Multi-field electron emission pattern of 2D emitter: Illustrated with graphene

Science.gov (United States)

Luo, Ma; Li, Zhibing

2016-11-01

The mechanism of laser-assisted multi-field electron emission of two-dimensional emitters is investigated theoretically. The process is basically a cold field electron emission but having more controllable components: a uniform electric field controls the emission potential barrier, a magnetic field controls the quantum states of the emitter, while an optical field controls electron populations of specified quantum states. It provides a highly orientational vacuum electron line source whose divergence angle over the beam plane is inversely proportional to square root of the emitter height. Calculations are carried out for graphene with the armchair emission edge, as a concrete example. The rate equation incorporating the optical excitation, phonon scattering, and thermal relaxation is solved in the quasi-equilibrium approximation for electron population in the bands. The far-field emission patterns, that inherit the features of the Landau bands, are obtained. It is found that the optical field generates a characteristic structure at one wing of the emission pattern.

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

Science.gov (United States)

Mills, Edmund M; Min, Bok Ki; Kim, Seong K; Kim, Seong Jun; Kang, Min-A; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok; Jung, Jongwan; Kim, Sangtae

2015-08-26

Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

International Nuclear Information System (INIS)

Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

2014-01-01

The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

Graphene field emitters: A review of fabrication, characterization and properties

Energy Technology Data Exchange (ETDEWEB)

Chen, Leifeng, E-mail: chlf@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yu, Hu; Zhong, Jiasong; Song, Lihui [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wu, Jun, E-mail: wujun@hdu.edu.cn [Institute of Electron Device & Application, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018 (China); Su, Weitao [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

2017-06-15

Highlights: • The preparation, characterization and field emission properties for Gs are reviewed. • The review provides an updated progress on design and construction of Gs field emitters. • The review offers fundamental insights into understanding and design of Gs emitters. • The review can broach the subject and inspire readers in field of Gs based emitters. - Abstract: Graphenes are beneficial to electrons field emission due to its high aspect ratio, high carrier density, the larger carrier mobility, excellent electrical and thermal conductivity, excellent mechanical strength and chemical stability. In recent years, graphene or reduced oxide graphene field emitters have been successfully constructed by various methods such as chemical vapor deposition, chemical exfoliation, electrophoretic deposition, screen-printing and chemical synthesis methods. Graphene emitters are tried to construct in distribution with some angles or vertical orientation with respect to the substrate surface. The vertical alignment of graphene sheets or edges arrays can facilitate efficient electron emission from the atomically thick sheets. Therefore they have even more a low turn-on and threshold-field electronic field, high field enhancement factor, high current stability and high luminance. In this review, we shortly survey and discuss recent research progress in graphene field emission properties with particular an emphasis on their preparing method, characterization and applications in devices especially for vertical graphene and single layer graphene, also including their challenges and future prospects.

Effectively Improved Field Emission Properties of Multiwalled Carbon Nanotubes/Graphenes Composite Field Emitter by Covering on the Si Pyramidal Structure

DEFF Research Database (Denmark)

Chen, Leifeng; Yu, Hua; Zhong, Jiasong

2015-01-01

The composite nanostructure emitter of multiwalled carbon nanotubes and graphenes was deposited on pyramidal silicon substrate by the simple larger scale electrophoretic deposition process. The field emission (FE) properties of the composite/pyramidal Si device were greatly improved compared...

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

Science.gov (United States)

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

Directory of Open Access Journals (Sweden)

Zhanling Lu

2010-01-01

Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

Enhanced field emission properties of tilted graphene nanoribbons on aggregated TiO{sub 2} nanotube arrays

Energy Technology Data Exchange (ETDEWEB)

Hung, Shang-Chao, E-mail: schung99@gmail.com [Department of Information Technology & Communication, Shih Chien University Kaohsiung Campus, Neimen, Kaohsiung 845, Taiwan (China); Chen, Yu-Jyun [Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

2016-07-15

Highlights: • Graphene nanoribbons (GNBs) slanted on aggregate TiO{sub 2} nanotube (A-TNTs) as field-emitters. • Turn-on electric field and field enhancement factor β are dependent on the substrate morphology. • Various quantities of GNRs are deposited on top of A-TNTs (GNRs/A-TNTs) with different morphologies. • With an increase of GNBs compositions, the specimens' turn-on electric field is reduced to 2.8 V/μm. • The field enhancement factor increased rapidly to about 1964 with the addition of GNRs. - Abstract: Graphene nanoribbons (GNRs) slanted on aggregate TiO{sub 2} nanotube arrays (A-TNTs) with various compositions as field-emitters are reported. The morphology, crystalline structure, and composition of the as-obtained specimens were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectrometry. The dependence of the turn-on electric field and the field enhancement factor β on substrate morphology was studied. An increase of GNRs reduces the specimens’ turn-on electric field to 2.8 V/μm and the field enhancement factor increased rapidly to about 1964 with the addition of GNRs. Results show a strong dependence of the field emission on GNR composition aligned with the gradient on the top of the A-TNT substrate. Enhanced FE properties of the modified TNTs can be mainly attributed to their improved electrical properties and rougher surface morphology.

Comment on "Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties" [AIP Advances 5, 097130 (2015)

Science.gov (United States)

Rani, Reena; Bhatia, Ravi

2018-03-01

In their research paper, M. Song et al. [AIP ADVANCES 5, 097130 (2015)] have claimed to have achieved enhanced field emission (FE) characteristics of carbon nanotubes (CNT)/graphene hybrids experimentally, exhibiting improved FE parameters e.g. turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum emission current density (Jmax) of 5.76 mA/cm2, and field enhancement factor (β) of ˜1.3 × 104. The authors have emphasized on the surprisingly high value of β to be the basis of their claim of achieving superior FE performance which is further attributed to the optimized mass ratio CNT/ graphene, which is 5:1 in the present case. However, the claim based upon high value of β is misleading because it does not corroborate with the obtained Jmax parameter. Also, the obtained value of J is quite low in the mentioned study as compared to the reported values. For an instance, Sameera et al. [J. Appl. Phys. 111, 044307 (2012) & Appl. Phys. Lett. 102, 033102 (2013)] have reported FE properties of CNT composites and reduced graphene oxide with Jmax and β values of the order of ˜102 mA/cm2 and 6 × 103, respectively. Therefore, the conclusions drawn by M. Song et al. [AIP ADVANCES 5, 097130 (2015)] in their paper do no hold.

Electronic structure and field emission properties of nitrogen doped graphene nano-flakes (GNFs:N) and carbon nanotubes (CNTs:N)

Energy Technology Data Exchange (ETDEWEB)

Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

2016-09-01

Highlights: • Nitrogen doped graphene nano-flakes (GNFs:N) and carbon nano-tubes (CNTs:N) are used to study the electronic/bonding structure along with their defects state. • The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy used for the study of the defects states of CNTs:N than GNFs:N. • The electron field emission result shows that the turn on electric field is lower in case of CNTs:N than GNFs:N. • All results are good agreement with XANES and the results obtained from Raman spectra. - Abstract: Substitution of hetero-atom doping is a promising route to modulate the outstanding material properties of carbon nanotubes and graphene for customized applications. Nitrogen-doping has been introduced to ensure tunable work-function, enhanced n-type carrier concentration, diminished surface energy, and manageable polarization. Along with the promising assessment of N-doping effects, research on the N-doped carbon based composite structures is emerging for the synergistic integration with various functional materials. Nitrogen undoped/doped graphene nano-flakes (GNFs/GNFs:N) and multiwall carbon nano-tubes (MWCNTs/MWCNTs:N) are used for comparative study of their electronic/bonding structure along with their defects state. X-ray absorption near edge structure (XANES) spectroscopy shows that the GNFs:N produce mainly pyridine like structure; whereas MWCNTs:N shows graphitic nitrogen atoms are attached with the carbon lattice. The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy shows that the defects is higher in MWCNTs:N than GNFs:N. The electron field emission result shows that the turn on electric field is lower (higher electron emission current) in case of MWCNTs:N than GNFs:N and are good agreement with XANES and the results obtained from Raman spectra.

Graphene field-effect devices

Science.gov (United States)

Echtermeyer, T. J.; Lemme, M. C.; Bolten, J.; Baus, M.; Ramsteiner, M.; Kurz, H.

2007-09-01

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

Field Emission from Carbon Nanostructures

Directory of Open Access Journals (Sweden)

Filippo Giubileo

2018-03-01

Full Text Available Field emission electron sources in vacuum electronics are largely considered to achieve faster response, higher efficiency and lower energy consumption in comparison with conventional thermionic emitters. Carbon nanotubes had a leading role in renewing attention to field emission technologies in the early 1990s, due to their exceptional electron emitting properties enabled by their large aspect ratio, high electrical conductivity, and thermal and chemical stability. In the last decade, the search for improved emitters has been extended to several carbon nanostructures, comprising carbon nanotubes, either individual or films, diamond structures, graphitic materials, graphene, etc. Here, we review the main results in the development of carbon-based field emitters.

Reply to Comment on ‘Metallic nanowire–graphene hybrid nanostructures for highly flexible field emission devices’

International Nuclear Information System (INIS)

Lee, Joohyung; Lee, Hyungwoo; Lee, Byung Yang; Hong, Seunghun; Heo, Kwang

2012-01-01

In our previous paper (Arif et al 2011 Nanotechnology 22 355709), we developed a method to prepare metallic nanowire–graphene hybrid nanostructures and applied it to the fabrication of flexible field emission devices. For the quantitative analysis of the devices, the basic Fowler–Nordheim model was used. However, as pointed out by Forbes (2012 Nanotechnology 23 288001) the basic Fowler–Nordheim model should be corrected when the quantum confinement effect and the screening effect are considered. Forbes also developed a method that checks quantitatively the consistency between the experimental data and the theoretical assumptions. These discussions should provide an important theoretical framework in the quantitative analysis of our devices as well as large area field emitters in general. (reply)

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

Directory of Open Access Journals (Sweden)

Wan Sik Hwang

2015-01-01

Full Text Available We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.

Ultra-thin graphene edges at the nanowire tips: a cascade cold cathode with two-stage field amplification

International Nuclear Information System (INIS)

Maiti, Uday N; Majumder, Tapas Pal; Maiti, Soumen; Chattopadhyay, Kalyan K

2011-01-01

A multistage field emitter based on graphene-linked ZnO nanowire array is realized by means of spin-coating a graphene dispersion (reduced graphene oxide) over a nanostructured platform followed by plasma modification. Spin-coating leads to interlinking of graphene sheets between the neighboring nanowires whereas plasma etching in the subsequent step generates numerous ultra-sharp graphene edges at the nanowire tips. The inherent tendency of graphene to lay flat over a plane substrate can easily be bypassed through the currently presented nanostructure platform based technique. The turn-on and threshold field significantly downshifted compared to the individual components in the cascade emitter. Through the facile electron transfer from nanowires to graphene due to band bending at the ZnO–graphene interface together with multistage geometrical field enhancement at both the nanowire and graphene edges remain behind this enriched field emission from the composite cold cathode. This strategy will open up a new direction to integrate the functionalities of both the graphene array and several other inorganic nanostructure array for practical electronic devices.

Density functional theory for field emission from carbon nano-structures.

Science.gov (United States)

Li, Zhibing

2015-12-01

Electron field emission is understood as a quantum mechanical many-body problem in which an electronic quasi-particle of the emitter is converted into an electron in vacuum. Fundamental concepts of field emission, such as the field enhancement factor, work-function, edge barrier and emission current density, will be investigated, using carbon nanotubes and graphene as examples. A multi-scale algorithm basing on density functional theory is introduced. We will argue that such a first principle approach is necessary and appropriate for field emission of nano-structures, not only for a more accurate quantitative description, but, more importantly, for deeper insight into field emission. Copyright © 2015 The Author. Published by Elsevier B.V. All rights reserved.

Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

Science.gov (United States)

Liu, Jie (Inventor); Du, Chunsheng (Inventor); Qian, Cheng (Inventor); Gao, Bo (Inventor); Qiu, Qi (Inventor); Zhou, Otto Z. (Inventor)

2009-01-01

Carbon nanotube material having an outer diameter less than 10 nm and a number of walls less than ten are disclosed. Also disclosed are an electron field emission device including a substrate, an optionally layer of adhesion-promoting layer, and a layer of electron field emission material. The electron field emission material includes a carbon nanotube having a number of concentric graphene shells per tube of from two to ten, an outer diameter from 2 to 8 nm, and a nanotube length greater than 0.1 microns. One method to fabricate carbon nanotubes includes the steps of (a) producing a catalyst containing Fe and Mo supported on MgO powder, (b) using a mixture of hydrogen and carbon containing gas as precursors, and (c) heating the catalyst to a temperature above 950.degree. C. to produce a carbon nanotube. Another method of fabricating an electron field emission cathode includes the steps of (a) synthesizing electron field emission materials containing carbon nanotubes with a number of concentric graphene shells per tube from two to ten, an outer diameter of from 2 to 8 nm, and a length greater than 0.1 microns, (b) dispersing the electron field emission material in a suitable solvent, (c) depositing the electron field emission materials onto a substrate, and (d) annealing the substrate.

Density functional theory for field emission from carbon nano-structures

Energy Technology Data Exchange (ETDEWEB)

Li, Zhibing, E-mail: stslzb@mail.sysu.edu.cn

2015-12-15

Electron field emission is understood as a quantum mechanical many-body problem in which an electronic quasi-particle of the emitter is converted into an electron in vacuum. Fundamental concepts of field emission, such as the field enhancement factor, work-function, edge barrier and emission current density, will be investigated, using carbon nanotubes and graphene as examples. A multi-scale algorithm basing on density functional theory is introduced. We will argue that such a first principle approach is necessary and appropriate for field emission of nano-structures, not only for a more accurate quantitative description, but, more importantly, for deeper insight into field emission. - Highlights: • Applications of DFT to electron field emission of nano-structures are reviewed. • Fundamental concepts of field emission are re-visited with emphasis on the many-body effects. • New insights to field emission of nano-structures are obtained by multi-scale DFT calculations. • It is shown that the exchange–correlation effect on the emission barrier is significant. • Spontaneous symmetry breaking in field emission of CNT has been predicted.

Pseudomagnetic fields and triaxial strain in graphene

DEFF Research Database (Denmark)

Settnes, Mikkel; Power, Stephen; Jauho, Antti-Pekka

2016-01-01

Pseudomagnetic fields, which can result from nonuniform strain distributions, have received much attention in graphene systems due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 T. We examine systems with such strains confined to finite regions ("pseudoma......Pseudomagnetic fields, which can result from nonuniform strain distributions, have received much attention in graphene systems due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 T. We examine systems with such strains confined to finite regions......-binding calculations of single pseudomagnetic dots in extended graphene sheets confirm these predictions, and are also used to study the effect of rotating the strain direction with respect to the underlying graphene lattice, and varying the size of the pseudomagnetic dot....

Electromagnetic Field Redistribution in Metal Nanoparticle on Graphene.

Science.gov (United States)

Li, Keke; Liu, Anping; Wei, Dapeng; Yu, Keke; Sun, Xiaonan; Yan, Sheng; Huang, Yingzhou

2018-04-25

Benefiting from the induced image charge on metal film, the light energy is confined on a film surface under metal nanoparticle dimer, which is called electromagnetic field redistribution. In this work, electromagnetic field distribution of metal nanoparticle monomer or dimer on graphene is investigated through finite-difference time-domain method. The results point out that the electromagnetic field (EM) redistribution occurs in this nanoparticle/graphene hybrid system at infrared region where light energy could also be confined on a monolayer graphene surface. Surface charge distribution was analyzed using finite element analysis, and surface-enhanced Raman spectrum (SERS) was utilized to verify this phenomenon. Furthermore, the data about dielectric nanoparticle on monolayer graphene demonstrate this EM redistribution is attributed to strong coupling between light-excited surface charge on monolayer graphene and graphene plasmon-induced image charge on dielectric nanoparticle surface. Our work extends the knowledge of monolayer graphene plasmon, which has a wide range of applications in monolayer graphene-related film.

Graphene coated subwavelength wires: a theoretical investigation of emission and radiation properties

International Nuclear Information System (INIS)

Cuevas, Mauro

2017-01-01

Highlights: • Decay rate in a dielectric graphene coated wire. • Localized surface plasmons. • Excitation of multipolar resonances. - Abstract: This work analyzes the emission and radiation properties of a single optical emitter embedded in a graphene–coated subwavelength wire. We discuss the modifications of the spontaneous emission rate and the radiation efficiency as a function of the position and orientation of the dipole inside the wire. Our results show that these quantities can be enhanced by several orders of magnitude when the emission frequency coincides with one of the resonance frequencies of the graphene–coated wire. In particular, high–order plasmon resonances are excited when the emitter is moved from the wire center. Modifications resulting from varying the orientation of the dipole in the near field distribution and in the far field intensities are shown.

Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors

International Nuclear Information System (INIS)

Park, Hamin; Park, Ick-Joon; Jung, Dae Yool; Lee, Khang June; Yang, Sang Yoon; Choi, Sung-Yool

2016-01-01

We propose a polymer-free graphene transfer technique for chemical vapor deposition-grown graphene to ensure the intrinsic electrical properties of graphene for reliable transistor applications. The use of a metal catalyst as a supporting layer avoids contamination from the polymer material and graphene films become free of polymer residue after the transfer process. Atomic force microscopy and Raman spectroscopy indicate that the polymer-free transferred graphene shows closer properties to intrinsic graphene properties. The reliability of graphene field-effect transistors (GFETs) was investigated through the analysis of the negative gate bias-stress-induced instability. This work reveals the effect of polymer residues on the reliability of GFETs, and that the developed new polymer-free transfer method enhances the reliability. (letter)

Graphene Field Effect Transistor for Radiation Detection

Science.gov (United States)

Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

2016-01-01

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Near-field radiation between graphene-covered carbon nanotube arrays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Richard Z.; Liu, Xianglei; Zhang, Zhuomin M., E-mail: zhuomin.zhang@me.gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

2015-05-15

It has been shown that at small separation distances, thermal radiation between hyperbolic metamaterials is enhanced over blackbodies. This theoretical study considers near-field radiation when graphene is covered on the surfaces of two semi-infinite vertically aligned carbon nanotube (VACNT) arrays separated by a sub-micron vacuum gap. Doped graphene is found to improve photon tunneling in a broad hyperbolic frequency range, due to the interaction with graphene-graphene surface plasmon polaritons (SPP). In order to elucidate the SPP resonance between graphene on hyperbolic substrates, vacuum-suspended graphene sheets separated by similar gap distances are compared. Increasing the Fermi energy through doping shifts the spectral heat flux peak toward higher frequencies. Although the presence of graphene on VACNT does not offer huge near-field heat flux enhancement over uncovered VACNT, this study identifies conditions (i.e., gap distance and doping level) that best utilize graphene to augment near-field radiation. Through the investigation of spatial Poynting vectors, heavily doped graphene is found to increase penetration depths in hyperbolic modes and the result is sensitive to the frequency regime. This study may have an impact on designing carbon-based vacuum thermophotovoltaics and thermal switches.

Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

International Nuclear Information System (INIS)

Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

2013-01-01

The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

Graphene-graphite oxide field-effect transistors.

Science.gov (United States)

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Intrinsic graphene field effect transistor on amorphous carbon films

OpenAIRE

Tinchev, Savcho

2013-01-01

Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Jiménez, David; Chaves, Ferney [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Spain); Cummings, Aron W.; Van Tuan, Dinh [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Kotakoski, Jani [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria); Department of Physics, University of Helsinki, P.O. Box 43, 00014 University of Helsinki (Finland); Roche, Stephan [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

2014-01-27

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

International Nuclear Information System (INIS)

Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

2014-01-01

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices

Graphene spin capacitor for magnetic field sensing

OpenAIRE

Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

2010-01-01

An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

Ultrafast spontaneous emission modulation of graphene quantum dots interacting with Ag nanoparticles in solution

Energy Technology Data Exchange (ETDEWEB)

Zhao, Jianwei [Department of Physics, Shanghai University, Shanghai 200444 (China); Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Lu, Jian, E-mail: luj@sari.ac.cn; Wang, Zhongyang, E-mail: wangzy@sari.ac.cn [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Wang, Liang [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444 (China); Tian, Linfan [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); Deng, Xingxia [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Tian, Lijun [Department of Physics, Shanghai University, Shanghai 200444 (China); Pan, Dengyu [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

2016-07-11

We investigated the strong interaction between graphene quantum dots and silver nanoparticles in solution using time-resolved photoluminescence techniques. In solution, the silver nanoparticles are surrounded by graphene quantum dots and interacted with graphene quantum dots through exciton-plasmon coupling. An ultrafast spontaneous emission process (lifetime 27 ps) was observed in such a mixed solution. This ultrafast lifetime corresponds to the emission rate exceeding 35 GHz, with the purcell enhancement by a factor of ∼12. These experiment results pave the way for the realization of future high speed light sources applications.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

Science.gov (United States)

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

Graphene-on-Silicon Near-Field Thermophotovoltaic Cell

NARCIS (Netherlands)

Svetovoy, V. B.; Palasantzas, G.

2014-01-01

A graphene layer on top of a dielectric can dramatically influence the ability of the material for radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells. Instead of low-band-gap semiconductors it is proposed to

Low-field magnetotransport in graphene cavity devices

Science.gov (United States)

Zhang, G. Q.; Kang, N.; Li, J. Y.; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.

2018-05-01

Confinement and edge structures are known to play significant roles in the electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.

In-situ deposition of hydroxyapatite on graphene nanosheets

OpenAIRE

Neelgund, Gururaj M.; Oki, Aderemi; Luo, Zhiping

2013-01-01

Graphene nanosheets were effectively functionalized by in-situ deposition of hydroxyaptite through a facile chemical precipitation method. Prior to grafting of hydroxyapatite, chemically modified graphene nanosheets were obtained by the reduction of graphene oxide in presence of ethylenediamine. The resulting hydroxyapatite functionalized graphene nanosheets were characterized by attenuated total reflection IR spectroscopy, X-ray diffraction, field emission scanning electron microscopy, trans...

Tunable graphene antennas for selective enhancement of THz-emission

KAUST Repository

Filter, Robert; Farhat, Mohamed; Steglich, Mathias; Alaee, Rasoul; Rockstuhl, Carsten; Lederer, Falk L.

2013-01-01

In this paper, we will introduce THz graphene antennas that strongly enhance the emission rate of quantum systems at specific frequencies. The tunability of these antennas can be used to selectively enhance individual spectral features. We will show as an example that any weak transition in the spectrum of coronene can become the dominant contribution. This selective and tunable enhancement establishes a new class of graphene-based THz devices, which will find applications in sensors, novel light sources, spectroscopy, and quantum communication devices. © 2013 Optical Society of America.

Graphene-based field-effect transistor biosensors

Science.gov (United States)

Chen; , Junhong; Mao, Shun; Lu, Ganhua

2017-06-14

The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

Stable angular emission spectra in white organic light-emitting diodes using graphene/PEDOT:PSS composite electrode.

Science.gov (United States)

Cho, Hyunsu; Lee, Hyunkoo; Lee, Jonghee; Sung, Woo Jin; Kwon, Byoung-Hwa; Joo, Chul-Woong; Shin, Jin-Wook; Han, Jun-Han; Moon, Jaehyun; Lee, Jeong-Ik; Cho, Seungmin; Cho, Nam Sung

2017-05-01

In this work, we suggest a graphene/ poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) composite as a transparent electrode for stabilizing white emission of organic light-emitting diodes (OLEDs). Graphene/PEDOT:PSS composite electrodes have increased reflectance when compared to graphene itself, but their reflectance is still lower than that of ITO itself. Changes in the reflectance of the composite electrode have the advantage of suppressing the angular spectral distortion of white emission OLEDs and achieving an efficiency of 16.6% for white OLEDs, comparable to that achieved by graphene-only electrodes. By controlling the OLED structure to compensate for the two-beam interference effect, the CIE color coordinate change (Δxy) of OLEDs based on graphene/PEDOT:PSS composite electrodes is 0.018, less than that based on graphene-only electrode, i.e.,0.027.

First-principles simulations of Graphene/Transition-metal-Dichalcogenides/Graphene Field-Effect Transistor

Science.gov (United States)

Li, Xiangguo; Wang, Yun-Peng; Zhang, X.-G.; Cheng, Hai-Ping

A prototype field-effect transistor (FET) with fascinating properties can be made by assembling graphene and two-dimensional insulating crystals into three-dimensional stacks with atomic layer precision. Transition metal dichalcogenides (TMDCs) such as WS2, MoS2 are good candidates for the atomically thin barrier between two layers of graphene in the vertical FET due to their sizable bandgaps. We investigate the electronic properties of the Graphene/TMDCs/Graphene sandwich structure using first-principles method. We find that the effective tunnel barrier height of the TMDC layers in contact with the graphene electrodes has a layer dependence and can be modulated by a gate voltage. Consequently a very high ON/OFF ratio can be achieved with appropriate number of TMDC layers and a suitable range of the gate voltage. The spin-orbit coupling in TMDC layers is also layer dependent but unaffected by the gate voltage. These properties can be important in future nanoelectronic device designs. DOE/BES-DE-FG02-02ER45995; NERSC.

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Institute of Scientific and Technical Information of China (English)

潘洪亮; 金智; 麻芃; 郭建楠; 刘新宇; 叶甜春; 李佳; 敦少博; 冯志红

2011-01-01

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95％ active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.%Wafer-scale graphene Beld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition AI2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of l μm, are larger than 800MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene Geld-effect transistors, which paves the way for high-performance graphene devices and circuits.

Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

Energy Technology Data Exchange (ETDEWEB)

Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

2016-05-23

We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

Wetting and motion behaviors of water droplet on graphene under thermal-electric coupling field

Science.gov (United States)

Zhang, Zhong-Qiang; Dong, Xin; Ye, Hong-Fei; Cheng, Guang-Gui; Ding, Jian-Ning; Ling, Zhi-Yong

2015-02-01

Wetting dynamics and motion behaviors of a water droplet on graphene are characterized under the electric-thermal coupling field using classical molecular dynamics simulation method. The water droplet on graphene can be driven by the temperature gradient, while the moving direction is dependent on the electric field intensity. Concretely, the water droplet on graphene moves from the low temperature region to the high temperature region for the relatively weak electric field intensity. The motion acceleration increases with the electric field intensity on graphene, whereas the moving direction switches when the electric field intensity increases up to a threshold. The essence is the change from hydrophilic to hydrophobic for the water droplet on graphene at a threshold of the electric field intensity. Moreover, the driven force of the water droplet caused by the overall oscillation of graphene has important influence on the motion behaviors. The results are helpful to control the wettability of graphene and further develop the graphene-based fluidic nanodevices.

Graphene Dirac point tuned by ferroelectric polarization field

Science.gov (United States)

Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-04-01

Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Science.gov (United States)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Near-field heat transfer between graphene/hBN multilayers

Science.gov (United States)

Zhao, Bo; Guizal, Brahim; Zhang, Zhuomin M.; Fan, Shanhui; Antezza, Mauro

2017-06-01

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with hyperbolic phonon polaritons in a single hBN film to form hybrid polaritons that can assist photon tunneling. For periodic multilayer graphene/hBN structures, the stacked metallic/dielectric array can give rise to a further effective hyperbolic behavior, in addition to the intrinsic natural hyperbolic behavior of hBN. The effective hyperbolicity can enable more hyperbolic polaritons that enhance the photon tunneling and hence the near-field heat transfer. However, the hybrid polaritons on the surface, i.e., surface plasmon-phonon polaritons, dominate the near-field heat transfer between multilayer structures when the topmost layer is graphene. The effective hyperbolic regions can be well predicted by the effective medium theory (EMT), thought EMT fails to capture the hybrid surface polaritons and results in a heat transfer rate much lower compared to the exact calculation. The chemical potential of the graphene sheets can be tuned through electrical gating and results in an additional modulation of the heat transfer. We found that the near-field heat transfer between multilayer structures does not increase monotonously with the number of layers in the stack, which provides a way to control the heat transfer rate by the number of graphene layers in the multilayer structure. The results may benefit the applications of near-field energy harvesting and radiative cooling based on hybrid polaritons in two-dimensional materials.

Dynamical polarizability of graphene irradiated by circularly polarized ac electric fields

DEFF Research Database (Denmark)

Busl, Maria; Platero, Gloria; Jauho, Antti-Pekka

2012-01-01

We examine the low-energy physics of graphene in the presence of a circularly polarized electric field in the terahertz regime. Specifically, we derive a general expression for the dynamical polarizability of graphene irradiated by an ac electric field. Several approximations are developed...... that allow one to develop a semianalytical theory for the weak-field regime. The ac field changes qualitatively the single- and many-electron excitations of graphene: Undoped samples may exhibit collective excitations (in contrast to the equilibrium situation), and the properties of the excitations in doped...

Effects of charging and electric field on graphene functionalized with titanium

International Nuclear Information System (INIS)

Gürel, H Hakan; Ciraci, S

2013-01-01

Titanium atoms are adsorbed to graphene with a significant binding energy and render diverse functionalities to it. Carrying out first-principles calculations, we investigated the effects of charging and static electric field on the physical and chemical properties of graphene covered by Ti adatoms. When uniformly Ti covered graphene is charged positively, its antiferromagnetic ground state changes to ferromagnetic metal and attains a permanent magnetic moment. Static electric field applied perpendicularly causes charge transfer between Ti and graphene, and can induce metal–insulator transition. While each Ti adatom adsorbed to graphene atom can hold four hydrogen molecules with a weak binding, these molecules can be released by charging or applying electric field perpendicularly. Hence, it is demonstrated that charging and applied static electric field induce quasi-continuous and side specific modifications in the charge distribution and potential energy of adatoms absorbed to single-layer nanostructures, resulting in fundamentally crucial effects on their physical and chemical properties. (paper)

The effects of lithographic residues and humidity on graphene field ...

Indian Academy of Sciences (India)

humidity at graphene field effect transistors (GFETs). While the exact means of humidity interacting with hydropho- bic graphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface ... temperature quantum Hall effect, linear electron dispersion at the vicinity of the ...

Graphene Field Effect Transistor-Based Detectors for Detection of Ionizing Radiation

International Nuclear Information System (INIS)

Jovanovic, Igor; Cazalas, Edward; Childres, I.; Patil, A.; Koybasi, O.; Chen, Y-P.

2013-06-01

We present the results of our recent efforts to develop novel ionizing radiation sensors based on the nano-material graphene. Graphene used in the field effect transistor architecture could be employed to detect the radiation-induced charge carriers produced in undoped semiconductor absorber substrates, even without the need for charge collection. The detection principle is based on the high sensitivity of graphene to ionization-induced local electric field perturbations in the electrically biased substrate. We experimentally demonstrated promising performance of graphene field effect transistors for detection of visible light, X-rays, gamma-rays, and alpha particles. We propose improved detector architectures which could result in a significant improvement of speed necessary for pulsed mode operation. (authors)

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

Science.gov (United States)

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

Graphene-assisted near-field radiative heat transfer between corrugated polar materials

International Nuclear Information System (INIS)

Liu, X. L.; Zhang, Z. M.

2014-01-01

Graphene has attracted great attention in nanoelectronics, optics, and energy harvesting. Here, the near-field radiative heat transfer between graphene-covered corrugated silica is investigated based on the exact scattering theory. It is found that graphene can improve the radiative heat flux between silica gratings by more than one order of magnitude and alleviate the performance sensitivity to lateral shift. The underlying mechanism is mainly attributed to the improved photon tunneling of modes away from phonon resonances. Besides, coating with graphene leads to nonlocal radiative transfer that breaks Derjaguin's proximity approximation and enables corrugated silica to outperform bulk silica in near-field radiation.

On Graphene in the Interstellar Medium

Science.gov (United States)

Chen, X. H.; Li, Aigen; Zhang, Ke

2017-11-01

The possible detection of C24, a planar graphene that was recently reported to be in several planetary nebulae by García-Hernández et al., inspires us to explore whether and how much graphene could exist in the interstellar medium (ISM) and how it would reveal its presence through its ultraviolet (UV) extinction and infrared (IR) emission. In principle, interstellar graphene could arise from the photochemical processing of polycyclic aromatic hydrocarbon (PAH) molecules, which are abundant in the ISM, due to the complete loss of their hydrogen atoms, and/or from graphite, which is thought to be a major dust species in the ISM, via fragmentation caused by grain–grain collisional shattering. Both quantum-chemical computations and laboratory experiments have shown that the exciton-dominated electronic transitions in graphene cause a strong absorption band near 2755 \\mathringA . We calculate the UV absorption of graphene and place an upper limit of ∼5 ppm of C/H (i.e., ∼1.9% of the total interstellar C) on the interstellar graphene abundance. We also model the stochastic heating of graphene C24 in the ISM, excited by single starlight photons of the interstellar radiation field and calculate its IR emission spectra. We also derive the abundance of graphene in the ISM to be <5 ppm of C/H by comparing the model emission spectra with that observed in the ISM.

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

Directory of Open Access Journals (Sweden)

Charles Mackin

2018-02-01

Full Text Available This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs. Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.

Light-field-driven currents in graphene

Science.gov (United States)

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B.; Hommelhoff, Peter

2017-10-01

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10-15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10-18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in

Plasma-electric field controlled growth of oriented graphene for energy storage applications

Science.gov (United States)

Ghosh, Subrata; Polaki, S. R.; Kamruddin, M.; Jeong, Sang Mun; (Ken Ostrikov, Kostya

2018-04-01

It is well known that graphene grows as flat sheets aligned with the growth substrate. Oriented graphene structures typically normal to the substrate have recently attracted major attention. Most often, the normal orientation is achieved in a plasma-assisted growth and is believed to be due to the plasma-induced in-built electric field, which is usually oriented normal to the substrate. This work focuses on the effect of an in-built electric field on the growth direction, morphology, interconnectedness, structural properties and also the supercapacitor performance of various configurations of graphene structures and reveals the unique dependence of these features on the electric field orientation. It is shown that tilting of growth substrates from parallel to the normal direction with respect to the direction of in-built plasma electric field leads to the morphological transitions from horizontal graphene layers, to oriented individual graphene sheets and then interconnected 3D networks of oriented graphene sheets. The revealed transition of the growth orientation leads to a change in structural properties, wetting nature, types of defect in graphitic structures and also affects their charge storage capacity when used as supercapacitor electrodes. This simple and versatile approach opens new opportunities for the production of potentially large batches of differently oriented and structured graphene sheets in one production run.

Irradiation of graphene field effect transistors with highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

2016-09-01

In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

Graphene field effect transistor without an energy gap.

Science.gov (United States)

Jang, Min Seok; Kim, Hyungjun; Son, Young-Woo; Atwater, Harry A; Goddard, William A

2013-05-28

Graphene is a room temperature ballistic electron conductor and also a very good thermal conductor. Thus, it has been regarded as an ideal material for postsilicon electronic applications. A major complication is that the relativistic massless electrons in pristine graphene exhibit unimpeded Klein tunneling penetration through gate potential barriers. Thus, previous efforts to realize a field effect transistor for logic applications have assumed that introduction of a band gap in graphene is a prerequisite. Unfortunately, extrinsic treatments designed to open a band gap seriously degrade device quality, yielding very low mobility and uncontrolled on/off current ratios. To solve this dilemma, we propose a gating mechanism that leads to a hundredfold enhancement in on/off transmittance ratio for normally incident electrons without any band gap engineering. Thus, our saw-shaped geometry gate potential (in place of the conventional bar-shaped geometry) leads to switching to an off state while retaining the ultrahigh electron mobility in the on state. In particular, we report that an on/off transmittance ratio of 130 is achievable for a sawtooth gate with a gate length of 80 nm. Our switching mechanism demonstrates that intrinsic graphene can be used in designing logic devices without serious alteration of the conventional field effect transistor architecture. This suggests a new variable for the optimization of the graphene-based device--geometry of the gate electrode.

Influence of Fe nanoparticles diameters on the structure and electron emission studies of carbon nanotubes and multilayer graphene

International Nuclear Information System (INIS)

Sharma, Himani; Shukla, A.K.; Vankar, V.D.

2013-01-01

In this paper we report the effect of Fe film thickness on the growth, structure and electron emission characteristics of carbon nanotubes (CNTs) and multilayer graphene deposited on Si substrate. It is observed that the number of graphitic shells in carbon nanostructures (CNs) varies with the thickness of the catalyst depending on the average size of nanoparticles. Further, the Fe nanoparticles do not catalyze beyond a particular size of nanoclusters leading to the formation of multilayer graphene structure, instead of carbon nanotubes (CNTs). It is observed that the crystallinity of CNs enhances upon increasing the catalyst thickness. Multilayer graphene structures show improved crystallinity in comparison to CNTs as graphitic to defect mode intensity ratio (I D /I G ) decreases from 1.2 to 0.8. However, I 2D /I G value for multilayer graphene is found to be 1.1 confirming the presence of at least 10 layers of graphene in these samples. CNTs with smaller diameter show better electron emission properties with enhancement factor (γ C = 2.8 × 10 3 ) in comparison to multilayer graphene structure (γ C = 1.5 × 10 3 ). The better emission characteristics in CNTs are explained due to combination of electrons from edges as well as centers in comparison to the multilayer graphene. Highlights: ► Graphitic shells in CNTs and graphene depend on the size of Fe nanoparticles. ► The diameter of nanoparticles decides the morphology of CNTs and graphene. ► Multilayer graphene structures show improved crystallinity in comparison to CNTs. ► Multilayer graphene (MLG) has the γ C factor of 1.5 × 10 3 and CNTs has 2.8 × 10 3 . ► The nonlinearity in MLG may occur through change in work function.

Ultra-thin Glass Film Coated with Graphene: A New Material for Spontaneous Emission Enhancement of Quantum Emitter

Institute of Scientific and Technical Information of China (English)

Lu Sun; Chun Jiang

2015-01-01

We propose an ultra-thin glass film coated with graphene as a new kind of surrounding material which can greatly enhance spontaneous emission rate(SER) of dipole emitter embedded in it. With properly designed parameters,numerical results show that SER-enhanced factors as high as 1.286 9 106 can be achieved. The influences of glass film thickness and chemical potential/doping level of graphene on spontaneous emission enhancement are also studied in this paper. A comparison is made between graphene and other coating materials such as gold and silver to see their performances in SER enhancement.

A disorder induced field effect transistor in bilayer and trilayer graphene

International Nuclear Information System (INIS)

Xu Dongwei; Liu Haiwen; Sacksteder IV, Vincent; Sun Qingfeng; Song Juntao; Jiang Hua; Xie, X C

2013-01-01

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene. (paper)

Terahertz electric field driven electric currents and ratchet effects in graphene

Energy Technology Data Exchange (ETDEWEB)

Ganichev, Sergey D.; Weiss, Dieter; Eroms, Jonathan [Terahertz Center, University of Regensburg (Germany)

2017-11-15

Terahertz field induced photocurrents in graphene were studied experimentally and by microscopic modeling. Currents were generated by cw and pulsed laser radiation in large area as well as small-size exfoliated graphene samples. We review general symmetry considerations leading to photocurrents depending on linear and circular polarized radiation and then present a number of situations where photocurrents were detected. Starting with the photon drag effect under oblique incidence, we proceed to the photogalvanic effect enhancement in the reststrahlen band of SiC and edge-generated currents in graphene. Ratchet effects were considered for in-plane magnetic fields and a structure inversion asymmetry as well as for graphene with non-symmetric patterned top gates. Lastly, we demonstrate that graphene can be used as a fast, broadband detector of terahertz radiation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Charge-density depinning at metal contacts of graphene field-effect transistors

OpenAIRE

Nouchi, Ryo; Tanigaki, Katsumi

2010-01-01

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; h...

Active control of near-field radiative heat transfer between graphene-covered metamaterials

Science.gov (United States)

Zhao, Qimei; Zhou, Ting; Wang, Tongbiao; Liu, Wenxing; Liu, Jiangtao; Yu, Tianbao; Liao, Qinghua; Liu, Nianhua

2017-04-01

In this study, the near-field radiative heat transfer between graphene-covered metamaterials is investigated. The electric surface plasmons (SPs) supported by metamaterials can be coupled with the SPs supported by graphene. The near-field heat transfer between the graphene-covered metamaterials is significantly larger than that between metamaterials because of the strong coupling in our studied frequency range. The relationship between heat flux and chemical potential is studied for different vacuum gaps. Given that the chemical potential of graphene can be tuned by the external electric field, heat transfer can be actively controlled by modulating the chemical potential. The heat flux for certain vacuum gaps can reach a maximum value when the chemical potential is at a particular value. The results of this study are beneficial for actively controlling energy transfer.

Active control of near-field radiative heat transfer between graphene-covered metamaterials

International Nuclear Information System (INIS)

Zhao, Qimei; Zhou, Ting; Wang, Tongbiao; Liu, Wenxing; Liu, Jiangtao; Yu, Tianbao; Liao, Qinghua; Liu, Nianhua

2017-01-01

In this study, the near-field radiative heat transfer between graphene-covered metamaterials is investigated. The electric surface plasmons (SPs) supported by metamaterials can be coupled with the SPs supported by graphene. The near-field heat transfer between the graphene-covered metamaterials is significantly larger than that between metamaterials because of the strong coupling in our studied frequency range. The relationship between heat flux and chemical potential is studied for different vacuum gaps. Given that the chemical potential of graphene can be tuned by the external electric field, heat transfer can be actively controlled by modulating the chemical potential. The heat flux for certain vacuum gaps can reach a maximum value when the chemical potential is at a particular value. The results of this study are beneficial for actively controlling energy transfer. (paper)

Coupling behaviors of graphene/SiO2/Si structure with external electric field

Science.gov (United States)

Onishi, Koichi; Kirimoto, Kenta; Sun, Yong

2017-02-01

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

Spectral tuning of near-field radiative heat transfer by graphene-covered metasurfaces

Science.gov (United States)

Zheng, Zhiheng; Wang, Ao; Xuan, Yimin

2018-03-01

When two gratings are respectively covered by a layer of graphene sheet, the near-field radiative heat transfer between two parallel gratings made of silica (SiO2) could be greatly improved. As the material properties of doped silicon (n-type doping concentration is 1020 cm-3, marked as Si-20) and SiO2 differ greatly, we theoretically investigate the near-field radiative heat transfer between two parallel graphene-covered gratings made of Si-20 to explore some different phenomena, especially for modulating the spectral properties. The radiative heat flux between two parallel bulks made of Si-20 can be enhanced by using gratings instead of bulks. When the two gratings are respectively covered by a layer of graphene sheet, the radiative heat flux between two gratings made of Si-20 can be further enhanced. By tuning graphene chemical potential μ and grating filling factor f, due to the interaction between surface plasmon polaritons (SPPs) of graphene sheets and grating structures, the spectral properties of the radiative heat flux between two parallel graphene-covered gratings can be effectively regulated. This work will develop and supplement the effects of materials on the near-field radiative heat transfer for this kind of system configuration, paving a way to modulate the spectral properties of near-field radiative heat transfer.

Enhanced transconductance in a double-gate graphene field-effect transistor

Science.gov (United States)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

Science.gov (United States)

Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

2012-10-23

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

Graphene levitation and orientation control using a magnetic field

Science.gov (United States)

Niu, Chao; Lin, Feng; Wang, Zhiming M.; Bao, Jiming; Hu, Jonathan

2018-01-01

This paper studies graphene levitation and orientation control using a magnetic field. The torques in all three spatial directions induced by diamagnetic forces are used to predict stable conditions for different shapes of millimeter-sized graphite plates. We find that graphite plates, in regular polygon shapes with an even number of sides, will be levitated in a stable manner above four interleaved permanent magnets. In addition, the orientation of micrometer-sized graphene flakes near a permanent magnet is studied in both air and liquid environments. Using these analyses, we are able to simulate optical transmission and reflection on a writing board and thereby reveal potential applications using this technology for display screens. Understanding the control of graphene flake orientation will lead to the discovery of future applications using graphene flakes.

Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review

Energy Technology Data Exchange (ETDEWEB)

Green, Nathaniel S.; Norton, Michael L., E-mail: norton@marshall.edu

2015-01-01

Highlights: • The interaction of DNA, including DNA nanostructures, and graphene is reviewed. • Comparison of DNA graphene field-effect transistor (GFET) with other detection methods. • Discussion of challenges present in the detection mechanism of GFETs. • Use of DNA aptamer GFET sensors for the detection of small molecules and proteins. - Abstract: Graphene field-effect transistors (GFET) have emerged as powerful detection platforms enabled by the advent of chemical vapor deposition (CVD) production of the unique atomically thin 2D material on a large scale. DNA aptamers, short target-specific oligonucleotides, are excellent sensor moieties for GFETs due to their strong affinity to graphene, relatively short chain-length, selectivity, and a high degree of analyte variability. However, the interaction between DNA and graphene is not fully understood, leading to questions about the structure of surface-bound DNA, including the morphology of DNA nanostructures and the nature of the electronic response seen from analyte binding. This review critically evaluates recent insights into the nature of the DNA graphene interaction and its affect on sensor viability for DNA, small molecules, and proteins with respect to previously established sensing methods. We first discuss the sorption of DNA to graphene to introduce the interactions and forces acting in DNA based GFET devices and how these forces can potentially affect the performance of increasingly popular DNA aptamers and even future DNA nanostructures as sensor substrates. Next, we discuss the novel use of GFETs to detect DNA and the underlying electronic phenomena that are typically used as benchmarks for characterizing the analyte response of these devices. Finally, we address the use of DNA aptamers to increase the selectivity of GFET sensors for small molecules and proteins and compare them with other, state of the art, detection methods.

Graphite to Graphene via Graphene Oxide: An Overview on Synthesis, Properties, and Applications

Science.gov (United States)

Hansora, D. P.; Shimpi, N. G.; Mishra, S.

2015-12-01

This work represents a state-of-the-art technique developed for the preparation of graphene from graphite-metal electrodes by the arc-discharge method carried out in a continuous flow of water. Because of continuous arcing of graphite-metal electrodes, the graphene sheets were observed in water with uniformity and little damage. These nanosheets were subjected to various purification steps such as acid treatment, oxidation, water washing, centrifugation, and drying. The pure graphene sheets were analyzed using Raman spectrophotometry, x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), and tunneling electron microscopy (TEM). Peaks of Raman spectra were recorded at (1300-1400 cm-1) and (1500-1600 cm-1) for weak D-band and strong G-band, respectively. The XRD pattern showed 85.6% crystallinity of pure graphite, whereas pure graphene was 66.4% crystalline. TEM and FE-SEM micrographs revealed that graphene sheets were overlapped to each other and layer-by-layer formation was also observed. Beside this research work, we also reviewed recent developments of graphene and related nanomaterials along with their preparations, properties, functionalizations, and potential applications.

Near-field radiative heat transfer between graphene-covered hyperbolic metamaterials

Science.gov (United States)

Hong, Xiao-Juan; Li, Jian-Wen; Wang, Tong-Biao; Zhang, De-Jian; Liu, Wen-Xing; Liao, Qing-Hua; Yu, Tian-Bao; Liu, Nian-Hua

2018-04-01

We propose the use of graphene-covered silicon carbide (SiC) nanowire arrays (NWAs) for theoretical studies of near-field radiative heat transfer. The SiC NWAs exhibit a hyperbolic characteristic at an appropriately selected filling-volume fraction. The surface plasmon supported by graphene and the hyperbolic modes supported by SiC NWAs significantly affect radiative heat transfer. The heat-transfer coefficient (HTC) between the proposed structures is larger than that between SiC NWAs. We also find that the chemical potential of graphene plays an important role in modulating the HTC. The tunability of chemical potential through gate voltage enables flexible control of heat transfer using the graphene-covered SiC NWAs.

Magnetoplasmons in gapped graphene in a periodically modulated magnetic field

KAUST Repository

Tahir, Muhammad

2016-01-08

Motivated by recent experiments on long-lived magnetoplasmons in the presence of a perpendicular magnetic field, we investigate the dynamical dielectric response function of graphene in contact with a substrate using the random phase approximation. We add a periodically modulated magnetic field within the graphene plane and address both the inter and intra Landau band magnetoplasmons. Verification of the predicted magnetic modulation effects is possible by experiments analogous to those for the zero gap limit. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA.

Quantum field theory of photon—Dirac fermion interacting system in graphene monolayer

International Nuclear Information System (INIS)

Nguyen, Bich Ha; Nguyen, Van Hieu

2016-01-01

The purpose of the present work is to elaborate quantum field theory of interacting systems comprising Dirac fermion fields in a graphene monolayer and the electromagnetic field. Since the Dirac fermions are confined in a two-dimensional plane, the interaction Hamiltonian of this system contains the projection of the electromagnetic field operator onto the plane of a graphene monolayer. Following the quantization procedure in traditional quantum electrodynamics we chose to work in the gauge determined by the weak Lorentz condition imposed on the state vectors of all physical states of the system. The explicit expression of the two-point Green function of the projection onto a graphene monolayer of a free electromagnetic field is derived. This two-point Green function and the expression of the interaction Hamiltonian together with the two-point Green functions of free Dirac fermion fields established in our previous work form the basics of the perturbation theory of the above-mentioned interacting field system. As an example, the perturbation theory is applied to the study of two-point Green functions of this interacting system of quantum fields. (paper)

Thermionic emission from monolayer graphene, sheath formation and its feasibility towards thermionic converters

Science.gov (United States)

Misra, Shikha; Upadhyay Kahaly, M.; Mishra, S. K.

2017-02-01

A formalism describing the thermionic emission from a single layer graphene sheet operating at a finite temperature and the consequent formation of the thermionic sheath in its proximity has been established. The formulation takes account of two dimensional densities of state configuration, Fermi-Dirac (f-d) statistics of the electron energy distribution, Fowler's treatment of electron emission, and Poisson's equation. The thermionic current estimates based on the present analysis is found to be in reasonably good agreement with experimental observations (Zhu et al., Nano Res. 07, 1 (2014)). The analysis has further been simplified for the case where f-d statistics of an electron energy distribution converges to Maxwellian distribution. By using this formulation, the steady state sheath features, viz., spatial dependence of the surface potential and electron density structure in the thermionic sheath are derived and illustrated graphically for graphene parameters; the electron density in the sheath is seen to diminish within ˜10 s of Debye lengths. By utilizing the graphene based cathode in configuring a thermionic converter (TC), an appropriate operating regime in achieving the efficient energy conversion has been identified. A TC configured with the graphene based cathode (operating at ˜1200 K/work function 4.74 V) along with the metallic anode (operating at ˜400 K/ work function 2.0 V) is predicted to display ˜56% of the input thermal flux into the electrical energy, which infers approximately ˜84% of the Carnot efficiency.

Enhanced energy transfer by near-field coupling of a nanostructured metamaterial with a graphene-covered plate

International Nuclear Information System (INIS)

Chang, Jui-Yung; Yang, Yue; Wang, Liping

2016-01-01

Coupled surface plasmon/phonon polaritons and hyperbolic modes are known to enhance radiative transfer across nanometer vacuum gaps but usually require identical materials. It becomes crucial to achieve strong near-field energy transfer between dissimilar materials for applications like near-field thermophotovoltaic and thermal rectification. In this work, we theoretically demonstrate enhanced near-field radiative transfer between a nanostructured metamaterial emitter and a graphene-covered planar receiver. Strong near-field coupling with two orders of magnitude enhancement in the spectral heat flux is achieved at the gap distance of 20 nm. By carefully selecting the graphene chemical potential and doping levels of silicon nanohole emitter and silicon plate receiver, the total near-field radiative heat flux can reach about 500 times higher than the far-field blackbody limit between 400 K and 300 K. The physical mechanism is elucidated by the near-field surface plasmon coupling with fluctuational electrodynamics and dispersion relations. The effects of graphene chemical potential, emitter and receiver doping levels, and vacuum gap distance on the near-field coupling and radiative energy transfer are analyzed in detail. - Highlights: • Near-field radiative transfer between a metamaterial and a graphene-covered plate is studied. • Effective medium theory with uniaxial optics is employed to model nanohole metamaterials. • Enhancement by 2 orders is found between dissimilar materials with graphene coating. • Extraordinary coupling of the nanostructured emitter with graphene is elucidated. • Effects of doping level of silicon and graphene chemical potential are investigated.

Nonlinear properties of gated graphene in a strong electromagnetic field

Energy Technology Data Exchange (ETDEWEB)

Avetisyan, A. A., E-mail: artakav@ysu.am; Djotyan, A. P., E-mail: adjotyan@ysu.am [Yerevan State University, Department of Physics (Armenia); Moulopoulos, K., E-mail: cos@ucy.ac.cy [University of Cyprus, Department of Physics (Cyprus)

2017-03-15

We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an intense laser field. We show that adiabatically changing the gate potentials with time may produce (at resonant photon energy) a full inversion of the electron population with high density between valence and conduction bands. In the linear regime, excitonic absorption of an electromagnetic radiation in a graphene monolayer with opened energy gap is also studied.

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Science.gov (United States)

Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

2017-04-01

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

Science.gov (United States)

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

Selective self-assembly and light emission tuning of layered hybrid perovskites on patterned graphene.

Science.gov (United States)

Guerra, Valentino L P; Kovaříček, Petr; Valeš, Václav; Drogowska, Karolina; Verhagen, Tim; Vejpravova, Jana; Horák, Lukáš; Listorti, Andrea; Colella, Silvia; Kalbáč, Martin

2018-02-15

The emission of light in two-dimensional (2-D) layered hybrid organic lead halide perovskites, namely (R-NH 3 ) 2 PbX 4 , can be effectively tuned using specific building blocks for the perovskite formation. Herein this behaviour is combined with a non-covalent graphene functionalization allowing excellent selectivity and spatial resolution of the perovskite film growth, promoting the formation of hybrid 2-D perovskite : graphene heterostructures with uniform coverage of up to centimeter scale graphene sheets and arbitrary shapes down to 5 μm. Using cryo-Raman microspectroscopy, highly resolved spectra of the perovskite phases were obtained and the Raman mapping served as a convenient spatially resolved technique for monitoring the distribution of the perovskite and graphene constituents on the substrate. In addition, the stability of the perovskite phase with respect to the thermal variation was inspected in situ by X-ray diffraction. Finally, time-resolved photoluminescence characterization demonstrated that the optical properties of the perovskite films grown on graphene are not hampered. Our study thus opens the door to smart fabrication routes for (opto)-electronic devices based on 2-D perovskites in contact with graphene with complex architectures.

Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

Energy Technology Data Exchange (ETDEWEB)

Ummethala, Raghunandan; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Wenger, Daniela; Tedde, Sandro F. [Siemens Healthcare GmbH, Technology Centre, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria)

2016-01-28

Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

Science.gov (United States)

Ummethala, Raghunandan; Wenger, Daniela; Tedde, Sandro F.; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd; Eckert, Jürgen

2016-01-01

Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2013-12-01

Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

Localization of Dirac-like excitations in graphene in the presence of smooth inhomogeneous magnetic fields.

Science.gov (United States)

Roy, Pratim; Ghosh, Tarun Kanti; Bhattacharya, Kaushik

2012-02-08

The present paper discusses magnetic confinement of the Dirac excitations in graphene in the presence of inhomogeneous magnetic fields. In the first case a magnetic field directed along the z axis whose magnitude is proportional to 1/r is chosen. In the next case we choose a more realistic magnetic field which does not blow up at the origin and gradually fades away from the origin. The magnetic fields chosen do not have any finite/infinite discontinuity for finite values of the radial coordinate. The novelty of the two magnetic fields is related to the equations which are used to find the excited spectra of the excitations. It turns out that the bound state solutions of the two-dimensional hydrogen atom problem are related to the spectra of graphene excitations in the presence of the 1/r (inverse-radial) magnetic field. For the other magnetic field profile one can use the knowledge of the bound state spectrum of a two-dimensional cutoff Coulomb potential to dictate the excitation spectra of graphene. The spectrum of the graphene excitations in the presence of the inverse-radial magnetic field can be exactly solved while the other case cannot be. In the later case we give the localized solutions of the zero-energy states in graphene.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

International Nuclear Information System (INIS)

Bartolomeo, Antonio Di; Romeo, Francesco; Sabatino, Paolo; Carapella, Giovanni; Iemmo, Laura; Giubileo, Filippo; Schroeder, Thomas; Lupina, Grzegorz

2015-01-01

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10 −4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface. (paper)

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

OpenAIRE

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

2015-01-01

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is ...

Interference Processes During Reradiation of Attosecond Pulses of Electromagnetic Field by Graphene

Science.gov (United States)

Makarov, D. N.; Matveev, V. I.; Makarova, K. A.

2018-05-01

Interference spectra during reradiation of attosecond pulses of electromagnetic field by graphene sheets are considered. Analytical expressions for calculations of spectral distributions are derived. As an example, the interference spectra of a graphene sheet and a flat rectangular lattice are compared.

Highly air stable passivation of graphene based field effect devices.

Science.gov (United States)

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

RNA Detection Based on Graphene Field-Effect Transistor Biosensor

Directory of Open Access Journals (Sweden)

Meng Tian

2018-01-01

Full Text Available Graphene has attracted much attention in biosensing applications due to its unique properties. In this paper, the monolayer graphene was grown by chemical vapor deposition (CVD method. Using the graphene as the electric channel, we have fabricated a graphene field-effect transistor (G-FET biosensor that can be used for label-free detection of RNA. Compared with conventional method, the G-FET RNA biosensor can be run in low cost, be time-saving, and be miniaturized for RNA measurement. The sensors show high performance and achieve the RNA detection sensitivity as low as 0.1 fM, which is two orders of magnitude lower than the previously reports. Moreover, the G-FET biosensor can readily distinguish target RNA from noncomplementary RNA, showing high selectivity for RNA detection. The developed G-FET RNA biosensor with high sensitivity, fast analysis speed, and simple operation may provide a new feasible direction for RNA research and biosensing.

Casimir friction and near-field radiative heat transfer in graphene structures

Energy Technology Data Exchange (ETDEWEB)

Volokitin, A.I. [Forschungszentrum Juelich (Germany). Peter Gruenberg Inst.; Samara State Technical Univ. (Russian Federation). Physical Dept.

2017-05-01

The dependence of the Casimir friction force between a graphene sheet and a (amorphous) SiO{sub 2} substrate on the drift velocity of the electrons in the graphene sheet is studied. It is shown that the Casimir friction is strongly enhanced for the drift velocity above the threshold velocity when the friction is determined by the resonant excitation of the surface phonon-polaritons in the SiO{sub 2} substrate and the electron-hole pairs in graphene. The theory agrees well with the experimental data for the current-voltage dependence for unsuspended graphene on the SiO{sub 2} substrate. The theories of the Casimir friction and the near-field radiative energy transfer are used to study the heat generation and dissipation in graphene due to the interaction with phonon-polaritons in the (amorphous) SiO{sub 2} substrate and acoustic phonons in graphene. For suspended graphene, the energy transfer coefficient at nanoscale gap is ∝ three orders of magnitude larger than the radiative heat transfer coefficient of the blackbody radiation limit.

Casimir friction and near-field radiative heat transfer in graphene structures

International Nuclear Information System (INIS)

Volokitin, A.I.; Samara State Technical Univ.

2017-01-01

The dependence of the Casimir friction force between a graphene sheet and a (amorphous) SiO 2 substrate on the drift velocity of the electrons in the graphene sheet is studied. It is shown that the Casimir friction is strongly enhanced for the drift velocity above the threshold velocity when the friction is determined by the resonant excitation of the surface phonon-polaritons in the SiO 2 substrate and the electron-hole pairs in graphene. The theory agrees well with the experimental data for the current-voltage dependence for unsuspended graphene on the SiO 2 substrate. The theories of the Casimir friction and the near-field radiative energy transfer are used to study the heat generation and dissipation in graphene due to the interaction with phonon-polaritons in the (amorphous) SiO 2 substrate and acoustic phonons in graphene. For suspended graphene, the energy transfer coefficient at nanoscale gap is ∝ three orders of magnitude larger than the radiative heat transfer coefficient of the blackbody radiation limit.

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

Institute of Scientific and Technical Information of China (English)

Lin Xin; Wang Hai-Long; Pan Hui; Xu Huai-Zhe

2011-01-01

The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.

Field electron emission spectrometer combined with field ion/electron microscope as a field emission laboratory

International Nuclear Information System (INIS)

Shkuratov, S.I.; Ivanov, S.N.; Shilimanov, S.N.

1996-01-01

The facility, combining the field ion microscope, field electron emission microscope and field electron emission spectrometer, is described. Combination of three methodologies makes it possible to carry out the complete cycle of emission studies. Atom-plane and clean surface of the studied samples is prepared by means of field evaporation of the material atom layers without any thermal and radiation impact. This enables the study of atom and electron structure of clean surface of the wide range materials, the study whereof through the field emission methods was previously rather difficult. The temperature of the samples under study changes from 75 up to 2500 K. The energy resolution of the electron analyzer equals 30 MeV. 19 refs., 10 figs

Doping enhanced barrier lowering in graphene-silicon junctions

Science.gov (United States)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

Field effect in the quantum Hall regime of a high mobility graphene wire

Energy Technology Data Exchange (ETDEWEB)

Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2014-08-21

In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

Fabrication and characterization on reduced graphene oxide field effect transistor (RGOFET) based biosensor

Energy Technology Data Exchange (ETDEWEB)

Rashid, A. Diyana [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Ruslinda, A. Rahim, E-mail: ruslinda@unimap.edu.my; Fatin, M. F. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia); Hashim, U.; Arshad, M. K. [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia)

2016-07-06

The fabrication and characterization on reduced graphene oxide field effect transistor (RGO-FET) were demonstrated using a spray deposition method for biological sensing device purpose. A spray method is a fast, low-cost and simple technique to deposit graphene and the most promising technology due to ideal coating on variety of substrates and high production speed. The fabrication method was demonstrated for developing a label free aptamer reduced graphene oxide field effect transistor biosensor. Reduced graphene oxide (RGO) was obtained by heating on hot plate fixed at various temperatures of 100, 200 and 300°C, respectively. The surface morphology of RGO were examined via atomic force microscopy to observed the temperature effect of produced RGO. The electrical measurement verify the performance of electrical conducting RGO-FET at temperature 300°C is better as compared to other temperature due to the removal of oxygen groups in GO. Thus, reduced graphene oxide was a promising material for biosensor application.

Performance of Solution Processed Carbon Nanotube Field Effect Transistors with Graphene Electrodes

OpenAIRE

Gangavarapu, P R Yasasvi; Lokesh, Punith Chikkahalli; Bhat, K N; Naik, A K

2016-01-01

This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition,...

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Science.gov (United States)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

Strain-Induced Pseudo--Magnetic Fields in Graphene: MegaGauss in Nanobubbles

Science.gov (United States)

Levy, Niv

2011-03-01

Recent theoretical proposals suggest that strain can be used to modify graphene electronic states through the creation of a pseudo--magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C3v). Scanning tunneling microscopy shows that graphene grown on a platinum (111) surface forms nanobubbles, which are highly strained due to thermal expansion mismatch between the film and the substrate. We find that scanning tunneling spectroscopy measurements of these nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo--magnetic fields greater than 300 Tesla. This demonstration of enormous pseudo--magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called ``strain engineering''. In collaboration with S. A. Burke ,2 , K. L. Meaker 2 , M. Panlasigui 2 , A. Zettl 2,3 , F. Guinea 4 , A. H. Castro Neto 5 and M. F. Crommie 2,3 . 1. Present address: Department of Physics and Astronomy and Department of Chemistry, University of British Columbia, Vancouver, BC V6T 121, Canada. 2. Department of Physics, University of California, Berkeley, CA 94720, USA. 3. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. 4. Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid 28049, Spain. 5. Department of Physics, Boston University, Boston, MA 02215, USA.

Growth of graphene underlayers by chemical vapor deposition

International Nuclear Information System (INIS)

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

2013-01-01

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth

The role of contact resistance in graphene field-effect devices

Science.gov (United States)

Giubileo, Filippo; Di Bartolomeo, Antonio

2017-08-01

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

International Nuclear Information System (INIS)

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

2015-01-01

We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications

Graphene on graphene antidot lattices

DEFF Research Database (Denmark)

Gregersen, Søren Schou; Pedersen, Jesper Goor; Power, Stephen

2015-01-01

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure......, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing...

Temperature-dependent of Nonlinear Optical Conductance of Graphene-based Systems in High-intensity Terahertz Field

Institute of Scientific and Technical Information of China (English)

Jing Lv; Rui-yang Yuan; Hui Yan

2014-01-01

For multi-photon processed with the linear dispersion in the high-intensity terahertz(THz) field,we have systematically investigated the temperature-dependent nonlinear optical response of graphene-based systems, including single layer graphene, graphene superlattice and gapped graphene. In the intrinsic single layer graphene system, it demonstrates that, at low temperature, nonlinear optical conductivities of the thirdand fifth-order are respectively five and ten orders of magnitude larger than the universal conductivity with high-intensity and low frequency THz wave.In the graphene superlattice and gapped graphene systems, the optical responses enhanced because of the anisotropic massless and massive Dirac fermions.

Adsorption of gas molecules on Ga-doped graphene and effect of applied electric field: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Liang, Xiong-Yi [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ding, Ning [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Key Laboratory for Applied Technology of Sophisticated Analytical Instruments, Shandong Academy of Sciences, Jinan 250014 (China); Ng, Siu-Pang [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Wu, Chi-Man Lawrence, E-mail: lawrence.wu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Key Laboratory for Applied Technology of Sophisticated Analytical Instruments, Shandong Academy of Sciences, Jinan 250014 (China)

2017-07-31

Highlights: • H{sub 2}O, NH{sub 3}, CO, NO{sub 2} and NO are physically adsorbed on pristine graphene. • The adsorption energies of all gas molecules on graphene are increased after doping with Ga. • NO{sub 2} shows the strongest affinity to Ga-doped graphene. • The electronic properties and adsorption of NO{sub 2} on graphene and can be effectively tuned using an external electric field. - Abstract: Density functional theory calculations have been carried out to study the adsorption of varous gas molecules (H{sub 2}O, NH{sub 3}, CO, NO{sub 2} and NO) on pristine graphene and Ga-doped graphene in order to explore the feasibility of Ga-doped graphene based gas sensor. For each gas molecule, various adsorption positions and orientations were considered. The most stable configuration was determined and the adsorption energies with van der Waals interactions were calculated. Further, electronic properties such as electron density, density of states, charge transfer and band structure were investigated to understand the mechanism of adsorption. The results showed that the gas molecules studied were only weakly adsorbed on pristine graphene with small adsorption energies. On the other hand, the adsorption energies of all gas molecules on Ga-doped graphene increased by various amounts. Adsorption of gas molecules on Ga-doped graphene can open a relatively large band gap ranging from 0.267 to 0.397 eV. NO{sub 2} was found to be very sensitive to Ga-doped graphene with adsorption energy of −1.928 eV due to strong orbital hybridization and large charge transfer. Furthermore, our study suggests that the affinity and electronic properties of NO{sub 2} on Ga-doped graphene can be dramatically changed by an external electric field. A negative electric field enhances the adsorption of NO{sub 2} on Ga-doped graphene as reflected in the increase in adsorption energy. In contrast, the interaction will be weakened under a positive electric field. The results of the DFT

Adsorption of gas molecules on Ga-doped graphene and effect of applied electric field: A DFT study

International Nuclear Information System (INIS)

Liang, Xiong-Yi; Ding, Ning; Ng, Siu-Pang; Wu, Chi-Man Lawrence

2017-01-01

Highlights: • H_2O, NH_3, CO, NO_2 and NO are physically adsorbed on pristine graphene. • The adsorption energies of all gas molecules on graphene are increased after doping with Ga. • NO_2 shows the strongest affinity to Ga-doped graphene. • The electronic properties and adsorption of NO_2 on graphene and can be effectively tuned using an external electric field. - Abstract: Density functional theory calculations have been carried out to study the adsorption of varous gas molecules (H_2O, NH_3, CO, NO_2 and NO) on pristine graphene and Ga-doped graphene in order to explore the feasibility of Ga-doped graphene based gas sensor. For each gas molecule, various adsorption positions and orientations were considered. The most stable configuration was determined and the adsorption energies with van der Waals interactions were calculated. Further, electronic properties such as electron density, density of states, charge transfer and band structure were investigated to understand the mechanism of adsorption. The results showed that the gas molecules studied were only weakly adsorbed on pristine graphene with small adsorption energies. On the other hand, the adsorption energies of all gas molecules on Ga-doped graphene increased by various amounts. Adsorption of gas molecules on Ga-doped graphene can open a relatively large band gap ranging from 0.267 to 0.397 eV. NO_2 was found to be very sensitive to Ga-doped graphene with adsorption energy of −1.928 eV due to strong orbital hybridization and large charge transfer. Furthermore, our study suggests that the affinity and electronic properties of NO_2 on Ga-doped graphene can be dramatically changed by an external electric field. A negative electric field enhances the adsorption of NO_2 on Ga-doped graphene as reflected in the increase in adsorption energy. In contrast, the interaction will be weakened under a positive electric field. The results of the DFT calculation indicates the potential application of Ga

Passivation and Depassivation of Defects in Graphene-based field-effect transistors

Science.gov (United States)

O'Hara, Andrew; Wang, Pan; Perini, Chris J.; Fleetwood, Daniel M.; Vogel, Eric M.; Pantelides, Sokrates T.

Field effect transistors based on graphene on amorphous SiO2 substrates were fabricated, both with and without a top oxide passivation layer of Al2O3. Initial I-V characteristics of these devices show that the Fermi energy occurs below the Dirac point in graphene (i.e. p-type behavior). Introduction of environmental stresses, e.g. baking the devices, causes a shift in the Fermi energy relative to the Dirac point. 1/f noise measurements indicate the presence of charge trapping defects. In order to find the origins of this behavior, we construct atomistic models of the substrate/graphene interface and the graphene/oxide passivation layer interface. Using density functional theory, we investigate the role that the introduction and removal of hydrogen and hydroxide passivants has on the electronic structure of the graphene layer as well as the relative energetics for these processes to occur in order to gain insights into the experimental results. Supported by DTRA: 1-16-0032 and NSF: ECCS-1508898.

Measuring strain and rotation fields at the dislocation core in graphene

Science.gov (United States)

Bonilla, L. L.; Carpio, A.; Gong, C.; Warner, J. H.

2015-10-01

Strain fields, dislocations, and defects may be used to control electronic properties of graphene. By using advanced imaging techniques with high-resolution transmission electron microscopes, we have measured the strain and rotation fields about dislocations in monolayer graphene with single-atom sensitivity. These fields differ qualitatively from those given by conventional linear elasticity. However, atom positions calculated from two-dimensional (2D) discrete elasticity and three-dimensional discrete periodized Föppl-von Kármán equations (dpFvKEs) yield fields close to experiments when determined by geometric phase analysis. 2D theories produce symmetric fields whereas those from experiments exhibit asymmetries. Numerical solutions of dpFvKEs provide strain and rotation fields of dislocation dipoles and pairs that also exhibit asymmetries and, compared with experiments, may yield information on out-of-plane displacements of atoms. While discrete theories need to be solved numerically, analytical formulas for strains and rotation about dislocations can be obtained from 2D Mindlin's hyperstress theory. These formulas are very useful for fitting experimental data and provide a template to ascertain the importance of nonlinear and nonplanar effects. Measuring the parameters of this theory, we find two characteristic lengths between three and four times the lattice spacings that control dilatation and rotation about a dislocation. At larger distances from the dislocation core, the elastic fields decay to those of conventional elasticity. Our results may be relevant for strain engineering in graphene and other 2D materials of current interest.

Double Barriers and Magnetic Field in Bilayer Graphene

Science.gov (United States)

Redouani, Ilham; Jellal, Ahmed; Bahlouli, Hocine

2015-12-01

We study the transmission probability in an AB-stacked bilayer graphene of Dirac fermions scattered by a double-barrier structure in the presence of a magnetic field. We take into account the full four bands structure of the energy spectrum and use the suitable boundary conditions to determine the transmission probability. Our numerical results show that for energies higher than the interlayer coupling, four ways for transmission are possible while for energies less than the height of the barrier, Dirac fermions exhibit transmission resonances and only one transmission channel is available. We show that, for AB-stacked bilayer graphene, there is no Klein tunneling at normal incidence. We find that the transmission displays sharp peaks inside the transmission gap around the Dirac point within the barrier regions while they are absent around the Dirac point in the well region. The effect of the magnetic field, interlayer electrostatic potential, and various barrier geometry parameters on the transmission probabilities is also discussed.

Energy spectrum and density of states for a graphene quantum dot in a magnetic field

International Nuclear Information System (INIS)

Morgenstern Horing, Norman J; Liu, S Y

2010-01-01

In this paper, we determine the spectrum and density of states of a graphene quantum dot in a normal quantizing magnetic field. To accomplish this, we employ the retarded Green function for a magnetized, infinite-sheet graphene layer to describe the dynamics of a tightly confined graphene quantum dot subject to Landau quantization. Considering a δ (2) (r) potential well that supports just one subband state in the well in the absence of a magnetic field, the effect of Landau quantization is to 'splinter' this single energy level into a proliferation of many Landau-quantized states within the well. Treating the graphene sheet and dot as a closed system subject to a fully Hermitian Hamiltonian (including boundary conditions), there is no indication of decay of the Landau-quantized graphene dot states into the quantized states of the host graphene sheet for 'tight' confinement by the δ (2) (r) potential well, notwithstanding extension of the dot Green function (and eigenfunctions) outside the δ (2) (r) potential well.

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

International Nuclear Information System (INIS)

Chowdhury, Sk. Fahad; Sonde, Sushant; Rahimi, Somayyeh; Tao, Li; Banerjee, Sanjay; Akinwande, Deji

2014-01-01

We report the improvement of the electrical characteristics of graphene field-effect transistors (FETs) by hexamethyldisilazane (HMDS) treatment. Both electron and hole field-effect mobilities are increased by 1.5 × –2×, accompanied by effective residual carrier concentration reduction. Dirac point also moves closer to zero Volt. Time evolution of mobility data shows that mobility improvement saturates after a few hours of HMDS treatment. Temperature-dependent transport measurements show small mobility variation between 77 K and room temperature (295 K) before HMDS application. But mobility at 77 K is almost 2 times higher than mobility at 295 K after HMDS application, indicating reduced carrier scattering. Performance improvement is also observed for FETs made on hydrophobic substrate–an HMDS-graphene-HMDS sandwich structure. Raman spectroscopic analysis shows that G peak width is increased, G peak position is down shifted, and intensity ratio between 2D and G peaks is increased after HMDS application. We attribute the improvements in electronic transport mainly to enhanced screening and mitigation of adsorbed impurities from graphene surface upon HMDS treatment.

Field emission electronics

CERN Document Server

Egorov, Nikolay

2017-01-01

This book is dedicated to field emission electronics, a promising field at the interface between “classic” vacuum electronics and nanotechnology. In addition to theoretical models, it includes detailed descriptions of experimental and research techniques and production technologies for different types of field emitters based on various construction principles. It particularly focuses on research into and production of field cathodes and electron guns using recently developed nanomaterials and carbon nanotubes. Further, it discusses the applications of field emission cathodes in new technologies such as light sources, flat screens, microwave and X-ray devices.

Graphene Channel Liquid Container Field Effect Transistor as ph Sensor

International Nuclear Information System (INIS)

Li, X.; Shi, J.; Pang, J.; Liu, W.; Wang, X.; Liu, H.

2014-01-01

Graphene channel liquid container field effect transistor ph sensor with interdigital micro trench for liquid ion testing is presented. Growth morphology and ph sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on ph value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the ph value is between 7 and 8, while sensitivity of FLG is 4.75% when the Ph=6. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

Morphology-controlled synthesis of grass-like GO-CdSe nanocomposites with excellent optical properties and field emission properties

Energy Technology Data Exchange (ETDEWEB)

Xie, Pei, E-mail: peipeixie@163.com [College of Science, Donghua University, Shanghai 201620 (China); Xue, Shaolin, E-mail: slxue@dhu.edu.cn [College of Science, Donghua University, Shanghai 201620 (China); Wei, Jia, E-mail: Jojo.1125@hotmail.com [College of Science, Donghua University, Shanghai 201620 (China); Han, Junwei, E-mail: hjw0323@sina.com [College of Science, Donghua University, Shanghai 201620 (China); Zhou, Weikang, E-mail: dhuzwk@sina.com [College of Science, Donghua University, Shanghai 201620 (China); Zou, Rujia, E-mail: rujiazou@dhu.edu.cn [College of Science, Donghua University, Shanghai 201620 (China); State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620 (China)

2016-02-15

Four different morphologies of the CdSe semiconductor nanograss have been successfully grown on graphene oxide (GO) sheets via hydrothermal method at 220 °C for 12 h. The morphologies, structures, chemical compositions and optical properties of the as-obtained GO-CdSe nanocomposites were characterized by XRD, SEM, TEM, EDS, XPS and Raman spectra. It was found that the EDTA/Cd{sup 2+} molar ratio is important for the formation of morphology of GO-CdSe nanocomposites. The results of XRD revealed that all the as-obtained GO-CdSe nanocomposites have zinc blend structure. Room temperature photoluminescence (PL) showed that the sample emits red light under different excitation wavelengths. The results of Raman spectra, EDS and XPS showed that the CdSe nanograss is grown on GO sheets. The results showed that GO-CdSe nanocomposites composed of nanorods have best field emission (FE) properties with a low turn-on electric field of 4.14 V μm{sup −1} and a high field enhancement factor of 3315 among all the samples. - Graphical abstract: SEM images of as-synthesized CdSe nanograss grown on GO sheets. Room temperature PL emission spectra of the as-synthesized CdSe nanograss grown on GO sheets. Field emission J–E curve of the as-synthesized CdSe nanograss grown on GO sheets. - Highlights: • Novel CdSe nanograsses are grown on graphene oxide sheets by hydrothermal method. • The morphology of CdSe nanograsses is controlled by adjusting EDTA/Cd{sup 2+} molar ratio. • The FE performance of sample is investigated. • Optimum morphology for FE performance is CdSe nanograsses composed of nanorods on GO.

Ballistic charge carrier transmission through graphene multi-barrier structures in uniform magnetic field

International Nuclear Information System (INIS)

Zubarev, A; Dragoman, D

2014-01-01

We investigate charge carrier transport in graphene multi-barrier structures placed in a uniform magnetic field. The transmission coefficient is found analytically by generalizing the transfer matrix method for the case of graphene regions subjected to a uniform magnetic field. The transmission coefficient through the structure can be modulated by varying the gate voltages, the magnetic field and/or the width of the gated regions. Such a configuration could be used in multiple-valued logic circuits, since it has several output states with discrete and easily selectable transmission/current values. (paper)

Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

Directory of Open Access Journals (Sweden)

Mengchen Huang

2015-06-01

Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

Graphene field-effect transistor application for flow sensing

Directory of Open Access Journals (Sweden)

Łuszczek Maciej

2017-01-01

Full Text Available Microflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall flow sensor performance. In this work we propose graphene field-effect transistor (GFET to be used as microflow sensor. Temperature distribution in graphene channel was simulated and the analysis of heat convection was performed to establish the relation between the fluidic flow velocity and the temperature gradient. It was shown that the negative temperature coefficient (NTC of graphene could enable the self-protection of the device and should minimize sensing error from currentinduced heating. It was also argued that the planar design of the GFET sensor makes it suitable for the real application due to supposed mechanical stability of such a construction.

Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

KAUST Repository

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced

Controlling graphene plasmons with a zero-index metasurface.

Science.gov (United States)

Lin, Lihui; Lu, Yanxin; Yuan, Mengmeng; Shi, Fenghua; Xu, Haixia; Chen, Yihang

2017-11-30

Graphene plasmons, owing to their diverse applications including electro-optical modulation, optical sensing, spectral photometry and tunable lighting at the nanoscale, have recently attracted much attention. One key challenge in advancing this field is to precisely control the propagation of graphene plasmons. Here, we propose an on-chip integrated platform to engineer the wave front of the graphene plasmons through a metasurface with a refractive index of zero. We demonstrate that a well-designed graphene/photonic-crystal metasurface can possess conical plasmonic dispersion at the Brillouin zone center with a triply degenerate state at the Dirac frequency, giving rise to the zero-effective-index of graphene plasmons. Plane-wave-emission and focusing effects of the graphene plasmons are achieved by tailoring such a zero-index metasurface. In addition to the tunable Dirac point frequency enabled by the electrical tuning of the graphene Fermi level, our highly integrated system also provides stable performance even when defects exist. This actively controllable on-chip platform can potentially be useful for integrated photonic circuits and devices.

Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

Science.gov (United States)

Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Munoz, Nini; Schutter, Brian; Spencer, Michael G

2014-08-13

The electrical properties of multilayer MoS2/graphene heterojunction transistors are investigated. Temperature-dependent I-V measurements indicate the concentration of unintentional donors in exfoliated MoS2 to be 3.57 × 10(11) cm(-2), while the ionized donor concentration is determined as 3.61 × 10(10) cm(-2). The temperature-dependent measurements also reveal two dominant donor levels, one at 0.27 eV below the conduction band and another located at 0.05 eV below the conduction band. The I-V characteristics are asymmetric with drain bias voltage and dependent on the junction used for the source or drain contact. I-V characteristics of the device are consistent with a long channel one-dimensional field-effect transistor model with Schottky contact. Utilizing devices, which have both graphene/MoS2 and Ti/MoS2 contacts, the Schottky barrier heights of both interfaces are measured. The charge transport mechanism in both junctions was determined to be either thermionic-field emission or field emission depending on bias voltage and temperature. On the basis of a thermionic field emission model, the barrier height at the graphene/MoS2 interface was determined to be 0.23 eV, while the barrier height at the Ti/MoS2 interface was 0.40 eV. The value of Ti/MoS2 barrier is higher than previously reported values, which did not include the effects of thermionic field emission.

Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

Science.gov (United States)

Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

2016-01-28

Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

Use of Kelvin probe force microscopy for identification of CVD grown graphene flakes on copper foil

Science.gov (United States)

Kumar, Rakesh; Mehta, B. R.; Kanjilal, D.

2017-05-01

Graphene flakes have been grown by chemical vapour deposition (CVD) method on Cu foils. The obtained graphene flakes have been characterized by optical microscopy, field emission scanning electron microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy. The graphene flakes grown on Cu foil comprise mainly single layer graphene and confirm that the nucleation for graphene growth starts very quickly. Moreover, KPFM has been found to be a valuable technique to differentiate between covered and uncovered portion of Cu foil by graphene flakes deposited for shorter duration. The results show that KPFM can be a very useful technique in understanding the mechanism of graphene growth.

Energy minibands degeneration induced by magnetic field effects in graphene superlattices

Science.gov (United States)

Reyes-Villagrana, R. A.; Carrera-Escobedo, V. H.; Suárez-López, J. R.; Madrigal-Melchor, J.; Rodríguez-Vargas, I.

2017-12-01

Energy minibands are a basic feature of practically any superlattice. In this regard graphene superlattices are not the exception and recently miniband transport has been reported through magneto-transport measurements. In this work, we compute the energy miniband and transport characteristics for graphene superlattices in which the energy barriers are generated by magnetic and electric fields. The transfer matrix approach and the Landauer-Büttiker formalism have been implemented to calculate the energy minibands and the linear-regime conductance. We find that energy minibands are very sensitive to the magnetic field and become degenerate by rising it. We were also able to correlate the evolution of the energy minibands as a function of the magnetic field with the transport characteristics, finding that miniband transport can be destroyed by magnetic field effects. Here, it is important to remark that although magnetic field effects have been a key element to unveil miniband transport, they can also destroy it.

Electronic properties of BN-doped bilayer graphene and graphyne in the presence of electric field

Science.gov (United States)

Majidi, R.; Karami, A. R.

2013-11-01

In the present paper, we have used density functional theory to study electronic properties of bilayer graphene and graphyne doped with B and N impurities in the presence of electric field. It has been demonstrated that a band gap is opened in the band structures of the bilayer graphene and graphyne by B and N doping. We have also investigated influence of electric field on the electronic properties of BN-doped bilayer graphene and graphyne. It is found that the band gaps induced by B and N impurities are increased by applying electric field. Our results reveal that doping with B and N, and applying electric field are an effective method to open and control a band gap which is useful to design carbon-based next-generation electronic devices.

Comparison of mobility extraction methods based on field-effect measurements for graphene

Directory of Open Access Journals (Sweden)

Hua Zhong

2015-05-01

Full Text Available Carrier mobility extraction methods for graphene based on field-effect measurements are explored and compared according to theoretical analysis and experimental results. A group of graphene devices with different channel lengths were fabricated and measured, and carrier mobility is extracted from those electrical transfer curves using three different methods. Accuracy and applicability of those methods were compared. Transfer length method (TLM can obtain accurate density dependent mobility and contact resistance at relative high carrier density based on data from a group of devices, and then can act as a standard method to verify other methods. As two of the most popular methods, direct transconductance method (DTM and fitting method (FTM can extract mobility easily based on transfer curve of a sole graphene device. DTM offers an underestimated mobility at any carrier density owing to the neglect of contact resistances, and the accuracy can be improved through fabricating field-effect transistors with long channel and good contacts. FTM assumes a constant mobility independent on carrier density, and then can obtain mobility, contact resistance and residual density stimulations through fitting a transfer curve. However, FTM tends to obtain a mobility value near Dirac point and then overestimates carrier mobility of graphene. Comparing with the DTM and FTM, TLM could offer a much more accurate and carrier density dependent mobility, that reflects the complete properties of graphene carrier mobility.

Field emission in RF cavities

International Nuclear Information System (INIS)

Bonin, B.

1996-01-01

Electron field emission limits the accelerating gradient in superconducting cavities. It is shown how and why it is an important problem. The phenomenology of field emission is then described, both in DC and RF regimes. Merits of a few plausible 'remedies' to field emission are discussed. (author)

Slowing hot-carrier relaxation in graphene using a magnetic field

Science.gov (United States)

Plochocka, P.; Kossacki, P.; Golnik, A.; Kazimierczuk, T.; Berger, C.; de Heer, W. A.; Potemski, M.

2009-12-01

A degenerate pump-probe technique is used to investigate the nonequilibrium carrier dynamics in multilayer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation (˜50fs) of the carriers after the initial effect of phase-space filling followed by a slower relaxation (˜4ps) due to thermalization. Both relaxation processes are less efficient when a magnetic field is applied at low temperatures which is attributed to the suppression of the electron-electron Auger scattering due to the nonequidistant Landau-level spacing of the Dirac fermions in graphene.

Proposal for a magnetic field induced graphene dot

International Nuclear Information System (INIS)

Maksym, P A; Roy, M; Craciun, M F; Russo, S; Yamamoto, M; Tarucha, S; Aoki, H

2010-01-01

Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth ΔV relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than -ΔV relative to the asymptotic potential. Consequently, when ΔV is chosen to be about half of the gap between the zeroth and first Landau levels, the dot states are isolated energetically in the gap between Landau level 0 and Landau level -1. This is confirmed with numerical calculations of the magnetic field dependent energy spectrum and the quantum states. Remarkably, an antidot formed by reversing the sign of ΔV also confines electrons but in the energy region between Landau level 0 and Landau level +1. This unusual behaviour gives an unambiguous signal of the novel physics of graphene quantum dots.

Relating hysteresis and electrochemistry in graphene field effect transistors

NARCIS (Netherlands)

Veligura, Alina; Zomer, Paul J.; Vera-Marun, Ivan J.; Jozsa, Csaba; Gordiichuk, Pavlo I.; van Wees, Bart J.

2011-01-01

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FETs) have been discussed in reports over the last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer

Graphene as a local probe to investigate near-field properties of plasmonic nanostructures

Science.gov (United States)

Wasserroth, Sören; Bisswanger, Timo; Mueller, Niclas S.; Kusch, Patryk; Heeg, Sebastian; Clark, Nick; Schedin, Fredrik; Gorbachev, Roman; Reich, Stephanie

2018-04-01

Light interacting with metallic nanoparticles creates a strongly localized near-field around the particle that enhances inelastic light scattering by several orders of magnitude. Surface-enhanced Raman scattering describes the enhancement of the Raman intensity by plasmonic nanoparticles. We present an extensive Raman characterization of a plasmonic gold nanodimer covered with graphene. Its two-dimensional nature and energy-independent optical properties make graphene an excellent material for investigating local electromagnetic near-fields. We show the localization of the near-field of the plasmonic dimer by spatial Raman measurements. Energy- and polarization-dependent measurements reveal the local near-field resonance of the plasmonic system. To investigate the far-field resonance we perform dark-field spectroscopy and find that near-field and far-field resonance energies differ by 170 meV, much more than expected from the model of a damped oscillator (40 meV).

Magnetoplasmons in gapped graphene in a periodically modulated magnetic field

KAUST Repository

Tahir, Muhammad; Schwingenschlö gl, Udo

2016-01-01

Motivated by recent experiments on long-lived magnetoplasmons in the presence of a perpendicular magnetic field, we investigate the dynamical dielectric response function of graphene in contact with a substrate using the random phase approximation

Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Pandey, Himadri; Kataria, Satender [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); Aguirre-Morales, Jorge-Daniel; Fregonese, Sebastien; Zimmer, Thomas [IMS Laboratory, Centre National de la Recherche Scientifique, University of Bordeaux, Talence (France); Passi, Vikram [University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany); Iannazzo, Mario; Alarcon, Eduard [Technical University of Catalonia, Department of Electronics Engineering, UPC, Barcelona (Spain); Lemme, Max C. [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany)

2017-11-15

We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Green's functions for a graphene sheet and quantum dot in a normal magnetic field

International Nuclear Information System (INIS)

Horing, Norman J Morgenstern; Liu, S Y

2009-01-01

This paper is concerned with the derivation of the retarded Green's function for a two-dimensional graphene layer in a perpendicular magnetic field in two explicit, analytic forms, which we employ in obtaining a closed-form solution for the Green's function of a tightly confined magnetized graphene quantum dot. The dot is represented by a δ (2) (r)-potential well and the system is subject to Landau quantization in the normal magnetic field

Growth, structural and plasma illumination properties of nanocrystalline diamond-decorated graphene nanoflakes

OpenAIRE

Kamatchi Jothiramalingam, Sankaran; Chang, Ting Hsun; Bikkarolla, Santosh Kumar; Roy, Susanta Sinha; Papakonstantinou, Pagona; Drijkoningen, Sien; Pobedinskas, Paulius; Van Bael, Marlies K.; Tai, Nyan-Hwa; Lin, I. -Nan; Haenen, Ken

2016-01-01

The improvement of the plasma illumination (PI) properties of a microplasma device due to the application of nanocrystalline diamond-decorated graphene nanoflakes (NCD-GNFs) as a cathode is investigated. The improved plasma illumination (PI) behavior is closely related to the enhanced field electron emission (FEE) properties of the NCD-GNFs. The NCD-GNFs possess better FEE characteristics with a low turn-on field of 9.36 V mu m(-1) to induce the field emission, a high FEE current density of 2...

Temp erature-dep endent of Nonlinear Optical Conductance of Graphene-based Systems in High-intensity Terahertz Field

Institute of Scientific and Technical Information of China (English)

Jing Lv; Rui-yang Yuan; Hui Yan

2014-01-01

For multi-photon processed with the linear dispersion in the high-intensity terahertz (THz) field, we have systematically investigated the temperature-dependent nonlinear optical response of graphene-based systems, including single layer graphene, graphene superlattice and gapped graphene. In the intrinsic single layer graphene system, it demonstrates that, at low temperature, nonlinear optical conductivities of the third-and fifth-order are respectively five and ten orders of magnitude larger than the universal conductivity with high-intensity and low frequency THz wave.In the graphene superlattice and gapped graphene systems, the optical responses enhanced because of the anisotropic massless and massive Dirac fermions.

Reduced graphene oxide mid-infrared photodetector at 300 K

Energy Technology Data Exchange (ETDEWEB)

Fernandes, Gustavo E.; Kim, Jin Ho; Oller, Declan; Xu, Jimmy [School of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States)

2015-09-14

We report on uncooled mid-infrared photovoltaic responses at 300 K arising in heterojunctions of reduced graphene oxide with p-Si. Two major photoresponse spectral peaks are observed, one in the near infrared starting at 1.1 μm corresponding to electron-hole pair generation in the Si substrate, and another at wavelengths below 2.5 μm, arising from properties of the reduced graphene oxide-Si heterojunction. Our analysis of the current-voltage characteristics at various temperatures suggests that the two materials form a type-II (broken-gap) heterojunction, with a characteristic transition between direct tunneling to field emission, to over-the-barrier excitation with increasing reverse voltage. Illumination was found to affect the onset of the transition between direct tunneling and field-emission, suggesting that the mid infrared response results from the excitation of minority carriers (electrons) from the Si and their collection in the reduced graphene oxide contact. The photoresponse near 1.1 μm showed a time constant at least five times faster than the one at 2.5 μm, which points to surface defects as well as high series resistance and capacitance as potentially limiting factors in this mode of operation. With proper device engineering considerations, these devices could be promising as a graphene-based platform for infrared sensing.

Large photon drag effect of intrinsic graphene induced by plasmonic evanescent field

Science.gov (United States)

Luo, Ma; Li, Zhibing

2016-12-01

A large photon drag effect of the massless Dirac fermions in intrinsic graphene is predicted for a graphene-on-plasmonic-layer system. The surface plasmons in the plasmonic layer enlarge the wave number of the photon hundreds times more than in vacuum. The evanescent field of the surface plasmons generates a directional motion of carriers in the intrinsic graphene because of the large momentum transfer from the surface plasmon to the excited carriers. A model Hamiltonian is developed on the assumption that the in-plane wavelength of the surface plasmons is much smaller than the mean free path of the carriers. The time evolution of the density matrix is solved by perturbation method as well as numerical integration. The nondiagonal density matrix elements with momentum transfer lead to a gauge current, which is an optically driven macroscopic direct current. The dependence of the macroscopic direct current on the incident direction and intensity of the laser field is studied.

Spin transport through electric field modulated graphene periodic ferromagnetic barriers

International Nuclear Information System (INIS)

Sattari, F.; Faizabadi, E.

2014-01-01

Using the transfer matrix method, the spin transmission coefficient and the spin conductivity are studied theoretically through the monolayer and bilayer graphene periodic ferromagnetic barriers modulated by a homogeneous electric field. The spin conductivity of the systems has an oscillatory behavior with respect to the external electric field which depends on the spin state of electron. In addition, the oscillation amplitude of the spin conductivity and spin polarization increase by increasing the number of barriers, but for a monolayer system with number of barriers greater than thirty, also for a bilayer system with the number of barriers greater than four, the oscillation amplitude does not change significantly. Our probes show that for bilayer system unlike monolayer structure the highest value of spin polarization achieved can be 1 or (−1). So, for designing spintronic devices, bilayer graphene is more efficient

Enhanced properties of nanostructured TiO2-graphene composites by rapid sintering

Science.gov (United States)

Shon, In-Jin; Yoon, Jin-Kook; Hong, Kyung-Tae

2018-01-01

Despite of many attractive properties of TiO2, the drawback of TiO2 ceramic is low fracture toughness for widely industrial application. The method to improve the fracture toughness and hardness has been reported by addition of reinforcing phase to fabricate a nanostructured composite. In this regard, graphene has been evaluated as an ideal second phase in ceramics. Nearly full density of nanostructured TiO2-graphene composite was achieved within one min using pulsed current activated sintering. The effect of graphene on microstructure, fracture toughness and hardness of TiO2-graphene composite was evaluated using Vickers hardness tester and field emission scanning electron microscopy. The grain size of TiO2 in the TiO2-x vol% (x = 0, 1, 3, and 5) graphene composite was greatly reduced with increase in addition of graphene. Both hardness and fracture toughness of TiO2-graphene composites simultaneously increased in the addition of graphene.

Silver-graphene oxide based plasmonic spacer for surface plasmon-coupled fluorescence emission enhancements

Science.gov (United States)

Badiya, Pradeep Kumar; Srinivasan, Venkatesh; Sathish Ramamurthy, Sai

2017-06-01

We report the application of single layered graphene oxide (SLGO) and silver decorated SLGO (Ag-SLGO) as plasmonic spacer material for obtaining enhanced fluorescence from a Rhodamine 6G (Rh6G) radiating dipole in a surface plasmon-coupled emission platform. To this end, we have decorated SLGO with biphasic silver nanoparticles using an in situ deposition technique to achieve 112-fold fluorescence enhancements.

Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

Science.gov (United States)

Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

2018-01-01

Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

Nanoscale strain engineering of graphene and graphene-based devices

Institute of Scientific and Technical Information of China (English)

N-C Yeh; C-C Hsu; M L Teague; J-Q Wang; D A Boyd; C-C Chen

2016-01-01

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simula-tions and nano-fabrication technology.

Nonlinear graphene plasmonics

Science.gov (United States)

Ooi, Kelvin J. A.; Tan, Dawn T. H.

2017-10-01

The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications.

Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices

Energy Technology Data Exchange (ETDEWEB)

Xu, Jinzhuo; Ou-Yang, Wei, E-mail: ouyangwei@phy.ecnu.edu.cn; Chen, Xiaohong; Guo, Pingsheng; Piao, Xianqing; Sun, Zhuo [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 (China); Xu, Peng; Wang, Miao [Department of Physics, Zhejiang University, 38 ZheDa Road, Hangzhou 310027 (China); Li, Jun [Department of Electronic Science and Technology, Tongji University, 4800 Caoan Road, Shanghai 201804 (China)

2015-02-16

Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.

In situ deposition of hydroxyapatite on graphene nanosheets

International Nuclear Information System (INIS)

Neelgund, Gururaj M.; Oki, Aderemi; Luo, Zhiping

2013-01-01

Graphical abstract: A facile chemical precipitation method is reported for effective in situ deposition of hydroxyapatite on graphene nanosheets. Prior to grafting of hydroxyapatite, chemically modified graphene nanosheets were obtained by the reduction of graphene oxide in presence of ethylenediamine. Display Omitted Highlights: ► It is a facile and effective method for deposition of HA on GR nanosheets. ► It avoids the use of harmful reducing agents like hydrazine, NaBH 4 etc. ► GR nanosheets were produced using bio-compatible, ethylenediamine. ► The graphitic structure of synthesized GR nanosheets was high ordered. ► The ratio of Ca to P in HA was 1.64, which is close to ratio in natural bone. -- Abstract: Graphene nanosheets were effectively functionalized by in situ deposition of hydroxyapatite through a facile chemical precipitation method. Prior to grafting of hydroxyapatite, chemically modified graphene nanosheets were obtained by the reduction of graphene oxide in presence of ethylenediamine. The resulting hydroxyapatite functionalized graphene nanosheets were characterized by attenuated total reflection IR spectroscopy, X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, Raman spectroscopy and thermogravimetric analysis. These characterization techniques revealed the successful grafting of hydroxyapatite over well exfoliated graphene nanosheets without destroying their structure.

In situ deposition of hydroxyapatite on graphene nanosheets

Energy Technology Data Exchange (ETDEWEB)

Neelgund, Gururaj M. [Department of Chemistry, Prairie View A and M University, Prairie View, TX 77446 (United States); Oki, Aderemi, E-mail: aroki@pvamu.edu [Department of Chemistry, Prairie View A and M University, Prairie View, TX 77446 (United States); Luo, Zhiping [Microscopy and Imaging Center and Materials Science and Engineering Program, Texas A and M University, College Station, TX 77843 (United States)

2013-02-15

Graphical abstract: A facile chemical precipitation method is reported for effective in situ deposition of hydroxyapatite on graphene nanosheets. Prior to grafting of hydroxyapatite, chemically modified graphene nanosheets were obtained by the reduction of graphene oxide in presence of ethylenediamine. Display Omitted Highlights: ► It is a facile and effective method for deposition of HA on GR nanosheets. ► It avoids the use of harmful reducing agents like hydrazine, NaBH{sub 4} etc. ► GR nanosheets were produced using bio-compatible, ethylenediamine. ► The graphitic structure of synthesized GR nanosheets was high ordered. ► The ratio of Ca to P in HA was 1.64, which is close to ratio in natural bone. -- Abstract: Graphene nanosheets were effectively functionalized by in situ deposition of hydroxyapatite through a facile chemical precipitation method. Prior to grafting of hydroxyapatite, chemically modified graphene nanosheets were obtained by the reduction of graphene oxide in presence of ethylenediamine. The resulting hydroxyapatite functionalized graphene nanosheets were characterized by attenuated total reflection IR spectroscopy, X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, Raman spectroscopy and thermogravimetric analysis. These characterization techniques revealed the successful grafting of hydroxyapatite over well exfoliated graphene nanosheets without destroying their structure.

Graphene/SnO2 nanocomposite-modified electrode for electrochemical detection of dopamine

OpenAIRE

R. Nurzulaikha; H.N. Lim; I. Harrison; S.S. Lim; A. Pandikumar; N.M. Huang; S.P. Lim; G.S.H. Thien; N. Yusoff; I. Ibrahim

2015-01-01

A graphene-tin oxide (G-SnO2) nanocomposite was prepared via a facile hydrothermal route using graphene oxide and Sn precursor solution without addition of any surfactant. The hydrothermally synthesized G-SnO2 nanocomposite was characterized using a field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM), X-ray diffraction (XRD), and energy dispersive spectroscopy (EDS). A homogeneous deposition of SnO2 nanoparticles with an average partic...

Investigating the performance of nitrogen-doped graphene photoanode in dye-sensitized solar cells

Science.gov (United States)

Joseph, Easter; Singh, Balbir Singh Mahinder; Mohamed, Norani Muti; Kait, Chong Fai; Saheed, Mohamed Shuaib Mohamed; Khatani, Mehboob

2016-11-01

In this paper, the atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesize graphene on a copper substrate by utilizing methane as a precursor and N-doped graphene (NDG) in the presence of ammonia. The performance of pure titanium dioxide (TiO2), TiO2/graphene, and TiO2/NDG as photoanodes in dye-sensitized solar cell (DSSC) were compared. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) showed flakes of few layers with an interrupted layer in both graphene and NDG. DSSC consist of TiO2/NDG photoanode exhibits a better enhancement due to the high conductivity of donor N in graphene which enhances the electron transportation across nanoporous TiO2.

The Hall coefficient: a tool for characterizing graphene field effect transistors

International Nuclear Information System (INIS)

Wehrfritz, Peter; Seyller, Thomas

2014-01-01

Graphene field effect transistors are considered as a candidate for future high-frequency applications. For their realization, the optimal combination of substrate, graphene preparation, and insulator deposition and composition is required. This optimization must be based on an in-depth characterization of the obtained graphene insulator metal (GIM) stack. Hall effect measurements are frequently employed to study such systems, thereby focussing primarily on the charge carrier mobility. In this work we show how an analysis of the sheet Hall coefficient can reveal further important properties of the GIM stack, like, e.g., the interface trap density and the spacial charge inhomogeneity. To that end, we provide an extensive description of the GIM diode, which leads to an accurate calculation of the sheet Hall coefficient dependent on temperature and gate voltage. The gate dependent inverse sheet Hall coefficient is discussed in detail before we introduce the concept of an equivalent temperature, which is a measure of the spacial charge inhomogeneity. In order to test the concept, we apply it to evaluate already measured Hall data taken from the literature. This evaluation allows us to determine the Drude mobility, even at the charge neutrality point, which is inaccessible with a simple one band Hall mobility analysis, and to shed light on the spacial charge inhomogeneity. The formalism is easily adaptable and provides experimentalists a powerful tool for the characterization of their graphene field effect devices. (paper)

Synthesis of Flexible Graphene/Polymer Composites for Supercapacitor Applications

Science.gov (United States)

Pal, Himangshu; Bhubna, Shuvam; Kumar, Praduman; Mahapatra, Rajat; Chatterjee, Somenath

2018-01-01

In this paper, the graphene was synthesized using biocompatible cellulosic component from onions. Onion epidermal cells were chosen as raw material. During heating at high temperature, the bonding among atoms in material was rearranged and forms two-dimensional hexagonal carbon layer (graphene). The characterization of synthesized graphene was done by x-ray diffractometer, Raman spectrometer and field emission scanning electron microscopy, respectively. An attempt has been taken to form the capacitors with two different current collector electrodes, anticipating the performance of the supercapacitors. The observed capacitance values as-obtained for Al and Au current collector were 1.3 μF and 6.08 μF, respectively. However, when thermally exfoliated graphene was used as an electrode on Al and Au current collector, the capacitance value was drastically increased and found to be 1.6 and 41.25 μF, respectively.

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

Science.gov (United States)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Measurements of weak localization of graphene in inhomogeneous magnetic fields

DEFF Research Database (Denmark)

Lindvall, N.; Shivayogimath, Abhay; Yurgens, A.

2015-01-01

attribute this to the inhomogeneous field caused by vortices in the superconductor. The deviation, which depends on the carrier concentration in graphene, can be tuned by the gate voltage. In addition, collective vortex motion, known as vortex avalanches, is observed through magnetoresistance measurements...

Magnetic-field-controlled negative differential conductance in scanning tunneling spectroscopy of graphene npn junction resonators

Science.gov (United States)

Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin

2018-03-01

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.

Experimental study on heat transfer augmentation of graphene based ferrofluids in presence of magnetic field

DEFF Research Database (Denmark)

Sadeghinezhad, Emad; Mehrali, Mohammad; Akhiani, Amir Reza

2017-01-01

The effect of a permanent magnetic field on the heat transfer characteristics of hybrid graphene-magnetite nanofluids (hybrid nanofluid) under forced laminar flow was experimentally investigated. For this purpose, a reduced graphene oxide-Fe3O4 was synthesized by using two-dimensional (2D) graphene...... and it shows that the thermal conductivity increased up to 11%. The hybrid nanofluid behaves as a Newtonian fluid with liquid like behavior with superparamagnetic properties as was evident from its magnetic saturation value at 45.9 emu/g. Moreover, the experimental heat-transfer results indicated that the heat...... transfer enhancement of the hybrid nanofluid compared to the control fluid (distilled water) was negligible when no magnetic field was applied. Additionally, the convective heat transfer was significantly improved under the influence of a magnetic field with a maximum enhancement of 82% in terms...

Direct synthesis of multi-layer graphene film on various substrates by microwave plasma at low temperature

Energy Technology Data Exchange (ETDEWEB)

Park, Hyun Jae [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Ahn, Byung Wook; Kim, Tae Yoo; Lee, Jung Woo [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Yong Ho; Choi, Yong Sup [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Song, Young Il, E-mail: physein01@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Su Jeong, E-mail: suhsj@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-31

We introduce a possible route for vertically standing multi-layer graphene films (VMGs) on various substrates at low temperature by electron cyclone resonance microwave plasma. VMG films on various substrates, including copper sheet, glass and silicon oxide wafer, were analyzed by studying their structural, electrical, and optical properties. The density and temperature of plasma were measured using Cylindrical Langmuir probe analysis. The morphologies and microstructures of multi-layer graphene were characterized using field emission scattering electron microscope, high resolution transmission electron microscope, and Raman spectra measurement. The VMGs on different substrates at the same experimental conditions synthesized the wrinkled VMGs with different heights. In addition, the transmittance and electrical resistance were measured using ultra-violet visible near-infrared spectroscopy and 4 probe point surface resistance measurement. The VMGs on glass substrate obtained a transmittance of 68.8% and sheet resistance of 796 Ω/square, whereas the VMGs on SiO{sub 2} wafer substrate showed good sheet resistance of 395 Ω/square and 278 Ω/square. The results presented herein demonstrate a simple method of synthesizing of VMGs on various substrates at low temperature for mass production, in which the VMGs can be used in a wide range of application fields for energy storage, catalysis, and field emission due to their unique orientation. - Highlights: • We present for synthesis method of graphene at low temperature on various substrates. • We grow the graphene films at low temperature under of 432 °C. • Structural information of graphene films were studied upon Raman spectroscopy. • Inter-layer spacing of vertically standing graphene relies on synthesis time. • We measured a transmittance and a resistance for graphene films on difference substrate.

Lattice-induced double-valley degeneracy lifting in graphene by a magnetic field.

Science.gov (United States)

Luk'yanchuk, Igor A; Bratkovsky, Alexander M

2008-05-02

We show that the recently discovered double-valley splitting of the Landau levels in the quantum Hall effect in graphene can be explained as the perturbative orbital interaction of intravalley and intervalley microscopic orbital currents with a magnetic field. This effect is facilitated by the translationally noninvariant terms that correspond to graphene's crystallographic honeycomb symmetry but do not exist in the relativistic theory of massless Dirac fermions in quantum electrodynamics. We discuss recent data in view of these findings.

Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field.

Science.gov (United States)

Tian, Xiaoqing; Xu, Jianbin; Wang, Xiaomu

2010-09-09

The band gap opening of bilayer graphene with one side surface adsorption of F4-TCNQ is reported. F4-TCNQ doped bilayer graphene shows p-type semiconductor characteristics. With a F4-TCNQ concentration of 1.3 x 10(-10) mol/cm(2), the charge transfer between each F4-TCNQ molecule and graphene is 0.45e, and the built-in electric field, E(bi), between the graphene layers could reach 0.070 V/A. The charge transfer and band gap opening of the F4-TCNQ-doped graphene can be further modulated by an externally applied electric field (E(ext)). At 0.077 V/A, the gap opening at the Dirac point (K), DeltaE(K) = 306 meV, and the band gap, E(g) = 253 meV, are around 71% and 49% larger than those of the pristine bilayer under the same E(ext).

Valley-polarized quantum transport generated by gauge fields in graphene

DEFF Research Database (Denmark)

Settnes, Mikkel; Garcia, Jose H; Roche, Stephan

2017-01-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by t...... Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder....

Optical and magnetic properties of porous graphene films produced by electrospraying

International Nuclear Information System (INIS)

Zhao, Jun; Yang, Shan-Shan; Chen, Li-Qing; Zhang, Zhao-Chun; Zheng, Hou-Li

2013-01-01

Graphene films have been produced by electrospraying on SiO 2 -coated silicon substrate and subsequent heat treatment, offering a simple and typical method to produce porous graphene films and exhibiting a good adhesion to silicon substrate. The microstructures of as-prepared graphene films were characterized by field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and atomic force microscopy. X-ray photoelectron spectroscopy, infrared spectroscopy and Raman spectroscopy further confirmed the formation of porous graphene films. Moreover, the reflection spectrum of as-prepared graphene films was studied by ultraviolet–visible spectroscopy, revealing that light absorption played dominant roles at 375 and 635 nm, respectively. Finally, the resistance and magnetoresistance were measured, and some preliminary theoretical explanations were proposed. - Highlights: ► Porous graphene films were produced by electrospraying. ► Light absorption plays dominant roles at 375 and 635 nm. ► A negative magnetoresistance is emerged at low temperature. ► A 2D weak localization effect arises from random stacking of graphene

Graphene and graphene oxide: biofunctionalization and applications in biotechnology.

Science.gov (United States)

Wang, Ying; Li, Zhaohui; Wang, Jun; Li, Jinghong; Lin, Yuehe

2011-05-01

Graphene is the basic building block of 0D fullerene, 1D carbon nanotubes, and 3D graphite. Graphene has a unique planar structure, as well as novel electronic properties, which have attracted great interests from scientists. This review selectively analyzes current advances in the field of graphene bioapplications. In particular, the biofunctionalization of graphene for biological applications, fluorescence-resonance-energy-transfer-based biosensor development by using graphene or graphene-based nanomaterials, and the investigation of graphene or graphene-based nanomaterials for living cell studies are summarized in more detail. Future perspectives and possible challenges in this rapidly developing area are also discussed. Copyright © 2011 Elsevier Ltd. All rights reserved.

Inhomogeneous ozone doping and heat induced defects in graphene studied by infrared near-field microscopy

Science.gov (United States)

Wang, Wenjie; Zhang, Jiawei; Deng, Haiming; Liu, Megnkun; Xu, Du

With the potential use of surface plasmon such as transfer data many orders faster than traditional wires, it has been very popular in research. The fact is that the wavelength of of plasmon is much shorter than the one of free space radiation. The UV ozone doping level can be fine controlled in room temperature creating selected plasmon circuit. We study inhomogeneous graphene plasmonics in ozone doped graphene using scattering-type scanning near-field infrared microscopy and spectroscopy. The single layer and bilayer graphene are doped with different dosage of ozone under UV exposure, which lead to surface inhomogeneity and inhomogeneous graphene plasmon polarition excitation under tip. After annealing the ozone doped graphene in air, the inhomogeneous doping induced plasmons disappear, together with the occurrence of local defects after high temperature annealing.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

Science.gov (United States)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-01

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

Science.gov (United States)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-15

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Transport properties in a monolayer graphene modulated by the realistic magnetic field and the Schottky metal stripe

Science.gov (United States)

Lu, Jian-Duo; Li, Yun-Bao; Liu, Hong-Yu; Peng, Shun-Jin; Zhao, Fei-Xiang

2016-09-01

Based on the transfer-matrix method, a systematic investigation of electron transport properties is done in a monolayer graphene modulated by the realistic magnetic field and the Schottky metal stripe. The strong dependence of the electron transmission and the conductance on the incident angle of carriers is clearly seen. The height, position as well as width of the barrier also play an important role on the electron transport properties. These interesting results are very useful for understanding the tunneling mechanism in the monolayer graphene and helpful for designing the graphene-based electrical device modulated by the realistic magnetic field and the electrical barrier.

Enhanced polymer light-emitting diode property using fluorescent conducting polymer-reduced graphene oxide nanocomposite as active emissive layer

Science.gov (United States)

Singh, Jyoti Prakash; Saha, Uttam; Jaiswal, Rimpa; Anand, Raghubir Singh; Srivastava, Anurag; Goswami, Thako Hari

2014-11-01

The present article reports the polymer light-emitting diode property of the nanocomposite comprising poly 9,9-dioctyl fluorene- alt-bithiophene and reduced graphene oxide used as an emissive layer. Two times repetition of Hummers oxidation and hydrazine hydrate reduction method produce reduced graphene oxide (term as rGO2) with more uniform distribution in size and thickness. In addition, this uniquely synthesized rGO2 induces favorable shift in balance of electron and hole recombination zone toward the center of emissive layer owing to increase in in-plane crystallite size and high localize aromatic confinement. Five times increase in maximum device efficiency (Cd/A) and three times increase in maximum brightness (Cd/m2) are achieved with the LED device using nanocomposite as emissive layer compared to neat polymer. Also, the fabricated device requires relatively low turn-on voltage (4 V) because of low energy barrier between PEDOT work function (-5.0 eV) and HOMO levels of bi-thiophene copolymer -5.67 eV) and nanocomposite (-5.66 eV).

Designing field-controllable graphene-dot-graphene single molecule switches: A quantum-theoretical proof-of-concept under realistic operating conditions.

Science.gov (United States)

Pejov, Ljupčo; Petreska, Irina; Kocarev, Ljupčo

2015-12-28

A theoretical proof of the concept that a particularly designed graphene-based moletronics device, constituted by two semi-infinite graphene subunits, acting as source and drain electrodes, and a central benzenoid ring rotator (a "quantum dot"), could act as a field-controllable molecular switch is outlined and analyzed with the density functional theory approach. Besides the ideal (0 K) case, we also consider the operation of such a device under realistic operating (i.e., finite-temperature) conditions. An in-depth insight into the physics behind device controllability by an external field was gained by thorough analyses of the torsional potential of the dot under various conditions (absence or presence of an external gating field with varying strength), computing the torsional correlation time and transition probabilities within the Bloembergen-Purcell-Pound formalism. Both classical and quantum mechanical tunneling contributions to the intramolecular rotation were considered in the model. The main idea that we put forward in the present study is that intramolecular rotors can be controlled by the gating field even in cases when these groups do not possess a permanent dipole moment (as in cases considered previously by us [I. Petreska et al., J. Chem. Phys. 134, 014708-1-014708-12 (2011)] and also by other groups [P. E. Kornilovitch et al., Phys. Rev. B 66, 245413-1-245413-7 (2002)]). Consequently, one can control the molecular switching properties by an external electrostatic field utilizing even nonpolar intramolecular rotors (i.e., in a more general case than those considered so far). Molecular admittance of the currently considered graphene-based molecular switch under various conditions is analyzed employing non-equilibrium Green's function formalism, as well as by analysis of frontier molecular orbitals' behavior.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Electronic structure and trajectory control of Dirac fermions in graphene ribbons under the competition between electric and magnetic fields

International Nuclear Information System (INIS)

Yang, Mou; Cui, Yan; Wang, Rui-Qiang; Zhao, Hong-Bo

2012-01-01

We investigate the electronic structure of graphene ribbons under the competition between lateral electric and normal magnetic fields. The squeezing of quantum level spacings caused by either field is studied. Based on the knowledge of the dispersion under both fields, we analyze the electronic trajectories near the junctions of different electric and magnetic fields configurations. The junctions can split and join electron beams, and the conductance is quite robust against disorder near the junction interfaces. These junction devices can be used as bricks for building more complicated interference devices. -- Highlights: ► Unified physical picture of graphene ribbon under electric and magnetic fields is provided. ► Squeezing of level spacings caused by electric and magnetic fields is investigated. ► Graphene devices for electron beam split and joint are proposed.

Transport in a magnetic field modulated graphene superlattice.

Science.gov (United States)

Li, Yu-Xian

2010-01-13

Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

International Nuclear Information System (INIS)

Di Bartolomeo, A; Giubileo, F; Iemmo, L; Romeo, F; Santandrea, S; Gambardella, U

2013-01-01

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts. We also studied the contact resistance between the graphene and the metal electrodes with larger values of ∼30 kΩμm 2 recorded for Ti contacts. Importantly, we prove that the contact resistance is modulated by the back-gate voltage. (paper)

Synthesis and luminescence of graphene-nano calcium sulphide composite

International Nuclear Information System (INIS)

Sharma, Geeta; Patil, K.R.; Gosavi, S.W.

2014-01-01

Graphene-nanocrystalline calcium sulphide has been synthesized using in-situ reduction of calcium salt and graphene oxide. Graphene oxide was prepared using Hummer's method. Surface morphology and crystal structure of samples were observed by transmission electron microscopy (TEM) and X-Ray diffraction (XRD). Ultra thin graphene and graphene oxide sheets with size ranging between tens to several hundreds of square nanometers are observed in TEM images. The TEM micrographs of G-CaS show that CaS particles are embedded in graphene sheets and the average particle size of CaS particles in the composite is less than 50 nm. The reduction in the intensity of various functional groups in FTIR spectrum also confirms the formation of graphene. The UV-Visible spectra of CaS shows absorption peak at 220 nm with a small shoulder at 250 nm whereas in G-CaS 220 nm absorption peak has reduced intensity and the shoulder at 250 nm has now shifted to 270 nm due to modification in the defect structure of CaS by graphene. CaS and G-CaS shows photoluminescence emission at 470 nm (λ exc . = 375 nm) and 440 nm (λ exc . = 350 nm) respectively, however emission intensity of G-CaS is relatively lower than CaS. Although the emission intensity is found to be lower than CaS, addition of CaS to graphene in G-CaS complex has made graphene luminescent. XPS spectra also indicate reduction of various oxygen containing functional groups in highly reduced graphene oxide and G-CaS. - Highlights: • G-CaS was synthesized using in situ reduction of calcium salt and graphene oxide. • Samples were characterized by XRD, TEM, PL, FTIR, XPS, Raman Spectroscopy. • TEM of GCaS show CaS particles having size less than 50 nm are embedded in graphene. • G-CaS shows PL emission at 440 nm when excited with 350 nm. • PL emission intensity in case of G-CaS is lower than CaS but it is luminescent

Spectroscopically forbidden infra-red emission in Au-vertical graphene hybrid nanostructures

Science.gov (United States)

Sivadasan, A. K.; Parida, Santanu; Ghosh, Subrata; Pandian, Ramanathaswamy; Dhara, Sandip

2017-11-01

Implementation of Au nanoparticles (NPs) is a subject for frontier plasmonic research due to its fascinating optical properties. Herein, the present study deals with plasmonic assisted emission properties of Au NPs-vertical graphene (VG) hybrid nanostructures. The influence of effective polarizability of Au NPs on the surface enhanced Raman scattering and luminescence properties is investigated. In addition, a remarkable infra-red emission in the hybrid nanostructures is observed and interpreted on the basis of intra-band transitions in Au NPs. The flake-like nanoporous VG structure is invoked for the generation of additional confined photons to impart additional momentum and a gradient of confined excitation energy towards initiating the intra-band transitions of Au NPs. Integrating Au plasmonic materials in three-dimensional VG nanostructures enhances the light-matter interactions. The present study provides a new adaptable plasmonic assisted pathway for optoelectronic and sensing applications.

Local electric field screening in bi-layer graphene devices

Directory of Open Access Journals (Sweden)

Vishal ePanchal

2014-02-01

Full Text Available We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG and bi-layer graphene (2LG devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

Field effect transistors and photodetectors based on nanocrystalline graphene derived from electron beam induced carbonaceous patterns

International Nuclear Information System (INIS)

Kurra, Narendra; Bhadram, Venkata Srinu; Narayana, Chandrabhas; Kulkarni, G U

2012-01-01

We describe a transfer-free method for the fabrication of nanocrystalline graphene (nc-graphene) on SiO 2 substrates directly from patterned carbonaceous deposits. The deposits were produced from the residual hydrocarbons present in the vacuum chamber without any external source by using an electron beam induced carbonaceous deposition (EBICD) process. Thermal treatment under vacuum conditions in the presence of Ni catalyst transformed the EBIC deposit into nc-graphene patterns, confirmed using Raman and TEM analysis. The nc-graphene patterns have been employed as an active p-type channel material in a field effect transistor (FET) which showed a hole mobility of ∼90 cm 2 V −1 s −1 . The nc-graphene also proved to be suitable material for IR detection. (paper)

Field-induced stacking transition of biofunctionalized trilayer graphene

Energy Technology Data Exchange (ETDEWEB)

Masato Nakano, C. [Flintridge Preparatory School, La Canada, California 91011 (United States); Sajib, Md Symon Jahan; Samieegohar, Mohammadreza; Wei, Tao [Dan F. Smith Department of Chemical Engineering, Lamar University, Beaumont, Texas 77710 (United States)

2016-02-01

Trilayer graphene (TLG) is attracting a lot of attention as their stacking structures (i.e., rhombohedral vs. Bernal) drastically affect electronic and optical properties. Based on full-atom molecular dynamics simulations, we here predict electric field-induced rhombohedral-to-Bernal transition of TLG tethered with proteins. Furthermore, our simulations show that protein's electrophoretic mobility and diffusivity are enhanced on TLG surface. This phenomenon of controllable TLG stacking transition will contribute to various applications including biosensing.

Reduction of Graphene Oxide to Graphene by Using Gamma Irradiation

International Nuclear Information System (INIS)

Shamellia Sharin; Irman Abdul Rahman; Ainee Fatimah Ahmad

2015-01-01

This research aims to gauge the ability of gamma radiation to induce the reduction of graphene oxide to graphene. Graphene oxide powders were dispersed into a mixture of alcohol and deionized water, and the mixture was then irradiated with a "6"0Co source using a GammaCell 220 Excel irradiator at absorbed doses of 0, 5, 15, 20 and 35 kGy. According to characterization using Fourier Transformed Infrared Spectroscopy (FTIR), it can be seen that almost every oxygen-containing functional group has been removed after irradiation of the graphene oxide mixture. Reduction of graphene oxide was also proven from the characterization using UV-Vis Spectroscopy, in which the wavelength of graphene oxide at 237 nm was red-shifted to 277 nm after being irradiated and the peak at 292 nm, (indicating the carboxyl group) disappears in the UV-Vis spectrum of reduced graphene oxide. Morphology of graphene oxide also changed from a smooth and flat surface to crumpled. The ratio of carbon/ oxygen in the graphene oxide was lower than the carbon/ oxygen of reduced graphene oxide. At the end of the experiment, it can be deduced that graphene oxide underwent reduction, characterized before and after irradiation using Emission Scanned Electron Microscopy and Energy Dispersive X-ray, Fourier Transformed Infrared Spectroscopy and UV-Vis Spectroscopy. Therefore, we postulate that the irradiation technique that induces reduction, can be used to obtain reduced graphene oxide from graphene oxide. (author)

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Science.gov (United States)

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-01

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green’s function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

Tribological Behaviors of Graphene and Graphene Oxide as Water-Based Lubricant Additives for Magnesium Alloy/Steel Contacts

Directory of Open Access Journals (Sweden)

Hongmei Xie

2018-01-01

Full Text Available The tribological behaviors of graphene and graphene oxide (GO as water-based lubricant additives were evaluated by use of a reciprocating ball-on-plate tribometer for magnesium alloy-steel contacts. Three sets of test conditions were examined to investigate the effect of concentration, the capacity of carrying load and the endurance of the lubrication film, respectively. The results showed that the tribological behaviors of water can be improved by adding the appropriate graphene or GO. Compared with pure deionized water, 0.5 wt.% graphene nanofluids can offer reduction of friction coefficient by 21.9% and reduction of wear rate by 13.5%. Meanwhile, 0.5 wt.% GO nanofluids were found to reduce the friction coefficient and wear rate up to 77.5% and 90%, respectively. Besides this, the positive effect of the GO nanofluids was also more pronounced in terms of the load-carrying capacity and the lubrication film endurance. The wear mechanisms have been tentatively proposed according to the observation of the worn surfaces by field emission scanning electron microscope-energy dispersive spectrometer (FESEM-EDS and Raman spectrum as well as the wettability of the nanofluids on the magnesium alloy surface by goniometer.

Tribological Behaviors of Graphene and Graphene Oxide as Water-Based Lubricant Additives for Magnesium Alloy/Steel Contacts.

Science.gov (United States)

Xie, Hongmei; Jiang, Bin; Dai, Jiahong; Peng, Cheng; Li, Chunxia; Li, Quan; Pan, Fusheng

2018-01-29

The tribological behaviors of graphene and graphene oxide (GO) as water-based lubricant additives were evaluated by use of a reciprocating ball-on-plate tribometer for magnesium alloy-steel contacts. Three sets of test conditions were examined to investigate the effect of concentration, the capacity of carrying load and the endurance of the lubrication film, respectively. The results showed that the tribological behaviors of water can be improved by adding the appropriate graphene or GO. Compared with pure deionized water, 0.5 wt.% graphene nanofluids can offer reduction of friction coefficient by 21.9% and reduction of wear rate by 13.5%. Meanwhile, 0.5 wt.% GO nanofluids were found to reduce the friction coefficient and wear rate up to 77.5% and 90%, respectively. Besides this, the positive effect of the GO nanofluids was also more pronounced in terms of the load-carrying capacity and the lubrication film endurance. The wear mechanisms have been tentatively proposed according to the observation of the worn surfaces by field emission scanning electron microscope-energy dispersive spectrometer (FESEM-EDS) and Raman spectrum as well as the wettability of the nanofluids on the magnesium alloy surface by goniometer.

Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

Science.gov (United States)

Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

2017-08-01

Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

A new loss mechanism in graphene nanoresonators due to the synthetic electric fields caused by inherent out-of-plane membrane corrugations

International Nuclear Information System (INIS)

Firsova, N E; Firsov, Yu A

2012-01-01

For the first time the influence of out-of-plane deformations, which always exist in graphene, on the non-stationary processes is considered for the case of a monolayer graphene nanoresonator. A new loss mechanism for this device caused by dissipative intra-valley currents stipulated by synthetic electric fields is studied. These fields are generated by time-dependent gauge fields arising in a graphene membrane due to its intrinsic out-of-plane distortions and the influence of the external periodic electromotive force. The corresponding formula for the quality factor has a quantum mechanical origin and includes quantum mechanical parameters. This loss mechanism accounts for an essential part (about 40%) of losses in a graphene nanoresonator and it is specific just for graphene. The ways of minimization of this kind of dissipation (an increase in the quality factor of the electromechanical system) are discussed. It is explained why one can enhance the quality factor by correctly choosing a combination of strains (by strain engineering). In addition, it is shown that the quality factor can be increased by switching on a magnetic field perpendicular to the graphene membrane.

Electron-electron interactions in graphene field-induced quantum dots in a high magnetic field

DEFF Research Database (Denmark)

Orlof, A.; Shylau, Artsem; Zozoulenko, I. V.

2015-01-01

We study the effect of electron-electron interaction in graphene quantum dots defined by an external electrostatic potential and a high magnetic field. To account for the electron-electron interaction, we use the Thomas-Fermi approximation and find that electron screening causes the formation...... of compressible strips in the potential profile and the electron density. We numerically solve the Dirac equations describing the electron dynamics in quantum dots, and we demonstrate that compressible strips lead to the appearance of plateaus in the electron energies as a function of the magnetic field. Finally...

Coulomb scattering in field and photofield emission

International Nuclear Information System (INIS)

Donders, P.J.; Lee, M.J.G.

1987-01-01

An anomalous high-energy tail has been observed in the measured total energy distribution (TED) in photofield emission from tungsten. The strength of this tail is proportional to the product of the photofield emission current and the total emission current. Similar high- and low-energy tails in the TED's in field emission, which have previously been reported by several workers, are also observed. In any given measurement, the fraction of the total photofield-emission current in the anomalous photofield-emission tail is approximately equal to the fraction of the total field-emission current in the anomalous field-emission tail. Measurements of both the absolute strengths and energy dependences of the anomalous tails are reported. The experimental observations are consistent with the predictions of a classical calculation of the energy transfer that results from the Coulomb interaction between electrons in the vacuum near the field emitter. The various internal mechanisms that have previously been invoked to account for the tails in field-emission TED's do not appear to contribute significantly to the anomalous distributions observed in the present work

Boron nitride encapsulated graphene infrared emitters

International Nuclear Information System (INIS)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

2016-01-01

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Boron nitride encapsulated graphene infrared emitters

Energy Technology Data Exchange (ETDEWEB)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

2016-03-28

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Design of a tunable graphene plasmonic-on-white graphene switch at infrared range

Science.gov (United States)

Farmani, Ali; Zarifkar, Abbas; Sheikhi, Mohammad H.; Miri, Mehdi

2017-12-01

A tunable Y-branch graphene plasmonic switch operating at the wavelength of 1.55 μm is proposed in which graphene is placed on white graphene. The switch structure is investigated analytically and numerically by the finite difference time domain method. The graphene plasmonic switch considered here supports both transverse magnetic and transverse electric graphene plasmons whose propagation characteristics can be controlled by modulating the external electric field and the temperature of graphene. Our calculations show that by strong coupling between the incident waves and the graphene plasmons of the structure, a high polarization extinction ratio of 45 dB and relatively large bandwidth of 150 nm around the central wavelength of 1.55 μm are achievable. Furthermore, the application of white graphene as the substrate of graphene decreases the propagation loss of the graphene plasmons and the required applied electric field. It is also shown that the propagation mode of the graphene plasmons can be tuned by changing the temperature and the calculated threshold temperature is 650 K.

Field emission studies at Saclay and Orsay

International Nuclear Information System (INIS)

Tan, J.

1996-01-01

During the last five years, DC and RF equipment for field emission studies have been developed at Saclay and Orsay laboratories. Combining these devices, straight comparison has been carried out between DC and RF field emission from artificial emission sites on the same sample. Other topics are also reviewed: high field cleaning, plausible origins of thermal effects that occurred on emission sites in RF, behaviour of alumina particles under RF field, and optical observations and measurements. (author)

Field emission from finite barrier quantum structures

Energy Technology Data Exchange (ETDEWEB)

Biswas Sett, Shubhasree, E-mail: shubhasree24@gmail.com [The Institution of Engineers - India, 8, Gokhale Road, Kolkata 700 020 (India); Bose, Chayanika, E-mail: chayanikab@ieee.org [Electronics and Telecommunication Engg. Dept., Jadavpur University, Kolkata 700 032 (India)

2014-10-01

We study field emission from various finite barrier quasi-low dimensional structures, taking image force into account. To proceed, we first formulate an expression for field emission current density from a quantum dot. Transverse dimensions of the dot are then increased in turn, to obtain current densities respectively from quantum wire and quantum well with infinite potential energy barriers. To find out field emission from finite barrier structures, the above analysis is followed with a correction in the energy eigen values. In course, variations of field emission current density with strength of the applied electric field and structure dimensions are computed considering n-GaAs and n-GaAs/Al{sub x}Ga{sub 1−x}As as the semiconductor materials. In each case, the current density is found to increase exponentially with the applied field, while it oscillates with structure dimensions. The magnitude of the emission current is less when the image force is not considered, but retains the similar field dependence. In all cases, the field emission from infinite barrier structures exceeds those from respective finite barrier ones.

Current transport across the pentacene/CVD-grown graphene interface for diode applications

International Nuclear Information System (INIS)

Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

2012-01-01

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole-Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole-Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole-Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface. (paper)

Current transport across the pentacene/CVD-grown graphene interface for diode applications.

Science.gov (United States)

Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

2012-06-27

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole–Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole–Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole–Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

Science.gov (United States)

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

One-step synthesis of graphene/polyaniline hybrids by in situ intercalation polymerization and their electromagnetic properties

Science.gov (United States)

Chen, Xiangnan; Meng, Fanchen; Zhou, Zuowan; Tian, Xin; Shan, Liming; Zhu, Shibu; Xu, Xiaoling; Jiang, Man; Wang, Li; Hui, David; Wang, Yong; Lu, Jun; Gou, Jihua

2014-06-01

A new method is introduced for the preparation of graphene/polyaniline hybrids using a one-step intercalation polymerization of aniline inside the expanded graphite. The structural and morphological characterizations were performed by X-ray diffraction analysis, transmission electron microscopy and field emission scanning electron microscopy. Both the experimental and first-principles simulated results show that the aniline cation formed by aniline and H+ tends to be drawn towards the electron-enriched zone and to intercalate into the interlayer of graphite. Subsequently, an in situ polymerization leads to the separation of graphite into graphene sheet, resulting from the exothermic effect and more vigorous movements of the chain molecules of polyaniline. The interactions between polyaniline and graphene were confirmed by Fourier transform infrared spectroscopy and Raman spectra. In addition, the graphene/polyaniline hybrid exhibited a breakthrough in the improvement of microwave absorption.A new method is introduced for the preparation of graphene/polyaniline hybrids using a one-step intercalation polymerization of aniline inside the expanded graphite. The structural and morphological characterizations were performed by X-ray diffraction analysis, transmission electron microscopy and field emission scanning electron microscopy. Both the experimental and first-principles simulated results show that the aniline cation formed by aniline and H+ tends to be drawn towards the electron-enriched zone and to intercalate into the interlayer of graphite. Subsequently, an in situ polymerization leads to the separation of graphite into graphene sheet, resulting from the exothermic effect and more vigorous movements of the chain molecules of polyaniline. The interactions between polyaniline and graphene were confirmed by Fourier transform infrared spectroscopy and Raman spectra. In addition, the graphene/polyaniline hybrid exhibited a breakthrough in the improvement of

The effect of magnetic field on chiral transmission in p-n-p graphene junctions

Science.gov (United States)

Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B. A.

2015-12-01

We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green’s function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a “constriction region” of low transmission when is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

The effect of magnetic field on chiral transmission in p-n-p graphene junctions.

Science.gov (United States)

Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B A

2015-12-18

We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height V0 when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a "constriction region" of low transmission when V0 is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide

Science.gov (United States)

Butko, A. V.; Butko, V. Yu.; Lebedev, S. P.; Lebedev, A. A.; Kumzerov, Yu. A.

2017-10-01

For the creation of new promising chemical sensors, it is very important to study the influence of the interface between graphene and aqueous solutions of acids and alkalis on the transistor characteristics of graphene. Transistor structures on the basis of graphene grown by thermal decomposition of silicon carbide were created and studied. For the interface of graphene with aqueous solutions of acetic acid and potassium hydroxide in the transistor geometry, with a variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carriers in graphene was observed. It is established that an increase in the concentration of molecular ions in these solutions leads to an increase in the dependence of the resistance of the transistor on the gate voltage.

An Introduction to Graphene Plasmonics

DEFF Research Database (Denmark)

Gonçalves, P.A.D.; Peres, N. M. R.

This book is meant as an introduction to graphene plasmonics and aims at the advanced undergraduate and graduate students entering the field of plasmonics in graphene. In it different theoretical methods are introduced, starting with an elementary description of graphene plasmonics and evolving...... the chapters to get acquainted with the field of plasmonics in graphene or reading the chapters and studying the appendices to get a working knowledge of the topic. The study of the material in this book will bring the students to the forefront of the research in this field....

Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

KAUST Repository

Tian, He

2014-08-11

Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Science.gov (United States)

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

Synthesis of MnO2-graphene composites with enhanced supercapacitive performance via pulse electrodeposition under supergravity field

International Nuclear Information System (INIS)

Liu, Tingting; Shao, Guangjie; Ji, Mingtong; Wang, Guiling

2014-01-01

A method of pulse electrodeposition under supergravity field was proposed to synthesize MnO 2 -graphene composites. Supergravity is very efficient for promoting mass transfer and decreasing concentration polarization during the electrodeposition process. The synthesis was conducted on our homemade supergravity equipment. The strength of supergravity field depended on the rotating speed of the ring electrode. 3D flower like MnO 2 spheres composed of nanoflakes were acquired when the rotating speed was 3000 rpm. Graphene nanosheets play as a role of conductive substrates for MnO 2 growing. The composites are evaluated as electrode materials for supercapacitors. Electrochemical results show that the maximum specific capacitance of the MnO 2 -graphene composite is 595.7 F g −1 at a current density of 0.5 A g −1 . In addition, the composite exhibits excellent cycle stability with no capacitance attenuation after 1000 cycles. The approach provides new ideas for developing supercapacitor electrode materials with high performance. - Graphical abstract: 3D flower like MnO 2 spheres composed of nanoflakes were acquired at 3000 rpm. - Highlights: • MnO 2 -graphene composites were prepared by pulse electrodeposition under supergravity. • 3D flower like MnO 2 spheres are anchored on the graphene nanosheets. • The MnO 2 -graphene electrode exhibits a specific capacitance of 595.7 F g −1

Comparison of high-order-harmonic generation on single-layer graphene flakes with armchair and zigzag types in an intense laser field

Science.gov (United States)

Guo, Jing; Zhong, Huiying; Yan, Bing; Chen, Yi; Jiang, Yuanfei; Wang, Ting-feng; Shao, Jun-feng; Zheng, Chang-bin; Liu, Xue-Shen

2016-03-01

The high-order-harmonic generation (HHG) of graphene in an intense laser field is investigated using the strong-field approximation method. The initial wave function is presented by gaussian and gamess software. The molecular structure along the x and y axes represents different types of graphene: armchair and zigzag, respectively. The results show that the HHG intensity of the armchair type of graphene is two magnitudes higher than that of the zigzag type in the plateau area. The ionization yield and electron density distribution are also presented to further explain this difference. Finally, by superposing a properly selected range of harmonics, a main pulse with the duration of 91 and 99 attoseconds accompanied by weak satellite pulses will be generated for the case of armchair and zigzag graphene, respectively, and the corresponding intensity from armchair graphene is much higher than that from zigzag graphene.

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Science.gov (United States)

Trushin, Maxim

2018-04-01

The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

Graphene oxide reduction by microwave heating

International Nuclear Information System (INIS)

Longo, Angela; Carotenuto, Gianfranco

2016-01-01

The possibility to prepare thermal reduced graphene oxide (Tr-GO) colloidal suspensions by microwave heating of graphene oxide (GO) suspensions in N-methyl-2-pyrrolidone (NMP) has been investigated. According to transmission electron microscopy (TEM) and absorption and emission spectroscopy characterization, such a type of thermal reduction does not lead to graphene quantum dots formation because only mono-functional oxygen-containing groups are removed.

Graphene oxide reduction by microwave heating

Energy Technology Data Exchange (ETDEWEB)

Longo, Angela; Carotenuto, Gianfranco [Institute for Polymers, Composites, and Biomaterials, National Research Council, Piazzale Enrico Fermi 1, 80055 Portici (Italy)

2016-05-18

The possibility to prepare thermal reduced graphene oxide (Tr-GO) colloidal suspensions by microwave heating of graphene oxide (GO) suspensions in N-methyl-2-pyrrolidone (NMP) has been investigated. According to transmission electron microscopy (TEM) and absorption and emission spectroscopy characterization, such a type of thermal reduction does not lead to graphene quantum dots formation because only mono-functional oxygen-containing groups are removed.

Mn3O4 nanoparticles embedded into graphene nanosheets: Preparation, characterization, and electrochemical properties for supercapacitors

International Nuclear Information System (INIS)

Wang Bei; Park, Jinsoo; Wang Chengyin; Ahn, Hyojun; Wang, Guoxiu

2010-01-01

Mn 3 O 4 /graphene nanocomposites were synthesized by mixing graphene suspension in ethylene glycol with MnO 2 organosol, followed by subsequent ultrasonication processing and heat treatment. The as-prepared product consists of nanosized Mn 3 O 4 particles homogeneously distributed on graphene nanosheets, which has been confirmed by field emission scanning electron microscopy and transmission electron microscopy analysis. Atomic force microscope analysis further identified the distribution of dense Mn 3 O 4 nanoparticles on graphene nanosheets. When used as electrode materials in supercapacitors, Mn 3 O 4 /graphene nanocomposites exhibited a high specific capacitance of 175 F g -1 in 1 M Na 2 SO 4 electrolyte and 256 F g -1 in 6 M KOH electrolyte, respectively. The enhanced supercapacitance of Mn 3 O 4 /graphene nanocomposites could be ascribed to both electrochemical contributions of Mn 3 O 4 nanoparticles, functional groups attached to graphene nanosheets, and significantly increased specific surface area.

As-pyrolyzed sugarcane bagasse possessing exotic field emission properties

Science.gov (United States)

Krishnia, Lucky; Yadav, Brajesh S.; Palnitkar, Umesh; Satyam, P. V.; Gupta, Bipin Kumar; Koratkar, Nikhil A.; Tyagi, Pawan K.

2018-06-01

The present study aims to demonstrate the application of sugarcane bagasse as an excellent field emitter. Field emission property of as-pyrolyzed sugarcane bagasse (p-SBg) before and after the plasma treatment has been investigated. It has been observed that electronic nature of p-SBg transformed from semiconducting to metallic after plasma treatment. Maximum current and turn-on field defined at 10 μA/cm2 was found to be 800 μA/cm2 and 2.2 V/μm for as-pyrolyzed sugarcane bagasse (p-SBg) and 25 μA/cm2 and 8.4 V/μm for H2-plasma treated p-SBg. These values are found to be better than the reported values for graphene and activated carbon. In this report, pyrolysis of bagasse has been carried in a thermal chemical vapor deposition (Th-CVD) system in inert argon atmosphere. Scanning electron microscopy (SEM), X-ray Diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) have been used to study the structure of both pre and post plasma-treated p-SBg bagasse's sample. HRTEM study reveals that carbonaceous structures such as 3D-nanographene oxide (3D-NGO), graphite nanodots (GNDs), carbon nanotubes (CNTs), and carbon onions are present in both pre-treated and plasma-treated p-SBg. Hence, we envision that the performed study will be a forwarding step to facilitate the application of p-SBg in display devices.

Graphene rings in magnetic fields: Aharonov–Bohm effect and valley splitting

International Nuclear Information System (INIS)

Wurm, J; Wimmer, M; Richter, K; Baranger, H U

2010-01-01

We study the conductance of mesoscopic graphene rings in the presence of a perpendicular magnetic field by means of numerical calculations based on a tight-binding model. First, we consider the magnetoconductance of such rings and observe the Aharonov–Bohm effect. We investigate different regimes of the magnetic flux up to the quantum Hall regime, where the Aharonov–Bohm oscillations are suppressed. Results for both clean (ballistic) and disordered (diffusive) rings are presented. Second, we study rings with smooth mass boundary that are weakly coupled to leads. We show that the valley degeneracy of the eigenstates in closed graphene rings can be lifted by a small magnetic flux, and that this lifting can be observed in the transport properties of the system

Covalently functionalized graphene sheets with biocompatible natural amino acids

International Nuclear Information System (INIS)

Mallakpour, Shadpour; Abdolmaleki, Amir; Borandeh, Sedigheh

2014-01-01

Graphene sheets were covalently functionalized with aromatic–aliphatic amino acids (phenylalanine and tyrosine) and aliphatic amino acids (alanine, isoleucine, leucine, methionine and valine) by simple and green procedure. For this aim, at first natural graphite was converted into graphene oxide (GO) through strong oxidation procedure; then, based on the surface-exposed epoxy and carboxylic acid groups in GO solid, its surface modification with naturally occurring amino acids, occurred easily throughout the corresponding nucleophilic substitution and condensation reactions. Amino acid functionalized graphene demonstrates stable dispersion in water and common organic solvents. Fourier transform infrared, Raman and X-ray photoelectron spectroscopies, X-ray diffraction, field emission scanning electron microscopy and transmission electron microscopy were used to investigate the nanostructures and properties of prepared materials. Each amino acid has different considerable effects on the structure and morphology of the pure graphite, from increasing the layer spacing to layer scrolling, based on their structures, functional groups and chain length. In addition, therogravimetric analysis was used for demonstrating a successful grafting of amino acid molecules to the surface of graphene.

Study on IR Properties of Reduced Graphene Oxide

Science.gov (United States)

Ma, Deyue; Li, Xiaoxia; Guo, Yuxiang; Zeng, Yurun

2018-01-01

Firstly, the reduced graphene oxide was prepared by modified hummer method and characterized. Then, the complex refractive index of reduced graphene oxide in IR band was tested and its IR absorption and radiation properties were researched by correlated calculation. The results show that reduced graphene oxide prepared by hummer method are multilayered graphene with defects and functional groups on its surface. Its absorption in near and far IR bands is strong, but it’s weaker in middle IR band. At the IR atmosphere Window, its normal spectral emissivity decreases with wavelength increasing, and its total normal spectral emissivity in 3 ∼ 5μm and 8 ∼ 14μm are 0.75 and 0.625, respectively. Therefore, reduced graphene oxide can be used as IR absorption and coating materials and have a great potential in microwave and infrared compatible materials.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

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Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Direct growth of cobalt aluminum double hydroxides on graphene nanosheets and the capacitive properties of the resulting composites

International Nuclear Information System (INIS)

Kim, Yuna; Kim, Seok

2015-01-01

We synthesized graphene nanosheets (GNs)/cobalt aluminum (CoAl) double hydroxide composites through a layer-by-layer deposition process while varying the concentration of the graphene precursor used. The CoAl layered double hydroxide particles were uniformly distributed on the surfaces of the graphene layers and effectively prevented the agglomeration of the GNs, resulting in a higher reactive surface area and easier ion transport. We employed X-ray diffraction analysis, energy-dispersive X-ray spectroscopy, field-emission scanning electron microscopy, and field-emission transmission electron microscopy to investigate the microstructures and morphologies of the composites. In addition, cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge/discharge measurements were performed to analyze the electrochemical behaviors of the composites. The as-prepared composites showed desirable electrochemical characteristics, including high specific capacitances, low resistances, and high cycling stabilities. In particular, the composite formed by optimizing the GNs/CoAl ratio (the electrolyte used was a 6 M aqueous KOH solution) exhibited the maximum specific capacitance, which was 974 F g −1

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Science.gov (United States)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Directory of Open Access Journals (Sweden)

Yunkang Cui

2017-12-01

Full Text Available In this paper, a facile method to fabricate the flexible field emission devices (FEDs based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD, selected area electron diffraction (SAED and energy dispersive X-ray spectrometer (EDX, while the morphology was revealed by field emission scanning electron microscopy (SEM and high resolution transmission electron microscopy (HRTEM. The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm and threshold field (∼3.26 V/μm, and the high field enhancement factor (β=4670. It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

Science.gov (United States)

Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

2017-12-01

In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

nanostructured without patterning the graphene itself. This method produces graphene nanostructures with atomically smooth edges that ultimately determine the transport properties of these structures. The coherent collection of papers in this special issue of Journal of Physics D: Applied Physics provides a snapshot of the current state of the art, presented by leading experts, highlighting various aspects of the science and technology of epitaxial graphene. This collection systematically addresses the production of epitaxial graphene on the two polar faces of silicon carbide, as well as the structural and electronic properties of the graphene films. Special attention is paid to the rapidly emerging field of chemically modified graphene, which promises to introduce a bandgap into the electronic structure of graphene, which is critical for many electronic applications. Also presented are methods to incorporate properties of the silicon carbide itself, as well as advanced methods to produce high-quality graphene and graphene nanostructures using structured growth methods.

Marshmallowing of nanopillar arrays by field emission

International Nuclear Information System (INIS)

Park, J; Qin, H; Kim, H-S; Blick, R H

2009-01-01

We have fabricated mechanically flexible field electron emitters formed by highly-doped silicon nanopillars on a silicon membrane. Electron beam induced deposition of carbon-based contaminants is employed to probe the spatial activity of electron emission from the nanopillars. The experimental configuration provides a powerful tool to investigate the physics of the field electron emission (FEE). In contrast to the general assumption that field emission only occurs at the tips of nanoscale emitters, we found that the emission from the nanopillars' sidewalls is as strong as from their tips.

Field emission from a single nanomechanical pillar

International Nuclear Information System (INIS)

Kim, Hyun S; Qin Hua; Westphall, Michael S; Smith, Lloyd M; Blick, Robert H

2007-01-01

We measured field emission from a silicon nanopillar mechanically oscillating between two electrodes. The pillar has a height of about 200 nm and a diameter of 50 nm, allowing resonant mechanical excitations at radio frequencies. The tunnelling barriers for field emission are mechanically modulated via displacement of the gold island on top of the pillar. We present a rich frequency-dependent response of the emission current in the frequency range of 300-400 MHz at room temperature. Modified Fowler-Nordheim field emission is observed and attributed to the mechanical oscillations of the nanopillar

Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

2015-01-05

Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

Science.gov (United States)

Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

2018-03-01

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

EDITORIAL: Special issue on Graphene Special issue on Graphene

Science.gov (United States)

Morpurgo, Alberto F.; Trauzettel, Björn

2010-03-01

Since the revolutionary experimental discovery of graphene in the year 2004, research on this new two-dimensional carbon allotrope has progressed at a spectacular pace. The impact of graphene on different areas of research— including physics, chemistry, and applied sciences— is only now starting to be fully appreciated. There are different factors that make graphene a truly impressive system. Regarding nano-electronics and related fields, for instance, it is the exceptional electronic and mechanical properties that yield very high room-temperature mobility values, due to the particular band structure, the material `cleanliness' (very low-concentration of impurities), as well as its stiffness. Also interesting is the possibility to have a high electrical conductivity and optical transparency, a combination which cannot be easily found in other material systems. For other fields, other properties could be mentioned, many of which are currently being explored. In the first years following this discovery, research on graphene has mainly focused on the fundamental physics aspects, triggered by the fact that electrons in graphene behave as Dirac fermions due to their interaction with the ions of the honeycomb lattice. This direction has led to the discovery of new phenomena such as Klein tunneling in a solid state system and the so-called half-integer quantum Hall effect due to a special type of Berry phase that appears in graphene. It has also led to the appreciation of thicker layers of graphene, which also have outstanding new properties of great interest in their own right (e.g., bilayer graphene, which supports chiral quasiparticles that, contrary to Dirac electrons, are not massless). Now the time is coming to deepen our knowledge and improve our control of the material properties, which is a key aspect to take one step further towards applications. The articles in the Semiconductor Science and Technology Graphene special issue deal with a diversity of topics

Spin current pumped by a rotating magnetic field in zigzag graphene nanoribbons

International Nuclear Information System (INIS)

Wang, J; Chan, K S

2010-01-01

We study electron spin resonance in zigzag graphene nanoribbons by applying a rotating magnetic field on the system without any bias. By using the nonequilibrium Green's function technique, the spin-resolved pumped current is explicitly derived in a rotating reference frame. The pumped spin current density increases with the system size and the intensity of the transverse rotating magnetic field. For graphene nanoribbons with an even number of zigzag chains, there is a nonzero pumped charge current in addition to the pumped spin current owing to the broken spatial inversion symmetry of the system, but its magnitude is much smaller than the spin current. The short-ranged static disorder from either impurities or defects in the ribbon can depress the spin current greatly due to the localization effect, whereas the long-ranged disorder from charge impurities can avoid inter-valley scattering so that the spin current can survive in the strong disorder for the single-energy mode.

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

Science.gov (United States)

Goswami, Partha

2018-03-01

We calculate the electronic band dispersion of graphene monolayer on a two-dimensional transition metal dichalcogenide substrate (GrTMD) around K and K^' } points by taking into account the interplay of the ferromagnetic impurities and the substrate-induced interactions. The latter are (strongly enhanced) intrinsic spin-orbit interaction (SOI), the extrinsic Rashba spin-orbit interaction (RSOI) and the one related to the transfer of the electronic charge from graphene to substrate. We introduce exchange field ( M) in the Hamiltonian to take into account the deposition of magnetic impurities on the graphene surface. The cavalcade of the perturbations yield particle-hole symmetric band dispersion with an effective Zeeman field due to the interplay of the substrate-induced interactions with RSOI as the prime player. Our graphical analysis with extremely low-lying states strongly suggests the following: The GrTMDs, such as graphene on WY2, exhibit (direct) band-gap narrowing / widening (Moss-Burstein (MB) gap shift) including the increase in spin polarisation ( P) at low temperature due to the increase in the exchange field ( M) at the Dirac points. The polarisation is found to be electric field tunable as well. Finally, there is anticrossing of non-parabolic bands with opposite spins, the gap closing with same spins, etc. around the Dirac points. A direct electric field control of magnetism at the nanoscale is needed here. The magnetic multiferroics, like BiFeO3 (BFO), are useful for this purpose due to the coupling between the magnetic and electric order parameters.

Electronic properties of phosphorene and graphene nanoribbons with edge vacancies in magnetic field

Science.gov (United States)

Smotlacha, J.; Pincak, R.

2018-03-01

The graphene and phosphorene nanostructures have a big potential application in a large area of today's research in physics. However, their methods of synthesis still don't allow the production of perfect materials with an intact molecular structure. In this paper, the occurrence of atomic vacancies was considered in the edge structure of the zigzag phosphorene and graphene nanoribbons. For different concentrations of these edge vacancies, their influence on the metallic properties was investigated. The calculations were performed for different sizes of the unit cell. Furthermore, for a smaller size, the influence of a uniform magnetic field was added.

Kinks and antikinks of buckled graphene: A testing ground for the φ4 field model

Science.gov (United States)

Yamaletdinov, R. D.; Slipko, V. A.; Pershin, Y. V.

2017-09-01

Kinks and antikinks of the classical φ4 field model are topological solutions connecting its two distinct ground states. Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and φ4 model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a kink-antikink pair. Several features of the φ4 model have been observed including the kink-antikink capture at low energies, kink-antikink reflection at high energies, and a bounce resonance. Our results pave the way towards the experimental observation of a rich variety of φ4 model predictions based on graphene.

The Preparation of Graphene

Institute of Scientific and Technical Information of China (English)

Chen Yanyan

2015-01-01

Graphene has unique structure and possesses excellent physical and chemical properties, and it has received a great deal of attention in related research fields. The quality, quantity and application of graphene are related to its preparation methods. At present the bottleneck of graphene research is that both high-quality and large quantity of graphene could not be obtained simultaneously and the reason is that the basic mechanism of graphene formation has mot been wel understood.

Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

International Nuclear Information System (INIS)

Wang, Yu

2014-01-01

We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

Valley-polarized quantum transport generated by gauge fields in graphene

Science.gov (United States)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

Directory of Open Access Journals (Sweden)

Hatef Sadeghi

2013-01-01

Full Text Available Our focus in this study is on characterizing the capacitance voltage (C-V behavior of Bernal stacking bilayer graphene (BG and trilayer graphene (TG as the channel of FET devices. The analytical models of quantum capacitance (QC of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Marshmallowing of nanopillar arrays by field emission

International Nuclear Information System (INIS)

Qin Hua; Kim, Hyun-Seok; Blick, Robert H.

2010-01-01

We fabricated nanoscale field electron emitters formed by highly-doped silicon nanopillars on a silicon membrane. Electron-beam induced deposition of carbon-based contaminants is employed as a probe of the spatial activity of electron emission from the nanopillars. In stark contrast to the general assumption that field emission only occurs at the tips of nanoscale emitters, we found strong emission from the sidewalls of the nanopillars. This is revealed by the deposition of carbon contaminants on these sidewalls, so that the nanopillars finally resemble marshmallows. We conclude that field emission from nanostructured surfaces is more intricate than previously expected.

Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

International Nuclear Information System (INIS)

El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

2014-01-01

A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V t shift (4 V) at low operating voltage (6/−6 V), good retention (>10 yr), and good endurance characteristic (>10 4 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V t shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V t shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ≥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

Influence of copper foil polycrystalline structure on graphene anisotropic etching

Energy Technology Data Exchange (ETDEWEB)

Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-01-30

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Influence of copper foil polycrystalline structure on graphene anisotropic etching

International Nuclear Information System (INIS)

Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

2017-01-01

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Optical emission spectroscopic study of Ar/H2/CH4 plasma during the production of graphene nano-flakes by induction plasma synthesis

International Nuclear Information System (INIS)

Mohanta, Antaryami; Lanfant, Briac; Asfaha, Mehari; Leparoux, Marc

2017-01-01

Graphene nano-flakes using CH 4 precursor were synthesized in a radio frequency inductively coupled plasma reactor with in-situ investigation of Ar/H 2 /CH 4 plasma by optical emission spectroscopy at fixed H 2 and Ar flow rates of 4 and 75 slpm, respectively, and at different plate powers (12 to 18 kW), pressures (400 to 700 mbar) and CH 4 flow rates (0.3 to 2 slpm). Emissions from C 2 Swan band, C 3 , CH and H 2 are observed in the optical emission spectra of Ar/H 2 /CH 4 plasma. Plasma temperature estimated analyzing the C 2 Swan band emission intensities is found to be decreased with increasing pressure and decreasing plate power. The decreasing plasma temperature gives rise to increase in production rate due to increase in condensation process. The production rate is observed to be increased from 0 to 0.3 g/h at 18 kW and from 0 to 1 g/h at 15 kW with increase in pressure from 400 to 700 mbar at fixed CH 4 flow rate of 0.7 slpm. Broad band continuum emission appears in the emission spectra at specific growth conditions in which the formation of vapor phase nanoparticles due to condensation of supersaturated vapor is facilitated. The production rate at 12 kW, 700 mbar, and 0.7 slpm of CH 4 flow rate is found to be 1.7 g/h which is more than that at 15 and 18 kW. Thus, the broadband continuum emission dominates the optical emission spectra at 12 kW due to lower temperature and higher production rate, and is attributed to the emission from suspended nanoparticles formed in vapor phase. The synthesized nanoparticles exhibit flake like structures having average length and width about 200 and 100 nm, respectively, irrespective of the growth conditions. Nano-flakes have thickness between 3.7 to 7.5 nm and are composed of 11 to 22 graphene layers depending on the growth conditions. The intensity ratio (I D /I G ) of D and G band observed in the Raman spectra is less than 0.33 which indicates good quality of the synthesized graphene nano-flakes. (paper)

Graphene/SnO2 nanocomposite-modified electrode for electrochemical detection of dopamine

Directory of Open Access Journals (Sweden)

R. Nurzulaikha

2015-09-01

Full Text Available A graphene-tin oxide (G-SnO2 nanocomposite was prepared via a facile hydrothermal route using graphene oxide and Sn precursor solution without addition of any surfactant. The hydrothermally synthesized G-SnO2 nanocomposite was characterized using a field emission scanning electron microscope (FESEM, high resolution transmission electron microscope (HRTEM, X-ray diffraction (XRD, and energy dispersive spectroscopy (EDS. A homogeneous deposition of SnO2 nanoparticles with an average particle size of 10 nm on the graphene was observed in the FESEM and HRTEM images. The G-SnO2 nanocomposite was used to fabricate a modified electrode for the electrochemical detection of dopamine (DA in the presence of ascorbic acid (AA. Differential pulse voltammetry (DPV showed a limit of detection (LoD of 1 μM (S/N = 3 in the presence of ascorbic acid (AA. Keywords: Graphene, Tin oxide, Nanocomposite, Electrochemical sensor, Biosensor, Dopamine

Hydrothermal synthesis of TiO2-ZnO-graphene nanocomposite towards photocatalytic and photovoltaic applications

Science.gov (United States)

Gayathri, S.; Jayabal, P.; Ramakrishnan, V.

2015-06-01

Titanium dioxide (TiO2) - Zinc oxide (ZnO) - Graphene (G) nanocomposite was successfully synthesized through facile hydrothermal method. The X-ray diffraction (XRD) pattern and the micro-Raman spectroscopic technique revealed the formation of TiO2-ZnO-Graphene (TZG) nanocomposite. The ZnO and TiO2 nanoparticles decorated graphene sheets were clearly noticeable in the Field Emission Scanning Electron Micrograph (FE-SEM). The UV-Visible absorption spectra clearly indicated that the formation of TZG nanocomposite enriched the absorption in the visible region. Hence, the prepared nanocomposite can be used as photocatalyst to remove organic dyes from water and as photoanode in the fabrication of dye sensitized solar cells (DSSCs).

Hydrothermal synthesis of TiO2-ZnO-graphene nanocomposite towards photocatalytic and photovoltaic applications

International Nuclear Information System (INIS)

Gayathri, S.; Jayabal, P.; Ramakrishnan, V.

2015-01-01

Titanium dioxide (TiO 2 ) - Zinc oxide (ZnO) - Graphene (G) nanocomposite was successfully synthesized through facile hydrothermal method. The X-ray diffraction (XRD) pattern and the micro-Raman spectroscopic technique revealed the formation of TiO 2 -ZnO-Graphene (TZG) nanocomposite. The ZnO and TiO 2 nanoparticles decorated graphene sheets were clearly noticeable in the Field Emission Scanning Electron Micrograph (FE-SEM). The UV-Visible absorption spectra clearly indicated that the formation of TZG nanocomposite enriched the absorption in the visible region. Hence, the prepared nanocomposite can be used as photocatalyst to remove organic dyes from water and as photoanode in the fabrication of dye sensitized solar cells (DSSCs)

Photosensitive graphene transistors.

Science.gov (United States)

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

Science.gov (United States)

Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

2014-06-24

Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

Wave packet revivals in a graphene quantum dot in a perpendicular magnetic field

International Nuclear Information System (INIS)

Torres, J. J.; Romera, E.

2010-01-01

We study the time evolution of localized wave packets in graphene quantum dots in a perpendicular magnetic field, focusing on the quasiclassical and revival periodicities, for different values of the magnetic field intensities in a theoretical framework. We have considered contributions of the two inequivalent points in the Brillouin zone. The revival time has been found as an observable that shows the break valley degeneracy.

Electron field emission from boron doped microcrystalline diamond

International Nuclear Information System (INIS)

Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

2007-01-01

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

Pulsar Emission Geometry and Accelerating Field Strength

Science.gov (United States)

DeCesar, Megan E.; Harding, Alice K.; Miller, M. Coleman; Kalapotharakos, Constantinos; Parent, Damien

2012-01-01

The high-quality Fermi LAT observations of gamma-ray pulsars have opened a new window to understanding the generation mechanisms of high-energy emission from these systems, The high statistics allow for careful modeling of the light curve features as well as for phase resolved spectral modeling. We modeled the LAT light curves of the Vela and CTA I pulsars with simulated high-energy light curves generated from geometrical representations of the outer gap and slot gap emission models. within the vacuum retarded dipole and force-free fields. A Markov Chain Monte Carlo maximum likelihood method was used to explore the phase space of the magnetic inclination angle, viewing angle. maximum emission radius, and gap width. We also used the measured spectral cutoff energies to estimate the accelerating parallel electric field dependence on radius. under the assumptions that the high-energy emission is dominated by curvature radiation and the geometry (radius of emission and minimum radius of curvature of the magnetic field lines) is determined by the best fitting light curves for each model. We find that light curves from the vacuum field more closely match the observed light curves and multiwavelength constraints, and that the calculated parallel electric field can place additional constraints on the emission geometry

Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor

Science.gov (United States)

Banadaki, Yaser M.; Srivastava, Ashok; Sharifi, Safura

2016-04-01

Graphene has been extensively investigated as a promising material for various types of high performance sensors due to its large surface-to-volume ratio, remarkably high carrier mobility, high carrier density, high thermal conductivity, extremely high mechanical strength and high signal-to-noise ratio. The power density and the corresponding die temperature can be tremendously high in scaled emerging technology designs, urging the on-chip sensing and controlling of the generated heat in nanometer dimensions. In this paper, we have explored the feasibility of a thin oxide graphene nanoribbon (GNR) as nanometer-size temperature sensor for detecting local on-chip temperature at scaled bias voltages of emerging technology. We have introduced an analytical model for GNR FET for 22nm technology node, which incorporates both thermionic emission of high-energy carriers and band-to-band-tunneling (BTBT) of carriers from drain to channel regions together with different scattering mechanisms due to intrinsic acoustic phonons and optical phonons and line-edge roughness in narrow GNRs. The temperature coefficient of resistivity (TCR) of GNR FET-based temperature sensor shows approximately an order of magnitude higher TCR than large-area graphene FET temperature sensor by accurately choosing of GNR width and bias condition for a temperature set point. At gate bias VGS = 0.55 V, TCR maximizes at room temperature to 2.1×10-2 /K, which is also independent of GNR width, allowing the design of width-free GNR FET for room temperature sensing applications.

Preparation of graphene by using an intense cavitation field in a pressurized ultrasonic reactor

Czech Academy of Sciences Publication Activity Database

Štengl, Václav

2012-01-01

Roč. 18, č. 44 (2012), s. 14047-14054 ISSN 0947-6539 Institutional support: RVO:61388980 Keywords : cavitation field * graphene * nanostructures * ultrasound * X-ray diffraction Subject RIV: CA - Inorganic Chemistry Impact factor: 5.831, year: 2012

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

Science.gov (United States)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

International Nuclear Information System (INIS)

Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

2015-01-01

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

2015-08-17

Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

Magnetic field mediated conductance oscillation in graphene p–n junctions

Science.gov (United States)

Cheng, Shu-Guang

2018-04-01

The electronic transport of graphene p–n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus magnetic field shows a Shubnikov–de Haas oscillation. At higher magnetic field, the p–n junction subjected to the quasi-classical regime and the formation of snake states results in periodical backscattering and transmission as magnetic field varies. The conductance oscillation pattern is mediated both by magnetic field and the carrier concentration on bipolar regions. For medium magnetic field between above two regimes, the combined contributions of resonant tunneling, snake states oscillation and Aharanov–Bohm interference induce irregular oscillation of conductance. At very high magnetic field, the system is subjected to quantum Hall regime. Under disorder, the quantum tunneling at low magnetic field is slightly affected and the oscillation of snake states at higher magnetic field is suppressed. In the quantum Hall regime, the conductance is a constant as predicted by the mixture rule.

Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots

Directory of Open Access Journals (Sweden)

Noor-Ul-Ain

2016-11-01

Full Text Available Tuning the emission energy of graphene quantum dots (GQDs and understanding the reason of tunability is essential for the GOD function in optoelectronic devices. Besides material-based challenges, the way to realize chemical doping and band gap tuning also pose a serious challenge. In this study, we tuned the emission energy of GQDs by substitutional doping using chlorine, nitrogen, boron, sodium, and potassium dopants in solution form. Photoluminescence data obtained from (Cl- and N-doped GQDs and (B-, Na-, and K-doped GQDs, respectively exhibited red- and blue-shift with respect to the photoluminescence of the undoped GQDs. X-ray photoemission spectroscopy (XPS revealed that oxygen functional groups were attached to GQDs. We qualitatively correlate red-shift of the photoluminescence with the oxygen functional groups using literature references which demonstrates that more oxygen containing groups leads to the formation of more defect states and is the reason of observed red-shift of luminescence in GQDs. Further on, time resolved photoluminescence measurements of Cl- and N-GQDs demonstrated that Cl substitution in GQDs has effective role in radiative transition whereas in N-GQDs leads to photoluminescence (PL quenching with non-radiative transition to ground state. Presumably oxidation or reduction processes cause a change of effective size and the bandgap.

Light-assisted recharging of graphene quantum dots in fluorographene matrix

Energy Technology Data Exchange (ETDEWEB)

Antonova, I. V. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov Street 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Popov, V. I.; Smagulova, S. A. [North - East Federal University, Yakutsk (Russian Federation)

2014-10-07

In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70 nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

Electrostatic and magnetic fields in bilayer graphene

Science.gov (United States)

Jellal, Ahmed; Redouani, Ilham; Bahlouli, Hocine

2015-08-01

We compute the transmission probability through rectangular potential barriers and p-n junctions in the presence of a magnetic and electric fields in bilayer graphene taking into account contributions from the full four bands of the energy spectrum. For energy E higher than the interlayer coupling γ1 (E >γ1) two propagation modes are available for transport giving rise to four possible ways for transmission and reflection coefficients. However, when the energy is less than the height of the barrier the Dirac fermions exhibit transmission resonances and only one mode of propagation is available for transport. We study the effect of the interlayer electrostatic potential denoted by δ and variations of different barrier geometry parameters on the transmission probability.

Realization of size controllable graphene micro/nanogap with a micro/nanowire mask method for organic field-effect transistors

DEFF Research Database (Denmark)

Liao, Zhiyu; Wan, Qing; Liu, Huixuan

2011-01-01

with the graphene micro/nanogap bottom electrodes. The ultrathin thickness of the graphene, combined with its good compatibility with organic semiconductors, and high electrical conductivity produced high-performance CuPc film device with mobility at 0.053 cm(2)/Vs and on/off ratio at 10(5), showing promising......A size controllable graphene micro/nanogap fabrication method using micro/nanowire as mask is presented. The gap dimension can be adjusted by the diameter of the mask wire. As a typical application, copper phthalocyanine (CuPc) film organic field-effect transistors (OFETs) were fabricated...

Hydrothermal synthesis of TiO{sub 2}-ZnO-graphene nanocomposite towards photocatalytic and photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Gayathri, S., E-mail: s.gayathri1010@gmail.com; Jayabal, P. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625021 (India); Ramakrishnan, V. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625021 (India); Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram-695016 (India)

2015-06-24

Titanium dioxide (TiO{sub 2}) - Zinc oxide (ZnO) - Graphene (G) nanocomposite was successfully synthesized through facile hydrothermal method. The X-ray diffraction (XRD) pattern and the micro-Raman spectroscopic technique revealed the formation of TiO{sub 2}-ZnO-Graphene (TZG) nanocomposite. The ZnO and TiO{sub 2} nanoparticles decorated graphene sheets were clearly noticeable in the Field Emission Scanning Electron Micrograph (FE-SEM). The UV-Visible absorption spectra clearly indicated that the formation of TZG nanocomposite enriched the absorption in the visible region. Hence, the prepared nanocomposite can be used as photocatalyst to remove organic dyes from water and as photoanode in the fabrication of dye sensitized solar cells (DSSCs)

Knife-edge thin film field emission cathodes

International Nuclear Information System (INIS)

Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

1993-01-01

Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

Electronic orbital angular momentum and magnetism of graphene

Energy Technology Data Exchange (ETDEWEB)

Luo, Ji, E-mail: ji.luo@upr.edu

2014-10-01

Orbital angular momentum (OAM) of graphene electrons in a perpendicular magnetic field is calculated and corresponding magnetic moment is used to investigate the magnetism of perfect graphene. Variation in magnetization demonstrates its decrease with carrier-doping, plateaus in a large field, and de Haas–van Alphen oscillation. Regulation of graphene's magnetism by a parallel electric field is presented. The OAM originates from atomic-scale electronic motion in graphene lattice, and vector hopping interaction between carbon atomic orbitals is the building element. A comparison between OAM of graphene electrons, OAM of Dirac fermions, and total angular momentum of the latter demonstrates their different roles in graphene's magnetism. Applicability and relation to experiments of the results are discussed. - Highlights: • Orbital angular momentum of graphene electrons is calculated. • Orbital magnetic moment of graphene electrons is obtained. • Variation in magnetization of graphene is calculated. • Roles of different kinds of angular momentum are investigated.

Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

International Nuclear Information System (INIS)

Wang Huanwen; Hu Zhongai; Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying

2010-01-01

This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 o C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g -1 (based on composite) is obtained at a specific current of 1 A g -1 as compared with 71 F g -1 for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g -1 even at 10 A g -1 . In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

Energy Technology Data Exchange (ETDEWEB)

Wang Huanwen [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Hu Zhongai, E-mail: zhongai@nwnu.edu.c [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China)

2010-12-01

This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 {sup o}C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g{sup -1} (based on composite) is obtained at a specific current of 1 A g{sup -1} as compared with 71 F g{sup -1} for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g{sup -1} even at 10 A g{sup -1}. In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

Improved electrochemical performance of Li4Ti5O12 with a variable amount of graphene as a conductive agent for rechargeable lithium-ion batteries by solvothermal method

International Nuclear Information System (INIS)

Rai, Alok Kumar; Gim, Jihyeon; Kang, Sung-Won; Mathew, Vinod; Anh, Ly Tuan; Kang, Jungwon; Song, Jinju; Paul, Baboo Joseph; Kim, Jaekook

2012-01-01

We report on the solvothermal preparation of pure Li 4 Ti 5 O 12 and Li 4 Ti 5 O 12 /graphene (15 wt% and 30 wt%) nanocomposites anode for high-performance lithium-ion batteries. Structure and morphology studies of the nanocomposites by X-ray diffraction, field-emission scanning electron microscopy and field-emission transmission electron microscopy reveal Li 4 Ti 5 O 12 nanoparticles embedded onto the graphene nanosheets. On comparison to pure spinel Li 4 Ti 5 O 12 , the electrochemical performances of the Li 4 Ti 5 O 12 /graphene nanocomposites indicate higher capacities and enhanced cycle performances within the voltage domain of 1.0–2.5 V, under current rates as high as 10.4 C. The production of phase pure Li 4 Ti 5 O 12 nanoparticles ensures the short ion-diffusion paths while the presence of graphene facilitates improved structural network and hence enhanced electronic transport in the prepared nanocomposites. These factors eventually amount to impressive electrochemical properties. Highlights: ► A simple polyol-based approach to obtain the graphene nanosheets. ► Li 4 Ti 5 O 12 /graphene nanocomposites synthesis by polyol-based solvothermal process. ► Low temperature solvothermal strategy is one-step process to control nanoparticle sizes. ► The nanoparticles are well anchored onto the graphene nanosheets in the nanocomposites. ► Li 4 Ti 5 O 12 /graphene nanocomposites exhibit impressive electrochemical performances.

Graphene Field-Effect Transistors for the Sensitive and Selective Detection of Escherichia coli Using Pyrene-Tagged DNA Aptamer.

Science.gov (United States)

Wu, Guangfu; Dai, Ziwen; Tang, Xin; Lin, Zihong; Lo, Pik Kwan; Meyyappan, M; Lai, King Wai Chiu

2017-10-01

This study reports biosensing using graphene field-effect transistors with the aid of pyrene-tagged DNA aptamers, which exhibit excellent selectivity, affinity, and stability for Escherichia coli (E. coli) detection. The aptamer is employed as the sensing probe due to its advantages such as high stability and high affinity toward small molecules and even whole cells. The change of the carrier density in the probe-modified graphene due to the attachment of E. coli is discussed theoretically for the first time and also verified experimentally. The conformational change of the aptamer due to the binding of E. coli brings the negatively charged E. coli close to the graphene surface, increasing the hole carrier density efficiently in graphene and achieving electrical detection. The binding of negatively charged E. coli induces holes in graphene, which are pumped into the graphene channel from the contact electrodes. The carrier mobility, which correlates the gate voltage to the electrical signal of the APG-FETs, is analyzed and optimized here. The excellent sensing performance such as low detection limit, high sensitivity, outstanding selectivity and stability of the graphene biosensor for E. coli detection paves the way to develop graphene biosensors for bacterial detection. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MnO2-Graphene Oxide-PEDOT:PSS Nanocomposite for an Electrochemical Supercapacitor

Science.gov (United States)

Patil, Dipali S.; Pawar, Sachin A.; Shin, Jae Cheol; Kim, Hyo Jin

2018-04-01

A ternary nanocomposite with poly (3,4 ethylene dioxythiophene:poly(styrene sulfonate) (PEDOT:PSS)-MnO2 nanowires-graphene oxide (PMn-GO) was synthesized by using simple chemical route. The formation of the nanocomposite was analyzed by using X-ray diffraction and X-ray photoelectron spectroscopy. Field-emission scanning microscopy (FESEM) revealed the formation of MnO2 nanowires and graphene oxide nanosheets. The highest specific capacitance (areal capacitance) of 841 Fg -1 (177 mFcm -2) at 10 mVs -1 and energy density of 0.593 kWhkg -1 at 0.5 mA were observed for PMn-GO, indicating a constructive synergistic effect of PEDOT:PSS, MnO2 nanowires and graphene oxide. The achieved promising electrochemical characteristics showed that this ternary nanocomposite is a good alternative as an electrode material for supercapacitor.

Study of field emission phenomena

International Nuclear Information System (INIS)

Ramanathan, Devaki; Vijendran, P.

1976-01-01

The theory of field emission has been explained, using Fowler-Nordheim equation and the Fowler-Nordheim plot. The imaging theory is also described in brief. The fabrication details of a field emission microscope (FEM) are mentioned. The design of the tube and the emitter assemblies are explained in detail. Simple experiments that can be demonstrated on the FEM such as indexing, detetermination of work function and surface diffusion constants, etc. are also mentioned. The use of FEM as a simple teaching aid has been brought out. (K.B.)

Fluorescent biosensors enabled by graphene and graphene oxide.

Science.gov (United States)

Zhang, Huan; Zhang, Honglu; Aldalbahi, Ali; Zuo, Xiaolei; Fan, Chunhai; Mi, Xianqiang

2017-03-15

During the past few years, graphene and graphene oxide (GO) have attracted numerous attentions for the potential applications in various fields from energy technology, biosensing to biomedical diagnosis and therapy due to their various functionalization, high volume surface ratio, unique physical and electrical properties. Among which, graphene and graphene oxide based fluorescent biosensors enabled by their fluorescence-quenching properties have attracted great interests. The fluorescence of fluorophore or dye labeled on probes (such as molecular beacon, aptamer, DNAzymes and so on) was quenched after adsorbed on to the surface of graphene. While in the present of the targets, due to the strong interactions between probes and targets, the probes were detached from the surface of graphene, generating dramatic fluorescence, which could be used as signals for detection of the targets. This strategy was simple and economy, together with great programmable abilities of probes; we could realize detection of different kinds of species. In this review, we first briefly introduced the history of graphene and graphene oxide, and then summarized the fluorescent biosensors enabled by graphene and GO, with a detailed account of the design mechanism and comparison with other nanomaterials (e.g. carbon nanotubes and gold nanoparticles). Following that, different sensing platforms for detection of DNAs, ions, biomolecules and pathogens or cells as well as the cytotoxicity issue of graphene and GO based in vivo biosensing were further discussed. We hope that this review would do some help to researchers who are interested in graphene related biosening research work. Copyright © 2016 Elsevier B.V. All rights reserved.

Study of magnetic properties of graphene nanostructures and graphene nanoribbons

Directory of Open Access Journals (Sweden)

F Fazileh

2012-03-01

Full Text Available The discovery of graphene and its remarkable electronic and magnetic properties has initiated great research interest in this material. Furthermore, there are many derivatives in these graphene related materials among which graphene nanoribbons and graphene nanofragments are candidates for future carbon-based nanoelectronics and spintronics. Theoretical studies have shown that magnetism can arise in various situations such as point defects, disorder and reduced dimensionality. Using a mean field Hubbard model, we studied the appearance of magnetic textures in zero-dimensional graphene nanofragments and one-dimensional graphene zigzag nanoribbons. Among nanofragments, triangular shape, bowtie and coronene were studied. We explain how the shape of these materials, the imbalance in the number of atoms belonging to the graphene sublattices, the existence of zero-energy states and the total and local magnetic moments were related. At the end, we focused on the effects of a model disorder potential (Anderson-type, and illustrate how density of states of zigzag nanoribbons was affected.

An introduction to graphene plasmonics

CERN Document Server

Goncalves, P A D

2016-01-01

This book is meant as an introduction to graphene plasmonics and aims at the advanced undergraduate and graduate students entering the field of plasmonics in graphene. In it different theoretical methods are introduced, starting with an elementary description of graphene plasmonics and evolving towards more advanced topics. This book is essentially self-contained and brings together a number of different topics about the field that are scattered in the vast literature. The text is composed of eleven chapters and of a set of detailed appendices. It can be read in two different ways: Reading only the chapters to get acquainted with the field of plasmonics in graphene or reading the chapters and studying the appendices to get a working knowledge of the topic. The study of the material in this book will bring the students to the forefront of the research in this field.

Anisotropic spin relaxation in graphene

NARCIS (Netherlands)

Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

2008-01-01

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

Defect driven tailoring of colossal dielectricity of Reduced Graphene Oxide

Energy Technology Data Exchange (ETDEWEB)

Sarkar, S.; Mondal, A. [Department of Physics, Jadavpur University, Kolkata 700 032 (India); Dey, K. [Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032 (India); Ray, R., E-mail: juphyruma@gmail.com [Department of Physics, Jadavpur University, Kolkata 700 032 (India)

2016-02-15

Highlights: • Reduced graphene oxides (RGO) are prepared by two chemical routes. • Defects in RGO are characterized by Raman, FTIR and XPS studies. • Defects tailor colossal dielectricity in RGO. - Abstract: Reduced graphene oxide (RGO) is prepared in two different chemical routes where reduction of graphene oxide is performed by hydrazine hydrate and through high pressure in hydrothermal reactor. Samples are characterized by X-ray powdered diffraction (XRD), thermo gravimetric analysis (TGA), field emission scanning electron microscopy (FESEM) and tunneling electron microscopy (TEM). Types of defects are probed by Raman, FTIR spectroscopy and X-ray photoelectron spectroscopy (XPS). UV–vis absorption reveals different optical band gaps of the two RGOs. Conductivity mechanism is studied through I–V measurements displaying different characteristic features which are addressed due to the presence of defects appeared in different synthesis. Significantly high value (∼10{sup 4}) of dielectric permittivity at 10 MHz is attractive for technological application which could be tuned by the defects present in RGO.

Preparation and electrochemical characterization of MnOOH nanowire-graphene oxide

International Nuclear Information System (INIS)

Wang Lin; Wang Dianlong

2011-01-01

Highlights: → MnOOH nanowire-graphene oxide composites are prepared by hydrothermal reaction in distilled water or 5% ammonia aqueous solution at 130 deg. C, with MnO 2 -graphene oxide composites which are synthesized by a redox reaction between KMnO 4 and graphene oxide. → MnO 2 is deoxidized to MnOOH on graphene oxide through hydrothermal reaction without any extra reductants. → It is found that the electrochemical resistance of MnOOH nanowire-graphene oxide composites decreases and the capacitance increases to 76 F g -1 when hydrothermal reaction is conducted in ammonia aqueous solution. → MnOOH nanowire-graphene oxide composites prepared by hydrothermal reaction in 5% ammonia aqueous solution have excellent capacitance retention ratio at scan rate from 5 mV s -1 to 40 mV s -1 . - Abstract: MnOOH nanowire-graphene oxide composites are prepared by hydrothermal reaction in distilled water or 5% ammonia aqueous solution at 130 deg. C with MnO 2 -graphene oxide composites which are synthesized by a redox reaction between KMnO 4 and graphene oxide. Powder X-ray diffraction (XRD) analyses and energy dispersive X-ray analyses (EDAX) show MnO 2 is deoxidized to MnOOH on graphene oxide through hydrothermal reaction without any extra reductants. The electrochemical capacitance of MnOOH nanowire-graphene oxide composites prepared in 5% ammonia aqueous solution is 76 F g -1 at current density of 0.1 A g -1 . Moreover, electrochemical impedance spectroscopy (EIS) suggests the electrochemical resistance of MnOOH nanowire-graphene oxide composites is reduced when hydrothermal reaction is conducted in ammonia aqueous solution. The relationship between the electrochemical capacitance and the structure of MnOOH nanowire-graphene oxide composites is characterized by cyclic voltammetry (CV) and field emission scanning electron microscopy (FESEM). The results indicate the electrochemical performance of MnOOH nanowire-graphene oxide composites strongly depends on their

Synthesis of Tb_4O_7 complexed with reduced graphene oxide for Rhodamine-B absorption

International Nuclear Information System (INIS)

Gao, Hui; Zhou, Yang; Chen, Keqin; Li, Xiaolong

2016-01-01

Highlights: • Tb–rGO composite was fabricated via a facile thermally reduction process. • The green and blue emissions were both observed in the composite. • The composite exhibited efficient absorption capability for Rhodamine-B. - Abstract: Tb_4O_7 complexed with reduced graphene oxide composite (Tb–rGO) had been designed and fabricated by a facile thermal reduction method. The formation of Tb_4O_7 particles and reduction of graphene oxide (GO) occurred simultaneously, and partial terbium ions would be complexed with rGO via oxygen-containing function groups on rGO sheets. Introducing of terbium ions could effectively tune the photoluminescence properties of rGO, and the composite exhibited the typical green emission of terbium ions as well as the blue self-luminescence of graphene entered at 440 nm. Moreover, Tb–rGO had demonstrated its high capability as an organic dye (Rhodamine-B) scavenger with high speed and efficiency. The findings showed the promising applications for large-scale removal of organic dye contaminants, especially in the field of waste water treatment.

Prospective for graphene based thermal mid-infrared light emitting devices

Science.gov (United States)

Lawton, L. M.; Mahlmeister, N. H.; Luxmoore, I. J.; Nash, G. R.

2014-08-01

We have investigated the spatial and spectral characteristics of mid-infrared thermal emission from large area Chemical Vapor Deposition (CVD) graphene, transferred onto SiO2/Si, and show that the emission is broadly that of a grey-body emitter, with emissivity values of approximately 2% and 6% for mono- and multilayer graphene. For the currents used, which could be sustained for over one hundred hours, the emission peaked at a wavelength of around 4 μm and covered the characteristic absorption of many important gases. A measurable modulation of thermal emission was obtained even when the drive current was modulated at frequencies up to 100 kHz.

Prospective for graphene based thermal mid-infrared light emitting devices

Directory of Open Access Journals (Sweden)

L. M. Lawton

2014-08-01

Full Text Available We have investigated the spatial and spectral characteristics of mid-infrared thermal emission from large area Chemical Vapor Deposition (CVD graphene, transferred onto SiO2/Si, and show that the emission is broadly that of a grey-body emitter, with emissivity values of approximately 2% and 6% for mono- and multilayer graphene. For the currents used, which could be sustained for over one hundred hours, the emission peaked at a wavelength of around 4 μm and covered the characteristic absorption of many important gases. A measurable modulation of thermal emission was obtained even when the drive current was modulated at frequencies up to 100 kHz.

Near-field heat transfer between graphene/hBN multilayers

OpenAIRE

Zhao, Bo; Guizal, Brahim; Zhang, Zhuomin M.; Fan, Shanhui; Antezza, Mauro

2017-01-01

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with a hyperbolic phonon polaritons in a single hBN film to form hybrid polaritons that can assist photon tunneling. For periodic multilayer graphene/hBN structures, the stacked metallic/dielectric array can give rise to a further effective hyperbolic behavior, in addition to the intri...

Mn{sub 3}O{sub 4} nanoparticles embedded into graphene nanosheets: Preparation, characterization, and electrochemical properties for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Wang Bei [School of Mechanical, Materials and Mechatronic Engineering and Institute for Superconducting and Electronic Materials, University of Wollongong, NSW 2522 (Australia)] [Department of Chemistry and Forensic Science, University of Technology, Sydney, City Campus, Broadway, Sydney, NSW 2007 (Australia); Park, Jinsoo [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwa-dong, Jinju, Gyeongnam 660 -701 (Korea, Republic of); Wang Chengyin [Department of Chemistry and Forensic Science, University of Technology, Sydney, City Campus, Broadway, Sydney, NSW 2007 (Australia); Ahn, Hyojun [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwa-dong, Jinju, Gyeongnam 660 -701 (Korea, Republic of); Wang, Guoxiu, E-mail: Guoxiu.Wang@uts.edu.a [School of Mechanical, Materials and Mechatronic Engineering and Institute for Superconducting and Electronic Materials, University of Wollongong, NSW 2522 (Australia)] [Department of Chemistry and Forensic Science, University of Technology, Sydney, City Campus, Broadway, Sydney, NSW 2007 (Australia)

2010-09-01

Mn{sub 3}O{sub 4}/graphene nanocomposites were synthesized by mixing graphene suspension in ethylene glycol with MnO{sub 2} organosol, followed by subsequent ultrasonication processing and heat treatment. The as-prepared product consists of nanosized Mn{sub 3}O{sub 4} particles homogeneously distributed on graphene nanosheets, which has been confirmed by field emission scanning electron microscopy and transmission electron microscopy analysis. Atomic force microscope analysis further identified the distribution of dense Mn{sub 3}O{sub 4} nanoparticles on graphene nanosheets. When used as electrode materials in supercapacitors, Mn{sub 3}O{sub 4}/graphene nanocomposites exhibited a high specific capacitance of 175 F g{sup -1} in 1 M Na{sub 2}SO{sub 4} electrolyte and 256 F g{sup -1} in 6 M KOH electrolyte, respectively. The enhanced supercapacitance of Mn{sub 3}O{sub 4}/graphene nanocomposites could be ascribed to both electrochemical contributions of Mn{sub 3}O{sub 4} nanoparticles, functional groups attached to graphene nanosheets, and significantly increased specific surface area.

Electronic transport in graphene; Elektronischer Transport in Graphen

Energy Technology Data Exchange (ETDEWEB)

Lohmann, Timm

2010-06-08

In 2004 graphene, a monolayer of carbon atoms, has been isolated as the first real two-dimensional solid by the group of A. Geim at the University of Manchester. Graphene's properties have been theoretically investigated since the 1950s. Until the successful preparation by Geim et al., graphene was suspected to be unstable under ambient conditions above 0 K (Mermin-Wagner theorem). Its two dimensionality and hexagonal lattice symmetry cause interesting novel properties and effects. At experimentally relevant energies, graphene has a linear band structure and charge carrier dynamics must be treated using Dirac's equation. Therefore charge carriers in graphene are called ''Dirac fermions''. Beside exotic effects like ''Klein tunneling'' an unconventional quantum Hall effect (QHE) can be observed with a Hall conductance quantized in units of 2e{sup 2}/h, 6e{sup 2}/h, 10e{sup 2}/h, 14e{sup 2}/h. As a starting point for in-depth transport measurements the processing of graphene field effect transistors (GFETs) has been developed and optimized, based on the pioneering work by Novoselov et al. The optimized process provides samples with carrier mobilities up to 16000 cm{sup 2}/Vs and a well defined Hall geometry. These samples are used to investigate external influences on the electronic properties of graphene. Among those influences molecular adsorbates are responsible for various effects of freshly prepared graphene samples e.g. an intrinsic p-doping, a mobility asymmetry of electrons and holes, the so called ''minimal conductivity'' and a field effect hysteresis at room temperature. In collaboration with the group of A. Yacoby (Harvard) density fluctuations in the vicinity of the Dirac point (''electron-hole puddles'') could be observed using a scanning single electron transistor (SSET). These fluctuations might be one reason for the ''minimal conductivity'' at

Adsorption and diffusion of lithium in a graphene/blue-phosphorus heterostructure and the effect of an external electric field.

Science.gov (United States)

Fan, Kaimin; Tang, Jing; Wu, Shiyun; Yang, Chengfu; Hao, Jiabo

2016-12-21

The adsorption and diffusion behaviors of lithium (Li) in a graphene/blue-phosphorus (G/BP) heterostructure have been investigated using a first principles method based on density functional theory (DFT). The effect of an external electric field on the adsorption and diffusion behaviors has also been investigated. The results show that the adsorption energy of Li on the graphene side of the G/BP heterostructure is higher than that on monolayer graphene, and Li adsorption on the BP side of the G/BP/Li system is slightly stronger than that on monolayer BP (BP/Li). The adsorption energy of Li reaches 2.47 eV, however, the energy barriers of Li diffusion decrease in the interlayer of the G/BP heterostructure. The results mentioned above suggest that the rate performance of the G/BP heterostructure is better than that of monolayer graphene. Furthermore, the adsorption energies of Li atoms in the three different most stable sites, i.e., H G , T P and H 1 sites, increase by about 0.49 eV, 0.26 eV, and 0.13 eV, respectively, as the electric field intensity reaches 0.6 V Å -1 . The diffusion energy barrier is significantly decreased by an external electric field. It is demonstrated that the external electric field can not only enhance the adsorption but can also modulate the diffusion barriers of Li atoms in the G/BP heterostructure.

Nonlinear terahertz conductivity in graphene

DEFF Research Database (Denmark)

Mics, Zoltán; Bonn, Mischa; Tielrooij, Klaas Jan

2013-01-01

Graphene is a unique conductor, where charge is transported by massless carriers. Remarkably, the THz response of carriers strongly depends on the driving field.......Graphene is a unique conductor, where charge is transported by massless carriers. Remarkably, the THz response of carriers strongly depends on the driving field....

Graphene-Wrapped Ni(OH)2 Hollow Spheres as Novel Electrode Material for Supercapacitors.

Science.gov (United States)

Sun, Jinfeng; Wang, Jinqing; Li, Zhangpeng; Ou, Junfei; Niu, Lengyuan; Wang, Honggang; Yang, Shengrong

2015-09-01

Graphene-wrapped Ni(OH)2 hollow spheres were prepared via electrostatic interaction between poly(diallyldimethylammonium chloride) (PDDA) modified Ni(OH)2 and graphene oxide (GO) in an aqueous dispersion, followed by the reduction of GO. Morphological and structural analysis by field-emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and thermogravimetric analysis confirmed the successful coating of graphene on Ni(OH)2 hollow spheres with a content of 3.8 wt%. And then its application as electrode material for supercapacitor has been investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. Results show that the sample displays a high capacitance of 1368 F g(-1) at a current density of 1 A g(-1), much better than that of pure Ni(OH)2, illustrating that such composite is a promising candidate as electrode material for supercapacitors.

An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

International Nuclear Information System (INIS)

Chen, Chih-Sheng; Hsieh, Chien-Kuo

2014-01-01

In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily

An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Chih-Sheng; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

2014-11-03

In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily.

Electrochemical and safety characteristics of TiP2O7–graphene nanocomposite anode for rechargeable lithium-ion batteries

International Nuclear Information System (INIS)

Rai, Alok Kumar; Gim, Jihyeon; Song, Jinju; Mathew, Vinod; Anh, Ly Tuan; Kim, Jaekook

2012-01-01

This paper reports a co-precipitation synthesis of TiP 2 O 7 –graphene (10 wt%) nanocomposite and pure TiP 2 O 7 nanoparticles for the use as an advanced anode material for high performance lithium-ion batteries. The structure and morphology of the compounds are characterized by powder X-ray diffraction, field-emission scanning electron microscopy and field-emission transmission electron microscopy techniques. The electrochemical performances were evaluated in coin type Li-ion test cells. This TiP 2 O 7 –graphene nanocomposite displayed superior Li-ion battery performance with a large reversible capacity, excellent cyclic performance and good rate capability at a current density of 0.1 mA cm −2 . At an elevated current density of 6.4 mA cm −2 , the nanocomposite anode delivered a capacity of 98.4 mAh g −1 , which is much higher than that of pure TiP 2 O 7 (0.56 mAh g −1 ). The impressive electrochemical performance of the nanocomposite was ascribed to the synergistic effect of the high surface area nanoparticles in conjunction with the good electronic conductivity of graphene. The graphene nanosheets not only provide an electronically conducting network, but also tend to prevent the aggregation of the high surface area TiP 2 O 7 nanoparticles. Further, the graphene nanosheets can act as buffer layers to accommodate the volume change during the Li-ion insertion/extraction processes in the TiP 2 O 7 nanoparticles.

Self-assembled hierarchical graphene/polyaniline hybrid aerogels for electrochemical capacitive energy storage

International Nuclear Information System (INIS)

Yang, Fan; Xu, Maowen; Bao, Shu-Juan; Wei, Hua; Chai, Hui

2014-01-01

In this work, polyaniline nanowires (PANI-NWs) act as spacers, incorporated with graphene oxide and self-assembled into graphene/PANI hybrid aerogels through a facile hydrothermal route. The as-synthesized samples have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectra, X-ray photoelectron spectroscopy (XPS), contact angle measurement, field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) for their microstructure, morphology and relative affinities toward water. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements have been used to study the effects of composition, microstructure and morphology of the samples on their capacitive performance. The experimental results indicate that the PANI can effectively tailor the microstructures and electrochemical performances of the products. The as-prepared materials with an appropriate proportion of PANI nanowires can efficiently prevent the adjacent graphene sheets from aggregation and provide fast ionic channels for electrochemical energy storage. A specific capacitance of 520.3 F g −1 has been achieved from graphene/PANI hybrid aerogel, which also exhibits excellent cycling stability

Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

Science.gov (United States)

Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

2014-04-01

High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

Graphene plasmonics: physics and potential applications

Directory of Open Access Journals (Sweden)

Huang Shenyang

2016-10-01

Full Text Available Plasmon in graphene possesses many unique properties. It originates from the collective motion of massless Dirac fermions, and the carrier density dependence is distinctively different from conventional plasmons. In addition, graphene plasmon is highly tunable and shows strong energy confinement capability. Most intriguingly, as an atom-thin layer, graphene and its plasmon are very sensitive to the immediate environment. Graphene plasmons strongly couple to polar phonons of the substrate, molecular vibrations of the adsorbates, and lattice vibrations of other atomically thin layers. In this review, we present the most important advances in graphene plasmonics field. The topics include terahertz plasmons, mid-infrared plasmons, plasmon-phonon interactions, and potential applications. Graphene plasmonics opens an avenue for reconfigurable metamaterials and metasurfaces; it is an exciting and promising new subject in the nanophotonics and plasmonics research field.

Nonequilibrium excitations and transport of Dirac electrons in electric-field-driven graphene

Science.gov (United States)

Li, Jiajun; Han, Jong E.

2018-05-01

We investigate nonequilibrium excitations and charge transport in charge-neutral graphene driven with dc electric field by using the nonequilibrium Green's-function technique. Due to the vanishing Fermi surface, electrons are subject to nontrivial nonequilibrium excitations such as highly anisotropic momentum distribution of electron-hole pairs, an analog of the Schwinger effect. We show that the electron-hole excitations, initiated by the Landau-Zener tunneling with a superlinear I V relation I ∝E3 /2 , reaches a steady state dominated by the dissipation due to optical phonons, resulting in a marginally sublinear I V with I ∝E , in agreement with recent experiments. The linear I V starts to show the sign of current saturation as the graphene is doped away from the Dirac point, and recovers the semiclassical relation for the saturated velocity. We give a detailed discussion on the nonequilibrium charge creation and the relation between the electron-phonon scattering rate and the electric field in the steady-state limit. We explain how the apparent Ohmic I V is recovered near the Dirac point. We propose a mechanism where the peculiar nonequilibrium electron-hole creation can be utilized in a infrared device.

Field-emission from quantum-dot-in-perovskite solids.

Science.gov (United States)

García de Arquer, F Pelayo; Gong, Xiwen; Sabatini, Randy P; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

2017-03-24

Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 10 12 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.

Characterization of spatial manipulation on ZnO nanocomposites consisting of Au nanoparticles, a graphene layer, and ZnO nanorods

Science.gov (United States)

Huang, Shen-Che; Lu, Chien-Cheng; Su, Wei-Ming; Weng, Chen-Yuan; Chen, Yi-Cian; Wang, Shing-Chung; Lu, Tien-Chang; Chen, Ching-Pang; Chen, Hsiang

2018-01-01

Three types of ZnO-based nanocomposites were fabricated consisting of 80-nm Au nanoparticles (NPs), a graphene layer, and ZnO nanorods (NRs). To investigate interactions between the ZnO NRs and Au nanoparticle, multiple material analysis techniques including field-emission scanning electron microscopy (FESEM), surface contact angle measurements, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopic characterizations were performed. Results indicate that incorporating a graphene layer could block the interaction between the ZnO NRs and the Au NPs. Furthermore, the Raman signal of the Au NPs could be enhanced by inserting a graphene layer on top of the ZnO NRs. Investigation of these graphene-incorporated nanocomposites would be helpful to future studies of the physical properties and Raman analysis of the ZnO-based nanostructure design.

Impact of substrate on performance of band gap engineered graphene field effect transistor

Science.gov (United States)

Tiwari, Durgesh Laxman; Sivasankaran, K.

2018-01-01

In this paper, we investigate the graphene field effect transistor (G-FET) to enhance the drain current saturation and to minimize the drain conductance (gd) using numerical simulation. This work focus on suppressing the drain conductance using silicon substrate. We studied the impact of different substrate on the performance of band gap engineered G-FET device. We used a non-equilibrium green function with mode space (NEGF_MS) to model the transport behavior of carriers for 10 nm channel length G-FET device. We compared the drain current saturation of G-FET at higher drain voltage regime on silicon, SiC, and the SiO2 substrate. This paper clearly demonstrates the effect of substrate on an electric field near drain region of G-FET device. It is shown that the substrate of G-FET is not only creating a band gap in graphene, which is important for current saturation and gd minimization, but also selection of suitable substrate can suppress generation of carrier concentration near drain region is also important.

Field emission of carbon nanotubes grown on nickel substrate

International Nuclear Information System (INIS)

Hu Yemin; Huo Kaifu; Chen Hong; Lu Yinong; Xu Li; Hu Zheng; Chen Yi

2006-01-01

Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler-Nordheim (F-N) theory from the straight line of ln(I/V 2 ) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E to ) and high emission current density indicates the potential applications of this new CNT-based emitter

Graphene-based field effect transistor in two-dimensional paper networks

Energy Technology Data Exchange (ETDEWEB)

Cagang, Aldrine Abenoja; Abidi, Irfan Haider; Tyagi, Abhishek [Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Hu, Jie; Xu, Feng [Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an 710049 (China); The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi' an Jiaotong University, Xi' an 710049 (China); Lu, Tian Jian [Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an 710049 (China); Luo, Zhengtang, E-mail: keztluo@ust.hk [Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)

2016-04-21

We demonstrate the fabrication of a graphene-based field effect transistor (GFET) incorporated in a two-dimensional paper network format (2DPNs). Paper serves as both a gate dielectric and an easy-to-fabricate vessel for holding the solution with the target molecules in question. The choice of paper enables a simpler alternative approach to the construction of a GFET device. The fabricated device is shown to behave similarly to a solution-gated GFET device with electron and hole mobilities of ∼1256 cm{sup 2} V{sup −1} s{sup −1} and ∼2298 cm{sup 2} V{sup −1} s{sup −1} respectively and a Dirac point around ∼1 V. When using solutions of ssDNA and glucose it was found that the added molecules induce negative electrolytic gating effects shifting the conductance minimum to the right, concurrent with increasing carrier concentrations which results to an observed increase in current response correlated to the concentration of the solution used. - Highlights: • A graphene-based field effect transistor sensor was fabricated for two-dimensional paper network formats. • The constructed GFET on 2DPN was shown to behave similarly to solution-gated GFETs. • Electrolyte gating effects have more prominent effect over adsorption effects on the behavior of the device. • The GFET incorporated on 2DPN was shown to yield linear response to presence of glucose and ssDNA soaked inside the paper.

Graphene-based field effect transistor in two-dimensional paper networks

International Nuclear Information System (INIS)

Cagang, Aldrine Abenoja; Abidi, Irfan Haider; Tyagi, Abhishek; Hu, Jie; Xu, Feng; Lu, Tian Jian; Luo, Zhengtang

2016-01-01

We demonstrate the fabrication of a graphene-based field effect transistor (GFET) incorporated in a two-dimensional paper network format (2DPNs). Paper serves as both a gate dielectric and an easy-to-fabricate vessel for holding the solution with the target molecules in question. The choice of paper enables a simpler alternative approach to the construction of a GFET device. The fabricated device is shown to behave similarly to a solution-gated GFET device with electron and hole mobilities of ∼1256 cm 2  V −1  s −1 and ∼2298 cm 2  V −1  s −1 respectively and a Dirac point around ∼1 V. When using solutions of ssDNA and glucose it was found that the added molecules induce negative electrolytic gating effects shifting the conductance minimum to the right, concurrent with increasing carrier concentrations which results to an observed increase in current response correlated to the concentration of the solution used. - Highlights: • A graphene-based field effect transistor sensor was fabricated for two-dimensional paper network formats. • The constructed GFET on 2DPN was shown to behave similarly to solution-gated GFETs. • Electrolyte gating effects have more prominent effect over adsorption effects on the behavior of the device. • The GFET incorporated on 2DPN was shown to yield linear response to presence of glucose and ssDNA soaked inside the paper.

Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

International Nuclear Information System (INIS)

Boscá, A.; Pedrós, J.; Martínez, J.; Calle, F.

2015-01-01

Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process

Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

Energy Technology Data Exchange (ETDEWEB)

Boscá, A., E-mail: alberto.bosca@upm.es [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Pedrós, J. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Campus de Excelencia Internacional, Campus Moncloa UCM-UPM, Madrid 28040 (Spain); Martínez, J. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ciencia de Materiales, E.T.S.I de Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Calle, F. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Campus de Excelencia Internacional, Campus Moncloa UCM-UPM, Madrid 28040 (Spain)

2015-01-28

Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process.

Facile longitudinal unzipping of carbon nanotubes to graphene nanoribbons and their effects on LiMn2O4 cathodes in rechargeable lithium-ion batteries

International Nuclear Information System (INIS)

Ilango, P. Robert; Prasanna, K.; Subburaj, T.; Jo, Yong Nam; Lee, Chang Woo

2015-01-01

Highlights: • The graphene nanoribbons are successfully synthesized by chemical unzipping method. • The LiMn 2 O 4 is surface modified with graphene nanoribbons via ultrasonic-assisted wet-coating. • The electrochemical effects of graphene nanoribbons on LiMn 2 O 4 are studied. • The modified LiMn 2 O 4 shows the good electronic conductivity and improved capacity. - Abstract: A LiMn 2 O 4 cathode has been surface-modified with carbon nanotubes and graphene nanoribbons via an ultrasonic-assisted wet-coating method. The structural stability of the surface-modified LiMn 2 O 4 and the amorphous nature of the coated carbon materials are confirmed using X-ray diffraction (XRD). Field emission scanning electron microscopy (FE-SEM) reveals the strong and uniform distribution of graphene nanoribbons over the LiMn 2 O 4 in comparison to the carbon nanotubes-coated LiMn 2 O 4 . Furthermore, field emission transmission electron microscopy (FE-TEM) confirms the strong adhesion of a smooth, sheet-like graphene nanoribbons layer over the LiMn 2 O 4 surface, whereas the carbon nanotubes are observed to have weak and/or irregular contact with LiMn 2 O 4 . Electrochemical studies have been carried out by electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), and a galvanostatic cycler. The graphene nanoribbons-modified LiMn 2 O 4 cathode shows better electrochemical properties in terms of a suppressed charge transfer resistance, high current density, negative shift in polarization, longer calendar life, and high rate capabilities. In addition, the graphene nanoribbons-modified LiMn 2 O 4 delivered 90% of the retention capacity after 50 cycles at a rate of 1 C with the potential limits of 3.0–4.5 V vs. Li/Li + .

Graphene electrodes for n-type organic field-effect transistors

DEFF Research Database (Denmark)

Henrichsen, Henrik Hartmann; Boggild, P.

2010-01-01

This work presents a convenient and contamination safe E-beam lithography process for microstructuring of graphene flakes. Exfoliated graphene flakes were deposited on oxidized silicon wafers and subsequently patterned by E-beam lithography, to be used as source and drain electrodes in an organic...

Promising applications of graphene and graphene-based nanostructures

Science.gov (United States)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-06-01

The present article is a review of research works on promising applications of graphene and graphene-based nanostructures. It contains five main scientific subjects. The first one is the research on graphene-based transparent and flexible conductive films for displays and electrodes: efficient method ensuring uniform and controllable deposition of reduced graphene oxide thin films over large areas, large-scale pattern growth of graphene films for stretchble transparent electrodes, utilization of graphene-based transparent conducting films and graphene oxide-based ones in many photonic and optoelectronic devices and equipments such as the window electrodes of inorganic, organic and dye-sensitized solar cells, organic light-emitting diodes, light-emitting electrochemical cells, touch screens, flexible smart windows, graphene-based saturated absorbers in laser cavities for ultrafast generations, graphene-based flexible, transparent heaters in automobile defogging/deicing systems, heatable smart windows, graphene electrodes for high-performance organic field-effect transistors, flexible and transparent acoustic actuators and nanogenerators etc. The second scientific subject is the research on conductive inks for printed electronics to revolutionize the electronic industry by producing cost-effective electronic circuits and sensors in very large quantities: preparing high mobility printable semiconductors, low sintering temperature conducting inks, graphene-based ink by liquid phase exfoliation of graphite in organic solutions, and developing inkjet printing technique for mass production of high-quality graphene patterns with high resolution and for fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin-film transistors and micro supercapacitors. The third scientific subject is the research on graphene-based separation membranes: molecular dynamics simulation study on the mechanisms of the transport of

Introducing lattice strain to graphene encapsulated in hBN

Science.gov (United States)

Tomori, Hikari; Hiraide, Rineka; Ootuka, Youiti; Watanabe, Kenji; Taniguchi, Takashi; Kanda, Akinobu

Due to the characteristic lattice structure, lattice strain in graphene produces an effective gauge field. Theories tell that by controlling spatial variation of lattice strain, one can tailor the electronic state and transport properties of graphene. For example, under uniaxial local strain, graphene exhibits a transport gap at low energies, which is attractive for a graphene application to field effect devices. Here, we develop a method for encapsulating a strained graphene film in hexagonal boron-nitride (hBN). It is known that the graphene carrier mobility is significantly improved by the encapsulation of graphene in hBN, which has never been applied to strained graphene. We encapsulate graphene in hBN using the van der Waals assembly method. Strain is induced by sandwiching a graphene film between patterned hBN sheets. Spatial variation of strain is confirmed with micro Raman spectroscopy. Transport measurement of encapsulated strained graphene is in progress.

Electron field emission for ultrananocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

2001-03-01

Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

Synthesis of Tb{sub 4}O{sub 7} complexed with reduced graphene oxide for Rhodamine-B absorption

Energy Technology Data Exchange (ETDEWEB)

Gao, Hui, E-mail: hope@lzu.edu.cn [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhou, Yang; Chen, Keqin [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Li, Xiaolong, E-mail: lixiaolong@sinap.ac.cn [Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204 (China)

2016-05-15

Highlights: • Tb–rGO composite was fabricated via a facile thermally reduction process. • The green and blue emissions were both observed in the composite. • The composite exhibited efficient absorption capability for Rhodamine-B. - Abstract: Tb{sub 4}O{sub 7} complexed with reduced graphene oxide composite (Tb–rGO) had been designed and fabricated by a facile thermal reduction method. The formation of Tb{sub 4}O{sub 7} particles and reduction of graphene oxide (GO) occurred simultaneously, and partial terbium ions would be complexed with rGO via oxygen-containing function groups on rGO sheets. Introducing of terbium ions could effectively tune the photoluminescence properties of rGO, and the composite exhibited the typical green emission of terbium ions as well as the blue self-luminescence of graphene entered at 440 nm. Moreover, Tb–rGO had demonstrated its high capability as an organic dye (Rhodamine-B) scavenger with high speed and efficiency. The findings showed the promising applications for large-scale removal of organic dye contaminants, especially in the field of waste water treatment.

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

International Nuclear Information System (INIS)

Joung, Daeha; Chunder, A; Zhai, Lei; Khondaker, Saiful I

2010-01-01

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 deg. C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm 2 V -1 s -1 respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.

Extreme sensitivity of graphene photoconductivity to environmental gases.

Science.gov (United States)

Docherty, Callum J; Lin, Cheng-Te; Joyce, Hannah J; Nicholas, Robin J; Herz, Laura M; Li, Lain-Jong; Johnston, Michael B

2012-01-01

Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

Dye-sensitized solar cells using graphene-based carbon nano composite as counter electrode

Energy Technology Data Exchange (ETDEWEB)

Choi, Hyonkwang; Kim, Hyunkook; Hwang, Sookhyun; Jeon, Minhyon [Department of Nano Systems Engineering, Center of Nano Manufacturing, Inje University, Obang, Gimhae, Gyungnam 621-749 (Korea, Republic of); Choi, Wonbong [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States)

2011-01-15

We demonstrated a counter electrode in dye-sensitized solar cells (DSSCs) using the graphene-based multi-walled carbon nanotubes (GMWNTs) structure. Graphene layers were prepared by drop casting on a SiO{sub 2}/Si substrate and multi-walled carbon nanotubes (MWNTs) were synthesized on graphene layers using iron catalyst by chemical vapor deposition. The structural properties of GMWNTs were investigated by transmission electron microscope and field-emission scanning electron microscopy. The GMWNTs sheets were lifted off from the Si substrate by buffered oxide etching and were transplanted on fluorine-doped tin oxide glass by Van der Waals force as a counter electrode. From the electrochemical impedance spectroscopy and energy conversion efficiencies, electrochemical properties of GMWNTs were comparable with those of MWNTs counter electrode. The results suggested that GMWNTs were one of the candidates for a counter electrode for dye-sensitized solar cells. (author)

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

Science.gov (United States)

Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

2018-01-01

In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

Faraday rotation due to excitation of magnetoplasmons in graphene microribbons.

Science.gov (United States)

Tymchenko, Mykhailo; Nikitin, Alexey Yu; Martín-Moreno, Luis

2013-11-26

A single graphene sheet, when subjected to a perpendicular static magnetic field, provides a Faraday rotation that, per atomic layer, greatly surpasses that of any other known material. In continuous graphene, Faraday rotation originates from the cyclotron resonance of massless carriers, which allows dynamical tuning through either external electrostatic or magneto-static setting. Furthermore, the rotation direction can be controlled by changing the sign of the carriers in graphene, which can be done by means of an external electric field. However, despite these tuning possibilities, the requirement of large magnetic fields hinders the application of the Faraday effect in real devices, especially for frequencies higher than a few terahertz. In this work we demonstrate that large Faraday rotation can be achieved in arrays of graphene microribbons, through the excitation of the magnetoplasmons of individual ribbons, at larger frequencies than those dictated by the cyclotron resonance. In this way, for a given magnetic field and chemical potential, structuring graphene periodically can produce large Faraday rotation at larger frequencies than what would occur in a continuous graphene sheet. Alternatively, at a given frequency, graphene ribbons produce large Faraday rotation at much smaller magnetic fields than in continuous graphene.

GRAPHENE: A NEW MATERIAL

Directory of Open Access Journals (Sweden)

Cătălin IANCU

2011-07-01

Full Text Available The paper presents the properties of a new but allready known material – graphene. Graphene is a 2-dimensional network of carbon atoms. Are presented the estonished characteristics of this form of carbon, alongwith some interesting field of use.

Laser terahertz emission microscopy with near-field probes

DEFF Research Database (Denmark)

Pedersen, Pernille Klarskov; Mittleman, Daniel M.

2016-01-01

Using an AFM, an optical near-field image at 800 nm of a dipole antenna for THz emission is measured, and by simultaneously collecting the emitted THz radiation, the laser light confined under the AFM probe gives a THz emission resolution of less than 50 nm.......Using an AFM, an optical near-field image at 800 nm of a dipole antenna for THz emission is measured, and by simultaneously collecting the emitted THz radiation, the laser light confined under the AFM probe gives a THz emission resolution of less than 50 nm....

Graphene: from functionalization to devices

Science.gov (United States)

Tejeda, Antonio; Soukiassian, Patrick G.

2014-03-01

The year 2014 marks the first decade of the rise of graphene. Graphene, a single atomic layer of carbon atoms in sp2 bonding configuration having a honeycomb structure, has now become a well-known and well-established material. Among some of its many outstanding fundamental properties, one can mention a very high carrier mobility, a very large spin diffusion length, unsurpassed mechanical properties as graphene is the strongest material ever measured and an exceptional thermal conductivity scaling more than one order of magnitude above that of copper. After the first years of the graphene rush, graphene growth is now well controlled using various methods like epitaxial growth on silicon carbide substrate, chemical vapour deposition (CVD) or plasma techniques on metal, insulator or semiconductor substrates. More applied research is now taking over the initial studies on graphene production. Indeed, graphene is a promising material for many advanced applications such as, but not limited to, electronic, spintronics, sensors, photonics, micro/nano-electromechanical (MEMS/NEMS) systems, super-capacitors or touch-screen technologies. In this context, this Special Issue of the Journal of Physics D: Applied Physics on graphene reviews some of the recent achievements, progress and prospects in this field. It includes a collection of seventeen invited articles covering the current status and future prospects of some selected topics of strong current interest. This Special Issue is organized in four sections. The first section is dedicated to graphene devices, and opens with an article by de Heer et al on an investigation of integrating graphene devices with silicon complementary metal-oxide-semiconductor (CMOS) technology. Then, a study by Svintsov et al proposes a lateral all-graphene tunnel field-effect transistor (FET) with a high on/off current switching ratio. Next, Tsukagoshi et al present how a band-gap opening occurs in a graphene bilayer by using a perpendicular

The Field Emission Characteristics of Titanium-Doped Nano-Diamonds

Institute of Scientific and Technical Information of China (English)

YANG Yan-Ning; ZHANG Zhi-Yong; ZHANG Fu-Chun; DONG Jun-Tang; ZHAO Wu; ZHAI Chun-Xue; ZHANG Wei-Hu

2012-01-01

An electrophoresis solution,prepared in a specific ratio of titanium (Ti)-doped nano-diamond,is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis.After high-temperature vacuum annealing,the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope,scanning electron microscopy and Raman spectroscopy.The field emission characteristics and luminescence features are also tested,and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed.The experimental results show that under the same conditions,the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti powder.Compared with the undoped nano-diamond cathode,the turn-on fields decline from 6.95 to 5.95 V/μm.When the electric field strength is 13.80 V/μm,the field emission current density increases to 130.00 μA/cm2.Under the applied fields,the emission current is stable and the luminescence is at its best,while the field emission characteristics of the 10 mg Ti-doped coating become worse,as does the luminescence.The reason for this could be that an excessive amount of TiC is generated on the surface of the coating.%An electrophoresis solution, prepared in a speciGc ratio of titanium (Ti)-doped nano-diamond, is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis. After high-temperature vacuum annealing, the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope, scanning electron microscopy and Raman spectroscopy. The field emission characteristics and luminescence features are also tested, and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed. The experimental results show that under the same conditions, the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti

Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

International Nuclear Information System (INIS)

Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

2012-01-01

We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Directory of Open Access Journals (Sweden)

Tzu-Yi Yu

2017-06-01

Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

Electrically pumped graphene-based Landau-level laser

Science.gov (United States)

Brem, Samuel; Wendler, Florian; Winnerl, Stephan; Malic, Ermin

2018-03-01

Graphene exhibits a nonequidistant Landau quantization with tunable Landau-level (LL) transitions in the technologically desired terahertz spectral range. Here, we present a strategy for an electrically driven terahertz laser based on Landau-quantized graphene as the gain medium. Performing microscopic modeling of the coupled electron, phonon, and photon dynamics in such a laser, we reveal that an inter-LL population inversion can be achieved resulting in the emission of coherent terahertz radiation. The presented paper provides a concrete recipe for the experimental realization of tunable graphene-based terahertz laser systems.

The oxidized porous silicon field emission array

International Nuclear Information System (INIS)

Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

1993-01-01

The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

Electric field-induced valley degeneracy lifting in uniaxial strained graphene: evidence from magnetophonon resonance

OpenAIRE

Assili, Mohamed; Haddad, Sonia; Kang, Woun

2015-01-01

A double peak structure in the magneto-phonon resonance (MPR) spectrum of uniaxial strained graphene, under crossed electric and magnetic fields, is predicted. We focus on the $\\Gamma$ point optical phonon modes coupled to the inter-Landau level transitions $0 \\leftrightarrows \\pm 1$ where MPR is expected to be more pronounced at high magnetic field. We derive the frequency shifts and the broadenings of the longitudinal (LO) and transverse (TO) optical phonon modes taking into account the eff...

Chemical Functionalization of Graphene Family Members

Science.gov (United States)

Vacchi, Isabella Anna; Ménard-Moyon, Cécilia; Bianco, Alberto

2017-01-01

Thanks to their outstanding physicochemical properties, graphene and its derivatives are interesting nanomaterials with a high potential in several fields. Graphene, graphene oxide, and reduced graphene oxide, however, differ partially in their characteristics due to their diverse surface composition. Those differences influence the chemical reactivity of these materials. In the following chapter the reactivity and main functionalization reactions performed on graphene, graphene oxide, and reduced graphene oxide are discussed. A part is also dedicated to the main analytical techniques used for characterization of these materials. Functionalization of graphene and its derivatives is highly important to modulate their characteristics and design graphene-based conjugates with novel properties. Functionalization can be covalent by forming strong and stable bonds with the graphene surface, or non-covalent via π-π, electrostatic, hydrophobic, and/or van der Waals interactions. Both types of functionalization are currently exploited.

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Graphene-Based Flexible and Transparent Tunable Capacitors.

Science.gov (United States)

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Experimental Development of Low-emittance Field-emission Electron Sources

Energy Technology Data Exchange (ETDEWEB)

Lueangaranwong, A. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Buzzard, C. [Northern Illinois Univ., DeKalb, IL (United States); Divan, R. [Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Korampally, V. [Northern Illinois Univ., DeKalb, IL (United States); Piot, P. [Northern Illinois Univ., DeKalb, IL (United States). Northern Illinois Center for Accelerator & Detector Development; Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

2016-10-10

Field emission electron sources are capable of extreme brightness when excited by static or time-dependent electro- magnetic fields. We are currently developing a cathode test stand operating in DC mode with possibility to trigger the emission using ultra-short (~ 100-fs) laser pulses. This contribution describes the status of an experiment to investigate field-emission using cathodes under development at NIU in collaboration with the Argonne’s Center for Nanoscale Materials.

InP/ZnS-graphene oxide and reduced graphene oxide nanocomposites as fascinating materials for potential optoelectronic applications

Science.gov (United States)

Samal, Monica; Mohapatra, Priyaranjan; Subbiah, Ramesh; Lee, Chang-Lyoul; Anass, Benayad; Kim, Jang Ah; Kim, Taesung; Yi, Dong Kee

2013-09-01

Our recent studies on metal-organic nanohybrids based on alkylated graphene oxide (GO), reduced alkylated graphene oxide (RGO) and InP/ZnS core/shell quantum dots (QDs) are presented. The GO alkylated by octadecylamine (ODA) and the QD bearing a dodecane thiol (DDT) ligand are soluble in toluene. The nanocomposite alkylated-GO-QD (GOQD) is readily formed from the solution mixture. Treatment of the GOQD composite with hydrazine affords a reduced-alkylated-GO-QD (RGOQD) composite. The structure, morphology, photophysical and electrical properties of GOQDs and RGOQDs are studied. The micro-FTIR and Raman studies demonstrate evidence of the QD interaction with GO and RGO through facile intercalation of the alkyl chains. The field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) images of the GOQD composite show heaps of large QD aggregates piled underneath the GO sheet. Upon reduction to RGOQDs, the QDs become evenly distributed on the graphene bed and the size of the clusters significantly decreases. This also facilitates closer proximity of the QDs to the graphene domains by altering the optoelectronic properties of the RGOQDs. The X-ray photoelectron spectroscopy (XPS) results confirm QDs being retained in the composites, though a small elemental composition change takes place. The XPS and the fluorescence spectra show the presence of an In(Zn)P alloy while the X-ray diffraction (XRD) results show characteristics of the tetragonal indium. The photoluminescence (PL) quenching of QDs in GOQD and RGOQD films determined by the time correlated single photon counting (TCSPC) experiment demonstrates almost complete fluorescence quenching in RGOQDs. The conductance studies demonstrate the differences between GOQDs and RGOQDs. Investigation on the metal-oxide-semiconductor field-effect transistor (nMOSFET) characteristics shows the composite to exhibit p-type channel material properties. The RGOQD exhibits much

Graphene oxide-modified ZnO particles: synthesis, characterization, and antibacterial properties

Directory of Open Access Journals (Sweden)

Zhong LL

2015-08-01

Full Text Available Linlin Zhong, Kyusik Yun Department of Bionanotechnology, Gachon University, Gyeonggi-do, Republic of Korea Abstract: Nanosized ZnO particles with diameters of 15 nm were prepared with a solution precipitation method at low cost and high yield. The synthesis of the particles was functionalized by the organic solvent dimethylformamide, and the particles were covalently bonded to the surface of graphene oxide. The morphology of the graphene oxide sheets and ZnO particles was confirmed with field emission scanning electron microscopy and biological atomic force microscopy. Fourier transform infrared spectroscopy and X-ray diffraction were used to analyze the physical and chemical properties of the ZnO/graphene oxide composites that differed from those of the individual components. Enhanced electrochemical properties were detected with cyclic voltammetry, with a redox peak of the composites at 0.025 mV. Excellent antibacterial activity of ZnO/graphene oxide composites was observed with a microdilution method in which minimum inhibitory concentrations of 6.25 µg/mL for Escherichia coli and Salmonella typhimurium, 12.5 µg/mL for Bacillus subtilis, and 25 µg/mL for Enterococcus faecalis. After further study of the antibacterial mechanism, we concluded that a vast number of reactive oxygen species formed on the surface of composites, improving antibacterial properties. Keywords: graphene oxide, ZnO, characterization, antibacterial property

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

Science.gov (United States)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

2015-12-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

International Nuclear Information System (INIS)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Dae Kim, Seong; Ahn, Jong-Hyun

2015-01-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I on /I off ) of up to ∼10 3 , with a current density of 10 2 A cm −2 . We also observed significant dependence of Schottky barrier height Δφ b on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier. (paper)

Chemistry at the dirac point of graphene

Science.gov (United States)

Sarkar, Santanu

Graphene holds great potential as an electronic material because of its excellent transport properties, which derive from its unique Fermi surface and ballistic conductance. It exhibits extremely high mobility [~250,000 cm*2/(V*s)]. Despite its extraordinary properties, the absence of a band-gap in graphene makes it unsuitable for its use as an active element in conventional field effect transistors (FETs). Another problem with pristine graphene is its lack of solution processability, which inhibits it applications in numerous fields such as printed electronics, transparent conductors, nano-biodevices, and thin film technologies involving fuel cells, capacitors and solar cells. My thesis is focused on addressing theses issue by application of covalent chemistry on graphene. We have applied the Kolbe electro-oxidation strategy to achieve an efficient quasi-reversible electrochemical grafting of the naphthylmethyl radicals to graphene. The method facilitates reversible bandgap engineering in graphene and preparation of electrochemically erasable organic dielectric films. We have discovered that the zero-band-gap electronic structure of graphene enables it to function as either the diene or the dienophile in the Diels-Alder (DA) reaction, and this versatile synthetic method offers a powerful strategy for the reversible modification of the electronic properties of graphene under very mild conditions. We show that the application of the Diels-Alder (DA) chemistry to graphene, which is capable of simultaneous formation of a pair of sp3-carbon centers (balanced divacancies) in graphene, can selectively produce DA-modified graphene FET devices with mobility between 1,000-6,000 cm2V-1s-1 (with a variable range hopping transport mechanism). Most of the covalent chemistry applied on graphene leads to the change in hybridization of graphene sp2 carbon to sp3 (destructive hybridization) and the FET devices based on such covalently modified graphene shows a drastic reduction of

Negative compressibility observed in graphene containing resonant impurities

International Nuclear Information System (INIS)

Chen, X. L.; Wang, L.; Li, W.; Wang, Y.; He, Y. H.; Wu, Z. F.; Han, Y.; Zhang, M. W.; Xiong, W.; Wang, N.

2013-01-01

We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ±0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

Magnetic field oscillations of the critical current in long ballistic graphene Josephson junctions

Science.gov (United States)

Rakyta, Péter; Kormányos, Andor; Cserti, József

2016-06-01

We study the Josephson current in long ballistic superconductor-monolayer graphene-superconductor junctions. As a first step, we have developed an efficient computational approach to calculate the Josephson current in tight-binding systems. This approach can be particularly useful in the long-junction limit, which has hitherto attracted less theoretical interest but has recently become experimentally relevant. We use this computational approach to study the dependence of the critical current on the junction geometry, doping level, and an applied perpendicular magnetic field B . In zero magnetic field we find a good qualitative agreement with the recent experiment of M. Ben Shalom et al. [Nat. Phys. 12, 318 (2016), 10.1038/nphys3592] for the length dependence of the critical current. For highly doped samples our numerical calculations show a broad agreement with the results of the quasiclassical formalism. In this case the critical current exhibits Fraunhofer-like oscillations as a function of B . However, for lower doping levels, where the cyclotron orbit becomes comparable to the characteristic geometrical length scales of the system, deviations from the results of the quasiclassical formalism appear. We argue that due to the exceptional tunability and long mean free path of graphene systems a new regime can be explored where geometrical and dynamical effects are equally important to understand the magnetic field dependence of the critical current.

Rf Gun with High-Current Density Field Emission Cathode

International Nuclear Information System (INIS)

Jay L. Hirshfield

2005-01-01

High current-density field emission from an array of carbon nanotubes, with field-emission-transistor control, and with secondary electron channel multiplication in a ceramic facing structure, have been combined in a cold cathode for rf guns and diode guns. Electrodynamic and space-charge flow simulations were conducted to specify the cathode configuration and range of emission current density from the field emission cold cathode. Design of this cathode has been made for installation and testing in an existing S-band 2-1/2 cell rf gun. With emission control and modulation, and with current density in the range of 0.1-1 kA/cm2, this cathode could provide performance and long-life not enjoyed by other currently-available cathodes

Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.

Science.gov (United States)

Joiner, Corey A; Campbell, Philip M; Tarasov, Alexey A; Beatty, Brian R; Perini, Chris J; Tsai, Meng-Yen; Ready, William J; Vogel, Eric M

2016-04-06

Tunneling devices based on vertical heterostructures of graphene and other 2D materials can overcome the low on-off ratios typically observed in planar graphene field-effect transistors. This study addresses the impact of processing conditions on two-dimensional materials in a fully integrated heterostructure device fabrication process. In this paper, graphene-molybdenum disulfide-graphene tunneling heterostructures were fabricated using only large-area synthesized materials, unlike previous studies that used small exfoliated flakes. The MoS2 tunneling barrier is either synthesized on a sacrificial substrate and transferred to the bottom-layer graphene or synthesized directly on CVD graphene. The presence of graphene was shown to have no impact on the quality of the grown MoS2. The thickness uniformity of MoS2 grown on graphene and SiO2 was found to be 1.8 ± 0.22 nm. XPS and Raman spectroscopy are used to show how the MoS2 synthesis process introduces defects into the graphene structure by incorporating sulfur into the graphene. The incorporation of sulfur was shown to be greatly reduced in the absence of molybdenum suggesting molybdenum acts as a catalyst for sulfur incorporation. Tunneling simulations based on the Bardeen transfer Hamiltonian were performed and compared to the experimental tunneling results. The simulations show the use of MoS2 as a tunneling barrier suppresses contributions to the tunneling current from the conduction band. This is a result of the observed reduction of electron conduction within the graphene sheets.

Transfer-free fabrication of graphene transistors

OpenAIRE

Wessely, P.J.; Wessely, F.; Birinci, E.; Schwalke, U.; Riedinger, B.

2012-01-01

The authors invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon, a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane-based growth process, monolayer graphene field-effect transistors and...

Fundamental properties of field emission-driven direct current microdischarges

International Nuclear Information System (INIS)

Rumbach, Paul; Go, David B.

2012-01-01

For half a century, it has been known that the onset of field emission in direct current microdischarges with gap sizes less than 10 μm can lead to breakdown at applied voltages far less than predicted by Paschen's law. It is still unclear how field emission affects other fundamental plasma properties at this scale. In this work, a one-dimensional fluid model is used to predict basic scaling laws for fundamental properties including ion density, electric field due to space charge, and current-voltage relations in the pre-breakdown regime. Computational results are compared with approximate analytic solutions. It is shown that field emission provides an abundance of cathode electrons, which in turn create large ion concentrations through ionizing collisions well before Paschen's criterion for breakdown is met. Breakdown due to ion-enhanced field emission occurs when the electric field due to space charge becomes comparable to the applied electric field. Simple scaling analysis of the 1D Poisson equation demonstrates that an ion density of n + ≈ 0.1V A ε 0 /qd 2 is necessary to significantly distort the electric field. Defining breakdown in terms of this critical ion density leads analytically to a simple, effective secondary emission coefficient γ ′ of the same mathematical form initially suggested by Boyle and Kisliuk [Phys. Rev. 97, 255 (1955)].

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

Science.gov (United States)

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Graphene antidot lattice transport measurements

DEFF Research Database (Denmark)

Mackenzie, David; Cagliani, Alberto; Gammelgaard, Lene

2017-01-01

We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical...... for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices...... in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (

Modulation characteristics of graphene-based thermal emitters

Science.gov (United States)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Nanofocusing in a tapered graphene plasmonic waveguide

DEFF Research Database (Denmark)

Dai, Yunyun; Zhu, Xiaolong; Mortensen, N. Asger

2015-01-01

Gated or doped graphene can support plasmons making it a promising plasmonic material in the terahertz regime. Here, we show numerically that in a tapered graphene plasmonic waveguide mid- and far-infrared light can be focused in nanometer scales, far beyond the diffraction limit. The underlying...... physics lies in that when propagating along the direction towards the tip both the group and phase velocities of the plasmons supported by the tapered graphene waveguide are reduced accordingly, eventually leading to nanofocusing at the tip with a huge enhancement of optical fields. The nanofocusing...... of optical fields in tapered graphene plasmonic waveguides could be potentially exploited in the enhancement of light–matter interactions....

Transport properties in monolayer-bilayer-monolayer graphene planar junctions

Institute of Scientific and Technical Information of China (English)

Kai-Long Chu; Zi-Bo Wang; Jiao-Jiao Zhou; Hua Jiang

2017-01-01

The transport study of graphene based junctions has become one of the focuses in graphene research.There are two stacking configurations for monolayer-bilayer-monolayer graphene planar junctions.One is the two monolayer graphene contacting the same side of the bilayer graphene,and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene.In this paper,according to the Landauer-Büttiker formula,we study the transport properties of these two configurations.The influences of the local gate potential in each part,the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained.We find the conductances of the two configurations can be manipulated by all of these effects.Especially,one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene.The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

Energy Technology Data Exchange (ETDEWEB)

Prabhakar, Sanjay, E-mail: sprabhakar@wlu.ca [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Melnik, Roderick [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Bonilla, Luis L. [Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Raynolds, James E. [Drinker Biddle and Reath LLP, Washington, DC 20005 (United States)

2013-12-02

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

International Nuclear Information System (INIS)

Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis L.; Raynolds, James E.

2013-01-01

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges

Unidirectional plasmonically induced transparency behavior in a compact graphene-based waveguide

International Nuclear Information System (INIS)

Zhang, Zhengren; Long, Yang; Zang, Xiaofei

2017-01-01

A graphene-based waveguide structure is proposed to achieve a unidirectional plasmonically induced transparency (PIT) behavior. In this structure, a standing-wave cavity can be formed in the graphene waveguide by controlling the Fermi energy at a different part of the graphene. Two resonant graphene ribbons are placed at the node and antinode of the standing-wave cavity field, respectively. Its corresponding optical response coming from different incident sides show a unidirectional PIT behavior. This is because the excited bright resonant graphene ribbon located at antinode inhibits the field strength on its downstream side and causes the field redistribution on its upstream side. When the wave propagates along the sequence node-antinode, the redistribution field will excite the dark resonant graphene ribbon, such that both ribbons couple coherently and the PIT behavior appears. In contrast, when the wave propagates along the sequence antinode-node, the dark resonant graphene ribbon remains dark, and no PIT appears. Our results may benefit novel nonreciprocal devices in the future. (paper)

Field emission study of MWCNT/conducting polymer nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Alvi, M.A., E-mail: maalvee@yahoo.co.in [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Al-Ghamdi, A.A. [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Husain, M. [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

2014-12-01

MWCNTs/Polypyrrole nanocomposites were synthesized by solution mixing method. These synthesized nanocomposites were studied carefully by Raman Spectroscopy and Scanning Electron Microscopy measurements. The field emission study of MWCNTs/Polypyrrole nanocomposites were performed in diode arrangement under vacuum of the order of 10{sup −5} Torr. The emission current under exploration depends on applied voltage. The prepared nanocomposites depict low turn-on field at 1.4 V/μm that reaches to a maximum emission current density 0.020 mA/cm{sup 2} at 2.4 V/µm, which is calculated from the graph of current density (J) against the applied electric field (E) and from Fowler–Nordheim (F–N) plot.

In situ fabrication and characterization of cobalt ferrite nanorods/graphene composites

International Nuclear Information System (INIS)

Fu, Min; Jiao, Qingze; Zhao, Yun

2013-01-01

Cobalt ferrite nanorods/graphene composites were prepared by a one-step hydrothermal process using NaHSO 3 as the reducing agent and 1-propyl-3-hexadecylimidazolium bromide as the structure growth-directing template. The reduction of graphene oxide and the in situ formation of cobalt ferrite nanorods were accomplished in a one-step reaction. The structure and morphology of as-obtained composites were characterized by field emission scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, atomic force microscope, X-ray diffractometer, Fourier transform infrared spectra, X-ray photoelectron spectroscopy and Raman spectroscopy. Uniform rod-like cobalt ferrites with diameters of about 100 nm and length of about 800 nm were homogeneously distributed on the graphene sheets. The hybrid materials showed a saturation magnetization of 42.5 emu/g and coercivity of 495.1 Oe at room temperature. The electromagnetic parameters were measured using a vector network analyzer. A minimum reflection loss (RL) of − 25.8 dB was observed at 16.1 GHz for the cobalt ferrite nanorods/graphene composites with a thickness of 2 mm, and the effective absorption frequency (RL < − 10 dB) ranged from 13.5 to 18.0 GHz. The composites exhibited better absorbing properties than the cobalt ferrite nanorods and the mixture of cobalt ferrite nanorods and graphene. - Highlights: • Reduction of GO and formation of ferrites were accomplished in a one-step reaction. • Ionic liquid was used to control 1D growth of ferrite nanorods for the first time. • Cobalt ferrite nanorods/graphene composites showed dielectric and magnetic loss. • Cobalt ferrite nanorods/graphene composites exhibited better absorbing properties

Field emission from the surface of highly ordered pyrolytic graphite

Energy Technology Data Exchange (ETDEWEB)

Knápek, Alexandr, E-mail: knapek@isibrno.cz [Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, Brno (Czech Republic); Sobola, Dinara; Tománek, Pavel [Department of Physics, FEEC, Brno University of Technology, Technická 8, Brno (Czech Republic); Pokorná, Zuzana; Urbánek, Michal [Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, Brno (Czech Republic)

2017-02-15

Highlights: • HOPG shreds were created and analyzed in the UHV conditions. • Current-voltage measurements have been done to confirm electron tunneling, based on the Fowler-Nordheim theory. • Surface was characterized by other surface evaluation methods, in particular by: SNOM, SEM and AFM. - Abstract: This paper deals with the electrical characterization of highly ordered pyrolytic graphite (HOPG) surface based on field emission of electrons. The effect of field emission occurs only at disrupted surface, i.e. surface containing ripped and warped shreds of the uppermost layers of graphite. These deformations provide the necessary field gradients which are required for measuring tunneling current caused by field electron emission. Results of the field emission measurements are correlated with other surface characterization methods such as scanning near-field optical microscopy (SNOM) or atomic force microscopy.

Field emission from the surface of highly ordered pyrolytic graphite

International Nuclear Information System (INIS)

Knápek, Alexandr; Sobola, Dinara; Tománek, Pavel; Pokorná, Zuzana; Urbánek, Michal

2017-01-01

Highlights: • HOPG shreds were created and analyzed in the UHV conditions. • Current-voltage measurements have been done to confirm electron tunneling, based on the Fowler-Nordheim theory. • Surface was characterized by other surface evaluation methods, in particular by: SNOM, SEM and AFM. - Abstract: This paper deals with the electrical characterization of highly ordered pyrolytic graphite (HOPG) surface based on field emission of electrons. The effect of field emission occurs only at disrupted surface, i.e. surface containing ripped and warped shreds of the uppermost layers of graphite. These deformations provide the necessary field gradients which are required for measuring tunneling current caused by field electron emission. Results of the field emission measurements are correlated with other surface characterization methods such as scanning near-field optical microscopy (SNOM) or atomic force microscopy.

Effects of strain on the Schwinger pair creation in graphene

International Nuclear Information System (INIS)

Fanbanrai, P.; Hutem, A.; Boonchui, S.

2015-01-01

The effects of strain on mechanically deformed graphene are determined by looking at how the strain affects the amplitude of the Schwinger two particle pair state. The influences of the lattice distortions, such as isotropic tensile strain ϵ is , shear strain ϵ ss , uniaxial armchair strain ϵ as , and zigzag strain ϵ zs , on the photon emission spectrum have been analyzed. We find that the intensities of the emission increases or decreases when compared to those of the unstrained graphene, depending on the type of strain applied. Thus the structure of energy band, the frequencies of the photons and the emission spectrum can be controlled by use of the different strains

Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

International Nuclear Information System (INIS)

Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

2013-01-01

Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

Simultaneous tuning of electric field intensity and structural properties of ZnO: Graphene nanostructures for FOSPR based nicotine sensor.

Science.gov (United States)

Tabassum, Rana; Gupta, Banshi D

2017-05-15

We report theoretical and experimental realization of a SPR based fiber optic nicotine sensor having coatings of silver and graphene doped ZnO nanostructure onto the unclad core of the optical fiber. The volume fraction (f) of graphene in ZnO was optimized using simulation of electric field intensity. Four types of graphene doped ZnO nanostructures viz. nanocomposites, nanoflowers, nanotubes and nanofibers were prepared using optimized value of f. The morphology, photoluminescence (PL) spectra and UV-vis spectra of these nanostructures were studied. The peak PL intensity was found to be highest for ZnO: graphene nanofibers. The optimized value of f in ZnO: graphene nanofiber was reconfirmed using UV-vis spectroscopy. The experiments were performed on the fiber optic probe fabricated with Ag/ZnO: graphene layer and optimized parameters for in-situ detection of nicotine. The interaction of nicotine with ZnO: graphene nanostructures alters the dielectric function of ZnO: graphene nanostructure which is manifested in terms of shift in resonance wavelength. From the sensing signal, the performance parameters were measured including sensitivity, limit of detection (LOD), limit of quantification (LOQ), stability, repeatability and selectivity. The real sample prepared using cigarette tobacco leaves and analyzed using the fabricated sensor makes it suitable for practical applications. The achieved values of LOD and LOQ are found to be unrivalled in comparison to the reported ones. The sensor possesses additional advantages such as, immunity to electromagnetic interference, low cost, capability of online monitoring, remote sensing. Copyright © 2017 Elsevier B.V. All rights reserved.

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Field emission properties of ZnO nanosheet arrays

International Nuclear Information System (INIS)

Naik, Kusha Kumar; Rout, Chandra Sekhar; Khare, Ruchita; More, Mahendra A.; Chakravarty, Disha; Late, Dattatray J.; Thapa, Ranjit

2014-01-01

Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm 2 and current density of 50.1 μA/cm 2 at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications

Graphene-Based Flexible and Transparent Tunable Capacitors

OpenAIRE

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-01-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By...

Comment on “Theoretical analysis of high-field transport in graphene on a substrate” [J. Appl. Phys. 116, 034507 (2014)

International Nuclear Information System (INIS)

Tan, Michael L. P.; Arora, Vijay K.

2014-01-01

In a recent article, Serov et al. [J. Appl. Phys. 116, 034507 (2014)] claim: “This study represents the first time that the high-field behavior in graphene on a substrate was investigated taking into account intrinsic graphene properties,” ignoring the most recent anisotropic distribution function [V. K. Arora et al., J. Appl. Phys. 112, 114330 (2012)] also published in J. Appl. Phys., targeting the same experimental data [V. E. Dorgan et al., Appl. Phys. Lett. 97, 082112 (2010)]. The claim of Serov et al. of being first is refuted and many shortcomings of the hydrodynamic model for a highly quantum and degenerate graphene nanolayer are pointed out

Graphene Field Effect Transistors for Biomedical Applications: Current Status and Future Prospects.

Science.gov (United States)

Forsyth, Rhiannan; Devadoss, Anitha; Guy, Owen J

2017-07-26

Since the discovery of the two-dimensional (2D) carbon material, graphene, just over a decade ago, the development of graphene-based field effect transistors (G-FETs) has become a widely researched area, particularly for use in point-of-care biomedical applications. G-FETs are particularly attractive as next generation bioelectronics due to their mass-scalability and low cost of the technology's manufacture. Furthermore, G-FETs offer the potential to complete label-free, rapid, and highly sensitive analysis coupled with a high sample throughput. These properties, coupled with the potential for integration into portable instrumentation, contribute to G-FETs' suitability for point-of-care diagnostics. This review focuses on elucidating the recent developments in the field of G-FET sensors that act on a bioaffinity basis, whereby a binding event between a bioreceptor and the target analyte is transduced into an electrical signal at the G-FET surface. Recognizing and quantifying these target analytes accurately and reliably is essential in diagnosing many diseases, therefore it is vital to design the G-FET with care. Taking into account some limitations of the sensor platform, such as Debye-Hükel screening and device surface area, is fundamental in developing improved bioelectronics for applications in the clinical setting. This review highlights some efforts undertaken in facing these limitations in order to bring G-FET development for biomedical applications forward.

Graphene Field Effect Transistors for Biomedical Applications: Current Status and Future Prospects

Directory of Open Access Journals (Sweden)

Rhiannan Forsyth

2017-07-01

Full Text Available Since the discovery of the two-dimensional (2D carbon material, graphene, just over a decade ago, the development of graphene-based field effect transistors (G-FETs has become a widely researched area, particularly for use in point-of-care biomedical applications. G-FETs are particularly attractive as next generation bioelectronics due to their mass-scalability and low cost of the technology’s manufacture. Furthermore, G-FETs offer the potential to complete label-free, rapid, and highly sensitive analysis coupled with a high sample throughput. These properties, coupled with the potential for integration into portable instrumentation, contribute to G-FETs’ suitability for point-of-care diagnostics. This review focuses on elucidating the recent developments in the field of G-FET sensors that act on a bioaffinity basis, whereby a binding event between a bioreceptor and the target analyte is transduced into an electrical signal at the G-FET surface. Recognizing and quantifying these target analytes accurately and reliably is essential in diagnosing many diseases, therefore it is vital to design the G-FET with care. Taking into account some limitations of the sensor platform, such as Debye–Hükel screening and device surface area, is fundamental in developing improved bioelectronics for applications in the clinical setting. This review highlights some efforts undertaken in facing these limitations in order to bring G-FET development for biomedical applications forward.

Approach to Multifunctional Device Platform with Epitaxial Graphene on Transition Metal Oxide (Postprint)

Science.gov (United States)

2015-09-23

layers, respectively. 15. SUBJECT TERMS Heterostructures, two-dimensional materials, van der Waals interaction , 2D graphene, metal oxide (TiO2...sample holder with a 10.6 μ m CO2 IR laser . The laser output power was adjusted until the target temperature was reached. The temperature of the sample... Laser Deposited Transition- Metal Carbides for Field-Emission Cathode Coatings. ACS Appl. Mater. Interfaces 5, 9241–9246 (2013). 13. Swift, G. A

Field-controllable second harmonic generation at a graphene oxide heterointerface

Science.gov (United States)

Fernandes, Gustavo E.; Kim, Jin Ho; Osgood, Richard, III; Xu, Jimmy

2018-03-01

We report on the voltage-dependent SHG signal obtained in a reduced-graphene oxide (rGO)/p-type Si heterointerface. A simple qualitative model considering the interaction between the heterointerface depletion region potential and the naturally occurring surface dipole layer on the rGO is introduced to account for the characteristics of the SHG signal, specifically, a minimum point at ≈ -3 V bias on the rGO side of the interface. This feature-rich system has the potential to provide field-controllable surface-dipole moments and second-order nonlinearities, which may find applications in tunable nonlinear photonic devices for realizing second-harmonic generation and optical-rectification.

Effect of channel-width and chirality on graphene field-effect transistor based real-time biomolecule sensing

Science.gov (United States)

Lyu, Letian; Jaswal, Perveshwer; Xu, Guangyu

2018-03-01

Graphene field-effect transistors (GFET) hold promise in biomolecule sensing due to the outstanding properties of graphene materials. Charges in biomolecules are transduced into a change in the GFET current, which allows real-time monitoring of the biomolecule concentrations. Here we theoretically evaluate the performance of GFET based real-time biomolecule sensing, aiming to better understand the width-scaling limit in GFET based biosensors. In particular, we study the effect of the channel-width and the chirality on FET sensitivity by taking the percentage change of the FET current per unit charge density as the sensing signal. Firstly, GFETs made of graphene nanoribbons (GNR) and graphene sheets (GS) show comparable sensing signals to each other when gated at 1011 - 1012 cm-2 carrier densities. Sensing signals in GNRs are enhanced when gated near the sub-band thresholds, and increase their values in wider GNRs due to the change in device conductance and quantum capacitance. Secondly, the GNR chirality is found to fine tune the sensing signals. Armchair GNRs with smaller energy bandgaps appear to have an enhanced sensing signal close to 1011 cm-2 carrier densities. These results may help understand the scaling limit in GFET based biosensors along the width direction, and shed light on forming all-electrical bio-arrays.

Effect of channel-width and chirality on graphene field-effect transistor based real-time biomolecule sensing

Directory of Open Access Journals (Sweden)

Letian Lyu

2018-03-01

Full Text Available Graphene field-effect transistors (GFET hold promise in biomolecule sensing due to the outstanding properties of graphene materials. Charges in biomolecules are transduced into a change in the GFET current, which allows real-time monitoring of the biomolecule concentrations. Here we theoretically evaluate the performance of GFET based real-time biomolecule sensing, aiming to better understand the width-scaling limit in GFET based biosensors. In particular, we study the effect of the channel-width and the chirality on FET sensitivity by taking the percentage change of the FET current per unit charge density as the sensing signal. Firstly, GFETs made of graphene nanoribbons (GNR and graphene sheets (GS show comparable sensing signals to each other when gated at 1011 – 1012 cm-2 carrier densities. Sensing signals in GNRs are enhanced when gated near the sub-band thresholds, and increase their values in wider GNRs due to the change in device conductance and quantum capacitance. Secondly, the GNR chirality is found to fine tune the sensing signals. Armchair GNRs with smaller energy bandgaps appear to have an enhanced sensing signal close to 1011 cm-2 carrier densities. These results may help understand the scaling limit in GFET based biosensors along the width direction, and shed light on forming all-electrical bio-arrays.

Field emission for cantilever sensors

NARCIS (Netherlands)

Yang, C.K.; le Fèbre, A.J.; Pandraud, G.; van der Drift, E.; French, P.J.

2008-01-01

Field emission provides an alternative sensing solution in scaled electromechanical systems and devices, when typical displacement detection techniques fail in submicron and nanodimenions. Apart from its independency from device dimension, it has also a high response, integration and high

Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

Science.gov (United States)

Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

2010-03-01

An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

Cleaning graphene with a titanium sacrificial layer

International Nuclear Information System (INIS)

Joiner, C. A.; Roy, T.; Hesabi, Z. R.; Vogel, E. M.; Chakrabarti, B.

2014-01-01

Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.

Field electron emission from pencil-drawn cold cathodes

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiangtao; Yang, Bingjun; Liu, Xiahui; Yang, Juan; Yan, Xingbin, E-mail: xbyan@licp.cas.cn [Laboratory of Clean Energy Chemistry and Materials, State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2016-05-09

Field electron emitters with flat, curved, and linear profiles are fabricated on flexible copy papers by direct pencil-drawing method. This one-step method is free of many restricted conditions such as high-temperature, high vacuum, organic solvents, and multistep. The cold cathodes display good field emission performance and achieve high emission current density of 78 mA/cm{sup 2} at an electric field of 3.73 V/μm. The approach proposed here would bring a rapid, low-cost, and eco-friendly route to fabricate but not limited to flexible field emitter devices.

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

Science.gov (United States)

Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

2015-09-21

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

Science.gov (United States)

Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

2010-10-25

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

Resonant tunnelling from nanometre-scale silicon field emission cathodes

International Nuclear Information System (INIS)

Johnson, S.; Markwitz, A.

2005-01-01

In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

International Nuclear Information System (INIS)

Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

2015-01-01

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Controlled synthesis of graphene nanoribbons for field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jun; Huang, Lihai [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018 (China); Zhang, Yupeng, E-mail: ypzhang018@gmail.com [Department of Materials Engineering, Monash University, Victoria, 3800 (Australia); Xue, Yunzhou, E-mail: yunzhou.xue@monash.edu [Department of Materials Engineering, Monash University, Victoria, 3800 (Australia); Zhang, Erpan [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018 (China); Wang, Hongbo [College of Automation, Hangzhou Dianzi University, Hangzhou, 310018 (China); Kong, Zhe; Xi, Junhua; Ji, Zhenguo [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018 (China)

2015-11-15

In this work, a template CVD method to produce graphene nanoribbons (GNRs) was developed with Cu nanoribbons as catalyst. Appropriate temperature, growth time and cooling rate were investigated and displayed the great importance for obtaining GNRs. The morphology, thickness and crystalline quality of the GNRs were characterized by the SEM, AFM, TEM (HRTEM and TEM diffraction), and Raman spectroscopy respectively, which indicated the GNRs had much narrower width, less layer numbers, smooth edges and higher crystalline compared to previous ones. Moreover, the electrical properties of the GNRs were measured and the mobilities reach 80–300 cm{sup 2} V{sup −1} s{sup −1}. This research provides a new type of GNRs experimentally, which is of great importance for the graphene applications. - Graphical abstract: Graphene nanoribbons obtained via CVD method show high quality, small width and smooth edges and were used to fabricated FETs with extracted mobilities of 80–300 cm{sup 2} V{sup −1} s{sup −1}. Highlights: • Graphene nanoribbons (GNRs) were obtained via a template CVD method. • The GNRs have narrower width, less layer numbers and smooth edges. • The mobilities of the GNRs reach 80–300 cm{sup 2} V{sup −1} s{sup −1}.

Graphene-based photovoltaic cells for near-field thermal energy conversion.

Science.gov (United States)

Messina, Riccardo; Ben-Abdallah, Philippe

2013-01-01

Thermophotovoltaic devices are energy-conversion systems generating an electric current from the thermal photons radiated by a hot body. While their efficiency is limited in far field by the Schockley-Queisser limit, in near field the heat flux transferred to a photovoltaic cell can be largely enhanced because of the contribution of evanescent photons, in particular for a source supporting a surface mode. Unfortunately, in the infrared where these systems operate, the mismatch between the surface-mode frequency and the semiconductor gap reduces drastically the potential of this technology. In this paper we propose a modified thermophotovoltaic device in which the cell is covered by a graphene sheet. By discussing the transmission coefficient and the spectral properties of the flux, we show that both the cell efficiency and the produced current can be enhanced, paving the way to promising developments for the production of electricity from waste heat.

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Recent progress in nanostructured next-generation field emission devices

International Nuclear Information System (INIS)

Mittal, Gaurav; Lahiri, Indranil

2014-01-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40–50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices. (topical review)

Recent progress in nanostructured next-generation field emission devices

Science.gov (United States)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Effect of annealing on field emission properties of nanodiamond coating

International Nuclear Information System (INIS)

Zhai, C.X.; Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y.