Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang; Song, Hai-Ying; Liu, H.Y.; Liu, Shi-Bing, E-mail: sbliu@bjut.edu.cn

2017-07-12

Highlights: • Proposed a valid mechanism of high harmonic generation by laser grating target interaction: oscillation of equivalent electric dipole (OEED). • Found that there also exist harmonic emission at large emission angle but not just near-surface direction as the former researches had pointed out. • Show the process of the formation and motion of electron bunches at the grating-target surface irradiating with femtosecond laser pulse. - Abstract: We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Iridescence in Meat Caused by Surface Gratings

Directory of Open Access Journals (Sweden)

Ali Kemal Yetisen

2013-11-01

Full Text Available The photonic structure of cut muscle tissues reveals that the well-ordered gratings diffract light, producing iridescent colours. Cut fibrils protruding from the muscle surface create a two-dimensional periodic array, which diffract light at specific wavelengths upon illumination. However, this photonic effect misleads consumers in a negative way to relate the optical phenomenon with the quality of the product. Here we discuss the fundamentals of this optical phenomenon and demonstrate a methodology for quantitatively measuring iridescence caused by diffraction gratings of muscle tissue surface of pork (Sus scrofa domesticus using reflection spectrophotometry. Iridescence was discussed theoretically as a light phenomenon and spectral measurements were taken from the gratings and monitored in real time during controlled drying. The findings show that the intensity of diffraction diminishes as the surface grating was dried with an air flow at 50 °C for 2 min while the diffracted light wavelength was at 585 ± 9 nm. Our findings indicate that the diffraction may be caused by a blazed surface grating. The implications of the study include providing guidelines to minimise the iridescence by altering the surface microstructure, and in consequence, removing the optical effect.

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Science.gov (United States)

Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

2017-07-01

We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Ultra-broadband and wide-angle perfect absorber based on composite metal-semiconductor grating

Science.gov (United States)

Li, Xu; Wang, Zongpeng; Hou, Yumin

2018-01-01

In this letter, we present an ultra-broadband and wide-angle perfect absorber based on composite Ge-Ni grating. Near perfect absorption above 90% is achieved in a wide frequency range from 150 nm to 4200 nm, which covers almost the full spectrum of solar radiation. The absorption keeps robust in a wide range of incident angle from 0º to 60º. The upper triangle Ge grating works as an antireflection coating. The lower Ni grating works as a reflector and an effective energy trapper. The guided modes inside Ge grating are excited due to reflection of the lower Ni grating surface. In longer wavelength band, gap surface plasmons (GSPs) in the Ni grating are excited and couple with the guided modes inside the Ge grating. The coupled modes extend the perfect absorption band to the near-infrared region (150 nm-4200 nm). This design has potential application in photovoltaic devices and thermal emitters.

VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

CERN Document Server

2013-01-01

The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

Directory of Open Access Journals (Sweden)

P. A. Magomedova

2017-01-01

Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

Science.gov (United States)

Chen, L. Y.; Loferski, J. J.

1975-01-01

Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

Launching focused surface plasmon in circular metallic grating

International Nuclear Information System (INIS)

Kumar, Pawan; Tripathi, V. K.; Kumar, Ashok; Shao, X.

2015-01-01

The excitation of focused surface plasma wave (SPW) over a metal–vacuum interface embedded with circular surface grating is investigated theoretically. The normally impinged radiation imparts oscillatory velocity to free electrons that beats with the surface ripple to produce a nonlinear current, driving the SPW. As SPW propagates, it gets focused. The focused radiation has a maximum at the centre of grating and decreases beyond the centre due to diffraction. The amplitude of SPW is fixed for a given groove depth and increases rapidly around the resonance frequency. The intensity at the focus point depends on dimensions of the grating. It increases with the radiation frequency approaching the surface plasmon resonance. The scheme has potential applications for photonic devices and surface enhanced Raman scattering

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Double-Grating Displacement Structure for Improving the Light Extraction Efficiency of LEDs

Directory of Open Access Journals (Sweden)

Zhibin Wang

2012-01-01

Full Text Available To improve the light extraction efficiency of light-emitting diodes (LEDs, grating patterns were etched on GaN and silver film surfaces. The grating-patterned surface etching enabled the establishment of an LED model with a double-grating displacement structure that is based on the surface plasmon resonance principle. A numerical simulation was conducted using the finite difference time domain method. The influence of different grating periods for GaN surface and silver film thickness on light extraction efficiency was analyzed. The light extraction efficiency of LEDs was highest when the grating period satisfied grating coupling conditions. The wavelength of the highest value was also close to the light wavelength of the medium. The plasmon resonance frequencies on both sides of the silver film were affected by silver film thickness. With increasing film thickness, plasmon resonance frequency tended toward the same value and light extraction efficiency reached its maximum. When the grating period for the GaN surface was 365 nm and the silver film thickness was 390 nm, light extraction efficiency reached a maximum of 55%.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Excitation of surface electromagnetic waves in a graphene-based Bragg grating.

Science.gov (United States)

Sreekanth, Kandammathe Valiyaveedu; Zeng, Shuwen; Shang, Jingzhi; Yong, Ken-Tye; Yu, Ting

2012-01-01

Here, we report the fabrication of a graphene-based Bragg grating (one-dimensional photonic crystal) and experimentally demonstrate the excitation of surface electromagnetic waves in the periodic structure using prism coupling technique. Surface electromagnetic waves are non-radiative electromagnetic modes that appear on the surface of semi-infinite 1D photonic crystal. In order to fabricate the graphene-based Bragg grating, alternating layers of high (graphene) and low (PMMA) refractive index materials have been used. The reflectivity plot shows a deepest, narrow dip after total internal reflection angle corresponds to the surface electromagnetic mode propagating at the Bragg grating/air boundary. The proposed graphene based Bragg grating can find a variety of potential surface electromagnetic wave applications such as sensors, fluorescence emission enhancement, modulators, etc.

Strong Exciton-photon Coupling in Semiconductor Microcavities

DEFF Research Database (Denmark)

Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

1999-01-01

The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

Diffraction efficiency calculations of polarization diffraction gratings with surface relief

Science.gov (United States)

Nazarova, D.; Sharlandjiev, P.; Berberova, N.; Blagoeva, B.; Stoykova, E.; Nedelchev, L.

2018-03-01

In this paper, we evaluate the optical response of a stack of two diffraction gratings of equal one-dimensional periodicity. The first one is a surface-relief grating structure; the second, a volume polarization grating. This model is based on our experimental results from polarization holographic recordings in azopolymer films. We used films of commercially available azopolymer (poly[1-[4-(3-carboxy-4-hydroxyphenylazo) benzenesulfonamido]-1,2-ethanediyl, sodium salt]), shortly denoted as PAZO. During the recording process, a polarization grating in the volume of the material and a relief grating on the film surface are formed simultaneously. In order to evaluate numerically the optical response of this “hybrid” diffraction structure, we used the rigorous coupled-wave approach (RCWA). It yields stable numerical solutions of Maxwell’s vector equations using the algebraic eigenvalue method.

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

International Nuclear Information System (INIS)

Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

2007-01-01

A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

Calculation of Smith-Purcell radiation from a volume strip grating

International Nuclear Information System (INIS)

Kube, G.

2005-01-01

Smith-Purcell radiation is generated by a charged particle beam passing close to the surface of a diffraction grating. Experimental investigations show a strong dependency of the emitted radiation intensity on the form of the grating profile. This influence is expressed by the radiation factor which is a measure of the grating efficiency, in close analogy to reflection coefficients of optical grating theories. The radiation factor depends on beam energy and observation geometry. Up to now calculations for radiation factors exist for lamellar, sinusoidal and echelette-type grating profiles. In this paper, calculations of Smith-Purcell radiation factors for volume strip gratings which are separated by vacuum gaps are presented. They are based on the modal expansion method and restricted to perfectly conducting grating surfaces and to electron trajectories perpendicular to the grating grooves. An infinite system of coupled linear algebraic equations for the scattered and the transmitted wave amplitudes is derived by imposing the continuity condition at the open end of the grooves, and by the boundary conditions at the remaining part of the interface. Numerical results are presented and discussed in view of using Smith-Purcell radiation for particle beam diagnostic purposes

1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

DEFF Research Database (Denmark)

Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

2013-01-01

We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing...

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

Surface morphology of refractive-index waveguide gratings fabricated in polymer films

Science.gov (United States)

Dong, Yi; Song, Yan-fang; Ma, Lei; Gao, Fang-fang

2016-09-01

The characteristic modifications are reported on the surface of polymeric waveguide film in the process of volume- grating fabrication. The light from a mode-locked 76 MHz femtosecond laser with pulse duration of 200 fs and wavelength of 800 nm is focused normal to the surface of the sample. The surface morphology modifications are ascribed to a fact that surface swelling occurs during the process. Periodic micro-structure is inscribed with increasing incident power. The laser-induced swelling threshold on the grating, which is higher than that of two-photon initiated photo-polymerization (TPIP) (8 mW), is verified to be about 20 mW. It is feasible to enhance the surface smoothness of integrated optics devices for further encapsulation. The variation of modulation depth is studied for different values of incident power and scan spacing. Ablation accompanied with surface swelling appears when the power is higher. By optimizing the laser carving parameters, highly efficient grating devices can be fabricated.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Topology-optimized broadband surface relief transmission grating

DEFF Research Database (Denmark)

Andkjær, Jacob; Ryder, Christian P.; Nielsen, Peter C.

2014-01-01

We propose a design methodology for systematic design of surface relief transmission gratings with optimized diffraction efficiency. The methodology is based on a gradient-based topology optimization formulation along with 2D frequency domain finite element simulations for TE and TM polarized plane...

Surface Fluctuation Scattering using Grating Heterodyne Spectroscopy

DEFF Research Database (Denmark)

Edwards, R. V.; Sirohi, R. S.; Mann, J. A.

1982-01-01

Heterodyne photon spectroscopy is used for the study of the viscoelastic properties of the liquid interface by studying light scattered from thermally generated surface fluctuations. A theory of a heterodyne apparatus based on a grating is presented, and the heterodyne condition is given in terms...

Analysis of surface absorbed dose in X-ray grating interferometry

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhili, E-mail: wangnsrl@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China); Wu, Zhao; Gao, Kun; Wang, Dajiang; Chen, Heng; Wang, Shenghao [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China); Wu, Ziyu, E-mail: wuzy@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China); Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

2014-10-15

Highlights: • Theoretical framework for dose estimation in X-ray grating interferometry. • Potential dose reduction of X-ray grating interferometry compared to conventional radiography. • Guidelines for optimization of X-ray grating interferometry for dose-sensitive applications. • Measure to compare various existing X-ray phase contrast imaging techniques. - Abstract: X-ray phase contrast imaging using grating interferometry has shown increased contrast over conventional absorption imaging, and therefore the great potential of dose reduction. The extent of the dose reduction depends on the geometry of grating interferometry, the photon energy, the properties of the sample under investigation and the utilized detector. These factors also determine the capability of grating interferometry to distinguish between different tissues with a specified statistical certainty in a single raw image. In this contribution, the required photon number for imaging and the resulting surface absorbed dose are determined in X-ray grating interferometry, using a two-component imaging object model. The presented results confirm that compared to conventional radiography, phase contrast imaging using grating interferometry indeed has the potential of dose reduction. And the extent of dose reduction is strongly dependent on the imaging conditions. Those results provide a theoretical framework for dose estimation under given imaging conditions before experimental trials, and general guidelines for optimization of grating interferometry for those dose-sensitive applications.

Analysis of surface absorbed dose in X-ray grating interferometry

International Nuclear Information System (INIS)

Wang, Zhili; Wu, Zhao; Gao, Kun; Wang, Dajiang; Chen, Heng; Wang, Shenghao; Wu, Ziyu

2014-01-01

Highlights: • Theoretical framework for dose estimation in X-ray grating interferometry. • Potential dose reduction of X-ray grating interferometry compared to conventional radiography. • Guidelines for optimization of X-ray grating interferometry for dose-sensitive applications. • Measure to compare various existing X-ray phase contrast imaging techniques. - Abstract: X-ray phase contrast imaging using grating interferometry has shown increased contrast over conventional absorption imaging, and therefore the great potential of dose reduction. The extent of the dose reduction depends on the geometry of grating interferometry, the photon energy, the properties of the sample under investigation and the utilized detector. These factors also determine the capability of grating interferometry to distinguish between different tissues with a specified statistical certainty in a single raw image. In this contribution, the required photon number for imaging and the resulting surface absorbed dose are determined in X-ray grating interferometry, using a two-component imaging object model. The presented results confirm that compared to conventional radiography, phase contrast imaging using grating interferometry indeed has the potential of dose reduction. And the extent of dose reduction is strongly dependent on the imaging conditions. Those results provide a theoretical framework for dose estimation under given imaging conditions before experimental trials, and general guidelines for optimization of grating interferometry for those dose-sensitive applications

The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

DEFF Research Database (Denmark)

Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

2013-01-01

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

Biphotonic holographic gratings in azobenzene polyesters: Surface relief phenomena and polarization effects

DEFF Research Database (Denmark)

Sánchez, C.; Alcalá, R.; Hvilsted, Søren

2000-01-01

Biphotonic holographic gratings have been recorded in a side-chain azobenzene liquid crystalline polyester using a blue incoherent source and a He-Ne laser. Intensity gratings and the appearance of surface relief have been observed when two linearly polarized beams from a He-Ne laser are made...... to interfere on a film illuminated with blue light. Polarized holographic gratings are also created with two orthogonally circularly polarized He-Ne beams. All these gratings are stable in darkness but can be erased with blue light. (C) 2000 American Institute of Physics....

Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

International Nuclear Information System (INIS)

Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

2008-01-01

In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Spontaneous formation of optically induced surface relief gratings

International Nuclear Information System (INIS)

Leblond, H; Barille, R; Ahmadi-Kandjani, S; Nunzi, J-M; Ortyl, E; Kucharski, S

2009-01-01

We develop a model based on Fick's law of diffusion as a phenomenological description of the molecular motion, and on the coupled mode theory, to describe single-beam surface relief grating formation in azopolymer thin films. The model allows us to explain the mechanism of spontaneous patterning, and self-organization. It allows us to compute the surface relief profile and its evolution, with good agreement with experiments.

Diffraction from polarization holographic gratings with surface relief in side-chain azobenzene polyesters

DEFF Research Database (Denmark)

Naydenova, I; Nikolova, L; Todorov, T

1998-01-01

We investigate the polarization properties of holographic gratings in side-chain azobenzene polyesters in which an anisotropic grating that is due to photoinduced linear and circular birefringence is recorded in the volume of the material and a relief grating appears on the surface. A theoretical...... model is proposed to explain the experimental results, making it possible to understand the influence of the different photoinduced effects. It is shown that at low intensity the polarization properties of the diffraction at these gratings are determined by the interaction of the linear and circular...... photobirefringences, and at larger intensity the influence of the surface relief dominates the effect of the circular anisotropy. Owing to the high recording efficiency of the polyesters, the +/-1-order diffracted waves change the polarization interference pattern during the holographic recording, resulting...

80-nm-tunable high-index-contrast subwavelength grating long-wavelength VCSEL: Proposal and numerical simulations

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper; Sirbu, Alexei

2010-01-01

A widely-tunable single-mode long wavelength vertical-cavity surface-emitting laser structure employing a MEMStunable high-index-contrast subwavelength grating (HCG) is suggested and numerically investigated. A very large 80- nm linear tuning range was obtained as the HCG was actuated by -220 to ...

High efficiency grating couplers based on shared process with CMOS MOSFETs

International Nuclear Information System (INIS)

Qiu Chao; Sheng Zhen; Wu Ai-Min; Wang Xi; Zou Shi-Chang; Gan Fu-Wan; Li Le; Albert Pang

2013-01-01

Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal—oxide—semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as a gate in the CMOS metal—oxide—semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ∼ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Spontaneous formation of optically induced surface relief gratings

Energy Technology Data Exchange (ETDEWEB)

Leblond, H; Barille, R; Ahmadi-Kandjani, S; Nunzi, J-M [Laboratoire POMA, Universite d' Angers, CNRS FRE 2988, 2, Bd Lavoisier, 49045 Angers (France); Ortyl, E; Kucharski, S, E-mail: herve.leblond@univ-angers.f [Wroclaw University of Technology, Faculty of Chemistry, Department of Polymer Engineering and Technology, 50-370 Wroclaw (Poland)

2009-10-28

We develop a model based on Fick's law of diffusion as a phenomenological description of the molecular motion, and on the coupled mode theory, to describe single-beam surface relief grating formation in azopolymer thin films. The model allows us to explain the mechanism of spontaneous patterning, and self-organization. It allows us to compute the surface relief profile and its evolution, with good agreement with experiments.

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Optimization of top coupling grating for very long wavelength QWIP based on surface plasmon

Science.gov (United States)

Wang, Guodong; Shen, Junling; Liu, Xiaolian; Ni, Lu; Wang, Saili

2017-09-01

The relative coupling efficiency of two-dimensional (2D) grating based on surface plasmon for very long wavelength quantum well infrared detector is analyzed by using the three-dimensional finite-difference time domain (3D-FDTD) method algorithm. The relative coupling efficiency with respect to the grating parameters, such as grating pitch, duty ratio, and grating thickness, is analyzed. The calculated results show that the relative coupling efficiency would reach the largest value for the 14.5 μm incident infrared light when taking the grating pitch as 4.4 μm, the duty ratio as 0.325, and the grating thickness as 0.07 μm, respectively.

A study of AFM-based scratch process on polycarbonate surface and grating application

International Nuclear Information System (INIS)

Choi, Chul Hyun; Lee, Dong Jin; Sung, Jun-Ho; Lee, Min Woo; Lee, Seung-Gol; Park, Se-Geun; Lee, El-Hang; O, Beom-Hoan

2010-01-01

We report on the possibility of applying atomic force microscope (AFM) lithography to draw micro/nano-structures on the surface of a polycarbonate (PC) substrate. We also fabricated a grating structure on the PC surface using the scratch method. An AFM silicon tip coated with a diamond layer was utilized as a cutting tool to scratch the surface of the sample. In order to obtain pattern depth deeper than the control method of interaction force, we used a scanner movement method which the sample scanner moves along the Z-axis. A grating of 100 μm x 150 μm was fabricated by the step and repeat method wherein the sample stage is moved in the direction of the XY-axis. The period and the depth of the grating are 500 and 50 nm, respectively. Light of 632.8 nm wavelength was diffracted on the surface of the PC substrate.

Theoretical analysis of ridge gratings for long-range surface plasmon polaritons

DEFF Research Database (Denmark)

Søndergaard, Thomas; Bozhevolnyi, Sergey I.; Boltasseva, Alexandra

2006-01-01

Optical properties of ridge gratings for long-range surface plasmon polaritons (LRSPPs) are analyzed theoretically in a two-dimensional configuration via the Lippmann-Schwinger integral equation method. LRSPPs being supported by a thin planar gold film embedded in dielectric are considered...... to be scattered by an array of equidistant gold ridges on each side of the film designed for in-plane Bragg scattering of LRSPPs at the wavelength ~1550 nm. Out-of-plane scattering (OUPS), LRSPP transmission, reflection, and absorption are investigated with respect to the wavelength, the height of the ridges...... peak it is preferable to use longer gratings with smaller ridges compared to gratings with larger ridges, because the former result in a smaller OUPS from the grating facets than the latter. The theoretical analysis and its conclusions are supported with experimental results on the LRSPP reflection...

Surface Plasmon Polariton-Assisted Long-Range Exciton Transport in Monolayer Semiconductor Lateral Heterostructure

Science.gov (United States)

Shi, Jinwei; Lin, Meng-Hsien; Chen, Yi-Tong; Estakhri, Nasim Mohammadi; Tseng, Guo-Wei; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alã¹, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

Recently, two-dimensional (2D) semiconductor heterostructures, i.e., atomically thin lateral heterostructures (LHSs) based on transition metal dichalcogenides (TMDs) have been demonstrated. In an optically excited LHS, exciton transport is typically limited to a rather short spatial range ( 1 micron). Furthermore, additional losses may occur at the lateral interfacial regions. Here, to overcome these challenges, we experimentally implement a planar metal-oxide-semiconductor (MOS) structure by placing a monolayer of WS2/MoS2 LHS on top of an Al2O3 capped Ag single-crystalline plate. We found that the exciton transport range can be extended to tens of microns. The process of long-range exciton transport in the MOS structure is confirmed to be mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, which allows a cascaded energy transfer process. Thus, the planar MOS structure provides a platform seamlessly combining 2D light-emitting materials with plasmonic planar waveguides, offering great potential for developing integrated photonic/plasmonic functionalities.

Optimization for sinusoidal profiles in surface relief gratings ...

Indian Academy of Sciences (India)

2014-02-07

Feb 7, 2014 ... filometry [7–9] and monitoring of surface self-diffusion of solids under ultrahigh vacuum conditions [10]. In the present work, recording parameters, i.e. exposure time and deve- lopment time for fabrication of such holographic gratings have been optimized to obtain nearly perfect sinusoidal profiles in the ...

Grating-coupled surface plasmon enhanced short-circuit current in organic thin-film photovoltaic cells.

Science.gov (United States)

Baba, Akira; Aoki, Nobutaka; Shinbo, Kazunari; Kato, Keizo; Kaneko, Futao

2011-06-01

In this study, we demonstrate the fabrication of grating-coupled surface plasmon resonance (SPR) enhanced organic thin-film photovoltaic cells and their improved photocurrent properties. The cell consists of a grating substrate/silver/P3HT:PCBM/PEDOT:PSS structure. Blu-ray disk recordable substrates are used as the diffraction grating substrates on which silver films are deposited by vacuum evaporation. P3HT:PCBM films are spin-coated on silver/grating substrates. Low conductivity PEDOT:PSS/PDADMAC layer-by-layer ultrathin films deposited on P3HT:PCBM films act as the hole transport layer, whereas high conductivity PEDOT:PSS films deposited by spin-coating act as the anode. SPR excitations are observed in the fabricated cells upon irradiation with white light. Up to a 2-fold increase in the short-circuit photocurrent is observed when the surface plasmon (SP) is excited on the silver gratings as compared to that without SP excitation. The finite-difference time-domain simulation indicates that the electric field in the P3HT:PCBM layer can be increased using the grating-coupled SP technique. © 2011 American Chemical Society

Narrow-stripe broad-area lasers with distributed-feedback surface gratings as brilliant sources for high power spectral beam combining systems

Science.gov (United States)

Decker, J.; Crump, P.; Fricke, J.; Wenzel, H.; Maaβdorf, A.; Erbert, G.; Tränkle, G.

2014-03-01

Laser systems based on spectral beam combining (SBC) of broad-area (BA) diode lasers are promising tools for material processing applications. However, the system brightness is limited by the in-plane beam param- eter product, BPP, of the BA lasers, which operate with a BPP of BPP and vertical far eld angle (95% power content), μV 95. The resulting diode lasers are fabricated as mini- bars for reduced assembly costs. Gratings are integrated into the mini-bar, with each laser stripe emitting at a different wavelength. In this way, each emitter can be directed into a single bre via low-cost dielectric filters. Distributed-feedback narrow-stripe broad-area (DFB-NBA) lasers are promising candidates for these SBC sys- tems. We review here the design process and performance achieved, showing that DFB-NBA lasers with stripe width, W = 30 μm, successfully cut of higher-order lateral modes, improving BPP. Uniform, surface-etched, 80th-order Bragg gratings are used, with weak gratings essential for high e ciency. To date, such DFB-NBA sources operate with BPP BPP is half that of a DFB-BA lasers with W = 90 um. We conclude with a review of options for further performance improvements.

Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

Directory of Open Access Journals (Sweden)

Tsung-Han Tsai

2015-01-01

Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

Selective Photophysical Modification on Light-Emitting Polymer Films for Micro- and Nano-Patterning

Directory of Open Access Journals (Sweden)

Xinping Zhang

2016-02-01

Full Text Available Laser-induced cross-linking in polymeric semiconductors was utilized to achieve micro- and nano-structuring in thin films. Single- and two-photon cross-linking processes led to the reduction in both the refractive index and thickness of the polymer films. The resultant photonic structures combine the features of both relief- and phase-gratings. Selective cross-linking in polymer blend films based on different optical response of different molecular phases enabled “solidification” of the phase-separation scheme, providing a stable template for further photonic structuring. Dielectric and metallic structures are demonstrated for the fabrication methods using cross-linking in polymer films. Selective cross-linking enables direct patterning into polymer films without introducing additional fabrication procedures or additional materials. The diffraction processes of the emission of the patterned polymeric semiconductors may provide enhanced output coupling for light-emitting diodes or distributed feedback for lasers.

An ultrafast nanotip electron gun triggered by grating-coupled surface plasmons

Energy Technology Data Exchange (ETDEWEB)

Schröder, Benjamin; Sivis, Murat; Bormann, Reiner; Schäfer, Sascha; Ropers, Claus, E-mail: cropers@gwdg.de [4th Physical Institute - Solids and Nanostructures, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

2015-12-07

We demonstrate multiphoton photoelectron emission from gold nanotips induced by nanofocusing surface plasmons, resonantly excited on the tip shaft by a grating coupler. The tip is integrated into an electron gun assembly, which facilitates control over the spatial emission sites and allows us to disentangle direct grating emission from plasmon-triggered apex emission. The nanoscale source size of this electron gun concept enables highly coherent electron pulses with applications in ultrafast electron imaging and diffraction.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Surface Plasmon Polaritons on Silver Gratings for Optimal SERS Response.

Czech Academy of Sciences Publication Activity Database

Kalachyova, Y.; Mareš, D.; Lyutakov, O.; Koštejn, Martin; Lapčák, L.; Svorčík, V.

2015-01-01

Roč. 119, č. 17 (2015), s. 9506-9512 ISSN 1932-7447 Institutional support: RVO:67985858 Keywords : enhanced raman-scattering * metallic surface * relief gratings Subject RIV: CC - Organic Chemistry Impact factor: 4.509, year: 2015

Nanoimprinted reflecting gratings for long-range surface plasmon polaritons

DEFF Research Database (Denmark)

Pedersen, Rasmus Haugstrup; Boltasseva, Alexandra; Johansen, Dan Mario

2007-01-01

We present a novel design, fabrication, and characterization of reflecting gratings for long-range surface plasmon polaritons (LR-SPPs) at telecom wavelengths. LR-SPP waveguides consisting of a thin (12 nm) gold film embedded in a thick (45 μm) layer of dielectric polymer cladding are structured...

Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Tallarida, M.

2005-05-15

This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

Birefringence Bragg Binary (3B) grating, quasi-Bragg grating and immersion gratings

Science.gov (United States)

Ebizuka, Noboru; Morita, Shin-ya; Yamagata, Yutaka; Sasaki, Minoru; Bianco, Andorea; Tanabe, Ayano; Hashimoto, Nobuyuki; Hirahara, Yasuhiro; Aoki, Wako

2014-07-01

A volume phase holographic (VPH) grating achieves high angular dispersion and very high diffraction efficiency for the first diffraction order and for S or P polarization. However the VPH grating could not achieve high diffraction efficiency for non-polarized light at a large diffraction angle because properties of diffraction efficiencies for S and P polarizations are different. Furthermore diffraction efficiency of the VPH grating extinguishes toward a higher diffraction order. A birefringence binary Bragg (3B) grating is a thick transmission grating with optically anisotropic material such as lithium niobate or liquid crystal. The 3B grating achieves diffraction efficiency up to 100% for non-polarized light by tuning of refractive indices for S and P polarizations, even in higher diffraction orders. We fabricated 3B grating with liquid crystal and evaluated the performance of the liquid crystal grating. A quasi-Bragg (QB) grating, which consists long rectangle mirrors aligned in parallel precisely such as a window shade, also achieves high diffraction efficiency toward higher orders. We fabricated QB grating by laminating of silica glass substrates and glued by pressure fusion of gold films. A quasi-Bragg immersion (QBI) grating has smooth mirror hypotenuse and reflector array inside the hypotenuse, instead of step-like grooves of a conventional immersion grating. An incident beam of the QBI grating reflects obliquely at a reflector, then reflects vertically at the mirror surface and reflects again at the same reflector. We are going to fabricate QBI gratings by laminating of mirror plates as similar to fabrication of the QB grating. We will also fabricate silicon and germanium immersion gratings with conventional step-like grooves by means of the latest diamond machining methods. We introduce characteristics and performance of these gratings.

Surface passivation process of compound semiconductor material using UV photosulfidation

Science.gov (United States)

Ashby, Carol I. H.

1995-01-01

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

A size selective porous silicon grating-coupled Bloch surface and sub-surface wave biosensor.

Science.gov (United States)

Rodriguez, Gilberto A; Ryckman, Judson D; Jiao, Yang; Weiss, Sharon M

2014-03-15

A porous silicon (PSi) grating-coupled Bloch surface and sub-surface wave (BSW/BSSW) biosensor is demonstrated to size selectively detect the presence of both large and small molecules. The BSW is used to sense large immobilized analytes at the surface of the structure while the BSSW that is confined inside but near the top of the structure is used to sensitively detect small molecules. Functionality of the BSW and BSSW modes is theoretically described by dispersion relations, field confinements, and simulated refractive index shifts within the structure. The theoretical results are experimentally verified by detecting two different small chemical molecules and one large 40 base DNA oligonucleotide. The PSi-BSW/BSSW structure is benchmarked against current porous silicon technology and is shown to have a 6-fold higher sensitivity in detecting large molecules and a 33% improvement in detecting small molecules. This is the first report of a grating-coupled BSW biosensor and the first report of a BSSW propagating mode. © 2013 Published by Elsevier B.V.

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Semiconductor crystal high resolution imager

Science.gov (United States)

Levin, Craig S. (Inventor); Matteson, James (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

The application of diffraction grating in the design of virtual reality (VR) system

Science.gov (United States)

Chen, Jiekang; Huang, Qitai; Guan, Min

2017-10-01

Virtual Reality (VR) products serve for human eyes ultimately, and the optical properties of VR optical systems must be consistent with the characteristic of human eyes. The monocular coaxial VR optical system is simulated in ZEMAX. A diffraction grating is added to the optical surface next to the eye, and the lights emitted from the diffraction grating are deflected, which can forming an asymmetrical field of view(FOV). Then the lateral chromatic aberration caused by the diffraction grating was corrected by the chromatic dispersion of the prism. Finally, the aspheric surface was added to further optimum design. During the optical design of the system, how to balance the dispersion of the diffraction grating and the prism is the main problem. The balance was achieved by adjusting the parameters of the grating and the prism constantly, and then using aspheric surfaces finally. In order to make the asymmetric FOV of the system consistent with the angle of the visual axis, and to ensure the stereo vision area clear, the smaller half FOV of monocular system is required to reach 30°. Eventually, a system with asymmetrical FOV of 30°+40° was designed. In addition, the aberration curve of the system was analyzed by ZEMAX, and the binocular FOV was calculated according to the principle of binocular overlap. The results show that the asymmetry of FOV of VR monocular optical system can fit to human eyes and the imaging quality match for the human visual characteristics. At the same time, the diffraction grating increases binocular FOV, which decreases the requirement for the design FOV of monocular system.

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

KAUST Repository

Sun, Haiding

2017-12-19

Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.

Characterization of metal-functionalized flax orbitide as a new candidate for light-emitting semiconductor

International Nuclear Information System (INIS)

Bauer, Robert; Bazylewski, Paul; Chang, Gap Soo; Jadhav, Pramodkumar; Shen, Jianheng; Okinyo-Owiti, Denis Paskal; Reaney, Martin; Yang, Jian; Sammynaiken, Ramaswami

2015-01-01

Organic materials display promise in numerous electronic applications, complimentary to traditional semi-conducting materials. Cyclolinopeptides show promise in light-emitting applications as an organic semiconductor. Photoluminescence measurements indicate charge transfer between the peptide and the metal, resulting in an increase in intensity of the emission from around the metal in the Cyclolinopeptide complex. Complementary X-ray absorption near-edge spectroscopy (XANES) shows a change in occupation of energy states in the peptide when complexed with the metal, indicating charge transfer, but peak positions show the peptide is not chemically changed by the metal. Combining X-ray emission and XANES provides element specific partial density of states, to estimate the element specific energy gap which is the proposed emission range for the peptide material. Organic light emitting diode devices have been fabricated, although no measurable emission has been seen as of yet. The devices have diode like current-voltage characteristics showing the peptide is semi-conducting with a threshold voltage of approximately 2.5 V. (paper)

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

2018-01-01

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien

2018-04-04

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Interactions between excitation and extraction modes in an organic-based plasmon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Chiu, Nan-Fu, E-mail: nfchiu@ntnu.edu.tw [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Le Ster, Maxime [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Material Sciences and Engineering, Institut National des Sciences Appliquées de Rennes, Rennes 35708 (France); Yang, Cheng-Du [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Tseng, Ming-Hung; Tsai, Feng-Yu [Department of Material Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2015-03-30

Highlights: • Directional emission properties give rise to a spectral band-gap response enhancement. • The subsequent emission intensity can increase by up to 3.5 times. • FWHM of approximately 60 nm in a defined direction is achieved. • SP coupling rate is approximately 80% on the metal grating structure. - Abstract: This study demonstrates the feasibility of enhancing an organic-based plasmon-emitting diode on the directional light beaming efficiency by near-field surface plasmon polaritons (SPPs) in both metal grating and polymer grating nanostructures. The interaction between organic/metal and PR/metal interfaces to cause SPPs can facilitate specific directional emission. Directional emission properties give rise to a spectral band-gap response enhancement. Our results also verify that efficient surface plasmon grating coupled emissions (SPGCEs) can improve directionality under index-mediated tuning. Experimental results indicate SP decoupling emission in the visible light. The subsequent emission intensity can increase by up to 3.5 times. Moreover, a narrow FWHM of approximately 60 nm in a defined direction is achieved, and an SP coupling rate is approximately 80% on the metal grating structure. The proposed method is highly promising for use as an active plasmonic emitter and discoloration biosensors with enhanced SPPs resonance energy, owing to interactions with the organic/metal nanostructure.

Influence of Surface Geometry of Grating Substrate on Director in Nematic Liquid Crystal Cell

International Nuclear Information System (INIS)

Ye Wenjiang; Xing Hongyu; Yang Guochen; Zhang Zhidong; Sun Yubao; Chen Guoying; Xuan Li

2011-01-01

The director in nematic liquid crystal cell with a weak anchoring grating substrate and a strong anchoring planar substrate is relative to the coordinates x and z. The influence of the surface geometry of the grating substrate in the cell on the director profile is numerically simulated using the two-dimensional finite-difference iterative method under the condition of one elastic constant approximation and zero driven voltage. The deepness of groove and the cell gap affect the distribution of director. For the relatively shallow groove and the relatively thick cell gap, the director is only dependent on the coordinate z. For the relatively deep groove and the relatively thin cell gap, the director must be dependent on the two coordinates x and z because of the increased elastic strain energy induced by the grating surface. (condensed matter: structural, mechanical, and thermal properties)

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

Directory of Open Access Journals (Sweden)

Francesco Todescato

2016-08-01

Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

Surface relief and refractive index gratings patterned in chalcogenide glasses and studied by off-axis digital holography.

Science.gov (United States)

Cazac, V; Meshalkin, A; Achimova, E; Abashkin, V; Katkovnik, V; Shevkunov, I; Claus, D; Pedrini, G

2018-01-20

Surface relief gratings and refractive index gratings are formed by direct holographic recording in amorphous chalcogenide nanomultilayer structures As 2 S 3 -Se and thin films As 2 S 3 . The evolution of the grating parameters, such as the modulation of refractive index and relief depth in dependence of the holographic exposure, is investigated. Off-axis digital holographic microscopy is applied for the measurement of the photoinduced phase gratings. For the high-accuracy reconstruction of the wavefront (amplitude and phase) transmitted by the fabricated gratings, we used a computational technique based on the sparse modeling of phase and amplitude. Both topography and refractive index maps of recorded gratings are revealed. Their separated contribution in diffraction efficiency is estimated.

Grating-assisted surface acoustic wave directional couplers

Science.gov (United States)

Golan, G.; Griffel, G.; Seidman, A.; Croitoru, N.

1991-07-01

Physical properties of novel grating-assisted Y directional couplers are examined using the coupled-mode theory. A general formalism for the analysis of the lateral perturbed directional coupler properties is presented. Explicit expressions for waveguide key parameters such as coupling length, grating period, and other structural characterizations, are obtained. The influence of other physical properties such as time and frequency response or cutoff conditions are also analyzed. A plane grating-assisted directional coupler is presented and examined as a basic component in the integrated acoustic technology.

Distributed Bragg grating frequency control in metallic nano lasers

NARCIS (Netherlands)

Marell, M.J.H.; Hill, M.T.

2010-01-01

We show that Bragg gratings can be readily incorporated into metallic nano-lasers which exploit waveguides with semiconductor cores, via modulation of the waveguide width. This provides a simple way to implement laser wavelength control.

Tunneling spectroscopy on semiconductors with a low surface state density

OpenAIRE

Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

1997-01-01

A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

Hard synchrotron radiation scattering from a nonideal surface grating from multilayer X-ray mirrors

International Nuclear Information System (INIS)

Punegov, V.I.; Nesterets, Ya.I.; Mytnichenko, S.V.; Kovalenko, N.V.; Chernov, V.A.

2003-01-01

The hard synchrotron radiation scattering from a multilayer surface grating is theoretically and experimentally investigated. The numerical calculations of angular distribution of scattering intensity from X-ray mirror Ni/C are executed with use of recurrence formulae and statistical dynamical theory of diffraction. It is shown, that the essential role in formation of a diffraction pattern plays a diffuse scattering caused by structure imperfection of a multilayer grating [ru

A surface refractive index scanning system and method

DEFF Research Database (Denmark)

2015-01-01

The invention relates to a surface refractive index scanning system for characterization of a sample. The system comprises a grating device for holding or receiving the sample, the device comprising at least a first grating region having a first grating width along a transverse direction, and a s......The invention relates to a surface refractive index scanning system for characterization of a sample. The system comprises a grating device for holding or receiving the sample, the device comprising at least a first grating region having a first grating width along a transverse direction...... a grating period Λ2 in the longitudinal direction, where the longitudinal direction is orthogonal to the transverse direction. A grating period spacing ΔΛ = Λ1 - Λ2 is finite. Further, the first and second grating periods are chosen to provide optical resonances for light respectively in a first...... wavelength band and a second wavelength band, light is being emitted, transmitted, or reflected in an out-of-plane direction, wherein the first wavelength band and the second wavelength band are at least partially non-overlapping in wavelength. The system further comprises a light source for illuminating...

Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

2010-01-01

A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

Transmission comb of a distributed Bragg reflector with two surface dielectric gratings

KAUST Repository

Zhao, Xiaobo; Zhang, Yongyou; Zhang, Qingyun; Zou, Bingsuo; Schwingenschlö gl, Udo

2016-01-01

The transmission behaviour of a distributed Bragg reector (DBR) with surface dielectric gratings on top and bottom is studied. The transmission shows a comb-like spectrum in the DBR band gap, which is explained in the Fano picture. The number

Adaptable Diffraction Gratings With Wavefront Transformation

Science.gov (United States)

Iazikov, Dmitri; Mossberg, Thomas W.; Greiner, Christoph M.

2010-01-01

Diffraction gratings are optical components with regular patterns of grooves, which angularly disperse incoming light by wavelength. Traditional diffraction gratings have static planar, concave, or convex surfaces. However, if they could be made so that they can change the surface curvature at will, then they would be able to focus on particular segments, self-calibrate, or perform fine adjustments. This innovation creates a diffraction grating on a deformable surface. This surface could be bent at will, resulting in a dynamic wavefront transformation. This allows for self-calibration, compensation for aberrations, enhancing image resolution in a particular area, or performing multiple scans using different wavelengths. A dynamic grating gives scientists a new ability to explore wavefronts from a variety of viewpoints.

Low-frequency active surface plasmon optics on semiconductors

NARCIS (Netherlands)

Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

2006-01-01

A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Nanogap embedded silver gratings for surface plasmon enhanced fluorescence

Science.gov (United States)

Bhatnagar, Kunal

Plasmonic nanostructures have been extensively used in the past few decades for applications in sub-wavelength optics, data storage, optoelectronic circuits, microscopy and bio-photonics. The enhanced electromagnetic field produced at the metal and dielectric interface by the excitation of surface plasmons via incident radiation can be used for signal enhancement in fluorescence and surface enhanced Raman scattering studies. Novel plasmonic structures have shown to provide very efficient and extreme light concentration at the nano-scale in recent years. The enhanced electric field produced within a few hundred nanometers of these surfaces can be used to excite fluorophores in the surrounding environment. Fluorescence based bio-detection and bio-imaging are two of the most important tools in the life sciences and improving the qualities and capabilities of fluorescence based detectors and imaging equipment remains a big challenge for industry manufacturers. We report a novel fabrication technique for producing nano-gap embedded periodic grating substrates on the nanoscale using a store bought HD-DVD and conventional soft lithography procedures. Polymethylsilsesquioxane (PMSSQ) polymer is used as the ink for the micro-contact printing process with PDMS stamps obtained from the inexpensive HD-DVDs as master molds. Fluorescence enhancement factors of up to 118 times were observed with these silver nanostructures in conjugation with Rhodamine-590 fluorescent dye. These substrates are ideal candidates for a robust and inexpensive optical system with applications such as low-level fluorescence based analyte detection, single molecule imaging, and surface enhanced Raman studies. Preliminary results in single molecule experiments have also been obtained by imaging individual 3 nm and 20 nm dye-doped nanoparticles attached to the silver plasmonic gratings using epi-fluorescence microscopy.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

Science.gov (United States)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Theory of quasiparticle surface states in semiconductor surfaces

International Nuclear Information System (INIS)

Hybertsen, M.S.; Louie, S.G.

1988-01-01

A first-principles theory of the quasiparticle surface-state energies on semiconductor surfaces is developed. The surface properties are calculated using a repeated-slab geometry. Many-body effects due to the electron-electron interaction are represented by the electron self-energy operator including the full surface Green's function and local fields and dynamical screening effects in the Coulomb interaction. Calculated surface-state energies for the prototypical Si(111):As and Ge(111):As surfaces are presented. The calculated energies and dispersions for the occupied surface states (resonances) are in excellent agreement with recent angle-resolved photoemission data. Predictions are made for the position of empty surface states on both surfaces which may be experimentally accessible. The resulting surface state gap at Gamma-bar for Si(111):As agrees with recent scanning-tunneling-spectroscopy measurements. Comparison of the present results to eigenvalues from the local-density-functional calculation reveals substantial corrections for the gaps between empty and occupied surface states. This correction is found to depend on the character of the surface states involved

Electroless silver plating of the surface of organic semiconductors.

Science.gov (United States)

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Relative humidity sensor based on surface plasmon resonance of D-shaped fiber with polyvinyl alcohol embedding Au grating

Science.gov (United States)

Yan, Haitao; Han, Daofu; Li, Ming; Lin, Bo

2017-01-01

This paper presents the design, fabrication, and characterization of a D-shaped fiber coated with polyvinyl alcohol (PVA) embedding an Au grating-based relative humidity (RH) sensor. The Au grating is fabricated on a D-shaped fiber to match the wave-vector and excite the surface plasmon, and the PVA is embedded in the Au grating as a sensitive cladding film. The refractive index of PVA changes with the ambient humidity. Measurements in a controlled environment show that the RH sensor can achieve a sensitivity of 5.4 nm per relative humidity unit in the RH range from 0% to 70% RH. Moreover, the surface plasmon resonance can be realized and used for RH sensing at the C band of optical fiber communication instead of the visible light band due to the metallic grating microstructure on the D-shaped fiber.

Nanostructure Diffraction Gratings for Integrated Spectroscopy and Sensing

Science.gov (United States)

Guo, Junpeng (Inventor)

2016-01-01

The present disclosure pertains to metal or dielectric nanostructures of the subwavelength scale within the grating lines of optical diffraction gratings. The nanostructures have surface plasmon resonances or non-plasmon optical resonances. A linear photodetector array is used to capture the resonance spectra from one of the diffraction orders. The combined nanostructure super-grating and photodetector array eliminates the use of external optical spectrometers for measuring surface plasmon or optical resonance frequency shift caused by the presence of chemical and biological agents. The nanostructure super-gratings can be used for building integrated surface enhanced Raman scattering (SERS) spectrometers. The nanostructures within the diffraction grating lines enhance Raman scattering signal light while the diffraction grating pattern of the nanostructures diffracts Raman scattering light to different directions of propagation according to their wavelengths. Therefore, the nanostructure super-gratings allows for the use of a photodetector array to capture the surface enhanced Raman scattering spectra.

Binary Pseudo-Random Gratings and Arrays for Calibration of Modulation Transfer Functions of Surface Profilometers

Energy Technology Data Exchange (ETDEWEB)

Barber, Samuel K.; Anderson, Erik D.; Cambie, Rossana; McKinney, Wayne R.; Takacs, Peter Z.; Stover, John C.; Voronov, Dmitriy L.; Yashchuk, Valeriy V.

2009-09-11

A technique for precise measurement of the modulation transfer function (MTF), suitable for characterization of a broad class of surface profilometers, is investigated in detail. The technique suggested in [Proc. SPIE 7077-7, (2007), Opt. Eng. 47(7), 073602-1-5 (2008)]is based on use of binary pseudo-random (BPR) gratings and arrays as standard MTF test surfaces. Unlike most conventional test surfaces, BPR gratings and arrays possess white-noise-like inherent power spectral densities (PSD), allowing the direct determination of the one- and two-dimensional MTF, respectively, with a sensitivity uniform over the entire spatial frequency range of a profiler. In the cited work, a one dimensional realization of the suggested method based on use of BPR gratings has been demonstrated. Here, a high-confidence of the MTF calibration technique is demonstrated via cross comparison measurements of a number of two dimensional BPR arrays using two different interferometric microscopes and a scatterometer. We also present the results of application of the experimentally determined MTF correction to the measurement taken with the MicromapTM-570 interferometric microscope of the surface roughness of a super-polished test mirror. In this particular case, without accounting for the instrumental MTF, the surface rms roughness over half of the instrumental spatial frequency bandwidth would be underestimated by a factor of approximately 1.4.

Topology optimization of grating couplers for the efficient excitation of surface plasmons

DEFF Research Database (Denmark)

Andkjær, Jacob Anders; Sigmund, Ole; Nishiwaki, Shinji

2010-01-01

We propose a methodology for a systematic design of grating couplers for efficient excitation of surface plasmons at metal-dielectric interfaces. The methodology is based on a two-dimensional topology optimization formulation based on the H-polarized scalar Helmholtz equation and finite-element m...

Cylinder and metal grating polarization beam splitter

Science.gov (United States)

Yang, Junbo; Xu, Suzhi

2017-08-01

We propose a novel and compact metal grating polarization beam splitter (PBS) based on its different reflected and transmitted orders. The metal grating exhibits a broadband high reflectivity and polarization dependence. The rigorous coupled wave analysis is used to calculate the reflectivity and the transmitting spectra and optimize the structure parameters to realize the broadband PBS. The finite-element method is used to calculate the field distribution. The characteristics of the broadband high reflectivity, transmitting and the polarization dependence are investigated including wavelength, period, refractive index and the radius of circle grating. When grating period d = 400 nm, incident wavelength λ = 441 nm, incident angle θ = 60° and radius of circle d/5, then the zeroth reflection order R0 = 0.35 and the transmission zeroth order T0 = 0.08 for TE polarization, however, T0 = 0.34 and R0 = 0.01 for TM mode. The simple fabrication method involves only single etch step and good compatibility with complementary metal oxide semiconductor technology. PBS designed here is particularly suited for optical communication and optical information processing.

Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

Science.gov (United States)

Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

2016-10-14

Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

Additional compound semiconductor nanowires for photonics

Science.gov (United States)

Ishikawa, F.

2016-02-01

GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

Sub-wavelength surface gratings for light redirection in transparent substrates

DEFF Research Database (Denmark)

Buss, Thomas; Smith, Cameron; Christiansen, Mads Brøkner

2012-01-01

We demonstrate sub-wavelength grating couplers patterned on glass surfaces which are designed to convert incident free-space radiation into guided modes along the glass material. The devices are fabricated by nanoimprint lithography and the measured optical performance is compared to a simple mod...... panes and display applications with minimal influence on vision quality. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738777]...

Surface emitting ring quantum cascade lasers for chemical sensing

Science.gov (United States)

Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

2018-01-01

We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

Structure of metal-rich (001) surfaces of III-V compound semiconductors

DEFF Research Database (Denmark)

Kumpf, C.; Smilgies, D.; Landemark, E.

2001-01-01

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

Growth of crystalline semiconductor materials on crystal surfaces

CERN Document Server

Aleksandrov, L

2013-01-01

Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

An elastomeric grating coupler

NARCIS (Netherlands)

Kocabas, A.; Ay, F.; Dana, A.; Aydinli, A.

We report on a novel nondestructive and reversible method for coupling free space light to planar optical waveguides. In this method, an elastomeric grating is used to produce an effective refractive index modulation on the surface of the optical waveguide. The external elastomeric grating binds to

Theoretical modeling and design of photonic structures in zeolite nanocomposites for gas sensing. Part I: surface relief gratings.

Science.gov (United States)

Cody, D; Naydenova, I

2017-12-01

The suitability of holographic structures fabricated in zeolite nanoparticle-polymer composite materials for gas sensing applications has been investigated. Theoretical modeling of the sensor response (i.e., change in hologram readout due to a change in refractive index modulation or thickness as a result of gas adsorption) of different sensor designs was carried out using Raman-Nath theory and Kogelnik's coupled wave theory. The influence of a range of parameters on the sensor response of holographically recorded surface and volume photonic grating structures has been studied, namely the phase difference between the diffracted and probe beam introduced by the grating, grating geometry, thickness, spatial frequency, reconstruction wavelength, and zeolite nanoparticle refractive index. From this, the optimum fabrication conditions for both surface and volume holographic gas sensor designs have been identified. Here, in part I, results from theoretical modeling of the influence of design on the sensor response of holographically inscribed surface relief structures for gas sensing applications is reported.

Electronic collective modes and instabilities on semiconductor surfaces. I

International Nuclear Information System (INIS)

Muramatsu, A.; Hanke, W.

1984-01-01

A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

Science.gov (United States)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

Science.gov (United States)

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Bragg gratings inscription at 1550 nm in photosensitive step-index polymer optical fiber

Science.gov (United States)

Hu, X.; Kinet, D.; Chah, K.; Mégret, Patrice; Caucheteur, C.

2013-05-01

In this paper, we report photo-inscription of uniform Bragg gratings in Trans-4-stilbenemethanol-doped photosensitive step-index polymer optical fiber characterized by a core diameter of 8.2 μm. Single-mode gratings were produced at ~1550 nm by the phase mask technique with a Helium-Cadmium emitting at 325 nm with an average power of 30 mW. The grating growth was monitored during the manufacturing process, showing that the reflected band is blue shifted by a few hundreds of picometers. Finally, the gratings were characterized in temperature in the range 25 - 50 °C. Their sensitivity has been computed equal to - 47 pm/°C.

Photon extraction from nitride ultraviolet light-emitting devices

Science.gov (United States)

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

2015-02-24

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Subsurface dimerization in III-V semiconductor (001) surfaces

DEFF Research Database (Denmark)

Kumpf, C.; Marks, L.D.; Ellis, D.

2001-01-01

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

Science.gov (United States)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

Energy Technology Data Exchange (ETDEWEB)

Reinke, Nils [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)]. E-mail: nils.reinke@physik.uni-augsburg.de; Fuhrmann, Thomas [Macromolecular Chemistry and Molecular Materials, University of Kassel (Germany); Perschke, Alexandra [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany); Franke, Hilmar [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)

2004-12-10

In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N'-bis (4-phenyl)-N, N'-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq{sub 3}:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.

Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

Science.gov (United States)

Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

2009-12-09

We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

The grating as an accelerating structure

International Nuclear Information System (INIS)

Fernow, R.C.

1991-02-01

This report considers the use of a diffraction grating as an accelerating structure for charged particle beams. We examine the functional dependence of the electromagnetic fields above the surface of a grating. Calculations are made of the strength of the accelerating modes for structures with π and 2π phase advance per period and for incident waves polarized with either the E or H vector along the grooves of the grating. We consider examples of using gratings in a laser linac and in a grating lens. We also briefly examine previous results published about this subject. 36 refs

Spherical grating spectrometers

Science.gov (United States)

O'Donoghue, Darragh; Clemens, J. Christopher

2014-07-01

We describe designs for spectrometers employing convex dispersers. The Offner spectrometer was the first such instrument; it has almost exclusively been employed on satellite platforms, and has had little impact on ground-based instruments. We have learned how to fabricate curved Volume Phase Holographic (VPH) gratings and, in contrast to the planar gratings of traditional spectrometers, describe how such devices can be used in optical/infrared spectrometers designed specifically for curved diffraction gratings. Volume Phase Holographic gratings are highly efficient compared to conventional surface relief gratings; they have become the disperser of choice in optical / NIR spectrometers. The advantage of spectrometers with curved VPH dispersers is the very small number of optical elements used (the simplest comprising a grating and a spherical mirror), as well as illumination of mirrors off axis, resulting in greater efficiency and reduction in size. We describe a "Half Offner" spectrometer, an even simpler version of the Offner spectrometer. We present an entirely novel design, the Spherical Transmission Grating Spectrometer (STGS), and discuss exemplary applications, including a design for a double-beam spectrometer without any requirement for a dichroic. This paradigm change in spectrometer design offers an alternative to all-refractive astronomical spectrometer designs, using expensive, fragile lens elements fabricated from CaF2 or even more exotic materials. The unobscured mirror layout avoids a major drawback of the previous generation of catadioptric spectrometer designs. We describe laboratory measurements of the efficiency and image quality of a curved VPH grating in a STGS design, demonstrating, simultaneously, efficiency comparable to planar VPH gratings along with good image quality. The stage is now set for construction of a prototype instrument with impressive performance.

Study of surface modifications for improved selected metal (II-VI) semiconductor based devices

Science.gov (United States)

Blomfield, Christopher James

Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe.Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state.Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi

Elucidation and control of electronic properties related to organic semiconductors

International Nuclear Information System (INIS)

Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

2009-01-01

The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

Voltammetric determination of metal impurities on semiconductor surface

International Nuclear Information System (INIS)

Knyazeva, E.P.; Mokrousov, G.M.; Volkova, V.N.

1995-01-01

A modification of voltamperometric method used for analysis of semiconductor surfaces which make it possible to exclude a contact between surface and background solution. This technique is based on solubility of elemental metal forms in low melting electroconductor systems (e.g., in mercury. The voltampere characteristics of amalgams formed are then studied. The suggested method is simple, rapid, and makes it possible to perform a nondestructive qualitative analysis of the sample surface area measuring about 10 -3 cm -2 and more. 4 refs.; 2 figs

Theoretical analysis of a fiber optic surface plasmon resonance sensor utilizing a Bragg grating

Czech Academy of Sciences Publication Activity Database

Špačková, Barbora; Homola, Jiří

2009-01-01

Roč. 17, č. 25 (2009), s. 23254-23264 ISSN 1094-4087 Institutional research plan: CEZ:AV0Z20670512 Keywords : Surface plasmon resonance * Fiber optic * Bragg grating * Biosensor * Coupled mode theory Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.278, year: 2009

On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

NARCIS (Netherlands)

Houtepen, Arjan J.; Hens, Zeger; Owen, Jonathan S.; Infante, Ivan

2017-01-01

One of the greatest challenges in the field of semiconductor nanomaterials is to make trap-free nanocrystalline structures to attain a remarkable improvement of their optoelectronic performances. In semiconductor nanomaterials, a very high number of atoms is located on the surface and these atoms

High performance Si immersion gratings patterned with electron beam lithography

Science.gov (United States)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

A Initio Theoretical Studies of Surfaces of Semiconductors

Science.gov (United States)

Wang, Jing

1993-01-01

The first semiconductor which we study with these techniques is the archetypal elemental semiconductor, silicon. We present the first extensive study of point defects on Si(100). We identify the principal defects and two primary mechanisms responsible for their dominance: the need to eliminate dangling bonds on the surface and the need to compensate the strain induced by topological effects. Furthermore, we present evidence that the presence of point defects on the Si(100) surface is not intrinsic to the ground state of the surface as a stress relieving mechanism but rather is due merely to thermal fluctuations. We address materials issues associated with the identification of the lowest energy surfaces of GaAs and the determination of the geometric structure of a GaAs crystallite growing freely in three dimensions. The fracture energies associated with (110), (100) and (111) interface planes are calculated and a Wulff construction indicates that an ideal stoichiometric GaAs crystal should be terminated with (110) surfaces. We investigate the more complex issues that arise on surfaces when aspects of these two semiconductors are mixed. We investigate the problem of growing GaAs on the Si(100) surface and demonstrate how and why the most fundamental properties of the resulting bulk GaAs material, such as its crystalline orientation, may depend sensitively on the interplay between growth conditions such as temperature and the properties of the Si surface. For stepped Si(100) -As, we show that the growth of As directly on top of the Si surface produces a metastable state, while the replacement of the original top Si layer leads to a lower energy configuration, with the rearrangement of the surface driven by the relaxation of stress by surface steps. Finally, we study delta -doping, where one attempts to grow a single layer of Si on a GaAs surface before continuing with the growth of bulk GaAs. We shall employ a slightly different modality of the ab initio approach. We

Time-domain Brillouin scattering assisted by diffraction gratings

Science.gov (United States)

Matsuda, Osamu; Pezeril, Thomas; Chaban, Ievgeniia; Fujita, Kentaro; Gusev, Vitalyi

2018-02-01

Absorption of ultrashort laser pulses in a metallic grating deposited on a transparent sample launches coherent compression/dilatation acoustic pulses in directions of different orders of acoustic diffraction. Their propagation is detected by delayed laser pulses, which are also diffracted by the metallic grating, through the measurement of the transient intensity change of the first-order diffracted light. The obtained data contain multiple frequency components, which are interpreted by considering all possible angles for the Brillouin scattering of light achieved through multiplexing of the propagation directions of light and coherent sound by the metallic grating. The emitted acoustic field can be equivalently presented as a superposition of plane inhomogeneous acoustic waves, which constitute an acoustic diffraction grating for the probe light. Thus the obtained results can also be interpreted as a consequence of probe light diffraction by both metallic and acoustic gratings. The realized scheme of time-domain Brillouin scattering with metallic gratings operating in reflection mode provides access to wide range of acoustic frequencies from minimal to maximal possible values in a single experimental optical configuration for the directions of probe light incidence and scattered light detection. This is achieved by monitoring the backward and forward Brillouin scattering processes in parallel. Potential applications include measurements of the acoustic dispersion, simultaneous determination of sound velocity and optical refractive index, and evaluation of samples with a single direction of possible optical access.

Vertical-cavity surface-emitting lasers for medical diagnosis

DEFF Research Database (Denmark)

Ansbæk, Thor

This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

Development of a segmented grating mount system for FIREX-1

International Nuclear Information System (INIS)

Ezaki, Y; Tabata, M; Kihara, M; Horiuchi, Y; Endo, M; Jitsuno, T

2008-01-01

A mount system for segmented meter-sized gratings has been developed, which has a high precision grating support mechanism and drive mechanism to minimize both deformation of the optical surfaces and misalignments in setting a segmented grating for obtaining sufficient performance of the pulse compressor. From analytical calculations, deformation of the grating surface is less than 1/20 lambda RMS and the estimated drive resolution for piston and tilt drive of the segmented grating is 1/20 lambda, which are both compliant with the requirements for the rear-end subsystem of FIREX-1

Large-Area Binary Blazed Grating Coupler between Nanophotonic Waveguide and LED

Directory of Open Access Journals (Sweden)

Hongqiang Li

2014-01-01

Full Text Available A large-area binary blazed grating coupler for the arrayed waveguide grating (AWG demodulation integrated microsystem on silicon-on-insulator (SOI was designed for the first time. Through the coupler, light can be coupled into the SOI waveguide from the InP-based C-band LED for the AWG demodulation integrated microsystem to function. Both the length and width of the grating coupler are 360 μm, as large as the InP-based C-band LED light emitting area in the system. The coupler was designed and optimized based on the finite difference time domain method. When the incident angle of the light source is 0°, the coupling efficiency of the binary blazed grating is 40.92%, and the 3 dB bandwidth is 72 nm at a wavelength of 1550 nm.

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

Science.gov (United States)

Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

2011-01-31

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

Off-plane x-ray reflection grating fabrication

Science.gov (United States)

Peterson, Thomas J.; DeRoo, Casey T.; Marlowe, Hannah; McEntaffer, Randall L.; Miles, Drew M.; Tutt, James H.; Schultz, Ted B.

2015-09-01

Off-plane X-ray diffraction gratings with precision groove profiles at the submicron scale will be used in next generation X-ray spectrometers. Such gratings will be used on a current NASA suborbital rocket mission, the Off-plane Grating Rocket Experiment (OGRE), and have application for future grating missions. The fabrication of these gratings does not come without challenges. High performance off-plane gratings must be fabricated with precise radial grating patterns, optically at surfaces, and specific facet angles. Such gratings can be made using a series of common micro-fabrication techniques. The resulting process is highly customizable, making it useful for a variety of different mission architectures. In this paper, we detail the fabrication method used to produce high performance off-plane gratings and report the results of a preliminary qualification test of a grating fabricated in this manner. The grating was tested in the off-plane `Littrow' configuration, for which the grating is most efficient for a given diffraction order, and found to achieve 42% relative efficiency in the blaze order with respect to all diffracted light.

Photo-induced refractive index and topographical surface gratings in functionalized nanocarbon solid film

Energy Technology Data Exchange (ETDEWEB)

McGee, David J.; Ferrie, John; Plachy, Aljoscha [Department of Physics, The College of New Jersey, Ewing, New Jersey 08628 (United States); Joo, Yongho; Choi, Jonathan; Kanimozhi, Catherine; Gopalan, Padma, E-mail: pgopalan@cae.wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2015-11-02

We demonstrate that a single-walled carbon nanotube network noncovalently coupled with a pyrene-modified azo-benzene chromophore functions as a host matrix for a broad range of photo-orientation and photomechanical effects. The chromophore could be efficiently reoriented through repeated trans-cis-trans isomerization under linearly polarized 480 nm light, with Δn of 0.012 at 650 nm and fast characteristic rise-times of 0.12 s. Erasable phase diffraction gratings could also be written, with permanent surface relief gratings forming at sufficiently long irradiation times. In addition to demonstrating a mechanism for photo-manipulation of single-walled carbon nanotubes, these results show photo-orientation of chromophores in azo-functionalized single-walled carbon nanotube networks as a path towards the photosensitive tuning of the electrostatic environment of the nanotube.

Photo-induced refractive index and topographical surface gratings in functionalized nanocarbon solid film

International Nuclear Information System (INIS)

McGee, David J.; Ferrie, John; Plachy, Aljoscha; Joo, Yongho; Choi, Jonathan; Kanimozhi, Catherine; Gopalan, Padma

2015-01-01

We demonstrate that a single-walled carbon nanotube network noncovalently coupled with a pyrene-modified azo-benzene chromophore functions as a host matrix for a broad range of photo-orientation and photomechanical effects. The chromophore could be efficiently reoriented through repeated trans-cis-trans isomerization under linearly polarized 480 nm light, with Δn of 0.012 at 650 nm and fast characteristic rise-times of 0.12 s. Erasable phase diffraction gratings could also be written, with permanent surface relief gratings forming at sufficiently long irradiation times. In addition to demonstrating a mechanism for photo-manipulation of single-walled carbon nanotubes, these results show photo-orientation of chromophores in azo-functionalized single-walled carbon nanotube networks as a path towards the photosensitive tuning of the electrostatic environment of the nanotube

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

The potential of diffraction grating for spatial applications

Science.gov (United States)

Jourlin, Y.; Parriaux, O.; Pigeon, F.; Tischenko, A. V.

2017-11-01

Diffraction gratings are know, and have been fabricated for more than one century. They are now making a come back for two reasons: first, because they are now better understood which leads to the efficient exploitation of what was then called their "anomalies"; secondly, because they are now fabricable by means of the modern manufacturing potential of planar technologies. Novel grating can now perform better than conventional gratings, and address new application fields which were not expected to be theirs. This is the case of spatial applications where they can offer multiple optical functions, low size, low weight and mechanical robustness. The proposed contribution will briefly discuss the use of gratings for spatial applications. One of the most important applications is in the measurement of displacement. Usual translation and rotation sensors are bulky devices, which impose a system breakdown leading to cumbersome and heavy assemblies. We are proposing a miniaturized version of the traditional moving grating technique using submicron gratings and a specific OptoASIC which enables the measurement function to be non-obtrusively inserted into light and compact electro-mechanical systems. Nanometer resolution is possible with no compromise on the length of the measurement range. Another family of spatial application is in the field of spectrometers where new grating types allow a more flexible processing of the optical spectrum. Another family of applications addresses the question of inter-satellite communications: the introduction of gratings in laser cavities or in the laser mirrors enables the stabilization of the emitted polarization, the stabilization of the frequency as well as wide range frequency sweeping without mobile parts.

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

Encapsulation process for diffraction gratings.

Science.gov (United States)

Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

2015-07-13

Encapsulation of grating structures facilitates an improvement of the optical functionality and/or adds mechanical stability to the fragile structure. Here, we introduce novel encapsulation process of nanoscale patterns based on atomic layer deposition and micro structuring. The overall size of the encapsulated structured surface area is only restricted by the size of the available microstructuring and coating devices; thus, overcoming inherent limitations of existing bonding processes concerning cleanliness, roughness, and curvature of the components. Finally, the process is demonstrated for a transmission grating. The encapsulated grating has 97.5% transmission efficiency in the -1st diffraction order for TM-polarized light, and is being limited by the experimental grating parameters as confirmed by rigorous coupled wave analysis.

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Reactivity of group IV (100) semiconductor surfaces towards organic compounds

Science.gov (United States)

Wang, George T.

The reactions of simple and multifunctional organic compounds with the clean silicon, germanium, and diamond (100)-2 x 1 semiconductor surfaces have been investigated using a combination of multiple internal reflection infrared spectroscopy and quantum chemistry density functional theory calculations. From these studies, an improved understanding of the atomic level reactivity of these semiconductor surfaces has been obtained, along with insights into how to achieve their selective coupling with organics of desired and varied functionality. In addition to the Si(100) and Ge(100) surfaces, our results show that cycloaddition chemistry can also be extended to the diamond (100) surface. At room temperature, 1,3-butadiene was found to form a Diels-Alder product with the diamond (100) surface, as evidenced by isotopic substitution experiments and comparison of the surface adduct with its direct molecular analogue, cyclohexene. The reactions of other classes of molecules in addition to alkenes on the Si(100) and Ge(100) surfaces, including a series of five-membered cyclic amines, were also examined. For tertiary aliphatic amines on Si(100) and both secondary and tertiary aliphatic amines on Ge(100), a majority of the molecules were observed to become stably trapped in dative-bonded precursor states rather than form energetically favorable dissociation products. For pyrrole, aromaticity was found to play a defining role in its reactivity, and a comparison of its molecular and surface reactivity reveals interesting similarities. To probe the factors controlling the selectivity of organic reactions on clean semiconductor surfaces, the adsorption of acetone and a series of unsaturated ketones was also investigated. The reaction of acetone on Ge(100) was found to be under thermodynamic control at room temperature, resulting in the formation of an "ene" product rather than the kinetically favored [2+2] C=O cycloaddition product previously observed on the Si(100) surface. In

Fiber Bragg grating assisted surface plasmon resonance sensor with graphene oxide sensing layer

Science.gov (United States)

Arasu, P. T.; Noor, A. S. M.; Shabaneh, A. A.; Yaacob, M. H.; Lim, H. N.; Mahdi, M. A.

2016-12-01

A single mode fiber Bragg grating (FBG) is used to generate Surface Plasmon Resonance (SPR). The uniform gratings of the FBG are used to scatter light from the fiber optic core into the cladding thus enabling the interaction between the light and a thin gold film in order to generate SPR. Applying this technique, the cladding around the FBG is left intact, making this sensor very robust and easy to handle. A thin film of graphene oxide (GO) is deposited over a 45 nm gold film to enhance the sensitivity of the SPR sensor. The gold coated sensor demonstrated high sensitivity of approximately 200 nm/RIU when tested with different concentrations of ethanol in an aqueous medium. A 2.5 times improvement in sensitivity is observed with the GO enhancement compared to the gold coated sensor.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

Energy Technology Data Exchange (ETDEWEB)

Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

2011-07-01

III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

Surface phonon polaritons in semi-infinite semiconductor superlattices

International Nuclear Information System (INIS)

Nkoma, J.S.

1986-07-01

Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

Bragg gratings inscription in step-index PMMA optical fiber by femtosecond laser pulses at 400 nm

Science.gov (United States)

Hu, X.; Kinet, D.; Chah, K.; Mégret, P.; Caucheteur, C.

2016-05-01

In this paper, we report photo-inscription of uniform Bragg gratings in trans-4-stilbenemethanol-doped photosensitive step-index polymer optical fiber. Gratings were produced at ~1575 nm by the phase mask technique with a femtosecond laser emitting at 400 nm with different average optical powers (8 mW, 13 mW and 20 mW). The grating growth dynamics in transmission were monitored during the manufacturing process, showing that the grating grows faster with higher power. Using 20 mW laser beam power, the reflectivity reaches 94 % (8 dB transmission loss) in 70 seconds. Finally, the gratings were characterized in temperature in the range 20 - 45 °C. The thermal sensitivity has been computed equal to - 86.6 pm/°C.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

Science.gov (United States)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

Immersion Gratings for Infrared High-resolution Spectroscopy

Science.gov (United States)

Sarugaku, Yuki; Ikeda, Yuji; Kobayashi, Naoto; Kaji, Sayumi; Sukegawa, Takashi; Sugiyama, Shigeru; Nakagawa, Takao; Arasaki, Takayuki; Kondo, Sohei; Nakanishi, Kenshi; Yasui, Chikako; Kawakita, Hideyo

2016-10-01

High-resolution spectroscopy in the infrared wavelength range is essential for observations of minor isotopologues, such as HDO for water, and prebiotic organic molecules like hydrocarbons/P-bearing molecules because numerous vibrational molecular bands (including non-polar molecules) are located in this wavelength range. High spectral resolution enables us to detect weak lines without spectral line confusion. This technique has been widely used in planetary sciences, e.g., cometary coma (H2O, CO, and organic molecules), the martian atmosphere (CH4, CO2, H2O and HDO), and the upper atmosphere of gas giants (H3+ and organic molecules such as C2H6). Spectrographs with higher resolution (and higher sensitivity) still have a potential to provide a plenty of findings. However, because the size of spectrographs scales with the spectral resolution, it is difficult to realize it.Immersion grating (IG), which is a diffraction grating wherein the diffraction surface is immersed in a material with a high refractive index (n > 2), provides n times higher spectral resolution compared to a reflective grating of the same size. Because IG reduces the size of spectrograph to 1/n compared to the spectrograph with the same spectral resolution using a conventional reflective grating, it is widely acknowledged as a key optical device to realize compact spectrographs with high spectral resolution.Recently, we succeeded in fabricating a CdZnTe immersion grating with the theoretically predicted diffraction efficiency by machining process using an ultrahigh-precision five-axis processing machine developed by Canon Inc. Using the same technique, we completed a practical germanium (Ge) immersion grating with both a reflection coating on the grating surface and the an AR coating on the entrance surface. It is noteworthy that the wide wavelength range from 2 to 20 um can be covered by the two immersion gratings.In this paper, we present the performances and the applications of the immersion

AC low-pressure plasmas generated by using annular-shaped electrodes for abatement of pollutants emitted during semiconductor manufacturing processes

International Nuclear Information System (INIS)

Hur, Min; Lee, Jae Ok; Song, Young Hoon

2011-01-01

A plasma abatement system operating at low pressures is set up with the aim of treating pollutants emitted by the semiconductor industry. The abatement device is characterized by using a tube-shaped reactor design and a bipolar alternating current, which allows an easy connection to pre-existing pipelines in the semiconductor industry and low installation cost, respectively. By using optical emission spectroscopy (OES) and Fourier transform infrared spectroscopy (FTIR), we analyzed the discharge characteristics and abatement efficiency with emphasis on the working pressure effect. In the case of CF 4 , the destruction and removal efficiency (DRE) is greatly reduced with increasing pressure. However, the pressure has a relatively small influence on the DRE for tetrakis(ethylmethylamino)zirconium (TEMAZ), which is significantly destroyed only with several hundred watts and without any liquefied byproducts. This difference is closely related to the spatial distribution of reactive species and to the chemical bond strengths of the pollutant's components. Finally, the applicability of the abatement device is discussed based on the experimental results.

Filamentation of a surface plasma wave over a semiconductor-free space interface

Science.gov (United States)

Kumar, Gagan; Tripathi, V. K.

2007-12-01

A large amplitude surface plasma wave (SPW), propagating over a semiconductor-free space interface, is susceptible to filamentation instability. A small perturbation in the amplitude of the SPW across the direction of propagation exerts a ponderomotive force on free electrons and holes, causing spatial modulation in free carrier density and hence the effective permittivity ɛeff of the semiconductor. The regions with higher ɛeff attract more power from the nieghborhood, leading to the growth of the perturbation. The growth rate increases with the intensity of the surface wave. It decreases with the frequency of the SPW.

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Fiber laser with combined feedback of core and cladding modes assisted by an intracavity long-period grating.

Science.gov (United States)

Sáez-Rodriguez, D; Cruz, J L; Díez, A; Andrés, M V

2011-05-15

We present a fiber laser made in a single piece of conventional doped-core fiber that operates by combined feedback of the fundamental core mode LP((0,1)) and the high-order cladding mode LP((0,10)). The laser is an all-fiber structure that uses two fiber Bragg gratings and a long-period grating to select the modes circulating in the cavity; the laser emits at the coupling wavelength between the core mode LP((0,1)) and the counterpropagating cladding mode LP((0,10)) in the Bragg gratings. This work demonstrates the feasibility of high-order mode fiber lasers assisted by long-period gratings. © 2011 Optical Society of America

Surface plasmon polariton amplification in semiconductor-graphene-dielectric structure

Energy Technology Data Exchange (ETDEWEB)

Dadoenkova, Yuliya S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Novgorod State University, Veliky Novgorod (Russian Federation); Donetsk Institute for Physics and Technology, Donetsk (Ukraine); Moiseev, Sergey G. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Ulyanovsk (Russian Federation); Abramov, Aleksei S. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Kadochkin, Aleksei S.; Zolotovskii, Igor O. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Institute of Nanotechnologies of Microelectronics of the Russian Academy of Sciences, 32A Leninskiy Prosp., 119991, Moscow (Russian Federation); Fotiadi, Andrei A. [Ulyanovsk State University, Ulyanovsk (Russian Federation); Universite de Mons (Belgium)

2017-05-15

A mechanism of amplification of surface plasmon polaritons due to the transfer of electromagnetic energy from a drift current wave into a far-infrared surface wave propagating along a semiconductor-dielectric boundary in waveguide geometry is proposed. A necessary condition of the interaction of these waves is phase matching condition, i. e., when the phase velocity of the surface wave approaches the drift velocity of charge carriers. It is shown that in the spectral region of the surface plasmon polariton slowing-down its amplification coefficient can reach values substantially exceeding the ohmic loss coefficient of the surface wave in the structure. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

Science.gov (United States)

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

International Nuclear Information System (INIS)

Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

2008-01-01

Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

Science.gov (United States)

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Amplification of surface acoustic waves by transverse electric current in piezoelectric semiconductors

DEFF Research Database (Denmark)

Gulyaev, Yuri V.

1974-01-01

acoustoelectric effect but also lead to amplification of surface acoustic waves by electron drift perpendicular to the surface. For Love waves in a piezoelectric semiconductor film on a highly conducting substrate, the amplification coefficient is found and the conditions necessary for amplification...

Fabrication of large area plasmonic nanoparticle grating structure on silver halide based transmission electron microscope film and its application as a surface enhanced Raman spectroscopy substrate

International Nuclear Information System (INIS)

Sudheer,; Tiwari, P.; Singh, M. N.; Sinha, A. K.; Rai, V. N.; Srivastava, A. K.; Bhartiya, S.; Mukherjee, C.

2015-01-01

The plasmonic responses of silver nanoparticle grating structures of different periods made on silver halide based electron microscope film are investigated. Raster scan of the conventional scanning electron microscope (SEM) is used to carry out electron beam lithography for fabricating the plasmonic nanoparticle grating (PNG) structures. Morphological characterization of the PNG structures, carried out by the SEM and the atomic force microscope, indicates that the depth of the groove decreases with a decrease in the grating period. Elemental characterization performed by the energy dispersive spectroscopy and the x-ray diffraction shows the presence of nanoparticles of silver in the PNG grating. The optical characterization of the gratings shows that the localized surface plasmon resonance peak shifts from 366 to 378 nm and broadens with a decrease in grating period from 10 to 2.5 μm. The surface enhanced Raman spectroscopy of the Rhodamine-6G dye coated PNG structure shows the maximum enhancement by two orders of magnitude in comparison to the randomly distributed silver nanoparticles having similar size and shape as the PNG structure

Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

Science.gov (United States)

Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

2015-12-09

We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

Science.gov (United States)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Towards freeform curved blazed gratings using diamond machining

Science.gov (United States)

Bourgenot, C.; Robertson, D. J.; Stelter, D.; Eikenberry, S.

2016-07-01

Concave blazed gratings greatly simplify the architecture of spectrographs by reducing the number of optical components. The production of these gratings using diamond-machining offers practically no limits in the design of the grating substrate shape, with the possibility of making large sag freeform surfaces unlike the alternative and traditional method of holography and ion etching. In this paper, we report on the technological challenges and progress in the making of these curved blazed gratings using an ultra-high precision 5 axes Moore-Nanotech machine. We describe their implementation in an integral field unit prototype called IGIS (Integrated Grating Imaging Spectrograph) where freeform curved gratings are used as pupil mirrors. The goal is to develop the technologies for the production of the next generation of low-cost, compact, high performance integral field unit spectrometers.

Scalable Inkjet-Based Structural Color Printing by Molding Transparent Gratings on Multilayer Nanostructured Surfaces.

Science.gov (United States)

Jiang, Hao; Kaminska, Bozena

2018-04-24

To enable customized manufacturing of structural colors for commercial applications, up-scalable, low-cost, rapid, and versatile printing techniques are highly demanded. In this paper, we introduce a viable strategy for scaling up production of custom-input images by patterning individual structural colors on separate layers, which are then vertically stacked and recombined into full-color images. By applying this strategy on molded-ink-on-nanostructured-surface printing, we present an industry-applicable inkjet structural color printing technique termed multilayer molded-ink-on-nanostructured-surface (M-MIONS) printing, in which structural color pixels are molded on multiple layers of nanostructured surfaces. Transparent colorless titanium dioxide nanoparticles were inkjet-printed onto three separate transparent polymer substrates, and each substrate surface has one specific subwavelength grating pattern for molding the deposited nanoparticles into structural color pixels of red, green, or blue primary color. After index-matching lamination, the three layers were vertically stacked and bonded to display a color image. Each primary color can be printed into a range of different shades controlled through a half-tone process, and full colors were achieved by mixing primary colors from three layers. In our experiments, an image size as big as 10 cm by 10 cm was effortlessly achieved, and even larger images can potentially be printed on recombined grating surfaces. In one application example, the M-MIONS technique was used for printing customizable transparent color optical variable devices for protecting personalized security documents. In another example, a transparent diffractive color image printed with the M-MIONS technique was pasted onto a transparent panel for overlaying colorful information onto one's view of reality.

Varied line-space gratings: past, present and future

International Nuclear Information System (INIS)

Hettrick, M.C.

1985-08-01

A classically ruled diffraction grating consists of grooves which are equidistant, straight and parallel. Conversely, the so-called ''holographic'' grating (formed by the interfering waves of coherent visible light), although severely constrained by the recording wavelength and recording geometry, has grooves which are typically neither equidistant, straight nor parallel. In contrast, a varied line-space (VLS) grating, in common nomenclature, is a design in which the groove positions are relatively unconstrained yet possess sufficient symmetry to permit mechanical ruling. Such seemingly exotic gratings are no longer only a theoretical curiosity, but have been ruled and used in a wide variety of applications. These include: (1) aberration-corrected normal incidence concave gratings for Seya-Namioka monochromators and optical de-multiplexers, (2) flat-field grazing incidence concave gratings for plasma diagnostics, (3) aberration-corrected grazing incidence plane gratings for space-borne spectrometers, (4) focusing grazing incidence plane grating for synchrotron radiation monochromators, and (5) wavefront generators for visible interferometry of optical surfaces (particularly aspheres). Future prospects of VLS gratings as dispersing elements, wavefront correctors and beamsplitters appear promising. The author discusses the history of VLS gratings, their present applications, and their potential in the future. 61 refs., 24 figs

Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

International Nuclear Information System (INIS)

Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

2000-01-01

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

Evaluation of inorganic and organic light-emitting diode displays for signage application

Science.gov (United States)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

Recording polarization gratings with a standing spiral wave

Science.gov (United States)

Vernon, Jonathan P.; Serak, Svetlana V.; Hakobyan, Rafik S.; Aleksanyan, Artur K.; Tondiglia, Vincent P.; White, Timothy J.; Bunning, Timothy J.; Tabiryan, Nelson V.

2013-11-01

A scalable and robust methodology for writing cycloidal modulation patterns of optical axis orientation in photosensitive surface alignment layers is demonstrated. Counterpropagating circularly polarized beams, generated by reflection of the input beam from a cholesteric liquid crystal, direct local surface orientation in a photosensitive surface. Purposely introducing a slight angle between the input beam and the photosensitive surface normal introduces a grating period/orientation that is readily controlled and templated. The resulting cycloidal diffractive waveplates offer utility in technologies requiring diffraction over a broad range of angles/wavelengths. This simple methodology of forming polarization gratings offers advantages over conventional fabrication techniques.

Recording polarization gratings with a standing spiral wave

Energy Technology Data Exchange (ETDEWEB)

Vernon, Jonathan P.; Tondiglia, Vincent P.; White, Timothy J.; Bunning, Timothy J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, 3005 Hobson Way, Suite 1, Wright-Patterson Air Force Base, Ohio 45433 (United States); Serak, Svetlana V.; Hakobyan, Rafik S.; Aleksanyan, Artur K.; Tabiryan, Nelson V., E-mail: nelson@beamco.com [BEAM Engineering for Advanced Measurements Company, 809 South Orlando Avenue, Suite I, Winter Park, Florida 32789 (United States)

2013-11-11

A scalable and robust methodology for writing cycloidal modulation patterns of optical axis orientation in photosensitive surface alignment layers is demonstrated. Counterpropagating circularly polarized beams, generated by reflection of the input beam from a cholesteric liquid crystal, direct local surface orientation in a photosensitive surface. Purposely introducing a slight angle between the input beam and the photosensitive surface normal introduces a grating period/orientation that is readily controlled and templated. The resulting cycloidal diffractive waveplates offer utility in technologies requiring diffraction over a broad range of angles/wavelengths. This simple methodology of forming polarization gratings offers advantages over conventional fabrication techniques.

Recording polarization gratings with a standing spiral wave

International Nuclear Information System (INIS)

Vernon, Jonathan P.; Tondiglia, Vincent P.; White, Timothy J.; Bunning, Timothy J.; Serak, Svetlana V.; Hakobyan, Rafik S.; Aleksanyan, Artur K.; Tabiryan, Nelson V.

2013-01-01

A scalable and robust methodology for writing cycloidal modulation patterns of optical axis orientation in photosensitive surface alignment layers is demonstrated. Counterpropagating circularly polarized beams, generated by reflection of the input beam from a cholesteric liquid crystal, direct local surface orientation in a photosensitive surface. Purposely introducing a slight angle between the input beam and the photosensitive surface normal introduces a grating period/orientation that is readily controlled and templated. The resulting cycloidal diffractive waveplates offer utility in technologies requiring diffraction over a broad range of angles/wavelengths. This simple methodology of forming polarization gratings offers advantages over conventional fabrication techniques

Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2010-01-01

We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

Theory and simulation of charge transport in disordered organic semiconductors

NARCIS (Netherlands)

Bobbert, P.A.; Kondov, I.; Sutman, G.

2013-01-01

Charge transport in polymeric or small-molecule organic semiconductors used in organic light-emitting diodes (OLEDs) occurs by hopping of charges between sites at which the charges are localized. The energetic disorder in these semiconductors has a profound influence on the charge transport: charges

Where science fiction meets reality? With oxide semiconductors.

Energy Technology Data Exchange (ETDEWEB)

Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2011-09-15

Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Self-organised wires and antiwires on semiconductor surfaces

International Nuclear Information System (INIS)

Srivastava, G.P.; Miwa, R.H.

2004-01-01

We present an overview of self-organised formation of lines of (semi)metal elements on semiconductor surfaces, together with an ab initio theoretical modelling of such quasi-one-dimensional systems. Results of calculations are presented for the atomic geometry, electronic states, and dispersion of the most tightly bound image state (IS) for a self-organised thin indium chain on the silicon surface forming the Si(1 1 1)-In(4 x 1) nanowire system. It is pointed out that strong anisotropic behaviour of the image state observed in inverse photoemission measurements originates from the anisotropy in the surface corrugation potential. Results are also presented for theoretically simulated STM images of self-organised Bi-lines on the Si(0 0 1) surface, which suggest a low density of states close to the valence band maximum localized on the Bi-lines, supporting a proposed model of a quantum antiwire system

Surface relief gratings: experiments, physical scenarios, and photoinduced (anomalous) dynamics of functionalized polymer chains

Science.gov (United States)

Mitus, A. C.; Radosz, W.; Wysoczanski, T.; Pawlik, G.

2017-10-01

Surface Relief Gratings (SRG) were demonstrated experimentally more than 20 years ago. Despite many years of research efforts the underlying physical mechanisms remain unclear. In this paper we present a short overview of the main concepts related to SRG - photofluidization and its counterpart, the orientational approach - based on a seminal paper by Saphiannikova et al. Next, we summarize the derivation of the cos2 θ potential, following the lines of recent paper of this group. Those results validate the generic Monte Carlo model for the photoinduced build-up of the density and SRG gratings in a model polymer matrix functionalized with azo-dyes, presented in another part of the paper. The characterization of the photoinduced motion of polymer chains, based on our recent paper, is briefly discussed in the last part of the paper. This discussion offers a sound insight into the mechanisms responsible for inscription of SRG as well as for single functionalized nanoparticle studies.

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

International Nuclear Information System (INIS)

Mekhtiyev, M.A.; Kalina, V.A.

1980-01-01

The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

Directory of Open Access Journals (Sweden)

Zakharov ND

2007-01-01

Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

Reconstruction of surface morphology from coherent scattering of white x-ray radiation

Energy Technology Data Exchange (ETDEWEB)

Sant, Tushar; Pietsch, Ullrich [Solid State Physics Group, University of Siegen, 57068 Siegen (Germany)

2009-07-01

Static speckle experiments were performed using coherent white X-ray radiation from a bending magnet at BESSYII. Semiconductor and polymer surfaces were investigated under incidence condition smaller than the critical angle of total external reflection. The scattering pattern of the sample results from the illumination function modified by the surface roughness. The periodic oscillations are caused by the illumination function whereas other irregular features are associated with sample surface. The speckle map of reflection from a laterally periodic structure like GaAs grating is studied. Under coherent illumination the grating peaks split into speckles because of fluctuations on the sample surface. The surface morphology can be reconstructed using phase retrieval algorithms. In case of 1D problem, these algorithms rarely yield a unique and converging solution. The algorithm is modified to contain additional propagator term and the phase of illumination function in the real space constraint. The modified algorithm converges faster than conventional algorithms. A detailed surface profiles from the real measurements of the sample are reconstructed using this algorithm.

Two-wave mixing in a broad-area semiconductor amplifier

DEFF Research Database (Denmark)

Chi, M.; Jensen, S.B.; Huignard, J.P.

2006-01-01

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

Diffraction efficiency enhancement of femtosecond laser-engraved diffraction gratings due to CO2 laser polishing

International Nuclear Information System (INIS)

Choi, Hun-Kook; Jung, Deok; Sohn, Ik-Bu; Noh, Young-Chul; Lee, Yong-Tak; Kim, Jin-Tae; Ahsan, Shamim

2014-01-01

This research demonstrates laser-assisted fabrication of high-efficiency diffraction gratings in fused-silica glass samples. Initially, femtosecond laser pulses are used to engrave diffraction gratings on the glass surfaces. Then, these micro-patterned glass samples undergo CO 2 laser polishing process. unpolished diffraction gratings encoded in the glass samples show an overall diffraction efficiency of 18.1%. diffraction gratings imprinted on the glass samples and then polished four times by using a CO 2 laser beam attain a diffraction efficiency of 32.7%. We also investigate the diffraction patterns of the diffraction gratings encoded on fused-silica glass surfaces. The proposed CO 2 laser polishing technique shows great potential in patterning high-efficiency diffraction gratings on the surfaces of various transparent materials.

Optical fiber Bragg gratings. Part II. Modeling of finite-length gratings and grating arrays.

Science.gov (United States)

Passaro, Vittorio M N; Diana, Roberto; Armenise, Mario N

2002-09-01

A model of both uniform finite-length optical fiber Bragg gratings and grating arrays is presented. The model is based on the Floquet-Bloch formalism and allows rigorous investigation of all the physical aspects in either single- or multiple-periodic structures realized on the core of a monomodal fiber. Analytical expressions of reflectivity and transmittivity for both single gratings and grating arrays are derived. The influence of the grating length and the index modulation amplitude on the reflected and transmitted optical power for both sinusoidal and rectangular profiles is evaluated. Good agreement between our method and the well-known coupled-mode theory (CMT) approach has been observed for both single gratings and grating arrays only in the case of weak index perturbation. Significant discrepancies exist there in cases of strong index contrast because of the increasing approximation of the CMT approach. The effects of intragrating phase shift are also shown and discussed.

Surface relief grating formation on a single crystal of 4-(dimethylamino)azobenzene

International Nuclear Information System (INIS)

Nakano, Hideyuki; Tanino, Takahiro; Shirota, Yasuhiko

2005-01-01

Surface relief grating (SRG) formation on an organic single crystal by irradiation with two coherent laser beams has been demonstrated by using 4-(dimethylamino)azobenzene (DAAB). It was found that the SRG formation was greatly depending upon both the coordination of the crystal and the polarization of the writing beams. The dependence of the polarization of writing beams on the SRG formation using the single crystal was found to be quite different from that reported for amorphous polymers and photochromic amorphous molecular materials, suggesting that the mechanism of the SRG formation on the organic crystal is somewhat different from that on amorphous materials

Testing of defects in Si semiconductor apparatus by using single-photon detection

International Nuclear Information System (INIS)

Zhongliang, Pan; Ling, Chen; Guangju, Chen

2013-01-01

The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

Simulation Studies of the Dielectric Grating as an Accelerating and Focusing Structure

International Nuclear Information System (INIS)

Soong, Ken; Peralta, E.A.; Byer, R.L.; Colby, E.

2011-01-01

A grating-based design is a promising candidate for a laser-driven dielectric accelerator. Through simulations, we show the merits of a readily fabricated grating structure as an accelerating component. Additionally, we show that with a small design perturbation, the accelerating component can be converted into a focusing structure. The understanding of these two components is critical in the successful development of any complete accelerator. The concept of accelerating electrons with the tremendous electric fields found in lasers has been proposed for decades. However, until recently the realization of such an accelerator was not technologically feasible. Recent advances in the semiconductor industry, as well as advances in laser technology, have now made laser-driven dielectric accelerators imminent. The grating-based accelerator is one proposed design for a dielectric laser-driven accelerator. This design, which was introduced by Plettner, consists of a pair of opposing transparent binary gratings, illustrated in Fig. 1. The teeth of the gratings serve as a phase mask, ensuring a phase synchronicity between the electromagnetic field and the moving particles. The current grating accelerator design has the drive laser incident perpendicular to the substrate, which poses a laser-structure alignment complication. The next iteration of grating structure fabrication seeks to monolithically create an array of grating structures by etching the grating's vacuum channel into a fused silica wafer. With this method it is possible to have the drive laser confined to the plane of the wafer, thus ensuring alignment of the laser-and-structure, the two grating halves, and subsequent accelerator components. There has been previous work using 2-dimensional finite difference time domain (2D-FDTD) calculations to evaluate the performance of the grating accelerator structure. However, this work approximates the grating as an infinite structure and does not accurately model a

Glial cell adhesion and protein adsorption on SAM coated semiconductor and glass surfaces of a microfluidic structure

Science.gov (United States)

Sasaki, Darryl Y.; Cox, Jimmy D.; Follstaedt, Susan C.; Curry, Mark S.; Skirboll, Steven K.; Gourley, Paul L.

2001-05-01

The development of microsystems that merge biological materials with microfabricated structures is highly dependent on the successful interfacial interactions between these innately incompatible materials. Surface passivation of semiconductor and glass surfaces with thin organic films can attenuate the adhesion of proteins and cells that lead to biofilm formation and biofouling of fluidic structures. We have examined the adhesion of glial cells and serum albumin proteins to microfabricated glass and semiconductor surfaces coated with self-assembled monolayers of octadecyltrimethoxysilane and N-(triethoxysilylpropyl)-O- polyethylene oxide urethane, to evaluate the biocompatibility and surface passivation those coatings provide.

Capacity of Wavelength and Time Division Multiplexing for Quasi-Distributed Measurement Using Fiber Bragg Gratings

Directory of Open Access Journals (Sweden)

Marcel Fajkus

2015-01-01

Full Text Available In this paper, an analysis of the use of wavelength and time division multiplexing techniques for quasi-distributed measurement in uniform fiber Bragg gratings is presented. To date, publications have concentrated on the determination of the maximum number of fiber Bragg gratings on one optical fiber using wavelength and time division multiplexing. In this paper, these techniques will be extended to determine the spectral width of wavelength division multiplexing in terms of the spectral width of the light emitting diode, the spectral width of the Bragg gratings, the measurement ranges of the individual sensors, and the guard band between two adjacent Bragg gratings. For time division multiplexing, a description of the time and power conditions are given. In particular the reflected power, first order crosstalk and chromatic dispersion have been considered. Finally, these relationships were applied to verify a design in a simulation using OptiSystem software.

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5�

Integrated X-ray testing of the electro-optical breadboard model for the XMM reflection grating spectrometer

Energy Technology Data Exchange (ETDEWEB)

Bixler, J.V.; Craig, W.; Decker, T. [Lawrence Livermore National Lab., CA (United States); Aarts, H.; Boggende, T. den; Brinkman, A.C. [Space Research Organization Netherlands, Utrecht (Netherlands); Burkert, W.; Brauninger, H. [Max-Planck Institute fur Extraterrestische Physik, Testanlage (Germany); Branduardi-Raymont, G. [Univ. College London (United Kingdom); Dubbeldam, L. [Space Research Organization Netherlands, Leiden (Netherlands)] [and others

1994-07-12

X-ray calibration of the Electro-Optical Breadboard Model (EOBB) of the XXM Reflection Grating Spectrometer has been carried out at the Panter test facility in Germany. The EOBB prototype optics consisted of a four-shell grazing incidence mirror module followed by an array of eight reflection gratings. The dispersed x-rays were detected by an array of three CCDs. Line profile and efficiency measurements where made at several energies, orders, and geometric configurations for individual gratings and for the grating array as a whole. The x-ray measurements verified that the grating mounting method would meet the stringent tolerances necessary for the flight instrument. Post EOBB metrology of the individual gratings and their mountings confirmed the precision of the grating boxes fabrication. Examination of the individual grating surface`s at micron resolution revealed the cause of anomalously wide line profiles to be scattering due to the crazing of the replica`s surface.

Diffraction efficiency enhancement of femtosecond laser-engraved diffraction gratings due to CO{sub 2} laser polishing

Energy Technology Data Exchange (ETDEWEB)

Choi, Hun-Kook [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Chosun University, Gwangju (Korea, Republic of); Jung, Deok; Sohn, Ik-Bu; Noh, Young-Chul; Lee, Yong-Tak [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Jin-Tae [Chosun University, Gwangju (Korea, Republic of); Ahsan, Shamim [Khulna University, Khulna (Bangladesh)

2014-11-15

This research demonstrates laser-assisted fabrication of high-efficiency diffraction gratings in fused-silica glass samples. Initially, femtosecond laser pulses are used to engrave diffraction gratings on the glass surfaces. Then, these micro-patterned glass samples undergo CO{sub 2} laser polishing process. unpolished diffraction gratings encoded in the glass samples show an overall diffraction efficiency of 18.1%. diffraction gratings imprinted on the glass samples and then polished four times by using a CO{sub 2} laser beam attain a diffraction efficiency of 32.7%. We also investigate the diffraction patterns of the diffraction gratings encoded on fused-silica glass surfaces. The proposed CO{sub 2} laser polishing technique shows great potential in patterning high-efficiency diffraction gratings on the surfaces of various transparent materials.

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

On the problem of propagation of magnetoplasma surface waves in semiconductors

International Nuclear Information System (INIS)

Davydov, A.B.; Zakharov, V.A.

1975-01-01

A calculation is made of the spectrum of surface waves traveling along a boundary separating a dielectric from a magnetized semiconductor plasma parallel or at right angles to a magnetic field B. Dispersion relationships are obtained for the k is parallel to B case and these relationships explain the origin of the investigated surface waves on the boundary of a two-component (electron-hole) plasma in InSb. An analysis is made of the dispersion of the surface waves in the k is perpendicular to B case, which leads to a nonreciprocal propagation. (author)

Theoretical modelling of semiconductor surfaces microscopic studies of electrons and photons

CERN Document Server

Srivastava, G P

1999-01-01

The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides

Real-time and online screening method for materials emitting volatile organic compounds

Energy Technology Data Exchange (ETDEWEB)

Kim, Changhyuk [University of Minnesota, Department of Mechanical Engineering (United States); Sul, Yong Tae [Hoseo University (Korea, Republic of); Pui, David Y. H., E-mail: dyhpui@umn.edu [University of Minnesota, Department of Mechanical Engineering (United States)

2016-09-15

In the semiconductor industry, volatile organic compounds (VOCs) in the cleanroom air work as airborne molecular contamination, which reduce the production yield of semiconductor chips by forming nanoparticles and haze on silicon wafers and photomasks under ultraviolet irradiation during photolithography processes. Even though VOCs in outdoor air are removed by gas filters, VOCs can be emitted from many kinds of materials used in cleanrooms, such as organic solvents and construction materials (e.g., adhesives, flame retardants and sealants), threatening the production of semiconductors. Therefore, finding new replacements that emit lower VOCs is now essential in the semiconductor industry. In this study, we developed a real-time and online method to screen materials for developing the replacements by converting VOCs into nanoparticles under soft X-ray irradiation. This screening method was applied to measure VOCs emitted from different kinds of organic solvents and adhesives. Our results showed good repeatability and high sensitivity for VOCs, which come from aromatic compounds, some alcohols and all tested adhesives (Super glue and cleanroom-use adhesives). In addition, the overall trend of measured VOCs from cleanroom-use adhesives was well matched with those measured by a commercial thermal desorption–gas chromatography–mass spectrometry, which is a widely used off-line method for analyzing VOCs. Based on the results, this screening method can help accelerate the developing process for reducing VOCs in cleanrooms.

Discrete dipole approximation simulation of bead enhanced diffraction grating biosensor

International Nuclear Information System (INIS)

Arif, Khalid Mahmood

2016-01-01

We present the discrete dipole approximation simulation of light scattering from bead enhanced diffraction biosensor and report the effect of bead material, number of beads forming the grating and spatial randomness on the diffraction intensities of 1st and 0th orders. The dipole models of gratings are formed by volume slicing and image processing while the spatial locations of the beads on the substrate surface are randomly computed using discrete probability distribution. The effect of beads reduction on far-field scattering of 632.8 nm incident field, from fully occupied gratings to very coarse gratings, is studied for various bead materials. Our findings give insight into many difficult or experimentally impossible aspects of this genre of biosensors and establish that bead enhanced grating may be used for rapid and precise detection of small amounts of biomolecules. The results of simulations also show excellent qualitative similarities with experimental observations. - Highlights: • DDA was used to study the relationship between the number of beads forming gratings and ratio of first and zeroth order diffraction intensities. • A very flexible modeling program was developed to design complicated objects for DDA. • Material and spatial effects of bead distribution on surfaces were studied. • It has been shown that bead enhanced grating biosensor can be useful for fast detection of small amounts of biomolecules. • Experimental results qualitatively support the simulations and thus open a way to optimize the grating biosensors.

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Organic semiconductors in sensor applications

CERN Document Server

Malliaras, George; Owens, Róisín

2008-01-01

Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

Some specific features of a surface-screw plasma instability in semiconductors

International Nuclear Information System (INIS)

Karavaev, G.F.; Tsipivka, Yu.I.

1976-01-01

A numerical analysis of the dispersion relation has been carried out, which enables to discover some new peculiarities in the behaviour of the surface helical instability (SHI) of a semiconductor plasma. To simplify the dispersion relation a semiconductor with nearly equal electron and hole mobilities has been considered. The dependences of threshold characteristics of SHI on a magnetic field H for different angular harmonics are represented graphically. A comparison of the formulas obtained shows that the approximation of truncated series yields an incorrect qualitative dependence of the wavelength on H, whereas asymptotic formulas in the range of strong magnetic fields yield not only a correct qualitative dependence of the threshold characteristics on H, but also a good quantitative agreement

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

KMC Simulation of Surface Growth of Semiconductors

International Nuclear Information System (INIS)

Esen, M.

2004-01-01

In this work we have studied the growth and equilibration of semiconductor surfaces consisting of monoatomic steps separated by flat terraces using kinetic Monte Carlo method. Atomistic processes such as diffusion on terraces, attachment/detachment particles to/from step edges, attachment of particles from an upper terrace to a bounding step, diffusion of particles along step edges are considered. A rate equation for each, these processes is written and the overall transition probabilities are calculated where processes are ordered to make the distinction between slow and fast processes Iractal The interaction of steps is also included in the calculation of rate equations. The growth of such a surface is simulated when there is a particle flux to the surface. The rough of the surface and its dependence on both temperature and kinetic parameters such edge diffusion barrier are investigated. The formation of islands on terraces is prohibited and the distribution of their number and sizes are investigated as a function of temperature and appropriate kinetic parameters. In the absence of a flux to the surface, the equilibration of the surface is investigated paying particular attention to the top of the profile when the initial surface is a periodic profile where parallel monoatomic steps separated by terraces. It is observed that during equilibration of the profile, the topmost step disintegrates quickly and leads to many islands on the top of the profile due to. collision and annihilation of step edges of opposite sign. The islands then quickly disintegrate due to the line tension effect and this scenario repeats itself until the surface completely flattens

Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

Science.gov (United States)

Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

2014-09-24

Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

Directory of Open Access Journals (Sweden)

Beata Bajorowicz

2014-09-01

Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

Surface Modified Long Period Fiber Grating Sensor for Rapid Detection of Aspergillus Niger Fungal Spores

Science.gov (United States)

Gambhir, Monika; Gupta, Shilpi; John, Priya; Mahakud, Ramakanta; Kumar, Jitendra; Prakash, Om

2018-03-01

We present development of a compact and label-free sensor based on the surface modification of copper vapor laser fabricated long period fiber gratings for detection of airborne Aspergillus niger (A. niger) fungal spores. Surface of sensors were functionalized with monoclonal glucose oxidases IgG1 for target-specific covalent binding. In process of functionalization and binding of 103 cfu/ml of pathogenic A. niger fungal spores, notable shorter wave transition in resonance wavelength from 1562.93 nm to 1555.97 nm, and significant reduction in peak loss from 61.72 dB to 57.48 dB were recorded. The implementation was cost effective and yielded instantaneous results.

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

Science.gov (United States)

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

International Nuclear Information System (INIS)

Wen Feng; Liu Deming; Huang Lirong

2010-01-01

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Wen Feng; Liu Deming; Huang Lirong, E-mail: hlr5649@163.co [Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2010-10-15

The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED. (semiconductor devices)

Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

Science.gov (United States)

Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

2018-05-01

Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

Terahertz plasmonics with semiconductor surfaces and antennas

NARCIS (Netherlands)

Gómez Rivas, J.; Berrier, A.

2009-01-01

Semiconductors have a Drude-like behavior at terahertz (THz) frequencies similar to metals at optical frequencies. Narrow band gap semiconductors have a dielectric constant with a negative real component and a relatively small imaginary component. This permittivity is characteristic of noble metals

Thiazole-based organic semiconductors for organic electronics.

Science.gov (United States)

Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

2012-06-19

Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

OpenAIRE

Weimer, M.; Kramar, J.; Bai, C.; Baldeschwieler, J. D.

1988-01-01

Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

Science.gov (United States)

Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

2016-05-15

A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

Energy Technology Data Exchange (ETDEWEB)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

International Nuclear Information System (INIS)

Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

2016-01-01

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Photonic effects in microstructured conjugated polymer films and light emitting diodes

International Nuclear Information System (INIS)

Matterson, B.J.

2002-03-01

This thesis reports an investigation into the photonic effects caused by wavelength scale microstructure patterned onto films of conjugated polymers. The efficiency of light emitting diodes (LEDs) made from conjugated polymers is limited in part by the trapping of light into waveguide modes caused by the high refractive index of these materials. Waveguide modes in films of poly(p,-phenylene vinylene) (PPV) and poly(2-methoxy, 5-(2'ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) are analysed and the refractive index of these materials is calculated. The photoluminescence of conjugated polymer films that have been spun onto textured substrates is analysed. It is found that the photoluminescence quantum yield of a film spun onto a substrate inscribed with a grating is increased. It is also found that the photoluminescence spectrum of the film is dramatically altered and varies substantially with viewing angle. The features in the spectrum caused by the grating are strongly polarized. These effects are analysed and are attributed to the scattering of waveguided light out of the film. It is found that films spun onto metal gratings exhibit especially strong scattering. The effect of metal gratings with various grating depths is analysed. The possible contribution of band gaps to the photoluminescence spectrum from polymers on strong metal gratings is discussed. LEDs that include grating structures are constructed and analysed. It is found that having grating structures on the metal layers that are used as electrodes in the LED does not adversely affect the electrical properties of the LED. It is demonstrated that grating in the LED is able to substantially increase the light emission without using extra electrical power. The emission spectra from LEDs are observed to vary with angle, and exhibit considerable polarization. (author)

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Progress of pyrene-based organic semiconductor in organic field effect transistors

Institute of Scientific and Technical Information of China (English)

Yanbin; Gong; Xuejun; Zhan; Qianqian; Li; Zhen; Li

2016-01-01

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.

Bandwidth-Tunable Fiber Bragg Gratings Based on UV Glue Technique

Science.gov (United States)

Fu, Ming-Yue; Liu, Wen-Feng; Chen, Hsin-Tsang; Chuang, Chia-Wei; Bor, Sheau-Shong; Tien, Chuen-Lin

2007-07-01

In this study, we have demonstrated that a uniform fiber Bragg grating (FBG) can be transformed into a chirped fiber grating by a simple UV glue adhesive technique without shifting the reflection band with respect to the center wavelength of the FBG. The technique is based on the induced strain of an FBG due to the UV glue adhesive force on the fiber surface that causes a grating period variation and an effective index change. This technique can provide a fast and simple method of obtaining the required chirp value of a grating for applications in the dispersion compensators, gain flattening in erbium-doped fiber amplifiers (EDFAs) or optical filters.

Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

Science.gov (United States)

Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

2018-01-01

The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

ZnSe Light Emitting Diode Quantum Efficiency and Emission Characterization

Directory of Open Access Journals (Sweden)

Sahbudin U.K.

2016-01-01

Full Text Available ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors. This II-VI compound semiconductor with a direct and wide band gap is used in the study which focused on a preparation and its characterization. The device is developed using a circular chip of ZnSe but only part of the active region is designed to allow shorter computation time. Analyses of the proposed LED are performed in an environment that allows optical transition and nonradiative recombination mechanisms. Voltage variation from 0 V to 1.5 V is maintained throughout the observation. The curent-voltage plot shows the p-n junction or diode behavior with central emissive layer. The two dimensions surface emission rate obtained indicates that voltage increment causes the emission concentration to become higher near the central pcontact. The LED efficiency is assessed in terms of internal quantum efficiency and emitting rate.

Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

2012-01-01

Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

Grism and immersion grating for space telescope

Science.gov (United States)

Ebizuka, Noboru; Oka, Kiko; Yamada, Akiko; Ishikawa, Mami; Kashiwagi, Masako; Kodate, Kashiko; Hirahara, Yasuhiro; Sato, Shuji; Kawabata, Koji S.; Wakaki, Moriaki; Morita, Shin-ya; Simizu, Tomoyuki; Yin, Shaohui; Omori, Hitoshi; Iye, Masanori

2017-11-01

The grism is a versatile dispersion element for an astronomical instrument ranging from ultraviolet to infrared. Major benefit of using a grism in a space application, instead of a reflection grating, is the size reduction of optical system because collimator and following optical elements could locate near by the grism. The surface relief (SR) grism is consisted a transmission grating and a prism, vertex angle of which is adjusted to redirect the diffracted beam straight along the direct vision direction at a specific order and wavelength. The volume phase holographic (VPH) grism consists a thick VPH grating sandwiched between two prisms, as specific order and wavelength is aligned the direct vision direction. The VPH grating inheres ideal diffraction efficiency on a higher dispersion application. On the other hand, the SR grating could achieve high diffraction efficiency on a lower dispersion application. Five grisms among eleven for the Faint Object Camera And Spectrograph (FOCAS) of the 8.2m Subaru Telescope with the resolving power from 250 to 3,000 are SR grisms fabricated by a replication method. Six additional grisms of FOCAS with the resolving power from 3,000 to 7,000 are VPH grisms. We propose "Quasi-Bragg grism" for a high dispersion spectroscopy with wide wavelength range. The germanium immersion grating for instance could reduce 1/64 as the total volume of a spectrograph with a conventional reflection grating since refractive index of germanium is over 4.0 from 1.6 to 20 μm. The prototype immersion gratings for the mid-InfraRed High dispersion Spectrograph (IRHS) are successfully fabricated by a nano-precision machine and grinding cup of cast iron with electrolytic dressing method.

Nano-Gap Embedded Plasmonic Gratings for Surface Plasmon Enhanced Fluorescence

Science.gov (United States)

Bhatnagar, Kunal; Bok, Sangho; Korampally, Venumadhav; Gangopadhyay, Shubhra

2012-02-01

Plasmonic nanostructures have been extensively used in the past few decades for applications in sub-wavelength optics, data storage, optoelectronic circuits, microscopy and bio-photonics. The enhanced electromagnetic field produced at the metal/dielectric interface by the excitation of surface plasmons via incident radiation can be used for signal enhancement in fluorescence and surface enhanced Raman scattering studies. Novel plasmonic structures on the sub wavelength scale have been shown to provide very efficient and extreme light concentration at the nano-scale. The enhanced electric field produced within a few hundred nanometers of these structures can be used to excite fluorophores in the surrounding environment. Fluorescence based bio-detection and bio-imaging are two of the most important tools in the life sciences. Improving the qualities and capabilities of fluorescence based detectors and imaging equipment has been a big challenge to the industry manufacturers. We report the novel fabrication of nano-gap embedded periodic grating substrates on the nanoscale using micro-contact printing and polymethylsilsesquioxane (PMSSQ) polymer. Fluorescence enhancement of up to 118 times was observed with these silver nanostructures in conjugation with Rhodamine-590 fluorescent dye. These substrates are ideal candidates for low-level fluorescence detection and single molecule imaging.

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Mechanism of optical unidirectional transmission in subwavelength dual-metal gratings

Science.gov (United States)

Gao, H.; Zheng, Z. Y.; Hao, H. Y.; Dong, A. G.; Fan, Z. J.; Liu, D. H.

2014-03-01

The mechanism of optical unidirectional (OUD) transmission in parallel subwavelength dual-metal gratings was investigated. It was found that this kind of OUD phenomenon originates from the coupling of the surface plasmon polaritons (SPPs) between the front grating and a layer of metal film which replaces the rear grating. The higher the intensity of the coupled SPPs at the entrances of the rear grating, the higher the transmittance can be achieved. Basing on this property, an effective OUD example was achieved by exploring the intensity difference at the entrances of the rear gratings between the two incidences of opposite directions. In this kind of OUD, the positive transmittance can exceed 80 % and the difference between the transmittances of the two opposite directions can be as large as 63 %. The detailed design process was also presented.

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Optimized chaotic Brillouin dynamic grating with filtered optical feedback.

Science.gov (United States)

Zhang, Jianzhong; Li, Zhuping; Wu, Yuan; Zhang, Mingjiang; Liu, Yi; Li, Mengwen

2018-01-16

Chaotic Brillouin dynamic gratings (BDGs) have special advantages such as the creation of single, permanent and localized BDG. However, the periodic signals induced by conventional optical feedback (COF) in chaotic semiconductor lasers can lead to the generation of spurious BDGs, which will limit the application of chaotic BDGs. In this paper, filtered optical feedback (FOF) is proposed to eliminate spurious BDGs. By controlling the spectral width of the optical filter and its detuning from the laser frequency, semiconductor lasers with FOF operate in the suppression region of the time-delay signature, and chaotic outputs serving as pump waves are then utilized to generate the chaotic BDG in a polarization maintaining fiber. Through comparative analysis of the COF and FOF schemes, it has been demonstrated that spurious BDGs are effectively eliminated and that the reflection characterization of the chaotic BDG is improved. The influence of FOF on the reflection and gain spectra of the chaotic BDG is analyzed as well.

GaN light-emitting device based on ionic liquid electrolyte

Science.gov (United States)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Compound grating structures in photonic crystals for resonant excitation of azobenzene

DEFF Research Database (Denmark)

Jahns, Sabrina; Kallweit, Christine; Adam, Jost

Photo-switchable molecules such as azobenzene are of high interest for “smart” surfaces. Such “smart” surfaces respond to external light excitation by changing their macroscopic properties. The absorbance of light on a single normal path through a layer of azobenzene immobilized on a surface......-difference time-domain (FDTD) calculations for determination of resonance positions and electric field strengths in compound grating structures. By superimposing two single-period gratings a photonic crystal can be designed supporting multiple guided mode resonances suitable to switch azobenzenes between...

Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

International Nuclear Information System (INIS)

Grigor'ev, A.I.

2000-01-01

The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Diffraction efficiency of plasmonic gratings fabricated by electron beam lithography using a silver halide film

Energy Technology Data Exchange (ETDEWEB)

Sudheer,, E-mail: sudheer@rrcat.gov.in, E-mail: sudheer.rrcat@gmail.com; Tiwari, P.; Srivastava, Himanshu; Rai, V. N.; Srivastava, A. K.; Naik, P. A. [Homi Bhabha National Institute, Mumbai, Maharashtra 400094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Porwal, S. [Solid State Lasers Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Bhartiya, S. [Homi Bhabha National Institute, Mumbai, Maharashtra 400094 (India); Laser Materials Development and Device Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Rao, B. T. [Homi Bhabha National Institute, Mumbai, Maharashtra 400094 (India); Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Sharma, T. K. [Homi Bhabha National Institute, Mumbai, Maharashtra 400094 (India); Solid State Lasers Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

2016-07-28

The silver nanoparticle surface relief gratings of ∼10 μm period are fabricated using electron beam lithography on the silver halide film substrate. Morphological characterization of the gratings shows that the period, the shape, and the relief depth in the gratings are mainly dependent on the number of lines per frame, the spot size, and the accelerating voltage of electron beam raster in the SEM. Optical absorption of the silver nanoparticle gratings provides a broad localized surface plasmon resonance peak in the visible region, whereas the intensity of the peaks depends on the number density of silver nanoparticles in the gratings. The maximum efficiency of ∼7.2% for first order diffraction is observed for the grating fabricated at 15 keV. The efficiency is peaking at 560 nm with ∼380 nm bandwidth. The measured profiles of the diffraction efficiency for the gratings are found in close agreement with the Raman-Nath diffraction theory. This technique provides a simple and efficient method for the fabrication of plasmonic nanoparticle grating structures with high diffraction efficiency having broad wavelength tuning.

Occurrence of polycyclic aromatic hydrocarbons in dust emitted from circulating fluidized bed boilers.

Science.gov (United States)

Kozielska, B; Konieczyńiski, J

2008-11-01

Occurrence of polycyclic aromatic hydrocarbons (PAHs) in granulometric fractions of dust emitted from a hard coal fired circulating fluidized bed (CFB) boiler was investigated. The dust was sampled with the use of a Mark III impactor. In each fraction of dust, by using gas chromatography (GC), 16 selected PAHs and total PAHs were determined and the toxic equivalent B(a)P (TE B(a)P) was computed. The results, recalculated for the standard granulometric fractions, are presented as concentrations and content of the determined PAHs in dust. Distributions of PAHs and their profiles in the granulometric dust fractions were studied also. The PAHs in dust emitted from the CFB boiler were compared with those emitted from mechanical grate boilers; a distinctly lower content of PAHs was found in dust emitted from the former.

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Single-Molecule Detection in Nanogap-Embedded Plasmonic Gratings

Directory of Open Access Journals (Sweden)

Biyan Chen

2015-07-01

Full Text Available We introduce nanogap-embedded silver plasmonic gratings for single-molecule (SM visualization using an epifluorescence microscope. This silver plasmonic platform was fabricated by a cost-effective nano-imprint lithography technique, using an HD DVD template. DNA/ RNA duplex molecules tagged with Cy3/Cy5 fluorophores were immobilized on SiO 2 -capped silver gratings. Light was coupled to the gratings at particular wavelengths and incident angles to form surface plasmons. The SM fluorescence intensity of the fluorophores at the nanogaps showed approximately a 100-fold mean enhancement with respect to the fluorophores observed on quartz slides using an epifluorescence microscope. This high level of enhancement was due to the concentration of surface plasmons at the nanogaps. When nanogaps imaged with epifluorescence mode were compared to quartz imaged using total internal reflection fluorescence (TIRF microscopy, more than a 30-fold mean enhancement was obtained. Due to the SM fluorescence enhancement of plasmonic gratings and the correspondingly high emission intensity, the required laser power can be reduced, resulting in a prolonged detection time prior to photobleaching. This simple platform was able to perform SM studies with a low-cost epifluorescence apparatus, instead of the more expensive TIRF or confocal microscopes, which would enable SM analysis to take place in most scientific laboratories.

Grating scattering BRDF and imaging performances: A test survey performed in the frame of the flex mission

Science.gov (United States)

Harnisch, Bernd; Deep, Atul; Vink, Ramon; Coatantiec, Claude

2017-11-01

Key components in optical spectrometers are the gratings. Their influence on the overall infield straylight of the spectrometer depends not only on the technology used for grating fabrication but also on the potential existence of ghost images caused by irregularities of the grating constant. For the straylight analysis of spectrometer no general Bidirectional Reflectance Distribution Function (BRDF) model of gratings exist, as it does for optically smooth surfaces. These models are needed for the determination of spectrometer straylight background and for the calculation of spectrometer out of band rejection performances. Within the frame of the Fluorescence Earth Explorer mission (FLEX), gratings manufactured using different technologies have been investigated in terms of straylight background and imaging performance in the used diffraction order. The gratings which have been investigated cover a lithographically written grating, a volume Bragg grating, two holographic gratings and an off-the-shelf ruled grating. In this paper we present a survey of the measured bidirectional reflectance/transmittance distribution function and the determination of an equivalent surface micro-roughness of the gratings, describing the scattering of the grating around the diffraction order. This is specifically needed for the straylight modeling of the spectrometer.

Architectures for Improved Organic Semiconductor Devices

Science.gov (United States)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

Science.gov (United States)

Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Rotated grating coupled surface plasmon resonance on wavelength-scaled shallow rectangular gratings

Science.gov (United States)

Szalai, A.; Szekeres, G.; Balázs, J.; Somogyi, A.; Csete, Maria

2013-09-01

Theoretical investigation of rotated grating coupling phenomenon was performed on a multilayer comprising 416-nmperiodic shallow rectangular polymer grating on bimetal film made of gold and silver layers. During the multilayer illumination by 532 nm wavelength p-polarized light the polar and azimuthal angles were varied. In presence of 0-35 nm, 0-50 nm and 15-50 nm thick polymer-layers at the valleys and hills splitting was observed on the dual-angle dependent reflectance in two regions: (i) close to 0° azimuthal angle corresponding to incidence plane parallel to the periodic pattern (P-orientation); and (ii) around ~33.5°/29°/30° azimuthal angle (C-orientation), in agreement with our previous experimental studies. The near-field study revealed that in P-orientation the E-field is enhanced at the glass side with p/2 periodicity at the first minimum appearing at 49°/50°/52° polar angles, and comprises maxima below both the valleys and hills; while E-field enhancement is observable both at the glass and polymer side with p-periodicity at the second minimum developing at 55°/63/64° tilting, comprising maxima intermittently below the valleys or above the hills. In Corientation coupled plasmonic modes are observable, involving modes propagating along the valleys at the secondary maxima appearing at ~35°/32°/32° azimuthal and ~49°/51°/56° polar angles, while modes confined along the polymer hills are observable at the primary minima, which are coupled most strongly at the ~31.5°/25°/28° azimuthal and ~55°/63°/66° polar angles. The secondary peak observable in C-orientation is proposed for biosensing applications, since the supported modes are confined along the valleys, where biomolecules prefer to attach.

High efficiency multilayer blazed gratings for EUV and soft X-rays: Recent developments

International Nuclear Information System (INIS)

Voronov, Dmitriy; Ahn, Minseung; Anderson, Erik; Cambie, Rossana; Chang, Chih-Hao; Goray, Leonid; Gullikson, Eric; Heilmann, Ralf; Salmassi, Farhad; Schattenburg, Mark; Warwick, Tony; Yashchuk, Valeriy; Padmore, Howard

2011-01-01

Multilayer coated blazed gratings with high groove density are the best candidates for use in high resolution EUV and soft x-ray spectroscopy. Theoretical analysis shows that such a grating can be potentially optimized for high dispersion and spectral resolution in a desired high diffraction order without significant loss of diffraction efficiency. In order to realize this potential, the grating fabrication process should provide a perfect triangular groove profile and an extremely smooth surface of the blazed facets. Here we report on recent progress achieved at the Advanced Light Source (ALS) in fabrication of high quality multilayer coated blazed gratings. The blazed gratings were fabricated using scanning beam interference lithography followed by wet anisotropic etching of silicon. A 200 nm period grating coated with a Mo/Si multilayer composed with 30 bi-layers demonstrated an absolute efficiency of 37.6percent in the 3rd diffraction order at 13.6 nm wavelength. The groove profile of the grating was thoroughly characterized with atomic force microscopy before and after the multilayer deposition. The obtained metrology data were used for simulation of the grating efficiency with the vector electromagnetic PCGrate-6.1 code. The simulations showed that smoothing of the grating profile during the multilayer deposition is the main reason for efficiency losses compared to the theoretical maximum. Investigation of the grating with cross-sectional transmission electron microscopy revealed a complex evolution of the groove profile in the course of the multilayer deposition. Impact of the shadowing and smoothing processes on growth of the multilayer on the surface of the sawtooth substrate is discussed.

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

The nonlinear carrier transport in a bipolar semiconductor sample

International Nuclear Information System (INIS)

Konin, A

2008-01-01

A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

A charge inverter for III-nitride light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Geng, Chong; Xu, Shu [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401 (China); Demir, Hilmi Volkan, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey); Sun, Xiao Wei, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronic Engineering, College of Engineering, South University of Science and Technology, 1088 Xue-Yuan Road, Nanshan, Shenzhen, Guangdong 518055 (China)

2016-03-28

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

A charge inverter for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO 2 insulator layer on the p + -GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p + -GaN and SiO 2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO 2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p + -GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm 2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

Double surface plasmon enhanced organic light-emitting diodes by gold nanoparticles and silver nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-12-30

Graphical abstract: - Highlights: • The buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated. • The silver nanoclusters will generate surface plasmon resonance effect, resulting that the localized electric field around the silver nanoclusters is enhanced. • When the recombination region of the excitons is too close to the nanoparticles of the hole-transport layer, the nonradiative quenching of excitons is generated. - Abstract: The influence of gold nanoparticles (GNPs) and silver nanoclusters (SNCs) on the performance of organic light-emitting diodes is investigated in this study. The GNPs are doped into (poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate)) (PEDOT: PSS) and the SNCs are introduced between the electron-injection layer and cathode alumina. The power efficiency of the device, at the maximum luminance, with double surface plasmon resonance and buffer layer is about 2.15 times higher than that of the device without GNPs and SNCs because the absorption peaks of GNPs and SNCs are as good as the photoluminescence peak of the emission layer, resulting in strong surface plasmon resonance effect in the device. In addition, the buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

DEFF Research Database (Denmark)

McCulloch, I.; Bailey, C.; Genevicius, K.

2006-01-01

organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes...... the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed...

Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

KAUST Repository

Yu, Weili

2014-08-22

Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

Surface modification-a novel way of attaching cocatalysts on CdS semiconductors for photocatalytic hydrogen evolution

KAUST Repository

Yu, Weili; Isimjan, Tayirjan; Lin, Bin; Takanabe, Kazuhiro

2014-01-01

Noble metals as cocatalysts for hydrogen evolution are widely investigated for semiconductor photocatalytic water splitting. In this paper, we present a novel way to attach not only noble metals, but also transitional metals onto CdS nanocrystals as cocatalysts for hydrogen evolution. The hydrogen evolution performances for each metal were compared and result shows that Pd attached CdS gives the highest hydrogen evolution rate of 250 μmol/h. The amounts of metal ions attached on the surface were measured by inductively coupled plasma optical emission spectrometry (ICP-OES). This work confirms that surface modification is a promising way of attaching cocatalysts onto semiconductor photocatalysts.

Transmission formalism for supercurrent flow in multiprobe superconductor-semiconductor-superconductor devices

International Nuclear Information System (INIS)

van Wees, B.J.; Lenssen, K.H.; Harmans, C.J.P.M.

1991-01-01

A theoretical study is given of supercurrent flow in a one-dimensional semiconductor channel coupled to superconductors at both ends. In addition, the channel is coupled to a semiconductor reservoir by means of a junction with variable coupling strength var-epsilon. The supercurrent I(cphi) is calculated from the phase-coherent propagation of electronlike and holelike excitations emitted by the superconductor reservoirs, together with electron and hole excitations from the semiconductor reservoir. The effect of temperature and var-epsilon on I(cphi) is studied. It is shown that a voltage applied between the semiconductor reservoir and the superconductors modifies the I(cphi) relation, even in the limit var-epsilon →0

Surface-enhanced Raman effect in hybrid metal–semiconductor nanoparticle assemblies

International Nuclear Information System (INIS)

Lughi, Vanni; Bonifacio, Alois; Barbone, Matteo; Marsich, Lucia; Sergo, Valter

2013-01-01

Hybrid metal–semiconductor nanoparticles consisting of silver nanoparticle cores (AgNPs) coated with a layer of CdSe quantum dots (QDs) have been studied by Raman spectroscopy. The hybrid nanoparticles were prepared via electrostatic interaction by mixing aqueous suspensions of QDs and AgNPs, where opposite charges on the AgNPs and QDs surfaces were induced by opportunely selected capping agents. Assemblies of such hybrid nanoparticles show an increased intensity of the Raman spectrum of up to 500 times, when compared to that of the sole QDs. This enhancement is attributed to the SERS effect (Surface-enhanced Raman scattering). Such enhancement of the Raman modes suggests several opportunities for further research, both in imaging and sensing applications.

Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Ning, C. Z.; Goorjian, P.

2001-01-01

We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

Point-by-point written fiber-Bragg gratings and their application in complex grating designs.

Science.gov (United States)

Marshall, Graham D; Williams, Robert J; Jovanovic, Nemanja; Steel, M J; Withford, Michael J

2010-09-13

The point-by-point technique of fabricating fibre-Bragg gratings using an ultrafast laser enables complete control of the position of each index modification that comprises the grating. By tailoring the local phase, amplitude and spacing of the grating's refractive index modulations it is possible to create gratings with complex transmission and reflection spectra. We report a series of grating structures that were realized by exploiting these flexibilities. Such structures include gratings with controlled bandwidth, and amplitude- and phase-modulated sampled (or superstructured) gratings. A model based on coupled-mode theory provides important insights into the manufacture of such gratings. Our approach offers a quick and easy method of producing complex, non-uniform grating structures in both fibres and other mono-mode waveguiding structures.

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Science.gov (United States)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

Science.gov (United States)

Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

2018-05-01

We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

Modeling, simulation, and design of SAW grating filters

Science.gov (United States)

Schwelb, Otto; Adler, E. L.; Slaboszewicz, J. K.

1990-05-01

A systematic procedure for modeling, simulating, and designing SAW (surface acoustic wave) grating filters, taking losses into account, is described. Grating structures and IDTs (interdigital transducers) coupling to SAWs are defined by cascadable transmission-matrix building blocks. Driving point and transfer characteristics (immittances) of complex architectures consisting of gratings, transducers, and coupling networks are obtained by chain-multiplying building-block matrices. This modular approach to resonator filter analysis and design combines the elements of lossy filter synthesis with the transmission-matrix description of SAW components. A multipole filter design procedure based on a lumped-element-model approximation of one-pole two-port resonator building blocks is given and the range of validity of this model examined. The software for simulating the performance of SAW grating devices based on this matrix approach is described, and its performance, when linked to the design procedure to form a CAD/CAA (computer-aided design and analysis) multiple-filter design package, is illustrated with a resonator filter design example.

Aplanatic grazing incidence diffraction grating: a new optical element

International Nuclear Information System (INIS)

Hettrick, M.C.

1986-01-01

We present the theory of a grazing incidence reflection grating capable of imaging at submicron resolution. The optic is mechanically ruled on a spherical or cylindrical surface with varied groove spacings, delivering diffraction-limited response and a wide field of view at a selected wavelength. Geometrical aberrations are calculated on the basis of Fermat's principle, revealing significant improvements over a grazing incidence mirror. Aplanatic and quasi-aplanatic versions of the grating have applications in both imaging and scanning microscopes, microprobes, collimators, and telescopes. A 2-D crossed system of such gratings, similar to the grazing incidence mirror geometry of Kirkpatrick and Baez, could potentially provide spatial resolutions of --200 A

Green synthesis of water soluble semiconductor nanocrystals and their applications

Science.gov (United States)

Wang, Ying

II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as

Ultra-Weak Fiber Bragg Grating Sensing Network Coated with Sensitive Material for Multi-Parameter Measurements

OpenAIRE

Bai, Wei; Yang, Minghong; Hu, Chenyuan; Dai, Jixiang; Zhong, Xuexiang; Huang, Shuai; Wang, Gaopeng

2017-01-01

A multi-parameter measurement system based on ultra-weak fiber Bragg grating (UFBG) array with sensitive material was proposed and experimentally demonstrated. The UFBG array interrogation principle is time division multiplex technology with two semiconductor optical amplifiers as timing units. Experimental results showed that the performance of the proposed UFBG system is almost equal to that of traditional FBG, while the UFBG array system has obvious superiority with potential multiplexing ...

Two-dimensional grating guided-mode resonance tunable filter.

Science.gov (United States)

Kuo, Wen-Kai; Hsu, Che-Jung

2017-11-27

A two-dimensional (2D) grating guided-mode resonance (GMR) tunable filter is experimentally demonstrated using a low-cost two-step nanoimprinting technology with a one-dimensional (1D) grating polydimethylsiloxane mold. For the first nanoimprinting, we precisely control the UV LED irradiation dosage and demold the device when the UV glue is partially cured and the 1D grating mold is then rotated by three different angles, 30°, 60°, and 90°, for the second nanoimprinting to obtain 2D grating structures with different crossing angles. A high-refractive-index film ZnO is then coated on the surface of the grating structure to form the GMR filter devices. The simulation and experimental results demonstrate that the passband central wavelength of the filter can be tuned by rotating the device to change azimuth angle of the incident light. We compare these three 2D GMR filters with differential crossing angles and find that the filter device with a crossing angle of 60° exhibits the best performance. The tunable range of its central wavelength is 668-742 nm when the azimuth angle varies from 30° to 90°.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

The spectral combination characteristic of grating and the bi-grating diffraction imaging effect

Institute of Scientific and Technical Information of China (English)

2007-01-01

This paper reports on a new property of grating, namely spectral combination, and on bi-grating diffraction imaging that is based on spectral combination. The spectral combination characteristic of a grating is the capability of combining multiple light beams of different wavelengths incident from specific angles into a single beam. The bi-grating diffraction imaging is the formation of the image of an object with two gratings: the first grating disperses the multi-color light beams from the object and the second combines the dispersed light beams to form the image. We gave the conditions necessary for obtaining the spectral combination. We also presented the equations that relate the two gratings’ spatial frequencies, diffraction orders and positions necessary for obtaining the bi-grating diffraction imaging.

Quasi-one-dimensional metals on semiconductor surfaces with defects

International Nuclear Information System (INIS)

Hasegawa, Shuji

2010-01-01

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

Surface electron structure of short-period semiconductor superlattice

International Nuclear Information System (INIS)

Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

2004-01-01

Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

International Nuclear Information System (INIS)

Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

2013-01-01

We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Electronic transport at semiconductor surfaces - from point-contact transistor to micro-four-point probes

DEFF Research Database (Denmark)

Hasegawa, S.; Grey, Francois

2002-01-01

show that this type of conduction is measurable using new types of experimental probes, such as the multi-tip scanning tunnelling microscope and the micro-four-point probe. The resulting electronic transport properties are intriguing, and suggest that semiconductor surfaces should be considered...

A semiconductor metasurface with multiple functionalities: A polarizing beam splitter with simultaneous focusing ability

Energy Technology Data Exchange (ETDEWEB)

Lee, Jun Hyung; Jin Jung, Myoung; Ho Song, Seok, E-mail: shsong@hanyang.ac.kr [Department of Physics, Hanyang University, Seoul (Korea, Republic of); Woong Yoon, Jae; Magnusson, Robert [Department of Electrical Engineering, University of Texas–Arlington, Arlington, Texas 76019 (United States); Kyun Hong, Jong [Department of Electrical Engineering, Hanyang University, Seoul (Korea, Republic of)

2014-06-09

We propose a semiconductor metasurface that simultaneously performs two independent functions: focusing and polarization filtering. The wavefronts of the reflected and transmitted light distributions are precisely manipulated by spatial parametric variation of a subwavelength thin-film Si grating, which inherently possesses polarization filtering properties. We design a 12-μm-wide metasurface containing only nineteen Si grating ridges. Under a 10-μm-wide unpolarized Gaussian beam incidence at wavelength of 1.55 μm, the resulting device shows promising theoretical performance with high power efficiency exceeding 80% and polarization extinction ratio of ∼10 dB with focal spot diameters near 1–2 μm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Influence of impurities on the surface morphology of the TIBr crystal semiconductor

International Nuclear Information System (INIS)

Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

2013-01-01

The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

Fabrication update on critical-angle transmission gratings for soft x-ray grating spectrometers

Science.gov (United States)

Heilmann, Ralf K.; Bruccoleri, Alex; Mukherjee, Pran; Yam, Jonathan; Schattenburg, Mark L.

2011-09-01

Diffraction grating-based, wavelength dispersive high-resolution soft x-ray spectroscopy of celestial sources promises to reveal crucial data for the study of the Warm-Hot Intergalactic Medium, the Interstellar Medium, warm absorption and outflows in Active Galactic Nuclei, coronal emission from stars, and other areas of interest to the astrophysics community. Our recently developed critical-angle transmission (CAT) gratings combine the advantages of the Chandra high and medium energy transmission gratings (low mass, high tolerance of misalignments and figure errors, polarization insensitivity) with those of blazed reflection gratings (high broad band diffraction efficiency, high resolution through use of higher diffraction orders) such as the ones on XMM-Newton. Extensive instrument and system configuration studies have shown that a CAT grating-based spectrometer is an outstanding instrument capable of delivering resolving power on the order of 5,000 and high effective area, even with a telescope point-spread function on the order of many arc-seconds. We have fabricated freestanding, ultra-high aspect-ratio CAT grating bars from silicon-on-insulator wafers using both wet and dry etch processes. The 200 nm-period grating bars are supported by an integrated Level 1 support mesh, and a coarser external Level 2 support mesh. The resulting grating membrane is mounted to a frame, resulting in a grating facet. Many such facets comprise a grating array that provides light-weight coverage of large-area telescope apertures. Here we present fabrication results on the integration of CAT gratings and the different high-throughput support mesh levels and on membrane-frame bonding. We also summarize recent x-ray data analysis of 3 and 6 micron deep wet-etched CAT grating prototypes.

Holographic recording of surface relief gratings in stilbene azobenzene derivatives at 633 nm

International Nuclear Information System (INIS)

Ozols, A; Saharov, D; Kokars, V; Kampars, V; Maleckis, A; Mezinskis, G; Pludons, A

2010-01-01

Holographic recording in stilbene azobenzene derivatives by He-Ne 633 nm laser light has been experimentally studied. It was found that surface relief gratings (SRG) can be recorded by red light. Usually shorter wavelengths are used to induce the trans-cis photo-isomerization in organic materials. SRG with 2 μm period and an amplitude of 130 nm have been recorded with 0.88 W/cm 2 light in about 20 minutes in amorphous films of 3-(4-(bis(2-(trityloxy)ethyl)amino)phenyl)-2-(4-(2-bromo-4-nitrophenyl) diazenyl)phenyl)acrylonitrile spin-coated on glass substrates. Self-diffraction efficiency up to 17.4% and specific recording energy down to 114 J/(cm 2 %) were measured. The recorded SRG were stable as proved by subsequent AFM measurements. The photo-induced changes in absorption spectra did not reveal noticeable signs of trans-cis transformations. Rather, spectrally uniform bleaching of the films took place. We conclude that a photothermally stimulated photo-destruction of chromophores is responsible for the SRG recording. The recording of stable SRG in the stilbene azobenzene derivatives we studied is accompanied by the recording of relaxing volume-phase gratings due to the photo-orientation of chromophores by the linearly polarized recording light. It should also be noted that holographic recording efficiency in stilbene azobenzene derivatives exhibit an unusual non-monotonic sample storage-time dependence presumably caused by the peculiarities of structural relaxation of the films.

Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M

1993-06-01

The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

Transmission comb of a distributed Bragg reflector with two surface dielectric gratings

KAUST Repository

Zhao, Xiaobo

2016-02-19

The transmission behaviour of a distributed Bragg reector (DBR) with surface dielectric gratings on top and bottom is studied. The transmission shows a comb-like spectrum in the DBR band gap, which is explained in the Fano picture. The number density of the transmission peaks increases with increasing number of cells of the DBR, while the ratio of the average full width at half maximum to the corresponding average free spectral range, being only few percent for both transversal electric and magnetic waves, is almost invariant. The transmission peaks can be narrower than 0.1 nm and are fully separated from each other in certain wavebands. We further prove that the transmission combs are robust against randomness in the heights of the DBR layers. Therefore, the proposed structure is a candidate for an ultra-narrow-band multichannel filter or polarizer.

Water Vapor Sensors Based on the Swelling of Relief Gelatin Gratings

Directory of Open Access Journals (Sweden)

Sergio Calixto

2015-01-01

Full Text Available We report on a novel device to measure relative humidity. The sensor is based on surface diffraction gratings made of gelatin. This material swells and shrinks according to the content of water vapor in air. By sending a light beam to the grating, diffracted orders appear. Due to the gelatin swelling or shrinking, first order intensity changes according to the relative humidity. Calibration curves relating intensity versus relative humidity have been found. The fabrication process of diffraction gratings and the testing of the prototype sensing devices are described.

Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

Science.gov (United States)

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

A Single-Element Plane Grating Monochromator

Directory of Open Access Journals (Sweden)

Michael C. Hettrick

2016-01-01

Full Text Available Concerted rotations of a self-focused varied line-space diffraction grating about its groove axis and surface normal define a new geometric class of monochromator. Defocusing is canceled, while the scanned wavelength is reinforced at fixed conjugate distances and horizontal deviation angle. This enables high spectral resolution over a wide band, and is of particular advantage at grazing reflection angles. A new, rigorous light-path formulation employs non-paraxial reference points to isolate the lateral ray aberrations, with those of power-sum ≤ 3 explicitly expanded for a plane grating. Each of these 14 Fermat equations agrees precisely with the value extracted from numerical raytrace simulations. An example soft X-ray design (6° deviation angle and 2 × 4 mrad aperture attains a resolving power > 25 , 000 over a three octave scan range. The proposed rotation scheme is not limited to plane surfaces or monochromators, providing a new degree of freedom in optical design.

Atomic and electronic structures of novel silicon surface structures

Energy Technology Data Exchange (ETDEWEB)

Terry, J.H. Jr.

1997-03-01

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

Feasibility evaluation of a neutron grating interferometer with an analyzer grating based on a structured scintillator

Science.gov (United States)

Kim, Youngju; Kim, Jongyul; Kim, Daeseung; Hussey, Daniel. S.; Lee, Seung Wook

2018-03-01

We introduce an analyzer grating based on a structured scintillator fabricated by a gadolinium oxysulfide powder filling method for a symmetric Talbot-Lau neutron grating interferometer. This is an alternative way to analyze the Talbot self-image of a grating interferometer without using an absorption grating to block neutrons. Since the structured scintillator analyzer grating itself generates the signal for neutron detection, we do not need an additional scintillator screen as an absorption analyzer grating. We have developed and tested an analyzer grating based on a structured scintillator in our symmetric Talbot-Lau neutron grating interferometer to produce high fidelity absorption, differential phase, and dark-field contrast images. The acquired images have been compared to results of a grating interferometer utilizing a typical absorption analyzer grating with two commercial scintillation screens. The analyzer grating based on the structured scintillator enhances interference fringe visibility and shows a great potential for economical fabrication, compact system design, and so on. We report the performance of the analyzer grating based on a structured scintillator and evaluate its feasibility for the neutron grating interferometer.

Fiber Optic Bragg Gratings

National Research Council Canada - National Science Library

Battiato, James

1998-01-01

Coupled mode theory was used to model reflection fiber gratings. The effects of experimental parameters on grating characteristics were modeled for both uniform and non-uniform grating profiles using this approach...

Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers

Science.gov (United States)

Brox, O.; Wenzel, H.; Della Case, P.; Tawfieq, M.; Sumpf, B.; Weyers, M.; Knigge, A.

2018-02-01

Widely-tunable lasers without moving parts are attractive light sources for sensors in industry and biomedicine. In contrast to InP based sampled grating (SG) distributed Bragg reflector (DBR) diode lasers which are commercially available, shorter wavelength GaAs SG-DBR lasers are still under development. One reason is the difficulty to integrate gratings with coupling coefficients that are high enough for functional grating bursts with lengths below 10 μm. Recently we have demonstrated > 20 nm wide quasi-continuous tuning with a GaAs based SG-DBR laser emitting around 975 nm. Wavelength selective reflectors are realized with SGs having different burst periods for the front and back mirrors. Thermal tuning elements (resistors) which are placed on top of the SG allow the control of the spectral positions of the SG reflector combs and hence to adjust the Vernier mode. In this work we characterize subsections of the developed SG-DBR laser to further improve its performance. We study the impact of two different vertical structures (with vertical far field FWHMs of 41° and 24°) and two grating orders on the coupling coefficient. Gratings with coupling coefficients above 350 cm-1 have been integrated into SG-DBR lasers. We also examine electronic tuning elements (a technique which is typically applied in InP based SG-DBR lasers and allows tuning within nanoseconds) and discuss the limitations in the GaAs material system

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Influence of semiconductor surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts

Energy Technology Data Exchange (ETDEWEB)

Mirowska, Nella [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)]. E-mail: nella.mirowska@pwr.wroc.pl; Misiewicz, Jan [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2006-06-15

The Schottky barriers formed by Al on Zn{sub 3}P{sub 2} p-type crystals have been studied. Three types of crystals (monocrystal, large-grain crystal and polycrystal) were used for device fabrication. The samples were separated in two groups according to the type of structure and the methods of surface preparation. The samples from the first group were different in structure (monocrystal, large-grain crystal and polycrystals) but prepared in the same way. Three polycrystals with differently prepared surfaces were collected in the second group. Two samples from this group were also annealed in open air at 523 K for 24 h. Measurements of photovoltaic effect at room temperature were carried out to test the impact of surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts. Substantial differences in shape and intensity of PV signal were observed depending on whether the surface of semiconductor was mechanically polished, chemically etched or/and heat treated. The height of potential barrier, {phi} {sub B}, and optical transitions in semiconductor were determined. The value of {phi} {sub B} changed from 0.747 to 0.767 eV for unheated samples and from 0.724 to 0.755 eV for the heated ones. The quality of semiconductor surface seems to have an essential influence on spectral characteristics of Al-Zn{sub 3}P{sub 2} junctions, especially in the case of polycrystals. It appeared that thorough preliminary mechanical polishing of crystals surface provides quite good photoelectric properties of Al-Zn{sub 3}P{sub 2} junctions.

Optical power-based interrogation of plasmonic tilted fiber Bragg grating biosensors

Science.gov (United States)

González-Vila, Á.; Lopez-Aldaba, A.; Kinet, D.; Mégret, P.; Lopez-Amo, M.; Caucheteur, C.

2017-04-01

Two interrogation techniques for plasmonic tilted fiber Bragg grating sensors are reported and experimentally tested. Typical interrogation methods are usually based on tracking the wavelength shift of the most sensitive cladding mode, but for biosensing applications, spectrometer-based methods can be replaced by more efficient solutions. The proposed techniques thus rely on the measurement of the induced changes in optical power. The first one consists of a properly polarized tunable laser source set to emit at the wavelength of the sensor most sensitive mode and an optical power meter to measure the transmitted response. For the second method, a uniform fiber Bragg grating is photo-inscribed beyond the sensor in such a way that its central wavelength matches the sensor most sensitive mode, acting as an optical filter. Using a LED source, light reflected backwards by this grating is partially attenuated when passing through the sensor due to plasmon wave excitation and the power changes are quantified once again with an optical power meter. A performance analysis of the techniques is carried out and they both result competitive interrogation solutions. The work thus focuses on the development of cost-effective alternatives for monitoring this kind of biosensors in practical situations.

Grating array systems having a plurality of gratings operative in a coherently additive mode and methods for making such grating array systems

Science.gov (United States)

Kessler, Terrance J [Mendon, NY; Bunkenburg, Joachim [Victor, NY; Huang, Hu [Pittsford, NY

2007-02-13

A plurality of gratings (G1, G2) are arranged together with a wavefront sensor, actuators, and feedback system to align the gratings in such a manner, that they operate like a single, large, monolithic grating. Sub-wavelength-scale movements in the mechanical mounting, due to environmental influences, are monitored by an interferometer (28), and compensated by precision actuators (16, 18, 20) that maintain the coherently additive mode. The actuators define the grating plane, and are positioned in response to the wavefronts from the gratings and a reference flat, thus producing the interferogram that contains the alignment information. Movement of the actuators is also in response to a diffraction-limited spot on the CCD (36) to which light diffracted from the gratings is focused. The actuator geometry is implemented to take advantage of the compensating nature of the degrees of freedom between gratings, reducing the number of necessary control variables.

Study of gain-coupled distributed feedback laser based on high order surface gain-coupled gratings

Science.gov (United States)

Gao, Feng; Qin, Li; Chen, Yongyi; Jia, Peng; Chen, Chao; Cheng, LiWen; Chen, Hong; Liang, Lei; Zeng, Yugang; Zhang, Xing; Wu, Hao; Ning, Yongqiang; Wang, Lijun

2018-03-01

Single-longitudinal-mode, gain-coupled distributed feedback (DFB) lasers based on high order surface gain-coupled gratings are achieved. Periodic surface metal p-contacts with insulated grooves realize gain-coupled mechanism. To enhance gain contrast in the quantum wells without the introduction of effective index-coupled effect, groove length and depth were well designed. Our devices provided a single longitudinal mode with the maximum CW output power up to 48.8 mW/facet at 971.31 nm at 250 mA without facet coating, 3dB linewidth (39 dB). Optical bistable characteristic was observed with a threshold current difference. Experimentally, devices with different cavity lengths were contrasted on power-current and spectrum characteristics. Due to easy fabrication technique and stable performance, it provides a method of fabricating practical gain-coupled distributed feedback lasers for commercial applications.

Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

Science.gov (United States)

Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

2013-12-02

We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

Nano-imprint gold grating as refractive index sensor

International Nuclear Information System (INIS)

Kumari, Sudha; Mohapatra, Saswat; Moirangthem, Rakesh S.

2016-01-01

Large scale of fabrication of plasmonic nanostructures has been a challenging task due to time consuming process and requirement of expensive nanofabrication tools such as electron beam lithography system, focused ion beam system, and extreme UV photolithography system. Here, we present a cost-effective fabrication technique so called soft nanoimprinting to fabricate nanostructures on the larger sample area. In our fabrication process, a commercially available optical DVD disc was used as a template which was imprinted on a polymer glass substrate to prepare 1D polymer nano-grating. A homemade nanoimprinting setup was used in this fabrication process. Further, a label-free refractive index sensor was developed by utilizing the properties of surface plasmon resonance (SPR) of a gold coated 1D polymer nano-grating. Refractive index sensing was tested by exposing different solutions of glycerol-water mixture on the surface of gold nano-grating. The calculated bulk refractive index sensitivity was found to be 751nm/RIU. We believed that our proposed SPR sensor could be a promising candidate for developing low-cost refractive index sensor with high sensitivity on a large scale.

Control of fibre laser mode-locking by narrow-band Bragg gratings

International Nuclear Information System (INIS)

Laegsgaard, J

2008-01-01

The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

Efficient semiconductor multicycle terahertz pulse source

Science.gov (United States)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

Science.gov (United States)

Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

2018-02-23

Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Settens, Charles M. [State Univ. of New York (SUNY), Albany, NY (United States)

2015-01-01

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

KAUST Repository

Pu, Jiang

2017-04-18

The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

Science.gov (United States)

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Stop grating for perfect replication of micro Fresnel lens by thermal imprinting

International Nuclear Information System (INIS)

Gao, Yulong; Lin, Jie; Jin, Peng; Tan, Jiubin; Davies, Graham; Prewett, Philip D

2012-01-01

A stop grating concept is proposed to improve polymer filling in the thermal imprinting of a micro Fresnel lens structure. The stop grating consists of line and space structures outside the Fresnel lens pattern zone area. The experimental results have proved that the stop grating can help to achieve the complete filling of a mold, at the same time acting as a stop to prevent possible damage to the mold surface relief structures during imprinting press. A computer simulation was carried out to identify the phenomena of micro-holes at the edge of imprinted pattern. By removing the cavity between the pattern area and stop grating, perfect imprinting results have been achieved. (paper)

Large area UV light source with a semiconductor cathode

International Nuclear Information System (INIS)

Salamov, B. G.; Ciftci, Y. Oe.; Colakoglu, K.

2002-01-01

The light emission (LE) in the UV and visible (blue) range generated by a planar gas discharge system (PGDS) with a semiconductor cathode (SC) are studied. New light source offer high-intensity narrow-band emission at various UV and visible wavelengths (330 - 440 nm). Spectra in N 2 is presented, as well as intensity vs pressure curves for the main peaks of the spectrum. The use of source offers several advantages: PGDS can be extremely efficient energy converters transforming and amplifying a relatively low-powered photon flux incident on the receiving surface of the SC into a flux of high-energy particles over extended areas, i.e. electron, ions, photons. Thus, extremely bright UV and visible sources can be built. LE characteristics of the space in the PGDS are complex, depending on the emitting medium and species. By using the IR light to excite the SC of the system, we have shown that the discharge light emission (DLE) of the device with the N 2 in the gap can serve as an efficient source of the UV radiation if gas pressure and electric field are sufficiently high. This is realized due to the effect of the stabilisation of the spatially homogeneous mode of the discharge in a narrow gap with a large emitting area of SC. Special features of DLE render it highly promising for the development of sources with a large area of the emitting surface, high spatial uniformity of UV radiation, and fast dynamics of these devices. This low cost, high power light sources can provide an interesting alternative to conventional UV lamps

Estimating the Infrared Radiation Wavelength Emitted by a Remote Control Device Using a Digital Camera

Science.gov (United States)

Catelli, Francisco; Giovannini, Odilon; Bolzan, Vicente Dall Agnol

2011-01-01

The interference fringes produced by a diffraction grating illuminated with radiation from a TV remote control and a red laser beam are, simultaneously, captured by a digital camera. Based on an image with two interference patterns, an estimate of the infrared radiation wavelength emitted by a TV remote control is made. (Contains 4 figures.)

Ellipsoidal diffraction grating as output coupler for quasi-optical gyrotrons

International Nuclear Information System (INIS)

Hogge, J.P.; Cao, H.; Tran, T.M.; Tran, M.Q.; Paris, P.J.; Kasparek, W.

1991-01-01

The use of a diffraction grating arranged in the -1 Littrow mount as an output coupler for a quasi-optical Fabry-Perot resonator at microwave frequencies (100 GHz) was suggested in 1990. A planar grating with curvilinear grooves (in order to match the Littrow condition everywhere on the surface for a given Gaussian beam) gives a power coupling efficiency of 85% which is limited by the depolarization but gave approximately the same global efficiency because of distortion. We report low power tests on an improvement of the second scheme, based on curved grooves on an ellipsoidal surface, which gives a global efficiency of 94%. (author) 3 figs., 3 refs

A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

International Nuclear Information System (INIS)

Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

2013-01-01

The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

Decoherence in semiconductor cavity QED systems due to phonon couplings

DEFF Research Database (Denmark)

Nielsen, Per Kær; Mørk, Jesper

2014-01-01

We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

International Nuclear Information System (INIS)

Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

1999-01-01

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

Optically coupled semiconductor device

Energy Technology Data Exchange (ETDEWEB)

Kumagaya, Naoki

1988-11-18

This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

Science.gov (United States)

Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

2015-02-04

In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

Electro-optic diffraction grating tuned laser

International Nuclear Information System (INIS)

Hughes, R.S.

1975-01-01

An electro-optic diffraction grating tuned laser comprising a laser medium, output mirror, retro-reflective grating and an electro-optic diffraction grating beam deflector positioned between the laser medium and the reflective diffraction grating is described. An optional angle multiplier may be used between the electro-optic diffraction grating and the reflective grating. (auth)

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

NARCIS (Netherlands)

Gong, Q.; Nötzel, R.; Schönherr, H.-P.; Ploog, K.H.

2002-01-01

We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high

Plasmonic Optical Fiber-Grating Immunosensing: A Review.

Science.gov (United States)

Guo, Tuan; González-Vila, Álvaro; Loyez, Médéric; Caucheteur, Christophe

2017-11-26

Plasmonic immunosensors are usually made of a noble metal (in the form of a film or nanoparticles) on which bioreceptors are grafted to sense analytes based on the antibody/antigen or other affinity mechanism. Optical fiber configurations are a miniaturized counterpart to the bulky Kretschmann prism and allow easy light injection and remote operation. To excite a surface plasmon (SP), the core-guided light is locally outcoupled. Unclad optical fibers were the first configurations reported to this end. Among the different architectures able to bring light in contact with the surrounding medium, a great quantity of research is today being conducted on metal-coated fiber gratings photo-imprinted in the fiber core, as they provide modal features that enable SP generation at any wavelength, especially in the telecommunication window. They are perfectly suited for use with cost-effective high-resolution interrogators, allowing both a high sensitivity and a low limit of detection to be reached in immunosensing. This paper will review recent progress made in this field with different kinds of gratings: uniform, tilted and eccentric short-period gratings as well as long-period fiber gratings. Practical cases will be reported, showing that such sensors can be used in very small volumes of analytes and even possibly applied to in vivo diagnosis.

Plasmonic Optical Fiber-Grating Immunosensing: A Review

Directory of Open Access Journals (Sweden)

Tuan Guo

2017-11-01

Full Text Available Plasmonic immunosensors are usually made of a noble metal (in the form of a film or nanoparticles on which bioreceptors are grafted to sense analytes based on the antibody/antigen or other affinity mechanism. Optical fiber configurations are a miniaturized counterpart to the bulky Kretschmann prism and allow easy light injection and remote operation. To excite a surface plasmon (SP, the core-guided light is locally outcoupled. Unclad optical fibers were the first configurations reported to this end. Among the different architectures able to bring light in contact with the surrounding medium, a great quantity of research is today being conducted on metal-coated fiber gratings photo-imprinted in the fiber core, as they provide modal features that enable SP generation at any wavelength, especially in the telecommunication window. They are perfectly suited for use with cost-effective high-resolution interrogators, allowing both a high sensitivity and a low limit of detection to be reached in immunosensing. This paper will review recent progress made in this field with different kinds of gratings: uniform, tilted and eccentric short-period gratings as well as long-period fiber gratings. Practical cases will be reported, showing that such sensors can be used in very small volumes of analytes and even possibly applied to in vivo diagnosis.

Test surfaces useful for calibration of surface profilometers

Science.gov (United States)

Yashchuk, Valeriy V; McKinney, Wayne R; Takacs, Peter Z

2013-12-31

The present invention provides for test surfaces and methods for calibration of surface profilometers, including interferometric and atomic force microscopes. Calibration is performed using a specially designed test surface, or the Binary Pseudo-random (BPR) grating (array). Utilizing the BPR grating (array) to measure the power spectral density (PSD) spectrum, the profilometer is calibrated by determining the instrumental modulation transfer.

Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes

International Nuclear Information System (INIS)

Haldar, Arpita; Bera, Susanta; Jana, Sunirmal; Bhattacharya, Kallol; Chakraborty, Rajib

2014-01-01

Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (∼8 nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs

Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2009-01-01

We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

Science.gov (United States)

Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

2012-08-01

Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Science.gov (United States)

Gorai, Prashun; Seebauer, Edmund G.

2014-07-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

International Nuclear Information System (INIS)

Gorai, Prashun; Seebauer, Edmund G.

2014-01-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Measurement of chloride-ion concentration with long-period grating technology

Science.gov (United States)

Tang, Jaw-Luen; Wang, Jian-Neng

2007-06-01

A simple and low-cost long-period fiber grating (LPG) sensor suited for chloride-ion concentration measurement is presented. The LPG sensor is found to be sensitive to the refractive index of the medium around the cladding surface of the sensing grating, thus offering the prospect of development of practical sensors such as an ambient index sensor or a chemical concentration indicator with high stability and reliability. We measured chloride ions in a typical concrete sample immersed in salt water solutions with different weight concentrations ranging from 0% to 25%. Results show that the LPG sensor exhibited a linear decrease in the transmission loss and resonance wavelength shift when the concentration increased. The measurement accuracy for the concentration of salt in water solution is estimated to be 0.6% and the limit of detection for chloride ions is about 0.04%. To further enhance its sensitivity for chloride concentrations, we coated a monolayer of colloidal gold nanoparticles as the active material on the grating surface of the LPG sensor. The operating principle of sensing is based on the sensitivity of localized surface plasmon resonance of self-assembled gold colloids on the grating section of the LPG. With this method, a factor of two increase in the sensitivity of detecting chemical solution concentrations was obtained. The advantages of this type of fiber-optic sensor are that it is compact, relatively simple to construct and easy to use. Moreover, the sensor has the potential capability for on-site, in vivo and remote sensing, and it has potential use as a disposable sensor.

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

High-accuracy measurement and compensation of grating line-density error in a tiled-grating compressor

Science.gov (United States)

Zhao, Dan; Wang, Xiao; Mu, Jie; Li, Zhilin; Zuo, Yanlei; Zhou, Song; Zhou, Kainan; Zeng, Xiaoming; Su, Jingqin; Zhu, Qihua

2017-02-01

The grating tiling technology is one of the most effective means to increase the aperture of the gratings. The line-density error (LDE) between sub-gratings will degrade the performance of the tiling gratings, high accuracy measurement and compensation of the LDE are of significance to improve the output pulses characteristics of the tiled-grating compressor. In this paper, the influence of LDE on the output pulses of the tiled-grating compressor is quantitatively analyzed by means of numerical simulation, the output beams drift and output pulses broadening resulting from the LDE are presented. Based on the numerical results we propose a compensation method to reduce the degradations of the tiled grating compressor by applying angular tilt error and longitudinal piston error at the same time. Moreover, a monitoring system is setup to measure the LDE between sub-gratings accurately and the dispersion variation due to the LDE is also demonstrated based on spatial-spectral interference. In this way, we can realize high-accuracy measurement and compensation of the LDE, and this would provide an efficient way to guide the adjustment of the tiling gratings.

FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells

Science.gov (United States)

Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.

2018-01-01

Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.

Infrared spectroscopic ellipsometry of micrometer-sized SiO2 line gratings

Science.gov (United States)

Walder, Cordula; Zellmeier, Matthias; Rappich, Jörg; Ketelsen, Helge; Hinrichs, Karsten

2017-09-01

For the design and process control of periodic nano-structured surfaces spectroscopic ellipsometry is already established in the UV-VIS spectral regime. The objective of this work is to show the feasibility of spectroscopic ellipsometry in the infrared, exemplarily, on micrometer-sized SiO2 line gratings grown on silicon wafers. The grating period ranges from 10 to about 34 μm. The IR-ellipsometric spectra of the gratings exhibit complex changes with structure variations. Especially in the spectral range of the oxide stretching modes, the presence of a Rayleigh singularity can lead to pronounced changes of the spectrum with the sample geometry. The IR-ellipsometric spectra of the gratings are well reproducible by calculations with the RCWA method (Rigorous Coupled Wave Analysis). Therefore, infrared spectroscopic ellipsometry allows the quantitative characterization and process control of micrometer-sized structures.

Injection and detection of a spin-polarized current in a light-emitting diode

Science.gov (United States)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal

2016-10-06

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

2016-01-01

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Energy Technology Data Exchange (ETDEWEB)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2014-11-03

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe Microcopies

Science.gov (United States)

Wilkins, R.; Powell, Kirk St. A.

1997-01-01

Ilmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

The optical constants of the organic thin films in the case of xanthats adsorption at the surface of semiconductors minerals

International Nuclear Information System (INIS)

Todoran, Radu; Todoran, Daniela

2008-01-01

The paper present the determinations of some kinetic parameters that characterize the kinetics of the adsorption phenomenon of some organic xanthate molecule on the surface of some natural semiconductor mineral (galena, sphalerite) in order to understand the inward mechanism of this phenomenon. Among the methods of inquiry that allow kinetics determination in situ the optical ones were chosen relying on the change of the liquid-mineral semiconductor interface, and permitting continuous inquires without disturbing the inward development of the processes. Into the computation, we took into the consideration the physical values which feature the roughness of the solid surface, the diffusion into liquid media and the energetic non-homogeneities of the surface. The R s /R p =f(θ) characteristic helps us to establish the thickness of the adsorbed layer, as well as to determine the optical parameters of the thin film. the experimental results allow us to get some information on the mineral and mineral-solution of xanthate, as well allow us to get some information on the parameters which, in correlation with other proportions experimentally determined - could had as to estimations of the dynamic of the surface of a semiconductor solid body. (Author)

Polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating

Science.gov (United States)

Hohne, Andrew J.; Moon, Benjamin; Baumbauer, Carol L.; Gray, Tristan; Dilts, James; Shaw, Joseph A.; Dickensheets, David L.; Nakagawa, Wataru

2017-08-01

We present the design, fabrication, and characterization of a polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating for use in polarimetric imaging. Gold nanowires were deposited via physical vapor deposition (PVD) onto a silicon surface relief grating that was patterned using electron beam lithography (EBL) and fabricated using standard silicon processing techniques. Optical characterization with a broad-spectrum tungsten halogen light source and a grating spectrometer showed normalized peak TM transmission of 53% with a full-width at half-maximum (FWHM) of 122 nm, which was consistent with rigorous coupled-wave analysis (RCWA) simulations. Simulation results suggested that device operation relied on suppression of the TM transmission caused by surface plasmon polariton (SPP) excitation at the gold-silicon interface and an increase in TM transmission caused by a Fabry-Perot (FP) resonance in the cavity between the gratings. TE rejection occurred at the initial air/gold interface. We also present simulation results of an improved design based on a two-dielectric grating where two different SPP resonances allowed us to improve the shape of the passband by suppressing the side lobes. This newer design resulted in improved side-band performance and increased peak TM transmission.

Hybrid anode for semiconductor radiation detectors

Science.gov (United States)

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Light emitting device having peripheral emissive region

Science.gov (United States)

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Feasibility of Fiber Bragg Grating and Long-Period Fiber Grating Sensors under Different Environmental Conditions

Directory of Open Access Journals (Sweden)

Jian-Neng Wang

2010-11-01

Full Text Available This paper presents the feasibility of utilizing fiber Bragg grating (FBG and long-period fiber grating (LPFG sensors for nondestructive evaluation (NDE of infrastructures using Portland cement concretes and asphalt mixtures for temperature, strain, and liquid-level monitoring. The use of hybrid FBG and LPFG sensors is aimed at utilizing the advantages of two kinds of fiber grating to implement NDE for monitoring strains or displacements, temperatures, and water-levels of infrastructures such as bridges, pavements, or reservoirs for under different environmental conditions. Temperature fluctuation and stability tests were examined using FBG and LPFG sensors bonded on the surface of asphalt and concrete specimens. Random walk coefficient (RWC and bias stability (BS were used for the first time to indicate the stability performance of fiber grating sensors. The random walk coefficients of temperature variations between FBG (or LPFG sensor and a thermocouple were found in the range of −0.7499 °C/ to −1.3548 °C/. In addition, the bias stability for temperature variations, during the fluctuation and stability tests with FBG (or LPFG sensors were within the range of 0.01 °C/h with a 15–18 h time cluster to 0.09 °C/h with a 3–4 h time cluster. This shows that the performance of FBG or LPFG sensors is comparable with that of conventional high-resolution thermocouple sensors under rugged conditions. The strain measurement for infrastructure materials was conducted using a packaged FBG sensor bonded on the surface of an asphalt specimen under indirect tensile loading conditions. A finite element modeling (FEM was applied to compare experimental results of indirect tensile FBG strain measurements. For a comparative analysis between experiment and simulation, the FEM numerical results agreed with those from FBG strain measurements. The results of the liquid-level sensing tests show the LPFG-based sensor could discriminate five stationary liquid

Nanopatterned organic semiconductors for visible light communications

Science.gov (United States)

Yang, Xilu; Dong, Yurong; Zeng, Pan; Yu, Yan; Xie, Yujun; Gong, Junyi; Shi, Meng; Liang, Rongqing; Ou, Qiongrong; Chi, Nan; Zhang, Shuyu

2018-03-01

Visible light communication (VLC) is becoming an important and promising supplement to the existing Wi-Fi network for the coming 5G communications. Organic light-emitting semiconductors present much fast fluorescent decay rates compared to those of conventional colour-converting phosphors, therefore capable of achieving much higher bandwidths. Here we explore how nanopatterned organic semiconductors can further enhance the data rates of VLC links by improving bandwidths and signal-to-noise ratios (SNRs) and by supporting spatial multiplexing. We first demonstrate a colour-converting VLC system based on nanopatterned hyperbolic metamaterials (HMM), the bandwidth of which is enhanced by 50%. With regard to enhancing SNRs, we achieve a tripling of optical gain by integrating a nanopatterned luminescent concentrator to a signal receiver. In addition, we demonstrate highly directional fluorescent VLC antennas based on nanoimprinted polymer films, paving the way to achieving parallel VLC communications via spatialmultiplexing. These results indicate nanopatterned organic semiconductors provide a promising route to high speed VLC links.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Science.gov (United States)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

International Nuclear Information System (INIS)

Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

2003-01-01

We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Fiber Optic Long Period Grating Based Sensor for Coconut Oil Adulteration Detection

Directory of Open Access Journals (Sweden)

T. M. Libish

2010-03-01

Full Text Available We report the development and demonstration of a Long-Period Grating (LPG based optical fiber sensor for determining the adulteration of coconut oil by palm oil. The fundamental principle of detection is the sensitive dependence of the resonance peaks of LPG on the changes of the refractive index of the environmental medium around the cladding surface of the grating. Refractive index sensing with LPGs employs light coupling between core and cladding modes in the grating section. The transmittance spectra of a long period grating element immersed in different mixtures of coconut oil and palm oil were recorded. Results show that resonance wavelengths and transmission intensities varied as a function of the adulteration level of coconut oil. Detection limit of adulteration was found to be 2 % for coconut oil–palm oil binary mixture.

Applications of laser-induced gratings to spectroscopy and dynamics

Energy Technology Data Exchange (ETDEWEB)

Rohlfing, E.A. [Sandia National Laboratories, Livermore, CA (United States)

1993-12-01

This program has traditionally emphasized two principal areas of research. The first is the spectroscopic characterization of large-amplitude motion on the ground-state potential surface of small, transient molecules. The second is the reactivity of carbonaceous clusters and its relevance to soot and fullerene formation in combustion. Motivated initially by the desire to find improved methods of obtaining stimulated emission pumping (SEP) spectra of transients, most of our recent work has centered on the use of laser-induced gratings or resonant four-wave mixing in free-jet expansions. These techniques show great promise for several chemical applications, including molecular spectroscopy and photodissociation dynamics. The author describes recent applications of two-color laser-induced grating spectroscopy (LIGS) to obtain background-free SEP spectra of transients and double resonance spectra of nonfluorescing species, and the use of photofragment transient gratings to probe photodissociation dynamics.

Investigation on the special Smith-Purcell radiation from a nano-scale rectangular metallic grating

International Nuclear Information System (INIS)

Li, Weiwei; Liu, Weihao; Jia, Qika

2016-01-01

The special Smith-Purcell radiation (S-SPR), which is from the radiating eigen modes of a grating, has remarkable higher intensity than the ordinary Smith-Purcell radiation. Yet in previous studies, the gratings were treated as perfect conductor without considering the surface plasmon polaritons (SPPs) which are of significance for the nano-scale gratings especially in the optical region. In present paper, the rigorous theoretical investigations on the S-SPR from a nano-grating with SPPs taken into consideration are carried out. The dispersion relations and radiation characteristics are obtained, and the results are verified by simulations. According to the analyses, the tunable light radiation can be achieved by the S-SPR from a nano-grating, which offers a new prospect for developing the nano-scale light sources.

A directly cooled grating substrate for ALS [Advanced Light Source] undulator beam lines

International Nuclear Information System (INIS)

DiGennaro, R.; Swain, T.

1989-08-01

Design analyses using finite element methods are presented for thermal distortion of water-cooled diffraction grating substrates for a potential application at the LBL Advanced Light Source, demonstrating that refinements in cooling channel configuration and heat flux distribution can significantly reduce optical surface distortion with high heat loads. Using an existing grating substrate design, sensitivity of tangential slope errors due to thermal distortion is evaluated for a variety of thermal boundary conditions, including coolant flow rate and heat transfer film coefficients, surface illumination area and heat distribution profile, and location of the convection cooling surfaces adjacent to the heated region. 1 ref., 5 figs., 2 tabs

Colour tuneable light-emitting transistor

Energy Technology Data Exchange (ETDEWEB)

Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2010-07-01

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

Super long viewing distance light homogeneous emitting three-dimensional display

Science.gov (United States)

Liao, Hongen

2015-04-01

Three-dimensional (3D) display technology has continuously been attracting public attention with the progress in today's 3D television and mature display technologies. The primary characteristics of conventional glasses-free autostereoscopic displays, such as spatial resolution, image depths, and viewing angle, are often limited due to the use of optical lenses or optical gratings. We present a 3D display using MEMS-scanning-mechanism-based light homogeneous emitting (LHE) approach and demonstrate that the display can directly generate an autostereoscopic 3D image without the need for optical lenses or gratings. The generated 3D image has the advantages of non-aberration and a high-definition spatial resolution, making it the first to exhibit animated 3D images with image depth of six meters. Our LHE 3D display approach can be used to generate a natural flat-panel 3D display with super long viewing distance and alternative real-time image update.

Semiconductor plasmonic crystals : active control of THz extinction

NARCIS (Netherlands)

Schaafsma, M.C.; Gomez Rivas, J.

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

Directory of Open Access Journals (Sweden)

Nataliya V. Finogenova

2003-12-01

Full Text Available In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS, which allowed evaluating heterogeneous death-rate of ozone (γ Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb.

Low crosstalk Arrayed Waveguide Grating with Cascaded Waveguide Grating Filter

International Nuclear Information System (INIS)

Deng Yang; Liu Yuan; Gao Dingshan

2011-01-01

We propose a highly compact and low crosstalk arrayed waveguide grating (AWG) with cascaded waveguide grating (CWGF). The side lobes of the silicon nanowire AWG, which are normally introduced by fabrication errors, can be effectively suppressed by the CWGF. And the crosstalk can be improved about 15dB.

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

Science.gov (United States)

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimal wavelength scale diffraction gratings for light trapping in solar cells

International Nuclear Information System (INIS)

Chong, Teck Kong; Wilson, Jonathan; Mokkapati, Sudha; Catchpole, Kylie R

2012-01-01

Dielectric gratings are a promising method of achieving light trapping for thin crystalline silicon solar cells. In this paper, we systematically examine the potential performance of thin silicon solar cells with either silicon (Si) or titanium dioxide (TiO 2 ) gratings using numerical simulations. The square pyramid structure with silicon nitride coating provides the best light trapping among all the symmetric structures investigated, with 89% of the expected short circuit current density of the Lambertian case. For structures where the grating is at the rear of the cell, we show that the light trapping provided by the square pyramid and the checkerboard structure is almost identical. Introducing asymmetry into the grating structures can further improve their light trapping properties. An optimized Si skewed pyramid grating on the front surface of the solar cell results in a maximum short circuit current density, J sc , of 33.4 mA cm −2 , which is 91% of the J sc expected from an ideal Lambertian scatterer. An optimized Si skewed pyramid grating on the rear performs as well as a rear Lambertian scatterer and an optimized TiO 2 grating on the rear results in 84% of the J sc expected from an optimized Si grating. The results show that submicron symmetric and skewed pyramids of Si or TiO 2 are a highly effective way of achieving light trapping in thin film solar cells. TiO 2 structures would have the additional advantage of not increasing recombination within the cell. (paper)

An ultra-high-vacuum multiple grating chamber and scan drive with improved grating change

International Nuclear Information System (INIS)

Hulbert, S.L.; Holly, D.J.; Middleton, F.H.; Wallace, D.J.; Wisconsin Univ., Stoughton, WI; Wisconsin Univ., Stoughton, WI

1989-01-01

We describe a new grating chamber and scan drive which has been designed, built, and tested by Physical Sciences Laboratory of the University of Wisconsin for the new high flux, high-resolution spectroscopy branch line of the TOK hybrid wiggler/undulator on the NSLS VUV ring. The chamber will contain spherical gratings to be used in the Spherical Grating Monochromator (SGM) configuration introduced by Chen and Sette. The grating chamber houses five 180 mm x 35 mm x 30 mm gratings capable of scanning a range of 12 degree (-14 degree to +8 degree with respect to the incoming beam direction) for VUV and soft X-ray diffraction. The gratings can be switched and precisely indexed while under ultra-high vacuum (UHV) at any scan angle and are mechanically isolated from the vacuum chamber to prevent inaccuracies due to chamber distortions. The gratings can separately be adjusted for height, yaw, pitch, and roll, with the latter three performed while in vacuo. The scan drive provides a resolution of 0.03 arc sec with linearity over the 12 degree range of ∼1.5 arc sec and absolute reproducibility of 1 arc sec. 5 refs., 5 figs

Uniquely identifiable tamper-evident device using coupling between subwavelength gratings

Science.gov (United States)

Fievre, Ange Marie Patricia

Reliability and sensitive information protection are critical aspects of integrated circuits. A novel technique using near-field evanescent wave coupling from two subwavelength gratings (SWGs), with the input laser source delivered through an optical fiber is presented for tamper evidence of electronic components. The first grating of the pair of coupled subwavelength gratings (CSWGs) was milled directly on the output facet of the silica fiber using focused ion beam (FIB) etching. The second grating was patterned using e-beam lithography and etched into a glass substrate using reactive ion etching (RIE). The slightest intrusion attempt would separate the CSWGs and eliminate near-field coupling between the gratings. Tampering, therefore, would become evident. Computer simulations guided the design for optimal operation of the security solution. The physical dimensions of the SWGs, i.e. period and thickness, were optimized, for a 650 nm illuminating wavelength. The optimal dimensions resulted in a 560 nm grating period for the first grating etched in the silica optical fiber and 420 nm for the second grating etched in borosilicate glass. The incident light beam had a half-width at half-maximum (HWHM) of at least 7 microm to allow discernible higher transmission orders, and a HWHM of 28 microm for minimum noise. The minimum number of individual grating lines present on the optical fiber facet was identified as 15 lines. Grating rotation due to the cylindrical geometry of the fiber resulted in a rotation of the far-field pattern, corresponding to the rotation angle of moire fringes. With the goal of later adding authentication to tamper evidence, the concept of CSWGs signature was also modeled by introducing random and planned variations in the glass grating. The fiber was placed on a stage supported by a nanomanipulator, which permitted three-dimensional displacement while maintaining the fiber tip normal to the surface of the glass substrate. A 650 nm diode laser was

Abatement of waste gases and water during the processes of semiconductor fabrication.

Science.gov (United States)

Wen, Rui-mei; Liang, Jun-wu

2002-10-01

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Laser action on rare earth doped nitride semiconductor thin layers

International Nuclear Information System (INIS)

Oussif, A.; Diaf, M.

2010-01-01

Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

Preparation and characterisation of light emitting porous semiconductors

International Nuclear Information System (INIS)

Harris, P.J.

1996-01-01

Semiconducting materials exhibit electrical conductivity in the region between that of metals and insulators. The electronic properties depend upon the particular element and the level of impurities contained within it. These materials are the basis of today's electronics industry with silicon being the most important element. It was believed until recently that efficient photoluminescence in the visible region was not possible from silicon due to its relatively small, indirect band-gap (1.12 eV). For this reason semiconductors with a larger, direct band-gap such as gallium arsenide have been used for optical devices. Photoluminescence from silicon has been observed in the infrared region but this was of little use to the opto-electronics industry. However, when silicon is in the form of small nano-structures, photoluminescence can be observed in the visible region from red to blue. This photoluminescence corresponds to a shift in the band gap to between 1.5 eV and 4.5 eV. This is in accordance with the predictions of quantum mechanics for structures of this scale. Nano-structures of silicon and of other semiconductors are relatively easy to produce. Electro-chemical etching is by far the most reliable method, resulting in uniform and reproducible structures. Anodic etching in a hydrofluoric acid based etch solution results in the silicon becoming porous to a depth of the order of microns. The lateral dimensions of these porous structures are in the range of a few nanometres resulting in an aspect ratio of the order of 1000:1. These materials studied in this work have been studied with the aid of EXAFS, scanning probe microscopy and Muon spectroscopy in order to determine the local structures. Measurements of the photoluminescence intensity have been taken at the synchrotron radiation facility, (Daresbury Laboratory). These results show that the observed photoluminescence is temperature dependent. The porous silicon samples studied for this work showed

GISAXS study of Au-coated light-induced polymer gratings

Energy Technology Data Exchange (ETDEWEB)

Castro-Colin, M., E-mail: miguel.castro-colin@bruker.com; Korolkov, D. [Bruker AXS, Rheinbrueckenstr. 49, 76187 Karlsruhe (Germany); Yadavalli, N. S. [Nanostructured Materials Lab, The University of Georgia, 30602 Athens, Georgia (United States); Mayorova, M.; Kentzinger, M. [Research Center Juelich, 52425 Juelich (Germany); Santer, S. [Institute of Physics and Astronomy, University of Potsdam, 14476 Potsdam (Germany)

2015-07-23

Surface Relief Gratings (SRGs) are inscribed in the Au-coated azobenzene containing photosensitive polymer films on a glass substrate. The structures consist of micrometer-period sinusoidal patterns of sub-micron amplitudes, formed by photo-isomerization and molecular reorientation processes in the polymer film during exposure to the light interference pattern that drove the formation of a SRG; the precursor is a stack sequence of Au, polymer, and glass. The SRG structures were exposed in GISAXS geometry to high-intensity X-ray radiation from a liquid Ga source (0.134 nm). Scattered photons were registered by a 2D detector, and their intensity distribution enabled us to characterize the structures. Analysis of the 2D patterns yielded information about the pitch of the gratings as well as the thickness of the films forming the gratings. The GISAXS experiments were carried out at the Research Center Juelich.

Highly Sensitive Cadmium Concentration Sensor Using Long Period Grating

Directory of Open Access Journals (Sweden)

A. S. Lalasangi

2011-08-01

Full Text Available In this paper we have proposed a simple and effective Long Period Grating chemical sensor for detecting the traces of Cadmium (Cd++ in drinking water at ppm level. Long Period gratings (LPG were fabricated by point-by-point technique with CO2 laser. We have characterized the LPG concentration sensor sensitivity for different solutions of Cd concentrations varying from 0.01 ppm to 0.04 ppm by injecting white Light source and observed transmitted spectra using Optical Spectrum Analyzer (OSA. Proper reagents have been used in the solutions for detection of the Cd species. The overall shift in wavelength is 10 nm when surrounding medium gradually changed from water to 0.04 ppm of cadmium concentrations. A comparative study has been done using sophisticated spectroscopic atomic absorption spectrometer (AAS and Inductively Coupled Plasma (ICP instruments. The spectral sensitivity enhancement was done by modifying grating surface with gold nanoparticles.

Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

Science.gov (United States)

Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

2015-06-23

We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

Binary pseudo-random gratings and arrays for calibration of the modulation transfer function of surface profilometers: recent developments

Energy Technology Data Exchange (ETDEWEB)

Barber, Samuel K.; Soldate, Paul; Anderson, Erik H.; Cambie, Rossana; Marchesini, Stefano; McKinney, Wanye R.; Takacs, Peter Z.; Voronov, Dmitry L.; Yashchuk, Valeriy V.

2009-07-07

The major problem of measurement of a power spectral density (PSD) distribution of the surface heights with surface profilometers arises due to the unknown Modulation Transfer Function (MTF) of the instruments. The MTF tends to distort the PSD at higher spatial frequencies. It has been suggested [Proc. SPIE 7077-7, (2007), Opt. Eng. 47 (7), 073602-1-5 (2008)] that the instrumental MTF of a surface profiler can be precisely measured using standard test surfaces based on binary pseudo-random (BPR) patterns. In the cited work, a one dimensional (1D) realization of the suggested method based on use of BPR gratings has been demonstrated. Here, we present recent achievements made in fabricating and using two-dimensional (2D) BPR arrays that allow for a direct 2D calibration of the instrumental MTF. The 2D BPRAs were used as standard test surfaces for 2D MTF calibration of the MicromapTM-570 interferometric microscope with all available objectives. The effects of fabrication imperfections on the efficiency of calibration are also discussed.

16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

International Nuclear Information System (INIS)

Zhao Lei; An Junming; Zhang Jiashun; Song Shijiao; Wu Yuanda; Hu Xiongwei

2011-01-01

A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, free spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. (semiconductor devices)

Deep-etched sinusoidal polarizing beam splitter grating.

Science.gov (United States)

Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lv, Peng

2010-04-01

A sinusoidal-shaped fused-silica grating as a highly efficient polarizing beam splitter (PBS) is investigated based on the simplified modal method. The grating structure depends mainly on the ratio of groove depth to grating period and the ratio of incident wavelength to grating period. These ratios can be used as a guideline for the grating design at different wavelengths. A sinusoidal-groove PBS grating is designed at a wavelength of 1310 nm under Littrow mounting, and the transmitted TM and TE polarized waves are mainly diffracted into the zeroth order and the -1st order, respectively. The grating profile is optimized by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient (>95.98%) over the O-band wavelength range (1260-1360 nm) for both TE and TM polarizations. The sinusoidal grating can exhibit higher diffraction efficiency, larger extinction ratio, and less reflection loss than the rectangular-groove PBS grating. By applying wet etching technology on the rectangular grating, which was manufactured by holographic recording and inductively coupled plasma etching technology, the sinusoidal grating can be approximately fabricated. Experimental results are in agreement with theoretical values.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Theoretical Investigation of Subwavelength Gratings and Vertical Cavity Lasers Employing Grating Structures

DEFF Research Database (Denmark)

Taghizadeh, Alireza

This thesis deals with theoretical investigations of a newly proposed grating structure, referred to as hybrid grating (HG) as well as vertical cavity lasers based on the grating reflectors. The HG consists of a near-subwavelength grating layer and an unpatterned high-refractive-index cap layer...... directions, which is analogous to electronic quantum wells in conduction or valence bands. Several interesting configurations of heterostructures have been investigated and their potential in fundamental physics study and applications are discussed. For numerical and theoretical studies, a three...... feasibility than the HCG-based ones. Furthermore, the concept of cavity dispersion in vertical cavities is introduced and its importance in the modal properties is numerically investigated. The dispersion curvature of a cavity mode is interpreted as the effective photon mass of the cavity mode. In a vertical...

Electron emission from MOS electron emitters with clean and cesium covered gold surface

DEFF Research Database (Denmark)

Nielsen, Gunver; Thomsen, Lasse Bjørchmar; Johansson, Martin

2009-01-01

MOS (metal-oxide-semiconductor) electron emitters consisting of a Si substrate, a SiO2 tunnel barrier and a Ti (1 nm)/Au(7 nm) top-electrode, with an active area of 1 cm(2) have been produced and studied with surface science techniques under UHV (ultra high vacuum) conditions and their emission...... characteristics have been investigated. It is known, that deposition of an alkali metal on the emitting surface lowers the work function and increases the emission efficiency. For increasing Cs coverages the surface has been characterized by X-ray Photoelectron Spectroscopy (XPS), Ion Scattering Spectroscopy (ISS...

Nanointaglio fabrication of optical lipid multilayer diffraction gratings with applications in biosensing

Science.gov (United States)

Lowry, Troy Warren

The dynamic self-organization of lipids in biological systems is a highly regulated process that enables the compartmentalization of living systems at microscopic and nanoscopic levels. Exploiting the self-organization and innate biofunctionality of lyotropic liquid crystalline phospholipids, a novel nanofabrication process called "nanointaglio" was invented in order to rapidly and scalably integrate lipid nanopatterns onto the surface. The work presented here focuses on using nanointaglio fabricated lipid diffraction micro- and nanopatterns for the development of new sensing and bioactivity studies. The lipids are patterned as diffraction gratings for sensor functionality. The lipid multilayer gratings operate as nanomechanical sensor elements that are capable of transducing molecular binding to fluid lipid multilayers into optical signals in a label free manner due to shape changes in the lipid nanostructures. To demonstrate the label free detection capabilities, lipid nanopatterns are shown to be suitable for the integration of chemically different lipid multilayer gratings into a sensor array capable of distinguishing vapors by means of an optical nose. Sensor arrays composed of six different lipid formulations are integrated onto a surface and their optical response to three different vapors (water, ethanol and acetone) in air as well as pH under water is monitored as a function of time. Principal component analysis of the array response results in distinct clustering, indicating the suitability of the arrays for distinguishing these analytes. Importantly, the nanointaglio process used is capable of producing lipid gratings out of different materials with sufficiently uniform heights for the fabrication of an optical nose. A second main application is demonstrated for the study of membrane binding proteins. Although in vitro methods for assaying the catalytic activity of individual enzymes are well established, quantitative methods for assaying the kinetics of

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Curved VPH gratings for novel spectrographs

Science.gov (United States)

Clemens, J. Christopher; O'Donoghue, Darragh; Dunlap, Bart H.

2014-07-01

The introduction of volume phase holographic (VPH) gratings into astronomy over a decade ago opened new possibilities for instrument designers. In this paper we describe an extension of VPH grating technology that will have applications in astronomy and beyond: curved VPH gratings. These devices can disperse light while simultaneously correcting aberrations. We have designed and manufactured two different kinds of convex VPH grating prototypes for use in off-axis reflecting spectrographs. One type functions in transmission and the other in reflection, enabling Offnerstyle spectrographs with the high-efficiency and low-cost advantages of VPH gratings. We will discuss the design process and the tools required for modelling these gratings along with the recording layout and process steps required to fabricate them. We will present performance data for the first convex VPH grating produced for an astronomical spectrograph.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

Science.gov (United States)

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor plasmonic crystals: active control of THz extinction

International Nuclear Information System (INIS)

Schaafsma, M C; Rivas, J Gómez

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

Fabrication of 200 nanometer period centimeter area hard x-ray absorption gratings by multilayer deposition

Science.gov (United States)

Lynch, S K; Liu, C; Morgan, N Y; Xiao, X; Gomella, A A; Mazilu, D; Bennett, E E; Assoufid, L; de Carlo, F; Wen, H

2012-01-01

We describe the design and fabrication trials of x-ray absorption gratings of 200 nm period and up to 100:1 depth-to-period ratios for full-field hard x-ray imaging applications. Hard x-ray phase-contrast imaging relies on gratings of ultra-small periods and sufficient depth to achieve high sensitivity. Current grating designs utilize lithographic processes to produce periodic vertical structures, where grating periods below 2.0 μm are difficult due to the extreme aspect ratios of the structures. In our design, multiple bilayers of x-ray transparent and opaque materials are deposited on a staircase substrate, and mostly on the floor surfaces of the steps only. When illuminated by an x-ray beam horizontally, the multilayer stack on each step functions as a micro-grating whose grating period is the thickness of a bilayer. The array of micro-gratings over the length of the staircase works as a single grating over a large area when continuity conditions are met. Since the layers can be nanometers thick and many microns wide, this design allows sub-micron grating periods and sufficient grating depth to modulate hard x-rays. We present the details of the fabrication process and diffraction profiles and contact radiography images showing successful intensity modulation of a 25 keV x-ray beam. PMID:23066175

Figure ground segregation modulates perceived direction of ambiguous moving gratings and plaids.

Science.gov (United States)

Tommasi, L; Vallortigara, G

1999-02-01

A translating oriented grating viewed through a circular aperture with an occluding area in the middle appeared to move alternately in an oblique or in a vertical direction depending on the foreground/background assignment on the central occluding area. The effect occurred even when the central area was simply removed from the display, thus giving rise to a 'subjective' occluder. Parametric studies revealed that the probability of seeing oblique or vertical motion was affected by the size of the central area but not by its contrast relationships with the grating. Similar phenomena of ambiguous motion direction were observed using changes in colour along a translating grating that produced neon colour spreading effects, or using oriented edge discontinuities that collapsed into subjective plaids composed of two one-dimensional gratings. These results are discussed with respect to the hypothesis that surface segmentation mechanisms play a crucial part in the interpretation of motion signals.

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Dendritic azo compounds as a new type amorphous molecular material with quick photoinduced surface-relief-grating formation ability

Science.gov (United States)

He, Yaning; Gu, Xinyu; Guo, Miaocai; Wang, Xiaogong

2008-09-01

A series of dendritic azobenzene-containing compounds have been synthesized as a new type amorphous molecular material, which can show quick surface-relief-grating (SRG) formation ability upon light irradiation. For the synthesis, the dendritic precursor tris(2-(ethyl(phenyl)amino)ethyl)benzene-1,3,5-tricarboxylate and tris(3,5-bis(2-(ethyl(phenyl)amino)ethoxy)benzyl)benzene-1,3,5-tricarboxylate were prepared by esterification reactions between 1,3,5-benzenetricarbonyl chloride and N-ethyl- N-hydroxyethyl-aniline and 3,5-bis[2-( N-ethylanilino)ethoxy] benzylalcohol. The precursors were, respectively reacted with the diazonium salts of 4-nitroaniline, 4-aminobenzoic acid, and 4-aminobenzonitrile to introduce different types of donor-acceptor azo chromophores at the peripheral positions. The structure and properties of the dendritic azo compounds were characterized by the spectroscopic methods and thermal analysis. The surface-relief-grating (SRG) formation behavior of the dendritic azo compounds was studied by exposing the spin-coated thin films to an interference pattern of laser beams (532 nm) at modest intensity (100 mW/cm 2). The results show that the azo compounds can form stable amorphous glasses in a broad temperature range. The glass transition temperatures ( Tgs) depend on the backbone structures and the type of the peripheral azo chromophors. The type of the electron withdrawing groups in the p-positions of the terminal azobenzene units shows a significant influence on the SRG inscription rate. For the compounds containing the same type azo chromophores, the SRG inscription rate is also affected by the backbone structure.

Theory and Applications of Surface Plasmon Resonance, Resonant Mirror, Resonant Waveguide Grating, and Dual Polarization Interferometry Biosensors

Directory of Open Access Journals (Sweden)

Billy W. Day

2010-11-01

Full Text Available Biosensors have been used extensively in the scientific community for several purposes, most notably to determine association and dissociation kinetics, protein-ligand, protein-protein, or nucleic acid hybridization interactions. A number of different types of biosensors are available in the field, each with real or perceived benefits over the others. This review discusses the basic theory and operational arrangements of four commercially available types of optical biosensors: surface plasmon resonance, resonant mirror, resonance waveguide grating, and dual polarization interferometry. The different applications these techniques offer are discussed from experiments and results reported in recently published literature. Additionally, recent advancements or modifications to the current techniques are also discussed.

Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1998-01-01

We demonstrate: the use of an ultrafast scanning tunneling microscope on a semiconductor surface. Laser-induced transient signals with 1.8 ps rise time are detected, The investigated sample is a low-temperature grown GaAs layer plated on a sapphire substrate with a thin gold layer that serves as st...... bias contact, For comparison, the measurements are performed with the tip in contact to the sample as well as in tunneling above the surface, In contact and under bias, the transient signals are identified as a transient photocurrent, An additional signal is generated by a transient voltage induced...... by the nonuniform carrier density created by the absorption of the light (photo Dember effect). The transient depends in sign and in shape on the direction of optical excitation. This signal is the dominating transient in tunneling mode. The signals are explained by a capacitive coupling across the tunneling gap...

Spherical grating based x-ray Talbot interferometry

Energy Technology Data Exchange (ETDEWEB)

Cong, Wenxiang, E-mail: congw@rpi.edu, E-mail: xiy2@rpi.edu, E-mail: wangg6@rpi.edu; Xi, Yan, E-mail: congw@rpi.edu, E-mail: xiy2@rpi.edu, E-mail: wangg6@rpi.edu; Wang, Ge, E-mail: congw@rpi.edu, E-mail: xiy2@rpi.edu, E-mail: wangg6@rpi.edu [Biomedical Imaging Center, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-11-15

Purpose: Grating interferometry is a state-of-the-art x-ray imaging approach, which can acquire information on x-ray attenuation, phase shift, and small-angle scattering simultaneously. Phase-contrast imaging and dark-field imaging are very sensitive to microstructural variation and offers superior contrast resolution for biological soft tissues. However, a common x-ray tube is a point-like source. As a result, the popular planar grating imaging configuration seriously restricts the flux of photons and decreases the visibility of signals, yielding a limited field of view. The purpose of this study is to extend the planar x-ray grating imaging theory and methods to a spherical grating scheme for a wider range of preclinical and clinical applications. Methods: A spherical grating matches the wave front of a point x-ray source very well, allowing the perpendicular incidence of x-rays on the grating to achieve a higher visibility over a larger field of view than the planer grating counterpart. A theoretical analysis of the Talbot effect for spherical grating imaging is proposed to establish a basic foundation for x-ray spherical gratings interferometry. An efficient method of spherical grating imaging is also presented to extract attenuation, differential phase, and dark-field images in the x-ray spherical grating interferometer. Results: Talbot self-imaging with spherical gratings is analyzed based on the Rayleigh–Sommerfeld diffraction formula, featuring a periodic angular distribution in a polar coordinate system. The Talbot distance is derived to reveal the Talbot self-imaging pattern. Numerical simulation results show the self-imaging phenomenon of a spherical grating interferometer, which is in agreement with the theoretical prediction. Conclusions: X-ray Talbot interferometry with spherical gratings has a significant practical promise. Relative to planar grating imaging, spherical grating based x-ray Talbot interferometry has a larger field of view and

Spherical grating based x-ray Talbot interferometry

International Nuclear Information System (INIS)

Cong, Wenxiang; Xi, Yan; Wang, Ge

2015-01-01

Purpose: Grating interferometry is a state-of-the-art x-ray imaging approach, which can acquire information on x-ray attenuation, phase shift, and small-angle scattering simultaneously. Phase-contrast imaging and dark-field imaging are very sensitive to microstructural variation and offers superior contrast resolution for biological soft tissues. However, a common x-ray tube is a point-like source. As a result, the popular planar grating imaging configuration seriously restricts the flux of photons and decreases the visibility of signals, yielding a limited field of view. The purpose of this study is to extend the planar x-ray grating imaging theory and methods to a spherical grating scheme for a wider range of preclinical and clinical applications. Methods: A spherical grating matches the wave front of a point x-ray source very well, allowing the perpendicular incidence of x-rays on the grating to achieve a higher visibility over a larger field of view than the planer grating counterpart. A theoretical analysis of the Talbot effect for spherical grating imaging is proposed to establish a basic foundation for x-ray spherical gratings interferometry. An efficient method of spherical grating imaging is also presented to extract attenuation, differential phase, and dark-field images in the x-ray spherical grating interferometer. Results: Talbot self-imaging with spherical gratings is analyzed based on the Rayleigh–Sommerfeld diffraction formula, featuring a periodic angular distribution in a polar coordinate system. The Talbot distance is derived to reveal the Talbot self-imaging pattern. Numerical simulation results show the self-imaging phenomenon of a spherical grating interferometer, which is in agreement with the theoretical prediction. Conclusions: X-ray Talbot interferometry with spherical gratings has a significant practical promise. Relative to planar grating imaging, spherical grating based x-ray Talbot interferometry has a larger field of view and

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Micro-deformation measurement on the concrete roadway surface slabs using Fiber Bragg Grating and analysis by computational simulation

Energy Technology Data Exchange (ETDEWEB)

Serpa, C M; Gomez, N D [Instituto Tecnologico Metropolitano Institucion Universitaria (ITM), Medellin A. A. 54954 (Colombia); Velez, F J, E-mail: claudiaserpa@itm.edu.co [Universidad EAFIT, Medellin (Colombia)

2011-01-01

This work shows a non-invasive method for micro-deformation measurements on concrete structures using Bragg grating sensors in optical fibers adhered to the surface. We present the measurements on roadway slabs under a load of 10 kN, and we find an approximated ratio of 2:1 between the deformation registered by the sensors and the values from a computational simulation with the finite element method. We propose the use of these sensors for structural monitoring of the slabs and this installation shape for avoiding bends that can damage the edges in the optical fiber in embebed sensors in vertical shape.

Development of a Novel Spectrophotometer for Biochemical Analyzer Based on Volume Holography Transmissive Grating and Linear CCD

International Nuclear Information System (INIS)

Ren Zhong; Liu Guodong; Huang Zhen; Zeng Lvming; Dai Longmin

2011-01-01

The classical surface-embossed plane and concave grating are usually used as the diffraction grating in some spectrophotometers. But the minute cracks are produced on the surface of the gratings' grooves, which leads to generate the stray-light and decrease the efficiency of instrument. Therefore, a novel custom-built spectrophotometer for BCA is developed in this paper. Meanwhile, the volume holography transmissive (VHT) grating is used as the diffraction grating in this spectrophotometer. Additionally, a high resolution CCD and data acquisition (DAQ) card with combined the virtual software platform based on LabVIEW are used to design the spectral acquisition and analysis system. Experimental results show that the spectral range and the diffraction efficiency of the spectrophotometer for BCA are greatly increased. The spectral range of the spectrophotometer for BCA can reach 300-1000 nm, its wavelength resolution can reach 1nm. And, it uses the back-splitting-light technology and multi-channel parallel analysis. Compared with other same types, this spectrophotometer has many advantages, such as, higher efficiency, simpler algorithm, higher accuracy, cheaper cost and fewer stray-light and higher imaging quality, etc. Therefore, this spectrophotometer for BCA based on VHT grating will has the greatly potential values in the fields of the biochemical or medical research.

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul

2015-06-26

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

The Flexibility of Pusher Furnace Grate

Directory of Open Access Journals (Sweden)

Słowik J.A.

2016-12-01

Full Text Available The lifetime of guide grates in pusher furnaces for heat treatment could be increased by raising the flexibility of their structure through, for example, the replacement of straight ribs, parallel to the direction of grate movement, with more flexible segments. The deformability of grates with flexible segments arranged in two orientations, i.e. crosswise (perpendicular to the direction of compression and lengthwise (parallel to the direction of compression, was examined. The compression process was simulated using SolidWorks Simulation program. Relevant regression equations were also derived describing the dependence of force inducing the grate deformation by 0.25 mm ‒ modulus of grate elasticity ‒ on the number of flexible segments in established orientations. These calculations were made in Statistica and Scilab programs. It has been demonstrated that, with the same number of segments, the crosswise orientation of flexible segments increases the grate structure flexibility in a more efficient way than the lengthwise orientation. It has also been proved that a crucial effect on the grate flexibility has only the quantity and orientation of segments (crosswise / lengthwise, while the exact position of segments changes the grate flexibility by less than 1%.

Monolithic mode-locked lasers with deeply dry etched Bragg mirror

DEFF Research Database (Denmark)

Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

Commercial mode-locked vertical external cavity surface emitting lasers

Science.gov (United States)

Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2018-02-01

This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

Full quantum treatment of charge dynamics in amorphous molecular semiconductors

Science.gov (United States)

de Vries, Xander; Friederich, Pascal; Wenzel, Wolfgang; Coehoorn, Reinder; Bobbert, Peter A.

2018-02-01

We present a treatment of charge dynamics in amorphous molecular semiconductors that accounts for the coupling of charges to all intramolecular phonon modes in a fully quantum mechanical way. Based on ab initio calculations, we derive charge transfer rates that improve on the widely used semiclassical Marcus rate and obtain benchmark results for the mobility and energetic relaxation of electrons and holes in three semiconductors commonly applied in organic light-emitting diodes. Surprisingly, we find very similar results when using the simple Miller-Abrahams rate. We conclude that extracting the disorder strength from temperature-dependent charge transport studies is very possible but extracting the reorganization energy is not.

Enhancement of terahertz radiation in a Smith-Purcell backward-wave oscillator by an inverse wet-etched grating

International Nuclear Information System (INIS)

Kim, Jung-Il; Jeon, Seok-Gy; Kim, Geun-Ju; Kim, Jaehong

2011-01-01

A terahertz (THz) Smith-Purcell (SP) backward-wave oscillator with an inverse wet-etched grating based on silicon has been proposed to enhance radiation intensity. This grating strengthens the interactions between an electron beam and the evanescent wave due to the adjacent surface structure between gratings that improves the magnitude of the electric field up to 1.7 times compared to the conventional rectangular gratings. A two-dimensional particle-in-cell (PIC) simulation shows that the radiated power is increased up to 2.3 times higher at the radiated frequency of 0.66 THz for an electron-beam energy of 30 keV.

Perovskite-type oxide films combined with gratings for reduction of material consumption and improvement of thermochromism property

International Nuclear Information System (INIS)

Huang Jinguo; Xuan Yimin; Li Qiang

2011-01-01

Combination of thermochromism of perovskite-type materials and gratings can result in some interesting variations of the spectral properties of structured surfaces. This paper aims at investigating thermal absorptive/radiative characteristics of structured thermochromic material La 0.825 Sr 0.175 MnO 3 (LSMO) with metallic and/or dielectric gratings. Numerical computation is conducted to obtain the distribution of the spectral absorptance of such structured surfaces with different structural parameters. The directional and temperature dependence of absorptance are also analyzed. The results reveal that compared with bulk LSMO material, the structured surface of LSMO achieves an improved thermochromic performance and much thinner layer of a structured LSMO film by combining the film with one-dimensional Al and SiO 2 gratings. Therefore, the other advantage of such structured surface is that the reduction of material consumption and weight is achieved due to the smaller LSMO layer thickness, which may be vital for thermal management of space vehicles.

Varied line-space gratings and applications

International Nuclear Information System (INIS)

McKinney, W.R.

1991-01-01

This paper presents a straightforward analytical and numerical method for the design of a specific type of varied line-space grating system. The mathematical development will assume plane or nearly-plane spherical gratings which are illuminated by convergent light, which covers many interesting cases for synchrotron radiation. The gratings discussed will have straight grooves whose spacing varies across the principal plane of the grating. Focal relationships and formulae for the optical grating-pole-to-exist-slit distance and grating radius previously presented by other authors will be derived with a symbolic algebra system. It is intended to provide the optical designer with the tools necessary to design such a system properly. Finally, some possible advantages and disadvantages for application to synchrotron to synchrotron radiation beamlines will be discussed

Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro

1989-01-01

A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

Energy Technology Data Exchange (ETDEWEB)

Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

2017-01-30

Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

Polarization-dependent single-beam laser-induced grating-like effects on titanium films

International Nuclear Information System (INIS)

Camacho-Lopez, Santiago; Evans, Rodger; Escobar-Alarcon, Luis; Camacho-Lopez, Miguel A.; Camacho-Lopez, Marco A.

2008-01-01

In this paper we present results on polarization-dependent laser-induced effects on titanium (Ti) thin films. We irradiated the titanium films, in ambient air, using a nanosecond Nd:YAG laser (532 nm, 9 ns pulse duration, 10 Hz). Using a series of pulses of fluence well below the ablation threshold, it was possible to form grating-like structures, whose grooves run parallel to the linear polarization of the incident beam. No grating-like structures were obtained when circularly polarized light was used. Our results revealed the remarkable formation of tiny (100 nm and even smaller diameter) craters, which self-arrange quasi-periodically along the ridges (never on the valleys) of the grating-like structure. Optical and scanning electron microscopy were used to study the laser-induced changes on the surface of the titanium films. Micro-Raman spectroscopy was used to analyze the irradiated areas on the titanium films. The Raman analysis demonstrated that the grooves in the grating-like structure, build up from the laser-induced oxidation of titanium. This is the first time, to the best of our knowledge, that periodic surface structures are reported to be induced below the ablation threshold regime, with the grooves made of crystalline metal oxide, in this case TiO 2 in the well-known Rutile phase. The laser irradiated areas on the film acquired selective (upon recording polarization) holographic reflectance

Polarization-dependent single-beam laser-induced grating-like effects on titanium films

Energy Technology Data Exchange (ETDEWEB)

Camacho-Lopez, Santiago [Departamento de Optica, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km 107 Carretera Tijuana-Ensenada, Ensenada, Baja California 22860 (Mexico)], E-mail: camachol@cicese.mx; Evans, Rodger [Departamento de Optica, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km 107 Carretera Tijuana-Ensenada, Ensenada, Baja California 22860 (Mexico); Escobar-Alarcon, Luis [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Camacho-Lopez, Miguel A. [Facultad de Medicina, Universidad Autonoma del Estado de Mexico, Paseo Tollocan s/n, esq. Jesus Carranza, Toluca, Estado de Mexico 50120 (Mexico); Camacho-Lopez, Marco A. [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Tollocan s/n, esq. Paseo Colon, Toluca, Estado de Mexico, 50110 (Mexico)

2008-12-30

In this paper we present results on polarization-dependent laser-induced effects on titanium (Ti) thin films. We irradiated the titanium films, in ambient air, using a nanosecond Nd:YAG laser (532 nm, 9 ns pulse duration, 10 Hz). Using a series of pulses of fluence well below the ablation threshold, it was possible to form grating-like structures, whose grooves run parallel to the linear polarization of the incident beam. No grating-like structures were obtained when circularly polarized light was used. Our results revealed the remarkable formation of tiny (100 nm and even smaller diameter) craters, which self-arrange quasi-periodically along the ridges (never on the valleys) of the grating-like structure. Optical and scanning electron microscopy were used to study the laser-induced changes on the surface of the titanium films. Micro-Raman spectroscopy was used to analyze the irradiated areas on the titanium films. The Raman analysis demonstrated that the grooves in the grating-like structure, build up from the laser-induced oxidation of titanium. This is the first time, to the best of our knowledge, that periodic surface structures are reported to be induced below the ablation threshold regime, with the grooves made of crystalline metal oxide, in this case TiO{sub 2} in the well-known Rutile phase. The laser irradiated areas on the film acquired selective (upon recording polarization) holographic reflectance.

Talbot Carpet Simulation for X-ray grating interferometer

Energy Technology Data Exchange (ETDEWEB)

Kim, Youngju; Oh, Ohsung; Jeong, Hanseong; Kim, Jeongho; Lee, Seung Wook [Pusan National University, Busan (Korea, Republic of); Kim, Jongyul; Moon, Myungkook [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

In this study, Talbot carpet simulator has been developed to visualize the X-ray grating interference patterns in grating interferometer. We have simulated X-ray interference for a variety of simulations and demonstrated a few examples in this summary. Grating interferometer produces interference of X-ray called Talbot pattern with gratings manufactured in micro scale. Talbot pattern is self-images of phase grating which develops interference as beam splitter that is one of gratings consisted of interferometer. As the other gratings, there are source grating makes coherence and analyze grating is used to analyze interference onto detector. Talbot carpet has been studied as the beam behavior which is distinguished with common X-ray imaging systems. It is helpful to understand grating interferometer and possible to expect beams' oscillation for designing theoretically. We confirm pattern has periodicity produced by interference after pi and pi/2 phase grating and changes in the perpendicular direction to entrance face according to phase objects.

Imaging properties of high aspect ratio absorption gratings for use in preclinical x-ray grating interferometry.

Science.gov (United States)

Trimborn, Barbara; Meyer, Pascal; Kunka, Danays; Zuber, Marcus; Albrecht, Frederic; Kreuer, Sascha; Volk, Thomas; Baumbach, Tilo; Koenig, Thomas

2016-01-21

X-ray grating interferometry is one among various methods that allow extracting the so-called phase and visibility contrasts in addition to the well-known transmission images. Crucial to achieving a high image quality are the absorption gratings employed. Here, we present an in-depth analysis of how the grating type and lamella heights influence the final images. Benchmarking gratings of two different designs, we show that a frequently used proxy for image quality, a grating's so-called visibility, is insufficient to predict contrast-to-noise ratios (CNRs). Presenting scans from an excised rat lung, we demonstrate that the CNRs obtained for transmission and visibility images anti-correlate. This is explained by the stronger attenuation implied by gratings that are engineered to provide high visibilities by means of an increased lamella height. We show that even the visibility contrast can suffer from this effect when the associated reduced photon flux on the detector is not outweighed by a corresponding gain in visibility. Resulting in an inevitable trade-off between the quality of the two contrasts, the question of how an optimal grating should be designed can hence only be answered in terms of Pareto optimality.

10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings

Science.gov (United States)

Kang, J. H.; Wenzel, H.; Hoffmann, V.; Freier, E.; Sulmoni, L.; Unger, R.-S.; Einfeldt, S.; Wernicke, T.; Kneissl, M.

2018-02-01

Single longitudinal mode operation of laterally coupled distributed feedback (DFB) laser diodes (LDs) based on GaN containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated using i-line stepper lithography and inductively coupled plasma etching. A threshold current of 82 mA, a slope efficiency of 1.7 W/A, a single peak emission at 404.5 nm with a full width at half maximum of 0.04 nm and a side mode suppression ratio of > 23 dB at an output power of about 46 mW were achieved under pulsed operation. The shift of the lasing wavelength of DFB LDs with temperature was around three times smaller than that of conventional ridge waveguide LDs.

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

topics including growth and heteroepitaxy, bulk GaN substrates, theory and modelling, optical properties, laser diodes and LEDs as well as transport properties and electronics. Farrell et al review materials and growth issues for high-performance non- and semipolar light-emitting devices, and Scholz provides an overview of heteroepitaxial growth of semipolar GaN. Okada et al review growth mechanisms of non- and semipolar GaN layers on patterned sapphire substrates, and Vennéguès discusses defect reduction methods for heteroepitaxially grown non- and semipolar III-nitride films. Leung et al explain how kinetic Wulff plots can be used to design and control non-polar and semipolar GaN heteroepitaxy, and a contribution by Sawaki et al explores the impurity incorporation in (1-101) GaN grown on Si substrates. In the area of bulk crystal growth Kucharski et al review non- and semipolar GaN substrates by ammonothermal growth, and Chichibu et al discuss the challenges for epitaxial growth of InGaN on free-standing m-plane GaN substrates. Calculation of semipolar orientations for wurtzitic semiconductor heterostructures and their application to nitrides and oxides are reviewed by Bigenwald et al, and Ito et al present an ab initio approach to reconstruction, adsorption, and incorporation on GaN surfaces. Finally, the theoretical description of non-polar and semipolar nitride semiconductor quantum-well structures is presented by Ahn et al. In a discussion of the optical properties, Kisin et al discuss the effect of the quantum well population on the optical characteristics of polar, semipolar and non-polar III-nitride light emitters, and Jönen et al investigate the indium incorporation and optical properties of non- and semipolar GaInN QW structures. Wernicke et al explore the emission wavelength of polar, non-polar, and semipolar InGaN quantum wells and the incorporation of indium. In a contribution by Melo et al, the gain in polar and non-polar/semipolar gallium

Theoretical studies of structural and electronic properties of overlayers on semiconductor surfaces

International Nuclear Information System (INIS)

Cakmak, M.

1999-06-01

In this thesis we report the results of ab initio density functional calculations of equilibrium atomic geometry, electronic states and chemical bonding for the adsorption of elemental S and H 2 S on chosen semiconductor surfaces. The results are in good agreement with the available experimental results and indicate the need for further experimental work. In Chapter 2 of this thesis, I describe the formalism of the ab initio pseudopotential theory and the computational procedures which are used in this thesis. In the following chapter, a few experimental techniques are discussed, which we subsequently use their results to compare with our theoretical calculated results. In Chapter 4 the passivation of S on InP(110) is investigated. Two sets of geometries are used; non-reacted geometries and reacted geometries. For non-reacted full-monolayer coverage, the epitaxially continued layer structure is found to be the most energetically favourable and it exhibits a good semiconducting nature. For an ordered reacted model with the adsorbate S atoms exchanged with their neighbouring P atoms, the average vertical distance between the top two layers is in agreement with x-ray standing wave analysis, but is characterized by a small band gap. In Chapter 5 adsorption of the H 2 S molecule on the InP(110), GaAs(110) and GaP(110) surfaces is investigated within a dissociative adsorption model. In general the adsorption of H 2 S on the three semiconductors shows similar behaviour. In Chapter 6 the adsorption of elemental S on Si(001) is investigated using three adsorption models; hemisulfide-(2 x 1) structure, monosulfide-(1 x 1) structure, and disulfide-(1 x 1) structure. An analysis of the surface free energy suggests that the monosulfide structure is more stable than the hemisulfide and disulfide structures. This result is also used to investigate the adsorption of elemental S on the Ge(001) surface. In Chapter 7, the adsorption of the H 2 S molecule on the Si(001) and Ge(001

Optical Fiber Grating based Sensors

DEFF Research Database (Denmark)

Michelsen, Susanne

2003-01-01

In this thesis differenct optical fiber gratings are used for sensor purposes. If a fiber with a core concentricity error (CCE) is used, a directional dependent bend sensor can be produced. The CCE direction can be determined by means of diffraction. This makes it possible to produce long......-period gratings in a fiber with a CCE direction parallel or perpendicular to the writing direction. The maximal bending sensitivity is independent on the writing direction, but the detailed bending response is different in the two cases. A temperature and strain sensor, based on a long-period grating and two...... sampled gratings, was produced and investigated. It is based on the different temperature and strain response of these gratings. Both a transfer matrix method and an overlap calculation is performed to explain the sensor response. Another type of sensor is based on tuning and modulation of a laser...

Design of a grating for studying Smith-Purcell radiation and electron acceleration

International Nuclear Information System (INIS)

Fernow, R.C.

1989-01-01

We describe work on the design of a diffraction grating which we intend to use for studying the production of Smith-Purcell radiation and the acceleration of electrons. We have developed computer codes based on the solution of the appropriate Maxwell's equations. A specific grating profile is given which is feasible to construct and which supports enhanced surface accelerating modes. We examine the possibility of using the Smith-Purcell effect to make a beam position monitor. 13 refs., 10 figs., 2 tabs

Design of a grating for studying Smith-Purcell radiation and electron acceleration

International Nuclear Information System (INIS)

Fernow, R.C.

1989-01-01

We describe work on the design fo a diffracton grating which we intend to use for studying the production of Smith-Purcell radiation and the acceleration of electrons. We have developed computer codes based on the solution of the appropriate Maxwell's equations. A specific grating profile is given which is feasible to construct and which supports enhanced surface accelerating modes. We examine the possibility of using the Smith-Purcell effect to make a beam position monitor. copyright 1989 American Institute of Physics

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Grating-coupled surface plasmon resonance gas sensing based on titania anatase nanoporous films

Science.gov (United States)

Gazzola, Enrico; Cittadini, Michela; Brigo, Laura; Brusatin, Giovanna; Guglielmi, Massimo; Romanato, Filippo; Martucci, Alessandro

2015-08-01

Nanoporous TiO2 anatase film has been investigated as sensitive layer in Surface Plasmon Resonance sensors for the detection of hydrogen and Volatile Organic Compounds, specifically methanol and isopropanol. The sensors consist of a TiO2 nanoporous matrix deposited above a metallic plasmonic grating, which can support propagating Surface Plasmon Polaritons. The spectral position of the plasmonic resonance dip in the reflectance spectra was monitored and correlated to the interaction with the target gases. Reversible blue-shifts of the resonance frequency, up to more than 2 THz, were recorded in response to the exposure to 10000 ppm of H2 in N2 at 300°C. This shift cannot be explained by the mere refractive index variation due to the target gas filling the pores, that is negligible. Reversible red-shifts were instead recorded in response to the exposure to 3000 ppm of methanol or isopropanol at room temperature, of magnitudes up to 14 THz and 9 THz, respectively. In contrast, if the only sensing mechanism was the mere pores filling, the shifts should have been larger during the isopropanol detection. We therefore suggest that other mechanisms intervene in the analyte/matrix interaction, capable to produce an injection of electrons into the sensitive matrix, which in turn induces a decrease of the refractive index.

Plasmonic Perovskite Light-Emitting Diodes Based on the Ag-CsPbBr3 System.

Science.gov (United States)

Zhang, Xiaoli; Xu, Bing; Wang, Weigao; Liu, Sheng; Zheng, Yuanjin; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

2017-02-08

The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr 3 perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr 3 nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.

Semiconductor particle mediated photoelectron transfers in bilayer lipid membranes

International Nuclear Information System (INIS)

Fendler, J.H.; Baral, S.

1989-01-01

This paper discusses semiconductor particles in situ generated on the cis surface of glyceryl monooleate (GMO) bilayer lipid membranes (BLMs), that have been used to mediate photoelectric effects. The presence of semiconductors on the BLM surface is addressed. The observed photoelectric effects are rationalized and presented

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

Science.gov (United States)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Design and construct of a tunable semiconductor laser

Directory of Open Access Journals (Sweden)

J. Sabbaghzadeh

2000-06-01

Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

Biosensing with optical fiber gratings

Science.gov (United States)

Chiavaioli, Francesco; Baldini, Francesco; Tombelli, Sara; Trono, Cosimo; Giannetti, Ambra

2017-06-01

Optical fiber gratings (OFGs), especially long-period gratings (LPGs) and etched or tilted fiber Bragg gratings (FBGs), are playing an increasing role in the chemical and biochemical sensing based on the measurement of a surface refractive index (RI) change through a label-free configuration. In these devices, the electric field evanescent wave at the fiber/surrounding medium interface changes its optical properties (i.e. intensity and wavelength) as a result of the RI variation due to the interaction between a biological recognition layer deposited over the fiber and the analyte under investigation. The use of OFG-based technology platforms takes the advantages of optical fiber peculiarities, which are hardly offered by the other sensing systems, such as compactness, lightness, high compatibility with optoelectronic devices (both sources and detectors), and multiplexing and remote measurement capability as the signal is spectrally modulated. During the last decade, the growing request in practical applications pushed the technology behind the OFG-based sensors over its limits by means of the deposition of thin film overlays, nanocoatings, and nanostructures, in general. Here, we review efforts toward utilizing these nanomaterials as coatings for high-performance and low-detection limit devices. Moreover, we review the recent development in OFG-based biosensing and identify some of the key challenges for practical applications. While high-performance metrics are starting to be achieved experimentally, there are still open questions pertaining to an effective and reliable detection of small molecules, possibly up to single molecule, sensing in vivo and multi-target detection using OFG-based technology platforms.

Biosensing with optical fiber gratings

Directory of Open Access Journals (Sweden)

Chiavaioli Francesco

2017-06-01

Full Text Available Optical fiber gratings (OFGs, especially long-period gratings (LPGs and etched or tilted fiber Bragg gratings (FBGs, are playing an increasing role in the chemical and biochemical sensing based on the measurement of a surface refractive index (RI change through a label-free configuration. In these devices, the electric field evanescent wave at the fiber/surrounding medium interface changes its optical properties (i.e. intensity and wavelength as a result of the RI variation due to the interaction between a biological recognition layer deposited over the fiber and the analyte under investigation. The use of OFG-based technology platforms takes the advantages of optical fiber peculiarities, which are hardly offered by the other sensing systems, such as compactness, lightness, high compatibility with optoelectronic devices (both sources and detectors, and multiplexing and remote measurement capability as the signal is spectrally modulated. During the last decade, the growing request in practical applications pushed the technology behind the OFG-based sensors over its limits by means of the deposition of thin film overlays, nanocoatings, and nanostructures, in general. Here, we review efforts toward utilizing these nanomaterials as coatings for high-performance and low-detection limit devices. Moreover, we review the recent development in OFG-based biosensing and identify some of the key challenges for practical applications. While high-performance metrics are starting to be achieved experimentally, there are still open questions pertaining to an effective and reliable detection of small molecules, possibly up to single molecule, sensing in vivo and multi-target detection using OFG-based technology platforms.

Surface Tension Directed Fluidic Self-Assembly of Semiconductor Chips across Length Scales and Material Boundaries

Directory of Open Access Journals (Sweden)

Shantonu Biswas

2016-03-01

Full Text Available This publication provides an overview and discusses some challenges of surface tension directed fluidic self-assembly of semiconductor chips which are transported in a liquid medium. The discussion is limited to surface tension directed self-assembly where the capture, alignment, and electrical connection process is driven by the surface free energy of molten solder bumps where the authors have made a contribution. The general context is to develop a massively parallel and scalable assembly process to overcome some of the limitations of current robotic pick and place and serial wire bonding concepts. The following parts will be discussed: (2 Single-step assembly of LED arrays containing a repetition of a single component type; (3 Multi-step assembly of more than one component type adding a sequence and geometrical shape confinement to the basic concept to build more complex structures; demonstrators contain (3.1 self-packaging surface mount devices, and (3.2 multi-chip assemblies with unique angular orientation. Subsequently, measures are discussed (4 to enable the assembly of microscopic chips (10 μm–1 mm; a different transport method is introduced; demonstrators include the assembly of photovoltaic modules containing microscopic silicon tiles. Finally, (5 the extension to enable large area assembly is presented; a first reel-to-reel assembly machine is realized; the machine is applied to the field of solid state lighting and the emerging field of stretchable electronics which requires the assembly and electrical connection of semiconductor devices over exceedingly large area substrates.

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging.

Science.gov (United States)

Pan, Caofeng; Chen, Mengxiao; Yu, Ruomeng; Yang, Qing; Hu, Youfan; Zhang, Yan; Wang, Zhong Lin

2016-02-24

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface capped fluorescent semiconductor nanoparticles: radiolytic synthesis and some of its biological applications

International Nuclear Information System (INIS)

Saha, A.

2006-01-01

Semiconductor nanocrystals or colloidal quantum dots (QD's) have generated great research interest because of their unusual properties arising out of quantum confinement effects. Many researchers in the field of nanotechnology focus on the 'high quality' semiconductor quantum dots. A good synthetic route should yield nanoparticles with narrow size distribution, good crystallinity, high photostability, desired surface properties and high photoluminescence quantum efficiency. In the domain of colloidal chemistry, reverse micellar synthesis, high temperature thermolysis using organometallic precursors and synthesis in aqueous media using polyphosphates or thiols as stabilizers are the most prominent ones. In contrast, γ-radiation assisted synthesis can offer a simplified approach to prepare size-controlled nanoparticles at room temperature. Syntheses of thiol-capped II-VI nanoparticles by radiolytic method, its characterization and some of its luminescence-based applications of biological relevance will be presented. The versatility of thiols (RSH) can be emphasized here as changing the R-group imparts different functionality to the particles and thus chemical behavior of the particles can be manipulated according to the application intended for. (authors)

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications