Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

International Nuclear Information System (INIS)

Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

2010-01-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

International Nuclear Information System (INIS)

Khromov, S.; Hemmingsson, C.; Monemar, B.; Hultman, L.; Pozina, G.

2014-01-01

Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 10 16 cm −3 to 6 × 10 17 cm −3 . Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 10 17 cm −3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission

Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

International Nuclear Information System (INIS)

Burnham, Shawn D.; Thomas, Edward W.; Doolittle, W. Alan

2006-01-01

A characterization technique is discussed that allows quantitative optimization of doping in epitaxially grown semiconductors. This technique uses relative changes in the host atom secondary ion (HASI) energy distribution from secondary ion mass spectroscopy (SIMS) to indicate relative changes in conductivity of the material. Since SIMS is a destructive process due to sputtering through a film, a depth profile of the energy distribution of sputtered HASIs in a matrix will contain information on the conductivity of the layers of the film as a function of depth. This process is demonstrated with Mg-doped GaN, with the Mg flux slowly increased through the film. Three distinct regions of conductivity were observed: one with Mg concentration high enough to cause compensation and thus high resistivity, a second with moderate Mg concentration and low resistivity, and a third with little to no Mg doping, causing high resistivity due to the lack of free carriers. During SIMS analysis of the first region, the energy distributions of sputtered Ga HASIs were fairly uniform and unchanging for a Mg flux above the saturation, or compensation, limit. For the second region, the Ga HASI energy distributions shifted and went through a region of inconsistent energy distributions for Mg flux slightly below the critical flux for saturation, or compensation. Finally, for the third region, the Ga HASI energy distributions then settled back into another fairly unchanging, uniform pattern. These three distinct regions were analyzed further through growth of Mg-doped step profiles and bulk growth of material at representative Mg fluxes. The materials grown at the two unchanging, uniform regions of the energy distributions yielded highly resistive material due to too high of Mg concentration and low to no Mg concentration, respectively. However, material grown in the transient energy distribution region with Mg concentration between that of the two highly resistive regions yielded low

Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

Science.gov (United States)

Burnham, Shawn D.; Thomas, Edward W.; Doolittle, W. Alan

2006-12-01

A characterization technique is discussed that allows quantitative optimization of doping in epitaxially grown semiconductors. This technique uses relative changes in the host atom secondary ion (HASI) energy distribution from secondary ion mass spectroscopy (SIMS) to indicate relative changes in conductivity of the material. Since SIMS is a destructive process due to sputtering through a film, a depth profile of the energy distribution of sputtered HASIs in a matrix will contain information on the conductivity of the layers of the film as a function of depth. This process is demonstrated with Mg-doped GaN, with the Mg flux slowly increased through the film. Three distinct regions of conductivity were observed: one with Mg concentration high enough to cause compensation and thus high resistivity, a second with moderate Mg concentration and low resistivity, and a third with little to no Mg doping, causing high resistivity due to the lack of free carriers. During SIMS analysis of the first region, the energy distributions of sputtered Ga HASIs were fairly uniform and unchanging for a Mg flux above the saturation, or compensation, limit. For the second region, the Ga HASI energy distributions shifted and went through a region of inconsistent energy distributions for Mg flux slightly below the critical flux for saturation, or compensation. Finally, for the third region, the Ga HASI energy distributions then settled back into another fairly unchanging, uniform pattern. These three distinct regions were analyzed further through growth of Mg-doped step profiles and bulk growth of material at representative Mg fluxes. The materials grown at the two unchanging, uniform regions of the energy distributions yielded highly resistive material due to too high of Mg concentration and low to no Mg concentration, respectively. However, material grown in the transient energy distribution region with Mg concentration between that of the two highly resistive regions yielded low

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Energy Technology Data Exchange (ETDEWEB)

Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

2012-08-15

In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy

International Nuclear Information System (INIS)

Li, A.Z.; Kim, H.K.; Jeong, J.C.; Wong, D.; Schlesinger, T.E.; Milnes, A.G.

1988-01-01

The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500--600 0 C for Si doping levels of 4--7 x 10 16 cm -3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 10 15 cm -3 down to 12 cm -3 ) and two and a half orders of magnitude for M6 by introducing 0.2--1 at.% In or Sb and increasing growth temperatures from 500 to 550 0 C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 0 C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (V/sub As/V/sub Ga/) complexes or (V/sub As/XV/sub Ga/) complexes where X is different for M3 and M6 and might be interstitial or impurity related

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

2011-07-15

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Bulk growth of undoped and Nd3+ doped zinc thiourea chloride (ZTC) monocrystal: Exploring the remarkably enhanced structural, optical, electrical and mechanical performance of Nd3+ doped ZTC crystal for NLO device applications

Science.gov (United States)

Anis, Mohd; Muley, Gajanan. G.

2017-05-01

In current scenario good quality crystals are demanded for NLO device application hence present communication is aimed to grow bulk crystal and investigate the doping effect of rare earth element Nd3+ on structural, linear-nonlinear optical, luminescence, mechanical and dielectric properties of zinc thiourea chloride (ZTC) crystal. The ZTC crystal of dimension 21×10×8 mm3 and the Nd3+ doped ZTC crystal of dimension 27×17×5 mm3 have been grown from aqueous solution by slow evaporation technique. The elemental analysis of Nd3+ doped ZTC single crystal has been performed by means of energy dispersive spectroscopic technique. The powder X-ray diffraction technique has been employed to confirm the crystalline phase and identify the effect of Nd3+ doping on structural dimensions of ZTC crystal. The grown crystals have been characterized by UV-Vis-NIR study in the range of 190-1100 nm to ascertain the enhancement in optical transparency of ZTC crystal facilitated by dopant Nd3+. The recorded transmittance data has been utilized to investigate the vital optical constants of grown crystals. The second order nonlinear optical behavior of grown crystals has been evaluated by means of Kurtz-Perry test and the second harmonic generation efficiency of Nd3+ doped ZTC crystal is found to be 1.24 times higher than ZTC crystal. The luminescence analysis has been performed to examine the electronic purity and the color centered photoluminescence emission nature of pure and Nd3+ doped ZTC crystals. The influence of Nd3+ ion on mechanical behavior of ZTC crystal has been investigated by means of microhardness studies. The nature of dielectric constant and dielectric loss of pure and Nd3+ doped ZTC crystal has been examined in the range of 40-100 °C under dielectric study. The Z-scan technique has been employed using the He-Ne laser to investigate the third order nonlinear optical (TONLO) nature of Nd3+ doped ZTC single crystal. The magnitude of TONLO susceptibility, absorption

Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping

Science.gov (United States)

Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li

2018-03-01

Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Characteristic of doping and diffusion of heavily doped n and p type InP and InGaAs epitaxial layers grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Pinzone, C.J.; Dupuis, R.D.; Ha, N.T.; Luftman, H.S.; Gerrard, N.D.

1990-01-01

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material. In this study, N-type doping above 10 19 cm -3 has been achieved in InP and InGaAs using Sn as a dopant. P-type Zn doping at these levels has also been achieved in these materials but p type activation above ∼3 x 10 18 cm -3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples

Spontaneous and stimulated emission in Sm3+-doped YAl3(BO3)4 single crystal

International Nuclear Information System (INIS)

Ryba-Romanowski, Witold; Lisiecki, Radosław; Beregi, Elena; Martín, I.R.

2015-01-01

Single crystals of YAl 3 (BO 3 ) 4 doped with trivalent samarium were grown by the top-seeded high temperature solution method and their absorption and emission spectra were investigated. Optical pumping into prominent absorption band around 405 nm feeds the 4 G 5/2 metastable level giving rise to intense visible luminescence distributed in several spectral lines with the most intense line around 600 nm characterized by a branching ratio of 0.42 and peak emission cross section of 0.25×10 −20 cm 2 . Optical amplification at 600 nm with a gain coefficient of 2.9 cm −1 was achieved during a pump-and-probe experiment. - Highlights: • YAB:Sm crystal grown by the top-seeded high temperature solution method. • Spectroscopic qualities relevant for visible laser operation. • YAB:Sm single crystal used in a pump-and-probe experiment. • Optical amplification properties of samarium doped YAl 3 (BO 3 ) 4

Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

CERN Document Server

Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

1998-01-01

We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

Diffusivity, solubility and thermodynamic modelling of diffusion growth of Ga"3"+-doped LiTaO_3 thin film for integrated optics

International Nuclear Information System (INIS)

Zhang, De-Long; Zhang, Qun; Zhang, Pei; Kang, Jian; Wong, Wing-Han; Yu, Dao-Yin

2016-01-01

Graphical abstract: Diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film was studied thermodynamically. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. The Ga"3"+ profile in the grown thin film was analyzed by secondary ion mass spectrometry. Form the measured Ga"3"+ profiles, some thermodynamic parameters were obtained. These include diffusivity, diffusion constant, chemical activation energy, solubility, solubility constant and enthalpy of solution. These parameters are crucial to design and growth of a Ga"3"+-doped LT thin film with desired Ga"3"+ profile for integrated optics application. A thermodynamic model is suggested for the growth and verified experimentally. - Highlights: • Diffusion growth of Ga"3"+-doped LiTaO_3 thin film were studied thermodynamically. • Diffusion constant is 1.41 · 10"−"6 m"2/s and activation energy is 237.2 kJ/mol. • Solubility constant is 22.9 · 10"2"6 ions/m"3 and enthalpy of solution is 28.9 kJ/mol. • Ga"3"+ dopant has small effect on LiTaO_3 refractive index. • Ga"3"+ growth can be described by a Fick-type equation with a constant diffusivity. - Abstract: A thermodynamic study was performed on diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film for integrated optics. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. After growth, the refractive indices at Ga"3"+-doped and un-doped surface parts were measured by prism coupling technique and Li composition there was evaluated from the measured refractive indices. The results show that Ga"3"+ dopant has small effect on the LT index. Li_2O out-diffusion is not measurable. The Ga"3"+ profile in the grown thin film was analysed by secondary ion mass spectrometry. It is found that the grown Ga"3"+ ions follow a complementary error function profile. A

Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2004-01-01

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Glaser, E.R.; Murthy, M.; Freitas, J.A.; Storm, D.F.; Zhou, L.; Smith, D.J.

2007-01-01

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (10 17 -10 20 cm -3 ) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3x10 18 cm -3 , the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1x10 17 cm -3 revealed the first evidence for the highly anisotropic g-tensor (g parallel ∼2.19, g perpendicular ∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5x10 6 cm -3 ) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers

Optical spectroscopy of Nd3+/Mg2+ co-doped LiTaO3 laser crystal

International Nuclear Information System (INIS)

Zhang, P X; Hang, Y; Gong, J; Zhao, C C; Yin, J G; Zhang, L H; Zhu, Y Y

2013-01-01

A Nd 3+ and Mg 2+ co-doped LiTaO 3 single crystal has been grown successfully by the Czochralski method. The polarized absorption spectra of the crystal were measured and investigated. The peak absorption cross-sections at 806 and 810 nm were 4.17 × 10 −20 cm 2 and 4.47 × 10 −20 cm 2 with a full width at half maximum of 29 and 17 nm for σ- and π-polarization, respectively. Based on the Judd–Ofelt theory, the spectral parameters of Nd 3+ in the as-grown crystal were investigated in detail. Moreover, the emission probabilities, branching ratio and radiative lifetime for the transitions from 4 F 3/2 were calculated. The radiative lifetime of 4 F 3/2 was calculated to be 159 μs and the luminescent quantum efficiency of the 4 F 3/2 manifold was about 81.13%. The results were also compared with other Nd 3+ doped crystals. (paper)

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Science.gov (United States)

Ma, Y. J.; Zhang, Y. G.; Gu, Y.; Xi, S. P.; Chen, X. Y.; Liang, Baolai; Juang, Bor-Chau; Huffaker, Diana L.; Du, B.; Shao, X. M.; Fang, J. X.

2017-07-01

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm-3, and for Be densities below 9.5×1017 cm-3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm-3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Y. J. Ma

2017-07-01

Full Text Available We report structural properties as well as electrical and optical behaviors of beryllium (Be-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Science.gov (United States)

Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

2017-07-01

β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

In-depth investigation of spin-on doped solar cells with thermally grown oxide passivation

Directory of Open Access Journals (Sweden)

Samir Mahmmod Ahmad

Full Text Available Solar cell industrial manufacturing, based largely on proven semiconductor processing technologies supported by significant advancements in automation, has reached a plateau in terms of cost and efficiency. However, solar cell manufacturing cost (dollar/watt is still substantially higher than fossil fuels. The route to lowering cost may not lie with continuing automation and economies of scale. Alternate fabrication processes with lower cost and environmental-sustainability coupled with self-reliance, simplicity, and affordability may lead to price compatibility with carbon-based fuels. In this paper, a custom-designed formulation of phosphoric acid has been investigated, for n-type doping in p-type substrates, as a function of concentration and drive-in temperature. For post-diffusion surface passivation and anti-reflection, thermally-grown oxide films in 50–150-nm thickness were grown. These fabrication methods facilitate process simplicity, reduced costs, and environmental sustainability by elimination of poisonous chemicals and toxic gases (POCl3, SiH4, NH3. Simultaneous fire-through contact formation process based on screen-printed front surface Ag and back surface through thermally grown oxide films was optimized as a function of the peak temperature in conveyor belt furnace. Highest efficiency solar cells fabricated exhibited efficiency of ∼13%. Analysis of results based on internal quantum efficiency and minority carried measurements reveals three contributing factors: high front surface recombination, low minority carrier lifetime, and higher reflection. Solar cell simulations based on PC1D showed that, with improved passivation, lower reflection, and high lifetimes, efficiency can be enhanced to match with commercially-produced PECVD SiN-coated solar cells. Keywords: Crystalline Si solar cells, Phosphoric acid spin-on doping, Screen printing, Thermal oxide passivation

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Fabrication, phase, microstructure and electrical properties of BNT-doped (Sr,La)TiO{sub 3} ceramics

Energy Technology Data Exchange (ETDEWEB)

Eaksuwanchai, Preeyakarn; Promsawat, Methee; Jiansirisomboon, Sukanda; Watcharapasorn, Anucha [Chiang Mai University, Chiang Mai (Thailand)

2014-08-15

This research studied the effects of Bi{sub 0.5}Na{sub 0.5}TiO{sub 3} (BNT) doping on the phase, density, microstructure and electrical properties of (Sr,La)TiO{sub 3} (SLTO) ceramics. Separately calcined SLTO and BNT powders were mixed together to form (1-x)SLTO-xBNT (where x = 0, 0.01, 0.03, 0.05 and 0.07 mol fraction) compounds that were pressed into pellets and then sintered at 1500 .deg. C for 3 h under ambient atmosphere. The relative bulk densities of all the ceramics were greater than 95% their theoretical values which were confirmed by their nearly zero-porosity microstructure. X-ray diffraction patterns indicated complete solid solutions with a cubic structure and a slight lattice contraction when BNT was added. The electrical conductivity was found to decrease with BNT addition, suggesting a reduced number of mobile charges. The dielectric constant also showed limited polarization due to defect dipoles formed by aliovalent ionic substitution of BNT. Further optimization in terms of composition and defect chemistry could lead to a compound suitable for thermoelectric applications.

X-ray characterization Si-doped InAs nanowires grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

2011-07-01

Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ.

Science.gov (United States)

Edmonds, Mark T; Hellerstedt, Jack; O'Donnell, Kane M; Tadich, Anton; Fuhrer, Michael S

2016-06-29

We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

Dielectric, piezoelectric properties of MnO2-doped (K0.5Na0.5)NbO3–0.05LiNbO3 crystal grown by flux-Bridgman method

International Nuclear Information System (INIS)

Liu, Ying; Xu, Guisheng; Liu, Jinfeng; Yang, Danfeng; Chen, Xiaxia

2014-01-01

Highlights: • KNN–0.05LN based single crystals were grown by flux-Bridgman method. • Dielectric, piezoelecrc and ferroelectric properties were studied. • The effect of MnO 2 doping on the crystals' properties. • Dielectric and other properties were improved due to MnO 2 doping. - Abstract: Lead-free potassium sodium niobate piezoelectric single crystals substituted with lithium and then doped with MnO 2 (K 0.5 Na 0.5 )NbO 3 –0.05LiNbO 3 –yMnO 2 (y = 0%, 1.0% and 1.5%) (abbreviated as KNN–0.05LN–yMnO 2 ) have been grown by flux-Bridgman method using KCl–K 2 CO 3 eutectic composition as the flux. Their actual composition as well as the dielectric and piezoelectric properties were studied. Their actual composition deviated from the ratio of the raw materials due to different segregation coefficients of K and Na. The orthorhombic–tetragonal (T o–t ) and tetragonal–cubic phase transition temperature (the Curie temperature T c ) of the single crystal appears at 186 °C and 441 °C, respectively, for KNN–0.05LN–1.0%MnO 2 , shift to higher temperatures compared with that of pure KNN–0.05LN crystals, according to the dielectric permittivity versus temperature loops. The KNN–0.05LN–1.0%MnO 2 (001) plate shows higher piezoelectric coefficient d 33 and dielectric permittivity ε r when compared with pure KNN–0.05LN crystal, being on the order of 226 pC/N and 799 (161 pC/N and 530 for KNN–0.05LN), respectively. These excellent properties show that MnO 2 dopant is effective in improving KNN–0.05LN based piezoelectric crystals

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

Science.gov (United States)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

Energy Technology Data Exchange (ETDEWEB)

Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

2015-12-30

Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

International Nuclear Information System (INIS)

Karuppasamy, A.

2015-01-01

Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

International Nuclear Information System (INIS)

Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

2009-01-01

Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

NARCIS (Netherlands)

Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

2010-01-01

Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

VLS-grown diffusion doped ZnO nanowires and their luminescence properties

International Nuclear Information System (INIS)

Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

2015-01-01

Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

Science.gov (United States)

Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

2016-02-01

The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

Scintillation properties of Zr co-doped Ce:(Gd, La)_2Si_2O_7 grown by the Czochralski process

International Nuclear Information System (INIS)

Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Jary, Vitezslav; Ohashi, Yuji; Pejchal, Jan; Yokota, Yuui; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

2016-01-01

(Gd_0_._7_5,Ce_0_._0_1_5,La_0_._2_3_5)_2Si_2O_7 (Ce:La-GPS) single crystals co-doped with 0, 100, 200, 500 and 1000 ppm Zr were grown by the Czochralski process, and their scintillation properties were investigated. We investigated the co-doping effect of a stable tetravalent ion in Ce:La-GPS for the first time. The scintillation decay times in the faster component were shortened with increasing the Zr concentration. While the non-co-doped sample showed ∼63 ns day time, the Zr 100, 200, 500 and 1000 ppm co-doped samples showed ∼61, ∼59, ∼57, ∼54 ns, respectively. Additionally, light output, photon nonproportional response (PNR) and other optical properties were investigated. - Highlights: • Czochralski growth of Ce:(Gd,La)_2Si_2O_7 single crystals. • Co-doping effect of a stable tetravalent ion in Ce:(Gd,La)_2Si_2O_7 system. • Photon nonproportional response of Zr co-doped Ce:(Gd,La)_2Si_2O_7.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

2016-01-07

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

Science.gov (United States)

Malguth, E.; Hoffmann, A.; Phillips, M. R.

2008-12-01

We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)-A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.

Optical properties and radiation response of Ce3+-doped GdScO3 crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke; Kochurikhin, Vladimir; Yanagida, Takayuki; Yoshikawa, Akira

2012-01-01

10%-Ce doped GdScO 3 perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO 3 crystal showed photo- and radio-luminescence peaks due to Ce 3+ of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Soluble Supercapacitors: Large and Reversible Charge Storage in Colloidal Iron-Doped ZnO Nanocrystals.

Science.gov (United States)

Brozek, Carl K; Zhou, Dongming; Liu, Hongbin; Li, Xiaosong; Kittilstved, Kevin R; Gamelin, Daniel R

2018-05-09

Colloidal ZnO semiconductor nanocrystals have previously been shown to accumulate multiple delocalized conduction-band electrons under chemical, electrochemical, or photochemical reducing conditions, leading to emergent semimetallic characteristics such as quantum plasmon resonances and raising prospects for application in multielectron redox transformations. Here, we demonstrate a dramatic enhancement in the capacitance of colloidal ZnO nanocrystals through aliovalent Fe 3+ -doping. Very high areal and volumetric capacitances (33 μF cm -2 , 233 F cm -3 ) are achieved in Zn 0.99 Fe 0.01 O nanocrystals that rival those of the best supercapacitors used in commercial energy-storage devices. The redox properties of these nanocrystals are probed by potentiometric titration and optical spectroscopy. These data indicate an equilibrium between electron localization by Fe 3+ dopants and electron delocalization within the ZnO conduction band, allowing facile reversible charge storage and removal. As "soluble supercapacitors", colloidal iron-doped ZnO nanocrystals constitute a promising class of solution-processable electronic materials with large charge-storage capacity attractive for future energy-storage applications.

Growth and scintillation properties of Ce{sup 3+}-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka; Wakahara, Shingo; Suzuki, Shotaro; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2012-12-15

The optical and scintillation properties of 0.5% fixed Ce-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} single crystals have been investigated at three different levels of Gd doping: x = 0.2, 0.4 and 0.6. Single crystal of the Ce{sup 3+}-doped (Y{sub 0.8}Gd{sub 0.2})AlO{sub 3}, (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} and (Y{sub 0.4}Gd{sub 0.6})AlO{sub 3} were successfully grown by {mu}-PD technique in nitrogen atmosphere. From X-ray diffraction analysis, no impurity phase was detected for the grown Ce-doped crystals. Ce-doped (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} crystal demonstrated highest fluorescence quantum efficiency ({proportional_to} 25%) with improvement of excitation efficiency due to the Gd-doping. When irradiated by the alpha-rays from a {sup 241}Am source, all the Ce-doped crystals showed luminescence band that corresponding to 5d (t{sub 2g})-4f transition of Ce{sup 3+}. The scintillation decay time was characterized by two components; the fast component (5-15 ns) is ascribed to 5d-4f transition of Ce{sup 3+}, while the slow one (100-200 ns) may be related to energy transfer between Ce{sup 3+} and Gd{sup 3+} ion. According to the result of {sup 137}Cs gamma-ray irradiated pulse height spectra compared with BGO scintillator, the relative scintillation light output was found to be about 12200 {+-} 1220 (Gd 20%) and 16000 {+-} 1600 (Gd 40%) ph/MeV. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solution growth of Tb doped Gd_2O_3 film

International Nuclear Information System (INIS)

Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

2016-01-01

Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

Science.gov (United States)

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Science.gov (United States)

Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

2012-02-02

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

International Nuclear Information System (INIS)

Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

2014-01-01

Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

Optical and structural properties of Cu-doped β-Ga2O3 films

International Nuclear Information System (INIS)

Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

2011-01-01

Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

International Nuclear Information System (INIS)

Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

2009-01-01

YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-06-03

We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

Science.gov (United States)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Scintillation properties of YAlO3 doped with Lu and Nd perovskite single crystals

Science.gov (United States)

Akatsuka, Masaki; Usui, Yuki; Nakauchi, Daisuke; Kato, Takumi; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-05-01

YAlO3 (YAP) single crystals doped with Lu and Nd were grown by the Floating Zone (FZ) method to evaluate their scintillation properties particularly emissions in the near-infrared (NIR) range. The Nd concentration was fixed to 0 or 1 mol% while the Lu concentration was varied from 0 to 30%. When X-ray was irradiated, the scintillation of Nd-doped samples was observed predominantly at 1064 nm due to 4F3/2 → 4I11/2 transition of Nd3+. In contrast, a weak emission around 700 nm appeared in the samples doped with only Lu, and the emission origin was attributed to defect centers. In the Nd3+-doped samples, the decay time was 94-157 μs due to the 4f-4f transitions of Nd3+ whereas the Lu-doped samples showed signal with the decay time of 1.45-1.54 ms. The emission origin of the latter signal was attributed to the perovskite lattice defect.

Enhanced photorefractive properties in Hf, Ce and Cu co-doped LiNbO{sub 3} crystals for holographic application

Energy Technology Data Exchange (ETDEWEB)

Zhang, Tao, E-mail: tzhang_hit02@yahoo.com [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Postdoctoral Research Station of Mechanical Engineering, College of Mechanical and Electrical Engineering, Harbin Engineering University, Harbin 150001 (China); Wang, Xin; Geng, Tao; Tong, Chengguo [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Kang, Chong [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Postdoctoral Research Station of Mechanical Engineering, College of Mechanical and Electrical Engineering, Harbin Engineering University, Harbin 150001 (China)

2015-04-25

Graphical abstract: Correlation spots of 200 holograms in a Hf, Ce and Cu co-doped LiNbO{sub 3}. - Highlights: • Several doped LiNbO{sub 3} crystals with various level of Hf doping were grown by Cz method. • IR peak shift is attributed to the complex defect change at different level of Hf. • Enhanced photorefractive properties have been got with higher Hf-doping level. • Reduced defect and increased photoconductivity are responsible for optical properties. • 200 holograms’ experiment is realized in a coherent volume 0.073 cm{sup 3}. - Abstract: Hf, Ce and Cu co-doped LiNbO{sub 3} crystals with various level of Hf doping were grown in air by a conventional Cz method. The infrared spectra were measured to discuss the defect structures and the mechanism of the absorption peak shift in these crystals. The light-induced scattering of the crystals was evaluated by the transmitted light method. The influence of the Hf-doping level on the photorefractive properties of Hf, Ce and Cu co-doped LiNbO{sub 3} crystals was studied via two-beam coupling. It is found that proper doping Hf is an efficient method to enhance the comprehensive photorefractive properties of the LiNbO{sub 3}. Using one of these crystals as medium, 200 holograms storage and correlation experiments based on angle fractal multiplexing have been realized in a coherent volume 0.073 cm{sup 3}. Moreover the diffraction efficiency is uniform and the storage density has reached 2.2 Gb/cm{sup 3}.

Synthesis and characterization of pure and Tb/Cu doped Alq3 nanostructures

International Nuclear Information System (INIS)

Salah, Numan; Habib, Sami S.; Khan, Zishan H.; Alharbi, Najlaa D.

2013-01-01

Tris (8-hydroxyquinoline) aluminum (Alq 3 ) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq 3 and characterize them using different techniques. Nanostructured films of Alq 3 were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq 3 films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq 3 was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq 3 nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq 3 nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq 3 nanostructures were grown using different methods. • The PL intensity of Alq 3 in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq 3 nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green band of Alq3

Effect of Mg$^{2+}$ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd$_{3}$Al$_{2}$Ga$_{3}$O$_{12}$ crystals

CERN Document Server

Lucchini, M.T.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

2016-01-01

Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

International Nuclear Information System (INIS)

Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

2006-01-01

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

Science.gov (United States)

Labis, Joselito P.; Alanazi, Anwar Q.; Albrithen, Hamad A.; El-Toni, Ahmed Mohamed; Hezam, Mahmoud; Elafifi, Hussein Elsayed; Abaza, Osama M.

2017-09-01

The parameters of pulsed laser deposition (PLD) have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO). In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ˜300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL), while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002) preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Joselito P. Labis

2017-09-01

Full Text Available The parameters of pulsed laser deposition (PLD have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO. In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ∼300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL, while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002 preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

Growth and characterization of Sm3+ doped cerium oxalate single crystals

Directory of Open Access Journals (Sweden)

Minu Mary C

2016-07-01

Full Text Available Single crystals of Sm3+ doped cerium oxalate decahydrate were synthesized using single diffusion gel technique and the conditions influencing the size, morphology, nucleation density and quality of the crystals were optimized. Highly transparent single crystals of average size 3 mm × 2 mm × 1 mm with well-defined hexagonal morphology were grown during a time period of two weeks. X-ray powder diffraction analysis revealed that the grown crystals crystallize in the monoclinic system with space group P21/c as identical with the pure cerium oxalate. The various functional groups of the oxalate ligand and the water of crystallization were identified by Fourier transform infrared spectroscopy. The photoluminescence spectrum of the Sm3+ doped cerium oxalate indicated that the Sm3+ ions are optically active in the cerium oxalate matrix. The crystal has a strong and efficient orange red emission with a wavelength peak at 595 nm and hence can be effectively used for optical amplification. Microhardness measurements of the crystal revealed that they belong to the soft material category.

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

KAUST Repository

Xing, G. Z.

2014-05-23

We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

Ce-doped LuAG single-crystal fibers grown from the melt for high-energy physics

CERN Document Server

Xu, X; Moretti, F; Pauwels, K; Lecoq, P; Auffray, E; Dujardin, C

2014-01-01

Under a stationary stable regime undoped and Ce-doped LuAG (Lu3Al5O12) single-crystal fibers were grown by a micro-pulling-down technique. The meniscus length corresponding to the equilibrium state was <200 mu m. Fluctuations in the fiber composition and pulling rate were found to have a significant effect on the properties of the fibers grown. A great improvement in the performance was found in samples containing low Ce concentrations (<= 0.1 at.\\%) and produced using pulling rates <0.5 mm min(-1). Under such conditions a good lateral surface fiber quality was obtained and light propagation was significantly improved. Conversely, a high Ce concentration and a high pulling rate resulted in a strong degradation of the fiber surface quality causing defects to appear and a decrease in light output. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Effect of Mg"2"+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd_3Al_2Ga_3O_1_2 crystals

International Nuclear Information System (INIS)

Lucchini, M.T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

2016-01-01

Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd_3Al_2Ga_3O_1_2 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd_3Al_2Ga_3O_1_2 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd_3Al_2Ga_3O_1_2 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

Optical properties and radiation response of Ce{sup 3+}-doped GdScO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kochurikhin, Vladimir [General Physics Institute, 38 Vavilov Str., 119991 Moscow (Russian Federation); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2012-12-15

10%-Ce doped GdScO{sub 3} perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO{sub 3} crystal showed photo- and radio-luminescence peaks due to Ce{sup 3+} of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

International Nuclear Information System (INIS)

Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

2014-01-01

A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

Synthesis and characterization of pure and Tb/Cu doped Alq{sub 3} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Khan, Zishan H. [Department of Applied Sciences, Faculty of Engineering and Technology, Jamia Millia, Islamia (Central University), New Delhi 110025 (India); Alharbi, Najlaa D. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Sciences Faculty for Girls, King Abdulaziz University, Jeddah-21589 (Saudi Arabia)

2013-11-15

Tris (8-hydroxyquinoline) aluminum (Alq{sub 3}) is an organic semiconductor molecule, widely used in optoelectronic devices. In this work we report on fabricating different nanostructures of Alq{sub 3} and characterize them using different techniques. Nanostructured films of Alq{sub 3} were grown using the physical vapor condensation and thermal-vapor transport methods. The as synthesized films were characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and absorption spectra. Nanoparticles and nanorods/nanowires are observed in the synthesized films. Tb and Cu doped Alq{sub 3} films were also produced and studied for their photoluminescence (PL) properties. When the original powder sample of Alq{sub 3} was excited by 378 nm, one broad PL emission band is observed at around 515 nm. The pure nanoparticles film shows similar band with a drastic increase in the intensity by a factor of 2. This has been attributed to the large specific surface area, which might has increased the absorption and then the quantum yields. The Tb and Cu doped films show also similar band with a slight shift in the peak position to the blue region, but with further enhancement in the peak intensity, particularly that of Cu. The PL intensity of Cu doped sample is around 1.5 times stronger than that of the pure Alq{sub 3} nanoparticles. This remarkable result on obtaining highly luminescent nanomaterial based on Cu doped Alq{sub 3} nanoparticles film might be useful for future organic light emitting diode display devices. -- Highlights: • Films of Alq{sub 3} nanostructures were grown using different methods. • The PL intensity of Alq{sub 3} in its nanostructure form is enhanced by a factor of 2. • This enhancement is attributed to the large specific surface area of the nanostructures. • Films of Alq{sub 3} nanoparticles doped with Tb and Cu showed further PL enhancement. • The Tb and Cu ions could contribute to the PL intensity of the green

Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

NARCIS (Netherlands)

Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

Science.gov (United States)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kusakabe, K.; Furuzuki, T.; Ohkawa, K.

2006-01-01

Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220cm 2 /Vs was recorded at the carrier density of 1.1x10 18 cm -3 . Temperature dependence of electrical property revealed that the peak mobility of 234cm 2 /Vs was obtained at 249K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11meV

Scintillation and optical properties of Pb-doped YCa{sub 4}O(BO{sub 3}){sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka, E-mail: fuji-you@tagen.tohoku.ac.jp [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); JSPS, 8 Ichibanmachi, Chiyoda-ku, Tokyo 102-8472 (Japan); Yanagida, Takayuki; Yokota, Yuui [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kawaguchi, Noriaki [Tokuyama Corporation, 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fukuda, Kentaro [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tokuyama Corporation, 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Totsuka, Daisuke [Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); NICHe, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2011-10-01

This communication reports optical properties and radiation responses of Pb{sup 2+} 0.5 and 1.0 mol%-doped YCa{sub 4}O(BO{sub 3}){sub 3} (YCOB) single crystals grown by the micro-pulling-down ({mu}-PD) method for neutron scintillator applications. The crystals had no impurity phases according to the results of X-ray powder diffraction. These Pb{sup 2+}-doped crystals demonstrated blue-light luminescence at 330 nm because of Pb{sup 2+1}S{sub 0}-{sup 3}P{sub 0,1} transition in the photoluminescence spectra. The main emission decay component was determined to be about 250-260 ns under 260 nm excitation wavelength. When irradiated by a {sup 252}Cf source, the relative light yield of 0.5% Pb{sup 2+}-doped crystal was about 300 ph/n that was determined using the light yield of a reference Li-glass scintillator.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

Directory of Open Access Journals (Sweden)

L. J. Collins-McIntyre

2014-12-01

Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

Scintillation properties of Er-doped Y3Al5O12 single crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Ogino, Hiraku; Fujimoto, Yutaka; Suzuki, Akira; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Yoshikawa, Akira

2013-01-01

Er-doped Y 3 Al 5 O 12 single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er 3+ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of 4 I 15/2 to the excited states. The photo- and radio-luminescence spectra showed Er 3+ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y 3 Al 5 O 12 was estimated to be 63% of that of Bi 4 Ge 3 O 12 . -- Highlights: •Er doped Y 3 Al 5 O 12 single crystal scintillators were grown with different Er concentrations. •Optical properties associated with 4f-4f transition were evaluated. •Radio luminescence spectra measurements were performed under 5.5 MeV alpha-ray irradiation. •The highest light yield was estimated to be 63% of that of Bi 4 Ge 3 O 12 under 5.5 MeV alpha-ray irradiation

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long

2018-05-03

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-01-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

ZnMoO4:Er3+,Yb3+ phosphor with controlled morphology and enhanced upconversion through alkali ions doping

Science.gov (United States)

Luitel, Hom Nath; Chand, Rumi; Watari, Takanori

2018-04-01

A facile hydrothermal method was used to synthesize ZnMoO4:Er3+,Yb3+ nanoparticles. The shapes and sizes of the nanoparticles were well tuned by simply monitoring the pH of the starting solution. Microballs consisting of agglomerated nanograins were observed at strong acidic condition. At mild pH, plates and rectangular particles were realized, while strong basic pH stabilized rods. Further increasing pH to extremely basic conditions (pH > 13), rods changed to fragile hairy structures. The nucleation and growth mechanism of nanograins to form different morphology nanoparticles were studied and illustrated. XRD patterns confirmed well crystalline, triclinic structure despite small amount of aliovalent metal ions doping. Under 980 nm excitation, the ZnMoO4:Er3+,Yb3+ nanophosphor exhibited strong green (centered at 530 and 560 nm) and weak red (centered at 660 nm) upconversion (UC) emissions. Substitution of part of the Zn2+ ions by monovalent alkali ions intensified the UC emission intensities drastically. The order of intensification was K+>Na+>Li+>Rb+>no alkali ion. When Zn2+ ions were substituted with 10 at% K+ ions, the green and red UC emissions intensities increased by more than 50 and 15 folds, respectively. Time dependent measurements confirmed efficient Yb to Er energy transfer in the ZnMoO4:Er3+,Yb3+,K+ nanophosphor. The optimized ZnMoO4:Er3+,Yb3+,K+ phosphor exhibited intense UC emissions with 0.31% quantum yield. The upconverted light is visible to naked eye while pumping by laser of less than 1 mW power and opens door for variety of novel applications.

Novel Mg-Doped SrMoO3 Perovskites Designed as Anode Materials for Solid Oxide Fuel Cells

Directory of Open Access Journals (Sweden)

Vanessa Cascos

2016-07-01

Full Text Available SrMo1−xMxO3−δ (M = Fe and Cr, x = 0.1 and 0.2 oxides have been recently described as excellent anode materials for solid oxide fuel cells at intermediate temperatures (IT-SOFC with LSGM as the electrolyte. In this work, we have improved their properties by doping with aliovalent Mg ions at the B-site of the parent SrMoO3 perovskite. SrMo1−xMgxO3−δ (x = 0.1, 0.2 oxides have been prepared, characterized and tested as anode materials in single solid-oxide fuel cells, yielding output powers near 900 mW/cm−2 at 850 °C using pure H2 as fuel. We have studied its crystal structure with an “in situ” neutron power diffraction (NPD experiment at temperatures as high as 800 °C, emulating the working conditions of an SOFC. Adequately high oxygen deficiencies, observed by NPD, together with elevated disk-shaped anisotropic displacement factors suggest a high ionic conductivity at the working temperatures. Furthermore, thermal expansion measurements, chemical compatibility with the LSGM electrolyte, electronic conductivity and reversibility upon cycling in oxidizing-reducing atmospheres have been carried out to find out the correlation between the excellent performance as an anode and the structural features.

Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

International Nuclear Information System (INIS)

Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

2011-01-01

In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

2009-01-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Science.gov (United States)

Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

2009-10-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

International Nuclear Information System (INIS)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

2012-01-01

We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

In-depth investigation of spin-on doped solar cells with thermally grown oxide passivation

Science.gov (United States)

Ahmad, Samir Mahmmod; Cheow, Siu Leong; Ludin, Norasikin A.; Sopian, K.; Zaidi, Saleem H.

Solar cell industrial manufacturing, based largely on proven semiconductor processing technologies supported by significant advancements in automation, has reached a plateau in terms of cost and efficiency. However, solar cell manufacturing cost (dollar/watt) is still substantially higher than fossil fuels. The route to lowering cost may not lie with continuing automation and economies of scale. Alternate fabrication processes with lower cost and environmental-sustainability coupled with self-reliance, simplicity, and affordability may lead to price compatibility with carbon-based fuels. In this paper, a custom-designed formulation of phosphoric acid has been investigated, for n-type doping in p-type substrates, as a function of concentration and drive-in temperature. For post-diffusion surface passivation and anti-reflection, thermally-grown oxide films in 50-150-nm thickness were grown. These fabrication methods facilitate process simplicity, reduced costs, and environmental sustainability by elimination of poisonous chemicals and toxic gases (POCl3, SiH4, NH3). Simultaneous fire-through contact formation process based on screen-printed front surface Ag and back surface through thermally grown oxide films was optimized as a function of the peak temperature in conveyor belt furnace. Highest efficiency solar cells fabricated exhibited efficiency of ∼13%. Analysis of results based on internal quantum efficiency and minority carried measurements reveals three contributing factors: high front surface recombination, low minority carrier lifetime, and higher reflection. Solar cell simulations based on PC1D showed that, with improved passivation, lower reflection, and high lifetimes, efficiency can be enhanced to match with commercially-produced PECVD SiN-coated solar cells.

Growth and holographic data storage properties of near-stoichiometric LiTaO{sub 3} crystals doped with Mn

Energy Technology Data Exchange (ETDEWEB)

Zhang Tao [College of Science, Harbin Engineering University, Harbin 150001 (China)], E-mail: tzhang_hit02@yahoo.com; Dong Yantang; Geng Tao; Dai Qiang [College of Science, Harbin Engineering University, Harbin 150001 (China); Xu Yuheng [School of Astronautics, Harbin Institute of Technology, Harbin 150001 (China)

2009-03-15

A series of Mn-doped near-stoichiometric LiTaO{sub 3} crystals were grown from a Li-rich (Li/Nb = 1.38, atomic ratio) and varying level of Mn-doping melt using a Cz furnace equipped with a radio frequency generator. The etching experiment reveals that as-grown polarized Mn:SLN has single ferroelectric domain structures under optical microscope. By two-beam coupling experiment, we measured and systematically analyzed the photorefractive properties such as the dynamic range, the sensitivity and the loss of signal-to-noise-ratio coefficient. Based on Mn (0.05 wt%):SLN crystal, a big capacity storage of 100 holograms in a coherent volume of 0.085 cm{sup 3} have been fulfilled successfully and the storage density arrived 0.93 Gbits cm{sup -3}.

Energy transfer and 2.0 μm emission in Tm{sup 3+}/Ho{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang; Yang, Shuo [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Wang, Cheng; Jiang, Dongsheng; Zhang, Jian; Gu, Xuemei; Zhang, Yuepin [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Chen, Baojiu, E-mail: bjchen@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province 116026 (China); Jiang, Haochuan [Ningbo Institute of Materials Technology and Engineering, the Chinese Academy of Sciences, Ningbo, Zhejiang 315211 (China)

2016-04-15

Highlights: • Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. • The maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+} (1.90 mol%)/Ho{sup 3+} (3.89 mol%) co-doped α-NaYF{sub 4}. • The obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) of Tm{sup 3+}:{sup 3}F{sub 4} are 1077 s{sup −1} and 95.0%, respectively. • The maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2}. - Abstract: Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. The energy transfer from Tm{sup 3+} to Ho{sup 3+} and the optimum fluorescence emission around 2.04 μm of Ho{sup 3+} ion were investigated based on the measured absorption spectra, emission spectra, emission cross section and decay curves under excitation of 800 nm LD. The emission intensity at 2.04 μm increased with the increase of Ho{sup 3+} concentration from 0.96 mol% to 3.89 mol% when the concentration of Tm{sup 3+} was held constantly at ∼1.90 mol%. Moreover, the maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2} and the maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+}(1.90 mol%)/Ho{sup 3+}(3.89 mol%) co-doped one. According to the measured lifetime of Tm{sup 3+} single-doped and Tm{sup 3+}/Ho{sup 3+} co-doped samples, the maximum energy transfer efficiency of Tm{sup 3+}:{sup 3}F{sub 4} level was 95.0%. Analysis on the fluorescence dynamics indicated that electric dipole–dipole is dominant for the energy transfer from Tm{sup 3+} to Ho{sup 3+}.

ODMR of shallow donors in Zn-doped LEC-grown InP

International Nuclear Information System (INIS)

Trombetta, J.M.; Kennedy, T.A.

1990-01-01

ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g = 1.20. In addition to a previously observed narrow line, the authors observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interaction with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

Science.gov (United States)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Extended x-ray absorption fine structure spectroscopy and x-ray absorption near edge spectroscopy study of aliovalent doped ceria to correlate local structural changes with oxygen vacancies clustering

Energy Technology Data Exchange (ETDEWEB)

Shirbhate, S. C.; Acharya, S. A., E-mail: saha275@yahoo.com [Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur 440033 (India); Yadav, A. K. [Atomic and molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2016-04-04

This study provides atomic scale insight to understand the role of aliovalent dopants on oxygen vacancies clustering and dissociation mechanism in ceria system in order to enhance the performance of oxy-ion conductor. Dopants induced microscale changes in ceria are probed by extended X-ray absorption fine structure spectroscopy, X-ray absorption near edge spectra, and Raman spectroscopy. The results are explored to establish a correlation between atomic level structural changes (coordination number, interatomic spacing) → formation of dimer and trimer type cation-oxygen vacancies defect complex (intrinsic and extrinsic) → dissociation of oxygen vacancies from defect cluster → ionic conductivity temperature. It is a strategic approach to understand key physics of ionic conductivity mechanism in order to reduce operating temperature of electrolytes for intermediate temperature (300–450 °C) electrochemical devices for the first time.

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

Energy Technology Data Exchange (ETDEWEB)

Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

2014-04-14

A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

BF3-doped polyaniline: A novel conducting polymer

Indian Academy of Sciences (India)

During the past two decades, both fundamental and applied research in conducting polymers has grown enormously [1]. Polyaniline (PANI) owing to its ease of synthe- sis, remarkable environmental stability, and high conductivity in the doped form, has remained one of the most thoroughly studied conducting polymers.

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

2008-01-01

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Science.gov (United States)

Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

2017-12-01

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

SIMS studies of CI- doped Zn Se epilayers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Gard, F.S.; Riley, J.D.; Lekey, R.; Usher, B.F.; Prine, K.

2004-01-01

Chlorine is one of the most used species to produce n-type zinc selenium epilayers. In this paper, we present secondary ion mass spectrometry profiles of a series of chlorine-doped zinc selenium samples, which were grown in a molecular beam epitaxy chamber. These profiles have been used to examine the limitation of secondary ion mass spectrometry analysis of narrow chlorine-delta layers. In order to covert secondary ion mass spectrometry raw data to quantified data, the depth profile from a chlorine-implanted standard sample has been used to estimate the u seful ion yield o f chlorine and thus the instrument sensitivity for chlorine in a zinc selenium matrix. The u seful ion yield a nd detection limit of chlorine in the zinc selenium host matrix were calculated to be 4.7 X 10 -17 atoms/ cm 3 , respectively

Spectral properties and laser performances of Yb3+:LaCa4O(BO3)3 crystal with high concentration doping

International Nuclear Information System (INIS)

Ji, Yuexia; Cao, Jiafeng; Xu, Jinlong; You, Zhenyu; Zhu, Zhaojie; Li, Jianfu; Wang, Yan; Tu, Chaoyang

2013-01-01

Highlights: •Yb 3+ :LaCa 4 O(BO 3 ) 3 single crystal was grown with high concentration doping. •Laser potentiality was evaluated based on the spectral and laser parameters. •Continuous wave laser operation was realized. •An output power of 0.77 W and a slope efficiency of 15.71% at 1077 nm were obtained. •The spectra and laser properties of Yb 3+ :LaCa 4 O(BO 3 ) 3 crystal were firstly reported. -- Abstract: High concentration of 15 at.% Yb 3+ doped LaCa 4 O(BO 3 ) 3 (LaCOB) crystal was grown by Czochralski technique. The absorption cross section was conclulated to be 0.63 × 10 −20 cm 2 at 977 nm and the emission cross section to be 0.39 × 10 −20 cm 2 at 1030 nm, with the FWHM of 6.15 and 33 nm respectively. Laser potentiality was evaluated based on the gain cross section σ g , the minimum inversion fraction β min and the minimum pump intensity I min , which were calculated to be 0.18 × 10 −20 cm 2 , 0.05 and 0.47 kw/cm 2 , respectively. Continuous wave laser operation was realized with an output power of 0.77 W and a slope efficiency of 15.71%. The laser emitted around 1077 nm. The radiation trapping and continuous pump mode are contributed to the lasing wavelength for present crystal

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

International Nuclear Information System (INIS)

Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

2010-01-01

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

Energy Technology Data Exchange (ETDEWEB)

Urban, J. M.; Binder, J.; Wysmołek, A. [Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland); Dąbrowski, P.; Strupiński, W. [Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland); Kopciuszyński, M.; Jałochowski, M. [Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland); Klusek, Z. [Faculty of Physics and Applied Informatics, University of Łódź, ul. Pomorska 149/153, 90-236 Łódź (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland)

2014-06-21

We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

Effect of indium and antimony doping in SnS single crystals

Energy Technology Data Exchange (ETDEWEB)

Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

2015-03-15

Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

Directory of Open Access Journals (Sweden)

Xiaoyu Bi

2018-02-01

Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

International Nuclear Information System (INIS)

Yokota, Yuui; Yanagida, Takayuki; Fujimoto, Yutaka; Nikl, Martin; Yoshikawa, Akira

2010-01-01

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce 3+ ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce 3+ 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

Energy Technology Data Exchange (ETDEWEB)

Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

1993-01-30

Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

Evaluation of Ce3+ and alkali metal ions Co-doped LiSrAlF6 crystalline scintillators

International Nuclear Information System (INIS)

Wakahara, Shingo; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Pejchal, Jan; Kurosawa, Shunsuke; Suzuki, Shotaro; Kawaguchi, Noriaki; Fukuda, Kentaro; Yoshikawa, Akira

2013-01-01

High scintillation efficiency of Eu-doped LiSrAlF 6 (LiSAF) and LiCaAlF 6 (LiCAF) codoped with alkali metal ions has been reported in our recent studies. Thus in this paper, we demonstrated the scintillation properties of 1% Ce-doped LiSAF crystals with 1% alkali metal ions co-doping to increase the light yield and understand the scintillation mechanism. The crystals showed intense emission band corresponding to the 5d-4f transition of Ce 3+ , and their light yields under thermal neutron excitation were higher than that of the Ce only doped crystal. Especially, the light yield of Ce–Na co-doped crystal exceeded about two times that of Ce only doped one. -- Highlights: ► Ce-doped and alkali metal co-doped LiSAF crystals were grown by μ-PD method. ► Alkali metal co-doped crystals showed higher light yield than Ce only doped crystal. ► Decay time of alkali metal co-doped LiSAF were longer than that of Ce only doped one

Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

2007-01-01

Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

Luminescent Enhancement of Na+ and Sm3+ Co-doping Reddish Orange SrCa3Si2O8 Phosphors

Science.gov (United States)

Chun, Fengjun; Zhang, Binbin; Li, Wen; Liu, Honggang; Deng, Wen; Chu, Xiang; Osman, Hanan; Zhang, Haitao; Yang, Weiqing

2018-04-01

Reddish orange SrCa3Si2O8 phosphors, prepared by the facile solid state reaction method, are a luminescent enhancement of Na+ and Sm3+ co-doping luminescent material. Na+ was designed to compensate the charge imbalance of Sm3+ ion substituting for the Sr2+ ion of orthorhombic SrCa3Si2O8 crystals. The results suggest that Na+ can effectively enhance the luminescent intensity of the reddish orange light peaked at about 562 nm (4 G 5/2 → 6 H 5/2), 600 nm (4 G 5/2 → 6 H 7/2) and 645 nm (4 G 5/2 → 6 H 9/2) excited by the near ultraviolet excited light 404 nm (4 L 13/2 → 6 H 5/2). The energy transfer has been further verified by the florescence lifetime. Additionally, the luminescent lifetime τ of as-grown phosphors was separated into two parts, a rapid lifetime and a slow lifetime. The average lifetime results ranged from 2.098 to 1.329 ms which were influenced by the concentration of Sm3+ doping. The systematic researches of as-grown phosphors have clearly suggested a potential application for white-light-emitting diodes ( w-LEDs).

Improved Growth Methods for LaBr3 Scintillation Radiation Detectors

International Nuclear Information System (INIS)

McGregor, Douglas S.

2011-01-01

The objective is to develop advanced materials for deployment as high-resolution gamma ray detectors. Both LaBr3 and CeBr3 are advanced scintillation materials, and will be studied in this research. Prototype devices, in collaboration Sandia National Laboratories, will be demonstrated along with recommendations for mass production and deployment. It is anticipated that improved methods of crystal growth will yield larger single crystals of LaBr3 for deployable room-temperature operated gamma radiation spectrometers. The growth methods will be characterized. The LaBr3 and CeBr3 scintillation crystals will be characterized for light yield, spectral resolution, and for hardness.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

Science.gov (United States)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

2018-06-01

In this work, we investigated the chemical bonding states in highly P-doped Si thin films epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS). HR-XPS P 2p core-level spectra clearly show spin-orbital splitting between P 2p1/2 and P 2p3/2 peaks in Si films doped with a high concentration of P. Moreover, the intensities of P 2p1/2 and P 2p3/2 peaks for P-doped Si films increase with P concentrations, while their binding energies remained almost identical. These results indicate that more P atoms are incorporated into the substitutional sites of the Si lattice with the increase of P concentrations. In order to identify the chemical states of P-doped Si films shown in XPS Si 2p spectra, the spectra of bulk Si were subtracted from those of Si:P samples, which enables us to clearly identify the new chemical state related to Sisbnd P bonds. We observed that the presence of the two well-resolved new peaks only for the Si:P samples at the binding energy higher than those of a Sisbnd Si bond, which is due to the strong electronegativity of P than that of Si. Experimental findings in this study using XPS open up new doors for evaluating the chemical states of P-doped Si materials in fundamental researches as well as in industrial applications.

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Science.gov (United States)

Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M.; Hwang, Jinwoo; Zhao, Hongping

2018-01-01

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ˜1.2 × 1018 cm-3 and ˜9.5 × 1017 cm-3 with mobilities of ˜72 cm2/V s and ˜42 cm2/V s, respectively.

Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

Energy Technology Data Exchange (ETDEWEB)

Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

2011-07-01

A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

Energy Technology Data Exchange (ETDEWEB)

Yokota, Yuui, E-mail: y-yokota@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic/6253, Prague (Czech Republic); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan)

2010-03-15

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce{sup 3+} ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce{sup 3+} 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Different doping effect on physical properties of non-magnetic Pt and Ga in CaFe4As3

International Nuclear Information System (INIS)

Wu, Dapeng

2015-01-01

Highlights: • CaFe 3.64 Pt 0.36 As 3 and CaFe 3.64 Ga 0.36 As 3 were grown using Sn flux method. • The two magnetic transition temperatures of CaFe 4 As 3 remain untouched upon Pt or Ga doping. • The effects of Pt and Ga doping give a different modification of physical properties and electronic structure in CaFe 4 As 3 . • The magnetic structure of CaFe 4 As 3 is insusceptible to non-magnetic dopants. - Abstract: We have successfully doped Pt and Ga into CaFe 4 As 3 and investigated the structure and physical properties of CaFe 3.64 X 0.36 As 3 (X = Pt, Ga). Two magnetic transition temperatures remain unchanged upon Pt or Ga doping, as confirmed by specific heat, electrical resistivity and magnetic susceptibility. The electrical resistivity of CaFe 4 As 3 is reduced by approximately half with Pt dopant but increases by an order of magnitude with Ga doping, consistent with the changes in their Hall coefficients, which indicates the effects of Pt and Ga doping give us a different modification on physical properties and electronic structure in CaFe 4 As 3

Optical spectroscopy of Ho{sup 3+}-doped SrWO{sub 4} scheelite crystal

Energy Technology Data Exchange (ETDEWEB)

Li Jianfu; Jia Guohua; Zhu Zhaojie; You Zhenyu; Wang Yan; Wu Baichang; Tu Chaoyang [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, State Key Laboratory of Structural Chemistry and National Engineering Research Center for Optoelectronic Crystalline Materials, Fuzhou, Fujian 350002 (China)

2007-04-07

Ho{sup 3+}-doped SrWO{sub 4} crystal was grown by the Czochralski method. The polarized absorption and emission spectra together with the fluorescent decay curve were measured at room temperature. The intensity parameters, radiative lifetimes and branching ratios were calculated based on the Judd-Ofelt theory. The stimulated emission cross-sections of the potential laser transitions were determined using the reciprocity method.

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Science.gov (United States)

Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

2017-01-01

GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

Thickness and Nb-doping effects on ferro- and piezoelectric properties of highly a-axis-oriented Nb-doped Pb(Zr0.3Ti0.7)O3 films

Science.gov (United States)

Zhu, Zhi-Xiang; Ruangchalermwong, C.; Li, Jing-Feng

2008-09-01

Tetragonal Nb-doped Pb(Zr0.3Ti0.7)O3 (PNZT) films with a lead oxide seeding layer were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by sol-gel processing. The as-grown PNZT films with thicknesses ranging from about 0.08 to 0.78 μm show highly a-axis preferential orientation, and their ferroelectric and piezoelectric properties improved with increasing film thickness. Due to the combined effects of Nb doping and a-axis texturing as well as reduced substrate constraint, a high d33 constant up to 196 pm/V was obtained for PNZT film at 0.78 μm in addition to a large remnant polarization of 69 μC/cm2. This well a-axis-oriented PNZT films on platinized Si with a high piezoresponse are suitable for the fabrication of microelectromechanical devices.

Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

International Nuclear Information System (INIS)

Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

2007-01-01

Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

Investigation of the structure and properties of (KxNa1-x)NbO3-based piezoelectric ceramics using both conventional and high-throughput experimentation (HTE) methods

International Nuclear Information System (INIS)

Mgbemere, Henry Ekene

2012-01-01

The structure and properties of (K x Na 1-x )NbO 3 lead-free piezoelectric ceramics was investigated in this work. Both the conventional mixed-oxide ceramics synthesis route and the high-throughput experimentation (HTE) approaches were employed for the synthesis. Structural characterization was carried out with synchrotron X-rays while the electrical properties were characterized with techniques (dielectric measurement, hysteresis measurements, impedance measurements etc). Both isovalent and aliovalent elements (Ta, Sb, Li) were used to dope (K x Na 1-x )NbO 3 ceramics in order to improve its piezoelectric properties and sinterability.

Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

DEFF Research Database (Denmark)

Kovács, A.; Sadowski, J.; Kasama, Takeshi

2013-01-01

The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate...... in annealed GaMnAs layers doped with low Mn concentrations is proposed....

Space growth studies of Ce-doped Bi12SiO20 single crystal

International Nuclear Information System (INIS)

Zhou, Y.F.; Wang, J.C.; Tang, L.A.; Pan, Z.L.; Chen, N.F.; Chen, W.C.; Huang, Y.Y.; He, W.

2004-01-01

Ce-doped Bi 12 SiO 20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one

Crystal growth, optical properties, and laser operation of Yb3+-doped NYW single crystal

Science.gov (United States)

Cheng, Y.; Xu, X. D.; Yang, X. B.; Xin, Z.; Cao, D. H.; Xu, J.

2009-11-01

Laser crystal Yb3+-doped NaY(WO4)2 (Yb:NYW) with excellent quality has been grown by Czochralski technique. The rocking curves from (400) plane of as-grown Yb:NYW crystal was measured and the full-width value at half-maximum was 19.92″. The effective segregation coefficients were measured by the X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Yb:NYW crystal were measured at room temperature. The fluorescence decay lifetime of Yb3+ ion in NYW crystal has been investigated. The spectroscopic parameters of Yb:NYW crystal are calculated and compared with those of Yb:YAG crystal. A continuous wave output power of 3.06 W at 1031 nm was obtained with a slope efficiency of 42% by use of diode pumping.

n-Type Doping and Morphology of GaAs Nanowires in Aerotaxy

Energy Technology Data Exchange (ETDEWEB)

Metaferia, Wondwosen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sivakumar, Sudhakar [Lund University; Persson, Axel R. [Lund University; Geijselaers, Irene [Lund University; Wallenberg, L. Reine [Lund University; Deppert, Knut [Lund University; Samuelson, Lars [Lund University; Magnusson, Martin [Lund University

2018-04-17

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

Zn-vacancy related defects in ZnO grown by pulsed laser deposition

Science.gov (United States)

Ling, F. C. C.; Luo, C. Q.; Wang, Z. L.; Anwand, W.; Wagner, A.

2017-02-01

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

Photoluminescence characteristics of Li-doped CaTiO{sub 3}:Pr{sup 3+} thin films grown on Si (100) substrate by PLD

Energy Technology Data Exchange (ETDEWEB)

Yang, Hyun Kyoung; Chung, Jong Won; Moon, Byung Kee; Choi, Byung Chun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of); Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.k [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of); Jang, Ki-wan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo [Department of Electronic Materials Engineering, Silla University, Busan, 617-736 (Korea, Republic of); Kim, Kwang Ho [School of Materials Science and Engineering, Pusan National University, Busan, 609-735 (Korea, Republic of)

2010-09-01

The effects of Li-doped CaTiO{sub 3}:Pr{sup 3+} thin films have been investigated by varying the lithium ion concentrations from 0 to 5 wt.%. The films have been deposited on Si (100) substrate using a pulsed laser deposition technique. Structural properties of these films have been studied by the measurement of their XRD, SEM, and AFM. The variation of Li{sup +} concentration influences the crystallinity and surface morphology of the CaTiO{sub 3}:Pr{sup 3+} thin films. As Li{sup +} content increases from 0 to 1 wt.%, the crystallinity and intensity of emission increases. The dominant emission is from {sup 1}D{sub 2} {yields} {sup 3}H{sub 4} transition at 613 nm. The {sup 1}D{sub 2} emission quenching has also been observed in highly doped sample and is related to the cross-relaxation process between Pr{sup 3+} ions.

Growth and spectroscopic properties of Yb{sup 3+}-doped Li{sub 6}Y(BO{sub 3}){sub 3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Brenier, A. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France)]. E-mail: brenier@pcml.univ-lyon1.fr; Yoshikawa, A. [Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Lebbou, K. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Jouini, A. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Aloui-Lebbou, O. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Boulon, G. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Fukuda, T. [Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan)

2007-10-15

The spectroscopic properties of high-quality Czochralski grown 20% Yb{sup 3+}-doped Li{sub 6}Y(BO{sub 3}){sub 3} single crystal as new promising laser material are presented. The crystal was seeded-grown in the <0 1 0> direction and its crystallinity was measured using X-ray rocking curve analysis. Low temperature transmission spectrum exhibits broad bands in a short range of wavelengths and two sharp lines at 972.5 and 978 nm, interpreted as two zero-lines of two nonequivalent Yb{sup 3+} centers inside the lattice. The fluorescence lifetimes associated to these two intense lines are different: 0.867 and 1.33 ms. An attempt of determination of the Stark sublevels energies of the {sup 4}F{sub 5/2} and {sup 4}F{sub 7/2} manifolds of the two Yb{sup 3+} nonequivalent ions is given. The polarized absorption and emission spectra were also recorded at room temperature and we conclude that the most favorable emission line for laser application could be around 1042 nm in n {sub g} polarization.

Raman and NMR study in MgO-doped LiNbO3 crystal

International Nuclear Information System (INIS)

Hu, L.J.; Chang, Y.H.; Chang, C.S.; Yang, S.J.; Hu, M.L.; Tse, W.S.

1991-01-01

This paper reports on the MgO-doped LiNbO 3 crystal grown and studied by NMR and Raman techniques. The solubility of MgO in the LiNbO 3 crystal is as much as 30 mole %. It is shown in NMR spectra that the number of Nb 5+ cations at A-site (Li-site) decrease as Mg concentration increased when the Mg content is lower than 5 mole %. The vibration of (NbO 6 ) octahedron and translations involving Li + and Mg 2+ cations motion can be identified by replacing Nb 5+ and Li + cations with Ta 5+ and Mg 2+ cations through Raman spectra. The 115 cm -1 and 151 cm -1 peaks are due to the translational modes of Mg 2+ and Li + cations. The doping mechanisms of MgO are proposed

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

Science.gov (United States)

Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

2014-10-01

Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

International Nuclear Information System (INIS)

Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka

2014-01-01

Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles.

Science.gov (United States)

Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

2014-10-01

Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

Growth and scintillation properties of Pr doped YAP with different Pr concentrations

International Nuclear Information System (INIS)

Yanagida, Takayuki; Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki; Yamaji, Akihiro; Yokota, Yuui; Yoshikawa, Akira

2010-01-01

Pr 3+ 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down (μ-PD) method. Pr 3+ 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The μ-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400±2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3+ 5d-4f transition.

Growth and scintillation properties of Pr doped YAP with different Pr concentrations

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamaji, Akihiro [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2010-11-21

Pr{sup 3+} 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down ({mu}-PD) method. Pr{sup 3+} 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The {mu}-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under {sup 137}Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400{+-}2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr{sup 3+} 5d-4f transition.

Physical properties of Fe doped Mn3O4 thin films synthesized by SILAR method and their antibacterial performance against E. coli

Directory of Open Access Journals (Sweden)

M.R. Belkhedkar

2016-09-01

Full Text Available Nanocrystalline Fe doped Mn3O4 thin films were deposited by successive ionic layer adsorption and reaction method onto glass substrates. The X-ray diffraction study revealed that Fe doped Mn3O4 films are nanocrystalline in nature. The morphological investigations were carried out by using field emission scanning electron and atomic force microscopy studies. The optical absorption measurements showed that Mn3O4 films exhibit direct band gap energy of the order of 2.78 eV and it increased to 2.89 eV as the percentage of Fe doping in it increases from 0 to 8 wt.%. The room temperature electrical resistivity of Mn3O4 increases from 1.84 × 103 to 2.64 × 104 Ω cm as Fe doping increases from 0 to 8 wt.%. The SILAR grown Mn3O4 showed antibacterial performance against Escherichia coli bacteria which improved remarkably with doping.

Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

Science.gov (United States)

Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

2018-03-01

Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

2012-01-01

Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

Optical properties of Ho3+-doped NaGd(WO4)2 crystal for laser materials

International Nuclear Information System (INIS)

Wang, Hongyan; Li, Jianfu; Jia, Guohua; You, Zhenyu; Yang, Fugui; Wei, Yanping; Wang, Yan; Zhu, Zhaojie; Lu, Xiuai; Tu, Chaoyang

2007-01-01

Holmium doped sodium gadolinium tungstate crystals with sizes of about O20 mm x 40 mm were grown successfully by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra and fluorescence decay curve of Ho 3+ -doped NaGd(WO 4 ) 2 have been recorded at room temperature. Based on the Judd-Ofelt theory, three intensity parameters were obtained. The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetimes as well as the branching ratios were calculated. The fluorescence lifetime τ f of the 5 S 2 level was measured to be 5 μs

Scintillation and optical properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals

Energy Technology Data Exchange (ETDEWEB)

Mori, Masaki, E-mail: masaki.mori.mz4@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Nakauchi, Daisuke; Okada, Go [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Fujimoto, Yutaka [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Kawaguchi, Noriaki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Koshimizu, Masanori [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Yanagida, Takayuki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)

2017-06-15

The single crystals of 0, 0.6, 1, 1.6 and 2 mol% Ce doped CaGdAl{sub 3}O{sub 7} (Ce:CGAM) were grown by the Floating Zone method, and investigated on photoluminescence (PL) and scintillation properties. In the PL spectra, a broad emission appeared over 380–500 nm under 280 and 360 nm excitations with the quantum yield of 33.8–38.8%. Under a vacuum ultraviolet excitation (90 nm) using a synchrotron source, non-doped CGAM single crystal showed broad emissions over 250–650 nm. The PL decay time profiles followed a monotonic exponential decay with a decay time constant of around 33 ns. The scintillation spectra were similar to those of PL. All of the samples exhibited a clear photoabsorption peak and Compton edge in the pulse height spectra measured under {sup 137}Cs γ-ray irradiation, and the absolute scintillation light yield (LY) was highest for the 2% Ce-doped sample with the value of 3300±300 ph/MeV. The scintillation decay profiles were approximated by a third order exponential decay function, and the extracted decay time of Ce{sup 3+} emission component was around 36–44 ns. Among all the samples, 2%Ce:CGAM single crystal sample showed the best afterglow level as a scintillator under X-ray irradiation. - Highlights: •Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals were synthesized by the FZ method. •Optical and scintillation properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} were investigated. •Photoabsorption peak in a pulse height spectrum was clearly observed under γ-rays.

C-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film grown on Nb doped SrTiO3 substrate by pulsed laser deposition

International Nuclear Information System (INIS)

Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

2007-01-01

A c-axial oriented (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 thin film has been grown on a (0 0 1) Nb doped SrTiO 3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm -1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F3 single crystals

International Nuclear Information System (INIS)

Kamada, Kei; Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira; Nikl, Martin

2011-01-01

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd 0.5 Y 0.5 F 3 single crystals were grown by the μ-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce 3+ -perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce 3+ → (Gd 3+ ) n → the perturbed Ce 3+ sites was evidenced through observation of decay time shortening of the regular Ce 3+ and Gd 3+ centers and the change between the Gd 3+ and Ce 3+ -perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd 0.5 Y 0.5 F 3 sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Lu{sub 2}O{sub 3}:Tb,Hf storage phosphor

Energy Technology Data Exchange (ETDEWEB)

Kulesza, Dagmara; Trojan-Piegza, Joanna [Faculty of Chemistry, University of Wroclaw, 14 F. Joliot-Curie Street, 50-383 Wroclaw (Poland); Zych, Eugeniusz, E-mail: zych@wchuwr.p [Faculty of Chemistry, University of Wroclaw, 14 F. Joliot-Curie Street, 50-383 Wroclaw (Poland)

2010-03-15

Lu{sub 2}O{sub 3}:Tb,Hf ceramics containing 0.1% of Tb and 0-1.5% of Hf were prepared in reducing atmosphere at 1700 {sup o}C and their thermoluminescence properties were systematically studied. For comparison Tb,Ca co-doped specimen was also fabricated and investigated. The Tb,Hf ceramics shows basically a single TL band located around 180 {sup o}C as found with heating rate of 15 {sup o}C/min. Ceramics singly doped with Tb show complex TL glow curves indicating the presence of traps of very different depths. On the other hand Tb,Ca co-doping is beneficial for the development of shallow traps with the main TL band around 70 {sup o}C. Hence, the aliovalent impurities, Ca{sup 2+} and Hf{sup 4+}, strongly influenced the traps structure in Lu{sub 2}O{sub 3}:Tb ceramics, each of them in its own specific way. Isothermal decay of Lu{sub 2}O{sub 3}:Tb,Hf at 185 {sup o}C was recorded and its shape suggest that multiple hole trapping occurs in the Lu{sub 2}O{sub 3}:Tb,Hf ceramics. Due to the different traps depths the Lu{sub 2}O{sub 3}:Tb,Hf ceramics possess properties typical for storage phosphors, while Lu{sub 2}O{sub 3}:Tb,Ca is a persistent luminescent material rather.

Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Glaser, E.R.; Shanabrook, B.V.; Roussos, J.A.

2002-01-01

Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance-voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Aa Be:GaN layer at the interface reduces these currents by three orders of magnitude

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

Science.gov (United States)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Directory of Open Access Journals (Sweden)

Hanjong Paik

2017-11-01

Full Text Available Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001 DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2 of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO2 crystallographic shear defects or point defects—significantly reduce the electron mobility.

Epitaxial growth of Er, Ti doped LiNbO3 films prepared by sol-gel method

International Nuclear Information System (INIS)

Takahashi, Makoto; Yoshiga, Tsuyoshi; Kajitani, Naofumi; Takeda, Yuki; Sato, Shoji; Wakita, Koichi; Ohnishi, Naoyuki; Hotta, Kazutoshi; Kurachi, Masato

2006-01-01

Erbium (Er 3+ ) doped lithium niobate (LiNbO 3 ) thick films were deposited on z-cut congruent LiNbO 3 (LN) substrate by the sol-gel method from the 0.20 mol/dm 3 precursor solution containing various Er 3+ concentration and 0.10 mol/dm 3 poly(vinyl alcohol) (PVA), and their crystal characteristics were evaluated. The Er 3+ concentration in the LN film was controlled by the Er 3+ concentration in the starting solution. The orientation relationships between Er doped LN films and substrates were determined by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and (006) oriented Er doped LN epitaxial layers with parallel epitaxial relationships could be grown on the z-cut LN wafer. Moreover, it was made clear from the electron beam diffraction measurements that the film came to be polycrystalline, when the Er concentration was over 3 mol%. The refractive index of Er-doped LN films decreased with increasing Er concentration. 1.5 mol% Ti: 1.0 mol% Er LN films, which acted as a waveguide, were prepared by our so-gel method. It showed the 1530 nm emission by 980 nm excitation, which was considered to be due to the Er 3+ corresponding to the 4 I 13/2 → 4 I 15/2 transition. (author)

Structural, magnetic and dielectric investigations in antimony doped nano-phased nickel-zinc ferrites

Energy Technology Data Exchange (ETDEWEB)

Lakshmi, Ch.S. [Department of Physics, Regency Institute of Technology, Adivipolam Yanam 533464, Pondicherry (India); Sridhar, Ch.S.L.N. [Department of Physics, Vignana Bharathi Institute of Technology, Aushapur(v) Ghatkesar (M), Hyderabad 501301, Telangana (India); Govindraj, G. [Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, R.V.Nagar, Kalapet, Pondicherry 605014 (India); Bangarraju, S. [Department of Physics, Andhra University, Visakhapatnam 530003, Andhrapradesh (India); Potukuchi, D.M., E-mail: potukuchidm@yahoo.com [Department of Physics, University College of Engineering, Jawaharlal Nehru Technological University:Kakinada, Kakinada 533003 (India)

2015-02-15

Nanocrystalline Ni–Zn–Sb ferrites synthesized by hydrothermal method are reported. Influence of Sb{sup 5+} ions on structural, magnetic and dielectric properties of ferrites is studied. Phase identification, lattice parameter and crystallite size studies are carried out using by X-ray diffraction (XRD). Addition of dopant resulted for decrease in lattice parameter. Crystallite size gets reduced from 62 nm to 38 nm with doping of Antimony. Crystallite size and porosity exhibit similar trends with doping. Morphological study is carried out by Field Emission Scanning Electron Microscopy (FESEM). Strong FTIR absorption bands at 400–600 cm{sup −1} confirm the formation of ferrite structure. Increase of porosity is attributed to the grain size. Doping with Antimony results for decrease in saturation magnetization and increase in coercivity. An initial increase of saturation magnetization for x=0.1 is attributed to the unusually high density. Reversed trend of coercivity with crystallite size are observed. Higher value of dielectric constant ε′(ω) is attributed to the formation of excess of Fe{sup 2+} ions caused by aliovalent doping of Sb{sup 5+} ions. Variation of dielectric constant infers hopping type of conductivity mechanism. The dielectric loss factor tanδ attains lower values of ∼10{sup −2}. High ac resistivity ρ(ω) of 10{sup 8} Ω cm is witnessed for antimony doped ferrites. Higher saturation magnetization and enhanced dielectric response directs for a possible utility as microwave oscillators and switches.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Different doping effect on physical properties of non-magnetic Pt and Ga in CaFe{sub 4}As{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Wu, Dapeng

2015-02-25

Highlights: • CaFe{sub 3.64}Pt{sub 0.36}As{sub 3} and CaFe{sub 3.64}Ga{sub 0.36}As{sub 3} were grown using Sn flux method. • The two magnetic transition temperatures of CaFe{sub 4}As{sub 3} remain untouched upon Pt or Ga doping. • The effects of Pt and Ga doping give a different modification of physical properties and electronic structure in CaFe{sub 4}As{sub 3}. • The magnetic structure of CaFe{sub 4}As{sub 3} is insusceptible to non-magnetic dopants. - Abstract: We have successfully doped Pt and Ga into CaFe{sub 4}As{sub 3} and investigated the structure and physical properties of CaFe{sub 3.64}X{sub 0.36}As{sub 3} (X = Pt, Ga). Two magnetic transition temperatures remain unchanged upon Pt or Ga doping, as confirmed by specific heat, electrical resistivity and magnetic susceptibility. The electrical resistivity of CaFe{sub 4}As{sub 3} is reduced by approximately half with Pt dopant but increases by an order of magnitude with Ga doping, consistent with the changes in their Hall coefficients, which indicates the effects of Pt and Ga doping give us a different modification on physical properties and electronic structure in CaFe{sub 4}As{sub 3}.

Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

Science.gov (United States)

Guo, Daoyou; Qin, Xinyuan; Lv, Ming; Shi, Haoze; Su, Yuanli; Yao, Guosheng; Wang, Shunli; Li, Chaorong; Li, Peigang; Tang, Weihua

2017-11-01

Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.[Figure not available: see fulltext.

CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

Energy Technology Data Exchange (ETDEWEB)

Bayansal, F., E-mail: fbayansal@gmail.com [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Gülen, Y. [Department of Physics, Faculty of Arts and Sciences, Marmara University, İstanbul (Turkey); Şahin, B. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Kahraman, S. [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Çetinkara, H.A. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey)

2015-01-15

Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E{sub g} values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1{sup ¯}11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping.

CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

International Nuclear Information System (INIS)

Bayansal, F.; Gülen, Y.; Şahin, B.; Kahraman, S.; Çetinkara, H.A.

2015-01-01

Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E g values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1 ¯ 11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping

Europium and samarium doped calcium sulfide thin films grown by PLD

International Nuclear Information System (INIS)

Christoulakis, S.; Suchea, M; Katsarakis, N.; Koudoumas, E

2007-01-01

Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were prepared by the pulsed laser deposition technique using sintered targets. A typical homemade deposition chamber and XeCl excimer laser (308 nm) were employed and the films were deposited in helium atmosphere onto silicon and corning glass substrates. Structural investigations carried out by X-ray diffraction and atomic force microscopy showed a strong influence of the deposition parameters on the film properties. The films grown had an amorphous or polycrystalline structure depending on growth temperature and the number of pulses used, the same parameters affecting the film roughness, the grain shape and dimensions, the film thickness and the optical transmittance. This work indicates that pulsed laser deposition can be a suitable technique for the preparation of CaS:Eu,Sm thin films, the film characteristics being controlled by the growth conditions

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

International Nuclear Information System (INIS)

Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

2001-01-01

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

Science.gov (United States)

Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-01

An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

Thermoelectric study of Ag doped SnSe-Sb2Se3 based alloy

Science.gov (United States)

Das, Anish; Talukdar, M.; Kumar, Aparabal; Sarkar, Kalyan Jyoti; Dhama, P.; Banerji, P.

2018-05-01

In this article we have synthesized p-type alloy of SnSe and Sb2Se3 (10 atomic %) to study the thermoelectric transport properties. The alloy was prepared by melt grown technique followed by spark plasma sintering and latter doped with 2 atomic % Ag to compensate the carrier density in order to achieve higher electrical conductivity (σ). Out of these, the doped sample resulted in the maximum figure of merit, ZT˜0.7 at 773 K due to the existence of the secondary phase AgSbSe2 and reduced lattice thermal conductivity (0.61 W m-1 K-1 at 300 K). The fitted lattice thermal conductivity shows that point defect and Umklapp scattering are the primary process of phonon scattering for all the samples whereas the fitted mobility data confirms acoustic phonon scattering along with point defect and grain boundary scattering to be the main carrier scattering mechanism. More over room temperature carrier density and electrical conductivity are found to increase for the doped sample which further corroborate (90%)SnSe-(10%)Sb2Se3:2%Ag to be a potential candidate for highly efficient thermoelectric materials.

Acceptor Type Vacancy Complexes In As-Grown ZnO

International Nuclear Information System (INIS)

Zubiaga, A.; Tuomisto, F.; Zuniga-Perez, J.

2010-01-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li Zn and Na Zn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Acceptor Type Vacancy Complexes In As-Grown ZnO

Science.gov (United States)

Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

2010-11-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Carbon doped lanthanum aluminate (LaAlO3:C) synthesized by solid state reaction for application in UV thermoluminescent dosimetry

International Nuclear Information System (INIS)

Alves, N.

2015-01-01

In this work we discuss the TL output for LaAlO 3 :C crystals grown by using three different combinations of Al 2 O 3 , La 2 O 3 and carbon atoms during the synthesis process. Recently, LaAlO 3 single crystals, co-doped with Ce 3+ and Dy 3+ rare earth trivalent ions and grown under hydrothermal conditions, have been reported to show high thermoluminescent response (TL) when exposed to low levels of ultraviolet radiation (UVR). However, undoped LaAlO 3 synthesized by solid state reaction method from the 1:1 mixture of aluminum and lanthanum oxide under reducing atmosphere revealed to have still higher thermoluminescent sensitivity to UV photon fields than the co-doped with Ce 3+ and Dy 3+ . It is well known that carbon doped aluminum oxide monocrystals have excellent TL and photoluminescent response properties for X-rays, UV and gamma radiation fields. Thus, we conducted three different syntheses of LaAlO 3 by this solid state reaction method, doping the mixture with carbon. The lanthanum aluminate polycrystals were synthesized from the 1:1 mixture of aluminum and lanthanum oxide, adding 0.1wt.% carbon and annealed at 1700°C for two hours in hydrogen atmosphere. The X-ray diffraction analysis revealed the formation of rhombohedral LaAlO 3 crystallographic phase, however a small percentage (15%) of Al 2 O 3 has been also identified. The UV-Vis absorbance spectra were obtained and F and F + - center were ascribed. The UV irradiations were carried out using a commercial 8W UV lamp. Thermoluminescence measurements were performed at a Harshaw 4500 TL reader. All compositions investigated have shown high TL sensitivity to UVR. (author)

Properties of CoSb{sub 3} films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Christen, H M; Mandrus, D G; Norton, D P; Boatner, L A; Sales, B C

1997-07-01

Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

Optical properties of single doped Cr3+ and co-doped Cr3+-Nd3+ aluminum tantalum tellurite glasses

International Nuclear Information System (INIS)

Rodriguez-Mendoza, U.R.; Speghini, A.; Jaque, D.; Zambelli, M.; Bettinelli, M.

2004-01-01

The optical properties for single doped Cr 3+ and co-doped Cr 3+ -Nd 3+ aluminum tantalum tellurite glasses have been studied as a function of temperature. For the single doped glass, the existence of two bands in the emission spectra at low temperature indicates the presence of two different sites for the Cr 3+ ions, labelled as usual as low- and high-field sites. The broad band centred in the Near Infrared region, corresponds to low-field sites transition 4 T 2 → 4 A 2 , and the narrow band centred at approximately 715 nm to the high-field sites transition 2 E→ 4 A 2 . The emission intensity for both high- and low-field sites shows a strong decrease with increasing temperature, with the emission for the former sites vanishing at RT. In both cases the quenching observed with the increase of temperature can be ascribed to the presence of non-radiative relaxation mechanisms. Experimental observations for the co-doped glass show that both radiative and non-radiative energy transfer processes from Cr 3+ to Nd 3+ are present

Crystal growth and scintillation properties of Er-doped Lu3Al5O12 single crystals

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

2012-01-01

Er-doped Lu 3 Al 5 O 12 (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down (μ-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under 241 Am α-ray excitation indicated host emission at approximately 350 nm and Er 3+ 4f-4f emissions. According to the pulse height spectra recorded under γ-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The γ-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 μs and 6-10 μs).

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Science.gov (United States)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

NARCIS (Netherlands)

García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Improving the characteristics of Sn-doped In2O2 grown at room temperature with oxygen radical-assisted electron beam deposition

Science.gov (United States)

Oh, Min-Suk; Seo, Inseok

2017-07-01

Sn-doped In2O3 (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm2/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ˜ 2.8 × 10-2 Ω-1, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Luminescent and scintillation properties of Sc3+and La3+doped Y2SiO5 powders and single crystalline films

International Nuclear Information System (INIS)

Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Voloshynovskii, A.; Vistovskiy, V.; Paprocki, K.; Mosińska, L.; Bilski, P.; Twardak, A.; Fedorov, A.; Nikl, M.; Mares, J.A.

2016-01-01

The paper is dedicated to the investigation of the luminescence of Sc 3+ and La 3+ isoelectronic impurities in Y 2 SiO 5 (YSO) single crystalline films (SCF), grown by the liquid phase epitaxy (LPE) method, and in the powder analogs of these compounds prepared using the ceramic technology. The Sc 3+ and La 3+ dopants replacing the Y 3+ cations in Y1and Y2 positions of YSO host introduce the strong complex emission bands in the UV range peaked at 330 and 345 nm, respectively. The Sc 3+ and La 3+ dopant in YSO matrix yields also the strong TSL peaks at 400 and 405 K related to the ScY and ScLa centers formation, respectively. The luminescence and scintillation properties of YSO SCFs doped with Sc 3+ and La 3+ ions and co-doped with Ce 3+ ions on the trace impurity level have been also studied in our work. We have found that the light yield (LY) of these YSO:Sc and YSO:La SCFs can reach 50–65% of LY in reference YSO:Ce SCF due to strong quenching influence of Pb 2+ ions. Finally, the potential of Sc 3+ and La 3+ doped SCF of orthosilicates for creation of heavy scintillation screens, emitting in the UV range, is discussed.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

In situ photoelectron spectroscopy of LaMnO3 and La0.6Sr0.4MnO3 thin films grown by laser molecular beam expitaxy

International Nuclear Information System (INIS)

Oshima, M.; Kobayashi, D.; Horiba, K.; Ohguchi, H.; Kumigashira, H.; Ono, K.; Nakagawa, N.; Lippmaa, M.; Kawasaki, M.; Koinuma, H.

2004-01-01

We have constructed a high-resolution photoelectron spectroscopy system combined with a laser molecular beam epitaxy (laser-MBE) chamber and have characterized composition-controlled La 1-x Sr x MnO 3 (LSMO) thin films. The importance of atomically flat surfaces by in situ photoelectron spectroscopy for revealing the intrinsic electronic structures has been demonstrated by comparing O1s, O2s and valence band spectra from the laser-MBE-grown LaMnO 3 and LSMO films with those from the scraped samples. Even for the laser-MBE-grown LSMO films, core levels and band structure exhibit strong dependence on surface morphology. For atomically flat LSMO films, we have also elucidated the hole-doping features into Mn3d e g band by substituting La with Sr by resonant photoelectron spectra

Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

Science.gov (United States)

Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

2018-02-01

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

Doping effect on the optical properties of ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Stoehr, M. [Frederick Seitz Materials Research Laboratory, University of Illinois,104 South Goodwin Avenue, Urbana, IL 61801 (United States); Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Juillaguet, S. [Groupe d' Etude des Semi-conducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Kyaw, T.M.; Wen, J.G. [Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France)

2007-04-15

High quality undoped and Ga{sub 2}O{sub 3} or In{sub 2}O{sub 3} doped ZnO nanostructures are grown by chemical vapor transport and condensation. The doping effect on the optical properties is investigated by photoluminescence. At room temperature, photoluminescence on Ga{sub 2}O{sub 3} doped ZnO nanostructures reveals an enhancement of the ultraviolet near band edge emission at 390 nm, while the intensity of the deep level emission at 530 nm weakens. At 5 K, an intense neutral-donor-bound exciton (D{sup 0}X) line dominates the undoped and doped ZnO photoluminescence spectra. The presence of well resolved two-electron satellite lines allow to determine the type of donors. At 5 K, the results indicate that ZnO nanostructures grown with 10% of Ga{sub 2}O{sub 3} display an excellent optical quality, proved by an intense D{sup 0}X line, a high intensity ratio between the D{sup 0}X line and the deep level emission as well as the presence of numerous phonon replicas of the main lines. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of chemical redox on Gd-doped ceria mass diffusion

DEFF Research Database (Denmark)

Ni, De Wei; de Florio, D.Z.; Marani, Debora

2015-01-01

The valence and size of cations influence mass diffusion and oxygen defects in ceria. Here we show that reduction of Ce4+ to Ce3+, at high temperatures and low oxygen activity, activates fast diffusion mechanisms which depend on the aliovalent cation concentration. As a result, polycrystalline so...... solid solutions with enhanced electrochemical properties are formed....

Study of grown-in and radiation-induced defects in indium phosphide

International Nuclear Information System (INIS)

Shaban, E.H.

1986-01-01

This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10 15 cm -3 . The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Kamada, Kei, E-mail: k-kamada@furukawakk.co.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Furukawa Co. Ltd. (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai (Japan); Nikl, Martin [Institute of Physics AS CR (Czech Republic)

2011-12-11

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} single crystals were grown by the {mu}-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce{sup 3+}-perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce{sup 3+}{yields} (Gd{sup 3+}){sub n}{yields} the perturbed Ce{sup 3+} sites was evidenced through observation of decay time shortening of the regular Ce{sup 3+} and Gd{sup 3+} centers and the change between the Gd{sup 3+} and Ce{sup 3+}-perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Carbon doped lanthanum aluminate (LaAlO3:C) UV thermoluminescent properties synthesized by solid state reaction with three different mixing methodologies

International Nuclear Information System (INIS)

Alves, N.

2017-01-01

In this work we discuss the thermoluminescent (TL) response for LaAlO 3 :C crystals grown by using three different combinations of Al 2 O 3 , La 2 O 3 and carbon atoms during the synthesis process. Recently, LaAlO 3 single crystals, co-doped with Ce 3+ and Dy 3+ rare earth trivalent ions and grown under hydrothermal conditions, have been reported to show high thermoluminescent response (TL) when exposed to low levels of ultraviolet radiation (UVR). However, undoped LaAlO 3 synthesized by solid state reaction method from the 1:1 mixture of aluminum and lanthanum oxide under reducing atmosphere revealed to have still higher thermoluminescent sensitivity to UV photon fields than the co-doped with Ce 3+ and Dy 3+ . It is well known that carbon doped aluminum oxide monocrystals have excellent TL and photoluminescent response properties for X-rays, UV and gamma radiation fields. Thus, we conducted three different syntheses of LaAlO 3 by the solid state reaction method, doping the mixture with carbon. The lanthanum aluminate polycrystals were synthesized from the 1:1 mixture of aluminum and lanthanum oxide, adding 0.1wt.% carbon and annealed at 1700°C for two hours in hydrogen atmosphere. The X-ray diffraction analysis revealed the formation of rhombohedral LaAlO 3 crystallographic phase, however a small percentage (15%) of Al 2 O 3 has been also identified. The UV-Vis absorbance spectra were obtained and F and F + - center were ascribed. The UV irradiations were carried out using a commercial 8W UV lamp. Thermoluminescence measurements were performed at a Harshaw 4500 TL reader. All compositions investigated have shown high TL sensitivity to UVR. (author)

Scintillation properties of Ce-doped LuLiF{sub 4} and LuScBO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.jp [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kawaguchi, Noriaki [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Yokota, Yuui [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kamada, Kei [Materials Research Laboratory, Furukawa, Co. Ltd., 1-25-13 Kannondai, Tsukuba, Ibaragi 305-0856 (Japan); Totsuka, Daisuke [Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho, Tatebayashi, Gunma 374-0047 (Japan); Hatamoto, Shun-Ichi [Corporate Research and Development Center, Mitsui Mining and Smelting Co., Ltd., 1333-2 Haraichi, Ageo Saitama 362-0023 (Japan); Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

2011-10-01

The crystals of 1 mol% Ce-doped LuLiF{sub 4} (Ce:LLF) grown by the micro-pulling down ({mu}-PD) method and 1 mol% Ce-doped LuScBO{sub 3} (Ce:LSBO) grown by the conventional Czochralski (Cz) method were examined for their scintillation properties. Ce:LLF and Ce:LSBO demonstrated {approx}80% transparency at wavelengths longer than 300 and 400 nm, respectively. When excited by {sup 241}Am {alpha}-ray to obtain radioactive luminescence spectra, Ce{sup 3+} 5d-4f emission peaks were detected at around 320 nm for Ce:LLF and at around 380 nm for Ce:LSBO. In Ce:LSBO, the host luminescence was also observed at 260 nm. By recording pulse height spectra under {gamma}-ray irradiation, the absolute light yield of Ce:LLF and Ce:LSBO was measured to be 3600{+-}400 and 4200{+-}400 ph/MeV, respectively. Decay time kinetics was also investigated using a pulse X-ray equipped streak camera system. The main component of Ce:LLF was {approx}320 ns and that of Ce:LSBO was {approx}31 ns. In addition, the light yield non-proportionality and energy resolution against the {gamma}-ray energy were evaluated.

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

Science.gov (United States)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-12-01

A notable disorder crystal Yb:Ca3La2(BO3)4 crystal with Yb3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca3La2(BO3)4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca3La2(BO3)4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler.

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

International Nuclear Information System (INIS)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-01-01

A notable disorder crystal Yb:Ca 3 La 2 (BO 3 ) 4 crystal with Yb 3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca 3 La 2 (BO 3 ) 4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca 3 La 2 (BO 3 ) 4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler. (paper)

Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis

CSIR Research Space (South Africa)

Motaung, DE

2014-08-01

Full Text Available Surface Science Vol. 311, pp 14-26 Defect-induced magnetism in undoped and Mn-doped wide band gapzinc oxide grown by aerosol spray pyrolysis D.E. Motaunga,∗, I. Kortidise, D. Papadakie, S.S. Nkosib,∗∗, G.H. Mhlongoa,J. Wesley-Smitha, G.F. Malgasc, B....W. Mwakikungaa, E. Coetseed, H.C. Swartd,G. Kiriakidise,f, S.S. Raya aDST/CSIR Nanotechnology Innovation Centre, National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395,Pretoria 0001, South Africa b...

Superionic Conductivity of Sm3+, Pr3+, and Nd3+ Triple-Doped Ceria through Bulk and Surface Two-Step Doping Approach.

Science.gov (United States)

Liu, Yanyan; Fan, Liangdong; Cai, Yixiao; Zhang, Wei; Wang, Baoyuan; Zhu, Bin

2017-07-19

Sufficiently high oxygen ion conductivity of electrolyte is critical for good performance of low-temperature solid oxide fuel cells (LT-SOFCs). Notably, material conductivity, reliability, and manufacturing cost are the major barriers hindering LT-SOFC commercialization. Generally, surface properties control the physical and chemical functionalities of materials. Hereby, we report a Sm 3+ , Pr 3+ , and Nd 3+ triple-doped ceria, exhibiting the highest ionic conductivity among reported doped-ceria oxides, 0.125 S cm -1 at 600 °C. It was designed using a two-step wet-chemical coprecipitation method to realize a desired doping for Sm 3+ at the bulk and Pr 3+ /Nd 3+ at surface domains (abbreviated as PNSDC). The redox couple Pr 3+ /Pr 4+ contributes to the extraordinary ionic conductivity. Moreover, the mechanism for ionic conductivity enhancement is demonstrated. The above findings reveal that a joint bulk and surface doping methodology for ceria is a feasible approach to develop new oxide-ion conductors with high impacts on advanced LT-SOFCs.

Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

International Nuclear Information System (INIS)

Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

2010-01-01

Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

Carbon doped lanthanum aluminate (LaAlO{sub 3}:C) UV thermoluminescent properties synthesized by solid state reaction with three different mixing methodologies

Energy Technology Data Exchange (ETDEWEB)

Alves, N., E-mail: neire.radiologia@yahoo.com.br, E-mail: farialo@cdtn.br [Universidade Federal do Estado de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Departamento de Engenharia Nuclear; Ferraz, W.B.; Faria, L.O., E-mail: ferrazw@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2017-07-01

In this work we discuss the thermoluminescent (TL) response for LaAlO{sub 3}:C crystals grown by using three different combinations of Al{sub 2}O{sub 3}, La{sub 2}O{sub 3} and carbon atoms during the synthesis process. Recently, LaAlO{sub 3} single crystals, co-doped with Ce{sup 3+} and Dy{sup 3+} rare earth trivalent ions and grown under hydrothermal conditions, have been reported to show high thermoluminescent response (TL) when exposed to low levels of ultraviolet radiation (UVR). However, undoped LaAlO{sub 3} synthesized by solid state reaction method from the 1:1 mixture of aluminum and lanthanum oxide under reducing atmosphere revealed to have still higher thermoluminescent sensitivity to UV photon fields than the co-doped with Ce{sup 3+} and Dy{sup 3+}. It is well known that carbon doped aluminum oxide monocrystals have excellent TL and photoluminescent response properties for X-rays, UV and gamma radiation fields. Thus, we conducted three different syntheses of LaAlO{sub 3} by the solid state reaction method, doping the mixture with carbon. The lanthanum aluminate polycrystals were synthesized from the 1:1 mixture of aluminum and lanthanum oxide, adding 0.1wt.% carbon and annealed at 1700°C for two hours in hydrogen atmosphere. The X-ray diffraction analysis revealed the formation of rhombohedral LaAlO{sub 3} crystallographic phase, however a small percentage (15%) of Al{sub 2}O{sub 3} has been also identified. The UV-Vis absorbance spectra were obtained and F and F{sup +}- center were ascribed. The UV irradiations were carried out using a commercial 8W UV lamp. Thermoluminescence measurements were performed at a Harshaw 4500 TL reader. All compositions investigated have shown high TL sensitivity to UVR. (author)

Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

2010-01-01

GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

Refractive Indices in Undoped and MgO-Doped Near-Stoichiometric LiTaO3 Crystals

Science.gov (United States)

Nakamura, Masaru; Higuchi, Shinji; Takekawa, Shunji; Terabe, Kazuya; Furukawa, Yasunori; Kitamura, Kenji

2002-04-01

Undoped and MgO (0.5 and 1.0-mol%)-doped near-stoichiometric LiTaO3 (SLT) crystals were grown from off-congruent Li-rich solutions (Li˜ 60 mol%) by the double-crucible Czochralski method using a continuous SLT ceramic grain charging system. Curie temperatures of the undoped and MgO (0.5 and 1.0-mol%)-doped SLT crystals are 688, 694 and 695°C, respectively. The ordinary and extraordinary refractive indices (no, ne) of these crystals were measured by the prism coupling technique in the wavelength range from 0.440 to 1.050 μm at room temperature, and the temperature-independent Sellmeier equations for each crystal were derived from the measured refractive index data. no of the SLT crystal was almost the same as that of a congruent-melt LiTaO3 (CLT) crystal, while ne of the SLT crystal was lower than that of the CLT crystal. ne was lower than no for the SLT crystal, similar to as in the case of the LiNbO3 crystal. The refractive indices of the SLT crystal, no and ne, were found to be almost independent of MgO concentration at the doping level of 0.5 and 1.0 mol%.

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si2H6 and NH3

Science.gov (United States)

Scheid, Emmanuel; Boyer, Pierre; Samitier, Josep; Hassani, Ahmed

1994-03-01

Si2H6/NH3 gas mixture was employed to obtain, by low-pressure chemical vapor deposition (LPCVD) at low temperature, nitrogen-doped silicon (NIDOS) films with various N/Si ratios. Thermal oxide was grown in dry oxygen at 900°C and 1100°C on NIDOS films. The result indicates that the nitrogen content of NIDOS films, assessed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), greatly influences their oxidation rate.

Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

International Nuclear Information System (INIS)

Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

2010-01-01

The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

Growth and characterization of KDP crystals doped with L-aspartic acid.

Science.gov (United States)

Krishnamurthy, R; Rajasekaran, R; Samuel, Bincy Susan

2013-03-01

Potassium Dihydrogen Phosphate (KDP) doped with L-aspartic acid has been grown by solvent slow evaporation technique from a mixture of aqueous solution of KDP and 0.7% of L-aspartic acid at room temperature. The grown crystals were characterized by powder X-ray diffraction, UV-visible, FTIR analysis. The doping of aspartic acid was confirmed by FTIR spectrum. The Nonlinear optical property (SHG) of L-aspartic acid doped KDP has been confirmed. Microhardness studies were carried out on the grown crystal. Copyright © 2012 Elsevier B.V. All rights reserved.

Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

2013-01-01

0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Science.gov (United States)

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

International Nuclear Information System (INIS)

Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

2015-01-01

Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

Structural and optical properties of ZnO films grown on silicon and ...

Indian Academy of Sciences (India)

TECS

Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

Crystal growth and scintillation properties of Er-doped Lu{sub 3}Al{sub 5}O{sub 12} single crystals

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, Makoto, E-mail: makoto.sugiyama@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Totsuka, Daisuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-02-01

Er-doped Lu{sub 3}Al{sub 5}O{sub 12} (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under {sup 241}Am {alpha}-ray excitation indicated host emission at approximately 350 nm and Er{sup 3+} 4f-4f emissions. According to the pulse height spectra recorded under {gamma}-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The {gamma}-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 {mu}s and 6-10 {mu}s).

Improvement in the properties of Ag-doped YBa2Cu3O7-x grain boundary Josephson junctions

International Nuclear Information System (INIS)

Bolanos, G.; Baca, E.; Osorio, J.; Prieto, P.

2000-01-01

Ag-doped YBa 2 Cu 3 O 7-x (YBCO) thin films using 5 to 20 wt% Ag-doped YBCO targets have been grown by a DC sputtering technique on SrTiO 3 bicrystals. Critical currents of 4 to 5 x 10 6 A/cm 2 at 77 K were measured in YBCO films doped with 5 wt% Ag which has been found to be higher than the value of 1 x 10 6 A/cm 2 measured in undoped samples. The normal resistivity decreases by a doping of 5 wt% Ag and increases for higher Ag concentrations. The critical temperature, T c , of the Ag-YBCO films remained unchanged at 92 K as in the undoped YBCO samples. An I c R n product of 170 μV at 77 K was found in grain boundary Josephson junctions (GBJJs) with 5 wt% Ag, compared with the value of 100 μV measured in undoped samples at the same temperature. Current-voltage characteristics were measured in GBJJs, showing Shapiro steps under microwave radiation and Fraunhofer patterns with an external magnetic field. The improvement in the normal and superconducting properties of Ag-doped YBCO films has been interpreted using the De Genes model to establish that YBCO containing metallic Ag addition shows a superconductor-normal metal-superconductor (S-N-S) behavior, thereby the Ag-doping enhances the weak link behavior and is, therefore, appropriate for electronic applications. (orig.)

Thermal analyzes of phosphate glasses doped with Yb{sup 3+} and ZnTe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Freitas, A.M.; Bell, M.J.V. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Anjos, V., E-mail: virgilio@fisica.ufjf.br [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Pinheiro, A.S.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física da Universidade Federal de Uberlândia, CP 593, CEP 38400-902 Uberlândia, MG (Brazil)

2016-01-15

This work studies the thermal properties of a glass matrix called PZABP doped with ZnTe and co-doped with Yb{sup 3+} with nominal composition 60P{sub 2}O{sub 5}, 15ZnO, 5Al{sub 2}O{sub 3}, 10BaO, and 10 PbO (mol%). The presence of ZnTe results in the formation of nanocrystals which are evidenced by optical absorption, X-Ray Diffraction (XRD) and Raman scattering. Thermal lens and Volumetric Heat Capacity techniques were used to investigate thermal diffusivity (D), thermal conductivity (K) and optical path variation with temperature (ds/dT). The outcomes indicate high values for the thermal diffusivity and a relatively small thermal conductivity, i.e., around 2.6×10{sup −3} cm{sup 2}/s and 3.4×10{sup −3} W cm{sup −1} K{sup −1}, respectively. On the other hand, a low ds/dT value, 1.0×10{sup −6} K{sup −1}, was obtained as required for an active laser medium. Moreover, it has been observed that the matrix allows high concentration of dopants without compromising its thermal properties. As a result, PZABP glasses may be pointed out as a promising material to applications in high power photonics devices. - Highlights: • UV transparentglass matrix (PZABP) is used for Yb{sup 3+}doping. • Bulk like and quantum dots like crystals of ZnTe were grown. • Thermal properties point out PZABP as a material to high power photonics devices.

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

RBS characterization of Al2O3 films doped with Ce and Mn

International Nuclear Information System (INIS)

Martinez-Martinez, R.; Rickards, J.; Garcia-Hipolito, M.; Trejo-Luna, R.; Martinez-Sanchez, E.; Alvarez-Fregoso, O.; Ramos-Brito, F.; Falcony, C.

2005-01-01

Rutherford backscattering (RBS) with 4 He energies from 2 to 6 MeV has been used to study the properties of thin amorphous photoluminescent Al 2 O 3 :Ce,Mn films grown by spray pyrolysis on Corning 7059 glass substrates. The source solutions were AlCl 3 , CeCl 3 and MnCl 2 dissolved in deionized water. Different molar concentrations (Ce 10%; Mn 1%, 3%, 5%, 7% and 10%) were investigated under the same deposition conditions at a substrate temperature of 300 deg. C. The RBS spectra show a homogeneous depth profile of both Ce and Mn within the films, and the measured quantities are consistent with the original solution concentrations. An important amount of Cl, which plays a significant role in luminescent properties, was detected, in both the doped and undoped samples

Ferroelectric and dielectric properties of BaTi0.9Zr0.1O3 doped with Li0.5Fe2.5O4 ceramics

Science.gov (United States)

Gajula, Ganapathi Rao; Buddiga, Lakshmi Rekha; Chidambara Kumar, K. N.; Ch, Arun Kumar; Samatha, K.; Kokkiragadda, Sreeramachandra Murthy; Dasari, Madhava Prasad

2018-06-01

We have prepared a composite BaTi0.9Zr0.1O3 (BTZr) doped with Li0.5Fe2.5O4 (LF) having chemical formulae (1- x) BTZr + (x) LF (x=0, 0.05, 0.1 and 0.15) conventional solid state reaction technique. We have sintered the grown composites at 1150 °C for 3 h. We have characterized the grown composites using XRD, FESEM, P-E loop tracer and LCR meter. The XRD measurements reveal the tetragonal nature of the composites. The morphological studies reveal that the composite exhibits dense microstructure with small pores. The P-E loops confirm that the composites exhibit remnant polarization and the coercive field increases with increasing concentration of Lithium Ferrite (LF). We have studied dielectric property of the composites by varying the temperature of the sample from 30 °C to 500 °C at 1 kHz, 10 kHz and also by varying the frequency from 1 Hz to 10 MHz at 30 °C. The dielectric property of BTZr has increased after doping LF in BTZr which reveals the enhancement of electrical properties of the grown composite.

Nonlinear optical properties of TeO2-P2 O5- ZnO-LiNbO3 glass doped with Er3+ ions

Science.gov (United States)

Miedzinski, R.; Fuks-Janczarek, I.; El Sayed Said, Y.

2016-10-01

A series of lithium niobate LiNbO3 (LN) single crystals doped with Er3+ were grown under the same conditions by melt-quenching method. The distribution coefficients of rare-earth (RE) elements in the "crystal-melt" system of LN were determined at the beginning of the crystal growth. Their dependence on the dopant concentration in melt for 0.4 and 0.8 wt % was investigated. The procedure is applied to RE-doped lithium niobate (LiNbO3), a material of great interest for optoelectronic applications. We have obtained the real χR(3) and imaginary parts χI(3) of the third-order, nonlinear optical susceptibility to the nonlinear refractive index n2 and the nonlinear absorption coefficient β that are valid for absorbing systems. We show that nonlinear refractive or absorptive effects are the consequence of the interplay between the real and imaginary parts of the third-order susceptibilities of the materials. The method for measuring non-linear absorption coefficients and nonlinear refractive index based on well-known Z-scan is presented.

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

3D structured Mo-doped Ni3S2 nanosheets as efficient dual-electrocatalyst for overall water splitting

Science.gov (United States)

Wu, Chengrong; Liu, Bitao; Wang, Jun; Su, Yongyao; Yan, Hengqing; Ng, Chuntan; Li, Cheng; Wei, Jumeng

2018-05-01

Searching for a cost-effective, high efficient and stable bifunctional electrocatalyst for overall water-splitting is critical to renewable energy systems. In this study, three-dimensional (3D) curved nanosheets of Mo-doped Ni3S2 grown on nickel foam were successfully synthesized via a one-step hydrothermal process. The hydrogen-evolution reaction (HER) and the oxygen-evolution reaction (OER) in alkaline environment of this 3D catalyst are investigated in detail. The results show that it possesses lower overpotential, high current densities and small Tafel slopes both in OER and HER. For HER, the catalysts show excellent electrochemical performance, demonstrating a low over-potential of 212 mV at 10 mA cm-2 with a large decrease of 127 mV compared to the undoped Ni3S2. And it also shows a lower overpotential of 260 mV at 10 mA cm-2 which decreases 30 mV for OER. In addition, it is only need 1.67 V for the overall water splitting at 10 mA cm-2 which is 70 mV. It found that the Mo element would change the morphology of Ni3S2 and induce much more active sites for HER and OER. The as-prepared Mo-doped Ni3S2 bi-functional electrocatalyst could act as the promising electrode materials for water splitting.

Cathodoluminescence study of ytterbium doped GaSb

International Nuclear Information System (INIS)

Hidalgo, P.; Mendez, B.; Ruiz, C.; Bermudez, V.; Piqueras, J.; Dieguez, E.

2005-01-01

Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb 3+ ions has been detected

Effect of shallow donors on Curie–Weiss temperature of Co-doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Guo, Shuxia, E-mail: gsx0391@sina.com [Department of Physics, Jiaozuo Teachers College, Jiaozuo 454001 (China); Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004 (China); Li, Jiwu [Department of Physics, Jiaozuo Teachers College, Jiaozuo 454001 (China); Du, Zuliang [Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004 (China)

2014-12-15

Co-doped ZnO and Al, Co co-doped ZnO polycrystalline powders were synthesized by co-precipitation method. The magnetization curves measured at 2 K show no hysteresis neither remanence for all samples. ZnO:Co grown at low temperature has a positive Curie–Weiss temperature Θ, and ZnO:Co grown at high temperature has a negative Θ. But Al-doped ZnO:Co grown at high temperature has a positive Θ. Positive Curie–Weiss temperature Θ was considered to have relation to the presence of shallow donors in the samples. - Highlights: • Co-doped ZnO and Al, Co co-doped ZnO polycrystalline powders were synthesized. • No hysteresis is observed for all samples. • The Curie–Weiss temperature Θ changes its sign by Al doping. • Positive Θ should be related to shallow donors.

Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Siah, S. C., E-mail: sincheng@alum.mit.edu; Brandt, R. E.; Jaramillo, R.; Buonassisi, T., E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lim, K. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Schelhas, L. T.; Toney, M. F. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Heinemann, M. D. [PVcomB, Helmholtz-Zentrum Berlin, 12489 Berlin (Germany); Chua, D.; Gordon, R. G. [Department of Chemistry Materials Science and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Wright, J.; Segre, C. U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-12-21

Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

Science.gov (United States)

Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

2018-04-01

Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

Energy Technology Data Exchange (ETDEWEB)

Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

2016-02-29

The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

Nonlinear optical and microscopic analysis of Cu2+ doped zinc thiourea chloride (ZTC) monocrystal

Science.gov (United States)

Ramteke, S. P.; Anis, Mohd; Pandian, M. S.; Kalainathan, S.; Baig, M. I.; Ramasamy, P.; Muley, G. G.

2018-02-01

Organometallic crystals offer considerable nonlinear response therefore, present article focuses on bulk growth and investigation of Cu2+ ion doped zinc thiourea chloride (ZTC) crystal to explore its technological impetus for laser assisted nonlinear optical (NLO) device applications. The Cu2+ ion doped ZTC bulk single crystal of dimension 03 × 2.4 × 0.4 cm3 has been grown from pH controlled aqueous solution by employing slow solvent evaporation technique. The structural analysis has been performed by means of single crystal X-ray diffraction technique. The doping of Cu2+ ion in ZTC crystal matrix has been confirmed by means of energy dispersive spectroscopic (EDS) technique. The origin of nonlinear optical properties in Cu2+ ion doped ZTC crystal has been studied by employing the Kurtz-Perry test and Z-scan analysis. The remarkable enhancement in second harmonic generation (SHG) efficiency of Cu2+ ion doped ZTC crystal with reference to ZTC crystal has been determined. The He-Ne laser assisted Z-scan analysis has been performed to determine the third order nonlinear optical (TONLO) nature of grown crystal. The TONLO parameters such as susceptibility, absorption coefficient, refractive index and figure of merit of Cu-ZTC crystal have been evaluated using the Z-scan transmittance data. The laser damage threshold of grown crystal to high intensity of Nd:YAG laser is found to be 706.2 MW/cm2. The hardness number, work hardening index, yield strength and elastic stiffness coefficient of grown crystal has been investigated under microhardness study. The etching study has been carried out to determine the growth likelihood, nature of etch pits and surface quality of grown crystal.

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Science.gov (United States)

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

2015-01-01

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

Improving the Characteristics of Sn-doped In{sub 2}O{sub 2} Grown at Room Temperature with Oxygen Radical-Assisted Electron Beam Deposition

Energy Technology Data Exchange (ETDEWEB)

Oh, Min-Suk [Korea Institute of Industrial Technology, Gwangju (Korea, Republic of); Seo, Inseok [Chonbuk National University, Jeonju (Korea, Republic of)

2017-07-15

Sn-doped In{sub 2}O{sub 3} (Indium tin oxide, ITO) is widely utilized in numerous industrial applications due to its high electrical conductivity and high optical transmittance in the visible region. High quality ITO thin-films have been grown at room temperature by oxygen radical assisted e-beam evaporation without any post annealing or plasma treatment. The introduction of oxygen radicals during e-beam growth greatly improved the surface morphology and structural properties of the ITO films. The obtained ITO film exhibits higher carrier mobility of 43.2 cm{sup 2}/V·s and larger optical transmittance of 84.6%, resulting in a higher figure of merit of ∼ 2.8 × 10{sup −2} Ω{sup −1}, which are quite comparable to the ITO film deposited by conventional e-beam evaporation. These results show that ITO films grown by oxygen radical assisted e-beam evaporation at room temperature with high optical transmittance and high electron conductivity have a great potential for organic optoelectronic devices.

Synthesis of Antimony Doped Amorphous Carbon Films

Science.gov (United States)

Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

2013-06-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Synthesis of Antimony Doped Amorphous Carbon Films

International Nuclear Information System (INIS)

Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

2013-01-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Novel UV-emitting single crystalline film phosphors grown by LPE method

International Nuclear Information System (INIS)

Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J.A.; Winnacker, A.

2010-01-01

This work reports the development of new types of UV-emitting phosphors based on single crystalline films (SCF) of aluminum garnet and perovskite compounds grown by the liquid phase epitaxy method. We consider peculiarities of the growth and the luminescent and scintillation properties of the following four types of UV SCF phosphors: i) Ce-doped SCF of Y-Lu-Al-perovskites with the Ce 3+ emission in the 300-450 nm range of the decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets and perovskites with the Pr 3+ emission in the 300-400 nm and 235-330 nm ranges with the decay time of 13-19 and 7-8 ns, respectively; iii) La 3+ or Sc 3+ doped SCF of Y-Lu-Al-garnets, emitting in the 280-400 nm range due to formation of the La Y,Lu , Sc Y,Lu and Sc Al centers with decay time of the order of several hundreds of nanoseconds; iv) Bi 3+ doped SCF of garnets with Bi 3+ emission in 275-350 nm with decay time of about 1.9 μs.

Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMn xN

International Nuclear Information System (INIS)

Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qing; Summers, Christopher J.; Zhang, Z. John; Dietz, Nikolaus; Ferguson, Ian T.

2006-01-01

Recent theoretical work for Ga 1-x Mn x N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga 1-x Mn x N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga 1-x Mn x N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga 1-x Mn x N of varying thickness and manganese doping levels using Cp 2 Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 μ B /Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn 2+/3+ acceptor level in Ga 1-x Mn x N in order to achieve strong ferromagnetism

Sm 3+-doped polymer optical waveguide amplifiers

Science.gov (United States)

Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

2010-04-01

Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

Photovoltaic properties of Cu-doped CH3NH3PbI3 with perovskite structure

Science.gov (United States)

Shirahata, Yasuhiro; Oku, Takeo

2017-01-01

Photovoltaic properties of copper (Cu)-doped perovskite (CH3NH3PbCuxI3+x) photovoltaic devices with different Cu content were investigated. The CH3NH3PbCuxI3+x films were polycrystalline with a tetragonal system, and their lattice constants and crystallite size varied with Cu doping. Compared to conversion efficiencies of non-doped CH3NH3PbI3 photovoltaic device, those of CH3NH3PbCuxI3+x photovoltaic devises increased. The improvement of photovoltaic properties was attributed to partial substitution of Cu at the Pb sites.

Scintillation properties of transparent Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) ceramics doped with different concentrations of Pr{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki; Fukabori, Akihiro; Fujimoto, Yutaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira Aoba-ku, 980-8577 Sendai (Japan); Ikesue, Akio [World Labo, Co. Ltd., Mutsuno 2-4-1, Atsuta, 456-0023 Nagoya (Japan); Kataoka, Jun [School of Advanced Science and Engineering,Waseda University, Ohkubo 3-4-1, Shinjuku, 169-0072 Tokyo (Japan)

2011-01-15

Transparent ceramics of Pr-doped (0.2 mol%, 0.6 mol%, 1 mol%, and 2 mol%) Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) scintillators produced by the sintering method are discussed. These materials were cut to the specimens with physical dimensions of 5 x 5 x 2 mm{sup 3}. Similar size specimens were also prepared from Czochralski grown Pr:LuAG single crystals to compare scintillation properties. Their transmittance and radio luminescence spectra were evaluated. All specimens were highly transparent in wavelength range above 300 nm, and intense Pr{sup 3+} 5d-4f emission was detected around 310 and 370 nm under excitation with X-ray. Under {sup 137}Cs {gamma}-ray is irradiation, 2 keV photo-absorption peaks were also clearly observed in each sample. The Pr 0.6 mol% doped LuAG ceramics demonstrated highest light yield achievable among the ceramics, and it was half of that observed in the single crystals. Under pulse X-ray excitation, the decay time constants became faster when Pr concentration increased, and. the fastest decay ({proportional_to}5.7 ns time constant) was noticed in the 2 mol% doped ceramic. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

International Nuclear Information System (INIS)

Yamazaki, T.; Minakata, H.; Ito, T.

1990-01-01

The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

Optical, thermal and magnetic studies of pure and cobalt chloride doped L-alanine cadmium chloride

Energy Technology Data Exchange (ETDEWEB)

Benila, B.S., E-mail: benjane.benila@gmail.com [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India); Bright, K.C. [Department of Physics, St. John' s College, Anchal, Kollam 691 306 (India); Delphine, S. Mary [Department of Physics, Holy Cross College (Autonomous), Nagercoil 629 004 (India); Shabu, R. [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India)

2017-03-15

Single crystals of L-alanine cadmium chloride (LACC) and cobalt chloride (Co{sup 2+}) doped LACC have been grown by the slow evaporation solution growth technique. The grown crystals were subjected to various characterizations such as powder XRD, SXRD, FTIR, UV–vis, EDAX, TG/DTA, VSM, Dielectric and Second Harmonic Generation (SHG) measurements. The lattice parameters of the grown crystals were determined by single crystal X-ray analysis. EDAX analysis confirms the presence of Co{sup 2+} ion in the host material. The functional group and optical behavior of the crystals were identified from FTIR and UV-vis spectrum analysis. Electrical parameters such as dielectric constant, dielectric loss have been studied. The thermal stability of the compound was found out using TGA/DTA analysis. Second Harmonic Generation of the samples was confirmed by Kurtz-Perry powder technique. Magnetic properties of the crystals studied by VSM were also reported. The encouraging results show that the cobalt chloride doped LACC crystals have greater potential applications in optical devices. - Graphical abstract: Fig (a) and (b) shows the transparent, stable single crystals of pure and doped crystals were obtained using slow evaporation technique. The sizes of pure and doped crystals are 20×9×2 mm{sup 3} and 18×15×1 mm{sup 3} respectively. Fig (c) is the Hysteresis loop traced at room temperature for the pure and doped crystals explains the soft ferromagnetic nature of the doped crystal. The provision for changing the value of coercivity can be used for security, switching and sensing applications. - Highlights: • Defect free crystals of pure and Co{sup 2+} ion doped L-alanine cadmium chloride were grown. • The optical, dielectric and magnetic properties of pure crystals were enhanced by adding Co{sup 2+} ion. • High optical transmittance was obtained in the entire visible and IR region. • Addition of dopant to the pure crystal altered the coercivity. • Low dielectric

Thermoelectric properties of doped BaHfO_3

International Nuclear Information System (INIS)

Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

2016-01-01

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

Energy Technology Data Exchange (ETDEWEB)

Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

2005-08-01

Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

Science.gov (United States)

Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

2005-10-01

Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

The effect of Bi3+ and Li+ co-doping on the luminescence characteristics of Eu3+-doped aluminum oxide films

International Nuclear Information System (INIS)

Padilla-Rosales, I.; Martinez-Martinez, R.; Cabañas, G.; Falcony, C.

2015-01-01

The incorporation of Bi 3+ and Li + as co-dopants in Eu 3+ -doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi 3+ and Li + do not introduce new luminescence features but affect the luminescence intensity of the Eu 3+ related emission spectra as well as the excitation spectra. The introduction of Bi 3+ generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li + and Bi 3+ co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al 2 O 3 host. • Li was incorporated as a co-activator

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films

Science.gov (United States)

Prozheeva, V.; Hölldobler, R.; von Wenckstern, H.; Grundmann, M.; Tuomisto, F.

2018-03-01

Various nominally undoped and Si-doped (InxGa1-x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

Science.gov (United States)

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

2016-05-01

Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

Photo- and radio-excited luminescence properties of Eu-doped La2O3–Al2O3 based eutectics

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Kamada, Kei; Yanagida, Takayuki; Wakahara, Shingo; Suzuki, Shotaro; Kurosawa, Shunsuke; Yoshikawa, Akira

2013-01-01

Eutectic crystal of 0.5% Eu-doped 30LaAlO 3 –70Al 2 O 3 (vol %) was prepared by micro-pulling down (μ-PD) technique under nitrogen atmosphere. Being excited at a wavelength of 320 nm, the crystal exhibited intense emission band with a maximum at 450 nm which is corresponding to 4f 6 5d-4f 7 ( 8 S 7/2 ) transitions of Eu 2+ . The decay time and fluorescence quantum efficiency (QE) were determined to be about 475 ns and 60%, respectively. When alpha-ray excited the crystal, both Eu 2+ 4f 6 5d-4f 7 ( 8 S 7/2 ) and Eu 3+ 4f 6 -4f 6 ( 5 D 0 - 7 F 1,2 ) emission peaks were observed at 435 nm and 600 nm. By the pulse height spectra, the relative scintillation light yield of the crystal was about 4% compared with that of BGO commercial scintillator. -- Highlights: •0.5% Eu-doped 30LaAlO 3 –70Al 2 O 3 eutectic crystal was grown by μ-PD technique. •The crystal showed intense Eu 2+ 5d-4f emission at 450 nm under excited at 320 nm. •The fluorescence quantum efficiency was calculated to be about 60%. •The scintillation light yield was about 4% compared with that of BGO scintillator

Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

Er3+-Al2O3 nanoparticles doping of borosilicate glass

International Nuclear Information System (INIS)

Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

2015-01-01

Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

International Nuclear Information System (INIS)

Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

2017-01-01

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

Science.gov (United States)

Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

2018-04-01

We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Lorenzo Rigutti

2009-01-01

Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

Science.gov (United States)

Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

2011-07-04

Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

Structure and optical band gaps of (Ba,Sr)SnO{sub 3} films grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-09-15

Epitaxial growth of (Ba{sub x}Sr{sub 1−x})SnO{sub 3} films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO{sub 3} films can be grown coherently strained on closely lattice and symmetry matched PrScO{sub 3} substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO{sub 3} films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Luminescent properties of Ln3+ doped tellurite glasses containing AlF3

Science.gov (United States)

Walas, Michalina; Pastwa, Agata; Lewandowski, Tomasz; Synak, Anna; Gryczyński, Ignacy; Sadowski, Wojciech; Kościelska, Barbara

2016-09-01

The low-phonon energy tellurite glasses TeO2-BaO-Bi2O3 and TeO2-BaO-Bi2O3-AlF3 triply doped with Eu3+, Tb3+, Tm3+ ions in two different molar ratios were synthesized using melt-quenching technique. Their structure and luminescence properties were widely investigated by X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence Spectroscopy (PL). The luminescence spectra of Eu3+, Tb3+, Tm3+ co-doped glasses show apart of the bands corresponding to the 4f-4f transitions of lanthanide ions also band corresponding to glass matrix. AlF3 doping increases emission intensity, although to improve overall emission color further studies on molar composition of samples and the molar ratio of the components should be carried out.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Science.gov (United States)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

Science.gov (United States)

Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

2018-02-01

We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

Structure and properties of the Mn doped CeO{sub 2} thin film grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique

Energy Technology Data Exchange (ETDEWEB)

Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qaseem University, Physics Department, Qaseem (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Hafez, M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2015-08-15

Highlights: • Mn doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via sol–gel technique. • The concentration of the Mn ions was varied from 1 to 13 at.%. • The incorporation of 7 at.% of Mn ions was found to provide formation of exceptionally smooth films. • This amount demonstrated the highest saturation magnetization of 1.75 μ{sub B}/Mn and coercive field of 487 Gauss. - Abstract: Here we report Mn doped cerium oxide films prepared on the LaAlO{sub 3} (0 0 1) substrate via an ethylene glycol modified sol–gel spin coating technique and evaluation of their properties as diluted magnetic semiconductors. Cerium oxide was selected because of its high dielectric constant and fluorite cubic structure, matching the silicon and lanthanum aluminate based electronic devices. The concentration of the Mn ions was varied from 1 to 13 at.% and the influence of this concentration on the structure, surface morphology, optical and magnetic properties of these films was studied using scanning electron microscopy, energy dispersive spectroscopy, atomic force microscopy, ellipsometric spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and magnetic measurements. The incorporation of 7 at.% of Mn ions was found to provide formation of exceptionally smooth films, demonstrating the highest saturation magnetization of 1.75 μ{sub B}/Mn and the coercive field of 487 Gauss. These properties are assigned to the conversion of Ce{sup 4+} to Ce{sup 3+} upon incorporation of Mn ions into the CeO{sub 2} structure and the oxidation of Mn{sup 2+} to Mn{sup 4+}, creating two oxygen vacancies to preserve the cubic structure of cerium oxide and promoting ferromagnetism.

An investigation on photoluminescence and energy transfer of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors

Energy Technology Data Exchange (ETDEWEB)

Bandi, Vengala Rao; Grandhe, Bhaskar Kumar [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan (Korea, Republic of)

2013-07-15

The present investigation aims to demonstrate the potentiality of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors, which were prepared by a sol–gel method. The X-ray diffraction (XRD) profiles showed that all the observed peaks could be attributed to the monoclinic phase of Ca{sub 4}YO(BO{sub 3}){sub 3}. From the measured emission profiles, we have noticed that both the single-doped Eu{sup 3+}/Sm{sup 3+} phosphors shows four emission transitions of {sup 5}D{sub 0} → {sup 7}F{sub 0,1,2,3} and {sup 4}G{sub 5/2} → {sup 6}H{sub 5/2,7/2,9/2,11/2} respectively. Among them, the {sup 5}D{sub 0} → {sup 7}F{sub 2} of Eu{sup 3+} and {sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} of Sm{sup 3+} are intense emission transitions, leading to an intense red color emission from the prepared phosphors. The excitation spectra showed that Eu{sup 3+}/Sm{sup 3+} doped samples can be excited efficiently by 394 nm and 402 nm respectively, incidentally which matches well with the characteristic emission from UVLED. The co-doping of Sm{sup 3+} ions can broaden and strengthen the absorption of near UV region and to be efficient to sensitize the emission of the Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} phosphor. The mechanism involved in the energy transfer between Eu{sup 3+} and Sm{sup 3+} has been explained and elucidated by an energy level diagram. - Highlights: • Eu{sup 3+} or/and Sm{sup 3+}:Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors were prepared by sol–gel method. • The co-doping of Sm{sup 3+} to Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} extends its absorption of NUV region. • It has intense absorption in NUV region, which is suitable for NUV LED. • The energy transfer process between Eu{sup 3+} and Sm{sup 3+} ions were discussed.

Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

2010-06-15

Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

Thermoelectric properties of doped BaHfO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

Science.gov (United States)

Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

2011-05-11

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Habib, Zubida [National Institute of Technology, Department of Chemistry, Srinagar (India); National Institute of Technology, Department of Physics, Srinagar (India); Ikram, Mohd; Mir, Sajad A. [National Institute of Technology, Department of Physics, Srinagar (India); Sultan, Khalid [Central University of Kashmir, Department of Physics, Srinagar (India); Abida [Govt Degree College for Women, Department of Physics, Anantnag, Kashmir (India); Majid, Kowsar [National Institute of Technology, Department of Chemistry, Srinagar (India); Asokan, K. [Inter University Accelerator Centre, New Delhi (India)

2017-06-15

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films grown by pulsed laser deposition on LaAlO{sub 3} substrates. Electronic excitations were induced by 200 MeV Ag{sup 12+} ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe{sub 1-x}Ni{sub x}O{sub 3} (x = 0.1 and 0.3) films compared to HoFeO{sub 3} film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Comparative study of scintillation properties of RE doped NaPO3-Al(PO3)3 glasses

International Nuclear Information System (INIS)

Kuro, Tomoaki; Yanagida, Takayuki; Okada, Go; Fujimoto, Yutaka; Masai, Hirokazu

2015-01-01

We systematically investigated photoluminescence (PL), scintillation and dosimeter properties of rare-earth (RE) doped NaPO 3 -Al(PO 3 ) 3 (NAP) glasses. Ag-doped NAP glass is widely used for individual radiation dosimeter, however, there have been few reports on studies about NAP glasses when RE ions are doped as the luminescence center. The NAP glasses doped with 0.3 wt% RE (La∼Yb) were prepared by the conventional melt-quenching method. PL decay time and scintillation decay time profiles showed fast (ns) and slow (μs or ms) components: the fast components were from several tens to 100 ns due to the host emission or 5d-4f transition emission, and the slow component from few μs to few ms was caused by 4f-4f transition emission of RE 3+ . Thermally stimulated luminescence (TSL) was evaluated as a dosimeter property, and glow peaks appeared around 400degC in all the samples. The TSL dose response function was examined in the dose range from 10 mGy to 10 Gy, and good linearity was observed in RE-doped NAP glasses. (author)

Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

International Nuclear Information System (INIS)

Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

2003-01-01

We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

The effect of intentional potassium co-doping on the luminescent properties of Yb3+ and Tm3+ doped α-NaYF4 core and core–shell nanoparticles

International Nuclear Information System (INIS)

Misiak, Małgorzata; Stręk, Wiesław; Arabasz, Sebastian; Bednarkiewicz, Artur

2016-01-01

Simple and effective ways to circumvent limited luminescence efficiency of up-converting nanoparticles (UCNPs) are sought. One of the methods relays on distorting the crystallographic structure of host material by co-doping the nanocrystals with optically inactive co-dopants. Here we study the influence of K + doping and surface passivation on the up-converting properties of the α-NaYF 4 nanocrystals co-doped with 20% Yb 3+ and 0.1 or 2% Tm 3+ . The intentionally chosen concentrations of K + ions, which were meant to replaced sodium ions were fixed to 0, 5, 10, 20 to 30%. Potassium ions modified the spectroscopic properties of both core and core–shell NPs, but the differences were noticed between samples doped with 0.1% Tm 3+ and 2% Tm 3+ ions. Replacement of sodium by potassium ions decreased up-conversion luminescence intensity as well as shortened thulium excited states lifetimes in the samples doped with 0.1% Tm 3+ , while the opposite behavior was found in the samples co-doped with higher 2% thulium concentration. - Highlights: • We studied the influence of K + doping on luminescent properties of α-NaYF 4 :YbTm. • The 0.1 and 2% Tm doped core and core–shell samples were investigated. • K + -doping influence on UC properties was different in low and highly Tm doped NPs. • The explanations of the observed variations were proposed.

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

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Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Preparation and Luminescent Properties of the antibacterial materials of the La3+ Doped Sm3+-Hydroxyapatite

Science.gov (United States)

Lv, Yuguang; Shi, Qi; Jin, Yuling; Ren, Hengxin; Qin, Yushan; Wang, Bo; Song, Shanshan

2018-03-01

In this paper, the La3+-doped Sm3+ hydroxyapatite (La/Sm/HAP) complexes were prepared by a precipitation method. The sample was defined by IR spectra, fluorescence spectra and X ray diffraction analysis et al. The structure of complexes were discussed. The emission wavelength of heat treatment of Sm3+ do not change, but will affect the intensity of the peak Sm3+ luminescence properties and the occupy hydroxyapatite in the lattice Ca( II )and Ca( I ) loci with Sm3+ doped concentration and the proportion of the sintering temperature change and change: The nano hydroxyapatite complex of the La3+ doped samarium obtain the good fluorescence intensity, by La3+ doping content of Sm3+ were hydroxyapatite 6% (La3+, Sm3+ mole ratio) device. The complex of La3+ doped samarium HAP have Stable chemical property, fluorescence property and excellent biological activity. The ligand HAP absorbs energy or captures an electron-hole pair and then transfers it to the lanthanide ions. The catalytic activity influence of the La3+-doped Sm3+hydroxyapatite was discussed, the La/Sm/HAP had excellent antibacterial property, which used as potential biological antibacterial material.

Energy transfer and colorimetric properties of Eu3+/Dy3+ co-doped Gd2(MoO4)3 phosphors

International Nuclear Information System (INIS)

Wan Jing; Cheng Lihong; Sun Jiashi; Zhong Haiyang; Li Xiangping; Lu Weili; Tian Yue; Lin Hai; Chen Baojiu

2010-01-01

Dy 3+ single-doped and Eu 3+ /Dy 3+ co-doped gadolinium molybdate (Gd 2 (MoO 4 ) 3 ) phosphors were synthesized by a traditional solid-state reaction method. The XRD was used to confirm the crystal structure of the phosphors. The energy transfer between Eu 3+ and Dy 3+ was observed and studied. The Eu 3+ concentration can hardly affect the blue and yellow emission intensities of Dy 3+ , and the Eu 3+ emission intensity increases with the increase of Eu 3+ concentration. Co-doping with Eu 3+ compensated the red emission component of the Dy 3+ doped Gd 2 (MoO 4 ) 3 phosphor. Introducing proper amount of Eu 3+ can improve the colorimetric performance of the phosphors.

Properties of iron-doped multicrystalline silicon grown by the float-zone technique

Energy Technology Data Exchange (ETDEWEB)

Ciszek, T.F.; Wang, T.H.; Ahrenkiel, R.K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coefficients (k {approximately} 10{sup {minus}5} for Fe in Si). Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geomet and the growth parameters. Values in the range of 10{sup 12}-10{sup 16} atoms/cm{sup 3} were targeted. No additional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG-laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing Fe content for similar grain sizes (from {approximately}10 {mu}s to 2 {mu}s for < 10{sup {minus}3} cm{sup 2} grains, from {approximately}30 {mu}s to 2 {mu}s for {approximately}5 x 10{sup {minus}3} cm{sup 2} grains, and from {approximately}300 {mu}s to 2 {mu}s for > 10{sup {minus}2} cm{sup 2} grains) as the Fe content increased to 1 {times} 10{sup 16} atoms/cm{sup 3}.

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

Growth of Yb3+-doped Y2O3 single crystal rods by the micro-pulling-down method

International Nuclear Information System (INIS)

Mun, J.H.; Novoselov, A.; Yoshikawa, A.; Boulon, G.; Fukuda, T.

2005-01-01

The rare-earth sesquioxides (RE 2 O 3 , RE = Lu, Y and Sc) are very promising host crystals for advanced laser diode (LD)-pumped Yb 3+ -doped solid-state lasers due to unusual combination, almost unique of favourable structural, thermal and spectroscopic properties which are described. In spite of these favourable properties, the bulk single crystal growth technology for the rare-earth sesquioxides has not been established yet. The extremely high melting temperature at around 2400 deg. C has prevented it. However, we shall show that yttrium oxide crystals (Yb x Y 1-x ) 2 O 3 , x = 0.0, 0.005, 0.05, 0.08 and 0.15 of cylindrical shape as laser rods with 4.2 mm in diameter and 15-20 mm in length have been grown from rhenium crucibles by the micro-pulling-down method. The crystal quality characterisation of undoped Y 2 O 3 crystal was determined using X-ray rocking curve (XRC) analysis. Yb were homogeneously distributed in Y 2 O 3 host crystal

Synthesis of pure and Sr-doped LaGaO3, LaFeO3 and LaCoO3 and Sr,Mg-doped LaGaO3 for ITSOFC application using different wet chemical routes

International Nuclear Information System (INIS)

Kumar, M.; Srikanth, S.; Ravikumar, B.; Alex, T.C.; Das, S.K.

2009-01-01

Pure and Sr-doped LaGaO 3 , LaFeO 3 and LaCoO 3 and Sr,Mg-doped LaGaO 3 were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere

Sequestration of radionuclides and heavy metals by hydroxyapatite doped with Fe, Cu and Sn

International Nuclear Information System (INIS)

Neidel, Linnah L.; Moore, Robert Charles; Salas, Fred; Grouios, Fotini; Holt, Kathleen Caroline; Helean, Katheryn B.

2005-01-01

Apatite, Ca 5 (PO 4 ) 3 (F,OH,Cl)(P6 3 /m, Z=2), is the most abundant phosphate mineral on Earth. The end-member hydroxyapatite, Ca 5 (PO 4 ) 3 OH(P2 1 /b), is the primary mineral component in bones and teeth and tends to scavenge and sequester heavy metals in the human body. Hydroxyapatite has also been shown to be effective at sequestering radionuclides and heavy metals in certain natural systems (Dybowska et al., 2004). Hydroxyapatite has been the focus of many laboratory studies and is utilized for environmental remediation of contaminated sites (Moore et al., 2002). The crystal structure of apatite tolerates a great deal of distortion caused by extensive chemical substitutions. Metal cations (e.g. REE, actinides, K, Na, Mn, Ni, Cu, Co, Zn, Sr, Ba, Pb, Cd, Fe) substitute for Ca, and oxyanions (e.g. AsO 4 3- , SO 4 2- , CO 3 2- , SiO 4 4- , CrO 4 2- ) replace PO 4 3- through a series of coupled substitutions that preserve electroneutrality. Owing to the ability of apatite to incorporate 'impurities'(including actinides) gives rise to its proposed use as a waste form for radionuclides. Recent work at Sandia National Laboratory demonstrated that hydroxyapatite has a strong affinity for U, Pu, Np, Sr and Tc reduced from pertechnetate (TcO 4 - ) by SnCl 2 (Moore et al., 2002). Based on these earlier promising results, an investigation was initiated into the use of apatite-type materials doped with aliovalent cations including Fe, Cu and Sn as Tc-scavengers. Synthetic Fe and Cu-doped hydroxyapatite samples were prepared by precipitation of Ca, from Ca-acetate, and P, from ammonium phosphate. The Fe and Cu were introduced as chlorides into the Ca-acetate solution. Stannous chloride was used as a reducing agent and was apparently incorporated into the crystal structures of the hydroxyapatite samples in small, as yet undetermined quantities.

Sequestration of Radionuclides and Heavy Metals by Hydroxyapatite Doped with Fe, Cu and Sn

International Nuclear Information System (INIS)

K.B. Helean; R.C. Moore

2005-01-01

Apatite, Ca 5 (PO 4 ) 3 (F,OH,Cl) (P6 3 /m, Z=2), is the most abundant phosphate mineral on Earth. The end-member hydroxyapatite, Ca 5 (PO 4 ) 3 OH (P2 1 /b), is the primary mineral component in bones and teeth and tends to scavenge and sequester heavy metals in the human body. Hydroxyapatite has also been shown to be effective at sequestering radionuclides and heavy metals in certain natural systems (Dybowska et al., 2004). Hydroxyapatite has been the focus of many laboratory studies and is utilized for environmental remediation of contaminated sites (Moore et al., 2002). The crystal structure of apatite tolerates a great deal of distortion caused by extensive chemical substitutions. Metal cations (e.g. REE, actinides, K, Na, Mn, Ni, Cu, Co, Zn, Sr, Ba, Pb, Cd, Fe) substitute for Ca, and oxyanions (e.g. AsO 4 3- , SO 4 2- , CO 3 2- , SiO 4 4- , CrO 4 2- ) replace PO 4 3- through a series of coupled substitutions that preserve electroneutrality. Owing to the ability of apatite to incorporate ''impurities'' (including actinides) gives rise to its proposed use as a waste form for radionuclides. Recent work at Sandia National Laboratory demonstrated that hydroxyapatite has a strong affinity for U, Pu, Np, Sr and Tc reduced from pertechnetate (TcO 4 - ) by SnCl 2 (Moore et al., 2002). Based on these earlier promising results, an investigation was initiated into the use of apatite-type materials doped with aliovalent cations including Fe, Cu and Sn as Tc-scavengers. Synthetic Fe and Cu-doped hydroxyapatite samples were prepared by precipitation of Ca, from Ca-acetate, and P, from ammonium phosphate. The Fe and Cu were introduced as chlorides into the Ca-acetate solution. Stannous chloride was used as a reducing agent and was apparently incorporated into the crystal structures of the hydroxyapatite samples in small, as yet undetermined quantities

An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics

Science.gov (United States)

Park, Jun-Hyuk; Ahn, Kyung-Jun; Park, Kang-Il; Na, Seok-In; Kim, Han-Ki

2010-03-01

We report the characteristics of Al-doped zinc oxide (AZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system for use as a transparent conducting electrode in cost-efficient bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical type cathode with an AZO target, whose usage was above 80%, we were able to obtain a low cost and indium free AZO electrode with a low sheet resistance of ~4.59 Ω/sq, a high transparency of 85% in the visible wavelength region and a work function of 4.9 eV at a substrate temperature of 230 °C. Moreover, the neutral poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) based OSC fabricated on the CRMS-grown AZO electrode at 230 °C showed an open circuit voltage of 0.5 V, a short circuit current of 8.94 mA cm-2, a fill factor of 45% and power conversion efficiency of 2.01%, indicating that CRMS is a promising cost-efficient AZO deposition technique for low cost OSCs.

Structural and Electrochemical Characterization of Zn1-xFexO-Effect of Aliovalent Doping on the Li⁺ Storage Mechanism.

Science.gov (United States)

Giuli, Gabriele; Eisenmann, Tobias; Bresser, Dominic; Trapananti, Angela; Asenbauer, Jakob; Mueller, Franziska; Passerini, Stefano

2017-12-29

In order to further improve the energy and power density of state-of-the-art lithium-ion batteries (LIBs), new cell chemistries and, therefore, new active materials with alternative storage mechanisms are needed. Herein, we report on the structural and electrochemical characterization of Fe-doped ZnO samples with varying dopant concentrations, potentially serving as anode for LIBs (Rechargeable lithium-ion batteries). The wurtzite structure of the Zn 1-x Fe x O samples (with x ranging from 0 to 0.12) has been refined via the Rietveld method. Cell parameters change only slightly with the Fe content, whereas the crystallinity is strongly affected, presumably due to the presence of defects induced by the Fe 3+ substitution for Zn 2+ . XANES (X-ray absorption near edge structure) data recorded ex situ for Zn 0.9 Fe 0.1 O electrodes at different states of charge indicated that Fe, dominantly trivalent in the pristine anode, partially reduces to Fe 2+ upon discharge. This finding was supported by a detailed galvanostatic and potentiodynamic investigation of Zn 1-x Fe x O-based electrodes, confirming such an initial reduction of Fe 3+ to Fe 2+ at potentials higher than 1.2 V (vs. Li⁺/Li) upon the initial lithiation, i.e., discharge. Both structural and electrochemical data strongly suggest the presence of cationic vacancies at the tetrahedral sites, induced by the presence of Fe 3+ (i.e., one cationic vacancy for every two Fe 3+ present in the sample), allowing for the initial Li⁺ insertion into the ZnO lattice prior to the subsequent conversion and alloying reaction.

Structural and Electrochemical Characterization of Zn1−xFexO—Effect of Aliovalent Doping on the Li+ Storage Mechanism

Directory of Open Access Journals (Sweden)

Gabriele Giuli

2017-12-01

Full Text Available In order to further improve the energy and power density of state-of-the-art lithium-ion batteries (LIBs, new cell chemistries and, therefore, new active materials with alternative storage mechanisms are needed. Herein, we report on the structural and electrochemical characterization of Fe-doped ZnO samples with varying dopant concentrations, potentially serving as anode for LIBs (Rechargeable lithium-ion batteries. The wurtzite structure of the Zn1−xFexO samples (with x ranging from 0 to 0.12 has been refined via the Rietveld method. Cell parameters change only slightly with the Fe content, whereas the crystallinity is strongly affected, presumably due to the presence of defects induced by the Fe3+ substitution for Zn2+. XANES (X-ray absorption near edge structure data recorded ex situ for Zn0.9Fe0.1O electrodes at different states of charge indicated that Fe, dominantly trivalent in the pristine anode, partially reduces to Fe2+ upon discharge. This finding was supported by a detailed galvanostatic and potentiodynamic investigation of Zn1−xFexO-based electrodes, confirming such an initial reduction of Fe3+ to Fe2+ at potentials higher than 1.2 V (vs. Li+/Li upon the initial lithiation, i.e., discharge. Both structural and electrochemical data strongly suggest the presence of cationic vacancies at the tetrahedral sites, induced by the presence of Fe3+ (i.e., one cationic vacancy for every two Fe3+ present in the sample, allowing for the initial Li+ insertion into the ZnO lattice prior to the subsequent conversion and alloying reaction.

Electrical and optical properties of Si-doped Ga2O3

Science.gov (United States)

Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

2017-05-01

The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

Strong pinning in very fast grown reactive co-evaporated GdBa2Cu3O7 coated conductors

Directory of Open Access Journals (Sweden)

J. L. MacManus-Driscoll

2014-08-01

Full Text Available We report on compositional tuning to create excellent field-performance of Jc in “self-doped,” GdBa2Cu3O7−y (GdBCO coated conductors grown by ultrafast reactive co-evaporation. In order to give excess liquid and Gd2O3, the overall compositions were all Ba-poor and Cu-rich compared to GdBCO. The precise composition was found to be critical to the current carrying performance. The most copper-rich composition had an optimum self-field Jc of 3.2 MA cm−2. A more Gd-rich composition had the best in-field performance because of the formation of low coherence, splayed Gd2O3 nanoparticles, giving Jc (77 K, 1 T of over 1 MA cm−2 and Jc (77 K, 5 T of over 0.1 MA cm−2.

Magnetic Properties of Electron-Doped LaCoO3

Science.gov (United States)

Tomiyasu, Keisuke; Sato, Mika; Koyama, Shun-Ichi; Nojima, Tsutomu; Kajimoto, Ryoichi; Ji, Sungdae; Iwasa, Kazuaki

2017-09-01

We studied electron-doped LaCo1 - yTey6 + O3 by magnetization measurements and neutron scattering. The effective Bohr magneton, estimated by Curie-Weiss fitting around room temperature, is independent of y. This suggests that magnetic Co3+(HS), not nonmagnetic Co3+(LS), is mainly replaced by doped magnetic Co2+(HS). At the lowest temperatures, a Brillouin-function-like saturating behavior persists in the magnetization curves even in the high-y samples, and neither a clear magnetic reflection nor magnetic dispersion is observed by neutron scattering. These findings indicate that the magnetic correlation is very weak, in contrast to the well-known hole-doped LaCoO3 accompanied by a drastic transition to a ferromagnetic metal. However, we also found that the low-y samples exhibit nonnegligible enhancement of the saturated magnetization by ˜2μB per a doped electron. All these characteristics are discussed in the light of the activation and inactivation of a spin-state blockade.

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

Science.gov (United States)

2009-02-19

34 (to be submitted to APL) " Positron Annihilation Spectroscopy of Annealed and As-grown Be-doped GaN" (to be submitted to APL - delayed by the...WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) 6. AUTHOR(S) DRS DOOLITTILE, FRAZIER, BURNHAM, PRITCHETT, BILLINGSLEY...NEXT GENERATION EPITAXY: NON-EQUILIBRIUM WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) VOLUME I 3D COMPOSITION/DOPING

Doping with lead of single crystals of solid solutions of Sbsub(1,5)Bisub(0,5)Tlsub(3)-Bisub(2)Sesub(3)

International Nuclear Information System (INIS)

Abrikosov, N.Kh.; Ivanova, L.D.; Polikarpova, N.V.; Galechyan, M.G.

1984-01-01

By the Czochralski method with liquid phase additional feeding single crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system with 0, 10 and 15 mol.% of Bi 2 Se 3 content doped with lead up to 1.37 at/cm 3 are grown. Lead content in crystals and alloys is determined by the atom-abmethod using the scale of standard solutions. It has been found that the effective coefficient of lead distribution in investigated solutions is approximately 0.5. It is shown that lead addition leads to increase of electric conductivity and heat conductivity and decrease of thermoelectric coeffcient at the expense of current carriers concentration growth, the lead in crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system being a single charge acceptor

Comparative study of transparent ceramic and single crystal Ce doped LuAG scintillators

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Yanagida, Satoko; Yoshikawa, Akira; Yagi, Hideki; Yanagitani, Takagimi

2011-01-01

Transparent ceramic Ce 0.5% doped Lu 3 Al 5 O 12 (LuAG) scintillator grown by the sintering method and single crystalline Ce doped LuAG grown by the Czochralski method are prepared. They are cut to the physical dimensions 4 × 4 × 2 mm 3 . Their transmittance and radio luminescence spectra are evaluated. They are both transmissive in wavelength longer than 500 nm and intense Ce 3+ 5d–4f emission appears around 520 nm. When 137 Cs γ-ray is irradiated, 662 keV photo-absorption peaks are clearly observed in each sample. The transparent ceramic one shows higher light yield than that of the single crystalline one. The absolute light yield of the ceramic sample is turned out to be 14800 ± 1500 ph/MeV. The decay time constants are evaluated under pulse X-ray excitation. The main component of the decay time of ceramic and single crystalline one are determined as 37 and 46 ns, respectively.

Thermoluminescence of LaAlO3 crystals doped with Eu and Ce - Dy ions exposed to ultraviolet and gamma radiation

International Nuclear Information System (INIS)

Oliveira, Vitor H.; Faria, Luiz O.; Silva, Edna S.

2011-01-01

Due to environmental problems such as degradation of the ozone layer and control of radiation levels in units of radiation, new dosimetric materials with high sensitivity for ultraviolet (UV) and gamma radiation are of great interest for applications in environmental dosimetry. In this context, this paper presents the results of a systematic investigation of the thermoluminescent (TL) response of LaAlO 3 crystals doped with different concentrations of trivalent optically active ions exposed to UV and gamma radiation doses. The work has been performed under a direct cooperation between the Institute of Inorganic Chemistry in Moscow (IGIC), responsible for crystal growth, and the Center for Development of Nuclear Technology (CDTN), responsible for the study of its luminescent properties. In this context, samples doped with 1% of Eu 3+ , 1% Ce 3+ , 5% of Ce 3+ and also co-doped with 5% Ce 3+ and 1% Dy 3+ were grown under hydrothermal conditions. The investigation was divided into two fronts, one for gamma radiation and the other for UV radiation. In the investigation with gamma radiation the best TL response has been obtained from LaAlO 3 :Eu. This crystal has shown good sensitivity and excellent linearity between TL output and the delivered gamma doses ranging from 0.1 to 10.0 mGy. In addition, its TL curve is quite similar to the Al 2 O 3 :C, a commercial TL phosphor with high sensitivity to gamma radiation. In the investigation with UV radiation the best response has been achieved for co-doped LaAlO 3 :Ce,Dy. They have excellent sensitivity and good linearity for spectral irradiances ranging from 0.042 to 1.2 mJ.cm -2 . (author)

Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Science.gov (United States)

Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

2012-03-01

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

On the thermal growth and properties of doped TiO2 and In2O3 elongated nanostructures and nanoplates

International Nuclear Information System (INIS)

Cremades, A.; Herrera, M.; Bartolomé, J.; Vásquez, G.C.; Maestre, D.; Piqueras, J.

2014-01-01

In this work, the driving forces behind the growth mechanisms of In 2 O 3 and TiO 2 micro- and nano-structures grown by an evaporation–solidification method are discussed. Effective or limited doping incorporation and its influence on the growth and morphology of the low dimensional structures are also assessed. A dislocation driven growth mechanism is proposed for indium oxide, indium tin oxide (ITO) and zinc doped indium oxide (IZO) nanowires. This growth mechanism is extended to the growth of IZO nano-plates. On the other hand, different low dimensional TiO 2 morphologies, mainly nanowires, needles, and bidimensional leaf-like nanostructures, have been obtained by an anisotropic induced growth. By introducing Cr in the precursor mixture, needles are formed showing stepped lateral faces related to oxygen defect stoichiometry areas as observed by EDS mapping

Structural and magnetic properties of Co-doped (La,Sr)TiO{sub 3} epitaxial thin films probed using x-ray magnetic circular dichroism

Energy Technology Data Exchange (ETDEWEB)

Copie, O; Mattana, R; Bibes, M; Cros, V; Herranz, G; Anane, A; Ranchal, R; Jacquet, E; Bouzehouane, K; Petroff, F; Barthelemy, A [Unite Mixte de Physique CNRS/Thales, Campus de l' Ecole Polytechnique, 1 Avenue A Fresnel, 91767 Palaiseau, France and Universite Paris-Sud 11, 91405 Orsay (France); Rode, K [Center for Research on Adaptative Nanostructures and Nanodevices, Trinity College Dublin, Dublin 2, Republic of Ireland (Ireland); Arrio, M-A [Institut de Mineralogie et de Physique des Milieux Condenses CNRS, Universite Pierre et Marie Curie, 140 rue de Lourmel 75015 Paris (France); Bencok, P; Brookes, N B, E-mail: agnes.barthelemy@thalesgroup.co [European Synchrotron Radiation Facility, 6 rue Horowitz, 38083 Grenoble (France)

2009-10-07

We report a study of Co-doped La{sub 0.37}Sr{sub 0.63}TiO{sub 3-delta} thin films grown by pulsed laser deposition in various oxygen pressure conditions. X-ray absorption spectroscopy and magnetic circular dichroism measurements at the Co L{sub 2,3} edges reveal that the cobalt mainly substitutes for the titanium and is in an ionic state. Nevertheless, in some films, indications of additional cobalt metallic impurities were found, suggesting that the intrinsic character of this magnetic system remains questionable.

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

2014-01-01

Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

2011-12-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Science.gov (United States)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

2011-12-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

2011-01-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10 17 cm -3 at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As Zn (V Zn ) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn ) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

Study of the structural and electrical behavior of Bi(Mg,TiO3 modified (Ba,CaTiO3 ceramics

Directory of Open Access Journals (Sweden)

Md. Kashif Shamim

2016-12-01

Full Text Available The ability of BaTiO3 to form solid solutions with different dopants (both iso- and aliovalent makes it versatile for various applications. In the present study, (Ba,CaTiO3 (BCT is modified with Bi(MgTiO3 (BMT in search for new lead-free ferroelectric material and improve their properties. For this purpose, BCT acts as a main base material and BMT acts as a modifier to fabricate a multifunctional material. In this study, we report the structural and electrical properties of lead free piezo-ceramics (1−x(Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5O3 with x=0.2, 0.4, 0.5 prepared by solid-state sintering technique. Single perovskite phase with tetragonal structure is obtained for all the compositions, which is reconfirmed by the Raman Spectroscopic study. Dielectric study confirm the temperature stable behavior of the dielectric permittivity values above 300∘C. The dielectric constant value decreases with increase in BMT doping content. Impedance Spectroscopic study confirms non-Debye type dielectric relaxation in the specimen. The Nyquist plot and conductivity studies show the negative temperature coefficient of resistance behavior (NTCR of the samples.

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

2009-01-15

Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

Nanocrystalline spinel ferrites by solid state reaction route

Indian Academy of Sciences (India)

Wintec

Nanocrystalline spinel ferrites by solid state reaction route. T K KUNDU* and S MISHRA. Department of Physics, Visva-Bharati, Santiniketan 731 235, India. Abstract. Nanostructured NiFe2O4, MnFe2O4 and (NiZn)Fe2O4 were synthesized by aliovalent ion doping using conventional solid-state reaction route. With the ...

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Directory of Open Access Journals (Sweden)

Fu Chen

2017-12-01

Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Science.gov (United States)

Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

Upconversion improvement in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles by doping Al{sup 3+} ions

Energy Technology Data Exchange (ETDEWEB)

Zhou, Haifang [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, Jiangsu (China); Wang, Xiechun; Lai, Yunfeng; Cheng, Shuying; Zheng, Qiao; Yu, Jinlin [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China)

2017-10-15

Rare-earth ion-doped upconversion (UC) materials show great potential applications in optical and optoelectronic devices due to their novel optical properties. In this work, hexagonal KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles (NPs) were successfully synthesized by a hydrothermal method, and remarkably enhanced upconversion luminescence in green and red emission bands in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs has been achieved by doping Al{sup 3+} ions under 980 nm excitation. Compared to the aluminum-free KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs sample, the UC fluorescence intensities of the green and red emissions of NPs doped with 10 at.% Al{sup 3+} ions were significantly enhanced by 5.9 and 7.3 times, respectively. Longer lifetimes of the doped samples were observed for the {sup 4}S{sub 3/2} state and {sup 4}F{sub 9/2} state. The underlying reason for the UC enhancement by doping Al{sup 3+} ions was mainly ascribed to distortion of the local symmetry around Er{sup 3+} ions and adsorption reduction of organic ligands on the surface of NPs. In addition, the influence of doping Al{sup 3+} ions on the structure and morphology of the NPs samples was also discussed. (orig.)

Wide-range tunable bandgap in Bi1−xCaxFe1−yTiyO3−δ nanoparticles via oxygen vacancy induced structural modulations at room temperature

International Nuclear Information System (INIS)

Mocherla, Pavana S V; Sudakar, C; Gautam, Sanjeev; Chae, Keun Hwa; Rao, M S Ramachandra

2015-01-01

We demonstrate that oxygen vacancies (V O ) produced by aliovalent (Ca 2+ ) doping in BiFeO 3 (BCFO) and associated structural changes due to V O ordering result in systematic alteration of the bandgap (E g ) over a wide range from 1.5 eV to 2.3 eV. By contrast, the change in the bandgap of a Ca 2+ and Ti 4+ co-doped BiFeO 3 (BCFTO) system, wherein the V O formation is suppressed, is negligible. These contrastive results strongly confirm the role of oxygen vacancies in altering the bandgap of BCFO. Irrespective of doping, microstrain, which is found to be large (0.3 to 1.2%) below a critical size (d c ∼ 60 nm) also produces a small, yet linear change in the bandgap (E g from 2.0 to 2.3 eV). The cubic phase stabilizes gradually in BCFO for x > 0.1 through an orthorhombic phase (for 0.05 < x < 0.1), whereas it directly transforms for x > 0.1 in BCFTO. This change in BCFO at 300 K suggests a high-pressure-like (or high-temperature-like) effect of the oxygen vacancies and dopants on the structure. Systematic variations in the relative intensities and peak positions of Fe d–d transitions in BCFO reveal the local changes in Fe–O–Fe coordination. These results along with XANES and HRTEM studies substantiate the observed structural changes. (paper)

Stoichiometric transfer of material in the infrared pulsed laser deposition of yttrium doped Bi-2212 films

International Nuclear Information System (INIS)

De Vero, Jeffrey C.; Blanca, Glaiza Rose S.; Vitug, Jaziel R.; Garcia, Wilson O.; Sarmago, Roland V.

2011-01-01

Highlights: → This work describes the stoichiometric transfer of Y-doped Bi-2212 during IR-PLD. → As-deposited films show spheroidal morphology with similar composition as the target. Relatively flat and highly c-axis oriented films were obtained after heat treatment. → IR-PLD can be a viable technique in growing other high Tc superconducting materials. - Abstract: Films of Y-doped Bi-2212 were successfully grown on MgO (1 0 0) substrates by infrared pulsed laser deposition (IR-PLD). With post-heat treatments, smooth and highly c-axis oriented films were obtained. The average compositions of the films have the same stoichiometry as the target. Y content is also preserved on the grown films at all doping levels. The electrical properties of the grown Y-doped Bi-2212 films exhibit the expected electrical properties of the bulk Y-doped Bi-2212. This is attributed to the stoichiometric transfer of material by IR-PLD.

Crystal growth, spectroscopic characterization, and continuous wave laser operation of Nd3+-doped LiLuF4 crystal

Science.gov (United States)

Zhao, C. C.; Hang, Y.; Zhang, L. H.; He, X. M.; Yin, J. G.; Li, R.; Yu, T.; Chen, W. B.

2011-04-01

Nd3+-doped LiLuF4 single crystal with high optical quality was grown by Czochralski technique. The segregation coefficient of Nd3+ in LiLuF4 crystal was determined by the inductively coupled plasma atomic emission spectrometry method. Polarized absorption and fluorescence spectra were investigated. The peak absorption cross section at 792 nm and peak emission cross section at 1053 nm are 6.94×10-20 and 7.60×10-20 cm2, respectively. With a laser-diode as the pump source, a maximum 6.22 W continuous-wave laser output at 1053 nm has been obtained with a slope efficiency of 37.2% with respect to the pump power.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

2018-01-01

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi

2018-01-18

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

KAUST Repository

Xing, G. Z.; Yi, J. B.; Yan, F.; Wu, Tao; Li, S.

2014-01-01

temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed

Study of the growth and pyroelectric properties of TGS crystals doped with aniline-family dipolar molecules

Science.gov (United States)

Zhang, Kecong; Song, Jiancheng; Wang, Min; Fang, Changshui; Lu, Mengkai

1987-04-01

TGS crystals doped with aniline-family dipolar molecules (aniline, 2-aminobenzoic acid, 3-aminobenzoic acid, 3-aminobenzene-sulphonic acid, 4-aminobenzenesulphonic acid and 4-nitroraniline) have been grown by the slow-cooling solution method. The influence of these dopants on the growth habits, crystal morphology pyroelectric properties, and structure parameters of TGS crystals has been systematically investigated. The effects of the domain structure of the seed crystal on the pyroelectric properties of the doped crystals have been studied. It is found that the spontaneous polarization (P), pyroelectric coefficient (lambda), and internal bias field of the doped crystals are slightly higher than those of the pure TGS, and the larger the dipole moment of the dopant molecule, the higher the P and lambda of the doped TGS crystal.

NIR to visible upconversion in Er3+/Yb3+ co-doped CaYAl3O7 phosphor obtained by solution combustion process

International Nuclear Information System (INIS)

Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Nordmann, Joerg; Haase, Markus

2011-01-01

Using the combustion synthesis, CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared at low temperatures (550 o C) in a few minutes. Formation of the compound was confirmed by X-ray powder diffraction. Near-infrared to visible upconversion fluorescence emission in the Er 3+ doped CaYAl 3 O 7 phosphor powder has been observed. The effect of co-doping with triply ionized ytterbium in the CaYAl 3 O 7 :Er 3+ phosphor has been studied and the process involved is discussed. - Highlights: → The green emitting up-conversion CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared by easy combustion method. → The combustion method is a simple, energy saving, fast and economical viable process. → The luminescence intensity in the co-doped phosphor is enhanced by several times compared to that of the singly (Er 3+ ) doped phosphor.

Stacking faults and phase changes in Mg-doped InGaN grown on Si

International Nuclear Information System (INIS)

Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

2009-01-01

We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Antimicrobial activity and second harmonic studies on organic non-centrosymmetric pure and doped ninhydrin single crystals

Science.gov (United States)

Prasanyaa, T.; Jayaramakrishnan, V.; Haris, M.

2013-03-01

In this paper, we report the successful growth of pure, Cu2+ ions and Cd2+ ions doped on ninhydrin single crystals by slow solvent evaporation technique. The presence of Cu2+ and Cd2+ ions in the specimen of ninhydrin single crystal has been determined by atomic absorption spectroscopy. The powder X-ray diffraction analysis was done to calculate the lattice parameters of the pure and doped crystals. The percentage of transmittance of the crystal was recorded using the UV-Vis Spectrophotometer. Thermal behaviors of the grown crystals have been examined by the thermal gravimetric/differential thermal analysis. The hardness of the grown crystals was assessed and the results show the minor variation in the hardness value for the pure and doped ninhydrin samples. The value of the work hardening coefficient n was found to be 2.0, 1.0 and 1.06 for pure, copper and cadmium doped ninhydrin crystals respectively. The second harmonic generation efficiency of Cd2+ and Cu2+ doped ninhydrin is 8.3 and 6.3 times greater than well known nonlinear crystal of potassium dihydrogen phosphate respectively. The antibacterial and antifungal activities of the title compound were performed by disk diffusion method against the standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillis niger and Aspergillus flavus.

Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications

Directory of Open Access Journals (Sweden)

Pantelija M. Nikolic

2015-01-01

Full Text Available PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the “n” type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

Energy Technology Data Exchange (ETDEWEB)

Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

2017-01-15

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

International Nuclear Information System (INIS)

Kim, Byunggu; Leem, Jae-Young

2017-01-01

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Thermoluminescence of LaAlO{sub 3} crystals doped with Eu and Ce - Dy ions exposed to ultraviolet and gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Vitor H.; Faria, Luiz O., E-mail: farialo@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil); Silva, Edna S. [Universidade Federal de Minas Gerais (DEN/UFMG), Belo Horizonte, MG (Brazil). Dept. de Energia Nuclear; Khaidukov, Nicholas M. [Kurnakov Institute of General and Inorganic Chemistry, IGIC, Moscow (Russian Federation)

2011-07-01

Due to environmental problems such as degradation of the ozone layer and control of radiation levels in units of radiation, new dosimetric materials with high sensitivity for ultraviolet (UV) and gamma radiation are of great interest for applications in environmental dosimetry. In this context, this paper presents the results of a systematic investigation of the thermoluminescent (TL) response of LaAlO{sub 3} crystals doped with different concentrations of trivalent optically active ions exposed to UV and gamma radiation doses. The work has been performed under a direct cooperation between the Institute of Inorganic Chemistry in Moscow (IGIC), responsible for crystal growth, and the Center for Development of Nuclear Technology (CDTN), responsible for the study of its luminescent properties. In this context, samples doped with 1% of Eu{sup 3+}, 1% Ce{sup 3+}, 5% of Ce{sup 3+} and also co-doped with 5% Ce{sup 3+} and 1% Dy{sup 3+} were grown under hydrothermal conditions. The investigation was divided into two fronts, one for gamma radiation and the other for UV radiation. In the investigation with gamma radiation the best TL response has been obtained from LaAlO{sub 3}:Eu. This crystal has shown good sensitivity and excellent linearity between TL output and the delivered gamma doses ranging from 0.1 to 10.0 mGy. In addition, its TL curve is quite similar to the Al{sub 2}O{sub 3}:C, a commercial TL phosphor with high sensitivity to gamma radiation. In the investigation with UV radiation the best response has been achieved for co-doped LaAlO{sub 3}:Ce,Dy. They have excellent sensitivity and good linearity for spectral irradiances ranging from 0.042 to 1.2 mJ.cm{sup -2}. (author)

Luminescence properties of Ce3+ doped gadolinium-calcium-silicaborate glass scintillator

International Nuclear Information System (INIS)

Park, J.M.; Ha, D.H.; Kaewjeang, S.; Maghanemi, U.; Kothan, S.; Kaewkhao, J.; Kim, H.J.

2016-01-01

In this work, the Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators of the composition ratio 25Gd 2 O 3 :10CaO:10SiO 2 :(55−x)B 2 O 3 :xCeF 3 , have been fabricated by using the melt-quenching technique. The doping concentration of the Ce 3+ was varied from 0.05 mol% to 2.5 mol%. The 4f-5d transition of the Ce 3+ allowed scintillation with a fast decay time. The absorption spectrum, X-ray induced emission spectrum, photo luminescence spectrum, laser luminescence spectrum and decay time of the scintillators were measured for studying the luminescence properties. From the X-ray induced emission spectrum result, we checked the trend between doping concentration and light yield. The laser induced luminescence spectrum was measured while changing the temperature from 300 K to 10 K. We also measured the decay time by using the laser excitation of the 0.15 mol% Ce 3+ doped glass scintillator. - Highlights: • Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators were developed. • Glass is easily fabricated with large sizes and various doping materials. • The luminescence properties are studied by using various radiation sources. • The light yield and decay time were measured at low temperature. • One decay time component is found.

Magnetorefractive effect in the La{sub 1−x}K{sub x}MnO{sub 3} thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Sukhorukov, Yu.P., E-mail: suhorukov@imp.uran.ru [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Telegin, A.V. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Bessonov, V.D. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); University of Bialystok, 15-424 Bialystok (Poland); Gan’shina, E.A.; Kaul’, A.R.; Korsakov, I.E.; Perov, N.S.; Fetisov, L.Yu. [Faculty of Physics, Moscow State University, Moscow 119991 (Russian Federation); Yurasov, A.N. [Moscow State Technical University of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation)

2014-10-01

Thin epitaxial La{sub 1−x}K{sub x}MnO{sub 3} films were grown using two-stage procedure. Influence of substitution of La{sup 3+} ions with K{sup +} ions on the optical and electrical properties of La{sub 1−x}K{sub x}MnO{sub 3} films (x=0.05, 0.10, 0.15 i 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La{sub 1−x}K{sub x}MnO{sub 3} with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range. - Highlights: • Giant magnetorefractive effect was obtained in La{sub 1−x}K{sub x}MnO{sub 3} films in the infrared. • Inhomogeneity as well as doping level strongly influences the value of magnetorefractive effect. • Resonance-like bands have been observed in the magnetoreflection spectra of the films. • The obtained experimental data can be explained in the framework of the MRE theory.

Impedance spectroscopy of Li2CO3 doped (Ba,Sr)TiO3 ceramic

Science.gov (United States)

Ham, Yong-Su; Koh, Jung-Hyuk

2013-02-01

(BaxSr1-x)TiO3-based ceramic has been considered as one of the most important electronic materials widely employed in microwave passive device applications. Many researches have been performed to lower the high sintering temperature, by adding various dopants such as B2O3, La2O3, etc. In our previous study, by adding Li2CO3 to (Ba0.5,Sr0.5)TiO3 ceramics, the sintering temperature of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics decreased from 1350 to 900 °C. This study observed the crystalline structure and electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics. In scanning the crystalline structure of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, no pyro phase was observed by X-ray diffraction analysis. To investigate the electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, real and imaginary parts of the impedances were analyzed. Complex impedance data were measured from 100 Hz to 1 MHz at various temperature ranges.

Photoluminescence characteristics of reddish-orange Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors

Energy Technology Data Exchange (ETDEWEB)

Jeong, Jun Ho; Bandi, Vengala Rao; Grandhe, Bhaskar Kumar; Jang, Ki Wan; Lee, Ho Sueb [Changwon National University, Changwon (Korea, Republic of); Yi, Soung Soo [Silla University, Busan (Korea, Republic of); Jeong, Jung Hyun [Pukyong National University, Busan (Korea, Republic of)

2011-02-15

Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors were synthesized by using a conventional solid state reaction method at 750 .deg. C. The emission spectra of KZnGd{sub 1-x}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} with {lambda}{sub ex} = 395 nm and KZnGd{sub 1-y}(PO{sub 4}){sub 2}:Sm{sup 3+}{sub y} with {lambda}{sub ex} = 403 nm phosphors showed intense {sup 5}D{sub 0} {yields} {sup 7}F{sub 1}, {sup 4}G{sub 5/2} {yields} {sup 6}H{sub 7/2} emission transitions at 595 nm and 599 nm, respectively. The optimum relative intensity of the KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} , Sm{sup 3+}{sub y} phosphor was obtained for the doping concentrations of (x = 0.09, y = 0.01). In addition, the temperature dependent luminescence intensity of the synthesized phosphors was investigated and the thermal stability of the KZnGd(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor was found to be higher than that of standard YAG:Ce{sup 3+} and KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} Sm{sup 3+}{sub y} under near ultra-violet (NUV) light emitting diode excitation (LED). Therefore, we suggest that Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors should be efficient for different red-color-emitting display device applications and NUV-LED-based white-light-emitting diodes.

Facile one-pot synthesis of Ni2+-doped (NH4)2V3O8 nanoflakes@Ni foam with visible-light-driven photovoltaic behavior for supercapacitor application

Science.gov (United States)

Zhou, Qingfeng; Gong, Yun; Lin, Jianhua

2018-05-01

In the present work, Ni2+-doped (NH4)2V3O8 nanoflakes are in situ grown on Ni foam through a facile one-pot hydrothermal technique in a NH4VO3 aqueous solution. The Ni2+-doped (NH4)2V3O8@Ni foam composite material can be used as binder- and conductivity agent-free electrode in supercapacitor, it manifests a large specific capacitance of 465.5 F g-1 at a current density of 0.2 A g-1 and a superior rate capability of 317.5 F g-1 at 10 A g-1, which is beneficial from its three-dimensional porous architecture cross-linked by the ultrathin Ni2+-doped (NH4)2V3O8 nanoflakes on Ni foam. Meanwhile, the Ni2+-doped (NH4)2V3O8@Ni foam//Activated carbon asymmetric supercapacitor can deliver a maximum energy density of 20.1 W h kg-1 at a power density of 752.0 W kg-1. Significantly, the Ni2+-doped (NH4)2V3O8@Ni foam electrode possesses reversible electrochromic behavior, and it shows obvious visible light-driven photoresponse with much higher specific capacitance (645.3 F g-1 at 0.5 A g-1) under illumination (650 nm > λ > 350 nm, 100 mW cm-2), which is probably associated with the semiconducting characteristics of the spin-polarized (NH4)2V3O8 and the quantum confinement effect of the nanoflakes.

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Color tunable emission through energy transfer from Yb3+ co-doped SrSnO3: Ho3+ perovskite nano-phosphor

Science.gov (United States)

Jain, Neha; Singh, Rajan Kr.; Sinha, Shriya; Singh, R. A.; Singh, Jai

2018-04-01

First time color tunable lighting observed from Ho3+ and Yb3+ co-doped SrSnO3 perovskite. Down-conversion and up-conversion (UC) photoluminescence emission spectra were recorded to understand the whole mechanism of energy migration between Ho3+ and Yb3+ ions. The intensity of green and red emission varies with Yb3+ doping which causes multicolour emissions from nano-phosphor. The intensity of UC red emission (654 nm) obtained from 1 at.% Ho3+ and 3 at.% Yb3+ co-doped nano-phosphor is nine times higher than from 1 at.% Ho3+ doped SrSnO3 nano-phosphor. Enhanced brightness of 654 nm in UC process belongs in biological transparency window so that it might be a promising phosphor in the bio-medical field. Moreover, for the other Yb3+ co-doped nano-phosphor, Commission Internationale de l'Éclairage chromaticity co-ordinates were found near the white region and their CCT values lie in the range 4900-5100 K indicating cool white. Decay time was measured for 545 nm emission of Ho3+ ion found in 7.652 and 8.734 µs at 355 nm excitation. The variation in lifetime was observed in ascending order with increasing Yb3+ concentration which supports PL emission spectra observation that with increasing Yb3+ concentration, rate of transition has changed. These studies reveal that Ho3+ and Yb3+ co-doped phosphor is useful for fabrication of white LEDs.

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

Science.gov (United States)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

2018-04-01

Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Multimodal emissions from Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate glass: Upconversion, downshifting and quantum cutting

Energy Technology Data Exchange (ETDEWEB)

Bahadur, A.; Yadav, R.S.; Yadav, R.V.; Rai, S.B., E-mail: sbrai49@yahoo.co.in

2017-02-15

This paper reports the optical properties of Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method. The absorption spectrum of the Yb{sup 3+} doped LB glass contains intense NIR band centered at 976 nm due to {sup 2}F{sub 7/2}→{sup 2}F{sub 5/2} transition. The emission spectra of the prepared glasses have been monitored on excitation with 266, 355 and 976 nm. The Yb{sup 3+} doped glass emits a broad NIR band centered at 976 nm whereas the Tb{sup 3+} doped glass gives off visible bands on excitations with 266 and 355 nm. When the Tb{sup 3+} and Yb{sup 3+} ions are co-doped together, the emission intensity in the visible region decreases whereas it increases in the NIR region significantly. The increase in the emission intensity in the NIR region is due to efficient cooperative energy transfer (CET) from Tb{sup 3+} to Yb{sup 3+} ions. The quantum cutting efficiency for Tb{sup 3+}/Yb{sup 3+} co-doped glass has been calculated and compared for 266 and 355 nm excitations. The quantum cutting efficiency is larger for 355 nm excitation (137%). The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass also emits upconverted visible bands on excitation with 976 nm. The mechanisms involved in the energy transfer have been discussed using schematic energy level diagram. The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may be used in the optical devices and in solar cell for solar spectral conversion and behaves as a multi-modal photo-luminescent material. - Graphical abstract: The Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method emits upconverted visible emissions through upconversion CET from Yb{sup 3+} to Tb{sup 3+} ions and quantum cutting emissions through downconversion CET from Tb{sup 3+} to Yb{sup 3+} ions. Therefore, the Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may find applications in optical devices and solar cell and behaves as a multi-modal photo-luminescent material. - Highlights: • The Tb{sup 3+}/Yb{sup 3

Doped beryllium lanthanate crystals

International Nuclear Information System (INIS)

1974-01-01

Monocrystals of doped beryllium lanthanate, Be 2 Lasub(2-2x)Zsub(2x)O 5 --where Z may be any rare earth, but preferably neodymium, and x may have values between 0.001 and 0.2, but preferably between 0.007 and 0.015-- are recommended as laser hosts. They are softer and may be grown at a lower temperature than Y 3 A1 5 O 12 :Nd (YAG:Nd). Their chemical composition and preparation are described. An example of an optically pumped laser apparatus with this type of monocrystal as laser host is presented

Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

Energy Technology Data Exchange (ETDEWEB)

Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

2016-01-15

The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

Science.gov (United States)

Prasanyaa, T.; Haris, M.; Jayaramakrishnan, V.; Amgalan, M.; Mathivanan, V.

2013-10-01

Optically transparent Cu2+ and Cd2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet-visible-near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu2+ and Cd2+. The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu2+ doped LATF is 2.8 times greater and Cd2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

International Nuclear Information System (INIS)

Prasanyaa, T; Haris, M; Amgalan, M; Mathivanan, V; Jayaramakrishnan, V

2013-01-01

Optically transparent Cu 2+ and Cd 2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet–visible–near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu 2+ and Cd 2+ . The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu 2+ doped LATF is 2.8 times greater and Cd 2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus. (paper)

Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

Science.gov (United States)

Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

2018-03-05

3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Science.gov (United States)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Electrochemical sensing behaviour of Ni doped Fe{sub 3}O{sub 4} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Suresh, R.; Giribabu, K.; Manigandan, R.; Narayanan, V., E-mail: vnnara@yahoo.co.in [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai 600 025 (India); Vijayalakshmi, L. [Annai Veilankanni' s College for Women (Arts and Science), Saidapet, Chennai 600015 (India); Stephen, A. [Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600 025 (India)

2014-01-28

Ni doped Fe{sub 3}O{sub 4} nanoparticles were synthesized by simple hydrothermal method. The prepared nanomaterials were characterized by X-ray diffraction analysis, DRS-UV-Visible spectroscopy and field emission scanning electron microscopy. The XRD confirms the phase purity of the synthesized Ni doped Fe{sub 3}O{sub 4} nanoparticles. The optical property of Ni doped Fe{sub 3}O{sub 4} nanoparticles were studied by DRS UV-Visible analysis. The electrochemical sensing property of pure and Ni doped Fe{sub 3}O{sub 4} nanoparticles were examined using uric acid as an analyte. The obtained results indicated that the Ni doped Fe{sub 3}O{sub 4} nanoparticles exhibited higher electrocatalytic activity towards uric acid.

Luminescent properties and quenching effects of Pr3+ co-doping in SiO2:Tb3+/Eu3+ nanophosphors

CSIR Research Space (South Africa)

Mhlongo, GH

2014-02-01

Full Text Available Luminescence properties of Pr(sup3+) single doped SiO2 and Pr(sup3+) co-doped SiO(sub2):Tb(sup3+)/Eu(sup3+) nanophosphors synthesized using sol–gel method were investigated. X-ray diffraction (XRD), and scanning electron microscope (SEM) were used...

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

International Nuclear Information System (INIS)

Liu Yang; Yang Yongchun

2016-01-01

The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

Growth and characterization of magnesium chloride and lanthanum chloride doped strontium tartrate crystals - gel method

International Nuclear Information System (INIS)

Kalaiarasi, S.; Jaikumar, D.

2014-01-01

Growth of single crystals of doped strontium tartrate by controlled diffusion of strontium chloride into the silica gel charged with tartaric acid at room temperature is narrated. In this study, we synthesized magnesium chloride (5% and 10%) doped strontium tartrate crystals and Lanthanum chloride (5%, 10% and 15%) doped strontium tartrate crystals are grown. The crystal structure of the compound crystals was confirmed by single crystal X-ray diffraction. The Fourier transform infrared spectrum of pure and doped crystals are recorded and analyzed. The UV-Vis-NIR spectrum analysis reveals that the optical study of the grown crystals. The second harmonic generation efficiency was measured by using Kurtz powder technique with Nd:YAG laser of wavelength 1064 nm. (author)

Thermoelectric properties of ZnSb films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Watko, E; Colpitts, T

1997-07-01

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

Al2O3 doped TiO2 ceramic waste forms

International Nuclear Information System (INIS)

Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

1999-01-01

Melting of the mixture of Nd 2 O 3 , CeO 2 , SrO, TiO 2 and Al 2 O 3 at 1673 K for 1 hour produced one RE 2 Ti 3 O 9 phase compound. Differential Scanning Calorimetry (DSC) measurement showed that the melting temperature of this compound was 1646 K. Density of the alumina doped oxide was higher than that of the oxide obtained by the pressing and sintering without alumina. Vickers hardness of the oxide obtained by the pressing and sintering was 5.3 GPa and nearly same as that of glass waste. That of the alumina doped oxide was around 7 GPa. 7 days Soxhlet leach test (MCC-5) followed by Inductively Coupled Plasma Spectrometry (ICP) showed that normalized leaching rate of Ti for the oxide obtained by the pressing and sintering was 5.54 x 10 -3 kg/m 2 and that for the alumina doped oxide was 2.24 x 10 -3 kg/m 2 . The value of Sr for the pressed and sintered sample was 0.034 x 10 -3 kg/m 2 but that for alumina doped sample was below the detection limit (0.01 x 10 -3 kg/m 2 ). Al was not detected from the leachate of the alumina doped sample. (author)

Synthesis of pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} for ITSOFC application using different wet chemical routes

Energy Technology Data Exchange (ETDEWEB)

Kumar, M. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India); Srikanth, S. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India)], E-mail: s_srikanth_99@yahoo.com; Ravikumar, B.; Alex, T.C.; Das, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

2009-02-15

Pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere.

Co-doping effects on luminescence and scintillation properties of Ce doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-01-01

The Mg, Ca, Sr and Ba 200 ppm co-doped Ce:Lu 3 Al 5 O 12 single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. The scintillation decays were accelerated by both Mg and Ca co-dopants. The Mg co-doped samples showed the fastest decay and the highest light yield among the co-doped samples

Photoluminescence properties of Li{sup +}-doped KNbO{sub 3}: Eu{sup 3+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Balakrishnaiah, R.; Kim, Dongwoo; Yi, Soungsoo; Kim, Sunghoon [Silla University, Busan (Korea, Republic of); Jang, Kiwan; Lee, Hosueb [Changwon National University, Changwon (Korea, Republic of); Moon, Byungkee; Jeong, Junghyun [Pukyong National University, Busan (Korea, Republic of)

2010-12-15

Different concentrations of Li{sup +}-ions doped KNbO{sub 3}:Eu polycrystalline powder phosphors were prepared by using the conventional solid state reaction method and were characterized by using X-ray diffraction, field emission scanning electron microscopy, and by using photoluminescence excitation and emission measurements. The morphological and the photoluminescence properties of the phosphors were effectively improved with Li-doping. The PL properties as a function of Li concentration in the Li-doped KNbO{sub 3}:Eu phosphors using different excitation wavelengths, along with a comparison of results with these in similar reported works, are discussed in the present work.

Specific features of doping with antimony during the ion-beam crystallization of silicon

Energy Technology Data Exchange (ETDEWEB)

Pashchenko, A. S., E-mail: as.pashchenko@gmail.com; Chebotarev, S. N.; Lunin, L. S. [Russian Academy of Sciences, Southern Scientific Center (Russian Federation); Irkha, V. A. [Special Engineering and Technology Department “Inversiya” Ltd. (Russian Federation)

2016-04-15

A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10{sup 18} cm{sup –3} are grown. It is shown that, as the evaporator temperature is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~10{sup 0} to ~10{sup –3}.

Irradiation-induced doping of Bismuth Telluride Bi2Te3

International Nuclear Information System (INIS)

Rischau, Carl Willem

2014-01-01

Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

Electrical properties of undoped and doped MOVPE-grown InAsSb

CSIR Research Space (South Africa)

Krug, T

2006-01-01

Full Text Available ) Simulation Figure 1: Reflectance spectrum of M3007, together with computer simulation result. d T (K) ns (cm-3) nb (cm-3) n (cm-3) µs (cm2/Vs) µb (cm2/Vs) µ (cm2/Vs) 16µm 80 3×1018 3×1014 1×1016 5×103 1×105 2×104 22µm 81 1×1018 2×1014 3...×1015 7×103 1×105 3×104 17µma 77 1×1017 2×1014 - 2×104 2×105 - a Carrier concentration and mobility given in Wang et al [10] for a 17µm InAs film grown on GaAs by molecular beam epitaxy. These results were obtained using cyclotron resonance...

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Photoluminescence study of Sm{sup 3+}–Yb{sup 3+}co-doped tellurite glass embedding silver nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Reza Dousti, M., E-mail: mrdousti@ifsc.usp.br [Laboratório de Espectroscopia de Materiais Funcionais (LEMAF), Instituto de Fisica de São Carlos, Universidade de São Paulo, Av. Trabalhador So-carlense 400, São Carlos, SP 13566-590 (Brazil); Department of Physics, Tehran-North Branch, Islamic Azad University Tehran (Iran, Islamic Republic of); Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Amjad, R.J. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Hosseinian S, R.; Salehi, M.; Sahar, M.R. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

2015-03-15

We report on the upconversion emission of Sm{sup 3+} ions doped tellurite glass in the presence of Yb{sup 3+} ions and silver nanoparticles. The enhancement of infrared-to-visible upconversion emissions is achieved under 980 nm excitation wavelength and attributed to the high absorption cross section of Yb{sup 3+} ions and an efficient energy transfer to Sm{sup 3+} ions. Further enhancements are attributed to the plasmonic effect via metallic nanoparticles resulting in the large localized field around rare earth ions. However, under excitation at 406 nm, the addition of Yb{sup 3+} content and heat-treated silver nanoparticles quench the luminescence of Sm{sup 3+} ions likely due to quantum cutting and plasmonic diluent effects, respectively. - Highlights: • Sm{sup 3+} tellurite glasses co-doped with Yb{sup 3+} ions and tri-doped with Yb{sup 3+}:Ag NPs were prepared. • In first step, Yb{sup 3+} ions enhanced the upconversion emissions of Sm{sup 3+} doped samples. • In second step, Ag NPs further enhanced the upconversion emissions in tri-doped glasses. • Finally, the quench in luminescence under 406 nm excitation is observed and discussed.

Photoluminescence and thermoluminescence properties of Tb3+ doped K3Gd(PO4)2 nanophosphor

International Nuclear Information System (INIS)

Gupta, Palvi; Bedyal, A.K.; Kumar, Vinay; Khajuria, Y.; Lochab, S.P.; Pitale, S.S.; Ntwaeaborwa, O.M.; Swart, H.C.

2014-01-01

Energy level diagram of Tb 3+ ion in the K 3 Gd(PO 4 ) 2 host lattice. - Highlights: • First time, a detailed TL and PL study on undoped and Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor. • Combustion method was employed to synthesize the Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor. • Mechanism of excitation and emission in undoped and Tb 3+ doped K 3 Gd(PO 4 ) 2 nanophosphor was given. - Abstract: Tb 3+ doped nanoparticulate K 3 Gd(PO 4 ) 2 phosphor was prepared by combustion method using urea as a fuel. The structure, optical and luminescent properties of the phosphor were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), photoluminescence spectroscopy (PL), and thermoluminescence (TL) spectroscopy. In undoped K 3 Gd(PO 4 ) 2 , the excitation and emission peaks at 273 nm and 323 nm belongs to the 8 S 7/2 → 6 I J(J=7/2) and 6 P J(J=7/2) → 8 S 7/2 transitions of Gd 3+ while green emission was observed in the Tb 3+ doped K 3 Gd(PO 4 ) 2 . TL study was carried out after exposing the samples to γ-radiations (0.1–5 kGy) in the K 3 Gd(PO 4 ) 2 :Tb 3+ (1.5 mol%). The calculated kinetic parameters were compared with different methods. The band gap of the phosphor was estimated as 5.80 eV. The green shade of the Tb 3+ ion with the CIE coordinates (x, y) as (0.29, 0.54) was in good agreement with the well known green phosphors

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

Enhanced luminescence properties of YBO{sub 3}:Eu{sup 3+} phosphors by Li-doping

Energy Technology Data Exchange (ETDEWEB)

Balakrishnaiah, R. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.kr [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Jang, Kiwan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Moon, Byung Kee; Jeong, Jung Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

2011-04-15

Different concentrations of Li-doped YBO{sub 3}:Eu{sup 3+} phosphors have been prepared by the conventional solid state reaction method and were characterized by X-ray diffraction, field emission scanning electron microscopy, photoluminescence excitation and emission measurements. An intense reddish orange emission is observed under UV excitation and the emitted radiation was dominated by an orange peak at 594 nm resulted from the {sup 5}D{sub 0} {yields} {sup 7}F{sub 1} transitions of Eu{sup 3+} ions. The brightness of the YBO{sub 3}:Eu{sup 3+} phosphor was found greatly improved with Li-doping accompanied by slight improvement in the purity of the color which might be attributed to improvement in crystallinity, grain sizes and creation of oxygen vacancies with Li-doping. The observed results have been discussed in comparison with similar reported works.

Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

Science.gov (United States)

Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

2007-02-20

We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

Energy Technology Data Exchange (ETDEWEB)

Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

2007-02-15

We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

1.8 μm luminescent properties and energy transfer of Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Wang, Cheng; Zhang, Zhixiong; Jiang, Dongsheng; Zhang, Jian; He, Shinan; Tang, Qingyang; Sheng, Qiguo; Gu, Xuemei; Zhang, Yuepin [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Chen, Baojiu [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province, 116026 (China); Jiang, Haochuan, E-mail: jianghaochuan@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, The Chinese Academy of Sciences, Ningbo, Zhejiang, 315211 (China)

2016-09-25

This paper reports on successful preparation of α-NaYF{sub 4} single crystals co-doped with ∼1.9 mol% Tm{sup 3+} and various concentrations (3.85 mol%, 7.69 mol%, 11.54 mol%, 15.38 mol%) of Yb{sup 3+} by using a flux-Bridgman method. The fluorescence decay curve was measured to investigate the luminescent properties of the Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4}, and the energy transfer process from Yb{sup 3+} to Tm{sup 3+}; the J-O intensity parameters of Tm{sup 3+} were further calculated and analyzed according to the absorption spectra. Results show that, an intense 1.8 μm emission was achieved with Yb{sup 3+} as sensitizer for Tm{sup 3+} in the α-NaYF{sub 4} single crystal under the excitation of 980 nm LD (Laser Diode) because of the strong energy transfer from Yb{sup 3+} to Tm{sup 3+}. The maximum emission intensity at 1.8 μm is obtained at about 15.38 mol% doping concentration of Yb{sup 3+} when the concentration of Tm{sup 3+} ions is fixed at ∼1.90 mol% in the current research. Moreover, the calculated maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2} for 3.85 mol% Yb{sup 3+}/1.9 mol% Tm{sup 3+} sample, and the obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) are 1543 s{sup −1} and 83.8%, respectively. Our analysis of the fluorescence dynamics indicates that electric dipole-dipole interaction is dominant for the energy transfer from Yb{sup 3+} ions to Tm{sup 3+} ions by using Inokuti-Hirayama’s model. - Highlights: • The Tm{sup 3+}/Yb{sup 3+} co-doped α-NaYF{sub 4} single crystals were grown by Bridgman method. • The 1.8 μm emission intensity is obtained at 15.38 mol% Yb{sup 3+}/1.90 mol% Tm{sup 3+} sample. • The maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2}. • The energy transfer rate is 1543 s{sup −1} and energy transfer efficiency is 83.8%. • The physical mechanism for energy transfer from Yb{sup 3+} to Tm{sup 3+} ions

Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates

Science.gov (United States)

Fujihara, Miho; Ogawa, Shun; Yoshimura, Shintaro; Inoue, Ryosuke; Maniwa, Yutaka; Taniguchi, Takashi; Watanabe, Kenji; Shinohara, Hisanori; Miyata, Yasumitsu

2017-05-01

This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G- and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials.

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

Science.gov (United States)

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

Science.gov (United States)

Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

2015-05-01

We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Structural and optical characterization of Eu3+ doped beta-Ga2O3 nanoparticles using a liquid-phase precursor method.

Science.gov (United States)

Kim, Moung-O; Kang, Bongkyun; Yoon, Daeho

2013-08-01

Eu3+ doped beta-Ga2O3 and non-doped beta-Ga2O3 nanoparticles were synthesized at 800 degrees C using a liquid-phase precursor (LPP) method, with different annealing times and Eu3+ ion concentrations. Eu3+ doped beta-Ga2O3 nanoparticles showed broad XRD peaks, revealing a second phase compared with the non-doped beta-Ga2O3 nanoparticles. The cathode luminescence (CL) spectra of beta-Ga2O3 and Eu3+ doped beta-Ga2O3 nanoparticles showed a broad band emission (300-500 nm) of imperfection and two component emissions. The luminescence quenching properties of Eu3+ dopant ion concentration appeared gradually beyond 5 mol% in our investigation.

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

International Nuclear Information System (INIS)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

2008-01-01

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

Thermoelectric Properties of the Yttrium-Doped Ceramic Oxide SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Khan, Tamal Tahsin; Ur, Soon-Chul [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-01-15

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO{sub 3} at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO{sub 3}. The doping level in SrTiO{sub 3} was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO{sub 3} provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Single crystal growth of pure and Nd-doped Y2O3 by flotating zone method with Xe arc lamp imaging furnace

International Nuclear Information System (INIS)

Tsuiki, H.; Kitazawa, K.; Fueki, K.; Masumoto, T.; Shiroki, K.

1980-01-01

Single crystals of undoped and Nd-doped yttrium oxide were grown by the floating zone method with a Xe arc lamp imaging furnace. The crystals were grown in the and directions. Transparent and subgrain-free single crystals were obtained at a growth rate of 30-60 mm/h for the undoped yttrium oxide. Facets of the cubic [100] and [211] were observed though the high temperature phase of the crystal is hexagonal. Dislocation densities of undoped yttrium oxide are given. (orig./WE)

Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki

2011-01-01

The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)