega X-ray rocking curve (?-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were 1020 atoms/cm3, possibly due to reactor cleaning and handling procedures. This dissertation also introduced an in situ technique to correlate changes in N2 pressure with dissolution of nitrogen and precipitation of GaN from the sodium-gallium melt. Different stages of N2 pressure decay were identified and linked to

  4. Recombination and photosensitivity centres in boron nitride irradiated with ions

    International Nuclear Information System (INIS)

    Kabyshev, A.; Konusov, F.; Lopatin, V.

    2001-01-01

    The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

  5. Electronic structure calculations on nitride semiconductors and their alloys

    International Nuclear Information System (INIS)

    Dugdale, D.

    2000-09-01

    Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial calculations are performed using the first principles pseudopotential method to obtain accurate lattice constants. Further calculations then investigate bonding in the nitrides through population analysis and density of state calculations. The empirical pseudopotential method is also used in this work. Pseudopotentials for each of the nitrides are constructed using a functional form that allows strained material and alloys to be studied. The conventional k.p valence band parameters for both zincblende and wurtzite are obtained from the empirical band structure using two different methods. A Monte-Carlo fitting of the k.p band structure to the pseudopotential data (or an effective mass method for the zincblende structure) is used to produce one set. Another set is obtained directly from the momentum matrix elements and energy eigenvalues at the centre of the Brillouin zone. Both methods of calculating k.p parameters produce band structure in excellent agreement with the original empirical band calculations near the centre of the Brillouin zone. The advantage of the direct method is that it produces consistent sets of parameters, and can be used in studies involving a series of alloy compositions. Further empirical pseudopotential method calculations are then performed for alloys of the nitrides. In particular, the variation of the band gap with alloy composition is investigated, and good agreement with theory and experiment is found. The direct method is used to obtain k.p parameters for the alloys, and is contrasted with the fitting approach. The behaviour of the nitrides under strain is also studied. In particular. valence band offsets for nitride heterojunctions are calculated, and a strong forward- backward asymmetry in the band offset is found, in good agreement with other results in the literature. (author)

  6. Gallium nitride-based micro-opto-electro-mechanical systems

    Science.gov (United States)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

  7. Ionic nitriding of high chromium martensitic stainless steels

    International Nuclear Information System (INIS)

    Bruhl, S.P; Charadia, R; Vaca, L.S; Cimetta, J

    2008-01-01

    Martensitic stainless steels are used in industrial applications where resistance to corrosion and mechanical resistance are needed simultaneously. These steels are normally used in tempering and annealing condition which gives them hardnesses of 500 and 600 HV (about 54 HRC). Ionic nitriding is an assisted diffusion technique that has recently been successfully applied to harden austenitic stainless steels without reducing their resistance to corrosion. The application with AISI 420 martensitic steels has not given good results yet, because in most cases, it affects their corrosion resistance. This work presents the results of the pulsed nitriding of martensitic steels with a higher chrome content, such as the M340 and M333 Boehler steels and they are compared with the same materials after tempering and annealing, without nitriding. The influence of the variations in the parameters of the process, such as the percentage of active time in the pulsed wave, partial nitrogen pressure, current density and effective tension in the microstructure, hardness and wear and corrosion resistance was studied. The microstructure was studied with an optic microscope; the wear resistance with abrasion tests following ASTM G-65 and corrosion with 100 hour long saline haze tests, in a device built according to ASTM B117. Hardness was found to rise to values of 1000 to 1350 HV in all the steels after ionic nitriding, the modified layers oscillated from 3 to 15 microns. As a result, wear resistance also increased, with differences depending on the microstructure and the thickness of the modified layer. However, corrosion resistance was not good, except in the case of the M333 steel test piece with less hardness and a less thick nitrided layer without a noticeable interphase (au)

  8. Anomalous microstructural changes in III-nitrides under ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  9. Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

    International Nuclear Information System (INIS)

    Dante, Roberto C.; Martin-Ramos, Pablo; Correa-Guimaraes, Adriana; Martin-Gil, Jesus

    2011-01-01

    Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

  10. The Advanced Aluminum Nitride Synthesis Methods and Its Applications: Patent Review.

    Science.gov (United States)

    Shishkin, Roman A; Elagin, Andrey A; Mayorova, Ekaterina S; Beketov, Askold R

    2016-01-01

    High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. However, there is no up-to-date review considering the major issues and the technical solutions for different methods. This review aims to investigate the advanced methods of aluminum nitride synthesis and its development tendencies. Also the aluminum nitride application patents and prospects for development of the branch have been considered. The patent search on "aluminum nitride synthesis" has been carried out. The research activity has been analyzed. Special attention has been paid to the patenting geography and the leading researchers in aluminum nitride synthesis. Aluminum nitride synthesis methods have been divided into 6 main groups, the most studied approaches are carbothermal reduction (88 patents) and direct nitridation (107 patents). The current issues for each group have been analyzed; the main trends are purification of the final product and nanopowder synthesis. The leading researchers in aluminum nitride synthesis have represented 5 countries, namely: Japan, China, Russia, South Korea and USA. The main aluminum nitride application spheres are electronics (59,1 percent of applications) and new materials manufacturing (30,9 percent). The review deals with the state of the art data in nanosized aluminum nitride synthesis, the major issues and the technical solutions for different synthesis methods. It gives a full understanding of the development tendencies and of the current leaders in the sphere.

  11. Plasma nitriding of a precipitation hardening stainless steel to improve erosion and corrosion resistance

    International Nuclear Information System (INIS)

    Cabo, Amado; Bruhl, Sonia P.; Vaca, Laura S.; Charadia, Raul Charadia

    2010-01-01

    Precipitation hardening stainless steels are used as structural materials in the aircraft and the chemical industry because of their good combination of mechanical and corrosion properties. The aim of this work is to analyze the structural changes produced by plasma nitriding in the near surface of Thyroplast PH X Supra®, a PH stainless steel from ThyssenKrupp, and to study the effect of nitriding parameters in wear and corrosion resistance. Samples were first aged and then nitriding was carried out in an industrial facility at two temperatures, with two different nitrogen partial pressures in the gas mixture. After nitriding, samples were cut, polished, mounted in resin and etched with Vilella reagent to reveal the nitrided case. Nitrided structure was also analyzed with XRD. Erosion/Corrosion was tested against sea water and sand flux, and corrosion in a salt spray fog (ASTM B117). All nitrided samples presented high hardness. Samples nitrided at 390 deg C with different nitrogen partial pressure showed similar erosion resistance against water and sand flux. The erosion resistance of the nitrided samples at 500 deg C was the highest and XRD revealed nitrides. Corrosion resistance, on the contrary, was diminished; the samples suffered of general corrosion during the salt spray fog test. (author)

  12. PRODUCTION OF HAFNIUM METAL

    Science.gov (United States)

    Elger, G.W.; Boubel, R.W.

    1963-01-01

    This patent deals with a process of producing pure Hf metal from oxygen- contaminated gaseous Hf chloride. The oxygen compounds in the chioride gas are halogenated by contacting the gas at elevated temperature with Cl/sub 2/ in the presence of C. The Hf chloride, still in gaseous form, is contacted with molten Mg whereby Hf metal is formed and condensed on the Mg. (AEC)

  13. Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided; Caracterizacion microestructural de un acero AISI-SAE 4140 sin nitrurar y nitrurado

    Energy Technology Data Exchange (ETDEWEB)

    Medina F, A.; Naquid G, C. [Gerencia de Ciencia de Materiales, Depto. de Sintesis y Caracterizacion de Materiales, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    2000-07-01

    It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

  14. Nanodefects in ultrahard crystalline cubic boron nitride

    International Nuclear Information System (INIS)

    Nistor, S. V.; Stefan, M.; Goovaerts, E.; Schoemaker, D.

    2002-01-01

    Cubic boron nitride (cBN), the second hardest known material after diamond, exhibits high thermal conductivity and an excellent ability to be n or p doped, which makes it a strong candidate for the next generation of high-temperature micro optical and micro electronic devices. According to recent studies, cBN exhibits a better resistance to radiation damage than diamond, which suggests potential applications in extreme radiation environments. Crystalline cBN powders of up to 0.5 mm linear size is obtained in a similar way as diamond, by catalytic conversion of hexagonal BN (hBN) to cBN at even higher pressures (> 5GPa) and temperatures (∼ 1900 K). Considering the essential role played by the nanodefects (point defects and impurities) in determining its physical properties, it is surprising how limited is the amount of published data concerning the properties of nanodefects in this material, especially by Electron Paramagnetic Resonance (EPR) spectroscopy, the most powerful method for identification and characterization of nanodefects in both insulators and semiconductors. This seems to be due mainly to the absence of natural cBN gems and the extreme difficulties in producing even mm 3 sized synthetic crystals. We shall present our recent EPR studies on cBN crystalline powders, performed in a broad temperature range from room temperature (RT) down to 1.2 K on several sorts of large size cBN powder grits of yellow and amber color for industrial applications. Previous multifrequency (9.3 GHz and 95 GHz) EPR studies of brown to black cBN crystallites prepared with excess of boron, resulted in the discovery of two new types of paramagnetic point defects with different spectral properties, called the D1 and D2 centers. Our X(9.3 GHz)-band EPR investigations resulted in the observation in amber cBN crystalline powders of a spectrum with a strong temperature dependence of the lineshape. It was found that for high and low temperatures, respectively, the numerical

  15. Some new aspects of microstructural development during sintering of silicon nitride

    International Nuclear Information System (INIS)

    Feuer, H.; Woetting, G.; Gugel, E.

    1994-01-01

    The mechanical properties of silicon nitride ceramics strongly depend on their microstructure. However, there is still a lively discussion about the parameters controlling the microstructural development. The current research was stimulated by the observation that a bimodal grain-size distribution in dense silicon nitride has a very beneficial effect on the mechanical properties, especially on the fracture toughness. This paper is focused on the relationship between the α-β-transformation and the densification of silicon nitride powders with different characteristics and sintering additives. Effects of β-grains originally present in the silicon nitride powder, of added β-silicon nitride seeds and of β-crystals formed by the α/β-transformation on the resulting microstructure and on the properties are discussed. The results are summarised in a model describing prerequisites and processing conditions, which are necessary to achieve a bimodal microstructure, i. e. a self-reinforced silicon nitride ceramic. (orig.)

  16. Magnetic properties of Nd3(Fe,Mo)29 compound and its nitride

    International Nuclear Information System (INIS)

    Pan Hongge

    1998-01-01

    The iron-rich ternary intermetallic compound Nd 3 (Fe,Mo) 29 with the Nd 3 (Fe,Ti) 29 -type monoclinic structure and its nitride were prepared. After nitrogenation, the nitride retains the structure of the parent compound, but the unit-cell volume of the nitride is 5.9% greater than that of the parent compound. The Curie temperature of Nd 3 (Fe,Mo) 29 nitride is 70.9% higher than that of the parent compound and the saturation magnetization of the nitride is about 6.6% (at 4.2 K) and 23.7% (at 300 K) higher than that of the parent compound. The anisotropy of the nitride is similar to that of parent compound, which exhibits plane anisotropy. (orig.)

  17. Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

    International Nuclear Information System (INIS)

    Lyon, W.F.; Baker, R.B.; Leggett, R.D.

    1991-01-01

    In this paper, the conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design is performed. As a first step, an intensive literature survey is completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins is designed and analyzed using the SIEX computer code. The analysis predicts that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors

  18. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  19. Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

    International Nuclear Information System (INIS)

    Lyon, W.F.; Baker, R.B.; Leggett, R.D.

    1990-11-01

    The conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design has been performed. As a first step, an intensive literature survey was completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins were designed and analyzed using the SIEX computer code. The analysis predicted that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors. 13 refs., 10 figs., 2 tabs

  20. Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Debaleen [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Sinha, Anil Kumar [ISU, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Homi Bhabha National Institute, BARC, Mumbai 400 094 (India); Chakraborty, Supratic, E-mail: supratic.chakraborty@saha.ac.in [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)

    2016-10-30

    Highlights: • Residual stress estimation thin hafnium oxide film with thickness of <10 nm. • A mathematical expression is proposed for stress estimation of thin-film using GIXRD. • Residual stress varies with argon content in Ar/O{sub 2} plasma and annealing temperature. • Variation of stress is explained by IL swelling and enhanced structural relaxation. - Abstract: Synchrotron radiation-based grazing incidence X-ray diffraction (GI-XRD) technique is employed here to estimate the residual stress of < 10 nm thin hafnium oxide film deposited on Si (100) substrate at different argon/oxygen ratios using reactive rf sputtering. A decrease in residual stress, tensile in nature, is observed at higher annealing temperature for the samples deposited with increasing argon ratio in the Ar/O{sub 2} plasma. The residual stress of the films deposited at higher p{sub Ar} (Ar:O{sub 2} = 4:1) is also found to be decreased with increasing annealing temperature. But the stress is more or less constant with annealing temperature for the films deposited at lower Ar/O{sub 2} (1:4) ratio. All the above phenomena can be explained on the basis of swelling of the interfacial layer and enhanced structural relaxation in the presence of excess Hf in hafnium oxide film during deposition.