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Sample records for grown mn-doped ge

  1. The composition dependence of magnetic, electronic and optical properties of Mn-doped SixGe1-x nanowires

    Science.gov (United States)

    Wei, Jianglin; Lan, Mu; Zhang, Xi; Xiang, Gang

    2017-07-01

    Mn-doped SixGe1-x nanowires (NWs) with different Ge concentrations have been studied by first-principles calculations. It is found that the spin dependent energy bands of the NWs show rich variations both in bandgap width and type (from indirect to direct) as the Ge concentration changes. The Mn-doped SixGe1-x NWs exhibit half-metallic characteristics for all Ge concentrations, and the ground states of the NWs are found to be ferromagnetic (FM). The net magnetization mapping and spin density of states calculations reveal that Mn 3d electrons have a strong hybridization effect with nearest Ge 4p electrons, which results in the Ge’s nontrivial contribution to the magnetic moment of the NWs. Further magnon dispersion studies show that the magnetic order stability of the NWs is influenced by Ge concentrations. Finally, the dependence of the optical properties of the magnetic NWs on the Ge concentration is demonstrated. Our results suggest that Mn-doped SixGe1-x NWs may be useful in spintronic and optoelectronic devices.

  2. Mn-doped Ge self-assembled quantum dots via dewetting of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aouassa, Mansour, E-mail: mansour.aouassa@yahoo.fr [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Jadli, Imen [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Bandyopadhyay, Anup [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Kim, Sung Kyu [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of); Karaman, Ibrahim [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Lee, Jeong Yong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-03-01

    Highlights: • We report the new fabrication approach for producing a self- assembled Mn dpoed Ge quantum dots (QDs) on SiO{sub 2} thin film with a Curie temperature above room temperature. These magnetic QDs are crystalline, monodisperse and have a well-defined shape and a controlled size. The investigation opens new routes for elaboration of self-assembled magnetic nanocrystals - Abstract: In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO{sub 2} thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO{sub 2} thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

  3. Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Motaung, DE

    2014-08-01

    Full Text Available We present a systemic study on the structural, optical and magnetic properties of the un-doped and Mn doped ZnO thin films grown by aerosol spray pyrolysis at different deposition times. XRD profilinghas shown that the structures of the prepared...

  4. Mn-doped Ge self-assembled quantum dots via dewetting of thin films

    Science.gov (United States)

    Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong

    2017-03-01

    In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

  5. Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Adam, Adam Abdalla Elbashir [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China); Alneelain University, Faculty of Science and Technology, Khartoum (Sudan); Cheng, Xiaomin; Guan, Xiawei; Miao, Xiangshui [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China)

    2014-12-15

    In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge{sub 1-x} Mn{sub x} Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350 C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge{sub 1-x} Mn{sub x} Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge{sub 0.96}Mn{sub 0.04}Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge{sub 0.96}Mn{sub 0.04}Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge{sub 0.96}Mn{sub 0.04}Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation. (orig.)

  6. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

    2016-02-29

    The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

  7. Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

    Science.gov (United States)

    Adam, Adam Abdalla Elbashir; Cheng, Xiaomin; Abuelhassan, Hassan H.; Miao, Xiang Shui

    2017-06-01

    Phase-change materials (PCMs) are the most promising candidates to be used as an active media in the universal data storage and spintronic devices, due to their large differences in physical properties of the amorphous-crystalline phase transition behavior. In the present study, the microstructure, magnetic and electrical behaviors of Ge0.94Mn0.06Te thin film were investigated. The crystallographic structure of Ge0.94Mn0.06Te thin film was studied sing X-ray diffractometer (XRD) and High Resolution Transmission Electron Microscope (HR-TEM). The XRD pattern showed that the crystallization structure of the film was rhombohedral phase for GeTe with a preference (202) orientation. The HR-TEM image of the crystalline Ge0.94Mn0.06Te thin film demonstrated that, there were two large crystallites and small amorphous areas. The magnetization as a function of the magnetic field analyses of both amorphous and crystalline states showed the ferromagnetic hysteretic behaviors. Then, the hole carriers concentration of the film was measured and it found to be greater than 1021 cm-3 at room temperature. Moreover, the anomalous of Hall Effect (AHE) was clearly observed for the measuring temperatures 5, 10 and 50 K. The results demonstrated that the magnitude of AHE decreased when the temperature was increasing.

  8. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    Science.gov (United States)

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications. Copyright © 2013 Wiley Periodicals, Inc.

  9. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

    Directory of Open Access Journals (Sweden)

    L. J. Collins-McIntyre

    2014-12-01

    Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  10. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  11. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  12. Growth and characterization of undoped and Mn doped lead-free piezoelectric NBT–KBT single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Babu, G. Anandha, E-mail: anandcgc@gmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Subramaniyan, Raja R. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Bhaumik, Indranil [Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Ganesamoorthy, S. [X-ray Scattering and Crystal Growth Section, Condensed Matter Physics Division, Materials Science Group, IGCAR, Kalpakkam 603102 (India); Ramasamy, P. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Gupta, P.K. [Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2014-05-01

    Highlights: • Single crystals of undoped and Mn doped NKBT crystals are grown by spontaneous nucleation. • Temperature and frequency dependent dielectric constant and loss are measured. • Dielectric constant has increased and the loss has reduced on Mn doped NKBT. • Concentration of oxygen vacancies has been reduced in Mn doped NKBT. • The activation energy for undoped and Mn doped NKBT are calculated. - Abstract: Lead-free piezoelectric single crystals of undoped and 1 wt% Mn doped 0.80 Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–0.20 K{sub 0.5}Bi{sub 0.5}TiO{sub 3} (NKBT) was grown using self-flux. Powder X-ray diffraction analysis revealed that the grown crystals belong to tetragonal system at room temperature. The lattice strain was calculated from Williamson Hall relation for undoped and Mn doped NKBT crystals. A significant change is observed in dielectric behavior of Mn doped NKBT when compared to undoped sample. The diffuseness increased substantially on Mn doped NKBT which masked the ferroelectric to antiferroelectric transition in the dielectric constant plot. The AC impedance study revealed that the conduction is governed by the singly ionized oxygen vacancy. Further, the decrease in the conductivity on Mn doping suggests that Mn replaces the Bi vacancy, which reduces the oxygen vacancy.

  13. Research Update: Strain and composition effects on ferromagnetism of Mn0.05Ge0.95 quantum dots

    Directory of Open Access Journals (Sweden)

    Liming Wang

    2016-04-01

    Full Text Available Mn0.05Ge0.95 quantum dots (QDs samples were grown by molecular beam epitaxy on Si substrates and 15-nm-thick fully strained Si0.8Ge0.2 virtual substrates, respectively. The QDs samples grown on the Si0.8Ge0.2 virtual substrates show a significant ferromagnetism with a Curie temperature of 227 K, while the QDs samples grown on the Si substrates are non-ferromagnetic. Microstructures of the QDs samples were characterized by high resolution transmission electron microscopy and synchrotron radiation X-ray diffraction. Interdependence between microstructure and ferromagnetism of Mn-doped Ge QDs was investigated. For the QDs sample grown on the strained Si0.8Ge0.2 virtual substrate, although the ferromagnetic phase Mn5Ge3 clusters were found to be formed in small dome-shaped dots, the significant ferromagnetism observed in that sample is attributed to ferromagnetic phase Mn-doped large dome-shaped Ge QDs, rather than to the ferromagnetic phase Mn5Ge3 clusters. The fully strained Si0.8Ge0.2 virtual substrates would result in a residual strain into the QDs and an increase in Ge composition in the QDs. Both consequences favor the formations of ferromagnetic phase Mn-doped Ge QDs from points of view of quantum confinement effect as well as Mn doping at substitutional sites.

  14. Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

    DEFF Research Database (Denmark)

    Kovács, A.; Sadowski, J.; Kasama, Takeshi

    2013-01-01

    The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate ...

  15. Structural, morphological and optical properties of Mn doped ZnS nanocrystals

    Directory of Open Access Journals (Sweden)

    V. D. Mote

    2013-12-01

    Full Text Available Mn doped ZnS samples with composition formula Zn1-xMn xS where x = 0, 0.02, 0.05 and 0.10 were prepared by chemical method. Samples characterized for its structural, morphological and optical properties by X-ray diffraction (XRD, transmission electron microscope (TEM, Fourier transform infrared spectroscopy (FTIR and UV-vis spectrometry. XRD patterns confirm cubic zinc blend structure with no secondary phases for pure and Mn doped ZnS. Lattice constant value increases slightly with Mn concentration due to the substitution of Mn in ZnO lattice. TEM images show that the particles have spherical in shape with an average particle size 3-4 nm. The chemical species of the grown crystals are identified by FTIR spectra. Optical absorption spectra show decrement in band gap with increasing Mn concentration.

  16. Structural, morphological and optical properties of Mn doped ZnS nanocrystals

    Directory of Open Access Journals (Sweden)

    V. D. Mote

    2013-09-01

    Full Text Available Mn doped ZnS samples with composition formula Zn1-xMn xS where x = 0.00, 0.02, 0.05 and 0.10 were prepared by chemical method. Samples characterized for its structural, morphological and optical properties by X-ray diffraction (XRD, transmission electron microscopy (TEM, Fourier transform infrared spectroscopy (FTIR and UV-vis spectrometer. XRD patterns confirm cubic zinc blend structure with no secondary phases for pure and Mn doped ZnS. Lattice constant value increases slightly with Mn concentration due to the substitution of Mn in ZnS lattice. TEM images show that the particles have spherical in shape with an average particle size between 3-4 nm. The chemical species of the grown crystals are identified by FTIR spectra. Optical absorption spectra show decrement in band gap with increasing Mn concentration.

  17. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  18. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  19. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-01-01

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10 20  cm −3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed

  20. Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

    International Nuclear Information System (INIS)

    Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

    2003-01-01

    We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

  1. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  2. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    Science.gov (United States)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  3. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge1-xSnx layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads...... to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  4. Oriented Mn-doped CuO nanowire arrays

    Science.gov (United States)

    Han, Dongqiang; Wu, Zhaofeng; Wang, Zhihe; Yang, Shaoguang

    2016-04-01

    Using anodic aluminum oxide membranes as the nanoreactors and controller, oriented nanowire arrays of the diluted magnetic semiconductor Mn-doped CuO have been successfully fabricated using Mn(NO3)2 · 4H2O and Cu(NO3)2 · 3H2O as the starting materials. X-ray diffraction measurements showed that the as-prepared oriented nanowire arrays are of high purity. Scanning electron microscope and transmission electron microscope studies showed the nanowires are oriented, continuous and uniform with a diameter and length of about 170 nm and several tens of micrometers, respectively, and thus of a high aspect ratio. Low-temperature magnetic measurements showed the ferromagnetic property of the oriented Mn-doped CuO nanowire arrays with the critical temperature at around 80 K, which will endow them with great potential applications in spintronics in the future.

  5. Photodegradation of m-cresol with synthesized Mn doped ZnO nanoparticles under visible light

    International Nuclear Information System (INIS)

    Abdollahi, Y.; Abdul Halim Abdullah; Zainal, Z.

    2009-01-01

    Full text: Various percent of Mn-doped ZnO nanoparticles were synthesized by co-precipitation method. They have been tested in photodegradation of m-cresol under visible light irradiation. Optimum photodegradation was observed with 1.0 wt % Mn-doped ZnO. Undoped and 1.0 wt % Mn doped Photo catalysts were characterized by means of X-ray diffraction (XRD), atomic force microscopic (AFM), and transmission electron microscopy (TEM). The optical absorption was examined using UV-vis spectrophotometer. The results showed that 1.0 wt % Mn-doped ZnO comparing with undoped ZnO had higher surface area, and finer particles size. Also optical absorption shifted to visible light in 1.0 wt % Mn doped ZnO. Therefore, Mn doping in ZnO may enhance the photo catalyst activity of ZnO under visible light. (author)

  6. Mn-doped CdS quantum dots sensitized hierarchical TiO2 flower-rod for solar cell application

    Science.gov (United States)

    Yu, Libo; Li, Zhen; Liu, Yingbo; Cheng, Fa; Sun, Shuqing

    2014-06-01

    A double-layered TiO2 film which three dimensional (3D) flowers grown on highly ordered self-assembled one dimensional (1D) TiO2 nanorods was synthesized directly on transparent fluorine-doped tin oxide (FTO) conducting glass substrate by a facile hydrothermal method and was applied as photoanode in Mn-doped CdS quantum dots sensitized solar cells (QDSSCs). The 3D TiO2 flowers with the increased surface areas can adsorb more QDs, which increased the absorption of light; meanwhile 1D TiO2 nanorods beneath the flowers offered a direct electrical pathway for photogenerated electrons, accelerating the electron transfer rate. A typical type II band alignment which can effectively separate photogenerated excitons and reduce recombination of electrons and holes was constructed by Mn-doped CdS QDs and TiO2 flower-rod. The incident photon-to-current conversion efficiency (IPCE) of the Mn-doped CdS/TiO2 flower-rod solar cell reached to 40% with the polysulfide electrolyte filled in the solar cell. The power conversion efficiency (PCE) of 1.09% was obtained with the Mn-doped CdS/TiO2 flower-rod solar cell under one sun illumination (AM 1.5G, 100 mW/cm2), which is 105.7% higher than that of the CdS/TiO2 nanorod solar cell (0.53%).

  7. Site Determination of Zn and Mn Doping into Protein Encapsulated Fe3O4 Nanoparticles

    Science.gov (United States)

    Pool, V.; Klem, M.; Holroyd, J.; Harris, T.; Szilagyi, R.; Douglas, T.; Young, M.; Idzerda, Y. U.

    2008-05-01

    In this study, particles grown inside ferritin protein cages with 10%, 15%, 20% and 33% zinc or manganese doped into Fe3O4 were measured by XAS and XMCD. These spectra were compared to standards and molecular-orbital calculations to determine where in the Fe3O4 spinel structure the dopant is substituting. Doping into the various Fe-sites of the Fe3O4 spinel structure suggests that there will be a significantly different magnetic moment per iron lattice position depending on whether the A-site or B-site is favored. For Zn-doping, our results support Zn in the +2 valance state and preferentially substituting in the B-site octahedral site. For Mn-doping, we find Mn also prefers the B-site octahedral site, but may cause a structural transition to the γ-phase Fe2O3.

  8. Growth and magnetic properties of Mn-doped ZnSiAs{sub 2}/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kochura, Aleksey [Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, 53851 Lappeenranta (Finland); Kursk State Technical University, ul. 50 let Oktyabrya 94, 305040 Kursk (Russian Federation); Fedorchenko, Irina; Marenkin, Sergey [Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991 Moscow (Russian Federation); Laiho, Reino [Wihuri Physical Laboratory, University of Turku, 20014, Turku (Finland); Lashkul, Alexander [Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, 53851 Lappeenranta (Finland); Wihuri Physical Laboratory, University of Turku, 20014, Turku (Finland); Zakharov, Ivan [Kursk State Technical University, ul. 50 let Oktyabrya 94, 305040 Kursk (Russian Federation); Laehderanta, Erkki

    2009-05-15

    Mn-doped ZnSiAs{sub 2}/Si heterostructures were grown by vacuum-thermal deposition of ZnAs{sub 2} and Mn layers on Si substrates followed by annealing. The surface contained a ZnSiAs{sub 2} film, but also micro-crystals with a composition close to ZnAs{sub 2} or ZnSiAs{sub 2}-Si-SiAs eutectic. The temperature and field dependencies of the magnetization were measured. Two types of magnetic phases were detected: a paramagnetic one with the mean magnetic moment of 7.6 Bohr magnetons, formed by Mn{sup 2+} ions, and a ferromagnetic one with Curie temperature 340 K in 50 kOe magnetic field, formed by MnAs clusters. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  10. SiGe quantum dot molecules grown on patterned Si (001) substrates

    International Nuclear Information System (INIS)

    Yang Hongbin; Zhang Xiangjiu; Jiang Zuiming; Yang Xinju; Fan Yongliang

    2008-01-01

    SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness of the Si 0.8 Ge 0.2 film was 40 nm, QDMs only appeared in the unpatterned areas of the Si substrate and none could be found inside the windows of 6x6 μm 2 on the same substrate. However, when the thickness of Si 0.8 Ge 0.2 film was increased to 80 nm, QDMs appeared both inside the windows and in the unpatterned areas, and the density of QDMs was reduced with the decrease in the window size. We attribute these results to the different strain relaxations in different size windows, which are caused by the edge effect of the epitaxial film in the window. Based on these experimental results we discuss the formation and the size stability of the QDMs and conclude that the formation of the SiGe QDM originates from an intrinsic cause of the strain relief mechanism. This work also shows that by means of the edge induced strain relaxation of the epitaxial film in the window, it is possible to reveal the influence of the strain on some physical properties of the SiGe film without changing its Ge atomic fraction

  11. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  12. Preparation of nanometer sized Mn doped Zn based oxides powder for DMS applications

    CSIR Research Space (South Africa)

    Das, J

    2009-01-01

    Full Text Available In order to study the size dependent DMS (Diluted Magnetic Semiconductor) behavior of Mn doped ZnO, the authors have systematically prepared a series of nanosized green powder based on Mn doped ZnO (Zn 1-x Mn x O, where x=0.02 - 0.1) materials using...

  13. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

    2011-01-05

    We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

  14. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  15. Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    D' Costa, Vijay Richard, E-mail: vdcosta@asu.edu; Wang, Wei; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2016-08-14

    We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

  16. Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

    Directory of Open Access Journals (Sweden)

    Horoz Sabit

    2018-03-01

    Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

  17. Effect of Mn doping on the structural, optical, and magnetic properties of In{sub 2}O{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shiqi; An, Yukai; Duan, Lingshen; Liu, Huarui; Liu, Jiwen [Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices and School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Wu, Zhonghua [Beijing Synchrotron Radiation Facility (BSRF), Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2013-11-15

    (In{sub 1−x}Mn{sub x}){sub 2}O{sub 3} films were grown by radio frequency-magnetron sputtering technique. Effect of Mn doping on the structural, optical, and magnetic properties of films is investigated systematically. The detailed structure analyses suggest that Mn ions substitute for In{sup 3+} sites of the In{sub 2}O{sub 3} lattice in the valence of +2 states, and Mn-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. All films show typical room temperature ferromagnetism. The saturation magnetization M{sub s} increases first, and then decreases, while carrier concentration n{sub c} decreases monotonically with Mn doping, implying that the ferromagnetism is not directly induced by the mediated carriers. The optical bandgap E{sub g} of films decreases monotonically with the increase of Mn concentration, and there exists a linear functional dependence between E{sub g} and n{sub c}{sup 2/3}, which is consistent with Burstein-Moss shift arguments. It can be concluded that the ferromagnetic order in Mn-doped In{sub 2}O{sub 3} films is intrinsic, arising from Mn atoms substitution for the In sites of In{sub 2}O{sub 3} lattice. The oxygen vacancies play a mediation role on the ferromagnetic couplings between the Mn ions.

  18. Synthesis and characterization of Mn-doped ZnO column arrays

    International Nuclear Information System (INIS)

    Yang Mei; Guo Zhixing; Qiu Kehui; Long Jianping; Yin Guangfu; Guan Denggao; Liu Sutian; Zhou Shijie

    2010-01-01

    Mn-doped ZnO column arrays were successfully synthesized by conventional sol-gel process. Effect of Mn/Zn atomic ratio and reaction time were investigated, and the morphology, tropism and optical properties of Mn-doped ZnO column arrays were characterized by SEM, XRD and photoluminescence (PL) spectroscopy. The result shows that a Mn/Zn atomic ratio of 0.1 and growth time of 12 h are the optimal condition for the preparation of densely distributed ZnO column arrays. XRD analysis shows that Mn-doped ZnO column arrays are highly c-axis oriented. As for Mn-doped ZnO column arrays, obvious increase of photoluminescence intensity is observed at the wavelength of ∼395 nm and ∼413 nm, compared to pure ZnO column arrays.

  19. TiO-Based Organic Hybrid Solar Cells with Mn+ Doping

    Directory of Open Access Journals (Sweden)

    Zühal Alparslan

    2011-01-01

    Full Text Available A hybrid solar cell is designed and proposed as a feasible and reasonable alternative, according to acquired efficiency with the employment of TiO2 (titanium dioxide and Mn-doped TiO2 thin films. In the scope of this work, TiO2 (titanium dioxide and Mn:TiO2 hybrid organic thin films are proposed as charge transporter layer in polymer solar cells. Poly(3-hexylthiophene:phenyl-C61-butyric acid methyl ester (P3HT: PCBM is used as active layer. When the Mn-doped TiO2 solar cells were compared with pure TiO2 cells, Mn-doped samples revealed a noteworthy efficiency enhancement with respect to undoped-TiO2-based cells. The highest conversion efficiency was obtained to be 2.44% at the ratio of 3.5% (wt/wt Mn doping.

  20. Synthesis and characterization of Mn-doped ZnO column arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yang Mei [College of Materials and Chemistry and Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Guo Zhixing, E-mail: submission001@hotmail.com [School of Manufacturing Science and Engineering, Sichuan University, Yihuan Street, Chengdu 610065 (China); Qiu Kehui; Long Jianping [College of Materials and Chemistry and Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Yin Guangfu [College of Materials Science and Engineering, Sichuan University, Chengdu 610065 (China); Guan Denggao; Liu Sutian; Zhou Shijie [College of Materials and Chemistry and Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China)

    2010-04-15

    Mn-doped ZnO column arrays were successfully synthesized by conventional sol-gel process. Effect of Mn/Zn atomic ratio and reaction time were investigated, and the morphology, tropism and optical properties of Mn-doped ZnO column arrays were characterized by SEM, XRD and photoluminescence (PL) spectroscopy. The result shows that a Mn/Zn atomic ratio of 0.1 and growth time of 12 h are the optimal condition for the preparation of densely distributed ZnO column arrays. XRD analysis shows that Mn-doped ZnO column arrays are highly c-axis oriented. As for Mn-doped ZnO column arrays, obvious increase of photoluminescence intensity is observed at the wavelength of {approx}395 nm and {approx}413 nm, compared to pure ZnO column arrays.

  1. The interface quality of Ge nanoparticles grown in thick silica matrix

    Energy Technology Data Exchange (ETDEWEB)

    Dasović, J.; Dubček, P.; Pucić, I. [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia); Bernstorff, S. [Elettra-Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS) (Italy); Radić, N. [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia); Pivac, B., E-mail: pivac@irb.hr [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia)

    2017-08-31

    Highlights: • Ge nanoparticles were grown in SiO{sub 2} matrix by magnetron sputtering. • GISAXS analysis was used to study nanoparticles. • Nanoparticle's surface exhibit fractal nature that affect other properties. - Abstract: Germanium nanoparticles, or Ge quantum dots (QDs), embedded in different transparent dielectric matrix exhibit properties significantly different from the same bulk semiconductor and therefore exhibit a considerable potential for applications in advanced electronic and optoelectronic devices. It is expected that the quantum confinement effect will tune the optical bandgap simply by varying the QDs size. Nevertheless, the question remains whether and how the defects often present in the matrix or at interfaces affect their properties. A thick (SiO{sub 2} + Ge) layer was deposited by magnetron sputtering and after suitable thermal treatment spherical Ge QDs were formed in SiO{sub 2} matrix with rather narrow size distribution, as confirmed by GIWAXS and GISAXS analysis. It is shown that the formed surface/interface of the QDs with the matrix was rough with fractal nature. Annealing in N{sub 2} atmosphere produced photoluminescence (PL) in the visible part of the spectrum which consists of three contributions. All are attributed to structural defects at or close to the Ge/SiO{sub x} interface. Time-resolved PL results support the assumption that the three components are dominant in the observed luminescence.

  2. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Directory of Open Access Journals (Sweden)

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  3. Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates

    International Nuclear Information System (INIS)

    Brehm, Moritz; Grydlik, Martyna; Tayagaki, Takeshi; Schmidt, Oliver G; Langer, Gregor; Schäffler, Friedrich

    2015-01-01

    We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photoluminescence spectroscopy (PL). These were grown on pit-patterned Si(001) substrates with a wide range of pit-periods and thus inter QD-distances (425–3400 nm). By exploiting almost arbitrary inter-QD distances achievable in this way we are able to choose the number of QDs that contribute to the PL emission in a range between 70 and less than three QDs. This well-defined system allows us to clarify, by PL-investigation, several points which are important for the understanding of the formation and optical properties of ordered QDs. We directly trace and quantify the amount of Ge transferred from the surrounding wetting layer (WL) to the QDs in the pits. Moreover, by exploiting different pit-shapes, we reveal the role of strain-induced activation energy barriers that have to be overcome for charge carriers generated outside the dots. These need to diffuse between the energy minimum of the WL in and between the pits, and the one in the QDs. In addition, we demonstrate that the WL in the pits is already severely intermixed with Si before upright QDs nucleate, which further enhances intermixing of ordered QDs as compared to QDs grown on planar substrates. Furthermore, we quantitatively determine the amount of Ge transferred by surface diffusion through the border region between planar and patterned substrate. This is important for the growth of ordered islands on patterned fields of finite size. We highlight that the Ge WL-facets in the pits act as PL emission centres, similar to upright QDs. (paper)

  4. Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.

    Science.gov (United States)

    Shu, Qijiang; Wang, Rongfei; Yang, Jie; Zhang, Mingling; Zeng, Tianjian; Sun, Tao; Wang, Chong; Yang, Yu

    2018-03-02

    A series of zero-dimensional Ge/Si quantum dots (QDs) samples are fabricated by inducing the transformation from the two-dimensional Ge thin film, which is grown by the traditional direct current (DC) magnetron sputtering, via regulating the annealing process. The QD density increases sharply after the post rapid thermal annealing (PRTA). The observations of atomic force microscopy (AFM) and Raman spectroscopy suggest that the good morphology of Ge QDs results from an appropriate thermodynamics and kinetics surrounding shaped by the cooperative interaction of the Ge-Si lattice mismatch, the film's surface temperature, and the difference in thermal expansion coefficients between Ge and Si. The photoluminescence (PL) peaks of Ge QDs are detected in monolayer Ge QDs with ultrahigh density at 17 K. The Metal-Ge/Si QDs-Metal (MGM) photodetector fabricated from the ultrahigh-density QDs sample exhibits a relatively high current gain, absolute photoelectric responsivity, and internal quantum efficiency (IQE). Our results demonstrate that the high-quality Ge QDs with strong light absorption and quantum confinement effect can be realized by modulating DC magnetron sputtering and the PRTA process. This paves the way for realizing silicon-based optoelectronic devices with high performance by the traditional, relatively low-cost, and large-scale production nanomaterial fabricating method.

  5. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  6. Electrochemical sensing property of Mn doped V2O5 nanoparticles

    International Nuclear Information System (INIS)

    Suresh, R.; Giribabu, K.; Manigandan, R.; Narayanan, V.; Vijayalakshmi, L.; Stephen, A.

    2012-01-01

    In this study, pure V 2 O 5 and Mn doped V 2 O 5 nanoparticles were synthesized by thermal decomposition method. The FT-IR spectrum of Mn doped V 2 O 5 shows the bands at 822 and 1027 cm -1 which essentiaIIy of crystalline V 2 O 5 . Further, the bands observed in Mn doped V 2 O 5 are all shifted to lower wave number than the V 2 O 5 . The optical property of the nanocomposite was studied using UV-Visible absorption spectroscopy. The XRD data also revealed that the Mn doped V 2 O 5 obtained had an orthorhombic structure. The diffraction peaks in Mn doped V 2 O 5 nanoparticles are similar to that of V 2 O 5 . There was no indication of any other impurities in the sample. However, all the peaks of V 2 O 5 are slightly shifted to tower 2θ values. The FE-SEM image of V 2 O 5 shows that the particles adopt ellipse-like particles with different sizes due to aggregation. The synthesized nanoparticles were used to modify glassy carbon electrode (GCE) and the modified electrode was used to detect uric acid (UA) by voltammetric techniques. The effects of Mn on the optical, morphological and electrochemical detecting property of V 2 O 5 have also been studied. (author)

  7. Preparation of Mn doped CeO{sub 2} nanoparticles with enhanced ferromagnetism

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, S., E-mail: sravi@mepcoeng.ac.in; Winfred Shashikanth, F.

    2017-06-15

    Spherical-like CeO{sub 2} and Mn-doped CeO{sub 2} using 6-aminohexanoic acid as surfactant exhibit enhanced ferromagnetism. The optical absorption spectra reveal a red shift with a band gap of 2.51 eV. The mechanics of ferromagnetism and the red shift were analyzed. These results provide a promising platform for developing a dilute magnetic semiconductor in spintronics. - Highlights: • Pure and Mn-doped CeO{sub 2} is prepared with aminohexanoic acid as capping. • They exhibit wide optical absorption with red-shift in their band gap. • Mn-doped CeO{sub 2} nanoparticle exhibit hysteresis at room temperature. • Results were promising to use in spintronics and opto-electronics field.

  8. Synthesis and Fluorescence Property of Mn-Doped ZnSe Nanowires

    Directory of Open Access Journals (Sweden)

    Dongmei Han

    2010-01-01

    Full Text Available Water-soluble Mn-doped ZnSe luminescent nanowires were successfully prepared by hydrothermal method without any heavy metal ions and toxic reagents. The morphology, composition, and property of the products were investigated. The experimental results showed that the Mn-doped ZnSe nanowires were single well crystallized and had a zinc blende structure. The average length of the nanowires was about 2-3 μm, and the diameter was 80 nm. With the increase of Mn2+-doped concentration, the absorbance peak showed large difference. The UV-vis absorbance spectrum showed that the Mn-doped ZnSe nanowires had a sharp absorption band appearing at 360 nm. The PL spectrum revealed that the nanowires had two distinct emission bands centered at 432 and 580 nm.

  9. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  10. Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

    Science.gov (United States)

    Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.

    2012-02-01

    We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-Ωcm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ≈4×1011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper

  11. Structural, morphological and optical properties of Mn doped ZnS nanocrystals

    OpenAIRE

    V. D. Mote; Y. Purushotham; B. N. Dole

    2013-01-01

    Mn doped ZnS samples with composition formula Zn1-xMn xS where x = 0.00, 0.02, 0.05 and 0.10 were prepared by chemical method. Samples characterized for its structural, morphological and optical properties by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and UV-vis spectrometer. XRD patterns confirm cubic zinc blend structure with no secondary phases for pure and Mn doped ZnS. Lattice constant value increases slightly with Mn c...

  12. Epitaxial metastable Ge1-yCy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites

    International Nuclear Information System (INIS)

    D'Arcy-Gall, J.; Desjardins, P.; Petrov, I.; Greene, J. E.; Paultre, J.-E.; Masut, R. A.; Gujrathi, S. C.; Roorda, S.

    2000-01-01

    Epitaxial metastable Ge 1-y C y alloy layers with y≤0.02 were grown on Ge(001) at temperatures T s =200-550 degree sign C using hyperthermal Ge and C beams with average energies of 16 and 24 eV, respectively, in order to investigate C incorporation pathways in the Ge lattice. High-resolution reciprocal lattice maps show that all as-deposited alloy layers are fully coherent with the substrate. Layers grown at T s ≤350 degree sign C are in compression due to higher C concentrations in interstitial than in substitutional sites. The compressive strain decreases (i.e., the substitutional C concentration increases) with increasing T s within this temperature range. At higher growth temperatures, as-deposited alloys are nearly strain free since the majority of the incorporated C is trapped at extended defects. Annealing the Ge 1-y C y layers at T a =450 and 550 degree sign C leads to a significant increase, proportional to the strain in the as-deposited films, in compressive strain. Further annealing at T a =650 degree sign C results in the formation of dislocation loops which act as sinks for interstitial and substitutional C atoms and thus relieves residual macroscopic strain. Finally, we show that the large compressive strain associated with interstitial C atoms must be accounted for in order to determine the total incorporated C fraction from diffraction analyses. (c) 2000 American Institute of Physics

  13. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    International Nuclear Information System (INIS)

    Ye, Han; Yu, Zhongyuan

    2014-01-01

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications

  14. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Han, E-mail: Dabombyh@aliyun.com; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.China (China)

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  15. Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

    International Nuclear Information System (INIS)

    Shaleev, M.V.; Novikov, A.V.; Kuznetsov, O.A.; Yablonsky, A.N.; Vostokov, N.V.; Drozdov, Yu.N.; Lobanov, D.N.; Krasilnik, Z.F.

    2005-01-01

    In this work, the results obtained in growth of Ge(Si) self-assembled islands on relaxed Si 1-x Ge x /Si(0 0 1) buffer layers (x ∼ 25%) and their photoluminescence study are presented. It is found out that growth of Ge(Si)/Si 1-x Ge x islands proceeds with an abrupt change in the surface morphology that is similar to the earlier observed transition (from dome to hut islands with a decreasing Ge growth temperature) in the case of island growth on Si(0 0 1) substrates. It is revealed that in growth of Ge(Si)/Si 1-x Ge x islands, in contrast to the Ge(Si)/Si(0 0 1) islands case, the interval of growth temperatures, in which there is a change in the islands morphology (dome-hut transition) shifts towards higher temperatures. For the first time a photoluminescence signal from Ge(Si) self-assembled islands embedded in a strained Si layer is observed

  16. Synthesis of Mn-doped CeO2 nanorods and their application as ...

    Indian Academy of Sciences (India)

    Mn-doped CeO2; nanorods; humidity sensitivity. 1. Introduction. It is well known that rare earth oxides have been widely used in electronics, magnetic, chemical engineering, and functional materials for their special characteristics. Cerium oxides have been found to be highly interesting materi- als in processes related to the ...

  17. Synthesis of Mn-doped CeO2 nanorods and their application as ...

    Indian Academy of Sciences (India)

    as humidity sensors. C H HU, C H XIA. ∗. , F WANG, M ZHOU, P F YIN and X Y HAN. Science College of Chongqing Jiaotong University, Chongqing 400074, PR China. MS received 10 October 2010; revised 21 December 2010. Abstract. Mn-doped CeO2 nanorods have been prepared from CeO2 particles through a facile ...

  18. Structural refinement, photoluminescence and Raman spectroscopy of wurtzite Mn-doped Zn O pellets

    Energy Technology Data Exchange (ETDEWEB)

    Marquina, J.; Martin, J.; Luengo, J.; Vera, F.; Roa, L. [Centro de Estudios Avanzados en Optica, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Gonzalez, J. [Centro de Estudios de Semiconductores, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of); Rodriguez, F.; Renero L, C.; Valiente, R. [Malta-Consolider Team, CITIMAC, Facultad de Ciencias, Universidad de Cantabria, Santander 69005 (Spain); Delgado, G. E., E-mail: marquinajesus@gmail.com [Laboratorio de Cristalografia, Facultad de Ciencias, Universidad de los Andes, Merida 5101 (Venezuela, Bolivarian Republic of)

    2017-11-01

    We report the results of the Rietveld refinement, photoluminescence and Raman spectroscopy of Mn-doped Zn O ceramic pellets. Rietveld refinement shows that samples crystallize in the wurtzite structure and for the Mn-doped sample indicated that the Mn atoms substitute the Zn tetrahedral crystallographic sites in the Zn O host lattice. The emission and absorption spectra of Mn-doped Zn O have been investigated in the visible-UV region and the data have been interpreted in terms of the wurtzite Zn O electronic structure. Two broad bands, one due to superposition between donor bound excitons (DX) and free excitons (FX) and other due free-to bond excitonic recombination (FB) dominates the low-temperature photoluminescence spectra of Mn-doped Zn O bulk. In the Raman spectrum, an extra mode at ∼520 cm{sup -1} has been observed in agreement with earlier works, and it is an indicator for the incorporation of Mn{sup +2} ions into the Zn O host matrix since it is not is observed in Zn O pristine. Rietveld refinement of the X-ray diffraction patterns, energy-dispersive X-ray spectroscopy (EDS) technique, and Raman spectroscopies were performed to study these effects. (Author)

  19. Structural and electrical properties of single crystalline SrZrO 3 epitaxially grown on Ge (001)

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

    2017-08-28

    We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.

  20. Magnetic exchange interactions in Mn doped ZnSnAs{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Bouhani-Benziane, H.; Sahnoun, O. [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Sahnoun, M., E-mail: sahnoun_cum@yahoo.fr [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Department of Chemistry, University of Fribourg (Switzerland); Driz, M. [Laboratoire de Sciences des Matériaux (LSM), University of Sidi Bel Abbes (Algeria); Daul, C. [Department of Chemistry, University of Fribourg (Switzerland)

    2015-12-15

    Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within generalized gradient approximation have been performed for Mn doped ZnSnAs{sub 2} chalcopyrites, focusing on their electronic and magnetic properties as a function of the geometry related to low Mn-impurity concentration and the spin magnetic alignment (i.e., ferromagnetic vs antiferromagnetic). As expected, Mn is found to be a source of holes and localized magnetic moments of about 4 µ{sub B} per Mn atom are calculated which are sufficiently large. The defect calculations are firstly performed by replacing a single cation (namely Zn and Sn) with a single Mn atom in the pure chalcopyrite ZnSnAs{sub 2} supercell, and their corresponding formation energies show that the substitution of a Sn atom (rather than Zn) by Mn is strongly favored. Thereafter, a comparison of total energy differences between ferromagnetic (FM) and antiferromagnetic (AFM) are given. Surprisingly, the exchange interaction between a Mn pairs is found to oscillate with the distance between them. Consequently, the AFM alignment is energetically favored in Mn-doped ZnSnAs{sub 2} compounds, except for low impurity concentration associated with lower distances between neighboring Mn impurities, in this case the stabilization of FM increases. Moreover, the ferromagnetic alignment in the Mn-doped ZnSnAs{sub 2} systems behaves half-metallic; the valence band for majority spin orientation is partially filled while there is a gap in the density of states for the minority spin orientation. This semiconducting gap of ~1 eV opened up in the minority channel and is due to the large bonding–antibonding splitting from the p–d hybridization. Our findings suggest that the Mn-doped ZnSnAs{sub 2} chalcopyrites could be a different class of ferromagnetic semiconductors. - Highlights: • ab initio calculations were performed on Mn doped ZnSnAs{sub 2} chalcopyrite. • Substitution of a Sn atom (rather than Zn) by Mn

  1. A quantum explanation of the magnetic properties of Mn-doped graphene

    International Nuclear Information System (INIS)

    Lei Tian-Min; Liu Jia-Jia; Zhang Yu-Ming; Guo Hui; Zhang Zhi-Yong

    2013-01-01

    Mn-doped graphene is investigated using first-principles calculations based on the density functional theory (DFT). The magnetic moment is calculated for systems of various sizes, and the atomic populations and the density of states (DOS) are analyzed in detail. It is found that Mn doped graphene-based diluted magnetic semiconductors (DMS) have strong ferromagnetic properties, the impurity concentration influences the value of the magnetic moment, and the magnetic moment of the 8×8 supercell is greatest for a single impurity. The graphene containing two Mn atoms together is more stable in the 7×7 supercell. The analysis of the total DOS and partial density of states (PDOS) indicates that the magnetic properties of doped graphene originate from the p—d exchange, and the magnetism is given a simple quantum explanation using the Ruderman—Kittel—Kasuya—Yosida (RKKY) exchange theory

  2. Synthesis of Mn-doped CeO2 nanorods and their application as ...

    Indian Academy of Sciences (India)

    The responses to humidity for static and dynamic testing proved dopingMn into CeO2 can improve the humidity sensitivity. For the sample with Mn% about 1.22, the resistance changes from 375.3 to 2.7M as the relative humidity (RH) increases from 25 to 90%, indicating promising applications of the Mn-doped CeO2 ...

  3. Mn-doped quantum dot sensitized solar cells: a strategy to boost efficiency over 5%.

    Science.gov (United States)

    Santra, Pralay K; Kamat, Prashant V

    2012-02-08

    To make Quantum Dot Sensitized Solar Cells (QDSC) competitive, it is necessary to achieve power conversion efficiencies comparable to other emerging solar cell technologies. By employing Mn(2+) doping of CdS, we have now succeeded in significantly improving QDSC performance. QDSC constructed with Mn-doped-CdS/CdSe deposited on mesoscopic TiO(2) film as photoanode, Cu(2)S/Graphene Oxide composite electrode, and sulfide/polysulfide electrolyte deliver power conversion efficiency of 5.4%.

  4. Magnetic properties of microwave-synthesized Mn-doped SnO2 nanoparticles

    Science.gov (United States)

    Salah, Numan; Habib, Sami; Azam, Ameer

    2016-11-01

    Semiconductor nanostructures with dilute magnetic property are of great importance for different applications. However, this property depends on several factors including the synthesis route. In this work, manganese (Mn)-doped tin dioxide (SnO2) nanoparticles (NPs) at different concentrations were synthesized by the microwave-assisted synthesis method and evaluated for their magnetic properties. The X-ray diffraction analyses revealed a single-phase rutile-type tetragonal structure, while SEM and TEM images showed fine NPs with average sizes around 10 nm. A considerable increase in value of the energy band gap by around 0.18 eV as a result of Mn doping was observed. This dopant has also increased the lattice d-spacing value, but slightly decreased the lattice constant c. The magnetic measurement result showed that all the microwave-synthesized Mn-doped SnO2 NPs including the pure one have distinctly wide hysteresis loops, indicating that samples have room temperature ferromagnetism (RTFM). RTFM was further enhanced by Mn doping reaching maximum at a concentration of 0.3 mol%. This magnetism could be attributed to the presence of defects at the grain boundaries within the NPs, interfacing sites between the NPs, oxygen or tin vacancies and an optimum level of Mn dopant. The observed wide hysteresis loops in these samples might be due to the use of a surfactant at high concentration that could provide highly compact/tight NPs. These results might be useful for producing nanoscale magnets and magnetic memory devices.

  5. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  6. Raman scattering investigations on Co and Mn doped ZnO epitaxial films: local vibration modes and defect associated ferromagnetism

    Science.gov (United States)

    Cao, Qiang; Liu, Guolei; Yan, Shishen; Mei, Liangmo

    2014-03-01

    The studies of local vibration modes (LVMs) of Co or Mn substitution in wurtzite ZnO lattice have been rather limited, and evolution of LVM bound defects as well as associated ferromagnetism are still poorly understood.In this paper, Raman scattering spectroscopy has been performed on high quality Co and Mn doped ZnO epitaxial films, which were grown on Al2O3 (0001) by oxygen-plasma assisted molecular beam epitaxy. Raman measurements revealed two local vibration modes (LVMs) at 723 and 699 cm?1 due to the substitution of Co2+ in wurtzite ZnO lattice. The LVM at 723 cm?1 is found to be an elemental sensitive vibration mode for Co substitution. The LVM at 699cm-1 can be attributed to enrichment of Co2+ bound with oxygen vacancy, the cobalt?oxygen vacancy?cobalt complexes, which associated with ferromagnetism. It reveals two competitive local vibration modes (LVMs) at 712 and 523 cm-1 due to the substitution of Mn ions in wurtzite ZnO lattice. The LVM at 712cm-1 is found to be an elemental vibration mode of Mn substitution in wurtzite ZnO lattice, while the LVM at 523cm-1 can be attributed to the local vibration mode of acceptor bound Mn substitution in wurtzite ZnO lattice. the NSF Grant NO. 11374189 and 51231007.

  7. Synthesis of Mn-doped ZnS microspheres with enhanced visible light photocatalytic activity

    Science.gov (United States)

    Wang, Lu; Wang, Peng; Huang, Baibiao; Ma, Xiaojuan; Wang, Gang; Dai, Ying; Zhang, Xiaoyang; Qin, Xiaoyan

    2017-01-01

    ZnS microspheres with a series of Mn-doping concentration were synthesized via a facile solvothermal route. The phase structures, morphologies, and chemical states were characterized by X-ray powder diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The phase structure of the synthesized Mn-ZnS microspheres is hexagonal from the XRD patterns. UV-vis diffuse reflectance spectra were employed to analyze the absorption properties of the samples. The Mn-doped ZnS exhibited stronger visible light absorption with the increasing of Mn content. Their photocatalytic activities were evaluated by H2 production from water and reducing Cr6+ under visible light irradiation. The as-prepared Mn-doped ZnS exhibited better photocatalytic performance than that of pure ZnS and the optimal doping concentration was 7%. The enhancement in photocatalytic activity can be attributed to the expansion of light absorption and the increase in life time of photogenerated carriers.

  8. Thermal decomposition study of Mn doped Fe3O4 nanoparticles

    Science.gov (United States)

    Malek, Tasmira J.; Chaki, S. H.; Tailor, J. P.; Deshpande, M. P.

    2016-05-01

    Fe3O4 is an excellent magnetic material among iron oxides. It has a cubic inverse spinel structure exhibiting distinguished electric and magnetic properties. In this paper the authors report the synthesis of Mn doped Fe3O4 nanoparticles by wet chemical reduction technique at ambient temperature and its thermal characterization. Ferric chloride hexa-hydrate (FeCl3•6H2O), manganese chloride tetra-hydrate (MnCl2•4H2O) and sodium boro-hydrate (NaBH4) were used for synthesis of Fe3O4 nanoparticles at ambient temperature. The elemental composition of the as-synthesized Mn doped Fe3O4 nanoparticles were determined by energy dispersive analysis of X-rays (EDAX) technique. Thermogravimetric (TG) and differential thermal analysis (DTA) were carried out on the Mn doped Fe3O4 nanoparticles in the temperature range of ambient to 1124 K. The thermo-curves revealed that the particles decompose by four steps. The kinetic parameters were evaluated using non-mechanistic equations for the thermal decomposition.

  9. Synthesis, characterization and electrochemical study of Mn-doped TiO2 decorated polypyrrole nanotubes

    Science.gov (United States)

    Saidur, M. R.; Aziz, A. R. Abdul; Basirun, W. J.

    2017-06-01

    Nanostructured conductive polymers are the growing interest in the field of electrochemistry due to their superior conductivity and environmental friendliness. The existence of transition metal oxides could improve their nanostructure as well as conductive properties. In this study, polypyrrole nanotubes are synthesized in the presence of TiO2 and manganese (Mn)-doped TiO2 nanoparticles (NPs) to investigate their electrochemical properties. Details characterization of the synthesized composites were done by X-Ray diffraction (XRD) and TEM. The TEM analysis shows that doping of TiO2 with Mn decrease the grain size of the TiO2 nanoparticles and successively its effects on the synthesis of the PPy nanotubes (PPyNTs). TEM confirmed that PPyNTs synthesized in the presence of Mn-doped TiO2 are thinner in size compare to the PPyNTs synthesized in presence of pure TiO2. The electrochemical effectiveness of the synthesized PPy nanocomposite was investigated using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). CV and EIS both on a modified glassy carbon electrode reveal the better electron transportability for the Mn-doped TiO2 PPyNTs due to the synergistic effect of doping and decreased the size of PPyNTs as well as increased surface area.

  10. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    Directory of Open Access Journals (Sweden)

    Hao-Min Xu

    2016-11-01

    Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

  11. Bright and high-photostable inner-Mn-doped core/giant-shell quantum dots

    Science.gov (United States)

    Xu, Ruilin; Huang, Bo; Wang, Tian; Yuan, Yufen; Zhang, Lei; Lu, Changgui; Cui, Yiping; Zhang, Jiayu

    2017-11-01

    Compared with quantum-dot (QD) displays, QD lighting possesses higher demand of photostability. Owing to high photostability from the combination of inner independent luminescence center and thick shell (≥15 monolayers (MLs)), inner-Mn-doped core/giant-shell QDs with bright wide emission are a promising candidate for QD lighting. Aiming at bright and high-photostable giant QDs with low time cost (giant-shell growth time: within 20 min), we put forward the perfect combination strategy of hot-injection nucleation doping and optimized ;flash; synthesis, going beyond the combination strategy of one-pot growth doping and typical ;flash; synthesis, which led to an increase in photoluminescence (PL) quantum yield (QY) of giant Mn-doped CdS/ZnS QDs (ZnS shell: ∼18 MLs) from ≤20% to 40%. The PLQY was enhanced to 45% by light annealing. Using traditional LED as the reference, these simply-encapsulated QDs can exhibit the high photostability, throwing light of the application of these inner-Mn-doped core/giant-shell QDs even for QD lighting.

  12. Synthesis of Mn-doped ZnS microspheres with enhanced visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lu [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Wang, Peng, E-mail: pengwangicm@sdu.edu.cn [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Huang, Baibiao, E-mail: bbhuang@sdu.edu.cn [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Ma, Xiaojuan [School of Physics, Shandong University, Jinan 250100 (China); Wang, Gang [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China); Dai, Ying [School of Physics, Shandong University, Jinan 250100 (China); Zhang, Xiaoyang; Qin, Xiaoyan [State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2017-01-01

    Highlights: • Hexagonal Mn-ZnS microspheres were obtained by one step solvothermal method. • Mn{sup 2+} doping improved visible light response and charge carrier separation. • Mn-ZnS displayed superior performance in hydrogen evolution and Cr{sup 6+} reduction. • The optimum dopant content was 7%. - Abstract: ZnS microspheres with a series of Mn-doping concentration were synthesized via a facile solvothermal route. The phase structures, morphologies, and chemical states were characterized by X-ray powder diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The phase structure of the synthesized Mn-ZnS microspheres is hexagonal from the XRD patterns. UV–vis diffuse reflectance spectra were employed to analyze the absorption properties of the samples. The Mn-doped ZnS exhibited stronger visible light absorption with the increasing of Mn content. Their photocatalytic activities were evaluated by H{sub 2} production from water and reducing Cr{sup 6+} under visible light irradiation. The as-prepared Mn-doped ZnS exhibited better photocatalytic performance than that of pure ZnS and the optimal doping concentration was 7%. The enhancement in photocatalytic activity can be attributed to the expansion of light absorption and the increase in life time of photogenerated carriers.

  13. Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

    Directory of Open Access Journals (Sweden)

    Fuchun Zhang

    2015-05-01

    Full Text Available The geometric structures, electronic and magnetic properties of Mn-doped ZnO nanowires were investigated using density functional theory. The results indicated that all the calculated energy differences were negative, and the energy of the ground state was 0.229 eV lower than ferromagnetic coupling, which show higher stability in antiferromagnetic coupling. The calculated results indicated that obvious spin splitting phenomenon occurred near the Femi level. The Zn atoms on the inner layer of ZnO nanowires are easily substituted by Mn atoms along the [0001] direction. It was also shown that the Mn2+-O2−-Mn2+ magnetic coupling formed by intermediate O atom was proved to be caused by orbital hybridization between Mn 3d and O 2p states. The magnetic moments were mainly attributed to the unpaired Mn 3d orbitals, but not relevant with doping position of Mn atoms. Moreover, the optical properties of Mn-doped ZnO nanowires exhibited a novel blue-shifted optical absorption and enhanced ultraviolet-light emission. The above results show that the Mn-doped ZnO nanowires are a new type of magneto-optical materials with great promise.

  14. Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Singha, R.K. [Department of Physics, Visva-Bharati, Santiniketan 731235 (India); Manna, S.; Bar, R.; Das, S. [Department of Physics, Indian Institute of Technology-Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology-Kharagpur, Kharagpur 721302 (India)

    2017-06-15

    Highlights: We have elaborately explained the individual Ge QD charging phenomena and current transport, which is very important to understand the Ge/Si nano devices. This paper will give a flavor to properly understand these phenomena linked together along with the photocurrent mechanism which is related to the Ge/Si valence band offset. • Both the CAFM and KPFM techniques point out the functionality of doping nature of the underneath Si substrate on the aforementioned characteristics of Ge QDs. • Analysis of the surface potential mapping using KPFM technique yields an approximate valence band offset measurement which is required to understand the intra-valence transition of holes for the realization of long wavelength infrared photodetector. • KPFM and CAFM can be utilized to explore the charging/discharging phenomena of dots and their composition variations. • Current-voltage (I–V) characteristics of the individual Ge QD strongly depends on the individual QD size. • Energy band diagrams for diamond tip and Ge QD shows the higher barrier for electrons and lower barrier for holes allowing the easy tunneling for holes to dominate the transport. - Abstract: It is fundamentally important to understand the nanoscale electronic properties of a single quantum dot (QD) contrary to an ensemble of QDs. Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (CAFM) are two important tools, which could be employed to probe surface potential, charging phenomena, and current transport mechanism of individual QD. We demonstrate the aforementioned characteristics of self-assembled Ge QDs, which was grown on Si substrates by solid source molecular beam epitaxy driven by the Stranski-Krastanov method. Study reveals that each Ge QD acts as charge storage node even at zero applied bias. The shape, size and density of QDs could be well probed by CAFM and KPFM, whereas QD facets could be better resolved by the conductive tip. The CAFM investigation

  15. The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

    International Nuclear Information System (INIS)

    Briones Cruz, Almira; Shen Qing; Toyoda, Taro

    2006-01-01

    Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

  16. Effects of Mn doping on structural, dielectric and multiferroic properties of BiFeO{sub 3} nanoceramics

    Energy Technology Data Exchange (ETDEWEB)

    Dhanalakshmi, B., E-mail: deepthi0527@gmail.com [Department of Physics, Andhra University, Visakhapatnam, 530003 (India); Pratap, K. [Thin Film Magnetism Group, Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Rao, B. Parvatheeswara; Rao, P.S.V. Subba [Department of Physics, Andhra University, Visakhapatnam, 530003 (India)

    2016-08-15

    Undoped and Mn doped multiferroic BiFeO{sub 3} nanoparticles were synthesized by sol-gel autocombustion method. Structural studies on the samples were carried out by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, thermogravimetry and Fourier transform infrared spectroscopy techniques. Dielectric and conductivity measurements on the samples have been made in a wide range of frequencies and temperatures. BFO sample exhibits typical dielectric behaviour whereas the Mn doped BFO sample shows anomalous dielectric behaviour which has been attributed to charge carrier hopping mechanisms initiated by structural inhomogeneities and formation of Bi/O vacancies. Ferroelectric and magnetic studies on the samples were made by the corresponding hysteresis loop measurements. The results indicate that the doping of Mn in bismuth sites in the BiFeO{sub 3}, in spite of the enhanced conductivity, has produced considerable improvements both in remnant electric polarization (from 0.0811 to 0.6241 μC/mm{sup 2}) and saturation magnetization (from 0.53 to 2.54 emu/g) due to the enhanced magnetically driven distortion of spiral spin cycloid by the presence of Mn in mixed valance states. The improved ferroelectric and ferromagnetic properties and the possible magnetoelectric coupling between the ferroic orders of the Mn doped BiFeO{sub 3} makes it suitable for magnetoelectric devices. - Highlights: • Undoped and Mn doped BiFeO{sub 3} nanoparticles were synthesized and characterized by XRD, SEM, EDS, FTIR and TG-DTA techniques. • Chemical synthesis of BiFeO{sub 3} and Mn doped BiFeO{sub 3} leads to perovskite R3c phase with fine grained microstructures. • Mn doping brings in Mn{sup 3+} ⇔ Mn{sup 4+} conduction mechanism resulting in higher conductivity and high dielectric constants. • Mn doping causes increases in ferroelectric and magnetic orders due to enhanced magnetic ordering.

  17. Toxicological aspects of photocatalytic degradation of selected xenobiotics with nano-sized Mn-doped TiO2.

    Science.gov (United States)

    Ozmen, Murat; Güngördü, Abbas; Erdemoglu, Sema; Ozmen, Nesrin; Asilturk, Meltem

    2015-08-01

    The toxic effects of two selected xenobiotics, bisphenol A (BPA) and atrazine (ATZ), were evaluated after photocatalytic degradation using nano-sized, Mn-doped TiO2. Undoped and Mn-doped TiO2 nanoparticles were synthesized. The samples were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV-vis-diffuse reflectance spectra (DRS), X-ray fluorescence spectroscopy (XRF), and BET surface area. The photocatalytic efficiency of the undoped and Mn-doped TiO2 was evaluated for BPA and ATZ. The toxicity of the synthesized photocatalysts and photocatalytic by-products of BPA and ATZ was determined using frog embryos and tadpoles, zebrafish embryos, and bioluminescent bacteria. Possible toxic effects were also evaluated using selected enzyme biomarkers. The results showed that Mn-doped TiO2 nanoparticles did not cause significant lethality in Xenopus laevis embryos and tadpoles, but nonfiltered samples caused lethality in zebrafish. Furthermore, Mn-doping of TiO2 increased the photocatalytic degradation capability of nanoparticles, and it successfully degraded BPA and AZT, but degradation of AZT caused an increase of the lethal effects on both tadpoles and fish embryos. Degradation of BPA caused a significant reduction of lethal effects, especially after 2-4h of degradation. However, biochemical assays showed that both Mn-doped TiO2 and the degradation by-products caused a significant change of selected biomarkers on X. laevis tadpoles; thus, the ecological risks of Mn-doped TiO2 should be considered due to nanomaterial applications and for spilled nanoparticles in an aquatic ecosystem. Also, the risk of nanoparticles should be considered using indicator reference biochemical markers to verify the environmental health impacts. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    Science.gov (United States)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  19. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  20. Toxicological aspects of photocatalytic degradation of selected xenobiotics with nano-sized Mn-doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ozmen, Murat, E-mail: murat.ozmen@inonu.edu.tr [Inonu University, Faculty of Science, Department of Biology, Malatya (Turkey); Güngördü, Abbas [Inonu University, Faculty of Science, Department of Biology, Malatya (Turkey); Erdemoglu, Sema [Inonu University, Faculty of Science, Department of Chemistry, Malatya (Turkey); Ozmen, Nesrin [Inonu University, Faculty of Education, Department of Science Teaching Program, Malatya (Turkey); Asilturk, Meltem [Akdeniz University, Department of Materials Science and Engineering, Antalya (Turkey)

    2015-08-15

    Highlights: • Undoped and Mn-doped TiO{sub 2} nanoparticles were synthesized and characterized. • The photocatalytic efficiency of the photocatalysts was evaluated for BPA and ATZ. • Toxicity of photocatalysts and photocatalytic by-products were determined. • Mn-doped TiO{sub 2} nanoparticles did not cause significant lethality on X. laevis. • Degradation of BPA caused a significant reduction of lethal effects. - Abstract: The toxic effects of two selected xenobiotics, bisphenol A (BPA) and atrazine (ATZ), were evaluated after photocatalytic degradation using nano-sized, Mn-doped TiO{sub 2}. Undoped and Mn-doped TiO{sub 2} nanoparticles were synthesized. The samples were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV–vis-diffuse reflectance spectra (DRS), X-ray fluorescence spectroscopy (XRF), and BET surface area. The photocatalytic efficiency of the undoped and Mn-doped TiO{sub 2} was evaluated for BPA and ATZ. The toxicity of the synthesized photocatalysts and photocatalytic by-products of BPA and ATZ was determined using frog embryos and tadpoles, zebrafish embryos, and bioluminescent bacteria. Possible toxic effects were also evaluated using selected enzyme biomarkers. The results showed that Mn-doped TiO{sub 2} nanoparticles did not cause significant lethality in Xenopus laevis embryos and tadpoles, but nonfiltered samples caused lethality in zebrafish. Furthermore, Mn-doping of TiO{sub 2} increased the photocatalytic degradation capability of nanoparticles, and it successfully degraded BPA and AZT, but degradation of AZT caused an increase of the lethal effects on both tadpoles and fish embryos. Degradation of BPA caused a significant reduction of lethal effects, especially after 2–4 h of degradation. However, biochemical assays showed that both Mn-doped TiO{sub 2} and the degradation by-products caused a significant change of selected biomarkers on X. laevis tadpoles; thus, the ecological risks of Mn-doped

  1. Synthesis and characterization of Mn doped ZnS d-dots with controllable dual-color emissions.

    Science.gov (United States)

    Dong, Bohua; Cao, Lixin; Su, Ge; Liu, Wei

    2012-02-01

    High-quality Mn doped ZnS d-dots were successfully synthesized via an alternative route based on the solvothermal method using oleic acid as stabilizing agent. X-ray diffraction (XRD), transmission electron microscopy (TEM) as well as photoluminescence (PL) spectra were employed to characterize the obtained samples. The as-obtained d-dots are highly crystalline and uniform sized, and they can be well dispersed in hexane to form stable and clear colloidal solution. The optical properties of the d-dots with different Mn doped concentration are investigated in detail. The Mn doped ZnS d-dots have two emission bands, including surface state emission (blue) and Mn emission (orange), which are both sensitivity to the Mn doped concentration. By varying the Mn doped concentration, the relative PL intensities of dual-color emissions can be well manipulated, showing their application in tunable color output. Furthermore, a subsequent ligand exchange has been introduced to give the d-dots hydrophilic surfaces, which are favorable for biological applications. Copyright © 2011 Elsevier Inc. All rights reserved.

  2. Hydrothermal synthesis of Mn-doped ZnCo2O4 electrode material for high-performance supercapacitor

    Science.gov (United States)

    Mary, A. Juliet Christina; Bose, A. Chandra

    2017-12-01

    Mn-doped ZnCo2O4 nanoparticle has been synthesized by hydrothermal method without adding any surfactants. Structural, morphological and electrochemical performances have been studied for the pure and various concentration of Mn-doped ZnCo2O4 nanoparticles. XRD and Raman studies demonstrate the crystalline structure of the material. Specific capacitance of the 10 wt% Mn doped ZnCo2O4 nanomaterial is analysed using the three-electrode system. 10 wt% Mn-doped ZnCo2O4 has a maximum capacitance of 707.4 F g-1 at a current density of 0.5 A g-1. Coulombic efficiency of the material is 96.3% for 500 cycles in the KOH electrolyte medium. A two-electrode device using 10 wt% Mn-doped ZnCo2O4 exhibits the highest specific capacitance of 6.5 F g-1 at a current density of 0.03 A g-1 which is the suitable material for supercapacitor application.

  3. Investigating the effect of Mn-doped CeO2 nanoparticles by co-precipitation method

    Science.gov (United States)

    Prabaharan, D. Durai Manoharadoss; Sadaiyandi, K.; Mahendran, M.; Sagadevan, Suresh

    2018-02-01

    The paper exhibits a detailed study about the synthesis and characterization in analysis of structural, morphological, optical and electrical investigations of pure and Mn-doped Cerium oxide (CeO2) nanoparticles which were synthesized by co-precipitation technique. Phase formation of the prepared sample was analyzed with powder X-ray diffraction (PXRD) examines, scanning electron microscopy (SEM) examination. The PXRD comes about affirmed partial crystallinity having cubic phases and the crystallite sizes of the pure and Mn-doped Cerium oxide (CeO2) were estimated by utilizing Debye-Scherrer's formula and they were calculated to be 12 and 14 nm individually. SEM pictures revealed that the particles were profoundly accumulated and were of permeable nature. The optical properties of pure and Mn-doped CeO2 were ascertained by using UV-visible absorption spectrum. The estimated band gap values for the pure and the Mn-doped CeO2 nanoparticles were observed to be 2.7 and 2.6 eV, respectively, utilizing UV-Vis spectroscopy. At different frequencies and temperatures the dielectric properties of the Mn-doped Cerium oxide (CeO2) nanoparticles, for example, the dielectric consistent, the dielectric loss and the AC conductivity, were studied.

  4. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Loh Ter-Hoe

    2007-01-01

    Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

  5. Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z. P.; Song, Y. X.; Li, Y. Y.; Wu, X. Y.; Zhu, Z. Y. S.; Han, Y.; Zhang, L. Y.; Huang, H.; Wang, S. M.

    2017-10-01

    GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600°C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700°C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500°C.

  6. Determination of atropine using Mn-doped ZnS quantum dots as novel luminescent sensitizers

    International Nuclear Information System (INIS)

    Azizi, Seyed Naser; Chaichi, Mohammad Javad; Shakeri, Parmis; Bekhradnia, Ahmadreza

    2013-01-01

    A novel chemiluminescence (CL) method using water-soluble Mn-doped ZnS quantum dots (QDs) as sensitizers is proposed for the chemiluminometric determination of atropine in pharmaceutical formulation. Water-soluble Mn-doped ZnS QDs were synthesized by using L-cysteine as stabilizer in aqueous solutions. The nanoparticles were structurally and optically characterized by X-ray powder diffraction (XRD), dynamic light scattering (DLS), Fourier transform infrared spectroscopy (FTIR), UV–vis absorption spectroscopy and photoluminescence (PL) emission spectroscopy. It was found that ZnS quantum dots acted as enhancers of the weak CL emission produced upon oxidation of sulfite by Ce(IV) in acidic medium. Trace amounts of atropine improved the sensitize effect of ZnS quantum dots yielding a significant chemiluminescence enhancement of the Ce(IV)–SO 3 2− –ZnS QD system. Therefore, a new CL analysis system was developed for the determination of atropine. Under the optimum conditions, there is a good linear relationship between the relative chemiluminescence intensity and the concentration of atropine in the range of 1×10 −9 –1×10 −6 M of atropine with a correlation coefficient (R 2 ) of 0.9992. The limit of detection of this system was found to be 2.54×10 −10 M. This method is not only simple, sensitive and low cost, but also reliable for practical applications. -- Highlights: • Mn-doped ZnS quantum dots could enhance the chemiluminescence (CL) of cerium(IV)–sodium sulfite system. • ZnS quantum dots were used as the nanocatalyst. • Trace amounts of atropine improved the sensitize effect of ZnS quantum dots. • This work is introduced as a new method for the determination of atropine commercial drugs. • Detection limit of atropine was obtained 2.54×10 −10 mol L −1

  7. Electronic and magnetic correlations in Mn doped ZnO nano-rods

    Science.gov (United States)

    Samariya, Arvind; Sharma, S. C.; Dhawan, M. S.; Sharma, P. K.; Kumar, Sudhish; Sharma, K. B.; Dolia, S. N.; Singhal, R. K.

    2013-06-01

    We have investigated correlation between magnetization and electronic structure in Zn0.98Mn0.02O nano-rods. Rietveld analysis of XRD patterns confirms that Mn ions incorporate at the Zn2+ sites. SQUID measurements confirm that Mn doping induces room temperature ferromagnetism (RTFM) in nano-rods and the induced magnetization is an order of magnitude higher than that in the bulk Zn0.98Mn0.02O. The XPS results show that Mn ions are in mixed valent state. Our findings show that bivalence of Mn ions and the oxygen vacancies are responsible for the observed RTFM.

  8. Oxygen nonstoichiometry and defects in Mn-doped Gd2Ti2O7+x

    International Nuclear Information System (INIS)

    Porat, O.; Tuller, H.L.

    1996-01-01

    The oxygen nonstoichiometry in Mn-doped Gd 2 Ti 2 O 7 , Gd 2 (Ti 0.975 Mn 0.025 ) 2 O 7+x , was measured electrochemically, as a function of temperature and oxygen partial pressure, with the aid of an oxygen titration cell. The analysis of the data shows that the defect equilibrium can be described by considering the dominant point defects to be neutral oxygen interstitials, doubly charged oxygen vacancies, and trivalent and quadrivalent Mn ions substituted in the Ti sites. The enthalpies for the formation of neutral oxygen interstitials and trivalent Mn are determined

  9. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  10. Bandgap- and Radial-Position-Dependent Mn-Doped Zn-Cu-In-S/ZnS Core/Shell Nanocrystals.

    Science.gov (United States)

    Peng, Lucheng; Huang, Keke; Zhang, Zhuolei; Zhang, Ying; Shi, Zhan; Xie, Renguo; Yang, Wensheng

    2016-03-03

    This paper presents a mechanistic study on the doping of Zn-Cu-In-S/ZnS core/shell quantum dots (QDs) with Mn by changing the Zn-Cu-In-S QD bandgap and dopant position inside the samples (Zn-Cu-In-S core and ZnS shell). Results show that for the Mn:Zn-Cu-In-S/ZnS system, a Mn-doped emission can be obtained when the bandgap value of the QDs is larger than the energy of Mn-doped emission. Conversely, a bandgap emission is only observed for the doped system when the bandgap value of QDs is smaller than the energy gap of the Mn-doped emission. In the Zn-Cu-In-S/Mn:ZnS systems, doped QDs show dual emissions, consisting of bandgap and Mn dopant emissions, instead of one emission band when the value of the host bandgap is larger than the energy of the Mn-doped emission. These findings indicate that the emission from Mn-doped Zn-Cu-In-S/ZnS core/shell QDs depends on the bandgap of the QDs and the dopant position inside the core/shell material. The critical bandgap of the host materials is estimated to have the same value as the energy of the Mn d-d transition. Subsequently, the mechanism of photoluminescence properties of the Mn:Zn-Cu-In-S/ZnS and Zn-Cu-In-S/Mn:ZnS core/shell QD systems is proposed. Control experiments are then carried out by preparing Mn-doped Zn(Cu)-In-S QDs with various bandgaps, and the results confirm the reliability of the suggested mechanism. Therefore, the proposed mechanism can aid the design and synthesis of novel host materials in fabricating doped QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Compositional uniformity of a Si0.5Ge0.5 crystal grown on board the International Space Station

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Inatomi, Y.; Tsukada, T.; Miyata, H.; Tanaka, R.; Yoshikawa, J.; Kihara, T.; Tomioka, H.; Shibayama, H.; Kubota, Y.; Warashina, Y.; Ishizuka, Y.; Harada, Y.; Wada, S.; Ito, T.; Nagai, N.; Abe, K.; Sumioka, S.; Takayanagi, M.; Yoda, S.

    2015-06-01

    A Si0.5Ge0.5 crystal was grown on board the International Space Station (ISS) using the traveling liquidus-zone method. Average Ge concentration was 49±2 at% for the growth length of 14.5 mm. Radial compositional uniformity was excellent especially between the growth length of 3 and 9 mm; concentration fluctuation was less than 1 at%. In this experiment, cartridge surface temperatures were monitored and heater temperatures were adjusted based on the monitored temperatures for improving compositional uniformity of a grown crystal. A step temperature change by 1 °C was imposed for adjusting heater temperatures. This procedure made it possible to observe growth interface shape; striations due to heater temperature change were observed by a backscattered electron image. Growth rates were precisely determined by the relation between interval of heater temperature change and the distance between striations. Based on the measured growth rates, two-dimensional growth model for the traveling liquidus-zone method was discussed.

  12. Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

    Science.gov (United States)

    Yan, Jun-Feng; You, Tian-Gui; Zhang, Zhi-Yong; Tian, Jiang-Xiao; Yun, Jiang-Ni; Zhao, Wu

    2011-04-01

    Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδm is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδe is weakened, owing to the fact that ions Mn2+ enter the crystal lattice of ZnO.

  13. Formation mechanism and luminescence appearance of Mn-doped zinc silicate particles synthesized in supercritical water

    International Nuclear Information System (INIS)

    Takesue, Masafumi; Suino, Atsuko; Hakuta, Yukiya; Hayashi, Hiromichi; Smith, Richard Lee

    2008-01-01

    Luminescence appearance of Mn-doped zinc silicate (Zn 2 SiO 4 :Mn 2+ , ZSM) formed in supercritical water at 400 deg. C and 29 MPa at reaction times from 1 to 4320 min was studied in the relation to its phase formation mechanism. Appearance of luminescent ZSM from green emission by α-ZSM and yellow emission by β-ZSM occurred over the same time period during the onset of phase formation at a reaction time of 2 min. Luminescence appeared at a much lower temperature and at shorter reaction times than the conventional solid-state reaction. Needle-like-shaped α-ZSM was the most stable particle shape and phase in the supercritical water reaction environment and particles formed via two routes: a homogenous nucleation route and a heterogenous route that involves solid-state diffusion and recrystallization. - Graphical abstract: Luminescence appearance of Mn-doped zinc silicate (Zn 2 SiO 4 :Mn 2+ , ZSM) formed in supercritical water at 400 deg. C and 29 MPa were studied in the relation to its phase formation mechanism. Green emission by α-ZSM and yellow emission by β-ZSM occurred over the same time period during the onset of phase formation

  14. Strong two-photon absorption of Mn-doped CsPbCl3 perovskite nanocrystals

    Science.gov (United States)

    He, Tingchao; Li, Junzi; Ren, Can; Xiao, Shuyu; Li, Yiwen; Chen, Rui; Lin, Xiaodong

    2017-11-01

    Emerging CsPbX3 (X = Cl, Br, and I) perovskite nanocrystals (NCs) have been demonstrated to be efficient emitters with a high fluorescence quantum yield, making these materials interesting for optical applications as well as for fundamental physics. Interestingly, doping with transition metal ions has been extensively explored as a way of introducing new optical, electronic, and magnetic properties, making perovskite NCs much more functional than their undoped counterparts. However, there have been no reports regarding the nonlinear optical properties of transition metal ion doped perovskite NCs. Herein, by using femtosecond-transient absorption spectroscopy, we have determined the one-photon linear absorption cross-section (˜1.42 × 10-14 cm2) of Mn-doped CsPbCl3 NCs (˜11.7 ± 1.8 nm size, ˜0.2% doping concentration, and ˜600 nm emission wavelength). More importantly, their nonlinear optical properties—in particular, the two-photon absorption (TPA) and resultant emission—were investigated. Notably, the NCs exhibit wavelength-dependent TPA with a maximum value up to ˜3.18 × 105 GM at a wavelength of 720 nm. Our results indicate that Mn-doped CsPbCl3 NCs show promise in nonlinear optical devices and multiphoton fluorescence lifetime imaging.

  15. Flower-Like Mn-Doped CeO2 Microstructures: Synthesis, Characterizations, and Catalytic Properties

    Directory of Open Access Journals (Sweden)

    Ling Liu

    2015-01-01

    Full Text Available Mn-doped CeO2 flower-like microstructures have been synthesized by a facile method, involving the precipitation of metallic alkoxide precursor in a polyol process from the reaction of CeCl3·7H2O with ethylene glycol in the presence of urea followed by calcination. By introducing manganese ions, the composition can be freely manipulated. To investigate whether there was a hybrid synergic effect in CH4 combustion reaction, further detailed characteristics of Mn-doped CeO2 with various manganese contents were revealed by XRD, Raman, FT-IR, SEM, EDS, XPS, OSC, H2-TPR, and N2 adsorption-desorption measurements. The doping manganese is demonstrated to increase the storage of oxygen vacancy for CH4 and enhance the redox capability, which can efficiently convert CH4 to CO2 and H2O under oxygen-rich condition. The excellent catalytic performance of MCO-3 sample, which was obtained with the starting Mn/Ce ratios of 0.2 in the initial reactant compositions, is associated with the larger surface area and richer surface active oxygen species.

  16. Tunable Band Gap Energy of Mn-Doped ZnO Nanoparticles Using the Coprecipitation Technique

    Directory of Open Access Journals (Sweden)

    Tong Ling Tan

    2014-01-01

    Full Text Available A simple coprecipitation technique was introduced to form manganese (Mn doped on zinc oxide (ZnO nanoparticles effectively. Based on our morphological studies, it was revealed that mean particle size was increased while bigger agglomeration of nanoparticles could be observed as the amount of concentration of Mn was increased. Interestingly, it was found that the position of the absorption spectra was shifted towards the lower wavelength (UV region as correlated with the increasing of Mn dopants concentration into ZnO nanoparticles. This result inferred that optimum content of Mn doped into the ZnO nanoparticles was crucial in controlling the visible/UV-responsive of samples. In the present study, 3 mol% of Mn dopants into the ZnO nanoparticles exhibited the better UV as well as visible light-responsive as compared to the other samples. The main reason might be attributed to the modification of electronic structure of ZnO nanoparticles via lattice doping of Mn ions into the lattice, whereas excessive Mn dopants doped on ZnO nanoparticles caused the strong UV-responsive due to the more 3d orbitals in the valence band.

  17. Synthesis of Mn-doped ZnS architectures in ternary solution and their optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xinjuan, E-mail: wangxj@hnu.edu.cn [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Zhang Qinglin [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Zou Bingsuo, E-mail: zoubs@bit.edu.cn [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China); Micro-nano Technology Center and School of MSE, BIT, Beijing 100081 (China); Lei Aihua; Ren Pinyun [State Key lab of CBSC, Micronano Research Center, Hunan University, Changsha 410082 (China)

    2011-10-01

    Mn-doped ZnS sea urchin-like architectures were fabricated by a one-pot solvothermal route in a ternary solution made of ethylenediamine, ethanolamine and distilled water. The as-prepared products were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and photoluminescence spectra (PL). It was demonstrated that the as-prepared sea urchin-like architectures with diameter of 0.5-1.5 {mu}m were composed of nanorods, possessing a wurtzite structures. The preferred growth orientation of nanorods was found to be the [0 0 2] direction. The PL spectra of the Mn-doped ZnS sea urchin-like architectures show a strong orange emission at 587 nm, indicating the successful doping of Mn{sup 2+} ions into ZnS host. Ethanolamine played the role of oriented-assembly agent in the formation of sea urchin-like architectures. A possible growth mechanism was proposed to explain the formation of sea urchin-like architectures.

  18. Synthesis of Mn-doped ZnS architectures in ternary solution and their optical properties

    International Nuclear Information System (INIS)

    Wang Xinjuan; Zhang Qinglin; Zou Bingsuo; Lei Aihua; Ren Pinyun

    2011-01-01

    Mn-doped ZnS sea urchin-like architectures were fabricated by a one-pot solvothermal route in a ternary solution made of ethylenediamine, ethanolamine and distilled water. The as-prepared products were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and photoluminescence spectra (PL). It was demonstrated that the as-prepared sea urchin-like architectures with diameter of 0.5-1.5 μm were composed of nanorods, possessing a wurtzite structures. The preferred growth orientation of nanorods was found to be the [0 0 2] direction. The PL spectra of the Mn-doped ZnS sea urchin-like architectures show a strong orange emission at 587 nm, indicating the successful doping of Mn 2+ ions into ZnS host. Ethanolamine played the role of oriented-assembly agent in the formation of sea urchin-like architectures. A possible growth mechanism was proposed to explain the formation of sea urchin-like architectures.

  19. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

    2016-01-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  20. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

    2016-03-07

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  1. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Science.gov (United States)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2017-11-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1-x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  2. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  3. Determination of atropine using Mn-doped ZnS quantum dots as novel luminescent sensitizers

    Energy Technology Data Exchange (ETDEWEB)

    Azizi, Seyed Naser [Analytical Division, Faculty of Chemistry, University of Mazandaran, Babolsar 4741695447 (Iran, Islamic Republic of); Chaichi, Mohammad Javad, E-mail: jchaichi@yahoo.com [Analytical Division, Faculty of Chemistry, University of Mazandaran, Babolsar 4741695447 (Iran, Islamic Republic of); Shakeri, Parmis [Analytical Division, Faculty of Chemistry, University of Mazandaran, Babolsar 4741695447 (Iran, Islamic Republic of); Bekhradnia, Ahmadreza [Pharmaceutical Sciences Research Center, Department of Medicinal Chemistry, Mazandaran University of Medical Sciences, Sari (Iran, Islamic Republic of)

    2013-12-15

    A novel chemiluminescence (CL) method using water-soluble Mn-doped ZnS quantum dots (QDs) as sensitizers is proposed for the chemiluminometric determination of atropine in pharmaceutical formulation. Water-soluble Mn-doped ZnS QDs were synthesized by using L-cysteine as stabilizer in aqueous solutions. The nanoparticles were structurally and optically characterized by X-ray powder diffraction (XRD), dynamic light scattering (DLS), Fourier transform infrared spectroscopy (FTIR), UV–vis absorption spectroscopy and photoluminescence (PL) emission spectroscopy. It was found that ZnS quantum dots acted as enhancers of the weak CL emission produced upon oxidation of sulfite by Ce(IV) in acidic medium. Trace amounts of atropine improved the sensitize effect of ZnS quantum dots yielding a significant chemiluminescence enhancement of the Ce(IV)–SO{sub 3}{sup 2−}–ZnS QD system. Therefore, a new CL analysis system was developed for the determination of atropine. Under the optimum conditions, there is a good linear relationship between the relative chemiluminescence intensity and the concentration of atropine in the range of 1×10{sup −9}–1×10{sup −6} M of atropine with a correlation coefficient (R{sup 2}) of 0.9992. The limit of detection of this system was found to be 2.54×10{sup −10} M. This method is not only simple, sensitive and low cost, but also reliable for practical applications. -- Highlights: • Mn-doped ZnS quantum dots could enhance the chemiluminescence (CL) of cerium(IV)–sodium sulfite system. • ZnS quantum dots were used as the nanocatalyst. • Trace amounts of atropine improved the sensitize effect of ZnS quantum dots. • This work is introduced as a new method for the determination of atropine commercial drugs. • Detection limit of atropine was obtained 2.54×10{sup −10} mol L{sup −1}.

  4. Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

    Science.gov (United States)

    Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

    2014-05-01

    A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

  5. Structural, Raman, and dielectric studies on multiferroic Mn-doped Bi 1-xLax FeO 3 ceramics

    KAUST Repository

    Xing, Zhibiao

    2014-04-03

    Multiferroic Bi1-xLaxFeO3 [BLFO (x)] ceramics with x = 0.10-0.50 and Mn-doped BLFO (x = 0.30) ceramics with different doping contents (0.1-1.0 mol%) were prepared by solid-state reaction method. They were crystallized in a perovskite phase with rhombohedral symmetry. In the BLFO (x) system, a composition (x)-driven structural transformation (R3c→C222) was observed at x = 0.30. The formation of Bi2Fe 4O9 impure phase was effectively suppressed with increasing the x value, and the rhombohedral distortion in the BLFO ceramics was decreased, leading to some Raman active modes disappeared. A significant red frequency shift (~13 cm-1) of the Raman mode of 232 cm-1 in the BLFO ceramics was observed, which strongly perceived a significant destabilization in the octahedral oxygen chains, and in turn affected the local FeO6 octahedral environment. In the Mn-doped BLFO (x = 0.30) ceramics, the intensity of the Raman mode near 628 cm-1 was increased with increasing the Mn-doping content, which was resulted from an enhanced local Jahn-Teller distortions of the (Mn,Fe)O6 octahedra. Electron microscopy images revealed some changes in the ceramic grain sizes and their morphologies in the Mn-doped samples at different contents. Wedge-shaped 71° ferroelectric domains with domain walls lying on the {110} planes were observed in the BLFO (x = 0.30) ceramics, whereas in the 1.0 mol% Mn-doped BLFO (x = 0.30) samples, 71° ferroelectric domains exhibited a parallel band-shaped morphology with average domain width of 95 nm. Dielectric studies revealed that high dielectric loss of the BLFO (x = 0.30) ceramics was drastically reduced from 0.8 to 0.01 (measured @ 104 Hz) via 1.0 mol% Mn-doping. The underlying mechanisms can be understood by a charge disproportion between the Mn4+ and Fe2+ in the Mn-doped samples, where a reaction of Mn4+ + Fe2+→Mn3+ + Fe3+ is taken place, resulting in the reduction in the oxygen vacancies and a suppression of the electron hopping from Fe3+ to Fe2+ ions

  6. Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

    Science.gov (United States)

    Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

    1993-01-01

    A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

  7. Mn-Doping in NiO Nanoparticles: Defects-Modifications and Associated Effects Investigated Through Positron Annihilation Spectroscopy.

    Science.gov (United States)

    Das, Anjan; Mandal, Atis Chandra; Roy, Soma; Nambissan, P M G

    2016-04-01

    Manganese-doped nickel oxide (Ni1-xMnxO) nanoparticulate samples with x in the range 0 (undoped sample) to 0.35 were synthesized by sol-gel method involving chemical reactions between the solutions of nickel nitrate hexahydrate and manganese acetate tetrahydrate. The nanocrystallites obtained after annealing of the precipitates for different durations were characterized by X-ray diffraction and high resolution transmission electron microscopy. The samples showed high degree of purity with no secondary phase up to 35 at.% (x = 0.35) of Mn-doping. At the initial doping concentrations, the crystallite sizes increased due to vacancy type defects being recombined with some of the doped Mn2+ ions. However, substitution-induced strain soon overtook the crystallite dynamics and the sizes rapidly started reducing again as an indirect consequence of the necessity to accommodate majority of the doped cations on the surfaces of the nanocrystallites. There was conspicuous changes in the lattice parameter too which could again be attributed to the strain and charge effects. The average sizes of the crystallites were obtained in the range 5.5 nm to 13.1 nm for the different samples. UV-Vis absorption studies indicated the formation of excitonic states in NiO on Mn-doping. The band gap energy (Eg) derived from the optical absorption spectra showed a continuous increase with increase of Mn-doping of the samples. Positron lifetime and Doppler broadening spectroscopic studies were carried out on those samples to characterize the vacancy type defects and defect clusters/complexes. There were also indications to suggest positron annihilation at the crystallite surfaces owing to their sizes of nanometer order. Positron lifetimes decreased upon increase of Mn-doping. The coincidence Doppler broadened ratio curves indicated definite shifts of the prominent oxygen-electron-annihilation peak and the variation of the lineshape parameter S also indicated clearly the effects of Mn-doping.

  8. Mn Doped AIZS/ZnS Nanocrystals: Synthesis and Optical Properties.

    Science.gov (United States)

    Chen, Siqi; Zaeimian, Masoumeh Saber; Monteiro, Jorge H S K; Zhao, Jialong; Mamalis, Athanasios G; de Bettencourt-Dias, Ana; Zhu, Xiaoshan

    2017-11-25

    In this work, Mn doped AIZS/ZnS (Mn:AIZS/ZnS) nanocrystals (NCs) have been synthesized in an approach using heat-up and drop-wise addition of precursors. On the basis of the characterization of these doped NCs on their optical properties and materials, it is found that: (1) as more Mn atoms are doped into NCs, the doped NCs present photoluminescence (PL) red-shift and quantum yield quenching; (2) the doped NCs possess a short PL lifetime in tens of microseconds and a long PL lifetime in hundreds of microseconds, and the short lived PL is more dominant than the long lived one; and (3) the doped NCs present a reversible PL thermal quenching in a range from room temperature to 170°C. Possible PL mechanisms of these NCs were discussed by analyzing their time-resolved PL spectra and thermal stability.

  9. Experimental and density functional study of Mn doped Bi2Te3 topological insulator

    Directory of Open Access Journals (Sweden)

    A. Ghasemi

    2016-12-01

    Full Text Available We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

  10. Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires

    KAUST Repository

    Deng, Rui

    2013-07-17

    Room temperature ferromagnetism was observed in Mn-doped zinc stannate (ZTO:Mn) nanowires, which were prepared by chemical vapor transport. Structural and magnetic properties and Mn chemical states of ZTO:Mn nanowires were investigated by X-ray diffraction, superconducting quantum interference device (SQUID) magnetometry and X-ray photoelectron spectroscopy. Manganese predominantly existed as Mn2+ and substituted for Zn (Mn Zn) in ZTO:Mn. This conclusion was supported by first-principles calculations. MnZn in ZTO:Mn had a lower formation energy than that of Mn substituted for Sn (MnSn). The nearest neighbor MnZn in ZTO stabilized ferromagnetic coupling. This observation supported the experimental results. © 2013 AIP Publishing LLC.

  11. Multicolor emission based on amorphous-to-crystalline phase transitions in nanostructured Mn-doped glass

    Science.gov (United States)

    Hoshino, Yoshinobu; Takahashi, Yoshihiro; Terakado, Nobuaki; Fujiwara, Takumi

    2017-12-01

    We fabricated glass-ceramics composed of emissive nanocrystals that show variation in photoluminescence coloration. The change in emission color is based on the amorphous-to-crystalline phase transformation in a Mn-containing zincogermanate glass. The transformation occurred at a 50 °C temperature range (538–588 °C), resulting in a change in photoluminescence color from orange to white to green. The color change is attributed to the co-crystallization of emissive nanophases and a change in the coordination state of Mn2+. Using laser-induced crystallization, we also achieved the space-selective arrangement of the different photoluminescence colors, indicating that photoluminescence coloration can be tuned in this Mn-doped glass.

  12. Crystal and electronic structure study of Mn doped wurtzite ZnO nanoparticles

    Directory of Open Access Journals (Sweden)

    O.M. Ozkendir

    2016-08-01

    Full Text Available The change in the crystal and electronic structure properties of wurtzite ZnO nanoparticles was studied according to Mn doping in the powder samples. The investigations were conducted by X-ray Absorption Fine Structure Spectroscopy (XAFS technique for the samples prepared with different heating and doping processes. Electronic analysis was carried out by the collected data from the X-ray Absorption Near-Edge Structure Spectroscopy (XANES measurements. Additional crystal structure properties were studied by Extended-XAFS (EXAFS analysis. Longer heating periods for the undoped wurtzite ZnO samples were determined to own stable crystal geometries. However, for some doped samples, the distortions in the crystal were observed as a result of the low doping amounts of Mn which was treated as an impurity. Besides, the changes in oxygen locations were determined to create defects and distortions in the samples.

  13. Nonthermal effects in photostimulated solid state reaction of Mn doped SrTiO3

    Science.gov (United States)

    Daraselia, D.; Japaridze, D.; Jibuti, Z.; Shengelaya, A.; Müller, K. A.

    2017-04-01

    The effect of a photostimulated solid state reaction was investigated in Mn doped SrTiO3 samples. Light irradiation was performed by either halogen or UV lamps in order to study the effect of the spectral composition, and the results were compared with samples prepared at the same temperatures in a conventional furnace. The obtained samples were studied by X-ray diffraction for structural characterization and by Electron Paramagnetic Resonance, which provides microscopic information about the local environment as well as the valence state of Mn ions. It was found that light irradiation significantly enhances the solid state reaction rate compared to synthesis in the conventional furnace. Moreover, it was observed that UV lamp irradiation is much more effective compared to halogen lamps. This indicates that the absorption of light with energy larger than the materials band gap plays an important role and points towards the nonthermal mechanism of the photostimulated solid state reaction.

  14. Effect of Electromechanical Properties in Mn-doped BaTiO3

    Science.gov (United States)

    Takenaka, Hiroyuki; Cohen, R. E.

    Experimental studies reported that Mn doping in BaTiO3 could improve their electromechanical properties. In addition, ageing process gives rise to a significant reversible strain effect. Performing density functional theory (DFT) calculations, we find that Mn dopant with oxygen vacancy induces local electric field of 20 MV/m in 2x2x2 (39 atom) supercell. In order to understand effects of the electromechanical properties from phenomenological point of view, we optimize electric enthalpies in Landau-Devonshire model, parametrized from DFT results, under applying electric fields. We show dielectric constant and piezoelectric coefficients from the optimized polarization paths. supported by ONR, the ERC Advanced Grant ToMCaT, and the Carnegie Institution for Science.

  15. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

    Science.gov (United States)

    Sapkota, Keshab R; Chen, Weimin; Maloney, F Scott; Poudyal, Uma; Wang, Wenyong

    2016-10-14

    We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

  16. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  17. The electronic structure and ferromagnetism of TM (TM=V, Cr, and Mn)-doped BN(5, 5) nanotube: A first-principles study

    International Nuclear Information System (INIS)

    He, K.H.; Zheng, G.; Chen, G.; Wan, M.; Ji, G.F.

    2008-01-01

    We study the electronic structure and ferromagnetism of V-, Cr-, and Mn-doped single-wall BN(5, 5) nanotube by using polarized spin calculations within first principles. The optimized structures show that the transition-metal atoms move outwards and the calculated electronic properties demonstrate that the isolated V-, Cr-, and Mn-doped BN(5, 5) nanotubes show half-metallicity. The total ferromagnetic moments are 2μ B , 3.02μ B , and 3.98μ B for V-, Cr-, and Mn-doped BN(5, 5), respectively. The study suggests that such transition-metal (TM)-doped nanotubes may be useful in spintronics and nanomagnets

  18. Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping

    Directory of Open Access Journals (Sweden)

    Hiroki Matsuo

    2015-12-01

    Full Text Available Electrical conduction properties of SrRuO3(SRO/BiFeO3(BFO/SRO and SRO/10% Mn-doped BFO(BFMO/SRO ferroelectric thin-film capacitors are investigated. The BFO capacitors exhibit a switchable diode effect accompanied by a conduction change from ohmic to space-charge-limited current with increasing external field. In contrast, the BFMO capacitors show only an ohmic conduction, arising from a considerable reduction in depletion layer width at the SRO/BFMO interfaces. These results suggest that the diode property can be tuned by Mn content in the BFO film. Our study opens the possibility of controlling the diode effect in BFO-based devices by a dilute Mn doping.

  19. Electrical conduction in γ-irradiated and unirradiated pure and Mn-doped MgAl2O4 spinel

    International Nuclear Information System (INIS)

    El-Bellihi, A.A.; Faried, T.M.; Omran, Z.A.M.; Mousa, M.A.

    1991-01-01

    The electrical conductivity of pure and Mn-doped MgAl 2 O 4 spinel was studied in nitrogen atmosphere as a function of temperature. The conduction process is explained by the motion of cation vacancies in each of γ-irradiated and unirradiated samples. The effect of γ-irradiation on the conductivity and activation energy was discussed. (author) 12 refs.; 1 fig.; 1 tab

  20. Selective Determination of Atropine Using poly Dopamine-Coated Molecularly Imprinted Mn-Doped ZnS Quantum Dots.

    Science.gov (United States)

    Abbasifar, Javad; Samadi-Maybodi, Abdolraouf

    2016-09-01

    In this study, a selective method for the determination of atropine in pharmaceutical formulations was proposed. L-cysteine capped Mn-doped ZnS quantum dots (QDs) were prepared in an in-situ method using sodium thiosulfate precursor and characterized by spectrofluorometer, Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM) and X-ray diffractometer (XRD). Dopamine hydrochloride was used as a precursor for preparation of poly dopamine-coated molecularly imprinted Mn-doped ZnS quantum dots. Finally, these prepared molecularly imprinted Mn-doped ZnS quantum dots were used for determination of atropine in pharmaceutical formulations. The obtained linear range for determination of atropine was in the range of 2 × 10(-8) - 7 × 10(-6) M, with a correlation coefficient (R(2)) of 0.9889; and the detection limit (S/N = 3) was 3.2 nM.

  1. Microstructural parameters and high third order nonlinear absorption characteristics of Mn-doped PbS/PVA nanocomposite films

    Science.gov (United States)

    Ramezanpour, B.; Mahmoudi Chenari, Hossein; Sadigh, M. Khadem

    2017-11-01

    In this work, undoped and Mn-doped PbS/PVA nanocomposite films have been successfully fabricated using the simple solution-casting method. Their crystalline structure was examined by X-ray powder diffraction (XRD). XRD pattern show the formation of cubic structure of PbS for Mn-doped PbS in PVA matrix. Microstructure parameters of Mn-doped PbS/PVA nanocomposite films were obtained through the size-strain plot (SSP) method. The thermal stability of the nanocomposite film was determined using Thermogravimetric analysis (TGA). Furthermore, Z-scan technique was used to investigate the optical nonlinearity of nanocomposite films by a continuous-wave laser irradiation at the wavelength of 655 nm. This experimental results show that undoped PbS/PVA nanocomposite films indicate high nonlinear absorption characteristics. Moreover, the nanocomposite films with easy preparation characteristics, high thermal stability and nonlinear absorption properties can be used as an active element in optics and photonic devices.

  2. Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

    2006-01-01

    The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

  3. High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

    International Nuclear Information System (INIS)

    Lioutas, Ch.B.; Frangis, N.; Soumelidis, S.; Chiussi, S.; Lopez, E.; Leon, B.

    2006-01-01

    PLIE was used for rapid crystallisation of a-SiGeC films deposited by LCVD on Si(1 0 0) substrates. HRTEM study of thin films grown with several laser energies shows that the combination of the two laser techniques gives an almost completely crystallised alloy, even for the lowest laser fluence. Island formation is observed below a certain threshold of fluence (about 450 mJ/cm 2 ). In the case of the lowest energy (100 mJ/cm 2 ) the material was partially crystallised (with the crystalline material being the predominant state), to a nanocrystalline alloy with a considerable amount of epitaxialy grown grains and with grain sizes of several tens of nanometers. Above the threshold of 450 mJ/cm 2 a rather smooth thin film is grown. The crystallisation is almost complete and the alloy is grown in an almost perfect epitaxial way

  4. Surface morphology and physical properties of partially melt textured Mn doped Bi-2223

    Directory of Open Access Journals (Sweden)

    Indu Verma

    2011-09-01

    Full Text Available The samples of Bi2Sr2Ca2Cu3-xMnxO10+δ (x = 0.0 to 0.30 were prepared by the standard solid-state reaction method. The phase identification characteristics of synthesized (HTSC materials were explored through powder X-ray diffractometer reveals that all the samples crystallize in orthorhombic structure with lattice parameters a = 5.4053 Å, b = 5.4110 Å and c = 37.0642 Å up to Mn concentration of x = 0.30. The critical temperature (Tc measured by standard four probe method has been found to depress from 108 K to 70 K as Mn content (x increases from 0.00 to 0.30. The effects of sintering temperature on the surface morphology of Bi2Sr2Ca2Cu3-xMnxO10+δ have also been investigated. The surface morphology investigated through scanning electron microscope and atomic force microscopy (SEM & AFM results that voids are decreasing but grains size increases as the Mn concentration increases besides, nanosphere like structures on the surface of the Mn doped Bi2Sr2Ca2Cu3-xMnxO10+δ (Bi-2223 samples.

  5. Shift in optical properties of Mn doped CdS (A DFT+U study)

    Science.gov (United States)

    khan, M. Junaid Iqbal; Kanwal, Zarfishan; Nauman Usmani, M.

    2018-01-01

    Current study is based on PBE-GGA and GGA+U computational approach for calculating optical properties of Mn doped CdS. Cd atom in host CdS lattice (rocksalt structure) are substituted with Mn at various lattice positions and shift in optical properties is observed by increasing supercell size by employing PBE-GGA and Hubbard term. Optical properties vary with changing supercell size and show significant change for GGA+U. Blue shift in absorption spectrum and plots for PDOS, TDOS are in accordance with existing reported work. Moreover strong p-d hybridization is observed due to Mn and S orbital interactions and localization of d-states are scrutinized in vicinity of Fermi level or conduction band minima. GGA+U absorption curve shows redshift and a tremendous change in optical properties is observed due to different bonding. Doping Mn into CdS host lattice illustrates enhancement in Opto-electrical properties which maximizes CdS:Mn system scope in optoelectronic devices.

  6. Fluorescence sensing of biological tissue structures using Mn-doped CdS nanoparticles as biomarkers

    Science.gov (United States)

    Fediv, Volodymyr I.; Savchuk, Andriy I.; Rudko, Galyna Yu.; Davydenko, Igor S.; Savchuk, Tetyana A.; Gule, Evgeniy G.; Ivanchak, Svitlana A.

    2009-10-01

    The present paper describes the growth, absorption and photoluminescence spectra of Mn-doped cadmium sulfide nanoparticles, and application of nanoparticles for cellular imaging. Formation of CTAB-coated CdS:Mn nanoparticles is monitored by optical methods. The optical absorption edge of CdS:Mn nanoparticles is shifted to the higher-energy side as compared to bulk crystals due to the quantum confinement effect. TEM images demonstrate that the average size of CdS:Mn nanoparticles embedded into gelatin matrix is larger than the one of CTAB-coated nanoparticles. The changes of the optical density during the process of the nanoparticles growth are attributed to the increase of their density in the solution. The effects of coverage layer in the PL properties nanosensors are studied by the photoluminescence method. Interactions between CdS:Mn NPs and organic molecules are probed by photoluminescence method, and the results obtained are used for identification of the Kupffer's cells in the histologic specimens of liver.

  7. Influence of Mn doping on ZnO defect-related emission

    Directory of Open Access Journals (Sweden)

    T.R. Stara

    2017-04-01

    Full Text Available Defect related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration NMn was varied from 1019 to 1021 cm–3.The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing the Mn content. Photoluminescence (PL spectra of prepared samples were measured at room temperature and analyzed by Gaussian fitting. PL of undoped ceramics exhibited itself as intense broad band peaking at about 550 nm. Two effects were shown to occur as a result of Mn doping: i drastic quenching of self-activated PL accompanied by gradual red-shift of spectral boundary of the quenching with increasing the Mn content; ii appearance of a new emission band peaking at 645 nm that becomes dominant in the PL spectrum at NMn = 1020 cm–3. The observed effects were believed to be due to re-absorption of self-activated ZnO emission by Mn-related centers. The following recombination in excited centers was supposed to occur by both radiative and nonradiative ways, the former being responsible for 645 nm PL band.

  8. Negative magnetization induced by Mn doping in YCrO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Li, C.L. [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Huang, S. [Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018 (China); Li, X.X.; Zhu, C.M.; Zerihun, G.; Yin, C.Y. [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu, C.L., E-mail: cllu@hust.edu.cn [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yuan, S.L., E-mail: yuansl@hust.edu.cn [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2017-06-15

    Highlights: • Negative magnetization is firstly observed in Mn doped YCrO{sub 3} ceramics. • The phenomenon is originated from the antiferromagnetic coupling of three different interactions. • The increase of magnetization for samples is attributed to the ferromagnetic exchange interaction between Cr{sup 3+} and Mn{sup 3+}. - Abstract: A series of ceramic samples YCr{sub 1−x}Mn{sub x}O{sub 3} (0.15 ⩽ x ⩽ 0.4) with orthorhombic phase were prepared by a modified Pechini method, the structure and magnetic properties were studied in details. Our experiments revealed remarkable negative magnetization induced by the competition among multiple exchange interactions. The negative magnetization is result from the antiferromagnetic coupling of weak ferromagnetic moments of Mn{sup 3+}–Mn{sup 3+} and Cr{sup 3+}–Cr{sup 3+} with that of Cr{sup 3+}–Mn{sup 3+} interactions. And the strength of the magnetization is closely related to the temperature, magnetic field and the value of x. Below the compensation temperature, the absolute of negative magnetization firstly increases and then decreases with the increase of x, which is correlated with the weakening of Cr{sup 3+}–Cr{sup 3+} interaction and the enhancement of Mn{sup 3+}–Mn{sup 3+} interaction. The increase of magnetization obtained from the hysteresis loops is attributed to the ferromagnetic exchange interaction between Cr{sup 3+} and Mn{sup 3+}. Moreover, the magnetic switching by only changing the magnetic field strength and both normal and inverse magnetocaloric effects were demonstrated.

  9. Interface Engineering of Mn-Doped ZnSe-Based Core/Shell Nanowires for Tunable Host-Dopant Coupling.

    Science.gov (United States)

    Li, Zhi-Jun; Hofman, Elan; Blaker, Amanda; Davis, Andrew Hunter; Dzikovski, Boris; Ma, De-Kun; Zheng, Weiwei

    2017-12-26

    Transition metal ion doped one-dimensional (1-D) nanocrystals (NCs) have advantages of larger absorption cross sections and polarized absorption and emissions in comparison to 0-D NCs. However, direct synthesis of doped 1-D nanorods (NRs) or nanowires (NWs) has proven challenging. In this study, we report the synthesis of 1-D Mn-doped ZnSe NWs using a colloidal hot-injection method and shell passivation for core/shell NWs with tunable optical properties. Experimental results show optical properties of the NWs are controlled by the composition and thickness of the shell lattice. It was found that both the host-Mn energy transfer and Mn-Mn coupling are strongly dependent on the type of alloy at the interface of doped core/shell NWs. For Mn-doped type I ZnSe/ZnS core/shell NWs, the ZnS shell passivation can enhance florescence quantum yield with little effect on the location of the incorporated Mn dopant due to the identical cationic Zn 2+ site available for Mn dopants throughout the core/shell NWs. However, for Mn-doped quasi type II ZnSe/CdS NWs and ZnSe/CdS/ZnS core/shell NWs, the cation alloying (Zn 1-x Cd x S(e)) can lead to metal dopant migration from the core to the alloyed interface and tunable host-dopant energy transfer efficiencies and Mn-Mn coupling. As a result, a tunable dual-band emission can be achieved for the doped NWs with the cation-alloyed interface. The interfacial alloying mediated energy transfer and Mn-Mn coupling provides a method to control the optical properties of the doped 1-D core/shell NWs.

  10. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-xNanowires.

    Science.gov (United States)

    Wen, Feng; Tutuc, Emanuel

    2018-01-10

    We report the growth and characterization of epitaxial, coherently strained Si x Ge 1-x -Si core-shell nanowire heterostructure through vapor-liquid-solid growth mechanism for the Si x Ge 1-x core, followed by an in situ ultrahigh-vacuum chemical vapor deposition for the Si shell. Raman spectra acquired from individual nanowire reveal the Si-Si, Si-Ge, and Ge-Ge modes of the Si x Ge 1-x core and the Si-Si mode of the shell. Because of the compressive (tensile) strain induced by lattice mismatch, the core (shell) Raman modes are blue (red) shifted compared to those of unstrained bare Si x Ge 1-x (Si) nanowires, in good agreement with values calculated using continuum elasticity model coupled with lattice dynamic theory. A large tensile strain of up to 2.3% is achieved in the Si shell, which is expected to provide quantum confinement for electrons due to a positive core-to-shell conduction band offset. We demonstrate n-type metal-oxide-semiconductor field-effect transistors using Si x Ge 1-x -Si core-shell nanowires as channel and observe a 40% enhancement of the average electron mobility compared to control devices using Si nanowires due to an increased electron mobility in the tensile-strained Si shell.

  11. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

    International Nuclear Information System (INIS)

    Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

  12. Magnetic and structural properties of Mn-doped Bi.sub.2./sub.Se.sub.3./sub. topological insulators

    Czech Academy of Sciences Publication Activity Database

    Tarasenko, R.; Vališka, M.; Vondráček, Martin; Horáková, Kateřina; Tkáč, V.; Carva, K.; Baláž, P.; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, Jan

    2016-01-01

    Roč. 481, Jan (2016), 262-267 ISSN 0378-4363 R&D Projects: GA ČR(CZ) GA14-30062S; GA MŠk LO1409; GA MŠk(CZ) LM2011029 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * Mn-doped Bi 2 Se 3 * X-ray diffraction * X-ray photoemission * spectroscopy * ferromagnetism Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya.; Dubinov, A. A.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru [Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Baidus, N. V.; Samartsev, I. V. [Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Fefelov, A. G. [FGUE “Salut,” 603950 Nizhny Novgorod (Russian Federation); Nekorkin, S. M. [Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation); Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Pavlov, D. A.; Sushkov, A. A. [Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Skorokhodov, E. V.; Shaleev, M. V.; Yablonskiy, A. N.; Yunin, P. A. [Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)

    2016-08-08

    We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

  14. Efficiency Enhanced Colloidal Mn-Doped Type II Core/Shell ZnSe/CdS Quantum Dot Sensitized Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    A. Jamshidi

    2015-01-01

    Full Text Available Colloidal Mn-doped ZnSe/CdS core/shell quantum dots (QDs are synthesized for the first time and employed as a strategy to boost the power conversion efficiency of quantum dot sensitized solar cells. By using Mn-doping as a band gap engineering tool for core/shell QDs an effective improvement of absorption spectra could be obtained. The mid-states generated by a proper Mn content alleviate carrier separation and enhance the electron injection rate, thus facilitating electron transport to the TiO2 substrate. It is demonstrated that a device constructed with 0.25% Mn-doped ZnSe/CdS leads to an enhancement of the electron injection rate and power conversion efficiency by 4 times and 1.3, respectively.

  15. Room temperature ferromagnetism in undoped and Mn doped CdO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sumeet [Department of Physics, Motilal Nehru National Institute of Technology Allahabad, 211004 (India); Layek, Samar [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India); Yashpal, Madhu [Electron Microscope Facility Department of Anatomy Institute of Medical Sciences, Banaras Hindu University, Varanasi 221005 (India); Ojha, Animesh K., E-mail: animesh198@gmail.com [Department of Physics, Motilal Nehru National Institute of Technology Allahabad, 211004 (India)

    2015-11-01

    Cd{sub 1−x}Mn{sub x}O (x=00–0.07) nanostructures were synthesized and their structural, optical and magnetic properties were investigated. The shift of diffraction peaks towards lower angle side with increase of Mn content indicates the incorporation of Mn{sup 2+} ions into the CdO lattice. The values of optical band gaps were calculated at each value of Mn concentration. The values of band gap were increased by increasing the Mn concentrations as a direct consequence of the quantum confinement effect. The undoped CdO [Cd{sub 1−x}Mn{sub x}O (x=0.00)] nanostructure shows weak ferromagnetic nature at room temperature. The ferromagnetic nature increases consistently with increase of Mn concentrations from x=0.01 to 0.05 and then slightly drops for x=0.07. As there were no magnetic impurities present in the samples, we assume that the origin of ferromagnetism in the undoped CdO nanostructures could be due to formation of CdO structure in triplet state (S=1). However, the consistent increase of magnetic nature with Mn doped (x=0.01–0.05) CdO nanostructures might be attributed to the ferromagnetic coupling between the spins and enhancement of spin concentrations due to entering of Mn atom into the lattice. The sudden drop of ferromagnetic nature at x=0.07 may be due to the presence of anti-ferromagnetic coupling. - Highlights: • Simple synthesis method is used to synthesize Cd{sub 1−x}Mn{sub x}O nanostructures. • The optical band gap of Cd{sub 1−x}Mn{sub x}O nanostructures is calculated. • Cd{sub 1−x}Mn{sub x}O (x=0) nanostructure shows weak RTFM. • The RTFM of Cd{sub 1−x}Mn{sub x}O (x=0) is explained by a model based on electronic distribution. • The RTFM nature of Cd{sub 1−x}Mn{sub x}O is increased consistently from x=0.01 to 0.05.

  16. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.

    2016-04-01

    We demonstrate the fabrication and electrical characterization of Ω -gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor-liquid-solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at VDS = -0.5 V and VGS = -3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane's Band-to-Band Tunneling model.

  17. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  18. Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Seña, N.; Dussan, A. [Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá (Colombia); Mesa, F. [Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá (Colombia); Castaño, E.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

    2016-08-07

    We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

  19. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

  20. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

    Science.gov (United States)

    Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

    2018-04-01

    InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

  1. Effect of Reaction Parameters on Morphology and Photoluminescence of Intrinsic and Mn-doped ZnS Microspheres Synthesized by Hydrothermal Method

    Science.gov (United States)

    Chanu, T. Inakhunbi; Samanta, Dhrubajyoti; Tiwari, Archana; Chatterjee, Somenath

    2017-11-01

    Intrinsic and Manganese (Mn)-doped ZnS microspheres have been synthesized by hydrothermal method. Thiourea and amino acid, and uc(l)-histidine have been used as sulfur source and capping agent, respectively. The synthesized materials have been characterized using x-ray diffraction, field emission scanning electron microscopy, photoluminescence (PL) and UV-Vis spectroscopy. The above-said characterizations conveyed the information regarding the crystallinity, existence of microspheres, size and optical properties of synthesized ZnS and Mn-doped ZnS samples. Formation of microspheres of intrinsic and Mn-doped ZnS has been observed when the reaction parameters are kept at 150 °C for 4 h, and similarly, the micropores have been noticed when reaction parameters are kept at 150 °C for 8 h. The PL of ZnS microspheres shows multiple defect emissions. The nature of PL for pure ZnS has been regulated based on reaction parameters. Doping of Mn in the ZnS enhances the PL emission. This study reveals the role of reaction parameters and effect of Mn doping on tuning the morphology and emission behavior of ZnS microspheres.

  2. Orientation-dependent low field magnetic anomalies and room-temperature spintronic material – Mn doped ZnO films by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Nkosi, SS

    2013-12-01

    Full Text Available High quality un-doped and Mn-doped ZnO films deposited by a simple aerosol spray pyrolysis technique for 20 and 30 min were studied using electron paramagnetic resonance (EPR), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques...

  3. Optical properties and toxicity of undoped and Mn-doped ZnS semiconductor nanoparticles synthesized through the aqueous route

    Science.gov (United States)

    Labiadh, Houcine; Sellami, Badreddine; Khazri, Abdelhafidh; Saidani, Wiem; Khemais, Said

    2017-02-01

    Undoped and Mn-doped ZnS nanoparticles were synthesized at 95 °C in basic aqueous solution using the nucleation-doping strategy. Various samples of the Mn:ZnS NPs with 5, 10 and 20% of Mn dopant have been prepared and characterized using X-ray diffraction, energy-dispersive X-ray analysis, high resolution electron microscopy and photoluminescence (PL) measurements. When increasing the concentration of manganese Mn, the photoluminescence intensity gradually decreases. The PL spectra of the Mn-doped ZnS nanoparticles at room temperature exhibit both, the 450 nm blue defect-related emission and the 592 nm orange Mn2+ emission. It is vital to obtain NPs that meet the application requirements, however their environmental toxicity needs to be investigated. In this study, the induction of oxidative stress within the digestive gland of the Ruditapes decussatus organism (clam) is described. Antioxidant enzyme activities (superoxide dismutase (SOD) and catalase (CAT)) as well as malondialdehyde (MDA) levels have been determined in the digestive gland after exposure to 100 μg/L of ZnS, ZnS:Mn (5%), ZnS:Mn (10%) and ZnS:Mn (20%). The nanomaterials studied exhibit different responses in the digestive gland. Undoped Mn-ZnS has no effect on the markers considered, showing the limited interaction between this nanoparticle and the cells of the test organisms. In contrast, Mn-doped ZnS increases the activities of SOD and CAT and the level of MDA species, although this toxicity is highly dependent on the chemical properties of the material. These findings provide ideas for future considerations of ZnS nanoparticles, as well as information on the interaction between these materials and an aquatic environment. These data are the first evidence available of the formation of ZnS NPs using aqueous method and are an indication of the importance of knowing the biological target of the NPs when testing their potential impact on environmental model organisms.

  4. Inhibition of Neuroblastoma cancer cells viability by ferromagnetic Mn doped CeO{sub 2} monodisperse nanoparticles mediated through reactive oxygen species

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, Fazal; Jan, Tariq [Laboratory of Nanoscience and Technology (LNT), Department of Physics, International Islamic University Islamabad (Pakistan); Iqbal, Javed, E-mail: javed.saggu@iiu.edu.pk [Laboratory of Nanoscience and Technology (LNT), Department of Physics, International Islamic University Islamabad (Pakistan); Haider Naqvi, M. Sajjad [Department of Biochemistry, University of Karachi, Karachi (Pakistan); Ahmad, Ishaq [Experimental Physics Labs, National Center for Physics, Islamabad (Pakistan)

    2016-04-15

    Here we report the Mn doping induced effects on structural, Raman, optical, magnetic and anticancer properties of CeO{sub 2} nanoparticles prepared via soft chemical route. Structural and microstructural results infer that the synthesized nanoparticles have single phase cubic fluorite structure of CeO{sub 2} and that Mn doping results in enhancement of the structural defects. Scanning electron microscopy results reveal the formation of monodisperse nanoparticles having average particle size ranging from 30 to 41 nm. The optical absorbance spectroscopy analysis discloses the band gap energy tailoring of CeO{sub 2} nanoparticles via Mn doping. Room temperature ferromagnetism (RTFM) has been found in both as-prepared and Mn doped CeO{sub 2} nanoparticles. This RTFM of the synthesized nanoparticles have been attributed to the Mn ions and surface defects such as oxygen vacancies. Finally, the influence of Mn dopant on the cell viability and reactive oxygen species (ROS) generation levels of CeO{sub 2} nanoparticles in the presence of healthy and cancerous cells have been studied. It has been observed that the differential cytotoxicity of the synthesized nanoparticles is strongly correlated with level of ROS generation. - Highlights: • Mn doped CeO{sub 2} nanoparticles with cubic fluorite structure were synthesized. • Mn dopant significantly tailored the band gap of CeO{sub 2} nanoparticles. • The synthesized nanoparticles exhibited room temperature ferromagnetic behavior. • The cytotoxicity of these nanoparticles was reported for the first time. • The synthesized nanoparticles exhibited differential cytotoxicity.

  5. Effect of Mn doping on structural, optical and photocatalytic behaviors of hydrothermal Zn{sub 1−x}Mn{sub x}S nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nasser, Ramzi [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux (Tunisia); Department of Physics, Sciences Faculty of Tunis, University of Tunis El Manar (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux (Tunisia)

    2015-10-01

    Highlights: • ZnS nanocrystals doped with Mn{sup 2+} were synthesized from hydrothermal method. • Structural behaviors are analyzed from XRD, Raman and PL measurements. • We report on long PL lifetimes of Mn levels due to excitation transfer from ZnS. • High photocatalytic efficiency was reported for ZnS-doped 3%Mn. - Abstract: Undoped and Mn-doped ZnS nanocrystals (Ncs) have been synthesized by using the hydrothermal method at 200 °C. X-ray diffraction (XRD) patterns revealed that the synthesized Ncs have cubic zinc blende structure. Typical SEM images show that undoped and Mn-doped ZnS Ncs are agglomerated in microspheres. Raman spectra informed that the Mn doping has improved the crystallinity of the ZnS Ncs up to the concentration 3%. The optical properties of Mn-doped ZnS Ncs were studied through UV–vis diffuse reflection spectroscopy, photoluminescence (PL), PL decay and PL excitation (PLE) measurements. The optical band gap was found to decrease from 3.59 to 3.35 eV with increasing the Mn doping concentration. PL spectra demonstrate clearly that Mn{sup 2+} ions reduce the density of defect in both ZnS lattice and surface. An efficient excitation transfer from the ZnS host to Mn{sup 2+} ions is evidenced from PL decays. ZnS:Mn Ncs were found to be good photocatalyst for sunlight degradation of Rhodamine B. The optimum Mn dopant concentration was 3%, above which photocatalytic activity decreased. The degradation reaction obeyed pseudo-first-order kinetics.

  6. Protein-directed synthesis of Mn-doped ZnS quantum dots: a dual-channel biosensor for two proteins.

    Science.gov (United States)

    Wu, Peng; Zhao, Ting; Tian, Yunfei; Wu, Lan; Hou, Xiandeng

    2013-06-03

    Proteins typically have nanoscale dimensions and multiple binding sites with inorganic ions, which facilitates the templated synthesis of nanoparticles to yield nanoparticle-protein hybrids with tailored functionality, water solubility, and tunable frameworks with well-defined structure. In this work, we report a protein-templated synthesis of Mn-doped ZnS quantum dots (QDs) by exploring bovine serum albumin (BSA) as the template. The obtained Mn-doped ZnS QDs give phosphorescence emission centered at 590 nm, with a decay time of about 1.9 ms. A dual-channel sensing system for two different proteins was developed through integration of the optical responses (phosphorescence emission and resonant light scattering (RLS)) of Mn-doped ZnS QDs and recognition of them by surface BSA phosphorescent sensing of trypsin and RLS sensing of lysozyme. Trypsin can digest BSA and remove BSA from the surface of Mn-doped ZnS QDs, thus quenching the phosphorescence of QDs, whereas lysozyme can assemble with BSA to lead to aggregation of QDs and enhanced RLS intensity. The detection limits for trypsin and lysozyme were 40 and 3 nM, respectively. The selectivity of the respective channel for trypsin and lysozyme was evaluated with a series of other proteins. Unlike other protein sensors based on nanobioconjugates, the proposed dual-channel sensor employs only one type of QDs but can detect two different proteins. Further, we found the RLS of QDs can also be useful for studying the BSA-lysozyme binding stoichiometry, which has not been reported in the literature. These successful biosensor applications clearly demonstrate that BSA not only serves as a template for growth of Mn-doped ZnS QDs, but also impacts the QDs for selective recognition of analyte proteins. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Glycopolypeptide-encapsulated Mn-doped ZnS quantum dots for drug delivery: fabrication, characterization, and in vitro assessment.

    Science.gov (United States)

    Xu, Zhigang; Li, Bo; Tang, Wanjin; Chen, Tong; Zhang, Haixia; Wang, Qin

    2011-11-01

    In this work, glycopolypeptide nanoparticles (GPNPs) composed of Mn doped ZnS quantum dots (QDs) as core and glycopolypeptides as shell were synthesized through the surface initiated polymerization of N-carboxyanhydrides and surface condensation polymerization with carboxymethyldextran on amine-functionalized QDs. The loading and release behavior of ibuprofen on the GPNPs were investigated. The GPNPs exhibited not only high loading but also controlled release behavior. The cytotoxicity of the GPNPs was evaluated by incubating with HEK293T cell lines and they were shown to be of low cytotoxicity. They appear to be a very promising candidate for targeted drug delivery. Copyright © 2011 Elsevier B.V. All rights reserved.

  8. Ferromagnetic interactions in Mn-doped magnetic semiconductors Ga(As,P) and (Al,Ga)As

    Energy Technology Data Exchange (ETDEWEB)

    Maca, Frantisek; Kudrnovsky, Josef [Institute of Physics ASCR, Praha, Czech Republic (Czech Republic)

    2007-07-01

    The optimization of the host composition is one way for systematical theoretical search for new spintronic materials. In this contribution we study in detail the hole mediated ferromagnetism in Mn-doped Ga(As,P) and (Al,Ga)As. Mn incorporation in ternary hosts is investigated using ab initio electronic structure calculations based on the density functional theory. For a set of ordered ternary alloys we discuss the influence of lattice parameters as well as valence band off-set on the close neighbor exchange interactions. Our results predict an increase of Curie temperature for systems with larger amount of P, i.e. for materials with smaller lattice constant and with valence band edge closer to Mn d-states. For ternary alloys with a higher content of P also a reduced number of compensating impurities was predicted.

  9. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath

    2010-09-15

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  10. Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Li, H.; Chang, C.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2016-01-01

    We report an investigation on the absorption mechanism of a GeSn photodetector with 2.4% Sn composition in the active region. Responsivity is measured and absorption coefficient is calculated. Square root of absorption coefficient linearly depends on photon energy indicating an indirect transition. However, the absorption coefficient is found to be at least one order of magnitude higher than that of most other indirect materials, suggesting that the indirect optical absorption transition cannot be assisted only by phonon. Our analysis of absorption measurements by other groups on the same material system showed the values of absorption coefficient on the same order of magnitude. Our study reveals that the strong enhancement of absorption for the indirect optical transition is the result of alloy disorder from the incorporation of the much larger Sn atoms into the Ge lattice that are randomly distributed.

  11. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi

    2013-01-01

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The tra...

  12. Electronic structure and x-ray magnetic circular dichroism in Mn-doped topological insulators Bi2Se3 and Bi2Te3

    Science.gov (United States)

    Antonov, V. N.; Bekenov, L. V.; Uba, S.; Ernst, A.

    2017-12-01

    We studied the structural, electronic, and magnetic properties of Mn-doped topological insulators Bi2Se3 and Bi2Te3 within the density-functional theory (DFT) using the generalized gradient approximation (GGA) in the framework of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. The x-ray absorption spectra (XAS) and x-ray magnetic circular dichroism at the Mn K and L2 ,3 edges were investigated theoretically from first principles. The calculated results are in good agreement with experimental data. The complex fine structure of the Mn L2 ,3 XAS in Mn-doped Bi2Se3 and Bi2Te3 was found to be not compatible with a pure Mn3 + valency state. Its interpretation demands mixed valent states. The theoretically calculated x-ray emission spectra at the Mn K and L2 ,3 edges are also presented and analyzed.

  13. Optical tunability of magnetic polaron stability in single-Mn doped bulk GaAs and GaAs/AlGaAs quantum dots

    Science.gov (United States)

    Qu, Fanyao; Moura, Fábio Vieira; Alves, Fabrizio M.; Gargano, Ricardo

    2013-03-01

    Optical control of magnetic property of a magnetic polaron (MP) in Mn-doped bulk GaAs and GaAs/AlGaAs quantum dots (QDs) have been studied. We have developed basis optimization technique for the method of linear combination of atomic orbitals (LCAOs), which significantly improve the accuracy of the conventional LCAO calculation. We have demonstrated that a monochromatic, linearly polarized, intense pulsed laser field induces a collapse of the MP and an ionization of Mn-acceptor in Mn-doped GaAs materials due to a dichotomy of hole wave function. We find this optical tunability of MP stability can be adjusted by confinement introduced in GaAs QDs.

  14. Ultranarrow and widely tunable Mn2+-Induced photoluminescence from single Mn-doped nanocrystals of ZnS-CdS alloys.

    Science.gov (United States)

    Hazarika, Abhijit; Layek, Arunasish; De, Suman; Nag, Angshuman; Debnath, Saikat; Mahadevan, Priya; Chowdhury, Arindam; Sarma, D D

    2013-06-28

    Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence over a narrow energy window of width ≤150  meV in the orange-red region and a surprisingly large spectral width (≥180  meV), contrary to its presumed atomic-like origin. Carrying out emission measurements on individual single nanocrystals and supported by ab initio calculations, we show that Mn PL emission, in fact, can (i) vary over a much wider range (∼370  meV) covering the deep green--deep red region and (ii) exhibit widths substantially lower (∼60-75  meV) than reported so far, opening newer application possibilities and requiring a fundamental shift in our perception of the emission from Mn-doped semiconductor nanocrystals.

  15. Composites of surface imprinting polymer capped Mn-doped ZnS quantum dots for room-temperature phosphorescence probing of 2,4,5-trichlorophenol

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Xiao [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Zhiping, E-mail: weixiaokeyan@163.com [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Dai, Jiangdong [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Hao, Tongfan [School of Computer Science, Jilin Normal University, Siping 136000 (China); Li, Hongji; Xu, Yeqing; Gao, Lin; Pan, Jianming; Li, Chunxiang; Yan, Yongsheng [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2014-11-15

    In this paper, a simple procedure for the determination of 2,4,5-trichlorophenol (2,4,5-TCP) is reported. Mn-doped ZnS quantum dots (QDs) capped by molecularly imprinted polymers (MIPs) were prepared. MIPs were characterized by spectrofluorometer, UV–vis spectrophotometer, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscope (SEM). Meanwhile, spectrofluorometer was used to the evaluation of optical stability, the effect of pH, and the selective and sensitive determination of 2,4,5-TCP. Under optical conditions, MIPs-capped Mn-doped ZnS QDs were successfully applied to the detection of 2,4,5-TCP in water selectively and sensitively, and a linear relationship was obtained to cover the concentration range of 5.0–50 μmol L{sup −1} with a correlation coefficient of 0.9913. Moreover, 2,4,5-TCP could quench the room temperature phosphorescence of MIPs-capped Mn-doped ZnS QDs in a concentration-dependent manner, which was best described by a Stern–Volmer-type equation. - Highlights: • Molecularly imprinted polymers (MIPs)-capped Mn-doped ZnS quantum dots (QDs) were prepared. • The composite materials integrated the advantages of the high selectivity of the molecular imprinting and strong RTP property of the QDs. • The composite materials was successfully applied to selectively and sensitively detect 2,4,5-TCP in water.

  16. Examination of oxygen vacancy formation in Mn-doped CeO2 (111) using DFT+U and the hybrid functional HSE06.

    Science.gov (United States)

    Krcha, Matthew D; Janik, Michael J

    2013-08-13

    MnO(x)-CeO(x) mixed oxide systems exhibit interesting sulfur adsorption capacities and catalytic activity. We examined the electronic structure of Mn-doped fluorite CeO2 bulk solid and surface using density functional theory (DFT) with the Hubbard U term or the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. We specifically evaluate the reducibility and formation energies of Mn-doped CeO2 surfaces. The use of a U value on the d-states of Mn is examined, and a value of 4 eV is chosen based upon results from DFT+U calculations on bulk MnO(x),1 XANES characterization of oxidation states in calcined and reduced Mn-doped CeO2, and comparison with HSE06 hybrid functional results. Electronic structure impacts of the U inclusion are discussed. The concentration and orientation of Mn atoms doped into the surface of CeO2 have a great influence on the reducibility of the surface. Based upon formation energies, Mn will not favor doping into the surface of CeO2 in a fully oxidized system (Mn(4+)). Under reducing environments, Mn will dope into the surface with oxygen vacancies present (Mn(3+) and Mn(2+)). The first oxygen vacancy is not likely catalytically important in fluorite MnO(x)-CeO(x) systems as formation of the fully oxidized surface is not stable. A greater degree of reduction would occur during a catalyzed redox reaction.

  17. Phosphorescent Differential Sensing of Physiological Phosphates with Lanthanide Ions-Modified Mn-Doped ZnCdS Quantum Dots.

    Science.gov (United States)

    He, Hengwei; Li, Chenghui; Tian, Yunfei; Wu, Peng; Hou, Xiandeng

    2016-06-07

    Phosphates, both inorganic and organic, play fundamental roles in numerous biological and chemical processes. The biological functions of phosphates connect with each other, analysis of single phosphate-containing biomolecule therefore cannot reveal the exact biological significance of phosphates. Sensor array is therefore the best choice for differentiation analysis of physiological phosphates. Lanthanide ions possess high affinity toward physiological phosphates, while lanthanide ions can also efficiently quench the luminescence of quantum dots (QDs). Taking lanthanide ions as cartridges, here we proposed a sensor array for sensing of physiological phosphates based on lanthanide ions-modified Mn-doped ZnCdS phosphorescent QDs in the manner of indicator-displacement assay. A series of lanthanide ions were selected as quencher for phosphorescent QDs. Physiological phosphates could subsequently displace the quencher and recover the phosphorescence. Depending on their varied phosphorescence restoration, a sensor array was thus developed. The photophysics of phosphorescence quenching and restoration were studied in detail for better understanding the mechanism of the sensor array. The exact contribution of each sensor element to the sensor array was evaluated. Those sensor elements with little contribution to the differentiation analysis were removed for narrowing the size of the array. The proposed sensor array was successfully explored for probing nucleotide phosphates-involved enzymatic processes and their metabolites, simulated energy charge changes, and analysis of physiological phosphates in biological samples.

  18. First-principles study on hydrogen storage in Al-, Ca-, Mn-doped MgNi clusters

    Science.gov (United States)

    Ma, Wenqiang; Jing, Cuiyu

    2017-10-01

    Using a density functional approach calculation, the structural and electronic properties of Mg8Ni5, Mg8Ni4Al, Mg8Ni4Ca and Mg8Ni4Mn clusters are investigated. The Al-, Ca-, Mn-doping in MgNi clusters lengthen d(Mg-Ni), also increase the Mulliken charge, and improve magnetic moment on most shell atoms, so that the doping is helpful for hydrogen storage. The reaction heats of hydrogenation, the enthalpies of formation, the desorption energies show that the Mg8Ni4Mn, Mg8Ni5, Mg8Ni4Al clusters have a good property of hydrogen storage materials with relatively higher reaction heat of hydrogenation, and that their hydrides have a smaller desorption energy. So the Mg8Ni4M (M = Ni, Al, Ca, Mn) clusters are some preferred candidates of H storage. These results indicate the advantage of small size and suitable metal-doped MgNi clusters on hydrogenation and dehydrogenation.

  19. Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Sim/Gen)N superlattices

    International Nuclear Information System (INIS)

    Rahman, M. M.; Matada, H.; Tambo, T.; Tatsuyama, C.

    2001-01-01

    Short-period (Si m /Ge n ) N superlattices (SSLs) are grown step by step on a Si(001) substrates by solid source molecular beam epitaxy. Using the step-graded SSLs as buffer layers, 2000 Aa uniform Si 0.75 Ge 0.25 alloy layers are grown on the same substrates. The growth temperature of the SSLs and uniform layers is 500 degree C. In the SSLs layers, m and n are the number of monolayers of Si and Ge, respectively. N is the period of (Si m /Ge n ) bilayers. The samples grown are characterized by x-ray diffraction, atomic force microscopy (AFM), and transmission electron microscopy (TEM) as a function of the step number of SSL layers. The SSLs show very smooth surfaces [the root-mean-square (rms) surface roughness is between 7 and 12 Aa]. A dramatic decrease in roughness is observed in the uniform Si 0.75 Ge 0.25 alloy layers, when even a one-step SSL is used as a buffer layer. A noticeable increase in rms roughness is seen in both SSL and alloy layers when the number of Ge monolayers is changed from one to two. AFM observation shows that the rms surface roughness behavior of the SSLs is reflected to their corresponding top alloy layers. The residual strains in alloy layers are considerably lower, with a maximum relaxation rate of about 80% for the sample with a seven-step SSL buffer. Cross-sectional TEM images show that strained SSL buffer layers effectively deflect threading dislocations in the substrate or confine the dislocations in the SSL buffer layers. [copyright] 2001 American Institute of Physics

  20. Fabrication of SiGe/Ge core-shell nanowires by oxidation of SiGe

    OpenAIRE

    Kløw, Frode

    2011-01-01

    As Si technology is reaching its limits in solar cell and transistor applications, ways to improve these devices are being investigated. This study looks at the fabrication process of SiGe/Ge core-shell nanowires (NWs). Larger SiGe column structures can be oxidized to reduce their size and create a SiGe/Ge core-shell structure with a layer of SiO2 on the outside. Initially, SiGe dry oxidation was investigated in epitaxially grown SiGe films with 15% and 20% Ge, focusing on the Ge pileup r...

  1. Quick and enhanced degradation of bisphenol A by activation of potassium peroxymonosulfate to SO4rad - with Mn-doped BiFeO3 nanoparticles as a heterogeneous Fenton-like catalyst

    Science.gov (United States)

    Soltani, Tayyebeh; Tayyebi, Ahmad; Lee, Byeong-Kyu

    2018-05-01

    Mn-doped BiFeO3 magnetic nanoparticles (BFO MNPs), namely BiFe1-xMnxO3 (x = 0.05 and 0.10), were successfully synthesized using a simple and novel sol-gel method and then applied as a highly efficient peroxymonosulfate (KHSO5, PMS) activation catalyst for the fast degradation of bisphenol A (BPA) from aqueous solution. The strong PMS activation ability of 10% Mn-doped BFO MNPs without any metal leaching due to the simultaneous effects of iron and manganese ions in the production of radical sulfate (SO4rad -), caused complete BPA degradation in 15 min, which was much faster than that using combinations with H2O2. TOC was reduced to 33%, 23% and 13% by PMS activated with BFO, 5 and 10% Mn doped BFO, respectively, which are 2.1, 2.6 and 3.15-fold lower than that same nanoparticles activated with H2O2. The photocatalytic mechanism of BPA with the simultaneous effects of iron and manganese ions in Mn-doped BFO was explored. The addition of KBrO3 and NaNO3 salts into Mn-doped BFO/PMS system reduced the complete BPA degradation time to 10 min, whereas Na2CO3 and NaCl salt addition retarded it, because salt addition can generate radical species that are either more or less active than SO4rad -.

  2. Synthesis and characterization of novel molecularly imprinted polymer - coated Mn-doped ZnS quantum dots for specific fluorescent recognition of cocaine.

    Science.gov (United States)

    Chantada-Vázquez, María Pilar; Sánchez-González, Juan; Peña-Vázquez, Elena; Tabernero, María Jesús; Bermejo, Ana María; Bermejo-Barrera, Pilar; Moreda-Piñeiro, Antonio

    2016-01-15

    Mn-doped ZnS quantum dots (QDs) coated with a molecularly imprinted polymer (MIP) material selective toward cocaine and its metabolites have been prepared and applied to cocaine (COC) and metabolites assessment by spectrofluorimetry. Ultrasound irradiation (37kHz) was novelty used for performing the Mn-doped ZnS QDs synthesis as well as for preparing the QD based MIP-coated composite by precipitation polymerization (imprinting process). This fact allowed the synthesis to be accomplished in four hours. In addition, the use of ultrasound irradiation during MIP-QDs synthesis increased the homogeneity of the QDs size, and reduced nanoparticles agglomeration. MIP was synthesized using COC as a template molecule, ethylene dimethacrylate (EDMA) as a functional monomer, divinylbenzene (DVB) as a cross-linker, and 2,2'-azobisisobutyronitrile (AIBN) as an initiator. The fluorescence of MIP-coated QDs was quenched by the template (COC) and also by metabolites from COC such as benzoylecgonine (BZE), and ecgonine methyl ester (EME). Quenching was not observed when performing experiments with non-imprinted polymer (NIP)-coated QDs; and also, fluorescence quenching of MIP-coated QDs was not observed by other drugs of abuse and metabolites (heroin and cannabis abuse). This fact indicates that the prepared material recognize only COC (template) and metabolites. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. First-principles calculation study of electronic structures and magnetic properties of Mn-doped perovskite crystals for solar cell applications

    Science.gov (United States)

    Suzuki, Atsushi; Oku, Takeo

    2018-02-01

    The electronic structures and magnetic properties of manganese (Mn)-doped formamidinium lead halide perovskite compounds (FAPbI3, where FA = NH2CHNH2 +) were investigated for solar cell application. The effects of Mn doping into FAPbI3 crystals on electronic structures, chemical shifts in nuclear magnetic resonance, and optical absorption spectra were studied by first-principles calculation on the basis of the density functional theory. The electron density distribution of the 6p orbital was delocalized on an iodine atom at the highest occupied molecular orbital, and that of the 3d orbital was localized on a Mn atom at the lowest unoccupied molecular orbital. The absorption properties in the near-infrared region originated from the first excitation process of ligand-metal charge transfer (LMCT). The chemical shifts of I-NMR and the g-tensor of Mn ions were associated with nuclear quadrupole interactions based on an electron field gradient and asymmetry parameters. The combination of LMCT with magnetic interactions is important for developing photovoltaic solar cells with a broad-band optical absorption spectrum in the near-infrared region.

  4. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  5. MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.

    Science.gov (United States)

    Manna, S; Aluguri, R; Katiyar, A; Das, S; Laha, A; Osten, H J; Ray, S K

    2013-12-20

    Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si(1-x)Ge(x) quantum dots show better memory characteristics than single-layer Si quantum dots.

  6. Preparation of ZnGeP2 for Nonlinear Optical Applications: Melt and Homoepitaxial Vapor Growth, Properties of the Grown Crystals

    National Research Council Canada - National Science Library

    Gribenyukov, Alexander

    2004-01-01

    ... (transparency and damage threshold) determines the use of the material in nonlinear optics. It is known that for ZnGeP2 structural perfection is mainly determined by defects formed due to deviations from stoichiometry during synthesis and growth...

  7. Study of three dimensional germanium islands and ultrathin Si{sub x}Ge{sub 1-x} films grown by chemical vapour deposition on Si(111)-(7 x 7)

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, Selvi

    2005-07-15

    This work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin Si{sub x}Ge{sub 1-x} epitaxial growth by chemical vapour deposition on the Si(111)-(7 x 7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterisation of the CVD grown three dimensional germanium islands on a standard Si(111)-(7 x 7) substrate as well as on a surface modified Si(111)-(7 x 7) substrate. The characterisation was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin Si{sub x}Ge{sub 1-x} layers grown on the Si(111)-(7 x 7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models. (orig.)

  8. Enhancement of efficiency by embedding ZnS and Mn-doped ZnS nanoparticles in P3HT:PCBM hybrid solid state solar cells

    Science.gov (United States)

    Jabeen, Uzma; Adhikari, Tham; Shah, Syed Mujtaba; Nunzi, Jean-Michel; Badshah, Amin; Ahmad, Iqbal

    2017-06-01

    Zinc sulphide (ZnS) and Mn-doped ZnS nanoparticles were synthesized by wet chemical method. The synthesized nanoparticles were characterized by UV-visible, fluorescence, X-ray diffraction (XRD), fourier transform infra-red (FTIR) spectrometer, field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM). Scanning electron microscope (SEM) was used to find particle size while chemical composition of the synthesized materials was investigated by EDAX. UV-visible absorption spectrum of Mn-doped ZnS was slightly shifted to lower wavelength with respect to the un-doped zinc sulphide with decrease in the size of nanoparticles. Consequently, the band gap was tuned from 3.04 to 3.13 eV. The photoluminescence (PL) emission positioned at 597 nm was ascribed to 4T1 → 6A1 transition within the 3d shell of Mn2+. X-ray diffraction (XRD) analysis revealed that the synthesized nanomaterials existed in cubic crystalline state. The effect of embedding un-doped and doped ZnS nanoparticles in the active layer and changing the ratio of PCBM ([6, 6]-phenyl-C61-butyric acid methyl ester) to nanoparticles on the performance of hybrid solar cell was studied. The device with active layer consisting of poly(3-hexylthiophene) (P3HT), [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM), and un-doped ZnS nanoparticles combined in the ratio of (1:0.5:0.5) attained an efficiency of 2.42% which was found 71% higher than the reference device under the same conditions but not containing nanoparticles. Replacing ZnS nanoparticles with Mn-doped ZnS had a little effect on the enhancement of efficiency. The packing behavior and morphology of blend of nanoparticles with P3HT:PCBM were examined using atomic force microscope (AFM) and XRD. Contribution to the topical issue "Materials for Energy harvesting, conversion and storage II (ICOME 2016)", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  9. Single component Mn-doped perovskite-related CsPb2ClxBr5-x nanoplatelets with a record white light quantum yield of 49%: a new single layer color conversion material for light-emitting diodes.

    Science.gov (United States)

    Wu, Hao; Xu, Shuhong; Shao, Haibao; Li, Lang; Cui, Yiping; Wang, Chunlei

    2017-11-09

    Single component nanocrystals (NCs) with white fluorescence are promising single layer color conversion media for white light-emitting diodes (LED) because the undesirable changes of chromaticity coordinates for the mixture of blue, green and red emitting NCs can be avoided. However, their practical applications have been hindered by the relative low photoluminescence (PL) quantum yield (QY) for traditional semiconductor NCs. Though Mn-doped perovskite nanocube is a potential candidate, it has been unable to realize a white-light emission to date. In this work, the synthesis of Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets with a pure white emission from a single component is reported. Unlike Mn-doped perovskite nanocubes with insufficient energy transfer efficiency, the current reported Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets show a 10 times higher energy transfer efficiency from perovskite to Mn impurities at the required emission wavelengths (about 450 nm for perovskite emission and 580 nm for Mn emission). As a result, the Mn/perovskite dual emission intensity ratio surprisingly elevates from less than 0.25 in case of Mn-doped nanocubes to 0.99 in the current Mn-doped CsPb 2 Cl x Br 5-x nanoplatelets, giving rise to a pure white light emission with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.32). More importantly, the highest PL QY for Mn-doped perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets is up to 49%, which is a new record for white-emitting nanocrystals with single component. These highly luminescent nanoplatelets can be blended with polystyrene (PS) without changing the white light emission but dramatically improving perovskite stability. The perovskite-PS composites are available not only as a good solution processable coating material for assembling LED, but also as a superior conversion material for achieving white light LED with a single conversion layer.

  10. The use of imidazolium ionic liquid/copper complex as novel and green catalyst for chemiluminescent detection of folic acid by Mn-doped ZnS nanocrystals

    Science.gov (United States)

    Azizi, Seyed Naser; Shakeri, Parmis; Chaichi, Mohammad Javad; Bekhradnia, Ahmadreza; Taghavi, Mehdi; Ghaemy, Mousa

    2014-03-01

    A novel chemiluminescence (CL) method using water-soluble Mn-doped ZnS quantum dots (QDs) as CL emitter is proposed for the chemiluminometric determination of folic acid in pharmaceutical formulation. Water-soluble Mn-doped ZnS QDs were synthesized by using L-cysteine as stabilizer in aqueous solutions. The nanoparticles were structurally and optically characterized by X-ray powder diffraction (XRD), dynamic light scattering (DLS), Fourier transform infrared spectroscopy (FTIR), UV-Vis absorption spectroscopy and photoluminescence (PL) emission spectroscopy. The CL of ZnS QDs induced by directly chemical oxidation and its ionic liquid-sensitized effect in aqueous solution were then investigated. It was found that oxidants, especially hydrogen peroxide, could directly oxidize ZnS QDs to produce weak CL emission in basic conditions. In the presence of 1,3-dipropylimidazolium bromide/copper a drastic light emission enhancement is observed, related to a strong interaction between Cu2+ and the imidazolium ring. Therefore, a new CL analysis system was developed for the determination of folic acid. Under the optimum conditions, there is a good linear relationship between the relative CL intensity and the concentration of folic acid in the range of 1 × 10-9-1 × 10-6 M of folic acid with a correlation coefficient (R2) of 0.9991. The limit of detection of this system was found to be 1 × 10-10 M. This method is not only simple, sensitive and low cost, but also reliable for practical applications.

  11. Structural, spectroscopic, and dielectric characterizations of Mn-doped 0.67BiFeO3-0.33BaTiO3 multiferroic ceramics

    KAUST Repository

    Hang, Qiming

    2013-09-07

    0.67BiFeO3-0.33BaTiO3 multiferroic ceramics doped with x mol% MnO2 (x = 2–10) were synthesized by solid-state reaction. The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction (XRD). The average grain sizes were reduced from 0.80 μm to 0.50 μm as increasing the Mn-doped levels. Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns. Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images. Ferroelectric domain lamellae (71° ferroelectric domains) with an average width of 5 nm were also observed. Vibrational modes were examined by Raman spectra, where only four Raman peaks at 272 cm−1 (E-4 mode), 496 cm−1 (A 1-4 mode), 639 cm−1, and 1338 cm−1 were observed. The blue shifts in the E-4 and A 1-4 Raman mode frequencies were interpreted by a spring oscillator model. The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve. They were in the range of 350–700 measured at 103 Hz, and the corresponding dielectric losses were in range of 0.43–0.96, approaching to 0.09 at 106 Hz.

  12. Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy

    NARCIS (Netherlands)

    Boschker, Jos E.; Tisbi, E.; Placidi, E.; Momand, Jamo; Redaelli, Andrea; Kooi, Bart J.; Arciprete, Fabrizio; Calarco, Raffaella

    The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3

  13. Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

    Czech Academy of Sciences Publication Activity Database

    Klenovský, P.; Brehm, M.; Křápek, Vlastimil; Lausecker, E.; Munzar, D.; Hackl, F.; Steiner, H.; Fromherz, T.; Bauer, G.; Humlíček, J.

    2012-01-01

    Roč. 86, č. 11 (2012), "115305-1"-"115305-8" ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : semiconductors nanocrystals * cyclotron resonance * uniaxial-stress * band alignment * Ge islands * germanium * wells * silicon * Si(001) * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012 http://prb.aps.org/abstract/PRB/v86/i11/e115305

  14. Ratiometric Phosphorescent Probe for Thallium in Serum, Water, and Soil Samples Based on Long-Lived, Spectrally Resolved, Mn-Doped ZnSe Quantum Dots and Carbon Dots.

    Science.gov (United States)

    Lu, Xiaomei; Zhang, Jinyi; Xie, Ya-Ni; Zhang, Xinfeng; Jiang, Xiaoming; Hou, Xiandeng; Wu, Peng

    2018-02-20

    Thallium (Tl) is an extremely toxic heavy metal and exists in very low concentrations in the environment, but its sensing is largely underexplored as compared to its neighboring elements in the periodic table (especially mercury and lead). In this work, we developed a ratiometric phosphorescent nanoprobe for thallium detection based on Mn-doped ZnSe quantum dots (QDs) and water-soluble carbon dots (C-dots). Upon excitation with 360 nm, Mn-doped ZnSe QDs and C-dots can emit long-lived and spectrally resolved phosphorescence at 580 and 440 nm, respectively. In the presence of thallium, the phosphorescence emission from Mn-doped ZnSe QDs could be selectively quenched, while that from C-dots retained unchanged. Therefore, a ratiometric phosphorescent probe was thus developed, which can eliminate the potential influence from both background fluorescence and other analyte-independent external environment factors. Several other heavy metal ions caused interferences to thallium detection but could be efficiently masked with EDTA. The proposed method offered a detection limit of 1 μg/L, which is among the most sensitive probes ever reported. Successful application of this method for thallium detection in biological serum as well as in environmental water and soil samples was demonstrated.

  15. The development of a new optical sensor based on the Mn doped ZnS quantum dots modified with the molecularly imprinted polymers for sensitive recognition of florfenicol

    Science.gov (United States)

    Sadeghi, Susan; Jahani, Moslem; Belador, Foroogh

    2016-04-01

    The Mn doped ZnS quantum dots (Mn:ZnS QDs) capped with the florfenicol molecularly imprinted polymer (Mn:ZnS QDs@MIP) were prepared via the sol-gel surface imprinting approach using 3-aminopropyltriethoxysilane (APTES) as the functional monomer and tetraethoxysilane (TEOS) as the cross-linker for the optosensing of the florfenicol. Transmission electron microscopy (TEM), X-ray diffractometer, IR spectroscopy, UV-Vis absorption spectrophotometry, and spectrofluorometry were used to elucidate the formation, morphology, and identification of the products. To illustrate the usefulness of the new imprinted material, the non-imprinted coated Mn:ZnS QDs (Mn:ZnS QDs@NIP) were synthesized without the presence of the florfenicol. It was revealed that the fluorescence (FL) intensity of the Mn:ZnS QDs@MIP increased with increasing the FF concentration. Under the optimal conditions, changes in the FL intensity in the presence of the target molecule showed a linear response in the concentration range of 30-700 μmol L- 1 with a detection limit of 24 μmol L- 1. The developed method was finally applied successfully to the determination of FF in different meat samples with satisfactory recoveries.

  16. First principles study of structural, elastic, electronic and magnetic properties of Mn-doped AlY (Y=N, P, As) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Sajjad, M. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, Government College University, Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Zhang, H.X. [School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Beijing Key Laboratory of Work Safety Intelligent Monitoring (Beijing University of Posts and Telecommunications), Beijing 100876 (China); Noor, N.A. [Centre for High Energy Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Saeed, Y. [Department of Physics, Government College University, Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Shakir, Imran [Deanship of scientific research, College of Engineering, King Saud University, P. O. BOX 800, Riyadh 11421 (Saudi Arabia); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

    2015-09-15

    We investigate zinc-blende phase Al{sub 0.75}Mn{sub 0.25}Y (Y=N, P, As) compounds using full-potential linear-augmented-plane wave plus local-orbital method. For computing structural and elastic properties the Generalized Gradient Approximation (GGA) has been used; whereas the electronic and magnetic properties are examined at the optimized GGA lattice parameters by employing modified Becke and Johnson local density approximation. All these compounds are found to be stable in ferromagnetic ordering in the zinc-blende structure which is supported by the computed elastic constants. The nature of electronic band structure are calculated and the nature of band gaps in the doped system is analyzed. The results are examined to identify exchange mechanism which is the main source of introducing ferromagnetism in the compounds under investigation. Spin charge density contour plots in the (1 1 0) plane and the evaluation of s–p and p–d exchange constants (N{sub 0}α and N{sub 0}β) are evaluated for understanding bonding and exchange splitting process, respectively. - Highlights: • Spin-polarized DFT investigation Mn-doped AlN, AlP and AlAs is reported. • Structrual and elastic properites are computed for evaluating stability. • mBJLDA used for appropriate treatment of d states of Mn for electronic properties. • Half metallicity, ferromagnetic stability and exchange constants are evaluated.

  17. The development of a new optical sensor based on the Mn doped ZnS quantum dots modified with the molecularly imprinted polymers for sensitive recognition of florfenicol.

    Science.gov (United States)

    Sadeghi, Susan; Jahani, Moslem; Belador, Foroogh

    2016-04-15

    The Mn doped ZnS quantum dots (Mn:ZnS QDs) capped with the florfenicol molecularly imprinted polymer (Mn:ZnS QDs@MIP) were prepared via the sol-gel surface imprinting approach using 3-aminopropyltriethoxysilane (APTES) as the functional monomer and tetraethoxysilane (TEOS) as the cross-linker for the optosensing of the florfenicol. Transmission electron microscopy (TEM), X-ray diffractometer, IR spectroscopy, UV-Vis absorption spectrophotometry, and spectrofluorometry were used to elucidate the formation, morphology, and identification of the products. To illustrate the usefulness of the new imprinted material, the non-imprinted coated Mn:ZnS QDs (Mn:ZnS QDs@NIP) were synthesized without the presence of the florfenicol. It was revealed that the fluorescence (FL) intensity of the Mn:ZnS QDs@MIP increased with increasing the FF concentration. Under the optimal conditions, changes in the FL intensity in the presence of the target molecule showed a linear response in the concentration range of 30-700 μmol L(-1) with a detection limit of 24 μmol L(-1). The developed method was finally applied successfully to the determination of FF in different meat samples with satisfactory recoveries. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Effects of surrounding powder in sintering process on the properties of Sb and Mn- doped barium-strontium titanate PTCR ceramics

    Directory of Open Access Journals (Sweden)

    Pornsuda Bomlai

    2006-05-01

    Full Text Available In this research, the effects of surrounding powder used during sintering of Sb and Mn doped bariumstrontium titanate (BST ceramics were studied. The ceramic samples were prepared by a conventional mixed-oxide method and placed on different powders during sintering. Phase formation, microstructure and PTCR behavior of the samples were then observed. Microstructures and PTCR behavior varied with the type of surrounding powder, whereas the crystal structure did not change. The surrounding powder has more effects on the shape of the grain than on the size. The grain size of samples was in the range of 5-20 μm. The most uniform grain size and the highest increase of the ratio of ρmax/ρRT were found to be about 106 for samples which had been sintered on Sb-doped BST powder. This value was an order of magnitude greater than for samples sintered on a powder of the equivalent composition to that of the sample pellet.

  19. Chemiluminescence of Mn-Doped ZnS Nanocrystals Induced by Direct Chemical Oxidation and Ionic Liquid-Sensitized Effect as an Efficient and Green Catalyst

    Directory of Open Access Journals (Sweden)

    Seyed Naser Azizi

    2013-01-01

    Full Text Available A novel chemiluminescence (CL method was proposed for doping water-soluble Mn in ZnS quantum dots (QDs as CL emitter. Water-soluble Mn-doped ZnS QDs were synthesized by using L-cysteine as stabilizer in aqueous solution. These nanoparticles were structurally and optically characterized by X-ray powder diffraction (XRD, dynamic light scattering (DLS, Fourier transform infrared spectroscopy (FTIR, UV-Vis absorption spectroscopy, and photoluminescence (PL emission spectroscopy. The CL of ZnS QDs was induced directly by chemical oxidation and its ionic liquid-sensitized effect in aqueous solution was then investigated. It was found that oxidants, especially hydrogen peroxide, could directly oxidize ZnS QDs to produce weak CL emission in basic solutions. In the presence of 1,3-dipropylimidazolium bromide/copper, a drastic light emission enhancement was observed which is related to a strong interaction between Cu2+ and the imidazolium ring. In these conditions, an efficient CL light was produced at low pH which is suggested to be beneficial to the biological analysis. The CL properties of QDs not only will be helpful to study physical chemistry properties of semiconductor nanocrystals but also they are expected to find use in many fields such as luminescence devices, bioanalysis, and multicolor labeling probes.

  20. Surface molecularly imprinted polymer capped Mn-doped ZnS quantum dots as a phosphorescent nanosensor for detecting patulin in apple juice.

    Science.gov (United States)

    Zhang, Wengang; Han, Yong; Chen, Xiumei; Luo, Xueli; Wang, Jianlong; Yue, Tianli; Li, Zhonghong

    2017-10-01

    A Mn-doped ZnS quantum dots (QDs) based nanosensor for selective phosphorescent determination of patulin (PAT) was synthesized with 6-hydroxynicotinic acid (6-HNA) as dummy template via a surface molecular imprinting sol-gel process. FTIR and XRD indicated the successful graft of molecularly imprinted polymer (MIP) onto crystal QDs. Binding tests revealed that the MIP-QDs presented higher selectivity, adsorption capacity and mass transfer rate than non-imprinted polymers, demonstrating a specific recognition for PAT among competitive mycotoxins and its analogues with the imprinting factor of 2.02. The MIP-QDs could recognize PAT in a linear range of 0.43-6.50μmolL -1 with a detection limit of 0.32μmolL -1 and a correlation coefficient (R 2 ) of 0.9945. Recoveries of 102.9-127.2% with relative standard deviations 0.05). The results indicated a simple phosphorescent nanosensor for PAT detection in complex matrix. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Room-temperature phosphorescent discrimination of catechol from resorcinol and hydroquinone based on sodium tripolyphosphate capped Mn-doped ZnS quantum dots.

    Science.gov (United States)

    Wang, He-Fang; Wu, Ye-Yu; Yan, Xiu-Ping

    2013-02-05

    A room-temperature phosphorescence (RTP) strategy was developed for direct, additive-free discrimination of catechol from resorcinol and hydroquinone based on sodium tripolyphosphate capped Mn-doped ZnS quantum dots (STPP-Mn-ZnS QDs). The RTP response of STPP-Mn-ZnS QDs to the three isomers was pH-dependent, and the greatest difference in the RTP response to the isomers was observed at pH 8.0: catechol enhanced the RTP intensity of the QDs, while resorcinol and hydroquinone had little effect on the RTP intensity of the QDs. The enhanced RTP intensity of 1 μM catechol was not affected by the coexistence of 30 μM resorcinol and 50 μM hydroquinone at pH 8.0. The detection limit of this RTP method was 53 nM catechol, and the precision was 3.2% (relative standard deviation) for five replicate detections of 1 μM catechol. The discrimination mechanism was ascribed to the weak bonded ligand of STPP-Mn-ZnS QDs and the different interaction between the three isomers and STPP-Mn-ZnS QDs. The strong binding of catechol to Zn resulted in the extraction of Zn from the surface of STPP-Mn-ZnS QDs and the generation of holes that were trapped by Mn(2+) to form Mn(3+). Catechol also promoted the reduction of Mn(3+) into Mn(2+) excited state, thus ultimately inducing the enhanced RTP response of STPP-Mn-ZnS QDs.

  2. Effect of Mn doping on the electrical and optical properties of SnO{sub 2} thin films deposited by chemical spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Indira Gandhi, T. [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramesh Babu, R., E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur 603 203, Tamil Nadu (India); Arivanandhan, M. [Nanodevices and Nanomaterials Division, Research Institute of Electronics, Shizuoka University, Hamamatsu 432 8011 (Japan)

    2016-01-01

    Manganese doped tin oxide (Mn:SnO{sub 2}) thin films were deposited by spray pyrolysis technique adding various concentrations of manganese acetate (0–8 at.%) in the spray solution of tin chloride. X-ray diffraction studies show the preferred growth along (301) direction for 0.0–2.0 at.% concentration of manganese acetate in the spray solution. Higher doping concentration of manganese acetate (4 and 8 at.%) in the solution shifts the preferred growth direction along (200) plane. Scanning electron microscopic studies reveal the change in the surface morphology of the films due to various levels of Mn doping. X-ray photoelectron spectroscopic analysis shows that in the prepared thin film manganese atoms exist in Mn{sup 3+} state. The sheet resistance of SnO{sub 2} film decreases from ~ 23.5 Ω/□ to 22.8 Ω/□ for 0.4 at.% doping concentration and increases with increasing Mn concentration in the solution. The average optical transmittance of SnO{sub 2} thin film increases from 34% to 55% in the wavelength region of 550–850 nm with increase in Mn concentration. Mn concentration in the films influences the intensity of the photoluminescence emission peak observed for SnO{sub 2} film at 398 nm. - Highlights: • Mn:SnO2 thin films deposited with different doping concentration by spray pyrolysis technique • Structural information confirms that all the films are polycrystalline and tetragonal crystal structure. • XPS studies confirm the oxidation state of Mn (3 +) and Sn (4 +) in Mn:SnO{sub 2} thin film. • 0.4 at.% of Mn:SnO{sub 2} thin film shows lowest sheet resistance 22.8 Ω/□. • Optical band gap of 1.2 at.% Mn:SnO{sub 2} thin film is about 3.70 eV.

  3. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    Science.gov (United States)

    Mastari, Marouane; Charles, Matthew; Bogumilowicz, Yann; Thai, Quang Minh; Pimenta Barros, Patricia; Argoud, Maxime; Papon, Anne-Marie; Gergaud, Patrice; Landru, Didier; Kim, Youngpil; Hartmann, Jean Michel

    2018-04-12

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometer-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterized by AFM, XRD and TEM. Smooth SiGe surfaces and full strain relaxation were obtained in the 650-700°C range for 2D SiGe layers grown either on Si or SiGe nano-pillars. © 2018 IOP Publishing Ltd.

  4. Improved performance of CdS/CdSe quantum dot-sensitized solar cells using Mn-doped PbS quantum dots as a catalyst in the counter electrode

    International Nuclear Information System (INIS)

    Kim, Byung-Man; Son, Min-Kyu; Kim, Soo-Kyoung; Hong, Na-Yeong; Park, Songyi; Jeong, Myeong-Soo; Seo, Hyunwoong; Prabakar, Kandasamy; Kim, Hee-Je

    2014-01-01

    Highlights: • PbS QDs synthesized using the SILAR method act not only as the electrochemical catalysts but as donors providing additional electrons under illumination. • The electrochemical and optical properties of the PbS QDs were enhanced considerably after Mn 2+ doping. • The electron supply from the counter electrode was significantly activated by Mn 2+ doping, improving the performance of QDSSC. - Abstract: This study reports the enhanced catalytic ability of Mn-doped PbS QDs synthesized using a successive ionic layer adsorption and reaction (SILAR) method for quantum dot-sensitized solar cells (QDSSCs). Electrochemical and optical analysis of each material showed that the catalytic ability of the PbS electrode was improved significantly by Mn 2+ doping. Two factors can explain this behavior. The first is that intentional impurities have an impact on the structure of the host material, such as increases in surface roughness. The other is that dopants create new energy states that delay the exciton recombination time and allow charge separation to be activated. As a result, the photoelectron supply from the counter electrode is accelerated, resulting in vigorous redox reactions at the polysulfide electrolyte. The performance of the CdS/CdSe QDSSC using a Mn-doped PbS counter electrode was compared with those using the Pt and PbS counter electrodes. Finally, a power conversion efficiency of 3.61% was achieved with the Mn-doped PbS counter electrode (V OC = 0.61 V, J SC = 11.67 mA cm −2 , FF = 0.51) under one sun illumination (100 mW cm −2 ), which is ∼40% higher than that of CdS/CdSe QDSSCs with the bare PbS counter electrode

  5. Role of ion beam excitations on quasi one-dimensional magnetic system of Mn-doped LiCuVO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Abhishek [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Dwivedi, G.D.; Kumar, Shiv [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Shahi, P.; Shukla, K.K. [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Ghosh, A.K. [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Center, ArunaAsaf Ali Marg, New Delhi 110067 (India); Singh, R.K. [Departments of Physics, Banaras Hindu University, Varanasi 221005 (India); Nigam, A.K. [Department of CMP & MS, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2015-07-01

    Induction of short range ferromagnetic ordering has been observed in the quasi one dimensional antiferromagnetic LiCuVO{sub 4} system with doping of Mn in the octahedral (Cu) site. Though, magnetic ordering is not stable enough as further increase of Mn-concentration, magnetic ordering gets deteriorated. This might be the case that Mn{sup 2+} ions, with strong magnetic moment as compared to Cu{sup 2+} ions, enhance the ferromagnetic coupling between the nearest neighbor atoms of quasi-one-dimensional magnetic LiCuVO{sub 4} system. Ferromagnetic ordering in LiCu{sub 0.95}Mn{sub 0.05}VO{sub 4} system also degraded after high energy ion beam excitation which creates defects and may disturb the short range ferromagnetic ordering in its near locality but it does not have much effect on the long range antiferromagnetic ordering. Irradiation causes no change in Raman modes of LiCu{sub 0.95}Mn{sub 0.05}VO{sub 4} system, while it produces some new vibrational modes in intermediate and high frequency region of LiCu{sub 0.9}Mn{sub 0.1}VO{sub 4} system. Above results have been understood based on competitions between ferromagnetic nearest neighbor (NN) coupling and antiferromagnetic next nearest neighbor (NNN) coupling in CuO{sub 2} chain. - Highlights: • Quasi 1-D magnetic systems LiCu{sub 1-x}Mn{sub x}VO{sub 4} (x = 0.00, 0.05 & 0.10) have been prepared. • Doping of Mn induces short range ferromagnetic ordering in the system. • High-energy ion beam excitations degrade ferromagnetic ordering in Mn doped LiCuVO{sub 4}. • Irradiations decay short range FM order but has no effect on long range AFM order. • Irradiation leads to few new vibrational modes in LiCu{sub 0.9}Mn{sub 0.1}VO{sub 4} system.

  6. Absorption and Radiation Transitions in Mn2+(3d5 Configuration of Mn-Doped ZnS Nanoparticles Synthesized by a Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Bui Hong Van

    2013-01-01

    Full Text Available The Mn-doped ZnS nanoparticles with Mn content of 0–15 mol% were synthesized by a hydrothermal method from the solutions Zn(CH3COO2 0.1 M, Mn(CH3COO2 0.01 M, and Na2S2O3 0.1 M at 220°C for 15 h. These nanoparticles presented the cubic structure with average particle size about 16 nm. The yellow-orange photoluminescence (PL band at 586 nm was attributed to the radiation transition of the electrons in 3d5 unfilled shell of Mn2+ ions [4T1(4G-6A1(6S] in ZnS matrix. The photoluminescence excitation (PLE spectra monitored at the yellow-orange band, the absorption spectra also showed the near band edge absorption of 336–349 nm and the characteristic absorption bands of Mn2+(3d5 ions at 392, 430, 463, 468, 492, and 530 nm. These bands should be attributed to the absorption transitions of 3d5 electrons from the ground state 6A1(6S to the excited states 4E(4D, 4T2(4D, 4A1(4G-4E(4G, 4T2(4G, and 4T1(4G of Mn2+ ions. The intensity of PL band and absorption bands of Mn2+(3d5 ions also increased with the Mn content from 0.1 to 9 mol%, but their peak positions were almost unchanged. The PLE spectra showed clearly the energy level splitting of Mn2+ ions in ZnS crystal field and allowed for the calculation of the splitting width between the excited states 4A1(4G, 4E(4G about of 229 cm−1 (28.6 meV, and the Racah parameters B=559 cm−1, C=3202 cm−1  (γ=C/B=5.7, and the crystal field strength Dq=568 cm−1. The PL spectra with different excitation wavelengths corresponding to absorption transition bands of the PLE spectra allow for the discussion of the indirect and direct excitation mechanisms of Mn2+(3d5 ions in the ZnS crystal.

  7. Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

    International Nuclear Information System (INIS)

    Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

    2011-01-01

    The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

  8. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    International Nuclear Information System (INIS)

    Talochkin, A. B.; Chistokhin, I. B.

    2011-01-01

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest “quantum box” model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  9. Magnetic anisotropy of (Ge,Mn) nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jain, A; Jamet, M; Barski, A; Devillers, T; Yu, I-S; Porret, C; Gambarelli, S; Maurel, V; Desfonds, G; Jacquot, J F, E-mail: abhinav.jain@cea.fr [Institut Nanosciences et Cryogenie, CEA-UJF, F-38054, Grenoble (France)

    2011-04-01

    We present a correlation between structural and magnetic properties of different (Ge,Mn) nanostructures grown on Ge(001) and Ge(111) substrates. Thin films of Ge{sub 1-x}Mn{sub x} were grown by low temperature molecular beam epitaxy to favor the out-of-equilibrium growth. Depending on the growth conditions crystalline or amorphous (Ge,Mn) nanocolumns have been observed on Ge(001) substrates. The magnetic properties were probed by superconducting quantum interference device (SQUID), vibrating sample magnetometer (VSM) and electron paramagnetic resonance (EPR). With the help of these complementary techniques (SQUID and EPR), magnetic anisotropy in these nanostructures has been investigated and different anisotropy constants were calculated.

  10. Highly-luminescent Eu,Sm,Mn-doped CaS up/down conversion nano-particles: application to ultra-sensitive latent fingerprint detection and in vivo bioimaging.

    Science.gov (United States)

    Wang, Jikai; He, Ni; Zhu, Yanli; An, Zhengbin; Chen, Ping; Grimes, Craig A; Nie, Zhou; Cai, Qingyun

    2018-01-16

    Due to their unique properties, rare-earth doped upconversion luminescence (UCL) nanomaterials are of considerable scientific interest. Meanwhile, alkaline-earth sulfide materials based on a completely different electron trapping (ET) mechanism demonstrate extremely high UCL efficiencies, which are several dozens of times more than those of conventional fluoride UCL nanomaterials. However, the large particle size, easy hydrolysis, and difficulty in achieving uniform dispersion have precluded bioassay applications. Herein, we have synthesized super-bright Eu,Sm,Mn-doped CaS nanoparticles of ∼30 nm average particle size using a reverse microemulsion technique. The UCL quantum yield was up to nearly 60%. Modification of the nanoparticles with an organic layer allows their stable dispersion throughout aqueous solutions without significant loss of the fluorescence intensity. We demonstrate the application of the novel UCL materials to latent fingerprint detection, deep tissue imaging, and in vivo bioimaging.

  11. Ge /Si heteronanocrystal floating gate memory

    Science.gov (United States)

    Li, Bei; Liu, Jianlin; Liu, G. F.; Yarmoff, J. A.

    2007-09-01

    Metal oxide semiconductor field effect transistor memories with Ge /Si heteronanocrystals (HNCs) as floating gate were fabricated and characterized. Ge /Si HNCs with density of 5×1011cm-2 were grown on n-type Si (100) substrate with thin tunnel oxide on the top. Enhanced device performances including longer retention time, faster programming speed, and higher charge storage capability are demonstrated compared with Si nanocrystal (NC) memories. The erasing speed and endurance performance of Ge /Si HNC memories are similar to that of Si NC devices. The results suggest that Ge /Si HNCs may be an alternative to make further floating gate memory scaling down possible.

  12. Epitaxial growth of Ge strain relaxed buffer on Si with low threading dislocation density

    OpenAIRE

    Abedin, Ahmad; Asadollahi, Ali; Garidis, Konstantinos; Hellström, Per-Erik; Östling, Mikael

    2016-01-01

    Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si substrate by reduced pressure chemical vapor deposition. The surface topography measured by AFM shows that the strain relaxation occurred through pit formation which resulted in freezing the defects at Ge/Si interface. Moreover a lower threading dislocation density compared to conventional strain relaxed Ge buffers on Si was observed. We show that by growing the first layer at temperatures below ...

  13. Aqueous-phase synthesis and color-tuning of core/shell/shell inorganic nanocrystals consisting of ZnSe, (Cu, Mn)-doped ZnS, and ZnS

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jongwan; Yoon, Sujin [Department of Chemistry and Research Institute for Natural Science, Hanyang University, Seoul, 133-791 (Korea, Republic of); Kim, Felix Sunjoo, E-mail: fskim@cau.ac.kr [School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul, 156-756 (Korea, Republic of); Kim, Nakjoong, E-mail: kimnj@hanyang.ac.kr [Department of Chemistry and Research Institute for Natural Science, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2016-06-25

    We report synthesis of colloidal nanocrystals based on ZnSe core, (Cu,Mn)-doped ZnS inner-shell, and ZnS outer-shell by using an eco-friendly method and their optical properties. Synthesis of core/shell/shell nanocrystals was performed by using a one-pot/three-step colloidal method with 3-mercaptopropionic acid as a stabilizer in aqueous phase at low temperature. A double-shell structure was employed with inner-shell as a host for doping and outer-shell as a passivation layer for covering surface defects. Copper and manganese were introduced as single- or co-dopants during inner-shell formation, providing an effective means to control the emission color of the nanocrystals. The synthesized nanocrystals showed fluorescent emission ranging from blue to green, to white, and to orange, adjusted by doping components, amounts, and ratios. The photoluminescence quantum yields of the core/doped-shell/shell nanocrystals approached 36%. - Highlights: • ZnSe/ZnS:(Cu,Ms)/ZnS core/(doped)shell/shell nanocrystals were synthesized in an aqueous phase. • Emission color of nanocrystals was controlled from blue to white to orange by adjusting the atomic ratio of Cu and Mn co-dopants. • Photoluminescence quantum yields of the colloidal nanocrystals approached 36%.

  14. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, Violetta K.; Pavlova, Lydia M., E-mail: fhim@mail.ru

    2014-06-25

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe{sub 4} grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe{sub 4} grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe{sub 4} crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition.

  15. Homogeneity testing and quantitative analysis of manganese (Mn in vitrified Mn-doped glasses by laser-induced breakdown spectroscopy (LIBS

    Directory of Open Access Journals (Sweden)

    V. K. Unnikrishnan

    2014-09-01

    Full Text Available Laser-induced breakdown spectroscopy (LIBS, an atomic emission spectroscopy method, has rapidly grown as one of the best elemental analysis techniques over the past two decades. Homogeneity testing and quantitative analysis of manganese (Mn in manganese-doped glasses have been carried out using an optimized LIBS system employing a nanosecond ultraviolet Nd:YAG laser as the source of excitation. The glass samples have been prepared using conventional vitrification methods. The laser pulse irradiance on the surface of the glass samples placed in air at atmospheric pressure was about 1.7×109 W/cm2. The spatially integrated plasma emission was collected and imaged on to the spectrograph slit using an optical-fiber-based collection system. Homogeneity was checked by recording LIBS spectra from different sites on the sample surface and analyzing the elemental emission intensities for concentration determination. Validation of the observed LIBS results was done by comparison with scanning electron microscope- energy dispersive X-ray spectroscopy (SEM-EDX surface elemental mapping. The analytical performance of the LIBS system has been evaluated through the correlation of the LIBS determined concentrations of Mn with its certified values. The results are found to be in very good agreement with the certified concentrations.

  16. 0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance

    Science.gov (United States)

    Zhang, Yulei; Li, Weili; Qiao, Yulong; Zhao, Yu; Wang, Zhenyu; Yu, Yang; Xia, Hetian; Li, Ze; Fei, Weidong

    2018-02-01

    Srx(Na0.5Bi0.5)1-xTi0.99Mn0.01O3 (x = 0.2, 0.4, 0.6, and 0.8) relaxor ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates by the Sol-Gel method. The influence of the Sr content on the microstructures, ferroelectric properties, and energy-storage performances of the thin films were investigated in detail. The Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film exhibits very slim hysteresis loops with the highest electric breakdown field strength due to reduced oxygen vacancies. Owing to the high breakdown field strength of 3134.3 kV/cm, the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film shows a giant recoverable energy-storage density of 33.58 J/cm3. These results indicate that the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film is promising for applications of advanced capacitors with high energy-storage density.

  17. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    We have deposited relatively thick (∼ 60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski–Krastanov growth mode observed in epitaxial growth. Both the islands ...

  18. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    OpenAIRE

    Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

    2013-01-01

    We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

  19. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  20. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  1. Evolution of the structural and multiferroic properties of PbFe{sub 2/3}W{sub 1/3}O{sub 3} ceramics upon Mn-doping

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, S.A. [Center of Materials Science, Karpov' Institute of Physical Chemistry, Vorontsovo Pole 10, Moscow, 105064 (Russian Federation); Department of Engineering Sciences, Uppsala University, Box 534, 751 21, Uppsala (Sweden); Bush, A.A. [Moscow State University of Information Technologies, RadioEngineering and Electronics, pr.Vernadskogo 78, Moscow, 119454 (Russian Federation); Ritter, C. [Institute Laue-Langevin, BP 156, F-38042, Grenoble (France); Behtin, M.A. [Moscow State University of Information Technologies, RadioEngineering and Electronics, pr.Vernadskogo 78, Moscow, 119454 (Russian Federation); Cherepanov, V.M. [National Research Centre Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182 (Russian Federation); Autieri, C.; Kvashnin, Y.O.; Di Marco, I.; Sanyal, B.; Eriksson, O. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20, Uppsala (Sweden); Kumar, P. Anil; Nordblad, P. [Department of Engineering Sciences, Uppsala University, Box 534, 751 21, Uppsala (Sweden); Mathieu, R., E-mail: roland.mathieu@angstrom.uu.se [Department of Engineering Sciences, Uppsala University, Box 534, 751 21, Uppsala (Sweden)

    2017-02-01

    The perovskite system Pb(Fe{sub 1-x}Mn{sub x}){sub 2/3}W{sub 1/3}O{sub 3} (0 ≤ x ≤ 1, PFMWO) has been prepared by conventional solid-state reaction under different sintering conditions. Structures and phase composition as well as thermal, magnetic and dielectric properties of the compounds have been systematically investigated experimentally and by first-principles density functional calculations. A clean perovskite phase is established at room temperature for compositions 0 ≤ x ≤ 0.4. Rietveld refinements of X-ray and neutron powder diffraction patterns demonstrate that the compounds crystallize in space group Pm-3m (0 ≤ x ≤ 0.4). The degree of ordering of the Fe and W/Mn cations was found to depend on the concentration of Mn. First-principles calculations suggest that the structural properties of PFMWO are strongly influenced by the Jahn-Teller effect. The PFMWO compounds behave as relaxor ferroelectrics at weak Mn-doping with a dielectric constant that rapidly decreases with increasing Mn content. A low temperature antiferromagnetic G-type order with propagation vector k = (1/2,1/2,1/2) is derived from neutron powder diffraction data for the samples with x ≤ 0.4. However with increasing doping concentration, the magnetic order is perturbed. First-principles calculations show that the dominant exchange coupling is antiferromagnetic and occurs between nearest neighbor Fe atoms. When the system is doped with Mn, a relatively weak ferromagnetic (FM) interaction between Fe and Mn atoms emerges. However, due to the presence of this FM interaction, the correlation length of the magnetic order is greatly shortened already at rather low doping levels. - Highlights: • The perovskite system Pb(Fe{sub 1−x}Mn{sub x}){sub 2/3}W{sub 1/3}O{sub 3} (0 ≤ x ≤ 1, PFMWO) has been synthesized. • The structural, magnetic, and dielectric properties of PFMWO have been investigated. • The degree of ordering of the Fe and W/Mn cations was found to depend on x.

  2. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  3. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Science.gov (United States)

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  4. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  5. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  6. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  7. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  8. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

    Science.gov (United States)

    Kral, S; Zeiner, C; Stöger-Pollach, M; Bertagnolli, E; den Hertog, M I; Lopez-Haro, M; Robin, E; El Hajraoui, K; Lugstein, A

    2015-07-08

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

  9. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  10. [Ge=Ge](4-) Dumbbells in the Zintl Phase Li3NaGe2.

    Science.gov (United States)

    Ruschewitz, Uwe

    2016-03-01

    Ge-Ge double bonds: The reaction of elemental lithium, sodium, and germanium at 750 °C results in the Zintl phase Li3NaGe2 , which, according to the Zintl-Klemm concept, contains [Ge=Ge](4-) dumbbells with unprecedented short Ge-Ge distances. Based on structural, spectroscopic, and theoretical considerations, convincing evidence is given that Ge-Ge double bonds are in fact present. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  12. Far infrared spectroscopy of solids. I. Impurity states in Al2O3. II. Electron-hole droplets in Ge

    International Nuclear Information System (INIS)

    Aurbauch, R.L.

    1975-01-01

    Far infrared Fourier transform spectroscopy was used to study the low lying vibronic states of Mn 3+ in Al 2 O 3 and the plasma absorption of electron-hole droplets in Ge. The transmission of Mn-doped samples of Al 2 O 3 was measured in the frequency range from 3 to 30 cm -1 in applied magnetic fields up to 50 kG. Absorption lines were observed due to both ground and excited state transitions. Polarization measurements established that these absorption lines were due to electric dipole transitions. Temperature dependence measurements were used to derive a level diagram for the low lying states of Mn 3+ . A phenomenological model based on an electronic Hamiltonian was developed which successfully describes the data. The empirically determined trigonal field and spin-orbit quenching parameters of this model are 0.7 and 0.1 respectively. This quenching is attributed to the dynamic Jahn--Teller interaction. The plasma absorption of small (α) electron-hole drops in Ge was measured in the frequency range from 30 to 300 cm -1 . The observed absorption is in good agreement with measurements by Vavilov and other workers. A theoretical model which includes both intraband and interband contributions to the dielectric constant in the Rayleigh limit of Mie theory is used to describe the observed lineshape. Measurements of plasma absorption of large (γ) drops in inhomogeneously stressed Ge were made in magnetic fields up to 50 kG. The lineshape at zero applied field was calculated in the large sphere limit of Mie theory including intraband terms and a zero-strain interband term. Qualitative agreement with experiment was obtained. The peak absorption shifted quadratically with applied magnetic field and the total plasma absorption increased. No oscillatory structure was observed in the field-dependence of the total absorption

  13. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Dikareva, N. V. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation)

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  14. The effect of biaxial strain on impurity diffusion in Si and SiGe

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob

    2005-01-01

    Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have...

  15. Synthesis and characterization of germanium monosulphide (GeS)

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  16. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  17. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    strates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski–Krastanov growth mode ob- served in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of ...

  18. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  19. Heterogeneously grown tunable group-IV laser on silicon

    Science.gov (United States)

    Hudait, Mantu; Clavel, M.; Lester, L.; Saladukha, D.; Ochalski, T.; Murphy-Armando, F.

    2016-02-01

    Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si.

  20. The design, fabrication, and characterization of silicon-germanium optoelectronic devices grown by molecular beam epitaxy

    Science.gov (United States)

    Sustersic, Nathan Anthony

    In recent years, Ge and SiGe devices have been actively investigated for potential optoelectronic applications such as germanium solar cells for long wavelength absorption, quantum-dot intermediate band solar cells (IBSCs), quantum-dot infrared photodetectors (QDIPs) and germanium light-emitting diodes (LEDs). Current research into SiGe based optoelectronic devices is heavily based on nanostructures which employ quantum confinement and is at a stage where basic properties are being studied in order to optimize growth conditions necessary for incorporation into future devices. Ge and SiGe based devices are especially attractive due to ease of monolithic integration with current Si-based CMOS processing technology, longer carrier lifetime, and reduced phonon scattering. Defect formation and transformation was studied in SiGe layers grown on Si and Ge (100) substrates. The epitaxial layers were grown with molecular beam epitaxy (MBE) and characterized by X-ray measurements in order to study the accommodation of elastic strain energy in the layers. The accommodation of elastic strain energy specifies the amount of point defects created on the growth surface which may transform into extended crystalline defects in the volume of the layers. An understanding of crystalline defects in high lattice mismatched epitaxial structures is critical in order to optimize growth procedures so that epitaxial structures can be optimized for specific devices such as Ge based solar cells. Considering the optimization of epitaxial layers based on the structural transformation of point defects, Ge solar cells were fabricated and investigated using current-voltage measurements and quantum efficiency data. These Ge solar cells, optimized for long wavelength absorption, were fabricated to be employed in a bonded Ge/Si solar cell device. The doping of self-assembled Ge quantum dot structures grown on Si (100) was investigated using atomic force microscopy (AFM) and photoluminescence (PL

  1. Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick S; Xie, Yuantao; Heremans, Jean J

    2015-10-14

    The magnetotransport properties of epitaxial Ge/AlAs heterostructures with different growth conditions and substrate architectures have been studied under ±9 T magnetic field and at 390 mK temperature. Systematic mobility measurements of germanium (Ge) epilayers grown on GaAs substrates at growth temperatures from 350 to 450 °C allow us to extract a precise growth window for device-quality Ge, corroborated by structural and morphological properties. Our results on Si substrate using a composite metamorphic AlAs/GaAs buffer at 400 °C Ge growth temperature, show that the Ge/AlAs system can be tailored to have a single carrier transport while keeping the charge solely in the Ge layer. Single carrier transport confined to the Ge layer is demonstrated by the weak-localization quantum correction to the conductivity observed at low magnetic fields and 390 mK temperature. The weak localization effect points to a near-absence of spin-orbit interaction for carriers in the electronically active layer and is used here for the first time to pinpoint Ge as this active layer. Thus, the epitaxial Ge grown on Si using AlAs/GaAs buffer architecture is a promising candidate for next-generation energy-efficient fin field-effect transistor applications.

  2. Strategies for Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers

    Science.gov (United States)

    2002-01-01

    densities as low as 2x10 cm enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide -stripe gain-guided devices with...quantum wells in GaAs grown above it. GaAs grown on Ge can introduce complications for device integration due to autodoping effects from amphoteric Ge...dopant concentrations were measured using secondary ion mass spectroscopy (SIMS). Oxide -stripe gain-guided devices were fabricated from these structures

  3. Type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSnβ heterojunctions

    Science.gov (United States)

    Dey, Swagata; Mukhopadhyay, Bratati; Sen, Gopa; Basu, P. K.

    2018-02-01

    We have examined type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSβ heterojunctions grown on virtual substrates in Si platform. It is found that, for different values of x, y, α and β, direct band gap type II band line up can be achieved for both tensile and compressive strains. The calculated band gap energy corresponds to the mid infrared to far infrared regions in the electromagnetic spectrum.

  4. Sb mediated formation of Ge/Si quantum dots: Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tonkikh, A.A., E-mail: tonkikh@mpi-halle.de [Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Institute for Physics of Microstructures RAS, Nizhniy Novgorod (Russian Federation); Zakharov, N.D. [Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Novikov, A.V.; Kudryavtsev, K.E. [Institute for Physics of Microstructures RAS, Nizhniy Novgorod (Russian Federation); Talalaev, V.G. [ZIK SiLi-nano, Martin Luther University Halle-Wittenberg (Germany); Fuhrmann, B.; Leipner, H.S. [Interdisciplinary Center of Materials Science, Martin Luther University Halle-Wittenberg (Germany); Werner, P. [Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)

    2012-02-01

    The phenomenon of surfactant (Sb) mediated formation of Ge/Si(100) islands (quantum dots) by means of molecular beam epitaxy is discussed. The limited diffusivity of Si and Ge adatoms caused by the Sb layer leads to a reduction of the size of Ge islands, the increase in the island density, and the sharpening of the interfaces of Ge islands. Thereby, a thin Sb layer is considered to be a powerful tool that provides more freedom in designing Ge quantum dot features. Ge quantum dots, grown via a thin Sb layer and embedded coherently in a Si p-n junction, are revealed to be the origin of the intense photo- and electroluminescence in the spectral range of about 1.5 {mu}m at room temperature.

  5. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  6. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  7. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

    Science.gov (United States)

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Hong, Augustin J; Chen, Shengyu; Wang, Minsheng; Zeng, Caifu; Yang, Hong-Jie; Tuan, Hsing-Yu; Tsai, Cho-Jen; Chen, Lih Juann; Wang, Kang L

    2010-12-17

    In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.

  8. The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

    International Nuclear Information System (INIS)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

    2013-01-01

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

  9. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  10. GaAs/Ge/Si epitaxial substrates: Development and characteristics

    Directory of Open Access Journals (Sweden)

    Yury Buzynin

    2017-01-01

    Full Text Available We developed high quality 2-inch GaAs/Ge/Si (100 epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2∙105 cm-2 and the surface RMS roughness value was under 1 nm.

  11. Kirkendall void formation in reverse step graded Si1‑xGex/Ge/Si(001) virtual substrates

    Science.gov (United States)

    Sivadasan, Vineet; Rhead, Stephen; Leadley, David; Myronov, Maksym

    2018-02-01

    Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1‑xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1‑xGex layer is grown at high temperatures and for x ≤ 0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si1‑xGex and other growth parameters.

  12. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  13. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  14. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David, E-mail: david.lederman@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Marcus, Matthew A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tarafder, Kartick [Department of Physics, BITS-Pilani Hyderabad Campus, Secunderabad, Andhra Pradesh 500078 (India)

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  15. P/N InP solar cells on Ge wafers

    Science.gov (United States)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  16. Structure cristalline du composé intermétallique Ni18Ge12

    Directory of Open Access Journals (Sweden)

    Mohammed Kars

    2015-03-01

    Full Text Available Single crystals of octadecanickel dodecagermanide were grown by chemical transport reaction. The intermetallic compound crystallizes in a superstructure of the hexagonal NiAs type (B8 type. All atoms in the asymmetric unit lie on special positions except one Ni atom (two Ni atoms have site symmetry -6.. and another one has site symmetry .2. while the Ge atoms have site symmetries 32., m.. and 3... In the structure, the Ni atoms are arranged in 11- or 13-vertex polyhedra (CN = 11–13. The coordination polyhedra of the Ge atoms are bicapped square antiprisms (CN = 10 or 11-vertex polyhedra (CN = 11. The structure exhibits strong Ge...Ni interactions, but no close Ge...Ge contacts are observed. The Ni atoms with CN = 13 form infinite chains along [001] with an Ni—Ni distance of 2.491 (2 Å.

  17. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

    Science.gov (United States)

    Chen, Lin; Fung, Wayne Y; Lu, Wei

    2013-01-01

    Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

  18. Growth and characterization of high k ZrO2 on Ge (100)

    Science.gov (United States)

    Rumaiz, Abdul; Carini, Gabriella; Siddons, Peter; Woicik, Joseph; Rehak, Pavel

    2009-03-01

    The higher mobility of carriers combined with a low effective mass in Ge as compared to Si has generated a lot of interest in Ge based devices. This is particularly so in X-ray radiation detectors where Si based detectors become transparent at higher energy. The challenge in realizing a Ge based detector is having a robust barrier oxide since the native Ge oxide is hygroscopic. We have grown high k ZrO2 on Ge (100) using direct metal sputtering followed by UV oxidation [1]. High energy X-ray photoelectron spectroscopy (XPS) was performed to study the oxidation state of ZrO2 as well the interface with Ge. A simple structure with Ge/GeO/ZrO2(25 nm)/Al (200 nm) was created. A significant hysteresis was observed in the capacitance-voltage measurement which is indicative of some interface states [2]. The effect of the intermediate layer between ZrO2 and Ge on the interface states will be addressed. Valence band measurement done using high energy XPS will be discussed. [1] C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntrye and K. C. Sarawat, IEEE Electron Dev. Lett. 28, 473 (2002) [2] H. Kim, C.O. Chui, K. C. Sarawat and P. C. McIntrye, Apl. Phys. Lett. 83, 2647 (2003)

  19. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    International Nuclear Information System (INIS)

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  20. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  1. Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors.

    Science.gov (United States)

    d'Avezac, Mayeul; Luo, Jun-Wei; Chanier, Thomas; Zunger, Alex

    2012-01-13

    Combining two indirect-gap materials-with different electronic and optical gaps-to create a direct gap material represents an ongoing theoretical challenge with potentially rewarding practical implications, such as optoelectronics integration on a single wafer. We provide an unexpected solution to this classic problem, by spatially melding two indirect-gap materials (Si and Ge) into one strongly dipole-allowed direct-gap material. We leverage a combination of genetic algorithms with a pseudopotential Hamiltonian to search through the astronomic number of variants of Si(n)/Ge(m)/…/Si(p)/Ge(q) superstructures grown on (001) Si(1-x)Ge(x). The search reveals a robust configurational motif-SiGe(2)Si(2)Ge(2)SiGe(n) on (001) Si(x)Ge(1-x) substrate (x≤0.4) presenting a direct and dipole-allowed gap resulting from an enhanced Γ-X coupling at the band edges.

  2. Graphic Grown Up

    Science.gov (United States)

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  3. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  4. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  5. Piezoelectric properties of Sr3 Ga2 Ge4 single crystals

    Indian Academy of Sciences (India)

    TECS

    Abstract. A new piezoelectric single crystal, Sr3Ga2Ge4O14 (SGG), has been grown successfully by the verti- cal Bridgman method with crucible-sealing technique. SGG crystal up to 2″ in diameter has been obtained. The relative dielectric constants, the piezoelectric strain constants, elastic compliance constants and ...

  6. Neutron diffraction studies of atomic structures of amorphous Fe-Ge and Ni-Ge alloys

    International Nuclear Information System (INIS)

    Yamada, Kazuyoshi; Endoh, Yasuo; Ishikawa, Yoshikazu; Watanabe, Noboru.

    1980-01-01

    The structures of Ge rich amorphous Fe-Ge and Ni-Ge alloys were studied by pulsed neutron total scattering. The partial structure factors of S sub(GeGe)(Q), S sub(NiGe)(Q) and S sub(NiNi)(Q) were determined successfully by using Ni 60 isotope for the Ni-Ge alloys. The Ge atoms in the 10 at% Ni-Ge amorphous alloy were found to construct a similar atomic structure as that of the amorphous Ge, while the intermediate short range order configuration between the tetrahedral random network (TRN) and the dense random packing (DRP) structure was found for the 30 at% Ni-Ge alloy. The Ge-Ge pair correlation for this intermediate short range order could well be reproduced by the modified Ge II microcrystalline model. (author)

  7. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  8. Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

    Directory of Open Access Journals (Sweden)

    Pascale Armand

    2014-06-01

    Full Text Available Using the slow-cooling method in selected MoO3-based fluxes, single-crystals of GeO2 and GaPO4 materials with an α-quartz-like structure were grown at high temperatures (T ≥ 950 °C. These piezoelectric materials were obtained in millimeter-size as well-faceted, visually colorless and transparent crystals. Compared to crystals grown by hydrothermal methods, infrared and Raman measurements revealed flux-grown samples without significant hydroxyl group contamination and thermal analyses demonstrated a total reversibility of the α-quartz ↔ β-cristobalite phase transition for GaPO4 and an absence of phase transition before melting for α-GeO2. The elastic constants CIJ (with I, J indices from 1 to 6 of these flux-grown piezoelectric crystals were experimentally determined at room and high temperatures. The ambient results for as-grown α-GaPO4 were in good agreement with those obtained from hydrothermally-grown samples and the two longitudinal elastic constants measured versus temperature up to 850 °C showed a monotonous evolution. The extraction of the ambient piezoelectric stress contribution e11 from the CD11 to CE11 difference gave for the piezoelectric strain coefficient d11 of flux-grown α-GeO2 crystal a value of 5.7(2 pC/N, which is more than twice that of α-quartz. As the α-quartz structure of GeO2 remained stable up to melting, a piezoelectric activity was observed up to 1000 °C.

  9. <300> GeV team

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

  10. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  11. Luminescence in Mn-doped CdS nanocrystals

    Indian Academy of Sciences (India)

    Wintec

    rather deep states that give rise to red-shifted emission. Counio et al (1998) used stoichiometric amounts of cad- mium and sulfur ions. They also observed an emission band at an energy lower than that of Mn emission. They attribute it to deep surface trap recombinations which are most likely from defect related states. Thus ...

  12. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  13. Luminescence in Mn-doped CdS nanocrystals

    Indian Academy of Sciences (India)

    ... Periasamy2 D D Sarma1 3. Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India; Department of Chemical Sciences, Tata Institute of Fundamental Research, Mumbai 400 005, India; Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata 700 032, ...

  14. Luminescence in Mn-doped CdS nanocrystals

    Indian Academy of Sciences (India)

    Photoluminescence (PL) spectra of the doped NCs differ from that of the undoped NCs with an additional peak due to Mn – transitions. ... Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India; Department of Chemical Sciences, Tata Institute of Fundamental Research, Mumbai ...

  15. Effect of Mn doping on electrical properties and accelerated ageing ...

    Indian Academy of Sciences (India)

    Administrator

    paper, the influence of the valences and contents of Mn on the microstructure, electric properties and d.c. acceler- ... lated by sieving with a 100-mesh screen to produce the starting powder. The powder was uniaxially ... SiC paper and polished with 0⋅3 μm-Al2O3 powder to a mirror-like surface. The polished samples were ...

  16. Luminescence in Mn-doped CdS nanocrystals

    Indian Academy of Sciences (India)

    Wintec

    Synthesis procedure was borrowed from Nag et al (2007) but with a desired change in the reaction temperatures. A typical synthesis involved dissolution of Cd2+ (4-y mmol) and. Mn2+ (y ... sponding to the zinc-blende or the wurtzite structure. The details of the ..... al (1996) used an excess of sulfide ions whereas we used.

  17. Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor.

    Science.gov (United States)

    Zhu, Yan; Maurya, Deepam; Priya, Shashank; Hudait, Mantu K

    2014-04-09

    Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

  18. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pezzoli, Fabio, E-mail: fabio.pezzoli@unimib.it; Giorgioni, Anna; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Miglio, Leo [LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Gallacher, Kevin; Millar, Ross W.; Paul, Douglas J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Isa, Fabio [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Biagioni, Paolo [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Isella, Giovanni [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy)

    2016-06-27

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO{sub 2} in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  19. Evidence for spin to charge conversion in GeTe(111

    Directory of Open Access Journals (Sweden)

    C. Rinaldi

    2016-03-01

    Full Text Available GeTe has been predicted to be the father compound of a new class of multifunctional materials, ferroelectric Rashba semiconductors, displaying a coupling between spin-dependent k-splitting and ferroelectricity. In this paper, we report on epitaxial Fe/GeTe(111 heterostructures grown by molecular beam epitaxy. Spin-pumping experiments have been performed in a radio-frequency cavity by pumping a spin current from the Fe layer into GeTe at the Fe ferromagnetic resonance and detecting the transverse charge current originated in the slab due to spin-to-charge conversion. Preliminary experiments indicate that a clear spin to charge conversion exists, thus unveiling the potential of GeTe for spin-orbitronics.

  20. 1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Rumyantsev, V. V. [Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University of Nizhny Novgorod (NNSU), Nizhny Novgorod 603950 (Russian Federation); Tonkikh, A. A. [Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany); ZIK SiLi-nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) D-06120 (Germany); Zakharov, N. D. [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany); Zvonkov, B. N. [The NNSU Physical-Technical Research Institute, Nizhny Novgorod 603950 (Russian Federation)

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3 μm at room temperature. We attribute this peak to the direct band gap transitions between Γ-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  1. Raman scattering from Ge{sub 1-x}Sn{sub x} (x ≤ 0.14) alloys

    Energy Technology Data Exchange (ETDEWEB)

    Navarro C, H.; Rodriguez, A. G.; Vidal, M. A. [Universidad Autonoma de San Luis Potosi, Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la Tecnologia, Alvaro Obregon No. 64, 78000 San Luis Potosi, S. L. P. (Mexico); Perez Ladron de G, H. [Universidad de Guadalajara, Centro Universitario de los Lagos, Av. Enrique Diaz de Leon No. 1144, Col. Paseos de la Montana, 47460 Lagos de Moreno, Jalisco (Mexico)

    2015-07-01

    Ge{sub 1-x}Sn{sub x} alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14% by high resolution X-ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6% as revealed by X-ray diffraction and Raman spectroscopy. (Author)

  2. ZnGeP sub 2 crystals for infrared laser radiation frequency conversion

    CERN Document Server

    Andreev, Y M; Gribenyukov, A I; Korotkova, V V

    1998-01-01

    In this parer, we present some recent results on integrated studies concerned with different aspects of ZnGeP sub 2 crystal technology: synthesis, growth, and post-growth treatment. High-yield two-temperature synthesis and subsequent growth of ZnGeP sub 2 crystals are considered. By X-Ray phase analysis it has been found that two-temperature synthesis of ZnGeP sub 2 is realized through binary zinc and germanium phosphides formed at the Zn-Ge mixture temperature of about 900 .deg. C and the P pressure of 7 approx 10 atm. Using the heat-balance equation, a ratio of the thermal conductivity in the solid to that in the liquid ZnGeP sub 2 near the melting point has been determined. The value of the determined ratio is K sub l /K sub s approx =2.3. Analysis of the most favored crystallographic directions for ZnGeP sub 2 growth has been performed. These directions are [116], [132] and [102]. Data for optical absorption of the as-grown and the annealed ZnGeP sub 2 crystals are also presented.

  3. Skyrmions and Novel Spin Textures in FeGe Thin Films and Artificial B20 Heterostructures

    Science.gov (United States)

    Ahmed, Adam Saied

    Skyrmions are magnetic spin textures that have a non-zero topological winding number associated with them. They have attracted much interest recently since they can be as small as 1 nm and could be the next generation of magnetic memory and logic. First, we grow epitaxial films of FeGe by molecular beam epitaxy and characterized the skyrmion properties. This had led us to image skyrmions in real-space with Lorentz transmission electron microscopy for the first time in the United States. Next, from an extensive series of thin and thick films, we have experimentally shown the existence of a magnetic surface state in FeGe and, consequently, any skyrmion material for the first time. Complementary theoretical calculations supported the existence of chiral bobbers--a surface state only predicted in 2015. Next, we fabricated for the first time a new class of skyrmion materials: B20 superlattices. These novel heterostructures of [FeGe/MnGe/CrGe] have now opened the door for tunable skyrmion systems with both Dresselhaus and Rashba Dzyaloshinskii-Moriya interactions. Additionally, we perform resonant soft x-ray scattering to image magnetic spin textures in reciprocal space for FeGe thin films in transmission. We have accomplished the removal of substrate and left an isolated single-crystal FeGe film. Lastly, SrO is grown on graphene as a crystalline, atomically smooth, and pinhole free tunnel barrier for spin injection.

  4. Strain field mapping of dislocations in a Ge/Si heterostructure.

    Directory of Open Access Journals (Sweden)

    Quanlong Liu

    Full Text Available Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001 substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM. The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

  5. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  6. Forbidden energy band gap in diluted a-Ge1−xSix:N films

    International Nuclear Information System (INIS)

    Guarneros, C.; Rebollo-Plata, B.; Lozada-Morales, R.; Espinosa-Rosales, J.E.; Portillo-Moreno, J.; Zelaya-Angel, O.

    2012-01-01

    By means of electron gun evaporation Ge 1−x Si x :N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10 −4 Pa, then a pressure of 2.7 × 10 −2 Pa of high purity N 2 was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge 1−x Si x :N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E g ) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E g ) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E g (x). In this case E g (x) versus x is different to the variation of E g in a-Ge 1−x Si x and a-Ge 1−x Si x :H. This fact can be related to the formation of Ge 3 N 4 and GeSi 2 N 4 when x ≤ 0.67, and to the formation of Si 3 N 4 and GeSi 2 N 4 for 0.67 ≤ x. - Highlights: ► Nitrogen doped amorphous Ge 1-x Si x thin films are grown by electron gun technique. ► Nitrogen atoms on E g of the a-Ge 1-x Si x films in the 0 £ x £ 1 range are analyzed. ► Variation in 0 £ x £ 1 range shows a warped change of E g in 1.0 – 3.6 eV range. ► The change in E g (x) behavior when x ∼ 0.67 was associated with Ge 2 SiN 4 presence.

  7. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

    International Nuclear Information System (INIS)

    Arivanandhan, Mukannan; Gotoh, Raira; Fujiwara, Kozo; Uda, Satoshi; Hayakawa, Yasuhiro

    2015-01-01

    Highlights: • Effective segregation of Ge in B and Ge codoped Czochralski-Si crystal growth was analyzed. • The equilibrium segregation coefficient of Ge was calculated. • The experimentally results were analytically analyzed using partitioning theory. - Abstract: The segregation of Ge in B and Ge codoped Czochralski (CZ)-Si crystal growth was investigated. The concentration of Ge in heavily Ge codoped CZ-Si was measured by electron probe micro analysis (EPMA) and X-ray fluorescence spectroscopy. The effective segregation coefficient of Ge (k eff ) was calculated by fitting the EPMA data to the normal freezing equation, and by taking the logarithmic ratio of the Ge concentrations at the seed and tail of the ingots (top to bottom approach). The k eff of Ge increased from 0.30 to 0.55, when the initial Ge concentration in the Si melt (C L(o) Ge ) was increased from 3 × 10 19 to 3 × 10 21 cm −3 . To avoid cellular growth, the crystal pulling rate was decreased for heavily Ge codoped crystal growth (C L(o) Ge > 3 × 10 20 cm −3 ). The equilibrium segregation coefficient (k 0 ) of Ge was calculated by partitioning theory, and was smaller than the experimentally estimated k eff . The variation of k eff from k 0 was discussed based on Ge clustering in the heavily Ge codoped crystal, which led to changes in the bonding and strain energies caused by the incorporation of Ge into Si

  8. Growth of Bi2Se3 topological insulator thin film on Ge(1 1 1) substrate

    Science.gov (United States)

    Kim, Seungyeon; Lee, Sangsoo; Woo, Jeongseok; Lee, Geunseop

    2018-02-01

    Atomically smooth, single crystalline Bi2Se3 thin films were grown on a Ge(1 1 1) substrate using molecular beam epitaxy. Crystallinities of both the surface and the bulk as well as the stoichiometry of the grown film were characterized by using low-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and photoelectron spectroscopies. Hexagonal atomic structures, quintuple layer steps observed in STM images confirmed that the Bi2Se3 film with a (0 0 0 1) surface was grown. Diffraction peak positions as well as the chemical composition determined from the core-level photoelectron spectra coincide well with those expected for the Bi2Se3 crystal. The surface state with a Dirac cone was observed in the valence photoelectron spectra, which also support that a high-quality Bi2Se3 film was grown on the Ge(1 1 1) substrate. The interface between Ge(1 1 1) and Bi2Se3(0 0 0 1) is expected to be abrupt due to the small lattice between them.

  9. Grown on Novel Microcarriers

    Directory of Open Access Journals (Sweden)

    Torsten Falk

    2012-01-01

    Full Text Available Human retinal pigment epithelial (hRPE cells have been tested as a cell-based therapy for Parkinson’s disease but will require additional study before further clinical trials can be planned. We now show that the long-term survival and neurotrophic potential of hRPE cells can be enhanced by the use of FDA-approved plastic-based microcarriers compared to a gelatin-based microcarrier as used in failed clinical trials. The hRPE cells grown on these plastic-based microcarriers display several important characteristics of hRPE found in vivo: (1 characteristic morphological features, (2 accumulation of melanin pigment, and (3 high levels of production of the neurotrophic factors pigment epithelium-derived factor (PEDF and vascular endothelial growth factor-A (VEGF-A. Growth of hRPE cells on plastic-based microcarriers led to sustained levels (>1 ng/ml of PEDF and VEGF-A in conditioned media for two months. We also show that the expression of VEGF-A and PEDF is reciprocally regulated by activation of the GPR143 pathway. GPR143 is activated by L-DOPA (1 μM which decreased VEGF-A secretion as opposed to the previously reported increase in PEDF secretion. The hRPE microcarriers are therefore novel candidate delivery systems for achieving long-term delivery of the neuroprotective factors PEDF and VEGF-A, which could have a value in neurodegenerative conditions such as Parkinson’s disease.

  10. 76 FR 30573 - Airworthiness Directives; General Electric Company (GE) GE90-110B1 and GE90-115B Turbofan Engines

    Science.gov (United States)

    2011-05-26

    ... applies to General Electric Company (GE) GE90-110B1 and GE90-115B turbofan engines with high-pressure...-0278; Directorate Identifier 2010-NE-10-AD] RIN 2120-AA64 Airworthiness Directives; General Electric Company (GE) GE90- 110B1 and GE90-115B Turbofan Engines AGENCY: Federal Aviation Administration (FAA), DOT...

  11. Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance.

    Science.gov (United States)

    Rangel-Kuoppa, Victor-Tapio; Tonkikh, Alexander; Werner, Peter; Jantsch, Wolfgang

    2013-06-01

    The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.

  12. Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

    Directory of Open Access Journals (Sweden)

    Victor-Tapio Rangel-Kuoppa, Alexander Tonkikh, Peter Werner and Wolfgang Jantsch

    2013-01-01

    Full Text Available The negative differential capacitance (NDC effect is observed on a titanium–oxide–silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs. The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.

  13. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  14. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    International Nuclear Information System (INIS)

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-01-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  15. GaAs Photovoltaics on Polycrystalline Ge Substrates

    Science.gov (United States)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  16. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  17. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Perumal, Karthick

    2013-01-01

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  18. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  19. Aqueous electrodeposition of Ge monolayers.

    Science.gov (United States)

    Liang, Xuehai; Kim, Youn-Geun; Gebergziabiher, Daniel K; Stickney, John L

    2010-02-16

    The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

  20. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  1. Germanium nanowires grown using different catalyst metals

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia, R.C., E-mail: riama@ifsp.edu.br [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP 14169-263 (Brazil); Kamimura, H.; Munhoz, R.; Rodrigues, A.D. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Leite, E.R. [Departamento de Química – LIEC, Universidade Federal de São Carlos, São Carlos, CEP 13565-905 (Brazil); Chiquito, A.J. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil)

    2016-11-01

    Germanium nanowires have been synthesized by the well known vapor-liquid-solid growth mechanism using gold, silver, cooper, indium and nickel as catalyst metals. The influence of metal seeds on nanowires structural and electronic transport properties was also investigated. Electron microscopy images demonstrated that, despite differences in diameters, all nanowires obtained presented single crystalline structures. X-ray patterns showed that all nanowires were composed by germanium with a small amount of germanium oxide, and the catalyst metal was restricted at the nanowires' tips. Raman spectroscopy evidenced the long range order in the crystalline structure of each sample. Electrical measurements indicated that variable range hopping was the dominant mechanism in carrier transport for all devices, with similar hopping distance, regardless the material used as catalyst. Then, in spite of the differences in synthesis temperatures and nanowires diameters, the catalyst metals have not affected the composition and crystalline quality of the germanium nanowires nor the carrier transport in the germanium nanowire network devices. - Highlights: • Ge nanowires were grown by VLS method using Au, Ag, Cu, In and Ni as catalysts. • All nanowires presented high single crystalline quality and long range order. • Devices showed semiconducting behavior having VRH as dominant transport mechanism. • The metal catalyst did not influence structural properties or the transport mechanism.

  2. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  3. Structural defects and epitaxial rotation of C-60 and C-70(111) films on GeS(001)

    DEFF Research Database (Denmark)

    Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.

    1996-01-01

    A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied...

  4. Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

    CSIR Research Space (South Africa)

    Chawanda, A

    2011-05-01

    Full Text Available The authors have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2...

  5. Antiferromagnetic transition in EuCu sub 2 Ge sub 2 single crystals

    CERN Document Server

    Hossain, Z; Yuan, H Q; Sparn, G

    2003-01-01

    Single crystals of EuCu sub 2 Ge sub 2 were grown and characterized using electrical resistivity, magnetization, specific heat and magnetoresistance measurements. The crystals exhibit antiferromagnetic transitions at T sub N sub 1 = 9 K and T sub N sub 2 = 5 K. The T sub N of the flux-grown single crystals reported here are lower than that reported for the polycrystalline sample (T sub N = 13 K) in the literature (Felner and Nowik 1978 J. Phys. Chem. Solids 39 763). The magnetoresistance is positive in the ordered state and negative in the paramagnetic state. The magnetic order could not be suppressed up to a pressure of 25 kbar.

  6. Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation

    Science.gov (United States)

    Kato, M.; Arimoto, K.; Yamanaka, J.; Nakagawa, K.; Sawano, K.

    2017-11-01

    We investigate effects of ion implantation on strain relaxation of SiGe(1 1 0) layers grown on Si(1 1 0) substrates. Ar+ or Si+ ion implantation is carried out before or after the SiGe growth. It is found that the strain relaxation of the SiGe(1 1 0) film is largely enhanced due to implantation-induced defects both for Ar and Si implantation. Particularly, the sample with Si implantation after the SiGe growth allows large strain relaxation and smaller surface roughness than Ar implantation. As a result, a 50-nm-thick Si0.79Ge0.21 or Si0.77Ge0.23(1 1 0) buffer layer with almost full relaxation and rms surface roughness below 0.5 nm was obtained. It is, therefore, expected that high-mobility strained Si/Ge(1 1 0) channels can be realized on the SiGe(1 1 0) relaxed buffer layers fabricated by Si implantation. It is also demonstrated that the local introduction of the implantation defects allows controlling of lateral strain states and dislocation generation, opening new concepts of engineering of both strain and surface orientation.

  7. Fabrication of Coaxial Si(1-x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions.

    Science.gov (United States)

    Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin

    2010-06-17

    We report on bifurcate reactions on the surface of well-aligned Si(1-x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1-x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth of nanowires, SiCl(4) flow was terminated while O(2) gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO(2) by the O(2) gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O(2) pressure without any intermediate region and enables selectively fabricated Ge/Si(1-x)Ge(x) or SiO(2)/Si(1-x)Ge(x) coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

  8. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

    Directory of Open Access Journals (Sweden)

    Hamza Qayyum

    2016-05-01

    Full Text Available The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×1010 cm−2 could be formed over an area larger than 4 mm2. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.

  9. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

    Energy Technology Data Exchange (ETDEWEB)

    Qayyum, Hamza; Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan (China); Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan (China); Lu, Chieh-Hsun [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan (China); Chuang, Ying-Hung [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Lin, Jiunn-Yuan [Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China)

    2016-05-15

    The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×10{sup 10} cm{sup −2} could be formed over an area larger than 4 mm{sup 2}. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.

  10. p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

    International Nuclear Information System (INIS)

    Jakomin, Roberto; Beaudoin, Gregoire; Gogneau, Noelle; Lamare, Bruno; Largeau, Ludovic; Mauguin, Olivia; Sagnes, Isabelle

    2011-01-01

    We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology, the structural and the electrical properties of the Ge layers. The controlled growth of p and n doped Ge layers opens the possibility to realize totally epitaxially grown Ge diodes with improved performances, for example, for solar cell applications.

  11. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  12. Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

    Science.gov (United States)

    Periwal, Priyanka; Sibirev, Nickolay V; Patriarche, Gilles; Salem, Bassem; Bassani, Franck; Dubrovskii, Vladimir G; Baron, Thierry

    2014-09-10

    As MOSFETs are scaled down, power dissipation remains the most challenging bottleneck for nanoelectronic devices. To circumvent this challenge, alternative devices such as tunnel field effect transistors are potential candidates, where the carriers are injected by a much less energetically costly quantum band to band tunneling mechanism. In this context, axial nanowire heterointerfaces with well-controlled interfacial abruptness offer an ideal structure. We demonstrate here the effect of tuning the Ge concentration in a Si1-xGex part of the nanowire on the Si/Si1-xGex and Si1-xGex/Si interfacial abruptness in axial Si-Si1-xGex nanowire heterostructures grown by the Au-catalyzed vapor-liquid-solid method. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter. For a fixed diameter, the value of interface abruptness decreases with increasing the Ge content for the Si/Si1-xGex interface but shows no strong Ge dependence at the Si1-xGex/Si interface where it features a linear correlation with the nanowire diameter. To rationalize these findings, a kinetic model for the layer-by-layer growth of nanowire heterostructures from a ternary Au-Ge-Si alloy is established that predicts a discrepancy in Ge concentration in the layer and the catalyst droplet. The Ge concentration in each layer is predicted to be dependent on the composition of the preceding layer. The most abrupt heterointerface (∼5 nm) is achieved by growing Si1-xGex with x = 0.85 on Si in a 25 nm diameter nanowire.

  13. Magnetooptical properties of iron based Heusler alloy epitaxial films on Ge(111)

    Science.gov (United States)

    Maeda, Yoshihito; Ikeda, Tatsuya; Ichikawa, Takayuki; Nakajima, Takahito; Matsukura, Bui; Sadoh, Taizoh; Miyao, Masanobu

    We have examined the LMOKE of some Heusler alloy films Fe4Si, Fe3Si, Fe2CoSi, Fe2MnSi (21 at and 9 at.%Mn), Co2FeSi epitaxially grown on Ge(111) and found that Fe3Si, Fe4Si and Fe2CoSi films have larger Kerr rotation and smaller coercive fields than the amorphous Fe film and that they may be promising materials for magnetophotonic applications.

  14. Single Crystal Growth and Magnetic Properties of Ferromagnetic URhGe2

    International Nuclear Information System (INIS)

    Matsuda, T.D.; Haga, Y.; Tokiwa, Y.; Galatanu, A.; Yamamoto, E.; Okubo, T.; Onuki, Y.

    2003-01-01

    We have successfully grown a single crystal of uranium intermetallic compound URhGe 2 . The temperature dependence of electrical resistivity shows highly anisotropic behavior. Two anomalies, which correspond to the magnetic ordering temperatures, were observed in the resistivity, magnetic susceptibility and specific heat measurements at T M1 30 K and T M2 =25 K. The magnetic susceptibility also shows a large uniaxial anisotropy with a magnetic easy-axis along the [010] direction. (author)

  15. GeSn p-i-n photodetector for all telecommunication bands detection.

    Science.gov (United States)

    Su, Shaojian; Cheng, Buwen; Xue, Chunlai; Wang, Wei; Cao, Quan; Xue, Haiyun; Hu, Weixuan; Zhang, Guangze; Zuo, Yuhua; Wang, Qiming

    2011-03-28

    Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

  16. Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

    Science.gov (United States)

    Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

    Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

  17. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  18. Channel waveguides formed by ion implantation of PECVD grown silica

    International Nuclear Information System (INIS)

    Leech, P.W.; Faith, M.F.; Johnson, C.M.; Ridgway, M.C.; Bazylenko, M.

    1997-01-01

    Low loss channel waveguides have been formed in silica-on-silicon by implantation with 5 MeV Si and Ge ions. In these experiments, the substrate was comprised of an undoped layer of silica (30 μm thick) which was grown by plasma enhanced chemical vapour deposition (PECVD). The optical loss characteristics of the waveguides, as measured at both λ 1300 and 1550 nm, were independent of the implanted ion species. A minimum in the attenuation loss (α) of ∼0.10-0.20 dB/cm was obtained following both a pre-implant (1050 o C) and a post-implant (400-500 o C) anneal of the waveguides. The ability to produce a minimum in α by pre-implant annealing has been attributed to the thermally induced relaxation of the densified structure in the as-grown layer. Only a comparatively small degree of compaction was measured for Si-implanted samples which did not receive a pre-implant anneal. In contrast, the much larger degree of compaction in the pre-implant annealed samples was similar in magnitiude to that observed in fused silica. These are the first reported examples of ion-implanted waveguides using a substrate of silica grown by PECVD. (author)

  19. Self organization of FeGe/FeSi/FeGe layered structures on Ge and their electrical conduction properties

    Science.gov (United States)

    Matsukura, B.; Hiraiwa, Y.; Nakajima, T.; Narumi, K.; Sakai, S.; Sadoh, T.; Miyao, M.; Maeda, Y.

    We have investigated self organization of novel FeGe/FeSi/FeGe layered structures on Ge(111) and their electrical conduction properties. From analyses of compositional change, diffusion dynamics analyses and microstructure observations, it was revealed that the self organization of the layered structures was enhanced by spinodal decomposition which may be induced by pronounced compositional changes associating to inhomogeneous interdiffusion. The electrical conduction showed singular temperature dependence which obviously reflected natureof Kondo insulator FeSi.

  20. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  1. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  2. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    International Nuclear Information System (INIS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-01-01

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  3. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    International Nuclear Information System (INIS)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro; Nakai, Katsuhiko

    1998-01-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  4. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Nakai, Katsuhiko

    1998-08-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  5. Structural characterisation of silicon-germanium virtual substrate- based heterostructures grown by low pressure chemical vapour deposition

    CERN Document Server

    Mihai-Dilliway, G D

    2002-01-01

    Silicon-germanium heterostructures incorporating compositionally graded virtual substrates are important for the fabrication of a variety of advanced electronic devices. Their successful application depends critically on their surface morphology and defect content. The aim of this research project is to characterise the way in which these structural properties are influenced by the growth parameters used in low pressure chemical vapour deposition (LPCVD) at the Southampton University Microelectronics Centre (SUMC). To this end, a comparative study of the surface quality and the distribution and density of misfit strain relaxation induced defects in SiGe virtual substrate-based heterostructures grown under varying conditions, was carried out. The growth parameters varied have been: growth temperature, initial and final Ge content, Ge concentration gradient, type of Ge grading profile (linear and stepwise) in the virtual substrate, and thickness and presence of a device structure in the capping layer of constan...

  6. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

    Science.gov (United States)

    Reboh, S.; Coquand, R.; Barraud, S.; Loubet, N.; Bernier, N.; Audoit, G.; Rouviere, J.-L.; Augendre, E.; Li, J.; Gaudiello, J.; Gambacorti, N.; Yamashita, T.; Faynot, O.

    2018-01-01

    Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were investigated. From strain maps with a nanometer spatial resolution obtained by transmission electron microscopy, we developed 3D quantitative numerical models describing the mechanics of the structures. While elastic interactions describe every other system reported here, the patterning on the compressive SiGe-On-Insulator substrate that is fabricated by Ge-condensation results in relaxation along the semiconductor/insulator interface, revealing a latent plasticity mechanism. As a consequence, Si layers with a uniaxial stress of 1.4 GPa are obtained, bringing fresh perspectives for strain engineering in advanced devices. These findings could be extended to other semiconductor technologies.

  7. Compensation of Native Defect Acceptors in Microcrystalline Ge and Si1-xGex Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance

    Science.gov (United States)

    Matsui, Takuya; Chang, Chia-Wen; Mizuno, Kouichi; Takeuchi, Yoshiaki; Kondo, Michio

    2012-09-01

    Undoped hydrogenated microcrystalline Ge (µc-Ge:H) films grown by plasma-enhanced chemical vapor deposition reveal high concentration of free holes (>1018 cm-3) when the films exhibit a high crystalline volume fraction. ESR and Hall-effect experiments suggest that the acceptor states arise from the native dangling bond defects at Ge crystalline grain boundaries. It is demonstrated that an intentional oxygen incorporation during the µc-Ge:H deposition reduces the hole concentration by two orders of magnitude. Furthermore, µc-Si1-xGex:H (x=0.1-0.3) alloy p-i-n solar cells show marked improvements in photocarrier collection properties upon oxygen incorporation into the i-layer in the order of 5×1018-1020 cm-3. These findings are explained by the effect of the compensation of the negatively charged Ge dangling bonds by oxygen donors.

  8. Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

    Science.gov (United States)

    Schulte-Braucks, Christian; Hofmann, Emily; Glass, Stefan; von den Driesch, Nils; Mussler, Gregor; Breuer, Uwe; Hartmann, Jean-Michel; Zaumseil, Peter; Schröder, Thomas; Zhao, Qing-Tai; Mantl, Siegfried; Buca, Dan

    2017-05-01

    We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0-0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.

  9. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  10. Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

    Energy Technology Data Exchange (ETDEWEB)

    Moto, Kenta; Sadoh, Taizoh; Miyao, Masanobu, E-mail: miyao@ed.kyushu-u.ac.jp [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Matsumura, Ryo [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Ikenoue, Hiroshi [Department of Gigaphoton Next GLP, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2016-06-27

    Crystalline GeSn-on-insulator structures with high Sn concentration (>8%), which exceeds thermal equilibrium solid-solubility (∼2%) of Sn in Ge, are essential to achieve high-speed thin film transistors and high-efficiency optical devices. We investigate non-thermal equilibrium growth of Ge{sub 1−x}Sn{sub x} (0 ≤ x ≤ 0.2) on quartz substrates by using pulsed laser annealing (PLA). The window of laser fluence enabling complete crystallization without film ablation is drastically expanded (∼5 times) by Sn doping above 5% into Ge. Substitutional Sn concentration in grown layers is found to be increased with decreasing irradiation pulse number. This phenomenon can be explained on the basis of significant thermal non-equilibrium growth achieved by higher cooling rate after PLA with a lower pulse number. As a result, GeSn crystals with substitutional Sn concentration of ∼12% are realized at pulse irradiation of single shot for the samples with the initial Sn concentration of 15%. Raman spectroscopy and electron microscopy measurements reveal the high quality of the grown layer. This technique will be useful to fabricate high-speed thin film transistors and high-efficiency optical devices on insulating substrates.

  11. Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask

    International Nuclear Information System (INIS)

    Huangfu, Yourui; Zhan Wenbo; Hong Xia; Fang Xu; Ye Hui; Ding Guqiao

    2013-01-01

    This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a large-scale, controllable and lithography-free mask, can transfer nanopatterns onto Si without introducing any contaminants. High-density Ge dots are achievable with Ge adatoms confined in Si pits transferred from PAM. High-quality Ge films can also be grown on Si substrates through SiO 2 nano-windows. In this work, 80 and 60 nm pore sizes of PAM were transferred to 70, 50 and 20 nm windows for comparison. For the former two sizes, over-etching of Si beneath every SiO 2 window forms epi-seeds to improve intermixing of Ge–Si. No threading dislocations can be observed emanating from the epi-seeds due to the decreased lattice mismatch. An innovative shadow-etching technique utilizing the aspect ratio of PAM further decreased the lateral dimension of patterns from 60 to 20 nm. Cross-sectional transmission electron microscopy images show that the selective epitaxial Ge films grown from a 20 nm-width interface are defect free, which is attributed to the exponential decay of strain energy as well as Ge–Si intermixing. (paper)

  12. The Ge(0 0 1) surface

    NARCIS (Netherlands)

    Zandvliet, Henricus J.W.

    2003-01-01

    Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a wealth of fascinating phenomena. The Ge(0 0 1) surface is a prototypical example of a system possessing both a strong short-range interaction due to dimerization of the surface atoms, as well as an

  13. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  14. Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms.

    Science.gov (United States)

    Wallace, Patrick M; Sims, Patrick E; Xu, Chi; Poweleit, Christian D; Kouvetakis, John; Menéndez, José

    2017-10-11

    Epitaxial synthesis of Ga(As 1-x P x )Ge 3 alloys on Si(100) substrates is demonstrated using chemical vapor deposition reactions of [D 2 GaN(CH 3 ) 2 ] 2 with P(GeH 3 ) 3 and As(GeH 3 ) 3 precursors. These compounds are chosen to promote the formation of GaAsGe 3 and GaPGe 3 building blocks which interlink to produce the desired crystalline product. Ge-rich (GaP) y Ge 5-2y analogues have also been grown with tunable Ge contents up to 90% by reactions of P(GeH 3 ) 3 with [D 2 GaN(CH 3 ) 2 ] 2 under similar deposition protocols. In both cases, the crystal growth utilized Ge 1-x Si x buffer layers whose lattice constants were specifically tuned as a function of composition to allow perfect lattice matching with the target epilayers. This approach yielded single-phase materials with excellent crystallinity devoid of mismatch-induced dislocations. The lattice parameters of Ga(As 1-x P x )Ge 3 interpolated among the Ge, GaAs, and GaP end members, corroborating the Rutherford backscattering measurements of the P/As ratio. A small deviation from the Vegard's law that depends on the As/P ratio was observed and corroborated by ab initio calculations. Raman scattering shows evidence for the existence of Ga-As and Ga-P bonds in the Ge matrix. The As-rich samples exhibited photoluminescence with wavelengths similar to those observed for pure GaAsGe 3 , indicating that the emission profile does not change in any measurable manner by replacing As by P over a broad range up to x = 0.2. Furthermore, the photoluminescence (PL) data suggested a large negative bowing of the band gap as expected on account of a strong valence band localization on the As atoms. Spectroscopic ellipsometry measurements of the dielectric function revealed a distinct direct gap transition that closely matches the PL emission energy. These measurements also showed that the absorption coefficients can be systematically tuned as a function of composition, indicating possible applications of the new materials

  15. Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

    Science.gov (United States)

    Potié, Alexis; Baron, Thierry; Dhalluin, Florian; Rosaz, Guillaume; Salem, Bassem; Latu-Romain, Laurence; Kogelschatz, Martin; Gentile, Pascal; Oehler, Fabrice; Montès, Laurent; Kreisel, Jens; Roussel, Hervé

    2011-12-01

    The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration ( x) in Si1- x Ge x NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement.

  16. Ge 1-xSn x stressors for strained-Ge CMOS

    Science.gov (United States)

    Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, B.; Eneman, G.; Clarysse, T.; Demeulemeester, J.; Vantomme, A.; Dekoster, J.; Caymax, M.; Loo, R.; Sakai, A.; Nakatsuka, O.; Zaima, S.

    2011-06-01

    In this paper, we propose the fabrication of whole strained Ge complementary metal-oxide-semiconductor (CMOS) with Ge 1-xSn x materials as stressors to outperform the state-of-the-art uniaxial compressive strained Si CMOS. Ge 1-xSn x materials have larger lattice constant than that of Ge, which can apply the strain into Ge channel region. Firstly, we have demonstrated p-type doped Ge 1-xSn x growth by using either B implantation or in situ Ga doping technique. In the B-implanted Ge 1-xSn x formation case, fully strained B-doped Ge 1-xSn x layers with no Sn precipitation can be obtained even after solid phase epitaxial regrowth (SPER). However, the serious dislocation generation in the layer was occurred during SPER. This is caused by the point defects introduced by B implantation. In order to avoid this crystal damage, we have also demonstrated in situ Ga-doped Ge 1-xSn x growth. In this case, we can achieve fully strained Ga-doped Ge 1-xSn x growth without Sn precipitation and any defect generation. Secondary, we have demonstrated the formation of Ni(Ge 1-ySn y) layers for metal/semiconductor contact and investigated the crystalline qualities. The formation of polycrystalline Ni(Ge 1-ySn y) layers on Ge 1-xSn x layers with Sn contents ranging from 2.0% to 6.5% after annealing at from 350 °C to 550 °C can be achieved. Additionally, in the case of the Ni/Ge 1-xSn x/Ge sample with a Sn content of 3.5%, an epitaxial Ni 2(Ge 1-ySn y) layer on a Ge 1-xSn x layer was formed. However, the surface roughness due to the agglomeration of Ni(Ge 1-xSn x) increases with increasing the Sn content and the annealing temperature. Therefore, a low thermal budget must be required for the formation of Ni(Ge 1-xSn x) with high Sn content.

  17. 76 FR 82103 - Airworthiness Directives; General Electric Company (GE) GE90-110B1 and GE90-115B Turbofan Engines

    Science.gov (United States)

    2011-12-30

    ... Airworthiness Directives; General Electric Company (GE) GE90- 110B1 and GE90-115B Turbofan Engines AGENCY... engine failure, and damage to the airplane. DATES: This AD is effective February 3, 2012. The Director of... General Electric, GE-Aviation, Room 285, 1 Neumann Way, Cincinnati, Ohio 45215; email: [email protected

  18. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  19. Positron Spectroscopy of Hydrothermally Grown Actinide Oxides

    Science.gov (United States)

    2014-03-27

    POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES THESIS Edward C. Schneider...United States Government. AFIT-ENP-14-M-33 POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES THESIS...33 POSITRON SPECTROSCOPY OF HYDROTHERMALLY GROWN ACTINIDE OXIDES Edward C. Schneider, BS Captain, USAF Approved

  20. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  1. Structural studies on Te-rich Ge Te melts

    Science.gov (United States)

    Kaban, I.; Jóvári, P.; Hoyer, W.; Delaplane, R. G.; Wannberg, A.

    2006-03-01

    The structure of liquid Ge15Te85, Ge25Te75 and Ge33Te67 alloys has been studied by neutron and x-ray diffraction. Datasets obtained by the two techniques have been modelled simultaneously with the reverse Monte Carlo simulation method. As a result, the first coordination numbers and nearest neighbour distances for the studied alloys were estimated. On the basis of the experimental data, Ge-Ge bonding appears to be present in liquid Ge25Te75 and Ge33Te67. It has been found that temperature dependences of the physico-chemical properties correlate with the structural changes in liquid Ge15Te85.

  2. Nuclear energy outlook: a GE perspective

    International Nuclear Information System (INIS)

    Fuller, J.

    2006-01-01

    Full text: Full text: As one of the world's leading suppliers of power generation and energy delivery technologies, GE Energy provides comprehensive solutions for coal, oil, natural gas and nuclear energy; renewable resources such as wind, solar and biogas, along with other alternative fuels. With the ever increasing demand for energy and pressures to decrease greenhouse gas emissions, global trends indicate a move towards building more base line nuclear generation capacity. As a reliable, cost-competitive option for commercial power generation, nuclear energy also addresses many of the issues the world faces when it comes to the environment. Since developing nuclear reactor technology in the 1950s, GE's Boiling Water Reactor (BWR) technology accounts for more than 90 operating plants in the world today. Building on that success, GE's ABWR design is now the first and only Generation 111 nuclear reactor in operation today. This advanced reactor technology, coupled with current construction experience and a qualified global supply chain, make ESBWR, GE's Generation III+ reactor design, an attractive option for owners considering adding nuclear generation capacity. In pursuit of new technologies, GE has teamed with Silex to develop, commercialize and license third generation laser enrichment technology. By acquiring the exclusive rights to develop and commercialize this technology, GE is positioned to support the anticipated global demands for enriched uranium. At GE, we are continuing to develop imaginative ideas and investing in products that are cost effective, increase productivity, limit greenhouse gas emissions, and improve safety and security for our customers

  3. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  4. Study of superconducting Ba-Ge-Co compounds

    Science.gov (United States)

    Li, Yang; Ross, J. H.; Larrea, J. A.; Baggio-Saitovitch, Elisa

    2004-08-01

    We prepared samples with starting composition Ba 8-Ge 46- x-Co x ( x=0, 4 and 6) by direct melting. These Ge-based compounds were characterized by X-ray diffraction and WDS, and we found two superconducting transitions at TC=10 and 4 K in the Co-free sample. Co-doping results in the suppression of TC to 7 K. The superconducting volume fraction also decreases with increasing Co-doping. For Co-doped samples, there is no 4 K superconducting transition. X-ray refinement shows that the compounds are mixtures of several phases. The dominant phase is diamond Ge, and we found no Ge-clathrate phases. Besides diamond Ge, there are also several weak diffractions from an unknown Ba-Ge phase, and most of them were indexed on the basis of a monoclinic unit cell. Diffraction peaks for Ba 2Ge, BaGe, BaGe 2, BaGe 2O 5, BaGeO 3, Ba 3GeO 5, α-BaGeO 3, BaGe 2O 5, Ba 2Ge 5O 12, β-BaGeO 3, Ba 2GeO 4 and BaGe 4O 9 were carefully searched for but not seen in the samples. For the Co-doped sample, besides the main diamond Ge phase, there is also a semiconducting phase CoGe 2. With increasing Co content, the CoGe 2 content increases. The WDS results agree with this result. The main phase composition for the Co-free sample is Ba 0.01Ge 99.9. We also discuss the origin of two superconducting transitions in Ge-based compounds.

  5. GeV electron microtron

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    A strong consensus has developed recently in the nuclear physics community that research with electromagnetic probes in the 1 to 2 GeV range generated by a high current 100% duty factor electron accelerator represents an exciting new frontier. Because of this rapidly growing interest, a design group of 5 ANL physicists and accelerator specialists recently reviewed developments in accelerator technology and developed conceptual designs for technical evaluation and subsequent cost analysis. Exploratory designs were developed for two concepts, the linac-stretcher ring and a modified microtron system. These were used to make a critical comparison of the two conceptual designs along with an improved microtron design, the double-sided microtron. The results are presented in Table VIII-I. The double-sided microtron shows promise for development into a substantially less expensive facility than a linac-ring system, but its technical feasibility remains to be established. The potential savings in capital cost are large for the microtron system, perhaps $10 million. They dictate that in the absence of a major technical limitation the double-sided microtron is the preferred design

  6. The effects of Mn concentration on structural and magnetic properties of Ge{sub 1-x}Mn{sub x} diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Le, T-G; Dau, M-T; Thanh, V Le; Michez, L; Derrien, J [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM-CNRS), Aix-Marseille Universite, Campus de Luminy, case 913, 13288 Marseille (France); Nam, D N H [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Road, Charlottesville, VA 22904 (United States); Luong, T K P; Khiem, N V, E-mail: lethanh@cinam.univ-mrs.fr [Department of Engineering and Technology, Hong Duc University, 307 Le Lai Street, Thanh Hoa City (Viet Nam)

    2011-04-01

    Reflexion high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) along with physical property measurement system (PPMS) were used to investigate the growth kinetics of Ge{sub 1-x}Mn{sub x} diluted magnetic semiconductors (DMS) grown on Ge(001) by means of molecular beam epitaxy (MBE). At a given intermediate growth temperature of 130 deg. C, we have identified the formation of successive heterogeneous phases when increasing the Mn concentration from 1 to 14 %: DMS phase containing nanosized Mn-rich clusters for x below 2%, DMS phase containing high Curie temperature (T{sub C}) nanocolumns for x ranging from 5 to 6 %, DMS phase in which GeMn nanocolumns and Mn{sub 5}Ge{sub 3} clusters coexist and then finally DMS containing mainly Mn{sub 5}Ge{sub 3} clusters at Mn concentration higher than 12%. Our results confirm that the low solubility of Mn in Ge is the main origin of the formation of heterogeneous phases and provide evidence that it is extremely difficult to form a homogenous GeMn DMS even for Mn concentrations being below 2%. We also demonstrate that high-T{sub C} nanocolumns and Mn{sub 5}Ge{sub 3} clusters are competing processes and the process window corresponding to the stabilisation of high-T{sub C} nanocolumns remains extremely tight.

  7. Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    d' Avezac, M.; Luo, J. W.; Chanier, T.; Zunger, A.

    2012-01-13

    Combining two indirect-gap materials - with different electronic and optical gaps - to create a direct gap material represents an ongoing theoretical challenge with potentially rewarding practical implications, such as optoelectronics integration on a single wafer. We provide an unexpected solution to this classic problem, by spatially melding two indirect-gap materials (Si and Ge) into one strongly dipole-allowed direct-gap material. We leverage a combination of genetic algorithms with a pseudopotential Hamiltonian to search through the astronomic number of variants of Si{sub n}/Ge{sub m}/.../Si{sub p}/Ge{sub q} superstructures grown on (001) Si{sub 1-x}Ge{sub x}. The search reveals a robust configurational motif - SiGe{sub 2}Si{sub 2}Ge{sub 2}SiGe{sub n} on (001) Si{sub x}Ge{sub 1-x} substrate (x {le} 0.4) presenting a direct and dipole-allowed gap resulting from an enhanced {Gamma}-X coupling at the band edges.

  8. Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

    2014-11-07

    Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm(2)/Vs at 290 K and 457 cm(2)/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications.

  9. Vertical gradient freeze of 4 inch Ge crystals in a heater-magnet module

    Science.gov (United States)

    Frank-Rotsch, Ch.; Rudolph, P.

    2009-04-01

    For the first time 4-in. Ge single crystals were grown using the vertical gradient freeze technique (VGF) in a traveling magnetic field (TMF) generated in a heater-magnet module (HMM). The HMM was placed closely around the growth container inside the chamber of the industrial Bridgman equipment "Kronos". The HMM generates heat and a TMF together. It has a coil-shaped design and replaces the standard meander-type heater. Direct current (DC) for heat production and out-of-phase-accelerated currents (AC) for TMF generation were simultaneously delivered to three equally spaced coil segments connected by star-type wiring. In order to achieve a nearly flat and slightly convex growing interface the AC amplitude, frequency and phase shift have been optimized numerically by using the 3D CrysMAS code and validated by striation analysis on as-grown crystals. Low-field frequencies in the range f=20-50 Hz proved to be of most suitable condition. TMF programming is required to obtain constant interface morphology over the whole growth run. First Ge single crystals grown under nearly optimal conditions show reduced macro- and micro-inhomogeneities, relatively low dislocation density of (3-10)×10 2 cm -2, and high carrier mobility of μp=2800 cm 2 V -1 s -1.

  10. Ab-initio study of NiGe/Ge Schottky contact

    Science.gov (United States)

    Vaidya, Dhirendra; Lodha, Saurabh; Ganguly, Swaroop

    2017-04-01

    Germanium is a promising material for next-generation electronic and photonic devices, and engineering ohmic contacts to it can be expected to be a key challenge therein. The sensitivity of the Schottky barrier height of the NiGe/Ge contact to the detailed interfacial structure is revealed using the ab-initio study of pseudo-epitaxial NiGe(001)/Ge(100) contact using the computationally efficient meta-generalized-gradient-approximation, which can overcome the well-known bandgap underestimation problem. The p-type Schottky barrier height for an atomically flat pseudo-epitaxial NiGe(001)/Ge(100) contact is calculated to be 260 meV, an overestimate of about 160 meV compared to experiments. However, the estimated modulation of this barrier height, by about 270 meV, due to interface morphology points to a possible explanation for this discrepancy and suggests ways to engineer the contact for lesser resistivity.

  11. BaGe6 and BaGe(6-x): incommensurately ordered vacancies as electron traps.

    Science.gov (United States)

    Akselrud, Lev; Wosylus, Aron; Castillo, Rodrigo; Aydemir, Umut; Prots, Yurii; Schnelle, Walter; Grin, Yuri; Schwarz, Ulrich

    2014-12-15

    We report the high-pressure high-temperature synthesis of the germanium-based framework compounds BaGe6 (P = 15 GPa, T = 1073 K) and BaGe(6-x) (P = 10 GPa, T = 1073 K) which are metastable at ambient conditions. In BaGe(6-x), partial fragmentation of the BaGe6 network involves incommensurate modulations of both atomic positions and site occupancy. Bonding analysis in direct space reveals that the defect formation in BaGe(6-x) is associated with the establishment of free electron pairs around the defects. In accordance with the electron precise composition of BaGe(6-x) for x = 0.5, physical measurements evidence semiconducting electron transport properties which are combined with low thermal conductivity.

  12. Electronic structure and optical properties of noncentrosymmetric LiGaGe{sub 2}Se{sub 6}, a promising nonlinear optical material

    Energy Technology Data Exchange (ETDEWEB)

    Lavrentyev, A.A.; Gabrelian, B.V.; Vu, V.T.; Ananchenko, L.N. [Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Yelisseyev, A.; Krinitsin, P.G. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)

    2016-11-15

    X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar{sup +} ion-bombarded surfaces of LiGaGe{sub 2}Se{sub 6} single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe{sub 2}Se{sub 6} is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe{sub 2}Se{sub 6} compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe{sub 2}Se{sub 6}, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe{sub 2}Se{sub 6}, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe{sub 2}Se{sub 6} single crystal. The main optical characteristics of the LiGaGe{sub 2}Se{sub 6} compound are elucidated by the first-principles calculations.

  13. Cathodoluminescence depth profiling in SiO sub 2 Ge layers

    CERN Document Server

    Barfels, T; Fitting, H J; Schmidt, B

    2002-01-01

    For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E sub 0 2/dots30 keV. Applying a constant incident power regime (E sub 0 x I sub 0 = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO sub 2 layers of thickness d = 500 nm have been implanted by Ge sup + -ions of energy 350 keV and doses (0.5-5)10 sup 1 sup 6 ions/cm sup 2. Thus Ge profiles with a concentration maximum of (0.4 - 4) at% at the depth of d sub m /cong240 nm are expected. Afterwards the layers have been partially annealed up to T sub a = 1100 sup o C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (lambda = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes...

  14. Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability

    Science.gov (United States)

    Salvalaglio, Marco; Zaumseil, Peter; Yamamoto, Yuji; Skibitzki, Oliver; Bergamaschini, Roberto; Schroeder, Thomas; Voigt, Axel; Capellini, Giovanni

    2018-01-01

    We present the morphological evolution obtained during the annealing of Ge strips grown on Si ridges as a prototypical process for 3D device architectures and nanophotonic applications. In particular, the morphological transition occurring from Ge/Si nanostrips to nanoislands is illustrated. The combined effect of performing annealing at different temperatures and varying the lateral size of the Si ridge underlying the Ge strips is addressed by means of a synergistic experimental and theoretical analysis. Indeed, three-dimensional phase-field simulations of surface diffusion, including the contributions of both surface and elastic energy, are exploited to understand the outcomes of annealing experiments. The breakup of Ge/Si strips, due to the activation of surface diffusion at high temperature, is found to be mainly driven by surface-energy reduction, thus pointing to a Rayleigh-like instability. The residual strain is found to play a minor role, only inducing local effects at the borders of the islands and an enhancement of the instability.

  15. Nonthermal Plasma Synthesis of Core/Shell Quantum Dots: Strained Ge/Si Nanocrystals.

    Science.gov (United States)

    Hunter, Katharine I; Held, Jacob T; Mkhoyan, K Andre; Kortshagen, Uwe R

    2017-03-08

    In this work, we present an all-gas-phase approach for the synthesis of quantum-confined core/shell nanocrystals (NCs) as a promising alternative to traditional solution-based methods. Spherical quantum dots (QDs) are grown using a single-stage flow-through nonthermal plasma, yielding monodisperse NCs, with a concentric core/shell structure confirmed by electron microscopy. The in-flight negative charging of the NCs by plasma electrons keeps the NC cores separated during shell growth. The success of this gas-phase approach is demonstrated here through the study of Ge/Si core/shell QDs. We find that the epitaxial growth of a Si shell on the Ge QD core compressively strains the Ge lattice and affords the ability to manipulate the Ge band structure by modulation of the core and shell dimensions. This all-gas-phase approach to core/shell QD synthesis offers an effective method to produce high-quality heterostructured NCs with control over the core and shell dimensions.

  16. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  17. Ge Quantum Dot Infrared Imaging Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  18. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  19. Une surstructure de α-Ge, type diamant, induite par un dopage d'antimoine

    Directory of Open Access Journals (Sweden)

    Adrian Gómez Herrero

    2017-05-01

    Full Text Available Single crystals of antimony-doped germanium, Ge1–xSbx+0.01 (x ≃ 0.0625, were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type α-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The antimony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4a (site symmetry -43m, and are also at an adjacent tetrahedral interstitial site with partially occupation (16% at position 4c (or 4d (site symmetry -43m. The structural model does not show close Sb...Sb contacts, and suggests that the interstitial antimony atoms move between the two adjacent tetrahedral sites.

  20. Une surstructure de α-Ge, type diamant, induite par un dopage d'anti-moine.

    Science.gov (United States)

    Herrero, Adrian Gómez; Hammoudi, Lamia; Kars, Mohammed; Roisnel, Thierry; Otero-Diáz, L Carlos

    2017-05-01

    Single crystals of anti-mony-doped germanium, Ge 1- x Sb x +0.01 ( x ≃ 0.0625), were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type α-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The anti-mony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4 a (site symmetry -43 m ), and are also at an adjacent tetra-hedral inter-stitial site with partially occupation (16%) at position 4 c (or 4 d ) (site symmetry -43 m ). The structural model does not show close Sb⋯Sb contacts, and suggests that the inter-stitial anti-mony atoms move between the two adjacent tetra-hedral sites.

  1. Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

    Science.gov (United States)

    Fung, Wayne Y.; Chen, Lin; Lu, Wei

    2011-08-01

    High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak current density of 2.4 kA/cm2, and high tunneling current density of 237 kA/cm2 at 1 V reverse bias, all obtained at room temperature. The peak current is found to increase with temperature and the data can be well explained with a band-to-band tunneling model. These results suggest that Si-Ge heterojunction with low defect density can be obtained for device applications such as tunnel diodes and tunnel field-effect transistors.

  2. Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, D; Cantoni, M; Rinaldi, C; Bertacco, R, E-mail: matteo.cantoni@polimi.it [LNESS, Dipartimento di Fisica - Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)

    2011-04-01

    We report on the chemical and electronic properties of epitaxial Fe/MgO/Ge(001) heterostructures probed by X-ray Photoemission Spectroscopy. At variance with the Fe/MgO/Fe system, annealing at 570 K produces a sizable interdiffusion at the upper Fe/MgO interface, while at 470 K this process is inhibited. The XPS analysis of band alignment in heterostructures annealed at 470 K grown onto an intrinsic Ge substrate indicates that the Fermi level is placed at the center of the MgO gap and that the Schottky barrier height is 0.35{+-}0.1 eV, thus indicating a partial depinning of the Fermi level.

  3. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S.R.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M.; Whitlow, H.J. [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C.; Oestling, M. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1993-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  4. Astronomical large Ge immersion grating by Canon

    Science.gov (United States)

    Sukegawa, Takashi; Suzuki, Takeshi; Kitamura, Tsuyoshi

    2016-07-01

    Immersion grating is a powerful optical device for thee infrared high-resolution spectroscope. Germanium (GGe) is the best material for a mid-infrared immersion grating because of Ge has very large reflective index (n=4.0). On the other hands, there is no practical Ge immersion grating under 5umm use. It was very difficult for a fragile IR crystal to manufacture a diffraction grating precisely. Our original free-forming machine has accuracy of a few nano-meter in positioning and stability. We already fabricated the large CdZnTe immersion grating. (Sukegawa et al. (2012), Ikeda et al. (2015)) Wee are developing Ge immersion grating that can be a good solution for high-resolution infrared spectroscopy with the large ground-based/space telescopes. We succeeded practical Ge immersion grating with the grooved area off 75mm (ruled direction) x 119mm (grove width) and the blaze angle of 75 degrees. Our astronomical large Ge immersion grating has the grooved area of 155mm (ruled direction) x 41mmm (groove width) and groove pitch off 91.74um. We also report optical performance of astronomical large Ge immersion grating with a metal coating on the diffraction surface.

  5. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

    Science.gov (United States)

    Zhang, Liangliang; Li, Huanglong; Guo, Yuzheng; Tang, Kechao; Woicik, Joseph; Robertson, John; McIntyre, Paul C

    2015-09-23

    Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results.

  6. VizieR Online Data Catalog: Ge V and Ge VI oscillator strengths (Rauch+, 2012)

    Science.gov (United States)

    Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

    2012-08-01

    Calculated HFR oscillator strengths (log gf) and transition probabilities (gA, in 1/s) in Ge V (table2.dat) and Ge VI (table4.dat). CF is the cancellation factor as defined by Cowan (1981, 1981tass.book.....C). In columns 3 and 6, e is written for even and o for odd. (2 data files).

  7. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  8. Compton profile study of V3Ge and Cr3Ge

    Indian Academy of Sciences (India)

    Abstract. In this paper the results of a Compton profile study of two polycrystalline. A15 compounds, namely, V3Ge and Cr3Ge, have been reported. The measurements have been performed using 59.54 keV γ-rays from an 241Am source. The theoretical Compton profiles have been computed for both the compounds using ...

  9. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  10. Structure of GeSe4-In and GeSe5-In glasses

    Science.gov (United States)

    Kaban, I.; Jóvári, P.; Petkova, T.; Petkov, P.; Stoilova, A.; Hoyer, W.; Beuneu, B.

    2010-10-01

    (Ge0.2Se0.8)100 - xInx and (Ge0.17Se0.83)100 - xInx (x = 0, 5, 10, 15 at.%) chalcogenide glasses have been studied with high-energy x-ray diffraction, neutron diffraction and extended x-ray absorption spectroscopy at Ge, Se and In K-edges. The experimental data were modelled simultaneously with the reverse Monte Carlo simulation method. GeSe4/2 tetrahedra are shown to be the main structural units in the binary and ternary glasses investigated. Indium bonds to the excess Se atoms in the ternary Ge-Se-In glasses. While the majority of In atoms have three Se neighbours, some In atoms may be tetrahedrally coordinated by Se.

  11. Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots

    International Nuclear Information System (INIS)

    Talochkin, A. B.; Chistokhin, I. B.; Markov, V. A.

    2009-01-01

    Spectra of lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots, fabricated by molecular-beam epitaxy are studied. The photoresponse caused by optical transitions between hole levels of quantum dots and Si electronic states was observed in the energy range of 1.1-0.3 eV at T = 78 K. It was shown that the electronic states localized in the region of Si band bending near the Ge/Si interface mainly contribute to lateral photoconductivity. The use of the quantum box model for describing hole levels of quantum dots made it possible to understand the origin of peaks observed in the photoconductivity spectra. A detailed energy-level diagram of hole levels of quantum dots and optical transitions in Ge/Si structures with strained Ge quantum dots was constructed.

  12. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  13. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    International Nuclear Information System (INIS)

    Borisova, Svetlana

    2012-01-01

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  14. Competitiveness of organically grown cereals

    Directory of Open Access Journals (Sweden)

    Jaroslav Jánský

    2007-01-01

    Full Text Available The contribution is aimed at the assessment of recommended crop management practices of chosen cereals for organic farming. To increase competitiveness, these practices are modified depending on soil and climatic conditions, and on a way of production use. Furthermore, impacts of the recommended crop management practices on economics of growing chosen cereals are evaluated and compared with economic results obtained under conventional farming. It is assumed that achieved results will contribute to the increase in proportion of arable crops in the Czech Republic where organic production offer does not meet current demands.When evaluating results of growing individual cereal species in a selective set of organic farms, triticale, spelt and spring barley (in this ranking can be considered as profitable crops. Moreover, triticale and spelt have even higher gross margin under organic farming than under conventional farming (by 62 % in triticale. Oat brings losses, however, it is important for livestock production. Winter wheat seems to be also unprofitable since less grain is produced at lower imputs per hectare and only part of it is produced in quality “bio”, i.e. marketed for higher prices. Rye also brings losses under organic farming, particularly due to lower yields, similarly to the other mentioned cereals. Special cereal species that are still neglected in organic farming systems are of potential use. Durum wheat has vitreous kernels with a high content of quality gluten which is used for pasta production. It can be grown in the maize production area on fertile soils only.

  15. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  16. Ultra-low specific contact resistivity (1.4 × 10-9 Ω.cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

    Science.gov (United States)

    Wu, Ying; Luo, Sheng; Wang, Wei; Masudy-Panah, Saeid; Lei, Dian; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

    2017-12-01

    A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm-3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4 × 10-9 Ω.cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts.

  17. GE will finance 614-MW cogeneration plant

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The General Electric Power Funding Corporation, a unit of GE Capital, will provide up to $870 million in construction and permanent financing, and letters of credit to Cogen Technologies of Houston, Texas. The agreement will fund the construction of a 614-megawatt (MW), combined-cycle cogeneration plant to be built in Linden, New Jersey, and for the purchase of gas properties. The plant will be owned by Cogen Technologies. The financing is one of the largest packages ever for a cogeneration plant, GE said

  18. Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

    Science.gov (United States)

    Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi

    2017-04-01

    We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants.

  19. A Composite Structure of Cu3Ge/Ge/C Anode Promise Better Rate Property for Lithium Battery.

    Science.gov (United States)

    Liang, Jianwen; Li, Xiaona; Hou, Zhiguo; Jiang, Jun; Hu, Lei; Zhang, Wanqun; Zhu, Yongchun; Qian, Yitai

    2016-11-01

    Much effort has been made to search for high energy and high power density electrode materials for lithium ion batteries. Here, a composite structure among Ge, C and Cu3Ge in Cu3Ge/Ge/C materials with a high rate performance of lithium batteries has been reported. Such Cu3Ge/Ge/C composite is synthesized through the in-situ formation of Ge, C and Cu3Ge by one-pot reaction. Density function theory (DFT) calculations and electrochemical impedance spectroscopy (EIS) suggest a higher electron mobility of the hibrid Cu3Ge/Ge/C composites through the in-situ preparation. As a result, remarkable charge rate over 300 C (fast delithiated capability) and outstanding cycling stability (≈0.02% capacity decay per cycle for 500 cycles at 0.5 C) are achieved for the Cu3Ge/Ge/C composites anode. These Cu3Ge/Ge/C composites demonstrate another perspective to explore the energy storage materials and should provide a new pathway for the design of advanced electrode materials. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  1. Phase transitions in Ge-Sb phase change materials

    International Nuclear Information System (INIS)

    Raoux, Simone; Virwani, Kumar; Cabral, Cyril Jr.; Krusin-Elbaum, Lia; Jordan-Sweet, Jean L.; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-01-01

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T x ) also show an increase with Ge concentration closely tracking the measured values of T x . For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity

  2. Dynamics and energetics of Ge(001) dimers

    NARCIS (Netherlands)

    van Houselt, Arie; van Gastel, Raoul; Poelsema, Bene; Zandvliet, Henricus J.W.

    2006-01-01

    The dynamic behavior of surface dimers on Ge(001) has been studied by positioning the tip of a scanning tunneling microscope over single flip-flopping dimers and measuring the tunneling current as a function of time. We observe that not just symmetric, but also asymmetric appearing dimers exhibit

  3. Analytical response function for planar Ge detectors

    Science.gov (United States)

    García-Alvarez, Juan A.; Maidana, Nora L.; Vanin, Vito R.; Fernández-Varea, José M.

    2016-04-01

    We model the response function (RF) of planar HPGe x-ray spectrometers for photon energies between around 10 keV and 100 keV. The RF is based on the proposal of Seltzer [1981. Nucl. Instrum. Methods 188, 133-151] and takes into account the full-energy absorption in the Ge active volume, the escape of Ge Kα and Kβ x-rays and the escape of photons after one Compton interaction. The relativistic impulse approximation is employed instead of the Klein-Nishina formula to describe incoherent photon scattering in the Ge crystal. We also incorporate a simple model for the continuous component of the spectrum produced by the escape of photo-electrons from the active volume. In our calculations we include external interaction contributions to the RF: (i) the incoherent scattering effects caused by the detector's Be window and (ii) the spectrum produced by photo-electrons emitted in the Ge dead layer that reach the active volume. The analytical RF model is compared with pulse-height spectra simulated using the PENELOPE Monte Carlo code.

  4. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Energy Technology Data Exchange (ETDEWEB)

    Pillet, J.C., E-mail: jean-christophe.pillet@cea.fr [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Département Optique et Photonique, F38054 Grenoble (France); Pierre, F. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Service de Caractérisation des Matériaux et Composants, F38054 Grenoble (France); Jalabert, D. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec Grenoble F-38054 (France)

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed.

  5. Ultra high hole mobilities in a pure strained Ge quantum well

    International Nuclear Information System (INIS)

    Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

    2014-01-01

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

  6. Physical properties of (GaAs)1-x(Ge2)x: Influence of growth direction

    International Nuclear Information System (INIS)

    Rodriguez, A.G.; Navarro-Contreras, H.; Vidal, M.A.

    2001-01-01

    (GaAs) 1-x (Ge 2 ) x metastable alloys were epitaxially grown on (001), (111), (112), and (113) GaAs by rf magnetron sputtering. A different long-range order parameter behavior with Ge concentration is observed for each growth direction. This provides a direct evidence that growth direction affects the long-range order-disorder transition exhibited by these alloys. The epitaxial growth of these alloys was modeled by a Monte Carlo simulation. The good agreement between the experimental and modeled long-range order parameter evidences that atomic ordering in these alloys is ruled mainly by growth direction and the avoidance of the formation of 'wrong' atomic pairs of As-As and Ga-Ga, and not by thermodynamic factors. On the other hand, measurements of the optical gap and Raman scattering, show that the optical properties are governed by near-neighbor correlations and therefore by their short-range order. Hence, the substrate orientation and the long-range order have negligible effect on the optical properties. Fitting the experimental data of the optical gap, we obtained linear expressions that show the fundamental gap behavior with Ge concentration of some of these alloys at room temperature. For 0 0 (x)=1.43-2.99x eV and E 0 (x)=0.45+0.35x eV, respectively

  7. Ultra high hole mobilities in a pure strained Ge quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, O.A., E-mail: OAMironov@yahoo.co.uk [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); International Laboratory of High Magnetic Fields and Low Temperatures, 53-421 Wroclaw (Poland); Hassan, A.H.A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, Tripoli University, Tripoli (Libya); Morris, R.J.H.; Dobbie, A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Uhlarz, M. [High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Chrastina, D. [L-NESS Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como (Italy); Hague, J.P. [Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kiatgamolchai, S. [Department of Physics, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Beanland, R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Gabani, S. [Centre of Low Temperature Physics, Institute of Experimental Physics SAS, Košice (Slovakia); Berkutov, I.B. [B.I. Verkin Institute for Low Temperature Physics and Engineering of NAS of Ukraine, Kharkov (Ukraine); Helm, M.; Drachenko, O. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Myronov, M.; Leadley, D.R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-30

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10{sup 3} cm{sup 2}/V s was determined for a sheet density (p{sub s}) 9.8 × 10{sup 10} cm{sup −2} (by ME-MSA) and (3.9 ± 0.2) × 10{sup 3} cm{sup 2}/V s for a sheet density (p{sub s}) 5.9 × 10{sup 10} cm{sup −2} (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10{sup 3} cm{sup 2}/V s • Extremely high hole mobility of 1.1 × 10{sup 6} cm{sup 2}/V s at 12 K.

  8. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  9. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Wegscheider, W. [Walter Schottky Institut, Garching (Germany); Cerva, H. [Siemens AG, Research Lab., Muenchen (Germany)

    1993-05-01

    The relaxation behavior of short-period Si/Ge superlattices and Si{sub x}Ge{sub 1-x} alloy layers under compressive and tensile strain field is compared experimentally by means of transmission electron microscopy as well as theoretically on ethebasis of a half-loop dislocation nucleation mode. It was found that misfit dislocations in tensily strained layers grown on Ge(001) substrates are imperfect and of the 90{degrees} Shockley type provided some critical misfit f{sub c} is exceeded. Subsequent nucleation and glide of these partial dislocations on adjacent (111) glide planes leads to the formation of stacking faults and microtwins. In the low misfit regime (f

  10. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  11. Geïntegreerde woordeboekgebruik van vakwoordeboeke vir ...

    African Journals Online (AJOL)

    Sleutelwoorde: aanleerderwoordeboek, geamalgameerde makrostruk-tuur, geamalgameerde sentrale teks, geïntegreerde binneteks, geïnte-greerde woordeboekgebruik, kognitiewe funksie, kommunikatiewe funk-sie, laaistruktuur, leksikografies verlore generasie, leksikografiese funk-sies, multiveldvakwoordeboek, ...

  12. Properties of a-SiGe Thin Films on Glass by Co-Sputtering for Photovoltaic Absorber Application.

    Science.gov (United States)

    Shahahmadi, S A; Yeganeh, B; Huda, N; Asim, N; Hafidz, M; Alam, M M; Alothman, Z A; Sopian, K; Amin, N

    2015-11-01

    Non-hydrogenated amorphous Silicon-Germanium (a-SiGe) thin films were deposited at two different base pressures by RF magnetron co-sputtering. Moreover, an ex-situ thermal annealing was carried out to investigate the material properties to be suitable as the bottom cell of multi-junction solar cells. Compositional study of the films using EDX showed Ge-rich thin films with 75 atomic% of Ge. XRD reflection study implied that all samples were entirely amorphous in nature. However, a significant improvement of morphology possibly due to low base pressure was observed while thermal annealing caused peening and reduction of surface inhomogeneity in both as-sputtered films. UV-VIS-IR analysis confirmed the FESEM results. The highest transmittance was observed in the as-deposited sample grown at 4 x 10(-5) Torr, which however reduced after thermal annealing. Tauc's model was implied for band gap determination and band gap energy as low as 1.07 eV was found in the annealed sample grown at lower base pressure (4 x 10(-6) Torr). Electrical properties of films were investigated by Hall effect measurement system and results found the reduction of resistivity with the same trend of optical band gap energy.

  13. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse...

  14. BaGe(5): a new type of intermetallic clathrate.

    Science.gov (United States)

    Aydemir, Umut; Akselrud, Lev; Carrillo-Cabrera, Wilder; Candolfi, Christophe; Oeschler, Niels; Baitinger, Michael; Steglich, Frank; Grin, Yuri

    2010-08-18

    BaGe(5) constitutes a new type of intermetallic clathrate obtained by decomposition of clathrate-I Ba(8)Ge(43)(3) at low temperatures. The crystal structure consists of characteristic layers interconnected by covalent bonds. BaGe(5) is a semiconducting Zintl phase.

  15. High efficiency low cost GaAs/Ge cell technology

    Science.gov (United States)

    Ho, Frank

    1990-01-01

    Viewgraphs on high efficiency low cost GaAs/Ge cell technology are presented. Topics covered include: high efficiency, low cost GaAs/Ge solar cells; advantages of Ge; comparison of typical production cells for space applications; panel level comparisons; and solar cell technology trends.

  16. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  17. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Science.gov (United States)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  18. The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates

    International Nuclear Information System (INIS)

    Hammond, R.

    1998-09-01

    The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surface topography of limited-area, linearly graded Si 1-x Ge x virtual substrates has been investigated for the first time. A dramatic change in the relaxation mechanism of such buffer layers has been observed for depositions on Si mesa pillars of lateral dimensions of 10μm and below. For such depositions, misfit dislocations are able to extend, unhindered, and terminate at the edges of the growth zone. In this manner, orthogonal misfit dislocation interactions are avoided, yielding a surface free of the problematic surface cross-hatch roughening. However, as the lateral dimension of the growth zone is increased to 20μm, orthogonal misfit interactions occur and relaxation is dominated by the Modified Frank-Read (MFR) multiplication mechanism. The resulting surface morphology shows a pronounced surface cross-hatch roughening. It is proposed that such cross-hatch roughening is a direct consequence of the cooperative stress fields associated with the MFR mechanism. It is postulated that the method of limited-area, linearly graded buffer layers provides a unique opportunity, by which 'ideal' virtual substrates, free of surface cross-hatch and threading dislocations, may be produced to any Ge content. In addition, a unique method by which the electrical performance of low temperature, strained layer depositions may be optimised is discussed. The method relies on the elimination of as-grown lattice imperfections via a post growth thermal anneal treatment. A 25-fold increase in low temperature hole mobility of a Si 0.5 Ge 0.5 /Si 0.7 Ge 0.3 heterostructure has been demonstrated using a 30minute, 750 deg C in-situ, post growth anneal. (author)

  19. ATLAS 750 GeV Analysis

    CERN Document Server

    Wang, Fuquan; The ATLAS collaboration

    2016-01-01

    These slides are for BEACH 2016 presentation about 750 GeV searches at the ATLAS experiment with the 3.2 $\\text{fb}^{-1}$ $\\sqrt{s}$=13 TeV data collected in year 2015. The results from $\\gamma\\gamma$ and $Z\\gamma$ final states are summarized. For $\\gamma\\gamma$ analysis, the local significance is 3.9 $\\sigma$ for the spin-0 selection and 3.8 $\\sigma$ for spin-2 selection at 750 GeV, with global significance both at 2.1 $\\sigma$. For the $Z\\gamma$ analysis, both the leptonic and hadronic decays of the $Z$ boson are studied and no excess at the signal region is observed.

  20. The 400 GeV proton synchrotron

    International Nuclear Information System (INIS)

    1976-05-01

    A general account is given of the 400-GeV proton synchrotron, known as Super Proton Synchrotron (SPS), of the European Organization for Nuclear Research (CERN) at Geneva. A brief chapter on the history of the project covers the steps leading to the earlier plan for a 300-GeV accelerator at a new CERN laboratory elsewhere in Europe, abandoned in 1971 in favour of the present machine, and the progress of construction of the latter. The general features of the SPS design are outlined, illustrated by an aerial view of the CERN site, a plan of the SPS, and interior views of the SPS ring tunnel and main control room. (WSN)

  1. Neutron scattering on molten Ge-Sn-Te alloys

    Science.gov (United States)

    Halm, Th; Hinz, W.; Hoyer, W.

    1995-01-01

    Three molten ternary Ge-Sn-Te alloys lying on the quasibinary line Ge-SnTe, and the binary equiatomic alloys SnTe and GeTe have been investigated by neutron "time-of-flight" experiments. Published thermodynamic results are interpreted in terms of the coexistence of SnTe and Ge microgroupings in the melt. Using the experimental obtained data of the binary liquid alloy Sn50Te50 and of liquid Ge the structure factors of the ternary melts are calculated on the base of a microheterogeneous model.

  2. GRETEL, Ge(Li) Gamma Spectra Unfolding

    International Nuclear Information System (INIS)

    1975-01-01

    1 - Nature of physical problem solved: The program performs the quantitative analysis of gamma-ray spectra obtained by Ge(Li) detectors, using special libraries which are prepared for each particular problem. 2 - Method of solution: The computer routines which detect and evaluate peak areas perform the following operations: - local smoothing of the spectrum; - first derivative of the smoothed spectrum, - peak location according to the change of sign of the first derivative; - computation of the net area of each peak found

  3. SiGe/Si electronics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, K.L.; Karunasiri, R.P.G. [Univ. of California, Los Angeles, CA (United States)

    1993-05-01

    Recently, there is an increased interest in the use of SiGe layered material for integration with Si technology. SiGe offers the opportunity for the first time to realize the advantages of heterojunctions in Si-based technology. In this article, the present status of the SiGe epitaxial growth techniques will be discussed from the point of view of device application. New directions will be presented. Next, electronic devices to be reviewed include bipolars and field effect transistors. The progress of tunneling devices will also be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. These will include Si-based detectors and modulators based on interband and intersubband transitions. One of the focuses will be the normal incidence operation for intersubband devices. Finally, the current status in the quest of light emitters will be briefly addressed. 44 refs., 15 figs.

  4. Multiple band structures in 70Ge

    Science.gov (United States)

    Haring-Kaye, R. A.; Morrow, S. I.; Döring, J.; Tabor, S. L.; Le, K. Q.; Allegro, P. R. P.; Bender, P. C.; Elder, R. M.; Medina, N. H.; Oliveira, J. R. B.; Tripathi, Vandana

    2018-02-01

    High-spin states in 70Ge were studied using the 55Mn(18O,p 2 n ) fusion-evaporation reaction at a beam energy of 50 MeV. Prompt γ -γ coincidences were measured using the Florida State University Compton-suppressed Ge array consisting of three Clover detectors and seven single-crystal detectors. An investigation of these coincidences resulted in the addition of 31 new transitions and the rearrangement of four others in the 70Ge level scheme, providing a more complete picture of the high-spin decay pattern involving both positive- and negative-parity states with multiple band structures. Spins were assigned based on directional correlation of oriented nuclei ratios, which many times also led to unambiguous parity determinations based on the firm assignments for low-lying states made in previous work. Total Routhian surface calculations, along with the observed trends in the experimental kinematic moment of inertia with rotational frequency, support the multiquasiparticle configurations of the various crossing bands proposed in recent studies. The high-spin excitation spectra predicted by previous shell-model calculations compare favorably with the experimental one determined from this study.

  5. The system BaOGeO 2 at high pressures and temperatures, with special reference to high-pressure transformations in BaGeO 3, BaGe 2O 5, and Ba 2Ge 5O 12

    Science.gov (United States)

    Ozima, Mituko; Susaki, Jun-Ichi; Akimoto, Syun-Iti; Shimizu, Yoshio

    1982-10-01

    Phase relations in the system BaOGeO 2 were investigated in the pressure range 20-70 kbar in the temperature range 750-1200°C. Several new phases were identified in this system: an atmospheric phase of BaGe 2O 5 (monoclinic BaGe 2O 5 I), two high-pressure phases of BaGe 2O 5 (monoclinic BaGe 2O 5 II and tetragonal BaGe 2O 5 III), and a high-pressure phase of Ba 2Ge 5O 12. The phase boundary curve between BaGe 2O 5 II and BaGe 2O 5 III was preliminarily determined as P(kbar) = 7.7 + 0.047 T (°C). The high-pressure phases of BaGeO 3, which were previously reported by Y. Shimizu, Y. Syono, and S. Akimoto ( High Temp.-High Pressures2, 113 (1970)) in the pressure range 15-95 kbar, were interpreted to be not single-phase materials but complicated mixtures of more than two phases in the system BaOGeO 2. X-Ray powder diffraction data for the new compounds synthesized in this study are given.

  6. [Ge2](4-) Dumbbells with Very Short Ge-Ge Distances in the Zintl Phase Li3NaGe2: A Solid-State Equivalent to Molecular O2.

    Science.gov (United States)

    Scherf, Lavinia M; Karttunen, Antti J; Pecher, Oliver; Magusin, Pieter C M M; Grey, Clare P; Fässler, Thomas F

    2016-01-18

    The novel ternary Zintl phase Li3NaGe2 comprises alkali-metal cations and [Ge2](4-) dumbbells. The diatomic [Ge2](4-) unit is characterized by the shortest Ge-Ge distance (2.390(1) Å) ever observed in a Zintl phase and thus represents the first Ge=Ge double bond under such conditions, as also suggested by the (8-N) rule. Raman measurements support these findings. The multiple-bond character is confirmed by electronic-structure calculations, and an upfield (6)Li NMR shift of -10.0 ppm, which was assigned to the Li cations surrounded by the π systems of three Ge dumbbells, further underlines this interpretation. For the unperturbed, ligand-free dumbbell in Li3NaGe2, the π- bonding py and pz orbitals are degenerate as in molecular oxygen, which has singly occupied orbitals. The partially filled π-type bands of the neat solid Li3NaGe2 cross the Fermi level, resulting in metallic properties. Li3NaGe2 was synthesized from the elements as well as from binary reactants and subsequently characterized crystallographically. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Thermal conductivity measurement of Ge-Si{sub x}Ge{sub 1-x} core-shell nanowires using suspended microdevices

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun Joon; Seol Jae Hun [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Nah, Jung Hyo [Chonnam National University, Gwangju (Korea, Republic of); Tutuc, Emanuel [The University of Texas at Austin, Austin (Korea, Republic of)

    2015-10-15

    Theoretical calculations suggest that the thermoelectric figure of merit (ZT) can be improved by introducing a core-shell heterostructure to a semiconductor nanowire because of the reduced thermal conductivity of the nanowire. To experimentally verify the decrease in thermal conductivity in core-shell nanowires, the thermal conductivity of Ge-SixGe1-x core-shell nanowires grown by chemical vapor deposition (CVD) was measured using suspended microdevices. The silicon composition (Xsi) in the shells was measured to be about 0.65, and the remainder of the germanium in the shells was shown to play a role in decreasing defects originating from the lattice mismatch between the cores and shells. In addition to the standard four-point current- voltage (I-V) measurement, the measurement configuration based on the Wheatstone bridge was attempted to enhance the measurement sensitivity. The measured thermal conductivity values are in the range of 9-13 W/mK at room temperature and are lower by approximately 30 than that of a germanium nanowire with a comparable diameter.

  8. Substitutionality of Ge atoms in ion implanted AlSb

    International Nuclear Information System (INIS)

    Yu, K.M.; Moll, A.J.; Chan, N.; Walukiewicz, W.; Becla, P.

    1995-01-01

    The substitution of Ge atoms into ion implanted AlSb is investigated by extended x-ray absorption fine structure spectroscopy. Our results reveal that in the as-implanted material, the implanted Ge atoms are equally distributed between two specific sites, one surrounded by Al atoms and the other surrounded by Sb atoms. After annealing at 750 degree C for 5 s, the coordination number of the Ge atoms increases from ∼3 to ∼4 indicating solid phase regrowth of the implantation induced amorphous surface layer. Moreover, in the annealed AlSb, the substitution of Ge atoms into the Al sublattice dominates with an estimated Ge Al :[Ge Sb ]∼0.8:0.2. These results suggest that Ge atoms act preferentially as donor species in AlSb

  9. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    International Nuclear Information System (INIS)

    Chawanda, A.; Coelho, S.M.M.; Auret, F.D.; Mtangi, W.; Nyamhere, C.; Nel, J.M.; Diale, M.

    2012-01-01

    Highlights: ► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I–V, C–V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.

  10. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  11. Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Zhaofeng [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA; Perea, Daniel E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Yoo, Jinkyoung [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA; He, Yang [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA; Colby, Robert J. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Barker, Josh E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Gu, Meng [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Mao, Scott X. [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA; Wang, Chongmin [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Picraux, S. T. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA; McCartney, Martha R. [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

    2016-09-13

    Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region. 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.

  12. Hysteretic electrical transport in BaTiO{sub 3}/Ba{sub 1−x}Sr{sub x}TiO{sub 3}/Ge heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ngai, J. H.; Kumah, D. P.; Walker, F. J. [Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, 15 Prospect Street, New Haven, Connecticut 06520-8284 (United States); Ahn, C. H. [Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, 15 Prospect Street, New Haven, Connecticut 06520-8284 (United States); Department of Mechanical Engineering and Materials Science, Yale University, 10 Hillhouse Avenue, New Haven, Connecticut 06520-8267 (United States)

    2014-02-10

    We present electrical transport measurements of heterostructures comprised of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} epitaxially grown on Ge. Sr alloying imparts compressive strain to the BaTiO{sub 3}, which enables the thermal expansion mismatch between BaTiO{sub 3} and Ge to be overcome to achieve c-axis oriented growth. The conduction bands of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.

  13. Investigation of the interactions of the components in the Sm-Pd-Ge system

    International Nuclear Information System (INIS)

    Kurenbaeva, J.M.; Seropegin, Yu.D.; Nikiforov, V.N.

    1998-01-01

    A variety of physicochemical analysis techniques have been employed in constructing the isothermal section of the phase diagram of the Sm-Pd-Ge system at 870 K. Several new ternary compounds have been found: Sm 3 Pd 20-18.5 Ge 6-7.5 , SmPd 2.50-1.75 Ge 1.50-2.25 , Sm 2 Pd 3 Ge 5 , Sm 2 PdGe 6 , SmPd 3 Ge, SmPd 2 Ge, SmPdGe 2 , SmPdGe, SmPd 0.8-0.5 Ge 1.2-1.5 , and Sm 2 PdGe. The temperature dependencies of the specific resistance were investigated for Sm 20 Pd 35 Ge 45 , Sm 20 Pd 40 Ge 40 , Sm 20 Pd 45 Ge 35 , and Sm 3 Pd 20 Ge 6 . (orig.)

  14. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  15. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

    International Nuclear Information System (INIS)

    Stesmans, A.; Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-01-01

    The hydrogen interaction kinetics of the GeP b1 defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ∼7 × 10 12  cm −2 at the SiGe/SiO 2 interfaces of condensation grown (100)Si/a-SiO 2 /Ge 0.75 Si 0.25 /a-SiO 2 structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP b1 -H formation) in molecular hydrogen (∼1 atm) and reactivation (GeP b1 -H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP b1  + H 2  → GeP b1 H + H and GeP b1 H → GeP b1  + H, which are found to be characterized by the average activation energies E f  = 1.44 ± 0.04 eV and E d  = 2.23 ± 0.04 eV, and attendant, assumedly Gaussian, spreads σE f  = 0.20 ± 0.02 eV and σE d  = 0.15 ± 0.02 eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t a  ∼ 35 min, it is found that even for the optimum treatment temperature ∼380 °C, only ∼60% of the GeP b1 system can be electrically silenced, still far remote from device grade level. This

  16. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  17. Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

    Science.gov (United States)

    Matsui, Hideki; Ishibe, Takafumi; Terada, Tsukasa; Sakane, Shunya; Watanabe, Kentaro; Takeuchi, Shotaro; Sakai, Akira; Kimura, Shigeru; Nakamura, Yoshiaki

    2018-01-01

    The core-shell nanostructure of epitaxial Fe3O4 nanocrystals over Ge nuclei showed a large Off/On resistance ratio (˜100), which was the largest value in Fe3O4 materials. The nanocrystals with an average diameter of ˜20 nm were grown epitaxially on Si substrates, whose areal density was high (˜1011 cm-2), and each nanocrystal was isolated from each other. The electrical measurement of the individual isolated nanocrystals by conductive-atomic force microscopy showed the bipolar-type resistive switching in local voltage-current curves, depending on the Fe-O composition. It was also revealed that activation sites for resistive switching were the Fe3O4/Ge interfaces, where electric-field-induced compositional variation caused large resistive changes. This demonstrated the possibility of developing resistance random access memory devices based on ubiquitous materials.

  18. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  19. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications

    Science.gov (United States)

    Wang, Suyuan; Zheng, Jun; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2017-11-01

    We present the device simulations of analog and radio frequency (RF) performances of four double-gate pocket n-type tunneling field-effect transistors (NTFETs). The direct current (DC), analog and RF performances of the Ge-homo, GeSn-homo, GeSn/Ge and GeSn/GeSiSn NTFETs, are compared. The GeSn NTFETs greatly improve the on-state current (ION) and average subthreshold slope (SS), when compared with the Ge NTFET. Moreover, the GeSn/GeSiSn NTFET has the largest intrinsic gain (Av), and exhibits a suppressed ambipolar behavior, improved cut-off frequency (fT), and gain bandwidth product (GBW), according to the analyzed analog and RF figures of merit (FOM). Therefore, it can be concluded that the GeSn/GeSiSn NTFET has great potential as a promising candidate for the realization of future generation low-power analog/RF applications.

  20. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... and for the mass-velocity term have been determined in perturbation calculations. Treatment of the spin-orbit coupling has been included. The ground state of Ge-2 is derived as 0(g)(+)((3)Sigma(g)(-)) with equilibrium distance 2.422 Angstrom, and vibrational frequency 270 cm(-1). The spectroscopic constants of 15...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

  1. HPC4Energy Final Report : GE Energy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-02-25

    Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

  2. Structure of Ag, Fe and Ge microclusters

    International Nuclear Information System (INIS)

    Montano, P.A.; Shenoy, G.K.; Schulze, W.

    1989-01-01

    The structures of Ag, Fe and Ge microclusters were determined using EXAFS. The measurements were performed over a wide range of clusters sizes. The clusters were prepared using the gas aggregation technique and isolated in solid argon at 4.2 K. The measurements were performed at the National Synchrotron Light Source (NSLS) at beam line X-18B. A strong contraction of the interatomic distances was observed for Ag dimers and multimers. Silver clusters larger than 12 A mean diameter show a small contraction of the nn distance and a structure consistent with an fcc lattice. By contrast clusters smaller than 12 A show the presence of a small expansion and a strong reduction or absence of nnn in the EXAFS signal. This points towards a different crystallographic structure for Ag microclusters with diameter less than 12 A. In iron clusters we observe a gradual reduction of the nn distance as the cluster size decreases. The interatomic distance for iron dimers was determined to be 1.94 A, in good agreement with earlier measurements. The iron microclusters show a bcc structure down to a mean diameter of 9 A. Iron clusters with 9 A mean diameter show a structure inconsistent with a bcc lattice. The new structure is consistent with an fcc or hcp lattice. The measurements on Ge clusters show the presence of only nearest neighbors. There was clear evidence of temporal annealing as determined by variations in the near edge structure of the K-absorption edge. Absorption edge measurements were also performed for free Ge clusters travelling perpendicular to the direction of the synchrotron radiation beam. The measurements performed on the free clusters were consistent with those obtained for matrix isolated clusters. (orig.)

  3. High spin spectroscopy of 70Ge

    International Nuclear Information System (INIS)

    Kumar Raju, M.; Sugathan, P.; Seshi Reddy, T.; Thirumala Rao, B.V.; Madhusudhana Rao, P.V.; Muralithar, S.; Singh, R.P.; Bhowmik, R.K.

    2011-01-01

    Structure of nuclei in mass 70 region is of interest due to presence of a variety of complex phenomenon. In these nuclei rapid change of nuclear shape with proton and neutron numbers, spin and excitation energy. Valance nucleons in f-p-g shell configuration will drive the nuclei towards high deformations. Relatively large values of quadrupole deformation are evident in the even-even nuclei in this region. Present study is aimed to explore the high spin structure of the 70 Ge nucleus. A negative parity structure was reported in an earlier study

  4. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    Science.gov (United States)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-06-01

    Atomic structures of Ge25Sb15S60 and Ge35Sb5S60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A˚-1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A˚ are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts.

  5. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  6. Nutrient management of soil grown crops

    NARCIS (Netherlands)

    Sonneveld, C.; Voogt, W.

    2009-01-01

    The management of the fertilization of soil grown crops in greenhouses can be distinguished in the addition of fertilizers before cultivation, the base dressing and those added during the cultivations period of the crops, the top dressing. The growing period of the crops in greenhouse production

  7. Recrystallization phenomena of solution grown paraffin dendrites

    NARCIS (Netherlands)

    Hollander, F.F.A.; Hollander, F.; Stasse, O.; van Suchtelen, J.; van Enckevort, W.J.P.

    2001-01-01

    Paraffin crystals were grown from decane solutions using a micro-Bridgman set up for in-situ observation of the morphology at the growth front. It is shown that for large imposed velocities, dendrites are obtained. After dendritic growth, aging or recrystallization processes set in rather quickly,

  8. An Investigation of ELDRS in Different SiGe Processes

    Science.gov (United States)

    Li, Pei; He, Chaohui; Guo, Hongxia; Guo, Qi; Zhang, Jinxin; Liu, Mohan

    2017-05-01

    Enhanced low dose rate sensitivity (ELDRS) in different process Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate irradiations are performed to evaluate the ELDRS of SiGe HBTs manufactured by Tsinghua University (THU). THU SiGe HBTs experience significantly low dose rate sensitivity than that of IBM 8HP SiGe HBTs and behave a “true” dose rate effect. TCAD models were used to explicate the microcosmic structure in THU and IBM 8HP SiGe HBTs. Comparison and discussion show that different SiGe processes may involve different HBT structures and device designs which are the critical influence of ELDRS effect. The different responses of ELDRS should be first attributed to the device structure and design in nature, particularly the geometry of emitter-base junction and the isolation structure.

  9. Growth and characterization of Ge nano-structures on Si(113) by adsorbate-mediated epitaxy; Wachstum und Charakterisierung von Ge-Nanostrukturen auf Si(113) durch Adsorbat-modifizierte Epitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Clausen, T.

    2006-11-15

    In the work presented here Ge nano-structures on Si(113) substrates have been grown by adsorbate-mediated epitaxy at sample temperatures between 400 C and 700 C. The Ge nano-islands and nano-layers have been investigated regarding their atomic reconstruction, morphology, strain state, chemical composition and defect structure. Various in-situ and ex-situ experimental techniques have been used, as there are low-energy electron diffraction, low-energy electron microscopy, X-ray photoemission electron microscopy, spot profile analysis low-energy electron diffraction, grazing incidence X-ray diffraction, scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. On a clean Si(113) surface Ge preferentially nucleates at surface step edges and forms a wetting layer exhibiting a Ge-(2 x 2) surface reconstruction. With increasing growth temperature the Ge islands are elongated in the [33 anti 2] direction. Simultaneously, the average island size increases with decreasing island density. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. At 600 C the Si concentration of the islands amounts to about 41% and the residual lattice strain of the islands is found to about 23 %. The adsorption of Gallium on a clean Si(113) substrate leads to the formation of well ordered surface facets in the [1 anti 10] direction with a periodicity of about 43 nm in the [33 anti 2] direction. From reciprocal space maps in different ({kappa} {sub perpendicular} {sub to} -{kappa} {sub parallel}) planes both facet angles are determined to be about 9.8 with respect to the [113] direction. Thus the facet orientations are identified to be (112) and (115), showing (6 x 1) and (4 x 1) surface reconstructions, respectively. Ge deposition on the faceted Si(113) leads to a high density of ordered 3D Ge nano-islands beaded at the surface facets. The size of these islands is

  10. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping

    Czech Academy of Sciences Publication Activity Database

    Žďánský, Karel; Zavadil, Jiří; Procházková, Olga; Gladkov, Petar

    B80, 1/3 (2001), s. 10-13 ISSN 0921-5107. [EXMATEC 2000 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /5./. Heraklion, 21.05.2000-24.05.2000] R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074 Institutional research plan: CEZ:AV0Z2067918 Keywords : semiconductor materials * luminescence Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  11. On the Potential Application of the Wrinkled SiGe/SiGe Nanofilms

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Wang, W.; Ch.

    2016-01-01

    Roč. 6, č. 2 (2016), s. 19-23 ISSN 2160-049X Institutional support: RVO:61388998 Keywords : wrinkled SiGe nanofilms * terahertz radiation * terahertz gap Subject RIV: BE - Theoretical Physics http://www.scirp. org /journal/wjm,http://dx. doi . org /10.4236/wjm.2016.62003

  12. Dumbbells of five-connected Ge atoms and superconductivity in CaGe3.

    Science.gov (United States)

    Schnelle, Walter; Ormeci, Alim; Wosylus, Aron; Meier, Katrin; Grin, Yuri; Schwarz, Ulrich

    2012-05-21

    CaGe(3) has been synthesized at high-pressure, high-temperature conditions. The atomic pattern comprises intricate germanium layers of condensed moleculelike dimers. Below T(c) = 6.8 K, type II superconductivity with moderately strong electron-phonon coupling is observed.

  13. Room temperature ferromagnetic Cr doped Ge/GeOx core-shell nanowires.

    Science.gov (United States)

    Katkar, Amar S; Gupta, Shobhnath P; Seikh, Md Motin; Chen, Lih-Juann; Walke, Pravin S

    2018-03-19

    The Cr doped tunable thickness core-shell Ge/GeOx nanowires were synthesized and characterized using X-ray diffraction, FESEM, TEM, EDS, XPS and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core-shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core-shell thickness and intriguing room temperature ferromagnetism is realized only in core-shell nanowires. The magnetization decreases with increase in shell thickness and practically ceases to exist when there is no core. These nanowires shows high Curie temperature (TC>300 K) remarkably with the dominating values of its magnetic remanence (MR) and coercivity (HC) as compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr doped Ge/GeOX core-shell nanowires have potential to use as a hard magnet for forthcoming spintronic devices, owing to their higher characteristic values of FM ordering. © 2018 IOP Publishing Ltd.

  14. Commissioning and Operation of 12 GeV CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Freyberger, Arne P. [Jefferson Lab., Newport News, VA (United States)

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  15. A 100 GeV SLAC Linac

    International Nuclear Information System (INIS)

    Farkas, Zoltan D

    2002-01-01

    The SLAC beam energy can be increased from the current 50 GeV to 100 GeV, if we change the operating frequency from the present 2856 MHz to 11424 MHz, using technology developed for the NLC. We replace the power distribution system with a proposed NLC distribution system as shown in Fig. 1. The four 3 meter s-band 820 nS fill time accelerator sections are replaced by six 2 meter x-band 120 nS fill time sections. Thus the accelerator length per klystron retains the same length, 12 meters. The 4050 65MW-3.5(micro)S klystrons are replaced by 75MW-1.5(micro)S permanent magnet klystrons developed here and in Japan. The present input to the klystrons would be multiplied by a factor of 4 and possibly amplified. The SLED [1] cavities have to be replaced. The increase in beam voltage is due to the higher elastance to group velocity ratio, higher compression ratio and higher unloaded to external Q ratio of the new SLED cavities. The average power input is reduced because of the narrower klystron pulse width and because the klystron electro-magnets are replaced by permanent magnets

  16. Magnetic phase diagrams of UNiGe

    International Nuclear Information System (INIS)

    Nakotte, H.; Torikachvili, M.S.; Lacerda, A.H.

    1998-01-01

    UNiGe undergoes two magnetic transitions in zero field. Here, the magnetic diagrams of UNiGe for B parallel b and B parallel c are reported. We performed temperature scans of the magnetization in static magnetic fields up to 19.5 T applied along the b and c axes. For both orientations three magnetic phases have been identified in the B-T diagrams. We confirmed the previously reported phase boundaries for B parallel c, and in addition we determined the location of the phase boundaries for B parallel b. We discuss a possible relationship of the two zero-field antiferromagnetic phases (commensurate: T<42 K; incommensurate: 42 K< T<50 K) and the field-induced phase, which at low temperatures, occurs between 18 and 25 T or 4 and 10 T for B parallel b or B parallel c, respectively. Finally, we discuss the field dependence of the electronic contribution γ to the specific heat for B parallel c up to 17.5 T, and we find that its field dependence is similar to the one found in more itinerant uranium compounds. (orig.)

  17. Magnetic phase diagrams of UNiGe

    International Nuclear Information System (INIS)

    Nakotte, H.; Hagmusa, I.H.; Klaasse, J.C.P.; Hagmusa, I.H.; Klaasse, J.C.P.

    1997-01-01

    UNiGe undergoes two magnetic transitions in zero field. Here, the magnetic diagrams of UNiGe for B parallel b and B parallel c are reported. We performed temperatures scans of the magnetization in static magnetic fields up to 19.5T applied along the b and c axes. For both orientations 3 magnetic phases have been identified in the B-T diagrams. We confirmed the previously reported phase boundaries for B parallel c, and in addition we determined the location of the phase boundaries for B parallel b. We discuss a possible relationship of the two zero-field antiferromagnetic phases (commensurate: T<42K; incommensurate: 42K< T<50K) and the field-induced phase, which, at low temperatures, occurs between 18 and 25T or 4 and 10T for B parallel b or B parallel c, respectively. Finally, we discuss the field dependence of the electronic contribution γ to the specific heat for B parallel c up to 17.5T, and we find that its field dependence is similar to the one found in more itinerant uranium compounds

  18. Density measurement of amorphous SixGe1-x alloys

    International Nuclear Information System (INIS)

    Laaziri, K.; Roorda, S.; Cliche, L.

    1994-01-01

    The atomic density of amorphous Si x Ge 1-x alloys (x = 1, 0.85, 0.67, 0.50, 0.20 and 0) has been measured. Mono-crystalline Si x Ge 1-x layers were implanted with 1.50-2.75 MeV Si 2+ and Ge 2+ ions to produce the amorphous material. Using surface profilometry and RBS/channeling, it was found that amorphous alloys are less dense than the crystalline alloys, and that Vegard's law underestimates the a-Si x Ge 1-x density. (orig.)

  19. The first acceleration to 300 GeV

    CERN Multimedia

    CERN PhotoLab

    1976-01-01

    After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

  20. Thermal stability of germanium-tin (GeSn) fins

    Science.gov (United States)

    Lei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Masudy-Panah, Saeid; Tan, Chuan Seng; Tok, Eng Soon; Gong, Xiao; Yeo, Yee-Chia

    2017-12-01

    We investigate the thermal stability of germanium-tin (Ge1-xSnx) fins under rapid thermal annealing in N2 ambient. The Ge1-xSnx fins were formed on a GeSn-on-insulator substrate and were found to be less thermally stable than blanket Ge1-xSnx films. The morphology change and material quality of the annealed Ge1-xSnx fin are investigated using scanning electron microscopy, Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. Obvious degradation of crystalline quality of the Ge0.96Sn0.04 fin was observed, and a thin Ge layer was formed on the SiO2 surface near the Ge0.96Sn0.04 fin region after 500 °C anneal. A model was proposed to explain the morphology change of the Ge0.96Sn0.04 fin.

  1. Anomalous temperature-induced volume contraction in GeTe

    OpenAIRE

    Chatterji, Tapan; Kumar, C. M. N.; Wdowik, Urszula D.

    2015-01-01

    The recent surge of interest in phase-change materials GeTe, Ge2Sb2Te5, and related compounds motivated us to revisit the structural phase transition in GeTe in more detail than was done before. The rhombohedral-to-cubic ferroelectric phase transition in GeTe has been studied using high-resolution neutron powder diffraction on a spallation neutron source. We determined the temperature dependence of the structural parameters in a wide temperature range extending from 309 to 973 K. The results ...

  2. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Lawrence Berkeley Lab., CA

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

  3. Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

    Science.gov (United States)

    Lu, Xiangmeng; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro

    2018-04-01

    We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample with those of reference (113)A and (113)B GaAs substrates. The interfaces of GaAs/Ge/GaAs were evaluated at the atomic level by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping. Defect-free GaAs/Ge/GaAs heterostructures were observed in STEM images and the sublattice lattice was directly seen through atomic arrangements in EDX mapping. A GaAs/AlAs coupled multilayer cavity with a sublattice reversal structure was grown on the (113)B GaAs substrate after the confirmation of sublattice reversal. Smooth GaAs/AlAs interfaces were formed over the entire region of the coupled multilayer cavity structure both below and above the Ge layer. Two cavity modes with a frequency difference of 2.9 THz were clearly observed.

  4. Low-temperature (<200 oC solid-phase crystallization of high substitutional Sn concentration (∼10% GeSn on insulator enhanced by weak laser irradiation

    Directory of Open Access Journals (Sweden)

    Kenta Moto

    2017-07-01

    Full Text Available Low temperature (8% on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent thermal annealing is developed. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with weak laser fluence, complete crystallization of GeSn films is achieved by subsequent thermal annealing at ∼170 oC without incubation time. In addition, the quality of GeSn films obtained by this method is higher compared with conventional growth techniques such as melting growth by pulsed laser annealing or solid-phase crystallization (SPC without pre-laser irradiation. Substitutional Sn concentrations in the grown layers estimated by Raman spectroscopy measurements are 8-10%, which far exceed thermal equilibrium solid-solubility of Sn in Ge (∼2%. These phenomena are explained by generation of a limited number of nuclei by weak laser irradiation and lateral SPC by subsequent thermal annealing. This method will facilitate realization of next-generation high performance devices on flexible insulating substrates.

  5. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  6. Influence of interface potential on the effective mass in Ge nanostructures

    International Nuclear Information System (INIS)

    Barbagiovanni, E. G.; Cosentino, S.; Terrasi, A.; Mirabella, S.; Lockwood, D. J.; Costa Filho, R. N.

    2015-01-01

    The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism, we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism, we determine the length scale over which the interface potential influences the effective mass

  7. Piezoresistance of Silicon and Strained Si0.9Ge0.1

    DEFF Research Database (Denmark)

    Richter, Jacob; Hansen, Ole; Larsen, A. Nylandsted

    2005-01-01

    We present experimentally obtained results of the piezoresistive effect in p-type silicon and strained Si0.9Ge0.1. Today, strained Si1-xGex is used for high speed electronic devices. This paper investigates if this area of use can be expanded to also cover piezoresistive micro electro mechanical...... systems (MEMS) devices. The measurements are performed on microfabricated test chips where resistors are defined in layers grown by molecular beam epitaxy on (0 0 1) silicon substrates. A uniaxial stress along the [1 1 0] direction is applied to the chip, with the use of a four point bending fixture....... The investigation covers materials with doping levels of N-A = 10(18) cm(-3) and NA = 1019 cm(-3), respectively. The results show that the pi(66) piezoresistive coefficient in strained Si0.9Ge0.1 is approximately 30% larger than the comparable pi(44) piezoresistive coefficient in silicon at a doping level of N...

  8. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  9. Quantitative analysis of Si/SiGeC superlattices using atom probe tomography.

    Science.gov (United States)

    Estivill, Robert; Grenier, Adeline; Duguay, Sébastien; Vurpillot, François; Terlier, Tanguy; Barnes, Jean-Paul; Hartmann, Jean-Michel; Blavette, Didier

    2015-12-01

    SiGe and its alloys are used as key materials in innovative electronic devices. The analysis of these materials together with the localisation of dopants and impurities on a very fine scale is of crucial importance for better understanding their electronic properties. The quantification of carbon and germanium in an as-grown Si/SiGeC superlattice has been investigated using Atom Probe Tomography as a function of analysis conditions and sample anneal temperature. The mass spectrum is heavily influenced by the analysis conditions and chemical identification is needed. It was found that quantitative results are obtained using a intermediate electric field. The evaporation of carbon ions shows a strong spatial and temporal correlation. A series of annealed samples have been analysed, presenting an inhomogeneous carbon distribution, appearing in the shape of small clusters. These findings confirm previous results and give a better understanding of the processes occurring in these technologically important materials. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.

    Science.gov (United States)

    Verbitskiy, N I; Fedorov, A V; Profeta, G; Stroppa, A; Petaccia, L; Senkovskiy, B; Nefedov, A; Wöll, C; Usachov, D Yu; Vyalikh, D V; Yashina, L V; Eliseev, A A; Pichler, T; Grüneis, A

    2015-12-07

    The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.

  11. Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation

    Science.gov (United States)

    Verbitskiy, N. I.; Fedorov, A. V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D. Yu.; Vyalikh, D. V.; Yashina, L. V.; Eliseev, A. A.; Pichler, T.; Grüneis, A.

    2015-01-01

    The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology. PMID:26639608

  12. Negative thermal expansion and magnetocaloric effect in Mn-Co-Ge-In thin films

    Science.gov (United States)

    Liu, Y.; Qiao, K. M.; Zuo, S. L.; Zhang, H. R.; Kuang, H.; Wang, J.; Hu, F. X.; Sun, J. R.; Shen, B. G.

    2018-01-01

    MnCoGe-based alloys with magnetostructural transition show giant negative thermal expansion (NTE) behavior and magnetocaloric effects (MCEs) and thus have attracted a lot of attention. However, the drawback of bad mechanical behavior in these alloys obstructs their practical applications. Here, we report the growth of Mn-Co-Ge-In films with thickness of about 45 nm on (001)-LaAlO3, (001)-SrTiO3, and (001)-Al2O3 substrates. The films grown completely overcome the breakable nature of the alloy and promote its multifunctional applications. The deposited films have a textured structure and retain first-order magnetostructural transition. NTE and MCE behaviors associated with the magnetostructural transition have been studied. The films exhibit a completely repeatable NTE around room temperature. NTE coefficient α can be continuously tuned from the ultra-low expansion (α ˜ -2.0 × 10-7/K) to α ˜ -6.56 × 10-6/K, depending on the growth and particle size of the films on different substrates. Moreover, the films exhibit magnetic entropy changes comparable to the well-known metamagnetic films. All these demonstrate potential multifunctional applications of the present films.

  13. Strong uniaxial magnetic anisotropy in Co films on highly ordered grating-like nanopatterned Ge surfaces

    Science.gov (United States)

    Alam Mollick, Safiul; Singh, Ranveer; Kumar, Mohit; Bhattacharyya, Satyaranjan; Som, Tapobrata

    2018-03-01

    We present a systematic investigation on uniaxial magnetic anisotropy (UMA) in Co thin films induced by high aspect ratio nanopatterned anisotropic substrates. Self-organized long grating-like nanostructures, with extreme regularities, are fabricated on Ge surfaces using Au-ion implantation at room temperature. Subsequently deposition of Co films are carried out on the same at two different angles. Magneto-optical Kerr effect measurements show strong UMA in Co films grown on ion-patterned Ge substrates, fabricated under different ion fluences, along and perpendicular to the direction of the patterns (long grating-like nanostructures). Magnetic force microscopy measurements under different externally applied magnetic fields reveal an easy domain wall motion when the field is applied along the grating-like nanostructures. On the other hand, high amplitude grating-like nanostructures hinder the spin rotation when the field is applied along the hard axis. The present study will be useful for magnetic recording media and ultra-small magnetic field sensors.

  14. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    Energy Technology Data Exchange (ETDEWEB)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  15. Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI

    Science.gov (United States)

    Misra, Prasanna K.; Qureshi, S.

    2012-10-01

    The pnp SiGe HBT on thin film SOI is investigated with different Ge profiles using 2D numerical simulations in MEDICI. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and breakdown voltage is obtained for a 0.09 × 1.0 μm2 pnp SiGe HBT with triangular (0%-30%), trapezoidal (10%- 20%) and box (15%) Ge profiles in the base layer. The results obtained with the Ge profiles, has been analyzed and compared. The Ft BVCEO product for triangular, trapezoidal and box Ge profiles has been found as 190.8, 401, and 359.6 GHzV respectively. The tradeoff between voltage gain and unity current gain frequency for the Ge profiles has been analyzed. The simulation result suggests that the pnp SiGe HBT on thin film SOI with trapezoidal Ge profile is a potential candidate for the high speed complementary bipolar circuits that can be used in high performance mixed signal applications.

  16. Equation of state of scheelite-structured ZrGeO{sub 4} and HfGeO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Panchal, Vinod [Synchrotron Radiation Section, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Garg, Nandini [Synchrotron Radiation Section, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Achary, S N [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Tyagi, A K [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Sharma, Surinder M [Synchrotron Radiation Section, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2006-09-06

    The high-pressure behaviour of scheelite-structured ZrGeO{sub 4} and HfGeO{sub 4} has been investigated with the help of angle-dispersive powder x-ray diffraction measurements. Our results show that these compounds do not undergo any phase transition up to the pressures of 20.7 and 19.0 GPa, respectively. The isothermal bulk modulus and its pressure derivatives are found to be 238 GPa and 4.5 for ZrGeO{sub 4}, and 242 GPa and 4.8 for HfGeO{sub 4}, implying that these germanates are highly incompressible.

  17. Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

    Science.gov (United States)

    Das, Kalyan; Hall, Harvey

    1999-01-01

    Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

  18. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

    Science.gov (United States)

    2012-01-01

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh. PMID:22297193

  19. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  20. Lethal photosensitization of biofilm-grown bacteria

    Science.gov (United States)

    Wilson, Michael

    1997-12-01

    Antibacterial agents are increasingly being used for the prophylaxis and treatment of oral diseases. As these agents can be rendered ineffective by resistance development in the target organisms there is a need to develop alternative antimicrobial approaches. Light-activated antimicrobial agents release singlet oxygen and free radicals which can kill adjacent bacteria and a wide range of cariogenic and periodontopathogenic bacteria has been shown to be susceptible to such agents. In the oral cavity these organisms are present as biofilms (dental plaques) which are less susceptible to traditional antimicrobial agents than bacterial suspensions. The results of these studies have shown that biofilm-grown oral bacteria are also susceptible to lethal photosensitization although the light energy doses required are grater than those needed to kill the organisms when they are grown as aqueous suspensions.

  1. Mn-doped ZnS quantum dots for the determination of acetone by phosphorescence attenuation.

    Science.gov (United States)

    Sotelo-Gonzalez, Emma; Fernandez-Argüelles, María T; Costa-Fernandez, Jose M; Sanz-Medel, Alfredo

    2012-01-27

    Quantum dot (QD) nanoparticles (NPs) are increasingly used as highly valuable fluorescent biomarkers and as sensitive (bio)chemical probes. Interestingly, if certain metal impurities are incorporated during the NPs synthesis, phosphorescent QDs with analytical potential can be obtained. We report here the synthesis of colloidal manganese-doped ZnS nanoparticles which have been surface-modified with l-cysteine that exhibit an intense room temperature phosphorescence (RTP) emission in aqueous media even in the presence of dissolved oxygen (i.e. sample deoxygenation is not needed). An exhaustive RTP photoluminescent and morphological characterization of the synthesized QDs and their potential for development of phosphorescent analytical methodologies is described. Application to analytical control of acetone ("model analyte" from the ketones family) in water and urine samples is carried out by measuring the QDs phosphorescence quenching rate. The observed results showed a high selectivity of Mn(2+)-doped ZnS QDs towards acetone. The linear range of the developed methodology turned out to be at least up to 600 mg L(-1) with a detection limit (DL) for acetone dissolved in aqueous medium of 0.2 mg L(-1). The developed methodology was finally applied for acetone determination in different spiked water and urine samples, and the recoveries fall in the range of 93-107%. Copyright © 2011 Elsevier B.V. All rights reserved.

  2. Synthesis, characterization and thermoluminescence studies of Mn-doped ZnS nanoparticles.

    Science.gov (United States)

    Chandrakar, Raju Kumar; Baghel, R N; Chandra, B P

    2016-03-01

    ZnS:Mn nanoparticles were prepared by a chemical precipitation method and characterized by X-ray diffraction (XRD), field emission gun scanning electron microscope (FEGSEM), and high resolution transmission electron microscopy (HRTEM). Capping agent (mercaptoethanol) concentrations used were 0 M, 0.005 M, 0.01 M, 0.015 M, 0.025 M, 0.040 M, and 0.060 M, and resulted in nanoparticles sizes of 2.98 nm, 2.9 nm, 2.8 nm, 2.7 nm, 2.61 nm, 2.2 nm and 2.1 nm, respectively. The thermoluminescence (TL) glow curve was recorded by heating the sample exposed to UV-radiation, at a fixed heating rate 1°C sec(-1). The TL intensity initially increased with temperature, attained a peak value Im for a particular temperature, and then decreased with further increase in temperature. The peak TL intensity increased with decreasing nanoparticle size, whereas the temperature corresponding to the peak TL intensity decreased slightly with reducing nanocrystal size. As a consequence of increase in surface-to-volume ratio and increased carrier recombination rates, the TL intensity increased with decreasing nanoparticle size. It was found that, whereas activation energy slightly decreased with decreasing nanoparticle size, the frequency factor decreased significantly with reduction in nanoparticle size. Copyright © 2015 John Wiley & Sons, Ltd.

  3. Piezoelectric properties of tetragonal single-domain Mn-doped NBT-6 %BT single crystals

    Czech Academy of Sciences Publication Activity Database

    Guennou, Mael; Savinov, Maxim; Drahokoupil, Jan; Luo, H.; Hlinka, Jiří

    2014-01-01

    Roč. 116, č. 1 (2014), s. 225-228 ISSN 0947-8396 R&D Projects: GA ČR GAP204/10/0616; GA MPO FR-TI2/165 Institutional support: RVO:68378271 Keywords : peizoelectricity * ferroelectric domains * domain-engineering * Raman spectroscopy * lead-free Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

  4. Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Horodyská, P.; Tesařová, N.; Němec, P.; Šubrt, J.; Malý, P.; Kužel, Petr; Kadlec, Christelle; Mašek, Jan; Němec, I.; Orlita, Milan; Novák, Vít; Olejník, Kamil; Šobáň, Zbyněk; Vašek, Petr; Svoboda, Pavel; Sinova, Jairo

    2010-01-01

    Roč. 105, č. 22 (2010), 227201/1-227201/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  5. ac MH loop measurements on Mn doped YBa2Cu3O7–δ ...

    Indian Academy of Sciences (India)

    Unknown

    Grover A K, Radhakrishnamurthy C, Chadda P, Ravikumar G and Subba Rao G V 1988 Pramana—J. Phys. 30 569. Harish Kumar N and Seshu Bai V 1996 Phys. Rev. B53 281. Isaac Samuel E and Seshu Bai V 2003 Int. J. Modern Phys. B17. 383. Isaac Samuel E, Seshu Bai V, Sivakumar K M and Ganesan V. 1999 Phys.

  6. Sulfonsuccinate (AOT Capped Pure and Mn-Doped CdS Nanoparticles

    Directory of Open Access Journals (Sweden)

    D. Venkatesan

    2012-01-01

    Full Text Available CdS nanoparticles and thin films are well known for their excellent semiconducting properties. When transition metal ions are doped into the CdS, it exhibits magnetic properties in addition to semiconducting properties and they are termed as dilute magnetic semiconductors (DMSs. In this paper, we discuss the preparation of sodium bis(2-ethylhexyl sulfonsuccinate (AOT capped CdS nanoparticles and thin films doped with magnetic impurity Mn. Sodium bis(2-ethulexyl sulfonsuccinate (AOT, capping agent promotes the uniform formation of nanoparticles. Optical characterizations are made using the UV-Vis spectrometer, PL, and FTIR. XRD shows the hexagonal structure of the CdS. SEM images and EDS measurements were made for the thin films. EPR shows the clear hyperfine lines corresponding to Mn2+ ion in the CdS nanoparticles.

  7. Non-ohmic phenomena in Mn-doped BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prades, Marta; Beltran, Hector; Cordoncillo, Eloisa [Departamento de Quimica Inorganica y Organica, Universitat Jaume I, Avda. Sos Baynat s/n, 12071 Castellon (Spain); Alonso, Pablo J. [Instituto de Ciencia de Materiales de Aragon, ICMA, Universidad de Zaragoza-C.S.I.C., C/Pedro Cerbuna 12, 50009 Zaragoza (Spain); Maso, Nahum; West, Anthony R. [Department of Materials Science and Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)

    2012-11-15

    We report here a novel effect in which the resistance of a semiconducting oxide ceramic increases on application of a small dc bias. The ceramic conducts at high temperatures by an n-type hopping mechanism. On application of a dc bias, conduction electrons are trapped at surface states and the resistance increases. On removal of the dc bias, the trapped electrons are released and the sample regains its original state. This effect is the mirror image of that seen with similar ceramics that conduct by a p-type mechanism whose resistance decreases reversibly on application of a small dc bias. These two phenomena together offer the possibility of novel switching devices and memristive applications, especially if the switching times can be reduced. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Microstructure evolution and phase transition in La/Mn doped barium titanate ceramics

    Directory of Open Access Journals (Sweden)

    Vesna Paunović

    2010-12-01

    Full Text Available La/Mn codoped BaTiO3 with different La2O3 content, ranging from 0.1 to 5.0 at% La, was investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all investigated samples. The samples were sintered at 1320°C and 1350°C for two hours. Microstructural studies were done using SEM and EDS analysis. The fine-grained microstructure was obtained even for low content of La. The appearance of secondary abnormal grains with serrated features along grain boundaries was observed in 1.0 at% La-BaTiO3 sintered at 1350°C. Nearly flat permittivity-temperature response was obtained in specimens with 2.0 and 5.0 at% La. Using the modified Curie-Weiss law a critical exponent γ and C’were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 and great departure from the Curie-Weiss law for low doped ceramics.

  9. Study of ferromagnetism in Mn-doped ZnO whisker arrays

    Indian Academy of Sciences (India)

    WINTEC

    films (Liu et al 2005; Abouzaid et al 2006; Gu et al 2006;. Ramachandran et al 2006; Xu et al 2006) and nanoparticles. (Luo et al 2005), have been prepared by different ex- perimental methods. However, these magnetism results are inconsistent. For example, Zn1−xMnxO (x = 0⋅02) syn- thesized by the sol–gel method are ...

  10. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    G. A. Nemnes

    2012-01-01

    Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

  11. Optical, structural and electrical properties of Mn doped tin oxide thin ...

    Indian Academy of Sciences (India)

    Unknown

    observed in the films was 75% and the band gap varied between 2⋅7 and 3⋅4 eV. Significantly, it was observed that at a dopant concentration of ~ 4 wt% the transmission in the films reached a minimum accompanied by a decrease in the optical band gap. ... research interest over a number of years (Gordon 2000;.

  12. Study of ferromagnetism in Mn-doped ZnO whisker arrays

    Indian Academy of Sciences (India)

    2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institute of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China; Basic Experiment Centre, Fundamental Department, Artillery Academy P.L.A ...

  13. The investigation of the mechanical properties of Mn doped BaSnO3 nanoparticles

    Science.gov (United States)

    Kazah, I.; Awad, R.

    2017-07-01

    This study investigates the effect of Mn substitution on the structural and mechanical properties of nano BaSnO3 using X-ray diffraction analysis (XRD), transmission electron microscopy (TEM), Scanning electron microscope (SEM) and Vickers microhardness. For this investigation, samples of type BaSn1-xMnxO3 with 0.04 ≤ x ≤ 0.4 were prepared by co-precipitation method. XRD patterns indicate the formation of single phase cubic structure BaSnO3 with space group (Pm3m) for 0 ≤ x ≤ 0.1. BaMnO2 hexagonal phase appears as impurity for x > 0.1. The crystallite size, increases as x increases. Vickers microhardness Hv was carried out at different applied loads varying between 0.98 N and 9.8 N at dwell time 40 seconds. The results show that Hv increases as the Mn-content increases, whereas it decreases as the applied load increase. The Hv results were analysed using Elastic Plastic Deformation and the Modified proportional specimen resistance models. The Vickers microhardness analysis indicates that Modified Proportional Specimen Resistance model is the most suitable one for describing the load independent microhardness region of the investigated samples.

  14. Valence and Spin fluctuations in Mn-doped ferroelectric BaTiO3

    OpenAIRE

    Mandal, Subhasish; Cohen, R. E.; Haule, K.

    2018-01-01

    We study Mn substitution for Ti in BaTiO$_3$ with and without compensating oxygen vacancies using density functional theory (DFT) in combination with dynamical mean field theory (DMFT). We find strong charge and spin fluctuations. Without compensating oxygen vacancies, the ground state is found to be a quantum superposition of two distinct atomic valences, 3{\\it d}$^4$ and 3{\\it d}$^5$. Introducing a compensating oxygen vacancy at a neighboring site reduces both charge and spin fluctuations d...

  15. Effect of Mn Doping on Properties of CdS Quantum Dot-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Tianxing Li

    2014-01-01

    Full Text Available Quantum dot-sensitized solar cells (QDSSCs have received extensive attention in recent years due to their higher theoretical conversion efficiency and lower production costs. However, the photoelectric conversion efficiency of QDSSCs is still lower than the DSSCs because of the severe recombination of electrons of quantum dots conduction band. In order to improve the photoelectric conversion efficiency of QDSSCs, impurity element Mn2+ is doped into the precursor solution of cadmium sulfide (CdS. By optimizing the experimental parameters, the photoelectric conversion efficiency of QDSSCs can be greatly improved. For the deposition of a fixed number of six times, the photoelectric conversion efficiency shows the maximum value (1.51% at the doped ratio of 1 : 10.

  16. Magnetic Characterizations of Sol-Gel-Produced Mn-Doped ZnO

    Directory of Open Access Journals (Sweden)

    R. Asmatulu

    2010-01-01

    Full Text Available Nanoparticles of ZnO doped with 6 at.% Mn were produced by a sol-gel method. X-ray diffraction confirms the hexagonal structure as that of the parent compound ZnO, and high-resolution electron transmission microscopy reveals a single-crystallite lattice. Magnetic measurements using a superconducting quantum interference device indicate that about one half of the Mn2+ ions follow Curie's law for paramagnetism. The remaining Mn2+ ions exhibit a weak ferromagnetic character, which might be induced through canted antiferromagnetic interactions.

  17. Optical, structural and electrical properties of Mn doped tin oxide thin ...

    Indian Academy of Sciences (India)

    Unknown

    The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with ... Tin oxide; transparent conductors; thin films. 1. Introduction. Transparent conducting oxides have ... sited sequentially on top of the metal films. The weight of metals in each deposition was ...

  18. Ultrasound Assisted Synthesis and Characterization of Mn Doped CdS Nanocrystalline Zinc-Blendes

    Directory of Open Access Journals (Sweden)

    P. Iranmanesh

    2015-10-01

    Full Text Available Cd1-xMnxS (x = 0, 0.1, 0.2 nanoparticles, prepared by co-precipitation method under ultrasonic irradiation, were studied by means of X-ray diffraction, scanning electron microscopy, FTIR and UV-Vis  spectroscopy measurements. The average particle size of nanoparticles from the scanning electron microscopy image is about 20-30 nm. Results show that partial substitution of Cd by Mn leads to a reduction in lattice parameters and enhancement of band gap energy. This is attributed to the nanometric grain size and quantum confinement effects. The particle size is calculated to be around 2 nm that is almost in agreement with the crystallite size estimated from the XRD result.

  19. Synthesis, structural properties and thermal stability of Mn-doped hydroxyapatite

    Science.gov (United States)

    Paluszkiewicz, Czesława; Ślósarczyk, Anna; Pijocha, Dawid; Sitarz, Maciej; Bućko, Mirosław; Zima, Aneta; Chróścicka, Anna; Lewandowska-Szumieł, Małgorzata

    2010-07-01

    Hydroxyapatite (HA) - Ca 10(PO 4) 6(OH) 2 is a basic inorganic model component of hard biological tissues, such as bones and teeth. The significant property of HA is its ability to exchange Ca 2+ ions, which influences crystallinity, physico-chemical and biological properties of modified hydroxyapatite materials. In this work, FTIR, Raman spectroscopy, XRD, SEM and EDS techniques were used to determine thermal stability, chemical and phase composition of Mn containing hydroxyapatite (MnHA). Described methods confirmed thermal decomposition and phase transformation of MnHA to αTCP, βTCP and formation of Mn 3O 4 depending on sintering temperature and manganese content. In vitro biological evaluation of Mn-modified HA ceramics was also performed using human osteoblast cells.

  20. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, Miroslav; Mikulics, M.; Sofer, Z.

    2015-01-01

    Roč. 164, Aug (2015), 108-114 ISSN 0254-0584 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * menitrides * nanostructures * magnetic properties * chemical synthesis * semiconductors Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

  1. Sol–gel synthesis and luminescence of undoped and Mn-doped zinc orthosilicate phosphor nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    El Ghoul, J., E-mail: ghoultn@yahoo.fr [Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); El Mir, L. [Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l’Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); Al Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Sciences, Departement of Physics, Riyadh 11623 (Saudi Arabia)

    2014-04-15

    Zn{sub 2}SiO{sub 4} and Zn{sub 2}SiO{sub 4}:Mn particles embedded in SiO{sub 2} host matrix prepared by sol gel method under supercritical conditions of ethyl alcohol in two steps. Were prepared by a simple solid-phase reaction under natural atmosphere at 1200 °C after the incorporation of ZnO and ZnO:Mn nanoparticles, respectively, in silica monolith. In the case of SiO{sub 2}/Zn{sub 2}SiO{sub 4} nanocomposite, the powder with an average particle size of 80 nm shows a strong luminescence band centred at around 760 nm in the visible range. In addition, the PL spectrum for the SiO{sub 2}/Zn{sub 2}SiO{sub 4}:Mn nanocomposite showed that a dominant peak at 525 nm appeared, which originated from the {sup 4}T{sub 1}–{sup 6}A{sub 1} transitions of Mn{sup 2+} ions. The luminescence properties of nanocomposites were characterized by emission and excitation spectra as well their dependencies of upon temperature and power excitation density. -- Highlights: • The Synthesis of Zn{sub 2}SiO{sub 4} nanocomposites. • Structural and optical characterizations of Zn{sub 2}SiO{sub 4} and Zn{sub 2}SiO{sub 4}:Mn nanocomposites. • The willemite α-Zn{sub 2}SiO{sub 4} structure was formed to the heat treatment temperature 1200 °C. • The powder exhibits a nanometric size. • Strong bands of luminescence have appeared.

  2. Mn-doped ZnS quantum dots for the determination of acetone by phosphorescence attenuation

    International Nuclear Information System (INIS)

    Sotelo-Gonzalez, Emma; Fernandez-Argüelles, María T.; Costa-Fernandez, Jose M.; Sanz-Medel, Alfredo

    2012-01-01

    Highlights: ► Colloidal Mn:ZnS QDs exhibiting intense and long-lasting phosphorescence were synthesized and exhaustively characterized. ► Several experimental factors that influence classical phosphorescence do not modify the Mn:ZnS QDs phosphorescence emission. ► Mn:ZnS QDs have been applied for phosphorescence-based acetone determination. ► A mechanism has been proposed to explain acetone quenching effect on QDs phosphorescence. - Abstract: Quantum dot (QD) nanoparticles (NPs) are increasingly used as highly valuable fluorescent biomarkers and as sensitive (bio)chemical probes. Interestingly, if certain metal impurities are incorporated during the NPs synthesis, phosphorescent QDs with analytical potential can be obtained. We report here the synthesis of colloidal manganese-doped ZnS nanoparticles which have been surface-modified with L-cysteine that exhibit an intense room temperature phosphorescence (RTP) emission in aqueous media even in the presence of dissolved oxygen (i.e. sample deoxygenation is not needed). An exhaustive RTP photoluminescent and morphological characterization of the synthesized QDs and their potential for development of phosphorescent analytical methodologies is described. Application to analytical control of acetone (“model analyte” from the ketones family) in water and urine samples is carried out by measuring the QDs phosphorescence quenching rate. The observed results showed a high selectivity of Mn 2+ -doped ZnS QDs towards acetone. The linear range of the developed methodology turned out to be at least up to 600 mg L −1 with a detection limit (DL) for acetone dissolved in aqueous medium of 0.2 mg L −1 . The developed methodology was finally applied for acetone determination in different spiked water and urine samples, and the recoveries fall in the range of 93–107%.

  3. Nucleolus in clinostat-grown plants

    Energy Technology Data Exchange (ETDEWEB)

    Shen-Miller, J.; Dannenhoffer, J. (Univ. of California, Los Angeles (United States)); Hinchman, R. (Argonne National Lab., IL (United States))

    1991-05-01

    The clinostat is an apparatus that is used to mimic zero gravity in studies of plant growth in the absence of gravitropic response. Clinostat-grown tissue cultures of carrot exhibit significant increases both in the number of nuclei containing more than one nucleolus and in nucleolar volume. Oat seedlings germinated and grown on clinostats exhibit a decreased rate of shoot elongation, increased tissue sensitivity to applied auxin, and an increased response to gravitropic stimulation. Clinostat treatment clearly affects plant metabolism. The nucleolus is the region in the nucleus where ribosome synthesis and assembly take place. The 18S, 5.8S, and 25S ribosomal genes, in tandem units, are located in the nucleolus. Ribosomes orchestrate the production of all proteins that are necessary for the maintenance of cell growth, development, and survival. A full study of the effects of nullification of gravitropism, by clinostat rotation, on nucleolar development in barley has been initiated. The authors study developmental changes of nucleolar number and diameter in clinostat-grown root tissues. Preliminary results show that barley roots exhibit changes in nucleolar number and diameter. Growth rates of barley root and shoot also appear to be reduced, in measurements of both length and weight.

  4. Mineral composition of organically grown tomato

    Science.gov (United States)

    Ghambashidze, Giorgi

    2014-05-01

    In recent years, consumer concerns on environmental and health issues related to food products have increased and, as a result, the demand for organically grown production has grown. Results indicate that consumers concerned about healthy diet and environmental degradation are the most likely to buy organic food, and are willing to pay a high premium. Therefore, it is important to ensure the quality of the produce, especially for highly consumed products. The tomato (Lycopersicon esculentum) is one of the most widely consumed fresh vegetables in the world. It is also widely used by the food industries as a raw material for the production of derived products such as purees or ketchup. Consequently, many investigations have addressed the impact of plant nutrition on the quality of tomato fruit. The concentrations of minerals (P, Na, K, Ca and Mg) and trace elements (Cu, Zn and Mn) were determined in tomatoes grown organically in East Georgia, Marneuli District. The contents of minerals and Mn seem to be in the range as shown in literature. Cu and Zn were found in considerably high amounts in comparison to maximum permissible values established in Georgia. Some correlations were observed between the minerals and trace elements studied. K and Mg were strongly correlated with Cu and Zn. Statistically significant difference have shown also P, K and Mg based between period of sampling.

  5. 3 GeV Injector Design Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  6. Thermoelectric Performance of Na-Doped GeSe

    NARCIS (Netherlands)

    Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

    2017-01-01

    Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

  7. Local atomic environment in amorphous Ge15Te85

    Science.gov (United States)

    Jóvári, P.; Kaban, I.; Hoyer, W.; Delaplane, R. G.; Wannberg, A.

    2005-03-01

    The structure of amorphous Ge15Te85 has been studied by neutron and x-ray diffraction. Experimental data have been modelled simultaneously with the reverse Monte Carlo simulation method. The contrast between structure factors together with the application of some plausible physical constraints allowed the separation of the three partial pair correlation functions and determination of Ge and Te local environment.

  8. Stress evolution of Ge nanocrystals in dielectric matrices

    Science.gov (United States)

    Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

    2018-05-01

    Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

  9. GeNF - experimental report 2003

    Energy Technology Data Exchange (ETDEWEB)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. for Materials Research

    2004-07-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10{sup 14} thermal neutrons / cm{sup 2} s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  10. GeNF - Experimental report 2006

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2007-01-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  11. GeNF - experimental report 2003

    International Nuclear Information System (INIS)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R.

    2004-01-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10 14 thermal neutrons / cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  12. GeNF - Experimental report 2006

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. of Materials Research

    2007-07-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  13. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

    Science.gov (United States)

    Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

    2018-01-01

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  14. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys.

    Science.gov (United States)

    Herlach, Dieter M; Simons, Daniel; Pichon, Pierre-Yves

    2018-02-28

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge 100- x Si x ( x  = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth.This article is part of the theme issue 'From atomistic interfaces to dendritic patterns'. © 2018 The Author(s).

  15. 20 GeV e+ x 400 GeV p: some synchrotron radiation considerations

    International Nuclear Information System (INIS)

    Humphrey, J.W.; Limon, P.J.

    1977-01-01

    The possibility of a 20 GeV electron ring in the 400 x 400 GeV 2 ISABELLE tunnel is considered. The conclusions that can be drawn from these considerations are: (1) much work remains to be done on the implications of synchrotron radiation for insertion design; (2) in the absence of considerations concerning insertion areas with longitudinal polarization, placing the electron ring in the same vertical plane as the electron ring is mildly favored; (3) creating insertions for longitudinally polarized electrons is difficult, and elementary considerations indicate that the synchrotron radiation flux in the insertion region will increase by a factor of approximately 100 and the luminosity may decrease by a factor of approximately 10; and (4) the creation of insertions for longitudinally polarized electrons favors placing the electron ring in the same horizontal plane as the proton ring

  16. Evolution of the Shape of Detached GeSi Crystals in Microgravity

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. An objective of these experiments is to understand the mechanisms of detached Bridgman growth, a process in which a gap exists between the growing semiconductor crystal and the crucible wall. Crystals grown without wall contact have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus.

  17. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  18. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  19. First evidence of low energy enhancement in Ge isotopes

    Directory of Open Access Journals (Sweden)

    Renstrøm T.

    2015-01-01

    Full Text Available The γ-strength functions and level densities of 73,74Ge have been extracted from particle-γ coincidence data using the Oslo method. In addition the γ-strength function of 74Ge above the neutron separation threshold, Sn = 10.196 MeV has been extracted from photoneutron measurements. When combined, these two experiments give a γ-strength function covering the energy range of ∼1-13 MeV for 74Ge. This thorough investigation of 74Ge is a part of an international campaign to study the previously reported low energy enhancement in this mass region in the γ-strength function from ∼3MeV towards lower γ energies. The obtained data show that both 73,74Ge display an increase in strength at low γ energies.

  20. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    Science.gov (United States)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance-voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  1. Physical and mechanical properties of saligna eucalyptus grown in Hawaii

    Science.gov (United States)

    C.C. Gerhards

    1965-01-01

    Physical and mechanical properties were determined for saligna eucalyptus (Eucalyptus saligna, Smith) grown in Hawaii. In comparison with wood of the same species grown in Australia, saligna eucalyptus grown in Hawaii was lower in density, shrinkage, and compressive strength parallel to grain; it was about equal in strength in bending and shear; and it was stiffer....

  2. Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

    Science.gov (United States)

    Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

    2018-05-01

    Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

  3. Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

    Science.gov (United States)

    Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

    2012-02-08

    Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

  4. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    OpenAIRE

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Zhou, Yi; Chen, Lih-Juann; Wang, Kang L.

    2011-01-01

    We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studie...

  5. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Jianshi Tang

    2011-01-01

    Full Text Available We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

  6. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys

    OpenAIRE

    Lungu, George A.; Apostol, Nicoleta G.; Stoflea, Laura E.; Costescu, Ruxandra M.; Popescu, Dana G.; Teodorescu, Cristian M.

    2013-01-01

    Ferromagnetic Fe x Ge1?x with x = 2%?9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 ?C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 ? 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe3 to approximately FeGe2, depending on the amount of Fe deposited. Room ...

  7. GeNF - Experimental report 2007

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2008-01-01

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10 -7 . Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields (tomography

  8. GeNF - Experimental report 2008

    International Nuclear Information System (INIS)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas

    2009-01-01

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10 14 thermal neutrons/cm 2 s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame of the

  9. GeNF - Experimental report 2007

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2008-11-05

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10{sup -7}. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields

  10. GeNF - Experimental report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2009-12-11

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10{sup 14} thermal neutrons/cm{sup 2} s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame

  11. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  12. Pulse shape discrimination performance of inverted coaxial Ge detectors

    Science.gov (United States)

    Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

    2018-05-01

    We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

  13. SU-75: a disordered Ge10 germanate with pcu topology.

    Science.gov (United States)

    Huang, Shiliang; Inge, A Ken; Yang, Sihai; Christensen, Kirsten E; Zou, Xiaodong; Sun, Junliang

    2012-10-28

    A disordered open-framework germanate, denoted as SU-75, was synthesized under hydrothermal conditions using diethylenetriamine (dien) or alternatively 1,4-diaminobutane (dab) as the structure directing agent (SDA). SU-75 crystallizes in a tetragonal space group I42d (No. 122) with a = 18.145(3) Å and c = 41.701(9) Å. The three-dimensional (3D) framework is built from Ge(10)(O,OH)(28) (Ge(10)) clusters that are connected following the pcu (primitive cubic) net topology. SU-75 has 10-, 11- and 12-ring channels along the a- and b-axes and channels with alternating 8-, 10-, 12-, 10-ring openings along the c-axis. The framework exhibits a serious disorder, resulted from two possible connectivities between the units of four Ge(10) clusters (4Ge(10) unit). The chemical formula of SU-75 is |(H(2)SDA)(2)(H(2)O)(n)|[Ge(10)O(21)(OH)(2)] (SDA = dien or dab, n = 5-6), determined by combining single crystal synchrotron X-ray diffraction, thermogravimetric analysis (TGA) and CHN elemental analysis. A superoctahedron is introduced to simplify the description of the connectivity of the Ge(10) clusters and to illustrate the disorder. This is also used to compare the structure of SU-75 with those of related Ge(10) germanates.

  14. Recent results in characterization of melt-grown and quench-melt- grown YBCO superconductors

    International Nuclear Information System (INIS)

    Balachandran, U.; Poeppel, R.B.; Gangopadhyay, A.K.

    1992-02-01

    From the standpoint of applications, melt-grown (MG) and quench-melt-grown (QMG) bulk YBCO superconductors are of considerable interest. In this paper, we studied the intragranular critical current density (J c ), the apparent pinning potential (U o ), and the irreversibility temperature (T irr ) of MG and QMG samples and compared the results to those for conventionally sintered YBCO. A systematic increase in U o and a slower drop in J c with temperature indicate a systematic improvement in flux-pinning properties in progressing from the sintered YBCO to QMG and MG samples. Weaker pinning is observed in the QMG YBCO than in the MG samples

  15. Development of twin Ge detector and its performance

    CERN Document Server

    Shigetome, Y

    2001-01-01

    Twin Ge detector which consists of two large Ge crystals, closely packed in a common housing, has been designed and developed to realize high detection efficiency and peak-to-total ratio (P/T) for high-energy photons in the energy range 10-30 MeV. Performance of the twin Ge detector in an energy range up to 30 MeV is calculated by Monte Carlo simulation method. It is shown that this detector allows extending an energy range for high-resolution photon spectroscopy to over 10 MeV.

  16. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  17. Sample Scripts for Generating PaGE-OM XML [

    Lifescience Database Archive (English)

    Full Text Available Sample Scripts for Generating PaGE-OM XML This page is offering some sample scripts...on MySQL. Outline chart of procedure 6. Creating RDB tables for Generating PaGE-OM XML These scripts help yo...wnload: create_tables_sql2.zip 7. Generating PaGE-OM XML from phenotype data This sample Perl script helps y...ou to extract data from MySQL by an example. The user table is necessary to execute it appropriately. Example of script: makexml..._gv_full.pl #!usr/bin/perl ######################### # xmlmak

  18. Soft chemistry routes to GeS2 nanoparticles

    Science.gov (United States)

    Courthéoux, Laurence; Mathiaud, Romain; Ribes, Michel; Pradel, Annie

    2018-04-01

    Spherical GeS2 particles are prepared by a low temperature liquid route with TEOG as germanium precursor and either H2S or thioacetamide (TAA) as sulfur precursors. The size and agglomeration of the particles change depending upon the temperature and nature of the solvent. Most synthesis lead to preparing amorphous GeS2. When the reaction kinetic is slowed down by using TAA at 25 °C, the obtained GeS2 product presents a larger order in the range of few Å as proven by Raman spectroscopy, even though it is still an amorphous compound as suggested by X-Ray diffraction and TEM experiments.

  19. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, A., E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Coelho, S.M.M.; Auret, F.D.; Mtangi, W. [Department of Physics, University of Pretoria, 0002 (South Africa); Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Nel, J.M.; Diale, M. [Department of Physics, University of Pretoria, 0002 (South Africa)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. Black-Right-Pointing-Pointer The variation of the electrical and structural properties can be due to effects phase transformation during annealing. Black-Right-Pointing-Pointer Thermal stability of these diodes is maintained up to 500 Degree-Sign C anneal. Black-Right-Pointing-Pointer SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 Degree-Sign C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C.

  20. New quaternary indides RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} (RE = La, Nd, Sm)

    Energy Technology Data Exchange (ETDEWEB)

    Dominyuk, Nataliya [Lviv Univ. (Ukraine). Dept. of Inorganic Chemistry; Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Zaremba, Vasyl I. [Lviv Univ. (Ukraine). Dept. of Inorganic Chemistry; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2011-04-15

    The quaternary indides RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} (RE = La,Nd, Sm) were synthesized from the elements by arc-melting. Single crystals were grown by slow cooling of the polycrystalline samples. The structures were characterized by powder and single-crystal X-ray diffraction: Ce{sub 7}Ni{sub 4.73}Ge{sub 3.27}In{sub 6} type, P6/m, Z = 1, a = 1147.05(9), c = 426.82(4) pm, wR2 = 0.0652, 528 F{sup 2} values for La{sub 7}Ni{sub 4.46}Ge{sub 3.54}In{sub 6}, a = 1134.5(7), c = 407.1(7) pm, wR2 = 0.0419, 441 F{sup 2} values for Nd{sub 7}Ni{sub 4.91}Ge{sub 3.09}In{sub 6}, and a = 1133.5(2), c = 404.3(1) pm, wR2 = 0.0619, 498 F{sup 2} values for Sm{sub 7}Ni{sub 4.31}Ge{sub 3.69}In{sub 6}, with 25 parameters per refinement. Characteristic features of the RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} structures are hexagonal, AlB{sub 2}-related prisms around the RE1 atoms and a tricapped, trigonalprismatic coordination of the nickel atoms. (orig.)