WorldWideScience

Sample records for ge single crystals

  1. Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR

    Institute of Scientific and Technical Information of China (English)

    JIANG Zhongwei; ZHANG Weilian; NIU Xinhuan

    2005-01-01

    SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spectroscopy at room temperature (RT) and 10 K. A new peak appears at the wave number of 710 cm-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum (BWHM) W1/2 of the 710 cm-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.

  2. Diamond turning of Si and Ge single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  3. The sublimation kinetics of GeSe single crystals

    Science.gov (United States)

    Irene, E. A.; Wiedemeier, H.

    1975-01-01

    The sublimation kinetics of (001) oriented GeSe single crystal platelets was studied by high-temperature mass spectroscopy, quantitative vacuum microbalance techniques, and hot stage optical microscopy. For a mean experimental temperature of 563 K, the activation enthalpy and entropy are found to equal 32.3 kcal/mole and 19.1 eu, respectively. The vaporization coefficient is less than unity for the range of test temperatures, and decreases with increasing temperature. The combined experimental data are correlated by means of a multistep surface adsorption mechanism.

  4. Hard-photon emission from 150-GeV electrons incident on Si and Ge single crystals near axial directions

    Energy Technology Data Exchange (ETDEWEB)

    Medenwaldt, R.; Moller, S.P.; Sorensen, A.H.; Tang-Petersen, S.; Uggerhoj, E. (Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark (DK)); Elsener, K. (European Organization for Nuclear Research (CERN), CH-1211 Geneva 23, Switzerland (CH)); Hage-Ali, M.; Siffert, P.; Stoquert, J. (Centre de Recherches Nucleaires, F-67037 Strasbourg CEDEX, France (FR)); Maier, K. (The Max-Planck Institut fuer Metallforschung, D-7000 Stuttgart 80, Federal Republic of Germany (DE))

    1989-12-25

    The emission of high-energy photons from 150-GeV electrons traversing single crystals near axial directions is studied experimentally for Ge and, for the first time, also for Si. Enhancements relative to random up to 2 orders of magnitude are observed. For incident angles much less than the critical channeling angle {psi}{sub 1} a pronounced peak appears in the photon spectra near {similar to}85% of the electron energy for both the Si and the Ge crystals. The peak disappears for incident angles larger than {similar to}0.3{psi}{sub 1}. The experimental findings are compared to theoretical results.

  5. Piezoelectric properties of Sr3Ga2Ge4O14 single crystals

    Indian Academy of Sciences (India)

    Anhua Wu; Jiayue Xu; Juan Zhou; Hui Shen

    2007-04-01

    A new piezoelectric single crystal, Sr3Ga2Ge4O14 (SGG), has been grown successfully by the vertical Bridgman method with crucible-sealing technique. SGG crystal up to 2″ in diameter has been obtained. The relative dielectric constants, the piezoelectric strain constants, elastic compliance constants and electromechanical coupling factors have been determined with resonance and anti-resonance frequencies method by using the impedance analyzer (Agilent 4294A). The results show that the piezoelectric strain constants and electromechanical coupling factors of SGG single crystal are higher than those of LGS single crystals making it a potential substrate material for surface-acoustic wave applications.

  6. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  7. The new piezoelectric single crystal obtained by the Ge doping in the α-quartz structure

    Science.gov (United States)

    Miclau, M.; Grozescu, A.; Bucur, R.; Poienar, M.; Vlazan, P.; Grozescu, I.; Miclau, N.; Muscutariu, I.

    2009-03-01

    The most interesting properties of the quartz-like crystals are its piezoelectric properties, which are strongly influenced by the intrinsic structural distortions of the material and the crystal growth conditions. Thus, physical properties such as coupling coefficient, the αβ transition can be directly related to structural distortions in terms of the bridging angle. We propose a new way to increase the structural distortion, using Ge to dope the SiO2 structure with respect to α-quartz structure type. Growth of α -SixGe1-xO2 crystal was realized hydrothermally using a temperature gradient method. Single crystals were investigated by electron microprobe analysis, X-ray diffraction and atomic force microscopy. The results open the possibility to tune the piezoelectric properties of these materials by varying the chemical composition.

  8. Recent progress in the growth and characterization of large Ge single crystals for IR optics and microelectronics

    Science.gov (United States)

    Azoulay, Moshe; Gafni, Gabriella; Roth, Michael

    1991-11-01

    During recent years there has been an increasing demand for large homogeneous Ge single crystals to be used as optical components in high resolution thermal imaging systems. Thus, the authors' research focused on understanding the roles of dopant and stress distribution in large Ge crystals and their influence on the optical performance in the IR region, 8-12 micrometers . More recently, a new application for heavily dope, n-type Ge crystals with low resistivity (~0.1 Ω.cm) and high crystalline perfection (EPD ~5 X 103cm-2) has been reported. This paper presents the growth and characterization of large homogeneous Ge single crystals with diameters up to 240 mm for IR optics. Preliminary results on the growth of 75 mm diameter Ge single crystals for substrates preparation are given. These substrates can be used in GaAs solar cells for space applications.

  9. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents

    Indian Academy of Sciences (India)

    G K Solanki; Dipika B Patel; Sandip Unadkat; M K Agarwal

    2010-05-01

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

  10. Bulk single crystal growth of SiGe by PMCZ method

    Institute of Scientific and Technical Information of China (English)

    ZHANG Weilian; NIU Xinhuan; CHEN Hongjian; ZHANG Jianxin; SUN Junsheng; ZHANG Enhuai

    2003-01-01

    A new type of magnetic device was used to replace the conventional electro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanent magnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed at radial 360°. Using the ring permanent magnetic field, thermal convection in melt and centrifugal pumping flows due to crystal rotation could be strongly suppressed so that the fluctuations of temperature and micro-growth rate at solid/liquid interface could be restrained effectively. In the PMCZ condition, the growing environment of SiGe bulk single crystal was similar to the crystal growth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.) had been controlled by diffusion near the solid/liquid interface. Oxygen concentraion became lower and the distribution of composition became more homogeneous along longitudinal direction and across a radial section in the grown SiGe crystal. The mechanism of PMCZ superior to MCZ was also discussed.

  11. Anisotropic magnetic properties and superzone gap formation in CeGe single crystal.

    Science.gov (United States)

    Das, Pranab Kumar; Kumar, Neeraj; Kulkarni, R; Dhar, S K; Thamizhavel, A

    2012-04-11

    Single crystals of CeGe and its non-magnetic analog LaGe have been grown by the Czochralski method. The CeGe compound crystallizes in the orthorhombic FeB-type crystal structure with the space group Pnma (#62). The anisotropic magnetic properties have been investigated for well oriented single crystals by measuring the magnetic susceptibility, electrical resistivity and heat capacity. It has been found that CeGe orders antiferromagnetically at 10.5 K. Both transport and magnetic studies have revealed large anisotropy, reflecting the orthorhombic crystal structure. The magnetization data at 1.8 K reveal metamagnetic transitions along the [010] direction at 4.8 and 6.4 T and along the [100] direction at a critical field of 10.7 T, while the magnetization along the [001] direction increases linearly without any anomaly up to a field of 16 T. From the magnetic susceptibility and the magnetization measurements it has been found that the [010] direction is the easy axis of magnetization. The electrical resistivity along the three crystallographic directions exhibits an upturn at T(N), indicating superzone gap formation below T(N) in this compound. We have performed crystal electric field analysis on the magnetic susceptibility and the heat capacity data and found that the ground state is a doublet, and the energies of splitting from the ground state to the first and second excited doublet states were estimated to be 39 and 111 K, respectively.

  12. Structural features of Ge(Ga) single crystals grown by the floating zone method in microgravity

    Science.gov (United States)

    Prokhorov, I. A.; Zakharov, B. G.; Senchenkov, A. S.; Egorov, A. V.; Camel, D.; Tison, P.

    2008-11-01

    Structural features of the Ge(Ga) single crystal grown by the floating zone (FZ) method in microgravity environment aboard the FOTON-9 spacecraft are investigated by methods of X-ray topography, double-crystal diffractometry, selective chemical etching and spreading resistance measurements. It is established that the crystal structure is characterized by the presence of an incompletely melted region and defects caused by its formation. Growth striations revealed in regrown part of the crystal, testify to development of non-stationary capillary Marangoni convection in melt at the realized parameters of FZ remelting under space conditions. Periodicity of the growth striations is compared to frequency characteristics of heat flux pulsations through the crystallization front, found as a result of numerical simulation of melt hydrodynamics.

  13. Surface finishing of ZnGeP2 single crystal by diamond tool turning method

    Science.gov (United States)

    Yue, Xiaobin; Xu, Min; Du, Wenhao; Chu, Chong

    2017-09-01

    In this work, diamond tool turning of vertical gradient freeze (VGF) grown single crystal ZnGeP2 (ZGP) was investigated. The flatness of machined ZGP surface was measured with a Zygo interferometry to be less than λ/10 and the roughness was measured with a Taloy profilermeter to be 0.7-0.9 nm. The laser-induced damage threshold was measured with a 2.07 μm wavelength pulsed laser to be >3 J/cm2.

  14. Single-crystal study of highly anisotropic CeNiGe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Pikul, A P; Kaczorowski, D; Bukowski, Z; Plackowski, T; Gofryk, K [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO Box 1410, 50-950 Wroclaw (Poland)

    2004-09-01

    High quality single crystals of CeNiGe{sub 2} have been investigated by means of magnetic susceptibility, magnetization, electrical resistivity, magnetoresistivity and thermoelectric power measurements, carried out along all three principal crystallographic directions. The compound is an antiferromagnetic Kondo system that orders magnetically at T{sub N} = 3.9 K and undergoes a spin structure rearrangement at T{sub 1} = 3.2 K. The magnetic behaviour is strongly anisotropic with the easy magnetic direction parallel to the crystallographic a-axis. The Kondo temperature and the total crystal field splitting are of the order of 20 and 100 K, respectively.

  15. Antiferro- and ferromagnetic ordering in a PrGe single crystal.

    Science.gov (United States)

    Das, Pranab Kumar; Kumar, K Ramesh; Kulkarni, R; Dhar, S K; Thamizhavel, A

    2012-11-28

    An equiatomic PrGe single crystal was grown by the Czochralski pulling method. The grown single crystal was found to have CrB-type orthorhombic crystal structure with the space group Cmcm (no. 63). Transport and magnetization data reveal large anisotropy in the electrical resistivity, magnetic susceptibility and magnetization. PrGe was found to exhibit two consecutive magnetic orderings at 44 K and 41.5 K, respectively. The magnetic susceptibility measurement along the three principal directions in low applied fields revealed a cusp-like behaviour at 44 K while at 41.5 K a ferromagnetic-like increase was observed. The hysteretic behaviour in the magnetization measurement at 1.8 K confirmed the ferromagnetic nature of PrGe at low temperatures. The heat capacity data clearly revealed the bulk nature of two magnetic transitions by the presence of two sharp peaks attaining values exceeding 40 J K(-1) mol(-1) at the respective temperatures. The absence of a Schottky contribution in the magnetic part of the heat capacity indicates a quasi-ninefold degenerate J = 4 magnetic ground state in this system. The low temperature data of electrical resistivity and the magnetic part of the heat capacity show the existence of a gap in the spin-wave spectrum.

  16. Magnetic excitations in single crystals of Cu1-xNixGeO3

    DEFF Research Database (Denmark)

    Coad, S.; Petrenko, O.; Paul, D.M.;

    1997-01-01

    We have studied magnetic excitations in two single crystals of CuGeO3 doped with Ni2+, using inelastic neutron scattering at wave vectors close to the antiferromagnetic zone centre, Q=(0,1,1/2). Pure CuGeO3 is a one-dimensional compound with a spin-Peierls (S-P) gap of approximate to 1.95 meV. When...... Ni2+ is substituted for Cu2+ in CuGeO3, the 1D chains are broken into finite segments, suppressing the S-P phase and inducing a tow-temperature transition to coexistence with antiferromagnetic order. We show that for the 1.7% Ni-doped crystal the S-P gap is renormalised to approximate to 1.7 me......V, while approximate doubling of the dopant concentration to 3.2% results in an almost complete collapse of this excitation. Instead, measurements on the 3.2% Ni-doped crystal revealed a magnetic excitation that could be clearly resolved from the elastic magnetic peak. This excitation followed...

  17. Superlocalization and Formation of Grain Structure in Ni3ge Single Crystals with Different Orientations of Deformation Axes

    Science.gov (United States)

    Solov'eva, Yu. V.; Lipatnikova, Ya. D.; Starenchenko, S. V.; Solov'ev, A. N.; Starenchenko, V. A.

    2017-09-01

    The paper describes the influence of orientation of Ni3Ge single crystal deformation axes on the high-temperature superlocalization of plastic deformation. Mechanical properties of single crystals with different orientations are studied in this paper as well as the slip traces and the evolution of the dislocation structure. Based on these investigations, the observing conditions are described for the superlocalization bands and the formation of the grain structure in local areas of the original single crystal.

  18. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

    Directory of Open Access Journals (Sweden)

    Y. B. Sun

    2015-01-01

    Full Text Available We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.

  19. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Shah, V. A., E-mail: vishal.shah@warwick.ac.uk; Gammon, P. M. [Department of Engineering, The University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R. [Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Chávez-Ángel, E. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Department of Physics, UAB, 08193 Bellaterra (Barcelona) (Spain); Shchepetov, A.; Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); and others

    2014-04-14

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm{sup 2}. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

  20. Low-temperature properties of neutron irradiated CuGeO3 single crystals

    Science.gov (United States)

    Gladczuk, L.; Mosiniewicz-Szablewska, E.; Dabkowska, H.; Baran, M.; Pytel, B.; Szymczak, R.; Szymczak, H.

    2000-07-01

    The effect of neutron irradiation on the magnetic properties of CuGeO3 single crystal which shows the spin-Peierls transition below T sp=14 K was investigated by means of electron paramagnetic resonance (EPR) and susceptibility measurements. It was found that the irradiation led to a decrease of the spin-Peierls transition temperature and induced appreciable changes in the EPR signal intensity, resonance linewidth, g-factor and magnetic susceptibility of this material. These changes may be associated with a partial suppression of both the energy gap and the dimerization within the Cu chains.

  1. Molecular Field Calculation of Magnetization on NdRh2Ge2 Single Crystal

    Directory of Open Access Journals (Sweden)

    A. Himori

    2008-01-01

    Full Text Available Calculation of magnetization of the ternary single crystal compound NdRh2Ge2 has been carried out by using the wave-like molecular field model to explain the complex magnetic behavior. The field-induced magnetic structures having the propagation vectors, 2=(0,0,39/40, 3=(0,0,35/40, 4=(0,0,31/40, and 5=(0,0,0/40 (= the field-induced ferromagnetic phase were proposed. Calculation on the basis of these structures and the antiferromagnetic phase with 1=(0,0,1 well reproduces the experimental magnetization processes and - magnetic phase diagram.

  2. Multistep metamagnetism of NdRh{sub 2}Ge{sub 2}single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Himori, A [Graduate school of science and engineering, Yamaguchi University, Yamaguchi 753-8512 (Japan); Ohishi, S [Graduate school of science and engineering, Yamaguchi University, Yamaguchi 753-8512 (Japan); Koyama, K [Institute for Material Reserch, Tohoku University, Katahira 2-1-1, Sendai, 980-8577 (Japan); Watanabe, K [Institute for Material Reserch, Tohoku University, Katahira 2-1-1, Sendai, 980-8577 (Japan); Shigeoka, T [Graduate school of science and engineering, Yamaguchi University, Yamaguchi 753-8512 (Japan)

    2006-11-15

    Measurements of high-field magnetization up to 18 T, magnetic susceptibility and specific heat have been performed on a tetragonal NdRh{sub 2}Ge{sub 2} single crystal and polycrystalline sample. From the temperature dependences of magnetic susceptibilities, this compound shows an antiferromagnetic behaviour with Neel temperature of 50 K. Another magnetic transition is observed at 37 K. At low temperatures, a multi-step metamagnetic behaviour is observed along the easy c-axis and a strong magnetic anisotropy is seen. The saturation magnetic moment is estimated to be 2.76 {mu}{sub B}/f.u.. There are five magnetic phases below the induced ferromagnetic phase in the H-Tmagnetic phase diagram. To discuss the magnetic behaviours, the CEF analysis has been made.

  3. Temperature-dependent far-infrared properties of Bi_(12) GeO_(20) single crystal

    Institute of Scientific and Technical Information of China (English)

    Muhammad Kamran; Dai Yao-Min; Ma Ji-Yun; Li Bo-Hong; He Shi-Kun; Zhang Wei-Jun; Zheng Xiao-Rui; Qiu Xiang-Gang

    2009-01-01

    Far-infrared reflectivity spectra of bismuth germanium oxide(Bi_(12)GeO_(20))single crystals are measured from room temperature down to 10 K. All the reflectivity spectra are fitted to a complex dielectric function ε(w) in the factorised form. Phonon modes at low frequency are found to develop upon decreasing temperature and gain considerable spectrum weight below 150 K. The temperature dependent static dielectric constants are obtained from the Lyddane-Sachs-Teller relation based on the obtained oscillator parameters. The dielectric constants are found to increase upon decreasing temperature. which is attributed to the charge transfer among the ions in the unit cell with the temperature varying.

  4. Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    Zélia Soares Macedo

    2003-12-01

    Full Text Available Bi4Ge3O12 (bismuth germanate - BGO single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9 to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04 eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response.

  5. Anisotropic magnetic properties and crystal electric field studies on CePd2Ge2 single crystal.

    Science.gov (United States)

    Maurya, Arvind; Kulkarni, R; Dhar, S K; Thamizhavel, A

    2013-10-30

    The anisotropic magnetic properties of the antiferromagnetic compound CePd2Ge2, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by the Czochralski method. From the electrical transport, magnetization and heat capacity data, the Néel temperature is confirmed to be 5.1 K. Anisotropic behaviour of the magnetization and resistivity is observed along the two principal crystallographic directions-namely, [100] and [001]. The isothermal magnetization measured in the magnetically ordered state at 2 K exhibits a spin reorientation at 13.5 T for the field applied along the [100] direction, whereas the magnetization is linear along the [001] direction attaining a value of 0.94 μ(B)/Ce at 14 T. The reduced value of the magnetization is attributed to the crystalline electric field (CEF) effects. A sharp jump in the specific heat at the magnetic ordering temperature is observed. After subtracting the phononic contribution, the jump in the heat capacity amounts to 12.5 J K(-1)mol(-1) which is the expected value for a spin ½ system. From the CEF analysis of the magnetization data the excited crystal field split energy levels were estimated to be at 120 K and 230 K respectively, which quantitatively explains the observed Schottky anomaly in the heat capacity. A magnetic phase diagram has been constructed based on the field dependence of magnetic susceptibility and the heat capacity data.

  6. Superconductivity and physical properties of CaPd2Ge2 single crystals.

    Science.gov (United States)

    Anand, V K; Kim, H; Tanatar, M A; Prozorov, R; Johnston, D C

    2014-10-08

    We present the superconducting and normal state properties of CaPd(2)Ge(2) single crystals investigated by magnetic susceptibility χ, isothermal magnetization M, heat capacity Cp, in-plane electrical resistivity ρ and London penetration depth λ versus temperature T and magnetic field H measurements. Bulk superconductivity is inferred from the ρ(T) and Cp(T) data. The ρ(T) data exhibit metallic behavior and a superconducting transition with T(c onset) = 1.98 K and zero resistivity at T(c 0) = 1.67 K. The χ(T) reveals the onset of superconductivity at 2.0 K. For T > 2.0 K, the χ(T) and M(H) are weakly anisotropic paramagnetic with χ(ab) > χ(c). The Cp(T) data confirm the bulk superconductivity below T(c) = 1.69(3) K. The superconducting state electronic heat capacity is analyzed within the framework of a single-band α-model of BCS superconductivity and various normal and superconducting state parameters are estimated. Within the α-model, the Cp(T) data and the ab plane λ(T) data consistently indicate a moderately anisotropic s-wave gap with Δ(0)/k(B)T(c) ≈ 1.6, somewhat smaller than the BCS value of 1.764. The relationship of the heat capacity jump at Tc and the penetration depth measurement to the anisotropy in the s-wave gap is discussed.

  7. Magnetic study on single crystals of YMn{sub 6}Ge{sub 6} and LuMn{sub 6}Ge{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, M. [KYOKUGEN, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Narumi, Y. [KYOKUGEN, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoshii, S. [KYOKUGEN, Osaka University, Toyonaka, Osaka 560-8531 (Japan)]. E-mail: yoshii@mag.rcem.osaka-u.ac.jp; Kindo, K. [KYOKUGEN, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Zhang, L. [Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, 1018 XE Amsterdam (Netherlands); Brueck, E. [Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, 1018 XE Amsterdam (Netherlands); Buschow, K.H.J. [Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, 1018 XE Amsterdam (Netherlands); Boer, F.R. de [KYOKUGEN, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, 1018 XE Amsterdam (Netherlands); Lefevre, C. [Lab. Chim. Sol. Mineral, Universite Henri Poincare-Nancy 1, 54506 Vandoeuvre les Nancy Cedex (France); Venturini, G. [Lab. Chim. Sol. Mineral, Universite Henri Poincare-Nancy 1, 54506 Vandoeuvre les Nancy Cedex (France)

    2006-02-09

    The magnetic properties of single crystals of the HfFe{sub 6}Ge{sub 6}-type compounds YMn{sub 6}Ge{sub 6} and LuMn{sub 6}Ge{sub 6} obtained in an In flux have been investigated by thermomagnetic measurements and by a high-field magnetization study. Both the compounds display Neel point at T {sub N} = 482 and 527 K, respectively. The compound YMn{sub 6}Ge{sub 6} saturates at M {sub s} = 12 {mu}{sub B}/f.u. above 33 T, whereas LuMn{sub 6}Ge{sub 6} is still not saturated in the largest applied field (M(50 T) = 9 {mu}{sub B}/f.u.), thus indicating different strengths of the antiferromagnetic interactions. The magnetization curves of YMn{sub 6}Ge{sub 6} and LuMn{sub 6}Ge{sub 6} recorded with the field applied along the c-axis display a field-induced transition at relatively low field (around 10 and 15 T, respectively), which should be related to spin reorientation process. In larger applied fields, all magnetization loops display two field-induced transitions with pronounced hysteretic behaviour which may be related to the successive stabilization of helical and fan structures.

  8. Measurements of Pair Production Under Channelling Conditions by 70-180 GeV Photons Incident on Single Crystals

    CERN Multimedia

    2002-01-01

    This experiment will use the WA69 set-up to deliver a tagged photon beam in the energy range from 15~GeV to 150~GeV with a total angular spread of about @M~0.5~mrad. The incident photon direction is known to about 35~@mrad through the direction of the emitting electron. The photon beam is incident on an about 1~mm thick Ge single crystal in order to investigate pair production in single crystals. Above a certain energy threshold photons incident along crystal axis will show strongly increased pair production yi - the so-called .us Channelling Pair Production (ChPP). The produced pairs are analyzed in the @W-spectrometer. The large spread in incident photon angles offers an excellent opportunity to investigate in one single experiment the pair production in an angular region around a crystal axes and thereby compare ChPP with coherent (CPP) and incoherent (ICPP) processes. The very abrupt onset of ChPP (around threshold) will be measured and give a crucial test of the theoretical calculations. The differential...

  9. Unusual 5f magnetism in the U2Fe3Ge ternary Laves phase: a single crystal study.

    Science.gov (United States)

    Henriques, M S; Gorbunov, D I; Waerenborgh, J C; Havela, L; Shick, A B; Diviš, M; Andreev, A V; Gonçalves, A P

    2013-02-13

    Magnetic properties of the intermetallic compound U(2)Fe(3)Ge were studied on a single crystal. The compound crystallizes in the hexagonal Mg(2)Cu(3)Si structure, an ordered variant of the MgZn(2) Laves structure (C14). U(2)Fe(3)Ge displays ferromagnetic order below the Curie temperature T(C) = 55 K and presents an exception to the Hill rule, as the nearest inter-uranium distances do not exceed 3.2 Å. Magnetic moments lie in the basal plane of the hexagonal lattice, with the spontaneous magnetic moment M(s) = 1.0 μ(B)/f.u. at T = 2 K. No anisotropy within the basal plane is detected. In contrast to typical U-based intermetallics, U(2)Fe(3)Ge exhibits very low magnetic anisotropy, whose field does not exceed 10 T. The dominance of U in the magnetism of U(2)Fe(3)Ge is suggested by the (57)Fe Mössbauer spectroscopy study, which indicates very low or even zero Fe moments. Electronic structure calculations are in agreement with the observed easy-plane anisotropy but fail to explain the lack of an Fe contribution to the magnetism of U(2)Fe(3)Ge.

  10. Femtosecond laser crystallization of amorphous Ge

    Science.gov (United States)

    Salihoglu, Omer; Kürüm, Ulaş; Yaglioglu, H. Gul; Elmali, Ayhan; Aydinli, Atilla

    2011-06-01

    Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm-1 as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.

  11. Optical and X-ray photoelectron spectroscopy of PbGeO3 and Pb5Ge3O11 single crystals

    Indian Academy of Sciences (India)

    S C Sabharwal; S N Jha; Sangeeta

    2010-08-01

    Pb5Ge3O11 crystals are found to exhibit pale yellow colouration while PbGeO3 are colourless. X-ray photoelectron spectroscopy (XPS) measurements show lead deficiency in both the crystals. The results also reveal a stronger ionic character for PbGeO3 as compared to Pb5Ge3O11 crystal. The binding energy of Ge3 core level in the case of Pb5Ge3O11 crystal is found to be smaller than the binding energy of germanium oxide, thereby indicating the incomplete oxidation of Ge ions in the crystal lattice. On gamma ray irradiation, the transmission of both the crystals is observed to deteriorate uniformly over the entire wavelength range, which has been attributed to the oxidation of some of the lattice Pb ions. On gamma irradiation the changes observed in O1 core level energies for both the crystals are seen to be consistent with the changes noted in the Pb47/2 and Ge3 spectra. Interestingly, the results reveal oxidation of surface Ge atoms with atmospheric oxygen under gamma irradiation.

  12. Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation

    Science.gov (United States)

    Sun, Xinxing; Ehrhardt, Martin; Lotnyk, Andriy; Lorenz, Pierre; Thelander, Erik; Gerlach, Jürgen W.; Smausz, Tomi; Decker, Ulrich; Rauschenbach, Bernd

    2016-01-01

    The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by high-resolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm2 and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm2. Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively. PMID:27292819

  13. Single-Crystal Investigations on Quaternary Clathrates Ba8Cu5Si x Ge41- x ( x = 6, 18, 41)

    Science.gov (United States)

    Yan, X.; Grytsiv, A.; Giester, G.; Bauer, E.; Rogl, P.; Paschen, S.

    2011-05-01

    Type I clathrates have been considered as promising thermoelectric materials due to their special structural characteristics: the "rattling" guest atoms in the larger of the two cages of the clathrate I structure are frequently held responsible for the low lattice thermal conductivity. By single-crystal x-ray diffraction, we investigated the quaternary clathrates Ba8Cu5Si x Ge41- x ( x = 6, 18, 41). Rietveld refinements confirmed that the clathrates in this system crystallize with cubic primitive symmetry, in the type I clathrate structure, and that no phase transitions occur in the temperature range investigated (100 K to 300 K). We derive the concentration dependencies of the Debye temperature, the Einstein temperatures, the static disorder parameters, and the size of the two cages and argue that these dependencies underpin the previously assumed different bonding character of the Ba guest atoms in the larger and smaller cages. The linear thermal expansion coefficients for the samples are derived.

  14. Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

    Science.gov (United States)

    Oka, Hiroshi; Amamoto, Takashi; Koyama, Masahiro; Imai, Yasuhiko; Kimura, Shigeru; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-01-01

    We developed a method of forming single-crystalline germanium-tin (GeSn) alloy on transparent substrates that is based on liquid-phase crystallization. By controlling and designing nucleation during the melting growth process, a highly tensile-strained single-crystalline GeSn layer was grown on a quartz substrate without using any crystal-seeds or catalysts. The peak field-effect hole mobility of 423 cm2/V s was obtained for a top-gate single-crystalline GeSn MOSFET on a quartz substrate with a Sn content of 2.6%, indicating excellent crystal quality and mobility enhancement due to Sn incorporation and tensile strain.

  15. Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

    Science.gov (United States)

    Medenwaldt, R.; Møller, S. P.; Tang-Petersen, S.; Uggerhøj, E.; Elsener, K.; Hage-Ali, M.; Siffert, P.; Stoquert, J.; Sona, P.; Maier, K.

    1990-06-01

    The dramatic peak found in photon spectra from 150 GeV channelled electrons has for the first time been investigated for 70, 150, and 240 GeV electrons incident on crystals with thickness from 100μ (Si). Very pronounced variations for the high energy part of the photon spectra are found. In Si the photon peak is not found for lower energies and thin crystals. For well-aligned electrons in Si the yield is more than 160 times the Bethe-Heitler one. In general the peak in the photon spectra disaapears for incident angles larger than half the critical angle for channeling. Dramatic radiative energy losses are found along axial directions - in 0.6 mm Ge a 150 GeV electron loses more than 60% of its total energy.

  16. Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

    Energy Technology Data Exchange (ETDEWEB)

    Medenwaldt, R.; Moeller, S.P.; Tang-Petersen, S.; Uggerhoej, E. (Aarhus Univ. (Denmark). Inst. of Physics); Elsener, K. (European Organization for Nuclear Research, Geneva (Switzerland)); Hage-Ali, M.; Siffert, P.; Stoquert, J. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires); Sona, P. (Florence Univ. (Italy). Dipt. di Fisica Istituto Nazionale di Fisica Nucleare, Florence (Italy)); Maier, K. (Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany, F.R.))

    1990-06-14

    The dramatic peak found in photon spectra from 150 GeV channelled electrons has for the first time been investigated for 70, 150, and 240 GeV electrons incident on crystals with thicknesses from 100 {mu}m to 1400 {mu}m (Si). Very pronounced variations for the high energy part of the photon spectra are found. In Si the photon peak is not found for lower energies and thin crystals. For well-aligned electrons in Si the yield is more than 160 times the Bethe-Heitler one. In general the peak in the photon spectra disappears for incident angles larger than half the critical angle for channelling. Dramatic radiative energy losses are found along axial directions - in 0.6 mm <110> Ge a 150 GeV electron loses more than 60% of its total energy. (orig.).

  17. Effect of magnetic field on the spin-Peierls transition in single crystal CuGeO

    Institute of Scientific and Technical Information of China (English)

    Wang Qing-Bo; Xu Xiang-Fan; Tao Qian; Wang Hong-Tao; Xu Zhu-An

    2008-01-01

    This paper reports that high quality CuGeO3 single crystals were successfully grown by floating-zone technique and the magnetic property was studied.The temperature dependence of magnetic susceptibility below the spin-Peierls (SP)transition temperature(Tsp)under magnetic fields applying along both the a-and c-axis direction can be fitted well by a model of noninteracting dimmers.The spin gap derived from the fitting is consistent with other reports.There is a very weak anisotropy in the fitting parameters for different directions,which should be expected from a SP system.A small upturn in susceptibility at low temperature due to paramagnetic impurities and/or defects can be observed.A suppression of the upturn by magnetic field is first discovered in this system and the possible origins for this suppression are discussed.

  18. Magnetic phase diagram of the olivine-type Mn2GeO4 single crystal estimated from magnetic, resonance and thermodynamic properties.

    Science.gov (United States)

    Volkov, N V; Mikhashenok, N V; Sablina, K A; Bayukov, O A; Gorev, M V; Balaev, A D; Pankrats, A I; Tugarinov, V I; Velikanov, D A; Molokeev, M S; Popkov, S I

    2013-04-03

    Mn2GeO4 single crystals with the olivine structure grown by the modified flux method have been investigated. Pronounced magnetic phase transitions at T1 = 47.7 K, T2 = 17 K and T3 = 5.5 K, with T2 being dependent on an applied magnetic field, have been found. Based on the data of magnetic, resonance and temperature measurements, the entire phase diagram of Mn2GeO4 has been built. Mn2GeO4 is shown to be a material with a complex magnetic structure consisting of two magnetic subsystems.

  19. Electronic structure of Cu{sub 2}CdGeSe{sub 4} single crystal as determined from X-ray spectroscopy data

    Energy Technology Data Exchange (ETDEWEB)

    Ocheretova, V.A. [National Technical University “Kyiv Polytechnic Institute”, 37 Peremogy Avenue, Kyiv 03036 (Ukraine); Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Eastern European National University, 13 Voli Avenue, Lutsk 43025 (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, 79010 Lviv (Ukraine); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, Kyiv 03142 (Ukraine)

    2015-06-15

    We report on studies of the electronic structure of Cu{sub 2}CdGeSe{sub 4} single crystal by using X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, X-ray photoelectron core-level and valence-band spectra for pristine and Ar{sup +} ion-irradiated surfaces of the Cu{sub 2}CdGeSe{sub 4} single crystal have been recorded. Our XPS results indicate that Cu{sub 2}CdGeSe{sub 4} is rather rigid with respect to Ar{sup +} ion-irradiation: such a treatment does not induce any significant changes of values of the binding energies of core-level electrons as well as of the shapes of the XPS core-level and valence-band spectra of the Cu{sub 2}CdGeSe{sub 4} surface. For the Cu{sub 2}CdGeSe{sub 4} single crystal, the XES bands representing the energy distribution of mainly the valence Cu d, Cd d, Ge p and Se p states have been measured and compared on a common energy scale with its XPS valence-band spectrum. Such a comparison allows for concluding that the Cu 3d and Cd 4d states contribute mainly at the top and at the bottom of the valence band, respectively, while the Ge 4p and Se 4p states in the central and upper portions of the band. These experimental findings are found to be in agreement with literature data of band-structure calculations for this compound. - Highlights: • Electronic structure of Cu{sub 2}CdGeSe{sub 4} single crystal is studied by XPS and XES. • Low hygroscopicity is characteristic of Cu{sub 2}CdGeSe{sub 4} single crystal surface. • Cu 4d states contribute mainly at the bottom of the valence band. • Cu 3d states contribute predominantly at the top of the valence band. • Ge 4p and Se 4p states contribute in the central and upper portions of the band.

  20. Coherent bremsstrahlung and channeling radiation from 40 and 150 GeV electrons and positrons traversing Si and diamond single crystals near planar directions

    Energy Technology Data Exchange (ETDEWEB)

    Medenwaldt, R.; Moeller, S.P.; Soerensen, A.H.; Uggerhoej, E. (Aarhus Univ. (Denmark). Inst. for Synchrotron Radiation); Elsener, K. (European Organization for Nuclear Research, Geneva (Switzerland)); Hage-Ali, M.; Siffert, P.; Stoquert, J. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires); Sona, P. (Florence Univ. (Italy). Dipt. di Fisica Istituto Nazionale di Fisica Nucleare, Florence (Italy))

    1991-05-09

    Along planar directions in both Si and C single crystals the radiation yields from 150GeV electrons are enhanced 40 times or more and the data present the first use of C crystals in the multi-hundred GeV region. For channeled electrons in Si the experimental results agree with calculations using the constant field approximation (CFA). Increasing incident angles reduce rapidly soft photon yields as expected from first order corrections to CFA. The first Born approximation only describes experimental results for large incident angles to planes. (orig.).

  1. Coherent bremsstrahlung and channeling radiation from 40 and 150 GeV electrons and positrons traversing Si and diamond single crystals near planar directions

    Science.gov (United States)

    Medenwaldt, R.; Møller, S. P.; Sørensen, A. H.; Uggerhøj, E.; Elsener, K.; Hage-Ali, M.; Siffert, P.; Stoquert, J.; Sona, P.

    1991-05-01

    Along planar directions in both Si and C single crystals the radiation yields from 150 GeV electrons are enhanced 40 times or more and the data present the first use of C crystals in the multi-hundred GeV region. For channeled electrons in Si the experimental results agree with calculations using the constant field approximation (CFA). Increasing incident angles reduce rapidly soft photon yields as expected from first order corrections to CFA. The first born approximation only describes experimental results for large incident angles to planes.

  2. Irradiation induced defects in deformed $Ni_{3}Ge$ and $Ni_{3}Al$ single crystals

    CERN Document Server

    Murakumo, T; Miyahara, A; Hannuki, T; Sato, A

    2000-01-01

    The effect of plastic deformation on the formation of point defects and defect clusters by electron irradiation has been studied in Ll /sub 2/ ordered Ni/sub 3/Ge and Ni/sub 3/Al by high voltage electron microscopy. It is found that defects are formed preferentially along the Burgers vector directions as linear lines and grow into linear chains of clusters by electron irradiation. This phenomenon is explained by preferential generation of the defects along the antiphase boundary (APE) tubes, in specimens deformed both below and above the peak temperature T/sub p/. Based on three-dimensional analyses of the defect distribution, the formation mechanism of the APE tubes is discussed with particular reference to superdislocation motion and the strengthening of the Ll/sub 2/ ordered compounds of Ni /sub 3/Ge and Ni/sub 3/Al. (44 refs).

  3. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  4. Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5 Nanowires.

    Science.gov (United States)

    Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

    2016-10-12

    A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge2Sb2Te5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

  5. Germanene termination of Ge2Pt crystals on Ge(110)

    NARCIS (Netherlands)

    Bampoulis, Pantelis; Zhang, Lijie; Safaei, A.; van Gastel, Raoul; Poelsema, Bene; Zandvliet, Henricus J.W.

    2014-01-01

    We have investigated the growth of Pt on Ge(1 1 0) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(1 1 0) followed by annealing at 1100 K results in the formation of 3D metallic Pt-Ge nanocrystals. The outermost layer of these crystals exhibits

  6. Single-crystal growth and size control of three novel polar intermetallics: Eu2.94(2)Ca6.06In8Ge8, Eu3.13(2)Ca5.87In8Ge8, and Sr3.23(3)Ca5.77In8Ge8 with crystal structure, chemical bonding, and magnetism studies.

    Science.gov (United States)

    Woo, Hyein; Nam, Gnu; Jang, Eunyoung; Kim, Jin; Lee, Yunho; Ahn, Kyunghan; You, Tae-Soo

    2014-05-05

    Three new quaternary polar intermetallic compounds of Eu2.94(2)Ca6.06In8Ge8, Eu3.13(2)Ca5.87In8Ge8, and Sr3.23(3)Ca5.77In8Ge8 have been synthesized by a metal-flux method using molten indium metal as a reactive flux, and the novel isotypic crystal structures have been characterized by both powder and single-crystal X-ray diffractions. All compounds crystallize in the orthorhombic space group Pmmn (Z = 2, Pearson symbol oP50) with 14 crystallographically unique atomic positions in the asymmetric unit. The lattice parameters are refined as follows: a = 36.928(2) Å, b = 4.511(1) Å, and c = 7.506(1) Å for Eu2.94(2)Ca6.06In8Ge8; a = 37.171(19) Å, b = 4.531(2) Å, and c = 7.560(4) Å for Eu3.13(2)Ca5.87In8Ge8; and a = 37.350(2) Å, b = 4.550(3) Å, and c = 7.593(4) Å for Sr3.23(3)Ca5.77In8Ge8. In particular, single crystals of two Eu-containing compounds are obtained as bundles of bar/needle-shaped crystals, and the thicknesses of those crystals can be controlled in the range between ca. 300 μm and ca. <10 μm by adjusting several reaction conditions, including the reaction cooling rate and the centrifugation temperature. The overall crystal structure is illustrated as an assembly of (1) the three-dimensional anionic framework, which is formed by the chains of edge-sharing InGe4 tetrahedra and the annulene-like "12-membered anionic rings" connected via Ge2 dimers, and (2) the cationic mixed sites embedded in the space between the anionic frameworks. Theoretical investigations based on tight-binding linear muffin-tin orbital (TB-LMTO) calculations provide a comprehesive understanding of the overall electronic structure and chemical bonding observed among anionic components and between anions and cations. Electron localization function (ELF) and electron density map present chemical bond strengths and polarization within the anionic framework. Magnetic susceptibility measurement proves an antiferromagnetic (AFM) ordering of Eu atoms below 4 K with a reduced effective

  7. Intermediate valence to heavy fermion through a quantum phase transition in Yb3(Rh 1 -xTx )4Ge13 (T =Co ,Ir ) single crystals

    Science.gov (United States)

    Rai, Binod K.; Oswald, Iain W. H.; Chan, Julia Y.; Morosan, E.

    2016-01-01

    Single crystals of Yb3(Rh 1 -xTx )4Ge13 (T =Co ,Ir ) have been grown using the self-flux method. Powder x-ray diffraction data on these compounds are consistent with the cubic structure with space group P m 3 ¯n . Intermediate-valence behavior is observed in Yb3(Rh 1 -xTx )4Ge13 upon T = Co doping, while T = Ir doping drives the system into a heavy-fermion state. Antiferromagnetic order is observed in the Ir-doped samples Yb3(Rh 1 -xTx )4Ge13 for 0.5 xc = 0.5, accompanied by non-Fermi-liquid behavior evidenced by logarithmic divergence of the specific heat and linear temperature dependence of the resistivity. The Fermi-liquid behavior is recovered with the application of large magnetic fields.

  8. Growth and thermal stability of single crystal metastable semiconducting (GaSb)/sub 1-x/Ge/sub x/ films

    Energy Technology Data Exchange (ETDEWEB)

    Cadien, K.C.; Eltoukhy, A.H.; Greene, J.E.

    1981-01-01

    Epitaxial metastable (GaSb)/sub 1-x/)Ge/sub x/ alloys with compositions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. The maximum growth temperature T/sub s/ ranged from 490 to 520/sup 0/C depending on the alloy composition. An essential feature allowing the growth of these metastable materials was low energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second phase precipitates. A phase map plotted as a function of T/sub s/ showed a very narrow transition region between metastable single phase alloys and equilibrium two phase structures. Annealing experiments indicated that the metastable films exhibit good high temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two phase alloy is obtained. While the calculated free energy difference between the single phase metastable and equilibrium states is approx. 18 MeV atom/sup -1/, the measured activation barrier for the transformation is approx. 3 eV. All films were p-type with room temperature hole concentrations varying from 10/sup 16/ to 10/sup 19/ cm/sup -3/ and mobilities between 10 and 720 cm/sup 2//V-s, depending on film composition.

  9. Growth of single-crystal metastable semiconducting (GaSb)/sub 1//sub -//sub x/Ge/sub x/ films

    Energy Technology Data Exchange (ETDEWEB)

    Cadien, K.C.; Eltoukhy, A.H.; Greene, J.E.

    1981-05-15

    Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from 10/sup 16/ to 10/sup 19/ cm/sup -3/ and mobilities between 10 and 720 cm/sup 2// V s, depending on film composition.

  10. Radiation emission and its influence on the motion of multi-GeV electrons and positrons incident on a single diamond crystal

    CERN Document Server

    Kirsebom, K; Uggerhøj, Erik; Elsener, K; Ballestrero, S; Sona, P; Connell, S H; Sellschop, J P Friedel; Vilakazi, Z Z

    2001-01-01

    A few years ago the CERN NA-43 collaboration installed an upgraded detector system which allows a detailed analysis of the particle motion before, during and after penetration of a crystal. Also, essentially perfect diamond crystals were produced by the collaborators from Schonland Research Centre. These facts have led to new and very detailed investigations of QED-processes in strong crystalline fields. Along axial directions the radiation emission is enhanced by more than two orders of magnitude. For incidence on a 0.7 mm thick diamond crystal of well-aligned 149 GeV electrons, 35% give rise to a high energy photon peak at approximately=120 GeV. For 243 GeV electrons and approximately=200 GeV photons, this number decreases to 25%-which may be an indication of quantum suppression. Different measurements of the photon multiplicities show that in most cases positrons and electrons emit equal number of photons. The dramatic radiation emission leads to a strong reduction in transverse energy and all electrons in...

  11. Single Crystals (M = Fe, Co)

    Science.gov (United States)

    Cabrera-Baez, M.; Magnavita, E. Thizay; Ribeiro, Raquel A.; Avila, Marcos A.

    2014-06-01

    FeGa3 and related compounds have been subjects of recent investigation for their interesting thermoelectric, electronic, and magnetic behaviors. Here, single crystals of FeGa3- y Ge y were grown by the self-flux technique with effective y = 0, 0.09(1), 0.11(1), and 0.17(1) in order to investigate the evolution of the diamagnetic semiconducting compound FeGa3 into a ferromagnetic metal, which occurs through the electron doping and band structure modifications that result from substitution of Ge for Ga. Heat capacity and magnetization measurements reveal non-Fermi liquid behavior in the vicinity of the transition from a paramagnetic to ferromagnetic ground state, suggesting the presence of a ferromagnetic quantum critical point (FMQCP). We also present the first results of hole doping in this system by the growth of FeGa3- y Zn y single crystals, and electron- and hole doping of the related compound CoGa3 by CoGa3- y Ge y and CoGa3- y Zn y crystal growths, aiming to search for further routes to band structure and charge carrier tuning, thermoelectric optimization, and quantum criticality in this family of compounds. The ability to tune the charge carrier type warrants further investigation of the MGa3 system's thermoelectric properties above room temperature.

  12. Radiation emission and its influence on the motion of multi-GeV electrons and positrons incident on a single diamond crystal

    Energy Technology Data Exchange (ETDEWEB)

    Kirsebom, K.; Mikkelsen, U.; Uggerhoej, E. E-mail: ugh@ifa.au.dk; Elsener, K.; Ballestrero, S.; Sona, P.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z

    2001-04-01

    A few years ago the CERN NA-43 collaboration installed an upgraded detector system which allows a detailed analysis of the particle motion before, during and after penetration of a crystal. Also, essentially perfect diamond crystals were produced by the collaborators from Schonland Research Centre. These facts have led to new and very detailed investigations of QED-processes in strong crystalline fields. Along axial directions the radiation emission is enhanced by more than two orders of magnitude. For incidence on a 0.7 mm thick diamond crystal of well-aligned 149 GeV electrons, 35% give rise to a high energy photon peak at {approx_equal}120 GeV. For 243 GeV electrons and {approx_equal}200 GeV photons, this number decreases to 25% - which may be an indication of quantum suppression. Different measurements of the photon multiplicities show that in most cases positrons and electrons emit equal number of photons. The dramatic radiation emission leads to a strong reduction in transverse energy and all electrons incident within the critical angle are captured to high lying channeling states and exit at channeling angles corresponding to their final energy - a completely new result for negatively charged particles. For the first time, we present an analysis where the photon is used as a 'messenger' for the transverse energy of the electron during the formation time and we conclude that the more energetic photons are created closer to the string and emitted in the axial direction - in contrast to earlier calculations using the Dirac equation. The strongly enhanced radiation emission leads to angular cooling for electrons but angular heating for positrons and we show that at higher electron energies the cooling becomes stronger as expected from theory. For electrons, the radiative cooling gives rise to a capture of above-barrier particles into the channeled beam. The total radiative energy loss is shown as not to follow the {gamma}{sup 2}-law expected from

  13. Radiation emission and its influence on the motion of multi-GeV electrons and positrons incident on a single diamond crystal

    Science.gov (United States)

    Kirsebom, K.; Mikkelsen, U.; Uggerhøj, E.; Elsener, K.; Ballestrero, S.; Sona, P.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.

    2001-04-01

    A few years ago the CERN NA-43 collaboration installed an upgraded detector system which allows a detailed analysis of the particle motion before, during and after penetration of a crystal. Also, essentially perfect diamond crystals were produced by the collaborators from Schonland Research Centre. These facts have led to new and very detailed investigations of QED-processes in strong crystalline fields. Along axial directions the radiation emission is enhanced by more than two orders of magnitude. For incidence on a 0.7 mm thick diamond crystal of well-aligned 149 GeV electrons, 35% give rise to a high energy photon peak at ≃120 GeV. For 243 GeV electrons and ≃200 GeV photons, this number decreases to 25% - which may be an indication of quantum suppression. Different measurements of the photon multiplicities show that in most cases positrons and electrons emit equal number of photons. The dramatic radiation emission leads to a strong reduction in transverse energy and all electrons incident within the critical angle are captured to high lying channeling states and exit at channeling angles corresponding to their final energy - a completely new result for negatively charged particles. For the first time, we present an analysis where the photon is used as a `messenger' for the transverse energy of the electron during the formation time and we conclude that the more energetic photons are created closer to the string and emitted in the axial direction - in contrast to earlier calculations using the Dirac equation. The strongly enhanced radiation emission leads to angular cooling for electrons but angular heating for positrons and we show that at higher electron energies the cooling becomes stronger as expected from theory. For electrons, the radiative cooling gives rise to a capture of above-barrier particles into the channeled beam. The total radiative energy loss is shown as not to follow the γ2-law expected from classical electrodynamics, but turns over

  14. SINGLE CRYSTAL NEUTRON DIFFRACTION.

    Energy Technology Data Exchange (ETDEWEB)

    KOETZLE,T.F.

    2001-03-13

    Single-crystal neutron diffraction measures the elastic Bragg reflection intensities from crystals of a material, the structure of which is the subject of investigation. A single crystal is placed in a beam of neutrons produced at a nuclear reactor or at a proton accelerator-based spallation source. Single-crystal diffraction measurements are commonly made at thermal neutron beam energies, which correspond to neutron wavelengths in the neighborhood of 1 Angstrom. For high-resolution studies requiring shorter wavelengths (ca. 0.3-0.8 Angstroms), a pulsed spallation source or a high-temperature moderator (a ''hot source'') at a reactor may be used. When complex structures with large unit-cell repeats are under investigation, as is the case in structural biology, a cryogenic-temperature moderator (a ''cold source'') may be employed to obtain longer neutron wavelengths (ca. 4-10 Angstroms). A single-crystal neutron diffraction analysis will determine the crystal structure of the material, typically including its unit cell and space group, the positions of the atomic nuclei and their mean-square displacements, and relevant site occupancies. Because the neutron possesses a magnetic moment, the magnetic structure of the material can be determined as well, from the magnetic contribution to the Bragg intensities. This latter aspect falls beyond the scope of the present unit; for information on magnetic scattering of neutrons see Unit 14.3. Instruments for single-crystal diffraction (single-crystal diffractometers or SCDs) are generally available at the major neutron scattering center facilities. Beam time on many of these instruments is available through a proposal mechanism. A listing of neutron SCD instruments and their corresponding facility contacts is included in an appendix accompanying this unit.

  15. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Arivanandhan, Mukannan, E-mail: rmarivu@ipc.shizuoka.ac.jp [Department of Electronics and Materials Science, Graduate School of Engineering, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Gotoh, Raira; Fujiwara, Kozo; Uda, Satoshi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Hayakawa, Yasuhiro [Department of Electronics and Materials Science, Graduate School of Engineering, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan)

    2015-08-05

    Highlights: • Effective segregation of Ge in B and Ge codoped Czochralski-Si crystal growth was analyzed. • The equilibrium segregation coefficient of Ge was calculated. • The experimentally results were analytically analyzed using partitioning theory. - Abstract: The segregation of Ge in B and Ge codoped Czochralski (CZ)-Si crystal growth was investigated. The concentration of Ge in heavily Ge codoped CZ-Si was measured by electron probe micro analysis (EPMA) and X-ray fluorescence spectroscopy. The effective segregation coefficient of Ge (k{sub eff}) was calculated by fitting the EPMA data to the normal freezing equation, and by taking the logarithmic ratio of the Ge concentrations at the seed and tail of the ingots (top to bottom approach). The k{sub eff} of Ge increased from 0.30 to 0.55, when the initial Ge concentration in the Si melt (C{sub L(o)}{sup Ge}) was increased from 3 × 10{sup 19} to 3 × 10{sup 21} cm{sup −3}. To avoid cellular growth, the crystal pulling rate was decreased for heavily Ge codoped crystal growth (C{sub L(o)}{sup Ge} > 3 × 10{sup 20} cm{sup −3}). The equilibrium segregation coefficient (k{sub 0}) of Ge was calculated by partitioning theory, and was smaller than the experimentally estimated k{sub eff}. The variation of k{sub eff} from k{sub 0} was discussed based on Ge clustering in the heavily Ge codoped crystal, which led to changes in the bonding and strain energies caused by the incorporation of Ge into Si.

  16. Crystal structure of the Nd(Ru{sub 0.6}Ge{sub 0.4}){sub 2} and ErRuGe compounds

    Energy Technology Data Exchange (ETDEWEB)

    Rizzoli, C.; Sologub, O.; Salamakha, P

    2003-02-17

    Using X-ray powder and single crystal diffraction, the crystal structures of the Nd(Ru{sub 0.6}Ge{sub 0.4}){sub 2} and ErRuGe compounds were investigated. The compounds belong to the KHg{sub 2} and TiNiSi type structure, respectively.

  17. Optical absorption, piezoelectric effect and second harmonic generation studies of single crystal AgGaGe3Se7.6Te0.4 solid solution

    Science.gov (United States)

    Myronchuk, G. L.; Lakshminarayana, G.; Kityk, I. V.; Krymus, A. S.; Parasyuk, O. V.; Rudysh, M. Ya.; Shchepanskyi, P. A.; Piasecki, M.

    2017-03-01

    Spectral features of absorption were studied for novel AgGaGe3Se7.6Te0.4 solid-state alloys at different temperatures. The synthesized crystals structure parameters are obtained by the X-ray Rietveld refinement method. During increasing temperature from 100 up to 300 K, the energy gap of AgGaGe3Se7.6Te0.4 decreases linearly from 2.05 up to 1.94 eV at a rate 5.7 × 10-4 eV/K. The magnitudes of piezoelectric coefficients are significantly changed and demonstrate substantial anisotropy. At room temperature, these values are equal to 5.2 pm/V ( d 11), 31.5 pm/V ( d 22) and 35.5 pm/V ( d 33). It is crucial that with an increasing temperature the piezoelectric efficiencies are increased. We have explored temperature and laser-induced changes of piezoelectric coefficients.

  18. Intermediate valence in single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} (0 ≤ x ≤ 1)

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Binod K.; Morosan, E. [Department of Physics and Astronomy, Rice University, Houston, Texas 77005 (United States)

    2015-04-01

    Single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu{sub 3}Rh{sub 4}Ge{sub 13} compound tunes this cubic system’s properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ≤ x ≤0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series.

  19. SiGe crystal growth aboard the international space station

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Tsukada, T.; Inatomi, Y.; Miyata, H.; Tanaka, R.

    2015-05-01

    A silicon germanium mixed crystal Si1-xGex (x~0.5) 10 mm in diameter and 9.2 mm in length was grown by the traveling liquidus-zone (TLZ) method in microgravity by suppressing convection in a melt. Ge concentration of 49.8±2.5 at% has been established for the whole of the grown crystal. Compared with the former space experiment, concentration variation in the axial direction increased from ±1.5 at% to ±2.5 at% although average Ge concentration reached to nearly 50 at%. Excellent radial Ge compositional uniformity 52±0.5 at% was established in the region of 7-9 mm growth length, where axial compositional uniformity was also excellent. The single crystalline region is about 5 mm in length. The interface shape change from convex to concave is implied from both experimental results and numerical analysis. The possible cause of increase in concentration variation and interface shape change and its relation to the two-dimensional growth model are discussed.

  20. Optical spectra and band structure of Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals: experiment and theory.

    Science.gov (United States)

    Reshak, A H; Parasyuk, O V; Fedorchuk, A O; Kamarudin, H; Auluck, S; Chyský, J

    2013-12-05

    Theoretical and experimental studies of the Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which are responsible for their optoelectronic features. The theoretical investigations were performed by means of DFT calculations using different exchange-correlation potentials. The experimental studies were carried out using the modulated VUV ellipsometry for dielectric constants and birefringence studies. The comparison of the structure obtained from X-ray with the theoretically optimized structure is presented. The crucial role of the intrinsic defect states is manifested in the choice of the exchange correlation potential used. The data may be applicable for a large number of the ternary chalcogenides which are sensitive to the presence of the local disordered states near the band edges.

  1. Far-infrared spectroscopy of Zn{sub 1−x}Mn{sub x}GeAs{sub 2} single crystals: Plasma damping influence on plasmon – Phonon interaction

    Energy Technology Data Exchange (ETDEWEB)

    Romcevic, N., E-mail: romcevi@ipb.ac.rs [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Romcevic, M. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Dobrowolski, W.D.; Kilanski, L. [Institute of Physics, Polish Academy of Science, 02-668 Warsaw (Poland); Petrovic, M.; Trajic, J.; Hadzic, B.; Lazarevic, Z.; Gilic, M.; Ristic-Djurovic, J.L.; Paunovic, N. [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Reszka, A.; Kowalski, B.J. [Institute of Physics, Polish Academy of Science, 02-668 Warsaw (Poland); Fedorchenko, I.V.; Marenkin, S.F. [Kurnakov Institute of General and Inorganic Chemistry RAS, 119991 Moscow (Russian Federation); National Institute of Science and Technology, MISiS, Moscow (Russian Federation)

    2015-11-15

    The interest in thorough description of Zn{sub 1–x}Mn{sub x}GeAs{sub 2} arises from its suitability for application in the field of non-linear optics. The room temperature far-infrared reflectivity spectra of single crystals Zn{sub 1–x}Mn{sub x}GeAs{sub 2}, where 0 ≤ x ≤ 0.078, were measured in the spectral range from 80 cm{sup −1} to 500 cm{sup −1}. The spectra were analyzed by fitting procedure using a dielectric function which includes interaction between a plasmon and two different phonons. The detected phonons are in excellent agreement with the theoretical predictions. The MnAs cluster phonons are detected, as well. - Highlights: • Zn{sub 1−x}Mn{sub x}GeAs{sub 2} samples were grown using a direct fusion method. • Differencies between plasmon-phonon and plasmon-two different phonon interaction were discussed. • Plasmon damping influence on plasmon – (two) phonon interaction was registered. • MnAs clusters phonons are detected.

  2. Volume reflection of ultrarelativistic particles in single crystals

    Directory of Open Access Journals (Sweden)

    V. A. Maisheev

    2007-08-01

    Full Text Available An analytical description of volume reflection of charged ultrarelativistic particles in bent single crystals is considered. The relation describing the angle of volume reflection as a function of the transversal energy is obtained. Different angle distributions of the scattered protons in single crystals are found. Results of calculations for 400 GeV protons scattered by the silicon single crystal are presented.

  3. The optical properties of bismuth germanium oxide single crystals

    Directory of Open Access Journals (Sweden)

    ANDREJA VALCIC

    2000-09-01

    Full Text Available Bi12GeO20 single crystals were grown by the Czochralski technique. Suitable polishing and etching solutions were determined. Reflection spectra were recorded in the wave numbers range 20–5000 cm–1, and compared with the spectra of Bi12SiO20 single crystals to study the position of the phonon modes. The optical constants of the Bi12GeO20 single crystals were obtained using Kramers-Kronig analysis. The obtained results are dicussed and compared with published data.

  4. Electronic structure of antiferromagnetic UN and UPtGe single crystals from optical and magneto-optical spectroscopy; Elektronische Struktur von antiferromagnetischen UN- und UPtGe-Einkristallen aus optischer und magnetooptischer Spektroskopie

    Energy Technology Data Exchange (ETDEWEB)

    Marutzky, M.

    2006-10-12

    In this thesis the study of the magneto-optical Kerr effect and the determination of the optical constants by means of ellipsometry and Fourier-transformation infrared spectroscopy of UN and UPtGe is described. In UPtGe an optical anisotropy was detected over a spectral range from 6 meV to 32 eV. (HSI)

  5. Structural phase transitions in Bi[sub 2]V[sub 1[minus]x]Ge[sub x]O[sub 5. 5[minus]x/2] (x = 0. 2, 0. 4, and 0. 6) single crystals: X-ray crystallographic study

    Energy Technology Data Exchange (ETDEWEB)

    Sooryanarayana, K.; Guru Row, T.N.; Varma, K.B.R. (Indian Inst. of Science, Bangalore (India))

    1999-02-01

    Single crystals of Bi[sub 2]V[sub 1[minus]x]Ge[sub x]O[sub 5.5[minus]x/2] (x = 0.2, 0.4, and 0.6) were grown by slow cooling of melts. Bismuth vanadate transforms from an orthorhombic to a tetragonal structure and subsequently to an orthorhombic system when the Ge[sup 4+] concentration was varied from x = 0.2 to x = 0.6. All of these compositions crystallized in polar space groups (Aba2, F4mm, and Fmm2 for x = 0.2, 0.4, and 0.6, respectively). The structures were fully determined by single crystal X-ray diffraction studies.

  6. ZnGeP2单晶生长与安瓿设计研究%Study on Growth and Ampoule Design for ZnGeP2 Single Crystal

    Institute of Scientific and Technical Information of China (English)

    梁栋程; 赵北君; 朱世富; 陈宝军; 何知宇; 范强; 徐婷

    2010-01-01

    根据晶体自发成核几何淘汰规律,结合ZnGeP2晶体的结晶习性,研究设计出生长完整ZnGeP2单晶体的双层镀碳石英安瓿,其关键技术参数为:安瓿长径比6~7,籽晶袋长度≥25 mm,安瓿主体与籽晶袋之间的放肩角在25°左右.在上述生长安瓿中,采用改进的垂直布里奇曼法,分段控制下降速率,成功生长出尺寸为22 mm×40 mm的ZnGeP2单晶.对晶体进行X射线分析,获得(204)面单晶衍射谱和回摆谱,衍射峰峰形尖锐无劈裂,回摆谱对称性好,半峰宽为0.063 °;晶片在2~12 μm波段范围内的红外透过率达50%以上.实验结果表明,研究设计的生长安瓿适合于磷锗锌单晶生长,能够获得较高质量的单晶体.

  7. Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Brandon [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-14

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  8. Gettering effects in Si{sub x}Ge{sub 1-x} single crystalline wafers

    Energy Technology Data Exchange (ETDEWEB)

    Wollweber, J.; Schulz, D.; Schroeder, W. [Institut fuer Kristallzuechtung, Berlin (Germany)] [and others

    1995-08-01

    The new interest in single crystal growth of SiGe solid solutions is caused by the development of advanced electronics. The SiGe alloys are mostly used in the form of Si/Si{sub x}Ge{sub 1-x} epitaxial layers in heterostructures, the perfect bulk crystals are required to study fundamental properties. Furthermore, Si{sub x}Ge{sub 1-x} crystals can be used as a substrate material instead of Silicon in order to avoid the buffer layers between the Silicon substrate and strained Si{sub x}Ge{sub 1-x}. Monocrystalline SiGe alloys may be a potential candidate as a base material for infrared solar cells too because of an enhanced IR-sensitivity. In this paper we report a new approach to the growth of Si{sub x}Ge{sub 1-x} single crystals (up to 2{double_prime} in diameter) using the crucible free rf-heated float zone technique as well as the Czochralski-technique for solar cells. The goal is to produce solar cells with an increased photo current in comparison to Silicon cells. based on the lower bandgap of the alloyed crystal. In order to be able to use the Si cells technology (a matter still pending to be proven), low contents of Ge are intended, desirably in the range of about x=0.2. It is worth to mention, that in the conventional Silicon cell processes which give efficiencies up to 18-19%, this efficiency is not limited by the bulk base recombination in the lifetime is above 200 {mu}s there. We can conclude, that there is no basic limitation did prevents Si{sub x}Ge{sub 1-x} wafers to present high lifetimes, above 200{mu}s, at least if the Ge content is below 5%. We can also conclude that the phosphorous gettering from a POCl{sub 3} source, used in silicon, can be successfully used to enhance lifetimes in Si{sub x}Ge{sub 1-x}, at least for the Ge concentration used here.

  9. Synthesis of highly monodisperse Ge crystals in a capacitively coupled flow through reactor for photovoltaic applications

    Science.gov (United States)

    Gresback, Ryan; Kortshagen, Uwe

    2006-10-01

    Germanium nanocrystals are interesting candidates for quantum dot-based solar cells. While the band gap of bulk Ge is ˜0.7 eV, the energy gap can be increased due to quantum confinement to ˜ 2eV for Ge particles of ˜3 nm in size. With a single material, Ge nanocrystals of sizes from 3 -15 nm would thus allow to span the entire range of band gaps that is of interest for photovoltaic devices. Moreover, compared to many other quantum dot materials that are currently studied for photovoltaic applications, Ge is perceived as non-toxic and environmentally benign. Ge nanocrystals are synthesized in a tubular, capacitively coupled flow through reactor. Germanium tetrachloride is used as a precursor. It is introduced into the plasma by a flow of argon and hydrogen. At typical pressures of 2 Torr and 40 W of RF power at 13.56 MHz, Ge crystals are generated and reside in the plasma for several tens of milliseconds. The size of the nanocrystals can be controlled in a range from 3-20 nm through the residence time. Particles are highly monodisperse. Organically passivated Ge nanocrystals self-assemble into monolayers when cast from colloidal solutions.

  10. Thermoelectric Properties of Czochralski GeSi Crystal

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and electric conductive type. As discussed in the experiment result, the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper, the relationship of Seebeck coefficient against content, orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with 〈111〉orientation is smaller than that in 〈100〉 at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases, the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition, the specimens of bulk GeSi alloy crystals for experiment were grown by the Czochralski method through varying the pulling rate during the growing process.

  11. Single Crystal Surfaces

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2014-06-01

    The present work studies (0001) Al2O3 and (111) Al2MgO4 wetting with pure molten Al by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) under Ar at PO2 10-15 Pa. Al pure liquid wets a smooth and chemically homogeneous surface of an inert solid, the wetting driving force ( t, T) can be readily studied when surface solid roughness increases in the system. Both crystals planes (0001) Al2O3 and (111) Al2MgO4 have crystallographic surfaces with identical O-2 crystalline positions however considering Mg2+ content in Al2MgO4 structure may influence a reactive mode. Kinetic models results under similar experimental conditions show that Al wetting on (0001) Al2O3 is less reactive than (111) Al2MgO4, however at >1273 K (1000 °C) (0001) Al2O3 transformation occurs and a transition of wetting improves. The (111) Al2MgO4 and Al system promotes interface formations that slow its wetting process.

  12. Influence of Containment on Defects in GeSi Crystals

    Science.gov (United States)

    Volz, M. P.; Croell, A.; Mazuruk, K.

    2009-01-01

    Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10(exp -5) m. A small meniscus bridges the gap between the top of the crystal and the wall. Key parameters involved in achieving detached growth are the contact angle between the melt and crucible and the pressure differential across the meniscus. Sessile drop measurements were used to determine the wetting angles of Ge(sub 1-x)Si(sub x) melts on a variety of substrates and found that the highest wetting angles were achieved with pyrolitic boron nitride (pBN). GeSi crystals have been repeatedly grown detached in pBN crucibles but only occasionally in crucibles with lower wetting angles. Experiments have been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. This was done by adjusting the temperature profile after partial melting of the starting material. In a separate set of experiments, the pressure was controlled by connecting the volume below the meniscus to a regulated gas supply. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a low wetting angle over a relatively narrow range of pressure differential. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  13. Crystal ball single event display

    Energy Technology Data Exchange (ETDEWEB)

    Grosnick, D.; Gibson, A. [Valparaiso Univ., IN (United States). Dept. of Physics and Astronomy; Allgower, C. [Argonne National Lab., IL (United States). High Energy Physics Div.; Alyea, J. [Valparaiso Univ., IN (United States). Dept. of Physics and Astronomy]|[Argonne National Lab., IL (United States). High Energy Physics Div.

    1997-10-15

    The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about {pi}{sup o}`s and {eta}`s formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer.

  14. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0crystallization of amorphous Si{sub 1-x}Ge{sub x} thin films with 0.3Ge samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0crystallization method and Ge content. The defect density for solid-phase crystallized SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  15. Simulation of a Laue lens with bent Ge(111) crystals

    CERN Document Server

    Valsan, Vineeth; Frontera, Filippo; Liccardo, Vincenzo; Caroli, Ezio; Stephen, John B

    2015-01-01

    In the context of Laue project for focusing hard X-/ soft gamma-rays, an entire Laue lens, using bent Ge(111) crystal tiles, with 40 meters curvature radius, is simulated with a focal length of 20 meters. The focusing energy band is between 80 keV and 600 keV. The distortion of the output image of the lens on the focal plane due to the effect of crystal tile misalignment as well as the radial distortion arising from the curvature of the crystal is discussed in detail. Expected detection efficiency and instrument background is also estimated. Finally the sensitivity of the Laue lens is calculated. A quantitative analysis of the results of these simulation is also presented.

  16. Stacking fault energy in some single crystals

    Institute of Scientific and Technical Information of China (English)

    Aditya M.Vora

    2012-01-01

    The stacking fault energy of single crystals has been reported using the peak shift method.Presently studied all single crystals are grown by using a direct vapor transport (DVT) technique in the laboratory.The structural characterizations of these crystals are made by XRD.Considerable variations are shown in deformation (α) and growth (β) probabilities in single crystals due to off-stoichiometry,which possesses the stacking fault in the single crystal.

  17. Single crystal growth of europium and ytterbium based intermetallic compounds using metal flux technique

    Indian Academy of Sciences (India)

    Sumanta Sarkar; Sebastian C Peter

    2012-11-01

    This article covers the use of indium as a potential metal solvent for the crystal growth of europium and ytterbium-based intermetallic compounds. A brief view about the advantage of metal flux technique and the use of indium as reactive and non-reactive flux are outlined. Large single crystals of EuGe2, EuCoGe3 and Yb2AuGe3 compounds were obtained in high yield from the reactions of the elements in liquid indium. The results presented here demonstrate that considerable advances in the discovery of single crystal growth of complex phases are achievable utilizing molten metals as solvents.

  18. Crystallization Growth of Single Crystal Cu by ContinuousCasting

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Crystallization growth of single-crystal Cu by continuous casting has been investigated using selfdesigned horizontal continuous casting equipment and XRD. Experimental results showed that the crystallization plane of (311), (220) and (111) were eliminated sequentially in evolutionary process. The final growth plane of crystal was (200), the direction of crystallization was [100],the growth direction of both sides of the rod inclined to axis, and the degree of deviation of direction [100] from the crystal axis was less than 10. In order to produce high quality single crystal, the solid-liquid interface morphology must be smooth, even be planar.

  19. Crystal structure and thermal expansion of Mn(1-x)Fe(x)Ge.

    Science.gov (United States)

    Dyadkin, Vadim; Grigoriev, Sergey; Ovsyannikov, Sergey V; Bykova, Elena; Dubrovinsky, Leonid; Tsvyashchenko, Anatoly; Fomicheva, L N; Chernyshov, Dmitry

    2014-08-01

    A series of temperature-dependent single-crystal and powder diffraction experiments has been carried out using synchrotron radiation in order to characterize the monogermanides of Mn, Fe and their solid solutions. The MnGe single crystal is found to be enantiopure and we report the absolute structure determination. The thermal expansion, parametrized with the Debye model, is discussed from the temperature-dependent powder diffraction measurements for Mn(1-x)Fe(x)Ge (x = 0, 0.1, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.75, 0.8, 0.9). Whereas the unit-cell dimension and the Debye temperature follow a linear trend as a function of composition, the thermal expansion coefficient deviates from linear dependence with increasing Mn content. No structural phase transformations have been observed for any composition in the temperature range 80-500 K for both single-crystal and powder diffraction, indicating that the phase transition previously observed with neutron powder diffraction most probably has a magnetic origin.

  20. Observation of focusing of 400 GeV/c proton beam with the help of bent crystals

    CERN Document Server

    Scandale, W; Butcher, M; Cerutti, F; Gilardoni, S; Lechner, A; Losito, R; Masi, A; Metral, E; Mirarchi, D; Montesano, S; Redaelli, S; Smirnov, G; Bandiera, L; Baricordi, S; Dalpiaz, P; Guidi, V; Mazzolari, A; Vincenzi, D; Claps, G; Dabagov, S; Hampai, D; Murtas, F; Cavoto, G; Garattini, M; Iacoangeli, F; Ludovici, L; Santacesaria, R; Valente, P; Galluccio, F; Afonin, A G; Chesnokov, Yu A; Chirkov, P N; Maisheev, V A; Sandomirskiy, Yu E; Yazynin, I A; Kovalenko, A D; Taratin, A M; Gavrikov, Yu A; Ivanov, Yu M; Lapina, L P; Ferguson, W; Fulcher, J; Hall, G; Pesaresi, M; Raymond, M

    2014-01-01

    The results of observation and studies of focusing of 400 GeV/c proton beam with the help of bent single crystals are presented. Two silicon crystals have been used in the measurements. The focal length of the first and second crystals is found to be 1.48 m and 0.68 m, respectively. The mean square size of the horizontal profile in the focus was 3.1 and 4.3 times as small as at the exit of the crystals.

  1. Optical absorption, piezoelectric effect and second harmonic generation studies of single crystal AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid solution

    Energy Technology Data Exchange (ETDEWEB)

    Myronchuk, G.L.; Krymus, A.S.; Piasecki, M. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Lakshminarayana, G. [Universiti Putra Malaysia, Wireless and Photonic Networks Research Centre, Faculty of Engineering, Serdang, Selangor (Malaysia); Kityk, I.V. [Czestochowa University of Technology, Faculty of Electrical Engineering, Czestochowa (Poland); Eastern European National University, Physics Department, Lutsk (Ukraine); Parasyuk, O.V. [Eastern European National University, Department of Chemistry, Lutsk (Ukraine); Rudysh, M.Ya.; Shchepanskyi, P.A. [Institute of Physics, J. Dlugosz University, Czestochowa (Poland); Ivan Franko National University of Lviv, Physics Department, Lviv (Ukraine)

    2017-03-15

    Spectral features of absorption were studied for novel AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} solid-state alloys at different temperatures. The synthesized crystals structure parameters are obtained by the X-ray Rietveld refinement method. During increasing temperature from 100 up to 300 K, the energy gap of AgGaGe{sub 3}Se{sub 7.6}Te{sub 0.4} decreases linearly from 2.05 up to 1.94 eV at a rate 5.7 x 10{sup -4} eV/K. The magnitudes of piezoelectric coefficients are significantly changed and demonstrate substantial anisotropy. At room temperature, these values are equal to 5.2 pm/V (d{sub 11}), 31.5 pm/V (d{sub 22}) and 35.5 pm/V (d{sub 33}). It is crucial that with an increasing temperature the piezoelectric efficiencies are increased. We have explored temperature and laser-induced changes of piezoelectric coefficients. (orig.)

  2. Patterning of Perovskite Single Crystals

    KAUST Repository

    Corzo, Daniel

    2017-06-12

    As the internet-of-things hardware integration continues to develop and the requirements for electronics keep diversifying and expanding, the necessity for specialized properties other than the classical semiconductor performance becomes apparent. The success of emerging semiconductor materials depends on the manufacturability and cost as much as on the properties and performance they offer. Solution-based semiconductors are an emerging concept that offers the advantage of being compatible with large-scale manufacturing techniques and have the potential to yield high-quality electronic devices at a lower cost than currently available solutions. In this work, patterns of high-quality MAPbBr3 perovskite single crystals in specific locations are achieved through the modification of the substrate properties and solvent engineering. The fabrication of the substrates involved modifying the surface adhesion forces through functionalization with self-assembled monolayers and patterning them by photolithography processes. Spin coating and blade coating were used to deposit the perovskite solution on the modified silicon substrates. While single crystal perovskites were obtained with the modification of substrates alone, solvent engineering helped with improving the Marangoni flows in the deposited droplets by increasing the contact angle and lowering the evaporation rate, therefore controlling and improving the shape of the grown perovskite crystals. The methodology is extended to other types of perovskites such as the transparent MAPbCl3 and the lead-free MABi2I9, demonstrating the adaptability of the process. Adapting the process to electrode arrays opened up the path towards the fabrication of optoelectronic devices including photodetectors and field-effect transistors, for which the first iterations are demonstrated. Overall, manufacturing and integration techniques permitting the fabrication of single crystalline devices, such as the method in this thesis work, are

  3. Mechanically worked single crystal article

    Energy Technology Data Exchange (ETDEWEB)

    Gell, M. L.; Giamei, A. F.

    1985-07-09

    A single crystal nickel base superalloy component, such as a gas turbine blade is mechanically deformed at elevated temperature to improve the yield strength of a portion which is used at temperatures below 800/sup 0/ C., compared to a portion which is used at a higher temperature. A blade has a root which is deformed by 2-14% at 700/sup 0/-1100/sup 0/ C. and an airfoil which is not deformed. The root yield strength is increased 15-50% while the airfoil creep strength is maintained.

  4. Dislocation structure of Ge crystals grown by low thermal gradient Czochralski technique

    Science.gov (United States)

    Trukhanov, E. M.; Fritzler, K. B.; Vasilenko, A. P.; Kolesnikov, A. V.; Kasimkin, P. V.; Moskovskih, V. A.

    2017-06-01

    Dislocation structure of the Ge single crystals grown by Czochralski method with low thermal gradient has been studied. The selective etching technique and the X-Ray transmission and reflection topography were used. Clearly defined non-uniform dislocation distribution over the crystal cross - section is revealed. Helical dislocations and sets of prismatic dislocation loops are registered. Helical dislocations perpendicular to the ingot axis are situated near the boundary between the regions with low and high dislocation densities (102 and 103 cm-2, respectively). Their length can be as much as several millimeters. Dislocation formations lying at a 35.3° to the crystal axis along directions are also observed. These formations have the shape of prism confined by {111} planes.

  5. Vertical gradient freeze of 4 inch Ge crystals in a heater-magnet module

    Science.gov (United States)

    Frank-Rotsch, Ch.; Rudolph, P.

    2009-04-01

    For the first time 4-in. Ge single crystals were grown using the vertical gradient freeze technique (VGF) in a traveling magnetic field (TMF) generated in a heater-magnet module (HMM). The HMM was placed closely around the growth container inside the chamber of the industrial Bridgman equipment "Kronos". The HMM generates heat and a TMF together. It has a coil-shaped design and replaces the standard meander-type heater. Direct current (DC) for heat production and out-of-phase-accelerated currents (AC) for TMF generation were simultaneously delivered to three equally spaced coil segments connected by star-type wiring. In order to achieve a nearly flat and slightly convex growing interface the AC amplitude, frequency and phase shift have been optimized numerically by using the 3D CrysMAS code and validated by striation analysis on as-grown crystals. Low-field frequencies in the range f=20-50 Hz proved to be of most suitable condition. TMF programming is required to obtain constant interface morphology over the whole growth run. First Ge single crystals grown under nearly optimal conditions show reduced macro- and micro-inhomogeneities, relatively low dislocation density of (3-10)×10 2 cm -2, and high carrier mobility of μp=2800 cm 2 V -1 s -1.

  6. Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electrical properties

    Science.gov (United States)

    Car, Tihomir; Nekić, Nikolina; Jerčinović, Marko; Salamon, Krešimir; Bogdanović-Radović, Iva; Delač Marion, Ida; Dasović, Jasna; Dražić, Goran; Ivanda, Mile; Bernstorff, Sigrid; Pivac, Branko; Kralj, Marko; Radić, Nikola; Buljan, Maja

    2016-06-01

    In the present work, a method for the low-temperature production of the material consisting of closely packed Ge QDs embedded in ITO matrix is described. The films are produced by magnetron sputtering deposition followed by thermal annealing. It is shown that the conductivity and optical properties of the films depend on the structure, Ge content in the ITO matrix as well as on the annealing conditions. The conductivity of the films changes up to seven orders of magnitude in dependence on the annealing conditions, and it shows transformation from semiconductor to metallic behavior. The optical properties are also strongly affected by the preparation and annealing conditions, so both conductivity and optical properties can be controllably manipulated. In addition, the crystallization of Ge is found to occur already at 300 °C, which is significantly lower than the crystallization temperature of Ge produced by the same method in silica and alumina matrices.

  7. Radiation from 170 GeV electrons and positrons traversing thin Si and Ge crystals near the <110> axis

    Energy Technology Data Exchange (ETDEWEB)

    Bak, J.F.; Moeller, S.P.; Petersen, J.B.B.; Soerensen, A.H.; Uggerhoej, E.; Barberis, D.; Elsener, K.; Brodbeck, T.J.; Newton, D.; Wilson, G.W.

    1988-10-20

    The first results from a broad angular beam experiment on emission of high-energy photons from 170 GeV electrons and positrons are presented. The targets were 0.5 mm thick Si and Ge crystals. A dramatic enhancement in the emitted radiation is found for angles of incidence close to the <110> axis. The experimental results are compared to a constant-field cascade calculation.

  8. Additive manufacturing of micrometric crystallization vessels and single crystals

    Science.gov (United States)

    Halevi, Oded; Jiang, Hui; Kloc, Christian; Magdassi, Shlomo

    2016-11-01

    We present an all-additive manufacturing method that is performed at mild conditions, for the formation of organic single crystals at specific locations, without any photolithography prefabrication process. The method is composed of two steps; inkjet printing of a confinement frame, composed of a water soluble electrolyte. Then, an organic semiconductor solution is printed within the confinement to form a nucleus at a specific location, followed by additional printing, which led to the growth of a single crystal. The specific geometry of the confinement enables control of the specific locations of the single crystals, while separating the nucleation and crystal growth processes. By this method, we printed single crystals of perylene, which are suitable for the formation of OFETs. Moreover, since this method is based on a simple and controllable wet deposition process, it enables formation of arrays of single crystals at specific locations, which is a prerequisite for mass production of active organic elements on flexible substrates.

  9. Optical properties of photonic crystal fiber with integral micron-sized Ge wire.

    Science.gov (United States)

    Tyagi, H K; Schmidt, M A; Prill Sempere, L; Russell, P St J

    2008-10-27

    Using a selective hole closure technique, individual hollow channels in silica-air photonic crystal fibers are filled with pure Ge by pumping in molten material at high pressure. The smallest channels filled so far are 600 nm in diameter, which is 10x smaller than in previous work. Electrical conductivity and micro-Raman measurements indicate that the resulting cm-long wires have a high degree of crystallinity. Optical transmission spectra are measured in a sample with a single wire placed adjacent to the core of an endlessly single-mode photonic crystal fiber. This renders the fiber birefringent, as well as causing strongly polarization-dependent transmission losses, with extinction ratios as high as 30 dB in the visible. In the IR, anti-crossings between the glass-core mode and resonances on the high index Ge wire create a series of clear dips in the spectrum transmitted through the fiber. The measurements agree closely with the results of finite-element simulations in which the wavelength dependence of the dielectric constants is taken fully into account. A toy model based on a multilayer structure is used to help interpret the results. Finally, the temperature dependence of the anti-crossing wavelengths is measured, the preliminary results suggesting that the structure might form the basis of a compact optical thermometer. Since Ge provides electrical conductance together with low-loss guidance in the mid-IR, Ge-filled PCF seems likely to lead to new kinds of in-fiber detector and sensor, as well as having potential uses in ultra-low-threshold nonlinear optical devices.

  10. Channeling, volume reflection and gamma emission using 14GeV electrons in bent silicon crystals - Oral presentation

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Brandon [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-23

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  11. Relaxor-PT Single Crystal Piezoelectric Sensors

    OpenAIRE

    Xiaoning Jiang; Jinwook Kim; Kyugrim Kim

    2014-01-01

    Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and futu...

  12. Synthesis, crystal structure, and bonding analysis of the hypoelectronic cubic phase Ca5Pd6Ge6.

    Science.gov (United States)

    Doverbratt, Isa; Ponou, Siméon; Wang, Fei; Lidin, Sven

    2015-09-21

    The title compound, Ca5Pd6Ge6, was obtained during a systematic investigation of the Ca-Pd-Ge ternary phase diagram. The crystal structure was determined and refined from single-crystal X-ray diffraction data. It crystallizes in a new structure variant of the Y4PdGa12-type structure (Im3̅m, a = 8.7764(4) Å) that features an arrangement of vertex-sharing body-centered cubes of calcium, Ca@Ca8, with a hierarchical bcc network, interpenetrating a second (Pd6Ge6) network consisting of Ge2 dumbbells surrounded by Pd in a strongly flattened octahedron with Pd(μ(2)-η(2),η(4)-Ge2)-like motifs. These octahedra are condensed through the Pd to form a 3D open fcc network. Theoretical band structure calculations suggested that the compound is hypoelectronic with predominantly multicenter-type interatomic interactions involving all three elements and essentially a Hume-Rothery-like regime of electronic stabilization. The similar electronegativity between germanium and palladium atoms has a decisive impact on the bonding picture of the system.

  13. Dynamics of metal-induced crystallization of ultrathin Ge films by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Yuanxun; Huang, Shujuan; Shrestha, Santosh; Conibeer, Gavin [School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney 2052 (Australia)

    2015-12-07

    Though Ge crystallization has been widely studied, few works investigate metal-induced crystallization of ultrathin Ge films. For 2 nm Ge films in oxide matrix, crystallization becomes challenging due to easy oxidation and low mobility of Ge atoms. Introducing metal atoms may alleviate these problems, but the functions and the behaviours of metal atoms need to be clarified. This paper investigates the crystallization dynamics of a multilayer structure 1.9 nm Ge/0.5 nm Al/1.5 nm Al{sub 2}O{sub 3} under rapid thermal annealing (RTA). The functions of metal atoms, like effective anti-oxidation, downshifting Raman peaks, and incapability to decrease crystallization temperature, are found and explained. The metal behaviours, such as inter-diffusion and defect generation, are supported with direct evidences, Al-Ge nanobicrystals, and Al cluster in Ge atoms. With these understandings, a two-step RTA process achieves high-quality 2 nm nanocrystal Ge films with Raman peak at 298 cm{sup −1} of FWHM 10.3 cm{sup −1} and atomic smooth interfaces.

  14. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Moeller, S.P.; Uggerhoej, E.; Worm, T.; Kononets, Y.V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z.; Apyan, A.; Avakian, R.O.; Ispirian, K.A.; Taroian, S.P

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  15. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  16. Green laser crystallization of GeSi thin films and dopant activation

    NARCIS (Netherlands)

    Rangarajan, Balaji; Brunets, Ihor; Oesterlin, Peter

    2011-01-01

    Laser-crystallization of amorphous $Ge_{0.85}Si_{0.15}$ films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 $\\mu m^2$) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electr

  17. E/sup +/-e/sup -/ pair creation by 40-150 GeV photons incident near the <110> axis in a germanium crystal

    Energy Technology Data Exchange (ETDEWEB)

    Bak, J.F.; Moeller, S.P.; Petersen, J.B.B.; Soerensen, A.H.; Uggerhoej, E.; Barberis, D.; Elsener, K.; Brodbeck, T.J.; Newton, D.; Wilson, G.W.

    1988-03-17

    Experimental results are presented on the pair production from high-energy photons (40-150 GeV) incident on a 0.5 mm Ge single crystal around the <100> axis. The observed enhancement increases from around 1 at threshold (40 GeV) to 7 at 150 GeV for photons aligned with the axis. Also the angular dependence and the differential e/sup +/e/sup -/ spectra have been studied. For photons aligned with the axis, the results are in good agreement with calculations based on the constant field approximation.

  18. Crystal structure determination of CoGeTe from powder diffraction data

    Energy Technology Data Exchange (ETDEWEB)

    Laufek, F. [Czech Geological Survey, Geologicka 6, 15200 Praha 5 (Czech Republic)], E-mail: laufek@cgu.cz; Navratil, J. [Joint Laboratory of Solid State Chemistry of IMC AS CR and University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic); Plasil, J. [Faculty of Science, Charles University, Albertov 6, 12843 Praha 2 (Czech Republic); Plechacek, T. [Joint Laboratory of Solid State Chemistry of IMC AS CR and University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic)

    2008-07-28

    The crystal structure of cobalt germanium telluride CoGeTe has been determined by direct methods using integrate intensities of conventional X-ray powder diffraction data and subsequently refined with the Rietveld method. The title compound was prepared by heating of stoichiometric amount of Co, Ge and Te in silica glass tube at 670 deg. C. CoGeTe adopts orthorhombic symmetry, space group Pbca with unit cell parameters a = 6.1892(4) A, b = 6.2285(4) A, c = 11.1240(6) A, V = 428.8(1) A{sup 3} and Z = 8. Its crystal structure is formed by [CoGe{sub 3}Te{sub 3}] octahedra sharing both edges and corners. CoGeTe represents a ternary ordered variant of {alpha}-NiAs{sub 2} type structure. An important feature present in CoGeTe is an occurrence of short Co-Co distance across the shared edge of [CoGe{sub 3}Te{sub 3}] octahedra. Differential thermal analysis (DTA) has revealed that CoGeTe melts incongruently at about 725 deg. C; CoGeTe decomposes into GeTe, CoGe and CoTe{sub 2}. Temperature dependence of the electrical conductivity and value of Seebeck coefficient at 300 K are also reported.

  19. Synthesis and structural characterization of a single-crystal to single-crystal transformable coordination polymer.

    Science.gov (United States)

    Tian, Yuyang; Allan, Phoebe K; Renouf, Catherine L; He, Xiang; McCormick, Laura J; Morris, Russell E

    2014-01-28

    A single-crystal to single-crystal transformable coordination polymer compound was hydrothermally synthesized. The structural rearrangement is induced by selecting a ligand that contains both strong and weaker coordinating groups. Both hydrated and dehydrated structures were determined by single crystal X-ray analysis.

  20. Ultratough single crystal boron-doped diamond

    Science.gov (United States)

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  1. Adhesion of single crystals on modified surfaces in crystallization fouling

    Science.gov (United States)

    Mayer, Moriz; Augustin, Wolfgang; Scholl, Stephan

    2012-12-01

    In crystallization fouling it has been observed that during a certain initial phase the fouling is formed by a non-uniform layer consisting of a population of single crystals. These single crystals are frequently formed by inverse soluble salts such as CaCO3. During heterogeneous nucleation and heterogeneous growth an interfacial area between the crystal and the heat transfer surface occurs. The development of this interfacial area is the reason for the adhesion of each single crystal and of all individual crystals, once a uniform layer has been built up. The emerging interfacial area is intrinsic to the heterogeneous nucleation of crystals and can be explained by the thermodynamic principle of the minimum of the Gibbs free energy. In this study CaCO3 crystals were grown heterogeneously on untreated and on modified surfaces inside a flow channel. An untreated stainless steel (AISI 304) surface was used as a reference. Following surface modifications were investigated: enameled and electropolished stainless steel as well as diamond-like-carbon based coatings on stainless steel substrate. The adhesion was measured through a novel measurement technique using a micromanipulator to shear off single crystals from the substrate which was fixed to a spring table inside a SEM.

  2. Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step

    Science.gov (United States)

    Littlejohns, Callum G.; Dominguez Bucio, Thalia; Nedeljkovic, Milos; Wang, Hong; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2016-01-01

    Silicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the ability to form localised areas of single crystal, uniform composition SiGe-on-insulator. Here we present a method of simultaneously growing several areas of SiGe-on-insulator on a single wafer, with the ability to tune the composition of each localised SiGe area, whilst retaining a uniform composition in that area. We use a rapid melt growth technique that comprises of only a single Ge growth step and a single anneal step. This innovative method is key in working towards a fully integrated photonic-electronic platform, enabling the simultaneous growth of multiple compositions of device grade SiGe for electro-absorption optical modulators operating at a range of wavelengths, photodetectors, and bipolar transistors, on the same wafer. This is achieved by modifying the structural design of the SiGe strips, without the need to modify the growth conditions, and by using low cost, low thermal-budget methods.

  3. Isothermal section of the Ag{sub 2}S-PbS-GeS{sub 2} system at 300 K and the crystal structure of Ag{sub 2}PbGeS{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Kogut, Yu. [Department of Inorganic and Physical Chemistry, Volyn State University, 13 Voli Avenue, 43025 Lutsk (Ukraine); Fedorchuk, A. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska St., 79010 Lviv (Ukraine); Zhbankov, O. [Department of Inorganic and Physical Chemistry, Volyn State University, 13 Voli Avenue, 43025 Lutsk (Ukraine); Romanyuk, Ya. [EMPA, Swiss Federal Laboratories for Materials Testing and Research, 8600 Dubendorf (Switzerland); Kityk, I. [Electrical Engineering Department, Czestochowa University of Technology, Al. Armii Krajowej 17/19, 42-200 Czestochowa (Poland); Piskach, L. [Department of Inorganic and Physical Chemistry, Volyn State University, 13 Voli Avenue, 43025 Lutsk (Ukraine); Parasyuk, O., E-mail: oleg@univer.lutsk.ua [Department of Inorganic and Physical Chemistry, Volyn State University, 13 Voli Avenue, 43025 Lutsk (Ukraine)

    2011-03-17

    Research highlights: > The isothermal section of the quasi-ternary system Ag{sub 2}S-PbS-GeS{sub 2} was investigated by X-ray powder diffraction. The phase equilibria between the binary system components and the ternary and the quaternary compounds were identified. > The crystal structure of the quaternary compound Ag{sub 2}PbGeS{sub 4} was investigated by single crystal X-ray diffraction. The compound crystallizes in an own structural type in a non-centrosymmetric space group Ama2 with the lattice parameters a = 1.02390(4) nm, b = 1.02587(5) nm, c = 0.67701(3) nm. - Abstract: The isothermal section of the Ag{sub 2}S-PbS-GeS{sub 2} system at room temperature was investigated by XRD. The existence of two quaternary compounds, Ag{sub 2}PbGeS{sub 4} and Ag{sub 0.5}Pb{sub 1.75}GeS{sub 4}, was confirmed, and the phase equilibria between the binary system components and the ternary and the quaternary compounds were determined. The crystal structure of Ag{sub 2}PbGeS{sub 4} was studied using the single crystal X-ray diffraction. It was established that Ag{sub 2}PbGeS{sub 4} crystallizes in an own structural type in non-centrosymmetric space group Ama2 with the lattice parameters a = 1.02390(4) nm, b = 1.02587(5) nm, c = 0.67701(3) nm.

  4. Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.

  5. Single W Boson Production at s = 189 GeV

    Institute of Scientific and Technical Information of China (English)

    YANG Hai-Jun; CHEN Guo-Ming; YANG Min; XIONG Zhao-Hua; LU Liang; LU Yu-Sheng; CHEN He-Sheng; Martin Pohl; JIN Bing-Nian

    2000-01-01

    Single W boson production is analyzed in a data sample collected by L3 detector at Large Electron Positron Collider in 1998. The integrated luminosity is 176.4pb-1 with center-of-mass energy at s = 189GeV. The signal consists of large missing energy final states with a single energetic lepton or two hadronic jets. The total cross section of single W production is measured to be 0.58±0.13±0.04 pb, in good agreement with standard model prediction. From this measurement, the limits on the anomalous γWW triple-gauge-boson couplings are derived at 95% confidence level: -0.48<△kr<0.38 and -0.50 <λγ<0.41 .

  6. Crystal growth and structural analysis of zirconium sulphoselenide single crystals

    Indian Academy of Sciences (India)

    K R Patel; R D Vaidya; M S Dave; S G Patel

    2008-08-01

    A series of zirconium sulphoselenide (ZrSSe3–, where = 0, 0.5, 1, 1.5, 2, 2.5, 3) single crystals have been grown by chemical vapour transport technique using iodine as a transporting agent. The optimum condition for the growth of these crystals is given. The stoichiometry of the grown crystals were confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and the structural characterization was accomplished by X-ray diffraction (XRD) studies. The crystals are found to possess monoclinic structure. The lattice parameters, volume, particle size and X-ray density have been carried out for these crystals. The effect of sulphur proportion on the lattice parameter, unit cell volume and X-ray density in the series of ZrSSe3– single crystals have been studied and found to decrease in all these parameters with rise in sulphur proportion. The grown crystals were examined under optical zoom microscope for their surface topography study. Hall effect measurements were carried out on grown crystals at room temperature. The negative value of Hall coefficient implies that these crystals are -type in nature. The conductivity is found to decrease with increase of sulphur content in the ZrSSe3– series. The electrical resistivity parallel to c-axis as well as perpendicular to -axis have been carried out in the temperature range 303–423 K. The results obtained are discussed in detail.

  7. Relaxor-PT Single Crystal Piezoelectric Sensors

    Directory of Open Access Journals (Sweden)

    Xiaoning Jiang

    2014-07-01

    Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.

  8. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

    Science.gov (United States)

    Yuan, Hao-Chih; Shin, Jonghyun; Qin, Guoxuan; Sun, Lei; Bhattacharya, Pallab; Lagally, Max G.; Celler, George K.; Ma, Zhenqiang

    2009-01-01

    This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge) membranes. Ge membranes of 250nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-μm-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10μm exhibit an external quantum efficiency that varies from 5% at 411nm to 42% at 633nm under -1V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.

  9. Defect free single crystal thin layer

    KAUST Repository

    Elafandy, Rami Tarek Mahmoud

    2016-01-28

    A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

  10. Spray printing of organic semiconducting single crystals.

    Science.gov (United States)

    Rigas, Grigorios-Panagiotis; Payne, Marcia M; Anthony, John E; Horton, Peter N; Castro, Fernando A; Shkunov, Maxim

    2016-11-22

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

  11. Spray printing of organic semiconducting single crystals

    Science.gov (United States)

    Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

    2016-11-01

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

  12. Neutron forward diffraction by single crystal prisms

    Indian Academy of Sciences (India)

    Sohrab Abbas; Apoorva G Wagh; Markus Strobl; Wolfgang Treimer

    2008-11-01

    We have derived analytic expressions for the deflection as well as transmitted fraction of monochromatic neutrons forward diffracted by a single crystal prism. In the vicinity of a Bragg reflection, the neutron deflection deviates sharply from that for an amorphous prism, exhibiting three orders of magnitude greater sensitivity to the incidence angle. We have measured the variation of neutron deflection and transmission across a Bragg reflection, for several single crystal prisms. The results agree well with theory.

  13. Na2TiGeO5: Crystal structure stability at low temperature and high pressure

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2008-01-01

    and GeO4 tetrahedra, alternating with layers of Na+ cations. Antiparallel alignment of the short apical titanyl bond in adjacent rows of the polyhedral layer gives rise to spontaneous strain, when a distortion of the TiO5 groups occurs. Single-crystal structures determined at room temperature and 120 K......-axis. The structure distortion, however, is too small to allow any unambiguous determination of the symmetry-breaking effects. The bulk modulus and its pressure derivative have been determined as B-0 = 89(2) GPa and B'(0) = 4.0. A pressure-induced phase transformation takes place at P-c approximate to 12.5 GPa......, presumably to an orthorhombic structure. The pressure effect on the transition temperature is given by Delta T-c/Delta P approximate to 1.76 K/GPa....

  14. Electrically Anisotropic Layered Perovskite Single Crystal

    KAUST Repository

    Li, Ting-You

    2016-04-01

    Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

  15. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  16. Zeeman nuclear quadrupole resonance study of a germanium tetrachloride single crystal

    Science.gov (United States)

    Sengupta, S.; Litzistorf, G.; Lucken, E. A. C.

    Zeeman studies of a single crystal of GeCl 4 have been carried out on a previously described pulsed FT NQR spectrometer. The technique for growing single crystals from liquid samples is described. The Zeeman-split spectrum for each of the resonances at μ1 = 25.4493, μ2 = 25.7133, μ3 = 25.7354, and μ4 = 25.7457 MHz reveals four quadruplets. The asymmetry parameters found lie in two groups of average values η = 0.035 and η = 0.078, much lower than the previously reported value of η = 0.35 obtained from a polycrystalline sample. The crystal of GeCl 4 is found to be orthorhombic with mmm or D2 h symmetry. From the directions of the field gradient axes the interbond angles have been calculated and show that the GeCl 4 molecule is a slightly distorted tetrahedron.

  17. Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals

    CERN Document Server

    Apyan, A; Badelek, B; Ballestrero, S; Biino, C; Birol, I; Cenci, P; Connell, S H; Eichblatt, S; Fonseca, T; Freund, A; Gorini, B; Groess, R; Ispirian, K; Ketel, T; Kononets, Y V; López, A; Mangiarotti, A; Van Rens, B; Sellschop, J P Friedel; Shieh, M; Sona, P; Strakhovenko, V M; Uggerhøj, Erik; Uggerhøj, U; Ünel, G; Velasco, M; Vilakazi, Z Z; Wessely, O; Kononets, Yu.V.

    2005-01-01

    The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...

  18. ZnGeP sub 2 crystals for infrared laser radiation frequency conversion

    CERN Document Server

    Andreev, Y M; Gribenyukov, A I; Korotkova, V V

    1998-01-01

    In this parer, we present some recent results on integrated studies concerned with different aspects of ZnGeP sub 2 crystal technology: synthesis, growth, and post-growth treatment. High-yield two-temperature synthesis and subsequent growth of ZnGeP sub 2 crystals are considered. By X-Ray phase analysis it has been found that two-temperature synthesis of ZnGeP sub 2 is realized through binary zinc and germanium phosphides formed at the Zn-Ge mixture temperature of about 900 .deg. C and the P pressure of 7 approx 10 atm. Using the heat-balance equation, a ratio of the thermal conductivity in the solid to that in the liquid ZnGeP sub 2 near the melting point has been determined. The value of the determined ratio is K sub l /K sub s approx =2.3. Analysis of the most favored crystallographic directions for ZnGeP sub 2 growth has been performed. These directions are [116], [132] and [102]. Data for optical absorption of the as-grown and the annealed ZnGeP sub 2 crystals are also presented.

  19. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    Energy Technology Data Exchange (ETDEWEB)

    Maeta, Takahiro [Graduate School of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197 (Japan); Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  20. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process

    Energy Technology Data Exchange (ETDEWEB)

    Lepadatu, Ana-Maria [National Institute of Materials Physics (Romania); Stoica, Toma [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich (Germany); Stavarache, Ionel; Teodorescu, Valentin Serban [National Institute of Materials Physics (Romania); Buca, Dan [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich (Germany); Ciurea, Magdalena Lidia, E-mail: ciurea@infim.ro [National Institute of Materials Physics (Romania)

    2013-10-15

    Amorphous Ge/SiO{sub 2} multilayer structures deposited by magnetron sputtering have been annealed at different temperatures between 650 and 800 Degree-Sign C for obtaining Ge nanocrystals in oxide matrix. The properties of the annealed structures were investigated by transmission electron microscopy, Raman spectroscopy, and low temperature photoluminescence. The Ge crystallization is partially achieved at 650 Degree-Sign C and increases with annealing temperature. Insight of the Ge nanocrystal formation was acquired by comparing two annealing procedures, i.e., in a conventional tube furnace and by a rapid thermal annealing. By rapid thermal annealing in comparison to conventional furnace one, the Ge crystallization process is faster than Ge diffusion, resulting in the formation of more compact layers of Ge nanocrystals with 8-9.5-nm size as Raman spectroscopy reveals. These findings are important to improve the annealing efficiency in the nanocrystals formation for a precise control of their sizes and location in oxide matrix and for the possibility to create systems with interacting nanoparticles for charge or excitonic transfer. The infrared photoluminescence of Ge nanocrystals at low temperatures shows strong emission with two sharp peaks at about 1,000 meV.

  1. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  2. Crystal structure of SrGeO3 in the high-pressure perovskite-type phase

    Directory of Open Access Journals (Sweden)

    Akihiko Nakatsuka

    2015-05-01

    Full Text Available Single crystals of the SrGeO3 (strontium germanium trioxide high-pressure phase have been synthesized successfully at 6 GPa and 1223 K. The compound crystallizes with the ideal cubic perovskite-type structure (space group Pm-3m, which consists of a network of corner-linked regular GeO6 octahedra (point-group symmetry m-3m, with the larger Sr atoms located at the centers of cavities in the form of SrO12 cuboctahedra (point-group symmetry m-3m in the network. The degrees of covalencies included in the Sr—O and the Ge—O bonds calculated from bond valences are 20.4 and 48.9%, respectively. Thus, the Ge—O bond of the GeO6 octahedron in the SrGeO3 perovskite has a strong covalency, comparable to those of the Si—O bonds of the SiO4 tetrahedra in silicates with about 50% covalency. The thermal vibrations of the O atoms in the title compound are remarkably suppressed in the directions of the Ge—O bonds. This anisotropy ranks among the largest observed in stoichiometric cubic perovskites.

  3. Nitridogermanate nitrides Sr7[GeN4]N2 and Ca7[GeN4]N2: synthesis employing sodium melts, crystal structure, and density-functional theory calculations.

    Science.gov (United States)

    Junggeburth, Sebastian C; Oeckler, Oliver; Johrendt, Dirk; Schnick, Wolfgang

    2008-12-15

    The alkaline earth nitridogermanate nitrides AE(7)[GeN(4)]N(2) (AE = Ca, Sr) have been synthesized using a Na flux technique in sealed Ta tubes. According to single-crystal X-ray diffraction the isotypic compounds crystallize in space group Pbcn (No. 60) with Z = 4, (Sr(7)[GeN(4)]N(2): a = 1152.6(2), b = 658.66(13), c = 1383.6(3) pm, V = 1050.5(4) x 10(6) pm(3), R1 = 0.049; Ca(7)[GeN(4)]N(2): a = 1082.6(2), b = 619.40(12), c = 1312.1(3) pm, V = 879.8(3) x 10(6) pm(3), R1 = 0.016). Owing to the high N/Ge ratio, the compounds contain discrete N(3-) ions coordinated by six AE(2+) besides discrete [GeN(4)](8-) tetrahedrons. One of the AE(2+) ion is coordinated by only four N(3-) ions, which is rather an unusual low coordination number for Sr(2+). Together with the isolated [GeN(4)](8-) tetrahedrons, these Sr(2+) ions form chains of alternating cation centered edge sharing tetrahedrons. The electronic structure and chemical bonding in Sr(7)[GeN(4)]N(2) has been analyzed employing linear muffin-tin orbital (LMTO) band structure calculations.

  4. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    Science.gov (United States)

    Pezzoli, Fabio; Giorgioni, Anna; Gallacher, Kevin; Isa, Fabio; Biagioni, Paolo; Millar, Ross W.; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Isella, Giovanni; Paul, Douglas J.; Miglio, Leo

    2016-06-01

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  5. Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pezzoli, Fabio, E-mail: fabio.pezzoli@unimib.it; Giorgioni, Anna; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Miglio, Leo [LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Gallacher, Kevin; Millar, Ross W.; Paul, Douglas J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Isa, Fabio [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Biagioni, Paolo [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Isella, Giovanni [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy)

    2016-06-27

    We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO{sub 2} in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

  6. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  7. Neutron detection with single crystal organic scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, N; Newby, J; Hamel, S; Carman, L; Faust, M; Lordi, V; Cherepy, N; Stoeffl, W; Payne, S

    2009-07-15

    Detection of high-energy neutrons in the presence of gamma radiation background utilizes pulse-shape discrimination (PSD) phenomena in organics studied previously only with limited number of materials, mostly liquid scintillators and single crystal stilbene. The current paper presents the results obtained with broader varieties of luminescent organic single crystals. The studies involve experimental tools of crystal growth and material characterization in combination with the advanced computer modeling, with the final goal of better understanding the relevance between the nature of the organic materials and their PSD properties. Special consideration is given to the factors that may diminish or even completely obscure the PSD properties in scintillating crystals. Among such factors are molecular and crystallographic structures that determine exchange coupling and exciton mobility in organic materials and the impurity effect discussed on the examples of trans-stilbene, bibenzyl, 9,10-diphenylanthracene and diphenylacetylene.

  8. Hybrid gold single crystals incorporating amino acids

    CERN Document Server

    Chen, Linfeng; Weber, Eva; Fitch, Andy N; Pokroy, Boaz

    2016-01-01

    Composite hybrid gold crystals are of profound interest in various research areas ranging from materials science to biology. Their importance is due to their unique properties and potential implementation, for example in sensing or in bio-nanomedicine. Here we report on the formation of hybrid organic-metal composites via the incorporation of selected amino acids histidine, aspartic acid, serine, glutamine, alanine, cysteine, and selenocystine into the crystal lattice of single crystals of gold. We used electron microscopy, chemical analysis and high-resolution synchrotron powder X ray diffraction to examine these composites. Crystal shape, as well as atomic concentrations of occluded amino acids and their impact on the crystal structure of gold, were determined. Concentration of the incorporated amino acid was highest for cysteine, followed by serine and aspartic acid. Our results indicate that the incorporation process probably occurs through a complex interaction of their individual functional groups with ...

  9. Phase relations and crystal structures in the system Ta-V-Ge.

    Science.gov (United States)

    Khan, Atta U; Bursik, J; Rogl, P

    2012-05-28

    Phase equilibria have been derived for the isothermal section of the Ta-V-Ge system at 1500 °C (for concentrations phases have been identified within the isothermal section, out of which three were characterized by Rietveld refinement of X-ray powder diffraction data. τ(1)-(Ta(1-x)V(x))(5)Ge(3) (0.21 ≤ x ≤ 0.63) adopts the Mn(5)Si(3)-type and τ(2)-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.02, y = 0.12 was found to be a MgZn(2)-type Laves phase. Detailed transmission electron microscopy (TEM) in several crystallographic directions confirmed lattice parameters and crystal symmetry of this phase and rejected the presence of any superstructure. τ(3)-Ta(9-x+y)V(4+x-y-z)Ge(1+z), x = 0.32, y = 0.51, z = 0.98 crystallizes with the Nb(9)Co(4)Ge-type, whereas the structure of τ(4) is not yet known. Although a MgCu(2)-type cubic Laves phase is not present in the Ta-V binary at this temperature, additions of Ge stabilize this phase in the ternary system: C15-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.04, y = 0.05. V(11)Ge(8) (Cr(11)Ge(8) type) shows a large solubility up to (Ta(x)V(1-x))(11)Ge(8), x = 0.64 at 1500 °C.

  10. Single chirality through crystal grinding

    NARCIS (Netherlands)

    Noorduin, W.L.

    2010-01-01

    The properties of chiral molecules in living organisms can be different for left- and right-handed molecules. Therefore, ways to produce molecules of single handedness are of paramount importance, especially for economical, high yielding processes to synthesize pharmaceutical compounds that must be

  11. The growth of Nd: YAG single crystals

    Directory of Open Access Journals (Sweden)

    ANDREJA VALCIC

    2002-04-01

    Full Text Available Y3Al5O12 doped with 0.8 % wt. Nd (Nd:YAG single crystals were grown by the Czochralski technique under an argon atmosphere. The conditions for growing the Nd: YAG single crystals were calculated by using a combination of Reynolds and Grashof numbers. The critical crystal diameter and the critical rate of rotation were calculated from the hydrodynamics of the melt. The crystal diameter Dc = 1.5 cm remained constant during the crystal growth, while the critical rate of rotation changed from wc = 38 rpm after necking to wc = 13 rpm at the end of the crystal. The value of the rate of crystal growth was experimentally found to be 0.8–1.0 mm/h. According to our previous experiments, it was confirmed that 20 min exposure to conc. H3PO4 at 603 K was suitable for chemical polishing. Also, one-hour exposure to conc. H3PO4 at 493 K was found to be suitable for etching. The lattice parameter a = 1.201 (1 nm was determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  12. First Single-Crystal Mullite Fibers

    Science.gov (United States)

    1997-01-01

    Ceramic-matrix composites strengthened by suitable fiber additions are being developed for high-temperature use, particularly for aerospace applications. New oxide-based fibers, such as mullite, are particularly desirable because of their resistance to high-temperature oxidative environments. Mullite is a candidate material in both fiber and matrix form. The primary objective of this work was to determine the growth characteristics of single-crystal mullite fibers produced by the laser-heated floating zone method. Directionally solidified fibers with nominal mullite compositions of 3Al2O3 2SiO2 were grown by the laser-heated floating zone method at the NASA Lewis Research Center. SEM analysis revealed that the single-crystal fibers grown in this study were strongly faceted and that the facets act as critical flaws, limiting fiber strength. The average fiber tensile strength is 1.15 GPa at room temperature. The mullite fibers exhibit superior strength retention (80 percent of their room temperature tensile strength at 1450 C). Examined by transmission electron microscopy, these mullite single crystals are free of dislocations, low-angle boundaries, and voids. In addition, they show a high degree of oxygen vacancy ordering. High-resolution digital images from an optical microscope furnish evidence of the formation of a liquid-liquid miscibility gap during crystal growth. These images represent the first experimental evidence of liquid immiscibility for these compositions and temperatures. Continuing investigation with controlled seeding of mullite single crystals is planned.

  13. Friction stir welding of single crystal aluminium

    DEFF Research Database (Denmark)

    Fonda, Richard Warren; Wert, John A.; Reynolds, A.P.

    2007-01-01

    Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution of crystallog......Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution...

  14. Radiation piezoelectric effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1977-06-01

    Irradiation with ionizing particles of a germanium single crystal and uniaxial deformation at right-angles to the particle beam produced an electric field and a corresponding emf due to the radiation piezoelectric effect. Measurements were carried out when such a single crystal was irradiated with ..cap alpha.. particles and protons. The piezoelectric emf increased linearly with the compressive stress and the ..cap alpha..-particle flux intensity. The emf depended weakly on the particle energy. The observed effect was due to the anisotropy resulting from uniaxial deformation.

  15. Organometallic halide perovskite single crystals having low deffect density and methods of preparation thereof

    KAUST Repository

    Bakr, Osman M.

    2016-02-18

    The present disclosure presents a method of making a single crystal organometallic halide perovskites, with the formula: AMX3, wherein A is an organic cation, M is selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, and Eu, and X is a halide. The method comprises the use of two reservoirs containing different precursors and allowing the vapor diffusion from one reservoir to the other one. A solar cell comprising said crystal is also disclosed.

  16. Nanoindentation analysis of the pop-in events on SiGe single layer

    Science.gov (United States)

    Lian, Derming

    2013-12-01

    The growth of metastable silicon germanium (Si0.8Ge0.2) thin film on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition has been subjected to residual indentation studies. A nanoindentation system has been applied to analyze SiGe film after different annealing treatments. A number of phenomena have been found for the heteroepitaxial growth of SiGe film at the critical thickness of 350 nm, including single discontinuity (the so-called "pop-in" event) as well as the elastic/plastic contact translation. Atomic force microscopy is employed to investigate the surface impression. Pop-in events in the load-indentation depth curves of 400 and 500 °C and no nano-cracks in the vicinity regions are found. The values of H ranging from 13.13±0.9, 21.66±1.3, 18.52±1.1, 14.47±0.7 GPa and the values of E ranging from 221.8±5.3, 230.7±6.4, 223.5±4.6, 156.7±3.8 GPa, are obtained. The elastic/plastic contact translation of the SiGe film occurs at different annealing conditions, with hf/hmax values in the range of 0.501, 0.392, 0.424, and 0.535 for samples are treated at RT, 400, 500, and 600 °C, respectively. The mechanism responsible for the pop-in event in such crystal structure is due to the interaction of the indenter tip with the pre-existing threading dislocations, since the release of the indentation load is bound to be reflected in the directly compressed volume.

  17. Deflection of 200 GeV/c and 450 GeV/c positively charged particles in a bent germanium crystal

    Science.gov (United States)

    Biino, C.; Clement, M.; Doble, N.; Elsener, K.; Freund, A.; Gatignon, L.; Grafström, P.; Kirsebom, K.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.

    1997-02-01

    Experimental results on high-energy beam deflection by means of a bent germanium crystal are presented. Record deflection efficiencies of 60% have been found for 450 GeV/c protons at small angles. The results obtained with 200 and 450 GeV/c positively charged particles are well described by a classical model, giving confidence in predictions for other crystals and different beam momenta.

  18. Deflection of 200 GeV/c and 450 GeV/c Positively Charged Particles in a Bent Germanium Crystal

    CERN Document Server

    Biino, C; Doble, Niels T; Elsener, K; Freund, A; Gatignon, L; Grafström, P; Kirsebom, K; Mikkelsen, U; Møller, S P; Uggerhøj, Erik; Worm, T

    1997-01-01

    Experimental results on high-energy beam deflection by means of a bent germanium crystal are presented. Record deflection efficiencies of 60% have been found for 450 GeV/c protons at small angles. The results obtained with 200 and 450 GeV/c positively charged particles are well described by a classical model, giving confidence in predictions for other crystals and different beam momenta.

  19. Inkjet printing of single-crystal films

    Science.gov (United States)

    Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

    2011-07-01

    The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. `Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4cm2V-1s-1. This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

  20. Piezoelectricity in Single Crystal of Pentaerythritol Tetranitrate

    Directory of Open Access Journals (Sweden)

    K. Raha

    1991-07-01

    Full Text Available The piezoelectric constants perpendicular to (110 and (001 of single crystal f pentaerythritol tetranitrate (PETN are determined to be (3.2+-0.30x10/sup-13/and (1.5+-0.30x10/sub-13/CN/sub-1/. The charge development on these faces under static loading has been confirmed to be true piezoelectric in origin. The crystal seems to experience a quasi permanent deformation under repeated and successive compression with a very long relaxation time. This gives rise to a unique behaviour of individual crystal of PETN under identical stress condition. Mechanical stress relaxation measurements have also been carried out to provide additional evidence on the uniqueness of the crystal. Dielectric constant of the crystal along the directions perpendicular to (110 and (001 are 3.50+-0.12 and 4.57+-0.17; Young's modulus along the directions are (1.24+- 0.30x10/sub6/g cm/sup-2/ respectively. Single crystals of one cm/sub3/ of PETN develops about 10 V cm/sup-1/ field under a force of 1 kg across (110face.

  1. High Polarization Single Mode Photonic Crystal Microlaser

    Institute of Scientific and Technical Information of China (English)

    CHEN Wei; XING Ming-Xin; ZHOU Wen-Jun; LIU An-Jin; ZHENG Wan-Hua

    2009-01-01

    Generally,dipole mode is a doubly degenerate mode.Theoretical calculations have indicated that the single dipole mode of two-dimensional photonic crystal single point defect cavity shows high polarization property.We present a structure with elongated lattice,which only supports a single y-dipole mode.With this structure we can eliminate the degeneracy,control the lasing action of the cavity and demonstrate the high polarization property of the single dipole mode.In our experiment,the polarization extinction ratio of the y-dipole mode is as high as 51:1.

  2. Microhardness studies of sulfamic acid single crystal

    Science.gov (United States)

    Santhosh Kumar, A.; Joseph, Cyriac; Paulose, Reshmi; R, Rajesh; Joseph, Georgekutty; Louis, Godfrey

    2015-02-01

    Vicker's microhardness study of (100), (010) and (001) faces of a non-linear optical crystal sulfamic acid have been reported. Single crystals of sulfamic acid have been grown by slow evaporation method. The load dependence of the Vickers microhardness of sulfamic acid crystal were investigated and analyzed from the stand point of various theoretical models. Crystal samples in a, b and c-axes exhibit reverse indentation effect which is best described by Meyer's law, Hays-Kendall's approach and proportional specimen resistance (PSR) models. The negative values of load dependent quantities in Hays-Kendall's approach and PSR model suggest that the origin of indentation size effect is associated with the process of relaxation of indentation stresses.

  3. Dynamics of interstitial atoms and vacancies during the crystallization of amorphous Si and Ge films by flash lamp annealing

    Science.gov (United States)

    Matsuo, Naoto; Yoshioka, Naoki; Heya, Akira

    2017-08-01

    We examined the dynamics of interstitial atoms and vacancies in amorphous Si (a-Si) and a-Ge films crystallized by flash lamp annealing in consideration of the self-diffusion coefficients of Si and Ge. We found that the interstitial atoms play an important role in the liquid-phase crystallization (LPC) of a-Si films, whereas the vacancies are more important for the solid-phase crystallization (SPC) of a-Si films along with the LPC and SPC of a-Ge films. For Si, the crystal defect density of the film crystallized by LPC was higher than that of the film crystallized by SPC; the opposite result was achieved for Ge. This phenomenon is considered to be attributed to the existence of interstitial atoms introduced in Si. The thermodynamic calculated results related to the relationship between the point defect and SPC or LPC supported the crystallization mechanism.

  4. Synthesis of monoclinic zinc diphosphide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Mowles, T.A.

    1978-05-01

    Monoclinic zinc diphosphide is a cheap, plentiful, direct-gap semiconductor with an optimum transition energy for solar absorption. Single crystals were grown from the vapor to be evaluated as a new photovoltaic material. Monoclinic and tetragonal crystal formed within evacuated quartz ampules that were charged with zinc and excess phosphorous and heated in a temperature gradient to give phosphorous pressures from 0.07 to 8.5 atmospheres. The monoclinic form melts incongruently near 990/sup 0/C. The tetragonal form is metastable; its growth is enhanced by impurities but retarded by high phosphorous pressures. The mechanism of the synthesis indicates that a tightly-controlled vapor deposition is possible and that high-quality thin films should form at temperatures from 950 to 990/sup 0/C at pressures below 10 atmospheres. By a modification of the technique, sesquizinc phosphide single crystals were grown for comparison.

  5. Recrystallization of deformed single crystals of iridium

    Energy Technology Data Exchange (ETDEWEB)

    Ermakov, A.V.; Klotsman, S.M.; Pushin, V.G.; Timofeev, A.N.; Kaigorodov, V.N.; Panfilov, P.Y.; Yurchenko, L.I.

    1999-12-31

    The X-ray diffractometric method was used to analyze crystalline textures that appear during rolling of pure single-Ir and annealing of the said crystals in ultrahigh vacuum (UHV) at successively elevating temperatures. Observing alteration of the texture of the deformed pure single-Ir after UHV annealing, the primary recrystallization temperature T{sub 1recr} of pure Ir was found not to exceed 670 K (0.25 T{sub m}).

  6. A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

    Science.gov (United States)

    2001-04-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012318 TITLE: A Novel Approach to Obtain GeSbTe -Based High Speed...UNCLASSIFIED Mat. Res. Soc. Symp. Proc. Vol. 674 © 2001 Materials Research Society A Novel Approach to Obtain GeSbTe -Based High Speed Crystallizing...fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering

  7. Ionic conduction of lithium hydride single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Pilipenko, G.I.; Oparin, D.V.; Zhuravlev, N.A.; Gavrilov, F.F.

    1987-09-01

    Using the electrical-conductivity- and NMR-measurement- methods, the ionic-conduction mechanism is established in stoichiometric lithium hydride single crystals. The activation energies of migration of anion- and cation-vacancies and the formation of Schottky-pair defects are determined. They assume that the mechanisms of self-diffusion and conductivity are different in lithium hydride.

  8. Lattice effects in YVO3 single crystal

    NARCIS (Netherlands)

    Marquina, C; Sikora, M; Ibarra, MR; Nugroho, AA; Palstra, TTM

    2005-01-01

    In this paper we report on the lattice effects in the Mott insulator yttrium orthovanadate (YVO3). Linear thermal expansion and magnetostriction experiments have been performed on a single crystal, in the temperature range from 5 K to room temperature. The YVO3 orders antiferromagnetically at T-N =

  9. Antiferromagnetism in chromium alloy single crystals

    DEFF Research Database (Denmark)

    Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.

    1965-01-01

    The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) so...

  10. Growth of single-crystal gallium nitride

    Science.gov (United States)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.

  11. High Field Magnetization of Tb Single Crystals

    DEFF Research Database (Denmark)

    Roeland, L. W.; Cock, G. J.; Lindgård, Per-Anker

    1975-01-01

    The magnetization of Tb single crystals was measured in magnetic fields to 34T along the hard direction at temperature of 1.8, 4.2, 65.5 and 77K, and along with easy direction at 4.2 and 77K. The data are compared with the results of a self-consistent spin wave calculation using a phenomenological...

  12. Crystal structure, microstructure, and thermoelectric properties of GeSb{sub 6}Te{sub 10} prepared by spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Kosuga, Atsuko, E-mail: a-kosuga@21c.osakafu-u.ac.jp [Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai 599-8570 (Japan); Nakai, Kazuki [Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai 599-8570 (Japan); Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531 (Japan); Matsuzawa, Mie; Fujii, Yousuke [Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai 599-8570 (Japan); Funahashi, Ryoji [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, Ikeda 563-8577 (Japan); Tachizawa, Takuya; Kubota, Yoshiki [Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531 (Japan); Kifune, Kouichi [Department of Physical Science, Graduate School of Science, Osaka Prefecture University, Sakai 599-8531 (Japan); Faculty of Engineering, Hiroshima Institute of Technology, Hiroshima 731-5193 (Japan)

    2015-01-05

    Highlights: • Spark plasma sintering effects on GeSb{sub 6}Te{sub 10} properties are described. • Sintered GeSb{sub 6}Te{sub 10} contains homologous GeSb{sub 6}Te{sub 10} and Sb{sub 2}Te{sub 3} tetradymite structures. • Spark plasma sintering causes elemental compositional deviations from GeSb{sub 6}Te{sub 10}. • SPS-consolidated and melt-prepared samples have similar ZT{sub max} values. • Spark plasma sintering significantly changes crystal structure and microstructure. - Abstract: We report the effects of spark plasma sintering (SPS) and subsequent annealing on the crystal structure, microstructure, and thermoelectric properties of polycrystalline GeSb{sub 6}Te{sub 10}. GeSb{sub 6}Te{sub 10} consolidated using SPS consisted of a mixture of GeSb{sub 6}Te{sub 10}-type homologous and Sb{sub 2}Te{sub 3}-type tetradymite structures, whereas the sample prepared by melting had a single homologous structure. SPS produced small amounts of Ge-rich precipitates with a few micrometers in size. Even excluding these precipitates, the elemental compositional deviation from the nominal composition was wider than that for the sample prepared by melting. This implies that SPS promoted atomic diffusion and rearrangement of elements, leading to a substantial change in the crystal structure and elemental distribution of GeSb{sub 6}Te{sub 10}. SPS improved the power factor but also increased the thermal conductivity, as a result of the increased electrical conductivity, yielding a maximum dimensionless figure of merit, ZT{sub max}, of 0.33 at 710 K, which is similar to the value for the sample prepared by melting (0.39 at 710 K)

  13. Synthesis, crystal structure and properties of [(dien)2Mn]Ge2S4 with mixed-valent Ge centers

    Science.gov (United States)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-01

    One new manganese thiogermanate, [(dien)2Mn]Ge2S4 (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P212121 (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å3 and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge2S4]2- anionic chain and a [(dien)2Mn]2+ complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge2S4]2- chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV-vis spectra.

  14. 'Cold' crystallization in nanostructurized 80GeSe2-20Ga2Se3 glass.

    Science.gov (United States)

    Klym, Halyna; Ingram, Adam; Shpotyuk, Oleh; Calvez, Laurent; Petracovschi, Elena; Kulyk, Bohdan; Serkiz, Roman; Szatanik, Roman

    2015-01-01

    'Cold' crystallization in 80GeSe2-20Ga2Se3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga2Se3 and/or GeGa4Se8 phases and prevalent GeSe2 phase extracted mainly at the surface of thermally treated samples with preceding nucleation and void agglomeration in the initial stage of annealing are characteristic features of cold crystallization.

  15. MAGNETORESISTANCE AND HALL EFFECT IN SINGLE CRYSTALS OF ALUMINUM

    Science.gov (United States)

    ALUMINUM, *SINGLE CRYSTALS, CRYSTALS, HALL EFFECT , IMPURITIES, LOW PRESSURE, MAGNETIC FIELDS, MAGNETIC PROPERTIES, PARTICLE TRAJECTORIES, ELECTRICAL RESISTANCE, SOLID STATE PHYSICS, SURFACE PROPERTIES.

  16. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    SUN Bing; CHANG Hu-Dong; LU Li; LIU Hong-Gang; WU De-Xin

    2012-01-01

    Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained.An XRD rocking curve scan of the Ge(111) diffraction peak shovs a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600℃ with a ramp-up rate of 20℃/s and a holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.

  17. Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

    Science.gov (United States)

    Jensen, B. N.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Atherton, H. W.; Clément, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafström, P.; Jeanneret, J. B.; Hage-Ali, M.; Siffert, P.

    1992-08-01

    A 450 GeV proton beam has been bent by various angles from 4 to 14 mrad using planar channeling in a (111) silicon crystal. Detailed investigations of the deflected beam as well as the unbent and scattered particles have been performed. The incident beam had a divergence of about 35 μrad (FWHM). 20% of the protons hitting the crystal front face were found to be initially channeled. The measured bending efficiencies range from 5 to 2% (for increasing deflection angles) are compared to theoretical estimates including surface acceptance and dechanneling in bent silicon crystals.

  18. Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, B.N.; Moeller, S.P.; Uggerhoej, E.; Worm, T. (Inst. for Synchrotron Radiation, Aarhus Univ. (Denmark)); Atherton, H.W.; Clement, M.; Doble, N.; Elsener, K.; Gatignon, L.; Grafstroem, P.; Jeanneret, J.B. (European Organization for Nuclear Research (CERN), Geneva (Switzerland)); Hage-Ali, M.; Siffert, P. (Centre de Recherches Nucleaires, 67 - Strasbourg (France))

    1992-08-01

    A 450 GeV proton beam has been bent by various angles from 4 to 14 mrad using planar channeling in a (111) silicon crystal. Detailed investigations of the deflected beam as well as the unbent and scattered particles have been performed. The incident beam had a divergence of about 35 [mu]rad (FWHM). 20% of the protons hitting the crystal front face were found to be initially channeled. The measured bending efficiencies range from 5 to 2% (for increasing deflection angles) and are compared to theoretical estimates including surface acceptance and dechanneling in bent silicon crystals. (orig.).

  19. Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film

    Science.gov (United States)

    Salvalaglio, Marco; Bergamaschini, Roberto; Backofen, Rainer; Voigt, Axel; Montalenti, Francesco; Miglio, Leo

    2017-01-01

    We simulate the morphological evolution of Ge microcrystals, grown out-of-equilibrium on deeply patterned Si substrates, as resulting from surface diffusion driven by the tendency toward the minimization of the surface energy. In particular, we report three-dimensional phase-field simulations accounting for the realistic surface energy anisotropy of Ge/Si crystals. In Salvalaglio et al. (2015) [10] it has been shown both by experiments and simulations that annealing of closely spaced crystals leads to a coalescence process with the formation of a suspended film. However, this was explained only by considering an isotropic surface energy. Here, we extend such a study by showing first the morphological changes of faceted isolated crystals. Then, the evolution of dense arrays is considered, describing their coalescence along with the evolution of facets. Combined with the previous results without anisotropy in the surface energy, this work allows us to confirm and assess the key features of the coalescence process.

  20. The growth of ruby single crystals

    Directory of Open Access Journals (Sweden)

    ALEKSANDAR GOLUBOVIC

    2005-02-01

    Full Text Available Ruby (Cr:Al2O3 single crystals were grown by the Czochralski technique in an argon atmosphere. The critical crystal diameter dc = 1.0 cm and the critical rate of rotation wc = 20 rpm were calculated by equations of the hydrodynamics of the melt. The rate of crystal growthwas experimentally obtained to be 2.7 mm/h. For chemical polishing, conc. H3PO4 at 593 K for an exposure of 3 hours was determined. Conc. H3PO4 at 523 K for an exposure of 3 h was found to be a suitable etching solution. The lattice parameters a = 0.47627(6 nm and c = 1.301(1 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  1. Biomineralization of nanoscale single crystal hydroxyapatite.

    Science.gov (United States)

    Omokanwaye, Tiffany; Wilson, Otto C; Gugssa, Ayelle; Anderson, Winston

    2015-11-01

    The chemical and physical characteristics of nanocrystalline hydroxyapatite particles which formed during the subcutaneous implantation of crab shell in Sprague-Dawley rats were studied using selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM). The initial SAED characterization evidence indicated the presence of an amorphous calcium phosphate phase. The electron dense nanophase particles which formed in the wound healing zone displayed broad diffuse rings which usually indicate a low crystalline order or amorphous phase. High resolution transmission electron microscopy (HRTEM) revealed that these mineralized regions contained discrete single crystal particles less than 5nm in size. Micrographs taken at successively higher magnifications revealed very small nanoparticles with a hexagonal arrangement of ion channels with characteristic spacing of 0.54nm and 0.23nm. This study revealed that single crystal hydroxyapatite nanoparticles consisting of only a few unit cells formed via a biomineralization directed process. Copyright © 2015 Elsevier B.V. All rights reserved.

  2. Straw man 900-1000 GeV crystal extraction test beam for Fermilab collider operation

    Energy Technology Data Exchange (ETDEWEB)

    Carrigan, R.A. Jr.

    1996-10-01

    A design for a 900-1000 GeV, 100 khz parasitic test beam for use during collider operations has been developed. The beam makes use of two bent crystals, one for extraction and the other one for redirecting the beam in to the present Switchyard beam system. The beam requires only a few modifications in the A0 area and largely uses existing devices. It should be straight-forward to modify one or two beam lines in the fixed target experimental areas to work above 800 GeV. Possibilities for improvements to the design,to operate at higher fluxes are discussed.

  3. Electroluminescence in BaFCl single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Somaiah, K.; Paracchini, C.

    1987-06-01

    A study of electroluminescence in BaFCl single crystals as a function of temperature is reported. At an excitation voltage of 5 kV, electroluminescent intensity, which is feeble at room temperature, is shown to increase with decreasing temperature. The increase is rapid between 250 K and 175 K and levels off as 80 K is approached. A tentative explanation, in the light of x-ray induced luminescence, is offered. (U.K.).

  4. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  5. Biomineralization of nanoscale single crystal hydroxyapatite

    Energy Technology Data Exchange (ETDEWEB)

    Omokanwaye, Tiffany [Catholic University of America, BONE/CRAB Lab, Department of Biomedical Engineering, Washington, DC 20064 (United States); Wilson, Otto C., E-mail: wilsono@cua.edu [Catholic University of America, BONE/CRAB Lab, Department of Biomedical Engineering, Washington, DC 20064 (United States); Gugssa, Ayelle; Anderson, Winston [Howard University, Department of Biology, Washington, DC (United States)

    2015-11-01

    The chemical and physical characteristics of nanocrystalline hydroxyapatite particles which formed during the subcutaneous implantation of crab shell in Sprague–Dawley rats were studied using selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM). The initial SAED characterization evidence indicated the presence of an amorphous calcium phosphate phase. The electron dense nanophase particles which formed in the wound healing zone displayed broad diffuse rings which usually indicate a low crystalline order or amorphous phase. High resolution transmission electron microscopy (HRTEM) revealed that these mineralized regions contained discrete single crystal particles less than 5 nm in size. Micrographs taken at successively higher magnifications revealed very small nanoparticles with a hexagonal arrangement of ion channels with characteristic spacing of 0.54 nm and 0.23 nm. This study revealed that single crystal hydroxyapatite nanoparticles consisting of only a few unit cells formed via a biomineralization directed process. - Highlights: • Nanocrystalline particles were formed during in vivo implantation of crab shell using a rat model. • High resolution TEM revealed that nanoparticles were single crystals and less than 5 nm in size. • The relative distance between spots matches the expected values for hydroxyapatite.

  6. Charge transport in single crystal organic semiconductors

    Science.gov (United States)

    Xie, Wei

    Organic electronics have engendered substantial interest in printable, flexible and large-area applications thanks to their low fabrication cost per unit area, chemical versatility and solution processability. Nevertheless, fundamental understanding of device physics and charge transport in organic semiconductors lag somewhat behind, partially due to ubiquitous defects and impurities in technologically useful organic thin films, formed either by vacuum deposition or solution process. In this context, single-crystalline organic semiconductors, or organic single crystals, have therefore provided the ideal system for transport studies. Organic single crystals are characterized by their high chemical purity and outstanding structural perfection, leading to significantly improved electrical properties compared with their thin-film counterparts. Importantly, the surfaces of the crystals are molecularly flat, an ideal condition for building field-effect transistors (FETs). Progress in organic single crystal FETs (SC-FETs) is tremendous during the past decade. Large mobilities ~ 1 - 10 cm2V-1s-1 have been achieved in several crystals, allowing a wide range of electrical, optical, mechanical, structural, and theoretical studies. Several challenges still remain, however, which are the motivation of this thesis. The first challenge is to delineate the crystal structure/electrical property relationship for development of high-performance organic semiconductors. This thesis demonstrates a full spectrum of studies spanning from chemical synthesis, single crystal structure determination, quantum-chemical calculation, SC-OFET fabrication, electrical measurement, photoelectron spectroscopy characterization and extensive device optimization in a series of new rubrene derivatives, motivated by the fact that rubrene is a benchmark semiconductor with record hole mobility ~ 20 cm2V-1s-1. With successful preservation of beneficial pi-stacking structures, these rubrene derivatives form

  7. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2/floating gate of single layer of Ge QDs in HfO 2/tunnel HfO 2/p-Si wafers. Both Ge and HfO2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10(15) m(-2) is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO2 NCs boundaries, while another part of the Ge atoms is present inside the HfO2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO2, distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  8. A nanoporous two-dimensional polymer by single-crystal-to-single-crystal photopolymerization.

    Science.gov (United States)

    Kissel, Patrick; Murray, Daniel J; Wulftange, William J; Catalano, Vincent J; King, Benjamin T

    2014-09-01

    In contrast to the wide number and variety of available synthetic routes to conventional linear polymers, the synthesis of two-dimensional polymers and unambiguous proof of their structure remains a challenge. Two-dimensional polymers-single-layered polymers that form a tiling network in exactly two dimensions-have potential for use in nanoporous membranes and other applications. Here, we report the preparation of a fluorinated hydrocarbon two-dimensional polymer that can be exfoliated into single sheets, and its characterization by high-resolution single-crystal X-ray diffraction analysis. The procedure involves three steps: preorganization in a lamellar crystal of a rigid monomer bearing three photoreactive arms, photopolymerization of the crystalline monomers by [4 + 4] cycloaddition, and isolation of individual two-dimensional polymer sheets. This polymer is a molecularly thin (~1 nm) material that combines precisely defined monodisperse pores of ~9 Å with a high pore density of 3.3 × 10(13) pores cm(-2). Atomic-resolution single-crystal X-ray structures of the monomer, an intermediate dimer and the final crystalline two-dimensional polymer were obtained and prove the single-crystal-to-single-crystal nature and molecular precision of the two-dimensional photopolymerization.

  9. Ce11Ge3.73(2)In6.27: Solid-state synthesis, crystal structure and site-preference

    Science.gov (United States)

    Jeon, Beom-Yong; Nam, Gnu; Lee, Dong Woo; Min Ok, Kang; You, Tae-Soo

    2016-04-01

    A novel intermetallic compound of Ce11Ge3.73(2)In6.27 has been synthesized through the high-temperature solid-state reaction using Nb-ampoules. A batch of well grown block-/short bar-shaped single-crystals has been obtained, and the crystal structure of the title compound has been characterized by single-crystal X-ray diffraction analyses. Ce11Ge3.73(2)In6.27 adopts the Ho11Ge10-type structure belonging to the tetragonal space group I4/mmm (Z=4, Pearson symbol tI84) with nine crystallographically unique atomic positions in the asymmetric unit. The lattice parameters are a=12.0163(1) Å and c=16.5396(2) Å. The overall crystal structure can simply be depicted as an assembly of three different types of co-facial cationic polyhedra centered by anions, which is further enclosed by the three-dimensional (3-D) cage-like anionic framework. The extra amount of In is observed in one of three isolated anionic sites resulting in introducing the Ge/In-mixed site at the Wyckoff 4e site. This unique site-preference of In substitution for Ge at the 4e site has been enlightened via the atomic size-aspect which was fully supported and rationalized by the site- and bond-energies analyses using tight-binding linear muffin-tin orbital (TB-LMTO) calculations. Energy-dispersive X-ray spectroscopy (EDS), density of states (DOS), crystal orbital Hamilton population (COHP), and electron localization function (ELF) analyses for the title compound are also presented. Magnetic susceptibility measurement proves that an antiferromagnetic ordering of Ce atoms at a low temperature with a paramagnetic Curie temperature of -23.2 K.

  10. Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes

    Science.gov (United States)

    Pilgrim, Neil J.; Ikonic, Zoran; Kelsall, Robert W.

    2013-04-01

    Monte Carlo electronic transport simulations are applied to investigate the influence of the Ge absorber layer on the performance of Ge/Si single photon avalanche diodes. Ge dopant type and concentration control the internal electric field gradients, which directly influence the probabilistic distribution of times from the point of charge photo-generation to that of transmission over the Ge/Si heterojunction. The electric field adjacent to the heterointerface is found to be the dominant factor in achieving rapid transmission, leading to a preference for p-type dopants in the Ge absorber. The contribution to jitter from the Ge layer is estimated and appears relatively independent of bias, though scales near-linearly with layer height.

  11. Nuclear Magnetic Resonance Studies of Tellurium and Antimony Bonding in Crystal Sb2Te3, GeTe, and Ge2Sb2Te5

    Science.gov (United States)

    Bobela, David C.; Taylor, P. Craig

    2008-10-01

    As a starting point in understanding the magnetic resonance data for amorphous Ge2Sb2Te5, the prototypical phase change material, we have used 121Sb and 125Te nuclear magnetic resonance (NMR) to study crystalline Sb2Te3, GeTe, and Ge2Sb2Te5. The frequency space data are affected by a quadrupole (121Sb only) and chemical shift (121Sb and 125Te) interaction, which reflect the bonding asymmetries occurring around each nuclei. The 125Te data indicate there are two distinct Te sites in Sb2Te3 and one Te site in the GeTe, in agreement with the known crystal structures. The Ge2Sb2Te5125Te data are less well-resolved, which is probably a consequence of the random arrangement of Sb/Ge atoms around the Te sites. Despite the lack of resolution, these data do correspond to the spectral positions and breadths observed in Sb2Te3 and GeTe, which suggests that Ge2Sb2Te5 contains similar Te bonding structures. The 121Sb data in Sb2Te3 show that the Sb sites have an approximately axially symmetric bonding environment. The Sb data in Ge2Sb2Te5 reveal that the average bonding structure of Sb is very different from the Sb sites occurring in Sb2Te3.

  12. Structural characterization of SmMn{sub 2}GeO{sub 7} single microcrystals by electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Juarez-Arellano, E.A. [UNAM, Mexico (Mexico). Inst. de Fisica; Univ. de Guadalajara, Centro Universitario de la Cienega, Ocotlan (Mexico); Ochoa, J.M.; Bucio, L.; Reyes-Gasga, J.; Orozco, E. [UNAM, Mexico (Mexico). Inst. de Fisica

    2005-02-01

    Single microcrystals of the new compound samarium dimanganese germanium oxide, SmMn{sub 2}GeO{sub 7}, were grown using the flux method in a double spherical mirror furnace (DSMF). The micrometric crystals were observed and chemically analysed with scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDX). The structural characterization and chemical analysis of these crystals were also carried out using transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM), together with electron-energy-loss spectroscopy (EELS). We found that the new quaternary compound crystallizes in the orthorhombic system with the point group mmm (D{sub 2h}), space group Immm (No. 71) and cell parameters a=8.30(10), b=8.18(10), c=8.22(10) Aa and V=558.76 Aa{sup 3}.

  13. Evolution of the Shape of Detached GeSi Crystals in Microgravity

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. An objective of these experiments is to understand the mechanisms of detached Bridgman growth, a process in which a gap exists between the growing semiconductor crystal and the crucible wall. Crystals grown without wall contact have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus.

  14. Perpetually self-propelling chiral single crystals.

    Science.gov (United States)

    Panda, Manas K; Runčevski, Tomče; Husain, Ahmad; Dinnebier, Robert E; Naumov, Panče

    2015-02-11

    When heated, single crystals of enantiomerically pure D- and L-pyroglutamic acid (PGA) are capable of recurring self-actuation due to rapid release of latent strain during a structural phase transition, while the racemate is mechanically inactive. Contrary to other thermosalient materials, where the effect is accompanied by crystal explosion due to ejection of debris or splintering, the chiral PGA crystals respond to internal strain with unprecedented robustness and can be actuated repeatedly without deterioration. It is demonstrated that this superelasticity is attained due to the low-dimensional hydrogen-bonding network which effectively accrues internal strain to elicit propulsion solely by elastic deformation without disintegration. One of the two polymorphs (β) associated with the thermosalient phase transition undergoes biaxial negative thermal expansion (αa = -54.8(8) × 10(-6) K(-1), αc = -3.62(8) × 10(-6) K(-1)) and exceptionally large uniaxial thermal expansion (αb = 303(1) × 10(-6) K(-1)). This second example of a thermosalient solid with anomalous expansion indicates that the thermosalient effect can be expected for first-order phase transitions in soft crystals devoid of an extended 3D hydrogen-bonding network that undergo strongly anisotropic thermal expansion around the phase transition.

  15. Electrical conductivity of sulfamic acid single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Varughese, G. [Department of Physics, Catholicate College, Pathanamthitta, Kerala (India); Iype, L. [School of Pure and Applied Physics, Mahatma Gandhi Unniversity, Kottayam, Kerala (India); Rajesh, R. [Department of Physics, N S S College, Manjeri, Malappuram, Kerala (India); Joseph, G. [Department of Physics, Sacred Heart College, Thevara, Cochin, Kerala (India); Louis, G. [Department of Physics, Cochin University of Science and Technology, Cochin, Kerala (India); Santhosh Kumar, A.

    2010-08-15

    Single crystals of sulfamic acid have been grown by the method of slow evaporation at constant temperature. DC electrical conductivity was measured in the temperature range 300 - 440 K along a, b and c-axes. Conductivity measurements show slope change near 330 K and 410 K. The slope change observed around 330 K may be attributed as due to a phase transition which has been well supported by the DSC and DTA measurements. Slope change observed around 410 K is attributed as the onset of the thermal decomcoposition as evidenced by TGA curve. TGA studies show the crystal is very stable up to 440 K. Activation energies for the conduction process are calculated for all measured crystallographic directions. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Fiber Bragg Gratings in Small-Core Ge-Doped Photonic Crystal Fibers

    Institute of Scientific and Technical Information of China (English)

    Yiping Wang; Hartmut Bartelt; Wolfgang Ecke; Reinhardt Willsch; Jens Kobelke; Michael Kautz; Sven Brueckner; Manfred Rothhardt

    2008-01-01

    This paper reports fiber Bragg gratings (FBGs) inscribed in a small-core Ge-doped photonic crystal fibers with a UV laser and a Talbot inter-ferometer. The responses of such FBGs to temper-ature, strain, bending, and transverse-loading were systematically investigated. The Bragg wavelength of the FBGs shifts toward longer wavelengths with increasing temperature, tensile strain, and trans-verse-loading. The bending and transverse- loading properties of the FBGs are sensitive to the fiber orientations.

  17. Linear to Circular Polarisation Conversion using Birefringent Properties of Aligned Crystals for Multi-GeV Photons

    CERN Document Server

    Apyan, A; Badelek, B; Ballestrero, S; Biino, C; Birol, I; Cenci, P; Connell, S H; Eichblatt, S; Fonseca, T; Freund, A; Gorini, B; Groess, R; Ispirian, K; Ketel, T; Kononets, Yu V; López, A; Mangiarotti, A; Sellschop, J P Friedel; Shieh, M; Sona, P; Strakhovenko, V M; Uggerhøj, Erik; Uggerhøj, U; Van Rens, B; Velasco, M; Vilakazi, Z Z; Wessely, O; Ünel, G; Kononets, Yu.V.

    2003-01-01

    We present the first experimental results on the use of a thick aligned Si crystal acting as a quarter wave plate to induce a degree of circular polarisation in a high energy linearly polarised photon beam. The linearly polarised photon beam is produced from coherent bremsstrahlung radiation by 178 GeV unpolarised electrons incident on an aligned Si crystal, acting as a radiator. The linear polarisation of the photon beam is characterised by measuring the asymmetry in electron-positron pair production in a Ge crystal, for different crystal orientations. The Ge crystal therefore acts as an analyser. The birefringence phenomenon, which converts the linear polarisation to circular polarisation, is observed by letting the linearly polarised photons beam pass through a thick Si quarter wave plate crystal, and then measuring the asymmetry in electron-positron pair production again for a selection of relative angles between the crystallographic planes of the radiator, analyser and quarter wave plate. The systematics...

  18. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    Science.gov (United States)

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-05-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous-crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

  19. Direct shear of olivine single crystals

    Science.gov (United States)

    Tielke, Jacob A.; Zimmerman, Mark E.; Kohlstedt, David L.

    2016-12-01

    Knowledge of the strengths of the individual dislocation slip systems in olivine is fundamental to understanding the flow behavior and the development of lattice-preferred orientation in olivine-rich rocks. The most direct measurements of the strengths of individual slip systems are from triaxial compression experiments on olivine single crystals. However, such experiments only allow for determination of flow laws for two of the four dominant slip systems in olivine. In order to measure the strengths of the (001)[100] and (100)[001] slip systems independently, we performed deformation experiments on single crystals of San Carlos olivine in a direct shear geometry. Experiments were carried out at temperatures of 1000 ° to 1300 °C, a confining pressure of 300 MPa, shear stresses of 60 to 334 MPa, and resultant shear strain rates of 7.4 × 10-6 to 2.1 × 10-3 s-1. At high-temperature (≥1200 °C) and low-stress (≤200 MPa) conditions, the strain rate of crystals oriented for direct shear on either the (001)[100] or the (100)[001] slip system follows a power law relationship with stress, whereas at lower temperatures and higher stresses, strain rate depends exponentially on stress. The flow laws derived from the mechanical data in this study are consistent with a transition from the operation of a climb-controlled dislocation mechanism during power-law creep to the operation of a glide-controlled dislocation mechanism during exponential creep. In the climb-controlled regime, crystals oriented for shear on the (001)[100] slip system are weaker than crystals orientated for shear on the (100)[001] slip system. In contrast, in the glide-controlled regime the opposite is observed. Extrapolation of flow laws determined for crystals sheared in orientations favorable for slip on these two slip systems to upper mantle conditions reveals that the (001)[100] slip system is weaker at temperatures and stresses that are typical of the asthenospheric mantle, whereas the (100

  20. Fabrication of crystals from single metal atoms.

    Science.gov (United States)

    Barry, Nicolas P E; Pitto-Barry, Anaïs; Sanchez, Ana M; Dove, Andrew P; Procter, Richard J; Soldevila-Barreda, Joan J; Kirby, Nigel; Hands-Portman, Ian; Smith, Corinne J; O'Reilly, Rachel K; Beanland, Richard; Sadler, Peter J

    2014-05-27

    Metal nanocrystals offer new concepts for the design of nanodevices with a range of potential applications. Currently the formation of metal nanocrystals cannot be controlled at the level of individual atoms. Here we describe a new general method for the fabrication of multi-heteroatom-doped graphitic matrices decorated with very small, ångström-sized, three-dimensional (3D)-metal crystals of defined size. We irradiate boron-rich precious-metal-encapsulated self-spreading polymer micelles with electrons and produce, in real time, a doped graphitic support on which individual osmium atoms hop and migrate to form 3D-nanocrystals, as small as 15 Å in diameter, within 1 h. Crystal growth can be observed, quantified and controlled in real time. We also synthesize the first examples of mixed ruthenium-osmium 3D-nanocrystals. This technology not only allows the production of ångström-sized homo- and hetero-crystals, but also provides new experimental insight into the dynamics of nanocrystals and pathways for their assembly from single atoms.

  1. Instrumental neutron activation analysis of an enriched 28Si single-crystal

    CERN Document Server

    DAgostino, G; Giordani, L; Mana, G; Oddone, M

    2013-01-01

    The determination of the Avogadro constant plays a key role in the redefinition of the kilogram in terms of a fundamental constant. The present experiment makes use of a silicon single-crystal highly enriched in 28Si that must have a total impurity mass fraction smaller than a few parts in 109. To verify this requirement, we previously developed a relative analytical method based on neutron activation for the elemental characterization of a sample of the precursor natural silicon crystal WASO 04. The method is now extended to fifty-nine elements and applied to a monoisotopic 28Si single-crystal that was grown to test the achievable enrichment. Since this crystal was likely contaminated, this measurement tested also the detection capabilities of the analysis. The results quantified contaminations by Ge, Ga, As, Tm, Lu, Ta, W and Ir and, for a number of the detectable elements, demonstrated that we can already reach the targeted 1 ng/g detection limit.

  2. Growth and characterization of propyl-para-hydroxybenzoate single crystals

    Indian Academy of Sciences (India)

    N Karunagaran; P Ramasamy; R Perumal Ramasamy

    2014-10-01

    Single crystals of propyl--hydroxybenzoate have been grown by slow evaporation solution technique. The structure of the compound was confirmed by FT–IR, FT–Raman spectroscopy and single crystal X-ray diffraction studies. The crystalline perfection of the grown single crystals has been analysed by high resolution X-ray diffraction measurements. Optical properties of the grown single crystals were studied by UV–Vis NIR spectrum. The luminescence behaviour of the single crystal has been analysed by photoluminescence analysis and found maximum luminescence in the lower wavelength region. A simple interferometric technique was used for measuring birefringence of the crystal. The laser damage threshold of the crystal is 1.3 GW/cm2. The mechanical strength of the grown crystal is measured using Vickers microhardness tester. The dielectric properties have been investigated.

  3. Novel Zn sub 9 -cluster compounds RE sub 2 Zn sub 6 Ge sub 3 (RE: La, Ce, Pr, Nd, Sm, Gd): crystal structure and physical properties

    CERN Document Server

    Grytsiv, A; Berger, S; Hilscher, G; Michor, H; Paul, C; Rogl, P; Daoud-Aladine, A; Keller, L; Roisnel, T; Noel, H

    2003-01-01

    A novel ternary structure type has been determined from single crystals of Ce sub 2 Zn sub 6 Ge sub 3 grown from indium-zinc flux solvent. The Ce sub 2 Zn sub 6 Ge sub 3 type is hexagonal (a = 0.767 69(2) nm; c = 0.411 59(2) nm) with space group P6-bar2m, Z = 1. Isotypic compounds with La, Pr, Nd, Sm and Gd were synthesized by reaction sintering, and their isotypic crystal structures were confirmed from Rietveld refinements. These novel ternaries show metallic behaviour and their ground state depends on the particular rare earth ion. Long-range magnetic order was deduced for the compounds from Ce to Gd, with a maximum transition temperature T sub N approx 29 K for Gd sub 2 Zn sub 6 Ge sub 3. While the compounds with Ce and Pr exhibit a spontaneous magnetic type of order, those with Nd, Sm and Gd are antiferromagnetic. The magnetic structures of Pr sub 2 Zn sub 6 Ge sub 3 and Nd sub 2 Zn sub 6 Ge sub 3 were resolved on the basis of neutron powder diffraction performed at 1.5 K.

  4. The new single crystal diffractometer SC3

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J.; Koch, M.; Keller, P.; Fischer, S.; Thut, R. [Lab. for Neutron Scattering ETH Zurich, Zurich (Switzerland) and Paul Scherrer Institute, Villigen (Switzerland)

    1996-11-01

    Single crystal diffraction is a powerful method for the determination of precise structure parameters, superlattices, stress. Neutron single crystal diffraction gives additionally to X-rays information on magnetic structures, both commensurate and incommensurate, hydrogen positions, hydrogen bonding behavior and accurate bondlengths, e.g. important in cuprates. The method is therefore especially powerful if combined with X-ray diffraction results. The new instrument at SINQ has been designed for inorganic materials and is positioned at a thermal beam tube, pointing on a water scatterer. This scatterer is presently operating with H{sub 2}O at ambient temperature, but a change to another medium at different temperature is possible. The instrument will be equipped with three area detectors, moving at fixed difference in 2{Theta}. each detector may be individually moved around a vertical circle (tilting angle {gamma}), allowing to use not only 4-circle geometry in the temperature range from 1.5 to 380 K, but also any equipment from a dilution refrigerator (7 mK) to a heavy magnet. A high temperature furnace for 4-circle geometry is foreseen as a future option. (author) 6 figs., 1 tab., 7 refs.

  5. Effect of electrical field on crystallization and ferroelectric properties of Ge:Sb:Te films

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio Arciniega, J.J.; Prokhorov, E.; Espinoza Beltran, F.J.; Trapaga Martinez, L.G. [CINVESTAV, Unidad Queretaro (Mexico); Gonzalez-Hernandez, J. [Centro de Investigacion en Materiales Avanzados, S.C. and Laboratorio Nacional de Nanotecnologia, Chihuahua (Mexico)

    2011-11-15

    In this work impedance spectroscopy has been used to investigate of the NaCl type-hexagonal transition in stoichiometric Ge{sub 2}Sb{sub 2}Te{sub 5} and in non-stoichiometric (Ge{sub 24}Sb{sub 15}Te{sub 61}) films. The temperature dependence of capacitance in all films shows an abrupt change (about 4-6 times) at the temperature corresponding to the end of the NaCl type-hexagonal transition. Additional, impedance measurements were carried out in films which have been crystallized with an external DC electric field. Comparing the results in the films crystallized with and without the external electric field, it is observed that in films crystallized with an external electric field, the capacitance increases during the NaCl type-hexagonal transition for about 9-15 times and that the piezoresponse force microscopy measurements have shown ferroelectric domains in the NaCl type phase. External electrical field changes significantly the onset of amorphous-NaCl type crystallization temperature which could be related with an increase in atomic diffusion, promoting the growth of the crystalline phase. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Crystal growth and detector performance of large size high-purity Ge crystals

    CERN Document Server

    Wang, Guojian; Mei, Hao; Mei, Dongming; Irmscher, Klaus; Guan, Yutong; Yang, Gang

    2015-01-01

    High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector was also fabricated from one of the crystals and then evaluated for electrical and spectral performance. Measurements of gamma-ray spectra from Cs-137 and Am-241 sources demonstrate that the detector has excellent energy resolution.

  7. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Isa, F.; Isella, G. [L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Wewior, L.; Fuster, D.; Alén, B. [IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), C/Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Richter, M.; Uccelli, E. [Functional Materials Group, IBM Research-Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Niedermann, P.; Neels, A.; Dommann, A. [Centre Suisse d' Electronique et Microtechnique, Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Mancarella, F. [CNR-IMM of Bologna, Via Gobetti 101, I-40129 Bologna (Italy)

    2014-01-13

    We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

  8. Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

    CERN Document Server

    Bezchastnov, Victor G; Solovyov, Andrey V

    2015-01-01

    A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation from multi-GeV electrons and positrons channeling through the crystal. Benchmark theoretical results on the undulator are obtained by simulations of the channeling with a full atomistic approach to the projectile-crystal interactions over the macroscopic propagation distances. The simulations are facilitated by employing the MBN Explorer package for molecular dynamics calculations on the meso- bio- and nano-scales. The radiation from the ultra-relativistic channeling projectiles is computed within the quasi-classical formalism. The effects due to the quantum recoil are shown to be significantly prominent in the gamma-ray undulator radiation.

  9. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  10. Growth of single crystals of BaFe12O19 by solid state crystal growth

    Science.gov (United States)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-10-01

    Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

  11. Load Relaxation of Olivine Single Crystals

    Science.gov (United States)

    Cooper, R. F.; Stone, D. S.; Plookphol, T.

    2016-12-01

    Single crystals of ferromagnesian olivine (San Carlos, AZ, peridot; Fo90-92) have been deformed in both uniaxial creep and load relaxation under conditions of ambient pressure, T = 1500ºC and pO2 = 10-10 atm; creep stresses were in the range 40 ≤ σ1 (MPa) ≤ 220. The crystals were oriented such that the applied stress was parallel to [011]c, which promotes single slip on the slowest slip system in olivine, (010)[001]. The creep rates at steady state match well the results of earlier investigators, as does the stress sensitivity (a power-law exponent of n = 3.6). Dislocation microstructures, including spatial distribution of low-angle (subgrain) boundaries, additionally confirm previous investigations. Inverted primary creep (an accelerating strain rate with an increase in stress) was observed. Load-relaxation, however, produced a singular response—a single hardness curve—regardless of the magnitude of creep stress or total accumulated strain preceding relaxation. The log-stress v. log-strain rate data from load-relaxation and creep experiments overlap to within experimental error. The load-relaxation behavior is distinctly different that that described for other crystalline solids, where the flow stress is affected strongly by work hardening such that a family of distinct hardness curves is generated, which are related by a scaling function. The response of olivine for the conditions studied, thus, indicates flow that is rate-limited by dislocation glide, reflecting specifically a high intrinsic lattice resistance (Peierls stress).

  12. Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization

    Science.gov (United States)

    Lindorf, M.; Rohrmann, H.; Span, G.; Raoux, S.; Jordan-Sweet, J.; Albrecht, M.

    2016-11-01

    While the process of metal induced crystallization (MIC) is widely used in the fabrication of thin film electronic devices, its application to the field of thermoelectrics is fairly new. Especially, its implementation in the field of the classic thermoelectric material SiGe could lead to a low cost approach by combining the benefits of low thermal budget, self-doping, and thin film and sputter deposition compatibility. In this work, samples consisting of SiGe/Al multilayers deposited on aluminum oxide based substrates have been prepared. Special emphasis was put on the ratio of Al to SiGe and the resulting changes in transport properties during annealing. On one hand, a certain amount of Al is needed to ensure a complete MIC process for the SiGe, but on the other hand, an excess of Al results in a metallic system with low thermoelectric efficiency. In-situ characterization during annealing of the samples was carried out via x-ray diffraction, electrical resistivity, and Seebeck measurements.

  13. Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Sadoh, T., E-mail: sadoh@ed.kyushu-u.ac.jp [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Kurosawa, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Toko, K.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2014-04-30

    In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (≤ 5 μm). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 μm. For intermediate growth-distance (5–150 μm), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (≥ 150 μm), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 μm is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge. - Highlights: • Coalesced regions of growth-fronts in melting-grown Ge-on-insulator are investigated. • Lattice planes of growth-fronts coherently align. • The coherent alignment is attributed to atomic reordering in coalesced regions. • Here, coalescence occurs at high temperatures around solidification point of Ge. • This high-quality demonstrates significant advantage of melting growth.

  14. Three new chalcohalides, Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2}: Syntheses, crystal structures, band gaps, and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Lin, Zheshuai [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yao, Jiyong, E-mail: jyao@mail.ipc.ac.cn [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Yicheng [Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-25

    Highlights: • Three new chalcohalides: Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have been synthesized. • The MQ{sub 5}Br octahedra and GeQ{sub 4} tetrahedra form a three-dimensional framework with Ba{sup 2+} in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns{sup 2} lone pair electron. The MQ{sub 5}Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ{sub 4} (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba{sup 2+} cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba{sub 4}Ge{sub 2}PbS{sub 8}Br{sub 2}, Ba{sub 4}Ge{sub 2}PbSe{sub 8}Br{sub 2} and Ba{sub 4}Ge{sub 2}SnS{sub 8}Br{sub 2} have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)

  15. Vibration-assisted machining of single crystal

    Science.gov (United States)

    Zahedi, S. A.; Roy, A.; Silberschmidt, V. V.

    2013-07-01

    Vibration-assisted machining offers a solution to expanding needs for improved machining, especially where accuracy and precision are of importance, such as in micromachining of single crystals of metals and alloys. Crystallographic anisotropy plays a crucial role in determining on overall response to machining. In this study, we intend to address the matter of ultra-precision machining of material at the micron scale using computational modelling. A hybrid modelling approach is implemented that combines two discrete schemes: smoothed particle hydrodynamics and continuum finite elements. The model is implemented in a commercial software ABAQUS/Explicit employing a user-defined subroutine (VUMAT) and used to elucidate the effect of crystallographic anisotropy on a response of face centred cubic (f.c.c.) metals to machining.

  16. Method of Making Lightweight, Single Crystal Mirror

    Science.gov (United States)

    Bly, Vincent T. (Inventor)

    2015-01-01

    A method of making a mirror from a single crystal blank may include fine grinding top and bottom surfaces of the blank to be parallel. The blank may then be heat treated to near its melting temperature. An optical surface may be created on an optical side of the blank. A protector may be bonded to the optical surface. With the protector in place, the blank may be light weighted by grinding a non-optical surface of the blank using computer controlled grinding. The light weighting may include creating a structure having a substantially minimum mass necessary to maintain distortion of the mirror within a preset limit. A damaged layer of the non-optical surface caused by light weighting may be removed with an isotropic etch and/or repaired by heat treatment. If an oxide layer is present, the entire blank may then be etched using, for example, hydrofluoric acid. A reflecting coating may be deposited on the optical surface.

  17. Piezoresistance measurement on single crystal silicon nanowires

    Science.gov (United States)

    Toriyama, Toshiyuki; Funai, Daisuke; Sugiyama, Susumu

    2003-01-01

    A p-type single crystal silicon nanowire bridge and a four-terminal nanowire element were fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The longitudinal piezoresistance coefficient πl[110] was found to be 38.7×10-11 Pa-1 at a surface impurity concentration of Ns=9×1019cm-3 for the nanowire bridge. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at Ns=9×1019 cm-3 for the four-terminal nanowire element. These values are 54.8% larger than the values obtained from p+ diffused piezoresistors, which are used in conventional mechanical sensors.

  18. Synthesis of self-assembled Ge nano crystals employing reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez H, A. [Universidad Autonoma del Estado de Hidalgo, Escuela Superior de Apan, Calle Ejido de Chimalpa Tlalayote s/n, Col. Chimalpa, Apan, Hidalgo (Mexico); Hernandez H, L. A. [IPN, Escuela Superior de Fisica y Matematicas, San Pedro Zacatenco, 07730 Ciudad de Mexico (Mexico); Monroy, B. M.; Santana R, G. [UNAM, Instituto de Investigaciones en Materiales, Apdo. Postal 70-360, 04510 Ciudad de Mexico (Mexico); Santoyo S, J.; Gallardo H, S. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14740, 07300 Ciudad de Mexico (Mexico); Marquez H, A. [Universidad de Guanajuato, Campus Irapuato-Salamanca, Departamento de Ingenieria Agricola, Km. 9 Carretera Irapuato-Silao, 36500 Irapuato, Guanajuato (Mexico); Mani G, P. G.; Melendez L, M. [Universidad Autonoma de Ciudad Juarez, Instituto de Ingenieria y Tecnologia, Departamento de Fisica y Matematicas, 32310 Ciudad Juarez, Chihuahua (Mexico)

    2016-11-01

    This work presents the results of a simple methodology able to control crystal size, dispersion and spatial distribution of germanium nano crystals (Ge-NCs). It takes advantage of a self-assembled process taken place during the deposit of the system SiO{sub 2}/Ge/SiO{sub 2} by reactive RF sputtering. Nanoparticles formation is controlled mainly by the roughness of the first SiO{sub 2} layer buy the ulterior interaction of the interlayer with the top layer also play a role. Structural quality of germanium nano crystals increases with roughness and the interlayer thickness. The tetragonal phase of germanium is produced and its crystallographic quality improves with interlayer thickness and oxygen partial pressure. Room temperature photoluminescence emission without a post growth thermal annealing process indicates that our methodology produces a low density of non-radiative traps. The surface topography of SiO{sub 2} reference samples was carried out by atomic force microscopy. The crystallographic properties of the samples were studied by grazing incidence X-ray diffraction at 1.5 degrees carried out in a Siemens D-5000 system employing the Cu Kα wavelength. (Author)

  19. Stimulated crystallization of melt-quenched Ge{sub 2}Sb{sub 2}Te{sub 5} films employing femtosecond laser double pulses

    Energy Technology Data Exchange (ETDEWEB)

    Cotton, Rebecca L.; Siegel, Jan [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)

    2012-12-15

    The phase transformation of Ge{sub 2}Sb{sub 2}Te{sub 5} films from the melt-quenched amorphous phase into the crystalline phase induced by 800 nm, 100 fs laser pulses has been studied. For partly amorphized films, progressive crystallization could be induced by single pulses, which can be explained by growth of already existing crystalline embryos. For completely amorphized films, it was not possible to induce crystallization with one or two consecutive pulses; three pulses being the threshold for the onset of crystallization. By employing a fs laser double pulse with an adjustable inter-pulse delay, partial crystallization could be triggered for a delay range of 200 fs-100 ps, while for longer delays no crystallization was possible. The time window for stimulated crystallization can be related to the relaxation dynamics of free electrons excited by the first pulse, which are further excited by the second pulse still remaining in the excited state. Our results indicate that the lifetime of excited electrons in melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} is Almost-Equal-To 100 ps.

  20. Development of novel growth methods for halide single crystals

    Science.gov (United States)

    Yokota, Yuui; Kurosawa, Shunsuke; Shoji, Yasuhiro; Ohashi, Yuji; Kamada, Kei; Yoshikawa, Akira

    2017-03-01

    We developed novel growth methods for halide scintillator single crystals with hygroscopic nature, Halide micro-pulling-down [H-μ-PD] method and Halide Vertical Bridgman [H-VB] method. The H-μ-PD method with a removable chamber system can grow a single crystal of halide scintillator material with hygroscopicity at faster growth rate than the conventional methods. On the other hand, the H-VB method can grow a large bulk single crystal of halide scintillator without a quartz ampule. CeCl3, LaBr3, Ce:LaBr3 and Eu:SrI2 fiber single crystals could be grown by the H-μ-PD method and Eu:SrI2 bulk single crystals of 1 and 1.5 inch in diameter could be grown by the H-VB method. The grown fiber and bulk single crystals showed comparable scintillation properties to the previous reports using the conventional methods.

  1. Piezoelectric single crystals for ultrasonic transducers in biomedical applications

    Science.gov (United States)

    Zhou, Qifa; Lam, Kwok Ho; Zheng, Hairong; Qiu, Weibao; Shung, K. Kirk

    2014-01-01

    Piezoelectric single crystals, which have excellent piezoelectric properties, have extensively been employed for various sensors and actuators applications. In this paper, the state–of–art in piezoelectric single crystals for ultrasonic transducer applications is reviewed. Firstly, the basic principles and design considerations of piezoelectric ultrasonic transducers will be addressed. Then, the popular piezoelectric single crystals used for ultrasonic transducer applications, including LiNbO3 (LN), PMN–PT and PIN–PMN–PT, will be introduced. After describing the preparation and performance of the single crystals, the recent development of both the single–element and array transducers fabricated using the single crystals will be presented. Finally, various biomedical applications including eye imaging, intravascular imaging, blood flow measurement, photoacoustic imaging, and microbeam applications of the single crystal transducers will be discussed. PMID:25386032

  2. Single and multi-photon events with missing energy in $e^+ e^-$ collisions at 161 GeV < $\\sqrt{s}$ < 172 GeV

    CERN Document Server

    Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Banerjee, S; Banerjee, Sw; Banicz, K; Barczyk, A; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Boldizsar, L; Borgia, B; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Button, A M; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chang, Y H; Chaturvedi, U K; Chekanov, S V; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; Degré, A; Deiters, K; Della Volpe, D; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dova, M T; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Fisk, I; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hong, S J; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Jenkes, K; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamrad, D; Kamyshkov, Yu A; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, D H; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Kopp, A; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangeol, D J J; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Muijs, A J M; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Niessen, T; Nippe, A; Nisati, A; Nowak, H; Oh, Yu D; Opitz, H; Organtini, G; Ostonen, R; Palomares, C; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Park, I H; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petersen, B; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Raja, N; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riles, K; Robohm, A; Rodin, J; Roe, B P; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Ruschmeier, D; Rykaczewski, H; Salicio, J; Sánchez, E; Sanders, M P; Sarakinos, M E; Sarkar, S; Sassowsky, M; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, A; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Uchida, Y; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Ziegler, F

    1997-01-01

    A search for single and multi-photon events with missing energy is performed using data collected at centre-of-mass energies between 161 GeV and 172 GeV for a total of 20.9 pb$^{-1}$ of integrated luminosity. The results obtained are used to derive the value for the $\

  3. Single crystal growth and anisotropic crystal-fluid interface tension in soft colloidal systems

    NARCIS (Netherlands)

    Nguyen, V.D.; Hu, Z.; Schall, P.

    2011-01-01

    We measure the anisotropy of the crystal-fluid interfacial free energy in soft colloidal systems. A temperature gradient is used to direct crystal nucleation and control the growth of large single crystals in order to achieve well-equilibrated crystal-fluid interfaces. Confocal microscopy is used to

  4. Functionalizing single crystals: incorporation of nanoparticles inside gel-grown calcite crystals.

    Science.gov (United States)

    Liu, Yujing; Yuan, Wentao; Shi, Ye; Chen, Xiaoqiang; Wang, Yong; Chen, Hongzheng; Li, Hanying

    2014-04-14

    Synthetic single crystals are usually homogeneous solids. Biogenic single crystals, however, can incorporate biomacromolecules and become inhomogeneous solids so that their properties are also extrinsically regulated by the incorporated materials. The discrepancy between the properties of synthetic and biogenic single crystals leads to the idea to modify the internal structure of synthetic crystals to achieve nonintrinsic properties by incorporation of foreign material. Intrinsically colorless and diamagnetic calcite single crystals are turned into colored and paramagnetic solids, through incorporation of Au and Fe3O4 nanoparticles without significantly disrupting the crystalline lattice of calcite. The crystals incorporate the nanoparticles and gel fibers when grown in agarose gel media containing the nanoparticles, whereas the solution-grown crystals do not. As such, our work extends the long-history gel method for crystallization into a platform to functionalize single-crystalline materials.

  5. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Ho; Park, Jin-Hong, E-mail: jhpark9@skku.edu

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  6. Observation of channeling for 6500 GeV/c protons in the crystal assisted collimation setup for LHC

    Science.gov (United States)

    Scandale, W.; Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Losito, R.; Masi, A.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Schoofs, P.; Smirnov, G.; Valentino, G.; Breton, D.; Burmistrov, L.; Chaumat, V.; Dubos, S.; Maalmi, J.; Puill, V.; Stocchi, A.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Dabagov, S.; Murtas, F.; Addesa, F.; Cavoto, G.; Iacoangeli, F.; Ludovici, L.; Santacesaria, R.; Valente, P.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Denisov, A. S.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Lapina, L. P.; Malyarenko, L. G.; Skorobogatov, V. V.; James, T.; Hall, G.; Pesaresi, M.; Raymond, M.

    2016-07-01

    Two high-accuracy goniometers equipped with two bent silicon crystals were installed in the betatron cleaning insertion of the CERN Large Hadron Collider (LHC) during its long shutdown. First beam tests were recently performed at the LHC with 450 GeV/c and 6500 GeV/c stored proton beams to investigate the feasibility of beam halo collimation assisted by bent crystals. For the first time channeling of 6500 GeV/c protons was observed in a particle accelerator. A strong reduction of beam losses due to nuclear inelastic interactions in the aligned crystal in comparison with its amorphous orientation was detected. The loss reduction value was about 24. Thus, the results show that deflection of particles by a bent crystal due to channeling is effective for this record particle energy.

  7. Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

    Energy Technology Data Exchange (ETDEWEB)

    Markevich, V.P., E-mail: V.Markevich@manchester.ac.u [School of Electrical and Electronic Engineering, University of Manchester, Sackville Str. Building, Manchester, M60 1QD (United Kingdom); Peaker, A.R. [School of Electrical and Electronic Engineering, University of Manchester, Sackville Str. Building, Manchester, M60 1QD (United Kingdom); Lastovskii, S.B.; Murin, L.I. [Scientific-Practical Materials Research Center of NAS of Belarus, Minsk 220072 (Belarus); Litvinov, V.V. [Belarusian State University, Minsk 220050 (Belarus); Emtsev, V.V. [Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation); Dobaczewski, L. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

    2009-12-15

    Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300 K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals have also been investigated. It is argued that a radiation-induced electron trap with an energy level at about 110 meV below the conduction band edge (E{sub 110}) can be associated with electron emission from an energy level of the Ge self-interstitial (I{sub Ge}). The E{sub 110} trap is eliminated in the temperature range 150-200 K upon 15 min isochronal annealing. No other traps in the upper half of the gap emerge simultaneously with the disappearance of the E{sub 110} trap. It is argued that Ge self-interstitials become mobile at temperatures higher than 150 K and in oxygen-rich Ge interact with interstitial oxygen atoms (O{sub i}). The resulting I{sub Ge}O{sub i} complexes do not have energy levels in the upper half of the Ge gap. Diffusion and interaction of the I{sub Ge}O{sub i} defects with interstitial oxygen atoms at T>50 deg. C result in the formation of I{sub Ge}O{sub 2i} complexes. In the most stable configuration the I{sub Ge}O{sub 2i} complex has orthorhombic (C{sub 2v}) symmetry.

  8. Piezoelectric single crystals for ultrasonic transducers in biomedical applications

    OpenAIRE

    Zhou, Qifa; Lam, Kwok Ho; Zheng, Hairong; Qiu, Weibao; Shung, K. Kirk

    2014-01-01

    Piezoelectric single crystals, which have excellent piezoelectric properties, have extensively been employed for various sensors and actuators applications. In this paper, the state–of–art in piezoelectric single crystals for ultrasonic transducer applications is reviewed. Firstly, the basic principles and design considerations of piezoelectric ultrasonic transducers will be addressed. Then, the popular piezoelectric single crystals used for ultrasonic transducer applications, including LiNbO...

  9. Ultraviolet Photoelectric Effect in ZrO2 Single Crystals

    Institute of Scientific and Technical Information of China (English)

    XING Jie; WANG Xu; ZHAO Kun; LI Jie; JIN Kui-Juan; HE Meng; ZHENG Dong-Ning; L(U) Hui-Bin

    2007-01-01

    Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time.The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when the wafer surface of the ZrO2 single crystal is irradiated by 248nm KrF laser pulses. The experimental results show that ZrO2 single crystals may be a potential candidate in UV photodetectors.

  10. Phase equilibria in the La–Mg–Ge system at 500 °C and crystal structure of the new ternary compounds La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    De Negri, S., E-mail: serena.denegri@unige.it [Università degli Studi di Genova, Dipartimento di Chimica e Chimica Industriale, via Dodecaneso 31, 16146 Genova (Italy); Solokha, P.; Skrobańska, M. [Università degli Studi di Genova, Dipartimento di Chimica e Chimica Industriale, via Dodecaneso 31, 16146 Genova (Italy); Proserpio, D.M. [Università degli Studi di Milano, Dipartimento di Chimica, Via Golgi 19, 20133 Milano (Italy); Samara Center for Theoretical Materials Science (SCTMS), Samara State University, Samara 443011 (Russian Federation); Saccone, A. [Università degli Studi di Genova, Dipartimento di Chimica e Chimica Industriale, via Dodecaneso 31, 16146 Genova (Italy)

    2014-10-15

    The whole 500 °C isothermal section of the La–Mg–Ge ternary system was constructed. The existence and crystal structure of three ternary compounds were confirmed: La{sub 2+x}Mg{sub 1−x}Ge{sub 2} (τ{sub 2}, P4/mbm, tP10–Mo{sub 2}FeB{sub 2}, 0≤x≤0.25), La{sub 4}Mg{sub 5}Ge{sub 6} (τ{sub 3}, Cmc2{sub 1}, oS60–Gd{sub 4}Zn{sub 5}Ge{sub 6}) and La{sub 4}Mg{sub 7}Ge{sub 6} (τ{sub 4}, C2/m, mS34, own structure type). Five novel compounds were identified and structurally characterized: La{sub 11}Mg{sub 2}Ge{sub 7} (τ{sub 1}, P4{sub 2}/ncm, tP88-8, own structure type, a=1.21338(5), c=1.57802(6) nm), LaMg{sub 3−x}Ge{sub 2} (τ{sub 5}, P3{sup ¯}1c, hP34-0.44, own structure type, x=0.407(5), a=0.78408(4), c=1.45257(7) nm), La{sub 6}Mg{sub 23}Ge (τ{sub 6}, Fm3{sup ¯}m, cF120–Zr{sub 6}Zn{sub 23}Si, a=1.46694(6) nm), La{sub 4}MgGe{sub 10−x} (τ{sub 7}, x=0.37(1), C2/m, mS60-1.46, own structure type, a=0.88403(8), b=0.86756(8), c=1.7709(2) nm, β=97.16°(1) and La{sub 2}MgGe{sub 6} (τ{sub 8}, Cmce, oS72–Ce{sub 2}(Ga{sub 0.1}Ge{sub 0.9}){sub 7}, a=0.8989(2), b=0.8517(2), c=2.1064(3) nm). Disordering phenomena were revealed in several La–Mg–Ge phases in terms of partially occupied sites. The crystal structures of La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2} are discussed in details. The latter is a √3a×√3a×2c superstructure of the LaLi{sub 3}Sb{sub 2} structure type; the symmetry reduction scheme is shown in the Bärnighausen formalism terms. - Graphical abstract: La–Mg–Ge isothermal section at 500 °C and group–subgroup relation between the LaLi{sub 3}Sb{sub 2} (parent type) and LaMg{sub 3−x}Ge{sub 2} (derivative) structures. - Highlights: • Novel La−Mg−Ge compounds structure determination from X-ray single crystal data. • Disordering phenomena as common features of the studied germanides. • Bärnighausen formalism as a useful tool for accurate structure determination. • Full isothermal section of the La–Mg–Ge

  11. Nanoscale order and crystallization in nitrogen-alloyed amorphous GeTe

    Energy Technology Data Exchange (ETDEWEB)

    Darmawikarta, Kristof; Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Raoux, Simone [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, New York 10598 (United States); Bishop, Stephen G. [Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, Illinois 61801 (United States)

    2014-11-10

    The nanoscale order in amorphous GeTe thin films is measured using fluctuation transmission electron microscopy (FTEM). The order increases upon annealing at 145 °C, which indicates a coarsening of subcritical nuclei. This correlates with a reduction in the nucleation delay time in laser crystallization. A shift in the FTEM peak positions may indicate a transformation in local bonding. In samples alloyed with 12 at. % nitrogen, the order does not change upon annealing, the peak does not shift, and the nucleation time is longer. The FTEM data indicate that nitrogen suppresses the structural evolution necessary for the nucleation process and increases the thermal stability of the material.

  12. Composite single crystal silicon scan mirror substrates Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Single crystal silicon is a desirable mirror substrate for scan mirrors in space telescopes. As diameters of mirrors become larger, existing manufacturing...

  13. Cryogenic Fluid Transfer Components Using Single Crystal Piezoelectric Actuators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Cryogenic fluid transfer components using single crystal piezoelectric actuators are proposed to enable low thermal mass, minimal heat leak, low power consumption...

  14. Cryogenic Fluid Transfer Components Using Single Crystal Piezoelectric Actuators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Cryogenic fluid transfer components using single crystal piezoelectric actuators are proposed to enable low thermal mass, minimal heat leak, low power consumption...

  15. Ultratough CVD single crystal diamond and three dimensional growth thereof

    Science.gov (United States)

    Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  16. Growth morphology and structural characteristic of C70single crystals

    Institute of Scientific and Technical Information of China (English)

    周维亚; 解思深; 吴源; 常保和; 王刚; 钱露茜

    1999-01-01

    Large size C70 single crystals with the dimension of more than 5 mm are grown from the vapor phase by controlling nucleation. X-ray diffraction and electron diffraction confirm that in the C70 single crystal a phase of the hexagonal close-packed (hcp) structure coexists with a minor face-center-cubic (fcc) phase at room temperature. The morphologies and their formation mechanism of the C70 single crystals are investigated by means of scanning electron microscopy and optical microscopy. The influence of growth conditions on the morphologies of C70 single crystals is discussed.

  17. Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1)

    Science.gov (United States)

    Bottegoni, F.; Calloni, A.; Bussetti, G.; Camera, A.; Zucchetti, C.; Finazzi, M.; Duò, L.; Ciccacci, F.

    2016-05-01

    The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the \\overline{\\text{M}} point of the Bi surface Brillouin zone with a giant spin-orbit constant |{α\\text{R}}| =≤ft(1.4+/- 0.1\\right) eV · Å.

  18. Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

    Science.gov (United States)

    Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

    2016-11-10

    A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

  19. Radiation damage of LSO crystals under γ- and 24 GeV protons irradiation

    Science.gov (United States)

    Auffray, E.; Barysevich, A.; Fedorov, A.; Korjik, M.; Koschan, M.; Lucchini, M.; Mechinski, V.; Melcher, C. L.; Voitovich, A.

    2013-09-01

    Irradiation damage of undoped and low Ce doped lutetium oxyorthosilicate has been investigated. Crystals were irradiated with both a 60Co γ-quanta source with an absorbed dose of 2000 Gy and, at CERN PS, a high-rate 24 GeV proton beam with a fluence of ˜3.6×1013 p/cm2. Both irradiations produced a similar set of induced absorption bands. However, a shift of the fundamental absorption spectrum cutoff appears after proton irradiation, but not in the case of the γ-irradiation. The observed shift of the band edge in the transmission spectrum following proton irradiation in lutetium oxyorthosilicate crystals indicates that this phenomenon is a general property of heavy crystalline materials. A possible proton-induced transmission damage mechanism is discussed.

  20. Employing a cylindrical single crystal in gas-surface dynamics

    NARCIS (Netherlands)

    Hahn, C.; Shan, J.; Liu, Y.; Berg, van den O.; Kleijn, A.W.; Juurlink, L.B.F.

    2012-01-01

    We describe the use of a polished, hollow cylindrical nickel single crystal to study effects of step edges on adsorption and desorption of gas phase molecules. The crystal is held in an ultra-high vacuum apparatus by a crystal holder that provides axial rotation about a [100] direction, and a crysta

  1. Hot Corrosion of Coated Single Crystal Superalloys

    Energy Technology Data Exchange (ETDEWEB)

    Simms, N. J.; Encinas-Oropesa, A.; Nicholls, J.R. [Cranfield University, Power Generation Technology Centre, Cranfield, Beds, MK43 0AL (United Kingdom)

    2004-07-01

    Gas turbines are at the heart of many modern power systems, with combined cycle power generation utilising natural gas being an effective way of reducing environmental emissions compared to conventional pulverized coal fired plants. The development of gas turbine technology has been focused on increasing its efficiency. However, the lives of the hot gas path components within these gas turbines are also critical to the viability of the power systems. Single crystal superalloys have been developed for use with clean fuel/air but are now being used in industrial gas turbines that may need to run with dirtier fuel/air. Indeed, gas turbine based power systems are being evaluated in which solid fuels (e.g. coal and/or biomass) are gasified to produce fuel gases, which introduces the potential for significant corrosive and erosive damage to gas turbine blades and vanes. The performance of these materials, with coatings, has to be determined before they can be used with confidence in dirtier fuel environments. This paper reports results from a series of laboratory tests carried out using the 'deposit replenishment' technique to investigate the sensitivity of candidate materials to exposure conditions anticipated in such gas turbines. The materials investigated have included CMSX-4 and SC{sup 2}-B (both bare and with Pt-Al and Amdry 997 coatings) as well as conventional nickel based superalloys such as IN738LC for comparison. The exposure conditions within the laboratory tests have covered ranges of SO{sub x} (50 and 500 vpm) and HCl (0 and 500 vpm) in air, as well as 4/1 (Na/K){sub 2}SO{sub 4} deposits, with deposition fluxes of 1.5, 5 and 15 {mu}g/cm{sup 2}/h, for periods of up to 500 hours at 700 and 900 deg. C. Data on the performance of materials has been obtained using dimensional metrology: pre-exposure contact measurements and post-exposure measurements of features on polished cross-sections. These measurement methods allow distributions of damage data to

  2. Mesoporous zeolite and zeotype single crystals synthesized in fluoride media

    DEFF Research Database (Denmark)

    Egeblad, Kresten; Kustova, Marina; Klitgaard, Søren Kegnæs

    2007-01-01

    We report the synthesis and characterization of a series of new mesoporous zeolite and zeotype materials made available by combining new and improved procedures for directly introducing carbon into reaction mixtures with the fluoride route for conventional zeolite synthesis. The mesoporous...... characterized by XRPD, SEM, TEM and N-2 physisorption measurements. For the zeolite materials it A as found that mesoporous MFI and MEL structured single crystals could indeed be crystallized from fluoride media using an improved carbon-templating approach. More importantly, it was found that mesoporous BEA......-type single crystals could be crystallized from fluoride media by a newly developed procedure presented here. Thus, we here present the only known route to mesoporous BEA-type single crystals, since crystallization of this framework structure from basic media is known to give only nanosized crystals...

  3. Optical characterization of ferroelectric glycinium phosphite single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, R.; Senthil Kumar, K. [Crystal Growth Centre, Anna University, Sardar Patel Road, Chennai, Tamil Nadu 600025 (India); Moorthy Babu, S., E-mail: babu@annauniv.ed [Crystal Growth Centre, Anna University, Sardar Patel Road, Chennai, Tamil Nadu 600025 (India); Bhagavannarayana, G. [Crystal Growth and Crystallography Section, National Physical Laboratory, CSIR, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2010-02-04

    Single crystals of glycinium phosphite (GPI) were grown by isothermal evaporation and conventional temperature-lowering techniques. Single crystal and powder X-ray diffraction analysis confirm the monoclinic structure of the as grown crystals. The structural perfection of the as grown crystal was determined through HRXRD analysis. FTIR and Raman analysis revealed the functional groups present in the grown crystals. The optical absorption of the grown crystal was analyzed and the refractive index values for different wavelengths were measured by prism coupling technique. Thermal stability, melting temperature and phase transition temperature of the as grown crystals were identified from TGA/DSC analysis. The dielectric impedance analysis indicates the continuous phase transition nature of the grown crystals. The mechanical strength and hardening co-efficient were determined from Vicker's microhardness measurements for different loads with constant dwell time. The growth mechanism and the defects were analyzed through chemical etching analysis from various crystallographic planes and etching periods.

  4. Crystal Structure Effects on the Thermal Conductivity of Cu-Ge-Se Compounds

    Science.gov (United States)

    Skoug, Eric; Cain, Jeffrey; Morelli, Donald

    2010-03-01

    One approach to increasing the efficiency of a thermoelectric material is to decrease its thermal conductivity without degrading its electronic properties. Traditionally this has been accomplished, for instance, by forming solid solutions between compounds with similar crystal structures, or, more recently, by inducing nanostructure in the crystal lattice. These methods have proven effective in many cases; however discovering compounds with intrinsically low thermal conductivity provides a fundamental solution to the same problem. Here we describe our initial efforts in synthesis and characterization of compounds of the series Cu2Ge1+xSe3, in which we observe a transition from orthorhombic to cubic symmetry at x = 0.55. The lattice thermal conductivity of the cubic phase is significantly lower than that of the orthorhombic phase, which we discuss here in relation to vacancies and anti-site defects. A simple valence argument is presented suggesting a change in the nominal valence of Ge as x approaches 1.0, which we speculate contributes to increased bond anharmonicity in the cubic-structure compounds.

  5. Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

    2017-10-01

    The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing temperatures is also clearly clarified. It suggests that the bubble density is significantly affected by the crystallinity and thickness of the a-Ge layer. With the increase of the crystallinity and thickness of the a-Ge layer, the bubble density decreases. It is important that a near-bubble-free Ge interface, which is also an oxide-free interface, is achieved when the bonded Si wafers (a-Ge layer thickness  ⩾  20 nm) are annealed at 400 °C. Furthermore, the crystallization temperature of the a-Ge between the bonded Si wafers is lower than that on a Si substrate alone and the Ge grains firstly form at the Ge/Ge bonded interface, rather than the Ge/Si interface. We believe that the stress-induced crystallization of a-Ge film and the intermixing of Ge atoms at the Ge/Ge interface can be responsible for this feature.

  6. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  7. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

    Energy Technology Data Exchange (ETDEWEB)

    Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich (Switzerland); Meduňa, M. [Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno (Czech Republic); CEITEC, Masaryk University Kamenice 5, CZ-60177 Brno (Czech Republic); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano (Italy); Isa, F. [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich (Switzerland); L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Barthazy Meier, E.; Müller, E. [Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland); Isella, G. [L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)

    2016-02-07

    Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

  8. Experimental investigation of photon multiplicity and radiation cooling for 150 GeV electrons/positrons traversing diamond and Si crystals

    Science.gov (United States)

    Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Paludan, K.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Connell, S. H.; Sellschop, J. P. F.; Avakian, R. O.; Avetisian, A. E.; Taroian, S. P.

    1996-10-01

    Detailed experimental investigations of photon multiplicities for 150 GeV electrons/positrons traversing thin diamond and Si crystals have been performed. Along axial directions up to 10 photons are emitted in 1.5 mm diamond for a radiative energy loss larger than 4 GeV. This corresponds to a mean free path for photon emission of about two orders of magnitude shorter than in an amorphous target. This is in agreement with an enhanced radiative energy loss of ˜ 30 times that in amorphous targets. The strongly enhanced photon emission leads to radiation cooling which can result in particles exiting the crystal with a reduced angle to the axis. For incidences along planar directions the average multiplicity is still above one, even for the thinnest crystals used in the present experiment, so a single-photon spectrum can only be obtained for thicknesses ≤50 μm, which, on the other hand, is comparable to the coherence lengths for GeV photons, leading to destruction of the coherent effects.

  9. Oxygen diffusion in single crystal barium titanate.

    Science.gov (United States)

    Kessel, Markus; De Souza, Roger A; Martin, Manfred

    2015-05-21

    Oxygen diffusion in cubic, nominally undoped, (100) oriented BaTiO3 single crystals has been studied by means of (18)O2/(16)O2 isotope exchange annealing and subsequent determination of the isotope profiles in the solid by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Experiments were carried out as a function of temperature 973 coefficient ks*, the space-charge potential Φ0 and the bulk diffusion coefficient D*(∞). Analysis of the temperature and oxygen activity dependencies of D*(∞) and Φ0 yields a consistent picture of both the bulk and the interfacial defect chemistry of BaTiO3. Values of the oxygen vacancy diffusion coefficient DV extracted from measured D*(∞) data are compared with literature data; consequently a global expression for the vacancy diffusivity in BaTiO3 for the temperature range 466 < T/K < 1273 is obtained, with an activation enthalpy of vacancy migration, ΔHmig,V = (0.70 ± 0.04) eV.

  10. Thermomechanical fatigue in single crystal superalloys

    Directory of Open Access Journals (Sweden)

    Moverare Johan J.

    2014-01-01

    Full Text Available Thermomechanical fatigue (TMF is a mechanism of deformation which is growing in importance due to the efficiency of modern cooling systems and the manner in which turbines and associated turbomachinery are now being operated. Unfortunately, at the present time, relatively little research has been carried out particularly on TMF of single crystal (SX superalloys, probably because the testing is significantly more challenging than the more standard creep and low cycle fatigue (LCF cases; the scarcity and relative expense of the material are additional factors. In this paper, the authors summarise their experiences on the TMF testing of SX superalloys, built up over several years. Emphasis is placed upon describing: (i the nature of the testing method, the challenges involved in ensuring that an given testing methodology is representative of engine conditions (ii the behaviour of a typical Re-containing second generation alloy such as CMSX-4, and its differing performance in out-of-phase/in-phase loading and crystallographic orientation and (iii the differences in behaviour displayed by the Re-containing alloys and new Re-free variants such as STAL15. It is demonstrated that the Re-containing superalloys are prone to different degradation mechanisms involving for example microtwinning, TCP precipitation and recrystallisation. The performance of STAL15 is not too inferior to alloys such as CMSX-4, suggesting that creep resistance itself does not correlate strongly with resistance to TMF. The implications for alloy design efforts are discussed.

  11. Excitonic polaritons of zinc diarsenide single crystals

    Science.gov (United States)

    Syrbu, N. N.; Stamov, I. G.; Zalamai, V. V.; Dorogan, A.

    2017-02-01

    Excitonic polaritons of ZnAs2 single crystals had been investigated. Parameters of singlet excitons with D2bar(z) symmetry and orthoexcitons 2D1bar(y)+D2bar(x) had been determined. Spectral dependencies of ordinary and extraordinary dispersion of refractive index had been calculated using interferential reflection and transmittance spectra. It was shown, that A excitonic series were due to hole (V1) and electron (C1) bands. The values of effective masses of electrons (mc*=0.10 m0) and holes (mv1*=0.89 m0) had been estimated. It was revealed that the hole mass mv1* changes from 1.03 m0 to 0.55 m0 at temperature increasing from 10 K up to 230 K and that the electron mass mc* does not depend on temperature. The integral absorption A (eV cm-1) of the states n=1, 2 and 3 of D2bar(z) excitons depends on the An≈n-3 equality, which it is characteristic for S-type excitonic functions. Temperature dependences of the integral absorption of ground states for D2bar(z) and D2bar(D) excitons differ. The ground states of B and C excitons formed by V3 - C1 and V4 - C1 bands and its parameters had been determined.

  12. Growth and Characterization on PMN-PT-Based Single Crystals

    Directory of Open Access Journals (Sweden)

    Jian Tian

    2014-07-01

    Full Text Available Lead magnesium niobate—lead titanate (PMN-PT single crystals have been successfully commercialized in medical ultrasound imaging. The superior properties of PMN-PT crystals over the legacy piezoelectric ceramics lead zirconate titanate (PZT enabled ultrasound transducers with enhanced imaging (broad bandwidth and improved sensitivity. To obtain high quality and relatively low cost single crystals for commercial production, PMN-PT single crystals were grown with modified Bridgman method, by which crystals were grown directly from stoichiometric melt without flux. For ultrasound imaging application, [001] crystal growth is essential to provide uniform composition and property within a crystal plate, which is critical for transducer performance. In addition, improvement in crystal growth technique is under development with the goals of improving the composition homogeneity along crystal growth direction and reducing unit cost of crystals. In recent years, PIN-PMN-PT single crystals have been developed with higher de-poling temperature and coercive field to provide improved thermal and electrical stability for transducer application.

  13. Single crystal micromechanical resonator and fabrication methods thereof

    Energy Technology Data Exchange (ETDEWEB)

    Olsson, Roy H.; Friedmann, Thomas A.; Homeijer, Sara Jensen; Wiwi, Michael; Hattar, Khalid Mikhiel; Clark, Blythe; Bauer, Todd; Van Deusen, Stuart B.

    2016-12-20

    The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.

  14. Single crystal micromechanical resonator and fabrication methods thereof

    Science.gov (United States)

    Olsson, Roy H.; Friedmann, Thomas A.; Homeijer, Sara Jensen; Wiwi, Michael; Hattar, Khalid Mikhiel; Clark, Blythe; Bauer, Todd; Van Deusen, Stuart B.

    2016-12-20

    The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.

  15. Azeotropic binary solvent mixtures for preparation of organic single crystals

    NARCIS (Netherlands)

    Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.

    2009-01-01

    Here, a new approach is introduced to prepare large single crystals of π-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous

  16. Growth of centimeter-sized C60 single crystals

    Institute of Scientific and Technical Information of China (English)

    李宏年; 徐亚伯; 张建华; 何丕模; 李海洋; 吴太权; 鲍世宁

    2001-01-01

    C60 single crystals larger than one centimeter in size are grown with vapor method by nucleation control and by a proper time-dependent temperature process which allows only one nucleus growing larger and larger. X-ray diffraction patterns exhibit the high quality of the sample. As an example of the applications of large single C60 crystals,svnchrotron radiation photoemission spectra are measured to investigate the fine structure of valence bands of C60 crystals.

  17. Neutron thermodiffraction study of the crystallization of Ag-Ge-Se glasses: evidence of a new phase

    Energy Technology Data Exchange (ETDEWEB)

    Piarristeguy, Andrea A; Yot, Pascal G; Ribes, Michel; Pradel, Annie [Institut Charles Gerhardt, Equipe PMDP UMR 5253 CNRS, CC1503, Universite Montpellier 2, F-34095 Montpellier Cedex 5 (France); Cuello, Gabriel J [Institut Laue Langevin, 6 rue Jules Horowitz, BP 156, F-38042 Grenoble Cedex 9 (France)], E-mail: andrea.piarristeguy@lpmc.univ-montp2.fr, E-mail: cuello@ill.eu, E-mail: pyot@lpmc.univ-montp2.fr, E-mail: mribes@lpmc.univ-montp2.fr, E-mail: apradel@lpmc.univ-montp2.fr

    2008-04-16

    Silver-containing chalcogenide glasses are potential candidates for electrical memory manufacturing. In order to study the glasses under dynamic conditions, using the temperature as the main parameter, a neutron thermodiffraction study of three Ag{sub x}(Ge{sub 0.25}Se{sub 0.75}){sub 100-x} glasses (x = 5,15 and 25) was carried out. Two in situ diffraction experiments were performed: a first series including heating ramps from room temperature up to 350 {sup 0}C and a second one comprising the measurement of an isotherm at about 300 {sup 0}C for 5 h. For the three studied glasses two stable crystalline phases were formed during the heating process: the cubic Ag{sub 8}GeSe{sub 6} appeared first, followed by the crystallization of monoclinic GeSe{sub 2}. The crystallization process for the Ag-rich (x = 15 and 25) glasses was more complex, with the appearance of a new unstable phase at high temperature, i.e. Ag{sub 2}GeSe{sub 3}. Such a phase decomposed with time or temperature to produce a new phase, Ag{sub 10}Ge{sub 3}Se{sub 11}, along with the stable GeSe{sub 2}. This phase has never been reported to date while the existence of Ag{sub 2}GeSe{sub 3} was still controversial.

  18. Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Inatomi, Y.; Tsukada, T.; Miyata, H.; Tanaka, R.

    2016-12-01

    Si0.5Ge0.5 crystals were grown at two different temperature gradients on board the International Space Station (ISS) using the traveling liquidus-zone (TLZ) method and effects of temperature gradient on crystal quality were investigated. Although average axial Ge concentration profile was not affected by the temperature gradient, crystal quality was affected greatly. Single crystal length was shortened and constitutional supercooling (CS) is shown to occur more easily at higher temperature gradient. The calculated degree of CS based on the solute concentration profile in the melt and phase diagram data is about 4 times larger when the temperature gradient is twice, which supports the experimental results. Instability at high temperature gradient is unique to the TLZ method and is not common to other crystal growth methods such as the directional solidification method and Czochralski method.

  19. Investigation on Growth and Optical Properties of LVCC Single Crystals

    Directory of Open Access Journals (Sweden)

    N. Sheen Kumar

    2014-11-01

    Full Text Available L-valine cadmium chloride (LVCC single crystals were grown by slow evaporation technique with different concentrations (0.25, 0.5, 0.75 and 1.0 mole of CdCl2. All the grown crystals were subjected to single crystal X-ray diffraction analysis. Solid state parameters were calculated for the grown crystals. The optical properties of the crystals were investigated by UV-Vis. absorption spectroscopy. The results revealed that, the wider bandgap and large transparency in the visible region along with higher polarizability of the grown crystals are highly useful in optoelectronic devices. Also according to our needs, one can tune the optical and electrical properties of LVCC crystals by adjusting the concentration of CdCl2 in LVCC.

  20. Single crystal to single crystal transformation and hydrogen-atom transfer upon oxidation of a cerium coordination compound.

    Science.gov (United States)

    Williams, Ursula J; Mahoney, Brian D; Lewis, Andrew J; DeGregorio, Patrick T; Carroll, Patrick J; Schelter, Eric J

    2013-04-15

    Trivalent and tetravalent cerium compounds of the octamethyltetraazaannulene (H2omtaa) ligand have been synthesized. Electrochemical analysis shows a strong thermodynamic preference for the formal cerium(IV) oxidation state. Oxidation of the cerium(III) congener Ce(Homtaa)(omtaa) occurs by hydrogen-atom transfer that includes a single crystal to single crystal transformation upon exposure to an ambient atmosphere.

  1. Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

    Science.gov (United States)

    Dyck, J. S.; Colvin, J. R.; Quayle, P. C.; Peshek, T. J.; Kash, K.

    2016-06-01

    II-IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is the II-IV-nitride analogue to the III-nitride GaN. Very little is known about the transport properties of ZnGeN2. In this work, we present Seebeck coefficient ( S) data on 3-micron-diameter, 70-micron-long, single-crystal ZnGeN2 rods, employing a novel measurement approach. The measurements of S show that the majority free carriers are electrons, and imply that the carrier gas is degenerate. Within a single-band model for the conduction band, a carrier concentration of order 1019 cm-3 was estimated for a measured S = -90 μV/K. Together with electrical transport measurements, a lower limit for the electron mobility is estimated to be ˜20 cm2/V-s. A discussion of this material as a thermoelectric is presented. The background level of free electrons in this unintentionally doped ZnGeN2 is very near the predicted optimum value for maximum thermoelectric performance.

  2. Excitonic polaritons of zinc diarsenide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Stamov, I.G. [T.G. Shevchenko State University of Pridnestrovie, Tiraspol, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Dorogan, A. [Technical University of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of)

    2017-02-01

    Excitonic polaritons of ZnAs{sub 2} single crystals had been investigated. Parameters of singlet excitons with Г{sub 2}¯(z) symmetry and orthoexcitons 2Г{sub 1}¯(y)+Г{sub 2}¯(x) had been determined. Spectral dependencies of ordinary and extraordinary dispersion of refractive index had been calculated using interferential reflection and transmittance spectra. It was shown, that A excitonic series were due to hole (V{sub 1}) and electron (C{sub 1}) bands. The values of effective masses of electrons (m{sub c}{sup *}=0.10 m{sub 0}) and holes (m{sub v1}{sup *}=0.89 m{sub 0}) had been estimated. It was revealed that the hole mass m{sub v1}{sup *} changes from 1.03 m{sub 0} to 0.55 m{sub 0} at temperature increasing from 10 K up to 230 K and that the electron mass m{sub c}{sup *} does not depend on temperature. The integral absorption A (eV cm{sup −1}) of the states n=1, 2 and 3 of Г{sub 2}¯(z) excitons depends on the A{sub n}≈n{sup −3} equality, which it is characteristic for S-type excitonic functions. Temperature dependences of the integral absorption of ground states for Г{sub 2}¯(z) and Г{sub 2}¯(Ñ…) excitons differ. The ground states of B and C excitons formed by V{sub 3} – C{sub 1} and V{sub 4} – C{sub 1} bands and its parameters had been determined.

  3. Single shot 3 GeV electron transverse emittance with a pepper-pot

    Science.gov (United States)

    Thomas, Cyrille; Delerue, Nicolas; Bartolini, Riccardo

    2013-11-01

    We present the first measurement of the transverse emittance of an electron bunch at 3 GeV using the pepper-pot technique. The measurements presented in this paper demonstrate the possibility to use such a method for single shot emittance measurement of high energy particles. This measurement presents also the experimental verification of a previous theoretical study, which was predicting in which condition such a measurement can be done. The method may present some technical limitations which are discussed in view of the application to future very small emittance multi-GeV particle accelerators.

  4. Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles

    Science.gov (United States)

    Chen, Bin; Ten Brink, Gert H.; Palasantzas, George; Kooi, Bart J.

    2016-12-01

    Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in damage and deterioration of their useful properties. Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes. Here we unprecedentedly present the size dependence of crystallization for Ge2Sb2Te5 (GST) NPs, whose production is currently highly challenging for chemical synthesis or top-down fabrication. Both amorphous and crystalline NPs have been produced with excellent size and composition control with average diameters varying between 8 and 17 nm. The size-dependent crystallization of these NPs was carefully analyzed through in-situ heating in a transmission electron microscope, where the crystallization temperatures (Tc) decrease when the NPs become smaller. Moreover, methane incorporation has been observed as an effective method to enhance the amorphous phase stability of the NPs. This work therefore elucidates that GST NPs synthesized by gas-phase condensation with tailored properties are promising alternatives in designing phase-change memories constrained by optical lithography limitations.

  5. High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

    KAUST Repository

    Saidaminov, Makhsud I.

    2015-07-06

    Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.

  6. High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

    Science.gov (United States)

    Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Murali, Banavoth; Alarousu, Erkki; Burlakov, Victor M.; Peng, Wei; Dursun, Ibrahim; Wang, Lingfei; He, Yao; Maculan, Giacomo; Goriely, Alain; Wu, Tom; Mohammed, Omar F.; Bakr, Osman M.

    2015-07-01

    Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br- or I-) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.

  7. Simulation of Single Crystal Growth: Heat and Mass Transfer

    CERN Document Server

    Zhmakin, A I

    2015-01-01

    The heat transfer (conductive, convective, radiative) and the related problems (the unknown phase boundary fluid/crystal, the assessment of the quality of the grown crystals) encountered in the melt and vapour growth of single crystal as well as the corresponding macroscopic models are reviewed. The importance of the adequate description of the optical crystal properties (semitransparency, absorption, scattering, refraction, diffuse and specular reflecting surfaces) and their effect on the heat transfer is stressed. The problems of the code verification and validation are discussed; differences between the crystal growth simulation codes intended for the research and for the industrial applications are indicated.

  8. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    X Sahaya Shajan; C Mahadevan

    2004-08-01

    Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium formate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation density was reduced and the size of the crystals was improved to a large extent compared to the conventional way of growing calcium tartrate crystals with calcium chloride. The role played by formate–formic acid on the growth of crystals is discussed. The grown crystals were characterized by atomic absorption spectroscopy (AAS), X-ray diffraction analysis (XRD), microhardness measurement, Fourier transform infrared spectroscopy (FTIR), thermogravimetry (TG) and differential thermal analysis (DTA). The results obtained are compared with the previous work.

  9. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

    Science.gov (United States)

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-06-04

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  10. Physicochemical principles of high-temperature crystallization and single crystal growth methods

    Science.gov (United States)

    Bagdasarov, Kh. S.

    The mechanisms of crystal growth are reviewed, with attention given to the physicochemical reactions taking place in the melt near the phase boundary; phenomena determining physical and chemical kinetics directly at the growth front; solid-phase processes occurring within the crystal. Methods for growing refractory single crystals are discussed with particular reference to the Verneuil method, zone melting, Czhochralskii growth, horizontal directional solidification, and the Stockbarger method. Methods for growing crystals of complex geometrical shapes are also discussed.

  11. Bridgman growth and defects of Nd3+ : Sr3Ga2Ge4O14 laser crystals

    Indian Academy of Sciences (India)

    Jiaxuan Ding; Anhua Wu; Jiayue Xu

    2004-08-01

    Nd3+ : Sr3Ga2Ge4O14 crystals have been grown by the modified Bridgman method. The growth defects, such as striations, scattering particles and dislocations were investigated. Some featherlike striations were observed in as-grown crystals. EPMA analysis suggested that these inclusions were caused by the segregation of Nd2O3 from the melt. Chemical etching results showed that the dislocation density was in the range of 103 ∼ 105/cm2.

  12. The Growth of Large Single Crystals.

    Science.gov (United States)

    Baer, Carl D.

    1990-01-01

    Presented is an experiment which demonstrates principles of experimental design, solubility, and crystal growth and structure. Materials, procedures and results are discussed. Suggestions for adapting this activity to the high school laboratory are provided. (CW)

  13. Growing Single Crystals of Compound Semiconductors

    Science.gov (United States)

    Naumann, Robert J.; Lehoczky, Sandor L.; Frazier, Donald O.

    1987-01-01

    Defect reduced by preventing melt/furnace contact and suppressing convention. Large crystals of compound semiconductors with few defects grown by proposed new method. Such materials as gallium arsenide and cadmium telluride produced, with quality suitable for very-large-scale integrated circuits or for large focal-plane arrays of photodetectors. Method used on small scale in Earth gravity, but needs microgravity to provide crystals large enough for industrial use.

  14. Crystal structure and magnetic properties of GdCo{sub 6}X{sub 6} (X=Ge, Sn) and TbCo{sub 6}Ge{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Szytula, A.; Wawrzynska, E.; Zygmunt, A

    2004-03-10

    Crystal structures of the YCo{sub 6}Ge{sub 6}-type for GdCo{sub 6}X{sub 6} (X=Ge, Sn) and TbCo{sub 6}Ge{sub 6} are determined by X-ray diffraction. The magnetic data indicates that GdCo{sub 6}Ge{sub 6} is an antiferromagnet with a Neel temperature equal to 3 K while GdCo{sub 6}Sn{sub 6} and TbCo{sub 6}Ge{sub 6} are paramagnetic down to 1.8 K.

  15. Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Wei, Huang; Wang, Jianyuan; cheng, Buwen; Liang, Kun; Li, Cheng; Chen, Songyan

    2017-02-01

    The investigation of the single-photon properties of a wafer-bonded Ge/Si single-photon avalanche photodiode (SPAD) is theoretically conducted. We focus on the effect of the natural GeO2 layer (hydrophilic reaction) at the Ge/Si wafer-bonded interface on dark count characteristics and single-photon response. It is found that the wafer-bonded Ge/Si SPAD exhibits very low dark current at 250 K due to the absence of threading dislocation (TD) in the Ge layer. Owing to the increase of the unit-gain bias applied on the SPAD, the primary dark current (I DM) increases with the increase in GeO2 thickness. Furthermore, the dependence of the linear-mode gain and 3 dB bandwidth (BW) for the dark count on GeO2 thickness is also presented. It is observed that the dark count probability of the Ge/Si SPAD significantly increases with the increase in GeO2 thickness due to the increase of the I DM and the reduction of the 3 dB BW. It is also found that with the increase in GeO2 thickness, the external quantum efficiency, which affects the single-photon detection efficiency (SPDE), drastically decreases because of the blocking effect of the GeO2 layer and the serious recombination at the wafer-bonded Ge/Si interface. The afterpulsing probability (AP) shows an abnormal behavior with GeO2 thickness. This results from the decrease in avalanche charge and increase in effective transit time.

  16. Dielectric and baric characteristics of TlS single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)

    2014-11-15

    The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.

  17. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width...... quantum optical properties for single photon application and quantum optics.......We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer...

  18. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Siva Sankari, R. [Department of Physics, Agni College of Technology, Thalambur, Chennai 603103 (India); Perumal, Rajesh Narayana, E-mail: r.shankarisai@gmail.com [Department of Physics, SSN College of Engineering, Kalavakkam, Chennai 603110 (India)

    2014-03-01

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function

  19. Growth and characterization of organic material 4-dimethylaminobenzaldehyde single crystal

    Science.gov (United States)

    Jebin, R. P.; Suthan, T.; Rajesh, N. P.; Vinitha, G.; Madhusoodhanan, U.

    2015-01-01

    The organic material 4-dimethylaminobenzaldehyde single crystals were grown by slow evaporation technique. The grown crystal was confirmed by the single crystal and powder X-ray diffraction analyses. The functional groups of the crystal have been identified from the Fourier Transform Infrared (FTIR) and FT-Raman studies. The optical property of the grown crystal was analyzed by UV-Vis-NIR and photoluminescence (PL) spectral measurements. The thermal behavior of the grown crystal was analyzed by thermogravimetric (TG) and differential thermal analyses (DTA). Dielectric measurements were carried out with different frequencies by using parallel plate capacitor method. The third order nonlinear optical properties of 4-dimethylaminobenzaldehyde was measured by the Z-scan technique using 532 nm diode pumped continuous wave (CW) Nd:YAG laser.

  20. Single crystal Processing and magnetic properties of gadolinium nickel

    Energy Technology Data Exchange (ETDEWEB)

    Shreve, Andrew John [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    GdNi is a rare earth intermetallic material that exhibits very interesting magnetic properties. Spontaneous magnetostriction occurs in GdNi at T{sub C}, on the order of 8000ppm strain along the c-axis and only until very recently the mechanism causing this giant magnetostriction was not understood. In order to learn more about the electronic and magnetic structure of GdNi, single crystals are required for anisotropic magnetic property measurements. Single crystal processing is quite challenging for GdNi though since the rare-earth transition-metal composition yields a very reactive intermetallic compound. Many crystal growth methods are pursued in this study including crucible free methods, precipitation growths, and specially developed Bridgman crucibles. A plasma-sprayed Gd2O3 W-backed Bridgman crucible was found to be the best means of GdNi single crystal processing. With a source of high-quality single crystals, many magnetization measurements were collected to reveal the magnetic structure of GdNi. Heat capacity and the magnetocaloric effect are also measured on a single crystal sample. The result is a thorough report on high quality single crystal processing and the magnetic properties of GdNi.

  1. Single-Crystal Bismuth Iodide Gamma-Ray Spectrometers

    Science.gov (United States)

    2012-02-01

    grow high quality Bib single crystals (> 1 cm3 in volume) via a high temperature modified Bridgman crystal growth technique. We will then test and...methods to improve Bib crystals. Finally, test structures will be designed and their performance will be assessed using a variety of small, calibrated...characteristics of the test structures (basic material properties for Bib ). While the main objectives of the project have not changed, more emphasis is

  2. LETTER TO THE EDITOR: Non-equivalence of Cu crystal sites in CuGeO3 as evidenced by NQR

    Science.gov (United States)

    Gippius, A. A.; Morozova, E. N.; Khozeev, D. F.; Vasil'ev, A. N.; Baenitz, M.; Dhalenne, G.; Revcolevschi, A.

    2000-02-01

    Nuclear quadrupole resonance results on the inorganic spin-Peierls compound CuGeO3 were re-examined using a single crystal and enhanced resolution. A clear splitting of 63,65 Cu NQR lines of about 250 kHz at 4.2 K was observed. Such a splitting has not been previously seen in Cu NQR spectra measured on polycrystalline samples of CuGeO3 (Itoh M et al 1995 Phys. Rev. B 52 3410, Kikuchi et al 1994 J. Phys. Soc. Japan 63 872). The mean frequency of the Cu doublet is in agreement with the Cu NQR frequency observed on powder samples. The splitting does not disappear with increasing temperature above TsP exhibiting only a slight kink at around 16 K. This points to a non-magnetic origin of the splitting which can be attributed to existence of at least two non-equivalent Cu crystal sites in CuGeO3 structure, as predicted by precise x-ray study and EPR measurements (Hidaka M et al 1997 J. Phys.: Condens. Matter 9 809, Yamada I et al 1996 J. Phys.: Condens. Matter 8 2625).

  3. Single crystals of V Amylose complexed with glycerol

    NARCIS (Netherlands)

    Hulleman, S.H.D.; Helbert, W.; Chanzy, H.

    1996-01-01

    Lamellar single crystals of amylose V glycerol were grown at 100°C by evaporating water from solutions of amylose in aqueous glycerol. The crystals which were square, with lateral dimensions of several micrometers, gave sharp electron diffraction patterns presenting an orthorhombic symmetry with a p

  4. Growth features of ammonium hydrogen -tartrate single crystals

    Indian Academy of Sciences (India)

    G Sajeevkumar; R Raveendran; B S Remadevi; Alexander Varghese Vaidyan

    2004-08-01

    Ammonium hydrogen -tartrate (-AHT) single crystals were grown in silica gel. The growth features of these crystals with variation of parameters like specific gravity of the gel, gel pH, acid concentrations, concentration of the feed solution and gel age were studied in detail.

  5. Ellipsometric studies of ErMnO3 single crystals

    DEFF Research Database (Denmark)

    Babonas, G.-J.; Grivel, Jean-Claude; Reza, A.

    2007-01-01

    Ellipsometric studies of ErMnO3 single crystals have been carried out in the spectral range of 1-5 eV by means of photometric ellipsometers. Experimental ellipsometric data were analysed in the uniaxial crystal model. For the first time, the components of dielectric function of ErMnO3 were...

  6. Ellipsometric studies of ErMnO3 single crystals

    DEFF Research Database (Denmark)

    Babonas, G.-J.; Grivel, Jean-Claude; Reza, A.;

    2007-01-01

    Ellipsometric studies of ErMnO3 single crystals have been carried out in the spectral range of 1-5 eV by means of photometric ellipsometers. Experimental ellipsometric data were analysed in the uniaxial crystal model. For the first time, the components of dielectric function of ErMnO3 were...

  7. Synthesis, Growth, and Characterization of Bisglycine Hydrobromide Single Crystal

    Directory of Open Access Journals (Sweden)

    Koteeswari Pandurangan

    2014-01-01

    Full Text Available Single crystals of BGHB were grown by slow evaporation technique. The unit cell dimensions and space group of the grown crystals were confirmed by single crystal X-ray diffraction. The modes of vibration of the molecules and the presence of functional groups were identified using FTIR technique. The microhardness study shows that the Vickers hardness number of the crystal increases with the increase in applied load. The optical properties of the crystals were determined using UV-Visible spectroscopy. The thermal properties of the grown crystal were also determined. The refractive index was determined as 1.396 using Brewster’s angle method. The emission of green light on passing the Nd: YAG laser light confirmed the second harmonic generation property of the crystals and the SHG efficiency of the crystals was found to be higher than that of KDP. The dielectric constant and dielectric loss measurements were carried out for different temperatures and frequencies. The ac conductivity study of the crystals was also discussed. The photoconductivity studies confirm that the grown crystal has negative photoconductivity nature. The etching studies were carried out to study the formation of etch pits.

  8. Ag掺杂对Ge2 Sb2 Te5结晶行为的影响%Crystallization behavior of phase change material Ge2 Sb2 Te5 doped with Ag

    Institute of Scientific and Technical Information of China (English)

    张滔; 郑坤; 张斌; 邵瑞文; 韩晓东; 张泽

    2014-01-01

    通过磁控溅射仪制备了Ge2 Sb2 Te5( GST)和Ag10�6( GST)89�4薄膜,利用X射线衍射( XRD)、电阻-温度( R-T)测试、透射电子显微学以及径向分布函数(RDF)等方法对比研究了GST和Ag10�6(GST)89�4的结晶过程和微观结构及其演化的差异。发现掺Ag的薄膜非晶态、晶态电阻均比GST更高,而且结晶过程只有非晶相到面心立方相( fcc)的转变,没有出现GST的非晶到fcc再到六方相( hcp)的过程,XRD分析进一步证实了这一结果。同时,透射电镜原位加热实验证实了在300℃时,Ag10�6( GST)89�4仍然保持着fcc结构,而GST中已经出现了hcp相。通过统计230℃下时效处理的晶态薄膜的晶粒尺寸,发现Ag10�6( GST)89�4的平均晶粒尺寸小于Ge2 Sb2 Te5薄膜的,这可能是造成其晶态电阻高于GST的主要原因。%Ag-doped Ge2 Sb2 Te5 films have been prepared, and the influence of Ag doping on the crystallization behavior, structure was investigated through X-ray diffraction techniques, electrical resistivity measurement and in situ TEM annealing techniques. The results show that the addition of Ag into GST films could result in an enhancement in electrical resistance compared with Ge2 Sb2 Te5 films. Ag doping can lead to one-step crystallization process from amorphous to single face-centered cubic ( fcc ) phase without any other crystalline phase. HRTEM images show that the grain size in Ag-doped Ge2 Sb2 Te5 films is smaller than that in conventional Ge2 Sb2 Te5 films.

  9. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    S K Arora; Vipul Patel; Brijesh Amin; Anjana Kothari

    2004-04-01

    Strontium tartrate trihydrate (STT) crystals have been grown in silica hydrogel. Various polarization mechanisms such as atomic polarization of lattice, orientational polarization of dipoles and space charge polarization in the grown crystals have been understood using results of the measurements of dielectric constant (') and dielectric loss (tan ) as functions of frequency and temperature. Ion core type polarization is seen in the temperature range 75–180°C, and above 180°C, there is interfacial polarization for relatively lower frequency range. One observes dielectric dispersion at lower frequency presumably due to domain wall relaxation.

  10. Process for Forming a High Temperature Single Crystal Canted Spring

    Science.gov (United States)

    DeMange, Jeffrey J (Inventor); Ritzert, Frank J (Inventor); Nathal, Michael V (Inventor); Dunlap, Patrick H (Inventor); Steinetz, Bruce M (Inventor)

    2017-01-01

    A process for forming a high temperature single crystal canted spring is provided. In one embodiment, the process includes fabricating configurations of a rapid prototype spring to fabricate a sacrificial mold pattern to create a ceramic mold and casting a canted coiled spring to form at least one canted coil spring configuration based on the ceramic mold. The high temperature single crystal canted spring is formed from a nickel-based alloy containing rhenium using the at least one coil spring configuration.

  11. HEiDi: Single crystal diffractometer at hot source

    Directory of Open Access Journals (Sweden)

    Martin Meven

    2015-08-01

    Full Text Available The single crystal diffractometer HEiDi, which is operated by the Institute of Crystallography, RWTH Aachen University and JCNS, Forschungszentrum Jülich, is designed for detailed studies on structural and magnetic properties of single crystals using unpolarised neutrons and Bragg’s Law: 2dhklsinθ = λ (typically 0.55 Å <λ< 1.2 Å.

  12. Generation and detection of the polarization of multi-GeV photons by use of two diamond crystals

    Science.gov (United States)

    Kirsebom, K.; Kononets, Yu. V.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Elsener, K.; Biino, C.; Ballestrero, S.; Sona, P.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.

    1999-07-01

    Presented are experimental results for the difference in pair production probability (the asymmetry) for 5-150 GeV photons polarized parallel and perpendicular to a (110) plane in a 1.5 mm thick diamond crystal. The photons are produced by interaction of 150 GeV electrons with an aligned diamond crystal of 0.5 mm thickness. A significant asymmetry is found over the whole energy range, which corresponds to a high degree of linear polarization of the photons as well as a difference in the refractive index. This proof-of-principle result gives the possibility of producing high energy photons with circular polarization by use of a crystal. This might open for several opportunities in high energy physics like for instance the investigation of the contribution of the gluons to the spin of the nucleon.

  13. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  14. Investigation on the crystallization properties and structure of oxygen-doped Ge8Sb92 phase change thin films

    Science.gov (United States)

    Wu, Weihua; He, Zifang; Chen, Shiyu; Zhai, Jiwei; Song, Sannian; Song, Zhitang

    2017-03-01

    Effects of oxygen incorporation on the crystallization characteristics and crystal structure of Ge8Sb92 films were systematically investigated. The amorphous-to-crystalline transition was studied by in situ resistance measurement. The thermal stability, electrical resistance and band gap of Ge8Sb92 material increase significantly by the addition of oxygen. X-ray diffraction, transmission electron microscopy and x-ray photoelectron spectroscopy illustrate that a small amount of oxygen dopant can inhibit the grain growth and limit the grain size because of the formation of Ge and Sb oxide. Atomic force microscopy and x-ray reflectivity results indicate that the film surface becomes smoother and the film thickness change becomes smaller after oxygen doping. Phase change memory cells based on oxygen-doped Ge8Sb92 film were fabricated to evaluate the electrical properties as well. All the results demonstrate that suitable incorporation of oxygen is an effective way to enhance the comprehensive performance of Ge8Sb92 thin films for phase change memory application.

  15. Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Santala, M. K., E-mail: melissa.santala@oregonstate.edu; Campbell, G. H. [Materials Science Division, Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94551 (United States); Raoux, S. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

    2015-12-21

    The kinetics of laser-induced, liquid-mediated crystallization of amorphous Ge thin films were studied using multi-frame dynamic transmission electron microscopy (DTEM), a nanosecond-scale photo-emission transmission electron microscopy technique. In these experiments, high temperature gradients are established in thin amorphous Ge films with a 12-ns laser pulse with a Gaussian spatial profile. The hottest region at the center of the laser spot crystallizes in ∼100 ns and becomes nano-crystalline. Over the next several hundred nanoseconds crystallization continues radially outward from the nano-crystalline region forming elongated grains, some many microns long. The growth rate during the formation of these radial grains is measured with time-resolved imaging experiments. Crystal growth rates exceed 10 m/s, which are consistent with crystallization mediated by a very thin, undercooled transient liquid layer, rather than a purely solid-state transformation mechanism. The kinetics of this growth mode have been studied in detail under steady-state conditions, but here we provide a detailed study of liquid-mediated growth in high temperature gradients. Unexpectedly, the propagation rate of the crystallization front was observed to remain constant during this growth mode even when passing through large local temperature gradients, in stark contrast to other similar studies that suggested the growth rate changed dramatically. The high throughput of multi-frame DTEM provides gives a more complete picture of the role of temperature and temperature gradient on laser crystallization than previous DTEM experiments.

  16. Growth and characterization of organic single crystal benzyl carbamate

    Science.gov (United States)

    Bala Solanki, S. Siva; Perumal, Rajesh Narayana; Suthan, T.; Bhagavannarayana, G.

    2015-10-01

    Benzyl carbamate single crystal is grown by a solution and vertical Bridgman technique for the first time. The cell parameters and morphologies are assessed from single crystal X-ray diffraction analysis. High resolution X-ray diffraction analysis indicates the crystalline perfection of the grown benzyl carbamate crystal. Fourier Transforms Infrared spectroscopy study has been applied to arrive at the different functional groups. Thermo gravimetric analysis and differential scanning calorimetry are used to study its thermal behavior. The microhardness test is carried out and the load dependent hardness is measured.

  17. Studies on crystal growth and physical properties of 2-amino-5-chloropyridine single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Suthan, T. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Mahadevan, C.K. [Physics Research Centre, S.T. Hindu College, Nagercoil 629 002 (India); Bhagavannarayana, G. [C.G.C. Section, National Physical Laboratory, New Delhi 110 012 (India)

    2011-09-15

    Graphical abstract: 2-Amino-5-chloropyridine single crystal. Highlights: {yields} 2-Amino-5-chloropyridine single crystals grown by slow evaporation technique. {yields} Use acetone as solvent. {yields} Grown crystal conformed by XRD and FTIR. {yields} HRXRD, optical, thermal, dielectric and mechanical studies were analyzed. - Abstract: Organic 2-amino-5-chloropyridine single crystals have been grown by slow evaporation technique successfully. The grown crystal was confirmed by single and powder X-ray diffraction studies. The presence of functional groups was identified by Fourier transform infrared (FTIR) study. High resolution X-ray diffraction (HRXRD) analysis indicates the crystalline perfection of the grown crystal. UV-Vis-NIR analysis was performed to examine the optical property of the grown crystal. The thermal property of the grown crystal was studied by thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The dielectric measurements were carried out and the results indicate an increase in dielectric and conductivity parameters with the increase of temperature at all frequencies. The Vicker's hardness study reveals that the grown crystal is in soft nature.

  18. The lattice parameter of highly pure silicon single crystals

    Science.gov (United States)

    Becker, P.; Scyfried, P.; Siegert, H.

    1982-08-01

    From crystal to crystal comparison, the d 220 lattice spacing in PERFX and WASO silicon crystals used in the only two existing absolute measurements have been found to be equal within ±2×10-7 d 220. This demonstrates that generic variabilities of the two crystals account only for a small part of the 1.8×10-6 d 220 difference in the two absolute measurements. In a new series of 336 single measurements, our d 220 value reported recently has been confirmed within ±2×10-8 d 220. From these results we derive the following lattice parameter for highly pure silicon single crystals: a 0=(543 102.018±0.034) fm (at 22.5°C, in vacuum).

  19. The optical properties of alkali nitrate single crystals

    Science.gov (United States)

    Anan'ev, Vladimir; Miklin, Mikhail

    2000-08-01

    Absorption of non-polarized light by a uniaxial crystal has been studied. The degree of absorption polarization has been calculated as a function of the ratio of optical densities in the region of low and high absorbances. This function is proposed for analysis of the qualitative and quantitative characteristics of uniaxial crystal absorption spectra. Non-polarized light spectra of alkali nitrate single crystals, both pure and doped with thallium, have been studied. It is shown that the absorption band at 300 nm is due to two transitions, whose intensities depend on temperature in various ways. There is a weak band in a short wavelength range of the absorption spectrum of potassium nitrate crystal, whose intensity increases with thallium doping. The band parameters of alkali nitrate single crystals have been calculated. Low-energy transitions in the nitrate ion have been located.

  20. Growth and properties of benzil doped benzimidazole (BMZ) single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Sukumar, M. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Vasudevan, V. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Shakir, Mohd. [Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Bhagavannarayana, G. [Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India)

    2010-09-15

    In the present work, we have made an attempt to study the effect of benzil doping on the properties of benzimidazole single crystals. For this purpose we have grown pure and benzil doped benzimidazole single crystals by vertical Bridgman technique. The grown crystals were characterized by various characterization techniques. The presence of dopants confirmed by powder X-ray diffraction (XRD). Crystalline perfection of the grown crystals has been analysed by high-resolution X-ray diffraction (HRXRD). The transmittance, electrical property and mechanical strength have been analysed using UV-vis-NIR spectroscopic, dielectric and Vicker's hardness studies. The relative second harmonic generation efficiency of pure and doped benzimidazole crystals measured using Kurtz powder test.

  1. Anisotropic behaviour of semiconducting tin monosulphoselenide single crystals

    Indian Academy of Sciences (India)

    T H Patel; Rajiv Vaidya; S G Patel

    2003-10-01

    Single crystals of ternary mixed compounds of group IV–VI in the form of a series, SnSSe1- (where = 0, 0.25, 0.50, 0.75 and 1), have been grown using direct vapour transport technique. The grown crystals were characterized by the X-ray diffraction analysis for their structural parameter determination. All the grown crystals were found to be orthorhombic. The microstructure analysis of the grown crystals reveals their layered type growth mechanism. From the Hall effect measurements Hall mobility, Hall coefficient and carrier concentration were calculated with all crystals showing -type nature. The d.c. electrical resistivity measurements perpendicular to -axis (i.e. along the basal plane) in the temperature range 303–453 K were carried out for grown crystals using four-probe method. The d.c. electrical resistivity measurements parallel to -axis (i.e. perpendicular to basal plane) in the temperature range 303–453 K were carried out for the same crystals. The electrical resistivity measurements showed an anisotropic behaviour of electrical resistivity for the grown crystals. The anisotropic behaviour and the effect of change in stoichiometric proportion of S and Se content on the electrical properties of single crystals of the series, SnSSe1- (where = 0, 0.25, 0.50, 0.75 and 1), is presented systematically.

  2. An analytical model for porous single crystals with ellipsoidal voids

    Science.gov (United States)

    Mbiakop, A.; Constantinescu, A.; Danas, K.

    2015-11-01

    A rate-(in)dependent constitutive model for porous single crystals with arbitrary crystal anisotropy (e.g., FCC, BCC, HCP, etc.) containing general ellipsoidal voids is developed. The proposed model, denoted as modified variational model (MVAR), is based on the nonlinear variational homogenization method, which makes use of a linear comparison porous material to estimate the response of the nonlinear porous single crystal. Periodic multi-void finite element simulations are used in order to validate the MVAR for a large number of parameters including cubic (FCC, BCC) and hexagonal (HCP) crystal anisotropy, various creep exponents (i.e., nonlinearity), several stress triaxiality ratios, general void shapes and orientations and various porosity levels. The MVAR model, which involves a priori no calibration parameters, is found to be in good agreement with the finite element results for all cases considered in the rate-dependent context. The model is then used in a predictive manner to investigate the complex response of porous single crystals in several cases with strong coupling between the anisotropy of the crystal and the (morphological) anisotropy induced by the shape and orientation of the voids. Finally, a simple way of calibrating the MVAR with just two adjustable parameters is depicted in the rate-independent context so that an excellent agreement with the FE simulation results is obtained. In this last case, this proposed model can be thought as a generalization of the Gurson model in the context of porous single crystals and general ellipsoidal void shapes and orientations.

  3. Anisotropy of nickel-base superalloy single crystals

    Science.gov (United States)

    Mackay, R. A.; Maier, R. D.; Dreshfield, R. L.

    1980-01-01

    The effects of crystal orientation on the mechanical properties of single crystals of the nickel-based superalloy Mar-M247 are investigated. Tensile tests at temperatures from 23 to 1093 C and stress rupture tests at temperatures from 760 to 1038 C were performed for 52 single crystals at various orientations. During tensile testing between 23 and 760 C, single crystals with high Schmid factors were found to be favorably oriented for slip and to exhibit lower strength and higher ductility than those with low Schmid factors. Crystals which required large rotations to become oriented for cross slip were observed to have the shortest stress rupture lives at 760 C, while those which required little or no rotation had the longest lives. In addition, stereographic triangles obtained for Mar-M247 and Mar-M200 single crystals reveal that crystals with orientations near the -111 had the highest lives, those near the 001 had high lives, and those near the 011 had low lives.

  4. Anisotropy of nickel-base superalloy single crystals

    Science.gov (United States)

    Mackay, R. A.; Maier, R. D.; Dreshfield, R. L.

    1980-01-01

    The effects of crystal orientation on the mechanical properties of single crystals of the nickel-based superalloy Mar-M247 are investigated. Tensile tests at temperatures from 23 to 1093 C and stress rupture tests at temperatures from 760 to 1038 C were performed for 52 single crystals at various orientations. During tensile testing between 23 and 760 C, single crystals with high Schmid factors were found to be favorably oriented for slip and to exhibit lower strength and higher ductility than those with low Schmid factors. Crystals which required large rotations to become oriented for cross slip were observed to have the shortest stress rupture lives at 760 C, while those which required little or no rotation had the longest lives. In addition, stereographic triangles obtained for Mar-M247 and Mar-M200 single crystals reveal that crystals with orientations near the -111 had the highest lives, those near the 001 had high lives, and those near the 011 had low lives.

  5. Cladded single crystal fibers for high power fiber lasers

    Science.gov (United States)

    Kim, W.; Shaw, B.; Bayya, S.; Askins, C.; Peele, J.; Rhonehouse, D.; Meyers, J.; Thapa, R.; Gibson, D.; Sanghera, J.

    2016-09-01

    We report on the recent progress in the development of cladded single crystal fibers for high power single frequency lasers. Various rare earth doped single crystal YAG fibers with diameters down to 17 μm with length > 1 m have been successfully drawn using a state-of-the-art Laser Heated Pedestal Growth system. Single and double cladding on rare earth doped YAG fibers have been developed using glasses where optical and physical properties were precisely matched to doped YAG core single crystal fiber. The double clad Yb:YAG fiber structures have dimensions analogous to large mode area (LMA) silica fiber. We also report successful fabrications of all crystalline core/clad fibers where thermal and optical properties are superior over glass cladded YAG fibers. Various fabrication methods, optical characterization and gain measurements on these cladded YAG fibers are reported.

  6. High-quality single crystals for neutron experiments

    Indian Academy of Sciences (India)

    Geetha Balakrishnan

    2008-10-01

    To make headway on any problem in physics, high-quality single crystals are required. In this talk, special emphasis will be placed on the crystal growth of various oxides (superconductors and magnetic materials), borides and carbides using the image furnaces at Warwick. The floating zone method of crystal growth used in these furnaces produces crystals of superior quality, circumventing many of the problems associated with, for example, flux growth from the melt. This method enables the growth of large volumes of crystal, a prerequisite especially for experiments using neutron beams. Some examples of experimental results from crystals grown at Warwick, selected from numerous in-house studies and our collaborative research projects with other UK and international groups will be discussed.

  7. New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

    Science.gov (United States)

    Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

    2017-10-01

    Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.

  8. Coherent bremsstrahlung, coherent pair production, birefringence, and polarimetry in the 20–170 GeV energy range using aligned crystals

    Directory of Open Access Journals (Sweden)

    2008-04-01

    Full Text Available The processes of coherent bremsstrahlung (CB and coherent pair production (CPP based on aligned crystal targets have been studied in the energy range 20–170 GeV. The experimental arrangement allowed for measurements of single photon properties of these phenomena including their polarization dependences. This is significant as the theoretical description of CB and CPP is an area of active debate and development. With the approach used in this paper, both the measured cross sections and polarization observables are predicted very well. This indicates a proper understanding of CB and CPP up to energies of 170 GeV. Birefringence in CPP on aligned crystals is applied to determine the polarization parameters in our measurements. New technologies for high-energy photon beam optics including phase plates and polarimeters for linear and circular polarization are demonstrated in this experiment. Coherent bremsstrahlung for the strings-on-strings (SOS orientation yields a larger enhancement for hard photons than CB for the channeling orientations of the crystal. Our measurements and our calculations indicate low photon polarizations for the high-energy SOS photons.

  9. Mesoporous zeolite single crystals for catalytic hydrocarbon conversion

    DEFF Research Database (Denmark)

    Schmidt, I.; Christensen, C.H.; Hasselriis, Peter

    2005-01-01

    transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport.......Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...

  10. Mesoporous zeolite single crystals for catalytic hydrocarbon conversion

    DEFF Research Database (Denmark)

    Schmidt, I.; Christensen, C.H.; Hasselriis, Peter

    2005-01-01

    Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...... transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport....

  11. Chemical Bond Analysis of Single Crystal Growth of Magnesium Oxide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Starting from the crystallographic structure of magnesium oxide (MgO), both the chemical bond model of solids and Pauling's third rule (polyhedral sharing rule) were employed to quantitatively analyze the chemical bonding structure of constituent atoms and single crystal growth. Our analytical results show that MgO single crystals prefer to grow along the direction and the growth rate of the {100} plane is the slowest one. Therefore, the results show that the {100} plane of MgO crystals can be the ultimate morphology face, which is in a good agreement with our previous experimental results. The study indicate that the structure analysis is an effective tool to control the single-crystal growth.

  12. Optical properties of opaline photonic crystals covered by phase-change material Ge$_2$Sb$_2$Te$_5$

    CERN Document Server

    Dyakov, Sergey A; Voronov, Mikhail M; Yakovlev, Sergey A; Pevtsov, Alexander B; Akimov, Ilya A; Tikhodeev, Sergei G

    2016-01-01

    Reflection spectra from 3D opaline photonic crystals covered with phase-change material Ge$_2$Sb$_2$Te$_5$ are studied for different incident angles of light both experimentally and theoretically. We demonstrate that in presence of Ge$_2$Sb$_2$Te$_5$ chalcogenide capping layer, the reflection spectra have peaks associated with resonant Wood's anomalies. The experimental reflection spectra are in a good agreement with theoretical calculations performed by the Fourier modal method in the scattering matrix form. The electromagnetic near-field distributions of incident light at resonant frequencies are calculated.

  13. Application of Bent Crystals at IHEP 70-GeV Accelerator to Enhance the Efficiency of its Usage

    CERN Document Server

    Afonin, A G; Chesnokov, Yu A; Fedotov, Yu S; Galjaev, A N; Gres, V N; Ivanov, Yu B; Kotov, V I; Maisheev, V A; Medvedev, V A; Minchenko, A V; Scandale, Walter; Terekhov, V I; Troyanov, E F; Zapolskii, V N; Zelenov, B A

    2000-01-01

    Bent crystal was extracting 70-GeV protons with average intensity 4x10$^{11}$ (as measured in external beamline) per spill of ~1.6 s duration, in parallel to the simultaneous work of two internal targets in the accelerator ring. An additional crystal, placed in the external beamline, was deflecting a small part of the extracted beam with intensity ~10$^7$ protons toward another physics experiment. Crystal-extracted beam had a typical size of 4 mm by 4 mm fwhm at the end of the external beamline. Measurements for the extraction efficiency and other characteristics at the simultaneous work of four experimental set-ups are presented. With crystal working in the above-said regime during one month, no degradation of channeling was observed. The studies of extraction efficiency have been continued with new crystals.

  14. Ge and B doped collapsed photonic crystal optical fibre, a potential TLD material for low dose measurements

    Science.gov (United States)

    Rozaila, Z. Siti; Alyahyawi, Amjad; Khandaker, M. U.; Amin, Y. M.; Bradley, D. A.; Maah, M. J.

    2016-09-01

    Offering a number of advantageous features, tailor-made silica-based fibres are attracting attention as thermoluminesence (TL) dosimeters. We have performed a detailed study of the TL properties of Ge-doped and Ge-B-doped collapsed photonic crystal fibres (PCFc), most particularly with regard to their potential use for the environmental and X-ray diagnostic dose monitoring. Extrinsic doping and defects generated by strain at the fused inner walls of the collapsed fibres result in the PCFc-Ge-B and PCFc-Ge fibres producing markedly greater TL response than that of the phosphor-based dosimeter TLD-100, by some 9 and 7×, respectively. The linearity of TL yield has been investigated for X-ray doses from 0.5 mGy to 10 mGy. For a dose of 1 Gy, the energy response of the PCFs and TLD-100 has been studied using X-rays generated at accelerating potentials from 20 kVp through to 200 kVp and for the 1.25 MeV mean gamma-ray energy from 60Co. The effective atomic number , Zeffof PCFc-Ge and PCFc-Ge-B was estimated to be 12.5 and 14.4, respectively. Some 35 days post-irradiation, fading of the stored TL signal from PCFc-Ge-B and PCFc-Ge were found to be ∼15% and 20% respectively, with mean loss in TL emission of 0.4-0.5% per day. The present doped-silica collapsed PCFs provide greatly improved TLD performance compared to that of previous fibre designs and phosphor-based TLD-100.

  15. Method of making macrocrystalline or single crystal semiconductor material

    Science.gov (United States)

    Shlichta, P. J. (Inventor); Holliday, R. J. (Inventor)

    1986-01-01

    A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low melting material. This primary substrate is deposited on a base such as steel or ceramic, and it may be formed from such metals as zinc, cadmium, germanium, aluminum, tin, lead, copper, brass, magnesium silicide, or magnesium stannide. These materials generally have a melting point below about 1000 C and form on the base crystals the size of fingernails or greater. The primary substrate has an epitaxial relationship with a subsequently applied layer of material, and because of this epitaxial relationship, the material deposited on the primary substrate will have essentially the same crystal size as the crystals in the primary substrate. If required, successive layers are formed, each of a material which has an epitaxial relationship with the previously deposited layer, until a layer is formed which has an epitaxial relationship with the semiconductive material. This layer is referred to as the epitaxial substrate, and its crystals serve as sites for the growth of large crystals of semiconductive material. The primary substrate is passivated to remove or otherwise convert it into a stable or nonreactive state prior to deposition of the seconductive material.

  16. Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

    Science.gov (United States)

    El-Said, A. S.; Wilhelm, R. A.; Heller, R.; Akhmadaliev, Sh.; Schumann, E.; Sorokin, M.; Facsko, S.; Trautmann, C.

    2016-09-01

    GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV 129Xe(33-40)+ and with various swift heavy ions (SHI) of 30 MeV I9+ and 374 MeV-2.2 GeV 197Au25+. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

  17. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  18. Inspection of Single Crystal Aerospace Components with Ultrasonic Arrays

    Science.gov (United States)

    Lane, C. J. L.; Dunhill, A.; Drinkwater, B. W.; Wilcox, P. D.

    2010-02-01

    Single crystal metal alloys are used extensively in the manufacture of jet engine components for their excellent mechanical properties at elevated temperatures. The increasing use of these materials and demand for longer operational life and improved reliability motivates the requirement to have capable NDE methods available. Ultrasonic arrays are well established at detecting sub-surface defects however these methods are not currently suitable to the inspection of single crystal components due to their high elastic anisotropy causing directional variation in ultrasonic waves. In this paper a model of wave propagation in anisotropic material is used to correct an ultrasonic imaging algorithm and is applied to single crystal test specimens. The orientation of the crystal in a specimen must be known for this corrected-algorithm; therefore a crystal orientation method is also presented that utilizes surface skimming longitudinal waves under a 2D array. The work detailed in this paper allows an ultrasonic 2D array to measure the orientation of a single crystal material and then perform accurate volumetric imaging to detect and size defects.

  19. Benzothiazolium Single Crystals: A New Class of Nonlinear Optical Crystals with Efficient THz Wave Generation.

    Science.gov (United States)

    Lee, Seung-Heon; Lu, Jian; Lee, Seung-Jun; Han, Jae-Hyun; Jeong, Chan-Uk; Lee, Seung-Chul; Li, Xian; Jazbinšek, Mojca; Yoon, Woojin; Yun, Hoseop; Kang, Bong Joo; Rotermund, Fabian; Nelson, Keith A; Kwon, O-Pil

    2017-08-01

    Highly efficient nonlinear optical organic crystals are very attractive for various photonic applications including terahertz (THz) wave generation. Up to now, only two classes of ionic crystals based on either pyridinium or quinolinium with extremely large macroscopic optical nonlinearity have been developed. This study reports on a new class of organic nonlinear optical crystals introducing electron-accepting benzothiazolium, which exhibit higher electron-withdrawing strength than pyridinium and quinolinium in benchmark crystals. The benzothiazolium crystals consisting of new acentric core HMB (2-(4-hydroxy-3-methoxystyryl)-3-methylbenzo[d]thiazol-3-ium) exhibit extremely large macroscopic optical nonlinearity with optimal molecular ordering for maximizing the diagonal second-order nonlinearity. HMB-based single crystals prepared by simple cleaving method satisfy all required crystal characteristics for intense THz wave generation such as large crystal size with parallel surfaces, moderate thickness and high optical quality with large optical transparency range (580-1620 nm). Optical rectification of 35 fs pulses at the technologically very important wavelength of 800 nm in 0.26 mm thick HMB crystal leads to one order of magnitude higher THz wave generation efficiency with remarkably broader bandwidth compared to standard inorganic 0.5 mm thick ZnTe crystal. Therefore, newly developed HMB crystals introducing benzothiazolium with extremely large macroscopic optical nonlinearity are very promising materials for intense broadband THz wave generation and other nonlinear optical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Crystal Growth in Al72.9Ge27.1 Alloy Melt under Acoustic Levitation Conditions

    Institute of Scientific and Technical Information of China (English)

    YAN Na; DAI Fu-Ping; WANG Wei-Li; WEI Bing-Bo

    2011-01-01

    The nonequilibrium solidification of liquid Al72.9Ge27.1 hypoeutectic alloy is accomplished by using single-axis acoustic levitation.A maximum undercooling of 112K (0.16TL) is obtained for the alloy melt at a coofing rate of 50 K/s. The primary (Al) phase displays a morphological transition from coarse dendrite under a normal conditions to equiaxed grain under acoustic levitation.In the (Al)+(Ge) eutectic,the (Ge) phase exhibits a conspicuous branched growth morphology.Both the primary (Al) dendrites and (Al)+(Ge) eutectics are well refined and the solute content of the primary (Al) phase is extended under acoustic levitation.The calculated and experimental results indicate that the solute trapping effect becomes more intensive with the enhancement of bulk undercooling.

  1. Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Gu

    Institute of Scientific and Technical Information of China (English)

    SONG Zhen-Fei; ZHU Wen-Jun; DENG Xiao-Liang; HE Hong-Liang

    2006-01-01

    @@ The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation.Large-scale molecular dynamics (MD) simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.

  2. Crystallization phase diagram, the growth of large single crystals of bovine {beta}-Lactoglobulin A

    Energy Technology Data Exchange (ETDEWEB)

    Yagi, D; Ohnishi, Y; Tanaka, I; Niimura, N, E-mail: niimura@mx.ibaraki.ac.jp

    2010-11-01

    A crystallization phase diagram defining the meta-stable region of bovine {beta}-lactoglobulin A ({beta}-Lg) was firstly determined by a dialysis method. We have succeeded in growing a large single crystal of {beta}-Lg by selecting a crystal grown in this ''meta-stable region'' method described in the present paper. The quality of protein crystals was characterized quantitatively via rapid X-ray data collections, followed by the use of Wilson plots to analyze their resulting average B-factors.

  3. Crystallization phase diagram, the growth of large single crystals of bovine β-Lactoglobulin A

    Science.gov (United States)

    Yagi, D.; Ohnishi, Y.; Tanaka, I.; Niimura, N.

    2010-11-01

    A crystallization phase diagram defining the meta-stable region of bovine β-lactoglobulin A (β-Lg) was firstly determined by a dialysis method. We have succeeded in growing a large single crystal of β-Lg by selecting a crystal grown in this "meta-stable region" method described in the present paper. The quality of protein crystals was characterized quantitatively via rapid X-ray data collections, followed by the use of Wilson plots to analyze their resulting average B-factors.

  4. Growth and high pressure studies of zirconium sulphoselenide single crystals

    Indian Academy of Sciences (India)

    K R Patel; R D Vaidya; M S Dave; S G Patel

    2009-11-01

    Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of zirconium sulphoselenide single crystals. The chemical vapour transport technique was used for the growth of zirconium sulphoselenide single crystals. The energy dispersive analysis by X-ray (EDAX) gave the confirmation about the stoichiometry of the as-grown crystals and other structural characterizations were accomplished by X-ray diffraction (XRD) study. The variation of electrical resistance was monitored in a Bridgman opposed anvil set-up up to 8 GPa pressure to identify the occurrence of any structural transition. These crystals do not possess any structural transitions upto the pressure limit examined.

  5. Geometric constraints on phase coexistence in vanadium dioxide single crystals

    Science.gov (United States)

    McGahan, Christina; Gamage, Sampath; Liang, Jiran; Cross, Brendan; Marvel, Robert E.; Haglund, Richard F.; Abate, Yohannes

    2017-02-01

    The appearance of stripe phases is a characteristic signature of strongly correlated quantum materials, and its origin in phase-changing materials has only recently been recognized as the result of the delicate balance between atomic and mesoscopic materials properties. A vanadium dioxide (VO2) single crystal is one such strongly correlated material with stripe phases. Infrared nano-imaging on low-aspect-ratio, single-crystal VO2 microbeams decorated with resonant plasmonic nanoantennas reveals a novel herringbone pattern of coexisting metallic and insulating domains intercepted and altered by ferroelastic domains, unlike previous reports on high-aspect-ratio VO2 crystals where the coexisting metal/insulator domains appear as alternating stripe phases perpendicular to the growth axis. The metallic domains nucleate below the crystal surface and grow towards the surface with increasing temperature as suggested by the near-field plasmonic response of the gold nanorod antennas.

  6. Single-Crystal Structure of a Covalent Organic Framework

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, YB; Su, J; Furukawa, H; Yun, YF; Gandara, F; Duong, A; Zou, XD; Yaghi, OM

    2013-11-06

    The crystal structure of a new covalent organic framework, termed COF-320, is determined by single-crystal 3D electron diffraction using the rotation electron diffraction (RED) method for data collection. The COF crystals are prepared by an imine condensation of tetra-(4-anilyl)methane and 4,4'-biphenyldialdehyde in 1,4-dioxane at 120 degrees C to produce a highly porous 9-fold interwoven diamond net. COF-320 exhibits permanent porosity with a Langmuir surface area of 2400 m(2)/g and a methane total uptake of 15.0 wt % (176 cm(3)/cm(3)) at 25 degrees C and 80 bar. The successful determination of the structure of COF-320 directly from single-crystal samples is an important advance in the development of COF chemistry.

  7. Geometric constraints on phase coexistence in vanadium dioxide single crystals.

    Science.gov (United States)

    McGahan, Christina; Gamage, Sampath; Liang, Jiran; Cross, Brendan; Marvel, Robert E; Haglund, Richard F; Abate, Yohannes

    2017-02-24

    The appearance of stripe phases is a characteristic signature of strongly correlated quantum materials, and its origin in phase-changing materials has only recently been recognized as the result of the delicate balance between atomic and mesoscopic materials properties. A vanadium dioxide (VO2) single crystal is one such strongly correlated material with stripe phases. Infrared nano-imaging on low-aspect-ratio, single-crystal VO2 microbeams decorated with resonant plasmonic nanoantennas reveals a novel herringbone pattern of coexisting metallic and insulating domains intercepted and altered by ferroelastic domains, unlike previous reports on high-aspect-ratio VO2 crystals where the coexisting metal/insulator domains appear as alternating stripe phases perpendicular to the growth axis. The metallic domains nucleate below the crystal surface and grow towards the surface with increasing temperature as suggested by the near-field plasmonic response of the gold nanorod antennas.

  8. Modelling of Heat Transfer in Single Crystal Growth

    CERN Document Server

    Zhmakin, Alexander I

    2014-01-01

    An attempt is made to review the heat transfer and the related problems encountered in the simulation of single crystal growth. The peculiarities of conductive, convective and radiative heat transfer in the different melt, solution, and vapour growth methods are discussed. The importance of the adequate description of the optical crystal properties (semitransparency, specular reflecting surfaces) and their effect on the heat transfer is stresses. Treatment of the unknown phase boundary fluid/crystal as well as problems related to the assessment of the quality of the grown crystals (composition, thermal stresses, point defects, disclocations etc.) and their coupling to the heat transfer/fluid flow problems is considered. Differences between the crystal growth simulation codes intended for the research and for the industrial applications are indicated. The problems of the code verification and validation are discussed; a brief review of the experimental techniques for the study of heat transfer and flow structu...

  9. Crystallization in Emulsions: A Thermo-Optical Method to Determine Single Crystallization Events in Droplet Clusters

    Directory of Open Access Journals (Sweden)

    Serghei Abramov

    2016-08-01

    Full Text Available Delivery systems with a solid dispersed phase can be produced in a melt emulsification process. For this, dispersed particles are melted, disrupted, and crystallized in a liquid continuous phase (melt emulsification. Different to bulk crystallization, droplets in oil-in-water emulsions show individual crystallization behavior, which differs from droplet to droplet. Therefore, emulsion droplets may form liquid, amorphous, and crystalline structures during the crystallization process. The resulting particle size, shape, and physical state influence the application properties of these colloidal systems and have to be known in formulation research. To characterize crystallization behavior of single droplets in micro emulsions (range 1 µm to several hundred µm, a direct thermo-optical method was developed. It allows simultaneous determination of size, size distribution, and morphology of single droplets within droplet clusters. As it is also possible to differentiate between liquid, amorphous, and crystalline structures, we introduce a crystallization index, CIi, in dispersions with a crystalline dispersed phase. Application of the thermo-optical approach on hexadecane-in-water model emulsion showed the ability of the method to detect single crystallization events of droplets within emulsion clusters, providing detailed information about crystallization processes in dispersions.

  10. High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

    OpenAIRE

    Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Murali, Banavoth; Alarousu, Erkki; Burlakov, Victor M.; Peng, Wei; Dursun, Ibrahim; Wang, Lingfei; He, Yao; Maculan, Giacomo; Goriely, Alain; Wu, Tom; Mohammed, Omar F.; Bakr, Osman M.

    2015-01-01

    Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3 +, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at e...

  11. Synthesis, crystal growth and mechanical properties of Bismuth Silicon Oxide (BSO) single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Riscob, B. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Institute for Plasma Research, Bhat, Gandhinagar 382428, Gujarat (India); Shkir, Mohd. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Ganesh, V. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Vijayan, N.; Maurya, K.K. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Kishan Rao, K. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Bhagavannarayana, G., E-mail: bhagavan@mail.nplindia.ernet.in [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India)

    2014-03-05

    Highlights: • Synthesis of Bismuth Silicon Oxide (BSO). • Single crystal growth of BSO by Czochralski (Cz) method. • Complete mechanical analysis by device fabrication point of view. • Theoretical and experimental calculations of mechanical properties. -- Abstract: Bismuth Silicon Oxide (BSO) is an efficient material for piezo-electric and electro-optic applications. In this article, growth of BSO single crystal by high temperature Czochralski melt growth technique and its detailed mechanical characterization by Vickers microhardness, fracture toughness, crack propagation, brittleness index and yield strength have been reported. The raw material was synthesized by solid state reaction using the stoichiometric ratio of high purity bismuth tri-oxide and silicon di-oxide. The synthesized material was charged in the platinum crucible and then melted. The required rotation and pulling rate was optimized for BSO single crystal growth and good quality single crystal has been harvested after a time span of 5 days. Powder X-ray diffraction analysis confirms the parent crystallization phase of BSO. The experimentally studied mechanical behavior of the crystal is explained using various theoretical models. The anisotropic nature of the crystals is studied using Knoop indentation technique.

  12. Skylab experiments on semiconductors and alkali halides. [single crystal growth

    Science.gov (United States)

    Lundquist, C. A.

    1974-01-01

    The space processing experiments performed during the Skylab missions included one on single crystal growth of germanium selenide and telluride, one on pure and doped germanium crystals, two on pure and doped indium antimonide, one on gallium-indium-antimony systems, and one on a sodium chloride-sodium fluoride eutectic. In each experiment, three ampoules of sample were processed in the multipurpose electric furnace within the Skylab Materials Processing Facility. All were successful in varying degrees and gave important information about crystal growth removed from the effects of earth surface gravity.

  13. Is the methanation reaction over Ru single crystals structure dependent?

    DEFF Research Database (Denmark)

    Vendelbo, Søren Bastholm; Johansson, Martin; Nielsen, Jane Hvolbæk;

    2011-01-01

    The influence of monoatomic steps and defects on the methanation reaction over ruthenium has been investigated. The experiments are performed on a Ru(0 1 54) ruthenium single crystal, which contains one monoatomic step atom for each 27 terrace atoms. The methanation activity is measured at one ba...... front-side of the crystal is poisoned faster than the entire crystal containing more defects. We also observe that additional sputtering of the well-defined front-side increases the reactivity measured on the surface. Based on this, we conclude that the methanation reaction takes place...

  14. Single Crystal Growth of Zirconia Utilizing a Skull Melting Technique,

    Science.gov (United States)

    1979-08-01

    help eliminate many crystal growth problems. The flame-fusion apparatus was invented by A. Verneuil 3 over 75 years ago and has been used for growth of...AOAO2 23 OMEAIRDEVLOPENT CNT RI RIFISS AFB NY F /S .7/ NGLE CRYSTAL GROWTH OF Z RONA UT IXZIN A SKULL MELTING TE-SCUl AUG 79 A C MARSHALL, J A ADAMSK...Crucible-less synthesis 50. ABSTRACT (Ceefiw.. - eooe edi. ,.e.eimwd identiby Slek ~b.,) Investigation into the growth of single crystal materials are

  15. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    Science.gov (United States)

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T.

    2015-01-01

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  16. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    Energy Technology Data Exchange (ETDEWEB)

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

    2015-01-19

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  17. R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-12-15

    The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800

  18. Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    G. M. Khanduri

    2004-01-01

    Full Text Available The cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority carrier electrons at the basecollector heterojunction of the DHBT structure. Whereas, the base-collector homojunction of the SiGe SHBT structure, having a uniform 14%Ge profile in its base and collector, inhibits the formation of such a retarding potential barrier. The SHBT structure with a base-collector homojunction shows an Improved cutoff frequency at a high collector current density in comparison with conventional SiGe DHBT, which makes it more promising for high speed, scaled down, field-specific applications.

  19. Single Crystal Synthesis and STM Studies of High Temperature Superconductors

    Science.gov (United States)

    Barrientos, Alfonso

    1997-01-01

    This is a final report for the work initiated in September of 1994 under the grant NAG8-1085 - NASA/OMU, on the fabrication of bulk and single crystal synthesis, specific heat measuring and STM studies of high temperature superconductors. Efforts were made to fabricate bulk and single crystals of mercury based superconducting material. A systematic thermal analysis on the precursors for the corresponding oxides and carbonates were carried out to synthesized bulk samples. Bulk material was used as seed in an attempt to grow single crystals by a two-step self flux process. On the other hand bulk samples were characterized by x-ray diffraction, electrical resistivity and magnetic susceptibility, We studied the specific heat behavior in the range from 80 to 300 K. Some preliminary attempts were made to study the atomic morphology of our samples. As part of our efforts we built an ac susceptibility apparatus for measuring the transition temperature of our sintered samples.

  20. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

  1. Surface enhanced raman spectroscopy studies on triglycine sulphate single crystals

    Science.gov (United States)

    Parameswari, A.; Mohamed Asath, R.; Premkumar, R.; Milton Franklin Benial, A.

    2017-01-01

    Adsorption characteristics of triglycine sulphate (TGS) on silver (Ag) surface were investigated based on density functional theory calculations and surface enhanced Raman spectroscopy (SERS) technique. The single crystals of TGS were grown by slow evaporation method. Ag nanoparticles (Ag NPs) were prepared by solution combustion method and characterized. The calculated and observed structural parameters of TGS molecule were compared. Raman and SERS spectra for TGS single crystal were studied experimentally and validated theoretically. Frontier molecular orbitals (FMOs) analysis was carried out for TGS and TGS adsorbed on Ag surface. The second harmonic generation measurements confirm the nonlinear optical (NLO) activity of the TGS molecule. SERS spectral analysis reveals that the TGS adsorbed as tilted orientation on the silver surface. The theoretical and experimental results evidence the suitability of the grown TGS single crystal for optoelectronic applications.

  2. Corelli: Efficient single crystal diffraction with elastic discrimination

    Indian Academy of Sciences (India)

    Stephan Rosenkranz; Raymond Osborn

    2008-10-01

    Single crystal diffuse scattering provides one of the most powerful probes of short-range correlations on the 1-100 nm scale, which often are responsible for the extreme field response of many emerging phenomena of great interest. Accurate modeling of such complex disorder from diffuse scattering data however puts stringent experimental demands, requiring measurements over large volumes of reciprocal space with sufficient momentum and energy resolution. Here, we discuss the potential of the cross-correlation technique for efficient measurement of single crystal diffuse scattering with energy discrimination, as will be implemented in a novel instrument, Corelli. Utilizing full experiment simulations, we show that this technique readily leads up to a fifty-fold gain in efficiency, as compared to traditional methods, for measuring single crystal diffuse scattering over volumes of reciprocal space with elastic discrimination.

  3. Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

    Science.gov (United States)

    Markevich, V. P.; Peaker, A. R.; Lastovskii, S. B.; Murin, L. I.; Litvinov, V. V.; Emtsev, V. V.; Dobaczewski, L.

    2009-12-01

    Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300 K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals have also been investigated. It is argued that a radiation-induced electron trap with an energy level at about 110 meV below the conduction band edge (E110) can be associated with electron emission from an energy level of the Ge self-interstitial (IGe). The E110 trap is eliminated in the temperature range 150-200 K upon 15 min isochronal annealing. No other traps in the upper half of the gap emerge simultaneously with the disappearance of the E110 trap. It is argued that Ge self-interstitials become mobile at temperatures higher than 150 K and in oxygen-rich Ge interact with interstitial oxygen atoms (Oi). The resulting IGeOi complexes do not have energy levels in the upper half of the Ge gap. Diffusion and interaction of the IGeOi defects with interstitial oxygen atoms at T>50 °C result in the formation of IGeO2i complexes. In the most stable configuration the IGeO2i complex has orthorhombic (C2v) symmetry.

  4. Single crystal surface structure by bragg scattering

    DEFF Research Database (Denmark)

    Nielsen, Mogens

    1985-01-01

    X-ray diffraction is becoming an important tool in the measurements of surface structures. Single crystalline samples are used as in Low Energy Electron Diffraction (LEED)-studies. The X-ray technique is somewhat more involved due to the need of bright, collimated photon sources, in general...... synchrotron X-rays, and of very accurate angular settings in the ultrahigh-vacuum environment of the sample. We present the technique and discuss examples of experimental results....

  5. Crystal growth and characterization of new semiorganic nonlinear optical single crystals

    Science.gov (United States)

    Kulshrestha, Shobha; Shrivastava, A. K.

    2016-05-01

    An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40-45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm3, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.

  6. Modeling of elastic and plastic waves for HCP single crystals in a 3D formulation based on zinc single crystal

    Science.gov (United States)

    Krivosheina, Marina; Kobenko, Sergey; Tuch, Elena; Kozlova, Maria

    2016-11-01

    This paper investigates elastic and plastic waves in HCP single crystals through the numerical simulation of strain processes in anisotropic materials based on a zinc single crystal. Velocity profiles for compression waves in the back surfaces of single-crystal zinc plates with impact loading oriented in 0001 and 10 1 ¯0 are presented in this work as a part of results obtained in numerical simulations. The mathematical model implemented in this study reflects the following characteristics of the mechanical properties inherent in anisotropic (transtropic) materials: varying degree of anisotropy of elastic and plastic properties, which includes reverse anisotropy, dependence of distribution of all types of waves on the velocity orientation, and the anisotropy of compressibility. Another feature of elastic and plastic waves in HCP single crystals is that the shock wave does not split into an elastic precursor and "plastic" compression shock wave, which is inherent in zinc single crystals with loading oriented in 0001. The study compares numerical results obtained in a three-dimensional formulation with the results of velocity profiles from the back surfaces of target plates obtained in real experiments. These results demonstrate that the mathematical model is capable of describing the properties of the above-mentioned anisotropic (transtropic) materials.

  7. Aluminum-rich mesoporous MFI - type zeolite single crystals

    DEFF Research Database (Denmark)

    Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid

    2005-01-01

    . With this technique, only zeolites with relatively low Al contents were reported (Si/Al ratio about 100). In this work, the preparation of aluminum-rich mesoporous MFI-type zeolite single crystals (Si/Al similar to 16-50) using aluminum isopropoxide as the aluminum Source is reported for the first time. All samples......Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source...

  8. Apparatus And Method For Producing Single Crystal Metallic Objects

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Shyh-Chin (Latham, NY); Gigliotti, Jr., Michael Francis X. (Scotia, NY); Rutkowski, Stephen Francis (Duanesburg, NY); Petterson, Roger John (Fultonville, NY); Svec, Paul Steven (Scotia, NY)

    2006-03-14

    A mold is provided for enabling casting of single crystal metallic articles including a part-defining cavity, a sorter passage positioned vertically beneath and in fluid communication with the part-defining cavity, and a seed cavity positioned vertically beneath and in fluid communication with the sorter passage. The sorter passage includes a shape suitable for encouraging a single crystal structure in solidifying molten metal. Additionally, a portion of the mold between the sorter passage and the part-defining cavity includes a notch for facilitating breakage of a cast article proximate the notch during thermal stress build-up, so as to prevent mold breakage or the inclusion of part defects.

  9. Insights into microstructural evolution and polycrystalline compounds formation from Pd Ge thin films

    Science.gov (United States)

    Chen, Zhiwen; Shek, C. H.; Lai, J. K. L.

    2005-04-01

    Polycrystalline Pd-Ge thin films, prepared on freshly cleaved single crystal NaCl (1 0 0) substrate by evaporation techniques, were characterized for their composition, morphologies, and crystalline structure by transmission electron microscopy (TEM). The experimental results indicated that the formation of Pd 2Ge and PdGe compounds dominated at low annealing temperatures, and it also affected the crystallization of amorphous Ge. The reactions of Pd and Ge are sensitively dependent on the annealing temperatures and the thickness ratio of Pd and Ge films. The crystallization of amorphous Ge and the reactions of Pd and Ge are mutually competitive in polycrystalline Pd-Ge thin films. The grain nucleation, growth, and aggregation in Pd-Ge thin films during processing are discussed in terms of the fundamental kinetic processes.

  10. Insights into microstructural evolution and polycrystalline compounds formation from Pd-Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Zhiwen [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong (China)]. E-mail: cnzwchen@yahoo.com.cn; Shek, C.H. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong (China); Lai, J.K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong (China)

    2005-04-15

    Polycrystalline Pd-Ge thin films, prepared on freshly cleaved single crystal NaCl (1 0 0) substrate by evaporation techniques, were characterized for their composition, morphologies, and crystalline structure by transmission electron microscopy (TEM). The experimental results indicated that the formation of Pd{sub 2}Ge and PdGe compounds dominated at low annealing temperatures, and it also affected the crystallization of amorphous Ge. The reactions of Pd and Ge are sensitively dependent on the annealing temperatures and the thickness ratio of Pd and Ge films. The crystallization of amorphous Ge and the reactions of Pd and Ge are mutually competitive in polycrystalline Pd-Ge thin films. The grain nucleation, growth, and aggregation in Pd-Ge thin films during processing are discussed in terms of the fundamental kinetic processes.

  11. Broadband Single-Shot Electron Spectrometer for GeV-Class Laser Plasma Based Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, K.; Wan, W.; Ybarrolaza, N.; Syversrud, D.; Wallig, J.; Leemans, W.P.

    2008-05-01

    Laser-plasma-based accelerators can provide electrons over a broad energy range and/or with large momentum spread. The electron beam energy distribution can be controlled via accurate control of laser and plasma properties, and beams with energies ranging from'0.5 to 1000 MeV have been observed. Measuring these energy distributions in a single shot requires the use of a diagnostic with large momentum acceptance and, ideally, sufficient resolution to accurately measure energy spread in the case of narrow energy spread. Such a broadband single-shot electron magnetic spectrometer for GeV-class laser-plasma-based accelerators has been developed at Lawrence Berkeley National Laboratory. A detailed description of the hardware and the design concept is presented, as well as a performance evaluation of the spectrometer. The spectrometer covered electron beam energies raging from 0.01 to 1.1 GeV in a single shot, and enabled the simultaneous measurement of the laser properties at the exit of the accelerator through the use of a sufficiently large pole gap. Based on measured field maps and 3rd-order transport analysis, a few percent-level resolution and determination of the absolute energy were achieved over the entire energy range. Laser-plasma-based accelerator experiments demonstrated the capability of the spectrometer as a diagnostic and its suitability for such a broadband electron source.

  12. Growth of Solid Solution Single Crystals

    Science.gov (United States)

    Lehoczky, Sandor L.; Szofran, F. R.; Gillies, Donald C.

    2001-01-01

    The solidification of a solid solution semiconductor, having a wide separation between liquidus and solidus has been extensively studied in ground based, high magnetic field and Spacelab experiments. Two alloys of mercury cadmium telluride have been studied; with 80.0 mole percent of HgTe and 84.8 mole percent of HgTe respectively, the remainder being cadmium telluride. Such alloys are extremely difficult to grow by directional solidification on earth due to high solutal and thermal density differences that give rise to fluid flow and consequent loss of interface shape and composition. Diffusion controlled growth is therefore impossible to achieve in conventional directional solidification. The ground based experiments consisted of growing crystals in several different configurations of heat pipe furnaces, NASA's Advanced Automated Directional Solidification Furnace (AADSF), and a similar furnace incorporated in a superconducting magnet capable of operating at up to 5T. The first microgravity experiment took place during the flight of STS-62 in March 1994, with the AADSF installed on the second United States Microgravity Payload (USMP-2). The alloy was solidified at 3/4 inch per day over a 9 day period, and for the first time a detailed evaluation was performed correlating composition variations to measured residual acceleration. The second flight experiment took place in the fourth United States Microgravity Payload Mission (USMP-4) in November 1997. Due to contamination of the furnace system, analysis shows that the conditions prevailing during the experiment were quite different from the requirements requested prior to the mission. The results indicate that the sample did accomplish the desired objectives.

  13. Role of crystal orientation on chemical mechanical polishing of single crystal copper

    Science.gov (United States)

    Zhu, Aibin; He, Dayong; Luo, Wencheng; Liu, Yangyang

    2016-11-01

    The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[-211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[-211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.

  14. Growth and characterization of morpholinium dihydrogenphosphate single crystal

    Science.gov (United States)

    Babu, D. Rajan; Arul, H.; Vizhi, R. Ezhil

    2016-10-01

    Morpholinium dihydrogenphosphate (MDP) single crystals were synthesized, and were subsequently grown by controlled evaporation technique at room temperature for nonlinear optical applications. The grown crystal, which belongs to the monoclinic system with the space group P21, was subjected to single crystal X-ray diffraction to confirm the structure. UV-vis-NIR spectroscopy was done on the grown crystal and it showed good optical transparency in the entire visible region with a minimum cut-off wavelength of 289 nm. The optical band gap was computed as a function of photon energy using Tauc's plot. The refractive index of the grown crystal was determined using a Metricon Prism Coupler. The thermogravimetric (TG) and differential thermal analysis (DTA) traces disclosed the thermal stability of the compound. The mechanical strength of the crystal was investigated by a Vickers microhardness tester. Dielectric constant and dielectric loss were calculated and plotted as a function of frequency at different temperatures. The second harmonic conversion efficiency was determined using the Kurtz-Perry powder technique, and the efficiency was found to be 1.2 times greater than that of standard KDP.

  15. Experimental Study of Single Vertex (e-.-e+) Pair Creation in a Crystal

    CERN Multimedia

    2002-01-01

    This experiment will study the newly predicted process of e|--e|+ pair production by high energy photons incident along major axial direction of a single crystal. This process is based upon the well known channelling properties of negatively charged particles along atomic rows of a crystal. The e|--e|+ pair creation may proceed in a one-step process, without violating energy and momentum conversation laws, due to the lowering of the total energy of the channelled electron (Fig. 1). \\\\ \\\\ The pair creation rate should increase with increasing photon energies (above a threshold of a few GeV) and largely exceed the Bethe-Heitler process rate for photon energies of a few tens of GeV. It is also expected that the created particles share the photon energy nearly equally, in contrast with the rather flat energy distribution associated with the Bethe-Heitler process. \\\\ \\\\ The experimental set-up (Fig. 2) is designed for the study of those two features: photon energy dependence of the pair creation rate, and energy d...

  16. Studies on growth, crystal structure and characterization of novel organic nicotinium trifluoroacetate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)

    2011-09-15

    Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.

  17. Decrease of bulk pinning strength in deoxygenated YBCO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, A.J.; Bekeris, V. [Buenos Aires Univ. (Argentina). Lab. de Bajas Temperaturas

    2000-07-01

    We measured the first and third harmonics of the complex AC susceptibility in YBCO single crystals with different oxygen contents (6.5 {<=} x {<=} 7). The amplitude of the AC field was varied in presence of an external dc field both applied parallel to the c-axis of the crystals. We give evidence that deoxygenation leads to a reduction of the bulk pinning strength and consequently to a stronger contribution of geometrical barriers. These results support the recently reported investigations showing that deoxygenation makes the YBCO crystals more anisotropic reducing the effective bulk pinning for quasi two-dimensional vortices. We also show measurements for the same crystals with the AC field applied perpendicular to the c-axis. (orig.)

  18. Mg-ion indiffusion of lithium niobate single crystal fiber

    Institute of Scientific and Technical Information of China (English)

    阙文修; 姚熹; 霍玉晶

    1995-01-01

    A core-cladding waveguide structure of lithium niobate single crystal fiber with different refractive index profiles has been obtained by using an Mg-ion indiffusion process. The propagation loss of the dadded crystal fiber is measured to be 14 times as low as that of the undadded crystal fibers. Mechanisms of Mg-ion indiffusion and reasons of lattice distortion are analyzed and discussed. It is found by X-ray diffraction analysis as well as scanning electron microscopy that MgO-rich layer in the magnesium diffused surface exhibits the crystal structure of a new compound from the Li-Mg-Nb-O ternary system. It is proposed, for the first time, that this new compound in MgO-rich layer is the real source of Mg-ion indiffusion lithium niobate.

  19. Growth and characterisation of gadolinium samarium oxalate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Korah, I. [Dept. of Physics, St. George College, Aruvithura - 686122, Kerala (India); Joseph, C. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam - 686562 (India); Ittyachan, M.A. [Dept. of Physics, Cochin University of Science and Technology, Cochin (India)

    2007-10-15

    Single crystals of Gadolinium Samarium Oxalate (GSO) are grown by gel method. The crystals are pale yellowish in colour. Morphology and size of the crystals are found to depend on pH of the medium, gel density, concentration of the reactants and acidity of the feed solution. The crystallinity of the grown sample was confirmed by X-ray diffraction studies and the lattice parameters were determined. X-ray diffractogram shows well defined peaks. IR spectrum confirms the presence of water molecules and carboxylic group. EDAX analysis confirms the presence of Gd and Sm in the sample. The thermal decomposition behaviour of the crystal was analysed using TGA and DTA studies. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound

    Energy Technology Data Exchange (ETDEWEB)

    Gil, A., E-mail: a.gil@ajd.czest.pl [Faculty of Mathematics and Natural Sciences, Jan Długosz University in Częstochowa, Armii Krajowej 13/15, 42-200 Częstochowa (Poland); Hoser, A. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14-109 Berlin (Germany); Penc, B.; Szytuła, A. [M. Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków (Poland)

    2013-10-15

    The crystal and magnetic structure of polycrystalline TbFe{sub 0.25}Ge{sub 2} sample have been determined. X-ray and neutron diffraction studies indicate that this compound has the orthorhombic CeNiSi{sub 2}-type crystal structure (space group Cmcm). The magnetic ordering, based on the neutron diffraction data in low temperature, is described by two components: a collinear antiferromagnetic G-type and a cosine-wave modulated one. In the collinear G-type structure the Tb magnetic moment is equal to 3.81(5) µ{sub B} and it is parallel to the c-axis. The modulated structure is described by the propagation vector k=(0.460(8), 0, 0.305(1)), the Tb magnetic moment equals 7.75(8) µ{sub B,} lies in b–c and forms an angle 23(2)° with the c-axis. The collinear component decreases to zero at 22.6 K while the modulated one at 190.8 K. - Highlights: • We determine crystal and magnetic structure of TbFe{sub 0.25}Ge{sub 2} compound. • We compare the results with other TbT{sub x}Ge{sub 2} compounds. • We observe the complex magnetic structure in TbFe{sub 0.25}Ge{sub 2} with two components: collinear and cosine-wave modulated. • T (3d) element have got significant influence on the interactions in Tb sublattice.

  1. Compression Deformation Mechanisms at the Nanoscale in Magnesium Single Crystal

    Institute of Scientific and Technical Information of China (English)

    Yafang GUO; Xiaozhi TANG; Yuesheng WANG; Zhengdao WANG; Sidney YIP

    2013-01-01

    The dominant deformation mode at low temperatures for magnesium and its alloys is generally regarded to be twinning because of the hcp crystal structure.More recently,the phenomenon of a "loss" of the twins has been reported in microcompression experiments of the magnesium single crystals.Molecular dynamics simulation of compression deformation shows that the pyramidal slip dominates compression behavior at the nanoscale.No compression twins are observed at different temperatures at different loadings and boundary conditions.This is explained by the analyses,that is,the {10(1-)2} and {101-1} twins can be activated under c-axis tension,while compression twins will not occur when the c/a ratio of the hcp metal is below (/)3.Our theoretical and simulation results are consistent with recent microcompression experiments of the magnesium (0001) single crystals.

  2. Thermal properties of single-walled carbon nanotube crystal

    Institute of Scientific and Technical Information of China (English)

    Hu Li-Jun; Liu Ji; Liu Zheng; Qiu Cai-Yu; Zhou Hai-Qing; Sun Lian-Feng

    2011-01-01

    In this work,the thermal properties of a single-walled carbon nanotube (SWCNT) crystal are studied. The thermal conductivity of the SWCNT crystal is found to have a linear dependence on temperature in the temperature range from 1.9 K to 100.0 K. In addition,a peak (658 W/mK) is found at a temperature of about 100.0 K. The thermal conductivity decreases gradually to a value of 480 W/mK and keeps almost a constant in the temperature range from 100.0 K to 300.0 K. Meanwhile,the specific heat shows an obvious linear relationship with temperature in the temperature range from 1.9 K to 300.0 K. We discuss the possible mechanisms for these unique thermal properties of the single-walled carbon nanotube crystal.

  3. Atomistic simulation of shocks in single crystal and polycrystalline Ta

    Science.gov (United States)

    Bringa, E. M.; Higginbotham, A.; Park, N.; Tang, Y.; Suggit, M.; Mogni, G.; Ruestes, C. J.; Hawreliak, J.; Erhart, P.; Meyers, M. A.; Wark, J. S.

    2011-06-01

    Non-equilibrium molecular dynamics (MD) simulations of shocks in Ta single crystals and polycrystals were carried out using up to 360 million atoms. Several EAM and FS type potentials were tested up to 150 GPa, with varying success reproducing the Hugoniot and the behavior of elastic constants under pressure. Phonon modes were studied to exclude possible plasticity nucleation by soft-phonon modes, as observed in MD simulations of Cu crystals. The effect of loading rise time in the resulting microstructure was studied for ramps up to 0.2 ns long. Dislocation activity was not observed in single crystals, unless there were defects acting as dislocation sources above a certain pressure. E.M.B. was funded by CONICET, Agencia Nacional de Ciencia y Tecnología (PICT2008-1325), and a Royal Society International Joint Project award.

  4. Singly-resonant optical parametric oscillator based on KTA crystal

    Indian Academy of Sciences (India)

    S Das; S Gangopadhyay; C Ghosh; G C Bhar

    2005-01-01

    Tunable mid-infra-red radiation by singly resonant optical parametric oscillation based on KTA crystal pumped by multi-axial Gaussian shape beam from Q-switched Nd:YAG laser has been demonstrated. Threshold energy of oscillation at different idler wavelengths for different cavity length has been demonstrated. Single pass conversion efficiency of incident pump energy to infra-red wavelength has also been measured.

  5. Single particle detection in CMOS compatible photonic crystal nanobeam cavities.

    Science.gov (United States)

    Quan, Qimin; Floyd, Daniel L; Burgess, Ian B; Deotare, Parag B; Frank, Ian W; Tang, Sindy K Y; Ilic, Rob; Loncar, Marko

    2013-12-30

    We report the label-free detection of single particles using photonic crystal nanobeam cavities fabricated in silicon-on-insulator platform, and embedded inside microfluidic channels fabricated in poly-dimethylsiloxane (PDMS). Our system operates in the telecommunication wavelength band, thus leveraging the widely available, robust and tunable telecom laser sources. Using this approach, we demonstrated the detection of polystyrene nanoparticles with dimensions down to 12.5nm in radius. Furthermore, binding events of a single streptavidin molecule have been observed.

  6. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-04-01

    With the soaring advancement of organolead halide perovskite solar cells rising from a power conversion efficiency of merely 3% to more than 22% shortly in five years, researchers’ interests on this big material family have been greatly spurred. So far, both in-depth studies on the fundamental properties of organolead halide perovskites and their extended applications such as photodetectors, light emitting diodes, and lasing have been intensively reported. The great successes have been ascribed to various superior properties of organolead halide hybrid perovskites such as long carrier lifetimes, high carrier mobility, and solution-processable high quality thin films, as will be discussed in Chapter 1. Notably, most of these studies have been limited to their polycrystalline thin films. Single crystals, as a counter form of polycrystals, have no grain boundaries and higher crystallinity, and thus less defects. These characteristics gift single crystals with superior optical, electrical, and mechanical properties, which will be discussed in Chapter 2. For example, organolead halide perovskite single crystals have been reported with much longer carrier lifetimes and higher carrier mobilities, which are especially intriguing for optoelectronic applications. Besides their superior optoelectronic properties, organolead halide perovskites have shown large composition versatility, especially their organic components, which can be controlled to effectively adjust their crystal structures and further fundamental properties. Single crystals are an ideal platform for such composition-structure-property study since a uniform structure with homogeneous compositions and without distraction from grain boundaries as well as excess defects can provide unambiguously information of material properties. As a major part of work of this dissertation, explorative work on the composition-structure-property study of organic-cation-alloyed organolead halide perovskites using their single

  7. Angular correlation of annihilation photons in ice single crystals

    DEFF Research Database (Denmark)

    Mogensen, O. E.; Kvajic, G.; Eldrup, Morten Mostgaard

    1971-01-01

    Linear-slit angular-correlation curves were obtained at - 148 °C for the [0001], [10¯10], and [11¯20] directions in single crystals of ice. Besides the narrow central peak, pronounced narrow side peaks were also observed. They occurred at angles θ=2πℏgz/mc, where gz is the projection of reciproca...

  8. Coupling of single quantum dots to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian

    . An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...

  9. Transverse Mode Multi-Resonant Single Crystal Transducer

    Science.gov (United States)

    Snook, Kevin A. (Inventor); Liang, Yu (Inventor); Luo, Jun (Inventor); Hackenberger, Wesley S. (Inventor); Sahul, Raffi (Inventor)

    2015-01-01

    A transducer is disclosed that includes a multiply resonant composite, the composite having a resonator bar of a piezoelectric single crystal configured in a d(sub 32) transverse length-extensional resonance mode having a crystallographic orientation set such that the thickness axis is in the (110) family and resonance direction is the (001) family.

  10. Some Debye temperatures from single-crystal elastic constant data

    Science.gov (United States)

    Robie, R.A.; Edwards, J.L.

    1966-01-01

    The mean velocity of sound has been calculated for 14 crystalline solids by using the best recent values of their single-crystal elastic stiffness constants. These mean sound velocities have been used to obtain the elastic Debye temperatures ??De for these materials. Models of the three wave velocity surfaces for calcite are illustrated. ?? 1966 The American Institute of Physics.

  11. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  12. Field-effect transistors on tetracene single crystals

    NARCIS (Netherlands)

    De Boer, R.W.I.; Klapwijk, T.M.; Morpurgo, A.F

    2003-01-01

    We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm2/V s. The nonmonotonous temperature dependence of the mobility, its weak g

  13. Three-dimensional charge transport in organic semiconductor single crystals.

    Science.gov (United States)

    He, Tao; Zhang, Xiying; Jia, Jiong; Li, Yexin; Tao, Xutang

    2012-04-24

    Three-dimensional charge transport anisotropy in organic semiconductor single crystals - both plates and rods (above and below, respectively, in the figure) - is measured in well-performing organic field-effect transistors for the first time. The results provide an excellent model for molecular design and device preparation that leads to good performance.

  14. Single-crystal semiconductor films grown on foreign substrates

    Science.gov (United States)

    Vohl, P.

    1966-01-01

    Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.

  15. Low field investigations of single crystal Bi(2212): DC magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, G.; Murphy, S.D.; Bhagat, S.M. (Center for Superconductivity Research and Dept. of Physics and Astronomy, Univ. of Maryland, College Park (USA))

    1989-12-01

    DC Magnetization measurements on micaceous Bi(2212) single crystals suggest that; 1. for T< or approx.25 K the material is a bulk Superconductor (SC), 2. as T is increased, the interlayer coupling weakens, until for T> or approx.55 K the lamina become independent. (orig.).

  16. Coupling of single quantum dots to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian;

    . An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...

  17. TOPICAL REVIEW: Organic field-effect transistors using single crystals

    Science.gov (United States)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-04-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm2 Vs-1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  18. Hopping magnetotransport of the band-gap tuning Cu2Zn(Sn x Ge1-x )Se4 crystals

    Science.gov (United States)

    Lähderanta, E.; Hajdeu-Chicarosh, E.; Shakhov, M. A.; Guc, M.; Bodnar, I. V.; Arushanov, E.; Lisunov, K. G.

    2016-11-01

    Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x  =  0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x  =  0.47. Magnetoresistance (MR) of CZTGeSe with x  =  0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x  =  0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B  =  0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) \\propto B 2 is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x  =  0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.

  19. Hopping magnetotransport of the band-gap tuning Cu2Zn(Sn x Ge1-x )Se4 crystals.

    Science.gov (United States)

    Lähderanta, E; Hajdeu-Chicarosh, E; Shakhov, M A; Guc, M; Bodnar, I V; Arushanov, E; Lisunov, K G

    2016-11-16

    Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x  =  0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x  =  0.47. Magnetoresistance (MR) of CZTGeSe with x  =  0.26, 0.47 and 0.64 is positive (pMR) in all measured fields of B up to 20 T at any T between ~40-320 K, whereas MR of samples with x  =  0 and 1 contains a negative contribution (nMR). The dependence of ρ(T) at B  =  0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200-320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The pMR law of lnρ(B) [Formula: see text] B (2) is observed in both hopping conductivity regimes above, provided that the nMR contribution is absent or saturated. Analysis of the ρ(T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, lying close to x  =  0.64, correspond to the minimum of a lattice disorder along with the maximum of DOS and of the acceptor concentration, as well as a highest proximity to the metal-insulator transition.

  20. Coherent Pair Production by Photons in the 20-170 GeV Energy Range Incident on Crystals and Birefringence

    CERN Document Server

    Apyan, A; Badelek, B; Ballestrero, S; Biino, C; Birol, I; Cenci, P; Connell, S H; Eichblatt, S; Fonseca, T; Freund, A; Gorini, B; Groess, R; Ispirian, K; Ketel, T; Kononets, Yu V; López, A; Mangiarotti, A; Sellschop, J P Friedel; Shieh, M; Sona, P; Strakhovenko, V M; Uggerhøj, Erik; Uggerhøj, U; Van Rens, B; Velasco, M; Vilakazi, Z Z; Wessely, O; Ünel, G; Kononets, Yu.V.

    2003-01-01

    The cross section for coherent pair production by linearly polarised photons in the 20-170 GeV energy range was measured for photon aligned incidence on ultra-high quality diamond and germanium crystals. The theoretical description of coherent bremsstrahlung and coherent pair production phenomena is an area of active theoretical debate and development. However, under our experimental conditions, the theory predicted the combined cross section and polarisation experimental observables very well indeed. In macroscopic terms, our experiment measured a birefringence effect in pair production in a crystal. This study of this effect also constituted a measurement of the energy dependent linear polarisation of photons produced by coherent bremsstrahlung in aligned crystals. New technologies for manipulating high energy photon beams can be realised based on an improved understanding of QED phenomena at these energies. In particular, this experiment demonstrates an efficient new polarimetry technique. The pair product...

  1. Single Intermediate Vector Boson Production in $e^+ e^-$ collisions at $\\sqrt{s}$ = 183 and 189 GeV

    CERN Document Server

    Abreu, P.; Adye, T.; Adzic, P.; Ajinenko, I.; Albrecht, Z.; Alderweireld, T.; Alekseev, G.D.; Alemany, R.; Allmendinger, T.; Allport, P.P.; Almehed, S.; Amaldi, U.; Amapane, N.; Amato, S.; Anashkin, E.; Anassontzis, E.G.; Andersson, P.; Andreazza, A.; Andringa, S.; Anjos, N.; Antilogus, P.; Apel, W.D.; Arnoud, Y.; Asman, B.; Augustin, J.E.; Augustinus, A.; Baillon, P.; Ballestrero, A.; Bambade, P.; Barao, F.; Barbiellini, G.; Barbier, R.; Bardin, Dmitri Yu.; Barker, G.J.; Baroncelli, A.; Battaglia, M.; Baubillier, M.; Becks, K.H.; Begalli, M.; Behrmann, A.; Bellunato, T.; Belokopytov, Yu.; Benekos, N.C.; Benvenuti, A.C.; Berat, C.; Berggren, M.; Berntzon, L.; Bertrand, D.; Besancon, M.; Besson, N.; Bilenky, Mikhail S.; Bloch, D.; Blom, H.M.; Bol, L.; Bonesini, M.; Boonekamp, M.; Booth, P.S.L.; Borisov, G.; Bosio, C.; Botner, O.; Boudinov, E.; Bouquet, B.; Bowcock, T.J.V.; Boyko, I.; Bozovic, I.; Bozzo, M.; Bracko, M.; Branchini, P.; Brenner, R.A.; Bruckman, P.; Brunet, J.M.; Bugge, L.; Buschmann, P.; Caccia, M.; Calvi, M.; Camporesi, T.; Canale, V.; Carena, F.; Carroll, L.; Caso, C.; Castillo Gimenez, M.V.; Cattai, A.; Cavallo, F.R.; Chapkin, M.; Charpentier, P.; Checchia, P.; Chelkov, G.A.; Chierici, R.; Chliapnikov, P.; Chochula, P.; Chorowicz, V.; Chudoba, J.; Cieslik, K.; Collins, P.; Contri, R.; Cortina, E.; Cosme, G.; Cossutti, F.; Costa, M.; Crawley, H.B.; Crennell, D.; Croix, J.; Crosetti, G.; Cuevas Maestro, J.; Czellar, S.; D'Hondt, J.; Dalmau, J.; Davenport, M.; Da Silva, W.; Della Ricca, G.; Delpierre, P.; Demaria, N.; De Angelis, A.; De Boer, W.; De Clercq, C.; De Lotto, B.; De Min, A.; De Paula, L.; Dijkstra, H.; Di Ciaccio, L.; Doroba, K.; Dracos, M.; Drees, J.; Dris, M.; Eigen, G.; Ekelof, T.; Ellert, M.; Elsing, M.; Engel, J.P.; Espirito Santo, M.C.; Fanourakis, G.; Fassouliotis, D.; Feindt, M.; Fernandez, J.; Ferrer, A.; Ferrer-Ribas, E.; Ferro, F.; Firestone, A.; Flagmeyer, U.; Foeth, H.; Fokitis, E.; Fontanelli, F.; Franek, B.; Frodesen, A.G.; Fruhwirth, R.; Fulda-Quenzer, F.; Fuster, J.; Galloni, A.; Gamba, D.; Gamblin, S.; Gandelman, M.; Garcia, C.; Gaspar, C.; Gaspar, M.; Gasparini, U.; Gavillet, P.; Gazis, Evangelos; Gele, D.; Geralis, T.; Ghodbane, N.; Gil Botella, Ines; Glege, F.; Gokieli, R.; Golob, B.; Gomez-Ceballos, G.; Goncalves, P.; Gonzalez Caballero, I.; Gopal, G.; Gorn, L.; Gouz, Yu.; Gracco, V.; Grahl, J.; Graziani, E.; Grosdidier, G.; Grzelak, K.; Guy, J.; Haag, C.; Hahn, F.; Hahn, S.; Haider, S.; Hallgren, A.; Hamacher, K.; Hansen, J.; Harris, F.J.; Haug, S.; Hauler, F.; Hedberg, V.; Heising, S.; Hernandez, J.J.; Herquet, P.; Herr, H.; Hertz, O.; Higon, E.; Holmgren, S.O.; Holt, P.J.; Hoorelbeke, S.; Houlden, M.; Hrubec, J.; Hughes, G.J.; Hultqvist, K.; Jackson, John Neil; Jacobsson, R.; Jalocha, P.; Jarlskog, C.; Jarlskog, G.; Jarry, P.; Jean-Marie, B.; Jeans, D.; Johansson, Erik Karl; Jonsson, P.; Joram, C.; Juillot, P.; Jungermann, L.; Kapusta, Frederic; Karafasoulis, K.; Katsanevas, S.; Katsoufis, E.C.; Keranen, R.; Kernel, G.; Kersevan, B.P.; Khokhlov, Yu.A.; Khomenko, B.A.; Khovanski, N.N.; Kiiskinen, A.; King, B.; Kinvig, A.; Kjaer, N.J.; Klapp, O.; Kluit, P.; Kokkinias, P.; Kostioukhine, V.; Kourkoumelis, C.; Kouznetsov, O.; Krammer, M.; Kriznic, E.; Krumstein, Z.; Kubinec, P.; Kucharczyk, M.; Kurowska, J.; Lamsa, J.W.; Laugier, J.P.; Leder, G.; Ledroit, Fabienne; Leinonen, L.; Leisos, A.; Leitner, R.; Lenzen, G.; Lepeltier, V.; Lesiak, T.; Lethuillier, M.; Libby, J.; Liebig, W.; Liko, D.; Lipniacka, A.; Lippi, I.; Loken, J.G.; Lopes, J.H.; Lopez, J.M.; Lopez-Fernandez, R.; Loukas, D.; Lutz, P.; Lyons, L.; MacNaughton, J.; Mahon, J.R.; Maio, A.; Malek, A.; Maltezos, S.; Malychev, V.; Mandl, F.; Marco, J.; Marco, R.; Marechal, B.; Margoni, M.; Marin, J.C.; Mariotti, C.; Markou, A.; Martinez-Rivero, C.; Marti i Garcia, S.; Masik, J.; Mastroyiannopoulos, N.; Matorras, F.; Matteuzzi, C.; Matthiae, G.; Mazzucato, F.; Mazzucato, M.; McCubbin, M.; McKay, R.; McNulty, R.; McPherson, G.; Merle, E.; Meroni, C.; Meyer, W.T.; Miagkov, A.; Migliore, E.; Mirabito, L.; Mitaroff, W.A.; Mjoernmark, U.; Moa, T.; Moch, M.; Monig, Klaus; Monge, M.R.; Montenegro, J.; Moraes, D.; Morettini, P.; Morton, G.; Mueller, U.; Muenich, K.; Mulders, M.; Mundim, L.M.; Murray, W.J.; Muryn, B.; Myatt, G.; Myklebust, T.; Nassiakou, M.; Navarria, F.L.; Nawrocki, K.; Negri, P.; Nemecek, S.; Neufeld, N.; Nicolaidou, R.; Niezurawski, P.; Nikolenko, M.; Nomokonov, V.; Nygren, A.; Obraztsov, V.; Olshevski, A.G.; Onofre, A.; Orava, R.; Osterberg, K.; Ouraou, A.; Oyanguren, A.; Paganoni, M.; Paiano, S.; Pain, R.; Paiva, R.; Palacios, J.; Palka, H.; Papadopoulou, T.D.; Pape, L.; Parkes, C.; Parodi, F.; Parzefall, U.; Passeri, A.; Passon, O.; Pavel, T.; Pegoraro, M.; Peralta, L.; Perepelitsa, V.; Pernicka, M.; Perrotta, A.; Petridou, C.; Petrolini, A.; Phillips, H.T.; Pierre, F.; Pimenta, M.; Piotto, E.; Podobnik, T.; Poireau, V.; Pol, M.E.; Polok, G.; Poropat, P.; Pozdniakov, V.; Privitera, P.; Pukhaeva, N.; Pullia, A.; Radojicic, D.; Ragazzi, S.; Rahmani, H.; Ratoff, P.N.; Read, Alexander L.; Rebecchi, P.; Redaelli, Nicola Giuseppe; Regler, M.; Rehn, J.; Reid, D.; Reinhardt, R.; Renton, P.B.; Resvanis, L.K.; Richard, F.; Ridky, J.; Rinaudo, G.; Ripp-Baudot, Isabelle; Romero, A.; Ronchese, P.; Rosenberg, E.I.; Rosinsky, P.; Roudeau, P.; Rovelli, T.; Ruhlmann-Kleider, V.; Ruiz, A.; Saarikko, H.; Sacquin, Y.; Sadovsky, A.; Sajot, G.; Salmi, L.; Salt, J.; Sampsonidis, D.; Sannino, M.; Savoy-Navarro, A.; Schwanda, C.; Schwemling, P.; Schwering, B.; Schwickerath, U.; Scuri, Fabrizio; Seager, P.; Sedykh, Y.; Segar, A.M.; Sekulin, R.; Sette, G.; Shellard, R.C.; Siebel, M.; Simard, L.; Simonetto, F.; Sisakian, A.N.; Smadja, G.; Smirnov, N.; Smirnova, O.; Smith, G.R.; Sokolov, A.; Sopczak, A.; Sosnowski, R.; Spassov, T.; Spiriti, E.; Stanescu, C.; Stanitzki, M.; Stevenson, K.; Stocchi, A.; Strauss, J.; Strub, R.; Stugu, B.; Szczekowski, M.; Szeptycka, M.; Tabarelli, T.; Taffard, A.; Tegenfeldt, F.; Terranova, F.; Timmermans, Jan; Tinti, N.; Tkatchev, L.G.; Tobin, M.; Todorova, S.; Tome, B.; Tonazzo, A.; Tortora, L.; Tortosa, P.; Treille, D.; Tristram, G.; Trochimczuk, M.; Troncon, C.; Turluer, M.L.; Tyapkin, I.A.; Tyapkin, P.; Tzamarias, S.; Ullaland, O.; Uvarov, V.; Valenti, G.; Vallazza, E.; Van Dam, Piet; Van den Boeck, W.; Van Eldik, J.; Van Lysebetten, A.; Van Remortel, N.; Van Vulpen, I.; Vegni, G.; Ventura, L.; Venus, W.; Verbeure, F.; Verdier, P.; Verlato, M.; Vertogradov, L.S.; Verzi, V.; Vilanova, D.; Vitale, L.; Vlasov, E.; Vodopianov, A.S.; Voulgaris, G.; Vrba, V.; Wahlen, H.; Washbrook, A.J.; Weiser, C.; Wicke, D.; Wickens, J.H.; Wilkinson, G.R.; Winter, M.; Witek, M.; Wolf, G.; Yi, J.; Yushchenko, O.; Zalewska, A.; Zalewski, P.; Zavrtanik, D.; Zevgolatakos, E.; Zimine, N.I.; Zintchenko, A.; Zoller, P.; Zumerle, G.; Zupan, M.; Krammer, Manfred

    2001-01-01

    The cross-sections for the production of single charged and neutral intermediate vector bosons were measured using integrated luminosities of 52~pb$^{-1}$ and 154~pb$^{-1}$ collected by the DELPHI experiment at centre-of-mass energies of 182.6~GeV and 188.6~GeV, respectively. The cross-sections for the reactions were determined in limited kinematic regions. The results found are in agreement with the Standard Model predictions for these channels.

  2. Single spin asymmetry AN in polarized proton–proton elastic scattering √s=200 GeV

    NARCIS (Netherlands)

    Adamczyk, L.; Agakishiev, G.; La Pointe, S.L.; Zyzak, M.

    2013-01-01

    We report a high precision measurement of the transverse single spin asymmetry AN at the center of mass energy √s = 200 GeV in elastic proton–proton scattering by the STAR experiment at RHIC. The AN was measured in the four-momentum transfer squared t range 0.003 |t| 0.035 (GeV/c)2, the region of a

  3. Shaped crystal growth of langasite-type piezoelectric single crystals and their physical properties.

    Science.gov (United States)

    Yokota, Yuui; Yoshikawa, Akira; Futami, Yoshisuke; Sato, Masato; Tota, Kazushige; Onodera, Ko; Yanagida, Takayuki

    2012-09-01

    We have grown shape-controlled langasite-type crystals by the micro-pulling-down (μ-PD) method. Columnar shaped La(3)Ta(0.5)Ga(5.5)O(14) (LTG), Ca(3)NbGa(3)Si(2)O(14) (CNGS), Ca(3)TaGa(3)Si(2)O(14) (CTGS), Sr(3)NbGa(3)Si(2)O(14) (SNGS), and Sr(3)Ta- Ga(3)Si(2)O(14) (STGS) crystals were grown using a Pt-Rh crucible with a 3-mm-diameter columnar die at the bottom. All grown crystals showed high transparency except for the peripheral area and diameter of approximately 3 mm. The chemical phases at the central parts of the grown crystals were identified as a single phase of langasite-type structure and their lattice parameters were almost the same as those of crystals grown by the Czochralski (Cz) method; however, some impurity phases were observed in the peripheral area. In X-ray rocking curve measurements, the grown crystals indicated equivalent crystallinity to the crystal grown by the Cz method. The piezoelectric constant d(11) of the CNGS crystal was 3.98 pC/N; this value is well correlated with those of previous reports.

  4. Understanding the Cubic Phase Stabilization and Crystallization Kinetics in Mixed Cations and Halides Perovskite Single Crystals.

    Science.gov (United States)

    Xie, Li-Qiang; Chen, Liang; Nan, Zi-Ang; Lin, Hai-Xin; Wang, Tan; Zhan, Dong-Ping; Yan, Jia-Wei; Mao, Bing-Wei; Tian, Zhong-Qun

    2017-03-08

    The spontaneous α-to-δ phase transition of the formamidinium-based (FA) lead halide perovskite hinders its large scale application in solar cells. Though this phase transition can be inhibited by alloying with methylammonium-based (MA) perovskite, the underlying mechanism is largely unexplored. In this Communication, we grow high-quality mixed cations and halides perovskite single crystals (FAPbI3)1-x(MAPbBr3)x to understand the principles for maintaining pure perovskite phase, which is essential to device optimization. We demonstrate that the best composition for a perfect α-phase perovskite without segregation is x = 0.1-0.15, and such a mixed perovskite exhibits carrier lifetime as long as 11.0 μs, which is over 20 times of that of FAPbI3 single crystal. Powder XRD, single crystal XRD and FT-IR results reveal that the incorporation of MA(+) is critical for tuning the effective Goldschmidt tolerance factor toward the ideal value of 1 and lowering the Gibbs free energy via unit cell contraction and cation disorder. Moreover, we find that Br incorporation can effectively control the perovskite crystallization kinetics and reduce defect density to acquire high-quality single crystals with significant inhibition of δ-phase. These findings benefit the understanding of α-phase stabilization behavior, and have led to fabrication of perovskite solar cells with highest efficiency of 19.9% via solvent management.

  5. Mechanism of the emergence of the photo-EMF upon silicon liquid crystal-single crystal contact

    Science.gov (United States)

    Budagov, K. M.; Guseinov, A. G.; Pashaev, B. G.

    2017-03-01

    The effect light has on a silicon liquid crystal-single crystal contact at different temperatures of the surface doping of silicon, and when BaTiO3 nanoparticles are added to the composition of a liquid crystal, is studied. The mechanism of the emergence of the photo-EMF in the liquid crystal-silicon structure is explained.

  6. Low-dissipation cavity optomechanics in single-crystal diamond

    CERN Document Server

    Mitchell, Matthew; Lake, David P; Barclay, Paul E

    2015-01-01

    Single-crystal diamond cavity optomechanical devices are a promising example of a hybrid quantum system: by coupling mechanical resonances to both light and electron spins, they can enable new ways for photons to control solid state qubits. However, creating devices from high quality bulk diamond chips is challenging. Here we demonstrate single-crystal diamond cavity optomechanical devices that can enable photon-phonon-spin coupling. Cavity optomechanical coupling to $2\\,\\text{GHz}$ frequency ($f_\\text{m}$) mechanical resonances is observed. In room temperature ambient conditions, the resonances have a record combination of low dissipation ($Q_\\text{m} > 9000$) and high frequency, with $Q_\\text{m}\\cdot f_\\text{m} \\sim 1.9\\times10^{13}$ sufficient for room temperature single phonon coherence. The system is nearly sideband resolved, and radiation pressure is used to excite $\\sim 31\\,\\text{pm}$ amplitude mechanical self-oscillations that can drive diamond color centre electron spin transitions.

  7. Spatially resolved micro-photoluminescence imaging of porphyrin single crystals

    Science.gov (United States)

    Marin, Dawn M.; Castaneda, Jose; Kaushal, Meesha; Kaouk, Ghallia; Jones, Daniel S.; Walter, Michael G.

    2016-08-01

    We describe the collection of both time-resolved and steady-state micro-photoluminescence data from solution-grown single crystals of 5,15-bis(4-carbomethoxyphenyl)porphyrin (BCM2PP). Linking molecular orientation and structure with excited-state dynamics is crucial for engineering efficient organic solar cells, light-emitting diodes, and related molecular electronics. Photoluminescence features of single porphyrin crystals were imaged using a laser scanning confocal microscope equipped with time-correlated single photon counting (TCSPC). We show enhanced exciton lifetimes (τs1 = 2.6 ns) and stronger steady-state emission in crystalline BCM2PP samples relative to semicrystalline thin films (τs1 = 1.8 ns).

  8. Role of crystal orientation on chemical mechanical polishing of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang

    2016-11-15

    Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.

  9. Synthesis and Crystal Structure of an Organic-inorganic Complex [Hg(DMSO)2(H2O)]2 [GeW12O40]·DMSO·H2O

    Institute of Scientific and Technical Information of China (English)

    Jing Ping WANG; Xiao Di DU; Xian Ying DUAN; Jing Yang NIU

    2006-01-01

    An organic-inorganic mercury coordination compound [Hg(DMSO)2(H2O)]2 [GeW12O40]·DMSO·H2O(DMSO =dimethyl sulfoxide) has been synthesized and characterized by IR, UV spectra, elemental analysis, TG-DTA and X-ray single-crystal diffraction. Structural analysis revealed that in the title compound, the mercury is three-coordinated to show the distorted trigonal cone geometry, and depending on the electrostatic interaction to connect the polyanion [α-GeW12O40]4-. TG-DTA study manifests the decomposition temperature of the polyanion framework in the title compound is 513.5℃, which is much higher than that of the anion framework. It means that the formation of the organic-inorganic mercury coordination compound made the polyanion [α-GeW12O40]4- to be more stable.

  10. Transport Properties of Bi2S3 Single Crystals

    Institute of Scientific and Technical Information of China (English)

    H.T.Shaban; M.M.Nassary; M.S.El-Sadek

    2008-01-01

    Bi2S3 single crystals were grown by using a modification of Bridgman method. Measurements of the electrical conductivity, Hall effect and thermoelectric power (TEP) were preformed in two crystallographic directions(parallel and perpendicular to the c-axis). The measurements showed that the electrical conductivity, Hall mobility, and Seebeck coefficient have anisotropic nature. From these measurements some physical parameters were estimated and the crystals showed n-type of conduction mechanism. Also, values of the energy gap were found to be different in the two directions.

  11. Impurity centers in LiF:Cu{sup +} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Nepomnyashchikh, A I; Shalaev, A A; Subanakov, A K; Paklin, A S; Bobina, N S; Myasnikova, A S; Shendrik, R, E-mail: alshal@igc.irk.ru

    2010-11-15

    The single crystals LiF with copper impurity were grown by Czochralski method. The concentrations of Cu in the crystals were 0,0004-0,002%. In order to determine a copper valence impurity, measurements of the ESR, emission, excitation and absorption spectra were performed. We found emission peak at 410 nm and excitation peak at 250 nm. In agreement with reference, these peaks point to presence of Cu{sup +} in our samples. The mechanisms of capture and recombination providing process of thermoluminescence were recognized.

  12. Organic single-crystal field-effect transistors

    Directory of Open Access Journals (Sweden)

    Colin Reese

    2007-03-01

    Full Text Available Organic molecular crystals hold great promise for the rational development of organic semiconductor materials. Their long-range order not only reveals the performance limits of organic materials, but also provides unique insight into their intrinsic transport properties. The field-effect transistor (FET has served as a versatile tool for electrical characterization of many facets of their performance. In the last few years, breakthroughs in single-crystal FET fabrication techniques have enabled the realization of field-effect mobilities far surpassing amorphous Si, observation of the Hall effect in an organic material, and the study of transport as an explicit function of molecular packing and chemical structure.

  13. Influence of peripheral vibrations and traveling magnetic fields on VGF growth of Sb-doped Ge crystals

    Science.gov (United States)

    Dropka, Natasha; Frank-Rotsch, Christiane; Rudolph, Peter

    2016-11-01

    We performed 3D numerical and experimental studies to assess the potential of peripheral low frequency mechanical vibrations for improving the homogeneity of Sb-doped 4″ Ge crystals grown by vertical gradient freeze (VGF). For this study, a novel bell-shaped graphite vibrator was developed for the generation of the axial vibrations in the direction of three-phase junction. Melt stirring by downward traveling magnetic field (TMF) was used as a benchmark. The results showed superiority of peripheral vibrations to TMF stirring concerning radial and longitudinal doping distribution and initial stirring rate. Experimentally observed standing free surface waves in Ge were caused by shielding effect of the vibrator on TMF.

  14. Evaluation of undoped ZnS single crystal materials for x-ray imaging applications

    Science.gov (United States)

    Saleh, Muad; Lynn, Kelvin G.; McCloy, John S.

    2017-05-01

    ZnS-based materials have a long history of use as x-ray luminescent materials. ZnS was one of the first discovered scintillators and is reported to have one of the highest scintillator efficiencies. The use of ZnS for high energy luminescence has been thus far limited to thin powder screens, such as ZnS:Ag which is used for detecting alpha radiation, due to opacity to its scintillation light, primarily due to scattering. ZnS in bulk form (chemical vapor deposited, powder processed, and single crystal) has high transmission and low scattering compared to powder screens. In this paper, the performance of single crystalline ZnS is evaluated for low energy x-ray (decay time, and low levels of afterglow. We present a trade study which compares the calculated scintillation gain and absolute efficiency for low energy x-rays (<10 keV) comparing thin (<100 μm) ZnS to CsI:Tl, Bi4Ge3O12 (BGO), and Y3Al5O12:Ce (YAG:Ce). The study also gives insight into the spatial resolution of these scintillators. Further, photoluminescence (PL) and PL excitation (PLE) of several undoped ZnS single crystals is compared to their Radioluminescence (RL) spectra. It was found that the ZnS emission wavelength varies on the excitation source energy.

  15. Controlled crystallization of β-In2S3 in 65GeS2ṡ25In2S3ṡ10CsCl chalcohalide glass

    Science.gov (United States)

    Li, Zhuobin; Lin, Changgui; Nie, Qiuhua; Dai, Shixun

    2013-09-01

    65GeS2ṡ25In2S3ṡ10CsCl chalcohalide glass-ceramics containing β-In2S3 crystallites in the glassy matrix were prepared by traditional melt-quenching and subsequent heat-treatment at a fairly low temperature ( T g +10 ∘C) for different durations. The transmission spectra show that the cut-off edge of short wavelength is red-shifted with the prolongation of annealing time, but remains an excellent transmittance in the mid-IR region. Meanwhile, its crystallization behavior was investigated systematically. The results show that the precipitation of β-In2S3 crystal phase is responsible for the first crystallization peak, and the second crystal phase is GeS2, which precipitated in the interior after a heat treatment at a high temperature ( T g +70 ∘C). Furthermore, the crystallization mechanism was investigated using the non-isothermal method. The crystallization rate constant K value of 6.08×10-4 s-1 at 346 ∘C for the β-In2S3 phase is about three times larger than that of the GeS2 phase, indicating a much easier crystallization mechanism of β-In2S3 phase. Therefore, it is easy to control the precipitation of sole β-In2S3 crystallite, and to avoid interference of the second crystal phase GeS2.

  16. Crystal growth, electrical and photophysical properties of Tl2S layered single crystals

    Indian Academy of Sciences (India)

    A M Badr; H A Elshaikh; I M Ashraf

    2009-05-01

    The Tl2S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that ⊥ = 8.82 × 10−5 Sm-1 when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that ∥ = 4.73 × 10−5 Sm-1 when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (⊥/∥) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl2S single crystals is a monomolecular process.

  17. The crystallization and optical properties of LiNbO3 single crystals

    Directory of Open Access Journals (Sweden)

    SLOBODANKA NIKOLIC

    2000-06-01

    Full Text Available LiNbO3 single crystals were grown by the Czochralski technique in an air atmosphere. The critical crystal diameter Dc = 1.5 cm and the critical rate of rotation wc = 35 rpm were calculated from the dynamic of fluids equations for buoyancy-driven and forced convections under which the shape of the melt/crystal interface changed. The domain inversion was carried out at 1473 K using a 10 min 3.75 V/cm electric field. The obtained crystals were cut, polished and etched to determine the presence of dislocations and single domain structures. The lattice parameters a = 0.51494 nm, c = 1.38620 nm and V = 0.3186 nm3 were determined by X-ray powder diffraction. The optical properties were studied by infrared spectroscopy in the wave number range 20 - 5000 cm-1. With decreasing temperature, an atypical behaviour of the phonon modes, due to the ferroelectric properties of LiNbO3 single crystal, could be seen. The optical constants were calculated by Kramers-Kronig analysis and the value of the critical temperature was estimated. The obtained results are discussed and compared with published data.

  18. Strain gradient crystal plasticity analysis of a single crystal containing a cylindrical void

    DEFF Research Database (Denmark)

    Borg, Ulrik; Kysar, J.W.

    2007-01-01

    The effects of void size and hardening in a hexagonal close-packed single crystal containing a cylindrical void loaded by a far-field equibiaxial tensile stress under plane strain conditions are studied. The crystal has three in-plane slip systems oriented at the angle 60 degrees with respect...... to one another. Finite element simulations are performed using a strain gradient crystal plasticity formulation with an intrinsic length scale parameter in a non-local strain gradient constitutive framework. For a vanishing length scale parameter the non-local formulation reduces to a local crystal...... to three times higher for smaller void sizes than for larger void sizes in the non-local material....

  19. Crystallization of inorganic nonlinear optical zinc di-magnesium chloro sulphate (ZDMCS) single crystal

    Science.gov (United States)

    Arivuselvi, R.; Ruban Kumar, A.

    2017-02-01

    The growth of inorganic zinc di-magnesium chloro sulphate (ZDMCS) nonlinear optical material from low temperature evaporation technique at ambient temperature has been reported. The dimension of harvested crystal is 28×10×2 mm3 and is possess rectangular shape morphology. The single crystal X-ray diffraction studies confirmed that the grown crystal belongs to the system of trigonal. The S-Cl stretching vibrations and Mg2+ ions present in the sample were observed by FTIR spectrometer. The cut-off wavelength of the grown crystal is about 203 nm is found by UV-visible absorption spectrum. The nonlinear optical efficiency was determined by powder Kurtz Perry technique. EDAX spectrum confirms the presence of elements within the material. Dielectric nature of the sample was analyzed for the frequency range 50 Hz to 5 MHz at different temperatures. The mechanical behaviour of the title compound was investigated using Vicker's microhardness tester.

  20. Semiconducting polymer single crystals and devices (Conference Presentation)

    Science.gov (United States)

    Dong, Huanli

    2016-11-01

    Highly ordered organic semiconductors in solid state with optimal molecular packing are critical to their electrical performance. Single crystals with long-range molecular orders and nearly perfect molecular packing are the best candidates, which already have been verified to exhibit the highest performance whether based on inorganic or small organic materials. However, in comparison, preparing high quality polymer crystals remains a big challenge in polymer science because of the easy entanglements of the long and flexible polymer chains during self-assembly process, which also significantly limits the development of their crystalline polymeric electronic devices. Here we have carried out systematical investigations to prepare high quality semiconducting polymers and high performance semiconducting polymer crystal optoelectronic devices have been successfully fabricated. The semiconducting polymeric devices demonstrate significantly enhanced charge carreir transport compared to their thin films, and the highest carreir mobiltiy could be approcahing 30 cm2 V-1s-1, one of the highest mobiltiy values for polymer semiconductors.

  1. Neutron transmission and reflection at a copper single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Maayouf, R.M.A.; Abdel-Kawy, A.; Fayek, M.; Habib, N. (Atomic Energy Establishment, Cairo (Egypt). Reactor and Neutron Physics Dept.); Wahba, M. (Ain Shams Univ., Cairo (Egypt). Dept. of Engineering Physics and Mathematics)

    1991-06-01

    Neutron transmission and reflection at a copper single crystal cut along the (111) plane were studied with the fixed-scattering-angle spectrometer installed at the ET-RR-1 reactor. The transmission was measured for neutron wavelengths between 0.15 and 0.46 nm and various orientations of the (111) plane with respect to the incident beam. When used as a neutron band pass filter, the crystal is optimally oriented when the neutron beam is incident parallel to the (111) direction. The reflectivity was measured for the (111) plane at 45deg with respect to the incident beam. The results were found to be in reasonable agreement with a value predicted for the reflected intensity at an imperfect crystal with finite absorption. (orig.).

  2. Resonant magnetic properties of gadolinium-gallium garnet single crystals

    Science.gov (United States)

    Bedyukh, A. R.; Danilov, V. V.; Nechiporuk, A. Yu.; Romanyuk, V. F.

    1999-03-01

    The results of experimental investigations of resonant magnetic properties of gadolinium-gallium garnet (GGG) single crystals at temperatures 4.2-300 K in the frequency range 1.6-9.3 GHz are considered. It is found that magnetic losses in GGG are determined by the initial splitting of energy levels for gadolinium ions in the garnet crystal lattice and by the dipole broadening. The width and shape of the electron paramagnetic resonance (EPR) line in the GGG crystal, whose asymmetry is manifested most strongly at low frequencies, can be explained by the influence of these factors. Magnetic losses in GGG increase with frequency and upon cooling. It is found that the EPR linewidth increases considerably with decreasing temperature due to the presence of rapidly relaxing impurities.

  3. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  4. Electron paramagnetic resonance and electron-nuclear double resonance study of the neutral copper acceptor in ZnGeP sub 2 crystals

    CERN Document Server

    Stevens, K T; Setzler, S D; Schünemann, P G; Pollak, T M

    2003-01-01

    Electron paramagnetic resonance (EPR) and electron-nuclear double resonance have been used to characterize the neutral copper acceptor in ZnGeP sub 2 crystals. The copper substitutes for zinc and behaves as a conventional acceptor (i.e. the 3d electrons do not play a dominant role). Because of a high degree of compensation from native donors, the copper acceptors in our samples were initially in the nonparamagnetic singly ionized state (Cu sub Z sub n sup -). The paramagnetic neutral state (Cu sub Z sub n sup 0) was observed when the crystals were exposed to 632.8 nm or 1064 nm laser light while being held at a temperature below 50 K. The g matrix of the neutral copper acceptor is axial g sub p sub a sub r = 2.049 and g sub p sub e sub r sub p = 2.030), with the unique principal direction parallel to the tetragonal c axis of the crystal. The hyperfine and nuclear quadrupole matrices also exhibit c-axis symmetry (A sub p sub a sub r = 87.6 MHz, A sub p sub e sub r sub p = 34.8 MHz and P = 0.87 MHz for sup 6 su...

  5. Size effects in single crystal thin films : nonlocal crystal plasticity simulations

    NARCIS (Netherlands)

    Yefimov, S; van der Giessen, E

    2005-01-01

    Stress relaxation in single crystalline thin films on substrates subjected to thermal loading is studied using a recently proposed nonlocal continuum crystal plasticity theory. The theory is founded on a statistical-mechanics description of the collective behaviour of dislocations in multiple slip,

  6. A new material for single crystal modulators: BBO

    Science.gov (United States)

    Bammer, F.; Schumi, T.; Petkovsek, R.

    2011-06-01

    Single crystal photo-elastic modulators (SCPEM) are based on a single piezo-electric crystal which is electrically excited on a resonance frequency such that the resulting resonant oscillation causes a modulated artificial birefringence due to the photo-elastic effect. Polarized light experience in such a crystal a strong modulation of polarization, which, in connection with a polarizer, can be used for Q-switching of lasers with pulse repetition frequencies in the range of 100- 1000 kHz. A particularly advantageous configuration is possible with crystals from the symmetry class 3m. Besides LiTaO3 and LiNbO3, both already well explored as SCPEM-materials, we introduce now BBO, which offers a very low absorption in the near infrared region and is therefore particularly suited for Q-switching of solid state lasers. We demonstrate first results of such a BBO-modulator with the dimensions 8.6 x 4.05 x 4.5mm in x-, y-, z- direction, which offers a useful resonance and polarization modulation at 131.9 kHz. Since the piezo-electric effect is small, the voltage amplitude for achieving Q-switching for an Nd:YAG-laser is expected to be in the range of 100V. Nevertheless it is a simple and robust device to achieve Q-switching with a high fixed repetition rate for high power solid state lasers.

  7. Converting ceria polyhedral nanoparticles into single-crystal nanospheres.

    Science.gov (United States)

    Feng, Xiangdong; Sayle, Dean C; Wang, Zhong Lin; Paras, M Sharon; Santora, Brian; Sutorik, Anthony C; Sayle, Thi X T; Yang, Yi; Ding, Yong; Wang, Xudong; Her, Yie-Shein

    2006-06-09

    Ceria nanoparticles are one of the key abrasive materials for chemical-mechanical planarization of advanced integrated circuits. However, ceria nanoparticles synthesized by existing techniques are irregularly faceted, and they scratch the silicon wafers and increase defect concentrations. We developed an approach for large-scale synthesis of single-crystal ceria nanospheres that can reduce the polishing defects by 80% and increase the silica removal rate by 50%, facilitating precise and reliable mass-manufacturing of chips for nanoelectronics. We doped the ceria system with titanium, using flame temperatures that facilitate crystallization of the ceria yet retain the titania in a molten state. In conjunction with molecular dynamics simulation, we show that under these conditions, the inner ceria core evolves in a single-crystal spherical shape without faceting, because throughout the crystallization it is completely encapsulated by a molten 1- to 2-nanometer shell of titania that, in liquid state, minimizes the surface energy. The principle demonstrated here could be applied to other oxide systems.

  8. Frictional properties of single crystals HMX, RDX and PETN explosives.

    Science.gov (United States)

    Wu, Y Q; Huang, F L

    2010-11-15

    The frictional properties of single crystals of cyclotetramethylene tetranitramine (HMX), cyclotrimethylene trinitramine (RDX) and pentaerythritol tetranitrate (PETN) secondary explosives are examined using a sensitive friction machine. The explosive crystals used for the measurements are at least 3.5 mm wide. The friction coefficients between crystals of the same explosive (i.e., HMX on HMX, etc.), crystals of different explosives (i.e., HMX on RDX, etc.), and each explosive and a well-polished gauge steel surface are determined. The frictional surfaces are also studied under an environmental scanning electron microscope (ESEM) to analyze surface microstructural changes under increasing loading forces. The friction coefficients vary considerably with increasing normal loading forces and are particularly sensitive to slider shapes, crystal roughness and the mechanical properties of both the slider and the sample. With increasing loading forces, most friction experiments show surface damage, consisting of grooves, debris, and nano-particles, on both the slider and sample. In some cases, a strong evidence of a localized molten state is found in the central region of the friction track. Possible mechanisms that affect the friction coefficient are discussed based on microscopic observations. Copyright © 2010 Elsevier B.V. All rights reserved.

  9. Dispersion of optical activity of magnesium sulfite hexahydrate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dimov, T; Bunzarov, Zh; Iliev, I; Petkova, P; Tzoukrovski, Y, E-mail: dimov@shu-bg.ne

    2010-11-01

    The magnesium sulfite hexahydrate (MgSO{sub 3}.6H{sub 2}O) crystals are unique because they are the only representative (with sodium periodate) of the crystallographic class C{sub 3} (without a center of symmetry). The crystal symmetry suggests presence of nonlinearity, piezo- and pyro-electric properties and gyrotropy as well. Single crystals of MgSO{sub 3}.6H{sub 2}O (pure and doped with Ni, Co and Zn) for the time being are grown only by the original method developed in the Laboratory for Crystal growth at the Faculty of Physics in Sofia University. The first results of optical activity of pure MgSO{sub 3}.6H{sub 2}O and Zn doped MgSO{sub 3}.6H{sub 2}O crystals are described and analyzed in a wide spectral range. The optical activity manifests itself in the direction (0001) as a rotation of the polarization plane.

  10. EM study of latent track morphology in TiO2 single crystals

    Science.gov (United States)

    O'Connell, J. H.; Skuratov, V. A.; Akilbekov, A.; Zhumazhanova, A.; Janse van Vuuren, A.

    2016-07-01

    A TEM investigation was conducted into the morphology of 167 MeV Xe (2 × 1010 cm-2 to 1014 cm-2) and 1 GeV Bi ion (2 × 1010 cm-2) induced latent tracks in single crystal TiO2 (rutile). At fluences up to 1011 cm-2 latent tracks are visible as discontinuous lines of strained crystal along the ion trajectory. From the implanted surface down to about 60-70 nm below the surface the tracks appear as continuous conical structures with a base of diameter 5-6 nm (Xe) and 8-9 nm (Bi) in contact with the surface with a mushroom shaped hillock extending outward from the surface. At fluences between 6 × 1012 cm-2 and 1013 cm-2 the crystal is amorphized but rod-like crystalline regions remain which are oriented along the ion trajectories. Amorphization extends from the surface down to 8.3 μm below suggesting an upper limit for the threshold electronic stopping power for amorphization of 7.3 keV nm-1. At 1014 cm-2 Xe the entire 8.3 μm subsurface region is rendered amorphous although some evidence of short range ordering remains.

  11. EM study of latent track morphology in TiO{sub 2} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    O’Connell, J.H., E-mail: joconnell@nmmu.ac.za [CHRTEM, NMMU, University Way, Summerstrand, Port Elizabeth (South Africa); Skuratov, V.A. [FLNR, JINR, Joliot-Curie 6, 141980 Dubna (Russian Federation); Akilbekov, A.; Zhumazhanova, A. [L.N. Gumilyov Eurasian National University, Astana (Kazakhstan); Janse van Vuuren, A. [CHRTEM, NMMU, University Way, Summerstrand, Port Elizabeth (South Africa)

    2016-07-15

    A TEM investigation was conducted into the morphology of 167 MeV Xe (2 × 10{sup 10} cm{sup −2} to 10{sup 14} cm{sup −2}) and 1 GeV Bi ion (2 × 10{sup 10} cm{sup −2}) induced latent tracks in single crystal TiO{sub 2} (rutile). At fluences up to 10{sup 11} cm{sup −2} latent tracks are visible as discontinuous lines of strained crystal along the ion trajectory. From the implanted surface down to about 60–70 nm below the surface the tracks appear as continuous conical structures with a base of diameter 5–6 nm (Xe) and 8–9 nm (Bi) in contact with the surface with a mushroom shaped hillock extending outward from the surface. At fluences between 6 × 10{sup 12} cm{sup −2} and 10{sup 13} cm{sup −2} the crystal is amorphized but rod-like crystalline regions remain which are oriented along the ion trajectories. Amorphization extends from the surface down to 8.3 μm below suggesting an upper limit for the threshold electronic stopping power for amorphization of 7.3 keV nm{sup −1}. At 10{sup 14} cm{sup −2} Xe the entire 8.3 μm subsurface region is rendered amorphous although some evidence of short range ordering remains.

  12. Nanofluidics of Single-crystal Diamond Nanomechanical Resonators

    CERN Document Server

    Kara, V; Atikian, H; Yakhot, V; Loncar, M; Ekinci, K L

    2015-01-01

    Single-crystal diamond nanomechanical resonators are being developed for countless applications. A number of these applications require that the resonator be operated in a fluid, i.e., a gas or a liquid. Here, we investigate the fluid dynamics of single-crystal diamond nanomechanical resonators in the form of nanocantilevers. First, we measure the pressure-dependent dissipation of diamond nanocantilevers with different linear dimensions and frequencies in three gases, He, N$_2$, and Ar. We observe that a subtle interplay between the length scale and the frequency governs the scaling of the fluidic dissipation. Second, we obtain a comparison of the surface accommodation of different gases on the diamond surface by analyzing the dissipation in the molecular flow regime. Finally, we measure the thermal fluctuations of the nanocantilevers in water, and compare the observed dissipation and frequency shifts with theoretical predictions. These findings set the stage for developing diamond nanomechanical resonators o...

  13. Oriented hydroxyapatite single crystals produced by the electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Santos, E.A. dos, E-mail: euler@ufs.br [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Moldovan, M.S. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Jacomine, L. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); Mateescu, M. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Werckmann, J. [IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Anselme, K. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Mille, P.; Pelletier, H. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France)

    2010-05-25

    We propose here the use of cathodic electrodeposition as tool to fabricate implant coatings consisting in nano/micro single crystals of hydroxyapatite (HA), preferentially orientated along the c-axis. Coating characterization is the base of this work, where we discuss the mechanisms related to the deposition of oriented hydroxyapatite thin films. It is shown that when deposited on titanium alloys, the HA coating is constituted by two distinct regions with different morphologies: at a distance of few microns from the substrate, large HA single crystals are oriented along the c-axis and appear to grow up from a base material, consisting in an amorphous HA. This organized system has a great importance for cell investigation once the variables involved in the cell/surface interaction are reduced. The use of such systems could give a new insight on the effect of particular HA orientation on the osteoblast cells.

  14. Frequency dispersion of flexoelectricity in PMN-PT single crystal

    Directory of Open Access Journals (Sweden)

    Longlong Shu

    2017-01-01

    Full Text Available The mechanism of the recent discovered enhanced flexoelectricity in perovskites has brought about numerous controversies which still remain unclear. In this paper, we employed relaxor 0.68Pb(Mg2/3Nb1/3O3 -0.32PbTiO3 (PMN-PT single crystals for study. The observed flexoelectric coefficient in PMN-PT single crystal reaches up to 100 μC/m, and in a relative low frequency range, exhibits an abnormal frequency dispersion phenomenon with a positive relationship with frequency. Such frequency dispersion regulation is different from the normal relaxation behavior that usually occur a time delay, and hence proves the flexoelectricity acting more like bulk effect rather than surface effect in this kind of materials.

  15. Growth of EuO single crystals at reduced temperatures

    Science.gov (United States)

    Ramirez, Daniel C.; Besara, Tiglet; Whalen, Jeffrey B.; Siegrist, Theo

    2017-01-01

    Single crystals of (E u1 -xB ax)O have been grown in a molten barium-magnesium metal flux at temperatures up to 1000 °C, producing single crystals of (E u1 -xB ax)O with barium doping levels ranging from x =0.03 to x =0.25 . Magnetic measurements show that the ferromagnetic Curie temperature TC correlates with the Ba doping levels, and a modified Heisenberg model was used to describe the stoichiometry dependence of TC. Extrapolation of the results indicates that a sample with Ba concentration of x =0.72 should have a TC of 0 K, potentially producing a quantum phase transition in this material.

  16. High pressure single crystal and powder XRD study for neighborite

    Science.gov (United States)

    Liu, H.

    2016-12-01

    After Murakami et al. (2004) identified the post-perovskite (ppv) phase transition in MgSiO3 perovskite (pv) at pressures and temperatures consistent with the onset of Earth's D" layer, lots of post-perovskite type phase transitions were founded in other similar systems. These discoveries provided a better understanding of heterogeneous structures and seismic anisotropy observed in the controversial region of the lower mantle. With previous experimental evidence showing the analogue system of neighborite NaMgF3 will transform from pv to ppv at 30 GPa, we performed high quality single crystal XRD experiment, which led to a more precise structure determination. Using helium as pressure medium, one metastable low symmetric phase before the pv-ppv structure transition was discovered, whose total energy was calculated as well. The comparison between single crystal and powder XRD data will be presented, and potential application will be discussed.

  17. Synthesis and characterization of single-crystal strontium hexaboride nanowires.

    Science.gov (United States)

    Jash, Panchatapa; Nicholls, Alan W; Ruoff, Rodney S; Trenary, Michael

    2008-11-01

    Catalyst-assisted growth of single-crystal strontium hexaboride (SrB6) nanowires was achieved by pyrolysis of diborane (B2H6) over SrO powders at 760-800 degrees C and 400 mTorr in a quartz tube furnace. Raman spectra demonstrate that the nanowires are SrB6, and transmission electron microscopy along with selected area diffraction indicate that the nanowires consist of single crystals with a preferred [001] growth direction. Electron energy loss data combined with the TEM images indicate that the nanowires consist of crystalline SrB 6 cores with a thin (1 to 2 nm) amorphous oxide shell. The nanowires have diameters of 10-50 nm and lengths of 1-10 microm.

  18. Annealing Effect on Photovoltages of Quartz Single Crystals

    Institute of Scientific and Technical Information of China (English)

    TIAN Lu; ZHAO Song-Qing; ZHAO Kun

    2010-01-01

    @@ We investigate the photovoltaic effects of quartz single crystals annealed at high temperatures in ambient atmosphere.The open-circuit photovoltages and surface morphologies strongly depend on the heating treatments.When the annealing temperature increases from room temperature to 900℃,the rms roughness of quartz single crystal wafers increases from 0.207 to 1.011 nm.In addition,the photovoltages decrease from 1.994#V at room temperature to 1.551 μ V after treated at 500℃,and then increase up to 9.8μV after annealed at 900℃.The inner mechanism of the present photovoltaic response and surface morphologies is discussed.

  19. Electrical conductivity and dielectric properties of potassium sulfamate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.S.; Iype, L.; Rajesh, R. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam (India); Varughese, G. [Department of Physics, Catholicate College, Pathanamthitta, Kerala (India); Joseph, G. [Department of Physics, Sacred Heart College, Thevera, Cochin, Kerala (India); Louis, G. [Department of Physics, Cochin University of Science and Technology, Cochin (India)

    2011-10-15

    Single crystals of potassium sulfamate are grown by the method of slow evaporation at constant temperature. AC electrical conductivity of potassium sulfamate is measured in the temperature range 300-430 K and in the frequency region between 100 Hz and 3 MHz along the a, b and c-axes. Complex impedance spectroscopy is used to investigate the frequency response of the electrical properties of the potassium sulfamate single crystal. Temperature variation of AC conductivity and dielectric measurements show a slope change around 345 K for both heating and cooling run and this anomaly is attributed as phase transition, which is well supported by the DSC measurements. Value of loss tangent in the temperature region 330-400 K is found to be very low. Activation energies for the conduction process are calculated along the a, b and c-axes. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Search for single top production in e+e- collisions at sqrt(s) up to 209 GeV

    Science.gov (United States)

    ALEPH Collaboration; Heister, A.; Schael, S.; Barate, R.; Brunelière, R.; de Bonis, I.; Decamp, D.; Goy, C.; Jezequel, S.; Lees, J.-P.; Martin, F.; Merle, E.; Minard, M.-N.; Pietrzyk, B.; Trocmé, B.; Boix, G.; Bravo, S.; Casado, M. P.; Chmeissani, M.; Crespo, J. M.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, Ll.; Graugés, E.; Lopez, J.; Martinez, M.; Merino, G.; Pacheco, A.; Paneque, D.; Ruiz, H.; Colaleo, A.; Creanza, D.; de Filippis, N.; de Palma, M.; Iaselli, G.; Maggi, G.; Maggi, M.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Tricomi, A.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Abbaneo, D.; Azzurri, P.; Barklow, T.; Buchmüller, O.; Cattaneo, M.; Cerutti, F.; Clerbaux, B.; Drevermann, H.; Forty, R. W.; Frank, M.; Gianotti, F.; Greening, T. C.; Hansen, J. B.; Harvey, J.; Hutchcroft, D. E.; Janot, P.; Jost, B.; Kado, M.; Mato, P.; Moutoussi, A.; Ranjard, F.; Rolandi, L.; Schlatter, D.; Sguazzoni, G.; Tejessy, W.; Teubert, F.; Valassi, A.; Videau, I.; Ward, J. J.; Badaud, F.; Dessagne, S.; Falvard, A.; Fayolle, D.; Gay, P.; Jousset, J.; Michel, B.; Monteil, S.; Pallin, D.; Pascolo, J. M.; Perret, P.; Hansen, J. D.; Hansen, J. R.; Hansen, P. H.; Nilsson, B. S.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Zachariadou, K.; Blondel, A.; Brient, J.-C.; Machefert, F.; Rougé, A.; Swynghedauw, M.; Tanaka, R.; Videau, H.; Ciulli, V.; Focardi, E.; Parrini, G.; Antonelli, A.; Antonelli, M.; Bencivenni, G.; Bossi, F.; Capon, G.; Chiarella, V.; Laurelli, P.; Mannocchi, G.; Murtas, G. P.; Passalacqua, L.; Kennedy, J.; Lynch, J. G.; Negus, P.; O'Shea, V.; Thompson, A. S.; Wasserbaech, S.; Cavanaugh, R.; Dhamotharan, S.; Geweniger, C.; Hanke, P.; Hepp, V.; Kluge, E. E.; Leibenguth, G.; Putzer, A.; Stenzel, H.; Tittel, K.; Wunsch, M.; Beuselinck, R.; Cameron, W.; Davies, G.; Dornan, P. J.; Girone, M.; Hill, R. D.; Marinelli, N.; Nowell, J.; Rutherford, S. A.; Sedgbeer, J. K.; Thompson, J. C.; White, R.; Ghete, V. M.; Girtler, P.; Kneringer, E.; Kuhn, D.; Rudolph, G.; Bouhova-Thacker, E.; Bowdery, C. K.; Clarke, D. P.; Ellis, G.; Finch, A. J.; Foster, F.; Hughes, G.; Jones, R. W. L.; Pearson, M. R.; Robertson, N. A.; Smizanska, M.; van der Aa, O.; Delaere, C.; Lemaitre, V.; Blumenschein, U.; Hölldorfer, F.; Jakobs, K.; Kayser, F.; Kleinknecht, K.; Müller, A.-S.; Quast, G.; Renk, B.; Sander, H.-G.; Schmeling, S.; Wachsmuth, H.; Zeitnitz, C.; Ziegler, T.; Bonissent, A.; Coyle, P.; Curtil, C.; Ealet, A.; Fouchez, D.; Payre, P.; Tilquin, A.; Ragusa, F.; David, A.; Dietl, H.; Ganis, G.; Hüttmann, K.; Lütjens, G.; Männer, W.; Moser, H.-G.; Settles, R.; Wolf, G.; Boucrot, J.; Callot, O.; Davier, M.; Duflot, L.; Grivaz, J.-F.; Heusse, Ph.; Jacholkowska, A.; Serin, L.; Veillet, J.-J.; de Vivie de Régie, J.-B.; Yuan, C.; Bagliesi, G.; Boccali, T.; Foà, L.; Giammanco, A.; Giassi, A.; Ligabue, F.; Messineo, A.; Palla, F.; Sanguinetti, G.; Sciabà, A.; Tenchini, R.; Venturi, A.; Verdini, P. G.; Awunor, O.; Blair, G. A.; Cowan, G.; Garcia-Bellido, A.; Green, M. G.; Jones, L. T.; Medcalf, T.; Misiejuk, A.; Strong, J. A.; Teixeira-Dias, P.; Clifft, R. W.; Edgecock, T. R.; Norton, P. R.; Tomalin, I. R.; Bloch-Devaux, B.; Boumediene, D.; Colas, P.; Fabbro, B.; Lançon, E.; Lemaire, M.-C.; Locci, E.; Perez, P.; Rander, J.; Tuchming, B.; Vallage, B.; Konstantinidis, N.; Litke, A. M.; Taylor, G.; Booth, C. N.; Cartwright, S.; Combley, F.; Hodgson, P. N.; Lehto, M.; Thompson, L. F.; Böhrer, A.; Brandt, S.; Grupen, C.; Hess, J.; Ngac, A.; Prange, G.; Sieler, U.; Borean, C.; Giannini, G.; He, H.; Putz, J.; Rothberg, J.; Armstrong, S. R.; Berkelman, K.; Cranmer, K.; Ferguson, D. P. S.; Gao, Y.; González, S.; Hayes, O. J.; Hu, H.; Jin, S.; Kile, J.; McNamara, P. A.; Nielsen, J.; Pan, Y. B.; von Wimmersperg-Toeller, J. H.; Wiedenmann, W.; Wu, J.; Wu, Sau Lan; Wu, X.; Zobernig, G.; Dissertori, G.

    2002-09-01

    Single top production via the flavour changing neutral current reactions e+e--->t¯c,t¯u is searched for within the 214 pb-1 of data collected by ALEPH at centre-of-mass energies between 204 and 209 GeV. No deviation from the Standard Model expectation is observed and upper limits on the single top production cross sections are derived. The combination with data collected at lower centre-of-mass energies yields an upper limit on the branching ratio BR(t-->Zc)+BR(t-->Zu)γc)+BR(t-->γu)=0 and mt=174 GeV/c2.

  1. Search for Single Top Production in $e^{+} e^{-}$ Collisions at $\\sqrt{s}$ up to 209 GeV

    CERN Document Server

    Heister, A; Barate, R; Brunelière, R; De Bonis, I; Décamp, D; Goy, C; Jézéquel, S; Lees, J P; Martin, F; Merle, E; Minard, M N; Pietrzyk, B; Trocmé, B; Boix, G; Bravo, S; Casado, M P; Chmeissani, M; Crespo, J M; Fernández, E; Fernández-Bosman, M; Garrido, L; Graugès-Pous, E; López, J; Martínez, M; Merino, G; Pacheco, A; Paneque, D; Ruiz, H; Colaleo, A; Creanza, D; De Filippis, N; De Palma, M; Iaselli, Giuseppe; Maggi, G; Maggi, M; Nuzzo, S; Ranieri, A; Raso, G; Ruggieri, F; Selvaggi, G; Silvestris, L; Tempesta, P; Tricomi, A; Zito, G; Huang, X; Lin, J; Ouyang, Q; Wang, T; Xie, Y; Xu, R; Xue, S; Zhang, J; Zhang, L; Zhao, W; Abbaneo, D; Azzurri, P; Barklow, Timothy L; Buchmüller, O L; Cattaneo, M; Cerutti, F; Clerbaux, B; Drevermann, H; Forty, Roger W; Frank, M; Gianotti, F; Greening, T C; Hansen, J B; Harvey, J; Hutchcroft, D E; Janot, P; Jost, B; Kado, M; Mato, P; Moutoussi, A; Ranjard, F; Rolandi, Luigi; Schlatter, W D; Sguazzoni, G; Tejessy, W; Teubert, F; Valassi, Andrea; Videau, I; Ward, J J; Badaud, F; Dessagne, S; Falvard, A; Fayolle, D; Gay, P; Jousset, J; Michel, B; Monteil, S; Pallin, D; Pascolo, J M; Perret, P; Hansen, J D; Hansen, J R; Hansen, P H; Nilsson, B S; Kyriakis, A; Markou, C; Simopoulou, Errietta; Vayaki, Anna; Zachariadou, K; Blondel, A; Brient, J C; Machefert, F P; Rougé, A; Swynghedauw, M; Tanaka, R; Videau, H L; Ciulli, V; Focardi, E; Parrini, G; Antonelli, A; Antonelli, M; Bencivenni, G; Bossi, F; Capon, G; Chiarella, V; Laurelli, P; Mannocchi, G; Murtas, G P; Passalacqua, L; Kennedy, J; Lynch, J G; Negus, P; O'Shea, V; Thompson, A S; Wasserbaech, S R; Cavanaugh, R J; Dhamotharan, S; Geweniger, C; Hanke, P; Hepp, V; Kluge, E E; Leibenguth, G; Putzer, A; Stenzel, H; Tittel, K; Wunsch, M; Beuselinck, R; Cameron, W; Davies, G; Dornan, Peter J; Girone, M; Hill, R D; Marinelli, N; Nowell, J; Rutherford, S A; Sedgbeer, J K; Thompson, J C; White, R; Ghete, V M; Girtler, P; Kneringer, E; Kuhn, D; Rudolph, G; Bouhova-Thacker, E; Bowdery, C K; Clarke, D P; Ellis, G; Finch, A J; Foster, F; Hughes, G; Jones, R W L; Pearson, M R; Robertson, N A; Smizanska, M; van der Aa, O; Delaere, C; Lemaître, V; Blumenschein, U; Hölldorfer, F; Jakobs, K; Kayser, F J; Kleinknecht, K; Müller, A S; Quast, G; Renk, B; Sander, H G; Schmeling, S; Wachsmuth, H W; Zeitnitz, C; Ziegler, T; Bonissent, A; Coyle, P; Curtil, C; Ealet, A; Fouchez, D; Payre, P; Tilquin, A; Ragusa, F; David, A; Dietl, H; Ganis, G; Hüttmann, K; Lütjens, G; Männer, W; Moser, H G; Settles, Ronald; Wolf, G; Boucrot, J; Callot, O; Davier, M; Duflot, L; Grivaz, J F; Heusse, P; Jacholkowska, A; Serin, L; Veillet, J J; De Vivie de Régie, J B; Yuan, C; Bagliesi, G; Boccali, T; Foà, L; Giammanco, A; Giassi, A; Ligabue, F; Messineo, A; Palla, Fabrizio; Sanguinetti, G; Sciabà, A; Tenchini, Roberto; Venturi, A; Verdini, P G; Awunor, O; Blair, G A; Cowan, G; García-Bellido, A; Green, M G; Jones, L T; Medcalf, T; Misiejuk, A; Strong, J A; Teixeira-Dias, P; Clifft, R W; Edgecock, T R; Norton, P R; Tomalin, I R; Bloch-Devaux, B; Boumediene, D E; Colas, P; Fabbro, B; Lançon, E; Lemaire, M C; Locci, E; Pérez, P; Rander, J; Tuchming, B; Vallage, B; Konstantinidis, N P; Litke, A M; Taylor, G; Booth, C N; Cartwright, S L; Combley, F; Hodgson, P N; Lehto, M H; Thompson, L F; Böhrer, A; Brandt, S; Grupen, Claus; Hess, J; Ngac, A; Prange, G; Sieler, U; Borean, C; Giannini, G; He, H; Pütz, J; Rothberg, J E; Armstrong, S R; Berkelman, K; Cranmer, K; Ferguson, D P S; Gao, Y; González, S; Hayes, O J; Hu, H; Jin, S; Kile, J; McNamara, P A; Nielsen, J; Pan, Y B; Von Wimmersperg-Töller, J H; Wiedenmann, W; Wu, J; Wu Sau Lan; Wu, X; Zobernig, G; Dissertori, G

    2002-01-01

    Single top production via the flavour changing neutral current reactions e+e- -> \\bar{t}c , \\bar{t}u is searched for within the 214~pb-1 of data collected by ALEPH at centre-of-mass energies between 204 and 209~GeV. No deviation from the Standard Model expectation is observed and upper limits on the single top production cross sections are derived. The combination with data collected at lower centre-of-mass energies yields an upper limit on the branching ratio BR(t -> Zc)+BR(t -> Zu) \\gamma c)+BR(t -> \\gamma u)= 0 and mt=174 GeV/c2$.

  2. Single crystal neutron diffraction study of triglycine sulphate revisited

    Indian Academy of Sciences (India)

    Rajul Ranjan Choudhury; R Chitra

    2008-11-01

    In order to get the exact hydrogen-bonding scheme in triglycine sulphate (TGS), which is an important hydrogen bonded ferroelectric, a single crystal neutron diffraction study was undertaken. The structure was refined to an -factor of [2] = 0.034. Earlier neutron structure of TGS was reported with a very limited data set and large standard deviations. The differences between the present and the earlier reported neutron structure of TGS are discussed.

  3. The Herbertsmithite Hamiltonian: {mu}SR measurements on single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ofer, Oren [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, V6T2A3 (Canada); Keren, Amit [Department of Physics, Technion, Haifa 32000 (Israel); Brewer, Jess H [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T1Z1 (Canada); Han, Tianheng H; Lee, Young S, E-mail: oren@triumf.ca [Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2011-04-27

    We present transverse field muon spin rotation/relaxation measurements on single crystals of the spin-1/2 kagome antiferromagnet Herbertsmithite. We find that the spins are more easily polarized when the field is perpendicular to the kagome plane. We demonstrate that the difference in magnetization between the different directions cannot be accounted for by Dzyaloshinskii-Moriya-type interactions alone and that anisotropic axial interaction is present.

  4. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  5. Microstructure evolution of single crystal copper wires in cold drawing

    Institute of Scientific and Technical Information of China (English)

    CHEN; Jian; YAN; Wen; WANG; XueYan; FAN; XinHui

    2007-01-01

    The deformation microstructure evolution of single crystal copper wires produced by OCC method has been studied with the help of TEM, EBSD and OM. The results show that there are a small number of dendrites and twins in the undeformed single crystal copper wires. However, it is difficult to observe these dendrites in deformed single crystal copper wires. The structure evolution of deformed single crystal copper wires during drawing process can be divided into three stages. When the true strain is lower than 0.94, macroscopic subdivision of grains is not evident, and the microscopic evolution of deformed structure is that the cells are formed and elongated in drawn direction. When the true strain is between 0.94 and 1.96, macroscopic subdivision of grains takes place, and the number of microbands located on {111} and cell blocks is much more than that with the true strain lower than 0.94. When the true strain is larger than 1.96, the macroscopic subdivision of grains becomes more evident than that with the true strain between 0.94 and 1.96, and S-bands structure and lamellar boundaries will be formed. From EBSD analysis, it is found that part of texture resulting from solidifying is transformed into and due to shear deformation, but texture component is still kept in majority. When the true strain is 0.94, the misorientation angle of dislocation boundaries resulting from deformation is lower than 14°. However, when the true strain arrives at 1.96, the misorientation angle of some boundaries will be greater than 50°, and the peak of misorientation angle distribution produced by texture evolution is located in the range between 25° and 30°.

  6. Study of diffusion of Ag in Cu single crystals

    CERN Document Server

    Wang, R

    2002-01-01

    4.0 MeV sup 7 Li sup + sup + RBS and AES were used for investigations of thermal diffusion of Ag in Cu single crystals. The annealing of samples was carried out in vacuum in the temperature range from 498 to 613 K. The element depth concentration profiles transformed from RBS spectra indicate that the diffusion of Ag into Cu is a typical volume diffusion. The Arrhenius parameters corresponding to the diffusion were obtained.

  7. Interfacial dislocation motion and interactions in single-crystal superalloys

    Energy Technology Data Exchange (ETDEWEB)

    Liu, B. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Raabe, D. [Max Planck Inst. fur Eisenforshung. Dusseldorf (Germany); Roters, F. [Max Planck Inst. fur Eisenforshung. Dusseldorf (Germany); Arsenlis, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-01

    The early stage of high-temperature low-stress creep in single-crystal superalloys is characterized by the rapid development of interfacial dislocation networks. Although interfacial motion and dynamic recovery of these dislocation networks have long been expected to control the subsequent creep behavior, direct observation and hence in-depth understanding of such processes has not been achieved. Incorporating recent developments of discrete dislocation dynamics models, we simulate interfacial dislocation motion in the channel structures of single-crystal superalloys, and investigate how interfacial dislocation motion and dynamic recovery are affected by interfacial dislocation interactions and lattice misfit. Different types of dislocation interactions are considered: self, collinear, coplanar, Lomer junction, glissile junction, and Hirth junction. The simulation results show that strong dynamic recovery occurs due to the short-range reactions of collinear annihilation and Lomer junction formation. The misfit stress is found to induce and accelerate dynamic recovery of interfacial dislocation networks involving self-interaction and Hirth junction formation, but slow down the steady interfacial motion of coplanar and glissile junction forming dislocation networks. The insights gained from these simulations on high-temperature low-stress creep of single-crystal superalloys are also discussed.

  8. Physical properties of CuAlO 2 single crystal

    Science.gov (United States)

    Brahimi, R.; Bellal, B.; Bessekhouad, Y.; Bouguelia, A.; Trari, M.

    2008-09-01

    CuAlO 2 single crystal elaborated by the flux method is a narrow band gap semiconductor crystallizing in the delafossite structure (SG R3¯m). Oxygen insertion in the layered lattice generates p-type conductivity where most holes are trapped in surface-polaron states. The detailed photoelectrochemical characterization and electrochemical impedance spectroscopy (EIS) have been reported for the first time on the single crystal. The study is confined in the basal plan and reversible oxygen insertion is evidenced from the intensity potential characteristics. The oxide is characterized by an excellent chemical stability; the semi-logarithmic plot gave a corrosion potential of-0.82 V SCE and an exchange current density of 0.022 μA cm -2 in KCl (0.5 M) electrolyte. The capacitance measurement ( C-2- V) shows a linear behavior from which a flat band potential of +0.42 V SCE and a doping density NA of 10 16 cm -3 have been determined. The valence band, located at 5.24 eV (0.51 V SCE) below vacuum, is made up of Cu-3d orbital. The Nyquist plot exhibits a pseudo-semicircle whose center is localized below the real axis with an angle of 20°. This can be attributed to a single relaxation time of the electrical equivalent circuit and a constant phase element (CPE). The absence of straight line indicates that the process is under kinetic control.

  9. Constitutive Model for an FCC Single-Crystal Material

    Institute of Scientific and Technical Information of China (English)

    DING Zhi-ping; LIU Yi-lun; YIN Ze-yong; YANG Zhi-guo; CHENG Xiao-ming

    2006-01-01

    Talking into account the effects that the components of tension stresses couple with components of torsion stresses when off-axis loads are applied to orthotropic materials.Hill's yield criterion for plastically orthotropic solids is modified by adding an invariant that is composed of the product item of quadratic components of the deviatoric siress tensor,and a new yield criteflon is put forward in terms of the characteristics of the face-centered cubic(FCC) single-crystal material.The correlation of prediction and experiments is very good.and the new criterion is used to predict the yield stresses of an intemal single-crystal,Nickel-based superalloy,DD3,which is more accurate than that Of Hill's at 760°C.Equivalent stress and strain that adapt to the new criterion are defined.Thinking of the yield function as a plastic potential function from the associated flow rule.the elastic-plastic constitutive model for the FCC single-crystal material is constructed,and the corresponding elastic-plastic matrix iseduced.The new yield criterion and its equivalent stress and strain will be reduced to Von Mises' yield criterion and corresponding equivalent stress and strain for isotropic materials.

  10. Chiral multichromic single crystals for optical devices (LDRD 99406).

    Energy Technology Data Exchange (ETDEWEB)

    Kemp, Richard Alan; Felix, Ana M. (University of New Mexico, Albuquerque, NM)

    2006-12-01

    This report summarizes our findings during the study of a novel system that yields multi-colored materials as products. This system is quite unusual as it leads to multi-chromic behavior in single crystals, where one would expect that only a single color would exist. We have speculated that these novel solids might play a role in materials applications such as non-linear optics, liquid crystal displays, piezoelectric devices, and other similar applications. The system examined consisted of a main-group alkyl compound (a p block element such as gallium or aluminum) complexed with various organic di-imines. The di-imines had substituents of two types--either alkyl or aromatic groups attached to the nitrogen atoms. We observed that single crystals, characterized by X-ray crystallography, were obtained in most cases. Our research during January-July, 2006, was geared towards understanding the factors leading to the multi-chromic nature of the complexes. The main possibilities put forth initially considered (a) the chiral nature of the main group metal, (b) possible reduction of the metal to a lower-valent, radical state, (c) the nature of the ligand(s) attached to the main group metal, and (d) possible degradation products of the ligand leading to highly-colored products. The work carried out indicates that the most likely explanation considered involves degradation of the aromatic ligands (a combination of (c) and (d)), as the experiments performed can clearly rule out (a) and (b).

  11. Single crystal plasticity by modeling dislocation density rate behavior

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, Benjamin L [Los Alamos National Laboratory; Bronkhorst, Curt [Los Alamos National Laboratory; Beyerlein, Irene [Los Alamos National Laboratory; Cerreta, E. K. [Los Alamos National Laboratory; Dennis-Koller, Darcie [Los Alamos National Laboratory

    2010-12-23

    The goal of this work is to formulate a constitutive model for the deformation of metals over a wide range of strain rates. Damage and failure of materials frequently occurs at a variety of deformation rates within the same sample. The present state of the art in single crystal constitutive models relies on thermally-activated models which are believed to become less reliable for problems exceeding strain rates of 10{sup 4} s{sup -1}. This talk presents work in which we extend the applicability of the single crystal model to the strain rate region where dislocation drag is believed to dominate. The elastic model includes effects from volumetric change and pressure sensitive moduli. The plastic model transitions from the low-rate thermally-activated regime to the high-rate drag dominated regime. The direct use of dislocation density as a state parameter gives a measurable physical mechanism to strain hardening. Dislocation densities are separated according to type and given a systematic set of interactions rates adaptable by type. The form of the constitutive model is motivated by previously published dislocation dynamics work which articulated important behaviors unique to high-rate response in fcc systems. The proposed material model incorporates thermal coupling. The hardening model tracks the varying dislocation population with respect to each slip plane and computes the slip resistance based on those values. Comparisons can be made between the responses of single crystals and polycrystals at a variety of strain rates. The material model is fit to copper.

  12. Large-lattice-parameter perovskite single-crystal substrates

    Science.gov (United States)

    Uecker, Reinhard; Bertram, Rainer; Brützam, Mario; Galazka, Zbigniew; Gesing, Thorsten M.; Guguschev, Christo; Klimm, Detlef; Klupsch, Michael; Kwasniewski, Albert; Schlom, Darrell G.

    2017-01-01

    The pseudobinary system LaLuO3-LaScO3 was explored in hopes of discovering new perovskite-type substrates with pseudocubic lattice parameters above 4 Å. A complete solid solution of the type (LaLuO3)1-x(LaScO3)x forms between the end members LaLuO3 and LaScO3, enabling large single crystals of (LaLuO3)1-x(LaScO3)x to be grown from the melt. A single crystal with x≈0.34 was demonstrated. Considering the maximum thermal load of the iridium crucibles appropriate for Czochralski growth of this solid solution, the theoretically maximum achievable x-value is 0.67. Based on the phase diagram determined, it is anticipated that single crystals with pseudocubic lattice constants between 4.09 and 4.18 Å can be grown in this system by the Czochralski method.

  13. Single mode dye-doped polymer photonic crystal lasers

    DEFF Research Database (Denmark)

    Christiansen, Mads Brøkner; Buss, Thomas; Smith, Cameron

    2010-01-01

    Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode...... emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e. g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be -0.045 or -0...

  14. Influence of solvents on the habit modification of alpha lactose monohydrate single crystals

    Science.gov (United States)

    Parimaladevi, P.; Srinivasan, K.

    2013-02-01

    Restricted evaporation of solvent method was adopted for the growth of alpha lactose monohydrate single crystals from different solvents. The crystal habits of grown crystals were analysed. The form of crystallization was confirmed by powder x-ray diffraction analysis. Thermal behaviour of the grown crystals was studied by using differential scanning calorimetry.

  15. Relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal

    CERN Document Server

    Bandiera, L; Bagli, E; Germogli, G; Guidi, V; Sytov, A; Kirillin, I V; Shul'ga, N F; Berra, A; Lietti, D; Prest, M; De Salvador, D; Vallazza, E

    2016-01-01

    An investigation on the mechanism of relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal was carried out at the extracted line H8 from CERN Super Proton Synchrotron. The experimental results were critically compared to computer simulations, showing a good agreement. We firmly individuated a necessary condition for the exploitation of axial confinement or its relaxation for particle beam manipulation in high-energy accelerators. We demonstrated that with a short bent crystal, aligned with one of its main axis to the beam direction, it is possible to realize either a total beam steerer or a beam splitter with adjustable intensity. In particular, in the latter case, a complete relaxation from axial confinement to planar channeling takes place, resulting in beam splitting into the two strongest skew planar channels.

  16. Relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal

    Energy Technology Data Exchange (ETDEWEB)

    Bandiera, L.; Mazzolari, A.; Bagli, E.; Germogli, G.; Guidi, V. [Universita di Ferrara, Dipartimento di Fisica, Ferrara (Italy); INFN, Ferrara (Italy); Sytov, A. [Universita di Ferrara, Dipartimento di Fisica, Ferrara (Italy); Belarusian State University, Research Institute for Nuclear Problems, Minsk (Belarus); INFN, Ferrara (Italy); Kirillin, I.V. [National Science Center ' ' Kharkov Institute of Physics and Technology' ' , Akhiezer Institute for Theoretical Physics, Kharkov (Ukraine); Shul' ga, N.F. [National Science Center ' ' Kharkov Institute of Physics and Technology' ' , Akhiezer Institute for Theoretical Physics, Kharkov (Ukraine); V.N. Karazin Kharkov National University, Kharkov (Ukraine); Berra, A.; Lietti, D.; Prest, M. [Universita dell' Insubria, Como (Italy); INFN Sezione di Milano Bicocca, Milan (Italy); De Salvador, D. [INFN Laboratori Nazionali di Legnaro, Legnaro (Italy); Universita di Padova, Dipartimento di Fisica, Padua (Italy); Vallazza, E. [INFN Sezione di Trieste, Trieste (Italy)

    2016-02-15

    An investigation on the mechanism of relaxation of axially confined 400 GeV/c protons to planar channeling in a bent crystal was carried out at the extracted line H8 from CERN Super Proton Synchrotron. The experimental results were critically compared to computer simulations, showing a good agreement. We identified a necessary condition for the exploitation of axial confinement or its relaxation for particle beam manipulation in high-energy accelerators. We introduce the idea of using a short bent crystal, aligned with one of its main axis to the beam direction, as a beam steerer or a beam splitter with adjustable intensity in the field of particle accelerators. In particular, in the latter case, a complete relaxation from axial confinement to planar channeling takes place, resulting in beam splitting into the two strongest skew planar channels. (orig.)

  17. Acquisition of Single Crystal Growth and Characterization Equipment

    Energy Technology Data Exchange (ETDEWEB)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and

  18. Synthesis and Structural Characterization of the New Clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    Directory of Open Access Journals (Sweden)

    Marion C. Schäfer

    2016-03-01

    Full Text Available This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7Ge42.23, Rb8Cd3.65(7Ge42.35, and Cs7.80(1Cd3.65(6Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. This and several other details of the crystal chemistry are elaborated.

  19. Tracking performance of a single-crystal and a polycrystalline diamond pixel-detector

    Energy Technology Data Exchange (ETDEWEB)

    Menasce, D.; et al.

    2013-06-01

    We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was about 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke$-$), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.

  20. Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

    KAUST Repository

    Chao, Chunying

    2012-08-15

    Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Effect of Solidification Condition on Microstructure and Mechanical Properties of Single Crystal Superalloy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CMSX-2 single crystals with different primary dendrite arm spacing were obtained on directional solidification apparatus with high temperature gradient (250 K/cm). The microstructure and elevated temperature stress rupture properties of these single crystals were examined and analyzed.

  2. Coherent Bremsstrahlung, Coherent Pair Production, Birefringence and Polarimetry in the 20-170 GeV energy range using aligned crystals

    CERN Document Server

    Apyan, A; Badelek, B; Ballestrero, S; Biino, C; Birol, I; Cenci, P; Connell, S H; Eichblatt, S; Fonseca, T; Freund, A; Gorini, B; Groess, R; Ispirian, K; Ketel, T; Kononets, Y V; López, A; Mangiarotti, A; Sellschop, J P Friedel; Shieh, M; Sona, P; Strakhovenko, V M; Uggerhøj, U; Uggerhøj, Erik; Van Rens, B; Velasco, M; Vilakazi, Z Z; Wessely, O; Ünel, G; Kononets, Yu V

    2008-01-01

    The processes of coherent bremsstrahlung (CB) and coherent pair production (CPP) based on aligned crystal targets have been studied in the energy range 20-170 GeV. The experimental arrangement allowed these phenomena as well as their polarization dependence to be evaluated under conditions where single-photon cross-sections could be measured. This proved very important as the theoretical description of CB and CPP is an area of active theoretical debate and development. The theoretical approach used in this paper predicts both the cross sections and polarization observables very well for the experimental conditions investigated, indicating that the understanding of CB and CPP is reliable up to energies of 170 GeV. A birefringence effect in CPP was studied and it was demonstrated this enabled new technologies for high energy photon beam optics, such as polarimeters (for both linear and circular polarization) and phase plates. We also present new results regarding the features of coherent high energy photon emis...

  3. Advanced piezoelectric single crystal based transducers for naval sonar applications

    Science.gov (United States)

    Snook, Kevin A.; Rehrig, Paul W.; Hackenberger, Wesley S.; Jiang, Xiaoning; Meyer, Richard J., Jr.; Markley, Douglas

    2006-03-01

    Transducers incorporating single crystal piezoelectric Pb(Mg 1/3Nb 2/3) x-1Ti xO 3 (PMN-PT) exhibit significant advantages over ceramic piezoelectrics such as PZT, including both high electromechanical coupling (k 33 > 90%) and piezoelectric coefficients (d 33 > 2000 pC/N). Conventional orientation gives inherently larger bandwidth and output power than PZT ceramics, however, the anisotropy of the crystal also allows for tailoring of the performance by orienting the crystal along different crystallographic axes. This attribute combined with composition refinements can be used to improve thermal or mechanical stability, which is important in high power, high duty cycle sonar applications. By utilizing the "31" resonance mode, the high power performance of PMN-PT can be improved over traditional "33" mode single crystal transducers, due to an improved aspect ratio. Utilizing novel geometries, effective piezoelectric constants of -600 pC/N to -1200 pC/N have been measured. The phase transition point induced by temperature, pre-stress or field is close to that in the "33" mode, and since the prestress is applied perpendicular to the poling direction in "31" mode elements, they exhibit lower loss and can therefore be driven harder. The high power characteristics of tonpilz transducers can also be affected by the composition of the PMN-PT crystal. TRS modified the composition of PMN-PT to improve the thermal stability of the material, while keeping the loss as low as possible. Three dimensional modeling shows that the useable bandwidth of these novel compositions nearly equals that of conventional PMN-PT. A decrease in the source level of up to 6 dB was calculated, which can be compensated for by the higher drive voltages possible.

  4. Mirroring of 400 GeV/c protons by an ultra-thin straight crystal

    CERN Document Server

    Scandale, W; Butcher, M; Cerutti, F; Gilardoni, S; Lechner, A; Losito, R; Masi, A; Metral, E; Mirarchi, D; Montesano, S; Redaelli, S; Smirnov, G; Bagli, E; Bandiera, L; Baricordi, S; Dalpiaz, P; Germogli, G; Guidi, V; Mazzolari, A; Vincenzi, D; Claps, G; Dabagov, S; Hampai, D; Murtas, F; Cavoto, G; Garattini, M; Iacoangeli, F; Ludovici, L; Santacesaria, R; Valente, P; Galluccio, F; Afonin, A G; Chesnokov, Yu A; Chirkov, P N; Maisheev, V A; Sandomirskiy, Yu E; Yazynin, I A; Kovalenko, A D; Taratin, A M; Gavrikov, Yu A; Ivanov, Yu M; Lapina, L P; Ferguson, W; Fulcher, J; Hall, G; Pesaresi, M; Raymond, M

    2014-01-01

    Channeling is the confinement of the trajectory of a charged particle in a crystalline solid. Positively charged particles channeled between crystal planes oscillate with a certain oscillation length, which depends on particle energy. A crystal whose thickness is half the oscillation length for planar channeling may act as a mirror for charged particles. If the incident angle of the particle trajectory with the crystal plane is less than the critical angle for channeling, under-barrier particles undergo half an oscillation and exit the crystal with the reversal of their transverse momentum, i.e., the particles are “mirrored” by the crystal planes. Unlike the traditional scheme relying on millimeter-long curved crystals, particle mirroring enables beam steering in high-energy accelerators via interactions with micrometer-thin straight crystal. The main advantage of mirroring is the interaction with a minimal amount of material along the beam, thereby decreasing unwanted incoherent nuclear interactions. The...

  5. In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Naohiko [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)]. E-mail: e0957@mosk.tytlabs.co.jp; Konomi, Ichiro [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan); Seno, Yoshiki [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan); Motohiro, Tomoyoshi [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2005-05-15

    The crystallization processes of the Ge{sub 2}Sb{sub 2}Te{sub 5} thin film used for PD and DVD-RAM were studied in its realistic optical disk film configurations for the first time by X-ray diffraction using an intense X-ray beam of a synchrotron orbital radiation facility (SPring-8) and in situ quick detection with a Position-Sensitive-Proportional-Counter. The dependence of the amorphous-to-fcc phase-change temperature T{sub 1} on the rate of temperature elevation R{sub et} gave an activation energy E{sub a}: 0.93 eV much less than previously reported 2.2 eV obtained from a model sample 25-45 times thicker than in the real optical disks. The similar measurement on the Ge{sub 4}Sb{sub 1}Te{sub 5} film whose large reflectance change attains the readability by CD-ROM drives gave E{sub a}: 1.13 eV with larger T{sub 1} than Ge{sub 2}Sb{sub 2}Te{sub 5} thin films at any R{sub et} implying a lower sensitivity in erasing as well as a better data stability of the phase-change disk.

  6. Search for Single Top Production in $e^{+}e^{-}$ Collisions at $\\sqrt{s}$ = 189 - 202 GeV

    CERN Document Server

    Barate, R; Ghez, P; Goy, C; Jézéquel, S; Lees, J P; Martin, F; Merle, E; Minard, M N; Pietrzyk, B; Alemany, R; Bravo, S; Casado, M P; Chmeissani, M; Crespo, J M; Fernández, E; Fernández-Bosman, M; Garrido, L; Graugès-Pous, E; Juste, A; Martínez, M; Merino, G; Miquel, R; Mir, L M; Morawitz, P; Pacheco, A; Riu, I; Ruiz, H; Colaleo, A; Creanza, D; De Palma, M; Iaselli, Giuseppe; Maggi, G; Maggi, M; Nuzzo, S; Ranieri, A; Raso, G; Ruggieri, F; Selvaggi, G; Silvestris, L; Tempesta, P; Tricomi, A; Zito, G; Huang, X; Lin, J; Ouyang, Q; Wang, T; Xie, Y; Xu, R; Xue, S; Zhang, J; Zhang, L; Zhao, W; Abbaneo, D; Boix, G; Buchmüller, O L; Cattaneo, M; Cerutti, F; Ciulli, V; Davies, G; Dissertori, G; Drevermann, H; Forty, Roger W; Frank, M; Gianotti, F; Greening, T C; Halley, A W; Hansen, J B; Harvey, J; Janot, P; Jost, B; Kado, M; Leroy, O; Maley, P; Mato, P; Minten, Adolf G; Moutoussi, A; Ranjard, F; Rolandi, Luigi; Schlatter, W D; Schmitt, M; Schneider, O; Spagnolo, P; Tejessy, W; Teubert, F; Tournefier, E; Valassi, Andrea; Wright, A E; Ajaltouni, Ziad J; Badaud, F; Chazelle, G; Deschamps, O; Dessagne, S; Falvard, A; Ferdi, C; Gay, P; Guicheney, C; Henrard, P; Jousset, J; Michel, B; Monteil, S; Montret, J C; Pallin, D; Pascolo, J M; Perret, P; Podlyski, F; Hansen, J D; Hansen, J R; Hansen, P H; Nilsson, B S; Rensch, B; Wäänänen, A; Daskalakis, G; Kyriakis, A; Markou, C; Simopoulou, Errietta; Vayaki, Anna; Blondel, A; Brient, J C; Machefert, F P; Rougé, A; Swynghedauw, M; Tanaka, R; Videau, H L; Focardi, E; Parrini, G; Zachariadou, K; Corden, M; Georgiopoulos, C H; Antonelli, A; Bencivenni, G; Bologna, G; Bossi, F; Campana, P; Capon, G; Chiarella, V; Laurelli, P; Mannocchi, G; Murtas, F; Murtas, G P; Passalacqua, L; Pepé-Altarelli, M; Chalmers, M; Kennedy, J; Lynch, J G; Negus, P; O'Shea, V; Räven, B; Smith, D; Teixeira-Dias, P; Thompson, A S; Ward, J J; Cavanaugh, R J; Dhamotharan, S; Geweniger, C; Hanke, P; Hepp, V; Kluge, E E; Leibenguth, G; Putzer, A; Tittel, K; Werner, S; Wunsch, M; Beuselinck, R; Binnie, David M; Cameron, W; Dornan, Peter J; Girone, M; Goodsir, S M; Marinelli, N; Martin, E B; Nash, J; Nowell, J; Przysiezniak, H; Sciabà, A; Sedgbeer, J K; Thompson, J C; Thomson, E; Williams, M D; Ghete, V M; Girtler, P; Kneringer, E; Kuhn, D; Rudolph, G; Bowdery, C K; Buck, P G; Ellis, G; Finch, A J; Foster, F; Hughes, G; Jones, R W L; Robertson, N A; Smizanska, M; Williams, M I; Giehl, I; Hölldorfer, F; Jakobs, K; Kleinknecht, K; Kröcker, M; Müller, A S; Nürnberger, H A; Quast, G; Renk, B; Rohne, E; Sander, H G; Schmeling, S; Wachsmuth, H W; Zeitnitz, C; Ziegler, T; Bonissent, A; Carr, J; Coyle, P; Ealet, A; Fouchez, D; Payre, P; Rousseau, D; Tilquin, A; Aleppo, M; Antonelli, M; Gilardoni, S S; Ragusa, F; Büscher, V; Dietl, H; Ganis, G; Hüttmann, K; Lütjens, G; Mannert, C; Männer, W; Moser, H G; Schael, S; Settles, Ronald; Seywerd, H C J; Stenzel, H; Wiedenmann, W; Wolf, G; Azzurri, P; Boucrot, J; Callot, O; Chen, S; Davier, M; Duflot, L; Grivaz, J F; Heusse, P; Jacholkowska, A; Lefrançois, J; Serin, L; Veillet, J J; Videau, I; De Vivie de Régie, J B; Zerwas, D; Bagliesi, G; Boccali, T; Bozzi, C; Calderini, G; Dell'Orso, R; Ferrante, I; Giassi, A; Gregorio, A; Ligabue, F; Marrocchesi, P S; Messineo, A; Palla, Fabrizio; Rizzo, G; Sanguinetti, G; Sguazzoni, G; Tenchini, Roberto; Venturi, A; Verdini, P G; Blair, G A; Coles, J; Cowan, G D; Green, M G; Hutchcroft, D E; Jones, L T; Medcalf, T; Strong, J A; Botterill, David R; Clifft, R W; Edgecock, T R; Norton, P R; Tomalin, I R; Bloch-Devaux, B; Colas, P; Fabbro, B; Faïf, G; Lançon, E; Lemaire, M C; Locci, E; Pérez, P; Rander, J; Renardy, J F; Rosowsky, A; Seager, P; Trabelsi, A; Tuchming, B; Vallage, B; Black, S N; Dann, J H; Loomis, C; Kim, H Y; Konstantinidis, N P; Litke, A M; McNeil, M A; Taylor, G; Booth, C N; Cartwright, S L; Combley, F; Hodgson, P N; Lehto, M H; Thompson, L F; Affholderbach, K; Böhrer, A; Brandt, S; Grupen, Claus; Hess, J; Misiejuk, A; Prange, G; Sieler, U; Borean, C; Giannini, G; Gobbo, B; Pütz, J; Rothberg, J E; Wasserbaech, S R; Williams, R W; Armstrong, S R; Elmer, P; Ferguson, D P S; Gao, Y; González, S; Hayes, O J; Hu, H; Jin, S; Kile, J; McNamara, P A; Nielsen, J; Orejudos, W; Pan, Y B; Saadi, Y; Scott, I J; Walsh, J; Von Wimmersperg-Töller, J H; Wu Sau Lan; Wu, X; Zobernig, G

    2000-01-01

    The single top production via flavour changing neutral currents in the reactions ee -> t c/u is searched for in approximately 411 pb-1 of data collected by ALEPH at centre-of-mass energies in the range between 189 and 202 GeV. In total, 58 events are selected in the data to be compared with 50.3 expected from Standard Model backgrounds. No deviation from the Standard Model expectation is observed. A 95\\%~CL upper limit of 0.72 pb on the single top production cross section at 202 GeV is derived assuming a top mass of 174 GeV/c^2 and a 100% branching ratio of the top decay into bW. A model dependent limit on the flavour-changing couplings kZ and kg is obtained by combining all centre-of-mass energies.

  7. Employing a cylindrical single crystal in gas-surface dynamics.

    Science.gov (United States)

    Hahn, Christine; Shan, Junjun; Liu, Ying; Berg, Otto; Kleijn, Aart W; Juurlink, Ludo B F

    2012-03-21

    We describe the use of a polished, hollow cylindrical nickel single crystal to study effects of step edges on adsorption and desorption of gas phase molecules. The crystal is held in an ultra-high vacuum apparatus by a crystal holder that provides axial rotation about a [100] direction, and a crystal temperature range of 89 to 1100 K. A microchannel plate-based low energy electron diffraction/retarding field Auger electron spectrometer (AES) apparatus identifies surface structures present on the outer surface of the cylinder, while a separate double pass cylindrical mirror analyzer AES verifies surface cleanliness. A supersonic molecular beam, skimmed by a rectangular slot, impinges molecules on a narrow longitudinal strip of the surface. Here, we use the King and Wells technique to demonstrate how surface structure influences the dissociation probability of deuterium at various kinetic energies. Finally, we introduce spatially-resolved temperature programmed desorption from areas exposed to the supersonic molecular beam to show how surface structures influence desorption features.

  8. Magnesium single crystals for biomedical applications grown in vertical Bridgman apparatus

    Science.gov (United States)

    Salunke, Pravahan; Joshi, Madhura; Chaswal, Vibhor; Zhang, Guangqi; Rosenbaum, Leonard A.; Dowling, Kevin; Decker, Paul; Shanov, Vesselin

    2016-10-01

    This paper describes successful efforts to design, build, test, and utilize a single crystal apparatus using the Bridgman approach for directional solidification. The created instrument has been successfully tested to grow magnesium single crystals from melt. Preliminary mechanical tests carried out on these single crystals indicate unique and promising properties, which can be harnessed for biomedical applications.

  9. Large pyramid shaped single crystals of BiFeO{sub 3} by solvothermal synthesis method

    Energy Technology Data Exchange (ETDEWEB)

    Sornadurai, D.; Ravindran, T. R.; Paul, V. Thomas; Sastry, V. Sankara [Condensed Matter Physics Division, Materials Science Group, Physical Metallurgy Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu (India); Condensed Matter Physics Division, Materials Science Group (India)

    2012-06-05

    Synthesis parameters are optimized in order to grow single crystals of multiferroic BiFeO{sub 3}. 2 to 3 mm size pyramid (tetrahedron) shaped single crystals were successfully obtained by solvothermal method. Scanning electron microscopy with EDAX confirmed the phase formation. Raman scattering spectra of bulk BiFeO3 single crystals have been measured which match well with reported spectra.

  10. Organic single-crystal light-emitting field-effect transistors

    NARCIS (Netherlands)

    Hotta, Shu; Yamao, Takeshi; Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Growth and characterisation of single crystals constitute a major field of materials science. In this feature article we overview the characteristics of organic single-crystal light-emitting field-effect transistors (OSCLEFETs). The contents include the single crystal growth of organic semiconductor

  11. Room-Temperature Tensile Behavior of Oriented Tungsten Single Crystals with Rhenium in Dilute Solid Solution

    Science.gov (United States)

    1966-01-01

    SINGLE CRYSTALS WITH RHENIUM IN DILUTE SOLID SOLUTION Sby M. Garfinkle Lewis Research Center Cleveland, Ohio 20060516196 NATIONAL AERONAUTICS AND...WITH RHENIUM IN DILUTE SOLID SOLUTION By M. Garfinkle Lewis Research Center Cleveland, Ohio NATIONAL AERONAUTICS AND SPACE ADMINISTRATION For sale by...ORIENTED TUNGSTEN SINGLE CRYSTALS WITH RHENIUM IN DILUTE SOLID SOLUTION * by M. Garfinkle Lewis Research Center SUMMARY Tungsten single crystals

  12. Crystal structure and magnetization of a Co3B2O6 single crystal

    Science.gov (United States)

    Kazak, N. V.; Platunov, M. S.; Ivanova, N. B.; Knyazev, Yu. V.; Bezmaternykh, L. N.; Eremin, E. V.; Vasil'ev, A. D.; Bayukov, O. A.; Ovchinnikov, S. G.; Velikanov, D. A.; Zubavichus, Ya. V.

    2013-07-01

    The crystal structure and magnetic properties of Co3B2O6 single crystals are studied. Orthorhombic symmetry with space group Pnnm is detected at room temperature. The measurements of static magnetization and dynamic magnetic susceptibility reveal two magnetic anomalies at T 1 = 33 K and T 2 = 10 K and an easy-axis magnetic anisotropy. The effective magnetic moment indicates a high-spin state of the Co2+ ion. A spin-flop transition is found at low temperatures and H sf = 23 kOe. EXAFS spectra of the K-edge absorption of Co are recorded at various temperatures, the temperature-induced changes in the parameters of the local environment of cobalt are analyzed, and the effective Co-Co and Co-O distances are determined. The magnetic interactions in the crystal are analyzed in terms of an indirect coupling model.

  13. Strength anomaly in B2 FeAl single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoshimi, K.; Hanada, S.; Yoo, M.H. [Oak Ridge National Lab., TN (United States); Matsumoto, N. [Tohoku Univ. (Japan). Graduate School

    1994-12-31

    Strength and deformation microstructure of B2 Fe-39 and 48%Al single crystals (composition given in atomic percent), which were fully annealed to remove frozen-in vacancies, have been investigated at temperatures between room temperature and 1073K. The hardness of as-homogenized Fe-48Al is higher than that of as-homogenized Fe-39Al while after additional annealing at 698K the hardness of Fe-48Al becomes lower than that of Fe-39Al. Fe-39Al single crystals slowly cooled after homogenizing at a high temperature were deformed in compression as a function of temperature and crystal orientation. A peak of yield strength appears around 0.5T{sub m} (T{sub m} = melting temperature). The orientation dependence of the critical resolved shear stress does not obey Schmid`s law even at room temperature and is quite different from that of b.c.c. metals and B2 intermetallics at low temperatures. At the peak temperature slip transition from <111>-type to <001>-type is found to occur macroscopically and microscopically, while it is observed in TEM that some of the [111] dislocations decompose into [101] and [010] on the (1096I) plane below the peak temperature. The physical sources for the positive temperature dependence of yield stress of B2 FeAl are discussed based on the obtained results.

  14. Growth and Characterization of Lead-free Piezoelectric Single Crystals

    Directory of Open Access Journals (Sweden)

    Philippe Veber

    2015-11-01

    Full Text Available Lead-free piezoelectric materials attract more and more attention owing to the environmental toxicity of lead-containing materials. In this work, we review our first attempts of single crystal grown by the top-seeded solution growth method of BaTiO3 substituted with zirconium and calcium (BCTZ and (K0.5Na0.5NbO3 substituted with lithium, tantalum, and antimony (KNLSTN. The growth methodology is optimized in order to reach the best compositions where enhanced properties are expected. Chemical analysis and electrical characterizations are presented for both kinds of crystals. The compositionally-dependent electrical performance is investigated for a better understanding of the relationship between the composition and electrical properties. A cross-over from relaxor to ferroelectric state in BCTZ solid solution is evidenced similar to the one reported in ceramics. In KNLSTN single crystals, we observed a substantial evolution of the orthorhombic-to-tetragonal phase transition under minute composition changes.

  15. Structural peculiarities of single crystal diamond needles of nanometer thickness

    Science.gov (United States)

    Orekhov, Andrey S.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Loginov, Artem B.; Chuvilin, Andrey L.; Obraztsov, Alexander N.

    2016-11-01

    Diamond is attractive for various applications due to its unique mechanical and optical properties. In particular, single crystal diamond needles with high aspect ratios and sharp apexes of nanometer size are demanded for different types of optical sensors including optically sensing tip probes for scanning microscopy. This paper reports on electron microscopy and Raman spectroscopy characterization of the diamond needles having geometrically perfect pyramidal shapes with rectangular atomically flat bases with (001) crystallography orientation, 2-200 nm sharp apexes, and with lengths from about 10-160 μm. The needles were produced by selective oxidation of (001) textured polycrystalline diamond films grown by chemical vapor deposition. Here we study the types and distribution of defects inside and on the surface of the single crystal diamond needles. We show that sp3 type point defects are incorporated into the volume of the diamond crystal during growth, while the surface of the lateral facets is enriched by multiple extended defects. Nitrogen addition to the reaction mixture results in increase of the growth rate on {001} facets correlated with the rise in the concentration of sp3 type defects.

  16. Structural and magnetic studies on copper succinate dihydrate single crystals

    Indian Academy of Sciences (India)

    M P BINITHA; P P PRADYUMNAN

    2017-09-01

    Single crystals of copper succinate dihydrate were grown in silica gel by slow diffusion of copper chloride tosodium metasilicate gel impregnated with succinic acid. The grown crystal was subjected to single crystal X-ray diffractionstudies. In its structure each copper atom is penta co-ordinated to oxygen atoms of four succinate oxygens and oxygenof co-ordinated water molecule. The four bis-bidendate succinate anions form syn–syn bridges among two copper atomsto form a polymeric two-dimensional chain. From room temperature vibrating sample magnetometer (VSM) studies themagnetic moment of the material is calculated as 1.35 Bohr magneton (BM), indicating antiferromagnetic interaction betweencopper atoms and can be explained as due to the orbital overlap of the bridging ligand and the two copper atoms in syn-synorientation. A strong bonding of the magnetic orbital of equatorially oriented Cu atom on both sides of the exchange pathway(Cu–O-C-O–Cu) leads to the anti-ferromagnetic interaction.

  17. Single-Photon Source for Quantum Information Based on Single Dye Molecule Fluorescence in Liquid Crystal Host

    Energy Technology Data Exchange (ETDEWEB)

    Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr., C.R.; Schmid, A.W.; Marshall, K.L.

    2006-08-18

    This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time.

  18. Coherent radiation from 70 GeV and 150 GeV electrons and positrons traversing diamond and Si crystals near axial and planar directions

    Science.gov (United States)

    Medenwaldt, R.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Elsener, K.; Sona, P.; Connell, S. H.; Sellschop, J. P. F.; Avakian, R. O.; Avetisian, A. E.; Taroian, S. P.

    1995-10-01

    Channeling radiation and energy loss for 150 GeV electrons and positrons incident on a 0.5 mm thick diamond and a 0.6 mm thick Si crystal have been measured — near axial and planar directions. It is found that yields from well channeled electrons are enhanced by a factor of two, and those for positrons are reduced by a factor of five, as compared to yields outside the channeling region. The experimental critical angle for channeling agrees very well with the Lindhard angle ψ1. For incidence along planes and close to axial directions, the overall picture of the radiation spectra for electrons and positrons is the same for the high-energy photons, where a strongly enhanced peak is found, as was first discovered in an earlier electron experiment. In diamond, the standard coherent bremsstrahlung has been measured close to the 110 planes but for 10 mrad and 50 mrad from the axis. These experimental results agree well with calculations using the Born approximation.

  19. Electronic properties of graphene-single crystal diamond heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Thuong Nguyen, Thuong; Golsharifi, Mohammad; Amakubo, Suguru; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom); Loh, K. P. [Department of Chemistry, National University of Singapore, 3 Science Drive, Singapore 117543 (Singapore)

    2013-08-07

    Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of ∼0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets.

  20. Crystal Structure, Chemical Bonding and Magnetism Studies for Three Quinary Polar Intermetallic Compounds in the (Eu1−xCax9In8(Ge1−ySny8 (x = 0.66, y = 0.03 and the (Eu1−xCax3In(Ge3−ySn1+y (x = 0.66, 0.68; y = 0.13, 0.27 Phases

    Directory of Open Access Journals (Sweden)

    Hyein Woo

    2015-04-01

    Full Text Available Three quinary polar intermetallic compounds in the (Eu1−xCax9In8(Ge1−ySny8 (x = 0.66, y = 0.03 and the (Eu1−xCax3In(Ge3-ySn1+y (x = 0.66, 0.68; y = 0.13, 0.27 phases have been synthesized using the molten In-metal flux method, and the crystal structures are characterized by powder and single-crystal X-ray diffractions. Two orthorhombic structural types can be viewed as an assembly of polyanionic frameworks consisting of the In(Ge/Sn4 tetrahedral chains, the bridging Ge2 dimers, either the annulene-like “12-membered rings” for the (Eu1−xCax9In8(Ge1−ySny8 series or the cis-trans Ge/Sn-chains for the (Eu1−xCax3In(Ge3−ySn1+y series, and several Eu/Ca-mixed cations. The most noticeable difference between two structural types is the amount and the location of the Sn-substitution for Ge: only a partial substitution (11% occurs at the In(Ge/Sn4 tetrahedron in the (Eu1−xCax9In8(Ge1−ySny8 series, whereas both a complete and a partial substitution (up to 27% are observed, respectively, at the cis-trans Ge/Sn-chain and at the In(Ge/Sn4 tetrahedron in the (Eu1−xCax3In(Ge3−ySn1+y series. A series of tight-binding linear muffin-tin orbital calculations is conducted to understand overall electronic structures and chemical bonding among components. Magnetic susceptibility measurement indicates a ferromagnetic ordering of Eu atoms below 5 K for Eu1.02(1Ca1.98InGe2.87(1Sn1.13.

  1. Rolling-contact deformation of MgO single crystals

    Science.gov (United States)

    Dufrane, K. F.; Glaeser, W. A.

    1976-01-01

    Magnesium oxide single crystals were used as a model bearing material and deformed by rolling contact with a steel ball 0.64 cm in diameter. A dependence of depth of slip on rolling velocity which persisted with increasing numbers of rolling-contact cycles was discovered. The track width, track hardness and dislocation interactions as observed by transmission electron microscopy all increased in a consistent manner with increasing cycles. The rolling-contact state of stress produces a high density of dislocations in a localized zone. Dislocation interaction in this zone produces cleavage-type cracks after a large number of rolling-contact cycles. The orientation of the crystal influences the character of dislocation accumulation.

  2. α-Lead tellurite from single-crystal data.

    Science.gov (United States)

    Zavodnik, Valery E; Ivanov, Sergey A; Stash, Adam I

    2008-02-06

    The crystal structure of the title compound, α-PbTeO(3) (PTO), has been reported previously by Mariolacos [Anz. Oesterr. Akad. Wiss. Math. Naturwiss. Kl. (1969), 106, 128-130], refined on powder data. The current determination at room temperature from data obtained from single crystals grown by the Czochralski method shows a significant improvement in the precision of the geometric parameters when all atoms have been refined anisotropically. The selection of a centrosymmetric (C2/c) structure model was confirmed by the second harmonic generation test. The asymmetric unit contains three formula units. The structure of PTO is built up of three types of distorted [PbO(x)] polyhedra (x = 7 and 9) which share their O atoms with TeO(3) pyramidal units. These main anionic polyhedra are responsible for establishing the two types of tunnel required for the stereochemical activity of the lone pairs of the Pb(2+) and Te(4+) cations.

  3. α-Lead tellurite from single-crystal data

    Directory of Open Access Journals (Sweden)

    Adam I. Stash

    2008-03-01

    Full Text Available The crystal structure of the title compound, α-PbTeO3 (PTO, has been reported previously by Mariolacos [Anz. Oesterr. Akad. Wiss. Math. Naturwiss. Kl. (1969, 106, 128–130], refined on powder data. The current determination at room temperature from data obtained from single crystals grown by the Czochralski method shows a significant improvement in the precision of the geometric parameters when all atoms have been refined anisotropically. The selection of a centrosymmetric (C2/c structure model was confirmed by the second harmonic generation test. The asymmetric unit contains three formula units. The structure of PTO is built up of three types of distorted [PbOx] polyhedra (x = 7 and 9 which share their O atoms with TeO3 pyramidal units. These main anionic polyhedra are responsible for establishing the two types of tunnel required for the stereochemical activity of the lone pairs of the Pb2+ and Te4+ cations.

  4. Shape-memory effect in Co-Ni single crystal

    Institute of Scientific and Technical Information of China (English)

    周伟敏; 刘岩; 张少宗; 江伯鸿

    2004-01-01

    The thermal shape-memory effect at room temperature for Co-32% Ni(mass fraction) magnetic shape memory alloy of single crystal was presented. When compressing the sample along the [001] direction at room temperature, strain can be recovered to some extent during later heating and the recovery rate varies with the pre-strain.But no obvious recoverable strain can be obtained along other crystal directions. For the thermal-mechanical training of the sample along [001], the recovery strain decreases obviously during the second round of compress and nearly no recovery happens after the third round of compress. A possible mechanism based on reversible motions of Shockley partial dislocations was proposed.

  5. Water weakening in experimentally deformed milky quartz single crystals

    Science.gov (United States)

    Stunitz, H.; Thust, A.; Kilian, R.; Heilbronner, R.; Behrens, H.; Tarantola, A.; Fitz Gerald, J. D.

    2015-12-01

    Natural single crystals of quartz have been experimentally deformed in two orientations: (1) normal to one prism-plane, (2) In O+ orientation at temperatures of 900 and 1000°C, pressures of 1.0 and 1.5 GPa, and strain rates of ~1 x 10-6s-1. The starting material is milky quartz, consisting of dry quartz (H2O contents of recycling of H2O between FI´s, dislocation generation at very small fluid inclusions, incorporation of structurally bound H into dislocation cores, and release of H2O from dislocations back into FI´s during recovery. Cracking and crack healing play an important role in the recycling process and imply a close interrelationship between brittle and crystal plastic deformation. The H2O weakening by this process is of a disequilibrium nature and thus depends on the amount of H2O available.

  6. Multiband Effects on -FeSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic C.; Lei, H.; Graf, D.; Hu, R.; Ryu, H.; Choi, E.S.; Tozer, S.W.

    2012-03-01

    We present the upper critical fields {mu}{sub 0}H{sub c2}(T) and Hall effect in {beta}-FeSe single crystals. The {mu}{sub 0}H{sub c2}(T) increases as the temperature is lowered for fields applied parallel and perpendicular to (101), the natural growth facet of the crystal. The {mu}{sub 0}H{sub c2}(T) for both field directions and the anisotropy at low temperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate {mu}{sub 0}H{sub c2}(T) and electronic transport in the normal state.

  7. Monitoring Lidocaine Single-Crystal Dissolution by Ultraviolet Imaging

    DEFF Research Database (Denmark)

    Ostergaard, Jesper; Ye, Fengbin; Rantanen, Jukka

    2011-01-01

    Dissolution critically affects the bioavailability of Biopharmaceutics Classification System class 2 compounds. When unexpected dissolution behaviour occurs, detailed studies using high information content technologies are warranted. In the present study, an evaluation of real‐time ultraviolet (UV......) imaging for conducting single‐crystal dissolution studies was performed. Using lidocaine as a model compound, the aim was to develop a setup capable of monitoring and quantifying the dissolution of lidocaine into a phosphate buffer, pH 7.4, under stagnant conditions. A single crystal of lidocaine...... was placed in the quartz dissolution cell and UV imaging was performed at 254 nm. Spatially and temporally resolved mapping of lidocaine concentration during the dissolution process was achieved from the recorded images. UV imaging facilitated the monitoring of lidocaine concentrations in the dissolution...

  8. Microhardness studies on nonlinear optical -alanine single crystals

    Indian Academy of Sciences (India)

    R Hanumantharao; S Kalainathan

    2013-06-01

    Vickers and Knoop microhardness tests were carried out on grown -alanine single crystals by slow evaporation technique over a load range of 10–50 g on selected broad (2 0 3) plane. Vickers (v) and Knoop (k) microhardness for the above loads were found to be in the range of 60–71 kg/mm2 and 35–47 kg/mm2, respectively. Vickers microhardness number (v) and Knoop microhardness number (k) were found to increase with increasing load. Meyer’s index number () calculated from v shows that the material belongs to the soft material category. Using Wooster’s empirical relation, the elastic stiffness constant (11) was calculated from Vickers hardness values. Young’s modulus was calculated using Knoop hardness values. Hardness anisotropy has been observed in accordance with the orientation of the crystal.

  9. Micromechanical Behavior of Single-Crystal Superalloy with Different Crystal Orientations by Microindentation

    Directory of Open Access Journals (Sweden)

    Jinghui Li

    2015-01-01

    Full Text Available In order to investigate the anisotropic micromechanical properties of single-crystal nickel-based superalloy DD99 of four crystallographic orientations, (001, (215, (405, and (605, microindentation test (MIT was conducted with different loads and loading velocities by a sharp Berkovich indenter. Some material parameters reflecting the micromechanical behavior of DD99, such as microhardness H, Young’s modulus E, yield stress σy, strain hardening component n, and tensile strength σb, can be obtained from load-displacement relations. H and E of four different crystal planes evidently decrease with the increase of h. The reduction of H is due to dislocation hardening while E is related to interplanar spacing and crystal variable. σy of (215 is the largest among four crystal planes, followed by (605, and (001 has the lowest value. n of (215 is the lowest, followed by (605, and that of (001 is the largest. Subsequently, a simplified elastic-plastic material model was employed for 3D microindentation simulation of DD99 with various crystal orientations. The simulation results agreed well with experimental, which confirmed the accuracy of the simplified material model.

  10. Single Crystal Structure Determination of Alumina to 1 Mbar

    Science.gov (United States)

    Dong, H.; Zhang, L.; Prakapenka, V.; Mao, H.

    2014-12-01

    Aluminum oxide (Al2O3) is an important ceramic material and a major oxide in the earth. Additionally, alumina is a widely used pressure standard in static high-pressure experiments (Cr3+-bearing corundum, ruby). The changes of its crystal structure with pressure (P) and temperature (T) are important for its applications and understanding its physical properties in the deep Earth. There have been numerous reports on the high P-T polymorphs of alumina. Previous theoretical calculations and experiments suggest that the crystal structure of Al2O3 evolves greatly at high P-T. In this study, we used the newly developed multigrain crystallography method combined with single-crystal x-ray diffraction analysis technique for the structure determination of alumina at high P-T to provide single-crystal structure refinement for high-pressure phases of Al2O3. Alumina powder was mixed with ~10% Pt and Ne was used as both pressure transmitting media and thermal insulating layers during laser-heating. Coarse-grained aggregates of Al2O3 were synthesized in a laser-heated diamond anvil cell. The structure change of Al2O3 was monitored by in situ x-ray diffraction at ~1 Mbar and 2700 K. The results allow us to distinguish the structural differences between the Rh2O3 (II) structure (space group Pbcn) and perovskite structure (space group Pbnm) for the first high-pressure phase of Al2O3. More detailed results will be discussed in the later work.

  11. Modeling the anisotropic shock response of single-crystal RDX

    Science.gov (United States)

    Luscher, Darby

    Explosives initiate under impacts whose energy, if distributed homogeneously throughout the material, translates to temperature increases that are insufficient to drive the rapid chemistry observed. Heterogeneous thermomechanical interactions at the meso-scale (i.e. between single-crystal and macroscale) leads to the formation of localized hot spots. Direct numerical simulations of mesoscale response can contribute to our understanding of hot spots if they include the relevant deformation mechanisms that are essential to the nonlinear thermomechanical response of explosive molecular crystals. We have developed a single-crystal model for the finite deformation thermomechanical response of cyclotrimethylene trinitramine (RDX). Because of the low symmetry of RDX, a complete description of nonlinear thermoelasticity requires a careful decomposition of free energy into components that represent the pressure-volume-temperature (PVT) response and the coupling between isochoric deformation and both deviatoric and hydrostatic stresses. An equation-of-state (EOS) based on Debye theory that defines the PVT response was constructed using experimental data and density functional theory calculations. This EOS replicates the equilibrium states of phase transformation from alpha to gamma polymorphs observed in static high-pressure experiments. Lattice thermoelastic parameters defining the coupled isochoric free energy were obtained from molecular dynamics calculations and previous experimental data. Anisotropic crystal plasticity is modeled using Orowan's expression relating slip rate to dislocation density and velocity. Details of the theory will be presented followed by discussion of simulations of flyer plate impact experiments, including recent experiments diagnosed with in situ X-ray diffraction at the Advanced Photon Source. Impact conditions explored within the experimental effort have spanned shock pressures ranging from 1-10 GPa for several crystallographic orientations

  12. Ge/SiGe superlattices for nanostructured thermoelectric modules

    Energy Technology Data Exchange (ETDEWEB)

    Chrastina, D., E-mail: daniel@chrastina.net [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Cecchi, S. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Hague, J.P. [Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes, MK7 6AA (United Kingdom); Frigerio, J. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Samarelli, A.; Ferre–Llin, L.; Paul, D.J. [School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8LT (United Kingdom); Müller, E. [Electron Microscopy ETH Zurich (EMEZ), ETH-Zürich, CH-8093 (Switzerland); Etzelstorfer, T.; Stangl, J. [Institut für Halbleiter und Festkörperphysik, Universität Linz, A-4040 Linz (Austria); Isella, G. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy)

    2013-09-30

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices.

  13. The nature of intrinsic luminescence in glasses and crystals of CaO-Ga2O3-GeO2 system

    OpenAIRE

    Padlyak B.

    2007-01-01

    Intrinsic luminescence of undoped glasses and crystals of CaO-Ga2O3-GeO2 system with different compositions is investigated. Using synchrotron excitation, the emission and time-resolved luminescence excitation spectra, as well as the luminescence kinetics are studied at T = 8 K for the undoped glasses and crystals with garnet Ca3Ga2Ge3O12 composition and the glasses with Ca3Ga2O6 composition. The observed luminescence spectra strongly depend on the basic glass composition and the excitation e...

  14. Fabrication of ZnO Bi-crystals with twist boundaries using Co doped ZnO single crystals

    CERN Document Server

    Ohashi, N; Ohgaki, T; Tsurumi, T; Fukunaga, O; Haneda, H; Tanaka, J

    1999-01-01

    Zn O single crystals doped with Co were grown by using a flux method and their electrical properties were investigated by Hall effect. Then, these crystals were polished with diamond paste and bonded to form bi-crystal by hot pressing under a pressure of 10 MPa at 1000 .deg. C. The bi-crystals showed nonlinear I-V curves, and the curvature of I-V relation agreed with that for Co-doped polycrystalline ZnO.

  15. Pressure-induced superconductivity in Bi single crystals

    Science.gov (United States)

    Li, Yufeng; Wang, Enyu; Zhu, Xiyu; Wen, Hai-Hu

    2017-01-01

    Measurements on resistivity and magnetic susceptibility have been carried out for Bi single crystals under pressures up to 10.5 GPa. The temperature dependent resistivity shows a semimetallic behavior at ambient and low pressures (below about 1.6 GPa). This is followed by an upturn of resistivity in the low temperature region when the pressure is increased, which is explained as a semiconductor behavior. This feature gradually gets enhanced up to a pressure of about 2.52 GPa. Then a nonmonotonic temperature dependent resistivity appears upon further increasing pressure, which is accompanied by a strong suppression to the low temperature resistivity upturn. Simultaneously, a superconducting transition occurs at about 3.92 K under a pressure of about 2.63 GPa. With further increasing pressure, a second superconducting transition emerges at about 7 K under about 2.8 GPa. For these two superconducting states, the superconductivity induced magnetic screening volumes are quite large. As the pressure further increases to 8.1 GPa, we observe the third superconducting transition at about 8.2 K. The resistivity measurements under magnetic field allow us to determine the upper critical fields μ0Hc 2 of the superconducting phases. The upper critical field for the phase with Tc=3.92 K is extremely low. Based on the Werthamer-Helfand-Hohenberg (WHH) theory, the estimated value of μ0Hc 2 for this phase is about 0.103 T, while the upper critical field for the phase with Tc=7 K is very high with a value of about 4.56 T. Finally, we present a pressure dependent phase diagram of Bi single crystals. Our results reveal the interesting and rich physics in bismuth single crystals under high pressure.

  16. Characteristics of photoconductivity in thallium monosulfide single crystals

    Indian Academy of Sciences (India)

    I M Ashraf; H A Elshaikh; A M Badr

    2007-03-01

    This work elucidates the photoconductivity (PC) of thallium monosulfide single crystals. Results are obtained in the 77-300 K temperature range, 1500-4500 V lx excitation intensity, 6-18 V applied voltage, and in the 640-1500 nm wavelength range. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the photocurrent are studied in different values of light intensity, applied voltage and temperature. Dependencies of carrier lifetime on light intensity, applied voltage and temperature are also investigated as a result of the ac-PC measurements. The temperature dependence of the energy gap width was described by studying the dc-photoconductivity (dc-PC).

  17. Exciton optical transitions in a hexagonal boron nitride single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Museur, L. [Laboratoire de Physique des Lasers - LPL, CNRS UMR 7538, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Brasse, G.; Maine, S.; Ducastelle, F.; Loiseau, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); Pierret, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); CEA-CNRS, Institut Neel/CNRS, Universite J. Fourier, CEA/INAC/SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex 9 (France); Attal-Tretout, B. [ONERA - Departement Mesures Physiques - DMPh, 27 Chemin de la Huniere, 91761 Palaiseau Cedex (France); Barjon, J. [GEMaC, Universite de Versailles St Quentin, CNRS Bellevue, 1 Place Aristide Briand, 92195 Meudon Cedex (France); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Kanaev, A. [Laboratoire des Sciences des Procedes et des Materiaux - LSPM, CNRS UPR 3407, Universite Paris 13, 93430 Villetaneuse (France)

    2011-06-15

    Near band gap photoluminescence (PL) of a hexagonal boron nitride single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by trapped-exciton optical transitions, while the photoluminescence excitation (PLE) spectra show features assigned to free excitons. Complementary photoconductivity and PLE measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Oxygen diffusion in [alpha]-Zr single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hood, G.M. (Reactor Materials Research Branch, Chalk River Laboratories, Atomic Energy of Canada Ltd., Chalk River, Ontario (Canada)); Zou, H. (Reactor Materials Research Branch, Chalk River Laboratories, Atomic Energy of Canada Ltd., Chalk River, Ontario (Canada)); Herbert, S. (Reactor Materials Research Branch, Chalk River Laboratories, Atomic Energy of Canada Ltd., Chalk River, Ontario (Canada)); Schultz, R.J. (Reactor Materials Research Branch, Chalk River Laboratories, Atomic Energy of Canada Ltd., Chalk River, Ontario (Canada)); Nakajima, H. (Department of Materials Science and Technology, Iwate University, Morioka 020 (Japan)); Jackman, J.A. (Metals Science and Technology, CANMET, Booth St., Ottawa, Ontario (Canada))

    1994-06-01

    Oxygen diffusion coefficients, D, have been measured in [alpha]-Zr single crystals in directions both parallel and perpendicular to the c-axis. The measurements, made in the interval 610-870 K, show that diffusion anisotropy is weak and that D is little affected by specimen impurity content. The values determined here are in good agreement with the bulk of previous literature data for the same temperature interval but they are about ten times larger than corresponding values found in a very recent AES study. ((orig.))

  19. Diffusion of Ti in [alpha]-Zr single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hood, G.M. (Reactor Materials Division Atomic Energy of Canada Ltd., Chalk River Laboratories, Chalk River, Ontario (Canada)); Zou, H. (Reactor Materials Division Atomic Energy of Canada Ltd., Chalk River Laboratories, Chalk River, Ontario (Canada)); Schultz, R.J. (Reactor Materials Division Atomic Energy of Canada Ltd., Chalk River Laboratories, Chalk River, Ontario (Canada)); Bromley, E.H.; Jackman, J.A. (CANMET, Metals Technology Laboratories, Ottawa, Ontario (Canada))

    1994-12-01

    Ti diffusion coefficients (D) have been measured in nominally pure [alpha]-Zr single crystals (773-1124 K) in directions both parallel (D[sub pa]) and perpendicular (D[sub pe], few data) to the c-axis: tracer techniques and secondary ion mass spectrometry were used to determine the diffusion profiles. The results show a temperature dependence which may be interpreted in terms of two regions of diffusion behaviour. Above 1035 K, region I, diffusion conforms to the expectations of intrinsic behaviour with normal Arrhenius law constants: Below 1035 K, region II, D's appear to be enhanced with respect to an extrapolation of region I behaviour. ((orig.))

  20. Depressurization amorphization of single-crystal boron carbide.

    Science.gov (United States)

    Yan, X Q; Tang, Z; Zhang, L; Guo, J J; Jin, C Q; Zhang, Y; Goto, T; McCauley, J W; Chen, M W

    2009-02-20

    We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressurization amorphization results from pressure-induced irreversible bending of C-B-C atomic chains cross-linking 12 atom icosahedra at the rhombohedral vertices.

  1. Growth of bulk gadolinium pyrosilicate single crystals for scintillators

    Science.gov (United States)

    Gerasymov, I.; Sidletskiy, O.; Neicheva, S.; Grinyov, B.; Baumer, V.; Galenin, E.; Katrunov, K.; Tkachenko, S.; Voloshina, O.; Zhukov, A.

    2011-03-01

    Ce, Pr, and La-doped gadolinium pyrosilicate Gd2Si2O7 (GPS) single crystals were grown by the Czochralski and Top Seeded Solution Growth (TSSG) techniques for the first time. Formation conditions of different pyrosilicate phases were determined. X-ray luminescence integral intensity of Ce-doped GPS is about one order of magnitude higher in comparison with gadolinium oxyorthosilicate Gd2SiO5:Ce (GSO:Ce). All samples demonstrate temperature stability of luminescence yield up to 400 K.

  2. Nonlinear microwave switching response of BSCCO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Jacobs, T.; Sridhar, S. [Northeastern Univ., Boston, MA (United States). Dept. of Physics; Willemsen, B.A. [Northeastern Univ., Boston, MA (United States). Dept. of Physics]|[Rome Lab., Hanscom AFB, MA (United States); Li, Qiang [Brookhaven National Lab., Upton, NY (United States); Gu, G.D.; Koshizuka, N. [Superconductivity Research Lab., Tokyo (Japan)

    1996-06-01

    Measurements of the surface impedance in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystal with microwave currents flowing along the {cflx c} axis show clear evidence of a step-like nonlinearity. The surface resistance switches between apparently quantized levels for microwave field strength changes < 1 mG. This nonlinear response can arise from the presence of intrinsic Josephson junctions along the {cflx c} axis of these samples driven by the microwave current.

  3. Aluminum-rich mesoporous MFI - type zeolite single crystals

    DEFF Research Database (Denmark)

    Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid

    2005-01-01

    Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source...... are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ammonia temperature programmed desorption (NH3-TPD), and N-2 adsorption measurements. The obtained zeolites combine the high crystallinity and the characteristic micropores of zeolites with an intracrystalline mesopore system...

  4. EPR studies of gamma-irradiated taurine single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bulut, A. E-mail: abulut@samsun.omu.edu.tr; Karabulut, B.; Tapramaz, R.; Koeksal, F

    2000-04-01

    An EPR study of gamma-irradiated taurine [C{sub 2}H{sub 7}NO{sub 3}S] single crystal was carried out at room temperature. The EPR spectra were recorded in the three at mutually perpendicular planes. There are two magnetically distinct sites in monoclinic lattice. The principle values of g and hyperfine constants for both sites were calculated. The results have indicated the presence of {sup 32}SO{sup -}{sub 2} and {sup 33}SO{sup -}{sub 2} radicals. The hyperfine values of {sup 33}SO{sup -}{sub 2} radical were used to obtain O-S-O bond angle for both sites.

  5. Single Molecule Studies on Dynamics in Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Daniela Täuber

    2013-09-01

    Full Text Available Single molecule (SM methods are able to resolve structure related dynamics of guest molecules in liquid crystals (LC. Highly diluted small dye molecules on the one hand explore structure formation and LC dynamics, on the other hand they report about a distortion caused by the guest molecules. The anisotropic structure of LC materials is used to retrieve specific conformation related properties of larger guest molecules like conjugated polymers. This in particular sheds light on organization mechanisms within biological cells, where large molecules are found in nematic LC surroundings. This review gives a short overview related to the application of highly sensitive SM detection schemes in LC.

  6. Single crystal piezoelectric composites for advanced NDT ultrasound

    Science.gov (United States)

    Jiang, Xiaoning; Snook, Kevin; Hackenberger, Wesley S.; Geng, Xuecang

    2007-04-01

    In this paper, the design, fabrication and characterization of PMN-PT single crystal/epoxy composites are reported for NDT ultrasound transducers. Specifically, 1-3 PMN-PT/epoxy composites with center frequencies of 5 MHz - 40 MHz were designed and fabricated using either the dice-and-fill method or a photolithography based micromachining process. The measured electromechanical coefficients for composites with frequency of 5 MHz - 15 MHz were about 0.78-0.83, and the coupling coefficients for composites with frequencies of 25 MHz- 40 MHz were about 0.71-0.72. The dielectric loss remains low (advanced NDT ultrasound applications.

  7. 9R structure in drawn industrial single crystal copper wires

    Institute of Scientific and Technical Information of China (English)

    CHEN Jian; YAN Wen; FAN Xin-hui

    2009-01-01

    By using transmission electron microscopy, the microstructures of drawn industrial single crystal copper wires produced by Ohno Continuous Casting(OCC) process were analyzed. The results show that the typical microstructures in the wires mainly include extended planar dislocation boundaries, a small fraction of twins and some dislocation cells sharing boundaries parallel to drawn direction. Besides the typical microstructures, 9R structure configurations were observed in the wires. The formation of 9R polytypes may be caused by the coupled emission of Shockley dislocations from a boundary.

  8. Tensor tomography of stresses in cubic single crystals

    Directory of Open Access Journals (Sweden)

    Dmitry D. Karov

    2015-03-01

    Full Text Available The possibility of optical tomography applying to investigation of a two-dimensional and a three-dimensional stressed state in single cubic crystals has been studied. Stresses are determined within the framework of the Maxwell piezo-optic law (linear dependence of the permittivity tensor on stresses and weak optical anisotropy. It is shown that a complete reconstruction of stresses in a sample is impossible both by translucence it in the parallel planes system and by using of the elasticity theory equations. For overcoming these difficulties, it is offered to use a method of magnetophotoelasticity.

  9. Pb{sub 4.7}Ba{sub 0.3}Ge{sub 3}O{sub 11} crystals as new acoustically induced nonlinear optical materials

    Energy Technology Data Exchange (ETDEWEB)

    Zmija, J.; Kaddouri, H. [Perpignan Univ. (France). LP2A; Majchrowski, A.; Mierczyk, Z. [Inst. of Applied Physics, MUT, Warsaw (Poland); Kityk, I.V. [Inst. of Physics Czestochowa (Poland)

    2001-07-01

    Acoustically induced optical second harmonic generation (SHG) and two-photon absorption (TPA) in ferroelectric Pb{sub 4.7}Ba{sub 0.3}Ge{sub 3}O{sub 11} crystals have been found. We have found that with increasing acoustical power, the SHG for YAG:Nd laser light ({lambda}=1.06 {mu}m) increases and achieves its maximum value at acoustical power density about 1.75 W/cm{sup 2}. The evaluated SHG values were 23% less comparing with {chi}{sub 222} tensor of the KDP single crystals. With decreasing temperature, the acoustically induced SHG signal strongly increases below 29 K. The maximal acoustically induced SHG has been observed at acoustical frequencies lying within the ranges 12-17 kHz, 22-23 kHz and above 26 kHz. This behavior reflects nonlinear superposition of the nonlinear optical susceptibilities stimulated by externally-induced electron-phonon anharmonicity. We have observed substantial increase of the TPA (for the acoustical power W= 1.8 W/cm{sup 2}) at high hydrostatic pressures (about 16 GPa) and low temperatures (below 16 K). This one confirms complicated influence of the electron-phonon interactions in the ferroelectrics on the observed nonlinear optical dependences. (orig.)

  10. Low-temperature (˜180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

    Science.gov (United States)

    Matsumura, Ryo; Chikita, Hironori; Kai, Yuki; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, Masanobu

    2015-12-01

    To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (˜180 °C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ˜10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (˜250 °C).

  11. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    Science.gov (United States)

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product.

  12. Single-pion production in pp collisions at 0.95 GeV/c (II)

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-Samad, S. [Atomic Energy Authority NRC Cairo, Cairo (Egypt); Bilger, R.; Clement, H.; Dietrich, M.; Doroshkevich, E.; Ehrhardt, K.; Erhardt, A.; Kress, J.; Meier, R.; Wagner, G.J.; Weidlich, U.; Zhang, G. [Physikalisches Institut der Universitaet Tuebingen, Tuebingen (Germany); Brinkmann, K.T.; Freiesleben, H.; Jaekel, R.; Jakob, B.; Karsch, L.; Kuhlmann, E.; Schulte-Wissermann, M.; Sun, G.Y. [Technische Universitaet Dresden, Dresden (Germany); Dshemuchadse, S. [Technische Universitaet Dresden, Dresden (Germany); Forschungszentrum Rossendorf, Dresden (Germany); Eyrich, W.; Hauffe, J.; Schroeder, W.; Stinzing, F.; Waechter, J.; Wagner, M.; Wirth, S. [Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erlangen-Nuernberg (Germany); Filippi, A.; Marcello, S. [University of Torino (Italy); INFN, Sezione di Torino, Torino (Italy); Fritsch, M. [Ruhr-Universitaet Bochum, Bochum (Germany); Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erlangen-Nuernberg (Germany); Geyer, R.; Gillitzer, A.; Hesselbarth, D.; Kilian, K.; Marwinski, S.; Morsch, H.P.; Ritman, J.; Roderburg, E. [Forschungszentrum Juelich, Juelich (Germany); Moeller, K.; Naumann, L. [Forschungszentrum Rossendorf, Dresden (Germany); Schoenmeier, P. [Technische Universitaet Dresden, Dresden (Germany); Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erlangen-Nuernberg (Germany); Wilms, A. [Ruhr-Universitaet Bochum, Bochum (Germany)

    2009-03-15

    The single-pion production reactions pp{yields}d{pi}{sup +}, pp{yields}np{pi}{sup +} and pp{yields}pp{pi}{sup 0} were measured at a beam momentum of 0.95GeV/c (T{sub p}{approx}400 MeV) using the short version of the COSY-TOF spectrometer. The central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements from other detector parts. Thus all pion production channels were recorded with 1-4 overconstraints. The main emphasis is put on the presentation and discussion of the np{pi}{sup +} channel, since the results on the other channels have already been published previously. The total and differential cross-sections obtained are compared to theoretical calculations. In contrast to the pp{pi}{sup 0} channel we observe in the np{pi}{sup +} channel a strong influence of the {delta} excitation. In particular, the pion angular distribution exhibits a (3 cos{sup 2}{theta}+1)-dependence, typical for a pure s-channel {delta} excitation and identical to that observed in the d{pi}{sup +} channel. Since the latter is understood by a s-channel resonance in the {sup 1} D{sub 2}pn partial wave, we discuss an analogous scenario for the pn{pi}{sup +} channel. (orig.)

  13. Single-pion production in pp collisions at 0.95 GeV/c (I)

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-Samad, S. [Atomic Energy Authority NRC, Cairo (Egypt); Bilger, R.; Clement, H.; Dietrich, M.; Doroshkevich, E.; Erhardt, A.; Kress, J.; Meier, R.; Wagner, G.J.; Weidlich, U.; Zhang, G. [Physikalisches Institut der Universitaet Tuebingen, Tuebingen (Germany); Brinkmann, K.T.; Freiesleben, H.; Jaekel, R.; Jakob, B.; Karsch, L.; Kuhlmann, E.; Schulte-Wissermann, M.; Sun, G.Y. [Technische Universitaet Dresden (Germany); Dshemuchadse, S. [Forschungszentrum Rossendorf (Germany); Technische Univ. Dresden (Germany); Eyrich, W.; Hauffe, J.; Schroeder, W.; Stinzing, F.; Waechter, J.; Wagner, M.; Wirth, S. [Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany); Filippi, A.; Marcello, S. [University of Torino and INFN, Sezione di Torino (Italy); Fritsch, M. [Erlangen-Nuernberg Univ. (Germany); Ruhr-Univ. Bochum (Germany); Geyer, R.; Gillitzer, A.; Hesselbarth, D.; Kilian, K.; Marwinski, S.; Morsch, H.P.; Roderburg, E. [Forschungszentrum Juelich (Germany); Koch, H.; Steinke, M.; Wilms, A. [Ruhr-Universitaet Bochum (Germany); Moeller, K.; Naumann, L. [Forschungszentrum Rossendorf (Germany); Schoenmeier, P. [Technische Univ. Dresden (Germany); Erlangen-Nuernberg Univ. (Germany)

    2006-11-15

    The single-pion production reactions pp{yields}d{pi}{sup +}, pp{yields}np{pi}{sup +} and pp{yields}pp{pi}{sup 0} were measured at a beam momentum of 0.95 GeV/c (T{sub p}{approx}400 MeV) using the short version of the COSY-TOF spectrometer. The implementation of a central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements. Thus, all pion production channels were recorded with 1-4 overconstraints. The total and differential cross-sections obtained are compared to previous data and theoretical calculations. Main emphasis is put on the discussion of the pp{pi}{sup 0} channel, where we obtain angular distributions different from previous experimental results, however, partly in good agreement with recent phenomenological and theoretical predictions. In particular, we observe very large anisotropies for the {pi}{sup 0} angular distributions in the kinematical region of small relative proton momenta revealing there a dominance of proton spinflip transitions associated with {pi}{sup 0} s and d partial waves and emphasizing the important role of {pi}{sup 0} d-waves. (orig.)

  14. Single-Pion Production in pp Collisions at =.95 GeV/c (I)

    CERN Document Server

    El-Samad, S A; Brinkmann, K T; Clement, H; Dietrich, M; Doroshkevich, E; Dshemuchadze, S V; Erhardt, A; Eyrich, W; Filippi, A; Freiesleben, H; Fritsch, M; Geyer, R; Gillitzer, A; Hauffe, J; Hesselbarth, D; Jaekel, R; Jakob, B; Karsch, L; Kilian, K; Koch, H; Kress, J; Kuhlmann, E; Marcello, S; Marwinski, S; Meier, R; Möller, K; Morsch, H P; Naumann, Lutz; Roderburg, E; Schoenmeier, P; Schulte-Wissermann, M; Schroeder, W; Steinke, M; Stinzing, F; Sun, G Y; Waechter, J; Wagner, G J; Wagner, M; Weidlich, U; Wilms, A; Wirth, S; Zhang, G; Zupranski, P

    2006-01-01

    The single-pion production reactions $pp\\to d\\pi^+$, $pp\\to np\\pi^+$ and $pp\\to pp\\pi^0$ were measured at a beam momentum of 0.95 GeV/c ($T_p \\approx$ 400 MeV) using the short version of the COSY-TOF spectrometer. The implementation of a central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements. Thus all pion production channels were recorded with 1-4 overconstraints. The total and differential cross sections obtained are compared to previous data and theoretical calculations. Main emphasis is put on the discussion of the $pp\\pi^0$ channel, where we obtain angular distributions different from previous experimental results, however, partly in good agreement with recent phenomenological and theoretical predictions. In particular we observe very large anisotropies for the $\\pi^0$ angular distributions in the kinematical region of small relative proton momenta revealing there a dominance of proton spinflip transitions asso...

  15. Single-Pion Production in pp Collisions at 0.95 GeV/c (II)

    CERN Document Server

    El-Samad, S Abd; Brinkmann, K Th; Clement, H; Dietrich, M; Doroshkevich, E; Dshemuchadse, S; Ehrhardt, K; Erhardt, A; Eyrich, W; Filippi, A; Freiesleben, H; Fritsch, M; Geyer, R; Gillitzer, A; Hauffe, J; Hesselbarth, D; Jaekel, R; Jakob, B; Karsch, L; Kilian, K; Kress, J; Kuhlmann, E; Marcello, S; Marwinski, S; Meier, R; Möller, K; Morsch, H P; Naumann, Lutz; Ritman, J; Roderburg, E; Schoenmeier, P; Schulte-Wissermann, M; Schroeder, W; Stinzing, F; Sun, G Y; Waechter, J; Wagner, G J; Wagner, M; Weidlich, U; Wilms, A; Wirth, S; Zhang, G; Zupranski, P

    2008-01-01

    The single-pion production reactions $pp\\to d\\pi^+$, $pp\\to np\\pi^+$ and $pp\\to pp\\pi^0$ were measured at a beam momentum of 0.95 GeV/c ($T_p \\approx$ 400 MeV) using the short version of the COSY-TOF spectrometer. The central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements from other detector parts. Thus all pion production channels were recorded with 1-4 overconstraints. Main emphasis is put on the presentation and discussion of the $np\\pi^+$ channel, since the results on the other channels have already been published previously. The total and differential cross sections obtained are compared to theoretical calculations. In contrast to the $pp\\pi^0$ channel we find in the $np\\pi^+$ channel a strong influence of the $\\Delta$ excitation already at this energy close to threshold. In particular we find a $(3 cos^2\\Theta + 1)$ dependence in the pion angular distribution, typical for a pure s-channel $\\Delta$ excitation a...

  16. Single-pion production in pp collisions at 0.95 GeV/c (II)

    Science.gov (United States)

    Abd El-Samad, S.; Bilger, R.; Brinkmann, K.-Th.; Clement, H.; Dietrich, M.; Doroshkevich, E.; Dshemuchadse, S.; Ehrhardt, K.; Erhardt, A.; Eyrich, W.; Filippi, A.; Freiesleben, H.; Fritsch, M.; Geyer, R.; Gillitzer, A.; Hauffe, J.; Hesselbarth, D.; Jaekel, R.; Jakob, B.; Karsch, L.; Kilian, K.; Kress, J.; Kuhlmann, E.; Marcello, S.; Marwinski, S.; Meier, R.; Möller, K.; Morsch, H. P.; Naumann, L.; Ritman, J.; Roderburg, E.; Schönmeier, P.; Schulte-Wissermann, M.; Schroeder, W.; Stinzing, F.; Sun, G. Y.; Wächter, J.; Wagner, G. J.; Wagner, M.; Weidlich, U.; Wilms, A.; Wirth, S.; Zhang, G.; Zupranski, P.

    2009-03-01

    The single-pion production reactions pp rightarrow d π+_{} , pp rightarrow np π+_{} and pp rightarrow pp π0_{} were measured at a beam momentum of 0.95GeV/c ( T p ≈ 400 MeV) using the short version of the COSY-TOF spectrometer. The central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements from other detector parts. Thus all pion production channels were recorded with 1-4 overconstraints. The main emphasis is put on the presentation and discussion of the np π+_{} channel, since the results on the other channels have already been published previously. The total and differential cross-sections obtained are compared to theoretical calculations. In contrast to the pp π0_{} channel we observe in the np π+_{} channel a strong influence of the Δ excitation. In particular, the pion angular distribution exhibits a (3 cos2 Θ + 1) -dependence, typical for a pure s -channel Δ excitation and identical to that observed in the d π+_{} channel. Since the latter is understood by a s -channel resonance in the 1 D 2 pn partial wave, we discuss an analogous scenario for the pn π+_{} channel.

  17. Single-pion production in pp collisions at 0.95 GeV/c (I)

    Science.gov (United States)

    Abd El-Samad, S.; Bilger, R.; Brinkmann, K.-Th.; Clement, H.; Dietrich, M.; Doroshkevich, E.; Dshemuchadse, S.; Erhardt, A.; Eyrich, W.; Filippi, A.; Freiesleben, H.; Fritsch, M.; Geyer, R.; Gillitzer, A.; Hauffe, J.; Hesselbarth, D.; Jaekel, R.; Jakob, B.; Karsch, L.; Kilian, K.; Koch, H.; Kress, J.; Kuhlmann, E.; Marcello, S.; Marwinski, S.; Meier, R.; Möller, K.; Morsch, H. P.; Naumann, L.; Roderburg, E.; Schönmeier, P.; Schulte-Wissermann, M.; Schroeder, W.; Steinke, M.; Stinzing, F.; Sun, G. Y.; Wächter, J.; Wagner, G. J.; Wagner, M.; Weidlich, U.; Wilms, A.; Wirth, S.; Zhang, G.; Zupranski, P.

    2006-11-01

    The single-pion production reactions pp → dπ+, pp → npπ+ and pp → ppπ0 were measured at a beam momentum of 0.95GeV/c ( T p ≈ 400MeV) using the short version of the COSY-TOF spectrometer. The implementation of a central calorimeter provided particle identification, energy determination and neutron detection in addition to time-of-flight and angle measurements. Thus, all pion production channels were recorded with 1-4 overconstraints. The total and differential cross-sections obtained are compared to previous data and theoretical calculations. Main emphasis is put on the discussion of the ppπ0 channel, where we obtain angular distributions different from previous experimental results, however, partly in good agreement with recent phenomenological and theoretical predictions. In particular, we observe very large anisotropies for the π0 angular distributions in the kinematical region of small relative proton momenta revealing there a dominance of proton spinflip transitions associated with π0 s and d partial waves and emphasizing the important role of π0 d-waves.

  18. ‘Ionic crystals’ consisting of trinuclear macrocations and polyoxometalate anions exhibiting single crystal to single crystal transformation: breathing of crystals

    Indian Academy of Sciences (India)

    T ARUMUGANATHAN; ASHA SIDDIKHA; SAMAR K DAS

    2017-08-01

    Ion pairing of trinuclear macrocation cluster (known as basic carboxylate), [M ₃ (μ ₃-O) (ClCH ₂COO) ₆ (H ₂O) ₃] ¹⁺ and a Keggin type polyoxometalate cluster anion [SiW ₁₂O₄₀] ⁴⁻ is stabilized with a number of crystal water molecules in composite type compounds [M ₃ (μ ₃-O)(ClCH ₂COO) ₆ (H ₂O) ₃] ₄[SiW ₁₂O₄₀] ·xH ₂O · 2ClCH ₂COOH [M = Fe ³⁺, x = 18(1); M = Cr ³⁺x = 14(2)]. When the crystals of 1 are heated at 85◦C and 135◦C for 3.5 hours in an open atmospheric condition, it goes to [Fe ₃ (μ ₃-O)(ClCH ₂COO) ₆ (H ₂O) ₃] ₄ [SiW ₁₂O₄₀] ·10H ₂O ·2ClCH ₂COOH (dehydrated 1-85o ≡ 1'), and [Fe ₃ (μ ₃-O) (ClCH ₂COO) ₆ (H ₂O) ₃] ₄ [SiW ₁₂O₄₀] · 8H ₂O · 2ClCH ₂COOH (dehydrated 1-135o ≡ 1'') respectively with the loss of considerable amount of lattice water molecules retaining their single crystallinity. On the other hand, the single crystals of compound 2, upon heating at 85◦C or 135◦C for 3.5 hours, undergo ‘crystal-to-crystal transformation’ to the single crystals of [Cr ₃ (μ ₃-O)(ClCH ₂COO) ₆ (H ₂O) ₃] ₄ [SiW₁₂O₄₀]·8H₂O·2ClCH ₂COOH (dehydrated 2 ≡ 2'). Crystal structure analyses show that the parent compounds 1 and 2 undergo molecular rearrangement (molecular motion in the solid state) in respective dehydrated compounds. Remarkably, these dehydrated crystals (1', 1'' and 2'), upon exposure to water vapor at an ambient condition, regenerate the crystals of parent compounds 1 and 2, respectively

  19. Single nanoparticle detection using photonic crystal enhanced microscopy.

    Science.gov (United States)

    Zhuo, Yue; Hu, Huan; Chen, Weili; Lu, Meng; Tian, Limei; Yu, Hojeong; Long, Kenneth D; Chow, Edmond; King, William P; Singamaneni, Srikanth; Cunningham, Brian T

    2014-03-07

    We demonstrate a label-free biosensor imaging approach that utilizes a photonic crystal (PC) surface to detect surface attachment of individual dielectric and metal nanoparticles through measurement of localized shifts in the resonant wavelength and resonant reflection magnitude from the PC. Using a microscopy-based approach to scan the PC resonant reflection properties with 0.6 μm spatial resolution, we show that metal nanoparticles attached to the biosensor surface with strong absorption at the resonant wavelength induce a highly localized reduction in reflection efficiency and are able to be detected by modulation of the resonant wavelength. Experimental demonstrations of single-nanoparticle imaging are supported by finite-difference time-domain computer simulations. The ability to image surface-adsorption of individual nanoparticles offers a route to single molecule biosensing, in which the particles can be functionalized with specific recognition molecules and utilized as tags.

  20. Q-switching with single crystal photo-elastic modulators

    Science.gov (United States)

    Bammer, F.; Petkovsek, R.

    2011-02-01

    An overview is given about experiments with a new method for Q-switching lasers at a constant pulse repetition frequency. It uses inside the laser resonator a Single Crystal Photo-Elastic Modulator (SCPEM). This consists of one piezo-electric crystal electrically excited on a mechanical resonance frequency. In resonance mechanical stresses are induced that lead via the photo-elastic effect to a strongly modulated birefringence. Polarized light going through such an oscillating crystal will experience a significant modulation of its polarization and of transmission through a polarizer. Suitable materials should not be optically active, as it is for example the case for SiO2, and should allow the excitation of a longitudinal oscillation with an electric field perpendicular to the travelling direction of the light. Crystals of the group 3m, like LiTaO3 and LiNbO3, proved to be ideally suited for SCPEMS for the NIR- and VIS-region. For the infrared GaAs can be used. We demonstrated SCPEM-Q-switching for a Nd:YAG-fiber, a Nd:YVO4-slab- and a Nd:YAG-rod-laser with typical pulse repetition rates of 100-200kHz, pulse enhancement factors of 100 and pulse durations {1/100 of the period time. Typically the average power during pulsed operation is nearly the same as the cw-power, when the modulator is switched off. The most stable results were achieved up to now with the Nd:YVO4-slab-laser at 10W average power, 1.1 kW peak power, 127 kHz pulse repetition rate, and 70ns pulse durations.

  1. Growth and properties of Lithium Salicylate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  2. The crystal structure and twinning of neodymium gallium perovskite single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ubizskii, S.B.; Vasylechko, L.O.; Savytskii, D.I.; Matkovskii, A.O.; Syvorotka, I.M. [Res. Production Amalgamation Carat, L' viv (Ukraine)

    1994-10-01

    By means of X-ray structure analysis, the crystal structure of neodymium gallium perovskite (NGP) single crystals (NdGaO{sub 3}) being used as a substrate for HTSC film epitaxy has been refined and the position of atoms has been determined. The possibility of YBa{sub 2}Cu{sub 3}O{sub 7-x} film epitaxy on the plane (110) of NGP crystal as well as its advantages and pitfalls are analysed from structural data. The twinning types in the NGP crystal were established. The twinning structure of NGP substrates is found to be stable up to a temperature of 1173 K, as differentiated from the LaGaO{sub 3} and LaAlO{sub 3} substrates. It is intimated that the twinning in the NGP substrates oriented as (001) can result in creation of 90 degrees twin bonds in a film, and in the case of (110)-oriented plates it is possible to ignore the twinning presence in substrate completely. (author)

  3. Aging and memory effect in magnetoelectric gallium ferrite single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Vijay; Mukherjee, Somdutta [Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Mitra, Chiranjib [Department of Physics, Indian Institute of Science Education and Research, Kolkata 741252 (India); Garg, Ashish [Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Gupta, Rajeev, E-mail: guptaraj@iitk.ac.in [Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016 (India)

    2015-02-01

    Here, we present a time and temperature dependent magnetization study to understand the spin dynamics in flux grown single crystals of gallium ferrite (GaFeO{sub 3}), a known magnetoelectric, ferroelectric and ferrimagnet. Results of the magnetic measurements conducted in the field-cooled (FC) and zero-field-cooled (ZFC) protocols in the heating and cooling cycles were reminiscent of a “memory” effect. Subsequent time dependent magnetic relaxation measurements carried out in ZFC mode at 30 K with an intermittent cooling to 20 K in the presence of a small field show that the magnetization in the final wait period tends to follow its initial state which was present before the cooling break taken at 20 K. These observations provide an unambiguous evidence of single crystal gallium ferrite having a spin glass like phase. - Highlights: • Gallium ferrite a room temperature magnetoelectric and ferrimagnetic material. • Spin‐glass like phase at low temperatures below ∼200 K. • Observation of memory and aging effects in GFO.

  4. Large single-crystal diamond substrates for ionizing radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Girolami, Marco; Bellucci, Alessandro; Calvani, Paolo; Trucchi, Daniele M. [Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), Sede Secondaria di Montelibretti, Monterotondo Stazione, Roma (Italy)

    2016-10-15

    The need for large active volume detectors for ionizing radiations and particles, with both large area and thickness, is becoming more and more compelling in a wide range of applications, spanning from X-ray dosimetry to neutron spectroscopy. Recently, 8.0 x 8.0 mm{sup 2} wide and 1.2 mm thick single-crystal diamond plates have been put on the market, representing a first step to the fabrication of large area monolithic diamond detectors with optimized charge transport properties, obtainable up to now only with smaller samples. The more-than-double thickness, if compared to standard plates (typically 500 μm thick), demonstrated to be effective in improving the detector response to highly penetrating ionizing radiations, such as γ-rays. Here we report on the first measurements performed on large active volume single-crystal diamond plates, both in the dark and under irradiation with optical wavelengths (190-1100 nm), X-rays, and radioactive γ-emitting sources ({sup 57}Co and {sup 22}Na). (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Ultrafast dynamic response of single crystal β-HMX

    Science.gov (United States)

    Zaug, Joseph M.; Armstrong, Michael R.; Crowhurst, Jonathan C.; Radousky, Harry B.; Ferranti, Louis; Swan, Raymond; Gross, Rick; Teslich, Nick E.; Wall, Mark A.; Austin, Ryan A.; Fried, Laurence E.

    2017-01-01

    We report results from ultrafast compression experiments conducted on β-HMX single crystals. Results consist of nominally 12 picosecond time-resolved wave profile data, (ultrafast time domain interferometry -TDI measurements), that were analyzed to determine high-velocity wave speeds as a function of piston velocity. TDI results are used to validate calculations of anisotropic stress-strain behavior of shocked loaded energetic materials. Our previous results derived using a 350 ps duration compression drive revealed anisotropic elastic wave response in single crystal β-HMX from (110) and (010) impact planes. Here we present results using a 1.05 ns duration compression drive with a 950 ps interferometry window to extend knowledge of the anisotropic dynamic response of β-HMX within eight microns of the initial impact plane. We observe two distinct wave profiles from (010) and three wave profiles from (010) impact planes. The (110) impact plane wave speeds typically exceed (010) impact plane wave speeds at the same piston velocities. The development of multiple hydrodynamic wave profiles begins at 20 GPa for the (110) impact plane and 28 GPa for the (10) impact plane. We compare our ultrafast TDI results with previous gun and plate impact results on β-HMX and PBX9501.

  6. Stress topology within silicon single-crystal cantilever beam

    Directory of Open Access Journals (Sweden)

    Alexander P. Kuzmenko

    2015-06-01

    Full Text Available Flexural elastic deformations of single-crystal silicon have been studied using microspectral Raman scattering. Results are reported on nano-scaled sign-changing shifts of the main peak of the microspectral Raman scattering within the single-crystal silicon cantilever beam during exposure to flexural stress. The maximum value of Raman shift characteristic of the 518 cm−1 silicon peak at which elasticity still remains has been found to be 8 cm−1 which corresponds to an applied deformation of 4 GPa. We report three-dimensional maps of the distribution of internal stresses at different levels of deformation up to irreversible changes and brittle fracture of the samples that clearly show compression and tension areas and an undeformed area. A qualitative explanation of the increase in the strength of the cantilever beam due to its small thickness (2 μm has been provided that agrees with the predictions of real-world physical parameters obtained in SolidWorks software environment with the SimulationXpress module. We have defined the relative strain of the beam surface which was 2% and received a confirmation of changes in the silicon lattice parameter from 0.54307 nm to 0.53195 nm by the BFGS algorithm.

  7. The refractive index of zinc oxide microwire single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Czekalla, Christian; Kuehne, Philipp; Sturm, Chris; Schmidt-Grund, Ruediger; Grundmann, Marius [Universitaet Leipzig (Germany). Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II

    2010-07-01

    Among a large number of applications, zinc oxide (ZnO) single crystals (bulk and micro- and nanowires) are expected to form important building blocks for future optoelectronic devices like light emitting and laser diodes. Optical resonances from ZnO structures have been observed by a number of groups in the past years. In most of the publications, modeling of the mode structure, especially in the near bandgap spectral region, is difficult because the energy dependent refractive index n(E) is typically not known. Additionally, in case of the self assembled micro- and nanowires, the structures are too small to perform spectroscopic ellipsometry to determine n(E). We compare n(E) obtained from (a) spectroscopic ellipsometry measurements of ZnO bulk single crystals and (b) spatially resolved photoluminescence measurements of ZnO microwires employing a plane wave whispering gallery mode model for the observed resonances. We discuss the differences between the results obtained from the two methods and their mutual impact, leading to a highly precise determination of n(E) in an energy range between 1.80 eV and 3.25 eV and for temperatures between 10 K and 295 K.

  8. Single Crystal Diamond Needle as Point Electron Source

    Science.gov (United States)

    Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

    2016-10-01

    Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

  9. Experimental and theoretical investigations of the gain dependence at two-wave interaction on the thickness and orientation angle of the Bi12GeO20 crystal

    Science.gov (United States)

    Shepelevich, V. V.; Makarevich, A. V.; Shandarov, S. M.

    2017-06-01

    Experimental studies of the dependence of object wave gain at two-wave interaction on the effective thickness of cubic photorefractive optically active crystal Bi12GeO20 were performed using only one (\\bar 1\\bar 10) -cut crystal sample. It is shown that the obtained experimental results can be satisfactorily theoretically interpreted taking into account the inverse piezoelectric and the photo-elastic effects in addition to the traditionally considered electro-optical one.

  10. Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography

    Institute of Scientific and Technical Information of China (English)

    Ma Tongda; Tu Hailing; Hu Guangyong; Wang Jing

    2004-01-01

    The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.

  11. CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector

    KAUST Repository

    Maculan, Giacomo

    2015-09-02

    Single crystals of hybrid perovskites have shown remarkably improved physical properties compared to their polycrystalline film counterparts, underscoring their importance in the further development of advanced semiconductor devices. Here we present a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal CH3NH3PbCl3. The chloride-based perovskite crystals exhibit trap-state density, charge carriers concentration, mobility and diffusion length comparable with the best quality crystals of methylammonium lead iodide or bromide perovskites reported so far. The high quality of the crystal along with its suitable optical bandgap enabled us to design and build an efficient visible-blind UV-photodetector, demonstrating the potential of this material to be employed in optoelectronic applications.

  12. Size effects on void growth in single crystals with distributed voids

    DEFF Research Database (Denmark)

    Borg, Ulrik; Niordson, Christian Frithiof; Kysar, J.W.

    2008-01-01

    The effect of void size on void growth in single crystals with uniformly distributed cylindrical voids is studied numerically using a finite deformation strain gradient crystal plasticity theory with an intrinsic length parameter. A plane strain cell model is analyzed for a single crystal...

  13. Vertical gradient solution growth of N-type Si0.73Ge0.27 bulk crystals with homogeneous composition and its thermoelectric properties

    Science.gov (United States)

    Omprakash, M.; Arivanandhan, M.; Sabarinathan, M.; Koyama, T.; Momose, Y.; Ikeda, H.; Tatsuoka, H.; Aswal, D. K.; Bhattacharya, S.; Inatomi, Y.; Hayakawa, Y.

    2016-05-01

    Compositionally homogeneous Sb-doped (5×1018 and 1×1019 cm-3) Si0.73Ge0.27 bulk crystals were grown by a vertical gradient solution growth method. The sandwich sample Si (seed)/Sb-doped Ge/ Si(feed) was set up inside a furnace under a mild temperature gradient 0.57 °C/mm for homogeneous growth. The Si composition was analyzed by electron probe micro- analysis (EPMA). It revealed that the Si composition was homogeneous and the lengths of the Sb-doped (5×1018 and 1×1019 cm-3) Si0.73Ge0.27 bulk crystals were 18.3 and 15.1 mm, respectively. Grain distribution was investigated by electron backscattered diffraction spectrum (EBSD). The Seebeck coefficients (-440 and -426 μV/K) of Sb-doped (5×1018 and 1×1019 cm-3) Si0.73Ge0.27 were higher than the reported value (-211 μV/K) of P-doped (5×1019 cm-3) Si0.8Ge0.2 at room temperature. Thermal conductivity of Ga and Sb-doped SiGe was decreased with temperature due to scattering of phonon at the temperature range between 313 and 913 K. The maximum ZT values of Ga and Sb-doped SiGe were 0.34 and 0.44 at 820 K, respectively. The ZT values of Ga and Sb-doped SiGe were higher (0.07 and 0.13) than the reported value of Ga-doped Si0.81Ge0.19 (0.05) and P-doped (5×1019 cm-3) Si0.8Ge0.2 bulk crystals at room temperature. The improvement in ZT value was caused by a decrease of thermal conductivity which related to a composition of the alloy and doping concentration in the crystal.

  14. Laser-induced glass-crystallization phenomena of GeSe2 investigated by light scattering

    Science.gov (United States)

    Haro, E.; Xu, Z. S.; Morhange, J.-F.; Balkanski, M.; Espinosa, G. P.; Phillips, J. C.

    1985-07-01

    Recrystallization of glassy GeSe2 under laser irradiation has been studied with use of Raman spectroscopy. A threshold irradiation power level below which no changes in the local molecular structure of the system can be detected has been defined. For an irradiation power above the threshold, three stages of transformation have been identified: The first stage is characterized by the nucleation of clusters or submicrocrystallites which remain embedded in a continuum glass matrix. The second stage is characterized by the coexistence of clusters of various sizes. Up to this stage, the system is fully reversible. The last stage is reached when the crystallites coalesce to form a polycrystalline material.

  15. Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Minari, S.; Cavigli, L.; Sarti, F.; Abbarchi, M.; Accanto, N.; Munoz Matutano, G.; Vinattieri, A.; Gurioli, M. [Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy); Bietti, S.; Sanguinetti, S. [Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)

    2012-10-22

    We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

  16. Crystal Growth and Properties of Co2+ doped Y3Sc2Ga3O12 Single Crystal

    Institute of Scientific and Technical Information of China (English)

    Guo Shiyi; Yuan Duorong; Shi Xuzhong; Cheng Xiufeng; Zhang Xiqing; Yu Fapeng

    2007-01-01

    Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to φ20×40mm3 and undoped YSGG crystal with the dimensions up to φ28×60mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.

  17. Growth and Characterization of Pure and Doped L-Alanine Tartrate Single Crystals

    Directory of Open Access Journals (Sweden)

    K. Rajesh

    2013-01-01

    Full Text Available Single crystals of pure and Lanthanum doped L-Alanine Tartrate were grown by slow evaporation method. The cell parameters were determined using single crystal X-ray diffraction method. To improve the physical properties of the LAT crystal, Lanthanum dopant was added by 2 mol%. ICP studies confirm the presence of Lanthanum in the grown LAT crystal. Transparency range of the crystal was determined using UV-VIS-NIR spectrophotometer. The functional groups of pure and doped LAT crystals were analyzed by FT-IR spectroscopy. Using Vickers microhardness tester, mechanical strength of the material was found. Dielectric studies of pure and doped LAT single crystals were carried out. The doped LAT crystal is found to have efficiency higher than that of pure LAT crystal.

  18. Silicon doping effect on the crystallization behavior of Ge{sub 2}Sb{sub 2}Te{sub 5} film

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yifan; Xu, Ling; Chen, Jing; Zhang, Rui; Su, Weining; Yu, Yao; Ma, Zhongyuan; Xu, Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University (China)

    2013-10-15

    Pure Ge{sub 2}Sb{sub 2}Te{sub 5} thin films and Si-doped Ge{sub 2}Sb{sub 2}Te{sub 5} thin films were deposited by electron beam evaporation method. The property of Si-doped Ge{sub 2}Sb{sub 2}Te{sub 5} films are compared with that of pure Ge{sub 2}Sb{sub 2}Te{sub 5} films. Through in situ resistance measurement and I-V characteristic tests, an improvement of amorphous stability and an increase of crystalline resistivity are observed. The phase-separation phenomenon is observed in TEM pictures and a distinct decrease of crystal grain size in Si-doped Ge{sub 2}Sb{sub 2}Te{sub 5} thin film can be seen in HRTEM pictures. A blueshift and broadening of peaks after Si doping in Raman spectra are found and from absorption spectra, the broadening of crystalline optical bandgap in Si-doped Ge{sub 2}Sb{sub 2}Te{sub 5} thin film is proved. Finally, the behavior of doped Si atoms is proposed to explain the effect of Si doping in Ge{sub 2}Sb{sub 2}Te{sub 5} thin film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. A preliminary review of organic materials single crystal growth by the Czochralski technique

    Science.gov (United States)

    Penn, B. G.; Shields, A. W.; Frazier, D. O.

    1988-01-01

    The growth of single crystals of organic compounds by the Czochralski method is reviewed. From the literature it is found that single crystals of benzil, a nonlinear optical material with a d sub 11 value of 11.2 + or - 1.5 x d sub 11 value of alpha quartz, has fewer dislocations than generally contained in Bridgman crystals. More perfect crystals were grown by repeated Czochralski growth. This consists of etching away the defect-containing portion of a Czochralski grown crystal and using it as a seed for further growth. Other compounds used to grow single crystals are benzophenone, 12-tricosanone (laurone), and salol. The physical properties, growth apparatus, and processing conditions presented in the literature are discussed. Moreover, some of the possible advantages of growing single crystals of organic compounds in microgravity to obtain more perfect crystals than on Earth are reviewed.

  20. Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

    Directory of Open Access Journals (Sweden)

    Callum G. Littlejohns

    2016-01-01

    Full Text Available The realisation of high quality silicon-germanium-on-insulator (SGOI is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.