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Sample records for germanium crystal dimensions

  1. Germanium crystal dimensions and their influences on the observed peak-to-background distributions

    Energy Technology Data Exchange (ETDEWEB)

    Wahl, W. [GSF-Forschungszentrum fuer Umwelt und Gesundheit, Inst. fuer Strahlenschutz, AG-Personendosimetrie, Oberschleissheim (Germany); Koenig, K. [Bundesamt fuer Strahlenschutz, Oberschleissheim (Germany). Inst. fuer Strahlenhygiene

    1997-03-01

    This description applies to the parameters of in vivo and in vitro detection systems as they relate to the type of the detector (or arrangements of detectors) and the performance of the choice. In detail, measurements of a set of pulse-height distributions were done to determine the influence from the detector-crystal dimensions on the peak-to-background variation for point and volume sources as well as ambient radiation. The current capability in suppression of Compton scattered {gamma}-rays using coincidence/anti-coincidence arrangements both for in vivo and in vitro system are presented. Criteria and relations as well as advantages and disadvantages of the applicability are discussed. (orig.)

  2. Single-Crystal Germanium Core Optoelectronic Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Xiaoyu [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA; Page, Ryan L. [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA; Chaudhuri, Subhasis [Department of Chemistry, Pennsylvania State University, University Park PA 16802 USA; Liu, Wenjun [Advanced Photon Source, Argonne National Laboratory, Argonne IL 60439 USA; Yu, Shih-Ying [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA; Mohney, Suzanne E. [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA; Badding, John V. [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA; Department of Chemistry, Pennsylvania State University, University Park PA 16802 USA; Department of Physics, Pennsylvania State University, University Park PA 16802 USA; Gopalan, Venkatraman [Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park PA 16802 USA

    2016-09-19

    Synthesis and fabrication of high-quality, small-core single-crystal germanium fibers that are photosensitive at the near-infrared and have low optical losses ≈1 dB cm-1 at 2 μm are reported. These fibers have potential applications in fiber-based spectroscopic imaging, nonlinear optical devices, and photodetection at the telecommunication wavelengths.

  3. High-purity germanium crystal growing

    International Nuclear Information System (INIS)

    Hansen, W.L.; Haller, E.E.

    1982-10-01

    The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10 10 cm - 3 and be essentially free of charge trapping defects. Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions. The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers

  4. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  5. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  6. High-frequency electromagnetic radiation of germanium crystals in magnetic fields

    Directory of Open Access Journals (Sweden)

    G.V. Milenin

    2017-07-01

    Full Text Available The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with semiconductor, has been experimentally confirmed.

  7. Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

    CERN Document Server

    Kuleev, I G

    2001-01-01

    The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

  8. Growth of poly-crystalline silicon–germanium on silicon by aluminum-induced crystallization

    International Nuclear Information System (INIS)

    Lin, Jian-Yang; Chang, Pai-Yu

    2012-01-01

    The formation of poly-crystalline silicon–germanium films on single-crystalline silicon substrates by the method of aluminum-induced crystallization was investigated. The aluminum and germanium films were evaporated onto the single-crystalline silicon substrate to form an amorphous-germanium/aluminum/single-crystalline silicon structure that was annealed at 450 °C–550 °C for 0–3 h. The structural properties of the films were examined using x-ray diffraction, Raman spectroscopy and Auger electron spectroscopy. The x-ray diffraction patterns confirmed that the initial transition from an amorphous to a poly-crystalline structure occurs after 20 min of aluminum-induced crystallization annealing process at 450 °C. The micro-Raman spectral analysis showed that the aluminum-induced crystallization process yields a better poly-crystalline SiGe film when the film is annealed at 450 °C for 40 min. The growth mechanism of the poly-crystalline silicon–germanium by aluminum-induced crystallization was also studied and is discussed. - Highlights: ► Aluminum-induced poly-SiGe growth on Si substrates has been studied. ► Initial transition from a-SiGe to poly-SiGe occurs after 20-min AIC at 450 °C. ► Free Ge and Si atoms undergo inter-diffusion during AIC.

  9. Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures

    Science.gov (United States)

    Piro, M.-C.; Broniatowski, A.; Marnieros, S.; Dumoulin, L.; Olivieri, E.

    2014-09-01

    A new set of experimental data is presented for the mean drift lengths and the drift velocities of hot electrons and holes as a function of the electric field in ultra-pure and in lightly doped (n- and p-type) germanium single crystals at mK temperatures. Measurements are made in the field range between 0.1 and 15 V/cm, typical for the operation of cryogenic germanium detectors for dark matter search. The analysis of the experimental data strongly suggests that the dominant trapping centers are the dopant species in the neutral state.

  10. Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

    Science.gov (United States)

    Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

    2017-12-01

    Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

  11. Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, Robert [Stanford Univ., CA (United States)

    2016-03-01

    In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Our measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.

  12. Study of the creep of germanium bi-crystals by X ray topography and electronic microscopy

    International Nuclear Information System (INIS)

    Gay, Marie-Odile

    1981-01-01

    This research thesis addresses the study of the microscopic as well as macroscopic aspect of the role of grain boundary during deformation, by studying the creep of Germanium bi-crystals. The objective was to observe interactions of network dislocations with the boundary as well as the evolution of dislocations in each grain. During the first stages of deformation, samples have been examined by X ray topography, a technique which suits well the observation of low deformed samples, provided their initial dislocation density is very low. At higher deformation, more conventional techniques of observation of sliding systems and electronic microscopy have been used. After some general recalls, the definition of twin boundaries and of their structure in terms of dislocation, a look at germanium deformation, and an overview of works performed on bi-crystals deformation, the author presents the experimental methods and apparatuses. He reports and discusses the obtained results at the beginning of deformation as well as during next phases

  13. CCDC 1416891: Experimental Crystal Structure Determination : Methyl-triphenyl-germanium

    KAUST Repository

    Bernatowicz, Piotr

    2015-01-01

    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  14. Bridgman Growth of Germanium and Germanium-Silicon Crystals under Microgravity

    Science.gov (United States)

    Croell, A.; Hess, A.; Zaehringer, J.; Sorgenfrei, T.; Egorov, A.; Senchenkov, A.; Mazuruk, K.; Volz, M.

    2016-01-01

    Four different Bridgman growth experiments on Ge:Ga and Ge(sub x)Si(sub 1-x) were performed under microgravity during the FOTON M4 flight in fall 2014 as joint German-Russian experiments. The experiments were also part of the RDGS/ICESAGE project(s) of ESA/NASA on detached growth of Ge and Ge-Si. Three experiments on Ge:Ga investigated different heat and mass transport regimes, i.e. mostly diffusive conditions, flows driven by a rotating magnetic field, and flows driven by vibration. The fourth experiment on Ge(sub 0.98)Si(0.02) investigated detached growth. All four experiments were successful and yielded crystals. Both the Ge-Si experiment and two of the Ge:Ga experiments showed stable detachment from the ampoule wall, although this was not planned for the latter two experiments. The influence of the rotating magnetic field as well as of the vibration was pronounced in the case of the microgram experiments, but dominated by buoyancy convection under 1g.

  15. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    Directory of Open Access Journals (Sweden)

    S. Bellucci

    2016-12-01

    Full Text Available The paper is devoted to the investigation of volume reflection and channeling processes of ultrarelativistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of the Hartree-Fock method and the correct choice of the Debye temperature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the universal form of equations for volume reflection presented in the paper gives a true description of the process at a wide range of particle energies. Standing on this study we make predictions for the mean angle reflection (as a function of the bending radius of positive and negative particles for germanium (110 and (111 crystallographic planes.

  16. Formation and annealing of radiation defects in tin-doped p-type germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Litvinov, V. V., E-mail: aif-minsk@ibb.by; Petukh, A. N.; Pokotilo, Ju. M. [Belarussian State University (Belarus); Markevich, V. P.; Lastovskii, S. B. [National Academy of Sciences of Belarus, Scientific and Practical Materials Research Center (Belarus)

    2012-05-15

    The effect of tin on the formation and annealing of radiation defects in p-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes SnV with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30-75 Degree-Sign C. Annealing of irradiated crystals at temperatures in the range 110-150 Degree-Sign C brings about the formation of deep-level centers with a donor level at E{sub v} + 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.

  17. Monte Carlo modelling of germanium crystals that are tilted and have rounded front edges

    Energy Technology Data Exchange (ETDEWEB)

    Gasparro, Joel [EC-JRC-IRMM, Institute for Reference Materials and Measurements, Retieseweg 111, B-2440 Geel (Belgium); Hult, Mikael [EC-JRC-IRMM, Institute for Reference Materials and Measurements, Retieseweg 111, B-2440 Geel (Belgium)], E-mail: mikael.hult@ec.europa.eu; Johnston, Peter N. [Applied Physics, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001 (Australia); Tagziria, Hamid [EC-JRC-IPSC, Institute for the Protection and the Security of the Citizen, Via E. Fermi 1, I-21020 Ispra (Vatican City State, Holy See,) (Italy)

    2008-09-01

    Gamma-ray detection efficiencies and cascade summing effects in germanium detectors are often calculated using Monte Carlo codes based on a computer model of the detection system. Such a model can never fully replicate reality and it is important to understand how various parameters affect the results. This work concentrates on quantifying two issues, namely (i) the effect of having a Ge-crystal that is tilted inside the cryostat and (ii) the effect of having a model of a Ge-crystal with rounded edges (bulletization). The effect of the tilting is very small (in the order of per mille) when the tilting angles are within a realistic range. The effect of the rounded edges is, however, relatively large (5-10% or higher) particularly for gamma-ray energies below 100 keV.

  18. Monte Carlo modelling of germanium crystals that are tilted and have rounded front edges

    International Nuclear Information System (INIS)

    Gasparro, Joel; Hult, Mikael; Johnston, Peter N.; Tagziria, Hamid

    2008-01-01

    Gamma-ray detection efficiencies and cascade summing effects in germanium detectors are often calculated using Monte Carlo codes based on a computer model of the detection system. Such a model can never fully replicate reality and it is important to understand how various parameters affect the results. This work concentrates on quantifying two issues, namely (i) the effect of having a Ge-crystal that is tilted inside the cryostat and (ii) the effect of having a model of a Ge-crystal with rounded edges (bulletization). The effect of the tilting is very small (in the order of per mille) when the tilting angles are within a realistic range. The effect of the rounded edges is, however, relatively large (5-10% or higher) particularly for gamma-ray energies below 100 keV

  19. Microwave Crystallization of Lithium Aluminum Germanium Phosphate Solid-State Electrolyte

    Directory of Open Access Journals (Sweden)

    Morsi M. Mahmoud

    2016-06-01

    Full Text Available Lithium aluminum germanium phosphate (LAGP glass-ceramics are considered as promising solid-state electrolytes for Li-ion batteries. LAGP glass was prepared via the regular conventional melt-quenching method. Thermal, chemical analyses and X-ray diffraction (XRD were performed to characterize the prepared glass. The crystallization of the prepared LAGP glass was done using conventional heating and high frequency microwave (MW processing. Thirty GHz microwave (MW processing setup were used to convert the prepared LAGP glass into glass-ceramics and compared with the conventionally crystallized LAGP glass-ceramics that were heat-treated in an electric conventional furnace. The ionic conductivities of the LAGP samples obtained from the two different routes were measured using impedance spectroscopy. These samples were also characterized using XRD and scanning electron microscopy (SEM. Microwave processing was successfully used to crystallize LAGP glass into glass-ceramic without the aid of susceptors. The MW treated sample showed higher total, grains and grain boundary ionic conductivities values, lower activation energy and relatively larger-grained microstructure with less porosity compared to the corresponding conventionally treated sample at the same optimized heat-treatment conditions. The enhanced total, grains and grain boundary ionic conductivities values along with the reduced activation energy that were observed in the MW treated sample was considered as an experimental evidence for the existence of the microwave effect in LAGP crystallization process. MW processing is a promising candidate technology for the production of solid-state electrolytes for Li-ion battery.

  20. Dimension changing phase transitions in instanton crystals

    International Nuclear Information System (INIS)

    Kaplunovsky, Vadim; Sonnenschein, Jacob

    2014-01-01

    We investigate lattices of instantons and the dimension-changing transitions between them. Our ultimate goal is the 3D→4D transition, which is holographically dual to the phase transition between the baryonic and the quarkyonic phases of cold nuclear matter. However, in this paper (just as in http://dx.doi.org/10.1007/JHEP11(2012)047) we focus on lower dimensions — the 1D lattice of instantons in a harmonic potential V∝M 2 2 x 2 2 +M 3 2 x 2 2 +M 4 2 x 4 2 , and the zigzag-shaped lattice as a first stage of the 1D→2D transition. We prove that in the low- and moderate-density regimes, interactions between the instantons are dominated by two-body forces. This drastically simplifies finding the ground state of the instantons’ orientations, so we made a numeric scan of the whole orientation space instead of assuming any particular ansatz. We find that depending on the M 2 /M 3 /M 4 ratios, the ground state of instanton orientations can follow a wide variety of patterns. For the straight 1D lattices, we found orientations periodically running over elements of a ℤ 2 , Klein, prismatic, or dihedral subgroup of the SU(2)/ℤ 2 , as well as irrational but link-periodic patterns. For the zigzag-shaped lattices, we detected 4 distinct orientation phases — the anti-ferromagnet, another abelian phase, and two non-abelian phases. Allowing the zigzag amplitude to vary as a function of increasing compression force, we obtained the phase diagrams for the straight and zigzag-shaped lattices in the (force,M 3 /M 4 ), (chemical potential,M 3 /M 4 ), and (density,M 3 /M 4 ) planes. Some of the transitions between these phases are second-order while others are first-order. Our techniques can be applied to other types of non-abelian crystals

  1. Thermal node of the growth vessel of apparatus of large-sized crystals of germanium growing by the immersible pivoted shaper method

    International Nuclear Information System (INIS)

    Bogomaz, A.V.; Krytskaja, T.V.; Karpenko, A.V.

    2013-01-01

    The construction of a thermal knot of the growth vessel of apparatus of large-sized crystals of germanium growing by the immersible pivoted shaper method is developed and tested. In a construction as a bowl material carbon and carbon-carbon composite bodied by pyrolytic carbon are used. Series of advantages of bowls from carbon-carbon composite material in the part of assurance of the given allocation of temperature on a surface of a bowl, heightening of a mechanical strength and fraction soot impurities lowering in a crystal is fixed. In experimental-industrial conditions crystals of germanium in diameter to 420 mm with high optical characteristic are received

  2. A method of deciding ubiety and dimensions of crystals in double-crystal monochromator

    International Nuclear Information System (INIS)

    Yao Jing; Cao Chongzhen; Gao Xueguan; Ma Peisun

    2005-01-01

    The principle of the T-shaped exit fixed mechanism of the exit beam and entrance one in the double-crystal monochromator is introduced, and requirements of deciding the ubiety and dimensions of two crystals are analyzed. According to these requirements, a method of deciding the ubiety and dimensions of two crystals based on the T-shaped exit fixed mechanism is put forward. The method can not only satisfy the working requirements of double-crystal monochromator, but also optimize the length of two crystals; moreover, it can eliminate the position error when fine adjusting the second crystal. The advantage of the method is testified by giving an example in the end. (authors)

  3. Electrostatic energies of crystals in space of arbitrary dimension

    International Nuclear Information System (INIS)

    Takemoto, Hiroki; Tohsaki, Akihiro

    2005-01-01

    We present a new method to evaluate electrostatic energies under periodic boundary conditions. The lattice sum of Coulomb potentials is expressed through the elliptic Q function of the third kind. This enables us to evaluate electrostatic energies of ionic crystals very accurately and with very rapid convergence. In particular, we study the dimensionality of the electrostatic energies of NaCl-type and CsCl-type crystals, whose expressions are functions of the spatial dimension treated as a real number. Furthermore, the expressions we obtain are applicable to computational simulations using molecular dynamics and Monte Carlo methods. We generate random distributions of point charges under periodic boundary conditions, and we analyze the randomness and its anisotropy on the basis of potential distributions. (author)

  4. Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory.

    Science.gov (United States)

    Wu, Weihua; Zhao, Zihan; Shen, Bo; Zhai, Jiwei; Song, Sannian; Song, Zhitang

    2018-04-19

    Amorphous Ge8Sb92 thin films with various thicknesses were deposited by magnetron sputtering. The crystallization kinetics and optical properties of the Ge8Sb92 thin films and related scaling effects were investigated by an in situ thermally induced method and an optical technique. With a decrease in film thickness, the crystallization temperature, crystallization activation energy and data retention ability increased significantly. The changed crystallization behavior may be ascribed to the smaller grain size and larger surface-to-volume ratio as the film thickness decreased. Regardless of whether the state was amorphous or crystalline, the film resistance increased remarkably as the film thickness decreased to 3 nm. The optical band gap calculated from the reflection spectra increases distinctly with a reduction in film thickness. X-ray diffraction patterns confirm that the scaling of the Ge8Sb92 thin film can inhibit the crystallization process and reduce the grain size. The values of exponent indices that were obtained indicate that the crystallization mechanism experiences a series of changes with scaling of the film thickness. The crystallization time was estimated to determine the scaling effect on the phase change speed. The scaling effect on the electrical switching performance of a phase change memory cell was also determined. The current-voltage and resistance-voltage characteristics indicate that phase change memory cells based on a thinner Ge8Sb92 film will exhibit a higher threshold voltage, lower RESET operational voltage and greater pulse width, which implies higher thermal stability, lower power consumption and relatively lower switching velocity.

  5. High Miller-index germanium crystals for high-energy x-ray imaging applications.

    Science.gov (United States)

    Koch, J A; Lee, J J; Haugh, M J

    2015-12-01

    Near-normal-incidence bent crystals are widely used for x-ray imaging applications. Advantages include high collection solid angle and potentially high efficiency for narrow-band sources, while disadvantages include relatively large (several Å) interatomic spacings and a limited number of suitable matches between a crystal 2d value and an integral multiple of useful emission line wavelengths. The disadvantages become more significant at x-ray energies >10  keV. The former disadvantage can be mitigated by using high-order reflections from crystal planes having low Miller indices, but both disadvantages can be mitigated by using low-order reflections from crystal planes having high Miller indices. We report here on integrated reflectivity measurements we performed of Ge (15,7,7) (2d=0.6296  Å), a candidate for imaging Ru He-α (θ(B)=87°). We find good agreement with calculations, and the data show a multitude of closely spaced reflections with slightly different Bragg angles including a fifth-order reflection of Ge (3,1,1) that has comparable reflectivity. This demonstrates that arbitrary choices of Miller indices in Ge crystals can be used to fine-tune Bragg angles for near-normal-incidence x-ray imaging at tens of kiloelectron volt x-ray energies with minimal lower-energy contamination from lower-order reflections, and that existing calculational tools can be used to reliably estimate integrated reflectivity.

  6. New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

    Science.gov (United States)

    Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

    2017-10-01

    Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.

  7. A facility for plastic deformation of germanium single-crystal wafers

    DEFF Research Database (Denmark)

    Lebech, B.; Theodor, K.; Breiting, B.

    1998-01-01

    . All movements and temperature changes are done by a robot via a PLC-control system. Two nine-crystal focusing monochromators (54 x 116 and 70 x 116 mm(2)) made from 100 wafers with average mosaicity similar to 13' have been constructed. Summaries of the test results are presented. (C) 1998 Elsevier...

  8. Temperature-dependent ordering phenomena in single crystals of germanium antimony tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Urban, Philipp [Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststr. 20, 04275 Leipzig (Germany); Schneider, Matthias N. [Department of Chemistry, LMU Munich, Butenandtstr. 5-13 (D), 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststr. 20, 04275 Leipzig (Germany)

    2015-07-15

    The temperature-dependent behavior of quenched single-crystalline (GeTe){sub n}Sb{sub 2}Te{sub 3} (n~2.8, n~5 and n~11) was investigated by semiquantitative modeling of diffuse X-ray scattering. The structure at room temperature exhibits trigonal twin domains, each comprising a stacking-disordered sequence of distorted rocksalt-type slabs with variable thicknesses. Ge and Sb share the cation position and vacancies are partially ordered in defect layers (van der Waals gaps) between the slabs. The average structure determined with resonant diffraction data corresponds to a rocksalt-type structure whose cation position is split along the stacking direction. Upon heating, cation ordering leads to a metastable superstructure of the rocksalt type at ~400 °C, which transforms to a rocksalt-type high-temperature phase with randomly distributed cations and vacancies at ~500 °C; this structure was also refined using resonant diffraction. Cooling at high or intermediate rates does not yield the long-range ordered phase, but directly leads to the twinned disordered phase. - Graphical abstract: Development of the diffraction patterns of (GeTe){sub ~11}Sb{sub 2}Te{sub 3} upon heating; the insets symbolically sketch the real structure at the corresponding temperatures. - Highlights: • The structure of disordered (GeTe){sub n}Sb{sub 2}Te{sub 3} is described as a function of temperature. • Structural changes are tracked by modeling diffuse X-ray scattering. • Quenched crystals exhibit distorted NaCl-type slabs with different thicknesses. • Vacancy ordering upon heating leads to a metastable superstructure of the NaCl type. • Further heating leads to an undistorted disordered NaCl-type high-temperature phase.

  9. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  10. Effects of electronically neutral impurities on muonium in germanium

    International Nuclear Information System (INIS)

    Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S.; Brewer, J.H.

    1983-04-01

    Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium

  11. Zone refining high-purity germanium

    International Nuclear Information System (INIS)

    Hubbard, G.S.; Haller, E.E.; Hansen, W.L.

    1977-10-01

    The effects of various parameters on germanium purification by zone refining have been examined. These parameters include the germanium container and container coatings, ambient gas and other operating conditions. Four methods of refining are presented which reproducibly yield 3.5 kg germanium ingots from which high purity (vertical barN/sub A/ - N/sub D/vertical bar less than or equal to2 x 10 10 cm -3 ) single crystals can be grown. A qualitative model involving binary and ternary complexes of Si, O, B, and Al is shown to account for the behavior of impurities at these low concentrations

  12. Transfer Matrix for Obliquely Incident Electromagnetic Waves Propagating in One Dimension Plasma Photonic Crystals

    International Nuclear Information System (INIS)

    Guo Bin

    2009-01-01

    Based on the electromagnetic theory and by using an analytical technique-the transfer matrix method, the obliquely incident electromagnetic waves propagating in one-dimension plasma photonic crystals is studied. The dispersion relations for both the P-polarization waves and S-polarization waves, depending on the plasma density, plasma thickness and period, are discussed. (basic plasma phenomena)

  13. Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

    Science.gov (United States)

    Tavakoli, Mohammad Hossein; Renani, Elahe Kabiri; Honarmandnia, Mohtaram; Ezheiyan, Mahdi

    2018-02-01

    In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

  14. Solution of kinetic equation by means of the moments method for phonon thermoconductivity and effect of isotopic disorder on it in the case of germanium and silicon crystals at T = 300 K

    CERN Document Server

    Zhernov, A P

    2001-01-01

    The problem on solving the kinetic equation through the moments method for the dielectric and semiconductor thermal conductivity is discussed. The evaluations of the isotopic disorder effect on the germanium crystals heat resistance in the multimoment approximation are obtained on the basis of the microscopic models. The contributions of the acoustic and optical phonons to the thermal conductivity are accounted for. The DELTA W surplus heat resistance in comparison with highly-enriched samples was determined for the natural composition samples. Good agreement between the theory and experiment for DELTA W is observed in the case of germanium. The theoretical value in the case of silicon is essentially lower as compared to the DELTA W experimental value

  15. Hafnium germanium telluride

    Science.gov (United States)

    Jang, Gyung-Joo; Yun, Hoseop

    2008-01-01

    The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetra­hedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. PMID:21202163

  16. Hafnium germanium telluride

    Directory of Open Access Journals (Sweden)

    Hoseop Yun

    2008-05-01

    Full Text Available The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps.

  17. Photon multiplicity in the hard radiation of 150 GeV electrons in an aligned germanium crystal

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.B.; Sun, C.R.

    1988-01-01

    Mean values m of photon multiplicity in the radiation of 150 GeV electrons directed at and near the axis of a 0.185 mm thick Ge crystal cooled to 100 K have been deduced from the measurements of pair conversion probabilities. Depending on the distribution of multiplicity assumed, values of m ranging from 3.8 to 4.3 are obtained for the previously reported anomalous radiation peak. (orig.)

  18. [Respective determination of inorganic germanium and germanium-132 in foods].

    Science.gov (United States)

    Chen, Q; Yang, H

    1998-02-01

    Inorganic germanium and carboxyethyl germanium sesquioxide (germanium-132) in health drinks were respectively determined by hydride generation-atomic fluorescence spectrometry (HG-AFS). The conditions of respective determination of inorganic germanium and germanium-132 in natural foods were preliminarily discussed.

  19. Dual gauge field theory of quantum liquid crystals in two dimensions

    Science.gov (United States)

    Beekman, Aron J.; Nissinen, Jaakko; Wu, Kai; Liu, Ke; Slager, Robert-Jan; Nussinov, Zohar; Cvetkovic, Vladimir; Zaanen, Jan

    2017-04-01

    We present a self-contained review of the theory of dislocation-mediated quantum melting at zero temperature in two spatial dimensions. The theory describes the liquid-crystalline phases with spatial symmetries in between a quantum crystalline solid and an isotropic superfluid: quantum nematics and smectics. It is based on an Abelian-Higgs-type duality mapping of phonons onto gauge bosons (;stress photons;), which encode for the capacity of the crystal to propagate stresses. Dislocations and disclinations, the topological defects of the crystal, are sources for the gauge fields and the melting of the crystal can be understood as the proliferation (condensation) of these defects, giving rise to the Anderson-Higgs mechanism on the dual side. For the liquid crystal phases, the shear sector of the gauge bosons becomes massive signaling that shear rigidity is lost. After providing the necessary background knowledge, including the order parameter theory of two-dimensional quantum liquid crystals and the dual theory of stress gauge bosons in bosonic crystals, the theory of melting is developed step-by-step via the disorder theory of dislocation-mediated melting. Resting on symmetry principles, we derive the phenomenological imaginary time actions of quantum nematics and smectics and analyze the full spectrum of collective modes. The quantum nematic is a superfluid having a true rotational Goldstone mode due to rotational symmetry breaking, and the origin of this 'deconfined' mode is traced back to the crystalline phase. The two-dimensional quantum smectic turns out to be a dizzyingly anisotropic phase with the collective modes interpolating between the solid and nematic in a non-trivial way. We also consider electrically charged bosonic crystals and liquid crystals, and carefully analyze the electromagnetic response of the quantum liquid crystal phases. In particular, the quantum nematic is a real superconductor and shows the Meissner effect. Their special properties

  20. Hazard assessment of germanium supplements.

    Science.gov (United States)

    Tao, S H; Bolger, P M

    1997-06-01

    Germanium-containing dietary supplements became popular in the 1970s in Japan and later in other countries, as elixirs for certain diseases (e.g., cancer and AIDS). Germanium is not an essential element. Its acute toxicity is low. However, at least 31 reported human cases linked prolonged intake of germanium products with renal failure and even death. Signs of kidney dysfunction, kidney tubular degeneration, and germanium accumulation were observed. Other adverse effects were anemia, muscle weakness, and peripheral neuropathy. Recovery of renal function is slow and incomplete even long after germanium intake was stopped. The total dose of ingested germanium (as dioxide, carboxyethyl germanium sesquioxide, germanium-lactate-citrate, or unspecified forms) varied from 15 to over 300 g; the exposure duration varied from 2 to 36 months. In laboratory animals, elevated germanium in tissues and impaired kidney and liver function were observed in a life-time drinking water (5 ppm germanium) study. Other toxicities associated with ingested germanium products in human cases were also demonstrated in animal studies with germanium dioxide and sometimes other germanium compounds. Based on the evidence of persistent renal toxicity associated with germanium dioxide, the lack of conclusive findings of differential nephrotoxicity of organic germanium compounds, and the possibility of contamination of the organic germanium products with inorganic germanium, it is clear that germanium products present a potential human health hazard.

  1. Electronic states of germanium grown under micro-gravity condition

    Energy Technology Data Exchange (ETDEWEB)

    Sugahara, A. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)]. E-mail: sugahara@tsurugi.phys.sci.osaka-u.ac.jp; Ogawa, T. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fujii, K. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Ohyama, T. [Liberal Arts, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8505 (Japan); Nakata, J. [Kyoto Semiconductor Corp. 418-9 Yodo Saime-cho, Fushimi-ku, Kyoto 613-0915 (Japan)

    2006-04-01

    Magneto-optical absorption measurements of Sb-doped germaniums grown under micro-gravity condition were carried out to investigate the influence of the gravity on crystal growth, using far-infrared laser and microwave. For comparison, we prepared two germanium crystals grown in the same conditions except the gravity conditions. In spite of the quite short growth period, the germanium grown under micro-gravity has a quite good quality. The lineshape analysis of Zeeman absorption peaks due to donor electrons indicates the existence of residual thermal acceptors.

  2. GRAN SASSO: Enriched germanium in action

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    Two large crystals of carefully enriched germanium, one weighing 1 kilogram and the other 2.9 kilograms, and worth many millions of dollars, are being carefully monitored in the Italian Gran Sasso Laboratory in the continuing search for neutrinoless double beta decay

  3. MAJORANA Collaboration's Experience with Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Mertens, S. [Lawrence Berkeley National Laboratory (LBNL); Abgrall, N. [Lawrence Berkeley National Laboratory (LBNL); Avignone, III, F. T. [University of South Carolina/Oak Ridge National Laboratory (ORNL); Barabash, A.S. [Institute of Theoretical & Experimental Physics (ITEP), Moscow, Russia; Bertrand, F. E. [Oak Ridge National Laboratory (ORNL); Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Galindo-Uribarri, A [Oak Ridge National Laboratory (ORNL); Radford, D. C. [Oak Ridge National Laboratory (ORNL); Romero-Romero, E. [UTK/ORNL; Varner, R. L. [Oak Ridge National Laboratory (ORNL); White, B. R. [Oak Ridge National Laboratory (ORNL); Wilkerson, J. F. [UNC/Triangle Univ. Nucl. Lab, Durham, NC/ORNL; Yu, C.-H. [Oak Ridge National Laboratory (ORNL); Majorana, [MAJORANA Collaboration

    2015-01-01

    The goal of the Majorana Demonstrator project is to search for 0v beta beta decay in Ge-76. Of all candidate isotopes for 0v beta beta, Ge-76 has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0v beta beta, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC (R)(R). The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  4. Crystallization in melts of short, semiflexible hard polymer chains: An interplay of entropies and dimensions

    Science.gov (United States)

    Shakirov, T.; Paul, W.

    2018-04-01

    What is the thermodynamic driving force for the crystallization of melts of semiflexible polymers? We try to answer this question by employing stochastic approximation Monte Carlo simulations to obtain the complete thermodynamic equilibrium information for a melt of short, semiflexible polymer chains with purely repulsive nonbonded interactions. The thermodynamics is obtained based on the density of states of our coarse-grained model, which varies by up to 5600 orders of magnitude. We show that our polymer melt undergoes a first-order crystallization transition upon increasing the chain stiffness at fixed density. This crystallization can be understood by the interplay of the maximization of different entropy contributions in different spatial dimensions. At sufficient stiffness and density, the three-dimensional orientational interactions drive the orientational ordering transition, which is accompanied by a two-dimensional translational ordering transition in the plane perpendicular to the chains resulting in a hexagonal crystal structure. While the three-dimensional ordering can be understood in terms of Onsager theory, the two-dimensional transition can be understood in terms of the liquid-hexatic transition of hard disks. Due to the domination of lateral two-dimensional translational entropy over the one-dimensional translational entropy connected with columnar displacements, the chains form a lamellar phase. Based on this physical understanding, orientational ordering and translational ordering should be separable for polymer melts. A phenomenological theory based on this understanding predicts a qualitative phase diagram as a function of volume fraction and stiffness in good agreement with results from the literature.

  5. The germination of germanium

    Science.gov (United States)

    Burdette, Shawn C.; Thornton, Brett F.

    2018-02-01

    Shawn C. Burdette and Brett F. Thornton explore how germanium developed from a missing element in Mendeleev's periodic table to an enabler for the information age, while retaining a nomenclature oddity.

  6. Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

    International Nuclear Information System (INIS)

    Hansen, W.L.; Haller, E.E.

    1976-10-01

    Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

  7. Localisation of spin orbit coupling in silicon-germanium alloys

    International Nuclear Information System (INIS)

    Vincent, J.K.

    2002-01-01

    The validity of the standard method of treating silicon-germanium alloy systems - the virtual crystal approximation - is studied. The largest difference between the properties of silicon and germanium is the Γ-point spin orbit coupling (0.04 eV in silicon and 0.29 eV in germanium). As the spin orbit potential is delta function like it might be expected that simply smearing out the potential to an average in the alloy is not appropriate. Calculations using k · p theory and the Empirical Pseudopotential method are performed to compare the density of states, bandstructure and dielectric function of supercell based silicon-germanium alloys with an averaged out (virtual crystal) spin orbit coupling potential and with the situation when the potential is localised at the germanium sites. In general it was found that the virtual crystal approximation holds for silicon-germanium as the localisation of the spin orbit potential caused only small changes in the energy levels of the system. However the effect would become potentially significant for a larger difference in the spin orbit coupling of the two alloyed materials. (author)

  8. Synthesis and characterization of germanium monosulphide (GeS)

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  9. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  10. Front End Spectroscopy ASIC for Germanium Detectors

    Science.gov (United States)

    Wulf, Eric

    the anode and cathode of the device to allow the depth of the interaction within the crystal to be determined. Dr. De Geronimo has developed similar timing circuits for CZT detector ASICs. Furthermore, the timing circuitry of the ASIC is at the very end of the analog section, simplifying and mitigating risks in the redesign. In the first year, we propose to tweak the gain settings and to add timing to the silicon ASIC to match the requirements of a germanium detector. The design specifications of the ASIC will include advice from our collaborators Dr. Boggs from COSI and Dr. Shih from GRIPS. By using a master ASIC designer to integrate his proven front-end and back-end with only minor modifications, we are maximizing the probability of success. NRL has a commercial cross-strip germanium detector with 30 pF of capacitance per strip, including the flex circuit from the detector to the outside of the cryostat. The COSI and GRIPS detectors have a similar capacitance per strip on the outside of their mechanically cooled cryostat. The second year of the program will be devoted to testing the newly fabricated germanium cross-strip ASIC with the NRL germanium detector. At the end of the second year, NASA will have a TRL 5 ASIC for germanium detectors, allowing future missions, including COSI, GRX, and GRIPS, to operate within their thermal and electrical envelopes. At the end of the third year, a detector on COSI will be instrumented with the new ASIC allowing for a TRL 6 demonstration during the following COSI balloon flight.

  11. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    Science.gov (United States)

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  12. CCDC 939502: Experimental Crystal Structure Determination : catena-[hexadecakis(N,N-Dicyclohexyl-N-ethyl-N-methylammonium) icosahectakis(mu2-oxo)-hexapentaconta(germanium-silicon)

    KAUST Repository

    Yu, Zheng-Bao

    2013-01-01

    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  13. CCDC 1047858: Experimental Crystal Structure Determination : catena-[propane-1,3-diaminium tetrakis(mu-selenido)-germanium-manganese tetrahydropyrimidin-2(1H)-one solvate

    KAUST Repository

    Zhang, Guodong

    2015-01-01

    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  14. Germanium and indium

    Science.gov (United States)

    Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

  15. Characterisation of a Broad Energy Germanium (BEGe) detector

    Energy Technology Data Exchange (ETDEWEB)

    Barrientos, D., E-mail: diego_barrientos@usal.es [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Boston, A.J.; Boston, H.C. [Nuclear Physics Group, University of Liverpool (United Kingdom); Quintana, B.; Sagrado, I.C. [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Unsworth, C.; Moon, S.; Cresswell, J.R. [Nuclear Physics Group, University of Liverpool (United Kingdom)

    2011-08-21

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of {sup 241}Am, {sup 22}Na and {sup 137}Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  16. Calibration of germanium detectors

    International Nuclear Information System (INIS)

    Bjurman, B.; Erlandsson, B.

    1985-01-01

    This paper describes problems concerning the calibration of germanium detectors for the measurement of gamma-radiation from environmental samples. It also contains a brief description of some ways of reducing the uncertainties concerning the activity determination. These uncertainties have many sources, such as counting statistics, full energy peak efficiency determination, density correction and radionuclide specific-coincidence effects, when environmental samples are investigated at close source-to-detector distances

  17. Composite germanium monochromators - results for the TriCS

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

  18. A catalyst-free synthesis of germanium nanowires obtained by ...

    Indian Academy of Sciences (India)

    2015-08-25

    Aug 25, 2015 ... Noteworthy, core–shell morphological architec- tures of germanium NWs, with a crystal core embedded in a less-ordered nanocrystalline or amorphous Ge-shell, have been reported, providing a broad-peak experimental. XRPD diffraction pattern [14]. The deposited materials on the upper substrate surface ...

  19. crystal

    Science.gov (United States)

    Yu, Yi; Huang, Yisheng; Zhang, Lizhen; Lin, Zhoubin; Sun, Shijia; Wang, Guofu

    2014-07-01

    A Nd3+:Na2La4(WO4)7 crystal with dimensions of ϕ 17 × 30 mm3 was grown by the Czochralski method. The thermal expansion coefficients of Nd3+:Na2La4(WO4)7 crystal are 1.32 × 10-5 K-1 along c-axis and 1.23 × 10-5 K-1 along a-axis, respectively. The spectroscopic characteristics of Nd3+:Na2La4(WO4)7 crystal were investigated. The Judd-Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10-20 cm2 with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10-20 cm2 with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10-20 cm2 for σ-polarization and 2.67 × 10-20 cm2 for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd3+:Na2La4(WO4)7 crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd3+:Na2La4(WO4)7 crystal as a promising laser crystal fit for laser diode pumping.

  20. Nonthermal plasma synthesis of size-controlled, monodisperse, freestanding germanium nanocrystals

    International Nuclear Information System (INIS)

    Gresback, Ryan; Holman, Zachary; Kortshagen, Uwe

    2007-01-01

    Germanium nanocrystals may be of interest for a variety of electronic and optoelectronic applications including photovoltaics, primarily due to the tunability of their band gap from the infrared into the visible range of the spectrum. This letter discusses the synthesis of monodisperse germanium nanocrystals via a nonthermal plasma approach which allows for precise control of the nanocrystal size. Germanium crystals are synthesized from germanium tetrachloride and hydrogen entrained in an argon background gas. The crystal size can be varied between 4 and 50 nm by changing the residence times of crystals in the plasma between ∼30 and 440 ms. Adjusting the plasma power enables one to synthesize fully amorphous or fully crystalline particles with otherwise similar properties

  1. Detector materials: germanium and silicon

    International Nuclear Information System (INIS)

    Haller, E.E.

    1981-11-01

    This article is a summary of a short course lecture given in conjunction with the 1981 Nuclear Science Symposium. The basic physical properties of elemental semiconductors are reviewed. The interaction of energetic radiation with matter is discussed in order to develop a feeling for the appropriate semiconductor detector dimensions. The extremely low net dopant concentrations which are required are derived directly from the detector dimensions. A survey of the more recent techniques which have been developed for the analysis of detector grade semiconductor single crystals is presented

  2. Tunable conductivity in mesoporous germanium

    Science.gov (United States)

    Beattie, Meghan N.; Bioud, Youcef A.; Hobson, David G.; Boucherif, Abderraouf; Valdivia, Christopher E.; Drouin, Dominique; Arès, Richard; Hinzer, Karin

    2018-05-01

    Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10‑3) Ω‑1 cm‑1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10‑3 Ω‑1 cm‑1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

  3. Multi-scale characterization of lyotropic liquid crystals using 2H and diffusion MRI with spatial resolution in three dimensions.

    Science.gov (United States)

    Bernin, Diana; Koch, Vanessa; Nydén, Magnus; Topgaard, Daniel

    2014-01-01

    The ability of lyotropic liquid crystals to form intricate structures on a range of length scales can be utilized for the synthesis of structurally complex inorganic materials, as well as in devices for controlled drug delivery. Here we employ magnetic resonance imaging (MRI) for non-invasive characterization of nano-, micro-, and millimeter scale structures in liquid crystals. The structure is mirrored in the translational and rotational motion of the water, which we assess by measuring spatially resolved self-diffusion tensors and 2H spectra. Our approach differs from previous works in that the MRI parameters are mapped with spatial resolution in all three dimensions, thus allowing for detailed studies of liquid crystals with complex millimeter-scale morphologies that are stable on the measurement time-scale of 10 hours. The 2H data conveys information on the nanometer-scale structure of the liquid crystalline phase, while the combination of diffusion and 2H data permits an estimate of the orientational distribution of micrometer-scale anisotropic domains. We study lamellar phases consisting of the nonionic surfactant C10E3 in 2H2O, and follow their structural equilibration after a temperature jump and the cessation of shear. Our experimental approach may be useful for detailed characterization of liquid crystalline materials with structures on multiple length scales, as well as for studying the mechanisms of phase transitions.

  4. Nitrogen in germanium

    Science.gov (United States)

    Chambouleyron, I.; Zanatta, A. R.

    1998-07-01

    The known properties of nitrogen as an impurity in, and as an alloy element of, the germanium network are reviewed in this article. Amorphous and crystalline germanium-nitrogen alloys are interesting materials with potential applications for protective coatings and window layers for solar conversion devices. They may also act as effective diffusion masks for III-V electronic devices. The existing data are compared with similar properties of other group IV nitrides, in particular with silicon nitride. To a certain extent, the general picture mirrors the one found in Si-N systems, as expected from the similar valence structure of both elemental semiconductors. However, important differences appear in the deposition methods and alloy composition, the optical properties of as grown films, and the electrical behavior of nitrogen-doped amorphous layers. Structural studies are reviewed, including band structure calculations and the energies of nitrogen-related defects, which are compared with experimental data. Many important aspects of the electronic structure of Ge-N alloys are not yet completely understood and deserve a more careful investigation, in particular the structure of defects associated with N inclusion. The N doping of the a-Ge:H network appears to be very effective, the activation energy of the most effectively doped samples becoming around 120 meV. This is not the case with N-doped a-Si:H, the reasons for the difference remaining an open question. The lack of data on stoichiometric β-Ge3N4 prevents any reasonable assessment on the possible uses of the alloy in electronic and ceramic applications.

  5. Bandwidth improvement for germanium photodetector using wire bonding technology.

    Science.gov (United States)

    Chen, Guanyu; Yu, Yu; Deng, Shupeng; Liu, Lei; Zhang, Xinliang

    2015-10-05

    We demonstrate an ultrahigh speed germanium photodetector by introducing gold wires into the discrete ground electrodes with standard wire bonding technology. To engineer the parasitic parameter, the physical dimension of the gold wire used for wire bonding is specially designed with an inductance of about 450 pH. Simulation and experimental results show that the bandwidth of the photodetector can be effectively extended from less than 30 GHz to over 60 GHz.

  6. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  7. Inelasticity and precipitation of germanium from a solid solution in Al-Ge binary alloys

    Science.gov (United States)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.

    2015-08-01

    The influence of precipitation of germanium atoms in a solid solution on the dependence of the inelasticity characteristics on the germanium content in aluminum-germanium alloys prepared by directional crystallization has been studied. It has been shown that the Young's modulus defect, the amplitude-dependent decrement, and the microplastic flow stress at a specified cyclic strain amplitude have extreme values at the eutectic germanium content in the alloy. The eutectic composition of the alloy undergoes a ductilebrittle transition. It has been found that there is a correlation between the dependences of the Young's modulus defect, amplitude-dependent decrement, microplastic flow stress, and specific entropy of the exothermal process of germanium precipitation on the germanium content in the hypoeutectic alloy. The concentration dependences of the inelasticity characteristics and their changes after annealing have been explained by the change in the resistance to the motion of intragrain dislocations due to different structures of the Guinier-Preston zones formed during the precipitation of germanium atoms.

  8. [Effects of Germanium Concentrations on Germanium Accumulation and Biotransformation of Polysaccarified Germanium in Cordyceps militaris].

    Science.gov (United States)

    Wang, Ju-feng; Li, Hu-ming; Yang, Dao-de

    2015-11-01

    To study the effects of Germanium (Ge) concentration on Ge accumulation and biotransformation of polysaccarified Ge (PG) in Cordyceps militaris. Solid and liquid culture were used in this study. In the solid culture conditions, when the Ge concentration of medium was 200 mg/L, the sporophore biomass of Cordyceps militaris was the maximum; and when Ge concentration was 300 mg/L,the amount of biotransformation of PG in sporophore was the highest; and when the Ge concentration is 250 mg/L, conversion rate of organic germanium (OG) in sporophore reached the highest value. In the liquid culture conditions, when the Ge concentration was 250 mg/L, the mycelium biomass of Cordyceps militaris was the maximum; and when Ge concentration was 150 mg/L, the amount of organic conversion of PG in mycelium was the most; and conversion rate of OG in mycelium was the highest in media with the Ge concentration of 200 mg/L. This study showed the germanium concentrations in 150 - 300 mg/L was more suitable for Ge accumulation and biotransformation of PG in Cordyceps militaris. In general, the biotransformation capacity to germanium of sporophore was stronger than that of mycelium of Cordyceps militaris. Germanium can significantly affect Ge accumulation and biotransformation of PG in Cordyceps militaris (P Cordyceps militaris.

  9. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Carrier multiplication in germanium nanocrystals

    NARCIS (Netherlands)

    Saeed, S.; de Weerd, C.; Stallinga, P.; Spoor, F.C.M.; Houtepen, A.J.; Siebbeles, L.D.A.; Gregorkiewicz, T.

    2015-01-01

    Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon-dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average

  11. Acoustic absorption by the electron-hole liquid in germanium

    International Nuclear Information System (INIS)

    Hansen, A.D.A.

    1977-11-01

    The absorption of ultrasonic acoustic waves by the electron-hole liquid that may be created in germanium at liquid helium temperatures by intense optical excitation was studied. This is a degenerate compensated Fermi liquid that exhibits the behavior of both classical dynamics in a force field, and quantum phenomena in a magnetic field. Results of theoretical and experimental studies of the interaction of the mobile liquid with a travelling acoustic wave force field, the attenuation of the wave due to energy-dissipative processes coupling the liquid to the crystal lattice, and the effect of a moderately strong magnetic field on the dynamic behavior of the system are presented. In unstrained germanium the electron-hole liquid (EHL) is known to be condensed into small droplets of radius approx. 5 μm; the creation of an EHL energy well by the application of an inhomogeneous stress causes the liquid to be aggregated into a macroscopically large volume

  12. Acoustic absorption by the electron-hole liquid in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, A.D.A.

    1977-11-01

    The absorption of ultrasonic acoustic waves by the electron-hole liquid that may be created in germanium at liquid helium temperatures by intense optical excitation was studied. This is a degenerate compensated Fermi liquid that exhibits the behavior of both classical dynamics in a force field, and quantum phenomena in a magnetic field. Results of theoretical and experimental studies of the interaction of the mobile liquid with a travelling acoustic wave force field, the attenuation of the wave due to energy-dissipative processes coupling the liquid to the crystal lattice, and the effect of a moderately strong magnetic field on the dynamic behavior of the system are presented. In unstrained germanium the electron-hole liquid (EHL) is known to be condensed into small droplets of radius approx. 5 ..mu..m; the creation of an EHL energy well by the application of an inhomogeneous stress causes the liquid to be aggregated into a macroscopically large volume.

  13. Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction.

    Science.gov (United States)

    Guilloy, Kevin; Pauc, Nicolas; Gassenq, Alban; Gentile, Pascal; Tardif, Samuel; Rieutord, François; Calvo, Vincent

    2015-04-08

    Applying tensile strain in a single germanium crystal is a very promising way to tune its bandstructure and turn it into a direct band gap semiconductor. In this work, we stress vapor-liquid-solid grown germanium nanowires along their [111] axis thanks to the strain tranfer from a silicon nitride thin film by a microfabrication process. We measure the Γ-LH direct band gap transition by photocurrent spectrometry and quantify associated strain by X-ray Laue microdiffraction on beamline BM32 at the European Synchrotron Radiation Facility. Nanowires exhibit up to 1.48% strain and an absorption threshold down to 0.73 eV, which is in good agreement with theoretical computations for the Γ-LH transition, showing that the nanowire geometry is an efficient way of applying tensile uniaxial stress along the [111] axis of a germanium crystal.

  14. Harmonic Lattice Dynamics of Germanium

    International Nuclear Information System (INIS)

    Nelin, G.

    1974-01-01

    The phonon dispersion relations of the Δ-, Λ-, and Σ-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field

  15. Harmonic Lattice Dynamics of Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Nelin, G.

    1974-07-01

    The phonon dispersion relations of the DELTA-, LAMBDA-, and SIGMA-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field.

  16. Study on the local atomic structure of germanium in organic germanium compounds by EXAFS

    Science.gov (United States)

    Wang, Yin-song; Wu, Zhong-hua; Shi, Yun-tian; Wang, Yong-jie

    1999-04-01

    Organic germanium compounds have been extensively applied in medicine as tonics. In this paper, the local structures of two organic germanium compounds, carboxyethylgermanium sesquioxide and polymeric germanium glutamate, were determined by EXAFS. The structure parameters including coordination numbers and bond lengths were reported, and possible structure patterns were discussed.

  17. Hydrothermal synthesis of bismuth germanium oxide

    Science.gov (United States)

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  18. A crystalline germanium flexible thin-film transistor

    Science.gov (United States)

    Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

    2017-11-01

    We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

  19. Synthesis and evaluation of germanium organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

    International Nuclear Information System (INIS)

    Ballestero Martinez, Ernesto

    2014-01-01

    The interest in the development of materials having applications such as electronics areas or biomarkers has affected the synthesis of new compounds based on germanium. This element has had two common oxidation states, +4 and +2, of them, +2 oxidation state has been the least studied and more reactive. Additionally, compounds of germanium (II) have had similarities with carbenes regarding the chemical acid-base Lewis. The preparation of compounds of germanium (II) with ligands β-decimations has enabled stabilization of new chemical functionalities and, simultaneously, provided interesting thermal properties to develop new preparation methodologies of materials with novel properties. The preparation of amides germanium(II) L'Ge(NHPh) [1, L' = {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 }], L'Ge(4-NHPy) [2] L'Ge(2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC(CMeN-2,6- i Pr 2 C 6 H 3 ) 2 }]; the structural chemical composition were determined using techniques such as nuclear magnetic resonance ( 1 H, 13 C), other techniques are treated: elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermal gravimetric analysis (TGA). The TGA has showed that 4-1 have experimented a thermal decomposition; therefore, these compounds could be considered as potential starting materials for obtaining germanium nitride (GeN x ). Certainly, the availability of nitrogen coordinating atoms in the chemical composition in 2-4 have been interesting because it could act as ligands in reactions with transition metal complexes. That way, information could be obtained at the molecular level for some reactions and interactions that in surface chemistry have used similar link sites, for example, chemical functionalization of silicon and germanium substrates. The synthesis and structural characterization of germanium chloride compound(II) L''GeCl [5, L'' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 ], which could be used later for the

  20. CCDC 761158: Experimental Crystal Structure Determination : catena-[tetrakis(2-Methylpiperazinium) octakis(mu~3~-oxo)-tetratetracontakis(mu~2~-oxo)-tetrahydroxo-pentacosa-germanium(iv) 2-methylpiperazine solvate pentahydrate

    KAUST Repository

    Yue, Huijuan

    2013-01-01

    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  1. CCDC 1047860: Experimental Crystal Structure Determination : catena-[heptakis(mu-selenido)-bis(ethane-1,2-diamine)-diselenido-tri-germanium-di-manganese bis(ethane-1,2-diamine)-hydroxy-manganese

    KAUST Repository

    Zhang, Guodong

    2015-01-01

    An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

  2. Solution synthesis of germanium nanocrystals

    Science.gov (United States)

    Gerung, Henry [Albuquerque, NM; Boyle, Timothy J [Kensington, MD; Bunge, Scott D [Cuyahoga Falls, OH

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  3. A pseudo-single-crystalline germanium film for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Higashi, H.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kasahara, K.; Park, J.-H.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Kudo, K.; Okamoto, H.; Moto, K.; Tsunoda, I. [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan)

    2015-01-26

    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

  4. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  5. Germanium content in Polish hard coals

    Directory of Open Access Journals (Sweden)

    Makowska Dorota

    2016-01-01

    Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

  6. NTD germanium: a novel material for low-temperature bolometers

    International Nuclear Information System (INIS)

    Haller, E.E.; Palaio, N.P.; Rodder, M.; Hansen, W.L.; Kreysa, E.

    1982-06-01

    Six samples of ultra-pure (absolute value N/sub A/ - N/sub D/ absolute value less than or equal to 10 11 cm -3 ), single-crystal germanium have been neutron transmutation doped with neutron doses between 7.5 x 10 16 and 1.88 x 10 18 cm -2 . After thermal annealing at 400 0 C for six hours in a pure argon atmosphere, the samples have been characterized with Hall effect and resistivity measurements between 300 and 0.3 K. Our results show that the resistivity in the low temperature, hopping conduction regime can be approximated with rho = rho 0 exp(Δ/T). The three more heavily doped samples show values for rho 0 and Δ ranging from 430 to 3.3 Ω cm and from 4.9 to 2.8 K, respectively. The excellent reproducibility of neutron transmutation doping and the values of rho 0 and Δ make NTD Ge a prime candidate for the fabrication of low temperature, low noise bolometers. The large variation in the tabulated values of the thermal neutron cross sections for the different germanium isotopes makes it clear that accurate measurements of these cross-sections for well defined neutron energy spectra would be highly desirable

  7. Study and characterization of porous germanium for radiometric measurements

    Energy Technology Data Exchange (ETDEWEB)

    Akkari, E.; Benachour, Z.; Touayar, O.; Benbrahim, J. [Activites de Recherche, Metrologie des Rayonnements, Institut National des Sciences Appliquees et de Technologie, INSAT, Tunis (Tunisia); Aouida, S.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes de l' Energie, LaNSE, Centre de Recherche et des Technologies de l' Energie, CRTEn, Hammam-Lif (Tunisia)

    2009-07-15

    The aim of this article is to study and realize a new detector based on a porous germanium (pGe) photodiode to be used as a standard for radiometric measurement in the wavelength region between 800 nm and 1700 nm. We present the development and characterization of a porous structure realized on a single-crystal substrate of p-type germanium (Ga doped) and of crystallographic orientation (100). The obtained structure allows, on the one hand, to trap the incident radiation, and on the other hand, to minimize the fluctuations of the front-face reflection coefficient of the photodiode. The first studies thus made show that it is possible to optimize, respectively, the electrical current density and the electrochemical operation time necessary for obtaining exploitable porous structures. The obtained results show that for 50 mA/cm{sup 2} and 5 min as operational parameters, we obtain a textured aspect of the porous samples that present a pyramidal form. The reflectivity study of the front surface shows a constant value of around 38% in a spectral range between 800 nm and 1700 nm approximately. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Germanium nanowires grown using different catalyst metals

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia, R.C., E-mail: riama@ifsp.edu.br [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP 14169-263 (Brazil); Kamimura, H.; Munhoz, R.; Rodrigues, A.D. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Leite, E.R. [Departamento de Química – LIEC, Universidade Federal de São Carlos, São Carlos, CEP 13565-905 (Brazil); Chiquito, A.J. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil)

    2016-11-01

    Germanium nanowires have been synthesized by the well known vapor-liquid-solid growth mechanism using gold, silver, cooper, indium and nickel as catalyst metals. The influence of metal seeds on nanowires structural and electronic transport properties was also investigated. Electron microscopy images demonstrated that, despite differences in diameters, all nanowires obtained presented single crystalline structures. X-ray patterns showed that all nanowires were composed by germanium with a small amount of germanium oxide, and the catalyst metal was restricted at the nanowires' tips. Raman spectroscopy evidenced the long range order in the crystalline structure of each sample. Electrical measurements indicated that variable range hopping was the dominant mechanism in carrier transport for all devices, with similar hopping distance, regardless the material used as catalyst. Then, in spite of the differences in synthesis temperatures and nanowires diameters, the catalyst metals have not affected the composition and crystalline quality of the germanium nanowires nor the carrier transport in the germanium nanowire network devices. - Highlights: • Ge nanowires were grown by VLS method using Au, Ag, Cu, In and Ni as catalysts. • All nanowires presented high single crystalline quality and long range order. • Devices showed semiconducting behavior having VRH as dominant transport mechanism. • The metal catalyst did not influence structural properties or the transport mechanism.

  9. Method of beryllium implantation in germanium substrate

    International Nuclear Information System (INIS)

    Kagawa, S.; Baba, Y.; Kaneda, T.; Shirai, T.

    1983-01-01

    A semiconductor device is disclosed, as well as a method for manufacturing it in which ions of beryllium are implanted into a germanium substrate to form a layer containing p-type impurity material. There after the substrate is heated at a temperature in the range of 400 0 C. to 700 0 C. to diffuse the beryllium ions into the substrate so that the concentration of beryllium at the surface of the impurity layer is in the order of 10 17 cm- 3 or more. In one embodiment, a p-type channel stopper is formed locally in a p-type germanium substrate and an n-type active layer is formed in a region surrounded by, and isolated from, the channel stopper region. In another embodiment, a relatively shallow p-type active layer is formed at one part of an n-type germanium substrate and p-type guard ring regions are formed surrounding, and partly overlapping said p-type active layer. In a further embodiment, a p-type island region is formed at one part of an n-type germanium substrate, and an n-type region is formed within said p-type region. In these embodiments, the p-type channel stopper region, p-type guard ring regions and the p-type island region are all formed by implanting ions of beryllium into the germanium substrate

  10. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

    2017-01-30

    Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  11. Anomalous compression behavior of germanium during phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaozhi [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Tan, Dayong [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Guangzhou Institute of Geochemistry, Chinese Academic of Sciences, Guangzhou 510640 (China); Ren, Xiangting [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Yang, Wenge, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); He, Duanwei, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Mao, Ho-Kwang [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States)

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  12. Neutron-transmutation-doped germanium bolometers

    International Nuclear Information System (INIS)

    Palaio, N.P.; Rodder, M.; Haller, E.E.; Kreysa, E.

    1983-02-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 16 and 1.88 x 10 18 cm - 2 . After thermal annealing the resistivity was measured down to low temperatures ( 0 exp(δ/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers

  13. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    International Nuclear Information System (INIS)

    Irlbeck, Sabine

    2014-01-01

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  14. Characterization of nanocrystalline silicon germanium film and ...

    African Journals Online (AJOL)

    The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

  15. Filtering microphonics in dark matter germanium experiments

    International Nuclear Information System (INIS)

    Morales, J.; Garcia, E.; Ortiz de Solorzano, A.; Morales, A.; Nunz-Lagos, R.; Puimedon, J.; Saenz, C.; Villar, J.A.

    1992-01-01

    A technique for reducing the microphonic noise in a germanium spectrometer used in dark matter particles searches is described. Filtered energy spectra, corresponding to 48.5 kg day of data in a running experiment in the Canfranc tunnel are presented. Improvements of this filtering procedure with respect to the method of rejecting those events not distributed evenly in time are also discussed. (orig.)

  16. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-07-26

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

  17. Comparison of organic and inorganic germanium compounds in cellular radiosensitivity and preparation of germanium nanoparticles as a radiosensitizer.

    Science.gov (United States)

    Lin, Ming-Hsing; Hsu, Tzu-Sheng; Yang, Pei-Ming; Tsai, Meng-Yen; Perng, Tsong-Pyng; Lin, Lih-Yuan

    2009-03-01

    The aim of this work is to compare the radiosensitizing effect between organic and inorganic germanium compounds and to investigate whether nanometer-sized germanium particles can act as radiosensitizers. Bis (2-carboxyethylgermanium) sesquioxide (Ge-132), germanium oxide (GeO(2)) and germanium nanoparticles were used in this study. Cell viability was determined by clonogenic survival assay. Cellular DNA damage was evaluated by alkaline comet assay, confocal microscopy and the cellular level of phospho-histone H2AX (gamma-H2AX). Nanometer-sized germanium particles were fabricated. They have a similar radiosensitizing effect as that of GeO(2). Conversely, Ge-132 did not enhance the radiosensitivity of cells. Comet assay was employed to evaluate the level of DNA damage and confirmed that inorganic germanium compounds enhanced cellular radiosensitivity. Notably, the comet assay indicated that the nanoparticle itself caused a higher level of DNA damage. The possibility that germanium nanoparticles per se caused DNA damage was ruled out when the cellular level of gamma-H2AX was examined. We demonstrated that inorganic but not organic germanium compounds exerted radiosensitizing effect in cells. Nanometer-sized germanium particles were fabricated and were able to enhance the radiosensitivity of cells. Confounding effect may occur when comet assay is used to estimate the level of DNA damage in the presence of germanium nanoparticles.

  18. Technology CAD for germanium CMOS circuit

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

    2006-12-15

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

  19. Technology CAD for germanium CMOS circuit

    International Nuclear Information System (INIS)

    Saha, A.R.; Maiti, C.K.

    2006-01-01

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

  20. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  1. Silicon Germanium Cryogenic Low Noise Amplifiers

    Science.gov (United States)

    Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

    2017-05-01

    Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

  2. [Absolute and relative bioavailability of germanium in the rabbit].

    Science.gov (United States)

    Anger, F S; Anger, J P; Sado, P A; Chevanne, F

    1994-01-01

    The debated consumption of germanium suggested the authors to compare biopharmaceutical parameters of germanium oxide and germanium sesquioxide. A first evaluation, in rabbit, has been based on Germanium blood levels determined by atomic absorption spectrometry, after cross administration of both products by the I.V. and oral routes. When given orally, the apparent oxide bioavailability is very low (about 10%) but better than that of the sesquioxide. That difference could result from differences of disposition parameters of both products, which have to be studied late.

  3. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  4. Ultrafast palladium diffusion in germanium

    KAUST Repository

    Tahini, Hassan Ali

    2015-01-01

    The slow transport of dopants through crystal lattices has hindered the development of novel devices. Typically atoms are contained within deep potential energy wells which necessitates multiple attempts to hop between minimum energy positions. This is because the bonds that constrain atoms are strongest at the minimum positions. As they hop between sites the bonds must be broken, only to re-form as the atoms slide into adjacent minima. Here we demonstrate that the Pd atoms introduced into the Ge lattice behave differently. They retain bonds as the atoms shift across so that at the energy maximum between sites Pd still exhibits strong bonding characteristics. This reduces the energy maximum to almost nothing (a migration energy of only 0.03 eV) and means that the transport of Pd through the Ge lattice is ultrafast. We scrutinize the bonding characteristics at the atomic level using quantum mechanical simulation tools and demonstrate why Pd behaves so differently to other metals we investigated (i.e. Li, Cu, Ag, Pt and Au). Consequently, this fundamental understanding can be extended to systems where extremely rapid diffusion is desired, such as radiation sensors, batteries and solid oxide fuel cells.

  5. Extra dimensions:

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Extra dimensions: There is another way that particles arise from string theory. This has to do with extra space dimensions. String theory is consistent in 9 spatial dimensions. But we live in 3 dimensions. So the other 6 must be compact. Notes:

  6. Measuring Pu in a glove box using portable NaI and germanium detectors

    International Nuclear Information System (INIS)

    Hankins, D.E.

    1984-01-01

    A NaI crystal or germanium detector inside a portable lead shield can determine the amount of plutonium in a glove box. The number of counts required are defined and the locations outside the box where the detector needs to be positioned are given. The calculated accuracy for measuring the Pu when these locations are used is within +/-30% for most glove boxes. Other factors that may affect this accuracy, such as γ-ray absorption by glove-box materials, self-absorption by Pu, absorption by equipment in the glove box, and the limits of the counting equipment are also discussed

  7. Germanium Dumbbells in a New Superconducting Modification of BaGe3.

    Science.gov (United States)

    Castillo, Rodrigo; Baranov, Alexey I; Burkhardt, Ulrich; Cardoso-Gil, Raul; Schnelle, Walter; Bobnar, Matej; Schwarz, Ulrich

    2016-05-02

    We report the high-pressure high-temperature synthesis (P = 15 GPa, T = 1300 K) of BaGe3(tI32) adopting a CaGe3-type crystal structure. Bonding analysis reveals layers of covalently bonded germanium dumbbells being involved in multicenter Ba-Ge interactions. Physical measurements evidence metal-type electrical conductivity and a transition to a superconducting state at 6.5 K. Chemical bonding and physical properties of the new modification are discussed in comparison to the earlier described hexagonal form BaGe3(hP8) with a columnar arrangement of Ge3 triangles.

  8. Dual germanium detector system for the routine assay of low level transuranics in soil

    International Nuclear Information System (INIS)

    Crowell, J.M.

    1980-01-01

    As an outgrowth of previous on soil radioassay, we have developed an automated assay system for determining the transuranic radionuclide content of soils, with particular interest in Pu. The system utilizes two commercial planar intrinsic germanium detectors in opposition. The large area of the detectors (2100 mm 2 ) and the thinness of the detector crystals (7 mm) permit sensitive analysis of the L x ray emission region of the transuranics (13 to 21 keV). With counting times of 5 hours, we obtain detection limits of 241 Am

  9. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    CERN Document Server

    Avignone, F T; Brodzinski, R; Collar, J I; Creswick, R J; Di Gregorio, D E; Farach, H A; Gattone, A O; Guérard, C K; Hasenbalg, F; Huck, H; Miley, H S; Morales, A; Morales, J; Nussinov, S; De Solorzano, A O; Reeves, J H; Villar, J; Zioutas, Konstantin

    1998-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2.7\\cdot 10^{-9}$ GeV$^{-1}$, independent of axion mass up to ~ 1 keV.

  10. Germanium: From Its Discovery to SiGe Devices

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  11. Aerosol assisted chemical vapour deposition of germanium thin ...

    Indian Academy of Sciences (India)

    films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (I–V) characterization. Keywords. Organogermanium; germanium thin films; AACVD; XRD. 1. Introduction. Germanium has gained a renewed interest in electronics industry due to its lower bandgap ...

  12. Ultraviolet-light-induced processes in germanium-doped silica

    DEFF Research Database (Denmark)

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...

  13. Frenkel pairs in germanium and silicon (review)

    International Nuclear Information System (INIS)

    Emtsev, V.V.; Mashovets, T.V.; Mikhnovich, V.V.

    1992-01-01

    A state-of-the-art review is given of the properties of primary structure defects (Frenkel pairs) in silicon and geramanium. The process of formation of Frenkel pairs under conditions of irradiation with electrons or with γrays of ∼1 MeV energy at temperatures 4.2-300 K is considered. Approximate calculations are made of the energy of the interaction of the Frenkel pair components, vacancies (V) and interstitial atoms (I), in the approximation of an anisotropic elastic continuum subject to the electrostatic and elastic interactions. It is shown that the contribution of the flexoelectric effect may be considerable and should be allowed for in estimating the energy of the electrostatic interaction between V and I in those cases when one or both Frenkel pair components are electrically neutral. The mobility of V and I is considered, including the mobility during irradiation, and the energy spectra of vacancies and interstitials are discussed. The dependence of the probability of annihilation of homogeneous V and I on a whole range of parameters (temperature and intensity of irradiation, impurity composition of the irradiated material, densities of equilibrium and nonequilibrium carriers) is considered. An analysis of this dependence makes it possible to interpret qualitatively a complex nonmonotonic dependence of the efficiency of formation of primary and secondary (including impurity atoms) defects on the irradiation temperature and the radiation intensity and on the type of conduction of germanium. A nomogram is plotted for describing the dependence of the efficiency of defect formation in n-type germanium at 300 K on the radiation intensity and on the concentration of group V donors. It is shown that metastable Frenkel pairs are not observed in silicon, whereas germanium represents a unique opportunity for detecting such metastable pairs in an elemental semiconductor with the covalent type of binding. 68 refs., 7 figs., 2 tabs

  14. Temperature dependence of the infrared optical constants of germanium films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Dandan, E-mail: ldd6162@163.com; Liu, Huasong; Jiang, Chenghui; Leng, Jian; Zhang, Yanmin; Zhao, Zhihong; Zhuang, Kewen; Jiang, Yugang; Ji, Yiqin

    2015-10-01

    High-temperature transmittance spectrum of germanium films was obtained by a Fourier Transform infrared spectroscopy with a high-temperature accessory. The optical constants were determined by transmittance spectrum fitting with a Gaussian oscillator as the dispersion model. The analysis results showed that both the refractive index and extinction coefficient increased with the increasing temperature. The square of the refractive index increased linearly with the increasing temperature. The higher the temperature was, the faster the absorption coefficient increased. The germanium films were deposited on chemical vapor deposition ZnS substrates by ion-beam-assisted deposition. The region of temperature was between room temperature and 773 K, and the analysis spectrum was between 2000 nm and 5000 nm. - Highlights: • Temperature dependence of transmittance spectrum of Germanium films • Temperature properties of refractive index of Germanium films • Temperature properties of absorption coefficient of Germanium films.

  15. Array of germanium detectors for nuclear safeguards

    International Nuclear Information System (INIS)

    Moss, C.E.; Bernard, W.; Dowdy, E.J.; Garcia, C.; Lucas, M.C.; Pratt, J.C.

    1983-01-01

    Our gamma-ray spectrometer system, designed for field use, offers high efficiency and high resolution for safeguards applications. The system consists of three 40% high-purity germanium detectors and a LeCroy 3500 data-acquisition system that calculates a composite spectrum for the three detectors. The LeCroy 3500 mainframe can be operated remotely from the detector array with control exercised through moderns and the telephone system. System performance with a mixed source of 125 Sb, 154 Eu, and 155 Eu confirms the expected efficiency of 120% with an overall resolution that is between the resolution of the best detector and that of the worst

  16. Tensile strain mapping in flat germanium membranes

    Energy Technology Data Exchange (ETDEWEB)

    Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  17. Tensile strain mapping in flat germanium membranes

    International Nuclear Information System (INIS)

    Rhead, S. D.; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R.; Shah, V. A.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.; Sotomayor Torres, C. M.

    2014-01-01

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge

  18. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  19. Electromechanically cooled germanium radiation detector system

    International Nuclear Information System (INIS)

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-01-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++, GAMANL, GRPANL and MGAU, typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service . The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted

  20. Investigation of the group growing process for monocrystalline germanium rods by Stepanov's method in a rectilinear thermal zone

    CERN Document Server

    Egorov, L P; Zatulovskii, L M; Chaikin, P M; Gulyaev, Y V; Zhvirblyanskii, V Yu; Levinzon, D I; Smirnov, Yu M; Sachkov, G V

    1973-01-01

    The apparatus used had a floating former for the stable growth of 7.9 germanium rods of 8.9 mm. dia. from a crucible charge of approximately 3 kg. The control of the crystal growth front is discussed in experimental and theoretical terms. It is claimed that inspection of the crystal front during growth, made possible in this apparatus by the provision of ports in the heater screens, greatly facilitates control and increases the quality (dislocation density, specific resistance etc.) of the product. (1 refs).

  1. Characterization of Germanium Speciation in Sphalerite (ZnS from Central and Eastern Tennessee, USA, by X-ray Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Julien Bonnet

    2017-05-01

    Full Text Available X-ray absorption near edge structure (XANES spectroscopy was used on zoned sphalerites (ZnS from two world-class Mississippi Valley Type deposits, the Central and Eastern Tennessee Mining district, USA, in order to investigate germanium oxidation states. Due to the low germanium concentrations of these samples, it was necessary to perform the X-ray absorption spectroscopy (XAS in fluorescence mode. The overlapping of the Zn Kβ and Ge Kα emission lines meant that a high energy-resolution was required. This was achieved using crystal analysers and allowed a bandwidth of 1.3 eV to be obtained. Experimental spectra were compared to XANES calculations and three configurations of germanium incorporation into sphalerite were identified. The first two, the most prevalent, show germanium (II and (IV surrounded by sulphur atoms in tetrahedral coordination, suggesting the replacement of Zn by Ge. In the third configuration, germanium (IV is surrounded by oxygen atoms. This third configuration is unexpected for a zinc sulphide mineral and it resembles that of argutite (GeO2.

  2. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  3. Phenomenon of ''self-cleaning'' of crystals

    International Nuclear Information System (INIS)

    Matveev, O.A.; Arkad'eva, E.N.; Goncharov, L.A.

    1975-01-01

    Crystals of germanium and cadmium telluride have been produced having the characteristics corresponding to the low content of electrically active impurities and crystal defects. The crystals have been grown under conditions of an equilibrium diffusion-concentration interaction of the impurities and crystal defects, with the donor alloying and controlling the acceptors concentration. These crystals have been studied with the help of the mass-spectral analysis, the Hall effect, photoelectroscopy, spectral photoconductivity and losses of collection of a charge from an ionizing particle on gamma-detectors fabricated of the crystals. Herein the doped composition of the crystals has been determined, the concentrations of the shallow and deep acceptors and donors have been measured separately, the life-times of the electrons and holes have been measured, the energetic position and the concentration of the carrier capture levels have been determined. The crystals grown possess all the characteristic features of rather pure crystals. The results of the mass-spectral analysis have shown that in the cadmium telluride crystals the impurities are present within 10 14 to 10 17 cm -3 . Therefore, a deep ''self-refining'' of the crystal takes place, which proceeds by means of deactivation of the electrically active centers with their associating into electrically inactive complexes. Thus a fact of the deep ''self-refining'' of germanium- and cadmium telluride crystals is stated. It is presumed that such a ''self-refining'' can actually proceed practically in all the crystals

  4. Germanium detectors and natural radioactivity in food

    Energy Technology Data Exchange (ETDEWEB)

    Garbini, Lucia [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GeDet-Collaboration

    2013-07-01

    Potassium is a very important mineral for many physiological processes, like fluid balance, protein synthesis and signal transmission in nerves. Many aliments like raisins, bananas or chocolate contain potassium. Natural potassium contains 0.012% of the radioactive isotope Potassium 40. This isotope decays via β{sup +} decay into a metastable state of Argon 40, which reaches its ground state emitting a gamma of 1460 keV. A commercially produced Germanium detector has been used to measure the energy spectra of different selected food samples. It was calibrated with KCl and potassium contents were extracted. Results verify the high potassium content of commonly recommended food samples. However, the measurement quantitatively differ from the expectations in several cases. One of the most interesting results concerns chocolate bars with different percentages of cacao.

  5. Whispering gallery germanium-on-silicon photodetector.

    Science.gov (United States)

    Su, Zhan; Hosseini, Ehsan Shah; Timurdogan, Erman; Sun, Jie; Moresco, Michele; Leake, Gerald; Adam, Thomas N; Coolbaugh, Douglas D; Watts, Michael R

    2017-08-01

    We design and demonstrate, to the best of our knowledge, the first whispering gallery germanium-on-silicon photodetector with evanescent coupling from a silicon bus waveguide in a CMOS-compatible process. The small footprint (63.6  μm 2 ), high responsivity (∼1.04  A/W at 1530 nm), low bias voltage (-1  V), low dark current (2.03 nA), and large optoelectric bandwidth (32.9 GHz) of the detector enable simultaneous wavelength filtering and power detection, ideal for handling large network data traffic. In addition, with the resonant nature of the detector, we also optimize the design to enable long-wavelength detection, achieving a separate device with a detection range of up to 1630 nm with a >0.45  A/W responsivity, making it an important building block for optical communication networks.

  6. Lattice site and thermal stability of transition metals in germanium

    CERN Document Server

    Augustyns, Valérie; Pereira, Lino

    Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

  7. Synthesis and evaluation of germanic organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

    International Nuclear Information System (INIS)

    Ballestero Martinez, Ernesto

    2014-01-01

    The interest in the development of materials that have applications in areas such as electronics or biomarkers has affected the synthesis of new compounds based on germanium. This element has two states of common oxidation, +4 and +2, of them, the +2 oxidation state is the least studied and more reactive. Additionally, compounds of germanium (II) have similarities to carbenes in terms Lewis'acid base chemistry. The preparation of compounds of germanium (II) with ligands β-diketiminates has made possible the stabilization of new chemical functionalities and, simultaneously, it has provided interesting thermal properties to develop new methods of preparation of materials with novel properties. The preparation of amides germanium (II) L'Ge (NHPh) [1, L'= {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 } - ], L'Ge (4-NHPy) [2], L'Ge (2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC (CMeN-2,6- i Pr 2 C 6 H 3 ) 2 ] - ] are presented, the chemical and structural composition was determined by using techniques such as nuclear magnetic resonance ( 1 H, 13 C), elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermogravimetric analysis (TGA). The TGA has demonstrated that 1-4 experience a thermal decomposition, therefore, these compounds could be considered as potential starting materials for the obtaining of germanium nitride (GeN x ). Certainly, the availability of coordinating nitrogen atoms in the chemical composition in 2-4 have been interesting given that it could act as ligands in reactions with transition metal complexes. Thus, relevant information to molecular level could be obtained for some reactions and interactions that have used similar link sites in surface chemistry, for example, the chemical functionalization of silicon and germanium substrate. Additionally, the synthesis and structural characterization of germanium chloride compound (II) L G eCl [5, L' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 - ] is reported

  8. Near-infrared emission from mesoporous crystalline germanium

    Energy Technology Data Exchange (ETDEWEB)

    Boucherif, Abderraouf; Aimez, Vincent; Arès, Richard, E-mail: richard.ares@usherbrooke.ca [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Korinek, Andreas [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada)

    2014-10-15

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  9. Protective infrared antireflection coating based on sputtered germanium carbide

    Science.gov (United States)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  10. Promoting cell proliferation using water dispersible germanium nanowires.

    Directory of Open Access Journals (Sweden)

    Michael Bezuidenhout

    Full Text Available Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM, High resolution-TEM, and scanning electron microscope (SEM. Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

  11. Method of fabricating germanium and gallium arsenide devices

    Science.gov (United States)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  12. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    Science.gov (United States)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  13. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  14. Lithium effects on the mechanical and electronic properties of germanium nanowires

    Science.gov (United States)

    González-Macías, A.; Salazar, F.; Miranda, A.; Trejo-Baños, A.; Pérez, L. A.; Carvajal, E.; Cruz-Irisson, M.

    2018-04-01

    Semiconductor nanowire arrays promise rapid development of a new generation of lithium (Li) batteries because they can store more Li atoms than conventional crystals due to their large surface areas. During the charge-discharge process, the electrodes experience internal stresses that fatigue the material and limit the useful life of the battery. The theoretical study of electronic and mechanical properties of lithiated nanowire arrays allows the designing of electrode materials that could improve battery performance. In this work, we present a density functional theory study of the electronic band structure, formation energy, binding energy, and Young’s modulus (Y) of hydrogen passivated germanium nanowires (H-GeNWs) grown along the [111] and [001] crystallographic directions with surface and interstitial Li atoms. The results show that the germanium nanowires (GeNWs) with surface Li atoms maintain their semiconducting behavior but their energy gap size decreases when the Li concentration grows. In contrast, the GeNWs can have semiconductor or metallic behavior depending on the concentration of the interstitial Li atoms. On the other hand, Y is an indicator of the structural changes that GeNWs suffer due to the concentration of Li atoms. For surface Li atoms, Y stays almost constant, whereas for interstitial Li atoms, the Y values indicate important structural changes in the GeNWs.

  15. Annealing effect on spin density of broken bonds and on the structure of amorphous germanium

    International Nuclear Information System (INIS)

    Bukhan'ko, F.N.; Okunev, V.D.; Samojlenko, Z.A.

    1989-01-01

    Dependence of volumetric spin density of broken bonds in a-Ge films, produced by cathode sputtering in argon, on the annealing temperature is investigated by ESR method. The film structure is controlled by the X-ray method. Two ESR lines with g=2.019 and g=2.003, their intensities changing non-monotonously with annealing temperature are observed. The line with g=2.019 is typical of only amorphous germanium state, and the line with g=2.003 is preserved after film crystallization. Under comparison of results with structural data a conclusion is made that the observed lines in ESR spectra are linked with broken bonds in peripheral regions of two types of clusters. The line with g=2.003 is conditioned by broken bonds in the peripheral cluster regions with standard cubic atom packing and the line with g=2.019 is linked with clusters of hexagonal type which is not typical of crystalline germanium standard structure

  16. Theoretical Investigations of the Hexagonal Germanium Carbonitride

    Directory of Open Access Journals (Sweden)

    Xinhai Yu

    2018-04-01

    Full Text Available The structural, mechanical, elastic anisotropic, and electronic properties of hexagonal germanium carbonitride (h-GeCN are systematically investigated using the first-principle calculations method with the ultrasoft pseudopotential scheme in the frame of generalized gradient approximation in the present work. The h-GeCN are mechanically and dynamically stable, as proved by the elastic constants and phonon spectra, respectively. The h-GeCN is brittle because the ratio B/G and Poisson’s ratio v of the h-GeCN are less than 1.75 and 0.26, respectively. For h-GeCN, from brittleness to ductility, the transformation pressures are 5.56 GPa and 5.63 GPa for B/G and Poisson’s ratio v, respectively. The h-GeCN exhibits the greater elastic anisotropy in Young’s modulus and the sound velocities. In addition, the calculated band structure of h-GeCN reveals that there is no band gap for h-GeCN with the HSE06 hybrid functional, so the h-GeCN is metallic.

  17. Tunnel current across linear homocatenated germanium chains

    International Nuclear Information System (INIS)

    Matsuura, Yukihito

    2014-01-01

    The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e −βL , of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge–Ge bond length is longer than the Si–Si bond length

  18. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develope a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four top-illuminated, 32x32 germanium sub-arrays...

  19. [Determination of GeO2 in germanium-132 by phenylfuorone].

    Science.gov (United States)

    Dong, Y; Shen, H

    1999-08-01

    Inorganic (GeO2) in carboxyethyl germanium sesquioxide (germanium-132) was determined by phenylfuorone spectrometry. The method is convenient and has good precision and accuracy. The recovery of GeO2 is 93%-107%.

  20. Silicon Germanium Quantum Well Solar Cell

    Data.gov (United States)

    National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...

  1. Influence of the disorder in doped germanium changed by compensation on the critical indices of the metal-insulator transition

    International Nuclear Information System (INIS)

    Rentzsch, R.; Reich, Ch.; Ionov, A.N.; Ginodman, V.; Slimak, I.; Fozooni, P.; Lea, M.J.

    1999-01-01

    We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of meso- and macroscopy inhomogeneity caused by the disorder of acceptors and donors in the crystals. By using the isotopic and engineering and the neutron transmutation doping of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν = 1/2 and ξ = 1, which double for medium compensations (at K = 39 and 54%) to ν 1 and ξ = 2, respectively

  2. Analytical product study of germanium-containing medicine by different ICP-MS applications

    NARCIS (Netherlands)

    Krystek, Petra; Ritsema, Rob

    2004-01-01

    For several years organo-germanium containing medicine has been used for special treatments of e.g. cancer and AIDS. The active substances contain germanium as beta-carboxyethylgermanium sesquioxide ((GeCH2CH 2COO-H)2O3/"Ge-132"), spirogermanium, germanium-lactate-citrate or unspecified forms. For

  3. Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium.

    Science.gov (United States)

    Flynn, Grace; Ramasse, Quentin M; Ryan, Kevin M

    2016-01-13

    Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge-Si, Si-Ge-Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy.

  4. Germane facts about germanium sesquioxide: II. Scientific error and misrepresentation.

    Science.gov (United States)

    Kaplan, Bonnie J; Andrus, G Merrill; Parish, W Wesley

    2004-04-01

    The preceding paper reviewed the anticancer properties and safety of bis (2-carboxyethylgermanium) sesquioxide (CEGS). An examination of those data leads one to question why this information has not stimulated clinical trials in patients with cancer. The answer is discussed in this paper, which traces the history to an error published in the scientific literature in 1987. The reliance by subsequent authors on secondary sources, citing only the error and not the correction published in 1988, constitutes part of the explanation of why CEGS has been neglected. A second factor is also considered: careless reporting about any germanium-based compound as if the many thousands of germanium compounds were all the same. This combination of a publication error, careless writing, and the reliance on secondary sources appears to be responsible for the neglect of the potential clinical use of this unique germanium compound.

  5. Transport in silicon-germanium heterostructures

    International Nuclear Information System (INIS)

    Chrastina, Daniel

    2001-01-01

    The work presented here describes the electrical characterization of n- and p-type strained silicon-germanium systems. Theories of quantum transport m low magnetic fields at low temperature are discussed m terms of weak-localization: the traditional theory is shown not to account for the dephasing in a 2-dimensional hole gas behaving in a metallic manner and emergent alternative theories, while promising, require refinement. The mobility as a function of sheet density is measured in a p-type pseudomorphic Si 0.5 Ge 0.5 across the temperature range 350mK-282K; it is shown that calculations of the mobility based on semi-classical scattering mechanisms fail below 10K where quantum transport effects become relevant. A room temperature Hall scattering factor has been extracted. A new functional form has been presented to fit the resistivity as a function of temperature, below 20K: traditional theories of screening and weak localization appear not to be applicable. It is also demonstrated that simple protection circuitry is essential if commercial-scale devices are to be meaningfully investigated. Mobility spectrum analysis is performed on an n-type strained-silicon device. Established analysis methods are discussed and a new method is presented based on the Bryan's Algorithm approach to maximum entropy. The breakdown of the QHE is also investigated: the critical current density compares well to that predicted by an existing theory. Finally, devices in which both electron and hole gases can be induced are investigated. However, it is shown that the two cannier species never co-exist. Design rules are presented which may allow more successful structures to be created. Results are presented which demonstrate the success and the utility of implanted contacts which selectively reach different regions of the structure. (author)

  6. Nonlinear longitudinal waves of interacting fields of deformation and defect concentration in germanium and silicon

    International Nuclear Information System (INIS)

    Mirzade, F. Kh.

    2006-01-01

    A system of equations is formulated to describe the self-consistent behavior of elastic displacement fields and the concentration field of point defects in irradiated crystals with a symmetry center (germanium, silicon). In accordance with the values of the defect relaxation times, the model evolution equations are derived, describing the steady-state nonlinear longitudinal waves, with regard to the flexoelectric effect. The effect is due to the dielectric polarization induced by nonuniform elastic deformations of the lattice. For a particular relationship between the coefficients of these equations, i.e., between the parameters of the subsystem of defects and those of the nonlinear elastic medium, the exact solutions are obtained, which describe the generation of solitons and low-intensity shock waves. The contributions of the strain-defect interaction and the flexoelectric effect to the linear velocity of sound and the dispersion properties of the medium are estimated

  7. Proton loss by nuclear inelastic interactions in germanium

    International Nuclear Information System (INIS)

    Carlson, R.F.; Cox, A.J.; Abegg, R.; Davison, N.E.; Hasell, D.K.; McCamis, R.H.; Nasr, T.N.; Van Oers, W.T.H.; Manitoba Univ., Winnipeg

    1981-01-01

    The probability of protons undergoing nuclear inelastic interactions while stopping in germanium has been measured in a direct counting experiment using protons with energies between 25 and 49 MeV incident on a germanium detector. These values have been determined to an accuracy of approximately +-2%. Calculatins of the proton reaction probability over the incident energy range 20-150 MeV have also been made, using previously reported proton total reaction cross sections. The experimental and calculated results agree to within +-1.8%. (orig.)

  8. Quantitative spectrographic determination of traces of germanium in lignite

    International Nuclear Information System (INIS)

    Martin, M.; Roca, M.

    1972-01-01

    A burning technique in a d.c. arc at 10 amp has been employed. The standards have been prepared from a natural lignite with a low germanium content. In order to enhance sensitivity, AgCl, K 2 SO 4 , CuF 2 , Sb 2 S 3 and Bi 2 S 3 have been tested as sweeping materials. Using 2% CuF 2 a detection limit of 1 ppm germanium is attainable. Bi, Cu, Sb and Sn have been studied as internal standards: the former leads to the, highest precision (1 6%. Results show good agreement with those obtained by the addition method. (Author) 6 refs

  9. In vitro binding of germanium to proteins of rice shoots

    International Nuclear Information System (INIS)

    Matsumoto, Hideaki; Takahashi, Eiichi

    1976-01-01

    The possibility of in vitro binding between proteins of rice shoots and germanium (Ge) was investigated. The proteins in mixtures of aqueous extracts of rice shoots and radioactive germanium ( 68 GeO 2 ) were fractionated. The binding of radioactivity to the proteins was observed even after 5 successive fractionation steps from the original mixtures. At the final fractionation step using polyacrylamide gel electrophoresis, a constant proportionality between protein concentration and associated radioactivity was found in most samples although not all. These results indicate that the binding of 68 Ge to proteins is not due to the simple adsorption by proteins. (auth.)

  10. Ultra-Pure Water and Extremophilic Bacteria interactions with Germanium Surfaces

    Science.gov (United States)

    Sah, Vasu R.

    Supported by a consortium of semiconductor industry sponsors, an international "TIE" project among 5 National Science Foundation (NSF) Industry/university Cooperative Research Centers discovered that a particular extremophilic microbe, Pseudomonas syzygii, persists in the UltraPure Water (UPW) supplies of chip fabrication facilities (FABs) and can bio-corrode germanium wafers to produce microbe-encased optically transparent crystals. Considered as potentially functional "biochips", this investigation explored mechanisms for the efficient and deliberate production of such microbe-germania adducts as a step toward later testing of their properties as sensors or switches in bioelectronic or biophotonic circuits. Recirculating UPW (Ultra-Pure Water) and other purified water, laminar-flow loops were developed across 50X20x1mm germanium (Ge) prisms, followed by subsequent examination of the prism surfaces using Multiple Attenuated Internal Reflection InfraRed (MAIR-IR) spectroscopy, Contact Potential measurements, Differential Interference Contrast Light Microscopy (DICLM), Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDS), and Electron Spectroscopy for Chemical Analysis (ESCA; XPS). P. syzygii cultures originally obtained from a working FAB at University of Arizona were successfully grown on R2A minimal nutrient media. They were found to be identical to the microbes in stored UPW from the same facility, such microbes routinely capable of nucleation and entrapment within GeO2 crystals on the Ge flow surfaces. Optimum flow rates and exposure times were 1 ml/minute (3.2 s-1 shear rate) for 4 days at room temperature, producing densest crystal arrays at the prism central zones 2-3 cm from the flow inlets. Other flow rates and exposure times have higher shear rate which induces a different nucleation mechanism and saturation of crystal formation. Nucleation events began with square and circular oxide deposits surrounding active attached bacteria

  11. Dimension stone

    Science.gov (United States)

    Dolley, T.P.

    2003-01-01

    Dimension stone can be defined as natural rock material quarried to obtain blocks or slabs that meet specifications as to size (width, length and thickness) and shape for architectural or engineering purposes. Color, grain texture and pattern, and surface finish of the stone are also normal requirements. Other important selection criteria are durability (based on mineral composition, hardness and past performance), strength and the ability of the stone to take a polish.

  12. Dislocation multiplication rate in the early stage of germanium plasticity

    Czech Academy of Sciences Publication Activity Database

    Fikar, J.; Dupas, Corinne; Kruml, Tomáš; Jacques, A.; Martin, J. L.

    400-401, - (2005), s. 431-434 ISSN 0921-5093. [Dislocations 2004. La Colle-sur-Loup, 13.09.2004-17.09.2004] Institutional research plan: CEZ:AV0Z2041904 Keywords : dislocation multiplication * germanium * constitutive modelling Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.347, year: 2005

  13. Direct observations of the vacancy and its annealing in germanium

    DEFF Research Database (Denmark)

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.

    2011-01-01

    Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

  14. Microwave Faraday effect in n-type germanium

    NARCIS (Netherlands)

    Bouwknegt, A.; Volger, J.

    The Faraday rotation, ellipticity and the accompanying magneto-absorption were determined from measurements with the crossed wave guide coupler device, at room temperature, at 24.9 GHz. The complex conductivity tensor elements of n-type germanium were deduced from this complete Faraday effect, with

  15. Effect of normal processes on thermal conductivity of germanium ...

    Indian Academy of Sciences (India)

    Abstract. The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between differ- ent phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and ...

  16. A catalyst-free synthesis of germanium nanowires obtained by ...

    Indian Academy of Sciences (India)

    A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both ...

  17. Solution-processable white-light-emitting germanium nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Naoto, E-mail: SHIRAHATA.Naoto@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2014-06-01

    This paper describes an efficient chemical route for the synthesis of visible light emitting nanocrystals of germanium (ncGe). The synthesis started by heating Ge(II) iodide at 300 °C in argon atmosphere. Spectroscopic characterizations confirmed the formation of diamond cubic lattice structures of ncGe. By grafting hydrophobic chains on the ncGe surface, the dispersions in nonpolar solvents of the ncGe became very stable. The as-synthesized ncGe showed the bluish white photoluminescence (PL) feature, but it was found that the PL spectrum is composed of many different emission spectra. Therefore, the color-tuning of white light emission is demonstrated through the witting removal of extra ncGe with unfavorable emission feature by making full use of column chromatographic techniques. - Highlights: • Visible light emitting nanocrystals of germanium was synthesized by chemical reduction of germanium iodide. • White light emission was achieved by control over size distribution of germanium nanocrystals. • Tuning the color of white light was achieved by separation of nanocrystals by emission.

  18. Noise and oscillations in gold-doped germanium photodiodes

    NARCIS (Netherlands)

    Bolwijn, P.T.; Rijst, C. v. d.; Ast, W.G. van; Lam, T.

    Considerable noise effects in excess of shot noise and oscillations found in commercially available, gold-doped germanium photodiodes have been investigated. The noise and oscillation effects occur in the photocurrent of reversely biased diodes at temperatures below about 100°K. The dependence of

  19. Effect of normal processes on thermal conductivity of germanium ...

    Indian Academy of Sciences (India)

    The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between different phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond ...

  20. Active noise canceling system for mechanically cooled germanium radiation detectors

    Science.gov (United States)

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  1. Cosmogenic activation in germanium double beta decay experiments

    International Nuclear Information System (INIS)

    Cebrian, S; Amare, J; Beltran, B; Carmona, J M; GarcIa, E; Gomez, H; Irastorza, I G; Luzon, G; MartInez, M; Morales, J; Solorzano, A Ortiz de; Pobes, C; Puimedon, J; Rodriguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

    2006-01-01

    A new estimate of the production rates of several long-lived isotopes cosmogenically induced in germanium is presented, paying attention to those products relevant in Double Beta Decay searches. Special care has been taken in the selection of reliable excitation functions

  2. Cosmogenic activation in germanium double beta decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Cebrian, S; Amare, J; Beltran, B; Carmona, J M; GarcIa, E; Gomez, H; Irastorza, I G; Luzon, G; MartInez, M; Morales, J; Solorzano, A Ortiz de; Pobes, C; Puimedon, J; Rodriguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A [Laboratorio de Fisica Nuclear y Altas Energias, Universidad de Zaragoza, 50009 (Spain)

    2006-05-15

    A new estimate of the production rates of several long-lived isotopes cosmogenically induced in germanium is presented, paying attention to those products relevant in Double Beta Decay searches. Special care has been taken in the selection of reliable excitation functions.

  3. Dangling-bond defects and hydrogen passivation in germanium

    Science.gov (United States)

    Weber, Justin R.

    2008-03-01

    The application of germanium in complementary metal-oxide semiconductor (CMOS) technology is hampered by high interface-state densities, the microscopic origin of which has remained elusive. Using first-principles calculations, we have investigated the atomic and electronic structure of prototype germanium dangling-bond defects [1]. The computational approach is based on density functional theory, and in order to overcome band-gap problems we have also performed quasiparticle calculations based on the GW approach. Surprisingly, the germanium dangling bonds give rise to electronic levels below the valence-band maximum. They therefore occur exclusively in the negative charge state, explaining why they have eluded observation with electron spin resonance. The associated fixed charge is likely responsible for threshold-voltage shifts and poor performance of n-channel transistors. At silicon/silicon dioxide interfaces, hydrogen is successfully used to passivate dangling-bond defects. We have therefore also investigated the interaction of hydrogen with germanium. In contrast to silicon and other semiconductors in which hydrogen behaves as an amphoteric impurity, interstitial hydrogen in germanium is stable only in the negative charge state, i.e., it behaves exclusively as an acceptor. Passivation of dangling bonds by hydrogen will therefore be ineffective, again explaining experimental observations. Other cases where unusual interfacial defects and problems with hydrogen passivation may occur will be discussed. Work performed in collaboration with A. Janotti, P. Rinke, and C. G. Van de Walle, and supported by the Semiconductor Research Corporation. 1. J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 91, 142101 (2007).

  4. Germanium detector studies in the framework of the GERDA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Budjas, Dusan

    2009-05-06

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

  5. Pulse shapes and surface effects in segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  6. Monte Carlo simulation of the X-ray response of a germanium microstrip detector with energy and position resolution

    CERN Document Server

    Rossi, G; Fajardo, P; Morse, J

    1999-01-01

    We present Monte Carlo computer simulations of the X-ray response of a micro-strip germanium detector over the energy range 30-100 keV. The detector consists of a linear array of lithographically defined 150 mu m wide strips on a high purity monolithic germanium crystal of 6 mm thickness. The simulation code is divided into two parts. We first consider a 10 mu m wide X-ray beam striking the detector surface at normal incidence and compute the interaction processes possible for each photon. Photon scattering and absorption inside the detector crystal are simulated using the EGS4 code with the LSCAT extension for low energies. A history of events is created of the deposited energies which is read by the second part of the code which computes the energy histogram for each detector strip. Appropriate algorithms are introduced to account for lateral charge spreading occurring during charge carrier drift to the detector surface, and Fano and preamplifier electronic noise contributions. Computed spectra for differen...

  7. Contribution of germanium dioxide to the thermal expansion characteristics of some borosilicate glasses and their corresponding glass-ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, H.; Salama, S.N.; Salman, S.M. [National Research Centre, Cairo (Egypt). Glass Research Dept.

    2002-07-01

    The thermal expansion characteristics of some lithium aluminium germanium borosilicate glasses and their crystalline solids have been investigated. The base glass composition was modified by partial replacement of germanium dioxide instead of silica. In some cases, however, TiO{sub 2} was also added to some selected glasses as a nucleation catalyst. Slight increase in the thermal expansion coefficient ({alpha}) values of the glasses and corresponding slight decrease in both transition (Tg) and softening (Ts) temperatures are detected by GeO{sub 2}/SiO{sub 2} replacements, however, the reverse results were recorded by TiO{sub 2} addition. The obtained data were correlated to the local structure changes induced by GeO{sub 2} or TiO{sub 2} and their contributions to the thermal expansion property of the glasses. On the crystallization, the expansivity of the glasses was markedly changed. It was greatly affected by crystallization of GeO{sub 2}-containing phases and aluminosilicate solid solutions together with the TiO{sub 2}-containing phases formed. The results obtained were explained in relation to the nature, composition and concentration of all phases formed in the glass-ceramics including a residual glass matrix. (orig.)

  8. High resolution gamma-ray spectroscopy at high count rates with a prototype High Purity Germanium detector

    Science.gov (United States)

    Cooper, R. J.; Amman, M.; Vetter, K.

    2018-04-01

    High-resolution gamma-ray spectrometers are required for applications in nuclear safeguards, emergency response, and fundamental nuclear physics. To overcome one of the shortcomings of conventional High Purity Germanium (HPGe) detectors, we have developed a prototype device capable of achieving high event throughput and high energy resolution at very high count rates. This device, the design of which we have previously reported on, features a planar HPGe crystal with a reduced-capacitance strip electrode geometry. This design is intended to provide good energy resolution at the short shaping or digital filter times that are required for high rate operation and which are enabled by the fast charge collection afforded by the planar geometry crystal. In this work, we report on the initial performance of the system at count rates up to and including two million counts per second.

  9. Gallium arsenide single crystal solar cell structure and method of making

    Science.gov (United States)

    Stirn, Richard J. (Inventor)

    1983-01-01

    A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

  10. Multiple Fluorine-Substituted Phosphate Germanium Fluorides and Their Thermal Stabilities.

    Science.gov (United States)

    Huang, Xia; Liu, Biao; Zhuang, Rong-Chuan; Pan, Yuanming; Mi, Jin-Xiao; Huang, Ya-Xi

    2016-12-05

    Anhydrous compounds are crucially important for many technological applications, such as achieving high performance in lithium/sodium cells, but are often challenging to synthesize under hydrothermal conditions. Herein we report that a modified solvo-/hydro-fluorothermal method with fluoride-rich and water-deficient condition is highly effective for synthesizing anhydrous compounds by the replacement of hydroxyl groups and water molecules with fluorine. Two anhydrous phosphate germanium fluorides, namely, Na 3 [GeF 4 (PO 4 )] and K 4 [Ge 2 F 9 (PO 4 )], with chainlike structures involving multiple fluorine substitutions, were synthesized using the modified solvo-/hydro-fluorothermal method. The crystal structure of Na 3 [GeF 4 (PO 4 )] is constructed by the common single chains ∞ 1 {[GeF 4 (PO 4 )] 3- } built from alternating GeO 2 F 4 octahedra and PO 4 tetrahedra. For K 4 [Ge 2 F 9 (PO 4 )], it takes the same single chain in Na 3 [GeF 4 (PO 4 )] as the backbone but has additional flanking GeOF 5 octahedra via an O-corner of the PO 4 groups, resulting in a dendrite zigzag single chain ∞ 1 {[Ge 2 F 9 (PO 4 )] 4- }. The multiple fluorine substitutions in these compounds not only force them to adopt the low-dimensional structures because of the "tailor effect" but also improve their thermal stabilities. The thermal behavior of Na 3 [GeF 4 (PO 4 )] was investigated by an in situ powder X-ray diffraction experiment from room temperature to 700 °C. The modified solvo-/hydro-fluorothermal method is also shown to be effective in producing the most germanium-rich compounds in the germanophosphate system.

  11. Defect-impurity interactions in irradiated germanium

    International Nuclear Information System (INIS)

    Cleland, J.W.; James, F.J.; Westbrook, R.D.

    1975-07-01

    Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

  12. Multiplying dimensions

    CERN Multimedia

    2013-01-01

    A few weeks ago, I had a vague notion of what TED was, and how it worked, but now I’m a confirmed fan. It was my privilege to host CERN’s first TEDx event last Friday, and I can honestly say that I can’t remember a time when I was exposed to so much brilliance in such a short time.   TEDxCERN was designed to give a platform to science. That’s why we called it Multiplying Dimensions – a nod towards the work we do here, while pointing to the broader importance of science in society. We had talks ranging from the most subtle pondering on the nature of consciousness to an eighteen year old researcher urging us to be patient, and to learn from our mistakes. We had musical interludes that included encounters between the choirs of local schools and will.i.am, between an Israeli pianist and an Iranian percussionist, and between Grand Opera and high humour. And although I opened the event by announcing it as a day off from physics, we had a quite brill...

  13. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Classen, Nathan Robert [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular β C-H insertion mechanism.

  14. Mechanically-cooled germanium detector using two stirling refrigerators

    International Nuclear Information System (INIS)

    Katagiri, Masaki; Kobayashi, Yoshii; Takahashi, Koji

    1996-01-01

    In this paper, we present a developed mechanically-cooled germanium gamma-ray detector using Stirling refrigerators. Two Stirling refrigerators having cooling faculty of 1.5W at 80K were used to cool down a germanium detector element to 77K instead of a dewar containing liquid nitrogen. An 145cm 3 (56.0mmf x 59.1 mml) closed-end Ge(I) detector having relative detection efficiency of 29.4% was attached at the refrigerators. The size of the detector was 60cml x 15cmh x 15cmw. The lowest cooling temperature, 70K was obtained after 8 hours operation. The energy resolutions for 1.33MeV gamma-rays and for pulser signals were 2.43keV and 1.84keV at an amplifier shaping time of 2μsec, respectively

  15. Development of neutron-transmutation-doped germanium bolometer material

    International Nuclear Information System (INIS)

    Palaio, N.P.

    1983-08-01

    The behavior of lattice defects generated as a result of the neutron-transmutation-doping of germanium was studied as a function of annealing conditions using deep level transient spectroscopy (DLTS) and mobility measurements. DLTS and variable temperature Hall effect were also used to measure the activation of dopant impurities formed during the transmutation process. In additioon, a semi-automated method of attaching wires on to small chips of germanium ( 3 ) for the fabrication of infrared detecting bolometers was developed. Finally, several different types of junction field effect transistors were tested for noise at room and low temperature (approx. 80 K) in order to find the optimum device available for first stage electronics in the bolometer signal amplification circuit

  16. The Future of Low Temperature Germanium as Dark Matter Detectors

    CERN Multimedia

    CERN. Geneva

    2009-01-01

    The Weakly Interactive Massive Particles (WIMPs) represent one of the most attractive candidates for the dark matter in the universe. With the combination of experiments attempting to detect WIMP scattering in the laboratory, of searches for their annihilation in the cosmos and of their potential production at the LHC, the next five years promise to be transformative. I will review the role played so far by low temperature germanium detectors in the direct detection of WIMPs. Because of its high signal to noise ratio, the simultaneous measurement of athermal phonons and ionization is so far the only demonstrated approach with zero-background. I will argue that this technology can be extrapolated to a target mass of the order of a tonne at reasonable cost and can keep playing a leading role, complementary to noble liquid technologies. I will describe in particular GEODM, the proposed Germanium Observatory for Dark Matter at the US Deep Underground Science and Engineering Laboratory (DUSEL).

  17. Germanium-doped gallium phosphide obtained by neutron irradiation

    Science.gov (United States)

    Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

    1993-08-01

    Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

  18. In-Situ Pressure Measurements During the Detached Growth of Germanium

    Science.gov (United States)

    Volz, M. P.; Palosz, W.; Szofran, F. R.

    2003-01-01

    Crystal growth by the vertical Bridgman method in which there is little or no contact between the wall and the crystal has been termed detached solidification. Detachment has been observed frequently in previous microgravity experiments, and has been reported under some terrestrial conditions as well. It is expected that detachment can be conditioned by establishing an appropriate pressure difference below and above the melt. To test this hypothesis, an experimental technique has been developed to measure this pressure difference during the growth of germanium by the vertical Bridgman method. The apparatus allows for both monitoring the pressures and actively controlling them during growth. For a given melt height, there is a maximum pressure difference attainable before gas bubbles up through the melt. This maximum pressure increases with increasing melt height. As the melt height approaches zero, the maximum pressure difference, about 20 mbar in these experiments, is determined by the surface tension and gap width of the meniscus at the bottom of the melt.

  19. Strain-induced changes to the electronic structure of germanium

    KAUST Repository

    Tahini, H. A.

    2012-04-17

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

  20. Fabrication techniques for reverse electrode coaxial germanium nuclear radiation detectors

    International Nuclear Information System (INIS)

    Hansen, W.L.; Haller, E.E.

    1980-11-01

    Germanium detectors with reverse polarity coaxial electrodes have been shown to exhibit improved resistance to radiation damage as compared with conventional electrode devices. However, the production of reverse electrode devices involves the development of new handling and fabrication techniques which has limited their wider application. We have developed novel techniques which lead to a device which is simple to fabricate, environmentally passivated and surface state adjusted

  1. Strain-induced changes to the electronic structure of germanium.

    Science.gov (United States)

    Tahini, H; Chroneos, A; Grimes, R W; Schwingenschlögl, U; Dimoulas, A

    2012-05-16

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.

  2. Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

    International Nuclear Information System (INIS)

    Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

    2007-01-01

    Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

  3. Determination of carbon and nitrogen in silicon and germanium

    International Nuclear Information System (INIS)

    Gebauhr, W.; Martin, J.

    1975-01-01

    The essential aim of this study is to examine the various technical and economic problems encountered in the determination of carbon and nitrogen in silicon and germanium, for this is in a way an extension of the discussion concerning the presence of oxygen in these two elements. The greater part of the study is aimed at drawing up a catalogue of the methods of analysis used and of the results obtained so far

  4. The germanium wall of the GEM detector system GEM Collaboration

    International Nuclear Information System (INIS)

    Betigeri, M.; Biakowski, E.; Bojowald, H.; Budzanowski, A.; Chatterjee, A.; Drochner, M.; Ernst, J.; Foertsch, S.; Freindl, L.; Frekers, D.; Garske, W.; Grewer, K.; Hamacher, A.; Igel, S.; Ilieva, J.; Jarczyk, L.; Jochmann, M.; Kemmerling, G.; Kilian, K.; Kliczewski, S.; Klimala, W.; Kolev, D.; Kutsarova, T.; Lieb, J.; Lippert, G.; Machner, H.; Magiera, A.; Nann, H.; Pentchev, L.; Plendl, H.S.; Protic, D.; Razen, B.; Rossen, P. von; Roy, B.J.; Siudak, R.; Smyrski, J.; Srikantiah, R.V.; Strzakowski, A.; Tsenov, R.; Zolnierczuk, P.A.; Zwoll, K.

    1999-01-01

    A stack of annular detectors made of high-purity germanium was developed. The detectors are position sensitive with radial structures. The first one ('Quirl') is double-sided position sensitive defining 40,000 pixels, the following three (E1, E2 and E3) have 32 wedges each. The Quirl acts as tracker while the other three act as calorimeter. The stack was successfully operated in meson production reactions close to threshold

  5. Characterization of the sub-keV Germanium detector

    Science.gov (United States)

    Singh, M. K.; Singh, Manoj K.; Sharma, V.; Singh, L.; Singh, V.; Subrahmanyam, V. S.; Soma, A. K.; Kiran Kumar, G.; Wong, H. T.

    2018-03-01

    Germanium ionization detectors having sensitivities as low as 100 eV open new windows for the studies of neutrino and dark matter physics. This novel detector demands overcoming several challenges at both hardware and software levels. The amplitude of physics signals is comparable to those due to fluctuations of the pedestal electronic noise in low energy range. Therefore, it is important to study the low energy calibration properly. In this article, we focus on the optimization of the calibration scheme.

  6. Photoluminescent polysaccharide-coated germanium(IV) oxide nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Lobaz, Volodymyr; Rabyk, Mariia; Pánek, Jiří; Doris, E.; Nallet, F.; Štěpánek, Petr; Hrubý, Martin

    2016-01-01

    Roč. 294, č. 7 (2016), s. 1225-1235 ISSN 0303-402X R&D Projects: GA MŠk(CZ) 7AMB14FR027; GA ČR(CZ) GA13-08336S; GA MZd(CZ) NV15-25781A Institutional support: RVO:61389013 Keywords : germanium oxide nanoparticles * polysaccharide coating * photoluminescent label Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.723, year: 2016

  7. Diffusion of tin in germanium: A GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  8. The investigation of germanium based compounds, transition metals and isoflavones within foods

    OpenAIRE

    Dowling, Stephen

    2010-01-01

    The body of work here looks not only at how germanium was present in foods but also the ascertainment of chelation behaviour of germanium compounds and also transition metals with flavonoids. The chelation of germanium with flavonoids, or particularly isoflavones, is a completely novel area and gave some interesting results for chelation with isoflavones with transition metals, an area of research that was completely underexploited until recently. (refer to appendix 1) The Fourier Tran...

  9. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lingen; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

    2016-07-15

    Highlights: • An environmental friendly vacuum reduction metallurgical process is proposed. • Rare and valuable metal germanium from coal fly ash is recycled. • Residues are not a hazardous material and can be further recycled. • A germanium recovery ratio of 94.64% is obtained in pilot scale experiments. - Abstract: The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173 K and 10 Pa with 10 wt% coke addition for 40 min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473 K, 1–10 Pa and heating time 40 min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes.

  10. Evaluation of peak-to-total ratio for germanium detectors

    International Nuclear Information System (INIS)

    Watanabe, Tamaki; Oi, Yoshihiro; Taki, Mitsumasa; Kawasaki, Katsuya; Yoshida, Makoto

    1999-01-01

    An equation for the peak-to-total ratio, P, of a germanium detector is proposed in the following form. P=ε p /ε t +a(V/A)+b(V/A) 2 /2 where ε p /ε t is the ratio of the photoelectric to the total detection efficiency for a germanium detector, V/A is the volume-to-surface ratio of the detector, and the parameters of a and b are experimentally given as a function of incident photon energy. The first term in the right side of the equation expresses the fractional single photoelectric-to-total interaction between photons and the detector. The second and third terms correspond to the multiple interactions. The peak-to-total ratios for the germanium detector with a sensitive volume up to 200 cm 3 were calculated by the equation. They coincide with the experimental values to within an uncertainty of several percent in the energy region 0.3-3 MeV

  11. Controlled Spalling in (100)-Oriented Germanium by Electroplating

    Science.gov (United States)

    Crouse, Dustin Ray

    This work investigates controlled spalling as a method to exfoliate thin films of various thickness from rigid, crystalline germanium (Ge) substrates and to enable substrate reuse for III-V single junction photovoltaic devices. Technological limitations impeding wide-spread adoption of flexible electronics and high-material-cost photovoltaic devices have motivated significant interest in a method to remove devices from their substrates. DC magnetron sputtering has been previously utilized to remove semiconductor devices of various thicknesses from Ge substrates, but this method is expensive and time-consuming. Controlled spalling via high-speed electrodeposition is a fast, inexpensive exfoliation method that utilizes a tensile-stressed metal layer deposited on a (100)-oriented Ge substrate and an external force to mechanically propagate a crack parallel to the surface at a desired depth in the substrate material. Suo and Hutchinson's quantitative models describe critical combinations of film thickness and strain mismatch between a film and substrate at which a stressed bilayer system spontaneously spalls; however, fine control over a wide steady-state spall depth range has been limited by the ability to experimentally tailor strain mismatch caused by residual stress within deposited stressor layers. This work investigates the effect of tuning electroplating current density and electrolyte chemistry on the residual stress in a nickel stressor film and their impact on the achievable spall depth range. Steady-state spall depth is found to increase with increasing stressor layer thickness and decrease with increasing residual stress. By tailoring residual stress through adjusting plating conditions and the electrolyte's phosphorous concentration, wide control over spall depth within Ge substrates from sub-micron to 76microm-thicknesses were achieved. To assess the viability of utilizing controlled spalling for substrate reuse, this dissertation demonstrates the first

  12. Effects of crystal defects on the diffuse scattering of X-rays

    International Nuclear Information System (INIS)

    Kremser, R.

    1974-01-01

    This thesis concerns with the influence of crystal defects in germanium-drifted silicium and in α=quartz on the intensity of the diffuse X-ray scattering. The experiments were performed at low and high temperatures to show the effect of the atomic thermal motion on the intensity of the diffuse maxima. The comparison of the results for pure silicium and for the germanium-drifted crystal gives information about the relation between the frequency-spectra and the defects of the drifted silicium. For α-quarts it was not possible to relate unequivocally the observed changes in the intensity to individual defects. (C.R.)

  13. The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

    Science.gov (United States)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

    2018-01-01

    The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

  14. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  15. Nephrotoxicity in humans by the ultratrace element germanium.

    Science.gov (United States)

    Schauss, A G

    1991-01-01

    Acute renal failure (ARF) or renal dysfunction (RD) associated with germanium-induced nephrotoxicity has been reported in 18 patients since 1982. In 2 of these cases the patients died of acute renal and cardiogenic failure. In 17 of 18 cases biopsies showed vacuolar degeneration in renal tubular epithelial cells in the absence of glomerular changes, without proteinuria or hematuria. Accumulated elemental Ge intake in 17 patients over a period of 4 to 36 months ranged between 16 and 328 g, or more than 100 to 2000 times the average estimated dietary intake of Ge for man (1.5 mg/d; range 0.40 to 3.40 mg/d). The biological half-life of Ge is 4.5 days for kidneys, the highest retention level of any organ. The mean concentration of Ge in healthy adult kidneys is 9.0 mg/kg wet weight. In 3 patients studied with Ge-induced RD or ARF, urinary Ge excretion was 9, 15, and 60 ng/mL, compared to greater than 5 ng/mL in healthy controls, and remained elevated even 12 months after discontinuing supplemental Ge intake. The mechanism for Ge-induced nephrotoxicity remains unknown, although the suspected cause is the inorganic Ge salts, such as germanium dioxide. Sufficient evidence for a role of organogermanium compounds, such as carboxyethyl germanium sesquioxide or citrate-lactate germanate, in Ge-induced nephrotoxicity remains lacking. The recent introduction of over-the-counter Ge "nutritional" supplements in some countries increases the risk of additional cases of Ge-induced nephrotoxicity, especially if appreciable levels of inorganic Ge salts are present and consumed for long periods (greater than 3 months) at levels above the average daily estimated dietary intake for Ge.(ABSTRACT TRUNCATED AT 250 WORDS)

  16. Performance of the Ultra-High Rate Germanium (UHRGe) System

    Energy Technology Data Exchange (ETDEWEB)

    Fast, James E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Dion, Michael P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Rodriguez, Douglas C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); VanDevender, Brent A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wood, Lynn S. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wright, Michael E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-12-01

    This report describes the final performance achieved with the detector system developed for the Ultra High Rate Germanium (UHRGe) project. The system performance has been evaluated at low, moderate and high rates and includes the performance of real-time analysis algorithms running in the FPGA of the data acquisition system. This performance is compared to that of offline analyses of streaming waveform data collected with the same data acquisition system the performance of a commercial Multi-Channel Analyzer designed for high-resolution spectroscopy applications, the Canberra LYNX.

  17. Point defect engineering strategies to retard phosphorous diffusion in germanium.

    Science.gov (United States)

    Tahini, H A; Chroneos, A; Grimes, R W; Schwingenschlögl, U; Bracht, H

    2013-01-07

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration.

  18. Self-absorption corrections for well-type germanium detectors

    International Nuclear Information System (INIS)

    Appleby, P.G.; Richardson, N.; Nolan, P.J.

    1992-01-01

    Corrections for self-absorption are of vital importance to accurate determination by gamma spectrometry of radionuclides such as 210 Pb, 241 Am and 234 Th which emit low energy gamma radiation. A simple theoretical model for determining the necessary corrections for well-type germanium detectors is presented. In this model, self-absorption factors are expressed in terms of the mass attenuation coefficient of the sample and a parameter characterising the well geometry. Experimental measurements of self-absorption are used to evaluate the model and to determine a semi-empirical algorithm for improved estimates of the geometrical parameter. (orig.)

  19. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  20. Multiple pulse traveling wave excitation of neon-like germanium

    International Nuclear Information System (INIS)

    Moreno, J. C.; Nilsen, J.; Silva, L. B. da

    1995-01-01

    Traveling wave excitation has been shown to significantly increase the output intensity of the neon-like germanium x-ray laser. The driving laser pulse consisted of three 100 ps Gaussian laser pulses separated by 400 ps. Traveling wave excitation was employed by tilting the wave front of the driving laser by 45 degrees to match the propagation speed of the x-ray laser photons along the length of the target. We show results of experiments with the traveling wave, with no traveling wave, and against the traveling wave and comparisons to a numerical model. Gain was inferred from line intensity measurements at two lengths

  1. Effect of germanium dioxide on growth of Spirulina platensis

    Science.gov (United States)

    Cao, Ji-Xiang

    1996-12-01

    This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

  2. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  3. Fundamental aspects of nucleation and growth in the solution-phase synthesis of germanium nanocrystals

    KAUST Repository

    Codoluto, Stephen C.

    2010-01-01

    Colloidal Ge nanocrystals (NCs) were synthesized via the solution phase reduction of germanium(ii) iodide. We report a systematic investigation of the nanocrystal nucleation and growth as a function of synthesis conditions including the nature of coordinating solvents, surface bound ligands, synthesis duration and temperature. NC synthesis in reaction environments with weakly bound phosphine surface ligand led to the coalescence of nascent particles leading to ensembles with broad lognormal particle diameter distributions. Synthesis in the presence of amine or alkene ligands mitigated particle coalescence. High-resolution transmission electron micrographs revealed that NCs grown in the presence of weak ligands had a high crystal defect density whereas NCs grown in amine solutions were predominantly defect-free. We applied infrared spectroscopy to study the NC surface chemistry and showed that alkene ligands project the NCs from surface oxidation. Photoluminescence spectroscopy measurements showed that alkene ligands passivate surface traps, as indicated by infrared fluorescence, conversely oxidized phosphine and amine passivated NCs did not fluoresce. © 2010 The Royal Society of Chemistry.

  4. Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

    Science.gov (United States)

    Buckley, D. H.; Spalvins, T.

    1977-01-01

    Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

  5. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  6. Germanium-76 Isotope Separation by Cryogenic Distillation. Final Report

    International Nuclear Information System (INIS)

    Stohler, Eric

    2007-01-01

    The current separation method for Germanium isotopes is electromagnetic separation using Calutrons. The Calutrons have the disadvantage of having a low separation capacity and a high energy cost to achieve the separation. Our proposed new distillation method has the advantage that larger quantities of Germanium isotopes can be separated at a significantly lower cost and in a much shorter time. After nine months of operating the column that is 1.5 meter in length, no significant separation of the isotopes has been measured. We conclude that the length of the column we have been using is too short. In addition, other packing material than the 0.16 inch Propak, 316 ss Protruded metal packing that we used in the column, should be evaluated which may have a better separation factor than the 0.16 inch Propak, 316 ss Protruded metal packing that has been used. We conclude that a much longer column - a minimum of 50 feet length - should be built and additional column packing should be tested to verify that isotopic separation can be achieved by cryogenic distillation. Even a longer column than 50 feet would be desirable.

  7. An ultralow background germanium gamma-ray spectrometer

    International Nuclear Information System (INIS)

    Reeves, R.H.; Brodzinski, R.L.; Hensley, W.K.; Ryge, P.

    1984-01-01

    The monitoring of minimum detectable activity is becoming increasingly important as environmental concerns and regulations require more sensitive measurement of the radioactivity levels in the workplace and the home. In measuring this activity, however, the background becomes one of the limiting factors. Anticoincidence systems utilizing both NaI(T1) and plastic scintillators have proven effective in reducing some components of the background, but radiocontaminants in the various regions of these systems have limited their effectiveness, and their cost is often prohibitive. In order to obtain a genuinely low background detector system, all components must be free of detectable radioactivity, and the cosmic ray produced contribution must be significantly reduced. Current efforts by the authors to measure the double beta decay of Germanium 76 as predicted by Grand Unified Theories have resulted in the development of a high resolution germanium diode gamma spectrometer with an exceptionally low background. This paper describes the development of this system, outlines the configuration and operation of its preamplifier, linear amplifier, analog-to-digital converter, 4096-channel analyzer, shielding consisting of lead-sandwiched plastic scintillators wrapped in cadmium foil, photomultiplier, and its pulse generator and discriminator, and then discusses how the system can be utilized to significantly reduce the background in high resolution photon spectrometers at only moderate cost

  8. Pulsed laser ablation of Germanium under vacuum and hydrogen environments at various fluences

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Hassan [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Rafique, Muhammad Shahid [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Dawood, Asadullah; Akram, Mahreen; Mahmood, Khaliq; Hayat, Asma; Ahmad, Riaz; Hussain, Tousif [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics (NILOP), Islamabad (Pakistan)

    2015-07-30

    Highlights: • Germanium targets were exposed under vacuum and H{sub 2} environment by nanosecond laser pulses. • The effect of laser fluence and ambient environment has been investigated. • The surface morphology is investigated by SEM analysis. • Raman and FTIR Spectroscopy are performed to reveal structural modification. • Electrical conductivity is probed by four probe method. - Abstract: Laser fluence and ambient environment play a significant role for the formation and development of the micro/nano-structures on the laser irradiated targets. Single crystal (1 0 0) Germanium (Ge) has been ablated under two environments of vacuum (10{sup −3} Torr) and hydrogen (100 Torr) at various fluences ranging from 4.5 J cm{sup −2} to 6 J cm{sup −2}. For this purpose KrF Excimer laser with wavelength of 248 nm, pulse duration of 18 ns and repetition rate of 20 Hz has been employed. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets was explored by Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. Electrical conductivity of the irradiated Ge is measured by four probe method. SEM analysis exhibits the formation of laser-induced periodic surface structures (LIPSS), cones and micro-bumps in both ambient environments (vacuum and hydrogen). The formation as well as development of these structures is strongly dependent upon the laser fluence and environmental conditions. The periodicity of LIPSS or ripples varies from 38 μm to 60 μm in case of vacuum whereas in case of hydrogen environment, the periodicity varies from 20 μm to 45 μm. The difference in number of ripples and periodicity as well as in shape and size of cones and bumps in vacuum and hydrogen is explained on the basis of confinement and shielding effect of plasma. FTIR spectroscopy reveals that no new bands are formed for laser ablated Ge under vacuum, whereas C−H stretching vibration band is

  9. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

    Science.gov (United States)

    Toriumi, Akira; Nishimura, Tomonori

    2018-01-01

    CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is expected. This size scaling will end sooner or later, however, because the typical size is approaching the atomic distance level in crystalline Si. In addition, it is said that electron transport in FETs is ballistic or nearly ballistic, which means that the injection velocity at the virtual source is a physical parameter relevant for estimating the driving current. Channel-materials with higher carrier mobility than Si are nonetheless needed, and the carrier mobility in the channels is a parameter important with regard to increasing the injection velocity. Although the density of states in the channel has not been discussed often, it too is relevant for estimating the channel current. Both the mobility and the density of states are in principle related to the effective mass of the carrier. From this device physics viewpoint, we expect germanium (Ge) CMOS to be promising for scaling beyond the Si CMOS limit because the bulk mobility values of electrons and holes in Ge are much higher than those of electrons and holes in Si, and the electron effective mass in Ge is not much less than that in III-V compounds. There is a debate that Ge should be used for p-MOSFETs and III-V compounds for n-MOSFETs, but considering that the variability or nonuniformity of the FET performance in today’s CMOS LSIs is a big challenge, it seems that much more attention should be paid to the simplicity of the material design and of the processing steps. Nevertheless, Ge faces a number of challenges even in case that only the FET level is concerned. One of the big problems with Ge CMOS technology has been its poor performance in n-MOSFETs. While the hole mobility in p-FETs has been improved, the electron mobility in the inversion layer of Ge FETs remains a serious concern. If this is due to the inherent properties of Ge, only p-MOSFETs might be used for device applications. To make Ge CMOS devices

  10. Analytical product study of germanium-containing medicine by different ICP-MS applications.

    Science.gov (United States)

    Krystek, Petra; Ritsema, Rob

    2004-01-01

    For several years organo-germanium containing medicine has been used for special treatments of e.g. cancer and AIDS. The active substances contain germanium as beta-carboxyethylgermanium sesquioxide ((GeCH2CH2COOH)203/"Ge-132"), spirogermanium, germanium-lactate-citrate or unspecified forms. For humans, germanium is not essential and in general the toxicity of the mentioned organo-germanium compounds is low. Acute and chronic toxic effects of inorganic germanium dioxide have been demonstrated. It is obvious that especially inorganic germanium has a higher potential of negative effects. Therefore, a widespread analytical product control is indispensable. Inductively coupled plasma mass spectrometry (ICP-MS) is the preferred technique and different applications were developed for controlling various parameters: (i) A speciation method using high performance liquid chromatography (HPLC) coupled with quadrupole (Q-) ICP-MS was developed for the identification of organo-germanium species in medicine. (ii) The nuclear magnetic resonance (NMR) technique was applied to confirm the molecular structure and to determine the molecule concentration. (iii) The total concentration of germanium in the medicine was determined in the diluted sample by high resolution (HR-) ICP-MS. (iv) For a general overview, a multi-element screening method of 56 elements with HR-ICP-MS was developed. The semi-quantitative mode was used for quantification and elements of higher abundance are reported. (v) Investigations about matrix-based interferences on masses of isotopes, which are generally determinable without remarkable problems. Isotopes like e.g. 85Rb, 88Sr, 89y, 90Zr, 93Nb and the isotopes of Ba are strongly interfered by different Ge-based molecules and need to be analysed in a higher resolution mode than used for other common matrices.

  11. Reliability assessment of germanium gate stacks with promising initial characteristics

    Science.gov (United States)

    Lu, Cimang; Lee, Choong Hyun; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2015-02-01

    This work reports on the reliability assessment of germanium (Ge) gate stacks with promising initial electrical properties, with focus on trap generation under a constant electric stress field (Estress). Initial Ge gate stack properties do not necessarily mean highly robust reliability when it is considered that traps are newly generated under high Estress. A small amount of yttrium- or scandium oxide-doped GeO2 (Y-GeO2 or Sc-GeO2, respectively) significantly reduces trap generation in Ge gate stacks without deterioration of the interface. This is explained by the increase in the average coordination number (Nav) of the modified GeO2 network that results from the doping.

  12. Long-wavelength germanium photodetectors by ion implantation

    International Nuclear Information System (INIS)

    Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

    1990-11-01

    Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

  13. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads......We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...... to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I ) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI...

  14. Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications

    Science.gov (United States)

    Shen, Jie; Liu, Bo; Song, Zhitang; Xu, Cheng; Rao, Feng; Liang, Shuang; Feng, Songlin; Chen, Bomy

    2008-01-01

    This work reports on the performance improvement of a chalcogenide random access memory device by applying germanium nitride as an interfacial layer. The device with an 8-nm-thick GeN film was fabricated using standard 0.18 µm complementary metal oxide semiconductor technology. The as-deposited GeN is in the amorphous state and has a smooth surface. An electrical test showed that this N-deficient layer induces a lower threshold voltage during the operation. It is believed that the reduction mainly originated from the excellent interfacial properties, high electrical resistivity, and low thermal conductivity of GeN, which is would be a prospective interfacial material in CRAM devices.

  15. Creating ligand-free silicon germanium alloy nanocrystal inks.

    Science.gov (United States)

    Erogbogbo, Folarin; Liu, Tianhang; Ramadurai, Nithin; Tuccarione, Phillip; Lai, Larry; Swihart, Mark T; Prasad, Paras N

    2011-10-25

    Particle size is widely used to tune the electronic, optical, and catalytic properties of semiconductor nanocrystals. This contrasts with bulk semiconductors, where properties are tuned based on composition, either through doping or through band gap engineering of alloys. Ideally, one would like to control both size and composition of semiconductor nanocrystals. Here, we demonstrate production of silicon-germanium alloy nanoparticles by laser pyrolysis of silane and germane. We have used FTIR, TEM, XRD, EDX, SEM, and TOF-SIMS to conclusively determine their structure and composition. Moreover, we show that upon extended sonication in selected solvents, these bare nanocrystals can be stably dispersed without ligands, thereby providing the possibility of using them as an ink to make patterned films, free of organic surfactants, for device fabrication. The engineering of these SiGe alloy inks is an important step toward the low-cost fabrication of group IV nanocrystal optoelectronic, thermoelectric, and photovoltaic devices.

  16. Formation of Tensilely Strained Germanium-on-Insulator

    Science.gov (United States)

    Hoshi, Yusuke; Sawano, Kentarou; Hamaya, Kohei; Miyao, Masanobu; Shiraki, Yasuhiro

    2012-01-01

    We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices.

  17. Gamma ray polarimetry using a position sensitive germanium detector

    CERN Document Server

    Kroeger, R A; Kurfess, J D; Phlips, B F

    1999-01-01

    Imaging gamma-ray detectors make sensitive polarimeters in the Compton energy regime by measuring the scatter direction of gamma rays. The principle is to capitalize on the angular dependence of the Compton scattering cross section to polarized gamma rays and measure the distribution of scatter directions within the detector. This technique is effective in a double-sided germanium detector between roughly 50 keV and 1 MeV. This paper reviews device characteristics important to the optimization of a Compton polarimeter, and summarizes measurements we have made using a device with a 5x5 cm active area, 1 cm thickness, and strip-electrodes on a 2 mm pitch.

  18. Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

    Science.gov (United States)

    Fujiwara, Atomu; Sato, Yuichi

    2018-01-01

    The growth of gallium nitride-based nanopillar-shaped crystals on the multicrystalline silicon substrate that is widely employed in solar cells is presented here for the first time. The nanopillar-shaped crystals are successfully grown on the multicrystalline substrate in a manner similar to the structures grown on other substrates. Structural variations and a highly enhanced band edge emission in the photoluminescence spectrum have been observed using germanium doping.

  19. Germanium microstrip detectors with 50 and 100 μm pitch

    International Nuclear Information System (INIS)

    Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bottigli, U.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Raso, G.; Ristori, L.; Scribano, A.; Stefanini, A.; Tenchini, R.; Tonelli, G.; Triggiani, G.; Haller, E.E.; Hansen, W.L.; Luke, P.N.

    1984-01-01

    Multi-electrode germanium detectors are being used as an active target for decay path measurements of charmed mesons. The procedure used to fabricate such detectors is described and a brief analysis of their performance is given. (orig.)

  20. Silicon-Germanium Front-End Electronics for Space-Based Radar Applications

    Data.gov (United States)

    National Aeronautics and Space Administration — Over the past two decades, Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology has emerged as a strong platform for high-frequency...

  1. Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

    Science.gov (United States)

    Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

    1997-01-01

    A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

  2. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

  3. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  4. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

  5. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  6. A Low Noise 64x64 Germanium Array for Far IR Astronomy, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four...

  7. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    OpenAIRE

    Alkhatib, Amro; Nayfeh, Ammar

    2013-01-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10?nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum ...

  8. DIFFERENT DIMENSIONS OF TEAMS

    OpenAIRE

    Goparaju Purna SUDHAKAR

    2013-01-01

    Popularity of teams is growing in 21st Century. Organizations are getting their work done through different types of teams. Teams have proved that the collective performance is more than the sum of the individual performances. Thus, the teams have got different dimensions such as quantitative dimensions and qualitative dimensions. The Quantitative dimensions of teams such as team performance, team productivity, team innovation, team effectiveness, team efficiency, team decision making and tea...

  9. Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

    Directory of Open Access Journals (Sweden)

    Saikiran eVadavalli

    2014-10-01

    Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

  10. Elasticity of some mantle crystal structures. II.

    Science.gov (United States)

    Wang, H.; Simmons, G.

    1973-01-01

    The single-crystal elastic constants are determined as a function of pressure and temperature for rutile structure germanium dioxide (GeO2). The data are qualitatively similar to those of rutile TiO2 measured by Manghnani (1969). The compressibility in the c direction is less than one-half that in the a direction, the pressure derivative of the shear constant is negative, and the pressure derivative of the bulk modulus has a relatively high value of about 6.2. According to an elastic strain energy theory, the negative shear modulus derivative implies that the kinetic barrier to diffusion decreases with increasing pressure.

  11. Experimental verification of agreement between thermal and real time visual melt-solid interface positions in vertical Bridgman grown germanium

    Science.gov (United States)

    Barber, P. G.; Fripp, A. L.; Debnam, W. J.; Woodell, G.; Berry, R. F.; Simchick, R. T.

    1996-03-01

    Measurements of the liquid-solid interface position during crystal growth were made by observing the discontinuity of the temperature gradient with movable thermocouples in a centerline, quartz capillary placed inside a sealed quartz ampoule of germanium in a vertical Bridgman furnace. Simultaneously, in situ, real time visual observations, using X-ray imaging technology, determined the position of the melt-solid interface. The radiographically detected interface position was several millimeters from the thermal interface position and the direction of displacement depended upon the direction of thermocouple insertion. Minimization of this spurious heat flow was achieved by using an unclad thermocouple that had each of its two wire leads entering the capillary from different ends of the furnace. Using this configuration the visual interface coincided with the thermal interface. Such observations show the utility of using in situ, real time visualization to record the melt-solid interface shape and position during crystal growth; and they suggest improvements in furnace and ampoule designs for use in high thermal gradients.

  12. Dimensions of Creative Evaluation

    DEFF Research Database (Denmark)

    Christensen, Bo; Ball, Linden J.

    2016-01-01

    We examined evaluative reasoning taking place during expert ‘design critiques’. We focused on key dimensions of creative evaluation (originality, functionality and aesthetics) and ways in which these dimensions impact reasoning strategies and suggestions offered by experts for how the student could...... continue. Each dimension was associated with a specific underpinning ‘logic’ determining how these dimensions were evaluated in practice. Our analysis clarified how these dimensions triggered reasoning strategies such as running mental simulations or making design suggestions, ranging from ‘go...

  13. Experimental study on the CsI (Tl) crystal anti-compton detector in CDEX

    International Nuclear Information System (INIS)

    Liu Shukui; Yue Qian; Tang Changjian

    2012-01-01

    CDEX (China Dark matter Experiment) Collaboration will carry out direct search for dark matter with Ultra-Low Energy Threshold High Purity germanium (ULE-HPGe) detector at CJPL (China Jinping deep underground Laboratory). Before underground research, some experiments of the CsI (Tl) crystal Anti-Compton detector have been done on the ground, including light guide choice, wrapping material choice, height uniformity of CsI (Tl) crystal, side uniformity of CsI (Tl) crystal and the test results of all the crystals. Through the preliminary work on the ground, we have got some knowledge of the anti-compton detector and prepared for the underground experiment. (authors)

  14. Crystals in crystals

    DEFF Research Database (Denmark)

    Christensen, Claus H.; Schmidt, I.; Carlsson, A.

    2005-01-01

    A major factor governing the performance of catalytically active particles supported on a zeolite carrier is the degree of dispersion. It is shown that the introduction of noncrystallographic mesopores into zeolite single crystals (silicalite-1, ZSM-5) may increase the degree of particle dispersion...... of the zeolite particles, particularly after thermal treatment. When using mesoporous zeolites, the particles were evenly distributed throughout the mesopore system of the zeolitic support, even after calcination, leading to nanocrystals within mesoporous zeolite single crystals....

  15. The construction of the CMS electromagnetic calorimeter: automatic measurements of the physics parameters of PWO crystals

    CERN Multimedia

    2005-01-01

    Crystal properties (dimensions, optical transmission, light yield) are automatically measured. The pictures show different measurement stations of the automatic machine. Crystals are measured on trays containing five crystals each.

  16. User Experience Dimensions

    DEFF Research Database (Denmark)

    Lykke, Marianne; Jantzen, Christian

    2016-01-01

    The present study develops a set of 10 dimensions based on a systematic understanding of the concept of experience as a holistic psychological. Seven of these are derived from a psychological conception of what experiencing and experiences are. Three supplementary dimensions spring from...... the observation that experiences apparently have become especially valuable phenomena in Western societies. The 10 dimensions are tried out in a field study at the Center for Art and Media (ZKM) in Germany with the purpose to study their applicability in the evaluation of interactive sound archives. 29 walk......-alongs were carried out with 58 museums visitors. Our analysis showed that it was possible to identify the 10 experience dimensions in the study material. Some dimensions were expressed more frequently than others. The distribution of expressed dimensions and the content of the user comments provided a clear...

  17. Thermal stability of germanium-tin (GeSn) fins

    Science.gov (United States)

    Lei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Masudy-Panah, Saeid; Tan, Chuan Seng; Tok, Eng Soon; Gong, Xiao; Yeo, Yee-Chia

    2017-12-01

    We investigate the thermal stability of germanium-tin (Ge1-xSnx) fins under rapid thermal annealing in N2 ambient. The Ge1-xSnx fins were formed on a GeSn-on-insulator substrate and were found to be less thermally stable than blanket Ge1-xSnx films. The morphology change and material quality of the annealed Ge1-xSnx fin are investigated using scanning electron microscopy, Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. Obvious degradation of crystalline quality of the Ge0.96Sn0.04 fin was observed, and a thin Ge layer was formed on the SiO2 surface near the Ge0.96Sn0.04 fin region after 500 °C anneal. A model was proposed to explain the morphology change of the Ge0.96Sn0.04 fin.

  18. Photoconductivity in Transition Metal Doped Bismuth Germanium Oxide

    Science.gov (United States)

    Newkirk, Nolan M.; McCullough, J. S.; Martin, J. J.

    1999-10-01

    Bismuth germanium oxide (BGO) is a photorefractive material that has potential for a number of applications. We are investigating the possibility of tailoring it for specific uses by doping with 3d-ions. . Anti-site bismuth is a native defect in melt-grown BGO. This amphoteric defect dominates the photo-response of undoped BGO and plays a role in transition metal doped samples. The majority of the 3d-ions go into the tetrahedrally bonded Ge-site; thus, Cr would be expected to be in a 4+ state. Instead, it gives up an electron to the anti-site Bi and is in a 5+ state. Strongly persistent photorefractive gratings are observed in BGO:Cr. Photoconductivity measurements were performed on undoped BGO, BGO:V, and BGO:Cr before and after the samples were exposed to 442 nm light. The photoconductivity response roughly matched the optical absorption spectra of the samples. The exposed samples showed additional photo-induced absorption bands and much stronger photocurrents in the same spectral regions. The exposure to blue light appears to convert Cr from the 5+ state to the 4+state.

  19. Germane facts about germanium sesquioxide: I. Chemistry and anticancer properties.

    Science.gov (United States)

    Kaplan, Bonnie J; Parish, W Wesley; Andrus, G Merrill; Simpson, J Steven A; Field, Catherine J

    2004-04-01

    This paper reviews the history, chemistry, safety, toxicity, and anticancer effects of the organogermanium compound bis (2-carboxyethylgermanium) sesquioxide (CEGS). A companion review follows, discussing the inaccuracies in the scientific record that have prematurely terminated research on clinical uses of CEGS. CEGS is a unique organogermanium compound first made by Mironov and coworkers in Russia and, shortly thereafter, popularized by Asai and his colleagues in Japan. Low concentrations of germanium occur in nearly all soils, plants and animal life; natural occurrence of the CEGS form is postulated but not yet demonstrated. The literature demonstrating its anticancer effect is particularly strong: CEGS induces interferon-gamma (IFN-gamma), enhances natural killer cell activity, and inhibits tumor and metastatic growth--effects often detectable after a single oral dose. In addition, oral consumption of CEGS is readily assimilated and rapidly cleared from the body without evidence of toxicity. Given these findings, the absence of human clinical trials of CEGS is unexpected. Possible explanations of why the convincing findings from animal research have not been used to support clinical trials are discussed. Clinical trials on CEGS are recommended.

  20. Thermal stability of simple tetragonal and hexagonal diamond germanium

    Science.gov (United States)

    Huston, L. Q.; Johnson, B. C.; Haberl, B.; Wong, S.; Williams, J. S.; Bradby, J. E.

    2017-11-01

    Exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursor materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.

  1. gamma-ray tracking in germanium the backtracking method

    CERN Document Server

    Marel, J V D

    2002-01-01

    In the framework of a European TMR network project the concept for a gamma-ray tracking array is being developed for nuclear physics spectroscopy in the energy range of approx 10 keV up to several MeV. The tracking array will consist of a large number of position-sensitive germanium detectors in a spherical geometry around a target. Due to the high segmentation, a Compton scattered gamma-ray will deposit energy in several different segments. A method has been developed to reconstruct the tracks of multiple coincident gamma-rays and to find their initial energies. By starting from the final point the track can be reconstructed backwards to the origin with the help of the photoelectric and Compton cross-sections and the Compton scatter formula. Every reconstructed track is given a figure of merit, thus allowing suppression of wrongly reconstructed tracks and gamma-rays that have scattered out of the detector system. This so-called backtracking method has been tested on simulated events in a shell-like geometry ...

  2. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  3. a Silicon Germanium Graded Junctionless Transistor with Low off Current

    Science.gov (United States)

    Surana, Neelam; Ghosh, Bahniman; Tripathy, Ball Mukund Mani; Salimath, Akshay Kumar

    2013-02-01

    We propose a Ge/Si graded junctionless transistor (JLT) which helps to reduce the band-to-band tunneling current in off-state for highly doped double gate junctionless transistor (DGJLT). In this paper, we show that there is large band-to-band tunneling (BTBT) current in off-state of silicon-channel and germanium-channel DGJLT, which causes increase in the off-state leakage current by several orders. With the help of band-gap engineering, we found that by using Ge/Si graded channel DGJLT off-state band-to-band tunneling current can be reduced. It is also observed that there is large deviation in the off-state leakage current with variation of drain voltage for Si and Ge body DGJLT, which reduces device stability. It is found that in Ge/Si graded DGJLT variation off-state leakage current with drain voltage is controlled. In Si and Ge, DGJLT electrons from the valence band of the channel tunnel to the conduction band of drain leaves holes which causes increased hole concentration in the channel creating parasitic 'BJT'.

  4. Comparison of CDMS [100] and [111] Oriented Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Leman, S.W.; Hertel, S.A.; /MIT, MKI; Kim, P.; /SLAC; Cabrera, B.; /Stanford U., Phys. Dept.; Do Couto E.Silva, E.; /SLAC; Figueroa-Feliciano, E.; McCarthy, K.A.; /MIT, MKI; Resch, R.; /SLAC; Sadoulet, B.; Sundqvist, K.M.; /UC, Berkeley

    2012-09-14

    The Cryogenic Dark Matter Search (CDMS) utilizes large mass, 3-inch diameter x 1-inch thick target masses as particle detectors. The target is instrumented with both phonon and ionization sensors and comparison of energy in each channel provides event-by-event classification of electron and nuclear recoils. Fiducial volume is determined by the ability to obtain good phonon and ionization signal at a particular location. Due to electronic band structure in germanium, electron mass is described by an anisotropic tensor with heavy mass aligned along the symmetry axis defined by the [111] Miller index (L valley), resulting in large lateral component to the transport. The spatial distribution of electrons varies significantly for detectors which have their longitudinal axis orientations described by either the [100] or [111] Miller indices. Electric fields with large fringing component at high detector radius also affect the spatial distribution of electrons and holes. Both effects are studied in a 3 dimensional Monte Carlo and the impact on fiducial volume is discussed.

  5. Point defect states in Sb-doped germanium

    International Nuclear Information System (INIS)

    Patel, Neil S.; Monmeyran, Corentin; Agarwal, Anuradha; Kimerling, Lionel C.

    2015-01-01

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E 37 , E 30 , E 22 , and E 21 ) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E 37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10 11  cm −3  Mrad −1 for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E 22 , E 21 , and E 30 indicate that E 22 likely contains two interstitials

  6. E-Government Dimension

    OpenAIRE

    Rosiyadi, Didi; Suryana, Nana; Cahyana, Ade; Nuryani, Nuryani

    2007-01-01

    Makalah ini mengemukakan E-Government Dimension yang merupakan salah satu hasil TahapanPengumpulan Data, dimana tahapan ini adalah bagian dari penelitian kompetitif di Lembaga Ilmu PengetahuanIndonesia 2007 yang sekarang sedang dilakukan. Data E-Government Dimension ini didapatkan dari berbagaisumber yang meliputi E-Government beberapa Negara di dunia, E-Government yang dibangun oleh beberapapenyedia aplikasi E-Government. E-Government Dimension terdiri dari tiga dimensi yaitu DemocraticDimen...

  7. Relaxing to Three Dimensions

    CERN Multimedia

    CERN. Geneva

    2006-01-01

    Extra dimensions of space might be present in our universe. If so, we want to know 'How do dimensions hide?' and 'Why are three dimensions special?' I'll give potential answers to both these questions in the context of localized gravity. Organiser(s): L. Alvarez-Gaume / PH-THNote: * Tea & coffee will be served at 16:00. Talk is broadcasted in Council Chamber

  8. Multiple dimensions of performance

    NARCIS (Netherlands)

    Torenvlied, René

    2013-01-01

    This presentation considers the multiple dimensions of performance in performance studies, and potentially contradicting effects of different management strategies on separate indicators of performance

  9. Gorenstein homological dimensions

    DEFF Research Database (Denmark)

    Holm, Henrik Granau

    2004-01-01

    In basic homological algebra, the projective, injective and 2at dimensions of modules play an important and fundamental role. In this paper, the closely related Gorenstein projective, Gorenstein injective and Gorenstein 2at dimensions are studied. There is a variety of nice results about Gorenstein...... dimensions over special commutative noetherian rings; very often local Cohen–Macaulay rings with a dualizing module. These results are done by Avramov, Christensen, Enochs, Foxby, Jenda, Martsinkovsky and Xu among others. The aim of this paper is to generalize these results, and to give homological...... descriptions of the Gorenstein dimensions over arbitrary associative rings....

  10. Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

    Energy Technology Data Exchange (ETDEWEB)

    Svarnas, P., E-mail: svarnas@ece.upatras.gr [High Voltage Laboratory, Department of Electrical and Computer Engineering, University of Patras, Rion 26 504, Patras (Greece); Botzakaki, M.A. [Department of Physics, University of Patras, Rion 26 504 (Greece); Skoulatakis, G.; Kennou, S.; Ladas, S. [Surface Science Laboratory, Department of Chemical Engineering, University of Patras, Rion 26 504 (Greece); Tsamis, C. [NCSR “Demokritos”, Institute of Advanced Materials, Physicochemical Processes, Nanotechnology & Microsystems, Aghia Paraskevi 15 310, Athens (Greece); Georga, S.N.; Krontiras, C.A. [Department of Physics, University of Patras, Rion 26 504 (Greece)

    2016-01-29

    It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400 °C. Different techniques, implementing quite complicated plasma setups, gas mixtures and substrate heating, have been used in order to grow a stable germanium oxide. In the present work a traditional “RF diode” is used for germanium oxidation by cold plasma. Following growth, X-ray photoelectron spectroscopy demonstrates that traditional capacitively driven radio frequency discharges, using molecular oxygen as sole feedstock gas, provide the possibility of germanium dioxide layer growth in a fully reproducible and controllable manner. Post treatment ex-situ analyses on day-scale periods disclose the stability of germanium oxide at room ambient conditions, offering thus the ability to grow (ex-situ) ultra-thin high-k dielectrics on top of germanium oxide layers. Atomic force microscopy excludes any morphological modification in respect to the bare germanium surface. These results suggest a simple method for a controllable and stable germanium oxide growth, and contribute to the challenge to switch to high-k dielectrics as gate insulators for high-performance metal-oxide-semiconductor field-effect transistors and to exploit in large scale the superior properties of germanium as an alternative channel material in future technology nodes. - Highlights: • Simple one-frequency reactive ion etcher develops GeO{sub 2} thin layers controllably. • The layers remain chemically stable at ambient conditions over day-scale periods. • The layers are unaffected by the ex-situ deposition of high-k dielectrics onto them. • GeO{sub 2} oxidation and high-k deposition don't affect the Ge morphology significantly. • These conditions contribute to improved Ge-based MOS structure fabrication.

  11. Techniques to distinguish between electron and photon induced events using segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kroeninger, K.

    2007-06-05

    Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

  12. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

    Directory of Open Access Journals (Sweden)

    Partha Talukdar

    Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  13. Navigating between the Dimensions

    Science.gov (United States)

    Fleron, Julian F.; Ecke, Volker

    2011-01-01

    Generations have been inspired by Edwin A. Abbott's profound tour of the dimensions in his novella "Flatland: A Romance of Many Dimensions" (1884). This well-known satire is the story of a flat land inhabited by geometric shapes trying to navigate the subtleties of their geometric, social, and political positions. In this article, the authors…

  14. Dimensions of Occupational Prestige

    Science.gov (United States)

    Haug, Marie R.; Widdison, Harold A.

    1975-01-01

    Eight dimensions of occupational prestige are examined for their effect on the general prestige ratings accorded various occupations within the medical profession. Stepwise multiple regression analyzes the relative weight of these dimension among 410 persons. The findings suggested that public stereotypes exert a normative pressure on individual…

  15. Geometric Dimensioning Sentence Structure.

    Science.gov (United States)

    McCuistion, Patrick J.

    1991-01-01

    Explanations of geometric dimensioning symbols are provided to assist in the comprehension of the implied basic sentence structure of modern geometric dimensioning and tolerance. The proper identification and interpretation of the substantive language within several exemplary engineering drawings, otherwise called feature control frames, is…

  16. Dimensions of Adolescent Employment.

    Science.gov (United States)

    Mael, Fred A.; Morath, Ray A.; McLellan, Jeffrey A.

    1997-01-01

    Examines positive and negative correlates of adolescent work as a function of work dimensions. Results indicate that concurrent costs and benefits of adolescent employment may depend on dimensions of work as well as adolescent characteristics. Adolescent employment was generally related to subsequent work motivation and nonacademic performance.…

  17. Dimension of linear models

    DEFF Research Database (Denmark)

    Høskuldsson, Agnar

    1996-01-01

    Determination of the proper dimension of a given linear model is one of the most important tasks in the applied modeling work. We consider here eight criteria that can be used to determine the dimension of the model, or equivalently, the number of components to use in the model. Four of these cri......Determination of the proper dimension of a given linear model is one of the most important tasks in the applied modeling work. We consider here eight criteria that can be used to determine the dimension of the model, or equivalently, the number of components to use in the model. Four...... the basic problems in determining the dimension of linear models. Then each of the eight measures are treated. The results are illustrated by examples....

  18. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  19. Use of Germanium as comparator and integral monitor of neutron flux in activation analysis

    International Nuclear Information System (INIS)

    Furnari, Juan C.; Cohen, Isaac M.; Arribere, Maria A.; Kestelman, Abraham J.

    1997-01-01

    The possibility of using germanium as monitor of the thermal and epithermal components of the neutron flux, and comparator in parametric activation analysis, is discussed. The advantages and drawbacks associated to the use of this element are commented on, and the comparison with zirconium, in terms of the determination relative error, is performed. The utilisation of germanium as integral flux monitor, including the fast component of the neutron spectrum, is also discussed. Data corresponding to measurements of k 0 factor for the most relevant gamma transitions from Ge-75 and Be-77 are presented, as well as the results of the reference material analysis, employing germanium as flux monitor and comparator in a simultaneous way. (author). 8 refs., 3 figs., 2 tabs

  20. [Subacute and subchronic oral toxicity of beta-bis carboxyethyl sesquioxide of germanium in the rat].

    Science.gov (United States)

    Anger, F; Anger, J P; Guillou, L; Sado, P A; Papillon, A

    1991-12-01

    After a brief recall of toxicological data about germanium compounds, the authors relate subacute and subchronic oral toxicities of beta bis carboxyethyl-germanium sesquioxide in rats. During 28 days and six months, male and female animals have received 1 mg/kg/day. No particular toxic symptoms, no behaviour trouble except a small decrease of body weight, in male rats, at the end of the 6-month experimentation, were observed. A light decrease of erythropoiesis and a general stimulation of cellular metabolism has been noticed after 28 days. The only marked effect was a moderate renal deficiency characterized by a tubular disease with presence of cylinders, swelling of tubulus cells and floculus amounts after 6 months. Germanium urinary excretion was constant and linked to the received dose. Six months later, no preferential accumulation in organs was observed.

  1. Germanium field-effect transistor made from a high-purity substrate

    International Nuclear Information System (INIS)

    Hansen, W.L.; Goulding, F.S.; Haller, E.E.

    1978-11-01

    Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

  2. Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Martineau, F; Namur, K; Mallet, J; Delavoie, F; Troyon, M; Molinari, M [Laboratoire de Microscopies et d' Etude de Nanostructures (LMEN EA3799), Universite de Reims Champagne Ardennes (URCA), Reims Cedex 2 (France); Endres, F, E-mail: michael.molinari@univ-reims.fr [Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, D-36678 Clausthal-Zellerfeld (Germany)

    2009-11-15

    The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P{sub 1,4}) containing SiCl{sub 4} as Si source or GeCl{sub 4} as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

  3. Classification of 3-3 transitions in neonlike germanium in laser-produced plasma

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, G. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan)); Kato, Y. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan)); Daido, H. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan)); Kodama, R. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan)); Murai, K. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan)); Nakai, S. (Inst. of Laser Engineering, Osaka Univ., Osaka (Japan))

    1994-11-01

    Classification of 3-3 transitions in neonlike germanium in laser-produced plasma has been made. The spectra have been observed in the range of 185-290 A using a high resolving power ([lambda]/[Delta][lambda][proportional to]13000) grazing-incidence spectrometer in XUV laser experiment. A total of 21 lines (including five lasing lines) have been classified as transitions between the 2s[sup 2] 2p[sup 5] 3s, 3p, 3d or 2s 2p[sup 6] 3p, 3d and sodiumlike germanium configurations. The identified transitions have been used to derive energy levels of 2s[sup 2] 2p[sup 5] 3l in neonlike germanium. The experimental results have been compared with theoretical predictions from Dirac-Fock (MCDF) calculations. (orig.)

  4. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Improved proton CT imaging using a bismuth germanium oxide scintillator

    Science.gov (United States)

    Tanaka, Sodai; Nishio, Teiji; Tsuneda, Masato; Matsushita, Keiichiro; Kabuki, Shigeto; Uesaka, Mitsuru

    2018-02-01

    Range uncertainty is among the most formidable challenges associated with the treatment planning of proton therapy. Proton imaging, which includes proton radiography and proton computed tomography (pCT), is a useful verification tool. We have developed a pCT detection system that uses a thick bismuth germanium oxide (BGO) scintillator and a CCD camera. The current method is based on a previous detection system that used a plastic scintillator, and implements improved image processing techniques. In the new system, the scintillation light intensity is integrated along the proton beam path by the BGO scintillator, and acquired as a two-dimensional distribution with the CCD camera. The range of a penetrating proton is derived from the integrated light intensity using a light-to-range conversion table, and a pCT image can be reconstructed. The proton range in the BGO scintillator is shorter than in the plastic scintillator, so errors due to extended proton ranges can be reduced. To demonstrate the feasibility of the pCT system, an experiment was performed using a 70 MeV proton beam created by the AVF930 cyclotron at the National Institute of Radiological Sciences. The accuracy of the light-to-range conversion table, which is susceptible to errors due to its spatial dependence, was investigated, and the errors in the acquired pixel values were less than 0.5 mm. Images of various materials were acquired, and the pixel-value errors were within 3.1%, which represents an improvement over previous results. We also obtained a pCT image of an edible chicken piece, the first of its kind for a biological material, and internal structures approximately one millimeter in size were clearly observed. This pCT imaging system is fast and simple, and based on these findings, we anticipate that we can acquire 200 MeV pCT images using the BGO scintillator system.

  6. Electronic and magnetic properties of perfect and defected germanium nanoribbons

    International Nuclear Information System (INIS)

    Pang Qing; Zhang Yan; Zhang Jianmin; Ji, Vincent; Xu Kewei

    2011-01-01

    Highlights: · Perfect AGeNRs are NM semiconductor with three-branch band gaps and decaying profiles. · Perfect ZGeNRs are AFM semiconductor with a decreasing band gap as width increases. · The band gap of AGeNRs can be tuned by mono- or di-vacancy at different positions. · Metallization can be realized in ZGeNRs by mono- or di-vacancy at different positions. · Magnetic properties of ZGeNRs depend closely upon the vacancy positions. - Abstract: The electronic and magnetic properties of both perfect and defected germanium nanoribbons (GeNRs) are investigated by using projector-augmented wave method based on density-functional theory. All the GeNRs with different edge shapes (armchair or zigzag) and widths are cut from the buckled Ge hexagonal sheet which is found to be semi-metallic as the planar graphene sheet. The results show that the perfect armchair GeNRs are nonmagnetic semiconductors and their band gaps exhibit three branches with decaying profiles, while the perfect zigzag GeNRs show the stable antiferromagnetic semiconducting ground state and their band gaps monotonously decrease with increasing ribbon width. These properties of the GeNRs are similar to graphene nanoribbons and should be important for designing new functional Ge-based nanodevices. The effects of the monovacancy or divacancy on the electronic and magnetic properties of the GeNRs are also considered. We found that the band gap of armchair GeNRs can be easily tuned by a monovancancy or divacancy at different positions, which provides a way of band gap engineering of armchair GeNRs for actual applications. Different from the defected armchair GeNRs, the metallization can be realized in zigzag GeNRs by a monovacancy or a divacancy, however, their magnetic properties depend closely upon the vacancy positions.

  7. Timing of gamma rays in coaxial germanium detector systems

    International Nuclear Information System (INIS)

    El-Ibiary, M.Y.

    1979-01-01

    A study is reported on the timing uncertainty in gamma ray coaxial germanium detector systems. The work deals with the zero cross over method which is widely used to reduce the dependence of the instant of timing on the radiation energy absorbed and on the position within the detector at which absorption takes place. It is found that the amplitude risetime compensated (ARC) method gives, under normal conditions, the best resolution at a specific energy. For higher energies, the resolution improves and there is no shift of the mean instant of timing. The method is therefore well suited for wide energy coverage. The parameters involved in implementing an ARC system for optimum performance at a specific energy are identified in terms of the preamplifier noise level and risetime. A trade off can be made between the resolutions at high and at low energies. The time resolution attained is given by means of a series of charts which use normalized dimensionless variables for ready application to any given case. Lithium compensated Ge detectors which normally operate under conditions of velocity saturation of the charge carriers by applying sufficient bias voltage create an electric field in excess of 1 kV/cm throughout the depleted region. High purity Ge detectors where velocity saturation may not be reached within certain parts of the depleted region are studied. Special attention is given to the probability of pulses being incorrectly timed because of their slow rise or small magnitude. Such incorrect timing is energy-dependent and results in a noticeable distortion of the timing spectrum that relates to a wide energy range. Limitations on system parameters to keep the probability of incorrect timing below a specified fraction are given

  8. Systematic Uncertainties in High-Rate Germanium Data

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, Andrew J.; Fast, James E.; Fulsom, Bryan G.; Pitts, William K.; VanDevender, Brent A.; Wood, Lynn S.

    2016-10-06

    For many nuclear material safeguards inspections, spectroscopic gamma detectors are required which can achieve high event rates (in excess of 10^6 s^-1) while maintaining very good energy resolution for discrimination of neighboring gamma signatures in complex backgrounds. Such spectra can be useful for non-destructive assay (NDA) of spent nuclear fuel with long cooling times, which contains many potentially useful low-rate gamma lines, e.g., Cs-134, in the presence of a few dominating gamma lines, such as Cs-137. Detectors in use typically sacrifice energy resolution for count rate, e.g., LaBr3, or visa versa, e.g., CdZnTe. In contrast, we anticipate that beginning with a detector with high energy resolution, e.g., high-purity germanium (HPGe), and adapting the data acquisition for high throughput will be able to achieve the goals of the ideal detector. In this work, we present quantification of Cs-134 and Cs-137 activities, useful for fuel burn-up quantification, in fuel that has been cooling for 22.3 years. A segmented, planar HPGe detector is used for this inspection, which has been adapted for a high-rate throughput in excess of 500k counts/s. Using a very-high-statistic spectrum of 2.4*10^11 counts, isotope activities can be determined with very low statistical uncertainty. However, it is determined that systematic uncertainties dominate in such a data set, e.g., the uncertainty in the pulse line shape. This spectrum offers a unique opportunity to quantify this uncertainty and subsequently determine required counting times for given precision on values of interest.

  9. Limits on light weakly interacting massive particles from the CDEX-1 experiment with a p -type point-contact germanium detector at the China Jinping Underground Laboratory

    Science.gov (United States)

    Yue, Q.; Zhao, W.; Kang, K. J.; Cheng, J. P.; Li, Y. J.; Lin, S. T.; Chang, J. P.; Chen, N.; Chen, Q. H.; Chen, Y. H.; Chuang, Y. C.; Deng, Z.; Du, Q.; Gong, H.; Hao, X. Q.; He, H. J.; He, Q. J.; Huang, H. X.; Huang, T. R.; Jiang, H.; Li, H. B.; Li, J. M.; Li, J.; Li, J.; Li, X.; Li, X. Y.; Li, Y. L.; Liao, H. Y.; Lin, F. K.; Liu, S. K.; Lü, L. C.; Ma, H.; Mao, S. J.; Qin, J. Q.; Ren, J.; Ren, J.; Ruan, X. C.; Shen, M. B.; Singh, L.; Singh, M. K.; Soma, A. K.; Su, J.; Tang, C. J.; Tseng, C. H.; Wang, J. M.; Wang, L.; Wang, Q.; Wong, H. T.; Wu, S. Y.; Wu, Y. C.; Wu, Y. C.; Xianyu, Z. Z.; Xiao, R. Q.; Xing, H. Y.; Xu, F. Z.; Xu, Y.; Xu, X. J.; Xue, T.; Yang, L. T.; Yang, S. W.; Yi, N.; Yu, C. X.; Yu, H.; Yu, X. Z.; Zeng, X. H.; Zeng, Z.; Zhang, L.; Zhang, Y. H.; Zhao, M. G.; Zhou, Z. Y.; Zhu, J. J.; Zhu, W. B.; Zhu, X. Z.; Zhu, Z. H.; CDEX Collaboration

    2014-11-01

    We report results of a search for light dark matter weakly interacting massive particles (WIMPs) with CDEX-1 experiment at the China Jinping Underground Laboratory, based on 53.9 kg-days of data from a p -type point-contact germanium detector enclosed by a NaI(Tl) crystal scintillator as anti-Compton detector. The event rate and spectrum above the analysis threshold of 475 eVee are consistent with the understood background model. Part of the allowed regions for WIMP-nucleus coherent elastic scattering at WIMP mass of 6-20 GeV are probed and excluded. Independent of interaction channels, this result contradicts the interpretation that the anomalous excesses of the CoGeNT experiment are induced by dark matter, since identical detector techniques are used in both experiments.

  10. Coexistence in even-even nuclei with emphasis on the germanium isotopes

    International Nuclear Information System (INIS)

    Carchidi, M.A.V.

    1985-01-01

    No simple model to date can explain in a self-consistent way the results of direct transfer data and BE2 electromagnetic rates in the germanium isotopes. The simplest models use a two-state interaction for describing the ground state and first excited O + state. In all cases, these models can account for some of the data, but they are in drastic conflict with other experimental measurements. In this thesis, it is shown that a two-state model can consistently account for two-neutron and alpha transfer O + 2 /g.s. cross-section ratio data in the germanium region (ie. zinc, germanium, and selenium), proton occupation number data in the ground states of the even stable zinc, germanium, and selenium isotopes, and BE2 transition rates in isotopes of germanium and zinc. In addition the author can account for most of the one-neutron and two-neutron transfer O + 2 /g.s. and (9/2 + 2 )/(9/2 + 1 ) cross-section ratio data in the odd-mass germanium isotopes. In this generalized two-state model (called Rerg1), the author makes as few assumptions as possible about the nature of the basis states; rather the author allows the experimental data to dictate the properties of the basis-state overlaps. In this sense, the author has learned much about the basis states and has a useful tool for constructing them. The author also shows that the Rerg1 model can quantitatively account for all two-neutron O + 2 /g.s. cross-section ratio data in all even-even nuclei from calcium to uranium

  11. A study on the forms of existence of germanium in uranium-bearing coals of Bangmai basin of Yunnan

    International Nuclear Information System (INIS)

    Zhang Shuling; Wang Shuying; Yin Jinshuang

    1988-07-01

    The Bangmai basin is an asymmetrical intermontane synclinal basin with a Hercynian-Yenshan granitic body (γ 3 3 -γ 5 2 ) as its basement. Its overlying strata are made up of the N 1 of coal-bearing clastic rocks of Neogene period. Germanium ore mostly occur within the N 1 2 coal-seam. Uranium, germanium-bearing coals are mainly lignites of low grade in coalation and belong to semidurain, semiclarain, duroclarain and clarodurain. In order to probe into the forms of existence of germanium in coal, six kinds of analytical methods (electronic probe analysis, separation of heavy liquid, grain-size analysis, electric osmosis, chemical extraction and grade-extraction) have been adopted. A simulated test of humic complex germanium in the laboratory was carried out. According to infrared spectral analysis, it is found that 1700 cm -1 wavecrest almost disappears, 1250 cm -1 peak weakens and 1600 cm -1 peak strengthens, 1400 cm -1 peak slightly strengthens. No doubt, these illustrate the formatiion of humic germanium complex. Afterward, through differential thermal analysis and measurement of pH variation of media, it futher proves the presence of humic germanium complex. It is considered that the forms of existence of germanium in uranium-bearing coals mainly are: (1) In close chemical combination with organic matter, usually in the form of humic germanium complex and germanium organic compound; (2) In the state of adsorption, germanium is adsorbed by some organic matter, clay minerals and limonite etc.; (3) A very rare part occurring as isomorphous form

  12. Point contact germanium detectors at 500 eVee threshold for light dark matter searches

    Science.gov (United States)

    Soma, Arun Kumar; Li, Hau-Bin; Lin, Shin-Ted; Wong, Henry Tsz-King; TEXONO Collaboration

    2016-04-01

    Germanium detectors with sub-keV sensitivities can probe low-mass WIMP Dark Matter. This experimental approach is pursued at Kuo-Sheng Neutrino Laboratory (KSNL) in Taiwan and at China Jinping Underground Laboratory (CJPL) in China via TEXONO and CDEX programs, respectively. The highlights of R&D efforts on point contact germanium detectors and in particular the differentiation of surface and bulk events by pulse shape analysis are described. The latest results on WIMP-nucleon scattering cross-sections are also presented. Some of the allowed parameter space implied by other experiments are probed and excluded.

  13. A complete physical germanium-on-silicon quantum dot self-assembly process.

    Science.gov (United States)

    Alkhatib, Amro; Nayfeh, Ammar

    2013-01-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

  14. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    Science.gov (United States)

    Alkhatib, Amro; Nayfeh, Ammar

    2013-06-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

  15. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  16. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  17. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    International Nuclear Information System (INIS)

    Heusser, G.; Weber, M.; Hakenmüller, J.; Laubenstein, M.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H.

    2015-01-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg -1 for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites

  18. Gold-mask technique for fabricating segmented-electrode germanium detectors

    International Nuclear Information System (INIS)

    Luke, P.N.

    1984-01-01

    A simple gold-mask technique has been developed for use in the fabrication of germanium nuclear radiation detectors. A layer of gold deposited over the contacts of the detectors acts as masks for chemical etching and surface treatments. It also serves as a reliable, low resistance electrical connection to the underlying germanium contact. This technique greatly facilitates the fabrication of a wide variety of segmented-electrode planar and coaxial detectors. Examples of these detectors with applications in medical imaging, gamma-ray astronomy and high-energy physics are presented

  19. The fourth dimension

    CERN Document Server

    Rucker, Rudy

    2014-01-01

    ""This is an invigorating book, a short but spirited slalom for the mind."" - Timothy Ferris, The New York Times Book Review ""Highly readable. One is reminded of the breadth and depth of Hofstadter's Gödel, Escher, Bach."" - Science""Anyone with even a minimal interest in mathematics and fantasy will find The Fourth Dimension informative and mind-dazzling... [Rucker] plunges into spaces above three with a zest and energy that is breathtaking."" - Martin Gardner ""Those who think the fourth dimension is nothing but time should be encouraged to read The Fourth Dimension, along with anyone else

  20. Study of new germanium bolometers with interleaved concentric electrodes for non-baryonic cold dark matter direct detection in the Edelweiss-II experiment

    International Nuclear Information System (INIS)

    Domange, J.

    2011-09-01

    EDELWEISS is a direct non-baryonic cold dark matter detection experiment in the form of weakly interacting massive particles (also known as WIMPs), which currently constitute the most popular candidates to account for the missing mass in the Universe. To this purpose, EDELWEISS uses germanium bolometers at cryogenic temperature (20 mK approximately) in the Underground Laboratory of Modane (LSM) at the French-Italian border. Since 2008, a new type of detector is operated, equipped with concentric electrodes to optimize the rejection of surface events (coplanar-grid detectors). This thesis work is divided into several research orientations. First, we carried out measurements concerning charge collection in the crystals. The velocity laws of the carriers (electrons and holes) have been determined in germanium at 20 mK in the orientation, and a complete study of charge sharing has been done, including an evaluation of the transport anisotropy and of the straggling of the carriers. These results lead to a better understanding of the inner properties of the EDELWEISS detectors. Then, studies relating to the improvement of the performances were carried out. In particular, we have optimized the space-charge cancellation procedure in the crystals and improved the passive rejection of surface events (β). The fiducial volume of the detectors has been evaluated using two X-ray lines from cosmically activated radionuclides: 68 Ge and 65 Zn. Finally, an exhaustive study of the low energy spectra has been carried out, which makes it possible to develop a systematic analysis method for the search of low-mass WIMPs in EDELWEISS. (author)

  1. Steering of sub-GeV electrons by ultrashort Si and Ge bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sytov, A.I. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; INFN Sezione di Ferrara (Italy); Bandiera, L.; Mazzolari, A.; Bagli, E.; Germogli, G.; Guidi, V.; Romagnoni, M. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN Sezione di Ferrara (Italy); De Salvador, D.; Carturan, S.; Maggioni, G. [INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; Berra, A.; Prest, M. [Univ. dell' Insubria, Como (Italy); INFN, Sezione di Milano Bicocca, Milan (Italy); Durighello, C. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; INFN Sezione di Ferrara (Italy); Klag, P.; Lauth, W. [Mainz Univ. (Germany). Inst. fuer Kernphysik; Tikhomirov, V.V. [Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; Vallazza, E. [INFN, Sezione di Trieste (Italy)

    2017-12-15

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μm of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals. (orig.)

  2. Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

    Science.gov (United States)

    Sytov, A. I.; Bandiera, L.; De Salvador, D.; Mazzolari, A.; Bagli, E.; Berra, A.; Carturan, S.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Prest, M.; Romagnoni, M.; Tikhomirov, V. V.; Vallazza, E.

    2017-12-01

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μ m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.

  3. Equilibrium Crystal Shapes by Virtual Work

    Science.gov (United States)

    Reivinen, M.; Salonen, E.-M.; Todoshchenko, I.; Vaskelainen, V. P.

    2013-01-01

    A formulation on equilibrium crystal shape determination based on the principle of virtual work is presented. The treatment is restricted to two dimensions. A corresponding discrete solution method is given. Some example cases are presented.

  4. Experimental study of thermocapillary convection in a germanium melt

    Science.gov (United States)

    Gorbunov, Leonid A.

    1996-08-01

    The present paper is dedicated to the experimental investigation of thermocapillary convection (TCC) in semiconductor melts. The investigation showed that in the process of single crystal growth under terrestrial conditions TCC could be compared to thermogravity convection (TGC) for a number of semiconductor melts such as Ge, Si, GaAs. But in comparatively thin layers with H container radius) it can dominate over TGC. The experiments were conducted with a Ge melt. Oxide particle tracers were used to measure the melt motion rate. The results obtained emphasize the significance of TCC in the process of single crystal growth under terrestrial conditions.

  5. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    International Nuclear Information System (INIS)

    Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

    2004-01-01

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

  6. Escaping in extra dimensions

    CERN Multimedia

    CERN. Geneva. Audiovisual Unit

    2002-01-01

    Recent progress in the formulation of fundamental theories for a Universe with more than 4 dimensions will be reviewed. Particular emphasis will be given to theories predicting the existence of extra dimensions at distance scales within the reach of current or forthcoming experiments. The phenomenological implications of these theories, ranging from detectable deviations from Newton's law at sub-millimeter scales, to phenomena of cosmological and astrophysical interest, as well as to high-energy laboratory experiments, will be discussed.

  7. Alternating dimension plasma transport in three dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Grad, H.

    1979-12-01

    The alternating dimension (1 1/2 D) method of solving macroscopic adiabatic and transport problems is here generalized to arbitrary 3-D toroidal plasma confinement systems. The principal new result is the derivation of an evolution equation for the poloidal and toroidal fluxes in which second derivatives can be explicitly exhibited to show that the system is diffusive. This extends previous results in 2-D, axial symmetry and helical symmetry, where the flux functions for the magnetic field are explicit consequences of an ignorable coordinate, and the EBT closed magnetic line configuration. The eigenvalues (diffusion coefficients) are evaluated and are shown to represent one-dimensional relative diffusion among the adiabatic variables, independent of the representation (e.g. whether diffusion is measured relative to mass, or toroidal flux, or poloidal flux). The skin effect diffusion coefficient decouples from the other coefficients and represents diffusion of one magnetic field component relative to the other. Other transport coefficients such as those for mass and energy flow are intrinsically coupled. As in previously implemented alternating dimension codes, a 3-D code built to these specifications should be expected to be extremely accurate and efficient.

  8. Spin coherence in silicon/silicon-germanium nanostructures

    Science.gov (United States)

    Truitt, James L.

    This thesis investigates the spin coherence of electrons in silicon/silicon-germanium (Si/SiGe) quantum wells. With a long spin coherence time, an electron trapped in a quantum dot in Si/SiGe is a prime candidate for a quantum bit (qubit) in a solid state implementation of a quantum computer. In particular, the mechanisms responsible for decoherence are examined in a variety of Si/SiGe quantum wells, and it is seen that their behavior does not correspond to published theories of decoherence in these structures. Transport data are analyzed for all samples to determine the electrical properties of each, taking into account a parallel conduction path seen in all samples. Furthermore, the effect of confining the electrons into nanostructures of varying size in one of the samples is studied. All but one of the samples examined are grown by ultrahigh vacuum chemical vapor deposition at the University of Wisconsin - Madison. The nanostructures are patterned on a sample provided by IBM using the Nabity Pattern Generation Software (NPGS) on a LEO1530 Scanning Electron Microscope, and etched using SF6 in an STS reactive ion etcher. Continuous-wave electron spin resonance studies are done using a Bruker ESP300E spectrometer, with a 4.2K continuous flow cryostat and X-band cavity. In order to fully characterize the sample, electrical measurements were done. Hall bars are etched into the 2DEGs, and Ohmic contacts are annealed in to provide a current path through the 2DEG. Measurements are made both from room temperature down to 2K in a Physical Property Measurement System (PPMS), and at 300mK using a custom built probe in a one shot 3He cryostat made by Oxford Instruments. The custom built probe also allows high frequency excitations, facilitating electrically detected magnetic resonance (EDMR) experiments. In many of the samples, an orientationally dependent electron spin resonance linewidth is seen whose anisotropy is much larger at small angles than that predicted by

  9. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    Science.gov (United States)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  10. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at .... orientation along c-axis. The intensities of all .... mobility (µ) at room temperature for GeS (I2) single crystals at different values of the magnetic field (H). Magnetic. Hall coefficient. Resistivity. Carrier. Mobility field (H). (RH).

  11. A variational principle for the Hausdorff dimension of fractal sets

    DEFF Research Database (Denmark)

    Olsen, Lars; Cutler, Colleen D.

    1994-01-01

    Matematik, fraktal (fractal), Hausdorff dimension, Renyi dimension, pakke dimension (packing dimension)......Matematik, fraktal (fractal), Hausdorff dimension, Renyi dimension, pakke dimension (packing dimension)...

  12. Dark Matter Search with Sub-Kev Germanium Detectors at the China Jinping Underground Laboratory

    Science.gov (United States)

    Yue, Qian; Wong, Henry T.

    2013-12-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  13. Reaction studies of hot silicon and germanium radicals. Progress report, September 1, 1979-August 31, 1980

    International Nuclear Information System (INIS)

    Gaspar, P.P.

    1980-01-01

    The experimental approach to attaining the goals of this research program is briefly outlined and the progress made in the last year is reviewed in sections entitled: (a) primary steps in the reaction of recoiling silicon and germanium atoms and the identification of reactive intermediates in the recoil reactions; (b) thermally induced silylene and germylene reactions; (c) ion-molecule reaction studies

  14. Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

    International Nuclear Information System (INIS)

    Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

    1996-01-01

    The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

  15. Overview of multi-element monolithic germanium detectors for XAFS experiments at diamond light source

    Energy Technology Data Exchange (ETDEWEB)

    Chatterji, S.; Dennis, G. J.; Dent, A.; Diaz-Moreno, S.; Cibin, G.; Tartoni, N. [Diamond Light Source Ltd, Oxfordshire (United Kingdom); Helsby, W. I. [STFC Daresbury Laboratory, Warrington (United Kingdom)

    2016-07-27

    An overview of multi-element monolithic germanium detectors being used at the X-ray absorption spectroscopy (XAS) beam lines at Diamond Light Source (DLS) is being reported. The hardware details and a summary of the performance of these detectors have also been provided. Recent updates about various ongoing projects being worked on to improve the performance of these detectors are summarized.

  16. Overview of multi-element monolithic germanium detectors for XAFS experiments at diamond light source

    International Nuclear Information System (INIS)

    Chatterji, S.; Dennis, G. J.; Dent, A.; Diaz-Moreno, S.; Cibin, G.; Tartoni, N.; Helsby, W. I.

    2016-01-01

    An overview of multi-element monolithic germanium detectors being used at the X-ray absorption spectroscopy (XAS) beam lines at Diamond Light Source (DLS) is being reported. The hardware details and a summary of the performance of these detectors have also been provided. Recent updates about various ongoing projects being worked on to improve the performance of these detectors are summarized.

  17. Strong quantum-confined stark effect in germanium quantum-well structures on silicon

    International Nuclear Information System (INIS)

    Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

    2006-01-01

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

  18. Neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    2014-11-04

    Nov 4, 2014 ... Abstract. Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng ...

  19. Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

    Science.gov (United States)

    Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

    2017-12-01

    Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

  20. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    Science.gov (United States)

    Lin, Li-Xia; Chen, Jia-He; Wu, Peng; Zeng, Yu-Heng; Ma, Xiang-Yang; Yang, De-Ren

    2011-03-01

    The formation of a denuded zone (DZ) by conventional furnace annealing (CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper (Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski (GHPCZ) silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect (BMD) region could be formed in heavily phosphorus-doped Czochralski (HPCZ) silicon and GHPCZ silicon wafers. This is ascribed to the formation of phosphorus-vacancy (P-V) related complexes and germanium-vacancy (GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  1. Neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    2014-11-04

    Nov 4, 2014 ... Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor ...

  2. Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Liu, Chuan

    2011-01-01

    Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...

  3. Dark Matter Search with sub-keV Germanium Detectors at the China Jinping Underground Laboratory

    International Nuclear Information System (INIS)

    Yue Qian; Wong, Henry T

    2012-01-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  4. Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

    Energy Technology Data Exchange (ETDEWEB)

    Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.; Gelain, M. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Department of Physics and Astronomy “G. Galilei”, University of Padova, Via Marzolo 8, 35121 Padova (Italy); Eberth, J. [Institut für Kernphysik, Universität zu Köln, Zülpicher Straße 77, D-50937 Köln (Germany); Grimaldi, M. G.; Tatí, S. [Department of Physics and Astronomy, University of Catania (Italy); Riccetto, S. [University of Camerino and INFN of Perugia (Italy); Mea, G. Della [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); University of Trento (Italy)

    2016-07-07

    High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

  5. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    DEFF Research Database (Denmark)

    Hellings, G.; Rosseel, E.; Simoen, E.

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3...

  6. Fabrication and research of high purity germanium detectors with abrupt and thin diffusion layer

    International Nuclear Information System (INIS)

    Rodriguez Cabal, A. E.; Diaz Garcia, A.

    1997-01-01

    A different high purity germanium detector's fabrication method is described. A very thin diffusion film with an abrupt change of the type of conductivity is obtained. The fine diffusion layer thickness makes possibly their utilization in experimental systems in which all the data are elaborated directly on the computer. (author) [es

  7. Fabrication of diamond-coated germanium ATR prisms for IR-spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Babchenko, Oleg; Kozak, Halyna; Ižák, Tibor; Stuchlík, Jiří; Remeš, Zdeněk; Rezek, Bohuslav; Kromka, Alexander

    2016-01-01

    Roč. 87, May (2016), 67-73 ISSN 0924-2031 R&D Projects: GA ČR GA15-01687S Institutional support: RVO:68378271 Keywords : diamond * low temperature growth * linear antenna microwave plasma * germanium * SEM * FTIR Subject RIV: JI - Composite Materials Impact factor: 1.740, year: 2016

  8. Reaction studies of hot silicon and germanium radicals. Progress report, February 1, 1982-July 31, 1984

    International Nuclear Information System (INIS)

    Gaspar, P.P.

    1984-01-01

    The experimental approach toward attaining the goals of this research program is briefly outlined, and the progress made in the 1982 to 1984 period is reviewed in sections entitled: (1) Recoil atom experiments, (2) Studies of thermally and photochemically generated silicon and germanium radicals, and (3) Ion-molecule reaction studies

  9. Characterization of segmented large volume, high purity germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bruyneel, B. [Koeln Univ. (Germany). Inst. fuer Kernphysik

    2006-07-01

    {gamma}-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple {gamma}-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by {gamma}-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics

  10. Dimensions of Openness

    DEFF Research Database (Denmark)

    Dalsgaard, Christian; Thestrup, Klaus

    2015-01-01

    The objective of the paper is to present a pedagogical approach to openness. The paper develops a framework for understanding the pedagogical opportunities of openness in education. Based on the pragmatism of John Dewey and sociocultural learning theory, the paper defines openness in education as...... for openness. With examples from a university case, the paper discusses how alternative pedagogical formats and educational technologies can support the three dimensions of openness....... as a matter of engaging educational activities in sociocultural practices of a surrounding society. Openness is not only a matter of opening up the existing, but of developing new educational practices that interact with society. The paper outlines three pedagogical dimensions of openness: transparency...... practices. Openness as joint engagement in the world aims at establishing interdependent collaborative relationships between educational institutions and external practices. To achieve these dimensions of openness, educational activities need to change and move beyond the course as the main format...

  11. On universal quantum dimensions

    Directory of Open Access Journals (Sweden)

    R.L. Mkrtchyan

    2017-08-01

    Full Text Available We represent in the universal form restricted one-instanton partition function of supersymmetric Yang–Mills theory. It is based on the derivation of universal expressions for quantum dimensions (universal characters of Cartan powers of adjoint and some other series of irreps of simple Lie algebras. These formulae also provide a proof of formulae for universal quantum dimensions for low-dimensional representations, needed in derivation of universal knot polynomials (i.e. colored Wilson averages of Chern–Simons theory on 3d sphere. As a check of the (complicated formulae for universal quantum dimensions we prove numerically Deligne's hypothesis on universal characters for symmetric cube of adjoint representation.

  12. The crystallization of a solid solution in a solvent and the stability of a growth interface

    International Nuclear Information System (INIS)

    Malmejac, Yves

    1971-03-01

    The potential uses of germanium-silicon alloys as thermoelectric generators in hitherto unexploited temperature ranges initiated the present study. Many delicate problems are encountered in the classical methods of preparation. An original technique was sought for crystallization in a metallic solvent. The thermodynamic equilibria between the various phases of the ternary System used were studied in order to justify the method used. The conditions (temperature and composition) were determined in which the cooling of a ternary liquid mixture induces the precipitation of a binary solid solution with the desired composition. If large crystals are to be obtained from the solid solution, metallic solvent precipitation must be replaced by a mono-directional solvent crystallization. The combined effect of a certain number of simple physical phenomena on the stability of a crystal liquid interface was studied: the morphological stability of the crystal growth interface is the first step towards obtaining perfect crystals. (author) [fr

  13. Crystal Systems.

    Science.gov (United States)

    Schomaker, Verner; Lingafelter, E. C.

    1985-01-01

    Discusses characteristics of crystal systems, comparing (in table format) crystal systems with lattice types, number of restrictions, nature of the restrictions, and other lattices that can accidently show the same metrical symmetry. (JN)

  14. Virtual Crystallizer

    Energy Technology Data Exchange (ETDEWEB)

    Land, T A; Dylla-Spears, R; Thorsness, C B

    2006-08-29

    Large dihydrogen phosphate (KDP) crystals are grown in large crystallizers to provide raw material for the manufacture of optical components for large laser systems. It is a challenge to grow crystal with sufficient mass and geometric properties to allow large optical plates to be cut from them. In addition, KDP has long been the canonical solution crystal for study of growth processes. To assist in the production of the crystals and the understanding of crystal growth phenomena, analysis of growth habits of large KDP crystals has been studied, small scale kinetic experiments have been performed, mass transfer rates in model systems have been measured, and computational-fluid-mechanics tools have been used to develop an engineering model of the crystal growth process. The model has been tested by looking at its ability to simulate the growth of nine KDP boules that all weighed more than 200 kg.

  15. Crystal Engineering

    Indian Academy of Sciences (India)

    Nangia (2002). “Today, research areas under the wide umbrella of crystal engineering include: supramolecular synthesis; nanotechnology; separation science and catalysis; supramolecular materials and devices; polymorphism; cocrystals, crystal structure prediction; drug design and ligand–protein binding.”

  16. Physics of extra dimensions

    International Nuclear Information System (INIS)

    Antoniadis, I

    2006-01-01

    Lowering the string scale in the TeV region provides a theoretical framework for solving the mass hierarchy problem and unifying all interactions. The apparent weakness of gravity can then be accounted by the existence of large internal dimensions, in the submillimeter region, and transverse to a braneworld where our universe must be confined. I review the main properties of this scenario and its implications for observations at both particle colliders, and in non-accelerator gravity experiments. Such effects are for instance the production of Kaluza-Klein resonances, graviton emission in the bulk of extra dimensions, and a radical change of gravitational forces in the submillimeter range

  17. Selective Attention to Perceptual Dimensions and Switching between Dimensions

    Science.gov (United States)

    Meiran, Nachshon; Dimov, Eduard; Ganel, Tzvi

    2013-01-01

    In the present experiments, the question being addressed was whether switching attention between perceptual dimensions and selective attention to dimensions are processes that compete over a common resource? Attention to perceptual dimensions is usually studied by requiring participants to ignore a never-relevant dimension. Selection failure…

  18. Synthesis of self-assembled Ge nano crystals employing reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez H, A. [Universidad Autonoma del Estado de Hidalgo, Escuela Superior de Apan, Calle Ejido de Chimalpa Tlalayote s/n, Col. Chimalpa, Apan, Hidalgo (Mexico); Hernandez H, L. A. [IPN, Escuela Superior de Fisica y Matematicas, San Pedro Zacatenco, 07730 Ciudad de Mexico (Mexico); Monroy, B. M.; Santana R, G. [UNAM, Instituto de Investigaciones en Materiales, Apdo. Postal 70-360, 04510 Ciudad de Mexico (Mexico); Santoyo S, J.; Gallardo H, S. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14740, 07300 Ciudad de Mexico (Mexico); Marquez H, A. [Universidad de Guanajuato, Campus Irapuato-Salamanca, Departamento de Ingenieria Agricola, Km. 9 Carretera Irapuato-Silao, 36500 Irapuato, Guanajuato (Mexico); Mani G, P. G.; Melendez L, M. [Universidad Autonoma de Ciudad Juarez, Instituto de Ingenieria y Tecnologia, Departamento de Fisica y Matematicas, 32310 Ciudad Juarez, Chihuahua (Mexico)

    2016-11-01

    This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nano crystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO{sub 2}/Ge/SiO{sub 2} by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO{sub 2} layer buy the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nano crystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps. The surface topography of SiO{sub 2} reference samples was carried out by atomic force microscopy. The crystallographic properties of the samples were studied by grazing incidence X-ray diffraction at 1.5 degrees carried out in a Siemens D-5000 system employing the Cu Kα wavelength. (Author)

  19. Single crystal preparation of CuO

    NARCIS (Netherlands)

    Pieters, Th.W.J.; Nedermeyer, J.

    Single crystals of CuO are prepared by means of sublimation in a closed quartz capsule at 900 °C. The crystals have dimensions of 5 × 2 × 0.2 mm. Doping of the CuO with a few percent In2O3 (1 to 5% In/In + Cu) was necessary for the growth of the crystals. The residue contained CuO-In2O3 spinel.

  20. Extra Dimensions of Space

    Science.gov (United States)

    Lincoln, Don

    2013-01-01

    They say that there is no such thing as a stupid question. In a pedagogically pure sense, that's probably true. But some questions do seem to flirt dangerously close to being really quite ridiculous. One such question might well be, "How many dimensions of space are there?" I mean, it's pretty obvious that there are three:…

  1. Dimension theory and forcing

    Czech Academy of Sciences Publication Activity Database

    Zapletal, Jindřich

    2014-01-01

    Roč. 167, April 15 (2014), s. 31-35 ISSN 0166-8641 R&D Projects: GA AV ČR IAA100190902 Institutional support: RVO:67985840 Keywords : Cohen real * infinite dimension * calibrated ideal Subject RIV: BA - General Mathematics Impact factor: 0.551, year: 2014 http://www.sciencedirect.com/science/article/pii/S0166864114001151

  2. Dimension and extensions

    CERN Document Server

    Aarts, JM

    1993-01-01

    Two types of seemingly unrelated extension problems are discussed in this book. Their common focus is a long-standing problem of Johannes de Groot, the main conjecture of which was recently resolved. As is true of many important conjectures, a wide range of mathematical investigations had developed, which have been grouped into the two extension problems. The first concerns the extending of spaces, the second concerns extending the theory of dimension by replacing the empty space with other spaces. The problem of de Groot concerned compactifications of spaces by means of an adjunction of a set of minimal dimension. This minimal dimension was called the compactness deficiency of a space. Early success in 1942 lead de Groot to invent a generalization of the dimension function, called the compactness degree of a space, with the hope that this function would internally characterize the compactness deficiency which is a topological invariant of a space that is externally defined by means of compact extensions of a...

  3. Crystallization method employing microwave radiation

    International Nuclear Information System (INIS)

    Chu, P.; Dwyer, F.G.; Vartuli, J.C.

    1992-01-01

    This invention relates to a method of crystallizing materials from aqueous crystallization media. Zeolite materials, both natural and synthetic, have been demonstrated in the past to have catalytic properties for various types of hydrocarbon conversion. Certain zeolitic materials are ordered, porous crystalline metallosilicates having a definite crystalline structure as determined by X-ray diffraction within which there are a number of smaller cavities which may be interconnected by a number of still smaller channels or pores. These cavities and pores are uniform in size within a specific zeolite material. Since the dimensions of these pores are such as to accept for adsorption molecules of certain dimensions while rejecting those of large dimensions, these materials have come to be known as molecular sieves and are utilized in a variety of ways to take advantage of these properties. (author). 3 tabs

  4. Nonlinear optics in germanium mid-infrared fiber material: Detuning oscillations in femtosecond mid-infrared spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Ordu

    2017-09-01

    Full Text Available Germanium optical fibers hold great promise in extending semiconductor photonics into the fundamentally important mid-infrared region of the electromagnetic spectrum. The demonstration of nonlinear response in fabricated Ge fiber samples is a key step in the development of mid-infrared fiber materials. Here we report the observation of detuning oscillations in a germanium fiber in the mid-infrared region using femtosecond dispersed pump-probe spectroscopy. Detuning oscillations are observed in the frequency-resolved response when mid-infrared pump and probe pulses are overlapped in a fiber segment. The oscillations arise from the nonlinear frequency resolved nonlinear (χ(3 response in the germanium semiconductor. Our work represents the first observation of coherent oscillations in the emerging field of germanium mid-infrared fiber optics.

  5. Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

    Science.gov (United States)

    Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

    2018-03-01

    In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

  6. Structural and magnetic properties of some pseudo-binary and ternary compounds at high curie temperature prepared in the systems: -) rare earth (Nd, Sm) iron hydrogen, -) gadolinium iron aluminium, and -) uranium iron or cobalt silicon or germanium; Proprietes structurales et magnetiques de quelques composes pseudobinaires et ternaires ferromagnetiques a temperature de curie elevee prepares dans les systemes: -) terres rares Nd Sm fer hydrogene, -) gadolinium fer aluminium, and -) uranium fer ou cobalt silicium ou germanium

    Energy Technology Data Exchange (ETDEWEB)

    Berlureau, T

    1991-07-15

    This work highlights the importance of crystal and chemical studies for understanding the magnetic properties of systems as complex as inter-metallic compounds involving rare-earth elements, uranium, silicon or germanium. With a view of finding new compounds with high Curie temperature and strong magneto-crystal anisotropy, it appears that uranium compounds such as UFe{sub 10}Si{sub 2}, UCo{sub 10}Si{sub 2}, U(Fe{sub 10-x}Co{sub x})Si{sub 2} and U{sub 2}M{sub 17-y}X{sub y} where M is Fe or Co and Y is Si or Ge, are interesting because of the 5f orbital that can form bands through direct overlapping and can link itself very strongly with orbitals of nearby atoms.

  7. Experimental setup for rapid crystallization using favoured chemical ...

    Indian Academy of Sciences (India)

    Unknown

    sent paper we describe a small scale experimental setup for rapid crystallization in which growth is favoured by chemical potential and hydrodynamic conditions. Using this we have grown KH2PO4 (KDP) single crystals up to. 40 × 43 × 66 mm3 in dimensions on a point seed in a glass crystallizer of 5 l capacity in about 72 h.

  8. Crystal-growth Underground Breeding Extra-sensitive Detectors

    Science.gov (United States)

    Mei, Dongming

    2012-02-01

    CUBED (Center for Ultra-Low Background Experiments at DUSEL) collaborators from USD, SDSMT, SDSU, Sanford Lab, and Lawrence Berkeley National Laboratory are working on the development of techniques to manufacture crystals with unprecedented purity levels in an underground environment that may be used by experiments proposed for DUSEL. The collaboration continues to make significant progress toward its goal of producing high purity germanium crystals. High quality crystals are being pulled on a weekly basis at the temporary surface growth facility located on the USD campus. The characterization of the grown crystals demonstrates that the impurity levels are nearly in the range of the needed impurity level for detector-grade crystals. Currently, the crystals are being grown in high-purity hydrogen atmosphere. With an increase in purity due to the zone refining, the group expects to grow high-purity crystals by the end of 2011. The one third of the grown crystals will be manufactured to be detectors; the remaining will be fabricated in to wafers that have large applications in electro and optical devices as well as solar panels. This would allow the research to be connected to market and create more than 30 jobs and multi millions revenues in a few years.

  9. Interactive Dimensioning of Parametric Models

    KAUST Repository

    Kelly, T.

    2015-06-22

    We propose a solution for the dimensioning of parametric and procedural models. Dimensioning has long been a staple of technical drawings, and we present the first solution for interactive dimensioning: A dimension line positioning system that adapts to the view direction, given behavioral properties. After proposing a set of design principles for interactive dimensioning, we describe our solution consisting of the following major components. First, we describe how an author can specify the desired interactive behavior of a dimension line. Second, we propose a novel algorithm to place dimension lines at interactive speeds. Third, we introduce multiple extensions, including chained dimension lines, controls for different parameter types (e.g. discrete choices, angles), and the use of dimension lines for interactive editing. Our results show the use of dimension lines in an interactive parametric modeling environment for architectural, botanical, and mechanical models.

  10. Effective potential of plane channeling in LiH crystal

    International Nuclear Information System (INIS)

    Korkhmazyan, N.A.; Korkhmazyan, N.N.; Babadzhanyan, N.Eh.

    2003-01-01

    The problem on determining the effective potentials of channeling along the charged planes (111) and (11-bar1) in the LiH finite crystal is considered. The criteria of the applicability of the formulae in the case of the infinite crystal are obtained. The estimate of the crystal surface layer value, wherein these formulae are not applicable, is given. In the case, when the crystal dimensions along the z-axis are much smaller, than the particle flight time, then the finite crystal potential behaves inside the crystal similarly to the infinite crystal potential [ru

  11. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing

    2009-06-09

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

  12. Electronic processes in uniaxially stressed p-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  13. Introduction to Extra Dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Rizzo, Thomas G.; /SLAC

    2010-04-29

    Extra dimensions provide a very useful tool in addressing a number of the fundamental problems faced by the Standard Model. The following provides a very basic introduction to this very broad subject area as given at the VIII School of the Gravitational and Mathematical Physics Division of the Mexican Physical Society in December 2009. Some prospects for extra dimensional searches at the 7 TeV LHC with {approx}1 fb{sup -1} of integrated luminosity are provided.

  14. Physics in few dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Emery, V.J.

    1981-03-01

    This article is a qualitative account of some aspects of physics in few dimensions, and its relationship to nonlinear field theories. After a survey of materials and some of the models that have been used to describe them, the various methods of solution are compared and contrasted. The roles of exact results, operator representations and the renormalization group transformation are described, and a uniform picture of the behavior of low-dimensional systems is presented.

  15. Physics in few dimensions

    International Nuclear Information System (INIS)

    Emery, V.J.

    1981-03-01

    This article is a qualitative account of some aspects of physics in few dimensions, and its relationship to nonlinear field theories. After a survey of materials and some of the models that have been used to describe them, the various methods of solution are compared and contrasted. The roles of exact results, operator representations and the renormalization group transformation are described, and a uniform picture of the behavior of low-dimensional systems is presented

  16. Time multiplexed deep reactive ion etching of germanium and silicon-A comparison of mechanisms and application to x-ray optics.

    Science.gov (United States)

    Genova, Vincent J; Agyeman-Budu, David N; Woll, Arthur R

    2018-01-01

    Although the mechanisms of deep reactive ion etching (DRIE) of silicon have been reported extensively, very little by comparison has been discussed concerning DRIE of germanium. By directly comparing silicon and germanium etching in a time multiplexed DRIE process, the authors extract significant differences in etch mechanisms from a design of experiment and discuss how these differences are relevant to the design and fabrication of silicon and germanium collimating channel array x-ray optics. The differences are illuminated by characteristics such as reactive ion etching (RIE)-lag, aspect ratio dependent etching, and sidewall passivation. Specifically, the authors demonstrate the more severe nature of RIE-lag in germanium, especially at aspect ratios exceeding 13:1. In addition, the differences in the profile evolution between silicon and germanium are shown to be a result of differences in sidewall passivation. There is also a correlation between the different sidewall passivation and the inherent lack of scalloping in the case of germanium DRIE.

  17. Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

    DEFF Research Database (Denmark)

    Riskaer, Sven

    1966-01-01

    The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high......-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For n-type germanium we obtain Ξu=18.0±0.5 eV, for n-type silicon Ξu=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally...

  18. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Directory of Open Access Journals (Sweden)

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  19. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  20. Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

    Science.gov (United States)

    Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

    2013-07-31

    Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

  1. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    Energy Technology Data Exchange (ETDEWEB)

    Fast, James E.; Aguayo Navarrete, Estanislao; Evans, Allan T.; VanDevender, Brent A.; Rodriguez, Douglas C.; Wood, Lynn S.

    2011-09-01

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  2. Production of pristine, sulfur-coated and silicon-alloyed germanium nanoparticles via laser pyrolysis

    Science.gov (United States)

    Kim, Seongbeom; Park, Song Yi; Jeong, Jaeki; Kim, Gi-Hwan; Rohani, Parham; Kim, Dong Suk; Swihart, Mark T.; Kim, Jin Young

    2015-07-01

    Here we demonstrate production of three types of germanium containing nanoparticles (NPs) by laser pyrolysis of GeH4 and characterize their sizes, structures and composition. Pristine Ge NPs were fabricated with 50 standard cubic centimeter per minute (sccm) of GeH4 and 25 sccm of SF6 as a photosensitizer gas, while sulfur-coated Ge NPs were produced with 25 sccm of GeH4 and 50 sccm of SF6. The laser pyrolysis of SiH4/GeH4 mixtures produced Si1-xGex alloy NPs. Effects of key process parameters including laser intensity and gas flow rates on NP properties have been investigated. The ability of the laser pyrolysis technique to flexibly produce a variety of germanium-containing NPs, as illustrated in this study shows promise for commercial-scale production of new nanomaterials as high purity dry powders.

  3. RNA Crystallization

    Science.gov (United States)

    Golden, Barbara L.; Kundrot, Craig E.

    2003-01-01

    RNA molecules may be crystallized using variations of the methods developed for protein crystallography. As the technology has become available to syntheisize and purify RNA molecules in the quantities and with the quality that is required for crystallography, the field of RNA structure has exploded. The first consideration when crystallizing an RNA is the sequence, which may be varied in a rational way to enhance crystallizability or prevent formation of alternate structures. Once a sequence has been designed, the RNA may be synthesized chemically by solid-state synthesis, or it may be produced enzymatically using RNA polymerase and an appropriate DNA template. Purification of milligram quantities of RNA can be accomplished by HPLC or gel electrophoresis. As with proteins, crystallization of RNA is usually accomplished by vapor diffusion techniques. There are several considerations that are either unique to RNA crystallization or more important for RNA crystallization. Techniques for design, synthesis, purification, and crystallization of RNAs will be reviewed here.

  4. Germanium enrichment in supergene settings: evidence from the Cristal nonsulfide Zn prospect, Bongará district, northern Peru

    Science.gov (United States)

    Mondillo, Nicola; Arfè, Giuseppe; Herrington, Richard; Boni, Maria; Wilkinson, Clara; Mormone, Angela

    2018-02-01

    Supergene nonsulfide ores form from the weathering of sulfide mineralization. Given the geochemical affinity of Ge to Si4+ and Fe3+, weathering of Ge-bearing sulfides could potentially lead to Ge enrichments in silicate and Fe-oxy-hydroxide minerals, although bulk rock Ge concentrations in supergene nonsulfide deposits are rarely reported. Here, we present the results of an investigation into Ge concentrations and deportment in the Cristal supergene Zn nonsulfide prospect (Bongará, northern Peru), which formed from the weathering of a preexisting Mississippi Valley-type (MVT) sulfide deposit. Material examined in this study originates from drillcore recovered from oxidized Zn-rich bodies 15-20 m thick, containing 5-45 wt% Zn and Ge concentrations 100 ppm. Microanalysis and laser ablation-ICP-MS show that precursor sphalerite is rich in both Fe (mean Fe = 8.19 wt%) and Ge (mean Ge = 142 ppm). Using the mineral geothermometer GGIMFis—geothermometer for Ga, Ge, In, Mn, and Fe in sphalerite—proposed by Frenzel et al. (Ore Geol Rev 76:52-78, 2016), sphalerite trace element data from the Cristal prospect suggest a possible formation temperature ( T GGIMFis) of 225 ± 50 °C, anomalously high for a MVT deposit. Germanium concentrations measured in both goethite (mean values 100 to 229 ppm, max 511 ppm) and hemimorphite (mean values 39 to 137 ppm, max 258 ppm) are similar to concentrations measured in hypogene sphalerite. Additionally, the Ge concentrations recorded in bulk rock analyses of sphalerite-bearing and oxidized samples are also similar. A persistent warm-humid climate is interpreted for the region, resulting in the development of an oxidation zone favoring the formation of abundant Zn hydrosilicates and Fe hydroxides, both able to incorporate Ge in their crystal structure. In this scenario, Ge has been prevented from dispersion during the weathering of the Ge-bearing sulfide bodies and remains in the resultant nonsulfide ore.

  5. Positron annihilation in germanium in thermal equilibrium at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Moriya, Tsuyoshi; Komuro, Naoyuki; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Ikari, Atsushi

    1996-09-01

    Annihilation characteristics of positrons in Ge in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Precise measurements of Doppler broadening profiles of annihilation radiation were performed in the temperature range between 300 K and 1211 K. The line shape parameters of Doppler broadening profiles were found to be almost constant at 300-600 K. The changes in these parameters were observed to start above 600 K. This was attributed to both the decrease in the fraction of positrons annihilating with core electrons and the lowering of the crystal symmetry around the region detected by positron-electron pairs. This suggests that behaviors of positrons are dominated by some form of positron-lattice coupling in Ge at high temperatures. The temperature dependence of the diffusion length of positrons was also discussed. (author)

  6. High-capacity nanostructured germanium-containing materials and lithium alloys thereof

    Science.gov (United States)

    Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

    2010-08-24

    Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0germanium exhibit a combination of improved capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

  7. Perfomance of a high purity germanium multi-detector telescope for long range particles

    International Nuclear Information System (INIS)

    Riepe, G.; Protic, D.; Suekoesd, C.; Didelez, J.P.; Frascaria, N.; Gerlic, E.; Hourani, E.; Morlet, M.

    1980-01-01

    A telescope of stacked high purity germanium detectors designed for long range charged particles was tested using medium energy protons. Particle identification and the rejection of the low energy tail could be accomplished on-line allowing the measurement of complex spectra. The efficiency of the detector stack for protons was measured up to 156 MeV incoming energy. The various factors affecting the energy resolution are discussed and their estimated contributions are compared with the experimental results

  8. Broadband infrared mirror using guided-mode resonance in a subwavelength germanium grating.

    Science.gov (United States)

    Kontio, Juha M; Simonen, Janne; Leinonen, Kari; Kuittinen, Markku; Niemi, Tapio

    2010-08-01

    We demonstrate a broadband mirror for the IR wavelength region comprising a subwavelength grating made of germanium. We design and optimize the guided-mode resonances in the structure for TM-polarized incident light by rigorous electromagnetic simulations. The grating structure is realized by nanoimprint lithography and dry etching. The reflectivity of the mirror is over 95% for the wavelength range between 2245 and 3080nm.

  9. On the timing properties of germanium detectors: The centroid diagrams of prompt photopeaks and Compton events

    International Nuclear Information System (INIS)

    Penev, I.; Andrejtscheff, W.; Protochristov, Ch.; Zhelev, Zh.

    1987-01-01

    In the applications of the generalized centroid shift method with germanium detectors, the energy dependence of the time centroids of prompt photopeaks (zero-time line) and of Compton background events reveal a peculiar behavior crossing each other at about 100 keV. The effect is plausibly explained as associated with the ratio of γ-quanta causing the photoeffect and Compton scattering, respectively, at the boundaries of the detector. (orig.)

  10. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

    Science.gov (United States)

    Rao, Feng; Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang; Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei; Ma, Evan

    2017-12-01

    Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb2Te3) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

  11. A rotator for single-crystal neutron diffraction at high pressure.

    Science.gov (United States)

    Fang, J; Bull, C L; Hamidov, H; Loveday, J S; Gutmann, M J; Nelmes, R J; Kamenev, K V

    2010-11-01

    We present a modified Paris-Edinburgh press which allows rotation of the anvils and the sample under applied load. The device is designed to overcome the problem of having large segments of reciprocal space obscured by the tie rods of the press during single-crystal neutron-scattering experiments. The modified press features custom designed hydraulic bearings and provides controls for precision rotation and positioning. The advantages of using the device for increasing the number of measurable reflections are illustrated with the results of neutron-diffraction experiments on a single crystal of germanium rotated under a load of 70 tonnes.

  12. CDEX-1 1 kg point-contact germanium detector for low mass dark matter searches

    Science.gov (United States)

    Kang, Ke-Jun; Yue, Qian; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, Yo-Chun; Deng, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Yi; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lü, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Lakhwinder, Singh; Manoj, Kumar Singh; Arun, Kumar Soma; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong Tsz-King, Henry; Wu, Shi-Yong; Wu, Wei; Wu, Yu-Cheng; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-12-01

    The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P+ electrode and the outside N+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P+ and N+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments.

  13. Novel Germanium/Polypyrrole Composite for High Power Lithium-ion Batteries

    Science.gov (United States)

    Gao, Xuanwen; Luo, Wenbin; Zhong, Chao; Wexler, David; Chou, Shu-Lei; Liu, Hua-Kun; Shi, Zhicong; Chen, Guohua; Ozawa, Kiyoshi; Wang, Jia-Zhao

    2014-01-01

    Nano-Germanium/polypyrrole composite has been synthesized by chemical reduction method in aqueous solution. The Ge nanoparticles were directly coated on the surface of the polypyrrole. The morphology and structural properties of samples were determined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Thermogravimetric analysis was carried out to determine the polypyrrole content. The electrochemical properties of the samples have been investigated and their suitability as anode materials for the lithium-ion battery was examined. The discharge capacity of the Ge nanoparticles calculated in the Ge-polypyrrole composite is 1014 mAh g−1 after 50 cycles at 0.2 C rate, which is much higher than that of pristine germanium (439 mAh g−1). The composite also demonstrates high specific discharge capacities at different current rates (1318, 1032, 661, and 460 mAh g−1 at 0.5, 1.0, 2.0, and 4.0 C, respectively). The superior electrochemical performance of Ge-polypyrrole composite could be attributed to the polypyrrole core, which provides an efficient transport pathway for electrons. SEM images of the electrodes have demonstrated that polypyrrole can also act as a conductive binder and alleviate the pulverization of electrode caused by the huge volume changes of the nanosized germanium particles during Li+ intercalation/de-intercalation. PMID:25168783

  14. CDEX-1 1 kg point-contact germanium detector for low mass dark matter searches

    International Nuclear Information System (INIS)

    Kang Kejun; Yue Qian; Wu Yucheng

    2013-01-01

    The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P + electrode and the outside N + electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P + and N + electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments. (authors)

  15. Non-local electrical spin injection and detection in germanium at room temperature

    Science.gov (United States)

    Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2017-10-01

    Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

  16. Dimensions of energy efficiency

    International Nuclear Information System (INIS)

    Ramani, K.V.

    1992-01-01

    In this address the author describes three dimensions of energy efficiency in order of increasing costs: conservation, resource and technology substitution, and changes in economic structure. He emphasizes the importance of economic rather than environmental rationales for energy efficiency improvements in developing countries. These countries do not place high priority on the problems of global climate change. Opportunities for new technologies may exist in resource transfer, new fuels and, possibly, small reactors. More research on economic and social impacts of technologies with greater sensitivity to user preferences is needed

  17. Public Value Dimensions

    DEFF Research Database (Denmark)

    Andersen, lotte bøgh; Beck Jørgensen, Torben; Kjeldsen, Anne-Mette

    2012-01-01

    Further integration of the public value literature with other strands of literature within Public Administration necessitates a more specific classification of public values. This paper applies a typology linked to organizational design principles, because this is useful for empirical public...... administration studies. Based on an existing typology of modes of governance, we develop a classification and test it empirically, using survey data from a study of the values of 501 public managers. We distinguish between seven value dimensions (the public at large, rule abidance, societal interests, budget...... the integration between the public value literature and other parts of the Public Administration discipline....

  18. Inhomogeneous compact extra dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Bronnikov, K.A. [Center of Gravity and Fundamental Metrology, VNIIMS, 46 Ozyornaya st., Moscow 119361 (Russian Federation); Budaev, R.I.; Grobov, A.V.; Dmitriev, A.E.; Rubin, Sergey G., E-mail: kb20@yandex.ru, E-mail: buday48@mail.ru, E-mail: alexey.grobov@gmail.com, E-mail: alexdintras@mail.ru, E-mail: sergeirubin@list.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow (Russian Federation)

    2017-10-01

    We show that an inhomogeneous compact extra space possesses two necessary features— their existence does not contradict the observable value of the cosmological constant Λ{sub 4} in pure f ( R ) theory, and the extra dimensions are stable relative to the 'radion mode' of perturbations, the only mode considered. For a two-dimensional extra space, both analytical and numerical solutions for the metric are found, able to provide a zero or arbitrarily small Λ{sub 4}. A no-go theorem has also been proved, that maximally symmetric compact extra spaces are inconsistent with 4D Minkowski space in the framework of pure f ( R ) gravity.

  19. Crystal Data

    Science.gov (United States)

    SRD 3 NIST Crystal Data (PC database for purchase)   NIST Crystal Data contains chemical, physical, and crystallographic information useful to characterize more than 237,671 inorganic and organic crystalline materials. The data include the standard cell parameters, cell volume, space group number and symbol, calculated density, chemical formula, chemical name, and classification by chemical type.

  20. 1. Dimensions of sustainable development

    International Nuclear Information System (INIS)

    Repetto, R.

    1992-01-01

    This chapter discusses the following topics: the concept of sustainable development; envisioning sustainable development (economic dimensions, human dimensions, environmental dimensions, technological dimensions); policy implications (economic policies, people-oriented policies, environmental policies, creating sustainable systems); and global issues (effect of war on development and the environment and the debt burden). This chapter also introduces the case studies by discussing the levels of economic development and comparing key trends (economic growth, human development, population growth, and energy use)

  1. COMPARATIVE ANALYSIS OF ANTHROPOMETRIC DIMENSIONS ...

    African Journals Online (AJOL)

    A comparative analysis of the anthropometric body dimensions of the male and female agricultural workers was conducted in South-Eastern Nigeria to ascertain the variations that exist among the body characteristics/dimensions of the male and female agricultural workers in the area. Thirty (30) anthropometric dimensions ...

  2. Contact Angles and Surface Tension of Germanium-Silicon Melts

    Science.gov (United States)

    Croell, A.; Kaiser, N.; Cobb, S.; Szofran, F. R.; Volz, M.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

  3. Analysis of the dead layer of a detector of germanium with code ultrapure Monte Carlo SWORD-GEANT; Analisis del dead layer de un detector de germanio ultrapuro con el codigo de Monte Carlo SWORDS-GEANT

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, S.; Querol, A.; Ortiz, J.; Rodenas, J.; Verdu, G.

    2014-07-01

    In this paper the use of Monte Carlo code SWORD-GEANT is proposed to simulate an ultra pure germanium detector High Purity Germanium detector (HPGe) detector ORTEC specifically GMX40P4, coaxial geometry. (Author)

  4. Dimensions of trust

    DEFF Research Database (Denmark)

    Frederiksen, Morten

    2012-01-01

    Georg Simmel is the seminal author on trust within sociology, but though inspired by Simmel, subsequent studies of intersubjective trust have failed to address Simmel’s suggestion that trust is as differentiated as the social relations of which it is part. Rather, trust has been studied within...... limited sets of exchange or work relations. This article revisits Simmel’s concept of trust as social form in order to investigate this differentiation. From an interview study, the differentiation and limits of trust are analysed within different types of social relations. Trust is found to vary greatly...... in scope and mode influenced by the intersecting dimensions of relations, objects and situations. Furthermore, trust exists between an outer threshold of expected deceit and an inner threshold of confident reliance. The findings from the qualitative study contribute new knowledge on the diversity of trust...

  5. Flowing to four dimensions

    International Nuclear Information System (INIS)

    Dudas, Emilian; Papineau, Chloe; Rubakov, Valery

    2006-01-01

    We analyze the properties of a model with four-dimensional brane-localized Higgs type potential of a six dimensional scalar field satisfying the Dirichlet boundary condition on the boundary of a transverse two-dimensional compact space. The regularization of the localized couplings generates classical renormalization group running. A tachyonic mass parameter grows in the infrared, in analogy with the QCD gauge coupling in four dimensions. We find a phase transition at a critical value of the bare mass parameter such that the running mass parameter becomes large in the infrared precisely at the compactification scale. Below the critical coupling, the theory is in symmetric phase, whereas above it spontaneous symmetry breaking occurs. Close to the phase transition point there is a very light mode in the spectrum. The massive Kaluza-Klein spectrum at the critical coupling becomes independent of the UV cutoff

  6. Phenomenology of Extra Dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Hewett, J.L.; /SLAC

    2006-11-07

    If the structure of spacetime is different than that readily observed, gravitational physics, particle physics and cosmology are all immediately affected. The physics of extra dimensions offers new insights and solutions to fundamental questions arising in these fields. Novel ideas and frameworks are continuously born and evolved. They make use of string theoretical features and tools and they may reveal if and how the 11-dimensional string theory is relevant to our four-dimensional world. We have outlined some of the experimental observations in particle and gravitational physics as well as astrophysical and cosmological considerations that can constrain or confirm these scenarios. These developing ideas and the wide interdisciplinary experimental program that is charted out to investigate them mark a renewed effort to describe the dynamics behind spacetime. We look forward to the discovery of a higher dimensional spacetime.

  7. Time dimension of marketing

    Directory of Open Access Journals (Sweden)

    Uzelac Nikola

    2004-01-01

    Full Text Available Time dimension of marketing has got its place in literature. For example, the time is basic independent variable in widely accepted concepts of product life cycle and diffusion of innovation. In addition, efforts have been made to bring this issue to the theoretic basis of the discipline. But, some important areas are still under researched, or even disregarded. Moreover, projects directed at investigation of the real behavior of marketing managers are rare, and in normative sense very few options have been advocated. This particularly pertains to the issues of time horizon, durability of relations with customers, timeliness of decision-making, and time allocation by managers and customers. In this regard, the literature of strategic management contains solutions which might be useful, and the ideas of some authors from marketing deserve support.

  8. Liquid crystal tunable photonic crystal dye laser

    DEFF Research Database (Denmark)

    Buss, Thomas; Christiansen, Mads Brøkner; Smith, Cameron

    2010-01-01

    We present a dye-doped liquid crystal laser using a photonic crystal cavity. An applied electric field to the liquid crystal provides wavelength tunability. The photonic crystal enhances resonant interaction with the gain medium.......We present a dye-doped liquid crystal laser using a photonic crystal cavity. An applied electric field to the liquid crystal provides wavelength tunability. The photonic crystal enhances resonant interaction with the gain medium....

  9. Electron, hole and exciton self-trapping in germanium doped silica glass from DFT calculations with self-interaction correction

    International Nuclear Information System (INIS)

    Du Jincheng; Rene Corrales, L.; Tsemekhman, Kiril; Bylaska, Eric J.

    2007-01-01

    Density functional theory (DFT) calculations were employed to understand the refractive index change in germanium doped silica glasses for the trapped states of electronic excitations induced by UV irradiation. Local structure relaxation and excess electron density distribution were calculated upon self-trapping of an excess electron, hole, and exciton in germanium doped silica glass. The results show that both the trapped exciton and excess electron are highly localized on germanium ion and, to some extent, on its oxygen neighbors. Exciton self-trapping is found to lead to the formation of a Ge E' center and a non-bridging hole center. Electron trapping changes the GeO 4 tetrahedron structure into trigonal bi-pyramid with the majority of the excess electron density located along the equatorial line. The self-trapped hole is localized on bridging oxygen ions that are not coordinated to germanium atoms that lead to elongation of the Si-O bonds and change of the Si-O-Si bond angles. We carried out a comparative study of standard DFT versus DFT with a hybrid PBE0 exchange and correlation functional. The results show that the two methods give qualitatively similar relaxed structure and charge distribution for electron and exciton trapping in germanium doped silica glass; however, only the PBE0 functional produces the self-trapped hole

  10. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    Energy Technology Data Exchange (ETDEWEB)

    Volynets, Oleksandr

    2012-07-27

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  11. High-Resolution Electron Energy Loss Studies of Oxygen, Hydrogen, Nitrogen, Nitric Oxide, and Nitrous Oxide Adsorption on Germanium Surfaces.

    Science.gov (United States)

    Entringer, Anthony G.

    The first high resolution electron energy loss spectroscopy (HREELS) studies of the oxidation and nitridation of germanium surfaces are reported. Both single crystal Ge(111) and disordered surfaces were studied. Surfaces were exposed to H, O_2, NO, N _2O, and N, after cleaning in ultra-high vacuum. The Ge surfaces were found to be non-reactive to molecular hydrogen (H_2) at room temperature. Exposure to atomic hydrogen (H) resulted hydrogen adsorption as demonstrated by the presence of Ge-H vibrational modes. The HREEL spectrum of the native oxide of Ge characteristic of nu -GeO_2 was obtained by heating the oxide to 200^circC. Three peaks were observed at 33, 62, and 106 meV for molecular oxygen (O_2) adsorbed on clean Ge(111) at room temperature. These peaks are indicative of dissociative bonding and a dominant Ge-O-Ge bridge structure. Subsequent hydrogen exposure resulted in a shift of the Ge-H stretch from its isolated value of 247 meV to 267 meV, indicative of a dominant +3 oxidation state. A high density of dangling bonds and defects and deeper oxygen penetration at the amorphous Ge surface result in a dilute bridge structure with a predominant +1 oxidation state for similar exposures. Molecules of N_2O decompose at the surfaces to desorbed N_2 molecules and chemisorbed oxygen atoms. In contrast, both oxygen and nitrogen are detected at the surfaces following exposure to NO molecules. Both NO and N_2O appear to dissociate and bond at the top surface layer. Molecular nitrogen (N_2) does not react with the Ge surfaces, however, a precursor Ge nitride is observed at room temperature following exposure to nitrogen atoms and ions. Removal of oxygen by heating of the NO-exposed surface to 550^circC enabled the identification of the Ge-N vibrational modes. These modes show a structure similar to that of germanium nitride. This spectrum is also identical to that of the N-exposed surface heated to 550^circC. Surface phonon modes of the narrow-gap semiconducting

  12. Crystal growth and properties of novel organic nonlinear optical crystals of 4-Nitrophenol urea

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, M. Krishna, E-mail: krishnamohan.m@ktr.srmuniv.ac.in; Ponnusamy, S.; Muthamizhchelvan, C.

    2017-07-01

    Single crystals of 4-Nitrophenol urea have been grown from water using slow evaporation technique at constant temperature, with the vision to improve the properties of the crystals. The unit cell parameters of the grown crystals were determined by single crystal and powder X-Ray diffraction. FTIR studies reveals the presence of different vibrational bands. The Optical studies confirmed that the crystal is transparent up to 360 nm .TGA and DSC studies were carried out to understand the thermal behavior of crystals. The SHG studies show the suitability of the crystals for NLO applications. The etching studies were carried out to study the behavior of the crystals under different conditions.These studies reveal that the crystals of 4-Nitrophenol urea are suitable for device applications. - Highlights: • 4-Nitrophenol urea crystals of dimensions 14 mm × 1 mm were grown. • UV–Visible studies indicate the crystal is transparent in the region of 370–800 nm. • Thermal studies show the crystal starts decomposing at 170 °C. • SHG studies indicate that the crystals have NLO efficiency 3.5 times that of KDP.

  13. Bosonic fields in crystal manifold

    Energy Technology Data Exchange (ETDEWEB)

    Alencar, G., E-mail: geovamaciel@gmail.com [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60440-554 Fortaleza, Ceará (Brazil); Tahim, M.O., E-mail: makarius.tahim@uece.br [Universidade Estadual do Ceará, Faculdade de Educação, Ciências e Letras do Sertão Central, Rua Epitácio Pessoa, 2554, 63.900-000 Quixadá, Ceará (Brazil); Landim, R.R., E-mail: renan@fisica.ufc.br [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60440-554 Fortaleza, Ceará (Brazil); Costa Filho, R.N., E-mail: rai@fisica.ufc.br [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60440-554 Fortaleza, Ceará (Brazil)

    2013-11-04

    A crystal-like universe made of membranes in extra dimensions in a Randall–Sundrum scenario is studied. A background gravitational metric satisfying the right boundary conditions is considered to study the localization of the scalar, gauge and Kalb–Ramond fields. It is found that the wave function for the fields are Bloch waves. The mass modes equations are calculated allowing us to show the zero-gap mass behavior and the mass dispersion relation for each field. Finally we generalize all these results and consider q-forms in the crystal membrane universe. We add the dilaton interaction in order to guarantee localization of forms. We show that, due to the dimension D, the form q and the dilaton coupling λ, the mass spectrum can be the same for the different bosonic fields studied. Such a result is a different way to see the duality between forms.

  14. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

    2005-01-01

    Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

  15. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

    2008-01-01

    Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

  16. Large three-dimensional photonic crystals based on monocrystalline liquid crystal blue phases.

    Science.gov (United States)

    Chen, Chun-Wei; Hou, Chien-Tsung; Li, Cheng-Chang; Jau, Hung-Chang; Wang, Chun-Ta; Hong, Ching-Lang; Guo, Duan-Yi; Wang, Cheng-Yu; Chiang, Sheng-Ping; Bunning, Timothy J; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2017-09-28

    Although there have been intense efforts to fabricate large three-dimensional photonic crystals in order to realize their full potential, the technologies developed so far are still beset with various material processing and cost issues. Conventional top-down fabrications are costly and time-consuming, whereas natural self-assembly and bottom-up fabrications often result in high defect density and limited dimensions. Here we report the fabrication of extraordinarily large monocrystalline photonic crystals by controlling the self-assembly processes which occur in unique phases of liquid crystals that exhibit three-dimensional photonic-crystalline properties called liquid-crystal blue phases. In particular, we have developed a gradient-temperature technique that enables three-dimensional photonic crystals to grow to lateral dimensions of ~1 cm (~30,000 of unit cells) and thickness of ~100 μm (~ 300 unit cells). These giant single crystals exhibit extraordinarily sharp photonic bandgaps with high reflectivity, long-range periodicity in all dimensions and well-defined lattice orientation.Conventional fabrication approaches for large-size three-dimensional photonic crystals are problematic. By properly controlling the self-assembly processes, the authors report the fabrication of monocrystalline blue phase liquid crystals that exhibit three-dimensional photonic-crystalline properties.

  17. Variable-metric diffraction crystals for x-ray optics

    International Nuclear Information System (INIS)

    Smither, R.K.

    1992-01-01

    The term open-quote Variable-Metricclose quotes (V-M) when applied to diffraction crystals refers to a crystal in which the spacing between crystalline planes varies with the position in the crystal. This variation can be either parallel to the crystalline planes or perpendicular to the crystalline planes. The variation in the crystalline spacing of a V-M crystal can be produced by introducing a thermal gradient in the crystal. This approach works well when the over-all percentage change in the lattice spacing is small (less than 0.1 %). For V-M crystals where the over-all change in spacing is the order of 0.1 percent or larger, it is more practical to produce the change in crystal spacing by growing a crystal made of two or more elements and changing the relative percentages of the two elements as the crystal is grown. One of the simplest applications of this type of crystal diffraction optics is to use V-M crystals to increase the number of photon per unit bandwidth in a diffracted x-ray beam. Typical enhancement factors of 3 to 20 are possible with wiggler sources. For near perfect silicon crystals the rocking curve for (111) planes is typically 8.5 arc seconds at 8 keV and 2.6 arc seconds at 20 keV. If one changes the crystalline spacing to match the change in the incident angle of the beam on the crystalline planes, then the full surface of the diffraction crystal will diffract the same wavelength x-ray. The increase in flux per unit bandwidth in the diffracted beam is 6 to 1 and 20 to 1 for the 8 keV and 20 keV x-rays, respectively, for the NSLS example. In most of the experiments the changes in crystalline spacings were generated with thermal gradients. One set of experiments used a V-M crystal grown with a variable percentage of germanium and silicon. This crystal had a 0.1 percent change in crystal spacing in 1 mm of distance in the crystal

  18. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  19. Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

    Science.gov (United States)

    Monmeyran, Corentin; Crowe, Iain F.; Gwilliam, Russell M.; Heidelberger, Christopher; Napolitani, Enrico; Pastor, David; Gandhi, Hemi H.; Mazur, Eric; Michel, Jürgen; Agarwal, Anuradha M.; Kimerling, Lionel C.

    2018-04-01

    Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.

  20. Biological insertion of nanostructured germanium and titanium oxides into diatom biosilica

    Science.gov (United States)

    Jeffryes, Clayton S.

    There is significant interest in titanium oxide and germanium-silicon oxide nanocomposites for optoelectronic, photocatalytic, and solar cell applications. The ability of the marine diatom Pinnularia sp. to uptake soluble metal oxides from cell culture medium, and incorporate them into the micro- and nano-structure of their amorphous silica cell walls, called frustules, was evaluated using an engineered photobioreactor system. The effects of metal oxides on the structural and elemental properties of the frustule were also evaluated. Diatom cell cultures grown in 5 L photobioreactors were initially charged with 0.5 mM of soluble silicon, Si(OH)4, an obligate substrate required for frustule fomation. Upon exhaustion of Si(OH)4 cells were exposed to the mixed pulse-addition of soluble silicon and germanium or co-perfusion addition of soluble silicon and titanium, which were incorporated into the frustules. Metals composition of the cell culture medium, diatom biomass and purified frustules were measured, as was the local elemental composition within the frustule pores and the metal oxide crystallinity. Diatom frustules having a germanium composition of 1.6 wt % were devoid of the native intra-pore structures and possessed enhanced photoluminescence and electroluminescence when compared to frustules without Ge. Diatoms cultivated in the presence of soluble titanium incorporated amorphous titania into the frustule, which maintained native structure even when local TiO2 concentrations within the nanopores approached 60 wt. %. Titanium oxide could also be biomimetically deposited directly within the diatom nanopores by adsorbing poly-L-lysine to the diatom biosilica where it catalyzed the soluble titanium precursor Ti-BALDH into amorphous titania nanoparticles. Both biogenic and biomimetic titania could be converted to anatase titanium by thermal annealing. It was determined that nanostructured metal oxide composites can be fabricated biomimetically or in cell culture to

  1. Pharmacokinetics of germanium after po beta-carboxyethylgermanium sesquioxide in 24 Chinese volunteers.

    Science.gov (United States)

    Long, Q C; Zeng, G X; Zhao, X L

    1996-09-01

    To compare the pharmacokinetics after po different doses of beta-carboxyethylgermanium sesquioxide (Ge-132). An atomic absorption spectrophotometric system was used to measure germanium concentrations in plasma and urine samples after po Ge-132 1 (low dose, LD), 2.5 (medium dose, MD), and 4 (high dose, HD) g.m-2 in 24 healthy volunteers (one dose per 8 subjects). T1/2 alpha (LD, 1.2 +/- 0.7 h; MD, 1.1 +/- 0.6 h; HD, 1.2 +/- 0.5 h), T1/2 beta (LD, 5.2 +/- 1.2 h; MD, 5.8 +/- 2.5 h; HD, 5.5 +/- 1.4 h) and Cl/F (LD, 33 +/- 12 L.h-1; MD, 35 +/- 10 L.h-1; HD, 33 +/- 11 L.h-1) were not dose-related. Tmax was between 0.75 h and 2 h. Cmax (LD, 5.3 +/- 2.2 mg.L-1; MD, 13 +/- 5 mg.L-1; HD 18 +/- 8 mg.L-1, HD) and AUC (LD, 31 +/- 13 mg.h.L-1; MD, 60 +/- 16 mg.h.L-1; HD, 79 +/- 42 mg.h.L-1) were positive correlation to the dose of Ge-132. Urine-eliminated germanium within 24 h accounted for 11 +/- 3% of LD, 9 +/- 3% of MD, and 6 +/- 5% of HD (calculated from Ge/F) and showed a negative correlation to the dose. 1) Intracorporal process of Ge after po Ge-132 coincided with the first-order absorption and elimination with two-compartment kinetic model; 2) The amount of germanium eliminated in urine was below 11%.

  2. Effect of germanium-132 on galactose cataracts and glycation in rats.

    Science.gov (United States)

    Unakar, N J; Johnson, M; Tsui, J; Cherian, M; Abraham, E C

    1995-08-01

    Germanium compounds have been shown to be effective in preventing the formation of advanced glycation end-products and for reversible solubilization of glycated proteins. As protein glycation has been proposed to play a role in lens opacification, we initiated studies to evaluate the effects of 2-carboxyethyl germanium sesquioxide (germanium compound 132 or Ge-132) on galactose-induced cataractogenesis. For this study young Sprague-Dawley rats were fed a 50% galactose diet. One group of rats received topical saline and another group was administered Ge-132 in saline four times a day. The lenses were periodically examined with an ophthalmoscope and at desired intervals processed for light and scanning electron microscopy. Our observations, beginning at 3 days and continuing to 21 days of galactose feeding, exhibited the characteristic galactose-induced morphological alterations, which include the formation of vacuoles, cysts, membrane disruption and swelling of fibers and epithelial cells as well as disorganization of the bow in lenses of rats in both groups. However, in the majority of rats administered Ge-132 these alterations were delayed as compared to the lenses of rats administered saline. Our findings show that, although the initiation, progression and pattern of lens opacification in rats receiving saline and Ge-132 were similar, in the majority of lenses the progression and establishment of mature cataracts in the Ge-132 group of rats were delayed. Analysis of the water-soluble and water-insoluble lens-protein fractions for glycated proteins showed increased levels of the Amadori products and advanced glycation related fluorescent products in galactosemic rats treated with saline eye drops. In rats receiving the topical Ge-132 treatment the levels of these glycation products were substantially reduced to levels lower than control values. Prevention of glycation seems to be a mechanism by which cataract progression is delayed.

  3. Delivery of Erbium:YAG laser radiation through side-firing germanium oxide optical fibers

    Science.gov (United States)

    Ngo, Anthony K.; Fried, Nathaniel M.

    2006-02-01

    The Erbium:YAG laser is currently being tested experimentally for endoscopic applications in urology, including more efficient laser lithotripsy and more precise incision of urethral strictures than the Holmium:YAG laser. While side-firing silica fibers are available for use with the Ho:YAG laser in urology, no such fibers exist for use with the Er:YAG laser. These applications may benefit from the availability of a side-firing, mid-infrared optical fiber capable of delivering the laser radiation at a 90-degree angle to the tissue. The objective of this study is to describe the simple construction and characterization of a side-firing germanium oxide fiber for potential use in endoscopic laser surgery. Side-firing fibers were constructed from 450-micron-core germanium oxide fibers of 1.45-m-length by polishing the distal tip at a 45-degree angle and placing a 1-cm-long protective quartz cap over the fiber tip. Er:YAG laser radiation with a wavelength of 2.94 microns, pulse duration of 300 microseconds, pulse repetition rate of 3 Hz, and pulse energies of from 5 to 550 mJ was coupled into the fibers. The fiber transmission rate and damage threshold measured 48 +/- 4 % and 149 +/- 37 mJ, respectively (n = 6 fibers). By comparison, fiber transmission through normal germanium oxide trunk fibers measured 66 +/- 3 %, with no observed damage (n = 5 fibers). Sufficient pulse energies were transmitted through the side-firing fibers for contact tissue ablation. Although these initial tests are promising, further studies will need to be conducted, focusing on assembly of more flexible, smaller diameter fibers, fiber bending transmission tests, long-term fiber reliability tests, and improvement of the fiber output spatial beam profile.

  4. Neutrino and dark matter physics with sub-KeV Germanium detectors

    Science.gov (United States)

    Li, Hau Bin; (TEXONO Collaboration

    2016-05-01

    Germanium detectors with sub-keV sensitivities [1, 2, 3] offer a unique opportunity to study neutrino interactions and properties [4] as well as to search for light WIMP Dark Matter [5, 6]. The TEXONO and CDEX Collaborations have been pursuing this research program at the Kuo-Sheng Neutrino Laboratory in Taiwan and in the China Jinping Underground Laboratory in China. We will present highlights of the detector R&D program which allow us to experimental probe this new energy window. The results, status and plans of our neutrino physics program will be discussed, with focus on the quest on neutrino-nucleus coherent scattering.

  5. [Studies on the hydroxyl free radical-scavenging effect of combined selenium and germanium].

    Science.gov (United States)

    Wu, Z; Chen, X; Yang, K; Xia, T

    2001-07-01

    The effect of selenium, carboxyethyl-germanium sesquioxide (Ge-132) and the combination of selenium and Ge-132 on the production of hydroxyl free radical in liver microsomes of rats treated with Fe2SO4-NADPH system was studied with electron spin resonance technique (ESR). The results showed that the production of hydroxyl free radical was decreased significantly by adding selenium, Ge-132 and combined selenium and Ge-132, indicating a direct scavenging effect on hydroxyl free radical. It was also observed a enhanced scavenging effect at the low concentration of combined selenium and Ge-132.

  6. Nephrotoxicity and neurotoxicity in humans from organogermanium compounds and germanium dioxide.

    Science.gov (United States)

    Schauss, A G

    1991-06-01

    There is no known biological requirement for germanium (Ge), germanates, or any organogermanium compound. Ge deficiency has not been demonstrated in any animal. The estimated average dietary intake of Ge in humans is 1.5 mg/d. Ge is widely distributed in edible foods, all of which, with few exceptions, contain less than 5 ppm Ge, since higher levels are toxic to most plants. Ingestion of Ge compounds has been shown to produce toxic effects in experimental animals. In recent years inorganic germanium salts and novel organogermanium compounds, such as carboxyethyl germanium sesquioxide (Ge-132) and lactate-citrate-germanate (Ge lactate citrate) have been sold as "nutritional supplements" in some countries for their purported immunomodulatory effects or as health-producing elixirs, resulting in intakes of Ge significantly exceeding the estimated average dietary intake. Since 1982, there have been 18 reported cases of acute renal dysfunction or failure, including two deaths, linked to oral intake of Ge elixirs containing germanium dioxide (GeO2) or Ge-132. In these cases, biopsies show vacuolar degeneration in renal tubular epithelial cells, without proteinuria or hematuria, in the absence of glomerular changes. Serum creatinine levels have been well above 400 mumol/L in such patients. In 17 of 18 cases, accumulated elemental Ge intakes reportedly ranged between 16 to 328 g over a 4-36 mo period, or between 100 to 2000 times the average estimated dietary intake for human. In surviving patients, renal function improved after discontinuation of Ge supplementation. However, in no case was recovery complete. One organogermanium compound, an azaspiran organogermanium compound, 2-aza-8-germanspiro[4,5] decane-2-propamine-8,8-diethyl-N,N-dimethyl dichloride (spirogermanium), has been found to cause both neurotoxicity and pulmonary toxicity in phase I and II studies examining its chemotherapeutic potential as an antitumor drug in the treatment of various malignancies. In

  7. Complete remission of pulmonary spindle cell carcinoma after treatment with oral germanium sesquioxide.

    Science.gov (United States)

    Mainwaring, M G; Poor, C; Zander, D S; Harman, E

    2000-02-01

    Spindle cell carcinoma (SCC) is a rare form of lung cancer representing 0.2 to 0.3% of all primary pulmonary malignancies. Even with combined surgery, chemotherapy, and radiation therapy, these tumors are associated with a poor prognosis and only 10% of patients survive 2 years after diagnosis. We describe a patient with an unresectable SCC who, following no response to conventional treatment with combined modality therapy, chose to medicate herself with daily doses of germanium obtained in a health food store. She noted prompt symptomatic improvement and remains clinically and radiographically free of disease 42 months after starting her alternative therapy.

  8. Diffusion of E centers in germanium predicted using GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-08-17

    Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

  9. Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

    International Nuclear Information System (INIS)

    Vo, D.T.

    1998-01-01

    Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy

  10. Co-doping with antimony to control phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  11. Bulk and surface event identification in p-type germanium detectors

    Science.gov (United States)

    Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

    2018-04-01

    The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

  12. Dimensions of ecosystem theory

    International Nuclear Information System (INIS)

    O'Neill, R.V.; Reichle, D.E.

    1979-01-01

    Various dimensions of ecosystem structure and behavior that seem to develop from the ubiquitous phenomena of system growth and persistence were studied. While growth and persistence attributes of ecosystems may appear to be simplistic phenomena upon which to base a comprehensive ecosystem theory, these same attributes have been fundamental to the theoretical development of other biological disciplines. These attributes were explored at a hierarchical level in a self-organizing system, and adaptive system strategies that result were analyzed. Previously developed causative relations (Reichle et al., 1975c) were examined, their theoretical implications expounded upon, and the assumptions tested with data from a variety of forest types. The conclusions are not a theory in themselves, but a state of organization of concepts contributing towards a unifying theory, along the lines promulgated by Bray (1958). The inferences drawn rely heavily upon data from forested ecosystems of the world, and have yet to be validated against data from a much more diverse range of ecosystem types. Not all of the interpretations are logically tight - there is room for other explanations, which it is hoped will provide fruitful grounds for further speculation

  13. Synthesis, crystal structure, thermal analysis and dielectric ...

    Indian Academy of Sciences (India)

    2.2 X-ray structure determination. Two transparent parallelepipedic crystals with dimensions,. 0.20 × 0.12 × 0.04 and 0.26 × 0.14 × 0.12, were chosen from the preparation. The intensity data were collected on. An APEX II diffractometer with graphite–crystal monochro- mated MoKα radiation (0.71073 Å). Lorentz and polariz-.

  14. Experimental study of pair creation and radiation in Ge crystals at ultrarelativistic energies (30-200 GeV)

    International Nuclear Information System (INIS)

    Belkacem, A.; Chevallier, M.; IN2P3); Bologna, G.; IN2P3)

    1986-04-01

    The aim of this paper is to present and discuss recent studies performed at CERN (NA 33 collaboration) on the pair creation rate of high energy photons and on the radiation of high energy electrons and positrons in germanium crystals. Our previous measurements have already been published 11-13 . We observed that the pair production rate for photons aligned with the axial direction of a Ge crystal increases rapidly with energy, in good agreement with the theoretical predictions, and the study of the tilt angle dependence shows that the process does not depend on whether the created charged particles are channeled or not

  15. Nucleation and crystal growth in batch crystallizers

    NARCIS (Netherlands)

    Janse, A.H.

    1977-01-01

    The aim of the present work is to gain knowledge of the mechanism of formation of the crystal size distribution in batch crystallizers in order to give directives for design and operation of batch crystallizers. The crystal size distribution is important for the separation of crystals and mother

  16. Anomalous Dimensions of Conformal Baryons

    DEFF Research Database (Denmark)

    Pica, Claudio; Sannino, Francesco

    2016-01-01

    We determine the anomalous dimensions of baryon operators for the three color theory as function of the number of massless flavours within the conformal window to the maximum known order in perturbation theory. We show that the anomalous dimension of the baryon is controllably small, within...

  17. Physics with large extra dimensions

    Indian Academy of Sciences (India)

    Furthermore, our world must be confined to live on a brane transverse to these large dimensions, with which it ... this scenario which gives a new theoretical framework for solving the gauge hierarchy problem and the ... of the possible existence of extra dimensions accessible to future accelerators [2]. The main theoretical ...

  18. Saliency of social comparison dimensions

    NARCIS (Netherlands)

    Kuyper, H.

    2007-01-01

    The present article discusses a theory of the saliency of social comparison dimensions and presents the results of an experiment about the effects of two different experimental situations on the saliency of exterior, task-related and socio-emotional dimensions. Saliency was operationalized with a

  19. Mathematics Teachers' Criteria of Dimension

    Science.gov (United States)

    Ural, Alattin

    2014-01-01

    The aim of the study is to determine mathematics teachers' decisions about dimensions of the geometric figures, criteria of dimension and consistency of decision-criteria. The research is a qualitative research and the model applied in the study is descriptive method on the basis of general scanning model. 15 mathematics teachers attended the…

  20. Beta Function and Anomalous Dimensions

    DEFF Research Database (Denmark)

    Pica, Claudio; Sannino, Francesco

    2011-01-01

    We demonstrate that it is possible to determine the coefficients of an all-order beta function linear in the anomalous dimensions using as data the two-loop coefficients together with the first one of the anomalous dimensions which are universal. The beta function allows to determine the anomalous...

  1. supersymmetry breaking with extra dimensions

    Indian Academy of Sciences (India)

    mechanism for (super)symmetry breaking, proposed first by Scherk and Schwarz, where extra dimensions play a crucial role. The last part is devoted to the description of some recent results and of some open problems. Keywords. Supersymmetry; supergravity; extra dimensions. PACS Nos 11.25.Мj; 11.25.Wx; 11.25.

  2. supersymmetry breaking with extra dimensions

    Indian Academy of Sciences (India)

    This talk reviews some aspects of supersymmetry breaking in the presence of extra dimensions. The first part is a general introduction, recalling the motivations for supersymmetry and extra dimensions, as well as some unsolved problems of four-dimensional models of supersymmetry breaking. The central part is a more ...

  3. Comparison between a position sensitive germanium detector and a taper optics CCD ``FRELON'' camera for diffraction enhanced imaging

    Science.gov (United States)

    Bravin, A.; Fiedler, S.; Coan, P.; Labiche, J.-C.; Ponchut, C.; Peterzol, A.; Thomlinson, W.

    2003-09-01

    Diffraction Enhanced Imaging (DEI) can significantly improve the expressiveness of radiology. The contrast mechanism of DEI, in addition to absorption contrast, exploits the differences in X-ray refraction properties, which are sensed by a perfect crystal placed between the sample and the detector. DEI needs a monochromatic collimated X-ray source, which is available for instance from synchrotrons. The X-ray beam is laminar and the sample is vertically scanned for projection imaging or is rotated for CT. Detectors should match the beam characteristics and should also accomplish the other two main requirements for DEI mammography: high spatial resolution and high Detective Quantum Efficiency (DQE) in a large energy range (20-60 keV). The first permit to exploit the edge contrast enhancement obtained with the DEI technique, for example the improved visualization of microcalcifications in mammographic imaging. The second allows minimizing the dose needed for a radiograph without sacrificing spatial resolution. Apart from this, a dynamic range as good as possible is required (typically from 14 to 16 bits) as well as a high readout speed, which is particularly important for CT. These specifications are difficult to be all condensed in a single detector. At the medical beamline of the ESRF two devices have been utilized for DEI radiography: a linear germanium detector (432 pixels, 350 microns pitch), which had been developed for angiography and cerebral CT and a 2048×2048 CCD camera with taper optics which has been built at the ESRF. The first detector shows an excellent DQE at zero frequency in a large energy range (˜90% from 20 keV up to 50 keV) but limited spatial resolution. In the latter a better compromise for DEI in the 20-30 keV range has been realized: a pixel size of 47 μm and a DQE(0) from 0.5 to 0.6 has been achieved. The performances of the two detectors will be presented here in detail and discussed.

  4. Helium crystals

    International Nuclear Information System (INIS)

    Lipson, S.G.

    1987-01-01

    Hexagonal close-packed helium crystals in equilibrium with superfluid have been found to be one of the few systems in which an anisotropic solid comes into true thermodynamic equilibrium with its melt. The discovery of roughening transitions at the liquid-solid interface have shown this system to be ideal for the study of the statistical mechanics of interface structures. We describe the effect of roughening on the shape and growth of macroscopic crystals from both the theoretical and experimental points of view. (author)

  5. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    International Nuclear Information System (INIS)

    Burks, M.

    2008-01-01

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument

  6. Astroparticle physics with a customized low-background broad energy Germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

    2011-10-01

    The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  7. Determination of tin and germanium with nonylfluorone and polymeric flocculants in plant materials

    Directory of Open Access Journals (Sweden)

    Lidiya A. Ivanitsa

    2016-08-01

    Full Text Available New analytical systems «polymeric flocculant (PF−nonylfluorone (NF−metal ion» were proposed for spectrophotometric determination of germanium and tin in plant materials. It is shown the higher efficiency of the modifying action of PF nonionic nature (polyvinylpyrrolidone, PVP compared with the cationic PF polyhexamethyleneguanidine chloride. The presence of PVP increases absorbance complex solutions of both metals on 3.5 times. It is found that the compositions of binary complex Ge(IV and Sn(IV being equal to 1:2 in the presence of PF. The interval of optimum values of acidity is pH 1−4, concentration of modifier (PVP is 0.16 g/L. The difference in absorption of solutions PF–NF–metal and reference solution depends linearly on the concentration of metal in the range of 0.01−0.06 μg Ge(IV/mL (ε=1.35∙105, λ=515 nm and 0.18-0.90 μg Sn(IV/mL (ε=4.2∙104, λ=520 nm. The developed method was tested in the determination of germanium in garlic and aloe and tin in pomegranate. The correctness of the results were confirmed by independent spectrophotometric methods which used phenylfluorone and quercetin as reagents.

  8. Surface passivation of high-purity germanium gamma-ray detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

    1993-01-01

    The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

  9. Molybdenum blue reaction and determination of phosphorus in waters containing arsenic, silicon, and germanium

    Science.gov (United States)

    Levine, H.; Rowe, J.J.; Grimaldi, F.S.

    1955-01-01

    Microgram amounts of phosphate are usually determined by the molybdenum blue reaction, but this reaction is not specific for phosphorus. The research established the range of conditions under which phosphate, arsenate, silicate, and germanate give the molybdenum blue reaction for differentiating these elements, and developed a method for the determination of phosphate in waters containing up to 10 p.p.m. of the oxides of germanium, arsenic(V), and silicon. With stannous chloride or 1-amino-2-naphthol-4-sulfonic acid as the reducing agent no conditions were found for distinguishing silicate from germanate and phosphate from arsenate. In the recommended procedure the phosphate is concentrated by coprecipitation on aluminum hydroxide, and coprecipitated arsenic, germanium, and silicon are volatilized by a mixture of hydrofluoric, hydrochloric, and hydrobromic acids prior to the determination of phosphate. The authors are able to report that the total phosphorus content of several samples of sea water from the Gulf of Mexico ranged from 0.018 to 0.059 mg. of phosphorus pentoxide per liter of water.

  10. Astroparticle physics with a customized low-background broad energy Germanium detector

    International Nuclear Information System (INIS)

    Aalseth, C.E.; Amman, M.; Avignone, F.T.; Back, H.O.; Barabash, A.S.; Barbeau, P.S.; Bergevin, M.; Bertrand, F.E.; Boswell, M.; Brudanin, V.; Bugg, W.; Burritt, T.H.; Busch, M.; Capps, G.; Chan, Y.-D.; Collar, J.I.; Cooper, R.J.; Creswick, R.; Detwiler, J.A.

    2011-01-01

    The MAJORANA Collaboration is building the MAJORANA DEMONSTRATOR, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The MAJORANA DEMONSTRATOR will search for neutrinoless double-beta decay of 76 Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c 2 mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the MAJORANA Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  11. Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

    Directory of Open Access Journals (Sweden)

    Saharin Nurul Syazlin Binti

    2017-01-01

    Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

  12. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

  13. Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

    International Nuclear Information System (INIS)

    Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

    2000-01-01

    Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

  14. Theoretical study of the localization-delocalization transition in amorphous molybdenum-germanium alloys

    International Nuclear Information System (INIS)

    Ding, K.; Andersen, H.C.

    1987-01-01

    Electronic structure calculations were performed for amorphous germanium and amorphous alloys of molybdenum and germanium. The calculations used Harrison's universal linear-combination-of-atomic-orbitals parameters to generate one-electron Hamiltonians for structural configurations obtained from molecular-dynamics simulations. The density of states calculated for a model of a-Ge showed a distinct pseudogap, although with an appreciable density of states at the minimum. The states in the pseudogap are localized. As the concentration of Mo atoms increases, the pseudogap of the density of states is gradually filled up. The density of states at the Fermi energy calculated for our model of the alloys agrees quite well with that experimentally determined by Yoshizumi, Geballe, and co-workers. The localization index for the states at the Fermi energy is a decreasing function of Mo concentration in the range of 2--14 at. % Mo and the localization length is an increasing function of molybdenum concentration. These results are consistent with the experimental observation of an insulator-metal transition at about 10 at. % Mo

  15. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

    Directory of Open Access Journals (Sweden)

    Pulci Olivia

    2010-01-01

    Full Text Available Abstract Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly mainstream when its cost will be comparable to other energy sources. One way is to significantly enhance device efficiencies, for example by increasing the number of band gaps in multijunction solar cells or by favoring charge separation in the devices. This can be done by using cells based on nanostructured semiconductors. In this paper, we will present ab-initio results of the structural, electronic and optical properties of (1 silicon and germanium nanoparticles embedded in wide band gap materials and (2 mixed silicon-germanium nanowires. We show that theory can help in understanding the microscopic processes important for devices performances. In particular, we calculated for embedded Si and Ge nanoparticles the dependence of the absorption threshold on size and oxidation, the role of crystallinity and, in some cases, the recombination rates, and we demonstrated that in the case of mixed nanowires, those with a clear interface between Si and Ge show not only a reduced quantum confinement effect but display also a natural geometrical separation between electron and hole.

  16. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  17. An introduction to extra dimensions

    International Nuclear Information System (INIS)

    Perez-Lorenzana, Abdel

    2005-01-01

    Models that involve extra dimensions have introduced completely new ways of looking up on old problems in theoretical physics. The aim of the present notes is to provide a brief introduction to the many uses that extra dimensions have found over the last few years, mainly following an effective field theory point of view. Most parts of the discussion are devoted to models with flat extra dimensions, covering both theoretical and phenomenological aspects. We also discuss some of the new ideas for model building where extra dimensions may play a role, including symmetry breaking by diverse new and old mechanisms. Some interesting applications of these ideas are discussed over the notes, including models for neutrino masses and proton stability. The last part of this review addresses some aspects of warped extra dimensions, and graviton localization

  18. Crystal phases of calcium carbonate within otoliths of Cyprinus ...

    African Journals Online (AJOL)

    Significant differences of the dimensions of crystalline cells of vaterites exist between these two localities, which reveals that crystal structure of vaterite polymorphs seem sensitive to water quality and water environment, its crystalline cell dimensions might be a potential proxy for monitoring the change of water quality.

  19. Single crystal neutron diffraction study of triglycine sulphate revisited

    Indian Academy of Sciences (India)

    atom positions in TGS crystals, neutron diffraction study on TGS was once again undertaken, since neutron diffraction is known to be the only method, which gives exact hydrogen atom position. 2. Experiment. A clear rectangular single crystal of TGS of dimension 3×3.5×3 mm was loaded on a goniometer, which was then ...

  20. Therapeutic Crystals

    Science.gov (United States)

    Bond, Charles S.

    2014-01-01

    Some readers might not fully know what the difference is between crystallography, and the "new age" practice of dangling crystals around the body to capitalise on their healing energy. The latter is often considered to be superstition, while ironically, the former has actually resulted in real rationally-based healing of human diseases…

  1. Ribbon Crystals

    DEFF Research Database (Denmark)

    Bohr, Jakob; Markvorsen, Steen

    2013-01-01

    A repetitive crystal-like pattern is spontaneously formed upon the twisting of straight ribbons. The pattern is akin to a tessellation with isosceles triangles, and it can easily be demonstrated with ribbons cut from an overhead transparency. We give a general description of developable ribbons...

  2. Equation of state, nonlinear elastic response, and anharmonic properties of diamond-cubic silicon and germanium. First-principles investigation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenju [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Gu, Jianbing [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Sichuan Univ., Chengdu (China). College of Physical Science and Technology; Kuang, Xiaoyu [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Xiang, Shikai [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics

    2015-10-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grueneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  3. Reaction studies of hot silicon, germanium and carbon atoms: Progress report, February 1, 1985-July 31, 1987

    International Nuclear Information System (INIS)

    Gaspar, P.P.

    1987-01-01

    The experimental approach toward attaining the goals of this research program is briefly outlined, and the progress made in the 1985 to 1987 period is reviewed in sections entitled: (1) reactions of recoiling silicon atoms; (2) reactions of recoiling carbon atoms; and (3) reactions of thermally evaporated germanium atoms

  4. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  5. DNA Brick Crystals with Prescribed Depth

    Science.gov (United States)

    Ke, Yonggang; Ong, Luvena L.; Sun, Wei; Song, Jie; Dong, Mingdong; Shih, William M.; Yin, Peng

    2014-01-01

    We describe a general framework for constructing two-dimensional crystals with prescribed depth and sophisticated three-dimensional features. These crystals may serve as scaffolds for the precise spatial arrangements of functional materials for diverse applications. The crystals are self-assembled from single-stranded DNA components called DNA bricks. We demonstrate the experimental construction of DNA brick crystals that can grow to micron-size in the lateral dimensions with precisely controlled depth up to 80 nanometers. They can be designed to display user-specified sophisticated three-dimensional nanoscale features, such as continuous or discontinuous cavities and channels, and to pack DNA helices at parallel and perpendicular angles relative to the plane of the crystals. PMID:25343605

  6. Thermal dimension of quantum spacetime

    Energy Technology Data Exchange (ETDEWEB)

    Amelino-Camelia, Giovanni, E-mail: amelino@roma1.infn.it [Dipartimento di Fisica, Università “La Sapienza” and Sez. Roma1 INFN, P.le A. Moro 2, 00185 Roma (Italy); Brighenti, Francesco [Theoretical Physics, Blackett Laboratory, Imperial College, London, SW7 2BZ (United Kingdom); Dipartimento di Fisica e Astronomia dell' Università di Bologna and Sez. Bologna INFN, Via Irnerio 46, 40126 Bologna (Italy); Gubitosi, Giulia [Theoretical Physics, Blackett Laboratory, Imperial College, London, SW7 2BZ (United Kingdom); Santos, Grasiele [Dipartimento di Fisica, Università “La Sapienza” and Sez. Roma1 INFN, P.le A. Moro 2, 00185 Roma (Italy)

    2017-04-10

    Recent results suggest that a crucial crossroad for quantum gravity is the characterization of the effective dimension of spacetime at short distances, where quantum properties of spacetime become significant. This is relevant in particular for various scenarios of “dynamical dimensional reduction” which have been discussed in the literature. We are here concerned with the fact that the related research effort has been based mostly on analyses of the “spectral dimension”, which involves an unphysical Euclideanization of spacetime and is highly sensitive to the off-shell properties of a theory. As here shown, different formulations of the same physical theory can have wildly different spectral dimension. We propose that dynamical dimensional reduction should be described in terms of the “thermal dimension” which we here introduce, a notion that only depends on the physical content of the theory. We analyze a few models with dynamical reduction both of the spectral dimension and of our thermal dimension, finding in particular some cases where thermal and spectral dimension agree, but also some cases where the spectral dimension has puzzling properties while the thermal dimension gives a different and meaningful picture.

  7. Meniscus Imaging for Crystal-Growth Control

    Science.gov (United States)

    Sachs, E. M.

    1983-01-01

    Silicon crystal growth monitored by new video system reduces operator stress and improves conditions for observation and control of growing process. System optics produce greater magnification vertically than horizontally, so entire meniscus and melt is viewed with high resolution in both width and height dimensions.

  8. Preimage entropy dimension of topological dynamical systems

    OpenAIRE

    Liu, Lei; Zhou, Xiaomin; Zhou, Xiaoyao

    2014-01-01

    We propose a new definition of preimage entropy dimension for continuous maps on compact metric spaces, investigate fundamental properties of the preimage entropy dimension, and compare the preimage entropy dimension with the topological entropy dimension. The defined preimage entropy dimension holds various basic properties of topological entropy dimension, for example, the preimage entropy dimension of a subsystem is bounded by that of the original system and topologically conjugated system...

  9. The search for extra dimensions

    International Nuclear Information System (INIS)

    Abel, Steven; March-Russell, John

    2000-01-01

    The possibility of extra dimensions, beyond the three dimensions of space of our everyday experience, sometimes crops up as a convenient, if rather vague, plot in science fiction. In science, however, the idea of extra dimensions has a rich history, dating back at least as far as the 1920s. Recently there has been a remarkable renaissance in this area due to the work of a number of theoretical physicists. It now seems possible that we, the Earth and, indeed, the entire visible universe are stuck on a membrane in a higher-dimensional space, like dust particles that are trapped on a soap bubble. In this article the authors look at the major issues behind this new development. Why, for example, don't we see these extra dimensions? If they exist, how can we detect them? And perhaps the trickiest question of all: how did this fanciful idea come to be considered in the first place? (U.K.)

  10. Phonon manipulation with phononic crystals.

    Energy Technology Data Exchange (ETDEWEB)

    Kim Bongsang; Hopkins, Patrick Edward; Leseman, Zayd C.; Goettler, Drew F.; Su, Mehmet F. (University of New Mexico, Albuquerque, NM); El-Kady, Ihab Fathy; Reinke, Charles M.; Olsson, Roy H., III

    2012-01-01

    factor. In addition, the techniques and scientific understanding developed in the research can be applied to a wide range of materials, with the caveat that the thermal conductivity of such a material be dominated by phonon, rather than electron, transport. In particular, this includes several thermoelectric materials with attractive properties at elevated temperatures (i.e., greater than room temperature), such as silicon germanium and silicon carbide. It is reasonable that phononic crystal patterning could be used for high-temperature thermoelectric devices using such materials, with applications in energy scavenging via waste-heat recovery and thermoelectric cooling for high-performance microelectronic circuits. The only part of the ZT picture missing in this work was the experimental measurement of the Seebeck coefficient of our phononic crystal devices. While a first-order approximation indicates that the Seebeck coefficient should not change significantly from that of bulk silicon, we were not able to actually verify this assumption within the timeframe of the project. Additionally, with regards to future high-temperature applications of this technology, we plan to measure the thermal conductivity reduction factor of our phononic crystals as elevated temperatures to confirm that it does not diminish, given that the nominal thermal conductivity of most semiconductors, including silicon, decreases with temperature above room temperature. We hope to have the opportunity to address these concerns and further advance the state-of-the-art of thermoelectric materials in future projects.

  11. Keynote speech: Dimensions of Change

    DEFF Research Database (Denmark)

    Jørgensen, Kenneth Mølbjerg

    2004-01-01

    The presentation seeks to construct a framework for understanding knowledge and knowledge work. I argue that knowledge may be understood as a social construction of reality. I argue that people construct their reality by integrating four dimensions of reality: Facts, logic, values and communicati...... introduce a basic framework for understanding knowledge. This is done by means of Wittgenstein's concept of language games. Second, I introduce the four dimensions of reality. Third I relate the model to the disciplines organizational learning and knowledge management...

  12. Occlusal vertical dimension. Review article

    OpenAIRE

    Alvítez Temoche, Daniel Augusto; Facultad de Odontología de la Universidad Nacional Mayor de San Marcos.

    2016-01-01

    Modication of occlusal vertical dimension is a procedure that is often necessary for complex oral reha-bilitation treatments to get a functional occlusal for patients. is literature review was made on databases: Medline (PubMed), Scopus, Scielo, BSV (Bireme), ISI (Web of science) and Lilacs using the keywords “occlusal vertical dimension”,”altered vertical dimension”, “temporomandibular joint”, and “masticatory muscles”. It can be said that the management of occlusal vertical dimension is a s...

  13. Electron paramagnetic resonance and luminescence of chromium in calcium germanate crystals

    CERN Document Server

    Gorshkov, O N; Tyurin, S A; Chigineva, A B; Chigirinskij, Y I

    2002-01-01

    One observed luminescence of Cr sup 4 sup + :Ca sub 2 GeO sub 4 single crystals near 1.3 mu m wave length at excitation by a semiconducting laser up to 573 K. At T < 110 K one detected the EPR spectrum identified as one belonging to Cr sup 4 sup + ions substituting for germanium. One determined the components of g-tensor and its basic axes. In calcium germanate this impurity centre slightly violates crystal symmetry. Detected deviation from the Curie law in EPR temperature dependence is explained by transition into the excited state with activation low energy. The giant efficient multiplicity of degeneration of the excited state is explained by induction of soft phonon modes of crystal at excitation of a defect

  14. Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals

    CERN Document Server

    Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.

    2005-01-01

    The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...

  15. Progress in art and science of crystal growth and its impacts on modern society

    Science.gov (United States)

    Nishinaga, Tatau

    2015-05-01

    The impacts of the progress in the art and science of crystal growth on human life are reviewed. Even before the invention of the transistor, quartz and corundum crystals were used as crystal oscillators and jewel bearings, respectively. However, a major impact of crystal growth on society was experienced with the invention of the transistor, which required high-purity and perfect germanium crystals. Once the importance of crystal growth was clearly recognized, the science of crystal growth also extensively developed. The growth of single crystalline silicon allows us to produce integrated circuits, which are used in all the electronic devices in everyday use. The technological developments in the growth of compound semiconductors have also had a large impact on society through the inventions of the laser diode for optical communication and the p-n junction nitride light-emitting diode toward the realization of a less energy-intensive society. The latter invention was awarded the 2014 Nobel Prize in Physics. Finally, future aspects of crystal growth are discussed.

  16. Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

    Science.gov (United States)

    Ownby, Gary W.; White, Clark W.; Zehner, David M.

    1981-01-01

    This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10.sup.-8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm.sup.2.

  17. Determination of the Peltier Coefficient of Germanium in a Vertical Bridgeman-Stockbarger Furnace

    Science.gov (United States)

    Weigel, Michaela E. K.; Matthiesen, David H.

    1997-01-01

    The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.

  18. Advanced characterization of carrier profiles in germanium using micro-machined contact probes

    DEFF Research Database (Denmark)

    Clarysse, T.; Konttinen, M.; Parmentier, B.

    2012-01-01

    of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering...... the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (~10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate......The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities...

  19. Doping dependence of self-diffusion in germanium and the charge states of vacancies

    DEFF Research Database (Denmark)

    Südkamp, T.; Bracht, H.; Impellizzeri, G.

    2013-01-01

    Self-diffusion in boron-doped germanium has been studied at temperatures between 526 and 749 °C with secondary ion mass spectrometry. Self-diffusion under acceptor doping is retarded compared to intrinsic conditions. This demonstrates the contribution of charged vacancies in self-diffusion. Taking...... into account the dominance of doubly negatively charged vacancies under donor doping, the doping dependence of self-diffusion is best described with an inverse level ordering for singly and doubly negatively charged vacancies for all doping conditions. The level ordering explains the dominance of doubly...... charged vacancies under donor doping and their decreasing contribution with increasing acceptor doping until neutral vacancies mediate self-diffusion...

  20. Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Crouse, Dustin; Simon, John; Schulte, Kevin L.; Young, David L.; Ptak, Aaron J.; Packard, Corinne E.

    2018-03-01

    Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorous concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.

  1. Effects of organogermanium compound 2-carboxyethyl germanium sesquioxide on cardiovascular function and motor activity in rats.

    Science.gov (United States)

    Ho, C C; Chern, Y F; Lin, M T

    1990-01-01

    In rats anesthetized with urethane, intraperitoneal administration of a water-soluble organogermanium compound 2-carboxyethyl germanium sesquioxide (Ge-132) produced a dose-related reduction in either the mean arterial pressure or the heart rate. Both hypotension and bradycardia responses induced by Ge-132 injection were significantly inhibited by pretreatment of the animals with either spinal transection or bilateral vagotomy. The data indicate that Ge-132 induces both hypotension and bradycardia by promoting an activation of the parasympathetic efferent mechanisms and an inhibition of the sympathetic efferent mechanisms. On the other hand, following intraperitoneal injection of Ge-132, increased grooming and head swaying (as shown by an enhancement in fine movements monitored by an electronic activity counter) were provoked. Furthermore, the amphet-amine-induced enhancement in fine movements was potentiated by pretreatment of the animals with Ge-132. Thus, it appears that Ge-132 acts through the catecholaminergic mechanisms in the brain to induce locomotor stimulation in rats.

  2. Inhibitory effects of Ge-132 (carboxyethyl germanium sesquioxide) derivatives on enkephalin-degrading enzymes.

    Science.gov (United States)

    Komuro, T; Kakimoto, N; Katayama, T; Hazato, T

    1986-10-01

    Twenty-eight species of carboxyethyl germanium sesquioxide (Ge-132) derivatives were examined for their inhibitory effects on enkephalin-degrading enzymes that were purified from monkey brain, the longitudinal muscle layer of bovine small intestine, and human cerebrospinal fluid (CSF). A series of the sulfurized Ge-132 derivatives showed strong inhibition of these purified enzymes. The most effective ones were Ge-014 and Ge-107, which showed IC50 values of 60 and 100 micrograms/ml, respectively, for dipeptidylcarboxypeptidase from the longitudinal muscle layer. They also exhibited inhibitory activity against aminopeptidase from human CSF, the IC50 values being 450 and 440 micrograms/ml, respectively. Furthermore, these compounds showed inhibition of dipeptidylaminopeptidase from monkey brain and the longitudinal muscle layer of bovine small intestine. These compounds are expected to have analgesic effects due to their inhibition of the degradation of endogenous opioid peptides.

  3. High k oxides on Germanium: High energy x-ray detector R&D

    Science.gov (United States)

    Rumaiz, Abdul; Carini, Gabriella; Siddons, Peter; Rehak, Pavel

    2010-03-01

    The higher density of Germanium (Ge) makes it an ideal candidate for high energy x-ray detectors. The higher mobility of carriers combined with a low effective mass in Ge as compared to Silicon has generated a lot of interest in Ge based devices for high speed devices. However the challenge associated with native oxide makes pixel isolation in a diode array very challenging. Furthermore suitable implants and activation of the implants with temperature constrain is also an issue. We have made a simple Ge diode with Boron and Phosphor as p and n implant. Low temperature grown high k oxide by direct metal sputtering and atomic layer deposition was used. Details of the Ge wafer processing and the effect of different interface layer on the capacitance-voltage characteristics will be discussed.

  4. High-purity germanium detection system for the in vivo measurement of americium and plutonium

    International Nuclear Information System (INIS)

    Tyree, W.H.; Falk, R.B.; Wood, C.B.; Liskey, R.W.

    1976-01-01

    A high-purity germanium (HPGe) array, photon-counting system has been developed for the Rocky Flats Plant Body-Counter Medical Facility. The newly improved system provides exceptional resolutions of low-energy X-ray and gamma-ray spectra associated with the in vivo deposition of plutonium and americium. Described are the operational parameters of the system and some qualitative results illustrating detector performance for the photon emissions produced from the decay of plutonium and americium between energy ranges from 10 to 100 kiloelectron volts. Since large amounts of data are easily generated with the system, data storage, analysis, and computer software developments continue to be an essential ingredient for processing spectral data obtained from the detectors. Absence of quantitative data is intentional. The primary concern of the study was to evaluate the effects of the various physical and electronic operational parameters before adding those related entirely to a human subject

  5. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

    Science.gov (United States)

    Davidović, D.; Ying, H.; Dark, J.; Wier, B. R.; Ge, L.; Lourenco, N. E.; Omprakash, A. P.; Mourigal, M.; Cressler, J. D.

    2017-08-01

    Quantum-transport measurements in advanced silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are presented and analyzed, including tunneling spectroscopy of discrete impurity levels localized within the transistor and the dependence on an applied magnetic field. The collector current at millikelvin temperatures is well accounted for by ideal electron tunneling throughout the entire base. The amplification principle at millikelvin temperatures is fundamentally quantum mechanical in nature: an increase in base voltage, requiring a moderate base current, creates an equal and opposite decrease in the tunneling barrier seen by the electrons in the emitter, thereby increasing the collector current significantly more than the base current, producing current gain. Highly scaled SiGe HBTs operate predictably at millikelvin temperatures, thus opening the possibility of viable SiGe millikelvin circuitry.

  6. Measurement of 238U muonic x-rays with a germanium detector setup

    Energy Technology Data Exchange (ETDEWEB)

    Esch, Ernst I [Los Alamos National Laboratory; Jason, Andrew [Los Alamos National Laboratory; Miyadera, Haruo [Los Alamos National Laboratory; Hoteling, Nathan J [Los Alamos National Laboratory; Heffner, Robert H [Los Alamos National Laboratory; Adelmann, Andreas [PAUL SCHERRER INSTITUT; Stocki, Trevor [HEALTH CANADA; Mitchell, Lee [NAVAL RESEARCH LAB

    2009-01-01

    In the field of nuclear non-proliferation muon interactions with materials are of great interest. This paper describes an experiment conducted at the Paul Scherrer Institut (PSI) in Switzerland where a muon beam is stopped in a uranium target. The muons produce characteristic muonic x-rays. Muons will penetrate shielding easily and the produced characteristic x-rays can be used for positive isotope identification. Furthermore, the x-rays for uranium isotopes lie in the energy range of 6-7 MeV, which allows them to have an almost optimal mean free path in heavy shielding such as lead or steel. A measurement was conducted at PSI to prove the feasibility of detecting muonic x-rays from a large sample of depleted uranium (several kilograms) with a germanium detector. In this paper, the experimental setup and analysis of the measurement itself is presented.

  7. Ligand isotopic exchange of tris(acetylacetonato)germanium(IV) perchlorate in organic solvents

    International Nuclear Information System (INIS)

    Nagasawa, Akira; Saito, Kazuo

    1978-01-01

    The ligand isotopic exchange between tris(acetylacetonato)germanium(IV) perchlorate and acetylacetone[ 14 C] has been studied in 1,1,2,2-tetrachloroethane (TCE), nitromethane (NM), and acetonitrile (AN), at 100 - 120 0 C. In these solvents, the rate formula was R = k[H 2 O][complex]; the concentrations of the complex, free ligand, and water in solution were in the ranges from 0.01 to 0.1 mol dm -3 . The activation enthalpies and entropies for the k's are 105, 98, and 90 kJ mol -1 ; and -25, -53, and -69 JK -1 mol -1 , in TCE, NM, and AN, respectively. Influence of acid and base concentrations, and deuterium isotope effect on the rate in AN suggest that the rate controlling step of the exchange is governed by the ease of the proton transfer between the leaving and the incoming acac - in an intermediate. (auth.)

  8. Photo-induced persistent inversion of germanium in a 200-nm-deep surface region.

    Science.gov (United States)

    Prokscha, T; Chow, K H; Stilp, E; Suter, A; Luetkens, H; Morenzoni, E; Nieuwenhuys, G J; Salman, Z; Scheuermann, R

    2013-01-01

    The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a persistent inversion from n- to p-type in a 200-nm-thick surface layer of a germanium wafer by illumination with white and blue light. We induce the inversion with a half-life of ~12 hours at a temperature of 220 K which disappears above 280 K. The photo-induced inversion is absent for a sample with a 20-nm-thick gold capping layer providing a Schottky barrier at the interface. This indicates that charge accumulation at the surface is essential to explain the observed inversion. The contactless change of carrier concentration is potentially interesting for device applications in opto-electronics where the gate electrode and gate oxide could be replaced by the semiconductor surface.

  9. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  10. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  11. Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

    Science.gov (United States)

    D'Costa, Vijay Richard; Yeo, Yee-Chia

    2015-02-01

    Spectroscopic ellipsometry with photon energy in the 0.045-0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 1019 cm-3 and 336 cm2V-1s-1, respectively, were obtained. A phosphorus diffusivity of ˜1.2 × 10-13 cm2/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.

  12. Imaging of gamma rays with the WINKLER high-resolution germanium spectrometer

    International Nuclear Information System (INIS)

    Fisher, T.R.; Hamilton, T.W.; Hawley, J.D.; Kilner, J.R.; Murphy, M.J.; Nakano, G.H.

    1990-01-01

    The WINKLER spectrometer is a matrix of nine high-purity n-type germanium detectors developed for astrophysical observations and terrestrial radiation monitoring. The spectrometer has been fitted with a set of modulation collimator grids designed for imaging hard x-ray and gamma-ray sources by the Mertz, Nakano, and Kilner method. This technique employs a pair of gridded collimators in front of each detector with the number of grid bars varying from one to N, where N is the number of detectors. When the collimator pairs are rotated through a full 360-degree angular range, the detector signals provide the information for a two-dimensional band-limited Fourier reconstruction of order N. Tests of the spectrometer with single and multiple point sources as well as continuous source distributions are reported

  13. Feasibility study for use of a germanium detector in the LOFT gamma-ray densitometer

    International Nuclear Information System (INIS)

    Swierkowski, S.P.

    1976-01-01

    The primary aim of this study is to predict the performance of a gamma-ray densitometer system using computer modeling techniques. The system consists of a collimated 137 Cs source, a pipe containing a variable amount of water absorber, and a shielded and collimated germanium detector system. The gamma-ray energy spectrum (number of photon counts as a function of energy) has been computed for several sources at the detector. The response for combined sourceconfigurations has been obtained by linear superposition. The signal essentially consists of the counts in an energy window centered on the 137 Cs source at 662 keV that originate from this source. The noise is the background counts in the signal energy window that originate from 16 N scatter radiation and direct and shield tank activation gammas. The detector signal has been computed for 0, 50, and 100 percent water in the pipe

  14. Determination of Hot-Carrier Distribution Functions in Uniaxially Stressed p-Type Germanium

    DEFF Research Database (Denmark)

    Christensen, Ove

    1973-01-01

    This paper gives a description of an experimental determination of distribution functions in k→ space of hot holes in uniaxially compressed germanium. The hot-carrier studies were made at 85°K at fields up to 1000 V/cm and uniaxial stresses up to 11 800 kg/cm2. The field and stress were always...... in the 〈111〉 direction. For the highest stresses, the maximum fields were close to the threshold for current oscillations. The distribution functions were obtained from experimental modulation of intervalence-band absorption of infrared radiation. In order to interpret the results, a parametrized distribution...... function has been assumed. The parameters of the distribution function are then fitted to the experimental modulation. The calculation of absorption was performed numerically, using a four-band k→·p→ model. This model was checked for consistency by comparing with piezoabsorption measurements performed...

  15. The isotope composition of inorganic germanium in seawater and deep sea sponges

    Science.gov (United States)

    Guillermic, Maxence; Lalonde, Stefan V.; Hendry, Katharine R.; Rouxel, Olivier J.

    2017-09-01

    Although dissolved concentrations of germanium (Ge) and silicon (Si) in modern seawater are tightly correlated, uncertainties still exist in the modern marine Ge cycle. Germanium stable isotope systematics in marine systems should provide additional constraints on marine Ge sources and sinks, however the low concentration of Ge in seawater presents an analytical challenge for isotopic measurement. Here, we present a new method of pre-concentration of inorganic Ge from seawater which was applied to measure three Ge isotope profiles in the Southern Ocean and deep seawater from the Atlantic and Pacific Oceans. Germanium isotopic measurements were performed on Ge amounts as low as 2.6 ng using a double-spike approach and a hydride generation system coupled to a MC-ICP-MS. Germanium was co-precipitated with iron hydroxide and then purified through anion-exchange chromatography. Results for the deep (i.e. >1000 m depth) Pacific Ocean off Hawaii (nearby Loihi Seamount) and the deep Atlantic off Bermuda (BATS station) showed nearly identical δ74/70Ge values at 3.19 ± 0.31‰ (2SD, n = 9) and 2.93 ± 0.10‰ (2SD, n = 2), respectively. Vertical distributions of Ge concentration and isotope composition in the deep Southern Ocean for water depth > 1300 m yielded an average δ74/70Ge = 3.13 ± 0.25‰ (2SD, n = 14) and Ge/Si = 0.80 ± 0.09 μmol/mol (2SD, n = 12). Significant variations in δ74/70Ge, from 2.62 to 3.71‰, were measured in the first 1000 m in one station of the Southern Ocean near Sars Seamount in the Drake Passage, with the heaviest values measured in surface waters. Isotope fractionation by diatoms during opal biomineralization may explain the enrichment in heavy isotopes for both Ge and Si in surface seawater. However, examination of both oceanographic parameters and δ74/70Ge values suggest also that water mass mixing and potential contribution of shelf-derived Ge also could contribute to the variations. Combining these results with new Ge isotope data

  16. Chronic tubulointerstitial changes induced by germanium dioxide in comparison with carboxyethylgermanium sesquioxide.

    Science.gov (United States)

    Sanai, T; Okuda, S; Onoyama, K; Oochi, N; Takaichi, S; Mizuhira, V; Fujishima, M

    1991-11-01

    Chronic nephrotoxicity was investigated in rats orally administered germanium dioxide (GeO2) and carboxyethylgermanium sesquioxide (Ge-132) for 24 weeks. Increased BUN and serum phosphate as well as decreased creatinine clearance, weight loss, anemia and liver dysfunction were apparent at week 24 only in the GeO2 treated group. Vacuolar degeneration and granular depositions were observed by light microscope in the degenerated renal distal tubules in the rats of this group, with the semiquantitative scores of tubular degeneration being 95 +/- 9% in the GeO2 group, 3 +/- 1% in the Ge-132 group and 1 +/- 1% in the control group, respectively. Electron microscopy revealed electron-dense inclusions in the swollen mitochondrial matrix of the distal tubular epithelium in the GeO2 group. Although systemic toxicities were reduced after GeO2 was discontinued at week 24, renal tubulointerstitial fibrosis became prominent even at week 40 (16 weeks after discontinuation). A Ge.K alpha X-ray spectrum was clearly demonstrated in the mitochondrial matrix of the distal tubular epithelium in the GeO2 group with the help of electron probe X-ray microanalysis. On the other hand, neither toxic effects nor renal histological abnormalities were manifested in either the Ge-132 or the control group. The renal tissue content of germanium was high at weeks 24 and 40 in the GeO2 group. From these results, it is concluded that GeO2 causes characteristic nephropathy while Ge-132 does not. In addition, it appears that residual GeO2 remains for a considerably long time even after the cessation of GeO2 intake.

  17. Germanium-silicon alloy and core-shell nanocrystals by gas phase synthesis.

    Science.gov (United States)

    Mehringer, Christian; Kloner, Christian; Butz, Benjamin; Winter, Benjamin; Spiecker, Erdmann; Peukert, Wolfgang

    2015-03-12

    In this work we present a novel route to synthesize well defined germanium-silicon alloy (GexSi1-x) and core-shell nanocrystals (NCs) employing monosilane (SiH4) and monogermane (GeH4) as precursors in a continuously operated two-stage hot-wall aerosol reactor setup. The first hot-wall reactor stage (HWR I) is used to produce silicon (Si) seed particles from SiH4 pyrolysis in Argon (Ar). The resulting seeding aerosol is fed into the second reactor stage (HWR II) and a mixture of SiH4 and GeH4 is added. The ratio of the precursors in the feed, their partial pressures, the synthesis temperature in HWR II and the overall pressure are varied depending on the desired morphology and composition. Alloy particle production is achieved in the heterogeneous surface reaction regime, meaning that germanium (Ge) and Si are deposited on the seed surface simultaneously. The NCs can be synthesized with any desired composition, whilst maintaining a mean diameter around 30 nm with a geometric standard deviation (GSD) around 1.25. The absorption behavior and the related fundamental optical band gap energy in dependence on the alloy composition are exemplarily presented. They prove the possibility to tailor NC properties for electronical and opto-electronical applications. In the homogeneous gas phase reaction regime facetted Ge-Si core-shell structures are accessible. The Ge deposition on the seeds precedes the Si deposition due to different gas phase reaction kinetics of the precursors. The Si layer grows epitaxially on the Ge core and is around 5 nm thick.

  18. Solution-grown crystals for neutron radiation detectors, and methods of solution growth

    Science.gov (United States)

    Zaitseva, Natalia P; Hull, Giulia; Cherepy, Nerine J; Payne, Stephen A; Stoeffl, Wolfgang

    2012-06-26

    A method according to one embodiment includes growing an organic crystal from solution, the organic crystal exhibiting a signal response signature for neutrons from a radioactive source. A system according to one embodiment includes an organic crystal having physical characteristics of formation from solution, the organic crystal exhibiting a signal response signature for neutrons from a radioactive source; and a photodetector for detecting the signal response of the organic crystal. A method according to another embodiment includes growing an organic crystal from solution, the organic crystal being large enough to exhibit a detectable signal response signature for neutrons from a radioactive source. An organic crystal according to another embodiment includes an organic crystal having physical characteristics of formation from solution, the organic crystal exhibiting a signal response signature for neutrons from a radioactive source, wherein the organic crystal has a length of greater than about 1 mm in one dimension.

  19. Extra dimensions in space and time

    CERN Document Server

    Bars, Itzhak

    2010-01-01

    Covers topics such as Einstein and the Fourth Dimension; Waves in a Fifth Dimension; and String Theory and Branes Experimental Tests of Extra Dimensions. This book offers a discussion on Two-Time Physics

  20. Higuchi dimension of digital images.

    Directory of Open Access Journals (Sweden)

    Helmut Ahammer

    Full Text Available There exist several methods for calculating the fractal dimension of objects represented as 2D digital images. For example, Box counting, Minkowski dilation or Fourier analysis can be employed. However, there appear to be some limitations. It is not possible to calculate only the fractal dimension of an irregular region of interest in an image or to perform the calculations in a particular direction along a line on an arbitrary angle through the image. The calculations must be made for the whole image. In this paper, a new method to overcome these limitations is proposed. 2D images are appropriately prepared in order to apply 1D signal analyses, originally developed to investigate nonlinear time series. The Higuchi dimension of these 1D signals is calculated using Higuchi's algorithm, and it is shown that both regions of interests and directional dependencies can be evaluated independently of the whole picture. A thorough validation of the proposed technique and a comparison of the new method to the Fourier dimension, a common two dimensional method for digital images, are given. The main result is that Higuchi's algorithm allows a direction dependent as well as direction independent analysis. Actual values for the fractal dimensions are reliable and an effective treatment of regions of interests is possible. Moreover, the proposed method is not restricted to Higuchi's algorithm, as any 1D method of analysis, can be applied.

  1. Crystallization of Chicken Egg-White Lysozyme from Ammonium Sulfate

    Science.gov (United States)

    Forsythe, Elizabeth L.; Snell, Edward H.; Pusey, Marc L.

    1997-01-01

    Chicken egg-white lysozyme was crystallized from ammonium sulfate over the pH range 4.0-7.8, with protein concentrations from 100 to 150 mg/ml. Crystals were obtained by vapor-diffusion or batch-crystallization methods. The protein crystallized in two morphologies with an apparent morphology dependence on temperature and protein concentration. In general, tetragonal crystals could be grown by lowering the protein concentration or temperature. Increasing the temperature or protein concentration resulted in the growth of orthorhombic crystals. Representative crystals of each morphology were selected for X-ray analysis. The tetragonal crystals belonged to the P4(sub 3)2(sub 1)2 space group with crystals grown at ph 4.4 having unit-cell dimensions of a = b = 78.7 1, c=38.6 A and diffracting to beyond 2.0 A. The orthorhombic crystals, grown at pH 4.8, were of space group P2(sub 1)2(sub 1)2 and had unit-cell dimensions of a = 30.51, b = 56.51 and c = 73.62 A.

  2. Prospects for solar axion searches with crystals via Bragg scattering

    International Nuclear Information System (INIS)

    Irastorza, I. G.; Cebrian, S.; Garcia, E.; Gonzalez, D.; Morales, A.; Morales, J.; Ortiz de Solorzano, A.; Peruzzi, A.; Puimedon, J.; Sarsa, M. L.; Scopel, S.; Villar, J. A.

    2000-01-01

    A calculation of the expected signal due to Primakov coherent conversion of solar axions into photons via Bragg scattering in several solid-state detectors is presented and compared with present and future experimental sensitivities. The axion window m a > or approx. 0.03 eV (not accessible at present by other techniques) could be explored in the foreseeable future with crystal detectors to constrain the axion-photon coupling constant g aγγ below the latest bounds coming from helioseismology. On the contrary a positive signal in the sensitivity region of such devices would imply revisiting other more stringent astrophysical limits derived for the same range of the axion mass. The application of this technique to the COSME germanium detector which is taking data at the Canfranc Underground Laboratory leads to a 95% C.L. limit g aγγ ≤ 2.8 x 10 -9 GeV -1

  3. The Existential Dimension of Right

    DEFF Research Database (Denmark)

    Hartz, Emily

    2017-01-01

    The following article paves out the theoretical ground for a phenomenological discussion of the existential dimension of right. This refers to a dimension of right that is not captured in standard treatments of right, namely the question of whether – or how the concept of rights relates...... for discussing the existential dimension of right by bringing central parts of Fichte’s and Arendt’s work into dialogue. By facilitating this – admittedly unusual – dialogue between Fichte and Arendt the author explicates how, for both Fichte and Arendt, the concept of right can only be adequately understood...... as referring to the existential condition of plurality and uses this insight to draw up a theoretical ground for further phenomenological analysis of right....

  4. Neutrino oscillations in deconstructed dimensions

    International Nuclear Information System (INIS)

    Haellgren, Tomas; Ohlsson, Tommy; Seidl, Gerhart

    2005-01-01

    We present a model for neutrino oscillations in the presence of a deconstructed non-gravitational large extra dimension compactified on the boundary of a two-dimensional disk. In the deconstructed phase, sub-mm lattice spacings are generated from the hierarchy of energy scales between ∼ 1 TeV and the usual B-L breaking scale ∼ 10 15 GeV. Here, short-distance cutoffs down to ∼ 1 eV are motivated by the strong coupling behavior of gravity in local discrete extra dimensions. This could make it possible to probe the discretization of extra dimensions and non-trivial field configurations in theory spaces which have only a few sites, i.e., for coarse latticizations. Thus, the model has relevance to present and future precision neutrino oscillation experiments. (author)

  5. Correlated Electrons in Reduced Dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Bonesteel, Nicholas E [Florida State Univ., Tallahassee, FL (United States)

    2015-01-31

    This report summarizes the work accomplished under the support of US DOE grant # DE-FG02-97ER45639, "Correlated Electrons in Reduced Dimensions." The underlying hypothesis of the research supported by this grant has been that studying the unique behavior of correlated electrons in reduced dimensions can lead to new ways of understanding how matter can order and how it can potentially be used. The systems under study have included i) fractional quantum Hall matter, which is realized when electrons are confined to two-dimensions and placed in a strong magnetic field at low temperature, ii) one-dimensional chains of spins and exotic quasiparticle excitations of topologically ordered matter, and iii) electrons confined in effectively ``zero-dimensional" semiconductor quantum dots.

  6. Effect of γ-radiation on crystallization of polycaprolactone

    International Nuclear Information System (INIS)

    Zhu Guangming; Xu, Qianyong; Qin Ruifeng; Yan Hongxia; Liang Guozheng

    2005-01-01

    The crystallization behavior of radiation cross-linked poly(ε-caprolactone) (PCL) was studied by DSC at different cooling rates. The crystallization process was analyzed by the Ozawa equation and the Mo-Zhishen method that is developed from combining the Avrami equation and the Ozawa equation. It was concluded that the crystallization of radiation crosslinked PCL is governed by heterogeneous nucleation and single-dimension growth; the crystal fraction and rates of crystallization are related to the radiation dose and degree of cross-linking; the relationship between relative crystallinity and time follows the Ozawa equation: The higher the degree of crosslinking, the less the crystal velocity constant. The activation energy of crystallization for irradiated PCL is between 65 and 54kJ/mol

  7. Photonic time crystals.

    Science.gov (United States)

    Zeng, Lunwu; Xu, Jin; Wang, Chengen; Zhang, Jianhua; Zhao, Yuting; Zeng, Jing; Song, Runxia

    2017-12-07

    When space (time) translation symmetry is spontaneously broken, the space crystal (time crystal) forms; when permittivity and permeability periodically vary with space (time), the photonic crystal (photonic time crystal) forms. We proposed the concept of photonic time crystal and rewritten the Maxwell's equations. Utilizing Finite Difference Time Domain (FDTD) method, we simulated electromagnetic wave propagation in photonic time crystal and photonic space-time crystal, the simulation results show that more intensive scatter fields can obtained in photonic time crystal and photonic space-time crystal.

  8. The Creative Dimension of Visuality

    DEFF Research Database (Denmark)

    Michelsen, Anders Ib

    2013-01-01

    analysis relying on language/linguistics as a model for explaining culture? More specifically, how can the – creative – novelty of visual culture be addressed by a notion of discourse? This essay will argue that the debate on visual culture is lacking with regard to discerning the creative dimension of its...... own appearance. It will indicate an alternative conceptual framework based on Johann P. Arnason’s draft of tripartite culturalization which focuses on a shift from essences to dimensions of culture. This will be further developed by relating Maurice Merleau-Ponty’s idea of ‘chiasm’ of ‘the visible...

  9. The Ethical Dimension of Innovation

    DEFF Research Database (Denmark)

    Nogueira, Leticia Antunes; Nogueira, Tadeu Fernando

    2014-01-01

    The view of innovation as a positive concept has been deeply rooted in business and academic cultures ever since Schumpeter coined the concept of creative destruction. Even though there is a large body of literature on innovation studies, limited attention has been given to its ethical dimension....... In this chapter, the ethical implications of innovations are illustrated with a case study of “destructive creation” in the food industry, and upon which an argumentative analysis is conducted. The main message of this chapter is that innovations have inherent ethical dimensions and that quality innovations...

  10. From nanometer aggregates to micrometer crystals

    DEFF Research Database (Denmark)

    Schultz, Logan Nicholas; Dideriksen, Knud; Lakshtanov, Leonid

    2014-01-01

    and crystal shapes. Grain coarsening of calcite, CaCO3, is relevant for biomineralization and commercial products and is an important process in diagenesis of sediments to rock during geological time. We investigated coarsening of pure, synthetic calcite powder of sub-micrometer diameter crystals and aged......Grain size increases when crystals respond to dynamic equilibrium in a saturated solution. The pathway to coarsening is generally thought to be driven by Ostwald ripening, that is, simultaneous dissolution and reprecipitation, but models to describe Ostwald ripening neglect solid-solid interactions...... demonstrated steady growth of nanometer crystallites. The results can be described by theory where grains coarsen preferentially by aggregation at early times and high temperatures and by Ostwald ripening at later stages. Crystal form and dimension are influenced by the transition from one growth mechanism...

  11. Proton and light ion deflection at medium energies with planar bent crystals

    Science.gov (United States)

    Ray, C.; Dauvergne, D.

    2017-07-01

    The transmission of protons in planar channeling or in the regime of crystal reflection in bent crystals is now routinely used at high energy. We used the property that channeling critical angle increases as the incident particle momentum decreases, to explore the region of moderate energies (100 MeV-1 GeV). Indeed, such energies are particularly interesting since medical applications such as particle therapy have to face the constraints of being compatible with hospital-based accelerators. Therefore, replacing tens- or even hundreds-tons gantries by bent crystals would - if feasible - meet societal applications. We used binary-encounter simulations of trajectories inside crystals oriented along planar directions. The Molière potential with thermally vibrating lattice atoms was used, and additional transverse heating was introduced to account for multiple elastic scattering by close-collisions on electrons, which depends on the transverse energy of the channeled ions. The survival yield (i.e. the fraction of ions keeping trajectories within plus-minus one critical planar channeling angle with respect to lattice planes) was simulated for protons and carbon ions, as a function of crystal nature (silicon or germanium), crystal temperature, thickness and curvature. Although the transmitted yields are far from the necessary yields required to treat patients, significant survival yields were found through cm-thick crystals at angles beyond 10°. We will discuss possible experimental verification of these findings, and in particular practical aspects of such very large bending angles.

  12. Quantitative spectrographic determination of traces of germanium in lignite; Determinacion Espectrografica Cuantitativa de trazas de Germanio en Lignitos

    Energy Technology Data Exchange (ETDEWEB)

    Martin, M.; Roca, M.

    1972-07-01

    A burning technique in a d.c. arc at 10 amp has been employed. The standards have been prepared from a natural lignite with a low germanium content. In order to enhance sensitivity, AgCl, K{sub 2}SO{sub 4}, CuF{sub 2}, Sb{sub 2}S{sub 3} and Bi{sub 2}S{sub 3} have been tested as sweeping materials. Using 2% CuF{sub 2} a detection limit of 1 ppm germanium is attainable. Bi, Cu, Sb and Sn have been studied as internal standards: the former leads to the, highest precision (1 6%). Results show good agreement with those obtained by the addition method. (Author) 6 refs.

  13. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    KAUST Repository

    Almuslem, A. S.

    2017-02-14

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  14. US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

    International Nuclear Information System (INIS)

    Dreyer, J.; Burks, M.; Ham, Y.; Kwak, S.

    2015-01-01

    This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results from PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.

  15. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    Science.gov (United States)

    Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

    2017-02-01

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  16. Ultratough CVD single crystal diamond and three dimensional growth thereof

    Science.gov (United States)

    Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  17. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  18. UV Laser Co-Photolytic Approach to Gas-Phase Formation and Deposition of Nano-Sized Germanium Sulfides.

    Czech Academy of Sciences Publication Activity Database

    Tomovska, R.; Vorlíček, Vladimír; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2006-01-01

    Roč. 182, 1 (2006) , s. 107-111 ISSN 0022-3573 R&D Projects: GA MŠk(CZ) ME 486 Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z10100523; CEZ:AV0Z40320502 Keywords : laser deposition * germanium sulfides * nanomaterials Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 1.533, year: 2006

  19. Sensitivity of LDEF foil analyses using ultra-low background germanium vs. large NaI(Tl) multidimensional spectrometers

    International Nuclear Information System (INIS)

    Reeves, J.H.; Arthur, R.J.; Brodzinski, R.L.

    1992-06-01

    Cobalt foils and stainless steel samples were analyzed for induced 6O Co activity with both an ultra-low background germanium gamma-ray spectrometer and with a large NaI(Tl) multidimensional spectrometer, both of which use electronic anticoincidence shielding to reduce background counts resulting from cosmic rays. Aluminum samples were analyzed for 22 Na. The results, in addition to the relative sensitivities and precisions afforded by the two methods, are presented

  20. String theory in four dimensions

    CERN Document Server

    1988-01-01

    ``String Theory in Four Dimensions'' contains a representative collection of papers dealing with various aspects of string phenomenology, including compactifications on smooth manifolds and more general conformal field theories. Together with the lucid introduction by M. Dine, this material gives the reader a good working knowledge of our present ideas for connecting string theory to nature.

  1. Serre dimension of monoid algebras

    Indian Academy of Sciences (India)

    MANOJ K KESHARI

    Department of Mathematics, Indian Institute of Technology Bombay,. Powai, Mumbai 400 076, India. *Corresponding author. E-mail: keshari@math.iitb.ac.in; mathparvez@gmail.com. MS received 7 July 2015; revised 20 October 2015. Abstract. Let R be a commutative Noetherian ring of dimension d, M a commutative.

  2. Collective dimensions in animal ethics

    NARCIS (Netherlands)

    Bovenkerk, B.; Verweij, M.F.

    2015-01-01

    Due to its emphasis on experiential interests, animal ethics tends to focus on individuals as the sole unit of moral concern. Many issues in animal ethics can be fruitfully analysed in terms of obligations towards individual animals, but some problems require reflection about collective dimensions

  3. Correlation Dimension Estimation for Classification

    Czech Academy of Sciences Publication Activity Database

    Jiřina, Marcel; Jiřina jr., M.

    2006-01-01

    Roč. 1, č. 3 (2006), s. 547-557 ISSN 1895-8648 R&D Projects: GA MŠk(CZ) 1M0567 Institutional research plan: CEZ:AV0Z10300504 Keywords : correlation dimension * probability density estimation * classification * UCI MLR Subject RIV: BA - General Mathematics

  4. Teachers' Careers: The Objective Dimension.

    Science.gov (United States)

    Evetts, Julia

    1986-01-01

    Analyzes the objective dimension of teachers' careers showing how 530 British male/female teachers are distributed throughout the pay scale and promotions making up the formal structure of teaching. Indicates length of experience is the rewarding but not the sole factor in bureaucratic structure and differential male/female career achievements.…

  5. Physics with large extra dimensions

    Indian Academy of Sciences (India)

    The recent understanding of string theory opens the possibility that the string scale can be as low as a few TeV. The apparent weakness of gravitational interactions can then be accounted by the existence of large internal dimensions, in the sub-millimeter region. Furthermore, our world must be confined to live on a brane ...

  6. Quantum Gravity in Two Dimensions

    DEFF Research Database (Denmark)

    Ipsen, Asger Cronberg

    The topic of this thesis is quantum gravity in 1 + 1 dimensions. We will focus on two formalisms, namely Causal Dynamical Triangulations (CDT) and Dy- namical Triangulations (DT). Both theories regularize the gravity path integral as a sum over triangulations. The difference lies in the class...

  7. Dimension Reduction Regression in R

    Directory of Open Access Journals (Sweden)

    Sanford Weisberg

    2002-01-01

    Full Text Available Regression is the study of the dependence of a response variable y on a collection predictors p collected in x. In dimension reduction regression, we seek to find a few linear combinations β1x,...,βdx, such that all the information about the regression is contained in these linear combinations. If d is very small, perhaps one or two, then the regression problem can be summarized using simple graphics; for example, for d=1, the plot of y versus β1x contains all the regression information. When d=2, a 3D plot contains all the information. Several methods for estimating d and relevant functions of β1,..., βdhave been suggested in the literature. In this paper, we describe an R package for three important dimension reduction methods: sliced inverse regression or sir, sliced average variance estimates, or save, and principal Hessian directions, or phd. The package is very general and flexible, and can be easily extended to include other methods of dimension reduction. It includes tests and estimates of the dimension , estimates of the relevant information including β1,..., βd, and some useful graphical summaries as well.

  8. The Subjective Dimension of Nazism

    NARCIS (Netherlands)

    Föllmer, M.

    2013-01-01

    The present historiographical review discusses the subjective dimension of Nazism, an ideology and regime that needed translation into self-definitions, gender roles, and bodily practices to implant itself in German society and mobilize it for racial war. These studies include biographies of some of

  9. Massive Gravity in Three Dimensions

    NARCIS (Netherlands)

    Bergshoeff, Eric A.; Hohm, Olaf; Townsend, Paul K.

    2009-01-01

    A particular higher-derivative extension of the Einstein-Hilbert action in three spacetime dimensions is shown to be equivalent at the linearized level to the (unitary) Pauli-Fierz action for a massive spin-2 field. A more general model, which also includes "topologically-massive" gravity as a

  10. Physics with large extra dimensions

    Indian Academy of Sciences (India)

    Early motivation for large extra dimensions. Attempts to construct a consistent theory for ... of perturbative (heterotic) string theory that leads to the spectacular prediction of the possible existence of extra ... perturbation theory, leading to different powers of the string coupling gS in the corresponding effective action: SÁ = ∫.

  11. Dimensions of problem based learning

    DEFF Research Database (Denmark)

    Nielsen, Jørgen Lerche; Andreasen, Lars Birch

    2013-01-01

    The article contributes to the literature on problem based learning and problem-oriented project work, building on and reflecting the experiences of the authors through decades of work with problem-oriented project pedagogy. The article explores different dimensions of problem based learning such...

  12. Effective dimension in flocking mechanisms

    International Nuclear Information System (INIS)

    Baglietto, Gabriel; Albano, Ezequiel V.

    2011-01-01

    Even in its minimal representation (Vicsek Model, VM [T. Vicsek, A. Czirok, E. Ben-Jacob, I. Cohen and O. Shochet. Phys. Rev. Lett. 75, 1226 (1995).]), the widespread phenomenon of flocking raises intriguing questions to the statistical physicists. While the VM is very close to the better understood XY Model because they share many symmetry properties, a major difference arises by the fact that the former can sustain long-range order in two dimensions, while the latter can not. Aiming to contribute to the understanding of this feature, by means of extensive numerical simulations of the VM, we study the network structure of clusters showing that they can also sustain purely orientational, mean-field-like, long-range order. We identify the reason of this capability with the key concept of ''effective dimension.'' In fact, by analyzing the behavior of the average path length and the mean degree, we show that this dimension is very close to four, which coincides with the upper critical dimension of the XY Model, where orientational order is also of a mean-field nature. We expect that this methodology could be generalized to other types of dynamical systems.

  13. The Visuospatial Dimension of Writing

    Science.gov (United States)

    Olive, Thierry; Passerault, Jean-Michel

    2012-01-01

    The authors suggest that writing should be conceived of not only as a verbal activity but also as a visuospatial activity, in which writers process and construct visuospatial mental representations. After briefly describing research on visuospatial cognition, they look at how cognitive researchers have investigated the visuospatial dimension of…

  14. Interpretation and the Aesthetic Dimension

    Science.gov (United States)

    Mortensen, Charles O.

    1976-01-01

    The author, utilizing a synthesis of philosophic comments on aesthetics, provides a discourse on the aesthetic dimension and offers examples of how interpreters can nurture the innate sense of beauty in man. Poetic forms, such as haiku, are used to relate the aesthetic relationship between man and the environment. (BT)

  15. Correlation Dimension-Based Classifier

    Czech Academy of Sciences Publication Activity Database

    Jiřina, Marcel; Jiřina jr., M.

    2014-01-01

    Roč. 44, č. 12 (2014), s. 2253-2263 ISSN 2168-2267 R&D Projects: GA MŠk(CZ) LG12020 Institutional support: RVO:67985807 Keywords : classifier * multidimensional data * correlation dimension * scaling exponent * polynomial expansion Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 3.469, year: 2014

  16. Extra dimensions round the corner?

    International Nuclear Information System (INIS)

    Abel, S.

    1999-01-01

    How many dimensions are we living in? This question is fundamental and yet, astonishingly, it remains unresolved. Of course, on the everyday level it appears that we are living in four dimensions three space plus one time dimension. But in recent months theoretical physicists have discovered that collisions between high-energy particles at accelerators may reveal the presence of extra space-time dimensions. On scales where we can measure the acceleration of falling objects due to gravity or study the orbital motion of planets or satellites, the gravitational force seems to be described by a 1/r 2 law. The most sensitive direct tests of the gravitational law are based on torsion-balance experiments that were first performed by Henry Cavendish in 1798. However, the smallest scales on which this type of experiment can be performed are roughly 1 mm (see J C Long, H W Chan and J C Price 1999 Nucl. Phys. B 539 23). At smaller distances, objects could be gravitating in five or more dimensions that are rolled up or ''compactified'' - an idea that is bread-and-butter to string theorists. Most string theorists however believe that the gravitational effects of compact extra dimensions are too small to be observed. Now Nima Arkani-Hamed from the Stanford Linear Accelerator Center (SLAC) in the US, Savas Dimopoulos at Stanford University and Gia Dvali, who is now at New York University, suggest differently (Phys. Lett. B 1998 429 263). They advanced earlier ideas from string theory in which the strong, weak and electromagnetic forces are confined to membranes, like dirt particles trapped in soap bubbles, while the gravitational force operates in the entire higher-dimensional volume. In their theory extra dimensions should have observable effects inside particle colliders such as the Tevatron accelerator at Fermilab in the US or at the future Large Hadron Collider at CERN. The effect will show up as an excess of events in which a single jet of particles is produced with no

  17. Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Tengku Kamarul Bahri, T.N.H., E-mail: tnhidayah2@gmail.com [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru (Malaysia); Wagiran, H.; Hussin, R.; Saeed, M.A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru (Malaysia); Hossain, I. [Department of Physics, College of Science and Arts, King Abdul Aziz University, 21911 Rabigh (Saudi Arabia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, 81100 Johor Bahru (Malaysia)

    2014-10-01

    Highlights: •The TL properties of 29.9CaO–70B{sub 2}O{sub 3}: 0.1GeO{sub 2} glass has been investigated. •We exposed glass samples to 6 MV and 10 MV in a dose range of 0.5–4.0 Gy. •This glass has a potential material to be used for application in radiotherapy. -- Abstract: Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5–4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

  18. Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

    International Nuclear Information System (INIS)

    Tengku Kamarul Bahri, T.N.H.; Wagiran, H.; Hussin, R.; Saeed, M.A.; Hossain, I.; Ali, H.

    2014-01-01

    Highlights: •The TL properties of 29.9CaO–70B 2 O 3 : 0.1GeO 2 glass has been investigated. •We exposed glass samples to 6 MV and 10 MV in a dose range of 0.5–4.0 Gy. •This glass has a potential material to be used for application in radiotherapy. -- Abstract: Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5–4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy

  19. Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Zhu, Yan; Goley, Patrick S; Kundu, Souvik; Maurya, Deepam; Priya, Shashank

    2015-03-11

    SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germanium (Ge) exhibits a potential for a new class of nanoscale transistors. Germanium is attractive due to its superior transport properties while SrTiO3 (STO) is promising due to its high relative permittivity, both being critical parameters for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. The sharp heterointerface between STO and each crystallographically oriented Ge layer, studied by cross-sectional transmission electron microscopy, as well as band offset parameters at each heterojunction offers a significant advancement for designing a new generation of ferroelectric-germanium based multifunctional devices. Moreover, STO, when used as an interlayer between metal and n-type (4 × 10(18) cm(-3)) epitaxial Ge in metal-insulator-semiconductor (MIS) structures, showed a 1000 times increase in current density as well as a decrease in specific contact resistance. Furthermore, the inclusion of STO on n-Ge demonstrated the first experimental findings of the MIS behavior of STO on n-Ge.

  20. Growth of large detector crystals. CRADA final report

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, L.A. [Oak Ridge National Lab., TN (United States); Samuelson, S. [Deltronic Crystal Industries, Dover, NJ (United States)

    1997-06-18

    In the course of a collaborative research effort between L.A. Boatner of Oak Ridge National Laboratory and Prof. Alex Lempicki of the Department of Chemistry of Boston University, a new highly efficient and very fast scintillator for the detection of gamma-rays was discovered. This new scintillator consists of a single crystal of lutetium orthophosphate (LuPO{sub 4}) to which a small percentage of trivalent cerium is added as an activator ion. The new lutetium orthophosphate-cerium scintillator was found to be superior in performance to bismuth germanium oxide--a material that is currently widely used as a gamma-ray detector in a variety of medical, scientific, and technical applications. Single crystals of LuPO{sub 4} and related rare-earth orthophosphates had been grown for a number of years in the ORNL Solid State Division prior to the discovery of the efficient gamma-ray-scintillation response of LuPO{sub 4}:Ce. The high-temperature-solvent (flux-growth) method used for the growth of these crystals was capable of producing crystals in sizes that were adequate for research purposes but that were inadequate for commercial-scale production and widespread application. The CRADA between ORNL and Deltronic Crystal Industries of Dover, NJ was undertaken for the purpose of investigating alternate approaches, such as top-seeded-solution growth, to the growth of LuPO{sub 4}:Ce scintillator crystals in sizes significantly larger than those obtainable through the application of standard flux-growth methods and, therefore, suitable for commercial sales and applications.