Nanophotonic quantum computer based on atomic quantum transistor

Energy Technology Data Exchange (ETDEWEB)

Andrianov, S N [Institute of Advanced Research, Academy of Sciences of the Republic of Tatarstan, Kazan (Russian Federation); Moiseev, S A [Kazan E. K. Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan (Russian Federation)

2015-10-31

We propose a scheme of a quantum computer based on nanophotonic elements: two buses in the form of nanowaveguide resonators, two nanosized units of multiatom multiqubit quantum memory and a set of nanoprocessors in the form of photonic quantum transistors, each containing a pair of nanowaveguide ring resonators coupled via a quantum dot. The operation modes of nanoprocessor photonic quantum transistors are theoretically studied and the execution of main logical operations by means of them is demonstrated. We also discuss the prospects of the proposed nanophotonic quantum computer for operating in high-speed optical fibre networks. (quantum computations)

Silicon Nanophotonics for Many-Core On-Chip Networks

Science.gov (United States)

Mohamed, Moustafa

Number of cores in many-core architectures are scaling to unprecedented levels requiring ever increasing communication capacity. Traditionally, architects follow the path of higher throughput at the expense of latency. This trend has evolved into being problematic for performance in many-core architectures. Moreover, the trends of power consumption is increasing with system scaling mandating nontraditional solutions. Nanophotonics can address these problems, offering benefits in the three frontiers of many-core processor design: Latency, bandwidth, and power. Nanophotonics leverage circuit-switching flow control allowing low latency; in addition, the power consumption of optical links is significantly lower compared to their electrical counterparts at intermediate and long links. Finally, through wave division multiplexing, we can keep the high bandwidth trends without sacrificing the throughput. This thesis focuses on realizing nanophotonics for communication in many-core architectures at different design levels considering reliability challenges that our fabrication and measurements reveal. First, we study how to design on-chip networks for low latency, low power, and high bandwidth by exploiting the full potential of nanophotonics. The design process considers device level limitations and capabilities on one hand, and system level demands in terms of power and performance on the other hand. The design involves the choice of devices, designing the optical link, the topology, the arbitration technique, and the routing mechanism. Next, we address the problem of reliability in on-chip networks. Reliability not only degrades performance but can block communication. Hence, we propose a reliability-aware design flow and present a reliability management technique based on this flow to address reliability in the system. In the proposed flow reliability is modeled and analyzed for at the device, architecture, and system level. Our reliability management technique is

Surface Plasmon Nanophotonics

CERN Document Server

Brongersma, Mark L

2007-01-01

The development of advanced dielectric photonic structures has enabled tremendous control over the propagation and manipulation of light. Structures such as waveguides, splitters, mixers, and resonators now play a central role in the telecommunications industry. This book will discuss an exciting new class of photonic devices, known as surface plasmon nanophotonic structures. Surface plasmons are easily accessible excitations in metals and semiconductors and involve a collective motion of the conduction electrons. These excitations can be exploited to manipulate electromagnetic waves at optical frequencies ("light") in new ways that are unthinkable in conventional dielectric structures. The field of plasmon nanophotonics is rapidly developing and impacting a wide range of areas including: electronics, photonics, chemistry, biology, and medicine. The book will highlight several exciting new discoveries that have been made, while providing a clear discussion of the underlying physics, the nanofabrication issues...

Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking

Science.gov (United States)

Shen, Bing; Polson, Randy; Menon, Rajesh

2016-11-01

Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ~λ0/2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking.

Science.gov (United States)

Shen, Bing; Polson, Randy; Menon, Rajesh

2016-11-09

Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ∼λ 0 /2 and designed waveguides with centre-to-centre spacing as small as 600 nm (-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Energy Technology Data Exchange (ETDEWEB)

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven, E-mail: srodt@physik.tu-berlin.de; Reitzenstein, Stephan [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Strittmatter, André [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg (Germany)

2015-07-15

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

Colloidal nanophotonics: the emerging technology platform.

Science.gov (United States)

Gaponenko, Sergey; Demir, Hilmi Volkan; Seassal, Christian; Woggon, Ulrike

2016-01-25

Dating back to decades or even centuries ago, colloidal nanophotonics during the last ten years rapidly extends towards light emitting devices, lasers, sensors and photonic circuitry to manifest itself as an emerging technology platform rather than an entirely academic research field.

Handbook of nano-optics and nanophotonics

CERN Document Server

2013-01-01

In the 1990s, optical technology and photonics industry developed fast, but further progress became difficult due to a fundamental limit of light known as the diffraction limit. This limit could be overcome using the novel technology of nano-optics or nanophotonics in which the size of the electromagnetic field is decreased down to the nanoscale and is used as a carrier for signal transmission, processing, and fabrication. Such a decrease beyond the diffraction limit is possible by using optical near-fields. The true nature of nano-optics and nanophotonics involves not only their abilities to meet the above requirements but also their abilities to realize qualitative innovations in photonic devices, fabrication techniques, energy conversion and information processing systems. The objective of this work is to review the innovations of optical science and technology by nano-optics and nanophotonics. While in conventional optical science and technology, light and matter are discussed separately, in nano-optics a...

Diamond electro-optomechanical resonators integrated in nanophotonic circuits

Energy Technology Data Exchange (ETDEWEB)

Rath, P.; Ummethala, S.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Diewald, S. [Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Lewes-Malandrakis, G.; Brink, D.; Heidrich, N.; Nebel, C. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany)

2014-12-22

Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here, we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.

Nanophotonic label-free biosensors for environmental monitoring.

Science.gov (United States)

Chocarro-Ruiz, Blanca; Fernández-Gavela, Adrián; Herranz, Sonia; Lechuga, Laura M

2017-06-01

The field of environmental monitoring has experienced a substantial progress in the last years but still the on-site control of contaminants is an elusive problem. In addition, the growing number of pollutant sources is accompanied by an increasing need of having efficient early warning systems. Several years ago biosensor devices emerged as promising environmental monitoring tools, but their level of miniaturization and their fully operation outside the laboratory prevented their use on-site. In the last period, nanophotonic biosensors based on evanescent sensing have emerged as an outstanding choice for portable point-of-care diagnosis thanks to their capability, among others, of miniaturization, multiplexing, label-free detection and integration in lab-on-chip platforms. This review covers the most relevant nanophotonic biosensors which have been proposed (including interferometric waveguides, grating-couplers, microcavity resonators, photonic crystals and localized surface plasmon resonance sensors) and their recent application for environmental surveillance. Copyright © 2017 Elsevier Ltd. All rights reserved.

Graphene nanophotonics: From fundamentals to applications

DEFF Research Database (Denmark)

Xiao, Sanshui

With unique possibilities for controlling light in nanoscale devices, graphene has opened new perspectives to the nanophotonics community with potential applications in metamaterials, modulators, photodetectors, and sensors. Following a brief introduction of graphene, I will address some...... fundamentals, such as excitation of graphene plasmon polartions [1], pushing graphene plasmons to low wavelengths, and investigating of graphene plasmon-phonon interactions [2] and light-matter interactions in graphene-metal hybrid structures [3]. Then I will discuss graphene-based optical modulators......, particularly focusing on graphene-silicon platforms for electro-absorption modulating...

Quantifying losses and thermodynamic limits in nanophotonic solar cells

Science.gov (United States)

Mann, Sander A.; Oener, Sebastian Z.; Cavalli, Alessandro; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.; Garnett, Erik C.

2016-12-01

Nanophotonic engineering shows great potential for photovoltaics: the record conversion efficiencies of nanowire solar cells are increasing rapidly and the record open-circuit voltages are becoming comparable to the records for planar equivalents. Furthermore, it has been suggested that certain nanophotonic effects can reduce costs and increase efficiencies with respect to planar solar cells. These effects are particularly pronounced in single-nanowire devices, where two out of the three dimensions are subwavelength. Single-nanowire devices thus provide an ideal platform to study how nanophotonics affects photovoltaics. However, for these devices the standard definition of power conversion efficiency no longer applies, because the nanowire can absorb light from an area much larger than its own size. Additionally, the thermodynamic limit on the photovoltage is unknown a priori and may be very different from that of a planar solar cell. This complicates the characterization and optimization of these devices. Here, we analyse an InP single-nanowire solar cell using intrinsic metrics to place its performance on an absolute thermodynamic scale and pinpoint performance loss mechanisms. To determine these metrics we have developed an integrating sphere microscopy set-up that enables simultaneous and spatially resolved quantitative absorption, internal quantum efficiency (IQE) and photoluminescence quantum yield (PLQY) measurements. For our record single-nanowire solar cell, we measure a photocurrent collection efficiency of >90% and an open-circuit voltage of 850 mV, which is 73% of the thermodynamic limit (1.16 V).

Diamond nanophotonics

Directory of Open Access Journals (Sweden)

Katja Beha

2012-12-01

Full Text Available We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen–vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon–vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition.

Selective epitaxy of semiconductor nanopyramids for nanophotonics

Energy Technology Data Exchange (ETDEWEB)

Poole, P J; Dalacu, D; Lefebvre, J; Williams, R L, E-mail: philip.poole@nrc-cnrc.gc.ca [Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6 (Canada)

2010-07-23

We present a detailed study of the parameters which affect the geometrical perfection of nanopyramids used for the site-selected nucleation of quantum dots. Through an understanding of crystal facet formation, we demonstrate that undesirable high index planes can be suppressed using carefully optimized lithography together with properly orientated source fluxes in the growth reactor. High quality InP nanopyramids are reported with individual InAs/InP quantum dots positioned with high precision. This represents an important milestone for the fabrication of complex quantum dot based nanophotonic devices.

Topology optimization of nano-photonic systems

DEFF Research Database (Denmark)

Elesin, Yuriy; Wang, Fengwen; Andkjær, Jacob Anders

2012-01-01

We describe recent developments within nano-photonic systems design based on topology optimization. Applications include linear and non-linear optical waveguides, slow-light waveguides, as well as all-dielectric cloaks that minimize scattering or back-scattering from hard obstacles.......We describe recent developments within nano-photonic systems design based on topology optimization. Applications include linear and non-linear optical waveguides, slow-light waveguides, as well as all-dielectric cloaks that minimize scattering or back-scattering from hard obstacles....

Tunable conductivity in mesoporous germanium

Science.gov (United States)

Beattie, Meghan N.; Bioud, Youcef A.; Hobson, David G.; Boucherif, Abderraouf; Valdivia, Christopher E.; Drouin, Dominique; Arès, Richard; Hinzer, Karin

2018-05-01

Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10‑3) Ω‑1 cm‑1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10‑3 Ω‑1 cm‑1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

Free-standing nanomechanical and nanophotonic structures in single-crystal diamond

Science.gov (United States)

Burek, Michael John

Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast

Digital resonant laser printing: Bridging nanophotonic science and consumer products

DEFF Research Database (Denmark)

Zhu, Xiaolong; Keshavarz Hedayati, Mehdi; Raza, Søren

2018-01-01

Nanophotonics research relies heavily on state-of-the-art and costly nano and microfabrication tech-nologies. While such technologies are fairly mature, their implementation in large-scale manufacturingof photonic devices is not straightforward. This is a major roadblock for integrating...

Computational nanophotonics modeling and applications

CERN Document Server

Musa, Sarhan M

2013-01-01

This reference offers tools for engineers, scientists, biologists, and others working with the computational techniques of nanophotonics. It introduces the key concepts of computational methods in a manner that is easily digestible for newcomers to the field. The book also examines future applications of nanophotonics in the technical industry and covers new developments and interdisciplinary research in engineering, science, and medicine. It provides an overview of the key computational nanophotonics and describes the technologies with an emphasis on how they work and their key benefits.

Engineering metallic nanostructures for plasmonics and nanophotonics

Science.gov (United States)

Lindquist, Nathan C.; Nagpal, Prashant; McPeak, Kevin M.; Norris, David J.; Oh, Sang-Hyun

2012-03-01

Metallic nanostructures now play an important role in many applications. In particular, for the emerging fields of plasmonics and nanophotonics, the ability to engineer metals on nanometric scales allows the development of new devices and the study of exciting physics. This review focuses on top-down nanofabrication techniques for engineering metallic nanostructures, along with computational and experimental characterization techniques. A variety of current and emerging applications are also covered.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

Science.gov (United States)

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Silicon nanophotonics for scalable quantum coherent feedback networks

International Nuclear Information System (INIS)

Sarovar, Mohan; Brif, Constantin; Soh, Daniel B.S.; Cox, Jonathan; DeRose, Christopher T.; Camacho, Ryan; Davids, Paul

2016-01-01

The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism. (orig.)

Silicon nanophotonics for scalable quantum coherent feedback networks

Energy Technology Data Exchange (ETDEWEB)

Sarovar, Mohan; Brif, Constantin [Sandia National Laboratories, Livermore, CA (United States); Soh, Daniel B.S. [Sandia National Laboratories, Livermore, CA (United States); Stanford University, Edward L. Ginzton Laboratory, Stanford, CA (United States); Cox, Jonathan; DeRose, Christopher T.; Camacho, Ryan; Davids, Paul [Sandia National Laboratories, Albuquerque, NM (United States)

2016-12-15

The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism. (orig.)

Nanophotonic quantum interface for nitrogen vacancy centers in diamond

International Nuclear Information System (INIS)

Yiwen Chu

2014-01-01

Nitrogen vacancy (NV) centers in diamond have emerged as a promising solid-state platform for quantum communication, quantum information processing and nanoscale sensing with optical read-out. Engineering light-matter interactions is crucial for the practical realization of these systems. I will present our work toward realizing individual NV centers embedded in nanofabricated hybrid photonic crystal cavities consisting of single crystal diamond and PMMA based Bragg structures. Devices with quality factors up to 3,000 coupled to NV centers have been implemented, leading to substantial Purcell enhancement of zero-phonon line. We investigate the optical coherence properties of NV centers inside these nanoscale structures and report on first cavity QED experiments with such systems. Applications of diamond nanophotonic devices for quantum networks and nonlinear optics with single photons will be discussed. (author)

Assessing the potential roles of silicon and germanium phthalocyanines in planar heterojunction organic photovoltaic devices and how pentafluoro phenoxylation can enhance π-π interactions and device performance.

Science.gov (United States)

Lessard, Benoît H; White, Robin T; Al-Amar, Mohammad; Plint, Trevor; Castrucci, Jeffrey S; Josey, David S; Lu, Zheng-Hong; Bender, Timothy P

2015-03-11

In this study, we have assessed the potential application of dichloro silicon phthalocyanine (Cl2-SiPc) and dichloro germanium phthalocyanine (Cl2-GePc) in modern planar heterojunction organic photovoltaic (PHJ OPV) devices. We have determined that Cl2-SiPc can act as an electron donating material when paired with C60 and that Cl2-SiPc or Cl2-GePc can also act as an electron acceptor material when paired with pentacene. These two materials enabled the harvesting of triplet energy resulting from the singlet fission process in pentacene. However, contributions to the generation of photocurrent were observed for Cl2-SiPc with no evidence of photocurrent contribution from Cl2-GePc. The result of our initial assessment established the potential for the application of SiPc and GePc in PHJ OPV devices. Thereafter, bis(pentafluoro phenoxy) silicon phthalocyanine (F10-SiPc) and bis(pentafluoro phenoxy) germanium phthalocyanine (F10-GePc) were synthesized and characterized. During thermal processing, it was discovered that F10-SiPc and F10-GePc underwent a reaction forming small amounts of difluoro SiPc (F2-SiPc) and difluoro GePc (F2-GePc). This undesirable reaction could be circumvented for F10-SiPc but not for F10-GePc. Using single crystal X-ray diffraction, it was determined that F10-SiPc has significantly enhanced π-π interactions compared with that of Cl2-SiPc, which had little to none. Unoptimized PHJ OPV devices based on F10-SiPc were fabricated and directly compared to those constructed from Cl2-SiPc, and in all cases, PHJ OPV devices based on F10-SiPc had significantly improved device characteristics compared to Cl2-SiPc.

Nanophotonics: The link between nanotechnology and photonics

CSIR Research Space (South Africa)

Sinha Ray, S

2012-10-01

Full Text Available and importance ? CSIR 2012 www.csir.co.za/nano Slide 2 ? Birth and definition of nanotechnology ? Benefits of nanotechnology ? The link between nanotechnology and photonics: Nanophotonics ? Importance and future of nanophotonics... ? Conclusions ? Our on-going research on nanophotonics ? CSIR 2006 www.csir.co.zaSlide 3 MISSION: The DST/CSIR NATIONAL CENTRE FOR NANOSTRUCTURED MATERIALS coordinates, facilitates, disseminates new knowledge, and expedites...

Nanophotonic rare-earth quantum memory with optically controlled retrieval

Science.gov (United States)

Zhong, Tian; Kindem, Jonathan M.; Bartholomew, John G.; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D.; Beyer, Andrew D.; Faraon, Andrei

2017-09-01

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes.

Germanium nanoparticles grown at different deposition times for memory device applications

International Nuclear Information System (INIS)

Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

2016-01-01

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Germanium nanoparticles grown at different deposition times for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

2016-07-29

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

Science.gov (United States)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

Germanium and indium

Science.gov (United States)

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

Integrating nanophotonic concepts and topics into optics curricula

Science.gov (United States)

Sonek, Gregory J.

2007-06-01

Nanophotonics has emerged as a new and important field of study, not only in research, but also in undergraduate optics and photonics education and training. Beyond the study of classical and quantum optics, it is important for students to learn about how the flow of light can be manipulated on a nanoscale level, and used in applications such as telecommunications, imaging, and medicine. This paper reports on our work to integrate basic nanophotonic concepts and topics into existing optics and optical electronics courses, as well as independent study projects, at the undergraduate level. Through classroom lectures, topical readings, computer modeling exercises, and laboratory experiments, students are introduced to nanophotonic concepts subsequent to a study of physical and geometrical optics. A compare and contrast methodology is employed to help students identify similarities and differences that exist in the optical behavior of bulk and nanostructured media. Training is further developed through engineering design and simulation exercises that use advanced, vector-diffraction-based, modeling software for simulating the performance of various materials and structures. To date, the addition of a nanophotonics component to the optics curriculum has proven successful, been enthusiastically received by students, and should serve as a basis for further course development efforts that emphasize the combined capabilities of nanotechnology and photonics.

Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

CERN Document Server

Usami, N

2011-01-01

Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

Emerging Nanophotonic Applications Explored with Advanced Scientific Parallel Computing

Science.gov (United States)

Meng, Xiang

The domain of nanoscale optical science and technology is a combination of the classical world of electromagnetics and the quantum mechanical regime of atoms and molecules. Recent advancements in fabrication technology allows the optical structures to be scaled down to nanoscale size or even to the atomic level, which are far smaller than the wavelength they are designed for. These nanostructures can have unique, controllable, and tunable optical properties and their interactions with quantum materials can have important near-field and far-field optical response. Undoubtedly, these optical properties can have many important applications, ranging from the efficient and tunable light sources, detectors, filters, modulators, high-speed all-optical switches; to the next-generation classical and quantum computation, and biophotonic medical sensors. This emerging research of nanoscience, known as nanophotonics, is a highly interdisciplinary field requiring expertise in materials science, physics, electrical engineering, and scientific computing, modeling and simulation. It has also become an important research field for investigating the science and engineering of light-matter interactions that take place on wavelength and subwavelength scales where the nature of the nanostructured matter controls the interactions. In addition, the fast advancements in the computing capabilities, such as parallel computing, also become as a critical element for investigating advanced nanophotonic devices. This role has taken on even greater urgency with the scale-down of device dimensions, and the design for these devices require extensive memory and extremely long core hours. Thus distributed computing platforms associated with parallel computing are required for faster designs processes. Scientific parallel computing constructs mathematical models and quantitative analysis techniques, and uses the computing machines to analyze and solve otherwise intractable scientific challenges. In

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Impact of Atomic Layer Deposition to NanoPhotonic Structures and Devices: A Review

Directory of Open Access Journals (Sweden)

Muhammad Rizwan eSaleem

2014-10-01

Full Text Available We review the significance of optical thin films by Atomic Layer Deposition (ALD method to fabricate nanophotonic devices and structures. ALD is a versatile technique to deposit functional coatings on reactive surfaces with conformal growth of compound materials, precise thickness control capable of angstrom resolution and coverage of high aspect ratio nanostructures using wide range of materials. ALD has explored great potential in the emerging fields of photonics, plasmonics, nano-biotechnology, and microelectronics. ALD technique uses sequential reactive chemical reactions to saturate a surface with a monolayer by pulsing of a first precursor (metal alkoxides or covalent halides, followed by reaction with second precursor molecules such as water to form the desired compound coatings. The targeted thickness of the desired compound material is controlled by the number of ALD cycles of precursor molecules that ensures the self limiting nature of reactions. The conformal growth and filling of TiO2 and Al2O3 optical material on nanostructures and their resulting optical properties have been described. The low temperature ALD-growth on various replicated sub-wavelength polymeric gratings is discussed.

High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

Science.gov (United States)

Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

2017-11-01

The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

Technology CAD for germanium CMOS circuit

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

2006-12-15

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

Technology CAD for germanium CMOS circuit

International Nuclear Information System (INIS)

Saha, A.R.; Maiti, C.K.

2006-01-01

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

VLSI micro- and nanophotonics science, technology, and applications

CERN Document Server

Lee, El-Hang; Razeghi, Manijeh; Jagadish, Chennupati

2011-01-01

Addressing the growing demand for larger capacity in information technology, VLSI Micro- and Nanophotonics: Science, Technology, and Applications explores issues of science and technology of micro/nano-scale photonics and integration for broad-scale and chip-scale Very Large Scale Integration photonics. This book is a game-changer in the sense that it is quite possibly the first to focus on ""VLSI Photonics"". Very little effort has been made to develop integration technologies for micro/nanoscale photonic devices and applications, so this reference is an important and necessary early-stage pe

Built-in surface electric field, piezoelectricity and photoelastic effect in GaN nanorods for nanophotonic devices.

Science.gov (United States)

Su, W S; Chen, T T; Cheng, C L; Fu, S P; Chen, Y F; Hsiao, C L; Tu, L W

2008-06-11

Novel behaviors arising from the coupling between the built-in surface electric field, piezoelectricity, electron-hole pairs and external light beam were observed in GaN nanorods. An increase in the optical excitation density resulted in a blueshift in the photoluminescence spectra and a redshift in the frequency of the GaN A(1)(LO) phonon. The underlying mechanism was attributed to the screening of the built-in surface electric field by photoexcited carriers and, through the converse piezoelectric effect, a reduction in the internal strain. The existence of the built-in surface electric field in GaN nanorods was confirmed by scanning Kelvin probe microscopy. Our results firmly establish the existence of the photoelastic effect in GaN nanorods. In addition to underpinning the principle for applications in nanophotonic devices, this discovery also draws attention to the novel effects arising from the inherent large surface-to-volume ratio of nanostructures, which is possibly applicable to many other nanomaterials.

Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

2009-07-01

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Gold catalytic Growth of Germanium Nanowires by chemical vapour deposition method

Directory of Open Access Journals (Sweden)

M. Zahedifar

2013-03-01

Full Text Available Germanium nanowires (GeNWs were synthesized using chemical vapor deposition (CVD based on vapor–liquid–solid (VLS mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4 as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal solution, which resulted in Au nanoparticles with different sizes. GeNWs were synthesized at 400 °C, which is a low temperature for electrical device fabrication. Effect of different parameters such as Au nanoparticles size, carrier gas (Ar flow and mixture of H2 with the carrier gas on GeNWs diameter and shape was studied by SEM images. The chemical composition of the nanostructure was also examined by energy dispersive X-ray spectroscopy (EDS.

Zero-mode waveguide nanophotonic structures for single molecule characterization

Science.gov (United States)

Crouch, Garrison M.; Han, Donghoon; Bohn, Paul W.

2018-05-01

Single-molecule characterization has become a crucial research tool in the chemical and life sciences, but limitations, such as limited concentration range, inability to control molecular distributions in space, and intrinsic phenomena, such as photobleaching, present significant challenges. Recent developments in non-classical optics and nanophotonics offer promising routes to mitigating these restrictions, such that even low affinity (K D ~ mM) biomolecular interactions can be studied. Here we introduce and review specific nanophotonic devices used to support single molecule studies. Optical nanostructures, such as zero-mode waveguides (ZMWs), are usually fabricated in thin gold or aluminum films and serve to confine the observation volume of optical microspectroscopy to attoliter to zeptoliter volumes. These simple nanostructures allow individual molecules to be isolated for optical and electrochemical analysis, even when the molecules of interest are present at high concentration (µM–mM) in bulk solution. Arrays of ZMWs may be combined with optical probes such as single molecule fluorescence, single molecule fluorescence resonance energy transfer, and fluorescence correlation spectroscopy for distributed analysis of large numbers of single-molecule reactions or binding events in parallel. Furthermore, ZMWs may be used as multifunctional devices, for example by combining optical and electrochemical functions in a single discrete architecture to achieve electrochemical ZMWs. In this review, we will describe the optical properties, fabrication, and applications of ZMWs for single-molecule studies, as well as the integration of ZMWs into systems for chemical and biochemical analysis.

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

KAUST Repository

Hussain, Aftab M.

2013-08-16

We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oriented bottom-up growth of armchair graphene nanoribbons on germanium

Science.gov (United States)

Arnold, Michael Scott; Jacobberger, Robert Michael

2016-03-15

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

Frontiers in Surface Nanophotonics Principles and Applications

CERN Document Server

Andrews, David L

2007-01-01

With the rapid technical advancement of nanoscale fabrication, the science of optics has recently undergone a renaissance with the characterization of new and distinctive kinds of photonic interaction. Beyond the well-known plasmonic processes, many of these effects also arise from intricate local field effects associated with surfaces, where the surface morphology determines the detailed electromagnetic behavior. As such interactions move into practical device applications across the globe, this book presents an overview of some cutting edge developments, contributed by members of several highly renowned research groups. Copiously illustrated and with extensive references to original literature, Frontiers in Surface Nanophotonics will appeal to a wide readership with interests in optics, materials science and nanotechnology.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

KAUST Repository

Almuslem, A. S.

2017-02-14

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Disorder improves nanophotonic light trapping in thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5—Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut für Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

2014-03-31

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500 nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500 nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

Science.gov (United States)

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

Science.gov (United States)

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Method of beryllium implantation in germanium substrate

International Nuclear Information System (INIS)

Kagawa, S.; Baba, Y.; Kaneda, T.; Shirai, T.

1983-01-01

A semiconductor device is disclosed, as well as a method for manufacturing it in which ions of beryllium are implanted into a germanium substrate to form a layer containing p-type impurity material. There after the substrate is heated at a temperature in the range of 400 0 C. to 700 0 C. to diffuse the beryllium ions into the substrate so that the concentration of beryllium at the surface of the impurity layer is in the order of 10 17 cm- 3 or more. In one embodiment, a p-type channel stopper is formed locally in a p-type germanium substrate and an n-type active layer is formed in a region surrounded by, and isolated from, the channel stopper region. In another embodiment, a relatively shallow p-type active layer is formed at one part of an n-type germanium substrate and p-type guard ring regions are formed surrounding, and partly overlapping said p-type active layer. In a further embodiment, a p-type island region is formed at one part of an n-type germanium substrate, and an n-type region is formed within said p-type region. In these embodiments, the p-type channel stopper region, p-type guard ring regions and the p-type island region are all formed by implanting ions of beryllium into the germanium substrate

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.

2014-08-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Fabrication activity for nanophotonics

DEFF Research Database (Denmark)

Malureanu, Radu; Chung, Il-Sug; Carletti, Luca

We present the fabrication and characterization of new structures and materials to be used in nanophotonics. The first structure presented is a fractal metallic metasurface designed to be used as a high-sensitivity sensor for 810nm wavelength. A second structure is a high index contrast grating...

Fundamental limit of nanophotonic light trapping in solar cells.

Science.gov (United States)

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui

2010-10-12

Establishing the fundamental limit of nanophotonic light-trapping schemes is of paramount importance and is becoming increasingly urgent for current solar cell research. The standard theory of light trapping demonstrated that absorption enhancement in a medium cannot exceed a factor of 4n(2)/sin(2)θ, where n is the refractive index of the active layer, and θ is the angle of the emission cone in the medium surrounding the cell. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the conventional limit can be substantially surpassed when optical modes exhibit deep-subwavelength-scale field confinement, opening new avenues for highly efficient next-generation solar cells.

Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

Energy Technology Data Exchange (ETDEWEB)

Dominici, Stefano [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, Boston, Massachusetts 02215 (United States); Wen, Hanqing; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, Boston, Massachusetts 02215 (United States); Bertazzi, Francesco; Goano, Michele [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy)

2016-05-23

The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 10{sup 16} cm{sup −3} to 5 × 10{sup 19} cm{sup −3}. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

Directory of Open Access Journals (Sweden)

Lin Yu

2011-01-01

Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

International Nuclear Information System (INIS)

Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

2014-01-01

We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

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Patrik Rath

2013-05-01

Full Text Available Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

Trapped atoms along nanophotonic resonators

Science.gov (United States)

Fields, Brian; Kim, May; Chang, Tzu-Han; Hung, Chen-Lung

2017-04-01

Many-body systems subject to long-range interactions have remained a very challenging topic experimentally. Ultracold atoms trapped in extreme proximity to the surface of nanophotonic structures provides a dynamic system combining the strong atom-atom interactions mediated by guided mode photons with the exquisite control implemented with trapped atom systems. The hybrid system promises pair-wise tunability of long-range interactions between atomic pseudo spins, allowing studies of quantum magnetism extending far beyond nearest neighbor interactions. In this talk, we will discuss our current status developing high quality nanophotonic ring resonators, engineered on CMOS compatible optical chips with integrated nanostructures that, in combination with a side illuminating beam, can realize stable atom traps approximately 100nm above the surface. We will report on our progress towards loading arrays of cold atoms near the surface of these structures and studying atom-atom interaction mediated by photons with high cooperativity.

Nanophotonic Design for Broadband Light Management

Energy Technology Data Exchange (ETDEWEB)

Kosten, Emily; Callahan, Dennis; Horowitz, Kelsey; Pala, Ragip; Atwater, Harry

2014-10-13

We describe nanophotonic design approaches for broadband light management including i) crossed-trapezoidal Si structures ii) Si photonic crystal superlattices, and iii) tapered and inhomogeneous diameter III-V/Si nanowire arrays.

Silicon, germanium, and III-V-based tunneling devices for low-power applications

Science.gov (United States)

Smith, Joshua T.

While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

Germanium field-effect transistor made from a high-purity substrate

International Nuclear Information System (INIS)

Hansen, W.L.; Goulding, F.S.; Haller, E.E.

1978-11-01

Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

Nanophotonics for Molecular Diagnostics and Therapy Applications

Directory of Open Access Journals (Sweden)

João Conde

2012-01-01

Full Text Available Light has always fascinated mankind and since the beginning of recorded history it has been both a subject of research and a tool for investigation of other phenomena. Today, with the advent of nanotechnology, the use of light has reached its own dimension where light-matter interactions take place at wavelength and subwavelength scales and where the physical/chemical nature of nanostructures controls the interactions. This is the field of nanophotonics which allows for the exploration and manipulation of light in and around nanostructures, single molecules, and molecular complexes. What is more is the use of nanophotonics in biomolecular interactions—nanobiophotonics—has prompt for a plethora of molecular diagnostics and therapeutics making use of the remarkable nanoscale properties. In this paper, we shall focus on the uses of nanobiophotonics for molecular diagnostics involving specific sequence characterization of nucleic acids and for gene delivery systems of relevance for therapy strategies. The use of nanobiophotonics for the combined diagnostics/therapeutics (theranostics will also be addressed, with particular focus on those systems enabling the development of safer, more efficient, and specific platforms. Finally, the translation of nanophotonics for theranostics into the clinical setting will be discussed.

Mesostructured metal germanium sulfides

Energy Technology Data Exchange (ETDEWEB)

MacLachlan, M.J.; Coombs, N.; Bedard, R.L.; White, S.; Thompson, L.K.; Ozin, G.A.

1999-12-29

A new class of mesostructured metal germanium sulfide materials has been prepared and characterized. The synthesis, via supramolecular assembly of well-defined germanium sulfide anionic cluster precursors and transition-metal cations in formamide, represents a new strategy for the formation of this class of solids. A variety of techniques were employed to examine the structure and composition of the materials. Structurally, the material is best described as a periodic mesostructured metal sulfide-based coordination framework akin to periodic hexagonal mesoporous silica, MCM-41. At the molecular scale, the materials strongly resemble microstructured metal germanium sulfides, in which the structure of the [Ge{sub 4}S{sub 10}]{sup 4{minus}} cluster building-blocks are intact and linked via {mu}-S-M-S bonds. Evidence for a metal-metal bond in mesostructured Cu/Ge{sub 4}S{sub 10} is also provided.

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

Science.gov (United States)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lingen; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

2016-07-15

Highlights: • An environmental friendly vacuum reduction metallurgical process is proposed. • Rare and valuable metal germanium from coal fly ash is recycled. • Residues are not a hazardous material and can be further recycled. • A germanium recovery ratio of 94.64% is obtained in pilot scale experiments. - Abstract: The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173 K and 10 Pa with 10 wt% coke addition for 40 min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473 K, 1–10 Pa and heating time 40 min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes.

Plasmonic and Dielectric Metasurfaces: Design, Fabrication and Applications

Directory of Open Access Journals (Sweden)

Jian Wang

2016-09-01

Full Text Available Two-dimensional metasurfaces are widely focused on for their ability for flexible light manipulation (phase, amplitude, polarization over sub-wavelength propagation distances. Most of the metasurfaces can be divided into two categories by the material type of unit structure, i.e., plasmonic metasurfaces and dielectric metasurfaces. For plasmonic metasurfaces, they are made on the basis of metallic meta-atoms whose optical responses are driven by the plasmon resonances supported by metallic particles. For dielectric metasurfaces, the unit structure is constructed with high refractive index dielectric resonators, such as silicon, germanium or tellurium, which can support electric and magnetic dipole responses based on Mie resonances. The responses of plasmonic and dielectric metasurfaces are all relevant to the characteristics of unit structure, such as dimensions and materials. One can manipulate the electromagnetic field of light wave scattered by the metasurfaces through designing the dimension parameters of each unit structure in the metasurfaces. In this review article, we give a brief overview of our recent progress in plasmonic and dielectric metasurface-assisted nanophotonic devices and their design, fabrication and applications, including the metasurface-based broadband and the selective generation of orbital angular momentum (OAM carrying vector beams, N-fold OAM multicasting using a V-shaped antenna array, a metasurface on conventional optical fiber facet for linearly-polarized mode (LP11 generation, graphene split-ring metasurface-assisted terahertz coherent perfect absorption, OAM beam generation using a nanophotonic dielectric metasurface array, as well as Bessel beam generation and OAM multicasting using a dielectric metasurface array. It is believed that metasurface-based nanophotonic devices are one of the devices with the most potential applied in various fields, such as beam steering, spatial light modulator, nanoscale

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

KAUST Repository

Chroneos, Alexander I.

2012-01-26

In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superconductivity of tribolayers formed on germanium by friction between germanium and lead

Energy Technology Data Exchange (ETDEWEB)

Dukhovskoi, A.; Karapetyan, S.S.; Morozov, Y.G.; Onishchenko, A.S.; Petinov, V.I.; Ponomarev, A.N.; Silin, A.A.; Stepanov, B.M.; Tal' roze, V.L.

1978-04-05

A superconducting state was observed for the first time in tribolayers of germanium produced by friction of germanium with lead at 42 K. The maximum value of T/sub c/ obtained in the experiment was 19 K, which is much higher than T/sub c/ of bulk lead itself or of lead films sputtered on germanium.

Development of neutron-transmutation-doped germanium bolometer material

International Nuclear Information System (INIS)

Palaio, N.P.

1983-08-01

The behavior of lattice defects generated as a result of the neutron-transmutation-doping of germanium was studied as a function of annealing conditions using deep level transient spectroscopy (DLTS) and mobility measurements. DLTS and variable temperature Hall effect were also used to measure the activation of dopant impurities formed during the transmutation process. In additioon, a semi-automated method of attaching wires on to small chips of germanium ( 3 ) for the fabrication of infrared detecting bolometers was developed. Finally, several different types of junction field effect transistors were tested for noise at room and low temperature (approx. 80 K) in order to find the optimum device available for first stage electronics in the bolometer signal amplification circuit

Nanophotonic Optical Isolator Controlled by the Internal State of Cold Atoms

Directory of Open Access Journals (Sweden)

Clément Sayrin

2015-12-01

Full Text Available The realization of nanophotonic optical isolators with high optical isolation even at ultralow light levels and low optical losses is an open problem. Here, we employ the link between the local polarization of strongly confined light and its direction of propagation to realize low-loss nonreciprocal transmission through a silica nanofiber at the single-photon level. The direction of the resulting optical isolator is controlled by the spin state of cold atoms. We perform our experiment in two qualitatively different regimes, i.e., with an ensemble of cold atoms where each atom is weakly coupled to the waveguide and with a single atom strongly coupled to the waveguide mode. In both cases, we observe simultaneously high isolation and high forward transmission. The isolator concept constitutes a nanoscale quantum optical analog of microwave ferrite resonance isolators, can be implemented with all kinds of optical waveguides and emitters, and might enable novel integrated optical devices for fiber-based classical and quantum networks.

Influence of Parameters of a Printing Plate on Photoluminescence of Nanophotonic Printed Elements of Novel Packaging

Directory of Open Access Journals (Sweden)

Olha Sarapulova

2015-01-01

Full Text Available In order to produce nanophotonic elements for smart packaging, we investigated the influence of the parameters of screen and offset gravure printing plates on features of printed application of coatings with nanophotonic components and on parameters of their photoluminescence. To determine the dependence of luminescence intensity on the thickness of solid coating, we carried out the formation of nanophotonic solid surfaces by means of screen printing with different layer thickness on polypropylene film. The obtained analytical dependencies were used to confirm the explanation of the processes that occur during the fabrication of nanophotonic coverings with offset gravure printing plates. As a result of experimental studies, it was determined that the different character of the dependency of total luminescence intensity of nanophotonic elements from the percentage of a pad is explained by the use of different types of offset gravure printing plates, where the size of raster points remains constant in one case and changes in the other case, while the depth of the printing elements accordingly changes or remains constant. To obtain nanophotonic areas with predetermined photoluminescent properties, the influence of investigated factors on changes of photoluminescent properties of nanophotonic printed surfaces should be taken into consideration.

Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits.

Science.gov (United States)

Dai, Daoxin; Mao, Mao

2015-11-02

An inverse taper on silicon is proposed and designed to realize an efficient mode converter available for the connection between multimode silicon nanophotonic integrated circuits and few-mode fibers. The present mode converter has a silicon-on-insulator inverse taper buried in a 3 × 3μm(2) SiN strip waveguide to deal with not only for the fundamental mode but also for the higher-order modes. The designed inverse taper enables the conversion between the six modes (i.e., TE(11), TE(21), TE(31), TE(41), TM(11), TM(12)) in a 1.4 × 0.22μm(2) multimode SOI waveguide and the six modes (like the LP(01), LP(11a), LP(11b) modes in a few-mode fiber) in a 3 × 3μm(2) SiN strip waveguide. The conversion efficiency for any desired mode is higher than 95.6% while any undesired mode excitation ratio is lower than 0.5%. This is helpful to make multimode silicon nanophotonic integrated circuits (e.g., the on-chip mode (de)multiplexers developed well) available to work together with few-mode fibers in the future.

Special issue on graphene nanophotonics

Science.gov (United States)

Nikitin, A. Yu; Maier, S. A.; Martin-Moreno, L.

2013-11-01

Graphene nanophotonics has recently appeared as a new research area, which combines the topics of nanophotonics (devoted to studying the behavior of electromagnetic fields on the deep subwavelength scale) and the several extraordinary material properties of graphene. Apart from being the thinnest existing material, graphene is very attractive for photonics due to its extreme flexibility, high mobility and the possibility of controlling its carrier concentration (and hence its electromagnetic response) via external gate voltages. From its very birth, graphene nanophotonics has the potential for innovative technological applications, aiming to complement (or in some cases even replace) the existing semiconductor/metallic photonic platforms. It has already shown exceptional capabilities in many directions, such as for instance in photodetection, photovoltaics, lasing, etc [1]. A special place in graphene photonics belongs to graphene plasmonics, which studies both intrinsic plasmons in graphene and the combination of graphene with plasmons supported by metallic structures [2]. Here, apart from the dynamic control via external voltages previously mentioned, the use of graphene brings with it the remarkable property that graphene plasmons have a wavelength λp that can be even one hundred times smaller than that in free space λ (for instance λp ~ 100 nm at λ ~ 10 μm). This provides both extreme confinement and extreme enhancement of the electromagnetic field at the graphene sheet which, together with its high sensitivity to the doping level, opens many interesting perspectives for new optical devices. The collection of papers presented in this special issue highlights different aspects of nanophotonics in graphene and related systems. The timely appearance of this publication was apparent during the monographic workshop 'Graphene Nanophotonics', sponsored by the European Science Foundation and held during 3-8 March 2013, in Benasque (Spain). This special issue

Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

Science.gov (United States)

Haller, E. E.; Itoh, K. M.; Beeman, J. W.

1996-01-01

Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

Nanophotonic Modulator with Bismuth Ferrite as Low-loss Switchable Material

DEFF Research Database (Denmark)

Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

2015-01-01

We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved.......We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved....

Synthesis and evaluation of germanium organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

International Nuclear Information System (INIS)

Ballestero Martinez, Ernesto

2014-01-01

The interest in the development of materials having applications such as electronics areas or biomarkers has affected the synthesis of new compounds based on germanium. This element has had two common oxidation states, +4 and +2, of them, +2 oxidation state has been the least studied and more reactive. Additionally, compounds of germanium (II) have had similarities with carbenes regarding the chemical acid-base Lewis. The preparation of compounds of germanium (II) with ligands β-decimations has enabled stabilization of new chemical functionalities and, simultaneously, provided interesting thermal properties to develop new preparation methodologies of materials with novel properties. The preparation of amides germanium(II) L'Ge(NHPh) [1, L' = {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 }], L'Ge(4-NHPy) [2] L'Ge(2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC(CMeN-2,6- i Pr 2 C 6 H 3 ) 2 }]; the structural chemical composition were determined using techniques such as nuclear magnetic resonance ( 1 H, 13 C), other techniques are treated: elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermal gravimetric analysis (TGA). The TGA has showed that 4-1 have experimented a thermal decomposition; therefore, these compounds could be considered as potential starting materials for obtaining germanium nitride (GeN x ). Certainly, the availability of nitrogen coordinating atoms in the chemical composition in 2-4 have been interesting because it could act as ligands in reactions with transition metal complexes. That way, information could be obtained at the molecular level for some reactions and interactions that in surface chemistry have used similar link sites, for example, chemical functionalization of silicon and germanium substrates. The synthesis and structural characterization of germanium chloride compound(II) L''GeCl [5, L'' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 ], which could be used later for the

Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

International Nuclear Information System (INIS)

Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng

2011-01-01

Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 °C, and separated well at 600 °C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 °C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 °C annealing. The electrical characteristics of data retention in the sample with the 600 °C annealing exhibited better performance than the 500 °C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

The establishment of bed type germanium-based whole body counters

International Nuclear Information System (INIS)

Chen, M.C.; Sun, C.L.; Yeh, W.W.

1996-01-01

A coaxial germanium detector was installed in a shadow-shield counter for the in-vivo measurement of γ emitters in the body. It is divided into two subparts, automatic liquid nitrogen transfer system and the Ge-based counting system. The automatic liquid nitrogen transfer system and a complete gamma spectroscopy software package were manufactured by EG and G ORTEC company. Some experiments were finished to get the optimum three setting parameters for how to operate the auto liquid nitrogen transfer system in good conditions. The filling interval should be setting at eight hours, the filling time should be setting at ten minutes, and the pressure of dewar should operate in a range from 14 to 26 PSI. The RMC-II phantom that is designed by Canberra company is used as standard man for all kinds of calibrations. The detector has resolutions that are less than 2.5 keV with an average of 1.87 keV for the 60 Co 1.33-MeV γ-ray peak. The efficiency value of thyroid geometry for four different organs is highest in the phantom. The resolution of the Germanium detector for measuring radioactivity in the body that is better than the sodium iodide detector is used to measure the internal depositions of radionuclide mixtures. So, the advantage of the germanium counter can just compensate the disadvantage of the NaI(TI) detector. The qualitative and quantitative analysis for whole body counting can keep in the best conditions if both whole body counters are operated at the same time for routine measurement purpose in the laboratory

Roundtrip matrix method for calculating the leaky resonant modes of open nanophotonic structures

DEFF Research Database (Denmark)

de Lasson, Jakob Rosenkrantz; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We present a numerical method for calculating quasi-normal modes of open nanophotonic structures. The method is based on scattering matrices and a unity eigenvalue of the roundtrip matrix of an internal cavity, and we develop it in detail with electromagnetic fields expanded on Bloch modes...

Generalized superradiant assembly for nanophotonic thermal emitters

Science.gov (United States)

Mallawaarachchi, Sudaraka; Gunapala, Sarath D.; Stockman, Mark I.; Premaratne, Malin

2018-03-01

Superradiance explains the collective enhancement of emission, observed when nanophotonic emitters are arranged within subwavelength proximity and perfect symmetry. Thermal superradiant emitter assemblies with variable photon far-field coupling rates are known to be capable of outperforming their conventional, nonsuperradiant counterparts. However, due to the inability to account for assemblies comprising emitters with various materials and dimensional configurations, existing thermal superradiant models are inadequate and incongruent. In this paper, a generalized thermal superradiant assembly for nanophotonic emitters is developed from first principles. Spectral analysis shows that not only does the proposed model outperform existing models in power delivery, but also portrays unforeseen and startling characteristics during emission. These electromagnetically induced transparency like (EIT-like) and superscattering-like characteristics are reported here for a superradiant assembly, and the effects escalate as the emitters become increasingly disparate. The fact that the EIT-like characteristics are in close agreement with a recent experimental observation involving the superradiant decay of qubits strongly bolsters the validity of the proposed model.

Near-infrared emission from mesoporous crystalline germanium

Energy Technology Data Exchange (ETDEWEB)

Boucherif, Abderraouf; Aimez, Vincent; Arès, Richard, E-mail: richard.ares@usherbrooke.ca [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Korinek, Andreas [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada)

2014-10-15

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

Dispersion engineering for integrated nanophotonics

CERN Document Server

Vanbésien, Olivier

2014-01-01

This book shows how dispersion engineering in two dimensional dielectric photonic crystals can provide new effects for the precise control of light propagation for integrated nanophotonics.Dispersion engineering in regular and graded photonic crystals to promote anomalous refraction effects is studied from the concepts to experimental demonstration via nanofabrication considerations. Self collimation, ultra and negative refraction, second harmonic generation, mirage and invisibility effects which lead to an unprecedented control of light propagation at the (sub-)wavelength scale for the

A comparative study of in-flow and micro-patterning biofunctionalization protocols for nanophotonic silicon-based biosensors.

Science.gov (United States)

González-Guerrero, Ana Belén; Alvarez, Mar; García Castaño, Andrés; Domínguez, Carlos; Lechuga, Laura M

2013-03-01

Reliable immobilization of bioreceptors over any sensor surface is the most crucial step for achieving high performance, selective and sensitive biosensor devices able to analyze human samples without the need of previous processing. With this aim, we have implemented an optimized scheme to covalently biofunctionalize the sensor area of a novel nanophotonic interferometric biosensor. The proposed method is based on the ex-situ silanization of the silicon nitride transducer surface by the use of a carboxyl water soluble silane, the carboxyethylsilanetriol sodium salt (CTES). The use of an organosilane stable in water entails advantages in comparison with usual trialkoxysilanes such as avoiding the generation of organic waste and leading to the assembly of compact monolayers due to the high dielectric constant of water. Additionally, cross-linking is prevented when the conditions (e.g. immersion time, concentration of silane) are optimized. This covalent strategy is followed by the bioreceptor linkage on the sensor area surface using two different approaches: an in-flow patterning and a microcontact printing using a biodeposition system. The performance of the different bioreceptor layers assembled is compared by the real-time and label-free immunosensing of the proteins BSA/mAb BSA, employed as a model molecular pair. Although the results demonstrated that both strategies provide the biosensor with a stable biological interface, the performance of the bioreceptor layer assembled by microcontact printing slightly improves the biosensing capabilities of the photonic biosensor. Copyright © 2012 Elsevier Inc. All rights reserved.

Nanophotonic light-trapping theory for solar cells

Energy Technology Data Exchange (ETDEWEB)

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui [Stanford University, Ginzton Lab, Stanford, CA (United States)

2011-11-15

Conventional light-trapping theory, based on a ray-optics approach, was developed for standard thick photovoltaic cells. The classical theory established an upper limit for possible absorption enhancement in this context and provided a design strategy for reaching this limit. This theory has become the foundation for light management in bulk silicon PV cells, and has had enormous influence on the optical design of solar cells in general. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the standard limit can be substantially surpassed when optical modes in the active layer are confined to deep-subwavelength scale, opening new avenues for highly efficient next-generation solar cells. (orig.)

Lattice site and thermal stability of transition metals in germanium

CERN Document Server

Augustyns, Valérie; Pereira, Lino

Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Hollow spheres: crucial building blocks for novel nanostructures and nanophotonics

Directory of Open Access Journals (Sweden)

Zhong Kuo

2018-03-01

Full Text Available In this review, we summarize the latest developments in research specifically derived from the unique properties of hollow microspheres, in particular, hollow silica spheres with uniform shells. We focus on applications in nanosphere (colloidal lithography and nanophotonics. The lithography from a layer of hollow spheres can result in nanorings, from a multilayer in unique nano-architecture. In nanophotonics, disordered hollow spheres can result in antireflection coatings, while ordered colloidal crystals (CCs of hollow spheres exhibit unique refractive index enhancement upon infiltration, ideal for optical sensing. Furthermore, whispering gallery mode (WGM inside the shell of hollow spheres has also been demonstrated to enhance light absorption to improve the performance of solar cells. These applications differ from the classical applications of hollow spheres, based only on their low density and large surface area, such as catalysis and chemical sensing. We provide a brief overview of the synthesis and self-assembly approaches of the hollow spheres. We elaborate on their unique optical features leading to defect mode lasing, optomicrofluidics, and the existence of WGMs inside shell for light management. Finally, we provide a perspective on the direction towards which future research relevant to hollow spheres might be directed.

Hollow spheres: crucial building blocks for novel nanostructures and nanophotonics

Science.gov (United States)

Zhong, Kuo; Song, Kai; Clays, Koen

2018-03-01

In this review, we summarize the latest developments in research specifically derived from the unique properties of hollow microspheres, in particular, hollow silica spheres with uniform shells. We focus on applications in nanosphere (colloidal) lithography and nanophotonics. The lithography from a layer of hollow spheres can result in nanorings, from a multilayer in unique nano-architecture. In nanophotonics, disordered hollow spheres can result in antireflection coatings, while ordered colloidal crystals (CCs) of hollow spheres exhibit unique refractive index enhancement upon infiltration, ideal for optical sensing. Furthermore, whispering gallery mode (WGM) inside the shell of hollow spheres has also been demonstrated to enhance light absorption to improve the performance of solar cells. These applications differ from the classical applications of hollow spheres, based only on their low density and large surface area, such as catalysis and chemical sensing. We provide a brief overview of the synthesis and self-assembly approaches of the hollow spheres. We elaborate on their unique optical features leading to defect mode lasing, optomicrofluidics, and the existence of WGMs inside shell for light management. Finally, we provide a perspective on the direction towards which future research relevant to hollow spheres might be directed.

Precipitation of lithium in germanium

International Nuclear Information System (INIS)

Masaik, M.; Furgolle, B.

1969-01-01

The precipitation of Lithium in Germanium was studied. Taking account of the interactions Ga LI, LiO, we calculated the oxygen content in germanium samples from the resistivity measurements. (authors)

Co-doping with antimony to control phosphorous diffusion in germanium

KAUST Repository

Tahini, H. A.

2013-02-15

In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.

2014-06-16

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

International Nuclear Information System (INIS)

Cai, Qi; Xu, Baojian; Ye, Lin; Di, Zengfeng; Huang, Shanluo; Du, Xiaowei; Zhang, Jishen; Jin, Qinghui; Zhao, Jianlong

2015-01-01

Highlights: • A simple and effective approach for higly stable germanium passivation. • 1-Dodecanethiol self-assembled monolayers for germanium oxidation resistance. • The influence factors of germanium passivation were systematically studied. • The stability of the passivated Ge was more than 10 days even in water conditions. - Abstract: As a typical semiconductor material, germanium has the potential to replace silicon for future-generation microelectronics, due to its better electrical properties. However, the lack of stable surface state has limited its extensive use for several decades. In this work, we demonstrated highly stable self-assembled monolayers (SAMs) on Ge surface to prevent oxidization for further applications. After the pretreatment in hydrochloric acid, the oxide-free and Cl-terminated Ge could be further coated with 1-dodecanethiol (NDM) SAMs. The influence factors including reaction time, solvent component and reaction temperature were optimized to obtain stable passivated monolayer for oxidation resistance. Contact angle analysis, atomic force microscopy, ellipsometer and X-ray photoelectron spectroscopy were performed to characterize the functionalized Ge surface respectively. Meanwhile, the reaction mechanism and stability of thiols SAMs on Ge (1 1 1) surface were investigated. Finally, highly stable passivated NDM SAMs on Ge surface could be formed through immersing oxide-free Ge in mixture solvent (water/ethanol, v/v = 1:1) at appropriately elevated temperature (∼80 °C) for 24 h. And the corresponding optimized passivated Ge surface was stable for more than 10 days even in water condition, which was much longer than the data reported and paved the way for the future practical applications of Ge.

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Energy Technology Data Exchange (ETDEWEB)

Cai, Qi [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Xu, Baojian, E-mail: xbj@mail.sim.ac.cn [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Shanghai Internet of Things Co., LTD, No. 1455, Pingcheng Road, Shanghai 201899 (China); Ye, Lin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Di, Zengfeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Huang, Shanluo; Du, Xiaowei [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Zhang, Jishen; Jin, Qinghui [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Zhao, Jianlong, E-mail: jlzhao@mail.sim.ac.cn [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China)

2015-10-30

Highlights: • A simple and effective approach for higly stable germanium passivation. • 1-Dodecanethiol self-assembled monolayers for germanium oxidation resistance. • The influence factors of germanium passivation were systematically studied. • The stability of the passivated Ge was more than 10 days even in water conditions. - Abstract: As a typical semiconductor material, germanium has the potential to replace silicon for future-generation microelectronics, due to its better electrical properties. However, the lack of stable surface state has limited its extensive use for several decades. In this work, we demonstrated highly stable self-assembled monolayers (SAMs) on Ge surface to prevent oxidization for further applications. After the pretreatment in hydrochloric acid, the oxide-free and Cl-terminated Ge could be further coated with 1-dodecanethiol (NDM) SAMs. The influence factors including reaction time, solvent component and reaction temperature were optimized to obtain stable passivated monolayer for oxidation resistance. Contact angle analysis, atomic force microscopy, ellipsometer and X-ray photoelectron spectroscopy were performed to characterize the functionalized Ge surface respectively. Meanwhile, the reaction mechanism and stability of thiols SAMs on Ge (1 1 1) surface were investigated. Finally, highly stable passivated NDM SAMs on Ge surface could be formed through immersing oxide-free Ge in mixture solvent (water/ethanol, v/v = 1:1) at appropriately elevated temperature (∼80 °C) for 24 h. And the corresponding optimized passivated Ge surface was stable for more than 10 days even in water condition, which was much longer than the data reported and paved the way for the future practical applications of Ge.

Silicon-Germanium Front-End Electronics for Space-Based Radar Applications

Data.gov (United States)

National Aeronautics and Space Administration — Over the past two decades, Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology has emerged as a strong platform for high-frequency...

New hydrogen donors in germanium

International Nuclear Information System (INIS)

Pokotilo, Yu.M.; Petukh, A.N.; Litvinov, V.V.

2003-01-01

The electrophysical properties of the n-type conductivity germanium, irradiated through protons, is studied by the volt-farad method. It is shown that the heat treatment of the implanted germanium at the temperature of 200-300 deg C leads to formation of the fast-diffusing second-rate donors. It is established that the diffusion coefficient of the identified donors coincides with the diffusion coefficient of the atomic hydrogen with an account of the capture on the traps. The conclusion is made, that the atomic hydrogen is the second-rate donor center in germanium [ru

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

Science.gov (United States)

Sigillito, Anthony James

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a

Radiation exposure during transmission measurements: comparison between CT- and germanium-based techniques with a current PET scanner

International Nuclear Information System (INIS)

Wu, Tung-Hsin; Huang, Yung-Hui; Lee, Jason J.S.; Wang, Shih-Yuan; Wang, Su-Cheng; Su, Cheng-Tau; Chen, Liang-Kung; Chu, Tieh-Chi

2004-01-01

In positron emission tomographic (PET) scanning, transmission measurements for attenuation correction are commonly performed by using external germanium-68 rod sources. Recently, combined PET and computed tomographic (CT) scanners have been developed in which the CT data can be used for both anatomical-metabolic image formation and attenuation correction of the PET data. The purpose of this study was to evaluate the difference between germanium- and CT-based transmission scanning in terms of their radiation doses by using the same measurement technique and to compare the doses that patients receive during brain, cardiac and whole-body scans. Measurement of absorbed doses to organs was conducted by using a Rando Alderson phantom with thermoluminescent dosimeters. Effective doses were calculated according to the guidelines in the International Commission on Radiation Protection Publication Number 60. Compared with radionuclide doses used in routine 2-[fluorine-18]-fluoro-2-deoxy-d-glucose PET imaging, doses absorbed during germanium-based transmission scans were almost negligible. On the other hand, absorbed doses from CT-based transmission scans were significantly higher, particularly with a whole-body scanning protocol. Effective doses were 8.81 mSv in the high-speed mode and 18.97 mSv in the high-quality mode for whole-body CT-based transmission scans. These measurements revealed that the doses received by a patient during CT-based transmission scanning are more than those received in a typical PET examination. Therefore, the radiation doses represent a limitation to the generalised use of CT-based transmission measurements with current PET/CT scanner systems. (orig.)

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

Science.gov (United States)

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

Zone refining high-purity germanium

International Nuclear Information System (INIS)

Hubbard, G.S.; Haller, E.E.; Hansen, W.L.

1977-10-01

The effects of various parameters on germanium purification by zone refining have been examined. These parameters include the germanium container and container coatings, ambient gas and other operating conditions. Four methods of refining are presented which reproducibly yield 3.5 kg germanium ingots from which high purity (vertical barN/sub A/ - N/sub D/vertical bar less than or equal to2 x 10 10 cm -3 ) single crystals can be grown. A qualitative model involving binary and ternary complexes of Si, O, B, and Al is shown to account for the behavior of impurities at these low concentrations

Transport in silicon-germanium heterostructures

International Nuclear Information System (INIS)

Chrastina, Daniel

2001-01-01

The work presented here describes the electrical characterization of n- and p-type strained silicon-germanium systems. Theories of quantum transport m low magnetic fields at low temperature are discussed m terms of weak-localization: the traditional theory is shown not to account for the dephasing in a 2-dimensional hole gas behaving in a metallic manner and emergent alternative theories, while promising, require refinement. The mobility as a function of sheet density is measured in a p-type pseudomorphic Si 0.5 Ge 0.5 across the temperature range 350mK-282K; it is shown that calculations of the mobility based on semi-classical scattering mechanisms fail below 10K where quantum transport effects become relevant. A room temperature Hall scattering factor has been extracted. A new functional form has been presented to fit the resistivity as a function of temperature, below 20K: traditional theories of screening and weak localization appear not to be applicable. It is also demonstrated that simple protection circuitry is essential if commercial-scale devices are to be meaningfully investigated. Mobility spectrum analysis is performed on an n-type strained-silicon device. Established analysis methods are discussed and a new method is presented based on the Bryan's Algorithm approach to maximum entropy. The breakdown of the QHE is also investigated: the critical current density compares well to that predicted by an existing theory. Finally, devices in which both electron and hole gases can be induced are investigated. However, it is shown that the two cannier species never co-exist. Design rules are presented which may allow more successful structures to be created. Results are presented which demonstrate the success and the utility of implanted contacts which selectively reach different regions of the structure. (author)

The Influence of Parameters of Ink-Jet Printing on Photoluminescence Properties of Nanophotonic Labels Based on Ag Nanoparticles for Smart Packaging

Directory of Open Access Journals (Sweden)

Olha Hrytsenko

2017-01-01

Full Text Available Ag nanoparticles are perspective for the use in ink-jet printed smart packaging labels in order to protect a customer from counterfeit or inform them about the safety of consumption of a packaged product via changeable luminescence properties. It is determined that, to obtain printed images with the highest luminescence intensity, using the most technologically permissible concentration of fluorescent component in the ink composition and applying inks to papers with the lowest absorbance are recommended. The highest contrast of a tone fluorescent image can be obtained on papers with high degree of sizing. It is found that the use of papers with low optical brightness agent (OBA content with a wide range of luminescence intensity allows obtaining the same visual legibility of a printed nanophotonic label. The increase in the relative area of raster elements of an image leads to nonlinear increase in luminescence intensity of printed images in long-wave area of visible spectrum, affecting the luminescence color of a printed label. For wide industrial production of printed nanophotonic labels for smart packaging, the created principles of reproduction of nanophotonic images applied onto paper materials by ink-jet printing technique using printing inks containing Ag nanoparticles should be taken into account.

Quantifying losses and thermodynamics limits in nanophotonic solar cells

NARCIS (Netherlands)

Mann, S.A.; Oener, S.Z.; Cavalli, A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Garnett, E.C.

2016-01-01

Nanophotonic engineering shows great potential for photovoltaics: the record conversion efficiencies of nanowire solar cells are increasing rapidly1,2 and the record open-circuit voltages are becoming comparable to the records for planar equivalents3,4. Furthermore, it has been suggested that

Gamma ray polarimetry using a position sensitive germanium detector

CERN Document Server

Kroeger, R A; Kurfess, J D; Phlips, B F

1999-01-01

Imaging gamma-ray detectors make sensitive polarimeters in the Compton energy regime by measuring the scatter direction of gamma rays. The principle is to capitalize on the angular dependence of the Compton scattering cross section to polarized gamma rays and measure the distribution of scatter directions within the detector. This technique is effective in a double-sided germanium detector between roughly 50 keV and 1 MeV. This paper reviews device characteristics important to the optimization of a Compton polarimeter, and summarizes measurements we have made using a device with a 5x5 cm active area, 1 cm thickness, and strip-electrodes on a 2 mm pitch.

Influence of Parameters of Screen Printing on Photoluminescence Properties of Nanophotonic Labels for Smart Packaging

Directory of Open Access Journals (Sweden)

Olha Hrytsenko

2017-01-01

Full Text Available Smart packaging is becoming more popular on world market as a new type of packaging able to react to changes in a packaged product during storage and informs a customer about the safety of consumption of packaged food. This article investigates the main technological issues of the use of nanophotonic printing inks based on ZnO/SiO2 nanoparticles and polyvinylpyrrolidone (PVP for printing active elements of smart packaging on paper substrates, concerning material properties and parameters of screen printing. It is determined that the use of ink compositions with medium content of ZnO/SiO2 nanoparticles allows obtaining blue-green and blue shades of luminescence color of screen printed images by changing ink layer thickness on papers with different contents of optical brightness agents (OBAs. The minimum content of ZnO/SiO2 nanoparticles in the developed fluorescent inks leads to blue luminescence colors regardless the contents of OBAs of the papers and ink layer thickness. The luminescence intensity is directly proportional to ink layer thickness and partly depends on the content of OBAs in the selected paper. In order to fabricate nanophotonic elements of smart packaging with predetermined photoluminescence properties, the influence of investigated factors on photoluminescence properties of printed nanophotonic labels should be taken into account.

Modeling open nanophotonic systems using the Fourier modal method: Generalization to 3D Cartesian coordinates

DEFF Research Database (Denmark)

Häyrynen, Teppo; Østerkryger, Andreas Dyhl; de Lasson, Jakob Rosenkrantz

2017-01-01

Recently, an open geometry Fourier modal method based on a new combination ofan open boundary condition and a non-uniform $k$-space discretization wasintroduced for rotationally symmetric structures providing a more efficientapproach for modeling nanowires and micropillar cavities [J. Opt. Soc. A...... moreaccurate and efficient modeling of open 3D nanophotonic structures....

Tissues viability and blood flow sensing based on a new nanophotonics method

Science.gov (United States)

Yariv, Inbar; Haddad, Menashe; Duadi, Hamootal; Motiei, Menachem; Fixler, Dror

2018-02-01

Extracting optical parameters of turbid medium (e.g. tissue) by light reflectance signals is of great interest and has many applications in the medical world, life science, material analysis and biomedical optics. The reemitted light from an irradiated tissue is affected by the light's interaction with the tissue components and contains the information about the tissue structure and physiological state. In this research we present a novel noninvasive nanophotonics technique, i.e., iterative multi-plane optical property extraction (IMOPE) based on reflectance measurements. The reflectance based IMOPE was applied for tissue viability examination, detection of gold nanorods (GNRs) within the blood circulation as well as blood flow detection using the GNRs presence within the blood vessels. The basics of the IMOPE combine a simple experimental setup for recording light intensity images with an iterative Gerchberg-Saxton (G-S) algorithm for reconstructing the reflected light phase and computing its standard deviation (STD). Changes in tissue composition affect its optical properties which results in changes in the light phase that can be measured by its STD. This work presents reflectance based IMOPE tissue viability examination, producing a decrease in the computed STD for older tissues, as well as investigating their organic material absorption capability. Finally, differentiation of the femoral vein from adjacent tissues using GNRs and the detection of their presence within blood circulation and tissues are also presented with high sensitivity (better than computed tomography) to low quantities of GNRs (<3 mg).

Nonlinear nanophotonic and nanoplasmonic directional couplers: comparison of modelling methods

Czech Academy of Sciences Publication Activity Database

Koška, Pavel; Petráček, J.; Kwiecien, P.; Luksch, J.; Richter, I.; Čtyroký, Jiří

2015-01-01

Roč. 47, č. 9 (2015), s. 3201-3212 ISSN 0306-8919 Institutional support: RVO:67985882 Keywords : Integrated optics * All-optical switching * Nanophotonics Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.290, year: 2015

Silicon Nano-Photonic Devices

DEFF Research Database (Denmark)

Pu, Minhao

with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...... lters based on tunable microring resonators are proposed and analyzed. Based on a single microring resonator, a maximum radio frequency (RF) phase shift of 336degrees is obtained, but with large power variation. By utilizing a dual-microring resonator, a RF phase shifting range larger than 2pi...

Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Science.gov (United States)

Kelly, David Quest

After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

Metal induced crystallization of silicon germanium alloys

Energy Technology Data Exchange (ETDEWEB)

Gjukic, M.

2007-05-15

In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

Planarized nanophotonic sensor for real-time fluid sensing

Directory of Open Access Journals (Sweden)

Yazhao Liu

2017-09-01

Full Text Available A planarized on-chip nanophotonic sensor based on a photonic crystal cavity is realized in this work. The sensor was embedded in a solid protecting material (flowable oxide with perfect filled holes: this eliminates problems of fouling in practical applications. The functional area of the sensor is created by carefully removing the protecting material only on the top surface of the cavity. A wavelength shift of 7.5 nm was observed in experiment which is very close to a simulation result of 9.0 nm for sensing water (n=1.33 and crude oil (n=1.45 samples. Swift and accurate sensing was verified by a real-time dynamic measurement with rapidly alternating analytes in a microfluid channel.

Non-local electrical spin injection and detection in germanium at room temperature

Science.gov (United States)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Nano-photonic light trapping near the Lambertian limit in organic solar cell architectures.

Science.gov (United States)

Biswas, Rana; Timmons, Erik

2013-09-09

A critical step to achieving higher efficiency solar cells is the broad band harvesting of solar photons. Although considerable progress has recently been achieved in improving the power conversion efficiency of organic solar cells, these cells still do not absorb upto ~50% of the solar spectrum. We have designed and developed an organic solar cell architecture that can boost the absorption of photons by 40% and the photo-current by 50% for organic P3HT-PCBM absorber layers of typical device thicknesses. Our solar cell architecture is based on all layers of the solar cell being patterned in a conformal two-dimensionally periodic photonic crystal architecture. This results in very strong diffraction of photons- that increases the photon path length in the absorber layer, and plasmonic light concentration near the patterned organic-metal cathode interface. The absorption approaches the Lambertian limit. The simulations utilize a rigorous scattering matrix approach and provide bounds of the fundamental limits of nano-photonic light absorption in periodically textured organic solar cells. This solar cell architecture has the potential to increase the power conversion efficiency to 10% for single band gap organic solar cells utilizing long-wavelength absorbers.

Quantum interference magnetoconductance of polycrystalline germanium films in the variable-range hopping regime

Science.gov (United States)

Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Zhan, Zhiqiang; Wu, Weidong

2018-06-01

Direct evidence of quantum interference magnetotransport in polycrystalline germanium films in the variable-range hopping (VRH) regime is reported. The temperature dependence of the conductivity of germanium films fulfilled the Mott VRH mechanism with the form of ? in the low-temperature regime (?). For the magnetotransport behaviour of our germanium films in the VRH regime, a crossover, from negative magnetoconductance at the low-field to positive magnetoconductance at the high-field, is observed while the zero-field conductivity is higher than the critical value (?). In the regime of ?, the magnetoconductance is positive and quadratic in the field for some germanium films. These features are in agreement with the VRH magnetotransport theory based on the quantum interference effect among random paths in the hopping process.

Visible Quantum Nanophotonics.

Energy Technology Data Exchange (ETDEWEB)

Subramania, Ganapathi Subramanian [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wang, George T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fischer, Arthur J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wierer, Jonathan J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Tsao, Jeffrey Y. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Koleske, Daniel [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Coltrin, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Agarwal, Sapan [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Anderson, P. Duke [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Leung, Ben [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-09-01

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDs into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.

Germanium content in Polish hard coals

Directory of Open Access Journals (Sweden)

Makowska Dorota

2016-01-01

Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

Niobium nitride Josephson junctions with silicon and germanium barriers

International Nuclear Information System (INIS)

Cukauskas, E.J.; Carter, W.L.

1988-01-01

Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

Nano-photonics: past and present

Science.gov (United States)

Szu, Harold

2010-04-01

Nanotech is at the scale of 10-9 meters, located at the mesocopic transition phase, which can take both classical mechanics (CM) and quantum mechanics (QM) descriptions bridging ten orders of magnitude phenomena, between the microscopic world of a single atom at 10-10 meters with the macroscopic world at meters. However, QM principles aid the understanding of any unusual property at the nanotech level. The other major difference between nano-photonics and other forms of optics is that the nano-scale is not very 'hands on'. For the most part, we will not be able to see the components with our naked eyes, but will be required to use some nanotech imaging tools, as follows:

Status report on the International Germanium Experiment

International Nuclear Information System (INIS)

Brodzinski, R.L.; Avignone, F.T.; Collar, J.I.; Courant, H.; Garcia, E.; Guerard, C.K.; Hensley, W.K.; Kirpichnikov, I.V.; Miley, H.S.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Osetrov, S.B.; Pogosov, V.S.; Pomansky, A.A.; Puimedon, J.; Reeves, J.H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M.L.; Smolnikov, A.A.; Starostin, A.S.; Tamanyan, A.G.; Vasiliev, S.I.; Villar, J.A.

1993-01-01

Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic 7 Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported. (orig.)

Status report on the International Germanium Experiment

Energy Technology Data Exchange (ETDEWEB)

Brodzinski, R L; Avignone, F.T.; Collar, J I; Courant, H; Garcia, E; Guerard, C K; Hensley, W K; Kirpichnikov, I V; Miley, H S; Morales, A; Morales, J; Nunez-Lagos, R; Osetrov, S B; Pogosov, V S; Pomansky, A A; Puimedon, J; Reeves, J H; Ruddick, K; Saenz, C; Salinas, A; Sarsa, M L; Smolnikov, A A; Starostin, A S; Tamanyan, A G; Vasiliev, S I; Villar, J A [Pacific Northwest Lab., Richland, WA (United States) Univ. of South Carolina, Columbia, SC (United States) Univ. of Minnesota, Minneapolis, MN (United States) Univ. of Zaragoza (Spain) Inst. for Theoretical and Experimental Physics, Moscow (Russian Federation) Inst. for Nuclear Research, Baksan Neutrino Observatory (Russian Federation) Yerevan Physical Inst., Yerevan (Armenia)

1993-04-01

Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic [sup 7]Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported. (orig.)

DNA nanotechnology for nanophotonic applications.

Science.gov (United States)

Samanta, Anirban; Banerjee, Saswata; Liu, Yan

2015-02-14

DNA nanotechnology has touched the epitome of miniaturization by integrating various nanometer size particles with nanometer precision. This enticing bottom-up approach has employed small DNA tiles, large multi-dimensional polymeric structures or more recently DNA origami to organize nanoparticles of different inorganic materials, small organic molecules or macro-biomolecules like proteins, and RNAs into fascinating patterns that are difficult to achieve by other conventional methods. Here, we are especially interested in the self-assembly of nanomaterials that are potentially attractive elements in the burgeoning field of nanophotonics. These materials include plasmonic nanoparticles, quantum dots, fluorescent organic dyes, etc. DNA based self-assembly allows excellent control over distance, orientation and stoichiometry of these nano-elements that helps to engineer intelligent systems that can potentially pave the path for future technology. Many outstanding structures have been fabricated that are capable of fine tuning optical properties, such as fluorescence intensity and lifetime modulation, enhancement of Raman scattering and emergence of circular dichroism responses. Within the limited scope of this review we have tried to give a glimpse of the development of this still nascent but highly promising field to its current status as well as the existing challenges before us.

A high resolution germanium detector array for hypernuclear studies at PANDA

Energy Technology Data Exchange (ETDEWEB)

Bleser, Sebastian; Sanchez Lorente, Alicia; Steinen, Marcell [Helmholtz-Institut Mainz (Germany); Gerl, Juergen; Kojouharova, Jasmina; Kojouharov, Ivan [GSI Darmstadt (Germany); Iazzi, Felice [Politecnico, Torino (Italy); INFN, Torino (Italy); Pochodzalla, Josef; Rittgen, Kai; Sahin, Cihan [Institute for Nuclear Physics, JGU Mainz (Germany)

2014-07-01

The PANDA experiment, planned at the FAIR facility in Darmstadt, aims at the high resolution γ-spectroscopy of double Λ hypernuclei. For this purpose a devoted detector setup is required, consisting of a primary nuclear target, an active secondary target and a germanium detector array for the γ-spectroscopy. Due to the limited space within the PANDA detector a compact design is required. In particular the conventional LN{sub 2} cooling system must be replaced by an electro mechanical device and a new arrangement of the crystals is needed. This presentation shows the progress in the development of the germanium detectors. First results of in-beam measurements at COSY with a new electro mechanically cooled single crystal prototype are presented. Digital pulse shape analysis is used to disentangle pile up events due to the high event rate. This analysis technique also allows to recover the high original energy resolution in case of neutron damage. Finally the status of the new triple crystal detector prototype is given.

Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

Science.gov (United States)

Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

2015-05-06

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

Imaging capabilities of germanium gamma cameras

International Nuclear Information System (INIS)

Steidley, J.W.

1977-01-01

Quantitative methods of analysis based on the use of a computer simulation were developed and used to investigate the imaging capabilities of germanium gamma cameras. The main advantage of the computer simulation is that the inherent unknowns of clinical imaging procedures are removed from the investigation. The effects of patient scattered radiation were incorporated using a mathematical LSF model which was empirically developed and experimentally verified. Image modifying effects of patient motion, spatial distortions, and count rate capabilities were also included in the model. Spatial domain and frequency domain modeling techniques were developed and used in the simulation as required. The imaging capabilities of gamma cameras were assessed using low contrast lesion source distributions. The results showed that an improvement in energy resolution from 10% to 2% offers significant clinical advantages in terms of improved contrast, increased detectability, and reduced patient dose. The improvements are of greatest significance for small lesions at low contrast. The results of the computer simulation were also used to compare a design of a hypothetical germanium gamma camera with a state-of-the-art scintillation camera. The computer model performed a parametric analysis of the interrelated effects of inherent and technological limitations of gamma camera imaging. In particular, the trade-off between collimator resolution and collimator efficiency for detection of a given low contrast lesion was directly addressed. This trade-off is an inherent limitation of both gamma cameras. The image degrading effects of patient motion, camera spatial distortions, and low count rate were shown to modify the improvements due to better energy resolution. Thus, based on this research, the continued development of germanium cameras to the point of clinical demonstration is recommended

Measurement of the quantum conductance of germanium by an electrochemical scanning tunneling microscope break junction based on a jump-to-contact mechanism.

Science.gov (United States)

Xie, Xufen; Yan, Jiawei; Liang, Jinghong; Li, Jijun; Zhang, Meng; Mao, Bingwei

2013-10-01

We present quantum conductance measurements of germanium by means of an electrochemical scanning tunneling microscope (STM) break junction based on a jump-to-contact mechanism. Germanium nanowires between a platinum/iridium tip and different substrates were constructed to measure the quantum conductance. By applying appropriate potentials to the substrate and the tip, the process of heterogeneous contact and homogeneous breakage was realized. Typical conductance traces exhibit steps at 0.025 and 0.05 G0. The conductance histogram indicates that the conductance of germanium nanowires is located between 0.02 and 0.15 G0 in the low-conductance region and is free from the influence of substrate materials. However, the distribution of conductance plateaus is too discrete to display distinct peaks in the conductance histogram of the high-conductance region. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cryogenic readout techniques for germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Benato, G. [University of Zurich, (Switzerland); Cattadori, C. [INFN - Milano Bicocca, (Italy); Di Vacri, A. [INFN LNGS, (Italy); Ferri, E. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy); D' Andrea, V.; Macolino, C. [GSSI/INFN LNGS, (Italy); Riboldi, S. [Universita degli Studi di Milano/INFN Milano, (Italy); Salamida, F. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy)

2015-07-01

High Purity Germanium detectors are used in many applications, from nuclear and astro-particle physics, to homeland security or environment protection. Although quite standard configurations are often used, with cryostats, charge sensitive amplifiers and analog or digital acquisition systems all commercially available, it might be the case that a few specific applications, e.g. satellites, portable devices, cryogenic physics experiments, etc. also require the development of a few additional or complementary techniques. An interesting case is for sure GERDA, the Germanium Detector Array experiment, searching for neutrino-less double beta decay of {sup 76}Ge at the Gran Sasso National Laboratory of INFN - Italy. In GERDA the entire detector array, composed of semi-coaxial and BEGe naked crystals, is operated suspended inside a cryostat filled with liquid argon, that acts not only as cooling medium and but also as an active shield, thanks to its scintillation properties. These peculiar circumstances, together with the additional requirement of a very low radioactive background from all the materials adjacent to the detectors, clearly introduce significant constraints on the design of the Ge front-end readout electronics. All the Ge readout solutions developed within the framework of the GERDA collaboration, for both Phase I and Phase II, will be briefly reviewed, with their relative strength and weakness compared together and with respect to ideal Ge readout. Finally, the digital processing techniques developed by the GERDA collaboration for energy estimation of Ge detector signals will be recalled. (authors)

Next Generation Germanium Systems for Safeguards Applications

International Nuclear Information System (INIS)

Dreyer, J.; Burks, M.; Hull, E.

2015-01-01

We are developing the latest generation of highly portable, mechanically cooled germanium systems for safeguard applications. In collaboration with our industrial partner, Ph.D.s Co, we have developed the Germanium Gamma Ray Imager (GeGI), an imager with a 2π field of view. This instrument has been thoroughly field tested in a wide range of environments and have performed reliably even in the harshest conditions. The imaging capability of GeGI complements existing safeguards techniques by allowing for the spatial detection, identification, and characterization of nuclear material. Additionally, imaging can be used in design information verification activities to address potential material diversions. Measurements conducted at the Paducah Gaseous Diffusion Plant highlight the advantages this instrument offers in the identification and localization of LEU, HEU and Pu holdup. GeGI has also been deployed to the Savannah River Site for the measurement of radioactive waste canisters, providing information valuable for waste characterization and inventory accountancy. Measuring 30 x 15 x 23 cm and weighing approximately 15 kg, this instrument is the first portable germanium-based imager. GeGI offers high reliability with the convenience of mechanical cooling, making this instrument ideal for the next generation of safeguards instrumentation. (author)

Young’s modulus of [111] germanium nanowires

Energy Technology Data Exchange (ETDEWEB)

Maksud, M.; Palapati, N. K. R.; Subramanian, A., E-mail: asubramanian@vcu.edu [Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Yoo, J. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Harris, C. T. [Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

2015-11-01

This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

Smooth germanium nanowires prepared by a hydrothermal deposition process

Energy Technology Data Exchange (ETDEWEB)

Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

2009-11-15

Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

Smooth germanium nanowires prepared by a hydrothermal deposition process

International Nuclear Information System (INIS)

Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Fan, C.G.; Zhang, Qian-Feng

2009-01-01

Smooth germanium nanowires were prepared using Ge and GeO 2 as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

Science.gov (United States)

Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

2009-01-01

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Physical models of semiconductor quantum devices

CERN Document Server

Fu, Ying

2013-01-01

The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

Science.gov (United States)

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

2006-09-21

results are the first fundamental steps toward demonstrating the viability of the amorphous germanium contacts for much larger segmented p-type coaxial detectors. Large segmented p-type coaxial detectors based on this technology could serve as the gamma-ray spectrometers on instruments such as the Radionuclide Aerosol Sampler/Analyzer (RASA). These detectors will provide a more sensitive, lower background measurement than currently available unsegmented p-type coaxial detectors.

Neutron-transmutation-doped germanium bolometers

International Nuclear Information System (INIS)

Palaio, N.P.; Rodder, M.; Haller, E.E.; Kreysa, E.

1983-02-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 16 and 1.88 x 10 18 cm - 2 . After thermal annealing the resistivity was measured down to low temperatures ( 0 exp(δ/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers

Germanium detector studies in the framework of the GERDA experiment

Energy Technology Data Exchange (ETDEWEB)

Budjas, Dusan

2009-05-06

The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

Germanium soup

Science.gov (United States)

Palmer, Troy A.; Alexay, Christopher C.

2006-05-01

This paper addresses the variety and impact of dispersive model variations for infrared materials and, in particular, the level to which certain optical designs are affected by this potential variation in germanium. This work offers a method for anticipating and/or minimizing the pitfalls such potential model variations may have on a candidate optical design.

Germanium-overcoated niobium Dayem bridges

International Nuclear Information System (INIS)

Holdeman, L.B.; Peters, P.N.

1976-01-01

Overcoating constriction microbridges with semiconducting germanium provides additional thermal conductivity at liquid-helium temperatures to reduce the effects of self-heating in these Josephson junctions. Microwave-induced steps were observed in the I-V characteristics of an overcoated Dayem bridge fabricated in a 15-nm-thick niobium film; at 4.2 K (T/sub c/-T=2.6 K), at least 20 steps could be counted. No steps were observed in the I-V characteristics of the bridge prior to overcoating. In addition, the germanium overcoat can protect against electrical disturbances at room temperature

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

Science.gov (United States)

Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

2002-01-01

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

Manufacturing P-N junctions in germanium bodies

International Nuclear Information System (INIS)

Hall, R.N.

1980-01-01

A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

Design of nanophotonic circuits for autonomous subsystem quantum error correction

Energy Technology Data Exchange (ETDEWEB)

Kerckhoff, J; Pavlichin, D S; Chalabi, H; Mabuchi, H, E-mail: jkerc@stanford.edu [Edward L Ginzton Laboratory, Stanford University, Stanford, CA 94305 (United States)

2011-05-15

We reapply our approach to designing nanophotonic quantum memories in order to formulate an optical network that autonomously protects a single logical qubit against arbitrary single-qubit errors. Emulating the nine-qubit Bacon-Shor subsystem code, the network replaces the traditionally discrete syndrome measurement and correction steps by continuous, time-independent optical interactions and coherent feedback of unitarily processed optical fields.

Cosmogenic activation of germanium used for tonne-scale rare event search experiments

Science.gov (United States)

Wei, W.-Z.; Mei, D.-M.; Zhang, C.

2017-11-01

We report a comprehensive study of cosmogenic activation of germanium used for tonne-scale rare event search experiments. The germanium exposure to cosmic rays on the Earth's surface are simulated with and without a shielding container using Geant4 for a given cosmic muon, neutron, and proton energy spectrum. The production rates of various radioactive isotopes are obtained for different sources separately. We find that fast neutron induced interactions dominate the production rate of cosmogenic activation. Geant4-based simulation results are compared with the calculation of ACTIVIA and the available experimental data. A reasonable agreement between Geant4 simulations and several experimental data sets is presented. We predict that cosmogenic activation of germanium can set limits to the sensitivity of the next generation of tonne-scale experiments.

Atomic ionization of germanium by neutrinos from an ab initio approach

International Nuclear Information System (INIS)

Chen, Jiunn-Wei; Chi, Hsin-Chang; Huang, Keh-Ning; Liu, C.-P.; Shiao, Hao-Tse; Singh, Lakhwinder; Wong, Henry T.; Wu, Chih-Liang; Wu, Chih-Pan

2014-01-01

An ab initio calculation of atomic ionization of germanium by neutrinos was carried out in the framework of multiconfiguration relativistic random phase approximation and benchmarked by related atomic structure and photoabsorption data. This improves over the conventional approach based on scattering off free electrons whose validity at sub-keV energy transfer is questionable. Limits on neutrino magnetic moments are derived using reactor neutrino data taken with low threshold germanium detectors. Future applications of these atomic techniques will greatly reduce the atomic uncertainties in low-energy neutrino and dark matter detections.

A high resolution germanium detector array for hypernuclear studies at PANDA

Energy Technology Data Exchange (ETDEWEB)

Bleser, Sebastian; Sanchez Lorente, Alicia; Steinen, Marcell [Helmholtz-Institut Mainz (Germany); Gerl, Juergen; Kojouharov, Ivan [GSI, Darmstadt (Germany); Iazzi, Felice [Politecnico, Torino, Turin (Italy); INFN, Torino, Turin (Italy); Pochodzalla, Josef; Rittgen, Kai; Sahin, Cihan [Institute for Nuclear Physics, JGU Mainz (Germany); Collaboration: PANDA-Collaboration

2013-07-01

The PANDA experiment, planned at the FAIR facility in Darmstadt, aims at the high resolution γ-spectroscopy of double Λ hypernuclei. For this purpose a devoted detector setup is required, consisting of a primary nuclear target, an active secondary target and a germanium detector array for the γ-spectroscopy. Due to the limited space within the PANDA detector a compact design is required. In particular the conventional LN{sub 2} cooling system must be replaced by an electro-mechanical device and a new arrangement of the crystals is needed. This poster shows the ongoing development of the germanium detectors. Test measurements of a single crystal prototype with an improved cooling concept are shown. Thermal simulations for a triple crystal detector are presented. Aditionally studies of the optimization of the detector arrangement inside the PANDA barrel spectrometer are shown. Finally the status on digital pulse shape analysis is presented which will be necessary to deal with high counting rates and to recover the high original energy resolution in case of neutron damage.

Focused-ion beam patterning of organolead trihalide perovskite for subwavelength grating nanophotonic applications

KAUST Repository

Alias, Mohd Sharizal

2015-07-30

The coherent amplified spontaneous emission and high photoluminescence quantum efficiency of organolead trihalide perovskite have led to research interest in this material for use in photonic devices. In this paper, the authors present a focused-ion beam patterning strategy for methylammonium lead tribromide (MAPbBr3) perovskite crystal for subwavelength grating nanophotonic applications. The essential parameters for milling, such as the number of scan passes, dwell time, ion dose, ion current, ion incident angle, and gas-assisted etching, were experimentally evaluated to determine the sputtering yield of the perovskite. Based on our patterning conditions, the authors observed that the sputtering yield ranged from 0.0302 to 0.0719 μm3/pC for the MAPbBr3 perovskite crystal. Using XeF2 for the focused-ion beam gas-assisted etching, the authors determined that the etching rate was reduced to between 0.40 and 0.97, depending on the ion dose, compared with milling with ions only. Using the optimized patterning parameters, the authors patterned binary and circular subwavelength grating reflectors on the MAPbBr3 perovskite crystal using the focused-ion beam technique. Based on the computed grating structure with around 97% reflectivity, all of the grating dimensions (period, duty cycle, and grating thickness) were patterned with nanoscale precision (>±3 nm), high contrast, and excellent uniformity. Our results provide a platform for utilizing the focused-ion beam technique for fast prototyping of photonic nanostructures or nanodevices on organolead trihalide perovskite.

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

Energy Technology Data Exchange (ETDEWEB)

Svarnas, P., E-mail: svarnas@ece.upatras.gr [High Voltage Laboratory, Department of Electrical and Computer Engineering, University of Patras, Rion 26 504, Patras (Greece); Botzakaki, M.A. [Department of Physics, University of Patras, Rion 26 504 (Greece); Skoulatakis, G.; Kennou, S.; Ladas, S. [Surface Science Laboratory, Department of Chemical Engineering, University of Patras, Rion 26 504 (Greece); Tsamis, C. [NCSR “Demokritos”, Institute of Advanced Materials, Physicochemical Processes, Nanotechnology & Microsystems, Aghia Paraskevi 15 310, Athens (Greece); Georga, S.N.; Krontiras, C.A. [Department of Physics, University of Patras, Rion 26 504 (Greece)

2016-01-29

It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400 °C. Different techniques, implementing quite complicated plasma setups, gas mixtures and substrate heating, have been used in order to grow a stable germanium oxide. In the present work a traditional “RF diode” is used for germanium oxidation by cold plasma. Following growth, X-ray photoelectron spectroscopy demonstrates that traditional capacitively driven radio frequency discharges, using molecular oxygen as sole feedstock gas, provide the possibility of germanium dioxide layer growth in a fully reproducible and controllable manner. Post treatment ex-situ analyses on day-scale periods disclose the stability of germanium oxide at room ambient conditions, offering thus the ability to grow (ex-situ) ultra-thin high-k dielectrics on top of germanium oxide layers. Atomic force microscopy excludes any morphological modification in respect to the bare germanium surface. These results suggest a simple method for a controllable and stable germanium oxide growth, and contribute to the challenge to switch to high-k dielectrics as gate insulators for high-performance metal-oxide-semiconductor field-effect transistors and to exploit in large scale the superior properties of germanium as an alternative channel material in future technology nodes. - Highlights: • Simple one-frequency reactive ion etcher develops GeO{sub 2} thin layers controllably. • The layers remain chemically stable at ambient conditions over day-scale periods. • The layers are unaffected by the ex-situ deposition of high-k dielectrics onto them. • GeO{sub 2} oxidation and high-k deposition don't affect the Ge morphology significantly. • These conditions contribute to improved Ge-based MOS structure fabrication.

Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

2009-12-07

Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

The germination of germanium

Science.gov (United States)

Burdette, Shawn C.; Thornton, Brett F.

2018-02-01

Shawn C. Burdette and Brett F. Thornton explore how germanium developed from a missing element in Mendeleev's periodic table to an enabler for the information age, while retaining a nomenclature oddity.

Structure of compensating centers in neutron irradiated n-type germanium

International Nuclear Information System (INIS)

Erchak, D.P.; Kosobutskij, V.S.; Stel'makh, V.F.

1989-01-01

Structural model of one of the main compensating defects of Ge-M1, Ge-M5, Ge-M6 in neutron irradiated (10 18 -10 20 cm -2 ) germanium, strongly alloyed (2x10 18 -3x10 19 cm -3 ) with antimony, phosphorus and arsenic respectively, is suggested. The above mentioned compensating centers are paramagnetic in a positive charge state and represent a vacancy, two nearby germanium atoms of which are replaced with two atoms of corresponding fine donor impurity. It is mainly contributed (63%- for Ge-M5 centers, 56% - for Ge-M6 centers) by orbitals of two germanium atoms neighbouring the vacancy. The angle of the bonds of each of two mentioned germanium atoms with its three neighbours and orientation of maximum electron density of hybride orbital, binding both germanium atoms, is approximately by 5 deg greater the tetrahedral one

Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

Energy Technology Data Exchange (ETDEWEB)

Stegmaier, M.; Ebert, J.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany); Meckbach, J. M.; Ilin, K.; Siegel, M. [Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

2014-03-03

Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

Silver-compensated germanium center in α-quartz

International Nuclear Information System (INIS)

Laman, F.C.; Weil, J.A.

1977-01-01

A synthetic germanium-doped crystal of α-quartz was subjected to an electro-diffusion process (ca. 600 V/cm, 625 0 K), in which Ag + ions were introduced along the crystal's optic axis (c). A 9800 MHz electron paramagnetic resonance spectrum at room temperature, taken after room temperature X-irradiation, revealed the presence of a silver-compensated germanium center Asub(Ge-Ag) with large, almost isotropic 107 Ag and 109 Ag hyperfine splittings. Measurement of the spin-Hamiltonian discloses that a suitable model for the observed center utilizes germanium, substituted for silicon, with the accompanying silver interstitial in a nearby c-axis channel, and with electronic structure in which an appreciable admixture Ge 4+ - Ag 0 to Ge 3+ - Ag + exists. Estimates of the unpaired electron orbital are presented. (author)

Neutron-transmutation-doped germanium bolometers

Science.gov (United States)

Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

1983-01-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Energy Technology Data Exchange (ETDEWEB)

Liu, Yong [Iowa State Univ., Ames, IA (United States)

2002-01-01

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H₂, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

Science.gov (United States)

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

Nonthermal plasma synthesis of size-controlled, monodisperse, freestanding germanium nanocrystals

International Nuclear Information System (INIS)

Gresback, Ryan; Holman, Zachary; Kortshagen, Uwe

2007-01-01

Germanium nanocrystals may be of interest for a variety of electronic and optoelectronic applications including photovoltaics, primarily due to the tunability of their band gap from the infrared into the visible range of the spectrum. This letter discusses the synthesis of monodisperse germanium nanocrystals via a nonthermal plasma approach which allows for precise control of the nanocrystal size. Germanium crystals are synthesized from germanium tetrachloride and hydrogen entrained in an argon background gas. The crystal size can be varied between 4 and 50 nm by changing the residence times of crystals in the plasma between ∼30 and 440 ms. Adjusting the plasma power enables one to synthesize fully amorphous or fully crystalline particles with otherwise similar properties

Nanophotonic-Engineered Photothermal Harnessing for Waste Heat Management and Pyroelectric Generation.

Science.gov (United States)

Wang, Xiao-Qiao; Tan, Chuan Fu; Chan, Kwok Hoe; Xu, Kaichen; Hong, Minghui; Kim, Sang-Woo; Ho, Ghim Wei

2017-10-24

At present, there are various limitations to harvesting ambient waste heat which include the lack of economically viable material and innovative design features that can efficiently recover low grade heat for useful energy conversion. In this work, a thermal nanophotonic-pyroelectric (TNPh-pyro) scheme consisting of a metamaterial multilayer and pyroelectric material, which performs synergistic waste heat rejection and photothermal heat-to-electricity conversion, is presented. Unlike any other pyroelectric configuration, this conceptual design deviates from the conventional by deliberately employing back-reflecting NIR to enable waste heat reutilization/recuperation to enhance pyroelectric generation, avoiding excessive solar heat uptake and also retaining high visual transparency of the device. Passive solar reflective cooling up to 4.1 °C is demonstrated. Meanwhile, the photothermal pyroelectric performance capitalizing on the back-reflecting effect shows an open circuit voltage (V oc ) and short circuit current (I sc ) enhancement of 152 and 146%, respectively. In addition, the designed photoactive component (TiO 2 /Cu) within the metamaterial multilayer provides the TNPh-pyro system with an effective air pollutant photodegradation functionality. Finally, proof-of-concept for concurrent photothermal management and enhanced solar pyroelectric generation under a real outdoor environment is demonstrated.

Radiation-electromagnetic effect in germanium monocrystals

International Nuclear Information System (INIS)

Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

1980-01-01

Experimentally investigated is the radiation-electromagnetic effect (REM) in germanium monocrystals on excitation of excess current carriers by α particles, protons and X-rays in magnetic fields up to 8 kOe. A cyclotron was used as an α particle source, and a standard X-ray tube with a copper anode - as an X-ray source. The e.m.f. of the REM effect linearly increases with the increase of the magnetic field and is proportional to the charged particle flux at small flux values, saturation occurs at great flux values (approximately 5x10 11 part./cm 2 xs). In the 4-40 MeV energy range the e.m.f. of the REM effect practically does not depend on the α particle energy. On irradiation of the samples with a grinding front surface the REM e.m.f. changes its sign. The REM and Hall effect measurement on α particle irradiated samples has shown that during irradiation a p-n transition is formed in the samples, which must be taken into account while studying the REM effect. The e.m.f. measured for the even REM effect quadratically increases with the magnetic field increase. The barrier radiation-voltaic effect (the effect e.m.f. is measured between the irradiated and nonirradiated sample faces) is studied. Using special masks the samples with a set of consecutive p-n transitions are produced by irradiation of germanium crystals by α particles. Investigation of the photovoltaic and photoelectromagnetic effects on such samples has shown that using this method the efficiency of the REM devices can be increased

Mesostructured germanium with cubic pore symmetry

Energy Technology Data Exchange (ETDEWEB)

Armatas, G S; Kanatzidis, M G [Michigan State Univ., Michigan (United States), Dept. of Chemistry

2006-11-15

Regular mesoporous oxide materials have been widely studied and have a range of potential applications, such as catalysis, absorption and separation. They are not generally considered for their optical and electronic properties. Elemental semiconductors with nanopores running through them represent a different form of framework material with physical characteristics contrasting with those of the more conventional bulk, thin film and nanocrystalline forms. Here we describe cubic meso structured germanium, MSU-Ge-l, with gyroidal channels containing surfactant molecules, separated by amorphous walls that lie on the gyroid (G) minimal surface as in the mesoporous silica MCM-48. Although Ge is a high-meltin covalent semiconductor that is difficult to prepare from solution polymerization, we succeeded in assembling a continuous Ge network using a suitable precursor for Ge{sup 4-} atoms. Our results indicate that elemental semiconductors from group 14 of the periodic table can be made to adopt meso structured forms such as MSU-Ge-1, which features two three-dimensional labyrinthine tunnels obeying la3d space group symmetry and separated by a continuous germanium minimal surface that is otherwise amorphous. A consequence of this new structure for germanium, which has walls only one nanometre thick, is a wider electronic energy bandgap (1.4 eV versus 0.66 eV) than has crystalline or amorphous Ge. Controlled oxidation of MSU-Ge-1 creates a range of germanium suboxides with continuously varying Ge:O ratio and a smoothly increasing energy gap. (author)

Fundamental Limit of Nanophotonic Light-trapping in Solar Cells

OpenAIRE

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui

2010-01-01

Establishing the fundamental limit of nanophotonic light-trapping schemes is of paramount importance and is becoming increasingly urgent for current solar cell research. The standard theory of light trapping demonstrated that absorption enhancement in a medium cannot exceed a factor of 4n^2/ sin^2(\\theta), where n is the refractive index of the active layer, and \\theta is the angle of the emission cone in the medium surrounding the cell. This theory, however, is not applicable in the nanophot...

Optical security based on near-field processes at the nanoscale

International Nuclear Information System (INIS)

Naruse, Makoto; Tate, Naoya; Ohtsu, Motoichi

2012-01-01

Optics has been playing crucial roles in security applications ranging from authentication and watermarks to anti-counterfeiting. However, since the fundamental physical principle involves optical far-fields, or propagating light, diffraction of light causes severe difficulties, for example in device scaling and system integration. Moreover, conventional security technologies in use today have been facing increasingly stringent demands to safeguard against threats such as counterfeiting of holograms, requiring innovative physical principles and technologies to overcome their limitations. Nanophotonics, which utilizes interactions between light and matter at the nanometer scale via optical near-field interactions, can break through the diffraction limit of conventional propagating light. Moreover, nanophotonics has some unique physical attributes, such as localized optical energy transfer and the hierarchical nature of optical near-field interactions, which pave the way for novel security functionalities. This paper reviews the physical principles and describes some experimental demonstrations of systems based on nanophotonics with respect to security applications such as tamper resistance against non-invasive and invasive attacks, hierarchical information retrieval, hierarchical holograms, authentication, and traceability. (paper)

Radiation-electromagnetic effect in germanium single crystals

International Nuclear Information System (INIS)

Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

1980-01-01

An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with α particles, protons, or x rays in magnetic fields up to 8 kOe. The source of α particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10 11 particles .cm -2 .sec -1 ). In the energy range 4--40 MeV the emf was practically independent of the α-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the α-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with α particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect

Forster resonance energy transfer rate in any dielectric nanophotonic medium with weak dispersion

DEFF Research Database (Denmark)

Wubs, Martijn; Vos, Willem L.

2016-01-01

frequency dependent in nanophotonic media. Therefore, the position-dependent FRET rate and the LDOS at the donor transition frequency are completely uncorrelated for any nondispersive medium. Secondly, we derive an exact expression for the FRET rate as a frequency integral of the imaginary part of the Green...

Effects of electronically neutral impurities on muonium in germanium

International Nuclear Information System (INIS)

Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S.; Brewer, J.H.

1983-04-01

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium

Analytical product study of germanium-containing medicine by different ICP-MS applications

NARCIS (Netherlands)

Krystek, Petra; Ritsema, Rob

2004-01-01

For several years organo-germanium containing medicine has been used for special treatments of e.g. cancer and AIDS. The active substances contain germanium as beta-carboxyethylgermanium sesquioxide ((GeCH2CH 2COO-H)2O3/"Ge-132"), spirogermanium, germanium-lactate-citrate or unspecified forms. For

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2013-11-06

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Long-wavelength germanium photodetectors by ion implantation

International Nuclear Information System (INIS)

Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

1990-11-01

Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Directory of Open Access Journals (Sweden)

Caldwell Joshua D.

2015-04-01

Full Text Available The excitation of surface-phonon-polariton (SPhP modes in polar dielectric crystals and the associated new developments in the field of SPhPs are reviewed. The emphasis of this work is on providing an understanding of the general phenomenon, including the origin of the Reststrahlen band, the role that optical phonons in polar dielectric lattices play in supporting sub-diffraction-limited modes and how the relatively long optical phonon lifetimes can lead to the low optical losses observed within these materials. Based on this overview, the achievements attained to date and the potential technological advantages of these materials are discussed for localized modes in nanostructures, propagating modes on surfaces and in waveguides and novel metamaterial designs, with the goal of realizing low-loss nanophotonics and metamaterials in the mid-infrared to terahertz spectral ranges.

A Bloch mode expansion approach for analyzing quasi-normal modes in open nanophotonic structures

DEFF Research Database (Denmark)

de Lasson, Jakob Rosenkrantz; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We present a new method for determining quasi-normal modes in open nanophotonic structures using a modal ex- pansion technique. The outgoing wave boundary condition of the quasi-normal modes is satisfied automatically without absorbing boundaries, representing a significant advantage compared...

Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

2014-03-17

We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

Active 2D materials for on-chip nanophotonics and quantum optics

Directory of Open Access Journals (Sweden)

Shiue Ren-Jye

2017-03-01

Full Text Available Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.

Optically reconfigurable metasurfaces and photonic devices based on phase change materials

Science.gov (United States)

Wang, Qian; Rogers, Edward T. F.; Gholipour, Behrad; Wang, Chih-Ming; Yuan, Guanghui; Teng, Jinghua; Zheludev, Nikolay I.

2016-01-01

Photonic components with adjustable parameters, such as variable-focal-length lenses or spectral filters, which can change functionality upon optical stimulation, could offer numerous useful applications. Tuning of such components is conventionally achieved by either micro- or nanomechanical actuation of their constituent parts, by stretching or by heating. Here, we report a novel approach for making reconfigurable optical components that are created with light in a non-volatile and reversible fashion. Such components are written, erased and rewritten as two-dimensional binary or greyscale patterns into a nanoscale film of phase-change material by inducing a refractive-index-changing phase transition with tailored trains of femtosecond pulses. We combine germanium-antimony-tellurium-based films with a diffraction-limited resolution optical writing process to demonstrate a variety of devices: visible-range reconfigurable bichromatic and multi-focus Fresnel zone plates, a super-oscillatory lens with subwavelength focus, a greyscale hologram, and a dielectric metamaterial with on-demand reflection and transmission resonances.

Doping of germanium telluride with bismuth tellurides

International Nuclear Information System (INIS)

Abrikosov, N.Kh.; Karpinskij, O.G.; Makalatiya, T.Sh.; Shelimova, L.E.

1981-01-01

Effect of germanium telluride doping with bismuth fellurides (Bi 2 Te 3 ; BiTe; Bi 2 Te) on phase transition temperature, lattice parameters and electrophysical properties of alloys is studied. It is shown that in alloys of GeTe-Bi 2 Te 3 (BiTe)(Bi 2 Te) cross sections solid solution of GeTe with Bi 2 Te 3 , characterized by deviation from stoichiometry, and germanium in the second phase the quantity of which increases during the transition from GeTe-Bi 2 Te 3 cross section to GeTe-Bi 2 Te are in equilibrium. Lower values of holes concentration and of electric conductivity and higher values of thermo e.m.f. coefficient in comparison with alloys of GeTe-Bi 2 Te 3 cross section with the same bismuth content are characterized for GeTe-Bi 2 Te cross section alloys. It is shown that in the range of GeTe-base solid solution the α→γ phase transformation which runs trough the two-phase region (α→γ) is observed with tellurium content increase. Extension of α-phase existence region widens with the bismuth content increase. Peculiarities of interatomic interaction in GeTe-base solid solutions with isovalent and heterovalent cation substitution are considered [ru

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

Science.gov (United States)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

International Nuclear Information System (INIS)

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-01-01

We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

Modeling of dislocation dynamics in germanium Czochralski growth

Science.gov (United States)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

2015-01-01

In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

Deterministic Aperiodic Structures for on-chip Nanophotonics and Nanoplasmonics Device Applications

Science.gov (United States)

2013-04-01

has been previously validated against semi-analytical multiple scattering methods. In our work, all nanoparticles were modeled by oblate spheroids ...transferred microchannel patterns and the PDMS mold was oxygen- plasma treated along with the colorimetric DANS sensor on SiO2 substrate to form an...optofluidic DANS device. The oxygen plasma process permanently bonded the device together and resulted in hydrophilic surfaces, which easily prime the

Development of segmented germanium detectors for neutrinoless double beta decay experiments

International Nuclear Information System (INIS)

Liu, Jing

2009-01-01

The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of 76 Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse shape

Development of segmented germanium detectors for neutrinoless double beta decay experiments

Energy Technology Data Exchange (ETDEWEB)

Liu, Jing

2009-06-09

The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

Science.gov (United States)

Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

2018-03-01

In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

Probing the dispersion properties of 1D nanophotonic waveguides with far-field Fourier optics

DEFF Research Database (Denmark)

Le Thomas, N.; Jágerská, J.; Houdré, R.

2008-01-01

We present an advanced Fourier space imaging technique to probe guided light in nanophotonic structures with an effective numerical aperture of 2.5. This superresolution technique allows us to successfully investigate the dispersive properties of 1D nanowaveguides such as photonic crystal W1...

Neutron Transmission of Germanium Poly- and Monocrystals

International Nuclear Information System (INIS)

Habib, N.

2009-01-01

The measured total neutron cross-sections of germanium poly- and mono-crystals were analyzed using an additive formula. The formula takes into account the germanium crystalline structure and its physical parameters. Computer programs have developed in order to provide the required analyses. The calculated values of the total cross-section of polycrystalline germanium in the neutron wavelength range from 0.001 up to 0.7 nm were fitted to the measured ones at ETRR-1. From the fitting the main constants of the additive formula were determined. The experimental data measured at ETRR-1 of the total cross-section of high quality Ge single crystal at 4400 K, room, and liquid nitrogen temperatures, in the wavelength range between 0.028 nm and 0.64 nm, were also compared with the calculated values using the formula having the same constants. An overall agreement is noticed between the formula fits and experimental data. A feasibility study is done for the use of germanium in poly-crystalline form, as cold neutron filter, and in mono-crystalline one as an efficient filter for thermal neutrons. The filtering efficiency of Ge single crystal is detailed in terms of its isotopic abundance, crystal thickness, mosaic spread, and temperature. It can be concluded that the 7.5 cm thick 76 Ge single crystal (0.10 FWHM mosaic spread) cooled at liquid nitrogen temperature is an efficient thermal neutron filter.

Nanophotonic lab-on-a-chip platforms including novel bimodal interferometers, microfluidics and grating couplers.

Science.gov (United States)

Duval, Daphné; González-Guerrero, Ana Belén; Dante, Stefania; Osmond, Johann; Monge, Rosa; Fernández, Luis J; Zinoviev, Kirill E; Domínguez, Carlos; Lechuga, Laura M

2012-05-08

One of the main limitations for achieving truly lab-on-a-chip (LOC) devices for point-of-care diagnosis is the incorporation of the "on-chip" detection. Indeed, most of the state-of-the-art LOC devices usually require complex read-out instrumentation, losing the main advantages of portability and simplicity. In this context, we present our last advances towards the achievement of a portable and label-free LOC platform with highly sensitive "on-chip" detection by using nanophotonic biosensors. Bimodal waveguide interferometers fabricated by standard silicon processes have been integrated with sub-micronic grating couplers for efficient light in-coupling, showing a phase resolution of 6.6 × 10(-4)× 2π rad and a limit of detection of 3.3 × 10(-7) refractive index unit (RIU) in bulk. A 3D network of SU-8 polymer microfluidics monolithically assembled at the wafer-level was included, ensuring perfect sealing and compact packaging. To overcome some of the drawbacks inherent to interferometric read-outs, a novel all-optical wavelength modulation system has been implemented, providing a linear response and a direct read-out of the phase variation. Sensitivity, specificity and reproducibility of the wavelength modulated BiMW sensor has been demonstrated through the label-free immunodetection of the human hormone hTSH at picomolar level using a reliable biofunctionalization process.

Status report on the International Germanium Experiment

International Nuclear Information System (INIS)

Brodzinski, R.L.; Hensley, W.K.; Miley, H.S.; Reeves, J.H.; Avignone, F.T.; Collar, J.I.; Guerard, C.K.; Courant, H.; Ruddick, K.; Kirpichnikov, I.V.; Starostin, A.S.; Osetrov, S.B.; Pomansky, A.A.; Smolnikov, A.A.; Vasiliev, S.I.

1992-06-01

Phase II detector fabrication for the International Germanium Experiment is awaiting resolution of technical details observed during Phase I. Measurements of fiducial volume, configuration of the tansistor-reset preamplifier stage, and sources of background are discussed. Cosmogenic 7 Be is measured in germanium. Radium contamination in electroformed copper reported. The 2ν double- beta decay half-life of 76 Ge measured with a Phase I detector is in reasonable agreement with previously reported values. No events are observed in the vicinity of the Oν double-beta decay energy

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Science.gov (United States)

Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

2018-04-01

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

Calibration of germanium detectors

International Nuclear Information System (INIS)

Debertin, K.

1983-01-01

The process of determining the energy-dependent detection probability with measurements using Ge (Li) and high-grade germanium detectors is described. The paper explains which standards are best for a given purpose and given requirements as to accuracy, and how to assess measuring geometry variations and summation corrections. (DG) [de

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2013-11-01

Full Text Available We report the crystallization of electrodeposited germanium (Ge thin films on n-silicon (Si (100 by rapid melting process. The electrodeposition was carried out in germanium (IV chloride: propylene glycol (GeCl4:C3H8O2 electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm−1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm−1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Deep learning with coherent nanophotonic circuits

Science.gov (United States)

Shen, Yichen; Harris, Nicholas C.; Skirlo, Scott; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Sun, Xin; Zhao, Shijie; Larochelle, Hugo; Englund, Dirk; Soljačić, Marin

2017-07-01

Artificial neural networks are computational network models inspired by signal processing in the brain. These models have dramatically improved performance for many machine-learning tasks, including speech and image recognition. However, today's computing hardware is inefficient at implementing neural networks, in large part because much of it was designed for von Neumann computing schemes. Significant effort has been made towards developing electronic architectures tuned to implement artificial neural networks that exhibit improved computational speed and accuracy. Here, we propose a new architecture for a fully optical neural network that, in principle, could offer an enhancement in computational speed and power efficiency over state-of-the-art electronics for conventional inference tasks. We experimentally demonstrate the essential part of the concept using a programmable nanophotonic processor featuring a cascaded array of 56 programmable Mach-Zehnder interferometers in a silicon photonic integrated circuit and show its utility for vowel recognition.

High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

Science.gov (United States)

Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

2015-06-01

Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically

Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

Directory of Open Access Journals (Sweden)

Saikiran eVadavalli

2014-10-01

Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

Reaction studies of hot silicon, germanium and carbon atoms

International Nuclear Information System (INIS)

Gaspar, P.P.

1990-01-01

The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms? This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs

A novel nano-photonics biosensor concept for rapid molecular diagnostics

Science.gov (United States)

Klunder, Dion J. W.; van Herpen, Maarten M. J. W.; Kolesnychenko, Aleksey; Hornix, Eefje; Kahya, Nicoletta; de Boer, Ruth; Stapert, Henk

2008-04-01

We present a novel nano-photonics biosensor concept that offers an ultra-high surface specificity and excellent suppression of background signals due to the sample fluid on top of the biosensor. In our contribution, we will briefly discuss the operation principle and fabrication of the biosensor, followed by a more detailed discussion on the experimentally determined performance parameters. Recent results on detection of fluorescently labeled molecules in a highly fluorescent background will be shown, and we will give an outlook on real-time detection of bio-molecules such as proteins and nucleic acids.

Geometrical optics, electrostatics, and nanophotonic resonances in absorbing nanowire arrays.

Science.gov (United States)

Anttu, Nicklas

2013-03-01

Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.

Large-Scale Nanophotonic Solar Selective Absorbers for High-Efficiency Solar Thermal Energy Conversion.

Science.gov (United States)

Li, Pengfei; Liu, Baoan; Ni, Yizhou; Liew, Kaiyang Kevin; Sze, Jeff; Chen, Shuo; Shen, Sheng

2015-08-19

An omnidirectional nanophotonic solar selective absorber is fabricated on a large scale using a template-stripping method. The nanopyramid nickel structure achieves an average absorptance of 95% at a wavelength range below 1.3 μm and a low emittance less than 10% at wavelength >2.5 μm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coexistence in even-even nuclei with emphasis on the germanium isotopes

International Nuclear Information System (INIS)

Carchidi, M.A.V.

1985-01-01

No simple model to date can explain in a self-consistent way the results of direct transfer data and BE2 electromagnetic rates in the germanium isotopes. The simplest models use a two-state interaction for describing the ground state and first excited O + state. In all cases, these models can account for some of the data, but they are in drastic conflict with other experimental measurements. In this thesis, it is shown that a two-state model can consistently account for two-neutron and alpha transfer O + 2 /g.s. cross-section ratio data in the germanium region (ie. zinc, germanium, and selenium), proton occupation number data in the ground states of the even stable zinc, germanium, and selenium isotopes, and BE2 transition rates in isotopes of germanium and zinc. In addition the author can account for most of the one-neutron and two-neutron transfer O + 2 /g.s. and (9/2 + 2 )/(9/2 + 1 ) cross-section ratio data in the odd-mass germanium isotopes. In this generalized two-state model (called Rerg1), the author makes as few assumptions as possible about the nature of the basis states; rather the author allows the experimental data to dictate the properties of the basis-state overlaps. In this sense, the author has learned much about the basis states and has a useful tool for constructing them. The author also shows that the Rerg1 model can quantitatively account for all two-neutron O + 2 /g.s. cross-section ratio data in all even-even nuclei from calcium to uranium

Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide.

Science.gov (United States)

Thyrrestrup, Henri; Kiršanskė, Gabija; Le Jeannic, Hanna; Pregnolato, Tommaso; Zhai, Liang; Raahauge, Laust; Midolo, Leonardo; Rotenberg, Nir; Javadi, Alisa; Schott, Rüdiger; Wieck, Andreas D; Ludwig, Arne; Löbl, Matthias C; Söllner, Immo; Warburton, Richard J; Lodahl, Peter

2018-03-14

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise are of importance, and the influence of photonic nanostructures on the broadening has not been clarified. We present near-lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of 66 ± 4%, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out; i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

Techniques to distinguish between electron and photon induced events using segmented germanium detectors

International Nuclear Information System (INIS)

Kroeninger, K.

2007-01-01

Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in 60 Co, 152 Eu and 228 Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

Techniques to distinguish between electron and photon induced events using segmented germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Kroeninger, K.

2007-06-05

Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

Science.gov (United States)

Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

1993-01-01

Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

Synthesis and evaluation of germanic organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

International Nuclear Information System (INIS)

Ballestero Martinez, Ernesto

2014-01-01

The interest in the development of materials that have applications in areas such as electronics or biomarkers has affected the synthesis of new compounds based on germanium. This element has two states of common oxidation, +4 and +2, of them, the +2 oxidation state is the least studied and more reactive. Additionally, compounds of germanium (II) have similarities to carbenes in terms Lewis'acid base chemistry. The preparation of compounds of germanium (II) with ligands β-diketiminates has made possible the stabilization of new chemical functionalities and, simultaneously, it has provided interesting thermal properties to develop new methods of preparation of materials with novel properties. The preparation of amides germanium (II) L'Ge (NHPh) [1, L'= {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 } - ], L'Ge (4-NHPy) [2], L'Ge (2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC (CMeN-2,6- i Pr 2 C 6 H 3 ) 2 ] - ] are presented, the chemical and structural composition was determined by using techniques such as nuclear magnetic resonance ( 1 H, 13 C), elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermogravimetric analysis (TGA). The TGA has demonstrated that 1-4 experience a thermal decomposition, therefore, these compounds could be considered as potential starting materials for the obtaining of germanium nitride (GeN x ). Certainly, the availability of coordinating nitrogen atoms in the chemical composition in 2-4 have been interesting given that it could act as ligands in reactions with transition metal complexes. Thus, relevant information to molecular level could be obtained for some reactions and interactions that have used similar link sites in surface chemistry, for example, the chemical functionalization of silicon and germanium substrate. Additionally, the synthesis and structural characterization of germanium chloride compound (II) L G eCl [5, L' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 - ] is reported

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

Science.gov (United States)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Science.gov (United States)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

γ-ray tracking in germanium: the backtracking method

International Nuclear Information System (INIS)

Marel, J. van der; Cederwall, B.

2002-01-01

In the framework of a European TMR network project the concept for a γ-ray tracking array is being developed for nuclear physics spectroscopy in the energy range of ∼10 keV up to several MeV. The tracking array will consist of a large number of position-sensitive germanium detectors in a spherical geometry around a target. Due to the high segmentation, a Compton scattered γ-ray will deposit energy in several different segments. A method has been developed to reconstruct the tracks of multiple coincident γ-rays and to find their initial energies. By starting from the final point the track can be reconstructed backwards to the origin with the help of the photoelectric and Compton cross-sections and the Compton scatter formula. Every reconstructed track is given a figure of merit, thus allowing suppression of wrongly reconstructed tracks and γ-rays that have scattered out of the detector system. This so-called backtracking method has been tested on simulated events in a shell-like geometry for germanium and in planar geometries for silicon, germanium and CdTe

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

Science.gov (United States)

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

Phase transformations in chalkogenides of germanium subgroup elements and in alloys on their base at high pressures

International Nuclear Information System (INIS)

Skums, V.F.; Skoropanov, A.S.; Vecher, A.A.

1990-01-01

An attempt was made to systematize and analyze the available data on behaviour of chalkogenides of germanium subgroup elements and their alloys at high pressures, as applied to the problem of their use as reference materials for pressure determination. It is shown that phase transformations, accompanied by sharp change of electric resistance, are observed in chalkogenides of cubic and rhombohedral structures (lead, tin (SnTe) and germanium (GeTe)) under the effect of high pressures. It was established that electric resistance in the region of phase transformation (electric signal) depended on the type and concentration of current carriers: electric sigual grew with decrease of current carrier concentration; substances with p-type of conductivity were characterized by lower electric signal, as compared to substances with n-conductivety

Germanium geochemistry and mineralogy

Science.gov (United States)

Bernstein, L.R.

1985-01-01

Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

DEFF Research Database (Denmark)

Keplinger, Mario; Grifone, Raphael; Greil, Johannes

2016-01-01

Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different ill...

Advanced characterization of carrier profiles in germanium using micro-machined contact probes

DEFF Research Database (Denmark)

Clarysse, T.; Konttinen, M.; Parmentier, B.

2012-01-01

of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering...... the properties of both approaches on Al+ implants in germanium with different anneal treatments....

Micro-/nanoscale multi-field coupling in nonlinear photonic devices

Science.gov (United States)

Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

2017-08-01

The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

Injection and waveguiding properties in SU8 nanotubes for sub-wavelength regime propagation and nanophotonics integration

Science.gov (United States)

Bigeon, John; Huby, Nolwenn; Duvail, Jean-Luc; Bêche, Bruno

2014-04-01

We report photonic concepts related to injection and sub-wavelength propagation in nanotubes, an unusual but promising geometry for highly integrated photonic devices. Theoretical simulation by the finite domain time-dependent (FDTD) method was first used to determine the features of the direct light injection and sub-wavelength propagation regime within nanotubes. Then, the injection into nanotubes of SU8, a photoresist used for integrated photonics, was successfully achieved by using polymer microlensed fibers with a sub-micronic radius of curvature, as theoretically expected from FDTD simulations. The propagation losses in a single SU8 nanotube were determined by using a comprehensive set-up and a protocol for optical characterization. The attenuation coefficient has been evaluated at 1.25 dB mm-1 by a cut-back method transposed to such nanostructures. The mechanisms responsible for losses in nanotubes were identified with FDTD theoretical support. Both injection and cut-back methods developed here are compatible with any sub-micronic structures. This work on SU8 nanotubes suggests broader perspectives for future nanophotonics.

Few-photon Non-linearities in Nanophotonic Devices for Quantum Information Technology

DEFF Research Database (Denmark)

Nysteen, Anders

In this thesis we investigate few-photon non-linearities in all-optical, on-chip circuits, and we discuss their possible applications in devices of interest for quantum information technology, such as conditional two-photon gates and single-photon sources. In order to propose efficient devices...... the scattered photons. Even though the non-linearity also alters the pulse spectrum due to a four-wave mixing process, we demonstrate that input pulses with a Gaussian spectrum can be mapped to the output with up to 80 % fidelity. Using two identical two-level emitters, we propose a setup for a deterministic...... by the capturing process. Semiconductor quantum dots (QDs) are promising for realizing few-photon non-linearities in solid-state implementations, although coupling to phonon modes in the surrounding lattice have significant influence on the dynamics. By accounting for the commonly neglected asymmetry between...

Calibration of germanium detectors

International Nuclear Information System (INIS)

Bjurman, B.; Erlandsson, B.

1985-01-01

This paper describes problems concerning the calibration of germanium detectors for the measurement of gamma-radiation from environmental samples. It also contains a brief description of some ways of reducing the uncertainties concerning the activity determination. These uncertainties have many sources, such as counting statistics, full energy peak efficiency determination, density correction and radionuclide specific-coincidence effects, when environmental samples are investigated at close source-to-detector distances

Scalable Fabrication of Integrated Nanophotonic Circuits on Arrays of Thin Single Crystal Diamond Membrane Windows.

Science.gov (United States)

Piracha, Afaq H; Rath, Patrik; Ganesan, Kumaravelu; Kühn, Stefan; Pernice, Wolfram H P; Prawer, Steven

2016-05-11

Diamond has emerged as a promising platform for nanophotonic, optical, and quantum technologies. High-quality, single crystalline substrates of acceptable size are a prerequisite to meet the demanding requirements on low-level impurities and low absorption loss when targeting large photonic circuits. Here, we describe a scalable fabrication method for single crystal diamond membrane windows that achieves three major goals with one fabrication method: providing high quality diamond, as confirmed by Raman spectroscopy; achieving homogeneously thin membranes, enabled by ion implantation; and providing compatibility with established planar fabrication via lithography and vertical etching. On such suspended diamond membranes we demonstrate a suite of photonic components as building blocks for nanophotonic circuits. Monolithic grating couplers are used to efficiently couple light between photonic circuits and optical fibers. In waveguide coupled optical ring resonators, we find loaded quality factors up to 66 000 at a wavelength of 1560 nm, corresponding to propagation loss below 7.2 dB/cm. Our approach holds promise for the scalable implementation of future diamond quantum photonic technologies and all-diamond photonic metrology tools.

Etching of germanium-tin using ammonia peroxide mixture

Energy Technology Data Exchange (ETDEWEB)

Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2015-12-28

The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

GRAN SASSO: Enriched germanium in action

Energy Technology Data Exchange (ETDEWEB)

Anon.

1991-12-15

Two large crystals of carefully enriched germanium, one weighing 1 kilogram and the other 2.9 kilograms, and worth many millions of dollars, are being carefully monitored in the Italian Gran Sasso Laboratory in the continuing search for neutrinoless double beta decay.

GRAN SASSO: Enriched germanium in action

International Nuclear Information System (INIS)

Anon.

1991-01-01

Two large crystals of carefully enriched germanium, one weighing 1 kilogram and the other 2.9 kilograms, and worth many millions of dollars, are being carefully monitored in the Italian Gran Sasso Laboratory in the continuing search for neutrinoless double beta decay

Ultraviolet-light-induced processes in germanium-doped silica

DEFF Research Database (Denmark)

Kristensen, Martin

2001-01-01

A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...... which are responsible for the observed refractive index changes. Activation energies [1.85 +/-0.15 eV and 1.91 +/-0.15 eV] and rates [(2.7 +/-1.9) x 10(13) Hz and(7.2 +/-4.5) x 10(13) Hz] are determined for thermal elimination of these states. Good agreement is found with experimental results and new UV...

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

International Nuclear Information System (INIS)

Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

2014-01-01

The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

Pulse shapes and surface effects in segmented germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Lenz, Daniel

2010-03-24

It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

Pulse shapes and surface effects in segmented germanium detectors

International Nuclear Information System (INIS)

Lenz, Daniel

2010-01-01

It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of 76 Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope 76 Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

Science.gov (United States)

Hasanah, L.; Suhendi, E.; Khairrurijal

2018-05-01

Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

DeviceNet-based device-level control in SSRF

CERN Document Server

Leng Yong Bin; Lu Cheng Meng; Miao Hai Feng; Liu Song Qiang; Shen Guo Bao

2002-01-01

The control system of Shanghai Synchrotron Radiation Facility is an EPICS-based distributed system. One of the key techniques to construct the system is the device-level control. The author describes the design and implementation of the DeviceNet-based device controller. A prototype of the device controller was tested in the experiments of magnet power supply and the result showed a precision of 3 x 10 sup - sup 5

A study on the forms of existence of germanium in uranium-bearing coals of Bangmai basin of Yunnan

International Nuclear Information System (INIS)

Zhang Shuling; Wang Shuying; Yin Jinshuang

1988-07-01

The Bangmai basin is an asymmetrical intermontane synclinal basin with a Hercynian-Yenshan granitic body (γ 3 3 -γ 5 2 ) as its basement. Its overlying strata are made up of the N 1 of coal-bearing clastic rocks of Neogene period. Germanium ore mostly occur within the N 1 2 coal-seam. Uranium, germanium-bearing coals are mainly lignites of low grade in coalation and belong to semidurain, semiclarain, duroclarain and clarodurain. In order to probe into the forms of existence of germanium in coal, six kinds of analytical methods (electronic probe analysis, separation of heavy liquid, grain-size analysis, electric osmosis, chemical extraction and grade-extraction) have been adopted. A simulated test of humic complex germanium in the laboratory was carried out. According to infrared spectral analysis, it is found that 1700 cm -1 wavecrest almost disappears, 1250 cm -1 peak weakens and 1600 cm -1 peak strengthens, 1400 cm -1 peak slightly strengthens. No doubt, these illustrate the formatiion of humic germanium complex. Afterward, through differential thermal analysis and measurement of pH variation of media, it futher proves the presence of humic germanium complex. It is considered that the forms of existence of germanium in uranium-bearing coals mainly are: (1) In close chemical combination with organic matter, usually in the form of humic germanium complex and germanium organic compound; (2) In the state of adsorption, germanium is adsorbed by some organic matter, clay minerals and limonite etc.; (3) A very rare part occurring as isomorphous form

Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

International Nuclear Information System (INIS)

Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

1996-01-01

The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

Study and characterization of porous germanium for radiometric measurements

Energy Technology Data Exchange (ETDEWEB)

Akkari, E.; Benachour, Z.; Touayar, O.; Benbrahim, J. [Activites de Recherche, Metrologie des Rayonnements, Institut National des Sciences Appliquees et de Technologie, INSAT, Tunis (Tunisia); Aouida, S.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes de l' Energie, LaNSE, Centre de Recherche et des Technologies de l' Energie, CRTEn, Hammam-Lif (Tunisia)

2009-07-15

The aim of this article is to study and realize a new detector based on a porous germanium (pGe) photodiode to be used as a standard for radiometric measurement in the wavelength region between 800 nm and 1700 nm. We present the development and characterization of a porous structure realized on a single-crystal substrate of p-type germanium (Ga doped) and of crystallographic orientation (100). The obtained structure allows, on the one hand, to trap the incident radiation, and on the other hand, to minimize the fluctuations of the front-face reflection coefficient of the photodiode. The first studies thus made show that it is possible to optimize, respectively, the electrical current density and the electrochemical operation time necessary for obtaining exploitable porous structures. The obtained results show that for 50 mA/cm{sup 2} and 5 min as operational parameters, we obtain a textured aspect of the porous samples that present a pyramidal form. The reflectivity study of the front surface shows a constant value of around 38% in a spectral range between 800 nm and 1700 nm approximately. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermodynamic calculations of self- and hetero-diffusion parameters in germanium

International Nuclear Information System (INIS)

Saltas, V.; Vallianatos, F.

2015-01-01

In the present work, the diffusion coefficients of n- and p-type dopants (P, As, Sb, Al) and self-diffusion in crystalline germanium are calculated from the bulk elastic properties of the host material based on the cBΩ thermodynamic model. The calculated diffusion coefficients as a function of temperature and the activation enthalpies prove to be in full agreement with the reported experimental results. Additional point defect parameters such as activation entropy, activation volume and activation Gibbs free energy are also calculated for each diffusing element. The pressure dependence of self-diffusion coefficients in germanium is also verified at high temperatures (876 K–1086 K), in agreement with reported results ranging from ambient pressure up to 600 MPa and is further calculated at pressures up to 3 GPa, where the phase transition to Ge II occurs. - Highlights: • Calculation of diffusivities of n- and p-type dopants in Ge from elastic properties. • Calculation of point defect parameters according to the cBΩ thermodynamic model. • Prediction of the pressure dependence of self-diffusion coefficients in Ge

Degradation of SiGe devices by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Ohyama, Hidenori; Hayama, Kiyoteru [Kumamoto National Coll. of Technology, Nishigoshi (Japan); Vanhellemont, J; Takami, Yasukiyo; Sunaga, Hiromi; Nashiyama, Isamu; Uwatoko, Yoshiya; Poortmans, J; Caymax, M

1997-03-01

The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)

Organotrichlorogermane synthesis by the reaction of elemental germanium, tetrachlorogermane and organic chloride via dichlorogermylene intermediate.

Science.gov (United States)

Okamoto, Masaki; Asano, Takuya; Suzuki, Eiichi

2004-08-07

Organotrichlorogermanes were synthesized by the reaction of elemental germanium, tetrachlorogermane and organic chlorides, methyl, propyl, isopropyl and allyl chlorides. Dichlorogermylene formed by the reaction of elemental germanium with tetrachlorogermane was the reaction intermediate, which was inserted into the carbon-chlorine bond of the organic chloride to give organotrichlorogermane. When isopropyl or allyl chloride was used as an organic chloride, organotrichlorogermane was formed also in the absence of tetrachlorogermane. These chlorides were converted to hydrogen chloride, which subsequently reacted with elemental germanium to give the dichlorogermylene intermediate. The reaction of elemental germanium, tetrachlorogermane and organic chlorides provides a simple and easy method for synthesizing organotrichlorogermanes, and all the raw materials are easily available.

HEROICA: A fast screening facility for the characterization of germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Andreotti, Erica [Universität Tübingen, Auf der Morgenstelle 14, 72076 Tübingen (Germany); Collaboration: GERDA Collaboration

2013-08-08

In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor

International Nuclear Information System (INIS)

Padilla, J. L.; Alper, C.; Ionescu, A. M.; Gámiz, F.

2014-01-01

The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

2014-08-25

The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

Harmonic Lattice Dynamics of Germanium

Energy Technology Data Exchange (ETDEWEB)

Nelin, G

1974-07-01

The phonon dispersion relations of the DELTA-, LAMBDA-, and SIGMA-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field.

Harmonic Lattice Dynamics of Germanium

International Nuclear Information System (INIS)

Nelin, G.

1974-01-01

The phonon dispersion relations of the Δ-, Λ-, and Σ-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field

Protein patterning on polycrystalline silicon-germanium via standard UV lithography for bioMEMS applications

Energy Technology Data Exchange (ETDEWEB)

Lenci, S., E-mail: silvia.lenci@gmail.com [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); imec, Kapeldreef 75, Leuven B-3001 (Belgium); Tedeschi, L.; Domenici, C.; Lande, C. [Istituto di Fisiologia Clinica, CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Nannini, A.; Pennelli, G.; Pieri, F. [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); Severi, S. [imec, Kapeldreef 75, Leuven B-3001 (Belgium)

2010-10-12

Polycrystalline silicon-germanium (poly-SiGe) is a promising structural material for the post-processing of micro electro-mechanical systems (MEMS) on top of complementary metal-oxide-semiconductor (CMOS) substrates. Combining MEMS and CMOS allows for the development of high-performance devices. We present for the first time selective protein immobilization on top of poly-SiGe surfaces, an enabling technique for the development of novel poly-SiGe based MEMS biosensors. Active regions made of 3-aminopropyl-triethoxysilane (APTES) were defined using silane deposition onto photoresist patterns followed by lift-off in organic solvents. Subsequently, proteins were covalently bound on the created APTES patterns. Fluorescein-labeled human serum albumin (HSA) was used to verify the immobilization procedure while the binding capability of the protein layer was tested by an antigen-labeled antibody pair. Inspection by fluorescence microscopy showed protein immobilization inside the desired bioactive areas and low non-specific adsorption outside the APTES pattern. Furthermore, the quality of the silane patches was investigated by treatment with 30 nm-diameter gold nanoparticles and scanning electron microscope observation. The developed technique is therefore a promising first step towards the realization of poly-SiGe based biosensors.

Nonlinear optics in germanium mid-infrared fiber material: Detuning oscillations in femtosecond mid-infrared spectroscopy

Directory of Open Access Journals (Sweden)

M. Ordu

2017-09-01

Full Text Available Germanium optical fibers hold great promise in extending semiconductor photonics into the fundamentally important mid-infrared region of the electromagnetic spectrum. The demonstration of nonlinear response in fabricated Ge fiber samples is a key step in the development of mid-infrared fiber materials. Here we report the observation of detuning oscillations in a germanium fiber in the mid-infrared region using femtosecond dispersed pump-probe spectroscopy. Detuning oscillations are observed in the frequency-resolved response when mid-infrared pump and probe pulses are overlapped in a fiber segment. The oscillations arise from the nonlinear frequency resolved nonlinear (χ(3 response in the germanium semiconductor. Our work represents the first observation of coherent oscillations in the emerging field of germanium mid-infrared fiber optics.

Characterisation of two AGATA asymmetric high purity germanium capsules

International Nuclear Information System (INIS)

Colosimo, S.J.; Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S.; Lazarus, I.H.; Nolan, P.J.; Simpson, J.; Unsworth, C.

2015-01-01

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array

Quantitative spectrographic determination of traces of germanium in lignite

International Nuclear Information System (INIS)

Martin, M.; Roca, M.

1972-01-01

A burning technique in a d.c. arc at 10 amp has been employed. The standards have been prepared from a natural lignite with a low germanium content. In order to enhance sensitivity, AgCl, K 2 SO 4 , CuF 2 , Sb 2 S 3 and Bi 2 S 3 have been tested as sweeping materials. Using 2% CuF 2 a detection limit of 1 ppm germanium is attainable. Bi, Cu, Sb and Sn have been studied as internal standards: the former leads to the, highest precision (1 6%. Results show good agreement with those obtained by the addition method. (Author) 6 refs

Characterisation of two AGATA asymmetric high purity germanium capsules

Energy Technology Data Exchange (ETDEWEB)

Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

2015-02-11

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

Porous germanium multilayers

Energy Technology Data Exchange (ETDEWEB)

Garralaga Rojas, Enrique; Hensen, Jan; Brendel, Rolf [Institut fuer Solarenergieforschung Hameln (ISFH), Emmerthal (Germany); Carstensen, Juergen; Foell, Helmut [Chair for General Materials Science, Faculty of Engineering, Christian-Albrechts-University of Kiel (Germany)

2011-06-15

We present the reproducible fabrication of porous germanium (PGe) single- and multilayers. Mesoporous layers form on heavily doped 4'' p-type Ge wafers by electrochemical etching in highly concentrated HF-based electrolytes with concentrations in a range of 30-50 wt.%. Direct PGe formation is accompanied by a constant dissolution of the already-formed porous layer at the electrolyte/PGe interface, hence yielding a thinner substrate after etching. This effect inhibits multilayer formation as the starting layer is etched while forming the second layer. We avoid dissolution of the porous layer by alternating the etching bias from anodic to cathodic. PGe formation occurs during anodic etching whereas the cathodic step passivates pore walls with H-atoms and avoids electropolishing. The passivation lasts a limited time depending on the etching current density and electrolyte concentration, necessitating a repetition of the cathodic step at suitable intervals. With optimized alternating bias mesoporous multilayer production is possible. We control the porosity of each single layer by varying the etching current density and the electrolyte (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Attenuation, dispersion and nonlinearity effects in graphene-based waveguides

Directory of Open Access Journals (Sweden)

Almir Wirth Lima Jr.

2015-05-01

Full Text Available We simulated and analyzed in detail the behavior of ultrashort optical pulses, which are typically used in telecommunications, propagating through graphene-based nanoribbon waveguides. In this work, we showed the changes that occur in the Gaussian and hyperbolic secant input pulses due to the attenuation, high-order dispersive effects and nonlinear effects. We concluded that it is possible to control the shape of the output pulses with the value of the input signal power and the chemical potential of the graphene nanoribbon. We believe that the obtained results will be highly relevant since they can be applied to other nanophotonic devices, for example, filters, modulators, antennas, switches and other devices.

The electrical properties of a strongly disordered system based on lightly doped germanium compensated by disordered regions

International Nuclear Information System (INIS)

Evseev, V.A.; Konopleva, R.F.; Yuferev, A.A.

1976-01-01

A study was made of lightly doped (Nsub(Sb) approximately 10 15 cm -3 ) n-Ge, heavily compensated (K = Nsub(A)/N sub(D) approximately 1) by fast neutrons from a reactor. Irradiation is shown to produce, near n-p conversion (annealing has the same effect near p-n conversion), a random relief of electrostatic potential which is caused by the overlap of the space-charge regions surrounding disordered regions (DR). the random potential field results in a spatial 'bending' of the whole band spectrum of germanium, similar to the way it is observed in amorphous semiconductors because of their disorder. Experiments show the conduction in the DR overlap region to be of an activated nature, associated with the ejection of carriers to the corresponding 'percolation' levels. The activation energy of such conduction varies with the degree of compensation. The shift of the Fermi level depends on the degree of compensation here in a much more sensitive way than in the case of compensation by chemical impurities. The properties of Ge obtained by DR overlap and by compensation with chemical impurities are compared. A superlinear I-V characteristic producing the switching effect is observed in strong electric fields (E approximately 10 3 V cm -1 ). A suggestion is made that a study of disordered systems, based on lightly doped germanium which is compensated with DRs produced by high-energy particles, should both help to obtain new information on the parameters of the DRs proper and help to simulate the properties of the amorphous semiconductors. (author)

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

Science.gov (United States)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

High resolution gamma-ray spectroscopy at high count rates with a prototype High Purity Germanium detector

Science.gov (United States)

Cooper, R. J.; Amman, M.; Vetter, K.

2018-04-01

High-resolution gamma-ray spectrometers are required for applications in nuclear safeguards, emergency response, and fundamental nuclear physics. To overcome one of the shortcomings of conventional High Purity Germanium (HPGe) detectors, we have developed a prototype device capable of achieving high event throughput and high energy resolution at very high count rates. This device, the design of which we have previously reported on, features a planar HPGe crystal with a reduced-capacitance strip electrode geometry. This design is intended to provide good energy resolution at the short shaping or digital filter times that are required for high rate operation and which are enabled by the fast charge collection afforded by the planar geometry crystal. In this work, we report on the initial performance of the system at count rates up to and including two million counts per second.

Invited Article: Acousto-optic finite-difference frequency-domain algorithm for first-principles simulations of on-chip acousto-optic devices

Directory of Open Access Journals (Sweden)

Yu Shi

2017-02-01

Full Text Available We introduce a finite-difference frequency-domain algorithm for coupled acousto-optic simulations. First-principles acousto-optic simulation in time domain has been challenging due to the fact that the acoustic and optical frequencies differ by many orders of magnitude. We bypass this difficulty by formulating the interactions between the optical and acoustic waves rigorously as a system of coupled nonlinear equations in frequency domain. This approach is particularly suited for on-chip devices that are based on a variety of acousto-optic interactions such as the stimulated Brillouin scattering. We validate our algorithm by simulating a stimulated Brillouin scattering process in a suspended waveguide structure and find excellent agreement with coupled-mode theory. We further provide an example of a simulation for a compact on-chip resonator device that greatly enhances the effect of stimulated Brillouin scattering. Our algorithm should facilitate the design of nanophotonic on-chip devices for the harnessing of photon-phonon interactions.

Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

International Nuclear Information System (INIS)

Colleoni, Davide; Pasquarello, Alfredo

2016-01-01

The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively. (paper)

Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

Science.gov (United States)

Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

2017-12-01

Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

Dazai super-large uranium-bearing germanium deposit in western Yunnan region metallogenic geological conditions and prospect

International Nuclear Information System (INIS)

Han Yanrong; Yuan Qingbang; Li Yonghua; Zhang Ling; Dai Jiemin

1995-05-01

The Dazai super-large uranium-bearing germanium deposit is located in Bangmai Fault Basin, Western Yunnan, China. The basin basement is migmatitic granite and the cover is miocene coal-bearing clastics, Bangmai Formation. The basin development had undergone faulted rhombus basin forming, synsedimentary structure-developing and up-lifted-denuded stages. Synsedimentary faults had controlled distribution of sedimentary formation and lithofacies, and uranium and germanium mineralization. Germanium ore-bodies occur mainly in master lignite-bed of lower rhythmite. Hosted germanium-lignite is taken as main ore-type. Germanium occurs in vitrinite of lignite in the form of metal-organic complex. The metallogenetic geological conditions of the deposit are that ground preparation is uplift zone-migmatitic granite-fault basin-geothermal anomaly area, rich and thick ore-body is controlled by synsedimentary fault, peat-bog phase is favorable to accumulation for ore-forming elements, and unconformity between overlying cover and underlying basement is a channel-way of mineralizing fluid. A multiperiodic composite, being regarded sedimentation and diagenesis as a major process, uranium and germanium ore deposit has been formed through two mineralization. Four prospecting areas have been forecasted and two deposits have been accordingly discovered again. Technical-economic provableness shows that the deposit is characterized by shallow-buried, rich grade, large scale, easy mining and smelting. (9 figs.)

High-purity germanium crystal growing

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1982-10-01

The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10 10 cm - 3 and be essentially free of charge trapping defects. Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions. The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers

Performance of a 6x6 segmented germanium detector for {gamma}-ray tracking

Energy Technology Data Exchange (ETDEWEB)

Valiente-Dobon, J.J. E-mail: j.valiente-dobon@surrey.ac.uk; Pearson, C.J.; Regan, P.H.; Sellin, P.J.; Gelletly, W.; Morton, E.; Boston, A.; Descovich, M.; Nolan, P.J.; Simpson, J.; Lazarus, I.; Warner, D

2003-06-01

A 36 fold segmented germanium coaxial detector has been supplied by EURISYS MESURES. The outer contact is segmented both radially and longitudinally. The signals from the fast preamplifiers have been digitised by 12 bit, 40 MHz ADCs. In this article we report preliminary results obtained using this detector and their relevance for future germanium {gamma}-ray tracking arrays.

Study of the possibility of growing germanium single crystals under low temperature gradients

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.; Zhdankov, V. N.

2014-03-01

The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100-200 cm-2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.

Germanium-doped gallium phosphide obtained by neutron irradiation

Science.gov (United States)

Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

1993-08-01

Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

Broadband nanophotonic wireless links and networks using on-chip integrated plasmonic antennas.

Science.gov (United States)

Yang, Yuanqing; Li, Qiang; Qiu, Min

2016-01-19

Owing to their high capacity and flexibility, broadband wireless communications have been widely employed in radio and microwave regimes, playing indispensable roles in our daily life. Their optical analogs, however, have not been demonstrated at the nanoscale. In this paper, by exploiting plasmonic nanoantennas, we demonstrate the complete design of broadband wireless links and networks in the realm of nanophotonics. With a 100-fold enhancement in power transfer superior to previous designs as well as an ultrawide bandwidth that covers the entire telecommunication wavelength range, such broadband nanolinks and networks are expected to pave the way for future optical integrated nanocircuits.

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

Science.gov (United States)

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

In vitro binding of germanium to proteins of rice shoots

International Nuclear Information System (INIS)

Matsumoto, Hideaki; Takahashi, Eiichi

1976-01-01

The possibility of in vitro binding between proteins of rice shoots and germanium (Ge) was investigated. The proteins in mixtures of aqueous extracts of rice shoots and radioactive germanium ( 68 GeO 2 ) were fractionated. The binding of radioactivity to the proteins was observed even after 5 successive fractionation steps from the original mixtures. At the final fractionation step using polyacrylamide gel electrophoresis, a constant proportionality between protein concentration and associated radioactivity was found in most samples although not all. These results indicate that the binding of 68 Ge to proteins is not due to the simple adsorption by proteins. (auth.)

Program LEPS to addition of gamma spectra from germanium detectors

International Nuclear Information System (INIS)

Romero, L.

1986-01-01

The LEP program, written in FORTRAN IV, performs the addition of two spectra, collected with different detectors, from the same sample. This application, adds the two gamma spectra obtained from two opposite LEPS Germanium Detectors (Low Energy Photon Spectrometer), correcting the differences (channel/energy) between both two spectra, and fitting them before adding. The total-spectrum is recorded at the computer memory as a single spectrum. The necessary equipment, to run this program is: - Two opposite germanium detectors, with their associate electronics. - Multichannel analyzer (2048 memory channel minimum) - Computer on-line interfacing to multichannel analyzer. (Author) 4 refs

Characterization of nanocrystalline silicon germanium film and ...

African Journals Online (AJOL)

The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

Quantum dots for future nanophotonic devices : lateral ordering, position, and number control

NARCIS (Netherlands)

Nötzel, R.

2010-01-01

After the general aspects of InAs/InP (100) quantum dots (QDs) regarding the formation of QDs versus quantum dashes, wavelength tuning from telecom to mid-infrared region, and device applications, we discuss our recent progress on the lateral ordering, position, and number control of QDs.

Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

Science.gov (United States)

Balram, Krishna C; Audet, Ross M; Miller, David A B

2013-04-22

We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

Energy Technology Data Exchange (ETDEWEB)

Martineau, F; Namur, K; Mallet, J; Delavoie, F; Troyon, M; Molinari, M [Laboratoire de Microscopies et d' Etude de Nanostructures (LMEN EA3799), Universite de Reims Champagne Ardennes (URCA), Reims Cedex 2 (France); Endres, F, E-mail: michael.molinari@univ-reims.fr [Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, D-36678 Clausthal-Zellerfeld (Germany)

2009-11-15

The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P{sub 1,4}) containing SiCl{sub 4} as Si source or GeCl{sub 4} as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

Germanium films by polymer-assisted deposition

Science.gov (United States)

Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

2013-01-15

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

Quantum Optics and Nanophotonics : Lecture Notes of the Les Houches Summer School : Session CI

CERN Document Server

Sandoghdar, Vahid; Treps, Nicolas; Cugliandolo, Leticia F

2017-01-01

Quantum Optics and Nanophotonics consists of the lecture notes of the Les Houches Summer School 101 held in August 2013. Some of the most eminent experts in this flourishing area of research have contributed chapters lying at the intersection of basic quantum science and advanced nanotechnology. The book is part of the renowned series of tutorial books that contain the lecture notes of all the Les Houches Summer Schools since the 1950's and cover the latest developments in physics and related fields.

Mechanically-cooled germanium detector using two stirling refrigerators

International Nuclear Information System (INIS)

Katagiri, Masaki; Kobayashi, Yoshii; Takahashi, Koji

1996-01-01

In this paper, we present a developed mechanically-cooled germanium gamma-ray detector using Stirling refrigerators. Two Stirling refrigerators having cooling faculty of 1.5W at 80K were used to cool down a germanium detector element to 77K instead of a dewar containing liquid nitrogen. An 145cm 3 (56.0mmf x 59.1 mml) closed-end Ge(I) detector having relative detection efficiency of 29.4% was attached at the refrigerators. The size of the detector was 60cml x 15cmh x 15cmw. The lowest cooling temperature, 70K was obtained after 8 hours operation. The energy resolutions for 1.33MeV gamma-rays and for pulser signals were 2.43keV and 1.84keV at an amplifier shaping time of 2μsec, respectively

Nature of oxygen donors and radiation defects in oxygen-doped germanium

International Nuclear Information System (INIS)

Fukuoka, Noboru; Atobe, Kozo; Honda, Makoto; Matsuda, Koji.

1991-01-01

The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its annealing stage at 60degC-140degC. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples. (author)

Buried melting in germanium implanted silicon by millisecond flash lamp annealing

International Nuclear Information System (INIS)

Voelskow, Matthias; Yankov, Rossen; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

2008-01-01

Flash lamp annealing in the millisecond range has been used to induce buried melting in silicon. For this purpose high dose high-energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp treatment at high energy densities leads to local melting of the germanium rich layer. The thickness of the molten layer has been found to depend on the irradiation energy density. During the cool-down period, epitaxial crystallization takes place resulting in a largely defect-free layer

Long-term radiation damage to a spaceborne germanium spectrometer

CERN Document Server

Kurczynski, P; Hull, E L; Palmer, D; Harris, M J; Seifert, H; Teegarden, B J; Gehrels, N; Cline, T L; Ramaty, R; Sheppard, D; Madden, N W; Luke, P N; Cork, C P; Landis, D A; Malone, D F; Hurley, K

1999-01-01

The Transient Gamma-Ray Spectrometer aboard the Wind spacecraft in deep space has observed gamma-ray bursts and solar events for four years. The germanium detector in the instrument has gradually deteriorated from exposure to the approx 10 sup 8 p/cm sup 2 /yr(>100 MeV) cosmic-ray flux. Low-energy tailing and loss of efficiency, attributed to hole trapping and conversion of the germanium from n- to p-type as a result of crystal damage, were observed. Raising the detector bias voltage ameliorated both difficulties and restored the spectrometer to working operation. Together, these observations extend our understanding of the effects of radiation damage to include the previously unsuccessfully studied regime of long-term operation in space. (author)

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

Science.gov (United States)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Ion beam induced stress formation and relaxation in germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2013-07-15

Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

Nanorods of Silicon and Germanium with Well-Defined Shapes and Sizes

Energy Technology Data Exchange (ETDEWEB)

Slavi C. Sevov

2012-05-03

We have made number of important discoveries along the major goals of the project, namely i) electrodeposition of germanium thin films from clusters, ii) synthesis of cluster-based surfactants with long hydrocarbon chains and micelles made of them, iii) grafting of Ge{sub 9}-clusters onto self assembled films of siloxanes attached to glass substrates, iv) doping of Ge{sub 9}-clusters, and v) expanding the clusters to ten-atom cages of Ge{sub 10}{sup 2-}.

The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

Energy Technology Data Exchange (ETDEWEB)

Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

2012-09-28

The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

International Nuclear Information System (INIS)

Yu, Zhu; Xue-Jun, Xu; Zhi-Yong, Li; Liang, Zhou; Yu-De, Yu; Jin-Zhong, Yu; Wei-Hua, Han; Zhong-Chao, Fan

2010-01-01

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46% and 25% at a wavelength of 1.55 μm are achieved by simulation and experiment, respectively. An optical 3 dB bandwidth of 45 nm from 1530 nm to 1575 nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10 nm in etch depth is achievable. The measurement results indicate that the alignment error of ±2 μm results in less than 1 dB additional coupling loss. (classical areas of phenomenology)

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

Science.gov (United States)

Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

2017-12-01

Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

Formation of various types of nanostructures on germanium surface by nanosecond laser pulses

Science.gov (United States)

Mikolutskiy, S. I.; Khasaya, R. R.; Khomich, Yu V.; Yamshchikov, V. A.

2018-03-01

The paper describes the formation of micro- and nanostructures in different parts of irradiation zone on germanium surface by multiple action of nanosecond pulses of ArF-laser. It proposes a simple method using only one laser beam without any optional devices and masks for surface treatment. Hexa- and pentagonal cells with submicron dimensions along the surface were observed in peripheral zone of irradiation spot by atomic-force microscopy. Nanostructures in the form of bulbs with rounded peaks with lateral sizes of 40-120 nm were obtained in peripheral low-intensity region of the laser spot. Considering experimental data on material processing by nanosecond laser pulses, a classification of five main types of surface reliefs formed by nanosecond laser pulses with energy density near or slightly above ablation threshold was proposed.

Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

Directory of Open Access Journals (Sweden)

Dibowski Henrik

2011-01-01

Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

Directory of Open Access Journals (Sweden)

Cosimo Lacava

2017-01-01

Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

Event timing in high purity germanium coaxial detectors

International Nuclear Information System (INIS)

El-Ibiary, M.Y.

1979-08-01

The timing of gamma ray radiation in systems using high purity coaxial germanium detectors is analyzed and compared to that of systems using Ge(Li) detectors. The analysis takes into account the effect of the residual impurities on the electric field distribution, and hence on the rate of rise of the electrical pulses delivered to the timing module. Conditions under which the electric field distribution could lead to an improvement in timing performance, are identified. The results of the analysis confirm the experimental results published elsewhere and when compared with those for Ge(Li) detectors, which usually operate under conditions of charge carrier velocity saturation, confirm that high purity germanium detectors need not have inferior timing characteristics. A chart is given to provide a quantitative basis on which the trade off between the radius of the detector and its time resolution may be made

Resonant halide perovskite nanoparticles

Science.gov (United States)

Tiguntseva, Ekaterina Y.; Ishteev, Arthur R.; Komissarenko, Filipp E.; Zuev, Dmitry A.; Ushakova, Elena V.; Milichko, Valentin A.; Nesterov-Mueller, Alexander; Makarov, Sergey V.; Zakhidov, Anvar A.

2017-09-01

The hybrid halide perovskites is a prospective material for fabrication of cost-effective optical devices. Unique perovskites properties are used for solar cells and different photonic applications. Recently, perovskite-based nanophotonics has emerged. Here, we consider perovskite like a high-refractive index dielectric material, which can be considered to be a basis for nanoparticles fabrication with Mie resonances. As a result, we fabricate and study resonant perovskite nanoparticles with different sizes. We reveal, that spherical nanoparticles show enhanced photoluminescence signal. The achieved results lay a cornerstone in the field of novel types of organic-inorganic nanophotonics devices with optical properties improved by Mie resonances.

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

International Nuclear Information System (INIS)

Volynets, Oleksandr

2012-01-01

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

Energy Technology Data Exchange (ETDEWEB)

Volynets, Oleksandr

2012-07-27

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

Experience from operating germanium detectors in GERDA

Science.gov (United States)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

The GALATEA test facility and a first study of α-induced surface events in a germanium detector

Energy Technology Data Exchange (ETDEWEB)

Irlbeck, Sabine

2014-01-30

Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

The GALATEA test facility and a first study of α-induced surface events in a germanium detector

International Nuclear Information System (INIS)

Irlbeck, Sabine

2014-01-01

Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

Use of Germanium as comparator and integral monitor of neutron flux in activation analysis

International Nuclear Information System (INIS)

Furnari, Juan C.; Cohen, Isaac M.; Arribere, Maria A.; Kestelman, Abraham J.

1997-01-01

The possibility of using germanium as monitor of the thermal and epithermal components of the neutron flux, and comparator in parametric activation analysis, is discussed. The advantages and drawbacks associated to the use of this element are commented on, and the comparison with zirconium, in terms of the determination relative error, is performed. The utilisation of germanium as integral flux monitor, including the fast component of the neutron spectrum, is also discussed. Data corresponding to measurements of k 0 factor for the most relevant gamma transitions from Ge-75 and Be-77 are presented, as well as the results of the reference material analysis, employing germanium as flux monitor and comparator in a simultaneous way. (author). 8 refs., 3 figs., 2 tabs

Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

Science.gov (United States)

Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

2014-05-01

We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

The Structural Engineering Strategy for Photonic Material Research and Device Development

Directory of Open Access Journals (Sweden)

Yalin Lu

2007-01-01

Full Text Available A new structural engineering strategy is introduced for optimizing the fabrication of arrayed nanorod materials, optimizing superlattice structures for realizing a strong coupling, and directly developing nanophotonic devices. The strategy can be regarded as “combinatorial” because of the high efficiency in optimizing structures. In this article, this strategy was applied to grow ZnO nanorod arrays, and to develop a new multifunctional photodetector using such nanorod arrays, which is able to simultaneously detect power, energy, and polarization of an incident ultraviolet radiation. The strategy was also used to study the extraordinary dielectric behavior of relaxor ferroelectric lead titanate doped lead magnesium niobate heterophase superlattices in the terahertz frequencies, in order to investigate their dielectric polariton physics and the potential to be integrated with tunable surface resonant plasmonics devices.

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

Science.gov (United States)

Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

2009-08-15

In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

Synthesis and characterization of germanium monosulphide (GeS)

Indian Academy of Sciences (India)

This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

New optical sensing technique of tissue viability and blood flow based on nanophotonic iterative multi-plane reflectance measurements

Directory of Open Access Journals (Sweden)

Yariv I

2016-10-01

Full Text Available Inbar Yariv,1 Menashe Haddad,2,3 Hamootal Duadi,1 Menachem Motiei,1 Dror Fixler1 1Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan, Israel; 2Sackler School of Medicine, Tel-Aviv University, Tel-Aviv, Israel; 3Mayanei Hayeshua Medical Center, Benei Brak, Israel Abstract: Physiological substances pose a challenge for researchers since their optical properties change constantly according to their physiological state. Examination of those substances noninvasively can be achieved by different optical methods with high sensitivity. Our research suggests the application of a novel noninvasive nanophotonics technique, ie, iterative multi-plane optical property extraction (IMOPE based on reflectance measurements, for tissue viability examination and gold nanorods (GNRs and blood flow detection. The IMOPE model combines an experimental setup designed for recording light intensity images with the multi-plane iterative Gerchberg-Saxton algorithm for reconstructing the reemitted light phase and calculating its standard deviation (STD. Changes in tissue composition affect its optical properties which results in changes in the light phase that can be measured by its STD. We have demonstrated this new concept of correlating the light phase STD and the optical properties of a substance, using transmission measurements only. This paper presents, for the first time, reflectance based IMOPE tissue viability examination, producing a decrease in the computed STD for older tissues, as well as investigating their organic material absorption capability. Finally, differentiation of the femoral vein from adjacent tissues using GNRs and the detection of their presence within blood circulation and tissues are also presented with high sensitivity (better than computed tomography to low quantities of GNRs (<3 mg. Keywords: Gerchberg-Saxton, optical properties, gold nanorods, blood vessel, tissue viability

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.

2010-04-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

2010-01-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

X-ray radiometric analysis of lead and zinc concentrates using germanium radiation detector

International Nuclear Information System (INIS)

Vajgachev, A.A.; Mamysh, V.A.; Mil'chakov, V.I.; Shchekin, K.I.; Berezkin, V.V.

1975-01-01

The results of determination of lead, zinc and iron in lead and zinc concentrates by the X-ray-radiometric method with the use of germanium semiconductor detector are presented. In the experiments the 57 Co source and tritium-zirconium target were used. The activity of 57 Co was 2 mc. The area of the germanium detector employed was 5g mm 2 , its thickness - 2.3 mm. In lead concentrates zinc and iron were determined from the direct intensity of K-series radiation. In the analysis of zinc concentrates the same conditions of recording and excitation were used as in the case of lead concentrates, but the measurements were conducted in saturated layers. It is demonstrated that the use of germanium semiconductor detectors in combination with the suggested methods of measurements makes it possible to perform determination of iron, zinc and lead in zinc and lead concentrates with permissible error

Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

Energy Technology Data Exchange (ETDEWEB)

Moffatt, Robert [Stanford Univ., CA (United States)

2016-03-01

In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Our measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

International Nuclear Information System (INIS)

Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

2009-01-01

High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

Radiation-enhanced self- and boron diffusion in germanium

DEFF Research Database (Denmark)

Schneider, S.; Bracht, H.; Klug, J.N.

2013-01-01

We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...

Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon; Etude de l'effet des irradiations neutronique et electronique sur la conductibilite thermique aux basses temperatures du germanium et du silicium

Energy Technology Data Exchange (ETDEWEB)

Vandevyver, M [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1967-06-15

The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [French] Les principaux resultats obtenus au cours de ce travail sont les suivants : 1 Les irradiations neutroniques (a 300 deg. K) introduisent des defauts de reseau dans le germanium et le silicium et l'on observe correlativement pour ces materiaux, une tres importante diminution de conductibilite thermique dans le domaine des basses temperatures (4-300 deg. K). Les resultats obtenus ont pu etre interpretes en admettant principalement: pour le silicium, une diffusion des phonons par les champs de contrainte dus aux defauts; pour le germanium, une diffusion additionnelle du type electron-phonon. 2 Des recuits effectues sur ces materiaux au-dessus de 373 deg. K ont montre une restauration de la conductibilite thermique dans tout l'intervalle de temperature de mesure (4-300 deg. K) et comportant pour le germanium et le silicium, deux etapes de recuit 3 L'etude de la conductibilite thermique de germanium (initialement N ou P) apres une irradiation electronique, a montre que la diffusion des phonons

Photoluminescent polysaccharide-coated germanium(IV) oxide nanoparticles

Czech Academy of Sciences Publication Activity Database

Lobaz, Volodymyr; Rabyk, Mariia; Pánek, Jiří; Doris, E.; Nallet, F.; Štěpánek, Petr; Hrubý, Martin

2016-01-01

Roč. 294, č. 7 (2016), s. 1225-1235 ISSN 0303-402X R&D Projects: GA MŠk(CZ) 7AMB14FR027; GA ČR(CZ) GA13-08336S; GA MZd(CZ) NV15-25781A Institutional support: RVO:61389013 Keywords : germanium oxide nanoparticles * polysaccharide coating * photoluminescent label Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.723, year: 2016

Filtering microphonics in dark matter germanium experiments

International Nuclear Information System (INIS)

Morales, J.; Garcia, E.; Ortiz de Solorzano, A.; Morales, A.; Nunz-Lagos, R.; Puimedon, J.; Saenz, C.; Villar, J.A.

1992-01-01

A technique for reducing the microphonic noise in a germanium spectrometer used in dark matter particles searches is described. Filtered energy spectra, corresponding to 48.5 kg day of data in a running experiment in the Canfranc tunnel are presented. Improvements of this filtering procedure with respect to the method of rejecting those events not distributed evenly in time are also discussed. (orig.)

Vacancy-acceptor complexes in germanium produced by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Feuser, U.; Vianden, R. (Inst. fuer Strahlen- und Kernphysik, Univ. Bonn (Germany)); Alves, E.; Silva, M.F. da (Dept. de Fisica, ICEN/LNETI, Sacavem (Portugal)); Szilagyi, E.; Paszti, F. (Central Research Inst. for Physics, Hungarian Academy of Sciences, Budapest (Hungary)); Soares, J.C. (Centro de Fisica Nuclear, Univ. Lisbon (Portugal))

1991-07-01

Combining results obtained by the {gamma}-{gamma} perturbed angular correlation method, Rutherford backscattering and elastic recoil detection of hydrogen, a defect complex formed in germanium by indium implantation is identified as a vacancy trapped by the indium probe. (orig.).

Composite germanium monochromators - results for the TriCS

Energy Technology Data Exchange (ETDEWEB)

Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

Segmented Monolithic Germanium Detector Arrays for X-ray Absorption Spectroscopy. Final Report

International Nuclear Information System (INIS)

Hull, Ethan L.

2011-01-01

The experimental results from the Phase I effort were extremely encouraging. During Phase I PHDs Co. made the first strides toward a new detector technology that could have great impact on synchrotron x-ray absorption (XAS) measurements, and x-ray detector technology in general. Detector hardware that allowed critical demonstration measurements of our technology was designed and fabricated. This new technology allows good charge collection from many pixels on a single side of a multi-element monolithic germanium planar detector. The detector technology provides 'dot-like' collection electrodes having very low capacitance. The detector technology appears to perform as anticipated in the Phase I proposal. In particular, the 7-pixel detector studied showed remarkable properties; making it an interesting example of detector physics. The technology is enabled by the use of amorphous germanium contact technology on germanium planar detectors. Because of the scalability associated with the fabrication of these technologies at PHDs Co., we anticipate being able to supply larger detector systems at significantly lower cost than systems made in the conventional manner.

First-principles study of the diffusion mechanisms of the self-interstitial in germanium

International Nuclear Information System (INIS)

Carvalho, A; Jones, R; Janke, C; Goss, J P; Briddon, P R; Oeberg, S

2008-01-01

The self-interstitial in germanium can assume multiple configurations depending on the temperature and charge state. Here, we employ a first-principles density functional method to investigate the diffusion mechanisms of this defect. The energy barriers associated with the transformation between different structures are determined by the climbing nudged elastic band method, as a function of the charge state. The relation between the thermodynamic properties of the self-interstitial and the temperature evolution of electron radiation damage in germanium are discussed

Wilcoxon signed-rank-based technique for the pulse-shape analysis of HPGe detectors

Science.gov (United States)

Martín, S.; Quintana, B.; Barrientos, D.

2016-07-01

The characterization of the electric response of segmented-contact high-purity germanium detectors requires scanning systems capable of accurately associating each pulse with the position of the interaction that generated it. This process requires an algorithm sensitive to changes above the electronic noise in the pulse shapes produced at different positions, depending on the resolution of the Ge crystal. In this work, a pulse-shape comparison technique based on the Wilcoxon signed-rank test has been developed. It provides a method to distinguish pulses coming from different interaction points in the germanium crystal. Therefore, this technique is a necessary step for building a reliable pulse-shape database that can be used later for the determination of the position of interaction for γ-ray tracking spectrometry devices such as AGATA, GRETA or GERDA. The method was validated by comparison with a χ2 test using simulated and experimental pulses corresponding to a Broad Energy germanium detector (BEGe).

Wilcoxon signed-rank-based technique for the pulse-shape analysis of HPGe detectors

Energy Technology Data Exchange (ETDEWEB)

Martín, S., E-mail: sergiomr@usal.es; Quintana, B.; Barrientos, D.

2016-07-01

The characterization of the electric response of segmented-contact high-purity germanium detectors requires scanning systems capable of accurately associating each pulse with the position of the interaction that generated it. This process requires an algorithm sensitive to changes above the electronic noise in the pulse shapes produced at different positions, depending on the resolution of the Ge crystal. In this work, a pulse-shape comparison technique based on the Wilcoxon signed-rank test has been developed. It provides a method to distinguish pulses coming from different interaction points in the germanium crystal. Therefore, this technique is a necessary step for building a reliable pulse-shape database that can be used later for the determination of the position of interaction for γ-ray tracking spectrometry devices such as AGATA, GRETA or GERDA. The method was validated by comparison with a χ{sup 2} test using simulated and experimental pulses corresponding to a Broad Energy germanium detector (BEGe).

Wilcoxon signed-rank-based technique for the pulse-shape analysis of HPGe detectors

International Nuclear Information System (INIS)

Martín, S.; Quintana, B.; Barrientos, D.

2016-01-01

The characterization of the electric response of segmented-contact high-purity germanium detectors requires scanning systems capable of accurately associating each pulse with the position of the interaction that generated it. This process requires an algorithm sensitive to changes above the electronic noise in the pulse shapes produced at different positions, depending on the resolution of the Ge crystal. In this work, a pulse-shape comparison technique based on the Wilcoxon signed-rank test has been developed. It provides a method to distinguish pulses coming from different interaction points in the germanium crystal. Therefore, this technique is a necessary step for building a reliable pulse-shape database that can be used later for the determination of the position of interaction for γ-ray tracking spectrometry devices such as AGATA, GRETA or GERDA. The method was validated by comparison with a χ"2 test using simulated and experimental pulses corresponding to a Broad Energy germanium detector (BEGe).

Grafting of Oligo(ethylene glycol) Functionalized Calix[4]arene-tetra-diazonium Salts for Antifouling Germanium and Gold Surfaces.

Science.gov (United States)

Blond, Pascale; Mattiuzzi, Alice; Valkenier, Hennie; Troian-Gautier, Ludovic; Bergamini, Jean-François; Doneux, Thomas; Goormaghtigh, Erik; Raussens, Vincent; Jabin, Ivan

2018-05-03

Biosensors that can determine protein concentration and structure are highly desired for biomedical applications. For the development of such biosensors, the use of Fourier transformed infra-red (FTIR) spectroscopy with the attenuated internal total reflection (ATR) configuration is particularly attractive but it requires appropriate surface functionalization of the ATR optical element. Indeed, the surface has to specifically interact with a target protein in close contact with the optical element and must display antifouling properties to prevent nonspecific adsorption of other proteins. We here report robust monolayers of calix[4]arenes bearing oEGs chains, which were grafted on germanium and gold surfaces via their tetra-diazonium salts. The formation of monolayers of oEGylated calix[4]arenes was confirmed by AFM, IR and contact angle measurements. The antifouling properties of these modified surfaces were studied by ATR-FTIR spectroscopy and fluorescence microscopy and the non-specific absorption of BSA was found to be reduced by 85% compared to non-modified germanium. In other words, the organic coating by oEGylated calix[4]arenes provides remarkable antifouling properties, opening the way to the design of germanium- and gold-based biosensors.

Experience from operating germanium detectors in GERDA

International Nuclear Information System (INIS)

Palioselitis, Dimitrios

2015-01-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76 Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76 Ge was set (T- 0ν 1/2 > 2.1 · 10 25 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats. (paper)

Lithium-Ion (de)insertion reaction of Germanium thin-film electrodes : an electrochemical and in situ XRD study

NARCIS (Netherlands)

Baggetto, L.; Notten, P.H.L.

2009-01-01

Germanium is a promising negative electrode candidate for lithium-ion thin-film batteries because of its very high theoretical storage capacity. When assuming full conversion of the material into the room-temperature equilibrium lithium saturated germanium phase, a theoretical capacity of or of

Silicon and Germanium (111) Surface Reconstruction

Science.gov (United States)

Hao, You Gong

Silicon (111) surface (7 x 7) reconstruction has been a long standing puzzle. For the last twenty years, various models were put forward to explain this reconstruction, but so far the problem still remains unsolved. Recent ion scattering and channeling (ISC), scanning tunneling microscopy (STM) and transmission electron diffraction (TED) experiments reveal some new results about the surface which greatly help investigators to establish better models. This work proposes a silicon (111) surface reconstruction mechanism, the raising and lowering mechanism which leads to benzene -like ring and flower (raised atom) building units. Based on these building units a (7 x 7) model is proposed, which is capable of explaining the STM and ISC experiment and several others. Furthermore the building units of the model can be used naturally to account for the germanium (111) surface c(2 x 8) reconstruction and other observed structures including (2 x 2), (5 x 5) and (7 x 7) for germanium as well as the (/3 x /3)R30 and (/19 x /19)R23.5 impurity induced structures for silicon, and the higher temperature disordered (1 x 1) structure for silicon. The model is closely related to the silicon (111) surface (2 x 1) reconstruction pi-bonded chain model, which is the most successful model for the reconstruction now. This provides an explanation for the rather low conversion temperature (560K) of the (2 x 1) to the (7 x 7). The model seems to meet some problems in the explanation of the TED result, which is explained very well by the dimer, adatom and stacking fault (DAS) model proposed by Takayanagi. In order to explain the TED result, a variation of the atomic scattering factor is proposed. Comparing the benzene-like ring model with the DAS model, the former needs more work to explain the TED result and the later has to find a way to explain the silicon (111) surface (1 x 1) disorder experiment.

Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

CERN Document Server

Kuleev, I G

2001-01-01

The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

Nanophotonics-enabled solar membrane distillation for off-grid water purification.

Science.gov (United States)

Dongare, Pratiksha D; Alabastri, Alessandro; Pedersen, Seth; Zodrow, Katherine R; Hogan, Nathaniel J; Neumann, Oara; Wu, Jinjian; Wang, Tianxiao; Deshmukh, Akshay; Elimelech, Menachem; Li, Qilin; Nordlander, Peter; Halas, Naomi J

2017-07-03

With more than a billion people lacking accessible drinking water, there is a critical need to convert nonpotable sources such as seawater to water suitable for human use. However, energy requirements of desalination plants account for half their operating costs, so alternative, lower energy approaches are equally critical. Membrane distillation (MD) has shown potential due to its low operating temperature and pressure requirements, but the requirement of heating the input water makes it energy intensive. Here, we demonstrate nanophotonics-enabled solar membrane distillation (NESMD), where highly localized photothermal heating induced by solar illumination alone drives the distillation process, entirely eliminating the requirement of heating the input water. Unlike MD, NESMD can be scaled to larger systems and shows increased efficiencies with decreased input flow velocities. Along with its increased efficiency at higher ambient temperatures, these properties all point to NESMD as a promising solution for household- or community-scale desalination.

Diffusion of E centers in germanium predicted using GGA+U approach

KAUST Repository

Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Schwingenschlö gl, Udo

2011-01-01

Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

Diffusion of E centers in germanium predicted using GGA+U approach

KAUST Repository

Tahini, H. A.

2011-08-17

Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

Directory of Open Access Journals (Sweden)

Felix Pyatkov

2017-01-01

Full Text Available Carbon nanotubes (CNTs have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.

Time-resolved spectroscopy of plasma resonances in highly excited silicon and germanium

International Nuclear Information System (INIS)

Huang, C.Y.; Malvezzi, A.M.; Bloembergen, N.; Kurz, H.

1985-01-01

The dynamics of the electron-hole plasma in silicon and germanium samples irradiated by 20 ps. 532 nm laser pulses has been investigated in the near infrared by the time-resolved picosecond optical spectroscopy. The experimental reflectivities and transmission are compared with the predictions of the thermal model for degenerate carrier distributions through the Drude formalism. Above a certain fluence, a significant deviation between measured and calculated values indicates a strong increase of the recombination rate as soon as the plasma resonances become comparable with the band gaps. These new plasmon-aided recombination channels are particularly pronounced in germanium. 15 refs., 8 figs

Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

Energy Technology Data Exchange (ETDEWEB)

Classen, Nathan Robert [Iowa State Univ., Ames, IA (United States)

2002-01-01

The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular β C-H insertion mechanism.

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter.

Science.gov (United States)

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-09

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

CERN Document Server

Jakšic, Zoran

2014-01-01

The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

Directory of Open Access Journals (Sweden)

Partha Talukdar

Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

International Nuclear Information System (INIS)

Tanaka, H.; Mori, S.; Morioka, N.; Suda, J.; Kimoto, T.

2014-01-01

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependence was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications

Electrochemical characterization of irreversibly adsorbed germanium on platinum stepped surfaces vicinal to Pt(1 0 0)

International Nuclear Information System (INIS)

Rodriguez, P.; Herrero, E.; Solla-Gullon, J.; Vidal-Iglesias, F.J.; Aldaz, A.; Feliu, J.M.

2005-01-01

The electrochemical behavior of germanium irreversibly adsorbed at stepped surfaces vicinal to the Pt(1 0 0) pole is reported. The process taking part on the (1 0 0) terraces is evaluated from charge density measurements and calibration lines versus the terrace dimension are plotted. On the series Pt(2n - 1,1,1) having (1 1 1) monoatomic steps, the charge involved in the redox process undergone by the irreversibly adsorbed germanium is able to account for (n - 0.5) terrace atoms, thus suggesting some steric difficulties in the growth of the adlayer on the (1 0 0) terraces. Conversely, no steric problems are apparent in the series Pt(n,1,0) in which more open (1 0 0) steps are present on the (1 0 0) terraces. In this latter case the charge density under the germanium redox peaks is proportional to the number of terrace atoms. Some comparison is made with other stepped surfaces to understand the behavior and stability of germanium irreversibly adsorbed on the different platinum surface sites

Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

International Nuclear Information System (INIS)

Olsen, Sarah H.

2002-01-01

Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

Performance of a Small Anode Germanium Well detector

International Nuclear Information System (INIS)

Adekola, A.S.; Colaresi, J.; Douwen, J.; Mueller, W.F.; Yocum, K.M.

2015-01-01

The performance of Small Anode Germanium (SAGe) Well detector [1] has been evaluated for a range of sample sizes and geometries counted inside the well, on the end cap or in Marinelli beakers. The SAGe Well is a new type of low capacitance germanium well detector manufactured using small anode technology. The detector has similar energy resolution performance to semi-planar detectors, and offers significant improvement over the Coaxial and existing Well detectors. Resolution performance of 0.75 keV Full Width at Half Maxiumum (FWHM) at 122 keV γ-ray energy and resolution of 2.0–2.3 keV FWHM at 1332 keV γ-ray energy are guaranteed. Such outstanding resolution performance will benefit environmental applications in revealing the detailed radionuclide content of samples, particularly at low energy, and will enhance the detection sensitivity resulting in reduced counting time. This paper reports the counting performance of SAGe Well detector for range of sample sizes and geometries and how it compares to other detector types

Performance of a Small Anode Germanium Well detector

Energy Technology Data Exchange (ETDEWEB)

Adekola, A.S., E-mail: aderemi.adekola@canberra.com; Colaresi, J.; Douwen, J.; Mueller, W.F.; Yocum, K.M.

2015-06-01

The performance of Small Anode Germanium (SAGe) Well detector [1] has been evaluated for a range of sample sizes and geometries counted inside the well, on the end cap or in Marinelli beakers. The SAGe Well is a new type of low capacitance germanium well detector manufactured using small anode technology. The detector has similar energy resolution performance to semi-planar detectors, and offers significant improvement over the Coaxial and existing Well detectors. Resolution performance of 0.75 keV Full Width at Half Maxiumum (FWHM) at 122 keV γ-ray energy and resolution of 2.0–2.3 keV FWHM at 1332 keV γ-ray energy are guaranteed. Such outstanding resolution performance will benefit environmental applications in revealing the detailed radionuclide content of samples, particularly at low energy, and will enhance the detection sensitivity resulting in reduced counting time. This paper reports the counting performance of SAGe Well detector for range of sample sizes and geometries and how it compares to other detector types.

Characterisation of the SmartPET planar Germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Boston, H.C. [Department of Physics, University of Liverpool, Oliver Lodge Laboratory, Liverpool L69 7ZE (United Kingdom)], E-mail: H.C.Boston@liverpool.ac.uk; Boston, A.J.; Cooper, R.J.; Cresswell, J.; Grint, A.N.; Mather, A.R.; Nolan, P.J.; Scraggs, D.P.; Turk, G. [Department of Physics, University of Liverpool, Oliver Lodge Laboratory, Liverpool L69 7ZE (United Kingdom); Hall, C.J.; Lazarus, I. [CCLRC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Berry, A.; Beveridge, T.; Gillam, J.; Lewis, R. [School of Physics and Materials Engineering, Monash University, Melbourne (Australia)

2007-08-21

Small Animal Reconstruction PET (SmartPET) is a project funded by the UK medical research council (MRC) to demonstrate proof of principle that Germanium can be utilised in Positron Emission Tomography (PET). The SmartPET demonstrator consists of two orthogonal strip High Purity Germanium (HPGe) planar detectors manufactured by ORTEC. The aim of the project is to produce images of an internal source with sub mm{sup 3} spatial resolution. Before this image can be achieved the detectors have to be fully characterised to understand the response at any given location to a {gamma}-ray interaction. This has been achieved by probing the two detectors at a number of specified points with collimated sources of various energies and strengths. A 1 mm diameter collimated beam of photons was raster scanned in 1 mm steps across the detector. Digital pulse shape data were recorded from all the detector channels and the performance of the detector for energy and position determination has been assessed. Data will be presented for the first SmartPET detector.

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

Directory of Open Access Journals (Sweden)

Ashim Dhakal

2017-02-01

Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

Design and Fabrication of 1 × 2 Nanophotonic Switch

Directory of Open Access Journals (Sweden)

Asaf Shahmoon

2010-01-01

Full Text Available We present the design and the fabrication of a novel 1×2 nanophotonic switch. The switch is a photonic T-junction in which a gold nano particle is being positioned in the junction using the tip of an atomic force microscope (AFM. The novelty of this 1×2 switch is related to its ability to control the direction of wave that propagates along a photonic structure. The selectivity of the direction is determined by a gold nanoparticle having dimension of a few tens of nanometer. This particle can be shifted. The shift of the gold nano particle can be achieved by applying voltage or by illuminating it with a light source. The shifts of the particle, inside the air gap, direct the input beam ones to the left output of the junction and once to its right output. Three types of simulations have been done in order to realize the photonic T-junction, and they are as follows: photonic crystal structures, waveguide made out of PMMA, and a silicon waveguide.

Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

Science.gov (United States)

Leung, Michael

Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron

Germanium microstrip detectors with 50 and 100 μm pitch

International Nuclear Information System (INIS)

Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bottigli, U.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Raso, G.; Ristori, L.; Scribano, A.; Stefanini, A.; Tenchini, R.; Tonelli, G.; Triggiani, G.; Haller, E.E.; Hansen, W.L.; Luke, P.N.

1984-01-01

Multi-electrode germanium detectors are being used as an active target for decay path measurements of charmed mesons. The procedure used to fabricate such detectors is described and a brief analysis of their performance is given. (orig.)

Vanadocene reactions with mixed acylates of silicon, germanium and tin

International Nuclear Information System (INIS)

Latyaeva, V.N.; Lineva, A.N.; Zimina, S.V.; Gordetsov, A.S.; Dergunov, Yu.I.

1981-01-01

Vanadocene interaction with di-and tri-alkyl (aryl)-derivatives of silicon, tin and germanium is studied. Dibutyltin dibenzoate under mild conditions (20 deg C, toluene) oxidates vanadocene to [CpV(OCOC 6 H 5 ) 2 ] 2 , at that, the splitting off of one Cp group in the form of cyclopentadiene and formation of the products of tin-organic fragment disproportionation (tributyltin benzoate, dibutyltin, metallic tin) take place. Tributyltin benzoate oxidates vanadocene at the mole ratio 2:1 and during prolong heating (120 deg C) in the absence of the solvent, [CpV(OCOC 6 H 5 ) 2 ] 2 and hexabutyldistannate are the products of the reaction. Acetates R 3 SnOCOCH 3 react in the similar way. The reactivity of mono- and diacylates of germanium and silicon decreases in the series of derivatives Sn>Ge>Si [ru

Position resolution simulations for the inverted-coaxial germanium detector, SIGMA

Science.gov (United States)

Wright, J. P.; Harkness-Brennan, L. J.; Boston, A. J.; Judson, D. S.; Labiche, M.; Nolan, P. J.; Page, R. D.; Pearce, F.; Radford, D. C.; Simpson, J.; Unsworth, C.

2018-06-01

The SIGMA Germanium detector has the potential to revolutionise γ-ray spectroscopy, providing superior energy and position resolving capabilities compared with current large volume state-of-the-art Germanium detectors. The theoretical position resolution of the detector as a function of γ-ray interaction position has been studied using simulated detector signals. A study of the effects of RMS noise at various energies has been presented with the position resolution ranging from 0.33 mm FWHM at Eγ = 1 MeV, to 0.41 mm at Eγ = 150 keV. An additional investigation into the effects pulse alignment have on pulse shape analysis and in turn, position resolution has been performed. The theoretical performance of SIGMA operating in an experimental setting is presented for use as a standalone detector and as part of an ancillary system.

Bond particle model for semiconductor melts and its application to liquid structure germanium

International Nuclear Information System (INIS)

Ferrante, A.; Tosi, M.P.

1988-08-01

A simple type of liquid state model is proposed to describe on a primitive level the melt of an elemental group IV semiconductor as a mixture of atoms and bond particles. The latter, on increase of a coupling strength parameter becomes increasingly localized between pairs of atoms up to local tetrahedral coordination of atoms by bond particles. Angular interatomic correlations are built into the model as bond particle localization grows, even though the bare interactions between the components of the liquid are formally described solely in terms of central pair potentials. The model is solved for liquid structure by standard integral equation techniques of liquid state theory and by Monte Carlo simulation, for values of the parameters which are appropriate to liquid germanium down to strongly supercooled states. The calculated liquid structure is compared with the results of diffraction experiments on liquid germanium near freezing and discussed in relation to diffraction data on amorphous germanium. The model suggests simple melting criteria for elemental and polar semiconductors, which are empirically verified. (author). 25 refs, 9 figs, 3 tabs

An ultralow background germanium gamma-ray spectrometer

International Nuclear Information System (INIS)

Reeves, R.H.; Brodzinski, R.L.; Hensley, W.K.; Ryge, P.

1984-01-01

The monitoring of minimum detectable activity is becoming increasingly important as environmental concerns and regulations require more sensitive measurement of the radioactivity levels in the workplace and the home. In measuring this activity, however, the background becomes one of the limiting factors. Anticoincidence systems utilizing both NaI(T1) and plastic scintillators have proven effective in reducing some components of the background, but radiocontaminants in the various regions of these systems have limited their effectiveness, and their cost is often prohibitive. In order to obtain a genuinely low background detector system, all components must be free of detectable radioactivity, and the cosmic ray produced contribution must be significantly reduced. Current efforts by the authors to measure the double beta decay of Germanium 76 as predicted by Grand Unified Theories have resulted in the development of a high resolution germanium diode gamma spectrometer with an exceptionally low background. This paper describes the development of this system, outlines the configuration and operation of its preamplifier, linear amplifier, analog-to-digital converter, 4096-channel analyzer, shielding consisting of lead-sandwiched plastic scintillators wrapped in cadmium foil, photomultiplier, and its pulse generator and discriminator, and then discusses how the system can be utilized to significantly reduce the background in high resolution photon spectrometers at only moderate cost

Fundamental investigation of high temperature operation of field effect transistor devices

Science.gov (United States)

Chern, Jehn-Huar

In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

Improving axion detection sensitivity in high purity germanium detector based experiments

Science.gov (United States)

Xu, Wenqin; Elliott, Steven

2015-04-01

Thanks to their excellent energy resolution and low energy threshold, high purity germanium (HPGe) crystals are widely used in low background experiments searching for neutrinoless double beta decay, e.g. the MAJORANA DEMONSTRATOR and the GERDA experiments, and low mass dark matter, e.g. the CDMS and the EDELWEISS experiments. A particularly interesting candidate for low mass dark matter is the axion, which arises from the Peccei-Quinn solution to the strong CP problem and has been searched for in many experiments. Due to axion-photon coupling, the postulated solar axions could coherently convert to photons via the Primakeoff effect in periodic crystal lattices, such as those found in HPGe crystals. The conversion rate depends on the angle between axions and crystal lattices, so the knowledge of HPGe crystal axis is important. In this talk, we will present our efforts to improve the HPGe experimental sensitivity to axions by considering the axis orientations in multiple HPGe crystals simultaneously. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Robust, directed assembly of fluorescent nanodiamonds.

Science.gov (United States)

Kianinia, Mehran; Shimoni, Olga; Bendavid, Avi; Schell, Andreas W; Randolph, Steven J; Toth, Milos; Aharonovich, Igor; Lobo, Charlene J

2016-10-27

Arrays of fluorescent nanoparticles are highly sought after for applications in sensing, nanophotonics and quantum communications. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based on covalent bonding of carboxyl to amine functional carbon seeds and is applicable to any material, and to non-planar surfaces. Our results pave the way to directed assembly of sensors and nanophotonics devices.

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

International Nuclear Information System (INIS)

Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

2015-01-01

The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

A nanoplasmonic switch based on molecular machines

KAUST Repository

Zheng, Yue Bing

2009-06-01

We aim to develop a molecular-machine-driven nanoplasmonic switch for its use in future nanophotonic integrated circuits (ICs) that have applications in optical communication, information processing, biological and chemical sensing. Experimental data show that an Au nanodisk array, coated with rotaxane molecular machines, switches its localized surface plasmon resonances (LSPR) reversibly when it is exposed to chemical oxidants and reductants. Conversely, bare Au nanodisks and disks coated with mechanically inert control compounds, do not display the same switching behavior. Along with calculations based on time-dependent density functional theory (TDDFT), these observations suggest that the nanoscale movements within surface-bound "molecular machines" can be used as the active components in plasmonic devices. ©2009 IEEE.

Development of revitalisation technique for impaired lithium doped germanium detector

International Nuclear Information System (INIS)

Singh, N.S.B.; Rafi Ahmed, A.G.; Balasubramanian, G.R.

1994-01-01

Semiconductor detectors play very significant role in photon detection and are important tools in the field of gamma spectroscopy. Lithium doped germanium detectors belong to this category. The development of revitalisation technique for these impaired detectors are discussed in this report

Photonics and nanophotonics and information and communication technologies in modern food packaging.

Science.gov (United States)

Sarapulova, Olha; Sherstiuk, Valentyn; Shvalagin, Vitaliy; Kukhta, Aleksander

2015-01-01

The analysis of the problem of conjunction of information and communication technologies (ICT) with packaging industry and food production was made. The perspective of combining the latest advances of nanotechnology, including nanophotonics, and ICT for creating modern smart packaging was shown. There were investigated luminescent films with zinc oxide nanoparticles, which change luminescence intensity as nano-ZnO interacts with decay compounds of food products, for active and intelligent packaging. High luminescent transparent films were obtained from colloidal suspension of ZnO and polyvinylpyrrolidone (PVP). The influence of molecular mass, concentration of nano-ZnO, and film thickness on luminescent properties of films was studied in order to optimize the content of the compositions. The possibility of covering the obtained films with polyvinyl alcohol was considered for eliminating water soluble properties of PVP. The luminescent properties of films with different covers were studied. The insoluble in water composition based on ZnO stabilized with colloidal silicon dioxide and PVP in polymethylmethacrylate was developed, and the luminescent properties of films were investigated. The compositions are non-toxic, safe, and suitable for applying to the inner surface of active and intelligent packaging by printing techniques, such as screen printing, flexography, inkjet, and pad printing.

Photonics and Nanophotonics and Information and Communication Technologies in Modern Food Packaging

Science.gov (United States)

Sarapulova, Olha; Sherstiuk, Valentyn; Shvalagin, Vitaliy; Kukhta, Aleksander

2015-05-01

The analysis of the problem of conjunction of information and communication technologies (ICT) with packaging industry and food production was made. The perspective of combining the latest advances of nanotechnology, including nanophotonics, and ICT for creating modern smart packaging was shown. There were investigated luminescent films with zinc oxide nanoparticles, which change luminescence intensity as nano-ZnO interacts with decay compounds of food products, for active and intelligent packaging. High luminescent transparent films were obtained from colloidal suspension of ZnO and polyvinylpyrrolidone (PVP). The influence of molecular mass, concentration of nano-ZnO, and film thickness on luminescent properties of films was studied in order to optimize the content of the compositions. The possibility of covering the obtained films with polyvinyl alcohol was considered for eliminating water soluble properties of PVP. The luminescent properties of films with different covers were studied. The insoluble in water composition based on ZnO stabilized with colloidal silicon dioxide and PVP in polymethylmethacrylate was developed, and the luminescent properties of films were investigated. The compositions are non-toxic, safe, and suitable for applying to the inner surface of active and intelligent packaging by printing techniques, such as screen printing, flexography, inkjet, and pad printing.

Streamline-based microfluidic device

Science.gov (United States)

Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

2013-01-01

The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

Race for novel high-index all-dielectric and hybrid metal-dielectric nanophotonic materials: Pit-stop optical tests

Science.gov (United States)

Kudryashov, S. I.; Saraeva, I. N.; Ivanova, A. K.; Kudryavtseva, A. D.; Tchiernega, N. V.; Ionin, A. A.; Kuchmizhak, A. A.; Zayarny, D. A.

2017-09-01

Magnetic dipolar Mie-resonance of nanodiamonds supports their highly-efficient stimulated low-frequency Raman scattering via nanosecond laser excitation of their fundamental breathing mode, with strong additional plasmonic enhancement of the Raman conversion efficiency upon ablative capping of the resonant nanodiamond core by a silver nanoshell with a broad overlapping electrical dipolar Mie-resonance. Also, crystalline selenium nanoparticles, exhibiting the high refractive index in the visible/near-IR ranges, were demonstrated as promising all-dielectric sensing building nanoblocks in nanophotonics.

Effect of normal processes on thermal conductivity of germanium ...

Indian Academy of Sciences (India)

Abstract. The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between differ- ent phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and ...

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

Science.gov (United States)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Energy Technology Data Exchange (ETDEWEB)

Bruch, Alexander W.; Xiong, Chi; Leung, Benjamin; Poot, Menno; Han, Jung; Tang, Hong X., E-mail: hong.tang@yale.edu [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States)

2015-10-05

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

Energy Technology Data Exchange (ETDEWEB)

Podkopaev, O. I. [Joint-Stock Company “Germanium” (Russian Federation); Shimanskiy, A. F., E-mail: shimanaf@mail.ru [Siberian Federal University (Russian Federation); Kopytkova, S. A.; Filatov, R. A. [Joint-Stock Company “Germanium” (Russian Federation); Golubovskaya, N. O. [Siberian Federal University (Russian Federation)

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

International Nuclear Information System (INIS)

Podkopaev, O. I.; Shimanskiy, A. F.; Kopytkova, S. A.; Filatov, R. A.; Golubovskaya, N. O.

2016-01-01

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Germanium Doping to Improve Carrier Mobility in CdO Films

Directory of Open Access Journals (Sweden)

A. A. Dakhel

2013-01-01

Full Text Available This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( and mobility ( with Ge-incorporation level. The mobility could be improved to a highest value of  cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as  Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.

Bolometric Device Based on Fluxoid Quantization

Science.gov (United States)

Bonetti, Joseph A.; Kenyon, Matthew E.; Leduc, Henry G.; Day, Peter K.

2010-01-01

The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

Evaluation Of The Impact Of The Defense Waste Processing Facility (DWPF) Laboratory Germanium Oxide Use On Recycle Transfers To The H-Tank Farm

International Nuclear Information System (INIS)

Jantzen, C.; Laurinat, J.

2011-01-01

goal of 400 canisters. Since no Waste Acceptance Criteria (WAC) exists for germanium in the Tank Farm, the Effluent Treatment Project, or the Saltstone Production Facility, DWPF has requested an evaluation of the fate of the germanium in the caustic environment of the RCT, the 2H evaporator, and the tank farm. This report evaluates the effect of the addition of germanium to the tank farm based on: (1) the large dilution of Ge in the RCT and tank farm; (2) the solubility of germanium in caustic solutions (pH 12-13); (3) the potential of germanium to precipitate as germanium sodalites in the 2H Evaporator; and (4) the potential of germanium compounds to precipitate in the evaporator feed tank. This study concludes that the impacts of transferring up to 4 kg/yr germanium to the RCT (and subsequently the 2H evaporator feed tank and the 2H evaporator) results in <2 ppm per year (1.834 mg/L) which is the maximum instantaneous concentration expected from DWPF. This concentration is insignificant as most sodium germanates are soluble at the high pH of the feed tank and evaporator solutions. Even if sodium aluminosilicates form in the 2H evaporator, the Ge will likely substitute for some small amount of the Si in these structures and will be insignificant. It is recommended that the DWPF continue with their strategy to add germanium as a laboratory chemical to Attachment 8.2 of the DWPF Waste Compliance Plan (WCP).

Zeeman spectroscopy of Zn-H complex in germanium

International Nuclear Information System (INIS)

Prabakar, J.P.C.; Vickers, R.E.M.; Fisher, P.

1998-01-01

Full text: A divalent substitutional zinc atom in germanium complexed with an interstitial hydrogen atom gives rise to a monovalent acceptor of trigonal symmetry. The axial nature of this complex splits the four-fold degenerate states associated with substitutional point defects into two two-fold degenerate states. Zeeman spectra of the Zn-H complex have been observed for B along and crystallographic directions in the Voigt configuration using linearly polarised radiation. Spectra of the C and D lines for B ≤ 2 Tesla are essentially identical to those of these lines of group III impurities; here B is the field strength. At all fields, splitting of the excited state of the D lines is identical to that for group III acceptors in germanium. The magnetic field dependence of the D components for both E parallel B and E perpendicular B and the selection rules demand that only one of the two two-fold 1s-like energy levels is occupied at the temperatures used instead of both. The results confirm piezospectroscopic studies which demonstrated that the axes of the complexes are along the four covalent bond directions of the host

Interaction between radiation-induced defects and lithium impurity atoms in germanium

International Nuclear Information System (INIS)

Vasil'eva, E.D.; Daluda, Yu.N.; Emtsev, V.V.; Kervalishvili, P.D.; Mashovets, T.V.

1981-01-01

The effect of gamma radiation on germanium doped with lithium in the course of extraction from a melt was studied. 60 Co γ-ray irradiation with the 6.2x10 12 cm -2 x1 -1 intensity was performed at 300 K. The temperature dependences of conductivity and Hall effect was studied in the 4.2-300 K range. It was shown that using this alloying technique lithium atoms in germanium were in a ''free'' state. It was found that on irradiation the lithium atom concentration decreases as a result of production of electrically inactive complexes with participation of lithium atoms. Besides this principal process secondary ones are observed: production of radiation donor-defects with the ionization energy Esub(c) of 80 MeV and compensating acceptors

Characterization of a high-purity germanium detector for small-animal SPECT.

Science.gov (United States)

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-09-21

We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

NARCIS (Netherlands)

Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, G.; Ortolani, Michele

2016-01-01

We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 10²⁰ cm^-3. The dielectric function of the 250 nm thick germanium film

Electron, hole and exciton self-trapping in germanium doped silica glass from DFT calculations with self-interaction correction

International Nuclear Information System (INIS)

Du Jincheng; Rene Corrales, L.; Tsemekhman, Kiril; Bylaska, Eric J.

2007-01-01

Density functional theory (DFT) calculations were employed to understand the refractive index change in germanium doped silica glasses for the trapped states of electronic excitations induced by UV irradiation. Local structure relaxation and excess electron density distribution were calculated upon self-trapping of an excess electron, hole, and exciton in germanium doped silica glass. The results show that both the trapped exciton and excess electron are highly localized on germanium ion and, to some extent, on its oxygen neighbors. Exciton self-trapping is found to lead to the formation of a Ge E' center and a non-bridging hole center. Electron trapping changes the GeO 4 tetrahedron structure into trigonal bi-pyramid with the majority of the excess electron density located along the equatorial line. The self-trapped hole is localized on bridging oxygen ions that are not coordinated to germanium atoms that lead to elongation of the Si-O bonds and change of the Si-O-Si bond angles. We carried out a comparative study of standard DFT versus DFT with a hybrid PBE0 exchange and correlation functional. The results show that the two methods give qualitatively similar relaxed structure and charge distribution for electron and exciton trapping in germanium doped silica glass; however, only the PBE0 functional produces the self-trapped hole

Tunnel current across linear homocatenated germanium chains

International Nuclear Information System (INIS)

Matsuura, Yukihito

2014-01-01

The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e −βL , of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge–Ge bond length is longer than the Si–Si bond length

Bioavailable concentrations of germanium and rare earth elements in soil as affected by low molecular weight organic acids and root exudates

Science.gov (United States)

Wiche, Oliver; Székely, Balázs; Kummer, Nicolai-Alexeji; Heinemann, Ute; Tesch, Silke; Heilmeier, Hermann

2014-05-01

, lanthan, neodymium, gadolinium and erbium in the rhizosphere and therefore the enhancement of bioavailability of the mentioned elements to plants. Based on the suction cup experiment we conclude that in vertical soil profile the bioavailable germanium is heavily affected by the activity of exudates, as the complexation processes of germanium take place at the root zone and below affected by the interplay of the infiltration of citric acid solutions and the actually produced exudates. These studies have been carried out in the framework of the PhytoGerm project, financed by the Federal Ministry of Education and Research, Germany. BS contributed as an Alexander von Humboldt Research Fellow. The authors are grateful to students and laboratory assistants contributing in the field work and sample preparation.

Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

Science.gov (United States)

Carns, Timothy Keith

With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

International Nuclear Information System (INIS)

Heusser, G.; Weber, M.; Hakenmüller, J.; Laubenstein, M.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H.

2015-01-01

We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg -1 for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites

GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

Energy Technology Data Exchange (ETDEWEB)

Heusser, G., E-mail: gerd.heusser@mpi-hd.mpg.de; Weber, M., E-mail: marc.weber@mpi-hd.mpg.de; Hakenmüller, J. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100, Assergi, AQ (Italy); Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany)

2015-11-09

We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

Energy Technology Data Exchange (ETDEWEB)

Heusser, G.; Weber, M.; Hakenmueller, J.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy)

2015-11-15

We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut fuer Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites. (orig.)

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Science.gov (United States)

Toriumi, Akira; Nishimura, Tomonori

2018-01-01

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is expected. This size scaling will end sooner or later, however, because the typical size is approaching the atomic distance level in crystalline Si. In addition, it is said that electron transport in FETs is ballistic or nearly ballistic, which means that the injection velocity at the virtual source is a physical parameter relevant for estimating the driving current. Channel-materials with higher carrier mobility than Si are nonetheless needed, and the carrier mobility in the channels is a parameter important with regard to increasing the injection velocity. Although the density of states in the channel has not been discussed often, it too is relevant for estimating the channel current. Both the mobility and the density of states are in principle related to the effective mass of the carrier. From this device physics viewpoint, we expect germanium (Ge) CMOS to be promising for scaling beyond the Si CMOS limit because the bulk mobility values of electrons and holes in Ge are much higher than those of electrons and holes in Si, and the electron effective mass in Ge is not much less than that in III-V compounds. There is a debate that Ge should be used for p-MOSFETs and III-V compounds for n-MOSFETs, but considering that the variability or nonuniformity of the FET performance in today’s CMOS LSIs is a big challenge, it seems that much more attention should be paid to the simplicity of the material design and of the processing steps. Nevertheless, Ge faces a number of challenges even in case that only the FET level is concerned. One of the big problems with Ge CMOS technology has been its poor performance in n-MOSFETs. While the hole mobility in p-FETs has been improved, the electron mobility in the inversion layer of Ge FETs remains a serious concern. If this is due to the inherent properties of Ge, only p-MOSFETs might be used for device applications. To make Ge CMOS devices

Nanophotonics-enabled smart windows, buildings and wearables

Science.gov (United States)

Smith, Geoff; Gentle, Angus; Arnold, Matthew; Cortie, Michael

2016-06-01

Design and production of spectrally smart windows, walls, roofs and fabrics has a long history, which includes early examples of applied nanophotonics. Evolving nanoscience has a special role to play as it provides the means to improve the functionality of these everyday materials. Improvement in the quality of human experience in any location at any time of year is the goal. Energy savings, thermal and visual comfort indoors and outdoors, visual experience, air quality and better health are all made possible by materials, whose "smartness" is aimed at designed responses to environmental energy flows. The spectral and angle of incidence responses of these nanomaterials must thus take account of the spectral and directional aspects of solar energy and of atmospheric thermal radiation plus the visible and color sensitivity of the human eye. The structures required may use resonant absorption, multilayer stacks, optical anisotropy and scattering to achieve their functionality. These structures are, in turn, constructed out of particles, columns, ultrathin layers, voids, wires, pure and doped oxides, metals, polymers or transparent conductors (TCs). The need to cater for wavelengths stretching from 0.3 to 35 μm including ultraviolet-visible, near-infrared (IR) and thermal or Planck radiation, with a spectrally and directionally complex atmosphere, and both being dynamic, means that hierarchical and graded nanostructures often feature. Nature has evolved to deal with the same energy flows, so biomimicry is sometimes a useful guide.

Nanophotonics-enabled smart windows, buildings and wearables

Directory of Open Access Journals (Sweden)

Smith Geoff

2016-06-01

Full Text Available Design and production of spectrally smart windows, walls, roofs and fabrics has a long history, which includes early examples of applied nanophotonics. Evolving nanoscience has a special role to play as it provides the means to improve the functionality of these everyday materials. Improvement in the quality of human experience in any location at any time of year is the goal. Energy savings, thermal and visual comfort indoors and outdoors, visual experience, air quality and better health are all made possible by materials, whose “smartness” is aimed at designed responses to environmental energy flows. The spectral and angle of incidence responses of these nanomaterials must thus take account of the spectral and directional aspects of solar energy and of atmospheric thermal radiation plus the visible and color sensitivity of the human eye. The structures required may use resonant absorption, multilayer stacks, optical anisotropy and scattering to achieve their functionality. These structures are, in turn, constructed out of particles, columns, ultrathin layers, voids, wires, pure and doped oxides, metals, polymers or transparent conductors (TCs. The need to cater for wavelengths stretching from 0.3 to 35 μm including ultraviolet-visible, near-infrared (IR and thermal or Planck radiation, with a spectrally and directionally complex atmosphere, and both being dynamic, means that hierarchical and graded nanostructures often feature. Nature has evolved to deal with the same energy flows, so biomimicry is sometimes a useful guide.

Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

Science.gov (United States)

Nozaki, Kengo; Matsuo, Shinji; Fujii, Takuro; Takeda, Koji; Shinya, Akihiko; Kuramochi, Eiichi; Notomi, Masaya

2018-04-01

Generally, reverse-biased photodetectors (PDs) are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W). Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

Directory of Open Access Journals (Sweden)

Kengo Nozaki

2018-04-01

Full Text Available Generally, reverse-biased photodetectors (PDs are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W. Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

CDEX-1 1 kg point-contact germanium detector for low mass dark matter searches

International Nuclear Information System (INIS)

Kang Kejun; Yue Qian; Wu Yucheng

2013-01-01

The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P + electrode and the outside N + electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P + and N + electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments. (authors)

The electronic and optical properties of germanium tellurite glasses containing various transition metal oxides

International Nuclear Information System (INIS)

Khan, M.N.

1988-01-01

Various transition metal oxides, such as TiO 2 , V 2 O 5 , NiO, CuO, and ZnO are added to germanium-tellurite glass and measurements are reported of the electrical conductivity, density, optical absorption, infra-red absorption spectra, and electron spin resonance. It is found that the d.c. conductivity of glasses containing the same amount of V 2 O 5 is higher than that of germanium tellurite glasses containing a similar amount of other transition metal oxides, and is due to hopping between localized states. The optical absorption measurements show that the fundamental absorption edge is a function of glass composition and the optical absorption is due to forbidden indirect transitions. From the infra-red absorption spectra, it is found that the addition of transition metal oxides does not introduce any new absorption band in the infra-red spectrum of germanium tellurite glasses. A small shift of existing absorptions toward higher wave number is observed. The ESR measurements revealed that some transition metal ions are diamagnetic while others are paramagnetic in the glass network. (author)

Electromechanically cooled germanium radiation detector system

International Nuclear Information System (INIS)

Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

1999-01-01

We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++, GAMANL, GRPANL and MGAU, typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service . The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted

Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

International Nuclear Information System (INIS)

Vandevyver, M.

1967-06-01

The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

Fabrication of diamond-coated germanium ATR prisms for IR-spectroscopy

Czech Academy of Sciences Publication Activity Database

Babchenko, Oleg; Kozak, Halyna; Ižák, Tibor; Stuchlík, Jiří; Remeš, Zdeněk; Rezek, Bohuslav; Kromka, Alexander

2016-01-01

Roč. 87, May (2016), 67-73 ISSN 0924-2031 R&D Projects: GA ČR GA15-01687S Institutional support: RVO:68378271 Keywords : diamond * low temperature growth * linear antenna microwave plasma * germanium * SEM * FTIR Subject RIV: JI - Composite Materials Impact factor: 1.740, year: 2016

Liquid-helium scintillation detection with germanium photodiodes

International Nuclear Information System (INIS)

Luke, P.N.; Haller, E.E.; Steiner, H.M.

1982-05-01

Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

Science.gov (United States)

Sanchez Perez, Jose Roberto

Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant

The Future of Low Temperature Germanium as Dark Matter Detectors

CERN Multimedia

CERN. Geneva

2009-01-01

The Weakly Interactive Massive Particles (WIMPs) represent one of the most attractive candidates for the dark matter in the universe. With the combination of experiments attempting to detect WIMP scattering in the laboratory, of searches for their annihilation in the cosmos and of their potential production at the LHC, the next five years promise to be transformative. I will review the role played so far by low temperature germanium detectors in the direct detection of WIMPs. Because of its high signal to noise ratio, the simultaneous measurement of athermal phonons and ionization is so far the only demonstrated approach with zero-background. I will argue that this technology can be extrapolated to a target mass of the order of a tonne at reasonable cost and can keep playing a leading role, complementary to noble liquid technologies. I will describe in particular GEODM, the proposed Germanium Observatory for Dark Matter at the US Deep Underground Science and Engineering Laboratory (DUSEL).

Research and Development Supporting a Next Generation Germanium Double Beta Decay Experiment

Science.gov (United States)

Rielage, Keith; Elliott, Steve; Chu, Pinghan; Goett, Johnny; Massarczyk, Ralph; Xu, Wenqin

2015-10-01

To improve the search for neutrinoless double beta decay, the next-generation experiments will increase in source mass and continue to reduce backgrounds in the region of interest. A promising technology for the next generation experiment is large arrays of Germanium p-type point contact detectors enriched in 76-Ge. The experience, expertise and lessons learned from the MAJORANA DEMONSTRATOR and GERDA experiments naturally lead to a number of research and development activities that will be useful in guiding a future experiment utilizing Germanium. We will discuss some R&D activities including a hybrid cryostat design, background reduction in cabling, connectors and electronics, and modifications to reduce assembly time. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

Directory of Open Access Journals (Sweden)

S. Bellucci

2016-12-01

Full Text Available The paper is devoted to the investigation of volume reflection and channeling processes of ultrarelativistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of the Hartree-Fock method and the correct choice of the Debye temperature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the universal form of equations for volume reflection presented in the paper gives a true description of the process at a wide range of particle energies. Standing on this study we make predictions for the mean angle reflection (as a function of the bending radius of positive and negative particles for germanium (110 and (111 crystallographic planes.

Environmental applications for an intrinsic germanium well detector

International Nuclear Information System (INIS)

Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

1984-01-01

The overall performance of an intrinsic germanium well detector for 125 I measurements was investigated in a program of environmental surveillance. Concentrations of 125 I and 131 I were determined in thyroids of road-killed deer showing the highest activities of 125 I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bioindicator for radioiodine around nuclear facilities

Melting point of high-purity germanium stable isotopes

Science.gov (United States)

Gavva, V. A.; Bulanov, A. D.; Kut'in, A. M.; Plekhovich, A. D.; Churbanov, M. F.

2018-05-01

The melting point (Tm) of germanium stable isotopes 72Ge, 73Ge, 74Ge, 76Ge was determined by differential scanning calorimetry. With the increase in atomic mass of isotope the decrease in Tm is observed. The decrease was equal to 0.15 °C per the unit of atomic mass which qualitatively agrees with the value calculated by Lindemann formula accounting for the effect of "isotopic compression" of elementary cell.

Nanophotonic force microscopy: characterizing particle-surface interactions using near-field photonics.

Science.gov (United States)

Schein, Perry; Kang, Pilgyu; O'Dell, Dakota; Erickson, David

2015-02-11

Direct measurements of particle-surface interactions are important for characterizing the stability and behavior of colloidal and nanoparticle suspensions. Current techniques are limited in their ability to measure pico-Newton scale interaction forces on submicrometer particles due to signal detection limits and thermal noise. Here we present a new technique for making measurements in this regime, which we refer to as nanophotonic force microscopy. Using a photonic crystal resonator, we generate a strongly localized region of exponentially decaying, near-field light that allows us to confine small particles close to a surface. From the statistical distribution of the light intensity scattered by the particle we are able to map out the potential well of the trap and directly quantify the repulsive force between the nanoparticle and the surface. As shown in this Letter, our technique is not limited by thermal noise, and therefore, we are able to resolve interaction forces smaller than 1 pN on dielectric particles as small as 100 nm in diameter.

Active noise canceling system for mechanically cooled germanium radiation detectors

Science.gov (United States)

Nelson, Karl Einar; Burks, Morgan T

2014-04-22

A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

Dislocation multiplication rate in the early stage of germanium plasticity

Czech Academy of Sciences Publication Activity Database

Fikar, J.; Dupas, Corinne; Kruml, Tomáš; Jacques, A.; Martin, J. L.

400-401, - (2005), s. 431-434 ISSN 0921-5093. [Dislocations 2004. La Colle-sur-Loup, 13.09.2004-17.09.2004] Institutional research plan: CEZ:AV0Z2041904 Keywords : dislocation multiplication * germanium * constitutive modelling Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.347, year: 2005

Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

Science.gov (United States)

Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

2014-10-28

Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

1981-01-01

The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

Analysis of alternative splicing events for cancer diagnosis using a multiplexing nanophotonic biosensor.

Science.gov (United States)

Huertas, César S; Domínguez-Zotes, Santos; Lechuga, Laura M

2017-01-25

Personalized medicine is a promising tool not only for prevention, screening and development of more efficient treatment strategies, but also for diminishing the side effects caused by current therapies. Deciphering gene regulation pathways provides a reliable prognostic analysis to elucidate the origin of grave diseases and facilitate the selection of the most adequate treatment for each individual. Alternative splicing of mRNA precursors is one of these gene regulation pathways and enables cells to generate different protein outputs from the same gene depending on their developmental or homeostatic status. Its deregulation is strongly linked to disease onset and progression constituting a relevant and innovative class of biomarker. Herein we report a highly selective and sensitive nanophotonic biosensor based on the direct monitoring of the aberrant alternative splicing of Fas gene. Unlike conventional methods, the nanobiosensor performs a real-time detection of the specific isoforms in the fM-pM range without any cDNA synthesis or PCR amplification requirements. The nanobiosensor has been proven isoform-specific with no crosshybridization, greatly minimizing detection biases. The demonstrated high sensitivity and specificity make our nanobiosensor ideal for examining significant tumor-associated expression shifts of alternatively spliced isoforms for the early and accurate theranostics of cancer.

A Flexible Microcontroller-Based Data Acquisition Device

OpenAIRE

Hercog, Darko; Gergič, Bojan

2014-01-01

This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This d...

Quadrupole boson densities in the germanium region by inelastic electron scattering

International Nuclear Information System (INIS)

Goutte, D.

1984-08-01

The collective properties of four germanium isotopes have been explored through the measurement of the transition charge densities of the first two 2 + states. Their spatial features and their apparent anomalous behavior is readily explained in the frame of the Interacting Boson Model

Effect of the microstructure on electrical properties of high-purity germanium

Science.gov (United States)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

Carbon in high-purity germanium

International Nuclear Information System (INIS)

Haller, E.E.; Hansen, W.L.; Luke, P.; McMurray, R.; Jarrett, B.

1981-10-01

Using 14 C-spiked pyrolytic graphite-coated quartz crucibles for the growth of nine ultra-pure germanium single crystals, we have determined the carbon content and distribution in these crystals. Using autoradiography, we observe a rapidly decreasing carbon cluster concentration in successively grown crystals. Nuclear radiation detectors made from the crystals measure the betas from the internally decaying 14 C nuclei with close to 100% efficiency. An average value for the total carbon concentration [ 14 C + 12 C] is approx. 2 x 10 14 cm -3 , a value substantially larger than expected from earlier metallurgical studies. Contrary to the most recent measurement, we find the shape of the beta spectrum to agree very well with the statistical shape predicted for allowed transitions

GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

Energy Technology Data Exchange (ETDEWEB)

Burks, M

2008-11-12

The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

Germanium-76 Isotope Separation by Cryogenic Distillation. Final Report

International Nuclear Information System (INIS)

Stohler, Eric

2007-01-01

The current separation method for Germanium isotopes is electromagnetic separation using Calutrons. The Calutrons have the disadvantage of having a low separation capacity and a high energy cost to achieve the separation. Our proposed new distillation method has the advantage that larger quantities of Germanium isotopes can be separated at a significantly lower cost and in a much shorter time. After nine months of operating the column that is 1.5 meter in length, no significant separation of the isotopes has been measured. We conclude that the length of the column we have been using is too short. In addition, other packing material than the 0.16 inch Propak, 316 ss Protruded metal packing that we used in the column, should be evaluated which may have a better separation factor than the 0.16 inch Propak, 316 ss Protruded metal packing that has been used. We conclude that a much longer column - a minimum of 50 feet length - should be built and additional column packing should be tested to verify that isotopic separation can be achieved by cryogenic distillation. Even a longer column than 50 feet would be desirable.

The distribution of gallium, germanium and indium in conventional and non-conventional resources. Implications for global availability

Energy Technology Data Exchange (ETDEWEB)

Frenzel, Max

2016-10-25

devoted to the chemistry of sphalerite. Sphalerite is the chief host mineral of gallium, germanium and indium in many base-metal sulphide deposits. A better understanding of the geological controls on its composition is therefore most relevant, since base-metal sulphide deposits constitute a major source of all three elements. Making use of the compiled geochemical data, it could be shown that the concentrations of Ga, Ge (also Fe and Mn), and to a lesser degree In, in hydrothermal sphalerite depend strongly on its temperature of formation. The quantification of these dependencies led to the proposal of a new sphalerite geothermometer. Not only do these results have wide-ranging implications for the identification of gallium-, germanium- and indium-rich ore deposits, but they are also of general relevance to the field of economic geology as a whole. To summarise, this thesis introduces a general methodology for the assessment of the geological and technological supply potentials of by-product elements, overcoming the major shortcomings in current approaches. It makes use of relevant analytical and technological (recovery) data. Application to the particular examples of gallium, germanium and indium shows that large differences exist in the supply situations of these superficially similar by-product elements. In the future, assessments of this kind should be extended to all other high-tech elements commonly produced as by-products (e.g. selenium, tellurium, rhenium, hafnium), and the results incorporated into criticality assessments. As demonstrated in this work, this is necessary to avoid serious misrepresentations of the important mid- to long-term issues pertinent to each individual element.

Fabrication and characterization of perovskite-based CH{sub 3}NH{sub 3}Pb{sub 1-x}Ge{sub x}I{sub 3}, CH{sub 3}NH{sub 3}Pb{sub 1-x}Tl{sub x}I{sub 3} and CH{sub 3}NH{sub 3}Pb{sub 1-x}In{sub x}I{sub 3} photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Ohishi, Yuya; Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Suzuki, Atsushi [Department of Materials Science, The University of Shiga Prefecture 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

2016-02-01

Perovskite-type CH{sub 3}NH{sub 3}PbI{sub 3}-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.

MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

Energy Technology Data Exchange (ETDEWEB)

Attolini, G. [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy); Ponraj, J.S. [University of Information Science and Technology, St Paul the Apostle, Ohrid 6000 (Macedonia, The Former Yugoslav Republic of); Frigeri, C.; Buffagni, E.; Ferrari, C. [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy); Musayeva, N.; Jabbarov, R. [Research and Development Center for Hi-Technologies, MCIT, Inshaatchilar ave., 2, AZ1073, Baku (Azerbaijan); Institute of Physics, ANAS, H. Javid ave., 33, AZ1143, Baku (Azerbaijan); Bosi, M., E-mail: bosi@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy)

2016-01-01

Graphical abstract: - Highlights: • Germanium layer were deposited on silicon substrates. • A novel metal organic precursor (isobutyl germane) was used. • MOVPE growth process was optimized. • Layers were characterized by TEM, XRD; SEM and AFM. - Abstract: Being an attractive and demanding candidate in the field of energy conversion, germanium has attained widespread applications. The present work is aimed at the study of metal organic vapour phase epitaxy of germanium thin films on (0 0 1) silicon at different growth temperatures using isobutyl germane as a precursor. The epilayers were characterized by X-ray diffraction, high resolution transmission electron microscopy, atomic force microscopy and scanning electron microscopy in order to understand the structural and morphological properties. The films were found to be epitaxially grown and single crystalline with slight misorientation (below 0.1 degrees). The interface between the film and substrate was analyzed in depth and different temperature dependent growth behaviours were evidenced. The major relevant lattice imperfections observed were attributed to planar defects and threading dislocations.

Effects of Germanium Tetrabromide Addition to Zinc Tetraphenyl Porphyrin / Fullerene Bulk Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Atsushi Suzuki

2014-03-01

Full Text Available The effects of germanium tetrabromide addition to tetraphenyl porphyrin zinc (Zn-TPP/fullerene (C60 bulk heterojunction solar cells were characterized. The light-induced charge separation and charge transfer were investigated by current density and optical absorption. Addition of germanium tetrabromide inserted into active layer of Zn-TPP/C60 as bulk heterojunction had a positive effect on the photovoltaic and optical properties. The photovoltaic mechanism of the solar cells was discussed by experimental results. The photovoltaic performance was due to light-induced exciton promoted by insert of GeBr4 and charge transfer from HOMO of Zn-TPP to LUMO of C60 in the active layer.

Charge Spreading and Position Sensitivity in a Segmented Planar Germanium Detector (Preprint)

National Research Council Canada - National Science Library

Kroeger, R. A; Gehrels, N; Johnson, W. N; Kurfess, J. D; Phlips, B. P; Tueller, J

1998-01-01

The size of the charge cloud collected in a segmented germanium detector is limited by the size of the initial cloud, uniformity of the electric field, and the diffusion of electrons and holes through the detector...

Angular distributions of 250 GeV/c positive particles axially channeled in germanium crystal. Pt. 3

International Nuclear Information System (INIS)

Sun, C.R.; Gibson, W.M.; Kim, I.J.; Williams, G.O.; Carrigan, R.A. Jr.; Chrisman, B.L.; Toohig, T.E.; Guzik, Z.; Nigmanov, T.S.; Tsyganov, A.S.

1982-01-01

Channeling phenomena are observed for charged particles of momentum up to 250 GeV/c in a germanium crystal. The angular distributions of the channeled particles are compared with theoretical predictions based on a diffusion model. The results indicate additional mechanisms leading to dechanneling of the particles although channeling effects are observed for particles incident at up to several times the critical angle, in contrast with the results from low energy channeling. (orig.)

Experimental demonstration of an OFDM receiver based on a silicon-nanophot onic discrete Fourier transform filter

DEFF Research Database (Denmark)

Da Ros, Francesco; Nolle, Markus; Meuer, C.

2014-01-01

We experimentally demonstrate the demultiplexing of 8×13.4 Gbaud OFDM-QPSK subcarriers using a silicon nanophotonic-based discrete Fourier transform (DFT) filter. All eight subcarriers showed less than 1.5 dB OSNR penalty compared to the theoretical limit.......We experimentally demonstrate the demultiplexing of 8×13.4 Gbaud OFDM-QPSK subcarriers using a silicon nanophotonic-based discrete Fourier transform (DFT) filter. All eight subcarriers showed less than 1.5 dB OSNR penalty compared to the theoretical limit....

Self-interstitials and Frenkel pairs in electron-irradiated germanium

International Nuclear Information System (INIS)

Carvalho, A.; Jones, R.; Goss, J.; Janke, C.; Coutinho, J.; Oberg, S.; Briddon, P.R.

2007-01-01

First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the defect. The theoretical model is compared to the results of low temperature electron irradiation in germanium reported in the literature

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

Science.gov (United States)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Environmental applications for an intrinsic germanium well detector

International Nuclear Information System (INIS)

Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

1984-01-01

The overall performance of an intrinsic germanium well detector for 125 I measurements was investigated in a program of environmental surveillance. Concentrations of 125 I and 131 I were determined in thyroids of road-killed deer showing the highest activities of 125 I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bionindicator for radioiodine around nuclear facilities. 6 refs., 2 figs., 3 tabs

Environmental applications for an intrinsic germanium well detector

International Nuclear Information System (INIS)

Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

1983-01-01

The overall performance of an intrinsic germanium well detector for 125 I measurements was investigated in a program of environmental surveillance. Concentrations of 125 I and 131 I were determined in thyroids of road-killed deer showing the highest activities of 125 I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bioindicator for radioiodine around nuclear facilities. 6 refs., 2 figs., 3 tabs

Value-based purchasing of medical devices.

Science.gov (United States)

Obremskey, William T; Dail, Teresa; Jahangir, A Alex

2012-04-01

Health care in the United States is known for its continued innovation and production of new devices and techniques. While the intention of these devices is to improve the delivery and outcome of patient care, they do not always achieve this goal. As new technologies enter the market, hospitals and physicians must determine which of these new devices to incorporate into practice, and it is important these devices bring value to patient care. We provide a model of a physician-engaged process to decrease cost and increase review of physician preference items. We describe the challenges, implementation, and outcomes of cost reduction and product stabilization of a value-based process for purchasing medical devices at a major academic medical center. We implemented a physician-driven committee that standardized and utilized evidence-based, clinically sound, and financially responsible methods for introducing or consolidating new supplies, devices, and technology for patient care. This committee worked with institutional finance and administrative leaders to accomplish its goals. Utilizing this physician-driven committee, we provided access to new products, standardized some products, decreased costs of physician preference items 11% to 26% across service lines, and achieved savings of greater than $8 million per year. The implementation of a facility-based technology assessment committee that critically evaluates new technology can decrease hospital costs on implants and standardize some product lines.

Ductile-regime turning of germanium and silicon

Science.gov (United States)

Blake, Peter N.; Scattergood, Ronald O.

1989-01-01

Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

Dispersion Properties of Photonic Crystals and Silicon Nanostructures Investigated by Fourier-Space Imaging

OpenAIRE

Jágerská, Jana

2011-01-01

State-of-the-art nanophotonic devices based on semiconductor technology use total internal reflection or the photonic bandgap effect to reduce the waveguide core dimensions down to hundreds of nanometers, ensuring strong optical confinement within the scale of the wavelength. Within the framework of this thesis, we investigate the light propagation in such devices by direct experimental reconstruction of their dispersion relation ω (k), where ω ...

Hall mobility of free charge carriers in highly compensated p-Germanium

International Nuclear Information System (INIS)

Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

2000-01-01

Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

International Nuclear Information System (INIS)

Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

2000-01-01

Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

Astroparticle physics with a customized low-background broad energy Germanium detector

Energy Technology Data Exchange (ETDEWEB)

Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

2011-10-01

The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

Calibration of Single High Purity Germanium Detector for Whole Body Counter

International Nuclear Information System (INIS)

Taha, T.M.; Morsi, T.M.

2009-01-01

A new Accuscan II single germanium detector for whole body counter was installed in NRC (Egypt). The current paper concerned on calibration of single high purity germanium detector for whole body counter. Physical parameters affecting on performance of whole body counter such as linearity, minimum detectable activity and source detector distance, SDD were investigated. Counting efficiencies for the detector have been investigated in rear wall, fixed diagnostic position in air. Counting efficiencies for organ compartments such as thyroid, lung, upper and lower gastrointestinal tract have been investigated using transfer phantom in fixed diagnostic and screening positions respectively. The organ compartment efficiencies in screening geometry were higher than that value of diagnostic geometry by a factor of three. The committed dose equivalents of I-131 in thyroid were ranged from 0.073 ± 0.004 to 1.73±0.09 mSv and in lung was 0.02±0.001 mSv

Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

International Nuclear Information System (INIS)

Vo, D.T.

1998-01-01

Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy

Direct observations of the vacancy and its annealing in germanium

DEFF Research Database (Denmark)

Slotte, J.; Kilpeläinen, S.; Tuomisto, F.

2011-01-01

Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

Topology optimization for nano-photonics

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Sigmund, Ole

2011-01-01

Topology optimization is a computational tool that can be used for the systematic design of photonic crystals, waveguides, resonators, filters and plasmonics. The method was originally developed for mechanical design problems but has within the last six years been applied to a range of photonics...... applications. Topology optimization may be based on finite element and finite difference type modeling methods in both frequency and time domain. The basic idea is that the material density of each element or grid point is a design variable, hence the geometry is parameterized in a pixel-like fashion....... The optimization problem is efficiently solved using mathematical programming-based optimization methods and analytical gradient calculations. The paper reviews the basic procedures behind topology optimization, a large number of applications ranging from photonic crystal design to surface plasmonic devices...

Solution synthesis of germanium nanocrystals

Science.gov (United States)

Gerung, Henry [Albuquerque, NM; Boyle, Timothy J [Kensington, MD; Bunge, Scott D [Cuyahoga Falls, OH

2009-09-22

A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

Substrate structures for InP-based devices

International Nuclear Information System (INIS)

Wanlass, M.W.; Sheldon, P.

1990-01-01

A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

Interconnecting wearable devices with nano-biosensing implants through optical wireless communications

Science.gov (United States)

Johari, Pedram; Pandey, Honey; Jornet, Josep M.

2018-02-01

Major advancements in the fields of electronics, photonics and wireless communication have enabled the development of compact wearable devices, with applications in diverse domains such as fitness, wellness and medicine. In parallel, nanotechnology is enabling the development of miniature sensors that can detect events at the nanoscale with unprecedented accuracy. On this matter, in vivo implantable Surface Plasmon Resonance (SPR) nanosensors have been proposed to analyze circulating biomarkers in body fluids for the early diagnosis of a myriad of diseases, ranging from cardiovascular disorders to different types of cancer. In light of these results, in this paper, an architecture is proposed to bridge the gap between these two apparently disjoint paradigms, namely, the commercial wearable devices and the advanced nano-biosensing technologies. More specifically, this paper thoroughly assesses the feasibility of the wireless optical intercommunications of an SPR-based nanoplasmonic biochip -implanted subcutaneously in the wrist-, with a nanophotonic wearable smart band which is integrated by an array of nano-lasers and photon-detectors for distributed excitation and measurement of the nanoplasmonic biochip. This is done through a link budget analysis which captures the peculiarities of the intra-body optical channel at (sub) cellular level, the strength of the SPR nanosensor reflection, as well as the capabilities of the nanolasers (emission power, spectrum) and the nano photon-detectors (sensitivity and noise equivalent power). The proposed analysis guides the development of practical communication designs between the wearable devices and nano-biosensing implants, which paves the way through early-stage diagnosis of severe diseases.

Thermophysical Properties of Molten Germanium Measured by the High Temperature Electrostatic Levitator

Science.gov (United States)

Rhim, W. K.; Ishikawa, T.

1998-01-01

Thermophysical properties of molten germanium such as the density, the thermal expansion coefficient, the hemisphereical total emissivity, the constant pressure specific heat capacity, the surface tension, and the electrical resistivity have been measured using the High Temperature Electrostatic Levitator at JPL.

Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

DEFF Research Database (Denmark)

Riskaer, Sven

1966-01-01

The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high......-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For n-type germanium we obtain Ξu=18.0±0.5 eV, for n-type silicon Ξu=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally...

Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

Science.gov (United States)

Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

1997-01-01

A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

Light Controlling at Subwavelength Scales in Nanophotonic Systems: Physics and Applications

Science.gov (United States)

Shen, Yuecheng

The capability of controlling light at scales that are much smaller than the operating wave-length enables new optical functionalities, and opens up a wide range of applications. Such a capability is out of the realm of conventional optical approaches. This dissertation aims to explore the light-matter interactions at nanometer scale, and to investigate the novel scien-tific and industrial applications. In particular, we will explain how to detect nanoparticles using an ultra-sensitive nano-sensor; we will also describe a photonic diode which gener-ates a unidirectional flow of single photons; Moreover, in an one-dimensional waveguide QED system where the fermionic degree of freedom is present, we will show that strong photon-photon interactions can be generated through scattering means, leading to photonic bunching and anti-bunching with various applications. Finally, we will introduce a mecha-nism to achieve super-resolution to discern fine features that are orders of magnitude smaller than the illuminating wavelength. These research projects incorporate recent advances in quantum nanophotonics, nanotechnologies, imaging reconstruction techniques, and rigorous numerical simulations.

Comparison of the NaI-CsI phoswich and a hyperpure germanium array for in vivo detection of the actinides

Energy Technology Data Exchange (ETDEWEB)

Berger, C D; Goans, R E [Oak Ridge National Lab., TN (USA)

1981-04-01

An array of hyperpure germanium detectors has recently been employed at ORNL for the identification and quantification of internally deposited actinides. Its advantages over the phoswich detector - the current state-of-the-art for detection of the actinides - were found to be improved background reduction and superior energy resolution. The germanium system and the currently operating phoswich system are discussed and compared. The improvement in performance of the germanium system over the phoswich system (a factor of 2.5 for /sup 239/Pu and 15.3 for /sup 241/Am) appears to justify the financial investment, particularly when /sup 241/Am is used as an indirect means of detection and measurement of /sup 239/Pu.

Graphene-based energy devices

CERN Document Server

Yusoff, A Rashid bin Mohd

2015-01-01

This first book dedicated to the topic provides an up-to-date account of the many opportunities graphene offers for robust, workable energy generation and storage devices. Following a brief overview of the fundamentals of graphene, including the main synthesis techniques, characterization methods and properties, the first part goes on to deal with graphene for energy storage applications, such as lithium-ion batteries, supercapacitors and hydrogen storage. The second part is concerned with graphene-based energy-generation devices, in particular conventional as well as microbial and enzymatic f

Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

Directory of Open Access Journals (Sweden)

Lei Wang

2017-01-01

Full Text Available In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the networks successfully recover the original file. The experimental results show that secure network coding is very feasible and suitable for such file sharing. Moreover, the sharing efficiency and security outperform traditional replication-based sharing scheme.

Neutrino and dark matter physics with sub-keV germanium detectors

Indian Academy of Sciences (India)

2014-11-04

Nov 4, 2014 ... Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor ...

NTD germanium: a novel material for low-temperature bolometers

International Nuclear Information System (INIS)

Haller, E.E.; Palaio, N.P.; Rodder, M.; Hansen, W.L.; Kreysa, E.

1982-06-01

Six samples of ultra-pure (absolute value N/sub A/ - N/sub D/ absolute value less than or equal to 10 11 cm -3 ), single-crystal germanium have been neutron transmutation doped with neutron doses between 7.5 x 10 16 and 1.88 x 10 18 cm -2 . After thermal annealing at 400 0 C for six hours in a pure argon atmosphere, the samples have been characterized with Hall effect and resistivity measurements between 300 and 0.3 K. Our results show that the resistivity in the low temperature, hopping conduction regime can be approximated with rho = rho 0 exp(Δ/T). The three more heavily doped samples show values for rho 0 and Δ ranging from 430 to 3.3 Ω cm and from 4.9 to 2.8 K, respectively. The excellent reproducibility of neutron transmutation doping and the values of rho 0 and Δ make NTD Ge a prime candidate for the fabrication of low temperature, low noise bolometers. The large variation in the tabulated values of the thermal neutron cross sections for the different germanium isotopes makes it clear that accurate measurements of these cross-sections for well defined neutron energy spectra would be highly desirable

Surface passivation of high-purity germanium gamma-ray detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

1993-01-01

The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

Production and separation of no-carrier-added 73As and 75Se from 7Li irradiated germanium oxide target

International Nuclear Information System (INIS)

Mandal, A.; Lahiri, S.

2012-01-01

This work reports for the first time 7 Li-induced accelerator based production of 71,72,73,74 As, 75,76,77 Br and 73,75 Se radionuclides in their no-carrier-added (nca) state. After the decay of all short-lived radionuclides 75 Se and 73 As were only existing radionuclides in germanium oxide target, which were subsequently separated by liquid-liquid extraction (LLX) using trioctylamine (TOA) dissolved in cyclohexane as liquid ion exchanger. The presence of stable germanium in various fractions was examined by Inductively Coupled Plasma Optical Spectrometry (ICP-OES). At 0.1 M TOA and 10 M HCl concentration, 75 Se and stable Ge were extracted into the organic phase leaving 73 As in the aqueous phase. The bulk Ge was stripped back to the aqueous phase by 1 M NaOH, keeping 75 Se in the organic phase. Therefore complete separation between 73 As, 75 Se and bulk Ge was achieved. (orig.)

Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

Energy Technology Data Exchange (ETDEWEB)

Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan)

2015-12-21

The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

Carbon Nanotube Paper-Based Electroanalytical Devices

Directory of Open Access Journals (Sweden)

Youngmi Koo

2016-04-01

Full Text Available Here, we report on carbon nanotube paper-based electroanalytical devices. A highly aligned-carbon nanotube (HA-CNT array, grown using chemical vapor deposition (CVD, was processed to form bi-layered paper with an integrated cellulose-based Origami-chip as the electroanalytical device. We used an inverse-ordered fabrication method from a thick carbon nanotube (CNT sheet to a thin CNT sheet. A 200-layered HA-CNT sheet and a 100-layered HA-CNT sheet are explored as a working electrode. The device was fabricated using the following methods: (1 cellulose-based paper was patterned using a wax printer, (2 electrical connection was made using a silver ink-based circuit printer, and (3 three electrodes were stacked on a 2D Origami cell. Electrochemical behavior was evaluated using electrochemical impedance spectroscopy (EIS and cyclic voltammetry (CV. We believe that this platform could attract a great deal of interest for use in various chemical and biomedical applications.

Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration.

Science.gov (United States)

Meric, Zeynep; Mehringer, Christian; Karpstein, Nicolas; Jank, Michael P M; Peukert, Wolfgang; Frey, Lothar

2015-09-14

In this work we demonstrate the fabrication of germanium nanoparticle (NP) based electronics. The whole process chain from the nanoparticle production up to the point of inverter integration is covered. Ge NPs with a mean diameter of 33 nm and a geometric standard deviation of 1.19 are synthesized in the gas phase by thermal decomposition of GeH4 precursor in a seeded growth process. Dispersions of these particles in ethanol are employed to fabricate thin particulate films (60 to 120 nm in thickness) on substrates with a pre-patterned interdigitated aluminum electrode structure. The effect of temperature treatment, polymethyl methacrylate encapsulation and alumina coating by plasma-assisted atomic layer deposition (employing various temperatures) on the performance of these layers as thin film transistors (TFTs) is investigated. This coating combined with thermal annealing delivers ambipolar TFTs which show an Ion/Ioff ratio in the range of 10(2). We report fabrication of n-type, p-type or ambipolar Ge NP TFTs at maximum temperatures of 450 °C. For the first time, a circuit using two ambipolar TFTs is demonstrated to function as a NOT gate with an inverter gain of up to 4 which can be operated at room temperature in ambient air.

Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

Science.gov (United States)

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Diffusion of tin in germanium: A GGA+U approach

KAUST Repository

Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Schwingenschlö gl, Udo

2011-01-01

Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

Determination of carbon and nitrogen in silicon and germanium

International Nuclear Information System (INIS)

Gebauhr, W.; Martin, J.

1975-01-01

The essential aim of this study is to examine the various technical and economic problems encountered in the determination of carbon and nitrogen in silicon and germanium, for this is in a way an extension of the discussion concerning the presence of oxygen in these two elements. The greater part of the study is aimed at drawing up a catalogue of the methods of analysis used and of the results obtained so far

Diffusion of tin in germanium: A GGA+U approach

KAUST Repository

Tahini, H. A.

2011-10-18

Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

Strain-induced changes to the electronic structure of germanium

KAUST Repository

Tahini, H. A.

2012-04-17

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

Strain-induced changes to the electronic structure of germanium

KAUST Repository

Tahini, H. A.; Chroneos, Alexander I.; Grimes, Robin W.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

2012-01-01

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

Performance and stability tests of bare high purity germanium detectors in liquid argon for the GERDA experiment

Energy Technology Data Exchange (ETDEWEB)

Barnabe Heider, Marik

2009-05-27

GERDA will search for neutrinoless double beta decay of {sup 76}Ge by using a novel approach of bare germanium detectors in liquid argon (LAr). Enriched germanium detectors from the previous Heidelberg-Moscow and IGEX experiments have been reprocessed and will be deployed in GERDA Phase-I. At the center of this thesis project is the study of the performance of bare germanium detectors in cryogenic liquids. Identical detector performance as in vacuum cryostats (2.2 keV FWHM at 1.3 MeV) was achieved in cryogenic liquids with a new low-mass detector assembly and contacts. One major result is the discovery of a radiation induced leakage current (LC) increase when operating bare detectors with standard passivation layers in LAr. Charge collection and build-up on the passivation layer were identified as the origin of the LC increase. It was found that diodes without passivation do not exhibit this feature. Three month-long stable operation in LAr at {proportional_to} 5 pA LC under periodic gamma irradiation demonstrated the suitability of the modi ed detector design. Based on these results, all Phase-I detectors were reprocessed without passivation layer and subsequently successfully characterized in LAr in the GERDA underground Detector Laboratory. The mass loss during the reprocessing was {proportional_to}300 g out of 17.9 kg and the exposure above ground {proportional_to} 5 days. This results in a negligible cosmogenic background increase of {proportional_to} 5.10{sup -4} cts/(keV.kg.y) at {sup 76}Ge Q{sub {beta}}{sub {beta}} for {sup 60}Co and {sup 68}Ge. (orig.)

Violet and visible up-conversion emission in Yb{sup 3+}-Ho{sup 3+} co-doped germanium-borate glasses

Energy Technology Data Exchange (ETDEWEB)

Yang Yanmin, E-mail: mihuyym@163.co [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); Zhang Meixin [Forensic Science Lab, Hebei University, Baoding 071002 (China); Yang Zhiping [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); Fu Zuoling [Key Laboratory of Coherent Light, Atomic and Molecular Spectroscopy, College of physics, Jilin University, Ministry of Education, Changchun 130023 (China)

2010-10-15

The up-conversion emission properties of Yb{sup 3+}-Ho{sup 3+} co-doped germanium-borate glasses have been investigated with 980 nm excitation. The violet, blue, green and red emission bands at about 350, 485, 544 and 653 nm can be identified, respectively. Experimental results indicated that the relative intensity ratios of the peaks I{sub Red}/I{sub Green} increased with increasing B{sub 2}O{sub 3} concentration, which led to changing color of up-conversion emission from green at x=0 to yellow at x=40, to red at x=60. The violet emission at 350 nm was first reported in germanium-borate glass host and up-conversion mechanisms of the emissions were discussed. The Yb{sup 3+}-Ho{sup 3+} co-doped germanium-borate glasses could be an alternative for the generation of violet and primary colors for application in solid-state displays.

Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

OpenAIRE

Wang, Lei; Wang, Qing

2017-01-01

In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D) communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the netw...

Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

Directory of Open Access Journals (Sweden)

Cesar Calleja

2016-01-01

Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

Graphene devices based on laser scribing technology

Science.gov (United States)

Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-04-01

Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

Energy-Based Devices in Treatment of Acne Vulgaris.

Science.gov (United States)

Handler, Marc Z; Bloom, Bradley S; Goldberg, David J

2016-05-01

Acne vulgaris is a chronic dermatologic complaint with a multifactorial cause. Traditionally, antibiotics and retinoids have been used to manage the condition; patient compliance has been an ongoing issue. A variety of energy-based devices have been reported to be effective in the treatment of acne vulgaris. To review and summarize the current literature specific to treatment of acne vulgaris with energy-based devices. A review of the current literature of energy-based devices used for the treatment of acne vulgaris. Although limited randomized controlled trials for the treatment of acne have been performed, significant clinical improvement of acne vulgaris, especially of inflammatory lesions, has been demonstrated with a variety of energy-based devices. Newer approaches may lead to even better results.

Toward flexible polymer and paper-based energy storage devices

Energy Technology Data Exchange (ETDEWEB)

Nyholm, Leif [Department of Materials Chemistry, The Aangstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala (Sweden); Nystroem, Gustav; Mihranyan, Albert; Stroemme, Maria [Nanotechnology and Functional Materials, Department of Engineering Sciences, The Aangstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

2011-09-01

All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Empirical correction of crosstalk in a low-background germanium γ-γ analysis system

International Nuclear Information System (INIS)

Keillor, M.E.; Erikson, L.E.; Aalseth, C.E.; Day, A.R.; Fuller, E.S.; Glasgow, B.D.; Hoppe, E.W.; Hossbach, T.W.; Mizouni, L.K.; Myers, A.W.

2013-01-01

The Pacific Northwest National Laboratory (PNNL) is currently developing a custom software suite capable of automating many of the tasks required to accurately analyze coincident signals within gamma spectrometer arrays. During the course of this work, significant crosstalk was identified in the energy determination for spectra collected with a new low-background intrinsic germanium (HPGe) array at PNNL. The HPGe array is designed for high detection efficiency, ultra-low-background performance, and sensitive γ-γ coincidence detection. The first half of the array, a single cryostat containing seven HPGe crystals, was recently installed into a new shallow underground laboratory facility. This update will present a brief review of the germanium array, describe the observed crosstalk, and present a straight-forward empirical correction that significantly reduces the impact of this crosstalk on the spectroscopic performance of the system. (author)

Remote media vision-based computer input device

Science.gov (United States)

Arabnia, Hamid R.; Chen, Ching-Yi

1991-11-01

In this paper, we introduce a vision-based computer input device which has been built at the University of Georgia. The user of this system gives commands to the computer without touching any physical device. The system receives input through a CCD camera; it is PC- based and is built on top of the DOS operating system. The major components of the input device are: a monitor, an image capturing board, a CCD camera, and some software (developed by use). These are interfaced with a standard PC running under the DOS operating system.

Current experiments in germanium 0 ν β β search -- GERDA and MAJORANA

Science.gov (United States)

von Sturm, K.

2015-01-01

There are unanswered questions regarding neutrino physics that are of great interest for the scientific community. For example the absolute masses, the mass hierarchy and the nature of neutrinos are unknown up to now. The discovery of neutrinoless double beta decay (0νββ) would prove the existence of a Majorana mass, which would be linked to the half-life of the decay, and would in addition provide an elegant solution for the small mass of the neutrinos via the seesaw mechanism. Because of an existing discovery claim of 0νββ of 76Ge and the excellent energy resolution achievable, germanium is of special interest in the search for 0νββ . In this article the state of the art of germanium 0νββ search, namely the GERDA experiment and MAJORANA demonstrator, is presented. In particular, recent results of the GERDA collaboration, which strongly disfavour the above mentioned claim, are discussed.

Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

Directory of Open Access Journals (Sweden)

Saharin Nurul Syazlin Binti

2017-01-01

Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

A Flexible Microcontroller-Based Data Acquisition Device

Directory of Open Access Journals (Sweden)

Darko Hercog

2014-06-01

Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

A flexible microcontroller-based data acquisition device.

Science.gov (United States)

Hercog, Darko; Gergič, Bojan

2014-06-02

This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

Model-based engineering for medical-device software.

Science.gov (United States)

Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

2010-01-01

This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1.

Tensile strain mapping in flat germanium membranes

Energy Technology Data Exchange (ETDEWEB)

Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

2014-04-28

Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

Array of germanium detectors for nuclear safeguards

International Nuclear Information System (INIS)

Moss, C.E.; Bernard, W.; Dowdy, E.J.; Garcia, C.; Lucas, M.C.; Pratt, J.C.

1983-01-01

Our gamma-ray spectrometer system, designed for field use, offers high efficiency and high resolution for safeguards applications. The system consists of three 40% high-purity germanium detectors and a LeCroy 3500 data-acquisition system that calculates a composite spectrum for the three detectors. The LeCroy 3500 mainframe can be operated remotely from the detector array with control exercised through moderns and the telephone system. System performance with a mixed source of 125 Sb, 154 Eu, and 155 Eu confirms the expected efficiency of 120% with an overall resolution that is between the resolution of the best detector and that of the worst

Tensile strain mapping in flat germanium membranes

International Nuclear Information System (INIS)

Rhead, S. D.; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R.; Shah, V. A.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.; Sotomayor Torres, C. M.

2014-01-01

Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge

Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

Science.gov (United States)

Tengku Kamarul Bahri, T. N. H.; Wagiran, H.; Hussin, R.; Saeed, M. A.; Hossain, I.; Ali, H.

2014-10-01

Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5-4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

Progress of Terahertz Devices Based on Graphene

Institute of Scientific and Technical Information of China (English)

Mai-Xia Fu; Yan Zhang

2013-01-01

Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz (THz) optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.

Carbon Based Transistors and Nanoelectronic Devices

Science.gov (United States)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Energy Technology Data Exchange (ETDEWEB)

Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

2013-12-02

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

International Nuclear Information System (INIS)

Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

2013-01-01

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

Modeling open nanophotonic systems using the Fourier modal method: generalization to 3D Cartesian coordinates.

Science.gov (United States)

Häyrynen, Teppo; Osterkryger, Andreas Dyhl; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

2017-09-01

Recently, an open geometry Fourier modal method based on a new combination of an open boundary condition and a non-uniform k-space discretization was introduced for rotationally symmetric structures, providing a more efficient approach for modeling nanowires and micropillar cavities [J. Opt. Soc. Am. A33, 1298 (2016)JOAOD61084-752910.1364/JOSAA.33.001298]. Here, we generalize the approach to three-dimensional (3D) Cartesian coordinates, allowing for the modeling of rectangular geometries in open space. The open boundary condition is a consequence of having an infinite computational domain described using basis functions that expand the whole space. The strength of the method lies in discretizing the Fourier integrals using a non-uniform circular "dartboard" sampling of the Fourier k space. We show that our sampling technique leads to a more accurate description of the continuum of the radiation modes that leak out from the structure. We also compare our approach to conventional discretization with direct and inverse factorization rules commonly used in established Fourier modal methods. We apply our method to a variety of optical waveguide structures and demonstrate that the method leads to a significantly improved convergence, enabling more accurate and efficient modeling of open 3D nanophotonic structures.

Cellphone-based devices for bioanalytical sciences

Science.gov (United States)

Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

2014-01-01

During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

GeMini: The Next Generation Mechanically-Cooled Germanium Spectrometer

International Nuclear Information System (INIS)

Burks, M.

2008-01-01

The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (GErmanium MINIature spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice and surprise inspections where positive nuclide identification of radioactive materials is required. GeMini weighs 2.75 kg (6 lbs) total including the detector, cryostat, cryocooler, batteries, electronics and readout. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Two working prototypes have been built and tested in the lab. The target energy resolution is 3 keV fwhm or better for 1332 keV gamma-rays. The detectors currently achieve around 4.5 keV resolution, which is slightly higher than our goal due to microphonic noise. Our present work focuses on improving the resolution through mechanical and electronic means of reducing the microphonic noise. This paper will focus on the performance of the instrument and its applicability for inspectors in the field

Innovative energy absorbing devices based on composite tubes

Science.gov (United States)

Tiwari, Chandrashekhar

Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and