Bluish-green color emitting Ba2Si3O8:Eu2+ ceramic phosphors for white light-emitting diodes.

Science.gov (United States)

Xiao, F; Xue, Y N; Zhang, Q Y

2009-10-15

This paper reports on the structural and optical properties of Eu(2+) activated Ba(2)Si(3)O(8) ceramic phosphors synthesized by a sol-gel method. The ceramic phosphors have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and fluorescence measurements. The structural characterization results suggest that the as-prepared phosphors are of single phase monoclinic Ba(2)Si(3)O(8) with rod-like morphology. A broad excitation band ranging from 300 to 410 nm matches well with the ultraviolet (UV) radiation of light-emitting diodes (LEDs). Upon 380 nm UV light excitation, these phosphors emit bluish-green emission centered at 500 nm with color coordination (x=0.25, y=0.40). All the obtained results indicate that the Ba(2)Si(3)O(8):Eu(2+) ceramic phosphors are promising bluish-green candidates for the phosphor-converted white LEDs.

Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

International Nuclear Information System (INIS)

Lee, Ya-Ju; Chen, Yi-Ching; Lu, Tien-Chang

2011-01-01

The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

Single nanowire green InGaN/GaN light emitting diodes

Science.gov (United States)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Organic light emitting diode with light extracting electrode

Energy Technology Data Exchange (ETDEWEB)

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Song, Wook; Lee, Jun Yeob; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2018-02-01

A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light-emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole-type host and a triazine-type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light-emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light-emitting diodes.

Triphenylsilane-substituted arenes as host materials for use in green phosphorescent organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jwajin; Lee, Kum Hee; Kim, Young Seok; Lee, Hyun Woo [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Ho Won [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2016-03-15

We demonstrated triphenylsilane-substituted arenes (1–4) as host materials for green phosphorescent organic light-emitting diodes. Particularly, a device using 9,9-dimethyl-2-(triphenylsilyl)-7-[4-(triphenylsilyl)phenyl]-9H-fluorene (compound 4) as the host material with the green phosphorescence dopant bis[2-(1,1′,2′,1′′-terphen-3-yl)pyridinato-C,N]iridium(III) (acetylacetonate) showed the efficient green emission with an external quantum efficiency of 4.64%, a power efficiency of 7.2 lm/W and luminous efficiency of 16.6 cd/A at 20 mA/cm{sup 2}, respectively, with the Commission International de L’Eclairage chromaticity coordinates of (0.33, 0.59) at 8.0 V.

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

Science.gov (United States)

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

DEFF Research Database (Denmark)

Mesta, Murat; Carvelli, Marco; de Vries, Rein J

2013-01-01

we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

Light-emitting diodes - Their potential in biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

2010-10-15

The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin

2017-07-12

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021) substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

Science.gov (United States)

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

Science.gov (United States)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

International Nuclear Information System (INIS)

Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

2012-01-01

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

The effects of light-emitting diode lighting on greenhouse plant growth and quality

Directory of Open Access Journals (Sweden)

Margit Olle

2013-06-01

Full Text Available The aim of this study is to present the light emitting diode (LED technology for greenhouse plant lighting and to give an overview about LED light effects on photosynthetic indices, growth, yield and nutritional value in green vegetables and tomato, cucumber, sweet pepper transplants. The sole LED lighting, applied in closed growth chambers, as well as combinations of LED wavelengths with conventional light sources, fluorescent and high pressure sodium lamp light, and natural illumination in greenhouses are overviewed. Red and blue light are basal in the lighting spectra for green vegetables and tomato, cucumber, and pepper transplants; far red light, important for photomorphogenetic processes in plants also results in growth promotion. However, theoretically unprofitable spectral parts as green or yellow also have significant physiological effects on investigated plants. Presented results disclose the variability of light spectral effects on different plant species and different physiological indices.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

Electroluminescence dependence of the simplified green light organic light emitting diodes on in situ thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Mu, Haichuan, E-mail: hcmu@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Rao, Lu [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Li, Weiling; Wei, Bin [Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechanics Engineering and Automation, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Wang, Keke; Xie, Haifen [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China)

2015-12-01

Highlights: • In-situ thermal treating the organic tri-layer (CBP/CBP:Ir(ppy){sub 3}/TPBi) of the green light PHOLED under various temperatures during the organic materials evaporation. • Investigating the effect of in situ thermal treatment on the electroluminescence (EL) performance of the green light PHOLED with tri-layer structures. • Provide an easy and practical way to improve the EL performance of the OLEDs without major modification of the organic materials and OLEDs structures required. - Abstract: Simplified multilayer green light phosphorescent organic light emitting diodes (PHOLED) with the structure of ITO/MoO{sub 3}(1 nm)/CBP(20 nm)/CBP:Ir(ppy){sub 3} (1 wt%) (15 nm)/TPBi(60 nm)/LiF(0.5 nm)/Al were fabricated via thermal evaporation and in situ thermal treatment (heating the OLED substrates to certain temperatures during the thermal evaporation of the organic materials) was performed. The effect of the in situ thermal treatment on the electroluminescence (EL) performance of the PHOLED was investigated. It was found that the OLED exhibited strong EL dependence on the thermal treatment temperatures, and their current efficiency was improved with the increasing temperature from room temperature (RT) to 69 °C and deteriorated with the further increasing temperature to 105 °C. At the brightness of 1000 cd/m{sup 2}, over 80% improvement of the current efficiency at the optimal thermal treatment temperature of 69 °C (64 cd/A) was demonstrated compared to that at RT (35 cd/A). Meanwhile, the tremendous influences of the in situ thermal treatment on the morphology of the multilayer CBP/CBP:Ir(ppy){sub 3}/TPBi were also observed. At the optimal thermal treatment temperature of 69 °C, the improvement of the EL performance could be ascribed to the enhancement of the electron and hole transporting in the CBP:Ir(ppy){sub 3} emitting layer, which suppressed the triplets self-quenching interactions and promoted the charge balance and excitons formation. The

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

High efficient white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

2007-07-01

Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Optimization of emission color and efficiency of organic light emitting diodes for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany)

2008-07-01

In recent years the performance of organic light emitting diodes (OLEDs) has reached a level where OLED lighting presents an interesting application target. Research activities therefore focus amongst other things on the development of high efficient and stable white light emitting devices. We demonstrate how the color coordinates can be adjusted to achieve a warm white emission spectrum, whereas the OLED stack contains phosphorescent red and green dyes combined with a fluorescent blue one. Detailed results are presented with respect to a variation of layer thicknesses and dopant concentrations of the emission layers. Furthermore the influence of various dye molecules and hence different energy level alignments between host and dopants on color and efficiency will be discussed.

Coherence characteristics of light-emitting diodes

International Nuclear Information System (INIS)

Mehta, Dalip Singh; Saxena, Kanchan; Dubey, Satish Kumar; Shakher, Chandra

2010-01-01

We report the measurement of coherence characteristics of light-emitting diodes (LEDs). Experiments were performed using red and green color LEDs directly illuminating the Young's double slit kept in the far-zone. Fourier transform fringe analysis technique was used for the measurement of the visibility of interference fringes from which the modulus of degree of spectral coherence was determined. Low degree of spectral coherence, typically 0.4 for red and 0.2 for green LED with double-slit separation of 400 μm was observed. A variable slit was then kept in front of the LEDs and the double slit was illuminated with the light coming out of the slit. Experiments were performed with various slit sizes and the visibility of the interference fringes was observed. It was found that visibility of the interference fringes changes drastically in presence of variable slit kept in front of LEDs and a high degree of spectral coherence, typically 0.85 for red and 0.8 for green LED with double-slit separation of 400 μm and rectangular slit opening of 500 μm was observed. The experimental results are compared with the theoretical counterparts. Coherence lengths of both the LEDs were also determined and it was obtained 5.8±2 and 24±4 μm for green and red LEDs, respectively.

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

2016-01-01

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun

2016-08-16

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2010-07-01

The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

Science.gov (United States)

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Efficient hole injection in organic light-emitting diodes using polyvinylidenefluoride as an interlayer

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Soo Yook, Kyoung [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of); Lee, Jun Yeob, E-mail: leej17@dankook.ac.k [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of)

2010-10-15

The effect of the polyvinylidenefluoride (PVDF) interlayer on the hole injection and the device performances of the green phosphorescent organic light-emitting diodes (PHOLEDs) was investigated. The hole current density of the hole only device was improved and the power efficiency of the green PHOLEDs was enhanced from 10.5 to 12.5 lm/W by the PVDF interlayer. The reduction of the interfacial energy barrier was responsible for the high hole current density in the PVDF interlayer based green PHOLEDs.

Development and evaluation of a light-emitting diode endoscopic light source

Science.gov (United States)

Clancy, Neil T.; Li, Rui; Rogers, Kevin; Driscoll, Paul; Excel, Peter; Yandle, Ron; Hanna, George; Copner, Nigel; Elson, Daniel S.

2012-03-01

Light-emitting diode (LED) based endoscopic illumination devices have been shown to have several benefits over arclamp systems. LEDs are energy-efficient, small, durable, and inexpensive, however their use in endoscopy has been limited by the difficulty in efficiently coupling enough light into the endoscopic light cable. We have demonstrated a highly homogenised lightpipe LED light source that combines the light from four Luminus LEDs emitting in the red, green, blue and violet using innovative dichroics that maximise light throughput. The light source spectrally combines light from highly divergent incoherent sources that have a Lambertian intensity profile to provide illumination matched to the acceptance numerical aperture of a liquid light guide or fibre bundle. The LED light source was coupled to a standard laparoscope and performance parameters (power, luminance, colour temperature) compared to a xenon lamp. Although the total illuminance from the endoscope was lower, adjustment of the LEDs' relative intensities enabled contrast enhancement in biological tissue imaging. The LED light engine was also evaluated in a minimally invasive surgery (MIS) box trainer and in vivo during a porcine MIS procedure where it was used to generate 'narrowband' images. Future work using the violet LED could enable photodynamic diagnosis of bladder cancer.

Printable candlelight-style organic light-emitting diode

Science.gov (United States)

Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

2017-06-01

Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal

2016-10-11

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence

International Nuclear Information System (INIS)

Nishide, Jun-ichi; Hiraga, Yasuhide; Nakanotani, Hajime; Adachi, Chihaya

2014-01-01

White organic light-emitting diodes (WOLEDs) have attracted much attention recently, aimed for next-generation lighting sources because of their high potential to realize high electroluminescence efficiency, flexibility, and low-cost manufacture. Here, we demonstrate high-efficiency WOLED using red, green, and blue thermally activated delayed fluorescence materials as emissive dopants to generate white electroluminescence. The WOLED has a maximum external quantum efficiency of over 17% with Commission Internationale de l'Eclairage coordinates of (0.30, 0.38).

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Colour-tunable light-emitting diodes based on InP/GaP nanostructures

International Nuclear Information System (INIS)

Hatami, Fariba; Masselink, W Ted; Harris, James S

2006-01-01

We describe a novel colour-tunable light-emitting diode whose operation is based on direct band-gap emission from coupled configurations of InP quantum dots and quantum wells embedded in GaP. The control of the emission colour stems from a marked difference in the current dependence of intensities of two different emission processes. At lower currents, the emission is dominated by the 720 nm luminescence from the quantum dots and appears red; at higher currents, the emission is dominated by the 550 nm quantum-well luminescence and the perceived colour is green. Thus, we are able to tune the colour of such diodes from red to green by means of drive current. A multi-colour pixel can be realized by a single diode, with rapid switching between colour states to provide a range of colour mix

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

International Nuclear Information System (INIS)

Chang, Chi-Jung; Lai, Chun-Feng; Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung; Chang, Shinn-Jen

2015-01-01

By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Degradation of phosphorescent blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Steinbacher, Frank [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2009-07-01

Development of phosphorescent materials has significantly improved the efficiency of organic light-emitting diodes (OLEDs). By using efficient red, green and blue phosphorescent emitter materials high efficient white OLEDs can be achieved. However, due to low stability of blue phosphorescent materials the lifetime of phosphorescent white OLEDs remains an issue. As a result, degradation of blue phosphorescent materials needs to be further investigated and improved. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated. For investigation of degradation process the devices were stressed with electrical current and UV-light to study the impact of charge carriers as well as excitons and exciton-polaron quenching on the stability of the blue dye.

Efficient red, green, blue and white organic light-emitting diodes with same exciplex host

Science.gov (United States)

Chang, Chih-Hao; Wu, Szu-Wei; Huang, Chih-Wei; Hsieh, Chung-Tsung; Lin, Sung-En; Chen, Nien-Po; Chang, Hsin-Hua

2016-03-01

Recently, exciplex had drawn attention because of its potential for efficient electroluminescence or for use as a host in organic light-emitting diodes (OLEDs). In this study, four kinds of hole transport material/electron transport material combinations were examined to verify the formation of exciplex and the corresponding energy bandgaps. We successfully demonstrated that the combination of tris(4-carbazoyl-9-ylphenyl)amine (TCTA) and 3,5,3‧,5‧-tetra(m-pyrid-3-yl)phenyl[1,1‧]biphenyl (BP4mPy) could form a stable exciplex emission with an adequate energy gap. Using exciplex as a host in red, green, and blue phosphorescent OLEDs with an identical trilayer architecture enabled effective energy transfer from exciplex to emitters, achieving corresponding efficiencies of 8.8, 14.1, and 15.8%. A maximum efficiency of 11.3% and stable emission was obtained in white OLEDs.

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

InGaN/GaN light-emitting diode microwires of submillimeter length

Energy Technology Data Exchange (ETDEWEB)

Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru; Rodin, S. N.; Sakharov, A. V.; Lundina, E. Yu. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation); Zadiranov, Yu. M.; Troshkov, S. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Tsatsulnikov, A. F. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)

2017-01-15

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.

Background story of the invention of efficient blue InGaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Shuji [University of California, Santa Barbara, CA (United States)

2015-06-15

Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and white InGaN based light emitting diodes (LEDs) and blue laser diodes (LDs). His inventions made possible energy efficient, solid-state lighting systems and enabled the next generation of optical storage. Together with Isamu Akasaki and Hiroshi Amano, he is one of the three recipients of the 2014 Nobel Prize in Physics. In his Nobel lecture, Shuji Nakamura gives an overview of this research and the story of his inventions. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2017-01-01

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

BaZrO3 perovskite nanoparticles as emissive material for organic/inorganic hybrid light-emitting diodes

DEFF Research Database (Denmark)

Tamulevičius, S.; Ivaniuk, K.; Cherpak, V.

2017-01-01

In the present work we have demonstrated double-channel emission from organic exciplexes coupled to inorganic nanoparticles. The process is demonstrated by yellow-green emission in light-emitting diodes based on organic exciplexes hybridized with perovskite-type dispersed BaZrO3 nanoparticles...

Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

Science.gov (United States)

Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

2000-09-01

A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

DEFF Research Database (Denmark)

Fadil, Ahmed

This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs......-QW coupling does not necessarily lead to emission enhancement. The findings of this work show that the scattering and absorption properties of NPs play a crucial role in determining whether the implementation will improve or degrade the optical performance. By applying these principles, a novel design...

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

The effect of various microlens parameters such as diameter and area fraction on light-extraction efficiency was systematically studied. Improvement of 4% in extraction efficiency was obtained by employing it on white light emitting diode. The area fraction of microlenses was increased up to 0.34 by reducing the spin speed.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

Science.gov (United States)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

Science.gov (United States)

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Peretti, Jacques; Speck, James S.

2015-01-01

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high

Efficiency optimization of green phosphorescent organic light-emitting device

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Soo; Jeon, Woo Sik; Yu, Jae Hyung [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Pode, Ramchandra, E-mail: rbpode@khu.ac.k [Department of Physics, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Kwon, Jang Hyuk, E-mail: jhkwon@khu.ac.k [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of)

2011-03-01

Using a narrow band gap host of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp{sub 2}) and green phosphorescent Ir(ppy){sub 3} [fac-tris(2-phenylpyridine) iridium III] guest concentration as low as 2%, high efficiency phosphorescent organic light-emitting diode (PHOLED) is realized. Current and power efficiencies of 62.5 cd/A (max.), 51.0 lm/W (max.), and external quantum efficiency (max.) of 19.8% are reported in this green PHOLED. A low current efficiency roll-off value of 10% over the brightness of 10,000 cd/m{sup 2} is noticed in this Bepp{sub 2} single host device. Such a high efficiency is obtained by the optimization of the doping concentration with the knowledge of the hole trapping and the emission zone situations in this host-guest system. It is suggested that the reported device performance is suitable for applications in high brightness displays and lighting.

Plant experiments with light-emitting diode module in Svet space greenhouse

Science.gov (United States)

Ilieva, Iliyana; Ivanova, Tania; Naydenov, Yordan; Dandolov, Ivan; Stefanov, Detelin

Light is necessary for photosynthesis and shoot orientation in the space plant growth facilities. Light modules (LM) must provide sufficient photosynthetic photon flux for optimal efficiency of photosynthetic processes and also meet the constraints for power, volume and mass. A new LM for SVET Space Greenhouse using Cree R XLamp R 7090 XR light-emitting diodes (LEDs) is developed. Three types of monochromic LEDs emitting in the red, green, and blue region of the spectrum are used. The new LM contains 36 LED spots - 30 LED spots with one red, green and blue LED and 6 LED spots with three red LEDs. DMX programming device controls the LED spots and can set 231 levels of light intensity thus achieving Photosynthetic Photon Flux Density (PPFD) in the range 0-400 µmol.m-2 .s-1 and different percentages of the red, green and blue light, depending on the experimental objectives. Two one-month experiments with "salad-type" plants - lettuce and chicory were carried at 400 µmol.m-2 .s-1 PPFD (high light - HL) and 220 µmol.m-2 .s-1 PPFD (low light - LL) and composition 70% red, 20% green and 10% blue light. In vivo modulated chlorophyll fluorescence was measured by a PAM fluorometer on leaf discs and the following parameters: effective quantum yield of Photosystem II (ΦP SII ) and non-photochemical quenching (NPQ) were calculated. Both lettuce and chicory plants grown at LL express higher photochemical activity of Photosystem II (PSII) than HL grown plants, evaluated by the actual PSII quantum yield, ΦP SII . The calculated steady state NPQ values did not differ significantly in lettuce and chicory. The rapid phase of the NPQ increase was accelerated in all studied LL leaves. In conclusion low light conditions ensured more effective functioning of PSII than HL when lettuce and chicory plants were grown at 70% red, 20% green and 10% blue light composition.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

2018-02-02

Feb 2, 2018 ... emitting diode (OLED) can be enhanced by using light- extraction ... to grow, ω should posses a positive value, which is possible only when ∂φ/∂h < 0, .... To detect small changes, first, the source LED was sta- bilized by ...

Effects of doping parameters on the CIE value of flexible white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Juang Fuhshyang; Lin Mingyein; Yang Chanyi [Institute of Electro-Optical and Materials Science, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Tsai Yusheng [Department of Electro-Optics Engineering, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Lin, David [Windell Corporation, 1F, No. 9, Kung-Yen 7 Road, Industrial Zone, Taichung (Taiwan); Wang Wentunn; Shen Chaiyuan [Electronics Research and Service Organization, Industrial Technology Research Institute, 195 Chung Hsing Rd., Sec. 4 Chu Tung, Hsin Chu (Taiwan)

2004-09-01

Red dopants were doped in different emitters, blue and green, respectively, to fabricate white organic light emitting diodes on flexible substrates. The competitive emission between blue and red emitters with various doped-zones was studied. When the DCJT doped zone was located far away from the hole-injection layer, both the blue and red color can be emitted. An appropriate red-dopant position in the device enhanced the green emission from 8-hydroxyquinoline aluminum (Alq3) which was combined with the red and blue emission to generate a white light. Finally, a white emission with the CIE value, (0.30, 0.32), independent of the applied voltage, was obtained with the optimum doped width and location. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Non-doped-type white organic light-emitting diodes for lighting purpose

Energy Technology Data Exchange (ETDEWEB)

Zhu Jianzhuo [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Li Wenlian, E-mail: wllioel@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Chu Bei, E-mail: beichu@163.co [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Yan Fei; Yang Dongfang; Liu Huihui; Wang Junbo [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)

2010-05-15

We demonstrate a non-doped white organic light-emitting diode (WOLED) in which the blue-, green- and red-emissions are generated from 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl, tris(8-hydroxyquinoline)aluminum (Alq) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyl-julolidyl 9-enyl)-4H-pyran (DCJTB), which is used as an ultrathin layer. The DCJTB ultrathin layer plays the chromaticity tuning role in optimizing the white spectral band by modulating the location of the DCJTB ultrathin layer in the green emissive Alq layer. The optimized WOLED gives the Commission Internationale de l'Eclairage-1931 xy coordinates of (0.319, 0.335), a color rendering index of 91.2 at 10 V, a maximum brightness of 21010 cd/m{sup 2} at 12 V and a maximum current efficiency of 5.17 cd/A at 6.6 V. The electroluminescence mechanism of the white device is also discussed.

Synthesis and characterization of pure and Li⁺ activated Alq₃ complexes for green and blue organic light emitting diodes and display devices.

Science.gov (United States)

Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

2014-08-01

Pure and Li(+)-doped Alq3 complexes were synthesized by simple precipitation method at room temperature, maintaining the stoichiometric ratio. These complexes were characterized by X-ray diffraction, ultraviolet-visible absorption and Fourier transform infrared and photoluminescence (PL) spectra. X-ray diffraction analysis reveals the crystalline nature of the synthesized complexes, while Fourier transform infrared spectroscopy confirm the molecular structure, the completion of quinoline ring formation and presence of quinoline structure in the metal complex. Ultraviolet-visible and PL spectra revealed that Li(+) activated Alq3 complexes exhibit the highest intensity in comparison to pure Alq3 phosphor. Thus, Li(+) enhances PL emission intensity when doped into Alq3 phosphor. The excitation spectra lie in the range of 383-456 nm. All the synthesized complexes other than Liq give green emission, while Liq gives blue emission with enhanced intensity. Thus, he synthesized phosphors are the best suitable candidates for green- and blue-emitting organic light emitting diode, PL liquid-crystal display and solid-state lighting applications. Copyright © 2013 John Wiley & Sons, Ltd.

Characteristics of organic light emitting diodes with copper iodide as injection layer

Energy Technology Data Exchange (ETDEWEB)

Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2010-09-30

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

Ultrapure Green Light-Emitting Diodes Using Two-Dimensional Formamidinium Perovskites: Achieving Recommendation 2020 Color Coordinates.

Science.gov (United States)

Kumar, Sudhir; Jagielski, Jakub; Kallikounis, Nikolaos; Kim, Young-Hoon; Wolf, Christoph; Jenny, Florian; Tian, Tian; Hofer, Corinne J; Chiu, Yu-Cheng; Stark, Wendelin J; Lee, Tae-Woo; Shih, Chih-Jen

2017-09-13

Pure green light-emitting diodes (LEDs) are essential for realizing an ultrawide color gamut in next-generation displays, as is defined by the recommendation (Rec.) 2020 standard. However, because the human eye is more sensitive to the green spectral region, it is not yet possible to achieve an ultrapure green electroluminescence (EL) with a sufficiently narrow bandwidth that covers >95% of the Rec. 2020 standard in the CIE 1931 color space. Here, we demonstrate efficient, ultrapure green EL based on the colloidal two-dimensional (2D) formamidinium lead bromide (FAPbBr 3 ) hybrid perovskites. Through the dielectric quantum well (DQW) engineering, the quantum-confined 2D FAPbBr 3 perovskites exhibit a high exciton binding energy of 162 meV, resulting in a high photoluminescence quantum yield (PLQY) of ∼92% in the spin-coated films. Our optimized LED devices show a maximum current efficiency (η CE ) of 13.02 cd A -1 and the CIE 1931 color coordinates of (0.168, 0.773). The color gamut covers 97% and 99% of the Rec. 2020 standard in the CIE 1931 and the CIE 1976 color space, respectively, representing the "greenest" LEDs ever reported. Moreover, the device shows only a ∼10% roll-off in η CE (11.3 cd A -1 ) at 1000 cd m -2 . We further demonstrate large-area (3 cm 2 ) and ultraflexible (bending radius of 2 mm) LEDs based on 2D perovskites.

White organic light emitting diodes based on fluorene-carbazole dendrimers

International Nuclear Information System (INIS)

Usluer, Özlem; Demic, Serafettin; Kus, Mahmut; Özel, Faruk; Serdar Sariciftci, Niyazi

2014-01-01

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m 2 and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Directory of Open Access Journals (Sweden)

O. M. Hontaruk

2015-04-01

Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

Non-doped white organic light-emitting diodes based on aggregation-induced emission

Energy Technology Data Exchange (ETDEWEB)

Chen Shuming; Kwok, Hoi Sing [Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Zhao Zujin; Tang, Ben Zhong, E-mail: eekwok@ust.h [Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2010-03-10

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A{sup -1}, 4 lm W{sup -1} and brightness of 18 000 cd m{sup -2} have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Non-doped white organic light-emitting diodes based on aggregation-induced emission

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi Sing; Zhao Zujin; Tang, Ben Zhong

2010-01-01

Non-doped white organic light-emitting diodes (WOLEDs) based on newly synthesized bluish-green light-emitting material 1,3,6,8-tetrakis [4-(1,2,2-triphenylvinyl)phenyl]pyrene (TTPEPy) and red light-emitting material 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl) phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (BTPETTD) have been demonstrated. A maximum efficiency of 7.4 cd A -1 , 4 lm W -1 and brightness of 18 000 cd m -2 have been achieved by employing 3 nm thick 4, 4'-bis [N-(1-naphthyl-1-)-N-phenyl-amino]- biphenyl (NPB) as an electron-blocking layer. The WOLEDs exhibit a high colour rendering index of 90 and moderate colour stability with 1931 Commision International de L'Eclairage coordinates changing from (0.41, 0.41) to (0.38, 0.40) over a wide range of driving voltages. Moreover, the non-doped WOLEDs enjoy a reduced efficiency roll-off due to their nature of aggregation-induced emission.

Energy down converting organic fluorophore functionalized mesoporous silica hybrids for monolith-coated light emitting diodes

Directory of Open Access Journals (Sweden)

Markus Börgardts

2017-04-01

Full Text Available The covalent attachment of organic fluorophores in mesoporous silica matrices for usage as energy down converting phosphors without employing inorganic transition or rare earth metals is reported in this article. Triethoxysilylpropyl-substituted derivatives of the blue emitting perylene, green emitting benzofurazane, and red emitting Nile red were synthesized and applied in the synthesis of mesoporous hybrid materials by postsynthetic grafting to commercially available MCM-41. These individually dye-functionalized hybrid materials are mixed in variable ratios to furnish a powder capable of emitting white light with CIE chromaticity coordinates of x = 0.33, y = 0.33 and an external quantum yield of 4.6% upon irradiation at 410 nm. Furthermore, as a proof of concept two different device setups of commercially available UV light emitting diodes, are coated with silica monoliths containing the three triethoxysilylpropyl-substituted fluorophore derivatives. These coatings are able to convert the emitted UV light into light with correlated color temperatures of very cold white (41100 K, 10700 K as well as a greenish white emission with correlated color temperatures of about 5500 K.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Fabrication of organic light emitting diode using Molybdenum ...

Indian Academy of Sciences (India)

65

out by measuring sheet resistance, optical transmittance and surface ... role in the organic light-emitting diode (OLED) performance because it determines the .... coated glass by thermal vacuum deposition method and optimize it by using ...

Light emission mechanism of mixed host organic light-emitting diodes

Science.gov (United States)

Song, Wook; Lee, Jun Yeob

2015-03-01

Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

A simple and portable colorimeter using a red-green-blue light-emitting diode and its application to the on-site determination of nitrite and iron in river-water.

Science.gov (United States)

Suzuki, Yasutada; Aruga, Terutomi; Kuwahara, Hiroyuki; Kitamura, Miki; Kuwabara, Tetsuo; Kawakubo, Susumu; Iwatsuki, Masaaki

2004-06-01

A portable colorimeter using a red-green-blue light-emitting diode as a light source has been developed. An embedded controller sequentially turns emitters on and off, and acquires the signals detected by two photo diodes synchronized with their blinking. The controller calculates the absorbance and displays it on a liquid-crystal display. The whole system, including a 006P dry cell, is contained in a 100 x 70 x 50 mm aluminum case and its mass is 280 g. This colorimeter was successfully applied to the on-site determination of nitrite and iron in river-water.

Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

International Nuclear Information System (INIS)

Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung; Shim, Jong-In

2014-01-01

Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves

White organic light emitting diodes based on fluorene-carbazole dendrimers

Energy Technology Data Exchange (ETDEWEB)

Usluer, Özlem, E-mail: usluerozlem@yahoo.com.tr [Department of Chemistry, Muğla Sıtkı Koçman University, 48000 Muğla (Turkey); Demic, Serafettin [Department of Materials Science and Engineering, Izmir Katip Çelebi University, 35620 Çiğli, Izmir (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Özel, Faruk [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Serdar Sariciftci, Niyazi [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)

2014-02-15

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m{sup 2} and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

International Nuclear Information System (INIS)

Fei-Peng, Chen; Bin, Xu; Wen-Jing, Tian; Zu-Jin, Zhao; Ping, Lü; Chan, Im

2010-01-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq 3 )/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m 2 . The investigation reveals that the white light is composed of a blue–green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

Science.gov (United States)

Chen, Fei-Peng; Xu, Bin; Zhao, Zu-Jin; Tian, Wen-Jing; Lü, Ping; Im, Chan

2010-03-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq3)/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films.

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

Science.gov (United States)

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

Quantitative description of charge-carrier transport in a white organic light-emitting diode

Science.gov (United States)

Schober, M.; Anderson, M.; Thomschke, M.; Widmer, J.; Furno, M.; Scholz, R.; Lüssem, B.; Leo, K.

2011-10-01

We present a simulation model for the analysis of charge-carrier transport in organic thin-film devices, and apply it to a three-color white hybrid organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emission. We simulate a series of single-carrier devices, which reconstruct the OLED layer sequence step by step. Thereby, we determine the energy profiles for hole and electron transport, show how to discern bulk from interface limitation, and identify trap states.

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

2011-01-01

peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow...

Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications.

Science.gov (United States)

Page, Zachariah A; Narupai, Benjaporn; Pester, Christian W; Bou Zerdan, Raghida; Sokolov, Anatoliy; Laitar, David S; Mukhopadhyay, Sukrit; Sprague, Scott; McGrath, Alaina J; Kramer, John W; Trefonas, Peter; Hawker, Craig J

2017-06-28

A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red-green-blue arrays to yield white emission.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

Science.gov (United States)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology

Fluorescence lifetime imaging using light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

2008-05-07

We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

Energy Technology Data Exchange (ETDEWEB)

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

2015-07-27

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Science.gov (United States)

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Directory of Open Access Journals (Sweden)

Hsu Chih-Neng

2013-01-01

Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

Spectral effects of light-emitting diodes on plant growth and development: The importance of green and blue light

Science.gov (United States)

Cope, K. R.; Bugbee, B.

2011-12-01

Light-emitting diodes (LEDs) are an emerging technology for plant growth lighting. Due to their narrow spectral output, colored LEDs provide many options for studying the spectral effects of light on plants. Early on, efficient red LEDs were the primary focus of photobiological research; however, subsequent studies have shown that normal plant growth and development cannot be achieved under red light without blue light supplementation. More recent studies have shown that red and blue (RB) LEDs supplemented with green light increase plant dry mass. This is because green light transmits more effectively through the leaf canopy than red and blue light, thus illuminating lower plant leaves and increasing whole-plant photosynthesis. Red, green and blue (RGB) light can be provided by either a conventional white light source (such as fluorescent lights), a combination of RGB LEDs, or from recently developed white LEDs. White LEDs exceed the efficiency of fluorescent lights and have a comparable broad spectrum. As such, they have the potential to replace fluorescent lighting for growth-chamber-based crop production both on Earth and in space. Here we report the results of studies on the effects of three white LED types (warm, neutral and cool) on plant growth and development compared to combinations of RB and RGB LEDs. Plants were grown under two constant light intensities (200 and 500 μmol m-2 s-1). Temperature, environmental conditions and root-zone environment were uniformly maintained across treatments. Phytochrome photoequilbria and red/far-red ratios were similar among treatments and were comparable to conventional fluorescent lights. Blue light had a significant effect on both plant growth (dry mass gain) and development (dry mass partitioning). An increase in the absolute amount (μmol m-2 s-1) of blue light from 0-80 μmol m-2 s-1 resulted in a decrease in stem elongation, independent of the light intensity. However, an increase in the relative amount (%) of blue

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

International Nuclear Information System (INIS)

Lau, K.-T.; McHugh, Eimear; Baldwin, Susan; Diamond, Dermot

2006-01-01

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate

Paired emitter-detector light emitting diodes for the measurement of lead(II) and cadmium(II)

Energy Technology Data Exchange (ETDEWEB)

Lau, K.-T. [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: kim.lau@dcu.ie; McHugh, Eimear [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Baldwin, Susan [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland); Diamond, Dermot [Adaptive Sensors Group, National Centre for Sensor Research, School of Chemical Sciences, Dublin City University, Dublin 9 (Ireland)]. E-mail: Dermot.diamond@dcu.ie

2006-05-31

A transmittance mode optical device based on using a reverse biased light emitting diode (LED) as light detector has been developed for colorimetric analysis. This new optical device was validated with bromocresol green dye for absorbance measurements before being employed for detecting cadmium(II) and lead(II) in water. Results show that the performance of this LED-based device is comparable to much more expensive bench top UV-vis instruments, but with the advantages of being low cost, low power and simple to operate.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

Science.gov (United States)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

Science.gov (United States)

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

Science.gov (United States)

Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

2018-03-01

Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Directory of Open Access Journals (Sweden)

M.R. Philip

2017-06-01

Full Text Available We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111 by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40% internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.

Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability

Energy Technology Data Exchange (ETDEWEB)

Wang, Qi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Ma, Dongge, E-mail: mdg1014@ciac.jl.cn; Ding, Junqiao; Wang, Lixiang [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Leo, Karl [Tech. Univ. Dresden, Inst. Angew. Photophys., D-01062 Dresden (Germany); Qiao, Qiquan [Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Jia, Huiping; Gnade, Bruce E. [Department of Materials Science and Engineering and Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, Texas 75083 (United States)

2014-05-12

An efficient phosphorescent white organic light emitting-diode with a red-green-blue tri-emitting-layer structure is reported. The host of the red dopant possesses a lower triplet-energy than the green dye. An interlayer step-wise triplet transfer via blue dye → green dye → red host → red dye is achieved. This mechanism allows an efficient triplet harvesting by the three dopants, thus maintaining a balanced white light and reducing energy loss. Moreover, the color stability of the device is improved significantly. The white device not only achieves a peak external quantum efficiency of 21.1 ± 0.8% and power efficiency of 37.5 ± 1.4 lm/W but shows no color shift over a wide range of voltages.

Tuning the colour of white polymer light emitting diodes

NARCIS (Netherlands)

Kok, M.M. de; Sarfert, W.; Paetzold, R.

2010-01-01

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Energy Technology Data Exchange (ETDEWEB)

Massabuau, F. C.-P., E-mail: fm350@cam.ac.uk; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Materials Science and Metallurgy, University of Cambridge, 22 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Davies, M. J.; Dawson, P. [Photon Science Institute, School of Physics and Astronomy, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kovács, A.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Leo-Brandt- Straße, D-52425 Jülich (Germany); Williams, T.; Etheridge, J. [Monash Centre for Electron Microscopy, Monash University, Clayton Campus, VIC 3800 (Australia); Hopkins, M. A.; Allsopp, D. W. E. [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

2014-09-15

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

International Nuclear Information System (INIS)

Massabuau, F. C.-P.; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.; Davies, M. J.; Dawson, P.; Kovács, A.; Dunin-Borkowski, R. E.; Williams, T.; Etheridge, J.; Hopkins, M. A.; Allsopp, D. W. E.

2014-01-01

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

Efficient polymer white-light-emitting diodes with a single-emission layer of fluorescent polymer blend

International Nuclear Information System (INIS)

Niu Qiaoli; Xu Yunhua; Jiang Jiaxing; Peng Junbiao; Cao Yong

2007-01-01

Efficient polymer white-light-emitting diodes (WPLEDs) have been fabricated with a single layer of fluorescent polymer blend. The device structure consists of ITO/PEDOT/PVK/emissive layer/Ba/Al. The emissive layer is a blend of poly(9,9-dioctylfluorene) (PFO), phenyl-substituted PPV derivative (P-PPV) and a copolymer of 9,9-dioctylfluorene and 4,7-di(4-hexylthien-2-yl)-2,1,3-benzothiadiazole (PFO-DHTBT), which, respectively, emits blue, green and red light. The emission of pure and efficient white light was implemented by tuning the blend weight ratio of PFO: P-PPV: PFO-DHTBT to 96:4:0.4. The maximum current efficiency and luminance are, respectively, 7.6 cd/A at 6.7 V and 11930 cd/m 2 at 11.2 V. The CIE coordinates of white-light emission were stable with the drive voltages

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

Science.gov (United States)

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light emitting diodes for today's energy conscious world

Energy Technology Data Exchange (ETDEWEB)

Papanier, J

2000-10-01

The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

OpenAIRE

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from lo...

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Influence of Green, Red and Blue Light Emitting Diodes on Multiprotein Complex Proteins and Photosynthetic Activity under Different Light Intensities in Lettuce Leaves (Lactuca sativa L.

Directory of Open Access Journals (Sweden)

Sowbiya Muneer

2014-03-01

Full Text Available The objective of this study was to investigate the response of light emitting diodes (LEDs at different light intensities (70 and 80 for green LEDs, 88 and 238 for red LEDs and 80 and 238 μmol m−2 s−1 for blue LEDs at three wavelengths in lettuce leaves. Lettuce leaves were exposed to (522 nm, red (639 nm and blue (470 nm LEDs of different light intensities. Thylakoid multiprotein complex proteins and photosynthetic metabolism were then investigated. Biomass and photosynthetic parameters increased with an increasing light intensity under blue LED illumination and decreased when illuminated with red and green LEDs with decreased light intensity. The expression of multiprotein complex proteins including PSII-core dimer and PSII-core monomer using blue LEDs illumination was higher at higher light intensity (238 μmol m−2 s−1 and was lowered with decreased light intensity (70–80 μmol m−2 s−1. The responses of chloroplast sub-compartment proteins, including those active in stomatal opening and closing, and leaf physiological responses at different light intensities, indicated induced growth enhancement upon illumination with blue LEDs. High intensity blue LEDs promote plant growth by controlling the integrity of chloroplast proteins that optimize photosynthetic performance in the natural environment.

Study of photophysical processes in organic light-emitting diodes based on light-emission profile reconstruction

NARCIS (Netherlands)

Carvelli, M.

2012-01-01

Organic light-emitting diodes (OLEDs) are emerging as a promising option for energy-efficient, flexible light sources. A key factor that needs to be measured and controlled is the shape of the emission profile, i.e. the spatial distribution of the emitting excitons across the active layer thickness.

Organic Light-Emitting Diodes Using Multifunctional Phosphorescent Dendrimers with Iridium-Complex Core and Charge-Transporting Dendrons

Science.gov (United States)

Tsuzuki, Toshimitsu; Shirasawa, Nobuhiko; Suzuki, Toshiyasu; Tokito, Shizuo

2005-06-01

We report a novel class of light-emitting materials for use in organic light-emitting diodes (OLEDs): multifunctional phosphorescent dendrimers that have a phosphorescent core and dendrons based on charge-transporting building blocks. We synthesized first-generation and second-generation dendrimers consisting of a fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] core and hole-transporting phenylcarbazole-based dendrons. Smooth amorphous films of these dendrimers were formed by spin-coating them from solutions. The OLEDs using the dendrimer exhibited bright green or yellowish-green emission from the Ir(ppy)3 core. The OLEDs using the film containing a mixture of the dendrimer and an electron-transporting material exhibited higher efficiency than those using the neat dendrimer film. The external quantum efficiency of OLEDs using the film containing a mixture of the first-generation dendrimer and an electron-transporting material was as high as 7.6%.

A comparison of commercial light-emitting diode baited suction traps for surveillance of Culicoides in northern Europe.

Science.gov (United States)

Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon

2015-04-22

The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many

Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

International Nuclear Information System (INIS)

Baik, K.H.; Pearton, S.J.

2009-01-01

The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Synthesis and characterization of yellow and green light emitting novel polymers containing carbazole and electroactive moieties

International Nuclear Information System (INIS)

Aydın, Aysel; Kaya, İsmet

2012-01-01

Graphical abstract: The homopolymer of 1,5-bis(3,6-di(thiophen-3-yl)-9H-carbazol-9-yl)pentane and the copolymer with EDOT of 1,2-bis(2-(3,6-di(thiophen-3-yl)-9H-carbazol-9-yl)ethoxy)ethane were synthesized via electrochemical reaction on indium tin oxide (ITO)-coated glass plate. The obtained polymeric compounds were investigated as fluorescence properties in solution form. The synthesized polymers showed good fluorescence property indicating tunable light emission with green and yellow colors. This shows that these polymers could be used in production of new polymeric light emitting diodes (PLED)s for green and yellow color emissions. - Abstract: The compounds 1,5-bis(3,6-di(thiophen-3-yl)-9H-carbazol-9-yl)pentane (B1) and 1,2-bis(2-(3,6-di(thiophen-3-yl)-9H-carbazol-9-yl)ethoxy)ethane (B2) were synthesized via Ullmann and Suzuki couplings. Additionally, the homopolymers and copolymers of these compounds with 3,4-ethylenedioxythiophene (EDOT) and thiophene (Th) were synthesized and coated onto an ITO-glass surface via electrochemical oxidative polymerization. The spectroelectrochemical and electrochromic properties of these compounds were also investigated. The switching ability of these polymers was measured as the percent transmittance (%T) at their point of maximum contrast. The solid state electrical conductivities of the polymeric films coated onto the ITO-glass surface were measured via the four point probe technique using an electrometer. The compounds were characterized by FT-IR and NMR, and their thermal stabilities were determined via TG measurements. Fluorescence measurements were performed using DMSO solutions, and the synthesized polymers emitted both green and yellow colors based on the tuning of the excitation wavelength, which indicates that these polymers could be used to produce new polymeric light emitting diodes (PLEDs) with green and yellow emissions.

Efficient green phosphorescent tandem organic light emitting diodes with solution processable mixed hosts charge generating layer

Energy Technology Data Exchange (ETDEWEB)

Talik, N.A.; Yeoh, K.H.; Ng, C.Y.B [Low Dimensional Research Center, Department of Physics, University Malaya, 50603 Kuala Lumpur (Malaysia); ItraMAS Corporation. Sdn. Bhd., 542A-B Mukim 1, Lorong Perusahaan Baru 2, Kawasan Perindustrian, Perai 13600, Penang (Malaysia); Yap, B.K. [Center of Microelectronic and Nanotechnology Engineering (CeMNE), College of Engineering, Universiti Tenaga Nasional, Jln. Uniten-Ikram, 4300 Kajang, Selangor (Malaysia); Woon, K.L., E-mail: ph7klw76@um.edu.my [Low Dimensional Research Center, Department of Physics, University Malaya, 50603 Kuala Lumpur (Malaysia)

2014-10-15

A novel solution processable charge generating layer (CGL) that consists of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN{sub 6})/Poly(N-vinylcarbazole) (PVK): 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC) for a tandem green phosphorescent organic light emitting diode (PHOLED) is demonstrated. The use of orthogonal solvent to dissolve HATCN{sub 6} and PVK:TAPC is the key to overcome the interface erosion problem for the solution processed CGL. The current efficiency of the 2 wt% TAPC mixed with PVK is the highest at 24.2 cd/A, which is more than three-folds higher than that of the single device at 1000 cd/m{sup 2}. - Highlights: • A solution processable tandem OLED is built using a novel charge generating layer. • HATCN{sub 6} and PVK:TAPC are shown to be effective charge generating layers. • The turn on voltages for tandem devices are almost similar to single unit. • 2 wt% TAPC blended with PVK exhibits three-folds increase in efficiency.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

KAUST Repository

Prabaswara, Aditya

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Organic light-emitting diodes using novel embedded al gird transparent electrodes

Science.gov (United States)

Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

2017-03-01

This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

Color Rendering Index Thermal Stability Improvement of Glass-Based Phosphor-Converted White Light-Emitting Diodes for Solid-State Lighting

Directory of Open Access Journals (Sweden)

Chun-Chin Tsai

2014-01-01

Full Text Available High color rendering index performance has been required for phosphor-converted warm-white light-emitting diodes (PC-WWLEDs in lighting industry. The characteristics of low-temperature fabricated phosphor (yellow: Ce3+:YAG, green: Tb3+:YAG, and red: CaAlClSiN3:Eu2+ doped glass were presented for applications to high color rendering index warm-white-light-emitting diodes. Color coordinates (x, y = (0.36, 0.29, quantum yield (QY = 55.6%, color rending index (CRI = 85.3, and correlated color temperature (CCT = 3923 K were characterized. Glass-based PC-WWLEDs was found able to maintain good thermal stability for long-time high-temperature operation. QY decay, CRI remenance, and chromaticity shift were also analyzed for glass- and silicone-based high-power PC-WLEDs by thermal aging at 150°C and 250°C for industrial test standard’s aging time 1008 hours. Better than the silicone’s, thermal stability of glass-based PC-WLEDs has been improved. The resulted high color rendering index (CRI glass phosphor potentially can be used as a phosphor layer for high-performance and low-cost PC-WLEDs used in next-generation indoor solid-state lighting applications.

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Safety of light emitting diodes in toys.

Science.gov (United States)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Safety of light emitting diodes in toys

International Nuclear Information System (INIS)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-01-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

Science.gov (United States)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

White organic light-emitting diodes from three emitter layers

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lim, J.T. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Jeong, C.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lee, J.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of)]. E-mail: gyyeom@skku.edu

2006-11-23

Three-wavelength white organic light-emitting diodes (WOLEDs) were fabricated using two doped layers, which were obtained by separating the recombination zones into three emitter layers. A sky blue emission originated from the 4,4'-bis(2,2'-diphenylethen-1-yl)biphenyl (DPVBi) layer. A green emission originated from a tris(8-quinolinolato)aluminum (III) (Alq{sub 3}) host doped with a green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1] benz opyrano [6,7,8-ij]-quinolizin-11-one (C545T) dye. An orange emission was obtained from the N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) host doped with a red fluorescent dye, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 H-pyran (DCJTB). A white light resulted from the partial excitations of these three emitter layers by controlling the layer thickness and concentration of the fluorescent dyes in each emissive layer simultaneously. The electroluminescent spectrum of the device was not sensitive to the driving voltage of the device. The white light device showed a maximum luminance of approximately 53,000 cd/m{sup 2}. The external quantum and power efficiency at a luminance of approximately 100 cd/m{sup 2} were 2.62% and 3.04 lm/W, respectively.

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo

2010-01-26

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

Liquid metals as electrodes in polymer light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Gommans, H.H.P.; Denier van der Gon, A.W.; Brongersma, H.H.

2003-01-01

We demonstrate that liquid metals can be used as cathodes in light emitting diodes (pLEDs). The main difference between the use of liquid cathodes and evaporated cathodes is the sharpness of the metal–polymer interface. Liquid metal cathodes result in significantly sharper metal–organic interfaces

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

2010-01-01

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

Organic light emitting diodes on ITO-free polymer anodes

Energy Technology Data Exchange (ETDEWEB)

Fehse, Karsten; Schwartz, Gregor; Walzer, Karsten; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden, D-01062 Dresden (Germany)

2007-07-01

The high material cost of indium, being the main component of the commonly used indium-tin-oxide anodes (ITO) in organic light emitting diodes (OLEDs), is an obstacle for the production of efficient low-cost OLEDs. Therefore, new anode materials are needed for large scale OLED production. Recently, we demonstrated that the polymer PEDOT:PSS can substitute ITO as anode. Another highly conductive polymer is polyaniline (PANI) that provides 200 S/cm with a work function of 4.8 eV. In this study, we use PANI as anode for OLEDs (without ITO layer underneath the polymer) with electrically doped hole- and electron transport layers and intrinsic materials in between. Fluorescent blue (Spiro-DPVBi) as well as phosphorescent green (Ir(ppy){sub 3}) and red emitters (Ir(MDQ){sub 2}(acac)) were used for single colour and white OLEDs. Green single and double emission OLEDs achieve device efficiencies of 34 lm/W and 40.7 lm/W, respectively. The white OLED shows a power efficiency of 8.9 lm/W at 1000 cd/m{sup 2} with CIE coordinates of (0.42/0.39).

Numerical analysis of the electrical and the optical properties of green phosphorescent organic light-emitting diodes

International Nuclear Information System (INIS)

Hwang, Young Wook; Lee, Hyeon Gi; Won, Tae Young

2014-01-01

In this paper, we report a theoretical study on the electrical-optical properties of phosphorescent organic light-emitting diodes (PHOLEDs). Our simulation reveals that the refractive index of each material plays a crucial role in the emission characteristics and that the barrier height at the interface significantly influences the behavior of charge transport as well as the generation of excitons. The calculated transient profiles indicate that the carrier recombination in the PHOLEDs takes place mainly at the interface between the emitting layer and the hole transport layer after 8 μs. In the case of high index of refraction, the simulation result via modal analysis implies a possibility for improving the light extraction by increasing the substrate mode. As the thickness of each layer has been altered, we observe that the chromaticity of the device changes periodically.

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light‐Emitting Diodes

Science.gov (United States)

Song, Wook; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2017-01-01

Abstract A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light‐emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole‐type host and a triazine‐type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light‐emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light‐emitting diodes. PMID:29610726

Optical design of adjustable light emitting diode for different lighting requirements

International Nuclear Information System (INIS)

Lu Jia-Ning; Yu Jie; Tong Yu-Zhen; Zhang Guo-Yi

2012-01-01

Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

Science.gov (United States)

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

International Nuclear Information System (INIS)

Xu, Bing; Zhao, Jun Liang; Dai, Hai Tao; Wang, Shu Guo; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Sun, Xiao Wei

2014-01-01

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing; Zhao, Jun Liang [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Dai, Hai Tao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Wang, Shu Guo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Chu, Fu-Chuan; Huang, Chou-Hsiung [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Yu, Sheng-Fu [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Sun, Xiao Wei, E-mail: xwsun@sustc.edu.cn [South University of Science and Technology of China, Shenzhen, Guangdong (China)

2014-01-31

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery

Science.gov (United States)

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-10-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate

International Nuclear Information System (INIS)

Ryu, Gi-Seong; Choe, Ki-Beom; Song, Chung-Kun

2006-01-01

In order to demonstrate the possible application of an organic thin film transistor (OTFT) to a flexible active matrix organic light emitting diode (OLED) an array of 64 x 64 pixels was fabricated on a 4-in. size poly-ethylene-terephehalate substrate. Each pixel was composed of one OTFT integrated with one OLED. OTFTs successfully drove OLEDs by varying current in a wide range and some images were displayed on the array by emitting green light. The OTFTs used poly(4-vinylphenol) for the gate and pentacene for the semiconductor taking account compatibility with the PET substrate. The average mobility in the array was 0.2 cm 2 /V.s, which was reduced from 1.0 cm 2 /V.s in a single OTFT, and its variation over the entire substrate was 10%

Efficient light harvesting from flexible perovskite solar cells under indoor white light-emitting diode illumination

NARCIS (Netherlands)

Lucarelli, G.; Di Giacomo, F.; Zardetto, V.; Creatore, M.; Brown, T.M.

2017-01-01

This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode (LED) lamp as a light source at 200 and 400 lx, values typically found in indoor environments. Flexible cells were developed using either

Atom probe tomography of a commercial light emitting diode

International Nuclear Information System (INIS)

Larson, D J; Prosa, T J; Olson, D; Lawrence, D; Clifton, P H; Kelly, T F; Lefebvre, W

2013-01-01

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device

Effects of light emitting diode irradiation on neural differentiation of human umbilical cord-derived mesenchymal cells.

Science.gov (United States)

Dehghani-Soltani, Samereh; Shojaee, Mohammad; Jalalkamali, Mahshid; Babaee, Abdolreza; Nematollahi-Mahani, Seyed Noureddin

2017-08-30

Recently, light emitting diodes (LEDs) have been introduced as a potential physical factor for proliferation and differentiation of various stem cells. Among the mesenchymal stem cells human umbilical cord matrix-derived mesenchymal (hUCM) cells are easily propagated in the laboratory and their low immunogenicity make them more appropriate for regenerative medicine procedures. We aimed at this study to evaluate the effect of red and green light emitted from LED on the neural lineage differentiation of hUCM cells in the presence or absence of retinoic acid (RA). Harvested hUCM cells exhibited mesenchymal and stemness properties. Irradiation of these cells by green and red LED with or without RA pre-treatment successfully differentiated them into neural lineage when the morphology of the induced cells, gene expression pattern (nestin, β-tubulin III and Olig2) and protein synthesis (anti-nestin, anti-β-tubulin III, anti-GFAP and anti-O4 antibodies) was evaluated. These data point for the first time to the fact that LED irradiation and optogenetic technology may be applied for neural differentiation and neuronal repair in regenerative medicine.

Note: A flexible light emitting diode-based broadband transient-absorption spectrometer

Science.gov (United States)

Gottlieb, Sean M.; Corley, Scott C.; Madsen, Dorte; Larsen, Delmar S.

2012-05-01

This Note presents a simple and flexible ns-to-ms transient absorption spectrometer based on pulsed light emitting diode (LED) technology that can be incorporated into existing ultrafast transient absorption spectrometers or operate as a stand-alone instrument with fixed-wavelength laser sources. The LED probe pulses from this instrument exhibit excellent stability (˜0.5%) and are capable of producing high signal-to-noise long-time (>100 ns) transient absorption signals either in a broadband multiplexed (spanning 250 nm) or in tunable narrowband (20 ns) operation. The utility of the instrument is demonstrated by measuring the photoinduced ns-to-ms photodynamics of the red/green absorbing fourth GMP phosphodiesterase/adenylyl cyclase/FhlA domain of the NpR6012 locus of the nitrogen-fixing cyanobacterium Nostoc punctiforme.

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Kai-Chiang Hsu

2015-11-01

Full Text Available This paper addressed the effect of post-annealed treatment on the electroluminescence (EL of an n-ZnO/p-GaN heterojunction light-emitting diode (LED. The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

Science.gov (United States)

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Investigation of organic light emitting diodes for interferometric purposes

Science.gov (United States)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

Science.gov (United States)

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-10-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration.

Luminescence properties of Ca2 Ga2 SiO7 :RE phosphors for UV white-light-emitting diodes.

Science.gov (United States)

Jiao, Mengmeng; Lv, Wenzhen; Lü, Wei; Zhao, Qi; Shao, Baiqi; You, Hongpeng

2015-03-16

A series of Eu(2+) -, Ce(3+) -, and Tb(3+) -doped Ca2 Ga2 SiO7 phosphors is synthesized by using a high-temperature solid-state reaction. The powder X-ray diffraction and structure refinement data indicate that our prepared phosphors are single phased and the phosphor crystalizes in a tetrahedral system with the ${P\\bar 42m}$ (113) space group. The Eu(2+) - and Ce(3+) -doped phosphors both have broad excitation bands, which match well with the UV light-emitting diodes chips. Under irradiation of λ=350 nm, Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) have green and blue emissions, respectively. Luminescence of Ca2 Ga2 SiO7 :Tb(3+) , Li(+) phosphor varies with the different Tb(3+) contents. The thermal stability and energy-migration mechanism of Ca2 Ga2 SiO7 :Eu(2+) are also studied. The investigation results indicate that the prepared Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) samples show potential as green and blue phosphors, respectively, for UV-excited white-light-emitting diodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Boucar Diouf

2012-01-01

Full Text Available Key factors to control the efficiency in iridium doped red and green phosphorescent light emitting diodes (PhOLEDs are discussed in this review: exciton confinement, charge trapping, dopant concentration and dopant molecular structure. They are not independent from each other but we attempt to present each of them in a situation where its specific effects are predominant. A good efficiency in PhOLEDs requires the triplet energy of host molecules to be sufficiently high to confine the triplet excitons within the emitting layer (EML. Furthermore, triplet excitons must be retained within the EML and should not drift into the nonradiative levels of the electron or hole transport layer (resp., ETL or HTL; this is achieved by carefully choosing the EML’s adjacent layers. We prove how reducing charge trapping results in higher efficiency in PhOLEDs. We show that there is an ideal concentration for a maximum efficiency of PhOLEDs. Finally, we present the effects of molecular structure on the efficiency of PhOLEDs using red iridium complex dopant with different modifications on the ligand to tune its highest occupied molecular orbital (HOMO and lowest unoccupied molecular orbital (LUMO energies.

Doping of nano structures for light emitting diode applications

International Nuclear Information System (INIS)

Han, S. W.; Yoo, H. J.; Jeong, E. S.; Park, S. H.

2006-04-01

Lighting Emitting Diodes (LED) have been widely studied and developed for practical applications and the LED market in the world have been dramatically expended. GaN-based LEDs are mostly used. However, for diverse application, we should first solved several problems in the GaN-based LEDs, thermal heating effects and low light emitting efficiency. The thermal heating effects reduce the life time of LEDs and the low light emitting efficiency are disadvantageous in competition with electric lights. In this project, we studied the possibility of ZnO nanomaterials as LEDs. We have developed a techniques to fabricated reproducible ZnO nanorod arrays on various substrates with 40 - 100 nm diameters. We have successfully fabricated two-dimensional ZnO film growth on one-dimensional nanorods. We have also systematically studied ZnO nanorod growth on GaN and Al 2 O 3 substrated with different proton treatments to understand the ZnO nanorod growth mechanism. These techniques will be used to develop p-ZnO/n-ZnO nanomaterials as LEDs

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Science.gov (United States)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2017-05-09

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Ultrathin nondoped emissive layers for efficient and simple monochrome and white organic light-emitting diodes.

Science.gov (United States)

Zhao, Yongbiao; Chen, Jiangshan; Ma, Dongge

2013-02-01

In this paper, highly efficient and simple monochrome blue, green, orange, and red organic light emitting diodes (OLEDs) based on ultrathin nondoped emissive layers (EMLs) have been reported. The ultrathin nondoped EML was constructed by introducing a 0.1 nm thin layer of pure phosphorescent dyes between a hole transporting layer and an electron transporting layer. The maximum external quantum efficiencies (EQEs) reached 17.1%, 20.9%, 17.3%, and 19.2% for blue, green, orange, and red monochrome OLEDs, respectively, indicating the universality of the ultrathin nondoped EML for most phosphorescent dyes. On the basis of this, simple white OLED structures are also demonstrated. The demonstrated complementary blue/orange, three primary blue/green/red, and four color blue/green/orange/red white OLEDs show high efficiency and good white emission, indicating the advantage of ultrathin nondoped EMLs on constructing simple and efficient white OLEDs.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

KAUST Repository

Han, Shikui

2017-07-04

Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

Light emitting diodes (LED): applications in forest and native plant nurseries

Science.gov (United States)

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lai, Chun-Feng; Lu, T.C.; Wang, S.C. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Chao, C.H.; Hsueh, H.T.; Wang, J.F.T.; Yeh, W.Y.; Chi, J.Y. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China); Kuo, H.C.

2008-07-01

Photonic crystal (PhC) light-emitting diodes (LEDs) exhibiting anisotropic light extraction have been investigated experimentally and theoretically. It is found that the anisotropic light extraction strongly depends on the lattice constant and orientation. Optical images of the anisotropy in the azimuthal direction are obtained using annular structure with triangular lattice. 6-fold symmetric light extraction patterns with varying number of petals are observed. More petals in multiple of 6 appear in the observed image with lattice constant increasing. This anisotropic behavior suggests a new means to optimize the PhC design of GaN LED for light extraction. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

National Research Council Canada - National Science Library

Siskaninetz, William

2004-01-01

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

Science.gov (United States)

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

KAUST Repository

Park, Jihoon; Kim, Eugene

2015-01-01

© 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Science.gov (United States)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

Science.gov (United States)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Understanding the role of ultra-thin polymeric interlayers in improving efficiency of polymer light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Bailey, Jim; Wang, Xuhua; Bradley, Donal D. C.; Kim, Ji-Seon, E-mail: ji-seon.kim@imperial.ac.uk [Department of Physics and Centre for Plastic Electronics, South Kensington Campus, Imperial College London, London SW7 2AZ (United Kingdom); Wright, Edward N.; Walker, Alison B. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

2014-05-28

Insertion of ultra-thin polymeric interlayers (ILs) between the poly(3,4-ethylenedioxythiophene):polystyrene sulphonate hole injection and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) light emission layers of polymer light emitting diodes (PLEDs) can significantly increase their efficiency. In this paper, we investigate experimentally a broad range of probable causes of this enhancement with an eye to determining which IL parameters have the most significant effects. The importance of hole injection and electron blocking was studied through varying the IL material (and consequently its electronic energy levels) for both PLED and hole-only diode structures. The role of IL conductivity was examined by introducing a varying level of charge-transfer doping through blending the IL materials with a strong electron-accepting small molecule in concentrations from 1% to 7% by weight. Depositing ILs with thicknesses below the exciton diffusion length of ∼15 nm allowed the role of the IL as a physical barrier to exciton quenching to be probed. IL containing PLEDs was also fabricated with Lumation Green Series 1300 (LG 1300) light emission layers. On the other hand, the PLEDs were modeled using a 3D multi-particle Kinetic Monte Carlo simulation coupled with an optical model describing how light is extracted from the PLED. The model describes charge carrier transport and interactions between electrons, holes, singlets, and triplets, with the current density, luminance, and recombination zone (RZ) locations calculated for each PLED. The model shows F8BT PLEDs have a narrow charge RZ adjacent to the anode, while LG 1300 PLEDs have a wide charge RZ that is evenly distributed across the light emitting layer. Varying the light emitting layer from F8BT to Lumation Green Series 1300, we therefore experimentally examine the dependence of the IL function, specifically in regard to anode-side exciton quenching, on the location of the RZ. We found an exponential dependence of

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2016-11-15

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Optimization of freeform lightpipes for light-emitting-diode projectors.

Science.gov (United States)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Blue laser diode (LD) and light emitting diode (LED) applications

International Nuclear Information System (INIS)

Bergh, Arpad A.

2004-01-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Blue laser diode (LD) and light emitting diode (LED) applications

Energy Technology Data Exchange (ETDEWEB)

Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

International Nuclear Information System (INIS)

Guan Yunxia; Niu Lianbin

2009-01-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)

2015-06-07

Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.

Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

International Nuclear Information System (INIS)

Coenen, Michiel J.J.; Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M.; Groen, Pim

2015-01-01

Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Monochromic radiation through light-emitting diode (LED positively augments in vitro shoot regeneration in Orchid (Dendrobium sonia

Directory of Open Access Journals (Sweden)

Vandita Billore

2017-07-01

Full Text Available Monochromatic lights emitted by light-emitting diodes (LEDs have generated great interest for efficient and controlled growth in vitro, especially of plants which are endangered or require specific intensity and wavelength of light. In the present study, we have evaluated the effect of monochromatic LEDs on in vitro morphogenesis: growth, proliferation of shoot cultures, and rooting of Dendrobium sonia. Different light sources viz. white LEDs (W, blue LEDs (B, yellow LEDs (Y and red LEDs (R were tested under photoperiod of 16 h of exposure and 8 h of dark. The frequency of morphogenesis depended on the wavelength of the applied monochromatic light. Higher wavelength monochromatic light (yellow light was observed to induce higher shoot proliferation (98%, early PLB (protocorm-like bodies formation, differentiation into green buds and shoot initiation as compared to red, blue and white light treatments. Yellow light also yielded higher number of shoots per explants (29 shoots/explant than red, blue and white light treatments. The results suggest that the monochromatic light sources stimulate morphogenic effects on in vitro culture of Dendrobium sonia, and that yellow light treatment can be used to enhance the efficiency of micropropagation.

Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

International Nuclear Information System (INIS)

Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

2009-01-01

The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

NARCIS (Netherlands)

Brondijk, J. J.; Li, X.; Akkerman, H. B.; Blom, P. W. M.; de Boer, B.

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

Energy Technology Data Exchange (ETDEWEB)

Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

2009-03-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

Directory of Open Access Journals (Sweden)

W. Wang

2015-01-01

Full Text Available A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a 6.6×5 mm2 large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

DEFF Research Database (Denmark)

Thorseth, Anders

2012-01-01

are simulated using radiometrically measured single LED spectra. The method uses electrical input powers as input parameters and optimizes the resulting spectral power distribution with regard to color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal......To address the problem of spectral light quality from color mixing light-emitting diode systems, a method for optimizing the spectral output of multicolor LED system with regards to standardized quality parameters has been developed. The composite spectral power distribution from the LEDs...

Lutzomyia spp. (Diptera: Psychodidae) response to olfactory attractant- and light emitting diode-modified Mosquito Magnet X (MM-X) traps.

Science.gov (United States)

Mann, Rajinder S; Kaufman, Phillip E; Butler, Jerry F

2009-09-01

Mosquito Magnet-X traps were modified for use with blue, green, red, and blue-green-red light-emitting diodes and olfactory attractants to determine the response of Lutzomyia shannoni (Dyar) and Lutzomyia vexator (Coquillett) (Diptera: Psychodidae) field populations to these attractants. Red and blue-green-red-baited traps captured the highest numbers of Lu. shannoni and Lu. vexator, respectively, although, there were no significant differences between the colors. Baiting the traps with CO, attracted significantly higher numbers of Lu. shannoni but showed no effect on Lu. vexator capture. In comparison with CO, alone, Lu. shannoni preferred 1-octen-3-ol and 1-hexen-3-ol (0.05 g per trap) in combination with CO.

Investigation of phosphorescent blue organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2008-07-01

Recently, rapid development of phosphorescent materials has significantly improved the efficiency of organic light emitting diodes (OLEDs). By using efficient phosphorescent emitter materials white OLEDs with high power efficiency values could be demonstrated. But especially blue phosphorescent devices, due to stability issues, need to be further investigated und optimized. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated and characterized to study the impact of charge carriers on device performance.

Aggregation in organic light emitting diodes

Science.gov (United States)

Meyer, Abigail

Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

Science.gov (United States)

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-02-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m-2 that can already satisfy the requirements for lighting sources and displays.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau

2015-01-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern

Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

Science.gov (United States)

Stark, Christoph J. M.

Light-emitting diodes (LEDs) are commonly designed and studied based on bulk material properties. In this thesis different approaches based on patterns in the nano and micrometer length scale range are used to tackle low efficiency in the green spectral region, which is known as “green gap”. Since light generation and extraction are governed by microscopic processes, it is instructive to study LEDs with lateral mesa sizes scaled to the nanometer range. Besides the well-known case of the quantum size effect along the growth direction, a continuous lateral scaling could reveal the mechanisms behind the purported absence of a green gap in nanowire LEDs and the role of their extraction enhancement. Furthermore the possibility to modulate strain and piezoelectric polarization by post growth patterning is of practical interest, because the internal electric fields in conventional wurtzite GaN LEDs cause performance problems. A possible alternative is cubic phase GaN, which is free of built-in polarization fields. LEDs on cubic GaN could show the link between strong polarization fields and efficiency roll-off at high current densities, also known as droop. An additional problem for all nitride-based LEDs is efficient light extraction. For a planar GaN LED only roughly 8% of the generated light can be extracted. Novel lightextraction structures with extraction-favoring geometry can yield significant increase in light output power. To investigate the effect of scaling the mesa dimension, micro and nano-sized LED arrays of variable structure size were fabricated. The nano-LEDs were patterned by electron beam lithography and dry etching. They contained up to 100 parallel nano-stripe LEDs connected to one common contact area. The mesa width was varied over 1 μm, 200 nm, and 50 nm. These LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. An electroluminescence (EL) wavelength shift of 3 nm

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

2011-01-01

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

2011-01-01

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

International Nuclear Information System (INIS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W. II; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin registered . Photofrin registered is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin registered is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin registered has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin registered . First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude

2015-03-13

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, commercial and outdoors, with more efficient and better light quality lamps. We show that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens. Then, progress from present performance requires identification of the loss mechanisms in light emission from LEDs, and solutions competing with mainstream c-plane LEDS grown on sapphire need to be on par with these. Special attention is devoted to a discussion of the efficiency droop mechanisms, and of a recent direct measurement of Auger generated electrons which appear to be responsible for droop.

Topical methyl-aminolevulinate photodynamic therapy using red light-emitting diode light for treatment of multiple actinic keratoses: A randomized, double-blind, placebo-controlled study.

Science.gov (United States)

Pariser, David; Loss, Robert; Jarratt, Michael; Abramovits, William; Spencer, James; Geronemus, Roy; Bailin, Philip; Bruce, Suzanne

2008-10-01

The use of light-emitting diode light offers practical advantages in photodynamic therapy (PDT) with topical methyl-aminolevulinate (MAL) for management of actinic keratoses (AK). We sought to evaluate the efficacy of MAL PDT using red light-emitting diode light. We conducted a multicenter, double-blind, randomized study. A total of 49 patients with 363 AK lesions had 16.8% MAL cream applied under occlusion for 3 hours, and 47 patients with 360 AK lesions had vehicle cream similarly applied. The lesions were then illuminated (630 nm, light dose 37 J/cm2) with repeated treatment 1 week later. Complete lesion and patient (all lesions showing complete response) response rates were evaluated 3 months after last treatment. MAL PDT was superior (PAK. MAL PDT using red light-emitting diode light is an appropriate treatment alternative for multiple AK lesions.

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

Energy Technology Data Exchange (ETDEWEB)

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

NARCIS (Netherlands)

Holst, van der J.J.M.

2010-01-01

Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

International Nuclear Information System (INIS)

Wu, F.; Dawei, Z.; Shuzhen, S.; Yiming, Z.; Songlin, Z.; Jian, X.

2012-01-01

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nano crystal QDs can be tailored by varying the nano crystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

International Nuclear Information System (INIS)

Baek, H I; Lee, C H

2008-01-01

We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{4-(N,N-diphenylamino) phenyl}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A -1 (an external quantum efficiency of 8.5%) at 100 cd m -2 and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

KAUST Repository

Janjua, Bilal

2017-02-16

White light based on blue laser - YAG: Ce phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm with peak output power of 400 μW. A low turn-on voltage of ∼2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of ∼39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

Science.gov (United States)

Janjua, Bilal; Ng, Tien K.; Zhao, Chao; Anjum, Dalaver H.; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Shen, Chao; Ooi, Boon S.

2017-02-01

White light based on blue laser - YAG: Ce3+ phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm2 with peak output power of 400 μW. A low turn-on voltage of 2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of 39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng

2011-05-01

InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

Determination of illuminants representing typical white light emitting diodes sources

DEFF Research Database (Denmark)

Jost, S.; Ngo, M.; Ferrero, A.

2017-01-01

is to develop LED-based illuminants that describe typical white LED products based on their Spectral Power Distributions (SPDs). Some of these new illuminants will be recommended in the update of the CIE publication 15 on colorimetry with the other typical illuminants, and among them, some could be used......Solid-state lighting (SSL) products are already in use by consumers and are rapidly gaining the lighting market. Especially, white Light Emitting Diode (LED) sources are replacing banned incandescent lamps and other lighting technologies in most general lighting applications. The aim of this work...... to complement the CIE standard illuminant A for calibration use in photometry....

Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

Science.gov (United States)

Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

2018-02-01

This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

A Solution Processed Flexible Nanocomposite Electrode with Efficient Light Extraction for Organic Light Emitting Diodes

Science.gov (United States)

Li, Lu; Liang, Jiajie; Chou, Shu-Yu; Zhu, Xiaodan; Niu, Xiaofan; Zhibinyu; Pei, Qibing

2014-03-01

Highly efficient organic light emitting diodes (OLEDs) based on multiple layers of vapor evaporated small molecules, indium tin oxide transparent electrode, and glass substrate have been extensively investigated and are being commercialized. The light extraction from the exciton radiative decay is limited to less than 30% due to plasmonic quenching on the metallic cathode and the waveguide in the multi-layer sandwich structure. Here we report a flexible nanocomposite electrode comprising single-walled carbon nanotubes and silver nanowires stacked and embedded in the surface of a polymer substrate. Nanoparticles of barium strontium titanate are dispersed within the substrate to enhance light extraction efficiency. Green polymer OLED (PLEDs) fabricated on the nanocomposite electrode exhibit a maximum current efficiency of 118 cd/A at 10,000 cd/m2 with the calculated external quantum efficiency being 38.9%. The efficiencies of white PLEDs are 46.7 cd/A and 30.5%, respectively. The devices can be bent to 3 mm radius repeatedly without significant loss of electroluminescent performance. The nanocomposite electrode could pave the way to high-efficiency flexible OLEDs with simplified device structure and low fabrication cost.

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

Science.gov (United States)

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

2010-11-01

The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias

International Nuclear Information System (INIS)

Zhang, Lichun; Li, Qingshan; Qu, Chong; Zhang, Zhongjun; Huang, Ruizhi; Zhao, Fengzhou

2013-01-01

Heterojunction light-emitting diodes (LEDs) based on arrays of ZnO nanorods were fabricated on p-GaN films by the hydrothermal method. Without any phosphors, white-light electroluminescence (EL) from ZnO nanorods/p-GaN heterojunction LEDs operated at reverse breakdown bias was observed. The EL spectra are composed of an ultraviolet (UV) emission centered at 382 nm, a blue light located at 431 nm and a broadband yellow–green light at around 547 nm, which originated from band-edge emission in ZnO, the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinates of EL spectrum are very close to the (0.333, 0.333) of standard white light. The origin of these emissions has been discussed and the tunneling effect in the interface is probably the mechanism to explain EL emission. (paper)

Comparative Study of Lettuce and Radish Grown Under Red and Blue Light-Emitting Diodes (LEDs) and White Fluorescent Lamps

Science.gov (United States)

Mickens, Matthew A.

2012-01-01

Growing vegetable crops in space will be an essential part of sustaining astronauts during long-term missions. To drive photosynthesis, red and blue light-emitting diodes (LEDs) have attracted attention because of their efficiency, longevity, small size, and safety. In efforts to optimize crop production, there have also been recent interests in analyzing the subtle effects of green light on plant growth, and to determine if it serves as a source of growth enhancement or suppression. A comparative study was performed on two short cycle crops of lettuce (Outredgeous) and radish (Cherry Bomb) grown under two light treatments. The first treatment being red and blue LEDs, and the second treatment consisting of white fluorescent lamps which contain a portion of green light. In addition to comparing biomass production, physiological characterizations were conducted on how the light treatments influence morphology, water use, chlorophyll content, and the production of A TP within plant tissues.

Organic Light-Emitting Diodes Based on Phthalimide Derivatives: Improvement of the Electroluminescence Properties

Directory of Open Access Journals (Sweden)

Frédéric Dumur

2018-03-01

Full Text Available In this study, a phthalimide-based fluorescent material has been examined as a green emitter for multilayered organic light-emitting diodes (OLEDs. By optimizing the device stacking, a maximum brightness of 28,450 cd/m2 at 11.0 V and a maximum external quantum efficiency of 3.11% could be obtained. Interestingly, OLEDs fabricated with Fluo-2 presented a 20-fold current efficiency improvement compared to the previous results reported in the literature, evidencing the crucial role of the device stacking in the electroluminescence (EL performance of a selected emitter. Device lifetime was also examined and an operational stability comparable to that reported for a standard triplet emitter i.e., bis(4-methyl-2,5-diphenyl-pyridineiridium(III acetylacetonate [(mdppy2Iracac] was evidenced.

Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

Science.gov (United States)

Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

2016-09-01

Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

The application of the light emitting diode in MR room lighting

International Nuclear Information System (INIS)

Cao Jun; Wang Chunhong

2009-01-01

Objective: To investigate the application of white light emitting diode (LED) in magnetic resonance room, in order to resolve the damageable problem of incandescent lights under the high magnetic field. Methods: The white LEDs and the incandescent lights were installed in MR room, the number of damaged lights was compared after 300 hours. Chi-square test was used for the statistical analysis. And the illuminance and 50 000 hours electricity consumption between LED and incandescent lights were calculated. Results: The number of damaged LED and incandescent lights was 2 and 32, respectively and there was a significant difference (χ 2 =48.813, P=0.000). The illuminance of the LED and incandescent lights was 155 lx and 100 lx at the 0.75 m horizontal level and the 50 000 hour's electricity consumption was 200 kW and 5000 kW, respectively. Conclusion: It is feasible and a great advantage to use the white LEDs in MR room lighting. (authors)

Micro-light-emitting-diode array with dual functions of visible light communication and illumination

International Nuclear Information System (INIS)

Huang Yong; Guo Zhi-You; Sun Hui-Qing; Huang Hong-Yong

2017-01-01

We demonstrate high-speed blue 4 × 4 micro-light-emitting-diode (LED) arrays with 14 light-emitting units (two light-emitting units are used as the positive and negative electrodes for power supply, respectively) comprising multiple quantum wells formed of GaN epitaxial layers grown on a sapphire substrate, and experimentally test their applicability for being used as VLC transmitters and illuminations. The micro-LED arrays provide a maximum −3-dB frequency response of 60.5 MHz with a smooth frequency curve from 1 MHz to 500 MHz for an optical output power of 165 mW at an injection current of 30 mA, which, to our knowledge, is the highest response frequency ever reported for blue GaN-based LEDs operating at that level of optical output power. The relationship between the frequency and size of the device single pixel diameter reveals the relationship between the response frequency and diffusion capacitance of the device. (paper)

Topology optimisation of passive coolers for light-emitting diode lamps

DEFF Research Database (Denmark)

Alexandersen, Joe

2015-01-01

This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2014-02-17

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m{sup 2} corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m{sup 2} and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

Purely Organic Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes.

Science.gov (United States)

Wong, Michael Y; Zysman-Colman, Eli

2017-06-01

The design of thermally activated delayed fluorescence (TADF) materials both as emitters and as hosts is an exploding area of research. The replacement of phosphorescent metal complexes with inexpensive organic compounds in electroluminescent (EL) devices that demonstrate comparable performance metrics is paradigm shifting, as these new materials offer the possibility of developing low-cost lighting and displays. Here, a comprehensive review of TADF materials is presented, with a focus on linking their optoelectronic behavior with the performance of the organic light-emitting diode (OLED) and related EL devices. TADF emitters are cross-compared within specific color ranges, with a focus on blue, green-yellow, orange-red, and white OLEDs. Organic small-molecule, dendrimer, polymer, and exciplex emitters are all discussed within this review, as is their use as host materials. Correlations are provided between the structure of the TADF materials and their optoelectronic properties. The success of TADF materials has ushered in the next generation of OLEDs. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Directory of Open Access Journals (Sweden)

Wenyan Liu

2015-01-01

Full Text Available The quantum dot-based light-emitting diodes (QD-LEDs were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM, and power efficiency (PE. The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

Energy Technology Data Exchange (ETDEWEB)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya

2017-05-08

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya; Ng, Tien Khee; Zhao, Chao; Janjua, Bilal; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S.

2017-01-01

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

Directory of Open Access Journals (Sweden)

Fengbing Wu

2012-01-01

Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

Science.gov (United States)

Qiao, Liang; Ma, Zi-Guang; Chen, Hong; Wu, Hai-Yan; Chen, Xue-Fang; Yang, Hao-Jun; Zhao, Bin; He, Miao; Zheng, Shu-Wen; Li, Shu-Ti

2016-10-01

In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. Project supported by the National Natural Science Foundation of China (Grant Nos. 11204360 and 61210014), the Science and Technology Planning Projects of Guangdong Province, China (Grant Nos. 2014B050505020, 2015B010114007, and 2014B090904045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20134407110008), the Guangzhou Municipal Science and Technology Project of Guangdong Province, China (Grant No. 2016201604030027), and the Zhongshan Science and Technology Project of Guangdong Province, China (Grant No. 2013B3FC0003).

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

Recycling of Gallium from End-of-Life Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Nagy S.

2017-06-01

Full Text Available Nowadays Light Emitting Diodes (LEDs are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs.

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Recent advances in light outcoupling from white organic light-emitting diodes

Science.gov (United States)

Gather, Malte C.; Reineke, Sebastian

2015-01-01

Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

Evaluation of inorganic and organic light-emitting diode displays for signage application

Science.gov (United States)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

Study of electrical fatigue by defect engineering in organic light-emitting diodes

International Nuclear Information System (INIS)

Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

2015-01-01

Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

Science.gov (United States)

Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

2015-05-01

Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light. Copyright © 2014 John Wiley & Sons, Ltd.

Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

Science.gov (United States)

Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

2018-06-01

Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2013-01-01

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

Science.gov (United States)

Ecton, Jeremy Exton

Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases. In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated. Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of 670-nm Light-Emitting Diode Light On Neuronal Cultures

Science.gov (United States)

Wong-Riley, Margaret T. T.; Whelan, Harry T.

2002-01-01

Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

NARCIS (Netherlands)

Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

2017-01-01

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power

Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

Energy Technology Data Exchange (ETDEWEB)

Baek, H I; Lee, C H [School of Electrical Engineering and Computer Science and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)], E-mail: hibaek75@snu.ac.kr

2008-05-21

We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp{sub 2}Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{l_brace}4-(N,N-diphenylamino) phenyl{r_brace}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A{sup -1} (an external quantum efficiency of 8.5%) at 100 cd m{sup -2} and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Dr. Harry Whelan With the Light Emitting Diode Probe

Science.gov (United States)

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

Science.gov (United States)

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Manipulating the Local Light Emission in Organic Light-Emitting Diodes by using Patterned Self-Assembled Monolayers

NARCIS (Netherlands)

Mathijssen, S.G.J.; Hal, P.A. van; Biggelaar, T.J.M. van den; Smits, E.C.P.; Boer, B. de; Kemerink, M.; Janssen, R.A.J.; Leeuw, D.M. de

2008-01-01

In organic light-emitting diodes (OLEDs), interface dipoles play an important role in the process of charge injection from the metallic electrode into the active organic layer.[1,2] An oriented dipole layer changes the effective work function of the electrode because of its internal electric field.

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

Science.gov (United States)

Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

2014-06-11

Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

Science.gov (United States)

Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

2010-10-25

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

Energy Technology Data Exchange (ETDEWEB)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

2014-04-28

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Electroluminescence of organic light-emitting diodes consisting of an undoped (pbi)2Ir(acac) phosphorescent layer

Science.gov (United States)

Lei, Xia; Yu, Junsheng; Zhao, Juan; Jiang, Yadong

2011-11-01

The electroluminescence (EL) characteristics of phosphorescent organic light-emitting diodes (OLEDs) with an undoped bis(1,2-dipheny1-1H-benzoimidazole) iridium (acetylacetonate) [(pbi)2Ir(acac)] emissive layer (EML) of various film thicknesses were studied. The results showed that the intensity of green light emission decreased rapidly with the increasing thickness of (pbi)2Ir(acac), which was relevant to the triplet excimer emission. It suggested that the concentration quenching of monomer emission in the undoped (pbi)2Ir(acac) film was mainly due to the formation of triplet excimer and partly due to the triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA). A green OLED with a maximum luminance of 26,531 cd/m2, a current efficiency of 36.2 cd/A, and a power efficiency of 32.4 lm/W was obtained, when the triplet excimer emission was eliminated. Moreover, the white OLED with low efficiency roll-off was realized due to the broadened recombination zone and reduced quenching effects in the EML when no electron blocking layer was employed.

The influence of melt purification and structure defects on mid-infrared light emitting diodes

CERN Document Server

Krier, A

2003-01-01

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mu m and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH sub 4 absorption spectrum and potentially could form the basis of a practical infrared CH sub 4 gas sensor.

Tunable light extraction efficiency of GaN light emitting diodes by ZnO nanorod arrays

International Nuclear Information System (INIS)

Chao, C H; Lin, W H; Lin, C F; Chen, C H; Changjean, C H

2009-01-01

We report the influence of ZnO nanorod arrays (NRAs) on the light extraction efficiency of GaN light emitting diodes (LEDs). Our investigation indicates that the output light intensity of the device exhibits a periodic oscillation as a function of the rod length. The variation of light extraction efficiency is caused by the Fabry–Perot resonance of the film composed of the nanorods. The theoretical analysis shows a good agreement with the measurement results. Our study reveals a method to control the output light extraction efficiency of GaN LEDs via a simple solution-based synthesized ZnO NRAs

Extracting the emitter orientation in organic light-emitting diodes from external quantum efficiency measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Reichardt, Lukas J.; Wehrmeister, Sebastian; Scholz, Bert J.; Mayr, Christian; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Rausch, Andreas F.; Wehlus, Thomas; Reusch, Thilo C. G. [OSRAM OLED GmbH, Wernerwerkstrasse 2, 93049 Regensburg (Germany); Ciarnáin, Rossá Mac; Danz, Norbert [Fraunhofer Institute for Applied Optics and Precision Engineering, 07745 Jena (Germany)

2014-07-28

Emitter orientation will play a major role in future applications of organic light-emitting diodes due to its strong impact on the efficiency of the devices. Up to now, determining the orientation of transition dipole moments required elaborate angular-dependent measurements of the light emission pattern. In this paper, we present a simplified and straightforward method to extract the emitter orientation from external quantum efficiency measurements. We demonstrate the validity of the method on three different dye-doped emitting systems.

New Materials and Device Designs for Organic Light-Emitting Diodes

Science.gov (United States)

O'Brien, Barry Patrick

Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red/green

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

Science.gov (United States)

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

A white organic light emitting diode based on anthracene-triphenylamine derivatives

Science.gov (United States)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

Science.gov (United States)

Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

2017-11-01

All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

Blue Light Emitting Diodes for Optical Stimulation of Quartz in Retrospective Dosimetry and Dating (invited paper)

International Nuclear Information System (INIS)

Botter-Jensen, L.; Duller, G.A.T.; Murray, A.S.; Banerjee, D.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination of the dependence of the blue LED OSL on preheat temperature, it is deduced that there is no evidence that the blue LEDs stimulate deep traps in a different manner from broadband filtered light. It is concluded that blue LEDs offer a practical alternative to existing stimulation sources. They have the significant advantages that the life-time is indefinite, and the output can be controlled electronically; this allows the power to be readily controlled by software. Unlike a filtered light source, there are no electromechanical parts, and the switch on/off times are about 10 times faster than a shutter. Finally, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates. (author)

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

Science.gov (United States)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

OpenAIRE

Defu Chen; Huifen Zheng; Zhiyong Huang; Huiyun Lin; Zhidong Ke; Shusen Xie; Buhong Li

2012-01-01

The aim of this study is to develop a light-emitting diode- (LED-) based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT). This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irrad...

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

OpenAIRE

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-01-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepare...

Ultraviolet light-emitting diodes in water disinfection.

Science.gov (United States)

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Science.gov (United States)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

Science.gov (United States)

Thorseth, Anders

2012-03-01

Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

A triphenylamine substituted quinacridone derivative for solution processed organic light emitting diodes

NARCIS (Netherlands)

Pilz da Cunha, M.; Do, T.T.; Yambem, S.D.; Pham, H.D.; Chang, S.; Manzhos, S.; Katoh, R.; Sonar, P.

2018-01-01

We report on a novel quinacridone derivative design, namely, 2,9-bis(4-(bis(4-methoxyphenyl)amino)phenyl)-5,12-bis(2-ethylhexyl)-5,12-dihydroquinolino[2,3-b]acridine-7,14-dione (TPA-QA-TPA) for possible use as a solution processable emissive layer in organic light emitting diodes (OLEDs). TPA-QA-TPA

High tunability and superluminescence in InAs mid-infrared light emitting diodes

International Nuclear Information System (INIS)

Sherstnev, V.V.; Krier, A.; Hill, G.

2002-01-01

We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

Light-emitting diode street lights reduce last-ditch evasive manoeuvres by moths to bat echolocation calls

Science.gov (United States)

Wakefield, Andrew; Stone, Emma L.; Jones, Gareth; Harris, Stephen

2015-01-01

The light-emitting diode (LED) street light market is expanding globally, and it is important to understand how LED lights affect wildlife populations. We compared evasive flight responses of moths to bat echolocation calls experimentally under LED-lit and -unlit conditions. Significantly, fewer moths performed ‘powerdive’ flight manoeuvres in response to bat calls (feeding buzz sequences from Nyctalus spp.) under an LED street light than in the dark. LED street lights reduce the anti-predator behaviour of moths, shifting the balance in favour of their predators, aerial hawking bats. PMID:26361558

Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

International Nuclear Information System (INIS)

Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

2014-01-01

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

Science.gov (United States)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Science.gov (United States)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Directory of Open Access Journals (Sweden)

Abdul Halim N. Syafira

2017-01-01

Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

Energy Technology Data Exchange (ETDEWEB)

Rothberg, Lewis

2012-11-30

Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential to be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.

Plasmon enhanced green GaN light-emitting diodes - Invited paper

DEFF Research Database (Denmark)

Ou, Haiyan; Fadil, Ahmed; Iida, Daisuke

in spectral design, more compact etc. TheIII-nitride (GaN, InNetc.) semiconductors are attracting a lot of research effort because the combination of both could emit light with wavelength range from UV to infrared. Basically one material platform could provide all the solutions to light sources.However huge...... nanosphere lithography. For both cases, emission enhancement is demonstrated. For periodic Ag nanoparicles, aphotoluminescence enhancement of 2.7 is observed with a nanodisk diameter of 330 nm.It is found that an optimalpitch exists for a given particle size.For the random Ag nanoparticles,low temperature...

Best practices : bus signage for persons with visual impairments : light-emitting diode (LED) signs

Science.gov (United States)

2004-01-01

This best-practices report provides key information regarding the use of Light-Emitting Diode (LED) sign technologies to present destination and route information on transit vehicles. It will assist managers and engineers in the acquisition and use o...

New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2014-06-01

Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

Control of a White Organic Light Emitting Diode emission parameters using a single doped RGB active layer

Energy Technology Data Exchange (ETDEWEB)

Pereira, D. [Departamento de Ciência dos Materiais e i3N – Instituto de Nanoestruturas, Nanomodelação e Nanofabricação, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica (Portugal); Pinto, A.; Califórnia, A.; Gomes, J. [CeNTI – Centro de Nanotecnologia, Materiais Técnicos, Funcionais e Inteligentes, Rua Fernando Mesquita 2785, 4760-034 Vila Nova de Famalicão (Portugal); Pereira, L., E-mail: luiz@ua.pt [Departmento de Física e i3N – Instituto de Nanoestruturas, Nanomodelação e Nanofabricação, Universidade de Aveiro, 3810-193 Aveiro (Portugal)

2016-09-15

Highlights: • A simple WOLED for Solid State Lighting is proposed with high color stability. • Energy transfer and electroluminescence dynamics of a single RGB layer for WOLEDs. • White shade modulation and stability over large emitting areas and applied voltages. - Abstract: Solid State Lighting technologies based on Organic Light Emitting Diodes, became an interesting focus due to their unique properties. The use of a unique RGB active layer for white emission, although simple in theory, shows difficulty to stabilize both CIE coordinates and color modulation. In this work, a WOLED using a simple RGB layer, was developed achieving a high color stability and shade modulation. The RGB matrix comprises a blue host material NPB, doped with two guests, a green (Coumarin 153) and a red (DCM1) in low concentrations. The RGB layer carrier dynamics allows for the white emission in low device complexity and high stability. This was also shown independent of the white shade, obtained through small changes in the red dopant resulting in devices ranging from warm to cool white i.e. an easy color tuning. A detailed analysis of the opto-electrical behavior is made.

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

Science.gov (United States)

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Control of a White Organic Light Emitting Diode emission parameters using a single doped RGB active layer

International Nuclear Information System (INIS)

Pereira, D.; Pinto, A.; Califórnia, A.; Gomes, J.; Pereira, L.

2016-01-01

Highlights: • A simple WOLED for Solid State Lighting is proposed with high color stability. • Energy transfer and electroluminescence dynamics of a single RGB layer for WOLEDs. • White shade modulation and stability over large emitting areas and applied voltages. - Abstract: Solid State Lighting technologies based on Organic Light Emitting Diodes, became an interesting focus due to their unique properties. The use of a unique RGB active layer for white emission, although simple in theory, shows difficulty to stabilize both CIE coordinates and color modulation. In this work, a WOLED using a simple RGB layer, was developed achieving a high color stability and shade modulation. The RGB matrix comprises a blue host material NPB, doped with two guests, a green (Coumarin 153) and a red (DCM1) in low concentrations. The RGB layer carrier dynamics allows for the white emission in low device complexity and high stability. This was also shown independent of the white shade, obtained through small changes in the red dopant resulting in devices ranging from warm to cool white i.e. an easy color tuning. A detailed analysis of the opto-electrical behavior is made.

Nanoengineering of organic light-emitting diodes

International Nuclear Information System (INIS)

Lupton, J.M.

2000-11-01

This thesis reports nanoengineerging of the emission and transport properties of organic light-emitting diodes (LEDs). This is achieved by a control of the electronic material properties and the photonic device properties. A novel class of conjugated materials for electroluminescence (EL) applications is presented, based on successively branching, or dendritic, materials comprising an emissive core and a shielding dendritic architecture. Exciton localisation at the centre of these dendrimers is observed in both luminescence and absorption. A detailed quantum chemical investigation using an exciton model supports these findings and accurately describes the energies and oscillator strengths of transitions in the core and branches. The dendrimer generation describes the degree of branching and gives a direct measure of the separation and interaction between chromophores. Increasing generation is found to lead to a reduction in red tail emission. This correlates with an increase in operating field and LED efficiency. Dendrimer blends with triplet harvesting dendritic phosphors are also investigated and found to exhibit unique emission properties. A numerical device model is presented, which is used to describe the temperature dependence of single layer polymer LEDs by fitting the field-dependent mobility and the barrier to hole injection. The device model is also used to obtain mobility values for the dendrimer materials, which are in excellent agreement with results obtained from time-of-flight measurements. The dendrimer generation is shown to provide a direct control of hopping mobility, which decreases by two orders of magnitude as the dendrimer generation increases from 0 to 3. The photonic properties and spontaneous emission of an LED are modified by incorporating a periodic wavelength scale microstructure into the emitting film. This is found to double the amount of light emitted with no effect on the device current. An investigation of the angular dependence

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

Science.gov (United States)

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

Science.gov (United States)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Science.gov (United States)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Contact light-emitting diodes based on vertical ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

2014-05-15

We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

NARCIS (Netherlands)

van Woudenbergh, T; Blom, PWM; Huiberts, JN

2003-01-01

The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and

Quantum key distribution with an entangled light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-12-28

Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

Energy Technology Data Exchange (ETDEWEB)

Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

2008-07-01

Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

Passivation of organic light emitting diode anode grid lines by pulsed Joule heating

NARCIS (Netherlands)

Janka, M.; Gierth, R.; Rubingh, J.E.; Abendroth, M.; Eggert, M.; Moet, D.J.D.; Lupo, D.

2015-01-01

We report the self-aligned passivation of a current distribution grid for an organic light emitting diode (OLED) anode using a pulsed Joule heating method to align the passivation layer accurately on the metal grid. This method involves passing an electric current through the grid to cure a polymer

Natural substrate lift-off technique for vertical light-emitting diodes

Science.gov (United States)

Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

2014-04-01

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Efficient electron injection from solution-processed cesium stearate interlayers in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Najafi, A.; Kist, R. J. P.; Kuik, M.; Blom, P. W. M.

2013-01-01

The electron-injection capability of solution-processed cesium stearate films in organic light-emitting diodes is investigated. Cesium stearate, which is expected to exhibit good solubility and film formation due to its long hydrocarbon chain, is synthesized using a straightforward procedure.

Towards developing a tandem of organic solar cell and light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and IT, B-purple-12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

2011-01-15

It is proposed here to design a tandem of organic solar cell (OSC) and white organic light emitting diode (WOLED) which can generate power in the day time from the sun and provide lighting at night. With the advancement of chemical technology, such device is expected to be very-cost effective and reasonably efficient. A device thus fabricated has the potential of meeting the world's sustainable domestic and commercial power and lighting needs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis and green electrophosphorescence of a novel cyclometalated iridium complex in polymer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Wu Lilan [Department of Chemistry, National Cheng Kung University, Tainan, Taiwan 70101 (China); Tsai Sunghao [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101 (China); Guo Tzungfang [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan 70101 (China); Yang Chenghsien [Carbon Nanocapsules Research Department, Nano-Powder and Thin Film Technology Center, ITRI South, Tainan, Taiwan 709 (China)]. E-mail: jasonyang0606@yahoo.com.tw; Sun, I-W. [Department of Chemistry, National Cheng Kung University, Tainan, Taiwan 70101 (China)]. E-mail: iwsun@mail.ncku.edu.tw

2007-10-15

Abstact: In this paper, we synthesized a new complex bis(dibenzo[f,h]quinolinato-N,C {sup 2'}) iridium(III) acetylactonate ((DBQ){sub 2}Ir(acac)) having a longer conjugate system than bis(2-phenylpyridinato-N,C {sup 2'}) iridium(III) acetylacetonate ((PPY){sub 2}Ir(acac)). Interestingly (DBQ){sub 2}Ir(acac) emits at the same wavelength as (photoluminescence of 530 nm) (PPY){sub 2}Ir(acac). A high-efficiency electrophosphorescent polymer light-emitting diodes was constructed by using (DBQ){sub 2}Ir(acac) as the dopant, and a blend of poly(vinylcarbazole) (PVK) with 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazol (PBD) as the host material. The electroluminescence efficiency of 9.5 cd/A is reported for the device doped with 3 wt% of (DBQ){sub 2}Ir(acac). In this device, the emission from the PVK or PBD host was effectively inhibited with the using (DBQ){sub 2}Ir(acac) . Emission from the dopant molecules in such devices involve localization of the injected electron and hole on the metal-organic center. This can occur by a variety of mechanisms, including Foerster and Dexter energy transfer from the host transport material to the dopant, and direct trapping of both electrons and holes on the metal-organic center.

Solution processed multilayer red, green and blue phosphorescent organic light emitting diodes using carbazole dendrimer as a host

International Nuclear Information System (INIS)

Hasan, Zainal Abidin; Woon, Kai Lin; Wong, Wah Seng; Ariffin, Azhar; Chen, Show-An

2017-01-01

4, 4'-bis(3,6-bis(3, 6-ditert-pentyl-carbazol-9-yl)carbazol-9-yl)-2,2'-dimethylbiphenyl, a novel carbazole dendrimer, has been synthesized. This compound shows an excellent thermal stability with a high glass transition temperature of 283 °C and decomposition temperature of 487 °C. Density functional theory is used to investigate the frontier orbitals. It was found that the Highest Occupied Molecular Orbital and the Lowest Unoccupied Molecular Orbital levels of 4, 4'-bis(3,6-bis(3, 6-ditert-pentyl-carbazol-9-yl)carbazol-9-yl)-2,2'-dimethylbiphenyl are nearly degenerate to the next highest or lowest frontier orbitals. The electron rich outer dendrons along with Highest Occupied Molecular Orbital level of 5.24 eV as determined from cyclic voltammetry makes 4, 4'-bis(3,6-bis(3,6-ditert-pentyl-carbazol-9-yl)carbazol-9-yl)-2, 2'-dimethylbiphenyl a good hole transporting material. This compound also shows a triplet energy of 2.83 eV. Solution processable multilayer red, green and blue phosphorescent organic light emitting diodes are fabricated having 4, 4'-bis(3,6-bis(3,6-ditert-pentyl-carbazol-9-yl) carbazol-9-yl)-2,2'-dimethylbiphenyl as a hole transporting host. It was found that the CIE-coordinates remain constant within a wide range of brightness.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

Science.gov (United States)

Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

2018-09-01

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Dopant effects on charge transport to enhance performance of phosphorescent white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Changchun 130022 (China)

2015-11-07

We compared the performance of phosphorescent white organic light emitting diodes (WOLEDs) with red-blue-green and green-blue-red sequent emissive layers. It was found that the influence of red and green dopants on electron and hole transport in emissive layers leads to the large difference in the efficiency of fabricated WOLEDs. This improvement mechanism is well investigated by the current density-voltage characteristics of single-carrier devices based on dopant doped emissive layers and the comparison of electroluminescent and photoluminescence spectra, and attributed to the different change of charge carrier transport by the dopants. The optimized device achieves a maximum power efficiency, current efficiency, and external quantum efficiency of 37.0 lm/W, 38.7 cd/A, and 17.7%, respectively, which are only reduced to 32.8 lm/W, 38.5 cd/A, and 17.3% at 1000 cd/m{sup 2} luminance. The critical current density is as high as 210 mA/cm{sup 2}. It can be seen that the efficiency roll-off in phosphorescent WOLEDs can be well improved by effectively designing the structure of emissive layers.

Applications of Light Emitting Diodes in Health Care.

Science.gov (United States)

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

Science.gov (United States)

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Improved emission spectrum from quantum dot superluminescent light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Li, L.H.; Rossetti, M.; Fiore, A. [Institute of Photonics and Quantum Electronics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Occhi, L.; Velez, C. [EXALOS AG, Technoparkstrasse 1, 8005 Zuerich (Switzerland)

2006-12-15

The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

Science.gov (United States)

Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-05-01

We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Science.gov (United States)

Stark, Christoph J. M.; Detchprohm, Theeradetch; Zhao, Liang; Paskova, Tanya; Preble, Edward A.; Wetzel, Christian

2012-12-01

Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

Science.gov (United States)

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

All-solution processed polymer light-emitting diodes with air stable metal-oxide electrodes

NARCIS (Netherlands)

Bruyn, P. de; Moet, D.J.D.; Blom, P.W.M.

2012-01-01

We present an all-solution processed polymer light-emitting diode (PLED) using spincoated zinc oxide (ZnO) and vanadium pentoxide (V2O5) as electron and hole injecting contact, respectively. We compare the performance of these devices to the standard PLED design using PEDOT:PSS as anode and Ba/Al as

Synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures for highly efficient green quantum dot light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Han, Shikui; Tan, Chaoliang; Zhang, Xiao; Chen, Junze; Huang, Ying; Chen, Bo; Luo, Zhimin; Ma, Qinglang; Sindoro, Melinda; Zhang, Hua [Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore (Singapore); Yang, Xuyong [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Zhu, Yihan; Han, Yu [Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Saudi Arabia); Zhang, Hao; Li, Hai; Huang, Xiao; Huang, Wei [Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) (China); Qi, Xiaoying [Singapore Institute of Manufacturing Technology, Singapore (Singapore); Sun, Xiao Wei [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Dept. of Electrical and Electronic Engineering, College of Engineering, Southern Univ. of Science and Technology, Nanshan, Shenzhen, Guangdong (China)

2017-08-21

Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO{sub n} nanomaterials. The WO{sub n}-WX{sub 2} heterostructures are composed of WO{sub 2.9} nanoparticles (NPs) or WO{sub 2.7} nanowires (NWs) grown together with single- or few-layer WX{sub 2} nanosheets (NSs). As a proof-of-concept application, the WO{sub n}-WX{sub 2} heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO{sub 2.9} NP-WSe{sub 2} NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Electroplex emission at PVK/Bphen interface for application in white organic light-emitting diodes

International Nuclear Information System (INIS)

Wen Liang; Li Fushan; Xie Jiangxing; Wu Chaoxing; Zheng Yong; Chen Dongling; Xu Sheng; Guo Tailiang; Qu Bo; Chen Zhijian; Gong Qihuang

2011-01-01

White organic light-emitting diode (WOLED) with a structure of ITO/poly(N-vinylcarbazole) (PVK)/4,7-diphenyl-1, 10-phenanthroline (Bphen)/tris(8-hydroxyquinoline)aluminum (Alq 3 )/LiF/Al has been fabricated via the thermal evaporation technique. The electroluminescence (EL) spectrum of the as-fabricated WOLED covers from 380 to 700 nm of the visible light region with a wide blue emission from PVK and an interesting new red emission. The red emission at 613 nm in EL spectra of the WOLED was attributed to electroplex emission at PVK/Bphen interface since it was not observed in photoluminescence spectra. The WOLED showed a Commission International De l'Eclairage coordinate of (0.31, 0.32), which is very close to the standard white coordinate (0.33, 0.33). - Highlights: → A white organic light-emitting diode was fabricated by vacuum deposition. → A new red emission at 613 nm was observed in the electroluminescence spectra. → Red emission comes from electroplex instead of exciplex at PVK/Bphen interface. → The device has a CIE coordinate of (0.31, 0.32).

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

Science.gov (United States)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S.; Jeong, C.H.; Lim, J.T. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); The National Program for Tera-level Devices, Hawolgok-dong, Sungbuk-gu, Seoul, 136-791 (Korea, Republic of)], E-mail: gyyeom@skku.edu

2008-04-01

White top-emitting organic light-emitting diodes (TEOLEDs) composed of one doped emissive layer which emits two-wavelength light though the radiative recombination were fabricated. As the emissive layer, 4,4-bis(2,2-diphenylethen-1-yl)biphenyl (DPVBi) was used as the host material and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) was added as the dopant material. By optimizing the DCJTB concentration (1.2%) and the thickness of the DPVBi layer (30 nm), the intensity ratio of the two wavelengths could be adjusted for balanced white light emission. By using the device composed of glass/Ag (100 nm)/ITO (90 nm)/2-TNATA (60 nm)/NPB (15 nm)/DPVBi:DCJTB (1.2%, 30 nm)/Alq{sub 3} (20 nm)/Li (1.0 nm)/Al (2.0 nm)/Ag (20 nm)/ITO (63 nm)/SiO{sub 2} (42 nm), the Commission Internationale d'Eclairage (CIE) chromaticity coordinate of (0.32, 0.34) close to the ideal white color CIE coordinate could be obtained at 100 cd/m{sup 2}.

The optoelectronic chameleon - GaN-based light emitters from the UV to green

Energy Technology Data Exchange (ETDEWEB)

Kneissl, Michael [Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany)

2008-07-01

Group III-nitrides have evolved into one of the most versatile and important semiconductor materials for optoelectronic devices. GaN-based blue, green and white light emitting diodes have already entered many parts of everyday life and violet lasers are expected to be following soon. However, considering the extraordinary electronic properties and the wide spectral range that is accessible through nitride materials, it appears that it we have just touched the tip of the iceberg. We discuss some of the new fields of research for InAlGaN materials and devices and review progress in the development of near and deep ultraviolet light emitting diodes, as well as growth and optical properties of InN and indium rich InGaN alloys for emitter in the blue-green spectral range and beyond.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

Energy Technology Data Exchange (ETDEWEB)

Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

2014-10-15

The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

Science.gov (United States)

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan

2015-03-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

Usability of light-emitting diodes in precision approach path indicator systems by individuals with marginal color vision.

Science.gov (United States)

2014-05-01

To save energy, the FAA is planning to convert from incandescent lights to light-emitting diodes (LEDs) in : precision approach path indicator (PAPI) systems. Preliminary work on the usability of LEDs by color vision-waivered pilots (Bullough, Skinne...

Comparison of organic light emitting diodes with different mixed layer structures

Energy Technology Data Exchange (ETDEWEB)

Kee, Y.Y.; Siew, W.O. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Yap, S.S. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, T.Y., E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

2014-11-03

A mixed-source thermal evaporation method was used to fabricate organic light emitting diodes (OLEDs) with uniformly mixed (UM), continuously graded mixed (CGM) and step-wise graded, mixed (SGM) light-emitting layers. N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine and Tris-(8-hydroxyquinoline)aluminum were used, respectively, as the hole- and electron-transport materials. As compared to the conventional, heterojunction OLED, the maximum brightness of UM-, CGM- and SGM-OLEDs without charge injection layers were improved by 2.2, 3.8 and 2.1 times, respectively, while the maximum power efficiencies improved by 1.5, 3.2 and 1.9 times. These improvements were discussed in terms of more distributed recombination zone and removal of interfacial barrier. - Highlights: • Fabrication of OLEDs using a mixed-source evaporation technique • Three different types of mixed-host OLEDs with better brightness • Improved electroluminescence and power efficiencies as compared to conventional OLED.

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

Science.gov (United States)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-04-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the diffusion-dominated regime has a temperature-independent value of 2, which reveals that nonradiative trap-assisted recombination dominates the current. In contrast, the ideality factor of the light output approaches unity, demonstrating that luminance is governed by recombination of the bimolecular Langevin type. This apparent contradiction can be resolved by measuring the current and luminance ideality factor for a white-emitting polymer, where both free and trapped charge carriers recombine radiatively. With increasing bias voltage, Langevin recombination becomes dominant over trap-assisted recombination due to its stronger dependence on carrier density, leading to an enhancement in OLED efficiency.

Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

CERN Document Server

Williams, E W; Pamplin, BR

2013-01-01

Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

Science.gov (United States)

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

Science.gov (United States)

Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

2015-12-30

We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

Instense red phosphors for UV light emitting diode devices.

Science.gov (United States)

Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

2010-03-01

Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

Science.gov (United States)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-19

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m 2 ) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Simulations of emission from microcavity tandem organic light-emitting diodes

International Nuclear Information System (INIS)

Biswas, Rana; Xu, Chun; Zhao, Weijun; Liu, Rui; Shinar, Ruth; Shinar, Joseph

2011-01-01

Microcavity tandem organic light-emitting diodes (OLEDs) are simulated and compared to experimental results. The simulations are based on two complementary techniques: rigorous finite element solutions of Maxwell's equations and Fourier space scattering matrix solutions. A narrowing and blue shift of the emission spectrum relative to the noncavity single unit OLED is obtained both theoretically and experimentally. In the simulations, a distribution of emitting sources is placed near the interface of the electron transport layer tris(8-hydroxyquinoline) Al (Alq 3 ) and the hole transport layer (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine) (α-NPB). Far-field electric field intensities are simulated. The simulated widths of the emission peaks also agree with the experimental results. The simulations of the 2-unit tandem OLEDs shifted the emission to shorter wavelength, in agreement with experimental measurements. The emission spectra's dependence on individual layer thicknesses also agreed well with measurements. Approaches to simulate and improve the light emission intensity from these OLEDs, in particular for white OLEDs, are discussed.

Two-In-One Method for Graphene Transfer: Simplified Fabrication Process for Organic Light-Emitting Diodes.

Science.gov (United States)

Liu, Lihui; Shang, Wenjuan; Han, Chao; Zhang, Qing; Yao, Yao; Ma, Xiaoqian; Wang, Minghao; Yu, Hongtao; Duan, Yu; Sun, Jie; Chen, Shufen; Huang, Wei

2018-02-28

Graphene as one of the most promising transparent electrode materials has been successfully applied in organic light-emitting diodes (OLEDs). However, traditional poly(methyl methacrylate) (PMMA) transfer method usually results in hardly removed polymeric residues on the graphene surface, which induces unwanted leakage current, poor diode behavior, and even device failure. In this work, we proposed a facile and efficient two-in-one method to obtain clean graphene and fabricate OLEDs, in which the poly(9,9-di-n-octylfluorene-alt-(1,4-phenylene-(4-sec-butylphenyl)imino)-1,4-phenylene) (TFB) layer was inserted between the graphene and PMMA film both as a protector during the graphene transfer and a hole-injection layer in OLEDs. Finally, green OLED devices were successfully fabricated on the PMMA-free graphene/TFB film, and the device luminous efficiency was increased from 64.8 to 74.5 cd/A by using the two-in-one method. Therefore, the proposed two-in-one graphene transfer method realizes a high-efficient graphene transfer and device fabrication process, which is also compatible with the roll-to-roll manufacturing. It is expected that this work can enlighten the design and fabrication of the graphene-based optoelectronic devices.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

Science.gov (United States)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Design of passive coolers for light-emitting diode lamps using topology optimisation

DEFF Research Database (Denmark)

Alexandersen, Joe; Sigmund, Ole; Meyer, Knud Erik

2018-01-01

Topology optimised designs for passive cooling of light-emitting diode (LED) lamps are investigated through extensive numerical parameter studies. The designs are optimised for either horizontal or vertical orientations and are compared to a lattice-fin design as well as a simple parameter......, while maintaining low sensitivity to orientation. Furthermore, they exhibit several defining features and provide insight and general guidelines for the design of passive coolers for LED lamps....

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Exciplex elimination in an organic light-emitting diode based on a fluorene derivative by inserting 4,4'-N,N'-dicarbazole-biphenylinto donor/acceptor interface

International Nuclear Information System (INIS)

Wei, Zhang; Jun-Sheng, Yu; Jiang, Huang; Ya-Dong, Jiang; Qing, Zhang; Kang-Li, Cao

2010-01-01

Organic light-emitting diodes (OLEDs) composed of a novel fluorene derivative of 2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)-6,7-difluoroquinoxaline (F2Py) were fabricated, and exciplex emission was observed in the device. To depress the exciplex in an OLED for pure colour light emission, 4, 4'-N,N'-dicarbazole-biphenyl (CBP) was inserted as a separator at the donor/acceptor interface. It was found that the device without the CBP layer emitted a green light peaking at 542 nm from the exciplex and a shoulder peak about 430 nm from F2Py. In contrast, the OLED with CBP layer emitted only a blue light peak at about 432 nm from F2Py. Device efficiencies were calculated by a simulative mode in an injection controlled type mechanism, and the results showed that exciplexes yield much lower quantum efficiency than excitons. The device with CBP has a higher power efficiency as no exciplex was present. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Design and geometry of hybrid white light-emitted diodes for efficient energy transfer from the quantum well to the nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii; Huck, Alexander; Shirazi, Roza

2013-01-01

We demonstrate light color conversion in patterned InGaN light-emitting diodes (LEDs), which is enhanced via nonradiative exciton resonant energy transfer (RET) from the electrically driven diode to colloidal semiconductor nanocrystals (NCs). Patterning of the diode is essential for the coupling...... between a quantum well (QW) and NCs, because the distance between the QW and NCs is a main and very critical factor of RET. Moreover, a proper design of the pattern can enhance light extraction....

Formulating CdSe quantum dots for white light-emitting diodes with high color rendering index

International Nuclear Information System (INIS)

Li, Fei; Li, Wan-Nan; Fu, Shao-Yun; Xiao, Hong-Mei

2015-01-01

Generation of white light using CdSe quantum dots (QDs) alone presents exciting possibilities for solid state lighting technology. In this work, Cd(Ac) 2 ·2H 2 O and Na 2 SeSO 3 are used as precursors to synthesize CdSe-QDs with an average diameter ranging from 2.77 to 4.65 nm at the low temperature from 60 to 180 °C. Smaller CdSe-QDs with an average diameter of 2.29 nm are got by an oxidation etching process using H 2 O 2 as oxidant. The structural and optical properties of these QDs are investigated and proper formulation of CdSe QDs with various sizes is carefully designed to achieve white light with a high color rendering index (CRI). It is observed for the first time that the as-prepared white light-emitting diodes from single CdSe-QDs show the Commission Inernationale del’Eclairage coordinate (CIE) of (0.30,0.34) very close to that (0.33,0.33) of pure white light and a high CRI of 84. Owing to these advantages, the as-prepared white light-emitting diodes from a single compound are promising for lighting applications. - Highlights: • CdSe-quantum dots (QDs) with a continuously changing size from 2.31 to 4.74 nm are prepared. • The obtained CdSe-QDs emit lights with tunable colors in the whole visible range. • The obtained mixture sample generates white light with a high color rendering index of 84. • The sample yields white light with the CIE coordinate (0.30, 0.34) very close to that of pure white light

Electroluminescence enhancement for near-ultraviolet light emitting diodes with graphene/AZO-based current spreading layers

DEFF Research Database (Denmark)

Lin, Li; Ou, Yiyu; Zhu, Xiaolong

LEDs) have attracted significant research interest due to their intensive applications in various areas where indium tin oxide (ITO) is one of the most widely employed transparent conductive materials for NUV LEDs. Compared to ITO, indium-free aluminum-doped zinc oxide (AZO) has similar electrical......Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer. GaN-based near-ultraviolet light emitting diodes (NUV...... with a new type of current spreading layer (CSL) which combines AZO and a single-layer graphene (SLG) as an effective transparent CSL [1]. In the present work, LEDs with solo AZO CSL in Fig.1(a) and SLG/Ni/AZO-based CSL in Fig.1(b) were both fabricated for EL comparison. Standard mesa fabrication including...

Near-field photometry for organic light-emitting diodes

Science.gov (United States)

Li, Rui; Harikumar, Krishnan; Isphording, Alexandar; Venkataramanan, Venkat

2013-03-01

Organic Light Emitting Diode (OLED) technology is rapidly maturing to be ready for next generation of light source for general lighting. The current standard test methods for solid state lighting have evolved for semiconductor sources, with point-like emission characteristics. However, OLED devices are extended surface emitters, where spatial uniformity and angular variation of brightness and colour are important. This necessitates advanced test methods to obtain meaningful data for fundamental understanding, lighting product development and deployment. In this work, a near field imaging goniophotometer was used to characterize lighting-class white OLED devices, where luminance and colour information of the pixels on the light sources were measured at a near field distance for various angles. Analysis was performed to obtain angle dependent luminous intensity, CIE chromaticity coordinates and correlated colour temperature (CCT) in the far field. Furthermore, a complete ray set with chromaticity information was generated, so that illuminance at any distance and angle from the light source can be determined. The generated ray set is needed for optical modeling and design of OLED luminaires. Our results show that luminance non-uniformity could potentially affect the luminaire aesthetics and CCT can vary with angle by more than 2000K. This leads to the same source being perceived as warm or cool depending on the viewing angle. As OLEDs are becoming commercially available, this could be a major challenge for lighting designers. Near field measurement can provide detailed specifications and quantitative comparison between OLED products for performance improvement.

Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

Science.gov (United States)

Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

2017-06-20

The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

Science.gov (United States)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

2017-11-01

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

Organic light-emitting diodes with a spacer enhanced exciplex emission

Science.gov (United States)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

A Novel trans-1-(9-Anthryl)-2-phenylethene Derivative Containing a Phenanthroimidazole Unit for Application in Organic Light-Emitting Diodes.

Science.gov (United States)

Zhou, Nonglin; Wang, Shirong; Xiao, Yin; Li, Xianggao

2018-01-04

Aryl-substituted phenanthroimidazoles (PIs) have attracted tremendous attention in the field of organic light-emitting diodes (OLEDs), because they are simple to synthesize and have excellent thermal properties, high photoluminescence quantum yields (PLQYs), and bipolar properties. Herein, a novel blue-green emitting material, (E)-2-{4'-[2-(anthracen-9-yl)vinyl]-[1,1'-biphenyl]-4-yl}-1-phenyl-1H-phenanthro[9,10-d]imidazole (APE-PPI), containing a t-APE [1-(9-anthryl)-2-phenylethene] core and a PI moiety was designed and synthesized. Owing to the PI skeleton, APE-PPI possesses high thermal stability and a high PLQY, and the compound exhibits bipolar transporting characteristics, which were identified by single-carrier devices. Nondoped blue-green OLEDs with APE-PPI as the emitting layer show emission at λ=508 nm, a full width at half maximum of 82 nm, a maximum brightness of 9042 cd m -2 , a maximum current efficiency of 2.14 cd A -1 , and Commission Internationale de L'Eclairage (CIE) coordinates of (0.26, 0.55). Furthermore, a white OLED (WOLED) was fabricated by employing APE-PPI as the blue-green emitting layer and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) doped in tris-(8-hydroxyquinolinato)aluminum (Alq 3 ) as the red-green emitting layer. This WOLED exhibited a maximum brightness of 10029 cd m -2 , a maximum current efficiency of 16.05 cd A -1 , CIE coordinates of (0.47, 0.47), and a color rendering index (CRI) of 85. The high performance of APE-PPI-based devices suggests that the t-APE and PI combination can potentially be used to synthesize efficient electroluminescent materials for WOLEDs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NARCIS (Netherlands)

Abbaszadeh, D.; Nicolai, H.T.; Crəciun, N.I.; Blom, P.W.M.

2014-01-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N,N,N′,N′ tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Transparent Heat-Resistant PMMA Copolymers for Packing Light-Emitting Diode Materials

Directory of Open Access Journals (Sweden)

Shu-Ling Yeh

2015-07-01

Full Text Available Transparent and heat-resistant poly(methyl methacrylate copolymers were synthesized by bulk polymerizing methyl methacrylate (MMA, isobornyl methacrylate (IBMA, and methacrylamide (MAA monomers. Copolymerization was performed using a chain transfer agent to investigate the molecular weight changes of these copolymers, which exhibited advantages including a low molecular weight distribution, excellent optical properties, high transparency, high glass transition temperature, low moisture absorption, and pellets that can be readily mass produced by using extrusion or jet injection for packing light-emitting diode materials.

Low-driving-voltage and colour-stable white organic light-emitting diodes with a cross-patterned multi-emissive layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, O Ok; Park, Jae Kyun; Chin, Byung Doo

2012-01-01

We have applied a simple cross-patterning technique for the fabrication of phosphorescent white organic light-emitting diodes (WOLEDs) with red, green and blue (RGB) emitters; the resulting device has relatively low driving voltage and high colour stability. The selectively cross-patterned multicolour emitting layer (EML) was easily prepared using a metal mask without an alignment process. Not only was the characteristic of low driving voltage obtained but also of improved colour stability, which can be ascribed to the simplified stack of the EML and the corresponding suppression of the biased shift in the recombination zone. The spatial distribution and variation of the stacked EML structure could explain the origin of the robust white emission. Compared with the conventional WOLED with a RGB simple stack, the cross-patterned multi-EML device showed a slight change in colour coordinates in the luminance range 100-8000 cd m -2 , with a decrease in the driving voltage of 0.5-2.0 V, while the luminous efficiency was maintained. (paper)

Luminescence properties of novel red-emitting phosphor InNb1-xPxO4:Eu3+ for white light emitting-diodes

Directory of Open Access Journals (Sweden)

Tang An

2015-06-01

Full Text Available InNb1-xPxO4:Eu3+ red phosphors were synthesized by solid-state reaction and their luminescence properties were also studied through photoluminescence spectra. The excitation and emission spectra make it clear that the as-prepared phosphors can be effectively excited by near-ultraviolet (UV 394 nm light and blue 466 nm light to emit strong red light located at 612 nm, due to the Eu3+ transition of 5D0 → 7F2. The luminescence intensity is dependent on phosphorus content, and it achieves the maximum at x = 0.4. Excessive phosphorus in the phosphors can result in reduction of luminescence intensity owing to concentration quenching.With the increasing content of phosphorus, the phosphors are prone to emit pure red light. This shows that the InNb1.6P0.4O4:0.04Eu3+ phosphor may be a potential candidate as a red component for white light emitting-diodes.

High-performance organic light-emitting diodes comprising ultrastable glass layers

Science.gov (United States)

Rodríguez-Viejo, Javier

2018-01-01

Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn; Liao, Liang-Sheng, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215123 (China)

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO{sub 2} film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

Tandem organic light-emitting diodes with buffer-modified C60/pentacene as charge generation layer

Science.gov (United States)

Wang, Zhen; Zheng, Xin; Liu, Fei; Wang, Pei; Gan, Lin; Wang, Jing-jing

2017-09-01

Buffer-modified C60/pentacene as charge generation layer (CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes (OLEDs) with multiple identical emissive units and using buffer-modified C60/pentacene organic semiconductor heterojunction (OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A-1 at 30 mA·cm-2 can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs2CO3/Al is an effective buffer for C60/pentacene-based tandem OLEDs.

Light emitting diodes as an alternative ambient illumination source in photolithography environment

DEFF Research Database (Denmark)

Corell, Dennis Dan; Ou, Haiyan; Dam-Hansen, Carsten

2009-01-01

We explored an alternative light emitting diode (LED) - based solution to replace the existing yellow fluorescent light tubes (YFT) used in photolithography rooms. A no-blue LED lamp was designed and a prototype was fabricated. For both solutions, the spectral power distribution (SPD) was measured......, the colorimetric values were calculated, and a visual comparison using Gretagmacbeth colorcharts was performed. The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI). Furthermore, the LED bulb was tested in a photolithography room...... and there was no exposure to the photoresist even after 168 hours illumination....

Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

Energy Technology Data Exchange (ETDEWEB)

Wang, Peng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Tieqiang [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

2016-08-08

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

International Nuclear Information System (INIS)

Wang, Peng; Bai, Xue; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu; Zhang, Tieqiang

2016-01-01

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Jong, de M.P.; Janssen, F.J.J.; Sturm, J.M.; IJzendoorn, van L.J.; Denier van der Gon, A.W.; Voigt, de M.J.A.; Brongersma, H.H.

2001-01-01

We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently,

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

OpenAIRE

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced t...

Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

International Nuclear Information System (INIS)

Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

2009-01-01

Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

International Nuclear Information System (INIS)

Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

2001-01-01

A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

Is it viable to improve light output efficiency by nano-light-emitting diodes?

Energy Technology Data Exchange (ETDEWEB)

Wang, Chao-Hung; Huang, Yu-Wen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Shang-En [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China); Liu, Chuan-Pu, E-mail: cpliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-12-02

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 10{sup 9} cm{sup −2} with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Host-free, yellow phosphorescent material in white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng, E-mail: osolomio.ac89g@nctu.edu.t [Material and Chemical Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310 (China)

2010-11-10

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W{sup -1} at a practical brightness of 1000 cd m{sup -2} with Commission Internationale d'Echariage coordinates (CIE{sub x,y}) of (0.37, 0.47) was achieved. (fast track communication)

Warm-White-Light-Emitting Diode Based on a Dye-Loaded Metal-Organic Framework for Fast White-Light Communication.

Science.gov (United States)

Wang, Zhiye; Wang, Zi; Lin, Bangjiang; Hu, XueFu; Wei, YunFeng; Zhang, Cankun; An, Bing; Wang, Cheng; Lin, Wenbin

2017-10-11

A dye@metal-organic framework (MOF) hybrid was used as a fluorophore in a white-light-emitting diode (WLED) for fast visible-light communication (VLC). The white light was generated from a combination of blue emission of the 9,10-dibenzoate anthracene (DBA) linkers and yellow emission of the encapsulated Rhodamine B molecules. The MOF structure not only prevents dye molecules from aggregation-induced quenching but also efficiently transfers energy to the dye for dual emission. This light-emitting material shows emission lifetimes of 1.8 and 5.3 ns for the blue and yellow components, respectively, which are significantly shorter than the 200 ns lifetime of Y 3 Al 5 O 12 :Ce 3+ in commercial WLEDs. The MOF-WLED device exhibited a modulating frequency of 3.6 MHz for VLC, six times that of commercial WLEDs.

Optoelectronic properties of a novel fluorene derivative for organic light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Yu, Junsheng; Lou, Shuangling; Qian, Jincheng; Jiang, Yadong [University of Electronic Science and Technology of China (UESTC), State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, Chengdu (China); Zhang, Qing [Shanghai Jiaotong University, Department of Polymer Science, School of Chemistry and Chemical Technology, Shanghai (China)

2009-03-15

We report the optoelectronic properties of a novel fluorene derivative of 6,6'-(9H-fluoren-9,9-diyl)bis(2,3-bis (9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ) used for organic light-emitting diode. UV-Vis absorption, photoluminescence (PL) and electroluminescence (EL) spectra of BFLBBFLYQ and the blend doped with N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-di- amine (TPD) in solid state and in solution were investigated. The results showed that BFLBBFLYQ had a PL peak at 451 nm in solid and solution states and an EL peak at 483 nm with a broad emission band, resulting from fluorenone defects. Exciplex emission was observed in BFLBBFLYQ-TPD blend solid state with a green emission peaking at 530 nm. Also the blend in solution showed solvatochromism in polarity solvent upon UV irradiation. A new absorption band appeared at around 470 nm of BFLBBFLYQ-TPD blend in chloroform solution, and disappeared when diluted in absorption spectrum. Meanwhile, a low energy emission band from 530 to 580 nm appeared and increased with material concentration and UV irradiation time. (orig.)

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

Science.gov (United States)

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Response of conifer species from three latitudinal populations to light spectra generated by light-emitting diodes and high-pressure sodium lamps

Science.gov (United States)

Kent G. Apostol; Kas Dumroese; Jeremy Pinto; Anthony S. Davis

2015-01-01

Light-emitting diode (LED) technology shows promise for supplementing photosynthetically active radiation (PAR) in forest nurseries because of the potential reduction in energy consumption and an ability to supply discrete wavelengths to optimize seedling growth. Our objective was to examine the effects of light spectra supplied by LED and traditional high-pressure...

Tandem white organic light-emitting diodes adopting a C60:rubrene charge generation layer

International Nuclear Information System (INIS)

Bi Wen-Tao; Wu Xiao-Ming; Hua Yu-Lin; Sun Jin-E; Xiao Zhi-Hui; Wang Li; Yin Shou-Gen

2014-01-01

Organic bulk heterojunction fullerence (C 60 ) doped 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) as the high quality charge generation layer (CGL) with high transparency and superior charge generating capability for tandem organic light emitting diodes (OLEDs) is developed. This CGL shows excellent optical transparency about 90%, which can reduce the optical interference effect formed in tandem OLEDs. There is a stable white light emission including 468 nm and 500 nm peaks from the blue emitting layer and 620 nm peak from the red emitting layer in tandem white OLEDs. A high efficiency of about 17.4 cd/A and CIE coordinates of (0.40, 0.35) at 100 cd/m 2 and (0.36, 0.34) at 1000 cd/m 2 have been demonstrated by employing the developed CGL, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Utilization of solvothermally grown InP/ZnS quantum dots as wavelength converters for fabrication of white light-emitting diodes.

Science.gov (United States)

Jang, Eun-Pyo; Yang, Heesun

2013-09-01

This work reports on a simple solvothermal synthesis of InP/ZnS core/shell quantum dots (QDs) using a much safer and cheaper phosphorus precursor of tris(dimethylamino)phosphine than the most popularly chosen tris(trimethylsilyl)phosphine. The band gap of InP QDs is facilely controlled by varying the solvothermal core growth time (4 vs. 6 h) with a fixed temperature of 150 degrees C, and the successive solvothermal ZnS shelling at 220 degrees C for 6 h results in green- and yellow-emtting InP/ZnS QD with emission quantum yield of 41-42%. The broad size distribution of as-synthesized InP/ZnS QDs, which appears to be inherent in the current solvothermal approach, is improved by a size-selective sorting procedure, and the emission properties of the resulting size-sorted QD fractions are investigated. To produce white emission for general lighting source, a blue light-emitting diode (LED) is combined with non-size-soroted green or yellow QDs as wavelength converters. Furthermore, the QD-LED that includes a blend of green and yellow QDs is fabricated to generate a white lighting source with an enhanced color rendering performance, and its electroluminescent properties are characterized in detail.

InP/ZnS nanocrystals for colour conversion in white light emitting diodes

DEFF Research Database (Denmark)

Shirazi, Roza

In this work a comprehensive study of a colloidal InP/ZnS nanocrystals (NC) as the colour conversion material for white light emitting diodes (WLED) is shown. Studied nanocrystals were synthesised by wet chemistry using one pot, hot injection method. A quantum efficiency (QE) of photoluminescence......, radiative and non-radiative recombination rates were determined and QE of 63% for the population of NCs that emit light was derived. A search for source of exciton losses in bright nanocrystals temperature resolved TRPL was studied and it revealed carrier trapping most likely at core-shell interface as well...... as at the surface and which competes with bright and dark exciton states. A presence of long-lived dark excitons and trapped charges lead to strong Auger recombination at high (relative to the trapping times) excitation. A colour conversion efficiency of the nanocrystals upon light absorption and in a process...

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz)2

Science.gov (United States)

Tomova, R. L.; Petrova, P. K.; Stoycheva-Topalova, R. T.

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz)2) in configuration: ITO/PVK:TPD/ Zn(BTz)2 (x nm)/ Rubrene (1 nm)/ Zn(BTz)2 (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz)2 (x→ 0-15 nm) and to Zn(BTz)2/Al (x→ 70-75 nm) interfaces and shift toward emission of Zn(BTz)2 increasing the distance of Rubrene from both interfaces (x→35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

Science.gov (United States)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

Power saving regulated light emitting diode circuit

International Nuclear Information System (INIS)

Haville, G. D.

1985-01-01

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

Science.gov (United States)

Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

2015-07-28

We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

Top emitting white OLEDs

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

2009-07-01

Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

High efficiency electrophosphorescence from bilayer organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

2011-09-14

An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

2013-01-01

In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm